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WO2024135127A1 - Dispositif d'imagerie à semi-conducteurs - Google Patents

Dispositif d'imagerie à semi-conducteurs Download PDF

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Publication number
WO2024135127A1
WO2024135127A1 PCT/JP2023/040027 JP2023040027W WO2024135127A1 WO 2024135127 A1 WO2024135127 A1 WO 2024135127A1 JP 2023040027 W JP2023040027 W JP 2023040027W WO 2024135127 A1 WO2024135127 A1 WO 2024135127A1
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WIPO (PCT)
Prior art keywords
pixel
solid
imaging device
state imaging
photoelectric conversion
Prior art date
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Ceased
Application number
PCT/JP2023/040027
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English (en)
Japanese (ja)
Inventor
祐介 上坂
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to CN202380084217.2A priority Critical patent/CN120345371A/zh
Publication of WO2024135127A1 publication Critical patent/WO2024135127A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Definitions

  • This disclosure relates to a solid-state imaging device.
  • Patent Document 1 discloses a solid-state imaging device.
  • the solid-state imaging device a plurality of pixels are regularly arranged.
  • Each pixel includes a photoelectric conversion unit that converts light into electric charges, and a color filter that is provided corresponding to the photoelectric conversion unit.
  • light in a predetermined band in the visible light region that has passed through the color filter is incident on the photoelectric conversion unit.
  • a light-shielding film is formed between the photoelectric conversion unit and the color filter in a region along the boundary of the photoelectric conversion unit, i.e., between the pixels. By forming the light-shielding film, color mixing caused by the color filter can be improved.
  • Solid-state imaging devices as surveillance sensors are being developed.
  • white pixels without color filters are incorporated in these solid-state imaging devices.
  • NIR near infrared
  • the white pixels light in the near infrared (NIR) band is incident on a photoelectric conversion unit.
  • NIR near infrared
  • an infrared cut filter is disposed, the sensitivity of the pixel decreases, so it is desired to alleviate the decrease in pixel sensitivity while improving color mixing between the pixel and a white pixel.
  • the solid-state imaging device includes a first pixel in which a color filter is disposed on a first photoelectric conversion element that converts light into an electric charge, a second pixel in which a color filter is not disposed on a second photoelectric conversion element that converts light into an electric charge, and a filter wall disposed between the first pixel and the second pixel and formed of an infrared cut filter material.
  • the solid-state imaging device is the same as the solid-state imaging device according to the first embodiment, except that it further includes a first light shield that is disposed between the first pixel and the second pixel and blocks light.
  • the filter wall is disposed so as to overlap the first light shield.
  • the solid-state imaging device is the solid-state imaging device according to the first embodiment, further comprising an inter-pixel separator between the first photoelectric conversion element and the second photoelectric conversion element, which electrically and optically separates the first photoelectric conversion element and the second photoelectric conversion element.
  • the filter wall extends over at least a portion of the inter-pixel separator.
  • a second light shield that blocks light is embedded in the inter-pixel separator.
  • FIG. 1 is a vertical cross-sectional configuration diagram (a cross-sectional view taken along the line AA shown in FIG. 2A) of a main part of a solid-state imaging device according to a first embodiment of the present disclosure.
  • FIG. 2A is a plan view of a color filter of a main portion of the solid-state imaging device shown in FIG.
  • FIG. 2B is a plan view of a filter wall overlapping the color filter shown in FIG. 2A.
  • FIG. 3 is a graph showing the relationship between the wavelength of light incident on a pixel of the solid-state imaging device shown in FIG. 1 and the sensitivity of the pixel.
  • FIG. 1 is a vertical cross-sectional configuration diagram (a cross-sectional view taken along the line AA shown in FIG. 2A) of a main part of a solid-state imaging device according to a first embodiment of the present disclosure.
  • FIG. 2A is a plan view of a color filter of a main portion of the solid-state imaging device shown in FIG.
  • FIG. 4A is a plan view of a color filter of a main part of a solid-state imaging device according to a first modified example of the first embodiment, which corresponds to FIG. 2A.
  • FIG. 4B is a plan view corresponding to FIG. 2B of a filter wall overlapping the color filter shown in FIG. 4A.
  • FIG. 5A is a plan view of a color filter of a main part of a solid-state imaging device according to a second modified example of the first embodiment, which corresponds to FIG. 2A.
  • FIG. 5B is a plan view corresponding to FIG. 2B of a filter wall overlapping the color filter shown in FIG. 5A.
  • FIG. 6 is a vertical cross-sectional configuration diagram of a main part of a solid-state imaging device according to a second embodiment of the present disclosure, corresponding to FIG.
  • FIG. 7 is a vertical cross-sectional configuration diagram of a main part of a solid-state imaging device according to a third embodiment of the present disclosure, corresponding to FIG.
  • FIG. 8 is a vertical cross-sectional configuration diagram of a main part of a solid-state imaging device according to a fourth embodiment of the present disclosure, corresponding to FIG.
  • FIG. 9 is a vertical cross-sectional configuration diagram of a main part of a solid-state imaging device according to a fifth embodiment of the present disclosure, corresponding to FIG. FIG.
  • FIG. 10 is a vertical cross-sectional configuration diagram of a main part of a solid-state imaging device according to a sixth embodiment of the present disclosure, corresponding to FIG.
  • FIG. 11 is a vertical cross-sectional configuration diagram of a main part of a solid-state imaging device according to a seventh embodiment of the present disclosure, corresponding to FIG.
  • FIG. 12 is a vertical cross-sectional configuration diagram of a main part of a solid-state imaging device according to an eighth embodiment of the present disclosure, corresponding to FIG.
  • FIG. 13 is a vertical cross-sectional configuration diagram of a main part of a solid-state imaging device according to a ninth embodiment of the present disclosure, corresponding to FIG. FIG.
  • FIG. 14 is a longitudinal sectional configuration diagram of a main part of a solid-state imaging device according to a tenth embodiment of the present disclosure, corresponding to FIG.
  • FIG. 15 is a longitudinal sectional configuration diagram of a main part of a solid-state imaging device according to an eleventh embodiment of the present disclosure, corresponding to FIG.
  • FIG. 16 is a longitudinal sectional configuration diagram of a main part of a solid-state imaging device according to a twelfth embodiment of the present disclosure, corresponding to FIG.
  • FIG. 17 is a block diagram showing an example of a schematic configuration of a vehicle control system.
  • FIG. 18 is an explanatory diagram showing an example of the installation positions of the outside-of-vehicle information detection unit and the imaging unit.
  • First embodiment a first example in which the present technology is applied to a solid-state imaging device will be described.
  • first embodiment a cross-sectional structure and a planar structure of the solid-state imaging device will be described.
  • a solid-state imaging device according to a modified example will also be described.
  • Second Embodiment a second example in which the structure of the filter wall is changed in the solid-state imaging device according to the first embodiment will be described. 3.
  • Third Embodiment in the third embodiment a third example in which the structure of the filter wall is changed in the solid-state imaging device according to the first embodiment will be described. 4.
  • Fourth Embodiment The fourth embodiment describes a fourth example in which the structure of the insulator disposed between the photoelectric conversion element and the color filter in the solid-state imaging device according to the first embodiment is changed. 5.
  • Fifth Embodiment a fifth example in which the structure of the filter wall in the solid-state imaging device according to the third embodiment is changed will be described. 6.
  • Sixth Embodiment In the sixth embodiment a sixth example in which the structure of the inter-pixel separator in the solid-state imaging device according to the first embodiment is changed will be described. 7.
  • the seventh embodiment describes a seventh example in which the structure of the inter-pixel separator in the solid-state imaging device according to the sixth embodiment is changed.
  • the eighth embodiment describes an eighth example in which the structure of the inter-pixel separator in the solid-state imaging device according to the first embodiment is changed.
  • Ninth Embodiment In the ninth embodiment, a ninth example in which the structure of the filter wall is changed in the solid-state imaging device according to the first embodiment will be described. 10.
  • Tenth Embodiment In the tenth embodiment a tenth example in which the structure of the color filters in the solid-state imaging device according to the first embodiment is changed will be described. 11.
  • Eleventh Embodiment An eleventh embodiment describes an eleventh example in which the structure of the light incident surface of the photoelectric conversion element in the solid-state imaging device according to the tenth embodiment is changed.
  • Twelfth Embodiment A twelfth embodiment describes a twelfth example in which the structure of the light incident surface of the photoelectric conversion element in the solid-state imaging device according to the first embodiment is changed.
  • Application Example to a Mobile Body In this application example, an example will be described in which the present technology is applied to a vehicle control system, which is an example of a mobile body control system. 14.
  • a solid-state imaging device 1 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1, 2A, 2B, 3, 4A, 4B, 5A, and 5B.
  • the arrow X direction shown as appropriate in the figure indicates one planar direction of the solid-state imaging device 1 placed on a flat surface for convenience.
  • the arrow Y direction indicates another planar direction perpendicular to the arrow X direction.
  • the arrow Z direction indicates an upward direction perpendicular to the arrow X and arrow Y directions.
  • the arrow X direction, the arrow Y direction, and the arrow Z direction exactly coincide with the X-axis direction, the Y-axis direction, and the Z-axis direction, respectively, of a three-dimensional coordinate system. Note that these directions are shown to facilitate understanding of the description, and are not intended to limit the directions of the present technology.
  • FIG. 1 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to a first embodiment.
  • Fig. 2A shows an example of a planar structure of a color filter 15 disposed in a first pixel 11 of the solid-state imaging device 1 shown in Fig. 1.
  • Fig. 2B shows an example of a planar structure in which a filter wall 8 is overlapped on the color filter 15 shown in Fig. 2A.
  • a solid-state imaging device 1 includes a first pixel 11 and a second pixel 12 in a pixel region.
  • a color filter 15 is disposed on a first photoelectric conversion element 21 that converts incident light into an electric charge.
  • three-color light color filters 15 including a red light color filter 15 (R), a green light color filter 15 (G), and a blue light color filter 15 (B) are disposed.
  • the red light color filter 15 (R) is a color filter that transmits a red light band.
  • the green light color filter 15 (G) is a color filter that transmits a green light band.
  • the blue light color filter 15 (B) is a color filter that transmits a blue light band.
  • the red light color filter 15 (R), the green light color filter 15 (G), and the blue light color filter 15 (B) are collectively referred to as color filters 15.
  • a first pixel 11 in which a red light color filter 15(R) is disposed in the first photoelectric conversion element 21 will be described as a first pixel 11(R).
  • a first pixel 11 in which a green light color filter 15(G) is disposed in the first photoelectric conversion element 21 will be described as a first pixel 11(G).
  • a first pixel 11 in which a blue light color filter 15(B) is disposed in the first photoelectric conversion element 21 will be described as a first pixel 11(B).
  • the first pixel 11(R), the first pixel 11(G), and the first pixel 11(B) will be collectively referred to as the first pixel 11 in the description.
  • the second photoelectric conversion element 22 that converts incident light into an electric charge does not have a color filter 15.
  • the second photoelectric conversion element 22 is formed with the same structure as the first photoelectric conversion element 21.
  • the second pixel 12 receives light with a wavelength in the near-infrared band, for example, between 750 nm and 1000 nm, and is configured as a so-called white pixel.
  • the first pixel 11(G) and the first pixel 11(B) are sequentially arranged in the direction of the arrow X
  • the first pixel 11(R) is arranged adjacent to the first pixel 11(G) in the direction of the arrow Y
  • the second pixel 12 is arranged adjacent to the first pixel 11(B) in the direction of the arrow Y.
  • These four pixels, the first pixel 11(G), the first pixel 11(B), the first pixel 11(R) and the second pixel 12 are regularly arranged in the directions of the arrow X and the arrow Y as unit pixels and constitute a pixel region. The following provides a detailed explanation.
  • the first pixel 11 and the second pixel 12 are configured based on a semiconductor layer 2.
  • the semiconductor layer 2 is made of, for example, a single crystal silicon (Si) substrate.
  • the arrow Z direction side of the semiconductor layer 2 is the incident side of light L.
  • a first photoelectric conversion element 21 of the first pixel 11 and a second photoelectric conversion element 22 of the second pixel 12 are disposed inside the semiconductor layer 2 on the incident side of light L.
  • both the first photoelectric conversion element 21 and the second photoelectric conversion element 22 are formed of, for example, a photodiode.
  • Inter-pixel isolation bodies 5 are disposed between the first pixels 11 and between the first pixels 11 and the second pixels 12, between the first photoelectric conversion elements 21, and between the first photoelectric conversion elements 21 and the second photoelectric conversion elements 22.
  • the inter-pixel isolation bodies 5 are configured to include an isolation groove 51 and an embedded member 52.
  • the separation groove 51 is formed as a through groove penetrating from the surface on the light L incidence side of the semiconductor layer 2 to the opposing back surface. In other words, the separation groove 51 is formed over the entirety of each of the side surfaces of the first photoelectric conversion element 21 and the second photoelectric conversion element 22 in the incidence direction of the light L (the direction opposite to the arrow Z direction).
  • the embedded member 52 is embedded in the isolation trench 51.
  • the embedded member 52 is made of an insulating material such as silicon oxide (SiO 2 ) or silicon nitride (SiN).
  • a pinning region 53 is disposed in the semiconductor layer 2 along the isolation trench 51.
  • the pinning region 53 is formed of, for example, a p-type semiconductor region.
  • the inter-pixel separator 5 configured in this manner electrically and optically separates adjacent first photoelectric conversion elements 21 from each other, and adjacent first photoelectric conversion elements 21 and second photoelectric conversion elements 22 from each other.
  • the first photoelectric conversion element 21 and the second photoelectric conversion element 22 each have an antireflection structure 25 on the surface on the light L incident side.
  • the antireflection structure 25 is a structure that forms unevenness on the surface of the semiconductor layer 2 to provide a refractive index gradient (RIG) to light.
  • a first light shield 7 is disposed between the first pixels 11 and between the first pixels 11 and the second pixels 12, between the first photoelectric conversion elements 21, and between the first photoelectric conversion elements 21 and the second photoelectric conversion elements 22.
  • the first light shield 7 is disposed on the surface of the semiconductor layer 2 on the arrow Z direction side.
  • the first light shield 7 is configured to block light L from entering the first photoelectric conversion element 21 or the second photoelectric conversion element 22.
  • the width dimension of the first light shield 7 is formed to be larger than the width dimension of the separation groove 51 of the inter-pixel separator 5.
  • the first light shield 7 is formed to contain a metal material such as tungsten (W).
  • the color filter 15 is disposed on the arrow Z direction side of the semiconductor layer 2 with the first insulator 61 and the protective film 9 interposed therebetween. In other words, the color filter 15 is disposed on the first photoelectric conversion element 21 with the protective film 9 interposed therebetween.
  • the first insulator 61 for example, SiO 2 , SiN, etc. can be used.
  • the first insulator 61 is formed to a film thickness of, for example, ⁇ /4 or more of the target light source wavelength. Note that the film thickness of the first insulator 61 can be changed depending on the application.
  • the protective film 9 for example, a SiO 2 film can be used.
  • the color filter 15 is not provided, but a second insulator 62 and a protective film 9 are provided.
  • the second insulator 62 is formed in the same layer as the first insulator 61 and is made of the same material as the first insulator 61.
  • the color filter 15 is formed, for example, from a resin material to which an organic pigment has been added.
  • the resin material may be an acrylic resin, a styrene resin, or the like.
  • the color filter 15 is formed to a thickness of, for example, 400 nm or more and 600 nm or less.
  • the optical lens 16 is disposed on the arrow Z direction side of the color filter 15. Although detailed structure and explanation are omitted, the optical lens 16 includes a lens body and an anti-reflection film formed on the surface of the lens body. When viewed in the arrow Y direction (hereinafter simply referred to as "in side view"), the optical lens 16 is formed in a curved shape protruding in the arrow Z direction for each first pixel 11 or each second pixel 12.
  • the lens body of the optical lens 16 is formed of, for example, a resin material having optical transparency.
  • the anti-reflection film is formed of, for example, a transparent material such as SiO2 .
  • the optical lenses 16 are connected to adjacent other optical lenses 16, and the plurality of optical lenses 16 are integrally formed.
  • the optical lenses 16 are configured as on-chip lenses.
  • the optical lens 16 may be disposed for every plurality of pixels, for example, for every two pixels adjacent to each other in the direction of the arrow X.
  • the pixel circuit 3 is disposed on the opposite side of the semiconductor layer 2 in the direction of the arrow Z.
  • the pixel circuit 3 performs signal processing of the charges accumulated in the first photoelectric conversion element 21 and the second photoelectric conversion element 22.
  • the pixel circuit 3 is configured to include at least a transfer transistor, a selection transistor, a reset transistor, an amplification transistor, etc. These transistors are configured, for example, of insulated gate field effect transistors (IGFETs). IGFETs include at least a metal oxide semiconductor field effect transistor (MOSFET) and a metal insulator semiconductor field effect transistor (MISFET).
  • IGFETs include at least a metal oxide semiconductor field effect transistor (MOSFET) and a metal insulator semiconductor field effect transistor (MISFET).
  • a shared pixel structure is used in which a plurality of first pixels 11 and second pixels 12 are shared by one pixel circuit 3. That is, one pixel circuit 3 is provided for a total of four pixels, that is, three first pixels 11 and one second pixel 12.
  • the number of shares is not limited to this.
  • a wiring layer 4 is disposed on the opposite side of the semiconductor layer 2 in the direction of the arrow Z.
  • a plurality of layers of wiring 41 are disposed in the wiring layer 4.
  • the wiring 41 is used for connecting the pixel circuits 3, connecting the transistors in the pixel circuits 3, and the like.
  • the multiple layers of wiring 41 are disposed within an insulating layer 42.
  • the insulating layer 42 is actually formed of multiple layers of insulating films, which are made of insulating materials such as SiO 2 and SiN.
  • a substrate carrying peripheral circuits is disposed on the opposite side of the semiconductor layer 2 in the direction of the arrow Z, with a wiring layer 4 interposed therebetween.
  • the peripheral circuits are configured to include at least a vertical drive circuit, a column signal processing circuit, a horizontal drive circuit, an output circuit, and a control circuit, for example.
  • the solid-state imaging device 1 is provided with a filter wall 8.
  • the filter wall 8 is provided between the first pixel 11 and the second pixel 12.
  • the filter walls 8 are disposed respectively between the first pixel 11(R) and the second pixel 12, between the first pixel 11(G) and the second pixel 12, and between the first pixel 11(B) and the second pixel 12.
  • the filter walls 8 are also disposed between the first pixel 11(R) and the first pixel 11(G), and between the first pixel 11(G) and the first pixel 11(B).
  • the filter wall 8 is disposed so as to surround the periphery of the first pixel 11 when viewed from the direction of the arrow Z (hereinafter simply referred to as "in a plan view").
  • the filter wall 8 is disposed between the first photoelectric conversion element 21 and the color filter 15.
  • the filter wall 8 is formed between the first insulator 61 and the protective film 9.
  • the filter wall 8 is disposed on the arrow Z direction side of the first light shielding body 7 so as to overlap the first light shielding body 7 .
  • the filter wall 8 extends more toward the center of the first pixel 11 in the horizontal direction than the filter wall 8 extends toward the center of the second pixel 12 in the horizontal direction.
  • the first pixel 11 is surrounded by a filter wall 8, and a first opening 8H1 is formed by this filter wall 8.
  • the second pixel 12 is surrounded by a filter wall 8, and a second opening 8H2 is formed by this filter wall 8.
  • the filter wall 8 is not present in either the first opening 8H1 or the second opening 8H2. Therefore, the opening area S 1 of the first opening 8 H 1 of the first pixel 11 is smaller than the opening area S 2 of the second opening 8 H 2 of the second pixel 12 .
  • the filter wall 8 is formed of an infrared cut filter. More specifically, the filter wall 8 is formed of an organic material to which a near-infrared absorbing dye is added as an organic coloring material.
  • a near-infrared absorbing dye examples include pyrrolopyrrole dyes, copper compounds, cyanine dyes, phthalocyanine compounds, immonium compounds, thiol complex compounds, transition metal oxide compounds, squarylium dyes, naphthalocyanine dyes, quataryl dyes, dithiol metal complex dyes, croconium compounds, etc.
  • a pyrrolopyrrole dye is used as the near-infrared absorbing dye.
  • the filter wall 8 has a spectral characteristic of a light transmittance of 20% or less in a wavelength range of 700 nm or more.
  • the filter wall 8 is made of a material having a maximum absorption wavelength in a wavelength range of around 850 nm.
  • the thickness of the filter wall 8 is, for example, 800 nm or more and 1200 nm or less.
  • the filter wall 8 may be made of an organic material to which an inorganic coloring material has been added, instead of an organic coloring material.
  • Data B2, G2, and R2 show the sensitivity of the first pixel according to the comparative example. More specifically, in the first pixel according to the comparative example, an infrared cut filter is disposed over the entire surface of the photoelectric conversion element. Data B2 is the sensitivity of the first pixel having a blue light color filter disposed thereon. Data G2 is the sensitivity of the first pixel having a green light color filter disposed thereon. Data R2 is the sensitivity of the first pixel having a red light color filter disposed thereon.
  • the sensitivity of the first pixel 11 according to the first embodiment relative to the sensitivity of the first pixel according to the comparative example is shown as data B1, G1, and R1.
  • a filter wall 8 forming a first opening 8H1 in the central portion is disposed in the first photoelectric conversion element 21.
  • Data B1 is the sensitivity of the first pixel 11(B) in which a color filter 15(B) is disposed.
  • Data G1 is the sensitivity of the first pixel 11(G) in which a color filter 15(G) is disposed.
  • Data R1 is the sensitivity of the first pixel 11(R) in which a color filter 15(R) is disposed.
  • the sensitivity of the first pixel 11 according to the first embodiment is greater than the sensitivity of the first pixel according to the comparative example.
  • the sensitivity of the first pixel 11 is improved by, for example, about 10% or more compared to the sensitivity of the first pixel.
  • the solid-state imaging device 1 includes the first pixel 11, the second pixel 12, and the filter wall 8, as shown in FIGS. 1, 2A, and 2B.
  • a color filter 15 is disposed on a first photoelectric conversion element 21 that converts light into an electric charge.
  • a color filter 15 is not disposed on a second photoelectric conversion element 22 that converts light into an electric charge.
  • the filter wall 8 is disposed between the first pixel 11 and the second pixel 12. This filter wall 8 is formed of an infrared cut filter. More specifically, the filter wall 8 is disposed so as to surround the periphery of the first pixel 11.
  • the filter wall 8 is disposed between the first photoelectric conversion element 21 and the color filter 15.
  • the filter wall 8 is disposed between the first pixel 11 and the second pixel 12, and the filter wall 8 is formed of an infrared cut filter, so that it is possible to effectively suppress or prevent color mixing of light in the near-infrared band in each of the first pixel 11 and the second pixel 12.
  • the first pixel 11 has the first opening 8H1 surrounded by the filter wall 8, it is possible to take in light in the visible light band through the first opening 8H1 into the first photoelectric conversion element 21. In other words, as shown in FIG. 3, the sensitivity of the first pixel 11 can be improved.
  • the solid-state imaging device 1 further includes a first light shielding body 7.
  • the first light shielding body 7 is disposed between the first pixel 11 and the second pixel 12, and blocks light L.
  • the filter wall 8 is disposed so as to overlap the first light shielding body 7. For this reason, the first light shielding body 7 is provided, so that it is possible to block light in the visible light band and light in the near-infrared light band between the first pixels 11 and between the first pixel 11 and the second pixel 12. Therefore, it is possible to effectively suppress or prevent not only color mixing of light in the visible light band but also color mixing of light in the near-infrared light band.
  • the opening area S1 of the first opening 8H1 surrounded by the filter wall 8 is smaller than the opening area S2 of the second opening 8H2 surrounded by the filter wall 8 in the second pixel 12.
  • the opening area S2 of the second opening 8H2 is set large, it is possible to increase the amount of light in the near-infrared band received by the second pixel 12. Therefore, a highly sensitive monitoring sensor can be constructed using the solid-state imaging device 1.
  • a solid-state imaging device 1 according to a first modified example of the first embodiment of the present disclosure will be described with reference to FIGS. 4A and 4B.
  • components that are identical or substantially identical to the components of the solid-state imaging device 1 of the first embodiment are given the same symbols, and duplicate explanations are omitted.
  • FIG. 4A shows an example of a planar structure of the color filter 15 disposed in the first pixel 11 of the solid-state imaging device 1 shown in Fig. 1.
  • Fig. 4B shows an example of a planar structure in which a filter wall 8 is overlapped on the color filter 15 shown in Fig. 4A. 4A and 4B, in the solid-state imaging device 1 according to the first modification, the output (sensitivity) of the first pixel 11 (G) is adjusted.
  • a filter wall 8 is disposed surrounding each of the first pixels 11(R) and 11(B).
  • a first opening 8H1 is formed in each of the first pixels 11(R) and 11(B) by the filter wall 8.
  • the first opening 8H1 has an opening area S1.
  • the second opening 8H2 is formed by the filter wall 8.
  • the second opening 8H2 has an opening area S2.
  • the first pixel 11(G) is surrounded by a filter wall 8 that surrounds each of the first pixel 11(R) and the first pixel 11(B), similar to the second pixel 12.
  • This filter wall 8 forms a first opening 8H3 in the first pixel 11(G).
  • the sensitivity of the first pixel 11(G) is smaller than, for example, the sensitivity of the first pixel 11(R). Therefore, when the opening area S3 of the first opening 8H3 is increased, the amount of light L received can be increased, and the sensitivity of the first pixel 11(G) can be increased.
  • the opening area S3 of the first opening 8H3 is increased in the first pixel 11(G), but the opening area S1 of the first opening 8H1 may also be increased in the first pixel 11(B). This makes it possible to set the sensitivity of each of the first pixels 11(R), 11(G), and 11(B) to be constant or uniform, for example.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first embodiment described above, so a description thereof will be omitted here.
  • the opening area S3 of the first opening 8H3 can be adjusted. This makes it possible to adjust the output (sensitivity) of the first pixel 11(G).
  • FIG. 5A shows an example of a planar structure of the color filter 15 disposed in the first pixel 11 of the solid-state imaging device 1 shown in Fig. 1.
  • Fig. 5B shows an example of a planar structure in which a filter wall 8 is overlapped on the color filter 15 shown in Fig. 5A. 5A and 5B, in the solid-state imaging device 1 according to the second modification, the output (sensitivity) of the first pixel 11 (G) is adjusted.
  • a filter wall 8 is disposed surrounding each of the first pixels 11(R) and 11(B).
  • the filter wall 8 has a width dimension L1.
  • a first opening 8H1 is formed in each of the first pixels 11(R) and 11(B) by the filter wall 8.
  • the first opening 8H1 has an opening area S1.
  • the second opening 8H2 is formed by the filter wall 8.
  • the second opening 8H2 has an opening area S2.
  • the first pixel 11(G) is surrounded by a filter wall 8 that is set to a width dimension L2 narrower than the width dimension L1 of the filter walls 8 that surround each of the first pixel 11(R) and the first pixel 11(B).
  • This filter wall 8 forms a first opening 8H3 in the first pixel 11(G).
  • the opening area S3 of the first opening 8H3 is smaller than the opening area S2 of the second opening 8H2 and larger than the opening area S1 of the first opening 8H1 (S2>S3>S1).
  • the sensitivity of the first pixel 11(G) is smaller than, for example, the sensitivity of the first pixel 11(R). Therefore, when the opening area S3 of the first opening 8H3 is increased, the amount of light L received can be increased, and the sensitivity of the first pixel 11(G) can be increased.
  • the opening area S3 of the first opening 8H3 is increased in the first pixel 11(G), but the opening area S1 of the first opening 8H1 may also be increased in the first pixel 11(B). This makes it possible to set the sensitivity of each of the first pixels 11(R), 11(G), and 11(B) to a constant value, for example.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first modified example described above, so a description thereof will be omitted here.
  • FIG. 6 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the second embodiment.
  • the filter wall 8 is configured to protrude horizontally from a center position 5C of the inter-pixel separator 5 toward the first pixel 11.
  • the filter wall 8 is not configured to have a bilaterally symmetrical structure with respect to the center position 5C.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first embodiment described above, so a description thereof will be omitted here.
  • a solid-state imaging device 1 according to a third embodiment of the present disclosure will be described with reference to Fig. 7.
  • the structure of the filter wall 8 of the solid-state imaging device 1 according to the first embodiment is changed.
  • FIG. 7 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the third embodiment. 7 , the solid-state imaging device 1 does not have the first light shielding body 7 of the solid-state imaging device 1 according to the first embodiment. In other words, only the filter walls 8 are provided between the first pixels 11 and between the first pixel 11 and the second pixel 12.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first embodiment described above, so a description thereof will be omitted here.
  • the solid-state imaging device 1 does not have a first light shield 7, so the structure can be simplified.
  • a solid-state imaging device 1 according to a fourth embodiment of the present disclosure will be described with reference to Fig. 8.
  • the structures of the first insulator 61 and the second insulator 62 disposed between the first photoelectric conversion element 21 and the color filter 15 of the solid-state imaging device 1 according to the first embodiment are changed.
  • FIG. 8 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the fourth embodiment.
  • a first insulator 61 and a second insulator 62 are provided which are thicker than the first insulator 61 and the second insulator 62 of the solid-state imaging device 1 according to the first embodiment.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first embodiment described above, so a description thereof will be omitted here.
  • a solid-state imaging device 1 according to a fifth embodiment of the present disclosure will be described with reference to Fig. 9.
  • the solid-state imaging device 1 according to the fifth embodiment will be described as an example in which the structure of the filter wall 8 in the solid-state imaging device 1 according to the third embodiment is changed.
  • FIG. 9 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the fifth embodiment. 9, in the solid-state imaging device 1 according to the third embodiment, a part 81 of the filter wall 8 extends to the inter-pixel separator 5. This will be described in detail.
  • a portion 81 extending from the filter wall 8 is disposed on the side opposite the direction of the arrow Z of the filter wall 8. This portion 81 extends into the pixel separator 5.
  • the portion 81 may be disposed on a portion of the side surface of the first photoelectric conversion element 21 and the second photoelectric conversion element 22, or on the entire side surface.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the third embodiment described above, so a description thereof will be omitted here.
  • a part 81 of the filter wall 8 extends to the inter-pixel separator 5. This makes it possible to more effectively suppress or prevent color mixing of light in the near-infrared band in each of the first pixel 11 and the second pixel 12. Therefore, it is possible to improve the decrease in sensitivity of the first pixel 11 while further improving color mixing between the first pixel 11 that receives light in the visible light band and the second pixel 12 that serves as a white pixel that receives light in the near-infrared light band.
  • a solid-state imaging device 1 according to a sixth embodiment of the present disclosure will be described with reference to Fig. 10.
  • the solid-state imaging device 1 according to the sixth embodiment will be described as an example in which the structure of the inter-pixel separator 5 in the solid-state imaging device 1 according to the first embodiment is changed.
  • FIG. 10 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the sixth embodiment.
  • a second light shield 71 is disposed in a part of the inter-pixel separator 5. This will be described in detail.
  • the second light shield 71 is embedded in the inter-pixel separator 5 over a portion of each of the side surfaces of the first photoelectric conversion element 21 and the second photoelectric conversion element 22.
  • the second light shield 71 is formed of a light absorbing material or a light reflecting material and is configured to block light.
  • the light absorbing material may be, for example, W.
  • the light reflective material may be, for example, aluminum (Al).
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first embodiment described above, so a description thereof will be omitted here.
  • a second light shield 71 is embedded in the inter-pixel separator 5 as shown in FIG. This makes it possible to more effectively suppress or prevent color mixing of light in the visible light band and light in the near-infrared light band between the first pixels 11 and between the first pixels 11 and the second pixels 12. This makes it possible to improve the decrease in sensitivity of the first pixels 11 while further improving color mixing between the first pixels 11 and between the first pixels 11 and the second pixels 12.
  • a solid-state imaging device 1 according to a seventh embodiment of the present disclosure will be described with reference to Fig. 11.
  • the solid-state imaging device 1 according to the seventh embodiment will be described as an example in which the structure of the inter-pixel separator 5 in the solid-state imaging device 1 according to the sixth embodiment is changed.
  • FIG. 11 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the seventh embodiment. 11, in the solid-state imaging device 1, a second light shield 71 is disposed on the inter-pixel separator 5. This will be described in detail.
  • the second light shield 71 is embedded in the inter-pixel separator 5 over the entire side surfaces of the first photoelectric conversion element 21 and the second photoelectric conversion element 22. In other words, the second light shield 71 is disposed over the entire depth direction of the separation groove 51 of the inter-pixel separator 5.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the sixth embodiment described above, so a description thereof will be omitted here.
  • a solid-state imaging device 1 according to an eighth embodiment of the present disclosure will be described with reference to Fig. 12.
  • the solid-state imaging device 1 according to the eighth embodiment will be described as an example in which the structure of the inter-pixel separator 5 in the solid-state imaging device 1 according to the first embodiment is changed.
  • FIG. 12 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the eighth embodiment. 12, in the solid-state imaging device 1, the inter-pixel separator 5 is disposed along a part of each side surface of the first photoelectric conversion element 21 and the second photoelectric conversion element 22. In other words, the separation groove 51 of the inter-pixel separator 5 does not penetrate the semiconductor layer 2 in the thickness direction.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first embodiment described above, so a description thereof will be omitted here.
  • a solid-state imaging device 1 according to a ninth embodiment of the present disclosure will be described with reference to Fig. 13.
  • the solid-state imaging device 1 according to the ninth embodiment is an example in which the structure of the filter wall 8 in the solid-state imaging device 1 according to the first embodiment is changed.
  • FIG. 13 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the ninth embodiment.
  • the filter wall 8 is provided to extend in the direction of the arrow Z. A detailed description will be given.
  • the filter wall 8 extends beyond the surface of the protective film 9 on the arrow Z direction side.
  • the color filter 15 is disposed exactly within the area surrounded by the filter wall 8. In other words, the filter wall 8 is disposed along the side of the color filter 15.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first embodiment described above, so a description thereof will be omitted here.
  • the filter wall 8 is extended toward the color filter 15 as shown in FIG. This makes it possible to more effectively suppress or prevent color mixing of light in the near-infrared band between the first pixel 11 and the second pixel 12. Therefore, it is possible to improve the decrease in sensitivity of the first pixel 11 while further improving color mixing between the first pixel 11 and the second pixel 12.
  • a solid-state imaging device 1 according to a tenth embodiment of the present disclosure will be described with reference to Fig. 14.
  • the solid-state imaging device 1 according to the tenth embodiment is an example in which the structure of the color filter 15 in the solid-state imaging device 1 according to the first embodiment is changed.
  • FIG. 14 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the tenth embodiment. 14, in the solid-state imaging device 1, the color filter 15 is disposed within a region surrounded by the filter wall 8. In other words, the color filter 15 is disposed in substantially the same layer as the filter wall 8.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first embodiment described above, so a description thereof will be omitted here.
  • the filter wall 8 and the color filter 15 are disposed in substantially the same layer. This allows the thickness of the solid-state imaging device 1 in the direction of the arrow Z to be reduced, thereby realizing a low-profile solid-state imaging device 1.
  • a solid-state imaging device 1 according to an eleventh embodiment of the present disclosure will be described with reference to Fig. 15.
  • the solid-state imaging device 1 according to the eleventh embodiment is an application example of the solid-state imaging device 1 according to the tenth embodiment.
  • FIG. 15 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the eleventh embodiment. As shown in FIG. 15, in the solid-state imaging device 1 according to the tenth embodiment, the anti-reflection structures 25 of the first photoelectric conversion elements 21 and the second photoelectric conversion elements 22 are omitted.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the tenth embodiment described above, so a description thereof will be omitted here.
  • Twelfth embodiment A solid-state imaging device 1 according to a twelfth embodiment of the present disclosure will be described with reference to Fig. 16.
  • the solid-state imaging device 1 according to the twelfth embodiment is an application example of the solid-state imaging device 1 according to the first embodiment.
  • FIG. 16 shows an example of a cross-sectional structure of a main part of a pixel region of a solid-state imaging device 1 according to the twelfth embodiment. As shown in FIG. 16, in the solid-state imaging device 1 according to the first embodiment, the anti-reflection structures 25 of the first photoelectric conversion elements 21 and the second photoelectric conversion elements 22 are omitted.
  • the components other than those described above are the same or substantially the same as the components of the solid-state imaging device 1 according to the first embodiment described above, so a description thereof will be omitted here.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, or a robot.
  • FIG. 17 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology disclosed herein can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050.
  • Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio/video output unit 12052, and an in-vehicle network I/F (Interface) 12053.
  • the drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 functions as a control device for a drive force generating device for generating the drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force for the vehicle.
  • the body system control unit 12020 controls the operation of various devices installed in the vehicle body according to various programs.
  • the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, tail lamps, brake lamps, turn signals, and fog lamps.
  • radio waves or signals from various switches transmitted from a portable device that replaces a key can be input to the body system control unit 12020.
  • the body system control unit 12020 accepts the input of these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.
  • the outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000.
  • the image capturing unit 12031 is connected to the outside-vehicle information detection unit 12030.
  • the outside-vehicle information detection unit 12030 causes the image capturing unit 12031 to capture images outside the vehicle and receives the captured images.
  • the outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received.
  • the imaging unit 12031 can output the electrical signal as an image, or as distance measurement information.
  • the light received by the imaging unit 12031 may be visible light, or may be invisible light such as infrared light.
  • the in-vehicle information detection unit 12040 detects information inside the vehicle.
  • a driver state detection unit 12041 that detects the state of the driver is connected.
  • the driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's degree of fatigue or concentration based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.
  • the microcomputer 12051 can calculate control target values for the driving force generating device, steering mechanism, or braking device based on information inside and outside the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, and output control commands to the drive system control unit 12010.
  • the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an Advanced Driver Assistance System (ADAS), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 can also control the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, thereby performing cooperative control aimed at automatic driving, which allows the vehicle to travel autonomously without relying on the driver's operation.
  • the microcomputer 12051 can also output control commands to the body system control unit 12030 based on information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching high beams to low beams.
  • the audio/image output unit 12052 transmits at least one output signal of audio and image to an output device capable of visually or audibly notifying the occupants of the vehicle or the outside of the vehicle of information.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices.
  • the display unit 12062 may include, for example, at least one of an on-board display and a head-up display.
  • FIG. 18 shows an example of the installation position of the imaging unit 12031.
  • the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.
  • the imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front nose, side mirrors, rear bumper, back door, and upper part of the windshield inside the vehicle cabin of the vehicle 12100.
  • the imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100.
  • the imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100.
  • the imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100.
  • the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin is mainly used to detect leading vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.
  • FIG. 18 shows an example of the imaging ranges of the imaging units 12101 to 12104.
  • Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose
  • imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively
  • imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door.
  • an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple imaging elements, or an imaging element having pixels for detecting phase differences.
  • the microcomputer 12051 can obtain the distance to each solid object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, and can extract as a preceding vehicle, in particular, the closest solid object on the path of the vehicle 12100 that is traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km/h or faster). Furthermore, the microcomputer 12051 can set the inter-vehicle distance that should be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on the driver's operation.
  • automatic braking control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects, such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, based on the distance information obtained from the imaging units 12101 to 12104, and can use the data to automatically avoid obstacles.
  • the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see.
  • the microcomputer 12051 determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or exceeds a set value and there is a possibility of a collision, it can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by forcibly decelerating or steering to avoid a collision via the drive system control unit 12010.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured image of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian.
  • the audio/image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian.
  • the audio/image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.
  • the technology disclosed herein can be applied to at least one of the imaging units 12101 to 12104.
  • at least one of the imaging units 12101 to 12104 is constructed as a monitoring sensor.
  • a solid-state imaging device includes a first pixel, a second pixel, and a filter wall.
  • the first pixel has a color filter disposed on a first photoelectric conversion element that converts light into an electric charge.
  • the second pixel has no color filter disposed on a second photoelectric conversion element that converts light into an electric charge.
  • the filter wall is disposed between the first pixel and the second pixel.
  • the filter wall is formed of an infrared cut filter. Therefore, it is possible to improve the decrease in sensitivity of the first pixel while improving color mixing between the first pixel that receives light in the visible light band and the second pixel that receives light in the near-infrared light band.
  • a solid-state imaging device further includes a first light shielding body disposed between the first pixel and the second pixel and blocking light, and the filter wall is disposed so as to overlap the first light shielding body. Therefore, it is possible to improve the decrease in sensitivity of the first pixels while improving color mixing between the first pixels and between the first pixels and the second pixels.
  • a solid-state imaging device is the solid-state imaging device according to the first embodiment, further comprising an inter-pixel separator for electrically and optically isolating the first and second photoelectric conversion elements between the first and second photoelectric conversion elements, the filter wall extending over at least a portion of the inter-pixel separator, and a second light shielding body for blocking light embedded in the inter-pixel separator. Therefore, it is possible to improve the decrease in sensitivity of the first pixels while further improving color mixing between the first pixels and between the first pixels and the second pixels.
  • the present technology has the following configuration: According to the present technology having the following configuration, in a solid-state imaging device, it is possible to improve a decrease in sensitivity of a first pixel while improving color mixing between a first pixel that receives light in a visible light band and a second pixel that receives light in a near-infrared light band.
  • a first pixel including a first photoelectric conversion element that converts light into an electric charge and a color filter disposed on the first photoelectric conversion element; a second pixel in which the color filter is not provided on a second photoelectric conversion element that converts light into an electric charge; a filter wall disposed between the first pixel and the second pixel and formed of an infrared cut filter.
  • the filter wall extends over at least a portion of the inter-pixel separator.

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  • Engineering & Computer Science (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
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Abstract

Ce dispositif d'imagerie à semi-conducteurs comprend : un premier pixel, dans lequel un filtre coloré est disposé sur un premier élément de conversion photoélectrique qui convertit la lumière en une charge électrique ; un second pixel, dans lequel un filtre coloré n'est pas fourni à un second élément de conversion photoélectrique qui convertit la lumière en une charge électrique ; et une paroi filtrante qui est disposée entre le premier pixel et le second pixel, et qui est formée par un filtre de coupure infrarouge.
PCT/JP2023/040027 2022-12-23 2023-11-07 Dispositif d'imagerie à semi-conducteurs Ceased WO2024135127A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007329380A (ja) * 2006-06-09 2007-12-20 Sony Corp 物理情報取得方法、物理情報取得装置、半導体装置、信号処理装置
JP2020027884A (ja) * 2018-08-13 2020-02-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
WO2021215337A1 (fr) * 2020-04-20 2021-10-28 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie à semi-conducteurs et dispositif électronique

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007329380A (ja) * 2006-06-09 2007-12-20 Sony Corp 物理情報取得方法、物理情報取得装置、半導体装置、信号処理装置
JP2020027884A (ja) * 2018-08-13 2020-02-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
WO2021215337A1 (fr) * 2020-04-20 2021-10-28 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie à semi-conducteurs et dispositif électronique

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