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WO2024214659A1 - Electrostatic chuck device - Google Patents

Electrostatic chuck device Download PDF

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Publication number
WO2024214659A1
WO2024214659A1 PCT/JP2024/014186 JP2024014186W WO2024214659A1 WO 2024214659 A1 WO2024214659 A1 WO 2024214659A1 JP 2024014186 W JP2024014186 W JP 2024014186W WO 2024214659 A1 WO2024214659 A1 WO 2024214659A1
Authority
WO
WIPO (PCT)
Prior art keywords
flow path
hole
electrostatic chuck
arc
chuck device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/014186
Other languages
French (fr)
Japanese (ja)
Inventor
勇貴 金原
拓 一由
敏祥 乾
徹 菅又
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Osaka Cement Co Ltd
Original Assignee
Sumitomo Osaka Cement Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Osaka Cement Co Ltd filed Critical Sumitomo Osaka Cement Co Ltd
Priority to KR1020257031649A priority Critical patent/KR20250153272A/en
Priority to CN202480019812.2A priority patent/CN120937128A/en
Publication of WO2024214659A1 publication Critical patent/WO2024214659A1/en
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to an electrostatic chuck device.
  • This application claims priority based on Japanese Patent Application No. 2023-066281, filed on April 14, 2023, the contents of which are incorporated herein by reference.
  • Patent Document 1 discloses a configuration that includes a plate-shaped ceramic body that includes a mounting surface, and a base member that has a cooling passage inside for flowing a cooling medium.
  • the present invention was made in consideration of the above circumstances, and aims to provide an electrostatic chuck device with high thermal uniformity.
  • the present invention provides an electrostatic chuck device comprising: a plate-shaped electrostatic chuck portion having a mounting surface on which a plate-shaped sample is placed and an electrode for electrostatic attraction provided therein; and a base portion that is disk-shaped about a central axis and supports the electrostatic chuck portion on a support surface from an opposite side to the mounting surface, wherein the base portion has a through hole penetrating the base portion in an axial direction of the central axis, and a coolant flow path provided inside the base portion and extending along the support surface, the coolant flow path having a first flow path portion formed at an interval outward in a hole diameter direction centered on the through hole, and second flow path portions located on both sides of the first flow path portion in an extension direction of the coolant flow path, and a flow path cross-sectional area of the first flow path portion is smaller than a flow path cross-sectional area of the second flow path portion.
  • an electrostatic chuck device comprising: a plate-shaped electrostatic chuck portion having a mounting surface on which a plate-shaped sample is placed and having an electrode for electrostatic attraction provided therein; and a base portion which is disk-shaped about a central axis and supports the electrostatic chuck portion on a support surface opposite to the mounting surface, the base portion having at least one through hole penetrating the base portion in an axial direction of the central axis, and a coolant flow path provided inside the base portion and extending along the support surface, the coolant flow path having a first flow path portion and a second flow path portion coupled to both ends of the first flow path portion, the first flow path portion being formed on an outer side of the through hole in a hole diameter direction with a gap therebetween, the second flow path portions being located on both sides of the first flow path portion in an extension direction of the coolant flow path, and a flow
  • the electrostatic chuck device according to any one of [1] to [3], wherein the first flow path portion has a first inner side surface and a second inner side surface facing each other, the first inner side surface being formed on the outer side of the through hole in the hole diameter direction at a distance from the through hole and facing outward in the hole diameter direction, the second inner side surface being formed on the outer side of the first inner side surface in the hole diameter direction at a distance from the first inner side surface and facing inward in the hole diameter direction, and the first inner side surface is formed in an arc shape concentric with an inner peripheral surface of the through hole.
  • the second inner surface is formed into an arc shape concentric with an inner circumferential surface of the through hole.
  • the present invention provides an electrostatic chuck device with high thermal uniformity.
  • FIG. 1 is a schematic cross-sectional view illustrating an example of an electrostatic chuck device according to an embodiment.
  • FIG. 2 is a schematic plan view illustrating an example of a refrigerant flow path according to the embodiment.
  • 5A to 5C are schematic diagrams illustrating examples of a first flow path portion and a second flow path portion formed around a through hole in a refrigerant flow path of the embodiment.
  • 4 is a schematic cross-sectional view illustrating an example of a first flow path portion and a second flow path portion formed around a through hole in a refrigerant flow path of the embodiment.
  • FIG. 1A to 1C are diagrams illustrating events that occur around a through hole during processing in a coolant flow path of an embodiment.
  • FIG. 11 is a schematic plan view showing a refrigerant flow path in a modified example of the embodiment.
  • the present embodiment is specifically described to allow a better understanding of the gist of the invention, and does not limit the present invention unless otherwise specified.
  • conditions such as materials, amounts, types, numbers, sizes, shapes, ratios, and temperatures may be changed, added, or omitted as necessary. Preferred examples may be exchanged or shared between the embodiments described below.
  • the "degree of in-plane temperature distribution (temperature difference) of the electrostatic chuck part (or mounting surface)" may be referred to as "thermal uniformity.”
  • “High thermal uniformity” means that the in-plane temperature distribution of the region of the mounting surface of the electrostatic chuck part where a plate-shaped sample is mounted is small.
  • FIG. 1 is a cross-sectional view showing a preferred example of an electrostatic chuck device 1 according to an embodiment.
  • the electrostatic chuck device 1 has a plate-shaped electrostatic chuck portion 2, a heater element 5, and a disk-shaped base portion 3.
  • the electrostatic chuck device 1 is disk-shaped and centered on a central axis J.
  • the electrostatic chuck portion 2, the heater element 5, and the base portion 3 are layered in this order along the axial direction of the central axis J.
  • the direction of each part of the electrostatic chuck device 1 will be described with respect to the central axis J.
  • the axial direction of the central axis J may be simply referred to as the "axial direction”
  • the radial direction centered on the central axis J may be simply referred to as the "radial direction”
  • the circumferential direction centered on the central axis J may be simply referred to as the "circumferential direction”.
  • the up-down direction of each part is defined in a position where the direction in which the central axis J extends coincides with the up-down direction.
  • the position of the electrostatic chuck device 1 during use is not limited.
  • the electrostatic chuck unit 2 has a mounting plate 11 having an upper surface serving as a mounting surface 11a on which a circular plate-like sample W such as a semiconductor wafer is placed, a support plate 12 which is integrated with the mounting plate 11 and supports the bottom side of the mounting plate 11, an electrostatic attraction electrode 13 provided between the mounting plate 11 and the support plate 12, and an insulating layer 14 which insulates the periphery of the electrostatic attraction electrode 13. That is, the electrostatic chuck unit 2 has the mounting surface 11a on which the plate-like sample W is placed, and the electrostatic attraction electrode 13 is provided inside.
  • a peripheral wall 17 is formed on the periphery of the mounting surface 11a.
  • the peripheral wall 17 is formed at the same height as the protrusion 11b, and supports the plate-shaped sample W together with the protrusion 11b.
  • the electrostatic adsorption electrode 13 is used as an electrode for an electrostatic chuck to generate an electric charge and fix the plate-shaped sample W by electrostatic adsorption force.
  • the shape and size of the electrostatic adsorption electrode 13 are appropriately adjusted depending on the application.
  • the electrostatic attraction electrode 13 can be made of any material.
  • the electrode 13 is made of conductive ceramics such as aluminum oxide-tantalum carbide (Al 2 O 3 -Ta 4 C 5 ) conductive composite sintered body, aluminum oxide-tungsten (Al 2 O 3 -W) conductive composite sintered body, aluminum oxide-silicon carbide (Al 2 O 3 -SiC) conductive composite sintered body, aluminum nitride-tungsten (AlN-W) conductive composite sintered body, aluminum nitride-tantalum (AlN-Ta) conductive composite sintered body, or yttrium oxide-molybdenum (Y 2 O 3 -Mo) conductive composite sintered body, or a high melting point metal such as tungsten (W), tantalum (Ta), or molybdenum (Mo).
  • conductive ceramics such as aluminum oxide-tantalum carbide (Al 2 O 3 -Ta 4 C 5 ) conductive composite sintered body, aluminum
  • the insulating layer 14 surrounds the electrostatic attraction electrode 13 to protect it from corrosive gases and their plasma.
  • the insulating layer 14 also bonds and integrates the boundary between the mounting plate 11 and the support plate 12, i.e., the peripheral area other than the electrostatic attraction electrode 13.
  • the insulating layer 14 is made of an insulating material that has the same composition or the same main component as the material that constitutes the mounting plate 11 and the support plate 12.
  • the heater element 5 heats the electrostatic chuck part 2.
  • the heater element 5 is disposed on the lower surface side of the electrostatic chuck part 2.
  • the structure and material of the heater element 5 can be selected arbitrarily.
  • the heater element 5 is obtained by processing a non-magnetic metal thin plate having a constant thickness of 0.2 mm or less, preferably about 0.1 mm, into a desired heater shape, such as a meandering shape of a strip-shaped conductive thin plate, with an overall contour of a circular ring shape.
  • a non-magnetic metal thin plate for example, a titanium (Ti) thin plate, a tungsten (W) thin plate, a molybdenum (Mo) thin plate, etc. can be used.
  • a photolithography method or laser processing is used.
  • the heater element 5 may be provided by adhering a non-magnetic metal sheet to the electrostatic chuck portion 2 and then processing and molding it on the surface of the electrostatic chuck portion 2.
  • the heater element 5 may also be separately processed and molded in a position different from the electrostatic chuck portion 2, and then transferred and printed on the surface of the electrostatic chuck portion 2.
  • the heater element 5 is adhered and fixed to the bottom surface of the support plate 12 by adhesive 4, which is a sheet or film of silicone resin or acrylic resin that has uniform thickness, heat resistance, and insulating properties.
  • the electrostatic chuck portion 2 and the base portion 3 are bonded via an adhesive layer 8 provided between the electrostatic chuck portion 2 and the base portion 3.
  • the adhesive layer 8 is formed, for example, from a hardened body obtained by heating and hardening a silicone-based resin composition or from an acrylic resin.
  • the adhesive layer 8 is preferably formed, for example, by placing a resin composition having fluidity between the electrostatic chuck portion 2 and the base portion 3 and then heating and hardening it. As a result, the unevenness between the electrostatic chuck portion 2 and the base portion 3 is filled with the adhesive layer 8, making it difficult for gaps or defects to occur in the adhesive layer 8. Therefore, the thermal conductivity characteristics of the adhesive layer 8 can be made uniform within the surface, and the thermal uniformity of the electrostatic chuck portion 2 can be improved.
  • the base portion 3 cools the electrostatic chuck portion 2.
  • the base portion 3 is disk-shaped and centered on a central axis J.
  • the base portion 3 has a support surface 3a that supports the electrostatic chuck portion 2, and a bottom surface 3b facing the opposite side to the support surface 3a.
  • the electrostatic chuck portion 2 supports the electrostatic chuck portion 2 on the support surface 3a from the opposite side to the mounting surface 11a.
  • the material constituting the base portion 3 is not particularly limited as long as it is a metal with excellent thermal conductivity, electrical conductivity, and workability, or a composite material containing such a metal, and for example, aluminum (Al), aluminum alloy, copper (Cu), titanium (Ti), copper alloy, stainless steel (SUS), etc. are preferably used. At least the surface of the base portion 3 exposed to the plasma is preferably anodized or has an insulating film such as alumina formed thereon.
  • a refrigerant flow path 40 through which the refrigerant flows is provided inside the base portion 3.
  • the refrigerant flow path 40 is provided with an inlet 40a that draws the refrigerant into the refrigerant flow path 40 from outside the base portion 3, and an outlet 40b that discharges the refrigerant in the refrigerant flow path 40 to outside the base portion 3.
  • the inlet 40a and the outlet 40b open to the bottom surface 3b of the base portion 3. Note that in FIG. 1, the radial positions of the inlet 40a and the outlet 40b are illustrated in a schematic manner and do not represent their actual positions.
  • the upper surface of the lower member 36 is provided with grooves 31g that open upward.
  • the portions between the grooves 31g form wall portions 50. That is, the base portion 3 has wall portions 50.
  • the wall portions 50 separate the grooves 31g.
  • the lower member 36 also has an outer periphery (outer edge portion) that surrounds the wall portions 50 and the groove portions 31g and is connected to a portion of the wall portions 50.
  • the outer periphery has a constant thickness, and it is preferable that at least a portion of it is annular or approximately annular in plan view.
  • the opening of groove 31g is covered by upper member 35.
  • the refrigerant flows within the area surrounded by the inner surface of groove 31g in lower member 36 and upper member 35. That is, refrigerant flow path 40 is formed in the area surrounded by the inner surfaces (bottom surface and two opposing side surfaces) of groove 31g and the lower surface of upper member 35.
  • Wall portion 50 also divides refrigerant flow path 40 in the radial direction.
  • the lower surface of upper member 35 and the upper surface of lower member 36 are joined to each other by any selected means, for example, a joining means such as brazing.
  • FIG. 2 is a schematic diagram of the coolant flow path 40 of the present embodiment as viewed from above.
  • the refrigerant flow path 40 of this embodiment has a spiral shape in a plan view, more specifically, a spiral shape that spreads radially outward from the central axis J.
  • the refrigerant flow path 40 of this embodiment is continuous over its entire length.
  • the refrigerant flow path 40 is continuously spaced away from the central axis J while the radius of curvature increases along the circumferential direction.
  • a wall portion 50 is located between flow path portions of the refrigerant flow path 40 that overlap in the radial direction.
  • the wall portion 50 defines the refrigerant flow path 40 in a spiral shape centered on the central axis J.
  • the refrigerant flow path 40 has an outer peripheral flow path section 41 and an inner peripheral flow path section 42.
  • the outer peripheral flow path section 41 is located in the outermost region of the entire length of the refrigerant flow path 40, and is a region that extends circumferentially for one revolution or less around the central axis J.
  • the inner peripheral flow path section 42 is located radially inward of the outer peripheral flow path section 41 of the entire length of the refrigerant flow path 40.
  • the outer peripheral flow path section 41 and the inner peripheral flow path section 42 are connected to each other.
  • the inlet 40a is provided in the outer peripheral flow path section 41
  • the outlet 40b is provided in the inner peripheral flow path section 42.
  • the inlet 40a and the outlet 40b are provided at or near the end of the refrigerant flow path 40, respectively. Therefore, the refrigerant in this embodiment flows through the refrigerant flow path 40 in the order of the outer peripheral flow path section 41 and the inner peripheral flow path section 42.
  • the outer peripheral flow passage section 41 is disposed at the outermost periphery of the refrigerant flow passage 40.
  • the outer peripheral flow passage section 41 extends in an arc shape for approximately 3/4 of the circumference around the central axis J.
  • An inlet 40a is provided at one end of the outer peripheral flow passage section 41.
  • the other end of the outer peripheral flow passage section 41 is connected to the inner peripheral flow passage section 42.
  • the outer peripheral flow passage portion 41 has a uniform width dimension over its entire length.
  • the flow passage cross section is rectangular over its entire length, and the axial dimension (depth) is uniform. Therefore, the outer peripheral flow passage portion 41 has a uniform flow passage cross-sectional area over its entire length.
  • the flow passage cross section may be considered as a cross section in a direction intersecting the axial direction and the extension direction of the flow passage.
  • the inner circumferential flow passage portion 42 is a spiral shape that extends approximately one and a half revolutions around the central axis J. One end of the inner circumferential flow passage portion 42 is connected to the outer circumferential flow passage portion 41. The other end of the inner circumferential flow passage portion 42 is provided with an outlet 40b.
  • the width dimension of the inner circumferential flow passage portion 42 is continuously reduced as it moves radially outward. Therefore, the flow passage cross-sectional area of the inner circumferential flow passage portion 42 is continuously reduced as it moves radially outward.
  • the wall portion 50 is spiral-shaped and extends around the central axis J by approximately one and three-quarters of a revolution. In this embodiment, the wall portion 50 moves continuously away from the central axis J while increasing its radius of curvature in the circumferential direction.
  • the wall portion 50 In the inner region 50A of the wall portion 50, the wall portion 50 is positioned between and defines the inner circumferential flow passage portions 42.
  • the wall portion 50 In the outer region 50B of the wall portion 50, the wall portion 50 is positioned between and defines the outer circumferential flow passage portion 41 and the inner circumferential flow passage portion 42.
  • the radial dimension of the wall portion 50 becomes continuously smaller as it moves away from the central axis J. Therefore, in the refrigerant flow path 40, the radial distance between the flow path portions that are arranged to overlap in the radial direction becomes continuously smaller as it moves away from the central axis J.
  • the through hole 80 may be disposed at the center of the radial dimension of the wall portion 50. The radial dimension of the wall portion 50 may once widen around the through hole 80.
  • the electrostatic chuck device 1 has a through hole 80 that penetrates the electrostatic chuck portion 2 and the base portion 3 in the axial direction.
  • the through hole 80 is formed, for example, as a lift pin insertion hole.
  • the number of the through holes 80 can be selected arbitrarily, and a plurality of the through holes 80 may be provided.
  • the number of the through holes 80 may be 1 to 50, 2 to 30, 3 to 10, or 4 to 6.
  • the through holes 80 are formed at a plurality of locations, for example, three locations spaced apart in the circumferential direction centered on the central axis J.
  • the number and arrangement of the through holes 80 are not limited in any way.
  • Each through hole 80 penetrates the base portion 3 in the axial direction. That is, the base portion 3 has a through hole 80 and a refrigerant flow path 40.
  • the through hole 80 penetrates a part of the wall portion 50 of the base portion 3 in the axial direction. It is preferable that the through hole 80 and the refrigerant flow path 40 are not connected to each other.
  • the through hole 80 is formed between the refrigerant flow paths 40 adjacent to each other in the radial direction. That is, each through hole 80 is provided in the wall portion 50 of the base portion 3.
  • the through hole 80 may be located between the inner circumferential flow path portions 42 in the inner peripheral region 50A, and/or may be located between the outer peripheral flow path portion 41 and the inner circumferential flow path portion 42 in the outer peripheral region 50B.
  • the radial direction of the through hole 80 with the through hole 80 at the center may be referred to as the hole radial direction.
  • the outer surface of the first portion is the inner surface of the first flow path portion
  • the outer surface of the second portion is the inner surface of the second flow path portion.
  • the width of the refrigerant flow path 40 is narrowed around the through hole 80, so that the cross-sectional area of the flow path is narrowed.
  • the refrigerant flow path 40 has a first flow path portion 40N and a second flow path portion 40W connected to both sides thereof.
  • the length of the second flow path portion 40W in the extension direction can be selected arbitrarily, but may be, for example, about 1 to 5 times or 2 to 4 times the length of the first flow path portion 40N.
  • the first flow path portion 40N is in contact with the wall portion 50 at the location where the through hole 80 is provided.
  • FIG. 4 is a cross-sectional view showing a first flow path portion formed around a through hole and a second flow path portion coupled to the first flow path portion in a refrigerant flow path of the embodiment.
  • the width dimension Wn of the first flow path portion 40N is smaller than the width dimension Ww of the second flow path portion 40W.
  • the height (depth) of the first flow path portion 40N is the same as the height (depth) of the second flow path portion 40W. Therefore, the flow path cross-sectional area of the first flow path portion 40N is smaller than the flow path cross-sectional area of the second flow path portion 40W.
  • the flow path cross-sectional area of the first flow path section 40N is preferably 0.5 times or more and less than 1.0 times the flow path cross-sectional area of the second flow path section 40W. If the flow path cross-sectional area of the first flow path section 40N is less than 0.5 times the flow path cross-sectional area of the second flow path section 40W, the pressure loss in the first flow path section 40N is likely to be excessively high. On the other hand, if the flow path cross-sectional area of the first flow path section 40N is 1 time or more the flow path cross-sectional area of the second flow path section 40W, the flow rate of the refrigerant in the first flow path section 40N becomes smaller than that in the second flow path section 40W.
  • the flow path cross-sectional area of the first flow path section 40N is more preferably 0.6 times or more and less than 0.97 times the flow path cross-sectional area of the second flow path section 40W, and even more preferably 0.7 times or more and less than 0.95 times. It may be 0.75 times or more and less than 0.90 times, or 0.80 times or more and less than 0.85 times.
  • the first flow path portion 40N has a first inner side surface 40s and a second inner side surface 40t facing each other.
  • the first inner side surface 40s is formed with a gap therebetween on the outer side in the hole diameter direction of the through hole 80, with the through hole 80 as the center.
  • the first inner side surface 40s faces the outer side in the hole diameter direction, that is, in a direction away from the through hole 80.
  • the first inner side surface 40s is formed in an arc shape that is concentric with the hole inner circumferential surface 80f of the through hole 80.
  • the first inner side surface 40s protrudes outward in the hole diameter direction relative to the inner side surfaces 40g of the second flow path portions 40W located on both sides of the first flow path portion 40N in the extension direction of the refrigerant flow path 40.
  • the thickness T of the wall portion 50 formed between the first inner surface 40s and the inner peripheral surface 80f of the through hole 80 is selected arbitrarily, but is preferably 1 mm or more and 10 mm or less. It may be 1 mm or more and 3 mm or less, 3 mm or more and 6 mm or less, or 6 mm or more and 10 mm or less. If the thickness T is less than 1 mm, the mechanical strength of the wall portion 50 may be insufficient. Furthermore, if the thickness T exceeds 10 mm, the wall portion 50 becomes too thick, which may lead to a decrease in the cooling effect of the refrigerant flowing through the refrigerant flow path 40.
  • the second inner surface 40t is formed with a gap between it and the first inner surface 40s on the outer side in the hole diameter direction.
  • the second inner surface 40t faces inward in the hole diameter direction, that is, the opposite direction to the direction away from the through hole 80.
  • the second inner surface 40t is formed in an arc shape that is concentric with the hole inner surface 80f of the through hole 80.
  • the first inner surface 40s and the second inner surface 40t are each formed concentric with the hole inner surface 80f of the through hole 80, as shown in FIG. 3.
  • first inner surface 40s and the second inner surface 40t are formed concentrically with the inner surface 80f of the through hole 80, but the present invention is not limited to these examples.
  • only one of the inner surfaces may be formed concentrically.
  • These may be curved surfaces that are not concentric.
  • the first inner surface 40s and the second inner surface 40t may be curved with an appropriate curvature, rather than being concentric with the inner surface 80f of the through hole 80.
  • the first inner surface 40s may be made to protrude outward in the hole diameter direction relative to the inner surface 40g of the second flow path section 40W, and the second inner surface 40t may be formed to be smoothly continuous with the inner surface 40h of the second flow path section 40W without protruding.
  • the angle ⁇ formed by the concentrically formed portion and the center of the through hole 80 can be selected arbitrarily, but is preferably formed in the range of 20 to 300°. It may be in the range of 20 to 45°, 45 to 90°, 90 to 180°, or 180 to 300°. When the angle ⁇ is less than 20°, the first inner side surface 40s will not contribute much to reducing the flow path cross-sectional area of the first flow path portion 40N by protruding outward in the hole diameter direction.
  • the wall portion 50 between the hole inner peripheral surface 80f of the through hole 80 and the first inner side surface 40s will have a shape close to a cylinder that continues in the circumferential direction around the through hole 80. This increases the axial rigidity of the wall portion 50 around the through hole 80. Then, as shown by the two-dot chain line L1 in FIG. 5, when cutting the flat surface such as the support surface 3a of the base portion 3 with a machine tool, the portion P1 of the wall portion 50 around the through hole 80 is bent downwardly by the stress applied by the machine tool smaller than the portion P2 around the portion P1 where the refrigerant flow path 40 is formed under the upper member 35.
  • the portion P2 is cut in a state where it is bent downwardly by the stress from the machine tool, so the amount of cutting of the upper member 35 is small.
  • the portion P1 of the wall portion 50 around the through hole 80 is bent downwardly by the stress from the machine tool smaller, so the amount of cutting is large accordingly.
  • connection surface 40j that is curved in an arc shape when viewed in the axial direction is formed between the inner surface 40g connected to the first inner surface 40s and the first inner surface 40s.
  • a connection surface 40k that is curved in an arc shape when viewed in the axial direction is formed between the inner surface 40h of the second flow path section 40W that is connected to the second inner surface 40t and the second inner surface 40t.
  • the coolant flow passage 40 has a first flow passage portion 40N formed at an interval on the outer side of the hole diameter direction of the through hole 80, and a second flow passage portion 40W located on both sides of the first flow passage portion 40N in the extension direction of the coolant flow passage 40.
  • the flow passage cross-sectional area of the first flow passage portion 40N is smaller than that of the second flow passage portion 40W.
  • the flow rate of the coolant in the coolant flow passage 40 is higher in the first flow passage portion 40N having a smaller flow passage cross-sectional area than in the second flow passage portion 40W having a larger flow passage cross-sectional area.
  • the cooling performance in the first flow passage portion 40N is improved.
  • a lift pin is inserted into the through hole 80 as necessary, or a cooling gas such as He is filled.
  • An insulating part is preferably inserted into the through hole 80 to electrically insulate them from the base member.
  • the heat insulation performance of the through hole 80 is increased, and the cooling performance is reduced.
  • the cooling effect of the coolant around the through hole 80 is reduced, and the temperature is easily increased.
  • by making the flow passage cross-sectional area of the first flow passage portion 40N smaller than the flow passage cross-sectional area of the second flow passage portion 40W it is possible to provide an electrostatic chuck device 1 with high thermal uniformity.
  • the first flow path section 40N of this embodiment has a smaller width dimension in the direction intersecting the axial direction and the extension direction than the second flow path section 40W. In this way, the flow path cross-sectional area of the first flow path section 40N can be easily made smaller than the flow path cross-sectional area of the second flow path section 40W.
  • the flow path cross-sectional area of the first flow path section 40N is preferably 0.5 times or more and less than 1.0 times the flow path cross-sectional area of the second flow path section 40W. This makes it possible to efficiently improve thermal uniformity by reducing the flow path step area of the first flow path section 40N.
  • the first flow passage portion 40N of this embodiment has a first inner surface 40s and a second inner surface 40t, and the first inner surface 40s is preferably formed in an arc shape that is concentric with the hole inner surface 80f of the through hole 80. This makes it possible to make the thickness T of the wall portion 50 between the first inner surface 40s and the hole inner surface 80f constant and improve thermal uniformity.
  • the second inner surface 40t is preferably formed in an arc shape that is concentric with the inner peripheral surface 80f of the through hole 80.
  • the first inner surface 40s and the second inner surface 40t are formed concentrically, and the first flow passage portion 40N can be easily formed by a machine tool.
  • the first inner surface 40s and the second inner surface 40t are preferably formed in a range of 20 to 300° from the center of the through hole 80 when viewed in the axial direction. This makes it possible to reduce the flow path step area of the first flow path section 40N while preventing the rigidity of the wall section 50 around the through hole 80 from becoming excessively high.
  • connection surface 40j is formed between the first inner surface 40s and the inner surface 40g connected to the first inner surface 40s.
  • the connection surface 40j is preferably a curved surface in a plan view. This can prevent separation from occurring at the boundary between the first inner surface 40s and the inner surface 40g during the flow of refrigerant in the refrigerant flow path 40. This prevents areas with low cooling efficiency from occurring around the through hole 80, improving thermal uniformity.
  • the thickness of the wall portion 50 formed between the inner circumferential surface of the through hole 80 and the first inner surface 40s is preferably 1 mm or more and 10 mm or less. This ensures the strength of the wall portion 50 while preventing a decrease in thermal uniformity.
  • the inner circumferential flow passage portion 42 in this embodiment is positioned radially inward from the outer circumferential flow passage portion 41.
  • the base portion 3 actively cools the area of the electrostatic chuck portion 2 that overlaps with the plate-shaped sample W when viewed from the axial direction, thereby keeping the temperature of the plate-shaped sample W constant.
  • by providing the inner circumferential flow passage portion 42 and the outer circumferential flow passage portion 41 and optimizing the configuration of each flow passage it is possible to improve the thermal uniformity of the electrostatic chuck portion 2 up to the vicinity of the outer edge Wa of the plate-shaped sample W.
  • the refrigerant flow passage 40 has the outer circumferential flow passage portion 41 and the inner circumferential flow passage portion 42, but is not limited to this.
  • Fig. 6 is a schematic diagram showing a refrigerant flow path 140 according to a modified example of the embodiment.
  • the refrigerant flow path 140 according to the second embodiment will be described below with reference to Fig. 3. Note that the same components as those in the above-described embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
  • the refrigerant flow path 140 of this embodiment has a double spiral shape that turns back near the central axis J.
  • the double spiral of the refrigerant flow path 140 spreads radially outward with respect to the central axis J.
  • the refrigerant flow path 140 of this embodiment is continuous over its entire length.
  • the refrigerant flow path 140 of this embodiment has a rectangular flow path cross section over its entire length, and its axial dimension is uniform.
  • the wall portion 150 is located between the radially overlapping portions of the refrigerant flow path 140.
  • the wall portion 150 defines the refrigerant flow path 140 in a spiral shape centered on the central axis J.
  • the refrigerant flow path 140 has an outer circumferential flow path portion 141 with a constant width, and an inner circumferential flow path portion 142 that is disposed radially inward of the outer circumferential flow path portion 141.
  • the outer circumferential flow path portion 141 and the inner circumferential flow path portion 142 are connected to each other.
  • the inlet 140a is provided in the inner circumferential flow path portion 142
  • the outlet 140b is provided in the outer circumferential flow path portion 141. Therefore, the refrigerant in this embodiment flows through the refrigerant flow path 40 in the order of the inner circumferential flow path portion 142 and the outer circumferential flow path portion 141.
  • the outer peripheral flow passage portion 141 is disposed at the outermost periphery of the refrigerant flow passage 140.
  • the outer peripheral flow passage portion 141 extends in an arc shape, for example, about 6/10 to 9/10 or about 7/10 to 8/10 of a circumference, or in a specific example, about 3/4 of a circumference, around the central axis J.
  • the inner peripheral flow passage portion 142 is connected to one end of the outer peripheral flow passage portion 141.
  • An outlet 140b is provided at the other end of the outer peripheral flow passage portion 141. It is also preferable that the outer peripheral flow passage portion 141 overlaps with the outer edge Wa of the plate-shaped sample W when viewed from the axial direction.
  • the outer peripheral flow passage portion 141 has a uniform width dimension over its entire length. Therefore, the outer peripheral flow passage portion 141 has a uniform flow passage cross-sectional area over its entire length.
  • the inner circumferential flow passage portion 142 has, from the inside, a first arc portion 142A, a second arc portion 142B, and a third arc portion 142C, each of which has a constant width.
  • the inner circumferential flow passage portion 142 further has a first connecting portion 143A, a second connecting portion 143B, and a third connecting portion 143C, which connect the arc portions together or connect the outer circumferential flow passage portion 141 and the second arc portion 142B.
  • the first arc portion 142A, the second arc portion 142B, and the third arc portion 142C extend in an arc shape centered on the central axis J.
  • the first arc portion 142A, the second arc portion 142B, and the third arc portion 142C are arranged concentrically centered on the central axis J.
  • the first arc portion 142A is located at the innermost circumference of the inner circumferential flow path portion 142.
  • the first arc portion 142A extends in an arc shape for approximately 3/4 of the circumference around the central axis J.
  • the first connecting portion 143A is connected to one end of the first arc portion 142A.
  • the second connecting portion 143B is connected to the other end of the first arc portion 142A.
  • the width dimension of the first arc portion 142A is uniform over its entire length. Therefore, the first arc portion 142A has a uniform flow path cross-sectional area over its entire length.
  • the second arc portion 142B is located radially outside the first arc portion 142A.
  • the second arc portion 142B is located radially between the first arc portion 142A and the third arc portion 142C.
  • the second arc portion 142B extends in an arc shape for approximately 3/4 of a circumference around the central axis J.
  • the first connecting portion 143A is connected to one end of the second arc portion 142B.
  • the third connecting portion 143C is connected to the other end of the second arc portion 142B.
  • the second arc portion 142B has a uniform width dimension over its entire length. Therefore, the second arc portion 142B has a uniform flow passage cross-sectional area over its entire length.
  • the third arc portion 142C is located radially outside the second arc portion 142B.
  • the third arc portion 142C is located radially between the second arc portion 142B and the outer peripheral flow passage portion 141.
  • the third arc portion 142C extends in an arc shape for approximately 3/4 of a circumference around the central axis J.
  • the second connecting portion 143B is connected to one end of the third arc portion 142C.
  • the inlet 140a is provided at the other end of the third arc portion 142C.
  • the width dimension of the third arc portion 142C is uniform over its entire length. Therefore, the third arc portion 142C has a uniform flow passage cross-sectional area over its entire length.
  • the width dimension D2 of the second arc portion 142B is smaller than the width dimension D1 of the first arc portion 142A (D2 ⁇ D1). Furthermore, the width dimension D3 of the third arc portion 142C is smaller than the width dimension D2 of the second arc portion 142B (D3 ⁇ D2). In other words, among the multiple arc portions 142A, 142B, and 142C, the arc portion located radially outward from the other arc portions has a smaller radial dimension (width) than the other arc portions located on the inner side (D3 ⁇ D2 ⁇ D1).
  • the width dimension D4 of the outer circumferential flow passage portion 141 is larger than the width dimension at any position of the inner circumferential flow passage portion 142 (D4>D1, D4>D2, D4>D3).
  • the width dimension D4 of the outer circumferential flow passage portion 141 is larger than the width dimensions D1, D2, and D3 of the inner circumferential flow passage portion 142.
  • the first connecting portion 143A connects one end of the first arc portion 142A to one end of the second arc portion 142B.
  • one end of the first arc portion 142A and one end of the second arc portion 142B are arranged side by side in the radial direction.
  • the first connecting portion 143A connects the first arc portion 142A to the second arc portion 142B in a manner that bends back in a hairpin shape, i.e., in a U-shape.
  • the width dimension of the first connecting portion 143A gradually decreases from the end on the first arc portion 142A side toward the end on the second arc portion 142B side.
  • the first connecting portion 143A is curved and has opposing side surfaces, i.e., an inner corner surface 144 and an outer corner surface 145.
  • the inner corner surface 144 is a semicircular arc surface centered on a center point C1.
  • the outer corner surface 145 is a semicircular arc surface centered on a center point C2.
  • the radius of curvature of the inner corner surface 144 is smaller than the radius of curvature of the outer corner surface 145.
  • the center point C1 of the inner corner surface 144 and the center point C2 of the outer corner surface 145 are located at different positions. In other words, the inner corner surface 144 and the outer corner surface 145 are arc surfaces with different centers.
  • the first connecting portion 143A smoothly connects the first arc portion 142A and the second arc portion 142B, which have different width dimensions.
  • the third connecting portion 143C connects the other end of the second arc portion 142B to one end of the outer circumferential flow passage portion 141.
  • the third connecting portion 143C connects the second arc portion 142B to the outer circumferential flow passage portion 141 so as to bend back in a hairpin shape.
  • the third connecting portion 143C extends along the second connecting portion 143B with a larger radius of curvature than the second connecting portion 143B.
  • the third connecting portion 143C gradually increases in width from the end on the second arc portion 142B side to the end on the outer circumferential flow passage portion 141 side.
  • the third connecting portion 143C has inner corner surfaces and outer corner surfaces that have the same relationship as the first connecting portion 143A, thereby smoothly connecting the second arc portion 142B to the outer circumferential flow passage portion 141.
  • the wall portion 150 has, from the inside, a first arc-shaped wall 150A, a second arc-shaped wall 150B, and a third arc-shaped wall 150C, each of which has a certain width.
  • the first arc-shaped wall 150A, the second arc-shaped wall 150B, and the third arc-shaped wall 150C extend in an arc shape centered on a central axis J.
  • the first arc-shaped wall 150A, the second arc-shaped wall 150B, and the third arc-shaped wall 150C are also arranged concentrically with the central axis J as the center.
  • the first arc wall 150A extends in an arc shape for approximately 3/4 of the circumference around the central axis J.
  • the first arc wall 150A is located radially between the first arc portion 142A and the second arc portion 142B and defines them.
  • the first arc wall 150A has a uniform radial dimension over its entire length.
  • the second arc wall 150B extends in an arc shape for approximately 3/4 of the circumference around the central axis J.
  • the second arc wall 150B is located radially between the second arc portion 142B and the third arc portion 142C and defines them.
  • the second arc wall 150B has a uniform radial dimension over its entire length.
  • the third arc wall 150C extends in an arc shape for approximately 3/4 of the circumference around the central axis J.
  • the third arc wall 150C is located radially between the third arc portion 142C and the outer peripheral flow passage portion 141, and defines them.
  • the third arc wall 150C has a uniform radial dimension over its entire length.
  • the radial dimension E2 of the second arc wall 150B is smaller than the radial dimension E1 of the first arc wall 150A (E2 ⁇ E1).
  • the radial dimension E3 of the third arc wall 150C is smaller than the radial dimension E2 of the second arc wall 150B (E3 ⁇ E2). That is, among the multiple arc walls 150A, 150B, and 150C, the arc wall located radially outward from the other arc walls has a smaller radial dimension than the other arc walls (E3 ⁇ E2 ⁇ E1).
  • the wall portion 150 preferably also has a circular wall portion located at the center surrounded by the first arc portion 142A, a substantially semicircular wall portion surrounded by the first connecting portion 143A, a wall portion located between the first connecting portion 143A and the second connecting portion 143B, and a wall portion located between the second connecting portion 143B and the third connecting portion 143C.
  • a first flow path portion 140N having the above-mentioned relationship and a second flow path portion 140W connected to the first flow path portion 140N may be provided near the through hole 80, as in the above embodiment.
  • the flow path cross-sectional area is narrowed around the through hole 80. Therefore, the flow velocity of the coolant in the coolant flow path 140 is higher in the first flow path portion 140N, which has a smaller flow path cross-sectional area, compared to the second flow path portion 140W, which has a larger flow path cross-sectional area, and the cooling performance in the first flow path portion 140N is improved.
  • an electrostatic chuck device 1 with high thermal uniformity can be provided.
  • the flow path cross-sectional area of the inner circumferential flow path portion 142 decreases with increasing distance from the central axis J, so that the flow rate increases with increasing distance from the central axis J, improving the cooling capacity in the area away from the central axis J and improving the thermal uniformity of the mounting surface 11a of the electrostatic chuck portion 2.
  • the flow path cross-sectional area of the outer circumferential flow path portion 141 is larger than the flow path cross-sectional area of the inner circumferential flow path portion 142. This allows the electrostatic chuck portion 2 to be sufficiently cooled.
  • the flow path cross-sectional area of the inner circumferential flow path portion 42, 142 is made smaller with increasing distance from the central axis J, and the flow path cross-sectional area of the outer circumferential flow path portion 41, 141 is made larger than the flow path cross-sectional area of the inner circumferential flow path portion 42, 142, but this is not limited to the above.
  • the configuration as shown above may be applied around the through hole 80.
  • the cross-sectional shape of the coolant flow passage is not limited to the above embodiment.
  • the cross-sectional area of the coolant flow passage may be changed by varying the axial dimension of the coolant flow passage.
  • electrostatic attraction electrode 14 ... insulating material layer 17 ... peripheral wall 31g ... groove 35 ... upper member 36 ... lower member 40, 140 ... refrigerant flow path 40a, 140a ... inlet 40b, 140b of flow path ... outlet 40g of flow path, 40h... Inner surface of second flow path portion 40j, 40k... Connection surface between first flow path portion and second flow path portion 40N, 140N... First flow path portion 40W, 140W...

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Abstract

An electrostatic chuck device, comprising: a plate-form electrostatic chuck part that has a placement surface on which a plate-form sample is placed, and that has an electrostatic attraction electrode provided to the interior thereof; and a base part that is formed in a disc shape centered on a center axis line and that, on a support surface thereof, supports the electrostatic chuck part from the side opposite from the placement surface. Inside the base part, a refrigerant flow path is provided extending along the support surface. The refrigerant flow path has a first flow path part that is centered on at least one through-hole penetrating the base part in the axial direction of the center axis line and that is formed at an interval from the hole on the radially outer side of the hole, and second flow path parts that are respectively positioned at the two sides of the first flow path part in the extension direction of the refrigerant flow path. The flow path cross-sectional area of the first flow path part is less than the flow path cross-sectional area of the second flow path part.

Description

静電チャック装置Electrostatic Chuck Device

 本発明は、静電チャック装置に関するものである。
 本願は、2023年4月14日に、日本に出願された特願2023-066281号に基づき優先権を主張し、その内容をここに援用する。
The present invention relates to an electrostatic chuck device.
This application claims priority based on Japanese Patent Application No. 2023-066281, filed on April 14, 2023, the contents of which are incorporated herein by reference.

 プラズマエッチング装置、プラズマCVD装置等のプラズマを用いた半導体製造装置においては、載置面に簡単にウエハを取付け、固定するとともに、ウエハを所望の温度に維持する装置として静電チャック装置が使用されている。特許文献1には、載置面を含む板状セラミック体と、内部に冷却媒体を流す冷却通路が設けられたベース部材とを有する構成が開示されている。 In semiconductor manufacturing equipment that uses plasma, such as plasma etching equipment and plasma CVD equipment, an electrostatic chuck device is used to easily attach and secure a wafer to a mounting surface and to maintain the wafer at a desired temperature. Patent Document 1 discloses a configuration that includes a plate-shaped ceramic body that includes a mounting surface, and a base member that has a cooling passage inside for flowing a cooling medium.

特開2007-035878号公報JP 2007-035878 A

 近年、半導体を用いたデバイスは高集積化される傾向にある。そのため、デバイスの製造時には、配線の微細加工技術や三次元実装技術が必要とされている。このような加工技術を実施するにあたり、半導体製造装置には、ウエハの面内の温度分布(温度差)を低減させることが求められる。従来技術では、ウエハの面内温度分布を所望の温度差にまで低減させることができないことがあり、改善が求められていた。 In recent years, there has been a trend towards higher integration of semiconductor devices. This has resulted in the need for fine wiring processing technology and three-dimensional packaging technology when manufacturing these devices. When implementing these processing technologies, semiconductor manufacturing equipment is required to reduce the temperature distribution (temperature difference) within the wafer surface. With conventional technology, it has sometimes been impossible to reduce the temperature distribution within the wafer surface to the desired temperature difference, and improvements were required.

 本発明は、上記の事情に鑑みてなされたものであって、均熱性が高い静電チャック装置を提供することを目的とする。 The present invention was made in consideration of the above circumstances, and aims to provide an electrostatic chuck device with high thermal uniformity.

 本発明は、板状試料を載置する載置面を有し内部に静電吸着用電極が設けられる板状の静電チャック部と、中心軸線を中心とする円盤状であり支持面において前記静電チャック部を前記載置面の反対側から支持するベース部と、を備え、前記ベース部は、前記ベース部を前記中心軸線の軸方向に貫通する貫通孔と、前記ベース部の内部に設けられ前記支持面に沿って延びる冷媒流路と、を有し、前記冷媒流路は、前記貫通孔を中心とした孔径方向外側に間隔をあけて形成される第一流路部と、前記第一流路部に対し、前記冷媒流路の延伸方向の両側にそれぞれ位置する第二流路部と、を有し、前記第一流路部の流路断面積は、前記第二流路部の流路断面積よりも小さい、静電チャック装置を提供する。
 すなわち、本発明は、下記[1]~[8]の発明を包含する。
 以下の発明は必要に応じて2つ以上組み合わせることも好ましい。
[1] 板状試料を載置する載置面を有し、内部に静電吸着用電極が設けられた板状の静電チャック部と、中心軸線を中心とする円盤状であり、その支持面において、前記静電チャック部を前記載置面の反対側から支持するベース部と、を備え、前記ベース部は、前記ベース部を、前記中心軸線の軸方向に貫通する、少なくとも一つの貫通孔と、前記ベース部の内部に設けられ前記支持面に沿って延びる冷媒流路と、を有し、前記冷媒流路は、第一流路部と、前記第一流路部の両端にそれぞれ結合する第二流路部とを有し、前記第一流路部は、前記貫通孔を中心として、前記貫通孔の孔径方向外側に、前記貫通孔から間隔をあけて形成され、前記第二流路部は、前記第一流路部の、前記冷媒流路の延伸方向における両側に、それぞれ位置し、前記第一流路部の流路断面積は、前記第二流路部の流路断面積よりも小さい、静電チャック装置。
[2] 前記第一流路部は、前記第二流路部よりも、前記軸方向および前記延伸方向に交差する方向の幅寸法が小さい、[1]に記載の静電チャック装置。
[3] 前記第一流路部の流路断面積は、前記第二流路部の流路断面積に対し、0.5倍以上1.0倍未満である、[1]または[2]に記載の静電チャック装置。
[4] 前記第一流路部は、互いに向き合う、第一内側面と第二内側面とを有し、前記第一内側面は、前記貫通孔の前記孔径方向外側に、前記貫通孔から間隔をあけて形成され、前記孔径方向外側を向き、前記第二内側面は、前記第一内側面よりも前記孔径方向外側に、前記第一内側面から間隔をあけて形成され、前記孔径方向内側を向き、前記第一内側面は、前記貫通孔の孔内周面と同心状に形成された円弧状に形成される、[1]から[3]の何れか一項に記載の静電チャック装置。
[5] 前記第二内側面は、前記貫通孔の孔内周面と同心状に形成された円弧状に形成される、[4]の静電チャック装置。
[6] 前記第一内側面、及び前記第二内側面は、前記軸方向から見た際、前記貫通孔を中心として20~300°の範囲に形成される、[5]の静電チャック装置。
[7] 前記第一流路部に対して前記冷媒流路の前記延伸方向の少なくとも一方側に位置する前記第二流路部において、前記第一内側面に接続される前記第二流路部の内側面と、前記第一内側面との間に、前記軸方向から見た際に円弧状に湾曲した接続面が形成される、[4]から[6]の何れか一項に記載の静電チャック装置。
[8] 前記貫通孔の内周面と前記第一内側面との間に形成される壁部の厚さが、1mm以上10mm以下である、[4]から[7]の何れか一項に記載の静電チャック装置。
[9] 前記冷媒流路は、平面視で連続する渦巻状であり、前記ベース部は、前記冷媒流路を区画する壁部をさらに有し、前記貫通孔は平面視で円形であり、前記壁部の少なくとも一部を前記軸方向に貫通し、前記壁部は、前記貫通孔が設けられた第一部分と、前記部分の両側に位置する貫通孔が設けられていない第二部分を有し、前記第一部分の幅は、平面視で、前記第二部分の幅よりも大きく、前記第一部分の前記幅は徐々に変化し、前記第一部分の側面は前記第一流路の内側面を形成し、前記第二部分の側面は前記第二流路の内側面を形成する、[1]から[8]の何れか一項に記載の静電チャック装置。
The present invention provides an electrostatic chuck device comprising: a plate-shaped electrostatic chuck portion having a mounting surface on which a plate-shaped sample is placed and an electrode for electrostatic attraction provided therein; and a base portion that is disk-shaped about a central axis and supports the electrostatic chuck portion on a support surface from an opposite side to the mounting surface, wherein the base portion has a through hole penetrating the base portion in an axial direction of the central axis, and a coolant flow path provided inside the base portion and extending along the support surface, the coolant flow path having a first flow path portion formed at an interval outward in a hole diameter direction centered on the through hole, and second flow path portions located on both sides of the first flow path portion in an extension direction of the coolant flow path, and a flow path cross-sectional area of the first flow path portion is smaller than a flow path cross-sectional area of the second flow path portion.
That is, the present invention includes the following inventions [1] to [8].
It is also preferable to combine two or more of the following inventions as necessary.
an electrostatic chuck device comprising: a plate-shaped electrostatic chuck portion having a mounting surface on which a plate-shaped sample is placed and having an electrode for electrostatic attraction provided therein; and a base portion which is disk-shaped about a central axis and supports the electrostatic chuck portion on a support surface opposite to the mounting surface, the base portion having at least one through hole penetrating the base portion in an axial direction of the central axis, and a coolant flow path provided inside the base portion and extending along the support surface, the coolant flow path having a first flow path portion and a second flow path portion coupled to both ends of the first flow path portion, the first flow path portion being formed on an outer side of the through hole in a hole diameter direction with a gap therebetween, the second flow path portions being located on both sides of the first flow path portion in an extension direction of the coolant flow path, and a flow path cross-sectional area of the first flow path portion being smaller than a flow path cross-sectional area of the second flow path portion.
[2] The electrostatic chuck device according to [1], wherein the first flow path portion has a smaller width dimension in a direction intersecting the axial direction and the extension direction than the second flow path portion.
[3] The electrostatic chuck device according to [1] or [2], wherein a flow passage cross-sectional area of the first flow passage portion is 0.5 times or more and less than 1.0 times a flow passage cross-sectional area of the second flow passage portion.
[4] The electrostatic chuck device according to any one of [1] to [3], wherein the first flow path portion has a first inner side surface and a second inner side surface facing each other, the first inner side surface being formed on the outer side of the through hole in the hole diameter direction at a distance from the through hole and facing outward in the hole diameter direction, the second inner side surface being formed on the outer side of the first inner side surface in the hole diameter direction at a distance from the first inner side surface and facing inward in the hole diameter direction, and the first inner side surface is formed in an arc shape concentric with an inner peripheral surface of the through hole.
[5] The electrostatic chuck device according to [4], wherein the second inner surface is formed into an arc shape concentric with an inner circumferential surface of the through hole.
[6] The electrostatic chuck device according to [5], wherein the first inner surface and the second inner surface are formed in a range of 20 to 300° about the through hole when viewed in the axial direction.
[7] The electrostatic chuck device described in any one of [4] to [6], wherein in the second flow path portion located on at least one side of the first flow path portion in the extension direction of the coolant flow path, a connection surface that is curved in an arc shape when viewed in the axial direction is formed between an inner surface of the second flow path portion connected to the first inner surface and the first inner surface.
[8] The electrostatic chuck device according to any one of [4] to [7], wherein a thickness of a wall portion formed between an inner peripheral surface of the through hole and the first inner side surface is 1 mm or more and 10 mm or less.
[9] An electrostatic chuck device according to any one of [1] to [8], wherein the coolant flow path has a continuous spiral shape in a plan view, the base portion further has a wall portion that partitions the coolant flow path, the through hole is circular in a plan view and penetrates at least a portion of the wall portion in the axial direction, the wall portion has a first portion having the through hole and a second portion on both sides of the first portion and not having a through hole, a width of the first portion is greater than a width of the second portion in a plan view, the width of the first portion gradually changes, a side surface of the first portion forms an inner surface of the first flow path, and a side surface of the second portion forms an inner surface of the second flow path.

 本発明によれば、均熱性が高い静電チャック装置を提供することができる。 The present invention provides an electrostatic chuck device with high thermal uniformity.

実施形態の静電チャック装置の例を示す概略断面図である。1 is a schematic cross-sectional view illustrating an example of an electrostatic chuck device according to an embodiment. 実施形態の冷媒流路の例を示す模式平面図である。FIG. 2 is a schematic plan view illustrating an example of a refrigerant flow path according to the embodiment. 実施形態の冷媒流路において、貫通孔の周囲に形成された第一流路部、及び第二流路部の例を示す模式図である。5A to 5C are schematic diagrams illustrating examples of a first flow path portion and a second flow path portion formed around a through hole in a refrigerant flow path of the embodiment. 実施形態の冷媒流路において、貫通孔の周囲に形成された第一流路部、及び第二流路部の例を示す概略断面図である。4 is a schematic cross-sectional view illustrating an example of a first flow path portion and a second flow path portion formed around a through hole in a refrigerant flow path of the embodiment. FIG. 実施形態の冷媒流路において、貫通孔の周囲で加工時に生じる事象を例示する図である。1A to 1C are diagrams illustrating events that occur around a through hole during processing in a coolant flow path of an embodiment. 実施形態の変形例における冷媒流路を示す模式平面図である。FIG. 11 is a schematic plan view showing a refrigerant flow path in a modified example of the embodiment.

 以下、図面を基に、本実施形態に係る静電チャック装置の好ましい例について説明する。なお、以下の全ての図面においては、図面を見やすくするため、各構成要素の寸法や比率などは適宜異ならせてある。 Below, a preferred example of an electrostatic chuck device according to this embodiment will be described with reference to the drawings. Note that in all of the following drawings, the dimensions and ratios of each component have been appropriately changed to make the drawings easier to understand.

 また、本実施の形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。例えば、特に制限のない限り、材料、量、種類、数、サイズ、形、比率、温度等の条件等を、必要に応じて変更、追加および省略してもよい。以下に述べる実施形態間において、互いの好ましい例を交換したり、共有したりしてもよい。
 なお、本明細書においては、「静電チャック部(又は載置面)の面内温度分布(温度差)の度合い」のことを「均熱性」と称することがある。「均熱性が高い」とは、静電チャック部の載置面のうち板状試料を搭載する領域の面内温度分布が小さいことを意味する。
In addition, the present embodiment is specifically described to allow a better understanding of the gist of the invention, and does not limit the present invention unless otherwise specified. For example, unless otherwise limited, conditions such as materials, amounts, types, numbers, sizes, shapes, ratios, and temperatures may be changed, added, or omitted as necessary. Preferred examples may be exchanged or shared between the embodiments described below.
In this specification, the "degree of in-plane temperature distribution (temperature difference) of the electrostatic chuck part (or mounting surface)" may be referred to as "thermal uniformity.""High thermal uniformity" means that the in-plane temperature distribution of the region of the mounting surface of the electrostatic chuck part where a plate-shaped sample is mounted is small.

 <実施形態>
 図1は、実施形態の静電チャック装置1の好ましい例を示す断面図である。
 静電チャック装置1は、板状の静電チャック部2と、ヒータエレメント5と、円盤状のベース部3と、を有する。静電チャック装置1は、中心軸線Jを中心とする円盤状である。静電チャック部2、ヒータエレメント5、およびベース部3は、中心軸線Jの軸方向に沿ってこの順で積層される。
<Embodiment>
FIG. 1 is a cross-sectional view showing a preferred example of an electrostatic chuck device 1 according to an embodiment.
The electrostatic chuck device 1 has a plate-shaped electrostatic chuck portion 2, a heater element 5, and a disk-shaped base portion 3. The electrostatic chuck device 1 is disk-shaped and centered on a central axis J. The electrostatic chuck portion 2, the heater element 5, and the base portion 3 are layered in this order along the axial direction of the central axis J.

 以下の説明において、中心軸線Jを中心として静電チャック装置1の各部の方向を説明する。以下の説明において、中心軸線Jの軸方向を単に「軸方向」と呼び、中心軸線Jを中心とする径方向を単に「径方向」と呼び、中心軸線Jを中心とする周方向を単に「周方向」と呼ぶ場合がある。また、以下の説明において、中心軸線Jが延びる方向を上下方向と一致させた姿勢で各部の上下方向を規定する。しかしながら、静電チャック装置1の使用時の姿勢は限定されない。 In the following description, the direction of each part of the electrostatic chuck device 1 will be described with respect to the central axis J. In the following description, the axial direction of the central axis J may be simply referred to as the "axial direction", the radial direction centered on the central axis J may be simply referred to as the "radial direction", and the circumferential direction centered on the central axis J may be simply referred to as the "circumferential direction". In addition, in the following description, the up-down direction of each part is defined in a position where the direction in which the central axis J extends coincides with the up-down direction. However, the position of the electrostatic chuck device 1 during use is not limited.

(静電チャック部)
 静電チャック部2は、その上面を半導体ウエハ等の円形の板状試料Wを載置する載置面11aとした載置板11と、載置板11と一体化され、前記載置板11の底部側を支持する支持板12と、これら載置板11と支持板12との間に設けられた静電吸着用電極13、および静電吸着用電極13の周囲を絶縁する絶縁材層14と、を有する。すなわち、静電チャック部2は、板状試料Wを載置する載置面11aを有し、内部に静電吸着用電極13が設けられる。
(Electrostatic chuck part)
The electrostatic chuck unit 2 has a mounting plate 11 having an upper surface serving as a mounting surface 11a on which a circular plate-like sample W such as a semiconductor wafer is placed, a support plate 12 which is integrated with the mounting plate 11 and supports the bottom side of the mounting plate 11, an electrostatic attraction electrode 13 provided between the mounting plate 11 and the support plate 12, and an insulating layer 14 which insulates the periphery of the electrostatic attraction electrode 13. That is, the electrostatic chuck unit 2 has the mounting surface 11a on which the plate-like sample W is placed, and the electrostatic attraction electrode 13 is provided inside.

 載置板11および支持板12は、重ね合わせた面の形状を同じくする円盤状の部材である。載置板11および支持板12は、機械的な強度を有し、かつ腐食性ガスおよびそのプラズマに対する耐久性を有する、セラミックス焼結体からなる。載置板11および支持板12について、詳しくは後述する。 The mounting plate 11 and the support plate 12 are disk-shaped members with the same shape on the overlapping surfaces. The mounting plate 11 and the support plate 12 are made of a ceramic sintered body that has mechanical strength and is durable against corrosive gases and their plasma. The mounting plate 11 and the support plate 12 will be described in detail later.

 載置板11の載置面11aには、直径が板状試料の厚さより小さい突起部11bが複数所定の間隔で形成され、これらの突起部11bが板状試料Wを支える。 The support surface 11a of the support plate 11 has multiple protrusions 11b formed at a predetermined interval and each protrusion has a diameter smaller than the thickness of the plate-shaped sample, and these protrusions 11b support the plate-shaped sample W.

 また、載置面11aの周縁には、周縁壁17が形成されている。周縁壁17は、突起部11bと同じ高さに形成されており、突起部11bとともに板状試料Wを支持する。 Also, a peripheral wall 17 is formed on the periphery of the mounting surface 11a. The peripheral wall 17 is formed at the same height as the protrusion 11b, and supports the plate-shaped sample W together with the protrusion 11b.

 静電吸着用電極13は、電荷を発生させて静電吸着力で板状試料Wを固定するための静電チャック用電極として用いられる。静電吸着用電極13は、その用途によって、その形状や、大きさが適宜調整される。 The electrostatic adsorption electrode 13 is used as an electrode for an electrostatic chuck to generate an electric charge and fix the plate-shaped sample W by electrostatic adsorption force. The shape and size of the electrostatic adsorption electrode 13 are appropriately adjusted depending on the application.

 静電吸着用電極13は任意に選択される材料から構成できる。例えば、酸化アルミニウム-炭化タンタル(Al-Ta)導電性複合焼結体、酸化アルミニウム-タングステン(Al-W)導電性複合焼結体、酸化アルミニウム-炭化ケイ素(Al-SiC)導電性複合焼結体、窒化アルミニウム-タングステン(AlN-W)導電性複合焼結体、窒化アルミニウム-タンタル(AlN-Ta)導電性複合焼結体、酸化イットリウム-モリブデン(Y-Mo)導電性複合焼結体等の導電性セラミックス、あるいは、タングステン(W)、タンタル(Ta)、モリブデン(Mo)等の高融点金属により形成されることが好ましい。 The electrostatic attraction electrode 13 can be made of any material. For example, it is preferable that the electrode 13 is made of conductive ceramics such as aluminum oxide-tantalum carbide (Al 2 O 3 -Ta 4 C 5 ) conductive composite sintered body, aluminum oxide-tungsten (Al 2 O 3 -W) conductive composite sintered body, aluminum oxide-silicon carbide (Al 2 O 3 -SiC) conductive composite sintered body, aluminum nitride-tungsten (AlN-W) conductive composite sintered body, aluminum nitride-tantalum (AlN-Ta) conductive composite sintered body, or yttrium oxide-molybdenum (Y 2 O 3 -Mo) conductive composite sintered body, or a high melting point metal such as tungsten (W), tantalum (Ta), or molybdenum (Mo).

 静電吸着用電極13は、スパッタ法や蒸着法等の成膜法、あるいはスクリーン印刷法等の塗工法により容易に形成することができる。 The electrostatic attraction electrode 13 can be easily formed by a film formation method such as sputtering or vapor deposition, or a coating method such as screen printing.

 絶縁材層14は、静電吸着用電極13を囲繞して腐食性ガスおよびそのプラズマから静電吸着用電極13を保護する。また絶縁材層14は、載置板11と支持板12との境界部を、すなわち静電吸着用電極13以外の外周部領域を、接合一体化する。絶縁材層14は、載置板11および支持板12を構成する材料と同一組成または主成分が同一の絶縁材料により構成されている。 The insulating layer 14 surrounds the electrostatic attraction electrode 13 to protect it from corrosive gases and their plasma. The insulating layer 14 also bonds and integrates the boundary between the mounting plate 11 and the support plate 12, i.e., the peripheral area other than the electrostatic attraction electrode 13. The insulating layer 14 is made of an insulating material that has the same composition or the same main component as the material that constitutes the mounting plate 11 and the support plate 12.

(ヒータエレメント)
 ヒータエレメント5は、静電チャック部2を加熱する。ヒータエレメント5は、静電チャック部2の下面側に配置される。ヒータエレメント5の構造や材料は、任意に選択できる。例を挙げれば、ヒータエレメント5は、厚さが0.2mm以下、好ましくは0.1mm程度の一定の厚さを有する非磁性金属薄板を、所望のヒータ形状、例えば帯状の導電薄板を蛇行させた形状などであって、全体輪郭が円環状の形状など、に加工することで得られる。非磁性金属薄板としては、例えばチタン(Ti)薄板、タングステン(W)薄板、およびモリブデン(Mo)薄板等を用いることができる。ヒータエレメント5を、所定のヒータ形状に形成するには、例えば、フォトリソグラフィー法やレーザー加工が用いられる。
(Heater element)
The heater element 5 heats the electrostatic chuck part 2. The heater element 5 is disposed on the lower surface side of the electrostatic chuck part 2. The structure and material of the heater element 5 can be selected arbitrarily. For example, the heater element 5 is obtained by processing a non-magnetic metal thin plate having a constant thickness of 0.2 mm or less, preferably about 0.1 mm, into a desired heater shape, such as a meandering shape of a strip-shaped conductive thin plate, with an overall contour of a circular ring shape. As the non-magnetic metal thin plate, for example, a titanium (Ti) thin plate, a tungsten (W) thin plate, a molybdenum (Mo) thin plate, etc. can be used. To form the heater element 5 into a predetermined heater shape, for example, a photolithography method or laser processing is used.

 ヒータエレメント5は、静電チャック部2に非磁性金属薄板を接着した後に、静電チャック部2の表面で加工成型することで設けてもよい。静電チャック部2とは異なる位置でヒータエレメント5を別途加工成形したものを、静電チャック部2の表面に転写印刷することで設けてもよい。 The heater element 5 may be provided by adhering a non-magnetic metal sheet to the electrostatic chuck portion 2 and then processing and molding it on the surface of the electrostatic chuck portion 2. The heater element 5 may also be separately processed and molded in a position different from the electrostatic chuck portion 2, and then transferred and printed on the surface of the electrostatic chuck portion 2.

 ヒータエレメント5は、厚さの均一な耐熱性および絶縁性を有する、シート状またはフィルム状のシリコーン樹脂またはアクリル樹脂などからなる接着剤4により、支持板12の底面に接着および固定されている。 The heater element 5 is adhered and fixed to the bottom surface of the support plate 12 by adhesive 4, which is a sheet or film of silicone resin or acrylic resin that has uniform thickness, heat resistance, and insulating properties.

 静電チャック部2とベース部3とは、静電チャック部2とベース部3の間に設けられた接着剤層8を介して接着されている。接着剤層8は、例えば、シリコーン系樹脂組成物を加熱硬化した硬化体またはアクリル樹脂で形成されている。接着剤層8は、例えば、流動性を有する樹脂組成物を静電チャック部2とベース部3の間に配置した後に、加熱硬化させることで形成することが好ましい。これにより、静電チャック部2とベース部3と間の凹凸が、接着剤層8により充填され、接着剤層8に空隙や欠陥が生じ難くなる。そのため、接着剤層8の熱伝導特性を面内に均一にすることができ、静電チャック部2の均熱性を高めることができる。 The electrostatic chuck portion 2 and the base portion 3 are bonded via an adhesive layer 8 provided between the electrostatic chuck portion 2 and the base portion 3. The adhesive layer 8 is formed, for example, from a hardened body obtained by heating and hardening a silicone-based resin composition or from an acrylic resin. The adhesive layer 8 is preferably formed, for example, by placing a resin composition having fluidity between the electrostatic chuck portion 2 and the base portion 3 and then heating and hardening it. As a result, the unevenness between the electrostatic chuck portion 2 and the base portion 3 is filled with the adhesive layer 8, making it difficult for gaps or defects to occur in the adhesive layer 8. Therefore, the thermal conductivity characteristics of the adhesive layer 8 can be made uniform within the surface, and the thermal uniformity of the electrostatic chuck portion 2 can be improved.

(ベース部)
 ベース部3は、静電チャック部2を冷却する。ベース部3は、中心軸線Jを中心とする円盤状である。ベース部3は、静電チャック部2を支持する支持面3aと、支持面3aの反対側を向く底面3bと、を有する。静電チャック部2は、支持面3aにおいて静電チャック部2を載置面11aの反対側から支持する。
(Base part)
The base portion 3 cools the electrostatic chuck portion 2. The base portion 3 is disk-shaped and centered on a central axis J. The base portion 3 has a support surface 3a that supports the electrostatic chuck portion 2, and a bottom surface 3b facing the opposite side to the support surface 3a. The electrostatic chuck portion 2 supports the electrostatic chuck portion 2 on the support surface 3a from the opposite side to the mounting surface 11a.

 ベース部3を構成する材料としては、熱伝導性、導電性、および加工性に優れた金属、またはこれらの金属を含む複合材であれば特に制限はなく、例えば、アルミニウム(Al)、アルミニウム合金、銅(Cu)、チタン(Ti)、銅合金、ステンレス鋼(SUS)等が好適に用いられる。ベース部3の少なくともプラズマに曝される面は、アルマイト処理が施されているか、あるいはアルミナ等の絶縁膜が成膜されていることが好ましい。 The material constituting the base portion 3 is not particularly limited as long as it is a metal with excellent thermal conductivity, electrical conductivity, and workability, or a composite material containing such a metal, and for example, aluminum (Al), aluminum alloy, copper (Cu), titanium (Ti), copper alloy, stainless steel (SUS), etc. are preferably used. At least the surface of the base portion 3 exposed to the plasma is preferably anodized or has an insulating film such as alumina formed thereon.

 ベース部3の内部には、冷媒が流動する冷媒流路40が設けられる。冷媒流路40には、ベース部3の外部から冷媒流路40内に冷媒を引き込む流入口40aと、冷媒流路40内の冷媒をベース部3の外部に排出する流出口40bと、が設けられる。流入口40aおよび流出口40bは、ベース部3の底面3bに開口している。なお、図1において、流入口40aおよび流出口40bの径方向の位置は模式化されて図示されており、実際の配置を表すものではない。 A refrigerant flow path 40 through which the refrigerant flows is provided inside the base portion 3. The refrigerant flow path 40 is provided with an inlet 40a that draws the refrigerant into the refrigerant flow path 40 from outside the base portion 3, and an outlet 40b that discharges the refrigerant in the refrigerant flow path 40 to outside the base portion 3. The inlet 40a and the outlet 40b open to the bottom surface 3b of the base portion 3. Note that in FIG. 1, the radial positions of the inlet 40a and the outlet 40b are illustrated in a schematic manner and do not represent their actual positions.

 冷媒流路40は、支持面3aに沿って延びる。すなわち、冷媒流路40は、中心軸線Jと直交する平面に沿って延びる。冷媒流路40は、全長に亘って流路断面が矩形状である。本実施形態の冷媒流路40は、冷媒流路40の軸方向寸法Dx(深さ)は、冷媒流路40の全長に亘って一様である。冷媒流路40は、上側部材35と下側部材36とを有する。すなわち、冷媒流路40は、上側部材35と下側部材36とから形成されてよい。上側部材35は、軸方向を厚さ方向とする板状の部材である。また、下側部材36は、上側部材35より軸方向の厚さ寸法が大きい板状の部材である。 The refrigerant flow path 40 extends along the support surface 3a. That is, the refrigerant flow path 40 extends along a plane perpendicular to the central axis J. The refrigerant flow path 40 has a rectangular flow path cross section over its entire length. In the refrigerant flow path 40 of this embodiment, the axial dimension Dx (depth) of the refrigerant flow path 40 is uniform over the entire length of the refrigerant flow path 40. The refrigerant flow path 40 has an upper member 35 and a lower member 36. That is, the refrigerant flow path 40 may be formed from the upper member 35 and the lower member 36. The upper member 35 is a plate-shaped member whose thickness direction is in the axial direction. The lower member 36 is a plate-shaped member whose axial thickness dimension is greater than that of the upper member 35.

 下側部材36の上面には、上側に開口する凹溝31gが設けられる。下側部材36において、凹溝31g同士の間の部分は、壁部50を構成する。すなわち、ベース部3は、壁部50を有する。壁部50は、凹溝31g同士を区画する。また下側部材36は、壁部50と溝部31gを囲み、かつ壁部50の一部と結合する、外周部(外縁部)を有する。外周部は一定の厚さを有し、平面視で、少なくとも一部が円環形又は略円環形であることが好ましい。 The upper surface of the lower member 36 is provided with grooves 31g that open upward. In the lower member 36, the portions between the grooves 31g form wall portions 50. That is, the base portion 3 has wall portions 50. The wall portions 50 separate the grooves 31g. The lower member 36 also has an outer periphery (outer edge portion) that surrounds the wall portions 50 and the groove portions 31g and is connected to a portion of the wall portions 50. The outer periphery has a constant thickness, and it is preferable that at least a portion of it is annular or approximately annular in plan view.

 凹溝31gの開口は、上側部材35に覆われる。冷媒は、下側部材36の凹溝31gの内側面および上側部材35で囲まれる領域内に流れる。すなわち、冷媒流路40は、凹溝31gの内側面(底面、及び、互いに向き合う2つの側面)、および上側部材35の下面に囲まれる領域に構成される。また、壁部50は、冷媒流路40を径方向に区画する。上側部材35の下面と下側部材36の上面とは、任意に選択される手段、例えばロウ付けなどの接合手段によって互いに接合される。 The opening of groove 31g is covered by upper member 35. The refrigerant flows within the area surrounded by the inner surface of groove 31g in lower member 36 and upper member 35. That is, refrigerant flow path 40 is formed in the area surrounded by the inner surfaces (bottom surface and two opposing side surfaces) of groove 31g and the lower surface of upper member 35. Wall portion 50 also divides refrigerant flow path 40 in the radial direction. The lower surface of upper member 35 and the upper surface of lower member 36 are joined to each other by any selected means, for example, a joining means such as brazing.

 図2は、本実施形態の冷媒流路40を上から見た模式図である。
 本実施形態の冷媒流路40は、平面視で渦巻状、より具体的には、中心軸線Jに対し径方向外側に広がる渦巻状である。本実施形態の冷媒流路40は、全長に亘って一つながりである。本実施形態において、冷媒流路40は、周方向に沿って曲率半径を大きくしながら中心軸線Jから連続的に離間する。冷媒流路40の径方向に重なる流路部分同士の間には、壁部50が位置する。壁部50は、冷媒流路40を、中心軸線Jを中心として、渦巻状に画定する。
FIG. 2 is a schematic diagram of the coolant flow path 40 of the present embodiment as viewed from above.
The refrigerant flow path 40 of this embodiment has a spiral shape in a plan view, more specifically, a spiral shape that spreads radially outward from the central axis J. The refrigerant flow path 40 of this embodiment is continuous over its entire length. In this embodiment, the refrigerant flow path 40 is continuously spaced away from the central axis J while the radius of curvature increases along the circumferential direction. A wall portion 50 is located between flow path portions of the refrigerant flow path 40 that overlap in the radial direction. The wall portion 50 defines the refrigerant flow path 40 in a spiral shape centered on the central axis J.

 冷媒流路40は、外周流路部41と、内周流路部42とを有する。外周流路部41は、冷媒流路40の全長のうち、最外周の領域に位置しており、中心軸線Jを中心として周方向に1周以下だけ延びる領域である。一方で、内周流路部42は、冷媒流路40の全長のうち、外周流路部41よりも径方向内側に配置される。外周流路部41と内周流路部42とは、互いに連結している。本実施形態において、流入口40aは、外周流路部41に設けられ、流出口40bは、内周流路部42に設けられる。流入口40aと流出口40bは、それぞれ冷媒流路40の末端又は末端近くに設けられている。したがって、本実施形態の冷媒は、外周流路部41、内周流路部42の順で冷媒流路40内を流れる。 The refrigerant flow path 40 has an outer peripheral flow path section 41 and an inner peripheral flow path section 42. The outer peripheral flow path section 41 is located in the outermost region of the entire length of the refrigerant flow path 40, and is a region that extends circumferentially for one revolution or less around the central axis J. On the other hand, the inner peripheral flow path section 42 is located radially inward of the outer peripheral flow path section 41 of the entire length of the refrigerant flow path 40. The outer peripheral flow path section 41 and the inner peripheral flow path section 42 are connected to each other. In this embodiment, the inlet 40a is provided in the outer peripheral flow path section 41, and the outlet 40b is provided in the inner peripheral flow path section 42. The inlet 40a and the outlet 40b are provided at or near the end of the refrigerant flow path 40, respectively. Therefore, the refrigerant in this embodiment flows through the refrigerant flow path 40 in the order of the outer peripheral flow path section 41 and the inner peripheral flow path section 42.

 外周流路部41は、冷媒流路40において最外周に配置される。本例では、外周流路部41は、中心軸線Jに対して約3/4周だけ円弧状に延びている。外周流路部41の一端には、流入口40aが設けられる。また、外周流路部41の他端は、内周流路部42が接続される。 The outer peripheral flow passage section 41 is disposed at the outermost periphery of the refrigerant flow passage 40. In this example, the outer peripheral flow passage section 41 extends in an arc shape for approximately 3/4 of the circumference around the central axis J. An inlet 40a is provided at one end of the outer peripheral flow passage section 41. The other end of the outer peripheral flow passage section 41 is connected to the inner peripheral flow passage section 42.

 外周流路部41は、全長に亘って幅寸法が一様である。本実施形態の冷媒流路40は、全長に亘って流路断面が矩形状であり、軸方向寸法(深さ)が一様である。したがって、外周流路部41は、全長に亘って流路断面積が一様である。なお流路断面は、軸方向および流路の延伸方向に交差する方向の断面と考えてもよい。 The outer peripheral flow passage portion 41 has a uniform width dimension over its entire length. In the refrigerant flow passage 40 of this embodiment, the flow passage cross section is rectangular over its entire length, and the axial dimension (depth) is uniform. Therefore, the outer peripheral flow passage portion 41 has a uniform flow passage cross-sectional area over its entire length. The flow passage cross section may be considered as a cross section in a direction intersecting the axial direction and the extension direction of the flow passage.

 内周流路部42は、中心軸線Jを中心として略一周半だけ旋回して延びる渦巻状である。内周流路部42の一端は、外周流路部41に接続される。また、内周流路部42の他端には、流出口40bが設けられる。 The inner circumferential flow passage portion 42 is a spiral shape that extends approximately one and a half revolutions around the central axis J. One end of the inner circumferential flow passage portion 42 is connected to the outer circumferential flow passage portion 41. The other end of the inner circumferential flow passage portion 42 is provided with an outlet 40b.

 内周流路部42は、径方向外側に向かうに従い幅寸法を連続的に小さくする。このため、内周流路部42は、径方向外側に向かうに従い流路断面積が連続的に小さくなる。 The width dimension of the inner circumferential flow passage portion 42 is continuously reduced as it moves radially outward. Therefore, the flow passage cross-sectional area of the inner circumferential flow passage portion 42 is continuously reduced as it moves radially outward.

 壁部50は、中心軸線Jを中心として1周と約3/4周だけ旋回して延びる渦巻状である。本実施形態において、壁部50は、周方向に沿って曲率半径を大きくしながら中心軸線Jから連続的に離間する。壁部50は、内周側の領域50Aで、内周流路部42同士の間に位置しこれらを画定する。また、壁部50は、外周側の領域50Bで、外周流路部41と内周流路部42との間に位置しこれらを画定する。 The wall portion 50 is spiral-shaped and extends around the central axis J by approximately one and three-quarters of a revolution. In this embodiment, the wall portion 50 moves continuously away from the central axis J while increasing its radius of curvature in the circumferential direction. In the inner region 50A of the wall portion 50, the wall portion 50 is positioned between and defines the inner circumferential flow passage portions 42. In the outer region 50B of the wall portion 50, the wall portion 50 is positioned between and defines the outer circumferential flow passage portion 41 and the inner circumferential flow passage portion 42.

 壁部50の径方向寸法は、中心軸線Jから離れるに従い連続的に小さくなる。したがって、冷媒流路40は、径方向に重なって配置される流路部分同士の径方向の距離が、中心軸線Jから離れるに従い連続的に小さくなる。貫通孔80は、壁部50の径方向寸法の中心に配置されてもよい。壁部50の径方向寸法は、貫通孔80の周りで一旦広がってもよい。 The radial dimension of the wall portion 50 becomes continuously smaller as it moves away from the central axis J. Therefore, in the refrigerant flow path 40, the radial distance between the flow path portions that are arranged to overlap in the radial direction becomes continuously smaller as it moves away from the central axis J. The through hole 80 may be disposed at the center of the radial dimension of the wall portion 50. The radial dimension of the wall portion 50 may once widen around the through hole 80.

 静電チャック装置1は、静電チャック部2、及びベース部3を軸方向に貫通する貫通孔80を有している。貫通孔80は、例えば、リフトピン挿通孔として形成される。貫通孔80の数は任意に選択でき、複数設けられていてもよい。例えば、貫通孔80の数は、1~50個でもよく、2~30個でもよく、3~10個でもよく、4~6個でもよい。本実施形態では、貫通孔80は、複数箇所、例えば中心軸線Jを中心とした周方向に間隔をあけた3箇所に形成される。貫通孔80の数、配置については何ら限定するものではない。リフトピン挿通孔としての貫通孔80には、板状試料Wをリフトアップするためのリフトピン(図示なし)が挿通される。リフトピンは、貫通孔80内から、載置面11aよりも上方に向けて出没することで、板状試料Wを昇降させる。貫通孔80の形状は、例えば平面視で円形である。
 貫通孔80は、例えばガス供給孔等の、他の用途のものであってもよい。貫通孔80は、載置面11aに開口する。ガス供給孔として使用される場合、貫通孔80には、He等の冷却ガスが供給される。ガス供給孔から導入された冷却ガスは、載置面11aと板状試料Wの下面と間の隙間や、複数の突起部11bの間を流れ板状試料Wを冷却する。
The electrostatic chuck device 1 has a through hole 80 that penetrates the electrostatic chuck portion 2 and the base portion 3 in the axial direction. The through hole 80 is formed, for example, as a lift pin insertion hole. The number of the through holes 80 can be selected arbitrarily, and a plurality of the through holes 80 may be provided. For example, the number of the through holes 80 may be 1 to 50, 2 to 30, 3 to 10, or 4 to 6. In this embodiment, the through holes 80 are formed at a plurality of locations, for example, three locations spaced apart in the circumferential direction centered on the central axis J. The number and arrangement of the through holes 80 are not limited in any way. A lift pin (not shown) for lifting up the plate-shaped sample W is inserted into the through hole 80 as a lift pin insertion hole. The lift pin rises and falls the plate-shaped sample W by appearing and disappearing from within the through hole 80 above the mounting surface 11a. The shape of the through hole 80 is, for example, circular in a plan view.
The through-hole 80 may be for other purposes, such as a gas supply hole. The through-hole 80 opens to the mounting surface 11a. When used as a gas supply hole, a cooling gas such as He is supplied to the through-hole 80. The cooling gas introduced from the gas supply hole flows through the gap between the mounting surface 11a and the lower surface of the plate-shaped sample W and between the multiple protrusions 11b to cool the plate-shaped sample W.

 各貫通孔80は、ベース部3を軸方向に貫通する。すなわち、ベース部3は、貫通孔80と冷媒流路40と、を有する。貫通孔80は、ベース部3の壁部50の一部を軸方向に貫通する。貫通孔80と冷媒流路40は互いに結合しないことが好ましい。貫通孔80は、径方向で隣り合う冷媒流路40同士の間に形成される。すなわち、各貫通孔80は、ベース部3の壁部50内に設けられる。貫通孔80は、内周側の領域50Aにおいて内周流路部42同士の間に位置していてもよいし、及び/又は、外周側の領域50Bにおいて外周流路部41と内周流路部42との間に位置していてもよい。
 ここで、以下の説明において、ベース部3を軸方向から見た際、貫通孔80を中心として、貫通孔80の径方向を、孔径方向と称する場合がある。
Each through hole 80 penetrates the base portion 3 in the axial direction. That is, the base portion 3 has a through hole 80 and a refrigerant flow path 40. The through hole 80 penetrates a part of the wall portion 50 of the base portion 3 in the axial direction. It is preferable that the through hole 80 and the refrigerant flow path 40 are not connected to each other. The through hole 80 is formed between the refrigerant flow paths 40 adjacent to each other in the radial direction. That is, each through hole 80 is provided in the wall portion 50 of the base portion 3. The through hole 80 may be located between the inner circumferential flow path portions 42 in the inner peripheral region 50A, and/or may be located between the outer peripheral flow path portion 41 and the inner circumferential flow path portion 42 in the outer peripheral region 50B.
In the following description, when the base portion 3 is viewed in the axial direction, the radial direction of the through hole 80 with the through hole 80 at the center may be referred to as the hole radial direction.

 図3は、実施形態の冷媒流路において、貫通孔の周囲に形成された第一流路部、及び第二流路部を示す模式図である。なお図3においては、壁部50を介して、第一流路部と第二流路部の組み合わせが2つ示されている。壁部50には、貫通孔80が設けられた第一部分と、前記第一部分の両側に位置する、貫通孔が設けられていない第二部分を有する。平面視において、第一部分の幅(貫通孔を含む径方向寸法)は第二部分の幅よりも大きくかつ徐々に変化する。第一部分は凸状の外側壁を有している。なお第一部分の外側面は第一流路部の内側面であり、第二部分の外側面は第二流路部の内側面である。
 図3に示すように、冷媒流路40は、貫通孔80の周囲で、幅が狭くなるため、流路断面積が狭められる。冷媒流路40は、第一流路部40Nと、その両側に結合する第二流路部40Wと、を有する。第二流路部40Wの延伸方向の長さは任意に選択できるが、例えば、第一流路部40Nの長さの1~5倍や2~4倍程度であってもよい。第一流路部40Nは、貫通孔80が設けられた箇所の壁部50に接する。すなわち、第一流路部40Nは、貫通孔80を中心とした、貫通孔80の孔径方向外側に、貫通孔80から間隔をあけて、形成される。第一流路部40Nは、貫通孔80の外側において、すなわち孔径方向外側で、貫通孔80の孔内周面80fに沿うように湾曲する。第二流路部40Wは、第一流路部40Nに対し、冷媒流路40の延伸方向の両側に、それぞれ位置する。第二流路部40Wは、第一流路部40Nと連続している。
FIG. 3 is a schematic diagram showing a first flow path portion and a second flow path portion formed around a through hole in a refrigerant flow path of an embodiment. In FIG. 3, two combinations of the first flow path portion and the second flow path portion are shown through a wall portion 50. The wall portion 50 has a first portion in which a through hole 80 is provided and a second portion located on both sides of the first portion and in which no through hole is provided. In a plan view, the width of the first portion (the radial dimension including the through hole) is larger than the width of the second portion and gradually changes. The first portion has a convex outer wall. The outer surface of the first portion is the inner surface of the first flow path portion, and the outer surface of the second portion is the inner surface of the second flow path portion.
As shown in FIG. 3, the width of the refrigerant flow path 40 is narrowed around the through hole 80, so that the cross-sectional area of the flow path is narrowed. The refrigerant flow path 40 has a first flow path portion 40N and a second flow path portion 40W connected to both sides thereof. The length of the second flow path portion 40W in the extension direction can be selected arbitrarily, but may be, for example, about 1 to 5 times or 2 to 4 times the length of the first flow path portion 40N. The first flow path portion 40N is in contact with the wall portion 50 at the location where the through hole 80 is provided. That is, the first flow path portion 40N is formed on the outer side of the through hole 80 in the hole diameter direction with a space therebetween, with the through hole 80 as the center. The first flow path portion 40N is curved so as to follow the hole inner circumferential surface 80f of the through hole 80 outside the through hole 80, i.e., on the outer side in the hole diameter direction. The second flow path portion 40W is located on both sides of the first flow path portion 40N in the extension direction of the refrigerant flow path 40. The second flow path portion 40W is continuous with the first flow path portion 40N.

 図4は、実施形態の冷媒流路において、貫通孔の周囲に形成された第一流路部、及び第一流路部に結合する第二流路部を示す断面図である。
 図3に示すように、第一流路部40Nの幅寸法Wnは、第二流路部40Wの幅寸法Wwに対して小さい。図4に示すように、第一流路部40Nの高さと、第二流路部40Wの高さ(深さ)は同一である。したがって、第一流路部40Nの流路断面積は、第二流路部40Wの流路断面積よりも小さい。このように、第一流路部40Nの流路断面積が、第二流路部40Wの流路断面積よりも小さいため、冷媒流路40を流れる冷媒の流速は、流路断面積の小さい第一流路部40Nにおいて、第二流路部40Wよりも高まる。これにより、貫通孔80の周囲の壁部50から、熱が効率的に奪い取られる。
FIG. 4 is a cross-sectional view showing a first flow path portion formed around a through hole and a second flow path portion coupled to the first flow path portion in a refrigerant flow path of the embodiment.
As shown in FIG. 3, the width dimension Wn of the first flow path portion 40N is smaller than the width dimension Ww of the second flow path portion 40W. As shown in FIG. 4, the height (depth) of the first flow path portion 40N is the same as the height (depth) of the second flow path portion 40W. Therefore, the flow path cross-sectional area of the first flow path portion 40N is smaller than the flow path cross-sectional area of the second flow path portion 40W. In this way, since the flow path cross-sectional area of the first flow path portion 40N is smaller than the flow path cross-sectional area of the second flow path portion 40W, the flow velocity of the refrigerant flowing through the refrigerant flow path 40 is higher in the first flow path portion 40N having a smaller flow path cross-sectional area than in the second flow path portion 40W. As a result, heat is efficiently removed from the wall portion 50 around the through hole 80.

 ここで、第一流路部40Nの流路断面積は、第二流路部40Wの流路断面積に対し、0.5倍以上1.0倍未満であることが好ましい。第一流路部40Nの流路断面積が、第二流路部40Wの流路断面積の0.5倍未満であると、第一流路部40Nにおける圧力損失が過度に高くなりやすい。一方、第一流路部40Nの流路断面積が、第二流路部40Wの流路断面積に対して1倍以上であると、第一流路部40Nにおける冷媒の流速が、第二流路部40Wよりも小さくなってしまう。第一流路部40Nの流路断面積は、第二流路部40Wの流路断面積に対し、0.6倍以上0.97倍未満であることがより好ましく、0.7倍以上0.95倍未満であるのが、さらに好ましい。0.75倍以上0.90倍未満や、0.80倍以上0.85倍未満であってもよい。 Here, the flow path cross-sectional area of the first flow path section 40N is preferably 0.5 times or more and less than 1.0 times the flow path cross-sectional area of the second flow path section 40W. If the flow path cross-sectional area of the first flow path section 40N is less than 0.5 times the flow path cross-sectional area of the second flow path section 40W, the pressure loss in the first flow path section 40N is likely to be excessively high. On the other hand, if the flow path cross-sectional area of the first flow path section 40N is 1 time or more the flow path cross-sectional area of the second flow path section 40W, the flow rate of the refrigerant in the first flow path section 40N becomes smaller than that in the second flow path section 40W. The flow path cross-sectional area of the first flow path section 40N is more preferably 0.6 times or more and less than 0.97 times the flow path cross-sectional area of the second flow path section 40W, and even more preferably 0.7 times or more and less than 0.95 times. It may be 0.75 times or more and less than 0.90 times, or 0.80 times or more and less than 0.85 times.

 図3に示すように、第一流路部40Nは、互いに向き合う、第一内側面40sと、第二内側面40tと、を有する。
 第一内側面40sは、貫通孔80に対し、貫通孔80を中心として、貫通孔80の孔径方向外側に、間隔をあけて形成される。第一内側面40sは、孔径方向外側を、つまり貫通孔80から離間する方向を向く。第一内側面40sは、貫通孔80の孔内周面80fと同心状に形成された円弧状に形成される。これにより、第一内側面40sは、第一流路部40Nに対して冷媒流路40の延伸方向の両側に位置する第二流路部40Wの内側面40gに対し、孔径方向外側に張り出している。
As shown in FIG. 3, the first flow path portion 40N has a first inner side surface 40s and a second inner side surface 40t facing each other.
The first inner side surface 40s is formed with a gap therebetween on the outer side in the hole diameter direction of the through hole 80, with the through hole 80 as the center. The first inner side surface 40s faces the outer side in the hole diameter direction, that is, in a direction away from the through hole 80. The first inner side surface 40s is formed in an arc shape that is concentric with the hole inner circumferential surface 80f of the through hole 80. As a result, the first inner side surface 40s protrudes outward in the hole diameter direction relative to the inner side surfaces 40g of the second flow path portions 40W located on both sides of the first flow path portion 40N in the extension direction of the refrigerant flow path 40.

 ここで、このような第一内側面40sと貫通孔80の内周面80fとの間に形成される、壁部50の厚さTは、任意に選択されるが、1mm以上10mm以下であるのが好ましい。1mm以上3mm以下や、3mm以上6mm以下や、6mm以上10mm以下であってもよい。厚さTが1mm未満であると、壁部50の機械的な強度が不足する可能性がある。また、厚さTが10mmを超えると、壁部50が厚くなりすぎ、冷媒流路40を流れる冷媒による冷却効果の低下に繋がる可能性がある。 The thickness T of the wall portion 50 formed between the first inner surface 40s and the inner peripheral surface 80f of the through hole 80 is selected arbitrarily, but is preferably 1 mm or more and 10 mm or less. It may be 1 mm or more and 3 mm or less, 3 mm or more and 6 mm or less, or 6 mm or more and 10 mm or less. If the thickness T is less than 1 mm, the mechanical strength of the wall portion 50 may be insufficient. Furthermore, if the thickness T exceeds 10 mm, the wall portion 50 becomes too thick, which may lead to a decrease in the cooling effect of the refrigerant flowing through the refrigerant flow path 40.

 第二内側面40tは、第一内側面40sに対して、孔径方向外側に、間隔をあけて形成される。第二内側面40tは、孔径方向内側を、つまり貫通孔80から離間する方向とは反対側を向く。第二内側面40tは、貫通孔80の孔内周面80fと同心状に形成された円弧状に形成される。つまり、第一内側面40sと第二内側面40tとは、図3に示すように、それぞれ、貫通孔80の孔内周面80fと同心状に形成される。 The second inner surface 40t is formed with a gap between it and the first inner surface 40s on the outer side in the hole diameter direction. The second inner surface 40t faces inward in the hole diameter direction, that is, the opposite direction to the direction away from the through hole 80. The second inner surface 40t is formed in an arc shape that is concentric with the hole inner surface 80f of the through hole 80. In other words, the first inner surface 40s and the second inner surface 40t are each formed concentric with the hole inner surface 80f of the through hole 80, as shown in FIG. 3.

 なおここで、第一内側面40sと第二内側面40tとを、それぞれ、貫通孔80の孔内周面80fと同心状に形成するようにしたが、これら例に限られない。例えば、どちらか一方の内側面のみを同心状に形成してもよい。これらを同心状ではない曲面としてもよい。例えば、第一内側面40sと第二内側面40tとは、それぞれ、貫通孔80の孔内周面80fと同心状ではなく、適宜の曲率で湾曲させてもよい。また、第一流路部40Nの流路断面積を、第二流路部40Wの流路断面積よりも小さくする、という観点から、第一内側面40sのみを第二流路部40Wの内側面40gに対して孔径方向外側に張り出すようにし、第二内側面40tは、張り出しなく、第二流路部40Wの内側面40hと滑らかに連続するように形成してもよい。 Here, the first inner surface 40s and the second inner surface 40t are formed concentrically with the inner surface 80f of the through hole 80, but the present invention is not limited to these examples. For example, only one of the inner surfaces may be formed concentrically. These may be curved surfaces that are not concentric. For example, the first inner surface 40s and the second inner surface 40t may be curved with an appropriate curvature, rather than being concentric with the inner surface 80f of the through hole 80. In addition, from the viewpoint of making the flow path cross-sectional area of the first flow path section 40N smaller than the flow path cross-sectional area of the second flow path section 40W, only the first inner surface 40s may be made to protrude outward in the hole diameter direction relative to the inner surface 40g of the second flow path section 40W, and the second inner surface 40t may be formed to be smoothly continuous with the inner surface 40h of the second flow path section 40W without protruding.

 第一内側面40s、及び第二内側面40tを、軸方向から見た際、同心状に形成された部分と貫通孔80の中心が作る角度θは、任意に選択できるが、20~300°の範囲に形成されることが好ましい。20~45°の範囲や、45~90°の範囲や、90~180°の範囲や、180~300°の範囲などであってもよい。角度θが20°未満であると、特に、第一内側面40sが孔径方向外側に張り出すことによって第一流路部40Nの流路断面積を小さくすることへの、寄与が少なくなる。角度θが300°を超えると、貫通孔80の孔内周面80fと第一内側面40sとの間の壁部50が、貫通孔80回りの周方向に連続して円筒状に近い形状となる。これにより、貫通孔80の周囲における壁部50の軸方向における剛性が高まる。すると、図5中に二点鎖線L1で示すように、ベース部3の支持面3a等の平面を工作機械で切削加工する際、貫通孔80の周囲の壁部50の部分P1は、その周囲にある、上側部材35の下に冷媒流路40が形成されている部分P2に比較して、工作機械から作用する応力によって下方に撓む寸法が小さくなる。部分P2では、工作機械からの応力によって下方に撓んだ状態で切削されるため、上側部材35の切削量が小さい。これに対し、貫通孔80の周囲の壁部50の部分P1では、工作機械からの応力によって下方に撓む寸法が小さく、その分、切削量が大きくなってしまう。その結果、切削加工の完了後、冷媒流路40が形成されている部分P2の撓みが復元すると、支持面3aは、冷媒流路40が形成されている部分P2に対し、貫通孔80の周囲の壁部50の部分P1が低くなってしまうことになる。その結果、板状試料Wを支持面3aに乗せた状態で、貫通孔80の周囲の壁部50の部分P1と板状試料Wとの間に僅かな隙間が生じてしまう可能性がある。
 これに対し、上記の角度θを300°未満とすることで、上記したような事象が生じるのを抑えることができる。
When the first inner side surface 40s and the second inner side surface 40t are viewed from the axial direction, the angle θ formed by the concentrically formed portion and the center of the through hole 80 can be selected arbitrarily, but is preferably formed in the range of 20 to 300°. It may be in the range of 20 to 45°, 45 to 90°, 90 to 180°, or 180 to 300°. When the angle θ is less than 20°, the first inner side surface 40s will not contribute much to reducing the flow path cross-sectional area of the first flow path portion 40N by protruding outward in the hole diameter direction. When the angle θ exceeds 300°, the wall portion 50 between the hole inner peripheral surface 80f of the through hole 80 and the first inner side surface 40s will have a shape close to a cylinder that continues in the circumferential direction around the through hole 80. This increases the axial rigidity of the wall portion 50 around the through hole 80. Then, as shown by the two-dot chain line L1 in FIG. 5, when cutting the flat surface such as the support surface 3a of the base portion 3 with a machine tool, the portion P1 of the wall portion 50 around the through hole 80 is bent downwardly by the stress applied by the machine tool smaller than the portion P2 around the portion P1 where the refrigerant flow path 40 is formed under the upper member 35. The portion P2 is cut in a state where it is bent downwardly by the stress from the machine tool, so the amount of cutting of the upper member 35 is small. In contrast, the portion P1 of the wall portion 50 around the through hole 80 is bent downwardly by the stress from the machine tool smaller, so the amount of cutting is large accordingly. As a result, when the bending of the portion P2 where the refrigerant flow path 40 is formed is restored after the cutting process is completed, the portion P1 of the wall portion 50 around the through hole 80 is lower than the portion P2 where the refrigerant flow path 40 is formed. As a result, when the plate-shaped sample W is placed on the support surface 3a, a small gap may be generated between the portion P1 of the wall portion 50 around the through hole 80 and the plate-shaped sample W.
In contrast, by setting the angle θ to less than 300°, it is possible to prevent the above-mentioned phenomenon from occurring.

 また、図3に示すように、第一流路部40Nに対して冷媒流路40の延伸方向の両側の第二流路部40Wにおいて、第一内側面40sに接続される内側面40gと、第一内側面40sとの間に、軸方向から見た際に円弧状に湾曲した接続面40jが形成される。また、第二内側面40tに接続される、第二流路部40Wの内側面40hと、第二内側面40tとの間にも、軸方向から見た際に円弧状に湾曲した接続面40kが形成される。 Also, as shown in FIG. 3, in the second flow path section 40W on both sides of the first flow path section 40N in the extension direction of the refrigerant flow path 40, a connection surface 40j that is curved in an arc shape when viewed in the axial direction is formed between the inner surface 40g connected to the first inner surface 40s and the first inner surface 40s. Also, a connection surface 40k that is curved in an arc shape when viewed in the axial direction is formed between the inner surface 40h of the second flow path section 40W that is connected to the second inner surface 40t and the second inner surface 40t.

(実施形態の作用効果)
 本実施形態の静電チャック装置1において、冷媒流路40は、貫通孔80の孔径方向外側に間隔をあけて形成される第一流路部40Nと、第一流路部40Nに対し、冷媒流路40の延伸方向の両側にそれぞれ位置する第二流路部40Wと、を有する。第一流路部40Nの流路断面積は、第二流路部40Wの流路断面積よりも小さい。これにより、冷媒流路40における冷媒の流速は、流路断面積が大きい第二流路部40Wに対し、流路断面積が小さい第一流路部40Nで大きくなる。これにより、第一流路部40Nにおける冷却性が高まる。貫通孔80には、必要に応じてリフトピンが挿入されたり、He等の冷却ガスが充填される。貫通孔80には、これらとベース部材とを電気的に絶縁させるため、絶縁部品が好ましく挿入される。しかしながらその結果、貫通孔80における断熱性が高まり、冷却性が低下する。その結果、貫通孔80の周囲における冷媒による冷却効果が低下し、温度が上昇しやすくなってしまう。これに対し、第一流路部40Nの流路断面積を、第二流路部40Wの流路断面積よりも小さくすることで、均熱性が高い静電チャック装置1を提供することができる。
(Effects of the embodiment)
In the electrostatic chuck device 1 of this embodiment, the coolant flow passage 40 has a first flow passage portion 40N formed at an interval on the outer side of the hole diameter direction of the through hole 80, and a second flow passage portion 40W located on both sides of the first flow passage portion 40N in the extension direction of the coolant flow passage 40. The flow passage cross-sectional area of the first flow passage portion 40N is smaller than that of the second flow passage portion 40W. As a result, the flow rate of the coolant in the coolant flow passage 40 is higher in the first flow passage portion 40N having a smaller flow passage cross-sectional area than in the second flow passage portion 40W having a larger flow passage cross-sectional area. As a result, the cooling performance in the first flow passage portion 40N is improved. A lift pin is inserted into the through hole 80 as necessary, or a cooling gas such as He is filled. An insulating part is preferably inserted into the through hole 80 to electrically insulate them from the base member. However, as a result, the heat insulation performance of the through hole 80 is increased, and the cooling performance is reduced. As a result, the cooling effect of the coolant around the through hole 80 is reduced, and the temperature is easily increased. In response to this, by making the flow passage cross-sectional area of the first flow passage portion 40N smaller than the flow passage cross-sectional area of the second flow passage portion 40W, it is possible to provide an electrostatic chuck device 1 with high thermal uniformity.

 本実施形態の第一流路部40Nは、第二流路部40Wに対し、軸方向および延伸方向に交差する方向の、幅寸法が小さい。このように、第一流路部40Nの流路断面積を、第二流路部40Wの流路断面積よりも、容易に小さくすることができる。 The first flow path section 40N of this embodiment has a smaller width dimension in the direction intersecting the axial direction and the extension direction than the second flow path section 40W. In this way, the flow path cross-sectional area of the first flow path section 40N can be easily made smaller than the flow path cross-sectional area of the second flow path section 40W.

 本実施形態の第一流路部40Nの流路断面積は、第二流路部40Wの流路断面積に対し、好ましくは0.5倍以上1.0倍未満である。これにより、第一流路部40Nの流路段面積を小さくすることによって、均熱性を、効率良く高めることができる。 In this embodiment, the flow path cross-sectional area of the first flow path section 40N is preferably 0.5 times or more and less than 1.0 times the flow path cross-sectional area of the second flow path section 40W. This makes it possible to efficiently improve thermal uniformity by reducing the flow path step area of the first flow path section 40N.

 本実施形態の第一流路部40Nは、第一内側面40sと、第二内側面40tと、を有し、第一内側面40sは、貫通孔80の孔内周面80fと同心状に形成された円弧状に好ましく形成される。これにより、第一内側面40sと孔内周面80fとの間の壁部50の厚さTを一定とし、均熱性を高めることができる。 The first flow passage portion 40N of this embodiment has a first inner surface 40s and a second inner surface 40t, and the first inner surface 40s is preferably formed in an arc shape that is concentric with the hole inner surface 80f of the through hole 80. This makes it possible to make the thickness T of the wall portion 50 between the first inner surface 40s and the hole inner surface 80f constant and improve thermal uniformity.

 本実施形態の第二内側面40tは、貫通孔80の孔内周面80fと同心状に形成された円弧状に好ましく形成される。これにより、第一内側面40sと第二内側面40tが同心状に形成されることで、第一流路部40Nを工作機械で容易に形成することができる。 In this embodiment, the second inner surface 40t is preferably formed in an arc shape that is concentric with the inner peripheral surface 80f of the through hole 80. As a result, the first inner surface 40s and the second inner surface 40t are formed concentrically, and the first flow passage portion 40N can be easily formed by a machine tool.

 本実施形態の第一内側面40s、及び第二内側面40tは、軸方向から見た際、貫通孔80のセンターを中心として、20~300°の範囲に好ましく形成される。これにより、第一流路部40Nの流路段面積を小さくしつつ、貫通孔80の周囲における壁部50の剛性が過度に高まるのを抑えることができる。 In this embodiment, the first inner surface 40s and the second inner surface 40t are preferably formed in a range of 20 to 300° from the center of the through hole 80 when viewed in the axial direction. This makes it possible to reduce the flow path step area of the first flow path section 40N while preventing the rigidity of the wall section 50 around the through hole 80 from becoming excessively high.

 本実施形態の第一内側面40sと、第一内側面40sに接続される内側面40gとの間に、接続面40jが形成される。接続面40jは平面視で曲面であることが好ましい。これにより、冷媒流路40内における冷媒の流れにおいて、第一内側面40sと内側面40gとの境界部分で剥離が生じるのを抑えることができる。これにより、貫通孔80の周囲で、冷却効率が低い部分が生じることを抑え、均熱性が高められる。 In this embodiment, a connection surface 40j is formed between the first inner surface 40s and the inner surface 40g connected to the first inner surface 40s. The connection surface 40j is preferably a curved surface in a plan view. This can prevent separation from occurring at the boundary between the first inner surface 40s and the inner surface 40g during the flow of refrigerant in the refrigerant flow path 40. This prevents areas with low cooling efficiency from occurring around the through hole 80, improving thermal uniformity.

 本実施形態の貫通孔80の内周面と第一内側面40sとの間に形成される壁部50の厚さが、好ましくは1mm以上10mm以下である。これにより、壁部50の強度を確保しつつ、均熱性が低下することを抑える。 In this embodiment, the thickness of the wall portion 50 formed between the inner circumferential surface of the through hole 80 and the first inner surface 40s is preferably 1 mm or more and 10 mm or less. This ensures the strength of the wall portion 50 while preventing a decrease in thermal uniformity.

 また、本実施形態の内周流路部42は、外周流路部41よりも径方向内側に配置される。ベース部3は、静電チャック部2のうち軸方向から見て板状試料Wと重なる領域を積極的に冷却することで板状試料Wの温度を一定に保つ。本実施形態によれば、内周流路部42と外周流路部41とを設け、それぞれの流路構成を最適化することで、板状試料Wの外縁Waの近傍まで、静電チャック部2の均熱性を高めることができる。 In addition, the inner circumferential flow passage portion 42 in this embodiment is positioned radially inward from the outer circumferential flow passage portion 41. The base portion 3 actively cools the area of the electrostatic chuck portion 2 that overlaps with the plate-shaped sample W when viewed from the axial direction, thereby keeping the temperature of the plate-shaped sample W constant. According to this embodiment, by providing the inner circumferential flow passage portion 42 and the outer circumferential flow passage portion 41 and optimizing the configuration of each flow passage, it is possible to improve the thermal uniformity of the electrostatic chuck portion 2 up to the vicinity of the outer edge Wa of the plate-shaped sample W.

 <実施形態の変形例>
 なお、上記実施形態において、冷媒流路40が、外周流路部41と、内周流路部42とを有するようにしたが、これに限られない。
 図6は、実施形態の変形例の冷媒流路140を示す模式図である。以下に図3を基に第2実施形態の冷媒流路140について説明する。なお、上述の実施形態と同様の構成態様については、同一の符号を付し、詳細な説明を省略する。
<Modifications of the embodiment>
In the above embodiment, the refrigerant flow passage 40 has the outer circumferential flow passage portion 41 and the inner circumferential flow passage portion 42, but is not limited to this.
Fig. 6 is a schematic diagram showing a refrigerant flow path 140 according to a modified example of the embodiment. The refrigerant flow path 140 according to the second embodiment will be described below with reference to Fig. 3. Note that the same components as those in the above-described embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

(流路)
 本実施形態の冷媒流路140は、中心軸線Jの近傍で折り返す二重の渦巻状である。冷媒流路140の二重の渦巻きは、中心軸線Jに対し径方向外側に広がる。本実施形態の冷媒流路140は、全長に亘って一つながりである。本実施形態の冷媒流路140は、全長に亘って流路断面が矩形状であり、軸方向寸法が一様である。壁部150は、冷媒流路140の径方向に重なる部分同士の間に位置する。壁部150は、冷媒流路140を、中心軸線Jを中心とする渦巻状に画定する。
(Flow path)
The refrigerant flow path 140 of this embodiment has a double spiral shape that turns back near the central axis J. The double spiral of the refrigerant flow path 140 spreads radially outward with respect to the central axis J. The refrigerant flow path 140 of this embodiment is continuous over its entire length. The refrigerant flow path 140 of this embodiment has a rectangular flow path cross section over its entire length, and its axial dimension is uniform. The wall portion 150 is located between the radially overlapping portions of the refrigerant flow path 140. The wall portion 150 defines the refrigerant flow path 140 in a spiral shape centered on the central axis J.

 冷媒流路140は、幅が一定の外周流路部141と、外周流路部141よりも径方向内側に配置される内周流路部142とを有する。外周流路部141と内周流路部142とは、互いに連結している。本実施形態において、流入口140aは、内周流路部142に設けられ、流出口140bは、外周流路部141に設けられる。したがって、本実施形態の冷媒は、内周流路部142、外周流路部141の順で冷媒流路40内を流れる。 The refrigerant flow path 140 has an outer circumferential flow path portion 141 with a constant width, and an inner circumferential flow path portion 142 that is disposed radially inward of the outer circumferential flow path portion 141. The outer circumferential flow path portion 141 and the inner circumferential flow path portion 142 are connected to each other. In this embodiment, the inlet 140a is provided in the inner circumferential flow path portion 142, and the outlet 140b is provided in the outer circumferential flow path portion 141. Therefore, the refrigerant in this embodiment flows through the refrigerant flow path 40 in the order of the inner circumferential flow path portion 142 and the outer circumferential flow path portion 141.

 外周流路部141は、冷媒流路140において最外周に配置される。外周流路部141は、中心軸線Jに対して、例えば約6/10周~9/10周や、約7/10周~8/10周だけ、具体例を挙げれば約3/4周だけ、円弧状に延びる。外周流路部141の一端には、内周流路部142が接続される。外周流路部141の他端には、流出口140bが設けられる。また、外周流路部141は、軸方向から見て板状試料Wの外縁Waと重なることが好ましい。外周流路部141は、上述したように全長に亘って幅寸法が一様である。したがって、外周流路部141は、全長に亘って流路断面積が一様である。 The outer peripheral flow passage portion 141 is disposed at the outermost periphery of the refrigerant flow passage 140. The outer peripheral flow passage portion 141 extends in an arc shape, for example, about 6/10 to 9/10 or about 7/10 to 8/10 of a circumference, or in a specific example, about 3/4 of a circumference, around the central axis J. The inner peripheral flow passage portion 142 is connected to one end of the outer peripheral flow passage portion 141. An outlet 140b is provided at the other end of the outer peripheral flow passage portion 141. It is also preferable that the outer peripheral flow passage portion 141 overlaps with the outer edge Wa of the plate-shaped sample W when viewed from the axial direction. As described above, the outer peripheral flow passage portion 141 has a uniform width dimension over its entire length. Therefore, the outer peripheral flow passage portion 141 has a uniform flow passage cross-sectional area over its entire length.

 内周流路部142は、内側から順に、それぞれが一定の幅を有する第1円弧部142Aと第2円弧部142Bと第3円弧部142Cを有する。内周流路部142はさらに、前記円弧部どうしを連結する、又は外周流路部141と第2円弧部142Bを連結する、第1連結部143Aと第2連結部143Bと第3連結部143Cとを有する。第1円弧部142A、第2円弧部142B、および第3円弧部142Cは、中心軸線Jを中心として、円弧状に延びる。第1円弧部142A、第2円弧部142B、および第3円弧部142Cは、中心軸線Jを中心として同心円状に配置される。 The inner circumferential flow passage portion 142 has, from the inside, a first arc portion 142A, a second arc portion 142B, and a third arc portion 142C, each of which has a constant width. The inner circumferential flow passage portion 142 further has a first connecting portion 143A, a second connecting portion 143B, and a third connecting portion 143C, which connect the arc portions together or connect the outer circumferential flow passage portion 141 and the second arc portion 142B. The first arc portion 142A, the second arc portion 142B, and the third arc portion 142C extend in an arc shape centered on the central axis J. The first arc portion 142A, the second arc portion 142B, and the third arc portion 142C are arranged concentrically centered on the central axis J.

 第1円弧部142Aは、内周流路部142の最内周に位置する。第1円弧部142Aは、中心軸線Jに対して約3/4周だけ円弧状に延びる。第1円弧部142Aの一端には、第1連結部143Aが接続される。また、第1円弧部142Aの他端には、第2連結部143Bが接続される。第1円弧部142Aは、全長に亘って幅寸法が一様である。したがって、第1円弧部142Aは、全長に亘って流路断面積が一様である。 The first arc portion 142A is located at the innermost circumference of the inner circumferential flow path portion 142. The first arc portion 142A extends in an arc shape for approximately 3/4 of the circumference around the central axis J. The first connecting portion 143A is connected to one end of the first arc portion 142A. The second connecting portion 143B is connected to the other end of the first arc portion 142A. The width dimension of the first arc portion 142A is uniform over its entire length. Therefore, the first arc portion 142A has a uniform flow path cross-sectional area over its entire length.

 第2円弧部142Bは、第1円弧部142Aの径方向外側に位置する。第2円弧部142Bは、径方向において、第1円弧部142Aと第3円弧部142Cとの間に位置する。第2円弧部142Bは、中心軸線Jに対して約3/4周だけ円弧状に延びる。第2円弧部142Bの一端には、第1連結部143Aが接続される。また、第2円弧部142Bの他端には、第3連結部143Cが接続される。第2円弧部142Bは、全長に亘って幅寸法が一様である。したがって、第2円弧部142Bは、全長に亘って流路断面積が一様である。 The second arc portion 142B is located radially outside the first arc portion 142A. The second arc portion 142B is located radially between the first arc portion 142A and the third arc portion 142C. The second arc portion 142B extends in an arc shape for approximately 3/4 of a circumference around the central axis J. The first connecting portion 143A is connected to one end of the second arc portion 142B. The third connecting portion 143C is connected to the other end of the second arc portion 142B. The second arc portion 142B has a uniform width dimension over its entire length. Therefore, the second arc portion 142B has a uniform flow passage cross-sectional area over its entire length.

 第3円弧部142Cは、第2円弧部142Bの径方向外側に位置する。第3円弧部142Cは、径方向において、第2円弧部142Bと外周流路部141との間に位置する。第3円弧部142Cは、中心軸線Jに対して約3/4周だけ円弧状に延びる。第3円弧部142Cの一端には、第2連結部143Bが接続される。また、第3円弧部142Cの他端には、流入口140aが設けられる。第3円弧部142Cは、全長に亘って幅寸法が一様である。したがって、第3円弧部142Cは、全長に亘って流路断面積が一様である。 The third arc portion 142C is located radially outside the second arc portion 142B. The third arc portion 142C is located radially between the second arc portion 142B and the outer peripheral flow passage portion 141. The third arc portion 142C extends in an arc shape for approximately 3/4 of a circumference around the central axis J. The second connecting portion 143B is connected to one end of the third arc portion 142C. The inlet 140a is provided at the other end of the third arc portion 142C. The width dimension of the third arc portion 142C is uniform over its entire length. Therefore, the third arc portion 142C has a uniform flow passage cross-sectional area over its entire length.

 第2円弧部142Bの幅寸法D2は、第1円弧部142Aの幅寸法D1よりも小さい(D2<D1)。また、第3円弧部142Cの幅寸法D3は、第2円弧部142Bの幅寸法D2よりも小さい(D3<D2)。すなわち、複数の円弧部142A、142B、142Cのうち、他の円弧部よりも径方向外側に位置する円弧部は、内側に位置する他の円弧部よりも、径方向寸法(幅)が小さい(D3<D2<D1)。さらに、外周流路部141の幅寸法D4は、内周流路部142の何れの位置にある幅寸法よりも大きい(D4>D1、D4>D2、D4>D3)。すなわち、外周流路部141の幅寸法D4は、内周流路部142の幅寸法D1、D2、D3よりも大きい。 The width dimension D2 of the second arc portion 142B is smaller than the width dimension D1 of the first arc portion 142A (D2<D1). Furthermore, the width dimension D3 of the third arc portion 142C is smaller than the width dimension D2 of the second arc portion 142B (D3<D2). In other words, among the multiple arc portions 142A, 142B, and 142C, the arc portion located radially outward from the other arc portions has a smaller radial dimension (width) than the other arc portions located on the inner side (D3<D2<D1). Furthermore, the width dimension D4 of the outer circumferential flow passage portion 141 is larger than the width dimension at any position of the inner circumferential flow passage portion 142 (D4>D1, D4>D2, D4>D3). In other words, the width dimension D4 of the outer circumferential flow passage portion 141 is larger than the width dimensions D1, D2, and D3 of the inner circumferential flow passage portion 142.

 第1連結部143Aは、第1円弧部142Aの一端と第2円弧部142Bの一端とを繋ぐ。本実施形態において、第1円弧部142Aの一端と第2円弧部142Bの一端とは、径方向に並んで配置される。第1連結部143Aは、ヘアピン状に折り返すように、すなわちU字状に、第1円弧部142Aと第2円弧部142Bとを繋ぐ。第1連結部143Aは、第1円弧部142A側の端部から第2円弧部142B側の端部に向かって徐々に幅寸法を小さくする。 The first connecting portion 143A connects one end of the first arc portion 142A to one end of the second arc portion 142B. In this embodiment, one end of the first arc portion 142A and one end of the second arc portion 142B are arranged side by side in the radial direction. The first connecting portion 143A connects the first arc portion 142A to the second arc portion 142B in a manner that bends back in a hairpin shape, i.e., in a U-shape. The width dimension of the first connecting portion 143A gradually decreases from the end on the first arc portion 142A side toward the end on the second arc portion 142B side.

 第1連結部143Aは曲がっており、互いに対向する側面、すなわち内コーナ面144と外コーナ面145とを有する。内コーナ面144は、中心点C1を中心とする半円状の円弧面である。また、外コーナ面145は、中心点C2を中心とする半円状の円弧面である。内コーナ面144の曲率半径は、外コーナ面145の曲率半径よりも小さい。また、内コーナ面144の中心点C1と、外コーナ面145の中心点C2とは、互いに異なる位置に配置される。すなわち、内コーナ面144と外コーナ面145とは、それぞれ異なる中心を有する円弧面である。これにより、第1連結部143Aは、幅寸法が互いに異なる第1円弧部142Aと第2円弧部142Bとを滑らかに繋ぐ。 The first connecting portion 143A is curved and has opposing side surfaces, i.e., an inner corner surface 144 and an outer corner surface 145. The inner corner surface 144 is a semicircular arc surface centered on a center point C1. The outer corner surface 145 is a semicircular arc surface centered on a center point C2. The radius of curvature of the inner corner surface 144 is smaller than the radius of curvature of the outer corner surface 145. The center point C1 of the inner corner surface 144 and the center point C2 of the outer corner surface 145 are located at different positions. In other words, the inner corner surface 144 and the outer corner surface 145 are arc surfaces with different centers. As a result, the first connecting portion 143A smoothly connects the first arc portion 142A and the second arc portion 142B, which have different width dimensions.

 第2連結部143Bは、第1円弧部142Aの他端と第3円弧部142Cの一端とを繋ぐ。第2連結部143Bは、ヘアピン状に折り返すように、第1円弧部142Aと第3円弧部142Cとを繋ぐ。第2連結部143Bは、第1連結部143Aよりも大きな曲率半径で第1連結部143Aに沿って延びる。第2連結部143Bは、第1円弧部142A側の端部から第3円弧部142C側の端部に向かって、徐々に幅寸法を小さくする。第2連結部143Bは、第1連結部143Aと同様の関係を有する内コーナ面と外コーナ面とを有することで、第1円弧部142Aと第3円弧部142Cとを滑らかに繋ぐ。 The second connecting portion 143B connects the other end of the first arc portion 142A to one end of the third arc portion 142C. The second connecting portion 143B connects the first arc portion 142A to the third arc portion 142C so as to bend back in a hairpin shape. The second connecting portion 143B extends along the first connecting portion 143A with a larger radius of curvature than the first connecting portion 143A. The second connecting portion 143B gradually reduces in width from the end on the first arc portion 142A side to the end on the third arc portion 142C side. The second connecting portion 143B has an inner corner surface and an outer corner surface that have the same relationship as the first connecting portion 143A, thereby smoothly connecting the first arc portion 142A to the third arc portion 142C.

 第3連結部143Cは、第2円弧部142Bの他端と外周流路部141の一端とを繋ぐ。第3連結部143Cは、ヘアピン状に折り返すように、第2円弧部142Bと外周流路部141とを繋ぐ。第3連結部143Cは、第2連結部143Bよりも大きな曲率半径で第2連結部143Bに沿って延びる。第3連結部143Cは、第2円弧部142B側の端部から外周流路部141側の端部に向かって、徐々に幅寸法を大きくする。第3連結部143Cは、第1連結部143Aと同様の関係を有する内コーナ面と外コーナ面とを有することで、第2円弧部142Bと外周流路部141とを滑らかに繋ぐ。 The third connecting portion 143C connects the other end of the second arc portion 142B to one end of the outer circumferential flow passage portion 141. The third connecting portion 143C connects the second arc portion 142B to the outer circumferential flow passage portion 141 so as to bend back in a hairpin shape. The third connecting portion 143C extends along the second connecting portion 143B with a larger radius of curvature than the second connecting portion 143B. The third connecting portion 143C gradually increases in width from the end on the second arc portion 142B side to the end on the outer circumferential flow passage portion 141 side. The third connecting portion 143C has inner corner surfaces and outer corner surfaces that have the same relationship as the first connecting portion 143A, thereby smoothly connecting the second arc portion 142B to the outer circumferential flow passage portion 141.

(壁部)
 壁部150は、内側から順に、それぞれが一定の幅を有する第1円弧壁150Aと第2円弧壁150Bと第3円弧壁150Cとを有する。第1円弧壁150A、第2円弧壁150B、および第3円弧壁150Cは、中心軸線Jを中心として円弧状に延びる。また、第1円弧壁150A、第2円弧壁150B、および第3円弧壁150Cは、中心軸線Jを中心として同心円状に配置される。
(Wall section)
The wall portion 150 has, from the inside, a first arc-shaped wall 150A, a second arc-shaped wall 150B, and a third arc-shaped wall 150C, each of which has a certain width. The first arc-shaped wall 150A, the second arc-shaped wall 150B, and the third arc-shaped wall 150C extend in an arc shape centered on a central axis J. The first arc-shaped wall 150A, the second arc-shaped wall 150B, and the third arc-shaped wall 150C are also arranged concentrically with the central axis J as the center.

 第1円弧壁150Aは、中心軸線Jに対して約3/4周だけ円弧状に延びる。第1円弧壁150Aは、径方向において第1円弧部142Aと第2円弧部142Bとの間に位置しこれらを画定する。第1円弧壁150Aは、全長に亘って径方向寸法が一様である。 The first arc wall 150A extends in an arc shape for approximately 3/4 of the circumference around the central axis J. The first arc wall 150A is located radially between the first arc portion 142A and the second arc portion 142B and defines them. The first arc wall 150A has a uniform radial dimension over its entire length.

 第2円弧壁150Bは、中心軸線Jに対して約3/4周だけ円弧状に延びる。第2円弧壁150Bは、径方向において第2円弧部142Bと第3円弧部142Cとの間に位置しこれらを画定する。第2円弧壁150Bは、全長に亘って径方向寸法が一様である。 The second arc wall 150B extends in an arc shape for approximately 3/4 of the circumference around the central axis J. The second arc wall 150B is located radially between the second arc portion 142B and the third arc portion 142C and defines them. The second arc wall 150B has a uniform radial dimension over its entire length.

 第3円弧壁150Cは、中心軸線Jに対して約3/4周だけ円弧状に延びる。第3円弧壁150Cは、径方向において第3円弧部142Cと外周流路部141との間に位置しこれらを画定する。第3円弧壁150Cは、全長に亘って径方向寸法が一様である。 The third arc wall 150C extends in an arc shape for approximately 3/4 of the circumference around the central axis J. The third arc wall 150C is located radially between the third arc portion 142C and the outer peripheral flow passage portion 141, and defines them. The third arc wall 150C has a uniform radial dimension over its entire length.

 第2円弧壁150Bの径方向寸法E2は、第1円弧壁150Aの径方向寸法E1よりも小さい(E2<E1)。また、第3円弧壁150Cの径方向寸法E3は、第2円弧壁150Bの径方向寸法E2よりも小さい(E3<E2)。すなわち、複数の円弧壁150A、150B、150Cのうち、他の円弧壁よりも径方向外側に位置する円弧壁は、他の円弧壁よりも径方向寸法が小さい(E3<E2<E1)。なお壁部150は、第1円弧部142Aに囲まれた中心に位置する円状の壁部や、第1連結部143Aに囲まれた略半円形の壁部や、第1連結部143Aと第2連結部143Bの間に位置する壁部や、第2連結部143Bと第3連結部143Cの間に位置する壁部も好ましく有する。 The radial dimension E2 of the second arc wall 150B is smaller than the radial dimension E1 of the first arc wall 150A (E2<E1). The radial dimension E3 of the third arc wall 150C is smaller than the radial dimension E2 of the second arc wall 150B (E3<E2). That is, among the multiple arc walls 150A, 150B, and 150C, the arc wall located radially outward from the other arc walls has a smaller radial dimension than the other arc walls (E3<E2<E1). The wall portion 150 preferably also has a circular wall portion located at the center surrounded by the first arc portion 142A, a substantially semicircular wall portion surrounded by the first connecting portion 143A, a wall portion located between the first connecting portion 143A and the second connecting portion 143B, and a wall portion located between the second connecting portion 143B and the third connecting portion 143C.

 このような変形例の冷媒流路140においても、貫通孔80付近に、上記実施形態と同様、上記関係を有する第一流路部140Nと、第一流路部140Nに接続する第二流路部140Wと、を有するようにしてもよい。このような構成により、貫通孔80の周囲で、流路断面積が狭められる。したがって、冷媒流路140における冷媒の流速は、流路断面積が大きい第二流路部140Wに対し、流路断面積が小さい第一流路部140Nで大きくなり、1第一流路部40Nにおける冷却性が高まる。その結果、均熱性が高い静電チャック装置1を提供することができる。 In this modified coolant flow path 140, a first flow path portion 140N having the above-mentioned relationship and a second flow path portion 140W connected to the first flow path portion 140N may be provided near the through hole 80, as in the above embodiment. With this configuration, the flow path cross-sectional area is narrowed around the through hole 80. Therefore, the flow velocity of the coolant in the coolant flow path 140 is higher in the first flow path portion 140N, which has a smaller flow path cross-sectional area, compared to the second flow path portion 140W, which has a larger flow path cross-sectional area, and the cooling performance in the first flow path portion 140N is improved. As a result, an electrostatic chuck device 1 with high thermal uniformity can be provided.

 また、本変形例のベース部103によれば、上述の実施形態と同様に、内周流路部142の流路断面積が中心軸線Jから離れるに従い小さくなることで、中心軸線Jから離れるに従い流速は大きくなり、中心軸線Jから離れた領域での冷却能力を高め、静電チャック部2の載置面11aの均熱性を高めることができる。また、本変形例のベース部103によれば、上述の実施形態と同様に、外周流路部141の流路断面積が、内周流路部142の流路断面積よりも大きい。これにより、静電チャック部2を十分に冷却することができる。 Furthermore, according to the base portion 103 of this modified example, as in the above embodiment, the flow path cross-sectional area of the inner circumferential flow path portion 142 decreases with increasing distance from the central axis J, so that the flow rate increases with increasing distance from the central axis J, improving the cooling capacity in the area away from the central axis J and improving the thermal uniformity of the mounting surface 11a of the electrostatic chuck portion 2. Further, according to the base portion 103 of this modified example, as in the above embodiment, the flow path cross-sectional area of the outer circumferential flow path portion 141 is larger than the flow path cross-sectional area of the inner circumferential flow path portion 142. This allows the electrostatic chuck portion 2 to be sufficiently cooled.

 以上、添付図面を参照しながら本発明に係る好適な実施の形態例について説明したが、本発明は係る例に限定されないことは言うまでもない。上述した例において示した各構成部材の諸形状や組み合わせ等は一例であって、本発明の主旨から逸脱しない範囲において設計要求等に基づき種々変更可能である。 The above describes preferred embodiments of the present invention with reference to the attached drawings, but it goes without saying that the present invention is not limited to these examples. The shapes and combinations of the components shown in the above examples are merely examples, and various modifications can be made based on design requirements, etc., without departing from the spirit of the present invention.

 例えば、上述の実施形態、及び変形例では、内周流路部42,142の流路断面積が中心軸線Jから離れるに従い小さくなるようにし、外周流路部41,141の流路断面積が、内周流路部42,142の流路断面積よりも大きくなるようにしたが、これに限られない。例えば、外周流路部41,141と内周流路部42,142とで、流路断面積を一定とする場合であっても、貫通孔80の周囲において、上記で示したような構成を適用してもよい。
 また、冷媒流路の流路断面が矩形状であり軸方向寸法が全長に亘って一様である場合について説明したが、冷媒流路の断面形状は上述の実施形態に限定されない。例えば、冷媒流路は、軸方向寸法を異ならせることで冷媒流路の流路断面積を変化させてもよい。
For example, in the above-described embodiment and modified example, the flow path cross-sectional area of the inner circumferential flow path portion 42, 142 is made smaller with increasing distance from the central axis J, and the flow path cross-sectional area of the outer circumferential flow path portion 41, 141 is made larger than the flow path cross-sectional area of the inner circumferential flow path portion 42, 142, but this is not limited to the above. For example, even if the flow path cross-sectional area is constant in the outer circumferential flow path portion 41, 141 and the inner circumferential flow path portion 42, 142, the configuration as shown above may be applied around the through hole 80.
Although the above embodiment has been described with the coolant flow passage having a rectangular cross section and a uniform axial dimension over the entire length, the cross-sectional shape of the coolant flow passage is not limited to the above embodiment. For example, the cross-sectional area of the coolant flow passage may be changed by varying the axial dimension of the coolant flow passage.

1…静電チャック装置
2…静電チャック部
3,103…ベース部
3a…支持面
3b…底面
4…接着剤
5…ヒータエレメント
8…接着剤層
11…載置板
11a…載置面
11b…複数の突起部
12…支持板
13…静電吸着用電極
14…絶縁材層
17…周縁壁
31g…凹溝
35…上側部材
36…下側部材
40,140…冷媒流路
40a,140a…流路の流入口
40b,140b…流路の流出口
40g,40h…第二流路部の内側面
40j,40k…第一流路部と第二流路部の間の接続面
40N、140N…第一流路部
40W、140W…第二流路部
40s…第一流路部の第一内側面
40t…第一流路部の第二内側面
41,141…外周流路部
42,142…内周流路部
50,150…壁部
50A…内周側の領域
50B…外周側の領域
80…貫通孔
80f…孔内周面
142A…第1円弧部(流路部)
142B…第2円弧部(流路部)
142C…第3円弧部(流路部)
143A…第1連結部(流路部)
143B…第2連結部(流路部)
143C…第3連結部(流路部)
144…第1連結部の内コーナ面
145…第1連結部の外コーナ面
150…壁部
150A…第1円弧壁(壁部)
150B…第2円弧壁(壁部)
150C…第3円弧壁(壁部)
C1,C2…中心点
D1…第1円弧部の幅寸法
D2…第2円弧部の幅寸法
D3…第3円弧部の幅寸法
D4…外周流路部の幅寸法
E1…第1円弧壁の径方向寸法
E2…第2円弧壁の径方向寸法
E3…第3円弧壁の径方向寸法
Dx…冷媒流路の軸方向寸法
J…中心軸線
L1…二点鎖線
P1…貫通孔の周囲の壁部部分
P2…冷媒流路が形成されている部分
T…厚さ
W…板状試料、
Wa…板状試料外縁
Wn…幅寸法
Ww…幅寸法
θ…貫通孔のセンターを中心とした角度
1 ... electrostatic chuck device 2 ... electrostatic chuck portion 3, 103 ... base portion 3a ... support surface 3b ... bottom surface 4 ... adhesive 5 ... heater element 8 ... adhesive layer 11 ... mounting plate 11a ... mounting surface 11b ... multiple protrusions 12 ... support plate 13 ... electrostatic attraction electrode 14 ... insulating material layer 17 ... peripheral wall 31g ... groove 35 ... upper member 36 ... lower member 40, 140 ... refrigerant flow path 40a, 140a ... inlet 40b, 140b of flow path ... outlet 40g of flow path, 40h... Inner surface of second flow path portion 40j, 40k... Connection surface between first flow path portion and second flow path portion 40N, 140N... First flow path portion 40W, 140W... Second flow path portion 40s... First inner surface of first flow path portion 40t... Second inner surface of first flow path portion 41, 141... Outer peripheral flow path portion 42, 142... Inner peripheral flow path portion 50, 150... Wall portion 50A... Inner peripheral region 50B... Outer peripheral region 80... Through hole 80f... Hole inner peripheral surface 142A... First arc portion (flow path portion)
142B: second arcuate portion (flow passage portion)
142C: Third arc portion (flow path portion)
143A: First connecting portion (flow path portion)
143B: Second connecting portion (flow path portion)
143C...Third connecting portion (flow path portion)
144: inner corner surface of the first connecting portion; 145: outer corner surface of the first connecting portion; 150: wall portion; 150A: first arc wall (wall portion);
150B: Second arc wall (wall portion)
150C...Third arc wall (wall portion)
C1, C2...center point D1...width dimension D2 of first arcuate portion...width dimension D3 of second arcuate portion...width dimension D4 of third arcuate portion...width dimension E1 of outer peripheral flow passage portion...radial dimension E2 of first arcuate wall...radial dimension E3 of second arcuate wall...radial dimension Dx of third arcuate wall...axial dimension J of refrigerant flow passage...center axis L1...two-dot chain line P1...wall portion P2 around through hole...portion T where refrigerant flow passage is formed...thickness W...plate-shaped sample,
Wa: Outer edge of plate-shaped sample Wn: Width dimension Ww: Width dimension θ: Angle centered on the center of the through hole

Claims (9)

 板状試料を載置する載置面を有し、内部に静電吸着用電極が設けられた、板状の静電チャック部と、
 中心軸線を中心とする円盤状であり、その支持面において、前記静電チャック部を前記載置面の反対側から支持するベース部と、を備え、
 前記ベース部は、
  前記ベース部を、前記中心軸線の軸方向に貫通する、少なくとも1つの貫通孔と、
  前記ベース部の内部に設けられ前記支持面に沿って延びる冷媒流路と、を有し、
 前記冷媒流路は、
 第一流路部と、前記第一流路部の両端とそれぞれ結合する第二流路部とを有し、
  前記第一流路部は、前記貫通孔を中心として、前記貫通孔の孔径方向外側に、前記貫通孔から間隔をあけて、形成され、
  前記第二流路部は、前記第一流路部の、前記冷媒流路の延伸方向における両側に、それぞれ位置し、
 前記第一流路部の流路断面積は、前記第二流路部の流路断面積よりも小さい、
静電チャック装置。
a plate-shaped electrostatic chuck portion having a mounting surface on which a plate-shaped sample is mounted and having an electrode for electrostatic attraction provided therein;
a base portion having a disk shape centered on a central axis line and configured to support the electrostatic chuck portion on a support surface opposite to the placement surface,
The base portion is
At least one through hole penetrating the base portion in an axial direction of the central axis;
a coolant flow path provided inside the base portion and extending along the support surface;
The refrigerant flow path is
A first flow path portion and a second flow path portion respectively connected to both ends of the first flow path portion,
The first flow path portion is formed at a distance from the through hole, on the outer side of the through hole in a hole diameter direction, with the through hole as a center,
The second flow path portions are located on both sides of the first flow path portion in an extension direction of the refrigerant flow path,
The flow path cross-sectional area of the first flow path portion is smaller than the flow path cross-sectional area of the second flow path portion.
Electrostatic chuck device.
 前記第一流路部は、前記第二流路部よりも、前記軸方向および前記延伸方向に交差する方向の幅寸法が小さい、
請求項1に記載の静電チャック装置。
The first flow path portion has a smaller width dimension in a direction intersecting the axial direction and the extension direction than the second flow path portion.
2. The electrostatic chuck device of claim 1.
 前記第一流路部の流路断面積は、前記第二流路部の流路断面積に対し、0.5倍以上1.0倍未満である、
請求項1または2に記載の静電チャック装置。
The flow path cross-sectional area of the first flow path portion is 0.5 times or more and less than 1.0 times the flow path cross-sectional area of the second flow path portion.
3. The electrostatic chuck device according to claim 1 or 2.
 前記第一流路部は、互いに向き合う、第一内側面と第二内側面とを有し、
  前記第一内側面は、前記貫通孔の前記孔径方向外側に、前記貫通孔から間隔をあけて形成され、前記孔径方向外側を向き、
  前記第二内側面は、前記第一内側面よりも前記孔径方向外側に、前記第一内側面から間隔をあけて形成され、孔径方向内側を向き、
 前記第一内側面は、前記貫通孔の孔内周面と同心状に形成された円弧状に形成される、請求項1または2に記載の静電チャック装置。
The first flow path portion has a first inner surface and a second inner surface facing each other,
The first inner surface is formed at a distance from the through hole on the outer side in the hole radial direction of the through hole and faces the outer side in the hole radial direction,
The second inner surface is formed outwardly of the first inner surface in the hole radial direction and spaced apart from the first inner surface, and faces inwardly in the hole radial direction,
The electrostatic chuck device according to claim 1 , wherein the first inner surface is formed in an arc shape that is concentric with an inner circumferential surface of the through hole.
 前記第二内側面は、前記貫通孔の孔内周面と同心状に形成された円弧状に形成される、請求項4に記載の静電チャック装置。 The electrostatic chuck device according to claim 4, wherein the second inner surface is formed in an arc shape concentric with the inner peripheral surface of the through hole.  前記第一内側面、及び前記第二内側面は、前記軸方向から見た際、前記貫通孔を中心として20~300°の範囲に形成される、
請求項5に記載の静電チャック装置。
The first inner surface and the second inner surface are formed in a range of 20 to 300° around the through hole when viewed in the axial direction.
6. The electrostatic chuck device according to claim 5.
 前記第一流路部に対して前記冷媒流路の前記延伸方向の少なくとも一方側に位置する前記第二流路部において、前記第一内側面に接続される前記第二流路部の内側面と、前記第一内側面との間に、前記軸方向から見た際に円弧状に湾曲した接続面が形成される、
請求項4に記載の静電チャック装置。
In the second flow path portion located on at least one side of the first flow path portion in the extension direction of the refrigerant flow path, a connection surface that is curved in an arc shape when viewed in the axial direction is formed between an inner surface of the second flow path portion that is connected to the first inner surface and the first inner surface.
5. The electrostatic chuck device according to claim 4.
 前記貫通孔の内周面と前記第一内側面との間に形成される壁部の厚さが、1mm以上10mm以下である、
請求項4に記載の静電チャック装置。
The thickness of the wall portion formed between the inner circumferential surface of the through hole and the first inner side surface is 1 mm or more and 10 mm or less.
5. The electrostatic chuck device according to claim 4.
 前記冷媒流路は、平面視で連続する渦巻状であり、
 前記ベース部は、前記冷媒流路を区画する、壁部をさらに有し、
 前記貫通孔は、平面視で円形であり、前記壁部の少なくとも一部を前記軸方向に貫通し、
 前記壁部は、前記貫通孔が設けられた第一部分と、前記第一部分の両側に位置する貫通孔が設けられていない第二部分を有し、
 前記第一部分の幅は、平面視で、前記第二部分の幅よりも大きく、
 前記第一部分の前記幅は徐々に変化し、
 前記第一部分の側面は前記第一流路の内側面を形成し、前記第二部分の側面は前記第二流路の内側面を形成する、
請求項1に記載の静電チャック装置。
The refrigerant flow path has a continuous spiral shape in a plan view,
The base portion further includes a wall portion that defines the coolant flow path,
The through hole has a circular shape in a plan view and penetrates at least a portion of the wall portion in the axial direction.
the wall portion has a first portion in which the through hole is provided and a second portion located on both sides of the first portion in which no through hole is provided,
The width of the first portion is greater than the width of the second portion in a plan view,
the width of the first portion varies gradually;
A side surface of the first portion forms an inner surface of the first flow passage, and a side surface of the second portion forms an inner surface of the second flow passage.
2. The electrostatic chuck device of claim 1.
PCT/JP2024/014186 2023-04-14 2024-04-05 Electrostatic chuck device Pending WO2024214659A1 (en)

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JP2023-066281 2023-04-14

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Publication Number Publication Date
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019131115A1 (en) * 2017-12-28 2019-07-04 住友大阪セメント株式会社 Electrostatic chuck device
JP2020145238A (en) * 2019-03-04 2020-09-10 日本碍子株式会社 Wafer mounting device
JP2023058845A (en) * 2021-10-14 2023-04-26 日本碍子株式会社 Wafer mounting stage

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4749072B2 (en) 2005-07-26 2011-08-17 京セラ株式会社 Wafer holder

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019131115A1 (en) * 2017-12-28 2019-07-04 住友大阪セメント株式会社 Electrostatic chuck device
JP2020145238A (en) * 2019-03-04 2020-09-10 日本碍子株式会社 Wafer mounting device
JP2023058845A (en) * 2021-10-14 2023-04-26 日本碍子株式会社 Wafer mounting stage

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