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WO2025051583A1 - Dispositif à semi-conducteur optoélectronique et procédé de fabrication d'un dispositif à semi-conducteur optoélectronique - Google Patents

Dispositif à semi-conducteur optoélectronique et procédé de fabrication d'un dispositif à semi-conducteur optoélectronique Download PDF

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Publication number
WO2025051583A1
WO2025051583A1 PCT/EP2024/073894 EP2024073894W WO2025051583A1 WO 2025051583 A1 WO2025051583 A1 WO 2025051583A1 EP 2024073894 W EP2024073894 W EP 2024073894W WO 2025051583 A1 WO2025051583 A1 WO 2025051583A1
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WO
WIPO (PCT)
Prior art keywords
filter element
semiconductor device
wavelength range
optoelectronic semiconductor
conversion element
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PCT/EP2024/073894
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English (en)
Inventor
Stefan Lange
Thorsten Schröder
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Ams Osram International GmbH
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Ams Osram International GmbH
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Publication of WO2025051583A1 publication Critical patent/WO2025051583A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient

Definitions

  • An optoelectronic semiconductor device is specified.
  • a method of manufacturing an optoelectronic semiconductor device is specified.
  • a task to be solved is to specify an optoelectronic semiconductor device with high ageing stability and/or conversion efficiency.
  • a method of manufacturing an optoelectronic semiconductor device is to be specified.
  • the optoelectronic semiconductor device comprises a semiconductor chip that, in operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface.
  • the optoelectronic semiconductor chip such for example a light-emitting diode chip, comprises an epitaxially grown semiconductor layer sequence having an active region adapted to generate electromagnetic radiation.
  • the active region has, for example, a pn junction, a double heterostructure, a single quantum well structure or a multiple quantum well structure.
  • the 2023PF00698 August 27, 2024 P2023,0874 WO N - 2 - semiconductor chip emits electromagnetic radiation from the ultraviolet wavelength range or from the visible wavelength range, particularly preferably from the blue wavelength range, during operation.
  • the semiconductor chip emits electromagnetic radiation with a peak wavelength in the wavelength range between 420 nm to 500 nm, both inclusive.
  • the optoelectronic semiconductor device comprises a color setting structure.
  • the color setting structure comprises a matrix material, a conversion element and a filter element.
  • the color setting structure consists of a matrix material, a conversion element and a filter element.
  • the color setting structure is arranged at least on the radiation exit surface of the semiconductor chip.
  • the color setting structure partially or completely surrounds the semiconductor chip.
  • the semiconductor chip is embedded in the color setting structure and/or in the matrix material.
  • the semiconductor chip is surrounded by the matrix material.
  • the surface of the semiconductor chip opposite the radiation exit surface is arranged on a carrier element for stabilization and is not surrounded by the color setting structure and/or the matrix material.
  • the semiconductor chip and the color setting structure are embedded in a housing.
  • the conversion element and the filter element can be arranged in the same layer or in different layers.
  • the conversion element is arranged in a layer which is in direct contact to the semiconductor chip and the filter element is arranged in a layer which is placed downstream of the layer with the conversion element.
  • the filter element and/or the conversion element can be embedded in the matrix material.
  • the matrix material is selected from the group of polysiloxanes.
  • Polysiloxanes are organosilicon compounds in which two silicon atoms are bonded to one another via an oxygen atom.
  • polysiloxanes have an organic group on the silicon atom.
  • polysiloxanes are more strongly crosslinked after curing compared to conventional silicones. In the liquid state, polysiloxanes exhibit a low viscosity. In addition, polysiloxanes exhibit a high thermal stability and stability of electromagnetic radiation of the semiconductor chip in the cured state.
  • the organic group is a methoxy, methyl, phenyl or phenoxy group.
  • the polysiloxane may also have multiple organic groups.
  • the organic group of the polysiloxanes has a preferential influence on the refractive index of the matrix material.
  • the matrix material comprises or is formed from a silicone, an epoxy, or a mixture of these materials.
  • the conversion element can be a phosphor, for example a ceramic phosphor and/or a quantum dot phosphor.
  • the phosphor can be in the form of phosphor particles.
  • the phosphor particles preferably comprise a crystalline, for example ceramic, host lattice into which foreign elements are introduced as activator elements.
  • the phosphor may be a ceramic material, for example.
  • the ceramic phosphor comprises a garnet phosphor.
  • the garnet phosphor is a YAG phosphor having the chemical formula Y 3 (Al,Ga) 5 O 12 :Ce or a 2023PF00698 August 27, 2024 P2023,0874 WO N - 4 - LUAG phosphor having the chemical formula Lu 3 (Al,Ga) 5 O 12 :Ce.
  • the ceramic phosphor may also comprise a nitride and/or an oxynitride phosphor.
  • the nitride or oxynitride phosphor may be, for example, an alkaline earth silicon (oxy- )nitride, an oxynitride, an aluminum oxynitride, a silicon nitride or a Sialon.
  • the ceramic phosphors are selected from the following group: Ce 3+ doped garnets such as YAG and LuAG, for example (Y,Lu,Gd,Tb) 3 (Al 1-x ,Ga x ) 5 O 12 :Ce 3+ ; Eu 2+ / and or Ce 3+ doped nitrides, such as (Ca,Sr)AlSiN 3 :Eu 2+ /Ce 3+ , Sr(Ca,Sr)Si 2 Al 2 N 6 :Eu 2+ /Ce 3+ (SCASN), (Sr,Ca)AlSiN 3 *Si 2 N 2 O:Eu 2+ /Ce 3+ , (Ca,Ba,Sr) 2 Si 5 N 8 :Eu 2+ /Ce 3+ , SrLiAl 3 N 4 :Eu 2+ /Ce 3+ , SrLi 2 Al 2 O 2 N 2 :Eu 2+
  • Mn 4+ doped fluorides for example (K,Na) 2 (Si,Ti)F 6 :Mn 4+ ; Eu 2+ or Ce 3+ doped litho-silicates, such as (Li,Na,K,Rb,Cs)(Li 3 SiO 4 ):E with E as Eu 2+ , Ce 3+ , or (Sr,Li)Li 3 AlO 4 :Eu 2+ /Ce 3+ or SrLi 3 AlO 4 :Eu 2+ /Ce 3+ .
  • the ceramic phosphors are selected from the following group: Ce 3+ doped garnets such as YAG and LuAG, for example (Y,Lu,Gd,Tb) 3 (Al 1-x ,Ga x ) 5 O 12 :Ce 3+ ; Ce 3+ doped nitrides, such as (Ca,Sr)AlSiN 3 :Ce 3+ , Sr(Ca,Sr)Si 2 Al 2 N 6 :Ce 3+ (SCASN), (Sr,Ca)AlSiN 3 *Si 2 N 2 O:Ce 3+ , (Ca,Ba,Sr) 2 Si 5 N 8 :Ce 3+ , SrLiAl 3 N 4 :Ce 3+ , SrLi 2 Al 2 O 2 N 2 :Ce 3+ ; Ce 3+ doped nitrides, for example (Ca,Sr)Al (1- 4x/3) Si (1+x) N
  • phosphors include, in particular, the following aluminum-containing and/or silicon- containing phosphor particles: (Ba 1-x-y Sr x Ca y )SiO 4 :Eu 2+ (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1), (Ba 1-x- y Sr x Ca y ) 3 SiO 5 :Eu 2+ (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1), Li 2 SrSiO 4 :Eu 2+ , Oxo- nitrides such as (Ba 1-x-y Sr x Ca y )Si 2 O 2 N 2 :Eu 2+ (0 ⁇ x ⁇ 1; 0 ⁇ y ⁇ 1), SrSiAl 2 O 3 N 2 :Eu 2+ , Ba 4-x Ca x Si 6 ON 10 :Eu 2+ (0 ⁇ x ⁇ 1), (Ba 1- x Sr x )Y 2 Si 2 Al
  • the conversion element converts at least the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range.
  • the second wavelength range is, preferably, different from the first wavelength range and e.g. comprises higher wavelengths than the first 2023PF00698 August 27, 2024 P2023,0874 WO N - 6 - wavelength range.
  • higher wavelengths is a synonym for longer wavelength.
  • the filter element comprises a higher transmission for radiation of the first wavelength range compared to a radiation having a higher wavelength.
  • the filter element is, for example, a material which has a higher absorption in the higher wavelength range than in the first wavelength range.
  • Higher wavelength means a wavelength range that is larger than the first wavelength range, for example larger than 520 nm.
  • the filter element has a high transmission for electromagnetic radiation in the wavelength range of blue and blue-green light.
  • the filter element has a high transmission for electromagnetic radiation in the wavelength range smaller or equal to 520 nm.
  • the filter element has a low transmission for electromagnetic radiation from the green-yellow wavelength range and longer wavelength light.
  • the filter element has a low transmission in the visible spectral range, for example in the wavelength range between 520 nm to 800 nm, inclusive.
  • the filter element has a high transmission for blue and blue- green light, for example ⁇ ⁇ ⁇ grenz , wherein ⁇ grenz is 520 nm.
  • the filter element has a low transmission for green-yellow and longer wavelength light in the visible spectral range, for example ⁇ grenz ⁇ ⁇ ⁇ 800 nm, wherein ⁇ grenz is 520 nm.
  • the exact choice of absorption properties and ⁇ grenz can be adapted to the target application.
  • a high value for ⁇ grenz results in a small shift of the color point compared to unfiltered optoelectronic devices.
  • a very low value for ⁇ grenz leads to a very high shift of the color point compared to unfiltered optoelectronic devices. However, this can lead to a negative impact on the overall efficiency of the device, as a higher proportion of the target emission, which is desirable in principle, is also filtered out.
  • Such filter elements can also be called short-pass filters. All technically established concepts for a filter element are conceivable for this application, for example in particular filter elements based on the principle of absorption or also interference filters. In addition to the absorption of electromagnetic radiation, the filter element shows, for example, an emission of electromagnetic radiation.
  • the optoelectronic semiconductor device comprises a semiconductor chip which, in operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface and a color setting structure comprising a matrix material, a conversion element and a filter element, wherein the conversion element converts at least the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range and the filter element comprises a higher transmission for radiation of the first wavelength range compared to a radiation having a higher wavelength.
  • the filter element is formed by a plurality of particles. The plurality of particles have preferably a diameter of between at least 1 nanometer to at most 100 micrometers, preferably at least 1 nm to at most 30 micrometers, both inclusive.
  • the filter element can be brought into a plurality of particles, preferably into a powder, by means of a grinding process.
  • the plurality of particles is embedded in the matrix material in which the conversion element is arranged.
  • the optoelectronic semiconductor device has a filter element which is formed by a plate.
  • “Plate” means, for example, that the filter element 2023PF00698 August 27, 2024 P2023,0874 WO N - 8 - is formed continuously and has no interruption.
  • the plate preferably consists of the filter element.
  • the plate is arranged, for example, downstream of the matrix material in which the conversion element is included.
  • the plate is preferably in direct contact with the matrix material.
  • the filter element is selected from the group of filter glass, BaCuSi 4 O 10 , (Sr,Ba,Ca)CuSi 4 O 10 , blue pigments or a combination thereof.
  • filter glasses are constructed like glasses with additional elements added to adjust the absorption properties.
  • the glass structure may be a silicate glass, borosilicate glass or soda-lime glass. Small amounts of metal oxides may be added to adjust the absorption properties.
  • the filter glass comprises transition metals such as Fe, Cu, Ni, Zn, Co, Cr, Mn.
  • a filter glass colored with Co and/or Cu can have suitable absorption properties and can be used as the filter glass.
  • the filter glass can be a soda-lime-silica glass colored with cobalt oxide or a soda-lime-silica glass colored with copper.
  • the filter element BaCuSi 4 O 10 preferably converts electromagnetic radiation from the first wavelength range and/or the second wavelength range into electromagnetic radiation of a third wavelength range.
  • the electromagnetic radiation from the third wavelength range is not visible or is only visible to a very small extent, to the human eye so that the color impression of the optoelectronic device is not influenced, or is influenced only to a very small extent.
  • the emission of the third wavelength range can be in the near infrared spectral range, for example.
  • the filter element BaCuSi 4 O 10 shows fluorescence properties in addition to the advantageous absorption.
  • the filter element BaCuSi 4 O 10 After excitation, by absorbed electromagnetic radiation, the filter element BaCuSi 4 O 10 emits in the near infrared spectral range. This property is technically advantageous compared to a pure absorption process. Due to 2023PF00698 August 27, 2024 P2023,0874 WO N - 9 - the emission in the third wavelength range, part of the absorbed energy is radiated out of the optoelectronic semiconductor device. Compared to a pure absorption process, the color setting structure heats up less. This advantageously leads to an optoelectronic semiconductor device having a reduced temperature during operation whereby its efficiency and long-term stability can be positively influenced.
  • the emission of the filter element BaCuSi 4 O 10 is in the near infrared spectral range and is therefore not visible to the human eye or only to a very small extent. In other words, the emission of the filter element BaCuSi 4 O 10 does not influence the color impression of the optoelectronic semiconductor device, or only to a very small extent.
  • the color setting structure comprises a matrix material, a conversion element, a plate and a plurality of particles, wherein the plate and the plurality of particles consist of the filter element.
  • the conversion element comprises or consists of phosphor particles that comprise the following formula(Y,Gd,Lu,Tb) 3 (Al,Ga) 5 O 12 :Ce.
  • the phosphor particles are preferably embedded in the matrix material.
  • the phosphor particles preferably have a diameter between 1 micrometer inclusive and 70 micrometers inclusive, particularly preferably between 3 micrometers inclusive and 50 micrometers inclusive.
  • the phosphor particles comprise the following formula (Lu 1-x Ce x )(Al 1-y Ga y ) 5 O 12, wherein 0 ⁇ x ⁇ 0.02 and 0.3 ⁇ y ⁇ 0.6.
  • the phosphor particles comprise the following formula (Lu 1-x Ce x )(Al 1-y Ga y ) 5 O 12, wherein 0 ⁇ x ⁇ 0.01 and 0.35 ⁇ y ⁇ 0.55.
  • the phosphor particles comprise the following formula (Lu 1-x Ce x )(Al 1-y Ga y ) 5 O 12, wherein 0 ⁇ x ⁇ 0.01 and 0.4 ⁇ y ⁇ 0.5. 2023PF00698 August 27, 2024 P2023,0874 WO N - 10 - Such phosphor particles show a blue-green emission in the emission spectrum when excited with blue light and a very high conversion efficiency. These phosphor particles have a comparatively high half-width of the emission. Therefore, the phosphor particles are combined with a filter element that absorbs undesired parts of the radiation, especially long wavelength parts. The resulting spectrum then reaches a target color point that would not be accessible without the filter element.
  • the filter element converts at least a part of the electromagnetic radiation of the first wavelength range and/or the electromagnetic radiation of the second wavelength range into electromagnetic radiation of a third wavelength range.
  • the filter element converts at least a part of the electromagnetic radiation of the second wavelength range into electromagnetic radiation of a third wavelength range.
  • the electromagnetic radiation of the third wavelength range is in the infrared spectral range.
  • the electromagnetic radiation of the third wavelength range is not visible, or only visible to a very small extent, to the human eye so that the color impression of the optoelectronic device is not influenced, or is only influenced to a very small extent. This property is technically advantageous compared to a pure absorption process.
  • the filter element and/or the color setting structure heats up less. This advantageously leads to the optoelectronic semiconductor device having a reduced temperature during operation, whereby its efficiency and long-term stability can be positively influenced.
  • the filter element and the conversion element are homogeneously distributed in the matrix material. The amount and configuration of the conversion element and the filter element are adjusted so that the mixed radiation emitted by the optoelectronic semiconductor device corresponds to the desired target color point.
  • the conversion element and the filter element are homogeneously distributed in the whole matrix material.
  • the color setting structure is arranged in a cavity.
  • the color setting structure surrounds the semiconductor chip in at least five directions. That means, that the semiconductor chip is arranged on a housing or on a carrier element and all of the other surfaces of the semiconductor chip are preferably in contact with the color setting structure.
  • the conversion element is sedimented at the bottom in the matrix material and the filter element is homogeneously distributed in the matrix material.
  • the conversion element is at the bottom of a cavity and the filter element is arranged above the conversion element.
  • the conversion element is arranged on the radiation exit surface of the semiconductor chip and on the bottom of the cavity.
  • the filter element can least convert a part of the electromagnetic radiation of the first wavelength range and the electromagnetic radiation of the second wavelength range into electromagnetic radiation of a third wavelength range and/or absorbs undesired parts of the electromagnetic radiation, especially long wavelength parts.
  • the filter element and the conversion element are embedded in the same matrix material.
  • the conversion element and the filter element are sedimented at the bottom, wherein the filter element is arranged downstream of the conversion element.
  • the conversion element is sedimented 2023PF00698 August 27, 2024 P2023,0874 WO N - 12 - first in the matrix material and the filter element is sedimented afterwards so that the conversion element is arranged on the radiation exit surface of the semiconductor chip and the filter element is arranged above the conversion element.
  • the filter element and the conversion element are embedded in the same matrix material.
  • the conversion element can convert the electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second wavelength range and the filter element can preferably convert the electromagnetic radiation of the second wavelength range into electromagnetic radiation of a third wavelength range.
  • the conversion element is homogeneously distributed in the matrix material and the filter element is arranged as a plate downstream of the conversion element and the matrix material. This preferably leads to the conversion of the electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second wavelength range by the conversion element and the electromagnetic radiation of the second wavelength range can be converted into electromagnetic radiation of the third wavelength range by the filter element.
  • the plate is arranged in such a way that it seals the cavity.
  • the filter element has a transmission of more than 50% in the wavelength range between 2023PF00698 August 27, 2024 P2023,0874 WO N - 13 - 350 nm to 480 nm, both inclusive. In other words, the filter element allows a part of the electromagnetic radiation in the wavelength range between 350 nm to 480 nm to pass through.
  • the filter element allows a part, at least 50 %, of the electromagnetic radiation from the blue wavelength range of the semiconductor chip to pass through.
  • the filter element has a transmission of less than 50% in the wavelength range between 590 nm and 650 nm, both inclusive.
  • the filter element absorbs at least a major part, at least 50 %, of the electromagnetic radiation.
  • the semiconductor chip and the color setting structure are arranged in a cavity.
  • the semiconductor chip is arranged on a carrier element or in a housing.
  • the semiconductor chip is in direct contact with the carrier element or the housing and with the color setting structure which is in the cavity.
  • the second wavelength range comprises a short wavelength part and a long wavelength part, wherein the filter element comprises a higher transmission for radiation of the short wavelength part compared to radiation of the long wavelength part.
  • the short wavelength part of the second wavelength range is particularly in a range between 430 nm and 550 nm, both inclusive.
  • the short wavelength part of the second wavelength range is in a range between 480 nm and 520 nm, both inclusive.
  • the long wavelength part of the second wavelength range is particularly in a range between 480 nm and 700 nm, both inclusive.
  • the long wavelength 2023PF00698 August 27, 2024 P2023,0874 WO N - 14 - part of the second wavelength range is in a range between 500 nm and 6300 nm, both inclusive.
  • the optoelectronic semiconductor device can be manufactured using the method described below. Features and embodiments implemented only in connection with the semiconductor device can also be used in the method and vice versa. According to one embodiment of the method of manufacturing an optoelectronic semiconductor device, a semiconductor chip which in operation emits electromagnetic radiation of a first wavelength range from a radiation exit surface is first provided.
  • a color setting structure comprising a conversion element, a filter element and a matrix material, wherein the conversion element converts at least the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range and a filter element comprises a higher transmission for radiation of the first wavelength range compared to radiation having a higher wavelength.
  • the color setting structure is preferably arranged in direct contact on the radiation exit surface of the semiconductor chip.
  • the color setting structure surrounds the side surfaces and the radiation exit surface of the semiconductor chip.
  • the conversion element is introduced into the matrix material and sedimented so that the conversion element is arranged at a bottom.
  • the conversion element comprises phosphor particles which are embedded in the matrix material.
  • a characteristic of a color setting structure applied by means of a sedimentation method is that all surfaces on which the conversion element and/or filter element can settle due to gravity are coated with the conversion element and/or filter element. Furthermore, the conversion element or filter element of a sedimented color setting structure are usually in direct contact with each other.
  • One idea of the present semiconductor device is to provide a semiconductor device which emits a color of electromagnetic radiation in the blue-green or cyan spectral range with low to medium color saturation. For these applications a narrow band blue green emitting chlorosilicate phosphor with the chemical formula Ca8Mg(SiO4)4Cl2:Eu or a blue green emitting SiON phosphor with the chemical formula BaSi2O2N2:Eu is used nowadays.
  • phosphors are usually used either alone or in combination with another phosphor such as a green-yellow emitting garnet phosphor.
  • another phosphor such as a green-yellow emitting garnet phosphor.
  • a blue green phosphor such as the above-mentioned chlorosilicate or SiON phosphor must be mixed in to achieve the target color points.
  • the blue-green chlorosilicate phosphor currently used may show, for example, the following limitations: - intrinsic instability towards water, which leads to aging effects in LEDs in continuous operation, - limited stability against high radiation densities, which leads to aging effects in LEDs in continuous operation, - halogen-containing host structure, which leads to risk of corrosion of other components of the LED package, for example interaction with a silver lead frame, - pronounced temperature quenching behaviour, which means a sharp drop in efficiency and large chromaticity shift during operation with increased device temperature, and - pronounced quenching effects at high current densities (droop).
  • the devices containing SiON phosphor may have the following weaknesses or disadvantages: - strongly limited stability against high radiation densities which leads to aging effects in LEDs in continuous operation, and - pronounced quenching effects at high current densities (droop).
  • the optoelectronic semiconductor device described herein describes a novel approach to achieve previously unattainable target colors using a conversion element in combination with a semiconductor chip and a selected filter element adapted to the conversion element.
  • the conversion element shows an emission spectrum by excitation with blue light in the blue green emission and a high conversion efficiency.
  • the filter element can advantageously absorb unwanted parts of the electromagnetic radiation, especially long wavelength parts. The resulting spectrum reaches a target color point that would not be accessible without the filter element.
  • the optoelectronic semiconductor chip described herein advantageously shows a high aging stability and conversion efficiency in operation, especially when operating under high temperature, radiation exposure and high power density.
  • the optoelectronic semiconductor device described herein shows a lower shift of the color point with changing temperature and current.
  • the semiconductor device is suitable for components with high power density due to lower quenching effects. For example, the lower shift of the color point with changing temperature and current occurs with phosphor particles doped with Ce 3+ . Further advantageous embodiments and further embodiments of the semiconductor device and the method result from the exemplary embodiments described below in connection with the figures.
  • Figures 1, 2, 3, 4 and 5 respectively show a schematic sectional view of an optoelectronic semiconductor device each according to an exemplary embodiment
  • Figure 6 shows the resulting color point of the optoelectronic semiconductor device V1_F according to an exemplary embodiment in comparison to the resulting color points of two comparative optoelectronic semiconductor devices V1 and V2
  • Figure 7 shows two transmission spectra, one of the filter element BG40 and one of the filter element BaCuSi 4 O 10
  • Figures 8 and 9 each show the resulting color points of the optoelectronic semiconductor device according to an exemplary 2023PF00698 August 27, 2024 P2023,0874 WO N - 18 - embodiment in comparison to the resulting color point of the comparative optoelectronic semiconductor device V1.
  • Figures 10 and 11 each show emission spectra of the optoelectronic semiconductor device each according to an exemplary embodiment
  • Figure 12 shows a schematic sectional view of the method of manufacturing an optoelectronic semiconductor device according to an exemplary embodiment.
  • Elements that are identical, similar or have the same effect are given the same reference signs in the figures.
  • the figures and the proportions of the elements shown in the figures are not to be regarded as true to scale. Rather, individual elements, in particular layer thicknesses, may be shown exaggeratedly large for better representability and/or understanding.
  • the optoelectronic semiconductor device 1 according to the exemplary embodiments of Figures 1 to 5 comprises a semiconductor chip 2 which in operation emits electromagnetic radiation of a first wavelength range from a radiation exit surface 3.
  • the optoelectronic semiconductor device 1 comprises a color setting structure 4 which comprises a matrix material 5, a conversion element 6 and a filter element 7, wherein the conversion element 6 converts at least the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range and the filter element 7 comprises a higher transmission for radiation of the first wavelength range compared to a radiation having a higher wavelength.
  • the semiconductor chip 2 preferably emits electromagnetic radiation of the first wavelength range, preferably from the 2023PF00698 August 27, 2024 P2023,0874 WO N - 19 - blue wavelength range.
  • the filter element 7 is configured in such a way that a part of the electromagnetic radiation, especially in the long wavelength range, can be absorbed.
  • the filter element 7 converts at least a part of the electromagnetic radiation of the first wavelength range and/or the electromagnetic radiation of the second wavelength range into electromagnetic radiation of a third wavelength range.
  • the electromagnetic radiation of the third wavelength range is in the infrared spectral range.
  • the proportion and configuration of the conversion element 6 and the filter element 7 is configured in such a way that the mixed emitted electromagnetic radiation of the optoelectronic semiconductor device 1 corresponds to the desired color point, preferably in the blue-green or cyan spectral region.
  • the conversion element 6 comprises or consists of phosphor particles with the following formula (Lu 1-x Ce x )(Al 1-y Ga y ) 5 O 12, wherein 0 ⁇ x ⁇ 0.02 and 0.3 ⁇ y ⁇ 0.6.
  • the semiconductor chip 2 and the color setting structure 4 are arranged in a housing 8 with a cavity 9.
  • Absorption filter elements can be used in these configurations.
  • the semiconductor chip 2 is connected with a bonding wire 10.
  • the filter element 7 is formed by a plurality of particles and in figures 4 and 5 the filter element 7 is formed by a plate.
  • the filter element 7 is selected from the group of filter glass and BaCuSi 4 O 10 . If the filter element 7 is a filter glass, then the filter glass can be milled into a powder by means of a grinding process. 2023PF00698 August 27, 2024 P2023,0874 WO N - 20 - In Figure 1 the filter element 7 and the conversion element 6 are homogeneously distributed in the matrix material 5.
  • the filter element 7 is formed by a plurality of particles.
  • the conversion element 6 is sedimented at the bottom in the matrix material 5 and the filter element 7 is homogeneously distributed in the matrix material 5.
  • “At the bottom” means that the radiation exit surface 3 of the semiconductor chip 2 is at least partially covered with the conversion element 6 and the bottom of the housing 8 is also at least partially covered with the conversion element 6.
  • Figure 3 shows the conversion element 6 and the filter element 7 which are sedimented at the bottom, wherein the filter element 7 is arranged downstream of the conversion element 6.
  • the filter element 7 can easily convert the electromagnetic radiation of the second wavelength range into electromagnetic radiation of a third wavelength range.
  • the conversion element 6 is homogeneously distributed in the matrix material 5 and the filter element 7 is arranged as a plate downstream of the conversion element 6 and the matrix material 5.
  • the plate seals the housing 8.
  • the plate is in direct contact to the matrix material 5.
  • the plate delimits the semiconductor device 1 from above and the housing 8 from below.
  • the filter element 7 is preferably a filter glass, preferably the filter glass BG40 of the company Schott.
  • the conversion element 6 is sedimented at the bottom and the filter element 7 is arranged as a plate downstream of the conversion element 6 and the matrix material 5.
  • the plate seals the housing 8.
  • the plate is in direct contact to the matrix material 5.
  • the plate delimits the semiconductor device 1 from above and the housing 8 from below.
  • the filter element 7 is preferably a filter glass, 2023PF00698 August 27, 2024 P2023,0874 WO N - 21 - preferably the filter glass BG40 of the company Schott.
  • Figure 6 shows the resulting color points of the optoelectronic semiconductor device 1 according to an exemplary embodiment in comparison to the resulting color points of two comparative optoelectronic semiconductor devices V1 and V2.
  • Figure 6 shows three binning schematics for cyan-emitting color on demand LEDs. In Figure 6 the color points of a first blue FB, a second blue SB and a third blue TB LED are shown.
  • the optoelectronic semiconductor devices V1 and V2 comprises a blue semiconductor chip 2, a conversion element 6 and a matrix material 5, without a filter element 7.
  • the conversion element 6 is homogeneously distributed in the matrix material 5.
  • the matrix material 5 is silicone.
  • the weight of the phosphor particles is varied in the range 0% to 60%, in each case weight percentage related to the conversion element 6.
  • the garnet phosphor which is used in the optoelectronic semiconductor device V2 corresponds approximately to the border case accessible with this phosphor material system at high conversion efficiency and the color point obtained with the optoelectronic semiconductor device V1 is shifted towards higher wavelength emission.
  • a further shift of the phosphor emission towards higher wavelength emission can be achieved by further decreasing the Ga content y and/or further increasing the Ce content x in the garnet phosphor.
  • FIG. 6 further shows that not all desired target color points can be addressed with a phosphor of the system (Lu 1- x Ce x )(Al 1-y Ga y ) 5 O 12 alone.
  • the third blue TB bin is not accessible, or only to a limited extent, as are parts of the second blue SB bin.
  • Figure 6 shows a further curve V1_F.
  • the color point is obtained by an optoelectronic semiconductor device 1 according to an exemplary embodiment.
  • the optoelectronic semiconductor device 1 comprises a semiconductor chip 2, a filter element 7, a matrix material 5 and a conversion element 6.
  • the emission of the optoelectronic semiconductor device 1, described in the curve V1_F can reach the outer areas of the third blue TBB and the second blue SB bins.
  • the curve V1_F is shifted towards shorter wavelength emission.
  • FIG. 7 the transmission is plotted against the wavelength ⁇ in nanometers.
  • Two transmission spectra of the filter elements F1 and F2 are shown, wherein F1 is BG40 of the company Schott and F2 is BaCuSi 4 O 10 .
  • the data for F1 were taken from the spectrum of FSR-BG40 bandpass and the data of F2 were estimated from a measurement of the diffuse reflectance of a powder sample approximating the reflectance as transmission.
  • the spectrum of F1 shows a transmission maximum between 430 nm and 550 nm and the spectrum of F2 shows a transmission maximum between 380 nm and 450 nm.
  • Figures 8 and 9 each show the resulting color points of the optoelectronic semiconductor device 1 according to an exemplary embodiment in comparison to the resulting color point of the comparative optoelectronic semiconductor device V1.
  • the color coordinate CIE-y is plotted against the color coordinate CIE-x.
  • the color points of the first blue FB, second blue SB and third blue TB bins are shown.
  • a filter exponent is varied from 0.1 to 1.
  • the phosphor particles have an amount of 30%.
  • a filter exponent is varied from 0.1 to 2.
  • the phosphor particles have an amount of 30%.
  • the curves F2-1, F2-0.5, F2-0.1, F1-2, F1-1, F1-0.5 and F1- 0.1 of Figure 8 and Figure 9 are simulations.
  • the procedure described below was used.
  • the emission spectra of the comparative optoelectronic semiconductor device V1 described in Figure 6 were used.
  • Three different concentrations of the phosphor particles in the matrix material 5 are used.
  • the emission spectra with the three different concentrations of the phosphor particles are multiplied with the filter transmission graphs F1 and F2 of figure 7.
  • an exponent was applied to the filter curve. This procedure was carried out for each wavelength ⁇ of the emission spectrum.
  • ⁇ _filtered ⁇ _unfiltered x transmission ( ⁇ ⁇ filter exponent .
  • Figures 8 and 9 it can be shown that when the filter exponent increases the emission is shifted towards shorter wavelength compared to the color point of the comparative optoelectronic semiconductor device V1.
  • Figure 10 and Figure 11 each show emission spectra where the emission E is plotted against the wavelength ⁇ .
  • Figure 10 shows an emission spectrum F1_1 obtained with a semiconductor device 1 with filter element 7 BG40 and filter exponent 1 according to an exemplary embodiment.
  • Figure 11 shows an emission spectrum F2_0.5 obtained with a semiconductor device 1 with filter element 7 BaCuSi 4 O 10 and filter exponent 0.5.
  • the further comparative emission spectra V1 of Figures 10 and 11 are obtained with a semiconductor device 1 comprising a semiconductor chip 2, a conversion element 6 and a matrix material 5 but no filter element 7.
  • the amount of the conversion element 6 in the matrix material 5 of the semiconductor device 1 is 30%. It can be seen that the emission of the optoelectronic semiconductor device 1 decreases in the wavelength range between 450 to 630 when using a filter element 7.
  • FIG 12 an exemplary embodiment of a method of manufacturing an optoelectronic device 1 with the method steps S1 to S2 is shown.
  • a semiconductor chip 2 which, in operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface 3, is provided.
  • the semiconductor chip 2 is arranged in a housing 8.
  • a color setting structure 4 comprising a conversion element 6, a filter element 7 and a matrix material 5, wherein the conversion element 6 converts at least the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and the filter element 7 comprises a higher transmission for radiation of the first wavelength range compared to a radiation having a higher wavelength, is provided.
  • the color setting structure 4 is arranged in a cavity 9. For example, the conversion element 6 is introduced into the matrix material 5 and sedimented, so that the conversion element 6 is arranged at a bottom.
  • the 2023PF00698 August 27, 2024 P2023,0874 WO N - 26 - filter element 7 can be sedimented in the matrix material 5, so that the filter element 7 is arranged downstream of the conversion element 6.
  • the filter element 7 can be added as particles or in the form of a plate.

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Abstract

L'invention concerne un dispositif à semi-conducteur optoélectronique (1) qui comprend : - une puce semi-conductrice (2) qui, en fonctionnement, émet un rayonnement électromagnétique d'une première plage de longueurs d'onde à partir d'une surface de sortie de rayonnement (3), et - une structure de réglage de couleur (4) comprenant un matériau de matrice (5), un élément de conversion (6) et un élément filtrant (7), l'élément de conversion (6) convertissant au moins le rayonnement électromagnétique de la première plage de longueurs d'onde en un rayonnement électromagnétique d'une seconde plage de longueurs d'onde, et l'élément filtrant (7) comprenant une transmission supérieure pour un rayonnement de la première plage de longueurs d'onde par rapport à un rayonnement présentant une longueur d'onde supérieure. L'invention concerne en outre un procédé de fabrication d'un dispositif à semi-conducteur optoélectronique.
PCT/EP2024/073894 2023-09-04 2024-08-27 Dispositif à semi-conducteur optoélectronique et procédé de fabrication d'un dispositif à semi-conducteur optoélectronique Pending WO2025051583A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102023123733.0 2023-09-04
DE102023123733 2023-09-04

Publications (1)

Publication Number Publication Date
WO2025051583A1 true WO2025051583A1 (fr) 2025-03-13

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PCT/EP2024/073894 Pending WO2025051583A1 (fr) 2023-09-04 2024-08-27 Dispositif à semi-conducteur optoélectronique et procédé de fabrication d'un dispositif à semi-conducteur optoélectronique

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WO (1) WO2025051583A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8093610B2 (en) * 2006-09-29 2012-01-10 Osram Opto Semiconductors Gmbh Optoelectronic component
US20120300432A1 (en) * 2010-03-01 2012-11-29 Panasonic Corporation Led lamp, led illumination device, and led module
US9062853B2 (en) * 2010-07-12 2015-06-23 National University Corporation Nagoya University Broadband infrared light emitting device
CN106537619A (zh) * 2014-06-11 2017-03-22 欧司朗光电半导体有限公司 光电子半导体组件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8093610B2 (en) * 2006-09-29 2012-01-10 Osram Opto Semiconductors Gmbh Optoelectronic component
US20120300432A1 (en) * 2010-03-01 2012-11-29 Panasonic Corporation Led lamp, led illumination device, and led module
US9062853B2 (en) * 2010-07-12 2015-06-23 National University Corporation Nagoya University Broadband infrared light emitting device
CN106537619A (zh) * 2014-06-11 2017-03-22 欧司朗光电半导体有限公司 光电子半导体组件

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