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WO2024245506A1 - Lentille à immersion solide, procédé de production d'une lentille à immersion solide, et dispositif et procédé pour une mesure à résolution spatiale d'une variable physique d'un échantillon à l'aide de la lentille à immersion solide - Google Patents

Lentille à immersion solide, procédé de production d'une lentille à immersion solide, et dispositif et procédé pour une mesure à résolution spatiale d'une variable physique d'un échantillon à l'aide de la lentille à immersion solide Download PDF

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Publication number
WO2024245506A1
WO2024245506A1 PCT/DE2024/100493 DE2024100493W WO2024245506A1 WO 2024245506 A1 WO2024245506 A1 WO 2024245506A1 DE 2024100493 W DE2024100493 W DE 2024100493W WO 2024245506 A1 WO2024245506 A1 WO 2024245506A1
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Prior art keywords
solid
state
immersion lens
quantum sensors
sensor layer
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German (de)
English (en)
Inventor
Dominik Benjamin BUCHER
Robin Derek Allert
Martin SCHALK
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Quantumdiamonds GmbH
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Quantumdiamonds GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N24/00—Investigating or analyzing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
    • G01N24/10—Investigating or analyzing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects by using electron paramagnetic resonance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/24—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/26—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux using optical pumping
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/02—Objectives
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/60—Arrangements or instruments for measuring magnetic variables involving magnetic resonance using electron paramagnetic resonance

Definitions

  • Solid-state immersion lens for producing a solid-state immersion lens, device and method for a spatially resolved measurement of a physical quantity of a sample with the solid-state immersion lens
  • the invention relates to a solid-state immersion lens for a spatially resolved measurement of a physical quantity of a sample.
  • the solid-state immersion lens has a base body, a sensor layer which is designed to be in contact with the sample, and a plurality of solid-state quantum sensors.
  • the invention further relates to a method for producing a solid-state immersion lens which has solid-state quantum sensors.
  • the invention also relates to a device and a method for a spatially resolved measurement of a physical quantity of a sample which have a solid-state immersion lens with a plurality of solid-state quantum sensors.
  • the spatially resolved measurement of magnetic fields is an essential instrument for physics and the life sciences.
  • the applications range from measurements of biomagnetism to understanding the exotic spin behavior in two-dimensional materials.
  • Quantum sensors in solids such as the nitrogen vacancy center (NV center) in diamonds, have shown extraordinary potential to revolutionize sensor-based technologies in recent years.
  • the application areas range from biomarker detection in medicine to GPS-denied navigation or chemical analysis. All of these applications require the highest possible sensitivity for commercial success.
  • a possible process for fabricating macroscopic NV-doped SILs was described in Siyushev, P. et al. Monolithic diamond optics for single photon detection. Appl. Phys. Lett.97, 241902 (2010).
  • a solid-state immersion lens (SIL) made of diamond was fabricated as follows: Homoepitaxial chemical vapor deposition (CVD) of diamond was performed using a selected high pressure and high temperature diamond that was machined prior to growth to minimize the dislocation density in the CVD diamond. A two-step chemical process was then applied to create a CVD layer with a total thickness of about 2.3 mm, with the first layer containing ⁇ 0.2 ppm of substituted nitrogen. The last layer with a thickness of ⁇ 0.6 mm was fabricated with a significantly reduced nitrogen concentration of ⁇ 5 ppb to reduce the number of native NV defects.
  • CVD Homoepitaxial chemical vapor deposition
  • a two-step chemical process was then applied to create a CVD layer with a total thickness of about 2.3 mm, with the first layer containing ⁇ 0.2 ppm of substituted nitrogen.
  • the last layer with a thickness of ⁇ 0.6 mm was fabricated with a significantly reduced nitrogen concentration of ⁇ 5 ppb to reduce the number of native NV
  • the SIL was then fabricated from this CVD diamond sample, with the flat surface consisting of the high-purity layer (sensor layer) aligned along a ⁇ 100>, ⁇ 110> or ⁇ 111> crystal axis.
  • a SIL with a radius of 1.0 mm was produced, the flatness of which is better than 10 nm (rms), measured with the atomic force microscope.
  • the object of the invention was to provide an improved measurement of a physical quantity of a sample. This object is solved by the subject matter of the independent claims.
  • the present invention describes a new idea for high- or super-resolution imaging of a physical quantity (for example a magnetic field) using quantum sensors in solid-state immersion lenses, which achieves a high spatial resolution while maintaining a wide field of view.
  • a solid-state immersion lens is provided for a spatially resolved measurement of one or more physical quantities, optionally a magnetic field, of a sample. The measurement of several physical quantities can take place at the same time or simultaneously, for example by using solid-state quantum sensors of different types.
  • solid-state quantum sensors can be provided in the solid-state immersion lens, each of which reacts to a different physical quantity.
  • the solid-state immersion lens comprises a base body, a sensor layer which is designed to be in contact with the sample, and a plurality of solid-state quantum sensors.
  • the solid-state quantum sensors are designed to absorb and/or emit light, in particular in one or more wavelength ranges, differently depending on the physical quantity to be measured at the location of the respective solid-state quantum sensor.
  • a density of the solid-state quantum sensors in the sensor layer is greater than a density of the solid-state quantum sensors in the base body.
  • a method for producing a (macroscopic) solid-state immersion lens which has solid-state quantum sensors comprises the steps of: producing a base body of the Solid-state immersion lens with a first density of solid-state quantum sensors and applying or growing a sensor layer on the base body, wherein the sensor layer has a second density of solid-state quantum sensors that is greater than the first density.
  • a device designed for a spatially resolved measurement of a physical quantity, optionally a magnetic field, of a sample comprises a solid-state immersion lens with a plurality of solid-state quantum sensors, optionally as described here, a light source for illuminating the solid-state quantum sensors and a wide-field microscope for imaging the solid-state quantum sensors.
  • a method for the spatially resolved measurement of a physical quantity, optionally a magnetic field, of a sample comprises the steps of: placing a solid-state immersion lens with a plurality of solid-state quantum sensors, optionally as described here, imaging the solid-state quantum sensors using wide-field microscopy and determining the spatially resolved physical quantity, optionally the magnetic field, based on the image of the solid-state quantum sensors.
  • the advantage of the invention is that the solid-state quantum sensors can be imaged using wide-field microscopy, i.e. using a wide-field microscope. This allows a simpler design of the microscope or the image, since no confocal microscope or similar microscopes, which require increased structural effort, have to be used.
  • all solid-state quantum sensors can be imaged simultaneously, so that, for example, a spatially resolved measurement of the physical quantity of the sample can be carried out more quickly. This can be helpful when the physical quantity to be measured fluctuates rapidly (e.g. magnetic and/or electric fields with high frequencies) and a high spatial resolution is still desired.
  • a solid-state immersion lens By using a solid-state immersion lens, a high spatial resolution can still be achieved.
  • the wide-field microscope can also be understood as a reflected light microscope.
  • the beam path of the wide-field microscope cannot have an aperture (also called a pinhole) that serves to select a layer along the z-axis or optical axis of the image, as is common in confocal microscopy. In this way, the structure can be simplified and/or the light yield increased.
  • the solid-state immersion lens is characterized by the fact that it has solid-state quantum sensors essentially exclusively in the sensor layer and the base body is essentially free of solid-state quantum sensors.
  • This enables the use of wide-field microscopy, since solid-state quantum sensors in the base body, as is common in the prior art, have the Do not affect the imaging of the solid-state quantum sensors.
  • the absence of solid-state quantum sensors in the base body allows the imaging of the solid-state quantum sensors in the sensor layer using wide-field microscopy, since there is no superposition of signals from the sensor layer with signals from the base body.
  • the imaging of the solid-state quantum sensors of the solid-state immersion lens requires little or no spatial resolution in a direction perpendicular to the extent of the sample (i.e.
  • Solid-state quantum sensors such as the nitrogen vacancy (NV) center in diamond, are a leading modality for sensitive, spatially resolved imaging of microscopic magnetic fields or other physical quantities (such as temperature or temperature distribution and/or electric fields) with a large field of view.
  • Solid-state quantum sensors operate under a wide range of conditions, from cryogenic to well above room temperature, and can be used as broadband detectors (e.g.
  • a full vector magnetic field (or a vector field of another physical quantity) can be measured by exploiting the distribution of orientations of the solid-state quantum sensors along the four crystallographic directions of the solid-state immersion lens.
  • the sensitivity e.g. for magnetic fields, electric fields and/or temperature distributions
  • the spatial resolution are determined by the number of solid-state quantum sensors in the measurement volume, the resonance linewidth, the resonance spin-state fluorescence contrast and the collected fluorescence intensity of the solid-state quantum sensors.
  • magnetic field microscopy or other physical quantities using solid-state quantum sensors can be adapted and/or optimized for numerous applications in different research areas.
  • typical requirements include good sensitivity (e.g. for magnetic fields, electric fields and/or temperature distributions) within a defined frequency range, high spatial resolution, a large field of view, quantitative vector magnetometry, a dynamic frequency range and flexibility with respect to external parameters (such as external electric and magnetic fields and/or the temperature during the measurement).
  • magnetic field microscopy in geosciences and cell biology generally requires high sensitivity to direct current (DC) magnetic fields and operation at room temperature.
  • DC direct current
  • magnetic field imaging in microelectronics may require magnetic field frequency sensitivity up to the GHz range. All three applications benefit significantly from higher spatial resolution, which extends the information content, and a wide field of view, which enables fast parallel measurements. With the current state of the art, a compromise must be found between these two parameters, which enables either spatial resolution below the diffraction limit with single point measurements or a wide field of view with diffraction-limited resolution.
  • the invention represents a new approach to magnetic field measurement or the measurement of other physical quantities, with which spatial resolution below the conventional diffraction limit (super-resolution) can be achieved and/or where the field of view can be several tens of micrometers. This is achieved by the material of the solid-state immersion lens having a high refractive index.
  • the field of view has, for example, a radius or side length of 10 ⁇ m, 20 ⁇ m, 30 ⁇ m, 40 ⁇ m, 50 ⁇ m, 60 ⁇ m, 70 ⁇ m, 80 ⁇ m, 90 ⁇ m or 100 ⁇ m.
  • the field of view can be, for example, 1000 ⁇ m2, 2000 ⁇ m2, 3000 ⁇ m2, 4000 ⁇ m2, 5000 ⁇ m2, 6000 ⁇ m2, 7000 ⁇ m2, 8000 ⁇ m2, 9000 ⁇ m2 or 10000 ⁇ m2.
  • the magnification of the wide-field microscope can be 1x, 10x, 20x, 50x, 100x, 200x or 400x.
  • the magnification can be adjusted, for example, by size parameters of the solid-state immersion lens and/or the magnification of the objective lens.
  • the imaging can be adjusted by varying the parameters of magnification, number of pixels and size of the image sensor. For example, it is known from the state of the art that solid-state quantum sensors can be imaged using scanning tip microscopy.
  • the scanning tip microscopy used for this is based on the use of a sharp microscopic NV diamond tip that is scanned at a controlled distance of only a few nanometers from a sample. As the tip moves over the surface, the topography and magnetic structures of the sample are recorded, creating images with a resolution in the nanometer range. In order to achieve the best To achieve high spatial resolution, the NV center is brought very close to the tip of the tip. While the radius of curvature of the tip determines the lateral resolution of the topography image, the distance between the NV center and the sample surface determines the lateral resolution for the magnetic image.
  • a spatial resolution of 10 nm is possible; in practice, the resolution is more on the order of 25-50 nm for samples where the tip is as close to the surface as possible. Cover layers, for example, reduce the resolution. Since the tip has to get very close to the sample and be very stable, the experimental setups are extremely complex, expensive and not easy to handle.
  • the invention solves these problems by using wide-field microscopy to image the solid-state quantum sensors, which enables a similar resolution but allows faster measurement because many, optionally all, solid-state quantum sensors in the field of view can be imaged simultaneously. Furthermore, wide-field microscopy is less susceptible to interference compared to scanning tip microscopy, for example to vibrations or temperature fluctuations.
  • Quantum sensors in solids are usually read out via their spin-state-dependent fluorescence.
  • the measured signals e.g., magnetic fields, electric fields, temperature, etc.
  • optical signals This principle can also be used in the present invention.
  • basic principles of the invention are explained using magnetic field measurements using NV centers. These principles or considerations apply analogously to the measurement of other physical quantities and/or using other solid-state quantum sensors.
  • One method for measuring an external static magnetic field is the direct evaluation of the Zeeman splitting in an optically detected NV electron spin resonance (ESR) spectrum or in an optically detected magnetic resonance (ODMR).
  • the optimal response of the spin-dependent fluorescence signal (photoluminescence, PL) to a magnetic field is achieved by setting a microwave drive frequency to the maximum slope of a given ESR dip. Assuming an infinitesimal magnetic field variation ⁇ B, the change in NV fluorescence is then given by ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ , where I 0 is the NV center PL rate, ⁇ B is the magnetic field change and ⁇ t is the measurement time. At the same time, the readout noise is dominated by the photon shot noise and is therefore equal to ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ .
  • the NV centers can be embedded in a diamond solid-state immersion lens (generally: the solid-state quantum sensors in a solid-state immersion lens). With this geometry, all or most of the light rays from the field of view can emerge perpendicular to the surface of the solid-state immersion lens. This improves the collection efficiency of the solid-state quantum sensors by about an order of magnitude.
  • the solid-state immersion lens is an optical lens, optionally a plano-convex collection lens.
  • the solid-state immersion lens can be a (one-sided) spherically ground lens with positive refractive power.
  • the solid-state immersion lens has a sample side and an optical side.
  • the sample side is the side of the solid-state immersion lens on which the sample is placed, which is in contact with the sample or which is close to the sample.
  • the sample side can be flat and/or form one or more planes.
  • the sample side can form a cone or truncated cone.
  • the shape of the sample side can be adapted to the shape of the sample so that the sample side is as close to the sample as possible over its entire extent.
  • the sample side is optionally a side surface of the sensor layer. This allows the solid-state quantum sensors to be arranged as close to the sample as possible.
  • the sensor layer can alternatively or additionally be designed in such a way that the sensor layer is or can be arranged (in direct) proximity to the sample.
  • the optical side of the solid-state immersion lens is the side of the solid-state immersion lens through which light is coupled in to excite the solid-state quantum sensors and/or the light emitted by the solid-state quantum sensors is coupled out of the solid-state immersion lens.
  • the optical side is thus the side through which light is guided for imaging the solid-state quantum sensors.
  • the optical side has a structure or shape that is selected so that all or most of the light emitted by the solid-state quantum sensors in the field of view can leave the solid-state immersion lens through the optical side.
  • the optical side has a convex shape, such as a hemispherical shape or the shape of a spherical segment.
  • the optical side can have the shape of a Weierstrass lens.
  • the optical side is optionally provided by the base body. This means that the base body has the properties described above to be able to couple out light emitted by the quantum sensors.
  • the optical side can have a hemisphere radius of 0.1 mm, 0.5 mm, 1 mm, 2 mm or 4 mm. These values can also be the radii for the circular sample side.
  • the position of the center of the hemisphere shape or a sample side with a Weierstrass lens shape can have a tolerance of ⁇ 50 ⁇ m, ⁇ 10 ⁇ m, ⁇ 5 ⁇ m, ⁇ 1 ⁇ m, ⁇ 0.5 ⁇ m or ⁇ 0.1 ⁇ m.
  • a roughness of the optical side may have a standard deviation of less than 5 ⁇ m, less than 1 ⁇ m, less than 0.5 ⁇ m, less than 0.25 ⁇ m, less than 0.05 ⁇ m or less than 0.01 ⁇ m or more than 0.001 ⁇ m.
  • the optical side may have a tolerance in roundness, a measure of how closely the shape of the optical side in cross section resembles a semicircle, of less than 10 ⁇ m, less than 5 ⁇ m, less than 1 ⁇ m, less than 0.5 ⁇ m, less than 0.1 ⁇ m or less than 0.05 ⁇ m or more than 0.01 ⁇ m.
  • the sample side is optionally partially or completely provided by the sensor layer. This means that one side or side surface of the sensor layer is the sample side.
  • an exposed side of the sensor layer i.e. a side of the sensor layer that can be touched from the outside, is the sample side or forms part of it.
  • the solid-state quantum sensors are arranged close to or directly on an outside of the solid-state immersion lens that is in contact with the sample or is arranged close to the sample.
  • the solid-state quantum sensors can be arranged close to the sample (or the sample close to the solid-state quantum sensors) so that the physical quantities to be determined can be better measured. can be used because there is little or no loss or attenuation due to the material of the solid-state immersion lens.
  • the sample side can have a radius tolerance of ⁇ 100 ⁇ m, ⁇ 50 ⁇ m, ⁇ 10 ⁇ m, ⁇ 5 ⁇ m, ⁇ 1 ⁇ m or ⁇ 0.5 ⁇ m.
  • a roughness of the sample side can have a standard deviation of less than 100 nm, less than 50 nm, less than 10 nm, less than 5 nm, less than 1 ⁇ m, or less than 0.1 nm or more than 0.01 nm.
  • the solid-state immersion lens can be a one-piece component, which means that the base body and the sensor layer form part of a one-piece optical component.
  • the sensor layer can be grown on the base body. It is also possible for the sensor layer to be applied to the base body. Optionally, no optical refraction occurs between the base body and the sensor layer.
  • the refractive index of the sensor layer is identical or substantially equal to the refractive index of the base body, where substantially equal means a deviation of less than 5%, less than 1%, less than 0.5%, less than 0.1%, less than 0.05%, or less than 0.01% or more than 0.001%.
  • This can be achieved by making the base body and the sensor layer from the same material, whereby the solid-state quantum sensors do not or do not significantly influence the refractive index of either the base body or the sensor layer due to their low density.
  • the solid-state quantum sensors are optionally only present in the sensor layer and not in the base body. This can be achieved, for example, by installing, doping or implanting the solid-state quantum sensors only in the sensor layer but not in the base body.
  • the base body and the sensor layer can be made of a single-crystal material, with the solid-state quantum sensors only being implanted or incorporated in the sensor layer during the growth process.
  • the single-crystal structure for example, artifacts in the growth process
  • there are no solid-state quantum sensors in the base body there are no solid-state quantum sensors in the base body. Therefore, the difference between the base body and the sensor layer can be seen in the fact that during the manufacture of the solid-state immersion lens, solid-state quantum sensors are only actively implanted or otherwise provided in the sensor layer, but not in the base body. Due to this, the emission of light from the solid-state quantum sensors can be limited to the sensor layer.
  • the sensor layer optionally has a thickness that is less than 10%, less than 5%, less than 1%, less than 0.5%, less than 0.3%, less than 0.1%, less than 0.05%, less than 0.01% or less than 0.0001% or more than 0.00001% of the thickness of the entire solid-state immersion lens.
  • the respective thicknesses can be measured in a z-direction that corresponds to an optical axis of the solid-state immersion lens and/or the microscope, for example an optical axis of the objective.
  • the sensor layer can extend in an xy-direction that is perpendicular to the z-direction.
  • the solid-state quantum sensors can be defects in the material of the sensor layer, which can optionally be filled with atoms of another material, such as nitrogen defects in diamond. Alternatively, the solid-state quantum sensors can be atoms at intermediate lattice sites.
  • the solid-state quantum sensors are characterized by the fact that they absorb light in one or more wavelength ranges and/or emit light in a wavelength range that is different from the absorption wavelength range.
  • a wavelength range can have a size of 10 nm, 20 nm, 30 nm, 40 nm, 50 nm or 100 nm. If light is emitted in a different wavelength range than that absorbed, this is often referred to as fluorescence.
  • This behavior of the solid-state quantum sensors also depends on a physical quantity at the location of the respective solid-state quantum sensor. This can mean that depending on the strength, orientation and/or frequency of the physical quantity, the solid-state quantum sensors absorb and/or emit light differently. In other words, the physical quantity, for example a magnetic field, an electric field or the local temperature, changes the absorption and/or the emission of light by the solid-state quantum sensors, optionally depending on the respective wavelength range.
  • This change in the absorption and/or emission of the solid-state quantum sensors can be imaged optically in a spatially resolved manner using the wide-field microscope. For example, when there is a (local) change in the physical quantity, the solid-state quantum sensors begin to absorb and/or emit light and/or show a change in the strength of the emission and/or absorption. This can be registered when imaging the solid-state quantum sensors and in a change in the physical quantity.
  • the change in the physical quantity can be determined with spatial resolution.
  • the change in the absorption and/or emission of light by the solid-state quantum sensors can also depend on the orientation of the solid-state quantum sensors relative to the physical quantity, for example the orientation of the magnetic or electric field.
  • the solid-state quantum sensors can be implanted or built into the sensor layer in different orientations. In this case, the orientation of the physical quantity and/or the change in the orientation of the physical quantity can also be determined with spatial resolution using the solid-state quantum sensors.
  • the installation or implantation of solid-state quantum sensors can be carried out statistically randomly, so that the number of solid-state quantum sensors in the sensor layer can be determined using an average density.
  • the sensor layer has a thickness of less than 50 nm, 100 nm, 150 nm, 200 nm, or 300 nm or more than 1 nm. As described above, the thickness can extend parallel to the optical axis of the wide-field microscope.
  • the solid-state immersion lens can have a maximum diameter perpendicular to the thickness and/or to the optical axis that is between 0.1 mm and 15 mm, optionally between 0.2 mm and 10 mm, further optionally between 1 mm and 8 mm.
  • the maximum diameter is the largest diameter of all diameters that can be measured perpendicular to the optical axis of the solid-state immersion lens or microscope. In the case of a hemispherical solid-state immersion lens, the maximum diameter corresponds to the diameter.
  • the maximum diameter of the field of view for imaging the solid-state quantum sensors can also be a few tens of micrometers.
  • the thickness of the solid-state immersion lens for example along the optical axis of the solid-state immersion lens or the microscope, can be between 0.1 mm and 10 mm, optionally between 0.2 mm and 5 mm, and further optionally between 0.5 mm and 4 mm.
  • the field of view or field of vision can be limited to a few tens of micrometers due to the (high) refractive index of the solid-state immersion lens. Thus, only a section of the sensor layer can be imaged using the wide-field microscope.
  • the field of view is optionally in the geometric center of the sensor layer. For example, in the case of a hemispherical solid-state immersion lens, the field of view can be located around the center of the hemisphere.
  • the solid-state immersion lens comprises diamond, wherein optionally the solid-state quantum sensors are defects in the crystal lattice, in particular nitrogen vacancy centers.
  • the sensor layer and the base body are made of a single-crystal diamond.
  • the solid-state immersion lens comprises a semiconductor material, preferably silicon carbide or silicon, wherein further preferably the solid-state quantum sensors are defects in the crystal.
  • the resolution of a microscope is limited by the Abbe limit, defined as: where d is the achievable resolution, ⁇ is the measured wavelength and NA is the numerical aperture of the optical system (the numerical aperture of the system can refer to the interaction of the numerical apertures of the solid-state immersion lens and the wide-field microscope).
  • the optical resolution is defined by the measured emission wavelength of the NV center (for example in the wavelength range 637 - 900 nm, whereby the main part can be 700 nm) and the NA.
  • optics with an NA of 1.0 are typically used, which consequently limits the optical resolution to approx. 350 nm (at 700 nm emission wavelength).
  • a solid-state immersion lens (SIL) made of diamond increases the numerical aperture of the optical system because it fills the object space with a solid with a high refractive index.
  • Solid-state immersion lenses were originally developed to improve spatial resolution in optical microscopy.
  • the solid-state immersion lens is a hemisphere with a flat bottom, with the sensor layer optionally running along the flat bottom.
  • the solid-state immersion lens is a hemisphere with a conical tip, a supersphere with a conical tip, or a diffraction-based solid-state immersion lens.
  • the hemisphere shape, the supersphere or the diffraction-based shape of the solid-state inversion lens can be provided by the base body. All of the above-mentioned shapes can have the effect that the light emitted by the solid-state quantum sensors in the field of view hits the optical side at such an angle that no or almost no total internal reflection occurs.
  • an angle between a tangent on the optical side and the light emitted by solid-state quantum sensors in the field of view is 90° or substantially 90°.
  • This has the effect, as previously described, that substantially all of the light emitted by solid-state quantum sensors in the field of view is coupled out of the solid-state immersion lens.
  • solid-state immersion lenses SILs
  • ⁇ Hemispherical SIL for example a hemisphere or spherical segment as the shape for the base body
  • the sensor layer can extend along the flat bottom of the hemisphere or along the conical tip of the supersphere. Instead of the hemisphere, a spherical segment can also be used.
  • An objective of the wide-field microscope which is arranged adjacent to the solid-state immersion lens, can have a concave front side that is opposite the optical side of the solid-state immersion lens. Due to the convex shapes of the optical side of the solid-state immersion lens and the concave front side of the objective, the front side of the objective can extend parallel to the optical side of the solid-state immersion lens in at least some areas. This makes it possible to avoid total reflection at the two interfaces.
  • the density of the solid-state quantum sensors in the sensor layer is greater than 0.01 ppm (parts per million), 0.1 ppm, 0.5 ppm, 1 ppm, 2 ppm, or 3 ppm and/or the density of the solid-state quantum sensors in the base body is less than 0.1 ppb (parts per billion), 1 ppb, 10 ppb, 50 ppb, 100 ppb, 150 ppb, or 200 ppb.
  • 0.1 ppb corresponds to approximately one tenth of the "natural" NV concentration, i.e. the NV concentration of the sensor layer.
  • the different densities of the solid-state quantum sensors in the sensor layer and in the base body can be created by implanting the solid-state quantum sensors only in the sensor layer and not in the base body.
  • the upper limit of the density of solid-state quantum sensors in the base body listed above can thus represent a process artifact.
  • the maximum density of solid-state quantum sensors in the base body listed above indicates the number of defects that are present in the monocrystalline material of the base body, even though great importance was attached to avoiding defects.
  • the base body is produced by growing it on a substrate, in particular iridium or sapphire.
  • the base body in a first step, can be grown on a substrate in order to produce a material for the base body that is, if possible, a monocrystalline (ideal) lattice structure and/or free of solid-state quantum sensors, for example free of defects or atom interstitial spaces.
  • a monocrystalline structure of the base body By growing on the substrate, for example, a monocrystalline structure of the base body can be produced.
  • the sensor layer can then be grown on the substrate. In this case, less care can be taken with regard to the unwanted incorporation of defects that can serve as quantum sensors in order to achieve the greater density of solid-state quantum sensors in the sensor layer.
  • the growth of the base body and/or the sensor layer can be carried out using (homoepitaxial) chemical vapor deposition.
  • the nitrogen concentration can be chosen differently during the growth of the base body and the sensor layer in order to achieve the corresponding concentrations for the solid-state quantum sensors in the respective areas.
  • other methods are also possible by means of which layers can be grown, for example physical vapor deposition.
  • the choice of substrate material for growing the base body can influence the growth direction of the ideal crystallographic alignment.
  • the substrate made of iridium or sapphire has therefore proven to be particularly advantageous, namely in that the crystallographic alignment of the diamond unit cell on the sample side has a small misalignment angle between the normal on the sample side and the ⁇ 100>, ⁇ 111>, ⁇ 110>, or ⁇ 113> crystal orientation.
  • the crystal orientation in the sensor layer and in the base body can be identical and thus the crystal orientation in the sensor layer is also influenced by the substrate, provided no intermediate steps as described below are used.
  • the separation of the growth steps for growing the base body and the sensor layer allows several solid-state immersion lenses to be manufactured "in stock” first and then the sensor layer to be grown. This means that variations of the solid-state quantum sensors can be produced much more quickly and cost-effectively on the same base body, i.e. variations of the solid-state immersion lens with the same geometric shape (since this is determined by the base body).
  • the base body has a natural concentration of 13 C isotopes, with the sensor layer optionally having a concentration of 13 C isotopes that is lower than the natural concentration.
  • the natural concentration of 13 C isotopes can be 1.1%.
  • 13 C isotopes can influence the function, for example their absorption and/or emission behavior, of the solid-state quantum sensors. Therefore, in this optional embodiment, the concentration of the 13 C isotopes in the sensor layer is reduced compared to the base body in order to reduce any negative effects of the 13 C isotopes on the solid-state quantum sensors. Since high-purity carbon, i.e. carbon with a lower concentration of 13 C isotopes compared to natural carbon, is expensive, the optional embodiment described here has the advantage that this expensive material only has to be used for the sensor layer, not for the base body.
  • the optional embodiment is significantly less problematic in the event of an error compared to an embodiment in which the sensor layer and the base body are manufactured in one step. For example, if an error occurs during the manufacture of the base body, expensive isotopically pure ( ⁇ 1.1% 13 C) material has not yet been used for the sensor layer.
  • one side of the base body is ground in such a way that a normal to the ground side has a deviation of less than 1°, 3°, 5°, or 7° or more than 0.1° to a crystal orientation.
  • the sensor layer is grown or applied to the ground side.
  • the grinding of the base body can be done in such a way that the ground side of the base body has a roughness of less than 1 nm to 5 nm.
  • the sensor layer can then be grown on this ground side.
  • the crystal growth of the base body can be influenced by the substrate and other factors, so that a deviation of the crystallographic orientation from a desired orientation can occur. It has been found that such a deviation, for example a deviation of more than 1°, negatively affects the functioning of the solid-state quantum sensors.
  • the solid-state quantum sensors absorb and/or emit less compared to an ideal crystallographic orientation of the lattice structure of the sensor layer.
  • the solid-state quantum sensors show increased or maximum absorption and/or emission.
  • the grown base body can be ground in such a way that the ground side of the base body has the desired crystallographic orientation. Since the sensor layer can be grown directly onto the base body, the sample side also has this desired crystallographic orientation. After the sensor layer has been grown onto the base body, the sensor layer can be further treated in a subsequent step to convert additional nitrogen into NV centers; e.g. by means of electron irradiation, laser irradiation, proton irradiation, etc.
  • the density of the solid-state quantum sensors can be increased independently of the production of the sensor layer compared to the density of the solid-state quantum sensors in the base body. It is also possible that no solid-state quantum sensors are provided when growing the sensor layer and the solid-state quantum sensors are only implanted into the sensor layer after the sensor layer has grown. Furthermore, it is also possible that the solid-state immersion lens is produced in one step, i.e. no distinction is made between the production of the base body and the sensor layer. Here too, the solid-state quantum sensors can be implanted into a layer after the solid-state immersion lens has been produced in order to produce the sensor layer.
  • a method for producing a solid-state immersion lens which contains solid-state quantum sensors comprises: manufacturing one of the solid-state immersion lenses and implanting solid-state quantum sensors in a layer of the solid-state immersion lens to create a sensor layer, wherein a density of the solid-state quantum sensors in the sensor layer is greater than the density of the solid-state quantum sensors in the remainder of the solid-state immersion lens (which may correspond to the base body).
  • the solid-state immersion lens may optionally be polished and/or the solid-state immersion lens may be trimmed or ground such that a normal to the ground or trimmed side has a deviation of less than 1°, 3°, 5°, or 7° or more than 0.1° to a crystal orientation.
  • the wide-field microscope comprises an objective and/or an image sensor.
  • the solid-state quantum sensors can be imaged onto the image sensor by means of a wide-field image.
  • the wide-field microscope can be free of a pinhole, such as those used for confocal microscopy to reduce the image in the direction of the optical axis.
  • the wide-field microscope can also have optical filters and/or other optical elements to influence, align, focus and/or redirect the beam path.
  • An image sensor is understood here to be a device for recording two-dimensional images from light by electrical or mechanical means. Semiconductor-based image sensors can be used that can record light up to the mid-infrared.
  • Examples of image sensors in the visible range and in the near infrared range are CCD sensors.
  • the image sensor can convert incident light into electrical or electronic signals, the electrical and electronic signals indicating the intensity of the incident light and/or the wavelength of the incident light, in particular spatially resolved.
  • the image sensor has a plurality of pixels, each generating electrical or electronic signals, the electrical and electronic signals indicating the intensity of the incident light and/or the wavelength of the incident light.
  • the plurality of electrical and electronic signals generated by the pixels can then be converted into a two-dimensional image.
  • the image sensor can have a number of pixels of 50x50 pixels; 250x250 pixels; 1000x1000 pixels; 2000x2000 pixels, 4000x4000 pixels or 8192x8192 pixels.
  • the image sensor can be non-square and have one of the above values for the number of pixels along one direction.
  • the size of the image sensor is optionally 1x1 ⁇ m2, 2.5x2.5 ⁇ m2, 5x5 ⁇ m2, 10x10 ⁇ m2, 25x25 ⁇ m2 or 50x50 ⁇ m2.
  • the image sensor can also be non-square and then have an edge length with the values mentioned.
  • the device can also have a computer or calculator that is in data communication with the image sensor.
  • the computer can read the electrical or electronic signals generated by the image sensor, convert them into a digital image and/or calculate an image of the physical quantity from the digital image.
  • the computer can therefore carry out the step of determining the spatially resolved physical sample based on the image of solid-state quantum sensors in the method for spatially resolved measurement of a physical quantity of a sample.
  • the device can also have a screen that is in data communication with the computer. The computer can control the screen to display the physical quantity calculated by it on the screen.
  • the computer can also be in data communication with the light source to control the light source.
  • the light source can have one or more lasers, one or more LEDs (light emitting diodes) and/or light sources with a broadband emission spectrum.
  • the light source can generate light of one wavelength or a narrow wavelength spectrum (for example 10 nm, 20 nm, 50 nm or 100 nm), wherein optionally the wavelength or wavelength range generated by the light source corresponds to a wavelength range that is absorbed by solid-state quantum sensors.
  • the wide-field microscope optionally has a dichroic mirror, by means of which the light generated by the light source can be coupled in or the light emitted by the solid-state quantum sensors can be coupled out. Such structures are well known.
  • the device further comprises a magnetic device for generating a magnetic field gradient in the sensor layer.
  • the magnetic device can be in data communication with the computer so that the computer can control the magnetic device.
  • the magnetic device can generate a magnetic field with a gradient in the sensor layer of the solid-state immersion lens.
  • the magnetic field generated by the magnetic device can be used to increase or manipulate the absorption and/or emission of the solid-state quantum sensors to thereby generate a better signal-to-noise ratio.
  • the magnetic field device can comprise one or more Helmholtz coils.
  • the solid-state immersion lens can be arranged on an axis of the Helmholtz coil.
  • the device can comprise a device for generating microwave radiation (e.g.
  • a generator and antenna for emitting microwave radiation which can be in data communication with the computer so that the computer can control the device for generating the microwave radiation.
  • the microwave radiation can be used to generate a resonance in the solid-state quantum sensors to excite absorption and/or emission of light, which can then be optically imaged as described above.
  • the solid-state quantum sensors can make use of Zeeman splitting.
  • the optimal response of the spin-dependent fluorescence signal (photoluminescence, PL) to a magnetic field can be achieved by setting a microwave drive frequency to the maximum slope of a given ESR dip.
  • the device comprises a confocal microscope for imaging the solid-state quantum sensors, where the confocal microscope can be a STED (Stimulated Emission Depletion) microscope or a STOM (Stochastic Optical Reconstruction Microscope).
  • the confocal microscope can be used to increase the spatial resolution of the device.
  • the wide-field microscope can be used to create an overall image of the physical quantity, and the confocal microscope can be used to image partial areas of the overall image with a higher resolution.
  • the beam path of the confocal microscope can be coupled into and/or coupled out of the beam path of the wide-field microscope by means of beam splitters, such as dichroic mirrors.
  • the device further comprises a holder for the solid-state immersion lens.
  • the holder can be a plate with a hole into which the solid-state immersion lens is embedded.
  • the surface of the holder can be on a plane with the sample side of the Form a solid-state immersion lens.
  • the sample can be placed on the holder and/or the solid-state immersion lens.
  • the device for generating microwave radiation and/or the magnetic device can be arranged on the holder and/or surround the hole or the solid-state immersion lens.
  • An exemplary manufacturing process of a NV-doped solid-state immersion lens is as follows: ⁇ Growing a high-purity diamond substrate ( ⁇ 50 ppm nitrogen concentration) to produce the base body. ⁇ Polishing the diamond substrate into a spherical shape ⁇ Cutting the diamond sphere, for example along the crystal direction ( ⁇ 100>, ⁇ 111>, or ⁇ 110>) to form a hemisphere or Weierstrass SIL. ⁇ Implanting nitrogen atoms into the hemisphere to form NV centers or overgrowing a nitrogen-doped diamond layer by chemical vapor deposition on the flat side (sample side) of the solid-state immersion lens to create the sensor layer.
  • a macroscopic solid-state immersion lens is made from CVD (chemical vapor deposition) diamonds.
  • This SIL is usually millimeter-sized (0.5 – 4.0 mm radius, typically 1.0 mm radius).
  • the diamond material can contain ⁇ 1.1% 13C (natural 13C isotope concentration) and ideally has ⁇ 1 - 200 ppb nitrogen concentration. However, the nitrogen concentration can also be higher if measured in a confocal fluorescence microscope.
  • the flat side of the SIL is polished to ⁇ 1 – 5 nm roughness and must be corrected to ⁇ 1 ° misalignment from the ideal crystallographic orientation.
  • the flat side of the SIL has a ⁇ 100>, ⁇ 111>, ⁇ 110>, or ⁇ 113> crystal orientation.
  • a second diamond layer is grown on the flat side of the solid-state immersion lens using homoepitaxial CVD.
  • This diamond layer has a defined nitrogen concentration in the ppb to ppm range, has ideally but not necessarily ⁇ 1.1% 13C content and is nanometer to micrometer thick. In this growth step, some nitrogen atoms are already converted to NV centers.
  • the sensor layer of the solid-state immersion lens can be further treated in the subsequent step to convert more nitrogen into NV centers; e.g.: by means of electron irradiation, laser irradiation, proton irradiation, etc.
  • a large number of different embodiments are possible, in which the following parameters can be varied:
  • Geometry of the solid-state immersion lens various geometries are known, e.g.: hemispherical SIL, Weierstrass SIL, ...
  • Aspect 1 A method for producing a macroscopic quantum sensor-doped solid-state immersion lens, comprising: Production of a solid-state immersion lens from single-crystal diamond with a nitrogen concentration ⁇ 1 - 200 ppb and an angle of error (deviating from the ideal crystal orientation) of ⁇ 1 ° and then growing a second diamond layer which contains the quantum sensors.
  • Aspect 2 A method according to aspect 1, according to which the solid-state immersion lens has a radius of 0.5 - 4.0 mm.
  • Aspect 3 A method according to aspect 1, according to which the solid-state immersion lens contains 1.1% 13C isotope.
  • Aspect 4 A method according to aspect 1, according to which the quantum sensor-doped diamond layer contains 1.1% 13C or less.
  • Aspect 5 A method according to aspect 1, according to which the crystallographic orientation of the flat side of the solid-state immersion lens corresponds to ⁇ 100>, ⁇ 111>, ⁇ 110>, or ⁇ 113>.
  • Aspect 6 A method according to aspect 1, according to which the quantum sensors are diamond color centers.
  • Aspect 7 A method according to aspect 1, according to which the quantum sensors are nitrogen or silicon vacancy centers.
  • Aspect 1 A method for microscopy of magnetic fields with increased optical resolution using solid-state immersion lenses doped with an ensemble of solid-state quantum sensors.
  • Aspect 2 Method according to aspect 1, wherein the solid-state immersion lenses consist of a semiconductor material.
  • Aspect 3 Method according to aspect 1 or 2, wherein the solid-state immersion lenses consist of diamond.
  • Aspect 4 Method according to aspect 3, wherein the solid-state quantum sensors are nitrogen vacancy centers.
  • Aspect 5 Method according to aspect 3, wherein the solid-state quantum sensors are silicon vacancy centers.
  • Aspect 6 Method according to aspect 1, wherein the solid-state immersion lenses are a hemisphere with a flat bottom.
  • Aspect 7 Method according to aspect 1, wherein the solid-state immersion lens is a supersphere (Weierstrass) with a flat bottom.
  • Aspect 8 Method according to aspect 1, wherein the solid-state immersion lens is a hemisphere with a conical tip.
  • Aspect 9 Method according to aspect 1, wherein the solid-state immersion lens is a supersphere with a conical tip.
  • Aspect 10 Method according to aspect 1, wherein the solid-state immersion lens is a diffraction-based solid-state immersion lens.
  • Aspect 11 Method according to aspect, wherein magnetic field gradients are used to improve the resolution.
  • Aspect 12 Method according to aspect 1, wherein the method is combined with other methods for improving resolution (e.g. STED, STORM, ).
  • Fig. 1 shows a schematic view of a structure of a device for a spatially resolved measurement of a physical quantity of a sample according to a first embodiment
  • Fig.2 is a schematic view of a structure of a device for a spatially resolved measurement of a physical quantity of a sample according to a first embodiment
  • Figs.3a and 3b are schematic cross sections of two embodiments of a solid-state immersion lens which can be used for the devices according to Figs.1 or 2
  • Fig.4 is a block diagram for a method for producing the solid-state immersion lens according to Fig.3a or 3b
  • Fig.5 is a block diagram for a method for the spatially resolved measurement of a magnetic field of a sample.
  • Fig.1 shows a first embodiment of a device 10 for a spatially resolved measurement of a physical quantity of a sample 12.
  • the physical quantity can be a magnetic field or an electric field which is generated or varied by the sample 12.
  • the device 10 comprises a wide-field microscope 11, a solid-state immersion lens 14 and/or a light source 16.
  • the wide-field microscope 11 has a beam splitter 18, an objective 20, an image sensor 22 and/or a holder 24.
  • the device 10 can further comprise a computer 26 and/or a microwave antenna 28 as an example of a device for generating microwave radiation.
  • the solid-state immersion lens 14 has a plurality of solid-state quantum sensors 30 (see Fig. 3), which can be imaged onto the image sensor 22 by means of the objective 20.
  • the wide-field microscope 11 allows the solid-state quantum sensors 30 to be imaged onto the image sensor 22 by means of a wide-field image.
  • the image sensor 22 converts the incident light radiation into electrical or electronic signals in a spatially resolved manner.
  • the image sensor 22 comprises a plurality of pixels, each pixel generating an electrical or electronic signal that indicates an intensity and/or a wavelength of the incident radiation for each pixel. From the plurality of electrical or electronic signals for each pixel, a digital image of the solid-state quantum sensors 30 in the solid-state immersion lens 14 can be generated. This can be done by the computer 26, which is in data communication with the image sensor 22, for example to trigger the electrical or electronic signals of the image sensor 22 and/or to control the image sensor 22.
  • the computer 26 has, for example, a processor and a memory. One or more programs and/or algorithms that are executed by the processor can be stored on the memory.
  • the computer 26 can also be connected to the light source 16 in Data communication is available to control the light source 16.
  • the light source 16 can have one or more lasers or other devices for generating light.
  • the light generated by the light source 16 can be in the visible wavelength range, the infrared wavelength range or the ultraviolet wavelength range.
  • the light source 16 can be designed to selectively generate light in a selected wavelength range, for example in a wavelength range that is absorbed by the solid-state quantum sensors 30.
  • the light generated by the light source 16 is coupled into the wide-field microscope 11 via the beam splitter 18 and guided to the objective 20.
  • the objective 20 focuses the incident light onto the solid-state quantum sensors 30 in the solid-state immersion lens 14.
  • the light emitted by the solid-state quantum sensors 30 and/or light that is reflected, for example, at the interface between the solid-state immersion lens 14 and the sample 12 and in which light is absorbed in one or more wavelengths by the solid-state quantum sensors 30 (so that the intensity of the reflected light varies depending on location and/or wavelength) is projected by the objective 20 onto the image sensor 22.
  • the light rays in the beam paths described here do not have to be parallel, as shown in Fig.1.
  • the beam splitter 18 can be a semi-transparent mirror and/or a dichroic mirror.
  • the choice of the type of beam splitter 18 depends on the light generated by the light source 16 and which light is emitted and/or absorbed by the solid-state quantum sensors 30.
  • the solid-state immersion lens 14 is supported by the holder 24.
  • the holder 24 has, for example, a hole into which the solid-state immersion lens 14 is embedded.
  • a surface of the holder 24 can form a plane with a sample side 32 of the solid-state immersion lens 14.
  • the sample 12 can be placed on the solid-state immersion lens 14 and/or the holder 24.
  • the holder 24 can also support the microwave antenna 28.
  • the microwave antenna 28 can surround the solid-state immersion lens 14 so that the microwave radiation emitted by the antenna 28 penetrates the solid-state immersion lens 14 from all sides and interacts with the solid-state quantum sensors 30.
  • the microwave antenna 28 can be controlled by the computer 26 and/or is in data communication with the computer 26.
  • the microwave radiation generated by the microwave antenna 28 can be used to excite and/or increase the absorption and/or emission of light by the solid-state quantum sensors 30.
  • Fig.2 shows a second embodiment of a device 10 for a spatially resolved measurement of a physical quantity of a sample 12, which, apart from the differences described below, has the same optional features, properties, and/or components as the device 10 described in Fig.1.
  • the device 10 according to Fig.2 does not have a microwave antenna 28, but instead has a confocal microscope 34, a second beam splitter 36 and/or a magnetic device 38.
  • the confocal microscope 34 can be coupled into the beam path of the wide-field microscope 11 via the second beam splitter 36.
  • the second beam splitter 36 can be a semi-transparent mirror and/or a dichroic mirror.
  • the confocal microscope 34 can be constructed like a known confocal microscope and/or have a pinhole in order to image a selected layer in the solid-state immersion lens 14. This allows background radiation to be suppressed better than with wide-field imaging.
  • the solid-state quantum sensors 30 are optionally located in the layer imaged by the confocal microscope 34.
  • the confocal microscope 34 can also be used to achieve a higher spatial resolution.
  • the magnetic device 38 can be in data communication with the computer 26 and/or the computer 26 can be controlled.
  • the magnetic device 38 can generate a magnetic field, in particular a magnetic field gradient along the solid-state quantum sensors 30 in the solid-state immersion lens 14.
  • the magnetic field generated by the magnetic device 38 can be used to enable and/or increase the absorption and/or emission of light by the solid-state quantum sensors 30.
  • the solid-state immersion lens 14 according to Fig. 3a has the geometric shape of a hemisphere and is made of diamond.
  • the solid-state immersion lens 14 can be divided into a base body 40 and a sensor layer 42, and the solid-state immersion lens 14 also forms a one-piece component.
  • the sensor layer 42 and the base body 40 can differ in that the solid-state quantum sensors 30 are only provided in the sensor layer 42.
  • solid-state quantum sensors 30 are only implanted or introduced into the sensor layer 42, whereas this does not happen in the base body 40.
  • solid-state quantum sensors 30 may also be present in the base body 40, namely due to artifacts, such as lattice misalignments or defects, in the lattice structure of the base body 40.
  • the density of the solid-state quantum sensors 30 in the sensor layer 42 is higher than the density of the solid-state quantum sensors in the base body 40.
  • the density of the solid-state quantum sensors 30 in the sensor layer 42 is greater than 0.01 ppm, 0.1 ppm, 0.5 ppm, 1 ppm, 2 ppm or 3 ppm and/or the Density of the solid-state quantum sensors 30 in the base body 40 is less than 0.1 ppb, 1 ppb, 10 ppb, 50 ppb, 100 ppb, 150 ppb, or 200 ppb.
  • the solid-state immersion lens 14 has a size in the order of millimeters (for example 0.5 - 4.0 mm radius, optionally 1.0 mm radius).
  • the sensor layer 42 has a thickness of less than 50 nm, 100 nm, 150 nm, 200 nm or 300 nm or more than 1 nm.
  • the solid-state immersion lens 14 has the sample side 32, which is defined by the flat bottom of the hemispherical shape, and an optical side 44, which is defined by the hemispherical shape.
  • the optical side 44 is arranged facing the objective 20, while the sample side 32 faces the sample 12 or is in contact with the sample 12.
  • the sensor layer 42 extends along the sample side 32. This means that the solid-state quantum sensors 30 are only arranged along the sample side 32.
  • the solid-state immersion lens 14 is made of diamond and the solid-state quantum sensors 30 are defects in the crystal lattice, in particular nitrogen vacancy centers.
  • the base body 40 has a natural concentration of 13 C isotopes, while the sensor layer 42 has a concentration of 13 C isotopes that is lower than the natural concentration.
  • the solid-state immersion lens 14 can comprise a semiconductor material, preferably silicon carbide or silicon.
  • the solid-state quantum sensors 30 can be defects in the crystal.
  • the solid-state immersion lens 14 according to Fig. 3b has the same optional features, properties, and/or materials as the solid-state immersion lens 14 described in Fig. 3a, except for the differences described below.
  • the difference in the two solid-state immersion lenses 14 is that the solid-state immersion lens 14 according to Fig. 3b has the shape of a spherical segment. A method for producing solid-state immersion lens 14 is now described below.
  • a substrate is provided, for example iridium or sapphire.
  • the base body 40 is grown on the substrate. This can be done by means of chemical vapor deposition. The nitrogen concentration is kept low in order to achieve the density of the solid-state quantum sensors 30 in the base body 40 described above. Furthermore, natural carbon can be used for the base body 40, i.e. with a natural concentration of 13 C isotopes.
  • the base body 40 is ground so that a normal to the ground side has a deviation of less than 1°, 3°, 5°, or 7° or more than 0.1° from a crystal orientation.
  • the crystal orientation can relate to the ⁇ 100>, ⁇ 111>, ⁇ 110> or ⁇ 113> axis of the lattice structure of diamond.
  • the sensor layer 42 is grown on the ground side of the base body 40. This can also be done by means of chemical vapor deposition, wherein the nitrogen concentration can be increased compared to the production of the base body 40 in order to provide the higher density of solid-state quantum sensors 30 in the sensor layer 42. Furthermore, carbon which has a lower concentration than the natural concentration of 13 C isotopes can be used for the sensor layer 42.
  • the sensor layer 42 can be further treated to convert further nitrogen into NV centers; e.g.
  • step S1 the solid-state immersion lens 14 is placed in the wide-field microscope 11 and the sample 12 is placed on the solid-state immersion lens 14.
  • step S2 the solid-state immersion lens 14 is illuminated by the light source 16 such that the solid-state quantum sensors 30 interact with the light generated by the light source 16.
  • the lens 20 is then adjusted such that the solid-state quantum sensors 30 are imaged on the image sensor 22.
  • step S3 the image of the solid-state quantum sensors 30 is recorded and evaluated in order to determine the magnetic field caused by the sample 12 in a spatially resolved manner.

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Abstract

L'invention concerne un dispositif de mesure à résolution spatiale d'une variable physique d'un échantillon (12), ledit dispositif comprenant une lentille à immersion solide (14) avec une pluralité de capteurs quantiques à semi-conducteurs (30), une source de lumière (16) pour éclairer les capteurs quantiques à semi-conducteurs (30), et un microscope à grand angle (11) pour imager les capteurs quantiques à semi-conducteurs (30).
PCT/DE2024/100493 2023-05-31 2024-05-29 Lentille à immersion solide, procédé de production d'une lentille à immersion solide, et dispositif et procédé pour une mesure à résolution spatiale d'une variable physique d'un échantillon à l'aide de la lentille à immersion solide Pending WO2024245506A1 (fr)

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DE102023114224.0A DE102023114224A1 (de) 2023-05-31 2023-05-31 Festkörper-Immersionslinse, Verfahren zur Herstellung einer Festkörper-Immersionslinse, Vorrichtung und Verfahren für eine ortsaufgelöste Messung einer physikalischen Größe einer Probe mit der Festkörper-Immersionslinse
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Citations (2)

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WO2012016977A2 (fr) 2010-08-04 2012-02-09 Element Six Limited Elément optique en diamant
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DE102021206954A1 (de) * 2021-07-02 2023-01-05 Q.ant GmbH Magnetfeldgradiometer

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WO2012016977A2 (fr) 2010-08-04 2012-02-09 Element Six Limited Elément optique en diamant
DE102019119212A1 (de) * 2019-07-16 2021-01-21 Carl Zeiss Ag Vorrichtungen und Verfahren zur magnetfeldabhängigen optischen Detektion

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SIYUSHEV, P. ET AL.: "Monolithic diamond optics for single photon detection", APPL. PHYS. LETT., vol. 97, 2010, pages 241902, XP012138092, DOI: 10.1063/1.3519849

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