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WO2025053688A1 - High-precision dna synthesis method using atoliter nano-well array - Google Patents

High-precision dna synthesis method using atoliter nano-well array Download PDF

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WO2025053688A1
WO2025053688A1 PCT/KR2024/013533 KR2024013533W WO2025053688A1 WO 2025053688 A1 WO2025053688 A1 WO 2025053688A1 KR 2024013533 W KR2024013533 W KR 2024013533W WO 2025053688 A1 WO2025053688 A1 WO 2025053688A1
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dna synthesis
light
nanowell
nanowell array
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천홍구
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Korea University Research and Business Foundation
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0046Sequential or parallel reactions, e.g. for the synthesis of polypeptides or polynucleotides; Apparatus and devices for combinatorial chemistry or for making molecular arrays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122Incoherent waves
    • B01J19/123Ultraviolet light
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122Incoherent waves
    • B01J19/127Sunlight; Visible light
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00277Apparatus
    • B01J2219/00279Features relating to reactor vessels
    • B01J2219/00306Reactor vessels in a multiple arrangement
    • B01J2219/00313Reactor vessels in a multiple arrangement the reactor vessels being formed by arrays of wells in blocks
    • B01J2219/00315Microtiter plates
    • B01J2219/00317Microwell devices, i.e. having large numbers of wells
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00277Apparatus
    • B01J2219/00351Means for dispensing and evacuation of reagents
    • B01J2219/00427Means for dispensing and evacuation of reagents using masks
    • B01J2219/00432Photolithographic masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00709Type of synthesis
    • B01J2219/00711Light-directed synthesis
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00718Type of compounds synthesised
    • B01J2219/0072Organic compounds
    • B01J2219/00722Nucleotides

Definitions

  • the present invention relates to a technology for an atomizer nanowell array for DNA synthesis that can reduce errors in a photochemical-based DNA synthesis process by preventing unwanted reflection of light.
  • the amount of data generated is increasing very rapidly due to the increase in personal social network services (SNS) media that mainly use images and videos.
  • SNS personal social network services
  • AR augmented reality
  • VR virtual reality
  • MR mixed reality
  • 3D media such as holograms
  • the amount of data is expected to increase even more rapidly.
  • the amount of data stored worldwide in 2040 is expected to reach 1024 to 1029 bits (Summary report, Technology Working Group Meeting on future DNA synthesis technologies (September 14, 2017, Arlington, VA)).
  • the data storage medium of major devices such as computers and smartphones is flash memory
  • flash memory has a data density of about 1 bit per 1 pg.
  • 10 14 kg of silicon wafers are required, but the supply of silicon wafers in 2040 is expected to be about 10 8 kg, which is far short of demand.
  • existing data storage media have a limitation that the data retention period is about 10 years.
  • DNA can overcome the data storage density, which is a shortcoming of existing storage media, and can store information stably even under physical shock.
  • DNA can store 2x1024 bits, which is equivalent to 109 kg of flash memory, by synthesizing 1 kg, making it suitable for large-capacity data storage, and in particular, it has the advantage of a very long storage period for stored data.
  • errors occurring during DNA synthesis cause a decrease in data storage density and information loss, which is an obstacle to the commercialization of DNA storage devices.
  • the photochemical DNA synthesis method deprotects the protective group at the end of DNA by shining light, the light reaches undesired areas due to diffraction, scattering, and reflection of the light.
  • the inventors of the present invention studied to improve the problem that, in the DNA deprotection step of a photochemical-based DNA synthesis process, i) light is formed as a blurry image on the opposite substrate in addition to the DNA synthesis surface, so that sufficient light is not provided to the edge, resulting in the failure to deprotect the protection group, or ii) light reflected from the opposite substrate reaches the synthesis substrate again, resulting in the deprotection of the protection group at a location where the light should not reach.
  • a nanowell array with a diameter of ⁇ 100 nm was formed by erecting a ⁇ 100 nm thick aluminum thin film on the surface of a DNA synthesis substrate, taking into account the characteristic that light cannot pass through an aperture narrower than the diffraction limit ( ⁇ half wavelength).
  • an object of the present invention is to provide the atotore nanowell array and a DNA synthesis device including the atotore nanowell array.
  • one aspect of the present invention provides an atotore nanowell array for DNA synthesis comprising the following composition:
  • the above nanowells are partitioned by a thin film and have a width, length, and height of 50 nm to 2 ⁇ m, respectively.
  • the width, length, and height of the nanowell may each be 50 nm to 2 ⁇ m, preferably 50 nm to 1 ⁇ m, more preferably 50 nm to 200 nm, and even more preferably 50 nm to 100 nm.
  • the substrate portion is made of a material selected from the group consisting of silicon, silicon nitride, silicon oxide, glass, and quartz.
  • the thin film is made of a material selected from the group consisting of aluminum (Al), chromium (Cr), titanium (Ti), copper (Cu), gold (Au), platinum (Pt), and silver (Ag).
  • the thin film may have a thickness of 50 nm to 2 ⁇ m, preferably 50 nm to 200 nm, more preferably 50 nm to 100 nm.
  • a light source unit that irradiates light in the direction of a thin film from the substrate unit of the above nanowell array
  • a DNA synthesis device comprising a light-space modulator that controls the light irradiation pattern to the nanowell array of the light source unit.
  • the above light-space modulator can be a photomask, a digital micromirror device (DMD), or a microLED.
  • DMD digital micromirror device
  • the horizontal and vertical lengths of the nanowell may be shorter than the wavelength irradiated from the light source unit.
  • a nanowell array for DNA synthesis according to one example of the present invention, unnecessary reflection of light can be prevented during a photochemical-based DNA synthesis process, thereby reducing DNA synthesis errors and also reducing sample consumption.
  • Figure 2 shows the results of measuring the amount of light irradiated to the synthesis site during a photochemical-based DNA synthesis process.
  • Figure 4 shows an example of the process in which DNA ends are deprotected and new nucleotides are added in a photochemical-based DNA synthesis method.
  • Figure 5 shows an example of the process in which DNA ends are deprotected and new nucleotides are added by a deprotecting molecule providing substance in a photochemical-based DNA synthesis process.
  • Figure 7 shows the result of calculating the propagation profile when light having a UV wavelength of 365 nm is irradiated on a nanowell with a thickness of 20 nm and a diameter of 80 nm.
  • Figure 1 schematically illustrates the causes of synthetic errors in the photochemical-based DNA synthesis process.
  • light When light (UV or 100 to 500 nm wavelength) is selectively irradiated to the synthesis area of a DNA synthesis substrate using a photomask or a digital micromirror device (DMD), the light may be reflected, scattered, or spread by diffraction from the DNA synthesis substrate, so that the light may reach unwanted areas.
  • a photomask or a digital micromirror device DMD
  • the area where light insufficiently reaches is indicated as an error prone zone in Fig. 1. Since the light reaching the error prone zone does not reach the level (threshold) required for deprotection of the protecting group, some of the protecting groups are deprotected, but some of the protecting groups are not removed and remain as is.
  • Figure 2 shows the results of measuring the amount of light irradiated to the target location (DNA synthesis area) of the DNA synthesis substrate during a photochemical-based DNA synthesis process.
  • Figures 4 and 5 illustrate the deprotection and coupling mechanisms during DNA synthesis.
  • Figure 4 shows an example of the process in which DNA ends are deprotected and new nucleotides are added in a photochemical-based DNA synthesis method.
  • Protecting groups that fall off by direct reaction with light include BzNPPOC, NPPOC, and SPh-NOOPC.
  • Figure 5 shows an example of the process in which DNA ends are deprotected and new nucleotides are added by a deprotecting molecule supplier during photochemical-based DNA synthesis.
  • the deprotecting molecule donor substance When irradiated with light, the deprotecting molecule donor substance receives light and releases an active deprotecting molecule, which attacks and removes the protecting group. As a result, an -OH group is exposed at the 5' end of the DNA, so that a new nucleotide can be attached to the end of the DNA strand being synthesized.
  • Hydroquinone can be used as the deprotecting molecule providing material
  • hydrogen ion (H + ) can be used as the active deprotecting molecule
  • DMT can be used as the protecting group.
  • Figure 6 shows an example of an atolith nanowell array in which nanowells are formed by an aluminum thin film on the surface of a DNA synthesis substrate.
  • Fig. 6 shows the process of forming a circular aluminum nanowell array on the surface of a DNA synthesis substrate so that the nanowells have a thickness and diameter of ⁇ 100 nm, and then irradiating light to perform DNA synthesis.
  • the nanowell may have a width, length, and height of 50 nm to 1 ⁇ m, and the thin film may have a thickness of 50 nm to 2 ⁇ m. It is also possible to make the height of the nanowell and the thickness of the thin film the same.
  • the above aluminum nanowells can be created using laser interference lithography (LIL), and can also be processed using nanobead self-assembly lithography, electron beam lithography (EBL), and focused ion-beam lithography (FIB).
  • LIL laser interference lithography
  • EBL electron beam lithography
  • FIB focused ion-beam lithography
  • the process of flowing a solution for refractive index matching which is a method used in the past to prevent DNA synthesis errors caused by light reflection, into a flow cell or filling an anti-reflecting material into the back of the opposite substrate can be omitted.
  • Figure 7 shows the result of calculating the propagation profile using Matlab when irradiating a UV wavelength of 365 nm on a substrate having chromium nanowells with a thickness of 20 nm and a diameter of 80 nm.

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  • Chemical Kinetics & Catalysis (AREA)
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  • Electromagnetism (AREA)
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  • General Health & Medical Sciences (AREA)
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  • Apparatus Associated With Microorganisms And Enzymes (AREA)

Abstract

The present invention relates to a technology for an atoliter reaction chamber array that prevents unwanted light reflections, thereby reducing errors during the photochemical-based DNA synthesis process. Utilizing the array allows for a reduction in DNA synthesis errors and the consumption of samples.

Description

아토리터 나노웰 어레이를 이용한 고정밀 DNA 합성 방법High-precision DNA synthesis method using an atotore nanowell array

본 발명은 빛의 원치 않는 반사를 방지하여 광화학 기반 DNA 합성 과정에서 오류를 줄일 수 있는 DNA 합성용 아토리터 나노웰 어레이에 관한 기술이다.The present invention relates to a technology for an atomizer nanowell array for DNA synthesis that can reduce errors in a photochemical-based DNA synthesis process by preventing unwanted reflection of light.

이미지와 동영상을 주로 하는 개인 소셜 네트워크 서비스 (social network service, SNS) 매체의 증가로 데이터 생성량이 매우 빠르게 증가하고 있다. 향후 AR (augmented reality), VR (virtual reality), MR (mixed reality) 기기, 그리고 홀로그램 등 3D 미디어가 보편화되면 데이터 양은 더욱 급증할 것으로 예상된다. 구체적으로 2040년 전세계적으로 저장된 데이터 양은 1024 비트에서 1029 비트에 달할 것으로 예상된다 (Summary report, Technology Working Group Meeting on future DNA synthesis technologies (September 14, 2017, Arlington, VA)).The amount of data generated is increasing very rapidly due to the increase in personal social network services (SNS) media that mainly use images and videos. In the future, as augmented reality (AR), virtual reality (VR), mixed reality (MR) devices, and 3D media such as holograms become widespread, the amount of data is expected to increase even more rapidly. Specifically, the amount of data stored worldwide in 2040 is expected to reach 1024 to 1029 bits (Summary report, Technology Working Group Meeting on future DNA synthesis technologies (September 14, 2017, Arlington, VA)).

현재 컴퓨터, 스마트폰 등 주요 기기의 데이터 저장 매체는 플래쉬 메모리 (flash memory)로 플래쉬 메모리는 1 pg 당 1 비트 (bit) 정도의 데이터 밀도 (data density)를 갖는다. 상기 2040년에 필요한 데이터 양에 해당하는 플래쉬 메모리를 공급하기 위해서는 1014 kg의 실리콘 웨이퍼가 필요하나, 2040년의 실리콘 웨이퍼 공급량은 108 kg 정도로 예상되어 수요에 크게 못 미친다. 또한 기존의 데이터 저장 매체는 데이터 보존 기간이 10년 내외라는 한계가 있다.Currently, the data storage medium of major devices such as computers and smartphones is flash memory, and flash memory has a data density of about 1 bit per 1 pg. In order to supply flash memory corresponding to the amount of data required in 2040, 10 14 kg of silicon wafers are required, but the supply of silicon wafers in 2040 is expected to be about 10 8 kg, which is far short of demand. In addition, existing data storage media have a limitation that the data retention period is about 10 years.

이에 새로운 데이터 저장 매체를 개발하기 위한 시도가 계속해서 이루어지고 있으며 이중 하나가 DNA 저장 장치이다. DNA를 저장 매체로 이용하면 기존의 저장매체의 단점인 데이터 저장 밀도를 뛰어 넘을 수 있고, 물리적인 충격에도 안정적으로 정보를 저장할 수 있다. 또한, DNA는 1 kg의 합성으로 플래쉬 메모리 109 kg에 해당하는 2x1024 비트를 저장할 수 있어 대용량 데이터 저장에 적합하며, 특히 저장된 데이터의 보관기간이 매우 긴 장점이 있다. 그러나 DNA 합성 시 발생하는 오류는 데이터의 저장 밀도 저하 및 정보 손실을 일으켜 DNA 저장 장치의 상용화에 걸림돌로 작용하고 있다.Accordingly, attempts are continuously being made to develop new data storage media, one of which is DNA storage devices. Using DNA as a storage medium can overcome the data storage density, which is a shortcoming of existing storage media, and can store information stably even under physical shock. In addition, DNA can store 2x1024 bits, which is equivalent to 109 kg of flash memory, by synthesizing 1 kg, making it suitable for large-capacity data storage, and in particular, it has the advantage of a very long storage period for stored data. However, errors occurring during DNA synthesis cause a decrease in data storage density and information loss, which is an obstacle to the commercialization of DNA storage devices.

특히, 광화학 DNA 합성 방법은 빛을 비추어 DNA 말단의 보호기를 탈보호 시키므로 빛의 회절 (diffraction), 산란 (scattering), 반사에 의해 원치 않는 영역에 빛이 도달하게 된다. 또한, DNA를 합성하고자 하는 부위에는 빛이 불충분하게 도달하는 영역이 존재하는 문제점이 있다. 이러한 문제점으로 인해 목적하지 않았던 DNA에서서 탈보호가 일어나고, 목적하는 부위에서는 DNA의 탈보호가 일어나지 않게 되며, 결과적으로 DNA 합성 오류가 발생한다.In particular, since the photochemical DNA synthesis method deprotects the protective group at the end of DNA by shining light, the light reaches undesired areas due to diffraction, scattering, and reflection of the light. In addition, there is a problem that there is an area where insufficient light reaches the area where DNA is to be synthesized. Due to these problems, deprotection occurs in unintended DNA and deprotection of DNA does not occur in the intended area, resulting in DNA synthesis errors.

상기와 같은 상황에서 본 발명자는 광화학 기반 DNA 합성 과정의 DNA 탈보호 단계에서 i) DNA 합성 표면 외에 반대편 기판에도 빛이 흐릿 (blur)한 이미지로 맺혀 테두리 부분에 충분한 광량이 제공되지 못함으로써 보호기 (protection group)가 탈보호되지 않거나, ii) 반대편 기판에서 반사된 빛이 다시 합성기판에 도달하여 빛이 도달하지 않아야 할 위치의 보호기가 탈보호되는 문제를 개선하고자 연구하였다.In the above situation, the inventors of the present invention studied to improve the problem that, in the DNA deprotection step of a photochemical-based DNA synthesis process, i) light is formed as a blurry image on the opposite substrate in addition to the DNA synthesis surface, so that sufficient light is not provided to the edge, resulting in the failure to deprotect the protection group, or ii) light reflected from the opposite substrate reaches the synthesis substrate again, resulting in the deprotection of the protection group at a location where the light should not reach.

그 결과, 빛이 회절한계 (diffraction limit; ~절반 파장)보다 좁은 구멍 (aperture)을 통과하지 못하는 특성에 착안하여 DNA 합성기판 표면에 ~100 nm 두께의 알루미늄 박막을 세워 ~100 nm 직경의 나노웰 어레이 (nanowell array)를 구성하였다. 이렇게 나노웰 어레이를 구성하면 합성 기판 하단에서 조사된 빛이 합성기판 표면에 감쇠장 (evanescent field)으로서 존재하고 나노웰을 통과하지 못하게 된다. 따라서 반대편 기판의 흐릿한 이미지, 그리고 반사된 빛에 의한 DNA 합성 오류 문제가 원천 차단된다. 상기 나노웰 어레이에서 DNA 합성을 위한 광화학 반응은 ~100x100x100 nm3 (=~1 아토 리터 (atto liter)) 공간으로 제한되므로 본 발명자는 상기 나노웰 어레이를 아토리터 나노웰 어레이로 명명하였다.As a result, a nanowell array with a diameter of ~100 nm was formed by erecting a ~100 nm thick aluminum thin film on the surface of a DNA synthesis substrate, taking into account the characteristic that light cannot pass through an aperture narrower than the diffraction limit (~half wavelength). When the nanowell array is formed in this way, light irradiated from the bottom of the synthesis substrate exists as an evanescent field on the surface of the synthesis substrate and cannot pass through the nanowell. Therefore, the blurry image of the opposite substrate and the problem of DNA synthesis errors due to reflected light are fundamentally prevented. Since the photochemical reaction for DNA synthesis in the nanowell array is limited to a space of ~100x100x100 nm 3 (=~1 atto liter), the present inventors named the nanowell array an atotoliter nanowell array.

따라서, 본 발명의 목적은 상기 아토리터 나노웰 어레이 및 상기 아토리터 나노웰 어레이를 포함하는 DNA 합성 기기를 제공하는 것이다.Accordingly, an object of the present invention is to provide the atotore nanowell array and a DNA synthesis device including the atotore nanowell array.

상기 목적을 달성하기 위하여 본 발명의 일 양상은 하기 구성을 포함하는 DNA 합성용 아토리터 나노웰 어레이를 제공한다:To achieve the above object, one aspect of the present invention provides an atotore nanowell array for DNA synthesis comprising the following composition:

상기 기판부에 형성된 나노웰 어레이를 포함하되,Including a nanowell array formed on the above substrate,

상기 나노웰은 박막에 의해 구획되고, 가로, 세로 및 높이가 각각 50 nm 내지 2 μm이다.The above nanowells are partitioned by a thin film and have a width, length, and height of 50 nm to 2 μm, respectively.

본 발명에서, 상기 나노웰의 가로, 세로 및 높이는 각각 50 nm 내지 2 μm일 수 있으며, 바람직하게는 50 nm 내지 1 μm, 보다 바람직하게는 50 nm 내지 200 nm, 더욱 바람직하게는 50 nm 내지 100 nm일 수 있다.In the present invention, the width, length, and height of the nanowell may each be 50 nm to 2 μm, preferably 50 nm to 1 μm, more preferably 50 nm to 200 nm, and even more preferably 50 nm to 100 nm.

본 발명에서, 상기 기판부는 규소 (silicon), 질화 규소 (silicon nitride), 산화 규소 (silicon oxide), 유리 (glass) 및 석영 (quartz)으로 이루어진 군에서 선택되는 재질로 이루어진다.In the present invention, the substrate portion is made of a material selected from the group consisting of silicon, silicon nitride, silicon oxide, glass, and quartz.

본 발명에서, 상기 박막은 알루미늄 (Al), 크로뮴 (Cr), 타이타늄 (Ti), 구리 (Cu), 금 (Au), 백금 (Pt) 및 은 (Ag)으로 이루어진 군에서 선택되는 재질로 만들어진다.In the present invention, the thin film is made of a material selected from the group consisting of aluminum (Al), chromium (Cr), titanium (Ti), copper (Cu), gold (Au), platinum (Pt), and silver (Ag).

또한, 상기 박막은 두께가 50 nm 내지 2 μm일 수 있으며, 바람직하게는 50 nm 내지 200 nm, 보다 바람직하게는 50 nm 내지 100 nm일 수 있다.Additionally, the thin film may have a thickness of 50 nm to 2 μm, preferably 50 nm to 200 nm, more preferably 50 nm to 100 nm.

본 발명의 다른 목적은Another object of the present invention is

상기 나노웰 어레이;The above nanowell array;

상기 나노웰 어레이의 기판부에서 박막 방향으로 빛을 조사하는 광원부; 및A light source unit that irradiates light in the direction of a thin film from the substrate unit of the above nanowell array; and

상기 광원부의 나노웰 어레이로의 빛 조사 패턴을 제어하는 빛-공간 변조기;를 포함하는, DNA 합성기기를 제공한다.A DNA synthesis device is provided, comprising a light-space modulator that controls the light irradiation pattern to the nanowell array of the light source unit.

상기 빛-공간변조기는 포토마스크 (photomask), DMD (digital micromirror device) 또는 마이크로LED일 수 있다.The above light-space modulator can be a photomask, a digital micromirror device (DMD), or a microLED.

본 발명에서, 상기 나노웰의 가로 및 세로 길이는 상기 광원부에서 조사되는 파장보다 짧은 것일 수 있다.In the present invention, the horizontal and vertical lengths of the nanowell may be shorter than the wavelength irradiated from the light source unit.

본 발명의 일 예에 따른 DNA 합성용 나노웰 어레이를 사용하면 광화학 기반 DNA 합성 과정에서 빛의 불필요한 반사를 막아 DNA 합성 오류를 감소시킬 수 있고, 소모되는 시료 또한 줄일 수 있다.Using a nanowell array for DNA synthesis according to one example of the present invention, unnecessary reflection of light can be prevented during a photochemical-based DNA synthesis process, thereby reducing DNA synthesis errors and also reducing sample consumption.

도 1은 광화학 기반 DNA 합성 과정에서 합성 오류가 나타나는 원인을 개락적으로 보여준다.Figure 1 schematically illustrates the causes of synthetic errors in the photochemical-based DNA synthesis process.

도 2는 광화학 기반 DNA 합성 과정에서 합성 부위에 조사된 광량을 측정한 결과이다.Figure 2 shows the results of measuring the amount of light irradiated to the synthesis site during a photochemical-based DNA synthesis process.

도 3은 빛이 DNA 합성 기판의 반대편 기판까지 도달하여 광화학 기반 DNA 합성 과정에서 오류가 나타나는 일 예를 보여준다.Figure 3 shows an example of an error occurring in a photochemical-based DNA synthesis process when light reaches the opposite substrate of the DNA synthesis substrate.

도 4는 광화학 기반 DNA 합성 방법에서 DNA 말단이 탈보호되고 새로운 뉴클레오티드가 첨가되는 과정의 일 예를 보여준다.Figure 4 shows an example of the process in which DNA ends are deprotected and new nucleotides are added in a photochemical-based DNA synthesis method.

도 5는 광화학 기반 DNA 합성 과정에서 탈보호 분자 제공 물질에 의해 DNA 말단이 탈보호되고 새로운 뉴클레오티드가 첨가되는 과정의 일 예를 보여준다.Figure 5 shows an example of the process in which DNA ends are deprotected and new nucleotides are added by a deprotecting molecule providing substance in a photochemical-based DNA synthesis process.

도 6은 DNA 합성 기판 표면에 알루미늄 나노웰이 형성된 아토리터 나노웰 어레이의 일 예를 보여 준다.Figure 6 shows an example of an atolith nanowell array in which aluminum nanowells are formed on the surface of a DNA synthesis substrate.

도 7은 두께 20 nm, 직경 80 nm의 나노웰에 365 nm의 UV 파장을 갖는 빛을 조사하였을 때 전파 프로파일을 계산한 결과이다.Figure 7 shows the result of calculating the propagation profile when light having a UV wavelength of 365 nm is irradiated on a nanowell with a thickness of 20 nm and a diameter of 80 nm.

이하, 첨부된 도면을 참조하여 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명을 용이하게 실시할 수 있도록 바람직한 실시예를 상세히 설명한다. 다만, 본 발명의 바람직한 실시예를 상세하게 설명함에 있어, 관련된 공지 기능 또는 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명을 생략한다. 또한, 유사한 기능 및 작용을 하는 부분에 대해서는 도면 전체에 걸쳐 동일한 부호를 사용한다. 한편, 어떤 구성요소를 '포함'한다는 것은, 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있다는 것을 의미한다.Hereinafter, with reference to the attached drawings, preferred embodiments will be described in detail so that those skilled in the art can easily practice the present invention. However, when describing preferred embodiments of the present invention in detail, if it is determined that a specific description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. In addition, the same reference numerals are used throughout the drawings for parts that perform similar functions and actions. Meanwhile, "including" a certain component does not exclude other components unless specifically stated otherwise, but rather means that other components may be further included.

도 1은 광화학 기반 DNA 합성 과정에서 합성 오류가 나타나는 원인을 개락적으로 보여준다.Figure 1 schematically illustrates the causes of synthetic errors in the photochemical-based DNA synthesis process.

포토마스크 (photomask) 또는 DMD (digital micromirror device)를 이용하든 DNA 합성 기판 (substrate)의 합성 영역에 선택적으로 탈보호를 위한 빛 (UV 또는 100 내지 500 nm 파장)을 조사하면 해당 빛이 DNA 합성 기판에서 반사, 분산되거나, 또는 회절에 의해 퍼져 빛이 불필요한 영역에 도달할 수 있다.When light (UV or 100 to 500 nm wavelength) is selectively irradiated to the synthesis area of a DNA synthesis substrate using a photomask or a digital micromirror device (DMD), the light may be reflected, scattered, or spread by diffraction from the DNA synthesis substrate, so that the light may reach unwanted areas.

도 1을 보면 DNA 합성 기판에서 회절된 빛이 DNA 합성 영역이 아닌 곳에 위치한 DNA를 탈보호시키는 것을 알 수 있다. 또한, DNA 합성 기판에서 합성 영역의 테두리에는 빛이 불충분하게 도달하는데 이 테두리에서는 보호기의 확률적 탈보호 (stochastic deprotection)가 일어날 수 있다.As shown in Figure 1, it can be seen that light diffracted from a DNA synthesis substrate deprotects DNA located outside the DNA synthesis region. In addition, light insufficiently reaches the edge of the synthesis region in the DNA synthesis substrate, and stochastic deprotection of protecting groups can occur at this edge.

빛이 불충분하게 도달하는 영역은 도 1에서 오류 발생 용이 영역 (error prone zone)으로 표시되어 있다. 오류 발생 용이 영역에 도달하는 빛은 보호기의 탈보호에 필요한 수준 (threshold)에 미치지 못하기 때문에 일부 보호기는 탈보호가 되나, 일부 보호기는 제거되지 않고 그대로 남아 있게 된다.The area where light insufficiently reaches is indicated as an error prone zone in Fig. 1. Since the light reaching the error prone zone does not reach the level (threshold) required for deprotection of the protecting group, some of the protecting groups are deprotected, but some of the protecting groups are not removed and remain as is.

DNA 합성 기판의 목적 위치에 빛이 불충분하게 도달하는 영역이 존재하는 것은 도 2를 통해서도 확인할 수 있다.It can also be confirmed through Figure 2 that there is an area where light insufficiently reaches the target location of the DNA synthesis substrate.

도 2는 광화학 기반 DNA 합성 과정에서 DNA 합성 기판의 목적 위치 (DNA 합성 영역)에 조사된 광량을 측정한 결과이다.Figure 2 shows the results of measuring the amount of light irradiated to the target location (DNA synthesis area) of the DNA synthesis substrate during a photochemical-based DNA synthesis process.

도 2에서 왼쪽 그림은 DNA 합성 부위에 빛이 조사되는 것을 탑 뷰 (top view)로 본 것으로 각 지점에서의 빛의 강도 (intensity)를 색으로 표현하였다. 오른쪽 그림은 빛의 강도를 x-축 (파란색), y-축 (초록색)에서 그린 것으로 DNA 합성 부위에 빛을 비출 때 가운데 영역은 일정한 광량이 유지되지만, 테두리 부분에 도달하는 광량은 구배 (gradient)를 갖고 감소하는 것을 알 수 있다. 즉, 기판에 비춰지는 빛 패턴의 명암비가 완벽하지 않다. In Fig. 2, the left picture is a top view of light irradiating the DNA synthesis site, and the intensity of light at each point is expressed by color. The right picture is a drawing of the light intensity along the x-axis (blue) and the y-axis (green). When light is shined on the DNA synthesis site, the central area maintains a constant amount of light, but the amount of light reaching the edge decreases with a gradient. In other words, the contrast ratio of the light pattern illuminated on the substrate is not perfect.

도 1에 대한 설명에 기재하였듯이 테두리 부분 (도 1에서 오류 발생 용이 영역에 해당함)은 빛의 강도가 점차 감소하므로 탈보호를 위한 충분한 광량을 제공할 수 없고, 이로 인하여 특정 위치에서는 탈보호가 일어나나, 다른 위치에서는 일어나지 않을 수도 있다. 이러한 확률적 탈보호는 매우 무작위이기 때문에 매 사이클의 DNA 합성에 있어, (n-1)번째 DNA 합성에서는 탈보호가 안된 DNA 가닥 (strand)이더라도 n번째 DNA 합성에서는 탈보호가 발생하고, 새로운 뉴클레오티드가 첨가되면 (커플링, coupling) (n-1) 번째 서열에 대해 결실 오유 (deletion error)가 발생할 수 있다.As described in the description of Fig. 1, the edge portion (corresponding to the error-prone area in Fig. 1) cannot provide sufficient light for deprotection because the light intensity gradually decreases, and thus deprotection may occur at a specific location but not at another location. Since this probabilistic deprotection is very random, in each cycle of DNA synthesis, even if a DNA strand is not deprotected in the (n-1)th DNA synthesis, deprotection may occur in the nth DNA synthesis, and when a new nucleotide is added (coupled), a deletion error may occur for the (n-1)th sequence.

즉, n번째 DNA 합성에서 탈보호되는지 여부는 이전 (n-1)번째 DNA 합성에서의 탈보호 여부와 독립적이다. 이와 같은 테두리 (오류 발생 용이 영역)에서의 결실 오류 (deletion error) 때문에 매 합성 사이클에서 추가 합성이 일어나지 않도록 합성 중인 DNA 또는 핵산의 말단을 차단하는 캡핑 (capping)이 필요하며, 합성이 종료된 이후에는 목표했던 DNA 길이보다 짧은 것들은 제거하는 공정이 필요하다. 이러한 테두리에서의 에러는 길이 대 표면 비율 (length to surface ratio)이 높아질수록, 즉, 빛이 조사되는 영역의 크기가 작아질수록, 그 영향이 커지는데, 이는 마이크로어레이 (microarray) DNA 합성의 동시합성 가능 가지수를 높이기 위하여 한 스팟 (spot)의 크기를 줄이는 것을 어렵게 만든다.That is, whether or not deprotection occurs in the nth DNA synthesis is independent of whether or not deprotection occurred in the previous (n-1)th DNA synthesis. Because of deletion errors in such borders (error-prone regions), capping is required to block the ends of the DNA or nucleic acids being synthesized to prevent additional synthesis in each synthesis cycle, and a process to remove DNA shorter than the target length is required after synthesis is complete. The influence of errors in these borders increases as the length to surface ratio increases, that is, as the size of the area irradiated with light decreases, which makes it difficult to reduce the size of one spot to increase the number of possible simultaneous synthesis branches of microarray DNA synthesis.

도 3은 빛이 DNA 합성 기판의 반대편 기판까지 도달하여 광화학 기반 DNA 합성 과정에서 오류가 나타나는 일 예를 보여준다.Figure 3 shows an example of an error occurring in a photochemical-based DNA synthesis process when light reaches the opposite substrate of the DNA synthesis substrate.

DNA 합성 기판의 하단에서 조사된 빛이 반대편 기판에 맺히게 되면 해당 부분의 DNA에서 탈보호가 일어나게 되고, 추가로 빛의 반사가 일어나면 DNA 합성 기판의 원치 않는 영역에까지 빛이 도달할 수 있다.When light irradiated from the bottom of the DNA synthesis substrate is focused on the opposite substrate, deprotection occurs in the DNA of that portion, and if additional light reflection occurs, the light can reach unwanted areas of the DNA synthesis substrate.

도 4 및 도 5는 DNA 합성 과정에서 탈보호 및 커플링 기작을 설명한다.Figures 4 and 5 illustrate the deprotection and coupling mechanisms during DNA synthesis.

도 4는 광화학 기반 DNA 합성 방법에서 DNA 말단이 탈보호되고 새로운 뉴클레오티드가 첨가되는 과정의 일 예를 보여준다.Figure 4 shows an example of the process in which DNA ends are deprotected and new nucleotides are added in a photochemical-based DNA synthesis method.

빛에 의해 DNA 말단의 탈보호기가 떨어져 나가면서 DNA의 5' 말단에 -OH기가 노출되므로 새로운 뉴클레오티드가 합성 중인 DNA 가닥의 말단에 결합할 수 있다. 합성에 공급되는 뉴클레오티드는 일 말단에 보호기기 결합되어 있으므로 별도의 탈보호 과정이 없으면 DNA 추가 합성이 발생하지 않는다.When the deprotecting group at the end of DNA is removed by light, the -OH group is exposed at the 5' end of the DNA, so that a new nucleotide can be attached to the end of the DNA strand being synthesized. Since the nucleotides supplied for synthesis have a protecting group attached to one end, additional DNA synthesis does not occur without a separate deprotection process.

빛과 직접 반응하여 떨어져 나가는 보호기에는 BzNPPOC, NPPOC, SPh-NOOPC 등이 있다.Protecting groups that fall off by direct reaction with light include BzNPPOC, NPPOC, and SPh-NOOPC.

도 5는 광화학 기반 DNA 합성 과정에서 탈보호 분자 제공 물질 (deprotecting molecule supplier)에 의해 DNA 말단이 탈보호되고 새로운 뉴클레오티드가 첨가되는 과정의 일 예를 보여준다.Figure 5 shows an example of the process in which DNA ends are deprotected and new nucleotides are added by a deprotecting molecule supplier during photochemical-based DNA synthesis.

빛이 조사되면 탈보호 분자 제공 물질이 빛을 받아 활성 탈보호 분자 (active deprotecting molecule)를 내놓고, 이 활성 탈보호 분자가 보호기를 공격하여 떼어낸다. 결과적으로 DNA의 5' 말단에 -OH기가 노출되므로 새로운 뉴클레오티드가 합성 중인 DNA 가닥의 말단에 결합할 수 있다.When irradiated with light, the deprotecting molecule donor substance receives light and releases an active deprotecting molecule, which attacks and removes the protecting group. As a result, an -OH group is exposed at the 5' end of the DNA, so that a new nucleotide can be attached to the end of the DNA strand being synthesized.

상기 탈보호 분자 제공 물질로는 하이드로퀴논, 활성 탈보호 분자로는 수소 이온 (H+)이 사용될 수 있으며, 보호기로는 DMT가 사용될 수 있다.Hydroquinone can be used as the deprotecting molecule providing material, hydrogen ion (H + ) can be used as the active deprotecting molecule, and DMT can be used as the protecting group.

도 6은 DNA 합성 기판 표면에 알루미늄 박막에 의해 나노웰이 형성된 아토리터 나노웰 어레이의 일 예를 보여 준다.Figure 6 shows an example of an atolith nanowell array in which nanowells are formed by an aluminum thin film on the surface of a DNA synthesis substrate.

구체적으로 도 6은 DNA 합성 기판 표면에 나노웰이 ~100 nm 두께와 직경을 갖도록 원형의 알루미늄 나노웰 어레이를 구성한 뒤 빛을 조사하여 DNA 합성을 진행하는 과정을 보여준다.Specifically, Fig. 6 shows the process of forming a circular aluminum nanowell array on the surface of a DNA synthesis substrate so that the nanowells have a thickness and diameter of ~100 nm, and then irradiating light to perform DNA synthesis.

본 발명에서, 상기 나노웰은 가로, 세로 및 높이가 각각 50 nm 내지 1 μm일 수 있으며, 상기 박막은 두께가 50 nm 내지 2 μm일 수 있다. 나노웰의 높이와 박막의 두께를 동일하게 만드는 것도 가능하다.In the present invention, the nanowell may have a width, length, and height of 50 nm to 1 μm, and the thin film may have a thickness of 50 nm to 2 μm. It is also possible to make the height of the nanowell and the thickness of the thin film the same.

상기 알루미늄 나노웰은 레이저 간섭 리소그래피 (laser interference lithography, LIL)을 이용하여 만들 수 있고, 나노비드 자가조립 리소그래피 (nanobead self-assembly lithography), 전자 빔 리소그래피 (Electron beam lithography, EBL), 집속 이온빔 리소그래피 (focused ion-beam lithography, FIB)를 이용하여 공정하는 것도 가능하다.The above aluminum nanowells can be created using laser interference lithography (LIL), and can also be processed using nanobead self-assembly lithography, electron beam lithography (EBL), and focused ion-beam lithography (FIB).

도 6을 참고하면, 박막에 의해 구획된 알루미늄 나노웰로 인해 DNA 합성 기판의 하단에서 조사된 빛이 전파되지 않고, DNA 합성 기판의 표면에 국한되는 것을 볼 수 있다.Referring to Figure 6, it can be seen that light irradiated from the bottom of the DNA synthesis substrate does not propagate due to the aluminum nanowells partitioned by the thin film, but is confined to the surface of the DNA synthesis substrate.

이렇게 광원부에서 조사된 빛이 DNA 합성 기판의 표면에 국한되면 반대편 기판에 흐릿한 이미지가 맺히거나, 빛이 반사되는 현상이 차단되며, 본 발명의 아토리터 나노웰 어레이로 DNA 합성 과정에서 빛 반사로 인한 문제를 원천 차단할 수 있다. 따라서, 본 발명의 일 예에 따른 나노웰 어레이를 사용하면 기존에 빛 반사로 인한 DNA 합성 오류를 방지하기 위해 사용하던 방법인 굴절률 매칭 (refractive index matching)을 위한 용액을 플로우 셀(flow cell)에 흘려주거나, 반대편 기판의 뒷부분에 무반사 (anti-reflecting) 물질을 채우는 과정을 생략할 수 있다.When the light irradiated from the light source is limited to the surface of the DNA synthesis substrate, a blurry image is formed on the opposite substrate, or the phenomenon of light being reflected is blocked, and the problem caused by light reflection during the DNA synthesis process can be fundamentally blocked with the atotorin nanowell array of the present invention. Therefore, by using the nanowell array according to an example of the present invention, the process of flowing a solution for refractive index matching, which is a method used in the past to prevent DNA synthesis errors caused by light reflection, into a flow cell or filling an anti-reflecting material into the back of the opposite substrate can be omitted.

도 7은 두께 20 nm, 직경 80 nm의 크로뮴 나노웰이 있는 기판에 365 nm의 UV 파장을 조사하였을 때 전파 프로파일 (propagation profile)을 Matlab으로 계산한 결과이다.Figure 7 shows the result of calculating the propagation profile using Matlab when irradiating a UV wavelength of 365 nm on a substrate having chromium nanowells with a thickness of 20 nm and a diameter of 80 nm.

기판의 아래쪽에서 조사된 빛이 합성 기판 표면에 국한되는 것을 확인할 수 있다.It can be confirmed that the light irradiated from the bottom of the substrate is confined to the surface of the synthetic substrate.

Claims (7)

DNA 합성이 일어나고, 빛이 투과할 수 있는 재질로 이루어진 기판부; 및A substrate portion in which DNA synthesis occurs and which is made of a material that allows light to pass through; and 상기 기판부에 형성된 나노웰 어레이를 포함하되,Including a nanowell array formed on the above substrate, 상기 나노웰은 박막에 의해 구획되고, 가로, 세로 및 높이가 각각 50 nm 내지 2 μm인, DNA 합성용 아토리터 나노웰 어레이.An atolytic nanowell array for DNA synthesis, wherein the nanowells are partitioned by a thin film and have a width, length, and height of 50 nm to 2 μm, respectively. 제1항에 있어서, 상기 기판부는 규소 (silicon), 질화 규소 (silicon nitride), 산화 규소 (silicon oxide), 유리 (glass) 및 석영 (quartz)으로 이루어진 군에서 선택되는 재질로 이루어지는, DNA 합성용 아토리터 나노웰 어레이.In the first paragraph, the substrate portion is an atotorin nanowell array for DNA synthesis, made of a material selected from the group consisting of silicon, silicon nitride, silicon oxide, glass, and quartz. 제1항에 있어서, 상기 박막은 알루미늄 (Al), 크로뮴 (Cr), 타이타늄 (Ti), 구리 (Cu), 금 (Au), 백금 (Pt) 및 은 (Ag)으로 이루어진 군에서 선택되는 재질인, DNA 합성용 아토리터 나노웰 어레이.In the first paragraph, the thin film is a material selected from the group consisting of aluminum (Al), chromium (Cr), titanium (Ti), copper (Cu), gold (Au), platinum (Pt), and silver (Ag), an atolith nanowell array for DNA synthesis. 제1항에 있어서, 상기 박막은 두께가 50 nm 내지 2 μm인, DNA 합성용 아토리터 나노웰 어레이.In the first aspect, the thin film has a thickness of 50 nm to 2 μm, an atotore nanowell array for DNA synthesis. DNA 합성이 일어나는 제1항 내지 제4항 중 어느 한 항의 아토리터 나노웰 어레이;An atolytic nanowell array according to any one of claims 1 to 4, wherein DNA synthesis occurs; 상기 아토리터 나노웰 어레이의 기판부에서 박막 방향으로 빛을 조사하는 광원부; 및A light source unit that irradiates light in the direction of a thin film from the substrate unit of the above-mentioned atoritor nanowell array; and 상기 광원부의 아토리터 나노웰 어레이로의 빛 조사 패턴을 제어하는 빛-공간 변조기;를 포함하는, DNA 합성기기.A DNA synthesis device, comprising a light-space modulator for controlling the light irradiation pattern to the atotolith nanowell array of the light source unit. 제5항에 있어서, 상기 빛-공간변조기는 포토마스크 (photomask), DMD (digital micromirror device) 또는 마이크로LED인, DNA 합성기기.A DNA synthesis device in claim 5, wherein the light-space modulator is a photomask, a digital micromirror device (DMD), or a microLED. 제5항에 있어서, 상기 나노웰의 가로 및 세로 길이는 상기 광원부에서 조사되는 파장보다 짧은 것인, DNA 합성기기.A DNA synthesis device in claim 5, wherein the horizontal and vertical lengths of the nanowell are shorter than the wavelength irradiated by the light source.
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