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WO2024189765A1 - Système de traitement et procédé de traitement - Google Patents

Système de traitement et procédé de traitement Download PDF

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Publication number
WO2024189765A1
WO2024189765A1 PCT/JP2023/009793 JP2023009793W WO2024189765A1 WO 2024189765 A1 WO2024189765 A1 WO 2024189765A1 JP 2023009793 W JP2023009793 W JP 2023009793W WO 2024189765 A1 WO2024189765 A1 WO 2024189765A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing
modeling
irradiation
light
energy beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2023/009793
Other languages
English (en)
Japanese (ja)
Inventor
啓通 村田
貴行 舩津
崇一朗 飯田
亮介 道井
博之 長坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to PCT/JP2023/009793 priority Critical patent/WO2024189765A1/fr
Publication of WO2024189765A1 publication Critical patent/WO2024189765A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/34—Laser welding for purposes other than joining
    • B23K26/342—Build-up welding

Definitions

  • the present invention relates to the technical field of, for example, a processing system and a processing method capable of processing an object.
  • Patent Document 1 An example of a processing system for processing an object is described in Patent Document 1.
  • One of the technical challenges of such a processing system is to process the object appropriately.
  • a processing system which includes a processing device that performs additional processing to form a model on an object by melting the modeling material supplied from the material supply member with the energy beam emitted from the irradiation device, a control device capable of controlling the processing device, and an imaging device, wherein the control device controls the processing device to melt the modeling material by irradiating the energy beam on the modeling material in the space between the material supply member and the object, and to supply the molten modeling material to the object to form the model on the object, the imaging device generates a molten material image by imaging the modeling material melted by irradiation of the energy beam in the space between the material supply member and the object, and the control device controls the processing device based on the molten material image.
  • a processing system includes a processing device that performs additional processing to form a structure on an object by melting the modeling material supplied from the material supply member with the energy beam emitted from the irradiation device, a control device capable of controlling the processing device, and an imaging device, wherein the control device controls the processing device to melt the modeling material by irradiating the energy beam on the modeling material in the space between the material supply member and the object, and to supply the molten modeling material to the object to form the structure on the object, the imaging device images the modeling material in the space between the material supply member and the object, and the control device controls the processing device based on the imaging result of the imaging device.
  • a processing system includes a material supplying member that supplies a modeling material, an irradiation device that emits an energy beam, and a processing device that performs additional processing to form a model on an object by melting the modeling material supplied from the material supplying member with the energy beam emitted from the irradiation device, a control device capable of controlling the processing device, and a measuring device, wherein the control device controls the processing device to melt the modeling material by irradiating the energy beam on the modeling material in the space between the material supplying member and the object, and to supply the molten modeling material to the object to form the model on the object, and the measuring device acquires information about the modeling material melted by irradiating the energy beam.
  • a processing system comprising a material supplying member that supplies a modeling material, an irradiation device that emits an energy beam, and a processing device that performs additional processing to form a model on an object by melting the modeling material supplied from the material supplying member with the energy beam emitted from the irradiation device, a control device capable of controlling the processing device, and a measuring device, wherein the control device controls the processing device to melt the modeling material by irradiating the energy beam on the modeling material in the space between the material supplying member and the object, and to supply the molten modeling material to the object to form the model on the object, the measuring device measures the modeling material in the space between the material supplying member and the object, and the control device controls the processing device based on the measurement results of the measuring device.
  • a processing method includes the steps of: supplying a modeling material from a material supply member; emitting an energy beam from an irradiation device; performing additional processing by melting the modeling material supplied from the material supply member in the space between the material supply member and the object with the energy beam emitted from the irradiation device to form a model on the object; and using an imaging device to generate a molten material image by imaging the modeling material melted by irradiation of the energy beam in the space between the material supply member and the object, based on the molten material image, thereby generating a molten material image, wherein performing the additional processing includes irradiating the modeling material in the space between the material supply member and the object with the energy beam to melt the modeling material, and supplying the molten modeling material to the object to form the model on the object.
  • a processing method includes supplying a modeling material from a material supply member, emitting an energy beam from an irradiation device, performing additional processing by melting the modeling material supplied from the material supply member in the space between the material supply member and the object with the energy beam emitted from the irradiation device to form a model on the object, and imaging the modeling material in the space between the material supply member and the object using an imaging device, wherein performing the additional processing includes irradiating the energy beam to the modeling material in the space between the material supply member and the object based on the imaging result of the imaging device, thereby melting the modeling material, and supplying the molten modeling material to the object to form the model on the object.
  • a processing method includes supplying a modeling material from a material supply member, emitting an energy beam from an irradiation device, performing additional processing by melting the modeling material supplied from the material supply member in the space between the material supply member and the object with the energy beam emitted from the irradiation device to form a model on the object, and acquiring information about the modeling material melted by irradiating the energy beam using a measuring device, wherein performing the additional processing includes melting the modeling material by irradiating the energy beam on the modeling material in the space between the material supply member and the object, and supplying the molten modeling material to the object to form the model on the object.
  • a processing method includes supplying a modeling material from a material supply member, emitting an energy beam from an irradiation device, performing additional processing to melt the modeling material supplied from the material supply member in the space between the material supply member and the object with the energy beam emitted from the irradiation device to form a model on the object, and measuring the modeling material in the space between the material supply member and the object using a measuring device, wherein performing the additional processing includes irradiating the energy beam to the modeling material in the space between the material supply member and the object based on the measurement results of the measuring device, thereby melting the modeling material, and supplying the molten modeling material to the object to form the model on the object.
  • FIG. 1 is a cross-sectional view showing the configuration of a machining system according to the present embodiment.
  • FIG. 2 is a block diagram showing the configuration of the machining system of the present embodiment.
  • FIG. 3 is a plan view showing the bottom surface of the material nozzle.
  • Each of Figs. 4(a) to 4(c) is a plan view showing an example of a material supply region in a material supply surface.
  • FIG. 5 is a cross-sectional view showing the structure of the irradiation optical system.
  • FIG. 6A is a plan view showing the movement trajectory of the target irradiation area in a processing unit area
  • FIG. 6B is a plan view showing the movement trajectory of the target irradiation area on the printing surface.
  • Figures 7(a) and 7(b) are plan views showing the movement trajectory of the target irradiation area within a processing unit area
  • Figure 7(c) is a plan view showing the movement trajectory of the target irradiation area on the printing surface.
  • Each of Figures 8(a) to 8(e) is a cross-sectional view showing a process of forming a structure layer by the first forming operation.
  • Each of Fig. 9(a) to Fig. 9(c) is a cross-sectional view showing a process for forming a three-dimensional structure.
  • Figures 10(a) to 10(d) is a cross-sectional view showing a process of forming a structure layer by the second forming operation.
  • FIG. 11 shows the processing light passing through the irradiated surface of the material.
  • Figures 12(a), 12(c), and 12(d) is a plan view showing the movement trajectory of the target irradiation area within the processing unit area
  • each of Figures 12(b) and 12(e) is a plan view showing the movement trajectory of the target irradiation area on the printing surface.
  • FIG. 13( a ) to FIG. 13 ( c ) is a plan view showing the relationship between the material supply region and the irradiation unit region.
  • FIG. 14A is a cross-sectional view showing an example of a processing head performing the first model-forming operation
  • FIG. 14B is a cross-sectional view showing an example of a processing head performing the second model-forming operation.
  • FIG. 15 is a cross-sectional view showing an example of an operation for controlling a material control point.
  • FIG. 16 is a cross-sectional view showing an example of an operation for controlling a material control point.
  • Figure 17(a) is a plan view showing a structural layer formed by performing both the first and second modeling operations
  • Figure 17(b) is a plan view showing a part of the structural layer (outer wall object) formed by performing the first modeling operation
  • Figure 17(c) is a plan view showing another part of the structural layer (filled object) formed by performing the second modeling operation.
  • Figure 18(a) is a plan view showing a structural layer formed by performing both the first and second modeling operations
  • Figure 18(b) is a cross-sectional view showing a structural layer formed by performing both the first and second modeling operations.
  • FIG. 19 is a cross-sectional view showing processing light that is changed to shape a structure layer by performing both the first and second modeling operations.
  • FIG. 20 is a cross-sectional view showing a three-dimensional structure formed by performing both the first and second modeling operations.
  • FIG. 21( a ) conceptually shows a separation device that separates a three-dimensional structure from a workpiece
  • FIG. 21( b ) shows the three-dimensional structure separated from the workpiece.
  • FIG. 22 is a cross-sectional view showing a processing light used in a first application and a processing light used in a second application.
  • FIG. 23 is a cross-sectional view showing a processing light used in a first application and a processing light used in a second application.
  • FIG. 24 is a cross-sectional view showing a processing light used in a first application and a processing light used in a second application.
  • FIG. 25 is a cross-sectional view showing a workpiece to which a modeling material having a controlled temperature distribution is supplied.
  • FIG. 26(a) and 26(b) shows the relationship between a material supply area where the modeling material is supplied and the movement trajectory of a beam passing area.
  • FIG. 27(a) and 27(b) shows the relationship between a material supply area where the modeling material is supplied and the movement trajectory of a beam passing area.
  • Figures 28(a) and 28(b) shows the relationship between a material supply area where the modeling material is supplied and the movement trajectory of a beam passing area.
  • Figures 29(a) and 29(b) shows the substantial movement trajectory of the beam passing area realized by controlling the light source.
  • FIG. 30 shows the relationship between the number of processing beams, the size of the beam passing area, and the moving speed of the beam passing area.
  • FIG. 31 shows the recoil force generated in a molten modeling material upon irradiation with processing light.
  • FIG. 32 shows the distribution of build material supply on the build surface.
  • FIG. 33(a) is a cross-sectional view showing the relationship between the material supply region and the irradiation unit region
  • FIG. 33(b) is a plan view showing the relationship between the material supply region and the irradiation unit region.
  • FIG. 34 is a cross-sectional view showing the relationship between the material supply region and the irradiation unit region.
  • FIG. 35 is a cross-sectional view showing an example of an operation for controlling the size of the material supply region.
  • FIG. 36( a ) and FIG. 36 ( b ) is a cross-sectional view showing a measuring device.
  • FIG. 37 is a cross-sectional view showing an example of an operation for controlling the size of the material supply region.
  • FIG. 38 is a cross-sectional view showing an imaging device provided in the processing system.
  • FIG. 39 is a cross-sectional view showing an imaging device provided in the processing system.
  • FIG. 40 is a flowchart showing the flow of the molten material feedback control operation based on the material image.
  • FIG. 41 shows an image of the molten material.
  • FIG. 42 shows an additive image that is produced by adding (ie, combining) multiple molten material images.
  • FIG. 43 is a timing chart showing the relationship between the size of the molten material region and the target size.
  • FIG. 44 is a cross-sectional view showing an imaging device provided in the processing system.
  • FIG. 46 is a plan view showing a shaped object having a desired shape pattern to be shaped in a processing unit area.
  • FIG. 47(a) and Fig. 47(b) is a plan view showing a shaped object having a desired shape pattern to be shaped in a processing unit area.
  • FIG. 48 is a plan view showing a shaped object formed by moving the processing unit area on the printing surface while forming a shaped object having a desired shape pattern in the processing unit area.
  • FIG. 49 is a plan view showing a shaped object formed by moving the processing unit area on the printing surface while forming a shaped object having a desired shape pattern in the processing unit area.
  • FIG. 50 is a plan view showing a shaped object formed by moving the processing unit area on the printing surface while forming a shaped object having a desired shape pattern in the processing unit area.
  • FIG. 51 is a plan view showing the actual shape pattern of the object to be formed on the forming surface, and the shape pattern obtained by compressing the actual shape pattern of the object to be formed on the forming surface along the movement direction of the processing unit area.
  • Figure 52 is a plan view showing the actual shape pattern of the object to be formed on the forming surface, and the shape pattern obtained by deforming the actual shape pattern of the object to be formed on the forming surface in a deformation manner that can offset the distortion that occurs in the shape pattern of the object to be formed on the forming surface.
  • Figure 53(a) is a plan view showing a target movement trajectory of a processing unit area
  • Figure 53(b) is a plan view showing a linear object formed on a printing surface when the processing unit area moves along the target movement trajectory shown in Figure 53(a).
  • FIG. 54(a) is a plan view showing a structure layer
  • FIG. 54(b) is a plan view showing an operation of changing the width of a processing unit area so as to form the structure layer shown in FIG.
  • FIG. 55(a) is a plan view showing a structural layer
  • FIG. 55(b) is a plan view showing an operation for changing the width of a processing unit area so as to form the structural layer shown in FIG. 55(a).
  • Figures 56(a) to 56(c) is a side view showing an example of a material nozzle.
  • a processing system and a processing method will be described with reference to the drawings.
  • a processing system SYS capable of processing a workpiece W
  • a processing system SYS that performs additional processing based on laser metal deposition (LMD).
  • LMD laser metal deposition
  • Additional processing based on laser metal deposition is an additional processing that forms a molded object that is integrated with the workpiece W or that can be separated from the workpiece W by melting a modeling material M supplied to the workpiece W with processing light EL (i.e., an energy beam in the form of light).
  • processing light EL i.e., an energy beam in the form of light
  • the positional relationship of various components constituting the machining system SYS will be described using an XYZ orthogonal coordinate system defined by mutually orthogonal X-axis, Y-axis, and Z-axis.
  • the X-axis direction and the Y-axis direction are each assumed to be horizontal (i.e., a predetermined direction in a horizontal plane), and the Z-axis direction is assumed to be vertical (i.e., a direction perpendicular to the horizontal plane, and essentially an up-down direction).
  • the rotation directions (in other words, tilt directions) around the X-axis, Y-axis, and Z-axis are respectively referred to as the ⁇ X direction, the ⁇ Y direction, and the ⁇ Z direction.
  • the Z-axis direction may be the gravity direction.
  • the XY plane may be the horizontal direction.
  • Figure 1 is a cross-sectional view that shows a schematic configuration of the machining system SYS of this embodiment.
  • Figure 2 is a block diagram that shows the configuration of the machining system SYS of this embodiment.
  • the processing system SYS is capable of performing additive processing on the workpiece W.
  • the processing system SYS is capable of forming a structure that is integrated with (or separable from) the workpiece W by performing additive processing on the workpiece W.
  • the additional processing performed on the workpiece W corresponds to processing that adds to the workpiece W a structure that is integrated with (or separable from) the workpiece W.
  • the structure in this embodiment may refer to any object formed by the processing system SYS.
  • the processing system SYS is capable of forming a three-dimensional structure ST (that is, a three-dimensional structure that has a size in all three-dimensional directions, a solid object, in other words, a structure that has a size in the X-axis direction, the Y-axis direction, and the Z-axis direction) as an example of a structure.
  • a three-dimensional structure ST that is, a three-dimensional structure that has a size in all three-dimensional directions, a solid object, in other words, a structure that has a size in the X-axis direction, the Y-axis direction, and the Z-axis direction
  • the processing system SYS can perform additional processing on the stage 31.
  • the workpiece W is a mounted object, which is an object placed on the stage 31, the processing system SYS can perform additional processing on the mounted object.
  • the mounted object placed on the stage 31 may be another three-dimensional structure ST (i.e., an existing structure) formed by the processing system SYS.
  • the workpiece W may also be held by a holder that can be placed on the stage 31. In other words, the holder may hold the workpiece W, and the holder holding the workpiece W may be placed on the stage 31.
  • the holder may also be called a jig, holder, holding member, mounting member, or clamp. Note that FIG. 1 shows an example in which the workpiece W is an existing structure placed on the stage 31. In the following, we will also use an example in which the workpiece W is an existing structure placed on the stage 31.
  • the workpiece W may be an item that has a missing part and needs to be repaired.
  • the processing system SYS may perform repair processing to repair the item that needs to be repaired by performing additional processing to create a shaped object to fill in the missing part.
  • the additional processing performed by the processing system SYS may include additional processing to add a shaped object to the workpiece W to fill in the missing part.
  • the processing system SYS is capable of performing additive processing based on the laser build-up welding method.
  • the processing system SYS can be said to be a 3D printer that processes objects using additive processing technology.
  • the additive processing technology may also be called rapid prototyping, rapid manufacturing, or additive manufacturing.
  • the laser build-up welding method (LMD) may also be called DED (Directed Energy Deposition).
  • the processing system SYS which uses additive processing technology, forms multiple structural layers SL (see Figure 8 described below) in sequence to form a three-dimensional structure ST in which multiple structural layers SL are stacked.
  • the processing system SYS first sets the surface of the workpiece W as the printing surface MS on which the object is actually printed, and prints the first structural layer SL on the printing surface MS.
  • the processing system SYS sets the surface of the first structural layer SL as a new printing surface MS, and prints the second structural layer SL on the printing surface MS. Thereafter, the processing system SYS repeats the same operations to form a three-dimensional structure ST in which multiple structural layers SL are stacked.
  • the processing system SYS performs additive processing by processing the modeling material M using processing light EL, which is an energy beam.
  • the modeling material M is a material that can be melted by irradiation with processing light EL of a predetermined intensity or higher.
  • at least one of a metallic material and a resinous material can be used as the modeling material M.
  • An example of a metallic material is at least one of a material containing copper, a material containing tungsten, and a material containing stainless steel.
  • other materials different from the metallic material and the resinous material may also be used as the modeling material M.
  • the modeling material M is a powder material. In other words, the modeling material M is a powder. However, the modeling material M does not have to be a powder.
  • at least one of a wire-shaped modeling material and a gas-shaped modeling material may be used as the modeling material M.
  • the workpiece W may also be an object that includes a material that can be melted by irradiation with processing light EL of a predetermined intensity or higher.
  • the material of the workpiece W may be the same as or different from the modeling material M.
  • at least one of a metallic material and a resinous material can be used as the material of the workpiece W.
  • metallic materials include at least one of a material containing copper, a material containing tungsten, and a material containing stainless steel.
  • other materials different from metallic materials and resinous materials may also be used as the material of the workpiece W.
  • the processing system SYS includes a material supply source 1, a processing unit 2, a stage unit 3, a light source 4, a gas supply source 5, and a control unit 7, as shown in Figures 1 and 2.
  • the processing unit 2 and the stage unit 3 may be housed in a chamber space 63IN inside the housing 6.
  • the processing system SYS may perform additional processing in the chamber space 63IN. Note that at least one of the processing unit 2 and the stage unit 3 does not have to be housed in the chamber space 63IN inside the housing 6.
  • the processing unit 2 may be referred to as a processing device.
  • An apparatus including the processing unit 2 and at least one of the material supply source 1, the stage unit 3, the light source 4, and the gas supply source 5 may be referred to as a processing device.
  • the control unit 7 may be referred to as a control device.
  • the material supply source 1 supplies the modeling material M to the processing unit 2.
  • the material supply source 1 supplies a desired amount of modeling material M according to the required amount so that the amount of modeling material M required per unit time for additional processing is supplied to the processing unit 2.
  • the processing unit 2 processes the modeling material M supplied from the material supply source 1 to form a model.
  • the processing unit 2 is equipped with a processing head 21, a head drive system 22, and a nozzle drive system 23.
  • the processing head 21 is equipped with an irradiation device 210 and a material nozzle 212.
  • the processing head 21 may also be referred to as a processing device.
  • the irradiation device 210 is a device for emitting the processed light EL.
  • the irradiation device 210 is equipped with an irradiation optical system 211.
  • the irradiation optical system 211 is an optical system for emitting the processed light EL.
  • the irradiation optical system 211 is optically connected to the light source 4 that emits (generates) the processed light EL via a light transmission member 41.
  • An example of the light transmission member 41 is at least one of an optical fiber and a light pipe.
  • the processing system SYS includes two light sources 4 (specifically, light sources 4#1 and 4#2), and the irradiation optical system 211 is optically connected to the light sources 4#1 and 4#2 via the optical transmission members 41#1 and 41#2, respectively.
  • the irradiation optical system 211 emits both the processed light EL propagating from the light source 4#1 via the optical transmission member 41#1 and the processed light EL propagating from the light source 4#2 via the optical transmission member 41#2.
  • the processed light EL generated by the light source 4#1 is referred to as “processed light EL#1” and the processed light EL generated by the light source 4#2 is referred to as “processed light EL#2" as necessary.
  • the "processed light EL” may mean at least one of the processed lights EL#1 and EL#2.
  • the processing system SYS may be provided with a single light source 4 instead of multiple light sources 4.
  • the irradiation optical system 211 may emit a single processing light EL instead of emitting multiple processing light EL.
  • the irradiation optical system 211 emits the processing light EL from the irradiation optical system 211 downward (i.e., toward the -Z side).
  • the irradiation optical system 211 emits the processing light EL so that the processing light EL travels from the irradiation optical system 211 along the irradiation direction (in other words, the traveling direction) along the Z axis.
  • a stage 31 is arranged below the irradiation optical system 211. When a workpiece W is placed on the stage 31, the irradiation optical system 211 irradiates the emitted processing light EL onto the printing surface MS.
  • the irradiation optical system 211 may irradiate the processing light EL onto a target irradiation area (target irradiation position) EA that is set on the printing surface MS as the area to be irradiated (typically, focused) with the processing light EL.
  • the target irradiation area EA to which the irradiation optical system 211 irradiates the processing light EL#1 will be referred to as the "target irradiation area EA#1"
  • the target irradiation area EA to which the irradiation optical system 211 irradiates the processing light EL#2 will be referred to as the "target irradiation area EA#2" as necessary.
  • the state of the irradiation optical system 211 can be switched between a state in which the processing light EL is irradiated to the target irradiation area EA and a state in which the processing light EL is not irradiated to the target irradiation area EA under the control of the control unit 7.
  • the irradiation optical system 211 may form a molten pool MP on the printing surface MS by irradiating the printing surface MS with processing light EL.
  • the irradiation optical system 211 may form a molten pool MP#1 on the printing surface MS by irradiating the printing surface MS with processing light EL#1.
  • the irradiation optical system 211 may form a molten pool MP#2 on the printing surface MS by irradiating the printing surface MS with processing light EL#2.
  • the molten pool MP#1 and the molten pool MP#2 may be integrated. Alternatively, the molten pool MP#1 and the molten pool MP#2 may be separated from each other.
  • the molten pool MP#1 is formed on the printing surface MS by irradiating the processing light EL#1. It is not necessary that the molten pool MP#2 is formed on the printing surface MS by irradiating the processing light EL#2.
  • the irradiation optical system 211 may irradiate the material irradiation surface ES with the processing light EL.
  • the material irradiation surface ES is a virtual optical surface located between the irradiation optical system 211 and the modeling surface MS.
  • the irradiation optical system 211 may melt the modeling material M passing through the material irradiation surface ES by irradiating the material irradiation surface ES with the processing light EL.
  • the material nozzle 212 supplies the modeling material M (e.g., ejects, jets, spouts, or sprays). For this reason, the material nozzle 212 may be referred to as a material supply member.
  • the material nozzle 212 is physically connected to the material supply source 1, which is a supply source of the modeling material M, via the supply pipe 11 and the mixer 12.
  • the material nozzle 212 supplies the modeling material M supplied from the material supply source 1 via the supply pipe 11 and the mixer 12.
  • the material nozzle 212 may pressure-feed the modeling material M supplied from the material supply source 1 via the supply pipe 11.
  • the modeling material M from the material supply source 1 and the conveying gas i.e., a pressure-feeding gas, for example, an inert gas such as nitrogen or argon
  • a pressure-feeding gas for example, an inert gas such as nitrogen or argon
  • the material nozzle 212 supplies the modeling material M together with the conveying gas.
  • a purge gas supplied from the gas supply source 5 is used as the conveying gas.
  • the gas used for transport may be supplied from a gas supply source other than gas supply source 5.
  • the material nozzle 212 supplies the modeling material M downward (i.e., toward the -Z side) from the material nozzle 212.
  • the stage 31 is disposed below the material nozzle 212. When a workpiece W is mounted on the stage 31, the material nozzle 212 supplies the modeling material M toward the modeling surface MS.
  • a material supply port 2121 is formed on the lower surface of the material nozzle 212.
  • a ring-shaped material supply port 2121 is formed on the lower surface of the material nozzle 212.
  • the shape of the outer edge of the material supply port 2121 along the plane intersecting the Z axis is circular, but it may be a shape other than circular.
  • the shape of the outer edge of the material supply port 2121 along the plane intersecting the Z axis may be elliptical or polygonal. In the example shown in FIG.
  • the material nozzle 212 has a material supply port 2121 that is a continuous opening in the shape of a ring or annular zone formed on the lower surface.
  • the material nozzle 212 may have a plurality of material supply ports 2121 that are arc-shaped, circular, elliptical, or rectangular openings formed on the lower surface.
  • the material nozzle 212 supplies the modeling material M from the material supply port 2121.
  • the material nozzle 212 may supply the modeling material M so that the shape of the material supply area MSA in a virtual material supply surface PL intersecting the Z-axis between the material nozzle 212 and the modeling surface MS becomes a shape corresponding to the material supply port 2121. For example, as shown in FIG.
  • the material nozzle 212 may supply the modeling material M so that the shape of the material supply area MSA in each of the material supply surfaces PL#1 and PL#2, which are examples of the material supply surface PL, becomes an annular shape corresponding to the annular material supply port 2121. For example, as shown in FIG.
  • the material nozzle 212 may supply the modeling material M so that the shape of the material supply area MSA in each of the material supply surfaces PL#4 and PL#5, which are examples of the material supply surface PL, becomes an annular shape corresponding to the annular material supply port 2121. For example, as shown in FIG.
  • the material nozzle 212 may supply the modeling material M so that the shape of the material supply area MSA in each of the material supply surfaces PL#6 and PL#7, which are examples of the material supply surface PL, becomes annular in accordance with the annular material supply port 2121.
  • the material supply area MSA is a virtual area in which the modeling material M is supplied within a virtual material supply surface PL that intersects with the Z-axis between the material nozzle 212 and the modeling surface MS.
  • the material supply area MSA is a virtual area in the material supply surface PL through which the modeling material M supplied from the material nozzle 212 passes.
  • the material nozzle 212 may be considered to be supplying the modeling material M to the material supply area MSA. Since the modeling material M passes through the material supply surface PL, the material supply surface PL may be referred to as a material passing surface.
  • the amount (supply amount) of the modeling material M supplied to each position in the material supply surface PL may vary over time. For example, while the modeling material M is supplied to a position in the material supply surface PL at a first time, the modeling material M may not be supplied to the same position in the material supply surface PL at a second time different from the first time. In other words, when the modeling material M is a powdered material, the amount (passing amount) of the modeling material M passing through each position in the material supply surface PL may vary over time.
  • the modeling material M may not pass through the same position in the material supply surface PL at a second time different from the first time. This is because it is unlikely that the trajectory of the powdered modeling material M supplied from the material nozzle 212 will always be the same.
  • the material supply area MSA may be a virtual area whose outer edge (in other words, boundary) is a line connecting multiple positions that satisfy the condition that "the integrated value of the supply amount (passing amount) of the modeling material M per unit time in the material supply surface PL coincides with a predetermined ratio of the maximum integrated value of the supply amount (passing amount) of the modeling material M per unit time in the material supply surface PL."
  • a predetermined ratio is 50% or a ratio greater than 50%.
  • Another example of the predetermined ratio is 60% or a ratio greater than 60%.
  • Another example of the predetermined ratio is 70% or a ratio greater than 70%.
  • Another example of the predetermined ratio is 80% or a ratio greater than 80%.
  • Another example of the predetermined ratio is 90% or a ratio greater than 90%.
  • the material nozzle 212 may supply the modeling material M from the material supply port 2121 in a material supply direction inclined with respect to the Z-axis. In this case, the material nozzle 212 may supply the modeling material M from multiple locations in the material supply port 2121 in a material supply direction that is different from each other. In other words, the material nozzle 212 may supply the modeling material M from multiple supply positions in the material supply port 2121 in a material supply direction that is different from each other. As an example, as shown in FIG. 3 and FIG. 4(a) to FIG.
  • the material nozzle 212 may supply the modeling material M from the first supply port portion 2122 of the material supply port 2121 along a first material supply direction inclined with respect to the Z axis, and from the second supply port portion 2123 of the material supply port 2121 different from the first supply port portion 2122 along a second material supply direction inclined with respect to the Z axis and different from the first material supply direction.
  • the size (e.g., outer diameter) of the material supply area MSA in the material supply surface PL typically changes depending on the distance between the material supply surface PL along the Z axis and the material nozzle 212 (particularly the material supply port 2121).
  • the material nozzle 212 supplies the modeling material M so that the size of the material supply area MSA in the material supply surface PL becomes smaller as the distance between the material supply surface PL and the material nozzle 212 (particularly the material supply port 2121) along the Z axis becomes longer.
  • the material nozzle 212 supplies the modeling material M so that the modeling material M supplied from the material nozzle 212 gradually converges.
  • the size (e.g., outer diameter) of the material supply area MSA in the material supply surface PL#2 is smaller than the size (e.g., outer diameter) of the material supply area MSA in the material supply surface PL#1 located between the material supply surface PL#2 and the material nozzle 212 (i.e., closer to the material nozzle 212 than the material supply surface PL#2).
  • the material nozzle 212 may supply the modeling material M so that multiple virtual material supply axes SX extending along multiple material supply directions intersect.
  • the material nozzle 212 may supply the modeling material M so that a virtual material supply axis SX#1 extending along the material supply direction of the modeling material M supplied from the first supply port portion 2122 of the material supply port 2121 and a virtual material supply axis SX#2 extending along the material supply direction of the modeling material M supplied from the second supply port portion 2123 of the material supply port 2121 intersect.
  • the material nozzle 212 may supply the modeling material M such that multiple virtual material supply axes SX each extending along multiple material supply directions intersect above the modeling surface MS.
  • the material nozzle 212 may supply the modeling material M such that multiple virtual material supply axes SX each extending along multiple material supply directions intersect in the space between the modeling surface MS and the material nozzle 212.
  • the modeling material M supplied from multiple locations of the material supply port 2121 along different material supply directions may intersect above the modeling surface MS.
  • the modeling material M supplied from multiple locations of the material supply port 2121 along different material supply directions may intersect in the space between the modeling surface MS and the material nozzle 212.
  • the shape of the material supply area MSA may be a shape other than annular.
  • the shape of the material supply area MSA may be circular or a shape that can be regarded as circular.
  • the material nozzle 212 may supply the modeling material M so that multiple virtual material supply axes SX extending along multiple material supply directions intersect below the modeling surface MS.
  • the modeling material M supplied from multiple locations of the material supply port 2121 along different directions may not intersect.
  • the modeling material M supplied from multiple locations of the material supply port 2121 along different directions may reach the modeling surface MS before intersecting with each other.
  • the shape of the material supply area MSA in the modeling surface MS that may be considered as the material supply surface PL, the shape of the material supply area MSA may be annular.
  • the shape of the material supply area MSA may be different from the annular shape.
  • the shape of the material supply area MSA may be circular or a shape that can be considered as circular.
  • the material nozzle 212 may supply the printing material M such that multiple virtual material supply axes SX each extending along multiple material supply directions intersect on the printing surface MS.
  • the printing material M supplied from multiple locations of the material supply port 2121 along multiple different material supply directions may intersect on the printing surface MS.
  • the shape of the material supply area MSA may be a shape other than annular.
  • the shape of the material supply area MSA may be circular or a shape that can be regarded as circular.
  • the material control point MCP the position (point) where multiple virtual material supply axes SX each extending along multiple material supply directions intersect is referred to as the material control point MCP.
  • the material control point MCP may be referred to as a powder control point.
  • the material nozzle 212 can be said to supply the modeling material M with the material control point MCP located above the modeling surface MS.
  • the material nozzle 212 can be said to supply the modeling material M with the material control point MCP located in the space between the modeling surface MS and the material nozzle 212.
  • FIG. 4(a) the material nozzle 212 can be said to supply the modeling material M with the material control point MCP located in the space between the modeling surface MS and the material nozzle 212.
  • the material nozzle 212 can be said to supply the modeling material M with the material control point MCP located below the modeling surface MS.
  • the material nozzle 212 supplies the molding material M in a state where the material control point MCP is located inside the workpiece W, below the workpiece W, inside the already-modeled structural layer SL, and/or below the already-modeled structural layer SL.
  • the material nozzle 212 supplies the molding material M in a state where the material control point MCP is located on the molding surface MS.
  • the material supply direction from the material nozzle 212 is typically a direction specific to the material nozzle 212.
  • the material control point MCP may be considered to be a point specific to the material nozzle 212.
  • the material control point MCP may be considered to be a point determined based on the material nozzle 212.
  • a position (point) other than the position (point) where multiple virtual material supply axes SX intersect may be used as the material control point MCP.
  • the positional relationship between the material control point MCP and the material nozzle 212 may be considered to be fixed.
  • the modeling material M supplied from the material nozzle 212 along multiple different material supply directions is supplied to the material control point MCP.
  • the material control point MCP may be considered to be a point to which the modeling material M is supplied from the material nozzle 212 along multiple different material supply directions in a situation where there is no object blocking the modeling material M.
  • the material control point MCP may be considered to be a point located in a space where the modeling material M can be supplied from the material nozzle 212 in a situation where there is no object blocking the modeling material M.
  • the material control point MCP when the material control point MCP is located below the printing surface MS as described above, the material control point MCP may be located in the space occupied by the object (typically, the workpiece W) that blocks the modeling material M.
  • the material control point MCP may be located inside the object (typically, the workpiece W) that blocks the modeling material M.
  • the material control point MCP may be considered to be the point where the modeling material M supplied from the material nozzle 212 along multiple different material supply directions intersect in a situation where there is no object blocking the modeling material M.
  • the material control point MCP may be considered to be the point where the modeling material M supplied from the material nozzle 212 along multiple different material supply directions converges in a situation where there is no object blocking the modeling material M.
  • the material control point MCP may be considered to be a point where the modeling material M supplied from the material nozzle 212 along multiple different material supply directions is concentrated in a situation where there is no object blocking the modeling material M.
  • the density of the modeling material M in the material supply plane PL located at the same position in the Z-axis direction as the material control point MCP is higher than the density of the modeling material M in the material supply plane PL located away from the material control point MCP along the Z-axis direction.
  • the density of the modeling material M is highest in the material supply plane PL located at the same position in the Z-axis direction as the material control point MCP.
  • the material control point MCP may be considered to be a point located at the same position in the Z-axis direction as one material supply plane PL that satisfies the condition that "the density of the modeling material M in the material supply plane PL is highest.”
  • the material control point MCP may be regarded as a point whose position in the Z-axis direction is the same as one material supply surface PL that satisfies the condition that "the shape of the material supply area MSA within the material supply surface PL is circular or a shape that can be regarded as circular (i.e., a shape other than an annular shape)."
  • the processing light EL emitted from the irradiation optical system 211 may travel through a space at least partially surrounded by the modeling material M supplied from the material nozzle 212.
  • the processing light EL traveling through the space at least partially surrounded by the modeling material M supplied from the material nozzle 212 may be irradiated onto the modeling surface MS.
  • the processing light EL emitted from the irradiation optical system 211 may travel through a cone-shaped space whose outer edge is the modeling material M supplied from the material nozzle 212.
  • the processing light EL emitted from the irradiation optical system 211 may travel through a cone-shaped space whose outer edge is the modeling material M supplied from the material nozzle 212.
  • the processing light EL emitted from the irradiation optical system 211 may travel through a space sandwiched between the modeling materials M supplied from multiple locations of the material nozzle 212.
  • the processing light EL traveling through the space sandwiched between the modeling materials M supplied from multiple locations of the material nozzle 212 may be irradiated onto the modeling surface MS.
  • the processing light EL emitted from the irradiation optical system 211 may travel through a space sandwiched between the modeling material M supplied from the first supply port portion 2122, which is a part of the material supply port 2121, and the modeling material M supplied from the second supply port portion 2123, which is another part of the material supply port 2121.
  • the processing light EL emitted from the irradiation optical system 211 may travel through a cone-shaped or frustum-shaped space with multiple material supply axes SX extending along multiple material supply directions as ridge lines.
  • the head drive system 22 moves the processing head 21 under the control of the control unit 7. That is, the head drive system 22 moves the irradiation optical system 211 and the material nozzle 212 under the control of the control unit 7.
  • the head drive system 22 moves the processing head 21, for example, along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the ⁇ X direction, the ⁇ Y direction, and the ⁇ Z direction.
  • the operation of moving the processing head 21 along at least one of the ⁇ X direction, the ⁇ Y direction, and the ⁇ Z direction may be considered equivalent to the operation of rotating the processing head 21 around at least one of the rotation axes along the X-axis, the Y-axis, and the Z-axis.
  • the head drive system 22 moves the processing head 21, the relative positional relationship between the processing head 21 and the stage 31 and the workpiece W placed on the stage 31 changes. As a result, the relative positional relationship between the stage 31 and the workpiece W and the irradiation optical system 211 equipped in the processing head 21 changes. For this reason, the head drive system 22 may be considered to function as a position change device that can change the relative positional relationship between the stage 31 and the workpiece W and the irradiation optical system 211. Furthermore, when the relative positional relationship between the stage 31 and the workpiece W and the processing head 21 changes, the relative positional relationship between the target irradiation areas EA#1 and EA#2 and the target supply area MA and the workpiece W also changes.
  • the target irradiation areas EA#1 and EA#2 and the target supply area MA move along at least one of the X-axis direction, Y-axis direction, Z-axis direction, ⁇ X direction, ⁇ Y direction, and ⁇ Z direction on the surface of the workpiece W (more specifically, the forming surface MS on which additional processing is performed).
  • the head drive system 22 may be considered to be moving the processing head 21 so that the target irradiation areas EA#1 and EA#2 and the target supply area MA each move on the printing surface MS.
  • the nozzle drive system 23 moves the material nozzle 212.
  • the nozzle drive system 23 does not move the irradiation optical system 211.
  • the nozzle drive system 23 moves the material nozzle 212 relative to the irradiation optical system 211.
  • the nozzle drive system 23 moves the material nozzle 212 separately from the irradiation optical system 211.
  • the nozzle drive system 23 moves the material nozzle 212 independently of the irradiation optical system 211. For this reason, the nozzle drive system 23 differs from the head drive system 22, which moves the irradiation optical system 211 and the material nozzle 212 simultaneously, in that it can move the material nozzle 212 without moving the irradiation optical system 211.
  • the nozzle drive system 23 moves the material nozzle 212, for example, along at least one of the X-axis, Y-axis, Z-axis, ⁇ X-direction, ⁇ Y-direction, and ⁇ Z-direction. In this embodiment, the nozzle drive system 23 moves the material nozzle 212 along the Z-axis.
  • the nozzle drive system 23 moves the material nozzle 212 along the Z axis, the material control point MCP, which is determined based on the material nozzle 212, moves. Therefore, by moving the material nozzle 212, the nozzle drive system 23 may be considered to be controlling the material control point MCP, which is determined based on the material nozzle 212. By moving the material nozzle 212, the nozzle drive system 23 may be considered to be controlling the position of the material control point MCP, which is determined based on the material nozzle 212.
  • the nozzle drive system 23 moves the material nozzle 212 along the Z axis
  • the positional relationship between the printing surface MS and the material control point MCP in the Z axis direction changes. Therefore, it may be considered that the nozzle drive system 23, by moving the material nozzle 212, is changing the positional relationship between the printing surface MS and the material control point MCP (particularly, the positional relationship in the Z axis direction). It may be considered that the nozzle drive system 23, by moving the material nozzle 212, is changing the distance between the printing surface MS and the material control point MCP (particularly, the distance in the Z axis direction).
  • the head drive system 22 moves the machining head 21, the relative positional relationship between the stage 31 and the workpiece W placed on the stage 31, and the material control point MCP, changes even if the nozzle drive system 23 does not move the material nozzle 212. In other words, the positional relationship between the printing surface MS and the material control point MCP changes. This is because the positional relationship between the material control point MCP and the material nozzle 212, which moves as the machining head 21 moves, is fixed. For this reason, the head drive system 22 may be considered to be changing the positional relationship between the printing surface MS and the material control point MCP. For example, when the head drive system 22 moves the machining head 21 along the Z-axis direction, the head drive system 22 may be considered to be changing the distance between the printing surface MS and the material control point MCP (particularly the distance in the Z-axis direction).
  • the nozzle driving system 23 may be considered to change the positional relationship (particularly, the positional relationship in the Z axis direction) between the focus position CP of the processing light EL and the material control point MCP by moving the material nozzle 212.
  • the nozzle driving system 23 may be considered to change the distance (particularly, the distance in the Z axis direction) between the focus position CP of the processing light EL and the material control point MCP by moving the material nozzle 212.
  • the focus position CP of the processing light EL will be described in detail later with reference to FIG. 5.
  • the stage unit 3 includes a stage 31 and a stage driving system 32 .
  • the workpiece W is placed on the stage 31.
  • the workpiece W is placed on a stage placement surface 311, which is one surface of the stage 31 (for example, the upper surface facing the +Z side).
  • the stage 31 is capable of supporting the workpiece W placed on the stage 31.
  • the stage 31 may be capable of holding the workpiece W placed on the stage 31.
  • the stage 31 may be equipped with at least one of a mechanical chuck, an electrostatic chuck, and a vacuum suction chuck, etc., to hold the workpiece W.
  • the stage 31 may not be capable of holding the workpiece W placed on the stage 31. In this case, the workpiece W may be placed on the stage 31 without clamping.
  • the workpiece W may also be attached to a holder, or the holder to which the workpiece W is attached may be placed on the stage 31.
  • the above-mentioned irradiation optical system 211 emits each of the processing lights EL#1 and EL#2 during at least a portion of the period during which the workpiece W is placed on the stage 31.
  • the above-mentioned material nozzle 212 supplies the modeling material M for at least part of the time that the workpiece W is placed on the stage 31.
  • the stage drive system 32 moves the stage 31.
  • the stage drive system 32 moves the stage 31 along at least one of the X-axis, Y-axis, Z-axis, ⁇ X direction, ⁇ Y direction, and ⁇ Z direction.
  • the operation of moving the stage 31 along at least one of the ⁇ X direction, ⁇ Y direction, and ⁇ Z direction may be considered equivalent to the operation of rotating the stage 31 around at least one of the rotation axis along the X-axis (i.e., A-axis), the rotation axis along the Y-axis (i.e., B-axis), and the rotation axis along the Z-axis (i.e., C-axis).
  • the stage drive system 32 moves the stage 31, the relative positional relationship between the processing head 21 and each of the stage 31 and workpiece W changes. As a result, the relative positional relationship between the stage 31 and each of the workpiece W and the irradiation optical system 211 equipped with the processing head 21 changes.
  • the stage drive system 32 like the head drive system 22, may be considered to function as a position change device that can change the relative positional relationship between the stage 31 and each of the workpiece W and the irradiation optical system 211.
  • each of the target irradiation areas EA#1 and EA#2 and the target supply area MA moves along at least one of the X-axis direction, Y-axis direction, Z-axis direction, ⁇ X direction, ⁇ Y direction, and ⁇ Z direction on the surface of the workpiece W (more specifically, the printing surface MS).
  • the stage drive system 32 may be considered to be moving the stage 31 so that the target irradiation areas EA#1 and EA#2 and the target supply area MA each move on the printing surface MS.
  • the stage drive system 32 moves the stage 31, the relative positional relationship between the material control point MCP and the stage 31 and the workpiece W placed on the stage 31 changes, even if the nozzle drive system 23 does not move the material nozzle 212. In other words, the positional relationship between the printing surface MS and the material control point MCP changes. This is because the positional relationship between the material control point MCP and the material nozzle 212 is fixed. For this reason, the stage drive system 32 may be considered to be changing the positional relationship between the printing surface MS and the material control point MCP. For example, when the stage drive system 32 moves the stage 31 along the Z-axis direction, the stage drive system 32 may be considered to be changing the distance between the printing surface MS and the material control point MCP (particularly the distance in the Z-axis direction).
  • the light source 4 emits, for example, at least one of infrared light, visible light, and ultraviolet light as the processing light EL. However, other types of light may be used as the processing light EL.
  • the processing light EL may include multiple pulse lights (i.e., multiple pulse beams).
  • the processing light EL may be laser light.
  • the light source 4 may include a laser light source (for example, a semiconductor laser such as a laser diode (LD: Laser Diode)).
  • LD Laser Diode
  • the laser light source at least one of a fiber laser, a CO2 laser, a YAG laser, and an excimer laser may be used.
  • the processing light EL does not have to be laser light.
  • the light source 4 may include any light source (for example, at least one of an LED (Light Emitting Diode) and a discharge lamp).
  • the processing system SYS includes a plurality of light sources 4 (specifically, light sources 4#1 and 4#2).
  • the characteristics of the processing light EL#1 emitted by the light source 4#1 and the characteristics of the processing light EL#2 emitted by the light source 4#2 may be the same.
  • the wavelength of the processing light EL#1 typically, the peak wavelength, which is the wavelength at which the intensity is maximum in the wavelength band of the processing light EL#1
  • the wavelength of the processing light EL#2 typically, the peak wavelength
  • the wavelength band of the processing light EL#1 (typically, the range of wavelengths at which the intensity is equal to or greater than a certain value) and the wavelength band of the processing light EL#2 may be the same.
  • the intensity of the processing light EL#1 and the intensity of the processing light EL#2 may be the same.
  • the absorptivity of the workpiece W for the processing light EL#1 (or the object whose surface is the printing surface MS, the same applies below) and the absorptivity of the workpiece W for the processing light EL#2 may be the same.
  • the absorptivity of the workpiece W for the peak wavelength of the processing light EL#1 and the absorptivity of the workpiece W for the peak wavelength of the processing light EL#2 may be the same.
  • the characteristics of the processing light EL#1 emitted by the light source 4#1 and the characteristics of the processing light EL#2 emitted by the light source 4#2 may be different.
  • the wavelength (typically, the peak wavelength) of the processing light EL#1 and the wavelength (typically, the peak wavelength) of the processing light EL#2 may be different.
  • the wavelength band of the processing light EL#1 and the wavelength band of the processing light EL#2 may be different.
  • the intensity of the processing light EL#1 and the intensity of the processing light EL#2 may be different.
  • the absorptivity of the workpiece W for the processing light EL#1 and the absorptivity of the workpiece W for the processing light EL#2 may be different.
  • the absorptivity of the workpiece W for the peak wavelength of the processing light EL#1 and the absorptivity of the workpiece W for the peak wavelength of the processing light EL#2 may be different.
  • the processing system SYS is equipped with multiple light sources 4.
  • the processing system SYS does not have to be equipped with multiple light sources 4.
  • the processing system SYS may be equipped with a single light source 4.
  • the processing system SYS may be equipped with a light source that emits (supplies) light of a wide wavelength band or multiple wavelengths as the single light source 4.
  • the processing system SYS may generate processing light EL#1 and processing light EL#2 of different wavelengths by wavelength-dividing the light emitted from this light source.
  • the processing system SYS may perform amplitude division or polarization division of the light emitted from this light source.
  • the gas supply source 5 is a supply source of purge gas for purging the chamber space 63IN inside the housing 6.
  • the purge gas includes an inert gas. Examples of the inert gas include nitrogen gas or argon gas.
  • the gas supply source 5 is connected to the chamber space 63IN via a supply port 62 formed in the partition member 61 of the housing 6 and a supply pipe 51 connecting the gas supply source 5 and the supply port 62.
  • the gas supply source 5 supplies purge gas to the chamber space 63IN via the supply pipe 51 and the supply port 62.
  • the chamber space 63IN becomes a space purged by the purge gas.
  • the purge gas supplied to the chamber space 63IN may be exhausted from an exhaust port (not shown) formed in the partition member 61.
  • the gas supply source 5 may be a cylinder in which an inert gas is stored. When the inert gas is nitrogen gas, the gas supply source 5 may be a nitrogen gas generator that generates nitrogen gas using the air as a raw material.
  • the gas supply source 5 may supply the purge gas to the mixer 12 to which the modeling material M from the material supply source 1 is supplied.
  • the gas supply source 5 may be connected to the mixer 12 via a supply pipe 52 that connects the gas supply source 5 and the mixer 12.
  • the gas supply source 5 supplies the purge gas to the mixer 12 via the supply pipe 52.
  • the modeling material M from the material supply source 1 may be supplied (specifically, pressure-fed) through the supply pipe 11 toward the material nozzle 212 by the purge gas supplied from the gas supply source 5 via the supply pipe 52.
  • the gas supply source 5 may be connected to the material nozzle 212 via the supply pipe 52, the mixer 12, and the supply pipe 11. In that case, the material nozzle 212 supplies the modeling material M together with the purge gas for pressure-fed the modeling material M.
  • the control unit 7 controls the operation of the processing system SYS.
  • the control unit 7 may control the processing unit 2 (e.g., at least one of the processing head 21 and the head drive system 22) provided in the processing system SYS to perform additional processing on the workpiece W.
  • the control unit 7 may control the stage unit 3 (e.g., the stage drive system 32) provided in the processing system SYS to perform additional processing on the workpiece W.
  • the control unit 7 may control the material supply source 1 provided in the processing system SYS to perform additional processing on the workpiece W.
  • the control unit 7 may control the light source 4 provided in the processing system SYS to perform additional processing on the workpiece W.
  • the control unit 7 may control the gas supply source 5 provided in the processing system SYS to perform additional processing on the workpiece W.
  • the control unit 7 may include, for example, a calculation device 71 and a storage device 72.
  • the calculation device 71 may include, for example, at least one of a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit).
  • the storage device 72 may include, for example, a memory.
  • the control unit 7 functions as a device that controls the operation of the machining system SYS by the calculation device 71 executing a computer program.
  • This computer program is a computer program for causing the calculation device 71 to perform (i.e., execute) the operation to be performed by the control unit 7, which will be described later.
  • this computer program is a computer program for causing the control unit 7 to function so as to cause the machining system SYS to perform the operation to be described later.
  • the computer program executed by the calculation device 71 may be recorded in the storage device 72 (i.e., a recording medium) provided in the control unit 7, or may be recorded in any storage medium (e.g., a hard disk or a semiconductor memory) built into the control unit 7 or externally attachable to the control unit 7.
  • the computing device 71 may download the computer program to be executed from a device external to the control unit 7 via a network interface.
  • the storage device 72 may also be referred to as a recording device.
  • the control unit 7 may control the emission mode of the processing light EL by the irradiation optical system 211.
  • the emission mode may include, for example, at least one of the intensity of the processing light EL and the emission timing of the processing light EL.
  • the emission mode may include, for example, at least one of the emission time of the pulsed light, the emission cycle of the pulsed light, and the ratio of the length of the emission time of the pulsed light to the emission cycle of the pulsed light (so-called duty ratio).
  • the control unit 7 may control the movement mode of the processing head 21 by the head drive system 22.
  • the control unit 7 may control the movement mode of the stage 31 by the stage drive system 32.
  • the movement mode may include, for example, at least one of the movement amount, the movement speed, the movement direction, and the movement timing (movement time). Furthermore, the control unit 7 may control the supply mode of the modeling material M by the material nozzle 212.
  • the supply mode may include, for example, at least one of the supply amount (particularly, the supply amount per unit time) and the supply timing (supply time).
  • the control unit 7 does not have to be provided inside the processing system SYS.
  • the control unit 7 may be provided outside the processing system SYS as a server or the like.
  • the control unit 7 and the processing system SYS may be connected by a wired and/or wireless network (or a data bus and/or a communication line).
  • a wired network for example, a network using a serial bus type interface represented by at least one of IEEE1394, RS-232x, RS-422, RS-423, RS-485, and USB may be used.
  • a network using a parallel bus type interface may be used.
  • a network using an interface compliant with Ethernet (registered trademark) represented by at least one of 10BASE-T, 100BASE-TX, and 1000BASE-T may be used.
  • a network using radio waves may be used.
  • An example of a network using radio waves is a network conforming to IEEE802.1x (for example, at least one of a wireless LAN and Bluetooth (registered trademark)).
  • a network using infrared rays may be used as a wireless network.
  • a network using optical communication may be used as a wireless network.
  • the control unit 7 and the machining system SYS may be configured to be able to transmit and receive various information via the network.
  • the control unit 7 may also be able to transmit information such as commands and control parameters to the machining system SYS via the network.
  • the machining system SYS may include a receiving device that receives information such as commands and control parameters from the control unit 7 via the network.
  • the machining system SYS may include a transmitting device (i.e., an output device that outputs information to the control unit 7) that transmits information such as commands and control parameters to the control unit 7 via the network.
  • a first control device that performs part of the processing performed by the control unit 7 may be provided inside the processing system SYS, while a second control device that performs another part of the processing performed by the control unit 7 may be provided outside the processing system SYS.
  • a computation model that can be constructed by machine learning may be implemented in the control unit 7 by the computation device 71 executing a computer program.
  • An example of a computation model that can be constructed by machine learning is, for example, a computation model including a neural network (so-called artificial intelligence (AI)).
  • learning of the computation model may include learning of parameters of the neural network (for example, at least one of weights and biases).
  • the control unit 7 may use the computation model to control the operation of the processing system SYS.
  • the operation of controlling the operation of the processing system SYS may include the operation of controlling the operation of the processing system SYS using the computation model.
  • a computation model that has already been constructed by offline machine learning using teacher data may be implemented in the control unit 7.
  • control unit 7 may be updated on the control unit 7 by online machine learning.
  • control unit 7 may control the operation of the machining system SYS using a computational model implemented in a device external to the control unit 7 (i.e., a device provided outside the machining system SYS) in addition to or instead of the computational model implemented in the control unit 7.
  • the recording medium for recording the computer program executed by the control unit 7 may be at least one of CD-ROM, CD-R, CD-RW, flexible disk, MO, DVD-ROM, DVD-RAM, DVD-R, DVD+R, DVD-RW, DVD+RW, optical disk such as Blu-ray (registered trademark), magnetic medium such as magnetic tape, magneto-optical disk, semiconductor memory such as USB memory, and any other medium capable of storing a program.
  • the recording medium may include a device capable of recording a computer program (for example, a general-purpose device or a dedicated device in which a computer program is implemented in a state in which it can be executed in at least one form such as software and firmware).
  • each process or function included in the computer program may be realized by a logical processing block realized in the control unit 7 by the control unit 7 (i.e., a computer) executing the computer program, or may be realized by a predetermined gate array (hardware such as an FPGA (Field Programmable Gate Array) or an ASIC (Application Specific Integrated Circuit)) provided in the control unit 7, or may be realized in a form that combines logical processing blocks and partial hardware modules that realize some elements of the hardware.
  • Fig. 5 is a cross-sectional view showing the structure of the irradiation optical system 211.
  • the irradiation optical system 211 includes a first optical system 214, a second optical system 215, and a third optical system 216.
  • the first optical system 214 is an optical system into which the processing light EL#1 emitted from the light source 4#1 is incident.
  • the first optical system 214 is an optical system that outputs the processing light EL#1 emitted from the light source 4#1 toward the third optical system 216.
  • the second optical system 215 is an optical system into which the processing light EL#2 emitted from the light source 4#2 is incident.
  • the second optical system 215 is an optical system that outputs the processing light EL#2 emitted from the light source 4#2 toward the third optical system 216.
  • the third optical system 216 is an optical system into which the processing light EL#1 emitted from the first optical system 214 and the processing light EL#2 emitted from the second optical system 215 are incident.
  • the third optical system 216 is an optical system that emits the processing light EL#1 emitted from the first optical system 214 and the processing light EL#2 emitted from the second optical system 215 toward the printing surface MS.
  • the first optical system 214, the second optical system 215, and the third optical system 216 will be described in order.
  • the first optical system 214 includes a collimator lens 2141, a parallel plate 2142, a power meter 2143, and a galvanometer scanner 2144.
  • the galvanometer scanner 2144 includes a focus control optical system 2145 and a galvanometer mirror 2146.
  • the first optical system 214 does not have to include at least one of the collimator lens 2141, the parallel plate 2142, the power meter 2143, and the galvanometer scanner 2144.
  • the galvanometer scanner 2144 does not have to include at least one of the focus control optical system 2145 and the galvanometer mirror 2146.
  • the processing light EL#1 emitted from the light source 4#1 is incident on the collimator lens 2141.
  • the collimator lens 2141 converts the processing light EL#1 incident on the collimator lens 2141 into parallel light. Note that if the processing light EL#1 emitted from the light source 4#1 is parallel light (i.e., the processing light EL#1, which is parallel light, is incident on the first optical system 214), the first optical system 214 does not need to be equipped with the collimator lens 2141.
  • the processing light EL#1 converted into parallel light by the collimator lens 2141 is incident on the parallel plate 2142.
  • the parallel plate 2142 is obliquely disposed with respect to the optical path of the processing light EL#1 incident on the parallel plate 2142. A portion of the processing light EL#1 incident on the parallel plate 2142 passes through the parallel plate 2142. Another portion of the processing light EL#1 that is incident on the parallel plate 2142 is reflected by the parallel plate 2142.
  • the processing light EL#1 that passes through the parallel plate 2142 is incident on the galvanometer scanner 2144. Specifically, the processing light EL#1 that passes through the parallel plate 2142 is incident on the focus control optical system 2145 of the galvanometer scanner 2144.
  • the focus control optical system 2145 is an optical element that can change the focus position CP of the processing light EL#1 (hereinafter referred to as "focus position CP#1").
  • the focus position CP#1 of the processing light EL#1 may mean the focusing position where the processing light EL#1 is focused.
  • the focus position CP#1 of the processing light EL#1 may mean the focusing position where the processing light EL#1 is most convergent in the irradiation direction (traveling direction) of the processing light EL#1.
  • the focus control optical system 2145 can change the focus position CP#1 of the processing light EL#1 along the irradiation direction of the processing light EL#1 emitted from the irradiation optical system 211.
  • the irradiation direction of the processing light EL#1 emitted from the irradiation optical system 211 is a direction in which the Z-axis direction is the main component.
  • the focus control optical system 2145 can change the focus position CP#1 of the processing light EL#1 along the Z-axis direction.
  • the irradiation direction of the processing light EL#1 is a direction that intersects with the printing surface MS (e.g., the surface of the workpiece W or the structure layer SL).
  • the focus control optical system 2145 may be considered to be able to change the focus position CP#1 of the processing light EL#1 along a direction that intersects with the printing surface MS (e.g., the surface of the workpiece W or the structure layer SL).
  • the focus control optical system 2145 may be considered to be capable of changing the focus position CP#1 of the processing light EL#1 along the direction of the optical axis AX of the irradiation optical system 211 (typically the third optical system 216).
  • the irradiation direction of the processing light EL#1 may mean the irradiation direction of the processing light EL#1 emitted from the third optical system 216.
  • the irradiation direction of the processing light EL#1 may be the same as the direction along the optical axis of the third optical system 216.
  • the irradiation direction of the processing light EL#1 may be the same as the direction along the optical axis of the final optical member that is arranged closest to the printing surface MS among the optical members that make up the third optical system 216.
  • the final optical member may be the f ⁇ lens 2162 described later.
  • the final optical member may be the optical member that is arranged closest to the printing surface MS among the multiple optical members that make up the f ⁇ lens 2162.
  • the irradiation optical system 211 does not have to include the third optical system 216. If the irradiation optical system 211 does not have the third optical system 216, the final optical member may be the optical member (Y-scanning mirror 2146MY) that is arranged closest to the printing surface MS among the multiple optical members that make up the first optical system 214. If the irradiation optical system 211 does not have the third optical system 216, the final optical member may be the optical member (Y-scanning mirror 2156MY) that is arranged closest to the printing surface MS among the multiple optical members that make up the second optical system 215.
  • the focus control optical system 2145 may include, for example, multiple optical elements (e.g., multiple lenses) aligned along the irradiation direction of the processing light EL#1. In this case, the focus control optical system 2145 may change the focus position CP#1 of the processing light EL#1 by moving at least one of the multiple optical elements along its optical axis direction.
  • multiple optical elements e.g., multiple lenses
  • the focus control optical system 2145 changes the focus position CP#1 of the processing light EL#1, the positional relationship between the focus position CP#1 of the processing light EL#1 and the printing surface MS changes.
  • the positional relationship between the focus position CP#1 of the processing light EL#1 and the printing surface MS in the irradiation direction of the processing light EL#1 i.e., the Z-axis direction
  • the focus control optical system 2145 may be considered to change the positional relationship (in particular, the positional relationship in the Z-axis direction) between the focus position CP#1 of the processing light EL#1 and the printing surface MS by changing the focus position CP#1 of the processing light EL#1.
  • the focus control optical system 2145 may be considered to change the distance (in particular, the distance in the Z-axis direction) between the focus position CP#1 of the processing light EL#1 and the printing surface MS by changing the focus position CP#1 of the processing light EL#1.
  • the focus control optical system 2145 changes the focus position CP#1 of the processing light EL#1, the positional relationship between the focus position CP#1 of the processing light EL#1 and the material control point MCP changes.
  • the positional relationship between the focus position CP#1 of the processing light EL#1 and the material control point MCP in the irradiation direction of the processing light EL#1 i.e., the Z-axis direction
  • the focus control optical system 2145 may be considered to change the positional relationship (in particular, the positional relationship in the Z-axis direction) between the focus position CP#1 of the processing light EL#1 and the material control point MCP by changing the focus position CP#1 of the processing light EL#1.
  • the focus control optical system 2145 may be considered to change the distance (in particular, the distance in the Z-axis direction) between the focus position CP#1 of the processing light EL#1 and the material control point MCP by changing the focus position CP#1 of the processing light EL#1.
  • FIG. 5 shows an example in which the material control point MCP is located below the printing surface MS, but as described above, the material control point MCP may be located above the printing surface MS or on the printing surface MS.
  • the galvano scanner 2144 may not have the focus control optical system 2145. Even in this case, when the positional relationship between the irradiation optical system 211 and the printing surface MS in the irradiation direction of the processing light EL#1 changes, the positional relationship between the focus position CP#1 of the processing light EL#1 in the irradiation direction of the processing light EL#1 and the printing surface MS changes. Therefore, even if the galvano scanner 2144 does not have the focus control optical system 2145, the processing system SYS can change the positional relationship between the focus position CP#1 of the processing light EL#1 in the irradiation direction of the processing light EL#1 and the printing surface MS.
  • the processing system SYS may change the positional relationship between the focus position CP#1 of the processing light EL#1 in the irradiation direction of the processing light EL#1 and the printing surface MS by moving the processing head 21 along the irradiation direction of the processing light EL#1 using the head drive system 22.
  • the processing system SYS may use the stage drive system 32 to move the stage 31 along the irradiation direction of the processing light EL#1, thereby changing the positional relationship between the focus position CP#1 of the processing light EL#1 and the printing surface MS in the irradiation direction of the processing light EL#1.
  • the processing system SYS may also use the nozzle drive system 23 to move the material nozzle 212 to change the positional relationship between the material control point MCP and the printing surface MS and/or the positional relationship between the material control point MCP and the focus position CP#1.
  • the processing light EL#1 emitted from the focus control optical system 2145 is incident on the galvanometer mirror 2146.
  • the galvanometer mirror 2146 deflects the processing light EL#1, thereby changing the emission direction of the processing light EL#1 emitted from the galvanometer mirror 2146.
  • the galvanometer mirror 2146 may be referred to as a deflection optical system.
  • the position at which the processing light EL#1 is emitted from the processing head 21 is changed.
  • the target irradiation area EA#1 onto which the processing light EL#1 is irradiated on the printing surface MS moves.
  • the galvanometer mirror 2146 may be considered to function as an irradiation position moving device that can move the irradiation position of the processing light EL#1 on the printing surface MS on the printing surface MS.
  • the beam passing area PA#1 through which processing light EL#1 passes moves within a virtual material supply plane PL that intersects with the Z-axis between material nozzle 212 and printing surface MS.
  • the passing position through which processing light EL#1 passes within the material supply plane PL moves.
  • galvanometer mirror 2146 may be considered to function as a passing position moving device that can move the passing position of processing light EL#1 within the material supply plane PL.
  • the galvanometer mirror 2146 includes, for example, an X-scanning mirror 2146MX, an X-scanning motor 2146AX, a Y-scanning mirror 2146MY, and a Y-scanning motor 2146AY.
  • the processing light EL#1 emitted from the focus control optical system 2145 is incident on the X-scanning mirror 2146MX.
  • the X-scanning mirror 2146MX reflects the processing light EL#1 incident on the X-scanning mirror 2146MX toward the Y-scanning mirror 2146MY.
  • the Y-scanning mirror 2146MY reflects the processing light EL#1 incident on the Y-scanning mirror 2146MY toward the third optical system 216.
  • Each of the X-scanning mirror 2146MX and the Y-scanning mirror 2146MY may be referred to as a galvanometer mirror.
  • the X-scan motor 2146AX swings or rotates the X-scanning mirror 2146MX around a rotation axis along the Y-axis.
  • the angle of the X-scanning mirror 2146MX with respect to the optical path of the processing light EL#1 incident on the X-scanning mirror 2146MX is changed.
  • the swing or rotation of the X-scanning mirror 2146MX causes the processing light EL#1 to scan the printing surface MS along the X-axis direction. That is, the target irradiation area EA#1 (i.e., the irradiation position of the processing light EL#1) moves along the X-axis direction on the printing surface MS.
  • the swing or rotation of the X-scanning mirror 2146MX causes the processing light EL#1 to scan the material supply surface PL along the X-axis direction. That is, the beam passing area PA#1 of the processing light EL#1 (i.e., the passing position of the processing light EL#1) moves along the X-axis direction within the material supply surface PL.
  • the Y-scanning motor 2146AY swings or rotates the Y-scanning mirror 2146MY around a rotation axis along the X-axis.
  • the angle of the Y-scanning mirror 2146MY with respect to the optical path of the processing light EL#1 incident on the Y-scanning mirror 2146MY is changed.
  • the swing or rotation of the Y-scanning mirror 2146MY causes the processing light EL#1 to scan the printing surface MS along the Y-axis direction. That is, the target irradiation area EA#1 (i.e., the irradiation position of the processing light EL#1) moves along the Y-axis direction on the printing surface MS.
  • the swing or rotation of the Y-scanning mirror 2146MY causes the processing light EL#1 to scan the material supply surface PL along the Y-axis direction. That is, the beam passing area PA#1 of the processing light EL#1 (i.e., the passing position of the processing light EL#1) moves along the Y-axis direction within the material supply surface PL.
  • the virtual area where the galvanometer mirror 2146 moves the target irradiation area EA#1 on the printing surface MS is called the processing unit area PUA (particularly, the processing unit area PUA#1).
  • the target irradiation area EA#1 may be considered to move on the surface of the printing surface MS that overlaps with the processing unit area PUA#1.
  • the virtual area where the galvanometer mirror 2146 moves the target irradiation area EA#1 on the printing surface MS while the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed (i.e., without changing) is called the processing unit area PUA (particularly, the processing unit area PUA#1).
  • the processing unit area PUA#1 indicates a virtual area (in other words, a range) where the processing head 21 actually performs additional processing using the processing light EL#1 while the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed.
  • the processing unit area PUA#1 indicates a virtual area (in other words, a range) that the processing head 21 actually scans with the processing light EL#1 when the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed.
  • the processing unit area PUA#1 indicates an area (in other words, a range) where the target irradiation area EA#1 actually moves when the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed.
  • the processing unit area PUA#1 may be considered to be a virtual area determined based on the processing head 21 (particularly, the irradiation optical system 211).
  • the processing unit area PUA#1 may be considered to be a virtual area located on the printing surface MS at a position determined based on the processing head 21 (particularly, the irradiation optical system 211).
  • the maximum area where the galvanometer mirror 2146 can move the target irradiation area EA#1 on the printing surface MS when the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed may be referred to as the processing unit area PUA#1.
  • the machining system SYS can use the galvanometer mirror 2146 to move the target irradiation area EA#1 within the machining unit area PUA#1. Therefore, the operation of deflecting the machining light EL#1 using the galvanometer mirror 2146 may be considered equivalent to the operation of moving the target irradiation area EA#1 within the machining unit area PUA#1. Furthermore, as described above, the molten pool MP#1 is formed by irradiating the target irradiation area EA#1 with the machining light EL#1. In this case, the machining system SYS may be considered to use the galvanometer mirror 2146 to move the molten pool MP#1 within the machining unit area PUA#1.
  • the operation of deflecting the machining light EL#1 using the galvanometer mirror 2146 may be considered equivalent to the operation of moving the molten pool MP#1 within the machining unit area PUA#1.
  • the operation of moving the target irradiation area EA#1 within the processing unit area PUA#1 may be considered equivalent to the operation of moving the molten pool MP#1 within the processing unit area PUA#1.
  • the target irradiation area EA#1 moves on the printing surface MS.
  • the relative positional relationship between the galvanometer mirror 2146 and the printing surface MS changes.
  • the processing unit area PUA#1 determined based on the machining head 21 i.e., the processing unit area PUA#1 to which the galvanometer mirror 2146 moves the target irradiation area EA#1 on the printing surface MS
  • the operation of moving at least one of the machining head 21 and the stage 31 may be considered equivalent to the operation of moving the processing unit area PUA#1 relative to the printing surface MS.
  • the galvanometer mirror 2146 may deflect the processing light EL#1 so that the target irradiation area EA#1 moves along a single scanning direction along the printing surface MS within the processing unit area PUA#1.
  • the galvanometer mirror 2146 may deflect the processing light EL#1 so that the target irradiation area EA#1 moves along a single scanning direction within a coordinate system defined based on the processing unit area PUA#1.
  • the galvanometer mirror 2146 may deflect the processing light EL#1 so that the target irradiation area EA#1 moves back and forth periodically along a single scanning direction within the processing unit area PUA#1.
  • the galvanometer mirror 2146 may deflect the processing light EL#1 so that the target irradiation area EA#1 periodically moves back and forth on an axis along a single scanning direction within the processing unit area PUA#1.
  • the shape of the processing unit area PUA#1 along which the target irradiation area EA#1 moves may be a rectangle whose longitudinal direction is the movement direction of the target irradiation area EA#1.
  • the galvanometer mirror 2146 may deflect the processing light EL#1 so that the target irradiation area EA#1 moves along multiple scanning directions along the printing surface MS within the processing unit area PUA#1.
  • the galvanometer mirror 2146 may deflect the processing light EL#1 so that the target irradiation area EA#1 moves along multiple scanning directions within a coordinate system defined based on the processing unit area PUA#1.
  • the galvanometer mirror 2146 may deflect the processing light EL#1 so that the target irradiation area EA#1 moves back and forth periodically along each of the multiple scanning directions within the processing unit area PUA#1. That is, the galvanometer mirror 2146 may deflect the processing light EL#1 so that the target irradiation area EA#1 periodically moves back and forth on an axis along each of the multiple scanning directions within the processing unit area PUA#1.
  • FIG. 7(a) shows an example in which the target irradiation area EA#1 moves back and forth along each of the X-axis direction and the Y-axis direction within the processing unit area PUA#1 so that the movement trajectory of the target irradiation area EA#1 within the processing unit area PUA#1 is circular.
  • the shape of the processing unit area PUA#1 through which the target irradiation area EA#1 moves may be circular.
  • FIG. 7(b) shows an example in which the target irradiation area EA#1 moves back and forth along each of the X-axis direction and the Y-axis direction within the processing unit area PUA#1 so that the movement trajectory of the target irradiation area EA#1 within the processing unit area PUA#1 is mesh-shaped.
  • the shape of the processing unit area PUA#1 through which the target irradiation area EA#1 moves may be rectangular.
  • the operation of periodically moving the target irradiation area EA#1 on the printing surface MS as shown in Figures 6(a), 7(a), and 7(b), respectively, may be referred to as a wobbling operation.
  • the operation of periodically moving (or deflecting) the processing light EL#1 so that the target irradiation area EA#1 moves periodically on the printing surface MS may be referred to as a wobbling operation.
  • the control unit 7 may move at least one of the machining head 21 and the stage 31 so that the machining unit area PUA#1 moves on the printing surface MS during the period when the target irradiation area EA#1 is being moved within the machining unit area PUA#1 using the galvanometer mirror 2146.
  • the control unit 7 may control at least one of the head drive system 22 and the stage drive system 32 so that the machining unit area PUA#1 moves on the printing surface MS during the period when the target irradiation area EA#1 is being moved within the machining unit area PUA#1 using the galvanometer mirror 2146.
  • control unit 7 may control at least one of the head drive system 22 and the stage drive system 32 so that the processing unit area PUA#1 moves along a target movement trajectory MT0 that intersects (orthogonal in some cases) with the movement direction (i.e., the scanning direction) of the target irradiation area EA#1 in the processing unit area PUA#1.
  • control unit 7 may control the galvanometer mirror 2146 so that the target irradiation area EA#1 moves periodically along a scanning direction that intersects (orthogonal in some cases) with the target movement trajectory MT0 of the processing unit area PUA#1 on the printing surface MS.
  • the target irradiation area EA#1 may move along the movement trajectory MT#1 shown in FIG. 6(b). Specifically, the target irradiation area EA#1 may move along a scanning direction that intersects with the target movement trajectory MT0 while moving along the target movement trajectory MT0 of the processing unit area PUA#1. In other words, the target irradiation area EA#1 may move along a wave-shaped (e.g., sinusoidal) movement trajectory MT#1 that oscillates around the target movement trajectory MT0.
  • a wave-shaped e.g., sinusoidal
  • control unit 7 may control at least one of the head drive system 22 and the stage drive system 32 so that the processing unit area PUA #1 moves along a target movement trajectory MT0 extending along at least one of a direction along the movement direction (i.e., scanning direction) of the target irradiation area EA #1 within the processing unit area PUA #1 and a direction intersecting (or, in some cases, perpendicular to) the movement direction of the target irradiation area EA #1 within the processing unit area PUA #1.
  • a target movement trajectory MT0 extending along at least one of a direction along the movement direction (i.e., scanning direction) of the target irradiation area EA #1 within the processing unit area PUA #1 and a direction intersecting (or, in some cases, perpendicular to) the movement direction of the target irradiation area EA #1 within the processing unit area PUA #1.
  • control unit 7 may control the galvanometer mirror 2146 so that the target irradiation area EA #1 moves periodically along each of a scanning direction along the target movement trajectory MT0 of the processing unit area PUA #1 on the printing surface MS and a scanning direction intersecting (or, in some cases, perpendicular to) the target movement trajectory MT0.
  • FIG. 7(c) shows the movement trajectory MT#1 of the target irradiation area EA#1 on the printing surface MS when the processing unit area PUA#1 shown in FIG. 7(a) moves along the target movement trajectory MT0 on the printing surface MS.
  • the processing unit area PUA#1 is an area having a width in a direction intersecting with the movement direction of the processing unit area PUA#1 on the printing surface MS (specifically, the direction in which the target movement trajectory MT0 extends).
  • a molded object having a width along a direction intersecting with the target movement trajectory MT0 of the processing unit area PUA#1 is molded on the printing surface MS.
  • a molded object having a width along the X-axis direction and extending along the Y-axis direction is molded.
  • a molded object having a width along the X-axis direction and extending along the Y-axis direction is molded.
  • the processing unit area PUA#1 is scanned with the processing light EL#1 by the galvanometer mirror 2146. Therefore, compared to when the processing light EL#1 is irradiated onto the printing surface MS without using the galvanometer mirror 2146, the amount of energy transmitted from the processing light EL#1 to the processing unit area PUA#1 is less likely to vary within the processing unit area PUA#1. In other words, it is possible to uniformize the distribution of the amount of energy transmitted from the processing light EL#1 to the processing unit area PUA#1. As a result, the processing system SYS can form an object on the printing surface MS with relatively high printing accuracy.
  • the processing system SYS does not have to irradiate the processing light EL#1 onto the printing surface MS in units of processing unit area PUA#1.
  • the processing system SYS may irradiate the processing light EL#1 onto the printing surface MS without using the galvanometer mirror 2146.
  • the processing system SYS does not necessarily have to perform a wobbling operation.
  • the target irradiation area EA#1 may move on the printing surface MS in conjunction with the movement of at least one of the processing head 21 and the stage 31.
  • the processing system SYS may also non-periodically move the target irradiation area EA#1 on the printing surface MS.
  • An example of the operation of non-periodically moving the target irradiation area EA#1 on the printing surface MS is described in the first modified example of the processing system SYS (see Figures 46 to 52) described later.
  • the processing light EL#1 reflected by the parallel plate 2142 is incident on the power meter 2143.
  • the power meter 2143 can detect the intensity of the processing light EL#1 incident on the power meter 2143.
  • the power meter 2143 may include a light receiving element that detects the processing light EL#1 as light.
  • the power meter 2143 may detect the intensity of the processing light EL#1 by detecting the processing light EL#1 as heat.
  • the power meter 2143 may include a heat detection element that detects the heat of the processing light EL#1.
  • the power meter 2143 detects the intensity of the processing light EL#1 reflected by the parallel plate 2142. Since the parallel plate 2142 is disposed on the optical path of the processing light EL#1 between the light source 4#1 and the galvanometer mirror 2146, the power meter 2143 may be considered to detect the intensity of the processing light EL#1 traveling on the optical path between the light source 4#1 and the galvanometer mirror 2146. In this case, the power meter 2143 can stably detect the intensity of the processing light EL#1 without being affected by the deflection of the processing light EL#1 by the galvanometer mirror 2146.
  • the position of the power meter 2143 is not limited to the example shown in FIG. 5.
  • the power meter 2143 may detect the intensity of the processing light EL#1 traveling along the optical path between the galvanometer mirror 2146 and the printing surface MS.
  • the power meter 2143 may detect the intensity of the processing light EL#1 traveling along the optical path within the galvanometer mirror 2146.
  • the detection result of the power meter 2143 is output to the control unit 7.
  • the control unit 7 may control (in other words, change) the intensity of the processing light EL#1 based on the detection result of the power meter 2143 (i.e., the detection result of the intensity of the processing light EL#1).
  • the control unit 7 may control the intensity of the processing light EL#1 so that the intensity of the processing light EL#1 on the printing surface MS becomes a desired intensity.
  • the control unit 7 may control the intensity of the processing light EL#1 so that the intensity of the processing light EL#1 on the virtual material supply surface PL between the printing surface MS and the material nozzle 212 becomes a desired intensity.
  • control unit 7 may control the light source 4#1 so as to change the intensity of the processing light EL#1 emitted from the light source 4#1 based on the detection result of the power meter 2143.
  • the processing system SYS can appropriately form a model on the printing surface MS by irradiating the printing surface MS with processing light EL#1 having an appropriate intensity.
  • the processing light EL#1 has an intensity capable of melting the modeling material M. Therefore, the processing light EL#1 incident on the power meter 2143 may have an intensity capable of melting the modeling material M. However, when the processing light EL#1 having an intensity capable of melting the modeling material M is incident on the power meter 2143, the power meter 2143 may be damaged by the processing light EL#1. Therefore, the processing light EL#1 having an intensity not high enough to damage the power meter 2143 may be incident on the power meter 2143.
  • the first optical system 214 may weaken the intensity of the processing light EL#1 incident on the power meter 2143 so that the processing light EL#1 having an intensity not high enough to damage the power meter 2143 is incident on the power meter 2143.
  • the reflectance of the parallel plate 2142 for the processing light EL#1 may be set to an appropriate value. Specifically, the lower the reflectance of the parallel plate 2142 for the processing light EL#1, the lower the intensity of the processing light EL#1 incident on the power meter 2143. For this reason, the reflectance of the parallel plate 2142 may be set to a value low enough to realize a state in which the processing light EL#1 having an intensity not high enough to damage the power meter 2143 is incident on the power meter 2143. For example, the reflectance of the parallel plate 2142 may be less than 10%. For example, the reflectance of the parallel plate 2142 may be less than a few percent. Plain glass may be used as the parallel plate 2142 with such low reflectance.
  • the first optical system 214 may cause the processing light EL#1 to be incident on the power meter 2143 via multiple parallel plates 2142.
  • the processing light EL#1 reflected multiple times by each of the multiple parallel plates 2142 may be incident on the power meter 2143.
  • the intensity of the processing light EL#1 reflected multiple times by each of the multiple parallel plates 2142 is weaker than the intensity of the processing light EL#1 reflected once by a single parallel plate 2142. For this reason, there is a high possibility that the processing light EL#1 having an intensity not high enough to damage the power meter 2143 will be incident on the power meter 2143.
  • the surface of the parallel plate 2142 (particularly, at least one of the incident surface on which the processing light EL#1 is incident and the reflecting surface on which the processing light EL#1 is reflected) may be subjected to a desired coating treatment.
  • the surface of the parallel plate 2142 may be subjected to an anti-reflection coating (AR).
  • AR anti-reflection coating
  • the second optical system 215 includes a collimator lens 2151, a parallel plate 2152, a power meter 2153, and a galvanometer scanner 2154.
  • the galvanometer scanner 2154 includes a focus control optical system 2155 and a galvanometer mirror 2156.
  • the second optical system 215 does not have to include at least one of the collimator lens 2151, the parallel plate 2152, the power meter 2153, and the galvanometer scanner 2154.
  • the galvanometer scanner 2154 does not have to include at least one of the focus control optical system 2155 and the galvanometer mirror 2156.
  • the parallel plate 2152 is obliquely disposed with respect to the optical path of the processing light EL#2 incident on the parallel plate 2152. A portion of the processing light EL#2 incident on the parallel plate 2152 passes through the parallel plate 2152. Another portion of the processing light EL#2 that is incident on the parallel plate 2152 is reflected by the parallel plate 2152.
  • the processing light EL#2 that passes through the parallel plate 2152 is incident on the galvanometer scanner 2154. Specifically, the processing light EL#2 that passes through the parallel plate 2152 is incident on the focus control optical system 2155 of the galvanometer scanner 2154.
  • the focus control optical system 2155 is an optical member that can change the focus position CP of the processing light EL#2 (hereinafter referred to as "focus position CP#2").
  • the focus position CP#2 of the processing light EL#2 may mean the focusing position where the processing light EL#2 is focused.
  • the focus position CP#2 of the processing light EL#2 may mean the focusing position where the processing light EL#2 is most convergent in the irradiation direction (travel direction) of the processing light EL#2.
  • the focus control optical system 2155 can change the focus position CP#2 of the processing light EL#2 along the irradiation direction of the processing light EL#2 emitted from the irradiation optical system 211.
  • the irradiation direction of the processing light EL#2 emitted from the irradiation optical system 211 is a direction in which the Z-axis direction is the main component.
  • the focus control optical system 2155 can change the focus position CP#2 of the processing light EL#2 along the Z-axis direction.
  • the irradiation direction of the processing light EL#2 is a direction that intersects with the printing surface MS (e.g., the surface of the workpiece W or the structure layer SL).
  • the focus control optical system 2155 may be considered to be able to change the focus position CP#2 of the processing light EL#2 along a direction that intersects with the printing surface MS (e.g., the surface of the workpiece W or the structure layer SL).
  • the focus control optical system 2155 may be considered to be capable of changing the focus position CP#2 of the processing light EL#2 along the direction of the optical axis AX of the irradiation optical system 211 (typically the third optical system 216).
  • the irradiation direction of the processing light EL#2 may mean the irradiation direction of the processing light EL#2 emitted from the third optical system 216.
  • the irradiation direction of the processing light EL#2 may be the same as the direction along the optical axis of the third optical system 216.
  • the irradiation direction of the processing light EL#2 may be the same as the direction along the optical axis of the final optical member that is arranged closest to the printing surface MS among the optical members that make up the third optical system 216.
  • the final optical member may be the f ⁇ lens 2162 described later.
  • the final optical member may be the optical member that is arranged closest to the printing surface MS among the multiple optical members that make up the f ⁇ lens 2162.
  • the irradiation optical system 211 does not have to include the third optical system 216. If the irradiation optical system 211 does not have the third optical system 216, the final optical element may be the optical element (Y-scanning mirror 2156MY) that is positioned closest to the printing surface MS among the multiple optical elements that make up the second optical system 215.
  • the focus control optical system 2155 may include, for example, multiple optical elements (e.g., multiple lenses) aligned along the irradiation direction of the processing light EL#2. In this case, the focus control optical system 2155 may change the focus position CP#2 of the processing light EL#2 by moving at least one of the multiple optical elements along its optical axis direction.
  • multiple optical elements e.g., multiple lenses
  • the focus control optical system 2155 changes the focus position CP#2 of the processing light EL#2, the positional relationship between the focus position CP#2 of the processing light EL#2 and the printing surface MS changes.
  • the positional relationship between the focus position CP#2 of the processing light EL#2 and the printing surface MS in the irradiation direction of the processing light EL#2 i.e., the Z-axis direction
  • the focus control optical system 2155 may be considered to change the positional relationship between the focus position CP#2 of the processing light EL#2 and the printing surface MS (in particular, the positional relationship in the Z-axis direction) by changing the focus position CP#2 of the processing light EL#2.
  • the focus control optical system 2155 may be considered to change the distance between the focus position CP#2 of the processing light EL#2 and the printing surface MS (in particular, the distance in the Z-axis direction) by changing the focus position CP#2 of the processing light EL#2.
  • the focus control optical system 2155 changes the focus position CP#2 of the processing light EL#2, the positional relationship between the focus position CP#2 of the processing light EL#2 and the material control point MCP changes.
  • the positional relationship between the focus position CP#2 of the processing light EL#2 in the irradiation direction of the processing light EL#2 (i.e., the Z-axis direction) and the material control point MCP changes.
  • the focus control optical system 2155 may be considered to change the positional relationship (in particular, the positional relationship in the Z-axis direction) between the focus position CP#2 of the processing light EL#1 and the material control point MCP by changing the focus position CP#2 of the processing light EL#2.
  • the focus control optical system 2155 may be considered to change the distance (in particular, the distance in the Z-axis direction) between the focus position CP#2 of the processing light EL#1 and the material control point MCP by changing the focus position CP#2 of the processing light EL#2.
  • FIG. 5 shows an example in which the material control point MCP is located below the printing surface MS, but as described above, the material control point MCP may be located above the printing surface MS or on the printing surface MS.
  • the galvano scanner 2154 may not have the focus control optical system 2155. Even in this case, when the positional relationship between the irradiation optical system 211 and the printing surface MS in the irradiation direction of the processing light EL#2 changes, the positional relationship between the focus position CP#2 of the processing light EL#2 in the irradiation direction of the processing light EL#2 and the printing surface MS changes. Therefore, even if the galvano scanner 2154 does not have the focus control optical system 2155, the processing system SYS can change the positional relationship between the focus position CP#2 of the processing light EL#2 in the irradiation direction of the processing light EL#2 and the printing surface MS.
  • the processing system SYS may change the positional relationship between the focus position CP#2 of the processing light EL#2 in the irradiation direction of the processing light EL#2 and the printing surface MS by moving the processing head 21 along the irradiation direction of the processing light EL#2 using the head drive system 22.
  • the processing system SYS may use the stage drive system 32 to move the stage 31 along the irradiation direction of the processing light EL#2, thereby changing the positional relationship between the focus position CP#2 of the processing light EL#2 and the printing surface MS in the irradiation direction of the processing light EL#2.
  • the processing system SYS may also use the nozzle drive system 23 to move the material nozzle 212 to change the positional relationship between the material control point MCP and the printing surface MS and/or the positional relationship between the material control point MCP and the focus position CP#2.
  • the processing light EL#2 emitted from the focus control optical system 2155 is incident on the galvanometer mirror 2156.
  • the galvanometer mirror 2156 deflects the processing light EL#2, thereby changing the emission direction of the processing light EL#2 emitted from the galvanometer mirror 2156.
  • the galvanometer mirror 2156 may be referred to as a deflection optical system.
  • the target irradiation area EA#2 onto which the processing light EL#2 is irradiated on the printing surface MS moves.
  • the irradiation position onto which the processing light EL#2 is irradiated on the printing surface MS moves.
  • the galvanometer mirror 2156 can be considered to function as an irradiation position moving device that can move the irradiation position of the processing light EL#2 on the printing surface MS.
  • the beam passing area PA#2 through which processing light EL#2 passes moves within a virtual material supply plane PL that intersects with the Z-axis between the material nozzle 212 and the printing surface MS.
  • the passing position through which processing light EL#2 passes within the material supply plane PL moves.
  • galvanometer mirror 2156 may be considered to function as a passing position moving device that can move the passing position of processing light EL#2 within the material supply plane PL.
  • the galvanometer mirror 2156 includes, for example, an X-scanning mirror 2156MX, an X-scanning motor 2156AX, a Y-scanning mirror 2156MY, and a Y-scanning motor 2156AY.
  • the processing light EL#2 emitted from the focus control optical system 2155 is incident on the X-scanning mirror 2156MX.
  • the X-scanning mirror 2156MX reflects the processing light EL#2 incident on the X-scanning mirror 2156MX toward the Y-scanning mirror 2156MY.
  • the Y-scanning mirror 2156MY reflects the processing light EL#2 incident on the Y-scanning mirror 2156MY toward the third optical system 216.
  • Each of the X-scanning mirror 2156MX and the Y-scanning mirror 2156MY may be referred to as a galvanometer mirror.
  • the X-scan motor 2156AX swings or rotates the X-scanning mirror 2156MX around a rotation axis along the Y-axis.
  • the angle of the X-scanning mirror 2156MX with respect to the optical path of the processing light EL#2 incident on the X-scanning mirror 2156MX is changed.
  • the swing or rotation of the X-scanning mirror 2156MX causes the processing light EL#2 to scan the printing surface MS along the X-axis direction. That is, the target irradiation area EA#2 (i.e., the irradiation position of the processing light EL#2) moves along the X-axis direction on the printing surface MS.
  • the swing or rotation of the X-scanning mirror 2156MX causes the processing light EL#2 to scan the material supply surface PL along the X-axis direction. That is, the beam passing area PA#2 of the processing light EL#2 (i.e., the passing position of the processing light EL#2) moves along the X-axis direction within the material supply surface PL.
  • the Y-scanning motor 2156AY swings or rotates the Y-scanning mirror 2156MY around a rotation axis along the X-axis.
  • the angle of the Y-scanning mirror 2156MY with respect to the optical path of the processing light EL#2 incident on the Y-scanning mirror 2156MY is changed.
  • the swing or rotation of the Y-scanning mirror 2156MY causes the processing light EL#2 to scan the printing surface MS along the Y-axis direction. That is, the target irradiation area EA#2 (i.e., the irradiation position of the processing light EL#2) moves along the Y-axis direction on the printing surface MS.
  • the swing or rotation of the Y-scanning mirror 2156MY causes the processing light EL#2 to scan the material supply surface PL along the Y-axis direction. That is, the beam passing area PA#2 of the processing light EL#2 (i.e., the passing position of the processing light EL#2) moves along the X-axis direction within the material supply surface PL.
  • the virtual area where the galvanometer mirror 2156 moves the target irradiation area EA#2 on the printing surface MS is called the processing unit area PUA (particularly, the processing unit area PUA#2).
  • the target irradiation area EA#2 may be considered to move on the surface (first surface) of the printing surface MS that overlaps with the processing unit area PUA#2.
  • the virtual area where the galvanometer mirror 2156 moves the target irradiation area EA#2 on the printing surface MS while the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed (i.e., without changing) is called the processing unit area PUA (particularly, the processing unit area PUA#2).
  • the processing unit area PUA#2 indicates a virtual area (in other words, a range) where the processing head 21 actually performs additional processing using the processing light EL#2 while the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed.
  • the processing unit area PUA#2 indicates a virtual area (in other words, a range) that the processing head 21 actually scans with the processing light EL#2 when the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed.
  • the processing unit area PUA#2 indicates an area (in other words, a range) where the target irradiation area EA#2 actually moves when the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed.
  • the processing unit area PUA#2 may be considered to be a virtual area determined based on the processing head 21 (particularly, the irradiation optical system 211).
  • the processing unit area PUA#2 may be considered to be a virtual area located on the printing surface MS at a position determined based on the processing head 21 (particularly, the irradiation optical system 211).
  • the maximum area where the galvanometer mirror 2146 can move the target irradiation area EA#2 on the printing surface MS when the positional relationship between the irradiation optical system 211 and the printing surface MS is fixed may be referred to as the processing unit area PUA#2.
  • the machining system SYS can use the galvanometer mirror 2156 to move the target irradiation area EA#2 within the machining unit area PUA#2. Therefore, the operation of deflecting the machining light EL#2 using the galvanometer mirror 2156 may be considered equivalent to the operation of moving the target irradiation area EA#2 within the machining unit area PUA#2. Furthermore, as described above, the molten pool MP#2 is formed by irradiating the target irradiation area EA#2 with the machining light EL#2. In this case, the machining system SYS may be considered to use the galvanometer mirror 2156 to move the molten pool MP#2 within the machining unit area PUA#2.
  • the operation of deflecting the machining light EL#2 using the galvanometer mirror 2156 may be considered equivalent to the operation of moving the molten pool MP#2 within the machining unit area PUA#2.
  • the operation of moving the target irradiation area EA#2 within the processing unit area PUA#2 may be considered equivalent to the operation of moving the molten pool MP#2 within the processing unit area PUA#2.
  • the target irradiation area EA#2 moves on the printing surface MS.
  • the relative positional relationship between the galvanometer mirror 2146 and the printing surface MS changes.
  • the processing unit area PUA#2 determined based on the machining head 21 i.e., the processing unit area PUA#2 to which the galvanometer mirror 2156 moves the target irradiation area EA#2 on the printing surface MS
  • the operation of moving at least one of the machining head 21 and the stage 31 may be considered equivalent to the operation of moving the processing unit area PUA#2 relative to the printing surface MS.
  • the characteristics of the processing unit area PUA#2 may be the same as the characteristics of the processing unit area PUA#1 described above.
  • the movement mode of the target irradiation area EA#2 in the processing unit area PUA#2 e.g., movement trajectory, etc.
  • the characteristics of the processing unit area PUA#2 and the movement mode of the target irradiation area EA#2 in the processing unit area PUA#2 will be omitted, but an example will be briefly described below. As shown in FIG.
  • the galvanometer mirror 2156 may deflect the processing light EL#2 so that the target irradiation area EA#2 moves along a single scanning direction along the printing surface MS in the processing unit area PUA#2 under the assumption that the processing unit area PUA#2 is stationary (i.e., not moving) on the printing surface MS.
  • the target irradiation area EA#2 on the printing surface MS may move along the movement trajectory MT#2 shown in FIG. 6B (for example, a wave-shaped movement trajectory MT#2 that vibrates around the target movement trajectory MT0).
  • the galvanometer mirror 2156 may deflect the processing light EL#2 so that the target irradiation area EA#2 moves along multiple scanning directions within the processing unit area PUA#2 under the assumption that the processing unit area PUA#2 is stationary (i.e., not moving) on the printing surface MS.
  • the operation of periodically moving the target irradiation area EA#2 on the printing surface MS as shown in Figures 6(a), 7(a), and 7(b), respectively, may be referred to as a wobbling operation.
  • the operation of periodically moving (or deflecting) the processing light EL#2 so as to periodically move the target irradiation area EA#2 on the printing surface MS may be referred to as a wobbling operation.
  • the processing system SYS does not have to periodically move the processing light EL#2 so as to periodically move the target irradiation area EA#2 on the printing surface MS.
  • the processing system SYS does not necessarily have to perform a wobbling operation.
  • the processing unit area PUA#1 and the processing unit area PUA#2 are coincident.
  • the processing unit area PUA#1 is the same as the processing unit area PUA#2.
  • the galvanometer mirror 2156 may be considered to be deflecting the processing light EL#2 so that the target irradiation area EA#2 moves within the processing unit area PUA#1.
  • the galvanometer mirror 2146 may be considered to be deflecting the processing light EL#1 so that the target irradiation area EA#1 moves within the processing unit area PUA#2.
  • the processing unit area PUA#1 and the processing unit area PUA#2 may be partially different.
  • the processing unit area PUA#2 is an area having a width in a direction intersecting with the movement direction of the processing unit area PUA#2 on the printing surface MS (specifically, the direction in which the target movement trajectory MT0 extends).
  • a molded object having a width along a direction intersecting with the target movement trajectory MT0 of the processing unit area PUA#2 is molded on the printing surface MS.
  • a molded object having a width along the X-axis direction and extending along the Y-axis direction is molded.
  • a molded object having a width along the X-axis direction and extending along the Y-axis direction is molded.
  • the processing unit area PUA#2 is scanned with the processing light EL#2 by the galvanometer mirror 2156. Therefore, compared to when the processing light EL#2 is irradiated onto the printing surface MS without using the galvanometer mirror 2156, the amount of energy transmitted from the processing light EL#2 to the processing unit area PUA#2 is less likely to vary within the processing unit area PUA#2. In other words, the amount of energy transmitted from the processing light EL#2 to the processing unit area PUA#2 can be made uniform. As a result, the processing system SYS can form an object on the printing surface MS with relatively high printing accuracy.
  • the processing system SYS does not have to irradiate the processing light EL#2 onto the printing surface MS in units of processing unit area PUA#2.
  • the processing system SYS may irradiate the processing light EL#2 onto the printing surface MS without using the galvanometer mirror 2156.
  • the processing system SYS does not necessarily have to perform a wobbling operation.
  • the target irradiation area EA#2 may move on the printing surface MS in conjunction with the movement of at least one of the processing head 21 and the stage 31.
  • the processing system SYS may also non-periodically move the target irradiation area EA#2 on the printing surface MS.
  • An example of the operation of non-periodically moving the target irradiation area EA#2 on the printing surface MS is described in the first modified example of the processing system SYS (see Figures 46 to 52) described later.
  • the processing light EL#2 reflected by the parallel plate 2152 is incident on the power meter 2153.
  • the power meter 2153 is a specific example of an electrical component used to control the processing light EL#2.
  • the power meter 2153 can detect the intensity of the processing light EL#2 incident on the power meter 2153.
  • the power meter 2153 may include a light receiving element that detects the processing light EL#2 as light.
  • the higher the intensity of the processing light EL#2 the greater the amount of energy generated by the processing light EL#2. As a result, the amount of heat generated by the processing light EL#2 increases.
  • the power meter 2153 may detect the intensity of the processing light EL#2 by detecting the processing light EL#2 as heat.
  • the power meter 2153 may include a heat detection element that detects the heat of the processing light EL#2.
  • the power meter 2153 detects the intensity of the processing light EL#2 reflected by the parallel plate 2152. Since the parallel plate 2152 is disposed on the optical path of the processing light EL#2 between the light source 4#2 and the galvanometer mirror 2156, the power meter 2153 may be considered to detect the intensity of the processing light EL#2 traveling on the optical path between the light source 4#2 and the galvanometer mirror 2156. In this case, the power meter 2153 can stably detect the intensity of the processing light EL#2 without being affected by the deflection of the processing light EL#2 by the galvanometer mirror 2156.
  • the arrangement position of the power meter 2153 is not limited to the example shown in FIG. 5.
  • the power meter 2153 may detect the intensity of the processing light EL#2 traveling along the optical path between the galvanometer mirror 2156 and the printing surface MS.
  • the power meter 2153 may detect the intensity of the processing light EL#2 traveling along the optical path within the galvanometer mirror 2156.
  • the detection result of the power meter 2153 is output to the control unit 7.
  • the control unit 7 may control (in other words, change) the intensity of the processing light EL#2 based on the detection result of the power meter 2153 (i.e., the detection result of the intensity of the processing light EL#2).
  • the control unit 7 may control the intensity of the processing light EL#2 so that the intensity of the processing light EL#2 on the printing surface MS becomes a desired intensity.
  • the control unit 7 may control the intensity of the processing light EL#2 so that the intensity of the processing light EL#2 on the virtual material supply surface PL between the printing surface MS and the material nozzle 212 becomes a desired intensity.
  • control unit 7 may control the light source 4#2 so as to change the intensity of the processing light EL#2 emitted from the light source 4#2 based on the detection result of the power meter 2153.
  • the processing system SYS can appropriately form a model on the printing surface MS by irradiating the printing surface MS with processing light EL#2 having an appropriate intensity.
  • the processing light EL#2 has an intensity capable of melting the modeling material M. Therefore, the processing light EL#2 incident on the power meter 2153 may have an intensity capable of melting the modeling material M. However, when the processing light EL#2 having an intensity capable of melting the modeling material M is incident on the power meter 2153, the power meter 2153 may be damaged by the processing light EL#2. Therefore, the processing light EL#2 having an intensity not high enough to damage the power meter 2153 may be incident on the power meter 2153.
  • the second optical system 215 may weaken the intensity of the processing light EL#2 incident on the power meter 2153 so that the processing light EL#2 having an intensity not high enough to damage the power meter 2153 is incident on the power meter 2153.
  • the reflectance of the parallel plate 2152 for the processing light EL#2 may be set to an appropriate value. Specifically, the lower the reflectance of the parallel plate 2152 for the processing light EL#2, the lower the intensity of the processing light EL#2 incident on the power meter 2153. For this reason, the reflectance of the parallel plate 2152 may be set to a value low enough to realize a state in which the processing light EL#2 having an intensity not high enough to damage the power meter 2153 is incident on the power meter 2153. For example, the reflectance of the parallel plate 2152 may be less than 10%. For example, the reflectance of the parallel plate 2152 may be less than a few percent. Plain glass may be used as the parallel plate 2152 with such low reflectance.
  • the second optical system 215 may cause the processing light EL#2 to be incident on the power meter 2153 via multiple parallel plates 2152.
  • the processing light EL#2 reflected multiple times by each of the multiple parallel plates 2152 may be incident on the power meter 2153.
  • the intensity of the processing light EL#2 reflected multiple times by each of the multiple parallel plates 2152 is weaker than the intensity of the processing light EL#2 reflected once by a single parallel plate 2152. For this reason, there is a high possibility that the processing light EL#2 having an intensity not high enough to damage the power meter 2153 will be incident on the power meter 2153.
  • a desired coating process may be applied to the surface of the parallel plate 2152 (particularly, at least one of the incident surface on which the processing light EL#2 is incident and the reflecting surface on which the processing light EL#2 is reflected).
  • the surface of the parallel plate 2152 may be subjected to an anti-reflection coating process (AR).
  • the third optical system 216 includes a prism mirror 2161 and an f ⁇ lens 2162 .
  • Processing light EL#1 emitted from the first optical system 214 and processing light EL#2 emitted from the second optical system 215 each enter the prism mirror 2161.
  • the prism mirror 2161 reflects processing light EL#1 and EL#2 toward the f ⁇ lens 2162.
  • the prism mirror 2161 reflects processing light EL#1 and EL#2, which enter the prism mirror 2161 from different directions, in approximately the same direction (specifically, toward the f ⁇ lens 2162).
  • the third optical system 216 does not need to be equipped with a prism mirror 2161.
  • the f ⁇ lens 2162 is an optical system for emitting each of the processing lights EL#1 and EL#2 reflected by the prism mirror 2161 toward the printing surface MS.
  • the f ⁇ lens 2162 is an optical system for irradiating each of the processing lights EL#1 and EL#2 reflected by the prism mirror 2161 onto the printing surface MS.
  • the processing lights EL#1 and EL#2 that pass through the f ⁇ lens 2162 are irradiated onto the printing surface MS.
  • the f ⁇ lens 2162 may be an optical element capable of focusing each of the processing lights EL#1 and EL#2 on a focusing surface.
  • the f ⁇ lens 2162 may be referred to as a focusing optical system.
  • the focusing surface of the f ⁇ lens 2162 may be set, for example, on the printing surface MS.
  • the third optical system 216 may be considered to have a focusing optical system whose projection characteristic is f ⁇ .
  • the third optical system 216 may have a focusing optical system whose projection characteristic is different from f ⁇ .
  • the third optical system 216 may have a focusing optical system whose projection characteristic is f ⁇ tan ⁇ .
  • the third optical system 216 may have a focusing optical system whose projection characteristic is f ⁇ sin ⁇ .
  • the optical axis AX of the f ⁇ lens 2162 is an axis along the Z axis. Therefore, the f ⁇ lens 2162 emits each of the processing light EL#1 and EL#2 approximately along the Z axis direction.
  • the irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 may be the same direction.
  • the irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 may both be the Z axis direction.
  • the irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 may both be directions along the optical axis AX of the f ⁇ lens 2162. However, the irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 do not have to be the same direction. The irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 may be different directions from each other.
  • (2) Modeling Operation Performed by the Machining System SYS Next, a modeling operation (additional machining operation for performing additional machining on the workpiece W) performed by the machining system SYS will be described. (2-1) Overview of modeling operations
  • the processing system SYS forms the three-dimensional structure ST by performing additional processing based on the laser build-up welding method. Therefore, the processing system SYS may form the three-dimensional structure ST by performing a forming operation conforming to the laser build-up welding method.
  • the processing system SYS forms a three-dimensional structure ST on the workpiece W based on three-dimensional model data (in other words, three-dimensional model information) of the three-dimensional structure ST to be formed.
  • three-dimensional model data measurement data of a solid object measured by at least one of a measuring device provided in the processing system SYS and a three-dimensional shape measuring device provided separately from the processing system SYS may be used.
  • the processing system SYS sequentially forms, for example, multiple layered partial structures (hereinafter referred to as "structural layers") SL arranged along the Z-axis direction.
  • the processing system SYS sequentially forms multiple structural layers SL one by one based on multiple layer data obtained by slicing the three-dimensional model of the three-dimensional structure ST along the Z-axis direction.
  • a three-dimensional structure ST which is a laminated structure in which multiple structural layers SL are stacked, is formed.
  • the structural layers SL do not necessarily have to be objects having a layered shape.
  • the processing system SYS may perform at least one of a first modeling operation and a second modeling operation as a modeling operation.
  • the first modeling operation and the second modeling operation may differ from each other in that a method for modeling a three-dimensional structure ST by the first modeling operation is different from a method for modeling a three-dimensional structure ST by the second modeling operation.
  • the first modeling operation and the second modeling operation may differ from each other in that a method for modeling each structural layer SL by the first modeling operation is different from a method for modeling each structural layer SL by the second modeling operation.
  • the processing system SYS may form the three-dimensional structure ST by performing the second modeling operation without performing the first modeling operation.
  • the processing system SYS may form each structural layer SL by performing the second modeling operation without performing the first modeling operation.
  • the processing system SYS may form the three-dimensional structure ST by performing the first modeling operation without performing the second modeling operation.
  • the processing system SYS may form each structural layer SL by performing the first modeling operation without performing the second modeling operation.
  • the processing system SYS may form the three-dimensional structure ST by performing both the first and second modeling operations.
  • the processing system SYS may form each structural layer SL by performing both the first and second modeling operations.
  • the first modeling operation and the second modeling operation will be described in order.
  • the first modeling operation is a modeling operation in which a molten pool MP is formed on the printing surface MS by irradiating the printing surface MS with processing light EL, and modeling material M is supplied to the formed molten pool MP to form a model on the printing surface MS.
  • the first modeling operation is a modeling operation in which a molten pool MP is formed on the printing surface MS by irradiating the printing surface MS with processing light EL, and modeling material M is supplied to the formed molten pool MP to form a model on the printing surface MS.
  • the processing system SYS moves at least one of the processing head 21 and the stage 31 so that the processing unit areas PUA#1 and PUA#2 are set in the desired area on the forming surface MS corresponding to the surface of the workpiece W or the surface of the formed structural layer SL.
  • the irradiation optical system 211 irradiates the processing unit areas PUA#1 and PUA#2 with the processing light EL#1 and EL#2, respectively.
  • the focus position CP#1 of the processing light EL#1 and the focus position CP#2 of the processing light EL#2 in the Z-axis direction may coincide with the forming surface MS.
  • the focus position CP#1 of the processing light EL#1 and the focus position CP#2 of the processing light EL#2 in the Z-axis direction may be away from the forming surface MS.
  • molten pools MP#1 and MP#2 are formed on the printing surface MS irradiated with processing light EL#1 and EL#2, respectively.
  • the processing system SYS supplies printing material M from the material nozzle 212 under the control of the control unit 7. As a result, printing material M is supplied to each of the molten pools MP#1 and MP#2.
  • the modeling material M supplied to the molten pool MP#1 is melted by the processing light EL#1 irradiated onto the molten pool MP#1.
  • the modeling material M supplied to the molten pool MP#1 is melted by the molten pool MP#1 formed by the processing light EL#1.
  • the modeling material M may be considered to be melted by the processing light EL#1 that formed the molten pool MP#1.
  • the modeling material M may be considered to be indirectly melted by the processing light EL#1 via the molten pool MP#1 formed by the processing light EL#1.
  • the modeling material M supplied to the molten pool MP#2 is melted by the processing light EL#2 irradiated onto the molten pool MP#2.
  • the modeling material M supplied to the molten pool MP#2 is melted by the molten pool MP#2 formed by the processing light EL#2.
  • the modeling material M may be considered to be melted by the processing light EL#2 that formed the molten pool MP#2.
  • the modeling material M may be considered to be indirectly melted by the processing light EL#2 via the molten pool MP#2 formed by the processing light EL#2.
  • the irradiation optical system 211 uses the galvanometer mirrors 2146 and 2156 to move the target irradiation areas EA#1 and EA#2 within the processing unit areas PUA#1 and PUA#2, respectively. That is, the irradiation optical system 211 uses the galvanometer mirrors 2146 and 2156 to scan the processing unit areas PUA#1 and PUA#2 with the processing light EL#1 and EL#2, respectively.
  • the processing light EL#1 is no longer irradiated to the molten pool MP#1 as the target irradiation area EA#1 moves, the molten modeling material M melted in the molten pool MP#1 is cooled and solidified (i.e., solidified).
  • the processing light EL#2 is no longer irradiated to the molten pool MP#2 as the target irradiation area EA#2 moves, the molten modeling material M melted in the molten pool MP#2 is cooled and solidified (i.e., solidified). Furthermore, as the target irradiation areas EA#1 and EA#2 move, the molten pools MP#1 and MP#2 also move. As a result, as shown in FIG. 8(c), within the processing unit areas PUA#1 and PUA#2 through which the molten pools MP#1 and MP#2 move, a molded object made of solidified molding material M is deposited on the molding surface MS.
  • the object made of the solidified modeling material M in the processing unit area PUA#1 is physically separated from the object made of the solidified modeling material M in the processing unit area PUA#2.
  • the object made of the solidified modeling material M in the processing unit area PUA#1 may be integrated with the object made of the solidified modeling material M in the processing unit area PUA#2.
  • the object made of the solidified modeling material M in the processing unit area PUA#1 may be integrated with the object made of the solidified modeling material M in the processing unit area PUA#2.
  • the processing system SYS may move at least one of the processing head 21 and the stage 31 so that the processing unit areas PUA#1 and PUA#2 move on the printing surface MS.
  • the processing system SYS may move the target irradiation areas EA#1 and EA#2 within the processing unit areas PUA#1 and PUA#2, respectively, and move the processing unit areas PUA#1 and PUA#2 on the printing surface MS in parallel.
  • the processing system SYS may not move the processing head 21 and the stage 31 so that the processing unit areas PUA#1 and PUA#2 do not move on the printing surface MS.
  • the processing head 21 and the stage 31 may be stopped.
  • the processing system SYS may move at least one of the processing head 21 and the stage 31 so that the processing unit areas PUA#1 and PUA#2 are set in another area on the printing surface MS. That is, the machining system SYS may move at least one of the machining head 21 and the stage 31 so that the machining unit areas PUA#1 and PUA#2 move on the printing surface MS after the additional machining (i.e., printing) in the machining unit areas PUA#1 and PUA#2 is completed.
  • the machining system SYS may move at least one of the machining head 21 and the stage 31 so that the area on the printing surface MS where the machining unit areas PUA#1 and PUA#2 have already been set (i.e., the area where the additional machining has already been performed) and the area on the printing surface MS where the machining unit areas PUA#1 and PUA#2 have newly been set (i.e., the area where the additional machining is to be performed) are adjacent to each other.
  • the processing system SYS may move at least one of the processing head 21 and the stage 31 so that the area on the printing surface MS where the processing unit areas PUA#1 and PUA#2 have already been set does not overlap with the area on the printing surface MS where the processing unit areas PUA#1 and PUA#2 have newly been set.
  • the processing system SYS may move at least one of the processing head 21 and the stage 31 so that the area on the printing surface MS where the processing unit areas PUA#1 and PUA#2 have already been set partially overlaps with the area on the printing surface MS where the processing unit areas PUA#1 and PUA#2 have newly been set.
  • the processing system SYS repeats a series of forming processes, including forming a molten pool MP#1 by irradiating the processing unit area PUA#1 with the processing light EL#1, forming a molten pool MP#2 by irradiating the processing unit area PUA#2 with the processing light EL#2, supplying the forming material M to the molten pools MP#1 and MP#2, melting the supplied forming material M, and solidifying the molten forming material M, while moving the processing unit areas PUA#1 and PUA#2 along the target movement trajectory MT0 on the forming surface MS, as shown in FIG. 8(d).
  • a molded object having a width along a direction intersecting the target movement trajectory MT0 is formed on the forming surface MS.
  • a molded object having a width along the X-axis direction and extending along the Y-axis direction is formed.
  • Figures 7(a) and 7(c) respectively, a structure that has a width along the X-axis direction and extends along the Y-axis direction is formed.
  • a structural layer SL is formed on the printing surface MS, which corresponds to a structure that is an aggregate of the melted and then solidified printing material M.
  • a structural layer SL is formed on the printing surface MS, which corresponds to an aggregate of objects printed in a pattern corresponding to the target movement trajectory MT0 of the processing unit areas PUA#1 and PUA#2.
  • a structural layer SL having a shape corresponding to the target movement trajectory MT0 of the processing unit areas PUA#1 and PUA#2 is formed.
  • the processing system SYS does not have to irradiate the target irradiation area EA#1 with the processing light EL#1.
  • the processing system SYS may irradiate the target irradiation area EA#1 with the processing light EL#1 and stop the supply of the forming material M.
  • the processing system SYS may supply the forming material M to the target irradiation area EA#1 and irradiate the target irradiation area EA#1 with the processing light EL#1 of an intensity that does not create a molten pool MP.
  • the target irradiation area EA#2 is set in an area where it is not desired to form an object.
  • the target movement trajectory MT0 of each of the machining unit areas PUA#1 and PUA#2 may be referred to as a machining path (in other words, a tool path).
  • the control unit 7 may move at least one of the machining head 21 and the stage 31 based on path information indicating the target movement trajectory MT0 (i.e., path information indicating the machining path) so that each of the machining unit areas PUA#1 and PUA#2 moves along the target movement trajectory MT0 on the printing surface MS.
  • the processing system SYS repeatedly performs the operation for forming such a structure layer SL based on the three-dimensional model data under the control of the control unit 7. Specifically, first, before performing the operation for forming the structure layer SL, the control unit 7 slices the three-dimensional model data at the lamination pitch to create slice data. The processing system SYS performs the operation for forming the first structure layer SL#1 on the forming surface MS corresponding to the surface of the workpiece W based on the slice data corresponding to the structure layer SL#1. Specifically, the control unit 7 acquires path information for forming the first structure layer SL#1, which is generated based on the slice data corresponding to the structure layer SL#1.
  • the control unit 7 controls the processing unit 2 and the stage unit 3 based on the path information to form the first structure layer SL#1.
  • the structure layer SL#1 is formed on the forming surface MS as shown in FIG. 9(a).
  • the processing system SYS sets the surface (i.e., the upper surface) of the structure layer SL#1 as a new printing surface MS, and then forms the second structure layer SL#2 on the new printing surface MS.
  • the control unit 7 first controls at least one of the head drive system 22 and the stage drive system 32 so that the processing head 21 moves along the Z axis relative to the stage 31.
  • control unit 7 controls at least one of the head drive system 22 and the stage drive system 32 to move the processing head 21 toward the +Z side and/or move the stage 31 toward the -Z side so that the processing unit areas PUA#1 and PUA#2 are set on the surface of the structure layer SL#1 (i.e., the new printing surface MS).
  • the processing system SYS forms the structural layer SL#2 on the structural layer SL#1 based on the slice data corresponding to the structural layer SL#2 in the same manner as the operation for forming the structural layer SL#1.
  • the structural layer SL#2 is formed as shown in FIG. 9B.
  • the same operation is repeated until all the structural layers SL constituting the three-dimensional structure ST to be formed on the workpiece W are formed.
  • the three-dimensional structure ST is formed by a laminated structure in which a plurality of structural layers SL are stacked.
  • the processing system SYS forms a molten pool MP on the printing surface MS by irradiating the printing surface MS with processing light EL.
  • the processing system SYS does not necessarily have to irradiate the printing surface MS with processing light EL in order to form a molten pool MP on the printing surface MS.
  • the processing system SYS does not necessarily have to perform the operation of forming a molten pool MP by irradiating the printing surface MS with processing light EL.
  • the processing system SYS melts the printing material M in the molten pool MP by supplying the printing material M to the molten pool MP formed on the printing surface MS.
  • the processing system SYS melts the printing material M on the printing surface MS.
  • the processing system SYS does not necessarily have to melt the printing material M on the printing surface MS.
  • the processing system SYS melts the modeling material M in the space between the material nozzle 212 and the modeling surface MS before the modeling material M reaches the modeling surface MS.
  • the processing system SYS melts the modeling material M in the space between the material nozzle 212 and the modeling surface MS by irradiating the modeling material M with processing light EL in the space between the material nozzle 212 and the modeling surface MS.
  • the modeling material M molten in the space between the material nozzle 212 and the modeling surface MS is supplied to the modeling surface MS. Therefore, the processing system SYS supplies the modeling material M molten in the space between the material nozzle 212 and the modeling surface MS to the modeling surface MS.
  • the second modeling operation may be an operation in which the modeling material M is melted by irradiating the processing light EL onto the modeling material M in the space between the material nozzle 212 and the modeling surface MS, and the molten modeling material M is supplied to the modeling surface MS to form a model on the modeling surface MS.
  • the processing system SYS In order to form each structural layer SL by performing the second modeling operation, the processing system SYS, under the control of the control unit 7, moves at least one of the processing head 21 and the stage 31 so that molten modeling material M is supplied to a desired area on the modeling surface MS corresponding to the surface of the workpiece W or the surface of the modeled structural layer SL. Then, as shown in FIG. 10(a), the processing system SYS, under the control of the control unit 7, emits processing light EL#1 and EL#2 from the irradiation optical system 211. Furthermore, as shown in FIG. 10(a), the processing system SYS, under the control of the control unit 7, supplies modeling material M from the material nozzle 212.
  • the processing lights EL#1 and EL#2 is irradiated onto the modeling material M in the space between the material nozzle 212 and the modeling surface MS.
  • the virtual material supply surface PL located at the position where at least one of the processing lights EL#1 and EL#2 is irradiated onto the modeling material M in the space between the material nozzle 212 and the modeling surface MS is referred to as the material irradiation surface ES. In this case, as shown in FIG.
  • the processing system SYS may be considered to irradiate the material irradiation surface ES with the processing lights EL#1 and EL#2 and to supply the modeling material M to the material irradiation surface ES.
  • the processing lights EL#1 and EL#2 irradiated onto the material irradiation surface ES pass through the material irradiation surface ES, and the modeling material M supplied to the material irradiation surface ES passes through the material irradiation surface ES.
  • the processing system SYS can be considered to emit the processing lights EL#1 and EL#2 so that they pass through the material irradiation surface ES, and to supply the modeling material M so that the modeling material M passes through the material irradiation surface ES.
  • the forming material M melts on the material irradiation surface ES as shown in FIG. 10(a).
  • the forming material M melted on the material irradiation surface ES is supplied from the material irradiation surface ES to the forming surface MS.
  • the forming material M melted on the material irradiation surface ES adheres to the forming surface MS.
  • the molten pool MP rarely penetrates into the interior of an object having the forming surface MS on its surface (e.g., the workpiece W or the structural layer SL).
  • the amount of penetration of the molten pool MP into the interior of the object having the printing surface MS on its surface is relatively small.
  • the object having the printing surface MS on its surface e.g., the workpiece W or the structural layer SL
  • the molten pool MP will penetrate into the interior of the object having the printing surface MS on its surface (e.g., the workpiece W or the structural layer SL).
  • the amount of penetration of the molten pool MP into the interior of the object having the printing surface MS on its surface e.g., the workpiece W or the structural layer SL
  • the depth of the molten pool MP formed is typically shallower than the depth of the molten pool MP formed in the first printing operation.
  • the modeling material M supplied to the modeling surface MS is cooled and solidified (i.e., coagulated).
  • a model made of the solidified modeling material M is deposited on the modeling surface MS.
  • the processing system SYS repeats a series of modeling processes, including melting the modeling material M on the material irradiation surface ES by irradiating the processing light EL#1 and EL#2, supplying the molten modeling material M to the modeling surface MS, and solidifying the molten modeling material M on the modeling surface MS, while moving the processing head 21 relative to the modeling surface MS, as shown in FIG. 10(c).
  • the processing system SYS repeats a series of modeling processes while moving the processing head 21 relative to the modeling surface MS along at least one of the X-axis direction and the Y-axis direction. In this case, as the processing head 21 moves, a model having a width along a direction intersecting the movement direction of the processing head 21 is modeled on the modeling surface MS.
  • a structure layer SL corresponding to a model that is an aggregate of the melted and then solidified modeling material M is modeled on the modeling surface MS.
  • a structure layer SL corresponding to an aggregate of the models modeled on the modeling surface MS in a pattern according to the movement trajectory of the processing head 21 is modeled.
  • a structural layer SL is formed that has a shape corresponding to the movement trajectory of the processing head 21 in a plan view.
  • a three-dimensional structure ST is formed by a laminated structure in which multiple structural layers SL are stacked.
  • the second modeling operation may be referred to as a modeling operation conforming to the extreme high speed application (EHLA).
  • the second modeling operation may be considered to be a modeling operation conforming to the extreme high speed application (EHLA).
  • the processing system SYS may deflect the processing light EL#1 and EL#2 using the galvanometer mirrors 2146 and 2156, respectively, in the same manner as when the first modeling operation is performed.
  • the processing system SYS may deflect the processing light EL#1 using the galvanometer mirror 2146 to move the beam passing area PA#1 through which the processing light EL#1 passes within the virtual material irradiation surface ES intersecting the Z-axis between the material nozzle 212 and the printing surface MS.
  • FIG. 11 showing the processing light EL#1 passing through the material irradiation surface ES
  • the processing system SYS may deflect the processing light EL#1 using the galvanometer mirror 2146 to move the beam passing area PA#1 through which the processing light EL#1 passes within the virtual material irradiation surface ES intersecting the Z-axis between the material nozzle 212 and the printing surface MS.
  • the processing system SYS may deflect the processing light EL#2 using the galvanometer mirror 2156 to move the beam passing area PA#2 through which the processing light EL#2 passes within the virtual material irradiation surface ES intersecting the Z-axis between the material nozzle 212 and the printing surface MS.
  • the virtual area where the galvanometer mirror 2146 or 2156 moves the beam passing area PA#k (note that k is a variable indicating 1 or 2) on the material irradiation surface ES is referred to as the irradiation unit area MUA (particularly, the irradiation unit area MUA#k).
  • the beam passing area PA#k may be considered to move on a surface of the material irradiation surface ES that overlaps with the irradiation unit area MUA#k.
  • the virtual area where the galvanometer mirror 2146 or 2156 moves the beam passing area PA#k on the material irradiation surface ES while the positional relationship between the irradiation optical system 211 and the material irradiation surface ES is fixed is referred to as the irradiation unit area MUA (particularly, the irradiation unit area MUA#k).
  • the irradiation unit area MUA#k indicates a virtual area (in other words, a range) through which the processing light EL#k emitted from the processing head 21 actually passes while the positional relationship between the irradiation optical system 211 and the material irradiation surface ES is fixed.
  • the irradiation unit area MUA#k indicates an area (in other words, a range) through which the beam passing area PA#k actually moves while the positional relationship between the irradiation optical system 211 and the material irradiation surface ES is fixed. For this reason, the irradiation unit area MUA#k may be considered to be a virtual area determined based on the processing head 21 (particularly, the irradiation optical system 211). In other words, the irradiation unit area MUA#k may be considered to be a virtual area located on the material irradiation surface ES at a position determined based on the processing head 21 (particularly, the irradiation optical system 211).
  • the maximum area over which the galvanometer mirror 2146 or 2156 can move the beam passing area PA#k on the material irradiation surface ES while the positional relationship between the irradiation optical system 211 and the material irradiation surface ES is fixed may be referred to as the irradiation unit area MUA#k.
  • the processing system SYS can move the beam passing area PA#k within the irradiation unit area MUA#k using the galvanometer mirror 2146 or 2156. Therefore, the operation of deflecting the processing light EL#k using the galvanometer mirror 2146 or 2156 may be considered equivalent to the operation of moving the beam passing area PA#k within the irradiation unit area MUA#k.
  • the beam passing area PA#k moves on the material irradiation surface ES.
  • the relative positional relationship between the galvanometer mirrors 2146 and 2156 and the material irradiation surface ES changes.
  • the irradiation unit area MUA#k determined based on the machining head 21 i.e., the irradiation unit area MUA#k where the galvanometer mirror 2146 or 2156 moves the beam passing area PA#k on the material irradiation surface ES
  • the operation of moving at least one of the machining head 21 and the stage 31 may be considered equivalent to the operation of moving the irradiation unit area MUA#k relative to the material irradiation surface ES.
  • the characteristics of the irradiation unit area MUA#k may be the same as the characteristics of the processing unit area PUA#k described above.
  • the movement pattern (e.g., movement trajectory) of the beam passing area PA#k within the irradiation unit area MUA#k may be the same as the movement pattern of the target irradiation area EA#k within the processing unit area PUA#k described above.
  • the galvanometer mirror 2146 or 2156 may deflect the processing light EL#k so that the beam passing area PA#k moves along a single scanning direction along the material irradiation surface ES within the irradiation unit area MUA#k.
  • the beam passing area PA#k may move along the movement trajectory MT#k shown in Fig.
  • the galvanometer mirror 2146 or 2156 may deflect the processing light EL#k so that the beam passing area PA#k moves along multiple scanning directions within the irradiation unit area MUA#k under the assumption that the irradiation unit area MUA#k is stationary (i.e., not moving) on the material irradiation surface ES.
  • the beam passing area PA#k may move along the movement trajectory MT#k shown in Figure 12(e) on the material irradiation surface ES.
  • the material nozzle 212 may supply the modeling material M to the irradiation unit area MUA.
  • the material nozzle 212 may supply the modeling material M to the irradiation unit area MUA so that the entire material supply area MSA is included in the irradiation unit area MUA, as shown in FIG. 13A, which is a plan view showing the relationship between the material supply area MSA to which the modeling material M is supplied within the irradiation unit area MUA and the irradiation unit area MUA.
  • the material nozzle 212 may supply the modeling material M to the irradiation unit area MUA so that a part of the irradiation unit area MUA is included in the material supply area MSA, while another part of the irradiation unit area MUA is not included in the material supply area MSA.
  • the material nozzle 212 may supply the modeling material M to the irradiation unit area MUA so that a part of the material supply area MSA is included in the irradiation unit area MUA, while another part of the material supply area MSA is not included in the irradiation unit area MUA, as shown in FIG. 13B, which is a plan view showing the relationship between the material supply area MSA and the irradiation unit area MUA.
  • the material nozzle 212 may supply the modeling material M to the irradiation unit area MUA such that a part of the irradiation unit area MUA is included in the material supply area MSA, while another part of the irradiation unit area MUA is not included in the material supply area MSA.
  • the material nozzle 212 may supply the modeling material M to the irradiation unit area MUA such that the entire irradiation unit area MUA is included in the material supply area MSA, as shown in Fig. 13(c), which is a plan view showing the relationship between the material supply area MSA and the irradiation unit area MUA.
  • the material nozzle 212 may supply the modeling material M to the irradiation unit area MUA such that a part of the material supply area MSA is included in the irradiation unit area MUA, while another part of the material supply area MSA is not included in the irradiation unit area MUA.
  • the control unit 7 may switch the processing mode of the processing system SYS (mainly, the processing unit 2) between a first mode in which the processing unit 2 performs a first modeling operation and a second mode in which the processing unit 2 performs a second modeling operation.
  • the control unit 7 may set the processing mode of the processing system SYS (mainly, the processing unit 2) to either the first mode or the second mode.
  • the processing unit 2 may perform a first modeling operation.
  • the processing unit 2 may model at least a part of the three-dimensional structure ST by performing the first modeling operation.
  • the processing unit 2 may perform a second modeling operation.
  • the processing unit 2 may model at least a part of the three-dimensional structure ST by performing the second modeling operation.
  • the control unit 7 may control at least one of the position of the material control point MCP and the focus position CP of the processing light EL.
  • the control unit 7 may set the processing mode of the processing system SYS to the first mode by controlling the position of the material control point MCP so that the position of the material control point MCP is located at a first position suitable for performing a first modeling operation.
  • the control unit 7 may set the processing mode of the processing system SYS to the second mode by controlling the position of the material control point MCP so that the position of the material control point MCP is located at a second position suitable for performing a second modeling operation.
  • control unit 7 may set the processing mode of the processing system SYS to the first mode by controlling the focus position CP so that the focus position CP is located at a third position suitable for performing a first modeling operation.
  • control unit 7 may set the processing mode of the processing system SYS to the second mode by controlling the focus position CP so that the focus position CP is located at a fourth position suitable for performing the second modeling operation.
  • the third position and the fourth position may be rephrased as the first focus position and the second focus position, respectively.
  • Fig. 14(a) is a cross-sectional view showing an example of the processing head 21 performing the first modeling operation
  • Fig. 14(b) is a cross-sectional view showing an example of the processing head 21 performing the second modeling operation.
  • the control unit 7 may perform a first mode setting operation to set the processing mode of the processing system SYS to the first mode by controlling the focus position CP of the processing light EL so that the focus position CP of the processing light EL is located on the printing surface MS or in its vicinity.
  • Fig. 14(a) shows an example in which the focus position CP of the processing light EL is located on the printing surface MS, but the focus position CP of the processing light EL may be located at a position away from the printing surface MS along the Z-axis direction.
  • the processing system SYS can appropriately form a molten pool MP on the printing surface MS by irradiating the printing surface MS with processing light EL of a relatively high intensity.
  • the control unit 7 may perform a second mode setting operation to set the processing mode of the processing system SYS to the second mode by controlling the focus position CP of the processing light EL so that the focus position CP of the processing light EL is located in the space between the material nozzle 212 and the printing surface MS.
  • the intensity of the processing light EL used to perform the second printing operation is likely to be maximum in the space between the material nozzle 212 and the printing surface MS. Therefore, the processing system SYS can appropriately melt the printing material M in the space between the material nozzle 212 and the printing surface MS by irradiating the printing material M with relatively high intensity processing light EL in the space between the material nozzle 212 and the printing surface MS.
  • the control unit 7 may perform a third mode setting operation to switch the processing mode of the processing system SYS by controlling the focus position CP of the processing light EL to control the distance D1 between the focus position CP of the processing light EL and the printing surface MS.
  • the control unit 7 may perform a third mode setting operation to switch the processing mode of the processing system SYS by controlling the focus position CP of the processing light EL to control the distance D1 in the Z-axis direction between the focus position CP of the processing light EL and the printing surface MS.
  • the control unit 7 may switch the processing mode of the processing system SYS by controlling the focus position CP of the processing light EL to satisfy the first distance condition that "the distance D1 between the focus position CP of the processing light EL and the printing surface MS when performing the first printing operation is different from the distance D1 between the focus position CP of the processing light EL and the printing surface MS when performing the second printing operation.”
  • the control unit 7 may switch the processing mode of the processing system SYS by controlling the focus position CP of the processing light EL to satisfy the first distance condition that "the distance D1 between the focus position CP of the processing light EL and the printing surface MS when performing the first printing operation is shorter than the distance D1 between the focus position CP of the processing light EL and the printing surface MS when performing the second printing operation.”
  • the focus position CP of the processing light EL is set on the printing surface MS, so the distance D1 is zero, but the distance D1 does not have to be zero.
  • control unit 7 may set the processing mode of the processing system SYS to the first mode by controlling the focus position CP so that the distance D1 between the focus position CP of the processing light EL and the printing surface MS becomes a first distance D11 suitable for performing a first printing operation.
  • control unit 7 may set the processing mode of the processing system SYS to the second mode by controlling the focus position CP so that the distance D1 between the focus position CP of the processing light EL and the printing surface MS becomes a second distance D12 suitable for performing a second printing operation.
  • the second distance D12 is longer than the first distance D11.
  • the first distance D11 is shorter than the second distance D12.
  • the first distance D11 may be zero or may be longer than zero.
  • the second distance D12 may be longer than zero, but is preferably not zero.
  • Each of the first distance D11 and the second distance D12 may be set based on processing conditions (e.g., at least one of the characteristics of the processing system SYS, the characteristics of the modeling material M, and the characteristics of the workpiece W). Alternatively, each of the first distance D11 and the second distance D12 may be set by a user of the processing system SYS.
  • the intensity of the processing light EL used to perform the first modeling operation is more likely to be maximum on or near the printing surface MS, compared to when the first distance condition is not satisfied. Therefore, the processing system SYS can properly form a molten pool MP on the printing surface MS by irradiating the printing surface MS with processing light EL of relatively high intensity.
  • the intensity of the processing light EL used to perform the second modeling operation is more likely to be maximum at a position away from the printing surface MS (typically, the space between the material nozzle 212 and the printing surface MS), compared to when the first distance condition is not satisfied.
  • the processing system SYS can properly melt the printing material M in the space between the material nozzle 212 and the printing surface MS by irradiating the printing material M with processing light EL of relatively high intensity in the space between the material nozzle 212 and the printing surface MS.
  • the material irradiation surface ES on which the processing light EL is irradiated onto the modeling material M in the second modeling operation may be regarded as a virtual material supply surface PL that is set at the same position as the focus position CP of the processing light EL in the Z-axis direction or in the vicinity of the focus position CP of the processing light EL in the Z-axis direction.
  • the virtual material supply surface PL that is set at the same position as the focus position CP of the processing light EL in the Z-axis direction or in the vicinity of the focus position CP of the processing light EL in the Z-axis direction may be used as the material irradiation surface ES.
  • the control unit 7 may perform a fourth mode setting operation to set the processing mode of the processing system SYS to the first mode by controlling the material control point MCP so that the material control point MCP is located below the printing surface MS.
  • the fourth mode setting operation may be regarded as an operation to set the processing mode of the processing system SYS to the first mode by controlling the material control point MCP so that the material control point MCP is located inside (i.e., inside) the object (e.g., workpiece W or structural layer SL) having the printing surface MS on its surface.
  • the state in which the material control point MCP is located below the printing surface MS may include a state in which the material control point MCP is located inside (i.e., inside) the object (e.g., workpiece W or structural layer SL) having the printing surface MS on its surface.
  • the object e.g., workpiece W or structural layer SL
  • the processing system SYS can properly form a molten pool MP on the printing surface MS and properly supply the printing material M to the molten pool MP.
  • the operation of controlling the material control point MCP so that the material control point MCP is located below the printing surface MS may be considered equivalent to the operation of controlling the material control point MCP so that the printing material M supplied from the material nozzle 212 reaches the printing surface MS before the printing material M supplied from the multiple different material supply directions intersect.
  • the processing system SYS can form a molten pool MP on the printing surface MS. Therefore, even if the material control point MCP is located in the space between the material nozzle 212 and the printing surface MS (i.e., above the printing surface MS), the processing system SYS may perform the first printing operation. For the same reason, even if the material control point MCP is located on the printing surface MS, the processing system SYS may perform the first printing operation. (2-3-5) Fifth mode setting operation
  • the control unit 7 may perform a fifth mode setting operation to set the processing mode of the processing system SYS to the second mode by controlling the material control point MCP so that the material control point MCP is located in the space between the material nozzle 212 and the printing surface MS.
  • the control unit 7 may perform a fifth mode setting operation to set the processing mode of the processing system SYS to the second mode by controlling the material control point MCP so that the material control point MCP is located above the printing surface MS.
  • the processing system SYS can appropriately melt the modeling material M in the space between the material nozzle 212 and the modeling surface MS.
  • the control unit 7 may perform a sixth mode setting operation to switch the machining mode of the machining system SYS by controlling the position of the material control point MCP to control the distance D2 between the material control point MCP and the modeling surface MS.
  • the control unit 7 may perform a sixth mode setting operation to switch the machining mode of the machining system SYS by controlling the position of the material control point MCP to control the distance D2 in the Z-axis direction between the material control point MCP and the modeling surface MS.
  • the control unit 7 may switch the processing mode of the processing system SYS by controlling the position of the material control point MCP so as to satisfy the second distance condition that "the distance D2 between the material control point MCP and the printing surface MS when the first printing operation is performed is different from the distance D2 between the material control point MCP and the printing surface MS when the second printing operation is performed."
  • the control unit 7 may switch the processing mode of the processing system SYS by controlling the position of the material control point MCP so as to satisfy the second distance condition that "the distance D2 between the material control point MCP and the printing surface MS when performing the first printing operation is a negative distance, and the distance D2 between the material control
  • the material control point MCP is located at the same position as the focus position CP of the processing light EL in the Z-axis direction, so that the distance D2 between the material control point MCP and the printing surface MS is the same as the distance D1 between the focus position CP of the processing light EL and the printing surface MS, but the distance D2 may be different from the distance D1.
  • the material control point MCP is more likely to be located below the printing surface MS when the first printing operation is performed, compared to when the second distance condition is not satisfied. Therefore, as explained in the explanation of the fourth mode setting operation, the printing material M is less likely to be irradiated with the processing light EL (and as a result, the printing material M will melt) in the space between the material nozzle 212 and the printing surface MS. Therefore, by irradiating the processing light EL onto the printing surface MS, the processing system SYS can properly form a molten pool MP on the printing surface MS and properly supply printing material M to the molten pool MP formed on the printing surface MS.
  • the material control point MCP is more likely to be located in the space between the material nozzle 212 and the printing surface MS (i.e., located above the printing surface MS) when the second printing operation is performed, compared to when the second distance condition is not satisfied. Therefore, as described in the description of the fifth mode setting operation, the printing material M is more likely to be irradiated with the processing light EL (and as a result, the printing material M is melted) in the space between the material nozzle 212 and the printing surface MS. Therefore, the processing system SYS can appropriately melt the printing material M in the space between the material nozzle 212 and the printing surface MS. (2-3-7) Seventh mode setting operation
  • the control unit 7 may perform a seventh mode setting operation to switch the processing mode of the processing system SYS by controlling at least one of the focus position CP of the processing light EL and the position of the material control point MCP to control the distance D3 between the focus position CP of the processing light EL and the material control point MCP.
  • the control unit 7 may perform a seventh mode setting operation to switch the processing mode of the processing system SYS by controlling at least one of the focus position CP of the processing light EL and the position of the material control point MCP to control the distance D3 in the Z-axis direction between the focus position CP of the processing light EL and the material control point MCP.
  • the control unit 7 may switch the processing mode of the processing system SYS by controlling at least one of the positions of the focus position CP of the processing light EL and the material control point MCP so as to satisfy the third distance condition that "the distance D3 between the focus position CP of the processing light EL and the material control point MCP when performing the first modeling operation is different from the distance D3 between the focus position CP of the processing light EL and the material control point MCP when performing the second modeling operation.”
  • the control unit 7 may switch the processing mode of the processing system SYS by controlling at least one of the positions of the focus position CP of the processing light EL and the material control point MCP so as to satisfy the third distance condition that "the distance D3 between the focus position CP of the processing light EL and the material control point MCP when performing the first modeling operation is longer than the distance D3 between the focus position CP of the processing light EL and the material control point MCP when performing the second modeling operation.”
  • the material control point MCP when performing the first modeling operation is longer than the distance D3 between the focus
  • control unit 7 may set the processing mode of the processing system SYS to the first mode by controlling at least one of the positions of the focus position CP and the material control point MCP so that the distance D3 between the focus position CP of the processing light EL and the material control point MCP becomes a first distance D31 suitable for performing a first modeling operation.
  • control unit 7 may set the processing mode of the processing system SYS to the second mode by controlling at least one of the positions of the focus position CP and the material control point MCP so that the distance D3 between the focus position CP of the processing light EL and the material control point MCP becomes a second distance D32 suitable for performing a second modeling operation.
  • the second distance D32 is shorter than the first distance D31.
  • the first distance D31 is longer than the second distance D32.
  • the second distance D32 may be zero or may be longer than zero.
  • the first distance D31 may be longer than zero, but is preferably not zero.
  • each of the first distance D31 and the second distance D32 may be set based on processing conditions (e.g., at least one of the characteristics of the processing system SYS, the characteristics of the modeling material M, and the characteristics of the workpiece W).
  • processing conditions e.g., at least one of the characteristics of the processing system SYS, the characteristics of the modeling material M, and the characteristics of the workpiece W.
  • each of the first distance D31 and the second distance D32 may be set by a user of the processing system SYS.
  • the material control point MCP is more likely to be located below the printing surface MS when the first printing operation is performed, compared to when the third distance condition is not satisfied. Therefore, as explained in the explanation of the fourth mode setting operation, the printing material M is less likely to be irradiated with the processing light EL (and as a result, the printing material M will melt) in the space between the material nozzle 212 and the printing surface MS. Therefore, by irradiating the processing light EL onto the printing surface MS, the processing system SYS can properly form a molten pool MP on the printing surface MS and properly supply printing material M to the molten pool MP formed on the printing surface MS.
  • the material control point MCP is more likely to be located in the space between the material nozzle 212 and the printing surface MS (i.e., located above the printing surface MS) when the second printing operation is performed, compared to when the third distance condition is not satisfied. Therefore, as explained in the explanation of the fifth mode setting operation, the printing material M is more likely to be irradiated with the processing light EL in the space between the material nozzle 212 and the printing surface MS (and as a result, the printing material M is melted). Therefore, the processing system SYS can appropriately melt the printing material M in the space between the material nozzle 212 and the printing surface MS.
  • the material irradiation surface ES on which the processing light EL is irradiated onto the modeling material M in the second modeling operation may be regarded as a virtual material supply surface PL that is set at the same position as the material control point MCP in the Z-axis direction or in the vicinity of the material control point MCP in the Z-axis direction.
  • the virtual material supply surface PL that is set at the same position as the material control point MCP in the Z-axis direction or in the vicinity of the material control point MCP in the Z-axis direction may be used as the material irradiation surface ES.
  • the control unit 7 may perform an eighth mode setting operation to set the processing mode of the processing system SYS to the second mode by controlling at least one of the focus position CP and the position of the material control point MCP of the processing light EL so that the modeling material M is melted by the processing light EL at the position where the modeling material M supplied from the plurality of different material supply directions intersect.
  • the eighth mode setting operation to set the processing mode of the processing system SYS to the second mode by controlling at least one of the focus position CP and the position of the material control point MCP of the processing light EL so that the modeling material M is melted by the processing light EL at the position where the modeling material M supplied from the plurality of different material supply directions intersect.
  • control unit 7 may perform an eighth mode setting operation to set the processing mode of the processing system SYS to the second mode by controlling at least one of the focus position CP and the position of the material control point MCP of the processing light EL so that the processing light EL is irradiated onto the modeling material M at the position where the modeling material M supplied from the plurality of different material supply directions intersect.
  • control unit 7 may perform an eighth mode setting operation to set the processing mode of the processing system SYS to the second mode by controlling at least one of the focus position CP of the processing light EL and the position of the material control point MCP so that the modeling material M supplied from the first supply port portion 2122 of the material supply port 2121 along the first material supply direction and the modeling material M supplied from the second supply port portion 2123 of the material supply port 2121 along the second material supply direction intersect at the position where the modeling material M is melted.
  • the processing system SYS can appropriately melt the modeling material M in the space between the material nozzle 212 and the modeling surface MS.
  • the material nozzle 212 may be considered to supply the modeling material M from a direction intersecting with the modeling surface MS toward the material supply position MSP on the modeling surface MS, and the irradiation optical system 211 may be considered to melt the modeling material M on the material irradiation surface ES using the processing light EL directed in a direction different from the material supply position MSP.
  • the eighth mode setting operation may be considered to be an operation of setting the processing mode of the processing system SYS to the second mode by controlling at least one of the focus position CP and the position of the material control point MCP of the processing light EL so that the material nozzle 212 supplies the modeling material M from a direction intersecting with the modeling surface MS toward the material supply position MSP on the modeling surface MS, and the irradiation optical system 211 melts the modeling material M on the material irradiation surface ES using the processing light EL directed in a direction different from the material supply position MSP.
  • the material irradiation surface ES may be considered to be a virtual material supply surface PL set at or near the position where the modeling material M supplied from a plurality of different material supply directions intersect.
  • the virtual material supply surface PL set at or near the position where the modeling material M supplied from a plurality of different material supply directions intersect may be used as the material irradiation surface ES.
  • the point where the modeling material M supplied from multiple different material supply directions intersect may be used as the material control point MCP.
  • the material control point MCP may also be a point located on the optical path of the processing light EL.
  • the material control point MCP may be a point located on a virtual axis extending along the optical path of the processing light EL.
  • the material control point MCP may be a point located on the optical axis AX of the irradiation optical system 211 that emits the processing light EL.
  • both the material control point MCP and the optical axis AX may be located within a region determined according to the distribution of the supply amount of the modeling material M in the material irradiation surface ES including the material control point MCP.
  • both the material control point MCP and the optical axis AX may be located within a region of the half width at half maximum (or full width at half maximum) of the distribution of the supply amount of the modeling material M in the material irradiation surface ES including the material control point MCP.
  • the diameter of the third optical system 216 (particularly, the f ⁇ lens 2162) functioning as the objective optical system may be smaller than the half width at half maximum (or full width at half maximum) of the distribution of the supply amount of the modeling material M in the material irradiation surface ES including the material control point MCP.
  • the focus position CP of the processing light EL may be fixed.
  • the focus position CP of the processing light EL when the processing mode of the processing system SYS is set to the first mode may be the same as the focus position CP of the processing light EL when the processing mode of the processing system SYS is set to the second mode.
  • the processing system SYS may switch the processing mode of the processing system SYS by controlling the position of the material control point MCP.
  • the processing system SYS may switch the processing mode of the processing system SYS by controlling the position of the material control point MCP without controlling the focus position CP of the processing light EL.
  • the control unit 7 may control the nozzle drive system 23 to control the position of the material control point MCP. Specifically, as shown in FIG. 15, the control unit 7 may control (typically change) the position of the material control point MCP determined based on the material nozzle 212 by controlling the nozzle drive system 23 to move the material nozzle 212 along the Z-axis direction. For example, as shown in FIG. 15, in a situation where the processing system SYS is performing the first modeling operation (i.e., the processing mode of the processing system SYS is set to the first mode), the control unit 7 may switch the processing mode of the processing system SYS from the first mode to the second mode by moving the material nozzle 212 along the Z-axis direction toward the +Z side. For example, as shown in FIG.
  • control unit 7 may switch the processing mode of the processing system SYS from the second mode to the first mode by moving the material nozzle 212 toward the -Z side along the Z-axis direction.
  • the control unit 7 may control the gas nozzle 217 capable of supplying (typically spraying) gas to the supply path of the modeling material M supplied from the material nozzle 212.
  • the control unit 7 may control (typically change) the position of the material control point MCP corresponding to the point where the modeling material M intersects by controlling the ON/OFF of the gas supply from the gas nozzle 217 to change the material supply direction of the modeling material M from the material nozzle 212.
  • FIG. 16 the control unit 7 may control the gas nozzle 217 capable of supplying (typically spraying) gas to the supply path of the modeling material M supplied from the material nozzle 212.
  • the control unit 7 may control (typically change) the position of the material control point MCP corresponding to the point where the modeling material M intersects by controlling the ON/OFF of the gas supply from the gas nozzle 217 to change the material supply direction of the modeling material M from the material nozzle 212.
  • control unit 7 may control the gas nozzle 217 to supply gas, thereby changing the material supply direction of the modeling material M so that the modeling material M intersects in the space between the material nozzle 212 and the modeling surface MS, and as a result, the processing mode of the processing system SYS may be switched from the first mode to the second mode.
  • the control unit 7 may control the gas nozzle 217 to stop the supply of gas, thereby changing the material supply direction of the modeling material M so that the modeling material M intersects in the space between the material nozzle 212 and the modeling surface MS, and as a result, the processing mode of the processing system SYS may be switched from the first mode to the second mode.
  • the processing mode of the processing system SYS may be switched from the first mode to the second mode.
  • control unit 7 may control the gas nozzle 217 to stop the supply of gas, thereby returning the material supply direction of the modeling material M to its original state, and as a result, the processing mode of the processing system SYS may be switched from the second mode to the first mode.
  • control unit 7 may control the gas nozzle 217 to supply gas, thereby returning the material supply direction of the modeling material M to the original state, and as a result, the processing mode of the processing system SYS may be switched from the second mode to the first mode.
  • control unit 7 may change the material supply direction of the modeling material M from the material nozzle 212 by controlling the gas supply direction from the gas nozzle 217 in addition to or instead of controlling the ON/OFF of the gas supply from the gas nozzle 217. That is, the control unit 7 may control (typically change) the position of the material control point MCP corresponding to the point where the modeling material M intersects by controlling the gas supply direction from the gas nozzle 217 in addition to or instead of controlling the ON/OFF of the gas supply from the gas nozzle 217.
  • the control unit 7 may change the material supply direction of the modeling material M by controlling the gas nozzle 217 to change the gas supply direction, and as a result, switch the processing mode of the processing system SYS from the second mode to the first mode.
  • the control unit 7 may change the material supply direction of the modeling material M by controlling the gas nozzle 217 to change the gas supply direction, and as a result, the processing mode of the processing system SYS may be switched from the first mode to the second mode.
  • control unit 7 may change the material supply direction of the modeling material M from the material nozzle 212 by controlling the amount of gas supplied from the gas nozzle 217, in addition to or instead of controlling at least one of the ON/OFF of the gas supply from the gas nozzle 217 and the supply direction of the gas from the gas nozzle 217.
  • control unit 7 may control (typically change) the position of the material control point MCP, which corresponds to the point where the modeling material M intersects, by controlling the amount of gas supplied from the gas nozzle 217, in addition to or instead of controlling at least one of the ON/OFF of the gas supply from the gas nozzle 217 and the supply direction of the gas from the gas nozzle 217.
  • the control unit 7 may control the gas nozzle 217 to change (e.g., increase or decrease) the amount of gas supplied, thereby changing the material supply direction of the modeling material M, and as a result, switch the processing mode of the processing system SYS from the second mode to the first mode.
  • the control unit 7 may control the gas nozzle 217 to change (e.g., increase or decrease) the amount of gas supplied, thereby changing the material supply direction of the modeling material M, and as a result, switch the processing mode of the processing system SYS from the first mode to the second mode.
  • the control unit 7 may control at least one of the focus control optical systems 2145 and 2156 included in the irradiation optical system 211.
  • the control unit 7 may control the focus position CP in accordance with the control of the material control point MCP by controlling at least one of the focus control optical systems 2145 and 2156 in parallel or before or after the control of the material control point MCP. (2-3-10) Utilization of position information regarding the position of the material control point MCP, the focus position CP of the processing light EL, and the position of the modeling surface MS
  • the processing mode of the processing system SYS can be switched depending on at least one of the focus position CP of the processing light EL, the position of the material control point MCP, and the position of the printing surface MS. Therefore, the focus position CP of the processing light EL, the position of the material control point MCP, and the position of the printing surface MS may be considered to be index values that affect the processing mode of the processing system SYS.
  • the control unit 7 may collect position information regarding at least one of the focus position CP of the processing light EL, the position of the material control point MCP, and the position of the printing surface MS as log information.
  • the processing system SYS may be equipped with a sensor that detects position information regarding at least one of the focus position CP of the processing light EL, the position of the material control point MCP, and the position of the printing surface MS.
  • the collected log information may be used to retroactively verify the operation of the processing system SYS.
  • the collected log information may be used to retroactively verify the quality of the three-dimensional structure ST formed by the processing system SYS.
  • the processing system SYS may form the three-dimensional structure ST by performing both the first and second modeling operations. Specifically, the processing system SYS may form a part of the three-dimensional structure ST by performing the first modeling operation, and form another part of the three-dimensional structure ST by performing the second modeling operation. That is, the processing system SYS may form a first part of the three-dimensional structure ST by performing the first modeling operation, and form a second part of the three-dimensional structure ST different from the first part by performing the second modeling operation. In particular, the processing system SYS may form a part of the three-dimensional structure ST by performing the first modeling operation during a first period, and form the other part of the three-dimensional structure ST by performing the second modeling operation during a second period different from the first period.
  • the processing system SYS may form a first portion of the three-dimensional structure ST by performing a first modeling operation during a first period, and form a second portion of the three-dimensional structure ST by performing a second modeling operation during a second period different from the first period.
  • control unit 7 may switch the processing mode of the processing system SYS so that the processing unit 2 performing the first modeling operation models a part (first part) of the three-dimensional structure ST, and the processing unit 2 performing the second modeling operation models another part (second part) of the three-dimensional structure ST.
  • a specific example of an operation for forming a three-dimensional structure ST by performing both the first and second forming operations will be described.
  • the processing system SYS may perform both the first and second modeling operations to form each of the multiple structural layers SL that constitute the three-dimensional structure ST. Therefore, in the first specific example, the control unit 7 may switch the processing mode of the processing system SYS between the first mode and the second mode during the period in which the processing system SYS forms each structural layer SL.
  • the processing system SYS may perform a first modeling operation to model an exterior wall object SL-1 that corresponds to a part of the structural layer SL.
  • the exterior wall object SL-1 may be a model having a surface that is exposed to the outside when the three-dimensional structure ST is completed.
  • the exterior wall object SL-1 may be a model having a surface that becomes the outer surface of the three-dimensional structure ST.
  • the exterior wall object SL-1 may be a model having a surface that faces a direction that intersects with the stacking direction of the structural layer SL (for example, a direction that intersects with the Z axis).
  • the exterior wall object SL-1 may include a model having a predetermined width along a direction that intersects with the stacking direction of the structural layer SL.
  • FIG. 17(a) and FIG. 17(b) show an example in which the exterior wall object SL-1 is a frame-shaped object.
  • the processing system SYS may perform a second modeling operation to model a filled object SL-2 corresponding to a remaining portion of the structural layer SL.
  • the filled object SL-2 may include a model that is not exposed to the outside when the three-dimensional structure ST is completed.
  • the filled object SL-2 may include a model that is at least partially surrounded by the outer wall object SL-1.
  • the filled object SL-2 may include a model that is at least partially surrounded by the outer wall object SL-1 in a plane that intersects with the stacking direction of the structural layer SL.
  • the filled object SL-2 may include a model that is located inside the outer wall object SL-1.
  • the filled object SL-2 may include a model that is located inside the outer wall object SL-1 in a plane that intersects with the stacking direction of the structural layer SL.
  • the filling object SL-2 may include an object that fills the gap G1 of the exterior wall object SL-1 (i.e., the space surrounded by the exterior wall object SL-1).
  • the exterior wall object SL-1 may include an object that includes the gap G1 surrounded by the exterior wall object SL-1.
  • Figures 17(a) and 17(c) show an example in which the filling object SL-2 is an object with a rectangular outer shape that fills the three-dimensional gap G1 with a rectangular cross section.
  • the processing system SYS may perform a first modeling operation to form an exterior wall object SL-1, and then perform a second modeling operation to form a filled object SL-2.
  • the processing system SYS may perform a second modeling operation to form a filled object SL-2, and then perform a first modeling operation to form the exterior wall object SL-1.
  • the processing system SYS may alternately repeat an operation of forming a part of the exterior wall object SL-1 by performing the first modeling operation and an operation of forming a part of the filled object SL-2 by performing the second modeling operation.
  • the modeling accuracy by the first modeling operation is usually higher than that by the second modeling operation.
  • the reason why the modeling accuracy by the first modeling operation is higher than that by the second modeling operation will be explained below.
  • the first modeling operation is an operation of forming a molten pool MP on the modeling surface MS by irradiating the modeling surface MS with the processing light EL, and supplying the modeling material M to the formed molten pool MP, thereby forming a model.
  • the modeling accuracy by the first modeling operation depends on the accuracy of the position where the molten pool MP is formed.
  • the accuracy of the position where the molten pool MP is formed depends on the accuracy of the irradiation position of the processing light EL on the modeling surface MS.
  • the irradiation position of the processing light EL on the modeling surface MS can be controlled with relatively high accuracy by the galvanometer mirror 2146 or 2156.
  • the second modeling operation is an operation of forming a model by supplying the modeling material M melted in the space between the material nozzle 212 and the modeling surface MS to the modeling surface MS.
  • the modeling accuracy of the second modeling operation depends on the accuracy of the supply position of the molten modeling material M on the modeling surface MS.
  • the supply position of the molten modeling material M on the modeling surface MS cannot necessarily be controlled with high accuracy compared to the irradiation position of the processing light EL on the modeling surface MS, which affects the modeling accuracy of the first modeling operation described above. This is because the trajectory of the molten modeling material M falling through the space between the material nozzle 212 and the modeling surface MS cannot necessarily be controlled with high accuracy. For this reason, the modeling accuracy of the first modeling operation is usually higher than the modeling accuracy of the second modeling operation.
  • the processing system SYS can form the exterior wall object SL-1, which forms the outer surface of the three-dimensional structure ST, with higher forming accuracy than when the exterior wall object SL-1 is formed by performing the second forming operation. Therefore, the processing system SYS can form a three-dimensional structure ST with relatively little dimensional error in the outer shape.
  • the modeling speed of the second modeling operation is faster than the modeling speed of the first modeling operation. Therefore, when the filled object SL-2 is formed by performing the second modeling operation, the time required to form the filled object SL-2 is shorter than when the filled object SL-2 is formed by performing the first modeling operation. On the other hand, because the filled object SL-2 is not exposed to the outside of the three-dimensional structure ST, even when the filled object SL-2 is formed by performing the second modeling operation, the dimensional accuracy of the external shape of the three-dimensional structure ST is unlikely to deteriorate.
  • the processing system SYS can form a three-dimensional structure ST having a relatively small dimensional error of the outer shape in a relatively short time.
  • the processing system SYS can achieve both the effect of improving the modeling accuracy (for example, improving the dimensional error of the outer shape of the three-dimensional structure ST) and the effect of shortening the time required to form the three-dimensional structure ST (i.e., improving the throughput).
  • the processing system SYS may perform both the first and second modeling operations to form each of the multiple structural layers SL that constitute the three-dimensional structure ST. Therefore, in the second specific example, as in the first specific example, the control unit 7 may switch the processing mode of the processing system SYS between the first mode and the second mode during the period in which the processing system SYS forms the structural layer SL#1.
  • the processing system SYS may perform both the first and second modeling operations to model the first structural layer SL#1 of the multiple structural layers SL constituting the three-dimensional structure ST.
  • the processing system SYS may perform both the first and second modeling operations to model any structural layer SL constituting the three-dimensional structure ST.
  • the processing system SYS performs both the first and second modeling operations to model the first structural layer SL#1.
  • the processing system SYS performs the first modeling operation to model the first structural layer portion SL#1-1, which is a part of the structural layer SL#1, and performs the second modeling operation to model the second structural layer portion SL#1-1, which is another part of the structural layer SL#1.
  • An example of a structural layer SL#1 formed in the second embodiment is shown in Figures 18(a) and 18(b).
  • the processing system SYS may perform the first modeling operation to form the first structural layer portion SL#1-1.
  • the first structural layer portion SL#1-1 may be a model that is integrated (i.e., bonded) with the workpiece W.
  • the first structural layer portion SL#1-1 may be a model that is bonded with the workpiece W by a relatively strong bonding force.
  • the processing system SYS performing the first modeling operation irradiates the processing light EL onto the modeling surface MS corresponding to the surface of the workpiece W, and therefore a part of the workpiece W melts due to the irradiation of the processing light EL. Therefore, the processing system SYS can appropriately form the first structural layer portion SL#1-1 that is integrated with the workpiece W or bonded with the workpiece W by supplying the modeling material M of the molten pool MP formed by melting a part of the workpiece W.
  • the processing system SYS may perform the second modeling operation to form the second structural layer portion SL#1-2.
  • the second structural layer portion SL#1-2 may be a model that is not integrated with (i.e., not bonded to) the workpiece W.
  • the second structural layer portion SL#1-2 may be a model that is bonded to the workpiece W with a relatively weak bonding force.
  • the bonding force between the second structural layer portion SL#1-2 and the workpiece W may be weaker than the bonding force between the first structural layer portion SL#1-1 and the workpiece W.
  • the processing system SYS performing the second modeling operation supplies the molten modeling material M to the modeling surface MS corresponding to the surface of the workpiece W. For this reason, a portion of the workpiece W is rarely directly melted by the processing light EL. Therefore, by supplying molten modeling material M to the modeling surface MS, the processing system SYS can properly model the second structural layer portion SL#1-2 that is not integrated with the workpiece W or is bonded to the workpiece W with a relatively weak bonding force.
  • the processing system SYS may form a plurality of first structural layer portions SL#1-1.
  • the processing system SYS may form a plurality of first structural layer portions SL#1-1 that are discretely distributed on the printing surface MS.
  • the processing system SYS may form a second structural layer portion SL#1-2 that connects the plurality of first structural layer portions SL#1-1.
  • the processing system SYS may form a structural layer SL#1 in which the plurality of first structural layer portions SL#1-1 and the second structural layer portion SL#1-2 are integrated.
  • the structural layer SL#1 is fixed to the workpiece W via the plurality of first structural layer portions SL#1-1, the object formed on the workpiece W (for example, at least one structural layer SL including the structural layer SL#1) will not move unintentionally during the period in which the three-dimensional structure ST is formed.
  • control unit 7 may switch the processing mode of the processing system SYS between the first mode and the second mode during a period in which the processing light EL is deflected using at least one of the galvanometer mirrors 2146 and 2156.
  • control unit 7 may set the processing mode of the processing system SYS to the second mode, and control the processing unit 2 to form the second structural layer portion SL#1-2 while deflecting the processing light EL using at least one of the galvanometer mirrors 2146 and 2156.
  • the control unit 7 may control the processing unit 2 to switch the processing mode of the processing system SYS from the second mode to the first mode at that timing and form the first structural layer portion SL#1-1.
  • the control unit 7 may change the intensity of the processing light EL in accordance with the switching of the processing mode of the processing system SYS.
  • the intensity of the processed light EL used to perform the first modeling operation may be higher than the intensity of the processed light EL used to perform the second modeling operation.
  • the intensity of the processed light EL used to perform the second modeling operation may be lower than the intensity of the processed light EL used to perform the first modeling operation.
  • the intensity of the processed light EL used to perform the first modeling operation may be high enough to melt a portion of the workpiece W.
  • the intensity of the processed light EL used to perform the second modeling operation may not be so strong that it is unable to melt a portion of the workpiece W.
  • it is preferable that the intensity of the processed light EL used to perform the second modeling operation is high enough to melt the modeling material M.
  • the processing system SYS can perform a first modeling operation to form a first structural layer portion SL#1-1 that is integrated with the workpiece W or that is bonded to the workpiece W with a relatively strong bonding force, and can perform a second modeling operation to form a second structural layer portion SL#1-2 that is not integrated with the workpiece W or that is bonded to the workpiece W with a relatively weak bonding force.
  • the processing light EL continues to move during the period in which the processing light EL is deflected using at least one of the galvanometer mirrors 2146 and 2156. Therefore, the period in which the processing light EL is irradiated to the position on the printing surface MS where the first structural layer SL#1-1 is to be printed may not be very long. Therefore, it may not be easy to control at least one of the focus position CP and the position of the material control point MCP of the processing light EL within a relatively short time period corresponding to the drive cycle of the galvanometer mirrors 2146 and 2156.
  • control unit 7 may change the intensity of the processing light EL to substantially switch the processing mode of the processing system SYS between the first mode and the second mode.
  • control unit 7 may change the intensity of the processing light EL so that the intensity of the processing light EL used to perform the first printing operation and the intensity of the processing light EL used to perform the second printing operation are different from each other, thereby switching the processing mode of the processing system SYS between the first mode and the second mode.
  • control unit 7 may switch the processing mode of the processing system SYS between the first mode and the second mode by changing the intensity of the processing light EL so that the intensity of the processing light EL used to perform the first modeling operation is higher than the intensity of the processing light EL used to perform the second modeling operation.
  • the processing system SYS may form the remaining structural layer SL by performing either the first or second forming operation. However, when forming the remaining structural layer SL, the processing system SYS may perform both the first and second forming operations, as in the case of forming the first structural layer SL#1. As a result, as shown in FIG. 20, a three-dimensional structure ST is formed that includes the structural layer SL#1 formed by performing both the first and second forming operations. For example, a three-dimensional structure ST is formed that is connected to the workpiece W via the first structural layer portion SL#1-1.
  • the processing system SYS may use a separation device 81 provided in the processing system SYS to perform a separation operation to separate the three-dimensional structure ST from the workpiece W.
  • a separation device 81 provided in the processing system SYS to perform a separation operation to separate the three-dimensional structure ST from the workpiece W.
  • the workpiece W on which the three-dimensional structure ST has been formed may be removed from the processing system SYS (particularly, the stage 31), and the device other than the processing system SYS may use the separation device 81 to perform a separation operation to separate the three-dimensional structure ST from the workpiece W.
  • the processing system SYS does not need to be provided with the separation device 81.
  • the separation device 81 may separate the three-dimensional structure ST including the second structural layer portion SL#1-2 from the workpiece W by destroying the first structural layer portion SL#1-1 that is integrated with the workpiece W. For example, the separation device 81 may destroy the entire first structural layer portion SL#1-1. In this case, the three-dimensional structure ST separated from the workpiece W may not include the first structural layer portion SL#1-1. Alternatively, for example, the separation device 81 may destroy a portion of the first structural layer portion SL#1-1 while not destroying the other portion of the first structural layer portion SL#1-1. In this case, the three-dimensional structure ST separated from the workpiece W may not include a portion of the first structural layer portion SL#1-1, but may include the other portion of the first structural layer portion SL#1-1.
  • the separation device 81 may include a vibration device that vibrates the workpiece W.
  • the separation device 81 may separate the three-dimensional structure ST from the workpiece W by vibrating the workpiece W. Specifically, when the workpiece W vibrates, the vibration of the workpiece W is transmitted to the first structural layer portion SL#1-1.
  • the first structural layer portion SL#1-1 is integrated with the workpiece W or is connected with a relatively strong bonding force, the vibration of the workpiece W is likely to be transmitted as it is to the first structural portion SL#1-1. As a result, the first structural layer portion SL#1-1 is likely to be destroyed due to the vibration.
  • the separation device 81 can appropriately separate the three-dimensional structure ST including the second structural layer portion SL#1-2 from the workpiece W by selectively destroying the first structural layer portion SL#1-1.
  • the separating device 81 may separate the three-dimensional structure ST from the workpiece W by vibrating the workpiece W at the resonant frequency of the workpiece W.
  • the amplitude of the vibrating workpiece W becomes larger than when the workpiece W vibrates at a vibration frequency different from the resonant frequency of the workpiece W.
  • the first structural layer portion SL#1-1 which is integrated with the workpiece W or is connected with a relatively strong bonding force, is likely to be destroyed.
  • the separating device 81 can appropriately separate the three-dimensional structure ST including the second structural layer portion SL#1-2 from the workpiece W by selectively destroying the first structural layer portion SL#1-1. In this way, in the second specific example, the machining system SYS can form a three-dimensional structure ST that can be separated from the workpiece W relatively easily.
  • one structural layer SL includes a first structural layer portion SL#1-1 and a second structural layer portion SL#1-2.
  • the processing system SYS may separately form a first structural layer SL functioning as the first structural layer portion SL#1-1 and a second structural layer SL functioning as the second structural layer portion SL#1-2.
  • the processing system SYS may form a first structural layer SL#1 functioning as the first structural layer portion SL#1-1 by performing a first forming operation, and then form a second structural layer SL#2 functioning as the second structural layer portion SL#1-2 on the first structural layer SL#1 by performing a second forming operation. (3-3) Parallel execution of the first modeling operation and the second modeling operation
  • the processing system SYS forms a part (first portion) of the three-dimensional structure ST by performing a first modeling operation during a first period, and forms another part (second portion) of the three-dimensional structure ST by performing a second modeling operation during a second period different from the first period.
  • the processing system SYS may form at least a part of the three-dimensional structure ST by performing the first modeling operation and the second modeling operation in parallel during the first period.
  • the first period in which the first modeling operation is performed and the second period in which the second modeling operation is performed may at least partially overlap.
  • the processing system SYS may perform a second modeling operation in parallel with the first modeling operation. Specifically, even if the processing mode of the processing system SYS is set to the first mode, the processing system SYS may perform a first modeling operation by irradiating the printing surface MS with processing light EL to form a molten pool MP on the printing surface MS and supplying a first modeling material M to the formed molten pool MP, while performing a second modeling operation by irradiating the second modeling material M with processing light EL in the space between the material nozzle 212 and the printing surface MS to melt the second modeling material M and supply the molten second modeling material M to the printing surface MS.
  • the processing system SYS may perform the first modeling operation in parallel with the second modeling operation. Specifically, even if the processing mode of the processing system SYS is set to the second mode, the processing system SYS may perform the first modeling operation of irradiating the processing light EL to the first modeling material M in the space between the material nozzle 212 and the modeling surface MS to melt the first modeling material M and supply the molten first modeling material M to the modeling surface MS, while performing the first modeling operation of irradiating the processing light EL to the modeling surface MS to form a molten pool MP on the modeling surface MS and supplying the second modeling material M to the formed molten pool MP.
  • the processing light EL is irradiated onto the modeling material M supplied from the material nozzle 212 at a virtual material irradiation surface ES located in the space between the material nozzle 212 and the modeling surface MS.
  • a portion of the modeling material M supplied from the material nozzle 212 may be melted by the processing light EL, and the remaining portion of the modeling material M supplied from the material nozzle 212 may not be melted by the processing light EL.
  • the other portion of the modeling material M that is not melted at the material irradiation surface ES may be melted at the modeling surface MS.
  • the other portion of the modeling material M that is not melted at the material irradiation surface ES may be melted in a molten pool MP formed on the modeling surface MS.
  • the remaining part of the modeling material M that is not melted on the material irradiation surface ES may be heated (e.g., preheated) by the processing light EL on the material irradiation surface ES.
  • the crystal growth accuracy of the molten modeling material M when the molten modeling material M solidifies is improved compared to when the remaining part of the modeling material M is not heated.
  • the crystals of the modeling material M are more likely to grow in the expected growth pattern. Therefore, even when a second modeling operation with lower modeling accuracy than the first modeling operation is performed, the modeling accuracy of the processing system SYS is improved.
  • the processing system SYS can achieve both the effect of improving modeling accuracy and the effect of shortening the time required to model a three-dimensional structure ST (i.e., improving throughput).
  • control unit 7 may control the degree (proportion) of the three-dimensional structure ST formed by the first modeling operation and the degree (proportion) of the three-dimensional structure ST formed by the second modeling operation.
  • the control unit 7 may control the ratio between the degree to which the first modeling operation contributes to the modeling of the three-dimensional structure ST and the degree to which the second modeling operation contributes to the modeling of the three-dimensional structure ST.
  • control unit 7 may set the degree to which the first modeling operation contributes to the modeling of the three-dimensional structure ST to a first value greater than or equal to 0% and less than or equal to 100%, and set the degree to which the second modeling operation contributes to the modeling of the three-dimensional structure ST to a second value calculated by subtracting the first value from 100%.
  • the control unit 7 may control the degree to which a three-dimensional structure ST is formed by the first modeling operation and the degree to which a three-dimensional structure ST is formed by the second modeling operation by controlling at least one of the focus position CP of the processing light EL and the position of the material control point MCP. For example, the longer the distance D1 between the focus position CP of the processing light EL and the modeling surface MS, the smaller the degree to which a three-dimensional structure ST is formed by the first modeling operation and the larger the degree to which a three-dimensional structure ST is formed by the second modeling operation.
  • control unit 7 may control the degree to which the three-dimensional structure ST is formed by the first modeling operation and the degree to which the three-dimensional structure ST is formed by the second modeling operation by controlling at least one of the focus position CP of the processing light EL and the position of the material control point MCP to control at least one of the distances D1 and D3.
  • the degree (proportion) to which the three-dimensional structure ST is formed by the first modeling operation may be a parameter based on the amount of energy transferred from the processing light EL to the modeling surface MS by the first modeling operation.
  • the degree (proportion) to which the three-dimensional structure ST is formed by the first modeling operation may be a parameter proportional to the amount of energy transferred from the processing light EL to the modeling surface MS by the first modeling operation.
  • the degree (proportion) to which the three-dimensional structure ST is formed by the second modeling operation may be a parameter based on the amount of energy transferred from the processing light EL to the material irradiation surface ES (particularly, the modeling material M supplied to the material irradiation surface ES) by the second modeling operation.
  • the degree (proportion) to which the three-dimensional structure ST is formed by the first modeling operation may be a parameter proportional to the amount of energy transferred from the processing light EL to the material irradiation surface ES (particularly, the modeling material M supplied to the material irradiation surface ES) by the second modeling operation.
  • the ratio of the amount of energy transferred from the processing light EL to the printing surface MS by the first printing operation to the sum of the amount of energy transferred from the processing light EL to the printing surface MS by the first printing operation and the amount of energy transferred from the processing light EL to the material irradiation surface ES by the second printing operation may be used as the degree (proportion) to which the three-dimensional structure ST is formed by the first printing operation.
  • the ratio of the amount of energy transferred from the processing light EL to the material irradiation surface ES by the second printing operation to the sum of the amount of energy transferred from the processing light EL to the printing surface MS by the first printing operation and the amount of energy transferred from the processing light EL to the material irradiation surface ES by the second printing operation may be used as the degree (proportion) to which the three-dimensional structure ST is formed by the second printing operation.
  • the processing system SYS may form the three-dimensional structure ST in a state in which either the degree to which the three-dimensional structure ST is formed by the first printing operation or the degree to which the three-dimensional structure ST is formed by the second printing operation is greater than the other of the degree to which the three-dimensional structure ST is formed by the first printing operation or the degree to which the three-dimensional structure ST is formed by the second printing operation.
  • the processing system SYS may form the three-dimensional structure ST in a state in which either the amount of energy transmitted from the processing light EL to the printing surface MS by the first printing operation or the amount of energy transmitted from the processing light EL to the material irradiation surface ES by the second printing operation is greater than the other of the amount of energy transmitted from the processing light EL to the printing surface MS by the first printing operation or the amount of energy transmitted from the processing light EL to the material irradiation surface ES by the second printing operation.
  • the processing system SYS may form the three-dimensional structure ST in a state in which the degree to which the three-dimensional structure ST is formed by the first modeling operation is 70%, and the degree to which the three-dimensional structure ST is formed by the second modeling operation is 30%.
  • the processing system SYS may form the three-dimensional structure ST in a state in which the degree to which the three-dimensional structure ST is formed by the first modeling operation is 30%, and the degree to which the three-dimensional structure ST is formed by the second modeling operation is 70%.
  • the processing system SYS that forms the three-dimensional structure ST in a state in which the degree to which the three-dimensional structure ST is formed by the first-printing operation is greater than the degree to which the three-dimensional structure ST is formed by the second-printing operation may be considered to be forming the three-dimensional object ST in the first mode.
  • the processing system SYS that forms the three-dimensional structure ST in a state in which the amount of energy transferred from the processing light EL to the printing surface MS by the first-printing operation is greater than the amount of energy transferred from the processing light EL to the material irradiation surface ES by the second-printing operation may be considered to be forming the three-dimensional object ST in the first mode.
  • the processing system SYS that forms the three-dimensional structure ST in a state in which the degree to which the three-dimensional structure ST is formed by the second-printing operation is greater than the degree to which the three-dimensional structure ST is formed by the first-printing operation may be considered to be forming the three-dimensional object ST in the second mode.
  • a processing system SYS that forms a three-dimensional structure ST in a state in which the amount of energy transmitted from the processing light EL to the material irradiation surface ES by the second printing operation is greater than the amount of energy transmitted from the processing light EL to the printing surface MS by the first printing operation may be considered to be forming a three-dimensional object ST in the second mode.
  • the processing system SYS performing the second modeling operation uses both the processing light EL#1 and EL#2 to melt the modeling material M on the material irradiation surface ES (i.e., in the space between the material nozzle 212 and the modeling surface MS).
  • the purpose of the processing light EL#1 and the purpose of the processing light EL#2 are the same.
  • the processing system SYS performing the second modeling operation may use either one of the processing light EL#1 and EL#2 for a first purpose, and either one of the processing light EL#1 and EL#2 for a second purpose different from the first purpose.
  • the processing system SYS may use the processing light EL#1 and EL#2 depending on the purpose.
  • the processing system SYS may irradiate the forming material M with processing light EL#1 at the material irradiation surface ES (i.e., in the space between the material nozzle 212 and the forming surface MS, the same below).
  • the processing system SYS may irradiate the forming material M with processing light EL#1 at the material irradiation surface ES while deflecting the processing light EL#1 using the galvanometer mirror 2146.
  • the processing system SYS may irradiate the forming material M with processing light EL#1 at the material irradiation surface ES without deflecting the processing light EL#1 using the galvanometer mirror 2146.
  • the processing system SYS may melt the modeling material M at the material irradiation surface ES by irradiating the modeling material M with processing light EL#1 at the material irradiation surface ES.
  • the processing system SYS may not melt the modeling material M at the material irradiation surface ES by irradiating the modeling material M with processing light EL#1 at the material irradiation surface ES.
  • the processing system SYS may heat (e.g., preheat) the modeling material M at the material irradiation surface ES by irradiating the modeling material M with processing light EL#1 at the material irradiation surface ES.
  • the processing system SYS may irradiate the printing surface MS with processing light EL#2.
  • the processing system SYS may irradiate the printing surface MS with processing light EL#2 while deflecting the processing light EL#2 using the galvanometer mirror 2156.
  • the processing system SYS may irradiate the processing light EL#2 on the printing surface MS without deflecting the processing light EL#2 using the galvanometer mirror 2156.
  • the processing system SYS may form a molten pool MP on the printing surface MS by irradiating the printing surface MS with processing light EL#2.
  • the processing system SYS may not form a molten pool MP on the printing surface MS by irradiating the printing surface MS with processing light EL#2.
  • the processing system SYS may heat (e.g., preheat) the printing surface MS by irradiating the printing surface MS with processing light EL#2.
  • the processing system SYS may melt the printing material M supplied to the printing surface MS without melting it by irradiating the printing surface MS with processing light EL#2.
  • the control unit 7 may control the focus position CP of the processing light EL so that the focus position CP#1 of the processing light EL#1 is located in the space between the material nozzle 212 and the modeling surface MS. Also, as shown in FIG. 22, the control unit 7 may control the focus position CP of the processing light EL so that the focus position CP#2 of the processing light EL#2 is located on or near the modeling surface MS. In particular, as shown in FIG. 22, the control unit 7 may control the focus position CP of the processing light EL so that the focus position CP#1 of the processing light EL#1 and the focus position CP#2 of the processing light EL#2 are different along the Z-axis direction.
  • the processing system SYS can irradiate the modeling material M on the material irradiation surface ES with a relatively high intensity processing light EL#1, and can irradiate the modeling surface MS with a relatively high intensity processing light EL#2.
  • the control unit 7 may control the focus position CP of the processing light EL such that the distance D1 between the focus position CP#1 of the processing light EL#1 and the printing surface MS is longer than the distance D1 between the focus position CP#2 of the processing light EL#2 and the printing surface MS.
  • the control unit 7 may control the focus position CP of the processing light EL such that the distance D1 between the focus position CP#1 of the processing light EL#1 and the printing surface MS is a first distance D13 that is longer than the second distance D14, and the distance D1 between the focus position CP#2 of the processing light EL#2 and the printing surface MS is a second distance D14 that is shorter than the first distance D13.
  • the processing system SYS can irradiate the printing material M at the material irradiation surface ES with a relatively high intensity processing light EL#1, and can irradiate the printing surface MS with a relatively high intensity processing light EL#2.
  • control unit 7 may control at least one of the focus position CP of the processing light EL and the position of the material control point MCP so that the distance D3 between the focus position CP#1 of the processing light EL#1 and the material control point MCP is shorter than the distance D3 between the focus position CP#2 of the processing light EL#2 and the material control point MCP.
  • control unit 7 may control at least one of the focus position CP of the processing light EL and the material control point MCP so that the distance D3 between the focus position CP#1 of the processing light EL#1 and the material control point MCP is a first distance D33 that is shorter than the second distance D34, and the distance D3 between the focus position CP#2 of the processing light EL#2 and the material control point MCP is a second distance D34 that is longer than the first distance D33.
  • the material control point MCP is located at the same position in the Z-axis direction as the focus position CP#1 of the processing light EL#1, so the distance D3 between the focus position CP#1 of the processing light EL#1 and the material control point MCP is zero, but the distance D3 between the focus position CP#1 of the processing light EL#1 and the material control point MCP does not have to be zero.
  • the processing system SYS can irradiate the relatively high-intensity processing light EL#1 to the modeling material M on the material irradiation surface ES, and can irradiate the relatively high-intensity processing light EL#2 to the modeling surface MS.
  • the forming material M irradiated with the processing light EL#1 on the material irradiation surface ES may be supplied to the forming surface MS.
  • the forming material M irradiated with the processing light EL#1 on the material irradiation surface ES may be supplied to a desired area of the forming surface MS irradiated with the processing light EL#2.
  • the forming material M irradiated with the processing light EL#1 on the material irradiation surface ES may be supplied to the molten pool MP formed in the desired area.
  • the processing system SYS may form a molded object in the desired area of the forming surface MS irradiated with the processing light EL#2 by supplying the forming material M irradiated with the processing light EL#1 on the material irradiation surface ES to the desired area of the forming surface MS irradiated with the processing light EL#2.
  • the desired area of the forming surface MS irradiated with the processing light EL#2 is referred to as the irradiated area MSL.
  • the forming material M irradiated with the processing light EL#1 on the material irradiation surface ES may be supplied to a region of the forming surface MS different from the irradiated region MSL (i.e., a region not irradiated with the processing light EL#2).
  • the processing system SYS may form a formed object in the region different from the irradiated region MSL by supplying the forming material M irradiated with the processing light EL#1 on the material irradiation surface ES to a region of the forming surface MS different from the irradiated region MSL.
  • the processing system SYS melts the printing material M on the material irradiation surface ES by irradiating the printing material M on the material irradiation surface ES with processing light EL#1. Furthermore, in the first specific example, as shown in FIG. 23, the processing system SYS may heat (e.g., preheat) the printing surface MS by irradiating the printing surface MS with processing light EL#2. In other words, the processing system SYS may heat (e.g., preheat) the irradiated region MSL of the printing surface MS that is irradiated with the processing light EL#2 by irradiating the printing surface MS with processing light EL#2. Note that the processing system SYS does not have to form a molten pool MP on the printing surface MS by irradiating the printing surface MS with processing light EL#2.
  • the modeling material M melted by the processing light EL#1 may be supplied to the irradiated area MSL heated by the processing light EL#2.
  • the processing system SYS may heat the irradiated area MSL with the processing light EL#2, and then supply the modeling material M melted by the processing light EL#1 to the irradiated area MSL heated by the processing light EL#2.
  • a modeled object is formed on the printing surface MS (particularly on the irradiated area MSL).
  • the processing system SYS may form a modeled object on the printing surface MS by performing the second printing operation described above while heating the printing surface MS.
  • the crystal growth accuracy of the modeling material M when the molten modeling material M solidifies is improved compared to when the modeling material M is supplied to a modeling surface MS that is not pre-heated.
  • the crystals of the modeling material M are more likely to grow in the expected growth pattern during the process of solidifying the molten modeling material M. Therefore, when the modeling material M is supplied to a pre-heated modeling surface MS, the error between the actual size (e.g., at least one of the width, length, and thickness) of the modeled object and the target size is smaller compared to when the modeling material M is supplied to a modeling surface MS that is not pre-heated. This improves the modeling accuracy of the processing system SYS.
  • the processing system SYS can selectively use the processing light EL#1, which is primarily used to melt the modeling material M, and the processing light EL#2, which is primarily used to improve modeling accuracy.
  • the modeling accuracy of the processing system SYS is improved compared to when both processing lights EL#1 and EL#2 are primarily used to melt the modeling material M.
  • the size of the object to be formed depends on the size of the irradiated area MSL of the forming surface MS that is heated by the processing light EL#2. This is because the forming material M is supplied to the irradiated area MSL, and then the supplied forming material M solidifies in the irradiated area MSL. For this reason, the irradiated area MSL may be considered to indicate the area where the object is to be formed.
  • Heating a part of the forming surface MS with the processing light EL#2 may be considered to be equivalent to marking the area where the object is to be formed on the forming surface MS. Furthermore, the size of the irradiated area MSL depends on the amount of deflection of the processing light EL#2 by the galvanometer mirror 2156. Therefore, the control unit 7 may control the amount of deflection of the processing light EL#2 by the galvanometer mirror 2156 so that the size of the object to be formed matches the target size.
  • the processing system SYS can form a model that is relatively strongly bonded to the modeling surface MS, compared to when the modeling material M is supplied to a modeling surface MS that is not pre-heated.
  • the control unit 7 may determine whether or not to deflect the processing light EL#2 using the galvanometer mirror 2156 based on the size of the region on the printing surface MS that should be heated by the processing light EL#2 (i.e., the size of the assumed irradiated region MSL).
  • the processing system SYS may heat (e.g., preheat) at least a portion of the printing material M on the material irradiation surface ES by irradiating the printing material M on the material irradiation surface ES with processing light EL#1. Furthermore, in the second specific example, as shown in FIG. 24, the processing system SYS may heat (e.g., preheat) the printing surface MS by irradiating the printing surface MS with processing light EL#2.
  • the processing system SYS may heat (e.g., preheat) the irradiated area MSL of the printing surface MS irradiated with the processing light EL#2 by irradiating the printing surface MS with processing light EL#2.
  • the processing system SYS may or may not form a molten pool MP on the printing surface MS by irradiating the printing surface MS with processing light EL#2.
  • the processing system SYS under the control of the control unit 7, heats at least a portion of the modeling material M on the material irradiation surface ES, thereby controlling the temperature distribution of the modeling material M.
  • the processing system SYS under the control of the control unit 7, heats at least a portion of the modeling material M on the material irradiation surface ES, thereby controlling the temperature distribution of the modeling material M within the material irradiation surface ES.
  • the control unit 7 may control the distribution of the amount of heat (hereinafter referred to as the heat input amount) applied to the modeling material M per unit time by irradiation with the processing light EL#1 within the material irradiation surface ES.
  • the control unit 7 may change the amount of heat input to the modeling material M by irradiation with the processing light EL#1 according to the position (location) within the material irradiation surface ES. For example, as shown in the lower part of FIG.
  • control unit 7 may change the amount of heat input to the modeling material M by irradiation with the processing light EL#1 so that the amount of heat input to the modeling material M in a first material passing area ESP#1 within the material irradiation surface ES is different from the amount of heat input to the modeling material M in a second material passing area ESP#2 within the material irradiation surface ES that is different from the first material passing area ESP#2.
  • each of the first material passing area ESP#1 and the second material passing area ESP#2 may be considered to be an area within the material irradiation surface ES through which the modeling material M passes.
  • the first material passing area ESP#1 and the second material passing area ESP#2 will be referred to as the first material passing area ESP#1 and the second material passing area ESP#2, respectively.
  • the control unit 7 may change the amount of heat input to the forming material M by irradiation with the processing light EL#1 so that the farther a material passing area in the material irradiation surface ES is from the optical axis AX of the irradiation optical system 211, the greater the amount of heat input to the forming material M in that material passing area.
  • the distance between the first material passing area ESP#1 and the optical axis AX in the material irradiation surface ES is longer than the distance between the second material passing area ESP#2 and the optical axis AX.
  • the control unit 7 may change the amount of heat input to the forming material M by irradiation with the processing light EL#1 so that the amount of heat input to the forming material M in a first material passing area ESP#1 in the material irradiation surface ES is greater than the amount of heat input to the forming material M in a second material passing area ESP#2 in the material irradiation surface ES that is different from the first material passing area ESP#2.
  • the temperature of the modeling material M passing through the material passing area in the material irradiation surface ES increases as the material passing area in the material irradiation surface ES is farther from the optical axis AX of the irradiation optical system 211.
  • control unit 7 may change the amount of heat input to the modeling material M by irradiation with the processing light EL#1 so that the temperature of the modeling material M passing through the material passing area in the material irradiation surface ES increases as the material passing area in the material irradiation surface ES is farther from the optical axis AX of the irradiation optical system 211. In this case, as shown in the lower part of FIG.
  • control unit 7 may change the amount of heat input to the modeling material M by irradiation with the processing light EL#1 so that the temperature of the modeling material M passing through the material passing area in the material irradiation surface ES increases continuously as the material passing area in the material irradiation surface ES is farther from the optical axis AX of the irradiation optical system 211.
  • the control unit 7 may change the amount of heat input to the modeling material M by irradiation with the processing light EL#1 so that the temperature of the modeling material M passing through the material passing area in the material irradiation surface ES increases continuously as the material passing area in the material irradiation surface ES is farther from the optical axis AX of the irradiation optical system 211.
  • control unit 7 may change the amount of heat input to the modeling material M by irradiation with the processing light EL#1 so that the temperature of the modeling material M passing through one material passing region in the material irradiation surface ES gradually increases as the material passing region in the material irradiation surface ES becomes farther from the optical axis AX of the irradiation optical system 211.
  • control unit 7 may change the amount of heat input to the modeling material M by irradiation with the processing light EL#1 so that the temperature of the modeling material M passing through a first material passing region ESP#1 in the material irradiation surface ES is higher than the temperature of the modeling material M passing through a second material passing region ESP#2 in the material irradiation surface ES that is different from the first material passing region ESP#2.
  • control unit 7 may change the intensity of the processing light EL#1 according to the position in the material irradiation surface ES.
  • control unit 7 may change the amount of heat input to the modeling material M by irradiation with the processing light EL#1 so that the intensity of the processing light EL#1 irradiated to the modeling material M passing through a first material passing area ESP#1 in the material irradiation surface ES is different from the intensity of the processing light EL#1 irradiated to the modeling material M passing through a second material passing area ESP#2 in the material irradiation surface ES.
  • control unit 7 may change the intensity of the processing light EL#1 so that the intensity of the processing light EL#1 irradiated to the modeling material M passing through a material passing area in the material irradiation surface ES increases as the material passing area in the material irradiation surface ES becomes farther from the optical axis AX of the irradiation optical system 211.
  • the control unit 7 may change the intensity of the processing light EL#1 so that the intensity of the processing light EL#1 irradiated to the modeling material M passing through a material passing area in the material irradiation surface ES increases as the material passing area in the material irradiation surface ES becomes farther from the optical axis AX of the irradiation optical system 211. For example, as shown in the lower part of FIG.
  • control unit 7 may change the amount of heat input to the modeling material M by irradiation with the processing light EL#1 so that the intensity of the processing light EL#1 irradiated to the modeling material M passing through a first material passing area ESP#1 in the material irradiation surface ES is higher than the intensity of the processing light EL#1 irradiated to the modeling material M passing through a second material passing area ESP#2 in the material irradiation surface ES.
  • the control unit 7 may change the intensity of the processing light EL#1 while deflecting the processing light EL#1 using the galvanometer mirror 2146 so that the processing light EL#1 moves within the material irradiation surface ES (i.e., essentially scans the material irradiation surface ES).
  • the control unit 7 may change the intensity of the processing light EL#1 in synchronization with the deflection of the processing light EL#1 using the galvanometer mirror 2146.
  • control unit 7 may deflect the processing light EL#1 using the galvanometer mirror 2146 so that the processing light EL#1 is irradiated onto the modeling material M passing through the first material passing area ESP#1 within the material irradiation surface ES, and change the intensity of the processing light EL#1 to a relatively high intensity.
  • control unit 7 may deflect the processing light EL#1 using the galvanometer mirror 2146 so that the processing light EL#1 is irradiated onto the modeling material M passing through the second material passing area ESP#2 within the material irradiation surface ES, and may change the intensity of the processing light EL#1 to a relatively low intensity.
  • the modeling material M heated by the processing light EL#1 on the material irradiation surface ES may be supplied to the modeling surface MS heated by the processing light EL#2.
  • the processing system SYS may supply the modeling material M heated by the processing light EL#1 (i.e., with controlled temperature distribution) to the modeling surface MS heated by the processing light EL#2.
  • modeling material M with a controlled temperature distribution in the plane intersecting the Z-axis is supplied to the modeling surface MS.
  • FIG. 25 which is a cross-sectional view showing modeling material M supplied to the modeling surface MS
  • modeling material M is supplied to the modeling surface MS that satisfies the condition that the temperature of the modeling material M supplied to a modeling area in the modeling surface MS increases as the area becomes farther away from the optical axis AX of the irradiation optical system 211.
  • the supplied modeling material M is cooled and solidified on the modeling surface MS.
  • the cooling behavior of the printing material M in a first printing area BA#1 on the printing surface MS may differ from the cooling behavior of the printing material M in a second printing area BA#2 on the printing surface MS that is different from the first printing area BA#1.
  • the first printing area BA#1 is located closer to the edge of the workpiece W than the second printing area BA#2
  • the second printing area BA#2 is located closer to the center of the workpiece W than the first printing area BA#1.
  • the edges of the workpiece W may have more paths for dissipating the heat generated by the modeling material M than the center of the workpiece W. This is because, while at the center of the workpiece W, the top surface of the workpiece W exists as a path for dissipating the heat generated by the modeling material M, at the edges of the workpiece W, not only the top surface of the workpiece W but also the side surfaces of the workpiece W exist as paths for dissipating the heat generated by the modeling material M. Therefore, at the edges of the workpiece W, the modeling material M is easily cooled, but at the center of the workpiece W, the modeling material M is difficult to cool.
  • the edges of the workpiece W may have fewer paths for dissipating heat generated by the modeling material M compared to the center of the workpiece W.
  • the paths for dissipating heat at the center of the workpiece W may be downward or diagonally downward from the center of the workpiece W toward the inside of the workpiece W, while the paths for dissipating heat at the edges of the workpiece W may be diagonally downward from the edges of the workpiece W, resulting in fewer paths.
  • the temperature distribution of the modeling material M supplied to the modeling surface MS is not controlled within the modeling surface MS (i.e., if the modeling material M supplied to the modeling surface MS has a uniform temperature distribution)
  • the time required for the modeling material M to solidify in the first modeling area BA#1 on the modeling surface MS will be relatively long, and the time required for the modeling material M to solidify in the second modeling area BA#2 on the modeling surface MS will be relatively short.
  • the thermal gradient of the workpiece W when the modeling material M is cooled will be relatively large. As a result, cracks may occur in the workpiece W.
  • the temperature distribution of the modeling material M supplied to the modeling surface MS is controlled within the modeling surface MS.
  • a modeling material M with a relatively high temperature is supplied to the first modeling area BA#1 on the modeling surface MS where the modeling material M is easily cooled
  • a modeling material M with a relatively low temperature is supplied to the second modeling area BA#2 on the modeling surface MS where the modeling material M is difficult to cool. Therefore, the difference between the time required for the modeling material M to solidify in the first modeling area BA#1 on the modeling surface MS and the time required for the modeling material M to solidify in the second modeling area BA#2 on the modeling surface MS becomes small. Therefore, the thermal gradient of the workpiece W when the modeling material M is cooled becomes relatively small.
  • the processing system SYS performing the second modeling operation supplies modeling material M to a virtual material irradiation surface ES that intersects with the Z-axis between the material nozzle 212 and the modeling surface MS. Furthermore, as explained with reference to Figures 11 to 13, the processing system SYS performing the second modeling operation uses the galvanometer mirrors 2146 and 2156 to move the beam passing area PA through which the processing light EL passes within the irradiation unit area MUA so that the processing light EL essentially scans the virtual irradiation unit area MUA on the material irradiation surface ES.
  • the modeling material M actually irradiated with the processing light EL on the material irradiation surface ES contributes greatly to the modeling of the modeled object by the second modeling operation, while the modeling material M not irradiated with the processing light EL on the material irradiation surface ES does not contribute or contributes very little to the modeling of the modeled object by the second modeling operation.
  • the ratio of the amount of the modeling material M actually irradiated with the processing light EL on the material irradiation surface ES to the amount of the modeling material M supplied to the material irradiation surface ES is equivalent to the probability that the processing light EL actually irradiates the modeling material M on the material irradiation surface ES (i.e., the probability that the processing light EL and the modeling material M interfere with each other on the material irradiation surface ES), and therefore this ratio is referred to as the "interference probability" in the following explanation.
  • the interference probability is 100%.
  • the interference probability is 0%.
  • N% is a variable indicating a number greater than or equal to 0 and less than 100
  • the interference probability is N%.
  • the interference probability may also be referred to as the irradiation probability.
  • FIG. 26(a) shows an example in which modeling material M is supplied to a material supply area MSA having a ring shape on the material irradiation surface ES, and the beam passing area PA (i.e., the processing light EL) moves back and forth along a linear movement trajectory within the irradiation unit area MUA set on the material irradiation surface ES.
  • the beam passing area PA i.e., the processing light EL
  • Figure 26 (b) shows an example in which modeling material M is supplied to a material supply area MSA having a ring shape on the material irradiation surface ES, and the beam passing area PA (i.e., processing light EL) rotates along a ring-shaped movement trajectory within an irradiation unit area MUA set on the material irradiation surface ES.
  • the beam passing area PA i.e., processing light EL
  • the interference probability may be considered to be equivalent to the ratio of the beam irradiation area, which is the range of movement of the beam passing area PA on the material irradiation surface ES, to the material supply area MSA on the material irradiation surface ES where the modeling material M is supplied.
  • the ratio of the beam irradiation area to the material supply area MSA may be considered to be equivalent to the ratio of the area of the beam irradiation area on the material irradiation surface ES to the area of the material supply area MSA on the material irradiation surface ES.
  • the interference probability may be considered to be equivalent to the ratio of the beam irradiation area in the material supply area MSA to the material supply area MSA.
  • the ratio of the beam irradiation area in the material supply area MSA to the material supply area MSA may be considered to be equivalent to the ratio of the area of the beam irradiation area in the material supply area MSA to the area of the material supply area MSA on the material irradiation surface ES.
  • the processing system SYS may perform operations under the control of the control unit 7 to increase the interference probability so that the interference probability does not become extremely low.
  • the control unit 7 may control (typically change) the irradiation mode of the processing light EL based on the supply mode of the modeling material M so as to satisfy the interference probability condition that the interference probability does not become extremely low.
  • the control unit 7 may control (typically change) the processing light EL based on the supply mode of the modeling material M so as to satisfy the interference probability condition.
  • the control unit 7 may control (typically change) the irradiation of the processing light EL based on the supply mode of the modeling material M so as to satisfy the interference probability condition.
  • control unit 7 may control the irradiation mode of the processing light EL on the material irradiation surface ES based on the supply mode of the modeling material M on the material irradiation surface ES so as to satisfy the interference probability condition.
  • control unit 7 may control the processing light EL on the material irradiation surface ES based on the supply mode of the modeling material M on the material irradiation surface ES so as to satisfy the interference probability condition.
  • control unit 7 may control the irradiation of the processing light EL on the material irradiation surface ES based on the supply mode of the modeling material M on the material irradiation surface ES so as to satisfy the interference probability condition.
  • the interference probability condition may include a condition that the interference probability exceeds a lower threshold.
  • the interference probability condition may include a condition that the interference probability is improved by controlling the irradiation mode of the processing light EL.
  • the interference probability condition may include a condition that the interference probability is higher after controlling the irradiation mode of the processing light EL compared to the interference probability before controlling the irradiation mode of the processing light EL.
  • control unit 7 may control the movement trajectory of the beam passing area PA within the material irradiation surface ES based on at least one of the shape and size of the material supply area MSA so as to satisfy the interference probability condition.
  • Each of the shape and size of the material supply area MSA is an example of the supply mode of the forming material M.
  • the movement trajectory of the beam passing area PA within the material irradiation surface ES is an example of the irradiation mode of the processing light EL.
  • the movement trajectory of the beam passing area PA within the material irradiation surface ES may be considered to be equivalent to the movement trajectory of the beam passing area PA within the irradiation unit area MUA.
  • control unit 7 may control the movement trajectory of the beam passing area PA within the material irradiation surface ES based on the shape of the material supply area MSA so that the shape of the movement trajectory of the beam passing area PA within the material irradiation surface ES is determined according to the shape of the material supply area MSA.
  • Figure 27(a) shows an example in which the shape of the material supply area MSA on the material irradiation surface ES is annular.
  • the control unit 7 may control the movement trajectory of the beam passing area PA within the material irradiation surface ES so that the shape of the movement trajectory of the beam passing area PA within the material irradiation surface ES becomes an annular shape determined according to the shape of the material supply area MSA.
  • the shape of the movement trajectory of the beam passing area PA when the shape of the material supply area MSA becomes annular is not limited to the shape shown in Figure 27(a).
  • Figure 27(b) shows an example in which the shape of the material supply area MSA on the material irradiation surface ES is circular.
  • the control unit 7 may control the movement trajectory of the beam passing area PA within the material irradiation surface ES so that the shape of the movement trajectory of the beam passing area PA within the material irradiation surface ES includes at least a part of a Lissajous curve determined according to the shape of the material supply area MSA.
  • the shape of the movement trajectory of the beam passing area PA when the shape of the material supply area MSA is circular is not limited to the shape shown in Figure 27(b).
  • the control unit 7 may control the movement trajectory of the beam passing area PA within the material irradiation surface ES so that the shape of the movement trajectory of the beam passing area PA within the material irradiation surface ES is a shape that includes at least a portion of any Lissajous curve.
  • the control unit 7 may control the movement trajectory of the beam passing area PA within the material irradiation surface ES based on the size of the material supply area MSA so that the size of the movement trajectory of the beam passing area PA within the material irradiation surface ES is a size determined according to the size of the material supply area MSA.
  • the size of the movement trajectory of the beam passing area PA within the material irradiation surface ES may be considered to be equivalent to the size of the beam irradiation area, which is the movement range within which the beam passing area PA moves on the material irradiation surface ES.
  • the size of the movement trajectory of the beam passing area PA within the material irradiation surface ES may be considered to be equivalent to the size of the irradiation unit area MUA that includes the movement range within which the beam passing area PA moves on the material irradiation surface ES.
  • FIG. 28(a) shows an example in which the size of the material supply area MSA is relatively large on the material irradiation surface ES.
  • the control unit 7 may control the movement trajectory of the beam passing area PA within the material irradiation surface ES so that the size of the movement trajectory of the beam passing area PA within the material irradiation surface ES becomes a relatively large size determined according to the size of the material supply area MSA.
  • Figure 28(b) shows an example in which the size of the material supply area MSA is relatively small on the material irradiation surface ES.
  • the control unit 7 may control the movement trajectory of the beam passing area PA within the material irradiation surface ES so that the size of the movement trajectory of the beam passing area PA within the material irradiation surface ES becomes a relatively small size determined according to the size of the material supply area MSA.
  • the control unit 7 may control the movement trajectory of the beam passing area PA within the material irradiation surface ES by controlling at least one of the galvanometer mirrors 2146 and 2156.
  • the control unit 7 may control at least one of the galvanometer mirrors 2146 and 2156 so that the movement trajectory of the beam passing area PA within the material irradiation surface ES becomes a desired movement trajectory.
  • the control unit 7 may substantially control the movement trajectory of the beam passing area PA by controlling the light source 4. Specifically, as shown in FIG. 29(a) and FIG. 29(b), the control unit 7 may substantially control the movement trajectory of the beam passing area PA by controlling the light source 4 to control the timing of emitting the processing light EL (conversely, to control the timing of not emitting the processing light EL) without changing the movement trajectory of the beam passing area PA using at least one of the galvanometer mirrors 2146 and 2156.
  • the substantial movement trajectory of the beam passing area PA is equivalent to a trajectory connecting the positions actually passed by the processing light EL at the timing when the processing light EL is emitted within the material irradiation surface ES.
  • the substantial movement trajectory of the beam passing area PA is equivalent to a trajectory connecting the positions where the beam passing area PA was located at the time when the processing light EL was emitted within the material irradiation surface ES.
  • the substantial movement trajectory of the beam passing area PA is a circular trajectory obtained by connecting the black circles shown in FIG. 29(a).
  • the substantial movement trajectory of the beam passing area PA is a trajectory that includes at least a part of the Lissajous waveform obtained by connecting the black circles shown in FIG. 29(b).
  • control unit 7 may substantially control the movement trajectory of the beam passing area PA by controlling the light source 4 to switch the intensity of the processing light EL between an intensity capable of melting the modeling material M and an intensity incapable of melting the modeling material M, without changing the movement trajectory of the beam passing area PA using at least one of the galvanometer mirrors 2146 and 2156.
  • the substantial movement trajectory of the beam passing area PA is equivalent to a trajectory connecting the positions where the processing light EL actually passed at the timing when the processing light EL having an intensity capable of melting the modeling material M was emitted in the material irradiation surface ES.
  • the substantial movement trajectory of the beam passing area PA is equivalent to a trajectory connecting the positions where the beam passing area PA was located at the timing when the processing light EL having an intensity capable of melting the modeling material M was emitted in the material irradiation surface ES.
  • the control unit 7 may control (typically change) at least one of the number n of processing light EL emitted by the processing head 21, the size S of the beam passing area PA within the material irradiation surface ES, and the movement speed V of the beam passing area PA so that the number n of processing light EL emitted by the processing head 21, the size S of the beam passing area PA within the material irradiation surface ES, and the movement speed V of the beam passing area PA within the material irradiation surface ES satisfy a predetermined condition determined according to the interference probability condition.
  • the control unit 7 may control (typically change) at least one of the number n of processing light EL, the size S of the beam passing area PA, and the movement speed V of the beam passing area PA so as to satisfy the interference probability condition.
  • the number n of the processing light EL, the size S of the beam passing area PA, and the movement speed V of the beam passing area PA are each an example of the irradiation mode of the processing light EL.
  • the size S of the beam passing area PA is equivalent to the size of a cross section of the processing light EL passing through the material irradiation surface ES along the material irradiation surface ES.
  • the beam passing area PA may be an area whose outer edge (in other words, the boundary) is a line connecting positions where the intensity of the processing light EL on the material irradiation surface ES is 1/n (n is a predetermined constant) times the maximum intensity of the processing light EL on the material irradiation surface ES.
  • the constant n may be (e ⁇ 2) (e is Napier's constant), 2, or any other value.
  • the beam passing area PA may be called a spot (specifically, a spot of the processing light EL within the material irradiation surface ES).
  • the movement speed V of the beam passing area PA may be considered to be equivalent to the drive speed of the galvanometer mirrors 2146 and 2156 that move the beam passing area PA within the material irradiation surface ES.
  • a condition that the number n of processing light EL, the size S of the beam passing area PA, and the movement speed V of the beam passing area PA should satisfy a condition that a parameter (i.e., n ⁇ s ⁇ V) obtained by multiplying the number n of processing light EL, the size S of the beam passing area PA, and the movement speed V of the beam passing area PA exceeds a predetermined constant K may be used.
  • the control unit 7 may control (typically change) at least one of the number n of processing light EL, the size S of the beam passing area PA, and the movement speed V of the beam passing area PA so that the parameter (n ⁇ s ⁇ V) exceeds the predetermined constant K.
  • the predetermined constant K may be a constant determined according to the supply mode of the modeling material M.
  • the predetermined constant K may be a constant determined according to the size of the material supply area MSA, which is an example of the supply mode of the modeling material M.
  • the predetermined constant K may be a constant that increases as the size of the material supply area MSA increases. Since the predetermined constant K is determined according to the supply mode of the modeling material M, at least one of the number n of the processing light EL, the size S of the beam passing area PA, and the movement speed V of the beam passing area PA is controlled so that the number n of the processing light EL, the size S of the beam passing area PA, and the movement speed V of the beam passing area PA satisfy predetermined conditions.
  • the second specific example of the beam control operation can be said to be an example of an operation that controls the irradiation mode of the processing light EL based on the supply mode of the modeling material M.
  • the control unit 7 can increase the probability of interference by controlling the number n of processing light EL so that the parameter (n x s x V) exceeds the predetermined constant K.
  • the control unit 7 can increase the probability of interference by controlling the size S of the beam passing area PA so that the parameter (n x s x V) exceeds the predetermined constant K.
  • the control unit 7 can increase the probability of interference by controlling the movement speed V of the beam passing area PA so that the parameter (n x s x V) exceeds the predetermined constant K.
  • the first specific example of the beam control operation and the second specific example of the beam control operation may both be considered to be operations for controlling the beam path of the processing light EL emitted from the irradiation optical system 211 based on the supply state of the modeling material M.
  • the beam path in the second modified example may mean a three-dimensional space through which the processing light EL deflected by the galvanometer mirror 2146 or 2156 passes, when the processing light EL is deflected by the galvanometer mirror 2146 or 2156.
  • the beam path in the second modified example may mean a three-dimensional space through which the processing light EL not deflected by the galvanometer mirror 2146 or 2156 passes, when the processing light EL is not deflected by the galvanometer mirror 2146 or 2156.
  • the three-dimensional space through which the processing light EL not deflected by the galvanometer mirror 2146 or 2156 passes may be considered to be substantially equivalent to a three-dimensional space determined by the outer shape of the processing light EL.
  • the outer shape of the processing light EL may be equivalent to the outer shape obtained by connecting the areas through which the processing light EL passes on each of the multiple material supply planes PL that intersect with the Z axis.
  • the area through which the processing light EL passes on each material supply plane PL may be an area whose outer edge (in other words, the boundary) is a line connecting positions where the intensity of the processing light EL on each material supply plane PL is 1/n (where n is a predetermined constant) times the maximum intensity of the processing light EL on each material supply plane PL.
  • the constant n may be (e ⁇ 2) (where e is Napier's constant), 2, or some other value.
  • both the first specific example of the beam control operation and the second specific example of the beam control operation may be considered as operations for controlling the beam path of the processing light EL from the irradiation optical system 211 based on the supply mode of the modeling material M.
  • the processing system SYS performing the second modeling operation melts the modeling material M by irradiating the modeling material M with processing light EL on the material irradiation surface ES (i.e., the space between the material nozzle 212 and the modeling surface MS).
  • the modeling material M melts due to irradiation with the processing light EL, there is a possibility that a part of the modeling material M will evaporate due to the irradiation with the processing light EL.
  • a recoil force evaporation recoil force caused by evaporation is generated in the molten modeling material M.
  • the material supply direction of the modeling material M changes from the first material supply direction, which is the material supply direction before the processing light EL is irradiated to the modeling material M, to the second material supply direction, which is the material supply direction after the processing light EL is irradiated to the modeling material M.
  • the processing system SYS may control the material supply direction of the modeling material M using the recoil force under the control of the control unit 7.
  • the processing system SYS may irradiate the modeling material M with the processing light EL to generate a recoil force under the control of the control unit 7, and control the material supply direction of the modeling material M using the generated recoil force.
  • the control unit 7 uses the recoil force to change the material supply direction of the modeling material M from a first material supply direction, which is the material supply direction before the modeling material M is irradiated with the processing light EL, to a second material supply direction, which is the material supply direction after the modeling material M is irradiated with the processing light EL.
  • the second material supply direction is typically different from the first material supply direction.
  • the processing system SYS can flexibly control the material supply direction of the modeling material M, compared to a case in which the material supply direction of the modeling material M is not controlled using the recoil force.
  • the control unit 7 may deflect the processing light EL using the galvanometer mirror 2146 or 2156 to irradiate the processing light EL to the desired modeling material M and change the material supply direction of the desired modeling material M.
  • the control unit 7 may deflect the processing light EL using the galvanometer mirror 2146 or 2156 to set the beam path of the processing light EL (see the second modified example) to a path that allows the material supply direction of the desired modeling material M to be changed, and then irradiate the processing light EL to the desired modeling material M and change the material supply direction of the desired modeling material M.
  • control unit 7 may deflect the processing light EL using the galvanometer mirror 2146 or 2156 to irradiate the processing light EL to the first modeling material M and change the material supply direction of the first modeling material M, while not irradiating the processing light EL to the second modeling material M and not changing the material supply direction of the second modeling material M.
  • the control unit 7 may change the material supply direction of the modeling material M based on the material supply direction of the modeling material M supplied from the material nozzle 212.
  • FIG. 32 shows the distribution of the amount (supply amount) of the modeling material M supplied to each position on the modeling surface MS, estimated from the material supply direction of the modeling material M supplied from the material nozzle 212.
  • the "distribution of the amount (supply amount) of the modeling material M supplied to each position on the modeling surface MS" here typically means the “distribution of the amount (supply amount) of the modeling material M supplied per unit time to each position on the modeling surface MS".
  • the "distribution of the amount (supply amount) of the modeling material M supplied to each position on the modeling surface MS” may also mean the “distribution of the amount (supply amount) of the modeling material M supplied to each position on the modeling surface MS at a certain time”.
  • the distribution of the supply amount of the modeling material M is uneven, in that the amount (supply amount) of the modeling material M supplied to a portion of the modeling surface MS is much greater than the amount (supply amount) of the modeling material M supplied to another portion of the modeling surface MS.
  • the control unit 7 may change the material supply direction of the modeling material M based on the material supply direction of the modeling material M supplied from the material nozzle 212 so that the distribution of the modeling material M approaches the target distribution.
  • control unit 7 may change the material supply direction of the forming material M so that the difference between the amount (supply amount) of the forming material M supplied to a partial region of the forming surface MS and the amount (supply amount) of the forming material M supplied to another partial region of the forming surface MS becomes smaller by changing the material supply direction of the forming material M.
  • control unit 7 may change the material supply direction of the forming material M so that the difference between the amount (supply amount) of the forming material M supplied to a partial region of the forming surface MS and the amount (supply amount) of the forming material M supplied to another partial region of the forming surface MS when the material supply direction of the forming material M is changed becomes smaller than the difference between the amount (supply amount) of the forming material M supplied to a partial region of the forming surface MS and the amount (supply amount) of the forming material M supplied to another partial region of the forming surface MS when the material supply direction of the forming material M is not changed.
  • the variation in the supply amount of the forming material M on the forming surface MS is suppressed.
  • the processing system SYS controls (typically changes) the irradiation mode of the processing light EL based on the supply mode of the modeling material M under the control of the control unit 7 so as to satisfy the interference probability condition.
  • the processing system SYS may control (typically change) the supply mode of the modeling material M based on the irradiation mode of the processing light EL under the control of the control unit 7 so as to satisfy the interference probability condition.
  • the processing system SYS may control (typically change) the supply mode of the modeling material M on the material irradiation surface ES based on the irradiation mode of the processing light EL on the material irradiation surface ES under the control of the control unit 7 so as to satisfy the interference probability condition.
  • control unit 7 controls the supply state of the modeling material M on the material irradiation surface ES based on the irradiation state of the processing light EL on the material irradiation surface ES under the control of the control unit 7 so as to satisfy the interference probability condition.
  • the control unit 7 may control (typically change) the size of the material supply area MSA in the material irradiation surface ES based on the size of the movement trajectory of the beam passing area PA in the material irradiation surface ES so as to satisfy the interference probability condition.
  • the size of the material supply area MSA is an example of the supply mode of the modeling material M. In the following description, the size of the material supply area MSA is represented by the reference symbol "MSA_size".
  • the size of the movement trajectory of the beam passing area PA in the material irradiation surface ES is an example of the irradiation mode of the processing light EL.
  • the size of the movement trajectory of the beam passing area PA in the material irradiation surface ES may be considered to be equivalent to the size of the beam irradiation area, which is the movement range in which the beam passing area PA moves on the material irradiation surface ES.
  • the size of the movement trajectory of the beam passing area PA in the material irradiation surface ES may be considered to be equivalent to the size of the irradiation unit area MUA that includes the movement range in which the beam passing area PA moves on the material irradiation surface ES.
  • the size of the irradiation unit area MUA is used as the size of the movement trajectory of the beam passing area PA within the material irradiation surface ES.
  • the size of the irradiation unit area MUA is represented using the reference symbol "MUA_size".
  • the size MUA_size of the irradiation unit area MUA may include the width of the irradiation unit area MUA (i.e., the length along one direction).
  • the size MSA_size of the material supply area MSA may include the width of the material supply area MSA (i.e., the length along one direction).
  • the control unit 7 may control the size MSA_size of the material supply area MSA so that the size MSA_size of the material supply area MSA matches the size MUA_size of the irradiation unit area MUA.
  • the probability of interference increases because the size MSA_size of the material supply area MSA matches the size MUA_size of the irradiation unit area MUA.
  • the state where "the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA match" may include a state where the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA match completely.
  • the state where "the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA match" may include a state where the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA do not match completely, but the difference between the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA is small enough that the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA can be considered to substantially match.
  • the state in which "the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA are the same" may include a state in which the difference between the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA is equal to or less than a predetermined allowable condition value.
  • the control unit 7 may control the size MSA_size of the material supply area MSA so that the difference between the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA becomes smaller by controlling (changing) the size MSA_size of the material supply area MSA.
  • control unit 7 may control (change) the size MSA_size of the material supply area MSA so that the difference between the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA when the size MSA_size of the material supply area MSA is changed becomes smaller than the difference between the size MSA_size of the material supply area MSA and the size MUA_size of the irradiation unit area MUA when the size MSA_size of the material supply area MSA is not changed.
  • the interference probability increases by controlling (changing) the size MSA_size of the material supply area MSA.
  • the control unit 7 may control the nozzle drive system 23 to control the size MSA_size of the material supply area MSA. Specifically, as shown in FIG. 35, the control unit 7 may control the nozzle drive system 23 to move the material nozzle 212 along the Z-axis direction, thereby controlling the size MSA_size of the material supply area MSA.
  • the control unit 7 may reduce the size MSA_size of the material supply area MSA by moving the material nozzle 212 along the Z-axis direction toward the +Z side (i.e., upward).
  • the control unit 7 may reduce the size MSA_size of the material supply area MSA by moving the material nozzle 212 along the Z-axis direction so that the material nozzle 212 moves away from the material irradiation surface ES.
  • the control unit 7 may reduce the size MSA_size of the material supply area MSA by moving the material nozzle 212 along the Z-axis direction so that the material nozzle 212 moves away from the printing surface MS.
  • the control unit 7 may increase the size MSA_size of the material supply area MSA by moving the material nozzle 212 along the Z-axis direction toward the -Z side (i.e., downward).
  • the control unit 7 may increase the size MSA_size of the material supply area MSA by moving the material nozzle 212 along the Z-axis direction so that the material nozzle 212 approaches the material irradiation surface ES.
  • the control unit 7 may increase the size MSA_size of the material supply area MSA by moving the material nozzle 212 along the Z-axis direction so that the material nozzle 212 approaches the printing surface MS.
  • the operation of controlling the size MSA_size of the material supply area MSA by moving the material nozzle 212 along the Z-axis direction may be considered equivalent to the operation of controlling the size MSA_size of the material supply area MSA by changing the distance between the material nozzle 212 and each of the material irradiation surface ES and the printing surface MS along the Z-axis direction.
  • the processing system SYS may be provided with a measuring device 83 that measures the distance between the material nozzle 212 and the printing surface MS along the Z-axis direction.
  • the processing system SYS may be provided with a capacitance sensor 83a that detects a change in capacitance due to the presence of the printing surface MS in order to measure the distance between the material nozzle 212 and the printing surface MS as the measuring device 83.
  • a capacitance sensor 83a that detects a change in capacitance due to the presence of the printing surface MS in order to measure the distance between the material nozzle 212 and the printing surface MS as the measuring device 83.
  • the processing system SYS may be provided with an optical sensor 83b that detects return light from the printing surface MS in order to measure the distance between the material nozzle 212 and the printing surface MS as the measuring device 83.
  • An example of the optical sensor 83b is a camera.
  • An example of the optical sensor 83b is a range finder such as a TOF (Time Of Flight) sensor.
  • the optical sensor 83b receives the return light via the irradiation optical system 211, but the return light may be received without passing through the irradiation optical system 211.
  • the control unit 7 may calculate the distance between the material nozzle 212 and the printing surface MS along the Z-axis direction based on the measurement results of the measuring device 83, and move the material nozzle 212 so that the calculated distance becomes the target distance.
  • the control unit 7 may calculate the target distance required to set the size MSA_size of the material supply area MSA to the target size while referring to a table showing the relationship between the distance between the material nozzle 212 and the printing surface MS along the Z-axis direction and the size MSA_size of the material supply area MSA, and move the material nozzle 212 so that the distance between the material nozzle 212 and the printing surface MS along the Z-axis direction becomes the target size.
  • the positional relationship between the workpiece W and the stage 31 (particularly, the positional relationship in the Z-axis direction) is known to the control unit 7.
  • the positional relationship between the stage 31 and the modeling surface MS set on the upper surface of the workpiece W or set on the upper surface of the structure layer SL formed on the workpiece W (particularly, the positional relationship in the Z-axis direction) is also known to the control unit 7.
  • the measuring device 83 may measure the distance between the material nozzle 212 and the stage 31 along the Z-axis direction.
  • control unit 7 may measure the distance between the material nozzle 212 and the modeling surface MS along the Z-axis direction based on the measurement result of the measuring device 83 and information related to the positional relationship between the workpiece W and the stage 31, which is information known to the control unit 77.
  • the control unit 7 may control a gas nozzle 218 capable of supplying (typically spraying) gas to the supply path of the modeling material M supplied from the material nozzle 212 in order to control the size MSA_size of the material supply area MSA.
  • the gas nozzle 218 used to control the size MSA_size of the material supply area MSA may be the same as or different from the gas nozzle 217 used to control the position of the material control point MCP described above with reference to FIG. 16.
  • control unit 7 may control (typically change) the size MSA_size of the material supply area MSA by controlling ON/OFF of the gas supply from the gas nozzle 218 to change the material supply direction of the modeling material M from the material nozzle 212.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to a relatively small second size (the size shown in the lower part of FIG. 37) by controlling the gas nozzle 217 to supply gas.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to a relatively small second size (the size shown in the lower part of FIG. 37) by controlling the gas nozzle 217 to stop the supply of gas.
  • the control unit 7 may control the gas nozzle 217 to stop the supply of gas, thereby changing the size MSA_size of the material supply area MSA to the relatively large first size (the size shown at the top of FIG. 37).
  • the control unit 7 may control the gas nozzle 217 to supply gas, thereby changing the size MSA_size of the material supply area MSA to the relatively large first size (the size shown at the top of FIG. 37).
  • control unit 7 may control (typically change) the size MSA_size of the material supply area MSA by controlling the gas supply direction from the gas nozzle 217 to change the material supply direction of the modeling material M from the material nozzle 212.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to a relatively small second size (the size shown in the lower part of FIG. 37) by controlling the gas nozzle 217 to change the gas supply direction.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to a relatively small second size (the size shown in the lower part of FIG. 37) by controlling the gas nozzle 217 to change the gas supply direction.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to the relatively large first size (the size shown at the top of FIG. 37) by controlling the gas nozzle 217 to change the gas supply direction.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to the relatively large first size (the size shown at the top of FIG. 37) by controlling the gas nozzle 217 to change the gas supply direction.
  • control unit 7 may control (typically change) the size MSA_size of the material supply area MSA by controlling the amount of gas supplied from the gas nozzle 217 to change the material supply direction of the modeling material M from the material nozzle 212.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to a relatively small second size (the size shown in the lower part of FIG. 37) by controlling the gas nozzle 217 to change the amount of gas supplied.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to a relatively small second size (the size shown in the lower part of FIG. 37) by controlling the gas nozzle 217 to change the amount of gas supplied.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to the relatively large first size (the size shown in the upper part of Fig. 37) by controlling the gas nozzle 217 to change the amount of gas supplied.
  • the control unit 7 may change the size MSA_size of the material supply area MSA to the relatively large first size (the size shown in the upper part of Fig.
  • control unit 7 may control the supply amount of the modeling material M supplied from the material nozzle 212 in order to control the size MSA_size of the material supply area MSA.
  • control unit 7 may increase the supply amount of the modeling material M to increase the size MSA_size of the material supply area MSA.
  • the control unit 7 may change the supply amount of the modeling material M from a first supply amount to a second supply amount that is greater than the first supply amount, to change the size MSA_size of the material supply area MSA from a relatively small size corresponding to the first supply amount to a relatively large size corresponding to the second supply amount.
  • control unit 7 may reduce the size MSA_size of the material supply area MSA by reducing the supply amount of the modeling material M.
  • control unit 7 may change the size MSA_size of the material supply area MSA from a relatively large size corresponding to the second supply amount to a relatively small size corresponding to the first supply amount by changing the supply amount of the modeling material M from the second supply amount to a first supply amount that is smaller than the second supply amount.
  • the processing system SYS performing the second modeling operation may generate an image IMG by capturing an image of the material irradiation surface ES (i.e., the space between the material nozzle 212 and the modeling surface MS), and perform the second modeling operation based on the generated image IMG.
  • the processing system SYS performing the fifth modified example of the second modeling operation includes an imaging device 84, as shown in FIG. 38, which is a cross-sectional view showing the configuration of the processing system SYS performing the fifth modified example of the second modeling operation.
  • the imaging device 84 will be described, and then the operation performed based on the image IMG generated by the imaging device 84 will be described. (4-5-1) Imaging device 84
  • the imaging device 84 is a camera capable of imaging the material irradiation surface ES.
  • the focus position of the imaging device 84 may be set to the material irradiation surface ES or its vicinity.
  • the exposure of the imaging device 84 may be set to a value suitable for imaging the material irradiation surface ES.
  • the material irradiation surface ES is a virtual surface that intersects with the Z-axis.
  • the material irradiation surface ES itself is not a physical object that can be imaged by the imaging device 84.
  • imaging the material irradiation surface ES may essentially mean imaging an object present on the material irradiation surface ES.
  • the object present on the material irradiation surface ES may include an object supplied to the material irradiation surface ES.
  • the object present on the material irradiation surface ES may include an object passing through the material irradiation surface ES.
  • the object present on the material irradiation surface ES includes at least the modeling material M supplied from the material nozzle 212 to the material irradiation surface ES.
  • the imaging device 84 may image the modeling material M supplied to the material irradiation surface ES by imaging the material irradiation surface ES.
  • the imaging device 84 may image the modeling material M irradiated with the processing light EL on the material irradiation surface ES by imaging the material irradiation surface ES.
  • the imaging device 84 may image the modeling material M not irradiated with the processing light EL on the material irradiation surface ES by imaging the material irradiation surface ES.
  • the imaging device 84 may image the modeling material M melted by irradiation with the processing light EL on the material irradiation surface ES by imaging the material irradiation surface ES.
  • the imaging device 84 may image the modeling material M not melted by irradiation with the processing light EL on the material irradiation surface ES by imaging the material irradiation surface ES.
  • the imaging device 84 may be disposed at any position where the imaging device 84 can image the material irradiation surface MS.
  • the imaging device 84 may be disposed at any position where the imaging device 84 can image the material irradiation surface ES from directly above the material irradiation surface MS.
  • the imaging device 84 may be disposed at any position where the imaging device 84 can image the material irradiation surface ES from above the material irradiation surface MS.
  • the imaging device 84 may be disposed at any position where the imaging device 84 can image the material irradiation surface ES from diagonally above the material irradiation surface MS.
  • the imaging device 84 may be disposed at any position where the imaging device 84 can image the material irradiation surface ES from the side of the material irradiation surface MS.
  • the imaging device 84 may be disposed at any position where the imaging device 84 can image the material irradiation surface ES from directly to the side of the material irradiation surface MS.
  • the imaging device 84 may be disposed in the processing head 21.
  • the imaging device 84 may be attached to the outer surface of the housing of the processing head 21.
  • the imaging device 84 may be disposed in the processing head 21 so that the imaging device 84 is detachable from the processing head 21.
  • the imaging device 84 may be disposed in the processing head 21 so that the imaging device 84 is fixed to the processing head 21.
  • the imaging device 84 may be disposed in the processing head 21 so that the imaging device 84 is integrated with the processing head 21.
  • the imaging device 84 may be movable together with the processing head 21.
  • the head drive system 22 may move the imaging device 84 together with the processing head 21.
  • the head drive system 22 may move the imaging device 84 together with the processing head 21.
  • the imaging device 84 may be disposed in the material nozzle 212 of the processing head 21. As an example, the imaging device 84 may be attached to the outer surface of the material nozzle 212. The imaging device 84 may be disposed in the material nozzle 212 so that the imaging device 84 is detachable from the material nozzle 212. Alternatively, the imaging device 84 may be disposed in the material nozzle 212 so that the imaging device 84 is fixed to the material nozzle 212. The imaging device 84 may be disposed in the material nozzle 212 so that the imaging device 84 is integrated with the material nozzle 212. When the imaging device 84 is disposed in the material nozzle 212, the imaging device 84 may be movable together with the material nozzle 212.
  • At least one of the head drive system 22 and the nozzle drive system 23 may move the imaging device 84 together with the material nozzle 212. At least one of the head drive system 22 and the nozzle drive system 23 may move the imaging device 84 together with the material nozzle 212.
  • the imaging device 84 may be disposed on a support member different from the processing head 21.
  • the imaging device 84 may be disposed on the support member so that the imaging device 84 is detachable from the support member.
  • the imaging device 84 may be disposed on the support member so that the imaging device 84 is fixed to the support member.
  • the imaging device 84 may be disposed on the support member so that the imaging device 84 is integrated with the support member.
  • the processing system SYS may include a drive system for moving the imaging device 84. This drive system may move the imaging device 84 in synchronization with at least one of the movement of the processing head 21 and the movement of the material nozzle 212. This drive system may move the imaging device 84 independently of at least one of the movement of the processing head 21 and the movement of the material nozzle 212.
  • the processing system SYS may further include an illumination device 85 that illuminates the material irradiation surface ES with illumination light IL, as shown in FIG. 39.
  • the illumination device 85 may illuminate an object present on the material irradiation surface ES with illumination light IL.
  • the illumination device 85 may illuminate the modeling material M supplied to the material irradiation surface ES with illumination light IL.
  • the modeling material M supplied to the material irradiation surface ES does not have to be illuminated with illumination light IL.
  • the processing system SYS does not have to include the illumination device 85.
  • the lighting device 85 may illuminate the material irradiation surface ES with sheet-like illumination light IL that is aligned with the material irradiation surface ES.
  • the lighting device 85 may illuminate the material irradiation surface ES with sheet-like illumination light IL that encompasses the material irradiation surface ES.
  • An example of such a lighting device 85 is a sheet light source.
  • the lighting device 85 may illuminate the material irradiation surface ES with sheet-like illumination light IL that is aligned with a surface that intersects with the material irradiation surface ES.
  • the angle between the intersecting surface and the material irradiation surface ES may be an acute angle.
  • the imaging device 84 may capture an image of the modeling material M supplied to the material irradiation surface ES by receiving light from the modeling material M supplied to the material irradiation surface ES with an imaging element provided in the imaging device 84.
  • the light from the modeling material M supplied to the material irradiation surface ES is referred to as "material light ML".
  • the material light ML may include light reflected by the modeling material M.
  • the material light ML may include light scattered by the modeling material M.
  • the material light ML may include light diffracted by the modeling material M.
  • the material light ML may include light transmitted through the modeling material M.
  • the material light ML may include light emitted by the modeling material M.
  • the material light ML may include light generated when the modeling material M melts.
  • the light generated when the modeling material M melts may be referred to as molten material light.
  • the material light ML, which includes the light generated when the modeling material M melts, may be referred to as molten material light.
  • FIG. 39 which is a cross-sectional view showing the optical path of the material light ML
  • at least a part of the optical path of the material light ML may overlap with at least a part of the optical path of the processing light EL emitted from the irradiation optical system 211.
  • the processing head 21 includes a mirror 2192 and a beam splitter 2193.
  • the processing light EL emitted from the irradiation optical system 211 may pass through the beam splitter 2193, and the processing light EL that has passed through the beam splitter 2193 may be irradiated onto the modeling material M supplied to the material irradiation surface ES.
  • the irradiation optical system 211 may emit the processing light EL toward the material irradiation surface ES via the beam splitter 2193, which is an optical member.
  • the material light ML from the modeling material M may be reflected by the beam splitter 2193, and the material light ML reflected by the beam splitter 2193 may be incident on the imaging device 84 via the mirror 2192. That is, the imaging device 84 may receive the material light ML via the beam splitter 2193 through which the processing light EL passes.
  • the optical path of the processing light EL between the beam splitter 2193 and the material irradiation surface ES overlaps with the optical path of the material light ML between the beam splitter 2193 and the material irradiation surface ES.
  • at least a portion of the optical path of the material light ML does not have to overlap with at least a portion of the optical path of the processing light EL emitted from the irradiation optical system 211.
  • the processing light EL emitted from the irradiation optical system 211 (specifically, emitted from the f ⁇ lens 2162) is incident on the beam splitter 2193. That is, the beam splitter 2193 is arranged on the optical path of the processing light EL emitted from the irradiation optical system 211 (specifically, emitted from the f ⁇ lens 2162). In other words, the beam splitter 2193 is arranged on the optical path of the processing light EL between the material irradiation surface ES and the irradiation optical system 211 (particularly, the f ⁇ lens 2162).
  • the beam splitter 2193 may be arranged so that the f ⁇ lens 2162 (or a part of the irradiation optical system 211) is arranged on the optical path of the processing light EL between the material irradiation surface ES and the beam splitter 2193.
  • the processing light EL emitted from the beam splitter 2193 may be incident on the f ⁇ lens 2162, and the processing light EL emitted from the f ⁇ lens 2162 may be irradiated onto the material irradiation surface ES.
  • the material light ML from the modeling material M may be incident on the beam splitter 2193 via the f ⁇ lens 2162.
  • the processing light EL emitted from the irradiation optical system 211 may travel through a space at least partially surrounded by the modeling material M supplied from the material nozzle 212.
  • the material light ML may also travel through a space at least partially surrounded by the modeling material M supplied from the material nozzle 212.
  • the material light ML may travel through a conical space whose outer edge is the modeling material M supplied from the material nozzle 212.
  • the material light ML may travel through a space sandwiched between the modeling material M supplied from the first supply port portion 2122 (see FIG. 4(a) to FIG. 4(c)) of the material supply port 2121 and the modeling material M supplied from the second supply port portion 2123 (see FIG. 4(a) to FIG. 4(c)) of the material supply port 2121.
  • the material light ML is less likely to be blocked by the modeling material M compared to when the material light ML travels through a space outside the space at least partially surrounded by the modeling material M supplied from the material nozzle 212. Therefore, the imaging device 84 can properly receive the material light ML without being affected by the modeling material M. In other words, the imaging device 84 can properly image the modeling material M supplied to the material irradiation surface ES without being affected by the modeling material M.
  • the image IMG generated by the imaging device 84 reflects the modeling material M.
  • the image IMG may reflect the modeling material M supplied to the material irradiation surface ES.
  • the image IMG may reflect the modeling material M irradiated with the processing light EL on the material irradiation surface ES.
  • the image IMG may reflect the modeling material M melted by irradiation with the processing light EL on the material irradiation surface ES.
  • the image IMG reflecting the modeling material M is referred to as the material image IMG_M.
  • the material image IMG_M at least captures the shaping material M that has been melted by irradiation of the processing light EL on the material irradiation surface ES.
  • the imaging device 84 captures at least an image of the shaping material M that has been melted by irradiation of the processing light EL on the material irradiation surface ES.
  • the material image IMG_M in which the molten shaping material M is captured may be referred to as a molten material image.
  • the molten shaping material M will be referred to as the molten material MM.
  • the material image IMG_M captured by the imaging device 84 is output from the imaging device 84 to the control unit 7.
  • the control unit 7 may control the processing system SYS (particularly, at least one of the processing unit 2 and the stage unit 3) to perform a modeling operation (particularly, the second modeling operation) based on the material image IMG_M output from the imaging device 84.
  • the control unit 7 may control the irradiation mode (e.g., intensity) of the processing light EL based on the material image IMG_M.
  • the control of the irradiation mode of the processing light EL may include control of at least one of the intensity of the processing light EL within the material irradiation surface ES, the movement of the processing light EL within the material irradiation surface ES, the cross-sectional shape of the processing light EL within the material irradiation surface ES, the cross-sectional size of the processing light EL within the material irradiation surface ES, the movement speed of the processing light EL within the material irradiation surface ES, and the movement path (movement trajectory) of the processing light EL within the material irradiation surface ES.
  • the control of the irradiation mode of the processing light EL may include control of at least one of the galvanometer mirrors 2146 and 2156 used to irradiate the irradiation unit area MUA in the material irradiation surface ES with the processing light EL.
  • the control of at least one of the galvanometer mirrors 2146 and 2156 may include control of a scanning mirror (for example, at least one of the X-scanning mirror 2146MX, the Y-scanning mirror 2146MY, the X-scanning mirror 2156MX, and the Y-scanning mirror 2156MY) provided in at least one of the galvanometer mirrors 2146 and 2156.
  • the control of the scanning mirror may include control of at least one of the rotation frequency (in other words, the oscillation frequency) and the rotation speed (in other words, the oscillation speed) of the scanning mirror.
  • the control unit 7 may control the movement mode of at least one of the processing head 21, the material nozzle 212, and the stage 32 based on the material image IMG_M.
  • the movement mode may include at least one of the movement speed, the movement amount, the movement direction, and the movement timing.
  • the control unit 7 may control the supply manner of the modeling material M from the material nozzle 212 based on the material image IMG_M.
  • the supply manner may include at least one of the supply speed, the supply amount, the supply direction, and the supply timing.
  • the control unit 7 may control the processing system SYS (particularly, at least one of the processing unit 2 and the stage unit 3) based on information about the molten material MM reflected in the material image IMG_M.
  • the control unit 7 may control the processing system SYS (particularly, at least one of the processing unit 2 and the stage unit 3) based on information on the molten material MM included in the material image IMG_M and information on the non-molten material included in the material image IMG_M.
  • control unit 7 may acquire the material image IMG_M including the molten material MM and the material image IMG_M including the non-molten material, and control the processing system SYS (particularly, at least one of the processing unit 2 and the stage unit 3) based on the material image IMG_M including the molten material MM and the material image IMG_M including the non-molten material.
  • control the processing system SYS particularly, at least one of the processing unit 2 and the stage unit 3
  • the processing system SYS particularly, at least one of the processing unit 2 and the stage unit 3
  • a specific example of an operation performed based on the material image IMG_M generated by the imaging device 84 will be further described below. (4-5-2) Specific examples of operations performed based on the material image IMG_M
  • the control unit 7 may perform an imaging position control operation to control the position of the imaging device 84 based on the material image IMG_M.
  • the control unit 7 may control the position of the imaging device 84 along at least one of the X-axis direction, the Y-axis direction, and the Z-axis direction based on the material image IMG_M.
  • the control unit 7 may control the position of the imaging device 84 along at least one of the ⁇ X direction, the ⁇ Y direction, and the ⁇ Z direction based on the material image IMG_M.
  • the control unit 7 may control the attitude of the imaging device 84 around at least one of the X-axis, Y-axis, and Z-axis based on the material image IMG_M.
  • control unit 7 may perform a molten material feedback control operation based on the material image IMG_M, in addition to or instead of the imaging position control operation, as a specific example of an operation performed based on the material image IMG_M.
  • the molten material feedback control operation is an operation that controls the processing unit 2 based on the material image IMG_M so that the size of the molten material area MMA in the material image IMG_M becomes the target size TS.
  • the molten material area MMA will be described in detail later.
  • the control unit 7 may perform a molten material feedback control operation during at least a portion of the modeling period in which the processing system SYS performs a modeling operation (particularly, the second modeling operation).
  • the processing system SYS may perform a modeling operation (particularly, the second modeling operation) and a molten material feedback operation in parallel.
  • the control unit 7 may perform a molten material feedback control operation in real time during at least a portion of the modeling period in which the processing system SYS performs a modeling operation (particularly, the second modeling operation).
  • Figure 40 is a flowchart showing the flow of the molten material feedback control operation.
  • the control unit 7 acquires a material image IMG_M from the imaging device 84 (step S11). Specifically, the imaging device 84 captures an image of the modeling material M supplied from the material nozzle 212 to the material irradiation surface ES. As a result, the imaging device 84 generates a material image IMG_M that captures the modeling material M supplied from the material nozzle 212 to the material irradiation surface ES (in particular, the molten material MM). The imaging device 84 outputs the generated material image IMG_M to the control unit 7. As a result, the control unit 7 acquires the material image IMG_M.
  • the imaging device 84 images the material irradiation surface ES so that the modeling material M supplied from the material nozzle 212 to the material irradiation surface ES falls within the imaging range of the imaging device 84.
  • the modeling material M is supplied to the material supply area MSA within the material irradiation surface ES. Therefore, the imaging device 84 may be aligned with the material irradiation surface ES to which the modeling material M is supplied so that the material supply area MSA falls within the imaging range of the imaging device 84.
  • the imaging device 84 can properly image the modeling material M supplied from the material nozzle 212 to the material irradiation surface ES.
  • the galvanometer mirrors 2146 and 2156 move the processing light EL within the material irradiation surface ES. Specifically, the galvanometer mirrors 2146 and 2156 move the beam passing area PA through which the processing light EL passes within the material irradiation surface ES. As a result, the area within the material irradiation surface ES where the processing light EL is irradiated onto the forming material M also moves within the material irradiation surface ES. In other words, the area within the material irradiation surface ES where the molten material MM is generated also moves within the material irradiation surface ES.
  • the imaging device 84 may image the material irradiation surface ES so that the movement range of the molten material MM within the material irradiation surface ES falls within the imaging range of the imaging device 84.
  • the imaging device 84 may image the material irradiation surface ES so that the irradiation unit area MUA, which is the movement range within which the processing light EL moves within the material irradiation surface ES, falls within the imaging range of the imaging device 84.
  • the imaging device 84 may be aligned with the material irradiation surface ES to which the modeling material M is supplied so that the movement range of the molten material MM within the material irradiation surface ES (i.e., the irradiation unit area MUA) falls within the imaging range of the imaging device 84.
  • the imaging device 84 can properly image the molten material MM moving within the irradiation unit area MUA.
  • the imaging device 84 may repeatedly capture images of the material irradiation surface ES to which the modeling material M is supplied at a predetermined imaging rate. In other words, the imaging device 84 may capture images of the material irradiation surface ES to which the modeling material M is supplied multiple times in succession at a predetermined imaging rate.
  • the imaging rate may be an index value indicating the number of times the imaging device 84 captures images of the material irradiation surface ES per unit time (e.g., per second). In other words, the imaging device 84 may repeatedly capture images of the material irradiation surface ES each time a predetermined imaging period has elapsed.
  • the imaging device 84 may capture images of the material irradiation surface ES at a first time, and then capture images of the material irradiation surface ES at a second time when a predetermined imaging period has elapsed from the first time.
  • the imaging period may be the reciprocal of the imaging rate.
  • the imaging device 84 may generate multiple material images IMG_M as time-series data.
  • the control unit 7 may acquire multiple material images IMG_M as time-series data.
  • the galvanometer mirror 2146 or 2156 may move the beam passing area PA within the irradiation unit area MUA (i.e., may move the processing light EL).
  • the imaging device 84 may image the molten material MM formed at a first position within the material irradiation surface ES at a first time, and then image the molten material MM formed at a second position within the material irradiation surface ES different from the first position at a second time different from the first time.
  • the imaging device 84 may image the molten material MM that appears at a first position within the material irradiation surface ES at a first time, and then image the molten material MM that appears at a second position within the material irradiation surface ES at a second time.
  • the multiple material images IMG_M generated by the imaging device 84 may include a material image IMG_M in which the molten material MM formed at a first position in the material irradiation surface ES is reflected, and a material image IMG_M in which the molten material MM formed at a second position in the material irradiation surface ES is reflected.
  • the multiple material images IMG_M may include a material image IMG_M showing the molten material MM formed at a first position in the material irradiation surface ES, and a material image IMG_M showing the molten material MM formed at a second position in the material irradiation surface ES.
  • the multiple material images IMG_M may include a material image IMG_M generated by imaging the molten material MM formed at the first position in the material irradiation surface ES, and a material image IMG_M generated by imaging the molten material MM formed at the second position in the material irradiation surface ES.
  • the imaging device 84 may be considered to be exposing the imaging element multiple times with light from the material irradiation surface ES (e.g., the material light ML described above).
  • the multiple exposures of the imaging element may be referred to as multiple exposures. That is, the imaging device 84 may generate multiple material images IMG_M as time-series data by performing multiple exposures of the imaging element. In other words, the imaging device 84 may generate multiple material images IMG_M as time-series data by performing multiple exposures of the molten material MM using the imaging element. That is, the imaging device 84 may generate multiple material images IMG_M as a result of the multiple exposures by performing multiple exposures of the molten material MM using the imaging element.
  • the imaging device 84 may expose the imaging element multiple times with light from the material irradiation surface ES (e.g., the above-mentioned material light ML) in one imaging operation for imaging one material image IMG_M.
  • the multiple exposures in one imaging operation for imaging one material image IMG_M of the imaging element may be referred to as multiple exposures. That is, the imaging device 84 may generate one material image IMG_M by performing multiple exposures of the imaging element.
  • the imaging device 84 may generate multiple material images IMG_M as time-series data by repeatedly performing multiple exposures of the imaging element to generate one material image IMG_M. That is, the imaging device 84 may perform multiple exposures of the molten material MM by the imaging element to generate multiple material images IMG_M as a result of the multiple exposures.
  • control unit 7 generates molten material image information MMI based on at least one material image IMG_M acquired in step S11 (step S12).
  • the molten material image information MMI is information about the molten material MM that is reflected in the material image IMG_M.
  • the control unit 7 may generate information about the molten material area MMA as an example of the molten material image information MMI.
  • the molten material area MMA may include an area in which the molten material MM is reflected in the material image IMG_M, as shown in FIG. 41 showing the material image IMG_M.
  • control unit 7 may use at least two of the multiple material images IMG_M acquired as time-series data in step S11. In other words, the control unit 7 may generate information about the molten material area MMA using multiple material images IMG_M that correspond to at least a portion of the multiple material images IMG_M acquired as time-series data in step S11.
  • the left side of FIG. 42 shows multiple material images IMG_M acquired as time-series data.
  • the position at which the molten material MM is reflected may change between multiple material images IMG_M.
  • the imaging device 84 may capture the molten material MM formed at a first position in the material irradiation surface ES at a first time, and then capture the molten material MM formed at a second position in the material irradiation surface ES different from the first position at a second time different from the first time.
  • the exposure time of the imaging device 84 is shorter than a certain time, the position at which the molten material MM is reflected may change between multiple material images IMG_M.
  • control unit 7 may generate an additive image IMG_C by adding at least two consecutive material images IMG_M out of the multiple material images IMG_M acquired in step S11, as shown in FIG. 42, in order to generate information regarding the molten material region MMA.
  • control unit 7 may generate an additive image IMG_C by combining at least two consecutive material images IMG_M.
  • the additive image IMG_C may be referred to as a composite image.
  • the control unit 7 may add at least two successive material images IMG_M on a pixel-by-pixel basis.
  • the control unit 7 may add the signal values of at least two successive material images IMG_M on a pixel-by-pixel basis.
  • An example of the signal value of the material image IMG_M is a value related to brightness (i.e., brightness value).
  • the number of added frames which is the number of material images IMG_M to be added, may be set in advance.
  • the number of added frames, which is the number of material images IMG_M to be added may be set as appropriate by the control unit 7.
  • the number of added frames, which is the number of material images IMG_M to be added may be set as appropriate by the user of the processing system SYS.
  • the additive image IMG_C may be an image in which the signal value of each pixel of the additive image IMG_C is the sum of the signal values of each pixel of the at least two added material images IMG_M.
  • the additive image IMG_C may be an image in which the signal value of the pixel in the xth row and yth column of the additive image IMG_C is the sum of the signal values of the pixel in the xth row and yth column of the at least two added material images IMG_M.
  • x is a variable that is 1 or more and indicates an integer that is less than or equal to the total number of pixels in the horizontal direction of each of the additive image IMG_C and material image IMG_M.
  • y is a variable that is 1 or more and indicates an integer that is less than or equal to the total number of pixels in the vertical direction of each of the additive image IMG_C and material image IMG_M.
  • the additive image IMG_C may be an image in which the signal value of each pixel of the additive image IMG_C is the average value of the signal values of each pixel of the at least two added material images IMG_M.
  • the additive image IMG_C may be an image in which the signal value of the pixel in the xth row and yth column of the additive image IMG_C is the average value of the signal values of the pixel in the xth row and yth column of the at least two added material images IMG_M (i.e., a value obtained by dividing the sum of the signal values by the number of added frames).
  • control unit 7 may generate the additive image IMG_C by calculating the sum of the signal values of each pixel of the at least two material images IMG_M and then dividing the calculated sum by the number of added frames.
  • control unit 7 may generate the additive image IMG_C by dividing the signal value of each pixel of the at least two material images IMG_M by the number of added frames and then calculating the sum of the signal values of each pixel.
  • the additive image IMG_C may be an image in which the signal value of each pixel of the additive image IMG_C is the moving average value of the signal values of each pixel of at least two added material images IMG_M.
  • the control unit 7 may generate the additive image IMG_C by calculating the moving average value of the signal values of each pixel of at least two most recently acquired material images IMG_M.
  • the control unit 7 may generate a first additive image IMG_C by calculating the moving average value of the signal values of each pixel of ten material images IMG_M to which the first frame to the tenth frame are assigned as indexes, and then generate a second additive image IMG_C by calculating the moving average value of the signal values of each pixel of ten material images IMG_M to which the second frame to the eleventh frame are assigned as indexes, and then generate a third additive image IMG_C by calculating the moving average value of the signal values of each pixel of ten material images IMG_M to which the third frame to the twelfth frame are assigned as indexes. Thereafter, the control unit 7 may generate the additive image IMG_C in a similar manner.
  • the control unit 7 typically acquires the material image IMG_M represented by a digital signal from the imaging device 84.
  • the control unit 7 may add the multiple material images IMG_M by adding multiple digital signals representing the multiple material images IMG_M, respectively.
  • the control unit 7 may add the multiple material images IMG_M by adding multiple digital signals using an adder (i.e., an adder as hardware) that adds input digital signals.
  • the control unit 7 may add the multiple material images IMG_M by expanding the digital signals in a buffer and then adding the digital signals expanded in the buffer (i.e., adding the digital signals as software processing).
  • control unit 7 may perform a predetermined image processing on the multiple material images IMG_M, and then add the multiple digital signals representing the multiple material images IMG_M that have been subjected to the predetermined image processing, thereby adding the multiple material images IMG_M.
  • the specified signal processing include at least one of gamma processing, noise reduction processing, and HDR (High Dynamic Range) processing.
  • control unit 7 may acquire a material image IMG_M represented by an analog signal from the imaging device 84.
  • the control unit 7 may add multiple material images IMG_M by adding multiple analog signals respectively representing the multiple material images IMG_M.
  • the control unit 7 may convert the analog signal into a digital signal. Thereafter, the control unit 7 may add multiple material images IMG_M by adding multiple digital signals respectively representing the multiple material images IMG_M, similar to the case of acquiring a material image IMG_M represented by a digital signal from the imaging device 84.
  • the control unit 7 may detect a molten material area MMA in which the molten material MM is reflected in the additive image IMG_C. Specifically, as shown on the left side of FIG. 42, the signal value of the area in which the molten material MM is reflected in the material image IMG_M is different from the signal value of the area in which the molten material MM is not reflected. This is because the molten material MM emits strong light due to the physical phenomenon of melting. Therefore, the luminance value of the area in which the molten material MM is reflected in the material image IMG_M is different from the luminance value of the area in which the molten material MM is not reflected.
  • the luminance value of the area in which the molten material MM is reflected in the material image IMG_M is higher than the luminance value of the area in which the molten material MM is not reflected. Therefore, as shown on the right side of FIG. 42, the signal value of the area in which the molten material MM is reflected in the additive image IMG_C is also different from the signal value of the area in which the molten material MM is not reflected. That is, in the additive image IMG_C, the signal value of the molten material region MMA is different from the signal values of regions other than the molten material region MMA.
  • the control unit 7 may detect the molten material region MMA in the additive image IMG_C by comparing the signal value (e.g., brightness value) of each pixel of the additive image IMG_C with a predetermined signal threshold value.
  • control unit 7 may detect pixels in the additive image IMG_C that have a signal value (e.g., luminance value) that is greater than a predetermined signal threshold.
  • control unit 7 may detect pixels in the additive image IMG_C whose added signal value (e.g., luminance value) is greater than a predetermined signal threshold.
  • control unit 7 may detect an area that includes the detected pixel as the molten material area MMA.
  • the control unit 7 may set the signal value of a pixel in the additive image IMG_C having a signal value (e.g., luminance value) greater than a predetermined signal threshold to a first signal value.
  • the control unit 7 may set the signal value of a pixel in the additive image IMG_C having a signal value (e.g., luminance value) less than a predetermined signal threshold to a second signal value (e.g., 0) different from the first signal value. That is, the control unit 7 may perform a binarization process on the additive image IMG_C. Thereafter, the control unit 7 may detect an area including pixels whose signal value is the first signal value as the molten material area MMA. That is, the control unit 7 may detect the molten material area MMA using the additive image IMG_C that has been subjected to the binarization process.
  • a signal value e.g., luminance value
  • a second signal value e.g., 0
  • a signal value of "1" may be used as the first signal value
  • a signal value of "0" may be used as the second signal value. That is, the control unit 7 may set the signal value of a pixel in the additive image IMG_C having a signal value greater than a predetermined signal threshold to 1. On the other hand, the control unit 7 may set the signal value of a pixel in the additive image IMG_C having a signal value less than a predetermined signal threshold to 0. The control unit 7 may then detect the region including the pixel with the signal value of 1 as the molten material region MMA.
  • the signal threshold may be set to an appropriate value that allows the molten material region MMA to be distinguished from a region other than the molten material region MMA from a signal value (e.g., a brightness value).
  • the signal threshold may be set in advance.
  • the signal threshold may be set as appropriate by the control unit 7.
  • the signal threshold may be set as appropriate by a user of the processing system SYS.
  • the molten material area MMA detected in the additive image IMG_C may be considered to be substantially equivalent to the area through which the molten material MM has moved.
  • the molten material area MMA detected in the additive image IMG_C may be considered to be substantially equivalent to the area through which the molten material MM has moved during the period in which the at least two material images IMG_M used to generate the additive image IMG_C were captured.
  • the molten material area MMA may refer to the area through which the molten material MM has moved.
  • the molten material area MMA detected in the additive image IMG_C may be considered to be substantially equivalent to the area where the processing system SYS continuously forms the molten material MM at different positions. Therefore, the molten material area MMA may mean the area where the processing system SYS continuously forms the molten material MM at different positions.
  • the material image IMG_M may also include unmelted modeling material M.
  • the material image IMG_M may include modeling material M that has been irradiated with processing light EL but has not melted.
  • the material image IMG_M may include modeling material M that has not been irradiated with processing light EL and therefore has not melted.
  • the signal value of the area in the material image IMG_M where the unmelted modeling material M is reflected is different from the signal value of the area where the modeling material M is not reflected in the first place.
  • the brightness value of the area in the material image IMG_M where the modeling material M is reflected is typically higher than the brightness value of the area where the modeling material M is not reflected in the first place.
  • the signal threshold used to detect the molten material area MMA at least a portion of the area in the material image IMG_M in which the unmelted modeling material M is reflected may be erroneously detected as the molten material area MMA in which the molten material MM is reflected.
  • the illumination device 85 may illuminate the material irradiation surface ES with illumination light IL having a wavelength different from the wavelength of the molten material light, which is the material light ML from which the molten material MM is generated.
  • the state in which the wavelength of the molten material light and the wavelength of the illumination light IL are different may include a state in which the peak wavelength of the molten material light and the peak wavelength of the illumination light IL are different.
  • the peak wavelength of the illumination light IL may be a wavelength different from 800 nm (for example, 600 nm).
  • the imaging device 84 may capture the material irradiation surface ES through a filter that allows light components with the same wavelength as the wavelength of the molten material light to pass, while blocking light components with wavelengths different from the wavelength of the molten material light.
  • the molten material MM is reflected in the material image IMG_M in a state in which the molten material MM and the unmelted modeling material M can be clearly distinguished from each other.
  • the control unit 7 can appropriately detect the molten material area MMA that is likely to include an area in which the molten material MM is reflected, but is unlikely to include an area in which the unmelted modeling material M is reflected.
  • the control unit 7 may generate information about the molten material area MMA as molten material image information MMI based on the detection result of the molten material area MMA.
  • the control unit 7 may generate information about the size of the molten material area MMA as an example of the information about the molten material area MMA.
  • the control unit 7 may calculate the area of the molten material area MMA and generate information about the calculated area of the molten material area MMA as information about the size of the molten material area MMA. In this case, the control unit 7 may calculate the number of pixels constituting the molten material area MMA as the area of the molten material area MMA.
  • control unit 7 may generate information about the size of the molten material area MMA by calculating the number of pixels having a signal value (e.g., a luminance value) greater than a predetermined signal threshold based on the added image IMG_C.
  • a signal value e.g., a luminance value
  • the control unit 7 may use a single material image IMG_M to generate information about the molten material area MMA. Specifically, the control unit 7 may detect the molten material area MMA in the material image IMG_M by comparing the signal value (e.g., luminance value) of each pixel of the material image IMG_M with a predetermined signal threshold. For example, the control unit 7 may detect a pixel in the material image IMG_M that has a signal value (e.g., luminance value) that is greater than a predetermined signal threshold. In this case, the control unit 7 may detect the area including the detected pixel as the molten material area MMA. Thereafter, the control unit 7 may generate information about the molten material area MMA as molten material image information MMI based on the detection result of the molten material area MMA.
  • the signal value e.g., luminance value
  • the exposure time of the imaging device 84 is longer than a certain time, there is a high possibility that a molten material area MMA similar to the molten material area MMA reflected in the additive image IMG_C will be reflected in one material image IMG_M.
  • the exposure time of the imaging device 84 is longer than a certain time determined according to the period of the periodic movement of the molten material MM, there is a high possibility that a molten material area MMA similar to the molten material area MMA reflected in the additive image IMG_C will be reflected in one material image IMG_M.
  • the control unit 7 may generate the molten material image information MMI using a single material image IMG_M without using multiple material images IMG_M.
  • this fixed time may be the period required for one period of the periodic movement of the molten material MM (i.e., the periodic movement of the beam passing area PA within the irradiation unit area MUA).
  • This fixed time may be half the period required for one period of the periodic movement of the molten material MM. This fixed time may be 1/3 of the period required for one period of the periodic movement of the molten material MM.
  • the control unit 7 may generate the molten material image information MMI using a single material image IMG_M in which the molten material area MMA is captured.
  • the exposure time of the imaging device 84 may mean the time during which the imaging element of the imaging device 84 is exposed to light.
  • the exposure time of the imaging device 84 may mean the time during which the mechanical shutter is in an open state.
  • the exposure time of the imaging device 84 may mean the time from when the mechanical shutter is switched to an open state to when the mechanical shutter is switched to a closed state.
  • the open state may mean the state in which the mechanical shutter is open.
  • the closed state may mean the state in which the mechanical shutter is closed.
  • the exposure time of the imaging device 84 may mean the time during which the electronic shutter is in an on state.
  • the exposure time of the imaging device 84 may mean the time from when the electronic shutter is switched to an on state to when the electronic shutter is switched to an off state.
  • the on state may mean the state in which the electronic shutter is on.
  • the state in which the electronic shutter is on may refer to a state in which each pixel of the image sensor is exposed to light in one image capture and each pixel of the image sensor can accumulate charge based on the amount of light.
  • the imaging device 84 may open and close the mechanical shutter multiple times at a timing synchronized with the imaging rate described above. Even in this case, the imaging device 84 may be considered to be performing multiple exposure. The imaging device 84 may then read out the charges accumulated in each pixel of the imaging element. Even in this case, there is a high possibility that a molten material area MMA similar to the molten material area MMA reflected in the additive image IMG_C will be reflected in a single material image IMG_M generated by the imaging device 84. Therefore, the control unit 7 may generate molten material image information MMI using a single material image IMG_M in which the molten material area MMA is reflected.
  • the imaging device 84 may turn the electronic shutter on and off multiple times at a timing synchronized with the imaging rate described above. Even in this case, the imaging device 84 may be considered to be performing multiple exposure. After that, the imaging device 84 may read out the charge accumulated in each pixel of the imaging element. Even in this case, it is highly likely that a molten material area MMA similar to the molten material area MMA reflected in the additive image IMG_C will be reflected in one material image IMG_M generated by the imaging device 84. For this reason, the control unit 7 may generate the molten material image information MMI using a single material image IMG_M in which the molten material area MMA is reflected.
  • the imaging device 84 may read out the charge accumulated in each pixel of the imaging element each time the electronic shutter is turned on and off.
  • the imaging device 84 may be considered to be generating multiple material images IMG_M as time-series data in effect.
  • the imaging device 84 may be considered to function as a measurement device that acquires information about the molten material MM.
  • the imaging device 84 may be considered to function as a measurement device that measures the modeling material M at the material irradiation surface ES (i.e., the space between the material nozzle 212 and the modeling surface MS).
  • the control unit 7 may be considered to control the processing system SYS (e.g., processing unit 2) based on the measurement results (e.g., material image IMG_M) of the imaging device functioning as a measurement device.
  • the processing system SYS may be provided with any measuring device different from the imaging device 84 in addition to or instead of the imaging device 84 and capable of measuring the modeling material M at the material irradiation surface ES (i.e., the space between the material nozzle 212 and the modeling surface MS).
  • the control unit 7 may control the processing system SYS (e.g., the processing unit 2) based on the measurement results of the any measuring device.
  • control unit 7 controls the processing system SYS (e.g., processing unit 2) based on the molten material image information MMI generated in step S12 (step S13).
  • the control unit 7 controls the processing system SYS (e.g., processing unit 2) based on the molten material image information MMI so that the size of the molten material area MMA becomes a predetermined target size TS.
  • the control of the processing unit 2 may include control of the irradiation mode of the processing light EL.
  • the control of the irradiation mode of the processing light EL may include control of at least one of the intensity of the processing light EL, the movement of the processing light EL, the cross-sectional shape of the processing light EL, the cross-sectional size of the processing light EL, the moving speed of the processing light EL, the moving path (movement trajectory) of the processing light EL, on/off control of the processing light EL, the duty ratio of the processing light EL, and the distance between the focus position CP of the processing light EL and the printing surface MS.
  • control of the processing unit 2 may include control of at least one of the intensity of the processing light EL, the movement of the processing light EL, the cross-sectional shape of the processing light EL, the cross-sectional size of the processing light EL, the moving speed of the processing light EL, the moving path (movement trajectory) of the processing light EL, on/off control of the processing light EL, the duty ratio of the processing light EL, and the distance between the focus position CP of the processing light EL and the printing surface MS.
  • control of the irradiation mode of the processing light EL may include control of at least one of the intensity of the processing light EL within the material irradiation surface ES, the movement of the processing light EL within the material irradiation surface ES, the cross-sectional shape of the processing light EL within the material irradiation surface ES, the cross-sectional size of the processing light EL within the material irradiation surface ES, the moving speed of the processing light EL within the material irradiation surface ES, and the moving path (moving trajectory) of the processing light EL within the material irradiation surface ES.
  • control of the processing unit 2 may include control of at least one of the intensity of the processing light EL within the material irradiation surface ES, the movement of the processing light EL within the material irradiation surface ES, the cross-sectional shape of the processing light EL within the material irradiation surface ES, the cross-sectional size of the processing light EL within the material irradiation surface ES, the moving speed of the processing light EL within the material irradiation surface ES, and the moving path (moving trajectory) of the processing light EL within the material irradiation surface ES.
  • control unit 7 may control the intensity of the processing light EL emitted by the light source 4 so that the size of the molten material area MMA becomes a predetermined target size TS. That is, the control unit 7 may perform DC modulation control to control the DC component of the intensity of the processing light EL. That is, when the intensity of the processing light EL changes, the size of the molten material MM changes. For example, the higher the intensity of the processing light EL, the greater the amount of modeling material M melted by the processing light EL. Therefore, the higher the intensity of the processing light EL, the larger the size of the molten material MM becomes.
  • control unit 7 can control the size of the molten material area MMA by controlling the intensity of at least one of the processing lights EL.
  • the control unit 7 may control the amount of heat input transferred from the processed light EL to the shaping material M by controlling the irradiation mode of the processed light EL that is different from the intensity of the processed light EL so that the size of the molten material area MMA becomes the predetermined target size TS.
  • control unit 7 may control at least one of the galvanometer mirrors 2146 and 2156 that move the molten material MM so that the size of the molten material area MMA becomes a predetermined target size TS.
  • the range over which at least one of the galvanometer mirrors 2146 and 2156 moves the molten material MM i.e., the range over which at least one of the galvanometer mirrors 2146 and 2156 moves the beam passing area PA
  • the control unit 7 can control the size of the molten material area MMA by controlling at least one of the galvanometer mirrors 2146 and 2156.
  • the operation of controlling the processing system SYS so that the size of the molten material area MMA becomes the target size TS may include an operation of controlling the processing system SYS so that the difference between the size of the molten material area MMA and the target size TS becomes small.
  • the operation of controlling the processing system SYS so that the size of the molten material area MMA becomes the target size TS may include an operation of controlling the processing system SYS so that the size of the molten material area MMA becomes closer to the target size TS.
  • the operation of controlling the processing system SYS so that the size of the molten material area MMA becomes the target size TS may include an operation of controlling the processing system SYS so that the difference between the size of the molten material area MMA and the target size TS becomes zero.
  • the operation of controlling the processing system SYS so that the size of the molten material area MMA becomes the target size TS may include an operation of controlling the processing system SYS so that the size of the molten material area MMA becomes the target size TS.
  • the control unit 7 may be regarded as performing feedback control of the processing system SYS based on the size of the molten material area MMA.
  • the size of the molten material area MMA is maintained at the target size TS.
  • the molten material area MMA corresponds to the area in the material irradiation surface ES where the molten material MM moves.
  • the molten material area MMA corresponds to the area in the material irradiation surface ES where the molten material MM is distributed.
  • the size of the molten material area MMA is substantially correlated with the size of the irradiation unit area MUA where the molten material MM moves.
  • the size of each of the irradiation unit areas MUA is also maintained at a size corresponding to the target size TS.
  • the size (typically, width) of the linear object formed on the forming surface MS by moving the irradiation unit area MUA on the material irradiation surface ES is also maintained at a size corresponding to the target size TS.
  • the size of the linear object is correlated with the size of the irradiation unit area MUA.
  • the size of the linear object increases as the size of the irradiation unit area MUA increases.
  • the processing system SYS can form a linear object having a desired size (typically, a desired width) by performing a molten material feedback control operation.
  • a desired size typically, a desired width
  • the processing system SYS is less likely to erroneously form a linear object having a size different from the desired size. Therefore, the processing system SYS can form an object with high modeling accuracy.
  • the distribution of the modeling material M supplied from the material nozzle 212 to the material irradiation surface ES can be obtained from the imaging results (material image) of the imaging device 84, so the control unit 7 may control the irradiation mode of the processing light EL based on the imaging results (material image) of the imaging device 84 to perform the second modified example of the second modeling operation described above, particularly the first and second specific examples of the beam control operation.
  • the control unit 7 generates molten material image information MMI that is correlated with the size of the irradiation unit area MUA by adding at least two material images IMG_M.
  • the control unit 7 may calculate an index value that is correlated with the size of the irradiation unit area MUA (i.e., the size of the area through which the molten material MM moves within the material irradiation surface ES) from at least two material images IMG_M without adding at least two material images IMG_M.
  • the control unit 7 may control the processing system SYS in step S13 of FIG. 40 so that the calculated index value becomes the above-mentioned target size TS (or a value corresponding to the target size TS).
  • control unit 7 may calculate the size of at least two pieces of molten material MM that are respectively reflected in at least two material images IMG_M. For example, the control unit 7 may calculate the size of the molten material MM that is reflected in the first material image IMG_M, and may also calculate the size of the molten material MM that is reflected in a second material image IMG_M that is different from the first material image IMG_M. The control unit 7 may then add up the calculated sizes of at least two pieces of molten material MM.
  • control unit 7 may add up the size of the molten material MM that is reflected in the first material image IMG_M and the size of the molten material MM that is reflected in the second material image IMG_M.
  • the value obtained by adding up the sizes of at least two pieces of molten material MM may be used as an index value that is correlated with the size of the irradiation unit area MUA (i.e., the size of the area in the material irradiation surface ES where the molten material MM moves).
  • control unit 7 may calculate the positions of at least two molten materials MM that are respectively reflected in at least two material images IMG_M. For example, the control unit 7 may calculate the position of the molten material MM that is reflected in the first material image IMG_M, and may also calculate the position of the molten material MM that is reflected in a second material image IMG_M that is different from the first material image IMG_M. After that, the control unit 7 may calculate the size of the irradiation unit area MUA (i.e., the size of the area in which the molten material MM moves) based on the calculated positions of at least two molten materials MM.
  • the control unit 7 may calculate the size of the irradiation unit area MUA (i.e., the size of the area in which the molten material MM moves) based on the calculated positions of at least two molten materials MM.
  • the control unit 7 may calculate the positions of both ends in one direction of the area in which the molten material MM moves based on the calculated position of the molten material MM. For example, the control unit 7 may calculate the position where the coordinates indicating the position of the molten material MM are maximum and the position where the coordinates indicating the position of the molten material MM are minimum as the positions of both ends in one direction of the area where the molten material MM moves.
  • control unit 7 may calculate the distance between the calculated positions of both ends as an index value that is correlated with the size of the irradiation unit area MUA (i.e., the size of the area where the molten material MM moves in the material irradiation surface ES). In this case, the control unit 7 may control the processing system SYS in step S13 of FIG. 40 so that the calculated index value becomes a distance corresponding to the above-mentioned target size TS. (4-5-3) Imaging of molten pool MP
  • the imaging device 84 may image the molten pool MP formed on the printing surface MS in addition to or instead of imaging the material irradiation surface ES.
  • the processing system SYS may be provided with an imaging device 86 capable of imaging the molten pool MP formed on the printing surface MS in addition to or instead of the imaging device 84.
  • the imaging device 84 or 86 may capture an image of the molten pool MP to generate an image IMG in which the molten pool MP is captured.
  • the control unit 7 may calculate the size of the molten pool region in which the molten pool MP is captured in the image IMG based on the image IMG generated by the imaging device 84 or 86, and control the machining system SYS (e.g., the machining unit 2) so that the size of the molten pool region becomes a predetermined target size.
  • the machining system SYS can also form a molded object with high molding accuracy.
  • the imaging device 84 may image the printing surface MS in addition to or instead of imaging the material irradiation surface ES.
  • the processing system SYS may be provided with an imaging device 86 capable of imaging the printing surface MS in addition to or instead of the imaging device 84.
  • the imaging device 84 or 86 may capture an image of an object (e.g., a workpiece W or a structural layer SL) having a printing surface MS on its surface.
  • the imaging device 84 or 86 may capture an image of the printing surface MS to generate an image IMG in which the printing surface MS (particularly, an object having the printing surface MS on its surface) is captured.
  • the image IMG in which the printing surface MS (particularly, an object having the printing surface MS on its surface) is captured may be referred to as an object image.
  • control unit 7 may calculate the temperature of the modeling material M supplied to the modeling surface MS based on the image IMG generated by the imaging device 84 or 86, and control the processing system SYS (e.g., processing unit 2) based on the calculated temperature of the modeling material M.
  • control unit 7 may control the processing system SYS (e.g., processing unit 2) to form a model with high modeling accuracy based on the calculated temperature of the modeling material M.
  • the control unit 7 may calculate the temperature of the printing surface MS based on the image IMG generated by the imaging device 84 or 86, and control the processing system SYS (e.g., processing unit 2) based on the calculated temperature of the printing surface MS. For example, the control unit 7 may control the processing system SYS (e.g., processing unit 2) to print an object with high printing accuracy based on the calculated temperature of the printing surface MS.
  • the processing system SYS e.g., processing unit 2
  • the above-mentioned illumination device 85 may illuminate the printing surface MS with illumination light IL.
  • the processing system SYS may include an illumination device capable of illuminating the printing surface MS with illumination light IL in addition to or instead of the illumination device 85.
  • the imaging device 84 or 86 can appropriately image the printing surface MS. (4-5-5) Changing imaging conditions
  • control unit 7 may change the imaging conditions for the imaging device 84 to image the molten material MM.
  • the control unit 7 may change the imaging conditions so that the imaging device 84 can properly image the material irradiation surface ES (specifically, properly image the modeling material M supplied to the material irradiation surface ES; the same applies below).
  • the control unit 7 may change the imaging conditions so that the imaging device 84 can generate a material image IMG_M that can properly perform the above-mentioned molten material feedback control operation.
  • the control unit 7 may change the imaging conditions so that the imaging device 84 can generate a material image IMG_M that can realize a state in which the processing system SYS can model a linear object having a desired size (typically, a desired width) through the above-mentioned molten material feedback control operation.
  • the imaging device 84 captures an image of the material irradiation surface ES based on the imaging conditions changed by the control unit 7.
  • the control unit 7 controls the imaging device 84 to capture an image of the modeling material M supplied to the material irradiation surface ES based on the imaging conditions changed by the control unit 7.
  • the imaging conditions may include conditions regarding the imaging timing at which the imaging device 84 images the material irradiation surface ES.
  • the control unit 7 may change the imaging timing.
  • the control unit 7 may change the imaging timing so that the imaging timing becomes earlier compared to the imaging timing before the change, as shown in FIG. 45(a).
  • the control unit 7 may change the imaging timing so that the imaging timing becomes later compared to the imaging timing before the change, as shown in FIG. 45(a).
  • the conditions regarding the imaging timing may include the timing when the imaging device 84 starts imaging the material irradiation surface ES, as shown in FIG. 45(a).
  • the conditions regarding the imaging timing may include the timing when the imaging device 84 ends imaging the material irradiation surface ES, as shown in FIG. 45(a).
  • the timing when the imaging device 84 starts imaging the material irradiation surface ES may mean the timing when the imaging device 84 switches the state of the mechanical shutter from a closed state to an open state.
  • the timing when the imaging device 84 starts imaging the material irradiation surface ES may mean the timing when the imaging device 84 switches the state of the electronic shutter from an off state to an on state.
  • the timing when the imaging device 84 ends imaging the material irradiation surface ES may mean the timing when the imaging device 84 switches the state of the mechanical shutter from an open state to a closed state.
  • the timing when the imaging device 84 starts imaging the material irradiation surface ES may mean the timing when the imaging device 84 switches the state of the electronic shutter from an on state to an off state.
  • the imaging timing shown in FIG. 45(a) may be considered to be the timing for performing each of the multiple exposures in the multiple exposure.
  • one pulse-shaped waveform shown in FIG. 45(a) may be considered to indicate the timing for performing one exposure in the multiple exposure.
  • the imaging conditions may include conditions regarding the exposure time for the imaging device 84 to image the material irradiation surface ES.
  • the control unit 7 may change the exposure time.
  • the control unit 7 may change the exposure time so that the exposure time is shorter than the exposure time before the change, as shown in FIG. 45(b).
  • the control unit 7 may change the exposure time so that the exposure time is longer than the exposure time before the change, as shown in FIG. 45(b).
  • the exposure time may mean the time from when the imaging device 84 starts imaging the material irradiation surface ES to when the imaging device 84 finishes imaging the material irradiation surface ES.
  • the exposure time shown in FIG. 45(b) may be considered to be the time for performing each of the multiple exposures in the multiple exposure.
  • one pulse-shaped waveform shown in FIG. 45(b) may be considered to indicate the period during which one exposure in the multiple exposure is performed.
  • the imaging conditions may include conditions related to the imaging period or imaging rate at which the imaging device 84 images the material irradiation surface ES.
  • the control unit 7 may change the imaging period or imaging rate.
  • the control unit 7 may change the imaging period so that the imaging period becomes longer compared to the imaging period before the change, as shown in FIG. 45(c).
  • the control unit 7 may change the imaging period so that the imaging period becomes shorter compared to the imaging period before the change, as shown in FIG. 45(c).
  • the control unit 7 may change the imaging rate so that the imaging rate becomes lower compared to the imaging rate before the change, as shown in FIG. 45(c).
  • the control unit 7 may change the imaging rate so that the imaging rate becomes higher compared to the imaging rate before the change, as shown in FIG. 45(c).
  • the imaging period may mean the time from when the imaging device 84 starts imaging the material irradiation surface ES until the imaging device 84 next starts imaging the material irradiation surface ES.
  • the imaging rate may mean the number of times the imaging device 84 starts imaging the material irradiation surface ES per unit time (e.g., per second).
  • the imaging period shown in FIG. 45(c) may be considered to be the period in which each of the multiple exposures in the multiple exposure is performed.
  • the interval between two adjacent pulse waveforms shown in FIG. 45(c) may be considered to indicate the period in which one exposure in the multiple exposure is performed.
  • the imaging rate shown in FIG. 45(c) may be considered to be an index value indicating the number of exposures performed per unit time in the multiple exposure (this index value may be referred to as the exposure rate).
  • the operation of the imaging device 84 for generating multiple material images IMG_M as time-series data changes.
  • the imaging device 84 may be considered to generate multiple material images IMG_M as time-series data by performing multiple exposures as described above, the operation of changing the imaging conditions may be considered equivalent to the operation of changing the conditions for multiple exposure.
  • the control unit 7 may change the imaging conditions based on the processing conditions of the workpiece W by the processing system SYS. For example, when the processing system SYS processes the workpiece W based on first processing conditions, the control unit 7 may change the imaging conditions so that the imaging device 84 images the material irradiation surface ES based on the first imaging conditions. For example, when the processing system SYS processes the workpiece W based on second processing conditions different from the first processing conditions, the control unit 7 may change the imaging conditions so that the imaging device 84 images the material irradiation surface ES based on second imaging conditions different from the first imaging conditions.
  • the control unit 7 may change the imaging conditions so that the imaging device 84 can properly image the material irradiation surface ES even when the processing conditions are changed. For example, when the processing system SYS processes the workpiece W based on the first processing conditions, the control unit 7 may change the imaging conditions to the first imaging conditions so that the imaging device 84 can properly image the molten material MM formed by the processing system SYS based on the first processing conditions. For example, when the processing system SYS processes the workpiece W based on the second processing conditions, the control unit 7 may change the imaging conditions to the second imaging conditions so that the imaging device 84 can properly image the molten material MM formed by the processing system SYS based on the second processing conditions.
  • the control unit 7 may change the imaging conditions based on the processing conditions using an imaging condition table that specifies the correspondence between the processing conditions and the imaging conditions.
  • the imaging condition table may be a table that specifies the imaging conditions to be used by the imaging device 84 when the processing conditions of the workpiece W are one processing condition.
  • the imaging condition table may be a table that records information on the imaging conditions to be used by the imaging device 84 in association with the processing conditions of the workpiece W.
  • the imaging condition table may be stored (in other words, recorded) in the storage device 72.
  • the imaging condition table may be generated in advance by repeatedly performing the above-mentioned molten material feedback control operation while changing at least one of the processing conditions and the imaging conditions, and by identifying the correspondence between the processing conditions and the imaging conditions that can realize a state in which the molding accuracy of the linear object formed as a result of the molten material feedback control operation is a desired accuracy.
  • the processing conditions may include light conditions related to the processing light EL. Since the processing light EL is an example of an energy beam, the light conditions may be referred to as beam conditions.
  • the light conditions may include intensity conditions related to the intensity of the processing light EL.
  • the control unit 7 may change the imaging conditions based on the intensity of the processing light EL irradiated to the workpiece W to process the workpiece W.
  • the control unit 7 may change the imaging conditions based on the intensity of the processing light EL passing through the material irradiation surface ES to process the workpiece W.
  • the processing conditions may include movement pattern conditions related to the movement pattern of the beam passing area PA (i.e., the movement pattern of the processing light EL) within the material irradiation surface ES.
  • the control unit 7 may change the imaging conditions based on the movement pattern of the beam passing area PA.
  • the movement pattern of the beam passing area PA may include the movement speed of the beam passing area PA.
  • the movement pattern of the beam passing area PA may include the movement period of the beam passing area PA.
  • the movement pattern of the beam passing area PA may include the movement stroke of the beam passing area PA (i.e., the stroke amount or stroke width).
  • the movement stroke may mean the amplitude of the reciprocating movement.
  • the movement pattern of the beam passing area PA may include the pattern of the movement trajectory of the beam passing area PA.
  • the movement mode condition may be considered to be equivalent to a condition regarding the movement mode of the molten material MM within the material irradiation surface ES. Since the beam passing area PA moves as the processing light EL is deflected, the movement mode condition may be considered to be equivalent to a condition regarding the deflection mode of the processing light EL.
  • control unit 7 controls at least one of the galvanometer mirrors 2146 and 2156 so that the target irradiation area EA moves within the processing unit area PUA set on the printing surface MS, while controlling at least one of the head drive system 22 and the stage drive system 32 so that the processing unit area PUA moves on the printing surface MS, thereby forming on the printing surface MS a model that extends along the movement direction of the processing unit area PUA on the printing surface MS.
  • the control unit 7 may control the processing unit 2 so that an object having a desired shape pattern is formed within the processing unit area PUA.
  • the control unit 7 controls the processing unit 2 so that four objects BO (BO#1 to BO#4), each having a desired shape pattern, are formed within the processing unit area PUA.
  • the object BO#1 includes two linear objects extending along the Y-axis direction and a ring-shaped object (i.e., a curved object) connecting the two linear objects.
  • the object BO#2 includes a linear object extending along the Y-axis direction.
  • the object BO#3 includes a linear object extending along the Y-axis direction and a linear object intersecting each of the X-axis direction and the Y-axis direction.
  • Object BO#4 includes two straight-line objects that intersect in the X-axis direction and the Y-axis direction and also intersect with each other.
  • control unit 7 may control the processing unit 2 to form the multiple objects BO in parallel.
  • control unit 7 may control the processing unit 2 to form a first object BO of the multiple objects BO, and then form a second object BO of the multiple objects BO.
  • the control unit 7 may emit processing light EL from the irradiation optical system 211 at a timing when the target irradiation area EA overlaps with a position within the processing unit area PUA where the object BO should be formed, while controlling at least one of the galvanometer mirrors 2146 and 2156 so that the target irradiation area EA moves along the X-axis direction and the Y-axis direction within the processing unit area PUA.
  • control unit 7 may not emit processing light EL from the irradiation optical system 211 at a timing when the target irradiation area EA overlaps with a position within the processing unit area PUA where the object BO should not be formed.
  • an object BO having a shape pattern is formed within the processing unit area PUA according to the distribution pattern of the positions where the processing light EL is irradiated.
  • each object BO may be approximately the same as the width of the beam spot BS formed by the processing light EL on the printing surface MS.
  • the control unit 7 may control at least one of the galvanometer mirrors 2146 and 2156 so that the beam spot BS moves along one direction (the X-axis direction in the example shown in FIG. 47(a)) within each processing unit area PUA, thereby forming an object BO having approximately the same width as the beam spot BS and extending along the direction of movement of the beam spot BS.
  • the width of each object BO may be wider than the width of the beam spot formed by the processing light EL on the printing surface MS.
  • the control unit 7 may control at least one of the galvanometer mirrors 2146 and 2156 to alternately repeat an operation of moving the beam spot BS in one direction (the X-axis direction in the example shown in FIG. 47(b)) within each processing unit area PUA and an operation of moving the beam spot BS in another direction intersecting the one direction (the Y-axis direction in the example shown in FIG. 47(b)) within each processing unit area PUA, thereby forming an object BO that has a width wider than the width of the beam spot BS along the other direction and extends along the one direction.
  • the control unit 7 may control at least one of the head drive system 22 and the stage drive system 32 so that the processing unit area PUA moves on the printing surface MS.
  • the control unit 7 may form a model BO having a desired shape pattern within the processing unit area PUA, while also moving the processing unit area PUA on the printing surface MS.
  • FIG. 48 shows an example in which the control unit 7 forms a model BO having a desired shape pattern within the processing unit area PUA, while also moving the processing unit area PUA on the printing surface MS toward the -Y side along the Y-axis direction.
  • the processing system SYS can form a model BO having a desired shape pattern over a wider area on the printing surface MS.
  • the control unit 7 may alternately perform an operation of forming a shaped object BO having a desired shape pattern within the processing unit area PUA and an operation of moving the processing unit area PUA on the printing surface MS. For example, as shown in the first row of FIG. 49, the control unit 7 may control at least one of the head drive system 22 and the stage drive system 32 to move at least one of the processing head 21 and the stage 31 so that the processing unit area PUA is positioned at a first position P11 on the printing surface MS. Thereafter, as shown in the second row of FIG.
  • control unit 7 may control the processing unit 2 to form a shaped object BO having a desired shape pattern within the processing unit area PUA located at the first position P11 while the processing unit area PUA is stationary at the first position P11 on the printing surface MS. Thereafter, the control unit 7 may control at least one of the head drive system 22 and the stage drive system 32 to move at least one of the machining head 21 and the stage 31 so that the machining unit area PUA is located at the second position P12 on the printing surface MS, as shown in the third row of Fig. 49.
  • the machining unit area PUA located at the first position P11 and the machining unit area PUA located at the second position P12 may be adjacent to each other along the movement direction of the machining unit area PUA (the Y-axis direction in the example shown in Fig. 49). Thereafter, the control unit 7 may control the machining unit 2 to print a shaped object BO having a desired shape pattern in the machining unit area PUA located at the second position P12 while the machining unit area PUA is stationary at the second position P12 on the printing surface MS, as shown in the fourth row of Fig. 49.
  • control unit 7 may form a shape object BO having a desired shape pattern in the processing unit area PUA located at the second position P12 so that the shape object BO formed in the processing unit area PUA located at the first position P11 and the shape object BO formed in the processing unit area PUA located at the second position P12 are connected along the movement direction of the processing unit area PUA (the Y-axis direction in the example shown in FIG. 49).
  • control unit 7 may perform an operation of forming a model BO having a desired shape pattern in the processing unit area PUA and an operation of moving the processing unit area PUA on the printing surface MS in parallel.
  • control unit 7 may control the processing system SYS to move the processing unit area PUA on the printing surface MS while forming a model BO having a desired shape pattern in the processing unit area PUA.
  • the control unit 7 may control the processing unit 2 to form a model BO in the processing unit area PUA at time t1 based on the shape pattern of the model BO to be formed in the processing unit area PUA set on the printing surface MS at time t1 (see FIG. 50(b)).
  • control unit 7 may control the processing unit 2 to irradiate the processing light EL from the irradiation optical system 211 at a timing according to the shape pattern of the object BO to be formed in the processing unit area PUA set on the printing surface MS at time t1 (see FIG. 50(b)), while controlling at least one of the galvanometer mirrors 2146 and 2156 so that the target irradiation area EA moves along the X-axis direction and the Y-axis direction within the processing unit area PUA.
  • the control unit 2 may control the processing unit 2 to form the object BO in the processing unit area PUA based on the shape pattern of the object BO to be formed in the processing unit area PUA set on the printing surface MS at time t2 (see FIG. 50(d)).
  • the control unit 7 may control at least one of the galvanometer mirrors 2146 and 2156 so that the target irradiation area EA moves along the X-axis direction and the Y-axis direction, respectively, within the processing unit area PUA, while controlling the processing unit 2 to irradiate the processing light EL from the irradiation optical system 211 at a timing according to the shape pattern (see FIG. 50(d)) of the object BO to be formed within the processing unit area PUA set on the printing surface MS at the time of processing time t2.
  • the control unit 7 may control the processing unit 2 to irradiate a position on the printing surface MS with processing light EL to form a portion of a modeled object BO at a position on the printing surface MS at time t1, and to irradiate the processing light EL to the same position on the printing surface MS to form the same portion at time t2. Therefore, when an operation of forming a modeled object BO having a desired shape pattern within the processing unit area PUA and an operation of moving the processing unit area PUA on the printing surface MS are performed in parallel, each portion of the modeled object BO may be formed by multiple irradiations of the processing light EL.
  • the shape pattern of the formed object BO used to determine the irradiation timing of the processing light EL may be different from the actual shape pattern of the formed object BO to be printed on the printing surface MS.
  • the shape pattern of the formed object BO used to determine the irradiation timing of the processing light EL may be a shape pattern obtained by compressing the actual shape pattern of the formed object BO to be printed on the printing surface MS along the movement direction of the processing unit area PUA.
  • the shape pattern of the formed object BO used to determine the irradiation timing of the processing light EL may be a shape pattern obtained by compressing the actual shape pattern of the formed object BO to be printed on the printing surface MS along the movement direction of the processing unit area PUA at a compression rate according to the movement speed of the processing unit area PUA.
  • the processing system SYS can form, on the printing surface MS, a model BO having the same shape pattern as the shape pattern to be formed on the printing surface MS.
  • the control unit 7 controls at least one of the galvanometer mirrors 2146 and 2156 so that the target irradiation area EA moves along each of the X-axis direction and the Y-axis direction in the processing unit area PUA, as described above, while controlling the processing unit 2 to irradiate the processing light EL from the irradiation optical system 211 at a timing according to the shape pattern of the model BO to be formed in the processing unit area PUA.
  • the control unit 7 alternately performs a scan operation of moving the target irradiation area EA along a scan movement direction that is one of the X-axis direction and the Y-axis direction in the processing unit area PUA, and a step operation of moving the target irradiation area EA by a predetermined step movement amount along a step movement direction that is the other of the X-axis direction and the Y-axis direction.
  • the timing at which the target irradiation area EA is located at one position in the processing unit area PUA differs from the timing at which the target irradiation area EA is located at another position in the processing unit area PUA.
  • the shape pattern of the object BO formed on the printing surface MS may be distorted along both the step movement direction and the step movement direction.
  • the shape pattern of the object BO used to determine the irradiation timing of the processing light EL may be a shape pattern obtained by deforming the actual shape pattern of the object BO to be formed on the printing surface MS in a deformation manner capable of offsetting the distortion occurring in the shape pattern of the object BO formed on the printing surface MS.
  • control unit 7 may control the processing system SYS to form the structural layer SL while changing the width wd of the processing unit area PUA based on the shape of the structural layer SL to be formed on the printing surface MS.
  • the target irradiation area EA moves along a single scanning direction along the printing surface MS in the processing unit area PUA under a situation in which it is assumed that the processing unit area PUA is stationary (i.e., not moving) on the printing surface MS.
  • the width wd of the processing unit area PUA is equivalent to the movement stroke amount of the target irradiation area EA.
  • the width wd of the processing unit area PUA is equivalent to the amplitude of the target irradiation area EA.
  • the width wd of the processing unit area PUA may refer to the size of the processing unit area PUA in a direction intersecting the movement direction of the processing unit area PUA on the printing surface MS, as shown in Figures 6(a) and 6(b).
  • the width (bead width) D of the object formed on the printing surface MS by moving the processing unit area PUA on the printing surface MS depends on the width wd of the processing unit area PUA.
  • FIG. 53(a) when the processing unit area PUA moves along the target movement trajectory MT0, an object having a width along a direction intersecting the target movement trajectory MT0 is formed on the printing surface MS.
  • FIG. 53(a) when the processing unit area PUA moves along the Y-axis direction, a linear object having a width along the X-axis direction and extending along the Y-axis direction is formed on the printing surface MS, as shown in FIG. 53(b).
  • the width D of the object depends on the width wd of the processing unit area PUA.
  • the wider the width wd of the processing unit area PUA the wider the width D of the object.
  • the narrower the width wd of the processing unit area PUA the narrower the width D of the model.
  • the control unit 7 may set the width D of the object to an appropriate width by changing the width wd of the processing unit area PUA based on the shape of the structural layer SL.
  • FIG. 54(a) shows a structural layer SL in which the width along the X-axis direction gradually narrows and then gradually widens along the Y-axis direction.
  • the control unit 7 may change the width wd of the machining unit area PUA while moving the machining unit area PUA along the Y-axis direction so that the width wd of the machining unit area PUA along the X-axis direction gradually narrows and then gradually widens in accordance with the movement of the machining unit area PUA along the Y-axis direction.
  • the machining system SYS can form the structural layer SL shown in FIG. 54(a).
  • the control unit 7 may change the width wd of the machining unit area PUA based on the shape of the structure layer SL not only when forming a structure layer SL having a relatively simple shape as shown in FIG. 54(a) but also when forming a structure layer SL having a relatively complex shape as shown in FIG. 55(a). In this case, for example, as shown in FIG.
  • the control unit 7 may repeat a scan movement operation in which the machining unit area PUA is moved along one direction (e.g., the Y-axis direction) while changing the width wd of the machining unit area PUA based on the shape of the structure layer SL, and a step movement operation in which the machining unit area PUA is moved along another direction (e.g., the X-axis direction) intersecting the one direction.
  • the machining system SYS can mold even a structure layer SL having a relatively complex shape as shown in FIG. 55(a).
  • the processing unit 2 is provided with a single material nozzle 212 having a material supply port 2121 formed therein capable of supplying the modeling material M along each of a plurality of different material supply directions, as shown in FIG. 1.
  • the processing unit 2 may have a plurality of material nozzles 212a capable of supplying the modeling material M along a single material supply direction.
  • FIG. 56(a) which is a side view showing a plurality of material nozzles 212a
  • the processing unit 2 may have three material nozzles 212a capable of supplying the modeling material M.
  • the processing unit 2 may use the plurality of material nozzles 212a to supply the modeling material M in the same supply manner as when a single material nozzle 212a having a material supply port 2121 is used.
  • the processing unit 2 may supply the modeling material M such that the modeling material M is supplied from the plurality of material nozzles 212a along different material supply directions.
  • the processing unit 2 may supply the modeling material M so that multiple material supply axes SX extending along multiple material supply directions intersect (i.e., intersect at a material control point MCP).
  • the position where the material supply axis SX of each of the multiple material nozzles 212a intersects with the processing light EL does not have to be a single point as shown in Figure 56 (a).
  • the position where the material supply axis SX of the first material nozzle 212a intersects with the processing light EL (optical axis AX of the irradiation optical system 211) and the position where the material supply axis SX of the second material nozzle 212a intersect with the processing light EL (optical axis AX of the irradiation optical system 211) may be different in the direction of the optical axis AX of the irradiation optical system 211.
  • the processing unit 2 may be considered to have multiple material control points MCP.
  • the processing unit 2 may be considered to have a material control point MCP corresponding to the point where the material supply axis SX of the first material nozzle 212a and the processing light EL (optical axis AX of the irradiation optical system 211) intersect, and a material supply point MCP corresponding to the point where the material supply axis SX of the second material nozzle 212a and the processing light EL (optical axis AX of the irradiation optical system 211) intersect.
  • the multiple material nozzles 212a do not have to supply the modeling material M at the same time.
  • the control unit 7 may switch the material nozzle 212a that actually supplies the modeling material M between the multiple material nozzles 212a.
  • the control unit 7 can change the position of the material control point MCP (typically, the position in the direction along the optical axis AX) by switching the material nozzle 212a that actually supplies the modeling material M.
  • control unit 7 can change the distance between the material control point MCP and the modeling surface MS (object) without changing the distance between the material nozzle 212a (material supply member) and the modeling surface MS (object).
  • the control unit 7 may combine the operation of switching the material nozzle 212a that actually supplies the modeling material M with the operation of changing the distance between the material nozzle 212a (material supply member) and the modeling surface MS (object).
  • one of the multiple material control points MCP may be located on the modeling surface MS, and the other of the multiple material control points MCP may be located in the space between the multiple material nozzles 212a and the modeling surface MS (the space between the material supply member and the object).
  • the processing unit 2 may simultaneously supply the modeling material M to two or more of the multiple material control points MCP.
  • the same type of modeling material does not have to be supplied from the multiple material nozzles 212a.
  • at least one of a wire-shaped modeling material and a gas-shaped modeling material may be supplied from the first material nozzle 212a.
  • a powder modeling material M may be supplied from the second material nozzle 212a.
  • the processing unit 2 may be equipped with a single material nozzle 212a capable of supplying the modeling material M along a single material supply direction.
  • the material nozzle 212 supplies the modeling material M from the material supply port 2121 of the material nozzle 212 in a material supply direction inclined with respect to the Z axis (i.e., the axis along the optical axis AX of the irradiation optical system 211).
  • the material nozzle 212 may supply the modeling material M from the material supply port 2121 in a material supply direction along the Z axis (i.e., the axis along the optical axis AX of the irradiation optical system 211). Even when a material nozzle 212a capable of supplying the modeling material M along a single material supply direction is used, as shown in FIG.
  • the material nozzle 212a may supply the modeling material M in a material supply direction along the Z axis (i.e., the axis along the optical axis AX of the irradiation optical system 211).
  • the irradiation optical system 211 may emit the processing light EL so that the processing light EL travels along a traveling direction inclined with respect to the Z axis (i.e., an axis along the optical axis AX of the irradiation optical system 211).
  • the irradiation optical system 211 may emit the processing light EL so that the processing light EL travels along a direction different from the material supply direction of the modeling material M.
  • the processing unit 2 changes the emission direction of the processing light EL using the galvanometer mirrors 2146 and 2156.
  • the processing unit 2 may change the emission direction of the processing light EL using at least one of a polygon mirror and a resonant mirror in addition to or instead of the galvanometer mirrors 2146 and 2156.
  • the processing unit 2 melts the modeling material M by irradiating the modeling material M with the processing light EL.
  • the processing unit 2 may melt the modeling material M by irradiating the modeling material M with an arbitrary energy beam.
  • An example of the arbitrary energy beam is at least one of a charged particle beam and an electromagnetic wave.
  • An example of a charged particle beam is at least one of an electron beam and an ion beam.
  • the processing unit 2 forms the three-dimensional structure ST by performing additive processing based on the laser build-up welding method.
  • the processing unit 2 may form the three-dimensional structure ST by performing additive processing in accordance with other methods capable of forming the three-dimensional structure ST.
  • other methods capable of forming the three-dimensional structure ST include at least one of powder bed fusion methods such as selective laser sintering (SLS), binder jetting, material jetting, stereolithography, and laser metal fusion (LMF).
  • the processing system SYS may perform both additive processing and removal processing.
  • the processing system SYS may perform additive processing using one of the processing lights EL#1 and EL#2, and perform removal processing using the other of the processing lights EL#1 and EL#2.
  • the processing system SYS can perform additive processing and removal processing simultaneously. Note that, in cases where the processing system SYS does not need to perform additive processing and removal processing simultaneously, the processing system SYS may perform additive processing and removal processing using the same processing light EL.
  • the processing system SYS may perform at least one of the additive processing and the subtractive processing, as well as the remelt processing to reduce the flatness of the surface of the workpiece W (or the object formed on the workpiece W) processed by the additive processing or the subtractive processing (i.e., to reduce the surface roughness, to make the surface closer to a flat surface).
  • the processing system SYS may perform at least one of the additive processing and the subtractive processing using one of the processing lights EL#1 and EL#2, and may perform the remelt processing using the other of the processing lights EL#1 and EL#2.
  • the processing system SYS can perform at least one of the additive processing and the subtractive processing and the remelt processing simultaneously.
  • the processing system SYS may perform at least one of the additive processing and the subtractive processing and the remelt processing using the same processing light EL.
  • the above-mentioned processing unit 2 may be attached to a robot (typically, a multi-joint robot).
  • the processing unit 2 may be attached to a welding robot for performing welding.
  • the processing unit 2 may be attached to a self-propelled mobile robot.
  • each of the above-mentioned embodiments may be appropriately combined with at least some of the other constituent elements of each of the above-mentioned embodiments. Some of the constituent elements of each of the above-mentioned embodiments may not be used.
  • the disclosures of all publications and U.S. patents cited in each of the above-mentioned embodiments are incorporated by reference into the present text.

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Abstract

La présente invention concerne un système de traitement, qui comprend : un dispositif de traitement qui fait fondre, avec un faisceau, un matériau acheminé par un élément d'acheminement pour former un article formé sur un objet ; un dispositif de commande qui peut commander le dispositif de traitement ; et un dispositif d'imagerie. Le dispositif de commande commande le dispositif de traitement de telle sorte que le dispositif de traitement fait fondre un matériau en irradiant le matériau avec un faisceau dans un espace entre l'élément d'acheminement et un objet et forme un article formé sur l'objet en acheminant le matériau fondu jusqu'à l'objet. Le dispositif d'imagerie génère une image de matériau fondu par imagerie du matériau fondu par l'irradiation avec le faisceau dans l'espace entre l'élément d'acheminement et l'objet. Le dispositif de commande commande le dispositif de traitement sur la base de l'image de matériau fondu.
PCT/JP2023/009793 2023-03-14 2023-03-14 Système de traitement et procédé de traitement Pending WO2024189765A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020015944A (ja) * 2018-07-25 2020-01-30 株式会社ジェイテクト 付加製造用学習モデル生成装置、付加製造による造形物の製造条件決定装置および付加製造による造形物の状態推定装置
WO2021149683A1 (fr) * 2020-01-20 2021-07-29 株式会社ニコン Système de traitement
JP2021152219A (ja) * 2018-03-30 2021-09-30 株式会社ニコン 造形装置及び造形方法
JP2021188111A (ja) * 2020-06-04 2021-12-13 株式会社ジェイテクト 付加製造装置
WO2022018853A1 (fr) * 2020-07-22 2022-01-27 株式会社ニコン Système de traitement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021152219A (ja) * 2018-03-30 2021-09-30 株式会社ニコン 造形装置及び造形方法
JP2020015944A (ja) * 2018-07-25 2020-01-30 株式会社ジェイテクト 付加製造用学習モデル生成装置、付加製造による造形物の製造条件決定装置および付加製造による造形物の状態推定装置
WO2021149683A1 (fr) * 2020-01-20 2021-07-29 株式会社ニコン Système de traitement
JP2021188111A (ja) * 2020-06-04 2021-12-13 株式会社ジェイテクト 付加製造装置
WO2022018853A1 (fr) * 2020-07-22 2022-01-27 株式会社ニコン Système de traitement

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