[go: up one dir, main page]

WO2025085306A3 - Uniform silicon carbide epitaxial layer deposition system utilizing fluid preheating - Google Patents

Uniform silicon carbide epitaxial layer deposition system utilizing fluid preheating Download PDF

Info

Publication number
WO2025085306A3
WO2025085306A3 PCT/US2024/050647 US2024050647W WO2025085306A3 WO 2025085306 A3 WO2025085306 A3 WO 2025085306A3 US 2024050647 W US2024050647 W US 2024050647W WO 2025085306 A3 WO2025085306 A3 WO 2025085306A3
Authority
WO
WIPO (PCT)
Prior art keywords
carrier gas
gas
rotating chuck
heated
rotating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/US2024/050647
Other languages
French (fr)
Other versions
WO2025085306A2 (en
Inventor
Samuel J. WRIGHT
Maxim S. Shatalov
Christopher MORAITIS
Emmanuel Lakios
Yu Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CVD Equipment Corp
Original Assignee
CVD Equipment Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CVD Equipment Corp filed Critical CVD Equipment Corp
Publication of WO2025085306A2 publication Critical patent/WO2025085306A2/en
Publication of WO2025085306A3 publication Critical patent/WO2025085306A3/en
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A system for chemical vapor deposition, the system includes a process chamber having a top plate; a rotating chuck within the process chamber configured to support a growth substrate; a carrier gas inlet configured to direct a carrier gas flow to a preheat zone, the preheat zone configured to heat the carrier gas to a desired process temperature; a precursor gas inlet configured to direct precursor gas into contact with heated carrier gas to provide a heated mixture of carrier gas and precursor gas, the heated mixture of carrier gas and precursor gas being directed by the carrier gas flow across a top of the rotating chuck; and a purge port under the rotating chuck to purge gasses from the process chamber. Methods for depositing a coating on a rotating substrate include pre-heating a carrier gas; mixing an unheated precursor gas with the pre-heated carrier gas to provide a reactive gas mixture; directing the reactive gas mixture across the rotating substrate positioned on a rotating chuck; and purging gasses through a purge port positioned under the rotating chuck.
PCT/US2024/050647 2023-10-16 2024-10-10 Uniform silicon carbide epitaxial layer deposition system utilizing fluid preheating Pending WO2025085306A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202363590504P 2023-10-16 2023-10-16
US63/590,504 2023-10-16

Publications (2)

Publication Number Publication Date
WO2025085306A2 WO2025085306A2 (en) 2025-04-24
WO2025085306A3 true WO2025085306A3 (en) 2025-06-19

Family

ID=93257787

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2024/050647 Pending WO2025085306A2 (en) 2023-10-16 2024-10-10 Uniform silicon carbide epitaxial layer deposition system utilizing fluid preheating

Country Status (1)

Country Link
WO (1) WO2025085306A2 (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0823492A2 (en) * 1996-08-07 1998-02-11 Concept Systems Design Inc. Zone heating system with feedback control
WO2001007691A1 (en) * 1999-07-26 2001-02-01 Emcore Corporation Apparatus for growing epitaxial layers on wafers
US20020188376A1 (en) * 2000-08-18 2002-12-12 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
DE102013012082A1 (en) * 2013-07-22 2015-01-22 Aixtron Se Device for the thermal treatment of a semiconductor substrate, in particular for applying a coating
US20170114445A1 (en) * 2014-07-01 2017-04-27 Aixtron Se Device and method for generating a vapor for a cvd or pvd device from multiple liquid or solid source materials
US9711353B2 (en) * 2015-02-13 2017-07-18 Panasonic Corporation Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas
US20180258534A1 (en) * 2017-03-07 2018-09-13 Ap Systems Inc. Gas spraying apparatus, substrate processing facility including the same, and method for processing substrate using substrate processing facility
JP6566628B2 (en) * 2013-11-21 2019-08-28 アイクストロン、エスイー Apparatus and method for producing carbon nanostructures
CN116411258A (en) * 2021-12-30 2023-07-11 中微半导体设备(上海)股份有限公司 Thin film processing device and method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US8551248B2 (en) 2010-04-19 2013-10-08 Texas Instruments Incorporated Showerhead for CVD depositions

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0823492A2 (en) * 1996-08-07 1998-02-11 Concept Systems Design Inc. Zone heating system with feedback control
WO2001007691A1 (en) * 1999-07-26 2001-02-01 Emcore Corporation Apparatus for growing epitaxial layers on wafers
US20020188376A1 (en) * 2000-08-18 2002-12-12 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
DE102013012082A1 (en) * 2013-07-22 2015-01-22 Aixtron Se Device for the thermal treatment of a semiconductor substrate, in particular for applying a coating
JP6566628B2 (en) * 2013-11-21 2019-08-28 アイクストロン、エスイー Apparatus and method for producing carbon nanostructures
US20170114445A1 (en) * 2014-07-01 2017-04-27 Aixtron Se Device and method for generating a vapor for a cvd or pvd device from multiple liquid or solid source materials
US9711353B2 (en) * 2015-02-13 2017-07-18 Panasonic Corporation Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas
US20180258534A1 (en) * 2017-03-07 2018-09-13 Ap Systems Inc. Gas spraying apparatus, substrate processing facility including the same, and method for processing substrate using substrate processing facility
CN116411258A (en) * 2021-12-30 2023-07-11 中微半导体设备(上海)股份有限公司 Thin film processing device and method thereof

Also Published As

Publication number Publication date
WO2025085306A2 (en) 2025-04-24

Similar Documents

Publication Publication Date Title
US6506691B2 (en) High rate silicon nitride deposition method at low pressures
TWI285223B (en) Method and device for depositing crystalline layers from the gas phase onto crystalline substrates
TW589397B (en) Process chamber with a base with sectionally different rotational drive and layer deposition method in such a process chamber
JP3696632B2 (en) Gas inlet for wafer processing chamber
US7201942B2 (en) Coating method
US6821347B2 (en) Apparatus and method for depositing materials onto microelectronic workpieces
US5551982A (en) Semiconductor wafer process chamber with susceptor back coating
JP5619164B2 (en) CVD method and CVD reactor
JP6812961B2 (en) Epitaxy growth device and manufacturing method of semiconductor epitaxial wafer using it
JP2001068423A (en) Semiconductor thin film deposition equipment
US7584942B2 (en) Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US20060185591A1 (en) High temperature chemical vapor deposition apparatus
US20080047489A1 (en) Chemical vapor deposition reactor that pre-heats applied gas and substrate before reaction
US20230207377A1 (en) Semiconductor processing device with wafer edge purging
US20190032244A1 (en) Chemical vapor deposition system
WO2025085306A3 (en) Uniform silicon carbide epitaxial layer deposition system utilizing fluid preheating
US6194030B1 (en) Chemical vapor deposition velocity control apparatus
KR20120107806A (en) Vertical type thin film deposition apparatus with a function of improved film uniformity
US6994887B2 (en) Chemical vapor deposition apparatus and film deposition method
TW202526080A (en) Apparatus and method for individually influencing the layer growth of a layer deposited on a substrate in a CVD reactor containing a plurality of substrates
CN103361624B (en) Metallo-organic compound chemical vapor deposition method and device
TWI756117B (en) Wafer-level 2D material deposition device
KR100190909B1 (en) Multi-zone Showerheads for Chemical Vapor Deposition Reactors
CN223201965U (en) Silicon carbide epitaxial deposition equipment and base assembly thereof
KR20120110823A (en) Multi layer type thin film deposition apparatus with a function of improved film uniformity

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24795061

Country of ref document: EP

Kind code of ref document: A2