WO2025084714A1 - Method for forming silicon carbide film - Google Patents

Abstract

A method for forming a silicon carbide film on a substrate accommodated in a chamber according to an embodiment of the present invention may include the steps of: injecting a silicon (Si)-containing gas into the chamber; forming an amorphous silicon carbide film on the substrate by forming first hydrogen plasma in the chamber while injecting a carbon (C)-containing gas into the chamber; and crystallizing the amorphous silicon carbide film by forming second hydrogen plasma in the chamber. Therefore, according to embodiments of the present invention, a crystalline silicon carbide film can be formed at a low temperature. That is, a crystalline silicon carbide film having few or no defects can be formed.

Description

Method for forming silicon carbide film

The present invention relates to a method for forming a silicon carbide film, and more specifically, to a method for forming a silicon carbide film capable of forming a silicon carbide film at a low temperature.

A silicon carbide (SiC) film is formed by spraying a silicon (Si)-containing gas onto a substrate and spraying a carbon (C)-containing gas. At this time, the temperature inside the chamber must be heated to a high temperature of 1000℃ or higher in order to form a crystalline silicon carbide film.

However, when crystallizing a silicon carbide film in a high temperature environment of 1000℃ or higher, there is a problem that a large number of defects occur in the silicon carbide film. Accordingly, when manufacturing a semiconductor device including a silicon carbide film, a leakage current occurs due to the silicon carbide film.

(Prior art division)

(Patent Document 1) Korean Publication Patent No. 10-2000-0068834

The present invention provides a method for forming a silicon carbide film with a low occurrence of defects.

The present invention provides a method for forming a silicon carbide film capable of forming a crystalline silicon carbide film at low temperatures.

In order to achieve the above object, the present invention provides a method for forming a silicon carbide film on a substrate accommodated in a chamber, the method including the steps of: injecting a silicon (Si)-containing gas into the interior of the chamber; forming a first hydrogen plasma inside the chamber while injecting a carbon (C)-containing gas into the interior of the chamber, thereby forming an amorphous silicon carbide film on the substrate; and forming a second hydrogen plasma inside the chamber, thereby crystallizing the amorphous silicon carbide film.

The step of forming the first and second hydrogen plasmas may include a step of supplying a hydrogen-containing gas into the interior of the chamber, and the first and second hydrogen plasmas may be a silicon carbide film that is a direct plasma formed by discharging a hydrogen-containing gas inside the chamber.

The step of forming the first and second hydrogen plasmas may be the formation of a silicon carbide film including the step of supplying argon (Ar) gas into the interior of the chamber.

The step of forming the first and second hydrogen plasmas may include a step of supplying RF power to the chamber, and the RF power may be 800 W to 900 W.

The step of forming the first and second hydrogen plasmas may include a step of supplying RF power to the chamber, and the RF power may be 2.66 W/cm ² to 3 W/cm ² per unit area of the substrate.

In forming the first and second hydrogen plasmas, it may be a silicon carbide film formed by utilizing the potential difference between the first electrode and the second electrode installed inside the chamber.

It may be a silicon carbide film in which the time for forming the second hydrogen plasma is longer than the time for forming the first hydrogen plasma.

In the step of injecting the silicon (Si) containing gas, the step of forming an amorphous silicon carbide film, and the step of crystallizing the amorphous silicon carbide film, the silicon carbide film may be a film in which the temperature inside the chamber is controlled to 300°C to 700°C.

It may be a silicon carbide film including a step of forming hydrogen plasma inside the chamber between the step of injecting the silicon (Si)-containing gas and the step of forming a first hydrogen plasma while injecting the carbon (C)-containing gas.

The method may further include at least one of a purge step for purging the interior of the chamber by injecting a purge gas into the chamber and a pumping step for discharging the gas inside the chamber to the outside to lower the pressure inside the chamber, wherein at least one of the purge step and the pumping step may be a silicon carbide film that is performed between the step of injecting the silicon (Si)-containing gas and the step of forming the first hydrogen plasma while injecting the carbon (C)-containing gas.

The present invention provides a method for forming a silicon carbide film, comprising at least one of a purge step for purging the interior of the chamber by injecting a purge gas into the interior of the chamber and a pumping step for discharging the gas inside the chamber to the outside to lower the pressure inside the chamber, wherein at least one of the purge step and the pumping step is performed after completing a step for crystallizing an amorphous silicon carbide film by forming a second hydrogen plasma inside the chamber.

A method for forming a silicon carbide film on a substrate accommodated in a chamber including a dome-shaped upper body having an inclined surface whose height increases toward the center in the width direction and a dome-shaped lower body having an inclined surface whose height decreases toward the center in the width direction, the method comprising: a step of injecting a silicon (Si)-containing gas into the interior of the chamber using a first gas injection unit connected to the chamber; a step of injecting a carbon (C)-containing gas into the interior of the chamber using a second gas injection unit connected to the chamber while forming a first hydrogen plasma inside the chamber, thereby forming an amorphous silicon carbide film on the substrate; and a step of forming a second hydrogen plasma inside the chamber, thereby crystallizing the amorphous silicon carbide film.

A method for forming a silicon carbide film on a substrate accommodated in a chamber is provided, the method comprising: a step of injecting a silicon (Si)-containing gas into the interior of the chamber through a first gas passage provided in a first electrode installed in the chamber; a step of injecting a carbon (C)-containing gas into the interior of the chamber through a second gas passage provided in a second electrode installed in the chamber, thereby forming a first hydrogen plasma between the first electrode and the second electrode, thereby forming an amorphous silicon carbide film on the substrate; and a step of forming a second hydrogen plasma between the first electrode and the second electrode, thereby crystallizing the amorphous silicon carbide film.

A method for forming a silicon carbide film on a substrate accommodated in a chamber is provided, comprising: a step of placing a substrate on an outer region of a support surface of a substrate supporter installed inside the chamber; a step of spraying a silicon (Si)-containing gas into an outer region of the support surface using an opening provided in an injection unit connected to the chamber and provided at a position corresponding to the outer region of the support surface; a step of spraying a carbon (C)-containing gas into the outer region of the support surface using the opening of the injection unit while forming a first hydrogen plasma inside the chamber, thereby forming an amorphous silicon carbide film on the substrate; and a step of forming a second hydrogen plasma inside the chamber, thereby crystallizing the amorphous silicon carbide film.

A method for forming a silicon carbide film on a substrate accommodated in a chamber is provided, comprising: a step of placing the substrate on a support surface of a substrate supporter installed inside the chamber; a step of spraying a silicon (Si)-containing gas onto the entire area of the support surface using a first flow path provided in an injection unit connected to the chamber and configured to spray gas onto the entire surface of the support surface; a step of spraying a carbon (C)-containing gas onto the entire area of the support surface using a second flow path provided in the injection unit and configured to spray gas onto the entire surface of the support surface while forming a first hydrogen plasma inside the chamber, thereby forming an amorphous silicon carbide film on the substrate; and a step of forming a second hydrogen plasma inside the chamber, thereby crystallizing the amorphous silicon carbide film.

A method for forming a silicon carbide film on a substrate accommodated in a chamber comprising a first plate including a first opening and a second opening; a second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of third openings arranged in an alternating manner with the first and second openings; and a turbo molecular pump (TMP), the method comprising: a step of injecting a silicon (Si)-containing gas into the interior of the chamber using the first opening connected to the chamber; a step of injecting a carbon (C)-containing gas into the interior of the chamber using the second opening connected to the chamber while forming a first hydrogen plasma inside the chamber, thereby forming an amorphous silicon carbide film on the substrate; and a step of forming a second hydrogen plasma inside the chamber, thereby crystallizing the amorphous silicon carbide film.

A chamber including the above turbo molecular pump (TMP) can form a silicon carbide film at a high vacuum pressure controlled to a pressure of 10 mTorr or more and 50 mTorr or less.

The above first opening is connected to a gas storage unit, and a silicon carbide film can be formed that temporarily injects one or more gases by being connected from the gas storage unit to the first opening.

The above gas storage unit includes a pile-up tank, and the pile-up tank is connected to a gas path to fill one or more gases, and the filled gas can form a silicon carbide film that temporarily sprays the gas.

According to embodiments of the present invention, a crystalline silicon carbide film can be formed at a low temperature. That is, a crystalline silicon carbide film with few or no defects can be formed.

FIG. 1 is a drawing illustrating a state in which a silicon carbide film is formed on a substrate by a method according to the first embodiment of the present invention.

FIG. 2 is a drawing illustrating a state in which a silicon carbide film is formed on a film formed on one surface of a substrate using a method according to the first embodiment of the present invention.

Figures 3 (a) to (c) are process diagrams conceptually illustrating a method of forming a silicon carbide film on a substrate using a method according to the first embodiment of the present invention.

FIG. 4 is a schematic drawing of a first substrate processing device for forming a silicon carbide film according to embodiments of the present invention.

Figures 5 (a) to (d) are process diagrams conceptually illustrating a method of forming a silicon carbide film on a substrate using a method according to a second embodiment of the present invention.

FIG. 6 is a schematic drawing of another embodiment of a substrate processing device capable of forming a silicon carbide film according to an embodiment of the present invention.

Figure 7 is a schematic perspective view of a substrate support part in a substrate processing device of another embodiment.

Fig. 8 is a plan view of a substrate support part in a substrate processing device of another embodiment.

Figure 9 is a schematic bottom view of a spraying unit in a substrate processing device of another embodiment.

Figure 10 is a schematic bottom view of a spraying unit in a substrate processing device of another embodiment.

Figure 11 is a schematic cross-sectional side view of a spraying section in a substrate processing device of another embodiment.

FIG. 12 is a flowchart schematically showing a method of forming a silicon carbide film according to another embodiment of the present invention using a substrate processing apparatus according to another embodiment.

Figure 13 is a cross-sectional side view of the injection unit of another embodiment of a substrate processing device.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and these embodiments are provided only to ensure that the disclosure of the present invention is complete, and to fully inform those skilled in the art of the scope of the invention. The drawings may be exaggerated in order to explain the embodiments of the present invention.

FIG. 1 is a drawing illustrating a state in which a silicon carbide film is formed on a substrate by a method according to a first embodiment of the present invention. FIG. 2 is a drawing illustrating a state in which a silicon carbide film is formed on a lower film formed on one surface of a substrate by a method according to a first embodiment of the present invention.

Referring to FIG. 1, a silicon carbide film (20) may be formed on a substrate (10). The substrate (10) may be any one of a wafer, glass, and metal. When the substrate (10) is a wafer, the wafer may be any one of a Si wafer, a SiC wafer, and a GaAs wafer, for example.

Referring to FIG. 2, the substrate (10) may have a predetermined film (hereinafter, the underlying film (11)) formed on at least one surface, and a silicon carbide film (20) may be formed on the underlying film (11). At this time, the silicon carbide film (20) may be formed, for example, for the purpose of a hard mask. That is, when forming the silicon carbide film (20) on the underlying film (11), the silicon carbide film (20) is formed so that a part of the underlying film (11) is exposed. That is, the patterned silicon carbide film (20) is formed on the underlying film (11). Accordingly, some areas of the underlying film (11) are shielded by the silicon carbide film (20), and other areas are exposed to the outside. Thereafter, for example, when an etching process or a deposition process is performed, the exposed areas of the underlying film (11) are etched or a thin film is deposited. However, the area shielded by the silicon carbide film (20) among the underlying film (11) is not etched or a thin film is deposited. That is, the silicon carbide film (20) acts as a mask by shielding a part of the underlying film (11) so that the underlying film (11) is selectively etched or deposited, and this silicon carbide film (20) is called a hard mask.

In the above, it has been described that the silicon carbide film (20) for the hard mask is formed on the underlying film (11) formed on one side of the substrate (10). However, this is not limited to this, and the silicon carbide film (20) for the hard mask can be formed directly on the substrate (10) on which the underlying film (11) is not formed.

Additionally, the silicon carbide film (20) can be formed for use as an active layer constituting a power semiconductor device.

Figures 3 (a) to (c) are process diagrams conceptually illustrating a method of forming a silicon carbide film on a substrate using a method according to the first embodiment of the present invention.

A method for forming a silicon carbide film (20) may include a step of forming a silicon-containing film (21) on a substrate (10) by injecting a gas containing silicon (Si) toward the substrate (10), a step of forming a first hydrogen plasma while injecting a carbon (C)-containing gas to form a silicon carbide film (22), and a step of forming a second hydrogen plasma to crystallize the silicon carbide film (22) to form a crystalline silicon carbide film (20).

Here, the gas containing silicon (Si) may be a 'source gas', and the gas containing carbon (C) may be a 'reactant gas'.

For convenience of explanation, the step of forming the first hydrogen plasma by injecting carbon-containing gas is described below as the ‘carbon-containing gas injection step.’

In forming a silicon carbide film (20), the 'silicon-containing gas injection step - carbon-containing gas injection step - hydrogen plasma forming step' can be one silicon carbide film forming cycle (CY). That is, the method for forming a silicon carbide film (20) includes a silicon carbide film forming cycle (CY), and the silicon carbide film forming cycle (CY) can include a silicon-containing gas injection step, a carbon-containing gas injection step, and a hydrogen plasma forming step.

In addition, the method for forming a silicon carbide film (20) may include a purge step. That is, the method for forming a silicon carbide film (20) may further include at least one of a purge step (first purge step) performed between a silicon-containing gas injection step and a carbon-containing gas injection step, and a purge step (second purge step) performed after a hydrogen plasma forming step. Here, purge may mean supplying a purge gas into the interior of a chamber into which a substrate (10) is introduced and exhausting it through an exhaust unit.

A turbo molecular pump (TMP) (100-1) can be connected between the exhaust section and the chamber. And, through the power pump, the pressure inside the chamber can be quickly lowered, impurities inside can be quickly exhausted, and a high vacuum process can be enabled. Using the turbo molecular pump (100-1), the high vacuum pressure can be controlled to 10 mTorr or more and 50 mTorr or less.

When the method for forming a silicon carbide film (20) includes a purge step, 'silicon-containing gas injection step - 1st purge step - carbon-containing gas injection step - hydrogen plasma forming step - 2nd purge step' can be one silicon carbide film forming cycle (CY). That is, the method for forming a silicon carbide film includes a silicon carbide film forming cycle (CY), and the silicon carbide film forming cycle (CY) can include a silicon-containing gas injection step, a 1st purge step, a carbon-containing gas injection step, a hydrogen plasma forming step, and a 2nd purge step. At this time, at least one of the 1st purge step and the 2nd purge step may be omitted in the silicon carbide film forming cycle (CY).

And, the silicon carbide film formation cycle (CY) as described above can be performed n times (n: 1, 2, 3, ...). That is, the step of forming the silicon carbide film (20) can include one (n=1) or two or more (n=2) silicon carbide film formation cycles (CY). Here, two or more times can mean multiple times.

In another embodiment, the method for forming a silicon carbide film (20) may include a pumping step of pumping the inside of a chamber into which a substrate is introduced to control pressure. When the method for forming a silicon carbide film (20) includes a pumping step, 'silicon-containing gas injection step - first pumping step - carbon-containing gas injection step - hydrogen plasma forming step - second pumping step' may be one silicon carbide film forming cycle (CY). That is, the method for forming a silicon carbide film includes a silicon carbide film forming cycle (CY), and the silicon carbide film forming cycle (CY) may include a silicon-containing gas injection step, a first pumping step, a carbon-containing gas injection step, a hydrogen plasma forming step, and a second pumping step. At this time, at least one of the first pumping step and the second pumping step may be omitted in the silicon carbide film forming cycle (CY).

Here, the first pumping stage and the second pumping stage may be stages of lowering the pressure inside the chamber by operating a pump, for example, a power pump, without injecting purge gas into the inside of the chamber.

And, the silicon carbide film formation cycle (CY) as described above can be performed n times (n: 1, 2, 3, …). That is, the step of forming the silicon carbide film (20) can include one (n=1) or two or more (n ≥ 2) silicon carbide film formation cycles (CY). Here, two or more times can mean multiple times.

In this way, when the silicon carbide film formation cycle (CY) includes a pumping step, there may be an advantage in that the gas remaining inside the chamber (100) and inside the injection unit that injects gas into the inside of the chamber can be quickly exhausted out of the chamber.

FIG. 4 is a schematic drawing of a first substrate processing device for forming a silicon carbide film according to embodiments of the present invention.

Below, the first substrate processing device illustrated in Fig. 4 is described.

Referring to FIG. 4, the substrate processing device may include a chamber (100), a support (200) installed inside the chamber (100) to support a substrate (10), first and second gas injection units (300a, 300b) installed inside the chamber (100) so as to face the support (200), a gas supply unit (400) for providing process gas to the first and second gas injection units (300a, 300b), an antenna (610) having a coil for inducing an electric field inside the chamber (100) for plasma generation, and a power supply unit (620) connected to the antenna (610).

In addition, the substrate processing device may include a heating unit (500) installed to face the support (200), a driving unit (700) that raises and lowers or rotates the support (200), and an exhaust unit (800) that exhausts gas and impurities inside the chamber (100).

And, the substrate processing device may include a pump installed between the exhaust section (800) and the chamber (100), and the pump may be, for example, a turbo molecular pump (100-2) connected. When the turbo molecular pump (TMP, 100-2) is operated, the pressure inside the chamber can be quickly lowered, and impurities inside can be quickly removed. Through this, the inclusion of impurities in the silicon carbide film can be prevented.

The chamber (100) may be a cylinder shape having an internal space, and may be, for example, a dome shape as illustrated in FIG. 4. More specifically, the chamber (100) may include a chamber body (110), an upper body (120) installed on the upper side of the chamber body (110), and a lower body (130) installed on the lower side of the chamber body (110). The chamber body (110) may be a cylinder shape with the upper and lower sides open, and the upper body (120) may be installed to cover the upper opening of the chamber body (110), and the lower body (130) may be installed to cover the lower opening of the chamber body (110). In addition, the upper body (120) may be a dome shape having an inclined surface whose height increases toward the center in the width direction thereof. In addition, the lower body (130) may be a dome shape having an inclined surface whose height decreases toward the center in the width direction thereof. Each of these chambers (100), i.e., the chamber body (110), the upper body (120) and the lower body (130), may be made of a transparent material that allows light to pass through, for example, quartz.

The gas supply unit (400) may include a source gas supply unit (410) that supplies a gas containing silicon (Si) (source gas), a reactant gas supply unit (420) that supplies a gas containing carbon (reactant gas), a hydrogen-containing gas supply unit (430) that supplies a hydrogen-containing gas, and a discharge gas supply unit (440) that supplies a gas for discharge. In addition, the gas supply unit (400) may further include a purge gas supply unit (not shown) that supplies a purge gas.

In addition, the gas supply unit (400) may include a first transport pipe (450a) connecting the source gas supply unit (410), the reactant gas supply unit (420) and the first gas injection unit (300a), and a second transport pipe (450b) connecting the hydrogen-containing gas supply unit (430) and the discharge gas supply unit (440) and the second gas injection unit (300b).

In addition, the gas supply unit (400) may include a plurality of first connecting pipes (460a) connecting the source gas supply unit (410), the reactant gas supply unit (420) and the first transfer pipe (450a), a valve installed in each of the plurality of first connecting pipes (460a), a plurality of second connecting pipes (460b) connecting the hydrogen-containing gas supply unit (430) and the discharge gas supply unit (440) and the second transfer pipe (450b), and a valve installed in each of the plurality of second connecting pipes (460b).

And, using the substrate processing device as described above, a silicon carbide film (20) can be formed on a substrate (10).

Below, a method for forming a silicon carbide film (20) will be described in more detail with reference to FIGS. 3 (a) to (c) and FIG. 4.

First, the substrate (10) is introduced into the chamber (100) and the substrate (10) is placed on the support (200). Then, the chamber (100) is heated using the heating unit (500). At this time, the temperature inside the chamber (100) is heated to 300°C to 600°C (300°C or higher and 600°C or lower). The temperature inside the chamber (100) is maintained at 300°C to 600°C while the process is being performed.

When the temperature inside the chamber (100) is heated to 300° C. to 600° C., a gas (source gas) containing silicon (Si) is injected toward the substrate (10). That is, the silicon-containing gas received in the source gas supply unit (410) is supplied to the first gas injection unit (300a) through the first connecting pipe (460a) and the first transfer pipe (450a). Accordingly, the silicon-containing gas is injected from the first gas injection unit (300a). That is, the silicon-containing gas is injected into the interior of the chamber (100) into which the substrate (10) is introduced. Here, the silicon-containing gas may be, for example, SiH ₂ Cl ₂ (Dichlorosilane; DCS) gas. Of course, the silicon-containing gas is not limited to the materials described above, and various gases containing silicon (Si) may be used.

When a silicon-containing gas is sprayed toward the substrate (10), a component included in the silicon-containing gas is deposited or adsorbed on one surface of the substrate (10). Accordingly, a film containing silicon (Si) (hereinafter, a silicon-containing film (21)) is deposited on the substrate (10) as shown in (a) of Fig. 3. More specifically, when SiH ₂ Cl ₂ gas is used as the silicon-containing gas, a SiH ₂ Cl ₂ film, which is a film containing silicon (Si) and chlorine (Cl), can be formed on the substrate (10).

When the step of injecting the silicon-containing gas is completed, the purge gas is injected into the interior of the chamber (100) and the exhaust unit (800) is operated to purge the interior of the chamber (100) into which the substrate (10) is introduced (first purge). That is, the interior of the chamber (100) is purged by operating the exhaust unit (800) while injecting the purge gas, for example, argon (Ar) gas, into the interior of the chamber (100). Here, the exhaust unit (800) may be a means including a pipe connected to the chamber (100) and a pump connected to the pipe.

When the first purge is completed, the first hydrogen plasma is generated while injecting a gas containing carbon toward the silicon-containing film (21). That is, the carbon-containing gas received in the reactant gas supply unit (420) is supplied to the first gas injection unit (300a) through the first connecting pipe (460a) and the first transfer pipe (450a). Accordingly, the carbon-containing gas is injected from the first gas injection unit (300a). That is, the gas containing carbon (C) is injected into the interior of the chamber (100) into which the substrate (10) is introduced. In addition, the hydrogen-containing gas received in the hydrogen-containing gas supply unit (430) is supplied to the second gas injection unit (300b) through the second connecting pipe (460b) and the second transfer pipe (450b). Accordingly, the hydrogen-containing gas is injected from the second gas injection unit (300b). That is, a gas containing hydrogen (H) is injected into the interior of the chamber (100) into which the substrate (10) is introduced. Here, the hydrogen-containing gas may be 'hydrogen gas'. In this way, while injecting the carbon-containing gas and the hydrogen-containing gas into the interior of the chamber (100), the gas injected into the interior of the chamber (100) is discharged to form a first hydrogen plasma. To this end, power or electric power is applied to the antenna (610) using the power supply unit (620). At this time, the power applied to the antenna (610) may be RF (Radio Frequency) RF power. In addition, the RF power applied to the antenna (610) may be 800 Watt to 900 Watt (hereinafter, 800 W to 900 W) or 2.66 W/cm ² to 3 W/cm ² per unit area of the substrate. In addition, the time for forming the first hydrogen plasma while injecting the carbon-containing gas may be 1 to 3 seconds. That is, the first hydrogen plasma may be formed while injecting the carbon-containing gas for 1 to 3 seconds. Here, since the antenna (610) is connected to the chamber (100), applying RF power to the antenna (610) may mean applying RF power to the chamber (100).

It is preferable to additionally inject discharge gas into the interior of the chamber (100) while injecting carbon-containing gas and hydrogen-containing gas. To this end, the discharge gas contained in the discharge gas supply unit (440) is supplied to the second gas injection unit (300b) through the second connecting pipe (460b) and the second conveying pipe (450b). Accordingly, the discharge gas is injected from the second gas injection unit (300b). That is, the discharge gas is injected into the interior of the chamber (100). Here, the discharge gas may include argon (Ar) gas.

In this way, since the hydrogen-containing gas is supplied into the interior of the chamber (100) and the hydrogen-containing gas is discharged inside the chamber (100) to generate the first hydrogen plasma, the first hydrogen plasma is a direct plasma. That is, it is not a remote plasma that supplies plasma generated outside the chamber (100) to the exterior of the chamber (00), but a direct plasma that generates plasma inside the chamber (100).

When a carbon-containing gas is injected into the interior of the chamber (100), carbon (C) may be adsorbed or deposited on the silicon-containing film (21). Accordingly, an amorphous silicon carbide film (22) containing silicon (Si) and carbon (C) may be formed. When the carbon-containing gas is injected into the interior of the chamber (100) in this manner, a hydrogen-containing gas is injected as described above to form a first hydrogen plasma. That is, the first hydrogen plasma is formed while the carbon-containing gas is injected. The first hydrogen plasma serves to prevent silicon (Si) from being separated from the silicon-containing film (21). That is, by forming the first hydrogen plasma, it is possible to suppress or prevent silicon (Si) from being separated from the silicon-containing film (21).

Meanwhile, in order to prevent silicon from being separated from the silicon-containing film (21), the inside of the chamber (100) was heated to a high temperature of 1000°C or higher. However, when a silicon carbide film is formed and crystallized under conditions of a high temperature of 1000°C or higher, a large number of defects occur in the silicon carbide film (20). Accordingly, when the crystallized silicon carbide film (20) is used as a conductive film, there is a problem that leakage current occurs due to the silicon carbide film.

On the other hand, in the embodiment of the present invention, by forming the first hydrogen plasma when injecting the carbon-containing gas, it is possible to suppress or prevent the separation of silicon (Si) from the silicon-containing film (21). That is, even when the temperature inside the chamber (100) is not controlled to a high temperature of 1000°C or higher, but rather to a low temperature of 300°C to 600°C, it is possible to suppress or prevent the separation of silicon (Si) from the silicon-containing film (21). In other words, by forming the first hydrogen plasma when injecting the carbon-containing gas, an amorphous silicon carbide film (22) can be formed even at a low temperature (300°C to 600°C). Accordingly, an amorphous silicon carbide film (22) with few or no defects can be formed.

In addition, the silicon-containing gas may contain chlorine (Cl) in addition to silicon, and chlorine (Cl) may deteriorate the characteristics of the silicon carbide film. For example, the electrical resistivity of the silicon carbide film may increase due to chlorine (Cl). However, in the embodiment, by forming the first hydrogen plasma while injecting the carbon-containing gas, the silicon carbide film (22) with a reduced chlorine (Cl) content may be formed. That is, when the first hydrogen plasma is formed, hydrogen (H) ions and chlorine (Cl) contained in the silicon-containing film (21) react to generate hydrochloric acid (HCl) gas. Then, this hydrochloric acid (HCl) gas is exhausted to the outside through the exhaust unit (800). Accordingly, a silicon carbide film that does not contain chlorine (Cl) or has a low chlorine (Cl) content can be formed, and accordingly, the electrical resistivity of the silicon carbide film can be reduced.

In forming the first hydrogen plasma, RF power is applied to the antenna (610). At this time, RF power of 800 W to 900 W is applied to the antenna (610), or 2.66 W/cm ² to 3 W/cm 2 per unit area based on the substrate ( ¹⁰ ).

Meanwhile, if the RF power applied to the antenna (610) is less than 800 W or the RF power per unit area of the substrate (10) is less than 2.66 W/cm ² , a large amount of silicon (Si) may be separated from the silicon-containing film (21). Therefore, the RF power applied to the antenna (610) is set to 800 W or more or the RF power per unit area of the substrate (10) is set to 2.66 W/cm ² or more.

And, the RF power applied to the antenna (610) is not particularly limited in the range of 800 W or more. In addition, the RF power per unit area of the substrate is not particularly limited in the range of 2.66 W/cm ² or more. However, the maximum RF power that can be applied may vary depending on the substrate processing device. For example, the substrate processing device used in the embodiment of the present invention may have a maximum RF power that can be applied to the antenna (610) of 900 W, and a maximum of 3 W/cm ² based on the unit area of the substrate. Accordingly, the first hydrogen plasma is formed by applying RF power of 800 W to 900 W to the antenna (610) or applying RF power of 2.66 W/cm ² to 3 W/cm ² per unit area based on the substrate (10).

When RF power of 800 W to 900 W is applied to the antenna (610) or RF power of 2.66 W/cm ² to 3 W/cm ² per unit area based on the substrate (10) is applied to form the first hydrogen plasma, separation of silicon (Si) from the silicon-containing film (21) can be suppressed or prevented. That is, even if the temperature inside the chamber (100) is controlled to a low temperature of 300° C. to 600° C., separation of silicon (Si) from the silicon-containing film (21) by the first hydrogen plasma can be suppressed or prevented. Accordingly, an amorphous silicon carbide film (22) with few or no defects can be formed.

When the step of forming the first hydrogen plasma while injecting the carbon-containing gas is completed, the second hydrogen plasma is formed inside the chamber (100). To this end, RF power is applied to the antenna (610) using the power supply unit (620) while injecting the hydrogen-containing gas into the inside of the chamber (100). More specifically, the hydrogen-containing gas contained in the hydrogen gas supply unit (430) is supplied to the second gas injection unit (300b) through the second connection pipe (460b) and the second transfer pipe (450b). In addition, the discharge gas contained in the discharge gas supply unit (440), for example, argon (Ar) gas, can be supplied to the second gas injection unit (300b). Accordingly, the hydrogen-containing gas and the discharge gas are injected from the second gas injection unit (300b). That is, the hydrogen-containing gas and the discharge gas are injected into the inside of the chamber (100). And, RF power is applied to the antenna (610) using the power supply (620). The RF power applied in the second hydrogen plasma forming step may be the same as the RF power applied in the first hydrogen plasma forming step. That is, the RF power applied to the antenna (610) in the second hydrogen plasma forming step may be 800 W to 900 W, or 2.66 W/cm ² to 3 W/cm ² per unit area of the substrate. In addition, the time for forming the second hydrogen plasma may be longer than the time for forming the first hydrogen plasma. That is, the time for forming the first hydrogen plasma while injecting the carbon-containing gas may be 1 to 3 seconds, and the time for forming the second hydrogen plasma may be 10 to 20 seconds.

When the second hydrogen plasma is formed, the amorphous silicon carbide film (22) can be crystallized. That is, the second hydrogen plasma crystallizes the silicon carbide film (22), thereby forming a crystallized silicon carbide film (20).

Meanwhile, in the past, the temperature inside the chamber (100) was heated to a high temperature of 1000°C or higher to crystallize an amorphous silicon carbide film (21). However, when an amorphous silicon carbide film is crystallized under conditions of a high temperature of 1000°C or higher, a large number of defects occur in the silicon carbide film (20). Accordingly, when the crystallized silicon carbide film (20) is used as a conductive film, there is a problem that leakage current occurs due to the silicon carbide film (20).

On the other hand, in the embodiment of the present invention, the amorphous silicon carbide film (22) can be crystallized by forming the second hydrogen plasma after forming the amorphous silicon carbide film (22). That is, the amorphous silicon carbide film (22) can be crystallized using the second hydrogen plasma without heating the temperature inside the chamber (100) to a high temperature of 1000° C. or higher. In other words, by forming the second hydrogen plasma, the amorphous silicon carbide film (22) can be crystallized even when the chamber (100) is controlled to a low temperature of 300° C. to 600° C. Accordingly, a crystalline silicon carbide film (20) with few or no defects can be formed.

In forming the second hydrogen plasma, RF power is applied to the antenna (610). At this time, RF power of 800 watts (W) to 900 watts (W) is applied to the antenna (610), or 2.66 W/cm ² to 3 W/cm ² per unit area based on the substrate (10).

Meanwhile, if the RF power applied to the antenna (610) is less than 800 W or the RF power per unit area of the substrate (10) is less than 2.66 W/cm ² , the amorphous silicon carbide film (22) may not crystallize or the crystallization rate may decrease. Therefore, the RF power applied to the antenna (610) is set to 800 W or more or the RF power per unit area of the substrate (10) is set to 2.66 W/cm ² or more.

The maximum RF power that can be applied may vary depending on the substrate processing device. For example, the substrate processing device used in the embodiment of the present invention may have a maximum RF power that can be applied to the antenna (610) of 900 W, and a maximum of 3 W/cm ² based on the unit area of the substrate (10). Accordingly, the second hydrogen plasma is formed by applying RF power of 800 W to 900 W to the antenna (610) or applying RF power of 2.66 W/cm ² to 3 W/cm ² per unit area based on the substrate (10).

In this way, by applying RF power of 800 W to 900 W to the antenna (610) or RF power of 2.66 W/cm ² to 3 W/cm ² per unit area based on the substrate (10) to form the second hydrogen plasma, the amorphous silicon carbide film (22) can be crystallized. That is, even if the temperature inside the chamber (100) is controlled to a low temperature of 300° C. to 600° C., the amorphous silicon carbide film (22) can be crystallized by the second hydrogen plasma. Accordingly, a crystalline silicon carbide film (20) with few or no defects can be formed.

Thereafter, purge gas is supplied into the interior of the chamber (100) and the exhaust unit (800) is operated to purge the chamber (100) (second purge).

The process including the silicon-containing gas injection step, the first purge step, the carbon-containing gas step (the first hydrogen plasma formation step), the second hydrogen plasma formation step, and the second purge step as described above can be one silicon carbide film formation cycle (CY). That is, the cycle (CY) for forming the silicon carbide film can include 'silicon-containing gas injection step - first purge step - carbon-containing gas injection step (the first hydrogen plasma formation step) - second hydrogen plasma formation step - second purge step'. Then, the silicon carbide film formation cycle (CY) can be performed once or continuously one or more times to form a silicon carbide film (20) having a target thickness.

In the above, it has been described that carbon-containing gas and hydrogen-containing gas are supplied and injected separately in the carbon-containing injection step. However, a gas containing both carbon and hydrogen may be supplied into the interior of the chamber (100). To this end, the substrate processing device may be provided with a mixed gas storage unit that supplies a mixed gas containing carbon and hydrogen, and the mixed gas storage unit may be connected to at least one of the first gas injection unit (300a) and the second gas injection unit (300b). Accordingly, the mixed gas of the mixed gas storage unit may be injected into the interior of the chamber (100) through at least one of the first and second gas injection units (300a, 300b). At this time, the mixed gas containing carbon and hydrogen may be, for example, methane (CH ₄ ) gas. Of course, the mixed gas containing carbon and hydrogen is not limited to the above-described example, and various gases containing carbon and hydrogen may be applied.

Figures 5 (a) to (d) are process diagrams conceptually illustrating a method of forming a silicon carbide film on a substrate using a method according to a second embodiment of the present invention.

The silicon carbide film formation cycle (CY) according to the second embodiment may further include a hydrogen plasma formation step (hereinafter, referred to as a third plasma formation step) between the silicon-containing gas injection step and the carbon-containing gas injection step, compared to the first embodiment. More specifically, the silicon carbide film formation cycle (CY) according to the second embodiment may further include a step of forming a third hydrogen plasma between the silicon-containing gas injection step and the first purge step. That is, the silicon carbide film formation cycle (CY) according to the second embodiment may include 'silicon-containing gas injection step - third hydrogen plasma formation step - first purge step - carbon-containing gas injection step (first hydrogen plasma formation step) - second hydrogen plasma formation step - second purge step'. At this time, at least one of the first purge step and the second purge step may be omitted in the silicon carbide film formation cycle (CY). And, the silicon carbide film formation cycle (CY) as described above can be performed n times (n: 1, 2, 3, …). That is, the step of forming the silicon carbide film can include one (n=1) or two or more (n ≥ 2) silicon carbide film formation cycles (CY). Here, two or more times can mean multiple times.

Meanwhile, the silicon-containing gas may contain impurities other than silicon (Si), and thus the silicon-containing film (21) may contain impurities. In addition, the quality of the silicon carbide film (20) may deteriorate due to the impurities contained in the silicon-containing film (21).

Therefore, in the embodiment, after forming a silicon-containing film (21) on a substrate (10) by spraying a silicon-containing gas, a third hydrogen plasma is formed to remove impurities from the silicon-containing film (21). When hydrogen plasma (third hydrogen plasma) is formed after forming the silicon-containing film (21), the silicon-containing film (21) is exposed to the hydrogen plasma, and at this time, the silicon-containing film (21) and the hydrogen plasma react, so that impurities can be separated or removed from the silicon-containing film (21). Therefore, the quality of the silicon carbide film (20) can be improved.

The substrate processing device for forming the silicon carbide film (20) is not limited to the first substrate processing device illustrated in Fig. 4. The silicon carbide film (20) may be formed using the substrate processing devices of other embodiments illustrated in Figs. 6 to 13.

FIG. 6 is a schematic drawing of a substrate processing device according to another embodiment of the present invention capable of forming a silicon carbide film. FIG. 7 is a schematic perspective view of a substrate supporter in a substrate processing device according to another embodiment. FIG. 8 is a plan view of a substrate supporter in a substrate processing device according to another embodiment. FIG. 9 is a schematic side sectional view of a spraying unit in a substrate processing device according to another embodiment. FIG. 10 is a schematic bottom view of a spraying unit in a substrate processing device according to another embodiment. FIG. 11 is a schematic side sectional view of a modified example of a spraying unit in a substrate processing device according to another embodiment. FIG. 13 is a schematic side sectional view of a modified example of a spraying unit in a substrate processing device according to another embodiment.

Hereinafter, a substrate processing device of another embodiment capable of forming a silicon carbide film will be described with reference to FIGS. 6 to 13. At this time, the drawing symbols shown in FIGS. 6 to 13 are drawing symbols shown separately from those shown in FIGS. 1 to 5 described above.

Referring to Fig. 6, a substrate processing device (1) of another embodiment performs a processing process on a substrate (10). The substrate processing device (1) of another embodiment can perform a deposition process of depositing a thin film on the substrate (10).

A substrate processing device (1) of another embodiment may include a chamber (2), a substrate support member (3), and a spray member (4). In addition, although not shown, a heater (not shown) capable of controlling the temperature inside the chamber (2) may be installed in at least one of the substrate support member (3) and the chamber (2). In addition, a turbo molecular pump (TMP, 100-1) may be installed in an exhaust member (not shown).

Referring to FIG. 6, the chamber (2) can provide a processing space (PS). In the processing space (PS), a processing process for the substrate (10) can be performed. The processing space (PS) can be arranged inside the chamber (2). An exhaust port (not shown) for exhausting gas from the processing space (PS) can be coupled to the chamber (2), and a turbo molecular pump (TMP, 100-1) can be additionally coupled. The substrate support unit (3) and the injection unit (4) can be arranged inside the chamber (2).

Referring to FIGS. 6 to 9, the substrate support member (3) supports the substrate (10). The substrate support member (3) can support one substrate (10), and furthermore, the substrate support member (3) can support a plurality of substrates (10). For example, the substrate support member (3) can support one to six substrates (10). Accordingly, the substrate processing device (1) of another embodiment can perform a processing process on one substrate (10) or a plurality of substrates (10) at a time. The substrate support member (3) can be coupled to the chamber (2). The substrate support member (3) can be placed inside the chamber (2).

The above substrate support member (3) may include a support surface (31). The support surface (31) may be a surface of the substrate support member (3) arranged to face the injection member (4). When the substrate support member (3) is arranged below the injection member (4), the support surface (31) may correspond to an upper surface of the substrate support member (3). The substrates (10) may be supported on the support surface (31).

The substrate support member (3) can support the substrates (10) in an outer region (33) disposed outside the central region (32). The outer region (33) can be disposed to surround the central region (32). Accordingly, the central region (32) can be disposed inside the outer region (33). When the central region (32) is formed in a circular shape, the outer region (33) can be formed in a circular ring shape surrounding the central region (32). The substrates (10) can be disposed to be spaced apart from each other along the outer region (33). In this case, the substrates (10) can be supported on the support surface (31) to be spaced apart from each other at the same angle with respect to the central axis (30) of the substrate support member (3) in the outer region (33). When the substrate support member (3) is rotated during the above processing, the substrate support member (3) can be rotated around the central axis (30). When the support surface (31) is formed in a circular shape, the central axis (30) can correspond to the center of the support surface (31). Meanwhile, since the substrates (10) are supported on the support surface (31) in the outer region (33), the substrates (10) are not positioned in the central region (32). When the central region (32) is formed in a circular shape, the diameter of the central region (32) can be implemented to be larger than the diameter (D, illustrated in FIG. 8) of the substrate (10) and smaller than twice the diameter (D) of the substrate (10). The diameter of the central region (32) can also be implemented to be smaller than the diameter (D) of the substrate (10).

The gas storage unit (40a) stores gas and temporarily supplies the gas to the injection unit (4). In addition, the gas storage unit (40a) may be a pile-up tank. The process gas is temporarily stored in the gas storage unit (40a), and the temporarily stored process gas can be instantly injected into the process space (PS) through the injection unit (4). That is, the gas storage unit (40a) stores gas for forming a silicon carbide film (20) according to embodiments of the present invention and instantly increases the gas injection flow rate to supply it to the injection unit (4). The gas storage units for the source gas and the reactant gas may be separated, respectively.

In Fig. 6, one gas storage unit (40a) is illustrated, but a plurality of gas storage units may be provided. That is, the substrate processing device of another embodiment may include a gas storage unit in which a silicon-containing gas (source gas) is stored, a gas storage unit in which a carbon-containing gas (reactant gas) is stored, a gas storage unit in which a hydrogen-containing gas is stored, and a gas storage unit in which a discharge gas is stored. A gas constant supply unit (not illustrated) capable of constantly supplying gas may be provided at the top of the gas storage unit. In addition, the substrate processing device of another embodiment may further include a gas storage unit in which a mixed gas containing carbon (C) and hydrogen (H) is stored, and a gas storage unit in which a purge gas is stored.

Referring to FIGS. 6 to 13, the injection unit (4) injects gas toward the substrate support unit (3). This injection unit (4) may be installed inside the chamber (2) so as to inject gas into the inside of the chamber (2). The injection unit (4) may inject gas toward the support surface (31). The injection unit (4) may be connected to a gas storage unit (40a). In this case, the injection unit (4) may inject gas supplied from the gas storage unit (40a) toward the substrate support unit (3). That is, the injection unit (4) injects a silicon-containing gas, a carbon-containing gas, a hydrogen-containing gas, and a discharge gas provided from the gas storage unit (40a) in which each gas is stored toward the substrate support unit (3). In addition, the injection unit (4) may inject a mixed gas containing carbon and hydrogen, a purge gas, It can be sprayed toward the substrate support part (3).

The above-described injection unit (4) may be arranged inside the chamber (2). The injection unit (4) may be arranged to face the substrate support unit (3). The injection unit (4) may be arranged on the upper side of the substrate support unit (3). The processing space (PS) may be arranged between the injection unit (4) and the substrate support unit (3). The injection unit (4) may be coupled to a lid (not shown). The lid may be coupled to the chamber (2) so as to cover the upper portion of the chamber (2).

The above-described injection unit (4) can inject gas only toward the outer region (33). In this case, the injection unit (4) is implemented so as not to inject gas toward the central region (32). That is, the injection unit (4) can inject gas toward the outer region (33) excluding the central region (32). Accordingly, the substrate processing device (1) of another embodiment is implemented so as not to inject gas toward a portion of the support surface (31) where the substrates (10) are absent (i.e., the central region (32)), and to inject gas only toward a portion of the support surface (31) where the substrates (10) are present (i.e., the outer region (33)).

Accordingly, the substrate processing device (1) of another embodiment can reduce the amount of gas that flows to the central region (32) where the substrate (10) is absent and is not involved in the processing process and is wasted. Accordingly, the substrate processing device (1) of another embodiment can reduce operating costs through the reduction in the amount of gas that is wasted. In addition, when forming a silicon carbide film (20) using the substrate processing device (1) of another embodiment, the manufacturing cost required to manufacture the silicon carbide film (20) can be reduced.

In addition, since the substrate processing device (1) of another embodiment is implemented to intensively inject gas toward the outer region (33) where the substrates (10) are, the flow rate of gas that flows to the outer region (33) where the substrates (10) are and participates in the processing process can be increased. Accordingly, the substrate processing device (1) of another embodiment can improve the quality of the substrate (10) on which the processing process is performed.

The above-described injection unit (4) can inject the same gas to all of the outer regions (33). When performing the treatment process using a plurality of gases, the injection unit (4) can sequentially repeat the injection of the same gas to all of the outer regions (33) to perform the treatment process. In this case, the injection unit (4) can perform the treatment process in a time-divided deposition (TSD) manner in which the plurality of gases are injected by dividing time. For example, when performing the treatment process using a silicon-containing gas, a carbon-containing gas, and a hydrogen-containing gas, the injection unit (4) can inject the carbon-containing gas and the hydrogen-containing gas to all of the outer regions (33) after injecting the silicon-containing gas to all of the outer regions (33) and then stopping the injection of the silicon-containing gas. In addition, the hydrogen-containing gas can be injected to all of the outer regions (33) while stopping the injection of the carbon-containing gas.

The above-described injection unit (4) can be connected to a power supply unit (40b). The power supply unit (40b) can apply plasma power to the injection unit (4). For example, the plasma power supply can be RF power. Using the plasma power supplied from the power supply unit (40b), plasma can be generated inside the chamber (2). For example, plasma can be generated inside the injection unit (4) connected to the power supply unit (40a), and the generated plasma can be injected to the lower side of the injection unit (4). In this way, when plasma is generated inside the injection unit (4), plasma can be generated only in a portion of the injection unit (4) corresponding to the outer region (33).

As another example, the injection unit (4) may be used as the first electrode and the substrate support unit (3) may be used as the second electrode to generate plasma between the injection unit (4) and the substrate support unit (4). That is, the injection unit (4) may be used to inject hydrogen-containing gas downward, and by applying RF power to the injection unit (4), the electric potential between the injection unit (4) and the substrate support unit (3) may be used to generate hydrogen plasma between the injection unit (4) and the substrate support unit (3). At this time, the injection unit (4) may further inject a discharge gas to the hydrogen-containing gas H. Here, the space between the injection unit (4) and the substrate support unit (4) may be a processing space (PS) of the chamber (2).

In this way, since the plasma is generated inside the chamber (2), the plasma is a direct plasma. That is, it is not a remote plasma that supplies plasma generated outside the chamber (2) to the inside of the chamber (2), but a direct plasma that generates plasma inside the chamber (2).

A substrate processing device (1) of another embodiment can further improve the quality of a substrate (10) on which a processing process has been performed by performing crystallization, film densification, impurity removal, etc. on a thin film formed on each of the substrates (10) using plasma. When plasma is generated in the processing space (PS), the plasma can be generated only in a portion of the processing space (PS) corresponding to the outer region (33).

The above-described injection unit (4) may inject a silicon-containing gas only toward the outer region (33), and then inject a carbon-containing gas and a hydrogen-containing gas only toward the outer region (33), or may inject a mixed gas containing carbon and hydrogen. In this case, the substrate processing device (1) of another embodiment may be implemented to form a thin film on the substrate (10) by an atomic layer deposition (ALD) method. At this time, the film (thin film) formed on the substrate using the substrate processing device (1) of another embodiment may be a crystalline silicon carbide film (20). The above-described injection unit (4) may inject a silicon-containing gas toward the entire surface (31) of the support surface (31) belonging to the outer region (33), and then inject a carbon-containing gas and a hydrogen-containing gas.

Accordingly, the substrate processing device (1) of another embodiment can be implemented so that a thin film is deposited on all of the substrates (10) disposed in the outer region (33) by a reaction using a carbon-containing gas and a hydrogen-containing gas after the source material of the silicon-containing gas is adsorbed onto all of the substrates (10) disposed in the outer region (33). Therefore, the substrate processing device (1) of another embodiment can reduce the processing time required until the processing process is performed on all of the substrates (10) disposed in the outer region (33), and thus increase the productivity of the substrates (10) on which the processing process is completed. In addition, the substrate processing device (1) of another embodiment can reduce the deviation of the processing conditions between the substrates (10) disposed in the outer region (33), and thus improve the uniformity of quality between the substrates (10) on which the processing process is performed.

The above-described injection unit (4) may further inject purge gas. For this purpose, the substrate processing device (1) of another embodiment may further include a gas storage unit in which a purge gas is stored. In addition, the injection unit (4) may sequentially inject a silicon-containing gas, a purge gas, a carbon-containing gas, a hydrogen-containing gas, a hydrogen-containing gas, and a purge gas only toward the outer region (33). The purge gas may purge the silicon-containing gas remaining in the processing space (PS), or may purge the carbon-containing gas and the hydrogen-containing gas remaining in the processing space (PS). The purge gas is not involved in the processing process, and an inert gas such as argon (Ar) may be used, for example. By using the purge gas, the substrate processing device (1) of another embodiment can further improve the quality of a thin film formed on the substrate (10) by an atomic layer deposition (ALD) method.

The above injection unit (4) may include a first gas path (4a) and a second gas path (4b).

The first gas path (4a) above is for injecting the first gas. One side of the first gas path (4a) can be connected to the gas storage unit (40a) through a pipe, a hose, a gas block, or the like. The other side of the first gas path (4a) can be connected to the processing space (PS). Accordingly, the first gas supplied from the gas storage unit (40a) can flow along the first gas path (4a) and then be injected into the processing space (PS) through the first gas path (4a). The first gas path (4a) can function as a path for the first gas to flow and also as an injection port for injecting the first gas into the processing space (PS).

The above second gas path (4b) is for injecting the second gas. The second gas and the first gas may be different gases. For example, when the first gas is a silicon-containing gas, the second gas may be a carbon-containing gas. As another example, the first gas may be a hydrogen-containing gas and the second gas may be a carbon-containing gas. One end of the second gas path (4b) may be connected to the gas storage unit (40a) through a pipe, a hose, a gas block, or the like. The other end of the second gas path (4b) may be connected to the processing space (PS). Accordingly, the second gas supplied from the gas storage unit (40a) may flow along the second gas path (4b) and then be injected into the processing space (PS) through the second gas path (4b). The above second gas path (4b) can function as a path for the second gas to flow and also as an injection port for injecting the second gas into the processing space (PS).

The second gas path (4b) and the first gas path (4a) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the gas storage unit (40a) to the second gas path (4b) may be injected into the processing space (PS) without passing through the first gas path (4a). The first gas supplied from the gas storage unit (40a) to the first gas path (4a) may be injected into the processing space (PS) without passing through the second gas path (4b). In this case, the second gas path (4b) may inject the second gas only toward the outer region (33). The first gas path (4a) may inject the first gas only toward the outer region (33).

The above injection unit (4) may include a second plate (41) and a plurality of third openings (411). Each of the source gas and the reactant gas or the mixed gas injected from above through the plurality of third openings (411) may be injected to the substrate (10) through the third opening (411), and the gas that is converted into plasma by applying RF power may be injected to the substrate (10) through the third opening (411).

The second plate (41) may be arranged on the upper side of the substrate support member (3), and the first plate (42) may be arranged on the second plate (41). The second plate (41) may be arranged spaced apart from the substrate support member (3) upwardly. The bottom surface of the second plate (41) facing the substrate support member (3) may be formed to have the same area as the support surface (31). The bottom surface of the second plate (41) may also be formed to have a larger area than the support surface (31).

The third openings (411) above may be formed in the second plate (41). The third openings (411) may allow gas to pass through. The gas may pass through the second plate (41) through the third openings (411) and be sprayed toward the substrate support member (3). The third openings (411) may be formed only in the first passing region (41a, illustrated in FIG. 10) corresponding to the outer region (33). Alternatively, the gas may be sprayed to both the outer region (33) and the central region (32). Accordingly, the spraying unit (4) may be implemented to spray gas only toward the outer region (33) by using the third openings (411). The third openings (411) above may be arranged spaced apart from each other within the first passage area (41a), and the third openings (411) may be arranged in a zigzag manner with the gas injection holes of the first plate (42). The zigzag arrangement may mean that the gas holes do not face each other and are arranged in different positions.

The first plate (42) may be formed with a plurality of first openings (421a) through which a source gas containing silicon is injected and a plurality of second openings (421b) through which a reactant gas containing carbon is injected.

The first openings (421a) may be formed by vertically penetrating the first plate (42). The first openings (421a) may belong to the first gas passage (4a). Accordingly, the first openings (421a) may allow the first gas to pass through. The first openings (421a) may be formed only in the first passage area (41a). The first gas may be a source gas.

The third opening (411) of the second plate (41) may be arranged in a zigzag manner so as not to face the first openings (421a) and the second openings (421b) of the first plate (42). The zigzag arrangement may mean that the gas holes do not face each other and are arranged in different positions. The source gas or reactant gas injected from the first openings (421a) and the second openings (421b) of the first plate (42) may not pass directly into the third opening (411) of the second plate (41), but may pass through the upper surface of the second plate (41) and then into the third opening (411). Plasma may be formed by utilizing the potential difference between the second plate (41) and the first plate (42). An RF power source (40b) can be connected to either the second plate (41) or the first plate (42).

One side of each of the second openings (421b) may be formed by penetrating the interior of the first plate (42). The other side of each of the second openings (421b) may be formed by penetrating the side surface of the first plate (42) without penetrating the upper surface of the first plate (42). The second openings (421b) may be formed in a gundrill manner. The second openings (421b) may belong to the second gas path (4b) that injects a reactant gas including carbon. Accordingly, the second openings (421b) may allow the second gas to pass. The first openings (431a) and the second openings (421b) may be formed only in the first passage area (41a). In the first passage area (41a), the second openings (411b) and the first openings (411a) can be arranged spaced apart from each other. The first openings (431a) and the second openings (411b) can be arranged entirely in the first passage area (41a) so that gas can be sprayed toward all of the substrates (10) arranged in the outer area (33), so that gas can be sprayed to the entire surface. The first openings (411a) can be arranged entirely in the first passage area (41a) so that gas can be sprayed toward all of the substrates (10) arranged in the outer area (33).

It may include the second plate (41) and the first blocking member (412).

The second plate (41) can block the passage of gas. The first blocking member (412) can be arranged in the first blocking region (41b, illustrated in FIG. 9) corresponding to the central region (32). Accordingly, the injection unit (4) can be implemented to block the injection of gas toward the central region (32) by using the first blocking member (412) and to inject gas only toward the outer region (33) by using the third openings (411). The third openings (411), the first opening (431a), and the second openings (411b) may not be formed in the first blocking member (412). The first blocking region (41b) and the central region (32) can be formed to have the same shape and size. The first blocking area (41b) may be arranged on the inner side of the first pass area (41a). The first pass area (41a) may be arranged on the outer side of the first blocking area (41b) so as to surround the first blocking area (41b). When the first blocking area (41b) is formed in a circular shape, the first pass area (41a) may be formed in a circular ring, donut, or tube shape surrounding the first blocking area (41b).

Referring to Fig. 11, the injection unit (4) may include a first plate (42) and a plurality of gas holes (421).

The first plate (42) may be arranged on the upper side of the second plate (41). The first plate (42) may be arranged spaced apart from the second plate (41) upwardly. The lower surface of the first plate (42) facing the second plate (41) may be formed flat. The lower surface of the first plate (42) may be formed to have the same area as the support surface (31). The lower surface of the first plate (42) may be formed to have a larger area than the support surface (31).

The above gas holes (421) may be formed in the first plate (42). The gas holes (421) may allow gas to pass through. The gas may pass through the first plate (42) through the gas holes (421) and be sprayed toward the second plate (41). When viewed from above or below, the gas hole (421) of the first plate (42) and the third opening (411) of the second plate (41) do not have positions that match.

In another embodiment, the gas holes (421) may be formed only in the second passage area (421a, illustrated in FIG. 9) corresponding to the outer region (33). Accordingly, the injection unit (4) may be implemented to inject gas only toward the outer region (33) by using the gas holes (421) and the third openings (411). In this case, the gas may pass between the first plate (42) and the second plate (41). Accordingly, the gas may pass through the gas holes (421) and the third openings (411) and be injected only toward the outer region (33). The gas holes (421) may be arranged to be spaced apart from each other within the second passage area (42a). The second pass area (42a), the first pass area (41a), and the outer area (33) can be formed to have the same shape and size.

Plasma can be formed between the second plate (41) and the first plate (42). The second plate (41) can be used as a first electrode, and the first plate (42) can be used as a second electrode, and an RF power source can be connected to the first electrode or the second electrode. That is, plasma can be formed in the space between the second plate (41) and the first plate (42) by utilizing the potential difference between them.

When the first gas and the second gas are sprayed onto the first plate (42), the first gas and the second gas can be sprayed toward the lower substrate through the third opening (411) of the second plate (41).

The second plate (41) and the first plate (42) have a third opening (411) or gas hole (421) formed without a blocking area in the center so that gas can be sprayed to both the front surfaces of the second plate (41) and the first plate (42). In addition, the second plate (41) having a plurality of third openings (411) formed in the first plate (42) including the first opening (421a) and the second opening (421b), electrically insulated from the first plate (42), spaced apart from the first plate (42), and arranged in an alternating manner with the first opening (421a) and the second opening (421b) can be accommodated in a chamber (2) including a turbo molecular pump (TMP, 100-1). In addition, the chamber (2) including the turbo molecular pump (TMP, 100-1) can be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less. The first opening (421a) is connected from a gas storage unit (40a), and one or more gases can be temporarily injected from the gas storage unit to the first opening (421a). The gas storage unit (40a) can include a pile-up tank. The pile-up tank is connected to the first gas path (4a) to fill one or more gases, and the filled gases can be temporarily injected.

The above first plate (42) can include a second blocking member (not shown) on the upper surface of the first blocking member (412) of the second plate (41).

The second blocking member (not shown) can block the passage of gas. The second blocking member (not shown) can be arranged in a second blocking region (not shown) corresponding to the central region (32). In addition, the first blocking member (412) and the second blocking member (not shown) can be connected as one, thereby blocking the space between the second plate (41) and the first plate (42), thereby reducing waste of space. The material blocking the space between the first blocking member (412) and the second blocking member (not shown) located above the first blocking member (412) can be a different material from the second plate (41) and the first plate (42), and can be, for example, a material such as Teflon or quartz. According to the first blocking member (412), the injection unit (4) can be implemented to block the injection of gas toward the central region (32) by using the second blocking member (not shown) and the first blocking member (412), and to inject gas only toward the outer region (33) by using the gas holes (421) and the third openings (411). The gas holes (421) are not formed in the second blocking member (not shown). The second blocking region (not shown), the first blocking region (41b), and the central region (32) can be formed to have the same shape and size. The second blocking region (not shown) can be arranged inside the second passage region (42a). The second pass area (42a) may be arranged on the outside of the second blocking area (not shown) so as to surround the second blocking area (not shown). When the second blocking area (not shown) is formed in a circular shape, the second pass area (42a) may be formed in a circular ring shape or a donut shape surrounding the second blocking area (not shown).

FIG. 12 is a flowchart schematically showing a method of forming a silicon carbide film according to another embodiment of the present invention using a substrate processing apparatus according to another embodiment.

Hereinafter, a method for forming a silicon carbide film according to an embodiment of the present invention using a substrate processing device of another embodiment will be described with reference to FIGS. 3 (a) to (c) and FIGS. 11 to 13. At this time, a description of the purge step is omitted.

First, the temperature inside the chamber (2) is adjusted to 300°C to 700°C using a heater (not shown). Then, the substrate (10) is introduced into the chamber (2) and the substrate (10) is seated (S10). This step (S10) can be performed by seating a plurality of substrates (10) or one substrate (10) on the substrate support member (3). One of the plurality of substrates (10) or one substrate (10) can be seated on the support surface (31) of the substrate support member (3), or the plurality of substrates (10) can be seated on the outer region (33). The step (S10) of seating the substrates can be performed by seating the substrates (10) on the substrate support member (3) using a transport robot (not shown) for transporting the substrates (10).

In the above, it has been described that the substrate (10) is placed on the substrate support member (3) after controlling the temperature inside the chamber (2). However, this is not limited to this, and the temperature inside the chamber (2) may be controlled after controlling the substrate (10) is placed on the substrate support member (3).

Next, a processing process is performed (S20). This step (S20) can be performed by injecting a processing gas toward the substrate (10) and performing a processing process on the substrates (10). When one substrate (10) is installed, the injection unit (4) can inject gas to the entire surface of the substrate (10).

In addition, as another embodiment, the treatment process can be performed on the substrates (10) by having the injection unit (4) inject gas only toward the outer region (33) and not inject gas toward the central region (32).

Accordingly, the flow rate of gas that flows to the central region (32) where there is no substrate (10) and is not involved in the processing process and is wasted can be reduced. Accordingly, by reducing the flow rate of wasted gas, the operating cost can be reduced, thereby contributing to lowering the manufacturing cost of forming a silicon carbide film (20).

In addition, when gas is sprayed toward the front side toward the one substrate having the substrate (10), the one substrate (10) flows toward the front side, thereby increasing the flow rate of the gas involved in the processing process, thereby improving the uniformity of the silicon carbide film (20) formed by performing the processing process.

Here, the width (H) of the outer region (33) may be implemented to be the same as the diameter of the substrate (10) or longer than the diameter of the substrate (10). Accordingly, the step (S20) of performing the processing process may only inject gas toward the outer region (33) having a width (H) greater than the diameter (D) of the substrate (10). Accordingly, for all of the substrates (10) arranged in the outer region (33), the gas is implemented to be injected toward the entire surface of one side of the substrate (10) facing the injection unit (4). Accordingly, the uniformity of the processing process for each of the substrates (10) may be improved.

Here, the step (S20) of performing the above processing process can be performed by injecting an activated gas using plasma. In this case, the injection unit (4) can generate plasma using plasma power applied from the power supply unit (40b) to inject the activated gas only toward the plurality of substrates or one substrate (10). Accordingly, by performing crystallization, film densification, impurity removal, etc. on the thin film formed on each of the substrates (10) using plasma, the quality of the substrate (10) on which the processing process has been performed can be further improved.

Here, the step (S20) of performing the above treatment process may include a step (S21) of injecting a gas containing silicon (source gas), a step (S22) of forming a first hydrogen plasma while injecting a carbon-containing gas, and a step (S23) of forming a second hydrogen plasma.

The step (S21) of injecting the silicon-containing gas (source gas) can be performed by injecting the silicon-containing gas onto the substrates (10) arranged in the outer region (33). This step (S21) can be performed by injecting the silicon-containing gas only toward the outer region (33) to adsorb the source material onto the substrates (10). The step (S21) of injecting the silicon-containing gas can be performed by having the injection unit (4) inject the silicon-containing gas only toward the outer region (33), which is the front surface of one substrate (10) or the front surfaces of a plurality of substrates (10).

The above-described injection unit (4) can inject the silicon-containing gas only toward the substrate (10) through the third openings (411). The above-described injection unit (4) can also inject the silicon-containing gas only through the first openings (421a) among the third openings (411). The above-described injection unit (4) can also inject the silicon-containing gas through the first gas path (4a).

In the step (S22) of forming the first hydrogen plasma while injecting the carbon-containing gas, the method of injecting the carbon-containing gas will first be described. Injecting the carbon-containing gas can be accomplished by injecting the carbon-containing gas onto the substrate (10). This step can be accomplished by injecting the carbon-containing gas toward the substrate (10) to form a film (or thin film) on the substrate (10).

In this case, through the step of injecting the silicon-containing gas (S21), the source material adsorbed on the substrate (10) and the carbon-containing gas injected through the step of injecting the carbon-containing gas (S22) react, thereby forming a silicon carbide film (22) on the substrate (10). The silicon carbide film (22) formed at this time may be amorphous. The step of injecting the carbon-containing gas (S22) may be performed by having the injection unit (4) inject the carbon-containing gas only toward the substrate (10). In this case, the injection unit (4) may inject the carbon-containing gas only toward the outer region (33) through the third openings (411).

The step (S22) of forming a first hydrogen plasma while injecting a carbon-containing gas includes a step of injecting a hydrogen-containing gas. The step of injecting the hydrogen-containing gas can be performed by injecting the hydrogen-containing gas onto the substrate (10). The injection unit (4) can inject the hydrogen-containing gas through the third openings (411). Plasma can be formed between the first plate (42) and the second plate (41). The formed hydrogen-containing gas plasma can also inject the hydrogen-containing gas onto the substrate (10) through the third openings (411). The hydrogen-containing gas injection can be blocked by the first blocking member (412). In this way, when injecting the hydrogen-containing gas using the injection unit (4), the discharge gas can be injected together.

The step (S21) of spraying the silicon-containing gas may be performed by spraying the silicon-containing gas toward the silicon substrate (10). The step (S22) of spraying the carbon-containing gas and the hydrogen-containing gas may be performed by spraying the carbon-containing gas and the hydrogen-containing gas toward the entire surface of the substrate (10). The step (S21) of spraying the silicon-containing gas and the step (S22) of spraying the carbon-containing gas and the hydrogen-containing gas may be performed sequentially. Accordingly, it may be implemented so that an amorphous silicon carbide film (22) is deposited by a reaction using the carbon-containing gas and the hydrogen-containing gas after the source material of the silicon-containing gas is adsorbed onto the entirety of one or more substrates (10). Accordingly, since the processing time required until the processing process for the entirety of the substrate (10) can be reduced, the productivity of the substrate (10) on which the processing process has been completed can be increased. Plasma is formed by applying RF power to either the second plate (41) (first electrode) or the first plate (42) (second electrode) using a power supply (40b). At this time, the RF power may be 800 W to 900 W. As another example, the RF power applied to either the second plate (41) (first electrode) or the first plate (42) (second electrode) may be 1.13 W/cm ² to 1.27 W/cm ² per unit area of the substrate (10).

When RF power is applied to either the second plate (41) (first electrode) or the first plate (42) (second electrode), a first hydrogen plasma is formed in the buffer space (43). And, by forming hydrogen plasma (first plasma) while injecting carbon-containing gas and hydrogen-containing gas in this way, even if the temperature inside the chamber (2) is controlled to a low temperature of 300° C. to 700° C., separation of silicon (Si) from the silicon-containing film (21) can be suppressed or prevented. Accordingly, an amorphous silicon carbide film (22) with few or no defects can be formed.

Here, since the first and second plates (41, 42) are installed inside the chamber (2), applying RF power to either of the first and second plates (41, 42) may mean applying RF power to the chamber (2).

Next, a second hydrogen plasma is formed inside the chamber (2) (S23). To this end, a hydrogen-containing gas is injected into the inside of the chamber (2) using the injection unit (4), and at this time, a discharge gas may be injected together. While the hydrogen-containing gas and the discharge gas are injected into the inside of the chamber (2) using the injection unit (4), RF power is applied to either the second plate (41) (first electrode) or the first plate (42) (second electrode). At this time, the RF power may be 800 W to 900 W. As another example, the RF power applied to either the second plate (41) (first electrode) or the first plate (42) (second electrode) may be 1.13 W/cm ² to 1.27 W/cm ² per unit area of the substrate (10).

In this way, when RF power is applied to either the second plate (41) (first electrode) or the first plate (42) (second electrode) to form a second hydrogen plasma, the amorphous silicon carbide film (22) can be crystallized. That is, even if the temperature inside the chamber (2) is controlled to a low temperature of 300°C to 700°C, the amorphous silicon carbide film (22) can be crystallized by the second hydrogen plasma. Accordingly, a crystalline silicon carbide film (20) with few or no defects can be formed.

A substrate processing device of another embodiment may include a chamber (2), a substrate support member (3), and a spray member (4), as shown in FIG. 13. In addition, the substrate processing device (1) may include a heater (not shown) that heats the interior of the chamber. At this time, the heater may be connected to the chamber (2) or installed inside the chamber (2).

The substrate support member (3) supports the substrate (10). The substrate support member (3) may support one substrate (10) or may support multiple substrates (10). When multiple substrates (10) are supported by the substrate support member (3), a processing process for multiple substrates (10) can be performed at one time. The substrate support member (3) can be coupled to the chamber (2). The substrate support member (3) can be placed inside the chamber (2), and multiple substrates (10), six substrates, can be placed.

The injection unit (4) injects gas toward the substrate support unit (3). The injection unit (4) may be connected to a gas storage unit (40a). Accordingly, the injection unit (4) may inject gas supplied from the gas storage unit (40a) toward the substrate support unit (3). The injection unit (4) may be coupled to the chamber (2) and may be installed so as to be located inside the chamber (2). The injection unit (4) may be arranged to face the substrate support unit (3). The processing space (PS) may be arranged between the injection unit (4) and the substrate support unit (3). The injection unit (4) may also be coupled to a lid. The lid is coupled to the chamber (2) so as to cover an upper portion of the chamber (2).

The above injection unit (4) may include a first gas path (4a) and a second gas path (4b).

The first gas path (4a) above is for injecting the first gas. One side of the first gas path (4a) can be connected to the gas storage unit (40b) via a pipe, a hose, or the like. The other side of the first gas path (4a) can be connected to the processing space (PS). Accordingly, the first gas supplied from the gas storage unit (40b) can flow along the first gas path (4a) and then be injected into the processing space (PS) through the first gas path (4a). The first gas path (4a) can function as a passage for the first gas to flow and also as an injection port for injecting the first gas into the processing space (PS).

The second gas path (4b) is for injecting the second gas. The second gas and the first gas may be different gases. For example, when the first gas is a silicon-containing gas (i.e., source gas), the second gas may be a carbon-containing gas (i.e., reactant gas) and a hydrogen-containing gas. That is, the silicon-containing source gas may pass through the first gas path (4a), and the carbon-containing gas and the hydrogen-containing gas may pass through the second gas path (4b). As another example, when the first gas is a silicon-containing gas, the second gas may be a mixed gas containing carbon and hydrogen. In this case, the silicon-containing gas may pass through the first gas path (4a), and the mixed gas may pass through the second gas path (4b). Of course, conversely, the second gas may be a silicon-containing gas. In such cases, the first gas may be a carbon-containing gas and a hydrogen-containing gas, or a mixed gas containing carbon and hydrogen.

The second gas path (4b) may have one end connected to the gas storage unit (40a) via a pipe, hose, or the like. The other end of the second gas path (4b) may be connected to the processing space (PS). Accordingly, the second gas supplied from the gas storage unit (40a) may flow along the second gas path (4b) and then be sprayed into the processing space (PS) through the second gas path (4b). The second gas path (4b) may function as a passage for the second gas to flow and as an injection port for spraying the second gas into the processing space (PS). At this time, the second gas supplied from the gas storage unit (40a) flows along the second gas path (4b), and then hits the upper surface of the second electrode (4400) described later, and is sprayed between the holes (4400a). The second gas path (4b) can function as a passage for the second gas to flow and also as an injection port for injecting the second gas into the processing space (PS). This can increase the flow of gas and make the deposition film uniform.

The second gas path (4b) and the first gas path (4a) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the gas storage unit (40a) to the second gas path (4b) may be injected into the processing space (PS) without passing through the first gas path (4a). The first gas supplied from the gas storage unit (40a) to the first gas path (4a) may be injected into the processing space (PS) without passing through the second gas path (4b). The second gas path (4b) and the first gas path (4a) may inject gas toward different parts of the processing space (PS).

Referring to FIG. 14, the injection unit (4) may include a first electrode (4300) and a second electrode (4400). At this time, the first electrode (4300) and the second electrode (4400) are arranged in a vertical direction, and since the first electrode (4300) is located above the second electrode (4400), the first electrode (4300) may be the upper electrode, and the second electrode (4400) may be the lower electrode. In addition, the first electrode (4300) or the upper electrode may be referred to as the first plate, and the second electrode (4400) or the lower electrode may be referred to as the second plate.

The first electrode (4300) may be arranged on the upper side of the substrate support member (3) so as to face the substrate support member (3). The first electrode (4300) may be grounded, thereby functioning as a grounding electrode. The first electrode (4300) may include the first gas path (4a) and the second gas path (4b). Accordingly, the first electrode (4300) may inject the first gas through the first gas path (4a) and the second gas through the second gas path (4b). The first gas path (4a) and the second gas path (4b) may be arranged so as to be spatially separated from each other within the first electrode (4300).

The first gas path (4a) may include a first connection hole (4110) connected to the gas storage unit (40a) and a plurality of first injection holes (4120) connected to the first connection hole (4110). The first connection hole (4110) and the first injection holes (4120) may be formed inside the first electrode (4300). The first injection holes (4120) may have one side connected to the first connection hole (4110) and the other side connected to the processing space (PS). Accordingly, the first gas supplied by the gas storage unit (40a) may flow along the first connection hole (4110) and then be injected into the processing space (PS) through the first injection holes (4120).

The second gas path (4b) may include a second connection hole (4210) connected to the gas storage unit (40a) and a plurality of second injection holes (4220) connected to the second connection hole (4210). The second connection hole (4210) and the second injection holes (4220) may be formed inside the first electrode (4300). The second injection holes (4220) may have one side connected to the second connection hole (4210) and the other side connected to the processing space (PS). Accordingly, the second gas supplied from the gas storage unit (40a) may flow along the second connection hole (4210) and then be injected into the processing space (PS) through the second injection holes (4220).

The first electrode (4300) may include a base member (4300a) that extends in the direction in which the substrate support member (3) extends, and a protruding member (4300b) that extends downwardly from the lower surface of the base member (4300a). The protruding member (4300b) may have a shape that extends from the lower surface of the base member (4300a) in the direction in which the substrate support member (3) is positioned. A plurality of such protruding members (4300b) may be provided, and the plurality of protruding members (4300b) may be arranged to be spaced apart from each other.

When the first electrode (4300) includes a base member (4300a) and a protruding member (4300b), each of the first connection hole (4110), the second connection hole (4210), and the second injection hole (4220) may be provided in the base member (4300a). At this time, the first and second connection holes (411, 421) may have a shape that extends in the direction in which the base member (4300a) extends, for example. In addition, the second injection hole (4220) may extend in the vertical direction, one end may be connected to the second connection hole (4210), and the other end may be connected to the processing space (PS). In addition, the first injection hole (4120) of the first gas path (4a) may be provided to extend from the base member (4300a) to the protruding member (4300b). That is, the first injection hole (4120) can be provided by vertically penetrating the protruding member (4300b), and one end in the extension direction can be connected to the first connection hole (4110) and the other end can be connected to the processing space (PS). Since the first connection hole (4110) is provided in the base member (4300a), the first injection hole (4120) can be connected to the first connection hole (4110) by vertically penetrating a part of the base member (4300a).

The second electrode (4400) may include a hole (4400a) into which a protruding member (4300b) may be inserted. The hole (4400a) may be formed by penetrating the second electrode (4400). This hole (4400a) may function as a passage for passing gas discharged from the first electrode (4300). The number of holes (4400a) may be the same as that of the protruding member (4300b), and the holes (4400a) may be formed at a position facing the protruding member (4300b). In addition, a protruding member (4300b) may be inserted into each of a plurality of holes (4400a). The hole (4400a) may have an inner diameter (or width) greater than the diameter (or width) of the protruding member (4300b), and the vertical length of the hole (4400a) may be smaller than the vertical length of the protruding member (4300b).

When the protruding member (4300b) of the first electrode (4300) is inserted into the hole (4400a) formed in the second electrode (4400), the height of the lower surface of the protruding member (4300b) and the height of the lower surface of the second electrode (4400) are the same. Accordingly, the lower surface of the base member (4300a) and the upper surface of the second electrode (4400) are spaced apart from each other, and the spaced space is communicated with the second injection hole (4220). In addition, when the protruding member (4300b) of the first electrode (4300) is inserted into the hole (4400a) of the second electrode (4400), the outer surface of the protruding member (4300b) is inserted so as to be spaced apart from the inner surface of the second electrode (4400) surrounding the hole (4400a). Accordingly, the outer space of the protruding member (4300b) in the hole (4400a) is connected to the separation space between the lower surface of the base member (4300a) and the upper surface of the second electrode (4400). In addition, the outer space of the protruding member (4300b) in the hole (4400a) is connected to the processing space (PS). Therefore, the gas discharged from the second injection hole (4220) can pass through the hole (4400a) provided in the second electrode (4400) and be injected toward the substrate support member (3). That is, the second gas discharged from the second injection hole (4220) can pass through the separation space between the lower surface of the base member (4300a) and the upper surface of the second electrode (4400) and then pass through the hole (4400a) provided in the second electrode (4400) and be injected toward the lower side of the hole (4400a). At this time, the second gas passes through the hole (4400a) along the outer space of the protruding member (4300b).

The second electrode (4400) is disposed between the first electrode (4300) and the substrate support member (3). The second electrode (4400) may be disposed below the first electrode (4300) while being spaced apart from the first electrode (4300). An insulating member (not shown) for partial insulation may be disposed between the second electrode (4400) and the first electrode (4300). RF power may be applied to the second electrode (4400). When the first electrode (4300) is grounded and the RF power is applied to the second electrode (4400), plasma may be generated. That is, plasma may be generated in the space between the first electrode (4300) and the second electrode (4400). To explain more specifically, plasma can be generated in the gap between the lower surface of the base member (4300a) and the upper surface of the second electrode (4400) and in the hole (4400a). Then, the plasma thus formed can be used to activate gas, and the activated gas can be sprayed into the processing space (PS).

In the above, it has been described that the first electrode (4300) is grounded and RF power is applied to the second electrode (4400) to form plasma. However, the present invention is not limited thereto, and plasma may be formed by applying RF power to the first electrode (4300) and grounding the second electrode (4400). In addition, plasma may be formed by applying a positive (+) voltage to one of the first electrode (4300) and the second electrode (4400) and connecting a negative (-) electrode to the other electrode.

Referring to Fig. 13, the hole (4400a) and the protruding member (4300b) are formed in the entire area of the lower surface of the injection unit (4). In other words, the hole (4400a) and the protruding member (4300b) are formed in the outer area of the central area of the injection unit (4), and the hole (4400a) and the protruding member (4300b) are not formed in the central area, but are formed over the entire area of the injection unit (4). Accordingly, the injection unit (4) can inject gas into the entire area of the substrate support unit (4).

In the above, it has been described that the first electrode (4300) includes a base member (4300a) and a protruding member (4300b) extending downward from the base member (4300a). Accordingly, the height of the lower surface of the protruding member (4300b) is lower than that of the lower surface of the base member (4300a). In this case, the lower surface of the first electrode (4300) is not flat, and its height varies depending on the location.

However, the first electrode (4300) is not limited thereto and may not have a protruding member (4300b). That is, the first electrode (4300) may only have a base member (4300a) and may not have a protruding member (4300b) extending downward from the base member (4300a). In this case, the lower surface of the first electrode (4300) may have a flat shape.

When the lower surface of the second electrode (43) and the upper surface of the first electrode (44) are each formed flat, some of the holes (4400a) are arranged at positions corresponding to the first gas passage (4a), thereby allowing the first gas sprayed from the first gas passage (4a) to pass therethrough. The remaining some of the holes (4400a) are arranged at positions corresponding to the second gas passage (4b), thereby allowing the second gas sprayed from the second gas passage (4b) to pass therethrough. Although not shown, the second electrode (4400) may have the holes (4400a) formed in a smaller number than the sum of the number of first injection holes (4120) of the first gas passage (4a) and the number of second injection holes (4220) of the second gas passage (4b).

And, as illustrated in FIG. 14, when the second electrode (43) includes a plurality of protruding members (4300b), the holes (4400a) may be formed in the second electrode (4400) at positions corresponding to each of the protruding members (4300b). The protruding members (4300b) may protrude toward the substrate support member (3). The protruding members (4300b) may protrude from the lower surface of the first electrode (4300) and be inserted into each of the holes (4400a). The first gas path (4a) may be provided inside each of the protruding members (4300b). In this case, the first injection holes (4120) may be formed such that one side is connected to the first connecting hole (4110) and the other side penetrates the protruding members (4300b).

Hereinafter, with reference to FIGS. 3, 6, 13, and 14, a method of forming a silicon carbide film according to another embodiment of the present invention using a third substrate processing device will be described.

First, the temperature inside the chamber (2) is adjusted to 300°C to 600°C using a heater (not shown). Then, the substrate (10) is brought into the chamber (2), and the substrate (10) is placed on the substrate support member (3).

Next, the silicon-containing gas is injected toward the substrate support member (3) using the injection member (4). To this end, the silicon-containing gas is supplied to the first connecting hole (4110) of the injection member (4) using the gas storage member (40a). Accordingly, the silicon-containing gas supplied to the first connecting hole (4110) passes through the first injection hole (4120) formed in the protruding member (4300b) and is injected toward the substrate support member (3). Accordingly, the silicon-containing gas is adsorbed or deposited on the substrate (10) mounted on the substrate support member (3), and a silicon-containing film (21) is formed as shown in (a) of Fig. 3.

Afterwards, purge gas is supplied into the interior of the chamber (2) to purge the chamber (2) (first purge).

When the first purge is completed, the first hydrogen plasma is generated by injecting a carbon-containing gas using the injection unit (4). To this end, the carbon-containing gas and the hydrogen-containing gas are supplied to the second connection hole (4210) of the injection unit (4) using the gas storage unit (40a). At this time, it is more effective to supply a discharge gas, for example, argon gas, together with the second connection hole (4210). Accordingly, the carbon-containing gas, the hydrogen-containing gas, and the discharge gas supplied to the second connection hole (4210) pass through the second injection hole (4220) and then flow into the gap between the base member (4300a) and the second electrode (4400). That is, the carbon-containing gas, the hydrogen-containing gas, and the discharge gas flow into the gap between the upper surface of the base member (4300a) and the second electrode (4400) and the hole (4400a).

In this way, while the gas passes through the space between the first electrode (4300) and the second electrode (4400), RF power is applied to the second electrode (4400). Accordingly, the gas passing through the space between the first electrode (4300) and the second electrode (4400) is discharged to form plasma, and the plasma may be hydrogen plasma. When the hydrogen plasma is formed, the carbon-containing gas is activated. Then, the activated carbon-containing gas is sprayed toward the substrate (10) disposed below the hole (4400a). Accordingly, the silicon-containing film (21) formed on the substrate (10) and the carbon-containing gas react, and an amorphous silicon carbide film (22) is formed, as shown in (b) of FIG. 3.

In forming the first hydrogen plasma, the RF power applied to the second electrode (4400) is controlled. At this time, the RF power applied to the second electrode (4400) may be 800 W to 900 W. As another example, the RF power applied to the second electrode (4400) may be 2.66 W/cm ² to 3 W/cm ² per unit area of the substrate (10).

Next, a second hydrogen plasma is formed inside the chamber (2). To this end, a hydrogen-containing gas is supplied to the second connection hole (4210) of the injection part (4) using the gas storage part (40a). At this time, it is more effective to supply a discharge gas, for example, argon gas, together with the second connection hole (4210). Accordingly, the hydrogen-containing gas and the discharge gas supplied to the second connection hole (4210) pass through the second injection hole (4220) and then flow into the gap between the base member (4300a) and the second electrode (4400). That is, the hydrogen-containing gas and the discharge gas flow into the gap between the upper surface of the base member (4300a) and the second electrode (4400) and the hole (4400a).

And, while the gas passes through the space between the first electrode (4300) and the second electrode (4400), RF power is applied to the second electrode (4400). Accordingly, the gas passing through the space between the first electrode (4300) and the second electrode (4400) is discharged to form a second hydrogen plasma. The second hydrogen plasma crystallizes the silicon carbide film (22) formed on the substrate (10), thereby forming a crystalline silicon carbide film (20).

The RF power applied to the second electrode to form the second hydrogen plasma may be 800 W to 900 W. As another example, the RF power applied to the second electrode (4400) may be 11.13 W/cm ² to 1.27 W/cm ² per unit area of the substrate (10). At this time, the time for forming the second hydrogen plasma may be longer than the time for forming the first hydrogen plasma. That is, the time for forming the first hydrogen plasma while injecting the carbon-containing gas may be 1 second to 3 seconds, and the time for forming the second hydrogen plasma may be 10 seconds to 20 seconds.

According to embodiments of the present invention, a crystalline silicon carbide film can be formed at a lower temperature than in the prior art. That is, by forming a silicon carbide film by generating hydrogen plasma, a silicon carbide film can be formed at a low temperature. Accordingly, a crystalline silicon carbide film with fewer or no defects can be formed compared to in the prior art. Accordingly, in a semiconductor device including a silicon carbide film, for example, a power semiconductor device, leakage current caused by the silicon carbide film can be suppressed or prevented.

According to embodiments of the present invention, a crystalline silicon carbide film can be formed at a low temperature. That is, a crystalline silicon carbide film with few or no defects can be formed.

Claims (19)

A method for forming a silicon carbide film on a substrate accommodated in a chamber, A step of injecting a silicon (Si) containing gas into the interior of the chamber; A step of forming a first hydrogen plasma inside the chamber while injecting a carbon (C) containing gas into the chamber, thereby forming an amorphous silicon carbide film on the substrate; and A method for forming a silicon carbide film, comprising: a step of forming a second hydrogen plasma inside the chamber to crystallize the amorphous silicon carbide film. In claim 1, The step of forming the first and second hydrogen plasmas includes the step of supplying a hydrogen-containing gas into the interior of the chamber, The above first and second hydrogen plasmas are a method for forming a silicon carbide film, which is a direct plasma formed by discharging a hydrogen-containing gas inside the chamber. In claim 2, A method for forming a silicon carbide film, wherein the step of forming the first and second hydrogen plasmas includes a step of supplying argon (Ar) gas into the interior of the chamber. In claim 2, The step of forming the first and second hydrogen plasmas includes the step of supplying RF power to the chamber, The above RF power is a method for forming a silicon carbide film, wherein the RF power is 800 W to 900 W. In claim 2, The step of forming the first and second hydrogen plasmas includes the step of supplying RF power to the chamber, A method for forming a silicon carbide film, wherein the RF power is 2.66 W/cm ² to 3 W/cm ² per unit area of the substrate. In claim 4 or claim 5, In forming the first and second hydrogen plasmas, A method for forming a silicon carbide film by utilizing the potential difference between a first electrode and a second electrode installed inside the above chamber. In claim 1, A method for forming a silicon carbide film, wherein the time for forming the second hydrogen plasma is longer than the time for forming the first hydrogen plasma. In any one of claims 1 to 7, A method for forming a silicon carbide film, wherein the temperature inside the chamber is controlled to 300°C to 700°C in the step of injecting the silicon (Si)-containing gas, the step of forming an amorphous silicon carbide film, and the step of crystallizing the amorphous silicon carbide film. In any one of claims 1 to 7, A method for forming a silicon carbide film, comprising a step of forming hydrogen plasma inside the chamber between the step of injecting the silicon (Si)-containing gas and the step of forming a first hydrogen plasma while injecting the carbon (C)-containing gas. In any one of claims 1 to 7, It includes at least one of a purge step for purging the inside of the chamber by injecting a purge gas into the inside of the chamber and a pumping step for lowering the pressure inside the chamber by discharging the gas inside the chamber to the outside. A method for forming a silicon carbide film, wherein at least one of the purge step and the pumping step is performed between the step of injecting the silicon (Si)-containing gas and the step of forming the first hydrogen plasma while injecting the carbon (C)-containing gas. In any one of claims 1 to 7, It includes at least one of a purge step for purging the inside of the chamber by injecting a purge gas into the inside of the chamber and a pumping step for lowering the pressure inside the chamber by discharging the gas inside the chamber to the outside. A method for forming a silicon carbide film, wherein at least one of the purge step and the pumping step is performed after the step of forming a second hydrogen plasma inside the chamber to crystallize the amorphous silicon carbide film is completed. A method for forming a silicon carbide film on a substrate accommodated in a chamber including a dome-shaped upper body having an inclined surface whose height increases toward the center in the width direction and a dome-shaped lower body having an inclined surface whose height decreases toward the center in the width direction, A step of injecting a silicon (Si) containing gas into the interior of the chamber using a first gas injection unit connected to the chamber; A step of forming a first hydrogen plasma inside the chamber by injecting a carbon (C)-containing gas into the inside of the chamber using a second gas injection unit connected to the chamber, thereby forming an amorphous silicon carbide film on the substrate; and A method for forming a silicon carbide film, comprising: a step of forming a second hydrogen plasma inside the chamber to crystallize the amorphous silicon carbide film. A method for forming a silicon carbide film on a substrate accommodated in a chamber, A step of injecting a silicon (Si)-containing gas into the interior of the chamber through a first gas path provided in a first electrode installed in the chamber; A step of forming an amorphous silicon carbide film on the substrate by forming a first hydrogen plasma between the first electrode and the second electrode while injecting a carbon (C)-containing gas into the interior of the chamber through a second gas path provided in the second electrode installed in the chamber; and A method for forming a silicon carbide film, comprising: a step of forming a second hydrogen plasma between the first electrode and the second electrode to crystallize the amorphous silicon carbide film. A method for forming a silicon carbide film on a substrate accommodated in a chamber, A step of placing a substrate on an outer area of a support surface of a substrate support member installed inside the chamber; A step of injecting a silicon (Si)-containing gas into the outer area of the support surface by using an opening provided in an injection unit connected to the chamber and provided at a position corresponding to the outer area of the support surface; A step of forming a first hydrogen plasma inside the chamber while injecting a carbon (C)-containing gas into the outer region of the support surface using the opening of the injection unit, thereby forming an amorphous silicon carbide film on the substrate; and A method for forming a silicon carbide film, comprising: a step of forming a second hydrogen plasma inside the chamber to crystallize the amorphous silicon carbide film. A method for forming a silicon carbide film on a substrate accommodated in a chamber, A step of placing a substrate on a support surface of a substrate supporter installed inside the above chamber; A step of injecting a silicon (Si)-containing gas to the entire area of the support surface using a first path provided in an injection unit connected to the chamber and configured to inject gas to the front surface of the support surface; A step of forming an amorphous silicon carbide film on the substrate by forming a first hydrogen plasma inside the chamber while injecting a carbon (C)-containing gas to the entire area of the support surface using a second path provided in the injection unit and configured to inject gas to the entire surface of the support surface; and A method for forming a silicon carbide film, comprising: a step of forming a second hydrogen plasma inside the chamber to crystallize the amorphous silicon carbide film. A first plate including a first opening and a second opening; A method for forming a silicon carbide film on a substrate accommodated in a chamber including a second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of third openings arranged in an alternating manner with the first and second openings, and a turbo molecular pump (TMP), A step of injecting a silicon (Si) containing gas into the interior of the chamber using a first opening connected to the chamber; A step of forming a first hydrogen plasma inside the chamber by injecting a carbon (C)-containing gas into the inside of the chamber using a second opening connected to the chamber, thereby forming an amorphous silicon carbide film on the substrate; and A method for forming a silicon carbide film, comprising: a step of forming a second hydrogen plasma inside the chamber to crystallize the amorphous silicon carbide film. In claim 16, The chamber including the above turbo molecular pump (TMP) comprises: A method for forming a silicon carbide film by controlling the pressure of a high vacuum to 10 mTorr or more and 50 mTorr or less. In Article 16, The above first opening is connected to the gas storage unit, A method for forming a silicon carbide film by temporarily injecting one or more gases from the above gas storage unit and connecting to the first opening. In Article 18, The above gas storage unit includes a pile-up tank, The above pile-up tank is connected to a gas path, filled with one or more gases, and is a method for forming a silicon carbide film by temporarily spraying the filled gas.

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