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WO2025056433A1 - Dispositif et procédé pour influencer individuellement la croissance de couche d'une couche déposée sur un substrat dans un réacteur cvd recevant une pluralité de substrats - Google Patents

Dispositif et procédé pour influencer individuellement la croissance de couche d'une couche déposée sur un substrat dans un réacteur cvd recevant une pluralité de substrats Download PDF

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Publication number
WO2025056433A1
WO2025056433A1 PCT/EP2024/074988 EP2024074988W WO2025056433A1 WO 2025056433 A1 WO2025056433 A1 WO 2025056433A1 EP 2024074988 W EP2024074988 W EP 2024074988W WO 2025056433 A1 WO2025056433 A1 WO 2025056433A1
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gas
substrates
process chamber
process gas
gas inlet
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German (de)
English (en)
Inventor
Jared Lee HOLZWARTH
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Aixtron SE
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Aixtron SE
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the invention relates to a method for the simultaneous treatment of a plurality of substrates arranged in a process chamber in a particularly circular arrangement around a gas inlet element, wherein during the feeding of a first process gas through first gas outlet openings of the gas inlet element, the substrates or the gas inlet element are rotated at a speed about an axis of rotation running through the gas inlet element, wherein a second process gas is fed into the process chamber through at least one second gas outlet opening arranged upstream of the substrates with respect to the flow of the first process gas, wherein the first and second process gases flow in the process chamber in a flow direction over the substrates and there cause the growth or the change in a layer composition of a respective layer on the substrates.
  • the invention further relates to a device for carrying out a method with a gas inlet element arranged in a process chamber with first gas outlet openings for the outlet of a first process gas into the process chamber, with a susceptor having a plurality of storage spaces for substrates arranged in a circular arrangement around the gas inlet element, wherein the susceptor or the gas inlet element can be driven in rotation by a rotary drive at a speed about a rotational axis running in particular through the gas inlet element, and with at least one second gas outlet opening arranged upstream of the storage locations with respect to the flow of the first process gas for the outlet of a second process gas into the process chamber.
  • DE 10 2019104433 A1 describes a device and a method for depositing layers on substrates, each of which is arranged on a substrate holder.
  • the substrate holders are arranged in a uniform circumferential distribution on a susceptor that is rotated about a rotational axis such that the substrates rotate at a predetermined speed around a gas inlet element arranged in the center of the susceptor.
  • the gas inlet element has zones arranged one above the other, each of which has gas outlet openings arranged evenly over the circumference of the gas inlet element. Different process gases are fed into the process chamber of the device through these gas outlet openings.
  • Supply lines are located below the susceptor, through which a tempering gas can be fed between a heating device and the susceptor in order to locally influence the heat flow from the heating device to the susceptor.
  • the tempering gas can be fed into a selected outlet sector in a pulsed manner in order to locally influence the temperature of individual sectors of the susceptor.
  • US 2014/0087567 A1 discloses a gas inlet device arranged above a rotating susceptor supporting substrates, with a gas outlet surface divided into several sectors. Different process gases are fed into the process chamber via a sector each limited to an angular range around the rotational axis of the susceptor.
  • US 2018/0269 078 A1 also describes a gas outlet surface of a gas inlet device divided into several sectors and arranged above a rotating susceptor. The feed of the gases through the various sectors is coordinated with the rotation of the susceptor.
  • the layer composition, the growth rate or the dopant concentration within the layer varies despite this measure; for example, the values of the growth rate, the layer composition or the dopant concentration in the center of the substrate may differ from the values measured at the edge of the substrate.
  • DE 102023 100 077 describes a CVD device similar to the aforementioned device, wherein gas outlet openings are arranged in a pre-flow zone between the gas inlet element and the substrates, through which gas outlet openings a second process gas influencing the layer composition is fed into the process chamber in such a way that it flows only over a partial area of the substrate, in order to thereby adapt the value measured in the center to the value measured at the edge of the substrate.
  • the second process gas With the second process gas, a higher partial pressure of a process gas causing the dopant incorporation can be achieved at the edge. but it is also possible to use the second process gas to reduce the partial pressure of this process gas if it leads to dilution.
  • the invention is based on the object of taking measures to standardize the layer composition, the growth rate and/or the dopant incorporation of substrates treated simultaneously in a common process chamber.
  • the method is in particular a method for depositing layers on the substrates and preferably a method for depositing SiC layers on SiC substrates or Si substrates or on layers that have already been deposited on substrates.
  • the method is also suitable for depositing III-V layers on suitable substrates.
  • the method is preferably carried out in an apparatus comprising a CVD reactor with a process chamber.
  • the floor of the process chamber can be formed by a susceptor.
  • the susceptor can be heated by a heating device.
  • a heating device can be a resistance heater, an RF heater, or a lamp heater.
  • the susceptor can be heated to a process temperature using a heating device.
  • a first process gas is fed into the process chamber via a gas inlet element forming the center of the process chamber.
  • the first process gas can contain several reactive gases that decompose or react with one another in the process chamber. Decomposition products of the reactive gases are deposited on the surface of the substrate, forming, in particular, crystalline or monocrystalline layers.
  • the first process gas can also contain a dopant with which the deposited layer can be doped.
  • a first gas supply line is provided, into which at least one reactive gas is fed from a gas mixing system having at least one first gas source.
  • a mixture of several reactive gases for example a silicon-containing gas and a carbon-containing gas, for example C2H6 and SiHe together with H2, is fed through the first gas supply line.
  • the first process gas can also contain a dopant, for example a nitrogen-containing gas, for example N2 or NH3.
  • a rotational axis extends through the gas inlet element and in particular through the center of a gas inlet element having a cylindrical outer surface.
  • the susceptor can be rotated about this rotational axis using a rotary drive. With the rotary drive, the susceptor can be rotated at a predetermined speed about the gas inlet element, which is stationary relative to the housing of the CVD reactor.
  • the gas inlet element can be rotated about a rotational axis using a rotary drive.
  • the susceptor cannot be rotated in this variant.
  • the susceptor is also rotated about the same rotational axis, in particular in an opposite direction.
  • the storage locations are formed by substrate holders, which are circular disk-shaped bodies that are driven to rotate about their axis during the deposition of the layer.
  • the Substrate holders are placed in storage pockets of a broad side surface of the susceptor facing the process chamber. Purge gases can be fed into the bottom of the storage pockets, forming a gas cushion on which the substrate holder rests. The purge gases can cause the substrate holders to rotate.
  • the process gas fed into the process chamber decomposes pyrolytically in the process chamber.
  • the decomposition products for example Si and C or reaction products containing these elements, diffuse to the substrate surface.
  • the gas phase directly above the substrate surface becomes depleted.
  • the substrate holder carrying one or more substrates is rotated as described above. Despite this measure, inhomogeneity in the layer thickness, layer composition, or local dopant concentration within the layer is often unavoidable.
  • the layer thickness, layer composition, or dopant concentration within the layer can vary in a radial direction.
  • the value of the layer thickness, the layer composition or the dopant concentration can be different at the edge of the layer from the value in the middle of the layer. It is also observed that the values of different substrates differ from one another.
  • a second process gas is fed into the process chamber into an outlet sector limited to an angular range around the axis of rotation.
  • the outlet sector is preferably selected such that the second process gas flow emerging from second gas outlet openings only flows over one storage location or one substrate or only over a partial area of a substrate.
  • the second process gas is varied and, in particular, fed into the process chamber in pulsed form.
  • the pulse length is dimensioned such that the quantity of the second process gas fed in during the pulse only flows over the surface of a substrate or even flows only over a partial surface of a substrate.
  • the second process gas flow is a time-varying process gas flow. The time variation of the second process gas flow can repeat periodically, synchronized with the rotational speed of the susceptor or the gas inlet element around its axis.
  • the composition of the second process gas can be changed between two successive pulses in such a way that two substrates lying one behind the other in the circumferential direction are exposed to a different gas phase composition with successive gas pulses, so that the layer growth, the layer composition, or the dopant incorporation on different substrates can be influenced differently. If the exit sector is smaller than the sector of the process chamber determined by the diameter of the substrate around the axis of rotation, then only a partial area, for example the edge area of a substrate, can be specifically influenced by the second process gas.
  • the second process gas can contain the same reactive gases as the first process gas, although in this case at least one of these reactive gases preferably has a different partial pressure than the same reactive gas in the first process gas.
  • the second process gas can contain a dopant with a higher partial pressure.
  • the second process gas it is also possible for the second process gas to contain no dopant or no reactive gas at all, but merely a diluent gas, so that the pulsed introduction of the second process gas, limited to an exit sector, locally leads to reduced growth or reduced dopant incorporation.
  • the second process gas has a higher partial pressure of the reactive gas, the value of the growth rate, the layer composition, or the dopant incorporation can be locally increased by the pulsed introduction of the second process gas, limited to an exit sector.
  • the first gas outlet openings are arranged uniformly distributed in the circumferential direction over the circumferential surface of the gas inlet element.
  • the gas inlet element can form a plurality of zones arranged vertically one above the other, each having gas distribution chambers into which different process gases or reactive gases are fed.
  • the first process gas exits the circumferential surface of the gas inlet element uniformly in the circumferential direction, relative to the axis of rotation, and the angular range of the exit sector corresponds at most to the angular distance between two substrates lying next to one another in the circumferential direction around the axis of rotation.
  • the pulse length can correspond at most to the duration in which a region of a susceptor carrying the substrates, corresponding to the angular distance, passes through the exit sector.
  • the pulse length can be shorter than the duration in which a region of the susceptor corresponding to the diameter of a substrate passes through the exit sector.
  • the angular range of the exit sector can also be smaller than the angular range of a sector determined by the diameter of a substrate.
  • the effect of the second process gas can be limited to a partial area of the substrate. It can further be provided that the pulse frequency of the pulses with which the second process gas is fed into the process chamber is selected such that only one gas pulse flows over one substrate at a time.
  • the pulse frequency can then correspond to the product of the rotational speed and the number of substrates arranged in a uniform circumferential distribution around the gas inlet element.
  • the second process gas can vary with this pulse frequency.
  • Each pulse can thus have a different gas composition, so that the growth rate, the layer composition or the substance concentration of the simultaneously deposited layers can be individually influenced.
  • the second process gas flow can also change continuously, with a temporally changing flow pattern being periodic with the rotational speed of the susceptor.
  • the layer composition can be be influenced if the layer consists of more than two components, for example three elements, such as GaAlN or the like.
  • the gas inlet element has a plurality of second gas outlet openings through which different second process gases are fed into the process chamber in an outlet sector limited to an angular range around the axis of rotation and varied in a manner synchronized with the rotational speed.
  • the different second gas outlet openings can be arranged side by side in the circumferential direction. However, they can also be arranged one above the other, offset in the direction of the axis of rotation of the susceptor.
  • Each of the different second gas outlet openings can be connected to an associated second gas supply line, each of which is connected via mass flow controllers and valves to a gas supply for a different second process gas.
  • Groups of individual gas inlet areas can thus be provided, wherein the gas inlets can be individually controlled and different gases are fed into the process chamber through the gas inlets. Different gases can also be fed into the process chamber at different times. For example, it is possible to feed a dopant into the process chamber through a second gas outlet opening in order to change the dopant concentration in a defined circumferential section for a limited period of time.
  • This gas outlet opening can, for example, be arranged between two further second gas outlet openings, through each of which a diluent gas, for example an inert gas, is fed in. Gas flows can also be focused by means of several second gas outlet openings arranged directly next to one another.
  • a profile of the gas flow can also be set, for example by providing or feeding different process gas concentrations through different gas outlet openings arranged directly next to one another.
  • the several second Gas outlet openings can also be arranged offset at a uniform angular distribution around the rotational axis of the susceptor or the gas inlet element; for example, the second gas outlet openings can be arranged offset by an angle of 120°.
  • Such a multiple arrangement of second gas outlet openings enables better homogeneity and better wafer-to-wafer control of the dopant incorporation or crystal growth.
  • first gas outlet openings through which a process gas is fed into the process chamber at a uniform circumferential distribution around a rotationally symmetrical gas inlet element, at a uniform spacing on the gas outlet surface of the gas inlet element.
  • the one or more second gas outlet openings are then preferably arranged in the spaces between the uniformly distributed first gas outlet openings.
  • the invention also provides for a second gas outlet opening to be arranged where a first gas outlet opening would otherwise be arranged.
  • the gas outlet opening is arranged radially outside the gas inlet element.
  • the gas inlet element can be arranged in the center of a process chamber.
  • the process chamber then surrounds the gas inlet element in a circle.
  • a gas supply line for example a pipe, can protrude into the process chamber radially outside the gas inlet element.
  • the pipe has an opening that forms the second gas outlet opening through which the second process gas can be fed into the process chamber.
  • a pre-flow zone extends between the gas inlet element and a storage location for one or more substrates, through which the process gas leaving the gas inlet element flows through the process chamber before reaching the storage location for the substrates.
  • the second gas outlet opening is arranged directly in front of the storage location for the substrate. For example, A tube extends through a process chamber ceiling into the process chamber, which has the second gas outlet opening at its end. The second gas outlet opening is then spaced radially outward from the gas inlet element by the distance of a pre-flow zone.
  • the device can have a valve arrangement that can be controlled by a control device or regulating device.
  • the valve arrangement can have one or more mass flow controllers and at least one switching valve.
  • the switching valve With the switching valve, the second process gas can be switched from a Vent outlet, through which the second process gas is guided past the gas inlet element, to a Run outlet, so that the second process gas flows into a gas supply line that opens into a gas distribution chamber, from which the second process gas can flow into the process chamber from the one or more second gas outlet openings.
  • a gas flow having the same gas composition as the first process gas can be fed into the process chamber alternately with a gas flow having a different gas composition.
  • the gas composition of the second process gas can be predetermined using a mass flow controller.
  • a measuring device which can have a sensor.
  • the sensor can be an optical sensor.
  • the measuring device can be used to determine the layer thickness, the layer composition, and/or the dopant concentration of the layer.
  • the measuring device subsequently measures the values of the layers of each of the substrates.
  • a control device receives this value as an input value in order to control it against a target value.
  • the control device adjusts the gas composition of the second process gas individually for each of the substrates.
  • This method ensures that the values of the simultaneously deposited layers differ minimally from a target value, since the control device is configured to individually vary the value of the layer thickness, layer composition, and/or dopant concentration of the layer of each substrate based on a measured value by varying the composition of the second process gas in order to thereby adjust the value against a target value.
  • Fig. 1 shows a sectional view schematically of a CVD reactor 1 of a first embodiment of the invention
  • Fig. 2 shows the section along the line II-II in Figure 1
  • FIG. 3 enlarges section III-III in Figure 2
  • Fig. 5 shows a second embodiment in a representation according to Figure 1
  • Fig. 6 shows a third embodiment according to a section of the line VI-VI in Figure 5
  • FIG. 7 the view VII in Figure 6, Fig. 8 shows the section along line VIII in Figure 6,
  • Fig. 9 is a representation according to Figure 8 of a fourth embodiment
  • Fig. 10 schematically shows a valve arrangement of a fifth embodiment
  • Fig. 11 is a representation according to Figure 6 of a sixth embodiment
  • Fig. 12 the sixth embodiment in the direction of arrow XII in Figure 11
  • Fig. 13 the section along the line XIII-XIII in Figure 11
  • Fig. 16 shows a seventh embodiment in a representation according to Fig. 12, Fig. 17 shows the section along the line XVII-XVII in Fig. 16,
  • Fig. 19 shows an eighth embodiment of the invention in a representation according to Figure 6, and Fig. 20 shows a ninth embodiment of the invention in a representation according to,
  • Fig. 21 shows a tenth embodiment of the invention similar to the fourth embodiment shown in Fig. 9, but with the second gas outlet opening 5 arranged downstream of a lead time 31.
  • a CVD reactor 1 has a gas-tight housing in which a process chamber 2 is located.
  • the process chamber 2 is bounded at the top by a process chamber ceiling 20 and at the bottom by a susceptor 16.
  • the process chamber ceiling 20 and the susceptor 16 can be made of coated graphite.
  • a heating device 19 with which the susceptor 16 and the process chamber 2 located above it can be heated.
  • the susceptor 16 can be driven in rotation about a rotation axis D at a predetermined speed by a rotary drive 29.
  • the susceptor 16 carries a plurality of substrate holders 17 arranged in a circular arrangement around the rotation axis D, each of which can form a storage space for one or more substrates.
  • each substrate holder 17 carries a substrate 15.
  • the substrate holders 17 are located in pockets in the broad side surface of the susceptor 16 and can be surrounded by gas cushions (not shown). supported and driven to rotate about its axis of symmetry.
  • the heating device 19 can be an RF coil that generates eddy currents within the susceptor 16 to heat it.
  • a gas outlet element 18 is arranged around the circumferential edge of the susceptor 16, which extends on a circular line, with which gas fed into the process chamber 2 or decomposition products can be pumped out of the process chamber 2 by means of a vacuum pump (not shown).
  • a gas inlet element 3 which is stationary relative to the housing of the CVD reactor 1 and can be made of quartz or another suitable material.
  • At least two gas supply lines 8, 9 open into the gas inlet element 3 in order to feed a first process gas into the gas inlet element 3 through the gas supply line 8 into a gas distribution chamber 6.
  • the gas inlet element 3 has a circumferential surface 3' extending on an outer surface of a circular cylinder, which has a plurality of first gas outlet openings 4 through which the first process gas can flow into the process chamber 2.
  • the first process gas flows through the process chamber 2 essentially in a radial direction.
  • Figure 2 designates the flow direction as S.
  • a gas source arrangement which has at least a first gas source 10 and at least a second gas source 12.
  • the mass flow of the first process gas or a second process gas can be adjusted by means of mass flow controllers 11, 13.
  • the first process gas can, for example, contain reactive gases with which a layer can be deposited on the substrates 15.
  • the reactive gases can be silane or disilane, as well as methane or ethane, in order to deposit a SiC layer.
  • the first process gas can contain a dopant, for example nitrogen or ammonia or another gas containing an element of main group V.
  • the first gas outlet openings 4 are arranged on the circumferential surface 3' of the gas inlet element 3 in such a way that a gas flow that is as homogeneous as possible emerges from the gas inlet element 3 in the radial direction and flows over the substrates 15.
  • the composition of the second process gas differs from the composition of the first process gas in such a way that in the regions of the substrates 15 in which the second process gas acts on the substrate, the layer thickness, the layer composition, or the dopant incorporation changes differently than in the regions in which the second process gas does not act on the substrate.
  • the switching valve 14 the gas pulses can be specifically fed into the process chamber 2 such that they only flow over partial regions of a single substrate 15 or only over a single substrate 15.
  • the mass flow controller 13 which is arranged between the second gas source 12 and the switching valve 14, the composition of the second process gas can be changed so quickly that successive pulses flowing over successive substrates 15 in the direction of rotation differ from one another. have different compositions, so that the growth rate, the layer composition or the dopant incorporation can be specifically influenced in relation to the substrate.
  • a measuring device 26 which in particular has an optical sensor with which the layer thickness, the layer composition, or the dopant concentration of the layer can be measured along an optical path 27, which can extend through the process chamber ceiling 20.
  • the value thus individually measured for each substrate 15 passing beneath the sensor of the measuring device 26 can be used to control the mass flow controller 13 in order to vary the partial pressure of the reactive gas contained in the second process gas such that the measured value is regulated towards a desired value. In this way, it is possible to avoid or reduce deviations in layer thicknesses, layer compositions, or substance concentrations from substrate to substrate that would otherwise occur.
  • Figure 2 shows an embodiment in which the exit sector a extends over a smaller angular range than the angular range ß defined by the diameter of a substrate 15.
  • the second process gas can be increased only in an edge region by ensuring that the gas pulse fed into this exit sector a flows only over the edge region of the substrate 15 and has an increased or decreased concentration of the reactive gas causing the dopant incorporation.
  • the second process gas is fed into a second gas distribution chamber 7, which, like the first gas distribution chamber 6, is located within the gas inlet element 3.
  • the gas distribution chambers 6, 7 are separated from one another by a partition wall 21.
  • the first gas outlet openings 4 originate from the first gas distribution chamber.
  • Second gas outlet openings 5 originate from the second gas distribution chamber 7, which extend only over a limited circumferential angle, so that the outlet sector a can be defined by the arrangement of the second gas outlet openings 5.
  • the second process gas is fed into the process chamber 2 through a gas outlet opening 5, which is arranged within the process chamber ceiling 20.
  • the embodiment shown in Figure 9 differs essentially from the embodiment shown in Figures 1 to 4 and 6 to 8 in that the supply line 9 extends as a pipe through the process chamber ceiling 20 and opens into the process chamber 2 with a second gas outlet opening 5.
  • FIG 10 schematically shows a valve arrangement.
  • a first process gas can be provided using the mass flow controllers 25.
  • the first process gas can comprise two reactive gases forming the layer and a reactive gas containing a dopant. This gas mixture is fed into the first gas distribution chamber 6 using a first mass flow controller 11. However, the reactive gases can also be fed separately into the multiple gas distribution chambers 6, 6', 6" shown in Figure 8.
  • the sixth embodiment shown in Figures 11 to 15 essentially corresponds to the embodiment shown in Figures 6 to 8.
  • the gas inlet element 3 has three different second gas distribution chambers 7, 7', 7" formed by partition walls 21, which are arranged circumferentially offset from one another. From each of the three second gas distribution chambers 7, 7', 7" emerges a second gas outlet opening 5, 5', 5", through which different gases, for example a reactive gas and an inert gas or different reactive gases, even in different concentrations, can be fed into the process chamber 2.
  • the feeding of these further second gases also takes place in a temporally varied and pulsed manner, as previously described.
  • Each of the further two gas distribution chambers 7, 7', 7" is connected to an individual second gas supply line 9, 9', 9" with, for example, a mass flow controller and a gas source.
  • second gas sources 12 can be provided, with which, using mass flow controller 13 and switching valves 14, an individual second gas flow is provided, which exits the gas inlet element 3 at different locations.
  • mass flow controller 13 and switching valves 14 an individual second gas flow is provided, which exits the gas inlet element 3 at different locations.
  • a pulsed gas flow can be fed into the process chamber through each of the second gas outlet openings 5, 5', 5", wherein the pulses can be generated at different times or at the same time. This makes it possible, for example, to focus a "dopant beam".
  • the gas outlet openings 5, 5', 5" are arranged vertically one above the other and are offset in the circumferential direction. However, it is also possible to arrange the plurality of second gas outlet openings 5, 5', 5" directly vertically one above the other.
  • Second gas distribution chambers 7, 7" formed by tubes, extend within the gas distribution chambers 6, 6' and are each connected to an individual gas source via second gas supply lines 9, 9', 9".
  • Each second gas distribution chamber 7, 7" is connected to one of the second gas outlet openings 5, 5', 5", located next to one another in the circumferential direction.
  • the tubes forming the second gas distribution chambers 7, 7" can also run within the gas inlet member 3 in such a way that two or more second gas outlet openings 5, 5', 5" are arranged vertically one above the other at a circumferential position.
  • the eighth embodiment shown in Figure 19 shows a variant of the embodiment shown in Figures 6 to 7, in which three second gas distribution chambers 7, 7', 7" are arranged in a uniform circumferential distribution around the center of the gas inlet element 3. The advantage of such a multiple arrangement is better homogeneity of the layers deposited on the substrates and enables better wafer-to-wafer control of the layer properties.
  • different second process gases are fed into the process chamber through the different second gas outlet openings 5, 5', 5" in a different temporal pulse sequence or variation.
  • the feed is pulsed or varied in the manner described above.
  • first gas outlet openings 4 are evenly distributed over the entire circumferential surface of the gas inlet element 3, i.e., on the gas outlet surface formed by the gas inlet element 3. Adjacent first gas outlet openings are thus each equidistant from one another. An intermediate surface 30 thus extends between adjacent first gas outlet openings 4, with all intermediate surfaces 30 being substantially identical in design. According to the invention, a second gas outlet opening 5 is located in at least one of these intermediate surfaces 30. Figure 20 shows such an embodiment.
  • the second gas outlet opening 5 is arranged downstream of the gas inlet element 3.
  • the gas inlet element gan 3 can be arranged in the center of a process chamber 2.
  • the process chamber then surrounds the gas inlet element 3, as shown, for example, in Figure 21.
  • An annular pre-flow zone 31 is arranged around the essentially cylindrical gas inlet element 3, over which the first process gas exiting from the first gas outlet openings flows.
  • the first process gas can heat up. This occurs through heat transfer from the susceptor 16 to the gas.
  • the second gas outlet opening 5 is arranged here at the downstream end of the feed zone 31.
  • the second gas outlet opening 5 is located directly upstream of a storage location supporting a substrate 15. The flow of the second process gas exiting the second gas outlet opening 5 thus extends over a very narrow angular range.
  • second gas outlet opening In the exemplary embodiment, only one second gas outlet opening is provided. However, several second gas outlet openings 5 may also be provided, each arranged directly upstream of a storage location for a substrate 15.
  • a tube protrudes from the process chamber ceiling 20 into the process chamber 2, into which a second process gas flow is fed by means not illustrated.
  • the tube extends to immediately above the upper side of the susceptor 16 facing the process chamber 2.
  • the mouth of the tube which forms the second gas outlet opening 5, points in a downstream direction relative to the first process gas flow.
  • the mouth 5 points approximately toward the center of the storage location 17.
  • the second gas outlet opening 5 is located approximately at the level of the lowest gas distribution chamber 6 ZZ .
  • the gas inlet element 3 can also be driven in rotation about the rotation axis D.
  • the susceptor 16 can then be stationary relative to the housing 1 or can also be rotated about the same rotation axis D.
  • the gas inlet element 6 and the susceptor 16 can be driven in rotation in opposite directions.
  • the second gas distribution chamber 7, 7', 7" orbits the rotation axis D.
  • all gas supply lines 8, 8', 8 ZZ , 9, 9 Z , 9 ZZ can be nested within each other, wherein the axis of rotation D can run through the innermost tube of the nested tubes of the supply lines.
  • a method which is characterized in that the second process gas is fed into the process chamber 2 in an outlet sector a which is limited to an angular range around the axis of rotation D and varies synchronized with the rotational speed.
  • a method which is characterized in that during the feeding of the second process gas a value of the growth rate, the layer composition and/or the dopant incorporation is measured with a sensor 26 and the mass flow of the second process gas is varied with a control device 28 in order to achieve a desired value.
  • a method which is characterized in that a plurality of second gas outlet openings 5, 5', 5" are provided vertically one above the other and/or next to one another in the circumferential direction, through which a different second process gas or process gases with different temporal variation are fed into the process chamber 2, wherein the plurality of second gas outlet openings 5, 5', 5" are arranged so as to be limited to an outlet sector a which is limited around the axis of rotation D or are arranged so as to be distributed in the circumferential direction around an axis of the gas inlet element 3.
  • a device which is characterized in that the at least one second gas outlet opening 5 is arranged in such a way that the flow of the second process gas emerging therefrom enters the process chamber 2 only via an outlet sector a limited to an angular range around the axis of rotation D, and is operable by a control device 28 in such a way that the flow of the second process gas is fed into the process chamber 2 in a pulsed manner at the speed.
  • a device which is characterized in that the first gas outlet openings 4 are arranged uniformly distributed over a circumferential surface 3' of the gas inlet member 3 and the angular range of the outlet sector a corresponds at most to the angular distance ö between two storage locations 17 lying next to one another in the circumferential direction around the axis of rotation D.
  • a device which is characterized in that the at least one second gas outlet opening is arranged in a process chamber ceiling 20 or is the mouth of a supply line 9 which projects into the process chamber 2 in a region between the gas inlet element 3 and the storage locations 17.
  • a device characterized by a measuring device 26 for determining a value of the growth rate, the layer composition and/or the dopant incorporation and a control device 28 with which the mass flow of the second process gas can be varied to achieve a desired value.

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Abstract

L'invention se rapporte à un dispositif et un procédé de traitement simultané d'une pluralité de substrats (15) disposés dans une chambre de traitement (2) autour d'un organe d'entrée de gaz (3), les substrats (15) étant mis en rotation à une vitesse de rotation autour d'un axe de rotation (D) lors de l'alimentation d'un premier gaz de traitement à travers des premières ouvertures de sortie de gaz (4) de l'organe d'entrée de gaz (3), un second gaz de traitement, différent du premier gaz de traitement, étant alimenté dans la chambre de traitement (2) à travers au moins une seconde ouverture de sortie de gaz (5) disposée en amont des substrats (15) par rapport au sens d'écoulement (S) de l'écoulement du premier gaz de traitement, les premier et second gaz de traitement circulant sur les substrats dans la chambre de traitement (2) dans le sens d'écoulement (S) et provoquant à cet endroit chacun une croissance ou un changement de la composition de couche d'une couche sur les substrats (15). Afin d'augmenter l'uniformité des couches déposées simultanément sur différents substrats (15), selon l'invention, le second gaz de traitement est alimenté dans un secteur de sortie (α) limité à une plage angulaire autour de l'axe de rotation (D) et est pulsé dans la chambre de traitement (2) d'une manière synchronisée avec la vitesse de rotation.
PCT/EP2024/074988 2023-09-11 2024-09-06 Dispositif et procédé pour influencer individuellement la croissance de couche d'une couche déposée sur un substrat dans un réacteur cvd recevant une pluralité de substrats Pending WO2025056433A1 (fr)

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DE102023124413.2A DE102023124413A1 (de) 2023-09-11 2023-09-11 Vorrichtung und Verfahren zur individuellen Beeinflussung des Schichtwachstums einer auf einem Substrat abgeschiedenen Schicht in einem eine Vielzahl von Substrate aufnehmenden CVD-Reaktor

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EP2560193A1 (fr) * 2010-04-12 2013-02-20 Semes Co., Ltd. Unité d'injection de gaz et dispositif de dépôt en phase vapeur de couche mince, et procédé faisant appel à ladite unité et audit dispositif
US20130180454A1 (en) * 2010-09-17 2013-07-18 Wonik Ips Co., Ltd. Thin film deposition apparatus
US20140087567A1 (en) 2012-09-27 2014-03-27 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
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JP2019169743A (ja) * 2019-06-28 2019-10-03 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
DE102019104433A1 (de) 2019-02-21 2020-08-27 Aixtron Se CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur
DE102023100077A1 (de) 2023-01-03 2024-07-04 Aixtron Se Vorrichtung und Verfahren zum Behandeln von Substraten

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JPS5877224A (ja) * 1981-11-02 1983-05-10 Hitachi Ltd 気相成長方法
EP1039512A2 (fr) * 1999-03-23 2000-09-27 Matsushita Electric Industrial Co., Ltd. Procédé de croissance d'une couche semi-conductrice par déposition chimique en phase vapeur pulsée
EP2560193A1 (fr) * 2010-04-12 2013-02-20 Semes Co., Ltd. Unité d'injection de gaz et dispositif de dépôt en phase vapeur de couche mince, et procédé faisant appel à ladite unité et audit dispositif
US20130180454A1 (en) * 2010-09-17 2013-07-18 Wonik Ips Co., Ltd. Thin film deposition apparatus
US20140087567A1 (en) 2012-09-27 2014-03-27 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US20180269078A1 (en) 2015-08-20 2018-09-20 Jusung Engineering Co., Ltd. Substrate treatment device and substrate treatment method
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JP2019169743A (ja) * 2019-06-28 2019-10-03 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
DE102023100077A1 (de) 2023-01-03 2024-07-04 Aixtron Se Vorrichtung und Verfahren zum Behandeln von Substraten

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WO2025172419A3 (fr) * 2024-02-16 2025-10-09 Aixtron Se Procédé et dispositif permettant le dépôt de sic dopé n

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