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WO2024218888A1 - Élément électroluminescent, dispositif d'affichage et procédé de fabrication d'élément électroluminescent - Google Patents

Élément électroluminescent, dispositif d'affichage et procédé de fabrication d'élément électroluminescent Download PDF

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WO2024218888A1
WO2024218888A1 PCT/JP2023/015585 JP2023015585W WO2024218888A1 WO 2024218888 A1 WO2024218888 A1 WO 2024218888A1 JP 2023015585 W JP2023015585 W JP 2023015585W WO 2024218888 A1 WO2024218888 A1 WO 2024218888A1
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light
emitting element
layer
emitting
element according
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Japanese (ja)
Inventor
一輝 丸橋
峻之 中
由基 福成
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Sharp Display Technology Corp
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Sharp Display Technology Corp
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Priority to CN202380097182.6A priority patent/CN120958947A/zh
Publication of WO2024218888A1 publication Critical patent/WO2024218888A1/fr
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers

Definitions

  • This disclosure relates to a light-emitting device, a display device, and a method for manufacturing a light-emitting device.
  • Patent Document 1 discloses a light-emitting element having a dipole layer between a hole transport layer and an active layer.
  • the dipole layer described in Patent Document 1 has low heat resistance.
  • a light-emitting element includes an anode and a cathode, a light-emitting layer located between the anode and the cathode, an inorganic layer located between the anode and the light-emitting layer, and an organic layer located between the inorganic layer and the light-emitting layer, the organic layer including a first functional group capable of bonding with the inorganic layer, a second functional group having hole transport properties, and a halogen.
  • the heat resistance of the organic layer is improved.
  • 1 is a cross-sectional view showing a configuration example of a light-emitting element according to the present disclosure.
  • 1 is a cross-sectional view showing a configuration example of a portion of a light-emitting element.
  • 3A and 3B are schematic diagrams illustrating examples of the configuration of organic molecules contained in an organic layer.
  • 1 is a structural formula showing an example of an organic molecule.
  • 1 is a structural formula showing a specific example of an organic molecule.
  • 2A to 2C are schematic diagrams illustrating examples of the configuration of a light-emitting layer containing an inorganic matrix material.
  • 1 is a block diagram showing a schematic configuration of a display device according to the present disclosure.
  • 1 is a flowchart illustrating a method for manufacturing a light-emitting device according to the present disclosure.
  • 1 is a flowchart showing Examples 1 to 4 and Comparative Examples 1 to 10.
  • 1 shows two tables showing the correspondence between Examples 1 to 4 and Comparative Examples 1 to 10 and combinations of organic molecule materials and baking temperatures for the hole transport layer.
  • 9B is a structural formula of the organic molecule shown in FIG. 9A.
  • 13 is a graph comparing a second element, a second comparative element, a fourth comparative element, and a sixth comparative element.
  • 13 is a graph comparing a second element, a second comparative element, a fourth comparative element, and a sixth comparative element.
  • 13 is a graph comparing a second element, a second comparative element, a fourth comparative element, and a sixth comparative element.
  • 1 is a graph comparing a first element, a first comparative element, a third comparative element, and a fifth comparative element.
  • 1 is a graph comparing a first element, a first comparative element, a third comparative element, and a fifth comparative element.
  • 1 is a graph comparing a first element, a first comparative element, a third comparative element, and a fifth comparative element.
  • 1 is a table summarizing the relationship between the organic molecule material, the baking temperature of the hole transport layer, and the driving voltage.
  • 1 is a table summarizing the relationship between the organic molecule material, the baking temperature of the hole transport layer, and the EQE. 13 is a graph comparing a fifth comparative element and a sixth comparative element. 1 is a graph comparing a first element and a second element. 13 is a graph comparing the third element, the fourth element, and the ninth comparative element and the tenth comparative element. 13 is a graph comparing the third element, the fourth element, and the ninth comparative element and the tenth comparative element. 13 is a graph comparing the third element, the fourth element, and the ninth comparative element and the tenth comparative element. 13 is a graph comparing the third element, the fourth element, and the ninth comparative element and the tenth comparative element. 1 is a table summarizing the relationship between the organic molecule material, the baking temperature of the hole transport layer, and the driving voltage.
  • 1 is a table summarizing the relationship between the organic molecule material, the baking temperature of the hole transport layer, and the EQE. 13 is a graph comparing the fifth to eighth comparative elements. 13 is a graph comparing the fifth to eighth comparative elements. 13 is a graph comparing the fifth to eighth comparative elements. 13 is a table summarizing the driving voltages and EQEs of the fifth to eighth comparative elements. 1 is a graph comparing the first element, the second element, and the fifth to eighth comparative elements. 1 is a graph and table showing thermogravimetric analysis results of several metal sulfide precursors. 1 is a structural formula of a precursor of multiple metal sulfides. 13 is a graph comparing the fifth element and the eleventh comparative element. 13 is a graph comparing the fifth element and the eleventh comparative element. 13 is a graph comparing the fifth element and the eleventh comparative element. 13 is a graph comparing the fifth element and the eleventh comparative element. 13 is a graph comparing the fifth element and
  • FIG. 1 is a cross-sectional view showing an example of the configuration of a light-emitting element according to the present disclosure.
  • FIG. 2 is a cross-sectional view showing an example of the configuration of a portion of a light-emitting element.
  • FIG. 3 is a schematic diagram showing an example of the configuration of organic molecules contained in an organic layer.
  • the light-emitting element 30 comprises, in order from the lower layer side (pixel circuit substrate 20 side), an anode 1, an inorganic layer 2, an organic layer 3, a hole transport layer 4, a light-emitting layer 5, an electron transport layer 6, and a cathode 7.
  • the light-emitting layer 5 may be a quantum dot light-emitting layer including a plurality of quantum dots 12.
  • the organic layer 3 includes a first functional group 9 capable of bonding with the inorganic layer 2, a second functional group 10 with hole transport properties, and a halogen 11.
  • the organic layer 3 may include a self-assembled monolayer 18.
  • the self-assembled monolayer 18 may include a plurality of self-assembled monomolecules (organic molecules) T including the first functional group 9, the second functional group 10, and a halogen 11.
  • the halogen 11 may be Br (bromine).
  • halogen 11 in organic layer 3 strengthens the bond between inorganic layer 2 and organic layer 3, improving the reliability and heat resistance of light-emitting element 30.
  • hole transport property hole injection property of organic layer 3 is enhanced, improving the carrier balance in light-emitting layer 5.
  • the inorganic layer 2 may contain metal oxide nanoparticles NP, and the self-assembled monolayer 18 may be bonded to the metal oxide nanoparticles NP.
  • a hole transport layer 4 including a cross-linking site may be provided between the organic layer 3 and the light-emitting layer 5.
  • the organic layer 3 has high heat resistance, and therefore has the advantage that the characteristics of the organic layer 3 are less likely to deteriorate even when placed in a high-temperature environment during cross-linking of the hole transport layer 4.
  • FIG. 4A is a structural formula showing an example of an organic molecule.
  • FIG. 4B is a structural formula showing a specific example of an organic molecule.
  • the halogen 11 contained in the organic layer 3 may be a substituent X that bonds to the first functional group 9 or the second functional group 10. In this case, the bond between the inorganic layer 2 and the organic layer 3 is enhanced.
  • the halogen 11 may be a substituent X that bonds to the second functional group 10, and the substituent X may be a Br group.
  • the organic molecule T in the organic layer 3 may be Br-2PACz.
  • the second functional group 10 includes a carbazole group, but is not limited to this.
  • the second functional group 10 may have at least one of a carbazole group, a tetracyano group, a triarylamine group, a thiophene group, a fluorene group, a quinone diimide group, a phthalocyanine group, a triphenylene group, and a phenylnaphthalene group.
  • a second functional group 10 with excellent hole transport properties can be realized.
  • the second functional group 10 may have at least one of a carbazole group, a thiophene group, a fluorene group, and a quinone diimide group. In this case, the size of the second functional group 10 is reduced, so that the steric hindrance between the organic molecules T is alleviated, and the organic layer 3 is less likely to peel off from the inorganic layer 2.
  • Examples of materials for the hole transport layer 4 include poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenylamine)] (abbreviated as "TFB”), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] (abbreviated as "Poly-TPD”), polyvinylcarbazole (abbreviated as "PVK”), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (abbreviated as "PTAA”), etc. These materials may be used alone or in combination of two or more types.
  • TFB poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl
  • Examples of materials for the electron transport layer 6 include ZnO (zinc oxide) nanoparticles, MgZnO (magnesium zinc oxide) nanoparticles, 2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (abbreviated as "TPBi”), etc. These materials may be used alone or in combination of two or more types.
  • the first functional group 9 may have at least one of a carboxyl group, a silanol group, a phosphono group, a thiol group, and an amino group. This allows for a first functional group 9 that is easily bonded to the inorganic layer 2.
  • the first functional group 9 may have a phosphono group. Since a phosphono group has three oxygen elements that can bond to the inorganic layer 2, in this case, the bondability of the first functional group 9 with the inorganic layer 2 is enhanced.
  • the first functional group 9 and the second functional group 10 may be bonded via a carbon chain R.
  • steric hindrance can be alleviated and interference between the organic molecules T coordinated to the inorganic layer 2 can be suppressed. This allows more organic molecules T to be coordinated to the inorganic layer 2, and an organic layer 3 with high bondability to the inorganic layer 2 and high hole transportability can be realized.
  • the carbon number of the carbon chain R may be 3 or less.
  • the inorganic layer 2 and the second functional group 10 are not too far apart, and an inorganic layer 2 with high hole transport properties can be realized.
  • the carbon number of the carbon chain R may be 2. In this way, the inorganic layer 2 and the second functional group 10 are not too far apart, and at the same time, steric hindrance is alleviated, allowing more organic molecules T to be coordinated to the inorganic layer 2, and ensuring high hole transport properties (hole injection properties).
  • the thickness of the organic layer 3 may be 0.5 nm or more. By physically separating the first functional group 9 and the second functional group 10, steric hindrance can be alleviated and interference between the organic molecules T coordinated to the inorganic layer 2 can be suppressed. This allows more organic molecules T to be coordinated to the inorganic layer 2, and an organic layer 3 with high bonding strength with the inorganic layer 2 and high hole transportability can be realized.
  • the thickness of the organic layer 3 may be 2 nm or less. In this way, the inorganic layer 2 and the second functional group 10 are not too far apart, so hole transportability (hole injection ability) can be ensured.
  • the inorganic layer 2 may contain at least one of NiO, MgO, MgNiO, LaNiO3 , CuO, Cu2O , MoO3 , and WO3 . This allows the inorganic layer 2 to have high hole injection ability.
  • the inorganic layer 2 may contain at least one of NiO, MgO, MgNiO, CuO, and Cu2O . In this case, the metal ions coordinated by the organic layer 3 are small, and the density of the positive charge is large, so that the bonding between the inorganic layer 2 and the organic layer 3 is enhanced.
  • the inorganic layer 2 may contain NiO.
  • the light-emitting layer 5 may include a plurality of light-emitting quantum dots 12.
  • the quantum dots 12 may emit blue light.
  • the quantum dots 12 refer to dots having a maximum width of 100 nm or less.
  • the shape of the quantum dots 12 may be within a range that satisfies the maximum width, and is not particularly restricted, and is not limited to a spherical three-dimensional shape (circular cross-sectional shape).
  • the shape of the quantum dots 12 may be, for example, a polygonal cross-sectional shape, a rod-like three-dimensional shape, a branch-like three-dimensional shape, a three-dimensional shape with unevenness on the surface, or a combination thereof.
  • the HOMO level of the plurality of luminescent quantum dots 12 may be deeper than -6.0 eV.
  • the HOMO level is the energy level of the highest occupied molecular orbital, and is expressed as a negative value (unit: eV) with the vacuum level as the reference (0).
  • the absolute value of the difference between the vacuum level and the HOMO level can be rephrased as the (absolute value of) ionization potential.
  • levels such as the HOMO level “deep” means "the corresponding ionization energy is large or far from the vacuum level,” and “shallow” means "the corresponding ionization energy is small or close to the vacuum level.”
  • the HOMO level can also be replaced with the top of the valence band (VBM).
  • the plurality of light-emitting quantum dots 12 may contain at least one of ZnSe, CdSe, ZnTe, CdTe, AlP, GaP, and AlAs. These materials have deep HOMO levels, so it is generally difficult to inject holes into these materials (applied voltage becomes large). However, in the light-emitting element 30, the organic layer 3 contains halogen 11, and the bond between the inorganic layer 2 and the organic layer 3 is strong, so that it is possible to inject holes into the quantum dots 12 while suppressing the driving voltage.
  • the light-emitting layer 5 includes an inorganic matrix material 13 that fills the spaces between the multiple light-emitting quantum dots 12, and the inorganic matrix material 13 may be a metal sulfide or a metal oxide.
  • the organic layer 3 has high heat resistance, so there is an advantage that the characteristics of the organic layer 3 are less likely to deteriorate even when placed in a high-temperature environment during firing of the light-emitting layer 5.
  • the inorganic matrix material 13 may be ZnS.
  • the elemental proportion of carbon in the inorganic matrix material 13 may be 10% or less. In this case, the formation reaction of the inorganic matrix material 13 proceeds sufficiently, and the quantum dots 12 are highly protected. In other words, since the organic layer 3 has high heat resistance, deterioration of characteristics can be suppressed even at high temperatures where the formation reaction of the inorganic matrix material 13 proceeds sufficiently.
  • the inorganic matrix material 13 means a material that contains and holds other substances, and can be referred to as a base material, a base material, or a filler.
  • the inorganic matrix material 13 may be a material that is solid at room temperature and contains and holds a plurality of luminescent quantum dots 12.
  • the inorganic matrix material 13 may be a component of the luminescent layer 5 that contains a plurality of luminescent quantum dots 12.
  • the inorganic matrix material 13 may be filled into the luminescent layer 5.
  • Figure 5 is a schematic diagram showing an example of the configuration of a luminescent layer that contains an inorganic matrix material. As shown in Figure 5, the inorganic matrix material 13 may fill the space between two adjacent quantum dots 12.
  • the material of the inorganic matrix material 13 desirably has a wider band gap than the material (e.g., core material) of the quantum dots 12.
  • a semiconductor or an insulator can be used as the material of the inorganic matrix material 13.
  • Examples of the material of the inorganic matrix material 13 include metal sulfides and/or metal oxides.
  • the metal sulfide may be, for example, zinc sulfide (ZnS), zinc magnesium sulfide (ZnMgS, ZnMgS 2 ), gallium sulfide (GaS, Ga 2 S 3 ), zinc tellurium sulfide (ZnTeS), magnesium sulfide (MgS), zinc gallium sulfide (ZnGa 2 S 4 ), or magnesium gallium sulfide (MgGa 2 S 4 ).
  • the metal oxide may be zinc oxide (ZnO), titanium oxide ( TiO2 ), tin oxide ( SnO2 ), tungsten oxide ( WO3 ), zirconium oxide ( ZrO2 ), or silicon dioxide ( SiO2 ).
  • the chemical formulas in parentheses after the compound names are representative examples.
  • the composition ratios described in the chemical formulas are preferably stoichiometric so that the composition of the actual compounds is as shown in the chemical formulas, but are not necessarily stoichiometric.
  • the inorganic matrix material 13 may be amorphous.
  • FIG. 6 is a schematic diagram showing an example of the configuration of a display device according to this embodiment.
  • the display device 50 includes a display unit DA, a first driver circuit D1 (e.g., a data signal line drive circuit) and a second driver circuit D2 (e.g., a scanning signal line drive circuit, a light emission control line drive circuit) that drive the display unit DA, and a control circuit CL that controls the first driver circuit D1 and the second driver circuit D2.
  • the display unit DA may include a pixel circuit layer and a light emitting element layer.
  • the light emitting element layer may include a light emitting element 30R (30) that emits red light, a light emitting element 30G (30) that emits green light, and a light emitting element 30B (30) that emits blue light, and each of the light emitting elements 30R, 30G, and 30B may be connected to a pixel circuit PC formed in the pixel circuit layer.
  • FIG. 7 is a flowchart showing a method for manufacturing a light-emitting element according to the present disclosure.
  • the method for manufacturing a light-emitting element 30 includes steps S10 to S50.
  • Step S10 is a step for forming an anode 1.
  • Step S20 is a step for forming an inorganic layer 2 above the anode 1.
  • the "upper layer” refers to a layer formed in a process later than the layer to be compared, or its position.
  • Step S30 is a step for forming an organic layer 3 above the inorganic layer 2, the organic layer 3 including a first functional group 9 capable of bonding with the inorganic layer 2, a second functional group 10 having hole transport properties, and a halogen 11.
  • Step S40 is a step for forming a light-emitting layer 5 above the organic layer 3.
  • Step S50 is a step for forming a cathode 7 above the light-emitting layer 5.
  • steps S10 to S50 are performed in this order, but the order of steps S10 to S50 is not limited within the scope of the light-emitting element 30 that can be manufactured.
  • the first coating liquid containing an organic hole transport material may be baked at a temperature range of 110°C to 350°C to form the hole transport layer 4, and then the light-emitting layer 5 may be formed.
  • the second coating liquid containing a plurality of quantum dots 12 and a metal sulfide precursor may be baked at a temperature range of 110°C to 350°C to form the light-emitting layer 5.
  • the organic layer 3 is placed in a high-temperature environment during the baking of the light-emitting layer 5, so that the advantage of the light-emitting element 30, that is, high heat resistance, becomes prominent.
  • Baking at a temperature exceeding 350°C is not preferable because, for example, the TFT formed on the substrate may be damaged or the anode 1 may be denatured by heat, increasing the resistance.
  • baking at a temperature exceeding 350°C is likely to weaken the bond between the inorganic layer 2 and the organic layer 3, even though the light-emitting element 30 has high heat resistance.
  • the organic hole transport material may have a thermally crosslinkable functional group.
  • the hole transport layer 4 may have a crosslinking site. By baking the hole transport layer 4 having a thermally crosslinking site, thermal crosslinking can be performed, making it difficult for the film to be reduced in a later process, for example.
  • the hole transport layer 4 can be thermally crosslinked while suppressing deterioration of the light-emitting characteristics of the light-emitting element 30.
  • the precursor of the metal sulfide contained in the second coating liquid may contain a dithiocarboxylic acid.
  • the precursor may contain a dialkylthiourea. Each of these can provide a precursor that reacts even at a low baking temperature.
  • the dithiocarboxylic acid can be xanthic acid. This can provide a precursor that reacts even at about 125°C.
  • the temperature range for the baking may be 125°C or higher and lower than 350°C. This allows the precursor containing xanthogenic acid to react relatively quickly.
  • the second coating liquid may be baked at a temperature range of 150°C or higher and 350°C or lower. This allows the precursor containing xanthogenic acid to react almost completely, and the precursor containing dialkylthiourea to react relatively quickly.
  • the second coating liquid may be baked at a temperature range of 200°C or higher and 350°C or lower. This allows the precursor containing dialkylthiourea to react almost completely.
  • the cathode 7 may be formed using a sputtering method. Generally, sputtering is likely to damage the underlying layers, but the method for manufacturing the light-emitting element 30 can strengthen the bond between the inorganic layer 2 and the organic layer 3, thereby suppressing deterioration of the various optical properties of the light-emitting element 30.
  • the method for manufacturing the light-emitting element 30 may include the steps of forming a hole injection layer (inorganic layer 2) containing metal oxide nanoparticles, forming a self-assembled monolayer (organic layer 3) containing a first functional group 9 capable of bonding with a metal oxide contained in the metal oxide nanoparticles, a second functional group 10 having hole transport properties, and a halogen 11, and forming a hole transport layer 4 by baking a first coating liquid containing a crosslinkable organic compound at 110°C or higher, which is applied onto the self-assembled monolayer.
  • the crosslinkable organic compound may be an organic hole transport material having a thermally crosslinkable functional group.
  • the method for manufacturing the light-emitting element 30 may include a step of forming the light-emitting layer 5 by baking a second coating liquid containing quantum dots 12 and a metal sulfide precursor that has a weight loss rate of 50% or more when heated from 50°C to 200°C after forming the hole transport layer 4.
  • Embodiment 1 As examples, a total of four light-emitting elements 30 were manufactured.
  • the manufacturing methods for the four light-emitting elements 30 are referred to as Examples 1 to 4, respectively, and the four light-emitting elements 30 are referred to as a first element to a fourth element, respectively.
  • a total of 10 light-emitting elements were manufactured as comparative examples.
  • the manufacturing methods for these 10 light-emitting elements are referred to as Comparative Examples 1 to 10, respectively, and these 10 light-emitting elements are referred to as the first comparative element to the tenth comparative element, respectively.
  • FIG. 8 is a flow chart showing each of Examples 1 to 4 and Comparative Examples 1 to 10.
  • FIG. 9A shows two correspondence tables 1001 and 1002 showing the correspondence between Examples 1 to 4 and Comparative Examples 1 to 10 and combinations of organic molecule materials and baking temperatures for the hole transport layer 4.
  • FIG. 9B shows the structural formulas of the organic molecules shown in FIG. 9A.
  • Step SA is a step of forming an anode 1.
  • Step SB is a step of forming an inorganic layer 2.
  • Step SC is a step of forming an organic layer 3.
  • Step SD is a step of forming a hole transport layer 4.
  • Step SE is a step of forming a light-emitting layer 5.
  • Step SF is a step of forming an electron transport layer 6.
  • Step SG is a step of forming a cathode 7.
  • step SA The contents of step SA are the same in Examples 1 to 4 and Comparative Examples 1 to 10.
  • step SA a 30 nm thick ITO film was formed as anode 1 on the substrate by sputtering.
  • step SB The contents of step SB are common to Examples 1 to 4 and Comparative Examples 1 to 10.
  • a specific process was repeated four times to form the inorganic layer 2.
  • the specific process is a process in which a solution in which nickel oxide nanoparticles are dispersed at 15 mg/mL in a solvent in which water and 2-methoxyethanol are mixed in equal volumes is applied by spin coating, and then baked at 200°C.
  • the number of times the specific process is repeated is not limited to four times, and may be, for example, one to five times.
  • step SG The contents of step SG are the same for Examples 1 to 4 and Comparative Examples 1 to 10.
  • step SG a 50 nm thick Ag film was formed as the cathode 7 by vacuum deposition.
  • step SC The contents of step SC are common to Examples 1 to 4 and Comparative Examples 1 to 10, except for the material of organic molecule T.
  • step SC in an N2 atmosphere, a solution in which organic molecule T is dispersed in an ethanol solvent to a concentration of 0.01 M is applied to the NiO x layer by spin coating, and then the solvent is evaporated by baking to form an organic layer 3 having a thickness of 1.2 nm.
  • the following material was selected as organic molecule T.
  • step SD The contents of step SD are the same in Examples 1 to 4 and Comparative Examples 1 to 10, except for the baking temperature of the hole transport layer 4.
  • step SD a solution in which molecules in which a crosslinkable unit has been introduced into TFB are dispersed in a chlorobenzene solvent is applied to the organic layer 3 by spin coating in an N2 atmosphere, and then the hole transport layer 4 is baked by heating for 30 minutes.
  • the baking temperatures of the hole transport layer 4 were as follows:
  • step SE the contents of step SE are as follows:
  • Example 1 and 2 In an N2 atmosphere, a solution in which InP quantum dot phosphor particles (quantum dots 12) emitting red light were dispersed in an octane solvent was applied by spin coating to form a light emitting layer 5 having a thickness of 14 nm.
  • Examples 3 and 4, and Comparative Examples 9 and 10 In an N2 atmosphere, a solution in which ZnSeTe quantum dot phosphor particles (quantum dots 12) emitting blue light were dispersed in an octane solvent was applied by spin coating to form a light emitting layer 5 having a thickness of 28 nm.
  • step SF the contents of step SF are common except for the material of the nanoparticles.
  • step SF a solution in which nanoparticles with a particle size of 5 nm are dispersed in an ethanol solvent is applied to the light-emitting layer 5 by spin coating under an N2 atmosphere to form an electron transport layer 6 with a film thickness of 60 nm.
  • This electron transport layer 6 is a nanoparticle film.
  • the following materials were selected as the nanoparticles.
  • the electron transport layer 6 may be a non-doped ZnO nanoparticle film.
  • the electron transport layer 6 may be a ZnO nanoparticle film doped with at least one of Li, Al, Ti, Ga, and Zr in addition to Mg. Instead of the ZnO nanoparticle film, a TiO 2 film or a ZrO 2 film may be formed.
  • FIGs. 10 to 12 are graphs comparing the second element, the second comparative element, the fourth comparative element, and the sixth comparative element.
  • FIGs. 13 to 15 are graphs comparing the first element, the first comparative element, the third comparative element, and the fifth comparative element.
  • the horizontal axis indicates the applied voltage in units of [V]
  • the vertical axis indicates the current density in units of [mA/cm 2 ].
  • the horizontal axis indicates the applied voltage in units of [V]
  • the vertical axis indicates the luminance in units of [nit].
  • FIGs. 12 and 15 the horizontal axis indicates the current density in units of [mA/cm 2 ], and the vertical axis indicates the EQE in units of [%].
  • Fig. 16 is a table summarizing the relationship between the material of the organic molecule T, the baking temperature of the hole transport layer 4, and the driving voltage.
  • Fig. 17 is a table summarizing the relationship between the material of the organic molecule T, the baking temperature of the hole transport layer 4, and the EQE.
  • Each of Fig. 16 and Fig. 17 shows the relationship when the current density is 25 mA/ cm2 . All of these materials of the organic molecule T, the baking temperature of the hole transport layer 4, the driving voltage, the EQE, and the current density are those of a light-emitting element that emits red light.
  • the second element, the fourth comparative element, and the sixth comparative element all have a lower driving voltage and a higher EQE than the second comparative element. From the above, when the baking temperature of the hole transport layer 4 is 110°C, there is no significant difference in optical properties between the second element, the fourth comparative element, and the sixth comparative element.
  • the baking temperature of the hole transport layer 4 is 200°C
  • the optical characteristics of the first element, the third comparative element, and the fifth comparative element are significantly different, and when these are compared, it can be said that the optical characteristics of the first element are the best.
  • the increase in drive voltage of the first element compared to the second element is less than 1 V, and the decrease in EQE is 0.2%.
  • the degree of degradation of the optical characteristics of the first element compared to the second element is minimal.
  • the first comparison element has an increase in drive voltage of more than 2V and a decrease in EQE of just under 1%.
  • the third comparison element has an increase in drive voltage of 5V and a decrease in EQE of just under 3%.
  • the fifth comparison element has an increase in drive voltage of more than 4V and a decrease in EQE of more than 2%.
  • the degree of deterioration of the optical properties of the first comparison element relative to the second comparison element is greater than the degree of deterioration of the optical properties of the first element relative to the second element.
  • the degree of deterioration of the optical properties of the third comparison element relative to the fourth comparison element, and the degree of deterioration of the optical properties of the fifth comparison element relative to the sixth comparison element are similar to the degree of deterioration of the optical properties of the first comparison element relative to the second comparison element.
  • halogen 11 strengthens the bond between inorganic layer 2 and organic layer 3, improving the heat resistance of the light-emitting element. It can be seen that the application of an electron-donating substituent in place of halogen 11 weakens the bond between inorganic layer 2 and organic layer 3, which can cause a decrease in the heat resistance of the light-emitting element.
  • Fig. 18 is a graph comparing the fifth comparative element and the sixth comparative element.
  • Fig. 19 is a graph comparing the first element and the second element.
  • the horizontal axis indicates the light emission time in units of [h]
  • the vertical axis indicates the light emission luminance in units of [nit].
  • Each of Fig. 18 and Fig. 19 shows the comparison results when the current density is 25 mA/ cm2 .
  • the ratio of the LT50 of the fifth comparative element to the LT50 of the sixth comparative element is 8.1%.
  • the LT50 of the fifth comparative element is 28.7 h.
  • the ratio of the LT50 of the first element to the LT50 of the second element is 72%.
  • the LT50 of the first element is 143.8 h.
  • LT50 is X at which the emission luminance of the light-emitting element at an emission time of Xh is half the emission luminance of the light-emitting element at an emission time of 0 h.
  • halogen 11 If an electron-donating substituent is used instead of halogen 11, the reliability of the light-emitting device is low when the baking temperature of the hole transport layer 4 is 200°C.
  • halogen 11 By using halogen 11, the bond between the inorganic layer 2 and the organic layer 3 is strengthened, so that the reliability of the light-emitting device is high even when the baking temperature of the hole transport layer 4 is 200°C.
  • FIG. 20 to 22 are graphs comparing the third and fourth elements, and the ninth and tenth comparative elements, respectively.
  • the horizontal axis shows the applied voltage in units of [V]
  • the vertical axis shows the current density in units of [mA/cm 2 ].
  • the horizontal axis shows the applied voltage in units of [V]
  • the vertical axis shows the luminance in units of [nit].
  • the horizontal axis shows the current density in units of [mA/cm 2 ]
  • the vertical axis shows the EQE in units of [%].
  • Fig. 23 is a table summarizing the relationship between the material of the organic molecule T, the baking temperature of the hole transport layer 4, and the driving voltage.
  • Fig. 24 is a table summarizing the relationship between the material of the organic molecule T, the baking temperature of the hole transport layer 4, and the EQE.
  • Each of Fig. 23 and Fig. 24 shows the relationship when the current density is 25 mA/ cm2 . All of these materials of the organic molecule T, the baking temperature of the hole transport layer 4, the driving voltage, the EQE, and the current density are for a light-emitting element that emits blue light.
  • the baking temperature of the hole transport layer 4 is 200°C
  • the optical characteristics of the light-emitting device are better when halogen 11 is used than when an electron-donating substituent is used instead of halogen 11.
  • the baking temperature of the hole transport layer 4 is 110°C
  • the optical characteristics of the light-emitting device are better when halogen 11 is used than when an electron-donating substituent is used instead of halogen 11.
  • halogen 11 strengthens the bond between inorganic layer 2 and organic layer 3, which is thought to enhance the hole injection ability of the inorganic layer 2, organic layer 3, and hole transport layer 4 in that order.
  • the HOMO level of the InP quantum dot phosphor particles is shallow, so hole injection into the quantum dots 12 is relatively easy, and there is little difference in the characteristics of the organic layer 3 depending on the firing temperature of the hole transport layer 4.
  • the HOMO level of the ZnSeTe quantum dot phosphor particles is deep, making it difficult to inject holes into the quantum dots 12.
  • the stronger bond between the inorganic layer 2 and the organic layer 3 increases the hole injection ability, improving the carrier balance, and when the baking temperature of the hole transport layer 4 is 110°C, a light-emitting element with a high EQE can be realized.
  • the effect of the light-emitting element 30 is remarkable when multiple light-emitting quantum dots 12 emit blue light.
  • Figures 25 to 27 are graphs comparing the fifth to eighth comparative elements, respectively.
  • the horizontal axis shows the applied voltage in units of [V]
  • the vertical axis shows the current density in units of [mA/cm 2 ].
  • the horizontal axis shows the applied voltage in units of [V]
  • the vertical axis shows the luminance in units of [nit].
  • the horizontal axis shows the current density in units of [mA/cm 2 ]
  • the vertical axis shows the EQE in units of [%].
  • Fig. 28 is a table summarizing the driving voltage and EQE of the fifth to eighth comparative elements.
  • Fig. 28 shows values when the current density is 25 mA/ cm2 .
  • Fig. 29 is a graph comparing the first and second elements and the fifth to eighth comparative elements.
  • the horizontal axis shows the baking temperature of the hole transport layer 4, and the vertical axis shows the applied voltage in units of [V] and the EQE in units of [%].
  • the baking temperature of the hole transport layer 4 is from 110°C to 200°C, the significance of X(11) (see Figure 4A) being Br is significant.
  • the baking temperature of the hole transport layer 4 is less than 110°C, it is difficult to form a hole transport layer 4 that includes a crosslinked site.
  • Example 5 A light-emitting element 30 (fifth element) was manufactured in Example 5, which is different from Examples 1 to 4. In Example 5, the following steps are carried out.
  • the first and second solutions were mixed and, with the upper layer of the first solution and the lower layer of the second solution separated, the mixture was vigorously stirred for 24 hours in a container with a stir bar.
  • the red quantum dots were transferred from the layer of the first solution to the layer of the second solution, and ethylxanthogenate and iodide ions were coordinated to each quantum dot. This completes the replacement of the ligands coordinated to the red quantum dots.
  • the first solution was removed from the mixture of the first and second solutions by removing the hexane together with the organic ligand, and ethyl acetate was added to the remaining second solution. This resulted in the precipitation of the red quantum dots and the ethylxanthogenate and iodide ions coordinated to these quantum dots. On the other hand, zinc iodide and zinc ethylxanthate did not precipitate, but remained in the mixed solvent of NMF and ethyl acetate. Ethyl acetate is a medium polarity solvent, and other medium polarity solvents may also be used.
  • DMF N,N-dimethylformamide
  • THT tetrahydrothiophene
  • the precursor of the metal sulfide may contain, for example, a metal acetate, a metal nitrate, or a metal halide as a metal source.
  • the precursor of the metal sulfide may contain, for example, a dithiocarboxylic acid as a sulfur source.
  • the dithiocarboxylic acid may be, for example, xanthic acid.
  • the precursor of the metal sulfide may contain, for example, thiourea, monoalkylthiourea, dialkylthiourea, trialkylthiourea, or tetraalkylthiourea as a sulfur source.
  • the monoalkylthiourea may be N-methylthiourea
  • the dialkylthiourea may be N,N'-dimethylthiourea
  • the trialkylthiourea may be trimethylthiourea
  • the tetraalkylthiourea may be tetramethylthiourea.
  • the precursor of the metal sulfide may contain, for example, thioacetamide as a sulfur source.
  • the precursor of the metal sulfide may contain a metal complex coordinated with the sulfur source.
  • Figure 30A is a graph and table showing the results of thermogravimetric analysis of precursors of multiple metal sulfides.
  • Figure 30B shows the structural formulas of precursors of multiple metal sulfides. Even for xanthogenic acid, which has a low reaction temperature among precursors of multiple metal sulfides, the weight loss in thermogravimetric analysis starts at 125°C, so it is thought that the reaction of the precursor does not proceed below 125°C. Since the weight loss is steep and almost completely completed by 150°C, it is found that it is preferable to heat the precursor at 150°C or higher.
  • a coating liquid containing quantum dots 12 and a metal sulfide precursor whose weight loss rate when heated from 50°C to 200°C is baked to form a light-emitting layer 5 containing an inorganic matrix material 13 that is a metal sulfide.
  • step SD of Example 5 a solution of PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]) dispersed in a chlorobenzene solvent was applied to the organic layer 3 by spin coating in an N2 atmosphere, and then the layer was heated at a temperature of 150°C for 30 minutes to bake a hole transport layer 4 having a thickness of 30 nm.
  • This hole transport layer 4 is PTAA.
  • a Poly-TPD film, a TFB film, or a PVK film may be formed.
  • step SE of Example 5 the coating solution was applied by spin coating, and then heated at a temperature of 150°C for 30 minutes to form a light-emitting layer 5 containing an inorganic matrix material 13.
  • a baking temperature of 150°C or higher for the light-emitting layer 5 is preferable in that the precursor of the metal sulfide is completely reacted to form the metal sulfide, thereby enhancing the protective effect on the quantum dots 12.
  • a baking temperature of 200°C or higher for the light-emitting layer 5 is even more preferable.
  • Example 5 includes steps SA to SG (see FIG. 8). The contents of steps SA to SC, step SF, and step SG are common to Examples 1, 2, and 5.
  • a light-emitting element (11th comparative element) was manufactured in Comparative Example 11, which is different from Comparative Examples 1 to 10.
  • Comparative Example 11 includes steps SA to SG (see FIG. 8). The contents of steps SA to SC, step SF, and step SG are common to Comparative Examples 5 to 8 and Comparative Example 11. The contents of steps SD and SE are common to Example 5 and Comparative Example 11.
  • Br-2PACz was used as the organic molecule T
  • MeO-2PACz was used as the organic molecule T.
  • FIG. 31 to 34 are graphs comparing the fifth element and the eleventh comparative element.
  • the horizontal axis shows the applied voltage in units of [V]
  • the vertical axis shows the current density in units of [mA/cm 2 ].
  • the horizontal axis shows the applied voltage in units of [V]
  • the vertical axis shows the luminance in units of [nit].
  • the horizontal axis shows the current density in units of [mA/cm 2 ]
  • the vertical axis shows the EQE in units of [%].
  • the horizontal axis shows the luminance time in units of [h]
  • the vertical axis shows the luminance in units of [nit].
  • FIG. 34 shows the comparison results when the current density is 25 mA/cm 2 .
  • the EQE of the fifth element at a current density of 25 mA/ cm2 is improved by 0.5%, from 3.9% to 4.4%, and the driving voltage at a current density of 25 mA/ cm2 is reduced by 1.5 V, from 7.2 V to 5.7 V.
  • the bond between the inorganic layer 2 and the organic layer 3 is strengthened, so that the heat resistance of the light-emitting element is improved, and the optical characteristics of the light-emitting element are excellent even when the baking temperature of the light-emitting layer 5 containing the inorganic matrix material 13 is 150°C.
  • the LT50 of the fifth element is 296.6 h
  • the LT50 of the eleventh comparative element is 231.0 h.

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Abstract

La présente invention comprend : une anode et une cathode ; une couche électroluminescente positionnée entre l'anode et la cathode ; une couche inorganique positionnée entre l'anode et la couche électroluminescente ; et une couche organique positionnée entre la couche inorganique et la couche électroluminescente. La couche organique contient un premier groupe fonctionnel qui peut être lié à la couche inorganique, un second groupe fonctionnel qui a une propriété de transport de trous, et un halogène.
PCT/JP2023/015585 2023-04-19 2023-04-19 Élément électroluminescent, dispositif d'affichage et procédé de fabrication d'élément électroluminescent Pending WO2024218888A1 (fr)

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CN202380097182.6A CN120958947A (zh) 2023-04-19 2023-04-19 发光元件、显示装置以及发光元件的制造方法

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006009124A1 (fr) * 2004-07-16 2006-01-26 National Institute Of Advanced Industrial Science And Technology Matériau fluorescent et procédé pour la fabrication de celui-ci
JP2010520603A (ja) * 2007-03-08 2010-06-10 イーストマン コダック カンパニー 量子ドット発光デバイス
CN102916097A (zh) * 2011-08-01 2013-02-06 潘才法 一种电致发光器件
WO2020174594A1 (fr) * 2019-02-26 2020-09-03 シャープ株式会社 Dispositif électroluminescent, dispositif d'affichage
JP2020530195A (ja) * 2017-08-08 2020-10-15 グァンドン ジュフア プリンテッド ディスプレイ テクノロジー カンパニー リミテッド エレクトロルミネセント素子および発光層ならびにその用途
WO2022153535A1 (fr) * 2021-01-18 2022-07-21 シャープ株式会社 Dispositif d'affichage et procédé de production de dispositif d'affichage
WO2023053450A1 (fr) * 2021-10-01 2023-04-06 シャープディスプレイテクノロジー株式会社 Élément électroluminescent, dispositif d'affichage et procédé de fabrication d'élément électroluminescent
WO2023053451A1 (fr) * 2021-10-01 2023-04-06 シャープディスプレイテクノロジー株式会社 Élément électroluminescent, dispositif d'affichage et procédé de fabrication d'élément électroluminescent

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006009124A1 (fr) * 2004-07-16 2006-01-26 National Institute Of Advanced Industrial Science And Technology Matériau fluorescent et procédé pour la fabrication de celui-ci
JP2010520603A (ja) * 2007-03-08 2010-06-10 イーストマン コダック カンパニー 量子ドット発光デバイス
CN102916097A (zh) * 2011-08-01 2013-02-06 潘才法 一种电致发光器件
JP2020530195A (ja) * 2017-08-08 2020-10-15 グァンドン ジュフア プリンテッド ディスプレイ テクノロジー カンパニー リミテッド エレクトロルミネセント素子および発光層ならびにその用途
WO2020174594A1 (fr) * 2019-02-26 2020-09-03 シャープ株式会社 Dispositif électroluminescent, dispositif d'affichage
WO2022153535A1 (fr) * 2021-01-18 2022-07-21 シャープ株式会社 Dispositif d'affichage et procédé de production de dispositif d'affichage
WO2023053450A1 (fr) * 2021-10-01 2023-04-06 シャープディスプレイテクノロジー株式会社 Élément électroluminescent, dispositif d'affichage et procédé de fabrication d'élément électroluminescent
WO2023053451A1 (fr) * 2021-10-01 2023-04-06 シャープディスプレイテクノロジー株式会社 Élément électroluminescent, dispositif d'affichage et procédé de fabrication d'élément électroluminescent

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GEDDA MURALI, GKEKA DESPOINA, NUGRAHA MOHAMAD INSAN, SCACCABAROZZI ALBERTO D., YENGEL EMRE, KHAN JAFAR I., HAMILTON IAIN, LIN YUAN: "High‐Efficiency Perovskite–Organic Blend Light‐Emitting Diodes Featuring Self‐Assembled Monolayers as Hole‐Injecting Interlayers", ADVANCED ENERGY MATERIALS, vol. 13, no. 33, 1 September 2023 (2023-09-01), DE , pages 1 - 10, XP093222687, ISSN: 1614-6832, DOI: 10.1002/aenm.202201396 *

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