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WO2025005675A1 - Matériau de structure noyau/enveloppe et élément céramique pour appareil de fabrication de semi-conducteur l'utilisant - Google Patents

Matériau de structure noyau/enveloppe et élément céramique pour appareil de fabrication de semi-conducteur l'utilisant Download PDF

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Publication number
WO2025005675A1
WO2025005675A1 PCT/KR2024/008947 KR2024008947W WO2025005675A1 WO 2025005675 A1 WO2025005675 A1 WO 2025005675A1 KR 2024008947 W KR2024008947 W KR 2024008947W WO 2025005675 A1 WO2025005675 A1 WO 2025005675A1
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Prior art keywords
core
aluminum
shell
ceramic member
semiconductor manufacturing
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English (en)
Korean (ko)
Inventor
김윤호
김주환
김보성
전유권
김슬기
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KSM Component Co Ltd
University Industry Foundation UIF of Yonsei University
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KSM Component Co Ltd
University Industry Foundation UIF of Yonsei University
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Priority claimed from KR1020240083991A external-priority patent/KR20250003337A/ko
Application filed by KSM Component Co Ltd, University Industry Foundation UIF of Yonsei University filed Critical KSM Component Co Ltd
Publication of WO2025005675A1 publication Critical patent/WO2025005675A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C04B35/117—Composites
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/628—Coating the powders or the macroscopic reinforcing agents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering

Definitions

  • the present invention relates to a core/shell structured ceramic material and a ceramic member for a semiconductor manufacturing device using the same, and more specifically, to a core/shell structured ceramic material which is synthesized by coating a metal or ceramic compound having excellent plasma resistance on the surface of a ceramic powder, and which is used to manufacture a ceramic member for a semiconductor manufacturing device, such as an electrostatic chuck (ESC), a ceramic heater, etc., thereby having excellent plasma resistance and durability without a separate protective coating for improving plasma resistance, and at the same time having high thermal conductivity and volume resistivity, excellent hardness and density, and to a core/shell structured material and a ceramic member for a semiconductor manufacturing device using the same.
  • ESC electrostatic chuck
  • plasma-resistant ceramic materials are used that have a low etching rate in a given plasma environment, emit a small amount of etching byproducts into the chamber, and generate less contaminating particles.
  • oxide materials are generally widely used as these plasma-resistant ceramic materials.
  • Alumina is a typical plasma-resistant material, and recently, materials including yttria (Y 2 O 3 ) are widely used.
  • materials including yttria Y 2 O 3
  • AlN aluminum nitride
  • SiC silicon carbide
  • my plasma material is used in the form of a sintered product or a coated product on a sintered body.
  • a sintered product the raw material powder is molded and sintered in the same way as the conventional ceramic parts manufacturing method, and the resulting product is manufactured through appropriate processing.
  • the amount of raw materials used is significantly less than that of sintered products, and the products are made by coating various base materials such as anodized aluminum or sintered alumina with a thickness of several hundred micrometers or less.
  • Yttria material is known to be one of the materials with excellent plasma resistance characteristics, it is difficult to achieve dense sintering and all raw materials are imported, so the price is high. Therefore, despite the material's excellent plasma resistance characteristics, it is used more for coating than for bulk sintered bodies.
  • alumina, aluminum nitride, and yttria which were used as base materials for conventional electrostatic chucks or ceramic heaters, have problems such as cracks and pores occurring between them due to differences in thermal characteristics such as coefficient of thermal expansion. This causes frequent peeling or damage of the coating film, and the service life is short, requiring re-coating.
  • contamination by yttria particles has become a problem, and a solution to this problem is also necessary.
  • YAG Yttrium Aluminum Garnet, Y 3 Al 5 O 12
  • ceramic material that is a compound of yttria and alumina and has high thermal stability, creep resistance, optical properties, and plasma resistance, as a coating material.
  • Patent Document 1 Republic of Korea Registered Patent No. 10-0864205 (Processing chamber having a component with yttrium-aluminum coating)
  • Patent Document 2 Republic of Korea Registered Patent No. 10-1107542 (Yttria-containing coating for plasma reactor)
  • Patent Document 3 Republic of Korea Registered Patent No. 10-0899292 (Electrostatic chuck for semiconductor equipment having an insulating film that extends the lifespan)
  • Patent Document 4 Republic of Korea Publication Patent No. 10-2013-0090303 (Plasma spray coating material for manufacturing electrostatic chuck and its manufacturing method)
  • the present invention provides a core/shell structure material and a ceramic member for a semiconductor manufacturing device using the same, which can provide improved plasma resistance and durability against physical and/or chemical attacks caused in a plasma process environment without a separate coating for improving plasma resistance, while providing high volume resistivity and thermal conductivity.
  • the ceramic member can satisfy the properties required for an electrostatic chuck (ESC) or a ceramic heater, while reducing the level of contamination with metals and particles.
  • An exemplary embodiment of a core/shell structural material according to the present invention may be composed of a core comprising an aluminum compound and a shell comprising a plasma-resistant metal or ceramic compound at least partially surrounding the core.
  • the core may be formed of aluminum nitride (AlN) or alumina (Al 2 O 3 ), and the shell may be formed of yttrium aluminum garnet (YAG).
  • AlN aluminum nitride
  • Al 2 O 3 alumina
  • YAG yttrium aluminum garnet
  • the core may be formed of alumina (Al 2 O 3 ) or aluminum nitride (AlN), and the shell may be formed of yttria (Y 2 O 3 ) or magnesium oxide (MgO).
  • An exemplary embodiment of a ceramic member for a semiconductor manufacturing device can be formed by sintering the core/shell structure material, wherein the sintering can include sintering by a hot press process.
  • the ceramic member for the semiconductor manufacturing device may be formed by sintering the alumina-YAG core/shell structure material or the aluminum nitride-YAG core/shell structure material, and during the sintering process, the alumina core particles or the aluminum nitride core particles may be embedded between the YAG shell particles, such that a continuous YAG phase is formed along the grain boundary of the alumina or aluminum nitride phase.
  • the ceramic member for the semiconductor manufacturing device can be formed by sintering the alumina-yttria core/shell structure material or the aluminum nitride-yttria core/shell structure material, wherein during the sintering process, all or at least a portion of the yttria shell particles are converted into YAG through reaction sintering between the alumina core particles or the aluminum nitride core particles and the yttria shell particles, and thus the alumina core particles or the aluminum nitride core particles can be embedded between the converted YAG particles, such that a continuous YAG phase is formed along the interface of the alumina or aluminum nitride phase.
  • the ceramic member for the semiconductor manufacturing device may be formed through sintering of the alumina-magnesium oxide core/shell structure material or the aluminum nitride-magnesium oxide core/shell structure material.
  • the ceramic member for the semiconductor manufacturing device in the sintering process, all or at least a portion of the magnesium oxide shell particles are converted into magnesium aluminate spinel (MgAl 2 O 4 , hereinafter referred to as “spinel”) by reaction sintering between the alumina core particles or the aluminum nitride core particles and the magnesium oxide shell particles, and accordingly, the alumina core particles or the aluminum nitride core particles may be embedded between the spinel particles, and a continuous spinel phase may be formed along the interface of the alumina or aluminum nitride phase.
  • MgAl 2 O 4 magnesium aluminate spinel
  • the core/shell structure material according to the present invention and the ceramic member for a semiconductor manufacturing device using the same produce a ceramic member for a semiconductor manufacturing device in which a continuous YAG phase or spinel (MgAl 2 O 4 ) phase is formed along the interface (grain boundary) of an alumina or aluminum nitride phase using the core/shell structure material, thereby reducing interface defects at the alumina or aluminum nitride interface and providing a ceramic member having excellent plasma resistance and durability.
  • a continuous YAG phase or spinel (MgAl 2 O 4 ) phase is formed along the interface (grain boundary) of an alumina or aluminum nitride phase using the core/shell structure material, thereby reducing interface defects at the alumina or aluminum nitride interface and providing a ceramic member having excellent plasma resistance and durability.
  • the plasma resistance be improved by controlling the thickness and additives of the shell forming the YAG phase or spinel phase, but there is also an advantage in that the volume resistivity and thermal conductivity can be controlled to be equivalent to those of existing Al 2 O 3 and AlN electrostatic chucks.
  • the core/shell structure material according to the present invention and the ceramic member for a semiconductor manufacturing device using the same have high strength/hardness and density, and thus have the advantage of minimizing corrosion and erosion characteristics and particle and/or metal contamination in extreme environments of semiconductor processes.
  • the ceramic member according to the present invention has excellent plasma resistance and durability as described above, and at the same time possesses high volume resistance and thermal conductivity required when manufacturing an electrostatic chuck (ESC) or a ceramic heater, so that it has the advantage of being able to manufacture an electrostatic chuck and ceramic heater with excellent performance without a separate plasma-resistant coating layer.
  • ESC electrostatic chuck
  • ceramic heater so that it has the advantage of being able to manufacture an electrostatic chuck and ceramic heater with excellent performance without a separate plasma-resistant coating layer.
  • the ceramic member according to the present invention has the advantage of reducing the amount of expensive yttria used by using a ceramic material having a core/shell structure, and simplifying the manufacturing process and reducing the manufacturing cost by eliminating the need to form a separate plasma-resistant coating layer.
  • Figure 1 is a cross-sectional view of a core/shell structure material particle according to the present invention.
  • FIG. 2 is an exemplary cross-sectional view of the internal structure of a ceramic member for a semiconductor manufacturing device using a core/shell structure material according to the present invention.
  • FIG. 3 is an XRD graph of a ceramic member for a semiconductor manufacturing device according to one embodiment of the present invention.
  • Figure 4 is an XRD graph of a ceramic component for a typical semiconductor manufacturing device.
  • FIG. 5 is an image of a ceramic member for a semiconductor manufacturing device according to one embodiment of the present invention observed using a transmission electron microscope (TEM).
  • TEM transmission electron microscope
  • FIG. 6 is an image of a cross-section of a ceramic member for a semiconductor manufacturing device according to one embodiment of the present invention observed using a scanning electron microscope (SEM).
  • SEM scanning electron microscope
  • Figure 7 is an image of a cross-section of a ceramic member for a typical semiconductor manufacturing device observed using a scanning electron microscope.
  • yttrium-aluminum oxide should be understood to mean at least one of the crystalline phase forms of yttrium-aluminum oxide, including Y 3 Al 5 O 12 (yttrium-aluminum garnet, hereinafter abbreviated as YAG), YAlO 3 (yttrium-aluminum perovskite, hereinafter abbreviated as YAP), Y 4 Al 2 O 9 (yttrium-aluminum monoclinic, hereinafter abbreviated as YAM), and combinations thereof.
  • YAG and YAG phase are used interchangeably in the present invention.
  • alumina should be understood to be aluminum oxide comprising Al 2 O 3
  • yttria should be understood to be yttrium oxide comprising Y 2 O 3
  • spinel should be understood to be magnesium aluminate spinel comprising MgAl 2 O 4 .
  • the present invention provides a core/shell structured material in which a metal or ceramic compound having excellent plasma resistance is coated on the surface of an aluminum compound ceramic powder having high volume resistivity and thermal conductivity.
  • a ceramic member for semiconductor manufacturing devices which is manufactured by sintering the core/shell structure material, and satisfies high volume resistance and thermal conductivity required for an electrostatic chuck (ESC) or a ceramic heater, while having high strength/hardness and density and excellent plasma resistance.
  • ESC electrostatic chuck
  • An electrostatic chuck or ceramic heater manufactured using a ceramic member according to the present invention has the advantage of minimizing particle generation and thus having a low level of contamination with metals and particles even when exposed to extreme conditions such as high temperature and high energy plasma during a semiconductor manufacturing process, and of simplifying the manufacturing process and reducing manufacturing costs since there is no need to form a separate coating layer to improve plasma resistance.
  • the core/shell structure material according to one embodiment of the present invention is included in a ceramic member for a semiconductor manufacturing device, and as illustrated in FIG. 1, includes a core including an aluminum compound and a shell surrounding the core and coated on the surface of the core.
  • the above core comprises a ceramic material having high volume resistivity and thermal conductivity, and preferably comprises at least one of aluminum oxide and aluminum nitride (AlN) among aluminum compounds, and it is preferable that the aluminum oxide is alumina (Al 2 O 3 ).
  • the core may further include various ceramic materials having high volume resistivity and thermal conductivity and used in conventional electrostatic chucks and ceramic heaters.
  • the core contains only an aluminum compound.
  • the aluminum compound be included in the core in the form of a powder, and therefore, the core can have a form composed of particles.
  • the shell coated on the surface of the above core includes a metal or ceramic mixture material having excellent plasma resistance.
  • the above plasma-resistant metal or ceramic compound may be exemplified by one selected from the group consisting of yttrium-aluminum garnet (Y 3 Al 5 O 12 , YAG), yttrium-aluminum perovskite (YAlO 3 , YAP) and yttrium-aluminum monoclinic system (Y 4 Al 2 O 9 , YAM), yttrium-aluminum oxide, yttrium oxide, magnesium oxide, yttria-alumina-silica (Y 2 O 3 -Al 2 O 3 -SiO 2 , YAS), magnesium silicate (Mg 2 SiO 4 ) and mullite (3Al 2 O 3 ⁇ 2SiO 2 ), among which: Yttrium-aluminum garnet (YAG, Y 3 Al 5 O 12 ), yttria (Y 2 O 3 ) or magnesium oxide may be preferred as the plasma-resistant metal or ceramic compound.
  • the above-mentioned plasma-resistant metal or ceramic compound be included in the shell in the form of a powder, and therefore, the shell can have a form composed of particles.
  • the core/shell structural material according to the present invention may be in the form of an alumina core particle or an aluminum nitride core particle coated with an yttrium-aluminum oxide shell particle, an yttria shell particle, or a magnesium oxide shell particle.
  • the YAG shell particles can be formed by directly coating commercially available YAG powder on the surface of the core particle, or by coating YAG powder prepared by reaction-sintering a powder mixture of yttrium oxide (e.g., Y 2 O 3 ) and aluminum oxide (e.g., Al 2 O 3 ) on the surface of the core particle.
  • YAG powder prepared by reaction-sintering a powder mixture of yttrium oxide (e.g., Y 2 O 3 ) and aluminum oxide (e.g., Al 2 O 3 ) on the surface of the core particle.
  • the powder coated with yttria on the surface of the alumina core particle or the surface of the aluminum nitride core particle to heat treatment and ball milling, all or at least a portion of the yttria is converted into a YAG phase by a reaction between the alumina or aluminum nitride and the yttria, so that the converted YAG phase surrounds the surface of the alumina core particle or the surface of the aluminum nitride core particle.
  • the aluminum nitride-YAG core/shell structural material or the alumina-YAG core/shell structural material by forming an yttria coating layer on the surface of the aluminum nitride core particle or the surface of the alumina core particle, and performing heat treatment and ball milling treatment so that the yttria coated on the surface of the core particle can react with the aluminum nitride or alumina inside the coating layer and be converted into a YAG phase, thereby forming the aluminum nitride-YAG core/shell structural material or the alumina-YAG core/shell structural material.
  • the content ratio of the alumina and yttria or the content ratio of the aluminum nitride and yttria so that the yttria coated on the surface of the alumina core particle or the aluminum nitride core particle for forming the YAG shell reacts with the alumina or aluminum nitride to be completely converted into a YAG phase, and at the same time, the remaining amount of alumina or aluminum nitride after reacting with the yttria inside the shell converted into the YAG phase can form a core.
  • the content ratio of the alumina and yttria or the content ratio of the aluminum nitride and yttria is preferably adjusted according to the content of the YAG shell so that the YAG shell can be formed by converting all of the yttria into a YAG phase through the reaction of the alumina or aluminum nitride and yttria.
  • the content of the alumina core particles or the aluminum nitride core particles is preferably 50 wt% to 85 wt% with respect to the total weight of the core/shell structural material, and the content of the YAG shell particles is preferably 15 wt% to 50 wt%.
  • the content of the YAG shell particles is less than 15 wt%, the hardness and density of the ceramic member for semiconductor manufacturing devices manufactured through sintering of the core/shell structure material are reduced, making it difficult to secure sufficient plasma resistance.
  • the content of the YAG shell particles exceeds 50 wt%, the volume resistivity and thermal conductivity of the ceramic member are reduced, making it difficult to apply it to an electrostatic chuck or a ceramic heater.
  • the core/shell structural material is a material in which yttria shell particles are coated on the surface of alumina core particles or aluminum nitride core particles
  • the content of the alumina core particles or aluminum nitride core particles is preferably 70 wt% to 90 wt%
  • the content of the yttria shell particles is preferably 10 wt% to 30 wt%.
  • the yttria shell particles are converted into a YAG phase through reaction sintering of the alumina core particles or aluminum nitride core particles and the yttria shell particles during the sintering process, and at this time, the content of the alumina core particles or aluminum nitride core particles with respect to the total weight of the ceramic member is preferably 50 wt% to 85 wt%, and the content of the YAG is preferably 15 wt% to 50 wt%.
  • the thickness ratio of the core and shell can be appropriately adjusted to achieve a composition satisfying the content range of the core component of the core/shell structural material, i.e., alumina or aluminum nitride, and the shell component, i.e., YAG or yttria.
  • the particle radius of the core is R 1 and the thickness of the shell (i.e., the distance from the outermost surface of the core to the outermost surface of the shell) is R 2
  • the core/shell structure material is formed of an aluminum nitride-YAG or alumina-YAG structure
  • the R 1 /R 2 value is 4 to 25
  • the core/shell structure material is formed of an aluminum nitride-yttria or alumina-yttria structure, it is preferable that the R 1 /R 2 value is 9 to 42.
  • the core/shell structural material is alumina core particles or aluminum nitride core particles coated with magnesium oxide shell particles on the surface thereof
  • the content of the alumina core particles or aluminum nitride core particles is preferably 97.2 wt% to 85 wt%
  • the content of the magnesium oxide particles is preferably 2.8 wt% to 15 wt%.
  • the magnesium oxide shell particles are converted into a magnesium aluminate spinel (MgAl 2 O 4 , hereinafter referred to as “spinel”) phase through reaction sintering of the alumina core particles or aluminum nitride core particles and the magnesium oxide shell particles.
  • spinel magnesium aluminate spinel
  • the content of the alumina or aluminum nitride with respect to the total weight of the ceramic member is preferably 50 wt% to 90 wt%
  • the content of the spinel is preferably 10 wt% to 50 wt%.
  • the content of the alumina core particles or aluminum nitride core particles and the magnesium oxide shell particles can be controlled by adjusting the thickness ratio of the alumina core particles or aluminum nitride core particles and the magnesium oxide shell particles.
  • the particle radius of the core is R 1 and the thickness of the shell (i.e., the distance from the outermost surface of the core to the outermost surface of the shell) is R 2
  • the core/shell structural material is composed of an aluminum nitride-magnesium oxide or alumina-magnesium oxide structure
  • the R 1 /R 2 value be 16 to 114.
  • the shell may further include at least one selected from the group consisting of yttria-alumina-silica ( Y2O3 - Al2O3 -SiO2 , YAS), carbon (C), boron nitride (BN), silicon carbide (SiC), scandium (Sc), and niobium (Nb), which will be described in more detail in the ceramic member section to be described later.
  • Y2O3 - Al2O3 -SiO2 , YAS carbon
  • C boron nitride
  • SiC silicon carbide
  • Sc scandium
  • Nb niobium
  • the ceramic member for a semiconductor manufacturing device is a sintered body formed by sintering the core/shell structure material described above, and has a structure in which particle phases constituting the shell form a continuous phase along the grain boundary of the core particle phases.
  • the 'continuous phase' means that each of the shell particle phases surrounding a plurality of core particle phases is aggregated (combined). Therefore, the overall shape of the ceramic member has a form in which a plurality of core particle phases are partially positioned inside the continuous phase formed of shells, as illustrated in FIG. 2.
  • the ceramic member can be formed by sintering the core/shell structure material described above, as illustrated in FIG. 2, and can be a base material of an electrostatic chuck (ESC) or a ceramic heater used as a component of a chamber for a semiconductor manufacturing device.
  • ESC electrostatic chuck
  • the ceramic member can be formed by sintering the core/shell structure material described above, as illustrated in FIG. 2, and can be a base material of an electrostatic chuck (ESC) or a ceramic heater used as a component of a chamber for a semiconductor manufacturing device.
  • ESC electrostatic chuck
  • electrostatic chucks and ceramic heaters are exposed to high temperature and strong plasma environments during the semiconductor manufacturing process, and there is a problem that particles detached from the electrostatic chuck and ceramic heater contaminate the wafer surface due to corrosion and erosion caused by physical/chemical etching. Therefore, electrostatic chucks and ceramic heaters are required to have excellent plasma resistance characteristics, and in particular, electrostatic chucks are required to have high volume resistivity and thermal conductivity in addition to excellent plasma resistance characteristics.
  • the base substrate of the electrostatic chuck is manufactured with aluminum nitride or alumina materials that have excellent volume resistivity and thermal conductivity and also plasma resistance.
  • aluminum nitride and alumina materials show high levels of density and hardness during sintering, so their mechanical strength is excellent.
  • process gases that receive energy including halogen-based plasma, thereby forming gaseous byproducts such as aluminum fluoride (AlF 3 ), thereby generating contaminant particles, and thereby contaminating the inside of the chamber and the wafer.
  • the inventors of the present invention manufactured a bulk sintered body in the form of a mixture of alumina and YAG and conducted tests to manufacture a sintered ceramic base substrate having improved plasma resistance while maintaining the volume resistivity and thermal conductivity required in a general electrostatic chuck. Then, through tests, it was confirmed that when the alumina phase is included in an amount of 50 to 85 wt% and the YAG phase is included in an amount of 15 to 50 wt% based on the total weight of the bulk sintered body, the physical properties such as hardness, density, volume resistivity, and thermal conductivity are maintained at the same level as those of the existing alumina sintered body, while also improving corrosion resistance due to chemical erosion, thereby ensuring excellent plasma resistance.
  • the plasma resistance at the same level as that of the yttria-only or YAG-only bulk sintered body was not exhibited. This is thought to be because the alumina phase and the YAG phase are evenly distributed on the surface of the sintered body exposed to the plasma, so that the alumina phase present on the surface of the sintered body is corroded or eroded by the plasma gas or process gas, thereby forming gas by-products, and these gas by-products are detached from the sintered body due to the ion bombardment of the plasma.
  • the ceramic member for a semiconductor manufacturing device forms a bulk sintered body for an electrostatic chuck or ceramic heater base substrate by mixing an aluminum nitride or alumina material having high volume resistivity and thermal conductivity and a YAG or spinel material having excellent plasma resistance characteristics, and sintering the core/shell structure material so that the aluminum nitride or alumina phase included in the sintered body is surrounded by the YAG or spinel phase and not exposed to plasma.
  • the ceramic member can be formed by sintering the above-described aluminum nitride-YAG core/shell structure material or the alumina-YAG core/shell structure material, or can be formed by sintering the above-described aluminum nitride-yttria core/shell structure material, the alumina-yttria core/shell structure material, the aluminum nitride-magnesium oxide core/shell structure material or the alumina-magnesium oxide core/shell structure material.
  • the ceramic member When the ceramic member is formed by sintering the aluminum nitride-YAG core/shell structure material or the alumina-YAG core/shell structure material, as illustrated in FIG. 2, the YAG phases constituting the shell form continuous YAG phases along the interface (grain boundary) of the aluminum nitride or alumina phases constituting the core.
  • the aluminum nitride or alumina particles are sintered in a state where they are surrounded by continuous YAG phases and are formed so as not to be exposed on the surface of the ceramic member.
  • the internal crystal structure as described above even when the ceramic member is exposed to plasma, the aluminum nitride particles or alumina particles are exposed to minimal plasma, and only the YAG phase, which has relatively low chemical activity and excellent chemical corrosion resistance, is exposed to plasma, thereby improving the plasma resistance of the ceramic member to a level equivalent to or similar to that of the YAG bulk sintered body.
  • the volume resistivity and thermal conductivity of the ceramic member can be maintained at a level equivalent to or similar to that of a conventional aluminum nitride or alumina bulk sintered body.
  • the ceramic member when utilized as a base material for an electrostatic chuck or a ceramic heater, not only can excellent plasma resistance characteristics be secured without providing a separate coating layer for improving plasma resistance, but also it is possible to manufacture a sintered ceramic base material having high volume resistivity and thermal conductivity required for a conventional electrostatic chuck or ceramic heater.
  • the ceramic member when the ceramic member is formed by sintering the aluminum nitride-yttria core/shell structure material or the alumina-yttria core/shell structure material, all or at least a portion of the yttria constituting the shell is converted into a YAG phase by reaction sintering of the yttria constituting the shell and the aluminum nitride or alumina constituting the core during the sintering process.
  • the YAG phase reacts with the yttria and forms a continuous YAG phase along the interface of the remaining aluminum nitride or alumina phases, as in the sintering of the aforementioned aluminum nitride-YAG core/shell structure material or alumina-YAG core/shell structure material.
  • the ceramic member formed by sintering the aluminum nitride-yttria core/shell structure material or the alumina-yttria core/shell structure material it is possible to secure excellent plasma resistance properties by having the same internal crystal structure as the ceramic member formed by sintering the aluminum nitride-YAG core/shell structure material or the alumina-YAG core/shell structure material, and thus it is possible to manufacture a sintered ceramic base substrate having high volume resistivity and thermal conductivity required in a conventional electrostatic chuck or ceramic heater.
  • the ceramic member when forming the ceramic member by sintering the aluminum nitride-magnesium oxide core/shell structural material or the alumina-magnesium oxide core/shell structural material, during the sintering process, all or at least a portion of the magnesium oxide is converted into a spinel phase by reaction sintering of the magnesium oxide constituting the shell and the aluminum nitride or alumina constituting the core, and at this time, the converted spinel phase reacts with the magnesium oxide to form a continuous spinel phase along the interface of the remaining aluminum nitride or alumina phases.
  • the aluminum nitride particles or the alumina particles are surrounded by a spinel phase continuously formed along their interfaces, so that exposure to plasma is minimized, and only the spinel phase having relatively low chemical activity and excellent chemical erosion resistance is exposed to the plasma, thereby ensuring excellent plasma resistance characteristics, and making it possible to manufacture a sintered ceramic base material having high volume resistivity and thermal conductivity required in a conventional electrostatic chuck or ceramic heater.
  • the content of the alumina or aluminum nitride present inside the alumina-YAG ceramic member or the aluminum nitride-YAG ceramic member is preferably 50 wt% to 85 wt%, and the content of the YAG is preferably 15 wt% to 50 wt%.
  • the content of the alumina or aluminum nitride present inside the alumina-spinel ceramic member or the aluminum nitride-spinel ceramic member is preferably 50 wt% to 90 wt%, and the content of the spinel is preferably 10 wt% to 50 wt%.
  • the content of the alumina or aluminum nitride is less than 50 wt% outside the above content range, the volume resistivity and thermal conductivity of the ceramic member deteriorate, which causes problems in application to an electrostatic chuck or ceramic heater.
  • the content of the alumina or aluminum nitride exceeds the upper limit of the above range, there is a problem in that the content of the YAG or spinel phase contained therein is small, which deteriorates the plasma resistance characteristics.
  • the content of the YAG or spinel is below the lower limit of the above range, it is difficult to expect plasma resistance characteristics equivalent to or similar to those of the YAG or yttria bulk sintered body.
  • the content of the YAG or spinel exceeds 50 wt%, the volume resistivity and thermal conductivity may decrease, making it difficult to apply it to an electrostatic chuck or ceramic heater.
  • the sintering is a method of forming bulk materials from powders using heat, pressure and/or energy, and can be performed through various sintering methods used for sintering conventional ceramic materials, and can preferably be performed by a hot press method.
  • the ceramic member when manufacturing the ceramic member using an aluminum nitride-yttria core/shell structure material or an alumina-yttria core/shell structure material, there may be a problem that the YAG phase is hardly formed because the reaction sintering between aluminum nitride-yttria or alumina-yttria does not occur smoothly in general pressureless sintering. Therefore, it is preferable to manufacture the ceramic member through a hot-press sintering process.
  • the ceramic member having excellent plasma resistance and high volume resistivity and thermal conductivity is described by forming continuous YAG or spinel phases along the grain boundary of aluminum nitride or alumina phases constituting the core through sintering of the core/shell structure material, but the present invention is not limited thereto, and in addition to the YAG or spinel, any one selected from the group consisting of Yttria-Alumina-Silica or Yttrium aluminosilicate ( Y2O3 - Al2O3 - SiO2 ), carbon (C), boron nitride (BN), silicon carbide (SiC), scandium (Sc), and niobium (Nb) is formed at the grain boundary of the aluminum nitride or alumina phases. There may be one or more additional locations.
  • These additional components are evenly dispersed along the interface of the aluminum nitride or alumina phases with the YAG or spinel phase and distributed within the ceramic member, thereby further improving the thermal conductivity, mechanical strength and hardness, density, etc. of the ceramic member, thereby further improving the overall physical properties of the base member for an electrostatic chuck or ceramic heater manufactured using the ceramic member.
  • the additional components may be included in the process of forming the shell of the core/shell structural material, or may be added to the ceramic member by being mixed and sintered together with the core/shell structural material during the process of manufacturing the ceramic member through sintering of the core/shell structural material.
  • the additional components can play a role in improving the overall physical properties of the ceramic member, such as thermal conductivity, mechanical strength, hardness, and density, by being evenly dispersed while forming a continuous phase along the interface of the aluminum nitride and alumina phases constituting the core together with the shell component.
  • the present invention provides a ceramic member for a semiconductor manufacturing device having excellent plasma resistance and durability, in which a continuous YAG or spinel phase is formed along an interface of an alumina or aluminum nitride phase using a core/shell structure material.
  • the core/shell structure material according to the present invention and the ceramic member for a semiconductor manufacturing device using the same have high strength/hardness and density, and thus have the advantage of minimizing corrosion and erosion characteristics and particle and/or metal contamination in extreme environments of semiconductor processes.
  • the ceramic member according to the present invention has excellent plasma resistance and durability as described above, and at the same time possesses high volume resistance and thermal conductivity required when manufacturing an electrostatic chuck (ESC) or a ceramic heater, so that it has the advantage of being able to manufacture an electrostatic chuck and ceramic heater with excellent performance without a separate plasma-resistant coating layer.
  • ESC electrostatic chuck
  • ceramic heater so that it has the advantage of being able to manufacture an electrostatic chuck and ceramic heater with excellent performance without a separate plasma-resistant coating layer.
  • the ceramic member according to the present invention has the advantage of being able to reduce the content of expensive E-tri by applying a ceramic material having a core/shell structure, and also simplifying the manufacturing process and reducing the manufacturing cost because there is no need to form a separate plasma-resistant coating layer.
  • the method for manufacturing the ceramic member for the semiconductor manufacturing device includes a step of mixing and reacting an aluminum compound; and a plasma-resistant metal or ceramic compound; and may further include a step of performing ultrasonic treatment during the mixing and reaction.
  • the above ultrasonic treatment is intended to improve the dispersibility of a mixture, reactant or reaction product and promote uniform distribution of particles. It may be performed after all raw materials have been input or after only one raw material has been input, and there are no particular restrictions on the timing or number of times it is performed.
  • a linker such as urea (CO( NH2 ) 2 ) can be supplied separately before, after, or during the input of raw materials.
  • stirring can be done simultaneously with the input of raw materials.
  • reaction between the above raw materials can be performed in the presence of Di Water (3-distilled water), etc.
  • an aluminum compound may be supplied to a reactor at about 90° C., stirred, and then ultrasonicated at about 60° C. for about 15 minutes. At this time, an additional stirring process may be performed for about 15 minutes to raise the temperature again to about 90° C. Subsequently, a linker may be introduced into the reactor, and after about 2 minutes from this point in time, ultrasonicated at about 60° C. for about 15 minutes. Then, a stirring process may be performed for about 15 minutes to raise the temperature again to about 90° C. In addition, any one or more of the above processes may be repeated 2 to 6 times, preferably 3 to 5 times.
  • a plasma-resistant metal or ceramic compound may be additionally introduced into the reactor, and after about 2 minutes from this point in time, ultrasonicated at about 60° C. for about 15 minutes. Then, a stirring process may be performed for about 15 minutes to raise the temperature again to about 90° C. Finally, core/shell structured materials can be synthesized by additionally performing a stirring process for several minutes to several hours.
  • a washing process using Di Water (3-distilled water) and alcohol can be performed, and this washing process can be repeated multiple times.
  • the synthesized core/shell structure material by drying the synthesized core/shell structure material at a temperature of about 70 to 90° C. for 1 to 48 hours, preferably 12 to 36 hours, it is possible to obtain a core/shell structure material with higher purity.
  • the core/shell structure material manufactured as described above can be crushed using ball mill equipment, or sintered using a hot-press method to manufacture a sintered body having a structure in which the particle phases forming the shell form a continuous phase along the grain boundary of the core particle phases, i.e., a ceramic member for a semiconductor manufacturing device.
  • Yttrium-aluminum garnet (Y 3 Al 5 O 12 , YAG) that can be included in the above-mentioned 'shell'.
  • Conventional YAG manufacturing methods include sol-gel combustion, hydrothermal synthesis, and co-precipitation.
  • the sol-gel method is a method that can produce 'high-purity powder with uniform composition and fine particles', but most of the produced nanoparticles have an amorphous phase, so a heat treatment process for crystallization is required. Since the crystal phase is generally formed by maintaining a temperature of 800°C or higher for a certain period of time, there is a disadvantage in that the particle size increases and the manufacturing cost increases.
  • the hydrothermal synthesis method can produce 'crystalline powder and powder with spherical particles and small particle size' at a relatively low temperature (200°C, 168h).
  • a relatively low temperature 200°C, 168h.
  • it is difficult to synthesize a complex oxide with a uniform composition due to the interaction between the powder and water during the synthesis process, and also has the disadvantage of a very long time required.
  • Co-precipitation is a method of simultaneously precipitating various different ions from an aqueous or non-aqueous solution. It has the advantage of being able to disperse evenly since the powdery raw materials exist in the form of each ion during the YAG manufacturing process. However, it has the disadvantage of not being able to completely precipitate because impurities are co-precipitated during the precipitation process or the degree of dispersion is insufficient.
  • the applicant of the present invention applied a method of improving the dispersibility of a mixture, reactant or reaction product based on a co-precipitation method and inducing a uniform distribution of particles by including ultrasonic treatment.
  • alumina was supplied to a reactor at 90°C in the presence of Di Water (3-distilled water), and after 2 minutes, sonication was performed at 60°C for 15 minutes, and a stirring process was performed for an additional 15 minutes to raise the temperature again to 90°C.
  • urea CO( NH2 ) 2
  • urea was supplied to the reactor as a linker, and after 2 minutes, sonication was performed at 60°C for 15 minutes, and a stirring process was performed for 15 minutes to raise the temperature again to 90°C, and this process was repeated a total of 4 times.
  • yttria another raw material, was additionally supplied to the reactor, and after 2 minutes, sonication was performed at 60°C for 15 minutes, and a stirring process was performed for 15 minutes to raise the temperature again to 90°C. Subsequently, a stirring process was additionally performed for about 3 hours to synthesize a core/shell structure material, and a washing process using Diwater and ethanol was performed four times to remove unreacted residual linkers and other impurities, and then, to increase the purity of the synthesized core/shell structure material, it was dried in an oven at 80°C for 24 hours.
  • the core/shell structure material manufactured above was pulverized for 2 hours using a planetary ball mill and then hot-pressed at a temperature of 1,570° C. for 4 hours to manufacture a sintered body having a structure in which particle phases forming the shell (YAG) form a continuous phase along the interface of the core (alumina) particle phases, i.e., a ceramic member for a semiconductor manufacturing device.
  • YAG particle phases forming the shell
  • alumina alumina particle phases
  • alumina and yttria used in the synthesis of core/shell structural materials were introduced into the reactor at a weight ratio of 7:3, and the linker was used at 800 parts by weight per 100 parts by weight of yttria introduced (i.e., when linker was introduced once, 200 parts by weight were used per 100 parts by weight of yttria introduced).
  • a ceramic member for a semiconductor manufacturing device was manufactured by molding and sintering alumina according to a conventional method.
  • a ceramic component for a semiconductor manufacturing device was manufactured by molding and sintering yttrium-aluminum garnet (Y 3 Al 5 O 12 , YAG) according to a conventional method.
  • a ceramic component for a semiconductor manufacturing device was manufactured by molding and sintering yttria according to a conventional method.
  • a ceramic member for a semiconductor manufacturing device in which YAG and alumina are each independently included, was manufactured by mechanically mixing 60 wt% of alumina and 40 wt% of yttria according to a conventional method and then sintering.
  • a ceramic member for a semiconductor manufacturing device in which YAG and alumina are each independently included, was manufactured by mechanically mixing 70 wt% of alumina and 30 wt% of yttria according to a conventional method and then sintering.
  • Table 1 below shows the starting compositions and post-sintering compositions of Example 1 and Comparative Examples 1 to 7, respectively.
  • Departure Composition Composition after sintering Alumina Itria YAG Alumina Itria YAG Example 1 70 30 - 75.81 - 24.19 Comparative Example 1 100 - - 100 - - Comparative Example 2 - - 100 - - 100 Comparative Example 3 - 100 - - 100 - Comparative Example 4 60 40 - 30.2 - 69.8 Comparative Example 5 70 30 - 49.06 - 50.94 Comparative Example 6 80 20 - 64.91 - 35.09 Comparative Example 7 90 10 - 82.24 - 17.76
  • Fig. 3 is an XRD graph of a ceramic member for a semiconductor manufacturing device according to one embodiment of the present invention
  • Fig. 4 is an XRD graph of a typical ceramic member for a semiconductor manufacturing device (specifically, corresponding to the ceramic member manufactured in Comparative Example 5). It was also confirmed that the composition after sintering according to Table 1 was equivalent to the result calculated through peak values at specific 2 ⁇ .
  • Phase shape after sintering Example 1 A structure in which particle phases forming a shell along the interface of core particle phases form a continuous phase. Comparative Example 1 Single prize Comparative Example 2 Single prize Comparative Example 3 Single prize Comparative Example 4 Two awards exist independently of each other Comparative Example 5 Two awards exist independently of each other Comparative Example 6 Two awards exist independently of each other Comparative Example 7 Two awards exist independently of each other
  • FIG. 5 is an image (FIGS. 5a and 5b) of a ceramic member for a semiconductor manufacturing device according to an embodiment of the present invention observed using a transmission electron microscope (TEM)
  • FIG. 6 is an image of a cross-section of a ceramic member for a semiconductor manufacturing device according to an embodiment of the present invention observed using a scanning electron microscope (SEM)
  • FIG. 7 is an image of a cross-section of a conventional ceramic member for a semiconductor manufacturing device observed using a scanning electron microscope.
  • TEM transmission electron microscope
  • SEM scanning electron microscope
  • Example 1 when the ceramic member for a semiconductor manufacturing device manufactured in Example 1 was observed using a transmission electron microscope, the difference in brightness between the inside and the outside was clear, as shown in Figs. 5a and 5b. In addition, the component analysis results confirmed that alumina was located in the inside and YAG was located in the outside.
  • Example 3 After applying a voltage of 500 V/mm to each of the sintered bodies manufactured in Example 1 and Comparative Examples 1 to 7, the current was measured after 1 minute (measured under a vacuum atmosphere and room temperature) to calculate the volume resistivity, and the results are shown in Table 3 below.
  • each of the sintered bodies manufactured in Example 1 and Comparative Examples 1 to 7 was made into specimens according to the standard of ASTM C0408-88R11 using LFA 467 equipment from NETZSCH, and then the thermal conductivity was measured at room temperature to calculate the thermal conductivity, and the results are also shown in Table 3 below.
  • etching rate was measured for each sintered body manufactured in Example 1 and Comparative Examples 1 to 7, and the results are also shown in Table 3 below.
  • a DektakXT Stylus Profiler manufactured: Bruker was used to measure the etching rate.
  • Example 1 the hardness of each sintered body manufactured in Example 1 and Comparative Examples 1 to 7 was measured, and the results are also shown in Table 3 below.
  • a micro Vickers hardness tester (HM-210A, Mitutoyo) was used for the hardness measurement, and the microhardness scale was set to HV0.5.
  • Example 1 As a result of measuring the volume resistivity and thermal conductivity of each sintered body manufactured in Comparative Examples 1 to 7 of Example 1, as shown in Table 3, the sintered body of Example 1 exhibited higher volume resistivity than the conventional sintered body (Comparative Examples 1 to 7), and the thermal conductivity also satisfied the level required for electrostatic chucks and ceramic heaters.
  • the hardness and density of the sintered body manufactured in Example 1 were shown to be at a level capable of preventing or minimizing corrosion and erosion characteristics and particle and/or metal contamination in the extreme environment of a semiconductor process.
  • the sintered body manufactured in the above Example 1 has an etching rate of only 2.33 nm/min, so that even in a harsh plasma environment such as high temperature and high energy plasma, the amount of etching byproducts and the generation of contaminating particles are small, and accordingly, it was confirmed that the yield loss of a semiconductor device can be minimized by applying the sintered body manufactured in the above Example 1.
  • the sintered body of Comparative Example 3 also had an etching rate of only 2.11 nm/min, but the remaining physical properties, i.e., volume resistivity, thermal conductivity, and hardness, were particularly very low, making it unsuitable as a ceramic material for semiconductor manufacturing devices.
  • the ceramic member for a semiconductor manufacturing device must satisfy the levels required by an electrostatic chuck or ceramic heater in all of its major properties (volume resistivity, thermal conductivity, density, etching rate, and hardness).

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
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Abstract

La présente invention concerne un matériau de structure noyau/enveloppe capable de fournir une résistance volumique élevée et une conductivité thermique élevée tout en fournissant une résistance au plasma et une durabilité améliorées contre des attaques physiques et/ou chimiques provoquées dans un environnement de traitement au plasma sans revêtement séparé pour améliorer la résistance au plasma, et un élément céramique pour un dispositif de fabrication de semi-conducteur l'utilisant. La présente invention concerne un élément céramique pour un dispositif de fabrication de semi-conducteur, l'élément céramique comprenant : un noyau incluant un composé d'aluminium ; et une enveloppe entourant au moins partiellement le noyau et incluant un métal ou un composé céramique résistant au plasma, le noyau et l'enveloppe ayant une forme composée de particules, et l'élément céramique étant un corps fritté formé par frittage du matériau de structure noyau/enveloppe, et ayant une structure dans laquelle des phases de particules constituant l'enveloppe forment une phase continue le long d'une interface des phases de particule de noyau.
PCT/KR2024/008947 2023-06-30 2024-06-27 Matériau de structure noyau/enveloppe et élément céramique pour appareil de fabrication de semi-conducteur l'utilisant Pending WO2025005675A1 (fr)

Applications Claiming Priority (4)

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KR10-2023-0085173 2023-06-30
KR20230085173 2023-06-30
KR1020240083991A KR20250003337A (ko) 2023-06-30 2024-06-26 코어/쉘 구조 재료 및 이를 이용한 반도체 제조 장치용 세라믹 부재
KR10-2024-0083991 2024-06-26

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003313078A (ja) * 2002-04-18 2003-11-06 Taiheiyo Cement Corp 窒化アルミニウム焼結体およびそれを用いた静電チャック
KR20090087839A (ko) * 2008-02-13 2009-08-18 니뽄 가이시 가부시키가이샤 산화이트륨 재료, 반도체 제조 장치용 부재 및 산화이트륨 재료의 제조 방법
KR20090101245A (ko) * 2007-01-17 2009-09-24 토토 가부시키가이샤 세라믹 부재 및 내식성 부재
KR20190096798A (ko) * 2018-02-08 2019-08-20 엔지케이 인슐레이터 엘티디 반도체 제조 장치용 히터
KR20220164583A (ko) * 2021-03-18 2022-12-13 엔지케이 인슐레이터 엘티디 AlN 세라믹 기체 및 반도체 제조 장치용 히터

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003313078A (ja) * 2002-04-18 2003-11-06 Taiheiyo Cement Corp 窒化アルミニウム焼結体およびそれを用いた静電チャック
KR20090101245A (ko) * 2007-01-17 2009-09-24 토토 가부시키가이샤 세라믹 부재 및 내식성 부재
KR20090087839A (ko) * 2008-02-13 2009-08-18 니뽄 가이시 가부시키가이샤 산화이트륨 재료, 반도체 제조 장치용 부재 및 산화이트륨 재료의 제조 방법
KR20190096798A (ko) * 2018-02-08 2019-08-20 엔지케이 인슐레이터 엘티디 반도체 제조 장치용 히터
KR20220164583A (ko) * 2021-03-18 2022-12-13 엔지케이 인슐레이터 엘티디 AlN 세라믹 기체 및 반도체 제조 장치용 히터

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