WO2024106117A1 - Conductive substrate - Google Patents
Conductive substrate Download PDFInfo
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- WO2024106117A1 WO2024106117A1 PCT/JP2023/037659 JP2023037659W WO2024106117A1 WO 2024106117 A1 WO2024106117 A1 WO 2024106117A1 JP 2023037659 W JP2023037659 W JP 2023037659W WO 2024106117 A1 WO2024106117 A1 WO 2024106117A1
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- conductive
- substrate
- electrode
- layer
- flat surface
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/20—Metallic electrodes, e.g. using a stack of layers
Definitions
- This disclosure relates to conductive substrates.
- Conductive substrates that are applied to solar cells, OLEDs, light control devices, etc. are known.
- a conductive substrate that is applied to solar cells is shown in Patent Document 1.
- Patent Document 1 discloses an organic thin-film solar cell that uses a transparent resin film.
- the organic thin-film solar cell shown in FIG. 7 of Patent Document 1 includes a transparent substrate made of a transparent resin film, a mesh electrode formed on the transparent substrate, a transparent electrode formed on the transparent substrate, a hole extraction layer formed on the transparent electrode, a photoelectric conversion layer formed on the hole extraction layer, an electron extraction layer formed on the photoelectric conversion layer, and a counter electrode formed on the electron extraction layer.
- the mesh electrode is configured to protrude from the top surface of the transparent substrate toward the side where the counter electrode is located.
- each layer may be divided in the longitudinal direction of the convex shape at the corners of each mesh electrode. In this case, the function of each layer is impaired.
- all layers from the transparent electrode located around each mesh electrode to the counter electrode may slip down toward the transparent substrate, and the counter electrode formed on the electron extraction layer may become closer to the corners of each mesh electrode. In this case, the counter electrode may come into contact with the corners of each mesh electrode, which may cause an electrical short circuit.
- Patent Document 1 could result in the original functionality of the device to which the conductive substrate is applied being impaired.
- This disclosure has been made in light of these points, and its purpose is to prevent the inherent functionality of devices to which a conductive substrate is applied from being impaired.
- one embodiment of the present disclosure is a conductive substrate used to attach a functional layer and a second electrode, the conductive substrate comprising a substrate having a flat surface and a first electrode formed on the substrate.
- the first electrode is composed of a plurality of conductive wires, each made of a conductive metal, embedded on the side of the substrate where the flat surface is located.
- the flat surface of the substrate is configured to allow the functional layer and the second electrode to be disposed thereon.
- the surface of each of the plurality of conductive wires is configured to be substantially flush with the flat surface.
- FIG. 1 is a partially enlarged plan view that illustrates a schematic enlargement of a portion of a conductor pattern in a conductive member including a conductive substrate according to an embodiment of the present disclosure.
- FIG. 2 is a cross-sectional view taken along line II-II of FIG.
- FIG. 3 is a partially enlarged cross-sectional view showing a portion III in FIG. 2 , and is also a diagram showing a schematic diagram of a carrier path when a conductive member having a conductive substrate is applied to a solar cell.
- FIG. 4 is an enlarged schematic diagram showing a state in which the flat surface of the substrate and the surfaces of the conductive lines are flush with each other.
- FIG. 5 is a diagram corresponding to FIG.
- FIG. 3 and illustrating, as a first modified example of the embodiment, a carrier path when a conductive member having a conductive substrate is applied to an OLED.
- FIG. 6 is a diagram corresponding to FIG. 3 and illustrating, as a second modified example of the embodiment, a carrier path when a conductive member having a conductive substrate is applied to a light-adjusting device.
- FIG. 7 is an enlarged schematic diagram showing a state in which the surface of the conductive line is recessed below the flat surface of the substrate as a third modified example of the embodiment.
- FIG. 8 is a view corresponding to FIG. 1, which shows an enlarged schematic view of a part of a conductor pattern different from the conductor pattern shown in FIG. 1, as a fourth modified example of the embodiment.
- FIG. 1 shows an enlarged schematic view of a part of a conductor pattern different from the conductor pattern shown in FIG. 1, as a fourth modified example of the embodiment.
- FIG. 9 is a view corresponding to FIG. 3 that illustrates a schematic cross-sectional structure of a conductive member having a conductive substrate on which a first electrode is provided and a conductive substrate on which a second electrode is provided, as a fifth modified example of an embodiment.
- the embodiment of the present disclosure is a conductive substrate 1 (see FIG. 2) used to attach a functional layer 10a and a second electrode 14. As shown in FIG. 2, the conductive substrate 1 includes a substrate 2 and a first electrode 6. The conductive substrate 1 is disposed below the functional layer 10a (below, on the bottom side of a hole transport layer 11a).
- FIG. 1 shows a schematic diagram of a portion of the conductive member 100.
- the conductive member 100 includes a conductive substrate 1, a functional layer 10a, and a second electrode 14.
- the conductive member 100 can be applied to solar cells, OLEDs (organic light-emitting diodes), dimming devices, and the like. This embodiment illustrates an example in which the conductive member 100 is applied to a solar cell.
- the direction from the left side to the right side of the paper in FIG. 1 is defined as the "X direction,” while the direction from the bottom to the top of the paper in FIG. 1 is defined as the "Y direction.”
- the side on which the second electrode 14, described later, is located in the thickness direction of the conductive member 100 shown in FIG. 2 is defined as the "upper side” of the conductive member 100, and the opposite side (the side on which the film substrate 3, described later, is located) is defined as the "lower side” of the conductive member 100, and the positional relationship of each element constituting the conductive member 100 is defined. Note that this positional relationship is unrelated to the actual direction in the device in which the conductive member 100 is incorporated.
- the substrate 2 has transparency and light transmittance.
- the substrate 2 has a flat surface 2a.
- the flat surface 2a corresponds to the upper surface of a resin layer 4, which will be described later.
- the substrate 2 includes a film substrate 3.
- the film substrate 3 is made of a resin material that is flexible, transparent, and light-transmitting.
- the thickness of the film substrate 3 is, for example, 20 ⁇ m to 200 ⁇ m.
- the resin material examples include PET (polyethylene terephthalate), polycarbonate, COP (cycloolefin polymer), and COC (cycloolefin copolymer).
- the substrate 2 includes a resin layer 4.
- the resin layer 4 is made of a resin material that is insulating and optically transparent.
- the thickness of the resin layer 4 is, for example, 1 ⁇ m to 10 ⁇ m.
- the resin layer 4 is laminated on the upper side of the film substrate 3.
- the upper surface of the resin layer 4 i.e., the flat surface 2a
- the upper surface of the resin layer 4 is formed to be substantially flat, except for the recessed portion 5 described below.
- the resin layer 4 has a plurality of bottomed recesses 5 that are recessed downward from the upper surface of the resin layer 4.
- the recesses 5 extend linearly on the upper surface (flat surface 2a) of the resin layer 4 to form a predetermined pattern, which will be described later.
- the recesses 5 are formed on the upper surface of the resin layer 4 by, for example, a thermal embossing method, a photolithographic etching method, laser processing, or the like.
- the first electrode 6 is made of a conductor pattern formed on the flat surface 2a side (the upper surface side of the resin layer 4) of the substrate 2.
- the conductor pattern is made up of a plurality of conductive wires 7.
- the plurality of conductive wires 7 are arranged on the flat surface 2a side of the substrate 2.
- the conductor pattern is arranged in a predetermined pattern on the flat surface 2a of the substrate 2.
- Figure 1 shows a mesh pattern in which multiple conductive wires 7 are arranged in a mesh shape as an example of the predetermined pattern.
- the mesh pattern is configured such that a plurality of conductive lines 7 extending in the X direction and a plurality of conductive lines 7 extending in the Y direction intersect with each other.
- the plurality of conductive lines 7 extending in the X direction are arranged at equal intervals from each other.
- the plurality of conductive lines 7 extending in the Y direction are arranged at equal intervals from each other.
- one cell constituted by two conductive lines 7, 7 extending in the X direction and adjacent to each other, and two conductive lines 7, 7 extending in the Y direction and adjacent to each other, is formed in a square shape.
- Each conductive wire 7 is thinned.
- the width of each conductive wire 7 is configured to be, for example, 10 ⁇ m or less.
- each conductive wire 7 is made of a conductive metal embedded in each recess 5 of the substrate 2.
- Suitable conductive metals include, for example, copper (Cu), silver (Ag), gold (Au), aluminum (Al), nickel (Ni), or an alloy containing at least one of these metals.
- each conductive wire 7 is configured to be substantially flush with the flat surface 2a of the substrate 2 when exposed from the flat surface 2a of the substrate 2.
- this embodiment illustrates a state in which the flat surface 2a of the substrate 2 and the surface of each conductive wire 7 are completely flush with each other. Note that, for convenience of illustration, the hole transport layer 11a is omitted in FIG. 4.
- the functional layer 10a is composed of three layers. Specifically, the functional layer 10a is composed of a hole transport layer 11a, a charge generation layer 12a, and an electron transport layer 13a. The hole transport layer 11a, the charge generation layer 12a, and the electron transport layer 13a are laminated in this order on the flat surface 2a (the upper surface of the resin layer 4) of the substrate 2.
- the functional layer 10a is configured to have a thickness of 3.0 ⁇ m or less. Preferably, the thickness of the functional layer 10a is 1.0 ⁇ m or less.
- the charge generation layer 12a has an electron donating function. Specifically, the charge generation layer 12a is configured to generate charge separation by utilizing a pn junction formed within the charge generation layer 12a.
- the charge generating layer 12a contains an electron donating material.
- the electron donating material is a material that can be formed into a film by a wet coating method.
- an electron donating conductive polymer material is suitable as the electron donating material.
- electron-donating conductive polymer materials include polyphenylene, polyphenylenevinylene, polysilane, polythiophene, polycarbazole, polyvinylcarbazole, porphyrin, polyacetylene, polypyrrole, polyaniline, polyfluorene, polyvinylpyrene, polyvinylanthracene, and derivatives thereof, as well as copolymers thereof, or phthalocyanine-containing polymers, carbazole-containing polymers, organometallic polymers, etc.
- the electron-donating conductive polymer material is a thiophene-fluorene copolymer, a polyalkylthiophene, a phenyleneethynylene-phenylenevinylene copolymer, a phenyleneethynylene-thiophene copolymer, a phenyleneethynylene-fluorene copolymer, a fluorene-phenylenevinylene copolymer, a thiophene-phenylenevinylene copolymer, or the like.
- the hole transport layer 11a has the function of transporting the holes generated by the charge generation layer 12a toward each conductive line 7.
- the hole transport layer 11a increases the transport efficiency of the holes generated by the charge generation layer 12a. As a result, the efficiency of photoelectric conversion in the conductive member 100 applied as a solar cell is improved.
- Suitable materials for the hole transport layer 11a include, for example, conductive organic compounds such as doped polyaniline, polyphenylene vinylene, polythiophene, polypyrrole, polyparaphenylene, polyacetylene, and triphenyldiamine (TPD), or organic materials that form charge transfer complexes consisting of electron donor compounds such as tetrathiofulvalene and tetramethylphenylenediamine and electron acceptor compounds such as tetracyanoquinodimethane and tetracyanoethylene.
- conductive organic compounds such as doped polyaniline, polyphenylene vinylene, polythiophene, polypyrrole, polyparaphenylene, polyacetylene, and triphenyldiamine (TPD), or organic materials that form charge transfer complexes consisting of electron donor compounds such as tetrathiofulvalene and tetramethylphenylenediamine and electron acceptor compounds such as tetracyanoquinodimethane and
- the hole transport layer 11a may be a thin film made of a metal material such as Au, In, Ag, or Pd.
- This thin film may be made of a metal material such as Au, In, Ag, or Pd alone, or may be a combination of these metal materials and the organic materials described above.
- the electron transport layer 13a has the function of transporting electrons generated by the charge generation layer 12a toward the second electrode 14 described below.
- the electron transport layer 13a increases the transport efficiency of the electrons generated by the charge generation layer 12a. As a result, the efficiency of photoelectric conversion in the conductive member 100 applied as a solar cell is improved.
- Examples of materials for the electron transport layer 13a include conductive organic compounds such as doped polyaniline, polyphenylene vinylene, polythiophene, polypyrrole, polyparaphenylene, polyacetylene, and triphenyldiamine (TPD), or organic materials that form charge transfer complexes consisting of electron donor compounds such as tetrathiofulvalene and tetramethylphenylenediamine and electron acceptor compounds such as tetracyanoquinodimethane and tetracyanoethylene.
- conductive organic compounds such as doped polyaniline, polyphenylene vinylene, polythiophene, polypyrrole, polyparaphenylene, polyacetylene, and triphenyldiamine (TPD), or organic materials that form charge transfer complexes consisting of electron donor compounds such as tetrathiofulvalene and tetramethylphenylenediamine and electron acceptor compounds such as tetracyanoquinodimethane and tetracyan
- a metal-doped layer with an alkali metal or an alkaline earth metal can be used as the material for the electron transport layer 13a.
- the metal-doped layer include bathocuproine (BCP) or bathophenanthrone (Bphen) and Li, Cs, Ba, Sr, etc.
- the second electrode 14 is disposed on the upper surface of the functional layer 10a (the upper surface of the electron transport layer 13a) by lamination. That is, the second electrode 14 faces the first electrode 6 in the thickness direction of the substrate 2 with the functional layer 10a sandwiched therebetween.
- the second electrode 14 is made of a conductive metal material.
- This metal material may include Li, In, Al, Ca, Mg, Sm, Tb, Yb, Zr, LiF, Au, Ag, etc.
- the second electrode 14 may also be made of a metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a transparent conductive polymer such as PEDOT/PSS.
- the second electrode 14 is exemplified as a metal layer composed of a single layer (see Figures 2 and 3).
- the second electrode 14 is formed, for example, by a vacuum deposition method or a pattern deposition method using a metal mask.
- the second electrode 14 may be a laminated arrangement of multiple layers each made of a different metal material.
- the second electrode 14 may also be a solid electrode formed on the entire top surface of the charge generating layer 12a, or may be configured with thin metal wires formed in a predetermined pattern.
- the charge generation layer 12a generates carriers (electrons and holes) by light energy.
- the electrons (e1 to e4 shown in Fig. 3) generated by the charge generation layer 12a are transported toward the second electrode 14 via the electron transport layer 13a.
- the holes (h1 to h4 shown in Fig. 3) generated by the charge generation layer 12a are transported to the first electrode 6 via the hole transport layer 11a.
- each conductive line 7 is configured to be substantially flush with the flat surface 2a. That is, each conductive line 7 is configured not to protrude from the flat surface 2a of the substrate 2. According to this configuration, even if the functional layer 10a is formed relatively thin, each conductive line 7 is not convex, and therefore, unlike the configuration of the prior art, each functional layer 10a is not divided in the thickness direction of the substrate 2. Furthermore, since there is no risk of the functional layer 10a being divided, each conductive line 7 does not come into contact with the second electrode 14, and no electrical short circuit occurs. Therefore, it is possible to prevent the original function of the device to which the conductive member 100 is applied (a solar cell in this embodiment) from being impaired.
- the conductive member 100 is applied to a solar cell, but the present invention is not limited to this.
- the conductive member 100 may be applied to an OLED (organic light-emitting diode) as in Modification 1 shown in FIG.
- the functional layer 10a is replaced with a functional layer 10b.
- the functional layer 10b is composed of a hole transport layer 11b, a light emitting layer 12b, and an electron transport layer 13b.
- the hole transport layer 11b, the light emitting layer 12b, and the electron transport layer 13b are layered in this order on the flat surface 2a (the upper surface of the resin layer 4) of the substrate 2.
- the second electrode 14 is layered on the upper side of the electron transport layer 13b.
- the functional layer 10b is configured to have a thickness of 3.0 ⁇ m or less.
- the thickness of the functional layer 10b is 1.0 ⁇ m or less.
- the electron transport layer 13b has a function of transporting electrons (e1 to e3 shown in FIG. 5) supplied from the second electrode 14 toward the light-emitting layer 12b.
- the hole transport layer 11b has a function of transporting holes (h1 to h4 shown in FIG. 5) supplied from the first electrode 6 toward the light-emitting layer 12b.
- the electrons supplied from the electron transport layer 13b and the holes supplied from the hole transport layer 11b recombine.
- the light-emitting layer 12b has a function of emitting light when the molecules constituting the light-emitting layer 12b are excited by the energy generated by the recombination of the electrons and holes.
- the conductive member 100 may be applied to a light control device, as in the modified example 2 shown in FIG. 6.
- the functional layer 10a is replaced with a functional layer 10c.
- the functional layer 10c is composed of an electrochromic layer 21, an electrolyte layer 22, and a counter electrode material layer 23.
- the electrochromic layer 21, the electrolyte layer 22, and the counter electrode material layer 23 are laminated in this order on the flat surface 2a (the upper surface of the resin layer 4) of the substrate 2.
- the functional layer 10c is configured to have a thickness of 3.0 ⁇ m or less.
- the functional layer 10c has a thickness of 1.0 ⁇ m or less.
- the second electrode 14 is laminated on the upper side of the counter electrode material layer 23.
- the second electrode 14 in the second modification is made of a transparent material. Examples of materials for the second electrode 14 in the second modification include metal oxide, transparent conductive polymer, transparent conductive ink, and conductive metal.
- the metal oxide examples include indium tin oxide (ITO) and indium zinc oxide (IZO).
- the metal oxide may be zinc oxide, indium oxide, antimony-doped tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, potassium-doped zinc oxide, silicon-doped zinc oxide, or metal oxides such as zinc oxide-tin oxide, indium oxide-tin oxide, and zinc oxide-indium oxide-magnesium oxide, or a composite material of two or more of these metal oxides.
- the transparent conductive polymer may be, for example, PEDOT/PSS (poly-3,4-ethylenedioxythiophene/polysulfonic acid).
- the transparent conductive ink may be, for example, one that contains carbon nanotubes or silver nanofibers in a binder.
- the conductive metal may be, for example, copper, silver, gold, or an alloy containing at least one of these metals.
- the electrochromic layer 21 has a function of being colored by an oxidation reaction induced by holes (reference symbols h1 to h4 in FIG. 6) supplied from the first electrode 6 and electrons (reference symbols e1 to e3 in FIG. 6) supplied from the second electrode 14.
- the counter electrode layer 23 has a function of undergoing a reduction reaction in response to the oxidation reaction of the electrochromic layer 21 in order to stabilize the device.
- the electrolyte layer 22 has a function of blocking the electrons supplied from the second electrode 14 from escaping toward the second electrode 14 side (i.e., the counter electrode side of the first electrode 6).
- the conductive wires 7 may be formed so that their surfaces are recessed downward (toward the bottom side of the recess 5) below the flat surface 2a of the substrate 2.
- the distance between the flat surface 2a of the substrate 2 and the deepest part of the surface of each conductive wire 7 is preferably set to be greater than or equal to -1.0 ⁇ m and less than or equal to 1.0 ⁇ m. More preferably, the dimension d is greater than or equal to -0.1 ⁇ m and less than or equal to 0.0 ⁇ m.
- the flat surface 2a of the substrate 2 and the surface of each conductive wire 7 can be considered to be substantially flush with each other, as in the above embodiment. Therefore, it is possible to prevent the original function of a device to which the conductive member 100 of the third modified example is applied from being impaired.
- one cell formed by two conductive lines 7 extending in the X direction and adjacent to each other and two conductive lines 7 extending in the Y direction and adjacent to each other is formed in a square shape, but this is not limited to the above.
- a plurality of conductive lines 7 may extend in a diagonal direction with respect to both the X direction and the Y direction, and one cell formed by four conductive lines 7 may be formed in a diamond shape.
- the second electrode 14 is formed of a single metal layer, but the present invention is not limited to this embodiment.
- a conductive substrate 31 including a second electrode 36 may be provided as in Modification 5 shown in Fig. 9. That is, the conductive member 100 shown in Modification 5 includes a conductive substrate 1 including a first electrode 6 and a conductive substrate 31 including a second electrode 36.
- the conductive substrate 31 includes a substrate 32 and a second electrode 36.
- the substrate 32 includes a film base material 33 and a resin layer 34.
- the substrate 32 has a flat surface 32a.
- the flat surface 32a corresponds to the lower surface of the resin layer 34.
- the resin layer 34 has a plurality of recesses 35.
- the film substrate 33, the resin layer 34, and each of the recesses 35 have substantially the same structure as the film substrate 3, the resin layer 4, and each of the recesses 5 described in the above embodiment. Therefore, detailed descriptions of the film substrate 33, the resin layer 34, and each of the recesses 35 will be omitted.
- the second electrode 36 is made of a conductor pattern made up of a plurality of conductive wires 37.
- the plurality of conductive wires 37 are arranged on the side of the substrate 32 where the flat surface 32a is located.
- Each conductive wire 37 is made of a conductive metal embedded in each recess 35 of the resin layer 34.
- the conductive metal that makes up the conductive wires 37 is made of the same material as the conductive metal that makes up the conductive wires 7 described in the above embodiment.
- the surface of each conductive wire 37 is configured to be approximately flush with the flat surface 32a when exposed from the flat surface 32a of the substrate 32.
- the conductive wires 37 may be formed so that their surfaces are recessed upward (towards the bottom of the recess 35) from the flat surface 32a.
- the distance between the flat surface 32a and the deepest part of the surface of each conductive wire 37 is -1.0 ⁇ m or more and 1.0 ⁇ m or less. More preferably, the distance is -0.1 ⁇ m or more and 0.0 ⁇ m or less.
- the conductive substrate 31 having the same structure as the conductive substrate 1 of the above embodiment is provided on the upper side of the functional layer 10a, and therefore the same effect as the conductive substrate 1 of the above embodiment can be achieved. Therefore, it is possible to prevent the original function of the device to which the conductive member 100 of the fifth modification is applied from being impaired.
- the conductive substrate 1 may be disposed on the upper side of the functional layer 10a (on the upper surface side of the electron transport layer 13a) while the conductive substrate 31 may be disposed on the lower side of the functional layer 10a (on the lower surface side of the hole transport layer 11a).
- the conductive substrate 1 having the first electrode 6 is disposed below the functional layer 10a, while the second electrode 14 is disposed above the functional layer 10a, but the present invention is not limited to this embodiment. That is, although not shown, the conductive substrate 1 having the first electrode 6 may be disposed above the functional layer 10a (above the electron transport layer 13a in the above embodiment), while the second electrode 14 may be disposed below the functional layer 10a (above the hole transport layer 11a in the above embodiment).
- This disclosure can be used industrially as a conductive substrate that can be applied to devices such as solar cells, OLEDs, and light control devices.
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Abstract
Description
本開示は導電基板に関するものである。 This disclosure relates to conductive substrates.
従来から、太陽電池、OLED、調光デバイスなどに適用される導電基板が知られている。例えば、太陽電池に適用される導電基板として、特許文献1に示されるものが知られている。 Conductive substrates that are applied to solar cells, OLEDs, light control devices, etc. are known. For example, a conductive substrate that is applied to solar cells is shown in Patent Document 1.
特許文献1には、透明樹脂フィルムを用いた有機薄膜太陽電池が開示されている。例えば、特許文献1の図7に示された有機薄膜太陽電池は、透明樹脂フィルムからなる透明基板と、透明基板上に形成されたメッシュ電極と、透明基板上に形成された透明電極と、透明電極上に形成された正孔取出し層と、正孔取出し層上に形成された光電変換層と、光電変換層上に形成された電子取出し層と、電子取出し層上に形成された対向電極と、を備えている。 Patent Document 1 discloses an organic thin-film solar cell that uses a transparent resin film. For example, the organic thin-film solar cell shown in FIG. 7 of Patent Document 1 includes a transparent substrate made of a transparent resin film, a mesh electrode formed on the transparent substrate, a transparent electrode formed on the transparent substrate, a hole extraction layer formed on the transparent electrode, a photoelectric conversion layer formed on the hole extraction layer, an electron extraction layer formed on the photoelectric conversion layer, and a counter electrode formed on the electron extraction layer.
上記の有機薄膜太陽電池において、メッシュ電極は、透明基板の上面から対向電極が位置する側に向かって突出するように構成されている。このような構成において、透明電極、正孔取出し層、光電変換層、および、電子取出し層の各々が薄く形成された場合には、各メッシュ電極の上記角部を境目にして、各層が上記凸形状の長手方向に分断される場合がある。この場合には、各層が有する機能が損なわれてしまう。さらに、各層が分断されてしまうと、各メッシュ電極の周囲に位置する透明電極から対向電極までの全ての層が透明基板側にずれ落ちた状態となり、電子取出し層上に形成された対向電極と、各メッシュ電極の上記角部との距離が近づく場合もある。この場合には、対向電極と各メッシュ電極の上記角部とが接触してしまい、電気的なショートが発生するおそれがある。 In the organic thin-film solar cell, the mesh electrode is configured to protrude from the top surface of the transparent substrate toward the side where the counter electrode is located. In this configuration, if the transparent electrode, hole extraction layer, photoelectric conversion layer, and electron extraction layer are each formed thin, each layer may be divided in the longitudinal direction of the convex shape at the corners of each mesh electrode. In this case, the function of each layer is impaired. Furthermore, if each layer is divided, all layers from the transparent electrode located around each mesh electrode to the counter electrode may slip down toward the transparent substrate, and the counter electrode formed on the electron extraction layer may become closer to the corners of each mesh electrode. In this case, the counter electrode may come into contact with the corners of each mesh electrode, which may cause an electrical short circuit.
このように、特許文献1に示された構成では、導電基板を適用したデバイスの本来的な機能が損なわれてしまう場合があった。 As such, the configuration shown in Patent Document 1 could result in the original functionality of the device to which the conductive substrate is applied being impaired.
本開示は斯かる点に鑑みてなされたものであり、その目的は、導電基板を適用したデバイスの本来的な機能が損なわれないようにすることにある。 This disclosure has been made in light of these points, and its purpose is to prevent the inherent functionality of devices to which a conductive substrate is applied from being impaired.
上記の目的を達成するために、本開示の一実施形態は機能層および第二電極を取り付けるために用いられる導電基板であって、導電基板は、平坦面を有する基板と、基板に形成された第一電極と、を備えている。第一電極は、各々が基板の平坦面が位置する側に埋設された導電性金属からなる複数の導電線により構成されている。基板の平坦面は、機能層および第二電極を配置可能となるように構成されている。そして、複数の導電線の各々の表面は、平坦面と略面一になるように構成されている。 In order to achieve the above object, one embodiment of the present disclosure is a conductive substrate used to attach a functional layer and a second electrode, the conductive substrate comprising a substrate having a flat surface and a first electrode formed on the substrate. The first electrode is composed of a plurality of conductive wires, each made of a conductive metal, embedded on the side of the substrate where the flat surface is located. The flat surface of the substrate is configured to allow the functional layer and the second electrode to be disposed thereon. The surface of each of the plurality of conductive wires is configured to be substantially flush with the flat surface.
本開示によると、導電基板を適用したデバイスの本来的な機能が損なわれないようにすることができる。 According to this disclosure, it is possible to prevent the inherent functionality of a device to which a conductive substrate is applied from being impaired.
以下、本開示の実施形態を図面に基づいて詳細に説明する。以下の実施形態の説明は、本質的に例示に過ぎず、本開示、その適用物或いはその用途を制限することを意図するものではない。 Below, embodiments of the present disclosure will be described in detail with reference to the drawings. The following description of the embodiments is merely exemplary in nature and is not intended to limit the present disclosure, its applications, or its uses.
本開示の実施形態は、機能層10aおよび第二電極14を取り付けるために用いられる導電基板1(図2参照)である。図2に示すように、導電基板1は、基板2および第一電極6を備えている。導電基板1は、機能層10aの下側(後述する正孔輸送層11aの下面側)に配置されている。 The embodiment of the present disclosure is a conductive substrate 1 (see FIG. 2) used to attach a functional layer 10a and a second electrode 14. As shown in FIG. 2, the conductive substrate 1 includes a substrate 2 and a first electrode 6. The conductive substrate 1 is disposed below the functional layer 10a (below, on the bottom side of a hole transport layer 11a).
図1は、導電部材100の一部を概略的に示している。図2に示すように、導電部材100は、導電基板1と、機能層10aと、第二電極14と、を備えている。導電部材100は、太陽電池、OLED(有機発光ダイオード)、調光デバイスなどに適用することが可能である。この実施形態では、導電部材100を太陽電池に適用した形態を例示している。 FIG. 1 shows a schematic diagram of a portion of the conductive member 100. As shown in FIG. 2, the conductive member 100 includes a conductive substrate 1, a functional layer 10a, and a second electrode 14. The conductive member 100 can be applied to solar cells, OLEDs (organic light-emitting diodes), dimming devices, and the like. This embodiment illustrates an example in which the conductive member 100 is applied to a solar cell.
ここで、図1では、図1における紙面の左側から右側に向かう方向を「X方向」と定める一方、図1における紙面の下側から上側に向かう方向を「Y方向」として定めるものとする。 Here, in FIG. 1, the direction from the left side to the right side of the paper in FIG. 1 is defined as the "X direction," while the direction from the bottom to the top of the paper in FIG. 1 is defined as the "Y direction."
また、以下の説明では、図2に示した導電部材100の厚み方向において、後述する第二電極14が位置する側を導電部材100の「上側」とし、その反対側(後述するフィルム基材3が位置する側)を導電部材100の「下側」として、導電部材100を構成する各要素の位置関係を定めるものとする。なお、このような位置関係は、導電部材100が組み込まれた機器における実際の方向とは無関係である。 In the following description, the side on which the second electrode 14, described later, is located in the thickness direction of the conductive member 100 shown in FIG. 2 is defined as the "upper side" of the conductive member 100, and the opposite side (the side on which the film substrate 3, described later, is located) is defined as the "lower side" of the conductive member 100, and the positional relationship of each element constituting the conductive member 100 is defined. Note that this positional relationship is unrelated to the actual direction in the device in which the conductive member 100 is incorporated.
(基板)
図2に示すように、基板2は、透明性および光透過性を有する。基板2は、平坦面2aを有する。この実施形態において、平坦面2aは、後述する樹脂層4の上面に相当する。
(substrate)
2, the substrate 2 has transparency and light transmittance. The substrate 2 has a flat surface 2a. In this embodiment, the flat surface 2a corresponds to the upper surface of a resin layer 4, which will be described later.
基板2は、フィルム基材3を含む。フィルム基材3は、可撓性、透明性、および光透過性を有する樹脂材料からなる。フィルム基材3の厚みは、例えば20μm~200μmである。 The substrate 2 includes a film substrate 3. The film substrate 3 is made of a resin material that is flexible, transparent, and light-transmitting. The thickness of the film substrate 3 is, for example, 20 μm to 200 μm.
上記樹脂材料としては、例えば、PET(ポリエチレンテレフタレート)、ポリカーボネート、COP(シクロオレフィンポリマー)、COC(シクロオレフィンコポリマー)のような樹脂材料が挙げられる。 Examples of the resin material include PET (polyethylene terephthalate), polycarbonate, COP (cycloolefin polymer), and COC (cycloolefin copolymer).
基板2は、樹脂層4を含む。樹脂層4は、絶縁性および光透過性を有する樹脂材料により構成されている。樹脂層4の厚みは、例えば1μm~10μmである。 The substrate 2 includes a resin layer 4. The resin layer 4 is made of a resin material that is insulating and optically transparent. The thickness of the resin layer 4 is, for example, 1 μm to 10 μm.
樹脂層4は、フィルム基材3の上側に積層配置されている。樹脂層4の上面(すなわち平坦面2a)は、後述の凹部5を除いて、略平坦状に形成されている。 The resin layer 4 is laminated on the upper side of the film substrate 3. The upper surface of the resin layer 4 (i.e., the flat surface 2a) is formed to be substantially flat, except for the recessed portion 5 described below.
図3および図4に示すように、樹脂層4には、樹脂層4の上面から下方に向かって凹陥した有底状の凹部5が複数設けられている。複数の凹部5は、樹脂層4の上面(平坦面2a)において後述する所定パターンを形成するように線状に延びている。なお、複数の凹部5は、例えば、熱エンボス法、フォトリソグラフィによるエッチング工法、レーザー加工などにより樹脂層4の上面に形成される。 As shown in Figures 3 and 4, the resin layer 4 has a plurality of bottomed recesses 5 that are recessed downward from the upper surface of the resin layer 4. The recesses 5 extend linearly on the upper surface (flat surface 2a) of the resin layer 4 to form a predetermined pattern, which will be described later. The recesses 5 are formed on the upper surface of the resin layer 4 by, for example, a thermal embossing method, a photolithographic etching method, laser processing, or the like.
(第一電極)
図1および図2に示すように、第一電極6は、基板2の平坦面2a側(樹脂層4の上面側)に形成された導体パターンからなる。導体パターンは、複数の導電線7により構成されている。複数の導電線7は、基板2の平坦面2a側に配置されている。
(First Electrode)
1 and 2 , the first electrode 6 is made of a conductor pattern formed on the flat surface 2a side (the upper surface side of the resin layer 4) of the substrate 2. The conductor pattern is made up of a plurality of conductive wires 7. The plurality of conductive wires 7 are arranged on the flat surface 2a side of the substrate 2.
上記導体パターンは、基板2の平坦面2aにおいて所定パターンとなるように配置されている。図1では、上記所定パターンの一例として、複数の導電線7をメッシュ状に配置したメッシュパターンを示している。 The conductor pattern is arranged in a predetermined pattern on the flat surface 2a of the substrate 2. Figure 1 shows a mesh pattern in which multiple conductive wires 7 are arranged in a mesh shape as an example of the predetermined pattern.
上記メッシュパターンは、X方向に延びる複数の導電線7と、Y方向に延びる複数の導電線7とが互いに交差するように構成されている。X方向に延びる複数の導電線7は、互いに等間隔に配置されている。Y方向に延びる複数の導電線7は、互いに等間隔に配置されている。この実施形態では、X方向に延びかつ互いに隣り合う2つの導電線7,7と、Y方向に延びかつ互いに隣り合う2つの導電線7,7とにより構成される一つのセルが、正方形状に形成されている。 The mesh pattern is configured such that a plurality of conductive lines 7 extending in the X direction and a plurality of conductive lines 7 extending in the Y direction intersect with each other. The plurality of conductive lines 7 extending in the X direction are arranged at equal intervals from each other. The plurality of conductive lines 7 extending in the Y direction are arranged at equal intervals from each other. In this embodiment, one cell constituted by two conductive lines 7, 7 extending in the X direction and adjacent to each other, and two conductive lines 7, 7 extending in the Y direction and adjacent to each other, is formed in a square shape.
各導電線7は、細線化されている。各導電線7の線幅は、例えば10μm以下となるように構成されている。 Each conductive wire 7 is thinned. The width of each conductive wire 7 is configured to be, for example, 10 μm or less.
図2~図4に示すように、各導電線7は、基板2の各凹部5に埋設された導電性金属により構成されている。この導電性金属としては、例えば、銅(Cu)、銀(Ag)、金(Au)、アルミニウム(Al)、ニッケル(Ni)、またはこれらの金属の少なくとも1つを含む合金が適している。 As shown in Figures 2 to 4, each conductive wire 7 is made of a conductive metal embedded in each recess 5 of the substrate 2. Suitable conductive metals include, for example, copper (Cu), silver (Ag), gold (Au), aluminum (Al), nickel (Ni), or an alloy containing at least one of these metals.
本開示の実施形態に係る特徴的構成として、各導電線7の表面は、基板2の平坦面2aから露出した状態で、基板2の平坦面2aと略面一になるように構成されている。図4に示すように、この実施形態では、基板2の平坦面2aと各導電線7の表面とが完全に面一となる状態を例示している。なお、図4では、図示の便宜上、正孔輸送層11aの図示を省略している。 As a characteristic configuration of the embodiment of the present disclosure, the surface of each conductive wire 7 is configured to be substantially flush with the flat surface 2a of the substrate 2 when exposed from the flat surface 2a of the substrate 2. As shown in FIG. 4, this embodiment illustrates a state in which the flat surface 2a of the substrate 2 and the surface of each conductive wire 7 are completely flush with each other. Note that, for convenience of illustration, the hole transport layer 11a is omitted in FIG. 4.
(機能層)
図2および図3に示すように、機能層10aは、3つの層により構成されている。具体的に、機能層10aは、正孔輸送層11a、電荷発生層12a、および、電子輸送層13aにより構成されている。正孔輸送層11a、電荷発生層12a、および、電子輸送層13aは、この順番で基板2の平坦面2a(樹脂層4の上面)に積層配置されている。機能層10aは、厚みが3.0μm以下となるように構成されている。好ましくは、機能層10aの厚みは1.0μm以下である。
(Functional layer)
As shown in Figures 2 and 3, the functional layer 10a is composed of three layers. Specifically, the functional layer 10a is composed of a hole transport layer 11a, a charge generation layer 12a, and an electron transport layer 13a. The hole transport layer 11a, the charge generation layer 12a, and the electron transport layer 13a are laminated in this order on the flat surface 2a (the upper surface of the resin layer 4) of the substrate 2. The functional layer 10a is configured to have a thickness of 3.0 μm or less. Preferably, the thickness of the functional layer 10a is 1.0 μm or less.
電荷発生層12aは、電子供与性の機能を有する。具体的に、電荷発生層12aは、電荷発生層12a内で形成されるpn接合を利用して電荷分離が生じるように構成されている。 The charge generation layer 12a has an electron donating function. Specifically, the charge generation layer 12a is configured to generate charge separation by utilizing a pn junction formed within the charge generation layer 12a.
電荷発生層12aは、電子供与性材料を含む。電子供与性材料としては、電子供与体としての機能を有するものであれば特に限定されない。好ましくは、電子供与性材料は、湿式塗工法により成膜可能な材料である。特に、電子供与性材料としては、電子供与性の導電性高分子材料が適している。 The charge generating layer 12a contains an electron donating material. There are no particular limitations on the electron donating material as long as it functions as an electron donor. Preferably, the electron donating material is a material that can be formed into a film by a wet coating method. In particular, an electron donating conductive polymer material is suitable as the electron donating material.
電子供与性の導電性高分子材料としては、例えば、ポリフェニレン、ポリフェニレンビニレン、ポリシラン、ポリチオフェン、ポリカルバゾール、ポリビニルカルバゾール、ポルフィリン、ポリアセチレン、ポリピロール、ポリアニリン、ポリフルオレン、ポリビニルピレン、ポリビニルアントラセン、およびこれらの誘導体、ならびにこれらの共重合体、あるいは、フタロシアニン含有ポリマー、カルバゾール含有ポリマー、有機金属ポリマー等が挙げられる。 Examples of electron-donating conductive polymer materials include polyphenylene, polyphenylenevinylene, polysilane, polythiophene, polycarbazole, polyvinylcarbazole, porphyrin, polyacetylene, polypyrrole, polyaniline, polyfluorene, polyvinylpyrene, polyvinylanthracene, and derivatives thereof, as well as copolymers thereof, or phthalocyanine-containing polymers, carbazole-containing polymers, organometallic polymers, etc.
より好ましくは、電子供与性の導電性高分子材料は、チオフェン-フルオレン共重合体、ポリアルキルチオフェン、フェニレンエチニレン-フェニレンビニレン共重合体、フェニレンエチニレン-チオフェン共重合体、フェニレンエチニレン-フルオレン共重合体、フルオレン-フェニレンビニレン共重合体、チオフェン-フェニレンビニレン共重合体等である。 More preferably, the electron-donating conductive polymer material is a thiophene-fluorene copolymer, a polyalkylthiophene, a phenyleneethynylene-phenylenevinylene copolymer, a phenyleneethynylene-thiophene copolymer, a phenyleneethynylene-fluorene copolymer, a fluorene-phenylenevinylene copolymer, a thiophene-phenylenevinylene copolymer, or the like.
正孔輸送層11aは、電荷発生層12aにより発生した正孔を各導電線7に向かって輸送する機能を有する。正孔輸送層11aにより、電荷発生層12aにより発生した正孔の輸送効率が高められる。その結果、太陽電池として適用した導電部材100における光電変換の効率が向上する。 The hole transport layer 11a has the function of transporting the holes generated by the charge generation layer 12a toward each conductive line 7. The hole transport layer 11a increases the transport efficiency of the holes generated by the charge generation layer 12a. As a result, the efficiency of photoelectric conversion in the conductive member 100 applied as a solar cell is improved.
正孔輸送層11aの材料としては、例えば、ドープされたポリアニリン、ポリフェニレンビニレン、ポリチオフェン、ポリピロール、ポリパラフェニレン、ポリアセチレン、トリフェニルジアミン(TPD)等の導電性有機化合物、またはテトラチオフルバレン、テトラメチルフェニレンジアミン等の電子供与性化合物と、テトラシアノキノジメタン、テトラシアノエチレン等の電子受容性化合物とからなる電荷移動錯体を形成する有機材料等が適している。 Suitable materials for the hole transport layer 11a include, for example, conductive organic compounds such as doped polyaniline, polyphenylene vinylene, polythiophene, polypyrrole, polyparaphenylene, polyacetylene, and triphenyldiamine (TPD), or organic materials that form charge transfer complexes consisting of electron donor compounds such as tetrathiofulvalene and tetramethylphenylenediamine and electron acceptor compounds such as tetracyanoquinodimethane and tetracyanoethylene.
また、正孔輸送層11aとしては、Au、In、Ag、Pd等の金属材料からなる薄膜を用いてもよい。この薄膜は、Au、In、Ag、Pd等の金属材料を単独で形成してもよく、或いはこれらの金属材料と上述の有機材料とを適宜組み合わせたものであってもよい。 The hole transport layer 11a may be a thin film made of a metal material such as Au, In, Ag, or Pd. This thin film may be made of a metal material such as Au, In, Ag, or Pd alone, or may be a combination of these metal materials and the organic materials described above.
電子輸送層13aは、電荷発生層12aにより発生した電子を後述する第二電極14に向かって輸送する機能を有する。電子輸送層13aにより、電荷発生層12aにより発生した電子の輸送効率が高められる。その結果、太陽電池として適用した導電部材100における光電変換の効率が向上する。 The electron transport layer 13a has the function of transporting electrons generated by the charge generation layer 12a toward the second electrode 14 described below. The electron transport layer 13a increases the transport efficiency of the electrons generated by the charge generation layer 12a. As a result, the efficiency of photoelectric conversion in the conductive member 100 applied as a solar cell is improved.
電子輸送層13aの材料としては、例えば、ドープされたポリアニリン、ポリフェニレンビニレン、ポリチオフェン、ポリピロール、ポリパラフェニレン、ポリアセチレン、トリフェニルジアミン(TPD)等の導電性有機化合物、またはテトラチオフルバレン、テトラメチルフェニレンジアミン等の電子供与性化合物と、テトラシアノキノジメタン、テトラシアノエチレン等の電子受容性化合物とからなる電荷移動錯体を形成する有機材料等が挙げられる。 Examples of materials for the electron transport layer 13a include conductive organic compounds such as doped polyaniline, polyphenylene vinylene, polythiophene, polypyrrole, polyparaphenylene, polyacetylene, and triphenyldiamine (TPD), or organic materials that form charge transfer complexes consisting of electron donor compounds such as tetrathiofulvalene and tetramethylphenylenediamine and electron acceptor compounds such as tetracyanoquinodimethane and tetracyanoethylene.
また、電子輸送層13aの材料として、アルカリ金属あるいはアルカリ土類金属との金属ドープ層を適用することも可能である。金属ドープ層としては、バソキュプロイン(BCP)または、バソフェナントロン(Bphen)と、Li、Cs、Ba、Srなどが挙げられる。 Also, a metal-doped layer with an alkali metal or an alkaline earth metal can be used as the material for the electron transport layer 13a. Examples of the metal-doped layer include bathocuproine (BCP) or bathophenanthrone (Bphen) and Li, Cs, Ba, Sr, etc.
(第二電極)
図2および図3に示すように、第二電極14は、機能層10aの上面(電子輸送層13aの上面)に積層配置されている。すなわち、第二電極14は、基板2の厚み方向において、機能層10aを挟んだ状態で第一電極6と対向している。
(Second electrode)
2 and 3, the second electrode 14 is disposed on the upper surface of the functional layer 10a (the upper surface of the electron transport layer 13a) by lamination. That is, the second electrode 14 faces the first electrode 6 in the thickness direction of the substrate 2 with the functional layer 10a sandwiched therebetween.
この実施形態において、第二電極14は、導電性を有する金属材料からなる。この金属材料としては、Li、In、Al、Ca、Mg、Sm、Tb、Yb、Zr、LiF、Au、Ag等が含まれていてもよい。また、第二電極14は、酸化インジウム錫(ITO:Indium Tin Oxide)、酸化インジウム亜鉛(IZO:Indium Zinc Oxide)などの金属酸化物、またはPEDOT/PSSなどの透明導電性ポリマーにより構成されていてもよい。 In this embodiment, the second electrode 14 is made of a conductive metal material. This metal material may include Li, In, Al, Ca, Mg, Sm, Tb, Yb, Zr, LiF, Au, Ag, etc. The second electrode 14 may also be made of a metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a transparent conductive polymer such as PEDOT/PSS.
この実施形態において、第二電極14は、単層により構成された金属層を例示している(図2および図3参照)。第二電極14は、例えば、真空蒸着法、メタルマスクによるパターン蒸着法により形成される。なお、第二電極14、各々が互いに異なる金属材料からなる複数の層を積層配置したものであってもよい。また、第二電極14は、電荷発生層12aの上面全体に形成したベタ状の電極であってもよく、金属細線を所定のパターンに形成した構成であってもよい。 In this embodiment, the second electrode 14 is exemplified as a metal layer composed of a single layer (see Figures 2 and 3). The second electrode 14 is formed, for example, by a vacuum deposition method or a pattern deposition method using a metal mask. The second electrode 14 may be a laminated arrangement of multiple layers each made of a different metal material. The second electrode 14 may also be a solid electrode formed on the entire top surface of the charge generating layer 12a, or may be configured with thin metal wires formed in a predetermined pattern.
(キャリアパス)
図3を参照しながら、導電部材100を太陽電池に適用した場合の、キャリアパスについて概略的に説明する。電荷発生層12aは、光エネルギーによりキャリア(電子および正孔)を生成する。電荷発生層12aにより生成された電子(図3に例示した符号e1~e4)は、電子輸送層13aを経由して第二電極14に向かって輸送される。電荷発生層12aにより生成された正孔(図3に例示した符号h1~h4)は、正孔輸送層11aを経由して第一電極6に輸送される。
(Career Path)
With reference to Fig. 3, a carrier path when the conductive member 100 is applied to a solar cell will be roughly described. The charge generation layer 12a generates carriers (electrons and holes) by light energy. The electrons (e1 to e4 shown in Fig. 3) generated by the charge generation layer 12a are transported toward the second electrode 14 via the electron transport layer 13a. The holes (h1 to h4 shown in Fig. 3) generated by the charge generation layer 12a are transported to the first electrode 6 via the hole transport layer 11a.
[実施形態の作用効果]
本開示の実施形態に係る導電基板1において、各導電線7の表面は、平坦面2aと略面一になるように構成されている。すなわち、各導電線7は、基板2の平坦面2aから突出しないように構成されている。かかる構成によれば、機能層10aが比較的薄く形成された場合であっても、各導電線7が凸形状でないことから、従来技術の構成と異なり、機能層10aの各々が基板2の厚み方向に分断されることがない。さらに、機能層10aが分断するおそれがないことから、各導電線7が第二電極14と接触することもなく、電気的なショートも発生しない。したがって、導電部材100を適用したデバイス(この実施形態では太陽電池)の本来的な機能が損なわれないようにすることができる。
[Effects of the embodiment]
In the conductive substrate 1 according to the embodiment of the present disclosure, the surface of each conductive line 7 is configured to be substantially flush with the flat surface 2a. That is, each conductive line 7 is configured not to protrude from the flat surface 2a of the substrate 2. According to this configuration, even if the functional layer 10a is formed relatively thin, each conductive line 7 is not convex, and therefore, unlike the configuration of the prior art, each functional layer 10a is not divided in the thickness direction of the substrate 2. Furthermore, since there is no risk of the functional layer 10a being divided, each conductive line 7 does not come into contact with the second electrode 14, and no electrical short circuit occurs. Therefore, it is possible to prevent the original function of the device to which the conductive member 100 is applied (a solar cell in this embodiment) from being impaired.
[実施形態の変形例1]
上記実施形態では、導電部材100を太陽電池に適用した形態を示したが、この形態に限られない。例えば、図5に示した変形例1のように、導電部材100をOLED(有機発光ダイオード)に適用してもよい。
[First Modification of the Embodiment]
In the above embodiment, the conductive member 100 is applied to a solar cell, but the present invention is not limited to this. For example, the conductive member 100 may be applied to an OLED (organic light-emitting diode) as in Modification 1 shown in FIG.
変形例1に係る導電部材100では、機能層10aが、機能層10bに置き換えられている。図5に示すように、機能層10bは、正孔輸送層11b、発光層12b、および、電子輸送層13bにより構成されている。正孔輸送層11b、発光層12b、および、電子輸送層13bは、この順番で基板2の平坦面2a(樹脂層4の上面)に積層配置されている。第二電極14は、電子輸送層13bの上側に積層配置されている。なお、機能層10bは、厚みが3.0μm以下となるように構成される。好ましくは、機能層10bの厚みは1.0μm以下である。 In the conductive member 100 according to the first modified example, the functional layer 10a is replaced with a functional layer 10b. As shown in FIG. 5, the functional layer 10b is composed of a hole transport layer 11b, a light emitting layer 12b, and an electron transport layer 13b. The hole transport layer 11b, the light emitting layer 12b, and the electron transport layer 13b are layered in this order on the flat surface 2a (the upper surface of the resin layer 4) of the substrate 2. The second electrode 14 is layered on the upper side of the electron transport layer 13b. The functional layer 10b is configured to have a thickness of 3.0 μm or less. Preferably, the thickness of the functional layer 10b is 1.0 μm or less.
変形例1において、電子輸送層13bは、第二電極14から供給された電子(図5に例示した符号e1~e3)を発光層12bに向かって輸送する機能を有する。正孔輸送層11bは、第一電極6から供給された正孔(図5に例示した符号h1~h4)を発光層12bに向かって輸送する機能を有する。発光層12bでは、電子輸送層13bから供給された電子と、正孔輸送層11bから供給された正孔とが再結合する。発光層12bは、電子と正孔とが再結合することで生じるエネルギーにより、発光層12bを構成する分子が励起されて発光する機能を有する。 In the first modification, the electron transport layer 13b has a function of transporting electrons (e1 to e3 shown in FIG. 5) supplied from the second electrode 14 toward the light-emitting layer 12b. The hole transport layer 11b has a function of transporting holes (h1 to h4 shown in FIG. 5) supplied from the first electrode 6 toward the light-emitting layer 12b. In the light-emitting layer 12b, the electrons supplied from the electron transport layer 13b and the holes supplied from the hole transport layer 11b recombine. The light-emitting layer 12b has a function of emitting light when the molecules constituting the light-emitting layer 12b are excited by the energy generated by the recombination of the electrons and holes.
この変形例であっても、上記実施形態と同様に、導電フィルム1を適用したデバイス(この変形例ではOLED)の本来的な機能が損なわれないようにすることができる。 Even in this modified example, as in the above embodiment, the original functions of the device to which the conductive film 1 is applied (OLED in this modified example) can be prevented from being impaired.
[実施形態の変形例2]
また、図6に示した変形例2のように、導電部材100を調光デバイスに適用してもよい。変形例2に係る導電部材100では、機能層10aが、機能層10cに置き換えられている。図6に示すように、変形例2において、機能層10cは、エレクトロクロミック層21、電解質層22、および、対極物質層23により構成されている。エレクトロクロミック層21、電解質層22、および、対極物質層23は、この順番で基板2の平坦面2a(樹脂層4の上面)に積層配置されている。なお、機能層10cは、厚みが3.0μm以下となるように構成される。好ましくは、機能層10cの厚みは1.0μm以下である。
[Modification 2 of the embodiment]
Also, the conductive member 100 may be applied to a light control device, as in the modified example 2 shown in FIG. 6. In the conductive member 100 according to the modified example 2, the functional layer 10a is replaced with a functional layer 10c. As shown in FIG. 6, in the modified example 2, the functional layer 10c is composed of an electrochromic layer 21, an electrolyte layer 22, and a counter electrode material layer 23. The electrochromic layer 21, the electrolyte layer 22, and the counter electrode material layer 23 are laminated in this order on the flat surface 2a (the upper surface of the resin layer 4) of the substrate 2. The functional layer 10c is configured to have a thickness of 3.0 μm or less. Preferably, the functional layer 10c has a thickness of 1.0 μm or less.
変形例2において、第二電極14は、対極物質層23の上側に積層配置されている。変形例2の第二電極14は、透明性を有する材料により構成されている。変形例2の第二電極14の材料としては、例えば、金属酸化物、透明導電性ポリマー、透明導電インキ、または、導電性金属が挙げられる。 In the second modification, the second electrode 14 is laminated on the upper side of the counter electrode material layer 23. The second electrode 14 in the second modification is made of a transparent material. Examples of materials for the second electrode 14 in the second modification include metal oxide, transparent conductive polymer, transparent conductive ink, and conductive metal.
上記金属酸化物としては、例えば、酸化インジウム錫(ITO:Indium Tin Oxide)、酸化インジウム亜鉛(IZO:Indium Zinc Oxide)が挙げられる。また、上記金属酸化物としては、酸化亜鉛、酸化インジウム、アンチモン添加酸化錫、フッ素添加酸化錫、アルミニウム添加酸化亜鉛、カリウム添加酸化亜鉛、シリコン添加酸化亜鉛や、酸化亜鉛-酸化錫系、酸化インジウム-酸化錫系、酸化亜鉛-酸化インジウム-酸化マグネシウム系などの金属酸化物や、これらの金属酸化物が2種以上複合された材料であってもよい。 Examples of the metal oxide include indium tin oxide (ITO) and indium zinc oxide (IZO). In addition, the metal oxide may be zinc oxide, indium oxide, antimony-doped tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, potassium-doped zinc oxide, silicon-doped zinc oxide, or metal oxides such as zinc oxide-tin oxide, indium oxide-tin oxide, and zinc oxide-indium oxide-magnesium oxide, or a composite material of two or more of these metal oxides.
上記透明導電性ポリマーとしては、例えば、PEDOT/PSS(poly-3,4-エチレンジオキシチオフェン/ポリスルフォン酸)が挙げられる。上記透明導電インキとしては、例えば、カーボンナノチューブまたは銀ナノファイバーをバインダー中に含むものが挙げられる。上記導電性金属としては、例えば、銅、銀、金、またはこれらの金属の少なくとも1つを含む合金が適している。 The transparent conductive polymer may be, for example, PEDOT/PSS (poly-3,4-ethylenedioxythiophene/polysulfonic acid). The transparent conductive ink may be, for example, one that contains carbon nanotubes or silver nanofibers in a binder. The conductive metal may be, for example, copper, silver, gold, or an alloy containing at least one of these metals.
エレクトロクロミック層21は、第一電極6から供給された正孔(図6に例示した符号h1~h4)および第二電極14から供給された電子(図6に例示した符号e1~e3)により酸化反応が誘起されて着色する機能を有する。対極物質層23は、デバイスを安定化させるために、エレクトロクロミック層21の酸化反応に対して還元反応する機能を有する。電解質層22は、第二電極14から供給された電子が第二電極14側(すなわち、第一電極6の対極側)に向かって抜けないように遮断する機能を有する。 The electrochromic layer 21 has a function of being colored by an oxidation reaction induced by holes (reference symbols h1 to h4 in FIG. 6) supplied from the first electrode 6 and electrons (reference symbols e1 to e3 in FIG. 6) supplied from the second electrode 14. The counter electrode layer 23 has a function of undergoing a reduction reaction in response to the oxidation reaction of the electrochromic layer 21 in order to stabilize the device. The electrolyte layer 22 has a function of blocking the electrons supplied from the second electrode 14 from escaping toward the second electrode 14 side (i.e., the counter electrode side of the first electrode 6).
この変形例であっても、上記実施形態と同様に、導電フィルム1を適用したデバイス(この変形例ではOLED)の本来的な機能が損なわれないようにすることができる。 Even in this modified example, as in the above embodiment, the original functions of the device to which the conductive film 1 is applied (OLED in this modified example) can be prevented from being impaired.
[実施形態の変形例3]
上記実施形態では、各導電線7の表面と基板2の平坦面2a(樹脂層4の上面)とが完全に面一となる形態(図4参照)を例示したが、この形態に限られない。すなわち、図7に示した変形例3のように、基板2の平坦面2aと各導電線7の表面とが完全に面一となっていなくてもよい。なお、図7では、図示の便宜上、正孔輸送層11aの図示を省略している。
[Modification 3 of the embodiment]
In the above embodiment, the configuration in which the surface of each conductive wire 7 and the flat surface 2a of the substrate 2 (the upper surface of the resin layer 4) are completely flush with each other (see FIG. 4) has been illustrated, but the present invention is not limited to this configuration. That is, as in Modification 3 shown in FIG. 7, the flat surface 2a of the substrate 2 and the surface of each conductive wire 7 do not have to be completely flush with each other. Note that, for convenience of illustration, the hole transport layer 11a is omitted in FIG. 7.
図7に示すように、導電線7は、その表面が基板2の平坦面2aよりも下方(凹部5の底側)に向かって窪むように形成されていてもよい。具体的に、変形例3に係る導電部材100において、基板2の平坦面2aと、各導電線7における表面の最深部との距離(図7に示した寸法dに相当)は、-1.0μm以上1.0μm以下に設定されるのが好ましい。より好ましくは、寸法dは-0.1μm以上0.0μm以下である。 As shown in FIG. 7, the conductive wires 7 may be formed so that their surfaces are recessed downward (toward the bottom side of the recess 5) below the flat surface 2a of the substrate 2. Specifically, in the conductive member 100 according to variant example 3, the distance between the flat surface 2a of the substrate 2 and the deepest part of the surface of each conductive wire 7 (corresponding to the dimension d shown in FIG. 7) is preferably set to be greater than or equal to -1.0 μm and less than or equal to 1.0 μm. More preferably, the dimension d is greater than or equal to -0.1 μm and less than or equal to 0.0 μm.
このように寸法dを設定すれば、上記実施形態と同様に、基板2の平坦面2aと各導電線7の表面とが略面一であるとみなすことができる。したがって、変形例3に係る導電部材100を適用したデバイスの本来的な機能が損なわれないようにすることができる。 By setting the dimension d in this manner, the flat surface 2a of the substrate 2 and the surface of each conductive wire 7 can be considered to be substantially flush with each other, as in the above embodiment. Therefore, it is possible to prevent the original function of a device to which the conductive member 100 of the third modified example is applied from being impaired.
[実施形態の変形例4]
上記実施形態では、第一電極6において、X方向に延びかつ互いに隣り合う2つの導電線7と、Y方向に延びかつ互いに隣り合う2つの導電線7とにより構成される一つのセルが、正方形状に形成された形態を示したが、この形態に限られない。例えば、図8に示した変形例4のように、複数の導電線7がX方向およびY方向の双方に対して斜め方向に延びていて、4つの導電線7で構成される一つのセルがひし形状に形成されていてもよい。
[Fourth Modification of the Embodiment]
In the above embodiment, in the first electrode 6, one cell formed by two conductive lines 7 extending in the X direction and adjacent to each other and two conductive lines 7 extending in the Y direction and adjacent to each other is formed in a square shape, but this is not limited to the above. For example, as in Modification 4 shown in Fig. 8, a plurality of conductive lines 7 may extend in a diagonal direction with respect to both the X direction and the Y direction, and one cell formed by four conductive lines 7 may be formed in a diamond shape.
[実施形態の変形例5]
上記実施形態では、第二電極14が単層の金属層からなる形態を例示したが、この形態に限られない。例えば、上記実施形態で示した第二電極14(図2および図3参照)に代えて、図9に示した変形例5のように、第二電極36を備えた導電基板31を設けてもよい。すなわち、変形例5に示した導電部材100は、第一電極6が設けられた導電基板1と、第二電極36が設けられた導電基板31と、を備えている。
[Fifth Modification of the Embodiment]
In the above embodiment, the second electrode 14 is formed of a single metal layer, but the present invention is not limited to this embodiment. For example, instead of the second electrode 14 (see Figs. 2 and 3) shown in the above embodiment, a conductive substrate 31 including a second electrode 36 may be provided as in Modification 5 shown in Fig. 9. That is, the conductive member 100 shown in Modification 5 includes a conductive substrate 1 including a first electrode 6 and a conductive substrate 31 including a second electrode 36.
図9に示すように、導電基板31は、基板32および第二電極36を備えている。基板32は、フィルム基材33および樹脂層34を含む。基板32は、平坦面32aを有する。平坦面32aは、樹脂層34の下面に相当する。樹脂層34には、複数の凹部35が設けられている。 As shown in FIG. 9, the conductive substrate 31 includes a substrate 32 and a second electrode 36. The substrate 32 includes a film base material 33 and a resin layer 34. The substrate 32 has a flat surface 32a. The flat surface 32a corresponds to the lower surface of the resin layer 34. The resin layer 34 has a plurality of recesses 35.
なお、フィルム基材33、樹脂層34、および、複数の凹部35の各々は、上記実施形態で説明したフィルム基材3、樹脂層4、および、凹部5の各々と略同じ構造を有している。このため、フィルム基材33、樹脂層34、および、凹部35の各々に関する詳細な説明を省略する。 The film substrate 33, the resin layer 34, and each of the recesses 35 have substantially the same structure as the film substrate 3, the resin layer 4, and each of the recesses 5 described in the above embodiment. Therefore, detailed descriptions of the film substrate 33, the resin layer 34, and each of the recesses 35 will be omitted.
第二電極36は、複数の導電線37により構成された導体パターンからなる。複数の導電線37は、基板32の平坦面32aが位置する側に配置されている。各導電線37は、樹脂層34の各凹部35に埋設された導電性金属により構成されている。導電線37を構成する導電性金属は、上記実施形態で説明した、導電線7を構成する導電性金属と同じ材料からなる。そして、各導電線37の表面は、基板32の平坦面32aから露出した状態で、平坦面32aと略面一になるように構成されている。 The second electrode 36 is made of a conductor pattern made up of a plurality of conductive wires 37. The plurality of conductive wires 37 are arranged on the side of the substrate 32 where the flat surface 32a is located. Each conductive wire 37 is made of a conductive metal embedded in each recess 35 of the resin layer 34. The conductive metal that makes up the conductive wires 37 is made of the same material as the conductive metal that makes up the conductive wires 7 described in the above embodiment. The surface of each conductive wire 37 is configured to be approximately flush with the flat surface 32a when exposed from the flat surface 32a of the substrate 32.
なお、図示しないが、導電線37は、その表面が平坦面32aよりも上方(凹部35の底側)に向かって窪むように形成されていてもよい。この場合において、平坦面32aと、各導電線37における表面の最深部との距離は、-1.0μm以上1.0μm以下である。より好ましくは、当該距離は-0.1μm以上0.0μm以下である。 Although not shown, the conductive wires 37 may be formed so that their surfaces are recessed upward (towards the bottom of the recess 35) from the flat surface 32a. In this case, the distance between the flat surface 32a and the deepest part of the surface of each conductive wire 37 is -1.0 μm or more and 1.0 μm or less. More preferably, the distance is -0.1 μm or more and 0.0 μm or less.
以上のように、変形例5では、上記実施形態の導電基板1と同様の構造を有する導電基板31を、機能層10aの上側に設けたことから、上記実施形態の導電基板1と同様の作用効果を奏しうる。したがって、変形例5の導電部材100を適用したデバイスの本来的な機能が損なわれないようにすることができる。 As described above, in the fifth modification, the conductive substrate 31 having the same structure as the conductive substrate 1 of the above embodiment is provided on the upper side of the functional layer 10a, and therefore the same effect as the conductive substrate 1 of the above embodiment can be achieved. Therefore, it is possible to prevent the original function of the device to which the conductive member 100 of the fifth modification is applied from being impaired.
なお、図示しないが、変形例5の更なる変形例として、導電基板1を機能層10aの上側(電子輸送層13aの上面側)に配置する一方、導電基板31を機能層10aの下側(正孔輸送層11aの下面側)に配置してもよい。 Although not shown, as a further modification of modification 5, the conductive substrate 1 may be disposed on the upper side of the functional layer 10a (on the upper surface side of the electron transport layer 13a) while the conductive substrate 31 may be disposed on the lower side of the functional layer 10a (on the lower surface side of the hole transport layer 11a).
[その他の実施形態]
上記実施形態および上記変形例1,2では、第一電極6を備えた導電基板1が機能層10aの下側に配置される一方、第二電極14が機能層10aの上側に配置された形態を示したが、この形態に限られない。すなわち、図示しないが、第一電極6を備えた導電基板1が機能層10aの上側(上記実施形態では電子輸送層13aの上側)に配置される一方、第二電極14が機能層10aの下側(上記実施形態では正孔輸送層11aの上側)に配置されていてもよい。
[Other embodiments]
In the above embodiment and the above modified examples 1 and 2, the conductive substrate 1 having the first electrode 6 is disposed below the functional layer 10a, while the second electrode 14 is disposed above the functional layer 10a, but the present invention is not limited to this embodiment. That is, although not shown, the conductive substrate 1 having the first electrode 6 may be disposed above the functional layer 10a (above the electron transport layer 13a in the above embodiment), while the second electrode 14 may be disposed below the functional layer 10a (above the hole transport layer 11a in the above embodiment).
本開示は、太陽電池、OLED、調光デバイスなどのデバイスに適用可能な導電基板として産業上の利用が可能である。 This disclosure can be used industrially as a conductive substrate that can be applied to devices such as solar cells, OLEDs, and light control devices.
1,31:導電基板
2,32:基板
2a,32a:平坦面
3,33:フィルム基材
4,34:樹脂層
5,35:凹部
6:第一電極
7,37:導電線
11a,11b:正孔輸送層
12a:電荷発生層
12b:発光層
13a,13b:電子輸送層
14,36:第二電極
21:エレクトロクロミック層
22:電解質層
23:対極物質層
100:導電部材
1, 31: Conductive substrate 2, 32: Substrate 2a, 32a: Flat surface 3, 33: Film substrate 4, 34: Resin layer 5, 35: Recess 6: First electrode 7, 37: Conductive wire 11a, 11b: Hole transport layer 12a: Charge generation layer 12b: Light-emitting layer 13a, 13b: Electron transport layer 14, 36: Second electrode 21: Electrochromic layer 22: Electrolyte layer 23: Counter electrode material layer 100: Conductive member
Claims (4)
平坦面を有する基板と、
前記基板に形成された第一電極と、を備え、
前記第一電極は、各々が前記基板の前記平坦面が位置する側に埋設された導電性金属からなる複数の導電線により構成されており、
前記基板の前記平坦面は、前記機能層および前記第二電極を配置可能となるように構成されており、
前記複数の導電線の各々の表面は、前記平坦面と略面一になるように構成されている、導電基板。 A conductive substrate used to attach the functional layer and the second electrode,
A substrate having a flat surface;
a first electrode formed on the substrate;
the first electrode is composed of a plurality of conductive lines each made of a conductive metal embedded in the side of the substrate where the flat surface is located;
the flat surface of the substrate is configured so that the functional layer and the second electrode can be disposed thereon;
A conductive substrate, wherein a surface of each of the plurality of conductive lines is configured to be substantially flush with the flat surface.
前記基板の前記平坦面と、前記複数の導電線の各々における表面の最深部との距離は、-1.0μm以上0.0μm以下である、導電基板。 2. The conductive substrate according to claim 1,
A conductive substrate, wherein the distance between the flat surface of the substrate and the deepest part of the surface of each of the plurality of conductive lines is not less than −1.0 μm and not more than 0.0 μm.
平坦面を有する基板と、
前記基板に形成された第二電極と、を備え、
前記第二電極は、各々が前記基板の前記平坦面が位置する側に埋設された複数の導電線により構成されており、
前記基板の前記平坦面は、前記機能層および前記第一電極を配置可能となるように構成されており、
前記複数の導電線の各々の表面は、前記平坦面と略面一になるように構成されている、導電基板。 A conductive substrate used to attach the functional layer and the first electrode,
A substrate having a flat surface;
a second electrode formed on the substrate;
the second electrode is composed of a plurality of conductive lines each embedded in the side of the substrate where the flat surface is located;
the flat surface of the substrate is configured so that the functional layer and the first electrode can be disposed thereon;
A conductive substrate, wherein a surface of each of the plurality of conductive lines is configured to be substantially flush with the flat surface.
前記基板の前記平坦面と、前記複数の導電線の各々における表面の最深部との距離は、-1.0μm以上0.0μm以下である、導電基板。 The conductive substrate according to claim 3,
A conductive substrate, wherein the distance between the flat surface of the substrate and the deepest part of the surface of each of the plurality of conductive lines is not less than −1.0 μm and not more than 0.0 μm.
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| CN202380072078.1A CN120113379A (en) | 2022-11-14 | 2023-10-18 | Conductive substrate |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100656357B1 (en) * | 2005-10-25 | 2006-12-11 | 한국전자통신연구원 | Transparent conductive substrate including metal grid and dye-sensitized solar cell having same |
| JP2013016670A (en) * | 2011-07-05 | 2013-01-24 | Fujifilm Corp | Transparent conductive film, method for producing the same, and organic thin-film solar cell |
| JP2013102055A (en) * | 2011-11-08 | 2013-05-23 | Oike Ind Co Ltd | Transparent electrode substrate and method for manufacturing the same |
| WO2018180961A1 (en) * | 2017-03-31 | 2018-10-04 | リンテック株式会社 | Transparent conductive laminate and production method therefor |
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- 2023-10-18 CN CN202380072078.1A patent/CN120113379A/en active Pending
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100656357B1 (en) * | 2005-10-25 | 2006-12-11 | 한국전자통신연구원 | Transparent conductive substrate including metal grid and dye-sensitized solar cell having same |
| JP2013016670A (en) * | 2011-07-05 | 2013-01-24 | Fujifilm Corp | Transparent conductive film, method for producing the same, and organic thin-film solar cell |
| JP2013102055A (en) * | 2011-11-08 | 2013-05-23 | Oike Ind Co Ltd | Transparent electrode substrate and method for manufacturing the same |
| WO2018180961A1 (en) * | 2017-03-31 | 2018-10-04 | リンテック株式会社 | Transparent conductive laminate and production method therefor |
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