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WO2025005889A1 - Électrodes pour dispositifs à pérovskite d'halogénure - Google Patents

Électrodes pour dispositifs à pérovskite d'halogénure Download PDF

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Publication number
WO2025005889A1
WO2025005889A1 PCT/SG2024/050430 SG2024050430W WO2025005889A1 WO 2025005889 A1 WO2025005889 A1 WO 2025005889A1 SG 2024050430 W SG2024050430 W SG 2024050430W WO 2025005889 A1 WO2025005889 A1 WO 2025005889A1
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WIPO (PCT)
Prior art keywords
electrode
electrically conductive
conductive paste
shell
selective contact
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PCT/SG2024/050430
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English (en)
Inventor
Nitin NAMPALLI
Jeremie WERNER
Shubham DUTTAGUPTA
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National University of Singapore
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National University of Singapore
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Publication of WO2025005889A1 publication Critical patent/WO2025005889A1/fr
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0218—Composite particles, i.e. first metal coated with second metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0275—Fibers and reinforcement materials
    • H05K2201/0281—Conductive fibers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0323—Carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3

Definitions

  • the present disclosure relates, in general terms, to electrodes for halide-perovskite devices.
  • the present disclosure relates to methods and materials for state-of-the-art electrodes with low contact resistance typically employed in solar cells and light-emitting diodes.
  • Electrodes methods and materials typically employed in solar cells, light-emitting diodes (LEDs) and perovskite-based device manufacturing have several drawbacks which limit the performance and/or temporal stability when applied to perovskite-based devices such as perovskite-based solar cells and perovskite-based LEDs.
  • Such electrodes employ materials that cause irreversible degradation when applied on perovskite semiconductors due to thermally activated reactions or redox reactions originating from the materials or methods used.
  • Such electrodes also have high ohmic resistance and are hence nor suitable for large-area solar cells or LED devices operating under high currents.
  • these electrodes have high contact resistance to the perovskite semiconductor and lead to low power generation characteristics in solar cells and/or high power loss in other perovskitebased devices.
  • Such electrodes may also employ materials which have high cost and are therefore too expensive for high-volume manufacturing.
  • several incumbent electrode designs, methods and materials are not suitable for high-volume manufacturing of large-area perovskite-based solar cells and other perovskite-based electronic devices such as perovskite LEDs. It is hence an object of the present invention to provide electrode materials, electrode formation methods, electrode designs and device designs which are suitable for large-scale manufacturing of perovskite-based devices.
  • an electrode formed from an electrically conductive paste has low contact resistance (a possible range of low contact resistance would be 0.1-3 Q-cm 2 ) to perovskite semiconductors when used in high-current devices such as large-area perovskite-based solar cells, including single-junction halide-perovskite solar cells, tandem solar cells including a halide-perovskite top cell and perovskite LEDs.
  • the materials used in the electrically conductive paste are also chosen from low-cost metals. This ensures commercial viability for paste manufacturing as well as low cost-of-ownership for perovskite-based device fabrication using such pastes.
  • an electrically conductive paste for use as part of an electrode in a semiconductor device, the paste comprising conductive particles dispersed in a binding material and solvent, the conductive particles comprising an outer surface of at least one of Mo, W, Cr, Pd, Zn, Ce, Cu, Cd, Nb, V, Ti, Mn, Ta, Sn, Nd, La, Bi, C.
  • the outer surface one or more of the conductive particles may be the outer surface of a single component particle.
  • one or more of the conductive particles is a core shell particle, the outer surface being a first shell the respective core shell particle, and the core-shell particles then comprising a metallic core comprising at least one of: Ag, Cu, Al, Mo, Zn, C, Co, W, Ni, Li, Fe, Sn, Ta, Cr, Sr, Nb, V, Pb, Ga, Zr, Mg, Ti, Mn, C, Te, Ge, with the first shell comprising formed around the metallic core.
  • formed around may include directly formed on (in the case of conductive particles comprising a single shell around a solid core) or formed around one or more other layers around the core.
  • the conductive paste may comprise a combination of particles of different types - e.g. single-component, core shell with one shell, core shell with two or more layers and so on.
  • an electrically conductive paste for use as part of an electrode in a solar cell, the paste comprising conductive particles dispersed in a binding material and solvent; the conductive particles comprising at least one of: Mo, W, Cr, Pd, Zn, Ce, Cu, Cd, Nb, V, Ti, Mn, Ta, Sn, Nd, La, Bi, C.
  • Also disclosed is a method for fabrication of an electrode for a semiconductor device comprising: depositing the electrically conductive paste as described above on an outer layer of a carrier-selective contact of a halide-perovskite based semiconductor device; and heat-curing the deposited electrically conductive paste and the layer of a carrier-selective contact at a temperature in the range of 85 °C to 150 °C.
  • an electrode for use in a semiconductor device comprising the electrically conductive paste as described above, provided on a carrier-selective contact of a halide-perovskite based semiconductor device.
  • a solar cell comprising: a halide-perovskite semiconductor layer; the electrode as described above provided on the halide-perovskite semiconductor layer.
  • a light-emitting device comprising: a halide-perovskite semiconductor layer; an electrode described above, provided on the halide-perovskite semiconductor layer.
  • Figure 1 comprising images la to lc, shows cross-sectional schematics of particles used in an electrically conductive paste, according to embodiments of the present invention.
  • Figure 2 comprising images 2a to 2c, illustrates electrically conductive pastes according to embodiments of the present invention.
  • Figure 3 illustrates a method for fabrication of an electrode for a semiconductor device.
  • Figure 4 comprising images 4a and 4b, illustrates the schematics of an electrode, showing the outermost layer of an electron selective contact (ESC - image 4a) and of a hole-selective contact (HSC - image 4b), for use in a semiconductor device such as a halide-perovskite based semiconductor device, wherein the electrode comprises both the electrically conductive paste and a carrier-selective contact.
  • ESC - image 4a an electron selective contact
  • HSC - image 4b hole-selective contact
  • Figure 5 comprising images 5a to 5d, illustrates examples of perovskite-based solar cells, each comprising the electrically conductive paste in accordance with embodiments of the invention.
  • Figure 6 illustrates examples of perovskite-based light-emitting diodes, each comprising the electrically conductive paste in accordance with embodiments of the invention.
  • Embodiments of the present disclosure relate to methods and materials for state-of- the-art electrodes with low contact resistance typically employed in solar cells and light-emitting diodes.
  • images la to 1c schematically represents particles that can be incorporated into an electrically conductive paste for use as part of an electrode in a semiconductor device.
  • the conductive particles may be single-component particles made of a conductive barrier material, as shown in Figure 1, image la (102).
  • the barrier materials used in particles of Figure 1 are materials with high energy barrier for diffusion low-diffusivity within halide-perovskite semiconductors (greater than 0.5 eV), and low bulk resistivity (less than 100 p -cm).
  • the core being the sole component of the single-component embodiment in Figure 1, image la, may be formed from one of: Mo, W, Cr, Pd, Zn, Ce, Cu, Cd, Nb, V, Ti, Mn, Ta, Sn, Nd, La, Bi, C, or a combination of those materials.
  • the core comprises a barrier material.
  • the conductive particles may also be core-shell particles, as shown in Figure 1, image lb, comprising a core (104) and a shell (106).
  • the conductive particles may also comprise, as shown in Figure 1, image lc, a core (108), an inner (first) shell (110) and an outer (second) shell (112).
  • additional layers are formed.
  • the particle may comprise a single-component, per Figure 1, image la, or a core surrounded by any desired number of layers of material.
  • a barrier material such as those mentioned above, may form the outer layer of the embodiments shown in Figure 1, images lb and lc.
  • the core 104 comprises a metal, with the conductive barrier material 106 formed on the core in a manner that will be evident to the skilled person in view of the present teachings.
  • the core presently being a metallic core, comprises at least one of: Ag, Cu, Al, Mo, Zn, C, Co, W, Ni, Li, Fe, Sn, Ta, Cr, Sr, Nb, V, Pb, Ga, Zr, Mg, Ti, Mn, C, Te, Ge.
  • image lc the core is surrounded by two shells, an inner shell and an outer shell.
  • the inner shell is formed from a galvanic protection material - i.e., a material such as Zinc that prevents or inhibits rusting.
  • the galvanic material may be at least one of: Mo, W, Cr, Pd, Zn, Ce, Cu, Cd, Nb, V, Ti, Mn, Ta, Sn, Nd, La, Bi, C.
  • the weight proportion of the metallic core to the inner shell may be in the range of about 5:95 to about 90: 10. The weight proportion may depend on the particle materials selected, and on the application.
  • the first shell may have a weight percentage of about 5% to about 85% of the weight of each particle.
  • the second shell in particles such as that shown in Figure 1, image lc, and particles with more than two layers over the core may have a weight percentage of about 5% to about 85% of the weight of the particle.
  • Single-component particles are expected to be cheaper to manufacture at scale but may be limited in electrical performance by the bulk resistivity of the material used in the particles. Further, in practical applications, oxidation of the particles (whether single-component or core-shell) is a possibility. Hence, the material choice for singlecomponent particles may be limited to materials which that are less easily oxidized or materials whose oxides have a bulk resistivity such that the increase in the overall bulk resistivity of the particles is still within an acceptable range.
  • core-shell particles are expected to be more expensive to manufacture but offer fewer trade-offs in performance as the core material and shell materials can be appropriately chosen to achieve a lower overall particle bulk resistivity and improved performance under oxidizing conditions.
  • the conductive particles are characterised by a diffusion energy barrier of more than about 0.6 eV.
  • the metal oxide resistivity of the conductive particles may be less than 1 x 10 s Q-cm.
  • the pure metal resistivity may be less than about 6 x 10' 4 -cm.
  • the conductive particles may be further characterised by a Gibbs Energy for Iodide Formation of less than -140 kJ/mol. Some of these properties are inherent in the materials, but other ones of these properties may be either inherent or imparted - e.g., by surface functionalisation. For example bulk resistivities are likely material-limited, but oxide resistivities and energy of formation may be somewhat improved by applying surface treatment or other methods onto the particles.
  • Figures 2a to 2c illustrate an electrically conductive paste comprising paste particles (204, 208) shown in Figure 1, dispersed in a binder 202.
  • the particles 204, 208 have the same structure - e.g., single-component, or core-shell.
  • the particles 204, 208 have mixed structure - e.g., singlecomponent and core-shell, or core-shell particles of different numbers of layers, or particles formed from different materials.
  • the paste comprises conductive particles dispersed in a binder material (202) and optionally, a solvent. The solvent is evaporated during curing of the paste, leaving the particles bound by the binder to form a layer of the electrode.
  • the binder material may be an organic binder material.
  • the organic binder material may be one of but is not limited to: PVDF, ethyl cellulose, epoxy resins, urethanes, silicones, acrylics, etc.
  • the solvent material if present, may be one of but is not limited to: N-methyl-2-pyrrolidone (NMP), acetone, benzyl alcohols, etc.
  • the electrically conductive paste as shown in Figures 2a to 2c comprises conductive fibres (206).
  • the conductive fibres lower the line resistance, reducing the effect of grain boundaries on resistivity.
  • the conductive fibres may be one or more than one of: graphene, carbon nanotubes, carbon fibres, graphite, or Cu nanotubes.
  • Figure 3 outlines a method for fabrication (300) of an electrode for a semiconductor device, the electrode comprising the electrically conductive paste according to an embodiment illustrated in any one of Figures 2a to 2c.
  • the electrically conductive paste is provided on a carrier-selective contact of a halide-perovskite based semiconductor device.
  • the electrically conductive paste is first deposited on an outer layer of a carrier-selective contact of a halide-perovskite based semiconductor device by means of a screen-printing process (310).
  • a screen (302) transfers the electrically conductive paste onto the outer layer of the carrier-selective contact (304) of the device.
  • the paste is deposited onto the screen (306).
  • the paste may pass through the screen either under gravity or deposition force - e.g. through pores, slits or apertures in the screen.
  • a scraper, squeegee or similar (308) is used to push the paste through the screen by relative movement between the screen and squeegee.
  • areas of the screen are made impermeable to the paste. This gives rise to a patterned (uncured) metal paste which is coated on an outer layer of the carrier-selective contact of the device.
  • the permeable sections are the areas where the paste is effectively 'applied' onto the device (positive space).
  • the electrodes thus printed / applied (via permeable sections of the screen) form either the positive or negative or both electrodes of the photovoltaic (PV) or LED device.
  • the patterned metal paste is heat-cured (320) by any appropriate heat-curing process.
  • Heat-curing occurs in a controlled environment.
  • the controlled environment has a temperature in the range of 80-150 °C.
  • the environment may be ambient (i.e. in air), in N2 or in Ar.
  • the heat-curing process forms a part of an inline process for fabrication of the semiconductor device.
  • the patterning of the electrode via the screen-printing process covers a surface area in the range of about 1% to about 50% of the surface area of the carrier-selective contact.
  • Figure 4 illustrates a schematic of an electrode for use in a semiconductor device, such as a halide-perovskite based semiconductor device.
  • the electrode comprises both the electrically conductive paste and a carrier-selective contact.
  • the paste is deposited, using the process outlined in Figure 3, onto the outermost layer of the carrier selective contact.
  • the outermost layer comprises a transparent conductive oxide, thin metal, or transparent conducting polymers onto which the paste is deposited.
  • the paste is deposited on an opposite side of the carrier-selective contact to the rest of the semiconductor device.
  • the barrier materials used in the paste are also selected to provide low diffusivity and low resistivity, when the electrode is used in a semiconductor device.
  • the carrier-selective contact may be an electron-selective contact, or it may be a hole-selective contact, depending on whether a p-i-n device or an n-i-p device is desired.
  • Figure 4a shows the schematics for an electrode wherein the carrier-selective contact is an electron-selective contact, in both a top electrode and a bottom electrode configuration.
  • the electron-selective contact (404, 406) may comprise any one of a transparent conductive oxide or an inorganic metal contact.
  • the transparent conductive oxide may be one of, but not limited to: InOx, ZnOx, TiOx or SnOx.
  • the transparent conductive oxide may be doped, or it may be undoped.
  • the inorganic metal contact may be one of, but not limited to any one of: SnOx, TiOx, WOx, NbOx, CdS, BiSx, MoS2, SnS2, InSx, ZnSO4, BaSnOx, SrSnOx, ZrSnOx, ZnTiOx, SrTiOx, InGaZnOx, GaN.
  • the electron-selective contact may also be graphenes, fullerenes or their derivates, including but not limited to phenyl-C61-butyric acid methyl ester (PCBM), bathocuproine (BCP) or carbon-60 (C60).
  • the electron-selective contact may be self-assembled monolayers (SAMs).
  • Figure 4b shows the schematics for an electrode wherein the carrier-selective contact is a hole-selective contact (424, 426), in both a top electrode and a bottom electrode configuration.
  • the hole-selective contact may comprise a transparent conductive oxide or an inorganic metal compound.
  • the transparent conductive oxide may be one of, but not limited to: InOx, ZnOx, TiOx or SnOx.
  • the transparent conductive oxide may be doped, or it may be undoped.
  • the inorganic metal compound may be one of, but not limited to: NiOx, WOx, MoOx, CuOx, CuSCN, Cui, M0S2, WS2, CuS, CuCrO2.
  • the hole-selective contact may also be organic compounds, graphenes, fullerenes or their derivates, including but not limited to phenyl-C61-butyric acid methyl ester (PCBM), bathocuproine (BCP) or carbon-60 (C60).
  • PCBM phenyl-C61-butyric acid methyl ester
  • BCP bathocuproine
  • C60 carbon-60
  • Organic compounds may include doped and undoped PCBM, poly(3-hexylthiophene) (P3HT), poly[bis(4- phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,7-bis(4- methoxyphenyl)amino)spiro[cyclopenta[2,l-b:3,4-b]dithiophene-4,9-fluorene) (FDT), MeO-2Pac, PEDOT:PSS, 2,2 ' ,7,7 ' - tetrakis - (N,N - di - 4 - methoxyphenylamino)- 9,9 ' - spirobifluorene (spiro-OMe-TAD).
  • the hole-selective contact may be self-assembled monolayers.
  • Electrodes as disclosed herein typically have a volume resistivity of less than or equal to 10‘ 3 Q-cm. In some embodiments, the volume resistivity was found to be 5xl0‘ 5 Q-cm. Thus, volume resistivity between 5xl0 -5 -cm and IO -3 -cm is expected.
  • the electrode typically has a contact resistivity at the interface between the electrode and the outermost carrier-selective contact layer of less than or equal to 0.5 Q-cm 2 . In some embodiments, the contact resistivity was found to be about 0.1-3 Ohm-cm 2 .
  • the electrically conductive paste (402, 422) is deposited in a pattern of lines over the carrier-selective contact.
  • Each line of the electrically conductive paste within the pattern of lines over the carrier-selective contact may have a width of more than about 10 pm and a height of more than about 1 pm.
  • Each line of the electrically conductive paste within the pattern of lines may also have a line resistance of no more than about 5 Q/cm.
  • Electrodes comprising the electrically conductive paste may be used in a number of semiconductor devices, including perovskite solar cells and perovskite light-emitting diodes (LEDs).
  • semiconductor devices including perovskite solar cells and perovskite light-emitting diodes (LEDs).
  • FIG. 5 illustrates four example embodiments of perovskite-based solar cells, each comprising the electrically conductive paste (502) as disclosed in the claimed invention.
  • the solar cells may be tandem solar cells, i.e. they may comprise two or more than two p-n junctions, each of which is formed from a semiconductor of different band gap energy, responding to a different section of the solar spectrum, and hence allowing for a higher overall efficiency.
  • the solar cells may be singlejunction perovskite solar cells, comprising a single layer of semiconductor material. While most conventional solar cells rely on a single junction, tandem solar cells have potential to achieve higher efficiencies in comparison.
  • a halide-perovskite semiconductor layer (508) is used as the active material in the device.
  • the halide-perovskite semiconductor layer may comprise an O-PX3 composition.
  • P may be a cationic species, and P may be one of: Pb, Sn, Ge, Co, Fe, Mn, Cu or Ni.
  • X may be an anionic species, and X may be selected from a group of halides (T, Cl, Br) or SCN' or BF4'.
  • Figures 5a and 5b each illustrate a perovskite-silicon tandem solar cell, in a p-i-n junction and a n-i-p junction, respectively.
  • the perovskite-silicon tandem solar cell consists of a silicon bottom cell (522, 524) above which there is an interconnection contact and above which there is a halide-perovskite top cell.
  • the silicon bottom cell may be fabricated in a variety of known methods.
  • Tandem devices in a p-i-n configuration must have a hole-selective contact (516) on the rear-side of the bottom cell and an electron-selective contact (504, 506) on the front -side of the bottom cell, whereas those in an n-i-p configuration must have an electron-selective contact (518) on the rear-side of the bottom cell and a hole-selective contact (510, 512) on the front-side of the bottom cell.
  • the bottom cell must have a suitably patterned conductive electrode (502) deposited on the rear side of the bottom cell and no conductive electrode on the front-side.
  • a silicon bottom cell may be fabricated by starting with a silicon wafer, which undergoes a suitable series of wet chemical processes to achieve a textured or roughened or planar surface on one or both sides of the wafer. This is followed by a suitable wet chemical cleaning step. This is followed by deposition of a thin passivating layer (e.g. intrinsic amorphous silicon) on one side of the wafer after which a doped layer (e.g. doped amorphous silicon), which can be either of n-type doping or p-type doping, is deposited on the same side.
  • a thin passivating layer e.g. intrinsic amorphous silicon
  • a doped layer e.g. doped amorphous silicon
  • the n-type doped layer forms the rear side of the bottom cell (i.e. nonilluminated side) and the p-type doped layer forms the front-side of the bottom cell (i.e. illuminated side).
  • the p-type doped layer forms the rear side of the bottom cell (i.e. non-illuminated side) and the n-type doped layer forms the front-side of the bottom cell (i.e. illuminated side).
  • a transparent conductive film may be deposited on one side of the wafer, followed by another TCF deposited on the other side of the wafer.
  • TCF transparent conductive film
  • One or both of these TCF films may be patterned to avoid direct contact between TCF on one side with TCF on another side at or near the edges of the wafer.
  • the TCF films on one or both sides may also be replaced with other suitable films.
  • the rear side (and only the rear side) of the wafer receives deposition of a conductive paste followed by curing. This concludes the formation of the silicon bottom cell structure. Other methods may be applied subsequently that do not fundamentally change the structure of the silicon bottom cell.
  • sequence and methods by which the various layers prior to the conductive paste deposition are formed may vary and may additionally involve patterning, wet chemistry, diffusion or other such methods generally known to form a high-performance silicon solar cell. All subsequent depositions described are then performed in order on the front-side of the bottom cell. The silicon bottom cell so described receives deposition of an unpatterned or patterned interconnection contact.
  • halide-perovskite top cell over the interconnection contact. This is done by deposition of the hole-selective contact in the case of p-i-n device (electron-selective contact in the case of n-i-p device). This is followed by halide-perovskite semiconductor layer deposition. Next, an electron- selective contact is deposited in the case of n-i-p device (hole-selective contact in the case of n-i-p device). This is followed by a transparent conductive film (TCF), which is un-patterned. This is followed by deposition of patterned conductive paste, which is subsequently cured. This concludes the formation of the top cell structure. Other methods may be applied subsequently that do not fundamentally change the structure of the top cell.
  • TCF transparent conductive film
  • the tandem solar cell so formed may then be further processed using techniques well-known in the field to form a solar module.
  • Figures 5c and 5d each illustrate a single-junction perovskite solar cell, in a p-i-n junction and a n-i-p junction, respectively.
  • the electrically conductive paste (502) is optionally coated on the substrate with or without a pattern, followed by curing.
  • a transparent conductive film (TCF) layer may be deposited by sputtering or other techniques followed optionally by a laser scribing step for transparent conductive oxide (TCO) patterning (if TCO is un-patterned at the time of deposition).
  • TCF transparent conductive film
  • the solar cell comprising the halide-perovskite semiconductor layer may further comprise two or more photovoltaic semiconductor absorbers connected in series with each other and provided as layers in the solar cell.
  • the photovoltaic semiconductor absorbers closest to an illuminated side of the solar cell is a halide-perovskite semiconductor.
  • Figure 6 illustrates two example embodiments of perovskite-based light-emitting diodes (LEDs), each comprising the electrically conductive paste as disclosed in the claimed invention and a halide-perovskite semiconductor layer as the light-emitting layer.
  • LEDs perovskite-based light-emitting diodes
  • the halide-perovskite semiconductor layer may comprise an O-PX3 composition.
  • P may be a cationic specie, being one of: Pb, Sn, Ge, Co, Fe, Mn, Cu or Ni.
  • X may be an anionic specie, and X may be from a group of halides (T, Ct, Br) or SCN' or BF4'.
  • Figure 6a shows a perovskite LED in a p-i-n configuration.
  • an un-patterned or patterned paste 602 may optionally be deposited on a substrate (614) and subsequently cured.
  • a hole-selective contact (604, 606) consisting is deposited on the patterned or un-patterned cured paste.
  • a halide-perovskite semiconductor 608 may be deposited or formed on the hole-selective contact, and an electron-selective contact (610, 612) is placed above the halide-perovskite semiconductor.
  • a suitably patterned paste may then be deposited on the electron- selective contact and subsequently cured.
  • the hole-selective contact and electron- selective contact may consist of one or more deposited layers.
  • the halide-perovskite semiconductor may be formed in a variety of methods well-known in the field involving one or more subsequent processes.
  • Figure 6b shows a perovskite LED in a n-i-p configuration.
  • an un-patterned or patterned paste 602 may optionally be deposited on a substrate (614) and subsequently cured.
  • An electron-selective contact (610, 612) consisting is deposited on the patterned or un-patterned cured paste.
  • a halide-perovskite semiconductor 608 may be deposited or formed on the electron-selective contact, and a hole-selective contact (604, 606) is placed above the halide-perovskite semiconductor.
  • a suitably patterned paste may then be deposited on the hole- selective contact and subsequently cured.
  • the electron-selective contact and hole- selective contact may consist of one or more deposited layers.
  • the halide-perovskite semiconductor may be formed in a variety of methods well-known in the field involving one or more subsequent processes.

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une pâte électroconductrice destinée à être utilisée en tant que partie d'une électrode dans un dispositif à semi-conducteur, la pâte comprenant des particules conductrices dispersées dans un matériau de liaison et un solvant. Les particules conductrices sont des particules à un seul composant comprenant uniquement un coeur, ou des particules coeur-enveloppe comprenant un coeur métallique, une première enveloppe, et éventuellement, une seconde enveloppe. L'invention concerne également un procédé de fabrication d'une électrode comprenant la pâte électroconductrice.
PCT/SG2024/050430 2023-06-28 2024-06-28 Électrodes pour dispositifs à pérovskite d'halogénure Pending WO2025005889A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338886A (ja) * 1989-07-06 1991-02-19 Murata Mfg Co Ltd 太陽電池用電極材
WO2002005294A1 (fr) * 2000-07-08 2002-01-17 Johnson Matthey Public Limited Company Encre electriquement conductrice
US20140264191A1 (en) * 2013-03-15 2014-09-18 Inkron Ltd Multi Shell Metal Particles and Uses Thereof
CN109887641A (zh) * 2019-02-18 2019-06-14 邓建明 一种能有效提高与CuInSe2层欧姆接触性能的Mo层

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338886A (ja) * 1989-07-06 1991-02-19 Murata Mfg Co Ltd 太陽電池用電極材
WO2002005294A1 (fr) * 2000-07-08 2002-01-17 Johnson Matthey Public Limited Company Encre electriquement conductrice
US20140264191A1 (en) * 2013-03-15 2014-09-18 Inkron Ltd Multi Shell Metal Particles and Uses Thereof
CN109887641A (zh) * 2019-02-18 2019-06-14 邓建明 一种能有效提高与CuInSe2层欧姆接触性能的Mo层

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Recent Developments in Photovoltaic Materials and Devices", 13 February 2019, ISBN: 978-1-78985-403-9, article SANG HEE LEE AND SOO HONG LEE: "Conductive Copper Paste for Crystalline Silicon Solar Cell", pages: 23 - 41, XP009559881, DOI: 10.5772/INTECHOPEN.78604 *
NGUYEN VAN-CAO, KATSUKI HIROYUKI, SASAKI FUMIO, YANAGI HISAO: "Single-crystal perovskite CH 3 NH 3 PbBr 3 prepared by cast capping method for light-emitting diodes", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 57, no. 4S, 1 April 2018 (2018-04-01), JP , pages 04FL10, XP093255784, ISSN: 0021-4922, DOI: 10.7567/JJAP.57.04FL10 *
WANG LU, LI GUO-RAN, ZHAO QIAN, GAO XUE-PING: "Non-precious transition metals as counter electrode of perovskite solar cells", ENERGY STORAGE MATERIALS, vol. 7, 1 April 2017 (2017-04-01), pages 40 - 47, XP093255778, ISSN: 2405-8297, DOI: 10.1016/j.ensm.2016.11.007 *

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