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WO2024201439A1 - Sources de lumière non classiques sur puce - Google Patents

Sources de lumière non classiques sur puce Download PDF

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Publication number
WO2024201439A1
WO2024201439A1 PCT/IB2024/053191 IB2024053191W WO2024201439A1 WO 2024201439 A1 WO2024201439 A1 WO 2024201439A1 IB 2024053191 W IB2024053191 W IB 2024053191W WO 2024201439 A1 WO2024201439 A1 WO 2024201439A1
Authority
WO
WIPO (PCT)
Prior art keywords
nanowire
waveguide
light source
classical
classical light
Prior art date
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Pending
Application number
PCT/IB2024/053191
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English (en)
Inventor
Dan Dalacu
Philip Poole
Robin Williams
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National Research Council of Canada
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National Research Council of Canada
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Filing date
Publication date
Application filed by National Research Council of Canada filed Critical National Research Council of Canada
Publication of WO2024201439A1 publication Critical patent/WO2024201439A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1223—Basic optical elements, e.g. light-guiding paths high refractive index type, i.e. high-contrast waveguides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12064—Zinc sulfide (ZnS)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12078—Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Definitions

  • This application relates generally to a set of substantially identical sources of non- classical light, and more particularly to a monolithic set of substantially identical non- classical light sources.
  • non-classical light sources In the field of photonic components, there is a recognized need for what is commonly referred to as non-classical light sources. Quantum information technologies make use of these non-classical light sources for a number of different applications, but a further need has arisen for a set of substantially identical sources of non-classical light.
  • QDs are semiconductor particles that have a size that is typically on the order of a few nanometers, and due to their size can have optical and electrical properties different from those of larger particles. Stimulation of a QD using a first wavelength of light can result in electrons within the QD being excited to a higher energy state. When these electrons fall out of the excited state, the energy is released as light, typically with a different wavelength.
  • the wavelength of the emitted light is typically defined by the size and composition of the QD.
  • the wavelength of the input light can vary based on the composition and design of the QD. In some embodiments, visible and near-infrared light can be used.
  • NV centers are point defects in a substrate such as diamond.
  • Production of an NV center typically involves the irradiation of a portion of the lattice of the substrate followed by an annealing phase.
  • the annealing phase is carried out at temperatures in excess of 700°C.
  • a non-classical light source comprises a silicon base, a silicon dioxide layer atop the silicon base, protrusion and a nanowire.
  • the silicon base has a generally planar surface and may itself be generally planar.
  • the silicon dioxide layer is positioned atop the generally planar surface of the silicon base, and is itself generally planar.
  • the protrusion is comprised is silicon and ascends above the silicon dioxide layer.
  • the nanowire has a quantum dot, and extends from the protrusion.
  • the nanowire is generally parallel to a plane defined by the silicon dioxide layer, and is configured to receive pump light and direct the pump light to the quantum dot.
  • the quantum dot in response to receipt of the pump light generates non-classical light that is directed along the length of the nano wire.
  • the non-classical light source is substantially monolithic in structure.
  • the non-classical light source comprises a waveguide positioned atop of the silicon dioxide layer and aligned with the nanowire to allow for coupling of light from the nanowire into the waveguide.
  • the waveguide is comprised of Silicon Nitride.
  • the nanowire abuts a face of the waveguide, while in others the nanowire overlaps a face of the waveguide. The overlapping of the nanowire and waveguide can allow for evanescent coupling of light.
  • the nanowire and waveguide are arranged to allow for evanescent coupling of the pump light from the waveguide into the nanowire.
  • the nanowire and waveguide are arranged to allow for evanescent coupling of the non-classical light from the nano wire to the waveguide.
  • the nanowire comprises a plurality of quantum dots.
  • the nanowire is comprised of Indium Phosphate.
  • the non-classical light source comprises a second nanowire having a quantum dot extending from a second silicon protrusion ascending above the silicon dioxide layer and being generally parallel to the plane defined by the silicon dioxide layer, the second nanowire for receiving pump light and directing the received pump light to the quantum dot, and for directing non-classical light generated by the quantum dot along a length of the second nanowire.
  • the first and second nanowires are coupled to first and second waveguides respectively.
  • the first and second nanowires are coupled to the first and second waveguides respectively to allow for evanescent coupling of light between the first nanowire and the first waveguide and the second nanowire and the second waveguide.
  • the nano wire is configured to receive a visible or near infrared pump light, and the quantum dot is configured to generate non-classical light in response to receipt of the pump light.
  • the nanowire is further configured to carry the generated non- classical light along its length.
  • a non-classical light source is configured for the stimulation of the quantum dot by other inputs including an electrical input.
  • Figure 1A is a perspective view of a selective area VLS for growing a nanowire
  • Figure IB is a perspective view of the growth of a nanowire with a quantum dot from the selective area of Figure 1A;
  • Figure 2 is a perspective view of a nanowire atop a waveguide
  • Figure 3 is a perspective view of a monolithic structure having a plurality of nanowires with respective waveguides.
  • non-classical light Where light is often described in the context of classical electromagnetism, it is possible to generate light that has characteristics that are best described by a quantized electromagnetic field and quantum mechanics. This light is referred to as non-classical light. As noted above with respect to QDs, it is possible to stimulate the emission of non-classical light through exposing a non-classical light source to defined wavelengths (e.g. visible or near-infrared light for QDs) of light. The wavelength of the emitted light is associated with at least one of the composition, size and shape of the light source.
  • defined wavelengths e.g. visible or near-infrared light for QDs
  • Quantum dots may be embedded within a nanoscale filament, often referred to as a nanowire.
  • the shape of a nanowire can be controlled in manufacturing so that light that enters the filament is directed longitudinally through the filament so that is directed into the QD in a controlled manner.
  • a nanowire having one or more QDs can be manufactured using any of a number of different conventional techniques including a two step core-shell growth process. In such a process, the dot and waveguide can be grown with the photonic structures aligned.
  • the nanowire can be grown using a variety of processes including vapor liquid solid (VLS) epitaxy. This method can be used to grow a nanowire from a defined base.
  • VLS vapor liquid solid
  • FIG. 1A As shown in Figure 1A, as base 100 of silicon dioxide is used. Within base 100, an aperture 102 is defined to expose Indium Phosphate 104. In the middle of the aperture is a small quantity of gold 106. The gold 106 defines the location of the nanowire which will be grown through a VLS process. During the VLS process, insertions of foreign materials can be used to create a QD. The result is seen in Figure IB, in which the SiCL base 100 is shown still showing aperture 102 exposing a layer 104 of InP. The manufacturing process results in the growth of a nanowire 108 under the droplet of gold 106. The insertion of foreign material during the VLS process defines the location of the Quantum Dot 110. It will be readily appreciated that multiple QDs can be created within a single nanowire.
  • a nanowire such as wire 108 can provide for the generation of non-classical light which can be directed into any number of different waveguides.
  • the emitted light can be directed across a free-space gap into an optical fiber.
  • an InP nanowire 112 can be placed atop a silicon nitride waveguide 114 on a SiC base 116.
  • the InP nanowire 112 is tapered, which may allow for an expansion of the optical mode as light travels down the nanowire 112.
  • Light can evanescently couple between the nano wire 112 and the waveguide 114.
  • light can pumped into the nanowire 112 from free space (e.g.
  • lights can be pumped through the waveguide 114 where it can be evanescently coupled into the nanowire 112.
  • the evanescent coupling of the pump light will stimulate the QD, while in the former case the pump light can be directed at the QD (directly or indirectly).
  • the stimulation of a QD within nanowire 112 will result in non classical light emission that is coupled into waveguide 114.
  • the waveguide that receives light from the nanowire can be shaped so that the non-classical light can be directed into a photonic circuit for processing.
  • nano wire as shown in Figures 1A and IB, and its coupling to a waveguide as shown in Figure 2 is a delicate process that involves the growth of nanowires, and then a mechanical process that lifts them and accurately places and aligns them on a waveguide.
  • the nano wire may need bonding agents such as an adhesive that affixes the nanowire to the waveguide so that alignment is not disturbed. So long as the growth process is repeatable, it may be possible to assemble enough nanowire- waveguide pairs to allow for the assembly of a set of substantially identical sources of non-classical light. However, the manufacturing process requires very precise mechanical alignment of nanowires, which are by their nature very small structures.
  • glue or adhesive may be employed to ensure that the nanowire is well affixed to the waveguide, and the optical properties of the glue or adhesive must be selected carefully so that evanescent coupling of light between the waveguide and the nanowire is not impeded.
  • a monolithic construction of a set of nanowires upon a substrate can be performed.
  • the nanowire can be directed towards free-space or a waveguide.
  • the nanowire-waveguide interface can be a butt interface, or it can be designed for evanescent coupling.
  • the structure of such as monolithic element is illustrated in Figure 3.
  • a set of non-classical light sources 150 is shown as monolithically constructed.
  • a generally planar silicon base 152 is overlain with a generally planar silicon dioxide (SiC ) layer 154. Apertures in the SiC layer 154 allow for the protrusion of Si bases 156a-c.
  • Si bases 156a-c may be simply placed upon the SiCh layer 154, which will be understood to be a structure known as silicon on insulator.
  • Nanowires 158 can be grown using a bottom up process. Multiple nanowires can be grown in the same process using the same material inputs, using any number of processes, including those described above.
  • the position of the nanowire can be controlled through lithography by defining the position of elements on the silicon 156 upon which the wire 158 is grown.
  • the growth of a nanowire 158 to be orthogonal to the Si base 156 allows for the nanowire to be effectively horizontal with respect to the SiO2 layer 154.
  • Embedding of the quantum dots within the nanowire 158 allows for the nanowire 158 to act as one of a number of non-classical light sources.
  • the quantum dot is a III-V quantum dot.
  • the growth process of the nanowire 158 can also be optionally controlled to provide a tapered structure. In some embodiments, this tapered structure of nanowire 158 allows for evanescent coupling of light into a waveguide 160.
  • Monolithic structure 150 illustrates three different embodiments for the output light from nanowire 158.
  • Nanowire 158a is configured for outputting the non-classical light into free space, so that it can be captured by an element outside of monolithic chip 150.
  • Nanowire 158b is aligned for butt coupling with waveguide 160b.
  • Waveguide 160b is shown as having a taper so that incident non-classical light can couple into the waveguide 160b and propagate. It should be understood that in some embodiments waveguide 160b and nanowire 158b may be abutting as shown, while in other embodiments they may be separated by free space.
  • Nanowire 158c is aligned so that it overlaps with waveguide 160c. This overlapping allows for evanescent coupling of light between the waveguide 160c and the nanowire 158c.
  • Waveguides 160 can be lithographically built on the SiO2 layer 154 using conventional lithographic techniques. It should be understood that the structures other than the nanowires 158 can be set in place using conventional lithographic processes, allowing for a simplified manufacturing process that will be familiar to those skilled in the art of manufacturing photonic integrated circuits. The growth of the nanowires 158 can then be performed using techniques such as VLS epitaxy as described above. Such a process allows for the growth of a nanowire on components of a photonic integrated circuit (PIC) in a manner that results in secure placement of the nanowire.
  • PIC photonic integrated circuit
  • This can aid in obviating the need for either a previously assembled nanowire to be physically placed on the PIC, or for the nanowire to be secured in place using either glue or any other form of adhesive.
  • This provides a controllable and repeatable process for the manufacture of components in a scalable fashion.
  • stimulation of the QD within nanowire 158 can be achieved through the use of a light pump outside the illustrated monolithic construction 150.
  • the pump light is directly aimed at the nanowire.
  • the pump light may come from the waveguide 160b and 160c respectively.
  • waveguide 160c pump light is evanescently coupled into the nanowire 158c, and is directed towards a QD.
  • the stimulation of the QD with the evanescently coupled pump light causes the generation of non-classical light that is carried by the nanowire 158c towards waveguide 160c, into which it is evanescently coupled.
  • the monolithic structure 150 provides for nanowires 158 to be grown in place so that they can be effectively coupled to a waveguide that captures generated light.
  • the use of a Si base 152 allows for placement of a SiO2 layer 154 with an Si protrusion 156 extending above the surface of the SiO2 layer 154.
  • the geometry of this structure allows for a nanowire 158 with at least one QD to be grown so that it is effectively parallel to the SiO2 layer 154.
  • the nanowire 158 can, in some embodiments, so that it abuts a waveguide 160b, while in other embodiments the nanowire 158 can be grown so that it overlaps with a waveguide 160c so that light can evanescently couple between the two structures.
  • the monolithic structure 150 can be designed so that it has a plurality of nanowires 158 coupled to respective waveguides.
  • each of the nanowires couples to its respective waveguide using the same coupling structure (e.g. free space, butt coupling or evanescent coupling) as the other nanowires.
  • the use of a pumped light source to stimulate the QD within the nanowire is optional.
  • the pump light provided to stimulate the QD within a nanowire may be any of visible light, near infrared light and ultraviolet light. Any light that can induce the emission of non- classical light can be used. The delivery of sufficient energy to cause emission of the non- classical light could, in some embodiments also be achieved through the use of electrical stimulation as a supplement to, or in place of, the use of pumped light.
  • Electrical stimulation of the QD can make use of electricity provided through a set of electrical contacts designed to stimulate the QD to result in generation of non-classical light.
  • any number of different techniques to stimulate non-classical light emission from the QD can be employed.
  • layer 152 has been described above as being a layer of silicon, it should be understood that layer 152 can be formed of other compounds, with appropriate crystallographic properties.
  • layer 152 is a single crystal that has a crystallographic plane that directs growth in a horizontal plane in line with the surface of the crystal. When the base layer 152, this crystallographic plane is understood to be a 111 facet, but other crystal growth structures can be employed.
  • silicon and germanium may be employed.
  • Group III-V InP, gallium arsenide (GaAs), gallium nitride (GaN), aluminum nitride (AIN), and gallium phosphate (GaP) may be employed.
  • Group II- VI Zinc selenide (ZnSe), and Cadmium Telluride (CdTe) can be used. It should be understood that these examples are not intended to be an exhaustive list, but instead only illustrative of different options.
  • Eayer 154 is described as being a silicon dioxide layer. Other materials can be used. Typically this layer 154 will be dielectric and will demonstrate selectivity during growth (e.g. during a VES epitaxy phase, material will not start to grow from layer 154). In addition to silicon dioxide, other materials may include Silicon Nitride (SiN), and Aluminum Oxide (AI2O3).
  • SiN Silicon Nitride
  • AI2O3 Aluminum Oxide
  • nanowires 158 can be formed of other materials.
  • nanowires 158 can be formed of direct bandgap semiconductors that allow for the transmission of both the pump light and the non-classical light generated in the QD.
  • the waveguides 160 are described as being formed of silicon nitride. This is one of a number of materials that could be employed. The selection of a material for waveguide 160 is determined by the wavelength of the light generated by the QD within nanowire 158. Thus, the material of waveguide 160 can be considered to be defined by the composition and dimensions of the QD. The material used to form waveguide 160 should be substantially transparent to the wavelength of the light carried within waveguide 160. For light at or near 1310nm, the waveguide 160 may be formed of silicon, while for light at or near 950nm, silicon nitride may be preferable.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne une source de lumière non classique monolithique qui utilise des nanofils qui sont développés à partir d'une fabrication de silicium sur isolant. Les nanofils sont développés pour être sensiblement horizontaux par rapport au plan de l'isolant, ce qui leur permet d'être couplés à des guides d'ondes. Un point quantique à l'intérieur du nanofil peut générer la lumière non classique en réponse à une excitation par l'intermédiaire d'un stimulus externe tel qu'une lumière de pompage. La lumière non classique peut être couplée dans un guide d'ondes ou transmise à travers l'espace libre. La nature monolithique de la source de lumière permet d'utiliser des procédés lithographiques pour créer une grande partie de la structure de la source de lumière avant que des nanofils soient développés de manière épitaxiale en place.
PCT/IB2024/053191 2023-03-30 2024-04-02 Sources de lumière non classiques sur puce Pending WO2024201439A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202363455769P 2023-03-30 2023-03-30
US63/455,769 2023-03-30

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WO2024201439A1 true WO2024201439A1 (fr) 2024-10-03

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110249322A1 (en) * 2007-04-25 2011-10-13 Shih-Yuan Wang Nanowire-based opto-electronic device
US20110303897A1 (en) * 2007-04-18 2011-12-15 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US20140256534A1 (en) * 2011-09-28 2014-09-11 University Of Connecticut Metal oxide nanorod arrays on monolithic substrates
WO2018164656A1 (fr) * 2017-03-06 2018-09-13 Intel Corporation Dispositifs à nanofils quantiques
US11536897B1 (en) * 2020-01-30 2022-12-27 Psiquantum, Corp. Multi-chip photonic quantum computer assembly with optical backplane interposer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110303897A1 (en) * 2007-04-18 2011-12-15 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US20110249322A1 (en) * 2007-04-25 2011-10-13 Shih-Yuan Wang Nanowire-based opto-electronic device
US20140256534A1 (en) * 2011-09-28 2014-09-11 University Of Connecticut Metal oxide nanorod arrays on monolithic substrates
WO2018164656A1 (fr) * 2017-03-06 2018-09-13 Intel Corporation Dispositifs à nanofils quantiques
US11536897B1 (en) * 2020-01-30 2022-12-27 Psiquantum, Corp. Multi-chip photonic quantum computer assembly with optical backplane interposer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ARAKAWA, YASUHIKO ET AL.: "Silicon photonics for next generation system integration platform", IEEE COMMUNICATIONS MAGAZINE, vol. 51, no. 3, 14 March 2013 (2013-03-14), pages 72 - 77, XP011497169, Retrieved from the Internet <URL:https:ps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber-6476868> DOI: 10.1109/MCOM.2013.6476868 *

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