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WO2024261823A1 - Suscepteur en céramique - Google Patents

Suscepteur en céramique Download PDF

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Publication number
WO2024261823A1
WO2024261823A1 PCT/JP2023/022628 JP2023022628W WO2024261823A1 WO 2024261823 A1 WO2024261823 A1 WO 2024261823A1 JP 2023022628 W JP2023022628 W JP 2023022628W WO 2024261823 A1 WO2024261823 A1 WO 2024261823A1
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WO
WIPO (PCT)
Prior art keywords
electrode
ceramic
distance
hole
ceramic plate
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Pending
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PCT/JP2023/022628
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English (en)
Japanese (ja)
Inventor
紘巨 上田
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NGK Insulators Ltd
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NGK Insulators Ltd
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Publication date
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Priority to PCT/JP2023/022628 priority Critical patent/WO2024261823A1/fr
Priority to JP2024519949A priority patent/JP7709605B2/ja
Publication of WO2024261823A1 publication Critical patent/WO2024261823A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a ceramic susceptor.
  • Ceramic heaters are used as support stages to uniformly control the temperature of wafers.
  • a widely used ceramic heater of this type comprises a ceramic plate on which the wafer is placed and a cylindrical ceramic shaft attached to the ceramic plate.
  • Ceramic plates generally have a configuration in which internal electrodes such as heater electrodes, RF electrodes, and electrostatic chuck (ESC) electrodes are embedded inside a ceramic base made of aluminum nitride (AlN) or the like, which has excellent heat and corrosion resistance.
  • AlN aluminum nitride
  • Patent Document 1 JP 2010-42967 A discloses a ceramic member in which a ceramic sintered body having a thermal expansion coefficient equivalent to that of yttria and the yttria sintered body are sintered together with a conductive member sandwiched therebetween, and proposes forming an opening for measuring the temperature of the substrate in the ceramic sintered body by drilling, and measuring the temperature of the substrate through the opening with a temperature measuring device via the yttria sintered body. With this configuration, the temperature measuring device is isolated from the process gas atmosphere by the yttria sintered body, so that deterioration of the temperature measuring device can be prevented.
  • Patent Document 2 JP 2001-148371 A discloses an electrostatic chucking device equipped with a dielectric body in which an chucking electrode and a heater are embedded, and has a temperature measuring device that measures the temperature of the object to be processed on the dielectric body and the temperature of the dielectric body.
  • This dielectric has a bottomed hole that exposes the dielectric at its bottom, and an infrared receiver attached to an optical path inserted into the bottomed hole measures the amount of infrared light emitted from the dielectric, making it possible to measure the temperature of the dielectric.
  • thermocouple holes bottomed holes
  • the internal electrode e.g., RF electrode
  • the formation of these cracks is due to the fact that the surface of the ceramic plate is exposed to high temperatures (e.g., 600°C in the case of plasma CVD) in the film formation chamber during the film formation process, causing a temperature distribution and resulting thermal expansion differences between the high-temperature surface of the ceramic plate and the lower-temperature back surface of the ceramic plate, resulting in excessive stress concentration near the bottom of the hole.
  • thermocouple inserted into the thermocouple hole.
  • thermocouple hole inserted into the thermocouple hole.
  • the ceramic susceptor of any one of claims 1 to 6 further comprising a first rod connected to the first electrode and extending into the interior space, and a second rod connected to the second electrode and extending into the interior space.
  • FIG. 1 is a schematic cross-sectional view showing an example of a ceramic susceptor according to the present invention.
  • FIG. 2 is a schematic cross-sectional view showing an example of a thermocouple hole of a ceramic susceptor according to the present invention.
  • FIG. 4 is a schematic cross-sectional view showing another example of a thermocouple hole of a ceramic susceptor according to the present invention.
  • FIG. 11 is a schematic cross-sectional view showing an example of a thermocouple hole in a ceramic susceptor according to a comparative embodiment.
  • FIG. 1 is a process diagram showing a procedure of a thermal shock test.
  • 1 is an X-ray CT image of a thermocouple hole in the test piece produced in Example 1.
  • 1 is an X-ray CT image of a thermocouple hole in a test piece produced in Example 2 (comparative).
  • the ceramic susceptor according to the present invention is a ceramic platform for supporting a wafer in a semiconductor manufacturing device.
  • the ceramic susceptor according to the present invention is a ceramic heater for a semiconductor film deposition device.
  • film deposition devices include CVD (chemical vapor deposition) devices (e.g., thermal CVD devices, plasma CVD devices, photo CVD devices, and MOCVD devices) and PVD (physical vapor deposition) devices, with plasma CVD devices being particularly preferred.
  • the thermocouple hole 16 is a bottomed hole formed in the ceramic plate 12 from a position facing the internal space S of the second surface 12b to a depth position between the first electrode 18 and the second electrode 20. As partially shown upside down in Figures 2 and 3, the thermocouple hole 16 has an R shape with a radius of curvature of 0.10 mm or more on the bottom periphery 16a (see Figure 2) or bottom 16b (see Figure 3) when viewed in cross section in a direction perpendicular to the central axis of the thermocouple hole 16, and the diameter of the thermocouple hole 16 is 0.20 mm or more.
  • thermocouple hole 16 provided in the ceramic plate 12 By configuring the thermocouple hole 16 provided in the ceramic plate 12 to have the above-mentioned R shape and diameter, it is possible to suppress the occurrence of cracks between the hole bottom (i.e., the bottom periphery 16a and bottom 16b, especially the bottom periphery 16a) and the internal electrode (i.e., the first electrode 18 and the second electrode 20, especially the first electrode 18).
  • cracks may occur between the bottom of the hole and an internal electrode (e.g., an RF electrode) during the film forming process.
  • an internal electrode e.g., an RF electrode
  • the formation of these cracks is believed to be due to the fact that the surface of the ceramic plate is exposed to high temperatures (e.g., 600°C in the case of plasma CVD) in the film forming chamber during the film forming process, which causes a temperature distribution and a thermal expansion difference between the high-temperature surface of the ceramic plate and the lower-temperature back surface of the ceramic plate, resulting in excessive concentration of stress near the bottom of the hole.
  • high temperatures e.g. 600°C in the case of plasma CVD
  • thermocouple hole 116 in the ceramic plate 112 if the bottom outer periphery 116a and bottom 116b of the thermocouple hole 116 in the ceramic plate 112 are angular and not rounded (when viewed in cross section in a direction perpendicular to the central axis of the thermocouple hole 116), it is believed that cracks are more likely to form due to excessive concentration of stress in the angular part of the bottom of the hole.
  • thermocouple hole 16 by forming the thermocouple hole 16 to have the above-mentioned R-shape (i.e., a rounded shape) and diameter, it is possible to suppress excessive concentration of stress at a local position at the bottom of the hole (i.e., disperse the stress), thereby suppressing the occurrence of cracks between the bottom of the hole and the internal electrode.
  • R-shape i.e., a rounded shape
  • the ceramic plate 12 is not particularly limited except for the configuration of the thermocouple holes 16, and may have the same configuration as ceramic plates used in known ceramic heaters.
  • the main portion of the ceramic plate 12 other than the first electrode 18 and second electrode 20 i.e., the ceramic base
  • the preferred shape of the ceramic plate 12 is a disk.
  • the planar shape of the disk-shaped ceramic plate 12 does not have to be a perfect circle, and may be an incomplete circle with a portion missing, such as an orientation flat.
  • the size of the ceramic plate 12 can be determined appropriately according to the diameter of the wafer for which it is intended to be used, and is not particularly limited, but if it is a circle, the diameter is typically 150 to 450 mm, for example about 300 mm.
  • the first surface 12a of the ceramic plate 12 may be provided with protrusions (not shown).
  • the protrusions are preferably arranged at equal intervals from one another on the first surface 12a of the ceramic plate 12.
  • the shape of each protrusion is not particularly limited, but is preferably cylindrical.
  • the diameter of each protrusion is not particularly limited, but is preferably 0.1 to 8 mm, more preferably 0.5 to 5 mm, even more preferably 0.5 to 4 mm, and particularly preferably 0.70 to 2.54 mm.
  • the protrusions are preferably integrally formed with the ceramic plate 12 by embossing or the like. Therefore, like the ceramic plate 12, the protrusions are preferably made of aluminum nitride.
  • the height of the protrusions is not particularly limited, but is preferably 0.001 to 0.1 mm, more preferably 0.005 to 0.08 mm, even more preferably 0.01 to 0.05 mm, and particularly preferably 0.01 to 0.03 mm.
  • the distance between the central axes of adjacent protrusions is preferably 4 to 30 mm, more preferably 5 to 26 mm, even more preferably 7 to 26 mm, and particularly preferably 7 to 15 mm.
  • a first electrode 18 is embedded in the ceramic plate 12 at a depth position near the first surface 12a.
  • the first electrode 18 may be any electrode depending on the function required for the ceramic susceptor 10, but preferably includes an RF electrode.
  • the RF electrode enables film formation by a plasma CVD process by applying high frequency.
  • cracks tend to occur easily when a film is formed by a plasma CVD process using an RF electrode.
  • the first electrode 18 is an RF electrode, the advantage of the crack suppression effect of the present invention can be most enjoyed.
  • the first electrode 18 is not limited to an RF electrode, and may be other electrodes such as a DC electrode or an ESC electrode.
  • the ESC electrode is an abbreviation for an electrostatic chuck (ESC) electrode, and is also called an electrostatic electrode.
  • the ESC electrode may be used as an RF electrode by applying high frequency to the ESC electrode.
  • the ceramic susceptor 10 preferably further includes a first rod 24 connected to the first electrode 18 and extending into the internal space S.
  • the first rod 24 is connected to an external power source (not shown), such as an RF power source, via the internal space S of the ceramic shaft 14, thereby allowing power to be supplied to the first electrode 18.
  • a second electrode 20 is embedded at a depth position near the second surface 12b of the ceramic plate 12.
  • the second electrode 20 can also be any electrode depending on the function required of the ceramic susceptor 10, but preferably includes a heater electrode.
  • the heater electrode is not particularly limited, but can be, for example, a conductive coil wired in a single stroke across the entire surface of the ceramic plate 12.
  • the heater electrode is not limited to a coil, and can be, for example, a ribbon (a long, thin plate) or a mesh.
  • the ceramic susceptor 10 preferably further includes a second rod 26 connected to the second electrode 20 and extending into the internal space S.
  • the second rod 26 is connected to an external power source (not shown) such as a heater power source through the internal space S of the ceramic shaft 14, thereby allowing power to be supplied to the second electrode 20.
  • an external power source not shown
  • the second rod 26 is connected to both ends of the heater electrode as heater rods for power supply, and when power is supplied from the heater power source, the heater electrode generates heat to heat the wafer placed on the first surface 12a.
  • the ceramic shaft 14 is a cylindrical shaft attached to the second surface 12b of the ceramic plate 12, and may have the same configuration as ceramic shafts used in known ceramic heaters.
  • the ceramic shaft 14 has an internal space S for accommodating the first rod 24 and the second rod 26.
  • the ceramic shaft 14 is preferably made of the same ceramic material as the ceramic plate 12. Therefore, the ceramic shaft 14 is preferably made of aluminum nitride.
  • the upper end surface of the ceramic shaft 14 is preferably joined to the second surface 12b of the ceramic plate 12 by solid-state bonding or diffusion bonding.
  • the outer diameter of the ceramic shaft 14 is not particularly limited, and is, for example, about 40 mm.
  • the inner diameter of the ceramic shaft 14 (diameter of the internal space S) is also not particularly limited, and is, for example, about 36 mm.
  • the thermocouple hole 16 is a bottomed hole formed in the ceramic plate 12 from a position facing the internal space S of the second surface 12b to a depth position between the first electrode 18 and the second electrode 20.
  • the thermocouple hole 16 When viewed in cross section perpendicular to its central axis, the thermocouple hole 16 has an R-shape on the bottom outer periphery 16a (see FIG. 2) or the bottom 16b (see FIG. 3). That is, the thermocouple hole 16 may have an R-shape formed on the outer periphery (i.e., the bottom outer periphery 16a) of the flat bottom 16b as shown in FIG. 2, or the bottom 16b itself may have an R-shape as shown in FIG. 3.
  • the bottom 16b and bottom outer periphery 16a of the thermocouple hole 16 do not have an angular shape as shown in FIG. 4.
  • the radius of curvature of the R-shape on the bottom outer periphery 16a or bottom 16b of the thermocouple hole 16 is 0.10 mm or more, preferably 0.15 mm to 1.50 mm, and more preferably 0.20 to 1.00 mm. This makes it possible to suppress the occurrence of cracks between the bottom of the hole and the internal electrode.
  • the diameter of the thermocouple hole 16 is 0.20 mm or more, preferably 0.30 to 3.00 mm, and more preferably 0.40 to 2.00 mm. Within this range, the size required for inserting the thermocouple 22 is ensured, while the occurrence of cracks can be further suppressed in combination with the radius of curvature of the R-shape.
  • the depth of the thermocouple hole 16 is not particularly limited as long as the bottom 16b of the thermocouple hole 16 is located at a depth between the first electrode 18 and the second electrode 20, but is preferably 10.0 to 14.0 mm, and more preferably 11.2 to 13.5 mm. In this case, the depth of the thermocouple hole 16 is the distance from the second surface 12b to the bottom 16b.
  • the distance B from the bottom 16b of the thermocouple hole 16 to the first electrode 18 is longer than the distance A from the first surface 12a to the first electrode 18 (i.e., A ⁇ B).
  • the distance B from the bottom 16b of the thermocouple hole 16 to the first electrode 18 is defined as the separation distance between the bottom 16b and the first electrode 18 (in the thickness direction of the ceramic plate 12) as shown in FIG. 1.
  • the first electrode 18 e.g., an RF electrode
  • insulation breakdown occurs between the first electrode 18 and the first surface 12a due to arcing
  • the distance B the occurrence of insulation breakdown between the bottom of the hole and the internal electrode can be more effectively prevented.
  • the distance C from the bottom 16b of the thermocouple hole 16 to the second electrode 20 is longer than the distance A from the first surface 12a to the first electrode 18 (i.e., A ⁇ C).
  • the distance C from the bottom 16b of the thermocouple hole 16 to the second electrode 20 is defined as the separation distance between the bottom 16b and the second electrode 20 (in the thickness direction of the ceramic plate 12) as shown in FIG. 1.
  • the first electrode 18 e.g., an RF electrode
  • insulation breakdown occurs between the first electrode 18 and the first surface 12a due to arcing
  • the distance C the occurrence of insulation breakdown between the bottom of the hole and the internal electrode can be more effectively prevented.
  • distance B is longer than distance A (i.e., A ⁇ B) and distance C is longer than distance A (i.e., A ⁇ C).
  • the ceramic susceptor 10 may further include a thermocouple 22 that is inserted into the thermocouple hole 16.
  • the other end of the thermocouple 22 is connected to a temperature measuring device (not shown). In this way, the temperature of the bottom 16b of the thermocouple hole 16 can be measured, and thereby the temperature of the wafer placed on the first surface 12a of the ceramic plate 12 can be indirectly measured or estimated.
  • Examples 1 and 2 (1) Preparation of ceramic plate Y 2 O 3 powder was added as a sintering aid to AlN raw material powder, and mixed in a ball mill to obtain a mixed powder slurry. At this time, Y 2 O 3 was added so that it was 5 mass% with respect to the entire mixed powder. The obtained mixed powder slurry was granulated by spray drying. Next, a disk-shaped molded body was produced using the granules of the mixed powder. At this time, a first electrode 18 (RF electrode) and a second electrode 20 (heater electrode) were embedded in the mixed powder and mechanically pressed to obtain a molded body with these electrodes embedded. An AlN sintered body was produced by hot-pressing this molded body.
  • the hot-pressing was performed under the following conditions: maximum temperature during firing (sintering temperature): 1850 to 1890°C, holding time at the firing temperature: 2 hours, pressing pressure: 20 MPa, and atmosphere: nitrogen atmosphere.
  • the obtained AlN sintered body was processed by rotary surface grinding to obtain a ceramic plate. From the obtained ceramic plate, rectangular parallelepiped test pieces (length 14 mm, width: 14 mm, thickness: 18 mm) were cut out and drilled to form thermocouple holes 16, 116 having a bottom outer periphery 16a with an R-shape with a radius of curvature of about 0.5 mm as shown in Fig.
  • test pieces No. 1, 2 and 3 three test pieces of aluminum nitride ceramic plate 12 with first electrode 18 and second electrode 20 embedded therein were prepared for each example (hereinafter referred to as test pieces No. 1, 2 and 3).
  • the distances A, B and C in the test piece of the ceramic plate 12 thus prepared were as follows: Distance A from the first surface 12a to the first electrode 18: 0.9 mm Distance B from the bottom 16b of the thermocouple hole 16 to the first electrode 18: 2.1 mm Distance C from the bottom 16b of the thermocouple hole 16 to the second electrode 20: 6.4 mm
  • the test piece of the ceramic plate 12 was placed on a heater 30 kept at 550° C. and heated.
  • the first surface 12a of the ceramic plate 12 which is the side where the thermocouple hole 16 is not formed, was arranged to be in contact with the heater 30.
  • the test piece heated to about 440° C. in this way was immersed from the first surface 12a into water (room temperature) in a water tank 32, thereby generating a temperature difference in the thickness direction of the test piece.
  • the temperature of the test piece immediately before being immersed in water was about 440° C., and the difference between the water temperature and the test piece temperature was about 410° C.
  • FIG. 6 shows an X-ray CT image of the test piece No. 1 of Example 1
  • FIG. 7 shows an X-ray CT image of the test piece No. 1 of Example 2 (comparison).
  • the X-ray CT images were analyzed to measure the radius of curvature of the bottom outer periphery, R L on the left side of the cross section and R R on the right side of the cross section (see FIG. 6 ). The results are shown in Table 1.
  • Example 2 Comparative Example which did not have an R shape
  • the crack occurrence rate was 33%, and as shown in Figure 7, in Test Piece No. 1 of Example 2, cracks occurred between the bottom outer periphery of the thermocouple hole (see “Corner” in the figure) and the internal electrode.
  • Example 1 Example 1 which had an R shape with a curvature radius of 0.10 mm or more on the bottom outer periphery and a thermocouple hole with a diameter of 0.20 mm or more
  • the crack occurrence rate was 0%, and the occurrence of cracks between the bottom of the hole and the internal electrode was suppressed when a thermal shock was applied.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)

Abstract

La présente invention concerne un suscepteur en céramique comprenant des électrodes internes et un trou de thermocouple dans une plaque céramique tout en étant apte à supprimer l'apparition de fissures entre le fond du trou et les électrodes internes. Ce suscepteur en céramique comprend : une plaque en céramique en forme de disque ayant une première surface pour le montage d'une tranche et une seconde surface opposée à la première surface, avec une première électrode intégrée à une position plus proche en profondeur de la première surface et une seconde électrode intégrée à une position plus proche en profondeur de la seconde surface ; une tige cylindrique en céramique fixée à la seconde surface de la plaque en céramique et ayant un espace interne ; et un trou de thermocouple formé dans la plaque en céramique à partir d'une position alignée avec l'espace interne de la seconde surface jusqu'à une position en profondeur entre la première électrode et la seconde électrode. Le trou de thermocouple a une forme R avec un rayon de courbure de 0,10 mm ou plus sur le fond ou la périphérie externe de celui-ci lorsqu'il est vu dans une direction de section transversale perpendiculaire à l'axe central du trou de thermocouple, et le trou de thermocouple a un diamètre de 0,20 mm ou plus.
PCT/JP2023/022628 2023-06-19 2023-06-19 Suscepteur en céramique Pending WO2024261823A1 (fr)

Priority Applications (2)

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PCT/JP2023/022628 WO2024261823A1 (fr) 2023-06-19 2023-06-19 Suscepteur en céramique
JP2024519949A JP7709605B2 (ja) 2023-06-19 2023-06-19 セラミックサセプタ

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230058A (ja) * 1999-11-30 2001-08-24 Ibiden Co Ltd セラミックヒータ
JP2003224056A (ja) * 2002-01-29 2003-08-08 Kyocera Corp ウエハ加熱装置
JP2005032842A (ja) * 2003-07-08 2005-02-03 Ibiden Co Ltd 電極構造およびセラミック接合体
JP2005228834A (ja) * 2004-02-12 2005-08-25 Ibiden Co Ltd プラズマ発生装置用電極埋設部材
WO2019088203A1 (fr) * 2017-11-02 2019-05-09 日本碍子株式会社 Élément pour appareils de production de semi-conducteurs, son procédé de production, et sa matrice de moulage
JP2019165193A (ja) * 2018-03-14 2019-09-26 Toto株式会社 静電チャック

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4683775B2 (ja) * 2001-07-10 2011-05-18 京セラ株式会社 ウエハ載置ステージ及びそれを用いた半導体製造装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230058A (ja) * 1999-11-30 2001-08-24 Ibiden Co Ltd セラミックヒータ
JP2003224056A (ja) * 2002-01-29 2003-08-08 Kyocera Corp ウエハ加熱装置
JP2005032842A (ja) * 2003-07-08 2005-02-03 Ibiden Co Ltd 電極構造およびセラミック接合体
JP2005228834A (ja) * 2004-02-12 2005-08-25 Ibiden Co Ltd プラズマ発生装置用電極埋設部材
WO2019088203A1 (fr) * 2017-11-02 2019-05-09 日本碍子株式会社 Élément pour appareils de production de semi-conducteurs, son procédé de production, et sa matrice de moulage
JP2019165193A (ja) * 2018-03-14 2019-09-26 Toto株式会社 静電チャック

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JPWO2024261823A1 (fr) 2024-12-26

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