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WO2024188818A1 - Dispositif d'éclairage et procédé de production d'un dispositif d'éclairage - Google Patents

Dispositif d'éclairage et procédé de production d'un dispositif d'éclairage Download PDF

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Publication number
WO2024188818A1
WO2024188818A1 PCT/EP2024/056074 EP2024056074W WO2024188818A1 WO 2024188818 A1 WO2024188818 A1 WO 2024188818A1 EP 2024056074 W EP2024056074 W EP 2024056074W WO 2024188818 A1 WO2024188818 A1 WO 2024188818A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier substrate
lighting device
light source
semiconductor chip
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2024/056074
Other languages
German (de)
English (en)
Inventor
Zeljko Pajkic
Michael Zitzlsperger
Hansjoerg Schoell
Ulrich Streppel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Ams Osram International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams Osram International GmbH filed Critical Ams Osram International GmbH
Priority to CN202480018368.2A priority Critical patent/CN120883758A/zh
Priority to DE112024000353.2T priority patent/DE112024000353A5/de
Publication of WO2024188818A1 publication Critical patent/WO2024188818A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Definitions

  • a lighting device which can be used in a headlight of a motor vehicle can have a carrier substrate and a semiconductor light source arranged on the carrier substrate.
  • the lighting device can also have a potting material in an area laterally surrounding the semiconductor light source.
  • a dam acting as a barrier can be provided on the carrier substrate, which surrounds the semiconductor light source on the circumference.
  • the dam can be formed by dosing a plastic material onto the carrier substrate using a dispenser.
  • the dam can have a convex cross-sectional profile due to the manufacturing process.
  • the lighting device in which light radiation emitted by the semiconductor light source can be projected into an illumination area using imaging optics, this can lead to reflections of the light radiation on the dam, with the result that the light radiation is also projected into undesirable areas of the illumination area and so-called ghost images are present.
  • the object of the present invention is to provide an improved lighting device and a corresponding method for producing a lighting device.
  • a lighting device has a semiconductor light source, a circumferential aperture element and a carrier substrate.
  • the semiconductor light source and the aperture element are arranged on a mounting side of the carrier substrate.
  • the semiconductor source is located in an inner region of the aperture element, which is surrounded by an inner side of the aperture element.
  • the aperture element has an undercut on the inner side, seen in cross section, and thus a shape that protrudes inwards in a direction away from the mounting side of the carrier substrate.
  • the proposed lighting device uses an aperture element that surrounds a semiconductor light source and is arranged together with the semiconductor light source in a direct manner on a mounting side of a carrier substrate.
  • the semiconductor light source is located in an inner area which is surrounded by the diaphragm element and an inner side of the diaphragm element which is directed inwards or faces the semiconductor light source.
  • the diaphragm element On the inner side, the diaphragm element has, as seen in cross-section, a lateral recess in the form of an undercut. In this way, the diaphragm element has a cross-sectional shape which projects inwards in a direction away from the mounting side of the carrier substrate and thus projects towards the semiconductor light source.
  • the direction away from the mounting side of the carrier substrate can relate to a normal to the mounting side.
  • This shape of the diaphragm element makes it possible for light radiation emitted by the semiconductor light source in the direction of the diaphragm element (also) to be directed at the diaphragm element at least partly in the direction of the carrier substrate and not away from the lighting device. 2022PF02262 - 3 - is reflected. Depending on the design, absorption can also occur on the diaphragm element. As a result, the diaphragm element can efficiently suppress scattered light, so that the occurrence of ghost images can be reliably prevented.
  • the diaphragm element can also be located approximately at the level of the semiconductor light source.
  • the lighting device can be characterized by a large or maximum aperture and lighting operation with a small or minimal loss of light.
  • a diaphragm mounted on a housing or an external diaphragm is used at a height offset from a light source. Further possible details and embodiments are described below which can be considered for the lighting device and its components.
  • the cover element can have a rear side and a front side.
  • the rear side of the cover element can face the mounting side of the carrier substrate, and the front side of the cover element can face away from the mounting side of the carrier substrate.
  • the cover element can be arranged with the rear side on the mounting side of the carrier substrate.
  • the cover element can be attached to the carrier substrate using an adhesive, for example.
  • the cover element can also have a lateral outer side facing outwards or laterally outwards and facing away from the inner region.
  • the circumferential shape of the cover element can be a closed circumferential shape.
  • the cover element can be in the form of a frame with several or four adjacent 2022PF02262 - 4 - the frame sections.
  • the undercut and the inwardly projecting cross-sectional shape can be present along the entire circumferential inside of the aperture element, and thus in a circumferential form.
  • the shape protruding inwards on the inside of the aperture element in the direction away from the mounting side of the carrier substrate can, seen in cross-section, refer to the entire or substantially entire inside of the aperture element.
  • the aperture element in the area of the undercut on the inside can protrude increasingly inwards as the distance to the mounting side of the carrier substrate increases.
  • the aperture element can be laterally spaced from the semiconductor light source. A distance between the semiconductor light source and the aperture element on the mounting side of the carrier substrate can, for example, be in the millimeter range or in the range of several hundred micrometers.
  • the aperture element can have a greater thickness than the semiconductor light source and thus protrude beyond the semiconductor light source.
  • the thickness of the aperture element can, for example, be in the range of several hundred micrometers, and the thickness of the semiconductor light source can, for example, be in the range of ten micrometers or less.
  • the aperture element can be produced in a different way. This offers the possibility of providing the aperture element with a precisely defined shape.
  • the aperture element can, for example, be produced by means of a molding process such as injection molding, and can therefore be a molded part or injection molded part.
  • the undercut of the panel element can be an open undercut. This means that there is no solid body inside or in the area of the undercut.
  • the undercut is formed by the inside of the panel element being curved and/or running at an angle to the mounting side of the carrier substrate.
  • the panel element or its inside can have a convex or concave curvature, for example.
  • the inside runs at an angle to the mounting side of the carrier substrate, there can be a corresponding angle of inclination between the inside and a normal to the mounting side.
  • the angle of inclination can be in the range of several tens of degrees and can be thirty degrees, for example.
  • a mixed form is also possible, in which the inside of the diaphragm element can have a curved partial area and a partial area that runs at an angle to the mounting side of the carrier substrate.
  • the diaphragm element has a front side facing away from the carrier substrate, which at least in a partial area is designed to run at an angle to the mounting side of the carrier substrate and to slope outwards.
  • the lighting device has a potting material which is located outside the inner region surrounded by the aperture element and borders at least on an outer side or lateral outer side of the aperture element and on the mounting side of the carrier substrate.
  • the potting material can also border other places, for example on the circumference of the carrier substrate, as well as other possible components of the lighting device.
  • the potting material can serve to protect bond wires which, outside the inner region surrounded by the aperture element, are connected to contact elements of the carrier substrate on its mounting side and can be embedded in the potting material.
  • the aperture element can serve as a barrier during the manufacture of the lighting device, with which the introduction of the potting material into the inner region of the aperture element is prevented when the potting material is applied or potted.
  • the potting material can be reflective or have a white color.
  • the potting material can comprise a plastic or silicone material with reflective particles or scattering particles embedded therein.
  • the panel element has a recess with a stop edge for a or the aforementioned potting material on a front side facing away from the carrier substrate.
  • the potting material can be applied or potted in such a way that part of the front side of the panel element is also covered with the potting material. This can be used to additionally mechanically fasten the panel element to the carrier substrate.
  • the stop edge can be used to stop the potting material when it is applied, so that the panel element can be covered with the potting material on the front in a defined manner.
  • the recess and stop edge can be in a circumferential form.
  • the panel element has a section that projects outwards or laterally outwards on a front side facing away from the carrier substrate.
  • This section of the panel element can also provide protection for bonding wires that can be connected to contact elements of the carrier substrate on its mounting side outside the inner area surrounded by the panel element.
  • the bonding wires can be covered by the projecting section of the panel element at least in the area of the contact elements of the carrier substrate and thus protected.
  • the use of a potting material in which the bonding wires can be embedded can be additionally provided or omitted.
  • the laterally projecting section can be in a circumferential form. This section can also run parallel to the mounting side of the carrier substrate.
  • the panel element can be made from different materials and produced in different ways, for example as mentioned above in the form of an injection-molded part.
  • Possible materials for the diaphragm element are plastic materials such as silicones or polysiloxanes, which can be clear or transparent, or, for example, slightly diffusely reflective or white in color through the use of embedded reflective particles or scattering particles. The latter design can achieve insensitivity to external radiation such as sunlight.
  • Other possible materials are silicon, ceramics, glasses and metals.
  • the diaphragm element can be made in one piece or in the form of a single layer from one of the aforementioned materials. A design made of several materials is also possible.
  • the diaphragm element has a lower diaphragm section and an upper diaphragm section arranged on the lower diaphragm section.
  • the diaphragm element is arranged with the lower diaphragm section on the carrier substrate.
  • the lower and upper diaphragm sections 2022PF02262 - 8 - section have a different material composition. This multi-layer design offers the possibility of designing the panel element with regard to different functions or specifications.
  • the panel element comprising the lower and upper panel sections can, for example, be implemented in the form of a two-component injection-molded part.
  • the lower panel section is made of an absorbent or transparent material and the upper panel section is made of a reflective material.
  • the materials in question can each be, for example, a plastic material such as a silicone material, whereby a reflective design can be implemented by embedded reflective particles or scattering particles, and an absorbent design can be implemented by embedded absorbent particles such as soot particles.
  • the diaphragm element Due to the reflective upper diaphragm section, the diaphragm element can be insensitive to radiation from outside, such as sunlight. Light radiation emitted by the semiconductor light source in the direction of the inside of the diaphragm element can also be reflected by the upper diaphragm section in the direction of the carrier substrate.
  • part of the light radiation can also be absorbed by the lower diaphragm section or coupled into the lower diaphragm section and thus reflected, for example, on the upper diaphragm section or on a potting material adjacent to the diaphragm element. Radiation reflection in the direction of an imaging optics and thus the occurrence of ghost images can be avoided.
  • the diaphragm element has a reflective coating on a front side facing away from the carrier substrate.
  • the diaphragm element can have a base body on which the reflective 2022PF02262 - 9 - coating is arranged on the front side.
  • the reflective coating can be made of a plastic or silicone material with embedded reflective particles or scattering particles.
  • the diaphragm element Due to the reflective coating, by which the front side of the diaphragm element can be formed or substantially formed, the diaphragm element can be insensitive to radiation from outside such as sunlight.
  • the diaphragm element has an absorbent coating on the inside.
  • the diaphragm element can have a base body on which the absorbent coating is arranged.
  • the absorbent coating can be made of a plastic or silicone material with embedded absorbent particles or soot particles.
  • the inside of the diaphragm element can be formed or substantially formed by the absorbent coating.
  • the absorbent coating can absorb or substantially absorb light radiation emitted by the semiconductor light source in the direction of the inside of the diaphragm element.
  • the lighting device can have other components in addition to the aforementioned components such as the semiconductor light source, the aperture element and the carrier substrate.
  • the lighting device has a carrier plate on which the carrier substrate is arranged.
  • the carrier plate and the carrier substrate are electrically connected via bonding wires.
  • the above-mentioned design is used here, according to which the bonding wires outside the inner area surrounded by the aperture element are connected to contact elements on the mounting side of the carrier substrate.
  • the carrier plate can have a front side on which the carrier substrate can be arranged.
  • the carrier plate 2022PF02262 - 10 - can also have contact elements on the front side to which the bonding wires can be connected.
  • the front contact elements of the carrier plate can be connected to contact elements on a rear side of the carrier plate opposite the front side.
  • the rear contact elements of the carrier plate can be provided for electrically contacting the lighting device.
  • the lighting device can be supplied with electricity and electrical control signals for controlling the lighting operation can be applied to the lighting device.
  • the carrier plate can be implemented as a circuit board.
  • the bonding wires are embedded in a potting material.
  • the potting material can be located outside the inner region surrounded by the cover element and can adjoin at least a lateral outer side of the cover element and the mounting side of the carrier substrate.
  • the potting material can also be peripherally adjacent to the carrier substrate and to the carrier plate or its front side.
  • the lighting device has a molded body arranged on the carrier plate or on its front side, which surrounds the carrier substrate, the semiconductor light source and the diaphragm element.
  • the molded body can protrude over the components it surrounds and form a housing that protects these components.
  • the potting material can be located, among other things, in an area between the carrier substrate and the molded body.
  • the semiconductor light source and the carrier substrate can be electrically connected in a suitable manner so that the semiconductor light source can be electrically supplied or controlled via the carrier substrate during lighting operation.
  • the semiconductor light source and the carrier substrate can 2022PF02262 - 11 - Have contact elements which are electrically connected, for example, via a solder.
  • the contact elements of the carrier substrate can be present on its mounting side.
  • the contact elements of the semiconductor light source can be rear-side contact elements.
  • the carrier substrate is an electronic semiconductor chip used to control the semiconductor light source.
  • the electronic semiconductor chip can have electronic circuit components in addition to contact elements on the mounting side.
  • the electronic semiconductor chip can be implemented in the form of an application-specific integrated circuit or as an ASIC chip (application-specific integrated circuit).
  • the semiconductor light source can be implemented in the form of a pixelated light source with several separately controllable light-emitting pixels. In this way, the lighting device can be used, for example, in a headlight of an adaptive lighting system (AFS, adaptive front-lighting system) of a motor vehicle.
  • AFS adaptive lighting system
  • the semiconductor light source has a pixelated light-emitting semiconductor chip. This can be a pixelated LED chip (light-emitting diode).
  • the semiconductor light source can also have a conversion layer arranged on the light-emitting semiconductor chip for radiation conversion.
  • the light-emitting semiconductor chip can generate primary light radiation, which can be partially converted into secondary light radiation by the conversion layer.
  • the primary and secondary light radiation can be blue and yellow light radiation, so that overall white light radiation can be emitted by the semiconductor light source.
  • the semiconductor light source designed in pixelated form can alternatively be implemented with an arrangement of several individual light-emitting semiconductor chips such as LED chips. A common conversion layer for radiation conversion, or separate conversion layers for radiation conversion can be arranged on the several light-emitting semiconductor chips.
  • the semiconductor light source can also be implemented with a non-pixelated light-emitting semiconductor chip or LED chip and optionally a conversion layer for radiation conversion arranged on it.
  • a method for producing a lighting device comprises providing a carrier substrate, providing a semiconductor light source on a mounting side of the carrier substrate and providing a circumferential aperture element on the mounting side of the carrier substrate.
  • the semiconductor light source and the aperture element are provided in such a way that the semiconductor light source is located in an inner region of the aperture element, which is surrounded by an inner side of the aperture element.
  • the aperture element has an undercut on the inner side, seen in cross section, and thus a shape that protrudes inwards in a direction away from the mounting side of the carrier substrate.
  • the method offers the possibility of reliably producing the lighting device described above or one or more of the above-described embodiments of the lighting device.
  • the aforementioned features and details can be used accordingly in relation to the manufacturing method.
  • the lighting device produced using the method can be characterized by effective suppression of stray light and lighting operation without ghost images. This is because the undercut of the diaphragm element can ensure that light radiation emitted by the semiconductor light source (also) in the direction of the diaphragm element during lighting operation is not reflected away from the lighting device by the diaphragm element.
  • the provision of the diaphragm element comprises a separate production of the diaphragm element and subsequent arrangement of the diaphragm element on the carrier substrate.
  • the diaphragm element can be made from different materials. As stated above, these can include plastic materials such as silicones or polysiloxanes, silicon, ceramics, glasses and metals.
  • the aperture element can be produced, for example, by a molding process such as injection molding or two-component injection molding.
  • the arrangement of the separately produced aperture element on the carrier substrate can be carried out by gluing it on or using an adhesive.
  • the provision of the aperture element includes forming the aperture element on the carrier substrate by carrying out a 3D printing process. In this process, which is carried out using a 3D printer, the aperture element can be made from a plastic material. 2022PF02262 - 14 - Furthermore, the produced cover element can be arranged directly on the mounting side of the carrier substrate. In a further embodiment, the provision of the cover element comprises providing a profiled band-shaped starting body and arranging the starting body on the carrier substrate. The band-shaped starting body can be made of a flexible plastic material. The arrangement of the band-shaped starting body on the carrier substrate to form the cover element can be done by gluing it on or using an adhesive.
  • the provision of the cover element comprises applying a pasty starting material to the carrier substrate using a template.
  • the template has a recess for specifying a cross-sectional shape of the cover element.
  • the pasty starting material can be a silicone material, for example.
  • the produced cover element can be arranged directly on the mounting side of the carrier substrate.
  • the semiconductor light source can have a light-emitting or pixelated light-emitting semiconductor chip. This can be arranged on the carrier substrate by soldering.
  • a conversion layer for radiation conversion can also be provided on the light-emitting semiconductor chip.
  • the conversion layer can be produced, for example, by spray coating.
  • the manufacturing method can include further steps. Another possible step is arranging the carrier substrate on a carrier plate.
  • a molded body can be formed on the carrier plate, which has a shape surrounding an area.
  • the carrier substrate can be on the carrier plate 2022PF02262 - 15 - can be arranged.
  • Further possible steps are carrying out a wire bonding process in order to electrically connect contact elements of the carrier substrate and the carrier plate via bonding wires, and applying or casting a casting material.
  • the cover element can serve as a barrier which prevents the casting material from entering the interior area surrounded by the cover element.
  • the casting material can be a plastic or silicone material with reflective particles or scattering particles embedded in it. The steps of the manufacturing process can be carried out in different orders, depending on the design.
  • the carrier plate It is possible, for example, to form the molded body on the carrier plate, then to arrange the carrier substrate already provided with the semiconductor light source or the light-emitting semiconductor chip on the carrier plate, then to carry out a wire bonding process and to provide the aperture element on the carrier substrate (for example by arranging a separately produced aperture element), and then to apply the potting material.
  • the carrier substrate can also be provided with the aperture element before being arranged on the carrier plate. Forming a conversion layer by spray coating can take place after arranging the carrier substrate provided with the light-emitting semiconductor chip on the carrier plate.
  • the method can also be carried out in such a way that several lighting devices are manufactured together or in a composite manner.
  • the carrier plate can have dimensions for several lighting devices, and the molded body can be formed with several areas surrounded by the molded body, in each of which a carrier substrate equipped with a semiconductor light source or a light-emitting semiconductor chip (and optionally a diaphragm element) can be arranged on the carrier plate.
  • a carrier substrate equipped with a semiconductor light source or a light-emitting semiconductor chip and optionally a diaphragm element
  • a diaphragm element for example by 2022PF02262 - 16 - arranging a separately produced aperture element
  • a composite of carrier substrates can also be provided.
  • this composite can be a wafer made up of several connected electronic semiconductor chips. Several light-emitting semiconductor chips can be mounted on this composite or wafer. Subsequently, separation can take place so that several carrier substrates or electronic semiconductor chips equipped with a light-emitting semiconductor chip are provided.
  • Figures 1 and 2 a side view and a top view of a lighting device comprising a carrier plate, a molded body, an electronic semiconductor chip, a semiconductor light source, a diaphragm element and a potting material, wherein the diaphragm element has an inner side running obliquely to a mounting side of the electronic semiconductor chip and thus an undercut on the inner side;
  • Figure 3 a side view of a section of the lighting device;
  • Figure 4 a representation of a lighting arrangement comprising the lighting device and an imaging optics;
  • Figure 5 a side view of a section of the lighting device in lighting mode, wherein light emission and reflection on the diaphragm element are shown;
  • Figure 6 is a side view of a section of another lighting device in lighting mode, which has a dam instead of the diaphragm element;
  • Figure 7 is a side view of a section of the lighting device, showing a structure of the semiconductor light source;
  • Figure 8 is a side view of a section of the lighting
  • the lighting device 100 has an integrated diaphragm element 130 that runs around a semiconductor light source 110. It is pointed out that the figures cannot be to scale. Therefore, components, elements and structures shown in the figures can be exaggeratedly large or reduced in size. It is also pointed out that features and details that are mentioned in relation to one embodiment can also be used in relation to other embodiments, and several embodiments and their features can be combined with one another. Matching features can only be described in detail with reference to one embodiment.
  • the figures include side sectional views and top views. In the top views, cutting lines are indicated which refer to cutting planes of associated sectional views.
  • FIGS 1 and 2 show a side sectional view and a top view of a lighting device 100 according to a possible embodiment.
  • the lighting device 100 has a semiconductor light source 110 for generating a light radiation 210 (cf. Figures 4 and 5) and an electronic semiconductor chip 120 for controlling the operation of the semiconductor light source 110.
  • the electronic semiconductor chip 120 has electronic circuit components (not shown) for this purpose.
  • the electronic semiconductor chip can be in the form of an application-specific integrated circuit or as an ASIC chip (application-specific 2022PF02262 - 20 - integrated circuit).
  • the electronic semiconductor chip 120 simultaneously serves as a carrier substrate of the semiconductor light source 110.
  • the semiconductor light source 110 is arranged on a front side of the electronic semiconductor chip 120, which is referred to below as the mounting side 121.
  • the semiconductor light source 110 or a light-emitting semiconductor chip 115 thereof is mechanically and electrically connected to the electronic semiconductor chip 120.
  • the arrangement of the two semiconductor chips 115, 120 can also be referred to as a system-on-chip (SoC).
  • SoC system-on-chip
  • the semiconductor light source 110 is a pixelated light source which has a plurality of light-emitting pixels 111 arranged next to one another and which can be controlled separately. This configuration is indicated in the top view of Figure 2.
  • the semiconductor light source 110 is relatively flat and can therefore also be referred to as a light-emitting surface.
  • Another component of the lighting device 100 shown in Figures 1 and 2 is a circumferential aperture element 130, which is also arranged directly on the mounting side 121 of the electronic semiconductor chip 120.
  • the aperture element 130 can be attached to the electronic semiconductor chip 120, for example, using an adhesive (not shown).
  • the aperture element 130 surrounds an inner region 137, within which the semiconductor light source 110 is located at a distance from the aperture element 130.
  • the inner region 137 is delimited by a circumferential inner side 132 of the aperture element 130 (see Figure 3), which is directed laterally inwards and faces the semiconductor light source 110.
  • the diaphragm element 130 has a lateral recess in the form of an undercut 135 on the inside.
  • a thickness of the diaphragm element 130 is greater than a thickness of the semiconductor light source 110, so that the diaphragm element 130 projects beyond the semiconductor light source 110.
  • the diaphragm element 130 has, as seen in plan view, a closed, circumferential frame shape with four frame sections adjoining one another at right angles. According to the exemplary embodiment shown in Figure 2, 2022PF02262 - 21 -
  • the semiconductor light source 110 and the frame-shaped aperture element 130 have a rectangular, non-square contour.
  • the aperture element 130 can be made from different materials. For example, a design made from a plastic material such as silicone or polysiloxane is conceivable. Such materials can be clear or transparent, or can include embedded reflective particles or scattering particles (not shown) and can therefore be slightly diffusely reflective or have a white color. A reflective or white design can make the aperture element 130 insensitive to external radiation such as sunlight.
  • the aperture element 130 can be produced, for example, by a molding process such as injection molding, and can therefore be a molded or injection-molded part.
  • the aperture element 130 can also be made from other materials. This can include silicon, a ceramic material, a glass material and a metallic material.
  • the aperture element 130 is designed from silicon taking into account the crystal structure of silicon, so that the aperture element 130 has sufficient mechanical stability.
  • the aperture element 130 can be made in one piece or in the form of a single layer from one of the aforementioned materials. A design from several materials is also possible. Examples of this are explained below with reference to Figures 16 and 17.
  • the lighting device 100 also comprises, as shown in Figure 1, a carrier plate 150 carrying the electronic semiconductor chip 120.
  • the electronic semiconductor chip 120 is arranged on a front side of the carrier plate 150 with a rear side opposite the mounting side 121.
  • the carrier plate 150 can be implemented in the form of a printed circuit board (PCB). 2022PF02262 - 22 -
  • the carrier plate 150 has, in addition to an electrically insulating material or circuit board material such as FR4 (flame retardant), an electrical contact structure 151 made of an electrically conductive or metallic material.
  • the contact structure 151 comprises contact elements 156 on the front side of the carrier plate 150 and contact elements 157 on a rear side of the carrier plate 150 opposite the front side.
  • the rear contact elements 157 serve to contact the lighting device 100 in order to supply the lighting device 100, ie the electronic semiconductor chip 120 and via this the semiconductor light source 110, with electrical energy and to supply the lighting device 100 or the electronic semiconductor chip 120 with electrical control signals for controlling the lighting operation.
  • the front and rear contact elements 156, 157 are connected to one another via vias extending through the carrier plate 150.
  • the electrical contact structure 151 of the carrier plate 150 is further electrically connected to the electronic semiconductor chip 120 via bonding wires 160.
  • the bonding wires 160 are connected to the front contact elements 156 of the carrier plate 150 (see Figure 1) and to contact elements 126 of the electronic semiconductor chip 120 on its mounting side 121 (see Figure 3).
  • the contact elements 126 of the electronic semiconductor chip 120 are located outside the inner region 137 enclosed by the cover element 130 and to the side or outside of the cover element 130. As is indicated in Figure 2, the bonding wires 160 can be electrically connected to the electronic semiconductor chip 120 in the region of the entire circumference of the latter.
  • the carrier plate 150 is additionally designed with a heat dissipation structure 159 for the electronic semiconductor chip 120, as shown in Figure 1.
  • the heat dissipation structure 159 which can be made of the same metallic material as the contact structure 151, has a flat contact on the front and back of the carrier plate 150. 2022PF02262 - 23 - contact element, the respective contact elements being connected to one another via via vias.
  • the electronic semiconductor chip 120 is arranged with its rear side on the front contact element of the heat dissipation structure 159.
  • the electronic semiconductor chip 120 can be attached to the heat dissipation structure 159 using an adhesive (not shown).
  • the lighting device 100 shown in Figures 1 and 2 also has a molded body 170 arranged on the front side of the carrier plate 150.
  • the molded body 170 made of a plastic material serves as the housing of the lighting device 100.
  • the molded body 170 surrounds an area in which the electronic semiconductor chip 120, the semiconductor light source 110, the aperture part 130 and the bonding wires 160 are arranged.
  • the molded body 170 is formed with such a thickness that the molded body 170 projects beyond the aforementioned components 110, 120, 130, 160.
  • the lighting device 100 also has a potting material 180. This serves to mechanically protect the bonding wires 160, which are therefore embedded in the potting material 180.
  • the potting material 180 fills a peripheral area which, when viewed from above, is delimited on the one hand by the molded body 170 and on the other hand by the electronic semiconductor chip 120 and the aperture element 130.
  • the inner region 137 enclosed by the cover element 130 is free of the encapsulation material 180.
  • the encapsulation material 180 borders on a circumferential lateral outer side 133 of the cover element 130 (see Figure 3), and laterally therefrom on the mounting side 121 of the electronic semiconductor chip 120 and on a lateral circumference of the electronic semiconductor chip 120.
  • the encapsulation material 180 borders on the front side of the carrier plate 150 and on the inside on the molded body 170. Seen in plan view, the electronic semiconductor chip 120 on the outside of the cover element 130 and the bonding wires 160 are covered by the encapsulation material 180. This fact is shown in the plan view of Figure 2 by 2022PF02262 - 24 - takes into account that the outer contour of the electronic semiconductor chip 120 and the bonding wires 160 are shown in dashed lines.
  • the potting material 180 which can also be referred to as embedding or encapsulation material, can be reflective or have a white color. For this purpose, the potting material 180 can comprise a plastic or silicone material and reflective particles or scattering particles (not shown) embedded therein.
  • the potting material 180 which is present in a flowable form, is applied.
  • the aperture element 130 serves as a barrier which prevents the potting material 180 from being introduced into the inner region 137 surrounded by the aperture element 130.
  • the application can be accompanied by a complete wetting of the lateral outer side 133 of the cover element 130 and the inner side of the molded body 170 with the potting material 180, so that the potting material 180 can have a convex curvature on a front surface, as indicated in Figure 1.
  • Figure 3 shows a side sectional view of the lighting device 100 in an enlarged detail, from which further details become clear. In Figure 3, one of the four frame sections of the frame-shaped cover element 130 (see Figure 2) is shown in cross section.
  • a lateral direction 201 and a vertical direction 202 are additionally shown in Figure 3 using arrows.
  • the lateral direction 201 runs parallel to the mounting side 121 of the electronic semiconductor chip 120, and the vertical direction 202 extends perpendicularly thereto.
  • the vertical direction 202 therefore corresponds to a normal of the mounting side 121.
  • the circumferential lateral inner side 132 of the cover element 130 runs obliquely in cross section to the mounting side 121 of the electronic semiconductor chip 120.
  • an angle of inclination is shown for this purpose. 2022PF02262 - 25 - 243 between the inner side 132 and the normal of the mounting side 121 (vertical direction 202).
  • the angle of inclination 243 can be in the range of several 10° and can be, for example, 30°. Due to this design, the already mentioned undercut 135 is present on the inner side 132 of the cover element 130. In this area, the cover element 130 therefore has a cross-sectional shape that projects laterally inwards (in the lateral direction 201) in a direction (vertical direction 202) away from the mounting side 121 of the electronic semiconductor chip 120. In the area of the undercut 135, the cover element 130 protrudes further inwards, the greater the distance to the mounting side 121 of the electronic semiconductor chip 120. The inwardly projecting shape and the undercut 135 are located along the entire circumferential cover element 130, and thus in circumferential form.
  • the undercut 135 is an open or exposed undercut 135, in the area of which there is no solid body.
  • the laterally outward-facing outer side 133 of the cover element 130 runs in cross section perpendicular (vertical direction 202) to the mounting side 121 of the electronic semiconductor chip 120.
  • the cover element 130 also has a circumferential front side 131 facing away from the mounting side 121 and running parallel to it.
  • the cover element 130 is arranged on the mounting side 121 of the electronic semiconductor chip 120 with a circumferential rear side opposite the front side 131, which faces the electronic semiconductor chip 120.
  • the cover element 130 can be attached to the mounting side 121 using an adhesive (not shown), for example.
  • the frame shape of the cover element 130 means that the inner side 132 and the other sides of the cover element 130 (front side 131, outer side 133, rear side) are each made up of several or four sections. 2022PF02262 - 26 -
  • the aperture element 130 and the semiconductor light source 110 laterally surrounded by the aperture element 130 are arranged at a distance from one another on the mounting side 121 of the electronic semiconductor chip 120. For this purpose, a distance 241 between these components on the mounting side 121 is indicated in Figure 3.
  • the distance 241, which exists along the entire circumference of the semiconductor light source 110, can be in the millimeter range or in the range of several hundred micrometers.
  • Figure 3 also illustrates a vertical thickness 242 of the aperture element 130, which can be in the range of several hundred micrometers.
  • the semiconductor light source 110 has a smaller thickness, which can be in the range of ten micrometers or less.
  • Figure 4 shows a lighting arrangement 250 which comprises the lighting device 100 and an imaging optics 251 arranged downstream of the lighting device 100.
  • a light radiation 210 can be generated by the semiconductor light source 110 of the lighting device 100 and emitted in the direction of the imaging optics 251.
  • the imaging optics 251 can shape the light radiation 210 coming from the lighting device 100 and optically image it into an illumination plane 255 at a distance from the imaging optics 251.
  • the pixelated design of the semiconductor light source 110 with several separately operable light-emitting pixels 111 offers the possibility of generating different light distributions in the illumination area 256 by selectively controlling individual, several or all pixels 111.
  • the lighting arrangement 250 shown in Figure 4 can, for example, be a headlight of an adaptive lighting system (AFS, adaptive front- 2022PF02262 - 27 - lighting system).
  • the light radiation 210 emitted by the semiconductor light source 110 can be a white light radiation
  • the illumination area 256 can be an area in front of a vehicle.
  • the imaging optics 251 can be a lens, as shown in Figure 4.
  • Figure 5 shows a side sectional view corresponding to Figure 3 of a section of the lighting device 100 in lighting mode.
  • the light radiation 210 generated by the semiconductor light source 110 can be emitted by the semiconductor light source 110 in the vertical direction 202 and in other directions with different beam angles, as indicated by arrows in Figure 5.
  • Figure 5 further illustrates that part of the light radiation 210 can be emitted in the direction of the aperture element 130.
  • the laterally inwardly projecting cross-sectional shape of the aperture element 130 with the undercut 135 on the inner side 132 can ensure that this radiation component is at least partially reflected on the inner side 132 of the aperture element 130 in the direction of the electronic semiconductor chip 120.
  • Such ghost images can occur in another lighting device shown in cross section in Figure 6, which has a dam 190 surrounding the semiconductor light source 110 and created by dispensing instead of the aperture element 130.
  • the dam 190 can have a poorly definable and, moreover, convex cross-sectional profile due to the manufacturing process.
  • the light radiation 210 emitted in this embodiment by the semiconductor light source 110 and also in the direction of the dam 190 can be reflected away from the relevant lighting device by reflection at the dam 190.
  • 2022PF02262 - 28 - can be flexed, as indicated in Figure 6 by dashed arrows.
  • the radiation component reflected on the dam 190 can be emitted to a downstream imaging optics and projected by the imaging optics into unintended locations in an illumination area, with the result that undesirable ghost images are present (not shown).
  • the undercut 135 of the diaphragm element 130 can prevent light radiation 210 emitted in the direction of the diaphragm element 130 from being reflected by the diaphragm element 130 away from the lighting device 100, thereby reaching an imaging optics 251 (see Figure 4) and being able to be optically imaged by it.
  • the lighting device 100 can therefore be characterized by an effective suppression of scattered light, which makes it possible to illuminate the illumination area 256 with a high contrast.
  • a further advantage of the lighting device 100 is that the diaphragm element 130 is located in the area of its rear side at the level of the semiconductor light source 110 (see, for example, Figure 3).
  • the semiconductor light source 110 has a mounting side 121 of the 2022PF02262 - 29 - electronic semiconductor chip 120 mounted pixelated light-emitting semiconductor chip 115.
  • the semiconductor chip 115 which can be a pixelated LED chip (light-emitting diode), has rear-side contact elements 116.
  • the electronic semiconductor chip 127 has corresponding contact elements 127 on the mounting side 121.
  • the contact elements 116, 127 of the semiconductor chips 115, 120 are electrically and mechanically connected to one another, for example via a solder (not shown). In this way, the light-emitting semiconductor chip 115 can be electrically controlled via the electronic semiconductor chip 120.
  • the semiconductor light source 110 also has a conversion layer 118 arranged on the light-emitting semiconductor chip 115 for radiation conversion.
  • the conversion layer 118 can be produced by spray coating and thereby, as shown in Figure 7, cover the light-emitting semiconductor chip 115 on a front side and on a circumference and also partially cover the electronic semiconductor chip 120 or the mounting side 121 thereof to the side of the light-emitting semiconductor chip 115.
  • the light-emitting semiconductor chip 115 can generate a primary light radiation, which can be partially converted into a secondary light radiation by the conversion layer 118 (not shown).
  • the primary and secondary light radiation can be a blue and yellow light radiation, so that overall a white light radiation 210 can be emitted by the semiconductor light source 110 (see Figure 5).
  • the design of the semiconductor light source 110 with the light-emitting pixels 111 indicated in Figure 2 can be implemented as follows.
  • the light-emitting semiconductor chip 115 can have a semiconductor layer sequence with light-emitting regions arranged next to one another and operable separately (not shown), which are designed to generate the primary light radiation.
  • the light-emitting pixels 111 can each be formed by a light-emitting region of the semiconductor layer sequence and a 2022PF02262 - 30 - formed by the light-emitting area in question, the area of the conversion layer 118 is irradiated. Further possible embodiments are described below which may be considered for the lighting device 100. Corresponding features and details as well as identical and equivalent components are not described in detail again below. For details, please refer to the above description instead.
  • the lighting device 110 here also has a structure with components corresponding to Figures 1 and 2, with modifications in relation to the aperture element 130 surrounding the semiconductor light source 110 with the circumferential inner undercut 135.
  • Figure 8 shows a side sectional view corresponding to Figure 3 of a section of the lighting device 100 in lighting mode according to an embodiment in which the front side 131 of the diaphragm element 130 runs in cross section at an angle to the mounting side 121 of the electronic semiconductor chip 120 and slopes laterally outwards (lateral direction 201, in Figure 8 opposite to the arrow direction shown).
  • this embodiment can suppress this radiation component from being reflected at the diaphragm element 130 and thus being emitted again in an undefined manner towards the imaging optics 251.
  • the inclined front side 231 of the diaphragm element 130 can cause the portion of radiation reflected back by the imaging optics 251 to be reflected outwards at the front side 131 and thus deflected out of the beam path.
  • This mode of operation is illustrated in Figure 8 using a reflected light radiation 211 indicated by dashed arrows.
  • Figure 9 shows a side sectional view of a section of the lighting device 100 in a design in which the cover element 130 has a section 141 on the front side 131 that projects laterally outwards (lateral direction 201, in Figure 9 opposite to the arrow direction shown).
  • the section 141 running parallel to the mounting side 121 of the electronic semiconductor chip 120 forms part or the majority of the front side 131 of the cover element 130 and is located along the entire circumference of the cover element 130 and is therefore in a circumferential form.
  • the section 141 covers the bond wires 160 at least in a region in which the bond wires 160 are connected to the contact elements 126 of the electronic semiconductor chip 120. According to the design shown in Figure 9, the section 141 also protrudes laterally from the electronic semiconductor chip 120. In this way, the cover element 130 can provide mechanical protection for the bond wires 160 in this region. This makes it possible to alternatively produce the lighting device 100 without the potting material 180, as indicated by dashed lines in Figure 9. If the potting material 180 is provided, this can, as shown in Figure 9, adjoin the outside of the cover element 130 and here the section 141, and fill a gap delimited by the cover element 130 and its section 141 and by the mounting side 121 of the electronic semiconductor chip 120.
  • Figure 10 shows a side sectional view of a section of the lighting device 100 in an embodiment in which the cover element 130 has a step-shaped recess 142 with a stop edge 145 for the potting material 180 on the front side 131.
  • the step-shaped recess 142 is formed by several adjacent and parallel and 2022PF02262 - 32 - surfaces of the aperture element 130 running perpendicular to the mounting side 121 of the electronic semiconductor chip 120.
  • the stop edge 145 is formed by adjacent surfaces of the front side 131 and recess 142 of the aperture element 130 running parallel and perpendicular to the mounting side 121.
  • the recess 142 and the stop edge 145 are located along the entire circumferential aperture element 130 and are therefore present in a circumferential form.
  • the potting material 180 can be applied in such a way that the potting material 180 additionally covers the aperture element 130 at the edge of its front side 131, as shown in Figure 10. This allows a reinforced fastening of the cover element 130 to the electronic semiconductor chip 120.
  • the stop edge 145 can stop the potting material 180 when it is applied and the cover element 130 can thus be provided with the potting material 180 on the front in a defined manner without there being a risk of the potting material 180 being introduced into the inner region 137.
  • Figure 11 shows a side sectional view of a section of the lighting device 100, in which the cover element 130 also has a front recess 142 with a stop edge 145 for the potting material 180.
  • the recess 142 shown in Figure 11 has no step shape compared to Figure 10, and only has a surface running parallel to the mounting side 121 of the electronic semiconductor chip 120 and adjacent to this a vertical and an oblique and partially curved surface.
  • the stop edge 145 which is formed by the adjacent surfaces of the front side 131 and recess 142 running parallel and perpendicular to the mounting side 121, can also bring about a defined stop when the potting material 180 is applied in this embodiment, so that the panel element 130 can additionally be covered with the potting material 180 at the edge of the front side 131, as shown in Figure 11.
  • FIG. 12 shows a side sectional view of a section of the lighting device 100 in an embodiment which represents a combination of the embodiments of Figures 8 and 11.
  • the cover element 130 has a front-side recess 142 with a stop edge 145 for the potting material 180, and furthermore a part of the front side 131, ie a partial area 147 of the front side 131 adjacent to the inner side 132, is designed to slope obliquely to the mounting side 121 of the electronic semiconductor chip 120 and laterally outward (lateral direction 201, in Figure 12 opposite to the arrow direction shown).
  • a portion of the radiation reflected back by the imaging optics 251 can be at least partially reflected outwards by the diaphragm element 130 and deflected out of the beam path (not shown in Figure 12).
  • the inner undercut 135 and the lateral inner side 132 of the diaphragm element 130 other embodiments are conceivable other than an embodiment that runs obliquely to the mounting side 121 of the electronic semiconductor chip 120.
  • Figure 13 shows a side sectional view of a section of the lighting device 100, in which the diaphragm element 130 has a convexly curved inner side 132.
  • Figure 14 illustrates in a side sectional view an inverse design of the lighting device 100, in which the cover element 130 has a concavely curved inner side 132.
  • the inner side 132 of the cover element 130 is both curved and also runs obliquely to the mounting side 121 of the electronic semiconductor chip 120.
  • a possible exemplary design for this is shown in the side sectional view of the lighting device 100 in Figure 15.
  • the inner side 132 of the cover element 130 adjacent to the front side 131 has a concavely curved inner side 132 running obliquely to the mounting side 121. 2022PF02262 - 34 - section, and a concavely curved section adjacent to the rear.
  • the cover element 130 Apart from Figure 15, further designs not shown are possible with an inner side 132 of the cover element 130 that is curved and runs at an angle to the mounting side 121.
  • the cover element 130 also has a cross-sectional shape that protrudes laterally inwards (in the lateral direction 201) in a direction (vertical direction 202) away from the mounting side 121 of the electronic semiconductor chip 120 due to the inner undercut 135.
  • inventions also offer the possibility of suppressing radiation reflection of the light radiation 210 generated by the semiconductor light source 110 and emitted in the direction of the aperture element 130 at the aperture element 130, so that the light radiation 210 is emitted by the lighting device 100 in the direction of an imaging optics 251 and ghost images are present.
  • the light radiation 210 can be reflected at least partially in the direction of the electronic semiconductor chip 120 on the inner side 132 in a manner corresponding to Figure 5 (not shown in each case).
  • the aperture element 130 can, as stated above, be formed in one piece from a material such as a plastic material.
  • embodiments made from several different materials are possible, as explained below.
  • Figure 16 shows a side sectional view of a section of the lighting device 100 in an embodiment in which the circumferential or frame-shaped cover element 130 has a circumferential lower cover section 230 and a circumferential upper cover section 231 arranged on the lower cover section 230.
  • the lower cover section 230 forms the rear side facing the electronic semiconductor chip 120 and a part of the lateral interior. 2022PF02262 - 35 - inner side and outer side 132, 133 of the aperture element 130.
  • the upper aperture section 231 forms the front side 131 facing away from the electronic semiconductor chip 120 and a further part of the lateral inner side and outer side 132, 133 of the aperture element 130.
  • the inner side 132 is designed with a convex curvature in the present case according to Figure 13.
  • the lower and upper aperture sections 230, 231 have a different material profile.
  • the upper aperture section 231 is made of a reflective material.
  • the reflective material which therefore has a white color, for example, can be a plastic material, for example a silicone material, with reflective particles or scattering particles (not shown) embedded therein. This means that the cover element 130 can be insensitive to external radiation such as sunlight.
  • the lower cover section 230 is made of a transparent or absorbent material. This can also be a plastic material such as a silicone material, which can additionally have embedded absorbent particles such as soot particles (not shown) for an absorbent design.
  • the cover element 130 with the two cover sections 230, 231 can be produced by two-component injection molding and can therefore be a two-component injection molded part.
  • a portion of the light radiation 210 generated by the semiconductor light source 110 and emitted in the direction of the diaphragm element 130 can be reflected at the upper diaphragm section 231 in the direction of the electronic semiconductor chip 120.
  • a portion of the light radiation 210 can be absorbed at the lower diaphragm section 230, or coupled into the lower diaphragm section 230 and thereby reflected at the upper 2022PF02262 - 36 - aperture section 231 or the potting material 180.
  • Figure 17 shows a side sectional view of a section of the lighting device 100 in an embodiment in which the aperture element 130 has a circumferential or frame-shaped base body 233 and two coatings 234, 235 formed on the base body 233, ie a front-side reflective coating 234 and an inside-side absorbent coating 235.
  • the shape of the aperture element 130 is determined by the base body 233.
  • the base body 233 therefore has, corresponding to the aperture element 130, a cross-sectional shape that projects laterally inwards (in the lateral direction 201) in a direction (vertical direction 202) away from the mounting side 121 of the electronic semiconductor chip 120.
  • the base body 233 can be made of a plastic material or another of the above-mentioned materials.
  • the reflective coating 233 which forms the front side 131 of the aperture element 130, can be made of a plastic or silicone material with reflective particles or scattering particles (not shown) embedded therein. Due to the reflective coating 234, the aperture element 130 can be insensitive to external radiation such as sunlight.
  • the absorbing coating 235 which forms the lateral inner side 132 of the diaphragm element 130, can be made of a plastic or silicone material with absorbing particles embedded therein, such as soot particles (not shown).
  • the light generated by the semiconductor light source 110 and emitted in the direction of the diaphragm element 130 can 2022PF02262 - 37 -
  • Light radiation 210 is essentially absorbed by the absorbing coating 235, and only a small proportion of the radiation can be reflected in the direction of the electronic semiconductor chip 120 (not shown).
  • This design also makes it possible to prevent radiation reflection on the diaphragm element 130 in the direction of the imaging optics 251 (see Figure 4) and thus the occurrence of ghost images.
  • a possible modification of the design shown in Figure 17 consists in forming the diaphragm element 130 with only one of the two coatings 234, 235.
  • the lighting device 100 can be manufactured as follows. Only some of the steps explained below are illustrated using figures. During production, components such as the carrier plate 150, the electronic semiconductor chip 120, the light-emitting semiconductor chip 115 and the aperture element 130 can be provided. The aperture element 130 can be produced separately. If the aperture element 130 is made of a plastic or silicone material, the aperture element 130 can be manufactured by a molding process such as injection molding, and in the case of the design of Figure 16 by two-component injection molding.
  • the base body 233 can be produced, for example by a molding process such as injection molding, and the base body 233 can then be provided with the coatings 234, 235 (or just one of the coatings 234, 235).
  • the manufacture of the lighting device 100 may further comprise forming the molded body 170 on the front side of the carrier plate 150, as illustrated in Figures 18 and 19 in a side sectional view and a top view.
  • components of the carrier plate 150 are shown such as 2022PF02262 - 38 - the front contact elements 156 and the heat dissipation structure 159 are not shown.
  • a molding process such as transfer molding can be carried out to form the molded body 170.
  • the molded body 170 surrounds an area within which the electronic semiconductor chip 120 can subsequently be arranged on the front of the carrier plate 150 and here on its heat dissipation structure 159, as shown in Figures 20 and 21 in a side sectional view and a top view.
  • This process can be carried out by gluing the electronic semiconductor chip 120 onto the carrier plate 150.
  • the electronic semiconductor chip 120 is already equipped with the light-emitting semiconductor chip 115 before it is mounted on the carrier plate 150.
  • the light-emitting semiconductor chip 115 can be arranged on the mounting side 121 of the electronic semiconductor chip 120 after the electronic semiconductor chip 120 has been arranged on the carrier plate 115.
  • the light-emitting semiconductor chip 115 can be mounted on the electronic semiconductor chip 120 by soldering.
  • FIG. 22 and 23 Further steps can then be carried out to provide the arrangement shown in Figures 22 and 23 in a side sectional view and top view.
  • This includes a wire bonding process in which front-side contact elements 156 of the carrier plate 150 and contact elements 126 of the electronic semiconductor chip 120 on its mounting side 121 are electrically connected to one another via bonding wires 160 (see also Figure 3).
  • the semiconductor light source 110 is provided or completed by forming the conversion layer 118 on the light-emitting semiconductor chip 115. This can be done by spray coating, so that the electronic semiconductor chip 120 on the side of the light-emitting semiconductor chip 115 can also be covered with the conversion layer 118 (see Figure 7).
  • a further step is arranging 2022PF02262 - 39 - of the separately produced aperture element 130 on the mounting side 121 of the electronic semiconductor chip 120, which can be done by gluing the aperture element 130 onto the semiconductor chip 120.
  • the steps described above can be carried out in the above-mentioned order, or in a different order.
  • the method can also be modified such that the electronic semiconductor chip 120 is provided with the aperture element 130 before it is mounted on the carrier plate 150.
  • the potting material 180 in flowable form can then be applied in order to provide the lighting device 100 shown in Figures 1 and 2.
  • the area within the molded body 170 which is delimited on the one hand by the molded body 170 and on the other hand by the electronic semiconductor chip 120 and the aperture element 130, is filled with the potting material 180.
  • the aperture element 130 serves as a barrier which prevents the potting material 180 from being introduced into the inner region 137 surrounded by the aperture element 130 and thus flooding the semiconductor light source 110 with the potting material 180.
  • the potting material 180 can be applied by casting. Another process is also possible, such as dosing with a dispenser (dispensing) or droplet-shaped application with a printing device (jetting). With regard to the method, it is also possible to produce several lighting devices 100 in a common manner.
  • the carrier plate 150 can be provided with dimensions for several lighting devices 100, and the molded body 170 can be formed on the carrier plate 150 such that the molded body 170 has several surrounding areas, in each of which an electronic semiconductor chip 120, optionally equipped with a light-emitting semiconductor chip 115 and optionally with a cover element 130, is mounted on the carrier plate 150.
  • an electronic semiconductor chip 120 optionally equipped with a light-emitting semiconductor chip 115 and optionally with a cover element 130
  • steps such as a wire bonding 2022PF02262 - 40 -
  • conversion layers 118 By forming conversion layers 118, arranging aperture elements 130 on each of the electronic semiconductor chips 120 (if not done previously) and applying the potting material 180, an arrangement of interconnected lighting devices 100 can be produced. This assembly can then be separated into separate lighting devices 100 by severing the molded body 170 and the carrier plate 150.
  • the assembly of the light-emitting semiconductor chip 115 on the electronic semiconductor chip 120 can already take place at wafer level.
  • a wafer made of interconnected electronic semiconductor chips 120 can be provided, and several light-emitting semiconductor chips 115, ie one light-emitting semiconductor chip 115 for each electronic semiconductor chip 120, can be arranged on the wafer.
  • a plurality of electronic semiconductor chips 120 equipped with a light-emitting semiconductor chip 115 can be provided in this way.
  • the aperture element 130 can be provided in a manner other than by separately producing it and placing it on the electronic semiconductor chip 120.
  • One variant, as illustrated in Figure 24, consists in forming the circumferential or frame-shaped aperture element 130 by carrying out a 3D printing process on the mounting side 121 of the electronic semiconductor chip 120.
  • This process is carried out using a 3D printer, a print head 260 of which is shown in Figure 24.
  • the aperture element 130 is made from a plastic material.
  • the aperture element 130 produced is directly adjacent to the electronic semiconductor chip 120.
  • the 3D printing process can be carried out in a state in which the electronic semiconductor chip 120 is already provided with the light-emitting semiconductor chip 115.
  • 2022PF02262 - 41 - Figure 25 shows a further embodiment for providing the aperture element 130 on the mounting side 121 of the electronic semiconductor chip 120.
  • the starting body 237 can be successively attached to the electronic semiconductor chip 120 along the desired contour of the aperture element 130 to be produced, for example by rolling it onto the electronic semiconductor chip 120.
  • the strip-shaped starting body 237 which in cross section has the profile described above with the inner undercut 135, can be produced from a flexible plastic material.
  • the strip-shaped starting body 237 can be arranged using an adhesive and thus by gluing it onto the electronic semiconductor chip 120.
  • Figure 26 shows a further embodiment for providing the cover element 130 on the mounting side 121 of the electronic semiconductor chip 120.
  • a pasty starting material 238 is applied to the electronic semiconductor chip 120 using a shaping template 270.
  • the cover element 130 produced is also directly adjacent to the electronic semiconductor chip 120.
  • the template 270 has a recess 271 for specifying the desired cross-sectional shape of the cover element 130 to be produced with the inner undercut 135.
  • the template 270 can be guided along the desired contour of the aperture element 130 to be produced above the electronic semiconductor chip 120 and the pasty starting material 238 can be pressed through the recess 271 in order to thereby successively produce the aperture element 130 on the electronic semiconductor chip 120.
  • the pasty starting material 238 can be a silicone material, for example.
  • the provision of the aperture element 130 on the electronic semiconductor chip 120 can, according to the arrangement of the 2022PF02262 - 42 - light-emitting semiconductor chips 115, also at wafer level, i.e. in a state in which a wafer made of interconnected electronic semiconductor chips 120 is present.
  • an aperture element 130 can be provided on each of the electronic semiconductor chips 120, for example by arranging a separately produced aperture element 130 or producing the aperture element 130 in another way, for example by 3D printing.
  • further embodiments not shown are conceivable, which can include further modifications and/or combinations of features. In this sense, the above information on materials and numerical information can be viewed as examples, which can be replaced by other information.
  • the designs of the panel element 130 shown in Figures 9 to 12 can be implemented with an at least partially curved inner side 132, and thus corresponding to Figures 13 to 15. Such a design can also be used, for example, for the coated panel element 130 shown in Figure 17, by designing the base body 233 accordingly.
  • a design of the panel element 130 with an inclined front side 131, as shown in Figure 8, or a design with a front recess 142 and stop edge 145, as shown in Figures 10 to 12 can be implemented in a manner corresponding to Figure 16 or Figure 17.
  • a design of the panel element 130 with a laterally projecting section 141, as shown in Figure 9 can be used in other designs such as the designs shown in Figures 8 and 10 to 17.
  • a further modification is a design corresponding to Figure 8, in which only part of the front side 131 of the panel element 130 is inclined and another part is parallel to the mounting. 2022PF02262 - 43 - day side 121 of the electronic semiconductor chip 120.
  • a further modification consists in implementing the pixelated semiconductor light source 110 not with a pixelated semiconductor chip 115, but instead with an arrangement or pixel arrangement of several light-emitting semiconductor chips such as LED chips.
  • the several semiconductor chips can be provided with a common conversion layer for radiation conversion, or with their own separate conversion layers for radiation conversion.
  • the semiconductor light source 110 can also be implemented with just one non-pixelated light-emitting semiconductor chip or LED chip and, if appropriate, a conversion layer for radiation conversion arranged thereon.
  • the electronic semiconductor chip 120 can be replaced by a different carrier substrate or chip substrate.
  • other applications for example in a projector, can be considered.

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Abstract

L'invention concerne un dispositif d'éclairage comprenant une source de lumière à semi-conducteur, un élément d'arrêt encerclant et un substrat porteur. La source de lumière à semi-conducteur et l'élément d'arrêt sont disposés sur un côté de montage du substrat porteur. La source de lumière à semi-conducteur est située dans une région interne de l'élément d'arrêt, qui est entourée par un côté interne de l'élément d'arrêt. L'élément d'arrêt, vu en coupe, a une contre-dépouille au niveau du côté interne et a ainsi une forme faisant saillie vers l'intérieur dans une direction s'éloignant du côté de montage du substrat porteur. L'invention concerne en outre un procédé de production d'un dispositif d'éclairage.
PCT/EP2024/056074 2023-03-14 2024-03-07 Dispositif d'éclairage et procédé de production d'un dispositif d'éclairage Pending WO2024188818A1 (fr)

Priority Applications (2)

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CN202480018368.2A CN120883758A (zh) 2023-03-14 2024-03-07 发光设备和用于制造发光设备的方法
DE112024000353.2T DE112024000353A5 (de) 2023-03-14 2024-03-07 Leuchtvorrichtung und verfahren zum herstellen einer leuchtvorrichtung

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DE102023106274.3A DE102023106274A1 (de) 2023-03-14 2023-03-14 Leuchtvorrichtung und verfahren zum herstellen einer leuchtvorrichtung

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DE (2) DE102023106274A1 (fr)
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DE102023106274A1 (de) 2023-03-14 2024-09-19 Ams-Osram International Gmbh Leuchtvorrichtung und verfahren zum herstellen einer leuchtvorrichtung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080290362A1 (en) * 2007-05-25 2008-11-27 Philips Lumileds Lighting Company Llc Illumination Device with a Wavelength Converting Element Held by a Support Structure Having an Aperture
US20170207202A1 (en) * 2014-07-18 2017-07-20 Koninklijke Philips N.V. Light emitting diodes and reflector
WO2018162420A1 (fr) * 2017-03-08 2018-09-13 Osram Opto Semiconductors Gmbh Composant à semi-conducteur optoélectronique
WO2019141472A1 (fr) * 2018-01-19 2019-07-25 Osram Opto Semiconductors Gmbh Composant à semi-conducteur optoélectronique
DE102021208179A1 (de) * 2021-07-29 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement
DE102023106274A1 (de) 2023-03-14 2024-09-19 Ams-Osram International Gmbh Leuchtvorrichtung und verfahren zum herstellen einer leuchtvorrichtung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006005299A1 (de) * 2006-02-06 2007-08-09 Osram Opto Semiconductors Gmbh Gehäuse für ein Lumineszenzdioden-Bauelement und Lumineszenzdioden-Bauelement
JP5482378B2 (ja) * 2009-04-20 2014-05-07 日亜化学工業株式会社 発光装置
DE102013207111B4 (de) * 2013-04-19 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
DE102015115796A1 (de) * 2015-09-18 2017-03-23 Osram Opto Semiconductors Gmbh Verfahren zum Ausbilden eines oder mehrerer dreidimensionaler Objekte
CN110323213B (zh) * 2018-03-30 2024-05-03 日亚化学工业株式会社 发光装置的制造方法
DE102021100530A1 (de) * 2021-01-13 2022-07-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080290362A1 (en) * 2007-05-25 2008-11-27 Philips Lumileds Lighting Company Llc Illumination Device with a Wavelength Converting Element Held by a Support Structure Having an Aperture
US20170207202A1 (en) * 2014-07-18 2017-07-20 Koninklijke Philips N.V. Light emitting diodes and reflector
WO2018162420A1 (fr) * 2017-03-08 2018-09-13 Osram Opto Semiconductors Gmbh Composant à semi-conducteur optoélectronique
WO2019141472A1 (fr) * 2018-01-19 2019-07-25 Osram Opto Semiconductors Gmbh Composant à semi-conducteur optoélectronique
DE102021208179A1 (de) * 2021-07-29 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement
DE102023106274A1 (de) 2023-03-14 2024-09-19 Ams-Osram International Gmbh Leuchtvorrichtung und verfahren zum herstellen einer leuchtvorrichtung

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DE112024000353A5 (de) 2025-10-02
DE102023106274A1 (de) 2024-09-19

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