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WO2025062798A1 - Wafer holding device, bonding device, wafer holding method, and bonding method - Google Patents

Wafer holding device, bonding device, wafer holding method, and bonding method Download PDF

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Publication number
WO2025062798A1
WO2025062798A1 PCT/JP2024/024878 JP2024024878W WO2025062798A1 WO 2025062798 A1 WO2025062798 A1 WO 2025062798A1 JP 2024024878 W JP2024024878 W JP 2024024878W WO 2025062798 A1 WO2025062798 A1 WO 2025062798A1
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WO
WIPO (PCT)
Prior art keywords
substrate
holding
chuck
holding surface
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/024878
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French (fr)
Japanese (ja)
Inventor
祐介 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Publication of WO2025062798A1 publication Critical patent/WO2025062798A1/en
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a substrate holding device, a bonding device, a substrate holding method, and a bonding method.
  • Substrate holding devices that hold substrates are known in the past. Also known is a bonding apparatus that includes an upper substrate holding device that holds a substrate, and a lower substrate holding device that holds a substrate (see, for example, Patent Document 1).
  • Patent Document 1 describes a bonding system that bonds an upper wafer and a lower wafer.
  • the bonding system includes a first holding unit that holds the upper wafer, and a second holding unit that holds the lower wafer.
  • the first holding unit has an upper chuck that holds the upper wafer.
  • the second holding unit has a lower chuck that holds the lower wafer.
  • the upper chuck is deformed convexly downward and the lower chuck is deformed convexly upward, and then the upper and lower wafers are bonded together.
  • the upper wafer is bonded to the lower wafer while the device formation surface of the upper wafer is deformed convexly and the device formation surface of the lower wafer is deformed convexly.
  • the device formation surface of a wafer is usually either convex or concave.
  • the device formation surface of a wafer is, for example, concave
  • the device formation surface is deformed to a convex shape as in the bonding system described in Patent Document 1
  • the wafer deforms from a concave shape to a convex shape, increasing the degree of deformation.
  • the stress applied to the wafer increases. This may have an adverse effect on the characteristics of the elements formed on the wafer.
  • both the holding surface provided below the upper chuck and the holding surface provided above the lower chuck are usually nearly flat.
  • the wafer deforms from a warped state to a flat state, which can add stress to the wafer and adversely affect the characteristics of the elements formed on the wafer.
  • the present invention was made in consideration of the above problems, and its purpose is to provide a substrate holding device, a bonding device, a substrate holding method, and a bonding method that can suppress the application of stress to the substrate.
  • a substrate holding device includes a holding mechanism and a deformation mechanism.
  • the holding mechanism adsorbs and holds a substrate.
  • the deformation mechanism deforms the holding mechanism.
  • the holding mechanism includes a chuck and a base to which the chuck is attached.
  • the chuck has a holding surface that holds one side of the substrate.
  • the base is disposed on the opposite side of the chuck from the holding surface.
  • the deformation mechanism deforms the chuck so that the holding surface can assume both a convex shape in which the center of the holding surface protrudes toward the substrate, and a concave shape that is recessed toward the base.
  • a control unit that controls the deformation mechanism.
  • the control unit acquires warpage information indicating at least the warpage direction of the substrate.
  • the control unit causes the deformation mechanism to deform the chuck so that the holding surface has the convex shape or the concave shape based on the warpage information, and causes the holding mechanism to hold the substrate.
  • the substrate has a front surface and a back surface which is the one surface.
  • the front surface is a device forming surface.
  • the back surface is located opposite the front surface and is a non-device forming surface.
  • the control unit causes the deformation mechanism to deform the chuck so that the holding surface has the concave shape, and causes the holding mechanism to hold the back surface of the substrate.
  • the concave substrate shape indicates a shape in which the front surface is recessed towards the back surface and the back surface protrudes to the side opposite the front surface.
  • control unit brings the center of the holding surface into point contact with the center of the back surface of the substrate, and then causes the deformation mechanism to make the holding surface have the concave shape and the curvature of the holding surface larger than the curvature of the substrate.
  • the deformation mechanism has a moving body fixed to the center of the chuck.
  • the moving body moves relative to the base along a direction in which the chuck and the base face each other.
  • the moving body includes a pipe having a through hole connected to the holding surface.
  • the through hole is a suction hole that sucks the one surface of the substrate.
  • a partition wall that divides the space between the chuck and the base into a plurality of spaces.
  • the partition wall extends from the chuck toward the base.
  • the base has an insertion hole into which a portion of the partition wall is inserted.
  • a portion of the partition wall is inserted into the insertion hole, and the insertion hole has an area in which the partition wall can be further inserted inside the insertion hole.
  • the area is defined by the tip surface of the partition wall and the inner surface of the insertion hole.
  • the bonding device bonds a first substrate and a second substrate.
  • the bonding device includes a first substrate holding device and a second substrate holding device.
  • the first substrate holding device holds the first substrate.
  • the second substrate holding device is disposed opposite the first substrate holding device and holds the second substrate.
  • the first substrate holding device has a first holding mechanism that adsorbs and holds the first substrate, and a first deformation mechanism that deforms the first holding mechanism.
  • the first holding mechanism has a first chuck having a first holding surface that holds one side of the first substrate, and a first base that is disposed on the opposite side of the first chuck from the first holding surface and to which the first chuck is attached.
  • the first deformation mechanism deforms the first chuck so that the first holding surface can realize both a convex shape in which the center of the first holding surface protrudes toward the first substrate side, and a concave shape that is recessed toward the first base side.
  • the second substrate holding device has a second holding mechanism that adsorbs and holds the second substrate, and a second deformation mechanism that deforms the second holding mechanism.
  • the second holding mechanism has a second chuck having a second holding surface that holds one side of the second substrate, and a second base that is disposed on the opposite side of the second chuck from the second holding surface and to which the second chuck is attached.
  • the second deformation mechanism deforms the second chuck so that the second holding surface can assume both a convex shape in which the center of the second holding surface protrudes toward the second substrate, and a concave shape that is recessed toward the second base.
  • the first substrate holding device and the second substrate holding device bond the first substrate and the second substrate together while one of the first holding surface and the second holding surface is formed in the convex shape and the other of the first holding surface and the second holding surface is formed in the concave shape.
  • the maximum curvature of the convex shape of the first holding surface is greater than the maximum curvature of the concave shape of the first holding surface.
  • the substrate holding method includes the steps of preparing a substrate, and deforming a chuck having a holding surface that adsorbs and holds one side of the substrate so that the holding surface has a concave shape, and holding the substrate with the chuck.
  • the concave shape refers to a shape in which the center of the holding surface is concave on the opposite side to the substrate.
  • the bonding method includes the steps of preparing a first substrate, deforming a first chuck having a first holding surface so that a first holding surface that adsorbs and holds one side of the first substrate is concave, and holding the first substrate with the first chuck, adsorbing and holding one side of the second substrate with a second holding surface of a second chuck, and bonding the first substrate and the second substrate together in a state in which the first holding surface is in the concave shape and the second holding surface opposing the first holding surface is in the convex shape.
  • the concave shape of the first holding surface indicates a shape in which the center of the first holding surface is recessed toward the opposite side to the first substrate.
  • the convex shape of the second holding surface indicates a shape in which the center of the second holding surface protrudes toward the second substrate.
  • the present invention provides a substrate holding device, a bonding device, a substrate holding method, and a bonding method that can suppress the application of stress to the substrate.
  • FIG. 1 is a side view illustrating a schematic overall configuration of a substrate holding device according to a first embodiment.
  • 1 is a cross-sectional view that illustrates a schematic diagram of a substrate holding device according to a first embodiment.
  • FIG. 2 is a plan view illustrating a chuck of the substrate holding device according to the first embodiment.
  • FIG. 4 is a schematic cross-sectional view taken along line IV-IV in FIG. 3, illustrating a state in which the support pin is disposed at a protruding position.
  • FIG. 4 is a schematic cross-sectional view taken along line IV-IV in FIG. 3, illustrating a state in which the support pin is disposed in a non-protruding position.
  • FIG. 4 is a cross-sectional view illustrating a state in which a holding surface of a chuck of the substrate holding device of the first embodiment is formed in a convex shape.
  • FIG. 4 is a cross-sectional view illustrating a state in which a holding surface of a chuck of the substrate holding device of the first embodiment is formed in a concave shape.
  • FIG. 1 is a block diagram showing a configuration of a substrate holding device according to a first embodiment; 5 is a flowchart showing a substrate holding method by the substrate holding device of the first embodiment.
  • 11A to 11C are schematic cross-sectional views for explaining a method for holding a substrate having a convex surface by a substrate holding device.
  • FIG. 11A to 11C are schematic cross-sectional views for explaining a method for holding a substrate having a concave surface by a substrate holding device.
  • FIG. 11 is a side view that illustrates a bonding apparatus according to a second embodiment.
  • 13 is a cross-sectional view that illustrates a first substrate holding device and a second substrate holding device of a bonding apparatus according to a second embodiment.
  • FIG. 13 is a cross-sectional view showing a schematic view of the second substrate holding device, in which the support pins are positioned at the protruding position.
  • FIG. 13 is a block diagram showing a configuration of a bonding apparatus according to a second embodiment.
  • 10 is a flowchart showing a bonding method performed by the bonding apparatus of the second embodiment.
  • 13 is a flowchart showing a bonding step (step S24) in the bonding method by the bonding apparatus of the second embodiment.
  • 11A to 11C are schematic diagrams for explaining a lamination method in a first combination pattern.
  • 13A to 13C are schematic diagrams for explaining a bonding method in a second combination pattern.
  • 13A to 13C are schematic diagrams for explaining a lamination method in a third combination pattern.
  • 13A to 13C are schematic diagrams for explaining a bonding method in a fourth combination pattern.
  • 13A to 13C are schematic diagrams for explaining a bonding method in a fifth combination pattern.
  • 13A and 13B are schematic diagrams for explaining a bonding method in a sixth combination pattern.
  • Figure 1 is a side view that shows a schematic overall configuration of the substrate holding device 100 of the first embodiment.
  • Figure 1 in order to prevent the drawing from becoming complicated, only two of the multiple support pins 400 are drawn in accordance with Figure 4.
  • the substrate holding device 100 includes a support base SB, a holding mechanism 110, a deformation mechanism 170, a suction mechanism 300, a plurality of support pins 400, and a pin actuator 450.
  • the support base SB is configured so as not to move vertically or horizontally. Specifically, the support base SB is fixed to the floor FL on which the substrate holding device 100 is installed. Note that the substrate holding device 100 may have a floor material (not shown), and the support base SB may be fixed to the floor material.
  • the support base SB is made of a material that is not easily deformed by the weight and heat of the holding mechanism 110.
  • the support base SB is made of, for example, stone or a metal frame.
  • the outer shape of the support base SB is, for example, a roughly rectangular parallelepiped shape.
  • a roughly rectangular parallelepiped through hole SBa is formed in the support base SB, penetrating it in the vertical direction.
  • the support base SB is formed in the shape of a rectangular ring extending in the vertical direction.
  • the support base SB supports the multiple support pins 400 of the holding mechanism 110.
  • the support base SB supports the holding mechanism 110 from below.
  • the outer periphery of the holding mechanism 110 is fixed to the support base SB by fasteners such as bolts (not shown).
  • the holding mechanism 110 adsorbs and holds the substrate W.
  • the holding mechanism 110 holds the substrate W approximately horizontally.
  • the substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell.
  • the substrate W is a semiconductor wafer.
  • the substrate W has, for example, a circular or rectangular shape in a planar view. In this embodiment, the substrate W has an approximately circular shape in a planar view.
  • the substrate W has a front surface Wa and a back surface Wb located on the opposite side to the front surface Wa.
  • the front surface Wa is a device formation surface on which elements are formed.
  • the back surface Wb is a non-device formation surface on which no elements are formed.
  • the back surface Wb is an example of the "one side" of the present invention.
  • the holding mechanism 110 holds the substrate W from below.
  • the holding mechanism 110 also adsorbs and holds the back surface Wb of the substrate W. Therefore, when the substrate W is held by the holding mechanism 110, the back surface Wb of the substrate W becomes the lower surface, and the front surface Wa of the substrate W becomes the upper surface. Needless to say, when the substrate W is not held by the holding mechanism 110, it is possible to turn the substrate W upside down. However, in this embodiment, for ease of understanding, the substrate W is not turned upside down unless otherwise explained. In other words, in this embodiment, regardless of whether the substrate W is held by the holding mechanism 110 or not, the front surface Wa of the substrate W is the upper surface, and the back surface Wb of the substrate W is the lower surface.
  • a part of the deformation mechanism 170 is attached, for example, to the lower part of the holding mechanism 110 using a fastener such as a bolt (not shown).
  • the deformation mechanism 170 has a moving body 171 and a driving mechanism 173, as described below.
  • the driving mechanism 173 is attached to the lower part of the holding mechanism 110 using a fastener such as a bolt (not shown).
  • the deformation mechanism 170 has a function of deforming a part of the holding mechanism 110.
  • the driving mechanism 173 may be attached to the support base SB. The configuration of the deformation mechanism 170 will be described below.
  • a part of the suction mechanism 300 is attached, for example, to the floor FL on which the substrate holding device 100 is installed, using fasteners such as bolts (not shown).
  • the suction mechanism 300 is a device for adsorbing the substrate W to the holding mechanism 110, and sucks in air. Note that a part of the suction mechanism 300 may be attached to the support base SB. The configuration of the suction mechanism 300 and the suction method used by the suction mechanism 300 will be described later.
  • the multiple support pins 400 are arranged to vertically penetrate the holding mechanism 110 and are provided so as to be vertically movable relative to the holding mechanism 110.
  • the multiple support pins 400 support the substrate W before it is held by the holding mechanism 110.
  • the multiple support pins 400 support the back surface Wb of the substrate W by suction.
  • the multiple support pins 400 support the substrate W from below.
  • the multiple support pins 400 receive the substrate W from the transport arm TA of the transport device TR.
  • the transport device TR is, for example, a device other than the substrate holding device 100, or a device that transports the substrate W from a substrate cassette (not shown) to the substrate holding device 100.
  • the multiple support pins 400 also transfer the substrate W received from the transport device TR to the holding mechanism 110.
  • the configuration of the multiple support pins 400 will be described later.
  • the pin actuator 450 is attached, for example, to the lower part of the holding mechanism 110 using a fastener (not shown) such as a bolt.
  • the pin actuator 450 drives the multiple support pins 400.
  • the pin actuator 450 drives the multiple support pins 400, which enables the multiple support pins 400 to receive a substrate W from the transport device TR and to pass the substrate W to the holding mechanism 110.
  • the pin actuator 450 may be attached to the support base SB. The configuration of the pin actuator 450 will be described later.
  • FIG. 2 is a cross-sectional view that shows a schematic diagram of the substrate holding device 100 of the first embodiment.
  • the holding mechanism 110 has a base 120, a chuck 130, a support wall 140, a fixing ring 150, and a partition wall 160.
  • the base 120 has a substantially circular shape in a plan view.
  • the base 120 is, for example, a plate.
  • the base 120 has an upper surface 120a and a lower surface 120b.
  • the upper surface 120a and the lower surface 120b are disposed substantially horizontally.
  • the base 120 has a first member 121 and a second member 122.
  • the first member 121 has a substantially circular shape in a plan view.
  • the second member 122 has a ring shape in a plan view, and surrounds the outer periphery of the first member 121.
  • the first member 121 constitutes the central part of the base 120
  • the second member 122 constitutes the outer periphery of the base 120. Note that in this embodiment, an example in which the base 120 has the first member 121 and the second member 122 will be described, but the base 120 does not have to be formed separately into the first member 121 and the second member 122, and may have the first member 121, the second member 122, and other members not shown.
  • the first member 121 is formed of, for example, ceramic or metal.
  • the first member 121 has a generally disk shape or a generally cylindrical shape.
  • the first member 121 is also formed with an insertion hole 121a through which a moving body 171 of the deformation mechanism 170, which will be described later, is inserted.
  • the insertion hole 121a penetrates the first member 121 in the thickness direction (here, the vertical direction).
  • the insertion hole 121a is formed at the center of the first member 121.
  • the first member 121 is also formed with a through hole 121b through which air passes.
  • the through hole 121b penetrates the first member 121 in the thickness direction.
  • a plurality of through holes 121b are provided.
  • the through hole 121b is also formed radially outward of the insertion hole 121a.
  • the first member 121 also has seal grooves 121c and 121d.
  • Seal groove 121c is formed in a substantially circular ring shape along the inner circumferential surface of insertion hole 121a.
  • Seal groove 121c is a groove formed on the inner circumferential surface of insertion hole 121a with its center at the central axis of the first member 121.
  • Seal groove 121d is formed in a ring shape along the outer circumferential surface of the first member 121.
  • Seal groove 121d is a groove formed on the outer circumferential surface of the first member 121 with its center at the central axis of the first member 121.
  • Seal grooves 121c and 121d are formed, for example, by cutting.
  • the first member 121 also has a flange 121e.
  • the flange 121e is formed on the lower part of the first member 121.
  • the flange 121e protrudes radially outward further than other parts of the first member 121.
  • the upper surface of the flange 121e contacts the lower surface of the second member 122, and the flange 121e has the function of positioning the second member 122 in the up-down direction.
  • the second member 122 is formed of, for example, ceramic or metal.
  • the second member 122 is formed in an annular shape surrounding the periphery of the first member 121.
  • the second member 122 has an approximately annular shape or an approximately cylindrical shape.
  • the second member 122 also has a step portion 122a.
  • the step portion 122a is formed on the inner peripheral surface of the second member 122.
  • the step portion 122a of the second member 122 and the outer peripheral surface of the first member 121 form an insertion groove 120c.
  • the insertion groove 120c is formed on the upper surface 120a of the base 120. In other words, the insertion groove 120c is formed at a position of the base 120 facing the chuck 130.
  • the insertion groove 120c also extends in the vertical direction.
  • the insertion groove 120c may also penetrate the base 120 in the vertical direction.
  • the second member 122 also has a through hole 122b formed therein through which air passes.
  • the through hole 122b passes through the second member 122 in the thickness direction (here, the vertical direction).
  • a plurality of through holes 122b are provided.
  • the through holes 122b are located radially outward of the insertion groove 120c.
  • the second member 122 also has a seal groove 122c.
  • the seal groove 122c is formed in a generally annular shape on the upper surface of the second member 122 along the outer periphery of the second member 122.
  • the seal groove 122c is formed, for example, by cutting.
  • the chuck 130 has a substantially circular shape in a plan view.
  • the chuck 130 is, for example, a plate.
  • the chuck 130 is disposed above the base 120.
  • the chuck 130 is smaller than the base 120, and the lower surface of the chuck 130 faces the upper surface 120a of the base 120.
  • the chuck 130 is disposed substantially parallel to the base 120 at a predetermined distance (for example, 5 mm or more) from the base 120.
  • the chuck 130 is formed, for example, from ceramic, resin, metal, or synthetic rubber, and can bend by several mm to approximately 10 mm.
  • the chuck 130 has a holding surface 130a and a back surface 130c located opposite the holding surface 130a.
  • the holding surface 130a holds the back surface Wb (here, the bottom surface) of the substrate W.
  • the holding surface 130a is the top surface of the chuck 130
  • the back surface 130c is the bottom surface of the chuck 130.
  • the back surface Wb (here, the bottom surface) of the substrate W is the surface that comes into contact with the holding surface 130a (here, the top surface) of the chuck 130.
  • the chuck 130 is formed with through holes 130b through which air passes.
  • the through holes 130b penetrate the chuck 130 in the thickness direction (here, the vertical direction).
  • a plurality of through holes 130b are provided.
  • the through holes 130b are formed over substantially the entire area of the chuck 130 on which the substrate W is placed.
  • the through holes 130b are holes for sucking in air and adsorbing the substrate W, as described below.
  • the support wall 140 supports the chuck 130.
  • the support wall 140 and the chuck 130 are formed from a single member.
  • the support wall 140 may be formed from a separate member from the chuck 130.
  • the support wall 140 extends from the outer peripheral end of the chuck 130 toward the base 120. In this embodiment, the support wall 140 extends downward from the outer peripheral end of the chuck 130. The lower end of the support wall 140 is fixed to the upper surface 120a of the base 120, and the upper end of the support wall 140 is connected to the chuck 130. Thus, the chuck 130 is positioned a predetermined distance above the base 120.
  • the support wall 140 is formed in a substantially annular shape along the outer peripheral edge of the chuck 130.
  • the support wall 140 is a substantially annular wall.
  • a space S is formed by the base 120, the chuck 130, and the support wall 140.
  • the support wall 140 has a flange portion 141.
  • the flange portion 141 is formed on the lower portion of the support wall 140.
  • the flange portion 141 protrudes radially outward beyond other portions of the support wall 140.
  • the fixing ring 150 has, for example, a generally circular ring shape and is disposed along the outer peripheral surface of the support wall 140.
  • the fixing ring 150 fixes the flange portion 141 to the upper surface 120a of the base 120.
  • the fixing ring 150 has a generally L-shape in cross section and engages with the flange portion 141.
  • a step that engages with the flange portion 141 is formed on the inner peripheral surface of the fixing ring 150.
  • the fixing ring 150 is fixed to the base 120 by, for example, a screw.
  • the fixing ring 150 is fixed to the base 120, and thus the flange portion 141 is fixed to the base 120.
  • the partition wall 160 extends from the chuck 130 toward the base 120. Specifically, the partition wall 160 extends from the back surface 130c, which is the lower surface of the chuck 130, toward the base 120.
  • the partition wall 160 is formed in a substantially circular ring shape.
  • the partition wall 160 is formed at a position corresponding to the insertion groove 120c of the base 120, and the vertical length of the partition wall 160 is longer than the vertical length of the support wall 140. Therefore, the tip of the partition wall 160 is inserted into the insertion groove 120c.
  • the holding surface 130a of the chuck 130 when the holding surface 130a of the chuck 130 is in a planar state (as shown in FIG. 2), a part of the partition wall 160 is inserted into the insertion groove 120c, and the insertion groove 120c has an area S120 in which the partition wall 160 can be further inserted into the insertion groove 120c.
  • the area S120 is defined by the tip surface 160a of the partition wall 160 and the inner surface 120d of the insertion groove 120c.
  • a gap is formed between the inner surface (the lower surface in FIG. 2) of the insertion groove 120c and the tip surface 160a (the lower surface in FIG. 2) of the partition wall 160. Therefore, it is possible to further insert the partition wall 160 into the insertion groove 120c.
  • the holding surface 130a can be easily made concave.
  • the partition wall 160 and the chuck 130 are formed from a single member.
  • the partition wall 160, the chuck 130, and the support wall 140 are formed from a single member. Note that the partition wall 160 may be provided as a separate member from the chuck 130.
  • the deformation mechanism 170 deforms the holding mechanism 110.
  • the deformation mechanism 170 also deforms the chuck 130 so that the center of the holding surface 130a has a convex shape that protrudes in the direction toward the substrate W (here, upward).
  • the deformation mechanism 170 also deforms the chuck 130 so that the center of the holding surface 130a has a concave shape that is recessed in the direction away from the substrate W (here, downward).
  • the deformation mechanism 170 deforms the chuck 130 so that the holding surface 130a has a convex shape, or deforms the chuck 130 so that the holding surface 130a has a concave shape.
  • the holding surface 130a being curved so that the center of the holding surface 130a protrudes in the direction toward the substrate W (here, upward) may be described as the holding surface 130a having a convex shape.
  • the holding surface 130a is curved such that the center of the holding surface 130a is recessed in a direction away from the substrate W (here, downward), this is sometimes described as the holding surface 130a having a concave shape.
  • the deformation mechanism 170 has a moving body 171, a fixed member 172, and a driving mechanism 173.
  • the moving body 171 is formed, for example, from resin or metal.
  • the moving body 171 is formed, for example, in a rod-like, columnar, or shaft-like shape.
  • the moving body 171 has a cylindrical shape and is arranged so as to extend in the vertical direction.
  • the moving body 171 is inserted into the insertion hole 121a of the first member 121. In other words, the lower end of the moving body 171 protrudes downward from the insertion hole 121a of the first member 121.
  • the upper end of the moving body 171 protrudes upward from the insertion hole 121a of the first member 121.
  • the upper end of the moving body 171 may be fixed directly to the center of the back surface 130c (the lower surface in FIG. 2) of the chuck 130, or may be fixed via a fixing member or the like.
  • the upper end of the moving body 171 is fixed to the center of the back surface 130c of the chuck 130 via a fixing member 172.
  • the fixing member 172 is disposed between the moving body 171 and the chuck 130.
  • the fixing member 172 is fixed to the back surface 130c of the chuck 130 by an adhesive, a screw, or the like.
  • the fixing member 172 is also fixed to the upper end of the moving body 171 by an adhesive, a screw, or the like.
  • the fixing member 172 is formed of, for example, a metal.
  • the fixing member 172 also functions as a sealing member that seals between the moving body 171 and the chuck 130.
  • the movable body 171 is movable relative to the base 120 along the opposing direction (here, the up-down direction) in which the chuck 130 and the base 120 face each other.
  • the driving mechanism 173 moves the moving body 171 in the vertical direction relative to the base 120.
  • the driving mechanism 173 has an actuator.
  • the driving mechanism 173 is not particularly limited, but has, for example, a driving source such as a pump or a motor, and a transmission member such as a gear and/or a cam that transmits the driving force of the driving source to the moving body 171.
  • the driving mechanism 173 is fixed, for example, to the lower surface 120b of the base 120.
  • the driving mechanism 173 When the driving mechanism 173 is driven, the moving body 171 moves in the vertical direction relative to the base 120. This causes the chuck 130 to deform. The deformation of the chuck 130 will be described later. Note that, in order to prevent the drawings from becoming complicated, the driving mechanism 173 may be omitted from FIG. 3 onwards, unless it is particularly necessary.
  • the moving body 171 includes a pipe having a through hole 171a connected to the holding surface 130a.
  • the through hole 171a penetrates the inside of the moving body 171 in the direction in which the moving body 171 extends. Air passes through the through hole 171a.
  • the through hole 171a is a suction hole that sucks the substrate W.
  • the fixed member 172 has a through hole 172a through which air passes.
  • the through hole 172a is connected to the through hole 171a of the moving body 171.
  • one through hole 130b of the chuck 130 is connected to the through hole 171a of the moving body 171 via the through hole 172a of the fixed member 172.
  • the through hole 130b connected to the through hole 171a is formed in the center of the chuck 130.
  • the holding mechanism 110 has a seal member 123a, a seal member 123b, and a seal member 123c.
  • Each of the seal members 123a, 123b, and 123c is formed of an elastic member such as rubber.
  • Each of the seal members 123a, 123b, and 123c is, for example, an O-ring.
  • Sealing member 123a is disposed in seal groove 121c. When disposed in seal groove 121c, sealing member 123a is in contact with the outer peripheral surface of moving body 171. Sealing member 123a provides a seal between moving body 171 and first member 121. Sealing member 123b is disposed in seal groove 121d. When disposed in seal groove 121d, sealing member 123b is in contact with the inner peripheral surface of partition wall 160. Sealing member 123b provides a seal between first member 121 and partition wall 160. Sealing member 123c is disposed in seal groove 122c. When disposed in seal groove 122c, sealing member 123c is in contact with the lower surface of support wall 140. Sealing member 123c provides a seal between support wall 140 and second member 122.
  • the suction mechanism 300 is connected to the through holes 171a, 121b, and 122b, and sucks in air.
  • the suction mechanism 300 has a pipe 301a connected to the through holes 171a, 121b, and 122b, a suction device 302, and a valve 310a.
  • the suction device 302 is attached to, for example, the floor FL on which the substrate holding device 100 is installed, using a fastener such as a bolt (not shown).
  • the suction device 302 has, for example, a suction pump or an exhaust fan.
  • the substrate holding device 100 does not need to have the suction device 302.
  • the pipe 301a may be connected to the suction device 302 outside the substrate holding device 100.
  • the valve 310a is provided in the pipe 301a, and switches the inside of the pipe 301a between an open state and a closed state.
  • FIG. 3 is a plan view that shows a schematic diagram of the chuck 130 of the substrate holding device 100 of the first embodiment.
  • the partition wall 160 divides the space S into a plurality of spaces.
  • the partition wall 160 divides the space S into two spaces S1 and S2.
  • the space S1 is a circular space in the center of the space S.
  • the space S2 is an annular space located on the outside of the space S. Note that, in this embodiment, an example in which the space S is divided into two spaces S1 and S2 by one partition wall 160 will be described, but the space S may be divided into three or more spaces by one or more partition walls 160, for example.
  • one or more through holes 130b of the chuck 130 are formed at a position radially inward of the partition wall 160 of the chuck 130.
  • the one or more through holes 130b connect the space S1 to the external space.
  • the multiple through holes 130b are formed at a position radially inward of the partition wall 160 of the chuck 130.
  • one or more through holes 130b of the chuck 130 are formed at a position radially outward from the partition wall 160 of the chuck 130.
  • the one or more through holes 130b connect the space S2 to the external space.
  • the multiple through holes 130b are formed at a position radially outward from the partition wall 160 of the chuck 130.
  • through hole 130b includes through hole 130d, a plurality of through holes 130e through which support pins 400 are inserted, and a plurality of through holes 130f through which support pins 400 are not inserted.
  • through hole 130d is formed in the center of chuck 130.
  • the plurality of through holes 130e are formed on the periphery of chuck 130.
  • the plurality of through holes 130f are formed throughout the entire area of chuck 130.
  • Figure 4 is a schematic cross-sectional view taken along line IV-IV in Figure 3, showing a state in which the support pin 400 is disposed at the protruding position P1.
  • Figure 5 is a schematic cross-sectional view taken along line IV-IV in Figure 3, showing a state in which the support pin 400 is disposed at the non-protruding position P2.
  • the multiple support pins 400 support the substrate W before it is held by the holding mechanism 110.
  • the multiple support pins 400 support the back surface Wb (here, the lower surface) of the substrate W.
  • the multiple support pins 400 support the substrate W and transfer the substrate W to the holding mechanism 110.
  • the multiple support pins 400 may transfer the substrate W from, for example, the transport device TR. Note that the substrate holding device 100 does not have to have the multiple support pins 400.
  • the multiple support pins 400 include multiple (here, four) support pins 400 extending in the vertical direction.
  • the support pins 400 are arranged at equal angular intervals in a plan view.
  • the support pins 400 support the back surface Wb (here, the bottom surface) of the substrate W.
  • the support pins 400 have through holes (not shown) through which air passes, and the multiple support pins 400 may suck the substrate W.
  • the support pins 400 do not have through holes (not shown).
  • one or more (four in this example) through holes 130e are located above through holes 122b.
  • the support pin 400 is inserted through through holes 122b and 130e.
  • the support pin 400 can move, for example, between a protruding position P1 (see FIG. 4) where it protrudes upward from the holding surface 130a, and a non-protruding position P2 (see FIG. 5) where it does not protrude upward from the holding surface 130a.
  • the multiple (four in this case) support pins 400 are connected to each other by a connecting member (not shown). Therefore, the multiple (four in this case) support pins 400 move vertically as a unit.
  • the substrate holding device 100 has a pin actuator 450 that moves the support pin 400 in the vertical direction.
  • the pin actuator 450 is fixed to, for example, the lower surface 120b of the base 120.
  • the pin actuator 450 is not particularly limited, but has, for example, a driving source such as a pump or a motor, and a transmission member such as a gear and/or a cam that transmits the driving force of the driving source to the lower part of the support pin 400.
  • the support pin 400 moves in the vertical direction relative to the base 120 when the pin actuator 450 is driven.
  • the support pin 400 moves to the protruding position P1 by the pin actuator 450, so that the support pin 400 protrudes from the holding surface 130a and can receive the substrate W from the transport device TR.
  • the support pin 400 receives the substrate W at the protruding position P1.
  • the support pin 400 receives the substrate W in a state in which it protrudes, for example, 10 mm or more from the holding surface 130a.
  • the height positions of the tips of all the support pins 400 are approximately constant.
  • the pin actuator 450 moves the support pins 400 from the protruding position P1 to the non-protruding position P2, so that the support pins 400 no longer protrude from the holding surface 130a.
  • the substrate W is moved downward from a position above the holding surface 130a, and the substrate W is transferred from the support pins 400 to the holding surface 130a.
  • Figure 6 is a cross-sectional view that shows a schematic state in which the holding surface 130a of the chuck 130 of the substrate holding device 100 of the first embodiment has a convex shape.
  • Figure 7 is a cross-sectional view that shows a schematic state in which the holding surface 130a of the chuck 130 of the substrate holding device 100 of the first embodiment has a concave shape.
  • the chuck 130 can be deformed so that the holding surface 130a has a convex shape, and can also be deformed so that the holding surface 130a has a concave shape.
  • the holding surface 130a having a convex shape means that the holding surface 130a is curved so that the center of the holding surface 130a protrudes in a direction toward the substrate W (upward in this case), as shown in FIG. 6.
  • the convex shape of the holding surface 130a indicates a shape in which the center of the holding surface 130a protrudes in a direction toward the substrate W.
  • the holding surface 130a having a concave shape means that the holding surface 130a is curved so that the center of the holding surface 130a is concave in a direction away from the substrate W (downward in this case), as shown in FIG. 7.
  • the concave shape of the holding surface 130a indicates a shape in which the center of the holding surface 130a is concave in a direction away from the substrate W.
  • the driving mechanism 173 moves the movable body 171 upward relative to the base 120
  • the upper end of the movable body 171 is fixed to the center of the chuck 130 by the fixing member 172, and therefore, as the movable body 171 moves upward relative to the base 120, the center of the chuck 130 is pressed upward against the base 120. Therefore, while the outer peripheral edge of the chuck 130 is fixed by the fixing ring 150, the center of the chuck 130 is pressed upward. Therefore, since the chuck 130 is capable of bending, the chuck 130 is deformed to have an upwardly convex shape. As a result, the holding surface 130a becomes convex (see FIG. 6).
  • the driving mechanism 173 moves the movable body 171 downward relative to the base 120
  • the upper end of the movable body 171 is fixed to the center of the chuck 130 by the fixing member 172, and therefore, as the movable body 171 moves downward relative to the base 120, the center of the chuck 130 is pulled downward relative to the base 120. Therefore, while the outer peripheral edge of the chuck 130 is fixed by the fixing ring 150, the center of the chuck 130 is pulled downward. Therefore, since the chuck 130 is flexible, the chuck 130 is deformed to become concave downward. As a result, the holding surface 130a becomes concave (see FIG. 7).
  • FIG. 8 is a block diagram showing the configuration of the substrate holding device 100 of the first embodiment.
  • the substrate holding device 100 has a control device 190.
  • the control device 190 controls the substrate holding device 100.
  • the control device 190 controls the deformation mechanism 170.
  • the control device 190 controls the deformation mechanism 170, the suction mechanism 300, the pin actuator 450, and the warpage detection device 500, which will be described later.
  • the control device 190 includes a control unit 191 and a memory unit 193.
  • the control unit 191 has a processor.
  • the control unit 191 has, for example, a central processing unit (CPU).
  • the control unit 191 may have a general-purpose computer.
  • the memory unit 193 stores data and computer programs.
  • the data specifies, for example, the processing content and processing procedures for holding the substrate W.
  • the memory unit 193 includes a main memory device and an auxiliary memory device.
  • the main memory device is, for example, a semiconductor memory.
  • the auxiliary memory device is, for example, a semiconductor memory and/or a hard disk drive.
  • the memory unit 193 may include removable media.
  • the control unit 191 executes a computer program stored in the memory unit 193 to perform the substrate holding operation.
  • the control unit 191 acquires warpage information of the substrate W.
  • the warpage information indicates at least the warpage direction of the substrate W.
  • the warpage information indicates whether the substrate W has a concave substrate shape, a convex substrate shape, or a planar substrate shape.
  • the concave substrate shape indicates a shape in which the surface Wa of the substrate W is concave toward the back surface Wb side (here, downward), and the back surface Wb protrudes on the opposite side to the surface Wa (here, downward). That is, in this embodiment, the concave substrate shape indicates a shape in which the center of the surface Wa of the substrate W (here, the upper surface) is concave downward.
  • the convex substrate shape indicates a shape in which the surface Wa of the substrate W protrudes on the opposite side to the back surface Wb (here, upward), and the back surface Wb is concave toward the surface Wa side (here, upward). That is, in this embodiment, the convex substrate shape indicates a shape in which the center of the surface Wa of the substrate W protrudes upward.
  • the planar substrate shape indicates a shape in which both the surface Wa and the back surface Wb of the substrate W are flat.
  • the warpage information indicates the amount of warpage of the substrate W in addition to the warpage direction of the substrate W.
  • the warpage detection device 500 may detect warpage of the substrate W supported by the support pins 400, or may detect warpage of the substrate W supported by the transport device TR. In this embodiment, the warpage detection device 500 detects warpage of the substrate W supported by the support pins 400. The warpage detection device 500 transmits warpage information relating to the detected warpage to the control device 190, and the control device 190 stores the warpage information in the memory unit 193.
  • the control unit 191 also causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has, for example, a convex or concave shape based on the warpage information, and causes the holding mechanism 110 to hold the substrate W.
  • the control unit 191 also brings the center of the holding surface 130a, which is the upper surface of the chuck 130, into point contact with the center of the back surface Wb (here, the bottom surface) of the substrate W. Specifically, the control unit 191 brings the holding surface 130a into contact with the back surface Wb of the substrate W while making the holding surface 130a convex or flat. Alternatively, the control unit 191 brings the holding surface 130a into contact with the back surface Wb of the substrate W while making the holding surface 130a concave and with a curvature of the holding surface 130a smaller than the curvature of the substrate W.
  • the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a comes into close contact with the back surface Wb of the substrate W.
  • the entire back surface Wb of the substrate W comes into close contact with the holding surface 130a. Therefore, the back surface Wb of the substrate W is held by the holding surface 130a.
  • the curvature is a value that indicates the degree of bending of the curved surface. As the curvature increases, the radius of curvature decreases.
  • Figure 9 is a flow chart showing a substrate holding method using the substrate holding device 100 of the first embodiment.
  • Figure 10 is a schematic cross-sectional view for explaining a method for holding a substrate W having a convex surface Wa using the substrate holding device 100.
  • Figure 11 is a schematic cross-sectional view for explaining a method for holding a substrate W having a concave surface Wa using the substrate holding device 100.
  • the support pins 400 are omitted from Figures 10 and 11 to simplify the drawings.
  • the substrate holding method using the substrate holding device 100 includes steps S11 to S14.
  • step S11 is an example of the "substrate preparation step” of the present invention.
  • Step S14 is an example of the "substrate holding step” of the present invention.
  • step S11 the substrate W is prepared.
  • the control unit 191 may control the transport device TR to prepare the substrate W, or a transport device (not shown) other than the substrate holding device 100 may prepare the substrate W.
  • step S12 the control unit 191 detects the warpage of the substrate W using the warpage detection device 500. Specifically, while the substrate W is positioned above the holding surface 130a by the transport device TR, the control unit 191 causes the pin actuator 450 to protrude the multiple support pins 400 upward from the holding surface 130a. As a result, the multiple support pins 400 come into contact with the rear surface Wb (here, the lower surface) of the substrate W to lift the substrate W, and the substrate W moves from the transport device TR to the support pins 400. The control unit 191 then detects the warpage of the substrate W supported by the support pins 400 using the warpage detection device 500. The warpage information, which is the detection result of the warpage detection device 500, is stored in the memory unit 193.
  • step S13 the control unit 191 acquires the warpage information. Specifically, the control unit 191 acquires the warpage information from the storage unit 193.
  • step S14 the control unit 191 causes the deformation mechanism 170 to deform the chuck 130.
  • the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a convex or concave shape based on the warp information.
  • the control unit 191 drives the deformation mechanism 170 to move the moving body 171 in the vertical direction relative to the base 120, thereby deforming the chuck 130.
  • the control unit 191 may also cause the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a flat shape based on the warp information.
  • the suction mechanism 300 is driven by the control unit 191.
  • the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a convex shape.
  • the control unit 191 moves the moving body 171 upward relative to the base 120.
  • the control unit 191 deforms the chuck 130 so that the curvature of the holding surface 130a becomes larger than the curvature of the substrate W.
  • the control unit 191 uses the pin actuator 450 to move the support pin 400 downward relative to the base 120, bringing the substrate W into contact with the holding surface 130a (see the middle part of Figure 10).
  • the center of the substrate W is attracted to the through hole 130b located at the center of the chuck 130.
  • the support pin 400 is located at the protruding position P1.
  • the control unit 191 makes the curvature of the holding surface 130a smaller than or equal to the curvature of the substrate W (see the lower part of FIG. 10). Specifically, the control unit 191 causes the driving mechanism 173 to move the movable body 171 downward relative to the base 120, and causes the pin actuator 450 to move the support pin 400 downward relative to the base 120 to position it at the non-protruding position P2. As a result, when the curvature of the holding surface 130a becomes the same as the curvature of the substrate W, the entire back surface Wb of the substrate W is adsorbed to the holding surface 130a.
  • the back surface Wb (here, the lower surface) of the substrate W gradually comes into contact with the holding surface 130a from the center of the substrate W toward the radially outward side.
  • the through holes 130e and 130f radially outward of the through hole 130d adsorb the substrate W, and then the through hole 130f on the outer periphery of the chuck 130 adsorbs the substrate W. This makes it possible to prevent air from entering between the back surface Wb of the substrate W and the holding surface 130a.
  • control unit 191 stops the downward movement of the moving body 171 and the support pins 400. In this way, the substrate W is held by the substrate holding device 100.
  • the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a convex shape. That is, the control unit 191 causes the drive mechanism 173 to move the movable body 171 upward relative to the base 120.
  • the control unit 191 may cause the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a flat shape.
  • the control unit 191 may cause the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a concave shape.
  • the control unit 191 deforms the chuck 130 so that the curvature of the holding surface 130a is smaller than the curvature of the substrate W.
  • the control unit 191 uses the pin actuator 450 to move the support pin 400 downward relative to the base 120, bringing the substrate W into contact with the holding surface 130a (see the middle part of Figure 11).
  • the center of the substrate W is adsorbed by the through hole 130b located at the center of the chuck 130.
  • the support pin 400 is located at the protruding position P1.
  • the control unit 191 makes the holding surface 130a concave and sets the curvature of the holding surface 130a to be greater than or equal to the curvature of the substrate W (see the lower part of FIG. 11). Specifically, the control unit 191 causes the driving mechanism 173 to move the movable body 171 downward relative to the base 120, and causes the pin actuator 450 to move the support pin 400 downward relative to the base 120 to position it at the non-protruding position P2. As a result, when the curvature of the holding surface 130a becomes the same as the curvature of the substrate W, the entire back surface Wb of the substrate W is adsorbed to the holding surface 130a.
  • the back surface Wb (here, the lower surface) of the substrate W gradually comes into contact with the holding surface 130a from the center of the substrate W toward the radially outward side.
  • the through holes 130e and 130f radially outward of the through hole 130d adsorb the substrate W, and then the through hole 130f on the outer periphery of the chuck 130 adsorbs the substrate W. This makes it possible to prevent air from entering between the back surface Wb of the substrate W and the holding surface 130a.
  • control unit 191 stops the downward movement of the moving body 171 and the support pins 400. In this way, the substrate W is held by the substrate holding device 100.
  • the control unit 191 executes processing in the same manner as when the warpage information indicates that the substrate W has a convex substrate shape (the surface Wa of the substrate W is convex) (see FIG. 10).
  • the deformation mechanism 170 deforms the chuck 130 so that the holding surface 130a has a convex shape, and also deforms the chuck 130 so that the holding surface 130a has a concave shape. Therefore, the chuck 130 can be deformed so that the holding surface 130a has a convex or concave shape depending on the warp of the substrate W. This makes it possible to prevent the stress applied to the substrate W from increasing. Furthermore, when a substrate W on which elements are formed is used as in this embodiment, the stress applied to the substrate W can be prevented from increasing, thereby preventing adverse effects on the characteristics of the elements. Therefore, it is particularly effective to apply the present invention when a substrate W on which elements are formed is used.
  • control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a convex or concave shape based on the warpage information indicating at least the warpage direction, and causes the holding mechanism 110 to hold the substrate W. Therefore, it is possible to easily prevent the stress applied to the substrate W from increasing.
  • the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a concave substrate shape, and causes the holding mechanism 110 to hold the substrate W. Therefore, when the substrate W has a concave substrate shape, it is possible to easily prevent the stress acting on the substrate W from becoming large.
  • the control unit 191 brings the center of the holding surface 130a, which is the upper surface of the chuck 130, into point contact with the center of the back surface Wb (here, the lower surface) of the substrate W, and then uses the deformation mechanism 170 to make the curvature of the holding surface 130a larger than the curvature of the substrate W. Therefore, the back surface Wb of the substrate W gradually comes into contact with the holding surface 130a from the center of the substrate W toward the radially outer side. This makes it possible to prevent air from entering between the back surface Wb of the substrate W and the holding surface 130a. Therefore, the entire back surface Wb of the substrate W can be easily brought into close contact with the holding surface 130a. In other words, it is possible to prevent voids from being generated between the back surface Wb of the substrate W and the holding surface 130a.
  • the deformation mechanism 170 has a moving body 171 fixed to the center of the chuck 130, and the moving body 171 moves relative to the base 120 along the opposing direction in which the chuck 130 and the base 120 face each other. This makes it possible to easily deform the chuck 130 so that the holding surface 130a has a convex or concave shape.
  • the movable body 171 includes a pipe having a through hole 171a that is connected to the holding surface 130a, and the through hole 171a is a suction hole that sucks in the back surface Wb (here, the lower surface) of the substrate W. Therefore, the center of the substrate W can be easily adsorbed while the movable body 171 is fixed to the center of the chuck 130.
  • the holding surface 130a in a planar state, a portion of the partition wall 160 is inserted into the insertion groove 120c, and the insertion groove 120c has an area S120 into which the partition wall 160 can be further inserted. Therefore, by further inserting the partition wall 160 into the insertion groove 120c, the holding surface 130a can be easily made into a concave shape.
  • FIG. 12 is a side view showing a schematic diagram of the bonding apparatus 1 according to the second embodiment.
  • Fig. 12 in order to prevent the drawing from becoming complicated, only two support pins 400 of the substrate holding device 100 are drawn in the same manner as Fig. 1 of the first embodiment, and only two second support pins 410 of the second substrate holding device 200 are drawn in accordance with Fig. 14.
  • the bonding apparatus 1 includes a substrate holding device 100 (hereinafter referred to as the first substrate holding device 100) and a second substrate holding device 200 arranged opposite the first substrate holding device 100. Note that in the second embodiment, for ease of understanding, the substrate holding device 100 of the first embodiment will be described as the first substrate holding device 100.
  • first substrate W1 first holding mechanism 110, first base 120, first chuck 130, first holding surface 130a, first deformation mechanism 170, first moving body 171 and first support pin 400, respectively.
  • the first substrate holding device 100 does not include a suction mechanism 300 and a control device 190, and the bonding device 1 includes a suction mechanism 300 and a control device 190.
  • the other configurations of the first substrate holding device 100 are the same as those of the substrate holding device 100 of the first embodiment.
  • the bonding apparatus 1 bonds a first substrate W1 held by a first substrate holding device 100 and a second substrate W2 held by a second substrate holding device 200.
  • the bonding apparatus 1 includes a support frame SF, a first substrate holding device 100, a second substrate holding device 200, a first moving mechanism 610, and a second moving mechanism 620.
  • the support frame SF is fixed to the floor FL on which the bonding device 1 is installed.
  • the support frame SF is made of, for example, metal.
  • the support frame SF has, for example, a plurality of first frames SF1 extending in the vertical direction and a plurality of second frames SF2 extending in the horizontal direction.
  • four first frames SF1 are provided, and four second frames SF2 are provided.
  • the four first frames SF1 include two first frame SF1 sets (not shown) consisting of two first frames SF1 arranged at a predetermined interval from each other in the X direction. These two first frame SF1 sets overlap each other in the X direction and are arranged at a predetermined interval from each other in the Y direction.
  • the four first frames SF1 are arranged at positions corresponding to the four corners of a rectangle in a plan view.
  • the lower end of each first frame SF1 is fixed to the floor FL.
  • the four second frames SF2 include two second frames SF2 that connect the upper ends of the first frames SF1 adjacent in the X direction, and two second frames SF2 that connect the upper ends of the first frames SF1 adjacent in the Y direction.
  • the four second frames SF2 are arranged at positions that correspond to the four sides of a rectangle in a plan view.
  • the support frame SF may be fixed to a wall or ceiling in a room in which the bonding apparatus 1 is installed.
  • the support frame SF also supports the second substrate holding device 200.
  • the support frame SF has a horizontal rail SF3 that guides the second substrate holding device 200 in the horizontal direction, and a vertical rail SF4 that guides the second substrate holding device 200 in the up-down direction.
  • the horizontal rail SF3 extends, for example, in the X direction.
  • the two horizontal rails SF3 are fixed to two second frames SF2 extending in the X direction, respectively.
  • the two vertical rails SF4 are attached to two horizontal rails SF3, respectively.
  • the vertical rail SF4 is configured to be movable in the X direction along the horizontal rail SF3.
  • the second substrate holding device 200 is configured to be movable relative to the first substrate holding device 100.
  • the second substrate holding device 200 includes a second support stand SB2.
  • the second support stand SB2 is supported by a vertical rail SF4, and moves horizontally along the horizontal rail SF3 together with the vertical rail SF4.
  • the second support stand SB2 also moves up and down along the vertical rail SF4.
  • the second substrate holding device 200 is disposed above the first substrate holding device 100.
  • the second substrate holding device 200 is disposed so that the first substrate holding device 100 is inverted in the vertical direction.
  • the first substrate holding device 100 and the second substrate holding device 200 may also be disposed so that they are inverted in the vertical direction. The configuration of the second substrate holding device 200 will be described later.
  • the first moving mechanism 610 is fixed to, for example, the horizontal rail SF3.
  • the first moving mechanism 610 may be fixed to the second frame SF2.
  • the first moving mechanism 610 moves the second substrate holding device 200 in the horizontal direction.
  • the first moving mechanism 610 moves the second substrate holding device 200 in the horizontal direction together with the vertical rail SF4.
  • the first moving mechanism 610 has an actuator.
  • the first moving mechanism 610 is not particularly limited, but has, for example, a driving source such as a pump or a motor, and a transmission member such as a gear that transmits the driving force of the driving source to the vertical rail SF4 or the second support base SB2.
  • the first moving mechanism 610 may move the first substrate holding device 100, or may move both the first substrate holding device 100 and the second substrate holding device 200.
  • the second moving mechanism 620 is fixed to, for example, a vertical rail SF4.
  • the second moving mechanism 620 moves the second substrate holding device 200 in the vertical direction.
  • the second moving mechanism 620 has an actuator.
  • the second moving mechanism 620 is not particularly limited, but has, for example, a drive source such as a pump or a motor, and a transmission member such as a gear that transmits the drive force of the drive source to the second support base SB2.
  • the second moving mechanism 620 may move the first substrate holding device 100, or may move both the first substrate holding device 100 and the second substrate holding device 200.
  • the second substrate holding device 200 In addition to the second support stand SB2, the second substrate holding device 200 includes a second holding mechanism 210, a second deformation mechanism 270, a plurality of second support pins 410, and a second pin actuator 460.
  • the second support stand SB2 is configured to move in the vertical and horizontal directions. Furthermore, the second support stand SB2 is formed from a material that is not easily deformed by the weight and heat of the second holding mechanism 210.
  • the second support stand SB2 is formed, for example, from a stone material or a metal frame.
  • the outer shape of the second support stand SB2 has, for example, a substantially rectangular parallelepiped shape.
  • the second support stand SB2 has a through hole SBa that is substantially rectangular parallelepiped shaped and penetrates in the vertical direction. In other words, the second support stand SB2 is formed in the shape of a rectangular ring extending in the vertical direction.
  • the second holding mechanism 210 holds the second substrate W2 by suction.
  • the second holding mechanism 210 holds the second substrate W2 approximately horizontally.
  • the second holding mechanism 210 holds the second substrate W2 from above.
  • the second holding mechanism 210 also holds the back surface Wb of the second substrate W2 by suction. Therefore, when the second substrate W2 is held by the second holding mechanism 210, the back surface Wb of the second substrate W2 is the upper surface, and the front surface Wa of the second substrate W2 is the lower surface.
  • the second substrate W2 is not held by the second holding mechanism 210, it goes without saying that the second substrate W2 can be turned upside down.
  • the second substrate W2 is not turned upside down unless otherwise specified. In other words, in this embodiment, regardless of whether the second substrate W2 is held by the second holding mechanism 210 or not, the front surface Wa of the second substrate W2 is the lower surface, and the back surface Wb of the second substrate W2 is the upper surface.
  • a portion of the second deformation mechanism 270 is attached, for example, to the upper portion of the second holding mechanism 210 using a fastener such as a bolt (not shown).
  • the second deformation mechanism 270 has a second moving body 271 and a driving mechanism 273, as described below.
  • the driving mechanism 273 is attached to the upper portion of the second holding mechanism 210 using a fastener such as a bolt (not shown).
  • the second deformation mechanism 270 has a function of deforming a portion of the second holding mechanism 210.
  • the driving mechanism 273 may be attached to the second support base SB2. The configuration of the second deformation mechanism 270 will be described below.
  • a part of the suction mechanism 300 is attached, for example, to the first frame SF1 of the support frame SF using fasteners such as bolts (not shown).
  • the suction mechanism 300 is a device for adsorbing the first substrate W1 and the second substrate W2 to the first holding mechanism 110 and the second holding mechanism 210, respectively, and sucks in air.
  • a part of the suction mechanism 300 may be attached to the first support stand SB1 or the second support stand SB2, or may be attached to the second frame SF2 of the support frame SF, or may be placed on the floor FL on which the bonding apparatus 1 is installed.
  • the configuration of the suction mechanism 300 and the suction method using the suction mechanism 300 will be described later.
  • the multiple second support pins 410 are arranged to penetrate the second holding mechanism 210 in the vertical direction, and are provided so as to be movable in the vertical direction relative to the second holding mechanism 210.
  • the multiple second support pins 410 support the second substrate W2 before it is held by the second holding mechanism 210.
  • the multiple second support pins 410 support the back surface Wb of the second substrate W2 by suction.
  • the multiple second support pins 410 support the second substrate W2 from above.
  • the multiple second support pins 410 receive the second substrate W2 from the transport arm TA of the transport device TR.
  • the second support pins 410 also transfer the second substrate W2 received from the transport device TR to the second holding mechanism 210.
  • the configuration of the second support pins 410 will be described later.
  • the second pin actuator 460 is attached, for example, to the top of the second holding mechanism 210 using a fastener (not shown) such as a bolt. Driving the second pin actuator 460 moves the multiple second support pins 410 up and down. Driving the second pin actuator 460 moves the multiple second support pins 410 up and down, and the multiple second support pins 410 can receive the second substrate W2 from the transport device TR or pass the second substrate W2 to the second holding mechanism 210.
  • the second pin actuator 460 may be attached to the second support base SB2. The configuration of the second pin actuator 460 will be described later.
  • FIG. 13 is a cross-sectional view that shows a schematic diagram of the first substrate holding device 100 and the second substrate holding device 200 of the bonding apparatus 1 of the second embodiment.
  • the second substrate holding device 200 is configured in the same manner as the first substrate holding device 100.
  • the second substrate holding device 200 is provided by inverting the first substrate holding device 100 in the up-down direction. A detailed description will be given below.
  • the second holding mechanism 210 adsorbs and holds the second substrate W2.
  • the second holding mechanism 210 holds the second substrate W2 approximately horizontally.
  • the second substrate W2 is configured similarly to the first substrate W1. However, the second substrate W2 is held by the second substrate holding device 200 with its front surface Wa facing downward and its back surface Wb facing upward.
  • the second holding mechanism 210 has a second base 220, a second chuck 230, a support wall 140, a fixing ring 150, and a partition wall 160.
  • the second base 220 has a substantially circular shape in a plan view.
  • the second base 220 is, for example, a plate.
  • the second base 220 has a lower surface 220a and an upper surface 220b.
  • the second base 220 also has a first member 121 and a second member 122.
  • the lower surface 220a and the upper surface 220b are arranged substantially horizontally.
  • the second chuck 230 has a substantially circular shape in a plan view.
  • the second chuck 230 is, for example, a plate.
  • the second chuck 230 is disposed below the second base 220.
  • the second chuck 230 is smaller than the second base 220, and the upper surface of the second chuck 230 faces the lower surface 220a of the second base 220.
  • the second chuck 230 is disposed substantially parallel to the second base 220 at a predetermined distance (for example, 5 mm or more) from the second base 220.
  • the second chuck 230 is formed, for example, from ceramic, resin, metal, or synthetic rubber, and can bend by several mm to about 10 mm.
  • the second chuck 230 has a second holding surface 230a and a back surface 230c located on the opposite side to the second holding surface 230a.
  • the second holding surface 230a holds the back surface Wb (here, the upper surface) of the second substrate W2.
  • the second holding surface 230a is the lower surface of the second chuck 230
  • the back surface 230c is the upper surface of the second chuck 230.
  • the back surface Wb (here, the upper surface) of the second substrate W2 is the surface that contacts the second chuck 230.
  • the second deformation mechanism 270 deforms the second holding mechanism 210.
  • the second deformation mechanism 270 deforms the second chuck 230 so that the center of the second holding surface 230a has a convex shape that protrudes in a direction toward the second substrate W2 (here, downward).
  • the second deformation mechanism 270 deforms the second chuck 230 so that the center of the second holding surface 230a has a concave shape that is recessed in a direction away from the second substrate W2 (here, upward).
  • the second deformation mechanism 270 deforms the second chuck 230 so that the second holding surface 230a has a convex shape, or deforms the second chuck 230 so that the second holding surface 230a has a concave shape.
  • the second holding surface 230a is curved such that the center of the second holding surface 230a protrudes in a direction toward the second substrate W2 (here, downward), it may be described as the second holding surface 230a having a convex shape.
  • the second holding surface 230a when the second holding surface 230a is curved such that the center of the second holding surface 230a is recessed in a direction away from the second substrate W2 (here, upward), it may be described as the second holding surface 230a having a concave shape.
  • the second deformation mechanism 270 has a second movable body 271 fixed to the center of the second chuck 230.
  • the second movable body 271 includes a pipe having a through hole 171a.
  • the second deformation mechanism 270 has a drive mechanism 273 that moves the second moving body 271 in the vertical direction relative to the second base 220.
  • the drive mechanism 273 may be omitted from FIG. 14 and subsequent figures unless it is particularly necessary.
  • the drive mechanism 273 has an actuator.
  • the drive mechanism 273 is not particularly limited, but has, for example, a drive source such as a pump and a motor, and a transmission member such as a gear and/or a cam that transmits the drive force of the drive source to the second moving body 271.
  • the drive mechanism 273 is fixed, for example, to the upper surface 220b of the second base 220.
  • the second moving body 271 moves in the vertical direction relative to the second base 220. This causes the second chuck 230 to deform.
  • the drive mechanism 273 of the second deformation mechanism 270 is configured in the same manner as the drive mechanism 173 of the first deformation mechanism 170. Specifically, for example, when the drive mechanism 273 moves the second moving body 271 downward relative to the second base 220, the lower end of the second moving body 271 is fixed to the center of the second chuck 230 by the fixing member 172, and therefore, as the second moving body 271 moves downward relative to the second base 220, the center of the second chuck 230 is pressed downward relative to the second base 220. Therefore, in a state in which the outer peripheral edge of the second chuck 230 is fixed by the fixing ring 150, the center of the second chuck 230 is pressed downward. Therefore, since the second chuck 230 can bend, the second chuck 230 is deformed to have a convex shape in the downward direction. As a result, the second holding surface 230a becomes convex.
  • the driving mechanism 273 moves the second moving body 271 upward relative to the second base 220
  • the lower end of the second moving body 271 is fixed to the center of the second chuck 230 by the fixing member 172, and therefore, as the second moving body 271 moves upward relative to the second base 220, the center of the second chuck 230 is pulled upward relative to the second base 220. Therefore, in a state in which the outer periphery of the second chuck 230 is fixed by the fixing ring 150, the center of the second chuck 230 is pulled upward. Therefore, since the second chuck 230 can bend, the second chuck 230 is deformed to become concave in the upward direction. As a result, the second holding surface 230a becomes concave.
  • the maximum curvature of the first holding surface 130a of the first substrate holding device 100 in the convex shape is greater than the maximum curvature of the first holding surface 130a in the concave shape.
  • the maximum curvature that the first holding surface 130a can have when the first holding surface 130a is convex is greater than the maximum curvature that the first holding surface 130a can have when the first holding surface 130a is concave.
  • the maximum curvature of the first holding surface 130a in the convex shape may be smaller than or the same as the maximum curvature of the first holding surface 130a in the concave shape.
  • the maximum curvature of the second holding surface 230a of the second substrate holding device 200 in the convex shape is greater than the maximum curvature of the second holding surface 230a in the concave shape.
  • the maximum curvature that the second holding surface 230a can have when the second holding surface 230a is convex is greater than the maximum curvature that the second holding surface 230a can have when the second holding surface 230a is concave.
  • the maximum curvature of the second holding surface 230a in the convex shape may be smaller than or the same as the maximum curvature of the second holding surface 230a in the concave shape.
  • the maximum curvature of the convex shape of the first holding surface 130a is approximately the same as the maximum curvature of the convex shape of the second holding surface 230a. Also, the maximum curvature of the concave shape of the first holding surface 130a is approximately the same as the maximum curvature of the concave shape of the second holding surface 230a.
  • the suction mechanism 300 (see FIG. 12) of the bonding device 1 is connected to the through holes 171a, 121b, and 122b of the first substrate holding device 100 and the second substrate holding device 200, and sucks in air.
  • the suction mechanism 300 has a pipe 301a connected to the through holes 171a, 121b, and 122b of the first substrate holding device 100, a pipe 301c connected to the through holes 171a, 121b, and 122b of the second substrate holding device 200, and a suction device 302 (see FIG. 12).
  • the suction device 302 is attached to, for example, the first frame SF1 (see FIG. 12) of the support frame SF using a fastener (not shown) such as a bolt.
  • the suction mechanism 300 has an adjustment unit 303a, an adjustment unit 303b, and an adjustment unit 303c.
  • the adjustment unit 303a, the adjustment unit 303b, and the adjustment unit 303c adjust the suction force for the through hole 171a, the through hole 121b, and the through hole 122b, respectively.
  • the adjustment unit 303a, the adjustment unit 303b, and the adjustment unit 303c include, for example, an actuator.
  • the adjustment unit 303a, the adjustment unit 303b, and the adjustment unit 303c are not particularly limited, but include, for example, an adjustment valve provided in the pipe 301a and the pipe 301c.
  • the suction mechanism 300 may have, for example, a plurality of suction pumps or a plurality of exhaust fans that adjust the suction force for the through hole 171a, the through hole 121b, and the through hole 122b, respectively.
  • the bonding apparatus 1 does not need to have the suction device 302.
  • the pipes 301a and 301c may be connected to an external suction device 302.
  • FIG. 14 is a cross-sectional view showing a schematic diagram of the second substrate holding device 200, illustrating a state in which the second support pin 410 is positioned at the protruding position P1.
  • the second substrate holding device 200 has a plurality of second support pins 410.
  • the plurality of second support pins 410 support the second substrate W2 before it is held by the second holding mechanism 210.
  • the second substrate holding device 200 does not necessarily have a plurality of second support pins 410.
  • the multiple second support pins 410 adsorb and hold the back surface Wb (here, the upper surface) of the second substrate W2.
  • the second support pins 410 have a through hole through which air passes.
  • the suction mechanism 300 has a pipe 301d connected to the through hole of the second support pin 410, and a valve 310a that switches the inside of the pipe 301d between an open state and a closed state.
  • the pipe 301d has, for example, a rubber tube.
  • the second support pin 410 is connected to the pipe 301d by inserting the upper end (not shown) of the second support pin 410 into the rubber tube.
  • the suction mechanism 300 When the suction mechanism 300 is driven and the valve 310a is opened, the air in the through hole of the second support pin 410 is sucked in, and the inside of the through hole of the second support pin 410 becomes negative pressure. Therefore, when the suction device 302 is driven and the valve 310a is open, the second substrate W2 is brought close to the tip (here, the lower end) of the second support pin 410, and the back surface Wb of the second substrate W2 is attracted to the second support pin 410.
  • a suction device other than the suction mechanism 300 may be connected to the through hole of the second support pin 410.
  • the second substrate holding device 200 may be configured so that the second holding mechanism 210 is turned upside down after the second substrate W2 is transferred from the second support pin 410 to the second holding surface 230a with the second holding surface 230a facing upward. In this case, the second support pin 410 does not need to suck the second substrate W2.
  • the rest of the configuration of the second support pin 410 is similar to that of the support pin 400.
  • the second support pin 410 is movable between a protruding position P1 (see FIG. 14) where the second support pin 410 protrudes downward from the second holding surface 230a, and a non-protruding position P2 where the second support pin 410 does not protrude downward from the second holding surface 230a.
  • the second substrate holding device 200 has a pin actuator 460 that moves the second support pin 410 in the vertical direction.
  • the pin actuator 460 is fixed to, for example, the upper surface 220b of the second base 220.
  • the pin actuator 460 is not particularly limited, but has, for example, a driving source such as a pump or a motor, and a transmission member such as a gear and/or a cam that transmits the driving force of the driving source to the upper part of the second support pin 410.
  • a driving source such as a pump or a motor
  • a transmission member such as a gear and/or a cam that transmits the driving force of the driving source to the upper part of the second support pin 410.
  • the second support pin 410 protrudes from the second holding surface 230a and can receive the second substrate W2 from the transport device TR. In other words, the second support pin 410 adsorbs the second substrate W2 at the protruding position P1.
  • the second support pins 410 receive the second substrate W2 from the transport device TR, the second substrate W2 is received in a state where it protrudes, for example, 10 mm or more from the second holding surface 230a. At this time, the height positions of the tips of all the second support pins 410 are approximately constant.
  • the second substrate W2 may be warped by a maximum of several mm, but the second substrate W2 is attracted to the second support pins 410 and adsorbed by the second support pins 410 due to the suction of air by the second support pins 410.
  • the pin actuator 460 moves the second support pins 410 from the protruding position P1 to the non-protruding position P2, so that the second support pins 410 do not protrude from the second holding surface 230a.
  • the second substrate W2 is moved upward from a position below the second holding surface 230a, and the second substrate W2 is handed over from the second support pins 410 to the second holding surface 230a.
  • the second substrate holding device 200 is equipped with a warpage detection device 500 that detects warpage of the second substrate W2. Note that the second substrate holding device 200 does not necessarily have to be equipped with the warpage detection device 500.
  • the control unit 191 controls the first substrate holding device 100 and the second substrate holding device 200.
  • the control unit 191 acquires warpage information of the first substrate W1 and the second substrate W2. Similar to the first embodiment, the control unit 191 controls the first substrate holding device 100 to hold the first substrate W1 based on the warpage information of the first substrate W1. Also, similar to the first embodiment, the control unit 191 controls the second substrate holding device 200 to hold the second substrate W2 based on the warpage information of the second substrate W2.
  • the warpage information of the second substrate W2 indicates whether the second substrate W2 has a concave substrate shape, a convex substrate shape, or a planar substrate shape.
  • the concave substrate shape of the second substrate W2 indicates a shape in which the surface Wa (here, the lower surface) of the second substrate W2 is concave toward the back surface Wb side (here, the upward direction), and the back surface Wb (here, the upper surface) protrudes on the opposite side to the surface Wa (here, the upward direction). That is, in this embodiment, the concave substrate shape of the second substrate W2 indicates a shape in which the center of the surface Wa (here, the lower surface) of the second substrate W2 is concave upward.
  • the convex substrate shape of the second substrate W2 indicates a shape in which the surface Wa of the second substrate W2 protrudes on the opposite side to the back surface Wb (here, the downward direction), and the back surface Wb is concave toward the surface Wa side (here, the downward direction). That is, in this embodiment, the convex substrate shape of the second substrate W2 indicates a shape in which the center of the surface Wa of the substrate W protrudes downward.
  • the substrate planar shape refers to a shape in which both the front surface Wa and the back surface Wb of the second substrate W2 are planar. In the following description, a state in which the substrate W (first substrate W1 and second substrate W2) has a concave substrate shape may be described as the front surface Wa being concave.
  • a state in which the substrate W (first substrate W1 and second substrate W2) has a convex substrate shape may be described as the front surface Wa being convex.
  • a state in which the substrate W (first substrate W1 and second substrate W2) has a planar substrate shape may be described as the front surface Wa being planar.
  • the warpage information of the second substrate W2 indicates the warpage amount of the second substrate W2 in addition to the warpage direction of the second substrate W2.
  • the control unit 191 also controls the first substrate holding device 100 and the second substrate holding device 200 based on the warpage information of the first substrate W1 and the second substrate W2 to bond the first substrate W1 and the second substrate W2 together.
  • FIG. 16 is a flowchart showing the bonding method using the bonding apparatus 1 of the second embodiment.
  • the bonding method using the bonding apparatus 1 includes steps S21 to S24.
  • step S21 is an example of the "step of holding the first substrate” of the present invention.
  • step S22 is an example of the "step of holding the second substrate” of the present invention.
  • Step S24 is an example of the "step of bonding" of the present invention.
  • step S21 the control unit 191 holds the first substrate W1 by the first substrate holding device 100. Specifically, the control unit 191 causes the first substrate holding device 100 to hold the first substrate W1 in a manner similar to the substrate holding method described with reference to FIG. 9. At this time, the front surface Wa of the first substrate W1 faces upward, and the back surface Wb faces downward.
  • step S22 the control unit 191 holds the second substrate W2 by the second substrate holding device 200. Specifically, the control unit 191 causes the second substrate holding device 200 to hold the second substrate W2 in the same manner as the substrate holding method described with reference to FIG. 9. At this time, the second support pins 410 of the second substrate holding device 200 suck the second substrate W2 to support the back surface Wb of the second substrate W2. Also, at this time, the front surface Wa of the second substrate W2 faces downward, and the back surface Wb faces upward. Note that the second substrate holding device 200 may hold the second substrate W2 with the second holding surface 230a facing upward, and then be turned upside down by an inversion mechanism (not shown).
  • steps S21 and S22 may be processed in the reverse order, or may be processed in parallel.
  • step S23 the control unit 191 aligns the first substrate W1 and the second substrate W2 using the first moving mechanism 610. Specifically, the control unit 191 acquires relative position information indicating the relative positions of the first substrate W1 and the second substrate W2 using a position detection sensor (not shown). For example, the position detection sensor detects alignment marks provided on the first substrate W1 and the second substrate W2. Then, the control unit 191 moves the second substrate holding device 200 in the horizontal direction based on the relative position information using the first moving mechanism 610. This aligns the first substrate W1 and the second substrate W2. Note that when detecting the alignment marks using the position detection sensor, the surfaces Wa of the first substrate W1 and the second substrate W2 may be made flat by the first deformation mechanism 170 and the second deformation mechanism 270. This configuration can improve the detection accuracy of the position detection sensor.
  • step S24 the control unit 191 bonds the first substrate W1 and the second substrate W2 together using the second movement mechanism 620. Specifically, the control unit 191 bonds the first substrate W1 and the second substrate W2 together by moving at least one of the first substrate W1 and the second substrate W2 in the vertical direction. In this embodiment, the control unit 191 bonds the first substrate W1 and the second substrate W2 together by moving the second substrate holding device 200 in the downward direction using the second movement mechanism 620.
  • control unit 191 deforms at least one of the first chuck 130 of the first substrate holding device 100 and the second chuck 230 of the second substrate holding device 200 based on the warpage information of the first substrate W1 and the warpage information of the second substrate W2, thereby bonding the first substrate W1 and the second substrate W2 together.
  • FIG. 17 is a flow chart showing the bonding process (step S24) in the bonding method using the bonding apparatus 1 of the second embodiment.
  • the bonding process (step S24) includes steps S241 to S244.
  • step S241 the control unit 191 determines the warpage shapes of the first chuck 130 and the second chuck 230 at the time of bonding based on the warpage information. Specifically, the control unit 191 determines the combination pattern of the warpage directions of the first substrate W1 and the second substrate W2 based on the warpage information of the first substrate W1 and the second substrate W2.
  • the first combination pattern is a pattern in which both surfaces Wa of the first substrate W1 and the second substrate W2 are flat (substrate planar shape).
  • the second combination pattern is a pattern in which one of the surfaces Wa of the first substrate W1 and the second substrate W2 is flat (substrate planar shape) and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex (substrate convex shape).
  • the third combination pattern is a pattern in which one of the surfaces Wa of the first substrate W1 and the second substrate W2 is flat (substrate planar shape) and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave (substrate concave shape).
  • the fourth combination pattern is a pattern in which both surfaces Wa of the first substrate W1 and the second substrate W2 are convex (substrate convex shape).
  • the fifth combination pattern is a pattern in which one of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex (substrate convex shape) and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave (substrate concave shape).
  • the sixth combination pattern is a pattern in which both of the surfaces Wa of the first substrate W1 and the second substrate W2 are concave (substrate concave shape).
  • control unit 191 determines the warped shape of the first chuck 130 and the second chuck 230 when bonding based on the first to sixth combination patterns. In other words, the control unit 191 determines the warped shape of the first holding surface 130a and the second holding surface 230a when bonding.
  • control unit 191 may determine the amount of warping of the first chuck 130 and the second chuck 230 during bonding based on the amount of warping of the first substrate W1 and the second substrate W2. In other words, the control unit 191 may determine the amount of warping of the first holding surface 130a and the second holding surface 230a during bonding.
  • step S242 the control unit 191 deforms the first chuck 130 and the second chuck 230 so as to have the warped shape determined in step S241. Specifically, the control unit 191 deforms the first chuck 130 by the first deformation mechanism 170 and deforms the second chuck 230 by the second deformation mechanism 270 so as to have the warped shape determined in step S241.
  • the control unit 191 drives the first deformation mechanism 170 to move the first moving body 171 in the vertical direction relative to the first base 120, thereby deforming the first chuck 130.
  • the control unit 191 drives the second deformation mechanism 270 while the second base 220 is fixed, thereby moving the second moving body 271 in the vertical direction relative to the second base 220, thereby deforming the second chuck 230.
  • step S243 the control unit 191 brings the first substrate W1 and the second substrate W2 into point contact. Specifically, the control unit 191 causes the second moving mechanism 620 to bring the center of the first substrate W1 into point contact with the center of the second substrate W2.
  • step S244 the control unit 191 brings the first substrate W1 and the second substrate W2 into full contact with each other. In other words, the control unit 191 bonds the first substrate W1 and the second substrate W2 together.
  • Fig. 18 is a schematic diagram for explaining a bonding method in a first combination pattern.
  • a case where both the surfaces Wa of the first substrate W1 and the second substrate W2 are planar will be explained.
  • a case where both the first substrate W1 and the second substrate W2 have a substrate planar shape will be explained.
  • the control unit 191 when both the surfaces Wa of the first substrate W1 and the second substrate W2 are planar (the state shown in the upper part of FIG. 18), the control unit 191, for example, maintains either the first holding surface 130a of the first chuck 130 or the second holding surface 230a of the second chuck 230 in a planar shape, and makes the other of the first holding surface 130a and the second holding surface 230a in a convex shape.
  • the control unit 191 for example, maintains the first holding surface 130a in a planar shape, and makes the second holding surface 230a in a convex shape (the state shown in the middle part of FIG. 18).
  • control unit 191 drives the second deformation mechanism 270 while fixing the second base 220, thereby moving the second moving body 271 downward relative to the second base 220, thereby making the second holding surface 230a in a convex shape.
  • the control unit 191 may also make both the first holding surface 130a and the second holding surface 230a convex.
  • control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620.
  • the second support stand SB2, the second base 220 and the second support pins 410 move downward by the same amount. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.
  • the control unit 191 gradually reduces the suction force on the second substrate W2.
  • the second substrate W2 is peeled off from the second chuck 230 by the restoring force of the second substrate W2, and the surface Wa (here, the lower surface) of the second substrate W2 is deformed to become closer to a flat surface, and the entire surface Wa of the second substrate W2 is brought into close contact with the entire surface Wa of the first substrate W1 (here, the upper surface) (the state shown in the lower part of FIG. 18).
  • the contact area gradually expands radially outward, and the surface Wa of the first substrate W1 and the surface Wa of the second substrate W2 are in contact over their entire surfaces. Therefore, the generation of voids between the first substrate W1 and the second substrate W2 is suppressed.
  • the control unit 191 when the control unit 191 gradually reduces the suction force on the second substrate W2, the control unit 191 gradually reduces the suction force from the center of the second substrate W2 toward the radially outer side. Specifically, the control unit 191 switches the adjustment unit 303a from an open state to a closed state, then switches the adjustment unit 303b from an open state to a closed state, and then switches the adjustment unit 303c from an open state to a closed state. In this manner, the suction forces on the through holes 171a, 121b, and 122b are reduced in this order.
  • the contact area between the first substrate W1 and the second substrate W2 tends to gradually expand radially outward. Therefore, it is possible to easily suppress the generation of voids between the first substrate W1 and the second substrate W2.
  • control unit 191 may deform the second chuck 230 from a state in which the surface Wa of the first substrate W1 and the surface Wa of the second substrate W2 are in point contact, so that the second holding surface 230a becomes flat, without reducing the suction force on the second substrate W2.
  • the control unit 191 moves the second base 220 downward so that the second moving body 271 does not move in the vertical direction.
  • the control unit 191 moves the second moving body 271 upward relative to the second base 220 at the same speed by the drive mechanism 273.
  • control unit 191 moves the second support pin 410 upward relative to the second base 220 by the pin actuator 460 so that the second support pin 410 of the second substrate holding device 200 does not protrude downward from the second holding surface 230a. This brings the first substrate W1 and the second substrate W2 into contact over their entire surfaces.
  • Fig. 19 is a schematic diagram for explaining a bonding method in a second combination pattern.
  • a case where one of the surfaces Wa of the first substrate W1 and the second substrate W2 is planar and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex will be explained.
  • a case where one of the first substrate W1 and the second substrate W2 is a planar substrate shape and the other of the first substrate W1 and the second substrate W2 is a convex substrate shape will be explained.
  • the control unit 19 when one of the surfaces Wa of the first substrate W1 and the second substrate W2 is planar and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex (the state shown in the upper part of FIG. 19), the control unit 191, for example, maintains one of the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 planar and makes the other of the first holding surface 130a and the second holding surface 230a convex.
  • the surface Wa of the first substrate W1 is convex and the surface Wa of the second substrate W2 is planar.
  • the control unit 191 for example, maintains the first holding surface 130a convex and the second holding surface 230a flat (the state shown in the middle part of FIG. 19).
  • the control unit 191 may make both the first holding surface 130a and the second holding surface 230a convex.
  • control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.
  • the control unit 191 causes the first chuck 130 to deform by the first deformation mechanism 170 so that the first holding surface 130a becomes flat, while bringing the surface Wa (here, the lower surface) of the second substrate W2 into contact with the surface Wa (here, the upper surface) of the first substrate W1.
  • the control unit 191 causes the second substrate holding device 200 to move downward at the same speed by the second moving mechanism 620 while moving the first moving body 171 downward relative to the first base 120 by the drive mechanism 173.
  • the first substrate W1 and the second substrate W2 come into contact with each other over their entire surfaces (the state shown in the lower part of FIG. 19).
  • control unit 191 may, for example, cause the surface Wa (here, the lower surface) of the second substrate W2 to come into contact with the surface Wa (here, the upper surface) of the first substrate W1 while deforming the second chuck 230 so that the second holding surface 230a becomes concave.
  • Fig. 20 is a schematic diagram for explaining a bonding method in a third combination pattern.
  • a case where one of the surfaces Wa of the first substrate W1 and the second substrate W2 is planar and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave will be explained.
  • a case where one of the first substrate W1 and the second substrate W2 is a planar substrate shape and the other of the first substrate W1 and the second substrate W2 is a concave substrate shape will be explained.
  • the control unit 19 when one of the surfaces Wa of the first substrate W1 and the second substrate W2 is planar and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave (the state shown in the upper part of FIG. 20), the control unit 191, for example, makes one of the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 convex and makes the other of the first holding surface 130a and the second holding surface 230a concave.
  • the surface Wa of the first substrate W1 is concave and the surface Wa of the second substrate W2 is convex.
  • the control unit 191 maintains the first holding surface 130a in a concave shape and makes the second holding surface 230a convex by the second deformation mechanism 270 (the state shown in the middle part of FIG. 20). At this time, for example, the control unit 191 drives the second deformation mechanism 270 while the second base 220 is fixed, thereby moving the second moving body 271 downward relative to the second base 220, thereby making the second holding surface 230a convex.
  • the control unit 191 may make both the first holding surface 130a and the second holding surface 230a convex.
  • a substrate W here, the first substrate W1 with a concave surface Wa
  • the stress applied to the substrate W is likely to be large. Therefore, it is preferable not to deform the substrate W so that the warping direction of the substrate W is reversed.
  • the control unit 191 makes the curvature of one of the first holding surface 130a and the second holding surface 230a greater than the curvature of the other of the first holding surface 130a and the second holding surface 230a. In this embodiment, the control unit 191 makes the curvature of the second holding surface 230a greater than the curvature of the first holding surface 130a.
  • control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.
  • the control unit 191 gradually reduces the suction force on the second substrate W2.
  • the second substrate W2 peels off from the second chuck 230, and the surface Wa (here, the bottom surface) of the second substrate W2 deforms to become closer to a flat surface, and the entire surface Wa of the second substrate W2 comes into close contact with the entire surface Wa (here, the top surface) of the first substrate W1 (the state shown in the lower part of Figure 20).
  • the way in which the suction force is reduced and the way in which the contact area between the first substrate W1 and the second substrate W2 expands are the same as when bonding in the first combination pattern described above.
  • control unit 191 may deform the second chuck 230 from a state in which the surface Wa of the first substrate W1 and the surface Wa of the second substrate W2 are in point contact, so that the second holding surface 230a approaches a flat surface, without reducing the suction force on the second substrate W2.
  • the control unit 191 moves the second base 220 downward so that the second moving body 271 does not move in the vertical direction.
  • the method of moving the second base 220 downward so that the second moving body 271 does not move in the vertical direction is the same as that used for bonding in the first combination pattern described above. This brings the first substrate W1 and the second substrate W2 into contact over their entire surfaces.
  • (Fourth combination pattern) 21 is a schematic diagram for explaining a bonding method in a fourth combination pattern.
  • a case where both the surfaces Wa of the first substrate W1 and the second substrate W2 have a convex shape will be explained.
  • a case where both the first substrate W1 and the second substrate W2 have a convex substrate shape will be explained.
  • the control unit 191 when both the surfaces Wa of the first substrate W1 and the second substrate W2 have a convex shape (the state shown in the upper part of FIG. 21), the control unit 191, for example, maintains both the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 in a convex shape (the state shown in the middle part of FIG. 21). Note that the control unit 191 may, for example, make one of the first holding surface 130a and the second holding surface 230a flat.
  • control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.
  • the control unit 191 then deforms the first chuck 130 so that the first holding surface 130a becomes planar, and deforms the second chuck 230 so that the second holding surface 230a becomes planar.
  • the control unit 191 causes the drive mechanism 173 to move the first moving body 171 downward relative to the first base 120, while causing the drive mechanism 273 to move the second moving body 271 downward at the same speed.
  • the control unit 191 moves the second base 220 downward at a speed greater than that of the second moving body 271.
  • the control unit 191 causes the drive mechanism 273 to move the second moving body 271 upward relative to the second base 220.
  • the control unit 191 causes the drive mechanism 173 to move the second support pin 410 upward relative to the second base 220 so that the second support pin 410 does not protrude downward from the second holding surface 230a. This causes the first substrate W1 and the second substrate W2 to contact each other over their entire surfaces (the state shown in the lower part of FIG. 21).
  • the control unit 191 may deform either the first chuck 130 or the second chuck 230 so that either the first holding surface 130a or the second holding surface 230a has a concave shape. This causes the first substrate W1 and the second substrate W2 to contact each other over their entire surfaces.
  • FIG. 22 is a schematic diagram for explaining a bonding method in a fifth combination pattern.
  • a case where one of the surfaces Wa of the first substrate W1 and the second substrate W2 has a convex shape and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 has a concave shape will be explained.
  • a case where one of the first substrate W1 and the second substrate W2 has a convex substrate shape and the other of the first substrate W1 and the second substrate W2 has a concave substrate shape will be explained.
  • the control unit 19 when one of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave (the state shown in the upper part of FIG. 22), the control unit 191, for example, maintains one of the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 in a convex shape and maintains the other of the first holding surface 130a and the second holding surface 230a in a concave shape.
  • the surface Wa of the first substrate W1 is concave and the surface Wa of the second substrate W2 is convex is described.
  • control unit 191 maintains the first holding surface 130a in a concave shape and the second holding surface 230a in a convex shape (the state shown in the middle part of FIG. 22). Note that the control unit 191 may, for example, make the first holding surface 130a flat.
  • the control unit 191 makes the curvature of one of the first holding surface 130a and the second holding surface 230a greater than the curvature of the other of the first holding surface 130a and the second holding surface 230a. In this embodiment, the control unit 191 makes the curvature of the second holding surface 230a greater than the curvature of the first holding surface 130a.
  • control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.
  • the control unit 191 deforms the second chuck 230 by the first deformation mechanism 170 so that the second holding surface 230a approaches a flat surface without reducing the suction force on the second substrate W2.
  • the control unit 191 moves the second base 220 downward so that the second moving body 271 does not move vertically.
  • the method of moving the second base 220 downward so that the second moving body 271 does not move vertically is the same as that used in bonding in the first combination pattern described above. This brings the first substrate W1 and the second substrate W2 into contact over their entire surfaces.
  • the control unit 191 may deform the first chuck 130 so that the curvature of the first holding surface 130a is the same as the curvature of the second holding surface 230a. This brings the first substrate W1 and the second substrate W2 into contact over their entire surfaces.
  • (Sixth combination pattern) 23 is a schematic diagram for explaining a bonding method in the sixth combination pattern.
  • a case where both the surfaces Wa of the first substrate W1 and the second substrate W2 have a concave shape will be explained.
  • a case where both the first substrate W1 and the second substrate W2 have a concave substrate shape will be explained.
  • the control unit 191 makes one of the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 convex, and maintains the other of the first holding surface 130a and the second holding surface 230a concave. Which of the first holding surface 130a and the second holding surface 230a is made convex is determined appropriately.
  • the control unit 191 may, for example, make the holding surface that holds the substrate with the lesser amount of warping of the first substrate W1 or the second substrate W2 convex.
  • control unit 191 may make the holding surface that holds the substrate that is less adversely affected by stress convex.
  • the control unit 191 for example, maintains the first holding surface 130a in a concave shape and makes the second holding surface 230a in a convex shape (the state shown in the middle of FIG. 23).
  • the control unit 191 drives the second deformation mechanism 270 while the second base 220 is fixed, thereby moving the second moving body 271 downward relative to the second base 220, thereby making the second holding surface 230a in a convex shape.
  • the control unit 191 may, for example, make the other of the first holding surface 130a and the second holding surface 230a flat or convex.
  • the control unit 191 makes the curvature of one of the first holding surface 130a and the second holding surface 230a greater than the curvature of the other of the first holding surface 130a and the second holding surface 230a. In this embodiment, the control unit 191 makes the curvature of the second holding surface 230a greater than the curvature of the first holding surface 130a.
  • control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.
  • the control unit 191 gradually reduces the suction force on the second substrate W2.
  • the second substrate W2 peels off from the second chuck 230, and the surface Wa (here, the bottom surface) of the second substrate W2 deforms to become closer to a flat surface, and the entire surface Wa of the second substrate W2 comes into close contact with the entire surface Wa (here, the top surface) of the first substrate W1.
  • the way in which the suction force is reduced and the way in which the contact area between the first substrate W1 and the second substrate W2 expands are the same as when bonding the substrates in the first combination pattern described above.
  • the first deformation mechanism 170 deforms the first chuck 130 so that the first holding surface 130a has a convex shape, and also deforms the first chuck 130 so that the first holding surface 130a has a concave shape.
  • the second deformation mechanism 270 deforms the second chuck 230 so that the second holding surface 230a has a convex shape, and also deforms the second chuck 230 so that the second holding surface 230a has a concave shape. Therefore, when bonding, the warped shape of the first chuck 130 and the warped shape of the second chuck 230 can be combined in various ways. This makes it possible to suppress the stress applied to the first substrate W1 and the second substrate W2 from becoming too large.
  • the first substrate W1 and the second substrate W2 are bonded together with one of the first holding surface 130a and the second holding surface 230a being convex and the other of the first holding surface 130a and the second holding surface 230a being concave. Therefore, for example, when bonding a first substrate W1 having a concave surface Wa to a second substrate W2 having a convex surface Wa, the first substrate W1 and the second substrate W2 can be bonded together while maintaining the warping direction of the first substrate W1 and the warping direction of the second substrate W2. This makes it easy to prevent the stress applied to the first substrate W1 and the second substrate W2 from becoming large.
  • the maximum curvature of the convex shape of the first holding surface 130a and the second holding surface 230a is greater than the maximum curvature of the concave shape of the first holding surface 130a and the second holding surface 230a. Therefore, for example, when the first holding surface 130a is made concave and the second holding surface 230a is made convex (for example, see the middle part of Figure 20), the curvature of the second holding surface 230a can be easily made greater than the curvature of the first holding surface 130a.
  • the substrate W was a semiconductor wafer
  • the present invention is not limited to this.
  • the present invention can use various substrates other than semiconductor wafers as the substrate W.
  • both the first holding surface 130a of the first substrate holding device 100 and the second holding surface 230a of the second substrate holding device 200 are deformed into a convex shape and also into a concave shape, but the present invention is not limited to this.
  • the first holding surface 130a of the first substrate holding device 100 may be deformed into a convex shape and also into a concave shape, while the second holding surface 230a of the second substrate holding device 200 does not have to be concave.
  • a bonding device may be configured by the first substrate holding device 100 and a second substrate holding device having a structure different from that of the first substrate holding device 100.
  • the first substrate holding device 100 which does not have the second support pin 410, is disposed below the second substrate holding device. In other words, it is preferable for the first substrate holding device 100 to hold the lower substrate of the two substrates.
  • the chuck is deformed by moving a movable body fixed to the chuck in the vertical direction, but the present invention is not limited to this.
  • the chuck may be deformed by providing a separate sealed space between the chuck and the base and introducing compressed air into the sealed space or reducing the pressure inside the sealed space.
  • the deformation mechanism includes, for example, a pump or a blower fan.
  • the present invention is suitable for use in substrate holding devices, bonding devices, substrate holding methods, and bonding methods.
  • Bonding apparatus 100 Substrate holding device, first substrate holding device 110: Holding mechanism, first holding mechanism 120: Base, first base 120c: Insertion groove (insertion hole) 120d: inner surface 130: chuck, first chuck 130a: holding surface, first holding surface 160: partition wall 160a: tip surface 170: deformation mechanism, first deformation mechanism 171: moving body 171a: through hole 191: control unit 200: second substrate holding device 210: second holding mechanism 220: second base 230: second chuck 230a: second holding surface 270: second deformation mechanism 400: support pin, first support pin 410: second support pin S, S1, S2: space S120: region S11: step (process of preparing substrate) S14: Step (substrate holding step) S21: Step (step of holding the first substrate) S22: Step (step of holding the second substrate) S24: Step (bonding process) W: Substrate W1: First substrate W2: Second substrate Wa: Front surface Wb: Back surface (one side)

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Abstract

A wafer holding device (100) comprises a holding mechanism (110) and a deformation mechanism (170). The holding mechanism (110) vacuum-picks and holds a wafer (W). The deformation mechanism (170) deforms the holding mechanism (110). The holding mechanism (110) has a chuck (130) and a base (120) to which the chuck (130) is attached. The chuck (130) has a holding surface (130a) that holds the back surface (Wb) of the wafer (W). The deformation mechanism (170) deforms the chuck (130) such that the holding surface (130a) can achieve both a convex shape in which the center of the holding surface (130a) protrudes toward the wafer (W) and a concave shape in which said center is recessed toward the base (120).

Description

基板保持装置、貼り合わせ装置、基板保持方法および貼り合わせ方法Substrate holding device, bonding device, substrate holding method, and bonding method

　本発明は、基板保持装置、貼り合わせ装置、基板保持方法および貼り合わせ方法に関する。 The present invention relates to a substrate holding device, a bonding device, a substrate holding method, and a bonding method.

　従来、基板を保持する基板保持装置が知られている。また、基板を保持する上基板保持装置と、基板を保持する下基板保持装置とを備えた、貼り合わせ装置が知られている（例えば、特許文献１参照）。特許文献１には、上ウエハおよび下ウエハを接合する接合システムが記載されている。接合システムは、上ウエハを保持する第１保持部と、下ウエハを保持する第２保持部とを備える。第１保持部は、上ウエハを保持する上チャックを有する。第２保持部は、下ウエハを保持する下チャックを有する。 　Substrate holding devices that hold substrates are known in the past. Also known is a bonding apparatus that includes an upper substrate holding device that holds a substrate, and a lower substrate holding device that holds a substrate (see, for example, Patent Document 1). Patent Document 1 describes a bonding system that bonds an upper wafer and a lower wafer. The bonding system includes a first holding unit that holds the upper wafer, and a second holding unit that holds the lower wafer. The first holding unit has an upper chuck that holds the upper wafer. The second holding unit has a lower chuck that holds the lower wafer.

　特許文献１の接合システムでは、上チャックを下方向に凸変形させ、下チャックを上方向に凸変形させた状態で、上ウエハと下ウエハとを接合する。つまり、上ウエハのデバイス形成面が凸変形され、下ウエハのデバイス形成面が凸変形された状態で、上ウエハと下ウエハとが接合される。 In the bonding system of Patent Document 1, the upper chuck is deformed convexly downward and the lower chuck is deformed convexly upward, and then the upper and lower wafers are bonded together. In other words, the upper wafer is bonded to the lower wafer while the device formation surface of the upper wafer is deformed convexly and the device formation surface of the lower wafer is deformed convexly.

特開２０２０－５３６８５号公報JP 2020-53685 A

　ところで、ウエハには、反りが生じている。具体的には、通常、ウエハのデバイス形成面は、凸形状になっていたり、凹形状になっていたりする。しかしながら、ウエハのデバイス形成面が例えば凹形状になっている場合に、特許文献１に記載された接合システムのようにデバイス形成面を凸変形させると、ウエハは凹形状から凸形状へと変形することとなり変形の度合いが大きくなる。この場合、ウエハにかかる応力が大きくなるという問題点がある。このため、ウエハに形成された素子の特性に悪影響を及ぼすおそれがある。 By the way, warping occurs in wafers. Specifically, the device formation surface of a wafer is usually either convex or concave. However, when the device formation surface of a wafer is, for example, concave, and the device formation surface is deformed to a convex shape as in the bonding system described in Patent Document 1, the wafer deforms from a concave shape to a convex shape, increasing the degree of deformation. In this case, there is a problem in that the stress applied to the wafer increases. This may have an adverse effect on the characteristics of the elements formed on the wafer.

　また、特許文献１の接合システムではなく一般的な接合システムでは上チャックの下方に設けられた保持面と、下チャックの上方に設けられた保持面の双方がほぼ平坦であることが通常であるが、上チャックや下チャックへのウエハの吸着時においてウエハが反り状態から平坦状態へと変形することに伴ってウエハに応力が付加されウエハに形成された素子の特性に悪影響を及ぼす場合がある。 Furthermore, in a typical bonding system other than the bonding system of Patent Document 1, both the holding surface provided below the upper chuck and the holding surface provided above the lower chuck are usually nearly flat. However, when the wafer is attached to the upper chuck or the lower chuck, the wafer deforms from a warped state to a flat state, which can add stress to the wafer and adversely affect the characteristics of the elements formed on the wafer.

　本発明は上記課題に鑑みてなされたものであり、その目的は、基板に応力がかかることを抑制することが可能な基板保持装置、貼り合わせ装置、基板保持方法および貼り合わせ方法を提供することにある。 The present invention was made in consideration of the above problems, and its purpose is to provide a substrate holding device, a bonding device, a substrate holding method, and a bonding method that can suppress the application of stress to the substrate.

　本発明の第１局面による基板保持装置は、保持機構と、変形機構とを備える。前記保持機構は、基板を吸着して保持する。前記変形機構は、前記保持機構を変形させる。前記保持機構は、チャックと、前記チャックが取り付けられるベースとを有する。前記チャックは、前記基板の一方面を保持する保持面を有する。前記ベースは、前記チャックの前記保持面とは反対側に配置される。前記変形機構は、前記保持面の中央が前記基板側に突出する凸形状、および、前記ベース側に凹む凹形状の両方の形状を前記保持面が実現可能なように前記チャックを変形させる。 A substrate holding device according to a first aspect of the present invention includes a holding mechanism and a deformation mechanism. The holding mechanism adsorbs and holds a substrate. The deformation mechanism deforms the holding mechanism. The holding mechanism includes a chuck and a base to which the chuck is attached. The chuck has a holding surface that holds one side of the substrate. The base is disposed on the opposite side of the chuck from the holding surface. The deformation mechanism deforms the chuck so that the holding surface can assume both a convex shape in which the center of the holding surface protrudes toward the substrate, and a concave shape that is recessed toward the base.

　ある実施形態では、前記変形機構を制御する制御部を備える。前記制御部は、前記基板の少なくとも反り方向を示す反り情報を取得する。前記制御部は、前記反り情報に基づいて前記保持面が前記凸形状または前記凹形状になるように前記変形機構により前記チャックを変形させ、前記保持機構により前記基板を保持させる。 In one embodiment, a control unit is provided that controls the deformation mechanism. The control unit acquires warpage information indicating at least the warpage direction of the substrate. The control unit causes the deformation mechanism to deform the chuck so that the holding surface has the convex shape or the concave shape based on the warpage information, and causes the holding mechanism to hold the substrate.

　ある実施形態では、前記基板は、表面と、前記一方面である裏面とを有する。前記表面は、デバイス形成面である。前記裏面は、前記表面とは反対側に位置し、非デバイス形成面である。前記制御部は、前記基板が基板凹形状であることを前記反り情報が示す場合、前記保持面が前記凹形状になるように前記変形機構により前記チャックを変形させ、前記保持機構により前記基板の前記裏面を保持させる。前記基板凹形状は、前記表面が前記裏面側に凹み、且つ、前記裏面が前記表面とは反対側に突出する形状を示す。 In one embodiment, the substrate has a front surface and a back surface which is the one surface. The front surface is a device forming surface. The back surface is located opposite the front surface and is a non-device forming surface. When the warpage information indicates that the substrate has a concave substrate shape, the control unit causes the deformation mechanism to deform the chuck so that the holding surface has the concave shape, and causes the holding mechanism to hold the back surface of the substrate. The concave substrate shape indicates a shape in which the front surface is recessed towards the back surface and the back surface protrudes to the side opposite the front surface.

　ある実施形態では、前記制御部は、前記基板の前記裏面の中央に前記保持面の中央を点接触させた後、前記変形機構により前記保持面を前記凹形状にし且つ前記保持面の曲率を前記基板の曲率よりも大きくする。 In one embodiment, the control unit brings the center of the holding surface into point contact with the center of the back surface of the substrate, and then causes the deformation mechanism to make the holding surface have the concave shape and the curvature of the holding surface larger than the curvature of the substrate.

　ある実施形態では、前記変形機構は、前記チャックの中央に固定される移動体を有する。前記移動体は、前記チャックと前記ベースとが対向する対向方向に沿って、前記ベースに対して移動する。 In one embodiment, the deformation mechanism has a moving body fixed to the center of the chuck. The moving body moves relative to the base along a direction in which the chuck and the base face each other.

　ある実施形態では、前記移動体は、前記保持面に繋がる貫通孔を有するパイプを含む。前記貫通孔は、前記基板の前記一方面を吸引する吸引孔である。 In one embodiment, the moving body includes a pipe having a through hole connected to the holding surface. The through hole is a suction hole that sucks the one surface of the substrate.

　ある実施形態では、前記チャックと前記ベースとの間の空間を複数の空間に仕切る仕切り壁を備える。前記仕切り壁は、前記チャックから前記ベースに向かって延びる。前記ベースは、前記仕切り壁の一部が挿入される挿入穴を有する。前記保持面が平面状になった状態で、前記仕切り壁の一部は、前記挿入穴に挿入されており、前記挿入穴は、前記仕切り壁が前記挿入穴の内部にさらに挿入可能な領域を有する。前記領域は、前記仕切り壁の先端面と前記挿入穴の内面とによって規定される。 In one embodiment, a partition wall is provided that divides the space between the chuck and the base into a plurality of spaces. The partition wall extends from the chuck toward the base. The base has an insertion hole into which a portion of the partition wall is inserted. When the holding surface is in a planar state, a portion of the partition wall is inserted into the insertion hole, and the insertion hole has an area in which the partition wall can be further inserted inside the insertion hole. The area is defined by the tip surface of the partition wall and the inner surface of the insertion hole.

　本発明の第２局面による貼り合わせ装置は、第１基板と第２基板とを貼り合わせる。前記貼り合わせ装置は、第１基板保持装置と、第２基板保持装置とを備える。前記第１基板保持装置は、前記第１基板を保持する。前記第２基板保持装置は、前記第１基板保持装置に対向して配置され、前記第２基板を保持する。前記第１基板保持装置は、第１基板を吸着して保持する第１保持機構と、前記第１保持機構を変形させる第１変形機構とを有する。前記第１保持機構は、前記第１基板の一方面を保持する第１保持面を有する第１チャックと、前記第１チャックの前記第１保持面とは反対側に配置され、前記第１チャックが取り付けられる第１ベースとを有する。前記第１変形機構は、前記第１保持面の中央が前記第１基板側に突出する凸形状、および、前記第１ベース側に凹む凹形状の両方の形状を前記第１保持面が実現可能なように前記第１チャックを変形させる。 The bonding device according to the second aspect of the present invention bonds a first substrate and a second substrate. The bonding device includes a first substrate holding device and a second substrate holding device. The first substrate holding device holds the first substrate. The second substrate holding device is disposed opposite the first substrate holding device and holds the second substrate. The first substrate holding device has a first holding mechanism that adsorbs and holds the first substrate, and a first deformation mechanism that deforms the first holding mechanism. The first holding mechanism has a first chuck having a first holding surface that holds one side of the first substrate, and a first base that is disposed on the opposite side of the first chuck from the first holding surface and to which the first chuck is attached. The first deformation mechanism deforms the first chuck so that the first holding surface can realize both a convex shape in which the center of the first holding surface protrudes toward the first substrate side, and a concave shape that is recessed toward the first base side.

　ある実施形態では、前記第２基板保持装置は、第２基板を吸着して保持する第２保持機構と、前記第２保持機構を変形させる第２変形機構とを有する。前記第２保持機構は、前記第２基板の一方面を保持する第２保持面を有する第２チャックと、前記第２チャックの前記第２保持面とは反対側に配置され、前記第２チャックが取り付けられる第２ベースとを有する。前記第２変形機構は、前記第２保持面の中央が前記第２基板側に突出する凸形状、および、前記第２ベース側に凹む凹形状の両方の形状を前記第２保持面が実現可能なように前記第２チャックを変形させる。 In one embodiment, the second substrate holding device has a second holding mechanism that adsorbs and holds the second substrate, and a second deformation mechanism that deforms the second holding mechanism. The second holding mechanism has a second chuck having a second holding surface that holds one side of the second substrate, and a second base that is disposed on the opposite side of the second chuck from the second holding surface and to which the second chuck is attached. The second deformation mechanism deforms the second chuck so that the second holding surface can assume both a convex shape in which the center of the second holding surface protrudes toward the second substrate, and a concave shape that is recessed toward the second base.

　ある実施形態では、前記第１基板保持装置および前記第２基板保持装置は、前記第１保持面および前記第２保持面の一方を前記凸形状にし、かつ、前記第１保持面および前記第２保持面の他方を前記凹形状にした状態で、前記第１基板と前記第２基板とを貼り合わせる。 In one embodiment, the first substrate holding device and the second substrate holding device bond the first substrate and the second substrate together while one of the first holding surface and the second holding surface is formed in the convex shape and the other of the first holding surface and the second holding surface is formed in the concave shape.

　ある実施形態では、前記第１保持面の前記凸形状における最大曲率は、前記第１保持面の前記凹形状における最大曲率よりも大きい。 In one embodiment, the maximum curvature of the convex shape of the first holding surface is greater than the maximum curvature of the concave shape of the first holding surface.

　本発明の第３局面による基板保持方法は、基板を準備する工程と、前記基板の一方面を吸着して保持する保持面が凹形状になるように、前記保持面を有するチャックを変形させて、前記チャックにより前記基板を保持する工程とを含む。前記凹形状は、前記保持面の中央が前記基板とは反対側に凹む形状を示す。 The substrate holding method according to the third aspect of the present invention includes the steps of preparing a substrate, and deforming a chuck having a holding surface that adsorbs and holds one side of the substrate so that the holding surface has a concave shape, and holding the substrate with the chuck. The concave shape refers to a shape in which the center of the holding surface is concave on the opposite side to the substrate.

　本発明の第４局面による貼り合わせ方法は、第１基板を準備する工程と、前記第１基板の一方面を吸着して保持する第１保持面が凹形状になるように、前記第１保持面を有する第１チャックを変形させて、前記第１チャックにより前記第１基板を保持する工程と、第２チャックの第２保持面により前記第２基板の一方面を吸着して保持する工程と、前記第１保持面を前記凹形状にし、かつ、前記第１保持面に対向する前記第２保持面を凸形状にした状態で、前記第１基板と前記第２基板とを貼り合わせる工程とを含む。前記第１保持面の前記凹形状は、前記第１保持面の中央が前記第１基板とは反対側に凹む形状を示す。前記第２保持面の前記凸形状は、前記第２保持面の中央が前記第２基板側に突出する形状を示す。 The bonding method according to a fourth aspect of the present invention includes the steps of preparing a first substrate, deforming a first chuck having a first holding surface so that a first holding surface that adsorbs and holds one side of the first substrate is concave, and holding the first substrate with the first chuck, adsorbing and holding one side of the second substrate with a second holding surface of a second chuck, and bonding the first substrate and the second substrate together in a state in which the first holding surface is in the concave shape and the second holding surface opposing the first holding surface is in the convex shape. The concave shape of the first holding surface indicates a shape in which the center of the first holding surface is recessed toward the opposite side to the first substrate. The convex shape of the second holding surface indicates a shape in which the center of the second holding surface protrudes toward the second substrate.

　本発明によれば、基板に応力がかかることを抑制することが可能な基板保持装置、貼り合わせ装置、基板保持方法および貼り合わせ方法を提供できる。 The present invention provides a substrate holding device, a bonding device, a substrate holding method, and a bonding method that can suppress the application of stress to the substrate.

第１実施形態の基板保持装置の全体構成を概略的に示す側面図である。1 is a side view illustrating a schematic overall configuration of a substrate holding device according to a first embodiment. 第１実施形態の基板保持装置を模式的に示す断面図である。1 is a cross-sectional view that illustrates a schematic diagram of a substrate holding device according to a first embodiment. 第１実施形態の基板保持装置のチャックを模式的に示す平面図である。FIG. 2 is a plan view illustrating a chuck of the substrate holding device according to the first embodiment. 図３のＩＶ－ＩＶ線に沿った模式的な断面図であり、支持ピンが突出位置に配置された状態を示す図である。FIG. 4 is a schematic cross-sectional view taken along line IV-IV in FIG. 3, illustrating a state in which the support pin is disposed at a protruding position. 図３のＩＶ－ＩＶ線に沿った模式的な断面図であり、支持ピンが非突出位置に配置された状態を示す図である。FIG. 4 is a schematic cross-sectional view taken along line IV-IV in FIG. 3, illustrating a state in which the support pin is disposed in a non-protruding position. 第１実施形態の基板保持装置のチャックの保持面が凸形状になっている状態を模式的に示す断面図である。4 is a cross-sectional view illustrating a state in which a holding surface of a chuck of the substrate holding device of the first embodiment is formed in a convex shape. FIG. 第１実施形態の基板保持装置のチャックの保持面が凹形状になっている状態を模式的に示す断面図である。4 is a cross-sectional view illustrating a state in which a holding surface of a chuck of the substrate holding device of the first embodiment is formed in a concave shape. FIG. 第１実施形態の基板保持装置の構成を示すブロック図である。1 is a block diagram showing a configuration of a substrate holding device according to a first embodiment; 第１実施形態の基板保持装置による基板保持方法を示すフローチャートである。5 is a flowchart showing a substrate holding method by the substrate holding device of the first embodiment. 表面が凸形状になっている基板を基板保持装置によって保持する方法を説明するための模式的な断面図である。11A to 11C are schematic cross-sectional views for explaining a method for holding a substrate having a convex surface by a substrate holding device. 表面が凹形状になっている基板を基板保持装置によって保持する方法を説明するための模式的な断面図である。11A to 11C are schematic cross-sectional views for explaining a method for holding a substrate having a concave surface by a substrate holding device. 第２実施形態による貼り合わせ装置を模式的に示す側面図である。FIG. 11 is a side view that illustrates a bonding apparatus according to a second embodiment. 第２実施形態の貼り合わせ装置の第１基板保持装置および第２基板保持装置を模式的に示す断面図である。13 is a cross-sectional view that illustrates a first substrate holding device and a second substrate holding device of a bonding apparatus according to a second embodiment. FIG. 第２基板保持装置を模式的に示す断面図であり、支持ピンが突出位置に配置された状態を示す図である。FIG. 13 is a cross-sectional view showing a schematic view of the second substrate holding device, in which the support pins are positioned at the protruding position. 第２実施形態の貼り合わせ装置の構成を示すブロック図である。FIG. 13 is a block diagram showing a configuration of a bonding apparatus according to a second embodiment. 第２施形態の貼り合わせ装置による貼り合わせ方法を示すフローチャートである。10 is a flowchart showing a bonding method performed by the bonding apparatus of the second embodiment. 第２実施形態の貼り合わせ装置による貼り合わせ方法における貼り合わせ工程（ステップＳ２４）を示すフローチャートである。13 is a flowchart showing a bonding step (step S24) in the bonding method by the bonding apparatus of the second embodiment. 第１の組合せパターンにおける貼り合わせ方法を説明するための模式図である。11A to 11C are schematic diagrams for explaining a lamination method in a first combination pattern. 第２の組合せパターンにおける貼り合わせ方法を説明するための模式図である。13A to 13C are schematic diagrams for explaining a bonding method in a second combination pattern. 第３の組合せパターンにおける貼り合わせ方法を説明するための模式図である。13A to 13C are schematic diagrams for explaining a lamination method in a third combination pattern. 第４の組合せパターンにおける貼り合わせ方法を説明するための模式図である。13A to 13C are schematic diagrams for explaining a bonding method in a fourth combination pattern. 第５の組合せパターンにおける貼り合わせ方法を説明するための模式図である。13A to 13C are schematic diagrams for explaining a bonding method in a fifth combination pattern. 第６の組合せパターンにおける貼り合わせ方法を説明するための模式図である。13A and 13B are schematic diagrams for explaining a bonding method in a sixth combination pattern.

　以下、図面を参照して、本発明による基板保持装置および貼り合わせ装置の実施形態を説明する。なお、図中、同一または相当部分については同一の参照符号を付して説明を繰り返さない。本願明細書では、発明の理解を容易にするため、互いに直交するＸ軸、Ｙ軸およびＺ軸を記載することがある。本実施形態では、Ｘ軸およびＹ軸は水平方向に略平行であり、Ｚ軸は鉛直方向に略平行である。また、便宜上、Ｚ軸方向の一方側Ｚ１は上方向を示し、Ｚ軸方向の他方側Ｚ２は下方向を示す。ただし、上方向、および下方向は、説明の便宜上定めるものであり、鉛直方向に一致する必要はない。 Below, an embodiment of a substrate holding device and a bonding device according to the present invention will be described with reference to the drawings. Note that in the drawings, the same or corresponding parts are given the same reference symbols and the description will not be repeated. In this specification, to facilitate understanding of the invention, an X-axis, a Y-axis, and a Z-axis that are perpendicular to each other may be described. In this embodiment, the X-axis and the Y-axis are approximately parallel to the horizontal direction, and the Z-axis is approximately parallel to the vertical direction. Also, for convenience, one side Z1 in the Z-axis direction indicates the upward direction, and the other side Z2 in the Z-axis direction indicates the downward direction. However, the upward and downward directions are defined for convenience of explanation, and do not need to coincide with the vertical direction.

（第１実施形態）
　図１～図１１を参照して、本発明の第１実施形態による基板保持装置１００について説明する。図１は、第１実施形態の基板保持装置１００の全体構成を概略的に示す側面図である。ただし、図１では、図面が複雑になることを抑制するために、複数の支持ピン４００を図４に合わせて２つだけ描いている。 First Embodiment
A substrate holding device 100 according to a first embodiment of the present invention will be described with reference to Figures 1 to 11. Figure 1 is a side view that shows a schematic overall configuration of the substrate holding device 100 of the first embodiment. However, in Figure 1, in order to prevent the drawing from becoming complicated, only two of the multiple support pins 400 are drawn in accordance with Figure 4.

　まず、図１を参照して、基板保持装置１００の概略構成について説明する。図１に示すように、基板保持装置１００は、支持台ＳＢと、保持機構１１０と、変形機構１７０と、吸引機構３００と、複数の支持ピン４００と、ピンアクチュエータ４５０とを備える。 First, the general configuration of the substrate holding device 100 will be described with reference to FIG. 1. As shown in FIG. 1, the substrate holding device 100 includes a support base SB, a holding mechanism 110, a deformation mechanism 170, a suction mechanism 300, a plurality of support pins 400, and a pin actuator 450.

　支持台ＳＢは、上下方向および水平方向に移動しないように構成されている。具体的には、支持台ＳＢは、基板保持装置１００が設置される床ＦＬに固定されている。なお、基板保持装置１００が床材（図示せず）を有し、支持台ＳＢは床材に固定されていてもよい。 The support base SB is configured so as not to move vertically or horizontally. Specifically, the support base SB is fixed to the floor FL on which the substrate holding device 100 is installed. Note that the substrate holding device 100 may have a floor material (not shown), and the support base SB may be fixed to the floor material.

　支持台ＳＢは、保持機構１１０の重さおよび熱によって変形しにくい材料によって形成されている。支持台ＳＢは、例えば、石材または金属フレームによって形成されている。支持台ＳＢの外形は、例えば、略直方体形状を有する。支持台ＳＢには、上下方向に貫通する略直方体形状の貫通孔ＳＢａが形成されている。つまり、支持台ＳＢは、上下方向に延びる矩形の環状に形成されている。 The support base SB is made of a material that is not easily deformed by the weight and heat of the holding mechanism 110. The support base SB is made of, for example, stone or a metal frame. The outer shape of the support base SB is, for example, a roughly rectangular parallelepiped shape. A roughly rectangular parallelepiped through hole SBa is formed in the support base SB, penetrating it in the vertical direction. In other words, the support base SB is formed in the shape of a rectangular ring extending in the vertical direction.

　本実施形態では、支持台ＳＢは、保持機構１１０複数の支持ピン４００を支持する。支持台ＳＢは、保持機構１１０を下方から支持する。支持台ＳＢには、保持機構１１０の外周部がボルト等の固定具（図示せず）によって固定されている。 In this embodiment, the support base SB supports the multiple support pins 400 of the holding mechanism 110. The support base SB supports the holding mechanism 110 from below. The outer periphery of the holding mechanism 110 is fixed to the support base SB by fasteners such as bolts (not shown).

　保持機構１１０は、基板Ｗを吸着して保持する。保持機構１１０は、基板Ｗを略水平に保持する。 The holding mechanism 110 adsorbs and holds the substrate W. The holding mechanism 110 holds the substrate W approximately horizontally.

　基板Ｗは、例えば、半導体ウエハ、液晶表示装置用基板、プラズマディスプレイ用基板、電界放出ディスプレイ（Ｆｉｅｌｄ　Ｅｍｉｓｓｉｏｎ　Ｄｉｓｐｌａｙ：ＦＥＤ）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、または、太陽電池用基板である。本実施形態では、基板Ｗは、半導体ウエハである。 The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. In this embodiment, the substrate W is a semiconductor wafer.

　基板Ｗは、平面視で、例えば、円形状または矩形形状を有する。本実施形態では、基板Ｗは、平面視で略円形状を有する。 The substrate W has, for example, a circular or rectangular shape in a planar view. In this embodiment, the substrate W has an approximately circular shape in a planar view.

　また、本実施形態では、基板Ｗは、表面Ｗａと、表面Ｗａとは反対側に位置する裏面Ｗｂとを有する。表面Ｗａは、素子が形成されたデバイス形成面である。裏面Ｗｂは、素子が形成されていない非デバイス形成面である。なお、裏面Ｗｂは、本発明の「一方面」の一例である。 In this embodiment, the substrate W has a front surface Wa and a back surface Wb located on the opposite side to the front surface Wa. The front surface Wa is a device formation surface on which elements are formed. The back surface Wb is a non-device formation surface on which no elements are formed. The back surface Wb is an example of the "one side" of the present invention.

　本実施形態では、保持機構１１０は、基板Ｗを下方から保持する。また、保持機構１１０は、基板Ｗの裏面Ｗｂを吸着して保持する。このため、基板Ｗが保持機構１１０に保持された状態で、基板Ｗの裏面Ｗｂが下面となり、基板Ｗの表面Ｗａが上面となる。基板Ｗが保持機構１１０に保持されていない状態においては、言うまでもなく、基板Ｗを上下反転させることが可能であるが、本実施形態では、理解を容易にするために、特に説明する場合を除き、基板Ｗを上下反転させないこととする。つまり、本実施形態では、基板Ｗが保持機構１１０に保持されているか否かにかかわらず、基板Ｗの表面Ｗａは上面であり、基板Ｗの裏面Ｗｂは下面であるとする。 In this embodiment, the holding mechanism 110 holds the substrate W from below. The holding mechanism 110 also adsorbs and holds the back surface Wb of the substrate W. Therefore, when the substrate W is held by the holding mechanism 110, the back surface Wb of the substrate W becomes the lower surface, and the front surface Wa of the substrate W becomes the upper surface. Needless to say, when the substrate W is not held by the holding mechanism 110, it is possible to turn the substrate W upside down. However, in this embodiment, for ease of understanding, the substrate W is not turned upside down unless otherwise explained. In other words, in this embodiment, regardless of whether the substrate W is held by the holding mechanism 110 or not, the front surface Wa of the substrate W is the upper surface, and the back surface Wb of the substrate W is the lower surface.

　変形機構１７０の一部は、ボルト等の固定具（図示せず）を用いて、例えば、保持機構１１０の下部に取り付けられている。具体的には、変形機構１７０は、後述するように、移動体１７１および駆動機構１７３を有する。駆動機構１７３は、ボルト等の固定具（図示せず）を用いて、保持機構１１０の下部に取り付けられている。変形機構１７０は、保持機構１１０の一部を変形させる機能を有する。なお、駆動機構１７３は、支持台ＳＢに取り付けられていてもよい。変形機構１７０の構成については、後述する。 A part of the deformation mechanism 170 is attached, for example, to the lower part of the holding mechanism 110 using a fastener such as a bolt (not shown). Specifically, the deformation mechanism 170 has a moving body 171 and a driving mechanism 173, as described below. The driving mechanism 173 is attached to the lower part of the holding mechanism 110 using a fastener such as a bolt (not shown). The deformation mechanism 170 has a function of deforming a part of the holding mechanism 110. The driving mechanism 173 may be attached to the support base SB. The configuration of the deformation mechanism 170 will be described below.

　吸引機構３００の一部は、ボルト等の固定具（図示せず）を用いて、例えば、基板保持装置１００が設置される床ＦＬに取り付けられている。吸引機構３００は、基板Ｗを保持機構１１０に吸着させるための装置であり、空気を吸引する。なお、吸引機構３００の一部は、支持台ＳＢに取り付けられていてもよい。吸引機構３００の構成、および、吸引機構３００による吸引方法については、後述する。 A part of the suction mechanism 300 is attached, for example, to the floor FL on which the substrate holding device 100 is installed, using fasteners such as bolts (not shown). The suction mechanism 300 is a device for adsorbing the substrate W to the holding mechanism 110, and sucks in air. Note that a part of the suction mechanism 300 may be attached to the support base SB. The configuration of the suction mechanism 300 and the suction method used by the suction mechanism 300 will be described later.

　複数の支持ピン４００は、保持機構１１０を上下方向に貫通するように配置されているとともに、保持機構１１０に対して上下方向に移動可能に設けられている。複数の支持ピン４００は、保持機構１１０に保持される前の基板Ｗを支持する。複数の支持ピン４００は、基板Ｗの裏面Ｗｂを吸着して支持する。複数の支持ピン４００は、基板Ｗを下方から支持する。複数の支持ピン４００は、搬送装置ＴＲの搬送アームＴＡから基板Ｗを受け取る。搬送装置ＴＲは、例えば、基板保持装置１００以外の装置、または、基板カセット（図示せず）から基板Ｗを基板保持装置１００に搬送する装置である。 The multiple support pins 400 are arranged to vertically penetrate the holding mechanism 110 and are provided so as to be vertically movable relative to the holding mechanism 110. The multiple support pins 400 support the substrate W before it is held by the holding mechanism 110. The multiple support pins 400 support the back surface Wb of the substrate W by suction. The multiple support pins 400 support the substrate W from below. The multiple support pins 400 receive the substrate W from the transport arm TA of the transport device TR. The transport device TR is, for example, a device other than the substrate holding device 100, or a device that transports the substrate W from a substrate cassette (not shown) to the substrate holding device 100.

　また、複数の支持ピン４００は、搬送装置ＴＲから受け取った基板Ｗを保持機構１１０に渡す。複数の支持ピン４００の構成については、後述する。 The multiple support pins 400 also transfer the substrate W received from the transport device TR to the holding mechanism 110. The configuration of the multiple support pins 400 will be described later.

　ピンアクチュエータ４５０は、ボルト等の固定具（図示せず）を用いて、例えば、保持機構１１０の下部に取り付けられている。ピンアクチュエータ４５０は、複数の支持ピン４００を駆動する。ピンアクチュエータ４５０が複数の支持ピン４００を駆動することによって、複数の支持ピン４００は、搬送装置ＴＲから基板Ｗを受け取ったり、保持機構１１０に基板Ｗを渡したりすることが可能である。なお、ピンアクチュエータ４５０は、支持台ＳＢに取り付けられていてもよい。ピンアクチュエータ４５０の構成については、後述する。 The pin actuator 450 is attached, for example, to the lower part of the holding mechanism 110 using a fastener (not shown) such as a bolt. The pin actuator 450 drives the multiple support pins 400. The pin actuator 450 drives the multiple support pins 400, which enables the multiple support pins 400 to receive a substrate W from the transport device TR and to pass the substrate W to the holding mechanism 110. The pin actuator 450 may be attached to the support base SB. The configuration of the pin actuator 450 will be described later.

　次に、図２を参照して、基板保持装置１００についてさらに説明する。図２は、第１実施形態の基板保持装置１００を模式的に示す断面図である。 Next, the substrate holding device 100 will be further described with reference to FIG. 2. FIG. 2 is a cross-sectional view that shows a schematic diagram of the substrate holding device 100 of the first embodiment.

　図２に示すように、保持機構１１０は、ベース１２０と、チャック１３０と、支持壁１４０と、固定リング１５０と、仕切り壁１６０とを有する。 As shown in FIG. 2, the holding mechanism 110 has a base 120, a chuck 130, a support wall 140, a fixing ring 150, and a partition wall 160.

　ベース１２０は、平面視で略円形状を有する。ベース１２０は、例えば、プレートである。ベース１２０は、上面１２０ａおよび下面１２０ｂを有する。上面１２０ａおよび下面１２０ｂは、略水平に配置されている。 The base 120 has a substantially circular shape in a plan view. The base 120 is, for example, a plate. The base 120 has an upper surface 120a and a lower surface 120b. The upper surface 120a and the lower surface 120b are disposed substantially horizontally.

　ベース１２０は、第１部材１２１と、第２部材１２２とを有する。第１部材１２１は、平面視で略円形状を有する。第２部材１２２は、平面視で環形状を有し、第１部材１２１の外周を囲っている。つまり、第１部材１２１は、ベース１２０のうちの中央部分を構成しており、第２部材１２２は、ベース１２０のうちの外周部分を構成している。なお、本実施形態では、ベース１２０が第１部材１２１と第２部材１２２とを有する例について説明するが、ベース１２０は、第１部材１２１と第２部材１２２とに分かれて形成されていなくてもよいし、第１部材１２１および第２部材１２２と図示しない他の部材とを有してもよい。 The base 120 has a first member 121 and a second member 122. The first member 121 has a substantially circular shape in a plan view. The second member 122 has a ring shape in a plan view, and surrounds the outer periphery of the first member 121. In other words, the first member 121 constitutes the central part of the base 120, and the second member 122 constitutes the outer periphery of the base 120. Note that in this embodiment, an example in which the base 120 has the first member 121 and the second member 122 will be described, but the base 120 does not have to be formed separately into the first member 121 and the second member 122, and may have the first member 121, the second member 122, and other members not shown.

　第１部材１２１は、例えば、セラミックまたは金属により形成されている。第１部材１２１は、略円板形状または略円柱形状を有する。また、第１部材１２１には、変形機構１７０の後述する移動体１７１が挿通される挿通孔１２１ａが形成されている。挿通孔１２１ａは、第１部材１２１を厚み方向（ここでは、上下方向）に貫通している。挿通孔１２１ａは、第１部材１２１の中心に形成されている。また、第１部材１２１には、空気が通過する貫通孔１２１ｂが形成されている。貫通孔１２１ｂは、第１部材１２１を厚み方向に貫通している。貫通孔１２１ｂは、例えば、複数設けられている。また、貫通孔１２１ｂは、挿通孔１２１ａに対して径方向外側に形成されている。 The first member 121 is formed of, for example, ceramic or metal. The first member 121 has a generally disk shape or a generally cylindrical shape. The first member 121 is also formed with an insertion hole 121a through which a moving body 171 of the deformation mechanism 170, which will be described later, is inserted. The insertion hole 121a penetrates the first member 121 in the thickness direction (here, the vertical direction). The insertion hole 121a is formed at the center of the first member 121. The first member 121 is also formed with a through hole 121b through which air passes. The through hole 121b penetrates the first member 121 in the thickness direction. For example, a plurality of through holes 121b are provided. The through hole 121b is also formed radially outward of the insertion hole 121a.

　また、第１部材１２１は、シール溝１２１ｃおよびシール溝１２１ｄを有する。シール溝１２１ｃは、挿通孔１２１ａの内周面に沿って略円環状に形成されている。シール溝１２１ｃは、第１部材１２１の中心軸線を中心として挿通孔１２１ａの内周面に形成された溝である。シール溝１２１ｄは、第１部材１２１の外周面に沿って環状に形成されている。シール溝１２１ｄは、第１部材１２１の中心軸線を中心として第１部材１２１の外周面に形成された溝である。シール溝１２１ｃおよびシール溝１２１ｄは、例えば、切削加工によって形成されている。 The first member 121 also has seal grooves 121c and 121d. Seal groove 121c is formed in a substantially circular ring shape along the inner circumferential surface of insertion hole 121a. Seal groove 121c is a groove formed on the inner circumferential surface of insertion hole 121a with its center at the central axis of the first member 121. Seal groove 121d is formed in a ring shape along the outer circumferential surface of the first member 121. Seal groove 121d is a groove formed on the outer circumferential surface of the first member 121 with its center at the central axis of the first member 121. Seal grooves 121c and 121d are formed, for example, by cutting.

　また、第１部材１２１は、鍔部１２１ｅを有する。鍔部１２１ｅは、第１部材１２１の下部に形成されている。鍔部１２１ｅは、第１部材１２１の他の部分よりも径方向外側に突出する。鍔部１２１ｅの上面は、第２部材１２２の下面に接触しており、鍔部１２１ｅは、第２部材１２２を上下方向に位置決めする機能を有する。 The first member 121 also has a flange 121e. The flange 121e is formed on the lower part of the first member 121. The flange 121e protrudes radially outward further than other parts of the first member 121. The upper surface of the flange 121e contacts the lower surface of the second member 122, and the flange 121e has the function of positioning the second member 122 in the up-down direction.

　第２部材１２２は、例えば、セラミックまたは金属により形成されている。第２部材１２２は、第１部材１２１の周囲を囲う環状に形成されている。本実施形態では、第２部材１２２は、略円環形状または略円筒形状を有する。また、第２部材１２２には、段差部１２２ａが形成されている。段差部１２２ａは、第２部材１２２の内周面に形成されている。そして、第２部材１２２の段差部１２２ａと第１部材１２１の外周面とによって、挿入溝１２０ｃが形成されている。挿入溝１２０ｃは、ベース１２０の上面１２０ａに形成されている。言い換えると、挿入溝１２０ｃは、ベース１２０のうちのチャック１３０に対向する位置に形成されている。また、挿入溝１２０ｃは、上下方向に延びている。なお、挿入溝１２０ｃは、ベース１２０を上下方向に貫通していてもよい。 The second member 122 is formed of, for example, ceramic or metal. The second member 122 is formed in an annular shape surrounding the periphery of the first member 121. In this embodiment, the second member 122 has an approximately annular shape or an approximately cylindrical shape. The second member 122 also has a step portion 122a. The step portion 122a is formed on the inner peripheral surface of the second member 122. The step portion 122a of the second member 122 and the outer peripheral surface of the first member 121 form an insertion groove 120c. The insertion groove 120c is formed on the upper surface 120a of the base 120. In other words, the insertion groove 120c is formed at a position of the base 120 facing the chuck 130. The insertion groove 120c also extends in the vertical direction. The insertion groove 120c may also penetrate the base 120 in the vertical direction.

　また、第２部材１２２には、空気が通過する貫通孔１２２ｂが形成されている。貫通孔１２２ｂは、第２部材１２２を厚み方向（ここでは、上下方向）に貫通する。貫通孔１２２ｂは、例えば、複数設けられている。貫通孔１２２ｂは、挿入溝１２０ｃよりも径方向外側に位置している。 The second member 122 also has a through hole 122b formed therein through which air passes. The through hole 122b passes through the second member 122 in the thickness direction (here, the vertical direction). For example, a plurality of through holes 122b are provided. The through holes 122b are located radially outward of the insertion groove 120c.

　また、第２部材１２２は、シール溝１２２ｃを有する。シール溝１２２ｃは、第２部材１２２の外周縁に沿って、第２部材１２２の上面に略円環状に形成されている。シール溝１２２ｃは、例えば、切削加工によって形成されている。 The second member 122 also has a seal groove 122c. The seal groove 122c is formed in a generally annular shape on the upper surface of the second member 122 along the outer periphery of the second member 122. The seal groove 122c is formed, for example, by cutting.

　チャック１３０は、平面視で略円形状を有する。チャック１３０は、例えば、プレートである。チャック１３０は、ベース１２０の上方に配置されている。チャック１３０は、ベース１２０よりも小さく、チャック１３０の下面は、ベース１２０の上面１２０ａに対向している。また、チャック１３０は、ベース１２０から所定間隔（例えば、５ｍｍ以上）をおいてベース１２０に対して略平行に配置されている。チャック１３０は、例えば、セラミック、樹脂、金属または合成ゴムにより形成されており、数ｍｍ～１０ｍｍ程度撓むことが可能である。 The chuck 130 has a substantially circular shape in a plan view. The chuck 130 is, for example, a plate. The chuck 130 is disposed above the base 120. The chuck 130 is smaller than the base 120, and the lower surface of the chuck 130 faces the upper surface 120a of the base 120. The chuck 130 is disposed substantially parallel to the base 120 at a predetermined distance (for example, 5 mm or more) from the base 120. The chuck 130 is formed, for example, from ceramic, resin, metal, or synthetic rubber, and can bend by several mm to approximately 10 mm.

　チャック１３０は、保持面１３０ａと、保持面１３０ａとは反対側に位置する裏面１３０ｃとを有する。保持面１３０ａは、基板Ｗの裏面Ｗｂ（ここでは、下面）を保持する。本実施形態では、保持面１３０ａは、チャック１３０の上面であり、裏面１３０ｃは、チャック１３０の下面である。基板Ｗの裏面Ｗｂ（ここでは、下面）は、チャック１３０の保持面１３０ａ（ここでは、上面）に接触する面である。 The chuck 130 has a holding surface 130a and a back surface 130c located opposite the holding surface 130a. The holding surface 130a holds the back surface Wb (here, the bottom surface) of the substrate W. In this embodiment, the holding surface 130a is the top surface of the chuck 130, and the back surface 130c is the bottom surface of the chuck 130. The back surface Wb (here, the bottom surface) of the substrate W is the surface that comes into contact with the holding surface 130a (here, the top surface) of the chuck 130.

　図２に示すように、チャック１３０には、空気が通過する貫通孔１３０ｂが形成されている。貫通孔１３０ｂは、チャック１３０の厚み方向（ここでは、上下方向）に貫通する。貫通孔１３０ｂは、例えば、複数設けられている。貫通孔１３０ｂは、チャック１３０のうち基板Ｗが載置される領域の略全域にわたって形成されている。貫通孔１３０ｂは、後述するように、空気を吸引して基板Ｗを吸着するための孔である。 As shown in FIG. 2, the chuck 130 is formed with through holes 130b through which air passes. The through holes 130b penetrate the chuck 130 in the thickness direction (here, the vertical direction). For example, a plurality of through holes 130b are provided. The through holes 130b are formed over substantially the entire area of the chuck 130 on which the substrate W is placed. The through holes 130b are holes for sucking in air and adsorbing the substrate W, as described below.

　支持壁１４０は、チャック１３０を支持する。本実施形態では、支持壁１４０とチャック１３０とは、単一の部材によって形成されている。なお、支持壁１４０は、チャック１３０とは別々の部材で設けられていてもよい。 The support wall 140 supports the chuck 130. In this embodiment, the support wall 140 and the chuck 130 are formed from a single member. Note that the support wall 140 may be formed from a separate member from the chuck 130.

　支持壁１４０は、チャック１３０の外周端部からベース１２０に向かって延びている。本実施形態では、支持壁１４０は、チャック１３０の外周端部から下方向に延びている。支持壁１４０の下端部は、ベース１２０の上面１２０ａに固定されており、支持壁１４０の上端部は、チャック１３０に接続されている。よって、チャック１３０は、ベース１２０から上方に所定距離をおいて配置されている。 The support wall 140 extends from the outer peripheral end of the chuck 130 toward the base 120. In this embodiment, the support wall 140 extends downward from the outer peripheral end of the chuck 130. The lower end of the support wall 140 is fixed to the upper surface 120a of the base 120, and the upper end of the support wall 140 is connected to the chuck 130. Thus, the chuck 130 is positioned a predetermined distance above the base 120.

　支持壁１４０は、チャック１３０の外周端に沿った略円環状に形成されている。つまり、支持壁１４０は、略円環状の壁である。そして、ベース１２０、チャック１３０および支持壁１４０によって、空間Ｓが形成されている。 The support wall 140 is formed in a substantially annular shape along the outer peripheral edge of the chuck 130. In other words, the support wall 140 is a substantially annular wall. A space S is formed by the base 120, the chuck 130, and the support wall 140.

　また、支持壁１４０は、鍔部１４１を有する。鍔部１４１は、支持壁１４０の下部に形成されている。鍔部１４１は、支持壁１４０の他の部分よりも径方向外側に突出する。 Furthermore, the support wall 140 has a flange portion 141. The flange portion 141 is formed on the lower portion of the support wall 140. The flange portion 141 protrudes radially outward beyond other portions of the support wall 140.

　固定リング１５０は、例えば、略円環形状を有し、支持壁１４０の外周面に沿って配置されている。固定リング１５０は、鍔部１４１をベース１２０の上面１２０ａに固定している。具体的には、固定リング１５０は、断面視略Ｌ字形状を有し、鍔部１４１に係合している。言い換えると、固定リング１５０の内周面には、鍔部１４１に係合する段差が形成されている。固定リング１５０は、例えば、ネジによりベース１２０に固定されている。つまり、固定リング１５０がベース１２０に固定されていることにより、鍔部１４１がベース１２０に固定されている。 The fixing ring 150 has, for example, a generally circular ring shape and is disposed along the outer peripheral surface of the support wall 140. The fixing ring 150 fixes the flange portion 141 to the upper surface 120a of the base 120. Specifically, the fixing ring 150 has a generally L-shape in cross section and engages with the flange portion 141. In other words, a step that engages with the flange portion 141 is formed on the inner peripheral surface of the fixing ring 150. The fixing ring 150 is fixed to the base 120 by, for example, a screw. In other words, the fixing ring 150 is fixed to the base 120, and thus the flange portion 141 is fixed to the base 120.

　仕切り壁１６０は、チャック１３０からベース１２０に向かって延びている。具体的には、仕切り壁１６０は、チャック１３０の下面である裏面１３０ｃからベース１２０に向かって延びている。仕切り壁１６０は、略円環状に形成されている。また、仕切り壁１６０は、ベース１２０の挿入溝１２０ｃに対応する位置に形成されており、仕切り壁１６０の上下方向の長さは、支持壁１４０の上下方向の長さよりも長い。このため、仕切り壁１６０の先端は、挿入溝１２０ｃに挿入されている。 The partition wall 160 extends from the chuck 130 toward the base 120. Specifically, the partition wall 160 extends from the back surface 130c, which is the lower surface of the chuck 130, toward the base 120. The partition wall 160 is formed in a substantially circular ring shape. The partition wall 160 is formed at a position corresponding to the insertion groove 120c of the base 120, and the vertical length of the partition wall 160 is longer than the vertical length of the support wall 140. Therefore, the tip of the partition wall 160 is inserted into the insertion groove 120c.

　ここで、本実施形態では、チャック１３０の保持面１３０ａが平面状になっている状態（図２の状態）で、仕切り壁１６０の一部が挿入溝１２０ｃに挿入されているとともに、挿入溝１２０ｃは、仕切り壁１６０が挿入溝１２０ｃの内部にさらに挿入可能な領域Ｓ１２０を有する。領域Ｓ１２０は、仕切り壁１６０の先端面１６０ａと挿入溝１２０ｃの内面１２０ｄとによって規定されている。つまり、保持面１３０ａを平面状にした状態で、挿入溝１２０ｃの奥面（図２では下面）と仕切り壁１６０の先端面１６０ａ（図２では下面）との間には、隙間が形成されている。従って、仕切り壁１６０を挿入溝１２０ｃの内部にさらに挿入することが可能である。仕切り壁１６０を挿入溝１２０ｃの内部にさらに挿入することによって、後述するように、保持面１３０ａを容易に凹形状にすることができる。 Here, in this embodiment, when the holding surface 130a of the chuck 130 is in a planar state (as shown in FIG. 2), a part of the partition wall 160 is inserted into the insertion groove 120c, and the insertion groove 120c has an area S120 in which the partition wall 160 can be further inserted into the insertion groove 120c. The area S120 is defined by the tip surface 160a of the partition wall 160 and the inner surface 120d of the insertion groove 120c. In other words, when the holding surface 130a is in a planar state, a gap is formed between the inner surface (the lower surface in FIG. 2) of the insertion groove 120c and the tip surface 160a (the lower surface in FIG. 2) of the partition wall 160. Therefore, it is possible to further insert the partition wall 160 into the insertion groove 120c. By further inserting the partition wall 160 into the insertion groove 120c, as described later, the holding surface 130a can be easily made concave.

　また、本実施形態では、仕切り壁１６０とチャック１３０とは単一の部材によって形成されている。また、本実施形態では、仕切り壁１６０とチャック１３０と支持壁１４０とは、単一の部材によって形成されている。なお、仕切り壁１６０は、チャック１３０とは別々の部材で設けられていてもよい。 In addition, in this embodiment, the partition wall 160 and the chuck 130 are formed from a single member. In addition, in this embodiment, the partition wall 160, the chuck 130, and the support wall 140 are formed from a single member. Note that the partition wall 160 may be provided as a separate member from the chuck 130.

　変形機構１７０は、保持機構１１０を変形させる。また、変形機構１７０は、保持面１３０ａの中央が基板Ｗに向かう方向（ここでは、上方向）に突出する凸形状になるように、チャック１３０を変形させる。また、変形機構１７０は、保持面１３０ａの中央が基板Ｗから遠ざかる方向（ここでは、下方向）に凹む凹形状になるように、チャック１３０を変形させる。つまり、変形機構１７０は、保持面１３０ａが凸形状になるようにチャック１３０を変形させたり、保持面１３０ａが凹形状になるようにチャック１３０を変形させたりする。以下、保持面１３０ａの中央が基板Ｗに向かう方向（ここでは、上方向）に突出するように保持面１３０ａが湾曲することを、保持面１３０ａが凸形状になると記載することがある。また、保持面１３０ａの中央が基板Ｗから遠ざかる方向（ここでは、下方向）に凹むように保持面１３０ａが湾曲することを、保持面１３０ａが凹形状になると記載することがある。 The deformation mechanism 170 deforms the holding mechanism 110. The deformation mechanism 170 also deforms the chuck 130 so that the center of the holding surface 130a has a convex shape that protrudes in the direction toward the substrate W (here, upward). The deformation mechanism 170 also deforms the chuck 130 so that the center of the holding surface 130a has a concave shape that is recessed in the direction away from the substrate W (here, downward). In other words, the deformation mechanism 170 deforms the chuck 130 so that the holding surface 130a has a convex shape, or deforms the chuck 130 so that the holding surface 130a has a concave shape. Hereinafter, the holding surface 130a being curved so that the center of the holding surface 130a protrudes in the direction toward the substrate W (here, upward) may be described as the holding surface 130a having a convex shape. In addition, when the holding surface 130a is curved such that the center of the holding surface 130a is recessed in a direction away from the substrate W (here, downward), this is sometimes described as the holding surface 130a having a concave shape.

　具体的には、変形機構１７０は、移動体１７１と、固定部材１７２と、駆動機構１７３とを有する。移動体１７１は、例えば、樹脂または金属により形成されている。移動体１７１は、例えば、棒状、柱状または軸状に形成されている。本実施形態では、移動体１７１は、円筒形状を有し、上下方向に延びるように配置されている。移動体１７１は、第１部材１２１の挿通孔１２１ａに挿通されている。つまり、移動体１７１の下端は、第１部材１２１の挿通孔１２１ａから下方に突出している。移動体１７１の上端は、第１部材１２１の挿通孔１２１ａから上方に突出している。 Specifically, the deformation mechanism 170 has a moving body 171, a fixed member 172, and a driving mechanism 173. The moving body 171 is formed, for example, from resin or metal. The moving body 171 is formed, for example, in a rod-like, columnar, or shaft-like shape. In this embodiment, the moving body 171 has a cylindrical shape and is arranged so as to extend in the vertical direction. The moving body 171 is inserted into the insertion hole 121a of the first member 121. In other words, the lower end of the moving body 171 protrudes downward from the insertion hole 121a of the first member 121. The upper end of the moving body 171 protrudes upward from the insertion hole 121a of the first member 121.

　移動体１７１の上端部は、チャック１３０の裏面１３０ｃ（図２では、下面）の中央に直接固定されていてもよいし、固定部材等を介して固定されていてもよい。本実施形態では、移動体１７１の上端部は、チャック１３０の裏面１３０ｃの中央に固定部材１７２を介して固定されている。具体的には、固定部材１７２は、移動体１７１とチャック１３０との間に配置されている。固定部材１７２は、接着材またはネジ等によってチャック１３０の裏面１３０ｃに固定されている。また、固定部材１７２は、接着材またはネジ等によって移動体１７１の上端部に固定されている。固定部材１７２は、例えば、金属により形成されている。また、本実施形態では、固定部材１７２は、移動体１７１とチャック１３０との間をシールするシール部材としても機能している。 The upper end of the moving body 171 may be fixed directly to the center of the back surface 130c (the lower surface in FIG. 2) of the chuck 130, or may be fixed via a fixing member or the like. In this embodiment, the upper end of the moving body 171 is fixed to the center of the back surface 130c of the chuck 130 via a fixing member 172. Specifically, the fixing member 172 is disposed between the moving body 171 and the chuck 130. The fixing member 172 is fixed to the back surface 130c of the chuck 130 by an adhesive, a screw, or the like. The fixing member 172 is also fixed to the upper end of the moving body 171 by an adhesive, a screw, or the like. The fixing member 172 is formed of, for example, a metal. In this embodiment, the fixing member 172 also functions as a sealing member that seals between the moving body 171 and the chuck 130.

　移動体１７１は、チャック１３０とベース１２０とが対向する対向方向（ここでは、上下方向）に沿って、ベース１２０に対して移動可能である。 The movable body 171 is movable relative to the base 120 along the opposing direction (here, the up-down direction) in which the chuck 130 and the base 120 face each other.

　駆動機構１７３は、移動体１７１をベース１２０に対して相対的に上下方向に移動させる。駆動機構１７３は、アクチュエータを有する。駆動機構１７３は、特に限定されるものではないが、例えば、ポンプまたはモータ等の駆動源と、駆動源の駆動力を移動体１７１に伝達するギアおよび／またはカム等の伝達部材とを有する。駆動機構１７３は、例えば、ベース１２０の下面１２０ｂに固定されている。駆動機構１７３が駆動することによって、移動体１７１がベース１２０に対して相対的に上下方向に移動する。これにより、チャック１３０が変形する。チャック１３０の変形については、後述する。なお、図面が複雑になることを抑制するために、特に必要な場合を除き、図３以降において駆動機構１７３を省略することがある。 The driving mechanism 173 moves the moving body 171 in the vertical direction relative to the base 120. The driving mechanism 173 has an actuator. The driving mechanism 173 is not particularly limited, but has, for example, a driving source such as a pump or a motor, and a transmission member such as a gear and/or a cam that transmits the driving force of the driving source to the moving body 171. The driving mechanism 173 is fixed, for example, to the lower surface 120b of the base 120. When the driving mechanism 173 is driven, the moving body 171 moves in the vertical direction relative to the base 120. This causes the chuck 130 to deform. The deformation of the chuck 130 will be described later. Note that, in order to prevent the drawings from becoming complicated, the driving mechanism 173 may be omitted from FIG. 3 onwards, unless it is particularly necessary.

　また、本実施形態では、移動体１７１は、保持面１３０ａに繋がる貫通孔１７１ａを有するパイプを含む。貫通孔１７１ａは、移動体１７１の延びる方向に、移動体１７１の内部を貫通している。貫通孔１７１ａには、空気が通過する。貫通孔１７１ａは、基板Ｗを吸引する吸引孔である。本実施形態では、固定部材１７２には、空気が通過する貫通孔１７２ａが形成されている。貫通孔１７２ａは、移動体１７１の貫通孔１７１ａに繋がっている。また、本実施形態では、チャック１３０の１つの貫通孔１３０ｂは、固定部材１７２の貫通孔１７２ａを介して移動体１７１の貫通孔１７１ａに繋がっている。貫通孔１７１ａに繋がる貫通孔１３０ｂは、チャック１３０の中心に形成されている。 In this embodiment, the moving body 171 includes a pipe having a through hole 171a connected to the holding surface 130a. The through hole 171a penetrates the inside of the moving body 171 in the direction in which the moving body 171 extends. Air passes through the through hole 171a. The through hole 171a is a suction hole that sucks the substrate W. In this embodiment, the fixed member 172 has a through hole 172a through which air passes. The through hole 172a is connected to the through hole 171a of the moving body 171. In this embodiment, one through hole 130b of the chuck 130 is connected to the through hole 171a of the moving body 171 via the through hole 172a of the fixed member 172. The through hole 130b connected to the through hole 171a is formed in the center of the chuck 130.

　引き続き図２を参照して、保持機構１１０について説明する。保持機構１１０は、シール部材１２３ａ、シール部材１２３ｂおよびシール部材１２３ｃを有する。シール部材１２３ａ、シール部材１２３ｂおよびシール部材１２３ｃの各々は、例えば、ゴム等の弾性部材により形成されている。また、シール部材１２３ａ、シール部材１２３ｂおよびシール部材１２３ｃの各々は、例えば、Ｏリングである。 Continuing to refer to FIG. 2, the holding mechanism 110 will be described. The holding mechanism 110 has a seal member 123a, a seal member 123b, and a seal member 123c. Each of the seal members 123a, 123b, and 123c is formed of an elastic member such as rubber. Each of the seal members 123a, 123b, and 123c is, for example, an O-ring.

　シール部材１２３ａは、シール溝１２１ｃ内に配置されている。シール部材１２３ａは、シール溝１２１ｃ内に配置された状態で、移動体１７１の外周面に接触している。シール部材１２３ａは、移動体１７１と第１部材１２１との間をシールしている。シール部材１２３ｂは、シール溝１２１ｄ内に配置されている。シール部材１２３ｂは、シール溝１２１ｄ内に配置された状態で、仕切り壁１６０の内周面に接触している。シール部材１２３ｂは、第１部材１２１と仕切り壁１６０との間をシールしている。シール部材１２３ｃは、シール溝１２２ｃ内に配置されている。シール部材１２３ｃは、シール溝１２２ｃ内に配置された状態で、支持壁１４０の下面に接触している。シール部材１２３ｃは、支持壁１４０と第２部材１２２との間をシールしている。吸引機構３００により空間Ｓ内を減圧した際に、移動体１７１と第１部材１２１との間、第１部材１２１と仕切り壁１６０との間、および、支持壁１４０と第２部材１２２との間から、空間Ｓ内に空気が流入することを抑制できる。 Sealing member 123a is disposed in seal groove 121c. When disposed in seal groove 121c, sealing member 123a is in contact with the outer peripheral surface of moving body 171. Sealing member 123a provides a seal between moving body 171 and first member 121. Sealing member 123b is disposed in seal groove 121d. When disposed in seal groove 121d, sealing member 123b is in contact with the inner peripheral surface of partition wall 160. Sealing member 123b provides a seal between first member 121 and partition wall 160. Sealing member 123c is disposed in seal groove 122c. When disposed in seal groove 122c, sealing member 123c is in contact with the lower surface of support wall 140. Sealing member 123c provides a seal between support wall 140 and second member 122. When the pressure in the space S is reduced by the suction mechanism 300, air can be prevented from flowing into the space S from between the moving body 171 and the first member 121, between the first member 121 and the partition wall 160, and between the support wall 140 and the second member 122.

　吸引機構３００は、貫通孔１７１ａ、貫通孔１２１ｂおよび貫通孔１２２ｂに接続されており、空気を吸引する。具体的には、吸引機構３００は、貫通孔１７１ａ、貫通孔１２１ｂおよび貫通孔１２２ｂに接続される配管３０１ａと、吸引装置３０２と、バルブ３１０ａとを有する。吸引装置３０２は、ボルト等の固定具（図示せず）を用いて、例えば、基板保持装置１００が設置される床ＦＬに取り付けられている。吸引装置３０２は、例えば、吸引ポンプまたは排気ファンを有する。なお、基板保持装置１００は、吸引装置３０２を有していなくてもよい。例えば、基板保持装置１００の外部の吸引装置３０２に配管３０１ａが接続されていてもよい。バルブ３１０ａは、配管３０１ａに設けられており、配管３０１ａ内を開状態または閉状態に切り替える。 The suction mechanism 300 is connected to the through holes 171a, 121b, and 122b, and sucks in air. Specifically, the suction mechanism 300 has a pipe 301a connected to the through holes 171a, 121b, and 122b, a suction device 302, and a valve 310a. The suction device 302 is attached to, for example, the floor FL on which the substrate holding device 100 is installed, using a fastener such as a bolt (not shown). The suction device 302 has, for example, a suction pump or an exhaust fan. Note that the substrate holding device 100 does not need to have the suction device 302. For example, the pipe 301a may be connected to the suction device 302 outside the substrate holding device 100. The valve 310a is provided in the pipe 301a, and switches the inside of the pipe 301a between an open state and a closed state.

　吸引装置３０２が駆動し、かつ、バルブ３１０ａが開いた状態で、貫通孔１２１ｂおよび貫通孔１２２ｂを介して空間Ｓ内の空気が吸引され、空間Ｓ内が負圧になる。このため、チャック１３０のうちの空間Ｓに繋がる貫通孔１３０ｂから空間Ｓ内に空気が流入する。また、吸引装置３０２が駆動し、かつ、バルブ３１０ａが開いた状態で、貫通孔１７１ａ内の空気が吸引され、貫通孔１７１ａ内が負圧になる。このため、チャック１３０のうちの貫通孔１７１ａに繋がる貫通孔１３０ｂから貫通孔１７１ａ内に空気が流入する。従って、吸引装置３０２が駆動し、かつ、バルブ３１０ａが開いた状態で、基板Ｗをチャック１３０の保持面１３０ａに近づけると、基板Ｗの裏面Ｗｂがチャック１３０の保持面１３０ａに吸着される。 When the suction device 302 is driven and the valve 310a is open, the air in the space S is sucked in through the through holes 121b and 122b, creating a negative pressure in the space S. As a result, air flows into the space S from the through hole 130b in the chuck 130 that is connected to the space S. Also, when the suction device 302 is driven and the valve 310a is open, the air in the through hole 171a is sucked in, creating a negative pressure in the through hole 171a. As a result, air flows into the through hole 171a from the through hole 130b that is connected to the through hole 171a in the chuck 130. Therefore, when the suction device 302 is driven and the valve 310a is open, the back surface Wb of the substrate W is adsorbed to the holding surface 130a of the chuck 130.

　次に、図３を参照して、チャック１３０および仕切り壁１６０についてさらに説明する。図３は、第１実施形態の基板保持装置１００のチャック１３０を模式的に示す平面図である。図２および図３に示すように、仕切り壁１６０は、空間Ｓを複数の空間に仕切っている。本実施形態では、仕切り壁１６０は、空間Ｓを２つの空間Ｓ１および空間Ｓ２に仕切っている。空間Ｓ１は、空間Ｓのうちの中央の円形状の空間である。空間Ｓ２は、空間Ｓのうちの外側に位置する円環状の空間である。なお、本実施形態では、１つの仕切り壁１６０によって空間Ｓを２つの空間Ｓ１および空間Ｓ２に仕切る例について説明するが、例えば、１つ以上の仕切り壁１６０によって空間Ｓを３つ以上の空間に仕切っていてもよい。 Next, the chuck 130 and the partition wall 160 will be further described with reference to FIG. 3. FIG. 3 is a plan view that shows a schematic diagram of the chuck 130 of the substrate holding device 100 of the first embodiment. As shown in FIGS. 2 and 3, the partition wall 160 divides the space S into a plurality of spaces. In this embodiment, the partition wall 160 divides the space S into two spaces S1 and S2. The space S1 is a circular space in the center of the space S. The space S2 is an annular space located on the outside of the space S. Note that, in this embodiment, an example in which the space S is divided into two spaces S1 and S2 by one partition wall 160 will be described, but the space S may be divided into three or more spaces by one or more partition walls 160, for example.

　また、チャック１３０の１つ以上の貫通孔１３０ｂは、チャック１３０のうちの仕切り壁１６０よりも径方向内側の位置に形成されている。言い換えると、１つ以上の貫通孔１３０ｂは、空間Ｓ１と外部空間とを接続している。本実施形態では、複数の貫通孔１３０ｂは、チャック１３０のうちの仕切り壁１６０よりも径方向内側の位置に形成されている。 Furthermore, one or more through holes 130b of the chuck 130 are formed at a position radially inward of the partition wall 160 of the chuck 130. In other words, the one or more through holes 130b connect the space S1 to the external space. In this embodiment, the multiple through holes 130b are formed at a position radially inward of the partition wall 160 of the chuck 130.

　また、チャック１３０の１つ以上の貫通孔１３０ｂは、チャック１３０のうちの仕切り壁１６０よりも径方向外側の位置に形成されている。言い換えると、１つ以上の貫通孔１３０ｂは、空間Ｓ２と外部空間とを接続している。本実施形態では、複数の貫通孔１３０ｂは、チャック１３０のうちの仕切り壁１６０よりも径方向外側の位置に形成されている。 Furthermore, one or more through holes 130b of the chuck 130 are formed at a position radially outward from the partition wall 160 of the chuck 130. In other words, the one or more through holes 130b connect the space S2 to the external space. In this embodiment, the multiple through holes 130b are formed at a position radially outward from the partition wall 160 of the chuck 130.

　また、本実施形態では、貫通孔１３０ｂは、貫通孔１３０ｄと、支持ピン４００が挿通される複数の貫通孔１３０ｅと、支持ピン４００が挿通されない複数の貫通孔１３０ｆとを含んでいる。本実施形態では、貫通孔１３０ｄは、チャック１３０の中心に形成されている。複数の貫通孔１３０ｅは、チャック１３０の周縁部に形成されている。複数の貫通孔１３０ｆは、チャック１３０の全域に形成されている。 In addition, in this embodiment, through hole 130b includes through hole 130d, a plurality of through holes 130e through which support pins 400 are inserted, and a plurality of through holes 130f through which support pins 400 are not inserted. In this embodiment, through hole 130d is formed in the center of chuck 130. The plurality of through holes 130e are formed on the periphery of chuck 130. The plurality of through holes 130f are formed throughout the entire area of chuck 130.

　次に、図４および図５を参照して、複数の支持ピン４００について説明する。図４は、図３のＩＶ－ＩＶ線に沿った模式的な断面図であり、支持ピン４００が突出位置Ｐ１に配置された状態を示す図である。図５は、図３のＩＶ－ＩＶ線に沿った模式的な断面図であり、支持ピン４００が非突出位置Ｐ２に配置された状態を示す図である。図４に示すように、複数の支持ピン４００は、保持機構１１０に保持される前の基板Ｗを支持する。本実施形態では、複数の支持ピン４００は、基板Ｗの裏面Ｗｂ（ここでは、下面）を支持する。複数の支持ピン４００は、基板Ｗを支持し、保持機構１１０に基板Ｗを渡す。具体的には、複数の支持ピン４００は、例えば、搬送装置ＴＲから基板Ｗを渡されてもよい。なお、基板保持装置１００は、複数の支持ピン４００を有しなくてもよい。 Next, the multiple support pins 400 will be described with reference to Figures 4 and 5. Figure 4 is a schematic cross-sectional view taken along line IV-IV in Figure 3, showing a state in which the support pin 400 is disposed at the protruding position P1. Figure 5 is a schematic cross-sectional view taken along line IV-IV in Figure 3, showing a state in which the support pin 400 is disposed at the non-protruding position P2. As shown in Figure 4, the multiple support pins 400 support the substrate W before it is held by the holding mechanism 110. In this embodiment, the multiple support pins 400 support the back surface Wb (here, the lower surface) of the substrate W. The multiple support pins 400 support the substrate W and transfer the substrate W to the holding mechanism 110. Specifically, the multiple support pins 400 may transfer the substrate W from, for example, the transport device TR. Note that the substrate holding device 100 does not have to have the multiple support pins 400.

　本実施形態では、複数の支持ピン４００は、上下方向に延びる複数（ここでは、４つ）の支持ピン４００を含む。支持ピン４００は、平面視で等角度間隔に配置されている。支持ピン４００は、基板Ｗの裏面Ｗｂ（ここでは、下面）を支持する。なお、支持ピン４００は、空気が通過する貫通孔（図示せず）を有し、複数の支持ピン４００は、基板Ｗを吸引してもよい。本実施形態では、支持ピン４００は、貫通孔（図示せず）を有しない。 In this embodiment, the multiple support pins 400 include multiple (here, four) support pins 400 extending in the vertical direction. The support pins 400 are arranged at equal angular intervals in a plan view. The support pins 400 support the back surface Wb (here, the bottom surface) of the substrate W. Note that the support pins 400 have through holes (not shown) through which air passes, and the multiple support pins 400 may suck the substrate W. In this embodiment, the support pins 400 do not have through holes (not shown).

　本実施形態では、１つ以上（ここでは、４つ）の貫通孔１３０ｅは、貫通孔１２２ｂの上方に位置している。支持ピン４００は、貫通孔１２２ｂと貫通孔１３０ｅとに挿通されている。 In this embodiment, one or more (four in this example) through holes 130e are located above through holes 122b. The support pin 400 is inserted through through holes 122b and 130e.

　支持ピン４００は、例えば、保持面１３０ａから上方に突出する突出位置Ｐ１（図４参照）と、保持面１３０ａから上方に突出しない非突出位置Ｐ２（図５参照）との間で移動可能である。本実施形態では、複数（ここでは、４つ）の支持ピン４００は、連結部材（図示せず）により互いに連結されている。このため、複数（ここでは、４つ）の支持ピン４００が一体となって上下方向に移動する。 The support pin 400 can move, for example, between a protruding position P1 (see FIG. 4) where it protrudes upward from the holding surface 130a, and a non-protruding position P2 (see FIG. 5) where it does not protrude upward from the holding surface 130a. In this embodiment, the multiple (four in this case) support pins 400 are connected to each other by a connecting member (not shown). Therefore, the multiple (four in this case) support pins 400 move vertically as a unit.

　具体的には、基板保持装置１００は、上述したように、支持ピン４００を上下方向に移動させるピンアクチュエータ４５０を有する。ピンアクチュエータ４５０は、例えば、ベース１２０の下面１２０ｂに固定されている。ピンアクチュエータ４５０は、特に限定されるものではないが、例えば、ポンプまたはモータ等の駆動源と、駆動源の駆動力を支持ピン４００の下部に伝達するギアおよび／またはカム等の伝達部材とを有する。ピンアクチュエータ４５０が駆動することによって、支持ピン４００がベース１２０に対して上下方向に移動する。例えば、ピンアクチュエータ４５０が支持ピン４００を突出位置Ｐ１に移動させることにより、支持ピン４００は、保持面１３０ａから突出し、搬送装置ＴＲから基板Ｗを受けとることが可能となる。つまり、支持ピン４００は、突出位置Ｐ１で基板Ｗを受け取る。支持ピン４００は、搬送装置ＴＲから基板Ｗを受け取る場合、保持面１３０ａから例えば１０ｍｍ以上突出した状態で、基板Ｗを受け取る。このとき、全ての支持ピン４００の先端の高さ位置は、略一定である。また、例えば、ピンアクチュエータ４５０が支持ピン４００を突出位置Ｐ１から非突出位置Ｐ２に移動させることにより、支持ピン４００は、保持面１３０ａから突出しなくなる。これにより、基板Ｗが保持面１３０ａの上方の位置から下方向に移動されるため、支持ピン４００から保持面１３０ａに基板Ｗが渡される。 Specifically, as described above, the substrate holding device 100 has a pin actuator 450 that moves the support pin 400 in the vertical direction. The pin actuator 450 is fixed to, for example, the lower surface 120b of the base 120. The pin actuator 450 is not particularly limited, but has, for example, a driving source such as a pump or a motor, and a transmission member such as a gear and/or a cam that transmits the driving force of the driving source to the lower part of the support pin 400. The support pin 400 moves in the vertical direction relative to the base 120 when the pin actuator 450 is driven. For example, the support pin 400 moves to the protruding position P1 by the pin actuator 450, so that the support pin 400 protrudes from the holding surface 130a and can receive the substrate W from the transport device TR. That is, the support pin 400 receives the substrate W at the protruding position P1. When the support pin 400 receives the substrate W from the transport device TR, the support pin 400 receives the substrate W in a state in which it protrudes, for example, 10 mm or more from the holding surface 130a. At this time, the height positions of the tips of all the support pins 400 are approximately constant. Also, for example, the pin actuator 450 moves the support pins 400 from the protruding position P1 to the non-protruding position P2, so that the support pins 400 no longer protrude from the holding surface 130a. As a result, the substrate W is moved downward from a position above the holding surface 130a, and the substrate W is transferred from the support pins 400 to the holding surface 130a.

　次に、図６および図７を参照して、チャック１３０の保持面１３０ａの変形について説明する。図６は、第１実施形態の基板保持装置１００のチャック１３０の保持面１３０ａが凸形状になっている状態を模式的に示す断面図である。図７は、第１実施形態の基板保持装置１００のチャック１３０の保持面１３０ａが凹形状になっている状態を模式的に示す断面図である。 Next, the deformation of the holding surface 130a of the chuck 130 will be described with reference to Figures 6 and 7. Figure 6 is a cross-sectional view that shows a schematic state in which the holding surface 130a of the chuck 130 of the substrate holding device 100 of the first embodiment has a convex shape. Figure 7 is a cross-sectional view that shows a schematic state in which the holding surface 130a of the chuck 130 of the substrate holding device 100 of the first embodiment has a concave shape.

　図６および図７に示すように、本実施形態では、チャック１３０は、保持面１３０ａが凸形状になるように変形可能であるとともに、保持面１３０ａが凹形状になるように変形可能である。保持面１３０ａが凸形状になるとは、図６に示すように、保持面１３０ａの中央が基板Ｗに向かう方向（ここでは、上方向）に突出するように、保持面１３０ａが湾曲することを意味する。つまり、保持面１３０ａの凸形状は、保持面１３０ａの中央が基板Ｗに向かう方向に突出する形状を示す。保持面１３０ａが凹形状になるとは、図７に示すように、保持面１３０ａの中央が基板Ｗから遠ざかる方向（ここでは、下方向）に凹むように、保持面１３０ａが湾曲することを意味する。つまり、保持面１３０ａの凹形状は、保持面１３０ａの中央が基板Ｗから遠ざかる方向に凹む形状を示す。 6 and 7, in this embodiment, the chuck 130 can be deformed so that the holding surface 130a has a convex shape, and can also be deformed so that the holding surface 130a has a concave shape. The holding surface 130a having a convex shape means that the holding surface 130a is curved so that the center of the holding surface 130a protrudes in a direction toward the substrate W (upward in this case), as shown in FIG. 6. In other words, the convex shape of the holding surface 130a indicates a shape in which the center of the holding surface 130a protrudes in a direction toward the substrate W. The holding surface 130a having a concave shape means that the holding surface 130a is curved so that the center of the holding surface 130a is concave in a direction away from the substrate W (downward in this case), as shown in FIG. 7. In other words, the concave shape of the holding surface 130a indicates a shape in which the center of the holding surface 130a is concave in a direction away from the substrate W.

　例えば、駆動機構１７３が移動体１７１をベース１２０に対して相対的に上方向に移動させると、移動体１７１の上端部が固定部材１７２によりチャック１３０の中央に固定されているため、移動体１７１がベース１２０に対して上方向に移動することに伴って、チャック１３０の中央部がベース１２０に対して上方向に押圧される。このため、チャック１３０の外周縁部が固定リング１５０により固定されている状況で、チャック１３０の中央部が上方向に押圧される。よって、チャック１３０は撓むことが可能であるため、チャック１３０が上方向に凸形状になるように変形する。このため、保持面１３０ａが凸形状になる（図６参照）。 For example, when the driving mechanism 173 moves the movable body 171 upward relative to the base 120, the upper end of the movable body 171 is fixed to the center of the chuck 130 by the fixing member 172, and therefore, as the movable body 171 moves upward relative to the base 120, the center of the chuck 130 is pressed upward against the base 120. Therefore, while the outer peripheral edge of the chuck 130 is fixed by the fixing ring 150, the center of the chuck 130 is pressed upward. Therefore, since the chuck 130 is capable of bending, the chuck 130 is deformed to have an upwardly convex shape. As a result, the holding surface 130a becomes convex (see FIG. 6).

　また、例えば、駆動機構１７３が移動体１７１をベース１２０に対して相対的に下方向に移動させると、移動体１７１の上端部が固定部材１７２によりチャック１３０の中央に固定されているため、移動体１７１がベース１２０に対して下方向に移動することに伴って、チャック１３０の中央部がベース１２０に対して下方向に引っ張られる。このため、チャック１３０の外周縁部が固定リング１５０により固定されている状況で、チャック１３０の中央部が下方向に引っ張られる。よって、チャック１３０は撓むこと可能であるため、チャック１３０が下方向に凹形状になるように変形する。このため、保持面１３０ａが凹形状になる（図７参照）。 Also, for example, when the driving mechanism 173 moves the movable body 171 downward relative to the base 120, the upper end of the movable body 171 is fixed to the center of the chuck 130 by the fixing member 172, and therefore, as the movable body 171 moves downward relative to the base 120, the center of the chuck 130 is pulled downward relative to the base 120. Therefore, while the outer peripheral edge of the chuck 130 is fixed by the fixing ring 150, the center of the chuck 130 is pulled downward. Therefore, since the chuck 130 is flexible, the chuck 130 is deformed to become concave downward. As a result, the holding surface 130a becomes concave (see FIG. 7).

　次に、図８を参照して、基板保持装置１００についてさらに説明する。図８は、第１実施形態の基板保持装置１００の構成を示すブロック図である。 Next, the substrate holding device 100 will be further described with reference to FIG. 8. FIG. 8 is a block diagram showing the configuration of the substrate holding device 100 of the first embodiment.

　本実施形態では、基板保持装置１００は、制御装置１９０を有する。制御装置１９０は、基板保持装置１００を制御する。制御装置１９０は、変形機構１７０を制御する。本実施形態では、制御装置１９０は、変形機構１７０、吸引機構３００、ピンアクチュエータ４５０、および、後述する反り検出装置５００を制御する。 In this embodiment, the substrate holding device 100 has a control device 190. The control device 190 controls the substrate holding device 100. The control device 190 controls the deformation mechanism 170. In this embodiment, the control device 190 controls the deformation mechanism 170, the suction mechanism 300, the pin actuator 450, and the warpage detection device 500, which will be described later.

　制御装置１９０は、制御部１９１および記憶部１９３を含む。制御部１９１は、プロセッサを有する。制御部１９１は、例えば、中央処理演算機（Ｃｅｎｔｒａｌ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ：ＣＰＵ）を有する。または、制御部１９１は、汎用演算機を有していてもよい。 The control device 190 includes a control unit 191 and a memory unit 193. The control unit 191 has a processor. The control unit 191 has, for example, a central processing unit (CPU). Alternatively, the control unit 191 may have a general-purpose computer.

　記憶部１９３は、データおよびコンピュータプログラムを記憶する。データは、例えば、基板Ｗを保持するための処理内容および処理手順を規定する。 The memory unit 193 stores data and computer programs. The data specifies, for example, the processing content and processing procedures for holding the substrate W.

　記憶部１９３は、主記憶装置と、補助記憶装置とを含む。主記憶装置は、例えば、半導体メモリである。補助記憶装置は、例えば、半導体メモリおよび／またはハードディスクドライブである。記憶部１９３は、リムーバブルメディアを含んでいてもよい。制御部１９１は、記憶部１９３の記憶しているコンピュータプログラムを実行して、基板保持動作を実行する。 The memory unit 193 includes a main memory device and an auxiliary memory device. The main memory device is, for example, a semiconductor memory. The auxiliary memory device is, for example, a semiconductor memory and/or a hard disk drive. The memory unit 193 may include removable media. The control unit 191 executes a computer program stored in the memory unit 193 to perform the substrate holding operation.

　制御部１９１は、基板Ｗの反り情報を取得する。反り情報は、基板Ｗの少なくとも反り方向を示す。反り情報は、基板Ｗが基板凹形状であるか、基板凸形状であるか、基板平面形状であるかを示す。具体的には、基板凹形状は、基板Ｗの表面Ｗａが裏面Ｗｂ側（ここでは、下方向）に凹み、且つ、裏面Ｗｂが表面Ｗａとは反対側（ここでは、下方向）に突出する形状を示す。つまり、本実施形態では、基板凹形状は、基板Ｗの表面Ｗａ（ここでは、上面）の中央が下方向に凹む形状を示す。また、基板凸形状は、基板Ｗの表面Ｗａが裏面Ｗｂとは反対側（ここでは、上方向）に突出し、且つ、裏面Ｗｂが表面Ｗａ側（ここでは、上方向）に凹む形状を示す。つまり、本実施形態では、基板凸形状は、基板Ｗの表面Ｗａの中央が上方向に突出する形状を示す。基板平面形状は、基板Ｗの表面Ｗａおよび裏面Ｗｂの両方が平面状になっている形状を示す。また、本実施形態では、反り情報は、基板Ｗの反り方向に加え、基板Ｗの反り量を示す。 The control unit 191 acquires warpage information of the substrate W. The warpage information indicates at least the warpage direction of the substrate W. The warpage information indicates whether the substrate W has a concave substrate shape, a convex substrate shape, or a planar substrate shape. Specifically, the concave substrate shape indicates a shape in which the surface Wa of the substrate W is concave toward the back surface Wb side (here, downward), and the back surface Wb protrudes on the opposite side to the surface Wa (here, downward). That is, in this embodiment, the concave substrate shape indicates a shape in which the center of the surface Wa of the substrate W (here, the upper surface) is concave downward. Also, the convex substrate shape indicates a shape in which the surface Wa of the substrate W protrudes on the opposite side to the back surface Wb (here, upward), and the back surface Wb is concave toward the surface Wa side (here, upward). That is, in this embodiment, the convex substrate shape indicates a shape in which the center of the surface Wa of the substrate W protrudes upward. The planar substrate shape indicates a shape in which both the surface Wa and the back surface Wb of the substrate W are flat. Furthermore, in this embodiment, the warpage information indicates the amount of warpage of the substrate W in addition to the warpage direction of the substrate W.

　基板Ｗの反り情報は、例えば、基板Ｗの反りを検出する反り検出装置から制御装置１９０に送信されてもよい。そして、例えば、記憶部１９３は反り情報を記憶し、制御部１９１は記憶部１９３から反り情報を取得してもよい。基板保持装置１００は、反り検出装置を備えてもよい。また、反り検出装置は、基板保持装置１００とは別に設けられていてもよい。なお、本実施形態では、基板保持装置１００は、反り検出装置５００を備える。反り検出装置５００は、基板Ｗに対して接触する接触式の検出装置であってもよいし、基板Ｗに対して接触しない非接触式の検出装置であってもよい。本実施形態では、反り検出装置５００は、例えば、レーザ光出射部と受光部とを有する非接触式の検出装置である。 The warpage information of the substrate W may be transmitted to the control device 190 from, for example, a warpage detection device that detects the warpage of the substrate W. Then, for example, the memory unit 193 may store the warpage information, and the control unit 191 may acquire the warpage information from the memory unit 193. The substrate holding device 100 may be equipped with a warpage detection device. The warpage detection device may also be provided separately from the substrate holding device 100. In this embodiment, the substrate holding device 100 is equipped with a warpage detection device 500. The warpage detection device 500 may be a contact type detection device that comes into contact with the substrate W, or a non-contact type detection device that does not come into contact with the substrate W. In this embodiment, the warpage detection device 500 is, for example, a non-contact type detection device having a laser light emitting unit and a light receiving unit.

　反り検出装置５００は、支持ピン４００により支持されている基板Ｗの反りを検出してもよいし、搬送装置ＴＲにより支持されている基板Ｗの反りを検出してもよい。本実施形態では、反り検出装置５００は、支持ピン４００により支持されている基板Ｗの反りを検出する。反り検出装置５００は、検出した反りに関する反り情報を制御装置１９０に送信し、制御装置１９０は、反り情報を記憶部１９３に記憶する。 The warpage detection device 500 may detect warpage of the substrate W supported by the support pins 400, or may detect warpage of the substrate W supported by the transport device TR. In this embodiment, the warpage detection device 500 detects warpage of the substrate W supported by the support pins 400. The warpage detection device 500 transmits warpage information relating to the detected warpage to the control device 190, and the control device 190 stores the warpage information in the memory unit 193.

　また、制御部１９１は、反り情報に基づいて保持面１３０ａが例えば凸形状または凹形状になるように変形機構１７０によりチャック１３０を変形させ、保持機構１１０により基板Ｗを保持させる。 The control unit 191 also causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has, for example, a convex or concave shape based on the warpage information, and causes the holding mechanism 110 to hold the substrate W.

　具体的には、制御部１９１は、基板Ｗが基板凹形状（表面Ｗａが凹形状）であることを反り情報が示す場合、保持面１３０ａが凹形状になるように変形機構１７０によりチャック１３０を変形させる。そして、制御部１９１は、保持面１３０ａを凹形状にした状態で、保持機構１１０により基板Ｗの裏面Ｗｂ（ここでは、下面）を保持させる。なお、制御部１９１は、変形機構１７０の力を検出したり移動体１７１の移動量を検出したりする検出部（図示せず）からの検出結果に基づいて、変形機構１７０を制御してもよい。 Specifically, when the warpage information indicates that the substrate W has a concave substrate shape (the front surface Wa is concave), the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a concave shape. Then, with the holding surface 130a in a concave state, the control unit 191 causes the holding mechanism 110 to hold the back surface Wb (here, the bottom surface) of the substrate W. Note that the control unit 191 may control the deformation mechanism 170 based on the detection results from a detection unit (not shown) that detects the force of the deformation mechanism 170 and the amount of movement of the moving body 171.

　また、制御部１９１は、基板Ｗの裏面Ｗｂ（ここでは、下面）の中央にチャック１３０の上面である保持面１３０ａの中央を点接触させる。具体的には、制御部１９１は、保持面１３０ａを凸形状または平面状にした状態で、保持面１３０ａを基板Ｗの裏面Ｗｂに接触させる。または、制御部１９１は、保持面１３０ａを凹形状で、且つ、保持面１３０ａの曲率を基板Ｗの曲率よりも小さくした状態で、保持面１３０ａを基板Ｗの裏面Ｗｂに接触させる。 The control unit 191 also brings the center of the holding surface 130a, which is the upper surface of the chuck 130, into point contact with the center of the back surface Wb (here, the bottom surface) of the substrate W. Specifically, the control unit 191 brings the holding surface 130a into contact with the back surface Wb of the substrate W while making the holding surface 130a convex or flat. Alternatively, the control unit 191 brings the holding surface 130a into contact with the back surface Wb of the substrate W while making the holding surface 130a concave and with a curvature of the holding surface 130a smaller than the curvature of the substrate W.

　その後、制御部１９１は、保持面１３０ａが基板Ｗの裏面Ｗｂに密着するように、変形機構１７０によりチャック１３０を変形させる。これにより、基板Ｗの裏面Ｗｂの全面が保持面１３０ａに密着する。このため、保持面１３０ａにより基板Ｗの裏面Ｗｂが保持される。なお、曲率とは、曲面の曲がりの度合いを示す値である。曲率が大きくなると、曲率半径は小さくなる。 Then, the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a comes into close contact with the back surface Wb of the substrate W. As a result, the entire back surface Wb of the substrate W comes into close contact with the holding surface 130a. Therefore, the back surface Wb of the substrate W is held by the holding surface 130a. Note that the curvature is a value that indicates the degree of bending of the curved surface. As the curvature increases, the radius of curvature decreases.

　次に、図９～図１１を参照して、本実施形態の基板保持装置１００による基板保持方法について説明する。図９は、第１実施形態の基板保持装置１００による基板保持方法を示すフローチャートである。図１０は、表面Ｗａが凸形状になっている基板Ｗを基板保持装置１００によって保持する方法を説明するための模式的な断面図である。図１１は、表面Ｗａが凹形状になっている基板Ｗを基板保持装置１００によって保持する方法を説明するための模式的な断面図である。なお、図１０および図１１では、図面簡略化のため、支持ピン４００を省略している。本実施形態では、基板保持装置１００による基板保持方法は、ステップＳ１１～ステップＳ１４を含む。なお、ステップＳ１１は、本発明の「基板を準備する工程」の一例である。ステップＳ１４は、本発明の「基板を保持する工程」の一例である。 Next, a substrate holding method using the substrate holding device 100 of this embodiment will be described with reference to Figures 9 to 11. Figure 9 is a flow chart showing a substrate holding method using the substrate holding device 100 of the first embodiment. Figure 10 is a schematic cross-sectional view for explaining a method for holding a substrate W having a convex surface Wa using the substrate holding device 100. Figure 11 is a schematic cross-sectional view for explaining a method for holding a substrate W having a concave surface Wa using the substrate holding device 100. Note that the support pins 400 are omitted from Figures 10 and 11 to simplify the drawings. In this embodiment, the substrate holding method using the substrate holding device 100 includes steps S11 to S14. Note that step S11 is an example of the "substrate preparation step" of the present invention. Step S14 is an example of the "substrate holding step" of the present invention.

　図９に示すように、ステップＳ１１において、基板Ｗを準備する。具体的には、制御部１９１が搬送装置ＴＲを制御して基板Ｗを準備してもよいし、基板保持装置１００以外の搬送装置等（図示せず）が基板Ｗを準備してもよい。 As shown in FIG. 9, in step S11, the substrate W is prepared. Specifically, the control unit 191 may control the transport device TR to prepare the substrate W, or a transport device (not shown) other than the substrate holding device 100 may prepare the substrate W.

　次に、ステップＳ１２において、制御部１９１は、反り検出装置５００により基板Ｗの反りを検出する。具体的には、搬送装置ＴＲにより基板Ｗが保持面１３０ａの上方に配置されている状態で、制御部１９１は、ピンアクチュエータ４５０により、複数の支持ピン４００を保持面１３０ａから上方に突出させる。これにより、複数の支持ピン４００が基板Ｗの裏面Ｗｂ（ここでは、下面）に接触して基板Ｗを持ち上げ、搬送装置ＴＲから支持ピン４００に基板Ｗが移動する。そして、制御部１９１は、支持ピン４００に支持されている基板Ｗの反りを、反り検出装置５００により検出する。反り検出装置５００の検出結果である反り情報は、記憶部１９３に記憶される。 Next, in step S12, the control unit 191 detects the warpage of the substrate W using the warpage detection device 500. Specifically, while the substrate W is positioned above the holding surface 130a by the transport device TR, the control unit 191 causes the pin actuator 450 to protrude the multiple support pins 400 upward from the holding surface 130a. As a result, the multiple support pins 400 come into contact with the rear surface Wb (here, the lower surface) of the substrate W to lift the substrate W, and the substrate W moves from the transport device TR to the support pins 400. The control unit 191 then detects the warpage of the substrate W supported by the support pins 400 using the warpage detection device 500. The warpage information, which is the detection result of the warpage detection device 500, is stored in the memory unit 193.

　次に、ステップＳ１３において、制御部１９１は、反り情報を取得する。具体的には、制御部１９１は、記憶部１９３から反り情報を取得する。 Next, in step S13, the control unit 191 acquires the warpage information. Specifically, the control unit 191 acquires the warpage information from the storage unit 193.

　次に、ステップＳ１４において、制御部１９１は、変形機構１７０によりチャック１３０を変形させる。具体的には、制御部１９１は、反り情報に基づいて保持面１３０ａが凸形状または凹形状になるように変形機構１７０によりチャック１３０を変形させる。より具体的には、制御部１９１は、変形機構１７０を駆動することにより、移動体１７１をベース１２０に対して相対的に上下方向に移動させることによって、チャック１３０を変形させる。なお、制御部１９１は、反り情報に基づいて、保持面１３０ａが平面状になるように変形機構１７０によりチャック１３０を変形させてもよい。また、ステップＳ１４では、制御部１９１によって吸引機構３００が駆動される。 Next, in step S14, the control unit 191 causes the deformation mechanism 170 to deform the chuck 130. Specifically, the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a convex or concave shape based on the warp information. More specifically, the control unit 191 drives the deformation mechanism 170 to move the moving body 171 in the vertical direction relative to the base 120, thereby deforming the chuck 130. Note that the control unit 191 may also cause the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a flat shape based on the warp information. Also, in step S14, the suction mechanism 300 is driven by the control unit 191.

　例えば、図１０に示すように、基板Ｗが基板凸形状（基板Ｗの表面Ｗａが凸形状）であることを反り情報が示す場合（図１０の上段参照）、制御部１９１は、保持面１３０ａが凸形状になるように変形機構１７０によりチャック１３０を変形させる。つまり、制御部１９１は、移動体１７１をベース１２０に対して相対的に上方向に移動させる。このとき、制御部１９１は、保持面１３０ａの曲率が基板Ｗの曲率よりも大きくなるように、チャック１３０を変形させる。 For example, as shown in FIG. 10, when the warpage information indicates that the substrate W has a convex shape (the surface Wa of the substrate W has a convex shape) (see the upper part of FIG. 10), the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a convex shape. In other words, the control unit 191 moves the moving body 171 upward relative to the base 120. At this time, the control unit 191 deforms the chuck 130 so that the curvature of the holding surface 130a becomes larger than the curvature of the substrate W.

　そして、制御部１９１は、ピンアクチュエータ４５０により支持ピン４００をベース１２０に対して相対的に下方向に移動させ、基板Ｗを保持面１３０ａに接触させる（図１０の中段参照）。これにより、基板Ｗの裏面Ｗｂ（ここでは、下面）の中央にチャック１３０の上面である保持面１３０ａの中央が点接触する。このため、チャック１３０の中心に位置する貫通孔１３０ｂによって、基板Ｗの中央が吸着される。このとき、保持面１３０ａの曲率が基板Ｗの曲率よりも大きいため、支持ピン４００は、突出位置Ｐ１に位置している。 Then, the control unit 191 uses the pin actuator 450 to move the support pin 400 downward relative to the base 120, bringing the substrate W into contact with the holding surface 130a (see the middle part of Figure 10). This brings the center of the holding surface 130a, which is the upper surface of the chuck 130, into point contact with the center of the back surface Wb (here, the lower surface) of the substrate W. As a result, the center of the substrate W is attracted to the through hole 130b located at the center of the chuck 130. At this time, because the curvature of the holding surface 130a is greater than the curvature of the substrate W, the support pin 400 is located at the protruding position P1.

　その後、制御部１９１は、保持面１３０ａの曲率を、基板Ｗの曲率よりも小さく、または、基板Ｗの曲率と同じにする（図１０の下段参照）。具体的には、制御部１９１は、駆動機構１７３により移動体１７１をベース１２０に対して相対的に下方向に移動させるとともに、ピンアクチュエータ４５０により支持ピン４００をベース１２０に対して相対的に下方向に移動させて非突出位置Ｐ２に位置させる。これにより、保持面１３０ａの曲率が基板Ｗの曲率と同じになると、基板Ｗの裏面Ｗｂの全面が保持面１３０ａに吸着される。このとき、基板Ｗの中央から径方向外側に向かって、基板Ｗの裏面Ｗｂ（ここでは、下面）が徐々に保持面１３０ａに接触する。具体的には、チャック１３０の中央の貫通孔１３０ｄが基板Ｗを吸着した後、貫通孔１３０ｄよりも径方向外側の貫通孔１３０ｅおよび貫通孔１３０ｆが基板Ｗを吸着し、その後、チャック１３０の外周部の貫通孔１３０ｆが基板Ｗを吸着する。このため、基板Ｗの裏面Ｗｂと保持面１３０ａとの間に空気が入り込むことを抑制できる。 After that, the control unit 191 makes the curvature of the holding surface 130a smaller than or equal to the curvature of the substrate W (see the lower part of FIG. 10). Specifically, the control unit 191 causes the driving mechanism 173 to move the movable body 171 downward relative to the base 120, and causes the pin actuator 450 to move the support pin 400 downward relative to the base 120 to position it at the non-protruding position P2. As a result, when the curvature of the holding surface 130a becomes the same as the curvature of the substrate W, the entire back surface Wb of the substrate W is adsorbed to the holding surface 130a. At this time, the back surface Wb (here, the lower surface) of the substrate W gradually comes into contact with the holding surface 130a from the center of the substrate W toward the radially outward side. Specifically, after the central through hole 130d of the chuck 130 adsorbs the substrate W, the through holes 130e and 130f radially outward of the through hole 130d adsorb the substrate W, and then the through hole 130f on the outer periphery of the chuck 130 adsorbs the substrate W. This makes it possible to prevent air from entering between the back surface Wb of the substrate W and the holding surface 130a.

　そして、制御部１９１は、移動体１７１および支持ピン４００の下方向への移動を停止する。このようにして、基板Ｗが基板保持装置１００によって保持される。 Then, the control unit 191 stops the downward movement of the moving body 171 and the support pins 400. In this way, the substrate W is held by the substrate holding device 100.

　また、例えば、図１１に示すように、基板Ｗが基板凹形状（基板Ｗの表面Ｗａが凹形状）であることを反り情報が示す場合（図１１の上段参照）、制御部１９１は、保持面１３０ａが凸形状になるように変形機構１７０によりチャック１３０を変形させる。つまり、制御部１９１は、駆動機構１７３により移動体１７１をベース１２０に対して相対的に上方向に移動させる。また、基板Ｗが基板凹形状であることを反り情報が示す場合、制御部１９１は、保持面１３０ａが平面状になるように変形機構１７０によりチャック１３０を変形させてもよい。また、基板Ｗが基板凹形状であることを反り情報が示す場合、制御部１９１は、保持面１３０ａが凹形状になるように変形機構１７０によりチャック１３０を変形させてもよい。ただし、保持面１３０ａが凹形状になるようにチャック１３０を変形させる場合、制御部１９１は、保持面１３０ａの曲率が基板Ｗの曲率よりも小さくなるように、チャック１３０を変形させる。 11, for example, when the warpage information indicates that the substrate W has a concave substrate shape (the surface Wa of the substrate W has a concave substrate shape) (see the upper part of FIG. 11), the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a convex shape. That is, the control unit 191 causes the drive mechanism 173 to move the movable body 171 upward relative to the base 120. When the warpage information indicates that the substrate W has a concave substrate shape, the control unit 191 may cause the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a flat shape. When the warpage information indicates that the substrate W has a concave substrate shape, the control unit 191 may cause the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a concave shape. However, when deforming the chuck 130 so that the holding surface 130a has a concave shape, the control unit 191 deforms the chuck 130 so that the curvature of the holding surface 130a is smaller than the curvature of the substrate W.

　そして、制御部１９１は、ピンアクチュエータ４５０により支持ピン４００をベース１２０に対して相対的に下方向に移動させ、基板Ｗを保持面１３０ａに接触させる（図１１の中段参照）。これにより、基板Ｗの裏面Ｗｂ（ここでは、下面）の中央にチャック１３０の上面である保持面１３０ａの中央が点接触する。このため、チャック１３０の中心に位置する貫通孔１３０ｂによって、基板Ｗの中央が吸着される。このとき、支持ピン４００は、突出位置Ｐ１に位置している。 Then, the control unit 191 uses the pin actuator 450 to move the support pin 400 downward relative to the base 120, bringing the substrate W into contact with the holding surface 130a (see the middle part of Figure 11). This brings the center of the holding surface 130a, which is the upper surface of the chuck 130, into point contact with the center of the back surface Wb (here, the lower surface) of the substrate W. As a result, the center of the substrate W is adsorbed by the through hole 130b located at the center of the chuck 130. At this time, the support pin 400 is located at the protruding position P1.

　その後、制御部１９１は、保持面１３０ａを凹形状で、且つ、保持面１３０ａの曲率を基板Ｗの曲率よりも大きく、または、基板Ｗの曲率と同じにする（図１１の下段参照）。具体的には、制御部１９１は、駆動機構１７３により移動体１７１をベース１２０に対して相対的に下方向に移動させるとともに、ピンアクチュエータ４５０により支持ピン４００をベース１２０に対して相対的に下方向に移動させて非突出位置Ｐ２に位置させる。これにより、保持面１３０ａの曲率が基板Ｗの曲率と同じになると、基板Ｗの裏面Ｗｂの全面が保持面１３０ａに吸着される。このとき、基板Ｗの中央から径方向外側に向かって、基板Ｗの裏面Ｗｂ（ここでは、下面）が徐々に保持面１３０ａに接触する。具体的には、チャック１３０の中央の貫通孔１３０ｄが基板Ｗを吸着した後、貫通孔１３０ｄよりも径方向外側の貫通孔１３０ｅおよび貫通孔１３０ｆが基板Ｗを吸着し、その後、チャック１３０の外周部の貫通孔１３０ｆが基板Ｗを吸着する。このため、基板Ｗの裏面Ｗｂと保持面１３０ａとの間に空気が入り込むことを抑制できる。 After that, the control unit 191 makes the holding surface 130a concave and sets the curvature of the holding surface 130a to be greater than or equal to the curvature of the substrate W (see the lower part of FIG. 11). Specifically, the control unit 191 causes the driving mechanism 173 to move the movable body 171 downward relative to the base 120, and causes the pin actuator 450 to move the support pin 400 downward relative to the base 120 to position it at the non-protruding position P2. As a result, when the curvature of the holding surface 130a becomes the same as the curvature of the substrate W, the entire back surface Wb of the substrate W is adsorbed to the holding surface 130a. At this time, the back surface Wb (here, the lower surface) of the substrate W gradually comes into contact with the holding surface 130a from the center of the substrate W toward the radially outward side. Specifically, after the central through hole 130d of the chuck 130 adsorbs the substrate W, the through holes 130e and 130f radially outward of the through hole 130d adsorb the substrate W, and then the through hole 130f on the outer periphery of the chuck 130 adsorbs the substrate W. This makes it possible to prevent air from entering between the back surface Wb of the substrate W and the holding surface 130a.

　そして、制御部１９１は、移動体１７１および支持ピン４００の下方向への移動を停止する。このようにして、基板Ｗが基板保持装置１００によって保持される。 Then, the control unit 191 stops the downward movement of the moving body 171 and the support pins 400. In this way, the substrate W is held by the substrate holding device 100.

　なお、基板Ｗが基板平面形状（基板Ｗの表面Ｗａが平面状）であることを反り情報が示す場合は、制御部１９１は、基板Ｗが基板凸形状（基板Ｗの表面Ｗａが凸形状）であることを反り情報が示す場合（図１０参照）と同様に、処理を実行する。 Note that when the warpage information indicates that the substrate W has a planar substrate shape (the surface Wa of the substrate W is planar), the control unit 191 executes processing in the same manner as when the warpage information indicates that the substrate W has a convex substrate shape (the surface Wa of the substrate W is convex) (see FIG. 10).

　以上、図１～図１１を参照して説明したように、本実施形態では、変形機構１７０は、保持面１３０ａが凸形状になるようにチャック１３０を変形させるとともに、保持面１３０ａが凹形状になるようにチャック１３０を変形させる。従って、基板Ｗの反りに応じて保持面１３０ａが凸形状または凹形状になるように、チャック１３０を変形させることができる。よって、基板Ｗにかかる応力が大きくなることを抑制できる。また、本実施形態のように素子が形成された基板Ｗを用いる場合、基板Ｗにかかる応力が大きくなることを抑制することによって、素子の特性に悪影響を及ぼすことを抑制できる。よって、素子が形成された基板Ｗを用いる場合に、本発明を適用することは、特に有効である。 As described above with reference to Figures 1 to 11, in this embodiment, the deformation mechanism 170 deforms the chuck 130 so that the holding surface 130a has a convex shape, and also deforms the chuck 130 so that the holding surface 130a has a concave shape. Therefore, the chuck 130 can be deformed so that the holding surface 130a has a convex or concave shape depending on the warp of the substrate W. This makes it possible to prevent the stress applied to the substrate W from increasing. Furthermore, when a substrate W on which elements are formed is used as in this embodiment, the stress applied to the substrate W can be prevented from increasing, thereby preventing adverse effects on the characteristics of the elements. Therefore, it is particularly effective to apply the present invention when a substrate W on which elements are formed is used.

　また、上記のように、制御部１９１は、少なくとも反り方向を示す反り情報に基づいて、保持面１３０ａが凸形状または凹形状になるように変形機構１７０によりチャック１３０を変形させ、保持機構１１０により基板Ｗを保持させる。従って、基板Ｗにかかる応力が大きくなることを、容易に抑制できる。 Furthermore, as described above, the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a convex or concave shape based on the warpage information indicating at least the warpage direction, and causes the holding mechanism 110 to hold the substrate W. Therefore, it is possible to easily prevent the stress applied to the substrate W from increasing.

　また、上記のように、基板Ｗが基板凹形状（表面Ｗａが凹形状）であることを反り情報が示す場合、制御部１９１は、保持面１３０ａが凹形状になるように変形機構１７０によりチャック１３０を変形させ、保持機構１１０により基板Ｗを保持させる。従って、基板Ｗが基板凹形状になっている場合に、基板Ｗにかかる応力が大きくなることを容易に抑制できる。 Furthermore, as described above, when the warpage information indicates that the substrate W has a concave substrate shape (the surface Wa has a concave substrate shape), the control unit 191 causes the deformation mechanism 170 to deform the chuck 130 so that the holding surface 130a has a concave substrate shape, and causes the holding mechanism 110 to hold the substrate W. Therefore, when the substrate W has a concave substrate shape, it is possible to easily prevent the stress acting on the substrate W from becoming large.

　また、上記のように、基板Ｗが基板凹形状（表面Ｗａが凹形状）であることを反り情報が示す場合において、制御部１９１は、基板Ｗの裏面Ｗｂ（ここでは、下面）の中央にチャック１３０の上面である保持面１３０ａの中央を点接触させた後、変形機構１７０により保持面１３０ａの曲率を基板Ｗの曲率よりも大きくする。従って、基板Ｗの中央から径方向外側に向かって、基板Ｗの裏面Ｗｂが徐々に保持面１３０ａに接触する。よって、基板Ｗの裏面Ｗｂと保持面１３０ａとの間に空気が入り込むことを抑制できる。このため、基板Ｗの裏面Ｗｂの全面を容易に保持面１３０ａに密着させることができる。言い換えると、基板Ｗの裏面Ｗｂと保持面１３０ａとの間にボイドが生じることを抑制できる。 Also, as described above, when the warpage information indicates that the substrate W has a concave shape (the surface Wa is concave), the control unit 191 brings the center of the holding surface 130a, which is the upper surface of the chuck 130, into point contact with the center of the back surface Wb (here, the lower surface) of the substrate W, and then uses the deformation mechanism 170 to make the curvature of the holding surface 130a larger than the curvature of the substrate W. Therefore, the back surface Wb of the substrate W gradually comes into contact with the holding surface 130a from the center of the substrate W toward the radially outer side. This makes it possible to prevent air from entering between the back surface Wb of the substrate W and the holding surface 130a. Therefore, the entire back surface Wb of the substrate W can be easily brought into close contact with the holding surface 130a. In other words, it is possible to prevent voids from being generated between the back surface Wb of the substrate W and the holding surface 130a.

　また、上記のように、変形機構１７０は、チャック１３０の中央に固定された移動体１７１を有し、移動体１７１がチャック１３０とベース１２０とが対向する対向方向に沿って、ベース１２０に対して移動する。これにより、保持面１３０ａが凸形状または凹形状になるように、チャック１３０を容易に変形させることができる。 As described above, the deformation mechanism 170 has a moving body 171 fixed to the center of the chuck 130, and the moving body 171 moves relative to the base 120 along the opposing direction in which the chuck 130 and the base 120 face each other. This makes it possible to easily deform the chuck 130 so that the holding surface 130a has a convex or concave shape.

　また、上記のように、移動体１７１は、保持面１３０ａに繋がる貫通孔１７１ａを有するパイプを含み、貫通孔１７１ａは、基板Ｗの裏面Ｗｂ（ここでは、下面）を吸引する吸引孔である。従って、移動体１７１をチャック１３０の中央に固定しながら、基板Ｗの中央を容易に吸着できる。 As described above, the movable body 171 includes a pipe having a through hole 171a that is connected to the holding surface 130a, and the through hole 171a is a suction hole that sucks in the back surface Wb (here, the lower surface) of the substrate W. Therefore, the center of the substrate W can be easily adsorbed while the movable body 171 is fixed to the center of the chuck 130.

　また、上記のように、保持面１３０ａを平面状にした状態で、仕切り壁１６０の一部は、挿入溝１２０ｃに挿入されており、挿入溝１２０ｃは、仕切り壁１６０が挿入溝１２０ｃの内部にさらに挿入可能な領域Ｓ１２０を有する。従って、仕切り壁１６０を挿入溝１２０ｃの内部にさらに挿入することによって、保持面１３０ａを容易に凹形状にすることができる。 Furthermore, as described above, with the holding surface 130a in a planar state, a portion of the partition wall 160 is inserted into the insertion groove 120c, and the insertion groove 120c has an area S120 into which the partition wall 160 can be further inserted. Therefore, by further inserting the partition wall 160 into the insertion groove 120c, the holding surface 130a can be easily made into a concave shape.

（第２実施形態）
　図１２～図２３を参照して、本発明の第２実施形態による貼り合わせ装置１について説明する。図１２は、第２実施形態による貼り合わせ装置１を模式的に示す側面図である。ただし、図１２では、図面が複雑になることを抑制するために、基板保持装置１００の支持ピン４００を上記第１実施形態の図１と同様に２つだけ描いているとともに、第２基板保持装置２００の第２支持ピン４１０を図１４に合わせて２つだけ描いている。 Second Embodiment
A bonding apparatus 1 according to a second embodiment of the present invention will be described with reference to Fig. 12 to Fig. 23. Fig. 12 is a side view showing a schematic diagram of the bonding apparatus 1 according to the second embodiment. However, in Fig. 12, in order to prevent the drawing from becoming complicated, only two support pins 400 of the substrate holding device 100 are drawn in the same manner as Fig. 1 of the first embodiment, and only two second support pins 410 of the second substrate holding device 200 are drawn in accordance with Fig. 14.

　図１２に示すように、第２実施形態による貼り合わせ装置１は、基板保持装置１００（以下、第１基板保持装置１００と記載する）と、第１基板保持装置１００に対向して配置される第２基板保持装置２００とを備える。なお、第２実施形態では、理解を容易にするために、第１実施形態の基板保持装置１００を第１基板保持装置１００として説明する。 As shown in FIG. 12, the bonding apparatus 1 according to the second embodiment includes a substrate holding device 100 (hereinafter referred to as the first substrate holding device 100) and a second substrate holding device 200 arranged opposite the first substrate holding device 100. Note that in the second embodiment, for ease of understanding, the substrate holding device 100 of the first embodiment will be described as the first substrate holding device 100.

　また、以下の説明では、理解を容易にするために、第１実施形態の基板Ｗ、保持機構１１０、ベース１２０、チャック１３０、保持面１３０ａ、変形機構１７０、移動体１７１および支持ピン４００をそれぞれ、第１基板Ｗ１、第１保持機構１１０、第１ベース１２０、第１チャック１３０、第１保持面１３０ａ、第１変形機構１７０、第１移動体１７１および第１支持ピン４００と記載する。 Furthermore, in the following description, for ease of understanding, the substrate W, holding mechanism 110, base 120, chuck 130, holding surface 130a, deformation mechanism 170, moving body 171 and support pin 400 of the first embodiment will be referred to as first substrate W1, first holding mechanism 110, first base 120, first chuck 130, first holding surface 130a, first deformation mechanism 170, first moving body 171 and first support pin 400, respectively.

　本実施形態では、第１基板保持装置１００は、吸引機構３００および制御装置１９０を備えず、貼り合わせ装置１が吸引機構３００および制御装置１９０を備える。なお、第１基板保持装置１００のその他の構成は、第１実施形態の基板保持装置１００の構成と同様である。 In this embodiment, the first substrate holding device 100 does not include a suction mechanism 300 and a control device 190, and the bonding device 1 includes a suction mechanism 300 and a control device 190. The other configurations of the first substrate holding device 100 are the same as those of the substrate holding device 100 of the first embodiment.

　貼り合わせ装置１は、第１基板保持装置１００が保持する第１基板Ｗ１と第２基板保持装置２００が保持する第２基板Ｗ２とを貼り合わせる。貼り合わせ装置１は、支持フレームＳＦと、第１基板保持装置１００と、第２基板保持装置２００と、第１移動機構６１０と、第２移動機構６２０とを備える。 The bonding apparatus 1 bonds a first substrate W1 held by a first substrate holding device 100 and a second substrate W2 held by a second substrate holding device 200. The bonding apparatus 1 includes a support frame SF, a first substrate holding device 100, a second substrate holding device 200, a first moving mechanism 610, and a second moving mechanism 620.

　支持フレームＳＦは、貼り合わせ装置１が設置される床ＦＬに固定されている。支持フレームＳＦは、例えば、金属製である。支持フレームＳＦは、例えば、上下方向に延びる複数の第１フレームＳＦ１と、水平方向に延びる複数の第２フレームＳＦ２とを有する。本実施形態では、第１フレームＳＦ１は、４つ設けられており、第２フレームＳＦ２は、４つ設けられている。４つの第１フレームＳＦ１は、Ｘ方向に互いに所定間隔をおいて配置される２つの第１フレームＳＦ１からなる第１フレームＳＦ１セット（図示しない）を２組有している。これら２組の第１フレームＳＦ１セットは、Ｘ方向について互いに重なり、Ｙ方向に互いに所定間隔をおいて配置されている。つまり、４つの第１フレームＳＦ１は、平面視において、矩形の４つの角に相当する位置に配置されている。各第１フレームＳＦ１の下端部は、床ＦＬに固定されている。４つの第２フレームＳＦ２は、Ｘ方向に隣接する第１フレームＳＦ１の上端部同士を接続する２つの第２フレームＳＦ２と、Ｙ方向に隣接する第１フレームＳＦ１の上端部同士を接続する２つの第２フレームＳＦ２とを有する。つまり、４つの第２フレームＳＦ２は、平面視において、矩形の４つの辺に相当する位置に配置されている。なお、支持フレームＳＦは、貼り合わせ装置１が設置される室内の壁または天井に固定されていてもよい。 The support frame SF is fixed to the floor FL on which the bonding device 1 is installed. The support frame SF is made of, for example, metal. The support frame SF has, for example, a plurality of first frames SF1 extending in the vertical direction and a plurality of second frames SF2 extending in the horizontal direction. In this embodiment, four first frames SF1 are provided, and four second frames SF2 are provided. The four first frames SF1 include two first frame SF1 sets (not shown) consisting of two first frames SF1 arranged at a predetermined interval from each other in the X direction. These two first frame SF1 sets overlap each other in the X direction and are arranged at a predetermined interval from each other in the Y direction. In other words, the four first frames SF1 are arranged at positions corresponding to the four corners of a rectangle in a plan view. The lower end of each first frame SF1 is fixed to the floor FL. The four second frames SF2 include two second frames SF2 that connect the upper ends of the first frames SF1 adjacent in the X direction, and two second frames SF2 that connect the upper ends of the first frames SF1 adjacent in the Y direction. In other words, the four second frames SF2 are arranged at positions that correspond to the four sides of a rectangle in a plan view. The support frame SF may be fixed to a wall or ceiling in a room in which the bonding apparatus 1 is installed.

　また、支持フレームＳＦは、第２基板保持装置２００を支持する。本実施形態では、支持フレームＳＦは、第２基板保持装置２００を水平方向に案内する水平レールＳＦ３と、第２基板保持装置２００を上下方向に案内する鉛直レールＳＦ４とを有する。水平レールＳＦ３および鉛直レールＳＦ４は、例えば、２つずつ設けられている。水平レールＳＦ３は、例えば、Ｘ方向に延びる。２つの水平レールＳＦ３は、Ｘ方向に延びる２つの第２フレームＳＦ２にそれぞれ固定されている。２つの鉛直レールＳＦ４は、２つの水平レールＳＦ３にそれぞれ取り付けられている。鉛直レールＳＦ４は、水平レールＳＦ３に沿ってＸ方向に移動可能に構成されている。 The support frame SF also supports the second substrate holding device 200. In this embodiment, the support frame SF has a horizontal rail SF3 that guides the second substrate holding device 200 in the horizontal direction, and a vertical rail SF4 that guides the second substrate holding device 200 in the up-down direction. For example, two horizontal rails SF3 and two vertical rails SF4 are provided. The horizontal rail SF3 extends, for example, in the X direction. The two horizontal rails SF3 are fixed to two second frames SF2 extending in the X direction, respectively. The two vertical rails SF4 are attached to two horizontal rails SF3, respectively. The vertical rail SF4 is configured to be movable in the X direction along the horizontal rail SF3.

　本実施形態では、第２基板保持装置２００は、第１基板保持装置１００に対して相対的に移動可能に構成されている。具体的には、第２基板保持装置２００は、第２支持台ＳＢ２を備える。第２支持台ＳＢ２は、鉛直レールＳＦ４に支持されており、鉛直レールＳＦ４と共に水平レールＳＦ３に沿って水平方向に移動する。また、第２支持台ＳＢ２は、鉛直レールＳＦ４に沿って上下方向に移動する。 In this embodiment, the second substrate holding device 200 is configured to be movable relative to the first substrate holding device 100. Specifically, the second substrate holding device 200 includes a second support stand SB2. The second support stand SB2 is supported by a vertical rail SF4, and moves horizontally along the horizontal rail SF3 together with the vertical rail SF4. The second support stand SB2 also moves up and down along the vertical rail SF4.

　本実施形態では、第２基板保持装置２００は、第１基板保持装置１００の上方に配置されている。第２基板保持装置２００は、第１基板保持装置１００を上下方向に反転したように設けられている。なお、第１基板保持装置１００および第２基板保持装置２００が上下方向に反転して配置されていてもよい。第２基板保持装置２００の構成については、後述する。 In this embodiment, the second substrate holding device 200 is disposed above the first substrate holding device 100. The second substrate holding device 200 is disposed so that the first substrate holding device 100 is inverted in the vertical direction. Note that the first substrate holding device 100 and the second substrate holding device 200 may also be disposed so that they are inverted in the vertical direction. The configuration of the second substrate holding device 200 will be described later.

　第１移動機構６１０は、例えば、水平レールＳＦ３に固定されている。なお、第１移動機構６１０は、第２フレームＳＦ２に固定されていてもよい。第１移動機構６１０は、第２基板保持装置２００を水平方向に移動させる。本実施形態では、第１移動機構６１０は、鉛直レールＳＦ４と共に第２基板保持装置２００を水平方向に移動させる。第１移動機構６１０は、アクチュエータを有する。第１移動機構６１０は、特に限定されるものではないが、例えば、ポンプまたはモータ等の駆動源と、駆動源の駆動力を鉛直レールＳＦ４または第２支持台ＳＢ２に伝達するギア等の伝達部材とを有する。なお、第１移動機構６１０は、第１基板保持装置１００を移動させてもよいし、第１基板保持装置１００および第２基板保持装置２００の両方を移動させてもよい。 The first moving mechanism 610 is fixed to, for example, the horizontal rail SF3. The first moving mechanism 610 may be fixed to the second frame SF2. The first moving mechanism 610 moves the second substrate holding device 200 in the horizontal direction. In this embodiment, the first moving mechanism 610 moves the second substrate holding device 200 in the horizontal direction together with the vertical rail SF4. The first moving mechanism 610 has an actuator. The first moving mechanism 610 is not particularly limited, but has, for example, a driving source such as a pump or a motor, and a transmission member such as a gear that transmits the driving force of the driving source to the vertical rail SF4 or the second support base SB2. The first moving mechanism 610 may move the first substrate holding device 100, or may move both the first substrate holding device 100 and the second substrate holding device 200.

　第２移動機構６２０は、例えば、鉛直レールＳＦ４に固定されている。第２移動機構６２０は、第２基板保持装置２００を上下方向に移動させる。第２移動機構６２０は、アクチュエータを有する。第２移動機構６２０は、特に限定されるものではないが、例えば、ポンプまたはモータ等の駆動源と、駆動源の駆動力を第２支持台ＳＢ２に伝達するギア等の伝達部材とを有する。なお、第２移動機構６２０は、第１基板保持装置１００を移動させてもよいし、第１基板保持装置１００および第２基板保持装置２００の両方を移動させてもよい。 The second moving mechanism 620 is fixed to, for example, a vertical rail SF4. The second moving mechanism 620 moves the second substrate holding device 200 in the vertical direction. The second moving mechanism 620 has an actuator. The second moving mechanism 620 is not particularly limited, but has, for example, a drive source such as a pump or a motor, and a transmission member such as a gear that transmits the drive force of the drive source to the second support base SB2. The second moving mechanism 620 may move the first substrate holding device 100, or may move both the first substrate holding device 100 and the second substrate holding device 200.

　引き続き図１２を参照して、第２基板保持装置２００について説明する。第２基板保持装置２００は、第２支持台ＳＢ２に加え、第２保持機構２１０と、第２変形機構２７０と、複数の第２支持ピン４１０と、第２ピンアクチュエータ４６０とを備える。 Continuing to refer to FIG. 12, the second substrate holding device 200 will be described. In addition to the second support stand SB2, the second substrate holding device 200 includes a second holding mechanism 210, a second deformation mechanism 270, a plurality of second support pins 410, and a second pin actuator 460.

　第２支持台ＳＢ２は、上述したように、上下方向および水平方向に移動するように構成されている。また、第２支持台ＳＢ２は、第２保持機構２１０の重さおよび熱によって変形しにくい材料によって形成されている。第２支持台ＳＢ２は、例えば、石材または金属フレームによって形成されている。第２支持台ＳＢ２の外形は、例えば、略直方体形状を有する。第２支持台ＳＢ２には、上下方向に貫通する略直方体形状の貫通孔ＳＢａが形成されている。つまり、第２支持台ＳＢ２は、上下方向に延びる矩形の環状に形成されている。 As described above, the second support stand SB2 is configured to move in the vertical and horizontal directions. Furthermore, the second support stand SB2 is formed from a material that is not easily deformed by the weight and heat of the second holding mechanism 210. The second support stand SB2 is formed, for example, from a stone material or a metal frame. The outer shape of the second support stand SB2 has, for example, a substantially rectangular parallelepiped shape. The second support stand SB2 has a through hole SBa that is substantially rectangular parallelepiped shaped and penetrates in the vertical direction. In other words, the second support stand SB2 is formed in the shape of a rectangular ring extending in the vertical direction.

　本実施形態では、第２支持台ＳＢ２は、第２保持機構２１０複数の第２支持ピン４１０を支持する。第２支持台ＳＢ２は、第２保持機構２１０を上方から支持する。第２支持台ＳＢ２には、第２保持機構２１０の外周部がボルト等の固定具（図示せず）によって固定されている。 In this embodiment, the second support base SB2 supports the second holding mechanism 210 and the multiple second support pins 410. The second support base SB2 supports the second holding mechanism 210 from above. The outer periphery of the second holding mechanism 210 is fixed to the second support base SB2 by fasteners such as bolts (not shown).

　第２保持機構２１０は、第２基板Ｗ２を吸着して保持する。第２保持機構２１０は、第２基板Ｗ２を略水平に保持する。 The second holding mechanism 210 holds the second substrate W2 by suction. The second holding mechanism 210 holds the second substrate W2 approximately horizontally.

　本実施形態では、第２保持機構２１０は、第２基板Ｗ２を上方から保持する。また、第２保持機構２１０は、第２基板Ｗ２の裏面Ｗｂを吸着して保持する。このため、第２基板Ｗ２が第２保持機構２１０に保持された状態で、第２基板Ｗ２の裏面Ｗｂが上面となり、第２基板Ｗ２の表面Ｗａが下面となる。第２基板Ｗ２が第２保持機構２１０に保持されていない状態においては、言うまでもなく、第２基板Ｗ２を上下反転させることが可能であるが、本実施形態では、理解を容易にするために、特に説明する場合を除き、第２基板Ｗ２を上下反転させないこととする。つまり、本実施形態では、第２基板Ｗ２が第２保持機構２１０に保持されているか否かにかかわらず、第２基板Ｗ２の表面Ｗａは下面であり、第２基板Ｗ２の裏面Ｗｂは上面であるとする。 In this embodiment, the second holding mechanism 210 holds the second substrate W2 from above. The second holding mechanism 210 also holds the back surface Wb of the second substrate W2 by suction. Therefore, when the second substrate W2 is held by the second holding mechanism 210, the back surface Wb of the second substrate W2 is the upper surface, and the front surface Wa of the second substrate W2 is the lower surface. When the second substrate W2 is not held by the second holding mechanism 210, it goes without saying that the second substrate W2 can be turned upside down. However, in this embodiment, in order to facilitate understanding, the second substrate W2 is not turned upside down unless otherwise specified. In other words, in this embodiment, regardless of whether the second substrate W2 is held by the second holding mechanism 210 or not, the front surface Wa of the second substrate W2 is the lower surface, and the back surface Wb of the second substrate W2 is the upper surface.

　第２変形機構２７０の一部は、ボルト等の固定具（図示せず）を用いて、例えば、第２保持機構２１０の上部に取り付けられている。具体的には、第２変形機構２７０は、後述するように、第２移動体２７１および駆動機構２７３を有する。駆動機構２７３は、ボルト等の固定具（図示せず）を用いて、第２保持機構２１０の上部に取り付けられている。第２変形機構２７０は、第２保持機構２１０の一部を変形させる機能を有する。なお、駆動機構２７３は、第２支持台ＳＢ２に取り付けられていてもよい。第２変形機構２７０の構成については、後述する。 A portion of the second deformation mechanism 270 is attached, for example, to the upper portion of the second holding mechanism 210 using a fastener such as a bolt (not shown). Specifically, the second deformation mechanism 270 has a second moving body 271 and a driving mechanism 273, as described below. The driving mechanism 273 is attached to the upper portion of the second holding mechanism 210 using a fastener such as a bolt (not shown). The second deformation mechanism 270 has a function of deforming a portion of the second holding mechanism 210. The driving mechanism 273 may be attached to the second support base SB2. The configuration of the second deformation mechanism 270 will be described below.

　吸引機構３００の一部は、ボルト等の固定具（図示せず）を用いて、例えば、支持フレームＳＦの第１フレームＳＦ１に取り付けられている。吸引機構３００は、第１基板Ｗ１および第２基板Ｗ２を第１保持機構１１０および第２保持機構２１０にそれぞれ吸着させるための装置であり、空気を吸引する。なお、吸引機構３００の一部は、第１支持台ＳＢ１または第２支持台ＳＢ２に取り付けられていてもよいし、支持フレームＳＦの第２フレームＳＦ２に取り付けられていてもよいし、貼り合わせ装置１が設置される床ＦＬに載置されていてもよい。吸引機構３００の構成、および、吸引機構３００による吸引方法については、後述する。 A part of the suction mechanism 300 is attached, for example, to the first frame SF1 of the support frame SF using fasteners such as bolts (not shown). The suction mechanism 300 is a device for adsorbing the first substrate W1 and the second substrate W2 to the first holding mechanism 110 and the second holding mechanism 210, respectively, and sucks in air. Note that a part of the suction mechanism 300 may be attached to the first support stand SB1 or the second support stand SB2, or may be attached to the second frame SF2 of the support frame SF, or may be placed on the floor FL on which the bonding apparatus 1 is installed. The configuration of the suction mechanism 300 and the suction method using the suction mechanism 300 will be described later.

　複数の第２支持ピン４１０は、第２保持機構２１０を上下方向に貫通するように配置されているとともに、第２保持機構２１０に対して上下方向に移動可能に設けられている。複数の第２支持ピン４１０は、第２保持機構２１０に保持される前の第２基板Ｗ２を支持する。複数の第２支持ピン４１０は、第２基板Ｗ２の裏面Ｗｂを吸着して支持する。複数の第２支持ピン４１０は、第２基板Ｗ２を上方から支持する。複数の第２支持ピン４１０は、搬送装置ＴＲの搬送アームＴＡから第２基板Ｗ２を受け取る。 The multiple second support pins 410 are arranged to penetrate the second holding mechanism 210 in the vertical direction, and are provided so as to be movable in the vertical direction relative to the second holding mechanism 210. The multiple second support pins 410 support the second substrate W2 before it is held by the second holding mechanism 210. The multiple second support pins 410 support the back surface Wb of the second substrate W2 by suction. The multiple second support pins 410 support the second substrate W2 from above. The multiple second support pins 410 receive the second substrate W2 from the transport arm TA of the transport device TR.

　また、複数の第２支持ピン４１０は、搬送装置ＴＲから受け取った第２基板Ｗ２を第２保持機構２１０に渡す。複数の第２支持ピン４１０の構成については、後述する。 The second support pins 410 also transfer the second substrate W2 received from the transport device TR to the second holding mechanism 210. The configuration of the second support pins 410 will be described later.

　第２ピンアクチュエータ４６０は、ボルト等の固定具（図示せず）を用いて、例えば、第２保持機構２１０の上部に取り付けられている。第２ピンアクチュエータ４６０を駆動させることで、複数の第２支持ピン４１０を上下移動させる。第２ピンアクチュエータ４６０を駆動させることで複数の第２支持ピン４１０を上下移動させ、複数の第２支持ピン４１０が、搬送装置ＴＲから第２基板Ｗ２を受け取ったり、第２保持機構２１０に第２基板Ｗ２を渡したりすることが可能である。なお、第２ピンアクチュエータ４６０は、第２支持台ＳＢ２に取り付けられていてもよい。第２ピンアクチュエータ４６０の構成については、後述する。 The second pin actuator 460 is attached, for example, to the top of the second holding mechanism 210 using a fastener (not shown) such as a bolt. Driving the second pin actuator 460 moves the multiple second support pins 410 up and down. Driving the second pin actuator 460 moves the multiple second support pins 410 up and down, and the multiple second support pins 410 can receive the second substrate W2 from the transport device TR or pass the second substrate W2 to the second holding mechanism 210. The second pin actuator 460 may be attached to the second support base SB2. The configuration of the second pin actuator 460 will be described later.

　次に、図１３を参照して、第１基板保持装置１００および第２基板保持装置２００についてさらに説明する。図１３は、第２実施形態の貼り合わせ装置１の第１基板保持装置１００および第２基板保持装置２００を模式的に示す断面図である。図１３に示すように、第２基板保持装置２００は、第１基板保持装置１００と同様に構成されている。なお、第２基板保持装置２００は、第１基板保持装置１００を上下方向に反転したように設けられている。以下、具体的に説明する。 Next, the first substrate holding device 100 and the second substrate holding device 200 will be further described with reference to FIG. 13. FIG. 13 is a cross-sectional view that shows a schematic diagram of the first substrate holding device 100 and the second substrate holding device 200 of the bonding apparatus 1 of the second embodiment. As shown in FIG. 13, the second substrate holding device 200 is configured in the same manner as the first substrate holding device 100. Note that the second substrate holding device 200 is provided by inverting the first substrate holding device 100 in the up-down direction. A detailed description will be given below.

　第２保持機構２１０は、第２基板Ｗ２を吸着して保持する。第２保持機構２１０は、第２基板Ｗ２を略水平に保持する。第２基板Ｗ２は、第１基板Ｗ１と同様に構成されている。ただし、第２基板Ｗ２は、表面Ｗａが下方向を向き、裏面Ｗｂが上方向を向いた状態で、第２基板保持装置２００によって保持される。 The second holding mechanism 210 adsorbs and holds the second substrate W2. The second holding mechanism 210 holds the second substrate W2 approximately horizontally. The second substrate W2 is configured similarly to the first substrate W1. However, the second substrate W2 is held by the second substrate holding device 200 with its front surface Wa facing downward and its back surface Wb facing upward.

　第２保持機構２１０は、第２ベース２２０と、第２チャック２３０と、支持壁１４０と、固定リング１５０と、仕切り壁１６０とを有する。第２ベース２２０は、平面視で略円形状を有する。第２ベース２２０は、例えば、プレートである。第２ベース２２０は、下面２２０ａおよび上面２２０ｂを有する。また、第２ベース２２０は、第１ベース１２０と同様、第１部材１２１と、第２部材１２２とを有する。下面２２０ａおよび上面２２０ｂは、略水平に配置されている。 The second holding mechanism 210 has a second base 220, a second chuck 230, a support wall 140, a fixing ring 150, and a partition wall 160. The second base 220 has a substantially circular shape in a plan view. The second base 220 is, for example, a plate. The second base 220 has a lower surface 220a and an upper surface 220b. Similarly to the first base 120, the second base 220 also has a first member 121 and a second member 122. The lower surface 220a and the upper surface 220b are arranged substantially horizontally.

　第２チャック２３０は、平面視で略円形状を有する。第２チャック２３０は、例えば、プレートである。第２チャック２３０は、第２ベース２２０の下方に配置されている。第２チャック２３０は、第２ベース２２０よりも小さく、第２チャック２３０の上面は、第２ベース２２０の下面２２０ａに対向している。また、第２チャック２３０は、第２ベース２２０から所定間隔（例えば、５ｍｍ以上）をおいて第２ベース２２０に対して略平行に配置されている。第２チャック２３０は、例えば、セラミック、樹脂、金属または合成ゴムにより形成されており、数ｍｍ～１０ｍｍ程度撓むことが可能である。 The second chuck 230 has a substantially circular shape in a plan view. The second chuck 230 is, for example, a plate. The second chuck 230 is disposed below the second base 220. The second chuck 230 is smaller than the second base 220, and the upper surface of the second chuck 230 faces the lower surface 220a of the second base 220. The second chuck 230 is disposed substantially parallel to the second base 220 at a predetermined distance (for example, 5 mm or more) from the second base 220. The second chuck 230 is formed, for example, from ceramic, resin, metal, or synthetic rubber, and can bend by several mm to about 10 mm.

　第２チャック２３０は、第２保持面２３０ａと、第２保持面２３０ａとは反対側に位置する裏面２３０ｃとを有する。第２保持面２３０ａは、第２基板Ｗ２の裏面Ｗｂ（ここでは、上面）を保持する。本実施形態では、第２保持面２３０ａは、第２チャック２３０の下面であり、裏面２３０ｃは、第２チャック２３０の上面である。第２基板Ｗ２の裏面Ｗｂ（ここでは、上面）は、第２チャック２３０に接触する面である。 The second chuck 230 has a second holding surface 230a and a back surface 230c located on the opposite side to the second holding surface 230a. The second holding surface 230a holds the back surface Wb (here, the upper surface) of the second substrate W2. In this embodiment, the second holding surface 230a is the lower surface of the second chuck 230, and the back surface 230c is the upper surface of the second chuck 230. The back surface Wb (here, the upper surface) of the second substrate W2 is the surface that contacts the second chuck 230.

　第２変形機構２７０は、第２保持機構２１０を変形させる。また、本実施形態では、第２変形機構２７０は、第２保持面２３０ａの中央が第２基板Ｗ２に向かう方向（ここでは、下方向）に突出する凸形状になるように、第２チャック２３０を変形させる。また、第２変形機構２７０は、第２保持面２３０ａの中央が第２基板Ｗ２から遠ざかる方向（ここでは、上方向）に凹む凹形状になるように、第２チャック２３０を変形させる。つまり、第２変形機構２７０は、第２保持面２３０ａが凸形状になるように第２チャック２３０を変形させたり、第２保持面２３０ａが凹形状になるように第２チャック２３０を変形させたりする。以下、第２保持面２３０ａの中央が第２基板Ｗ２に向かう方向（ここでは、下方向）に突出するように第２保持面２３０ａが湾曲することを、第２保持面２３０ａが凸形状になると記載することがある。また、第２保持面２３０ａの中央が第２基板Ｗ２から遠ざかる方向（ここでは、上方向）に凹むように第２保持面２３０ａが湾曲することを、第２保持面２３０ａが凹形状になると記載することがある。本実施形態では、第２変形機構２７０は、第２チャック２３０の中央に固定されている第２移動体２７１を有する。第２移動体２７１は、貫通孔１７１ａを有するパイプを含む。 The second deformation mechanism 270 deforms the second holding mechanism 210. In this embodiment, the second deformation mechanism 270 deforms the second chuck 230 so that the center of the second holding surface 230a has a convex shape that protrudes in a direction toward the second substrate W2 (here, downward). The second deformation mechanism 270 deforms the second chuck 230 so that the center of the second holding surface 230a has a concave shape that is recessed in a direction away from the second substrate W2 (here, upward). In other words, the second deformation mechanism 270 deforms the second chuck 230 so that the second holding surface 230a has a convex shape, or deforms the second chuck 230 so that the second holding surface 230a has a concave shape. Hereinafter, when the second holding surface 230a is curved such that the center of the second holding surface 230a protrudes in a direction toward the second substrate W2 (here, downward), it may be described as the second holding surface 230a having a convex shape. Also, when the second holding surface 230a is curved such that the center of the second holding surface 230a is recessed in a direction away from the second substrate W2 (here, upward), it may be described as the second holding surface 230a having a concave shape. In this embodiment, the second deformation mechanism 270 has a second movable body 271 fixed to the center of the second chuck 230. The second movable body 271 includes a pipe having a through hole 171a.

　本実施形態では、第２変形機構２７０は、第２移動体２７１を第２ベース２２０に対して相対的に上下方向に移動させる駆動機構２７３を有する。なお、図面が複雑になることを抑制するために、特に必要な場合を除き、図１４以降において駆動機構２７３を省略することがある。駆動機構２７３は、アクチュエータを有する。駆動機構２７３は、特に限定されるものではないが、例えば、ポンプおよびモータ等の駆動源と、駆動源の駆動力を第２移動体２７１に伝達するギアおよび／またはカム等の伝達部材とを有する。駆動機構２７３は、例えば、第２ベース２２０の上面２２０ｂに固定されている。駆動機構２７３が駆動することによって、第２移動体２７１が第２ベース２２０に対して相対的に上下方向に移動する。これにより、第２チャック２３０が変形する。 In this embodiment, the second deformation mechanism 270 has a drive mechanism 273 that moves the second moving body 271 in the vertical direction relative to the second base 220. In order to prevent the drawings from becoming complicated, the drive mechanism 273 may be omitted from FIG. 14 and subsequent figures unless it is particularly necessary. The drive mechanism 273 has an actuator. The drive mechanism 273 is not particularly limited, but has, for example, a drive source such as a pump and a motor, and a transmission member such as a gear and/or a cam that transmits the drive force of the drive source to the second moving body 271. The drive mechanism 273 is fixed, for example, to the upper surface 220b of the second base 220. When the drive mechanism 273 is driven, the second moving body 271 moves in the vertical direction relative to the second base 220. This causes the second chuck 230 to deform.

　第２変形機構２７０の駆動機構２７３は、第１変形機構１７０の駆動機構１７３と同様に構成されている。具体的には、例えば、駆動機構２７３が第２移動体２７１を第２ベース２２０に対して相対的に下方向に移動させると、第２移動体２７１の下端部が固定部材１７２により第２チャック２３０の中央に固定されているため、第２移動体２７１が第２ベース２２０に対して下方向に移動することに伴って、第２チャック２３０の中央部が第２ベース２２０に対して下方向に押圧される。このため、第２チャック２３０の外周縁部が固定リング１５０により固定されている状況で、第２チャック２３０の中央部が下方向に押圧される。よって、第２チャック２３０は撓むことが可能であるため、第２チャック２３０が下方向に凸形状になるように変形する。このため、第２保持面２３０ａが凸形状になる。 The drive mechanism 273 of the second deformation mechanism 270 is configured in the same manner as the drive mechanism 173 of the first deformation mechanism 170. Specifically, for example, when the drive mechanism 273 moves the second moving body 271 downward relative to the second base 220, the lower end of the second moving body 271 is fixed to the center of the second chuck 230 by the fixing member 172, and therefore, as the second moving body 271 moves downward relative to the second base 220, the center of the second chuck 230 is pressed downward relative to the second base 220. Therefore, in a state in which the outer peripheral edge of the second chuck 230 is fixed by the fixing ring 150, the center of the second chuck 230 is pressed downward. Therefore, since the second chuck 230 can bend, the second chuck 230 is deformed to have a convex shape in the downward direction. As a result, the second holding surface 230a becomes convex.

　また、例えば、駆動機構２７３が第２移動体２７１を第２ベース２２０に対して相対的に上方向に移動させると、第２移動体２７１の下端部が固定部材１７２により第２チャック２３０の中央に固定されているため、第２移動体２７１が第２ベース２２０に対して上方向に移動することに伴って、第２チャック２３０の中央部が第２ベース２２０に対して上方向に引っ張られる。このため、第２チャック２３０の外周縁部が固定リング１５０により固定されている状況で、第２チャック２３０の中央部が上方向に引っ張られる。よって、第２チャック２３０は撓むこと可能であるため、第２チャック２３０が上方向に凹形状になるように変形する。このため、第２保持面２３０ａが凹形状になる。 Also, for example, when the driving mechanism 273 moves the second moving body 271 upward relative to the second base 220, the lower end of the second moving body 271 is fixed to the center of the second chuck 230 by the fixing member 172, and therefore, as the second moving body 271 moves upward relative to the second base 220, the center of the second chuck 230 is pulled upward relative to the second base 220. Therefore, in a state in which the outer periphery of the second chuck 230 is fixed by the fixing ring 150, the center of the second chuck 230 is pulled upward. Therefore, since the second chuck 230 can bend, the second chuck 230 is deformed to become concave in the upward direction. As a result, the second holding surface 230a becomes concave.

　本実施形態では、第１基板保持装置１００の第１保持面１３０ａの凸形状における最大曲率は、第１保持面１３０ａの凹形状における最大曲率よりも大きい。言い換えると、第１保持面１３０ａを凸形状にした場合に第１保持面１３０ａがとり得る最大曲率は、第１保持面１３０ａを凹形状にした場合に第１保持面１３０ａがとり得る最大曲率よりも大きい。なお、第１保持面１３０ａの凸形状における最大曲率は、第１保持面１３０ａの凹形状における最大曲率よりも小さくてもよいし、同じであってもよい。 In this embodiment, the maximum curvature of the first holding surface 130a of the first substrate holding device 100 in the convex shape is greater than the maximum curvature of the first holding surface 130a in the concave shape. In other words, the maximum curvature that the first holding surface 130a can have when the first holding surface 130a is convex is greater than the maximum curvature that the first holding surface 130a can have when the first holding surface 130a is concave. Note that the maximum curvature of the first holding surface 130a in the convex shape may be smaller than or the same as the maximum curvature of the first holding surface 130a in the concave shape.

　また、同様に、第２基板保持装置２００の第２保持面２３０ａの凸形状における最大曲率は、第２保持面２３０ａの凹形状における最大曲率よりも大きい。言い換えると、第２保持面２３０ａを凸形状にした場合に第２保持面２３０ａがとり得る最大曲率は、第２保持面２３０ａを凹形状にした場合に第２保持面２３０ａがとり得る最大曲率よりも大きい。なお、第２保持面２３０ａの凸形状における最大曲率は、第２保持面２３０ａの凹形状における最大曲率よりも小さくてもよいし、同じであってもよい。 Similarly, the maximum curvature of the second holding surface 230a of the second substrate holding device 200 in the convex shape is greater than the maximum curvature of the second holding surface 230a in the concave shape. In other words, the maximum curvature that the second holding surface 230a can have when the second holding surface 230a is convex is greater than the maximum curvature that the second holding surface 230a can have when the second holding surface 230a is concave. Note that the maximum curvature of the second holding surface 230a in the convex shape may be smaller than or the same as the maximum curvature of the second holding surface 230a in the concave shape.

　なお、本実施形態では、第１保持面１３０ａの凸形状における最大曲率は、第２保持面２３０ａの凸形状における最大曲率と略同じである。また、第１保持面１３０ａの凹形状における最大曲率は、第２保持面２３０ａの凹形状における最大曲率と略同じである。 In this embodiment, the maximum curvature of the convex shape of the first holding surface 130a is approximately the same as the maximum curvature of the convex shape of the second holding surface 230a. Also, the maximum curvature of the concave shape of the first holding surface 130a is approximately the same as the maximum curvature of the concave shape of the second holding surface 230a.

　本実施形態では、貼り合わせ装置１の吸引機構３００（図１２参照）は、第１基板保持装置１００および第２基板保持装置２００の貫通孔１７１ａ、貫通孔１２１ｂおよび貫通孔１２２ｂに接続されており、空気を吸引する。具体的には、吸引機構３００は、第１基板保持装置１００の貫通孔１７１ａ、貫通孔１２１ｂおよび貫通孔１２２ｂに接続される配管３０１ａと、第２基板保持装置２００の貫通孔１７１ａ、貫通孔１２１ｂおよび貫通孔１２２ｂに接続される配管３０１ｃと、吸引装置３０２（図１２参照）とを有する。吸引装置３０２は、ボルト等の固定具（図示せず）を用いて、例えば、支持フレームＳＦの第１フレームＳＦ１（図１２参照）に取り付けられている。 In this embodiment, the suction mechanism 300 (see FIG. 12) of the bonding device 1 is connected to the through holes 171a, 121b, and 122b of the first substrate holding device 100 and the second substrate holding device 200, and sucks in air. Specifically, the suction mechanism 300 has a pipe 301a connected to the through holes 171a, 121b, and 122b of the first substrate holding device 100, a pipe 301c connected to the through holes 171a, 121b, and 122b of the second substrate holding device 200, and a suction device 302 (see FIG. 12). The suction device 302 is attached to, for example, the first frame SF1 (see FIG. 12) of the support frame SF using a fastener (not shown) such as a bolt.

　本実施形態では、吸引機構３００は、調整部３０３ａ、調整部３０３ｂおよび調整部３０３ｃを有する。調整部３０３ａ、調整部３０３ｂおよび調整部３０３ｃは、貫通孔１７１ａ、貫通孔１２１ｂおよび貫通孔１２２ｂに対する吸引力をそれぞれ調整する。調整部３０３ａ、調整部３０３ｂおよび調整部３０３ｃは、例えば、アクチュエータを含む。調整部３０３ａ、調整部３０３ｂおよび調整部３０３ｃは、特に限定されるものではないが、例えば、配管３０１ａおよび配管３０１ｃに設けられる調整弁を含む。なお、貫通孔１７１ａ、貫通孔１２１ｂおよび貫通孔１２２ｂに対する吸引力を調整するために、吸引機構３００は、例えば、貫通孔１７１ａ、貫通孔１２１ｂおよび貫通孔１２２ｂに対する吸引力をそれぞれ調整する複数の吸引ポンプまたは複数の排気ファンを有してもよい。なお、貼り合わせ装置１は、吸引装置３０２を有しなくてもよい。例えば、外部の吸引装置３０２に配管３０１ａおよび配管３０１ｃが接続されていてもよい。 In this embodiment, the suction mechanism 300 has an adjustment unit 303a, an adjustment unit 303b, and an adjustment unit 303c. The adjustment unit 303a, the adjustment unit 303b, and the adjustment unit 303c adjust the suction force for the through hole 171a, the through hole 121b, and the through hole 122b, respectively. The adjustment unit 303a, the adjustment unit 303b, and the adjustment unit 303c include, for example, an actuator. The adjustment unit 303a, the adjustment unit 303b, and the adjustment unit 303c are not particularly limited, but include, for example, an adjustment valve provided in the pipe 301a and the pipe 301c. In addition, in order to adjust the suction force for the through hole 171a, the through hole 121b, and the through hole 122b, the suction mechanism 300 may have, for example, a plurality of suction pumps or a plurality of exhaust fans that adjust the suction force for the through hole 171a, the through hole 121b, and the through hole 122b, respectively. Note that the bonding apparatus 1 does not need to have the suction device 302. For example, the pipes 301a and 301c may be connected to an external suction device 302.

　図１４は、第２基板保持装置２００を模式的に示す断面図であり、第２支持ピン４１０が突出位置Ｐ１に配置された状態を示す図である。図１４に示すように、本実施形態では、第２基板保持装置２００は、複数の第２支持ピン４１０を有する。複数の第２支持ピン４１０は、第２保持機構２１０に保持される前の第２基板Ｗ２を支持する。なお、第２基板保持装置２００は、複数の第２支持ピン４１０を有しなくてもよい。 FIG. 14 is a cross-sectional view showing a schematic diagram of the second substrate holding device 200, illustrating a state in which the second support pin 410 is positioned at the protruding position P1. As shown in FIG. 14, in this embodiment, the second substrate holding device 200 has a plurality of second support pins 410. The plurality of second support pins 410 support the second substrate W2 before it is held by the second holding mechanism 210. Note that the second substrate holding device 200 does not necessarily have a plurality of second support pins 410.

　本実施形態では、複数の第２支持ピン４１０は、第２基板Ｗ２の裏面Ｗｂ（ここでは、上面）を吸着し保持する。第２支持ピン４１０は、空気が通過する貫通孔を有する。吸引機構３００は、第２支持ピン４１０の貫通孔に接続される配管３０１ｄと、配管３０１ｄ内を開状態と閉状態とに切り替えるバルブ３１０ａとを有する。配管３０１ｄは、例えば、ゴムチューブを有する。ゴムチューブに第２支持ピン４１０の上端部（図示せず）が差し込まれることによって、配管３０１ｄに第２支持ピン４１０が接続されている。吸引機構３００が駆動するとともにバルブ３１０ａが開状態になると、第２支持ピン４１０の貫通孔内の空気が吸引され、第２支持ピン４１０の貫通孔内が負圧になる。このため、吸引装置３０２が駆動し、バルブ３１０ａが開いた状態で、第２基板Ｗ２を第２支持ピン４１０の先端（ここでは、下端）に近づけると、第２基板Ｗ２の裏面Ｗｂが第２支持ピン４１０に吸着される。また、第２支持ピン４１０の貫通孔には、吸引機構３００とは別の吸引装置が接続されていてもよい。なお、図示しないが、第２保持面２３０ａが上方向を向いた状態で第２支持ピン４１０から第２保持面２３０ａに第２基板Ｗ２が渡された後、第２保持機構２１０が上下反転するように、第２基板保持装置２００が構成されていてもよい。この場合、第２支持ピン４１０は、第２基板Ｗ２を吸引しなくてもよい。 In this embodiment, the multiple second support pins 410 adsorb and hold the back surface Wb (here, the upper surface) of the second substrate W2. The second support pins 410 have a through hole through which air passes. The suction mechanism 300 has a pipe 301d connected to the through hole of the second support pin 410, and a valve 310a that switches the inside of the pipe 301d between an open state and a closed state. The pipe 301d has, for example, a rubber tube. The second support pin 410 is connected to the pipe 301d by inserting the upper end (not shown) of the second support pin 410 into the rubber tube. When the suction mechanism 300 is driven and the valve 310a is opened, the air in the through hole of the second support pin 410 is sucked in, and the inside of the through hole of the second support pin 410 becomes negative pressure. Therefore, when the suction device 302 is driven and the valve 310a is open, the second substrate W2 is brought close to the tip (here, the lower end) of the second support pin 410, and the back surface Wb of the second substrate W2 is attracted to the second support pin 410. In addition, a suction device other than the suction mechanism 300 may be connected to the through hole of the second support pin 410. Although not shown, the second substrate holding device 200 may be configured so that the second holding mechanism 210 is turned upside down after the second substrate W2 is transferred from the second support pin 410 to the second holding surface 230a with the second holding surface 230a facing upward. In this case, the second support pin 410 does not need to suck the second substrate W2.

　第２支持ピン４１０のその他の構成は、支持ピン４００と同様である。例えば、第２支持ピン４１０は、第２保持面２３０ａから下方に突出する突出位置Ｐ１（図１４参照）と、第２保持面２３０ａから下方に突出しない非突出位置Ｐ２との間で移動可能である。 The rest of the configuration of the second support pin 410 is similar to that of the support pin 400. For example, the second support pin 410 is movable between a protruding position P1 (see FIG. 14) where the second support pin 410 protrudes downward from the second holding surface 230a, and a non-protruding position P2 where the second support pin 410 does not protrude downward from the second holding surface 230a.

　第２基板保持装置２００は、上述したように、第２支持ピン４１０を上下方向に移動させるピンアクチュエータ４６０を有する。ピンアクチュエータ４６０は、例えば、第２ベース２２０の上面２２０ｂに固定されている。ピンアクチュエータ４６０は、特に限定されるものではないが、例えば、ポンプまたはモータ等の駆動源と、駆動源の駆動力を第２支持ピン４１０の上部に伝達するギアおよび／またはカム等の伝達部材とを有する。ピンアクチュエータ４６０が駆動することによって、第２支持ピン４１０が第２ベース２２０および第２チャック２３０に対して相対的に上下方向に移動する。例えば、ピンアクチュエータ４６０が第２支持ピン４１０を突出位置Ｐ１に移動させることにより、第２支持ピン４１０は、第２保持面２３０ａから突出し、搬送装置ＴＲから第２基板Ｗ２を受け取ることが可能となる。つまり、第２支持ピン４１０は、突出位置Ｐ１で第２基板Ｗ２を吸着する。第２支持ピン４１０は、搬送装置ＴＲから第２基板Ｗ２を受け取る場合、第２保持面２３０ａから例えば１０ｍｍ以上突出した状態で、第２基板Ｗ２を受け取る。このとき、全ての第２支持ピン４１０の先端の高さ位置は、略一定である。第２基板Ｗ２は、最大で数ｍｍ程度反っている可能性があるが、第２支持ピン４１０による空気の吸引によって、第２基板Ｗ２は第２支持ピン４１０に引き寄せられて吸着される。また、例えば、ピンアクチュエータ４６０が第２支持ピン４１０を突出位置Ｐ１から非突出位置Ｐ２に移動させることにより、第２支持ピン４１０は、第２保持面２３０ａから突出しなくなる。これにより、第２基板Ｗ２が第２保持面２３０ａの下方の位置から上方向に移動されるため、第２支持ピン４１０から第２保持面２３０ａに第２基板Ｗ２が渡される。 As described above, the second substrate holding device 200 has a pin actuator 460 that moves the second support pin 410 in the vertical direction. The pin actuator 460 is fixed to, for example, the upper surface 220b of the second base 220. The pin actuator 460 is not particularly limited, but has, for example, a driving source such as a pump or a motor, and a transmission member such as a gear and/or a cam that transmits the driving force of the driving source to the upper part of the second support pin 410. When the pin actuator 460 is driven, the second support pin 410 moves in the vertical direction relative to the second base 220 and the second chuck 230. For example, when the pin actuator 460 moves the second support pin 410 to the protruding position P1, the second support pin 410 protrudes from the second holding surface 230a and can receive the second substrate W2 from the transport device TR. In other words, the second support pin 410 adsorbs the second substrate W2 at the protruding position P1. When the second support pins 410 receive the second substrate W2 from the transport device TR, the second substrate W2 is received in a state where it protrudes, for example, 10 mm or more from the second holding surface 230a. At this time, the height positions of the tips of all the second support pins 410 are approximately constant. The second substrate W2 may be warped by a maximum of several mm, but the second substrate W2 is attracted to the second support pins 410 and adsorbed by the second support pins 410 due to the suction of air by the second support pins 410. In addition, for example, the pin actuator 460 moves the second support pins 410 from the protruding position P1 to the non-protruding position P2, so that the second support pins 410 do not protrude from the second holding surface 230a. As a result, the second substrate W2 is moved upward from a position below the second holding surface 230a, and the second substrate W2 is handed over from the second support pins 410 to the second holding surface 230a.

　また、本実施形態では、第２基板保持装置２００は、第２基板Ｗ２の反りを検出する反り検出装置５００を備える。なお、第２基板保持装置２００は、反り検出装置５００を備えなくてもよい。 In addition, in this embodiment, the second substrate holding device 200 is equipped with a warpage detection device 500 that detects warpage of the second substrate W2. Note that the second substrate holding device 200 does not necessarily have to be equipped with the warpage detection device 500.

　第２基板保持装置２００のその他の構成は、第１基板保持装置１００と同様である。 The rest of the configuration of the second substrate holding device 200 is the same as that of the first substrate holding device 100.

　次に、図１５を参照して、貼り合わせ装置１についてさらに説明する。図１５は、第２実施形態の貼り合わせ装置１の構成を示すブロック図である。 Next, the bonding device 1 will be further described with reference to FIG. 15. FIG. 15 is a block diagram showing the configuration of the bonding device 1 of the second embodiment.

　本実施形態では、貼り合わせ装置１は、制御装置１９０を有する。本実施形態では、制御装置１９０は、貼り合わせ装置１を制御する。制御装置１９０は、第１基板保持装置１００、第２基板保持装置２００および吸引機構３００等を制御する。 In this embodiment, the bonding apparatus 1 has a control device 190. In this embodiment, the control device 190 controls the bonding apparatus 1. The control device 190 controls the first substrate holding device 100, the second substrate holding device 200, the suction mechanism 300, and the like.

　制御装置１９０は、制御部１９１および記憶部１９３を含む。記憶部１９３は、データおよびコンピュータプログラムを記憶する。データは、例えば、第１基板Ｗ１および第２基板Ｗ２を保持するための処理内容および処理手順を規定する。また、データは、第１基板Ｗ１と第２基板Ｗ２とを貼り合わせるための処理内容および処理手順を規定する。制御部１９１は、記憶部１９３の記憶しているコンピュータプログラムを実行して、基板保持動作および基板貼り付け動作を実行する。 The control device 190 includes a control unit 191 and a memory unit 193. The memory unit 193 stores data and computer programs. The data, for example, specifies the process content and process procedures for holding the first substrate W1 and the second substrate W2. The data also specifies the process content and process procedures for bonding the first substrate W1 and the second substrate W2 together. The control unit 191 executes the computer program stored in the memory unit 193 to perform the substrate holding operation and the substrate bonding operation.

　制御部１９１は、第１移動機構６１０を制御する。制御部１９１は、第１移動機構６１０により、第１基板保持装置１００と第２基板保持装置２００とを位置合わせする。具体的には、制御部１９１は、第１移動機構６１０により、第１基板保持装置１００および第２基板保持装置２００の少なくとも一方を水平方向に移動させる。本実施形態では、制御部１９１は、第１移動機構６１０により、第２基板保持装置２００を水平方向に移動させる。 The control unit 191 controls the first movement mechanism 610. The control unit 191 aligns the first substrate holding device 100 and the second substrate holding device 200 using the first movement mechanism 610. Specifically, the control unit 191 moves at least one of the first substrate holding device 100 and the second substrate holding device 200 in the horizontal direction using the first movement mechanism 610. In this embodiment, the control unit 191 moves the second substrate holding device 200 in the horizontal direction using the first movement mechanism 610.

　制御部１９１は、第２移動機構６２０を制御する。制御部１９１は、第２移動機構６２０により、第１基板保持装置１００および第２基板保持装置２００の少なくとも一方を上下方向に移動させる。本実施形態では、制御部１９１は、第２移動機構６２０により、第２基板保持装置２００を第１基板保持装置１００に対して相対的に上下方向に移動させる。 The control unit 191 controls the second movement mechanism 620. The control unit 191 moves at least one of the first substrate holding device 100 and the second substrate holding device 200 in the vertical direction by the second movement mechanism 620. In this embodiment, the control unit 191 moves the second substrate holding device 200 in the vertical direction relative to the first substrate holding device 100 by the second movement mechanism 620.

　制御部１９１は、第１基板保持装置１００および第２基板保持装置２００を制御する。制御部１９１は、第１基板Ｗ１および第２基板Ｗ２の反り情報を取得する。制御部１９１は、第１実施形態と同様にして、第１基板Ｗ１の反り情報に基づいて、第１基板保持装置１００を制御して第１基板Ｗ１を保持させる。また、制御部１９１は、第１実施形態と同様にして、第２基板Ｗ２の反り情報に基づいて、第２基板保持装置２００を制御して第２基板Ｗ２を保持させる。 The control unit 191 controls the first substrate holding device 100 and the second substrate holding device 200. The control unit 191 acquires warpage information of the first substrate W1 and the second substrate W2. Similar to the first embodiment, the control unit 191 controls the first substrate holding device 100 to hold the first substrate W1 based on the warpage information of the first substrate W1. Also, similar to the first embodiment, the control unit 191 controls the second substrate holding device 200 to hold the second substrate W2 based on the warpage information of the second substrate W2.

　第２基板Ｗ２の反り情報は、第２基板Ｗ２が基板凹形状であるか、基板凸形状であるか、基板平面形状であるかを示す。具体的には、第２基板Ｗ２の基板凹形状は、第２基板Ｗ２の表面Ｗａ（ここでは、下面）が裏面Ｗｂ側（ここでは、上方向）に凹み、且つ、裏面Ｗｂ（ここでは、上面）が表面Ｗａとは反対側（ここでは、上方向）に突出する形状を示す。つまり、本実施形態では、第２基板Ｗ２の基板凹形状は、第２基板Ｗ２の表面Ｗａ（ここでは、下面）の中央が上方向に凹む形状を示す。また、第２基板Ｗ２の基板凸形状は、第２基板Ｗ２の表面Ｗａが裏面Ｗｂとは反対側（ここでは、下方向）に突出し、且つ、裏面Ｗｂが表面Ｗａ側（ここでは、下方向）に凹む形状を示す。つまり、本実施形態では、第２基板Ｗ２の基板凸形状は、基板Ｗの表面Ｗａの中央が下方向に突出する形状を示す。基板平面形状は、第２基板Ｗ２の表面Ｗａおよび裏面Ｗｂの両方が平面状になっている形状を示す。なお、以下の説明において、基板Ｗ（第１基板Ｗ１および第２基板Ｗ２）が基板凹形状である状態を、表面Ｗａが凹形状であると記載することがある。また、基板Ｗ（第１基板Ｗ１および第２基板Ｗ２）が基板凸形状である状態を、表面Ｗａが凸形状であると記載することがある。また、基板Ｗ（第１基板Ｗ１および第２基板Ｗ２）が基板平面形状である状態を、表面Ｗａが平面状であると記載することがある。また、本実施形態では、第２基板Ｗ２の反り情報は、第２基板Ｗ２の反り方向に加え、第２基板Ｗ２の反り量を示す。 The warpage information of the second substrate W2 indicates whether the second substrate W2 has a concave substrate shape, a convex substrate shape, or a planar substrate shape. Specifically, the concave substrate shape of the second substrate W2 indicates a shape in which the surface Wa (here, the lower surface) of the second substrate W2 is concave toward the back surface Wb side (here, the upward direction), and the back surface Wb (here, the upper surface) protrudes on the opposite side to the surface Wa (here, the upward direction). That is, in this embodiment, the concave substrate shape of the second substrate W2 indicates a shape in which the center of the surface Wa (here, the lower surface) of the second substrate W2 is concave upward. In addition, the convex substrate shape of the second substrate W2 indicates a shape in which the surface Wa of the second substrate W2 protrudes on the opposite side to the back surface Wb (here, the downward direction), and the back surface Wb is concave toward the surface Wa side (here, the downward direction). That is, in this embodiment, the convex substrate shape of the second substrate W2 indicates a shape in which the center of the surface Wa of the substrate W protrudes downward. The substrate planar shape refers to a shape in which both the front surface Wa and the back surface Wb of the second substrate W2 are planar. In the following description, a state in which the substrate W (first substrate W1 and second substrate W2) has a concave substrate shape may be described as the front surface Wa being concave. A state in which the substrate W (first substrate W1 and second substrate W2) has a convex substrate shape may be described as the front surface Wa being convex. A state in which the substrate W (first substrate W1 and second substrate W2) has a planar substrate shape may be described as the front surface Wa being planar. In this embodiment, the warpage information of the second substrate W2 indicates the warpage amount of the second substrate W2 in addition to the warpage direction of the second substrate W2.

　また、制御部１９１は、第１基板Ｗ１および第２基板Ｗ２の反り情報に基づいて、第１基板保持装置１００および第２基板保持装置２００を制御して、第１基板Ｗ１と第２基板Ｗ２とを貼り合わせる。 The control unit 191 also controls the first substrate holding device 100 and the second substrate holding device 200 based on the warpage information of the first substrate W1 and the second substrate W2 to bond the first substrate W1 and the second substrate W2 together.

　第２実施形態のその他の構成は、第１実施形態と同様である。 The rest of the configuration of the second embodiment is the same as that of the first embodiment.

　次に、図１６を参照して、本実施形態の貼り合わせ装置１による貼り合わせ方法について説明する。図１６は、第２施形態の貼り合わせ装置１による貼り合わせ方法を示すフローチャートである。本実施形態では、貼り合わせ装置１による貼り合わせ方法は、ステップＳ２１～ステップＳ２４を含む。なお、ステップＳ２１は、本発明の「第１基板を保持する工程」の一例である。ステップＳ２２は、本発明の「第２基板を保持する工程」の一例である。ステップＳ２４は、本発明の「貼り合わせる工程」の一例である。 Next, with reference to FIG. 16, a bonding method using the bonding apparatus 1 of this embodiment will be described. FIG. 16 is a flowchart showing the bonding method using the bonding apparatus 1 of the second embodiment. In this embodiment, the bonding method using the bonding apparatus 1 includes steps S21 to S24. Note that step S21 is an example of the "step of holding the first substrate" of the present invention. Step S22 is an example of the "step of holding the second substrate" of the present invention. Step S24 is an example of the "step of bonding" of the present invention.

　図１６に示すように、ステップＳ２１において、制御部１９１は、第１基板保持装置１００により第１基板Ｗ１を保持する。具体的には、制御部１９１は、図９を用いて説明した基板保持方法と同様にして、第１基板保持装置１００に第１基板Ｗ１を保持させる。このとき、第１基板Ｗ１の表面Ｗａは上方向を向き、裏面Ｗｂは下方向を向いている。 As shown in FIG. 16, in step S21, the control unit 191 holds the first substrate W1 by the first substrate holding device 100. Specifically, the control unit 191 causes the first substrate holding device 100 to hold the first substrate W1 in a manner similar to the substrate holding method described with reference to FIG. 9. At this time, the front surface Wa of the first substrate W1 faces upward, and the back surface Wb faces downward.

　次に、ステップＳ２２において、制御部１９１は、第２基板保持装置２００により第２基板Ｗ２を保持する。具体的には、制御部１９１は、図９を用いて説明した基板保持方法と同様にして、第２基板保持装置２００に第２基板Ｗ２を保持させる。このとき、第２基板保持装置２００の第２支持ピン４１０は、第２基板Ｗ２を吸引して第２基板Ｗ２の裏面Ｗｂを支持する。また、このとき、第２基板Ｗ２の表面Ｗａは下方向を向き、裏面Ｗｂは上方向を向いている。なお、第２基板保持装置２００は、第２保持面２３０ａが上方向を向いた状態で第２基板Ｗ２を保持した後、図示しない反転機構により上下反転されてもよい。 Next, in step S22, the control unit 191 holds the second substrate W2 by the second substrate holding device 200. Specifically, the control unit 191 causes the second substrate holding device 200 to hold the second substrate W2 in the same manner as the substrate holding method described with reference to FIG. 9. At this time, the second support pins 410 of the second substrate holding device 200 suck the second substrate W2 to support the back surface Wb of the second substrate W2. Also, at this time, the front surface Wa of the second substrate W2 faces downward, and the back surface Wb faces upward. Note that the second substrate holding device 200 may hold the second substrate W2 with the second holding surface 230a facing upward, and then be turned upside down by an inversion mechanism (not shown).

　なお、ステップＳ２１およびステップＳ２２は、処理される順序が逆であってもよいし、並行して処理されてもよい。 Note that steps S21 and S22 may be processed in the reverse order, or may be processed in parallel.

　次に、ステップＳ２３において、制御部１９１は、第１移動機構６１０により第１基板Ｗ１と第２基板Ｗ２とを位置合わせする。具体的には、制御部１９１は、位置検出センサ（図示せず）により第１基板Ｗ１と第２基板Ｗ２との相対位置を示す相対位置情報を取得する。例えば、位置検出センサは、第１基板Ｗ１および第２基板Ｗ２に設けられたアライメントマークを検出する。そして、制御部１９１は、相対位置情報に基づいて、第１移動機構６１０により第２基板保持装置２００を水平方向に移動させる。これにより、第１基板Ｗ１と第２基板Ｗ２とが位置合わせされる。なお、位置検出センサによりアライメントマークを検出する際に、第１変形機構１７０および第２変形機構２７０により、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａを平面状にしてもよい。このように構成すれば、位置検出センサによる検出精度を向上させることができる。 Next, in step S23, the control unit 191 aligns the first substrate W1 and the second substrate W2 using the first moving mechanism 610. Specifically, the control unit 191 acquires relative position information indicating the relative positions of the first substrate W1 and the second substrate W2 using a position detection sensor (not shown). For example, the position detection sensor detects alignment marks provided on the first substrate W1 and the second substrate W2. Then, the control unit 191 moves the second substrate holding device 200 in the horizontal direction based on the relative position information using the first moving mechanism 610. This aligns the first substrate W1 and the second substrate W2. Note that when detecting the alignment marks using the position detection sensor, the surfaces Wa of the first substrate W1 and the second substrate W2 may be made flat by the first deformation mechanism 170 and the second deformation mechanism 270. This configuration can improve the detection accuracy of the position detection sensor.

　次に、ステップＳ２４において、制御部１９１は、第２移動機構６２０により第１基板Ｗ１と第２基板Ｗ２とを貼り合わせる。具体的には、制御部１９１は、第１基板Ｗ１および第２基板Ｗ２の少なくとも一方を上下方向に移動させて第１基板Ｗ１と第２基板Ｗ２とを貼り合わせる。本実施形態では、制御部１９１は、第２移動機構６２０により第２基板保持装置２００を下方向に移動させて、第１基板Ｗ１と第２基板Ｗ２とを貼り合わせる。 Next, in step S24, the control unit 191 bonds the first substrate W1 and the second substrate W2 together using the second movement mechanism 620. Specifically, the control unit 191 bonds the first substrate W1 and the second substrate W2 together by moving at least one of the first substrate W1 and the second substrate W2 in the vertical direction. In this embodiment, the control unit 191 bonds the first substrate W1 and the second substrate W2 together by moving the second substrate holding device 200 in the downward direction using the second movement mechanism 620.

　このとき、制御部１９１は、第１基板Ｗ１の反り情報および第２基板Ｗ２の反り情報に基づいて、第１基板保持装置１００の第１チャック１３０および第２基板保持装置２００の第２チャック２３０の少なくとも一方を変形させて、第１基板Ｗ１と第２基板Ｗ２とを貼り合わせる。 At this time, the control unit 191 deforms at least one of the first chuck 130 of the first substrate holding device 100 and the second chuck 230 of the second substrate holding device 200 based on the warpage information of the first substrate W1 and the warpage information of the second substrate W2, thereby bonding the first substrate W1 and the second substrate W2 together.

　以上のようにして、貼り合わせ処理が終了する。 The joining process is now complete.

　次に、図１７を参照して、第２実施形態の貼り合わせ方法のステップＳ２４について詳細に説明する。図１７は、第２実施形態の貼り合わせ装置１による貼り合わせ方法における貼り合わせ工程（ステップＳ２４）を示すフローチャートである。本実施形態では、貼り合わせ工程（ステップＳ２４）は、ステップＳ２４１～ステップＳ２４４を含む。 Next, step S24 of the bonding method of the second embodiment will be described in detail with reference to FIG. 17. FIG. 17 is a flow chart showing the bonding process (step S24) in the bonding method using the bonding apparatus 1 of the second embodiment. In this embodiment, the bonding process (step S24) includes steps S241 to S244.

　図１７に示すように、ステップＳ２４１において、制御部１９１は、反り情報に基づいて、貼り合わせ時における第１チャック１３０および第２チャック２３０の反り形状を決定する。具体的には、制御部１９１は、第１基板Ｗ１および第２基板Ｗ２の反り情報に基づいて、第１基板Ｗ１および第２基板Ｗ２の反り方向の組合せのパターンを判別する。 As shown in FIG. 17, in step S241, the control unit 191 determines the warpage shapes of the first chuck 130 and the second chuck 230 at the time of bonding based on the warpage information. Specifically, the control unit 191 determines the combination pattern of the warpage directions of the first substrate W1 and the second substrate W2 based on the warpage information of the first substrate W1 and the second substrate W2.

　具体的には、第１基板Ｗ１および第２基板Ｗ２の反り方向の組合せパターンは、例えば、６つある。例えば、第１の組合せパターンは、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの両方が平面状（基板平面形状）であるパターンである。第２の組合せパターンは、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの一方が平面状（基板平面形状）であり、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの他方が凸形状（基板凸形状）であるパターンである。第３の組合せパターンは、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの一方が平面状（基板平面形状）であり、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの他方が凹形状（基板凹形状）であるパターンである。第４の組合せパターンは、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの両方が凸形状（基板凸形状）であるパターンである。第５の組合せパターンは、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの一方が凸形状（基板凸形状）であり、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの他方が凹形状（基板凹形状）であるパターンである。第６の組合せパターンは、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの両方が凹形状（基板凹形状）であるパターンである。 Specifically, there are, for example, six combination patterns of the warpage directions of the first substrate W1 and the second substrate W2. For example, the first combination pattern is a pattern in which both surfaces Wa of the first substrate W1 and the second substrate W2 are flat (substrate planar shape). The second combination pattern is a pattern in which one of the surfaces Wa of the first substrate W1 and the second substrate W2 is flat (substrate planar shape) and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex (substrate convex shape). The third combination pattern is a pattern in which one of the surfaces Wa of the first substrate W1 and the second substrate W2 is flat (substrate planar shape) and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave (substrate concave shape). The fourth combination pattern is a pattern in which both surfaces Wa of the first substrate W1 and the second substrate W2 are convex (substrate convex shape). The fifth combination pattern is a pattern in which one of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex (substrate convex shape) and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave (substrate concave shape). The sixth combination pattern is a pattern in which both of the surfaces Wa of the first substrate W1 and the second substrate W2 are concave (substrate concave shape).

　そして、制御部１９１は、第１の組合せパターン～第６の組合せパターンに基づいて、貼り合わせ時における第１チャック１３０および第２チャック２３０の反り形状を決定する。つまり、制御部１９１は、貼り合わせ時における第１保持面１３０ａおよび第２保持面２３０ａの反り形状を決定する。 Then, the control unit 191 determines the warped shape of the first chuck 130 and the second chuck 230 when bonding based on the first to sixth combination patterns. In other words, the control unit 191 determines the warped shape of the first holding surface 130a and the second holding surface 230a when bonding.

　このとき、本実施形態では、制御部１９１は、第１基板Ｗ１および第２基板Ｗ２の反り量に基づいて、貼り合わせ時における第１チャック１３０および第２チャック２３０の反り量を決定してもよい。つまり、制御部１９１は、貼り合わせ時における第１保持面１３０ａおよび第２保持面２３０ａの反り量を決定してもよい。 At this time, in this embodiment, the control unit 191 may determine the amount of warping of the first chuck 130 and the second chuck 230 during bonding based on the amount of warping of the first substrate W1 and the second substrate W2. In other words, the control unit 191 may determine the amount of warping of the first holding surface 130a and the second holding surface 230a during bonding.

　次に、ステップＳ２４２において、制御部１９１は、ステップＳ２４１で決定した反り形状になるように、第１チャック１３０および第２チャック２３０を変形させる。具体的には、制御部１９１は、ステップＳ２４１で決定した反り形状になるように、第１変形機構１７０により第１チャック１３０を変形させるとともに、第２変形機構２７０により第２チャック２３０を変形させる。このとき、例えば、制御部１９１は、第１ベース１２０を固定した状態で、第１変形機構１７０を駆動することにより、第１移動体１７１を第１ベース１２０に対して相対的に上下方向に移動させることによって、第１チャック１３０を変形させる。また、このとき、例えば、制御部１９１は、第２ベース２２０を固定した状態で、第２変形機構２７０を駆動することにより、第２移動体２７１を第２ベース２２０に対して相対的に上下方向に移動させることによって、第２チャック２３０を変形させる。 Next, in step S242, the control unit 191 deforms the first chuck 130 and the second chuck 230 so as to have the warped shape determined in step S241. Specifically, the control unit 191 deforms the first chuck 130 by the first deformation mechanism 170 and deforms the second chuck 230 by the second deformation mechanism 270 so as to have the warped shape determined in step S241. At this time, for example, with the first base 120 fixed, the control unit 191 drives the first deformation mechanism 170 to move the first moving body 171 in the vertical direction relative to the first base 120, thereby deforming the first chuck 130. At this time, for example, the control unit 191 drives the second deformation mechanism 270 while the second base 220 is fixed, thereby moving the second moving body 271 in the vertical direction relative to the second base 220, thereby deforming the second chuck 230.

　次に、ステップＳ２４３において、制御部１９１は、第１基板Ｗ１と第２基板Ｗ２とを点接触させる。具体的には、制御部１９１は、第２移動機構６２０により第１基板Ｗ１の中央と第２基板Ｗ２の中央とを点接触させる。 Next, in step S243, the control unit 191 brings the first substrate W1 and the second substrate W2 into point contact. Specifically, the control unit 191 causes the second moving mechanism 620 to bring the center of the first substrate W1 into point contact with the center of the second substrate W2.

　次に、ステップＳ２４４において、制御部１９１は、第１基板Ｗ１と第２基板Ｗ２とを全面接触させる。つまり、制御部１９１は、第１基板Ｗ１と第２基板Ｗ２とを貼り合わせる。 Next, in step S244, the control unit 191 brings the first substrate W1 and the second substrate W2 into full contact with each other. In other words, the control unit 191 bonds the first substrate W1 and the second substrate W2 together.

　以下、図１８～図２３を参照して、第１の組合せパターン～第６の組合せパターンの各々における貼り合わせ方法についてさらに説明する。 Below, the lamination methods for each of the first to sixth combination patterns will be further explained with reference to Figures 18 to 23.

（第１の組合せパターン）
　図１８は、第１の組合せパターンにおける貼り合わせ方法を説明するための模式図である。図１８を参照して、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの両方が平面状である場合について説明する。言い換えると、第１基板Ｗ１および第２基板Ｗ２の両方が基板平面形状である場合について説明する。 (First combination pattern)
Fig. 18 is a schematic diagram for explaining a bonding method in a first combination pattern. With reference to Fig. 18, a case where both the surfaces Wa of the first substrate W1 and the second substrate W2 are planar will be explained. In other words, a case where both the first substrate W1 and the second substrate W2 have a substrate planar shape will be explained.

　図１８に示すように、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの両方が平面状である場合（図１８の上段に示す状態）、制御部１９１は、例えば、第１チャック１３０の第１保持面１３０ａおよび第２チャック２３０の第２保持面２３０ａのいずれか一方を平面状に維持し、第１保持面１３０ａおよび第２保持面２３０ａの他方を凸形状にする。本実施形態では、制御部１９１は、例えば、第１保持面１３０ａを平面状に維持し、第２保持面２３０ａを凸形状にする（図１８の中段に示す状態）。このとき、例えば、制御部１９１は、第２ベース２２０を固定した状態で、第２変形機構２７０を駆動することにより、第２移動体２７１を第２ベース２２０に対して相対的に下方向に移動させることによって、第２保持面２３０ａを凸形状にする。なお、制御部１９１は、第１保持面１３０ａおよび第２保持面２３０ａの両方を凸形状にしてもよい。 18, when both the surfaces Wa of the first substrate W1 and the second substrate W2 are planar (the state shown in the upper part of FIG. 18), the control unit 191, for example, maintains either the first holding surface 130a of the first chuck 130 or the second holding surface 230a of the second chuck 230 in a planar shape, and makes the other of the first holding surface 130a and the second holding surface 230a in a convex shape. In this embodiment, the control unit 191, for example, maintains the first holding surface 130a in a planar shape, and makes the second holding surface 230a in a convex shape (the state shown in the middle part of FIG. 18). At this time, for example, the control unit 191 drives the second deformation mechanism 270 while fixing the second base 220, thereby moving the second moving body 271 downward relative to the second base 220, thereby making the second holding surface 230a in a convex shape. The control unit 191 may also make both the first holding surface 130a and the second holding surface 230a convex.

　その後、制御部１９１は、第２移動機構６２０により第２基板保持装置２００を下方向に移動させる。このとき、第２支持台ＳＢ２、第２ベース２２０および第２支持ピン４１０が、同じ量だけ下方向に移動する。これにより、第１基板Ｗ１の表面Ｗａ（ここでは、上面）と第２基板Ｗ２の表面Ｗａ（ここでは、下面）とが点接触する。 Then, the control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. At this time, the second support stand SB2, the second base 220 and the second support pins 410 move downward by the same amount. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.

　そして、制御部１９１は、第２基板Ｗ２に対する吸引力を徐々に低下させる。これにより、第２基板Ｗ２の復元力によって、第２基板Ｗ２が第２チャック２３０から剥がれるとともに、第２基板Ｗ２の表面Ｗａ（ここでは、下面）が平面状に近づくように変形しながら、第２基板Ｗ２の表面Ｗａの全面が第１基板Ｗ１の表面Ｗａ（ここでは、上面）の全面に密着する（図１８の下段に示す状態）。具体的には、第１基板Ｗ１の表面Ｗａと第２基板Ｗ２の表面Ｗａとが中央の１点で点接触した状態から、接触領域が径方向外側に徐々に広がり第１基板Ｗ１の表面Ｗａと第２基板Ｗ２の表面Ｗａとが全面で接触する。従って、第１基板Ｗ１と第２基板Ｗ２との間にボイドが生じることが抑制される。 Then, the control unit 191 gradually reduces the suction force on the second substrate W2. As a result, the second substrate W2 is peeled off from the second chuck 230 by the restoring force of the second substrate W2, and the surface Wa (here, the lower surface) of the second substrate W2 is deformed to become closer to a flat surface, and the entire surface Wa of the second substrate W2 is brought into close contact with the entire surface Wa of the first substrate W1 (here, the upper surface) (the state shown in the lower part of FIG. 18). Specifically, from a state in which the surface Wa of the first substrate W1 and the surface Wa of the second substrate W2 are in point contact at one central point, the contact area gradually expands radially outward, and the surface Wa of the first substrate W1 and the surface Wa of the second substrate W2 are in contact over their entire surfaces. Therefore, the generation of voids between the first substrate W1 and the second substrate W2 is suppressed.

　なお、本実施形態では、制御部１９１は、第２基板Ｗ２に対する吸引力を徐々に低下させる場合、第２基板Ｗ２の中央から径方向外側に向かって徐々に吸引力を低下させる。具体的には、制御部１９１は、調整部３０３ａを開状態から閉状態に切り替えた後、調整部３０３ｂを開状態から閉状態に切り替え、その後、調整部３０３ｃを開状態から閉状態に切り替える。このようにして、貫通孔１７１ａ、貫通孔１２１ｂおよび貫通孔１２２ｂに対する吸引力をこの順に低下させる。従って、第１基板Ｗ１と第２基板Ｗ２とが中央の１点で点接触した状態から、第１基板Ｗ１と第２基板Ｗ２との接触領域が、径方向外側に徐々に広がりやすくなる。よって、第１基板Ｗ１と第２基板Ｗ２との間にボイドが生じることを容易に抑制することができる。 In this embodiment, when the control unit 191 gradually reduces the suction force on the second substrate W2, the control unit 191 gradually reduces the suction force from the center of the second substrate W2 toward the radially outer side. Specifically, the control unit 191 switches the adjustment unit 303a from an open state to a closed state, then switches the adjustment unit 303b from an open state to a closed state, and then switches the adjustment unit 303c from an open state to a closed state. In this manner, the suction forces on the through holes 171a, 121b, and 122b are reduced in this order. Therefore, from a state in which the first substrate W1 and the second substrate W2 are in point contact at one point in the center, the contact area between the first substrate W1 and the second substrate W2 tends to gradually expand radially outward. Therefore, it is possible to easily suppress the generation of voids between the first substrate W1 and the second substrate W2.

　また、図示しないが、制御部１９１は、第１基板Ｗ１の表面Ｗａと第２基板Ｗ２の表面Ｗａとが点接触した状態から、第２基板Ｗ２に対する吸引力を低下させず、第２保持面２３０ａが平面状になるように第２チャック２３０を変形させてもよい。この場合、制御部１９１は、第２移動体２７１が上下方向に移動しないように、第２ベース２２０を下方向に移動させる。具体的には、制御部１９１は、第２変形機構２７０により第２ベース２２０を下方向に移動させながら、駆動機構２７３により、同じ速度で、第２移動体２７１を第２ベース２２０に対して相対的に上方向に移動させる。このとき、制御部１９１は、第２基板保持装置２００の第２支持ピン４１０が第２保持面２３０ａから下方向に突出しないように、ピンアクチュエータ４６０により第２支持ピン４１０を第２ベース２２０に対して相対的に上方向に移動させる。これにより、第１基板Ｗ１と第２基板Ｗ２とが全面で接触する。 In addition, although not shown, the control unit 191 may deform the second chuck 230 from a state in which the surface Wa of the first substrate W1 and the surface Wa of the second substrate W2 are in point contact, so that the second holding surface 230a becomes flat, without reducing the suction force on the second substrate W2. In this case, the control unit 191 moves the second base 220 downward so that the second moving body 271 does not move in the vertical direction. Specifically, while moving the second base 220 downward by the second deformation mechanism 270, the control unit 191 moves the second moving body 271 upward relative to the second base 220 at the same speed by the drive mechanism 273. At this time, the control unit 191 moves the second support pin 410 upward relative to the second base 220 by the pin actuator 460 so that the second support pin 410 of the second substrate holding device 200 does not protrude downward from the second holding surface 230a. This brings the first substrate W1 and the second substrate W2 into contact over their entire surfaces.

（第２の組合せパターン）
　図１９は、第２の組合せパターンにおける貼り合わせ方法を説明するための模式図である。図１９を参照して、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの一方が平面状であり、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの他方が凸形状である場合について説明する。言い換えると、第１基板Ｗ１および第２基板Ｗ２の一方が基板平面形状であり、第１基板Ｗ１および第２基板Ｗ２の他方が基板凸形状である場合について説明する。 (Second combination pattern)
Fig. 19 is a schematic diagram for explaining a bonding method in a second combination pattern. With reference to Fig. 19, a case where one of the surfaces Wa of the first substrate W1 and the second substrate W2 is planar and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex will be explained. In other words, a case where one of the first substrate W1 and the second substrate W2 is a planar substrate shape and the other of the first substrate W1 and the second substrate W2 is a convex substrate shape will be explained.

　図１９に示すように、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの一方が平面状であり、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの他方が凸形状である場合（図１９の上段に示す状態）、制御部１９１は、例えば、第１チャック１３０の第１保持面１３０ａおよび第２チャック２３０の第２保持面２３０ａの一方を平面状に維持し、第１保持面１３０ａおよび第２保持面２３０ａの他方を凸形状にする。ここでは、第１基板Ｗ１の表面Ｗａが凸形状であり、第２基板Ｗ２の表面Ｗａが平面状である例について説明する。制御部１９１は、例えば、第１保持面１３０ａを凸形状に維持し、第２保持面２３０ａを平面状に維持する（図１９の中段に示す状態）。なお、制御部１９１は、第１保持面１３０ａおよび第２保持面２３０ａの両方を凸形状にしてもよい。 19, when one of the surfaces Wa of the first substrate W1 and the second substrate W2 is planar and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex (the state shown in the upper part of FIG. 19), the control unit 191, for example, maintains one of the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 planar and makes the other of the first holding surface 130a and the second holding surface 230a convex. Here, an example will be described in which the surface Wa of the first substrate W1 is convex and the surface Wa of the second substrate W2 is planar. The control unit 191, for example, maintains the first holding surface 130a convex and the second holding surface 230a flat (the state shown in the middle part of FIG. 19). The control unit 191 may make both the first holding surface 130a and the second holding surface 230a convex.

　その後、制御部１９１は、第２移動機構６２０により第２基板保持装置２００を下方向に移動させる。これにより、第１基板Ｗ１の表面Ｗａ（ここでは、上面）と第２基板Ｗ２の表面Ｗａ（ここでは、下面）とが点接触する。 Then, the control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.

　そして、制御部１９１は、第１保持面１３０ａが平面状になるように第１変形機構１７０により第１チャック１３０を変形させながら、第２基板Ｗ２の表面Ｗａ（ここでは、下面）を第１基板Ｗ１の表面Ｗａ（ここでは、上面）に接触させる。この場合、制御部１９１は、駆動機構１７３により第１移動体１７１を第１ベース１２０に対して相対的に下方向に移動させながら、第２移動機構６２０により、同じ速度で、第２基板保持装置２００を下方向に移動させる。これにより、第１基板Ｗ１と第２基板Ｗ２とが全面で接触する（図１９の下段に示す状態）。または、図示しないが、制御部１９１は、例えば、第２保持面２３０ａが凹形状になるように第２チャック２３０を変形させながら、第２基板Ｗ２の表面Ｗａ（ここでは、下面）を第１基板Ｗ１の表面Ｗａ（ここでは、上面）に接触させてもよい。 Then, the control unit 191 causes the first chuck 130 to deform by the first deformation mechanism 170 so that the first holding surface 130a becomes flat, while bringing the surface Wa (here, the lower surface) of the second substrate W2 into contact with the surface Wa (here, the upper surface) of the first substrate W1. In this case, the control unit 191 causes the second substrate holding device 200 to move downward at the same speed by the second moving mechanism 620 while moving the first moving body 171 downward relative to the first base 120 by the drive mechanism 173. As a result, the first substrate W1 and the second substrate W2 come into contact with each other over their entire surfaces (the state shown in the lower part of FIG. 19). Alternatively, although not shown, the control unit 191 may, for example, cause the surface Wa (here, the lower surface) of the second substrate W2 to come into contact with the surface Wa (here, the upper surface) of the first substrate W1 while deforming the second chuck 230 so that the second holding surface 230a becomes concave.

（第３の組合せパターン）
　図２０は、第３の組合せパターンにおける貼り合わせ方法を説明するための模式図である。図２０を参照して、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの一方が平面状であり、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの他方が凹形状である場合について説明する。言い換えると、第１基板Ｗ１および第２基板Ｗ２の一方が基板平面形状であり、第１基板Ｗ１および第２基板Ｗ２の他方が基板凹形状である場合について説明する。 (Third combination pattern)
Fig. 20 is a schematic diagram for explaining a bonding method in a third combination pattern. With reference to Fig. 20, a case where one of the surfaces Wa of the first substrate W1 and the second substrate W2 is planar and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave will be explained. In other words, a case where one of the first substrate W1 and the second substrate W2 is a planar substrate shape and the other of the first substrate W1 and the second substrate W2 is a concave substrate shape will be explained.

　図２０に示すように、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの一方が平面状であり、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの他方が凹形状である場合（図２０の上段に示す状態）、制御部１９１は、例えば、第１チャック１３０の第１保持面１３０ａおよび第２チャック２３０の第２保持面２３０ａの一方を凸形状にし、第１保持面１３０ａおよび第２保持面２３０ａの他方を凹形状にする。ここでは、第１基板Ｗ１の表面Ｗａが凹形状であり、第２基板Ｗ２の表面Ｗａが凸形状である例について説明する。制御部１９１は、例えば、第１保持面１３０ａを凹形状に維持し、第２変形機構２７０により第２保持面２３０ａを凸形状にする（図２０の中段に示す状態）。このとき、例えば、制御部１９１は、第２ベース２２０を固定した状態で、第２変形機構２７０を駆動することにより、第２移動体２７１を第２ベース２２０に対して相対的に下方向に移動させることによって、第２保持面２３０ａを凸形状にする。なお、制御部１９１は、第１保持面１３０ａおよび第２保持面２３０ａの両方を凸形状にしてもよい。ただし、例えば、表面Ｗａが凹形状になっている基板Ｗ（ここでは、第１基板Ｗ１）を、表面Ｗａが凸形状になるように変形させると、基板Ｗにかかる応力が大きくなりやすい。従って、基板Ｗの反り方向が反対方向になるように基板Ｗを変形しないことが好ましい。 As shown in FIG. 20, when one of the surfaces Wa of the first substrate W1 and the second substrate W2 is planar and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave (the state shown in the upper part of FIG. 20), the control unit 191, for example, makes one of the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 convex and makes the other of the first holding surface 130a and the second holding surface 230a concave. Here, an example is described in which the surface Wa of the first substrate W1 is concave and the surface Wa of the second substrate W2 is convex. The control unit 191, for example, maintains the first holding surface 130a in a concave shape and makes the second holding surface 230a convex by the second deformation mechanism 270 (the state shown in the middle part of FIG. 20). At this time, for example, the control unit 191 drives the second deformation mechanism 270 while the second base 220 is fixed, thereby moving the second moving body 271 downward relative to the second base 220, thereby making the second holding surface 230a convex. The control unit 191 may make both the first holding surface 130a and the second holding surface 230a convex. However, for example, if a substrate W (here, the first substrate W1) with a concave surface Wa is deformed so that the surface Wa becomes convex, the stress applied to the substrate W is likely to be large. Therefore, it is preferable not to deform the substrate W so that the warping direction of the substrate W is reversed.

　第１保持面１３０ａおよび第２保持面２３０ａの一方を凸形状にし、第１保持面１３０ａおよび第２保持面２３０ａの他方を凹形状にする場合、制御部１９１は、第１保持面１３０ａおよび第２保持面２３０ａの一方の曲率を、第１保持面１３０ａおよび第２保持面２３０ａの他方の曲率よりも大きくする。本実施形態では、制御部１９１は、第２保持面２３０ａの曲率を第１保持面１３０ａの曲率よりも大きくする。 When one of the first holding surface 130a and the second holding surface 230a is made convex and the other of the first holding surface 130a and the second holding surface 230a is made concave, the control unit 191 makes the curvature of one of the first holding surface 130a and the second holding surface 230a greater than the curvature of the other of the first holding surface 130a and the second holding surface 230a. In this embodiment, the control unit 191 makes the curvature of the second holding surface 230a greater than the curvature of the first holding surface 130a.

　その後、制御部１９１は、第２移動機構６２０により第２基板保持装置２００を下方向に移動させる。これにより、第１基板Ｗ１の表面Ｗａ（ここでは、上面）と第２基板Ｗ２の表面Ｗａ（ここでは、下面）とが点接触する。 Then, the control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.

　そして、制御部１９１は、第２基板Ｗ２に対する吸引力を徐々に低下させる。これにより、第２基板Ｗ２が第２チャック２３０から剥がれるとともに、第２基板Ｗ２の表面Ｗａ（ここでは、下面）が平面状に近づくように変形しながら、第２基板Ｗ２の表面Ｗａの全面が第１基板Ｗ１の表面Ｗａ（ここでは、上面）の全面に密着する（図２０の下段に示す状態）。なお、吸引力の低下のさせ方、および、第１基板Ｗ１と第２基板Ｗ２との接触領域の広がり方は、上記第１の組合せパターンにおける貼り合わせ時と同様である。 Then, the control unit 191 gradually reduces the suction force on the second substrate W2. As a result, the second substrate W2 peels off from the second chuck 230, and the surface Wa (here, the bottom surface) of the second substrate W2 deforms to become closer to a flat surface, and the entire surface Wa of the second substrate W2 comes into close contact with the entire surface Wa (here, the top surface) of the first substrate W1 (the state shown in the lower part of Figure 20). Note that the way in which the suction force is reduced and the way in which the contact area between the first substrate W1 and the second substrate W2 expands are the same as when bonding in the first combination pattern described above.

　また、図示しないが、制御部１９１は、第１基板Ｗ１の表面Ｗａと第２基板Ｗ２の表面Ｗａとが点接触した状態から、第２基板Ｗ２に対する吸引力を低下させず、第２保持面２３０ａが平面状に近づくように第２チャック２３０を変形させてもよい。この場合、制御部１９１は、第２移動体２７１が上下方向に移動しないように、第２ベース２２０を下方向に移動させる。第２移動体２７１が上下方向に移動しないように、第２ベース２２０を下方向に移動させる方法は、上記第１の組合せパターンにおける貼り合わせ時と同様である。これにより、第１基板Ｗ１と第２基板Ｗ２とが全面で接触する。 Also, although not shown, the control unit 191 may deform the second chuck 230 from a state in which the surface Wa of the first substrate W1 and the surface Wa of the second substrate W2 are in point contact, so that the second holding surface 230a approaches a flat surface, without reducing the suction force on the second substrate W2. In this case, the control unit 191 moves the second base 220 downward so that the second moving body 271 does not move in the vertical direction. The method of moving the second base 220 downward so that the second moving body 271 does not move in the vertical direction is the same as that used for bonding in the first combination pattern described above. This brings the first substrate W1 and the second substrate W2 into contact over their entire surfaces.

（第４の組合せパターン）
　図２１は、第４の組合せパターンにおける貼り合わせ方法を説明するための模式図である。図２１を参照して、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの両方が凸形状である場合について説明する。言い換えると、第１基板Ｗ１および第２基板Ｗ２の両方が基板凸形状である場合について説明する。 (Fourth combination pattern)
21 is a schematic diagram for explaining a bonding method in a fourth combination pattern. With reference to FIG. 21, a case where both the surfaces Wa of the first substrate W1 and the second substrate W2 have a convex shape will be explained. In other words, a case where both the first substrate W1 and the second substrate W2 have a convex substrate shape will be explained.

　図２１に示すように、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの両方が凸形状である場合（図２１の上段に示す状態）、制御部１９１は、例えば、第１チャック１３０の第１保持面１３０ａおよび第２チャック２３０の第２保持面２３０ａの両方を凸形状に維持する（図２１の中段に示す状態）。なお、制御部１９１は、例えば、第１保持面１３０ａおよび第２保持面２３０ａの一方を平面状にしてもよい。 21, when both the surfaces Wa of the first substrate W1 and the second substrate W2 have a convex shape (the state shown in the upper part of FIG. 21), the control unit 191, for example, maintains both the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 in a convex shape (the state shown in the middle part of FIG. 21). Note that the control unit 191 may, for example, make one of the first holding surface 130a and the second holding surface 230a flat.

　その後、制御部１９１は、第２移動機構６２０により第２基板保持装置２００を下方向に移動させる。これにより、第１基板Ｗ１の表面Ｗａ（ここでは、上面）と第２基板Ｗ２の表面Ｗａ（ここでは、下面）とが点接触する。 Then, the control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.

　そして、制御部１９１は、例えば、第１保持面１３０ａが平面状になるように第１チャック１３０を変形させるとともに、第２保持面２３０ａが平面状になるように第２チャック２３０を変形させる。この場合、制御部１９１は、駆動機構１７３により第１移動体１７１を第１ベース１２０に対して相対的に下方向に移動させながら、駆動機構２７３により、同じ速度で、第２移動体２７１を下方向に移動させる。このとき、制御部１９１は、第２移動体２７１よりも大きい速度で、第２ベース２２０を下方向に移動させる。つまり、制御部１９１は、駆動機構２７３により第２移動体２７１を第２ベース２２０に対して相対的に上方向に移動させる。また、このとき、制御部１９１は、第２支持ピン４１０が第２保持面２３０ａから下方向に突出しないように、駆動機構１７３により第２支持ピン４１０を第２ベース２２０に対して相対的に上方向に移動させる。これにより、第１基板Ｗ１と第２基板Ｗ２とが全面で接触する（図２１の下段に示す状態）。または、図示しないが、制御部１９１は、例えば、第１保持面１３０ａおよび第２保持面２３０ａのいずれか一方が凹形状になるように第１チャック１３０および第２チャック２３０のいずれか一方を変形させてもよい。これにより、第１基板Ｗ１と第２基板Ｗ２とが全面で接触する。 The control unit 191 then deforms the first chuck 130 so that the first holding surface 130a becomes planar, and deforms the second chuck 230 so that the second holding surface 230a becomes planar. In this case, the control unit 191 causes the drive mechanism 173 to move the first moving body 171 downward relative to the first base 120, while causing the drive mechanism 273 to move the second moving body 271 downward at the same speed. At this time, the control unit 191 moves the second base 220 downward at a speed greater than that of the second moving body 271. In other words, the control unit 191 causes the drive mechanism 273 to move the second moving body 271 upward relative to the second base 220. At this time, the control unit 191 causes the drive mechanism 173 to move the second support pin 410 upward relative to the second base 220 so that the second support pin 410 does not protrude downward from the second holding surface 230a. This causes the first substrate W1 and the second substrate W2 to contact each other over their entire surfaces (the state shown in the lower part of FIG. 21). Alternatively, although not shown, the control unit 191 may deform either the first chuck 130 or the second chuck 230 so that either the first holding surface 130a or the second holding surface 230a has a concave shape. This causes the first substrate W1 and the second substrate W2 to contact each other over their entire surfaces.

（第５の組合せパターン）
　図２２は、第５の組合せパターンにおける貼り合わせ方法を説明するための模式図である。図２２を参照して、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの一方が凸形状であり、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの他方が凹形状である場合について説明する。言い換えると、第１基板Ｗ１および第２基板Ｗ２の一方が基板凸形状であり、第１基板Ｗ１および第２基板Ｗ２の他方が基板凹形状である場合について説明する。 (Fifth combination pattern)
Fig. 22 is a schematic diagram for explaining a bonding method in a fifth combination pattern. With reference to Fig. 22, a case where one of the surfaces Wa of the first substrate W1 and the second substrate W2 has a convex shape and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 has a concave shape will be explained. In other words, a case where one of the first substrate W1 and the second substrate W2 has a convex substrate shape and the other of the first substrate W1 and the second substrate W2 has a concave substrate shape will be explained.

　図２２に示すように、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの一方が凸形状であり、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの他方が凹形状である場合（図２２の上段に示す状態）、制御部１９１は、例えば、第１チャック１３０の第１保持面１３０ａおよび第２チャック２３０の第２保持面２３０ａの一方を凸形状に維持し、第１保持面１３０ａおよび第２保持面２３０ａの他方を凹形状に維持する。ここでは、第１基板Ｗ１の表面Ｗａが凹形状であり、第２基板Ｗ２の表面Ｗａが凸形状である例について説明する。本実施形態では、制御部１９１は、例えば、第１保持面１３０ａを凹形状に維持し、第２保持面２３０ａを凸形状に維持する（図２２の中段に示す状態）。なお、制御部１９１は、例えば、第１保持面１３０ａを平面状にしてもよい。 22, when one of the surfaces Wa of the first substrate W1 and the second substrate W2 is convex and the other of the surfaces Wa of the first substrate W1 and the second substrate W2 is concave (the state shown in the upper part of FIG. 22), the control unit 191, for example, maintains one of the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 in a convex shape and maintains the other of the first holding surface 130a and the second holding surface 230a in a concave shape. Here, an example in which the surface Wa of the first substrate W1 is concave and the surface Wa of the second substrate W2 is convex is described. In this embodiment, the control unit 191, for example, maintains the first holding surface 130a in a concave shape and the second holding surface 230a in a convex shape (the state shown in the middle part of FIG. 22). Note that the control unit 191 may, for example, make the first holding surface 130a flat.

　第１保持面１３０ａおよび第２保持面２３０ａの一方を凸形状にし、第１保持面１３０ａおよび第２保持面２３０ａの他方を凹形状にする場合、制御部１９１は、第１保持面１３０ａおよび第２保持面２３０ａの一方の曲率を、第１保持面１３０ａおよび第２保持面２３０ａの他方の曲率よりも大きくする。本実施形態では、制御部１９１は、第２保持面２３０ａの曲率を第１保持面１３０ａの曲率よりも大きくする。 When one of the first holding surface 130a and the second holding surface 230a is made convex and the other of the first holding surface 130a and the second holding surface 230a is made concave, the control unit 191 makes the curvature of one of the first holding surface 130a and the second holding surface 230a greater than the curvature of the other of the first holding surface 130a and the second holding surface 230a. In this embodiment, the control unit 191 makes the curvature of the second holding surface 230a greater than the curvature of the first holding surface 130a.

　その後、制御部１９１は、第２移動機構６２０により第２基板保持装置２００を下方向に移動させる。これにより、第１基板Ｗ１の表面Ｗａ（ここでは、上面）と第２基板Ｗ２の表面Ｗａ（ここでは、下面）とが点接触する。 Then, the control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.

　そして、制御部１９１は、第２基板Ｗ２に対する吸引力を低下させず、第１変形機構１７０により第２保持面２３０ａが平面状に近づくように第２チャック２３０を変形させる。この場合、制御部１９１は、第２移動体２７１が上下方向に移動しないように、第２ベース２２０を下方向に移動させる。第２移動体２７１が上下方向に移動しないように、第２ベース２２０を下方向に移動させる方法は、上記第１の組合せパターンにおける貼り合わせ時と同様である。これにより、第１基板Ｗ１と第２基板Ｗ２とが全面で接触する。または、図示しないが、制御部１９１は、第１保持面１３０ａの曲率が第２保持面２３０ａの曲率と同じ大きさになるように第１チャック１３０を変形させてもよい。これにより、第１基板Ｗ１と第２基板Ｗ２とが全面で接触する。 Then, the control unit 191 deforms the second chuck 230 by the first deformation mechanism 170 so that the second holding surface 230a approaches a flat surface without reducing the suction force on the second substrate W2. In this case, the control unit 191 moves the second base 220 downward so that the second moving body 271 does not move vertically. The method of moving the second base 220 downward so that the second moving body 271 does not move vertically is the same as that used in bonding in the first combination pattern described above. This brings the first substrate W1 and the second substrate W2 into contact over their entire surfaces. Alternatively, although not shown, the control unit 191 may deform the first chuck 130 so that the curvature of the first holding surface 130a is the same as the curvature of the second holding surface 230a. This brings the first substrate W1 and the second substrate W2 into contact over their entire surfaces.

（第６の組合せパターン）
　図２３は、第６の組合せパターンにおける貼り合わせ方法を説明するための模式図である。図２３を参照して、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの両方が凹形状である場合について説明する。言い換えると、第１基板Ｗ１および第２基板Ｗ２の両方が基板凹形状である場合について説明する。 (Sixth combination pattern)
23 is a schematic diagram for explaining a bonding method in the sixth combination pattern. With reference to FIG. 23, a case where both the surfaces Wa of the first substrate W1 and the second substrate W2 have a concave shape will be explained. In other words, a case where both the first substrate W1 and the second substrate W2 have a concave substrate shape will be explained.

　図２３に示すように、第１基板Ｗ１および第２基板Ｗ２の表面Ｗａの両方が凹形状である場合（図２３の上段に示す状態）、制御部１９１は、例えば、第１チャック１３０の第１保持面１３０ａおよび第２チャック２３０の第２保持面２３０ａの一方を凸形状にし、第１保持面１３０ａおよび第２保持面２３０ａの他方を凹形状に維持する。第１保持面１３０ａおよび第２保持面２３０ａのいずれを凸形状にするかは、適宜決定される。制御部１９１は、例えば、第１基板Ｗ１および第２基板Ｗ２のうち反り量の少ない基板を保持する保持面を、凸形状にしてもよい。または、制御部１９１は、応力による悪影響の小さい方の基板を保持する保持面を、凸形状にしてもよい。本実施形態では、制御部１９１は、例えば、第１保持面１３０ａを凹形状に維持し、第２保持面２３０ａを凸形状にする（図２３の中段に示す状態）。このとき、例えば、制御部１９１は、第２ベース２２０を固定した状態で、第２変形機構２７０を駆動することにより、第２移動体２７１を第２ベース２２０に対して相対的に下方向に移動させることによって、第２保持面２３０ａを凸形状にする。なお、制御部１９１は、例えば、第１保持面１３０ａおよび第２保持面２３０ａの他方を平面状または凸形状にしてもよい。 23, when both the surfaces Wa of the first substrate W1 and the second substrate W2 are concave (the state shown in the upper part of FIG. 23), the control unit 191, for example, makes one of the first holding surface 130a of the first chuck 130 and the second holding surface 230a of the second chuck 230 convex, and maintains the other of the first holding surface 130a and the second holding surface 230a concave. Which of the first holding surface 130a and the second holding surface 230a is made convex is determined appropriately. The control unit 191 may, for example, make the holding surface that holds the substrate with the lesser amount of warping of the first substrate W1 or the second substrate W2 convex. Alternatively, the control unit 191 may make the holding surface that holds the substrate that is less adversely affected by stress convex. In this embodiment, the control unit 191, for example, maintains the first holding surface 130a in a concave shape and makes the second holding surface 230a in a convex shape (the state shown in the middle of FIG. 23). At this time, for example, the control unit 191 drives the second deformation mechanism 270 while the second base 220 is fixed, thereby moving the second moving body 271 downward relative to the second base 220, thereby making the second holding surface 230a in a convex shape. Note that the control unit 191 may, for example, make the other of the first holding surface 130a and the second holding surface 230a flat or convex.

　第１保持面１３０ａおよび第２保持面２３０ａの一方を凸形状にし、第１保持面１３０ａおよび第２保持面２３０ａの他方を凹形状にする場合、制御部１９１は、第１保持面１３０ａおよび第２保持面２３０ａの一方の曲率を、第１保持面１３０ａおよび第２保持面２３０ａの他方の曲率よりも大きくする。本実施形態では、制御部１９１は、第２保持面２３０ａの曲率を第１保持面１３０ａの曲率よりも大きくする。 When one of the first holding surface 130a and the second holding surface 230a is made convex and the other of the first holding surface 130a and the second holding surface 230a is made concave, the control unit 191 makes the curvature of one of the first holding surface 130a and the second holding surface 230a greater than the curvature of the other of the first holding surface 130a and the second holding surface 230a. In this embodiment, the control unit 191 makes the curvature of the second holding surface 230a greater than the curvature of the first holding surface 130a.

　その後、制御部１９１は、第２移動機構６２０により第２基板保持装置２００を下方向に移動させる。これにより、第１基板Ｗ１の表面Ｗａ（ここでは、上面）と第２基板Ｗ２の表面Ｗａ（ここでは、下面）とが点接触する。 Then, the control unit 191 moves the second substrate holding device 200 downward using the second moving mechanism 620. This causes the surface Wa (here, the upper surface) of the first substrate W1 and the surface Wa (here, the lower surface) of the second substrate W2 to come into point contact.

　そして、制御部１９１は、第２基板Ｗ２に対する吸引力を徐々に低下させる。これにより、第２基板Ｗ２が第２チャック２３０から剥がれるとともに、第２基板Ｗ２の表面Ｗａ（ここでは、下面）が平面状に近づくように変形しながら、第２基板Ｗ２の表面Ｗａの全面が第１基板Ｗ１の表面Ｗａ（ここでは、上面）の全面に密着する。（図２３の下段に示す状態）。なお、吸引力の低下のさせ方、および、第１基板Ｗ１と第２基板Ｗ２との接触領域の広がり方は、上記第１の組合せパターンにおける貼り合わせ時と同様である。 Then, the control unit 191 gradually reduces the suction force on the second substrate W2. As a result, the second substrate W2 peels off from the second chuck 230, and the surface Wa (here, the bottom surface) of the second substrate W2 deforms to become closer to a flat surface, and the entire surface Wa of the second substrate W2 comes into close contact with the entire surface Wa (here, the top surface) of the first substrate W1. (The state shown in the lower part of Figure 23.) Note that the way in which the suction force is reduced and the way in which the contact area between the first substrate W1 and the second substrate W2 expands are the same as when bonding the substrates in the first combination pattern described above.

　本実施形態では、上記のように、第１変形機構１７０は、第１保持面１３０ａが凸形状になるように第１チャック１３０を変形させるとともに、第１保持面１３０ａが凹形状になるように第１チャック１３０を変形させる。また、第２変形機構２７０は、第２保持面２３０ａが凸形状になるように第２チャック２３０を変形させるとともに、第２保持面２３０ａが凹形状になるように第２チャック２３０を変形させる。従って、貼り合わせ時に、第１チャック１３０の反り形状と第２チャック２３０の反り形状とを様々に組み合わせることができる。よって、第１基板Ｗ１および第２基板Ｗ２にかかる応力が大きくなることを抑制できる。 In this embodiment, as described above, the first deformation mechanism 170 deforms the first chuck 130 so that the first holding surface 130a has a convex shape, and also deforms the first chuck 130 so that the first holding surface 130a has a concave shape. The second deformation mechanism 270 deforms the second chuck 230 so that the second holding surface 230a has a convex shape, and also deforms the second chuck 230 so that the second holding surface 230a has a concave shape. Therefore, when bonding, the warped shape of the first chuck 130 and the warped shape of the second chuck 230 can be combined in various ways. This makes it possible to suppress the stress applied to the first substrate W1 and the second substrate W2 from becoming too large.

　また、上記のように、第１保持面１３０ａおよび第２保持面２３０ａの一方を凸形状にし、かつ、第１保持面１３０ａおよび第２保持面２３０ａの他方を凹形状にした状態で、第１基板Ｗ１と第２基板Ｗ２とを貼り合わせる。従って、例えば、表面Ｗａが凹形状である第１基板Ｗ１と表面Ｗａが凸形状である第２基板Ｗ２とを貼り合わせる場合に、第１基板Ｗ１の反り方向と第２基板Ｗ２の反り方向とを保持した状態で、第１基板Ｗ１と第２基板Ｗ２とを貼り合わせることができる。よって、第１基板Ｗ１および第２基板Ｗ２にかかる応力が大きくなることを容易に抑制できる。 Furthermore, as described above, the first substrate W1 and the second substrate W2 are bonded together with one of the first holding surface 130a and the second holding surface 230a being convex and the other of the first holding surface 130a and the second holding surface 230a being concave. Therefore, for example, when bonding a first substrate W1 having a concave surface Wa to a second substrate W2 having a convex surface Wa, the first substrate W1 and the second substrate W2 can be bonded together while maintaining the warping direction of the first substrate W1 and the warping direction of the second substrate W2. This makes it easy to prevent the stress applied to the first substrate W1 and the second substrate W2 from becoming large.

　また、上記のように、第１保持面１３０ａおよび第２保持面２３０ａの凸形状における最大曲率は、第１保持面１３０ａおよび第２保持面２３０ａの凹形状における最大曲率よりも大きい。従って、例えば、第１保持面１３０ａを凹形状にし、第２保持面２３０ａを凸形状にする場合（例えば、図２０の中段参照）、第２保持面２３０ａの曲率を第１保持面１３０ａの曲率よりも容易に大きくすることができる。 Furthermore, as described above, the maximum curvature of the convex shape of the first holding surface 130a and the second holding surface 230a is greater than the maximum curvature of the concave shape of the first holding surface 130a and the second holding surface 230a. Therefore, for example, when the first holding surface 130a is made concave and the second holding surface 230a is made convex (for example, see the middle part of Figure 20), the curvature of the second holding surface 230a can be easily made greater than the curvature of the first holding surface 130a.

　第２実施形態のその他の構成、および、その他の効果は、第１実施形態と同様である。 The other configurations and other effects of the second embodiment are the same as those of the first embodiment.

　以上、図面を参照して本発明の実施形態を説明した。ただし、本発明は、上記の実施形態に限られるものではなく、その要旨を逸脱しない範囲で種々の態様において実施することが可能である。また、上記の実施形態に開示される複数の構成要素を適宜組み合わせることによって、種々の発明の形成が可能である。例えば、実施形態に示される全構成要素から幾つかの構成要素を削除してもよい。さらに、異なる実施形態にわたる構成要素を適宜組み合わせてもよい。図面は、理解しやすくするために、それぞれの構成要素を主体に模式的に示しており、図示された各構成要素の厚み、長さ、個数、間隔等は、図面作成の都合上から実際とは異なる場合もある。また、上記の実施形態で示す各構成要素の材質、形状、寸法等は一例であって、特に限定されるものではなく、本発明の効果から実質的に逸脱しない範囲で種々の変更が可能である。 The above describes the embodiments of the present invention with reference to the drawings. However, the present invention is not limited to the above embodiments, and can be implemented in various forms without departing from the gist of the present invention. In addition, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be deleted from all components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings are mainly schematic views of each component to facilitate understanding, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of drawing. In addition, the material, shape, dimensions, etc. of each component shown in the above embodiments are merely examples and are not particularly limited, and various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

　例えば、上記実施形態では、基板Ｗが半導体ウエハである例について説明したが、本発明はこれに限らない。本発明は、基板Ｗとして、半導体ウエハ以外の種々の基板を用いることができる。 For example, in the above embodiment, an example was described in which the substrate W was a semiconductor wafer, but the present invention is not limited to this. The present invention can use various substrates other than semiconductor wafers as the substrate W.

　また、例えば第２実施形態では、第１基板保持装置１００の第１保持面１３０ａおよび第２基板保持装置２００の第２保持面２３０ａの両方が、凸形状に変形し、かつ、凹形状にも変形する例について説明したが、本発明はこれに限らない。例えば、第１基板保持装置１００の第１保持面１３０ａは凸形状に変形し、かつ、凹形状にも変形する一方、第２基板保持装置２００の第２保持面２３０ａは凹形状にならなくてもよい。つまり、第１基板保持装置１００と、第１基板保持装置１００とは異なる構造を有する第２基板保持装置とによって、貼り合わせ装置が構成されていてもよい。ただし、第１基板保持装置１００と、第１基板保持装置１００とは異なる構造を有する第２基板保持装置とによって貼り合わせ装置を構成する場合、第２支持ピン４１０を有しない第１基板保持装置１００は、第２基板保持装置の下方に配置されることが好ましい。言い換えると、第１基板保持装置１００は、２枚の基板のうち下側の基板を保持することが好ましい。 In addition, for example, in the second embodiment, an example was described in which both the first holding surface 130a of the first substrate holding device 100 and the second holding surface 230a of the second substrate holding device 200 are deformed into a convex shape and also into a concave shape, but the present invention is not limited to this. For example, the first holding surface 130a of the first substrate holding device 100 may be deformed into a convex shape and also into a concave shape, while the second holding surface 230a of the second substrate holding device 200 does not have to be concave. In other words, a bonding device may be configured by the first substrate holding device 100 and a second substrate holding device having a structure different from that of the first substrate holding device 100. However, when a bonding device is configured by the first substrate holding device 100 and a second substrate holding device having a structure different from that of the first substrate holding device 100, it is preferable that the first substrate holding device 100, which does not have the second support pin 410, is disposed below the second substrate holding device. In other words, it is preferable for the first substrate holding device 100 to hold the lower substrate of the two substrates.

　また、例えば、上記実施形態では、チャックに固定した移動体を上下方向に移動させることによりチャックを変形させる例について説明したが、本発明はこれに限らない。例えば、チャックとベースとの間に密閉空間を別途設け、密閉空間に圧縮空気を入れたり、密閉空間内を減圧したりすることにより、チャックを変形させてもよい。この場合、変形機構は、例えば、ポンプまたは送風ファンを含む。 In addition, for example, in the above embodiment, an example was described in which the chuck is deformed by moving a movable body fixed to the chuck in the vertical direction, but the present invention is not limited to this. For example, the chuck may be deformed by providing a separate sealed space between the chuck and the base and introducing compressed air into the sealed space or reducing the pressure inside the sealed space. In this case, the deformation mechanism includes, for example, a pump or a blower fan.

　本発明は、基板保持装置、貼り合わせ装置、基板保持方法および貼り合わせ方法に好適に用いられる。 The present invention is suitable for use in substrate holding devices, bonding devices, substrate holding methods, and bonding methods.

１　　　　：貼り合わせ装置
１００　　：基板保持装置、第１基板保持装置
１１０　　：保持機構、第１保持機構
１２０　　：ベース、第１ベース
１２０ｃ　：挿入溝（挿入穴）
１２０ｄ　：内面
１３０　　：チャック、第１チャック
１３０ａ　：保持面、第１保持面
１６０　　：仕切り壁
１６０ａ　：先端面
１７０　　：変形機構、第１変形機構
１７１　　：移動体
１７１ａ　：貫通孔
１９１　　：制御部
２００　　：第２基板保持装置
２１０　　：第２保持機構
２２０　　：第２ベース
２３０　　：第２チャック
２３０ａ　：第２保持面
２７０　　：第２変形機構
４００　　：支持ピン、第１支持ピン
４１０　　：第２支持ピン
Ｓ、Ｓ１、Ｓ２　　　　：空間
Ｓ１２０　：領域
Ｓ１１　　：ステップ（基板を準備する工程）
Ｓ１４　　：ステップ（基板を保持する工程）
Ｓ２１　　：ステップ（第１基板を保持する工程）
Ｓ２２　　：ステップ（第２基板を保持する工程）
Ｓ２４　　：ステップ（貼り合わせる工程）
Ｗ　　　　：基板
Ｗ１　　　：第１基板
Ｗ２　　　：第２基板
Ｗａ　　　：表面
Ｗｂ　　　：裏面（一方面） 1: Bonding apparatus 100: Substrate holding device, first substrate holding device 110: Holding mechanism, first holding mechanism 120: Base, first base 120c: Insertion groove (insertion hole)
120d: inner surface 130: chuck, first chuck 130a: holding surface, first holding surface 160: partition wall 160a: tip surface 170: deformation mechanism, first deformation mechanism 171: moving body 171a: through hole 191: control unit 200: second substrate holding device 210: second holding mechanism 220: second base 230: second chuck 230a: second holding surface 270: second deformation mechanism 400: support pin, first support pin 410: second support pin S, S1, S2: space S120: region S11: step (process of preparing substrate)
S14: Step (substrate holding step)
S21: Step (step of holding the first substrate)
S22: Step (step of holding the second substrate)
S24: Step (bonding process)
W: Substrate W1: First substrate W2: Second substrate Wa: Front surface Wb: Back surface (one side)

Claims (13)

　基板を吸着して保持する保持機構と、
　前記保持機構を変形させる変形機構と
　を備え、
　前記保持機構は、前記基板の一方面を保持する保持面を有するチャックと、前記チャックの前記保持面とは反対側に配置され、前記チャックが取り付けられるベースとを有し、
　前記変形機構は、前記保持面の中央が前記基板側に突出する凸形状、および、前記ベース側に凹む凹形状の両方の形状を前記保持面が実現可能なように前記チャックを変形させる、基板保持装置。 a holding mechanism that adsorbs and holds the substrate;
a deformation mechanism for deforming the holding mechanism,
the holding mechanism includes a chuck having a holding surface that holds one surface of the substrate, and a base that is disposed on an opposite side of the holding surface of the chuck and to which the chuck is attached;
The deformation mechanism deforms the chuck so that the holding surface can have both a convex shape in which the center of the holding surface protrudes toward the substrate, and a concave shape in which the center of the holding surface is recessed toward the base. 　前記変形機構を制御する制御部を備え、
　前記制御部は、
　　前記基板の少なくとも反り方向を示す反り情報を取得し、
　　前記反り情報に基づいて前記保持面が前記凸形状または前記凹形状になるように前記変形機構により前記チャックを変形させ、前記保持機構により前記基板を保持させる、請求項１に記載の基板保持装置。 A control unit for controlling the deformation mechanism is provided.
The control unit is
Obtaining warpage information indicating at least a warpage direction of the substrate;
2 . The substrate holding device according to claim 1 , wherein the deformation mechanism deforms the chuck so that the holding surface has the convex shape or the concave shape based on the warpage information, and the holding mechanism holds the substrate. 　前記基板は、デバイス形成面である表面と、前記表面とは反対側に位置し、前記一方面であり且つ非デバイス形成面である裏面とを有し、
　前記制御部は、前記基板が基板凹形状であることを前記反り情報が示す場合、
　　前記保持面が前記凹形状になるように前記変形機構により前記チャックを変形させ、前記保持機構により前記基板の前記裏面を保持させ、
　前記基板凹形状は、前記表面が前記裏面側に凹み、且つ、前記裏面が前記表面とは反対側に突出する形状を示す、請求項２に記載の基板保持装置。 the substrate has a front surface which is a device formation surface, and a back surface which is located opposite to the front surface, which is the one surface and is a non-device formation surface;
When the warpage information indicates that the substrate has a concave shape, the control unit
The deformation mechanism deforms the chuck so that the holding surface has the concave shape, and the holding mechanism holds the back surface of the substrate;
The substrate holding device according to claim 2 , wherein the concave substrate shape is a shape in which the front surface is recessed toward the back surface and the back surface protrudes toward the opposite side to the front surface. 　前記制御部は、
　　前記基板の前記裏面の中央に前記保持面の中央を点接触させた後、前記変形機構により前記保持面を前記凹形状にし且つ前記保持面の曲率を前記基板の曲率よりも大きくする、請求項３に記載の基板保持装置。 The control unit is
The substrate holding device according to claim 3 , wherein the center of the holding surface is brought into point contact with the center of the back surface of the substrate, and then the deformation mechanism causes the holding surface to assume the concave shape and makes the curvature of the holding surface larger than the curvature of the substrate. 　前記変形機構は、前記チャックの中央に固定される移動体を有し、
　前記移動体は、前記チャックと前記ベースとが対向する対向方向に沿って、前記ベースに対して移動する、請求項１から請求項４のいずれか１項に記載の基板保持装置。 the deformation mechanism has a movable body fixed to a center of the chuck,
5. The substrate holding device according to claim 1, wherein the movable body moves relative to the base along a direction in which the chuck and the base face each other. 　前記移動体は、前記保持面に繋がる貫通孔を有するパイプを含み、
　前記貫通孔は、前記基板の前記一方面を吸引する吸引孔である、請求項５に記載の基板保持装置。 The movable body includes a pipe having a through hole connected to the holding surface,
The substrate holding device according to claim 5 , wherein the through hole is a suction hole for sucking the one surface of the substrate. 　前記チャックと前記ベースとの間の空間を複数の空間に仕切る仕切り壁を備え、
　前記仕切り壁は、前記チャックから前記ベースに向かって延び、
　前記ベースは、前記仕切り壁の一部が挿入される挿入穴を有し、
　前記保持面が平面状になった状態で、
　　前記仕切り壁の一部は、前記挿入穴に挿入されており、
　　前記挿入穴は、前記仕切り壁が前記挿入穴の内部にさらに挿入可能な領域を有し、
　前記領域は、前記仕切り壁の先端面と前記挿入穴の内面とによって規定される、請求項１から請求項６のいずれか１項に記載の基板保持装置。 a partition wall that divides a space between the chuck and the base into a plurality of spaces;
The partition wall extends from the chuck toward the base,
the base has an insertion hole into which a portion of the partition wall is inserted,
With the holding surface in a flat state,
A portion of the partition wall is inserted into the insertion hole,
The insertion hole has a region in which the partition wall can be further inserted into the insertion hole,
The substrate holding device according to claim 1 , wherein the region is defined by a tip surface of the partition wall and an inner surface of the insertion hole. 　第１基板と第２基板とを貼り合わせる貼り合わせ装置であって、
　前記第１基板を保持する第１基板保持装置と、
　前記第１基板保持装置に対向して配置され、前記第２基板を保持する第２基板保持装置と
　を備え、
　前記第１基板保持装置は、
　　前記第１基板を吸着して保持する第１保持機構と、
　　前記第１保持機構を変形させる第１変形機構と
　を有し、
　前記第１保持機構は、前記第１基板の一方面を保持する第１保持面を有する第１チャックと、前記第１チャックの前記第１保持面とは反対側に配置され、前記第１チャックが取り付けられる第１ベースとを有し、
　前記第１変形機構は、前記第１保持面の中央が前記第１基板側に突出する凸形状、および、前記第１ベース側に凹む凹形状の両方の形状を前記第１保持面が実現可能なように前記第１チャックを変形させる、貼り合わせ装置。 A bonding apparatus for bonding a first substrate and a second substrate,
a first substrate holding device that holds the first substrate;
a second substrate holding device disposed opposite the first substrate holding device and configured to hold the second substrate;
The first substrate holding device is
a first holding mechanism that adsorbs and holds the first substrate;
a first deformation mechanism that deforms the first holding mechanism,
the first holding mechanism includes a first chuck having a first holding surface that holds one surface of the first substrate, and a first base that is disposed on an opposite side of the first chuck from the first holding surface and to which the first chuck is attached;
The first deformation mechanism deforms the first chuck so that the first holding surface can realize both a convex shape in which the center of the first holding surface protrudes toward the first substrate side, and a concave shape in which the center of the first holding surface is recessed toward the first base side. 　前記第２基板保持装置は、
　　前記第２基板を吸着して保持する第２保持機構と、
　　前記第２保持機構を変形させる第２変形機構と
　を有し、
　前記第２保持機構は、前記第２基板の一方面を保持する第２保持面を有する第２チャックと、前記第２チャックの前記第２保持面とは反対側に配置され、前記第２チャックが取り付けられる第２ベースとを有し、
　前記第２変形機構は、前記第２保持面の中央が前記第２基板側に突出する凸形状、および、前記第２ベース側に凹む凹形状の両方の形状を前記第２保持面が実現可能なように前記第２チャックを変形させる、請求項８に記載の貼り合わせ装置。 The second substrate holding device is
a second holding mechanism that adsorbs and holds the second substrate;
a second deformation mechanism that deforms the second holding mechanism,
the second holding mechanism includes a second chuck having a second holding surface that holds one surface of the second substrate, and a second base that is disposed on an opposite side of the second holding surface of the second chuck and to which the second chuck is attached;
9. The bonding apparatus according to claim 8, wherein the second deformation mechanism deforms the second chuck so that the second holding surface can realize both a convex shape in which the center of the second holding surface protrudes toward the second substrate side, and a concave shape in which the center of the second holding surface is recessed toward the second base side. 　前記第１基板保持装置および前記第２基板保持装置は、前記第１保持面および前記第２保持面の一方を前記凸形状にし、かつ、前記第１保持面および前記第２保持面の他方を前記凹形状にした状態で、前記第１基板と前記第２基板とを貼り合わせる、請求項９に記載の貼り合わせ装置。 The bonding device according to claim 9, wherein the first substrate holding device and the second substrate holding device bond the first substrate and the second substrate together while one of the first holding surface and the second holding surface is in the convex shape and the other of the first holding surface and the second holding surface is in the concave shape. 　前記第１保持面の前記凸形状における最大曲率は、前記第１保持面の前記凹形状における最大曲率よりも大きい、請求項８から請求項１０のいずれか１項に記載の貼り合わせ装置。 The bonding device according to any one of claims 8 to 10, wherein the maximum curvature of the convex shape of the first holding surface is greater than the maximum curvature of the concave shape of the first holding surface. 　基板を準備する工程と、
　前記基板の一方面を吸着して保持する保持面が凹形状になるように、前記保持面を有するチャックを変形させて、前記チャックにより前記基板を保持する工程と
　を含み、
　前記凹形状は、前記保持面の中央が前記基板とは反対側に凹む形状を示す、基板保持方法。 providing a substrate;
and deforming a chuck having a holding surface that adsorbs and holds one surface of the substrate so that the holding surface has a concave shape, thereby holding the substrate with the chuck,
A substrate holding method, wherein the concave shape indicates a shape in which the center of the holding surface is concave toward the opposite side to the substrate. 　第１基板の一方面を吸着して保持する第１保持面が凹形状になるように、前記第１保持面を有する第１チャックを変形させて、前記第１チャックにより前記第１基板を保持する工程と、
　第２チャックの第２保持面により第２基板の一方面を吸着して保持する工程と、
　前記第１保持面を前記凹形状にし、かつ、前記第１保持面に対向する前記第２保持面を凸形状にした状態で、前記第１基板と前記第２基板とを貼り合わせる工程と
　を含み、
　前記第１保持面の前記凹形状は、前記第１保持面の中央が前記第１基板とは反対側に凹む形状を示し、
　前記第２保持面の前記凸形状は、前記第２保持面の中央が前記第２基板側に突出する形状を示す、貼り合わせ方法。 a step of deforming a first chuck having a first holding surface that adsorbs and holds one side of a first substrate so that the first holding surface has a concave shape, and holding the first substrate with the first chuck;
a step of suction-holding one surface of a second substrate by a second holding surface of a second chuck;
and bonding the first substrate and the second substrate together in a state in which the first holding surface is formed in the concave shape and the second holding surface opposed to the first holding surface is formed in a convex shape,
the concave shape of the first holding surface indicates a shape in which a center of the first holding surface is concave toward an opposite side to the first substrate,
The convex shape of the second holding surface indicates a shape in which a center of the second holding surface protrudes toward the second substrate.
PCT/JP2024/024878 2023-09-22 2024-07-10 Wafer holding device, bonding device, wafer holding method, and bonding method Pending WO2025062798A1 (en)

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WO2012147343A1 (en) * 2011-04-26 2012-11-01 株式会社ニコン Substrate bonding device, substrate holding device, substrate bonding method, substrate holding method, multilayered semiconductor device, and overlapped substrate
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