[go: up one dir, main page]

WO2024201548A1 - Appareil de dépôt en phase vapeur et procédé de production de dispositif d'affichage - Google Patents

Appareil de dépôt en phase vapeur et procédé de production de dispositif d'affichage Download PDF

Info

Publication number
WO2024201548A1
WO2024201548A1 PCT/JP2023/011690 JP2023011690W WO2024201548A1 WO 2024201548 A1 WO2024201548 A1 WO 2024201548A1 JP 2023011690 W JP2023011690 W JP 2023011690W WO 2024201548 A1 WO2024201548 A1 WO 2024201548A1
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
deposition
deposition device
shell
inner shell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2023/011690
Other languages
English (en)
Japanese (ja)
Inventor
真博 犬塚
学 二星
真一 江角
英幸 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Display Technology Corp
Original Assignee
Sharp Display Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Display Technology Corp filed Critical Sharp Display Technology Corp
Priority to PCT/JP2023/011690 priority Critical patent/WO2024201548A1/fr
Publication of WO2024201548A1 publication Critical patent/WO2024201548A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • This disclosure relates to a deposition apparatus for forming a deposition film and a method for manufacturing a display device using the deposition apparatus.
  • a known method for forming a thin film is a vapor deposition method in which a material in a crucible is melted and evaporated using a heater, and then brought into contact with the surface of an object positioned above the crucible and solidified to form a thin film containing the material on the surface of the object.
  • a vapor deposition method using a vapor deposition apparatus may be adopted to form each layer of the light-emitting element in order to reduce deterioration of the layers.
  • Patent Document 1 discloses a method for forming an organic layer of an organic EL element in a vapor deposition process using a vapor deposition apparatus.
  • the deposition rate of the deposited film may change due to uneven heating inside the crucible, bias in the deposition material remaining in the crucible, etc. Changes in the deposition rate of the deposited film during the deposition process can lead to a decrease in the quality of the deposited film, or an extension of the takt time or an increase in costs associated with the execution of a process to stabilize the deposition rate.
  • the deposition apparatus includes a crucible including an outer shell having an opening for releasing deposition material toward a deposition target, and an inner shell that is in contact with at least a portion of the inner surface of the outer shell and has a higher specific heat than the outer shell.
  • FIG. 1 is a schematic cross-sectional side view of a vapor deposition apparatus according to a first embodiment.
  • 1 is a schematic side cross-sectional view of a display device according to each embodiment.
  • FIG. 2 is a schematic plan view of a crucible according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view of a crucible according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional side view of a deposition apparatus in a deposition step according to the first embodiment.
  • FIG. 11 is a schematic cross-sectional side view of a vapor deposition apparatus according to a second embodiment.
  • FIG. 11 is a schematic cross-sectional side view of a vapor deposition apparatus according to a third embodiment.
  • FIG. 11 is a schematic cross-sectional side view of a vapor deposition apparatus according to embodiment 4.
  • FIG. 11 is a schematic cross-sectional view of a crucible according to a fourth embodiment.
  • FIG. 11 is a schematic cross-sectional side view of a vapor deposition apparatus according to embodiment 5.
  • FIG. 11 is a schematic cross-sectional view of a crucible according to a fifth embodiment.
  • FIG. 11 is a schematic cross-sectional view of another crucible according to embodiment 5.
  • FIG. 13 is a schematic cross-sectional side view of a vapor deposition apparatus according to embodiment 6.
  • FIG. 13 is a schematic cross-sectional view of a crucible according to a sixth embodiment.
  • FIG. 13 is a schematic cross-sectional view of another crucible according to embodiment 6.
  • FIG. 2 is a schematic side cross-sectional view of a display device 100 according to this embodiment.
  • the display device 100 is a device that can be used, for example, as a display for a television or a smartphone.
  • the display device 100 includes a substrate 101, for example a TFT substrate, and a plurality of light-emitting elements 102 formed on the substrate 101.
  • the light-emitting element 102 has, for example, from the substrate 101 side, anode 103 as a first electrode, hole injection layer 104, hole transport layer 105, light-emitting layer 106, electron transport layer 107, and cathode 108 as a second electrode.
  • the structure of the light-emitting element 102 is not limited to the above configuration, and may have, from the substrate 101 side, cathode 108, electron transport layer 107, light-emitting layer 106, hole transport layer 105, hole injection layer 104, and anode 103.
  • the light-emitting element 102 has at least the light-emitting layer 106 between the anode 103 and the cathode 108, it is not necessary to have at least one of the hole injection layer 104, hole transport layer 105, and electron transport layer 107.
  • the light-emitting element 102 has a functional layer including at least the light-emitting layer 106 between the anode 103 and the cathode 108.
  • the light-emitting element 102 may also have further functional layers, including, for example, an electron injection layer between the electron transport layer 107 and the cathode 108.
  • the display device 100 applies a voltage between the anode 103 and the cathode 108 of each light-emitting element 102 via a driver (not shown) formed on the substrate 101.
  • Each light-emitting element 102 to which a voltage is applied injects holes from the anode 103 into the light-emitting layer 106 via the hole injection layer 104 and the hole transport layer 105, and also injects electrons from the cathode 108 into the light-emitting layer 106 via the electron transport layer 107.
  • the light-emitting layer 106 has a light-emitting material, for example an organic light-emitting material, and emits light due to excitons generated by recombination of the injected holes and electrons.
  • At least one of the anode 103 and the cathode 108 is a transparent electrode that is light-transmitting, and the light-emitting element 102 extracts light generated from the light-emitting layer 106 to the side of the transparent electrode. In this way, the display device 100 displays by extracting light individually from each light-emitting element 102.
  • the manufacturing method of the display device 100 according to this embodiment includes, for example, a method of sequentially depositing each layer of the light-emitting element 102 on the substrate 101.
  • a method of sequentially depositing each layer of the light-emitting element 102 on the substrate 101 includes, for example, a method of sequentially depositing each layer of the light-emitting element 102 on the substrate 101.
  • at least one of the layers of the light-emitting element 102 is deposited by a deposition method using a deposition apparatus described below.
  • Fig. 1 is a schematic cross-sectional side view of the deposition device 1 according to the present embodiment.
  • each schematic cross-sectional side view of the deposition device according to the present disclosure shows a cross section passing through a plurality of openings 45 described later and along the normal direction of the inner surface of the bottom 41, and members located on the back side of the cross section as viewed from the paper surface are omitted.
  • members formed as an integral unit are marked with the same hatching.
  • the deposition apparatus 1 includes a vacuum chamber 10, a crucible 20, and a heater unit 30.
  • the crucible 20 includes an outer shell 40 having an opening 45 for releasing the deposition material toward the deposition target, and an inner shell 50 that contacts at least a portion of the inner surface of the outer shell 40 and has a higher specific heat than the outer shell 40.
  • the deposition apparatus 1 reduces changes in the deposition rate of the deposition film.
  • the deposition apparatus 1, including the above, will be described in detail below.
  • Vacuum chamber 10 has a housing 11, a target holder 12, and a crucible holder 13. Housing 11 is hollow and has an airtight interior. Target holder 12 and crucible holder 13 may protrude from the inner surface of housing 11, for example, or may be integral with housing 11.
  • the housing 11 may have an entrance through which the deposition target on which the deposition film is formed by the deposition device 1 can be inserted and removed, and a door section that can close and seal the entrance.
  • the target holder 12 may be capable of holding a deposition target that is introduced from outside the housing 11 through the entrance.
  • the vacuum chamber 10 can create a vacuum inside the housing 11 with a pump (not shown).
  • the shape of the housing 11 may be cylindrical from the viewpoint of maintaining strength when the inside is made vacuum, but is not limited to this and may also be rectangular.
  • the crucible 20 described below is placed on the crucible holder 13, which holds the crucible 20 inside the housing 11.
  • the crucible holder 13 may hold the crucible 20 inside the housing 11 with a distance between the inner surface of the housing 11 and the crucible 20.
  • crucible> When a deposition material described later is placed in the crucible 20, the inside of the crucible 20 is heated by the heater unit 30, and the crucible 20 releases the deposition material toward the deposition target held by the target holder 12.
  • the crucible 20 includes an outer shell 40 and an inner shell 50.
  • Fig. 3A is a schematic plan view of the crucible 20
  • Fig. 3B is a schematic cross-sectional view of the crucible 20.
  • Fig. 3A is a schematic plan view of the crucible 20 when viewed in the direction A shown in Fig. 1, in other words, when the crucible 20 is viewed in a plan view from above to below.
  • Fig. 3B is a cross-sectional view of the crucible 20 taken along the line B-B shown in Fig. 1, in other words, a schematic cross-sectional view of the crucible 20 showing a horizontal cross section of the inner surface of the bottom 41 of the outer shell 40, which will be described later, and which passes through the opening 45 side of the inner shell 50.
  • each crucible according to this embodiment also show components located further back on the paper than the cross-section in order to show each part of the crucible in more detail. Also, all of the schematic cross-sectional views of each crucible according to this embodiment show a cross-section of the crucible that corresponds to the cross-section of crucible 20 shown in FIG. 3B.
  • the outer shell 40 includes a bottom 41, a side 42, a top plate 43, a top plate protrusion 44, and an opening 45.
  • the outer shell 40 has an internal space, for example a substantially rectangular shape, formed by the bottom 41, the side 42, and the top plate 43.
  • the bottom 41 and the top plate 43 may be rectangular plate-like members facing each other.
  • the side 42 is a side portion relative to the bottom 41, and in particular protrudes from the outer edge of the bottom 41 of the outer shell 40 towards the top plate 43 and connects to the outer edge of the top plate 43.
  • the top plate protrusions 44 are formed on the outer surface of the top plate 43, in other words, they protrude toward the outside of the crucible 20.
  • the openings 45 are formed on the inside of the top plate protrusions 44, and communicate the inside and outside of the outer shell 40. Therefore, the openings 45 are located between the bottom 41 and the position of the vapor deposition target placed on the target holder 12, in other words, the bottom 41 is located on the opposite side to the openings 45. Therefore, when the vapor deposition material is introduced into the crucible 20 and the inside of the crucible 20 is heated, the openings 45 release the vapor deposition material toward the vapor deposition target held by the target holder 12.
  • the inner shell 50 is located inside the outer shell 40, and in particular, is in contact with at least a portion of the inner surface of the outer shell 40.
  • the crucible 20 has a double structure of the outer shell 40 and the inner shell 50, which improves its strength.
  • the inner shell 50 according to this embodiment has a higher specific heat than the outer shell 40.
  • the outer shell 40 may contain a metal from the viewpoint of improving the strength of the crucible 20, and the inner shell 50 may contain a ceramic having a relatively higher specific heat than a metal.
  • the temperature of the inner shell 50 increases more slowly than that of the outer shell 40 because the specific heat of the inner shell 50 is higher than that of the outer shell 40. Therefore, by including the outer shell 40 and the inner shell 50, the temperature of the entire inner surface of the crucible 20 in contact with the deposition material increases more slowly than when the crucible 20 only has the outer shell 40.
  • the vapor deposition device 1 heats the vapor deposition material inside the crucible 20 more uniformly.
  • the vapor deposition device 1 reduces differences in the consumption rate of the vapor deposition material depending on the position inside the crucible 20.
  • the inner shell 50 experiences a smaller increase in temperature when the same amount of heat is applied, and a smaller drop in temperature when the same amount of heat is removed. Therefore, the inner surface of the crucible 20 is less susceptible to temperature fluctuations compared to the outer surface of the crucible 20. Therefore, the deposition apparatus 1 can more easily maintain a constant temperature inside the crucible 20.
  • the deposition apparatus 1 reduces the difference in the amount of remaining deposition material depending on the position inside the crucible 20, and reduces the difference in the amount of deposition material consumed depending on the position inside the crucible 20.
  • the deposition apparatus 1 also reduces the temperature change inside the crucible 20 over time, and reduces the change over time in the consumption rate of the deposition material inside the crucible 20. Therefore, the deposition apparatus 1 can make the consumption rate of the deposition material inside the crucible 20 more uniform regardless of the position inside the crucible 20 or the implementation time of the deposition film process, and thus makes the deposition rate of the deposition film more stable.
  • a method of more uniformly heating the deposition material inside the crucible 20 is to mix a heat isolating material with high thermal conductivity.
  • deposition materials are generally solid at room temperature, and the deposition material remaining inside the crucible 20 after the deposition process is completed hardens. For this reason, if a heat isolating material is mixed with the deposition material inside the crucible 20, it becomes difficult to separate the deposition material and the heat isolating material inside the crucible 20, which in turn makes it difficult to reuse the deposition material.
  • mixing the deposition material with the heat isolating material may result in a longer heating time due to an increase in the specific heat of the deposition material, or the deposition material may be contaminated by the heat isolating material. As described above, mixing a heat isolating material with the deposition material makes it more difficult to handle the deposition material.
  • the deposition device 1 includes a crucible 20 that has an outer shell 40 and an inner shell 50 that has a higher specific heat than the outer shell 40, thereby enabling more uniform heating of the deposition material inside. Therefore, the deposition device 1 does not require the above-mentioned heat equalizer in order to heat the deposition material inside the crucible 20 more uniformly. Therefore, the deposition device 1 can heat the deposition material inside the crucible 20 more uniformly while making it easier to handle the deposition material.
  • the inner shell 50 has a higher heat capacity than the outer shell 40. This allows the deposition device 1 to further reduce localized heating of the inner surface of the crucible 20.
  • the inner shell 50 contacts at least a portion of the side portion 42. This allows the deposition apparatus 1 to reduce localized heating of the inner surface of the inner shell 50 when the crucible 20 is heated from the side.
  • the inner shell 50 contacts at least a portion of the bottom 41 and the side of the side portion 42 of the bottom 41. In this case, direct contact of the deposition material inside the crucible 20 with the inner surface of the portion of the inner shell 50 that is not in contact with the outer shell 40 or with the inner surface of the outer shell 40 is reduced. Therefore, with the above configuration, the deposition device 1 reduces localized heating of the deposition material regardless of a reduction in the deposition material inside the crucible 20.
  • the inner shell 50 contacts the entire surface of the bottom 41 and the sides of the bottom 41 of each side 42.
  • the deposition device 1 reduces localized heating of the deposition material on both the sides and below the crucible 20, regardless of a reduction in the deposition material inside the crucible 20.
  • the inner shell 50 may have a rectangular bottom and sides protruding from each of multiple sides that define the outer edge of the bottom.
  • the display portion of a display device is often rectangular. Therefore, by having the bottoms of the outer shell 40 and inner shell 50 be rectangular, the uniformity of the film thickness or quality of the evaporated film formed on the rectangular display portion of the display device 100 can be improved compared to other shapes such as a circle.
  • the outer shell 40 and the inner shell 50 according to this embodiment are not particularly limited, so long as the inner shell 50 is in contact with at least a portion of the inner surface of the outer shell 40 and the specific heat of the inner shell 50 is higher than the specific heat of the outer shell 40.
  • the inner shell 50 may be in contact with at least one of the bottom 41 and the side 42.
  • the inner shell 50 may be in contact with the inner surface of the side 42 along the longitudinal direction of the bottom 41.
  • the inner shell 50 of this embodiment is removably attached to the outer shell 40. Therefore, the deposition device 1 of this embodiment makes it easier to clean the inner surface of the crucible 20 or change the deposition material for the following reasons.
  • deposition material may remain on the inner surface of the crucible of the deposition device even after the deposition film formation process, and periodic maintenance is required, including removing the deposition material and cleaning the inner surface of the crucible. Furthermore, when changing the material of the deposition film, replacing all of the deposition material inside the crucible can cause deposition material containing a different material to be mixed into the deposition material inside the crucible.
  • the inner surface of the inner shell 50 can be more easily cleaned by removing the inner shell 50 from the outer shell 40 and cleaning the inner shell 50 outside the vacuum chamber 10. Also, by attaching a new inner shell 50 to the outer shell 40 while cleaning the inner shell 50, the deposition device 1 can continue to form a deposition film during the above cleaning.
  • the vapor deposition device 1 can more easily change the material of the vapor deposition material inside the crucible 20.
  • the heater unit 30 is disposed inside the housing 11, and heats the crucible 20 from the outside, thereby heating the crucible 20.
  • the heater unit 30 includes a bottom heater 31 and a side heater 32 as heaters.
  • the bottom heater 31 is disposed between the housing 11 and the bottom 41
  • the side heater 32 is disposed between the housing 11 and the side 42.
  • each heater included in the heater section 30 is disposed in a position facing the inner shell 50 via the outer shell 40.
  • heat from the heater section 30 is efficiently transmitted to the inner shell 50 via the outer shell 40. Therefore, the deposition device 1 can heat the inner shell 50 more efficiently using the heater section 30. Therefore, in addition to the above configuration, considering that the specific heat of the inner shell 50 is higher than the specific heat of the outer shell 40, the deposition device 1 can efficiently heat the inside of the crucible 20 while reducing localized heating inside the crucible 20.
  • the deposition apparatus 1 includes a single crucible 20, but is not limited thereto.
  • the deposition apparatus 1 may include a plurality of crucibles 20 in which the deposition materials stored therein contain different materials.
  • the deposition apparatus 1 may include a control unit (not shown) that controls the operation of each unit.
  • the control unit may control evacuation of the inside of the vacuum chamber 10 and heating of the inside of the crucible 20 through control of the heater unit 30.
  • Fig. 4 is a schematic side cross-sectional view of the deposition apparatus 1 in a deposition process.
  • Fig. 4 also illustrates a deposition target X (to be described later) on whose surface a deposition film is formed by the deposition apparatus 1, and a deposition material M (material of the deposition film) stored inside a crucible 20.
  • the manufacturing method of the display device 100 includes the step of sequentially depositing each layer of the light-emitting element 102 on the substrate 101, and at least one of the layers of the light-emitting element 102 is deposited using the deposition apparatus 1.
  • the functional layers of the light-emitting element 102 including the hole injection layer 104, the hole transport layer 105, the light-emitting layer 106, and the electron transport layer 107, contain an organic material
  • the functional layers may be formed by a deposition method in order to reduce deterioration of the functional layers.
  • the new layer when a new layer is formed on the layer containing the organic material after it has been deposited, the new layer may be formed by a deposition method in order to reduce deterioration of the layer that has already been formed.
  • a laminate including the substrate 101, in which the layers on the substrate 101 side from the layer to be formed are formed is placed inside the vacuum chamber 10 as the deposition target X.
  • the laminate is placed on the target holder 12 with the surface on which the deposition film is to be formed facing downward, in other words, toward the crucible 20.
  • the deposition apparatus 1 evacuates the inside of the vacuum chamber 10, creating a vacuum inside the vacuum chamber 10.
  • the deposition material M may include, for example, a deposition material having sublimation properties, or may include a deposition material having melting properties.
  • the deposition apparatus 1 heats the crucible 20, in which the material of the layer to be formed is stored as the deposition material M, to vaporize the deposition material M.
  • the vaporized deposition material M inside the crucible 20 is released from the opening 45 of the outer shell 40 toward the laminate, which is the deposition target X.
  • vaporization refers to a phase transition in which a liquid becomes a gas, or a phase transition in which a solid sublimes into a gas.
  • the deposition apparatus 1 may heat the deposition material M inside the crucible 20 to change the deposition material M from a solid to a gas via a liquid, or may sublimate the deposition material M from a solid to a gas.
  • the deposition material M released from the opening 45 reaches the surface of the laminate. Upon reaching the surface of the laminate, the deposition material M is cooled by contact with the surface of the laminate and becomes solid again. As a result, a deposition film containing the deposition material M is formed on the surface of the laminate facing the crucible 20.
  • the layers of the light-emitting element 102 for example at least one of the anode 103 and the cathode 108, and the light-emitting layer 106 may be formed in an island shape for each subpixel on the substrate 101.
  • deposition of each layer may be performed through a deposition mask, such as a metal mask, that is arranged on the crucible 20 side of the laminate and has openings at positions corresponding to each subpixel.
  • a layer containing multiple materials may be formed by co-deposition in which multiple crucibles 20 are heated simultaneously to form a film.
  • At least one of the layers of the light-emitting element 102 may be formed by a vapor deposition method using the vapor deposition apparatus 1.
  • some of the layers of the light-emitting element 102 may be formed by a method other than the vapor deposition method, such as a sputtering method, a photolithography method, or an inkjet method.
  • the deposition material M inside the crucible 20 is always in contact with the inner wall 50 regardless of the decrease in the deposition material M. Therefore, the deposition device 1 can more uniformly heat the deposition material M in contact with the inner wall 50, which has a higher specific heat than the outer wall 40. Therefore, the manufacturing method of the display device 100 makes the deposition rate of the deposition film more uniform, improves the quality of the deposition film, and improves the characteristics, life, etc. of the light-emitting element 102.
  • FIG. 5 is a schematic cross-sectional view of a deposition apparatus 2 according to this embodiment.
  • the deposition apparatus 2 differs in configuration from the deposition apparatus 1 according to the previous embodiment only in that it includes a crucible 21 instead of the crucible 20.
  • the crucible 21 differs in configuration from the crucible 20 only in that it includes an inner shell 51 instead of the inner shell 50.
  • the inner shell 51 has a tapered portion 52 whose thickness decreases from the end side of the bottom 41 toward the center. Except for the above points, the inner shell 51 has the same configuration as the inner shell 50.
  • the inner shell 51 is in contact with at least a portion of the inner surface of the outer shell 40, and has a higher specific heat than the specific heat of the outer shell 40. Therefore, the deposition device 2 according to this embodiment can further reduce localized heating of the inner surface of the crucible 21, and more stabilize the deposition rate of the deposition film.
  • the inner shell 51 of the crucible 21 has a tapered portion 52
  • the vapor deposition material inside the crucible 21 is concentrated at the center of the crucible 21. Therefore, even when the amount of vapor deposition material inside the crucible 21 is small, the vapor deposition device 2 heats the vapor deposition material more uniformly, making the deposition rate of the vapor deposition film more stable. Furthermore, the vapor deposition material inside the crucible 20 is separated from the side portion 42 of the crucible 20 by the tapered portion 52. Therefore, even when the heating of the side portion 42 of the crucible 21 is insufficient, the vapor deposition device 2 reduces adhesion of the vapor deposition material to the side portion 42 of the inner surface of the crucible 21.
  • FIG. 6 is a schematic cross-sectional view of a deposition apparatus 3 according to this embodiment.
  • the deposition apparatus 3 differs in configuration from the deposition apparatus 2 according to the previous embodiment only in that it includes a crucible 22 instead of the crucible 21.
  • the crucible 22 differs in configuration from the crucible 21 only in that it includes an inner shell 53 instead of the inner shell 51.
  • the inner shell 53 has the tapered portion 52 described above, and a protruding portion 54 that protrudes toward the opening 45 at a position closer to the center than the tapered portion 52. Except for the above, the inner shell 53 has the same configuration as the inner shell 51. For example, the inner shell 53 is in contact with at least a portion of the inner surface of the outer shell 40, and has a higher specific heat than the specific heat of the outer shell 40. Therefore, the deposition device 3 according to this embodiment can further reduce localized heating of the inner surface of the crucible 22, and more stabilize the deposition rate of the deposition film.
  • the deposition material inside the crucible 22 is concentrated on the side of the protruding portion 54.
  • the protruding portion 54 is thicker than the surrounding area, even if the deposition material is concentrated around the protruding portion 54, the protruding portion 54 reduces the increase in the thickness of the deposition material, thereby reducing insufficient heating of the deposition material. Therefore, the deposition device 3 heats the deposition material more uniformly even if the deposition material is concentrated on the center side of the crucible 22, making the deposition rate of the deposition film more stable.
  • FIG. 7 is a schematic cross-sectional view of a vapor deposition apparatus 4 according to this embodiment.
  • the vapor deposition apparatus 4 differs in configuration from the vapor deposition apparatus 1 according to the above-described embodiment 1 only in that it includes a crucible 23 instead of the crucible 20.
  • the crucible 23 differs in configuration from the crucible 20 only in that it includes an inner shell 55 instead of the inner shell 50.
  • the inner shell 55 has at least one partition wall 56 that protrudes into the inside of the crucible 23. Therefore, a portion of the internal space of the crucible 23 on the side of the bottom 41 is divided into multiple spaces by the partition wall 56. As a result, a portion of the deposition material introduced into the inside of the crucible 23 on the side of the bottom 41 is divided by the partition wall 56. Except for the above points, the inner shell 55 has the same configuration as the inner shell 50. For example, the inner shell 55 is in contact with at least a portion of the inner surface of the outer shell 40, and has a specific heat higher than that of the outer shell 40.
  • the crucible 23 When the crucible 23 is heated by the heater section 30, the heat propagated to the inner wall 55 also propagates to the partition wall 56. Therefore, the crucible 23 can heat the deposition material located on the central side, which is farther away from each heater section 30, particularly each side heater 32, through the partition wall 56. Therefore, the deposition device 4 can heat the deposition material more uniformly regardless of the position inside the crucible 23.
  • the partition 56 in this embodiment protrudes in approximately the same direction as the normal direction C of the inner surface of the bottom 41. Therefore, no space is formed in the crucible 23 below the partition 56. Therefore, the deposition device 4 reduces the vaporized deposition material coming into contact with the partition 56 and solidifying, and increases the deposition material that reaches the deposition target. Note that in this embodiment, "approximately the same direction” does not mean that the two are completely the same, but allows for some deviation in the direction of the two, including manufacturing errors, etc.
  • the inner shell 55 has multiple partition walls 56. This allows the deposition device 4 to more efficiently heat the deposition material located toward the center of the crucible 23 through the multiple partition walls 56. Therefore, the deposition device 4 can heat the deposition material more uniformly regardless of the position inside the crucible 23.
  • FIG. 8 is a schematic cross-sectional view of the crucible 23 according to this embodiment.
  • the partition 56 When viewed in the normal direction to the inner surface of the bottom 41, as shown in FIG. 8, the partition 56 extends parallel to one of the multiple sides that define the outer edge of the bottom 41. In particular, the partition 56 extends parallel to the short direction of the outer edge of the bottom 41. Note that in this embodiment, "parallel" does not mean that the two are completely aligned in the same direction, but rather allows for misalignment of the directions of the two, including manufacturing errors, etc.
  • the deposition device 4 can reduce the difference in the heating conditions of the deposition material between the multiple regions, and can heat the deposition material more uniformly.
  • the partition 56 is located between the first and second sides of the multiple sides that define the outer edge of the bottom 41.
  • the partition 56 is located between two sides of the outer edge of the bottom 41 that face each other and run along the longitudinal direction.
  • the deposition device 4 can heat each of the partitioned deposition materials more uniformly by reducing the heat capacity of each of the partitioned deposition materials.
  • the uniform heating of the deposition material in each of the above spaces of the crucible 23 in this embodiment becomes noticeable when the deposition material inside the crucible 23 is consumed and the upper surface of the deposition material falls below the upper end of the partitions 56.
  • FIG. 9 is a schematic cross-sectional view of a deposition apparatus 5 according to this embodiment.
  • the deposition apparatus 5 differs in configuration from the deposition apparatus 4 according to the previous embodiment only in that it includes a crucible 24 instead of the crucible 23.
  • the crucible 24 differs in configuration from the crucible 23 only in that it includes an inner shell 57 instead of the inner shell 55.
  • the inner shell 57 of this embodiment has at least one partition wall 58 that protrudes inwardly into the crucible 24.
  • the partition wall 58 of this embodiment protrudes in a direction different from the normal direction C of the inner surface of the bottom 41.
  • the inner shell 57 has the same configuration as the inner shell 55.
  • the inner shell 57 is at least partially in contact with the inner surface of the outer shell 40, and has a specific heat higher than that of the outer shell 40.
  • the position of the crucible is fixed relative to the vacuum chamber, but this is not limited to the above.
  • the deposition apparatus including each of the deposition devices described above may heat the deposition material while changing the position of the crucible relative to the deposition target to form a deposition film on the deposition target.
  • the deposition material including the material of the deposition film is a meltable material
  • the deposition material may flow inside the crucible as the crucible moves. The flow of the deposition material inside the crucible leads to a decrease in the uniformity of heating of the deposition material.
  • the partition 58 in this embodiment protrudes in a direction different from the normal direction C of the inner surface of the bottom 41, so even if the deposition material, which is a fusible material, flows horizontally and collides with the partition 58, the turbulence caused by the collision is mitigated by the partition 58. As a result, the partition 58 more restricts the flow of the deposition material inside the inner shell 57 in response to the movement of the crucible 24 than the partition 56 described above. Therefore, the deposition device 5 in this embodiment can heat the deposition material more uniformly regardless of the movement of the crucible 24.
  • FIGs. 10A and 10B are schematic cross-sectional views of the crucible 24 according to this embodiment.
  • Fig. 10A shows a schematic cross-sectional view of crucible 24A, which is an example of the crucible 24 according to this embodiment
  • Fig. 10B shows a schematic cross-sectional view of crucible 24B, which is another example of the crucible 24.
  • crucible 24A has partition 58A as partition 58.
  • partition 58A extends along a direction intersecting with any of the sides of bottom 41 among the multiple sides that define the outer edge of bottom 41 when viewed in the normal direction to the inner surface of bottom 41. Therefore, even if the deposition material, which is a meltable material, flows horizontally and collides with partition 58A, the turbulence caused by the collision is mitigated by partition 58A. Therefore, even in deposition device 5 equipped with crucible 24A, the deposition material can be heated more uniformly regardless of the movement of crucible 24A.
  • the partitions 58A are located between two opposing longitudinal sides of the outer edge of the bottom 41. As a result, a portion of the vapor deposition material inside the crucible 24A on the side of the bottom 41 is divided into multiple sections by the partitions 58A.
  • the vapor deposition device 5 equipped with the crucible 24A can therefore heat each of the vapor deposition materials more uniformly by reducing the heat capacity of each of the divided vapor deposition materials.
  • crucible 24B has partition 58B as partition 58.
  • partition 58B extends along a direction intersecting with any of the sides of bottom 41 among the multiple sides that define the outer edge of bottom 41 when viewed in the normal direction of the inner surface of bottom 41. Therefore, even in deposition device 5 equipped with crucible 24B, the deposition material can be heated more uniformly regardless of the movement of crucible 24B.
  • the partition 58B is located on a portion of the outer edge of the bottom 41 from the first side to the second side. Therefore, a portion of the internal space of the crucible 24B on the side of the bottom 41 is not partitioned by the partition 58B and becomes a single space. Therefore, the deposition device 5 equipped with the crucible 24B causes the deposition material to flow inside the crucible 24B, and heat is propagated between distant positions of the crucible 24B, thereby heating the deposition material more uniformly.
  • FIG. 11 is a schematic cross-sectional view of a deposition apparatus 6 according to this embodiment.
  • the deposition apparatus 6 differs in configuration from the deposition apparatus 5 according to the previous embodiment only in that it includes a crucible 25 instead of the crucible 24.
  • the crucible 25 differs in configuration from the crucible 24 only in that it includes an inner shell 59 instead of the inner shell 57.
  • the inner shell 59 according to this embodiment has at least one partition 60 that protrudes into the inside of the crucible 25.
  • the partition 60 according to this embodiment protrudes in a direction different from the normal direction C of the inner surface of the bottom 41.
  • any one of the multiple partitions 60 protrudes in a direction different from the protruding direction of any other partition 60.
  • the inner shell 59 has the same configuration as the inner shell 57.
  • the inner shell 59 is at least partially in contact with the inner surface of the outer shell 40, and has a specific heat higher than that of the outer shell 40.
  • the multiple partitions 60 in this embodiment protrude in different directions, when the vapor deposition material, which is a fusible material, flows horizontally and collides with a partition 60, the direction of flow changes depending on the partition 60 that collides.
  • the partition 60 further reduces turbulence of the vapor deposition material inside the inner shell 59 in response to the movement of the crucible 25, and further restricts the flow of the vapor deposition material. Therefore, the vapor deposition device 6 in this embodiment can heat the vapor deposition material more uniformly regardless of the movement of the crucible 25.
  • FIGS. 12A and 12B are schematic cross-sectional views of the crucible 25 according to this embodiment.
  • FIG. 12A shows a schematic cross-sectional view of crucible 25A, which is an example of the crucible 25 according to this embodiment
  • FIG. 12B shows a schematic cross-sectional view of crucible 25B, which is another example of the crucible 25.
  • the crucible 25A has a partition 60A as the partition 60.
  • any one of the multiple partitions 60A extends in a direction different from the extension direction of any other partition 60A.
  • the deposition device 6 including the crucible 25A further reduces turbulence of the deposition material inside the inner shell 59 in response to the movement of the crucible 25A, and heats the deposition material more uniformly regardless of the movement of the crucible 25A.
  • the partitions 60A are located between two opposing longitudinal sides of the outer edge of the bottom 41. As a result, a portion of the vapor deposition material inside the crucible 25A on the side of the bottom 41 is divided into multiple sections by the partitions 60A.
  • the vapor deposition device 6 equipped with the crucible 25A can therefore heat each of the vapor deposition materials more uniformly by reducing the heat capacity of each of the divided vapor deposition materials.
  • crucible 25B has partition 60B as partition 60.
  • any one of the multiple partitions 60B extends in a direction different from the extension direction of any other partition 60B. Therefore, deposition device 6 equipped with crucible 25B heats the deposition material more uniformly regardless of the movement of crucible 25B.
  • the partition 60B is located on a portion of the outer edge of the bottom 41 from the first side to the second side. Therefore, the vapor deposition material inside the crucible 25B is not divided by the partition 60B but is integrated. Therefore, the vapor deposition device 5 equipped with the crucible 25B causes the vapor deposition material to flow inside the crucible 25B, and heat is propagated between distant positions of the crucible 25B, thereby heating the vapor deposition material more uniformly.
  • the inner shell of the deposition device according to each of the above-mentioned embodiments is detachably attached to the outer shell 40. Therefore, the deposition device according to each embodiment can easily change the inner shell attached to the outer shell 40 depending on the material to be deposited or the deposition target. For example, the deposition device according to each embodiment can easily change the presence or absence or shape of the above-mentioned tapered portion, protrusion, or partition in the inner shell by changing the inner shell attached to the outer shell. Therefore, the deposition device according to each embodiment makes it easy to form a deposition film using a crucible that is more suitable for the material of the deposition material and the deposition target.
  • Vapor deposition apparatus 10
  • Crucible 31
  • Bottom heater (heater) 32
  • Side heater (heater) 40
  • Outer shell 41
  • Bottom portion 42
  • Side portion 45
  • Opening portion 50
  • Inner shell 52
  • Tapered portion 54
  • Protruding portion 56
  • Partition wall 100
  • Display device 102 Light-emitting element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Appareil de dépôt en phase vapeur comprenant un creuset, le creuset comprenant une enveloppe externe et une enveloppe interne. L'enveloppe externe présente des ouvertures pour faire sortir un matériau de dépôt en phase vapeur vers une cible de dépôt en phase vapeur. L'enveloppe interne est en contact avec au moins une partie de la surface interne de la coque externe, et présente une chaleur spécifique supérieure à celle de l'enveloppe externe.
PCT/JP2023/011690 2023-03-24 2023-03-24 Appareil de dépôt en phase vapeur et procédé de production de dispositif d'affichage Pending WO2024201548A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/011690 WO2024201548A1 (fr) 2023-03-24 2023-03-24 Appareil de dépôt en phase vapeur et procédé de production de dispositif d'affichage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/011690 WO2024201548A1 (fr) 2023-03-24 2023-03-24 Appareil de dépôt en phase vapeur et procédé de production de dispositif d'affichage

Publications (1)

Publication Number Publication Date
WO2024201548A1 true WO2024201548A1 (fr) 2024-10-03

Family

ID=92904137

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/011690 Pending WO2024201548A1 (fr) 2023-03-24 2023-03-24 Appareil de dépôt en phase vapeur et procédé de production de dispositif d'affichage

Country Status (1)

Country Link
WO (1) WO2024201548A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004238688A (ja) * 2003-02-06 2004-08-26 Sony Corp 有機発光素子の製造装置、および表示装置の製造システム
WO2009060739A1 (fr) * 2007-11-05 2009-05-14 Ulvac, Inc. Source d'évaporation sous vide et appareil de fabrication d'élément el organique
JP2018104804A (ja) * 2016-12-28 2018-07-05 株式会社半導体エネルギー研究所 製造装置
JP2021183714A (ja) * 2020-05-22 2021-12-02 株式会社アルバック 真空蒸着装置用の蒸着源

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004238688A (ja) * 2003-02-06 2004-08-26 Sony Corp 有機発光素子の製造装置、および表示装置の製造システム
WO2009060739A1 (fr) * 2007-11-05 2009-05-14 Ulvac, Inc. Source d'évaporation sous vide et appareil de fabrication d'élément el organique
JP2018104804A (ja) * 2016-12-28 2018-07-05 株式会社半導体エネルギー研究所 製造装置
JP2021183714A (ja) * 2020-05-22 2021-12-02 株式会社アルバック 真空蒸着装置用の蒸着源

Similar Documents

Publication Publication Date Title
KR100823508B1 (ko) 증발원 및 이를 구비한 증착 장치
JP5409546B2 (ja) 線形蒸発源及びそれを用いた蒸着装置
US20070178225A1 (en) Vapor deposition crucible, thin-film forming apparatus comprising the same, and method of producing display device
KR101127575B1 (ko) 증착 가림막을 가지는 박막 증착 장치
KR101015277B1 (ko) 증발원
JP2007186787A (ja) 蒸着坩堝並びにこれを備えた薄膜形成装置、及び表示装置の製造方法
US20080173241A1 (en) Vapor deposition sources and methods
KR101173645B1 (ko) 가스 분사 유닛 및 이를 구비하는 박막 증착 장치
KR20160112293A (ko) 증발원 및 이를 포함하는 증착장치
JP2009228091A (ja) 蒸着装置
TWI493062B (zh) 用於形成薄膜之沉積設備
JP5568729B2 (ja) 成膜装置および成膜方法
US8882920B2 (en) Thin film deposition apparatus
JP5244635B2 (ja) 有機物蒸着装置
TWI516622B (zh) 蒸鍍裝置
WO2024201548A1 (fr) Appareil de dépôt en phase vapeur et procédé de production de dispositif d'affichage
JP2003253433A (ja) 薄膜形成装置
US20100028534A1 (en) Evaporation unit, evaporation method, controller for evaporation unit and the film forming apparatus
KR101037121B1 (ko) 증착장치 및 증착방법
KR20150081857A (ko) 증착장치용 증발원
JP7444843B2 (ja) 蒸着用坩堝及び蒸着装置
KR200365703Y1 (ko) 유기 박막 증착 장치
JP2003160856A (ja) 蒸着装置と薄膜形成方法およびそれらを用いた表示装置
KR20180112209A (ko) 도가니 분리가 용이한 박막 증착 장치
KR20250086741A (ko) 증발원, 성막 장치, 및 성막 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23930190

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE