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WO2024211129A1 - Dépôt par pulvérisation d'un film composite ayant une uniformité de composition - Google Patents

Dépôt par pulvérisation d'un film composite ayant une uniformité de composition Download PDF

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Publication number
WO2024211129A1
WO2024211129A1 PCT/US2024/021548 US2024021548W WO2024211129A1 WO 2024211129 A1 WO2024211129 A1 WO 2024211129A1 US 2024021548 W US2024021548 W US 2024021548W WO 2024211129 A1 WO2024211129 A1 WO 2024211129A1
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WIPO (PCT)
Prior art keywords
element material
sputtering
sputtering gas
target
emission
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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PCT/US2024/021548
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English (en)
Inventor
Terry Bluck
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Applied Materials Inc
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Applied Materials Inc
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Filing date
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Publication of WO2024211129A1 publication Critical patent/WO2024211129A1/fr
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

Definitions

  • Embodiments of the present disclosure generally relate to physical vapor deposition (PVD) film formation on substrates in an electronic device fabrication process, and more particularly, to methods and systems for improving compositional uniformity in a deposited composite film.
  • PVD physical vapor deposition
  • Electronic device fabrication processes today often involve the use of a sputter deposition process in a physical vapor deposition (PVD) chamber.
  • PVD physical vapor deposition
  • magnetic films on a hard disk having multiple elements such as boron (B), chromium (Cr), cobalt (Co), and platinum (Pt)
  • B boron
  • Cr chromium
  • Co cobalt
  • Pt platinum
  • a composite film that is sputter deposited from such a composite target not only has a thickness nonuniformity but also a compositional non-uniform ity over the angle.
  • Embodiments of the present disclosure provide a method of sputter deposition of a composite film in a physical vapor deposition (PVD) chamber.
  • the method includes computing mixture rates of a first sputtering gas and a second sputtering gas in a mixture of the first sputtering gas and the second sputtering gas, such that emission of a light element material and emission of a heavy element material from a composite target including the light element material and the heavy element material are substantially the same in a sputtering process using the mixture of the first sputtering gas and the second sputtering gas, and performing a co-sputter deposition process, including sputtering the light element material and the heavy element material onto a substrate from the composite target using the mixture of the first sputtering gas and the second sputtering gas, wherein the light element material has a lower molecular weight than the heavy element material.
  • Embodiments of the present disclosure also provide a physical vapor deposition (PVD) chamber.
  • the PVD chamber includes a pedestal disposed within a processing region of the PVD chamber, the pedestal having a substrate supporting surface that is configured to support a substrate thereon, a motor coupled to the pedestal, the motor configured to rotate the pedestal about a central axis of the pedestal, a lid assembly including a composite target including a light element material and a heavy element material, and a system controller configured to control gas flow of a mixture of a first sputter gas and a second sputter gas at pre-computed mixture rates, a voltage bias applied to the composite target, and a sputtering pressure within the PVD chamber in a co-sputter deposition process, such that emission of the light element material and emission of the heavy element material are substantially the same in a sputtering process using the mixture of the first sputtering gas and the second sputtering gas.
  • Embodiments of the present disclosure further provide a physical vapor deposition (PVD) chamber.
  • the PVD chamber includes a pedestal disposed within a processing region of the PVD chamber, the pedestal having a substrate supporting surface that is configured to support a substrate thereon, a motor coupled to the pedestal, the motor configured to rotate the pedestal about a central axis of the pedestal, a lid assembly including a composite target including a light element material and a heavy element material, and a computer readable medium storing instructions that when executed by a processor of a system that includes the PVD chamber, cause the system to perform operations including simultaneously controlling gas flow of a mixture of a first sputter gas and a second sputter gas at pre-computed mixture rates, a voltage bias applied to the composite target, and a sputtering pressure within the PVD chamber in a co-sputter deposition process, such that emission of the light element material and emission of the heavy element material are substantially the same in a sputtering process using the mixture of the
  • Figure 1 is a schematic top view of an exemplary processing system, according to certain embodiments.
  • Figures 2A and 2B are a side cross-sectional view and an enlarged top cross-sectional view of a PVD chamber that may be used in the processing system of Figure 1 , according to certain embodiments.
  • Figures 2C and 2D are enlarged side cross-sectional views of a portion of the PVD chamber shown in Figures 2A and 2B.
  • Figure 3 is a process flow diagram illustrating a method of sputter depositing a composite film on a substrate using a PVD chamber, according to certain embodiments.
  • Figure 4A, 4B, and 4C illustrate exemplary emission functions of target material from a target.
  • Figures 5A, 5B, and 5C illustrate exemplary emissions of target material from a target.
  • Embodiments of the disclosure provided herein generally relate to sputter depositing a composite film in a physical vapor deposition (PVD) chamber. More particularly, embodiments described herein provide methods and systems for improving compositional uniformity in a deposited composite film. The methods are particularly useful for sputter depositing a composite film that includes elements that have different angular distributions of emitted materials. The difference in the angular distributions is compensated by using a gas mixture of two or more sputtering gases. Thus, a resulting composite film has improved compositional uniformity.
  • PVD physical vapor deposition
  • the number of parameters such as gas flow of a mixture of a first sputtering gas and a second sputtering gas at computed mixture rates, a negative bias voltage to apply to a composite target, and sputtering pressure, may be adjusted to achieve desired thickness uniformity and compositional uniformity.
  • FIG. 1 is a schematic top view of an exemplary processing system 100, according to certain embodiments.
  • the substrate is a silicon or other semiconductor substrate, or an interposer such as an organic material containing interposer or glass interposer.
  • the processing system 100 generally includes an equipment front-end module (EFEM) 102 for loading substrates into the processing system 100, a first load lock chamber 104 coupled to the EFEM 102, a transfer chamber 106 coupled to the first load lock chamber 104, a first dedicated degas chamber 108, a first pre-clean chamber 110, a first deposition chamber 112, a second pre-clean chamber 114, a second deposition chamber 116, a second dedicated degas chamber 118, and a second load lock chamber 120.
  • EFEM equipment front-end module
  • the EFEM 102 generally includes one or more robots 122 that are configured to transfer substrates from front opening unified pods (FOUPs) 124 to at least one of the first load lock chamber 104 or the second load lock chamber 120.
  • the transfer chamber 106 and each chamber coupled to the transfer chamber 106 are maintained at a vacuum state.
  • vacuum may refer to pressures less than 760 Torr, such as pressures near 10’ 5 Torr (/.e., ⁇ 10 -3 Pa). However, some high-vacuum systems may operate below near 10’ 7 Torr (/. e. , ⁇ 1 O’ 5 Pa).
  • the vacuum is created using a rough pump and/or a turbomolecular pump (not shown) coupled to the transfer chamber 106 and to each of the one or more process chambers (e.g., process chambers 108-118).
  • a rough pump and/or a turbomolecular pump (not shown) coupled to the transfer chamber 106 and to each of the one or more process chambers (e.g., process chambers 108-118).
  • a turbomolecular pump not shown
  • other types of vacuum pumps are also contemplated.
  • substrates are loaded into the processing system 100 through a door (not shown) in the first load lock chamber 104 and unloaded from the processing system 100 through a door in the second load lock chamber 120.
  • a stack of substrates is supported in cassettes (not shown) disposed in the FOUPs 124, and are transferred therefrom by the robot 122 to the first load lock chamber 104. Once vacuum is pulled in the first load lock chamber 104, one substrate at a time is retrieved from the first load lock chamber 104 using a robot 126 located in the transfer chamber 106.
  • a cassette is disposed within the first load lock chamber 104 and/or the second load lock chamber 120 to allow multiple substrates to be stacked and retained therein before being received by the robot 126 in the transfer chamber 106 or the robot 122 in the EFEM 102.
  • other loading and unloading configurations are also contemplated.
  • first pre-clean chamber 110 and the second pre-clean chamber 114 are inductively coupled plasma (ICP) chambers for etching the substrate surface.
  • ICP inductively coupled plasma
  • one or both of the pre-clean chambers are replaced with a film deposition chamber that is configured to perform a PVD, chemical vapor deposition (CVD), or atomic layer deposition (ALD) process, such as deposition of silicon nitride.
  • a film deposition chamber that is configured to perform a PVD, chemical vapor deposition (CVD), or atomic layer deposition (ALD) process, such as deposition of silicon nitride.
  • the first deposition chamber 112 and the second deposition chamber 116 are PVD chambers.
  • Figures 2A and 2B are a side cross-sectional view and an enlarged top cross-sectional view of a PVD chamber 200, respectively, that may be used in the processing system 100 of Figure 1 , e.g., the first deposition chamber 112 and the second deposition chamber 116, according to certain embodiments.
  • Figures 2C and 2D are enlarged side cross-sectional views of a portion of the PVD chamber 200.
  • the PVD chamber 200 generally includes a chamber body 202, a lid assembly 204 coupled to the chamber body 202, an optional magnetic confinement adapter 206 coupled to the lid assembly 204, a first magnetron 208 coupled to the lid assembly 204, an optional magnetic confinement adapter 210 coupled to the lid assembly 204, a second magnetron 212 coupled to the lid assembly 204, a pedestal 214 disposed within the chamber body 202, a first target 216 disposed between the first magnetron 208 and the pedestal 214, and an optional second target 218 disposed between the second magnetron 212 and the pedestal 214.
  • a processing region 220 of the PVD chamber 200 is maintained at a controlled low sputtering pressure of between about l O mTorr and about 180 mTorr.
  • the processing region 220 is generally defined by the chamber body 202 and the lid assembly 204, such that the processing region 220 is primarily disposed between the first target 216, the second target 218, and a substrate supporting surface 222 of the pedestal 214.
  • the pedestal 214 is coupled to a pedestal shaft 224 and may be continuously rotated about a central axis of the pedestal 214 in relation to the first target 216 and the second target 218, by a motor 226 coupled to the pedestal shaft 224, to improve film deposition uniformity.
  • the motor 226 is an electric servo motor that may be raised and lowered by a separate motor 228.
  • the motor 228 may be an electrically powered linear actuator.
  • a bellows 230 surrounds the pedestal shaft 224 and forms a seal between the chamber body 202 and the motor 226 during raising and lowering of the pedestal 214.
  • the pedestal 214 may be rotated about a central axis 232 of the PVD chamber 200.
  • a power source 234 is electrically connected to the first target 216 to apply a negatively biased voltage of between about 10 V and about 5000 V, for example, about 500 V, to the first target 216.
  • a power source 236 is electrically connected to the second target 218 to apply a negatively biased voltage of between about 10 V and about 5000 V, for example, about 500 V, to the second target 218.
  • the power source 234 is either a straight DC mode source or a pulsed DC mode source, and the power source 236 is either a straight DC mode source or a pulsed DC mode source.
  • RF radio frequency
  • the power source 234 and the power source 236 may be independently or jointly controlled, such as by a system controller 238.
  • the first target 216 includes a target material 216M and a backing plate 240, and is part of the lid assembly 204. An underside surface of the target material the processing region 220.
  • the backing plate 240 is disposed between the first magnetron 208 and the target material 216M of the first target 216.
  • the target material 216M is bonded to the backing plate 240.
  • the backing plate 240 is an integral part of the first target 216 and thus for simplicity of discussion the pair may be referred to collectively as the “target.”
  • the second target 218 includes a target material 218M and a backing plate 242, and is part of the lid assembly 204.
  • An underside surface of the target material 218M of the second target 218 (referred to as a “target surface”) defines a portion of the processing region 220.
  • the backing plate 240 and the backing plate 242 are electrically insulated from a support plate 244 of the lid assembly 204 by use of a support, which may include an electrical insulator 246 and a shield 248.
  • the electrical insulator 246 prevents an electrical short from being created between the backing plates 240, 242 and the support plate 244 of the grounded lid assembly 204.
  • the shield 248 is coupled to the support plate 244. The shield 248 prevents material sputtered from the first target 216 and the second target 218 from depositing target material on the support plate 244.
  • the backing plate 240 has one or more cooling channels 250 configured to receive a coolant (e.g., DI water) therethrough to cool or control the temperature of the first target 216.
  • a coolant e.g., DI water
  • the cooling channels 250 may be interconnected and/or form a serpentine path through the body of the backing plate 240.
  • the backing plate 242 may have one or more cooling channels 252.
  • the first magnetron 208 and the first target 216 which includes the target material 216M and backing plate 240, each have a triangular or delta shape, such that a lateral edge of the first target 216 includes three corners (e.g., three rounded corners shown in Figure 2B).
  • the first target 216 is oriented such that a tip of a corner of the triangular or delta shaped target is at or adjacent to the central axis 232 of the PVD chamber 200.
  • the surface area of the first target 216 is less than the surface area of the substrate W.
  • a surface area of the upper surface of the pedestal 214 is greater than a surface area of the front surface of the first target 216. In some embodiments, the ratio of the surface areas of the front surface of the first target 216 to the deposition surface of the substrate W (e.g., upper surface of the substrate) is between about 0.1 and about 0.4.
  • the second magnetron 212 and the second target 218 may also each have a triangular or delta shape.
  • the first magnetron 208 may have the same dimensions, shape, or both as the second magnetron 212
  • the first target 216 may have the same dimensions, shape, or both as the second target 218.
  • the first magnetron 208 and the second magnetron 212 may have different dimensions, different shape, or both.
  • the first target 216 may have different dimensions, different shape, or both, from the second target 218.
  • the first magnetron 208 and the second magnetron 212 are disposed over a portion of the first target 216 and the second target 218, respectively, and in a region of the lid assembly 204 that is maintained at atmospheric pressure.
  • the first magnetron 208 includes a magnet plate 254 and permanent magnets (not shown) attached to the magnet plate 254.
  • the second magnetron 212 includes a magnet plate 256 and permanent magnets (not shown) attached to the magnet plate 256.
  • the magnet plate 254 and the magnet plate 256 have triangular or delta shapes with three comers.
  • the magnets of the magnet plate 254 and the magnet plate 256 are permanent magnets arranged in one or more closed loops.
  • Each of the one or more closed loops will include magnets that are positioned and oriented relative to their pole (/.e., north (N) and south (S) poles) so that a magnetic field spans from one loop to the next or between different portions of a loop.
  • the sizes, shapes, magnetic field strength and distribution of the individual magnets are generally selected to create a desirable erosion pattern across the surface of the first target 216 and the second target 218 when used in combination with oscillation of the first magnetron 208 and the second magnetron 212.
  • the first magnetron 208, the second magnetron 212, or both may include electromagnets in place of the permanent magnets.
  • a clamp 258 is used to hold the substrate W on the substrate supporting surface 222.
  • the clamp 258 operates mechanically.
  • the weight of the clamp 258 may hold the substrate W in place.
  • the clamp 258 is lifted by pins (not shown) that are movable relative to the pedestal 214 to contact an underside of the clamp 258.
  • the backside of the substrate W is in contact with the substrate supporting surface 222 of the pedestal 214.
  • the entire backside of the substrate W may be in electrical and thermal contact with the substrate supporting surface 222 of the pedestal 214.
  • the temperature of the substrate W may be controlled using a temperature control system 260.
  • the temperature control system 260 has an external cooling source that supplies coolant to the pedestal 214.
  • the external cooling source is configured to deliver a cryogenically cooled fluid (e.g., Galden®) to heat exchanging elements (e.g., coolant flow paths) within a substrate supporting portion of the pedestal 214 that is adjacent to the substrate supporting surface 222, in order to control the temperature of the substrate to a temperature that is less than 20 °C, such as less than 0 °C, such as about -20 °C or less.
  • the temperature control system 260 includes a heat exchanger and/or backside gas flow within the pedestal 214.
  • the cooling source may be replaced or augmented with a heating source to increase the substrate temperature independent of the heat generated during the sputtering process.
  • an RF bias source 264 is electrically coupled to the pedestal 214 to bias the substrate W during the sputtering process.
  • the pedestal 214 may be grounded, floated, or biased with only a DC voltage source. Biasing the substrate W can improve film density, adhesion, and material reactivity on the substrate surface.
  • the pedestal shaft 224 is coupled to an underside of the pedestal 214.
  • a rotary union 262 is coupled to a lower end of the pedestal shaft 224 to provide rotary fluid coupling with the temperature control system 260 and rotary electrical coupling with the RF bias source 264.
  • a copper tube is disposed through the pedestal shaft 224 to couple both fluids and electricity to the pedestal 214.
  • the rotary union 262 includes a magnetic liquid rotary sealing mechanism (also referred to as a “Ferrofluidic® seal”) for vacuum rotary feedthrough.
  • the substrate W is a square or rectangular panel.
  • the substrate supporting surface 222 of the pedestal 214 fits a single square or rectangular panel substrate having sides of about 500 mm or greater, such as 510 mm by 515 mm or 600 mm by 600 mm.
  • apparatus and methods of the present disclosure may be implemented with many different types and sizes of substrates.
  • the underside surface of the first target 216 faces towards the substrate supporting surface 222 of the pedestal 214 and towards a front side of the substrate W.
  • the underside surface of the second target 218 (referred to as the target surface) also faces towards the substrate supporting surface 222 of the pedestal 214 and towards a front side of the substrate W.
  • the underside surface of the first target 216 faces away from the backing plate 240, which faces towards the atmospheric region or external region of the PVD chamber 200.
  • the underside surface of the second target 218 faces away from the backing plate 242, which faces towards the atmospheric region or external region of the PVD chamber 200.
  • a plane that is parallel to the underside of the first target 216 is tilted in relation to an upper surface of the support plate 244 by a first angle as shown in Figure 2A.
  • the plane of the first target 216 is tilted in relation to a plane of the substrate supporting surface 222 of the pedestal 214 and, thus, in relation to the front side of the substrate W.
  • the first target 216 may also be referred to as being tilted relative to the pedestal 214, and vice versa.
  • the angle is about 2° to about 10°, such as about 3° to about 5°. As shown in Figure 2A, the angle is about 4°.
  • the first target 216 is tilted downward in a direction from an inner radial edge 216C of the first target 216 to an outer radial edge 216A of the first target 216.
  • the inner radial edge 216C is farther from the substrate supporting surface 222 of the pedestal 214 (e.g., vertically) compared to the outer radial edge 216A.
  • the first target 216 includes an edge that includes three corners, and one of the three comers, which is coincident with the inner radial edge 216C, is positioned farther from the upper surface of the pedestal 214 as compared to each of the two other comers due to the formed tilt angle.
  • the above description for first target 216 may be applied to the second target 218 relative to a plane of the substrate supporting surface 222 of the pedestal 214 and, thus, in relation to the front side of the substrate W.
  • the pedestal 214 is substantially horizontal, or parallel to the x-y plane, whereas the first target 216 and the second target 218 are not horizontal, or tilted in relation to the x-y plane.
  • other non-horizontal orientations of the pedestal 214 are also contemplated.
  • the magnetic confinement adapter 206 is coupled to the lid assembly 204.
  • the magnetic confinement adapter 206 is generally cylindrically shaped, enclosing a volume that is disposed below the first target 216 and the first magnetron 208 and above the substrate supporting surface 222 of pedestal 214, including at least a portion of the processing region 220.
  • the magnetic confinement adapter 210 is also coupled to the lid assembly 204.
  • the magnetic confinement adapter 210 is also generally cylindrically shaped, enclosing a volume that is disposed below the second target 218 and second magnetron 212 and above the substrate supporting surface 222 of the pedestal 214, including at least a portion of the processing region 220.
  • the magnetic confinement adapter 206 and the magnetic confinement adapter 210 each have cooling channels (not shown) configured to receive a coolant (e.g., DI water) therethrough to cool or control the temperature of the magnetic confinement adapter 206 and the magnetic confinement adapter 210.
  • a coolant e.g., DI water
  • the cooling channels may be interconnected and/or form a serpentine path through the magnetic confinement adapter 206.
  • the cooling channels may be interconnected and/or form a serpentine path through the magnetic confinement adapter 210.
  • the system controller 238 may control the operation of the PVD chamber 200 using direct control of the power source 234, the first magnetron 208, the second magnetron 212, the magnetic confinement adapter 206, cooling of the magnetic confinement adapter 206, the magnetic confinement adapter 210, cooling of the magnetic confinement adapter 210, the pedestal 214, cooling of the backing plate 240, the temperature control system 260, and/or the RF bias source 264, or using indirect control of other controllers associated therewith.
  • the system controller 238 enables data acquisition and feedback from the respective components to coordinate processing in the PVD chamber 200.
  • the system controller 238 includes a programmable central processing unit (CPU) 266, which is operable with a memory 268 (e.g., non-volatile memory) and support circuits 270.
  • the support circuits 270 e.g., cache, clock circuits, input/output subsystems, power supplies, etc., and combinations thereof) are conventionally coupled to the CPU 266 and coupled to the various components of the PVD chamber 200.
  • the CPU 266 is one of any form of general purpose computer processor used in an industrial setting, such as a programmable logic controller (PLC), for controlling various monitoring system components and subprocessors.
  • the memory 268, coupled to the CPU 266, is non-transitory and is typically one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk drive, hard disk, or any other form of digital storage, local or remote.
  • the memory 268 is in the form of a computer-readable storage media containing instructions (e.g., non-volatile memory), that when executed by the CPU 266, facilitates the operation of the PVD chamber 200.
  • the instructions in the memory 268 are in the form of a program product such as a program that implements the methods of the present disclosure (e.g., middleware application, equipment software application, etc.).
  • the program code may conform to any one of a number of different programming languages.
  • the methods of the present disclosure may be implemented as a program product stored on computer-readable storage media for use with a computer system.
  • the program(s) of the program product define functions of the embodiments (including the methods described herein).
  • Illustrative computer-readable storage media include, but are not limited to: (i) non-writable storage media (e.g., read-only memory devices within a computer such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips or any type of solid-state non-volatile semiconductor memory) on which information is permanently stored; and (ii) writable storage media (e.g., floppy disks within a diskette drive or hard-disk drive or any type of solid-state random-access semiconductor memory) on which alterable information is stored.
  • non-writable storage media e.g., read-only memory devices within a computer such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips or any type of solid-state non-volatile semiconductor memory
  • writable storage media e.g., floppy disks within a diskette drive or hard-disk drive or any type of solid-state random-access semiconductor memory
  • the PVD chamber 200 is evacuated, back filled with sputtering gas, and maintained at a controlled low sputtering pressure (e.g., below about 10 mTorr) by a vacuum pump (not shown).
  • a target e.g., the first target 216 or the second target 2178 is negatively biased.
  • An induced electric filed inside the chamber body 202 acts to attract sputtering gas ions to the target surface, which by ion bombardment generates primary electrons that enable a high-density plasma to be generated and sustained near the target surface.
  • the plasma is concentrated near the target surface due to the magnetic field produced by the magnetron (e.g., the first magnetron 208 or the second magnetron 212).
  • the magnetic field forms a closed-loop annular path acting as an electron trap that reshapes the trajectories of secondary electrons ejected from the target surface into a cycloidal path, greatly increasing the probability of ionization of the sputtering gas within a confinement zone.
  • the sputtering gas ions strike the target surface and eject atoms of the target material from the target, which are accelerated towards a substrate surface and deposited on the substrate surface.
  • the sputtering gas ions then become neutral at the target surface and rebound towards the substrate surface with an energy of about a few eV.
  • Inert gases such as helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe) are usually employed as the sputtering gas because they tend not to react with the target material or combine with any process gases and because they produce higher sputtering and deposition rates due to their relatively high molecular weight.
  • a reactive gas e.g., oxygen (O2), nitrogen (N2)
  • O2 oxygen
  • N2 nitrogen
  • the system controller 238 can control the first magnetron 208, the magnetic confinement adapter 206, or both, according to a first sputtering profile to affect the properties of the plasma associated with first target 216.
  • the system controller 238 can control the second magnetron 212, the magnetic confinement adapter 210, or both, according to a second sputtering profile to affect the properties of the plasma associated with second target 218.
  • Sputtering yield of a target depends on a negative voltage applied to the target and on a sputtering pressure, and thus the negative voltage and the sputtering pressure are controlled to achieve a desired sputtering yield.
  • the system control 238 can control negative voltages to apply to the first target 216 and the second target 218, a sputtering pressure, the deposition angle, and angular distributions of sputtered material ejected from first target 216 and sputtered material of material ejected from the second target 218.
  • FIG 3 is a process flow diagram illustrating a method 300 of sputter depositing a composite film on a substrate using a mixture of sputtering gases in a PVD chamber, according to certain embodiments.
  • the PVD chamber may be the PVD chamber 200 shown in Figures 2A and 2B.
  • a composite film may include two or more elements, one of which (referred to as a “light element”) has a lower molecular weight than the other element(s) (referred to as a “heavy element”).
  • a molecular weight ratio of the light element to the heavy element may be 1 :2 or less.
  • the mixture of sputtering gases may include a first sputtering gas and a second sputtering gas.
  • the light element material and the heavy element material may be any combination of two elements selected from cobalt (Co), platinum (Pt), boron (B), and zirconium (Zr).
  • the first and second sputtering gases may be inert gases including helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).
  • the method 300 is applicable for sputter depositing a composite film including more than two elements and/or using a mixture of more than two sputtering gases.
  • the method begins with block 310, in which emission functions of light element material and heavy element material from a composite target formed of the light element material and the second material are computed.
  • emission functions of light element material and heavy element material from a composite target formed of the light element material and the second material are computed.
  • an emission function 1L (0) of the light element material and an emission function 1 H (0) of the heavy element material in a sputtering process using a first sputtering gas e.g., argon (Ar)
  • an emission function 2L (0) of the light element material and an emission function 2H (0) °f the heavy element material in a sputtering process using a second sputtering gas e.g. , neon (Ne)
  • the polar angle 0 relative to the normal direction to an underside surface of the target material 216M of the first target 216 (referred to as a “target surface”) is shown in Figure 2C.
  • n is an adjustable parameter determined by the sputter gas ion molecular weight (M , molecular weight (M e ), atomic number (Z), and surface binding energy (E s ) (which depends on the sublimation energy) of the target material, as
  • n is less influenced by a change of the value of the sputter gas ion molecular weight for a heavier element (having a larger molecular weight M e ) than for a lighter element (having a smaller molecular weight M e ).
  • the angular distributions of the heavy element material do not vary as much as the angular distribution of the light element material.
  • the emission functions (0) cos 11 0 of boron (B) and lead (Pb) are shown in Figures 4A, 4B, and 4C.
  • the sputtering gases are neon (Ne), argon (Ar), and krypton (Kr) in Figures 4A, 4B, and 4C, respectively.
  • the parameters, the sputter gas ion molecular weight (MJ, the molecular weight (M e ), the atomic number (Z), and the surface binding energy (E s ) of the target material are set as shown in Table I to evaluate the emission functions shown in Figures 4A, 4B, and 4C.
  • Figures 4A, 4B, and 4C are different from one another, since the values of and n vary for neon (Ne), argon (Ar), and krypton (Kr).
  • a difference between total emission of the light element material and total emission of the heavy element material at the polar angle 0 of between 0 degree and 4.5 degrees may be less than about 0.02%.
  • the mixture rates can be determined such that deficiency or surfeit in emission of the light element material for the first sputtering gas is compensated by mixing the second sputtering gas with the first sputtering gas, while emission of the heavy element material remains substantially the same.
  • the mixture rates of argon (Ar) and neon (Ne) are determined such that total emission of boron (B) by argon (Ar) and neon (Ne) is the same as emission of Pb (PB) (9.02%) at the polar angle 0 of between 0 degree and 4.5 degrees.
  • a substrate is disposed on a pedestal (e.g., the pedestal 214 shown in Figure 1 ) that is configured to support a substrate W thereon.
  • the pedestal is disposed within a processing region of the PVD chamber.
  • the PVD chamber includes a composite target (e.g., the first target 216 shown in Figures 2A and 2B).
  • the composite target is formed of the light element material and the heavy element material.
  • the substrate W may be at a distance of between about 50 mm and about 300 mm from the composite target.
  • a co-sputter deposition process is performed to co-sputter the light element material and the heavy element material from the composite target onto the substrate W using the mixture of the first sputtering gas and the second sputtering gas at the computed mixture rates, while the substrate W is rotated about a central axis of the pedestal.
  • the substrate W may be rotated also about a central axis of the PVD chamber.
  • the composite target is negatively biased by a power source (e.g., the power source 234 shown in Figures 2A and 2B).
  • the co-sputter deposition process is a reactive sputtering process in which a reactive gas (e.g., oxygen (O2), nitrogen (N2)) is additionally used.
  • a reactive gas e.g., oxygen (O2), nitrogen (N2)
  • O2 oxygen
  • N2 nitrogen
  • the composite target erodes as the target material (the light element material and the heavy element material) is sputtered, and thus the target surface (accordingly the normal direction to the target surface) changes over time, as shown in Figure 2D.
  • This change of the target surface changes angular distributions of emitted target material relative to the normal direction to a surface of the substrate W.
  • the mixture rates R 1 and R 2 of the first sputtering gas and the second sputtering gas are re-computed such that emission of the light element material and emission of the heavy element material are substantially the same at the same angle to the normal direction to the surface of the substrate W (/.e., a changing polar angle 0 to the normal direction to the changing target surface) over time.
  • the number of parameters such as gas flow of a mixture of the first sputtering gas and the second sputtering gas at the computed mixture rates, a negative bias voltage to apply to the composite target, and sputtering pressure in the PVD chamber, are controlled such that a deposited film has a thickness of between about 1 nm and about 250 nm per layer with thickness non-uniform ity less than ⁇ 3 % and compositional non-uniformity less than ⁇ 2 % over the deposited composite film.
  • the methods and the system for sputter depositing a composite film having reduced compositional uniformity are provided.
  • the co-sputter deposition process uses a gas mixture of two or more inert gases as a sputtering gas, such that emission of one material and emission of another material are equal.
  • a resulting composite film has improved compositional uniformity.
  • the number of parameters such as gas flow of a mixture of the first sputtering gas and the second sputtering gas at the computed mixture rates, a negative bias voltage to apply to the composite target, and a sputtering pressure, may be adjusted to achieve desired thickness uniformity and compositional uniformity.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de dépôt par pulvérisation d'un film composite dans une chambre de dépôt physique en phase vapeur (PVD) consistant à calculer les taux de mélange d'un premier gaz de pulvérisation et d'un second gaz de pulvérisation dans un mélange du premier gaz de pulvérisation et du second gaz de pulvérisation, de sorte que l'émission d'un matériau d'élément léger et l'émission d'un matériau d'élément lourd à partir d'une cible composite comprenant le matériau d'élément léger et le matériau d'élément lourd sont sensiblement les mêmes dans un processus de pulvérisation utilisant le mélange du premier gaz de pulvérisation et du second gaz de pulvérisation, et à effectuer un processus de dépôt de co-pulvérisation, comprenant la pulvérisation du matériau d'élément léger et du matériau d'élément lourd sur un substrat à partir de la cible composite à l'aide du mélange du premier gaz de pulvérisation et du second gaz de pulvérisation, le matériau d'élément léger ayant un poids moléculaire inférieur à celui du matériau d'élément lourd.
PCT/US2024/021548 2023-04-04 2024-03-26 Dépôt par pulvérisation d'un film composite ayant une uniformité de composition Pending WO2024211129A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0565637A (ja) * 1991-09-05 1993-03-19 Ricoh Co Ltd イオンビームスパツタ装置
JP2008019163A (ja) * 2007-07-27 2008-01-31 Toyo Tanso Kk 還元性雰囲気炉用炭素複合材料及びその製造方法
KR20180032423A (ko) * 2016-09-22 2018-03-30 경기대학교 산학협력단 스퍼터 장치 및 이를 이용한 수소분리막 제조방법
US20200056281A1 (en) * 2018-08-14 2020-02-20 Viavi Solutions Inc. Argon-helium based coating
US20220074044A1 (en) * 2020-09-09 2022-03-10 Tokyo Electron Limited Film forming method, film forming apparatus, and program

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0565637A (ja) * 1991-09-05 1993-03-19 Ricoh Co Ltd イオンビームスパツタ装置
JP2008019163A (ja) * 2007-07-27 2008-01-31 Toyo Tanso Kk 還元性雰囲気炉用炭素複合材料及びその製造方法
KR20180032423A (ko) * 2016-09-22 2018-03-30 경기대학교 산학협력단 스퍼터 장치 및 이를 이용한 수소분리막 제조방법
US20200056281A1 (en) * 2018-08-14 2020-02-20 Viavi Solutions Inc. Argon-helium based coating
US20220074044A1 (en) * 2020-09-09 2022-03-10 Tokyo Electron Limited Film forming method, film forming apparatus, and program

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