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WO2024207332A1 - Procédé de préparation d'une matrice photovoltaïque en pérovskite de grande surface - Google Patents

Procédé de préparation d'une matrice photovoltaïque en pérovskite de grande surface Download PDF

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Publication number
WO2024207332A1
WO2024207332A1 PCT/CN2023/086657 CN2023086657W WO2024207332A1 WO 2024207332 A1 WO2024207332 A1 WO 2024207332A1 CN 2023086657 W CN2023086657 W CN 2023086657W WO 2024207332 A1 WO2024207332 A1 WO 2024207332A1
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printing
layer
screen
perovskite
transport layer
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English (en)
Chinese (zh)
Inventor
陈永华
陈畅顺
夏英东
黄维
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Nanjing Tech University
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Nanjing Tech University
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the technical field of photovoltaic component preparation, and in particular to a method for preparing a large-area perovskite photovoltaic matrix.
  • Perovskite materials have the advantages of high photoelectric conversion efficiency, wide absorption spectrum range, high carrier mobility, etc., and are widely used in solar cells, LEDs, lasers and other fields. In recent years, the research on perovskite solar cells has developed rapidly, and the photoelectric conversion efficiency has increased from the initial 3.8% to the current 26.08% (certified 25.73%), with broad commercial prospects.
  • the preparation scheme of large-area perovskite modules is usually to prepare the electron transport layer, perovskite layer, hole transport layer, and top electrode layer layer by layer on a conductive substrate, and use laser etching technology to connect the battery units in series to form a perovskite module, and then connect the perovskite modules in parallel to form a large-area perovskite component.
  • the uneven annealing process usually makes the perovskite crystallization process uncontrollable and prone to high-density internal defects, which can easily cause the perovskite battery to short-circuit and cause the entire module to fail.
  • the preparation method of constructing large components with small modules has also greatly increased the preparation cost and labor cost of the components, seriously restricting the commercialization process of perovskite photovoltaic devices.
  • the present invention provides a method for preparing a large-area perovskite photovoltaic matrix.
  • the specific scheme is as follows:
  • a method for preparing a large-area perovskite photovoltaic matrix comprises the following steps:
  • a plurality of crisscross etching lines are formed by laser etching in a preset rectangular coating area of the conductive substrate to obtain b 1 ⁇ b 2 rectangular bottom electrode areas, where b 1 and b 2 are both integers not less than 4;
  • etching line as a position reference, screen-printing the perovskite film in each bottom electrode region, and after the printed film is leveled, performing thermal annealing deposition treatment to obtain the perovskite layer;
  • etching line as a position reference, screen-printing a hole transport layer film in each bottom electrode region, and after the printed film is leveled, performing a thermal annealing deposition treatment to obtain a hole transport layer;
  • etching line as a position reference, screen-printing a top electrode layer film in each bottom electrode region, and after the printed film is leveled, performing a thermal annealing deposition process to obtain a top electrode layer;
  • b 1 ⁇ b 2 interconnected metal silver wires are screen-printed, and the conductive substrate, the hole blocking layer, the perovskite layer, the hole transport layer and the top electrode layer are surrounded by metal silver wires for carrier collection, and annealing is performed after standing to obtain a perovskite photovoltaic matrix.
  • an electron transport layer is further provided between the hole blocking layer and the perovskite layer, and the preparation method further comprises:
  • etching line as a position reference, screen-printing an electron transport layer thin film in each bottom electrode region, and after the printed thin film is leveled, curing treatment and high-temperature sintering are performed to obtain the electron transport layer;
  • the electron transport layer is surrounded by a metallic silver wire.
  • the hole blocking layer, the electron transport layer, the perovskite layer, the hole transport layer, and the top electrode layer in each bottom electrode region are in contact with only one etching line.
  • the hole blocking layer includes dense tin oxide or dense titanium oxide.
  • the electron transport layer includes mesoporous tin oxide or mesoporous titanium oxide.
  • ionic liquid methylamine acetate, methylamine propionate or methylamine butyrate is used as a solvent to dissolve perovskites composed of FAMAPbI 3 , CsMA PbI 3 , and CA-FA-MAPbI 3 , and stirred at a preset temperature environment, and then cooled to room temperature to obtain a perovskite slurry that can be screen-printed.
  • the top electrode layer is composed of graphite, cellulose, carbon black, Carbon materials composed of carbon nanotubes, graphene and terpineol;
  • the top electrode layer is composed of Cu.
  • Laser etching is performed on the surface coated with conductive coating using a laser etcher:
  • the hole blocking layer, the perovskite layer, and the hole transport layer have a size of 1.05 cm ⁇ 1.05 cm in each bottom electrode region;
  • the size of the electron transport layer in each bottom electrode region is 1.05 cm ⁇ 1.05 cm-2.05 cm ⁇ 2.05 cm;
  • the size of the top electrode layer in each bottom electrode region is 1.10 cm ⁇ 1.00 cm-2.50 cm ⁇ 2.00 cm.
  • the present invention provides a method for preparing a large-area perovskite photovoltaic matrix, which adopts a screen printing process to pattern the preparation of a large-area perovskite photovoltaic matrix, which is beneficial to enhancing the crystallization controllability of a large-area perovskite photovoltaic device; there is no need to use the traditional splicing method to connect small perovskite modules in parallel into a large-area component, and a large-scale perovskite photovoltaic device can be directly prepared, with a high repetition rate, which is beneficial to the efficient packaging of the device and improves the stability of the device; silver wires are used to collect and directionally transmit carriers, which reduces the transmission loss of carriers and helps to improve device performance; it has good repeatability and high reliability, and laser etching is only used for position reference at the beginning. In the subsequent preparation process of the perovskite photovoltaic matrix, no laser etching process is used, which improves the preparation rate of perovskit
  • FIG1 is a flow chart of the preparation method of Example 1 of the present invention.
  • FIG2 is a flow chart of the preparation method of Example 2 of the present invention.
  • FIG. 3 is a schematic diagram of the structure of a single-node screen-printed matrix device according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a screen-printed perovskite photovoltaic matrix according to an embodiment of the present invention.
  • 1-glass 2-conductive substrate; 3-hole blocking layer; 4-electron transport layer; 5-perovskite layer; 6-hole transport layer; 7-top electrode layer.
  • This embodiment proposes a method for preparing a large-area perovskite photovoltaic matrix, which uses a screen printing process to pattern and prepare a large-area perovskite photovoltaic matrix, which is conducive to enhancing the crystallization controllability of large-area perovskite photovoltaic devices and can effectively solve the shortcomings of the existing large-area perovskite device preparation process.
  • the process of the preparation method is shown in Figure 1 of the specification. The specific scheme is as follows:
  • a method for preparing a large-area perovskite photovoltaic matrix comprises the following steps:
  • etching line as a position reference, screen-printing a hole blocking layer film in each bottom electrode region, and leveling the printed film, performing a curing treatment and high-temperature sintering to obtain a hole blocking layer;
  • etching line as a position reference, screen-printing a perovskite film in each bottom electrode region, and after the printed film is leveled, performing a thermal annealing deposition process to obtain a perovskite layer;
  • etching line as a position reference, screen-printing a hole transport layer film in each bottom electrode region, and after the printed film is leveled, performing a thermal annealing deposition process to obtain a hole transport layer;
  • etching line as a position reference, screen print the top electrode layer film in each bottom electrode area. After the printed film is leveled, a thermal annealing deposition process is performed to obtain a top electrode layer;
  • This embodiment provides a method for preparing a large-area perovskite photovoltaic matrix, which eliminates the electron transport layer, and the prepared device is a flat-panel fully screen-printed perovskite photovoltaic matrix.
  • Step 101 is responsible for preparing and cleaning the substrate.
  • Fluorine-doped SnO 2 conductive glass FTO
  • the conductive glass is located on the bottom layer of glass, the bottom layer of glass is non-conductive, and the conductive glass has conductivity.
  • the surface coating area of the conductive glass is rectangular.
  • the FTO layer is divided into b1 ⁇ b2 independent bottom electrode areas by etching process, and each bottom electrode area is an independent rectangular area composed of etching lines on four sides of the top, bottom, left and right.
  • the etched conductive glass is ultrasonically cleaned with detergent, deionized water, and ethanol for 15 minutes in turn, and then blown dry with dry compressed air for standby use.
  • the solution of this embodiment only involves laser etching when processing the conductive substrate.
  • the laser etching process is not used in the subsequent preparation process.
  • the etching line provides a position reference for the preparation of subsequent functional layers, facilitates the preparation of subsequent functional layers, improves the preparation rate of perovskite photovoltaic devices and reduces production costs.
  • Step 102 is to use screen printing to print a hole blocking layer.
  • the hole blocking layer can be dense titanium oxide (i.e., c-TiO2) or dense tin oxide (i.e., c- SnO2 ).
  • Print b1 ⁇ b2 hole blocking layer films with an area of e2 , where e2 1.05cm ⁇ 1.05cm.
  • the hole blocking layer in each bottom electrode region is adjacent to the right side of the left etched line. The edges are in contact and are located in the middle of the upper and lower etching lines, and are not in contact with the other three etching lines.
  • the printed hole barrier film is leveled and left to stand for 15min until the wet hole barrier film is leveled. Then, it is placed in a curing box for curing treatment at a temperature of 110°C and a heat preservation time of 10min.
  • Step 103 is screen printing the perovskite layer.
  • Ionic liquid methylamine acetate (MAAc) is used as a solvent to dissolve the perovskite layer of FAMAPbI 3 or CsFAPbI 3.
  • ionic liquid methylamine propionate (MAPa) or methylamine butyrate (MABa) is used as a solvent to dissolve the perovskite of Cs-MAPbI 3 or CA-FA-MAPbI 3. Stir for 12 hours at 60°C, and then cool it to room temperature to obtain a screen-printed perovskite slurry.
  • the perovskite film in each bottom electrode region contacts the right edge of the left etching line and is in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • Step 104 is to prepare a hole transport layer by screen printing, and the hole transport layer is composed of NiO.
  • a single rectangular wet perovskite film contacts the right edge of the left etching line and is located in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • Step 105 is to prepare the top electrode layer by screen printing.
  • the top electrode layer is composed of carbon material, composed of graphite, cellulose, carbon black, carbon nanotubes, graphene and pinene alcohol.
  • the top electrode layer can also be composed of Cu.
  • Print b 1 ⁇ b 2 top electrode layer films with an area of e 6 , e 5 1.10cm ⁇ 1.00cm-2.5cm ⁇ 2.00cm.
  • a single top electrode layer film contacts the left edge of the left etching line and is located in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • the printed top electrode layer is leveled and left to stand for 10 minutes until it is completely leveled.
  • a screen-printed top electrode layer is obtained.
  • Step 106 is to prepare silver wires by screen printing, and the silver wires are composed of silver powder, polyurethane, glass powder, etc.
  • Print b 1 ⁇ b 2 interconnected wrapped silver wires, and each functional layer is surrounded by a screen-printed metal silver wire.
  • the printed silver wire is left to stand for 10 minutes and annealed on a 60°C hot plate for 20 minutes. Using silver wires to collect and transmit carriers in a directional manner reduces the transmission loss of carriers and helps to improve device performance.
  • the present embodiment provides a method for preparing a large-area perovskite photovoltaic matrix, which adopts a screen printing process to pattern the preparation of a large-area perovskite photovoltaic matrix, which is beneficial to enhancing the crystallization controllability of a large-area perovskite photovoltaic device; there is no need to use the traditional splicing method to connect small perovskite modules in parallel into a large-area component, and a large-scale perovskite photovoltaic device can be directly prepared, with a high repetition rate, which is beneficial to the efficient packaging of the device and improves the stability of the device; silver wire is used to collect and directionally transmit carriers, which reduces the transmission loss of carriers and helps to improve the performance of the device; the method has good repeatability and high reliability, and laser etching is only used for position reference at the beginning, and in the subsequent preparation process of the perovskite photovoltaic matrix, the perovskite photovoltaic device can be directly prepared.
  • This embodiment adds an electron transport layer on the basis of embodiment 1.
  • the flow chart of the preparation method of this embodiment is shown in Figure 2 of the specification, and the prepared photovoltaic matrix is shown in Figure 3 of the specification.
  • the specific scheme is as follows:
  • etching line as a position reference, screen-printing a hole blocking layer film in each bottom electrode region, and after the printed film is leveled, performing a curing treatment and high-temperature sintering to obtain a hole blocking layer;
  • etching line as a position reference, screen-printing an electron transport layer thin film in each bottom electrode region, and leveling the printed thin film, performing a curing treatment and high-temperature sintering to obtain an electron transport layer;
  • etching line as a position reference, screen-printing a perovskite film in each bottom electrode region, and after the printed film is leveled, performing a thermal annealing deposition process to obtain a perovskite layer;
  • etching line as a position reference, screen-printing a hole transport film in each bottom electrode region, and after the printed film is leveled, performing a thermal annealing deposition process to obtain a hole transport layer;
  • etching line as a position reference, screen-printing a top electrode layer thin film in each bottom electrode region, and after the printed thin film is leveled, performing a thermal annealing deposition process to obtain a top electrode layer;
  • the hole blocking layer, the electron transport layer, the perovskite layer, the hole transport layer and the top electrode layer in each bottom electrode region are in contact with only one etching line.
  • the perovskite photovoltaic matrix prepared in this embodiment is shown in FIG3 , wherein the conductive substrate 2 is located on the glass 1, and the conductive substrate 2, the hole blocking layer 3, the electron transport layer 4, the perovskite layer 5, the hole transport layer 6, the electron transport layer 7, the electron transport layer 8, the electron transport layer 9, the electron transport layer 10, the electron transport layer 11, the electron transport layer 12, the electron transport layer 13, the electron transport layer 14, the electron transport layer 15, the electron transport layer 16, the electron transport layer 17, the electron transport layer 18, the electron transport layer 19, the electron transport layer 20, the electron transport layer 21, the electron transport layer 22, the electron transport layer 23, the electron transport layer 24, the electron transport layer 25, the electron transport layer 26, the electron transport layer 27, the electron transport layer 28, the electron transport layer 29, the electron transport layer
  • the transport layer 6 and the top electrode layer 7 are arranged in sequence from bottom to top.
  • Step 201 is responsible for preparing and cleaning the conductive substrate.
  • Fluorine-doped SnO 2 conductive glass (FTO) is used as the conductive substrate, and the surface coating area of the conductive glass is rectangular.
  • the FTO layer is divided into b 1 ⁇ b 2 independent bottom electrode regions by etching process.
  • Each bottom electrode region is an independent rectangular region, which is composed of etching lines on four sides. After etching, the etched conductive glass is cleaned with detergent, deionized water and ethanol ultrasonically for 15 minutes in sequence. After cleaning, it is blown dry with dry compressed air for use.
  • the solution of this embodiment only involves laser etching when preparing the substrate, and no laser etching process is used in the subsequent preparation process.
  • the etching lines provide a position reference for the preparation of subsequent functional layers, facilitate the preparation of subsequent functional layers, improve the preparation rate of perovskite photovoltaic devices and reduce production costs.
  • Step 202 is to use screen printing to form a hole blocking layer.
  • the hole blocking layer can be dense titanium oxide (i.e., c-TiO2) or dense tin oxide (i.e., c- SnO2 ).
  • Print b1 ⁇ b2 hole blocking layer films with an area of e2 , where e2 1.05cm ⁇ 1.05cm.
  • the hole blocking layer in each bottom electrode region contacts the right edge of the left etching line and is located in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • the printed hole blocking layer film was leveled and left to stand for 15 minutes until the wet hole blocking layer film was leveled. Then, it was placed in a curing box for curing at 110°C for 10 minutes. After curing, it was placed in a muffle furnace for high-temperature sintering at 520°C for 90 minutes. It was cooled to room temperature with the furnace and taken out to obtain a screen-printed matrix hole blocking layer.
  • Step 203 is to use screen printing to print an electron transport layer, which is mesoporous titanium oxide m-TiO 2 , i.e., m-TiO 2.
  • an electron transport layer which is mesoporous titanium oxide m-TiO 2 , i.e., m-TiO 2.
  • Print b 1 ⁇ b 2 bottom electrode areas with an area of e 3 , e 3 1.05cm ⁇ 1.05cm-2.05cm ⁇ 2.05cm.
  • a single rectangular hole blocking layer contacts the right edge of the left etching line and is located in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • the printed hole blocking layer is leveled and left to stand for 15min until the printed wet electron transport layer film is leveled. Then put it into a curing box for curing treatment at a temperature of 110°C and a holding time of 10 minutes.
  • Step 204 is screen printing the perovskite layer.
  • Ionic liquid methylamine acetate (MAAc) is used as a solvent to dissolve the perovskite layer of FAMAPbI 3 or CsFAPbI 3.
  • ionic liquid methylamine propionate (MAPa) or methylamine butyrate (MABa) is used as a solvent to dissolve the perovskite of Cs-MAPbI 3 or CA-FA-MAPbI 3. Stir for 12 hours at 60°C, and then cool it to room temperature to obtain a screen-printed perovskite slurry.
  • the perovskite film in each bottom electrode region contacts the right edge of the left etching line and is in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • Step 205 is to prepare a hole transport layer by screen printing.
  • the hole transport layer is composed of NiO.
  • a single rectangular wet perovskite film contacts the right edge of the left etching line and is in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • Step 206 is to prepare the top electrode layer by screen printing.
  • the top electrode layer is composed of carbon materials, including graphite, cellulose, carbon black, carbon nanotubes, graphene and pinene alcohol.
  • the top electrode layer can also be composed of Cu.
  • Print b 1 ⁇ b 2 top electrode layer films with an area of e 6 , e 5 1.10cm ⁇ 1.00cm-2.5cm ⁇ 2.00cm.
  • a single top electrode layer film contacts the left edge of the left etching line and is located in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • Step 207 is to prepare silver wires by screen printing, and the silver wires are composed of silver powder, polyurethane, glass powder, etc.
  • Print b 1 ⁇ b 2 interconnected wrapped silver wires, and each functional layer is surrounded by a screen-printed metal silver wire.
  • the printed silver wire is left to stand for 10 minutes and annealed on a 60°C hot plate for 20 minutes. Using silver wires to collect and transmit carriers in a directional manner reduces the transmission loss of carriers and helps to improve device performance.
  • a screen-printed perovskite photovoltaic matrix is obtained as shown in Figure 4.
  • the specific number of perovskite matrices can be adjusted according to printing conditions and actual needs.
  • This embodiment provides a large-area perovskite photovoltaic matrix based on screen printing technology.
  • the screen-printed perovskite photovoltaic matrix is composed of a large number of perovskite devices with an effective area of 1 cm2 connected in series and in parallel.
  • the large-area perovskite photovoltaic matrix includes a glass substrate, an ITO bottom electrode, an electron transport layer, a perovskite active layer, a hole transport layer, and a top electrode layer from bottom to top.
  • Each 1 cm2 device is surrounded by a screen-printed metal silver wire for carrier collection.
  • Each functional layer is prepared by screen printing, so the perovskite matrix perovskite component belongs to a fully screen-printed solar cell.
  • Embodiment 2 This embodiment lists several groups of parameters based on Embodiment 2. The specific parameters are shown in Table 1.
  • Step 1 Prepare and clean the substrate
  • the fluorine-doped SnO2 conductive glass was used as the substrate.
  • the surface coating area of the conductive glass was rectangular with a side length of 5 cm and 5 cm.
  • a laser etcher was used to perform laser etching on the conductive coating surface.
  • Four etching lines were etched on the long side, with a width of 0.5 mm for each etching line and a spacing of 1.1 cm between the etching lines.
  • Four etching lines were etched on the wide side, with a width of 0.5 mm for each etching line and a spacing of 1.1 cm between the etching lines. Therefore, the FTO layer was divided into 4 ⁇ 4 independent bottom electrode areas by the etching process.
  • the etched conductive glass was ultrasonically cleaned with detergent, deionized water, and ethanol for 15 minutes in turn. After cleaning, it was blown dry with dry compressed air for use.
  • Step 2 Screen printing of hole blocking layer
  • the hole blocking layer is screen printed and is made of dense titanium oxide, namely c-TiO 2 .
  • the hole blocking layer film is printed in 4 ⁇ 4 rectangular areas with an area of 1.05 cm ⁇ 1.05.
  • the single hole barrier film is in contact with the right edge of the left etching line, and is in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • the screen printing screen mesh is 400 mesh, the printing spacing is 1.5mm, the printing speed is 5cm/s, and the printing pressure is 0.10MPa.
  • the hole barrier layer after printing is leveled and left to stand for 15 minutes until the wet hole barrier film after printing is leveled.
  • the film was placed in a muffle furnace for high-temperature sintering at a temperature of 520° C. for 90 minutes.
  • the film was cooled to room temperature in the furnace and taken out to obtain a screen-printed matrix hole blocking layer.
  • Step 3 Screen printing of electron transport layer
  • the electron transport layer is screen printed and is mesoporous titanium oxide m-TiO 2 , ie m-TiO 2 .
  • the electron transport layer film is printed in 4 ⁇ 4 rectangular areas with an area of 1.05 cm ⁇ 1.05 cm.
  • a single rectangular electron transport layer film contacts the right edge of the left etched line and is located between the upper and lower etched lines. The middle of the etching line does not touch the other three etching lines.
  • the screen printing screen mesh is 300 mesh, the printing spacing is 1.0mm, the printing speed is 5cm/s, and the printing pressure is 0.10MPa.
  • the printed hole blocking layer is leveled and left to stand for 15 minutes until the printed wet electron transport layer film is leveled.
  • the film was placed in a muffle furnace for high-temperature sintering at a temperature of 520° C. for 90 minutes.
  • the film was cooled to room temperature in the furnace and taken out to obtain a screen-printed matrix electron transport layer.
  • Step 4 Screen printing the perovskite layer
  • Ionic liquid methylamine acetate MAAc
  • MAAc Ionic liquid methylamine acetate
  • the perovskite layer composition was MAPbI 3 .
  • the mixture was stirred at 60°C for 12 hours, and then cooled to room temperature to obtain a screen-printed perovskite slurry.
  • the perovskite layer was prepared by screen printing, and the perovskite film was printed in 4 ⁇ 4 independent rectangular areas with an area of 1.05 cm ⁇ 1.05 cm.
  • a single rectangular wet perovskite film is in contact with the right edge of the left etching line, and is in the middle of the upper and lower etching lines, and does not touch the other three etching lines.
  • the screen printing screen mesh is 400 mesh, the printing spacing is 0.8mm, the printing speed is 5cm/s, and the printing pressure is 0.10MPa. Place it in nitrogen or dry air, and level the printed perovskite film, and let it stand for 3 minutes until it is completely leveled.
  • a thermal annealing deposition treatment was performed at a temperature of 50° C. and an annealing time of 120 min to obtain a screen-printed matrix perovskite layer.
  • Step 5 Screen printing of hole transport layer
  • the hole transport layer was prepared by screen printing, and the hole transport layer was composed of NiO.
  • the hole transport layer film was printed in 4 ⁇ 4 independent rectangular areas with an area of 1.05 cm ⁇ 1.05 cm.
  • a single rectangular wet hole transport layer film contacts the right edge of the left etching line and is in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • the screen printing screen mesh is 400 mesh, the printing spacing is 1.0mm, the printing speed is 5cm/s, and the printing pressure is 0.10MPa. Place it in nitrogen or dry air, and level the printed hole transport layer film, and let it stand for 5 minutes until it is completely leveled.
  • Step 6 Screen printing the top electrode layer
  • the top electrode layer was prepared by screen printing, and the top electrode layer was composed of carbon materials, including graphite, cellulose, carbon black, carbon nanotubes, graphene and terpineol. 4 ⁇ 4 independent rectangular areas with an area of 1.20 cm ⁇ 1.00 cm were printed.
  • the single top electrode layer film is in contact with the left edge of the left etching line, and is in the middle of the upper and lower etching lines, and does not contact the other three etching lines.
  • the screen printing screen mesh is 100 mesh, the printing spacing is 1.0mm, the printing speed is 5cm/s, and the printing pressure is 0.20MPa.
  • the printed top electrode layer film is leveled and left to stand for 10 minutes until it is completely leveled.
  • a thermal annealing deposition treatment is performed at a temperature of 100° C. and an annealing time of 5 minutes to obtain a screen-printed top electrode layer as shown in FIG3 .
  • the silver wire is prepared by screen printing, and the silver wire composition includes silver powder, polyurethane, glass powder, etc. b 1 ⁇ b 2 interconnected wrapped silver wires are printed.
  • the screen printing screen mesh number is 250 mesh, the printing spacing is 1.0 mm, the printing speed is 5 cm/s, and the printing pressure is 0.20 MPa.
  • the printed silver wire is left to stand for 10 minutes and annealed on a 60°C hot plate for 20 minutes.
  • the screen-printed perovskite photovoltaic matrix shown in FIG4 is obtained.
  • the present invention provides a method for preparing a large-area perovskite photovoltaic matrix.
  • the large-area perovskite photovoltaic matrix is patterned by a screen printing process, which is beneficial to enhancing the crystallization controllability of large-area perovskite photovoltaic devices. It is not necessary to use the traditional splicing method to connect small perovskite modules in parallel into large-area components, and a large-scale perovskite photovoltaic device can be directly prepared.
  • the repetition rate is high, which is beneficial to the efficient packaging of the device and improves the stability of the device.
  • Silver wires are used to collect and directionally transmit carriers, which reduces the transmission loss of carriers and helps to improve the performance of the device.
  • the method has good repeatability and high reliability.
  • Laser etching is only used for position reference at the beginning.
  • the perovskite photovoltaic matrix can be directly prepared. No laser etching process is used, which improves the preparation rate of perovskite photovoltaic devices and reduces production costs.
  • modules or steps of the present invention described above can be implemented by a general-purpose computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, optionally, they can be implemented by a program code executable by a computer device, so that they can be stored in a storage device and executed by the computing device, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation.
  • the present invention is not limited to any specific combination of hardware and software.

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  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un procédé de préparation d'une matrice photovoltaïque en pérovskite de grande surface. Le procédé de préparation consiste à : effectuer une gravure sur un substrat conducteur à l'aide d'un laser, de façon à obtenir une pluralité de lignes gravées agencées de manière entrecroisée, et effectuer une division pour obtenir b1×b2 régions d'électrode inférieure ; en utilisant les lignes gravées en tant que références de position, effectuer une sérigraphie sur une couche mince de couche de blocage de trous, de façon à obtenir une couche de blocage de trous ; effectuer une sérigraphie sur une couche mince de pérovskite, de façon à obtenir une couche de pérovskite ; effectuer une sérigraphie sur une couche mince de couche de transport de trous, de façon à obtenir une couche de transport de trous ; effectuer une sérigraphie sur une couche mince de couche d'électrode supérieure, de façon à obtenir une couche d'électrode supérieure ; et effectuer une sérigraphie sur b1×b2 fils d'argent métalliques interconnectés, et amener les couches fonctionnelles à être entourées par les fils d'argent métalliques pour la collecte de porteurs, de façon à obtenir une matrice photovoltaïque en pérovskite. Dans la solution de la présente invention, la formation de motifs est effectuée à l'aide d'un processus de sérigraphie, de façon à préparer directement une matrice photovoltaïque en pérovskite de grande surface, qui facilite l'amélioration de la contrôlabilité de cristallisation d'un dispositif photovoltaïque en pérovskite de grande surface et présente un taux de répétition élevé, ce qui facilite le conditionnement efficace d'un dispositif et améliore la stabilité du dispositif.
PCT/CN2023/086657 2023-04-06 2023-04-06 Procédé de préparation d'une matrice photovoltaïque en pérovskite de grande surface Pending WO2024207332A1 (fr)

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US20200028081A1 (en) * 2016-08-02 2020-01-23 Aalto University Foundation Method for Inkjet Printing an Organic-Inorganic Perovskite
CN111048667A (zh) * 2019-12-19 2020-04-21 浙江天地环保科技有限公司 一种高效率大面积钙钛矿太阳能电池及制备方法
CN112071988A (zh) * 2020-09-02 2020-12-11 西北工业大学 一种全丝网印刷钙钛矿太阳能电池的制备方法
CN114665026A (zh) * 2022-02-16 2022-06-24 深圳先进技术研究院 一种卤化钙钛矿太阳能电池及其底界面自生长修饰方法
CN115734626A (zh) * 2022-11-25 2023-03-03 浙江光储充能源科技有限公司 全丝网印刷钙钛矿太阳能电池热封装系统及操作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200028081A1 (en) * 2016-08-02 2020-01-23 Aalto University Foundation Method for Inkjet Printing an Organic-Inorganic Perovskite
CN111048667A (zh) * 2019-12-19 2020-04-21 浙江天地环保科技有限公司 一种高效率大面积钙钛矿太阳能电池及制备方法
CN112071988A (zh) * 2020-09-02 2020-12-11 西北工业大学 一种全丝网印刷钙钛矿太阳能电池的制备方法
CN114665026A (zh) * 2022-02-16 2022-06-24 深圳先进技术研究院 一种卤化钙钛矿太阳能电池及其底界面自生长修饰方法
CN115734626A (zh) * 2022-11-25 2023-03-03 浙江光储充能源科技有限公司 全丝网印刷钙钛矿太阳能电池热封装系统及操作方法

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