WO2024225036A1 - Semiconductor device and vehicle - Google Patents

Abstract

This semiconductor device comprises: a first die pad; a second die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and a sealing resin covering a part of the first die pad and a part of the second die pad, as well as covering the first semiconductor element and the second semiconductor element. The semiconductor device further comprises: a first heat dissipation member conductively joined to the first die pad; a second heat dissipation member conductively joined to the second die pad; and an insulation part exposing a part of the first heat dissipation member and a part of the second heat dissipation member and insulating the first heat dissipation member and the second heat dissipation member.

Description

Semiconductor device and vehicle

The present invention relates to a semiconductor device and a vehicle.

Patent Document 1 discloses a semiconductor device that includes a first substrate, a semiconductor element mounted on the first substrate, and a sealing resin. When the semiconductor device is used, the first substrate may be attached to a cooler.

JP 2023-7028 A

If an insulator or other material is placed between the first base material and the cooler, heat dissipation may be reduced.

An object of the present disclosure is to provide a semiconductor device that is an improvement over conventional devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device and a vehicle that are capable of promoting heat dissipation.

The semiconductor device provided by the first aspect of the present disclosure comprises a first die pad, a second die pad, a first semiconductor element mounted on the first die pad, a second semiconductor element mounted on the second die pad, and a sealing resin covering a portion of the first die pad, a portion of the second die pad, the first semiconductor element, and the second semiconductor element, and further comprises a first heat dissipation member conductively joined to the first die pad, a second heat dissipation member conductively joined to the second die pad, and an insulating portion that exposes a portion of the first heat dissipation member and a portion of the second heat dissipation member and insulates the first heat dissipation member and the second heat dissipation member.

The vehicle provided by the second aspect of the present disclosure includes a drive source and a semiconductor device provided by the first aspect of the present invention. The semiconductor device is electrically connected to the drive source.

The above configuration makes it possible to provide a semiconductor device and a vehicle that can promote heat dissipation.

Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment. FIG. 3 is a plan view of FIG. 2 in which the sealing resin is shown by imaginary lines. FIG. 4 is a bottom view showing the semiconductor device according to the first embodiment. FIG. 5 is a front view showing the semiconductor device according to the first embodiment. FIG. 6 is a right side view showing the semiconductor device according to the first embodiment. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. FIG. 9 is a partially enlarged view of a part of FIG. FIG. 10 is a partially enlarged view of a part of FIG. FIG. 11 is a diagram illustrating an example of a circuit configuration of the semiconductor device according to the first embodiment. FIG. 12 is a configuration diagram showing a vehicle on which the semiconductor device according to the first embodiment is mounted. FIG. 13 is a bottom view showing a semiconductor device according to a first modification of the first embodiment. FIG. 14 is a cross-sectional view showing a semiconductor device according to a second modification of the first embodiment. FIG. 15 is a plan view showing a semiconductor device according to a third modification of the first embodiment, in which a sealing resin is indicated by imaginary lines. FIG. 16 is a diagram showing an example of a circuit configuration of a semiconductor device according to a third modification of the first embodiment. In FIG. FIG. 17 is a plan view showing a semiconductor device according to a fourth modification of the first embodiment, in which a sealing resin is indicated by imaginary lines. FIG. 18 is a diagram showing an example of a circuit configuration of a semiconductor device according to a fourth modification of the first embodiment. FIG. 19 is a plan view showing a semiconductor device according to a fifth modification of the first embodiment, in which a sealing resin is indicated by imaginary lines. FIG. 20 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a fifth modification of the first embodiment. FIG. 21 is a plan view showing a semiconductor device according to the second embodiment. FIG. 22 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to the second embodiment. FIG. 23 is a plan view showing a semiconductor device according to a first modification of the second embodiment, in which a sealing resin is indicated by imaginary lines. FIG. 24 is a diagram showing an example of a circuit configuration of a semiconductor device according to a first modified example of the second embodiment. FIG. 25 is a plan view showing a semiconductor device according to a seventh modification of the first embodiment, in which a sealing resin is indicated by imaginary lines. FIG. 26 is a diagram showing an example of a circuit configuration of a semiconductor device according to a seventh modification of the first embodiment.

Below, a preferred embodiment of the present invention will be described in detail with reference to the drawings.

Terms such as "first," "second," and "third" in this disclosure are used merely for identification purposes and are not intended to assign any rank to their objects.

In this disclosure, "an object A is formed on an object B" and "an object A is formed on an object B" include "an object A is formed directly on an object B" and "an object A is formed on an object B with another object interposed between the object A and the object B" unless otherwise specified. Similarly, "an object A is disposed on an object B" and "an object A is disposed on an object B" include "an object A is disposed directly on an object B" and "an object A is disposed on an object B with another object interposed between the object A and the object B" unless otherwise specified. Similarly, "an object A is located on an object B" includes "an object A is located on an object B in contact with an object B" and "an object A is located on an object B with another object interposed between the object A and the object B" unless otherwise specified. Additionally, unless otherwise specified, "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Additionally, in this disclosure, "a surface A faces in direction B (on one side or the other side)" is not limited to the case where the angle of surface A with respect to direction B is 90 degrees, but also includes the case where surface A is tilted with respect to direction B.

First embodiment:
1 to 11 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A10 of this embodiment includes a first die pad 10A, a second die pad 10B, a plurality of terminal leads 13, a first semiconductor element 21, a second semiconductor element 22, a first conductive member 31, a second conductive member 32, a pair of first connection members 41A and 41B, a pair of second connection members 42A and 42B, a sealing resin 50, a first heat dissipation member 60A, a second heat dissipation member 60B, and an insulating section 70. The plurality of terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 172, a sixth terminal lead 181, and a seventh terminal lead 182.

For ease of explanation, the thickness direction of the semiconductor device A10 is referred to as the "thickness direction z." In the following explanation, one side of the thickness direction z may be referred to as the upper side, and the other side as the lower side. Note that the terms "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component in the thickness direction z, and do not necessarily define the relationship with the direction of gravity. Furthermore, "planar view" refers to the view in the thickness direction z. A direction that intersects with the thickness direction z is referred to as the "first direction x." A direction that intersects with the thickness direction z and the first direction x is referred to as the "second direction y." In this embodiment, the first direction x, the second direction y, and the thickness direction z are mutually perpendicular.

The specific structure and use of the semiconductor device according to the present disclosure are not limited in any way. The semiconductor device A10 converts, for example, a DC power supply voltage applied to a first terminal lead 14 and a second terminal lead 15 of the multiple terminal leads 13 into an AC voltage by a first semiconductor element 21 and a second semiconductor element 22. The converted AC voltage is input to a power supply target such as a motor from a third terminal lead 16 of the multiple terminal leads 13. The semiconductor device A10 is used in a power conversion circuit such as an inverter.

The first die pad 10A and the second die pad 10B are positioned apart from each other in the first direction x, as shown in Figures 3 and 7. The first die pad 10A, the second die pad 10B, and the multiple terminal leads 13 are formed from the same lead frame. The lead frame is composed of copper (Cu) or a copper alloy. Therefore, the first die pad 10A, the second die pad 10B, and the multiple terminal leads 13 contain copper. Each of the first die pad 10A and the second die pad 10B is, for example, rectangular in a plan view.

The first die pad 10A and the second die pad 10B each have a main surface 101 and a back surface 102. Unless otherwise specified, the main surface 101 and the back surface 102 described below are common to the first die pad 10A and the second die pad 10B. The main surface 101 faces the thickness direction z (upward). The main surface 101 is covered with sealing resin 50. The first semiconductor element 21 is mounted on the main surface 101 of the first die pad 10A. The back surface 102 of the first die pad 10A faces the opposite side to the side where the first semiconductor element 21 is located in the thickness direction z. The second semiconductor element 22 is mounted on the main surface 101 of the second die pad 10B. The back surface 102 of the second die pad 10B faces the opposite side to the side where the second semiconductor element 22 is located in the thickness direction z. The back surface 102 is exposed from the sealing resin 50. The back surface 102 is plated with, for example, tin (Sn).

As shown in Figures 1 to 8, the sealing resin 50 covers the first semiconductor element 21, the second semiconductor element 22, the first conductive member 31, the second conductive member 32, and at least a portion of each of the first die pad 10A and the second die pad 10B. Furthermore, the sealing resin 50 covers a portion of each of the multiple terminal leads 13. The sealing resin 50 has electrical insulation properties. The sealing resin 50 contains, for example, a black epoxy resin. The sealing resin 50 has a resin main surface 51, a resin back surface 52, a pair of first side surfaces 53, a second side surface 54, a third side surface 55, multiple recesses 56, a groove portion 57, and multiple recesses 581, 582.

As shown in FIG. 7, the resin main surface 51 faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z. As shown in FIG. 7 and FIG. 8, the resin back surface 52 faces the opposite side to the resin main surface 51 in the thickness direction z. As shown in FIG. 4, the back surfaces 102 of the first die pad 10A and the second die pad 10B are exposed from the resin back surface 52.

As shown in Figures 2, 4, and 5, the pair of first side surfaces 53 are positioned apart from each other in the first direction x. The pair of first side surfaces 53 face the first direction x and extend in the second direction y. The pair of first side surfaces 53 are connected to the resin main surface 51 and the resin back surface 52.

As shown in Figures 2, 4 and 6, the second side 54 and the third side 55 are located apart from each other in the second direction y. The second side 54 and the third side 55 face opposite each other in the second direction y and extend in the first direction x. The second side 54 and the third side 55 are connected to the resin main surface 51 and the resin back surface 52. As shown in Figure 5, a plurality of terminal leads 13 are exposed from the third side 55.

As shown in Figures 2, 4 and 5, the multiple recesses 56 recess from the third side surface 55 in the second direction y, and extend from the resin main surface 51 to the resin back surface 52 in the thickness direction z. In the first direction x, the multiple recesses 56 are individually located between the seventh terminal lead 182 and the third terminal lead 16, between the third terminal lead 16 and the first terminal lead 14, between the first terminal lead 14 and the second terminal lead 15, and between the second terminal lead 15 and the sixth terminal lead 181.

As shown in Figures 4, 5, 7 and 8, the groove portion 57 is recessed from the resin back surface 52 in the thickness direction z and extends along the second direction y. Both sides of the groove portion 57 in the second direction y are connected to the second side surface 54 and the third side surface 55. When viewed along the thickness direction z, the groove portion 57 separates the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B. Note that the sealing resin 50 may be configured without the groove portion 57.

5, 6, 7 and 8, each of the multiple recesses 581, 582 is recessed from the resin main surface 51 in the thickness direction z. The planar shape of each of the multiple recesses 581, 582 is not particularly limited, but is circular in the illustrated example. Each of the multiple recesses 581 overlaps the first die pad 10A in a planar view. In the illustrated example, the multiple recesses 581 are individually located near the four corners of the first die pad 10A in a planar view. Each of the multiple recesses 582 overlaps the second die pad 10B in a planar view. In the illustrated example, the multiple recesses 582 are individually located near the four corners of the second die pad 10B in a planar view. Each of the multiple recesses 581, 582 does not overlap either the first conductive member 31 or the second conductive member 32 in a planar view. Furthermore, each of the multiple recesses 581, 582 does not overlap with either the pair of first connection members 41A, 41B or the pair of second connection members 42A, 42B in a plan view. The multiple recesses 581 are formed by pins for fixing the first die pad 10A during the manufacture of the semiconductor device A10. The pins are pressed against the first die pad 10A at a stage before the sealing resin 50 is formed to fix the first die pad 10A. In this state, the formation of the sealing resin 50 is started. Then, the pins are pulled out before the formation of the sealing resin 50 is completed. As a result, the sealing resin 50 is formed in at least a part of the region where the pins were arranged, so that the main surface 101 of the first die pad 10A is covered with the sealing resin 50. The multiple recesses 581 are marks formed by the molding process of the sealing resin 50. The multiple recesses 582 are also formed by pins for fixing the second die pad 10B during the manufacture of the semiconductor device A10. The multiple recesses 582 are marks formed during the molding process of the sealing resin 50. Note that 50 may not have multiple recesses 581, 582.

1, 2 and 4, the sealing resin 50 further has a number of traces 589. The number of traces 589 are traces formed by, for example, an ejector pin pressed against the sealing resin 50 to remove the sealing resin 50 from a mold when the sealing resin 50 is formed. Each of the number of traces 589 is recessed from either the resin main surface 51 or the resin back surface 52. Note that none of the number of traces 589 may be formed on the sealing resin 50. Also, as shown in FIG. 4, the back surface 102 of the first die pad 10A and the back surface 102 of the second die pad 10B each have a trace 109. The trace 109 formed on the first die pad 10A and the trace 109 formed on the second die pad 10B are traces formed by the aforementioned ejector pin being pressed against the sealing resin 50. The traces 109 formed on the first die pad 10A are recessed from the rear surface 102 of the first die pad 10A, and the traces 109 formed on the second die pad 10B are recessed from the rear surface 102 of the second die pad 10B. Note that the traces 109 do not have to be formed on either the first die pad 10A or the second die pad 10B. The depths of the multiple traces 589 and the multiple traces 109 are, for example, smaller than the depths of the multiple recesses 581, but may be larger or the same. Note that the sealing resin 50 may be configured not to have the multiple traces 589.

3 and 4, the first die pad 10A and the second die pad 10B have a first end face 111, a second end face 112, a third end face 113, and a fourth end face 114. The first end face 111, the second end face 112, the third end face 113, and the fourth end face 114 are covered with the sealing resin 50. The first end face 111 faces in the first direction x and extends in the second direction y. The first end face 111 is located closest to a pair of first side faces 53 of the sealing resin 50. The second end face 112 faces in the second direction y and extends in the first direction x. The second end face 112 is located closest to the second side face 54 of the sealing resin 50. The third end face 113 faces the opposite side to the second end face 112 in the second direction y, and extends in the first direction x. The third end surface 113 is located closest to the third side surface 55 of the sealing resin 50. The fourth end surface 114 faces the opposite side to the first end surface 111 in the first direction x and extends in the second direction y. As shown in FIG. 7, a groove portion 57 is located between the fourth end surface 114 of the first die pad 10A and the fourth end surface 114 of the second die pad 10B.

As shown in Figures 3 and 4, the first die pad 10A and the second die pad 10B have a second corner end surface 122. The second corner end surface 122 is located between the first end surface 111 and the third end surface 113, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The second corner end surface 122 is covered with the sealing resin 50, and is a flat surface inclined with respect to the first end surface 111 and the third end surface 113.

As shown in Figures 3 and 4, the first die pad 10A and the second die pad 10B have a third corner end surface 123. The third corner end surface 123 is located between the second end surface 112 and the fourth end surface 114, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The third corner end surface 123 is covered with the sealing resin 50, and is a flat surface that is inclined with respect to the second end surface 112 and the fourth end surface 114.

As shown in Figures 3 and 4, the first die pad 10A and the second die pad 10B have a fourth corner end surface 124. The fourth corner end surface 124 is located between the third end surface 113 and the fourth end surface 114, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The fourth corner end surface 124 is covered with the sealing resin 50, and is a flat surface that is inclined with respect to the third end surface 113 and the fourth end surface 114.

Each of the first semiconductor element 21 and the second semiconductor element 22 is, for example, a switching element such as a transistor. As shown in FIG. 11, the transistor in the semiconductor device A10 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), but may also be a bipolar transistor or an IGBT (Insulated Gate Bipolar Transistor). Note that the circuit in FIG. 11 also illustrates a parasitic diode component built into each of the first semiconductor element 21 and the second semiconductor element 22. Each of the first semiconductor element 21 and the second semiconductor element 22 is, for example, an n-channel type, but may be a p-channel type. Each of the first semiconductor element 21 and the second semiconductor element 22 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon (Si) or silicon carbide (SiC).

The first semiconductor element 21 is mounted on the first die pad 10A as shown in Figures 3 and 7. Preferably, in a plan view, the center of gravity of the first semiconductor element 21 overlaps with the center of the first die pad 10A.

The first semiconductor element 21 has a first main surface 21a and a first back surface 21b. The first main surface 21a and the first back surface 21b are spaced apart from each other in the thickness direction z. The first main surface 21a faces in the same direction as the main surface 101 of the first die pad 10A. The first back surface 21b faces the opposite side to the first main surface 21a in the thickness direction z and faces the main surface 101 of the first die pad 10A.

The first semiconductor element 21 is mounted on the first die pad 10A as shown in Figures 3 and 7. As shown in Figure 9, the first semiconductor element 21 has a first main surface electrode 211, a main surface electrode 212, and a back surface electrode 213.

The first principal surface electrode 211 is disposed on the first principal surface 21a. A current corresponding to the power converted by the first semiconductor element 21 flows through the first principal surface electrode 211. In an example in which the first semiconductor element 21 is a MOSFET, the first principal surface electrode 211 is, for example, a source electrode. The first principal surface electrode 211 includes a plurality of metal plating layers. The first principal surface electrode 211 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. In addition, the first principal surface electrode 211 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

The principal surface electrode 212 is disposed on the first principal surface 21a. A first drive signal (gate voltage) for driving the first semiconductor element 21 is applied to the principal surface electrode 212. In an example in which the first semiconductor element 21 is a MOS EFT, the principal surface electrode 212 is, for example, a gate electrode. In a plan view, the area of the principal surface electrode 212 is smaller than the area of the first principal surface electrode 211.

The back electrode 213 is disposed on the first back surface 21b. The back electrode 213 is provided facing the main surface 101 of the first die pad 10A. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the back electrode 213. In an example in which the first semiconductor element 21 is a MOSFET, the back electrode 213 is, for example, a drain electrode.

The second semiconductor element 22 is mounted on the main surface 101 of the second die pad 10B. Preferably, in a plan view, the center of gravity of the second semiconductor element 22 overlaps with the center of the second die pad 10B.

The second semiconductor element 22 has a second main surface 22a and a second back surface 22b. The second main surface 22a and the second back surface 22b are spaced apart from each other in the thickness direction z. The second main surface 22a faces in the same direction as the main surface 101 of the second die pad 10B. The second back surface 22b faces the opposite side to the second main surface 22a in the thickness direction z and faces the main surface 101 of the second die pad 10B.

The second semiconductor element 22 is mounted on the second die pad 10B as shown in Figures 3 and 7. As shown in Figure 10, the second semiconductor element 22 has a second principal surface electrode 221, a principal surface electrode 222, and a back surface electrode 223.

The second principal surface electrode 221 is disposed on the second principal surface 22a. A current corresponding to the power converted by the second semiconductor element 22 flows through the second principal surface electrode 221. In an example in which the second semiconductor element 22 is a MOSFET, the second principal surface electrode 221 is, for example, a source electrode. The second principal surface electrode 221 includes multiple metal plating layers, similar to the first principal surface electrode 211. The second principal surface electrode 221 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the second principal surface electrode 221 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

The principal surface electrode 222 is disposed on the second principal surface 22a. A second drive signal (gate voltage) for driving the second semiconductor element 22 is applied to the principal surface electrode 222. In an example in which the second semiconductor element 22 is a MOS EFT, the principal surface electrode 222 is, for example, a gate electrode. In a plan view, the area of the principal surface electrode 222 is smaller than the area of the second principal surface electrode 221.

The back electrode 223 is disposed on the second back surface 22b. The back electrode 223 is provided facing the main surface 101 of the second die pad 10B. A current corresponding to the power before being converted by the second semiconductor element 22 flows through the back electrode 223. In an example in which the second semiconductor element 22 is a MOSFET, the back electrode 223 is, for example, a drain electrode.

The semiconductor device A10 further includes two die bonding layers 231, 232. Each of the two die bonding layers 231, 232 is conductive. Each of the die bonding layers 231, 232 is, for example, solder. Alternatively, each of the die bonding layers 231, 232 may be a sintered metal.

As shown in Figures 7 and 9, the die bonding layer 231 is interposed between the main surface 101 of the first die pad 10A and the back electrode 213 of the first semiconductor element 21. The die bonding layer 231 bonds the main surface 101 of the first die pad 10A and the back electrode 213 of the first semiconductor element 21. This allows the back electrode 213 of the first semiconductor element 21 to be conductive to the first die pad 10A.

As shown in Figures 7, 8 and 10, the die bonding layer 232 is interposed between the main surface 101 of the second die pad 10B and the back electrode 223 of the second semiconductor element 22. The die bonding layer 232 bonds the main surface 101 of the second die pad 10B and the back electrode 223 of the second semiconductor element 22. This allows the back electrode 223 of the second semiconductor element 22 to be conductive to the second die pad 10B.

As shown in FIG. 3, the multiple terminal leads 13 are located on the side opposite to the side where the second end face 112 faces the first die pad 10A and the second die pad 10B in the second direction y. At least one of the multiple terminal leads 13 is electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. The multiple terminal leads 13 are arranged along the first direction x. The multiple terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 172, a sixth terminal lead 181, and a seventh terminal lead 182.

As shown in FIG. 3, the first terminal lead 14 is located away from the first die pad 10A and the second die pad 10B in the second direction y, and is located between the second terminal lead 15 and the third terminal lead 16 in the first direction x. The first terminal lead 14 extends along the second direction y. The first terminal lead 14 is electrically connected to the second main surface electrode 221 of the second semiconductor element 22. The first terminal lead 14 includes a covering portion 14A and an exposed portion 14B. As shown in FIG. 8, the covering portion 14A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 14B is connected to the covering portion 14A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 14B extends away from the first die pad 10A and the second die pad 10B in the second direction y. The surface of the exposed portion 14B is, for example, tin-plated.

As shown in FIG. 3, the second terminal lead 15 includes a portion extending along the second direction y and is connected to the first die pad 10A. Therefore, the second terminal lead 15 is electrically connected to the back electrode 213 of the first semiconductor element 21 via the first die pad 10A. The second terminal lead 15 is a P terminal (positive electrode) to which a DC power supply voltage to be converted is applied. The second terminal lead 15 includes a covering portion 15A and an exposed portion 15B. The covering portion 15A is connected to the third end surface 113 of the first die pad 10A and is covered with the sealing resin 50. When viewed along the first direction x, the covering portion 15A is bent. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 15B is connected to the covering portion 15A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 15B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 15B is plated with, for example, tin.

As shown in FIG. 3, the third terminal lead 16 includes a portion extending along the second direction y and is connected to the second die pad 10B. Therefore, the third terminal lead 16 is electrically connected to the back electrode 223 of the second semiconductor element 22 via the second die pad 10B. The AC power converted by the first semiconductor element 21 and the second semiconductor element 22 is output from the third terminal lead 16. The third terminal lead 16 includes a covering portion 16A and an exposed portion 16B. The covering portion 16A is connected to the third end surface 113 of the second die pad 10B and is covered with the sealing resin 50. When viewed along the first direction x, the covering portion 16A is bent in the same manner as the covering portion 15A of the second terminal lead 15. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 16B is connected to the covering portion 16A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 16B extends away from the second die pad 10B in the second direction y. The surface of the exposed portion 16B is plated with, for example, tin.

As shown in FIG. 3, the fourth terminal lead 171 is located away from the first die pad 10A in the second direction y and is located on one side in the first direction x. As shown in FIG. 3, the fifth terminal lead 172 is located away from the second die pad 10B in the second direction y and is located on the other side in the first direction x. The fourth terminal lead 171 is electrically connected to the main surface electrode 212 (gate electrode) of the first semiconductor element 21. A drive signal (gate voltage) for driving the first semiconductor element 21 is applied to the fourth terminal lead 171. The fifth terminal lead 172 is electrically connected to the main surface electrode 222 (gate electrode) of the second semiconductor element 22. A drive signal (gate voltage) for driving the second semiconductor element 22 is applied to the fifth terminal lead 172.

As shown in FIG. 3, the fourth terminal lead 171 includes a covering portion 171A and an exposed portion 171B. The covering portion 171A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 171B is connected to the covering portion 171A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 171B extends in the second direction y away from the first die pad 10A. The surface of the exposed portion 171B is, for example, tin-plated.

As shown in FIG. 3, the fifth terminal lead 172 includes a covering portion 172A and an exposed portion 172B. The covering portion 172A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 172B is connected to the covering portion 172A and is exposed from the sealing resin 50. The exposed portion 172B extends in the second direction y away from the second die pad 10B. The surface of the exposed portion 172B is, for example, tin-plated.

As shown in FIG. 3, the sixth terminal lead 181 is located away from the first die pad 10A in the second direction y, and is located between the second terminal lead 15 and the fourth terminal lead 171 in the first direction x. As shown in FIG. 3, the seventh terminal lead 182 is located away from the second die pad 10B in the second direction y, and is located between the third terminal lead 16 and the fifth terminal lead 172 in the first direction x. The sixth terminal lead 181 is electrically connected to the first main surface electrode 211 (source electrode) of the first semiconductor element 21. A voltage corresponding to the current flowing through the first main surface electrode 211 of the first semiconductor element 21 is applied to the sixth terminal lead 181. The seventh terminal lead 182 is electrically connected to the second main surface electrode 221 (source electrode) of the second semiconductor element 22. A voltage corresponding to the current flowing through the second main surface electrode 221 (source electrode) of the second semiconductor element 22 is applied to the seventh terminal lead 182.

As shown in FIG. 3, the sixth terminal lead 181 includes a covering portion 181A and an exposed portion 181B. The covering portion 181A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 181B is connected to the covering portion 181A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 181B extends in the second direction y toward the side away from the first die pad 10A. The surface of the exposed portion 181B is, for example, tin-plated.

As shown in FIG. 3, the seventh terminal lead 182 includes a covered portion 182A and an exposed portion 182B. The covered portion 182A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 182B is connected to the covered portion 182A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 182B extends in the second direction y toward the side away from the second die pad 10B. The surface of the exposed portion 182B is, for example, tin-plated.

As shown in FIG. 5, in the semiconductor device A10, the heights of the exposed portion 14B of the first terminal lead 14, the exposed portion 15B of the second terminal lead 15, and the exposed portion 16B of the third terminal lead 16 are all the same. Furthermore, the thicknesses of these are all the same. Therefore, when viewed along the first direction x, at least a portion of the first terminal lead 14 (exposed portion 14B) overlaps with each of the second terminal lead 15 and the third terminal lead 16 (see FIG. 6).

As shown in FIG. 3, the first conductive member 31 is bonded to the first main surface electrode 211 of the first semiconductor element 21 and the second die pad 10B. As a result, the first main surface electrode 211 is electrically connected to the second die pad 10B and the back surface electrode 223 of the second semiconductor element 22. The composition of the first conductive member 31 includes copper. In the semiconductor device A10, the first conductive member 31 is a metal clip. The first conductive member 31 has a first body portion 311, a first joint portion 312, and a second joint portion 313.

As shown in FIG. 3, the first body portion 311 forms a main portion of the first conductive member 31. The first body portion 311 extends in the first direction x. In the illustrated example, the first body portion 311 extends linearly between the first semiconductor element 21 and the second semiconductor element 22 in a plan view. The first body portion 311 straddles the first die pad 10A and the second die pad 10B. In the illustrated example, the end of the first body portion 311 that is connected to the first joint portion 312 is bifurcated.

As shown in Figures 3, 4 and 9, the first joint 312 is joined to the first main surface electrode 211 of the first semiconductor element 21. The first joint 312 includes two first band portions 312a. As shown in Figures 3 and 4, the two first band portions 312a are located apart from each other in the second direction y. Each of the two first band portions 312a has the first direction x as its longitudinal direction. The two first band portions 312a are arranged parallel to each other in a planar view. In the illustrated example, the end portion connected to the first joint 312 of the first main body portion 311 described above is bifurcated and each is connected to a corresponding one of the two first band portions 312a. Unlike this example, the end of the first body portion 311 connected to the first joint portion 312 is not bifurcated, and the first joint portion 312 may be a single rectangular portion (a configuration in which two first strip portions 312a are connected). The area of the first joint portion 312 in a plan view (the total area of each of the two first strip portions 312a) is, for example, 10% to 100% of the area of the first principal surface electrode 211 in a plan view.

As shown in FIG. 3, the second bonding portion 313 is bonded to the second die pad 10B. The second bonding portion 313 extends in the second direction y. The second bonding portion 313 is connected to the first body portion 311. The second bonding portion 313 is located on the opposite side to the first bonding portion 312, with the first body portion 311 in between.

As shown in Figures 7 and 9, the semiconductor device A10 further includes a first bonding layer 33. The first bonding layer 33 is interposed between the first main surface electrode 211 of the first semiconductor element 21 and the two first strip portions 312a of the first bonding portion 312. The first bonding layer 33 bonds the first main surface electrode 211 and the first bonding portion 312 (the two first strip portions 312a). The first bonding layer 33 is conductive. The first bonding layer 33 is, for example, solder. Alternatively, the first bonding layer 33 may be a sintered metal.

As shown in FIG. 7, the semiconductor device A10 further includes a second bonding layer 34. The second bonding layer 34 is interposed between the second die pad 10B and the second bonding portion 313. The second bonding layer 34 bonds the second die pad 10B and the second bonding portion 313. The second bonding layer 34 is conductive. The second bonding layer 34 is, for example, solder. Alternatively, the second bonding layer 34 may be a sintered metal.

As shown in FIG. 3, the second conductive member 32 is conductively joined to the second principal surface electrode 221 of the second semiconductor element 22 and the covering portion 14A of the first terminal lead 14. This allows the second principal surface electrode 221 to be conductive to the first terminal lead 14. The composition of the second conductive member 32 includes copper. In the semiconductor device A10, the second conductive member 32 is a metal clip. The second conductive member 32 has a second body portion 321, a third joint portion 322, and a fourth joint portion 323.

As shown in FIG. 3, the second body portion 321 forms a main portion of the second conductive member 32. When viewed along the thickness direction z, the second body portion 321 is bent in a hook shape. When viewed along the thickness direction z, the first body portion 311 overlaps the main surface 101 of the second die pad 10B.

As shown in FIG. 3, the third joint 322 is joined to the covering portion 14A of the first terminal lead 14. The third joint 322 extends in the first direction x. The third joint 322 is connected to the second body portion 321. The third joint 322 is located on the opposite side to the fourth joint 323 with the second body portion 321 in between.

As shown in Figures 3 and 10, the fourth joint 323 is joined to the second main surface electrode 221 of the second semiconductor element 22. The fourth joint 323 includes two second band portions 323a. As shown in Figures 3 and 8, the two second band portions 323a are positioned apart from each other in the second direction y. Each of the two second band portions 323a has the first direction x as its longitudinal direction. The two second band portions 323a are arranged parallel to each other in a planar view. In the illustrated example, the end portion connected to the fourth joint 323 of the second main body portion 321 described above is bifurcated and each is connected to a corresponding one of the two second band portions 323a. Unlike this example, the end of the second body 321 connected to the fourth joint 323 may not be bifurcated, and the fourth joint 323 may be one rectangular portion (a configuration in which two second strip portions 323a are connected). The area of the fourth joint 323 in a plan view (the total area of the two second strip portions 323a) is, for example, 10% to 100% of the area of the second principal surface electrode 221 in a plan view.

As shown in Figures 7 and 10, the semiconductor device A10 further includes a fourth bonding layer 36. The fourth bonding layer 36 is interposed between the second main surface electrode 221 of the second semiconductor element 22 and the two second strip portions 323a of the fourth bonding portion 323. The fourth bonding layer 36 bonds the second main surface electrode 221 of the second semiconductor element 22 to the fourth bonding portion 323 (each of the two second strip portions 323a). The fourth bonding layer 36 is conductive. The fourth bonding layer 36 is, for example, solder. Alternatively, the fourth bonding layer 36 may be a sintered metal.

Each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B is, for example, a bonding wire. The composition of each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B includes gold. In addition, the composition of each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B may include copper and may include aluminum (Al).

The first connection member 41A is joined to the principal surface electrode 212 of the first semiconductor element 21 and the covering portion 171A of the fourth terminal lead 171, as shown in FIG. 3. This allows the fourth terminal lead 171 to be electrically connected to the principal surface electrode 212 of the first semiconductor element 21. The first connection member 41B is joined to the principal surface electrode 222 of the second semiconductor element 22 and the covering portion 172A of the fifth terminal lead 172, as shown in FIG. 3. This allows the fifth terminal lead 172 to be electrically connected to the principal surface electrode 222 of the second semiconductor element 22.

The second connection member 42A is joined to the first main surface electrode 211 of the first semiconductor element 21 and the covering portion 181A of the sixth terminal lead 181 as shown in FIG. 3. This allows the sixth terminal lead 181 to be electrically connected to the first main surface electrode 211 of the first semiconductor element 21. The second connection member 42B is joined to the second main surface electrode 221 of the second semiconductor element 22 and the covering portion 182A of the seventh terminal lead 182 as shown in FIG. 3. This allows the seventh terminal lead 182 to be electrically connected to the second main surface electrode 221 of the second semiconductor element 22.

The first heat dissipation member 60A is a member for promoting heat dissipation from the first semiconductor element 21. The first heat dissipation member 60A includes a metal such as Al (aluminum), Cu (copper), or stainless steel. There are no limitations on the specific configuration of the first heat dissipation member 60A, and in this embodiment, it has a first main body portion 61A and a plurality of first protrusions 62A.

As shown in Figures 4 to 8, the first body portion 61A has a first heat dissipation main surface 611A and a second heat dissipation main surface 611B. The first heat dissipation main surface 611A faces the same side (upward) as the main surface 101 in the thickness direction z. The first heat dissipation back surface 612A faces the opposite side to the first heat dissipation main surface 611A in the thickness direction z. The first heat dissipation main surface 611A faces the back surface 102 of the first die pad 10A. In the illustrated example, the first heat dissipation main surface 611A is larger than the back surface 102 of the first die pad 10A when viewed in the thickness direction z.

The first heat dissipation surface 611A and the back surface 102 of the first die pad 10A are electrically connected by a first bonding layer 69A. The specific configuration of the first bonding layer 69A is not limited in any way. The first bonding layer 69A is, for example, solder, Ag paste, Ag sintered material, or a solid-phase diffusion bonding layer. Depending on the method of electrically connecting the first heat dissipation surface 611A and the back surface 102 of the first die pad 10A, the first bonding layer 69A may be integrated with either or both of the first die pad 10A and the first body portion 61A.

The multiple first protrusions 62A protrude in the thickness direction z from the first heat dissipation back surface 612A of the first main body portion 61A. The specific configuration of the multiple first protrusions 62A is not limited in any way. In the illustrated example, the multiple first protrusions 62A are each a plate-shaped portion along the first direction x. Unlike this example, the first protrusions 62A may be, for example, a columnar portion protruding in the thickness direction z.

The multiple first protrusions 62A are exposed to the cooling fluid space 8. The cooling fluid space 8 is a space in which a cooling fluid for cooling the semiconductor device A10 is present. In the present disclosure, a cooling fluid that is non-conductive and insulating is used. Examples of such cooling fluids include gases such as air, oils, and liquids such as fluorine-based inert liquids. In the case of the multiple first protrusions 62A of this embodiment, it is reasonable for the cooling fluid to flow along the first direction x.

The second heat dissipation member 60B is a member for promoting heat dissipation from the second semiconductor element 22. The second heat dissipation member 60B includes a metal such as Al (aluminum), Cu (copper), or stainless steel. There are no limitations on the specific configuration of the second heat dissipation member 60B, and in this embodiment, it has a second main body portion 61B and a plurality of second protrusions 62B.

As shown in Figures 4 to 7, the second body portion 61B has a second heat dissipation main surface 611B and a second heat dissipation main surface 611B. The second heat dissipation main surface 611B faces the same side (upward) as the main surface 101 in the thickness direction z. The second heat dissipation back surface 612B faces the opposite side to the second heat dissipation main surface 611B in the thickness direction z. The second heat dissipation main surface 611B faces the back surface 102 of the second die pad 10B. In the illustrated example, the second heat dissipation main surface 611B is larger than the back surface 102 of the second die pad 10B when viewed in the thickness direction z.

The second heat dissipation surface 611B and the back surface 102 of the second die pad 10B are electrically connected by a second bonding layer 69B. There are no limitations on the specific configuration of the second bonding layer 69B. The second bonding layer 69B is, for example, solder, Ag paste, Ag sintered material, or a solid-phase diffusion bonding layer. Depending on the method of electrically connecting the second heat dissipation surface 611B and the back surface 102 of the second die pad 10B, the second bonding layer 69B may be integrated with either or both of the second die pad 10B and the second body portion 61B.

The multiple second protrusions 62B protrude in the thickness direction z from the second heat dissipation back surface 612B of the second main body portion 61B, similar to the multiple first protrusions 62A shown in FIG. 8. The specific configuration of the multiple second protrusions 62B is not limited in any way. In the illustrated example, the multiple second protrusions 62B are each a plate-shaped portion extending along the first direction x. Unlike this example, the second protrusions 62B may be, for example, a columnar portion protruding in the thickness direction z.

The multiple second protrusions 62B are exposed to the cooling fluid space 8 described above. In the case of the multiple second protrusions 62B of this embodiment, it is reasonable for the cooling fluid to flow along the first direction x.

The insulating part 70 insulates the first heat dissipation member 60A from the second heat dissipation member 60B. The insulating part 70 is interposed between the first heat dissipation member 60A and the second heat dissipation member 60B. As shown in Figures 3 to 8, the insulating part 70 in this embodiment is separate from the sealing resin 50. The material of the insulating part 70 is not limited in any way and includes, for example, insulating resin. Examples of insulating resins include PPS (Poly Phenylene Sulfide) resin and PBT (Poly Butylene Terephthalate) resin.

The insulating part 70 has an insulating main surface 71 and an insulating back surface 72. The insulating main surface 71 faces the same side as the first heat dissipation main surface 611A and the second heat dissipation main surface 611B in the thickness direction z. The first heat dissipation main surface 611A and the second heat dissipation main surface 611B are exposed from the insulating main surface 71. The insulating back surface 72 faces the opposite side to the insulating main surface 71 in the thickness direction z. A plurality of first protrusions 62A and a plurality of second protrusions 62B protrude from the insulating back surface 72. A portion of the first heat dissipation back surface 612A and a portion of the second heat dissipation back surface 612B may be exposed from the insulating back surface 72. In the illustrated example, the insulating part 70 has a groove portion 77. The groove portion 77 is recessed from the insulating main surface 71 in the thickness direction z and extends in the second direction y. When viewed along the thickness direction z, the groove portion 77 is located between the first main heat dissipation surface 611A and the second main heat dissipation surface 611B. When viewed along the thickness direction z, the groove portion 77 overlaps with the groove portion 57. Note that the insulating portion 70 may be configured without the groove portion 77.

The manufacturing method of the semiconductor device A10 is not limited in any way. For example, a process is performed in which the first die pad 10A, the second die pad 10B, the first semiconductor element 21, the second semiconductor element 22, the multiple terminal leads 13, the first conductive member 31, the second conductive member 32, at least a portion of the first connecting members 41A and 41B, and at least a portion of the second connecting members 42A and 42B are covered with the sealing resin 50. In addition, a process is performed in which a portion of the first heat dissipation member 60A and a portion of the second heat dissipation member 60B are covered with the insulating portion 70. This may be followed by a process in which the back surface 102 of the first die pad 10A is electrically connected to the first main heat dissipation surface 611A, and a process in which the back surface 102 of the second die pad 10B is electrically connected to the second main heat dissipation surface 611B.

The first heat dissipation member 60A, the second heat dissipation member 60B, and the insulating section 70 may be configured to have parts other than those shown in the figure so that the cooling fluid space 8 is configured to allow the cooling fluid to flow appropriately. In addition, a cooler or the like through which the cooling fluid flows may be configured by combining parts (not shown) other than the first heat dissipation member 60A, the second heat dissipation member 60B, and the insulating section 70.

As shown in FIG. 11, in the semiconductor device A10 configured as described above, the first principal surface electrode 211 of the first semiconductor element 21 and the back surface electrode 223 of the second semiconductor element 22 are electrically connected. Therefore, the semiconductor device A10 forms a half-bridge circuit using two transistors (the first semiconductor element 21 and the second semiconductor element 22).

Next, a vehicle B equipped with a semiconductor device A10 according to the present disclosure will be described with reference to FIG. 12. Vehicle B is, for example, an electric vehicle (EV).

As shown in FIG. 49, vehicle B is equipped with an on-board charger 81, a storage battery 82, and a drive system 83. Power is supplied to the on-board charger 81 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 81 via a wired connection. The on-board charger 81 is configured with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 81 is stepped up by the converter and then supplied to the storage battery 82. The stepped-up voltage is, for example, 600V.

The drive system 83 drives the vehicle B. The drive system 83 has an inverter 831 and a drive source 832. The semiconductor device A10 constitutes part of the inverter 831. The power stored in the storage battery 82 is supplied to the inverter 831. The power supplied from the storage battery 82 to the inverter 831 is DC power. In addition, unlike the power system shown in FIG. 24, a step-up DC-DC converter may be further provided between the storage battery 82 and the inverter 831. The inverter 831 converts DC power into AC power. The inverter 831 including the semiconductor device A10 is conducted to the drive source 832. The drive source 832 has an AC motor and a transmission. When the AC power converted by the inverter 831 is supplied to the drive source 832, the AC motor rotates and the rotation is transmitted to the transmission. The transmission rotates the drive shaft of the vehicle B after appropriately reducing the rotation speed transmitted from the AC motor. This drives vehicle B. To drive vehicle B, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of fluctuation in the accelerator pedal. Therefore, semiconductor device A10 in inverter 831 is necessary to output AC power with an appropriate frequency change to correspond to the required rotation speed of the AC motor.

The functions and effects of the semiconductor device A10 according to the first embodiment are as follows:

In the semiconductor device A10, the first heat dissipation member 60A and the second heat dissipation member 60B are insulated from each other. Therefore, even if the first die pad 10A is conductively joined to the first heat dissipation member 60A and the second die pad 10B is conductively joined to the second heat dissipation member 60B, it is possible to avoid inappropriate electrical connection between the first die pad 10A and the second die pad 10B. Therefore, it is not necessary to interpose an insulator between the first die pad 10A and the first heat dissipation member 60A, and between the second die pad 10B and the second heat dissipation member 60B. This makes it possible to more efficiently dissipate heat from the first semiconductor element 21 through the first die pad 10A and the first heat dissipation member 60A, and more efficiently dissipate heat from the second semiconductor element 22 through the second die pad 10B and the second heat dissipation member 60B. Therefore, it is possible to promote heat dissipation from the semiconductor device A10.

The multiple first protrusions 62A and multiple second protrusions 62B are exposed to the cooling fluid space 8. The cooling fluid space 8 contains an insulating cooling fluid. This allows heat to be dissipated more efficiently from the multiple first protrusions 62A and multiple second protrusions 62B while avoiding undue electrical conductivity between the first heat dissipation member 60A and the second heat dissipation member 60B.

The insulating portion 70 is separate from the sealing resin 50. Therefore, after forming the sealing resin 50, it is possible to electrically connect the first heat dissipation member 60A and the second heat dissipation member 60B, which are integrated by the insulating portion 70, to the first die pad 10A and the second die pad 10B. This is favorable for improving manufacturing efficiency.

The semiconductor device A10 includes a first semiconductor element 21, a second semiconductor element 22, and a sealing resin 50. The sealing resin 50 covers the first semiconductor element 21 and the second semiconductor element 22. With this configuration, the semiconductor device A10 has two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) packaged together using a single sealing resin 50. Therefore, the semiconductor device A10 can reduce the mounting area on the circuit board on which the semiconductor device A10 is mounted.

Other embodiments and modifications of the semiconductor device of the present disclosure are described below. The configurations of the various parts in each embodiment and each modification can be combined with each other to the extent that no technical contradictions arise.

First Modification of First Embodiment:
13 shows a first modified example of the semiconductor device A10. The semiconductor device A11 of this modified example is different from the semiconductor device A10 described above in that the semiconductor device A11 includes a plurality of first die pads 10A, a plurality of second die pads 10B, a plurality of sealing resins 50, a plurality of first heat dissipation members 60A, and a plurality of second heat dissipation members 60B.

The mutual configuration of the one first die pad 10A, the one second die pad 10B, the one first body portion 61A, and the one second heat dissipation member 60B is the same as that of the semiconductor device A10 described above. The one first die pad 10A and the one second die pad 10B are covered with one sealing resin 50. In the figure, three sealing resins 50 are lined up at a distance in the first direction x.

The three first heat dissipation members 60A and the three second heat dissipation members 60B are arranged alternately in the first direction x, corresponding to the three first die pads 10A and the three second die pads 10B. The insulating section 70 insulates the three first heat dissipation members 60A and the three second heat dissipation members 60B from each other.

This modified example also promotes heat dissipation. As can be understood from this modified example, the numbers of the first die pad 10A, the second die pad 10B, the first heat dissipation members 60A, the second heat dissipation members 60B, etc. are not limited in any way. The semiconductor device A11 is suitable for use as an inverter corresponding to three phases, for example, U phase, V phase, and W phase.

Second Modification of First Embodiment:
14 shows a second modification of the semiconductor device A 10. In the semiconductor device A12 of this modification, the sealing resin 50 and the insulating portion 70 are integrally formed.

In manufacturing the semiconductor device A12, for example, after completing the conductive joining between the first die pad 10A and the first heat dissipation member 60A and the conductive joining between the second die pad 10B and the second heat dissipation member 60B, the sealing resin 50 and the insulating portion 70 are formed in one step, for example by die molding.

This modified example also promotes heat dissipation. As can be seen from this modified example, the sealing resin 50 and the insulating section 70 may be separate bodies or may be formed integrally.

Third Modification of First Embodiment:
15 and 16 show a semiconductor device A13 according to a third modification of the first embodiment. The semiconductor device A13 is different from the semiconductor device A10 in the following respect: the first semiconductor element 21 of the semiconductor device A13 is a diode rather than a transistor.

The first semiconductor element 21 of the semiconductor device A13 has a first principal surface electrode 211 and a back surface electrode 213. As shown in FIG. 15, the first semiconductor element 21 of the semiconductor device A13 does not have a principal surface electrode 212. As shown in FIG. 16, the first semiconductor element 21 of the semiconductor device A13 is a diode, in which the first principal surface electrode 211 is, for example, an anode electrode, and the back surface electrode 213 is, for example, a cathode electrode.

As shown in FIG. 15, the semiconductor device A13 does not include either the first connection member 41A or the pair of second connection members 42A, 42B. In this configuration, as shown in FIG. 15 and FIG. 16, the fourth terminal lead 171, the sixth terminal lead 181, and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. Therefore, in the semiconductor device A13, the fourth terminal lead 171, the sixth terminal lead 181, and the seventh terminal lead 182 are non-connect terminals. In the example shown in FIG. 15, the semiconductor device A13 does not include either of the pair of second connection members 42A, 42B, but in a configuration different from this example, the semiconductor device A13 may include a pair of second connection members 42A, 42B similar to the semiconductor device A10.

As shown in FIG. 16, in the semiconductor device A13, the first principal surface electrode 211 (anode electrode) of the first semiconductor element 21 and the back surface electrode 223 (drain electrode) of the second semiconductor element 22 are electrically connected. In the semiconductor device A13, with respect to the power supply voltage (DC voltage) applied between the first terminal lead 14 and the second terminal lead 15, the high voltage side is a diode and the low voltage side is a transistor. The semiconductor device A13 is used, for example, as a boost chopper circuit.

Fourth Modification of First Embodiment:
17 and 18 show a semiconductor device A14 according to a fourth modification of the first embodiment. The semiconductor device A14 is different from the semiconductor device A10 in the following respect: the second semiconductor element 22 of the semiconductor device A14 is a diode rather than a transistor.

The second semiconductor element 22 of the semiconductor device A14 has a second principal surface electrode 221 and a back surface electrode 223. As shown in FIG. 17, the second semiconductor element 22 of the semiconductor device A14 does not have a principal surface electrode 222. As shown in FIG. 18, the second semiconductor element 22 of the semiconductor device A14 is a diode, in which the second principal surface electrode 221 is, for example, an anode electrode, and the back surface electrode 223 is, for example, a cathode electrode.

17, the semiconductor device A14 does not include either the first connection member 41B or the pair of second connection members 42A, 42B. In this configuration, as shown in FIGS. 17 and 18, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. Therefore, in the semiconductor device A14, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are non-connect terminals. In the example shown in FIG. 17, the semiconductor device A14 does not include either of the pair of second connection members 42A, 42B, but in a configuration different from this example, the semiconductor device A14 may include a pair of second connection members 42A, 42B similar to the semiconductor device A10.

As shown in FIG. 18, in the semiconductor device A14, the first principal surface electrode 211 (source electrode) of the first semiconductor element 21 and the back surface electrode 223 (cathode electrode) of the second semiconductor element 22 are electrically connected. In the semiconductor device A14, with respect to the DC voltage applied between the first terminal lead 14 and the second terminal lead 15, the high voltage side is a transistor and the low voltage side is a diode. The semiconductor device A14 is used, for example, as a step-down chopper circuit.

Fifth Modification of First Embodiment:
19 and 20 show a semiconductor device A15 according to a fifth modified example of the first embodiment. The semiconductor device A15 is different from the semiconductor device A10 in the following respect. That is, each of the first semiconductor element 21 and the second semiconductor element 22 of the semiconductor device A15 is a diode rather than a transistor.

The first semiconductor element 21 of the semiconductor device A15 has a first main surface electrode 211 and a back surface electrode 213. As shown in FIG. 19, the first semiconductor element 21 of the semiconductor device A15 does not have a main surface electrode 212. As shown in FIG. 20, the first semiconductor element 21 of the semiconductor device A15 is a diode, the first main surface electrode 211 is an anode electrode, and the back surface electrode 213 is a cathode electrode. The second semiconductor element 22 of the semiconductor device A15 has a second main surface electrode 221 and a back surface electrode 223. As shown in FIG. 19, the second semiconductor element 22 of the semiconductor device A15 does not have a main surface electrode 222. As shown in FIG. 20, the second semiconductor element 22 of the semiconductor device A15 is a diode, the second main surface electrode 221 is an anode electrode, and the back surface electrode 223 is a cathode electrode.

19, the semiconductor device A15 does not have either a pair of first connection members 41A, 41B or a pair of second connection members 42A, 42B. In this configuration, as shown in FIGS. 19 and 20, the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. Therefore, in the semiconductor device A15, the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are non-connect terminals. In the example shown in FIG. 19, the semiconductor device A15 does not have either of the pair of second connection members 42A, 42B, but in a configuration different from this example, the semiconductor device A15 may have a pair of second connection members 42A, 42B similar to the semiconductor device A10.

As shown in FIG. 20, in the semiconductor device A15, the first principal surface electrode 211 (anode electrode) of the first semiconductor element 21 and the back surface electrode 223 (cathode electrode) of the second semiconductor element 22 are electrically connected. In the semiconductor device A15, both the high voltage side and the low voltage side are diodes with respect to the power supply voltage (DC voltage) applied between the first terminal lead 14 and the second terminal lead 15. The semiconductor device A15 is a diode bridge circuit.

These modified examples also provide the same effects as semiconductor device A10.

As can be seen from the above semiconductor device A10 and semiconductor devices A13 to A15, the semiconductor device of the present disclosure can configure four types of power conversion circuits (bridge circuit using transistors, step-up chopper circuit, step-down chopper circuit, and bridge circuit using diodes) by combining the first semiconductor element 21 and the second semiconductor element 22. On the other hand, the configuration of each terminal lead 13 and the sealing resin 50 are common to each semiconductor device A10 and the semiconductor devices A13 to A15. Therefore, the semiconductor device of the present disclosure can configure any of the four types of power conversion circuits while keeping the appearance of the package the same. Furthermore, the semiconductor device of the present disclosure can utilize the configuration of each terminal lead 13 and the sealing resin 50 as it is, even if the first semiconductor element 21 and the second semiconductor element 22 are different in terms of whether they are transistors or diodes. As a result, the semiconductor device of the present disclosure can share the package structure regardless of which of the four types of power conversion circuits is used, which is preferable in terms of improving productivity.

Second embodiment:
21 and 22 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A20 of this embodiment is shown. The semiconductor device A20 differs from the semiconductor device A10 described above in terms of the conductive relationship between the first semiconductor element 21 and the second semiconductor element 22. In addition, in the description of the semiconductor device A20 and subsequent descriptions, the reference numerals of the respective parts of the first conductive member 31 are defined independently of the semiconductor device A10.

21, the first conductive member 31 interconnects the first main surface electrode 211 of the first semiconductor element 21, the second main surface electrode 221 of the second semiconductor element 22, and the first terminal lead 14. The first conductive member 31 is a metal plate. The first conductive member 31 is a metal clip. The composition of the first conductive member 31 includes, for example, copper. The first conductive member 31 is covered with a sealing resin 50. The first conductive member 31 includes a first joint 316, a second joint 317, a third joint 318, a first connecting portion 314, and a second connecting portion 315.

As shown in FIG. 21, the first bonding portion 316 is bonded to the first principal surface electrode 211 of the first semiconductor element 21. The first bonding portion 316 includes two strip portions 316a. The longitudinal direction of each of the two strip portions 316a is the first direction x. The two strip portions 316a are arranged parallel to each other in a plan view. Note that the first bonding portion 316 does not have to be separated into two strip portions 316a.

As shown in FIG. 21, the second bonding portion 317 is bonded to the second principal surface electrode 221 of the second semiconductor element 22. The second bonding portion 317 includes two strip portions 317a. The longitudinal direction of each of the two strip portions 317a is the first direction x. The two strip portions 317a are arranged parallel to each other in a plan view. Note that the second bonding portion 317 does not have to be separated into two strip portions 317a.

The third joint portion 318 is joined to the covering portion 14A of the first terminal lead 14 as shown in FIG. 21. The third joint portion 318 extends in the first direction x.

As shown in FIG. 21, the first connecting portion 314 is connected to the first bonding portion 316 and the second bonding portion 317. In the semiconductor device A20, the first connecting portion 314 is strip-shaped extending in the first direction x in a plan view.

As shown in FIG. 21, the second connecting portion 315 is connected to the first connecting portion 314 and the third joint portion 318. In the semiconductor device A20, the second connecting portion 315 is strip-shaped extending in the second direction y in a plan view. The second connecting portion 315 extends from the first connecting portion 314 in the second direction y and is connected to the third joint portion 318. In this embodiment, the second connecting portion 315 is connected to the center of the main body portion 314a of the first connecting portion 314 in the first direction x.

As shown in FIG. 22, in the semiconductor device A20 configured as described above, the first principal surface electrode 211 of the first semiconductor element 21 and the second principal surface electrode 221 of the second semiconductor element 22 are electrically connected to each other and are also commonly connected to the first terminal lead 14. In an example in which both the first semiconductor element 21 and the second semiconductor element 22 are MOSFETs, the semiconductor device A20 forms a circuit (a source common-connected circuit) in which the source electrodes of the two MOSFETs are commonly connected to one terminal (the first terminal lead 14).

This embodiment also promotes heat dissipation from the semiconductor device A20. As can be understood from this embodiment, the configuration of the electrical circuitry provided in the semiconductor device according to the present disclosure is not limited in any way.

First modified example of the second embodiment:
23 and 24 show a semiconductor device A21 according to a first modification of the second embodiment. The semiconductor device A21 is different from the semiconductor device A20 in the following respect: the first semiconductor element 21 of the semiconductor device A21 is a diode, not a transistor.

The first semiconductor element 21 of the semiconductor device A21 has a first principal surface electrode 211 and a back surface electrode 213. As shown in FIG. 23, the first semiconductor element 21 of the semiconductor device A21 does not have a principal surface electrode 212. As shown in FIG. 24, the first semiconductor element 21 of the semiconductor device A21 is a diode, in which the first principal surface electrode 211 is, for example, an anode electrode, and the back surface electrode 213 is, for example, a cathode electrode.

As shown in FIG. 23, the semiconductor device A21 does not include either the first connecting member 41A or the second connecting member 42A. In this configuration, as shown in FIGS. 23 and 24, the fourth terminal lead 171 and the sixth terminal lead 181 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22, respectively. Therefore, in the semiconductor device A21, the fourth terminal lead 171 and the sixth terminal lead 181 are each a non-connect terminal. Note that, unlike the example shown in FIGS. 23 and 24, the semiconductor device A21 does not further need to include the second connecting member 42B. In this case, the seventh terminal lead 182 is also a non-connect terminal.

As shown in FIG. 24, in the semiconductor device A21, the first principal surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second principal surface electrode 221 (source electrode) of the second semiconductor element 22 are electrically connected. In other words, in the semiconductor device A15, the anode electrode of the diode and the source electrode of the MOSFET are commonly connected to the first terminal lead 14 in the circuit configuration.

Second Modification of Second Embodiment:
25 and 26 show a semiconductor device A22 according to a second modification of the second embodiment. The semiconductor device A22 is different from the semiconductor device A20 in the following respect: each of the first semiconductor element 21 and the second semiconductor element 22 of the semiconductor device A22 is a diode rather than a transistor.

The first semiconductor element 21 of the semiconductor device A22 has a first main surface electrode 211 and a back surface electrode 213. As shown in FIG. 25, the first semiconductor element 21 of the semiconductor device A22 does not have a main surface electrode 212. As shown in FIG. 26, the first semiconductor element 21 of the semiconductor device A22 is a diode, the first main surface electrode 211 is an anode electrode, and the back surface electrode 213 is a cathode electrode. The second semiconductor element 22 of the semiconductor device A22 has a second main surface electrode 221 and a back surface electrode 223. As shown in FIG. 25, the second semiconductor element 22 of the semiconductor device A22 does not have a main surface electrode 222. As shown in FIG. 26, the second semiconductor element 22 of the semiconductor device A22 is a diode, the second main surface electrode 221 is an anode electrode, and the back surface electrode 223 is a cathode electrode.

As shown in FIG. 25, the semiconductor device A22 does not have a pair of first connecting members 41A, 41B or a pair of second connecting members 42A, 42B. In this configuration, as shown in FIG. 25 and FIG. 26, the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. Therefore, in the semiconductor device A22, the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are each a non-connect terminal.

As shown in FIG. 26, in the semiconductor device A22, the first principal surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second principal surface electrode 221 (anode electrode) of the second semiconductor element 22 are electrically connected. In other words, the semiconductor device A22 has a circuit configuration in which the anode electrodes of the two diodes are commonly connected to the first terminal lead 14. The semiconductor devices A21-A22 have a common configuration with the semiconductor device A20 and thus achieve the same effects as the semiconductor device A20.

As can be seen from the semiconductor devices A20 to A22, the semiconductor device of the present disclosure can configure, for example, three types of circuits (a circuit in which the source electrodes of two MOSFETs are commonly connected, a circuit in which the source electrode of a MOSFET and the anode electrode of a diode are commonly connected, and a circuit in which the anode electrodes of two diodes are commonly connected) in addition to the four types of circuits in the first embodiment by combining the first semiconductor element 21 and the second semiconductor element 22. On the other hand, the configuration of each terminal lead 13 and the sealing resin 50 are common to each of the semiconductor devices A20 to A22. Therefore, the semiconductor device of the present disclosure can configure any of a plurality of types of circuits while keeping the appearance of the package the same. Furthermore, the semiconductor device of the present disclosure can utilize the configuration of each terminal lead 13 and the sealing resin 50 as it is, even if the first semiconductor element 21 and the second semiconductor element 22 are different in terms of whether they are transistors or diodes. As a result, the semiconductor device of the present disclosure can standardize the package structure regardless of the plurality of types of circuits, which is preferable in terms of improving productivity.

The semiconductor device according to the present invention is not limited to the above-mentioned embodiment. The specific configuration of each part of the semiconductor device according to the present invention can be freely designed in various ways.

The present disclosure includes the embodiments described in the appended claims below.
Appendix 1.
A first die pad;
A second die pad;
a first semiconductor element mounted on the first die pad;
a second semiconductor element mounted on the second die pad;
a sealing resin that covers a portion of the first die pad, a portion of the second die pad, the first semiconductor element, and the second semiconductor element;
a first heat dissipation member electrically connected to the first die pad;
a second heat dissipation member electrically connected to the second die pad;
the semiconductor device further comprising: an insulating portion that exposes a portion of the first heat dissipation member and a portion of the second heat dissipation member and insulates the first heat dissipation member from the second heat dissipation member.
Appendix 2.
2. The semiconductor device according to claim 1, wherein the sealing resin and the insulating portion are separate bodies.
Appendix 3.
2. The semiconductor device according to claim 1, wherein the sealing resin and the insulating portion are integrally formed.
Appendix 4.
4. The semiconductor device according to claim 1, wherein the first heat dissipation member includes a first body portion that is conductively joined to the first die pad, and a plurality of first protrusions that protrude from the first body portion on a side opposite the first die pad.
Appendix 5.
5. The semiconductor device of claim 4, wherein the first protrusions are exposed and include a cooling fluid space for receiving an insulating cooling fluid.
Appendix 6.
5. The semiconductor device according to claim 1, wherein the second heat dissipation member includes a second body portion that is conductively joined to the second die pad, and a plurality of second protrusions that protrude from the second body portion on a side opposite the second die pad.
Appendix 7.
7. The semiconductor device of claim 6, wherein the plurality of second protrusions are exposed and include a cooling fluid space for the presence of an insulating cooling fluid.
Appendix 8.
8. The semiconductor device according to claim 1, wherein the first die pad and the second die pad are aligned in a first direction intersecting their respective thickness directions.
Appendix 9.
9. The semiconductor device described in claim 8, further comprising a first terminal lead that is spaced apart from the first die pad and the second die pad and protrudes in a second direction that intersects both the thickness direction and the first direction.
Appendix 10.
10. The semiconductor device according to claim 9, further comprising a second terminal lead connected to the first die pad and protruding in the second direction.
Appendix 11.
11. The semiconductor device according to claim 10, further comprising a third terminal lead connected to the second die pad and protruding in the second direction.
Appendix 12.
12. The semiconductor device according to claim 11, wherein the first terminal lead is located between the second terminal lead and the third terminal lead in the first direction.
Appendix 13.
13. The semiconductor device according to claim 1, wherein at least one of the first semiconductor element and the second semiconductor element is a switching element.
Appendix 14.
14. The semiconductor device according to claim 13, wherein the first semiconductor element and the second semiconductor element form a half-bridge circuit.
Appendix 15.
13. The semiconductor device according to claim 1, wherein at least one of the first semiconductor element and the second semiconductor element is a diode.
Appendix 16.
16. The semiconductor device according to claim 1, wherein the insulating portion includes a resin.
Appendix 17.
A driving source;
The semiconductor device according to claim 1,
The semiconductor device is electrically connected to the drive source.

A10 to A15, A17, A20 to A22: Semiconductor device 8: Cooling fluid space 10A: First die pad 10B: Second die pad 13: Terminal lead 14: First terminal lead 14A: Covered portion 14B: Exposed portion 15: Second terminal lead 15A: Covered portion 15B: Exposed portion 16: Third terminal lead 16A: Covered portion 16B: Exposed portion 21: First semiconductor element 21a: First main surface 21b: First back surface 22: Second semiconductor element 22a: Second main surface 22b: Second back surface 31: First conductive member 32: Second conductive member 33: First bonding layer 34: Second bonding layer 36: Fourth bonding layer 41A: First connecting member 41B: First connecting member 42A: Second connecting member 42B: Second connecting member 50: Sealing resin 51: Resin main surface 52: Resin back surface 53: First side surface 54: Second side surface 55: Third side surface 56: Recess 57: Groove 60A: First heat dissipation member 60B: Second heat dissipation member 61A: First main body portion 61B: Second main body portion 62A: First protrusion 62B: Second protrusion 69A: First bonding layer 69B: Second bonding layer 70: Insulating portion 71: Insulating main surface 72: Insulating back surface 77: Groove 81: On-board charger 82: Storage battery 83: Drive system 101: Main surface 102: Back surface 109: Trace 111: First end surface 112: Second end surface 113: Third end surface 114: Fourth end surface 122: Second corner end surface 123: Third corner end surface 124: Fourth corner end surface [0033] 171: fourth terminal lead 171A: covering portion 171B: exposed portion 172: fifth terminal lead 172A: covering portion 172B: exposed portion 181: sixth terminal lead 181A: covering portion 181B: exposed portion 182: seventh terminal lead 182A: covering portion 182B: exposed portion 211: first principal surface electrode 212: principal surface electrode 213: rear surface electrode 221: second principal surface electrode 222: principal surface electrode 223: rear surface electrode 231: die bonding layer 232: die bonding layer 311: first main body portion 311a: strip portion 312: first bonding portion 312a: first strip portion 313: second bonding portion 314: first connecting portion 314a: main body portion 315: second connecting portion 321: second main body portion 322: third bonding portion 323: Fourth joint portion 323a: Second band-shaped portion 581: Recess 582: Recess 589: Trace 611A: First heat dissipation main surface 611B: Second heat dissipation main surface 612A: First heat dissipation back surface 612B: Second heat dissipation back surface 831: Inverter 832: Driving source B: Vehicle x: First direction y: Second direction z: Thickness direction

Claims (17)

A first die pad;
A second die pad;
a first semiconductor element mounted on the first die pad;
a second semiconductor element mounted on the second die pad;
a sealing resin that covers a portion of the first die pad, a portion of the second die pad, the first semiconductor element, and the second semiconductor element;
a first heat dissipation member electrically connected to the first die pad;
a second heat dissipation member electrically connected to the second die pad;
the semiconductor device further comprising: an insulating portion that exposes a portion of the first heat dissipation member and a portion of the second heat dissipation member and insulates the first heat dissipation member from the second heat dissipation member. The semiconductor device according to claim 1, wherein the sealing resin and the insulating part are separate bodies. The semiconductor device according to claim 1, wherein the sealing resin and the insulating portion are integrally formed. The semiconductor device according to any one of claims 1 to 3, wherein the first heat dissipation member includes a first body portion that is conductively joined to the first die pad, and a plurality of first protrusions that protrude from the first body portion to the side opposite the first die pad. The semiconductor device according to claim 4, wherein the first protrusions are exposed and have a cooling fluid space for the presence of an insulating cooling fluid. The semiconductor device according to any one of claims 1 to 4, wherein the second heat dissipation member includes a second body portion that is conductively joined to the second die pad, and a plurality of second protrusions that protrude from the second body portion to the side opposite the second die pad. The semiconductor device of claim 6, wherein the plurality of second protrusions are exposed and have a cooling fluid space for the presence of an insulating cooling fluid. The semiconductor device according to any one of claims 1 to 7, wherein the first die pad and the second die pad are aligned in a first direction intersecting their respective thickness directions. The semiconductor device of claim 8, further comprising a first terminal lead that is spaced apart from the first die pad and the second die pad and protrudes in a second direction that intersects both the thickness direction and the first direction. The semiconductor device according to claim 9, further comprising a second terminal lead connected to the first die pad and protruding in the second direction. The semiconductor device according to claim 10, further comprising a third terminal lead connected to the second die pad and protruding in the second direction. The semiconductor device according to claim 11, wherein the first terminal lead is located between the second terminal lead and the third terminal lead in the first direction. The semiconductor device according to any one of claims 1 to 12, wherein at least one of the first semiconductor element and the second semiconductor element is a switching element. The semiconductor device according to claim 13, wherein the first semiconductor element and the second semiconductor element form a half-bridge circuit. The semiconductor device according to any one of claims 1 to 12, wherein at least one of the first semiconductor element and the second semiconductor element is a diode. The semiconductor device according to any one of claims 1 to 15, wherein the insulating portion includes a resin. A driving source;
The semiconductor device according to claim 1,
The semiconductor device is electrically connected to the drive source.

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