WO2024225873A1 - Ingot growth device and method for controlling ingot growth - Google Patents

Abstract

This ingot growth device comprises: an ingot growth furnace including a main crucible; an auxiliary melting furnace that supplies molten silicon to the ingot growth furnace; a silicon feeder including a solid silicon transfer path connected to the auxiliary melting furnace, and a transfer member that is connected to the solid silicon transfer path and transfers solid silicon; and a controller that controls at least one of the ingot growth furnace, the auxiliary melting furnace, and the silicon feeder, wherein the ingot growth furnace further includes a melt gap measuring device, and the controller can increase the solid silicon supply amount of the silicon feeder or increase the output of the auxiliary melting furnace if the melt gap is less than a predetermined normal melt gap range, and can decrease the solid silicon supply amount of the silicon feeder or lower the output of the auxiliary melting furnace if the melt gap exceeds the normal melt gap range.

Description

Ingot growth device and ingot growth control method

The present disclosure relates to an ingot growth device and an ingot growth control method.

The Czochralski crystal growth method is one of the methods for manufacturing single-crystal silicon wafers, which are the raw materials for semiconductors. Silicon is placed in a crucible and heated to melt the silicon. Then, a single-crystal seed is brought into contact with the molten silicon and rotated in one direction while being raised to grow an ingot with a predetermined diameter. Among the Czochralski crystal growth methods, the method of continuously injecting silicon material into the crucible to grow an ingot is called the continuous growth Czochralski method.

A method of melting solid silicon in an auxiliary melting furnace and then supplying it to an ingot growth furnace to continuously grow ingots is being studied. However, when supplying molten silicon to an ingot growth furnace, it is difficult to maintain the interface of the molten silicon at a constant level, so an ingot growth device of this type has not been properly commercialized.

In particular, in order to supply the melted solid silicon to the ingot growth furnace, the melt gap, which is the distance between the interface of the molten silicon contained in the main crucible and the reflector, must be maintained at a certain height. In this process, the amount of solid silicon fed into the auxiliary melting furnace, the amount of molten silicon supplied from the auxiliary melting furnace to the ingot growth furnace, the amount of molten silicon contained in the ingot growth furnace, and the growth speed of the ingot must be considered. In addition, there is a problem that the molten silicon cools and solidifies again during the process of moving from the auxiliary melting furnace to the ingot growth furnace, which deteriorates the quality and yield of the ingot.

The background technology described above is technical information that the inventor possessed for deriving the present invention or acquired during the process of deriving the present invention, and cannot necessarily be considered as publicly known technology disclosed to the general public prior to the application for the present invention.

An ingot growth device and an ingot growth control method according to embodiments of the present disclosure can provide an ingot growth device and an ingot growth control method capable of improving the quality and yield of an ingot by maintaining a melt gap of molten silicon in a main crucible constant while supplying molten silicon to an ingot growth furnace.

However, these tasks are exemplary, and the tasks that the present disclosure seeks to solve are not limited to these.

An ingot growth device includes an ingot growth furnace including a main crucible, an auxiliary melting furnace supplying molten silicon to the ingot growth furnace, a solid silicon transfer path connected to the auxiliary melting furnace, and a silicon feeder connected to the solid silicon transfer path and including a transfer member for transferring the solid silicon, and a controller controlling at least one of the ingot growth furnace, the auxiliary melting furnace, and the silicon feeder, wherein the ingot growth furnace further includes a melt gap measuring device measuring a melt gap, which is a height between an interface of molten silicon accommodated in the main crucible and a reflector above the main crucible, and wherein the controller can increase a solid silicon supply amount of the silicon feeder or increase an output of the auxiliary melting furnace when the melt gap is below a predetermined normal melt gap range, and can decrease a solid silicon supply amount of the silicon feeder or lower an output of the auxiliary melting furnace when the melt gap exceeds the normal melt gap range.

The above controller can control the amount of the solid silicon supplied by controlling at least one of the control factors including the power, vibration period and vibration intensity of the transfer member which is a vibrator.

The above ingot growth furnace further includes an impression wire having a seed connected to an end thereof and an impression device for impression or rotating the impression wire, wherein the controller can control at least one of a rotation speed and an impression speed of the impression wire by the impression device when the melt gap is out of the normal melt gap range.

The above ingot growth furnace includes a transfer path including a holding heater for supplying molten silicon from the auxiliary melting furnace and transferring it to the main crucible, and the controller can operate the transfer member and simultaneously increase the output of the holding heater to a temperature-raising output.

The above controller can output an alarm signal when the temperature increase output of the maintenance heater does not satisfy the normal temperature increase output range or when the temperature increase output of the maintenance heater does not reach the normal temperature increase output range within a predetermined time from the time the transfer member is operated.

The above controller can operate the maintenance heater while the transfer member is not operating, but maintain the output of the maintenance heater at a rest output greater than 0 and lower than the normal temperature-rising output range.

A method for producing a single crystal silicon wafer, comprising: supplying molten silicon to an ingot growth furnace; and growing single crystal silicon while heating the molten silicon, wherein the supplying molten silicon to the ingot growth furnace comprises: supplying solid silicon from a silicon feeder to an auxiliary melting furnace; melting the solid silicon in the auxiliary melting furnace; and supplying the melted solid silicon to the ingot growth furnace. The step of growing the single crystal silicon comprises: measuring a melt gap of the molten silicon accommodated in a main crucible of the ingot growth furnace; and the step of measuring the melt gap comprises: increasing the solid silicon supply amount of the silicon feeder or increasing the output of the auxiliary melting furnace when the measured melt gap is below a normal melt gap range, and reducing the solid silicon supply amount of the silicon feeder or lowering the output of the auxiliary melting furnace when the measured melt gap exceeds the normal melt gap range.

The above ingot growth furnace further includes an impression wire having a seed connected to an end thereof, and an impression device for impression or rotating the impression wire, and in the step of measuring the melt gap, if the melt gap is out of a normal melt gap range, the impression device can control at least one of the rotation speed and the impression speed of the impression wire.

The above ingot growth furnace includes a transfer path including a holding heater for supplying molten silicon from the auxiliary melting furnace and transferring it to the main crucible, and the silicon feeder includes a transfer member for transferring the solid silicon, and in the step of supplying the molten solid silicon to the ingot growth furnace, if the temperature increase output of the holding heater does not satisfy the normal temperature increase output range or the temperature increase output of the holding heater does not reach the normal temperature increase output range within a predetermined time from the time the transfer member is operated, the controller can perform feedback control so that the temperature increase output of the holding heater satisfies the normal temperature increase output range.

The above controller can operate the maintenance heater while the transfer member is not operating, but maintain the output of the maintenance heater at a rest output greater than 0 and lower than the normal temperature-rising output range.

Other aspects, features and advantages other than those described above will become apparent from the following detailed description, claims and drawings for practicing the invention.

The ingot growth device and the ingot growth control method according to the embodiments of the present disclosure can produce ingots of excellent quality by measuring the melt gap of an ingot growth furnace and controlling the melt gap to be maintained at an appropriate level using a controller. In particular, the ingot growth device and the ingot growth control method can determine whether the melt gap is below or exceeds a normal melt gap range, and control the supply amounts of solid silicon and molten silicon accordingly to feedback control the melt gap.

The ingot growth device and the ingot growth control method according to embodiments of the present disclosure can improve the quality of the ingot by heating the molten silicon supplied from the auxiliary melting furnace to the ingot growth furnace, thereby preventing the molten silicon from solidifying or the temperature from dropping. In particular, the ingot growth device and the ingot growth control method can optimize the temperature raising/lowering operation of the heater and increase the reliability of the device by controlling the heater of the transport path in conjunction with the supply of solid silicon.

Figure 1 schematically illustrates an ingot growth device.

Figure 2 shows the connection status of the ingot growth furnace and the auxiliary melting furnace.

Figure 3 shows the connection status of the auxiliary melting furnace and the silicon feeder.

Figure 4 shows the connection status of the ingot growth furnace and the silicon feeder.

Figure 5 shows the interior of the ingot growth furnace.

Figure 6 illustrates the first transport route in detail.

Figure 7 shows the interior of the auxiliary melting furnace.

Figure 8 shows the interior of the silicon feeder.

Figure 9 briefly shows the control block diagram of the controller.

Figure 10 briefly illustrates the melt gap control flow diagram.

Figure 11 briefly shows the output control flow diagram of the maintenance heater.

Figure 12 shows a graph of the output of the maintenance heater over time.

Figure 13 shows a time-dependent output graph of a maintenance heater according to another embodiment of the present invention.

An ingot growth device includes an ingot growth furnace including a main crucible, an auxiliary melting furnace supplying molten silicon to the ingot growth furnace, a solid silicon transfer path connected to the auxiliary melting furnace, and a silicon feeder disposed on one side of the solid silicon transfer path and including a transfer member for transferring the solid silicon, and a controller controlling at least one of the ingot growth furnace, the auxiliary melting furnace, and the silicon feeder, wherein the ingot growth furnace further includes a melt gap measuring device measuring a melt gap, which is a height between an interface of molten silicon accommodated in the main crucible and a reflector disposed above the main crucible, and wherein the controller can increase a solid silicon supply amount of the silicon feeder or increase an output of the auxiliary melting furnace when the melt gap is below a predetermined normal melt gap range, and can decrease a solid silicon supply amount of the silicon feeder or lower an output of the auxiliary melting furnace when the melt gap exceeds the normal melt gap range.

The embodiments of the present disclosure can be understood by referring to the description and drawings of the invention. The described embodiments can have various modifications and can be implemented in different forms and are not limited to the embodiments described in the present specification. In addition, each feature of the various embodiments of the present disclosure can be combined in part or in whole with each other. Each embodiment can be implemented independently of each other or in relation to each other. The described embodiments are provided as examples so that the present disclosure can be complete and thorough, and completely convey the spirit of the present disclosure to those skilled in the art. The present disclosure can be replaced within the spirit and technical scope of the present disclosure with all modifications, equivalents, and substitutions. Therefore, processes, elements, and techniques that are not necessary for those skilled in the art for a complete understanding of the embodiments of the present disclosure may not be described.

Unless otherwise stated throughout the attached drawings and specification, the same reference numerals, letters or combinations thereof indicate the same components, and thus, redundant descriptions are omitted. In addition, in order to clearly explain the present invention, parts that are not related to the explanation are omitted.

The relative sizes of elements, layers, and areas in the drawings may be exaggerated for clarity. The use of hatching and/or shading in the attached drawings is generally provided to clarify boundaries between adjacent elements. Therefore, the presence or absence of hatching or shading does not imply a desirable form or requirement for any particular material, material property, dimension, proportion, commonality between the drawing elements, and/or any other characteristic, property, or attribute of the elements unless otherwise specified.

Various embodiments are described herein with reference to cross-sectional examples, which are schematic illustrations of embodiments and/or intermediate structures. Therefore, the shape of the drawings may vary, for example, as a result of manufacturing techniques and/or tolerances. In addition, the specific structural or functional descriptions disclosed herein are merely examples for explaining embodiments according to the concept of the present invention. Therefore, the embodiments disclosed herein should not be construed as being limited to the shape of the regions illustrated, and include, for example, deviations in shape due to manufacturing.

The areas depicted in the drawings are schematic in nature and their shapes are not intended to be limiting and are not intended to be illustrative of actual shapes of the device areas. Furthermore, as will be appreciated by those skilled in the art, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure.

Numerous specific details are set forth in the specification to provide a thorough understanding of the various embodiments. However, various embodiments may be practiced without these specific details or with one or more of the details. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring the various embodiments.

To facilitate the discussion herein, spatially relative terms such as “below,” “above,” “lower,” “top,” and the like may be used to describe the relationship of one element or feature to another, as illustrated in the drawings. The spatially relative terms are intended to encompass various orientations of the device in use or operation in addition to the orientations depicted in the drawings. For example, if the device in the drawings were flipped over, another element or feature described as “below” or “lower” would be oriented “above” the other element or feature. Thus, the exemplary terms “below” and “lower” can encompass both the above and below orientations. The device can be oriented in other orientations (e.g., rotated 90 degrees or in other directions) and the spatially relative descriptions used herein should be interpreted accordingly. Likewise, when a first part is described as being disposed “above” a second part, this means that the first part is disposed above or below the second part.

Also, the expression "in plan view" means when an object is viewed from above, and the expression "in schematic cross-section" means when a schematic cross-section is taken by cutting the object vertically. The term "in side view" means that the first object can be above or below or to the side of the second object, or vice versa. Additionally, the term "overlapping" or "superimposing" can include layer, laminate, plane, extension, covering, or partially covering, or any other suitable term that a person of ordinary skill in the art would understand and understand. The expression "does not overlap" can include meanings such as "away from" or "spaced from" and any other suitable equivalents recognized and understood by a person of ordinary skill in the art. The terms "plane" and "surface" can mean that the first object can directly or indirectly face the second object. When a third object is between a first object and a second object, the first object and the second object face each other, but can be understood as indirectly opposing each other.

When an element, layer, region or component is referred to as being "formed by," "connected to," or "coupled to," another element, layer, region or component, it can be directly formed by, connected to, or coupled with the element, layer, region or component, or formed by, connected to, or coupled with another element, layer, region or component indirectly. Additionally, "formed by," "connected to," or "coupled" can collectively refer to direct or indirect bonding or connection of elements, layers, regions or components, and integral or non-integral bonding or connection, such that more than one element, layer, region or component may be present. For example, when an element, layer, region or component is referred to as being "electrically connected to," or "electrically coupled to," another element, layer, region or component, it can be directly electrically connected or coupled to the other element, layer, region or component, or other elements, layers, regions or components may be present. However, "direct connection" or "direct bonding" means that one component is directly connected or bonded to another component without an intermediate component, or is on another component. In addition, in the present specification, when a part of a layer, film, region, guide plate, etc. is formed on another part, the direction of formation is not limited to the upper direction, and includes that the part is formed on the side or the lower side. On the other hand, when a part of a layer, film, region, guide plate, etc. is formed "under" another part, it includes not only the case where the part is "directly under" the other part, but also the case where there is another part between the part and the other part. Meanwhile, other expressions that describe the relationship between components, such as "between," "directly between," or "adjacent to" and "directly adjacent to" may be interpreted similarly. In addition, when an element or layer is referred to as being "between" two elements or layers, it may be the only element between the two elements or layers, or there may be another element between them.

For the purposes of this specification, phrases such as "at least one or more" or "either" do not limit the order of the individual elements. For example, phrases such as "at least one of X, Y, and Z", "at least one of X, Y or Z", "at least one selected from the group consisting of X, Y, and Z" can include X alone, Y alone, Z alone, or any combination of two or more of X, Y, and Z. Similarly, phrases such as "at least one of A and B" and "at least one of A or B" can include A, B, or A and B. The term "and/or" as used herein generally includes any combination of one or more of the associated list items. For example, phrases such as "A and/or B" can include A, B, or A and B.

Although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers, and/or sections, such elements, components, regions, layers, and/or sections are not limited by such terms. Such terms are used to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Thus, a first element, component, region, layer, or section described below may be referred to as a second element, component, region, layer, or section without departing from the spirit and scope of the present invention. Describing an element as a "first" element does not require or imply the presence of a second element or other elements. The terms "first," "second," etc. may also be used herein to distinguish different categories or sets of elements. For clarity, the terms "first," "second," etc. may each represent a "first category (or first set)," a "second category (or second set)," etc.

The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a" and "an" are intended to include the plural forms as well, and the plural forms are intended to include the singular form, unless the context clearly indicates otherwise. The terms "comprises," "includes," and "having" when used herein are meant to specify the presence of stated features, integers, or steps. These expressions do not preclude the presence or addition of one or more other functions, steps, operations, components, and/or groups thereof.

Where one or more embodiments may be implemented differently, a particular process sequence may be performed differently from the order described. For example, two processes described in succession may be performed substantially simultaneously or in the reverse order from the order described.

The terms "substantially", "about", "approximately" and similar terms are used as terms of approximation rather than degree, and mean satisfying the inherent range of variation (e.g., due to limitations of the measurement system) of the measured or calculated value. For example, "about" can mean within one or more standard deviations, or within ±30%, 20%, 10%, or 5% of the stated value.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms defined in commonly used dictionaries, such as terms defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and/or this specification, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

FIG. 1 schematically illustrates an ingot growth device (10), FIG. 2 illustrates a connection state between an ingot growth furnace (100) and an auxiliary melting furnace (200), FIG. 3 illustrates a connection state between an auxiliary melting furnace (200) and a silicon feeder (300), FIG. 4 illustrates a connection state between an ingot growth furnace (100) and a silicon feeder (300), FIG. 5 illustrates the interior of an ingot growth furnace (100), FIG. 6 illustrates a first transfer path (150) in detail, FIG. 7 illustrates the interior of an auxiliary melting furnace (200), FIG. 8 illustrates the interior of a silicon feeder (300), and FIG. 9 briefly illustrates a control block diagram of a controller (400).

Referring to FIGS. 1 to 9, the ingot growth device (10) is a device for growing an ingot (IG) that is a raw material for a wafer, and may be, for example, a device for manufacturing a silicon (Si) or gallium arsenide (GaAs) single crystal ingot. The ingot (IG) manufactured by the ingot growth device (10) may be manufactured into a single crystal silicon wafer for a solar cell. For example, the ingot growth device (10) may be a single crystal silicon ingot growth device using the Czochralski method.

For example, an ingot growth furnace (100) including a main crucible (110), an auxiliary melting furnace (200) for supplying molten silicon (MS) to the ingot growth furnace (100), a solid silicon transfer path (320) connected to the auxiliary melting furnace (200), and a silicon feeder (300) including a transfer member (330) disposed on one side of the solid silicon transfer path (320) for transferring solid silicon (S), a controller (400) for controlling at least one of the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300), and the ingot growth furnace (100) further includes a melt gap measuring device (180) for measuring a melt gap, which is a height between an interface of molten silicon (MS) accommodated in the main crucible (110) and a reflector (170) located above the main crucible (110), and the controller (400) for measuring the melt If the gap is less than a predetermined normal melt gap range, the solid silicon supply amount of the silicon feeder (300) may be increased or the output of the auxiliary melter (200) may be increased, and if the melt gap exceeds the normal melt gap range, the solid silicon supply amount of the silicon feeder (300) may be reduced or the output of the auxiliary melter (200) may be lowered.

The ingot growth device (10) may include an ingot growth furnace (100), an auxiliary melting furnace (200), a silicon feeder (300), a controller (400), a first connector (500), and a second connector (600).

The ingot growth furnace (100) can receive molten silicon (MS) from the auxiliary melting furnace (200) and grow it into an ingot. The ingot growth furnace (100) can grow single crystal silicon by heating the molten silicon (MS) to a predetermined temperature and rotating it in one direction (for example, clockwise or counterclockwise in FIG. 5). The single crystal silicon can be pulled upward from the ingot growth furnace (100) and grown vertically. The inside of the ingot growth furnace (100) can be maintained in a vacuum or an inert gas atmosphere such as helium or argon.

The ingot growth furnace (100) may include a main crucible (110), a first main heater (120), a first auxiliary heater (130), an impression wire (140), a first transfer path (150), an opening (160), a reflector (170), a melt gap measuring device (180), and an impression device (190).

The main crucible (110) is located inside the ingot growth furnace (100) and can heat and melt silicon. For example, as shown in FIG. 5, the main crucible (110) has a concave shape downward and can accommodate molten silicon (MS) inside. The main crucible (110) can receive molten silicon (MS) from the auxiliary melting furnace (200) through the first transfer path (150) or can receive solid silicon (S) from the silicon feeder (300). In addition, the main crucible (110) can be made of a material with excellent heat resistance, such as quartz.

The first main heater (120) is located around the main crucible (110) or is connected to the main crucible (110) and can heat the main crucible (110) to maintain the molten silicon (MS) accommodated inside the main crucible (110) in a liquid state. For example, as shown in FIG. 5, one or more first main heaters (120) can be located on the lower outer side of the main crucible (110). The first main heater (120) is a resistance-type heater that generates heat when current is applied to heat the main crucible (110). In addition, the first main heater (120) can form a separate magnetic field to circulate the molten silicon (MS) accommodated in the main crucible (110) to control the oxygen concentration.

The first auxiliary heater (130) can be spaced apart from the main crucible (110) and surround the main crucible (110). The first auxiliary heater (130), like the first main heater (120), is a resistance-type heater that generates heat when current flows and can additionally heat the main crucible (110). The first auxiliary heater (130) can be selectively operated depending on the amount of molten silicon (MS) accommodated in the main crucible (110) and/or the growth rate of the ingot (IG).

The first main heater (120) and the first auxiliary heater (130) can have their power and output controlled by the controller (400).

An impression wire (140) is inserted through an opening (160) formed at the top of an ingot growth furnace (100), and a seed (s) can be connected to the bottom. The impression wire (140) can be rotated and raised at a predetermined speed by an impression device (190). The impression wire (140) can be lowered so that the seed (s) comes into contact with the molten silicon (MS) of the main crucible (110), and then raised upward while being rotated in one direction (for example, clockwise or counterclockwise in FIG. 5) by the impression device (190). Accordingly, an ingot (IG) can grow downward from the seed (s).

The first transfer path (150) is a passage connected to the ingot growth furnace (100), and when the ingot growth furnace (100) is connected to the auxiliary melting furnace (200), molten silicon (MS) can be supplied from the auxiliary melting furnace (200). The first transfer path (150) is a square or tubular conduit inserted into the side of the ingot growth furnace (100), and the outlet (151) can be arranged above the main crucible (110). The first transfer path (150) is inclined downward toward the main crucible (110), and molten silicon (MS) supplied from the auxiliary melting furnace (200) can flow into the main crucible (110) through the first transfer path (150) and the outlet (151).

Alternatively, when the ingot growth furnace (100) is connected to the silicon feeder (300), the first transfer furnace (150) can receive solid silicon (S) from the silicon feeder (300). Likewise, the solid silicon can be introduced into the main crucible (110) through the outlet (151) and melted.

The first transfer path (150) may have an outlet (151) located inside the ingot growth furnace (100) and an inlet (152) located outside the ingot growth furnace (100). For example, the first transfer path (150) may have an outlet (151) located above the main crucible (110) so that molten silicon (MS) flows directly into the main crucible (110). Additionally, the inlet (152) may be connected to an auxiliary melting furnace (200) or a silicon feeder (300).

The first transport path (150) may be located inside the first connector (500). For example, as shown in FIGS. 5 and 7, the first transport path (150) may be located at least partially inside the first connector (500), with the outlet (151) and the inlet (152) being exposed to the outside of the first connector (500).

The first transfer path (150) may include a maintenance heater (153). The maintenance heater (153) may surround at least a portion of the first transfer path (150) and heat the first transfer path (150) so that the molten silicon (MS) supplied from the auxiliary melting furnace (200) does not cool down and solidify again while moving along the first transfer path (150). Accordingly, the temperature difference between the molten silicon (MS) contained in the main crucible (110) and the molten silicon (MS) supplied from the first transfer path (150) may be minimized. Alternatively, the maintenance heater (153) may preheat the solid silicon (S) supplied from the silicon feeder (300) so that it may be melted more quickly in the ingot growth furnace (100).

For example, the maintenance heater (153) is a resistance-type heater that generates heat when current is supplied to heat the first transport path (150). It can wrap around the outer surface of the first transport path (150) along the longitudinal direction of the first transport path (150) (for example, the X-axis direction of FIG. 6). For example, the maintenance heater (153) can be a metal coil that wraps around the first transport path (150).

The maintenance heater (153) can be controlled by the controller (400). For example, the controller (400) can control the power and output of the maintenance heater (153) by considering the amount of solid silicon (S) supplied from the silicon feeder (300), the timing of injection of the solid silicon (S), and/or the amount of molten silicon (MS) supplied from the auxiliary melting furnace (200) and the timing of injection of the molten silicon (MS).

The maintenance heater (153) can operate in conjunction with the silicon feeder (300). For example, the output of the maintenance heater (153) can be controlled according to the amount of solid silicon (S) supplied from the silicon feeder (300) to the auxiliary melting furnace (200). The controller (400) can control the transfer member (330) and/or the silicon injector (340) of the silicon feeder (300) to adjust the amount of solid silicon (S) transferred from the solid silicon transfer path (320) to the auxiliary melting furnace (200). When the transfer member (330) is a vibrator, the controller (400) can calculate the solid silicon supply amount of the silicon feeder (300) based on at least one of the control factors including the power (on/off state), vibration intensity, and vibration cycle of the power of the transfer member (330). And, considering the calculated solid silicon supply amount, the controller (400) can increase or decrease the output of the maintenance heater (153) so that the melt gap is within the normal melt gap range.

The first conveying path (150) may further include a first load cell (154). For example, as shown in FIG. 6, the first load cell (154) is mounted on the first conveying path (150) and can measure the weight of molten silicon (MS) supplied from the auxiliary melting furnace (200) and transmit it to the controller (400). The controller (400) can determine whether an appropriate amount of molten silicon (MS) is supplied to the ingot growth furnace (100) based on the weight measured by the first load cell (154). If the weight measured by the first load cell (154) is out of the normal range, the controller (400) can increase or decrease the temperature of the second main heater (220) and the second auxiliary heater (230) of the auxiliary melting furnace (200), or increase or decrease the supply amount of solid silicon (S) of the silicon feeder (300).

A reflector (170) can surround an ingot (IG) on the inside of an ingot growth furnace (100). The reflector (170) is located above the main crucible (110) and can prevent the heat of the main crucible (110), the first main heater (120), and the first auxiliary heater (130) from being directly applied to the ingot (IG).

For example, the reflector (170) may be spaced apart from the molten silicon (MS) contained in the main crucible (110) by a height H at the bottom. The height H means a melt gap and may vary depending on the amount of molten silicon (MS) contained in the main crucible (110).

The melt gap measuring device (180) is located in the ingot growth furnace (100) adjacent to the main crucible (110) and can measure the melt gap. For example, the melt gap measuring device (180) can use a vision camera to photograph the interface between the bottom of the reflector (170) and the molten silicon (MS), measure the melt gap, and transmit the image to the controller (400). Alternatively, the melt gap measuring device (180) can measure the melt gap using a laser or ultrasonic waves.

The impression device (190) is placed on the upper part of the ingot growth furnace (100) and can rotate and raise the ingot (IG). For example, as shown in FIG. 5, the impression device (190) can be inserted into the interior of the ingot growth furnace (100) through the opening (160) and connected to the impression wire (140). A seed (s) is connected to an end of the impression wire (140), and the ingot (IG) can grow from the seed (s) by rotating and raising the impression wire (140) at a predetermined speed by the impression device (190).

The raising device (190) can be controlled by the controller (400) in terms of rotation direction, rotation speed, and raising speed. For example, the controller (400) can control the rotation direction, rotation speed, and raising speed of the raising device (190) in consideration of the diameter of the ingot (IG). Alternatively, the controller (400) can control the raising device (190) in consideration of the melt gap. For example, when the melt gap is less than the normal melt gap range, that is, when the amount of molten silicon (MS) accommodated in the main crucible (110) is small, the rotation speed and/or the raising speed of the raising device (190) can be reduced. Accordingly, the ingot (IG) can grow while maintaining a constant diameter.

The auxiliary melting furnace (200) can supply molten silicon (MS) to the ingot growth furnace (100). As shown in FIGS. 1 to 3, the auxiliary melting furnace (200) can be connected to the ingot growth furnace (100) via the first connector (500). Alternatively, the auxiliary melting furnace (200) can be connected to the silicon feeder (300) via the second connector (600). Accordingly, the auxiliary melting furnace (200) can receive solid silicon from the silicon feeder (300), melt it, generate molten silicon (MS), and supply the molten silicon (MS) to the ingot growth furnace (100).

The auxiliary melting furnace (200) may include an auxiliary crucible (210), a second main heater (220), a second auxiliary heater (230), a partition (240), a second transfer path (250), a first hopper (260), a discharge port (270), a support rod (280), and a guide (290).

The auxiliary crucible (210) can accommodate solid silicon (S) fed from the silicon feeder (300) and melt the solid silicon (S). For example, as shown in FIG. 7, the auxiliary crucible (210) can have a deep U-shaped cross-section to accommodate solid silicon (S) and molten silicon (MS). The upper part of the auxiliary crucible (210) is closed by a cover (212) and can be connected to the first hopper (260) through the inlet (211). The auxiliary crucible (210) can include the same or different material as the main crucible (110).

The inlet (211) is a passage through which the solid silicon (S) supplied from the silicon feeder (300) flows into the auxiliary crucible (210), and may be formed at the upper portion of the auxiliary crucible (210). The inlet (211) may be formed to be offset to one side of the auxiliary crucible (210). For example, as shown in FIG. 7, the inlet (211) may be located on the opposite side of the partition wall (240) and/or the second transport path (250) with respect to the central axis of the auxiliary crucible (210). Accordingly, the solid silicon fed through the inlet (211) from the first hopper (260) may be located at the greatest possible distance from the partition wall (240) and the second transport path (250). In addition, it is possible to prevent unmelted solid silicon or impurities (P) included in the solid silicon from flowing into the second transport path (250) beyond the partition wall (240).

The auxiliary crucible (210) may further include a cover (212) and a second load cell (213). For example, as shown in FIG. 7, the cover (212) may cover the upper part of the auxiliary crucible (210) and may include an inlet (211) on the inside. For example, the cover (212) may have a disc shape corresponding to the auxiliary crucible (210) and may have an inlet (211) formed on the inside so that solid silicon (S) may be introduced. A partition wall (240) may extend downward from the cover (212). The second load cell (213) may be attached to the bottom of the auxiliary crucible (210) and may measure the weight of the auxiliary crucible (210) and transmit it to the controller (400). The controller (400) may calculate the weight of the molten silicon (MS) and the solid silicon (S) contained in the auxiliary crucible (210) based on the measured weight. The controller (400) can determine whether an appropriate amount of solid silicon (S) is supplied to the auxiliary crucible (210) or whether an appropriate amount of molten silicon (MS) is maintained in the auxiliary crucible (210) based on the weight measured by the second load cell (213). If the weight measured by the second load cell (213) is out of the normal range, the controller (400) can increase or decrease the temperature of the second main heater (220) and the second auxiliary heater (230) of the auxiliary melting furnace (200), or increase or decrease the supply amount of solid silicon (S) of the silicon feeder (300).

The second main heater (220) is adjacent to the auxiliary crucible (210) or attached to the auxiliary crucible (210) and can heat the auxiliary crucible (210) to melt the solid silicon (S) contained therein. For example, the second main heater (220) has a shape corresponding to the auxiliary crucible (210) and can surround the bottom and a part of the side of the auxiliary crucible (210) at the bottom of the auxiliary crucible (210).

The second auxiliary heater (230) may be located on the outside of the auxiliary crucible (210) so as to surround the auxiliary crucible (210). The second auxiliary heater (230) may have a cylindrical shape with open upper and lower portions, and the auxiliary crucible (210) may be located inside the second auxiliary heater (220). The second main heater (220) and the second auxiliary heater (230) may be electric heating heaters.

The partition wall (240) is located inside the auxiliary crucible (210) and can prevent solid silicon (S) and impurities (P) of the solid silicon (S) from flowing into the ingot growth furnace (100) through the second transfer path (250). For example, as shown in FIG. 7, the partition wall (240) can extend downward from the upper surface of the auxiliary crucible (210). The partition wall (240) can be spaced to one side from the central axis of the auxiliary crucible (210) adjacent to the second transfer path (250). Therefore, even if some of the solid silicon (S) and impurities (P) fed into the auxiliary crucible (210) from the first hopper (260) sink below the surface of the molten silicon (MS), the partition wall (240) blocks the second transfer path (250) to prevent the solid silicon (S) and impurities (P) from flowing into the second transfer path (250).

The partition wall (240) may extend across the auxiliary crucible (210). For example, as shown in FIG. 7, the partition wall (240) is arranged such that both ends in the longitudinal direction are positioned between the inner surface of the auxiliary crucible (210) without passing through the center of the auxiliary crucible (210). Therefore, the partition wall (240) may extend between two points on the inner surface of the auxiliary crucible (210) facing each other, and may include a shape like a chord. Here, the partition wall (240) may not be fixed to the inner surface of the auxiliary crucible (210), but may be fixed to a cover (212) provided on the upper portion of the auxiliary crucible (210). Therefore, a gap exists between both ends of the partition wall (240) and the inner surface of the auxiliary crucible (210), and solid silicon (S) and impurities (P) may accumulate in the gap.

In the auxiliary crucible (210), solid silicon and impurities (P) have relatively low densities and mainly float on the surface of the water, and may be present mainly at the edge along the inner side of the auxiliary crucible (210). Therefore, solid silicon and impurities (P) are concentrated in the gap (2401) between the partition (240) and the auxiliary crucible (210), and may play a role in focusing other solid silicon and impurities (P).

The lower end of the bulkhead (240) may be located lower than the lower end of the inlet (251) of the second transport path (250). Accordingly, the solid silicon (S) and impurities (P) adjacent to the bulkhead (240) can be more reliably blocked from flowing into the second transport path (250).

The baffle (240) may be arranged offset from the central axis of the auxiliary crucible (210) toward the second transfer path (250). For example, as shown in FIG. 7, the baffle (240) may be adjacent to the inner surface of the auxiliary crucible (210) rather than the center of the auxiliary crucible (210).

The second transfer path (250) is connected to the auxiliary crucible (210) and can transfer molten silicon (MS) to the first transfer path (150). For example, as shown in FIG. 7, the second transfer path (250) can be extended downwardly from one side of the auxiliary crucible (210) adjacent to the partition wall (240). In a state where the auxiliary melting furnace (200) is connected to the ingot growth furnace (100), the second transfer path (250) can be connected to the first transfer path (150). For example, as shown in FIG. 7, the second transfer path (250) can be partially inserted into the inlet (152) of the first transfer path (150). The lower end of the second transfer path (250) can be above the lower end of the partition wall (240).

The second transfer path (250) may be located on the opposite side of the inlet (211) based on the central axis of the auxiliary crucible (210).

The first hopper (260) is located above the auxiliary crucible (210) and can supply solid silicon supplied from the silicon feeder (300) to the auxiliary crucible (210). For example, as shown in FIG. 6, the first hopper (260) may include a discharge port (270) connected to the silicon feeder (300). In addition, the first hopper (260) may be connected to the auxiliary crucible (210) through the inlet (211) and may be coaxial with the central axis of the inlet (211). The solid silicon (S) discharged from the discharge port (270) may be fed into the auxiliary crucible (210) through the inlet (211) via the first hopper (260) and melted.

The first hopper (260) has a cylindrical shape and may have a truncated cone shape with the lower portion inclined inward. Solid silicon discharged from the discharge port (270) may be fed into the inlet (211) along the inclined surface of the lower portion.

The support rod (280) is inserted into the interior of the first hopper (260) and can be connected to the upper end of an auxiliary melting furnace (200) that is not shown. In addition, a guide (290) can be connected to the lower end of the support rod (280).

The guide (290) can disperse the solid silicon (S) discharged from the discharge port (270) so that the solid silicon (S) is not loaded biased to one side within the first hopper (260). For example, as shown in FIG. 7, the guide (290) can have a trapezoidal shape with a cross-sectional area that gradually increases downward and has inclined surfaces on both sides. The solid silicon (S) discharged from the discharge port (270) can be dispersed and dropped to both sides based on the central axis of the first hopper (260) along the inclined surfaces of the guide (290).

The silicon feeder (300) can supply solid silicon (S) to the ingot growth furnace (100) or the auxiliary melting furnace (200). For example, as shown in FIG. 3, the silicon feeder (300) is connected to the auxiliary melting furnace (200) to supply solid silicon (S) to the auxiliary melting furnace (200), and the auxiliary melting furnace (200) can melt the solid silicon (S) and supply it as molten silicon (MS) to the ingot growth furnace (100). Or, as shown in FIG. 4, the silicon feeder (300) can be directly connected to the ingot growth furnace (100) to supply solid silicon (S) to the ingot growth furnace (100).

The silicon feeder (300) may include a second hopper (310), a solid silicon transfer path (320), and a transfer member (330).

The solid silicon (S) fed into the second hopper (310) moves to the solid silicon transfer path (320) through the connection port (311). The solid silicon transfer path (320) is a square or tubular conduit extending in one direction (for example, the Y-axis direction of FIG. 8), and the outlet (321) may face the first hopper (260). In addition, the transfer member (330) may surround the solid silicon transfer path (320) or transfer the solid silicon (S) from below the solid silicon transfer path (320). For example, the transfer member (330) may be a vibrator, may be located on the bottom of the solid silicon transfer path (320), and may vibrate the solid silicon (S) inside to move it. In addition, the controller (400) can control the supply amount of solid silicon (S) by controlling at least one of the control factors including the power (on/off state) of the power of the transfer member (330), the vibration intensity, and the vibration period.

The outlet (321) of the solid silicon transport path (320) may be located above the guide (290). In addition, the outlet (321) of the solid silicon transport path (320) may correspond to the discharge port (270). Accordingly, the solid silicon (S) discharged from the solid silicon transport path (320) may fall to the guide (290) and then be fed into the first hopper (260).

The silicon feeder (300) may further include a silicon injector (340) and a third load cell (350). The silicon injector (340) may inject solid silicon (S) into the second hopper (310) near the second hopper (310). The silicon injector (340) may inject solid silicon (S) into the second hopper (310) under the direction of a predetermined program or a controller (400). For example, the controller (400) may control the amount of solid silicon (S) injected from the silicon injector (340) to control the melt gap. In the drawing, the silicon injector (340) is shown as being located next to the second hopper (310), but is not limited thereto. The silicon injector (340) may also be located above the second hopper (310).

The third load cell (350) is located at the bottom of the solid silicon transport path (320) and can measure the weight of the solid silicon (S) inside the solid silicon transport path (320). Then, the controller (400) can determine whether an appropriate amount of solid silicon (S) is supplied to the solid silicon transport path (320) based on the weight measured by the third load cell (350). If the weight measured by the third load cell (350) is out of the normal range, the controller (400) can increase or decrease the supply amount of the solid silicon (S) of the silicon feeder (300).

The ingot growth device (10) is modularized so that each component can be assembled and disassembled in different combinations. For example, the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300) can be freely assembled and disassembled from each other. For example, the ingot growth furnace (100) and the auxiliary melting furnace (200) can be assembled to each other, the auxiliary melting furnace (200) and the silicon feeder (300) can be assembled to each other, or the ingot growth furnace (100) and the silicon feeder (300) can be assembled to each other. In addition, the ingot growth furnace (100) and the auxiliary melting furnace (200) or the auxiliary melting furnace (200) and the silicon feeder (300) or the ingot growth furnace (100) and the silicon feeder (300) can be separated from each other while being assembled. Additionally, the ingot growth furnace (100), the auxiliary melting furnace (200) and the silicon feeder (300) can all be assembled together.

The ingot growth device (10) can be modularized so that the included components can be assembled and disassembled with each other. That is, by modularizing the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300), the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300) can all be assembled as needed, and the solid silicon can be melted through the auxiliary melting furnace (200) and then supplied to the ingot growth furnace (100). Alternatively, the solid silicon can be supplied directly from the silicon feeder (300) to the ingot growth furnace (100) without going through the auxiliary melting furnace (200). In addition, the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300) can be separated, respectively, to easily perform maintenance and repair work.

The controller (400) is connected to the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300) by wires and/or wirelessly to control the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300). For example, as shown in FIG. 1, the controller (400) may be on a support frame and adjacent to the auxiliary melting furnace (200) and/or the silicon feeder (300). For example, the controller (400) may include a processor for various operations, a memory in which information for controlling the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300) is stored in advance, and a communication module for transmitting and receiving signals with the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300). In addition, the controller (400) can control the rotation and pulling speed of the pulling device (190) of the ingot growth furnace (100), the temperature of the first main heater (120) and the first auxiliary heater (130), and the temperature of the maintenance heater (153). In addition, the controller (400) can control the temperature of the second main heater (220) and the second auxiliary heater (230) of the auxiliary melting furnace (200). In addition, the controller (400) can control the solid silicon input amount of the silicon feeder (300) and the power, intensity, and cycle of the transfer member (330).

The controller (400) may utilize a direct circuit structure that executes each control function through one or more microprocessors or other control devices, such as a memory, a processor, a logic circuit, a look-up table, etc. The controller (400) may be implemented as a part of a module, program, or code that includes one or more executable instructions for executing specific logic functions. The controller (400) may include or be implemented by a processor, such as a central processing unit, that executes each function or a microprocessor, etc. The controller (400) may include a communication device that can transmit and receive data with an external device, etc. The communication device may include one or more combinations of a digital modem, an RF modem, an antenna circuit, a Wi-Fi chip, and related software and/or firmware.

The controller (400) can adjust the melt gap to the normal melt gap range by controlling the solid silicon supply amount of the silicon feeder (300) or the molten silicon supply amount of the auxiliary melter (200) when the melt gap is out of the set normal melt gap range.

For example, as shown in Fig. 10, the controller (400) can set a normal melt gap range. The normal melt gap range can be appropriately selected according to the target diameter of the ingot (IG), etc., and can be a value input by the user or a preset value.

The following melt gap measuring device (180) can measure the melt gap and transmit it to the controller (400). The controller (400) can compare the melt gap with a pre-stored normal melt gap range. If the measured melt gap satisfies the normal melt gap range, the controller (400) can terminate the melt gap control operation.

If the measured melt gap is smaller than the lower limit of the normal melt gap range, the controller (400) may increase the solid silicon supply amount of the silicon feeder (300) or increase the molten silicon supply amount of the auxiliary melter (200) to increase the melt gap. That is, the controller (400) may increase the supply amount of solid silicon (S) fed from the silicon injector (340) or increase the cycle or intensity of the transfer member (330) so that a larger amount of solid silicon (S) is transferred to the auxiliary melter (200). Alternatively, the controller (400) may increase the output of the second main heater (220) and/or the second auxiliary heater (230) of the auxiliary melter (200) so as to increase the amount of molten silicon (MS) supplied from the auxiliary melter (200) to the ingot growth furnace (100).

If the measured melt gap is lower than the lower limit of the normal melt gap range, the controller (400) may additionally perform a compensation circuit operation of the ingot growth furnace (100). For example, if the measured melt gap is lower than the normal melt gap range, the diameter of the ingot (IG) may not be maintained at an appropriate level. To prevent this, the controller (400) may control the pulling device (190) to reduce the rotation speed or pulling speed of the pulling wire (140), thereby maintaining the diameter of the ingot (IG) at an appropriate level.

Alternatively, if the measured melt gap is higher than the upper limit of the normal melt gap range, the controller (400) may reduce the solid silicon supply amount of the silicon feeder (300) or reduce the molten silicon supply amount of the auxiliary melter (200) to lower the melt gap. That is, the controller (400) may reduce the supply amount of solid silicon (S) fed from the silicon injector (340) or reduce the cycle or intensity of the transfer member (330) so that a smaller amount of solid silicon (S) is transferred to the auxiliary melter (200). Alternatively, the output of the second main heater (220) and/or the second auxiliary heater (230) of the auxiliary melter (200) may be reduced to reduce the amount of molten silicon (MS) supplied from the auxiliary melter (200) to the ingot growth furnace (100).

If the measured melt gap is higher than the upper limit of the normal melt gap range, the controller (400) may additionally perform a compensation circuit operation of the ingot growth furnace (100). For example, if the measured melt gap is higher than the normal melt gap range, the diameter of the ingot (IG) may not be maintained at an appropriate level. The controller (400) may control the pulling device (190) to increase the rotation speed or pulling speed of the pulling wire (140), thereby maintaining the diameter of the ingot (IG) at an appropriate level.

And the controller (400) can send a melt gap measurement signal to the melt gap measuring device (180) again. If the melt gap measured by the melt gap measuring device (180) satisfies the normal melt gap range, the controller (400) can terminate the melt gap control, and if it does not satisfy the normal melt gap range, the controller can perform the melt gap control operation again.

The controller (400) can control the output of the maintenance heater (153). For example, as shown in FIG. 11, the controller (400) can set a normal output range of the maintenance heater (153). The normal output range can be appropriately selected depending on the amount of molten silicon (MS) supplied from the silicon feeder (300) to the auxiliary melting furnace (200) and/or the amount of molten silicon (MS) supplied from the auxiliary melting furnace (200) to the ingot growth furnace (100), and can be a value input by the user or a preset value.

A measurement sensor equipped in the next maintenance heater (153) or a separate measurement sensor can measure the actual output of the maintenance heater (153) and transmit it to the controller (400). The controller (400) compares the measured output with the normal output range, and if the measured output satisfies the normal output range, the controller (400) can terminate the output control operation.

If the measured output is less than the lower limit of the normal output range, or greater than the upper limit of the normal output range, or if the measured output does not reach the normal output range within a predetermined first time, the controller (400) can visually notify the user of this through a display, or notify the user of this through sound or light, etc.

For example, the output of the maintenance heater (153) over time can be represented as in Fig. 12. In a state where solid silicon (S) is not supplied from the silicon feeder (300) to the auxiliary melting furnace (200), that is, in a state where the transfer member (330) is not operating, the maintenance heater (153) can maintain the idle output P0. Here, the controller (400) maintains the idle output P0 to be greater than 0, so that when the solid silicon (S) is input, the output of the maintenance heater (153) can be increased more quickly to the normal output range, and the first transfer path (150) can be heated more quickly.

The controller (400) can notify the user when the measured resting output does not satisfy the normal output range, more specifically, the normal resting output range. The normal output range has a predetermined upper limit and a lower limit based on the target resting output P0, and the difference between the upper limit and the lower limit can be expressed as ΔP0. When the measured resting output is out of the normal output range, the controller (400) notifies the user through a display, light, sound, etc., and the user can control the controller (400) or the maintenance heater (153) so that the resting output satisfies the normal output range. Alternatively, the controller (400) directly feedback-controls the maintenance heater (153) so that the resting output satisfies the normal output range.

At time T1, the controller (400) can operate the transfer member (330) to move the solid silicon (S) to the auxiliary melting furnace (200). At the same time, the controller (400) can control the maintenance heater (153) to increase the output to the temperature-raising output P1. That is, at time T1, the controller (400) can control the transfer member (330) and the maintenance heater (153) simultaneously. Accordingly, the output of the maintenance heater (153) can gradually increase from the idle output P0 to the temperature-raising output P1, as shown in FIG. 12.

The controller (400) can notify the user when the measured temperature increase output does not satisfy the normal output range, for example, the normal temperature increase output range. The normal output range has a predetermined upper limit and a lower limit based on the target temperature increase output P1, and the difference between the upper limit and the lower limit can be expressed as Δ1. When the measured temperature increase output is out of the normal output range, the controller (400) notifies the user through a display, light, sound, etc., and the user can control the controller (400) or the maintenance heater (153) so that the temperature increase output satisfies the normal output range. Alternatively, the controller (400) can directly feedback-control the maintenance heater (153) so that the temperature increase output P1 satisfies the normal output range.

The controller (400) can determine whether the temperature-raising output reaches the normal output range within a predetermined time period. For example, as shown in FIG. 12, if the temperature-raising output reaches the normal output range within a first time period ΔT1 based on a predetermined time period after time T1, the controller (400) can determine that the maintenance heater (153) is operating normally. On the other hand, if the temperature-raising output does not reach the normal output range within ΔT1 (even if the temperature-raising output reaches the normal output range after ΔT1) or if the temperature-raising output reaches the normal output range before ΔT1, the controller (400) can determine that the maintenance heater (153) is not operating normally. In this case, the controller (400) notifies the user through a display, light, or sound, and the user can control the controller (400) or the maintenance heater (153).

When the maintenance heater (153) operates in the normal temperature-raising output range and the time T2 arrives, the controller (400) can terminate the operation of the transfer member (330) and, at the same time, adjust the output of the maintenance heater (153) back to the idle output P0. Accordingly, the output of the maintenance heater (153) can gradually decrease from the temperature-raising output P1 to the idle output P0, as shown in Fig. 12.

The controller (400) can determine whether the measured idle output reaches the normal output range within a predetermined time period. For example, as shown in FIG. 12, if the measured idle output reaches the normal output range within a second time period ΔT2 based on a predetermined time period after time T2, the controller (400) can determine that the maintenance heater (153) is operating normally. On the other hand, if the idle output does not reach the normal output range within ΔT2 (even if the idle output reaches the normal output range after ΔT2) or if the idle output reaches the normal output range before ΔT2, the controller (400) can determine that the maintenance heater (153) is not operating normally. In this case, the controller (400) notifies the user through a display, light, or sound, and the user can control the controller (400) or the maintenance heater (153).

In this way, the controller (400) can control the operation of the maintenance heater (153) in conjunction with the operation of the silicon feeder (300). In particular, the controller (400) can control the output of the maintenance heater (153) according to the operation of the transfer member (330), thereby optimizing the output required for heating the molten silicon (MS). In addition, if the output of the maintenance heater (153) does not satisfy the normal output range and time range, the controller (400) can notify the user of this and perform feedback control to stably supply the molten silicon (MS) to the ingot growth furnace (100).

In another embodiment, the output of the maintenance heater (153) may be intermittently changed. As shown in FIG. 13, the output of the maintenance heater (153) may be increased to the temperature-raising output P1 while maintaining the rest output P0 at T1. Then, the output may be lowered to the rest output P0 at T2. Here, the controller (400) may determine whether the rest output satisfies the normal rest output range within a first time ΔT1 from time T1 and whether the temperature-raising output satisfies the normal temperature-raising output range within a second time ΔT2 from time T2, thereby determining whether the maintenance heater (153) is operating normally. The controller (400) may determine that the maintenance heater (153) is not operating normally if the output measured within ΔT1 or ΔT2 does not reach the normal output range (even if the output measured after ΔT1 or ΔT2 reaches the normal output range). And the controller (400) notifies the user through a display, light or sound, and the user can control the controller (400) or control the maintenance heater (153).

The controller (400) can control the amount of solid silicon supplied and/or the amount of molten silicon supplied. For example, the controller (400) can receive information about the weight of molten silicon (MS) moving through the first conveying path (150) from the first load cell (154). In addition, the controller (400) can receive information about the weight of molten silicon (MS) and solid silicon (S) accommodated in the auxiliary crucible (210) from the second load cell (213). Considering the state of the melt gap and the ingot (IG), if the weight of the molten silicon (MS) is large or small, the controller (400) can control the transfer member (330) or the silicon injector (340) of the silicon feeder (300) to adjust the supply amount of solid silicon (S), or control the output of the second main heater (220) and the second auxiliary heater (230) of the auxiliary melting furnace (200) to adjust the supply amount of the molten silicon (MS).

In addition, the controller (400) can receive information about the weight of the solid silicon (S) moving along the solid silicon transport path (320) from the third load cell (350). The controller (400) can reduce or increase the amount of the solid silicon (S) fed from the silicon feeder (340) when the weight of the solid silicon (S) is large or small, considering the state of the melt gap and the ingot (IG).

The first connector (500) and the second connector (600) can connect the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300). For example, the first connector (500) is connected to the ingot growth furnace (100) and connected to the auxiliary melting furnace (200) or the silicon feeder (300). For example, as shown in FIG. 2, the first connector (500) can have one side connected to the side of the ingot growth furnace (100) and the other side connected to the side of the auxiliary melting furnace (200). The first connector (500) can be installed so that the first transport path (150) of the ingot growth furnace (100) and the second transport path (250) of the auxiliary melting furnace (200) are located on the inside.

Or, as shown in Fig. 4, the first connector (500) may have one side connected to the side of the ingot growth furnace (100) and the other side connected to the side of the silicon feeder (300). The first connector (500) may be installed so that the first transport path (150) of the ingot growth furnace (100) and the solid silicon transport path (320) of the silicon feeder (300) are located on the inside. The installation position of the first connector (500) may be set by adjusting the height of a supporter or frame supporting the auxiliary melting furnace (200) and the silicon feeder (300). The first connector (500) includes a connecting member (510), and the connecting member (510) may be an airlock-type connecting means.

The first connector (500) can be fixed to the ingot growth furnace (100) at one end. Accordingly, the ingot growth furnace (100) can be dismantled while connected to the auxiliary melting furnace (200) and then connected to another auxiliary melting furnace (200) or a silicon feeder (300). Alternatively, the ingot growth furnace (100) can be dismantled while connected to the silicon feeder (300) and then connected to another silicon feeder (300) or an auxiliary melting furnace (200).

As shown in FIG. 3, the second connector (600) may have one side connected to the side of the auxiliary melting furnace (200) and the other side connected to the side of the silicon feeder (300). The second connector (600) may be installed so that the solid silicon transfer path (320) of the silicon feeder (300) is located on the inside. The installation position of the second connector (600) may be set by adjusting the height of a supporter or frame supporting the auxiliary melting furnace (200) and the silicon feeder (300). The second connector (600) includes a connecting member (610), and the connecting member (610) may be an airlock-type connecting means.

The second connector (600) may have one side fixed to the auxiliary melting furnace (200). Accordingly, the auxiliary melting furnace (200) may be dismantled while connected to the silicon feeder (300) and then connected to another silicon feeder (300). Or, conversely, the second connector (600) may have one side fixed to the silicon feeder (300). Accordingly, the silicon feeder (300) may be dismantled while connected to the auxiliary melting furnace (200) and then connected to another auxiliary melting furnace (200).

The following ingot growth control method is described. The above-described ingot growth control method can utilize an ingot growth device (10). It can include a step of supplying molten silicon (MS) to an ingot growth furnace (100) and a step of growing single crystal silicon while heating the molten silicon (MS). In addition, the step of supplying molten silicon (MS) to the ingot growth furnace (100) can include a step of supplying solid silicon (S) from a silicon feeder (300) to an auxiliary melting furnace (200), a step of melting the solid silicon (S) in the auxiliary melting furnace (200), and a step of supplying the molten solid silicon (S) to the ingot growth furnace (100). In addition, the step of growing single crystal silicon includes a step of measuring a melt gap of molten silicon (MS) accommodated in a main crucible (110) of an ingot growth furnace (100), and the step of measuring the melt gap may include increasing the solid silicon supply amount of the silicon feeder (300) or increasing the output of the auxiliary melting furnace (200) if the measured melt gap is below a normal melt gap range, and reducing the solid silicon supply amount of the silicon feeder (300) or lowering the output of the auxiliary melting furnace (200) if the measured melt gap exceeds the normal melt gap range.

First, the ingot growth furnace (100), the auxiliary melting furnace (200), and the silicon feeder (300) of the ingot growth device (10) are connected. The ingot growth furnace (100) and the auxiliary melting furnace (200) are connected through the first connector (500), and the auxiliary melting furnace (200) and the silicon feeder (300) are connected through the second connector (600). The first transport path (150) of the ingot growth furnace (100) connects the inlet (152) to the second transport path (250) of the auxiliary melting furnace (200), and the outlet (151) is arranged above the main crucible (110). In addition, the solid silicon transport path (320) of the silicon feeder (300) is arranged so that the outlet (321) corresponds to the discharge port (270) of the auxiliary melting furnace (200).

The melt gap control operation is performed by the following controller (400). The melt gap control operation may include the following steps.

First, a normal melt gap range is set using a controller (400). The normal melt gap range can be appropriately selected according to the specifications of the ingot (IG), and can be a preset value or a value input by the user.

The following melt gap measuring device (180) measures the melt gap. The melt gap measuring device (180) measures the distance between the interface of the molten silicon (MS) contained in the main crucible (110) and the bottom of the reflector (170) to measure the melt gap.

The controller (400) then receives information about the measured melt gap from the melt gap measuring device (180) and determines whether the measured melt gap satisfies the normal melt gap range. If the measured melt gap satisfies the normal melt gap range, the controller (400) terminates the melt gap control operation. If the measured melt gap falls below the lower limit of the normal melt gap range, the controller (400) increases the output of the second main heater (220) and/or the second auxiliary heater (230) of the auxiliary melting furnace (200) to increase the melt gap. Alternatively, the controller (400) increases the amount of solid silicon (S) transferred from the silicon injector (340) of the silicon feeder (300) or increases the strength or cycle of the transfer member (330). Alternatively, the controller (400) may perform a compensation circuit operation of the ingot growth furnace (100) to control the pulling device (190) to reduce the rotation speed or pulling speed of the pulling wire (140), thereby maintaining the diameter of the ingot (IG) at an appropriate level.

If the measured melt gap exceeds the upper limit of the normal melt gap range, the controller (400) lowers the output of the second main heater (220) and/or the second auxiliary heater (230) of the auxiliary melting furnace (200) to lower the melt gap. Alternatively, the controller (400) reduces the amount of solid silicon (S) transferred from the silicon injector (340) of the silicon feeder (300) or lowers the intensity or cycle of the transfer member (330). Alternatively, the controller (400) performs a compensation circuit operation of the ingot growth furnace (100) to control the pulling device (190) to increase the rotational speed or pulling speed of the pulling wire (140), thereby maintaining the diameter of the ingot (IG) at an appropriate level.

Then, the controller (400) transmits a melt gap measurement signal again to the melt gap measuring device (180) and determines again whether the measured melt gap satisfies the normal melt gap range.

In addition, the output control operation of the maintenance heater (153) is performed by the controller (400). The output control operation may include the following steps.

First, the normal output range of the maintenance heater (153) is set by the controller (400). The normal output range can be appropriately selected according to the specifications of the ingot (IG), and can be a preset value or a value input by the user. In addition, the normal output range includes both the normal rest output range and the normal temperature increase output range.

The following controller (400) operates the maintenance heater (153) and the transfer member (330). More specifically, the controller (400) operates the transfer member (330) while simultaneously raising the temperature of the maintenance heater (153) at time T1, so that the solid silicon (S) moves from the solid silicon transfer path (320) to the auxiliary melting furnace (200). At this time, the output of the maintenance heater (153) may have a rest output P1 having a value greater than 0.

The following controller (400) determines whether the actual output of the maintenance heater (153) satisfies the normal output range. Here, the actual output of the maintenance heater (153) may be a value measured by the maintenance heater (153) or a value measured by a separate sensor provided in the first conveying path (150). First, the controller (400) determines whether the temperature increase output of the maintenance heater (153) satisfies the normal temperature increase output range. If the temperature increase output of the maintenance heater (153) does not satisfy the normal temperature increase output range, the controller (400) notifies the user of this or performs feedback control on the maintenance heater (153) so that the temperature increase output satisfies the normal temperature increase output range.

In addition, even if the temperature increase output of the maintenance heater (153) does not reach the normal temperature increase output range within ΔT1 based on a pre-determined time from T1, the controller (400) notifies the user of this or performs feedback control on the maintenance heater (153) so that the temperature increase output satisfies the normal temperature increase output range.

When a set amount of molten silicon (MS) is transferred from the auxiliary melting furnace (200) to the ingot growth furnace (100), the controller (400) controls the maintenance heater (153) back to idle output P0 and stops the transfer member (330).

The following controller (400) determines whether the idle output of the maintenance heater (153) satisfies the normal idle output range. If the idle output of the maintenance heater (153) does not satisfy the normal idle output range, the controller (400) notifies the user of this or performs feedback control on the maintenance heater (153) so that the idle output satisfies the normal idle output range.

In addition, even if the idle output of the maintenance heater (153) does not reach the normal idle output range within ΔT2 based on a pre-determined time from T2, the controller (400) notifies the user of this or performs feedback control on the maintenance heater (153) so that the idle output satisfies the normal idle output range.

In one embodiment, the melt gap control operation and the output control operation of the controller (400) may be performed one at a time and the other at a time.

Although the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely examples. Those skilled in the art will readily understand that various modifications and equivalent other embodiments are possible from the embodiments. Therefore, the true technical protection scope of the present invention should be determined based on the appended claims.

Embodiments according to the present disclosure can be used in industries relating to ingot growth devices and ingot growth control methods.

Claims (10)

Ingot growing furnace containing a main crucible; An auxiliary melting furnace for supplying molten silicon to the above ingot growth furnace; A silicon feeder including a solid silicon transfer path connected to the auxiliary melting furnace and a transfer member connected to the solid silicon transfer path and transferring the solid silicon; A controller for controlling at least one of the ingot growth furnace, the auxiliary melting furnace and the silicon feeder; The above ingot growth furnace further includes a melt gap measuring device for measuring a melt gap, which is the height between the interface of molten silicon contained in the main crucible and a reflector above the main crucible. The above controller If the above melt gap is below the predetermined normal melt gap range, the solid silicon supply amount of the silicon feeder is increased, or the output of the auxiliary melter is increased. An ingot growth device that reduces the solid silicon supply amount of the silicon feeder or lowers the output of the auxiliary melting furnace when the melt gap exceeds the normal melt gap range. In the first paragraph, An ingot growth device, wherein the controller controls at least one of control factors including power, vibration cycle and vibration intensity of the transfer member, which is a vibrator, to regulate the amount of solid silicon supplied. In the first paragraph, The above ingot growth furnace An impression wire having a seed connected to the end; and Further comprising an impression device for impressioning or rotating the above impression wire; An ingot growing device, wherein the controller controls at least one of the rotation speed and the pulling speed of the pulling wire by the pulling device when the melt gap is out of the normal melt gap range. In the first paragraph, The above ingot growth furnace includes a transfer furnace that receives molten silicon from the auxiliary melting furnace and transfers it to the main crucible, and includes a maintenance heater. An ingot growth device, wherein the controller operates the transfer member and simultaneously increases the output of the maintenance heater to a temperature-raising output. In paragraph 4, An ingot growth device, wherein the controller outputs an alarm signal when the temperature increase output of the maintenance heater does not satisfy the normal temperature increase output range or when the temperature increase output of the maintenance heater does not reach the normal temperature increase output range within a predetermined time from the time the transfer member is operated. In paragraph 4, An ingot growth device, wherein the controller operates the maintenance heater while the transfer member is not operating, but maintains the output of the maintenance heater at a rest output greater than 0 and lower than the normal temperature-rising output range. A step of supplying molten silicon to an ingot growth furnace; and A step of growing single crystal silicon while heating the molten silicon; The step of supplying molten silicon to the above ingot growth furnace is: A step of supplying solid silicon from a silicon feeder to an auxiliary melting furnace; A step of melting the solid silicon in the auxiliary melting furnace; and Comprising a step of supplying the molten solid silicon to the ingot growth furnace, The step of growing the above single crystal silicon includes the step of measuring the melt gap of the molten silicon accommodated in the main crucible of the ingot growth furnace, The step of measuring the melt gap is such that, if the measured melt gap is below the normal melt gap range, the amount of solid silicon supplied from the silicon feeder is increased, or the output of the auxiliary melter is increased. An ingot growth control method, wherein the amount of solid silicon supplied from the silicon feeder is reduced or the output of the auxiliary melting furnace is lowered when the measured melt gap exceeds the normal melt gap range. In Article 7, The above ingot growth furnace An impression wire having a seed connected to the end; and Further comprising an impression device for impressioning or rotating the above impression wire; An ingot growth control method, wherein, in the step of measuring the melt gap, if the melt gap is out of the normal melt gap range, the pulling device controls at least one of the rotation speed and the pulling speed of the pulling wire. In Article 7, The above ingot growth furnace includes a transfer furnace including a primary heater, which supplies molten silicon from the auxiliary melting furnace and transfers it to the main crucible. The above silicon feeder includes a transport member for transporting the solid silicon, An ingot growth control method, wherein, in the step of supplying the molten solid silicon to the ingot growth furnace, if the temperature increase output of the maintenance heater does not satisfy the normal temperature increase output range, or if the temperature increase output of the maintenance heater does not reach the normal temperature increase output range within a predetermined time from the time the transfer member is operated, the controller performs feedback control so that the temperature increase output of the maintenance heater satisfies the normal temperature increase output range. In Article 9, An ingot growth control method, wherein the controller operates the maintenance heater while the transfer member is not operating, but maintains the output of the maintenance heater at a rest output greater than 0 and lower than the normal temperature-rising output range.

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