WO2024213465A1 - Dispositif piezoelectrique flexible de mesure de deformation, unidirectionnel, bidirectionel ou omnidirectionnel - Google Patents
Dispositif piezoelectrique flexible de mesure de deformation, unidirectionnel, bidirectionel ou omnidirectionnel Download PDFInfo
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- WO2024213465A1 WO2024213465A1 PCT/EP2024/059205 EP2024059205W WO2024213465A1 WO 2024213465 A1 WO2024213465 A1 WO 2024213465A1 EP 2024059205 W EP2024059205 W EP 2024059205W WO 2024213465 A1 WO2024213465 A1 WO 2024213465A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
Definitions
- the invention relates to deformation sensors based on a piezoelectric measuring element, i.e. using the piezoelectric behavior of a material to transform into an electrical signal a deformation that it undergoes under the effect of external forces, for example when it is stuck to a surface and the latter deforms.
- Strain sensors are used to estimate the surface deformation undergone by an element of any mechanical system when it is subjected to external forces (force and moments of force applied to it by external elements), in a wide range of applications: aerospace, machine tools, transport, hydrocarbon industry, food or even chemistry.
- the first technology is based on resistive strain gauges.
- This type of gauge includes an electrically conductive element, with a geometry giving it different sensitivities depending on the orientation of a strain imposed on it, which is referred to as its directivity. represents such a conductive element CE.
- the arrows indicated SA for "sensitive axis" and TA for "transverse axis” indicate respectively an axis of maximum sensitivity and an axis of minimum sensitivity, the second being perpendicular to the first. In practice, the axis of maximum sensitivity is aligned with the expected direction of the deformation to be characterized. Resistive gauges have good directivity, but suffer from low sensitivity and need to be electrically powered to operate.
- the second technology is based on piezoelectric sensors, which are generally more sensitive but also less directional than resistive gauges.
- This type of sensor includes a so-called “piezoelectric” element, which generates, by piezoelectric effect, the appearance of electrical charges on its faces under the effect of a constraint applied to it.
- piezoelectric piezoelectric element
- a first type corresponds to a deformation sensor comprising a rigid housing HOUS housing a crystal Q such as a piezoelectric quartz crystal, as illustrated by the DynSens sensor of the which represents in A) a cross-sectional view and in B) a top view of the sensor.
- the rigid housing has the function of limiting the amplitude of deformation of the crystal which, being relatively thick, cannot withstand excessive deformations without breaking.
- the crystal is secured to a wall of the housing intended to be fixed to a flat and smooth surface by gluing using a high-rigidity adhesive.
- the housing can also house an amplifier AMP connected to the crystal and to the outside by means of electrical connection wires CAB.
- the axes TA and SA are defined in the same way as for the resistive gauge of the .
- An application example is given by Fabio LM dos Santos et al., in “THE USE OF DYNAMIC STRAIN SENSORS AND MEASUREMENTS ON THE GROUND VIBRATION TESTING OF AN F-16 AIRCRAF”, International Forum on Aeroelasticity and Stuctural Dynamics, IFASD 2015-122.
- a second type is that of piezoelectric surface deformation sensors.
- the first advantage of these sensors is that they are passive, and therefore do not require an electrical supply.
- Such sensors comprise a piezoelectric element, generally a quartz crystal, and a rigid and relatively bulky mechanical structure limiting the deformation of the piezoelectric element to a single direction. These sensors are generally fixed to a flat surface by screwing, as described for example in patent document US 4,314,481 A.
- the use of a rigid and relatively bulky mechanical structure requiring a suitable geometry to be able to be implemented and intrinsically influencing the measurement carried out, strongly limits the field of application of this type of sensor.
- a third type is that of composite structures comprising PZT (or lead zirconate titanate) bars located between sheets of polymer materials and interdigitated electrodes, structures called "Micro-Fiber Composites" in English terminology. They have the advantages of a directivity obtained by the geometry of the PZT bars and a greater flexibility than the piezoelectric sensors mentioned above, but have a complex structure and require a polarization obtained by means of the application of an electric field. Reference can be made to the conference article by Wilkie, W. K. et al.: “Low-cost piezocomposite actuator for structural control applications", Proceedings of the SPIE, Volume 3991, p. 323-334 (2000). A disadvantage of such sensors is their temperature dependence due to the presence of polymer material parts and insufficient flexibility for certain applications.
- PVDF piezoelectric polyvinylidene fluoride
- a fifth type is that of a vibration sensor described in patent document FR 3 122 985 and based on a thin layer of piezoelectric ceramic carried by a flexible support.
- This sensor is flexible, but not directional and is not intended for a quantitative measurement of a deformation or a force.
- the applicant's objective is to propose a strain sensor device combining advantages that can be found individually in the various existing strain sensors, based on the use of a thin piezoelectric element.
- a first aspect of the invention is a thin monocrystalline piezoelectric element in the form of a plate extending in an extension plane defined by a first direction and a second direction normal to the first direction, with dimensions in the first direction and the second direction each greater than 100 ⁇ m and with a thickness of less than 50 ⁇ m, a ratio of the thickness to the dimension in the first direction or the dimension in the second direction being less than 0.1, the piezoelectric element having a first sensitivity S x to deformation in the first direction and a second sensitivity S y to deformation in the second direction, a crystalline orientation of the element being such that abs(S y /S x ) ⁇ 0.1, corresponding to a so-called "unidirectional" sensitivity, abs((S y +S x )/S x ) ⁇ 0.1, corresponding to a so-called "bidirectional" sensitivity, or for at least two first directions of the extension plane making an angle between them of between 30°
- Such a thin piezoelectric element is suitable to form the basis of a passive strain sensor, which can combine accuracy, sensitivity, conformability, flexibility, lightness, stability, linearity, directivity and applicability to wide strain ranges.
- this piezoelectric element can measure deformations greater than 5000 micrometers per meter with a resolution of the order of 1 nanometer of deformation per meter.
- These figures compare with those of conventional resistive gauges which can measure deformations of up to 12000 micrometers per meter but with a much lower resolution, of the order of 1 micrometer of deformation per meter, or with those of piezoelectric gauges in a box which are only capable of measuring deformations limited to approximately 300 micrometers per meter with a resolution of 1 nanometer per meter.
- This thin piezoelectric element may be provided with a pair of electrically conductive layers located respectively on two opposite faces of the thin piezoelectric element.
- the invention extends to a deformation sensor comprising at least one thin piezoelectric element according to the invention, located on a flexible sheet.
- the at least one thin piezoelectric element may be encapsulated between the flexible sheet and another flexible sheet;
- the sensor may comprise at least one charge amplifier connected to the at least one thin piezoelectric element;
- the sensor may comprise a plurality of thin piezoelectric elements according to the invention, oriented in different directions having at least a 30° difference between them;
- the sensor may comprise a first, a second and a third piezoelectric thin elements, each having the characteristic abs(S y /S x ) ⁇ 0.1, the first direction of the second piezoelectric thin element being able to make an angle of 90° with the first direction of the first piezoelectric thin element, the first direction of the third piezoelectric thin element being able to make an angle of 45° with the first direction of the first piezoelectric thin element;
- the sensor may comprise a first, a second and a third piezoelectric thin elements, each of which may have the characteristic abs(S y /S x ) ⁇ 0.1, the first direction of the second piezoelectric thin element being able to make an angle of 120° with the first direction of the first piezoelectric thin element, the first direction of the third piezoelectric thin element being able to make an angle of 240° with the first direction of the first piezoelectric thin element;
- the sensor may comprise a plurality of charge amplifiers each connected to a respective one of the thin piezoelectric elements;
- - a sensor can combine at least two sensors according to the invention electrically connected in parallel.
- the invention also extends to an apparatus provided with at least one of the deformation sensors according to the invention.
- the apparatus may be a ring provided with at least two deformation sensors of the unidirectional or omnidirectional type, the ring being configured to serve as a human/machine interface, or a smartphone equipped with at least one deformation sensor and configured to warn a user when a deformation measured on the basis of signals from the at least one sensor exceeds a predetermined threshold or to serve as a human/machine interface.
- the objective of the present invention is to provide piezoelectric elements suitable for use in sensors combining the advantages of the various types of sensors mentioned above, in particular with regard to the aspects of sensitivity and directivity, but also of precision, conformability, flexibility, lightness, stability, linearity, directivity and applicability to wide ranges of deformations.
- the sections below aim to explain how the inventors have managed to determine the characteristics necessary for piezoelectric elements so that, when integrated into sensors, the latter can produce such advantages.
- the behavior of piezoelectric materials can be described by means of three tensors: the dielectric permittivity tensor at constant stress, the compliance tensor at constant electric field, and the piezoelectric tensor .
- Voigt notation is used.
- strain tensor and electric displacement in the material are connected to the electric field and the stress tensor by the following equations 1 and 2 called “piezoelectric equations”:
- the tensor represents the electric charge generated by the piezoelectric material when a stress represented by the tensor is applied to it.
- the analysis of the coefficient d 33 of the piezoelectric tensor gives the charge generated at the faces of a piezoelectric element in response to a component of the stress which is in the direction normal to these faces.
- the coefficient d 31 gives the charge generated on these same faces in response to a component of the stress parallel to them.
- the behavior of the material for different crystal orientations, or orientations of the piezoelectric element relative to the crystallographic axes of the crystal from which it originates, is obtained by applying the relevant transformations to the tensors defining the behavior of the material ( , , ).
- the inventors of the present invention have opted for a different approach from those of the analyses found in the literature. More specifically, instead of being interested in the response of a piezoelectric element to a given constraint, the inventors were interested in the electric charge generated by a piezoelectric element in response to a deformation thereof. As we will see below, this approach leads to investigating particular crystalline orientations, presenting interesting directivity characteristics for the unidirectional, bidirectional or omnidirectional detection of deformations.
- the dimensions of the thin piezoelectric element PIEZO considered in its extension plane are much larger than its thickness.
- the thin element can thus be described as having the shape of a plate.
- extension plane a thin piezoelectric element extending in an xy plane called "extension plane” hereinafter, defined by two directions x and y normal to each other and normal to a third direction z, which are directions specific to the thin piezoelectric element.
- thin elements verifying the conditions according to which L x and L y are at least ten times, preferably at least one hundred times, larger than L Z , this last dimension corresponding to the thickness of the thin element.
- the electric field is normal to the plates: the electric field has no component in the xy plane.
- Eq. 6 shows that the electrical displacement caused by uniaxial deformation in a thin piezoelectric depends not only on the piezoelectric tensor after rotation, but also of the reduced compliance tensor after rotation. Analyze only the piezoelectric tensor after rotation as usually practiced in the literature is insufficient to characterize the sensitivity of a thin piezoelectric element to a deformation applied in a given direction.
- the sensitivity S x to deformation is obtained by integrating the component D 3 of the electrical displacement over the entire surface of the thin piezoelectric element covered on both sides by electrodes, sensitivity calculated for uniaxial deformation .
- S x A ⁇ D 3 /S 1 , where A is the surface area of the thin piezoelectric element covered on both sides by electrodes.
- the sensitivity S x is thus expressed in pC/(micro_m/m), and represents the electric charge generated by the piezoelectric element when a deformation of 1 micro_m/m is applied to it in the x direction.
- the objective here is to evaluate the directivity of the sensitivity of a thin monocrystalline element for a given crystal orientation of a bulk single crystal.
- the crystal orientations will be considered as defined in the IEEE standards on piezoelectricity in "IEEE Standard on Piezoelectricity", ANSI /I EEE Std 176-1987 , 1988.
- the directivity of the single-crystal piezoelectric thin element can be calculated analytically by applying a sequence R t of rotations to the thin element with respect to the crystallographic axes, corresponding to the definition of the IEEE crystal orientations (YXwl) q 1 /q 2 and illustrated by the .
- the sequence R t of rotations is composed of 4 successive rotations, R x (90), R y (q 1 ), R x (q 2 ) and R z (q 3 ) in this order.
- the first rotation R x (90) is done at an angle of 90° around the X axis, the xyz reference frame specific to the thin element being transformed into an x'y'z' reference frame.
- the second rotation R y (q 1 ) is done by rotation at an angle q 1 around the y' axis, the x'y'z' frame being transformed into an x''y''z'' frame.
- the third rotation R x (q 2 ) is done by rotation at an angle q 2 around the x'' axis, the x''y''z'' frame being transformed into a x'''y'''z''' frame.
- the fourth rotation R z (q 3 ) is done by rotation at an angle q 3 around the axis z''', the x'''y'''z'' frame being transformed into a x''''y'''z'''' frame.
- Each of the coordinate systems xyz, x'y'z', x''y''z'' and x'''y''z''' is respectively defined by the direction triplets x, y and z, x', y' and z', x'', y'' and z'', and x''', y''' and z'', and x'''', y'''' and z''', by successive application of the 4 rotations R x (90), R y (q 1 ), R x (q 2 ) and R z (q 3 ) to the piezoelectric element whose natural directions x, y and z initially correspond to the natural directions X, Y and Z of the massive single crystal considered.
- the first three rotations R x (90), R y (q 1 ) and R x (q 2 ) are used to define the crystal orientation of the thin element in the bulk crystal.
- the fourth rotation R z (q 3 ) is used to study the directivity of the sensitivity for a plane of crystal orientation defined by the first three rotations.
- the polar diagram of the allows us to deduce, for various crystal orientations defined by their q values 1 And q 2 , the sensitivity ratios between a so-called “transverse” sensitivity, considered in a direction perpendicular to a direction corresponding to a maximum sensitivity, and the so-called “longitudinal” sensitivity considered in the direction of maximum sensitivity, with ratios worth 55%, 100%, 0% and -99% for values of q 2 of 10°, 90°, 118° and 159°, respectively.
- the sensitivity ratio is 1, with a sensitivity ratio of 100%.
- the sensitivity is substantially constant on all orientations, and here of negative sign (omnidirectional sensitivity).
- a criterion for qualifying the behavior of a thin piezoelectric element as unidirectional is that the absolute value of a ratio of sensitivities S x and S y to deformation in its extension plane (which corresponds to its crystalline orientation in the massive single crystal from which it comes) in a first direction and a second direction normal to each other (either abs(S Y /S X ) or in mathematical notation) is less than 10%, preferably 5%, more preferably 2%, even more preferably 1%, and most preferably 0.1%.
- a criterion for qualifying the behavior of a thin piezoelectric element as bidirectional is that the absolute value of the ratio of the sum of the piezoelectric sensitivities to strain in a first direction and a second direction normal to each other to the piezoelectric sensitivities to strain in the first direction (either abs((S X +S Y )/S X ) or in mathematical notation) is less than 10%, preferably 5%, more preferably 2%, even more preferably 1%, and most preferably 0.1%.
- the behavior of a thin piezoelectric element can be described as omnidirectional when, for all orientations in its plane of extension (which corresponds to its crystalline orientation in the massive single crystal from which it is derived), the ratios of a difference in sensitivities to deformation S x and S y respectively in a first direction and in a second direction normal to the first direction, both in the plane of extension, on the sensitivity S x (i.e. abs((S x -S Y )/S X ) or in mathematical notation) is less than 10%, preferably 5%, more preferably 2%, even more preferably 1%, and most preferably 0.1%.
- the thin element will be considered to actually exhibit omnidirectional behavior when the criterion on the value of abs((S x -S Y )/S X ) is verified for two first directions making an angle between them of between 30° and 60°, preferably between 40° and 50°.
- the method developed above to calculate a sensitivity to a deformation makes it possible to determine the crystalline orientations defined by the angles q 1 and q 2 having a perfectly unidirectional sensitivity: there exists a direction q 3 for which the ratio S Y /S X is perfectly zero, to the precision of the calculation.
- the same approach can be carried out for omnidirectional or bidirectional sensitivities.
- the method explained above focused on the deformation applied to a thin piezoelectric element, allows precisely to choose the crystalline orientations adapted to a desired behavior in response to a unidirectional deformation. This can be a unidirectional behavior, an omnidirectional behavior or a bidirectional behavior, depending on the practical applications envisaged.
- lithium tantalate LiTaO3 in monocrystalline form which belongs to the 3m space group.
- the method can be applied to all space groups of piezoelectric materials. Without the method being limited to it, other materials of interest can be mentioned: lithium niobate LiNbO3 (group 3m), lead magnesium niobate MgNb2(PbO3)3 (group P1), aluminum nitride AlN (group P6 3 mc), barium titanate BaTiO3, potassium niobate KNbO3 and lead titanate TiPbO3 (all three of the P4mm group).
- FIG. 1 a cross-sectional view of a SENS piezoelectric sensor based on a thin piezoelectric element PIEZO of extension plane chosen to exhibit a particular behavior, unidirectional, omnidirectional or bidirectional to a unidirectional deformation applied to it in its extension plane.
- the sensitivity behavior of the thin piezoelectric element is transferred to the sensor integrating this thin piezoelectric element.
- Such sensors can be particularly adapted to specific situations as illustrated by figures 10 to 12 commented below, but they can also be used in the context of more general applications, as will become apparent later.
- the SENS sensor comprises a flexible SH1 sheet on which the thin PIEZO element is fixed.
- the sheets are preferably made of flexible materials chosen according to the intended application, and may be, for example, made of metal, polyvinyl chloride (PVC), polyimide (PI), polyethylene terephthalate (PET), biaxially oriented polyethylene terephthalate (Mylar®) or a composite material of epoxy resin and glass fibers.
- the thin PIEZO element may be fixed to the SH1 sheet by means of a flexible adhesive such as an anisotropic conductive film (ACF) which also allows electrical contact as described in patent document FR 3 122 985.
- ACF anisotropic conductive film
- the SENS sensor may be fixed to a surface to be characterized by means of an adhesive, for example a cyanoacrylate glue or an epoxy resin.
- a charge amplifier C.AMP is also fixed on the sheet SH1 and functionally connected to two conductive layers EL1 and EL2 acting as electrodes, respectively formed on two opposite faces of the thin PIEZO element.
- the function of the charge amplifier is to produce a voltage corresponding to the charge applied at the input and which corresponds to the charge generated by the PIEZO element during its deformation, for the purposes of electronic processing of the generated electrical potential and to carry out an effective measurement of the deformation of the PIEZO element.
- a wire connection element such as a ribbon cord, is connected to the charge amplifier to connect the sensor to an external measuring device.
- the thin piezoelectric element PIEZO preferably has a thickness of less than 50 ⁇ m, more preferably less than 25 ⁇ m, even more preferably less than 10 ⁇ m.
- a ratio of the thickness of the PIEZO element to its dimension L X in a first direction of its extension plane, and/or of a dimension Ly in a second dimension of its extension plane normal to the Lx direction is less than 0.1, preferably less than 0.05, more preferably less than 0.01.
- the SH1 sheet and, where applicable, the SH2 sheet may have a thickness between 5 and 300 ⁇ m.
- the SENS piezoelectric sensor considered as a whole is sufficiently flexible to follow the deformations of the object to be characterized on which it is fixed.
- the practitioner will be able to decide for each application the characteristics of the thin piezoelectric element PIEZO, its support, and other elements such as the electrode layers or the means of making electrical contacts.
- a sensor based on a thin piezoelectric element with unidirectional behavior, and therefore with unidirectional behavior itself, can be used to characterize the deformation of a mechanical part subjected to deformations in multiple directions, but that we seek the component of these deformations in a particular direction. We can also know the expected direction of deformation of the mechanical part, and seek to characterize this expected deformation in particular.
- An advantage of a sensor based on an element with unidirectional behavior is not to measure the disturbances resulting from parasitic external forces to which the system could be exposed in its environment.
- a force F situation illustrated in (B)
- the load cell deforms and two of the four sensors are in a state of compression Comp while the other two are in a state of extension Ext.
- a thin piezoelectric element with omnidirectional behavior can be used when the mechanical part considered is subjected to radial deformation and/or if the deformation is the same in an axial direction and a transverse direction, for example a membrane subjected to a variation in acoustic pressure and whose deformation is to be characterized. illustrates such a situation, with a circular rigid armature ARM fixing the periphery of a MEM membrane which can be made to vibrate for example under the effect of an acoustic wave.
- the membrane can be made of a thin piezoelectric element deposited on a flexible support.
- a thin piezoelectric element with bidirectional behavior can be used for example when a cylindrical beam BEAM is subjected at its ends to a couple of forces opposite to each other F T+ and F T- about the longitudinal axis of the beam (torsion).
- each point on the surface of the beam simultaneously undergoes a compression Comp in a first direction and an extension Ext in a second direction normal to the first direction, as illustrated by the .
- placing a sensor equipped with a thin piezoelectric element with bidirectional behavior with its x and y axes respectively aligned with the compression direction and the extension direction is suitable for efficient detection of the deformation, which makes it possible to trace the force torque undergone by the beam by means of a single sensor.
- the senor can be sensitive to both directions of deformation provided that it is adequately positioned on the cylindrical beam.
- two resistive strain gauges would be necessary due to their largely unidirectional sensitivity.
- the flexibility of the thin piezoelectric element is advantageously exploited to fix the whole of one of its faces in intimate contact with the curved surface of the mechanical part studied.
- the deformability provided by the flexibility of the thin piezoelectric element is particularly used.
- FIG. 13, 14 and 15 illustrate several possible configurations for sensors combining thin piezoelectric elements with unidirectional behavior in a direction Sens_Dir specific to each element.
- Each of these sensors has a structure similar to that of the SENS sensor illustrated by the , the thin piezoelectric elements of these sensors sharing the same support Supp on which they are placed, support possibly formed of the flexible SH1 sheet of the SENS sensor.
- each of the thin elements can be connected to a dedicated amplifier as in the SENS sensor described above, possibly integrated on the support Supp.
- the amplifier can be a charge amplifier.
- a sensor SENS_1 comprising two thin piezoelectric elements PIEZO_0° and PIEZO_90° fixed on a same support Supp and having their respective directions Sens_Dir oriented at 90° to each other.
- This example illustrates a configuration with two thin piezoelectric elements having a specific orientation relative to each other, but the invention is not limited to this particular configuration, and the number and respective orientations of the thin piezoelectric elements are not limited to this particular configuration and can be adapted to the requirements of any application, as decided by the practitioner.
- SENS_2 sensor comprising three thin piezoelectric elements PIEZO_0°, PIEZO_90° and PIEZO_45° fixed on the same support Supp, the directions Sens_Dir of PIEZO_90° and PIEZO_45° being respectively inclined by 90° and 45° relative to the direction Sens_Dir of PIEZO_0°.
- the three thin piezoelectric elements each satisfy the characteristic abs(Sy/Sx) ⁇ 0.1, i.e. they exhibit unidirectional behavior.
- SENS_3 sensor comprising three thin piezoelectric elements PIEZO_0°, PIEZO_120° and PIEZO_240° fixed on the same support Supp, the directions Sens_Dir of PIEZO_120° and PIEZO_240° being respectively inclined by 120° and 240° relative to the direction Sens_Dir of PIEZO_0°. Furthermore, the three thin piezoelectric elements each satisfy the characteristic abs(Sy/Sx) ⁇ 0.1, i.e. they exhibit unidirectional behavior.
- the SENS_2 and SENS_3 sensor configurations implement the known principle of combining resistive strain gauges (see ) so as to form what are called strain gauge rosettes, which make it possible to characterize the deformation of the surface of a mechanical part even when this deformation is not unidirectional. If the principle of placing the thin elements in order to efficiently trace measurements back to the components of the deformation is known, the replacement of the resistive gauges having excellent directivity by the thin piezoelectric elements with unidirectional behavior according to the invention makes it possible to obtain a sensitivity to deformation that is usually unattainable for comparable applications. This replacement is made possible by the determination of specific crystalline orientations which give the thin piezoelectric elements according to the invention a unidirectional behavior.
- One possibility of using the thin piezoelectric elements according to the invention is their coupling, i.e. configuring them in such a way that the electrical charges generated by at least two piezoelectric elements during their use are added together, for example by electrically connecting their respective electrodes.
- One application may be the correction of their directionality errors.
- the output of the resulting sensor called “combined sensor” will be the sum of the electrical charges generated by the two sensors.
- the advantage is that the coupling thus achieved in the combined sensor compensates for the maximum directionality error of 10% of each of the two elementary sensors taken individually: the combined sensor will be perfectly omnidirectional.
- the same principle can be applied to other systems, for example to several imperfectly unidirectional elementary sensors to obtain a perfectly directional combined sensor, the elementary sensors being able to be of different sizes and of relative orientations determined so as to correct the imperfections of directionality of these sensors.
- FIG. 1 a perspective view of a first application example with a ring R instrumented by three SENS sensors according to the invention. These sensors are preferably of the unidirectional or omnidirectional type.
- This instrumentation of the ring allows it to be transformed into a human/machine interface in order to control, for example, an electronic device such as a computer, a smartphone, a television or a multimedia player.
- an electronic device such as a computer, a smartphone, a television or a multimedia player.
- Three SENS piezoelectric deformation sensors are glued to the ring, which integrates the EL electronic equipment and possibly the energy source necessary to measure the electrical charges generated by the sensors, analyze them, and send the information wirelessly to an external device such as those mentioned above.
- the following actions can thus be detected, and associated with predetermined actions, such as for example (i) a single press by pressure between the fingers associated with a validation action, (ii) a double press associated with a back-up action in a menu of an application controlled by the ring, and (iii) a rotation in one direction or the other associated with controlling scrolling up or down in a list or controlling the volume of a music player.
- predetermined actions such as for example (i) a single press by pressure between the fingers associated with a validation action, (ii) a double press associated with a back-up action in a menu of an application controlled by the ring, and (iii) a rotation in one direction or the other associated with controlling scrolling up or down in a list or controlling the volume of a music player.
- a first application of such a system addresses the problem that a smartphone can be damaged when it is subjected to too much deformation, which typically happens when it is placed in the back pocket of a pair of pants and the user sits down.
- the integration of one or more SENS sensors according to the invention in a smartphone makes it possible to measure the deformation of the phone continuously, and to warn the user using a visual or audible message when the deformation exceeds a predefined threshold beyond which the smartphone could be damaged.
- the SENS sensors are fixed on the RF rear face intended to cover the main body MB of the SMART smartphone and connected to the data processing system of the smartphone.
- the four sensors are arranged so as to measure the deformations in the two main axes (defined by the directions of the long and short sides of the smartphone), as well as the torques applied to the phone in all directions.
- the sensors are preferably unidirectional, with two sensors oriented parallel to a long side of the smartphone and two others oriented parallel to a short side of the smartphone.
- omnidirectional SENS sensors are used to detect and locate a press on the back of the phone, with a view to using the sensors as a human/machine interface.
- the signals measured by the four sensors are compared: the closer the press is to a sensor, the greater the deformation measured; the press can thus be detected and located using the four sensors.
- the following interactions of the user with his phone can be identified and associated with control actions: (i) single press, (ii) double press, (iii) pressing a key on a virtual touch keyboard located on the back of the smartphone, each key corresponding to a respective press zone on the back of the smartphone.
- a piezoelectric thin film according to the invention provided with its electrodes can be manufactured as described below.
- a so-called “piezoelectric on insulator” substrate or POI for Piezoelectric On Insulator in English terminology, a structure comprising a piezoelectric layer fixed on a substrate, a silicon oxide layer being interposed between these two layers) commercially available is used as a source of the piezoelectric thin film.
- This type of substrate can be obtained for any crystalline orientation and for any type of piezoelectric material.
- a first layer of platinum electrode 400 nm thick is deposited on the free surface of the piezoelectric thin layer by chemical vapor deposition (for example by PECVD for Plasma Enhanced Chemical Vapor Deposition).
- a glass support provided with a separation layer (for example a so-called “LTHC” layer for "Light to Heat Conversion release Coating") is temporarily bonded to the platinum electrode deposited in the first step, using a liquid polymerized by exposure to ultraviolet radiation, so as to form a glass-POI wafer.
- a separation layer for example a so-called “LTHC” layer for "Light to Heat Conversion release Coating”
- the glass-POI stack is thinned by mechanical grinding of the free face of the POI substrate until it reaches approximately the buried silicon oxide layer of the POI. Dry etching removes the remaining silicon and the oxide layer and selectively stops at the piezoelectric layer.
- a second 400 nm platinum electrode layer is then deposited on the exposed face of the piezoelectric thin layer by chemical vapor deposition.
- the stack consisting of the thin piezoelectric film between its two electrode layers is transferred and bonded to a final substrate.
- the glass support is then removed by peeling off at the separation layer (by laser irradiation in the case of an LTHC separation layer) used to peel off the polymerized liquid, leaving the thin piezoelectric stack and its electrode layers on its final substrate.
- a strain sensor or the behavior of such sensor as unidirectional, bidirectional, or omnidirectional is to say that such sensor incorporates a thin piezoelectric element whose sensitivity is unidirectional, bidirectional, or omnidirectional as defined in the description, respectively.
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- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (14)
- Élément mince piézoélectrique (PIEZO) monocristallin se présentant sous forme d’une plaque s’étendant dans un plan d’extension (xy) défini par une première direction (x) et une seconde direction (y) normale à la première direction, de dimensions (LX, LY) dans la première direction et la seconde direction chacune supérieures à 100 µm et d’épaisseur (LZ) inférieure à 50 µm, un rapport de l’épaisseur sur la dimension (LX) dans la première direction ou la dimension (Ly) dans la seconde direction étant inférieur à 0,1, l’élément piézoélectrique présentant une première sensibilité (Sx) à la déformation selon la première direction et une seconde sensibilité (Sy) à la déformation selon la seconde direction, une orientation cristalline de l’élément (PIEZO) étant telle que :
- abs(Sy/Sx) < 0,1, correspondant à une sensibilité dite « unidirectionnelle »,
- abs((Sy+Sx)/Sx) < 0,1, correspondant à une sensibilité dite « bidirectionnelle », ou
- pour au moins deux premières directions (x) du plan d’extension (xy) faisant entre elles un angle compris entre 30° et 60°, abs((Sx-Sy)/Sx) < 0,1, correspondant à une sensibilité dite « omnidirectionnelle ». - Élément mince piézoélectrique (PIEZO) selon la revendication 1, muni d’une paire de couches électriquement conductrices (EL1, EL2) situées respectivement sur deux faces opposées de l’élément mince piézoélectrique.
- Capteur (SENS, SENS_1, SENS-2, SENS_3) de déformation comprenant au moins un élément mince piézoélectrique (PIEZO) selon la revendication 1 ou 2, situé sur une feuille souple (SH1).
- Capteur (SENS, SENS_1, SENS-2, SENS_3) de déformation selon la revendication 3, le au moins un élément mince piézoélectrique étant encapsulé entre la feuille souple (SH1) et une autre feuille souple (SH2)
- Capteur (SENS, SENS_1, SENS-2, SENS_3) de déformation selon la revendication 3 ou 4, comprenant au moins un amplificateur de charge (C.AMP) connecté à l’au moins un élément mince piézoélectrique (PIEZO).
- Capteur (SENS, SENS_1, SENS-2, SENS_3) de déformation selon la revendication 5, l’au moins un amplificateur de charge (C.AMP) étant intégré sur la feuille souple (SH1).
- Capteur (SENS_1, SENS-2, SENS_3) de déformation selon l’une quelconque des revendications 3 ou 4, comprenant une pluralité d’éléments minces piézoélectriques (PIEZO_0°, PIEZO_90°, PIEZO_45°, PIEZO_120°, PIEZO_240°) selon la revendication 1 ou 2, orientés selon des directions différentes présentant au moins 30° d’écart entre elles.
- Capteur de déformation (SENS-2) selon la revendication 7, comprenant un premier (PIEZO_0°), un second (PIEZO_90°) et un troisième (PIEZO_45°) éléments minces piézoélectriques, chacun présentant la caractéristique abs(Sy/Sx) < 0,1, la première direction (x) du second élément mince piézoélectrique faisant un angle de 90° avec la première direction (x) du premier élément mince piézoélectrique, la première direction (x) du troisième élément mince piézoélectrique faisant un angle de 45° avec la première direction (x) du premier élément mince piézoélectrique.
- Capteur de déformation (SENS_3) selon la revendication 7, comprenant un premier (PIEZO_0°), un second (PIEZO_120°) et un troisième (PIEZO_240°) éléments minces piézoélectriques, chacun présentant la caractéristique abs(Sy/Sx) < 0,1, la première direction (x) du second élément mince piézoélectrique faisant un angle de 120° avec la première direction (x) du premier élément mince piézoélectrique, la première direction (x) du troisième élément mince piézoélectrique faisant un angle de 240° avec la première direction (x) du premier élément mince piézoélectrique.
- Capteur (SENS_1, SENS-2, SENS_3) de déformation selon l’une quelconque des revendications 7 à 9, comprenant une pluralité d’amplificateurs de charge (C.AMP) chacun reliés à l’un respectif des éléments piézoélectriques minces.
- Capteur combinant au moins deux capteurs selon l’une quelconque des revendication 3 à 6 connectés électriquement en parallèle.
- Un appareil muni d’au moins un des capteurs de déformation selon l’une quelconque des revendications 3 à 10 ou une combinaison de capteurs selon la revendication 11.
- Un appareil selon la revendication 12, l’appareil étant un anneau muni d’au moins deux capteurs de déformation de type unidirectionnel ou omnidirectionnel, l’anneau étant configuré pour servir d’interface homme/machine.
- Un appareil selon la revendication 12, l’appareil étant un smartphone équipé d’au moins un capteur de déformation et configuré pour avertir un utilisateur lorsqu’une déformation mesurée sur la base de signaux de l’au moins un capteur dépasse un seuil prédéterminé ou pour servir d’interface homme/machine.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FRFR2303635 | 2023-04-12 | ||
| FR2303635A FR3147863B1 (fr) | 2023-04-12 | 2023-04-12 | Dispositif piezoelectrique flexible de mesure de deformation, unidirectionnel, bidirectionel ou omnidirectionnel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2024213465A1 true WO2024213465A1 (fr) | 2024-10-17 |
Family
ID=87974107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2024/059205 Pending WO2024213465A1 (fr) | 2023-04-12 | 2024-04-04 | Dispositif piezoelectrique flexible de mesure de deformation, unidirectionnel, bidirectionel ou omnidirectionnel |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR3147863B1 (fr) |
| WO (1) | WO2024213465A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025214740A1 (fr) | 2024-04-08 | 2025-10-16 | Wormsensing | Capteur de deformation hybride combinant une jauge piezoelectrique et une jauge resistive |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4314481A (en) | 1978-12-22 | 1982-02-09 | Kistler Instruments Ag | Piezeolectric strain transducer |
| US20150068316A1 (en) * | 2012-03-05 | 2015-03-12 | Forschungszentrm Juelich Gmbh | Sensor arrangement comprising a carrier substrate and a ferroelectric layer and method for producing and using the sensor arrangement |
| US20210102850A1 (en) | 2017-05-29 | 2021-04-08 | Joong Ill Industrial Co., Ltd. | Piezoelectric sensor |
| EP3989299A1 (fr) * | 2020-10-26 | 2022-04-27 | Université de Franche-Comté | Dispositif piézo-électrique comprenant des films piézo-électriques linbo3 et/ou litao3 monocristallins flexibles intégrés sur un substrat flexible et procédés de fabrication associés |
| FR3122985A1 (fr) | 2021-05-18 | 2022-11-25 | Wormsensing | Capteur de vibration et dispositif pour la mesure de signaux vitaux periodiques emis par le corps humain ou animal |
-
2023
- 2023-04-12 FR FR2303635A patent/FR3147863B1/fr active Active
-
2024
- 2024-04-04 WO PCT/EP2024/059205 patent/WO2024213465A1/fr active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4314481A (en) | 1978-12-22 | 1982-02-09 | Kistler Instruments Ag | Piezeolectric strain transducer |
| US20150068316A1 (en) * | 2012-03-05 | 2015-03-12 | Forschungszentrm Juelich Gmbh | Sensor arrangement comprising a carrier substrate and a ferroelectric layer and method for producing and using the sensor arrangement |
| US20210102850A1 (en) | 2017-05-29 | 2021-04-08 | Joong Ill Industrial Co., Ltd. | Piezoelectric sensor |
| EP3989299A1 (fr) * | 2020-10-26 | 2022-04-27 | Université de Franche-Comté | Dispositif piézo-électrique comprenant des films piézo-électriques linbo3 et/ou litao3 monocristallins flexibles intégrés sur un substrat flexible et procédés de fabrication associés |
| FR3122985A1 (fr) | 2021-05-18 | 2022-11-25 | Wormsensing | Capteur de vibration et dispositif pour la mesure de signaux vitaux periodiques emis par le corps humain ou animal |
Non-Patent Citations (5)
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| "ANSI/IEEE Std", IEEE STANDARD ON PIEZOELECTRICITY, 1988, pages 176 - 1987 |
| FABIO L. M. DOS SANTOS: "GROUND VIBRATION TESTING OF AN F-16 AIRCRAF", INTERNATIONAL FORUM ON AEROELASTICITY AND STUCTURAL DYNAMICS, vol. 122, 2015 |
| W. YUEJ. YI-JIAN: "Crystal orientation dependence of piezoelectric properties in LiNbO3 and LiTaO3", OPT. MATER., vol. 23, July 2003 (2003-07-01), pages 403 - 408 |
| WILKIE, W. K. ET AL.: "Low-cost piezocomposite actuator for structural control applications", PROCEEDINGS OF THE SPIE, vol. 3991, 2000, pages 323 - 334, XP000952354, DOI: 10.1117/12.388175 |
| YUE W ET AL: "Crystal orientation dependence of piezoelectric properties in LiNbO"3 and LiTaO"3", OPTICAL MATERIALS, ELSEVIER SCIENCE PUBLISHERS B.V. AMSTERDAM, NL, vol. 23, no. 1-2, 1 July 2003 (2003-07-01), pages 403 - 408, XP004430699, ISSN: 0925-3467, DOI: 10.1016/S0925-3467(02)00328-2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025214740A1 (fr) | 2024-04-08 | 2025-10-16 | Wormsensing | Capteur de deformation hybride combinant une jauge piezoelectrique et une jauge resistive |
Also Published As
| Publication number | Publication date |
|---|---|
| FR3147863A1 (fr) | 2024-10-18 |
| FR3147863B1 (fr) | 2025-11-07 |
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