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WO2025063198A1 - Boîtier de semi-conducteur et procédé de fabrication de boîtier de semi-conducteur - Google Patents

Boîtier de semi-conducteur et procédé de fabrication de boîtier de semi-conducteur Download PDF

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Publication number
WO2025063198A1
WO2025063198A1 PCT/JP2024/033256 JP2024033256W WO2025063198A1 WO 2025063198 A1 WO2025063198 A1 WO 2025063198A1 JP 2024033256 W JP2024033256 W JP 2024033256W WO 2025063198 A1 WO2025063198 A1 WO 2025063198A1
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WO
WIPO (PCT)
Prior art keywords
group
layer
formula
semiconductor package
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/033256
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English (en)
Japanese (ja)
Inventor
裕樹 奈良
大助 柏木
峻輔 北島
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Fujifilm Corp
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Fujifilm Corp
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Publication of WO2025063198A1 publication Critical patent/WO2025063198A1/fr
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14—Polymers provided for in subclass C08G
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12—Unsaturated polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N

Definitions

  • the present invention relates to a semiconductor package and a method for manufacturing a semiconductor package.
  • a semiconductor package is a case that protects components such as delicate semiconductor chips and electronic circuits from the external environment and mounts them on a substrate such as a printed wiring board.
  • a semiconductor package has the function of transmitting signals generated from the above components to other devices and transmitting signals from other devices to the above components.
  • Mobile phones, tablet devices, and other electronic devices are becoming smaller, lighter, and more multifunctional.
  • semiconductor packages to be even smaller, more highly integrated, and more densely packed. For example, there is a need for advances in wiring technology using redistribution layers.
  • Patent Document 1 discloses a semiconductor device comprising a semiconductor die, an encapsulant for encapsulating the semiconductor die, a connector disposed on the encapsulant, a redistribution conductive layer disposed on the encapsulant, in contact with the connector, and having a first conductive pad disposed between the encapsulant and the connector, a second conductive pad in contact with the redistribution conductive layer, and a semiconductor member electrically connected to the second conductive pad, the first conductive pad being disposed at a height lower than the second conductive pad, a first interlayer dielectric layer being disposed on the semiconductor die and the redistribution conductive layer, the first interlayer dielectric layer including an opening, a portion of the opening being occupied by the first conductive pad and the first electrical connector, the second interlayer dielectric layer and a third interlayer dielectric layer being disposed on the semiconductor die and the first interlayer dielectric layer, A semiconductor package is described in which a first conductive pad is disposed under the dielectric layer, a
  • Patent Document 2 discloses a semiconductor device including a first redistribution layer, a second redistribution layer, a first semiconductor die, and a second semiconductor die, the first redistribution layer includes a first surface and a second surface opposite the first surface; a second redistribution layer disposed on the first surface of the first redistribution layer; a first semiconductor die disposed on the first redistribution layer and the second redistribution layer and electrically connected to the first redistribution layer and the second redistribution layer; A semiconductor package is described in which a second semiconductor die is disposed on and electrically connected to the second redistribution layer.
  • the present invention aims to provide a semiconductor package that suppresses the occurrence of abnormalities such as cracks, peeling, and voids during long-term heat resistance tests and moisture resistance tests, and a method for manufacturing the semiconductor package.
  • An encapsulation layer including at least one semiconductor die and an encapsulant; a redistribution layer A contacting at least one of the semiconductor dies and connecting with the circuitry of the semiconductor die; a conductive connection portion connected to the rewiring layer A; A substrate connected to the conductive connection portion,
  • the rewiring layer A is formed by laminating a layer including an insulating pattern A and a conductive pattern A present between the insulating patterns A,
  • the insulating pattern A has a via structure, and an angle between a side surface of the via structure and a bottom surface of the insulating pattern A is 70 to 110°.
  • ⁇ 2> The semiconductor package described in ⁇ 1>, wherein the encapsulation layer is an encapsulation layer including two or more semiconductor dies and an encapsulant, and circuits in two or more of the two or more semiconductor dies are connected to the redistribution layer A.
  • the encapsulation layer is an encapsulation layer including two or more semiconductor dies and an encapsulant, and circuits in two or more of the two or more semiconductor dies are connected to the redistribution layer A.
  • ⁇ 3> The semiconductor package according to ⁇ 1> or ⁇ 2>, further comprising one or more semiconductor dies present outside the sealing layer and connected to the redistribution layer A.
  • ⁇ 4> The semiconductor package according to any one of ⁇ 1> to ⁇ 3>, wherein the redistribution layer A has a laminated structure of four or more layers.
  • ⁇ 5> The semiconductor package according to any one of ⁇ 1> to ⁇ 4>, wherein the wiring in the rewiring layer A includes a line pattern, and the minimum line width of the line pattern is 0.1 to 10 ⁇ m.
  • ⁇ 6> The semiconductor package according to any one of ⁇ 1> to ⁇ 5>, wherein the insulating pattern A contains a resin having a repeating unit represented by the following formula (1-1): In formula (1-1), X1 represents an organic group having 4 or more carbon atoms, and Y1 represents an organic group having 4 or more carbon atoms.
  • X 1 and Y 1 in formula (1-1) are each independently an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-4):
  • R 1 and X1 each independently represent a hydrogen atom, an alkyl group or a halogenated alkyl group.
  • R 1 X2 and R 1 X3 each independently represent a hydrogen atom or a substituent, and R 1 X2 and R 1 X3 may be bonded to form a ring structure.
  • ⁇ 8> The semiconductor package according to any one of ⁇ 1> to ⁇ 7>, wherein the insulating pattern A has a breaking elongation of 40% or more.
  • ⁇ 9> The semiconductor package according to any one of ⁇ 1> to ⁇ 8>, wherein the insulating pattern A has a glass transition temperature of 220° C. or higher.
  • ⁇ 10> The semiconductor package according to any one of ⁇ 1> to ⁇ 9>, wherein the insulating pattern A has a Young's modulus of 2.7 GPa or more.
  • the rewiring layer A forming step includes forming a via structure by the insulating pattern A, and an angle between a side surface of the via structure and a bottom surface of the insulating pattern A is 70 to 110°.
  • a method for manufacturing a semiconductor package ⁇ 12> The method for producing a semiconductor package according to ⁇ 11>, wherein the insulating pattern A is formed using a negative type photosensitive resin composition.
  • the negative photosensitive resin composition contains a resin having at least one repeating unit selected from the repeating units represented by the following formula (4-1) and the repeating units represented by the following formula (4-2):
  • X 1 is a tetravalent organic group
  • Y 1 is a divalent organic group
  • R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group.
  • X1 represents an organic group having 4 or more carbon atoms
  • Y1 represents an organic group having 4 or more carbon atoms
  • each R1 independently represents a structure containing a polymerizable group
  • n and m independently represent an integer of 0 to 4.
  • X 1 and Y 1 in the formula (4-1) are each independently an organic group having a structure obtained by removing two or more hydrogen atoms from a structure represented by any one of the following formulas (V-1) to (V-4), and X 1 and Y 1 in the formula (4-2) are each independently an organic group having a structure obtained by removing two or more hydrogen atoms from a structure represented by any one of the following formulas (V-1) to (V-4).
  • R 1 and X1 each independently represent a hydrogen atom, an alkyl group or a halogenated alkyl group.
  • R 1 X2 and R 1 X3 each independently represent a hydrogen atom or a substituent, and R 1 X2 and R 1 X3 may be bonded to form a ring structure.
  • the negative photosensitive resin composition contains an oxime initiator.
  • the negative photosensitive resin composition contains a polymerizable compound having two or more ethylenically unsaturated bonds.
  • ⁇ 17> The method for producing a semiconductor package according to any one of ⁇ 12> to ⁇ 16>, wherein in the redistribution layer A formation step, a photosensitive film formed from the negative photosensitive resin composition is exposed to light by an i-line stepper.
  • ⁇ 18> The method for manufacturing a semiconductor package according to ⁇ 17>, wherein the numerical aperture of the i-line stepper is 0.10 to 0.60.
  • ⁇ 19> The method for manufacturing a semiconductor package according to ⁇ 17> or ⁇ 18>, wherein the exposure illuminance of the i-line stepper is 500 to 50,000 W/ m2 .
  • ⁇ 20> The method for manufacturing a semiconductor package according to any one of ⁇ 17> to ⁇ 19>, wherein the exposure dose by the i-line stepper is 1 to 2000 mJ/ cm2 .
  • ⁇ 21> The method for manufacturing a semiconductor package according to any one of ⁇ 11> to ⁇ 20>, wherein the via structure is formed by development using a solvent as a developer.
  • the present invention provides a semiconductor package that suppresses the occurrence of abnormalities such as cracks, peeling, and voids during long-term heat resistance tests and moisture resistance tests, and a method for manufacturing the semiconductor package.
  • FIG. 2 is a schematic cross-sectional view showing an example of a redistribution layer A.
  • FIG. FIG. 2 is an enlarged view of the dashed dotted line portion in FIG. 1 .
  • 4 is a schematic cross-sectional view showing a specific example of a conductive connection portion.
  • FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor package of the present invention.
  • FIG. 4 is a schematic cross-sectional view showing another example of a semiconductor package of the present invention.
  • 1A to 1C are schematic cross-sectional views showing an example of a method for producing a semiconductor package according to the present invention.
  • 4 is a schematic cross-sectional view showing another example of the method for manufacturing a semiconductor package of the present invention.
  • FIG. FIG. 2 is a schematic cross-sectional view showing the configuration of a laminate used in the examples.
  • a numerical range expressed using the symbol "to” means a range that includes the numerical values before and after "to” as the lower limit and upper limit, respectively.
  • the term “step” includes not only an independent step, but also a step that cannot be clearly distinguished from another step, so long as the intended effect of the step can be achieved.
  • groups (atomic groups) when there is no indication of whether they are substituted or unsubstituted, the term encompasses both unsubstituted groups (atomic groups) and substituted groups (atomic groups).
  • an "alkyl group” encompasses not only alkyl groups that have no substituents (unsubstituted alkyl groups) but also alkyl groups that have substituents (substituted alkyl groups).
  • exposure includes not only exposure using light but also exposure using particle beams such as electron beams and ion beams. Examples of light used for exposure include the bright line spectrum of a mercury lamp, far ultraviolet light represented by an excimer laser, extreme ultraviolet light (EUV light), X-rays, electron beams, and other actinic rays or radiation.
  • (meth)acrylate means both or either of “acrylate” and “methacrylate”
  • (meth)acrylic means both or either of “acrylic” and “methacrylic”
  • (meth)acryloyl means both or either of “acryloyl” and “methacryloyl”.
  • Me represents a methyl group
  • Et represents an ethyl group
  • Bu represents a butyl group
  • Ph represents a phenyl group.
  • the total solid content refers to the total mass of all components of the composition excluding the solvent
  • the solid content concentration refers to the mass percentage of the other components excluding the solvent with respect to the total mass of the composition.
  • the weight average molecular weight (Mw) and the number average molecular weight (Mn) are values measured using a gel permeation chromatography (GPC) method, and are defined as polystyrene equivalent values, unless otherwise specified.
  • the weight average molecular weight (Mw) and the number average molecular weight (Mn) can be determined, for example, by using HLC-8220GPC (manufactured by Tosoh Corporation) and using guard columns HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (all manufactured by Tosoh Corporation) connected in series as columns.
  • these molecular weights are measured using THF (tetrahydrofuran) as the eluent.
  • THF tetrahydrofuran
  • NMP N-methyl-2-pyrrolidone
  • detection in GPC measurement is performed using a UV (ultraviolet) light detector with a wavelength of 254 nm.
  • a third layer or element may be interposed between the reference layer and the other layer, and the reference layer does not need to be in contact with the other layer.
  • the direction in which the layers are stacked on the substrate is referred to as "upper", or, in the case of a resin composition layer, the direction from the substrate to the resin composition layer is referred to as “upper”, and the opposite direction is referred to as "lower”. Note that such a vertical direction is set for the convenience of this specification, and in an actual embodiment, the "upper” direction in this specification may be different from the vertical upward direction.
  • the composition may contain, as each component contained in the composition, two or more compounds corresponding to that component.
  • the content of each component in the composition means the total content of all compounds corresponding to that component.
  • the temperature is 23° C.
  • the pressure is 101,325 Pa (1 atm)
  • the relative humidity is 50% RH.
  • combinations of preferred aspects are more preferred aspects.
  • the semiconductor package of the present invention comprises an encapsulating layer including at least one semiconductor die and an encapsulant, a rewiring layer A that contacts at least one of the semiconductor dies and connects to a circuit of the semiconductor die, a conductive connection portion that connects to the rewiring layer A, and a substrate that connects to the conductive connection portion, wherein the rewiring layer A is formed by stacking layers including an insulating pattern A and a conductive pattern A that exists between patterns of the insulating pattern A, the insulating pattern A having a via structure, and an angle between a side surface of the via structure and a bottom surface of the insulating pattern A being 70 to 110°.
  • the angle between the side surface of the via structure and the bottom surface of the insulating pattern A will be simply referred to as the "taper angle.”
  • the semiconductor package of the present invention is suppressed from generating defects such as cracks, peeling, and voids during long-term heat resistance tests and moisture resistance tests.
  • the mechanism by which the above effects are obtained is unclear, but is speculated to be as follows.
  • via structures have been formed in the redistribution layer to connect adjacent layers, but long-term heat resistance tests and moisture resistance tests have sometimes caused abnormalities such as cracks, peeling, and voids in the insulating pattern near the via structures.
  • the via structure is formed, for example, by a method of forming via holes by patterning an insulating material, and then filling the via holes with a metal such as copper.
  • the shape of the via hole may end up being, for example, an inverted truncated cone, resulting in a small taper angle.
  • the taper angle becomes small in this manner, it is presumed that the expansion of the insulating pattern A during long-term heat resistance testing and humidity resistance testing causes stress to concentrate at the intersection between the side surface of the via structure and the bottom surface of the insulating pattern A, making it more likely for abnormalities such as cracks, peeling, and voids to occur.
  • the inventors have considered adopting a configuration in which the taper angle is set to 70 to 110°. It is believed that this configuration suppresses the concentration of the above-mentioned stress, making it difficult for abnormalities such as cracks, peeling, and voids to occur.
  • the semiconductor package of the present invention is described in detail below.
  • the encapsulation layer preferably includes an encapsulant and at least one semiconductor die, the semiconductor die being embedded in the encapsulant.
  • the sealing material is not particularly limited and any known sealing material can be used, but it is preferable that the sealing material is obtained by curing a curable composition (curable adhesive).
  • a curable composition curable adhesive
  • various curable compositions can be used, such as a photocurable composition such as an ultraviolet curable composition, a reactive curable composition such as an anaerobic curable or moisture curable composition, a thermosetting composition, etc.
  • a two-liquid mixture composition, an adhesive sheet, etc. may also be used.
  • curable resin compositions are preferred, and examples of resins that can be used include epoxy resins, silicone resins, acrylic resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins.
  • the curable resin composition may further contain other components such as a filler, a polymerization initiator, a curing agent, a desiccant, etc. As these components, components conventionally known in this field can be used without any particular limitation.
  • a semiconductor die refers to a chip in which a circuit is built, and refers to a die that exhibits functions such as memory and logic.
  • the semiconductor die is preferably a semiconductor chip.
  • the semiconductor die is obtained, for example, by forming a circuit pattern on a substrate such as silicon and then dividing the substrate into individual pieces.
  • the semiconductor die is not particularly limited, but examples thereof include memory ICs, logic ICs, ASICs, and further integrated circuits thereof.
  • the number of semiconductor dies encapsulated in the encapsulation layer is not particularly limited, and may be one or more.
  • a preferred embodiment of the present invention is one in which the encapsulation layer is an encapsulation layer including two or more semiconductor dies and an encapsulant, and the circuits in two or more of the two or more semiconductor dies are connected to the rewiring layer A.
  • the size of the semiconductor die is not particularly limited, and may be, for example, 100 ⁇ m to 10 cm on a side.
  • the semiconductor die may include conductive members that connect with the circuitry in the semiconductor die.
  • the conductive member may be a conductive pad.
  • Examples of materials for the conductive member include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing at least one of these metals. Copper, aluminum, or alloys containing at least one of these metals are preferred, copper or alloys containing copper are more preferred, and copper is even more preferred.
  • circuitry or the conductive members of the semiconductor die are exposed on one side of the encapsulating layer, and it is preferable that the circuitry or the conductive members of the semiconductor die are exposed on one side of the encapsulating layer, and that neither the circuitry nor the conductive members of the semiconductor die are exposed on the other side.
  • the exposed circuit or the conductive member connected to the circuit is connected to a rewiring layer A, which will be described later.
  • the sealing layer preferably further includes a conductive portion that electrically connects one surface of the sealing layer to the other surface of the sealing layer.
  • a conductive portion is preferably included as, for example, a conductive through via that penetrates the sealing layer.
  • the conductive portion connects, for example, the rewiring layer A to other members.
  • the thickness of the sealing layer is not particularly limited and may be determined taking into consideration the thickness of the semiconductor die, etc., but is preferably 1 ⁇ m to 500 ⁇ mcm, and more preferably 10 ⁇ m to 200 ⁇ mcm.
  • the redistribution layer A is a layer that contacts at least one of the semiconductor dies and connects to the circuit of the semiconductor die, and is a layer formed by stacking layers including an insulating pattern A and a conductive pattern A located between the patterns of the insulating pattern A.
  • the conductive pattern A is connected with the semiconductor die on the encapsulation layer.
  • one preferred embodiment is one in which at least a portion of the conductive pattern A contacts a circuit in the semiconductor member exposed on one surface of the sealing layer or a conductive member connected to the circuit.
  • the volume resistivity of the insulating pattern A at 25° C. is not particularly limited, but is preferably 1 ⁇ 10 8 ⁇ cm or more, more preferably 1 ⁇ 10 10 ⁇ cm or more, and even more preferably 1 ⁇ 10 12 ⁇ cm or more.
  • the upper limit is not particularly limited, but is preferably, for example, 1 ⁇ 10 18 ⁇ cm or less.
  • the insulating pattern A has a via structure.
  • the via structure is a structure for connecting adjacent layers in the rewiring layer A, and is preferably a structure having a substantially cylindrical or polygonal prism shape.
  • the diameter of the via structure (in the case of a polygonal column, the circle-equivalent diameter) is not particularly limited, but is preferably 20 to 1 ⁇ m, and more preferably 10 to 2 ⁇ m.
  • a conductive pattern A is preferably disposed within the via structure.
  • other layers, such as a seed layer for forming the conductive pattern A may be further formed in the via structure.
  • the angle (taper angle) between the side surface of the via structure and the bottom surface of the insulating pattern A is 70 to 110°, preferably 75 to 105°, and more preferably 80 to 100°.
  • the above taper angle is the angle between the bottom surface of the insulating pattern A and a straight line connecting the end point of the bottom surface of the insulating pattern A and the end point of the exposed portion of the upper surface side of the insulating pattern A.
  • the bottom surface refers to the surface closer to the sealing layer
  • the top surface refers to the surface farther from the sealing layer.
  • the taper angle is determined by cutting the semiconductor package along a plane including the center of the via structure, polishing the cross section with a milling device ArBlade5000 (manufactured by Hitachi, Ltd.), obtaining an SEM image with an FE-SEM SU-4800 (manufactured by Hitachi, Ltd.), and measuring the angle between the bottom surface of the insulating pattern A and the side surface of the insulating pattern A.
  • the taper angle can be adjusted by the structures and contents of the resin, polymerizable compound, etc. contained in the negative photosensitive resin composition described later, the numerical aperture, exposure amount, exposure illuminance of the exposure light in forming the insulating pattern A, the type of developer during development, and the like.
  • the insulating pattern A preferably contains a resin, and more preferably contains a polyimide.
  • the insulating pattern A is preferably a cured product of a composition for forming the insulating pattern A described below.
  • the insulating pattern A preferably contains a resin having a repeating unit represented by the following formula (1-1).
  • a resin is contained in the insulating pattern as, for example, a polyimide contained in a negative photosensitive resin composition described below, or a polyimide obtained by cyclizing a polyimide precursor contained in a negative photosensitive resin composition.
  • the polymerizable group in the polyimide contained in the negative photosensitive resin composition described below or in the polyimide precursor or the like is preferably polymerized.
  • X1 represents an organic group having 4 or more carbon atoms
  • Y1 represents an organic group having 4 or more carbon atoms.
  • Preferred embodiments of X1 and Y1 in formula (1-1) are the same as the preferred embodiments of X1 and Y1 in formula (4-2) described later.
  • X 1 and Y 1 in formula (1-1) are each independently an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-4).
  • R 1 and X1 each independently represent a hydrogen atom, an alkyl group or a halogenated alkyl group.
  • R 1 X2 and R 1 X3 each independently represent a hydrogen atom or a substituent, and R 1 X2 and R 1 X3 may be bonded to form a ring structure.
  • the breaking elongation of the insulating pattern A is preferably 30% or more, more preferably 40% or more, and even more preferably 50% or more.
  • the upper limit of the breaking elongation is not particularly limited, and is preferably, for example, 100% or less.
  • the breaking elongation is measured with reference to the method described in JIS-K6251 using a tensile tester (Tensilon) at a crosshead speed of 300 mm/min under an environment of 25° C. and 65% RH (relative humidity).
  • the breaking elongation can be adjusted by the structure and content of the resin, polymerizable compound, etc. contained in the negative photosensitive resin composition described below.
  • the glass transition temperature of the insulating pattern A is preferably 200° C. or higher, more preferably 210° C. or higher, and even more preferably 220° C. or higher.
  • the upper limit of the glass transition temperature is not particularly limited, but can be, for example, 350° C. or lower.
  • the glass transition temperature can be measured by changing the temperature conditions of the insulating pattern A in the following order of (1) to (4), creating a differential scanning calorimetry curve, and measuring the temperature at the intersection of a straight line extending the baseline on the low-temperature side of the differential scanning calorimetry curve to the high-temperature side and a tangent drawn at the point where the gradient of the curve in the stepwise change portion of the glass transition is maximum.
  • the glass transition temperature can be adjusted by the structure and content of a specific resin, a polymerizable compound, etc. contained in the negative photosensitive resin composition described later.
  • the Young's modulus of the insulating pattern A is preferably 2.7 GPa or more.
  • the Young's modulus is more preferably equal to or greater than 2.8 GPa, and even more preferably equal to or greater than 3.0 GPa.
  • the Young's modulus is measured in accordance with the method described in JIS-K6251:2017 using a tensile tester (Tensilon) at a crosshead speed of 300 mm/min under an environment of 25°C and 65% RH (relative humidity).
  • the coefficient of thermal expansion (CTE) of the insulating pattern A is preferably 0 to 80 ppm/K, more preferably 5 to 75 ppm/K, and further preferably 10 to 70 ppm/K.
  • the thermal expansion coefficient of the insulating pattern A is measured by the following method. The elongation (displacement) of the insulating pattern A is measured while changing the temperature using a thermomechanical analysis/thermal expansion coefficient measurement device Discovery TMA manufactured by TA Instruments Japan, Inc. The temperature increase and decrease conditions during the evaluation are as follows (1) to (4). (1) The temperature is increased from room temperature to 130° C. at a rate of 5° C./min. (2) The temperature is decreased from 130° C. to 10° C. at a rate of 5° C./min.
  • the temperature is increased from 10° C. to 220° C. at a rate of 5° C./min.
  • the elongation (displacement) of the sample is measured during the temperature increase and decrease processes in (1) to (4) above, and the thermal expansion coefficient is calculated by dividing the longitudinal elongation (displacement) of the sample at 25°C and 125°C in process (3) by the temperature.
  • the volume resistivity of the conductive pattern A at 25° C. is not particularly limited, but is preferably 1 ⁇ 10 ⁇ 5 ⁇ cm or less, more preferably 1 ⁇ 10 ⁇ 6 ⁇ cm or less, and even more preferably 1 ⁇ 10 ⁇ 7 ⁇ cm or less.
  • the lower limit is not particularly limited, but is preferably, for example, 1 ⁇ 10 ⁇ 11 ⁇ cm or more.
  • the material constituting the conductive pattern A is preferably a metal.
  • the metal is not particularly limited, and existing metal species can be used. Examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing at least one of these metals. Copper, aluminum, or alloys containing at least one of these metals are preferred, copper or an alloy containing copper is more preferred, and copper is even more preferred.
  • the conductive pattern A preferably includes a line and space pattern.
  • the line and space pattern is, for example, included as a line and space pattern in which the conductive pattern A is a line portion and the insulating pattern A is a space portion.
  • the minimum line width of the line pattern is preferably 0.1 to 20 ⁇ m, more preferably 0.2 to 15 ⁇ m, and even more preferably 0.3 to 10 ⁇ m.
  • the conductive pattern A preferably has a barrier layer at least in a portion thereof. It is preferable that the conductive pattern A has a barrier layer at least between the conductive pattern A and the insulating pattern A and at the interface between the redistribution layer A and the outside (i.e., the position where the conductive pattern A is exposed in the redistribution layer A). By providing the barrier layer, it is possible to prevent the material (metal, etc.) constituting the conductive pattern from migrating to other members such as the insulating pattern A and the sealing layer.
  • the material constituting the barrier layer is not particularly limited, but examples thereof include tungsten, titanium, and an alloy containing at least one of these metals.
  • the barrier layer can be formed using a metal that has a lower ionization tendency than the material that constitutes the conductive pattern A.
  • the rewiring layer A is formed so as to be electrically connectable to a conductive connection portion, which will be described later.
  • the rewiring layer A may have a configuration in which the conductive pattern A is exposed on a surface other than the surface in contact with the sealing layer, or the barrier layer in contact with the conductive pattern A is exposed.
  • the exposed conductive pattern A or barrier layer is connected to a conductive connection portion, which will be described later, whereby the rewiring layer A is electrically connected to other members.
  • the redistribution layer A may include conductive pads in the outermost layer (i.e., the layer furthest from the encapsulation layer).
  • the material of the conductive pad is preferably a metal.
  • the metal is not particularly limited, and existing metal species can be used. Examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing at least one of these metals. Copper, aluminum, or an alloy containing at least one of these metals is preferred, copper or an alloy containing copper is more preferred, and copper is even more preferred.
  • the conductive pad is provided, the conductive pattern A is electrically connected to other members via the conductive pad.
  • the rewiring layer A is a layer formed by laminating layers including an insulating pattern A and a conductive pattern A.
  • the rewiring layer A preferably includes 1 to 20 layers, and more preferably 2 to 10 layers, each including an insulating pattern A and a conductive pattern A.
  • the thickness of the redistribution layer A is preferably 1 to 100 ⁇ m, more preferably 1 to 50 ⁇ m, and even more preferably 1 to 20 ⁇ m.
  • FIG. 1 is a schematic cross-sectional view showing an example of the redistribution layer A.
  • the rewiring layer A is formed to include an insulating pattern A 12 , a conductive pattern A 14 and a conductive pad 16 .
  • the conductive pattern A14 is connected at the exposed portion 18 to a semiconductor die included in the encapsulation layer.
  • the conductive pads are further provided with conductive connections, which will be described later.
  • the portion surrounded by the dashed line in the rewiring layer A corresponds to the via structure.
  • the rewiring layer A is illustrated as including three layers each including an insulating pattern A and a conductive pattern A.
  • FIG. 2 is an enlarged view of the dashed line portion in FIG.
  • ⁇ is the angle (taper angle) between the side surface of the via structure and the bottom surface of the insulating pattern A.
  • the semiconductor package of the present invention further comprises one or more semiconductor dies that are present outside the sealing layer and are connected to the redistribution layer A.
  • the preferred aspects of the other semiconductor die are similar to the preferred aspects of the semiconductor die included in the encapsulation layer described above, except that they are not encapsulated in the encapsulation layer.
  • the other semiconductor die is preferably disposed on the surface of the sealing layer opposite to the rewiring layer A, and is connected to the rewiring layer A by the conductive portion described above.
  • the number of the other semiconductor dies may be one or more, preferably one to ten, and more preferably one to four. In such embodiments, when more than one semiconductor die is included, each semiconductor die may be the same or different.
  • the semiconductor package of the present invention further includes a conductive connection portion on a surface of the rewiring layer A different from the surface in contact with the sealing layer.
  • the conductive connection portion preferably has a bonding pad structure having a substantially spherical shape, a substantially columnar shape, or an average diameter of 5 ⁇ m or less.
  • the semiconductor package of the present invention may also include a barrier layer between the rewiring layer A and the conductive connecting portion.
  • FIG. 3A is a schematic cross-sectional view of a conductive connection portion having a substantially spherical notch shape.
  • the conductive connection portion 102 is connected to a conductive pattern A108 in the outermost layer of the redistribution layer A via a conductive pad 104, and the conductive pattern A108 is formed between insulating patterns A106 in the outermost layer of the redistribution layer A.
  • a barrier layer may be formed between the conductive pad 104 and the conductive pattern A 108 .
  • the material constituting the conductive connection portion is not particularly limited, but is preferably Sn, Pb, Ag, Cu, Ni, Bi, or an alloy containing any of these.
  • the height of the conductive connection portion is preferably 50 ⁇ m or less, more preferably 20 to 50 ⁇ m, and even more preferably 20 to 40 ⁇ m.
  • FIG. 3B is a schematic cross-sectional view of the conductive connection portion having a substantially columnar shape.
  • the conductive connection portion 102 is a member made up of a solder member 110 and a pillar 112 .
  • the solder member 110 is provisionally depicted as being hemispherical, but this shape is not particularly limited, and the solder member 110 may be cylindrical or have a flat top.
  • the conductive connection portion 102 is connected to a conductive pattern A 108, and the conductive pattern A 108 is formed between insulating patterns A 106.
  • the material constituting the pillar is not particularly limited, but is preferably Sn, Pb, Ag, Cu, Ni, Bi, or an alloy containing any of these, and more preferably Cu.
  • the material constituting the solder member is not particularly limited, but is preferably Sn, Pb, Ni, Bi, or an alloy containing any of these.
  • the height of the conductive connecting parts is preferably 20 ⁇ m or less, more preferably 10 to 20 ⁇ m, and even more preferably 10 to 15 ⁇ m.
  • FIG. 3C is a schematic cross-sectional view of a conductive connection portion having a bonding pad structure with an average diameter of 5 ⁇ m or less.
  • the conductive connection portion 102 is connected to a conductive pattern A 108, and the conductive pattern A 108 is formed between insulating patterns A 106.
  • the material constituting the bonding pad structure is not particularly limited, but is preferably Sn, Pb, Ag, Cu, Ni, Bi, or an alloy containing any of these, and more preferably Cu.
  • the conductive connection portion has a bonding pad structure with an average diameter of 5 ⁇ m or less, the average diameter is 5 ⁇ m or less, preferably 1 to 5 ⁇ m, and more preferably 2 to 5 ⁇ m.
  • the above average diameter is the average diameter of the top surface of the bonding pad structure. If the top surface of the bonding pad structure is not circular, the average diameter refers to the average value of the equivalent circle diameter.
  • the semiconductor package of the present invention has a substrate connected to the conductive connecting portion.
  • the material of the substrate is not particularly limited, and may be a semiconductor production substrate such as silicon, silicon nitride, polysilicon, silicon oxide, or amorphous silicon, quartz, glass, an optical film, a ceramic material, a deposition film, a magnetic film, a reflective film, a metal substrate such as Ni, Cu, Cr, or Fe, paper, SOG (Spin On Glass), a TFT (Thin Film Transistor) array substrate, or an electrode plate for a plasma display panel (PDP), etc.
  • a semiconductor production substrate such as silicon, silicon nitride, polysilicon, silicon oxide, or amorphous silicon, quartz, glass, an optical film, a ceramic material, a deposition film, a magnetic film, a reflective film, a metal substrate such as Ni, Cu, Cr, or Fe, paper, SOG (Spin On Glass), a TFT (Thin Film Transistor) array substrate, or an electrode plate
  • These substrates may have a layer such as an adhesion layer or an oxide layer made of hexamethyldisilazane (HMDS), a sealant (epoxy molding compound: EMC), or the like, provided on the surface.
  • the substrate may be in the form of a wafer or a panel.
  • a semiconductor substrate is particularly preferred, and a silicon substrate (silicon wafer) is more preferred.
  • the substrate may have an electronic circuit region including an electronic circuit.
  • the electronic circuit may have an element such as a semiconductor.
  • the electronic circuit is preferably electrically connected to the conductive pattern A.
  • the substrate may further have a conductive member on a surface other than the surface connected to the conductive pattern A for connecting to another member.
  • FIG. 4 is a schematic cross-sectional view showing an example of a semiconductor package of the present invention.
  • a semiconductor package 20 includes a sealing layer 22, an insulating pattern A 12, a rewiring layer A including a conductive pattern A 14 and a conductive pad 16, a conductive connection portion 24, and a substrate .
  • the thickness of each layer is appropriately changed to make the drawing easier to check, and in reality, for example, the thickness of the redistribution layer A may be several tens to several hundreds times smaller than that of the sealing layer 22, which may differ from the actual scale. This is the same for the other drawings.
  • the encapsulation layer 22 comprises two semiconductor dies 28 and an encapsulant 30 .
  • the semiconductor die 28 is connected to the conductive pattern A14 in the redistribution layer A.
  • a conductive connection portion 24 is formed on the side of the rewiring layer A opposite to the sealing layer 22.
  • the conductive connection portion 24 is depicted as having a substantially spherical recessed shape, but as described above, it may have other shapes such as a substantially columnar shape or a bonding pad.
  • the conductive connection portion 24 is connected to a substrate 26, and an electrode 32 and another conductive connection portion 34 for connecting to another member are disposed on the side of the substrate 26 opposite the conductive connection portion 24.
  • the space between the substrate 26 and the rewiring layer A may be filled with a known underfill material.
  • FIG. 5 is a schematic cross-sectional view showing another example of a semiconductor package of the present invention.
  • the sealing layer 22 includes only one semiconductor die 28, and the conductive pattern A14 is connected to two other semiconductor dies 38 via conductive through vias 36, other conductive pads 40, and other conductive connection parts 42 formed in the sealing layer 22.
  • an insulating layer 44 is formed between the sealing layer 22 and the other conductive pads 40.
  • the space between the rewiring layer A and the substrate 26 may be filled with a known underfill material.
  • the space between the insulating layer 44 and the sealing layer 22 may be filled with a known underfill material.
  • semiconductor die 38 may be encapsulated with a known encapsulant.
  • the method for manufacturing a semiconductor package of the present invention includes: an encapsulating layer forming step of embedding a semiconductor die in an encapsulant and forming an encapsulating layer having one surface on which a circuit of the semiconductor die is exposed and the other surface on which a circuit of the semiconductor die is not exposed; a rewiring layer A forming step of laminating a layer including an insulating pattern A and a conductive pattern A present between patterns of the insulating pattern A on the surface of the encapsulating layer on which the circuit is exposed to form a rewiring layer A; a connection part forming step of forming a conductive connection part on a surface of the rewiring layer A different from the surface in contact with the encapsulating layer; and a step of connecting the connection part to a substrate, wherein the rewiring layer A forming step includes forming a via structure using the insulating pattern A, and an angle between a side surface of the via structure and a bottom
  • the semiconductor package manufacturing method of the present invention can obtain the above-mentioned semiconductor package of the present invention.
  • the method for producing a semiconductor package of the present invention includes a sealing layer forming step.
  • the encapsulation layer formation process provides an encapsulation layer including an encapsulant and a semiconductor die embedded in the encapsulant, in which the circuit of the semiconductor die is exposed on one side and the circuit of the component is not exposed on the other side.
  • the encapsulation layer forming step can be performed, for example, by placing the semiconductor die on a carrier wafer (temporary support), applying the curable composition described above so as to embed the semiconductor die, and curing the composition.
  • a known temporary adhesive layer may also be formed on the carrier wafer. The application and curing of these can be carried out with reference to known methods. Preferred embodiments of the curable composition and the semiconductor die are described above.
  • the surface of the sealing material may be polished after it is hardened.
  • the polishing method includes, but is not limited to, chemical mechanical polishing (CMP) and physical polishing.
  • CMP chemical mechanical polishing
  • the hardened encapsulant can be polished on the side of the semiconductor die having the circuits, thereby exposing the circuits of the semiconductor die on the surface of the encapsulation layer.
  • any method known in the art can be used without particular limitation as long as it is a method that can form a sealing layer.
  • polishing may not be performed in the encapsulation layer forming step, and the circuitry of the semiconductor die may be exposed from the encapsulation layer by simply not encapsulating the surface on which the circuitry is arranged.
  • the preferred embodiments of the encapsulating layer obtained by the encapsulating layer forming step are the same as the preferred embodiments of the encapsulating layer in the semiconductor package of the present invention described above.
  • the conductive portion may not be formed in the sealing layer forming step, and may be formed after the rewiring layer A forming step, as described later.
  • the method for manufacturing a semiconductor package of the present invention may further include a passivation layer forming step of forming a passivation layer after the sealing layer forming step.
  • the passivation layer forming step is preferably performed after the sealing layer forming step and before the rewiring layer A forming step.
  • the passivation layer is formed by coating the surface of the semiconductor die with a passive film, which may suppress the influence of the outside air, the adhesion of dust, and contamination by water or metal on the semiconductor die.
  • the material of the passivation layer is not particularly limited, but examples include SiO 2 , SiN, etc. Alternatively, a resin such as polyimide may be used.
  • the coating method is not particularly limited and any known method can be used. For example, when it is desired to coat with SiN, CVD (chemical vapor deposition) or the like can be used.
  • the manufacturing method of the semiconductor package of the present invention includes a rewiring layer A formation step of forming a rewiring layer A including an insulating pattern A and a conductive pattern A present between the insulating patterns A on the surface of the sealing layer on which the circuit is exposed.
  • the rewiring layer A is formed on the surface of the sealing material where the circuit is exposed by the rewiring layer A forming step.
  • a preferred embodiment of the rewiring layer A is the same as the preferred embodiment of the rewiring layer A in the semiconductor package of the present invention described above.
  • the rewiring layer A forming step preferably includes applying a negative type photosensitive resin composition onto the sealing layer to form a film (film forming step). That is, the insulating pattern A in the rewiring layer A is preferably formed using a negative type photosensitive resin composition. Furthermore, it is more preferable that the redistribution layer A formation process includes the above-mentioned film formation process, an exposure process for selectively exposing the film formed by the film formation process, and a development process for developing the film exposed by the exposure process using a developer to form a pattern.
  • the redistribution layer A formation process includes the above-mentioned film formation process, the above-mentioned exposure process, the above-mentioned development process, and at least one of a heating process for heating the pattern obtained by the development process and a post-development exposure process for exposing the pattern obtained by the development process.
  • a heating process for heating the pattern obtained by the development process and a post-development exposure process for exposing the pattern obtained by the development process.
  • the preferred means for applying the composition onto the sealing layer is coating.
  • Specific examples of the means to be applied include dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, spray coating, spin coating, slit coating, and inkjet methods. From the viewpoint of uniformity of the thickness of the film, spin coating, slit coating, spray coating, or inkjet methods are preferred, and from the viewpoint of uniformity of the thickness of the film and productivity, spin coating and slit coating are more preferred.
  • a film of a desired thickness can be obtained by adjusting the solid content concentration of the composition and the coating conditions according to the means to be applied.
  • the coating method can be appropriately selected depending on the shape of the substrate, and if the substrate is a circular substrate such as a wafer, spin coating, spray coating, inkjet, etc. are preferred, and if the substrate is a rectangular substrate, slit coating, spray coating, inkjet, etc. are preferred.
  • the spin coating method for example, it can be applied for about 10 seconds to 3 minutes at a rotation speed of 500 to 3,500 rpm.
  • a coating film formed in advance on a temporary support by the above-mentioned application method may be transferred onto the sealing layer.
  • the transfer method the production methods described in paragraphs 0023 and 0036 to 0051 of JP-A No.
  • 2006-023696 and paragraphs 0096 to 0108 of JP-A No. 2006-047592 can be suitably used.
  • a process for removing excess film from the edge of the sealing layer may be performed, such as edge bead rinsing (EBR) and back rinsing.
  • EBR edge bead rinsing
  • a pre-wetting step may be employed in which various solvents are applied to the substrate before the composition is applied to the sealing layer to improve the wettability of the sealing layer, and then the composition is applied.
  • the above-mentioned film may be subjected to a step of drying the formed film (layer) (drying step) in order to remove the solvent.
  • the rewiring layer A forming step may include a drying step of drying the film formed in the film forming step.
  • the drying step is preferably carried out after the film-forming step and before the exposure step.
  • the drying temperature of the film in the drying step is preferably 50 to 150° C., more preferably 70 to 130° C., and even more preferably 90 to 110° C. Drying may be performed under reduced pressure.
  • the drying time is, for example, 30 seconds to 20 minutes, preferably 1 to 10 minutes, and more preferably 2 to 7 minutes.
  • the film may be subjected to an exposure step to selectively expose the film to light.
  • the rewiring layer A forming step may include an exposure step of selectively exposing the film formed in the film forming step. Selective exposure means that only a portion of the film is exposed, and selective exposure results in exposed and unexposed areas of the film.
  • the amount of exposure is not particularly limited as long as it can harden the film, but is preferably 50 to 10,000 mJ/cm 2 , and more preferably 200 to 8,000 mJ/cm 2 , calculated as exposure energy at a wavelength of 365 nm.
  • the exposure wavelength can be appropriately set in the range of 190 to 1,000 nm, with 240 to 550 nm being preferred.
  • the exposure wavelength may be, for example, (1) semiconductor laser (wavelength 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355 nm, etc.), (2) metal halide lamp, (3) high pressure mercury lamp, g-line (wavelength 436 nm), h-line (wavelength 405 nm), i-line (wavelength 365 nm), broad (three wavelengths of g, h, and i-line), (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), F2 excimer laser (wavelength 157 nm), (5) extreme ultraviolet light; EUV (wavelength 13.6 nm), (6) electron beam, (7) second harmonic 532 nm, third harmonic 355 nm, etc.
  • semiconductor laser wavelength 830 nm, 532 nm, 488 nm, 405 nm, 375 nm,
  • the exposure method is not particularly limited as long as it is a method that exposes at least a part of the film, and examples of the exposure method include exposure using a photomask and exposure by a laser direct imaging method.
  • the photosensitive film formed from the negative photosensitive resin composition is preferably exposed to light by an i-line stepper.
  • the taper angle can be adjusted by appropriately adjusting the numerical aperture, exposure illuminance, exposure amount, etc. of this i-line stepper.
  • the numerical aperture of the i-line stepper is preferably 0.10 to 0.60.
  • a high numerical aperture is preferable when high resolution is required, and a low numerical aperture is preferable when a wide focus margin is required.
  • the high numerical aperture is preferably 0.40 to 0.60, more preferably 0.45 to 0.57, and even more preferably 0.47 to 0.55.
  • the low numerical aperture is preferably 0.10 to 0.30, more preferably 0.13 to 0.27, and even more preferably 0.15 to 0.25.
  • the exposure illuminance of the i-line stepper is preferably 500 to 50,000 W/ m2 , more preferably 1,000 to 30,000 W/ m2 , and even more preferably 3,000 to 20,000 W/ m2 .
  • the exposure dose by the i-line stepper is preferably from 1 to 2000 mJ/cm 2 , more preferably from 50 to 1500 mJ/cm 2 , and further preferably from 100 to 700 mJ/cm 2 .
  • the film may be subjected to a step of heating after exposure (post-exposure baking step). That is, the rewiring layer A forming step may include a post-exposure baking step of heating the film exposed in the exposure step.
  • the post-exposure baking step can be carried out after the exposure step and before the development step.
  • the heating temperature in the post-exposure baking step is preferably from 50°C to 140°C, and more preferably from 60°C to 120°C.
  • the heating time in the post-exposure baking step is preferably from 30 seconds to 300 minutes, and more preferably from 1 minute to 10 minutes.
  • the heating rate in the post-exposure heating step is preferably from 1 to 12° C./min, more preferably from 2 to 10° C./min, and even more preferably from 3 to 10° C./min, from the temperature at the start of heating to the maximum heating temperature.
  • the rate of temperature rise may be appropriately changed during heating.
  • the heating means in the post-exposure baking step is not particularly limited, and known hot plates, ovens, infrared heaters, etc. can be used. It is also preferable that the heating be performed in an atmosphere of low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon.
  • the film may be subjected to a development step in which the film is developed with a developer to form a pattern.
  • the rewiring layer A forming step may include a developing step in which the film exposed in the exposure step is developed with a developer to form a pattern. Development removes one of the exposed and unexposed areas of the film to form a pattern.
  • development in which the non-exposed portion of the film is removed by the development process is called negative development
  • development in which the exposed portion of the film is removed by the development process is called positive development.
  • the via structure in the insulating pattern A it is preferable that the via structure is formed by development using a solvent as a developer.
  • the developer used in the development step may be an aqueous alkaline solution or a developer containing an organic solvent.
  • examples of basic compounds that the alkaline aqueous solution may contain include inorganic alkalis, primary amines, secondary amines, tertiary amines, and quaternary ammonium salts.
  • TMAH tetramethylammonium hydroxide
  • potassium hydroxide sodium carbonate, sodium hydroxide, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-butylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, tetrahexylammonium hydroxide, tetraoctylammonium hydroxide, ethyltrimethylammonium hydroxide, butyltrimethylammonium hydroxide, methyltriamylammonium hydroxide, dibutyldipentylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammoni
  • the compounds described in paragraph 0387 of WO 2021/112189 can be used as the organic solvent.
  • the organic solvent examples include methanol, ethanol, propanol, isopropanol, butanol, pentanol, octanol, diethylene glycol, propylene glycol, methyl isobutyl carbinol, and triethylene glycol
  • examples of amides that are suitable include N-methylpyrrolidone, N-ethylpyrrolidone, and dimethylformamide.
  • the organic solvent may be used alone or in combination of two or more.
  • a developer containing at least one selected from the group consisting of cyclopentanone, ⁇ -butyrolactone, dimethylsulfoxide, N-methyl-2-pyrrolidone, and cyclohexanone is particularly preferred, a developer containing at least one selected from the group consisting of cyclopentanone, ⁇ -butyrolactone, and dimethylsulfoxide is more preferred, and a developer containing cyclopentanone is particularly preferred.
  • the content of the organic solvent relative to the total mass of the developer is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 80% by mass or more, and particularly preferably 90% by mass or more.
  • the content may be 100% by mass.
  • the developer may further contain at least one of a basic compound and a base generator.
  • the performance of the pattern such as the breaking elongation, may be improved.
  • an organic base is preferred.
  • a basic compound having an amino group is preferable, and a primary amine, a secondary amine, a tertiary amine, an ammonium salt, a tertiary amide, or the like is preferable.
  • a primary amine, a secondary amine, a tertiary amine, or an ammonium salt is preferable, a secondary amine, a tertiary amine, or an ammonium salt is more preferable, a secondary amine or a tertiary amine is even more preferable, and a tertiary amine is particularly preferable.
  • the basic compound is one that is unlikely to remain in the cured film (obtained cured product), and from the viewpoint of promoting cyclization, it is preferable for the amount of the basic compound that remains to be unlikely to decrease due to vaporization or the like before heating. Therefore, the boiling point of the basic compound is preferably 30°C to 350°C, more preferably 80°C to 270°C, and even more preferably 100°C to 230°C at normal pressure (101,325 Pa). The boiling point of the basic compound is preferably higher than the temperature obtained by subtracting 20° C.
  • the basic compound used preferably has a boiling point of 80° C. or higher, and more preferably has a boiling point of 100° C. or higher.
  • the developer may contain only one kind of basic compound, or may contain two or more kinds of basic compounds.
  • basic compounds include ethanolamine, diethanolamine, triethanolamine, ethylamine, diethylamine, triethylamine, hexylamine, dodecylamine, cyclohexylamine, cyclohexylmethylamine, cyclohexyldimethylamine, aniline, N-methylaniline, N,N-dimethylaniline, diphenylamine, pyridine, butylamine, isobutylamine, dibutylamine, tributylamine, dicyclohexylamine, DBU (diazabicycloundecene), DABCO (1,4-diazabicyclo[2.2.2]octane), N,N-diisopropylethylamine, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, ethylenediamine, butanediamine, 1,5-diamino Examples include pentane, N-methylhexy
  • the preferred embodiment of the base generator is the same as the preferred embodiment of the base generator contained in the composition described above.
  • the base generator is a thermal base generator.
  • the content of the basic compound or the base generator is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the developer.
  • the lower limit of the content is not particularly limited, but is preferably, for example, 0.1% by mass or more.
  • the content of the basic compound or base generator is preferably 70 to 100% by mass based on the total solid content of the developer.
  • the developer may contain at least one of a basic compound and a base generator, or may contain two or more of them. When at least one of a basic compound and a base generator contains two or more kinds, the total amount of them is preferably within the above range.
  • the developer may further comprise other components.
  • other components include known surfactants and known defoamers.
  • the method of supplying the developer is not particularly limited as long as it can form a desired pattern, and includes a method of immersing a substrate on which a film is formed in the developer, a paddle development method in which the developer is supplied to a film formed on a substrate using a nozzle, and a method of continuously supplying the developer.
  • the type of nozzle is not particularly limited, and examples thereof include a straight nozzle, a shower nozzle, and a spray nozzle.
  • a method of supplying the developer through a straight nozzle or a method of continuously supplying the developer through a spray nozzle is preferred, and from the viewpoint of the permeability of the developer into the image areas, a method of supplying the developer through a spray nozzle is more preferred.
  • a process may be adopted in which the developer is continuously supplied through a straight nozzle, the substrate is spun to remove the developer from the substrate, and after spin drying, the developer is continuously supplied again through a straight nozzle, and the substrate is spun to remove the developer from the substrate. This process may be repeated multiple times.
  • Methods of supplying the developer in the development step include a step in which the developer is continuously supplied to the substrate, a step in which the developer is kept substantially stationary on the substrate, a step in which the developer is vibrated by ultrasonic waves or the like on the substrate, and a combination of these steps.
  • the development time is preferably 3 seconds to 10 minutes, and more preferably 5 seconds to 5 minutes.
  • the temperature of the developer during development is not particularly specified, but is preferably 10 to 45°C, and more preferably 18°C to 30°C.
  • the pattern may be washed (rinsed) with a rinse solution. Also, a method may be adopted in which a rinse solution is supplied before the developer in contact with the pattern has completely dried.
  • the rinse liquid may be, for example, water.
  • the rinse liquid may be, for example, a solvent different from the solvent contained in the developer (for example, water, an organic solvent different from the organic solvent contained in the developer).
  • the organic solvent include the same organic solvents as those exemplified when the developer contains an organic solvent.
  • the organic solvent contained in the rinse liquid is preferably different from the organic solvent contained in the developer, and more preferably has a lower solubility for the pattern than the organic solvent contained in the developer.
  • the organic solvent may be used alone or in a mixture of two or more.
  • the organic solvent is preferably cyclopentanone, ⁇ -butyrolactone, dimethylsulfoxide, N-methylpyrrolidone, cyclohexanone, PGMEA, or PGME, more preferably cyclopentanone, ⁇ -butyrolactone, dimethylsulfoxide, PGMEA, or PGME, and even more preferably cyclohexanone or PGMEA.
  • the organic solvent preferably accounts for 50% by mass or more, more preferably 70% by mass or more, and even more preferably 90% by mass or more, based on the total mass of the rinse solution. Furthermore, the organic solvent may account for 100% by mass, based on the total mass of the rinse solution.
  • the rinse liquid may contain at least one of a basic compound and a base generator.
  • a basic compound and a base generator when the developer contains an organic solvent, an embodiment in which the rinsing liquid contains an organic solvent and at least one of a basic compound and a base generator is also one of the preferred embodiments of the present invention.
  • the basic compound and base generator contained in the rinse solution include the compounds exemplified as the basic compound and base generator that may be contained in the above-mentioned developer containing an organic solvent, and preferred embodiments thereof are also the same.
  • the basic compound and base generator contained in the rinse solution may be selected in consideration of the solubility in the solvent in the rinse solution.
  • the content of the basic compound or the base generator is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the rinse solution.
  • the lower limit of the content is not particularly limited, but is preferably, for example, 0.1% by mass or more.
  • the content of the basic compound or base generator is preferably 70 to 100 mass % based on the total solid content of the rinse liquid.
  • the rinse solution may contain only one kind of at least one of the basic compound and the base generator, or may contain two or more kinds.
  • the total amount thereof is preferably within the above range.
  • the rinse solution may further contain other ingredients.
  • other components include known surfactants and known defoamers.
  • the method of supplying the rinse liquid is not particularly limited as long as it can form a desired pattern, and examples of the method include a method of immersing the substrate in the rinse liquid, a method of supplying the rinse liquid to the substrate by puddling, a method of supplying the rinse liquid to the substrate by showering, and a method of continuously supplying the rinse liquid onto the substrate by means of a straight nozzle or the like.
  • the rinse liquid may be supplied using a shower nozzle, a straight nozzle, a spray nozzle, etc., and the method of continuously supplying the rinse liquid using a spray nozzle is preferred, while from the viewpoint of the permeability of the rinse liquid into the image areas, the method of supplying the rinse liquid using a spray nozzle is more preferred.
  • the type of nozzle is not particularly limited, and examples thereof include a straight nozzle, a shower nozzle, a spray nozzle, etc.
  • the rinsing step is preferably a step of supplying a rinsing liquid to the exposed film through a straight nozzle or continuously supplying the rinsing liquid to the exposed film, and more preferably a step of supplying the rinsing liquid through a spray nozzle.
  • the method of supplying the rinsing liquid in the rinsing step may be a step in which the rinsing liquid is continuously supplied to the substrate, a step in which the rinsing liquid is kept substantially stationary on the substrate, a step in which the rinsing liquid is vibrated on the substrate by ultrasonic waves or the like, or a combination of these steps.
  • the rinsing time is preferably 10 seconds to 10 minutes, and more preferably 20 seconds to 5 minutes.
  • the temperature of the rinsing liquid during rinsing is not particularly specified, but is preferably 10 to 45°C, and more preferably 18°C to 30°C.
  • the developing step may include a step of contacting the pattern with a processing liquid after the treatment with the developing liquid or after the pattern is washed with a rinsing liquid. Also, a method may be adopted in which the processing liquid is supplied before the developing liquid or rinsing liquid in contact with the pattern is completely dried.
  • the treatment liquid includes a treatment liquid containing at least one of water and an organic solvent, and at least one of a basic compound and a base generator.
  • Preferred aspects of the organic solvent, and at least one of the basic compound and the base generator are the same as the preferred aspects of the organic solvent, and at least one of the basic compound and the base generator used in the above-mentioned rinse solution.
  • the method of supplying the processing liquid to the pattern can be the same as the above-mentioned method of supplying the rinsing liquid, and the preferred embodiments are also the same.
  • the content of the basic compound or base generator in the treatment liquid is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the treatment liquid.
  • the lower limit of the content is not particularly limited, but is preferably, for example, 0.1% by mass or more.
  • the content of the basic compound or base generator is preferably 70 to 100 mass % based on the total solid content of the treatment liquid.
  • the treatment liquid may contain only one kind of at least one of the basic compound and the base generator, or may contain two or more kinds.
  • the total amount thereof is preferably within the above range.
  • the pattern obtained by the development step (if a rinsing step is performed, the pattern after rinsing) may be subjected to a heating step in which the pattern obtained by the development step is heated. That is, the rewiring layer A forming step may include a heating step of heating the pattern obtained by the developing step.
  • the resin such as the polyimide precursor is cyclized to become a resin such as a polyimide.
  • crosslinking of unreacted crosslinkable groups in the specific resin or in the crosslinking agent other than the specific resin also proceeds.
  • the heating temperature (maximum heating temperature) in the heating step is preferably 50 to 450°C, more preferably 150 to 350°C, further preferably 150 to 250°C, even more preferably 160 to 250°C, and particularly preferably 160 to 230°C.
  • the heating step is preferably a step in which the cyclization reaction of the polyimide precursor is promoted within the pattern by the action of the base generated from the base generator through heating.
  • the heating step is preferably performed at a temperature rise rate of 1 to 12° C./min from the starting temperature to the maximum heating temperature.
  • the temperature rise rate is more preferably 2 to 10° C./min, and even more preferably 3 to 10° C./min.
  • the temperature is increased from the starting temperature to the maximum heating temperature at a rate of preferably 1 to 8° C./sec, more preferably 2 to 7° C./sec, and even more preferably 3 to 6° C./sec.
  • the temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, and even more preferably 25°C to 120°C.
  • the temperature at the start of heating refers to the temperature at which the process of heating to the maximum heating temperature begins. For example, when the composition is applied to a substrate and then dried, it is the temperature of the film (layer) after this drying, and it is preferable to raise the temperature from a temperature 30 to 200°C lower than the boiling point of the solvent contained in the composition.
  • the heating time (heating time at the maximum heating temperature) is preferably 5 to 360 minutes, more preferably 10 to 300 minutes, and even more preferably 15 to 240 minutes.
  • the heating temperature is preferably 30° C. or higher, more preferably 80° C. or higher, even more preferably 100° C. or higher, and particularly preferably 120° C. or higher.
  • the upper limit of the heating temperature is preferably 350° C. or less, more preferably 250° C. or less, and even more preferably 240° C. or less.
  • Heating may be performed stepwise. For example, a process may be performed in which the temperature is increased from 25°C to 120°C at 3°C/min, held at 120°C for 60 minutes, increased from 120°C to 180°C at 2°C/min, and held at 180°C for 120 minutes. It is also preferable to treat while irradiating with ultraviolet light as described in U.S. Pat. No. 9,159,547. Such a pretreatment process can improve the properties of the film.
  • the pretreatment process may be performed for a short time of about 10 seconds to 2 hours, and more preferably for 15 seconds to 30 minutes.
  • the pretreatment process may be performed in two or more steps, for example, a first pretreatment process may be performed in the range of 100 to 150°C, and then a second pretreatment process may be performed in the range of 150 to 200°C. Furthermore, after heating, the material may be cooled, and in this case, the cooling rate is preferably 1 to 5° C./min.
  • the heating step is preferably performed in an atmosphere with a low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon, or by performing the heating step under reduced pressure, etc.
  • the oxygen concentration is preferably 50 ppm (volume ratio) or less, and more preferably 20 ppm (volume ratio) or less.
  • the heating means in the heating step is not particularly limited, but examples thereof include a hot plate, an infrared oven, an electric heating oven, a hot air oven, and an infrared oven.
  • the pattern obtained by the development step (if a rinsing step is performed, the pattern after rinsing) may be subjected to a post-development exposure step in which the pattern after the development step is exposed to light, instead of or in addition to the heating step. That is, the redistribution layer A formation process may include a post-development exposure process of exposing the pattern obtained by the development process.
  • the redistribution layer A formation process may include a heating process and a post-development exposure process, or may include only one of the heating process and the post-development exposure process.
  • the post-development exposure step for example, a reaction in which cyclization of a polyimide precursor or the like proceeds due to exposure of a photobase generator to light, or a reaction in which elimination of an acid-decomposable group proceeds due to exposure of a photoacid generator to light, can be promoted.
  • the post-development exposure step it is sufficient that at least a part of the pattern obtained in the development step is exposed, but it is preferable that the entire pattern is exposed.
  • the exposure dose in the post-development exposure step is preferably 50 to 20,000 mJ/cm 2 , and more preferably 100 to 15,000 mJ/cm 2 , calculated as exposure energy at a wavelength to which the photosensitive compound has sensitivity.
  • the post-development exposure step can be carried out, for example, using the light source in the exposure step described above, and it is preferable to use broadband light.
  • the pattern obtained by the development step may be subjected to a metal layer forming step in which a metal layer is formed on the pattern.
  • the pattern obtained in the development step corresponds to the insulating pattern A
  • the metal layer formed in the metal layer formation step corresponds to the conductive pattern A. That is, the redistribution layer A formation process preferably includes a metal layer formation process of forming a metal layer on the pattern obtained by the development process (preferably subjected to at least one of a heating process and a post-development exposure process).
  • the metal layer can be made of any existing metal species without any particular limitations, and examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing these metals, with copper and aluminum being more preferred, and copper being even more preferred.
  • the method for forming the metal layer is not particularly limited, and existing methods can be applied.
  • the methods described in JP-A-2007-157879, JP-T-2001-521288, JP-A-2004-214501, JP-A-2004-101850, U.S. Pat. No. 7,888,181 B2, and U.S. Pat. No. 9,177,926 B2 can be used.
  • photolithography, PVD (physical vapor deposition), CVD (chemical vapor deposition), lift-off, electrolytic plating, electroless plating, etching, printing, and combinations of these methods can be considered.
  • the metal layer forming step includes forming a barrier layer on the formed metal layer after the metal layer is formed.
  • a method for forming the barrier layer a conventionally known method can be used without any particular limitation.
  • the thickness of the metal layer at its thickest point is preferably 0.01 to 50 ⁇ m, and more preferably 1 to 10 ⁇ m.
  • the rewiring layer A forming step may include a resist layer forming step prior to the metal layer forming step. Furthermore, the rewiring layer A forming step may include a resist layer peeling step after the metal layer forming step. These steps can be carried out by known methods. By carrying out these steps, a line and space pattern or the like can be formed as the conductive pattern A.
  • the redistribution layer A forming step may further include a polishing step of polishing the surface of the redistribution layer A after the metal layer forming step.
  • the polishing method include chemical mechanical polishing (CMP) and physical polishing, but are not limited to these, and any known method can be used without any particular limitation.
  • the rewiring layer A forming step of the present invention includes a lamination step.
  • the lamination process is a series of processes including performing at least one of (a) a film formation process (layer formation process), (b) an exposure process, (c) a development process, and (d) a heating process and a post-development exposure process again on the surface of the pattern (resin layer) or metal layer in this order.
  • at least one of (a) the film formation process and (d) the heating process and the post-development exposure process may be repeated.
  • a metal layer formation process may be included. It goes without saying that the lamination process may further include the above-mentioned drying process and the like as appropriate.
  • a surface activation treatment step may be performed after the exposure step, the heating step, or the metal layer formation step.
  • An example of the surface activation treatment is a plasma treatment. Details of the surface activation treatment will be described later.
  • the lamination step is preferably carried out 2 to 20 times, and more preferably 2 to 9 times.
  • a structure of 2 to 20 resin layers such as resin layer/metal layer/resin layer/metal layer/resin layer/metal layer, is preferred, and a structure of 2 to 9 resin layers is more preferred.
  • the layers may be the same or different in composition, shape, film thickness, etc.
  • the process may be repeated in the order of (a) film forming process, (b) exposure process, (c) development process, (d) at least one of a heating process and a post-development exposure process, and (e) metal layer forming process, or the process may be repeated in the order of (a) film forming process, (d) at least one of a heating process and a post-development exposure process, and (e) metal layer forming process.
  • the composition layer (resin layer) and the metal layer can be laminated alternately.
  • the rewiring layer A forming step preferably includes a surface activation treatment step of subjecting at least a part of the metal layer and the composition layer to a surface activation treatment.
  • the surface activation treatment step is usually carried out after the metal layer formation step, but after the above-mentioned development step (preferably after at least one of the heating step and the post-development exposure step), the composition layer may be subjected to a surface activation treatment step before the metal layer formation step.
  • the surface activation treatment may be performed only on at least a part of the metal layer, or may be performed only on at least a part of the composition layer after exposure, or may be performed on at least a part of both the metal layer and the composition layer after exposure.
  • the surface activation treatment is preferably performed on at least a part of the metal layer, and it is preferable to perform the surface activation treatment on a part or all of the area of the metal layer on which the composition layer is formed. In this way, by performing the surface activation treatment on the surface of the metal layer, the adhesion with the composition layer (film) provided on the surface can be improved. It is preferable to perform the surface activation treatment on a part or the whole of the composition layer (resin layer) after exposure. In this way, by performing the surface activation treatment on the surface of the composition layer, it is possible to improve the adhesion with the metal layer or the resin layer provided on the surface that has been surface-activated.
  • the composition layer when performing negative development, etc., when the composition layer is cured, it is less likely to be damaged by the surface treatment, and adhesion is likely to be improved.
  • the surface activation treatment can be carried out, for example, by the method described in paragraph 0415 of WO 2021/112189, the contents of which are incorporated herein by reference.
  • the rewiring layer A forming step may further include a connection pad forming step after the lamination step.
  • the preferred embodiment of the connection pad to be formed is as described above.
  • the connection pad formation step can be performed using any method known in the art without any particular restrictions, and examples of such methods include forming a resist layer as necessary, forming a connection pad by plating or the like, and then peeling off the resist layer.
  • the method for manufacturing a semiconductor package of the present invention can include a carrier wafer bonding step of bonding a carrier wafer to a semiconductor package being manufactured, and a carrier wafer peeling step of peeling off the bonded carrier wafer.
  • a carrier wafer bonding step of bonding a carrier wafer to a semiconductor package being manufactured and a carrier wafer peeling step of peeling off the bonded carrier wafer.
  • a carrier wafer is bonded to a semiconductor die to form a sealing layer on the carrier wafer, and a redistribution layer A is formed on the sealing layer in a redistribution layer A formation process.
  • the carrier wafer In order to join another semiconductor die, the carrier wafer can be peeled off from the sealing layer and, if necessary, a new carrier wafer can be bonded to the surface of the redistribution layer A, thereby inverting the side on which the carrier wafer is present.
  • the carrier wafer peeling step and the carrier wafer bonding step can be carried out by a known method.
  • the carrier wafer any known wafer can be used without any particular limitation.
  • the method for manufacturing a semiconductor die of the present invention may further include a conductive portion forming step of forming the above-mentioned conductive portion.
  • the conductive portion forming step may be performed, for example, between the sealing layer forming step and the redistribution layer A forming step, or may be performed after the redistribution layer A forming step.
  • the conductive portion forming step is performed, for example, by forming holes in the sealing layer using a laser or the like, and filling the holes with a conductor by plating or the like.
  • the holes may be through holes or blind holes. In forming the holes, residues of the sealing layer and the like generated during processing may be removed by a known desmear process or the like.
  • any method known in the art can be used without any particular limitation.
  • an inspection step may be further included for inspecting the surface condition, electrical continuity, insulating property, and presence or absence of voids of the rewiring layer A formed.
  • any method known in the art can be used without any particular limitation.
  • the method for manufacturing a semiconductor package of the present invention further includes a connection portion forming step of forming a conductive connection portion on a surface of the rewiring layer A other than the surface in contact with the sealing layer.
  • Preferred aspects of the conductive connecting portion are the same as the preferred aspects of the conductive connecting portion of the semiconductor package of the present invention.
  • any method known in the art can be used without any particular limitation.
  • the method for manufacturing a semiconductor package of the present invention may further include a step of bonding another semiconductor die to a surface of the rewiring layer A other than the surface in contact with the sealing layer.
  • the other semiconductor die is preferably connected to the redistribution layer A via the aforementioned conductive portions formed in the encapsulation layer.
  • Preferred aspects of the other semiconductor dies are similar to the preferred aspects of the other semiconductor dies in the semiconductor package of the present invention.
  • at least one of heating and pressure may be applied.
  • any method for bonding the other semiconductor die any method known in the art may be used without particular limitation.
  • the method for manufacturing a semiconductor package of the present invention includes a step of joining the conductive connecting portion and a substrate.
  • the substrate is preferably connected to the redistribution layer A via a conductive connection.
  • Preferred embodiments of the substrate are similar to those of the substrate of the semiconductor die of the present invention.
  • At least one of heating and pressure may be applied when bonding the substrates.
  • any method known in the art may be used without particular limitation.
  • FIG. 6 is a schematic cross-sectional view showing an example of a method for manufacturing a semiconductor package according to the present invention.
  • a layer 46 formed from a curable resin composition is formed on a carrier wafer 62, and two semiconductor dies 28 are disposed on the layer 46 formed from the curable resin composition.
  • the details of the curable resin composition are as described above.
  • the layer 46 formed from the curable resin composition may be cured or may not be cured.
  • FIG. 6(b) shows the state in which the semiconductor die 28 is embedded in the encapsulant 30 in the laminate shown in FIG. 6(a).
  • the surface of the semiconductor die 28 is exposed.
  • the encapsulant 30 is formed, for example, by applying the above-mentioned curable resin composition so as to embed the semiconductor die and then curing it.
  • the surface of the semiconductor die 28 may be exposed by a polishing process, or may be filled with the encapsulant 30 so as to be exposed.
  • FIG. 6C is a schematic cross-sectional view of a state in which a layer including an insulating pattern A12 and a conductive pattern A14 is formed on the laminate shown in FIG. 6B.
  • an insulating pattern A12 is formed by the above-mentioned film formation process, exposure process, development process and heating process, and then a conductive pattern A14 is formed by the above-mentioned metal layer formation process, thereby obtaining the laminate shown in FIG. 6(c).
  • the insulating pattern A12 includes a via structure
  • the conductive pattern A14 is included as a via pattern.
  • the taper angle in the via structure of the insulating pattern A12 can be adjusted to 70 to 110° by appropriately setting the composition of the negative photosensitive resin composition for forming the insulating pattern A12, the exposure illuminance in the exposure step, the exposure amount, the numerical aperture of the stepper, the development conditions in the development step, the developer, and the like.
  • FIG. 6D is a schematic cross-sectional view of the laminate shown in FIG. 6C in which a layer including an insulating pattern A12 and a conductive pattern A14 is further formed.
  • the laminate shown in Fig. 6(c) is formed with an insulating pattern A12 by the above-mentioned film formation step, exposure step, development step, and heating step, and then a conductive pattern A14 is formed by the above-mentioned metal layer formation step, to obtain the laminate shown in Fig. 6(d).
  • the newly formed conductive pattern A14 in Fig. 6(d) can be, for example, a pattern including a line and space pattern.
  • FIG. 6( e ) is a schematic cross-sectional view of the laminate shown in FIG. 6( d ) in a state where a layer including an insulating pattern A 12 and a conductive pattern A 14 is further formed, and then a conductive pad 16 is formed.
  • the rewiring layer A can be formed by laminating the insulating pattern A12 and the conductive pattern A14 and forming the conductive pad 16 as necessary.
  • the laminate shown in FIG. 6E is subjected to a connection forming step and a substrate bonding step, and the carrier wafer 62 is peeled off, thereby obtaining the semiconductor package shown in FIG.
  • FIG. 7 is a schematic cross-sectional view showing an example of a method for manufacturing a semiconductor package according to the present invention.
  • an encapsulation layer having a semiconductor die 28 embedded in an encapsulant 30 is formed on a carrier wafer 62, and a rewiring layer A including an insulating pattern A12, a conductive pattern A14 and a conductive pad 16 is formed on the surface of the encapsulation layer where the semiconductor die 28 is exposed.
  • the laminate shown in FIG. 7(a) can be obtained by a method similar to the method for producing the laminate shown in FIG.
  • FIG. 7B is a schematic cross-sectional view of the laminate shown in FIG. 7A after a conductive through via 36, an insulating layer 44, and another conductive pad 40 have been formed.
  • the laminate shown in Figure 7 (b) is obtained by adhering a second carrier wafer 64 to the surface of the redistribution layer A opposite the sealing layer, peeling off the carrier wafer 62, forming an insulating layer 44 on the surface of the sealing layer opposite the surface on which the redistribution layer A is formed, and then forming a conductive through via 36 by a conductive portion formation process to form another conductive pad 40.
  • FIG. 7C is a schematic cross-sectional view of the laminate shown in FIG. 7B after another conductive pad 40 has been formed and another semiconductor die 38 has been bonded thereto. Thereafter, the second carrier wafer 64 is peeled off from the laminate shown in FIG. 7(c), the third carrier wafer is bonded to another semiconductor die 38 as necessary, a connection forming process and a substrate bonding process are performed on the redistribution layer A, and the third carrier wafer is peeled off as necessary to obtain the semiconductor package described in FIG. 5.
  • the negative photosensitive resin composition (composition) is described in detail below.
  • the composition any known composition used for forming an insulating pattern can be used without any particular limitation.
  • the composition contains at least one resin selected from the group consisting of heterocycle-containing polymers and their precursors (hereinafter, also referred to as a "specific resin"), and it is more preferable that the composition contains a polyimide or a polyimide precursor.
  • the imidization rate of the polyimide precursor is preferably less than 50%.
  • the imidization rate of the polyimide is preferably 50% or more. The imidization rate will be described in detail later.
  • the heterocycle-containing polymer is preferably a resin containing an imide ring structure or an oxazole ring structure in the main chain structure.
  • the term "main chain” refers to the relatively longest bonding chain in a resin molecule, and the term “side chain” refers to any other bonding chain.
  • the heterocycle-containing polymer include polyimide, polybenzoxazole, and polyamideimide.
  • the precursor of the heterocycle-containing polymer refers to a resin that undergoes a change in chemical structure due to an external stimulus to become a heterocycle-containing polymer, and is preferably a resin that undergoes a change in chemical structure due to heat to become a heterocycle-containing polymer, and more preferably a resin that undergoes a ring-closing reaction due to heat to form a ring structure to become a heterocycle-containing polymer.
  • the precursor of the heterocycle-containing polymer include a polyimide precursor, a polybenzoxazole precursor, and a polyamideimide precursor.
  • the composition preferably contains, as the specific resin, at least one resin selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, and polyamideimide precursor.
  • the composition preferably contains a polyimide or a polyimide precursor as the specific resin.
  • the specific resin preferably has a polymerizable group, and more preferably contains a radically polymerizable group.
  • the composition preferably contains a radical polymerization initiator, more preferably contains a radical polymerization initiator and a radical crosslinking agent. If necessary, the composition may further contain a sensitizer. For example, a negative photosensitive film is formed from such a composition.
  • the polymerizable group include a group having an ethylenically unsaturated bond, an epoxy group, an oxetanyl group, and a benzoxazolyl group, and the group having an ethylenically unsaturated bond is preferred.
  • Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group.
  • (meth)acryloxy group, (meth)acrylamide group, vinylphenyl group, and maleimide group are preferred, and from the viewpoint of reactivity, (meth)acryloyl group is more preferred.
  • vinylphenyl group and maleimide group are preferred.
  • the specific resin may also have a polarity conversion group such as an acid-decomposable group.
  • the composition preferably contains a photoacid generator. From such a composition, for example, a chemically amplified positive-type photosensitive film or negative-type photosensitive film is formed.
  • the specific resin is preferably a resin having at least one repeating unit selected from the group consisting of a repeating unit represented by formula (4-1) and a repeating unit represented by formula (4-2).
  • X 1 is a tetravalent organic group
  • Y 1 is a divalent organic group
  • R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group.
  • X1 represents an organic group having 4 or more carbon atoms
  • Y1 represents an organic group having 4 or more carbon atoms
  • each R1 independently represents a structure containing a polymerizable group
  • n and m independently represent an integer of 0 to 4.
  • -X1- X1 has 4 or more carbon atoms, preferably 4 to 50 carbon atoms, and more preferably 4 to 40 carbon atoms.
  • X1 preferably represents an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4) below.
  • V-1 is an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4)
  • the chemical resistance and flatness of the cured product are improved.
  • X1 is an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4), it is possible to obtain effects such as suppressing the generation of development residues, lowering the dielectric constant of the cured product, and reducing the thermal expansion coefficient.
  • R 1 and X1 each independently represent a hydrogen atom, an alkyl group or a halogenated alkyl group.
  • R 1 X2 and R 1 X3 each independently represent a hydrogen atom or a substituent, and R 1 X2 and R 1 X3 may be bonded to form a ring structure.
  • R X1 are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and further preferably a methyl group or a trifluoromethyl group.
  • the halogenated alkyl group refers to an alkyl group in which at least one hydrogen atom is substituted with a halogen atom. As the halogen atom, F or Cl is preferable, and F is more preferable.
  • R 1 X2 and R 1 X3 each independently represent a hydrogen atom.
  • R X2 and R X3 are bonded to form a ring structure
  • the structure formed by bonding R X2 and R X3 is preferably a single bond, -O- or -C(R) 2 -, more preferably -O- or -C(R) 2 -, and even more preferably -O-.
  • R represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom, an alkyl group or an aryl group, and more preferably a hydrogen atom.
  • X 1 is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-1)
  • X 1 is preferably a group represented by the following formula (V-1-1).
  • * represents a bonding site to the four carbonyl groups to which X 1 in formula (4-1) is bonded
  • n1 represents an integer of 0 to 5, and is also preferably an integer of 1 to 5.
  • the hydrogen atoms in the following structure may be further substituted with known substituents such as a hydrocarbon group.
  • X 1 is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-2), X 1 is preferably a group represented by formula (V-2-1) or formula (V-2-2) below, and from the viewpoint of lowering the amine value in the resin, it is preferably a group represented by formula (V-2-2).
  • a bond crossing a side of a ring structure means substituting any of the hydrogen atoms in the ring structure.
  • L X1 represents a single bond or -O-
  • * represents a bonding site with the four carbonyl groups to which X 1 in formula (4-1) is bonded.
  • R X1 are as described above.
  • the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.
  • X 1 is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-3)
  • X 1 is preferably a group represented by formula (V-3-1) or formula (V-3-2) below, and from the viewpoint of lowering the dielectric constant of the cured product, it is preferably a group represented by formula (V-3-2).
  • * represents a bonding site with the four carbonyl groups to which X 1 in formula (4-1) is bonded.
  • R X2 and R X3 are as described above.
  • the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.
  • X 1 is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-4)
  • X 1 is preferably a group represented by formula (V-4-1) below.
  • * represents a bonding site to the four carbonyl groups to which X 1 in formula (4-1) is bonded
  • n1 represents an integer of 0 to 5.
  • the hydrogen atoms in the structure below may be further substituted with a known substituent such as a hydrocarbon group. However, it is also preferable that none of the hydrogen atoms in the structure represented by (V-4-1) is substituted.
  • X1 may be a tetracarboxylic acid residue remaining after removal of the anhydride groups from the tetracarboxylic dianhydride described in paragraphs 0055 to 0057 of JP-A-2023-003421.
  • X1 does not contain an imide bond in the structure. Furthermore, it is preferable that X1 does not contain a urethane bond, a urea bond or an amide bond in the structure.
  • R N is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, and even more preferably a hydrogen atom.
  • X 1 does not contain an imide bond, a urethane bond, a urea bond, or an amide bond, and it is more preferable that X 1 does not contain an imide bond, a urethane bond, a urea bond, an amide bond, or an ester bond.
  • X1 may be a structure represented by the following formula (X-2), or a structure in which a hydrogen atom of a group represented by X2 in the structure represented by (X-2) or a hydrogen atom of a group represented by L3 is substituted with a group represented by R1 in formula (4-1).
  • X2 each independently represents a trivalent linking group
  • L3 represents a divalent linking group
  • * represents a bonding site to another structure.
  • X2 is exemplified by a linear or branched aliphatic group, a cyclic aliphatic group, and an aromatic group, or a group in which two or more of these are linked by a single bond or a linking group.
  • a linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group in which two or more of these are combined by a single bond or a linking group is preferred, and an aromatic group having 6 to 20 carbon atoms, or a group in which two or more aromatic groups having 6 to 20 carbon atoms are combined by a single bond or a linking group is more preferred.
  • the alkylene group is preferably an alkylene group having 1 to 20 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, and even more preferably an alkylene group having 1 to 4 carbon atoms.
  • the halogenated alkylene group is preferably a halogenated alkylene group having 1 to 20 carbon atoms, more preferably a halogenated alkylene group having 1 to 10 carbon atoms, and even more preferably a halogenated alkylene group having 1 to 4 carbon atoms.
  • Examples of the halogen atom in the halogenated alkylene group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferred.
  • the halogenated alkylene group may have a hydrogen atom or all of the hydrogen atoms may be substituted with halogen atoms, but it is preferred that all of the hydrogen atoms are substituted with halogen atoms.
  • preferred halogenated alkylene groups include a (ditrifluoromethyl)methylene group.
  • the arylene group is preferably a phenylene group or a naphthylene group, more preferably a phenylene group, and further preferably a 1,3-phenylene group or a 1,4-phenylene group.
  • X2 is preferably derived from a tricarboxylic acid compound in which at least one carboxy group may be halogenated.
  • the halogenation is preferably chlorination.
  • a compound having three carboxy groups is called a tricarboxylic acid compound.
  • two carboxy groups may be converted into acid anhydrides.
  • the tricarboxylic acid compound which may be halogenated include branched aliphatic, cyclic aliphatic or aromatic tricarboxylic acid compounds. These tricarboxylic acid compounds may be used alone or in combination of two or more.
  • X2 does not contain an imide structure in the structure. Furthermore, it is preferable that X2 does not contain a urethane bond, a urea bond or an amide bond in the structure. Furthermore, it is preferable that X2 does not contain an ester bond in the structure. Among these, it is preferable that X2 does not contain an imide structure, a urethane bond, a urea bond, or an amide bond, and it is more preferable that X2 does not contain an imide structure, a urethane bond, a urea bond, an amide bond, or an ester bond.
  • tricarboxylic acid compounds containing a linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group combining two or more of these groups with a single bond or a linking group are preferred, and tricarboxylic acid compounds containing an aromatic group having 6 to 20 carbon atoms, or a group combining two or more aromatic groups having 6 to 20 carbon atoms with a single bond or a linking group are more preferred.
  • tricarboxylic acid compounds include 1,2,3-propanetricarboxylic acid, 1,3,5-pentanetricarboxylic acid, citric acid, trimellitic acid, 2,3,6-naphthalenetricarboxylic acid, and compounds in which phthalic acid (or phthalic anhydride) and benzoic acid are linked via a single bond, -O-, -CH2- , -C( CH3 ) 2- , -C( CF3 ) 2- , -SO2- , or a phenylene group.
  • These compounds may be compounds in which two carboxy groups are anhydridized (e.g., trimellitic anhydride) or compounds in which at least one carboxy group is halogenated (e.g., trimellitic anhydride chloride).
  • L 3 is exemplified by a linear or branched aliphatic group, a cyclic aliphatic group, an aromatic group, or a group in which two or more of these are linked by a single bond or a linking group, and is preferably a linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group in which two or more of these are combined by a single bond or a linking group, and more preferably an aromatic group having 6 to 20 carbon atoms, or a group in which two or more aromatic groups having 6 to 20 carbon atoms are combined by a single bond or a linking group.
  • the halogenated alkylene group is preferably a halogenated alkylene group having 1 to 20 carbon atoms, more preferably a halogenated alkylene group having 1 to 10 carbon atoms, and even more preferably a halogenated alkylene group having 1 to 4 carbon atoms.
  • Examples of the halogen atom in the halogenated alkylene group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferred.
  • the halogenated alkylene group may have a hydrogen atom or all of the hydrogen atoms may be substituted with halogen atoms, but it is preferred that all of the hydrogen atoms are substituted with halogen atoms.
  • preferred halogenated alkylene groups include a (ditrifluoromethyl)methylene group.
  • the arylene group is preferably a phenylene group or a naphthylene group, more preferably a phenylene group, and further preferably a 1,3-phenylene group or a 1,4-phenylene group.
  • X1 may be a structure represented by the following formula (X-3), or a structure in which a hydrogen atom of a group represented by X2 or a hydrogen atom of a group represented by L3 in the structure represented by (X-3) is substituted with a group represented by R1 in formula (4-1).
  • X2 's each independently represent a trivalent linking group
  • L3 represents a divalent linking group
  • * represents a bonding site to another structure.
  • preferred embodiments of X2 and L3 are the same as those of X2 and L3 in formula (X-2).
  • Y 1 has 4 or more carbon atoms, preferably 4 to 50 carbon atoms, and more preferably 4 to 40 carbon atoms.
  • Y 1 may be a group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the above formulae (V-1) to (V-4).
  • V-1 formula 1
  • V-4 formula 4-1
  • Y 1 is an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4)
  • the chemical resistance and flatness of the cured product are improved.
  • Y1 is a group containing a structure obtained by removing two or more hydrogen atoms from the structure represented by formula (V-1)
  • Y1 is preferably a group represented by the following formula (V-1-2).
  • * represents the bonding site to the two nitrogen atoms to which Y1 in formula (4-1) is bonded
  • n1 represents an integer of 1 to 5.
  • the hydrogen atoms in the following structure may be further substituted with known substituents such as a hydrocarbon group.
  • Y 1 is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-2), Y 1 is preferably a group represented by formula (V-2-3) or formula (V-2-4) below, and from the viewpoint of decreasing the dielectric constant of the cured product, a group represented by formula (V-2-4) is preferable.
  • L X1 represents a single bond or -O-, and * represents a bonding site with the two nitrogen atoms to which Y 1 is bonded in formula (4-1).
  • R X1 are as described above.
  • the hydrogen atoms may be further substituted with known substituents such as hydrocarbon groups.
  • Y1 is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-3)
  • Y1 is preferably a group represented by formula (V-3-3) or formula (V-3-4) below, and from the viewpoint of decreasing the dielectric constant of the cured product, a group represented by formula (V-3-3) is preferable.
  • * represents the bonding site with the two nitrogen atoms to which Y1 in formula (4-1) is bonded.
  • the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.
  • Y1 is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-4)
  • Y1 is preferably a group represented by the following formula (V-4-2) or (V-4-3).
  • * represents the bonding site to the two nitrogen atoms to which Y1 in formula (4-1) is bonded
  • n1 represents an integer of 0 to 5.
  • An embodiment in which n1 is 0 is also one of the preferred embodiments of the present invention.
  • the hydrogen atoms in the following structures may be further substituted with known substituents such as a hydrocarbon group.
  • Y 1 may be a group described in paragraphs 0042 to 0053 of JP-A No. 2023-003421.
  • Y1 does not contain an imide bond in the structure. It is also preferred that Y1 does not contain a urethane bond, a urea bond or an amide bond in the structure. Furthermore, it is preferable that Y1 does not contain an ester bond in the structure.
  • Y1 does not contain an imide bond, a urethane bond, a urea bond, or an amide bond, and it is more preferable that Y1 does not contain an imide bond, a urethane bond, a urea bond, an amide bond, or an ester bond.
  • X1 and Y1 in formula (4-1) are each an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4) above.
  • the preferred aspects of these groups are as described above.
  • R 1 and R 2 in formula (4-1) each independently represent a hydrogen atom or a monovalent organic group.
  • the monovalent organic group preferably contains a linear or branched alkyl group, a cyclic alkyl group, an aromatic group, or a polyalkyleneoxy group.
  • at least one of R 1 and R 2 contains two or more polymerizable groups.
  • the polymerizable group is a group capable of undergoing a crosslinking reaction by the action of heat, radicals, etc., and is preferably a radically polymerizable group.
  • the polymerizable group examples include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group.
  • a group having an ethylenically unsaturated bond is preferable.
  • Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (for example, a vinylphenyl group), a (meth)acrylamide group, a (meth)acryloyloxy group, and a group represented by the following formula (III), and the group represented by the following formula (III) is preferred.
  • R 200 represents a hydrogen atom, a methyl group, an ethyl group or a methylol group, and is preferably a hydrogen atom or a methyl group.
  • * represents a bonding site with another structure.
  • R 201 represents an alkylene group having 2 to 12 carbon atoms, —CH 2 CH(OH)CH 2 —, a cycloalkylene group or a polyalkyleneoxy group.
  • R 201 examples include alkylene groups such as ethylene group, propylene group, trimethylene group, tetramethylene group, pentamethylene group, hexamethylene group, octamethylene group, and dodecamethylene group, 1,2-butanediyl group, 1,3-butanediyl group, -CH 2 CH(OH)CH 2 -, and polyalkyleneoxy groups, of which alkylene groups such as ethylene group and propylene group, -CH 2 CH(OH)CH 2 -, cyclohexyl group, and polyalkyleneoxy groups are more preferred, and alkylene groups such as ethylene group and propylene group, or polyalkyleneoxy groups are even more preferred.
  • alkylene groups such as ethylene group, propylene group, trimethylene group, tetramethylene group, pentamethylene group, hexamethylene group, octamethylene group, and dodecamethylene group, 1,2-butanediyl group, 1,3-but
  • the polyalkyleneoxy group refers to a group in which two or more alkyleneoxy groups are directly bonded.
  • the alkylene groups in the multiple alkyleneoxy groups contained in the polyalkyleneoxy group may be the same or different.
  • the arrangement of the alkyleneoxy groups in the polyalkyleneoxy group may be a random arrangement, an arrangement having blocks, or an arrangement having a pattern such as alternating.
  • the number of carbon atoms in the alkylene group (including the number of carbon atoms of the substituent, when the alkylene group has a substituent) is preferably 2 or more, more preferably 2 to 10, even more preferably 2 to 6, even more preferably 2 to 5, still more preferably 2 to 4, even more preferably 2 or 3, and particularly preferably 2.
  • the alkylene group may have a substituent, and preferred examples of the substituent include an alkyl group, an aryl group, and a halogen atom.
  • the number of alkyleneoxy groups contained in the polyalkyleneoxy group (the number of repeating polyalkyleneoxy groups) is preferably 2-20, more preferably 2-10, and even more preferably 2-6.
  • the polyalkyleneoxy group is preferably a polyethyleneoxy group, a polypropyleneoxy group, a polytrimethyleneoxy group, a polytetramethyleneoxy group, or a group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, more preferably a polyethyleneoxy group or a polypropyleneoxy group, and even more preferably a polyethyleneoxy group.
  • the ethyleneoxy groups and the propyleneoxy groups may be arranged randomly, may be arranged in blocks, or may be arranged in a pattern such as alternating. The preferred embodiment of the number of repetitions of the ethyleneoxy group in these groups is as described above.
  • the polyimide precursor when R 1 is a hydrogen atom or when R 2 is a hydrogen atom, the polyimide precursor may form a counter salt with a tertiary amine compound having an ethylenically unsaturated bond.
  • a tertiary amine compound having an ethylenically unsaturated bond is N,N-dimethylaminopropyl methacrylate.
  • R 1 and R 2 may be a polarity conversion group such as an acid-decomposable group.
  • the acid-decomposable group is not particularly limited as long as it is decomposed by the action of an acid to generate an alkali-soluble group such as a phenolic hydroxy group or a carboxy group, but an acetal group, a ketal group, a silyl group, a silyl ether group, a tertiary alkyl ester group, etc. are preferred, and from the viewpoint of exposure sensitivity, an acetal group or a ketal group is more preferred.
  • the acid-decomposable group examples include a tert-butoxycarbonyl group, an isopropoxycarbonyl group, a tetrahydropyranyl group, a tetrahydrofuranyl group, an ethoxyethyl group, a methoxyethyl group, an ethoxymethyl group, a trimethylsilyl group, a tert-butoxycarbonylmethyl group, a trimethylsilyl ether group, etc. From the viewpoint of exposure sensitivity, an ethoxyethyl group or a tetrahydrofuranyl group is preferred.
  • the polyimide precursor has fluorine atoms in its structure.
  • the fluorine atom content in the polyimide precursor is preferably 10% by mass or more, and 20% by mass or less.
  • the polyimide precursor may be copolymerized with an aliphatic group having a siloxane structure.
  • Specific examples include those using bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. as the diamine.
  • R 1 is preferably a group represented by formula (R-1).
  • L 1 represents a linking group having a valence of a1+1
  • a 1 represents a polymerizable group
  • a1 represents an integer of 1 or more
  • * represents a bonding site with X 1 or Y 1 in formula (1-1).
  • L1 is preferably a group represented by the following formula (L-2).
  • R N represents a hydrogen atom or a monovalent organic group, when a1 is 1, Lx represents a single bond or a divalent linking group, when a1 is 2 or more, Lx represents an a1+1 valent linking group, a1 represents an integer of 1 or more, * represents a bonding site to another structure in X1 or Y1 in formula (1-1), and # represents a bonding site to A1 in formula (R-1).
  • R N is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom, an alkyl group or a phenyl group, and still more preferably a hydrogen atom.
  • Lx is preferably an alkylene group, more preferably an alkylene group having 1 to 10 carbon atoms, even more preferably an alkylene group having 1 to 4 carbon atoms, and particularly preferably a methylene group.
  • Lx is preferably a hydrocarbon group, a heterocyclic group, or a group represented by a combination thereof, more preferably a saturated aliphatic hydrocarbon group having 2 to 20 carbon atoms, and even more preferably a saturated aliphatic hydrocarbon group having 3 to 15 carbon atoms.
  • a1 has the same meaning as a1 in formula (R-1).
  • a 1 represents a polymerizable group. Preferred embodiments of the polymerizable group are the same as those of the polymerizable group contained in the resin described above.
  • A1 is preferably a (meth)acryloxy group, a maleimide group or a vinylphenyl group, more preferably a maleimide group or a vinylphenyl group from the viewpoint of decreasing the dielectric tangent of the cured product, and more preferably a (meth)acryloxy group from the viewpoint of reactivity.
  • a 1 in formula (R-1) is a vinylphenyl group and L 1 is a group represented by formula (L-2-1).
  • L and X2 represent a hydrocarbon group, and a1 represents an integer of 1 or more.
  • L and X2 are preferably a saturated aliphatic hydrocarbon group.
  • L X2 is preferably an alkylene group, more preferably an alkylene group having 1 to 10 carbon atoms, still more preferably an alkylene group having 1 to 4 carbon atoms, and particularly preferably a methylene group.
  • a1 has the same meaning as a1 in formula (R-1).
  • a 1 in formula (R-1) is a maleimide group
  • L 1 is a group represented by formula (L-2)
  • L X is an aromatic group or an aliphatic saturated hydrocarbon group having 4 or more carbon atoms.
  • the aromatic group may be either an aromatic hydrocarbon group or an aromatic heterocyclic group, with an aromatic hydrocarbon group being preferred.
  • the aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 10 carbon atoms, and more preferably an aromatic hydrocarbon group having 6 carbon atoms.
  • Examples of the heteroatom in the aromatic heterocyclic group include an oxygen atom, a nitrogen atom, and a sulfur atom.
  • the number of heteroatoms in the aromatic heterocyclic group is preferably 1 or 2.
  • the aromatic heterocyclic group is preferably a 5-membered or 6-membered ring containing the above-mentioned heteroatom. Furthermore, the aromatic heterocyclic group may be condensed with another aromatic heterocyclic group or another aromatic hydrocarbon ring group.
  • the aliphatic saturated hydrocarbon group having 4 or more carbon atoms may be any of a linear, branched, or cyclic structure, or a structure represented by a combination thereof.
  • the aliphatic saturated hydrocarbon group having 4 or more carbon atoms preferably has 4 to 20 carbon atoms, and more preferably has 5 to 10 carbon atoms.
  • a1 is preferably an integer of 1 to 4, and more preferably an integer of 1 to 2.
  • an embodiment in which a1 is 1 is also one of the preferred embodiments of the present invention.
  • the number of ester bonds contained in formula (R-1) is preferably 1 or 0.
  • n is preferably 1 or 2, and more preferably 2.
  • polyimide precursor used in the present invention is not particularly limited in type, but preferably contains the repeating unit represented by the above formula (4-1).
  • the polyimide precursor may contain one type of repeating unit represented by formula (4-1), or may contain two or more types. It may also contain a structural isomer of the repeating unit represented by formula (4-1). The polyimide precursor may contain other types of repeating units in addition to the repeating unit of formula (4-1).
  • One embodiment of the polyimide precursor of the present invention is one in which the content of the repeating unit represented by formula (4-1) is 50 mol% or more of all repeating units.
  • the total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%.
  • all repeating units in the polyimide precursor except for the terminals may be repeating units represented by formula (4-1).
  • the cyclization rate (imidization rate) of the polyimide precursor is preferably less than 50%, more preferably 40% or less, even more preferably 30% or less, and even more preferably 20% or less.
  • the lower limit of the cyclization rate is not particularly limited, and may be 0%.
  • the cyclization rate is measured, for example, by the following method.
  • the infrared absorption spectrum of the polyimide precursor is measured to determine the peak intensity P1 near 1377 cm ⁇ 1 , which is an absorption peak derived from the imide structure.
  • the polyimide precursor is heat-treated at 350° C.
  • the weight average molecular weight (Mw) of the polyimide precursor is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, and even more preferably 15,000 to 40,000.
  • the number average molecular weight (Mn) of the polyimide precursor is preferably 2,000 to 40,000, more preferably 3,000 to 30,000, and even more preferably 4,000 to 20,000.
  • the polyimide precursor has a molecular weight dispersity of preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more.
  • the upper limit of the molecular weight dispersity of the polyimide precursor is not particularly specified, but is, for example, preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less.
  • the dispersity of molecular weight is a value calculated by weight average molecular weight/number average molecular weight.
  • the weight average molecular weight, number average molecular weight, and dispersity of at least one polyimide precursor are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple polyimide precursors as one resin are each within the above ranges.
  • the polyimide used in the present invention may be an alkali-soluble polyimide, or may be a polyimide that is soluble in a developer containing an organic solvent as a main component.
  • the alkali-soluble polyimide refers to a polyimide that dissolves at 0.1 g or more in 100 g of a 2.38 mass % aqueous tetramethylammonium solution at 23° C., and from the viewpoint of pattern formability, a polyimide that dissolves at 0.5 g or more is preferable, and a polyimide that dissolves at 1.0 g or more is more preferable.
  • the upper limit of the dissolution amount is not particularly limited, but it is preferably 100 g or less.
  • the polyimide is preferably a polyimide having a plurality of imide structures in the main chain.
  • the polyimide contains fluorine atoms.
  • the fluorine atom is preferably contained, for example, in R 132 in the repeating unit represented by formula (4-2) or R 131 in the repeating unit represented by formula (4-2), and more preferably contained as a fluorinated alkyl group in R 132 in the repeating unit represented by formula (4) or R 131 in the repeating unit represented by formula (4-2).
  • the amount of fluorine atoms relative to the total mass of the polyimide is preferably 5% by mass or more and 20% by mass or less.
  • the polyimide contains a silicon atom.
  • the silicon atom is preferably contained in Y 1 in the repeating unit represented by formula (4-2) described later, and more preferably contained in Y 1 in the repeating unit represented by formula (4-1) described later as an organically modified (poly)siloxane structure described later.
  • the silicon atom or the organic modified (poly)siloxane structure may be contained in a side chain of the polyimide, but is preferably contained in the main chain of the polyimide.
  • the amount of silicon atoms relative to the total mass of the polyimide is preferably 1 mass % or more and 20 mass % or less.
  • the polyimide preferably has an ethylenically unsaturated bond.
  • the polyimide may have an ethylenically unsaturated bond at the end of the main chain or in a side chain, but preferably in the side chain.
  • the ethylenically unsaturated bond is preferably radically polymerizable.
  • the ethylenically unsaturated bond is preferably contained in X 1 or Y 1 in the repeating unit represented by formula (4-2), and more preferably contained in X 1 or RY 1 as a group having an ethylenically unsaturated bond.
  • the amount of ethylenically unsaturated bonds relative to the total mass of the polyimide is preferably 0.0001 to 0.1 mol/g, and more preferably 0.0005 to 0.05 mol/g.
  • the polyimide may have a polymerizable group other than the group having an ethylenically unsaturated bond.
  • the polymerizable group other than the group having an ethylenically unsaturated bond include an epoxy group, a cyclic ether group such as an oxetanyl group, an alkoxymethyl group such as a methoxymethyl group, and a methylol group.
  • the polymerizable group other than the group having an ethylenically unsaturated bond is preferably included in, for example, R 131 in the repeating unit represented by formula (4) described below.
  • the amount of polymerizable groups other than groups having ethylenically unsaturated bonds relative to the total mass of the polyimide is preferably 0.0001 to 0.1 mol/g, and more preferably 0.001 to 0.05 mol/g.
  • the polyimide may have a polarity conversion group such as an acid-decomposable group.
  • the acid-decomposable group in the polyimide is the same as the acid-decomposable group described in R 1 and R 2 in the above formula (4-1), and preferred embodiments are also the same.
  • the polarity conversion group is contained, for example, in R 1 or R 2 in the repeating unit represented by formula (4-2) described later, or at the terminal of the polyimide.
  • the acid value of the polyimide is preferably 30 mgKOH/g or more, more preferably 50 mgKOH/g or more, and even more preferably 70 mgKOH/g or more.
  • the acid value is preferably 500 mgKOH/g or less, more preferably 400 mgKOH/g or less, and even more preferably 200 mgKOH/g or less.
  • the acid value of the polyimide is preferably from 1 to 35 mgKOH/g, more preferably from 2 to 30 mgKOH/g, and even more preferably from 5 to 20 mgKOH/g.
  • the acid value is measured by a known method, for example, the method described in JIS K 0070:1992.
  • the acid group contained in the polyimide is preferably an acid group having a pKa of 0 to 10, more preferably 3 to 8, from the viewpoint of achieving both storage stability and developability.
  • pKa is the equilibrium constant Ka of a dissociation reaction in which a hydrogen ion is released from an acid, expressed as its negative common logarithm pKa.
  • pKa is a value calculated using ACD/ChemSketch (registered trademark) unless otherwise specified.
  • ACD/ChemSketch registered trademark
  • pKa the value listed in "Revised 5th Edition Chemistry Handbook: Basics” edited by the Chemical Society of Japan may be referred to.
  • the acid group is a polyacid, such as phosphoric acid
  • the pKa is the first dissociation constant.
  • the polyimide preferably contains at least one type selected from the group consisting of a carboxy group and a phenolic hydroxy group, and more preferably contains a phenolic hydroxy group.
  • the polyimide preferably has a phenolic hydroxy group.
  • the polyimide may have a phenolic hydroxy group at the end of the main chain or on a side chain.
  • the phenolic hydroxy group is preferably contained in, for example, R 132 or R 131 in the repeating unit represented by formula (4-2).
  • the amount of the phenolic hydroxy group relative to the total mass of the polyimide is preferably 0.1 to 30 mol/g, and more preferably 1 to 20 mol/g.
  • the polyimide used in the present invention is not particularly limited as long as it is a polymeric compound having an imide structure, but it is preferable that it contains a repeating unit represented by the above formula (4-2).
  • the polyimide has fluorine atoms in its structure.
  • the content of fluorine atoms in the polyimide is preferably 10% by mass or more, and more preferably 20% by mass or less.
  • the polyimide may be copolymerized with an aliphatic group having a siloxane structure.
  • diamine components include bis(3-aminopropyl)tetramethyldisiloxane and bis(p-aminophenyl)octamethylpentasiloxane.
  • the main chain ends of the polyimide are blocked with a terminal blocking agent such as a monoamine, an acid anhydride, a monocarboxylic acid, a monoacid chloride compound, or a monoactive ester compound.
  • a terminal blocking agent such as a monoamine, an acid anhydride, a monocarboxylic acid, a monoacid chloride compound, or a monoactive ester compound.
  • monoamine compounds include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy -5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-amino
  • the imidization rate of the polyimide (also referred to as the "ring closure rate") is preferably 50% or more, more preferably 70% or more, and even more preferably 90% or more. There is no particular upper limit to the imidization rate, and it is sufficient if it is 100% or less.
  • the imidization rate is measured by the method described above.
  • the polyimide may contain repeating units represented by the above formula (4-2) in which all of the repeating units have the same combination of R 1 and R 2 , or may contain repeating units represented by the above formula (4-2) containing two or more different combinations of R 1 and R 2.
  • the polyimide may contain other types of repeating units in addition to the repeating units represented by the above formula (4-2). Examples of other types of repeating units include the repeating units represented by the above formula (4-1), etc.
  • Polyimides can be synthesized, for example, by reacting tetracarboxylic dianhydride with diamine (partially substituted with a terminal blocking agent that is a monoamine) at low temperature, by reacting tetracarboxylic dianhydride (partially substituted with a terminal blocking agent that is an acid anhydride, monoacid chloride compound, or monoactive ester compound) with diamine at low temperature, by obtaining a diester from tetracarboxylic dianhydride with alcohol and then reacting it with diamine (partially substituted with a terminal blocking agent that is a monoamine) in the presence of a condensing agent, by obtaining a diester from tetracarboxylic dianhydride with alcohol and then converting the remaining dicarboxylic acid into an acid chloride and reacting it with diamine (partially substituted with a terminal blocking agent that is a monoamine), or by using a method in which a polyimide precursor is obtained and then completely
  • the weight average molecular weight (Mw) of the polyimide is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, and even more preferably 15,000 to 40,000. By making the weight average molecular weight 5,000 or more, the folding resistance of the film after curing can be improved. In order to obtain an organic film having excellent mechanical properties (e.g., breaking elongation), the weight average molecular weight is particularly preferably 15,000 or more.
  • the number average molecular weight (Mn) of the polyimide is preferably from 2,000 to 40,000, more preferably from 3,000 to 30,000, and even more preferably from 4,000 to 20,000.
  • the polyimide preferably has a molecular weight dispersity of 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more.
  • the upper limit of the polyimide molecular weight dispersity is not particularly limited, but is preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less.
  • the weight average molecular weight, number average molecular weight, and dispersity of at least one of the polyimides are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple polyimides as one resin are each within the above ranges.
  • Polybenzoxazole precursor examples include compounds described in paragraphs 0073 to 0095 of WO 2022/145355. The above descriptions are incorporated herein by reference.
  • polybenzoxazole examples include compounds described in paragraphs 0101 to 0108 of WO 2022/145355. The above descriptions are incorporated herein by reference.
  • polyamide-imide precursor examples include compounds described in paragraphs 0104 to 0119 of WO 2022/145355. The above descriptions are incorporated herein by reference.
  • polyamide-imide examples include the compounds described in paragraphs 0125 to 0138 of WO 2022/145355. The above descriptions are incorporated herein by reference.
  • polyimide precursor or the like is produced, for example, by the method described in paragraphs 0134 to 0136 of WO 2022/145355. The above description is incorporated herein by reference.
  • the content of the specific resin in the composition is preferably 20% by mass or more, more preferably 30% by mass or more, even more preferably 40% by mass or more, and even more preferably 50% by mass or more, based on the total solid content of the composition.
  • the content of the resin in the composition is preferably 99.5% by mass or less, more preferably 99% by mass or less, even more preferably 98% by mass or less, even more preferably 97% by mass or less, and even more preferably 95% by mass or less, based on the total solid content of the composition.
  • the composition may contain only one type of specific resin, or may contain two or more types. When two or more types are contained, the total amount is preferably within the above range.
  • the composition comprises at least two resins.
  • the composition may contain a total of two or more types of the specific resin and the other resin described below, or may contain two or more types of the specific resin, but it is preferable that the composition contains two or more types of the specific resin.
  • the composition contains, for example, two or more polyimide precursors having different dianhydride-derived structures (X 1 in the above formula (4-1)).
  • the composition may contain the above-mentioned specific resin and another resin different from the specific resin (hereinafter, simply referred to as "another resin").
  • other resins include phenol resins, polyamides, epoxy resins, polysiloxanes, resins containing a siloxane structure, (meth)acrylic resins, (meth)acrylamide resins, urethane resins, butyral resins, styryl resins, polyether resins, and polyester resins.
  • phenol resins polyamides
  • epoxy resins polysiloxanes
  • resins containing a siloxane structure resins containing a siloxane structure
  • (meth)acrylic resins eth)acrylamide resins
  • urethane resins urethane resins
  • butyral resins ethyral resins
  • styryl resins polyether resins
  • polyester resins polyester resins.
  • the coatability of the composition and the solvent resistance of the pattern (cured product) can be improved.
  • the content of the other resins is preferably 0.01 mass% or more, more preferably 0.05 mass% or more, even more preferably 1 mass% or more, still more preferably 2 mass% or more, even more preferably 5 mass% or more, and even more preferably 10 mass% or more, based on the total solid content of the composition.
  • the content of the other resins is preferably 80 mass % or less, more preferably 75 mass % or less, even more preferably 70 mass % or less, still more preferably 60 mass % or less, and even more preferably 50 mass % or less, relative to the total solid content of the composition.
  • the content of the other resin may be low.
  • the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, even more preferably 5% by mass or less, and even more preferably 1% by mass or less, based on the total solid content of the composition.
  • the lower limit of the content is not particularly limited, and may be 0% by mass or more.
  • the composition may contain only one type of other resin, or may contain two or more types. When two or more types are contained, the total amount is preferably within the above range.
  • the composition preferably contains a polymerizable compound.
  • the polymerizable compound may include a radical crosslinking agent or other crosslinking agents.
  • the composition preferably comprises a radical crosslinker.
  • the radical crosslinking agent is a compound having a radical polymerizable group.
  • the radical polymerizable group is preferably a group containing an ethylenically unsaturated bond.
  • Examples of the group containing an ethylenically unsaturated bond include a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group.
  • a (meth)acryloyl group, a (meth)acrylamide group, and a vinylphenyl group are preferred, and from the viewpoint of reactivity, a (meth)acryloyl group is more preferred.
  • the radical crosslinking agent is preferably a compound having one or more ethylenically unsaturated bonds, more preferably a compound having two or more ethylenically unsaturated bonds.
  • the radical crosslinking agent may have three or more ethylenically unsaturated bonds.
  • As the compound having two or more ethylenically unsaturated bonds a compound having 2 to 15 ethylenically unsaturated bonds is preferable, a compound having 2 to 10 ethylenically unsaturated bonds is more preferable, and a compound having 2 to 6 ethylenically unsaturated bonds is even more preferable.
  • the composition contains a compound having two ethylenically unsaturated bonds and the above compound having three or more ethylenically unsaturated bonds.
  • the molecular weight of the radical crosslinking agent is preferably 2,000 or less, more preferably 1,500 or less, and even more preferably 900 or less.
  • the lower limit of the molecular weight of the radical crosslinking agent is preferably 100 or more.
  • radical crosslinking agents include unsaturated carboxylic acids (e.g., acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) and their esters and amides, preferably esters of unsaturated carboxylic acids and polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and polyvalent amine compounds.
  • unsaturated carboxylic acids e.g., acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.
  • esters and amides preferably esters of unsaturated carboxylic acids and polyhydric alcohol compounds
  • amides of unsaturated carboxylic acids and polyvalent amine compounds amides of unsaturated carboxylic acids and polyvalent amine compounds.
  • addition reaction products of unsaturated carboxylic acid esters or amides having nucleophilic substituents such as hydroxyl groups, amino groups, and sul
  • addition reaction products of unsaturated carboxylic acid esters or amides having electrophilic substituents such as isocyanate groups and epoxy groups with monofunctional or polyfunctional alcohols, amines, and thiols, and substitution reaction products of unsaturated carboxylic acid esters or amides having eliminable substituents such as halogeno groups and tosyloxy groups with monofunctional or polyfunctional alcohols, amines, and thiols are also suitable.
  • the radical crosslinking agent is preferably a compound having a boiling point of 100°C or higher under normal pressure.
  • Examples of compounds having a boiling point of 100°C or higher under normal pressure include the compounds described in paragraph 0203 of WO 2021/112189, the contents of which are incorporated herein by reference.
  • radical crosslinking agents other than those mentioned above include the radical polymerizable compounds described in paragraphs 0204 to 0208 of WO 2021/112189, the contents of which are incorporated herein by reference.
  • the radical crosslinking agent is preferably dipentaerythritol triacrylate (commercially available products include KAYARAD D-330 (manufactured by Nippon Kayaku Co., Ltd.)), dipentaerythritol tetraacrylate (commercially available products include KAYARAD D-320 (manufactured by Nippon Kayaku Co., Ltd.) and A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)), dipentaerythritol penta(meth)acrylate (commercially available products include KAYARAD D-310 (manufactured by Nippon Kayaku Co., Ltd.)), dipentaerythritol hexa(meth)acrylate (commercially available products include KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd.) and A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.)), or a
  • radical crosslinking agents include, for example, SR-494, a tetrafunctional acrylate with four ethyleneoxy chains, SR-209, 231, and 239, which are difunctional methacrylates with four ethyleneoxy chains (all manufactured by Sartomer Corporation), DPCA-60, a hexafunctional acrylate with six pentyleneoxy chains, TPA-330, a trifunctional acrylate with three isobutyleneoxy chains (all manufactured by Nippon Kayaku Co., Ltd.), and urethane oligomers.
  • SR-494 a tetrafunctional acrylate with four ethyleneoxy chains
  • SR-209, 231, and 239 which are difunctional methacrylates with four ethyleneoxy chains (all manufactured by Sartomer Corporation)
  • DPCA-60 a hexafunctional acrylate with six pentyleneoxy chains
  • TPA-330 a trifunctional acrylate with three isobutyleneoxy chains (all manufactured by Nippon Kayaku Co., Ltd.)
  • esters examples include UAS-10 and UAB-140 (all manufactured by Nippon Paper Industries Co., Ltd.), NK Ester M-40G, NK Ester 4G, NK Ester M-9300, NK Ester A-9300, and UA-7200 (all manufactured by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, and AI-600 (all manufactured by Kyoeisha Chemical Co., Ltd.), and Blenmar PME400 (manufactured by NOF Corp.).
  • radical crosslinking agents urethane acrylates such as those described in JP-B-48-041708, JP-A-51-037193, JP-B-02-032293, and JP-B-02-016765, and urethane compounds having an ethylene oxide skeleton described in JP-B-58-049860, JP-B-56-017654, JP-B-62-039417, and JP-B-62-039418 are also suitable.
  • radical crosslinking agents compounds having an amino structure or sulfide structure in the molecule, as described in JP-A-63-277653, JP-A-63-260909, and JP-A-01-105238, can also be used.
  • the radical crosslinking agent may be a radical crosslinking agent having an acid group such as a carboxy group or a phosphate group.
  • the radical crosslinking agent having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and more preferably a radical crosslinking agent in which an acid group is provided by reacting an unreacted hydroxy group of an aliphatic polyhydroxy compound with a non-aromatic carboxylic anhydride.
  • a radical crosslinking agent in which an acid group is provided by reacting an unreacted hydroxy group of an aliphatic polyhydroxy compound with a non-aromatic carboxylic anhydride, in which the aliphatic polyhydroxy compound is pentaerythritol or dipentaerythritol.
  • examples of commercially available products include polybasic acid modified acrylic oligomers manufactured by Toagosei Co., Ltd., such as M-510 and M-520.
  • the acid value of the radical crosslinking agent having an acid group is preferably 0.1 to 300 mgKOH/g, more preferably 1 to 100 mgKOH/g. If the acid value of the radical crosslinking agent is within the above range, the agent has excellent handling properties during manufacturing and developability. In addition, the agent has good polymerizability. The acid value is measured in accordance with the description of JIS K 0070:1992.
  • the radical crosslinking agent a radical crosslinking agent having at least one bond selected from the group consisting of a urea bond and a urethane bond (hereinafter, also referred to as "crosslinking agent U") is also preferred.
  • a urethane bond is a bond represented by *--O--C(.dbd.O)-- NR.sub.N --*, where R.sub.N represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom.
  • R.sub.N represents a hydrogen atom or a monovalent organic group
  • * represents a bonding site with a carbon atom.
  • the crosslinking agent U may have only one urea bond or one urethane bond, may have one or more urea bonds and one or more urethane bonds, may have no urethane bonds but two or more urea bonds, or may have no urea bonds but two or more urethane bonds.
  • the total number of urea bonds and urethane bonds in the crosslinking agent U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2.
  • the number of urea bonds in crosslinking agent U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2.
  • the number of urethane bonds in the crosslinking agent U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2.
  • the radical polymerizable group in the crosslinking agent U is not particularly limited, and examples thereof include a vinyl group, an allyl group, a (meth)acryloyl group, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, and a maleimide group. Of these, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, or a maleimide group is preferred, and a (meth)acryloxy group is more preferred.
  • the crosslinking agent U has two or more radically polymerizable groups, the structures of the respective radically polymerizable groups may be the same or different.
  • the number of radical polymerizable groups in the crosslinking agent U may be only one or may be two or more, and is preferably 1 to 10, more preferably 1 to 6, and particularly preferably 1 to 4.
  • the radically polymerizable group value (mass of compound per mole of radically polymerizable group) in the crosslinking agent U is preferably 150 to 400 g/mol.
  • the lower limit of the radically polymerizable group value is more preferably 200 g/mol or more, even more preferably 210 g/mol or more, even more preferably 220 g/mol or more, even more preferably 230 g/mol or more, still more preferably 240 g/mol or more, and particularly preferably 250 g/mol or more.
  • the upper limit of the radically polymerizable group value is more preferably 350 g/mol or less, further preferably 330 g/mol or less, and particularly preferably 300 g/mol or less.
  • the polymerizable group value of the crosslinking agent U is preferably from 210 to 400 g/mol, and more preferably from 220 to 400 g/mol.
  • the crosslinking agent U preferably has a structure represented by the following formula (U-1).
  • R U1 is a hydrogen atom or a monovalent organic group
  • A is -O- or -NR N -
  • R N is a hydrogen atom or a monovalent organic group
  • Z U1 is an m-valent organic group
  • Z U2 is an (n+1)-valent organic group
  • X is a radical polymerizable group
  • n is an integer of 1 or more
  • m is an integer of 1 or more.
  • R U1 is preferably a hydrogen atom, an alkyl group or an aromatic hydrocarbon group, and more preferably a hydrogen atom.
  • R 3 N is preferably a hydrogen atom, an alkyl group or an aromatic hydrocarbon group, and more preferably a hydrogen atom.
  • the above-mentioned hydrocarbon group is preferably a hydrocarbon group having 20 or less carbon atoms, more preferably a hydrocarbon group having 18 or less carbon atoms, and even more preferably a hydrocarbon group having 16 or less carbon atoms.
  • the above-mentioned hydrocarbon group includes a saturated aliphatic hydrocarbon group, an aromatic hydrocarbon group, or a group represented by a combination thereof.
  • R N represents a hydrogen atom or a monovalent organic group, and is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, and even more preferably a hydrogen atom or a methyl group.
  • the hydrocarbon group includes the same as those exemplified for ZU1 , and preferred embodiments are also the same.
  • X is not particularly limited, and examples thereof include a vinyl group, an allyl group, a (meth)acryloyl group, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, and a maleimide group.
  • a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, or a maleimide group is preferable, and a (meth)acryloxy group is more preferable.
  • n is preferably an integer of 1 to 10, more preferably an integer of 1 to 4, even more preferably 1 or 2, and particularly preferably 1.
  • m is preferably an integer of 1 to 10, more preferably an integer of 1 to 4, and even more preferably 1 or 2.
  • the cross-linking agent U has at least one of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group.
  • the hydroxy group may be an alcoholic hydroxy group or a phenolic hydroxy group, but is preferably an alcoholic hydroxy group.
  • the alkyleneoxy group is preferably an alkyleneoxy group having 2 to 20 carbon atoms, more preferably an alkyleneoxy group having 2 to 10 carbon atoms, even more preferably an alkyleneoxy group having 2 to 4 carbon atoms, still more preferably an ethyleneoxy group or a propyleneoxy group, and particularly preferably an ethylene group.
  • the alkyleneoxy group may be contained as a polyalkyleneoxy group in the crosslinking agent U. In this case, the number of repetitions of the alkyleneoxy group is preferably 2 to 10, and more preferably 2 to 6.
  • R represents a hydrogen atom or a monovalent substituent, preferably a hydrogen atom or a hydrocarbon group, and more preferably a hydrogen atom, an alkyl group, or an aromatic hydrocarbon group.
  • the crosslinking agent U may have, in the molecule, two or more structures selected from the group consisting of a hydroxy group, an alkyleneoxy group (when a polyalkyleneoxy group is formed, the group is a polyalkyleneoxy group), an amide group, and a cyano group.
  • the hydroxy group, alkyleneoxy group, amide group and cyano group may be present at any position of the crosslinking agent U. From the viewpoint of chemical resistance, however, it is also preferable that the crosslinking agent U is such that at least one selected from the group consisting of the hydroxy group, alkyleneoxy group, amide group and cyano group and at least one radical polymerizable group contained in the crosslinking agent U are linked via a linking group containing a urea bond or a urethane bond (hereinafter, also referred to as "linking group L2-1").
  • the crosslinking agent U contains only one radically polymerizable group
  • the radically polymerizable group contained in the crosslinking agent U and at least one selected from the group consisting of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group are linked via a linking group containing a urea bond or a urethane bond (hereinafter also referred to as "linking group L2-2").
  • the crosslinking agent U contains an alkyleneoxy group (however, when a polyalkyleneoxy group is constituted, a polyalkyleneoxy group) and has the linking group L2-1 or the linking group L2-2
  • the structure bonded to the side of the alkyleneoxy group (however, when a polyalkyleneoxy group is constituted, a polyalkyleneoxy group) opposite to the linking group L2-1 or the linking group L2-2 is not particularly limited, but is preferably a hydrocarbon group, a radically polymerizable group, or a group represented by a combination thereof.
  • hydrocarbon group a hydrocarbon group having 20 or less carbon atoms is preferable, a hydrocarbon group having 18 or less carbon atoms is more preferable, and a hydrocarbon group having 16 or less carbon atoms is even more preferable.
  • hydrocarbon group a saturated aliphatic hydrocarbon group, an aromatic hydrocarbon group, or a group represented by a bond thereof can be mentioned.
  • a preferred embodiment of the radically polymerizable group is the same as the preferred embodiment of the radically polymerizable group in the crosslinking agent U described above.
  • the structure bonded to the side of the amide group opposite to the linking group L2-1 or the linking group L2-2 is not particularly limited, but is preferably a hydrocarbon group, a radically polymerizable group, or a group represented by a combination thereof.
  • the hydrocarbon group is preferably a hydrocarbon group having 20 or less carbon atoms, more preferably a hydrocarbon group having 18 or less carbon atoms, and even more preferably a hydrocarbon group having 16 or less carbon atoms.
  • examples of the hydrocarbon group include saturated aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups represented by a bond between these groups.
  • a preferred embodiment of the radically polymerizable group is the same as the preferred embodiment of the radically polymerizable group in the crosslinking agent U described above.
  • the carbon atom side of the amide group may be bonded to the linking group L2-1 or the linking group L2-2, or the nitrogen atom side of the amide group may be bonded to the linking group L2-1 or the linking group L2-2.
  • the crosslinking agent U has a hydroxy group.
  • the crosslinking agent U preferably contains an aromatic group.
  • the aromatic group is preferably directly bonded to a urea bond or a urethane bond contained in the crosslinking agent U.
  • the crosslinking agent U contains two or more urea bonds or urethane bonds, it is preferable that one of the urea bonds or urethane bonds is directly bonded to the aromatic group.
  • the aromatic group may be an aromatic hydrocarbon group or an aromatic heterocyclic group, or may have a structure in which these form a condensed ring, but is preferably an aromatic hydrocarbon group.
  • the aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 30 carbon atoms, more preferably an aromatic hydrocarbon group having 6 to 20 carbon atoms, and even more preferably a group in which two or more hydrogen atoms have been removed from a benzene ring structure.
  • the aromatic heterocyclic group is preferably a 5-membered or 6-membered aromatic heterocyclic group.
  • aromatic heterocyclic ring in such an aromatic heterocyclic group examples include pyrrole, imidazole, triazole, tetrazole, pyrazole, furan, thiophene, oxazole, isoxazole, thiazole, pyridine, pyrazine, pyrimidine, pyridazine, triazine, etc. These rings may be further condensed with other rings, such as indole and benzimidazole.
  • the heteroatom contained in the aromatic heterocyclic group is preferably a nitrogen atom, an oxygen atom or a sulfur atom.
  • the aromatic group is preferably contained in a linking group that links two or more radically polymerizable groups and contains a urea bond or a urethane bond, or a linking group that links at least one selected from the group consisting of the above-mentioned hydroxy group, alkyleneoxy group, amide group, and cyano group to at least one radically polymerizable group contained in the crosslinking agent U.
  • the number of atoms (linking chain length) between the urea bond or urethane bond and the radical polymerizable group in the crosslinking agent U is not particularly limited, but is preferably 30 or less, more preferably 2 to 20, and even more preferably 2 to 10.
  • the crosslinking agent U contains two or more urea bonds or urethane bonds in total, when it contains two or more radically polymerizable groups, or when it contains two or more urea bonds or urethane bonds and two or more radically polymerizable groups, the minimum number of atoms (linking chain length) between the urea bond or urethane bond and the radically polymerizable group may be within the above range.
  • the "number of atoms (linking chain length) between a urea bond or a urethane bond and a polymerizable group” refers to the chain of atoms on the path connecting two atoms or groups of atoms to be linked that links these objects with the shortest length (minimum number of atoms).
  • the number of atoms (linking chain length) between the urea bond and the radical polymerizable group (methacryloyloxy group) is 2.
  • the crosslinking agent U is a compound having a structure that does not have an axis of symmetry.
  • the fact that the crosslinking agent U does not have an axis of symmetry means that the compound is a bilaterally asymmetric compound that does not have an axis that would produce an identical molecule to the original molecule by rotating the entire compound.
  • the structural formula of the crosslinking agent U is written on paper, the fact that the crosslinking agent U does not have an axis of symmetry means that the structural formula of the crosslinking agent U cannot be written in a form that has an axis of symmetry. It is believed that since the crosslinking agent U does not have an axis of symmetry, aggregation of the crosslinking agents U within the composition film is suppressed.
  • the molecular weight of the crosslinking agent U is preferably 100-2,000, more preferably 150-1500, and even more preferably 200-900.
  • the method for producing the crosslinking agent U is not particularly limited, but it can be obtained, for example, by reacting a compound having a radical polymerizable compound and an isocyanate group with a compound having at least one of a hydroxy group or an amino group.
  • crosslinking agent U Specific examples of the crosslinking agent U are shown below, but the crosslinking agent U is not limited thereto.
  • a difunctional methacrylate or acrylate in the composition.
  • Specific compounds include triethylene glycol diacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, tetraethylene glycol diacrylate, PEG (polyethylene glycol) 200 diacrylate, PEG 200 dimethacrylate, PEG 600 diacrylate, PEG 600 dimethacrylate, polytetraethylene glycol diacrylate, polytetraethylene glycol dimethacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, neopentyl glycol diacrylate, neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol diacrylate, 1,6-hexyl 1,5-hexyl ...
  • EO ethylene oxide
  • PO propylene oxide
  • PO propylene oxide
  • PO propylene oxide
  • PEG200 diacrylate refers to polyethylene glycol diacrylate with a formula weight of about 200 for the polyethylene glycol chain.
  • the composition can preferably use a monofunctional radical crosslinking agent as the radical crosslinking agent.
  • the monofunctional radical crosslinking agent a compound having a boiling point of 100° C. or more under normal pressure is also preferred in order to suppress volatilization before exposure.
  • the difunctional or higher radical crosslinking agent include allyl compounds such as diallyl phthalate and triallyl trimellitate.
  • the content of the radical crosslinking agent is preferably more than 0% by mass and not more than 60% by mass based on the total solid content of the composition.
  • the lower limit is more preferably 5% by mass or more.
  • the upper limit is more preferably 50% by mass or less, and even more preferably 30% by mass or less.
  • the radical crosslinking agent may be used alone or in combination of two or more. When two or more types are used in combination, it is preferable that the total amount is within the above range.
  • the composition comprises another crosslinking agent different from the radical crosslinkers mentioned above.
  • the other crosslinking agent refers to a crosslinking agent other than the above-mentioned radical crosslinking agent, and is preferably a compound having, in its molecule, a plurality of groups that promote a reaction to form a covalent bond with another compound in the composition or a reaction product thereof upon exposure to light by the above-mentioned photoacid generator or photobase generator, and is preferably a compound having, in its molecule, a plurality of groups that promote a reaction to form a covalent bond with another compound in the composition or a reaction product thereof under the action of an acid or a base.
  • the acid or base is preferably an acid or base generated from a photoacid generator or a photobase generator in the exposure step.
  • Other cross-linking agents include the compounds described in paragraphs 0179 to 0207 of WO 2022/145355, the disclosures of which are incorporated herein by reference.
  • the composition preferably contains a polymerization initiator.
  • the polymerization initiator may be a thermal polymerization initiator or a photopolymerization initiator, but it is particularly preferable to include a photopolymerization initiator.
  • the photopolymerization initiator is preferably a photoradical polymerization initiator.
  • the photoradical polymerization initiator is not particularly limited and can be appropriately selected from known photoradical polymerization initiators. For example, a photoradical polymerization initiator having photosensitivity to light rays in the ultraviolet to visible regions is preferable. Alternatively, it may be an activator that reacts with a photoexcited sensitizer to generate active radicals.
  • the photoradical polymerization initiator preferably contains at least one compound having a molar absorption coefficient of at least about 50 L ⁇ mol ⁇ 1 ⁇ cm ⁇ 1 in a wavelength range of about 240 to 800 nm (preferably 330 to 500 nm).
  • the molar absorption coefficient of the compound can be measured using a known method. For example, it is preferable to measure it using an ultraviolet-visible spectrophotometer (Varian Cary-5 spectrophotometer) at a concentration of 0.01 g/L using ethyl acetate as a solvent.
  • halogenated hydrocarbon derivatives e.g., compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.
  • acylphosphine compounds such as acylphosphine oxides, hexaarylbiimidazoles
  • oxime compounds such as oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, ⁇ -aminoketone compounds such as aminoacetophenones, ⁇ -hydroxyketone compounds such as hydroxyacetophenones, azo compounds, azide compounds, metallocene compounds, organic boron compounds, iron arene complexes, etc.
  • ketone compounds include the compounds described in paragraph 0087 of JP 2015-087611 A, the contents of which are incorporated herein by reference.
  • Kayacure-DETX-S manufactured by Nippon Kayaku Co., Ltd.
  • Nippon Kayaku Co., Ltd. is also preferably used.
  • hydroxyacetophenone compounds, aminoacetophenone compounds, and acylphosphine compounds can be suitably used as photoradical polymerization initiators. More specifically, for example, aminoacetophenone-based initiators described in JP-A-10-291969 and acylphosphine oxide-based initiators described in Japanese Patent No. 4225898 can be used, the contents of which are incorporated herein by reference.
  • ⁇ -Hydroxyketone initiators that can be used include Omnirad 184, Omnirad 1173, Omnirad 2959, Omnirad 127 (all manufactured by IGM Resins B.V.), IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE-2959, and IRGACURE 127 (all manufactured by BASF).
  • Omnirad 907, Omnirad 369, Omnirad 369E, Omnirad 379EG (all manufactured by IGM Resins B.V.), IRGACURE 907, IRGACURE 369, and IRGACURE 379 (all manufactured by BASF) can be used.
  • aminoacetophenone initiator acylphosphine oxide initiator, and metallocene compound
  • aminoacetophenone initiator acylphosphine oxide initiator, and metallocene compound
  • the compounds described in paragraphs 0161 to 0163 of WO 2021/112189 can also be suitably used.
  • the contents of this specification are incorporated herein.
  • an oxime compound is more preferably used as a photoradical polymerization initiator.
  • an oxime compound By using an oxime compound, it becomes possible to more effectively improve the exposure latitude.
  • Oxime compounds are particularly preferred because they have a wide exposure latitude (exposure margin) and also function as a photocuring accelerator.
  • oxime compounds include the compounds described in JP-A-2001-233842, the compounds described in JP-A-2000-080068, the compounds described in JP-A-2006-342166, the compounds described in J. C. S. Perkin II (1979, pp. 1653-1660), the compounds described in J. C. S. Compounds described in Perkin II (1979, pp. 156-162), compounds described in Journal of Photopolymer Science and Technology (1995, pp.
  • Preferred oxime compounds include, for example, compounds having the following structure, 3-(benzoyloxy(imino))butan-2-one, 3-(acetoxy(imino))butan-2-one, 3-(propionyloxy(imino))butan-2-one, 2-(acetoxy(imino))pentan-3-one, 2-(acetoxy(imino))-1-phenylpropan-1-one, 2-(benzoyloxy(imino))-1-phenylpropan-1-one, 3-((4-toluenesulfonyloxy)imino)butan-2-one, and 2-(ethoxycarbonyloxy(imino))-1-phenylpropan-1-one.
  • an oxime compound as a photoradical polymerization initiator.
  • oxime compounds include IRGACURE OXE 01, IRGACURE OXE 02, IRGACURE OXE 03, and IRGACURE OXE 04 (manufactured by BASF), ADEKA OPTOMER N-1919 (manufactured by ADEKA Corporation, photoradical polymerization initiator 2 described in JP 2012-014052 A), TR-PBG-304, TR-PBG-305 (manufactured by Changzhou Strong Electronic New Materials Co., Ltd.), ADEKA ARCLES NCI-730, NCI-831, and ADEKA ARCLES NCI-930 (manufactured by ADEKA Corporation), DFI-091 (manufactured by Daito Chemistry Co., Ltd.), and SpeedCure PDO (SARTOMER Also usable are oxime compounds having the following structure:
  • an oxime compound having a fluorene ring described in paragraphs 0169 to 0171 of WO 2021/112189 an oxime compound having a skeleton in which at least one benzene ring of a carbazole ring is a naphthalene ring, or an oxime compound having a fluorine atom can be used.
  • oxime compounds having a nitro group, oxime compounds having a benzofuran skeleton, and oxime compounds having a hydroxyl group-containing substituent bonded to a carbazole skeleton described in paragraphs 0208 to 0210 of WO 2021/020359 can also be used. The contents of these compounds are incorporated herein by reference.
  • photopolymerization initiators that can be used include the compounds described in paragraphs 0113 to 0117 of JP 2023-058585 A. The disclosures are incorporated herein by reference.
  • the content is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, even more preferably 0.5 to 15% by mass, and even more preferably 1.0 to 10% by mass, based on the total solid content of the composition.
  • Only one type of photopolymerization initiator may be contained, or two or more types may be contained.
  • the total amount is preferably within the above range.
  • the photopolymerization initiator may also function as a thermal polymerization initiator, the crosslinking caused by the photopolymerization initiator may be further promoted by heating in an oven, a hot plate, or the like.
  • the composition may contain a sensitizer.
  • the sensitizer absorbs specific active radiation and becomes electronically excited.
  • the sensitizer in the electronically excited state comes into contact with a thermal radical polymerization initiator, a photoradical polymerization initiator, or the like, and effects such as electron transfer, energy transfer, and heat generation occur.
  • the thermal radical polymerization initiator and the photoradical polymerization initiator undergo a chemical change and are decomposed to generate a radical, an acid, or a base.
  • Usable sensitizers include benzophenone-based, Michler's ketone-based, coumarin-based, pyrazole azo-based, anilino azo-based, triphenylmethane-based, anthraquinone-based, anthracene-based, anthrapyridone-based, benzylidene-based, oxonol-based, pyrazolotriazole azo-based, pyridone azo-based, cyanine-based, phenothiazine-based, pyrrolopyrazole azomethine-based, xanthene-based, phthalocyanine-based, benzopyran-based, indigo-based compounds, and the like.
  • sensitizer examples include Michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal)cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, p-dimethylaminocinnamylidene indanone, and p-dimethylaminobenzylidene indanone.
  • the content of the sensitizer is preferably 0.01 to 20 mass %, more preferably 0.1 to 15 mass %, and even more preferably 0.5 to 10 mass %, based on the total solid content of the composition.
  • the sensitizer may be used alone or in combination of two or more types.
  • the composition may contain a chain transfer agent.
  • the chain transfer agent is defined, for example, in the Third Edition of the Polymer Dictionary (edited by the Society of Polymer Science, 2005), pages 683-684.
  • Examples of the chain transfer agent include compounds having -S-S-, -SO 2 -S-, -N-O-, SH, PH, SiH, and GeH in the molecule, and dithiobenzoate, trithiocarbonate, dithiocarbamate, and xanthate compounds having a thiocarbonylthio group used in RAFT (Reversible Addition Fragmentation Chain Transfer) polymerization.
  • RAFT Reversible Addition Fragmentation Chain Transfer
  • chain transfer agent may be the compound described in paragraphs 0152 to 0153 of WO 2015/199219, the contents of which are incorporated herein by reference.
  • the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the total solid content of the composition.
  • the chain transfer agent may be one type or two or more types. When there are two or more types of chain transfer agents, it is preferable that the total is within the above range.
  • the composition contains two or more types of polymerization initiators.
  • the composition preferably contains a photopolymerization initiator and a thermal polymerization initiator described below, or contains the above-mentioned photoradical polymerization initiator and the above-mentioned photoacid generator.
  • the content of the thermal polymerization initiator is preferably 20 to 70 mass%, and more preferably 30 to 60 mass%, relative to the total content of the photopolymerization initiator and the thermal polymerization initiator.
  • the content of the photoacid generator is preferably 20 to 70 mass%, and more preferably 30 to 60 mass%, relative to the total content of the photopolymerization initiator and the photoacid generator.
  • thermal polymerization initiator examples include a thermal radical polymerization initiator.
  • a thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or promotes a polymerization reaction of a polymerizable compound. By adding a thermal radical polymerization initiator, the polymerization reaction of the resin and the polymerizable compound can be promoted, so that the solvent resistance can be further improved.
  • thermal radical polymerization initiators include the compounds described in paragraphs 0074 to 0118 of JP 2008-063554 A, the contents of which are incorporated herein by reference.
  • thermal polymerization initiator When a thermal polymerization initiator is included, its content is preferably 0.1 to 30 mass% relative to the total solid content of the composition, more preferably 0.1 to 20 mass%, and even more preferably 0.5 to 15 mass%.
  • the composition may contain only one type of thermal polymerization initiator, or may contain two or more types. When two or more types of thermal polymerization initiators are included, it is preferable that the total amount is within the above range.
  • the composition may contain a base generator.
  • the base generator is a compound capable of generating a base by physical or chemical action.
  • Preferred base generators include thermal base generators and photobase generators.
  • the composition when the composition contains a heterocycle-containing polymer precursor, the composition preferably contains a base generator.
  • the thermal base generator in the composition, for example, the cyclization reaction of the precursor can be promoted by heating, and the mechanical properties and chemical resistance of the cured product can be improved, and the performance as an interlayer insulating film for a rewiring layer contained in a semiconductor package can be improved.
  • the base generator may be an ionic base generator or a nonionic base generator.
  • Examples of the base generated from the base generator include secondary amines and tertiary amines.
  • the base generator is not particularly limited, and a known base generator can be used.
  • Examples of known base generators include carbamoyl oxime compounds, carbamoyl hydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzyl carbamate compounds, nitrobenzyl carbamate compounds, sulfonamide compounds, imidazole derivative compounds, amine imide compounds, pyridine derivative compounds, ⁇ -aminoacetophenone derivative compounds, quaternary ammonium salt derivative compounds, iminium salts, pyridinium salts, ⁇ -lactone ring derivative compounds, amine imide compounds, phthalimide derivative compounds, and acyloxyimino compounds.
  • Specific examples of the non-ionic base generator include the compounds described in paragraphs 0249 to 0275 of WO 2022/145355. The above descriptions are incorporated herein by
  • Base generators include, but are not limited to, the following compounds:
  • the molecular weight of the nonionic base generator is preferably 800 or less, more preferably 600 or less, and even more preferably 500 or less.
  • the lower limit is preferably 100 or more, more preferably 200 or more, and even more preferably 300 or more.
  • Specific preferred compounds for the ionic base generator include, for example, the compounds described in paragraphs 0148 to 0163 of WO 2018/038002.
  • ammonium salts include, but are not limited to, the following compounds:
  • iminium salts include, but are not limited to, the following compounds:
  • the base generator is preferably an amine in which the amino group is protected by a t-butoxycarbonyl group, from the viewpoints of storage stability and generating a base by deprotection during curing.
  • Examples of amine compounds protected by a t-butoxycarbonyl group include ethanolamine, 3-amino-1-propanol, 1-amino-2-propanol, 2-amino-1-propanol, 4-amino-1-butanol, 2-amino-1-butanol, 1-amino-2-butanol, 3-amino-2,2-dimethyl-1-propanol, 4-amino-2-methyl-1-butanol, valinol, 3-amino-1,2-propanediol, 2-amino-1,3-propanediol, ol, tyramine, norephedrine, 2-amino-1-phenyl-1,3-propanediol, 2-aminocyclohexanol, 4-aminocyclohexanol, 4-aminocyclohexaneethanol, 4-(2-aminoethyl)cyclohexanol, N-methylethanol
  • the content of the base generator is preferably 0.1 to 50 parts by mass relative to 100 parts by mass of the resin in the composition.
  • the lower limit is more preferably 0.3 parts by mass or more, and even more preferably 0.5 parts by mass or more.
  • the upper limit is more preferably 30 parts by mass or less, even more preferably 20 parts by mass or less, even more preferably 10 parts by mass or less, even more preferably 5 parts by mass or less, and particularly preferably 4 parts by mass or less.
  • the base generator may be used alone or in combination of two or more. When two or more types are used, the total amount is preferably within the above range.
  • the composition preferably includes a solvent.
  • the solvent may be any known solvent.
  • the solvent is preferably an organic solvent.
  • Examples of the organic solvent include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.
  • Esters for example, ethyl acetate, n-butyl acetate, isobutyl acetate, hexyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, ⁇ -butyrolactone, ⁇ -caprolactone, ⁇ -valerolactone, ⁇ -valerolactone, alkyloxyacetates (for example, methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.)), 3-alkyloxypropionic acid alkyl esters (for example,
  • alkyloxypropionic acid alkyl esters include alkyl esters (e.g., methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate, etc.
  • Suitable examples of ethers include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, di
  • ketones include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, 3-methylcyclohexanone, levoglucosenone, and dihydrolevoglucosenone.
  • cyclic hydrocarbons include aromatic hydrocarbons such as toluene, xylene, and anisole, and cyclic terpenes such as limonene.
  • dimethyl sulfoxide is preferred.
  • amides include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-dimethylisobutyramide, 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, N-formylmorpholine, and N-acetylmorpholine.
  • ureas include N,N,N',N'-tetramethylurea and 1,3-dimethyl-2-imidazolidinone.
  • Alcohols include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 1-pentanol, 1-hexanol, benzyl alcohol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, methylphenyl carbinol, n-amyl alcohol, methylamyl alcohol, and diacetone alcohol.
  • the solvent is preferably one selected from methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, ⁇ -butyrolactone, ⁇ -valerolactone, 3-methoxy-N,N-dimethylpropionamide, toluene, dimethyl sulfoxide, ethyl carbitol acetate, butyl carbitol acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, propylene glycol methyl ether acetate, levoglucosenone, and dihydrolevoglucosenone, or a mixed solvent composed of two or more selected therefrom, and more preferably contains at least one solvent selected from
  • An embodiment in which toluene is further added to these combined solvents in an amount of about 1 to 10% by mass based on the total mass of the solvent is also one of the preferred embodiments of the present invention.
  • an embodiment containing ⁇ -valerolactone as a solvent is one of the preferred embodiments of the present invention.
  • the content of ⁇ -valerolactone relative to the total mass of the solvent is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more.
  • the upper limit of the content is not particularly limited and may be 100% by mass.
  • the content may be determined taking into consideration the solubility of components such as the heterocycle-containing polymer contained in the composition, and the like.
  • the solvent preferably contains 60 to 90% by mass of ⁇ -valerolactone and 10 to 40% by mass of dimethyl sulfoxide, more preferably 70 to 90% by mass of ⁇ -valerolactone and 10 to 30% by mass of dimethyl sulfoxide, and even more preferably 75 to 85% by mass of ⁇ -valerolactone and 15 to 25% by mass of dimethyl sulfoxide, relative to the total mass of the solvent.
  • the content of the solvent is preferably an amount that results in a total solids concentration of the composition of 5 to 80 mass%, more preferably an amount that results in a total solids concentration of 5 to 75 mass%, even more preferably an amount that results in a total solids concentration of 10 to 70 mass%, and even more preferably an amount that results in a total solids concentration of 20 to 70 mass%.
  • the content of the solvent may be adjusted according to the desired thickness of the coating film and the coating method. When two or more types of solvents are contained, it is preferable that the total amount is within the above range.
  • the composition preferably contains a metal adhesion improver from the viewpoint of improving adhesion to metal materials used in electrodes, wiring, etc.
  • the metal adhesion improver include a silane coupling agent having an alkoxysilyl group, an aluminum-based adhesion aid, a titanium-based adhesion aid, a compound having a sulfonamide structure, a compound having a thiourea structure, a phosphoric acid derivative compound, a ⁇ -ketoester compound, an amino compound, and the like.
  • silane coupling agent examples include the compounds described in paragraph 0316 of International Publication No. 2021/112189 and the compounds described in paragraphs 0067 to 0078 of JP-A-2018-173573, the contents of which are incorporated herein. It is also preferable to use two or more different silane coupling agents as described in paragraphs 0050 to 0058 of JP-A-2011-128358. It is also preferable to use the following compounds as the silane coupling agent. In the following formula, Me represents a methyl group, and Et represents an ethyl group. In addition, the following R includes a structure derived from a blocking agent in a blocked isocyanate group.
  • the blocking agent may be selected according to the desorption temperature, and examples thereof include alcohol compounds, phenol compounds, pyrazole compounds, triazole compounds, lactam compounds, and active methylene compounds.
  • examples thereof include alcohol compounds, phenol compounds, pyrazole compounds, triazole compounds, lactam compounds, and active methylene compounds.
  • caprolactam and the like are preferred.
  • Commercially available products of such compounds include X-12-1293 (manufactured by Shin-Etsu Chemical Co., Ltd.).
  • silane coupling agents include, for example, vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, N-2-
  • the silane include (aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(a
  • an oligomer type compound having a plurality of alkoxysilyl groups can also be used as the silane coupling agent.
  • examples of such oligomer-type compounds include compounds containing a repeating unit represented by the following formula (S-1).
  • R 1 represents a monovalent organic group
  • R 2 represents a hydrogen atom, a hydroxyl group or an alkoxy group
  • n represents an integer of 0 to 2.
  • R S1 is preferably a structure containing a polymerizable group.
  • Examples of the polymerizable group include a group having an ethylenically unsaturated bond, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group.
  • Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (e.g., a vinylphenyl group), a (meth)acrylamide group, and a (meth)acryloyloxy group.
  • R S2 is preferably an alkoxy group, more preferably a methoxy group or an ethoxy group.
  • n represents an integer of 0 to 2, and is preferably 1.
  • n is 1 or 2 in at least one, more preferably that n is 1 or 2 in at least two, and further preferably that n is 1 in at least two.
  • oligomer type compounds commercially available products can be used, and an example of a commercially available product is KR-513 (manufactured by Shin-Etsu Chemical Co., Ltd.).
  • Aluminum-based adhesion promoter examples include aluminum tris(ethylacetoacetate), aluminum tris(acetylacetonate), and ethylacetoacetate aluminum diisopropylate.
  • metal adhesion improvers that can be used include the compounds described in paragraphs 0046 to 0049 of JP 2014-186186 A and the sulfide-based compounds described in paragraphs 0032 to 0043 of JP 2013-072935 A, the contents of which are incorporated herein by reference.
  • the content of the metal adhesion improver is preferably 0.01 to 30 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the heterocycle-containing polymer. By making the content equal to or greater than the above lower limit, the adhesion between the pattern and the metal layer will be good, and by making the content equal to or less than the above upper limit, the heat resistance and mechanical properties of the pattern will be good. Only one type of metal adhesion improver may be used, or two or more types may be used. When two or more types are used, it is preferable that the total is within the above range.
  • the composition preferably further contains a migration inhibitor.
  • a migration inhibitor for example, when the composition is applied to a metal layer (or metal wiring) to form a film, migration of metal ions derived from the metal layer (or metal wiring) into the film can be effectively suppressed.
  • the migration inhibitor examples include compounds having a heterocycle (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring and 6H-pyran ring, triazine ring), thioureas and compounds having a sulfanyl group, hindered phenol compounds, salicylic acid derivative compounds, and hydrazide derivative compounds.
  • a heterocycle pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring
  • triazole compounds such as 1,2,4-triazole, benzotriazole, 3-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole
  • tetrazole compounds such as 1H-tetrazole, 5-phenyltetrazole, and 5-amino-1H-tetrazole are preferably used.
  • Ion trapping agents that capture anions such as halogen ions can also be used as migration inhibitors.
  • Other migration inhibitors that can be used include the rust inhibitors described in paragraph 0094 of JP 2013-015701 A, the compounds described in paragraphs 0073 to 0076 of JP 2009-283711 A, the compounds described in paragraph 0052 of JP 2011-059656 A, the compounds described in paragraphs 0114, 0116, and 0118 of JP 2012-194520 A, and the compounds described in paragraph 0166 of WO 2015/199219 A, the contents of which are incorporated herein by reference.
  • migration inhibitors include the following compounds:
  • the content of the migration inhibitor is preferably 0.01 to 5.0 mass %, more preferably 0.05 to 2.0 mass %, and even more preferably 0.1 to 1.0 mass %, based on the total solid content of the composition.
  • the migration inhibitor may be one type or two or more types. When two or more types of migration inhibitors are used, it is preferable that the total is within the above range.
  • the composition preferably contains a polymerization inhibitor, such as a phenolic compound, a quinone compound, an amino compound, an N-oxyl free radical compound, a nitro compound, a nitroso compound, a heteroaromatic ring compound, or a metal compound.
  • a polymerization inhibitor such as a phenolic compound, a quinone compound, an amino compound, an N-oxyl free radical compound, a nitro compound, a nitroso compound, a heteroaromatic ring compound, or a metal compound.
  • polymerization inhibitor examples include the compounds described in paragraph 0310 of WO 2021/112189, p-hydroquinone, o-hydroquinone, 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxyl free radical, phenoxazine, 1,4,4-trimethyl-2,3-diazabicyclo[3.2.2]non-2-ene-N,N-dioxide, etc.
  • the contents of this document are incorporated herein by reference.
  • the content of the polymerization inhibitor is preferably 0.01 to 20 mass % relative to the total solid content of the composition, more preferably 0.02 to 15 mass %, and even more preferably 0.05 to 10 mass %.
  • the polymerization inhibitor may be one type or two or more types. When two or more types of polymerization inhibitors are used, it is preferable that the total is within the above range.
  • the composition may contain at least one compound selected from the group consisting of a compound having a urea bond (urea compound), a compound having a carbodiimide structure (carbodiimide compound), and a compound having an isourea bond (isourea compound) (hereinafter also referred to as a "urea compound, etc.”).
  • urea compound a compound having a urea bond
  • carbodiimide compound a compound having a carbodiimide structure
  • isourea compound hereinafter also referred to as a "urea compound, etc.”
  • the composition further contains a compound having a urea bond.
  • the urea compounds and the like referred to here do not include the above-mentioned polymerizable compounds and compounds corresponding to silane coupling agents. Examples of the urea compound include the compounds described in paragraphs 0334 to 0339 of WO 2022/070730.
  • urea compounds include, but are not limited to, dicyclohexylurea, diisopropylurea, dicyclohexylcarbodiimide, diisopropylcarbodiimide, dicyclohexylisourea, and diisopropylisourea.
  • the total content of the urea compounds and the like is preferably from 0.1 to 10.0 parts by mass, more preferably from 0.5 to 8.0 parts by mass, and even more preferably from 1.0 to 6.0 parts by mass, based on 100 parts by mass of the heterocycle-containing polymer.
  • the urea compounds and the like may be used alone or in combination of two or more. When two or more bases are used in combination in the base-containing treatment liquid, it is preferable that the total content thereof is within the above range.
  • the composition also preferably contains a compound (light absorber) whose absorbance at the exposure wavelength decreases upon exposure to light.
  • a compound light absorber
  • Examples of the light absorber include the compounds described in paragraphs 0159 to 0183 of WO 2022/202647 and the compounds described in paragraphs 0088 to 0108 of JP 2019-206689 A. The contents of which are incorporated herein by reference.
  • a photochromic compound is contained as a light absorbing agent.
  • a photochromic compound is a compound whose absorption spectrum changes as a result of a change in the molecular geometric structure due to the absorption of light. Specific examples of the photochromic compound are shown below, but the present invention is not limited thereto.
  • the content of the light absorber relative to the total solid content of the composition is not particularly limited, but is preferably 0.1 to 20 mass%, more preferably 0.5 to 10 mass%, and even more preferably 1 to 5 mass%.
  • the composition may contain various additives, such as surfactants, higher fatty acid derivatives, thermal polymerization initiators, inorganic particles, ultraviolet absorbers, organic titanium compounds, antioxidants, photoacid generators, aggregation inhibitors, phenolic compounds, other polymer compounds, plasticizers, and other auxiliaries (e.g., defoamers, flame retardants, etc.), as necessary, within the scope of the effects of the present invention.
  • additives such as surfactants, higher fatty acid derivatives, thermal polymerization initiators, inorganic particles, ultraviolet absorbers, organic titanium compounds, antioxidants, photoacid generators, aggregation inhibitors, phenolic compounds, other polymer compounds, plasticizers, and other auxiliaries (e.g., defoamers, flame retardants, etc.), as necessary, within the scope of the effects of the present invention.
  • auxiliaries e.g., defoamers, flame retardants, etc.
  • the total content is preferably 3% by mass or less of the solid content of the composition.
  • the viscosity of the composition can be adjusted by the solid content concentration of the composition. From the viewpoint of the coating film thickness, it is preferably 1,000 mm 2 /s to 12,000 mm 2 /s, more preferably 2,000 mm 2 /s to 10,000 mm 2 /s, and even more preferably 2,500 mm 2 /s to 8,000 mm 2 /s. Within the above range, it is easy to obtain a coating film with high uniformity. If it is 1,000 mm 2 /s or more, it is easy to apply it with a film thickness required for, for example, a rewiring insulating film, and if it is 12,000 mm 2 /s or less, a coating film with excellent coating surface condition is obtained.
  • the water content of the composition is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If the water content is less than 2.0%, the storage stability of the composition is improved. Methods for maintaining the moisture content include adjusting the humidity during storage and reducing the porosity of the container during storage.
  • the metal content of the composition is preferably less than 5 ppm by mass (parts per million), more preferably less than 1 ppm by mass, and even more preferably less than 0.5 ppm by mass.
  • metals include sodium, potassium, magnesium, calcium, iron, copper, chromium, nickel, etc., but metals contained as complexes of organic compounds and metals are excluded. When multiple metals are contained, it is preferable that the total of these metals is within the above range.
  • methods for reducing metal impurities unintentionally contained in the composition include selecting raw materials with low metal content as the raw materials constituting the composition, filtering the raw materials constituting the composition, lining the inside of the apparatus with polytetrafluoroethylene or the like and performing distillation under conditions that minimize contamination as much as possible.
  • the content of halogen atoms is preferably less than 500 mass ppm, more preferably less than 300 mass ppm, and even more preferably less than 200 mass ppm from the viewpoint of wiring corrosion.
  • those present in the form of halogen ions are preferably less than 5 mass ppm, more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm.
  • Halogen atoms include chlorine atoms and bromine atoms.It is preferable that the total of chlorine atoms and bromine atoms, or chlorine ions and bromine ions, is within the above range.
  • a preferred method for adjusting the content of halogen atoms is ion exchange treatment.
  • a conventionally known container can be used as the container for the composition.
  • the container it is also preferable to use a multi-layer bottle whose inner wall is made of six types of six layers of resin, or a bottle with a seven-layer structure made of six types of resin, in order to prevent impurities from being mixed into the raw materials or the composition.
  • An example of such a container is the container described in JP 2015-123351 A.
  • the composition can be prepared by mixing the above-mentioned components.
  • the mixing method is not particularly limited, and the components can be prepared by a conventionally known method. Examples of the mixing method include mixing with a stirring blade, mixing with a ball mill, and mixing by rotating a tank.
  • the temperature during mixing is preferably from 10 to 30°C, more preferably from 15 to 25°C.
  • the filter pore size is, for example, preferably 5 ⁇ m or less, more preferably 1 ⁇ m or less, even more preferably 0.5 ⁇ m or less, and even more preferably 0.1 ⁇ m or less.
  • the material of the filter is preferably polytetrafluoroethylene, polyethylene, or nylon. When the material of the filter is polyethylene, it is more preferable that it is HDPE (high density polyethylene).
  • the filter may be used after being washed in advance with an organic solvent. In the filter filtration process, multiple types of filters may be connected in series or in parallel. When multiple types of filters are used, filters with different pore sizes or materials may be used in combination.
  • an HDPE filter with a pore size of 1 ⁇ m as the first stage and an HDPE filter with a pore size of 0.2 ⁇ m as the second stage may be connected in series.
  • various materials may be filtered multiple times.
  • circulation filtration may be performed.
  • Filtration may also be performed under pressure.
  • the pressure to be applied is, for example, preferably 0.01 MPa or more and 1.0 MPa or less, more preferably 0.03 MPa or more and 0.9 MPa or less, even more preferably 0.05 MPa or more and 0.7 MPa or less, and even more preferably 0.05 MPa or more and 0.5 MPa or less.
  • impurity removal treatment using an adsorbent may be performed.
  • Filter filtration and impurity removal treatment using an adsorbent may be combined.
  • a known adsorbent may be used.
  • inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon may be used.
  • the composition filled in the bottle may be subjected to a degassing step by placing it under reduced pressure.
  • the reaction solution was dropped into a mixture of 1.8 L of methanol and 0.6 L of water, and the mixture was stirred for 15 minutes, after which the polyimide resin was filtered.
  • the resin was reslurried in 1 L of water, filtered, and then reslurried again in 1 L of methanol, filtered, and dried under reduced pressure at 40° C. for 8 hours.
  • the resin dried above was dissolved in 250 g of tetrahydrofuran, 40 g of ion exchange resin (MB-1: manufactured by Organo Corporation) was added, and the mixture was stirred for 4 hours.
  • Polymer 1 is a resin having a repeating unit represented by the following formula. The subscripts in parentheses of the repeating units below represent the molar ratio of each repeating unit. The structure of the repeating unit was determined from 1 H-NMR spectrum. The weight average molecular weight of polymer 1 was 25,000, the number average molecular weight was 10,500, and the imidization rate was 99% or more.
  • Polymer 2 is a resin having a repeating unit represented by the following formula.
  • the subscripts in parentheses of the following repeating units represent the molar ratio of each repeating unit.
  • the weight average molecular weight of polymer 2 was 25,000, the number average molecular weight was 12,500, and the imidization rate was 99% or more.
  • the structure of the repeating unit was determined from the 1 H-NMR spectrum.
  • Polymers 5 to 7 were synthesized in the same manner as for Polymer 2, except that the raw materials used were appropriately changed.
  • Polymer 5 to Polymer 7 are resins having repeating units represented by the following formulas. The structure of each repeating unit was determined from 1 H-NMR spectrum. In the structures below, the subscripts in parentheses indicate the molar ratio of each structure. The weight average molecular weight, number average molecular weight and imidization ratio of these resins are shown in the table below.
  • the polyimide precursor was precipitated in 4 L of water, and the water-polyimide precursor mixture was stirred at a speed of 500 rpm for 15 minutes.
  • the polyimide precursor was obtained by filtration, stirred again in 4 L of water for 30 minutes, and filtered again.
  • the obtained polyimide precursor was dried at 45°C under reduced pressure for 2 days to obtain a polyimide precursor (polymer 3).
  • the weight average molecular weight (Mw) of the obtained polyimide precursor (polymer 3) was 25,000, and the number average molecular weight (Mn) was 10,000. It is assumed that the polyimide precursor (polymer 3) has a structure containing two repeating units represented by the following formula (polymer 3).
  • Polymer 3 had a weight average molecular weight of 25,000, a number average molecular weight of 10,000, and an imidization rate of less than 5%.
  • the polyimide precursor was obtained by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. Next, the obtained polyimide precursor was dried at 45°C under reduced pressure for 2 days to obtain a polyimide precursor (polymer 4).
  • the weight average molecular weight (Mw) of the obtained polyimide precursor (polymer 4) was 25,000, and the number average molecular weight (Mn) was 9,950. It is assumed that the polyimide precursor (polymer 4) has a structure containing two repeating units represented by the following formula (polymer 4). The subscripts in parentheses of the following repeating units represent the molar ratio of each repeating unit contained. Polymer 4 had a weight average molecular weight of 25,000, a number average molecular weight of 9,950, and an imidization rate of less than 5%.
  • the reaction solution obtained was added to 716.2 g of ethanol to produce a precipitate consisting of a crude polymer.
  • the produced crude polymer was filtered off and dissolved in 403.5 g of tetrahydrofuran to obtain a crude polymer solution.
  • the obtained crude polymer solution was dropped into 8470 g of water to precipitate the polymer, and the obtained precipitate was filtered off.
  • the obtained polyimide precursor was then dried at 45° C. under reduced pressure for 2 days to obtain a polyimide precursor (polymer 8).
  • the weight average molecular weight (Mw) of the obtained polyimide precursor (polymer 8) was 25,300, and the number average molecular weight (Mn) was 10,150.
  • polyimide precursor (polymer 8) has a structure containing two repeating units represented by the following formula (polymer 8).
  • the subscripts in parentheses of the following repeating units represent the molar ratio of each repeating unit.
  • the weight average molecular weight of polymer 8 was 25,000, the number average molecular weight was 10,150, and the imidization rate was 20%.
  • Polymers 9 to 15 were synthesized in the same manner as for Polymer 3, except that the raw materials used were appropriately changed.
  • Polymer 9 to Polymer 15 are resins having repeating units represented by the following formulas. The structure of each repeating unit was determined from 1 H-NMR spectrum. In the structures below, the subscripts in parentheses indicate the molar ratio of each structure. The weight average molecular weight, number average molecular weight and imidization ratio of these resins are shown in the table below.
  • each Example the components shown in the following table were mixed to obtain each negative photosensitive resin composition. Specifically, the content of each component shown in the table is the amount (parts by mass) shown in the "parts by mass” column of each column in the table.
  • the obtained negative photosensitive resin composition was filtered under pressure using a polypropylene filter having a pore width of 0.45 ⁇ m.
  • "-" indicates that the composition does not contain the corresponding component.
  • Polymers 1 to 16 Polymers 1 to 16 synthesized above
  • Polymerizable compound 1 Compound having the following structure
  • Polymerizable compound 2 Compound having the following structure (in the following structures, the numbers represent the molar ratio of each structure)
  • Polymerizable compounds 3 to 8 Compounds having the following structures
  • Polymerization initiators 1 to 4 Compounds having the following structure
  • Polymerization initiator 5 Benzoyl peroxide (manufactured by Tokyo Chemical Industry Co., Ltd.)
  • Migration inhibitors 1 to 6 Compounds having the following structures
  • Metal adhesion improvers 1 to 3 Compounds having the following structures
  • Light absorber 1 Compound having the following structure
  • Light absorber 2 1 to 2: Ester of 2,2',3,3'-tetrahydro-3,3,3',3'-tetramethyl-1,1'-spirobi(1H-indene)-5,5',6,6',7,7'hexanol and 1,2-naphthoquinone-(2)-diazo-5-sulfonic acid (NQD (naphthoquinone diazide))
  • Organotitanium compound 1 Compound having the following structure
  • Organotitanium compound 2 TC-750 (manufactured by Matsumoto Fine Chemical)
  • Polymerization inhibitors 1 to 4 Compounds having the following structures
  • Base generators 1 to 3 compounds having the following structures
  • Solvent 1 GBL ( ⁇ -butyrolactone)
  • Solvent 2 NMP (N-methyl-2-pyrrolidone)
  • Solvent 3 DMSO (dimethyl sulfoxide)
  • Solvent 4 EL (ethyl lactate)
  • Solvent 5 ⁇ -valerolactone
  • Solvent 6 3-methoxy-N,N-dimethylpropanamide
  • Solvent 7 Anisole
  • Surfactant 1 BYK-333 (manufactured by BYK Corporation)
  • the resin composition layer on the silicon wafer was exposed using an i-line stepper (Canon: FPR-3000i5) through a mask having a circular mask portion with a diameter of 5 ⁇ m, with the numerical aperture (Na) described in the "Exposure Na” column in the table below, the exposure illuminance described in the "Exposure Illuminance” column in the table, and the exposure amount described in the "Exposure Amount” column in the table. Thereafter, the resist was developed for 15 seconds using cyclopentanone as a developer, and rinsed for 30 seconds using PGMEA as a rinse solution to obtain a precursor pattern of an insulating pattern. Further, it was heated at 230° C. for 3 hours in a nitrogen atmosphere to obtain an insulating pattern.
  • a 50 nm thick Ti layer was formed as a conductive layer in the regions between the insulating patterns and on the insulating patterns by sputtering, and a 200 nm thick Cu layer was formed on the Ti layer by plating. After that, a 2500 nm thick Cu layer (conductive layer) was formed on the Cu layer by plating.
  • the conductive layer was polished using a CMP (Chemical Mechanical Polishing) machine manufactured by Fujikoshi Machinery Co., Ltd., using silica as a slurry for a polishing time of 2.5 minutes at a polishing pressure of 3 psi, exposing an insulating pattern on the surface, a Ti layer formed as a seed layer, and a conductive pattern (via pattern) formed in the region between the insulating patterns.
  • CMP Chemical Mechanical Polishing
  • the insulating pattern and the conductive pattern were cut at a plane including the center of the conductive pattern, and the cross section was polished using a milling device ArBlade5000 (manufactured by Hitachi, Ltd.), and then an SEM image was obtained using an FE-SEM SU-4800 (manufactured by Hitachi, Ltd.) to measure the angle (taper angle) between the bottom surface of the insulating pattern and the side surface of the insulating pattern. The measurement results are shown in the column "Via taper angle (degrees)".
  • the entire surface was exposed to light using an i-line stepper (Canon: FPR-3000i5) with an exposure NA of 0.16, an exposure illuminance of 10,000 W/m 2 , and an exposure amount of 400 mJ/cm 2 , and development, rinsing, and heat treatment were performed in the same manner as in the above-mentioned taper angle measurement, except that the exposure was performed as the entire surface exposure, thereby forming a flat insulating film on the silicon wafer.
  • An insulating pattern and a conductive pattern were further formed on the insulating film by the same method as in the above-mentioned measurement of the taper angle.
  • FIG. 8 A schematic cross-sectional view of the formed laminate is shown in FIG.
  • a first insulating film 202 is formed on a surface of a substrate 200 including a semiconductor die and an encapsulant on which the semiconductor die is exposed, and an insulating layer 208 including wiring having an insulating pattern 204 and a conductive pattern 206 is formed on the surface of the first insulating film 202 opposite to the surface of the substrate 200 including a semiconductor die and an encapsulant on which the semiconductor die is exposed, and a second insulating layer 210 is further formed on the side of the insulating layer 208 including wiring opposite the first insulating layer 202.
  • the cross section of the wiring portion of the obtained laminate was observed with a SEM (scanning electron microscope) after 198 hours, 396 hours, and 594 hours under conditions of 130°C and 85% relative humidity to check for the presence or absence of abnormalities such as cracks, peeling, and voids.
  • the evaluation was performed according to the following evaluation criteria, and the evaluation results are shown in the "uHAST test" column of the table.
  • -Evaluation criteria- A After 594 hours, the cross section of the wiring was observed with a SEM, and no abnormalities such as cracks, peeling, voids, etc. were found.
  • Thermocycle test A laminate similar to that used in the uHAST test was subjected to a temperature cycle test from ⁇ 40° C. to 125° C. using a heat shock tester (Cosmopia S) (manufactured by Hitachi Global Life Solutions, Inc.). At the time points of 750 cycles, 1500 cycles, and 2250 cycles, the cross section of the wiring portion was observed by SEM (scanning electron microscope) to check for the presence or absence of abnormalities such as cracks, peeling, voids, etc. The evaluation was performed according to the following evaluation criteria, and the evaluation results are shown in the "Thermocycle test" column in the table.
  • Example 101 A semiconductor package was produced under the same conditions as in Example 1, except that the number of semiconductor dies in the semiconductor package of Example 1 was changed from one to two. The evaluation results were all the same as in Example 1.
  • the semiconductor package of the present invention exhibits favorable results in all of the uHAST test, HTS test, and thermocycle test.
  • the taper angle is less than 70°. According to this embodiment, it is understood that the results of the HTS test and the thermocycle test are inferior. In the invention according to Comparative Example 2, the taper angle exceeds 110°. It is understood that such an embodiment gives inferior results in the uHAST test and the HTS test.
  • Rewiring layer A 12 Insulation pattern A 14 Conductive pattern A 16 Conductive pad 18 Exposed portion 20 Semiconductor package 22 Sealing layer 24 Conductive connection portion 26 Substrate 28 Semiconductor die 30 Sealing material 32 Electrode 34 Other conductive connection portion 36 Conductive through via 38 Other semiconductor die 40 Other conductive pad 42 Other conductive connection portion 44 Insulating layer 46 Layer formed from a curable resin composition 62 Carrier wafer 64 Second carrier wafer 102 Conductive connection portion 104 Conductive pad 106 Insulating pattern A in the outermost layer of rewiring layer A 108 Conductive pattern A in the outermost layer of rewiring layer A 110 Solder member 112 Pillar 200 Substrate including semiconductor die and encapsulant 202 First insulating film 204 Insulating pattern 206 Conductive pattern 208 Insulating layer including wiring 210 Second insulating layer

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Abstract

La présente invention concerne : un boîtier de semi-conducteur ayant une couche d'étanchéité qui comprend au moins une puce à semi-conducteur et un matériau d'encapsulation, une couche de recâblage A qui est en contact avec au moins l'une des puces à semi-conducteur et est connectée à un circuit desdites puces à semi-conducteur, une section de connexion conductrice qui est connectée à la couche de recâblage A, et un substrat qui est connecté à la section de connexion conductrice, la couche de recâblage A étant formée par empilement d'une couche comprenant des motifs isolants A et un motif conducteur A présent entre les motifs des motifs isolants A, les motifs isolants A ayant une structure de trou d'interconnexion, et l'angle formé entre une surface latérale de la structure de trou d'interconnexion et la surface inférieure des motifs isolants A étant de 70 à 110°; et un procédé de fabrication dudit boîtier.
PCT/JP2024/033256 2023-09-22 2024-09-18 Boîtier de semi-conducteur et procédé de fabrication de boîtier de semi-conducteur Pending WO2025063198A1 (fr)

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US20210057382A1 (en) * 2019-07-17 2021-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and method of forming the same
US20210118788A1 (en) * 2019-10-18 2021-04-22 Samsung Electronics Co., Ltd. Redistribution substrate and semiconductor package including the same
US20210225699A1 (en) * 2020-01-17 2021-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated Circuit Package and Method
WO2022044998A1 (fr) * 2020-08-25 2022-03-03 富士フイルム株式会社 Composition de résine durcissable, produit durci, stratifié, procédé de production de produit durci, dispositif à semi-conducteurs ainsi que précurseur polyimide et procédé de production de celui-ci
WO2022050135A1 (fr) * 2020-09-07 2022-03-10 富士フイルム株式会社 Procédé de fabrication d'objet durci, procédé de fabrication de stratifié, et procédé de fabrication de dispositif à semi-conducteurs
WO2022184661A1 (fr) * 2021-03-04 2022-09-09 Merck Patent Gmbh Matériaux diélectriques à base de bismaléimides à extension amide-imide

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005832A (ja) * 2006-10-06 2007-01-11 Casio Comput Co Ltd 半導体装置
WO2018043467A1 (fr) * 2016-08-31 2018-03-08 富士フイルム株式会社 Composition de résine et son application
WO2020026937A1 (fr) * 2018-08-01 2020-02-06 東レ株式会社 Composition de résine, feuille de résine, film durci, procédé pour la production d'un film durci, dispositif à semi-conducteurs et dispositif d'affichage
US20210057382A1 (en) * 2019-07-17 2021-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and method of forming the same
US20210118788A1 (en) * 2019-10-18 2021-04-22 Samsung Electronics Co., Ltd. Redistribution substrate and semiconductor package including the same
US20210225699A1 (en) * 2020-01-17 2021-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated Circuit Package and Method
WO2022044998A1 (fr) * 2020-08-25 2022-03-03 富士フイルム株式会社 Composition de résine durcissable, produit durci, stratifié, procédé de production de produit durci, dispositif à semi-conducteurs ainsi que précurseur polyimide et procédé de production de celui-ci
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WO2022184661A1 (fr) * 2021-03-04 2022-09-09 Merck Patent Gmbh Matériaux diélectriques à base de bismaléimides à extension amide-imide

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