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WO2024184995A1 - Electroluminescent device, and manufacturing method and display device of same - Google Patents

Electroluminescent device, and manufacturing method and display device of same Download PDF

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Publication number
WO2024184995A1
WO2024184995A1 PCT/JP2023/008270 JP2023008270W WO2024184995A1 WO 2024184995 A1 WO2024184995 A1 WO 2024184995A1 JP 2023008270 W JP2023008270 W JP 2023008270W WO 2024184995 A1 WO2024184995 A1 WO 2024184995A1
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layer
electroluminescent
stacking direction
layers
thickness
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French (fr)
Japanese (ja)
Inventor
克彦 岸本
真伸 水崎
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Sharp Display Technology Corp
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Sharp Display Technology Corp
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Priority to PCT/JP2023/008270 priority Critical patent/WO2024184995A1/en
Priority to CN202380095482.0A priority patent/CN120753026A/en
Publication of WO2024184995A1 publication Critical patent/WO2024184995A1/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19Tandem OLEDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • This disclosure relates to an electroluminescent device, a manufacturing method thereof, and a display device.
  • OLEDs Organic Light Emitting Diodes
  • Thin-film laminate-type organic EL elements using an aluminum quinolinol complex ( Alq3 ) in the electron transport layer and electroluminescent layer are known.
  • a host-guest material in which a guest compound as a dopant is added to a host compound is used as a material for the electroluminescent layer, carrier (electron, hole) transport layer, or carrier (electron, hole) injection layer of an organic EL element.
  • a fluorescent material, or a fluorescent material and a phosphorescent material are used as a guest compound (dopant) for the electroluminescent layer.
  • Improved guest compounds such as thermally activated delayed fluorescent (TADF) materials or hyperfluorescent materials are used as dopants in the electroluminescent layer.
  • TADF thermally activated delayed fluorescent
  • One aspect of the present disclosure aims to provide a technology that can fully realize the advantages of adopting a tandem structure in an electroluminescent device capable of full-color display.
  • An electroluminescent device includes an anode layer, a cathode layer facing the anode layer in a stacking direction, a plurality of electroluminescent layers disposed between the anode layer and the cathode layer in the stacking direction and in a direction intersecting the stacking direction, and a charge generation layer disposed between two adjacent electroluminescent layers in the stacking direction, and the electroluminescent layers have a plurality of electroluminescent layers emitting the same color disposed in the stacking direction, and electroluminescent layers of a first color to an n-th color (n is an integer greater than or equal to 2) emitting different colors disposed in a direction intersecting the stacking direction, and in at least one pair of the two electroluminescent layers adjacent to each other in the stacking direction via the charge generation layer, the ratio of the thickness of the electroluminescent layer on one side of the stacking direction to the thickness of the electroluminescent layer on the other side of the stacking direction is greater than 4/15
  • a display device includes the electroluminescent device described above.
  • a method for manufacturing an electroluminescent device is a method for manufacturing the above-mentioned electroluminescent device, and includes a step of forming the electroluminescent layer and the charge generation layer alternately in the stacking direction on the anode layer or the cathode layer, and forming the electroluminescent layer by a vapor deposition method.
  • FIG. 1 is a plan view illustrating a schematic configuration of a display device according to a first embodiment of the present disclosure.
  • FIG. 2 is a diagram illustrating a layer structure of the display device of FIG. 1.
  • FIG. 3 is a diagram showing a schematic layer structure of the electroluminescent element having the layer structure shown in FIG. 2 .
  • 4 is a flowchart showing an example of a method for manufacturing the electroluminescence device shown in FIG. 3 .
  • 3 is a diagram for explaining the light emitting mechanism of an electroluminescent element of the electroluminescent device shown in FIG. 2 .
  • 6 is a diagram for explaining the light emission mechanism of an electroluminescent element of an electroluminescent device according to a second embodiment of the present disclosure.
  • FIG. FIG. 11 is a diagram illustrating a layer configuration of a display device according to a third embodiment of the present disclosure.
  • 8 is a diagram for explaining the light emitting mechanism of an electroluminescent element of the electroluminescent device shown in FIG
  • the electroluminescent element according to the embodiment of the present disclosure has an anode layer, a cathode layer, an electroluminescent layer, and a charge generation layer.
  • the electroluminescent element according to the present disclosure has a plurality of electroluminescent layers overlapping in the stacking direction.
  • the thickness of one electroluminescent layer has a specific ratio to the thickness of the other electroluminescent layer.
  • the electroluminescent element according to the present disclosure may adopt a known element configuration of a light-emitting element within the range in which the layers satisfy these conditions are provided.
  • the layer configuration of the electroluminescent element according to the present disclosure will be described mainly using an OLED as an example.
  • the term “electroluminescent element” refers to a group of electroluminescent layers and various carrier functional layers arranged in the stacking direction.
  • the term “electroluminescent device” refers to a group of a plurality of electroluminescent elements in a direction intersecting the stacking direction.
  • the anode layer is one of a pair of electrode layers, an anode and a cathode, and is an electrode layer for supplying holes to each layer constituting the electroluminescent device in the present disclosure.
  • the anode layer has electrical conductivity.
  • the anode layer has optical properties, for example, of reflecting a part of visible light and transmitting the rest.
  • the anode layer includes both an electrode material that reflects visible light and an electrode material that transmits visible light.
  • a material with a relatively large work function e.g., a material with a work function of 4.5 eV or more
  • electrode materials with large work functions include Pt (5.65 eV), Ir (5.25 eV), Ni (5.2 eV), Au and Pd (5.15 eV), as well as indium tin oxide (In-Sn-O).
  • electrode materials that reflect visible light include metal materials such as Al, Mg, Li, Ag, Pd, and Cu, as well as alloys of these metal materials (e.g., APC (Ag-Pd-Cu) alloy, etc.).
  • electrode materials that transmit visible light include thin films of transparent metal oxides (e.g., indium tin oxide (In-Sn-O), indium zinc oxide (In-Zn-O), and indium gallium zinc oxide (In-Ga-Zn-O)), thin films made of metallic materials such as Al, Mg, and Ag, and nanowires (NW) made of such metallic materials.
  • transparent metal oxides e.g., indium tin oxide (In-Sn-O), indium zinc oxide (In-Zn-O), and indium gallium zinc oxide (In-Ga-Zn-O)
  • metallic materials such as Al, Mg, and Ag
  • NW nanowires
  • In-Sn-O has a relatively high work function of 4.6 to 5.0 eV, making it suitable for use as a material for the anode layer.
  • a laminate e.g., In-Sn-O/Ag in which In-Sn-O is formed on the surface of a metal material can be used to improve the electrical conductivity of the electrode layer or to add the function of reflecting visible light.
  • the cathode layer is the other of a pair of electrode layers, an anode and a cathode, and is an electrode layer for supplying electrons to each layer constituting the electroluminescent device in the present disclosure.
  • the cathode layer is disposed opposite the anode layer in the stacking direction.
  • the cathode layer has, for example, electrical conductivity and visible light transparency.
  • a material with a relatively small work function is preferably used, for example, from the viewpoint of enhancing electron injection properties.
  • electrode materials constituting the cathode layer include metal materials such as alkali metals, alkaline earth metals, and Al, alloys containing these, and nanowires (e.g., Ag nanowires, etc.).
  • alloys include alloys of Mg and Ag, and Al doped with a small amount of Li.
  • the electroluminescent layer is a layer that emits light of a predetermined color when an electric field is applied.
  • the electroluminescent layer is usually composed of a light-emitting material, but may be a laminated structure of a plurality of functional layers that exhibit the function of electroluminescence as a whole, in which two or more functional layers corresponding to two or more functions for electroluminescence in a known electroluminescent layer are overlapped, such as a layer that emits immediate light and a layer that emits delayed light.
  • the electroluminescent layer is arranged in a plurality of layers between the anode layer and the cathode layer in the stacking direction and in the direction crossing the stacking direction.
  • the electroluminescent layer has multiple electroluminescent layers emitting the same color arranged in the stacking direction.
  • the number of electroluminescent layers emitting the same color overlapping in the stacking direction is not limited, but from the viewpoints of increasing the luminous efficiency and extending the element life, it is preferably 2 or more, and more preferably 3 or more.
  • the number of electroluminescent layers emitting the same color overlapping in the stacking direction is preferably 5 or less, and more preferably 4 or less, from the viewpoints of suppressing an increase in the driving voltage, achieving a voltage resistance of the driving driver according to the driving voltage, and maintaining the flexibility of the electroluminescent element (suppressing an increase in the total thickness of the electroluminescent element).
  • the same color refers to light colors in which, when there are two or more emission peak wavelengths, all emission peak wavelengths are within a range of ⁇ 5 nm from each other, and the maximum of the full width at half maximum of all emission peak wavelengths is 1.25 times or less the minimum of the full width at half maximum of the remaining emission peak wavelengths.
  • both the host material and guest compound constituting the electroluminescent layer are the same material or similar materials having the same skeleton, they emit the same color.
  • the emission peak wavelength of each color may vary due to differences in the microcavity structure of each color. Therefore, in the top emission structure, the same color refers to light colors in which all emission peak wavelengths are within a range of ⁇ 10 nm, and the full width at half maximum satisfies the above range.
  • the electroluminescent layer is arranged in a direction intersecting the stacking direction, with electroluminescent layers of a first color to an n-th color (n is an integer greater than or equal to 2) emitting different colors.
  • different colors refer to colors of light that are not included in the same color as described above.
  • a typical known example is a three-color luminescent layer of a red luminescent layer, a green luminescent layer, and a blue luminescent layer, as a multi-color electroluminescent layer for full-color display.
  • electroluminescent layers of multiple colors in a direction intersecting the stacking direction is sometimes called "color separation.”
  • the number of electroluminescent layers of each color in the stacking direction is preferably the same for all luminescent colors.
  • the electroluminescent layer in this disclosure will be described mainly using the above three-color luminescent layers as an example, but the present disclosure is not limited to this.
  • the electroluminescent layers of different colors in the intersecting direction may be at the same position (height) in the stacking direction or at different positions (heights) (shifted).
  • an electroluminescent device when an electroluminescent device includes three electroluminescent layers of red, green, and blue, electroluminescent elements of each color are independently arranged in a direction intersecting the stacking direction, for example, a direction perpendicular to the stacking direction.
  • red electroluminescent layers are overlapped with red electroluminescent layers
  • green electroluminescent layers are overlapped with green electroluminescent layers
  • blue electroluminescent layers are overlapped with blue electroluminescent layers.
  • electroluminescent layers of different colors may be further stacked in the stacking direction, from the viewpoint of improving color purity, it is preferable that only electroluminescent layers that emit the same color are arranged in the stacking direction. Stacking only electroluminescent layers of the same color in the stacking direction is advantageous from the viewpoint of more easily determining the thickness of the electroluminescent layer described later.
  • optimizing the supply of carriers (electrons and/or holes) in the electroluminescent layer on one side of the stacking direction relative to the charge generation layer may cause the supply of electrons and/or holes to be rate-limiting, i.e., insufficient, in the electroluminescent layer on the other side.
  • an imbalance in the carrier balance may occur between the multiple electroluminescent layers.
  • the thickness of the electroluminescent layer in which the supply of carriers (electrons and/or holes) is rate-limiting is appropriately changed relative to the thickness of the adjacent electroluminescent layer in the stacking direction, thereby optimizing the carrier balance of all electroluminescent layers in the stacking direction.
  • the ratio of the thickness of the electroluminescent layer on one side in the stacking direction to the thickness of the electroluminescent layer on the other side in the stacking direction is greater than 4/15 and smaller than 2/3.
  • the thickness of a specific electroluminescent layer is thinner than the thickness of the electroluminescent layer adjacent to it on the anode layer side or the electroluminescent layer adjacent to it on the cathode layer side by the above ratio.
  • adjacent in electroluminescent layers means that the electroluminescent layers included in the electroluminescent element are adjacent to each other in the stacking direction in terms of their positional relationship. In other words, another layer may be interposed between the electroluminescent layers adjacent to each other in the stacking direction.
  • the electroluminescent device of the present disclosure may also be configured to include an electroluminescent layer in which the thickness of the electroluminescent layer gradually decreases at a specific ratio from the anode layer side to the cathode layer side in the stacking direction, or the thickness of the electroluminescent layer gradually decreases at a specific ratio from the cathode layer side to the anode layer side.
  • Which side (cathode layer side or anode layer side) of adjacent electroluminescent layers in the stacking direction should have its thickness reduced by the above ratio can be determined according to the type of carrier that is rate-limiting and the location of the electroluminescent layer where the carrier is rate-limiting. For example, when either or both of the electrons supplied (injected and/or moved) from the cathode layer and the holes supplied from the charge generation layer are rate-limiting, the thickness of the electroluminescent layer on the cathode layer side in the stacking direction can be made thinner.
  • the thickness of the electroluminescent layer on the anode layer side in the stacking direction can be made thinner.
  • the thickness of the electroluminescent layer with the larger carrier balance imbalance can be made thinner depending on the magnitude of the carrier balance imbalance between the electroluminescent layers, that is, the thickness of the electroluminescent layer with the larger carrier balance imbalance can be made thinner.
  • each electroluminescent layer in the stacking direction is optimized.
  • the thickness of each electroluminescent layer in the stacking direction can be appropriately determined depending on various factors, such as the combination of materials of each layer in the electroluminescent element and the purpose of changing the thickness of the electroluminescent layer, as long as it is in accordance with the technical concept of the present disclosure.
  • the ratio of the thickness of the electroluminescent layer on one side of the stacking direction to the thickness of the electroluminescent layer on the other side of the stacking direction is too small, the effect of correcting the carrier balance is small, and excess carriers are generated. Therefore, a current that does not contribute to light emission is generated, and power consumption may increase.
  • the ratio is too large, one of the carriers (electrons or holes) that generate excitons (excitons) in the electroluminescent layer described later may be clearly insufficient, and the expected light-emitting characteristics (exciton generation ability) of the electroluminescent layer may not be fully expressed.
  • the above ratio is preferably greater than 4/15 from the viewpoint of suppressing the generation of excess carriers, and is preferably smaller than 2/3 from the viewpoint of fully expressing the light-emitting characteristics of the electroluminescent layer.
  • the above ratio is more preferably 1/3 or more, and more preferably 1/2 or less, from the viewpoint of making it easier to change the thickness of each electroluminescent layer in the stacking direction.
  • the electroluminescent device of the present disclosure By arranging a set of two electroluminescent layers with the above-mentioned specific ratio among the multiple electroluminescent layers arranged in the stacking direction, it is possible to reduce the unnecessary thickness that does not contribute to light emission in each electroluminescent layer. This makes it possible to reduce the driving voltage and the amount of material used. Furthermore, in the electroluminescent device of the present disclosure, the current injected into the electroluminescent element having multiple electroluminescent layers in the stacking direction can be made to contribute to light emission with less waste. Therefore, the electroluminescent device of the present disclosure can further improve the light emission efficiency compared to a conventional electroluminescent device with a tandem structure having multiple electroluminescent layers of the same thickness.
  • each electroluminescent layer may be changed by the above ratio for only one color of an electroluminescent layer in an electroluminescent device having electroluminescent layers of multiple colors in a direction intersecting the stacking direction, or the thickness of any two or more colors may be changed uniformly or independently by the above ratio, within the range where the effects of the present disclosure can be obtained.
  • the thickness ratio of each electroluminescent layer in the stacking direction may be constant for each luminescent color, or may be a different ratio within the above range.
  • the direction in which the thickness of the electroluminescent layer included in the electroluminescent element is changed in the stacking direction may be determined for each luminescent color within the range in which the effects of the present disclosure can be obtained.
  • the thickness of the electroluminescent layer of some luminescent colors may be set to decrease from one side to the other side, and the thickness of the electroluminescent layer of some other luminescent colors may be set to decrease from the other side to one side.
  • the direction in which the thickness of the electroluminescent layer in the stacking direction is changed and the individual thicknesses are determined, for example, according to the combination of materials of each layer in the electroluminescent device.
  • the thickness of each electroluminescent layer in the stacking direction can be determined as a thickness according to the purpose by evaluating the carrier injection property and/or carrier transport property between each layer in the electroluminescent device by simulation and conducting a demonstration experiment based on the evaluation. In this case, by setting the multiple electroluminescent layers stacked in the stacking direction to be only the same color, the parameters of the carrier injection property and carrier transport property between different electroluminescent layers in the stacking direction can be made the same. This makes the simulation easier and makes it possible to determine the thickness of each electroluminescent layer more simply.
  • a preferred electroluminescent layer in the present disclosure is a host-guest electroluminescent layer that contains a host compound and a guest compound.
  • a host-guest electroluminescent layer contains a small amount (e.g., about 0.1 to several mol%) of a fluorescent dopant or the like as a guest compound in a solid medium that is a host compound.
  • a fluorescent dopant or the like as a guest compound in a solid medium that is a host compound.
  • the device life of the electroluminescent element is also improved dramatically.
  • the dopant which is a guest compound, functions as a trap for carriers (electrons or holes) in the solid medium of the host compound, becoming a carrier recombination center and directly creating excitons in the solid medium.
  • the process in which the created excitons relax to the ground state is called the deactivation process.
  • the deactivation process includes a non-radiative process (thermal deactivation) and a radiative process (luminescence), and electroluminescence is the phenomenon in which luminescence occurs through the radiative process.
  • the guest compound functioning as a carrier trap, not only is the quantum efficiency of the electroluminescent layer improved, but the device life is also improved due to the increased probability of carrier recombination. As a result, the luminous efficiency of the electroluminescent layer and the device life of the electroluminescent element are improved.
  • the host-guest electroluminescent layer can effectively utilize carriers, and therefore the electroluminescent device disclosed herein can achieve high luminous efficiency of the electroluminescent layer and improved device life of the electroluminescent element.
  • the excitons generated during carrier recombination are classified into singlet excitons and triplet excitons.
  • a fluorescent dopant used as the guest compound, singlet excitons contribute to light emission.
  • a phosphorescent dopant used instead of a fluorescent dopant, triplet excitons contribute to light emission.
  • the generation ratio of singlet excitons and triplet excitons is 25% for singlet excitons and 75% for triplet excitons. Therefore, when a fluorescent dopant is used as the guest compound, that is, in the process of light emission of "fluorescence" emitted only from singlet excitons, the probability of generating excitons that can contribute to light emission is at most 25%.
  • Examples of light-emitting materials constituting the blue electroluminescent layer include pyrene-based compounds and anthracene-based compounds, which are fluorescent dopants.
  • examples of light-emitting materials constituting the red electroluminescent layer and the green electroluminescent layer include iridium complexes and palladium complexes, which are phosphorescent dopants.
  • complexes containing platinum group elements such as iridium or palladium that are used as phosphorescent dopants are very expensive even in small amounts, due to the fact that platinum group elements are produced in small quantities and are unevenly distributed, and it can be difficult to obtain a stable supply. Therefore, reducing the use of phosphorescent dopants that use these platinum group complexes is extremely important from the perspective of cost reduction and economic security.
  • a host-guest electroluminescent layer can be formed by doping a host compound with a guest compound.
  • a host-guest electroluminescent layer can be formed by a co-evaporation method using multiple evaporation sources.
  • host-guest electroluminescent layer materials can be used.
  • host compounds include known luminescent layer materials of each color.
  • guest compounds include the above-mentioned fluorescent dopants and phosphorescent dopants, as well as TADF and hyperfluorescent materials.
  • fluorescent dopants include perylene, DPT, Coumarin 6, PMDFB, quinacridone, rubrene, BTX, ABTX, DCM, and DCJT.
  • phosphorescent dopants include Ir(ppy) 3 , Ir(thpy) 3 , Ir(t5m-thpy) 3 , Ir(t- 5CF3 -py) 3 , Ir(t-5t-py) 3 , Ir(mt-5mt-py) 3 , Ir(btpy) 3 , Ir(tflpy) 3 , Ir(piq) 3 , Ir(tiq) 3 , Ir(fliq) 3 , FIrpic, FIr6, ppy, tpy, bzq, thp, op, bo, bt, bon, ⁇ -bsn, btp, ppo, C6, pq, ⁇ -bsn, and ppz.
  • a fluorescent dopant is used as the guest compound in the electroluminescent layer that emits blue light
  • a phosphorescent dopant is used as the guest compound in the electroluminescent layers that emit red and green light.
  • the quantum efficiency of the fluorescent dopant is lower than that of the phosphorescent dopant, both theoretically and in practice. Therefore, in the above electroluminescent devices, the amount of light emitted may be balanced by making the amount of current passed through the blue electroluminescent layer greater than the amount of current passed through the red and green electroluminescent layers.
  • the total number of stacked blue electroluminescent layers in the stacking direction may be made greater than the total number of stacked red and green electroluminescent layers, which are phosphorescent electroluminescent layers in which the guest compound is a phosphorescent dopant.
  • the total number of stacked fluorescent electroluminescent layers may be made greater than the total number of stacked phosphorescent electroluminescent layers.
  • the total number of stacked fluorescent electroluminescent layers is preferably one or two more than the total number of stacked phosphorescent electroluminescent layers. If the number of fluorescent electroluminescent layers is three or more more than the number of phosphorescent electroluminescent layers, it may be difficult to balance the life and the amount of light emitted between the phosphorescent electroluminescent layers of different colors. Or, the balance of the element structure of the electroluminescent device may be poor, resulting in a low manufacturing yield.
  • a material containing an organic hole transport material and an organic electron accepting material (hole supply material) added in the range of 1 to 10% can be used.
  • organic hole transport material a known triarylamine organic compound can be used.
  • An example of an organic electron accepting material is tetracyanoquinodimethane tetrafluoride (TCNQ-4F).
  • TCNQ-4F tetracyanoquinodimethane tetrafluoride
  • a material with sufficient hole generation ability is realized using all organic materials, such as the hole transport material and electron accepting material described above.
  • the present disclosure realizes an electroluminescent device with a tandem structure having multiple electroluminescent layers in the stacking direction that suppress the generation of excess carriers and have excellent power consumption.
  • the electroluminescent device of the present disclosure may further include other layers as long as the effects of the present disclosure can be obtained.
  • Examples of other configurations include carrier functional layers such as a hole injection layer, an electron injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, and an electron transport layer.
  • the hole injection layer is disposed, for example, adjacent to the anode layer.
  • the hole injection layer may be composed of a hole transport material and an electron accepting material. These materials are the same organic materials as those described for the p-type charge generation layer, and the specific material of the hole injection layer in the electroluminescent device may be the same as that of the p-type charge generation layer, or may be different.
  • the electron injection layer is disposed adjacent to the cathode layer, for example.
  • the electron injection layer may be made of an electron transport material. Examples of electron transport materials constituting the electron injection layer include lithium fluoride (LiF), which is an inorganic material.
  • the electron injection layer may be configured by forming an electron transport material from an organic material such as an oxadiazole compound, and doping it with a metal material (e.g., Li or Yb).
  • the LiF used in the electron injection layer exhibits excellent electron injection properties.
  • the deposition of the carrier function layer which contains inorganic materials such as Yb, not limited to LiF, is generally carried out at a higher temperature than the deposition of the electroluminescent layer and carrier function layer, which are made of organic materials, because the melting point of the inorganic material is high. This raises the risk of thermal damage to the organic material deposited earlier. Therefore, it is preferable to form the electroluminescent element using only organic materials, whenever possible.
  • organic electron injection materials such as BUPH1, BPen, p-MeO-Phen, p-NMe 2 -Phen and p-Pyrrd-Phen have been developed as they can have sufficient characteristics when combined with a cathode layer made of aluminum (Al) or the like, which can form a vapor deposition layer at a relatively low temperature.
  • the electron injection ability of an electron injection layer made of an organic material is still inferior to that of an electron injection layer made of an inorganic material such as LiF. Therefore, when an electron injection layer made of an organic material is disposed adjacent to a cathode layer, the amount of electrons supplied to the electroluminescent layer formed on the cathode layer side may decrease.
  • the thickness of the electroluminescent layer on the cathode layer side is made thinner than the theoretical value in order to reduce the effect of the reduction in the amount of electrons supplied, thereby allowing the advantages of adopting a tandem structure to be fully realized.
  • the hole transport layer can be composed of an organic hole transport material, for example, a triarylamine organic compound.
  • the electron blocking layer like the hole transport layer, can be made of an organic hole transport material.
  • the material of the electron blocking layer can be the same as or different from that of the hole transport layer.
  • the hole blocking layer may be composed of an organic electron transport material, such as an oxadiazole compound.
  • the material of the hole blocking layer may contain lithium quinoline (Liq) in addition to the electron transport material.
  • the electron transport layer can be composed of the organic electron transport material described above.
  • the material of the electron transport layer can be the same as or different from that of the hole blocking layer.
  • the hole injection layer and electron injection layer may be arranged corresponding to the electrode layers, and are usually arranged adjacent to each electrode layer in the stacking direction.
  • the hole transport layer, electron blocking layer, the electroluminescent layer, the hole blocking layer, the electron transport layer, and the charge generation layer may be arranged in a repeated manner in the stacking direction of the electroluminescent element.
  • the electroluminescent device of the present disclosure is suitable for a top-emission type electroluminescent device capable of full-color display.
  • the light extraction efficiency may be improved by utilizing the microcavity effect by adjusting the distance between the electrode layers according to the wavelength of light from the light-emitting layers of each color.
  • one of the layers of the carrier functional layer may be made thicker.
  • the electroluminescent device of the present disclosure has a so-called tandem structure that includes multiple electroluminescent layers and carrier functional layers corresponding to each electroluminescent layer in the stacking direction. Therefore, the thickness of the carrier functional layer for adjusting the distance between the electrode layers is suppressed, making it possible to further suppress the consumption of functionally unnecessary materials.
  • the stack is a set of layers including one electroluminescent layer disposed between the anode layer and the charge generation layer, between the charge generation layers, and between the charge generation layer and the cathode layer in the stacking direction.
  • the stack may include a carrier functional layer in addition to the one electroluminescent layer.
  • a plurality of stacks may be disposed between the anode layer and the cathode layer in the stacking direction. In the present disclosure, the anode layer, the cathode layer, and the charge generation layer are not included in the stack.
  • the thickness of the stack is determined so that the amount of light emitted in the electroluminescent layer is a theoretical value or a value close to it.
  • the thickness of each electroluminescent layer in the stacking direction can be set within the range of the ratio described above, so from the viewpoint of increasing the light-emitting efficiency of the electroluminescent device, it is preferable to set the thickness of the stack according to the thickness of the electroluminescent layer set in this way. From this viewpoint, the ratio of the thickness of the electroluminescent layer in the stack to the thickness of the stack in the stacking direction is preferably 0.05 or more and preferably 0.35 or less.
  • the thickness of the stack is determined by the sum of the thicknesses of the electroluminescent layer and the carrier functional layer in the stack, but among the electroluminescent layer and the carrier functional layer, layers with a very small thickness (for example, layers that may have a thickness of less than 1 nm) may be ignored when calculating the thickness of the stack.
  • the thickness of each electroluminescent layer is controlled so that the ratio of the thickness of the electroluminescent layer on one side of the stacking direction to the thickness of the electroluminescent layer on the other side of the stacking direction, which are adjacent to each other in the stacking direction via a charge generation layer, is greater than 4/15 and smaller than 2/3.
  • the electroluminescent device of the present disclosure can be manufactured by a known manufacturing method capable of manufacturing an electroluminescent device having a plurality of electroluminescent layers (tandem structure).
  • the manufacturing method of the electroluminescent device may be a method including a step of forming an electroluminescent layer and a charge generation layer alternately in the stacking direction on an anode layer or a cathode layer.
  • at least the electroluminescent layer is formed by a vapor deposition method in the manufacturing method.
  • the electroluminescent layer formed by the vapor deposition method is generally preferable from the viewpoint of high brightness and low voltage driving, and is also preferable from the viewpoint of realizing a high-definition display device because an electroluminescent device consisting of fine pixels can be formed with high precision.
  • a co-evaporation method using a plurality of evaporation sources it is more preferable because it is possible to form a host-guest electroluminescent layer.
  • the electroluminescent device of the present disclosure has a specific layer structure repeated, and therefore can be manufactured by repeating the formation of a specific layer multiple times.
  • the conditions other than the deposition time in forming the electroluminescent layer for example, the deposition rate controlled by the crucible temperature (deposition temperature) or deposition temperature, the ratio of the host compound to the guest compound (doping concentration of the guest compound), and the deposition mask that defines the pixel shape, etc.). Therefore, the variation in characteristics due to changes in the conditions of each electroluminescent layer in the stacking direction is suppressed, and the effect due to the difference in thickness of the electroluminescent layer in the stacking direction can be more significantly expressed.
  • the display device according to the present disclosure includes the electroluminescent device described above.
  • the display device according to the present disclosure can be configured in the same manner as a known display device having a known light-emitting device, except for having the electroluminescent device described above.
  • Examples of the display device include a television set and a smartphone.
  • electroluminescent device its manufacturing method, and display device of the present disclosure will be described in more detail with reference to the drawings, taking an electroluminescent device equipped with an organic light emitting diode (OLED) as an example.
  • OLED organic light emitting diode
  • a code indicating the color is further added to the code of the basic configuration.
  • the code R is further added to the configuration related to red
  • the code G is further added to the configuration related to green
  • the code B is further added to the configuration related to blue.
  • Fig. 1 is a plan view showing a schematic configuration of a display device 100 according to a first embodiment of the present disclosure.
  • Fig. 1 shows a smartphone as an example of a display device.
  • the display device 100 includes a frame area NDA and a display area DA.
  • the display area DA of the display device 100 includes a plurality of pixels PIX, each of which includes a red sub-pixel RSP, a green sub-pixel GSP, and a blue sub-pixel BSP.
  • one pixel PIX may include subpixels of other colors in addition to the red subpixel RSP, green subpixel GSP, and blue subpixel BSP.
  • FIG. 2 is a diagram showing a schematic layer structure of the display device 100 in FIG. 1.
  • the display device 100 has a substrate 11, a buffer layer 12, a TFT (thin film transistor) layer 20 including pixel circuits, an electroluminescent device 13 and an edge cover film 16, a sealing layer 14, and an external functional layer 15 laminated in this order.
  • TFT thin film transistor
  • the substrate 11 is a glass substrate or a flexible substrate whose main component is a resin such as polyimide.
  • the substrate 11 can be made of two polyimide films and an inorganic film sandwiched between them.
  • the buffer layer 12 can be made of an inorganic insulating layer that prevents the intrusion of foreign matter such as water and oxygen.
  • the TFT layer 20 includes pixel circuits that control the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.
  • the electroluminescent device 13 includes a red electroluminescent element 10R, a green electroluminescent element 10G, and a blue electroluminescent element 10B.
  • the red electroluminescent element 10R includes an anode layer 21R and a cathode layer 22R, and includes a first electroluminescent layer 34R and a second electroluminescent layer 53R between these electrode layers.
  • the green electroluminescent element 10G includes an anode layer 21G, a first electroluminescent layer 34G, a second electroluminescent layer 53G, and a cathode layer 22G
  • the blue electroluminescent element 10B includes an anode layer 21B, a first electroluminescent layer 34B, a second electroluminescent layer 53B, and a cathode layer 22B.
  • FIG. 2 shows a configuration in which the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B are provided with the cathode layer 22R, the cathode layer 22G, and the cathode layer 22B, respectively.
  • the electroluminescent device 13 of the present disclosure is not limited to this configuration.
  • the cathode layer 22R, the cathode layer 22G, and the cathode layer 22B may be a common electrode layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.
  • the sealing layer 14 that covers the electroluminescent device 13 is a layer that prevents foreign substances such as water and oxygen from penetrating into the electroluminescent device 13, and can be composed of, for example, two layers of inorganic sealing films and an organic film formed between them.
  • the external functional layer 15 is a layer that adds various functions to the display device 100, such as optical control, a touch sensor, and surface protection.
  • the edge cover film 16 is insulating and covers the edges of each anode layer 21R, 21G, 21B.
  • the edge cover film 16 is formed by applying an organic material such as polyimide or acrylic resin, and then patterning it by photolithography.
  • the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B are, for example, organic light emitting diodes (OLEDs).
  • FIG. 3 is a schematic diagram showing the layer configuration of the electroluminescent element having the layer configuration shown in FIG. 2.
  • the substrate 11, buffer layer 12, and TFT layer 20 are stacked in this order, and the electroluminescent element 10 is configured by stacking an anode layer 21, a set of layers 30, a first charge generation layer 40, a set of layers 50, and a cathode layer 22 on the TFT layer 20 in this order.
  • the electroluminescent element 10 according to the present disclosure is of a top emission type (a structure in which light is extracted from the upper side, i.e., the cathode layer 22 side).
  • the anode layer 21 functions as the anode
  • the cathode layer 22 functions as the cathode.
  • the layer set 30 is composed of a hole injection layer 31, a first hole transport layer 32, a first electron blocking layer 33, a first electroluminescent layer 34, a first hole blocking layer 35, and a first electron transport layer 36.
  • the layer set 50 is composed of a second hole transport layer 51, a second electron blocking layer 52, a second electroluminescent layer 53, a second hole blocking layer 54, a second electron transport layer 55, and an electron injection layer 56.
  • a first charge generation layer 40 including an n-type first charge generation layer (electron generation layer) 41 and a p-type first charge generation layer (hole generation layer) 42 is disposed.
  • the layer set 30 is also called a "first stack”
  • the layer set 50 is also called a "second stack”.
  • the layer set 30, the first charge generation layer 40, and the layer set 50 constitute an organic laminate 60.
  • the hole injection layer 31, the first hole transport layer 32, the first electron blocking layer 33, the first hole blocking layer 35, the first electron transport layer 36, the first n-type charge generation layer 41, the first p-type charge generation layer 42, the second hole transport layer 51, the second electron blocking layer 52, the second hole blocking layer 54, the second electron transport layer 55, and the electron injection layer 56 are carrier functional layers that contribute to at least one of the injection, movement, and generation of carriers (electrons or holes).
  • the electroluminescent element 10 is an electroluminescent element of a so-called tandem structure in which two electroluminescent layers, a first electroluminescent layer 34 and a second electroluminescent layer 53, are disposed between the anode layer 21 and the cathode layer 22 in the stacking direction.
  • the first electroluminescent layer 34 and the second electroluminescent layer 53, which are stacked in the stacking direction, are both electroluminescent layers that emit the same color.
  • the thickness of the first electroluminescent layer 34 varies depending on the luminescent color.
  • the thickness of the first electroluminescent layer 34 of the red electroluminescent element and the green electroluminescent element is 25 nm to 50 nm, and the thickness of the first electroluminescent layer 34 of the blue electroluminescent element is 10 to 25 nm.
  • the ratio (T2/T1) of the thickness (T2) of the second electroluminescent layer 53 to the thickness (T1) of the first electroluminescent layer 34 is greater than 4/15 and less than 2/3. More preferably, the ratio of the thickness of the second electroluminescent layer 53 to the thickness of the first electroluminescent layer 34 is greater than 1/3 and less than 1/2. Both the first electroluminescent layer 34 and the second electroluminescent layer 53 are host-guest electroluminescent layers.
  • Fig. 4 is a flow chart showing an example of a method for manufacturing the electroluminescent element shown in Fig. 3.
  • an anode layer 21 is formed on the TFT layer 20. Specifically, an Ag layer and an In-Sn-O layer are formed in sequence using a sputtering method.
  • a hole injection layer 31 is formed on the anode layer 21.
  • the hole transport material and the electron acceptor material are co-evaporated at a predetermined deposition rate by adjusting the deposition temperature and deposition time of each material so that they are laminated at a predetermined film thickness and ratio.
  • a deposition film is formed uniformly over the entire surface of the workpiece without using a fine metal mask.
  • each carrier functional layer may be different for each color, for example, depending on the electroluminescent layer of each color.
  • a carrier functional layer having a partially different thickness in this way can be formed by vapor deposition through a mask.
  • a first hole transport layer 32 is formed on the hole injection layer 31.
  • the hole transport material is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the layer is deposited to a predetermined thickness.
  • the evaporated film is formed without using a fine metal mask.
  • a first electron blocking layer 33 is formed on the first hole transport layer 32.
  • the hole transport material is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the hole transport material is deposited to a predetermined thickness.
  • a fine metal mask is used to evaporate the material to a first thickness corresponding to each color.
  • the first thickness may be the same for the electroluminescent element of each color, or it may be different.
  • the first electroluminescent layer 34 is formed on the first electron blocking layer 33.
  • the host compound and the guest compound (dopant) are co-evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the layers are laminated with a predetermined film thickness and guest compound concentration (dopant concentration).
  • a fine metal mask is used to evaporate materials according to each color while precisely controlling the thickness and guest compound concentration.
  • the first electroluminescent layer 34 is evaporated so that the ratio of the thickness of the first electroluminescent layer 34 to the thickness of the layer set 30 in the stacking direction is 0.05 to 0.35.
  • step S6 the first hole blocking layer 35 is formed on the first electroluminescent layer 34.
  • the deposition temperature and deposition time are adjusted to deposit an electron transport material at a predetermined deposition rate so that the material is deposited to a predetermined thickness.
  • the deposition film is formed without using a fine metal mask.
  • the first electron transport layer 36 is formed on the first hole blocking layer 35.
  • the deposition temperature and deposition time are adjusted to deposit the electron transport material at a predetermined deposition rate so that the layer is formed to a predetermined thickness.
  • the deposition may be co-deposition of the electron transport material and lithium quinoline.
  • the deposition film is formed without using a fine metal mask.
  • step S8 the n-type first charge generation layer 41 is formed on the first electron transport layer 36.
  • co-evaporation of an organic electron transport material and an inorganic metal material, Yb or Li, which is an electron supply material is performed at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the layers are laminated to a predetermined film thickness and ratio.
  • the evaporated film is formed without using a fine metal mask.
  • a p-type first charge generation layer 42 is formed on the n-type first charge generation layer 41.
  • the co-evaporation of an organic hole transport material and an organic electron acceptor material is performed at a predetermined deposition rate by adjusting the deposition temperature and deposition time of each material so that the material is laminated at a predetermined film thickness and ratio.
  • the deposition film is formed without using a fine metal mask.
  • the second hole transport layer 51 is formed on the p-type first charge generation layer 42.
  • the hole transport material is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the hole transport material is deposited to a predetermined thickness.
  • the evaporated film is formed without using a fine metal mask.
  • a second electron blocking layer 52 is formed on the second hole transport layer 51.
  • the hole transport material is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the hole transport material is deposited to a predetermined thickness.
  • a fine metal mask is used to evaporate the material to a second thickness corresponding to each color.
  • the second thickness may be the same or different for the electroluminescent elements of each color.
  • the second electroluminescent layer 53 is formed on the second electron blocking layer 52.
  • the host compound and the guest compound (dopant) are co-evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the layers are laminated to a predetermined film thickness and guest compound concentration (dopant concentration).
  • a fine metal mask is used to evaporate materials according to each color while precisely controlling the thickness and guest compound concentration of each.
  • the electron injection from the cathode layer 22 is lower than the hole injection from the anode layer 21, and/or the hole injection from the p-type first charge generation layer 42 is lower than the electron injection from the n-type first charge generation layer 41. More specifically, it is assumed that the amount of electron injection from the cathode layer 22 is lower than the amount of hole injection from the anode layer 21, and/or the amount of hole injection from the p-type first charge generation layer 42 is lower than the amount of electron injection from the n-type first charge generation layer 41.
  • the difference between the electron injection from the cathode layer 22 and the hole injection from the p-type first charge generation layer 42 is greater than the difference between the hole injection from the anode layer 21 and the electron injection from the n-type first charge generation layer 41, i.e., the difference between the electron injection amount and the hole injection amount in the second electroluminescent layer 53 is greater than the difference between the electron injection amount and the hole injection amount in the first electroluminescent layer 34.
  • the second electroluminescent layer 53 is deposited so that the ratio of the thickness of the second electroluminescent layer 53 to the thickness of the first electroluminescent layer 34 in the stacking direction is greater than 4/15 and less than 2/3.
  • the ratio of the thickness of the second electroluminescent layer 53 to the thickness of the first electroluminescent layer 34 is greater than or equal to 1/3 and less than or equal to 1/2.
  • the second electroluminescent layer 53 is deposited so that the ratio of the thickness of the second electroluminescent layer 53 to the thickness of the set of layers 50 in the stacking direction is greater than or equal to 0.05 and less than or equal to 0.35.
  • the electron injection from the cathode layer 22 is higher than the hole injection from the anode layer 21, and/or the hole injection from the p-type first charge generation layer 42 is higher than the electron injection from the n-type first charge generation layer 41. More specifically, the amount of electron injection from the cathode layer 22 is higher than the amount of hole injection from the anode layer 21, and/or the amount of hole injection from the p-type first charge generation layer 42 is higher than the amount of electron injection from the n-type first charge generation layer 41.
  • the second hole blocking layer 54 is formed on the second electroluminescent layer 53. Specifically, the deposition temperature and deposition time are adjusted to deposit an electron transport material at a predetermined deposition rate so that the material is deposited to a predetermined thickness.
  • the deposition film is formed without using a fine metal mask.
  • step S14 the second electron transport layer 55 is formed on the second hole blocking layer 54.
  • the deposition temperature and deposition time are adjusted to deposit the electron transport material at a predetermined deposition rate so that the layer is formed to a predetermined thickness. Co-deposition of the electron transport material and lithium quinoline may also be performed.
  • the deposition film is formed without using a fine metal mask.
  • step S15 an electron injection layer 56 is formed on the second electron transport layer 55.
  • lithium fluoride is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that a layer with a predetermined thickness is formed.
  • the evaporated film is formed without using a fine metal mask.
  • step S16 the cathode layer 22 is formed on the electron injection layer 56.
  • a magnesium-silver alloy thin film is formed using a deposition method.
  • Fig. 5 is a diagram for explaining the light emitting mechanism of the electroluminescent element 10 of the electroluminescent device 13 shown in Fig. 2. In Fig. 5, only the essential parts of the configuration of the electroluminescent element 10 are shown.
  • the electroluminescent element 10 shown in FIG. 5 is an organic EL element having a tandem structure in which two electroluminescent layers, a first electroluminescent layer 34 and a second electroluminescent layer 53, are formed between an anode layer 21 and a cathode layer 22.
  • a first charge generation layer 40 is disposed between the first electroluminescent layer 34 and the second electroluminescent layer 53.
  • the first electroluminescent layer 34 and the second electroluminescent layer 53 that emit light of the same color are laminated for each of the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.
  • the red electroluminescent element 10R the anode layer 21R, the first electroluminescent layer 34R, the first charge generation layer 40R, the second electroluminescent layer 53R, and the cathode layer 22R are arranged in this order.
  • the set of layers 30R including the first electroluminescent layer 34R, which is arranged between the anode layer 21R and the first charge generation layer 40R in the stacking direction is the first stack.
  • the set of layers 50R including the second electroluminescent layer 53R which is arranged between the first charge generation layer 40R and the cathode layer 22R, is the second stack.
  • the anode layer 21G, the first electroluminescent layer 34G, the first charge generation layer 40G, the second electroluminescent layer 53G, and the cathode layer 22G are arranged in this order.
  • the first stack in the green electroluminescent element 10G is a set of layers 30G including the first electroluminescent layer 34G, which is arranged between the anode layer 21G and the first charge generation layer 40G in the stacking direction.
  • the second stack in the green electroluminescent element 10G is a set of layers 50G including the second electroluminescent layer 53G, which is arranged between the first charge generation layer 40G and the cathode layer 22G.
  • blue electroluminescent element 10B anode layer 21B, first electroluminescent layer 34B, first charge generation layer 40B, second electroluminescent layer 53B, and cathode layer 22B are stacked in this order.
  • the first stack in blue electroluminescent element 10B is a set of layers 30B including first electroluminescent layer 34B, which is disposed between anode layer 21B and first charge generation layer 40B in the stacking direction.
  • the second stack in blue electroluminescent element 10B is a set of layers 50B including second electroluminescent layer 53B, which is disposed between first charge generation layer 40B and cathode layer 22B.
  • cathode layers 22R, 22G, and 22B are provided for each of the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.
  • the cathode layers 22R, 22G, and 22B may be a common electrode layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.
  • a sealing layer 14 is shown provided at the top of each of the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B to prevent the intrusion of oxygen and moisture.
  • the sealing layer 14 may also be a common layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.
  • the layer assemblies 30R, 30G and 30B, 50R, 50G and 50B included in the electroluminescent elements 10R, 10G and 10B of the respective colors have carrier functional layers (electron injection layer, electron transport layer, hole transport layer, hole injection layer, etc.) arranged therein.
  • the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B all have the same light emission mechanism, so the symbols R, G, and B that indicate the colors added to the symbols indicating each basic configuration will be omitted.
  • the first electroluminescent layer 34 to generate electron-hole pairs (also called excitons), which transition to the ground state to emit light in a predetermined wavelength range.
  • electrons and holes recombine in the second electroluminescent layer 53 to generate electron-hole pairs, which transition to the ground state to emit light in a predetermined wavelength range (light of the same color as the first electroluminescent layer 34).
  • the first electroluminescent layer 34R and the second electroluminescent layer 53R of the red electroluminescent element 10R each emit red light.
  • first electroluminescent layer 34G and the second electroluminescent layer 53G of the green electroluminescent element 10G each emit green light
  • first electroluminescent layer 34B and the second electroluminescent layer 53B of the blue electroluminescent element 10B each emit blue light.
  • the first electroluminescent layer 34 and the second electroluminescent layer 53 can both emit light with a luminous efficiency substantially equal to the theoretical value. Therefore, each of the multiple light-emitting layers of the same color arranged in the stacking direction emits light substantially equal to the theoretical value, contributing to the formation of a high-brightness, high-definition full-color image.
  • the amount of light emitted by a conventional electroluminescent element that does not have the electroluminescent layer configuration described in this disclosure i.e., a conventional tandem-structure electroluminescent element in which two host-guest electroluminescent layers that emit light of the same color are stacked to the same thickness, may not reach twice the amount of light emitted by an electroluminescent element having a single electroluminescent layer (i.e., the theoretical value).
  • Layer configuration cathode layer/second stack (electron injection layer/electron transport layer/hole blocking layer/second blue electroluminescent layer (thickness: 15 nm)/hole transport layer/hole injection layer)/charge generation layer/first stack (electron transport layer/hole blocking layer/first blue electroluminescent layer (thickness: 15 nm)/electron blocking layer/hole transport layer/hole injection layer)/anode layer.
  • Thickness ratio the ratio of the second electroluminescent layer thickness (15 nm) to the second stack thickness (70 nm) is 0.21, and the ratio of the first electroluminescent layer thickness (15 nm) to the first stack thickness (165 nm) is 0.091.
  • the current efficiency of the single prototype was 206 cd/A/y.
  • the current efficiency of the comparative tandem prototype was (condition i) 305 cd/A/y (current efficiency 1.48 times that of the single prototype), (condition ii) 320 cd/A/y (same 1.55 times), and (condition iii) 219 cd/A/y (same 1.1 times).
  • the element life of the comparative tandem prototype was 2.01 times that of the single prototype (condition i), 2.12 times that of the single prototype (condition ii), and 1.92 times that of the single prototype (condition iii).
  • the driving voltage of the comparative tandem prototype was 1.9 times that of the single prototype (condition i), 1.9 times that of the single prototype (condition ii), and 2.0 times that of the single prototype (condition iii).
  • electroluminescent devices with a tandem structure having two conventional electroluminescent layers of the same thickness have a smaller increase in current efficiency compared to the increase in driving voltage compared to electroluminescent devices with a single structure, and even if the conditions of the carrier functional layer are changed, it can be seen that the luminous efficiency does not reach twice that of electroluminescent devices with a single structure by a large margin, even though the driving voltage is about twice as high.
  • the mobility of holes is generally higher than that of electrons, but depending on the material selection of the electron transport layer and the hole transport layer, the mobility of electrons may be higher than that of holes.
  • the mobility of electrons may be higher than that of holes in terms of the injection of carriers (electrons and holes) from the electrode layer, depending on the combination of the cathode layer material and the electron injection layer material, and the combination of the anode layer material and the hole injection layer material.
  • the generation of excitons that contribute to light emission is due to the recombination of electrons and holes supplied to the electroluminescent layer, but the carrier that is the rate-limiting factor for the generation of excitons changes whether it is electrons or holes depending on the material selection.
  • the amount of carriers supplied to the electroluminescent layer is matched, that is, carrier balance is achieved by optimizing the material selection of these carrier functional layers other than the electroluminescent layer or the thickness of the carrier functional layer.
  • an electroluminescent element having multiple electroluminescent layers there is usually a charge generation layer and multiple adjacent electroluminescent layers interposed therebetween in the stacking direction.
  • the balance of electrons and holes generated by the charge generation layer may not be 1:1. Therefore, the carriers that become rate-limiting and the degree of rate-limiting may differ for carrier injection from the charge generation layer depending on the combination of an electron injection layer and an electron transport layer for an n-type charge generation layer, or the combination of a hole injection layer and a hole transport layer for a p-type charge generation layer.
  • the present inventors have found that in an electroluminescent device having a tandem structure, in addition to matching the supply amounts of electrons and holes in each of the multiple electroluminescent layers, i.e., the carrier balance, it is necessary to consider the carrier balance and carrier supply amount between each electroluminescent layer, which did not need to be considered in an electroluminescent device having a single electroluminescent layer, and that in a conventional electroluminescent device having multiple electroluminescent layers (tandem structure), excess carriers (electrons or holes) generated in one of the electroluminescent layers can be a cause of the current efficiency of the electroluminescent device not being doubled.
  • an electroluminescent device having a tandem structure substantially twice that of an electroluminescent device having a single electroluminescent layer, it has been found that it can be an effective measure to not only balance the supply of electrons and holes to one electroluminescent layer, but also to balance the carriers in each of the multiple electroluminescent layers and between them.
  • the inventors have introduced a new design concept to an electroluminescent device having a tandem structure with multiple electroluminescent layers, in which the configuration (thickness) of each electroluminescent layer itself is changed as in the present disclosure, thereby achieving carrier balance between the multiple electroluminescent layers and solving the problem of imbalance in carrier supply.
  • the present disclosure makes it possible to generate an appropriate amount and balance of excitons in each electroluminescent layer in the stacking direction without generating excess carriers as in conventional electroluminescent devices with a tandem structure.
  • the present disclosure realizes an electroluminescent device with a tandem structure that can reduce current consumption and driving voltage and improve luminous efficiency.
  • the amount of excitons generated in the electroluminescent layer formed on the cathode side layer is small. More specifically, examples of such cases include cases where the amount of electron injection from the cathode layer is smaller than the amount of hole injection from the anode layer, and/or cases where the amount of hole injection from the p-type charge generation layer is smaller than the amount of electron injection from the n-type charge generation layer.
  • examples of the above cases include cases where the difference between the electron injection from the cathode layer and the hole injection from the p-type charge generation layer is larger than the difference between the hole injection from the anode layer and the electron injection from the n-type charge generation layer, that is, cases where the difference between the electron injection amount and the hole injection amount in the electroluminescent layer formed on the cathode side is larger than the difference between the electron injection amount and the hole injection amount in the electroluminescent layer formed on the anode side. Therefore, the thickness of the electroluminescent layer formed on the cathode layer side is made thinner.
  • the electroluminescent layer on the cathode layer side is formed so that the ratio of the thickness of the electroluminescent layer on the cathode layer side to the thickness of the electroluminescent layer on the anode layer side in the stacking direction is greater than 4/15 and less than 2/3. More preferably, the ratio of the thickness of the electroluminescent layer on the cathode layer side to the thickness of the electroluminescent layer on the anode layer side is greater than 1/3 and less than 1/2.
  • the amount of excitons generated in the electroluminescent layer formed on the anode layer side is small. More specifically, examples of such cases include cases where the amount of electron injection from the cathode layer is greater than the amount of hole injection from the anode layer, and/or cases where the amount of hole injection from the p-type charge generation layer is greater than the amount of electron injection from the n-type charge generation layer.
  • examples of the above cases include cases where the difference between the hole injection from the anode layer and the electron injection from the n-type charge generation layer is greater than the difference between the electron injection from the cathode layer and the hole injection from the p-type charge generation layer, that is, cases where the difference between the electron injection amount and the hole injection amount in the electroluminescent layer formed on the anode side is greater than the difference between the electron injection amount and the hole injection amount in the electroluminescent layer formed on the cathode side. Therefore, the thickness of the electroluminescent layer formed on the anode layer side is made thinner.
  • the electroluminescent layer on the anode layer side is formed so that the ratio of the thickness of the electroluminescent layer on the anode layer side to the thickness of the electroluminescent layer on the cathode layer side in the stacking direction is greater than 4/15 and less than 2/3. More preferably, the ratio of the thickness of the electroluminescent layer on the anode layer side to the thickness of the electroluminescent layer on the cathode layer side is greater than 1/3 and less than 1/2.
  • the electroluminescent element has a top-emission configuration in which light is extracted from the cathode layer side
  • even the slightest defect in the sealing layer formed on the cathode layer can cause the cathode layer to deteriorate due to the intrusion of oxygen or moisture, reducing the electron injection properties, and as a result, the amount of electrons supplied to the electroluminescent layer directly below the cathode layer can be reduced.
  • the thickness of the electroluminescent layer on the anode layer side may be formed to be a specific ratio to the thickness of the electroluminescent layer on the cathode layer side thinner than the theoretical thickness.
  • the thickness of the electroluminescent layer formed on the cathode layer side is made thinner than that of the electroluminescent layer formed on the anode layer side.
  • carriers (electrons and holes) corresponding to the thickness of the electroluminescent layer are supplied to the electroluminescent layer on the cathode layer side. Therefore, excitons are generated without the generation of excess carriers, and the amount of excitons generated in the electroluminescent layer on the anode side is substantially the same as the theoretical value.
  • each electroluminescent layer overlapping in the stacking direction emits light with a brightness according to its thickness. Furthermore, since the generation of excess carriers can be prevented in each electroluminescent layer overlapping in the stacking direction, a reduction in current consumption is realized, and therefore a reduction in power consumption can also be realized.
  • the thickness of the electroluminescent layer on the cathode layer side is 17 nm for the red and green electroluminescent elements and 7 nm for the blue electroluminescent element, and that the thickness of the electroluminescent layer on the anode layer side is 35 nm for the red and green electroluminescent elements and 15 nm for the blue electroluminescent element.
  • the electroluminescent device of the example has the layer structure of this embodiment.
  • the ratio of the thickness of the cathode-side electroluminescent layer to the thickness of the anode-side electroluminescent layer is 0.49 for the red and green electroluminescent layers, and 0.47 for the blue electroluminescent layer.
  • the thickness of each stack of each color is 67 nm to 255 nm, in the range of 60 nm to 260 nm, and the ratio of the thickness of the electroluminescent layer to the thickness of the stack in each stack is in the range of 0.10 to 0.13.
  • Each layer of the electroluminescent device of the comparative example has the same thickness as each layer of the stack on the anode layer side described above, and is a full-color electroluminescent device in which each color has a single electroluminescent layer (not a tandem structure).
  • the current efficiency (also called “luminous efficiency”) of the full-color electroluminescent device of the above example was 1.6 times that of the full-color electroluminescent device of the above comparative example, the element life was 2.6 times, and the driving voltage was 1.6 times. From these results, it can be seen that the electroluminescent element of the above example achieves an improvement in luminous efficiency commensurate with the increase in driving voltage. Therefore, it can be seen that the electroluminescent device having the tandem structure disclosed herein can suppress an increase in driving voltage and extend the element life, as well as achieve an improvement in luminous efficiency commensurate with the increase in driving voltage, compared to a full-color electroluminescent device having a conventional tandem structure.
  • the full-color electroluminescent device having two electroluminescent layers (tandem structure) in the stacking direction can achieve characteristics more than twice those of a single-layer full-color electroluminescent device.
  • the electroluminescent device of this embodiment can achieve a significant improvement in characteristics.
  • the electroluminescent device of this embodiment also has the effect of reducing the amount of guest compound (dopant) used compared to conventional electroluminescent devices having a tandem structure with multiple electroluminescent layers of the same thickness.
  • FIG. 6 is a diagram for explaining the light emission mechanism of the electroluminescent element 10A of the electroluminescent device 13A according to the second embodiment of the present disclosure.
  • the electroluminescent device 13A according to the second embodiment is different from the electroluminescent device 13 described above in that it includes the electroluminescent element 10A having three electroluminescent layers in the stacking direction.
  • FIG. 6 only the essential configuration of the electroluminescent element 10A included in the electroluminescent device 13A is shown.
  • the same explanation as in the above-described embodiment will not be repeated, and the same reference numerals will be used for components having the same functions as those described in the above-described embodiment, and the explanation will not be repeated.
  • a third electroluminescent layer 71R and a second charge generation layer 80R are further disposed between the cathode layer 22R and the second electroluminescent layer 53R.
  • the set of layers 50R including the second electroluminescent layer 53R, which is disposed between the first charge generation layer 40R and the second charge generation layer 80R in the stacking direction is the second stack.
  • the set of layers 70R including the third electroluminescent layer 71R, which is disposed between the second charge generation layer 80R and the cathode layer 22R is the third stack.
  • a third electroluminescent layer 71G and a second charge generation layer 80G are further disposed between the cathode layer 22G and the second electroluminescent layer 53G.
  • the set of layers 50G including the second electroluminescent layer 53G, which is disposed between the first charge generation layer 40G and the second charge generation layer 80G in the stacking direction is the second stack.
  • the set of layers 70G including the third electroluminescent layer 71G, which is disposed between the second charge generation layer 80G and the cathode layer 22G is the third stack.
  • a third electroluminescent layer 71B and a second charge generation layer 80B are further disposed between the cathode layer 22B and the second electroluminescent layer 53B.
  • the set of layers 50B including the second electroluminescent layer 53B, which is disposed between the first charge generation layer 40B and the second charge generation layer 80B in the stacking direction is the second stack.
  • the set of layers 70B including the third electroluminescent layer 71B, which is disposed between the second charge generation layer 80B and the cathode layer 22B is the third stack.
  • the layers 30R, 30G and 30B, 50R, 50G and 50B, and 70R, 70G and 70B included in the electroluminescent elements 10R, 10G and 10B of each color have carrier function layers (electron injection layer, electron transport layer, hole transport layer, hole injection layer, etc.) arranged therein.
  • the third electroluminescent layers 71R, 71G, and 71B included in the electroluminescent elements 10R, 10G and 10 of each color are collectively referred to as the "third electroluminescent layer 71.”
  • the thickness of the first electroluminescent layer 34 is 1, for example, the thickness of the second electroluminescent layer 53 is 0.5, and the thickness of the third electroluminescent layer 71 is 0.3.
  • the ratio of the thickness of the electroluminescent layer on the cathode side to the electroluminescent layer on the anode side is greater than 4/15 and less than 2/3.
  • the thickness of each stack of each color is in the range of 60 nm to 260 nm, and the ratio of the thickness of the electroluminescent layer to the thickness of the stack in each stack is in the range of 0.05 to 0.35.
  • the thicknesses of the electroluminescent layers 34, 53, and 71 included in the electroluminescent element 10A are thicker on the anode layer 21 side and thinner on the cathode layer 22 side.
  • the cathode layer 22 may be a common electrode layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.
  • the sealing layer 14 may be a common layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.
  • FIG. 7 is a diagram showing a layer structure of a display device 200 according to a third embodiment of the present disclosure.
  • Fig. 8 is a diagram for explaining the light emission mechanism of the electroluminescent element of the electroluminescent device 13B shown in Fig. 7.
  • the electroluminescent device 13B included in the display device 200 according to this embodiment is different from the display device 100 described above in that it includes an electroluminescent device 13B including an electroluminescent element 210 in which the thickness of the second electroluminescent layer 253 on the cathode layer 22 side is made thicker and the first electroluminescent layer 234 on the anode layer 21 side is made thinner.
  • Figs. 7 and 8 show only the main configuration of the electroluminescent element 210 included in the electroluminescent device 13B.
  • the electroluminescent device 13B laminated on the display device 200 includes an electroluminescent element 210.
  • the electroluminescent element 210 is an organic EL element having a tandem structure in which two electroluminescent layers, a first electroluminescent layer 234 and a second electroluminescent layer 253, are formed between the anode layer 21 and the cathode layer 22.
  • the electroluminescent element 210 includes a red electroluminescent element 210R, a green electroluminescent element 210G, and a blue electroluminescent element 210B.
  • the first electroluminescent layer 234 includes a first electroluminescent layer 234R, a first electroluminescent layer 234G, and a first electroluminescent layer 234B.
  • the second electroluminescent layer 253 includes a second electroluminescent layer 253R, a second electroluminescent layer 253G, and a second electroluminescent layer 253B.
  • a first charge generation layer 40 is disposed between the first electroluminescent layer 234 and the second electroluminescent layer 253.
  • This first charge generation layer 40 has a two-layer structure in which an n-type first charge generation layer and a p-type first charge generation layer are laminated.
  • the n-type first charge generation layer is configured by doping an oxadiazole compound, which is an organic electron transport material, with BUPH1, which is an organic electron supply material.
  • BUPH1 organic electron supply material
  • a first electroluminescent layer 234 and a second electroluminescent layer 253 that emit light of the same color are laminated for each of the red electroluminescent element 210R, the green electroluminescent element 210G, and the blue electroluminescent element 210B.
  • the red electroluminescent element 210R the anode layer 21R, the first electroluminescent layer 234R, the first charge generation layer 40R, the second electroluminescent layer 253R, and the cathode layer 22R are arranged in this order.
  • the set of layers 230R including the first electroluminescent layer 234R, which is arranged between the anode layer 21R and the first charge generation layer 40R in the stacking direction is the first stack
  • the set of layers 250R including the second electroluminescent layer 253R which is arranged between the first charge generation layer 40R and the cathode layer 22R, is the second stack.
  • the anode layer 21G, the first electroluminescent layer 234G, the first charge generation layer 40G, the second electroluminescent layer 253G, and the cathode layer 22G are arranged in this order.
  • the first stack in the green electroluminescent element 210G is a set of layers 230G including the first electroluminescent layer 234G, which is arranged between the anode layer 21G and the first charge generation layer 40G in the stacking direction.
  • the second stack in the green electroluminescent element 210G is a set of layers 250G including the second electroluminescent layer 253G, which is arranged between the first charge generation layer 40G and the cathode layer 22G.
  • the blue electroluminescent element 210B the anode layer 21B, the first electroluminescent layer 234B, the first charge generation layer 40B, the second electroluminescent layer 253B, and the cathode layer 22B are stacked in this order.
  • the first stack in the blue electroluminescent element 210B is a set of layers 230B including the first electroluminescent layer 234B, which is disposed between the anode layer 21B and the first charge generation layer 40B in the stacking direction.
  • the second stack in the blue electroluminescent element 210B is a set of layers 250B including the second electroluminescent layer 253B, which is disposed between the first charge generation layer 40B and the cathode layer 22B.
  • the layer assemblies 230R, 230G, 230B, 250R, 250G, and 250B included in the electroluminescent elements 210R, 210G, and 210B of the respective colors have carrier functional layers (electron injection layer, electron transport layer, hole transport layer, hole injection layer, etc.) arranged therein.
  • the ratio of the thickness of the first electroluminescent layer 234 to the thickness of the second electroluminescent layer 253 is greater than 4/15 and less than 2/3.
  • the thickness of each stack of each color is in the range of 50 nm to 350 nm, and the ratio of the thickness of the electroluminescent layer to the thickness of the stack in each stack is in the range of 0.05 to 0.35.
  • the thickness of the electroluminescent layer on the cathode layer side was 35 nm for the red and green electroluminescent elements and 15 nm for the blue electroluminescent element, and the thickness of the electroluminescent layer on the anode layer side was 18 nm for the red and green electroluminescent elements and 8 nm for the blue electroluminescent element.
  • the ratio of the thickness of the anode side electroluminescent layer to the thickness of the cathode side electroluminescent layer was 0.34 for the red and green electroluminescent layers, and 0.33 for the blue electroluminescent layer.
  • the thickness of each stack of each color was in the range of 100 nm to 240 nm, and the ratio of the thickness of the electroluminescent layer to the thickness of the stack in each stack was in the range of 0.05 to 0.11.
  • the comparative example in this embodiment was an electroluminescent device having a single electroluminescent layer of each color that satisfied the above-mentioned conditions for the thickness on the anode layer side.
  • the current efficiency (luminous efficiency) in the above example of this embodiment was 1.6 times that of the comparative example of this embodiment, the luminous lifetime was 2.6 times, and the driving voltage was 1.6 times.
  • the mobility of holes is higher than that of electrons.
  • the mobility of electrons is about two orders of magnitude higher than that of holes, so when this is used in the electron transport layer or electroluminescent layer of the carrier functional layer, the movement of electrons may not be the rate-limiting factor. As a result, the movement of holes may become the rate-limiting factor, and in the generation of excitons in the electroluminescent layer on the anode layer side, holes may be insufficient and electrons may be insufficient and electrons may be insufficient.
  • the carrier injection from the charge generation layer is generally inferior to the hole injection, so the supply amount of carriers (here, electrons) supplied to the electroluminescent layer on the anode layer side may be reduced. As a result, the generation amount of excitons in the electroluminescent layer on the anode layer side may be reduced.
  • each electroluminescent layer overlapping in the stacking direction emits light with a brightness according to its thickness. Furthermore, since the generation of surplus carriers (electrons or holes) can be prevented, a reduction in current consumption is realized, and therefore a reduction in power consumption can also be realized.
  • the second electroluminescent layer 253 on the cathode layer 22 side is thicker and the first electroluminescent layer 234 on the anode layer 21 side is thinner, so that the electroluminescent layer may have three or more layers in the stacking direction.
  • Such an embodiment can be illustrated by a diagram in which the electroluminescent layer in FIG. 6 is modified to have a thickness that gradually decreases from the anode layer side to the cathode layer side in the stacking direction. This embodiment has the same effect as the third embodiment, just as the second embodiment has the same effect as the first embodiment.
  • Emodiment 5 This embodiment is the same as the above-described embodiment 2, except that only the thicknesses of two electroluminescent layers adjacent to each other in the stacking direction among the three electroluminescent layers in the above-described embodiment 2 have the above-described specific ratio.
  • Such an embodiment can be illustrated, for example, by a diagram in which the thicknesses of electroluminescent layer 34 and electroluminescent layer 53 in FIG. 6 are the same, and the thickness of electroluminescent layer 71 is changed to be thinner than that of electroluminescent layer 53.
  • this embodiment is suitable for adjusting the carrier balance in the remaining stack when a good carrier balance cannot be obtained in the remaining stack as a result of adjusting the carrier balance in two adjacent stacks among the three stacks by a method other than the control of the thickness of the electroluminescent layer in this disclosure.
  • Examples of the configuration of such an electroluminescent device include a configuration in which the thicknesses of corresponding carrier functional layers in the first stack and the second stack are different, a configuration in which the materials of corresponding carrier functional layers in the first stack and the second stack are different, and a configuration in which the material of the first electroluminescent layer contained in the first stack and the material of the second electroluminescent layer contained in the second stack are different, and in which the ratio of the thickness of the electroluminescent layer between the second stack and the third stack is the ratio of the thickness of the electroluminescent layer described in this disclosure.
  • Emodiment 6 This embodiment is similar to the above-described embodiment 4, except that only the thicknesses of two electroluminescent layers adjacent to each other in the stacking direction among the three electroluminescent layers in the above-described embodiment 4 have the above-described specific ratio.
  • Such an embodiment can be illustrated, for example, by a diagram modified so that the thicknesses of electroluminescent layer 34 and electroluminescent layer 53 in FIG. 6 are the same, and the thickness of electroluminescent layer 71 is made thicker than that of electroluminescent layer 53.
  • this embodiment is suitable for adjusting the carrier balance in one remaining stack when, as a result of adjusting the carrier balance in two adjacent stacks out of three stacks by a method other than controlling the thickness of the electroluminescent layer in this disclosure, a good carrier balance cannot be obtained in the remaining stack.
  • An example of the configuration of such an electroluminescent device is the same as in embodiment 5. This embodiment achieves the same effect as embodiment 3 in the two electroluminescent layers adjacent in the stacking direction in embodiment 4.
  • a plurality of electroluminescent layers are formed by overlapping in the stacking direction for each luminescent color, and in at least one pair of two electroluminescent layers adjacent in the stacking direction, the ratio of the thickness of the electroluminescent layer on one side in the stacking direction to the thickness of the electroluminescent layer on the other side in the stacking direction is greater than 4/15 and smaller than 2/3.
  • the thickness of the electroluminescent layer is made thicker on the anode layer side and thinner on the cathode layer side.
  • the electroluminescent device of the present disclosure achieves higher brightness emission, lower voltage operation, and lower power consumption compared to electroluminescent devices having a conventional tandem structure in which the thickness of each electroluminescent layer is the same in the stacking direction. Therefore, according to the present disclosure, in an electroluminescent device capable of full-color display without using color filters or the like, it is possible to achieve high brightness and/or low power emission, which are advantages of a tandem structure.
  • the electroluminescent layer As the electroluminescent layer, high luminous efficiency and improved device life can be achieved, and according to the present disclosure, the carrier balance (balance between electrons and holes) in each electroluminescent layer can be further improved. This is advantageous from the viewpoint of being able to fully utilize the performance of each host-guest electroluminescent layer, which has high luminous efficiency and excellent life. It is also advantageous from the viewpoint of being able to reduce the amount of expensive and rare phosphorescent dopant used as the guest compound.
  • the electroluminescent layer includes a fluorescent electroluminescent layer containing a fluorescent dopant and a phosphorescent electroluminescent layer containing a phosphorescent dopant
  • the number of fluorescent electroluminescent layers in the stacking direction may be greater than the number of phosphorescent electroluminescent layers, for example, by 1 or 2. This configuration is even more effective in terms of optimizing both the balance of the lifetime and the balance of the amount of light emitted between the fluorescent electroluminescent layer and the phosphorescent electroluminescent layer.
  • the multiple electroluminescent layers stacked in the stacking direction only the same color, it is advantageous in terms of improving color purity in an electroluminescent device that enables full-color display by painting each RGB color separately. Furthermore, when the same material that emits the same color is stacked in each electroluminescent layer, it becomes easier to evaluate the carrier injection property and carrier transport property between each electroluminescent layer by simulation. In this way, the above configuration is even more effective in terms of more easily realizing an electroluminescent device capable of full-color display including electroluminescent elements having desired characteristics.
  • the number of electroluminescent layers in the stacking direction may be 2 or more and 5 or less. This configuration is even more effective in terms of improving the luminous efficiency, extending the life span, and reducing the driving voltage.
  • the thickness of the carrier functional layer is optimized, and the risk of a shortage of carriers supplied to the electroluminescent layer can be further reduced. This is therefore even more effective in terms of achieving light emission with theoretical brightness.
  • the electroluminescent device of the present disclosure may also be a top-emission type. This configuration is even more effective in terms of optimizing the thickness of the carrier functional layer.
  • the display device of the present disclosure also includes the electroluminescent device described above.
  • the ratio of the thickness of the electroluminescent layer on one side of the stacking direction to the thickness of the electroluminescent layer on the other side of the stacking direction is advantageous in that the generation of excess carriers is prevented in each electroluminescent layer in the stacking direction, allowing the injected current to contribute to light emission more efficiently.
  • high-brightness, low-power light emission is achieved in the display device, and the advantages of adopting a tandem structure in the electroluminescent device can be fully realized.
  • forming at least the electroluminescent layer by a vapor deposition method is advantageous in realizing an electroluminescent device capable of full color display, since it is possible to form a host-guest electroluminescent layer and to paint a highly precise luminescent layer, compared to forming an electroluminescent layer by other manufacturing methods.
  • electroluminescent layers of different thicknesses in the stacking direction may be formed by changing only the deposition time.
  • electroluminescent layers of different thicknesses can be formed in the same manufacturing equipment by applying the same conditions except for the deposition time, which is even more effective in terms of reducing manufacturing costs and improving productivity.
  • the thickness of the electroluminescent layers that emit light of the same color in the stacking direction is usually constant.
  • technologies that have a thicker electroluminescent layer on the cathode layer side and a thinner electroluminescent layer on the anode layer side JP Patent Publication No. 2007-329054, WO 2010/113493, etc.
  • technologies that have a thicker electroluminescent layer on the anode layer side and a thinner electroluminescent layer on the cathode layer side JP Patent Publication No. 2015-153587, JP Patent Publication No. 2015-32582, etc.
  • the reason for making the thicknesses of the electroluminescent layers different in the stacking direction is not made clear, and the above publications do not disclose the realization of full-color display by painting each of the RGB colors separately.
  • the electroluminescent device and display device of the present disclosure are expected to contribute to the achievement of, for example, Goal 9.4 of the Sustainable Development Goals (SDGs) proposed by the United Nations, which states, "Improve sustainability by improving infrastructure and industry through increased resource efficiency and the expanded introduction of clean technologies and environmentally friendly technologies and industrial processes.”
  • SDGs Sustainable Development Goals

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Abstract

According to the present invention, an electroluminescent device (13) comprises: a first color electroluminescent layer to an n-th color electroluminescent layer (n≧2), which emit different colors, in a direction intersecting the stacking direction; and a first electroluminescent layer (34) and a second electroluminescent layer (53) positioned on the positive electrode-side and the negative electrode-side, respectively, of a charge generation layer (40) in the stacking direction. The ratio of the thickness of the second electroluminescent layer (53) to the thickness of the first electroluminescent layer (34) adjacent thereto in the stacking direction via the charge generation layer (40) is greater than 4/15 and less than 2/3.

Description

電界発光装置、その製造方法及び表示装置Electroluminescent device, its manufacturing method and display device

 本開示は、電界発光装置、その製造方法及び表示装置に関する。 This disclosure relates to an electroluminescent device, a manufacturing method thereof, and a display device.

 有機EL素子(あるいは「Organic Light Emitting Diode」、「OLED」ともいう)を搭載したディスプレイの量産は、スマートフォン、又はTVのハイエンドモデル用薄型ディスプレイから本格的に始まっている。有機EL素子のディスプレイは、今や液晶ディスプレイに代わる薄型ディスプレイとして中心的な存在になったと言えるほど普及している。 Mass production of displays incorporating organic light-emitting diodes (also known as "Organic Light Emitting Diodes" or "OLEDs") has begun in earnest with thin displays for high-end smartphones and TVs. Displays using organic light-emitting diodes have become so widespread that they can be said to have become a central replacement for LCD displays as thin displays.

 アルミキノリノール錯体(Alq)を電子輸送層兼電界発光層に使用した薄膜積層型の有機EL素子が知られている。しかし、有機EL素子における発光効率のさらなる向上のため、下記(1)~(3)の順に開発が進められている。
 (1)有機EL素子の電界発光層、キャリア(電子、正孔)輸送層、あるいはキャリア(電子、正孔)注入層の材料として、ホスト化合物にドーパントであるゲスト化合物を添加したホスト・ゲスト系の材料を使用する。
 (2)電界発光層用のゲスト化合物(ドーパント)として、蛍光発光材料、もしくは蛍光発光材料と燐光発光材料を使用する。
 (3)熱活性遅延蛍光(TADF)材料又はハイパーフローレッセンス材料等の改良されたゲスト化合物を電界発光層のドーパントに使用する。
Thin-film laminate-type organic EL elements using an aluminum quinolinol complex ( Alq3 ) in the electron transport layer and electroluminescent layer are known. However, in order to further improve the luminous efficiency of organic EL elements, development is being carried out in the following order of (1) to (3).
(1) A host-guest material in which a guest compound as a dopant is added to a host compound is used as a material for the electroluminescent layer, carrier (electron, hole) transport layer, or carrier (electron, hole) injection layer of an organic EL element.
(2) A fluorescent material, or a fluorescent material and a phosphorescent material, are used as a guest compound (dopant) for the electroluminescent layer.
(3) Improved guest compounds such as thermally activated delayed fluorescent (TADF) materials or hyperfluorescent materials are used as dopants in the electroluminescent layer.

 また、有機EL素子における電流効率及び素子寿命の改善の観点から、下記(4)及び(5)がさらに検討されている。
 (4)キャリア輸送層又はキャリア注入層の工夫によってキャリアバランスを改善する。
 (5)発光素子の素子構造にタンデム構造を採用する(例えば、特許文献1~3参照)。
From the viewpoint of improving the current efficiency and life span of an organic EL element, the following (4) and (5) have been further investigated.
(4) The carrier balance is improved by modifying the carrier transport layer or the carrier injection layer.
(5) A tandem structure is adopted for the element structure of the light-emitting element (see, for example, Patent Documents 1 to 3).

日本国特開2015-32582号公報Japanese Patent Application Publication No. 2015-32582 日本国特開2007-329054号公報Japanese Patent Application Publication No. 2007-329054 国際公開第2010/113493号International Publication No. 2010/113493

 しかしながら、フルカラー表示が可能なようにRGB各色の発光層を塗分けて、かつタンデム構造を採用したときに、タンデム構造を採用することの長所が十分に発現されないことがある。 However, when the RGB light-emitting layers are painted separately to enable full-color display and a tandem structure is used, the advantages of using a tandem structure may not be fully realized.

 本開示の一態様は、フルカラー表示が可能な電界発光装置においてタンデム構造を採用することによる長所を十分に発現可能な技術を提供することを目的とする。 One aspect of the present disclosure aims to provide a technology that can fully realize the advantages of adopting a tandem structure in an electroluminescent device capable of full-color display.

 本開示の一態様に係る電界発光装置は、陽極層と、積層方向において前記陽極層に対向する陰極層と、前記積層方向における前記陽極層と前記陰極層との間、及び前記積層方向に交差する方向、のそれぞれにおいて複数配置されている電界発光層と、前記積層方向において隣り合う二つの前記電界発光層間に配置される電荷生成層と、を有し、前記電界発光層は、前記積層方向には、同じ色に発光する電界発光層が複数配置されており、前記積層方向に交差する方向には、互いに異なる色に発光する第1色の電界発光層から第n色の電界発光層(n≧2の整数)が配置されており、かつ、前記積層方向において前記電荷生成層を介して隣り合う二つの前記電界発光層の組の少なくとも一組において、前記積層方向の一方側の前記電界発光層の厚みに対する前記積層方向の他方側の前記電界発光層の厚みの比率が4/15より大きく2/3より小さい。 An electroluminescent device according to one embodiment of the present disclosure includes an anode layer, a cathode layer facing the anode layer in a stacking direction, a plurality of electroluminescent layers disposed between the anode layer and the cathode layer in the stacking direction and in a direction intersecting the stacking direction, and a charge generation layer disposed between two adjacent electroluminescent layers in the stacking direction, and the electroluminescent layers have a plurality of electroluminescent layers emitting the same color disposed in the stacking direction, and electroluminescent layers of a first color to an n-th color (n is an integer greater than or equal to 2) emitting different colors disposed in a direction intersecting the stacking direction, and in at least one pair of the two electroluminescent layers adjacent to each other in the stacking direction via the charge generation layer, the ratio of the thickness of the electroluminescent layer on one side of the stacking direction to the thickness of the electroluminescent layer on the other side of the stacking direction is greater than 4/15 and less than 2/3.

 また、本開示の一態様に係る表示装置は、上記の電界発光装置を備えている。 In addition, a display device according to one aspect of the present disclosure includes the electroluminescent device described above.

 また、本開示の一態様に係る電界発光装置の製造方法は、上記の電界発光装置を製造する方法であって、前記陽極層又は前記陰極層上に前記電界発光層と前記電荷生成層とを前記積層方向において交互に形成する工程を含み、前記電界発光層を蒸着法によって形成する。 In addition, a method for manufacturing an electroluminescent device according to one embodiment of the present disclosure is a method for manufacturing the above-mentioned electroluminescent device, and includes a step of forming the electroluminescent layer and the charge generation layer alternately in the stacking direction on the anode layer or the cathode layer, and forming the electroluminescent layer by a vapor deposition method.

 本開示の一態様によれば、フルカラー表示が可能な電界発光装置においてタンデム構造を採用することによる長所を十分に発現させることが可能となる。 According to one aspect of the present disclosure, it is possible to fully realize the advantages of adopting a tandem structure in an electroluminescent device capable of full-color display.

本開示の実施形態1に係る表示装置の構成を模式的に示す平面図である。1 is a plan view illustrating a schematic configuration of a display device according to a first embodiment of the present disclosure. 図1の表示装置の層構成を模式的に示す図である。FIG. 2 is a diagram illustrating a layer structure of the display device of FIG. 1. 図2に示す層構成における電界発光素子の層構成を模式的に示す図である。FIG. 3 is a diagram showing a schematic layer structure of the electroluminescent element having the layer structure shown in FIG. 2 . 図3に示す電界発光素子の製造方法の一例を示すフローチャートである。4 is a flowchart showing an example of a method for manufacturing the electroluminescence device shown in FIG. 3 . 図2に示す電界発光装置の電界発光素子の発光メカニズムを説明するための図である。3 is a diagram for explaining the light emitting mechanism of an electroluminescent element of the electroluminescent device shown in FIG. 2 . 本開示の実施形態2に係る電界発光装置の電界発光素子の発光メカニズムを説明するための図である。6 is a diagram for explaining the light emission mechanism of an electroluminescent element of an electroluminescent device according to a second embodiment of the present disclosure. FIG. 本開示の実施形態3に係る表示装置の層構成を模式的に示す図である。FIG. 11 is a diagram illustrating a layer configuration of a display device according to a third embodiment of the present disclosure. 図7に示す電界発光装置の電界発光素子の発光メカニズムを説明するための図である。8 is a diagram for explaining the light emitting mechanism of an electroluminescent element of the electroluminescent device shown in FIG. 7 .

 〔電界発光素子〕
 本開示の実施の形態に係る電界発光素子は、陽極層と、陰極層と、電界発光層と、電荷生成層と、を有する。本開示の電界発光素子は、積層方向に重なる複数の電界発光層を有する。また、前記電荷生成層を介して隣り合う二つの前記電界発光層の組の少なくとも一組において、一方の電界発光層の厚みが他方の電界発光層の厚みに対して特定の比率となる。本開示の電界発光素子は、これらの条件の層を備える範囲において、発光素子の公知の素子構成を採用してよい。以下、本開示の電界発光素子の層構成を、主にOLEDを例に説明する。なお、本開示において、「電界発光素子」は、積層方向における電界発光層及び各種キャリア機能層の配列の群を意味する。また、本開示において「電界発光装置」は、積層方向に交差する方向における複数の電界発光素子の群を意味する。
[Electroluminescent Device]
The electroluminescent element according to the embodiment of the present disclosure has an anode layer, a cathode layer, an electroluminescent layer, and a charge generation layer. The electroluminescent element according to the present disclosure has a plurality of electroluminescent layers overlapping in the stacking direction. In addition, in at least one pair of the two electroluminescent layers adjacent to each other via the charge generation layer, the thickness of one electroluminescent layer has a specific ratio to the thickness of the other electroluminescent layer. The electroluminescent element according to the present disclosure may adopt a known element configuration of a light-emitting element within the range in which the layers satisfy these conditions are provided. Hereinafter, the layer configuration of the electroluminescent element according to the present disclosure will be described mainly using an OLED as an example. In addition, in the present disclosure, the term "electroluminescent element" refers to a group of electroluminescent layers and various carrier functional layers arranged in the stacking direction. In addition, in the present disclosure, the term "electroluminescent device" refers to a group of a plurality of electroluminescent elements in a direction intersecting the stacking direction.

 [陽極層]
 陽極層は、陽極及び陰極の一対の電極層の内の一方の電極層であり、本開示では電界発光素子を構成する各層に正孔を供給するための電極層である。陽極層は、導電性を有している。さらに、陽極層は、例えば可視光の一部を反射し、残りを透過する光学特性を有している。典型的には、陽極層は、可視光を反射する電極材料と、可視光を透過する電極材料との両方を含む。
[Anode layer]
The anode layer is one of a pair of electrode layers, an anode and a cathode, and is an electrode layer for supplying holes to each layer constituting the electroluminescent device in the present disclosure. The anode layer has electrical conductivity. Furthermore, the anode layer has optical properties, for example, of reflecting a part of visible light and transmitting the rest. Typically, the anode layer includes both an electrode material that reflects visible light and an electrode material that transmits visible light.

 陽極層の材料には、正孔注入性を高める観点から、仕事関数が比較的大きい材料(例えば仕事関数が4.5eV以上の材料)が好適に使用される。仕事関数が大きな電極材料の例には、Pt(5.65eV)、Ir(5.25eV)、Ni(5.2eV)、Au及びPd(5.15eV)、ならびにindium tin oxide(In-Sn-O)等が含まれる。 In order to enhance hole injection properties, it is preferable to use a material with a relatively large work function (e.g., a material with a work function of 4.5 eV or more) as the material for the anode layer. Examples of electrode materials with large work functions include Pt (5.65 eV), Ir (5.25 eV), Ni (5.2 eV), Au and Pd (5.15 eV), as well as indium tin oxide (In-Sn-O).

 可視光を反射する電極材料の例には、Al、Mg、Li、Ag、Pd、及びCu等の金属材料、ならびに、これらの金属材料の合金(例えばAPC(Ag-Pd-Cu)合金等)が含まれる。 Examples of electrode materials that reflect visible light include metal materials such as Al, Mg, Li, Ag, Pd, and Cu, as well as alloys of these metal materials (e.g., APC (Ag-Pd-Cu) alloy, etc.).

 可視光を透過する電極材料の例には、透明金属酸化物(例えば、indium tin oxide(In-Sn-O)、indium zinc oxide(In-Zn-O)及びindium gallium zinc oxide(In-Ga-Zn-O)等)の薄膜、Al、Mg、及びAg等の金属材料からなる薄膜、ならびに当該金属材料からなるナノワイヤ(Nano Wire、NW)が含まれる。 Examples of electrode materials that transmit visible light include thin films of transparent metal oxides (e.g., indium tin oxide (In-Sn-O), indium zinc oxide (In-Zn-O), and indium gallium zinc oxide (In-Ga-Zn-O)), thin films made of metallic materials such as Al, Mg, and Ag, and nanowires (NW) made of such metallic materials.

 透明金属酸化物の中でも、In-Sn-Oは仕事関数が4.6~5.0eVと比較的高く、陽極層の材料として好適に用いられる。さらに、陽極層には、電極層としての導電性の向上又は可視光を反射する機能の追加を目的に、In-Sn-Oを金属材料の表面に形成した積層体(例えばIn-Sn-O/Ag)が用いられ得る。 Among transparent metal oxides, In-Sn-O has a relatively high work function of 4.6 to 5.0 eV, making it suitable for use as a material for the anode layer. Furthermore, for the anode layer, a laminate (e.g., In-Sn-O/Ag) in which In-Sn-O is formed on the surface of a metal material can be used to improve the electrical conductivity of the electrode layer or to add the function of reflecting visible light.

 [陰極層]
 陰極層は、陽極及び陰極の一対の電極層の内の他方の電極層であり、本開示では電界発光素子を構成する各層に電子を供給するための電極層である。陰極層は、積層方向において陽極層に対向して配置されている。陰極層は、例えば導電性と可視光の透過性とを有している。
[Cathode layer]
The cathode layer is the other of a pair of electrode layers, an anode and a cathode, and is an electrode layer for supplying electrons to each layer constituting the electroluminescent device in the present disclosure. The cathode layer is disposed opposite the anode layer in the stacking direction. The cathode layer has, for example, electrical conductivity and visible light transparency.

 陰極層の材料には、例えば電子注入性を高める観点から、仕事関数が比較的小さい材料が好適に用いられる。陰極層を構成する電極材料の例には、アルカリ金属、アルカリ土類金属あるいはAl等の金属材料、それらを含む合金、及びナノワイヤ(例えばAgのナノワイヤ等)が含まれる。合金の例には、MgとAgとの合金、及び、Liを少量ドーピングしたAl等が含まれる。 As the material for the cathode layer, a material with a relatively small work function is preferably used, for example, from the viewpoint of enhancing electron injection properties. Examples of electrode materials constituting the cathode layer include metal materials such as alkali metals, alkaline earth metals, and Al, alloys containing these, and nanowires (e.g., Ag nanowires, etc.). Examples of alloys include alloys of Mg and Ag, and Al doped with a small amount of Li.

 [電界発光層]
 電界発光層は、電界の印加によって所定の色の光を発光する層である。電界発光層は、通常、発光材料で構成されるが、即時発光する層と遅延発光する層と、のように、公知の電界発光層における電界発光のための二以上の機能のそれぞれに応じた機能層が二層以上重なっており、かつ全体で電界発光の機能を発現する複数の機能層の積層構造であってもよい。本開示において、電界発光層は、積層方向における陽極層及び陰極層との間、及び積層方向に交差する方向、のそれぞれにおいて複数配置されている。
[Electroluminescent Layer]
The electroluminescent layer is a layer that emits light of a predetermined color when an electric field is applied. The electroluminescent layer is usually composed of a light-emitting material, but may be a laminated structure of a plurality of functional layers that exhibit the function of electroluminescence as a whole, in which two or more functional layers corresponding to two or more functions for electroluminescence in a known electroluminescent layer are overlapped, such as a layer that emits immediate light and a layer that emits delayed light. In the present disclosure, the electroluminescent layer is arranged in a plurality of layers between the anode layer and the cathode layer in the stacking direction and in the direction crossing the stacking direction.

 電界発光層は、積層方向には、同じ色に発光する電界発光層が複数配置されている。積層方向に重なる同色に発光する電界発光層の数は、限定されないが、発光効率を高める観点及び素子寿命を延ばす観点から、2以上であることが好ましく、3以上であることがより好ましい。一方で、積層方向に重なる同色に発光する電界発光層の数は、駆動電圧の上昇を抑制する観点、駆動電圧に応じた駆動ドライバの耐圧を実現する観点、及び電界発光素子のフレキシビリティを維持する(電界発光素子のトータルの厚みの増加を抑制する)観点から、5以下であることが好ましく、4以下であることがより好ましい。 The electroluminescent layer has multiple electroluminescent layers emitting the same color arranged in the stacking direction. The number of electroluminescent layers emitting the same color overlapping in the stacking direction is not limited, but from the viewpoints of increasing the luminous efficiency and extending the element life, it is preferably 2 or more, and more preferably 3 or more. On the other hand, the number of electroluminescent layers emitting the same color overlapping in the stacking direction is preferably 5 or less, and more preferably 4 or less, from the viewpoints of suppressing an increase in the driving voltage, achieving a voltage resistance of the driving driver according to the driving voltage, and maintaining the flexibility of the electroluminescent element (suppressing an increase in the total thickness of the electroluminescent element).

 ここで、同じ色とは、二以上の発光ピーク波長が存在する場合に、全ての発光ピーク波長が互いに±5nmの範囲内にあり、全ての発光ピーク波長における半値全幅の内の最大値が残りの発光ピーク波長の半値全幅の内の最小値の1.25倍以下になる光の色同士のことを指す。基本的には、電界発光層を構成するホスト材料とゲスト化合物の両方が、同一の材料又は同一の骨格を有する類似の材料の場合、同じ色に発光する。ただし、後述するトップエミッション構造では、各色のマイクロキャビティ構造の違いにより、各色の発光ピーク波長が変動する場合がある。したがって、トップエミッション構造では、同じ色とは、全ての発光ピーク波長が±10nmの範囲内にあり、かつ半値全幅の上記の範囲を満たす光の色同士を指す。 Here, the same color refers to light colors in which, when there are two or more emission peak wavelengths, all emission peak wavelengths are within a range of ±5 nm from each other, and the maximum of the full width at half maximum of all emission peak wavelengths is 1.25 times or less the minimum of the full width at half maximum of the remaining emission peak wavelengths. Basically, when both the host material and guest compound constituting the electroluminescent layer are the same material or similar materials having the same skeleton, they emit the same color. However, in the top emission structure described below, the emission peak wavelength of each color may vary due to differences in the microcavity structure of each color. Therefore, in the top emission structure, the same color refers to light colors in which all emission peak wavelengths are within a range of ±10 nm, and the full width at half maximum satisfies the above range.

 また、電界発光層は、積層方向に交差する方向には、互いに異なる色に発光する第1色の電界発光層から第n色の電界発光層(n≧2の整数)が配置されている。ここで、異なる色とは、上述した同じ色に含まれない範囲の光の色同士のことを指す。代表的な公知例は、フルカラー表示のための複数色の電界発光層として、赤色発光層、緑色発光層及び青色発光層の三色の発光層が知られている。このように、積層方向に交差する方向に複数色の電界発光層を配置することを「塗分ける」と言うことがある。なお、積層方向における各色の電界発光層の数は、全ての発光色において同一であることが好ましい。以下、主に上記三色の発光層を例として本開示における電界発光層を説明するが、本開示はこれに限定されない。なお、当該交差する方向における、互いに異なる色の電界発光層は、積層方向において互いに同じ位置(高さ)にあってもよいし、異なる位置(高さ)にあっても(ずれていても)よい。 In addition, the electroluminescent layer is arranged in a direction intersecting the stacking direction, with electroluminescent layers of a first color to an n-th color (n is an integer greater than or equal to 2) emitting different colors. Here, different colors refer to colors of light that are not included in the same color as described above. A typical known example is a three-color luminescent layer of a red luminescent layer, a green luminescent layer, and a blue luminescent layer, as a multi-color electroluminescent layer for full-color display. In this way, arranging electroluminescent layers of multiple colors in a direction intersecting the stacking direction is sometimes called "color separation." Note that the number of electroluminescent layers of each color in the stacking direction is preferably the same for all luminescent colors. Below, the electroluminescent layer in this disclosure will be described mainly using the above three-color luminescent layers as an example, but the present disclosure is not limited to this. Note that the electroluminescent layers of different colors in the intersecting direction may be at the same position (height) in the stacking direction or at different positions (heights) (shifted).

 すなわち本開示において、電界発光装置が赤、緑及び青の三色の電界発光層を含む場合には、積層方向に交差する方向、例えば積層方向に直交する方向には、各色の電界発光素子が独立して配置されている。また、積層方向には、赤色電界発光層には赤色電界発光層が重なり合い、緑色電界発光層には緑色電界発光層が重なり合い、青色電界発光層には青色電界発光層が重なり合って配置される。なお、積層方向に異なる色の電界発光層がさらに積層されていてもよいが、色純度向上の観点から、積層方向には同じ色に発光する電界発光層のみが複数配置されていることが好ましい。積層方向において同じ色の電界発光層のみが積層されていることは、後述する電界発光層の厚みをより簡便に決定する観点からも有利である。 In other words, in the present disclosure, when an electroluminescent device includes three electroluminescent layers of red, green, and blue, electroluminescent elements of each color are independently arranged in a direction intersecting the stacking direction, for example, a direction perpendicular to the stacking direction. In addition, in the stacking direction, red electroluminescent layers are overlapped with red electroluminescent layers, green electroluminescent layers are overlapped with green electroluminescent layers, and blue electroluminescent layers are overlapped with blue electroluminescent layers. Although electroluminescent layers of different colors may be further stacked in the stacking direction, from the viewpoint of improving color purity, it is preferable that only electroluminescent layers that emit the same color are arranged in the stacking direction. Stacking only electroluminescent layers of the same color in the stacking direction is advantageous from the viewpoint of more easily determining the thickness of the electroluminescent layer described later.

 積層方向において三層以上の電界発光層が配置される電界発光素子において、各電界発光層間に電荷生成層を介在させる場合に、電荷生成層に対して積層方向の一方側の電界発光層におけるキャリア(電子及び/又は正孔)の供給を最適化すると、他方側の電界発光層では電子及び/又は正孔の供給が律速、すなわち不足することがある。その結果、複数の電界発光層間でキャリアバランスの不均衡が生じる場合がある。本開示においては、キャリア(電子及び/又は正孔)供給が律速されている電界発光層の厚みを、積層方向における隣の電界発光層の厚みに対して適宜に変更することにより、積層方向における全ての電界発光層のキャリアバランスを適性化する。 In an electroluminescent element in which three or more electroluminescent layers are arranged in the stacking direction, when a charge generation layer is interposed between each of the electroluminescent layers, optimizing the supply of carriers (electrons and/or holes) in the electroluminescent layer on one side of the stacking direction relative to the charge generation layer may cause the supply of electrons and/or holes to be rate-limiting, i.e., insufficient, in the electroluminescent layer on the other side. As a result, an imbalance in the carrier balance may occur between the multiple electroluminescent layers. In the present disclosure, the thickness of the electroluminescent layer in which the supply of carriers (electrons and/or holes) is rate-limiting is appropriately changed relative to the thickness of the adjacent electroluminescent layer in the stacking direction, thereby optimizing the carrier balance of all electroluminescent layers in the stacking direction.

 すなわち、本開示の電界発光装置では、積層方向において電荷生成層を介して隣り合う二つの電界発光層の組の少なくとも一組において、積層方向の一方側の電界発光層の厚みに対する積層方向の他方側の電界発光層の厚みの比率が4/15大きく2/3より小さい。すなわち、本開示において、特定の電界発光層の厚みが、陽極層側におけるその隣の、又は陰極層側におけるその隣の電界発光層の厚みに対して上記比率で薄くなっている。なお、電界発光層における「隣り合う」とは、電界発光素子に含まれる各電界発光層同士の配置関係において、積層方向にて隣りにある位置関係であることを意味している。即ち、積層方向において隣り合う電界発光層間には、他の層が介在していてもよい。 In other words, in the electroluminescent device of the present disclosure, in at least one pair of two electroluminescent layers adjacent to each other in the stacking direction via a charge generation layer, the ratio of the thickness of the electroluminescent layer on one side in the stacking direction to the thickness of the electroluminescent layer on the other side in the stacking direction is greater than 4/15 and smaller than 2/3. In other words, in the present disclosure, the thickness of a specific electroluminescent layer is thinner than the thickness of the electroluminescent layer adjacent to it on the anode layer side or the electroluminescent layer adjacent to it on the cathode layer side by the above ratio. Note that "adjacent" in electroluminescent layers means that the electroluminescent layers included in the electroluminescent element are adjacent to each other in the stacking direction in terms of their positional relationship. In other words, another layer may be interposed between the electroluminescent layers adjacent to each other in the stacking direction.

 また、本開示の電界発光装置は、積層方向において、陽極層側から陰極層側に向けて電界発光層の厚みが特定の比率で漸次薄くなる、又は陰極層側から陽極層側に向けて電界発光層の厚みは、特定の比率で漸次薄くなる電界発光層を備えた構成としてもよい。 The electroluminescent device of the present disclosure may also be configured to include an electroluminescent layer in which the thickness of the electroluminescent layer gradually decreases at a specific ratio from the anode layer side to the cathode layer side in the stacking direction, or the thickness of the electroluminescent layer gradually decreases at a specific ratio from the cathode layer side to the anode layer side.

 積層方向において隣り合う電界発光層の内、どちら側(陰極層側又は陽極層側)の電界発光層の厚みを上記比率で減じるかは、律速となるキャリアの種類と、そのキャリアが律速となる電界発光層の箇所とに応じて決めることができる。例えば、陰極層から供給(注入及び/又は移動)される電子、及び、電荷生成層から供給される正孔のいずれか又は両方が律速となる場合では、積層方向において陰極層側の電界発光層の厚みをより薄くすればよい。また、例えば、陽極層から供給される正孔、及び、電荷生成層から供給される電子のいずれか又は両方が律速になる場合では、積層方向において陽極層側の電界発光層の厚みをより薄くすればよい。さらに、例えば、積層方向において三層以上の電界発光層が配置される場合では、電界発光層間に生じるキャリアバランスの不均衡の大小関係に応じて、即ちキャリアバランスの不均衡が大きい電界発光層の厚みをより薄くすればよい。 Which side (cathode layer side or anode layer side) of adjacent electroluminescent layers in the stacking direction should have its thickness reduced by the above ratio can be determined according to the type of carrier that is rate-limiting and the location of the electroluminescent layer where the carrier is rate-limiting. For example, when either or both of the electrons supplied (injected and/or moved) from the cathode layer and the holes supplied from the charge generation layer are rate-limiting, the thickness of the electroluminescent layer on the cathode layer side in the stacking direction can be made thinner. Also, when either or both of the holes supplied from the anode layer and the electrons supplied from the charge generation layer are rate-limiting, the thickness of the electroluminescent layer on the anode layer side in the stacking direction can be made thinner. Furthermore, for example, when three or more electroluminescent layers are arranged in the stacking direction, the thickness of the electroluminescent layer with the larger carrier balance imbalance can be made thinner depending on the magnitude of the carrier balance imbalance between the electroluminescent layers, that is, the thickness of the electroluminescent layer with the larger carrier balance imbalance can be made thinner.

 このような構成とすることにより、本開示の電界発光装置では、積層方向におけるそれぞれの電界発光層におけるキャリアバランスが適正化される。積層方向におけるそれぞれの電界発光層の厚みは、本開示の技術的思想に沿う限り、電界発光素子における各層の材料の組み合わせ、及び、電界発光層の厚みを変える目的、等の種々の要因によって適宜に決めることが可能である。 By adopting such a configuration, in the electroluminescent device of the present disclosure, the carrier balance in each electroluminescent layer in the stacking direction is optimized. The thickness of each electroluminescent layer in the stacking direction can be appropriately determined depending on various factors, such as the combination of materials of each layer in the electroluminescent element and the purpose of changing the thickness of the electroluminescent layer, as long as it is in accordance with the technical concept of the present disclosure.

 なお、積層方向の一方側の電界発光層の厚みに対する積層方向の他方側の電界発光層の厚みの比率は、小さすぎるとキャリアバランスの補正の効果が小さく、余剰キャリアが生じてしまう。したがって、発光に寄与しない電流が発生して、消費電力が増えてしまうことがある。一方、当該比率が大きすぎると、電界発光層において後述する励起子(エキシトン)を生成するキャリア(電子又は正孔)の一方が明らかに足りなくなり、電界発光層の所期の発光特性(励起子生成能力)の発現が不十分となることがある。上記比率は、余剰キャリアの発生を抑制する観点から4/15より大きいことが好ましく、電界発光層の発光特性を十分に発現させる観点から2/3よりも小さいことが好ましい。上記の比率は、上記の観点に加えて、積層方向におけるそれぞれの電界発光層の厚みの変更をより容易にする観点から、1/3以上であることがより好ましく、1/2以下であることがより好ましい。 If the ratio of the thickness of the electroluminescent layer on one side of the stacking direction to the thickness of the electroluminescent layer on the other side of the stacking direction is too small, the effect of correcting the carrier balance is small, and excess carriers are generated. Therefore, a current that does not contribute to light emission is generated, and power consumption may increase. On the other hand, if the ratio is too large, one of the carriers (electrons or holes) that generate excitons (excitons) in the electroluminescent layer described later may be clearly insufficient, and the expected light-emitting characteristics (exciton generation ability) of the electroluminescent layer may not be fully expressed. The above ratio is preferably greater than 4/15 from the viewpoint of suppressing the generation of excess carriers, and is preferably smaller than 2/3 from the viewpoint of fully expressing the light-emitting characteristics of the electroluminescent layer. In addition to the above viewpoint, the above ratio is more preferably 1/3 or more, and more preferably 1/2 or less, from the viewpoint of making it easier to change the thickness of each electroluminescent layer in the stacking direction.

 積層方向に配置される複数の電界発光層の内、上記特定の比率となる二つの電界発光層を一組配置することにより、各電界発光層における発光に寄与しない無駄な厚み分を削減することができる。よって、駆動電圧の低減及び使用する材料の削減を実現することができる。また、本開示の電界発光装置では、積層方向において複数の電界発光層を備えた電界発光素子に注入される電流をより無駄なく、発光に寄与させることができる。そのため、本開示の電界発光装置は、同一の厚みの電界発光層を複数備えた従来のタンデム構造の電界発光装置に比べて、発光効率をより向上させることができる。 By arranging a set of two electroluminescent layers with the above-mentioned specific ratio among the multiple electroluminescent layers arranged in the stacking direction, it is possible to reduce the unnecessary thickness that does not contribute to light emission in each electroluminescent layer. This makes it possible to reduce the driving voltage and the amount of material used. Furthermore, in the electroluminescent device of the present disclosure, the current injected into the electroluminescent element having multiple electroluminescent layers in the stacking direction can be made to contribute to light emission with less waste. Therefore, the electroluminescent device of the present disclosure can further improve the light emission efficiency compared to a conventional electroluminescent device with a tandem structure having multiple electroluminescent layers of the same thickness.

 なお、それぞれの電界発光層の厚みは、本開示の効果が得られる範囲において、積層方向に交差する方向における複数色の電界発光層を有する電界発光装置の一色の電界発光層のみの厚みを上記の比率で変化させてもよいし、任意の二色以上の厚みを上記の比率で一律に、あるいは独立して変化させてもよい。また、積層方向におけるそれぞれの電界発光層の厚みの比率は、各発光色で一定であってもよいし、上記の範囲内の異なる比率であってもよい。 In addition, the thickness of each electroluminescent layer may be changed by the above ratio for only one color of an electroluminescent layer in an electroluminescent device having electroluminescent layers of multiple colors in a direction intersecting the stacking direction, or the thickness of any two or more colors may be changed uniformly or independently by the above ratio, within the range where the effects of the present disclosure can be obtained. Furthermore, the thickness ratio of each electroluminescent layer in the stacking direction may be constant for each luminescent color, or may be a different ratio within the above range.

 また、積層方向において電界発光素子に含まれる電界発光層の厚みを変化させる方向は、本開示の効果が得られる範囲において発光色ごとに決定してもよい。例えば、一部の発光色の電界発光層の厚みは、一方側から他方側へ減少するように設定し、他の一部の発光色の電界発光層の厚みは、他方側から一方側へ減少するように設定してもよい。 Furthermore, the direction in which the thickness of the electroluminescent layer included in the electroluminescent element is changed in the stacking direction may be determined for each luminescent color within the range in which the effects of the present disclosure can be obtained. For example, the thickness of the electroluminescent layer of some luminescent colors may be set to decrease from one side to the other side, and the thickness of the electroluminescent layer of some other luminescent colors may be set to decrease from the other side to one side.

 積層方向における電界発光層の厚みを変化させる向き及び個々の厚みは、例えば電界発光素子における各層の材料の組み合わせ等に応じて決まる。積層方向におけるそれぞれの電界発光層の厚さは、電界発光素子中の各層間のキャリアの注入性及び/又はキャリアの輸送性のシミュレーションによる評価と、それに基づく実証実験とにより、目的に応じた厚みとして決定することが可能である。このとき、積層方向に積層する複数の電界発光層を同色のみと設定することによって、積層方向において異なる電界発光層間のキャリア注入性及びキャリア輸送性のパラメータを同一とすることができる。そのため、シミュレーションがより容易になり、より簡便にそれぞれの電界発光層の厚みを決定することが可能となる。 The direction in which the thickness of the electroluminescent layer in the stacking direction is changed and the individual thicknesses are determined, for example, according to the combination of materials of each layer in the electroluminescent device. The thickness of each electroluminescent layer in the stacking direction can be determined as a thickness according to the purpose by evaluating the carrier injection property and/or carrier transport property between each layer in the electroluminescent device by simulation and conducting a demonstration experiment based on the evaluation. In this case, by setting the multiple electroluminescent layers stacked in the stacking direction to be only the same color, the parameters of the carrier injection property and carrier transport property between different electroluminescent layers in the stacking direction can be made the same. This makes the simulation easier and makes it possible to determine the thickness of each electroluminescent layer more simply.

 本開示における好ましい電界発光層には、ホスト化合物とゲスト化合物とを含むホスト・ゲスト系の電界発光層が挙げられる。ホスト・ゲスト系の電界発光層は、ホスト化合物である固体媒質中に、例えば、ゲスト化合物として蛍光ドーパント等を微量(例えば0.1~数mol%程度)含有する。このようにゲスト化合物がドーピングされた電界発光層では、ホスト化合物の蛍光性が完全に消失し、代わりにドーピングしたゲスト化合物の蛍光スペクトルに一致する強い発光が得られる。これは、ホスト化合物の励起エネルギーがゲスト化合物に移動するためである。この励起エネルギーの移動によって、ホスト・ゲスト系の電界発光層では、量子効率がより高いゲスト化合物からの発光が得られる。 A preferred electroluminescent layer in the present disclosure is a host-guest electroluminescent layer that contains a host compound and a guest compound. A host-guest electroluminescent layer contains a small amount (e.g., about 0.1 to several mol%) of a fluorescent dopant or the like as a guest compound in a solid medium that is a host compound. In an electroluminescent layer doped with a guest compound in this way, the fluorescence of the host compound is completely lost, and instead, strong light emission that matches the fluorescence spectrum of the doped guest compound is obtained. This is because the excitation energy of the host compound is transferred to the guest compound. Due to this transfer of excitation energy, in a host-guest electroluminescent layer, light emission from a guest compound with higher quantum efficiency is obtained.

 さらに、電界発光層において、蛍光ドーパントをゲスト化合物としてドーピングすることによって電界発光素子の素子寿命も飛躍的に向上する。これは、ゲスト化合物であるドーパントが、ホスト化合物の固体媒質中でキャリア(電子又は正孔)のトラップとして機能してキャリアの再結合中心となり、当該固体媒質において直接励起子(エキシトン)を作り出すためである。この作り出された励起子が基底状態に緩和する過程を失活過程と呼ぶ。失活過程には無放射過程(熱失活)と放射過程(発光)とがあり、このうち放射過程により発光を生じる現象が電界発光である。ゲスト化合物がキャリアのトラップとして機能することにより、電界発光層の量子効率の向上だけでなく、キャリアの再結合確率の向上に起因する素子寿命の向上が果たされる。その結果として、電界発光層の発光効率と電界発光素子の素子寿命の向上とが実現される。 Furthermore, by doping the electroluminescent layer with a fluorescent dopant as a guest compound, the device life of the electroluminescent element is also improved dramatically. This is because the dopant, which is a guest compound, functions as a trap for carriers (electrons or holes) in the solid medium of the host compound, becoming a carrier recombination center and directly creating excitons in the solid medium. The process in which the created excitons relax to the ground state is called the deactivation process. The deactivation process includes a non-radiative process (thermal deactivation) and a radiative process (luminescence), and electroluminescence is the phenomenon in which luminescence occurs through the radiative process. By the guest compound functioning as a carrier trap, not only is the quantum efficiency of the electroluminescent layer improved, but the device life is also improved due to the increased probability of carrier recombination. As a result, the luminous efficiency of the electroluminescent layer and the device life of the electroluminescent element are improved.

 このようにホスト・ゲスト系の電界発光層ではキャリアの有効利用が実現できるため、本開示の電界発光装置によれば、電界発光層の高い発光効率と電界発光素子の素子寿命との向上を実現することができる。 In this way, the host-guest electroluminescent layer can effectively utilize carriers, and therefore the electroluminescent device disclosed herein can achieve high luminous efficiency of the electroluminescent layer and improved device life of the electroluminescent element.

 なお、キャリアの再結合時に生成される励起子には一重項励起子と三重項励起子がある。ゲスト化合物として蛍光ドーパントを用いた場合には、一重項励起子が発光に寄与する。ここで、蛍光ドーパントの代わりに燐光ドーパントを使用した場合には、三重項励起子が発光に寄与する。一重項励起子と三重項励起子との生成割合は、スピン統計則により、一重項励起子が25%、三重項励起子が75%である。したがって、ゲスト化合物として蛍光ドーパントを用いた場合、すなわち、一重項励起子のみから放射される「蛍光」の発光過程では、発光に寄与できる励起子生成確率は最大でも25%にとどまる。 The excitons generated during carrier recombination are classified into singlet excitons and triplet excitons. When a fluorescent dopant is used as the guest compound, singlet excitons contribute to light emission. When a phosphorescent dopant is used instead of a fluorescent dopant, triplet excitons contribute to light emission. According to the law of spin statistics, the generation ratio of singlet excitons and triplet excitons is 25% for singlet excitons and 75% for triplet excitons. Therefore, when a fluorescent dopant is used as the guest compound, that is, in the process of light emission of "fluorescence" emitted only from singlet excitons, the probability of generating excitons that can contribute to light emission is at most 25%.

 これに対して、ゲスト化合物として燐光ドーパントを使用した場合では、三重項励起子から光を取り出すことができるので、量子効率を蛍光ドーパントの3倍に高めることができる。さらに、一重項励起子から三重項励起子へのスピンの反転である項間交差を利用することで、理論上生成されたすべての励起子が三重項励起子から「燐光」を放射できる。したがって、ゲスト化合物として燐光ドーパントを使用した場合では、蛍光ドーパントを使用した場合に比べて、量子効率を、最大4倍にまで高めることができる。 In contrast, when a phosphorescent dopant is used as the guest compound, light can be extracted from triplet excitons, increasing the quantum efficiency three times that of a fluorescent dopant. Furthermore, by utilizing intersystem crossing, which is the inversion of the spin from singlet excitons to triplet excitons, theoretically all generated excitons can emit "phosphorescence" from triplet excitons. Therefore, when a phosphorescent dopant is used as the guest compound, quantum efficiency can be increased up to four times compared to when a fluorescent dopant is used.

 電界発光層の発光材料には公知の材料を用いることができる。例えば、青色電界発光層を構成する発光材料の例には、蛍光ドーパントであるピレン系化合物及びアントラセン系化合物が含まれる。また、赤色電界発光層、及び緑色電界発光層を構成する発光材料の例には、燐光ドーパントであるイリジウム錯体及びパラジウム系錯体が含まれる。  Known materials can be used as the light-emitting material for the electroluminescent layer. For example, examples of light-emitting materials constituting the blue electroluminescent layer include pyrene-based compounds and anthracene-based compounds, which are fluorescent dopants. Furthermore, examples of light-emitting materials constituting the red electroluminescent layer and the green electroluminescent layer include iridium complexes and palladium complexes, which are phosphorescent dopants.

 なお、燐光ドーパントとして使用されているイリジウム又はパラジウム等の白金系元素を含む錯体は、白金族元素の産出量が微少かつ産出地が偏在していることも相まって、微量でも非常に高価であり、安定供給に難がある場合もある。そのため、これらの白金系錯体を用いた燐光ドーパントの使用量の削減は、コストダウンの観点及び経済安全保障の観点から極めて重要である。 In addition, complexes containing platinum group elements such as iridium or palladium that are used as phosphorescent dopants are very expensive even in small amounts, due to the fact that platinum group elements are produced in small quantities and are unevenly distributed, and it can be difficult to obtain a stable supply. Therefore, reducing the use of phosphorescent dopants that use these platinum group complexes is extremely important from the perspective of cost reduction and economic security.

 このように、ホスト・ゲスト系の電界発光層は、ホスト化合物にゲスト化合物をドーピングすることによって形成され得る。ホスト・ゲスト系の電界発光層は、蒸着源を複数使用する共蒸着法で形成することができる。 In this way, a host-guest electroluminescent layer can be formed by doping a host compound with a guest compound. A host-guest electroluminescent layer can be formed by a co-evaporation method using multiple evaporation sources.

 ホスト・ゲスト系の電界発光層の材料には、公知の種々の例を採用することが可能である。ホスト化合物の例には、公知の各色の発光層材料が含まれる。ゲスト化合物の例には、前述の蛍光ドーパント、及び、燐光ドーパントの他、TADF及びハイパーフローレッセンス材料が含まれる。蛍光ドーパントの更なる例としては、ペリレン(Perylene)、DPT、Coumarin6、PMDFB、キナクリドン、ルブレン(Rubrene)、BTX、ABTX、DCM、及びDCJTが含まれる。燐光ドーパントの更なる例としては、Ir(ppy)、Ir(thpy)、Ir(t5m-thpy)、Ir(t-5CF-py)、Ir(t-5t-py)、Ir(mt-5mt-py)、Ir(btpy)、Ir(tflpy)、Ir(piq)、Ir(tiq)、Ir(fliq)、FIrpic、FIr6、ppy、tpy、bzq、thp、op、bo、bt、bon、αbsn、btp、ppo、C6、pq、β-bsn、及びppzが含まれる。 Various known examples of host-guest electroluminescent layer materials can be used. Examples of host compounds include known luminescent layer materials of each color. Examples of guest compounds include the above-mentioned fluorescent dopants and phosphorescent dopants, as well as TADF and hyperfluorescent materials. Further examples of fluorescent dopants include perylene, DPT, Coumarin 6, PMDFB, quinacridone, rubrene, BTX, ABTX, DCM, and DCJT. Further examples of phosphorescent dopants include Ir(ppy) 3 , Ir(thpy) 3 , Ir(t5m-thpy) 3 , Ir(t- 5CF3 -py) 3 , Ir(t-5t-py) 3 , Ir(mt-5mt-py) 3 , Ir(btpy) 3 , Ir(tflpy) 3 , Ir(piq) 3 , Ir(tiq) 3 , Ir(fliq) 3 , FIrpic, FIr6, ppy, tpy, bzq, thp, op, bo, bt, bon, α-bsn, btp, ppo, C6, pq, β-bsn, and ppz.

 なお、現在主流の電界発光素子では、青色に発光する電界発光層にはゲスト化合物に蛍光ドーパントが使用され、赤色及び緑色に発光する電界発光層にはゲスト化合物に燐光ドーパントが使用されている。これらの電界発光素子を含む電界発光装置では、理論上及び実際のいずれも、蛍光ドーパントの量子効率は、燐光ドーパントのそれよりも低い。そのため、上記の電界発光装置では、青色電界発光層に通電する電流量を、赤色及び緑色電界発光層に通電する電流量よりも多くすることによって発光量のバランスを取ることがある。 In addition, in the currently mainstream electroluminescent elements, a fluorescent dopant is used as the guest compound in the electroluminescent layer that emits blue light, and a phosphorescent dopant is used as the guest compound in the electroluminescent layers that emit red and green light. In electroluminescent devices that include these electroluminescent elements, the quantum efficiency of the fluorescent dopant is lower than that of the phosphorescent dopant, both theoretically and in practice. Therefore, in the above electroluminescent devices, the amount of light emitted may be balanced by making the amount of current passed through the blue electroluminescent layer greater than the amount of current passed through the red and green electroluminescent layers.

 しかし、このようにゲスト化合物として蛍光ドーパントを使用した蛍光電界発光層である青色電界発光層に流す電流量だけを多くすると、必然的に青色電界発光層の寿命が短く(劣化速度が速く)なってしまう。この対策のために、積層方向における青色電界発光層の総積層数を、ゲスト化合物が燐光ドーパントである燐光電界発光層である赤色及び緑色電界発光層の総積層数よりも多くしてもよい。すなわち、蛍光電界発光層の総積層数を、燐光電界発光層の総積層数よりも多くしてもよい。このような構成は、電界発光素子における蛍光電界発光層と燐光電界発光層との間で、電界発光層の寿命のバランスと、発光量のバランスとを取るのに有利である。蛍光電界発光層の総積層数は、燐光電界層の総積層数よりも1又は2多いことが好ましい。蛍光電界発光層の数を燐光電界発光層の数よりも3以上多くすると、色の異なる燐光電界発光層間での寿命のバランスと発光量のバランスとが取り難くなることがある。又は、電界発光装置の素子構造のバランスが悪くなるため、製造歩留まりが低くなることがある。 However, if the amount of current flowing through the blue electroluminescent layer, which is a fluorescent electroluminescent layer using a fluorescent dopant as a guest compound, is increased in this way, the life of the blue electroluminescent layer will inevitably be shortened (the rate of deterioration will be increased). To address this, the total number of stacked blue electroluminescent layers in the stacking direction may be made greater than the total number of stacked red and green electroluminescent layers, which are phosphorescent electroluminescent layers in which the guest compound is a phosphorescent dopant. In other words, the total number of stacked fluorescent electroluminescent layers may be made greater than the total number of stacked phosphorescent electroluminescent layers. This configuration is advantageous for balancing the life of the electroluminescent layer and the amount of light emitted between the fluorescent electroluminescent layer and the phosphorescent electroluminescent layer in the electroluminescent element. The total number of stacked fluorescent electroluminescent layers is preferably one or two more than the total number of stacked phosphorescent electroluminescent layers. If the number of fluorescent electroluminescent layers is three or more more than the number of phosphorescent electroluminescent layers, it may be difficult to balance the life and the amount of light emitted between the phosphorescent electroluminescent layers of different colors. Or, the balance of the element structure of the electroluminescent device may be poor, resulting in a low manufacturing yield.

 [電荷生成層]
 電荷生成層は、積層方向において隣り合う二つの電界発光層間に配置される。電荷生成層は、電子及び正孔の一方又は両方を生成する層である。電荷生成層で発生した電荷(チャージあるいはキャリア)は、積層方向における陽極層側及び陰極層側のそれぞれに位置する電界発光層に供給される。電荷生成層には、上記の機能を発現する公知の電荷生成材料を採用することが可能である。
[Charge Generation Layer]
The charge generation layer is disposed between two electroluminescent layers adjacent to each other in the stacking direction. The charge generation layer is a layer that generates one or both of electrons and holes. Charges (charges or carriers) generated in the charge generation layer are supplied to the electroluminescent layers located on the anode layer side and the cathode layer side in the stacking direction. The charge generation layer may be made of a known charge generation material that exhibits the above-mentioned functions.

 電荷生成層は、電子を生成する電子生成層と、正孔(ホール)を生成する正孔生成層とによって構成され得る。電子生成層の例にはn型電荷生成層が含まれ、正孔生成層の例にはp型電荷生成層が含まれる。陽極層から正孔が供給されるとともに陰極層から電子が供給されると、n型電荷生成層が電子を生成し、p型電荷生成層が正孔を生成する。 The charge generation layer may be composed of an electron generation layer that generates electrons and a hole generation layer that generates holes. An example of an electron generation layer is an n-type charge generation layer, and an example of a hole generation layer is a p-type charge generation layer. When holes are supplied from the anode layer and electrons are supplied from the cathode layer, the n-type charge generation layer generates electrons and the p-type charge generation layer generates holes.

 p型電荷生成層には、有機系の正孔輸送材料と、1~10%の範囲で添加される有機系の電子受容材料(正孔供給材料)とを含む材料を用いることが可能である。有機系の正孔輸送材料には、公知のトリアリールアミン系有機化合物を採用することが可能である。有機系の電子受容材料の例には、テトラシアノキノジメタンの四フッ化物(TCNQ-4F)が含まれる。p型電荷生成層の材料では、上述した正孔輸送材料、及び電子受容材料等を使用して、全て有機系材料を用いて十分な正孔生成能力を持つ材料が実現されている。 For the p-type charge generation layer, a material containing an organic hole transport material and an organic electron accepting material (hole supply material) added in the range of 1 to 10% can be used. For the organic hole transport material, a known triarylamine organic compound can be used. An example of an organic electron accepting material is tetracyanoquinodimethane tetrafluoride (TCNQ-4F). For the material of the p-type charge generation layer, a material with sufficient hole generation ability is realized using all organic materials, such as the hole transport material and electron accepting material described above.

 n型電荷生成層には、例えば、有機系の電子輸送材料と、5~20%の範囲で添加される無機の金属材料であり電子供給材料として作用するYb(イッテルビウム)もしくはLi(リチウム)とを含む材料を用いることが可能である。有機系の電子輸送材料の例には、オキサジアゾール系化合物が含まれる。n型電荷生成層でも、電子輸送層、電子供給材料共に有機系材料を使用するべく開発が進められている。例えば有機系の電子供給材料として、BUPH1、BPen、p-MeO-Phen、p-NMe-Phen、p-Pyrrd-Phen等の開発が進められている。 For the n-type charge generation layer, for example, a material containing an organic electron transport material and an inorganic metal material, Yb (ytterbium) or Li (lithium), which is added in the range of 5 to 20% and acts as an electron supply material, can be used. Examples of organic electron transport materials include oxadiazole compounds. Development is also underway to use organic materials for both the electron transport layer and the electron supply material in the n-type charge generation layer. For example, development is underway for organic electron supply materials such as BUPH1, BPen, p-MeO-Phen, p-NMe 2 -Phen, and p-Pyrrd-Phen.

 現状では、n型電荷生成層に利用できるような十分な電子供給性を有する有機系の電子供給材料は見出されておらず、そのため、全てが有機材料系で形成され、かつ、十分な特性を有するn型電荷生成層は見出されていない。本開示によれば、積層方向におけるそれぞれの電界発光層の厚みを前述のように設定することによって、電荷生成層から供給される電子及び/又は正孔と、各電極層から供給される正孔及び/又は電子とのバランス(キャリアバランス)を適正化することができる。そのため、本開示では、余剰キャリアの生成を抑え、消費電力に優れた複数の電界発光層を積層方向に有するタンデム構造の電界発光装置が実現される。 Currently, no organic electron supply material with sufficient electron supply properties has been found that can be used in an n-type charge generation layer, and therefore no n-type charge generation layer has been found that is formed entirely from organic materials and has sufficient characteristics. According to the present disclosure, by setting the thickness of each electroluminescent layer in the stacking direction as described above, it is possible to optimize the balance (carrier balance) between the electrons and/or holes supplied from the charge generation layer and the holes and/or electrons supplied from each electrode layer. Therefore, the present disclosure realizes an electroluminescent device with a tandem structure having multiple electroluminescent layers in the stacking direction that suppress the generation of excess carriers and have excellent power consumption.

 [その他の構成]
 本開示の電界発光素子は、本開示の効果が得られる範囲において、他の層をさらに有していてもよい。他の構成の例には、正孔注入層、電子注入層、正孔輸送層、電子ブロック層、正孔ブロック層及び電子輸送層等のキャリア機能層が含まれる。
[Other configurations]
The electroluminescent device of the present disclosure may further include other layers as long as the effects of the present disclosure can be obtained. Examples of other configurations include carrier functional layers such as a hole injection layer, an electron injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, and an electron transport layer.

 正孔注入層は、例えば陽極層に隣接して配置される。正孔注入層は、正孔輸送材料と電子受容材料とで構成され得る。これらの材料は、p型電荷生成層で説明した材料と同じ有機系の材料であり、電界発光素子における正孔注入層の具体的な材料は、p型電荷生成層のそれと同じであってもよいし、異なっていてもよい。 The hole injection layer is disposed, for example, adjacent to the anode layer. The hole injection layer may be composed of a hole transport material and an electron accepting material. These materials are the same organic materials as those described for the p-type charge generation layer, and the specific material of the hole injection layer in the electroluminescent device may be the same as that of the p-type charge generation layer, or may be different.

 電子注入層は、例えば陰極層に隣接して配置される。電子注入層は、電子輸送材料で構成され得る。電子注入層を構成する電子輸送材料の例には、無機材料であるフッ化リチウム(LiF)が含まれる。また、電子注入層は、n型電荷生成層と同様に、オキサジアゾール系化合物等の有機系の材料で電子輸送材料を形成し、それに金属材料(例えば、Li又はYb等)をドーピングする構成でもよい。 The electron injection layer is disposed adjacent to the cathode layer, for example. The electron injection layer may be made of an electron transport material. Examples of electron transport materials constituting the electron injection layer include lithium fluoride (LiF), which is an inorganic material. Similarly to the n-type charge generation layer, the electron injection layer may be configured by forming an electron transport material from an organic material such as an oxadiazole compound, and doping it with a metal material (e.g., Li or Yb).

 電子注入層に利用されるLiFは、優れた電子注入性を発揮する。その一方で、LiFに限らずYbのような無機材料を含むキャリア機能層の成膜は、当該無機材料の融点が高いために、一般的に有機系材料からなる電界発光層及びキャリア機能層の成膜よりも高温で実施される。そのため、先に成膜した有機系材料に熱的ダメージを与える恐れがある。したがって、可能であれば極力、有機系材料のみで電界発光素子を形成することが好ましい。 The LiF used in the electron injection layer exhibits excellent electron injection properties. On the other hand, the deposition of the carrier function layer, which contains inorganic materials such as Yb, not limited to LiF, is generally carried out at a higher temperature than the deposition of the electroluminescent layer and carrier function layer, which are made of organic materials, because the melting point of the inorganic material is high. This raises the risk of thermal damage to the organic material deposited earlier. Therefore, it is preferable to form the electroluminescent element using only organic materials, whenever possible.

 そこで、比較的低温で蒸着層を形成できるアルミニウム(Al)等で構成された陰極層と組み合わせることで十分な特性を有することができるとしてBUPH1、BPen、p-MeO-Phen、p-NMe-Phen及びp-Pyrrd-Phen等の有機系電子注入性材料の開発が進められている。しかしまだ、有機系材料を用いた電子注入層の電子注入能力は、上記LiF等の無機材料を用いた電子注入層よりも劣る。したがって、陰極層に隣接して有機系材料からなる電子注入層を配置した場合、陰極層側に形成される電界発光層に対する電子供給量が減ってしまうことがある。このような場合は、上記電子供給量低減の影響を低減すべく陰極層側の電界発光層の厚みを理論値よりも薄くすることによって、タンデム構造を採用したことによる長所を十分に発現させることができる。 Therefore, organic electron injection materials such as BUPH1, BPen, p-MeO-Phen, p-NMe 2 -Phen and p-Pyrrd-Phen have been developed as they can have sufficient characteristics when combined with a cathode layer made of aluminum (Al) or the like, which can form a vapor deposition layer at a relatively low temperature. However, the electron injection ability of an electron injection layer made of an organic material is still inferior to that of an electron injection layer made of an inorganic material such as LiF. Therefore, when an electron injection layer made of an organic material is disposed adjacent to a cathode layer, the amount of electrons supplied to the electroluminescent layer formed on the cathode layer side may decrease. In such a case, the thickness of the electroluminescent layer on the cathode layer side is made thinner than the theoretical value in order to reduce the effect of the reduction in the amount of electrons supplied, thereby allowing the advantages of adopting a tandem structure to be fully realized.

 正孔輸送層は、有機系の正孔輸送材料、例えば、トリアリールアミン系有機化合物で構成され得る。 The hole transport layer can be composed of an organic hole transport material, for example, a triarylamine organic compound.

 電子ブロック層も、正孔輸送層と同様に、有機系の正孔輸送材料で構成され得る。電子ブロック層の材料は、正孔輸送層のそれと同じであってもよいし、異なっていてもよい。 The electron blocking layer, like the hole transport layer, can be made of an organic hole transport material. The material of the electron blocking layer can be the same as or different from that of the hole transport layer.

 正孔ブロック層は、有機系の電子輸送材料、例えば、オキサジアゾール系化合物で構成され得る。正孔ブロック層の材料には、電子輸送材料に加えてリチウムキノリン(Liq)が含まれていてもよい。 The hole blocking layer may be composed of an organic electron transport material, such as an oxadiazole compound. The material of the hole blocking layer may contain lithium quinoline (Liq) in addition to the electron transport material.

 電子輸送層も、正孔ブロック層と同様に、前述した有機系の電子輸送材料で構成され得る。電子輸送層の材料は、正孔ブロック層のそれと同じであってもよいし、異なっていてもよい。  Like the hole blocking layer, the electron transport layer can be composed of the organic electron transport material described above. The material of the electron transport layer can be the same as or different from that of the hole blocking layer.

 正孔注入層及び電子注入層は、電極層に対応して配置されていればよく、通常、積層方向において各電極層に隣接して配置される。正孔輸送層、電子ブロック層、前述の電界発光層、正孔ブロック層、電子輸送層及び前述の電荷生成層は、電界発光素子の積層方向において複数繰り返して重ねて配置され得る。 The hole injection layer and electron injection layer may be arranged corresponding to the electrode layers, and are usually arranged adjacent to each electrode layer in the stacking direction. The hole transport layer, electron blocking layer, the electroluminescent layer, the hole blocking layer, the electron transport layer, and the charge generation layer may be arranged in a repeated manner in the stacking direction of the electroluminescent element.

 本開示の電界発光装置は、トップエミッション型のフルカラー表示が可能な電界発光装置に好適である。トップエミッション型の電界発光装置では、各色の発光層からの光の波長に応じて電極層間の距離を調整することにより、マイクロキャビティ効果を利用して光取り出し効率を高めることがある。そのためにキャリア機能層のいずれかの層を厚くすることもある。本開示の電界発光装置は、積層方向において、複数の電界発光層とそれぞれの電界発光層に対応するキャリア機能層とを備えたいわゆるタンデム構造を有する。したがって、電極層間の距離を調整するためのキャリア機能層の厚膜化が抑制され、機能的に不要な材料の消費をより抑制することが可能となる。 The electroluminescent device of the present disclosure is suitable for a top-emission type electroluminescent device capable of full-color display. In a top-emission type electroluminescent device, the light extraction efficiency may be improved by utilizing the microcavity effect by adjusting the distance between the electrode layers according to the wavelength of light from the light-emitting layers of each color. For this purpose, one of the layers of the carrier functional layer may be made thicker. The electroluminescent device of the present disclosure has a so-called tandem structure that includes multiple electroluminescent layers and carrier functional layers corresponding to each electroluminescent layer in the stacking direction. Therefore, the thickness of the carrier functional layer for adjusting the distance between the electrode layers is suppressed, making it possible to further suppress the consumption of functionally unnecessary materials.

 [スタック]
 スタックは、積層方向における陽極層と電荷生成層との間、電荷生成層間、及び電荷生成層と陰極層との間、に配置される一の電界発光層を含む層の集合である。スタックには、一の電界発光層の他にキャリア機能層が含まれ得る。スタックは、積層方向において、陽極層と陰極層との間に複数配置されていてもよい。なお、本開示においては、陽極層、陰極層、及び電荷生成層はスタックに含まれないこととする。
[stack]
The stack is a set of layers including one electroluminescent layer disposed between the anode layer and the charge generation layer, between the charge generation layers, and between the charge generation layer and the cathode layer in the stacking direction. The stack may include a carrier functional layer in addition to the one electroluminescent layer. A plurality of stacks may be disposed between the anode layer and the cathode layer in the stacking direction. In the present disclosure, the anode layer, the cathode layer, and the charge generation layer are not included in the stack.

 スタックの厚さは、電界発光層における発光量が理論値かそれに近い値となるように決定される。本開示では、積層方向におけるそれぞれの電界発光層の厚みは前述の比率の割合の範囲で設定され得ることから、このように設定された電界発光層の厚みに応じたスタックの厚みとすることが、電界発光素子の発光効率を高める観点から好ましい。このような観点から、積層方向におけるスタックの厚さに対する当該スタック中の電界発光層の厚みの比率は、0.05以上であることが好ましく、また0.35以下であることが好ましい。なお、スタックの厚みは、スタック内の電界発光層及びキャリア機能層の厚みの総和で求められるが、当該電界発光層及びキャリア機能層のうち、厚みが非常に小さい層(例えば厚みが1nm未満であり得る層)については、スタックの厚みの算出時に無視してもよい。 The thickness of the stack is determined so that the amount of light emitted in the electroluminescent layer is a theoretical value or a value close to it. In the present disclosure, the thickness of each electroluminescent layer in the stacking direction can be set within the range of the ratio described above, so from the viewpoint of increasing the light-emitting efficiency of the electroluminescent device, it is preferable to set the thickness of the stack according to the thickness of the electroluminescent layer set in this way. From this viewpoint, the ratio of the thickness of the electroluminescent layer in the stack to the thickness of the stack in the stacking direction is preferably 0.05 or more and preferably 0.35 or less. Note that the thickness of the stack is determined by the sum of the thicknesses of the electroluminescent layer and the carrier functional layer in the stack, but among the electroluminescent layer and the carrier functional layer, layers with a very small thickness (for example, layers that may have a thickness of less than 1 nm) may be ignored when calculating the thickness of the stack.

 〔電界発光装置の製造方法〕
 本開示の電界発光装置の製造では、積層方向において電荷生成層を介して隣り合う、積層方向の一方側の電界発光層の厚みに対する積層方向の他方側の電界発光層の厚みの比率が4/15より大きく2/3より小さくなるようにそれぞれの電界発光層の厚さを制御する。それ以外は、本開示の電界発光装置は、複数の電界発光層(タンデム構造)を有する電界発光素子を製造可能な公知の製法によって製造することが可能である。当該電界発光装置の製造方法は、陽極層又は陰極層上に電界発光層と電荷生成層とを積層方向において交互に形成する工程を含む方法であればよい。また、本開示の電界発光装置におけるそれぞれの電界発光層の厚さを精密に制御する観点から、当該製造方法では少なくとも電界発光層を蒸着法によって形成することが好ましい。蒸着法で形成される電界発光層は、一般に、高輝度化及び低電圧駆動化の観点からも好ましい他、微細な画素からなる電界発光素子を高精度に形成できるため、高精細な表示装置を実現する観点からも好ましい。さらに、複数の蒸着源を使用する共蒸着法を用いればホスト・ゲスト系の電界発光層の形成も可能であるのでより好ましい。
[Method of manufacturing electroluminescent device]
In the manufacture of the electroluminescent device of the present disclosure, the thickness of each electroluminescent layer is controlled so that the ratio of the thickness of the electroluminescent layer on one side of the stacking direction to the thickness of the electroluminescent layer on the other side of the stacking direction, which are adjacent to each other in the stacking direction via a charge generation layer, is greater than 4/15 and smaller than 2/3. Otherwise, the electroluminescent device of the present disclosure can be manufactured by a known manufacturing method capable of manufacturing an electroluminescent device having a plurality of electroluminescent layers (tandem structure). The manufacturing method of the electroluminescent device may be a method including a step of forming an electroluminescent layer and a charge generation layer alternately in the stacking direction on an anode layer or a cathode layer. In addition, from the viewpoint of precisely controlling the thickness of each electroluminescent layer in the electroluminescent device of the present disclosure, it is preferable that at least the electroluminescent layer is formed by a vapor deposition method in the manufacturing method. The electroluminescent layer formed by the vapor deposition method is generally preferable from the viewpoint of high brightness and low voltage driving, and is also preferable from the viewpoint of realizing a high-definition display device because an electroluminescent device consisting of fine pixels can be formed with high precision. Furthermore, if a co-evaporation method using a plurality of evaporation sources is used, it is more preferable because it is possible to form a host-guest electroluminescent layer.

 本開示の電界発光装置は、特定の層構成を繰り返し有することから、特定の層の形成を複数回繰り返すことによって製造することが可能である。本開示では、積層方向における、厚さの異なる前記電界発光層を、蒸着時間のみを変更して形成することが好ましい。このような製造方法によれば、電界発光層の形成における蒸着の時間以外の条件(例えば、坩堝の温度(蒸着温度)又は蒸着温度等で制御される蒸着レート、ホスト化合物とゲスト化合物との割合(ゲスト化合物のドーピング濃度)、及び、画素形状を規定する蒸着マスク等)を一定とすることが可能となる。そのため、積層方向における各電界発光層における条件の変更による特性のばらつきが抑制され、積層方向における電界発光層の厚さの違いによる効果をより一層顕著に発現させることが可能となる。 The electroluminescent device of the present disclosure has a specific layer structure repeated, and therefore can be manufactured by repeating the formation of a specific layer multiple times. In the present disclosure, it is preferable to form the electroluminescent layers having different thicknesses in the stacking direction by changing only the deposition time. With such a manufacturing method, it is possible to keep constant the conditions other than the deposition time in forming the electroluminescent layer (for example, the deposition rate controlled by the crucible temperature (deposition temperature) or deposition temperature, the ratio of the host compound to the guest compound (doping concentration of the guest compound), and the deposition mask that defines the pixel shape, etc.). Therefore, the variation in characteristics due to changes in the conditions of each electroluminescent layer in the stacking direction is suppressed, and the effect due to the difference in thickness of the electroluminescent layer in the stacking direction can be more significantly expressed.

 〔表示装置〕
 本開示に係る表示装置は、上述の電界発光装置を備えている。本開示の表示装置は、上述の電界発光装置を有する以外は、公知の発光装置を有する公知の表示装置と同様に構成とすることが可能である。表示装置の例として、テレビジョン装置及びスマートフォン等が挙げられる。
[Display Device]
The display device according to the present disclosure includes the electroluminescent device described above. The display device according to the present disclosure can be configured in the same manner as a known display device having a known light-emitting device, except for having the electroluminescent device described above. Examples of the display device include a television set and a smartphone.

 〔具体的態様の説明〕
 以下、本開示の電界発光装置、その製造方法及び表示装置について、有機発光ダイオード(Organic Light Emitting Diode:OLED)を備える電界発光装置を例に、図面を用いてより具体的に説明する。本明細書において、同様の基本構成のうちの異なる色に関する構成については、当該基本構成の符号に色を示す符号をさらに添えて示す。例えば、赤色に関する構成にはR、緑色に関する構成にはG、青色に関する構成にはB、の符号をさらに添えて示す。
[Description of Specific Embodiments]
Hereinafter, the electroluminescent device, its manufacturing method, and display device of the present disclosure will be described in more detail with reference to the drawings, taking an electroluminescent device equipped with an organic light emitting diode (OLED) as an example. In this specification, for configurations related to different colors among similar basic configurations, a code indicating the color is further added to the code of the basic configuration. For example, the code R is further added to the configuration related to red, the code G is further added to the configuration related to green, and the code B is further added to the configuration related to blue.

 [実施形態1]
 <構成>
 図1は、本開示の実施形態1に係る表示装置100の構成を模式的に示す平面図である。図1には、表示装置の一例であるスマートフォンが示されている。図1に示されるように、表示装置100は、額縁領域NDAと、表示領域DAとを備えている。表示装置100の表示領域DAには、複数の画素PIXが備えられており、各画素PIXは、それぞれ、赤色サブ画素RSPと、緑色サブ画素GSPと、青色サブ画素BSPとを含む。
[Embodiment 1]
<Configuration>
Fig. 1 is a plan view showing a schematic configuration of a display device 100 according to a first embodiment of the present disclosure. Fig. 1 shows a smartphone as an example of a display device. As shown in Fig. 1, the display device 100 includes a frame area NDA and a display area DA. The display area DA of the display device 100 includes a plurality of pixels PIX, each of which includes a red sub-pixel RSP, a green sub-pixel GSP, and a blue sub-pixel BSP.

 なお、本開示における表示装置の画素の構成は上記の構成に限定されない。本開示の表示装置では、例えば、1画素PIXは、赤色サブ画素RSP、緑色サブ画素GSP及び青色サブ画素BSPの他に、さらに他の色のサブ画素を含んでいてもよい。 Note that the pixel configuration of the display device of the present disclosure is not limited to the above configuration. In the display device of the present disclosure, for example, one pixel PIX may include subpixels of other colors in addition to the red subpixel RSP, green subpixel GSP, and blue subpixel BSP.

 図2は、図1の表示装置100の層構成を模式的に示す図である。図2に示すように、表示装置100には、基板11、バッファ層12、画素回路を含むTFT(薄膜トランジスタ)層20、電界発光装置13及びエッジカバー膜16、封止層14、ならびに外部機能層15がこの順に積層されている。 FIG. 2 is a diagram showing a schematic layer structure of the display device 100 in FIG. 1. As shown in FIG. 2, the display device 100 has a substrate 11, a buffer layer 12, a TFT (thin film transistor) layer 20 including pixel circuits, an electroluminescent device 13 and an edge cover film 16, a sealing layer 14, and an external functional layer 15 laminated in this order.

 基板11は、ガラス基板、あるいは、ポリイミド等の樹脂を主成分とする可撓性基板であり、例えば、2層のポリイミド膜及びこれらに挟まれた無機膜によって基板11を構成することもできる。バッファ層12は、水、酸素等の異物の侵入を防ぐ無機絶縁層で構成することができる。TFT層20には、赤色電界発光素子10R、緑色電界発光素子10G、及び青色電界発光素子10Bを制御する画素回路が含まれている。 The substrate 11 is a glass substrate or a flexible substrate whose main component is a resin such as polyimide. For example, the substrate 11 can be made of two polyimide films and an inorganic film sandwiched between them. The buffer layer 12 can be made of an inorganic insulating layer that prevents the intrusion of foreign matter such as water and oxygen. The TFT layer 20 includes pixel circuits that control the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.

 電界発光装置13は、赤色電界発光素子10R、緑色電界発光素子10G、及び青色電界発光素子10Bを含む。赤色電界発光素子10Rは、陽極層21R及び陰極層22Rを含み、これらの電極層の間に第1電界発光層34R及び第2電界発光層53Rを含む。同様に、緑色電界発光素子10Gは、陽極層21G、第1電界発光層34G、第2電界発光層53G及び陰極層22Gを含み、青色電界発光素子10Bは、陽極層21B、第1電界発光層34B、第2電界発光層53B及び陰極層22Bを含む。 The electroluminescent device 13 includes a red electroluminescent element 10R, a green electroluminescent element 10G, and a blue electroluminescent element 10B. The red electroluminescent element 10R includes an anode layer 21R and a cathode layer 22R, and includes a first electroluminescent layer 34R and a second electroluminescent layer 53R between these electrode layers. Similarly, the green electroluminescent element 10G includes an anode layer 21G, a first electroluminescent layer 34G, a second electroluminescent layer 53G, and a cathode layer 22G, and the blue electroluminescent element 10B includes an anode layer 21B, a first electroluminescent layer 34B, a second electroluminescent layer 53B, and a cathode layer 22B.

 ここで、図2には、赤色電界発光素子10R、緑色電界発光素子10G及び青色電界発光素子10Bのそれぞれに、陰極層22R、陰極層22G及び陰極層22Bが設けられる構成が示されている。本開示の電界発光装置13は、この構成に限られない。例えば、陰極層22R、陰極層22G及び陰極層22Bは、赤色電界発光素子10R、緑色電界発光素子10G及び青色電界発光素子10Bに跨って設けられた共通の電極層であってもよい。 Here, FIG. 2 shows a configuration in which the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B are provided with the cathode layer 22R, the cathode layer 22G, and the cathode layer 22B, respectively. The electroluminescent device 13 of the present disclosure is not limited to this configuration. For example, the cathode layer 22R, the cathode layer 22G, and the cathode layer 22B may be a common electrode layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.

 電界発光装置13を覆う封止層14は、水、酸素等の異物が電界発光装置13へ浸透することを防ぐ層であり、例えば、2層の無機封止膜とこれら間に形成される有機膜とで構成することができる。外部機能層15は、表示装置100に、光学制御、タッチセンサ、表面保護等の各種機能を付加する層である。 The sealing layer 14 that covers the electroluminescent device 13 is a layer that prevents foreign substances such as water and oxygen from penetrating into the electroluminescent device 13, and can be composed of, for example, two layers of inorganic sealing films and an organic film formed between them. The external functional layer 15 is a layer that adds various functions to the display device 100, such as optical control, a touch sensor, and surface protection.

 エッジカバー膜16は絶縁性であり、各陽極層21R、21G、21Bのエッジを覆っている。エッジカバー膜16は、例えば、ポリイミド、アクリル樹脂等の有機材料を塗布した後にフォトリソグラフィよってパターニングすることで形成される。なお、赤色電界発光素子10R、緑色電界発光素子10G、及び青色電界発光素子10Bは、一例として有機発光ダイオード(Organic Light Emitting Diode:OLED)である。 The edge cover film 16 is insulating and covers the edges of each anode layer 21R, 21G, 21B. The edge cover film 16 is formed by applying an organic material such as polyimide or acrylic resin, and then patterning it by photolithography. The red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B are, for example, organic light emitting diodes (OLEDs).

 図3を参照して、図2に示された、電界発光素子10の素子構成について説明する。図3は、図2に示す層構成における電界発光素子の層構成を模式的に示す図である。 The element configuration of the electroluminescent element 10 shown in FIG. 2 will be described with reference to FIG. 3. FIG. 3 is a schematic diagram showing the layer configuration of the electroluminescent element having the layer configuration shown in FIG. 2.

 図3に示すように、基板11、バッファ層12及びTFT層20がこの順で積層されており、電界発光素子10は、陽極層21、層の集合30、第1電荷生成層40、層の集合50、及び陰極層22が、この順でTFT層20上に積層されて構成されている。本開示に係る電界発光素子10は、トップエミッション型(上側、つまり陰極層22側から光を取り出す構造)である。電界発光素子10では、例えば、陽極層21がアノード、陰極層22がカソードとして機能する。 As shown in FIG. 3, the substrate 11, buffer layer 12, and TFT layer 20 are stacked in this order, and the electroluminescent element 10 is configured by stacking an anode layer 21, a set of layers 30, a first charge generation layer 40, a set of layers 50, and a cathode layer 22 on the TFT layer 20 in this order. The electroluminescent element 10 according to the present disclosure is of a top emission type (a structure in which light is extracted from the upper side, i.e., the cathode layer 22 side). In the electroluminescent element 10, for example, the anode layer 21 functions as the anode, and the cathode layer 22 functions as the cathode.

 層の集合30は、正孔注入層31、第1正孔輸送層32、第1電子ブロック層33、第1電界発光層34、第1正孔ブロック層35、及び第1電子輸送層36により構成されている。層の集合50は、第2正孔輸送層51、第2電子ブロック層52、第2電界発光層53、第2正孔ブロック層54、第2電子輸送層55、及び電子注入層56により構成されている。層の集合30及び層の集合50の間に、n型第1電荷生成層(電子生成層)41及びp型第1電荷生成層(正孔生成層)42を含む第1電荷生成層40が配されている。図3の電界発光素子10において、層の集合30は「第1スタック」とも言い、層の集合50は「第2スタック」とも言う。層の集合30、第1電荷生成層40及び層の集合50によって有機積層体60が構成される。 The layer set 30 is composed of a hole injection layer 31, a first hole transport layer 32, a first electron blocking layer 33, a first electroluminescent layer 34, a first hole blocking layer 35, and a first electron transport layer 36. The layer set 50 is composed of a second hole transport layer 51, a second electron blocking layer 52, a second electroluminescent layer 53, a second hole blocking layer 54, a second electron transport layer 55, and an electron injection layer 56. Between the layer set 30 and the layer set 50, a first charge generation layer 40 including an n-type first charge generation layer (electron generation layer) 41 and a p-type first charge generation layer (hole generation layer) 42 is disposed. In the electroluminescent element 10 of FIG. 3, the layer set 30 is also called a "first stack", and the layer set 50 is also called a "second stack". The layer set 30, the first charge generation layer 40, and the layer set 50 constitute an organic laminate 60.

 正孔注入層31、第1正孔輸送層32、第1電子ブロック層33、第1正孔ブロック層35、第1電子輸送層36、n型第1電荷生成層41、p型第1電荷生成層42、第2正孔輸送層51、第2電子ブロック層52、第2正孔ブロック層54、第2電子輸送層55、及び電子注入層56は、キャリア(電子又は正孔)の注入、移動、及び生成の少なくとも一つに寄与するキャリア機能層である。 The hole injection layer 31, the first hole transport layer 32, the first electron blocking layer 33, the first hole blocking layer 35, the first electron transport layer 36, the first n-type charge generation layer 41, the first p-type charge generation layer 42, the second hole transport layer 51, the second electron blocking layer 52, the second hole blocking layer 54, the second electron transport layer 55, and the electron injection layer 56 are carrier functional layers that contribute to at least one of the injection, movement, and generation of carriers (electrons or holes).

 電界発光素子10は、積層方向において、陽極層21及び陰極層22との間に第1電界発光層34及び第2電界発光層53の二層の電界発光層が配置される、いわゆるタンデム構造の電界発光素子である。積層方向に重なる第1電界発光層34及び第2電界発光層53は、いずれも同じ色に発光する電界発光層である。 The electroluminescent element 10 is an electroluminescent element of a so-called tandem structure in which two electroluminescent layers, a first electroluminescent layer 34 and a second electroluminescent layer 53, are disposed between the anode layer 21 and the cathode layer 22 in the stacking direction. The first electroluminescent layer 34 and the second electroluminescent layer 53, which are stacked in the stacking direction, are both electroluminescent layers that emit the same color.

 第1電界発光層34の厚みは発光色によって異なるが、例えば赤色電界発光素子及び緑色電界素子の第1電界発光層34の厚みは25nm~50nmであり、青色電界発光素子の第1電界発光層34の厚みは10~25nmである。第1電界発光層34の厚み(T1)に対する第2電界発光層53の厚み(T2)の比率(T2/T1)は、4/15より大きく2/3より小さい。より好ましくは、第1電界発光層34の厚みに対する第2電界発光層53の厚みの比率は、1/3以上1/2以下である。第1電界発光層34及び第2電界発光層53は、いずれも、ホスト・ゲスト系の電界発光層である。 The thickness of the first electroluminescent layer 34 varies depending on the luminescent color. For example, the thickness of the first electroluminescent layer 34 of the red electroluminescent element and the green electroluminescent element is 25 nm to 50 nm, and the thickness of the first electroluminescent layer 34 of the blue electroluminescent element is 10 to 25 nm. The ratio (T2/T1) of the thickness (T2) of the second electroluminescent layer 53 to the thickness (T1) of the first electroluminescent layer 34 is greater than 4/15 and less than 2/3. More preferably, the ratio of the thickness of the second electroluminescent layer 53 to the thickness of the first electroluminescent layer 34 is greater than 1/3 and less than 1/2. Both the first electroluminescent layer 34 and the second electroluminescent layer 53 are host-guest electroluminescent layers.

 <電界発光素子の製造方法>
 次に、図4を参照して電界発光素子10の製造方法の一例について説明する。図4は、図3に示す電界発光素子の製造方法の一例を示すフローチャートである。
<Method of manufacturing electroluminescent device>
Next, an example of a method for manufacturing the electroluminescent element 10 will be described with reference to Fig. 4. Fig. 4 is a flow chart showing an example of a method for manufacturing the electroluminescent element shown in Fig. 3.

 図4に示すように、ステップS1では、TFT層20の上に陽極層21を形成する。具体的には、スパッタ法を用いて、Ag層及びIn-Sn-O層を順次形成する。 As shown in FIG. 4, in step S1, an anode layer 21 is formed on the TFT layer 20. Specifically, an Ag layer and an In-Sn-O layer are formed in sequence using a sputtering method.

 ステップS2では、陽極層21の上に正孔注入層31を形成する。具体的には、正孔輸送材料と電子受容材料の共蒸着を、所定の膜厚及び割合で積層されるようにそれぞれの蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用いずワークの全面に一様に蒸着膜を形成する。 In step S2, a hole injection layer 31 is formed on the anode layer 21. Specifically, the hole transport material and the electron acceptor material are co-evaporated at a predetermined deposition rate by adjusting the deposition temperature and deposition time of each material so that they are laminated at a predetermined film thickness and ratio. Here, a deposition film is formed uniformly over the entire surface of the workpiece without using a fine metal mask.

 なお、図4に基づく製法の具体的な説明では、一部のキャリア機能層について全色の電界発光素子間に共通の層を形成しているが、本開示の製法はこれに限定されない。各キャリア機能層の厚さは、例えば各色の電界発光層に応じて色ごとに異なっていてもよい。このように部分的に厚さが異なるキャリア機能層は、マスクを介した蒸着によって形成可能である。 In the specific description of the manufacturing method based on FIG. 4, a common layer is formed between electroluminescent elements of all colors for some of the carrier functional layers, but the manufacturing method of the present disclosure is not limited to this. The thickness of each carrier functional layer may be different for each color, for example, depending on the electroluminescent layer of each color. A carrier functional layer having a partially different thickness in this way can be formed by vapor deposition through a mask.

 ステップS3では、正孔注入層31の上に第1正孔輸送層32を形成する。具体的には、正孔輸送材料の蒸着を、所定の膜厚で積層されるように蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用いずに蒸着膜を形成する。 In step S3, a first hole transport layer 32 is formed on the hole injection layer 31. Specifically, the hole transport material is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the layer is deposited to a predetermined thickness. Here, the evaporated film is formed without using a fine metal mask.

 ステップS4では、第1正孔輸送層32の上に第1電子ブロック層33を形成する。具体的には、正孔輸送材料の蒸着を、所定の膜厚で積層されるように蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用い、各色に応じた第1の厚みとなるように蒸着する。第1の厚みは、各色の電界発光素子で同じであってもよいし、異なっていてもよい。 In step S4, a first electron blocking layer 33 is formed on the first hole transport layer 32. Specifically, the hole transport material is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the hole transport material is deposited to a predetermined thickness. Here, a fine metal mask is used to evaporate the material to a first thickness corresponding to each color. The first thickness may be the same for the electroluminescent element of each color, or it may be different.

 ステップS5では、第1電子ブロック層33の上に第1電界発光層34を形成する。具体的には、ホスト化合物とゲスト化合物(ドーパント)との共蒸着を、所定の膜厚及びゲスト化合物濃度(ドーパント濃度)で積層されるようにそれぞれの蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用い、各色に応じた材料を、それぞれの厚みとゲスト化合物濃度を精密に制御しながら蒸着する。また、積層方向において、層の集合30の厚さに対する第1電界発光層34の厚みの比率が、0.05以上0.35以下となるように第1電界発光層34が蒸着される。 In step S5, the first electroluminescent layer 34 is formed on the first electron blocking layer 33. Specifically, the host compound and the guest compound (dopant) are co-evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the layers are laminated with a predetermined film thickness and guest compound concentration (dopant concentration). Here, a fine metal mask is used to evaporate materials according to each color while precisely controlling the thickness and guest compound concentration. The first electroluminescent layer 34 is evaporated so that the ratio of the thickness of the first electroluminescent layer 34 to the thickness of the layer set 30 in the stacking direction is 0.05 to 0.35.

 ステップS6では、第1電界発光層34の上に第1正孔ブロック層35を形成する。具体的には、電子輸送材料の蒸着を、所定の膜厚で積層されるように蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用いずに蒸着膜を形成する。 In step S6, the first hole blocking layer 35 is formed on the first electroluminescent layer 34. Specifically, the deposition temperature and deposition time are adjusted to deposit an electron transport material at a predetermined deposition rate so that the material is deposited to a predetermined thickness. Here, the deposition film is formed without using a fine metal mask.

 ステップS7では、第1正孔ブロック層35の上に第1電子輸送層36を形成する。具体的には、電子輸送材料の蒸着を、所定の膜厚で積層されるように蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。当該蒸着は、電子輸送材料とリチウムキノリンの共蒸着でもよい。ここでは、ファインメタルマスクを用いずに蒸着膜を形成する。 In step S7, the first electron transport layer 36 is formed on the first hole blocking layer 35. Specifically, the deposition temperature and deposition time are adjusted to deposit the electron transport material at a predetermined deposition rate so that the layer is formed to a predetermined thickness. The deposition may be co-deposition of the electron transport material and lithium quinoline. Here, the deposition film is formed without using a fine metal mask.

 ステップS8では、第1電子輸送層36の上にn型第1電荷生成層41を形成する。具体的には、有機系の電子輸送材料と無機の金属材料であり電子供給材料であるYbもしくはLiとの共蒸着を、所定の膜厚及び割合で積層されるようにそれぞれの蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用いずに蒸着膜を形成する。 In step S8, the n-type first charge generation layer 41 is formed on the first electron transport layer 36. Specifically, co-evaporation of an organic electron transport material and an inorganic metal material, Yb or Li, which is an electron supply material, is performed at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the layers are laminated to a predetermined film thickness and ratio. Here, the evaporated film is formed without using a fine metal mask.

 ステップS9では、n型第1電荷生成層41の上にp型第1電荷生成層42を形成する。具体的には、有機系の正孔輸送材料と有機系の電子受容材料の共蒸着を、所定の膜厚及び割合で積層されるようにそれぞれの蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用いずに蒸着膜を形成する。 In step S9, a p-type first charge generation layer 42 is formed on the n-type first charge generation layer 41. Specifically, the co-evaporation of an organic hole transport material and an organic electron acceptor material is performed at a predetermined deposition rate by adjusting the deposition temperature and deposition time of each material so that the material is laminated at a predetermined film thickness and ratio. Here, the deposition film is formed without using a fine metal mask.

 ステップS10では、p型第1電荷生成層42の上に第2正孔輸送層51を形成する。具体的には、正孔輸送材料の蒸着を、所定の膜厚で積層されるように蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用いずに蒸着膜を形成する。 In step S10, the second hole transport layer 51 is formed on the p-type first charge generation layer 42. Specifically, the hole transport material is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the hole transport material is deposited to a predetermined thickness. Here, the evaporated film is formed without using a fine metal mask.

 ステップS11では、第2正孔輸送層51の上に第2電子ブロック層52を形成する。具体的には、正孔輸送材料の蒸着を、所定の膜厚で積層されるように蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用い、各色に応じた第2の厚みとなるように蒸着する。第2の厚みも、第1の厚みと同様に、各色の電界発光素子で同じであってもよいし、異なっていてもよい。 In step S11, a second electron blocking layer 52 is formed on the second hole transport layer 51. Specifically, the hole transport material is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the hole transport material is deposited to a predetermined thickness. Here, a fine metal mask is used to evaporate the material to a second thickness corresponding to each color. As with the first thickness, the second thickness may be the same or different for the electroluminescent elements of each color.

 ステップS12では、第2電子ブロック層52の上に第2電界発光層53を形成する。具体的には、ホスト化合物とゲスト化合物(ドーパント)との共蒸着を、所定の膜厚及びゲスト化合物濃度(ドーパント濃度)で積層されるようにそれぞれの蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用い、各色に応じた材料を、それぞれの厚みとゲスト化合物濃度を精密に制御しながら蒸着する。 In step S12, the second electroluminescent layer 53 is formed on the second electron blocking layer 52. Specifically, the host compound and the guest compound (dopant) are co-evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that the layers are laminated to a predetermined film thickness and guest compound concentration (dopant concentration). Here, a fine metal mask is used to evaporate materials according to each color while precisely controlling the thickness and guest compound concentration of each.

 ここで、キャリア機能層の材料選択の結果、陰極層22からの電子注入性が陽極層21からの正孔注入性より低い、及び/又はp型第1電荷生成層42からの正孔注入性の方がn型第1電荷生成層41からの電子注入性よりも低い、とする。より具体的には、陰極層22からの電子注入量が陽極層21からの正孔注入量より少ない、及び/又はp型第1電荷生成層42からの正孔注入量がn型第1電荷生成層41からの電子注入量より少ない、とする。あるいは、陰極層22からの電子注入性とp型第1電荷生成層42からの正孔注入性との差の方が、陽極層21からの正孔注入性とn型第1電荷生成層41からの電子注入性との差よりも大きい、すなわち、第2電界発光層53における電子注入量と正孔注入量との差の方が、第1電界発光層34における電子注入量と正孔注入量との差よりも大きい、とする。このとき、積層方向において、第1電界発光層34に対する第2電界発光層53の厚みの比率が4/15より大きく2/3より小さくなるように、第2電界発光層53が蒸着される。より好ましくは、第1電界発光層34の厚みに対する第2電界発光層53の厚みの比率は、1/3以上1/2以下である。また、積層方向において、層の集合50の厚みに対する第2電界発光層53の厚みの比率が0.05以上0.35以下となるように第2電界発光層53が蒸着される。 Here, as a result of the selection of the material of the carrier functional layer, it is assumed that the electron injection from the cathode layer 22 is lower than the hole injection from the anode layer 21, and/or the hole injection from the p-type first charge generation layer 42 is lower than the electron injection from the n-type first charge generation layer 41. More specifically, it is assumed that the amount of electron injection from the cathode layer 22 is lower than the amount of hole injection from the anode layer 21, and/or the amount of hole injection from the p-type first charge generation layer 42 is lower than the amount of electron injection from the n-type first charge generation layer 41. Alternatively, it is assumed that the difference between the electron injection from the cathode layer 22 and the hole injection from the p-type first charge generation layer 42 is greater than the difference between the hole injection from the anode layer 21 and the electron injection from the n-type first charge generation layer 41, i.e., the difference between the electron injection amount and the hole injection amount in the second electroluminescent layer 53 is greater than the difference between the electron injection amount and the hole injection amount in the first electroluminescent layer 34. At this time, the second electroluminescent layer 53 is deposited so that the ratio of the thickness of the second electroluminescent layer 53 to the thickness of the first electroluminescent layer 34 in the stacking direction is greater than 4/15 and less than 2/3. More preferably, the ratio of the thickness of the second electroluminescent layer 53 to the thickness of the first electroluminescent layer 34 is greater than or equal to 1/3 and less than or equal to 1/2. In addition, the second electroluminescent layer 53 is deposited so that the ratio of the thickness of the second electroluminescent layer 53 to the thickness of the set of layers 50 in the stacking direction is greater than or equal to 0.05 and less than or equal to 0.35.

 あるいは、キャリア機能層の材料選択の結果、陰極層22からの電子注入性が陽極層21からの正孔注入性よりも高い、及び/又はp型第1電荷生成層42からの正孔注入性がn型第1電荷生成層41からの電子注入性よりも高い、とする。より具体的には、陰極層22からの電子注入量が陽極層21からの正孔注入量より多い、及び/又はp型第1電荷生成層42からの正孔注入量がn型第1電荷生成層41からの電子注入量より多い、とする。あるいは、陽極層21からの正孔注入性とn型第1電荷生成層41からの電子注入性との差の方が、陰極層22からの電子注入性とp型第1電荷生成層42からの正孔注入性との差よりも大きい、すなわち、第1電界発光層34における電子注入量と正孔注入量との差の方が、第2電界発光層53における電子注入量と正孔注入量との差よりも大きい、とする。このとき、積層方向において、第2電界発光層53に対する第1電界発光層34の厚みの比率が4/15より大きく2/3より小さくなるように、より好ましくは1/3以上1/2以下となるように、第2電界発光層53が蒸着される。この場合も、積層方向において、層の集合50の厚みに対する第2電界発光層53の厚みの比率が0.05以上0.35以下となるように第2電界発光層53が蒸着される。 Alternatively, as a result of the selection of the material of the carrier functional layer, the electron injection from the cathode layer 22 is higher than the hole injection from the anode layer 21, and/or the hole injection from the p-type first charge generation layer 42 is higher than the electron injection from the n-type first charge generation layer 41. More specifically, the amount of electron injection from the cathode layer 22 is higher than the amount of hole injection from the anode layer 21, and/or the amount of hole injection from the p-type first charge generation layer 42 is higher than the amount of electron injection from the n-type first charge generation layer 41. Alternatively, the difference between the hole injection from the anode layer 21 and the electron injection from the n-type first charge generation layer 41 is larger than the difference between the electron injection from the cathode layer 22 and the hole injection from the p-type first charge generation layer 42, i.e., the difference between the electron injection amount and the hole injection amount in the first electroluminescent layer 34 is larger than the difference between the electron injection amount and the hole injection amount in the second electroluminescent layer 53. At this time, the second electroluminescent layer 53 is deposited so that the ratio of the thickness of the first electroluminescent layer 34 to the second electroluminescent layer 53 in the stacking direction is greater than 4/15 and less than 2/3, more preferably greater than 1/3 and less than 1/2. In this case, too, the second electroluminescent layer 53 is deposited so that the ratio of the thickness of the second electroluminescent layer 53 to the thickness of the set of layers 50 in the stacking direction is greater than 0.05 and less than 0.35.

 ステップS13では、第2電界発光層53の上に第2正孔ブロック層54を形成する。具体的には、電子輸送材料の蒸着を、所定の膜厚で積層されるように蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用いずに蒸着膜を形成する。 In step S13, the second hole blocking layer 54 is formed on the second electroluminescent layer 53. Specifically, the deposition temperature and deposition time are adjusted to deposit an electron transport material at a predetermined deposition rate so that the material is deposited to a predetermined thickness. Here, the deposition film is formed without using a fine metal mask.

 ステップS14では、第2正孔ブロック層54の上に、第2電子輸送層55の形成を行う。具体的には、電子輸送材料の蒸着を、所定の膜厚で積層されるように蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。電子輸送材料とリチウムキノリンの共蒸着でもよい。ここでは、ファインメタルマスクを用いずに蒸着膜を形成する。 In step S14, the second electron transport layer 55 is formed on the second hole blocking layer 54. Specifically, the deposition temperature and deposition time are adjusted to deposit the electron transport material at a predetermined deposition rate so that the layer is formed to a predetermined thickness. Co-deposition of the electron transport material and lithium quinoline may also be performed. Here, the deposition film is formed without using a fine metal mask.

 ステップS15では、第2電子輸送層55の上に電子注入層56を形成する。具体的には、フッ化リチウムの蒸着を、所定の膜厚で積層されるように蒸着温度及び蒸着時間を調整して所定の蒸着レートにて行う。ここでは、ファインメタルマスクを用いずに蒸着膜を形成する。 In step S15, an electron injection layer 56 is formed on the second electron transport layer 55. Specifically, lithium fluoride is evaporated at a predetermined evaporation rate by adjusting the evaporation temperature and evaporation time so that a layer with a predetermined thickness is formed. Here, the evaporated film is formed without using a fine metal mask.

 ステップS16では、電子注入層56の上に、陰極層22の形成を行う。具体的には、蒸着法を用いて、例えばマグネシウム銀合金薄膜を形成する。 In step S16, the cathode layer 22 is formed on the electron injection layer 56. Specifically, for example, a magnesium-silver alloy thin film is formed using a deposition method.

 <発光のメカニズム>
 図5を参照して、フルカラー表示が可能な電界発光装置13の電界発光素子10の発光メカニズムについて説明する。図5は、図2に示す電界発光装置13の電界発光素子10の発光メカニズムを説明するための図である。図5において、電界発光素子10の構成は、要部のみ示されている。
<Light Emitting Mechanism>
The light emitting mechanism of the electroluminescent element 10 of the electroluminescent device 13 capable of full color display will be described with reference to Fig. 5. Fig. 5 is a diagram for explaining the light emitting mechanism of the electroluminescent element 10 of the electroluminescent device 13 shown in Fig. 2. In Fig. 5, only the essential parts of the configuration of the electroluminescent element 10 are shown.

 図5に示す電界発光素子10は、陽極層21と陰極層22との間に第1電界発光層34及び第2電界発光層53の二層の電界発光層が形成されたタンデム構造を有する有機EL素子である。第1電界発光層34と第2電界発光層53との間には第1電荷生成層40が配置されている。図5に示す例では、赤色電界発光素子10R、緑色電界発光素子10G及び青色電界発光素子10Bのそれぞれについて、同色の光を放出する第1電界発光層34及び第2電界発光層53が積層されている。 The electroluminescent element 10 shown in FIG. 5 is an organic EL element having a tandem structure in which two electroluminescent layers, a first electroluminescent layer 34 and a second electroluminescent layer 53, are formed between an anode layer 21 and a cathode layer 22. A first charge generation layer 40 is disposed between the first electroluminescent layer 34 and the second electroluminescent layer 53. In the example shown in FIG. 5, the first electroluminescent layer 34 and the second electroluminescent layer 53 that emit light of the same color are laminated for each of the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.

 より詳しくは、図5に示すように、赤色電界発光素子10Rでは、陽極層21R、第1電界発光層34R、第1電荷生成層40R、第2電界発光層53R、及び陰極層22Rが、この順に配置されている。赤色電界発光素子10Rにおいて、積層方向における陽極層21Rと第1電荷生成層40Rとの間に配置される、第1電界発光層34Rを含む層の集合30Rが第1スタックである。そして、第1電荷生成層40Rと陰極層22Rとの間に配置される、第2電界発光層53Rを含む層の集合50Rが第2スタックである。 More specifically, as shown in FIG. 5, in the red electroluminescent element 10R, the anode layer 21R, the first electroluminescent layer 34R, the first charge generation layer 40R, the second electroluminescent layer 53R, and the cathode layer 22R are arranged in this order. In the red electroluminescent element 10R, the set of layers 30R including the first electroluminescent layer 34R, which is arranged between the anode layer 21R and the first charge generation layer 40R in the stacking direction, is the first stack. And the set of layers 50R including the second electroluminescent layer 53R, which is arranged between the first charge generation layer 40R and the cathode layer 22R, is the second stack.

 同様に、緑色電界発光素子10Gでは、陽極層21G、第1電界発光層34G、第1電荷生成層40G、第2電界発光層53G、及び陰極層22Gが、この順に配置されている。緑色電界発光素子10Gにおける第1スタックは、積層方向における陽極層21Gと第1電荷生成層40Gとの間に配置される、第1電界発光層34Gを含む層の集合30Gである。緑色電界発光素子10Gにおける第2スタックは、第1電荷生成層40Gと陰極層22Gとの間に配置される、第2電界発光層53Gを含む層の集合50Gである。 Similarly, in the green electroluminescent element 10G, the anode layer 21G, the first electroluminescent layer 34G, the first charge generation layer 40G, the second electroluminescent layer 53G, and the cathode layer 22G are arranged in this order. The first stack in the green electroluminescent element 10G is a set of layers 30G including the first electroluminescent layer 34G, which is arranged between the anode layer 21G and the first charge generation layer 40G in the stacking direction. The second stack in the green electroluminescent element 10G is a set of layers 50G including the second electroluminescent layer 53G, which is arranged between the first charge generation layer 40G and the cathode layer 22G.

 また、青色電界発光素子10Bでは、陽極層21B、第1電界発光層34B、第1電荷生成層40B、第2電界発光層53B、及び陰極層22Bが、この順に積層されている。青色電界発光素子10Bにおける第1スタックは、積層方向における陽極層21Bと第1電荷生成層40Bとの間に配置される、第1電界発光層34Bを含む層の集合30Bである。青色電界発光素子10Bにおける第2スタックは、第1電荷生成層40Bと陰極層22Bとの間に配置される、第2電界発光層53Bを含む層の集合50Bである。 In addition, in blue electroluminescent element 10B, anode layer 21B, first electroluminescent layer 34B, first charge generation layer 40B, second electroluminescent layer 53B, and cathode layer 22B are stacked in this order. The first stack in blue electroluminescent element 10B is a set of layers 30B including first electroluminescent layer 34B, which is disposed between anode layer 21B and first charge generation layer 40B in the stacking direction. The second stack in blue electroluminescent element 10B is a set of layers 50B including second electroluminescent layer 53B, which is disposed between first charge generation layer 40B and cathode layer 22B.

 ここで、陰極層22R、22G、22Bが、赤色電界発光素子10R、緑色電界発光素子10G及び青色電界発光素子10Bのそれぞれに設けられている。陰極層22R、22G、22Bは、赤色電界発光素子10R、緑色電界発光素子10G及び青色電界発光素子10Bに跨って設けられた共通の電極層であってもよい。 Here, cathode layers 22R, 22G, and 22B are provided for each of the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B. The cathode layers 22R, 22G, and 22B may be a common electrode layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.

 さらに、図5において、赤色電界発光素子10R、緑色電界発光素子10G及び青色電界発光素子10Bのそれぞれの最上部に、酸素及び水分の侵入防止のために設けられる封止層14が図示されている。封止層14も、赤色電界発光素子10R、緑色電界発光素子10G及び青色電界発光素子10Bに跨って設けられた共通の層であってもよい。 Furthermore, in FIG. 5, a sealing layer 14 is shown provided at the top of each of the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B to prevent the intrusion of oxygen and moisture. The sealing layer 14 may also be a common layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.

 なお、各色の電界発光素子10R、10G及び10Bに含まれる各層の集合30R、30G及び30B、50R、50G及び50Bには、図示しないキャリア機能層(電子注入層、電子輸送層、正孔輸送層、正孔注入層等)が配置されている。 In addition, the layer assemblies 30R, 30G and 30B, 50R, 50G and 50B included in the electroluminescent elements 10R, 10G and 10B of the respective colors have carrier functional layers (electron injection layer, electron transport layer, hole transport layer, hole injection layer, etc.) arranged therein.

 以下、電界発光素子10の発光メカニズムをさらに説明する。以下の説明において、赤色電界発光素子10R、緑色電界発光素子10G、及び青色電界発光素子10Bは何れも同じ発光メカニズムであるため、各基本構成を示す符号に付加される色を示す符号R、G、及びBについては、省略して説明する。 The light emission mechanism of the electroluminescent element 10 will be further explained below. In the following explanation, the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B all have the same light emission mechanism, so the symbols R, G, and B that indicate the colors added to the symbols indicating each basic configuration will be omitted.

 電界発光素子10に電流が流れると、陽極層21から第1電界発光層34に正孔が供給されるとともに、陰極層22から第2電界発光層53に電子が供給される。また、電界発光素子10に電流が流れると、n型第1電荷生成層41により生成された電子が第1電界発光層34に供給されるとともに、p型第1電荷生成層42により生成された正孔が第2電界発光層53に供給される。 When a current flows through the electroluminescent element 10, holes are supplied from the anode layer 21 to the first electroluminescent layer 34, and electrons are supplied from the cathode layer 22 to the second electroluminescent layer 53. In addition, when a current flows through the electroluminescent element 10, electrons generated by the n-type first charge generation layer 41 are supplied to the first electroluminescent layer 34, and holes generated by the p-type first charge generation layer 42 are supplied to the second electroluminescent layer 53.

 これにより、第1電界発光層34において電子及び正孔が再結合して電子・正孔対(又は励起子ともいう)が生成され、それが基底状態に遷移することにより所定波長域の光が放出される。また、第2電界発光層53においても電子及び正孔が再結合して電子・正孔対が生成され、それが基底状態に遷移することで所定波長域の光(第1電界発光層34と同色の光)が放出される。例えば、赤色電界発光素子10Rの第1電界発光層34R及び第2電界発光層53Rは、それぞれ赤色の光を放出する。同様に、緑色電界発光素子10Gの第1電界発光層34G及び第2電界発光層53Gはそれぞれ緑色の光を放出し、青色電界発光素子10Bの第1電界発光層34B及び第2電界発光層53Bはそれぞれ青色の光を放出する。 As a result, electrons and holes recombine in the first electroluminescent layer 34 to generate electron-hole pairs (also called excitons), which transition to the ground state to emit light in a predetermined wavelength range. Similarly, electrons and holes recombine in the second electroluminescent layer 53 to generate electron-hole pairs, which transition to the ground state to emit light in a predetermined wavelength range (light of the same color as the first electroluminescent layer 34). For example, the first electroluminescent layer 34R and the second electroluminescent layer 53R of the red electroluminescent element 10R each emit red light. Similarly, the first electroluminescent layer 34G and the second electroluminescent layer 53G of the green electroluminescent element 10G each emit green light, and the first electroluminescent layer 34B and the second electroluminescent layer 53B of the blue electroluminescent element 10B each emit blue light.

 このとき、第1電界発光層34及び第2電界発光層53は、いずれも理論値と実質的に同等な発光効率で発光し得る。よって、積層方向に複数配置された同色の発光層のいずれもが実質的に理論値と同等に発光し、高輝度かつ高精細なフルカラー画像の形成に供される。 At this time, the first electroluminescent layer 34 and the second electroluminescent layer 53 can both emit light with a luminous efficiency substantially equal to the theoretical value. Therefore, each of the multiple light-emitting layers of the same color arranged in the stacking direction emits light substantially equal to the theoretical value, contributing to the formation of a high-brightness, high-definition full-color image.

 しかし、本開示で説明したような電界発光層の構成をとらない従来の電界発光素子、すなわち、同色に発光するホスト・ゲスト系の電界発光層を同じ厚みで2層積層した従来のタンデム構造の電界発光素子の発光量は、単層の電界発光層を有する電界発光素子の発光量の2倍(すなわち理論値)に届かないことがある。 However, the amount of light emitted by a conventional electroluminescent element that does not have the electroluminescent layer configuration described in this disclosure, i.e., a conventional tandem-structure electroluminescent element in which two host-guest electroluminescent layers that emit light of the same color are stacked to the same thickness, may not reach twice the amount of light emitted by an electroluminescent element having a single electroluminescent layer (i.e., the theoretical value).

 ここで、本発明者らによる検証の結果を紹介する。まず、青色電界発光層が一層(又は単層とも言う;シングル構造)の電界発光素子(シングル試作品)と、上記の青色電界発光層が二層のタンデム構造の電界発光素子(比較用タンデム試作品)とを試作した。シングル試作品は下記の条件で製造されている。比較用タンデム試作品は、下記条件iから条件iiiの3種類の条件で製造されている。シングル試作品は、陰極層と陽極層との間に、条件iの第1スタックと同じ層構成を有している。比較用タンデム試作品は、積層方向に積層される各電界発光層の厚みを同一、つまり従来型のタンデム構造を有する電界発光素子とした。そして、各試作品について、素子寿命及び駆動電圧を測定し、Blue Index(単位:cd/A/y、yはCIE1931における色度座標の一方)を用いて電流効率を求めた。
 (シングル試作品)
 層構成:陰極層/第1スタック(電子輸送層/正孔ブロック層/第1青色電界発光層(厚み:15nm)/電子ブロック層/正孔輸送層/正孔注入層)/陽極層
 厚みの比:第1スタック厚(165nm)に対する第1電界発光層の厚み(15nm)の比は0.091。
 (条件i)
 層構成:陰極層/第2スタック(電子注入層/電子輸送層/正孔ブロック層/第2青色電界発光層(厚み:15nm)/正孔輸送層/正孔注入層)/電荷生成層/第1スタック(電子輸送層/正孔ブロック層/第1青色電界発光層(厚み:15nm)/電子ブロック層/正孔輸送層/正孔注入層)/陽極層
 厚みの比:第2スタック厚(70nm)に対する第2電界発光層の厚み(15nm)の比は0.21、第1スタック厚(165nm)に対する第1電界発光層の厚み(15nm)の比は0.091。
 (条件ii)
 層構成:条件iと同じ。
 厚みの比:第2スタック層内のキャリア機能層の厚みを調整してトータルの厚みを80nmとしたこと以外は、条件iと同じ。第2スタック層の厚み(80nm)に対する第2電界発光層の厚み(15nm)の比は0.188。
 (条件iii)
 層構成:条件iと同じ。
 厚みの比:第2スタック層内のキャリア機能層の厚みを調整してトータルの厚みを90nmとしたこと以外は、条件iと同じ。第2スタック層の厚み(90nm)に対する第2電界発光層の厚み(15nm)の比は0.167。
Here, the results of the verification by the present inventors are introduced. First, an electroluminescent device (single prototype) having one layer of blue electroluminescent layer (also called single layer; single structure) and an electroluminescent device (comparative tandem prototype) having two layers of blue electroluminescent layer in a tandem structure were fabricated. The single prototype was manufactured under the following conditions. The comparative tandem prototype was manufactured under three conditions, i.e., condition i to condition iii, below. The single prototype has the same layer structure as the first stack under condition i between the cathode layer and the anode layer. The comparative tandem prototype is an electroluminescent device having the same thickness of each electroluminescent layer stacked in the stacking direction, that is, a conventional tandem structure. Then, the element life and driving voltage were measured for each prototype, and the current efficiency was calculated using the Blue Index (unit: cd/A/y, y is one of the chromaticity coordinates in CIE1931).
(Single prototype)
Layer configuration: cathode layer/first stack (electron transport layer/hole blocking layer/first blue electroluminescent layer (thickness: 15 nm)/electron blocking layer/hole transport layer/hole injection layer)/anode layer. Thickness ratio: the ratio of the first electroluminescent layer thickness (15 nm) to the first stack thickness (165 nm) is 0.091.
(Condition i)
Layer configuration: cathode layer/second stack (electron injection layer/electron transport layer/hole blocking layer/second blue electroluminescent layer (thickness: 15 nm)/hole transport layer/hole injection layer)/charge generation layer/first stack (electron transport layer/hole blocking layer/first blue electroluminescent layer (thickness: 15 nm)/electron blocking layer/hole transport layer/hole injection layer)/anode layer. Thickness ratio: the ratio of the second electroluminescent layer thickness (15 nm) to the second stack thickness (70 nm) is 0.21, and the ratio of the first electroluminescent layer thickness (15 nm) to the first stack thickness (165 nm) is 0.091.
(Condition ii)
Layer structure: same as condition i.
Thickness ratio: Same as condition i, except that the thickness of the carrier functional layer in the second stack layer was adjusted to a total thickness of 80 nm. The ratio of the thickness of the second electroluminescent layer (15 nm) to the thickness of the second stack layer (80 nm) was 0.188.
(Condition iii)
Layer structure: same as condition i.
Thickness ratio: Same as condition i, except that the thickness of the carrier functional layer in the second stack layer was adjusted to a total thickness of 90 nm. The ratio of the thickness of the second electroluminescent layer (15 nm) to the thickness of the second stack layer (90 nm) was 0.167.

 その結果、シングル試作品の電流効率は206cd/A/yであった。これに対し、比較用タンデム試作品の電流効率は、(条件i)305cd/A/y(対シングル試作品で電流効率が1.48倍)、(条件ii)320cd/A/y(同1.55倍)及び(条件iii)219cd/A/y(同1.1倍)であった。また、素子寿命を測定したところ、比較用タンデム試作品の素子寿命は、シングル試作品のそれに対して、(条件i)2.01倍、(条件ii)2.12倍、及び(条件iii)1.92倍であった。さらに、駆動電圧を測定したところ、比較用タンデム試作品の駆動電圧は、シングル試作品のそれに対して、(条件i)1.9倍、(条件ii)1.9倍、及び(条件iii)2.0倍であった。 As a result, the current efficiency of the single prototype was 206 cd/A/y. In contrast, the current efficiency of the comparative tandem prototype was (condition i) 305 cd/A/y (current efficiency 1.48 times that of the single prototype), (condition ii) 320 cd/A/y (same 1.55 times), and (condition iii) 219 cd/A/y (same 1.1 times). In addition, when the element life was measured, the element life of the comparative tandem prototype was 2.01 times that of the single prototype (condition i), 2.12 times that of the single prototype (condition ii), and 1.92 times that of the single prototype (condition iii). In addition, when the driving voltage was measured, the driving voltage of the comparative tandem prototype was 1.9 times that of the single prototype (condition i), 1.9 times that of the single prototype (condition ii), and 2.0 times that of the single prototype (condition iii).

 上述の結果から、電界発光層の厚みはそれぞれ同一であって電界発光層以外のキャリア機能層の条件を変更した従来型の二層の電界発光層を備えたタンデム構造の電界発光素子は、いずれも、単層の電界発光層を備えたシングル構造の電界発光素子に比べて、素子寿命が約2倍前後に改善されることが分かる。その一方で、従来型の二層の同一の厚みを有する電界発光層を備えたタンデム構造の電界発光素子は、シングル構造の電界発光素子に比べて駆動電圧の上昇分に比べて電流効率の上昇分が少なく、キャリア機能層の条件を変更しても、駆動電圧が約2倍になっているにもかかわらず、発光効率はシングル構造の電界発光素子の2倍には大きく届かないことがあることが分かる。 From the above results, it can be seen that the life span of electroluminescent devices with a tandem structure having two conventional electroluminescent layers in which the thickness of the electroluminescent layers is the same and the conditions of the carrier functional layers other than the electroluminescent layer are changed is improved by about twice as much as that of electroluminescent devices with a single structure having a single electroluminescent layer. On the other hand, electroluminescent devices with a tandem structure having two conventional electroluminescent layers of the same thickness have a smaller increase in current efficiency compared to the increase in driving voltage compared to electroluminescent devices with a single structure, and even if the conditions of the carrier functional layer are changed, it can be seen that the luminous efficiency does not reach twice that of electroluminescent devices with a single structure by a large margin, even though the driving voltage is about twice as high.

 これらの結果に基づくと、従来型の二層の電界発光層(タンデム構造)を有する電界発光素子の発光効率をシングル構造の電界発光素子(すなわち、単層の電界発光層を有する電界発光素子)のそれの2倍にするための対策には、より高い駆動電圧を印加し、より多くの電流を供給することが考えられるが、その結果、消費電力の上昇及び素子寿命の低下を来すことは明らかである。すなわち、従来構造ではタンデム構造を採用することの長所を十分に発現させるには検討の余地が残されていることが分かる。これに関する本発明者らの検討によれば、以下の理由が考えられる。 Based on these results, one possible measure to double the luminous efficiency of an electroluminescent device having a conventional two-layer electroluminescent layer (tandem structure) compared to an electroluminescent device having a single structure (i.e., an electroluminescent device having a single electroluminescent layer) would be to apply a higher driving voltage and supply more current, but it is clear that this would result in increased power consumption and a shortened device life. In other words, it can be seen that there is still room for improvement in order to fully realize the advantages of adopting a tandem structure in the conventional structure. According to the inventors' investigations into this matter, the following reasons are considered.

 有機材料では、一般に正孔の移動度は電子の移動度よりも高いことが多いが、電子輸送層と正孔輸送層の材料選択次第では、逆に、電子の移動度の方が正孔の移動度より高くなることもある。また、電極層からのキャリア(電子及び正孔)の注入性についても、陰極層材料と電子注入層材料の組み合わせ、及び、陽極層材料と正孔注入層材料の組み合わせ次第で、電子の移動度の方が正孔の移動度より高くなることもある。即ち、発光に寄与する励起子の生成は電界発光層内に供給された電子と正孔との再結合によるが、材料選択によって、励起子生成の律速となるキャリアが電子になるのか正孔になるのか、が変化する。単層の電界発光層を有する従来の電界発光素子では、電界発光層以外のこれらのキャリア機能層の材料選択又はキャリア機能層の厚みを最適化することにより、電界発光層におけるキャリア供給量を一致させること、即ちキャリアバランスをとる工夫がなされている。 In organic materials, the mobility of holes is generally higher than that of electrons, but depending on the material selection of the electron transport layer and the hole transport layer, the mobility of electrons may be higher than that of holes. In addition, the mobility of electrons may be higher than that of holes in terms of the injection of carriers (electrons and holes) from the electrode layer, depending on the combination of the cathode layer material and the electron injection layer material, and the combination of the anode layer material and the hole injection layer material. In other words, the generation of excitons that contribute to light emission is due to the recombination of electrons and holes supplied to the electroluminescent layer, but the carrier that is the rate-limiting factor for the generation of excitons changes whether it is electrons or holes depending on the material selection. In conventional electroluminescent elements having a single electroluminescent layer, the amount of carriers supplied to the electroluminescent layer is matched, that is, carrier balance is achieved by optimizing the material selection of these carrier functional layers other than the electroluminescent layer or the thickness of the carrier functional layer.

 しかし、複数の電界発光層(タンデム構造)を有する電界発光素子では、通常、積層方向において電荷生成層と、それを介して隣り合う複数の電界発光層とがさらに存在する。このとき、電荷生成層が生成する電子及び正孔のバランスは、1:1ではないことがある。よって、電荷生成層からのキャリア注入性についても、n型電荷生成層に対する電子注入層及び電子輸送層の組み合わせ、あるいはp型電荷生成層に対する正孔注入層及び正孔輸送層の組み合わせ次第で、律速となるキャリア及びその律速の程度が異なり得る。 However, in an electroluminescent element having multiple electroluminescent layers (tandem structure), there is usually a charge generation layer and multiple adjacent electroluminescent layers interposed therebetween in the stacking direction. In this case, the balance of electrons and holes generated by the charge generation layer may not be 1:1. Therefore, the carriers that become rate-limiting and the degree of rate-limiting may differ for carrier injection from the charge generation layer depending on the combination of an electron injection layer and an electron transport layer for an n-type charge generation layer, or the combination of a hole injection layer and a hole transport layer for a p-type charge generation layer.

 従来、この複数の電界発光層(タンデム構造)を有する電界発光素子における個々の電界発光層のキャリアバランスの課題に対しては、単層の電界発光層を有する電界発光素子と同様の対策、すなわち、上述したような電界発光層以外の電界発光層周辺のキャリア機能層の最適化による取り組みがなされてきた。しかし、上述した検証結果で示された通り、その効果はまだ十分とは言えない場合がある。さらに、従来の同一の厚みを有する二層の電界発光層を備えたタンデム構造の電界発光素子の発光量が単層の電界発光層を有する電界発光素子の発光量の2倍に届かないことがある、という新たな課題の対策については検討の余地が残されている。  Conventionally, the problem of the carrier balance of each electroluminescent layer in an electroluminescent device having multiple electroluminescent layers (tandem structure) has been addressed by the same measures as in electroluminescent devices having a single electroluminescent layer, that is, by optimizing the carrier functional layer around the electroluminescent layer other than the electroluminescent layer as described above. However, as shown by the above-mentioned verification results, the effect is still not sufficient in some cases. Furthermore, there is still room for consideration in terms of measures to address the new problem that the amount of light emitted by a conventional electroluminescent device having a tandem structure with two electroluminescent layers having the same thickness may not reach twice the amount of light emitted by an electroluminescent device having a single electroluminescent layer.

 この課題に対して、本発明者らは、タンデム構造を有する電界発光素子では、複数の電界発光層のそれぞれにおいての電子と正孔の供給量、すなわちキャリアバランスを一致させることに加えて、単層の電界発光層を有する電界発光素子では考慮する必要が無かった各電界発光層間におけるキャリアバランスやキャリア供給量を考慮する必要があることを見出すと共に、従来の複数の電界発光層(タンデム構造)を有する電界発光素子では、いずれかの電界発光層で発生する余剰なキャリア(電子又は正孔)が、電界発光素子の電流効率が2倍にならない原因になることがあることを見出した。そして、タンデム構造の電界発光素子の発光量を単層の電界発光層を有する電界発光素子の実質的に2倍にするためには、一つの電界発光層に対する電子と正孔との供給バランスを取るだけでなく、複数の電界発光層それぞれ、及びその間でのキャリアバランスを取る必要があることが有効な対策となり得ることを見出した。 In response to this problem, the present inventors have found that in an electroluminescent device having a tandem structure, in addition to matching the supply amounts of electrons and holes in each of the multiple electroluminescent layers, i.e., the carrier balance, it is necessary to consider the carrier balance and carrier supply amount between each electroluminescent layer, which did not need to be considered in an electroluminescent device having a single electroluminescent layer, and that in a conventional electroluminescent device having multiple electroluminescent layers (tandem structure), excess carriers (electrons or holes) generated in one of the electroluminescent layers can be a cause of the current efficiency of the electroluminescent device not being doubled. And, in order to make the amount of light emitted by an electroluminescent device having a tandem structure substantially twice that of an electroluminescent device having a single electroluminescent layer, it has been found that it can be an effective measure to not only balance the supply of electrons and holes to one electroluminescent layer, but also to balance the carriers in each of the multiple electroluminescent layers and between them.

 本発明者らは、複数の電界発光層を備えたタンデム構造を有する電界発光素子に対して、本開示のように各々の電界発光層自体の構成(厚み)を変えることで、複数の電界発光層間のキャリアバランスを取り、かつ、キャリア供給量の不均衡の問題を解決するという新しい設計思想を導入している。これにより、従来のタンデム構造の電界発光素子における余剰なキャリアを発生させずに、積層方向におけるそれぞれの電界発光層において適切な量とバランスの励起子を生成させることを本開示において可能としている。その結果、本開示では、消費電流と駆動電圧との低減、及び発光効率の向上、を果たすことができるタンデム構造を備えた電界発光装置が実現される。 The inventors have introduced a new design concept to an electroluminescent device having a tandem structure with multiple electroluminescent layers, in which the configuration (thickness) of each electroluminescent layer itself is changed as in the present disclosure, thereby achieving carrier balance between the multiple electroluminescent layers and solving the problem of imbalance in carrier supply. As a result, the present disclosure makes it possible to generate an appropriate amount and balance of excitons in each electroluminescent layer in the stacking direction without generating excess carriers as in conventional electroluminescent devices with a tandem structure. As a result, the present disclosure realizes an electroluminescent device with a tandem structure that can reduce current consumption and driving voltage and improve luminous efficiency.

 具体的には、陰極層側からの電子注入性が陽極層側からの正孔注入性よりも劣る場合、及び/又は、p型電荷生成層からの正孔注入性がn型電荷生成層からの電子注入性よりも劣る場合では、陰極側層に形成された電界発光層での励起子生成量が少なくなる。このような場合としては、より具体的には、陰極層からの電子注入量が陽極層からの正孔注入量より少ない場合、及び/又はp型電荷生成層からの正孔注入量がn型電荷生成層からの電子注入量より少ない場合、が挙げられる。あるいは、上記の場合としては、陰極層からの電子注入性とp型電荷生成層からの正孔注入性との差の方が、陽極層からの正孔注入性とn型電荷生成層からの電子注入性との差よりも大きい場合、すなわち、陰極側に形成する電界発光層における電子注入量と正孔注入量との差の方が、陽極側に形成する電界発光層における電子注入量と正孔注入量との差よりも大きい場合、が挙げられる。したがって、陰極層側に形成する電界発光層の厚みを薄くする。この場合、積層方向において、陽極層側の電界発光層に対する陰極層側の電界発光層の厚みの比率が4/15より大きく2/3より小さくなるように、陰極層側の電界発光層を形成する。より好ましくは、陽極層側の電界発光層の厚みに対する陰極層側の電界発光層の厚みの比率は、1/3以上1/2以下である。 Specifically, when the electron injection from the cathode layer side is inferior to the hole injection from the anode layer side, and/or when the hole injection from the p-type charge generation layer is inferior to the electron injection from the n-type charge generation layer, the amount of excitons generated in the electroluminescent layer formed on the cathode side layer is small. More specifically, examples of such cases include cases where the amount of electron injection from the cathode layer is smaller than the amount of hole injection from the anode layer, and/or cases where the amount of hole injection from the p-type charge generation layer is smaller than the amount of electron injection from the n-type charge generation layer. Alternatively, examples of the above cases include cases where the difference between the electron injection from the cathode layer and the hole injection from the p-type charge generation layer is larger than the difference between the hole injection from the anode layer and the electron injection from the n-type charge generation layer, that is, cases where the difference between the electron injection amount and the hole injection amount in the electroluminescent layer formed on the cathode side is larger than the difference between the electron injection amount and the hole injection amount in the electroluminescent layer formed on the anode side. Therefore, the thickness of the electroluminescent layer formed on the cathode layer side is made thinner. In this case, the electroluminescent layer on the cathode layer side is formed so that the ratio of the thickness of the electroluminescent layer on the cathode layer side to the thickness of the electroluminescent layer on the anode layer side in the stacking direction is greater than 4/15 and less than 2/3. More preferably, the ratio of the thickness of the electroluminescent layer on the cathode layer side to the thickness of the electroluminescent layer on the anode layer side is greater than 1/3 and less than 1/2.

 逆に、陽極層側からの正孔注入性が陰極層側からの電子注入性よりも劣る場合、及び/又は、n型電荷生成層からの電子注入性がp型電荷生成層からの正孔注入性よりも劣る場合には、陽極層側に形成された電界発光層での励起子生成量が少なくなる。このような場合としては、より具体的には、陰極層からの電子注入量が陽極層からの正孔注入量より多い場合、及び/又はp型電荷生成層からの正孔注入量がn型電荷生成層からの電子注入量より多い場合、が挙げられる。あるいは、上記の場合としては、陽極層からの正孔注入性とn型第荷生成層からの電子注入性との差の方が、陰極層からの電子注入性とp型電荷生成層からの正孔注入性との差よりも大きい場合、すなわち、陽極側に形成した電界発光層における電子注入量と正孔注入量との差の方が、陰極側に形成した電界発光層における電子注入量と正孔注入量との差よりも大きい場合、が挙げられる。したがって、陽極層側に形成する電界発光層の厚みを薄くする。この場合、積層方向において、陰極層側の電界発光層に対する陽極層側の電界発光層の厚みの比率が4/15より大きく2/3より小さくなるように、陽極層側の電界発光層を形成する。より好ましくは、陰極層側の電界発光層の厚みに対する陽極層側の電界発光層の厚みの比率は、1/3以上1/2以下である。 Conversely, if the hole injection from the anode layer side is inferior to the electron injection from the cathode layer side, and/or if the electron injection from the n-type charge generation layer is inferior to the hole injection from the p-type charge generation layer, the amount of excitons generated in the electroluminescent layer formed on the anode layer side is small. More specifically, examples of such cases include cases where the amount of electron injection from the cathode layer is greater than the amount of hole injection from the anode layer, and/or cases where the amount of hole injection from the p-type charge generation layer is greater than the amount of electron injection from the n-type charge generation layer. Alternatively, examples of the above cases include cases where the difference between the hole injection from the anode layer and the electron injection from the n-type charge generation layer is greater than the difference between the electron injection from the cathode layer and the hole injection from the p-type charge generation layer, that is, cases where the difference between the electron injection amount and the hole injection amount in the electroluminescent layer formed on the anode side is greater than the difference between the electron injection amount and the hole injection amount in the electroluminescent layer formed on the cathode side. Therefore, the thickness of the electroluminescent layer formed on the anode layer side is made thinner. In this case, the electroluminescent layer on the anode layer side is formed so that the ratio of the thickness of the electroluminescent layer on the anode layer side to the thickness of the electroluminescent layer on the cathode layer side in the stacking direction is greater than 4/15 and less than 2/3. More preferably, the ratio of the thickness of the electroluminescent layer on the anode layer side to the thickness of the electroluminescent layer on the cathode layer side is greater than 1/3 and less than 1/2.

 なお、特に、電界発光素子が陰極層側から発光を取り出すトップエミッション型の構成の場合、陰極層上に形成される封止層にわずかでも欠陥があると、酸素又は水分の浸入により陰極層が劣化して電子注入性が低下し、結果として陰極層直下の電界発光層に対する電子供給量が少なくなってしまうことがある。しかし、このような場合を想定して、当初設計の段階から陰極層側の電界発光層の厚みを理論値よりも薄く形成しておくことによって、陰極層側の電界発光層における余剰の正孔の発生を防止することができる。この場合、陽極層側の電界発光層の厚みは、理論上の厚みより薄くした陰極層側の電界発光層の厚みに対して特定の比率となるように形成されてもよい。 In particular, when the electroluminescent element has a top-emission configuration in which light is extracted from the cathode layer side, even the slightest defect in the sealing layer formed on the cathode layer can cause the cathode layer to deteriorate due to the intrusion of oxygen or moisture, reducing the electron injection properties, and as a result, the amount of electrons supplied to the electroluminescent layer directly below the cathode layer can be reduced. However, by anticipating such a case and forming the thickness of the electroluminescent layer on the cathode layer side thinner than the theoretical value from the initial design stage, it is possible to prevent the generation of excess holes in the electroluminescent layer on the cathode layer side. In this case, the thickness of the electroluminescent layer on the anode layer side may be formed to be a specific ratio to the thickness of the electroluminescent layer on the cathode layer side thinner than the theoretical thickness.

 本開示では、積層方向におけるキャリアの移動度、及び、キャリアの注入性について着目し、さらに、積層方向におけるそれぞれの電界発光層内でのキャリアの供給量、及び余剰キャリアの発生量にも着目している。実施形態1の電界発光装置では、陽極層側に形成される電界発光層よりも、陰極層側に形成される電界発光層の厚みを薄くしている。その結果、陰極層側の電界発光層に、当該電界発光層の厚さに見合ったキャリア(電子と正孔)が供給される。そのため、余剰キャリアの発生なしに励起子が生成され、かつ陽極側の電界発光層では、実質的に理論値の通りの量の励起子が生成される。よって、積層方向に重なるいずれの電界発光層も、その厚みに応じた輝度で発光する。さらに、積層方向に重なるいずれの電界発光層においても、余剰キャリアの発生を防止することができるため、消費電流の低減が実現され、よって消費電力の低減も実現できる。 In this disclosure, attention is paid to the mobility of carriers in the stacking direction and the injection property of carriers, and further to the supply amount of carriers and the generation amount of excess carriers in each electroluminescent layer in the stacking direction. In the electroluminescent device of embodiment 1, the thickness of the electroluminescent layer formed on the cathode layer side is made thinner than that of the electroluminescent layer formed on the anode layer side. As a result, carriers (electrons and holes) corresponding to the thickness of the electroluminescent layer are supplied to the electroluminescent layer on the cathode layer side. Therefore, excitons are generated without the generation of excess carriers, and the amount of excitons generated in the electroluminescent layer on the anode side is substantially the same as the theoretical value. Therefore, each electroluminescent layer overlapping in the stacking direction emits light with a brightness according to its thickness. Furthermore, since the generation of excess carriers can be prevented in each electroluminescent layer overlapping in the stacking direction, a reduction in current consumption is realized, and therefore a reduction in power consumption can also be realized.

 ここで、積層方向に二層の電界発光層(タンデム構造)を有するフルカラー電界発光装置について、本開示における実施例と比較例とのシミュレーションによる評価を説明する。当該電界発光装置の条件は、陰極層側の電界発光層の厚みを赤色電界発光素子及び緑色電界発光素子で17nm、青色電界発光素子で7nmとし、陽極層側の電界発光層の厚みを赤色及び緑色電界発光素子で35nm、青色電界発光素子で15nmとした。 Here, we will explain the evaluation by simulation of the examples and comparative examples of the present disclosure for a full-color electroluminescent device having two electroluminescent layers (tandem structure) in the stacking direction. The conditions for the electroluminescent device are that the thickness of the electroluminescent layer on the cathode layer side is 17 nm for the red and green electroluminescent elements and 7 nm for the blue electroluminescent element, and that the thickness of the electroluminescent layer on the anode layer side is 35 nm for the red and green electroluminescent elements and 15 nm for the blue electroluminescent element.

 実施例の電界発光装置は、本実施形態の層構成を有する。陽極側電界発光層の厚みに対する陰極側電界発光層の厚みの比率は、赤色電界発光層及び緑色電界発光層のそれぞれで0.49、青色電界発光層で0.47である。また各色の各スタックの厚みは67nm~255nmで60nm以上260nm以下の範囲内であり、各スタックにおけるスタックの厚みに対する電界発光層の厚みの比率は、0.10~0.13の範囲内である。比較例の電界発光装置の各層は、上記の陽極層側のスタックの各層と同じ厚みを有し、かつ各色が単層の電界発光層を有する(タンデム構造ではない)フルカラー電界発光装置である。 The electroluminescent device of the example has the layer structure of this embodiment. The ratio of the thickness of the cathode-side electroluminescent layer to the thickness of the anode-side electroluminescent layer is 0.49 for the red and green electroluminescent layers, and 0.47 for the blue electroluminescent layer. The thickness of each stack of each color is 67 nm to 255 nm, in the range of 60 nm to 260 nm, and the ratio of the thickness of the electroluminescent layer to the thickness of the stack in each stack is in the range of 0.10 to 0.13. Each layer of the electroluminescent device of the comparative example has the same thickness as each layer of the stack on the anode layer side described above, and is a full-color electroluminescent device in which each color has a single electroluminescent layer (not a tandem structure).

 上記の条件によるシミュレーションの結果によれば、上記の実施例のフルカラー電界発光装置における電流効率(「発光効率」とも言える)は、上記の比較例のフルカラー電界発光装置のそれに比べて1.6倍であり、素子寿命は2.6倍であり、駆動電圧は1.6倍であった。この結果から、上記の実施例の電界発光素子は、駆動電圧の上昇分に見合う発光効率の向上を果たすことが分かる。したがって、本開示のタンデム構造を備えた電界発光装置によれば、従来のタンデム構造を有するフルカラー電界発光装置に比べて、駆動電圧の上昇を抑制できるとともに素子寿命を延ばすことができ、かつ、駆動電圧の上昇分に見合う発光効率の向上を果たせることが分かる。 According to the results of a simulation under the above conditions, the current efficiency (also called "luminous efficiency") of the full-color electroluminescent device of the above example was 1.6 times that of the full-color electroluminescent device of the above comparative example, the element life was 2.6 times, and the driving voltage was 1.6 times. From these results, it can be seen that the electroluminescent element of the above example achieves an improvement in luminous efficiency commensurate with the increase in driving voltage. Therefore, it can be seen that the electroluminescent device having the tandem structure disclosed herein can suppress an increase in driving voltage and extend the element life, as well as achieve an improvement in luminous efficiency commensurate with the increase in driving voltage, compared to a full-color electroluminescent device having a conventional tandem structure.

 さらに、上記の実施例のシミュレーションにおける条件において、電流効率(発光効率)をさらに向上させるべく駆動電圧をさらに上昇させたところ、駆動電圧2倍で電流効率も2倍となり、さらにその条件における素子寿命は2.5倍となった。すなわち、本開示に係る積層方向に二層の電界発光層(タンデム構造)を有するフルカラー電界発光装置は、単層フルカラー電界発光装置の2倍以上の特性を実現できることが分かる。 Furthermore, when the driving voltage was further increased to further improve the current efficiency (luminous efficiency) under the conditions in the simulation of the above example, the current efficiency also doubled when the driving voltage was doubled, and furthermore, the element life under those conditions became 2.5 times longer. In other words, it can be seen that the full-color electroluminescent device having two electroluminescent layers (tandem structure) in the stacking direction according to the present disclosure can achieve characteristics more than twice those of a single-layer full-color electroluminescent device.

 また、青色電界発光素子について上記の実施例と比較例とで比較すると、上記実施例における電界発光装置の電流効率は、上記比較例における電界発光装置のそれに対して12.0%増加しており、素子寿命は13.5%増加しており、そして駆動電圧は12.1%減少している。この結果から明らかなように、本実施形態の電界発光装置によれば、大幅な特性向上を実現できることが分かる。また、本実施形態の電界発光装置によれば、従来の同一の厚みの電界発光層を複数備えたタンデム構造を有する電界発光装置に比べてゲスト化合物(ドーパント)の使用量を削減できるという効果も奏する。 In addition, when comparing the blue electroluminescent device in the above Example with the Comparative Example, the current efficiency of the electroluminescent device in the above Example is increased by 12.0% compared to that of the electroluminescent device in the Comparative Example, the device life is increased by 13.5%, and the driving voltage is decreased by 12.1%. As is clear from these results, the electroluminescent device of this embodiment can achieve a significant improvement in characteristics. In addition, the electroluminescent device of this embodiment also has the effect of reducing the amount of guest compound (dopant) used compared to conventional electroluminescent devices having a tandem structure with multiple electroluminescent layers of the same thickness.

 [実施形態2]
 本開示の実施形態2について、図6を参照して以下に説明する。図6は、本開示の実施形態2に係る電界発光装置13Aの電界発光素子10Aの発光メカニズムを説明するための図である。本実施形態2に係る電界発光装置13Aは、上述した電界発光装置13と比較して、積層方向に3つの電界発光層を有する電界発光素子10Aを含む点で異なる。
[Embodiment 2]
The second embodiment of the present disclosure will be described below with reference to Fig. 6. Fig. 6 is a diagram for explaining the light emission mechanism of the electroluminescent element 10A of the electroluminescent device 13A according to the second embodiment of the present disclosure. The electroluminescent device 13A according to the second embodiment is different from the electroluminescent device 13 described above in that it includes the electroluminescent element 10A having three electroluminescent layers in the stacking direction.

 なお、図6において、電界発光装置13Aに含まれる電界発光素子10Aの要部構成のみが示されている。なお、以下の実施形態の説明において、説明の便宜上、前述した実施形態における説明と同じ説明については、その説明を繰り返さず、前述した実施形態にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。 In FIG. 6, only the essential configuration of the electroluminescent element 10A included in the electroluminescent device 13A is shown. In the following description of the embodiment, for the sake of convenience, the same explanation as in the above-described embodiment will not be repeated, and the same reference numerals will be used for components having the same functions as those described in the above-described embodiment, and the explanation will not be repeated.

 図6に示すように、赤色電界発光素子10ARでは、陰極層22Rと第2電界発光層53Rとの間に、第3電界発光層71R及び第2電荷生成層80Rが更に配置されている。赤色電界発光素子10ARでは、積層方向における第1電荷生成層40Rと第2電荷生成層80Rとの間に配置される、第2電界発光層53Rを含む層の集合50Rが第2スタックである。そして、第2電荷生成層80Rと陰極層22Rとの間に配置される、第3電界発光層71Rを含む層の集合70Rが第3スタックである。 As shown in FIG. 6, in the red electroluminescent element 10AR, a third electroluminescent layer 71R and a second charge generation layer 80R are further disposed between the cathode layer 22R and the second electroluminescent layer 53R. In the red electroluminescent element 10AR, the set of layers 50R including the second electroluminescent layer 53R, which is disposed between the first charge generation layer 40R and the second charge generation layer 80R in the stacking direction, is the second stack. And the set of layers 70R including the third electroluminescent layer 71R, which is disposed between the second charge generation layer 80R and the cathode layer 22R, is the third stack.

 同様に、緑色電界発光素子10AGでは、陰極層22Gと第2電界発光層53Gとの間に、第3電界発光層71G及び第2電荷生成層80Gが更に配置されている。緑色電界発光素子10AGでも、積層方向における第1電荷生成層40Gと第2電荷生成層80Gとの間に配置される、第2電界発光層53Gを含む層の集合50Gが第2スタックである。そして、第2電荷生成層80Gと陰極層22Gとの間に配置される、第3電界発光層71Gを含む層の集合70Gが第3スタックである。 Similarly, in the green electroluminescent element 10AG, a third electroluminescent layer 71G and a second charge generation layer 80G are further disposed between the cathode layer 22G and the second electroluminescent layer 53G. In the green electroluminescent element 10AG as well, the set of layers 50G including the second electroluminescent layer 53G, which is disposed between the first charge generation layer 40G and the second charge generation layer 80G in the stacking direction, is the second stack. And the set of layers 70G including the third electroluminescent layer 71G, which is disposed between the second charge generation layer 80G and the cathode layer 22G, is the third stack.

 また、青色電界発光素子10ABでは、陰極層22Bと第2電界発光層53Bとの間に、第3電界発光層71B及び第2電荷生成層80Bが更に配置されている。青色電界発光素子10ABでも、積層方向における第1電荷生成層40Bと第2電荷生成層80Bとの間に配置される、第2電界発光層53Bを含む層の集合50Bが第2スタックである。そして、第2電荷生成層80Bと陰極層22Bとの間に配置される、第3電界発光層71Bを含む層の集合70Bが第3スタックである。 In addition, in the blue electroluminescent element 10AB, a third electroluminescent layer 71B and a second charge generation layer 80B are further disposed between the cathode layer 22B and the second electroluminescent layer 53B. In the blue electroluminescent element 10AB as well, the set of layers 50B including the second electroluminescent layer 53B, which is disposed between the first charge generation layer 40B and the second charge generation layer 80B in the stacking direction, is the second stack. And the set of layers 70B including the third electroluminescent layer 71B, which is disposed between the second charge generation layer 80B and the cathode layer 22B, is the third stack.

 なお、各色の電界発光素子10R、10G及び10Bに含まれる各層の集合30R、30G及び30B、50R、50G及び50Bならびに、70R、70G及び70Bには、図示しないキャリア機能層(電子注入層、電子輸送層、正孔輸送層、正孔注入層等)が配置されている。また、以下の説明において、各色の電界発光素子10R、10G及び10に含まれる各第3電界発光層71R、71G、71Bの総称を「第3電界発光層71」とする。 In addition, the layers 30R, 30G and 30B, 50R, 50G and 50B, and 70R, 70G and 70B included in the electroluminescent elements 10R, 10G and 10B of each color have carrier function layers (electron injection layer, electron transport layer, hole transport layer, hole injection layer, etc.) arranged therein. In the following description, the third electroluminescent layers 71R, 71G, and 71B included in the electroluminescent elements 10R, 10G and 10 of each color are collectively referred to as the "third electroluminescent layer 71."

 積層方向において、第1電界発光層34の厚さを1としたとき、例えば第2電界発光層53の厚みは0.5であり、第3電界発光層71の厚みは0.3である。このように陽極側の電界発光層に対する陰極側の電界発光層の厚みの比率は4/15より大きく2/3より小さい。また各色の各スタックの厚みは60nm以上260nm以下の範囲内であり、各スタックにおけるスタックの厚みに対する電界発光層の厚みの比率は、0.05以上0.35以下の範囲内である。上記の範囲において、電界発光素子10Aに含まれる電界発光層34、53、71の厚みは陽極層21側でより厚く、陰極層22側でより薄くなっている。 In the stacking direction, when the thickness of the first electroluminescent layer 34 is 1, for example, the thickness of the second electroluminescent layer 53 is 0.5, and the thickness of the third electroluminescent layer 71 is 0.3. Thus, the ratio of the thickness of the electroluminescent layer on the cathode side to the electroluminescent layer on the anode side is greater than 4/15 and less than 2/3. Furthermore, the thickness of each stack of each color is in the range of 60 nm to 260 nm, and the ratio of the thickness of the electroluminescent layer to the thickness of the stack in each stack is in the range of 0.05 to 0.35. Within the above range, the thicknesses of the electroluminescent layers 34, 53, and 71 included in the electroluminescent element 10A are thicker on the anode layer 21 side and thinner on the cathode layer 22 side.

 また、図6においても、陰極層22は、赤色電界発光素子10R、緑色電界発光素子10G及び青色電界発光素子10Bに跨って設けられた共通の電極層であってもよい。同様に、封止層14も、赤色電界発光素子10R、緑色電界発光素子10G及び青色電界発光素子10Bに跨って設けられた共通の層であってもよい。 6, the cathode layer 22 may be a common electrode layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B. Similarly, the sealing layer 14 may be a common layer provided across the red electroluminescent element 10R, the green electroluminescent element 10G, and the blue electroluminescent element 10B.

 図6に示す、積層方向における電界発光層が三層である場合でも、図5に示した表示装置100と同様に、より陰極層側での電界発光層では余剰となるキャリア(電子又は正孔)の供給が防止され、いずれの電界発光層も、実質的に理論値どおりの輝度、及び発光効率で発光する。 Even when there are three electroluminescent layers in the stacking direction as shown in FIG. 6, the supply of excess carriers (electrons or holes) is prevented in the electroluminescent layers closer to the cathode layer, as in the display device 100 shown in FIG. 5, and each electroluminescent layer emits light with a brightness and luminous efficiency that is substantially the same as the theoretical values.

 [実施形態3]
 本開示の表示装置の実施形態3について、図7及び図8を参照して説明する。図7は、本開示の実施形態3に係る表示装置200の層構成を模式的に示す図である。図8は、図7に示す電界発光装置13Bの電界発光素子の発光メカニズムを説明するための図である。本実施形態に係る表示装置200に含まれる電界発光装置13Bは、上述した表示装置100と比較して、陰極層22側の第2電界発光層253の厚みをより厚くし、陽極層21側の第1電界発光層234をより薄くした電界発光素子210を含む電界発光装置13Bを含む点で異なる。なお、図7及び図8において、電界発光装置13Bに含まれる電界発光素子210の要部構成のみが示されている。
[Embodiment 3]
A display device according to a third embodiment of the present disclosure will be described with reference to Figs. 7 and 8. Fig. 7 is a diagram showing a layer structure of a display device 200 according to a third embodiment of the present disclosure. Fig. 8 is a diagram for explaining the light emission mechanism of the electroluminescent element of the electroluminescent device 13B shown in Fig. 7. The electroluminescent device 13B included in the display device 200 according to this embodiment is different from the display device 100 described above in that it includes an electroluminescent device 13B including an electroluminescent element 210 in which the thickness of the second electroluminescent layer 253 on the cathode layer 22 side is made thicker and the first electroluminescent layer 234 on the anode layer 21 side is made thinner. Note that Figs. 7 and 8 show only the main configuration of the electroluminescent element 210 included in the electroluminescent device 13B.

 図7に示すように、表示装置200に積層される電界発光装置13Bには、電界発光素子210が含まれる。電界発光素子210は、陽極層21と陰極層22との間に第1電界発光層234及び第2電界発光層253の二層の電界発光層が形成されたタンデム構造の有機EL素子である。なお、電界発光素子210には、赤色電界発光素子210R、緑色電界発光素子210G、及び青色電界発光素子210Bが含まれる。また、第1電界発光層234には、第1電界発光層234R、第1電界発光層234G、及び第1電界発光層234Bが含まれる。第2電界発光層253には、第2電界発光層253R、第2電界発光層253G、第2電界発光層253Bが含まれる。 As shown in FIG. 7, the electroluminescent device 13B laminated on the display device 200 includes an electroluminescent element 210. The electroluminescent element 210 is an organic EL element having a tandem structure in which two electroluminescent layers, a first electroluminescent layer 234 and a second electroluminescent layer 253, are formed between the anode layer 21 and the cathode layer 22. The electroluminescent element 210 includes a red electroluminescent element 210R, a green electroluminescent element 210G, and a blue electroluminescent element 210B. The first electroluminescent layer 234 includes a first electroluminescent layer 234R, a first electroluminescent layer 234G, and a first electroluminescent layer 234B. The second electroluminescent layer 253 includes a second electroluminescent layer 253R, a second electroluminescent layer 253G, and a second electroluminescent layer 253B.

 図8に示すように、第1電界発光層234と第2電界発光層253との間には第1電荷生成層40が配置されている。この第1電荷生成層40は、n型第1電荷生成層とp型第1電荷生成層とが積層された二層構造となっている。n型第1電荷生成層は、有機系の電子輸送材料であるオキサジアゾール系化合物に、有機系の電子供給材料であるBUPH1をドーピングした構成である。図7及び図8に示す例では、赤色電界発光素子210R、緑色電界発光素子210G及び青色電界発光素子210Bのそれぞれについて、同色の光を放出する第1電界発光層234及び第2電界発光層253が積層されている。 As shown in FIG. 8, a first charge generation layer 40 is disposed between the first electroluminescent layer 234 and the second electroluminescent layer 253. This first charge generation layer 40 has a two-layer structure in which an n-type first charge generation layer and a p-type first charge generation layer are laminated. The n-type first charge generation layer is configured by doping an oxadiazole compound, which is an organic electron transport material, with BUPH1, which is an organic electron supply material. In the example shown in FIG. 7 and FIG. 8, a first electroluminescent layer 234 and a second electroluminescent layer 253 that emit light of the same color are laminated for each of the red electroluminescent element 210R, the green electroluminescent element 210G, and the blue electroluminescent element 210B.

 より詳しくは、図8に示すように、赤色電界発光素子210Rでは、陽極層21R、第1電界発光層234R、第1電荷生成層40R、第2電界発光層253R、及び陰極層22Rが、この順に配置されている。赤色電界発光素子210Rにおいて、積層方向における陽極層21Rと第1電荷生成層40Rとの間に配置される、第1電界発光層234Rを含む層の集合230Rが第1スタックであり、第1電荷生成層40Rと陰極層22Rとの間に配置される、第2電界発光層253Rを含む層の集合250Rが第2スタックである。 More specifically, as shown in FIG. 8, in the red electroluminescent element 210R, the anode layer 21R, the first electroluminescent layer 234R, the first charge generation layer 40R, the second electroluminescent layer 253R, and the cathode layer 22R are arranged in this order. In the red electroluminescent element 210R, the set of layers 230R including the first electroluminescent layer 234R, which is arranged between the anode layer 21R and the first charge generation layer 40R in the stacking direction, is the first stack, and the set of layers 250R including the second electroluminescent layer 253R, which is arranged between the first charge generation layer 40R and the cathode layer 22R, is the second stack.

 同様に、緑色電界発光素子210Gでは、陽極層21G、第1電界発光層234G、第1電荷生成層40G、第2電界発光層253G、及び陰極層22Gが、この順に配置されている。緑色電界発光素子210Gにおける第1スタックは、積層方向における陽極層21Gと第1電荷生成層40Gとの間に配置される、第1電界発光層234Gを含む層の集合230Gである。緑色電界発光素子210Gにおける第2スタックは、第1電荷生成層40Gと陰極層22Gとの間に配置される、第2電界発光層253Gを含む層の集合250Gである。 Similarly, in the green electroluminescent element 210G, the anode layer 21G, the first electroluminescent layer 234G, the first charge generation layer 40G, the second electroluminescent layer 253G, and the cathode layer 22G are arranged in this order. The first stack in the green electroluminescent element 210G is a set of layers 230G including the first electroluminescent layer 234G, which is arranged between the anode layer 21G and the first charge generation layer 40G in the stacking direction. The second stack in the green electroluminescent element 210G is a set of layers 250G including the second electroluminescent layer 253G, which is arranged between the first charge generation layer 40G and the cathode layer 22G.

 また、青色電界発光素子210Bでは、陽極層21B、第1電界発光層234B、第1電荷生成層40B、第2電界発光層253B、及び陰極層22Bが、この順に積層されている。青色電界発光素子210Bにおける第1スタックは、積層方向における陽極層21Bと第1電荷生成層40Bとの間に配置される、第1電界発光層234Bを含む層の集合230Bである。青色電界発光素子210Bにおける第2スタックは、第1電荷生成層40Bと陰極層22Bとの間に配置される、第2電界発光層253Bを含む層の集合250Bである。 In addition, in the blue electroluminescent element 210B, the anode layer 21B, the first electroluminescent layer 234B, the first charge generation layer 40B, the second electroluminescent layer 253B, and the cathode layer 22B are stacked in this order. The first stack in the blue electroluminescent element 210B is a set of layers 230B including the first electroluminescent layer 234B, which is disposed between the anode layer 21B and the first charge generation layer 40B in the stacking direction. The second stack in the blue electroluminescent element 210B is a set of layers 250B including the second electroluminescent layer 253B, which is disposed between the first charge generation layer 40B and the cathode layer 22B.

 なお、各色の電界発光素子210R、210G、及び210Bに含まれる各層の集合230R、230G、230B、250R、250G、及び250Bには、図示しないキャリア機能層(電子注入層、電子輸送層、正孔輸送層、正孔注入層等)が配置されている。 In addition, the layer assemblies 230R, 230G, 230B, 250R, 250G, and 250B included in the electroluminescent elements 210R, 210G, and 210B of the respective colors have carrier functional layers (electron injection layer, electron transport layer, hole transport layer, hole injection layer, etc.) arranged therein.

 図7及び図8に示す本実施形態では、第2電界発光層253の厚みに対する第1電界発光層234の厚みの比率がいずれも4/15より大きく2/3より小さい。また各色の各スタックの厚みは50nm~350nmの範囲内であり、各スタックにおけるスタックの厚みに対する電界発光層の厚みの比率は、0.05以上0.35以下の範囲内である。 In the present embodiment shown in Figures 7 and 8, the ratio of the thickness of the first electroluminescent layer 234 to the thickness of the second electroluminescent layer 253 is greater than 4/15 and less than 2/3. The thickness of each stack of each color is in the range of 50 nm to 350 nm, and the ratio of the thickness of the electroluminescent layer to the thickness of the stack in each stack is in the range of 0.05 to 0.35.

 図7及び図8に示す本実施形態に基づいて、実施例及び比較例のシミュレーションの評価結果を以下に示す。本実施形態における実施例では、陰極層側の電界発光層の厚みを赤色電界発光素子及び緑色電界発光素子で35nm、青色電界発光素子で15nmとし、陽極層側の電界発光層の厚みを赤色及び緑色電界発光素子で18nm、青色電界発光素子で8nmとした。陰極側電界発光層の厚みに対する陽極側電界発光層の厚みの比率は、赤色電界発光層及び緑色電界発光層のそれぞれで0.34、青色電界発光層で0.33、であった。また各色の各スタックの厚みは100nm~240nmの範囲内であり、各スタックにおけるスタックの厚みに対する電界発光層の厚みの比率は、0.05~0.11の範囲内であった。本実施形態における比較例は、上記の陽極層側の厚みの条件を満たす各色の単層の電界発光層を有する電界発光装置、とした。 The results of simulation evaluation of the examples and comparative examples based on the present embodiment shown in Figures 7 and 8 are shown below. In the examples of this embodiment, the thickness of the electroluminescent layer on the cathode layer side was 35 nm for the red and green electroluminescent elements and 15 nm for the blue electroluminescent element, and the thickness of the electroluminescent layer on the anode layer side was 18 nm for the red and green electroluminescent elements and 8 nm for the blue electroluminescent element. The ratio of the thickness of the anode side electroluminescent layer to the thickness of the cathode side electroluminescent layer was 0.34 for the red and green electroluminescent layers, and 0.33 for the blue electroluminescent layer. The thickness of each stack of each color was in the range of 100 nm to 240 nm, and the ratio of the thickness of the electroluminescent layer to the thickness of the stack in each stack was in the range of 0.05 to 0.11. The comparative example in this embodiment was an electroluminescent device having a single electroluminescent layer of each color that satisfied the above-mentioned conditions for the thickness on the anode layer side.

 その結果、上記の本実施形態の実施例における電流効率(発光効率)は、本実施形態の比較例におけるそれに比べて1.6倍であり、発光寿命は2.6倍であり、駆動電圧は1.6倍であった。 As a result, the current efficiency (luminous efficiency) in the above example of this embodiment was 1.6 times that of the comparative example of this embodiment, the luminous lifetime was 2.6 times, and the driving voltage was 1.6 times.

 前述したように、有機材料では多くの場合、電子の移動度よりも正孔の移動度の方が高いが、例えば、Alqの場合、正孔の移動度よりも電子の移動度の方が2桁程度高いため、これをキャリア機能層の内の電子輸送層、あるいは電界発光層に使用すると、電子の移動が律速ではなくなることがある。その結果、逆に正孔の移動が律速となり、陽極層側の電界発光層での励起子生成において、正孔が不足し電子の余剰が生じることがある。さらに、前述したように、全有機材料系のn型電荷生成層を使用した場合、電荷生成層からのキャリア注入性において、正孔注入性よりも電子注入性が一般に劣るため、陽極層側の電界発光層に供給されるキャリア(ここでは電子)の供給量が少なくなることがある。その結果、陽極層側の電界発光層において励起子の生成量が少なくなることがある。 As mentioned above, in many organic materials, the mobility of holes is higher than that of electrons. For example, in the case of Alq3 , the mobility of electrons is about two orders of magnitude higher than that of holes, so when this is used in the electron transport layer or electroluminescent layer of the carrier functional layer, the movement of electrons may not be the rate-limiting factor. As a result, the movement of holes may become the rate-limiting factor, and in the generation of excitons in the electroluminescent layer on the anode layer side, holes may be insufficient and electrons may be insufficient and electrons may be insufficient. Furthermore, as mentioned above, when an n-type charge generation layer made of an all-organic material is used, the carrier injection from the charge generation layer is generally inferior to the hole injection, so the supply amount of carriers (here, electrons) supplied to the electroluminescent layer on the anode layer side may be reduced. As a result, the generation amount of excitons in the electroluminescent layer on the anode layer side may be reduced.

 しかし、上記のように、陽極層側の電界発光層においてキャリア供給のバランスが崩れる場合に、実施形態3のように陰極層側に形成される電界発光層よりも陽極層側に形成される電界発光層の厚みを適切に薄くする構成とすると、陽極層側の電界発光層に、当該電界発光層の厚さに見合ったキャリア(電子及び正孔)が供給される。そのため、電子又は正孔と結合できない余剰の正孔又は電子の発生なしに励起子が生成され、かつ陰極層側の電界発光層では、実質的に理論値の通りの量の励起子が生成される。よって、積層方向に重なるいずれの電界発光層も、その厚みに応じた輝度で発光する。さらに、余剰キャリア(電子又は正孔)の発生を防止することができるため、消費電流の低減が実現され、よって消費電力の低減も実現できる。 However, as described above, when the balance of carrier supply is lost in the electroluminescent layer on the anode layer side, if the thickness of the electroluminescent layer formed on the anode layer side is appropriately made thinner than that of the electroluminescent layer formed on the cathode layer side as in embodiment 3, carriers (electrons and holes) corresponding to the thickness of the electroluminescent layer are supplied to the electroluminescent layer on the anode layer side. Therefore, excitons are generated without the generation of surplus holes or electrons that cannot be combined with electrons or holes, and the amount of excitons generated in the electroluminescent layer on the cathode layer side is substantially the same as the theoretical value. Therefore, each electroluminescent layer overlapping in the stacking direction emits light with a brightness according to its thickness. Furthermore, since the generation of surplus carriers (electrons or holes) can be prevented, a reduction in current consumption is realized, and therefore a reduction in power consumption can also be realized.

 [実施形態4]
 実施形態1に対応する実施形態2と同様に、陰極層22側の第2電界発光層253の厚みをより厚くし、陽極層21側の第1電界発光層234をより薄くする実施形態3に対応して、電界発光層を積層方向に三層以上備える構成としてもよい。このような実施形態は、図6における電界発光層が、積層方向において陽極層側から陰極層側へ漸次減少する厚みを有するように変更された図によって図示され得る。本実施形態は、実施形態2が実施形態1と同様の効果を有するのと同様に、実施形態3と同様の効果を奏する。
[Embodiment 4]
As in the second embodiment corresponding to the first embodiment, the second electroluminescent layer 253 on the cathode layer 22 side is thicker and the first electroluminescent layer 234 on the anode layer 21 side is thinner, so that the electroluminescent layer may have three or more layers in the stacking direction. Such an embodiment can be illustrated by a diagram in which the electroluminescent layer in FIG. 6 is modified to have a thickness that gradually decreases from the anode layer side to the cathode layer side in the stacking direction. This embodiment has the same effect as the third embodiment, just as the second embodiment has the same effect as the first embodiment.

 [実施形態5]
 本実施形態は、前述した実施形態2における三つの電界発光層のうち、積層方向に隣り合う二つの電界発光層の厚さのみが前述の特定の比率となっている以外は、前述した実施形態2と同様である。このような実施形態は、例えば、図6における電界発光層34と電界発光層53の厚みを同じとし、電界発光層53に対して電界発光層71の厚みをより薄くするように変更された図によって図示され得る。
[Embodiment 5]
This embodiment is the same as the above-described embodiment 2, except that only the thicknesses of two electroluminescent layers adjacent to each other in the stacking direction among the three electroluminescent layers in the above-described embodiment 2 have the above-described specific ratio. Such an embodiment can be illustrated, for example, by a diagram in which the thicknesses of electroluminescent layer 34 and electroluminescent layer 53 in FIG. 6 are the same, and the thickness of electroluminescent layer 71 is changed to be thinner than that of electroluminescent layer 53.

 本実施形態は、前述したように、三つのスタックのうちの隣り合う二つのスタックにおいて、本開示における電界発光層の厚みの制御以外の方法によってキャリアバランスを調整した結果、残りの一つのスタックにおいて良好なキャリアバランスが得られない場合に、当該残りの一つのスタックにおけるキャリアバランスを調整するのに好適である。このような電界発光装置の構成の例には、第1スタックと第2スタックとにおいて対応するキャリア機能層の厚さが異なる構成、第1スタックと第2スタックとにおいて対応するキャリア機能層の材料が異なる構成、及び、第1スタックに含まれる第1電界発光層の材料と第2スタックに含まれる第2電界発光層の材料が異なる構成、からなる群から選ばれる一以上の構成を含む電界発光装置において、第2スタックと第3スタックとの間で電界発光層の厚みの比率が本開示で説明した前述の電界発光層の厚みの比率となっている構成、が含まれる。 As described above, this embodiment is suitable for adjusting the carrier balance in the remaining stack when a good carrier balance cannot be obtained in the remaining stack as a result of adjusting the carrier balance in two adjacent stacks among the three stacks by a method other than the control of the thickness of the electroluminescent layer in this disclosure. Examples of the configuration of such an electroluminescent device include a configuration in which the thicknesses of corresponding carrier functional layers in the first stack and the second stack are different, a configuration in which the materials of corresponding carrier functional layers in the first stack and the second stack are different, and a configuration in which the material of the first electroluminescent layer contained in the first stack and the material of the second electroluminescent layer contained in the second stack are different, and in which the ratio of the thickness of the electroluminescent layer between the second stack and the third stack is the ratio of the thickness of the electroluminescent layer described in this disclosure.

 本実施形態は、実施形態2中の積層方向に隣り合う二つの電界発光層において実施形態1と同様の効果が奏される。 In this embodiment, the same effect as in embodiment 1 is achieved in the two electroluminescent layers adjacent to each other in the stacking direction in embodiment 2.

 [実施形態6]
 本実施形態は、前述した実施形態4における三つの電界発光層のうち、積層方向に隣り合う二つの電界発光層の厚さのみが前述の特定の比率となっている以外は、前述した実施形態4と同様である。このような実施形態は、例えば、図6における電界発光層34と電界発光層53の厚みを同じとし、電界発光層53に対して電界発光層71の厚みをより厚くするように変更された図によって図示され得る。
[Embodiment 6]
This embodiment is similar to the above-described embodiment 4, except that only the thicknesses of two electroluminescent layers adjacent to each other in the stacking direction among the three electroluminescent layers in the above-described embodiment 4 have the above-described specific ratio. Such an embodiment can be illustrated, for example, by a diagram modified so that the thicknesses of electroluminescent layer 34 and electroluminescent layer 53 in FIG. 6 are the same, and the thickness of electroluminescent layer 71 is made thicker than that of electroluminescent layer 53.

 本実施形態は、前述したように、三つのスタックのうちの隣り合う二つのスタックにおいて、本開示における電界発光層の厚みの制御以外の方法によってキャリアバランスを調整した結果、残りの一つのスタックにおいて良好なキャリアバランスが得られない場合に、当該残りの一つのスタックにおけるキャリアバランスを調整するのに好適である。このような電界発光装置の構成の例は、実施形態5と同じである。本実施形態は、実施形態4中の積層方向に隣り合う二つの電界発光層において実施形態3と同様の効果が奏される。 As described above, this embodiment is suitable for adjusting the carrier balance in one remaining stack when, as a result of adjusting the carrier balance in two adjacent stacks out of three stacks by a method other than controlling the thickness of the electroluminescent layer in this disclosure, a good carrier balance cannot be obtained in the remaining stack. An example of the configuration of such an electroluminescent device is the same as in embodiment 5. This embodiment achieves the same effect as embodiment 3 in the two electroluminescent layers adjacent in the stacking direction in embodiment 4.

 〔主な作用効果〕
 本開示の電界発光装置は、複数の電界発光層が発光色ごとに積層方向に重なって形成されており、かつ、積層方向において隣り合う二つの電界発光層のうちの少なくとも一組において、積層方向の一方側の電界発光層の厚みに対する積層方向の他方側の電界発光層の厚みの比率が4/15より大きく2/3より小さい。例えば、陰極層側からの電子注入性が陽極層側からの正孔注入性よりも劣る場合、及び/又は、p型電荷生成層からの正孔注入性がn型電荷生成層からの電子注入性よりも劣る場合は、電界発光層の厚みは、陽極層側でより厚く、陰極層側でより薄くする。このような構成によれば、積層方向における各電界発光層において、余剰キャリアの発生が防止され、ほぼ理論値の輝度及び効率での発光が実現され得る。
[Major effects]
In the electroluminescent device of the present disclosure, a plurality of electroluminescent layers are formed by overlapping in the stacking direction for each luminescent color, and in at least one pair of two electroluminescent layers adjacent in the stacking direction, the ratio of the thickness of the electroluminescent layer on one side in the stacking direction to the thickness of the electroluminescent layer on the other side in the stacking direction is greater than 4/15 and smaller than 2/3. For example, when the electron injection from the cathode layer side is inferior to the hole injection from the anode layer side, and/or when the hole injection from the p-type charge generation layer is inferior to the electron injection from the n-type charge generation layer, the thickness of the electroluminescent layer is made thicker on the anode layer side and thinner on the cathode layer side. With this configuration, the generation of excess carriers is prevented in each electroluminescent layer in the stacking direction, and light emission with approximately theoretical brightness and efficiency can be realized.

 一方、陽極層側からの正孔注入性が陰極層側からの電子注入性よりも劣る場合、及び/又は、n型電荷生成層からの電子注入性がp型電荷生成層からの正孔注入性よりも劣る場合には、電界発光層の厚みは、陰極層側でより厚く、陽極層側でより薄くする。このような構成によれば、積層方向における各電界発光層において、余剰キャリアの発生が防止され、ほぼ理論値の輝度及び効率での発光が実現され得る。 On the other hand, if the hole injection from the anode layer side is inferior to the electron injection from the cathode layer side, and/or if the electron injection from the n-type charge generation layer is inferior to the hole injection from the p-type charge generation layer, the thickness of the electroluminescent layer is made thicker on the cathode layer side and thinner on the anode layer side. With this configuration, the generation of excess carriers is prevented in each electroluminescent layer in the stacking direction, and light emission with approximately theoretical brightness and efficiency can be achieved.

 また、本開示の電界発光装置は、一方側の電界発光層の厚みよりも他方側の電界発光層の厚みが薄くなることから、積層方向における各電界発光層の厚みが一定の場合と比べて、陽極層から陰極層までのトータルの電界発光層の厚みが減少する。そのため、積層方向におけるそれぞれの電界発光層に印加する電界(単位:V/m)を同一とした場合、駆動電圧(単位:V)の低減が実現できる。また、積層されたそれぞれの電界発光層における余剰キャリアの発生を抑えられるため、消費電流が削減される。したがって、消費電力(単位:W=V×A)の低減も実現される。なお、積層方向における一方側から他方側に向けて漸次電界発光層の厚みを薄くすることで、電界発光素子の積層方向における全体で、前述した輝度(発光効率)の向上及び消費電力の削減等の効果が実現され得る。 In addition, in the electroluminescent device of the present disclosure, the thickness of the electroluminescent layer on one side is thinner than the thickness of the electroluminescent layer on the other side, so the total thickness of the electroluminescent layer from the anode layer to the cathode layer is reduced compared to when the thickness of each electroluminescent layer in the stacking direction is constant. Therefore, when the electric field (unit: V/m) applied to each electroluminescent layer in the stacking direction is the same, a reduction in the driving voltage (unit: V) can be achieved. In addition, since the generation of excess carriers in each stacked electroluminescent layer is suppressed, the current consumption is reduced. Therefore, a reduction in power consumption (unit: W = V x A) is also achieved. Note that by gradually reducing the thickness of the electroluminescent layer from one side to the other side in the stacking direction, the effects of improving the brightness (light emitting efficiency) and reducing power consumption described above can be achieved throughout the stacking direction of the electroluminescent element.

 よって、本開示の電界発光装置は、積層方向において各電界発光層の厚みが同一の従来のタンデム構造を有する電界発光装置の場合に比べて、より高輝度発光、低電圧駆動、及び低消費電力化が実現される。よって、本開示によれば、カラーフィルタ等を用いることなくフルカラー表示が可能な電界発光装置において、タンデム構造による長所である高輝度及び/又は省電力の発光を実現することが可能となる。 As a result, the electroluminescent device of the present disclosure achieves higher brightness emission, lower voltage operation, and lower power consumption compared to electroluminescent devices having a conventional tandem structure in which the thickness of each electroluminescent layer is the same in the stacking direction. Therefore, according to the present disclosure, in an electroluminescent device capable of full-color display without using color filters or the like, it is possible to achieve high brightness and/or low power emission, which are advantages of a tandem structure.

 また、電界発光層をホスト・ゲスト系の電界発光層とすることにより、高い発光効率と素子寿命との向上が実現できるが、本開示によれば、各電界発光層におけるキャリアバランス(電子と正孔とのバランス)をより高めることができる。そのため、高い発光効率と優れた寿命を持つホスト・ゲスト系の各電界発光層の性能を十分に引き出すことができるという観点から有利である。また、ゲスト化合物として用いられる高価、かつ希少な燐光ドーパントの量を削減できる点からも有利である。 Furthermore, by using a host-guest electroluminescent layer as the electroluminescent layer, high luminous efficiency and improved device life can be achieved, and according to the present disclosure, the carrier balance (balance between electrons and holes) in each electroluminescent layer can be further improved. This is advantageous from the viewpoint of being able to fully utilize the performance of each host-guest electroluminescent layer, which has high luminous efficiency and excellent life. It is also advantageous from the viewpoint of being able to reduce the amount of expensive and rare phosphorescent dopant used as the guest compound.

 また、電界発光層が、蛍光ドーパントを含む蛍光電界発光層と燐光ドーパントを含む燐光電界発光層とを含む場合に、積層方向における蛍光電界発光層の数を燐光電界発光層の数よりも多く、例えば1又は2多くしてもよい。この構成は、蛍光電界発光層と燐光電界発光層との間で、寿命のバランスと、発光量のバランスとの両方を適正化する観点からより一層効果的である。 In addition, when the electroluminescent layer includes a fluorescent electroluminescent layer containing a fluorescent dopant and a phosphorescent electroluminescent layer containing a phosphorescent dopant, the number of fluorescent electroluminescent layers in the stacking direction may be greater than the number of phosphorescent electroluminescent layers, for example, by 1 or 2. This configuration is even more effective in terms of optimizing both the balance of the lifetime and the balance of the amount of light emitted between the fluorescent electroluminescent layer and the phosphorescent electroluminescent layer.

 また、積層方向に積層される複数の電界発光層を同色のみとすることにより、RGB各色を塗分けてフルカラー表示を可能にする電界発光装置において、色純度の向上を実現する観点から有利となる。更に、同色に発光する同一材料をそれぞれの電界発光層に積層する場合には、シミュレーションによる各電界発光層間のキャリア注入性及びキャリア輸送性の評価がより容易になる。このように、上記の構成は、より簡便に所望の特性を有する電界発光素子を含むフルカラー表示可能な電界発光装置を実現する観点からより一層効果的である。 In addition, by making the multiple electroluminescent layers stacked in the stacking direction only the same color, it is advantageous in terms of improving color purity in an electroluminescent device that enables full-color display by painting each RGB color separately. Furthermore, when the same material that emits the same color is stacked in each electroluminescent layer, it becomes easier to evaluate the carrier injection property and carrier transport property between each electroluminescent layer by simulation. In this way, the above configuration is even more effective in terms of more easily realizing an electroluminescent device capable of full-color display including electroluminescent elements having desired characteristics.

 また、積層方向における電界発光層の数は2以上5以下であってよい。この構成は、発光効率の向上、長寿命化及び駆動電圧の低減を実現する観点からより一層効果的である。 The number of electroluminescent layers in the stacking direction may be 2 or more and 5 or less. This configuration is even more effective in terms of improving the luminous efficiency, extending the life span, and reducing the driving voltage.

 また、スタックの厚さに対する当該スタック中の電界発光層の厚みの比率を0.05以上0.35以下とすることにより、キャリア機能層の厚みが適正化され、電界発光層に対して供給されるキャリアの量が不足する虞をより軽減することができる。よって、理論値の輝度での発光を実現する観点からより一層効果的である。 In addition, by setting the ratio of the thickness of the electroluminescent layer in the stack to the thickness of the stack to be 0.05 or more and 0.35 or less, the thickness of the carrier functional layer is optimized, and the risk of a shortage of carriers supplied to the electroluminescent layer can be further reduced. This is therefore even more effective in terms of achieving light emission with theoretical brightness.

 また、本開示の電界発光装置はトップエミッション型であってもよい。この構成は、キャリア機能層の厚みを適正化する観点からより一層効果的である。 The electroluminescent device of the present disclosure may also be a top-emission type. This configuration is even more effective in terms of optimizing the thickness of the carrier functional layer.

 また、本開示の表示装置は、前述の電界発光装置を備える。よって、積層方向の一方側の電界発光層の厚みに対する積層方向の他方側の電界発光層の厚みの比率が4/15より大きく2/3より小さくすることが可能となる。そのため、積層方向における各電界発光層において、余剰キャリアの発生が防止されることにより注入される電流をより無駄なく発光に寄与させることができる観点から有利である。よって、本開示によれば、表示装置において高輝度、省電力の発光が実現され、電界発光装置においてタンデム構造を採用することによる長所を十分に発現させることが可能となる。 The display device of the present disclosure also includes the electroluminescent device described above. Thus, it is possible to make the ratio of the thickness of the electroluminescent layer on one side of the stacking direction to the thickness of the electroluminescent layer on the other side of the stacking direction greater than 4/15 and smaller than 2/3. This is advantageous in that the generation of excess carriers is prevented in each electroluminescent layer in the stacking direction, allowing the injected current to contribute to light emission more efficiently. Thus, according to the present disclosure, high-brightness, low-power light emission is achieved in the display device, and the advantages of adopting a tandem structure in the electroluminescent device can be fully realized.

 また、本開示の電界発光装置において、少なくとも電界発光層を蒸着法で形成することは、他の製法によって電界発光層を形成する場合に比べて、ホスト・ゲスト系の電界発光層の形成及び高精細な発光層の塗分けが可能であることから、フルカラー表示可能な電界発光装置を実現する上で有利である。加えて、それぞれの電界発光層の厚みを高い精度での制御を実現するのにも有利である。特に、インクジェット装置等を用いる塗布法での電界発光層の形成では、ホスト化合物にゲスト化合物をドーピングしながら電界発光層を形成すること、及び数nmオーダーの電界発光層の厚み制御が困難である。よって、塗布法では本開示のフルカラー表示可能な電界発光装置を形成することは困難と考えられる。 Furthermore, in the electroluminescent device of the present disclosure, forming at least the electroluminescent layer by a vapor deposition method is advantageous in realizing an electroluminescent device capable of full color display, since it is possible to form a host-guest electroluminescent layer and to paint a highly precise luminescent layer, compared to forming an electroluminescent layer by other manufacturing methods. In addition, it is also advantageous in realizing high-precision control of the thickness of each electroluminescent layer. In particular, when forming an electroluminescent layer by a coating method using an inkjet device or the like, it is difficult to form an electroluminescent layer while doping a guest compound into a host compound, and to control the thickness of the electroluminescent layer to the order of several nm. Therefore, it is considered difficult to form the electroluminescent device of the present disclosure capable of full color display by a coating method.

 また、本開示の電界発光装置の製造では、積層方向における、厚さの異なる電界発光層を、蒸着時間のみを変更して形成してもよい。この構成によれば、時間以外は同じ条件を適用して、厚さの異なる電界発光層を同じ製造設備にて形成可能であることから、製造コストの抑制及び生産性の向上の観点からより一層効果的である。 Furthermore, in the manufacture of the electroluminescent device of the present disclosure, electroluminescent layers of different thicknesses in the stacking direction may be formed by changing only the deposition time. With this configuration, electroluminescent layers of different thicknesses can be formed in the same manufacturing equipment by applying the same conditions except for the deposition time, which is even more effective in terms of reducing manufacturing costs and improving productivity.

 なお、複数の電界発光層(タンデム構造)を有する電界発光素子を含む電界発光装置は、通常、積層方向における同一色で発光する電界発光層の厚みが一定である。一方で、陰極層側により厚い電界発光層を有し、陽極層側により薄い電界発光層を含む技術(日本国特開2007-329054号公報、及び国際公開第2010/113493号公報等)、及び陽極層側により厚い電界発光層を有し、陰極層側により薄い電界発光層を含む技術(日本国特開2015-153587号公報及び日本国特開2015-32582号公報等)も存在する。しかしながら、これらの従来の技術において、それぞれの電界発光層の厚みを積層方向において異ならせる理由は明らかにはされておらず、上記の公報は、RGB各色を塗分けてフルカラー表示を実現することを開示するものでもない。 In addition, in electroluminescent devices including electroluminescent elements having multiple electroluminescent layers (tandem structure), the thickness of the electroluminescent layers that emit light of the same color in the stacking direction is usually constant. On the other hand, there are also technologies that have a thicker electroluminescent layer on the cathode layer side and a thinner electroluminescent layer on the anode layer side (JP Patent Publication No. 2007-329054, WO 2010/113493, etc.), and technologies that have a thicker electroluminescent layer on the anode layer side and a thinner electroluminescent layer on the cathode layer side (JP Patent Publication No. 2015-153587, JP Patent Publication No. 2015-32582, etc.). However, in these conventional technologies, the reason for making the thicknesses of the electroluminescent layers different in the stacking direction is not made clear, and the above publications do not disclose the realization of full-color display by painting each of the RGB colors separately.

 本開示によれば、電界発光による表示装置において、積層方向におけるそれぞれの電界発光層の厚みの制御によってさらなる高発光効率、高輝度及び/又は省電力化を実現可能である。よって、本開示の電界発光装置及び表示装置は、例えば、国連が提唱する持続可能な開発目標(SDGs)の目標9.4「資源利用効率の向上とクリーン技術及び環境に配慮した技術・産業プロセスの導入拡大を通じたインフラ改良や産業改善により、持続可能性を向上させる。」等の達成に貢献することが期待される。 According to the present disclosure, in an electroluminescent display device, it is possible to achieve even higher luminous efficiency, higher brightness, and/or power savings by controlling the thickness of each electroluminescent layer in the stacking direction. Therefore, the electroluminescent device and display device of the present disclosure are expected to contribute to the achievement of, for example, Goal 9.4 of the Sustainable Development Goals (SDGs) proposed by the United Nations, which states, "Improve sustainability by improving infrastructure and industry through increased resource efficiency and the expanded introduction of clean technologies and environmentally friendly technologies and industrial processes."

 本開示は上述した各実施形態に限定されず、請求項に示した範囲で種々の変更が可能である。異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態も、本開示の技術的範囲に含まれる。さらに、各実施形態にそれぞれ開示された技術的手段を組み合わせることにより、新しい技術的特徴を形成することができる。 This disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of this disclosure. Furthermore, new technical features can be formed by combining the technical means disclosed in the respective embodiments.

 10、10A、210 電界発光素子
 11 基板
 12 バッファ層
 13 電界発光装置
 14 封止層
 15 外部機能層
 16 エッジカバー膜
 20 TFT層
 21 陽極層
 22 陰極層
 30、50、70、230、250 層の集合
 31 正孔注入層
 32 第1正孔輸送層
 33 第1電子ブロック層
 34、234 第1電界発光層
 35 第1正孔ブロック層
 36 第1電子輸送層
 40 第1電荷生成層
 41 n型第1電荷生成層
 42 p型第1電荷生成層
 51 第2正孔輸送層
 52 第2電子ブロック層
 53、253 第2電界発光層
 54 第2正孔ブロック層
 55 第2電子輸送層
 56 電子注入層
 60 有機積層体
 71 第3電界発光層
 80 第2電荷生成層
 100、100A、200 表示装置
 DA 表示領域
 NDA 額縁領域
 PIX 画素

 
10, 10A, 210 Electroluminescent element 11 Substrate 12 Buffer layer 13 Electroluminescent device 14 Sealing layer 15 External functional layer 16 Edge cover film 20 TFT layer 21 Anode layer 22 Cathode layer 30, 50, 70, 230, 250 Assembly of layers 31 Hole injection layer 32 First hole transport layer 33 First electron blocking layer 34, 234 First electroluminescent layer 35 First hole blocking layer 36 First electron transport layer 40 First charge generation layer 41 First n-type charge generation layer 42 First p-type charge generation layer 51 Second hole transport layer 52 Second electron blocking layer 53, 253 Second electroluminescent layer 54 Second hole blocking layer 55 Second electron transport layer 56 Electron injection layer 60 Organic laminate 71 Third electroluminescent layer 80 Second charge generation layer 100, 100A, 200 Display device DA Display area NDA Frame area PIX Pixel

Claims (11)

 陽極層と、
 積層方向において前記陽極層に対向する陰極層と、
 前記積層方向における前記陽極層と前記陰極層との間、及び前記積層方向に交差する方向、のそれぞれにおいて複数配置されている電界発光層と、
 前記積層方向において隣り合う二つの前記電界発光層間に配置される電荷生成層と、を有し、
 前記電界発光層は、
  前記積層方向には、同じ色に発光する電界発光層が複数配置されており、
  前記積層方向に交差する方向には、互いに異なる色に発光する第1色の電界発光層から第n色の電界発光層(n≧2の整数)が配置されており、かつ、
 前記積層方向において前記電荷生成層を介して隣り合う二つの前記電界発光層の組の少なくとも一組において、前記積層方向の一方側の前記電界発光層の厚みに対する前記積層方向の他方側の前記電界発光層の厚みの比率が4/15より大きく2/3より小さい、
 電界発光装置。
an anode layer;
a cathode layer facing the anode layer in a stacking direction;
a plurality of electroluminescent layers disposed between the anode layer and the cathode layer in the stacking direction and in a direction intersecting the stacking direction;
a charge generation layer disposed between two of the electroluminescent layers adjacent to each other in the stacking direction;
The electroluminescent layer is
A plurality of electroluminescent layers that emit light of the same color are arranged in the stacking direction,
In a direction intersecting the lamination direction, electroluminescent layers of a first color to an n-th color (n is an integer of 2 or more) that emit light of different colors are arranged, and
in at least one pair of two electroluminescent layers adjacent to each other in the stacking direction with the charge generation layer interposed therebetween, a ratio of a thickness of the electroluminescent layer on one side in the stacking direction to a thickness of the electroluminescent layer on the other side in the stacking direction is greater than 4/15 and smaller than 2/3;
Electroluminescent device.
 前記電界発光層は、いずれも、ホスト化合物とゲスト化合物とを含むホスト・ゲスト系の電界発光層である、請求項1に記載の電界発光装置。 The electroluminescent device according to claim 1, wherein each of the electroluminescent layers is a host-guest electroluminescent layer containing a host compound and a guest compound.  前記電界発光層は、発光色に応じて、前記ゲスト化合物が蛍光ドーパントである蛍光電界発光層と、前記ゲスト化合物が燐光ドーパントである燐光電界発光層と、を含み、
 前記積層方向における前記蛍光電界発光層の数は、前記積層方向における前記燐光電界発光層の数より多い、請求項2に記載の電界発光装置。
the electroluminescent layer includes a fluorescent electroluminescent layer in which the guest compound is a fluorescent dopant and a phosphorescent electroluminescent layer in which the guest compound is a phosphorescent dopant according to the emission color;
3. The electroluminescent device according to claim 2, wherein the number of said fluorescent electroluminescent layers in said stacking direction is greater than the number of said phosphorescent electroluminescent layers in said stacking direction.
 前記積層方向における前記蛍光電界発光層の数は、前記積層方向における前記燐光電界発光層の数より1又は2多い、請求項3に記載の電界発光装置。 The electroluminescent device according to claim 3, wherein the number of the fluorescent electroluminescent layers in the stacking direction is one or two more than the number of the phosphorescent electroluminescent layers in the stacking direction.  前記積層方向には、前記同じ色に発光する電界発光層のみが複数配置されている、請求項1から4のいずれか1項に記載の電界発光装置。 The electroluminescent device according to any one of claims 1 to 4, in which only a plurality of electroluminescent layers that emit light of the same color are arranged in the stacking direction.  前記積層方向における前記電界発光層の数は、2以上5以下である、請求項1から5のいずれか1項に記載の電界発光装置。 The electroluminescent device according to any one of claims 1 to 5, wherein the number of electroluminescent layers in the stacking direction is 2 or more and 5 or less.  前記積層方向における前記陽極層と前記電荷生成層との間、前記電荷生成層間、及び前記電荷生成層と前記陰極層との間、に配置される一の前記電界発光層を含む層の集合を一のスタックとしたときに、
 前記積層方向における前記スタックの厚さに対する前記スタック中の前記電界発光層の厚みの比率は、0.05以上0.35以下である、請求項1から6のいずれか1項に記載の電界発光装置。
When a set of layers including one electroluminescent layer disposed between the anode layer and the charge generation layer, between the charge generation layers, and between the charge generation layer and the cathode layer in the stacking direction is defined as one stack,
7. The electroluminescent device according to claim 1, wherein a ratio of a thickness of the electroluminescent layer in the stack to a thickness of the stack in the stacking direction is 0.05 to 0.35.
 トップエミッション型である、請求項1から7のいずれか1項に記載の電界発光装置。 The electroluminescent device according to any one of claims 1 to 7, which is a top emission type.  請求項1から8のいずれか1項に記載の電界発光装置を備えている、表示装置。 A display device comprising the electroluminescent device according to any one of claims 1 to 8.  請求項1から8のいずれか1項に記載の電界発光装置を製造する方法であって、前記陽極層又は前記陰極層上に前記電界発光層と前記電荷生成層とを前記積層方向において交互に形成する工程を含む電界発光装置の製造方法であって
 前記電界発光層を蒸着法によって形成する、電界発光装置の製造方法。
9. A method for manufacturing the electroluminescent device according to claim 1, comprising the step of alternately forming the electroluminescent layer and the charge generation layer on the anode layer or the cathode layer in the stacking direction, the method comprising the step of forming the electroluminescent layer by a vapor deposition method.
 前記積層方向における、厚さの異なる前記電界発光層を、蒸着時間のみを変更して形成する、請求項10に記載の電界発光装置の製造方法。 The method for manufacturing an electroluminescent device according to claim 10, in which the electroluminescent layers having different thicknesses in the stacking direction are formed by changing only the deposition time.
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