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WO2024182607A1 - Matériau pour applications de capteur - Google Patents

Matériau pour applications de capteur Download PDF

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Publication number
WO2024182607A1
WO2024182607A1 PCT/US2024/017870 US2024017870W WO2024182607A1 WO 2024182607 A1 WO2024182607 A1 WO 2024182607A1 US 2024017870 W US2024017870 W US 2024017870W WO 2024182607 A1 WO2024182607 A1 WO 2024182607A1
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WO
WIPO (PCT)
Prior art keywords
sensor
microbolometer
substrate
pixel
implementation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/US2024/017870
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English (en)
Inventor
Sean ANDREWS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Obsidian Sensors Inc
Original Assignee
Obsidian Sensors Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Obsidian Sensors Inc filed Critical Obsidian Sensors Inc
Priority to KR1020257032782A priority Critical patent/KR20250156166A/ko
Publication of WO2024182607A1 publication Critical patent/WO2024182607A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0022—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiation of moving bodies
    • G01J5/0025—Living bodies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide

Definitions

  • the present disclosure relates to material for sensors, and more specifically, to using niobium oxide (NbOx) as the sensor material .
  • NbOx niobium oxide
  • Uncooled thermo-resistive sensors including microbolometers, thermistors, and passive infrared (PIR) motion sensors, may use resistive transduction of heat to current or voltage. Performance and stability of these devices may be dictated by the sensor material . These resistive materials may exhibit a higher temperature coefficient of resistance (TCR) while being limited by excess noise (e.g. , 1/f in character) . These devices may be used to convert a fixed bias voltage to a current output (or vice versa) wherein changes in the output stem from changes in the resistor's temperature.
  • TCR temperature coefficient of resistance
  • excess noise e.g. 1/f in character
  • thermo-resistive sensors such as microbolometers, thermistors, and PIR motion sensors.
  • thermo-resistive sensor includes: a substrate; a structure coupled to the substrate; and a layer of niobium oxide coupled to the structure.
  • a microbolometer sensor for thermal imaging includes: a substrate; a structure coupled to the substrate but positioned to thermally isolate the structure from the substrate; and a pixel coupled to the structure, wherein the pixel includes a layer of niobium oxide
  • a microbolometer sensor for thermal imaging includes: a niobium oxide material having a metal-to-insulator transition (MIT) temperature above 400°C and a temperature coefficient of resistance (TCR) of 2-5% at room temperature.
  • MIT metal-to-insulator transition
  • TCR temperature coefficient of resistance
  • FIG. 1 shows exemplary transition temperatures of different materials, including NbO 2 and VO 2 ;
  • FIG. 2 illustrates an exemplary sensor in accordance with an implementation
  • FIG. 3 shows noise measurement data and associated Hooge parameter for an exemplary NbO x sensor
  • FIG. 4 shows TCR data for an exemplary NbO x sensor which remains unchanged over several weeks
  • FIG. 5 shows noise measurement data and associated Hooge parameter for an exemplary Ti -doped NbO x sensor
  • FIG. 6 shows TCR data for an exemplary Ti-doped- NbO x sensor
  • FIG. 7 shows signal-to-noise ratio data for exemplary NbO x and Ti- doped NbO x sensors
  • FIG. 8 shows exemplary dependence of the resistivity on the partial pressure of O 2 during reactive sputtering
  • FIG. 9 shows performance comparisons between exemplary sensors including different materials.
  • conventional resistive sensor materials for microbolometers may exhibit a higher TCR while being limited by excess noise (e.g., 1/f in character) .
  • These microbolometers may use amorphous silicon, which may be limited in performance due to higher 1/f noise and a more limiting temperature stability window.
  • the noise is lowered by crystallizing part of the amorphous network or by lowering resistivity (e.g. , by increasing crystallinity or doping)
  • the TCR may drop beyond an acceptable level .
  • Some uncooled bolometers use vanadium oxide (Vox or VO 2 ) , which may have better noise metrics while maintaining higher TCR values.
  • the metal-to-insulator transition (MIT) for VOx may be approximately 65-85C. This may limit the operational temperature of devices utilizing VOx near or below the transition temperature. While materials such as quantum wells, graphene, and carbon nanotubes may be used for thermal sensing, they may not be as suitable when considering manufacturability.
  • Certain implementations of the present disclosure provide for microbolometers using niobium oxide (NbOx) as sensor material .
  • NbOx may refer to niobium monoxide (NbO) , niobium pentoxide (Nb 2 O 5 ) , or preferably niobium dioxide (NbO 2 ) .
  • the preferred target is NbO 2 , based on the f ilm properties desired and the physical non- stoichiometric nature of non- crystalline materials , the actual Nb/O ratio may not be exactly 2 , but rather between 1 . 8 and 2 . 2 .
  • the transition temperature for NbO 2 is above 400°C , which may make it a less suitable material for switching applications operating near room temperature .
  • some microbolometer implementations may benef it from a transition temperature that is substantially higher than the temperature of operation .
  • the higher transition temperature allows a higher dynamic range of operation for some thermosensitive applications . For example , high temperature obj ects in a scene may not push the pixel temperature past the transition in a microbolometer that uses NbO 2 .
  • the factors include high TCR, low 1/f noise , process compatibility, manuf cturing potential into a thin f ilm, appropriate resistivity, and high transition temperature .
  • FIG . 1 shows exemplary transition temperatures of dif ferent materials , including NbO 2 and V0 2 .
  • FIG . 1 clearly shows that NbO 2 is a good candidate based on a high transition temperature while satisfying other factors mentioned above .
  • the senor includes an uncooled microbolometer sensor for thermal imaging in Long-Wave Infrared (LWIR) , Mid-Wave Infrared (MWIR) , or Short -Wave Infrared ( SWIR) .
  • the sensor includes an antenna- coupled uncooled microbolometer sensor for terahertz sensors .
  • the sensor includes a low noise thermistor .
  • the sensor includes a passive infrared ( PIR) sensor .
  • the sensor has an operational temperature range of -40°C to 345°C . In one implementation, the sensor may not be damaged when exposed to or imaging high temperature sources , such as the sun .
  • the upper end of the operating temperature (ambient ) of a microbolometer using the NbOx sensor may be established as follows .
  • a microbolometer that is imaged onto an obj ect in the f ield of view may have a temperature transfer ratio of 1/100 . That is , if the obj ect surface temperature is T_obj ect , the pixel temperature may increase from the ambient temperature by T_obj ect/100 .
  • the operating temperature T_op adds directly to the pixel temperature so the pixel temperature may become T_op + T_obj ect/100 .
  • the operating temperature T_op ⁇ 345°C may be substantially below this .
  • the senor has a range of resistivities of 1 to 100 ohm- cm at room temperature , which may enable a desired noise equivalent temperature dif ference (NETD) , as described below .
  • the range of resistivities may be set based on pixel geometric factors , such as pixel pitch and thickness , and requirements of an associated readout circuit .
  • the resistivity range is achieved via intrinsic non- stoichiometries , wherein a lower x results in lower resistivity .
  • the resistivity range is achieved using extrinsic doping with at least one of titanium (Ti ) , molybdenum (Mo) , and other suitable dopants , such as Chromium (Cr) .
  • the senor includes an LWIR, MWIR, or SWIR microbolometer sensor , and a complex refractive index of the sensor provides suf f icient absorption for transducing radiation input to heat .
  • the senor advantageously achieves a desired pixel resistance , 1/f noise power , TCR, and material stability .
  • the performance of the sensor is expressed in NETD
  • the desired sensor parameters may achieve a desired NETD ( lower numbers are better) .
  • the NETD may be expressed as a function of bolometer and camera parameters as follows : wherein, K is the 1/f noise parameter that is determined by the resistive sensor material (K is unitless since it represents the f luctuations in a normalized quantity) ,
  • 5L/ (dTtarget) is the dif ferential radiance (per temperature dif ference) at the target or obj ect , integrated across the LWIR band ( 8 - 14
  • a p is the area of the pixel
  • Gth is the thermal conductance of the pixel
  • f H and f L are the high frequency and low frequency limits of integration to have a standard measure of 1/f noise energy .
  • the lower the Gth the larger temperature rise for a given energy absorbed .
  • the hinges need to be narrower and/or thinner to make up for the shorter hinge resulting from the reduced pixel pitch .
  • the Gth scaling may also help with the fact that the pixel has become smaller and the ability for the lens to become faster ( smaller F/# ) is limited .
  • the senor advantageously exhibits lower 1/f noise , as quantif ied by the Hooge parameter (i.e., K*V ⁇ 5*e -22 cm 3 , where K is the measured 1/f noise shown in Equation [1] that is determined by the resistive sensor material and V is the volume of a sample) .
  • the Hooge parameter is a material -dependent parameter that allows for noise comparison between materials. Since the noise of the device decreases as the size of the device increases, the Hooge parameter is used as a means to normalize the size effects.
  • FIG. 3 shows noise measurement data and associated Hooge parameter for an exemplary NbO x sensor.
  • FIG. 3 is a graph of the noise as a function of frequency, wherein the dependence is linear on a log- log scale. This graph shows that, once normalized to the applied voltage, all of the noise values for the device directly overlay.
  • this graph provides confidence in the value measured for the noise.
  • the Hooge parameter is then calculated by multiplying the noise (i.e. , K value which is y-axis value at 1 Hz) measured here times the volume of the sensor in the device (not given in the graph) .
  • FIG. 4 shows TCR data for an exemplary NbO x sensor.
  • the TCR data advantageously remains unchanged over several weeks.
  • the TCR value obtained from this graph may be used in Equation [1] .
  • the graph of FIG. 4 shows that this material (i.e. , NbO x ) is suitable for temperature sensing applications .
  • FIG. 5 shows noise measurement data and associated Hooge parameter for an exemplary Ti-NbO x sensor.
  • NbOx is doped with titanium dopants (Ti-) .
  • FIG. 5 shows that even when doped/alloyed with another metal that results in a change in resistivity, the noise remains low.
  • FIG. 6 shows TCR data for an exemplary Ti-NbO x sensor, and shows that the TCR value, like the resistivity, may be tuned with external doping/alloying .
  • the resistivity and TCR may be controlled using different methods such as by controlling the Nb/O ratio directly.
  • FIG. 7 shows signal-to-noise ratio data for exemplary NbO x and Ti-NbO x sensors.
  • the graph of FIG. 7 shows that the signal-to-noise ratio (SNR) , defined here TCR as , — , is higher for Ti-doped films.
  • SNR signal-to-noise ratio
  • NbOx without doping may improve signal-to-noise ratio by lowering resistivity and/or TCR to an unsuitable range for some applications.
  • the addition of Ti advantageously allows the TCR to increase while reducing noise.
  • Cr is added to reduce resistivity for NbOx material having a higher oxygen content .
  • a sensor includes amorphous or polycrystalline thin films of NbOx.
  • the sensor includes Amorphous or polycrystalline thin films of NbO x .
  • a sensor is configured to not change phase (e.g. , from metal to insulator) within a range of temperature, for example, -40 to 345°C.
  • the range of temperature is associated with excursion during packaging process.
  • the range of temperature is associated with temperature excursion during sensor operation.
  • the NbO x is compatible with silicon processing and/or glass substrate semiconductor processing (e.g. , PVD or CVD) .
  • the NbO x has a TCR of 2-5% (a preferred TCR number is between 2 and 3%) , which may advantageously satisfy TCR requirements for achieving a desired NETD, and can be controlled by deposition and anneal processes during manufacturing of the sensor.
  • the deposition includes one or more of reactive sputter, molecular-beam epitaxy (MBE) , metal organic chemical vapor deposition (MOCVD) , atomic layer deposition (ALD) , physical vapor deposition (PVD) , electrochemical deposition, sol-gel techniques, and other thin-film deposition techniques.
  • MBE molecular-beam epitaxy
  • MOCVD metal organic chemical vapor deposition
  • ALD atomic layer deposition
  • PVD physical vapor deposition
  • electrochemical deposition sol-gel techniques, and other thin-film deposition techniques.
  • FIG. 8 shows exemplary dependence of the resistivity on the partial pressure of O 2 during reactive sputtering.
  • the graph of FIG. 8 shows resistivity as a function of both oxygen content and thermal process and not dominated by either, but rather scales.
  • the graph shows that conductive oxides may not be too sensitive to subsequent processes, such as high temperature steps, and may not limit the allowable properties of a film. Thus, this means that NbOx may be tuned in resistivity without the need of an external dopant.
  • the graph also shows that the subsequent thermal processing, like the type required for vacuum packaging, has a small but deterministic effect .
  • FIG. 9 is a graph showing performance comparisons io between sensors with dif ferent materials .
  • the graph shows that the disclosed NbOx-based sensors may achieve similar or better performance as VOx with the described benef its .
  • FIG . 2 is a block diagram of a thermo- resistive sensor 200 in accordance with one implementation of the present disclosure .
  • sensor 200 includes a substrate 230 , a structure 220 coupled to substrate 230 , and a pixel 210 coupled to the structure 220 .
  • the structure 220 is positioned to thermally isolate the structure 220 from the substrate 230 .
  • the pixel 210 includes a layer of niobium oxide .
  • sensor 200 experiences a voltage dif ference and generates a current or charge based on the received radiation (e . g . , the resistance between two terminals of the sensor changes in response to exposure to LWIR or MWIR radiation) .
  • the thermo- resistive sensor is a microbolometer and the structure is thermally isolated from the substrate .
  • the thermo- resistive sensor is a thermistor .
  • the thermo- resistive sensor is a passive infrared ( PIR) motion sensor .
  • the niobium oxide is NbO 2 .
  • the niobium oxide is NbOx .
  • the niobium oxide is titanium doped, Ti -NbOx .
  • the layer of niobium oxide is a pixel sensor .
  • a microbolometer sensor for imaging includes : a substrate ; a structure coupled to the substrate ; and a pixel coupled to the structure , wherein the pixel includes a layer of niobium oxide .
  • the senor is used for thermal imaging in an infrared (IR) range .
  • the IR range includes at least one of Long-Wave Infrared (LWIR) , Mid-Wave Infrared (MWIR) , and Short -Wave Infrared ( SWIR) .
  • the sensor has an operation range of -40°C to 345°C .
  • the sensor further includes a readout circuit .
  • the sensor has a range of resistivities that is set based on geometric factors of the pixel and the requirements of the readout circuit .
  • the geometric factors of the pixel include pixel pitch and thickness .
  • the range of resistivities is achieved using extrinsic doping with at least one of titanium (Ti ) , molybdenum (Mo) , and Chromium (Cr) .
  • the sensor has the range of resistivities of 1 to 100 ohm- cm at room temperature .
  • the structure is a set of hinges that thermally isolates the pixel from the substrate .
  • a microbolometer sensor for thermal imaging includes a niobium oxide material having a metal - to- insulator transition (MIT) temperature above 400°C and a temperature coef f icient of resistance (TCR) of 2 - 5% at room temperature .
  • MIT metal - to- insulator transition
  • TCR temperature coef f icient of resistance
  • the niobium oxide material has a resistivity of 1 to 100 ohm- cm at room temperature .
  • the microbolometer sensor further includes : a substrate ; and a structure coupled to the substrate , wherein the structure is a set of hinges that thermally isolates the niobium oxide material from the substrate .
  • a sensor includes a glass substrate, a structure manufactured from any of the methods described herein and coupled to the glass substrate, and a pixel coupled to the structure.
  • the pixel includes a material described herein.
  • a sensor includes a MEMS or NEMS device manufactured by an LCD-TFT manufacturing process and a structure manufactured by any of the methods described herein.
  • sensors can include resistive sensors.
  • Bolometers (or microbolometers) can be used in a variety of applications.
  • LWIR long wave infra-red
  • bolometers can be used in the automotive and commercial security industries.
  • Terahertz (THz, wavelength of approximately 1.0 -0.1 mm) bolometers can be used in security (e.g. , airport passenger security screening) and medical (medical imaging) .
  • Some electronic or electrooptical systems can include X-Ray sensors or camera systems.
  • LWIR and THz sensors are used in camera systems .
  • Some electromechanical systems are applied in medical imaging, such as endoscopes and exoscopes.
  • X-ray sensors include direct and indirect sensing configurations.
  • one implementation includes using different dopants than described.
  • manufacturing temperature e.g., growth temperature
  • additional processing may be performed on the material, such as annealing and/or laser- induced crystallization .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

L'invention concerne un capteur thermo-résistif, comprenant : un substrat ; une structure couplée au substrat ; et une couche d'oxyde de niobium couplée à la structure.
PCT/US2024/017870 2023-03-01 2024-02-29 Matériau pour applications de capteur Pending WO2024182607A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257032782A KR20250156166A (ko) 2023-03-01 2024-02-29 센서 응용분야를 위한 소재

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US202363449237P 2023-03-01 2023-03-01
US63/449,237 2023-03-01

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034374A (en) * 1996-11-08 2000-03-07 Nikon Corporation Thermal infrared sensors, imaging devices, and manufacturing methods for such sensors
US20130292789A1 (en) * 2010-04-28 2013-11-07 L-3 Communications Corporation Optically Transitioning Thermal Detector Structures
US20150116721A1 (en) * 2012-06-05 2015-04-30 President And Fellows Of Harvard College Ultra-thin optical coatings and devices and methods of using ultra-thin optical coatings
US20210025765A1 (en) * 2018-03-06 2021-01-28 Tdk Corporation Heat utilizing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034374A (en) * 1996-11-08 2000-03-07 Nikon Corporation Thermal infrared sensors, imaging devices, and manufacturing methods for such sensors
US20130292789A1 (en) * 2010-04-28 2013-11-07 L-3 Communications Corporation Optically Transitioning Thermal Detector Structures
US20150116721A1 (en) * 2012-06-05 2015-04-30 President And Fellows Of Harvard College Ultra-thin optical coatings and devices and methods of using ultra-thin optical coatings
US20210025765A1 (en) * 2018-03-06 2021-01-28 Tdk Corporation Heat utilizing device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOSHI TOYANATH, CIRINO ELI, MORLEY SOPHIE A., LEDERMAN DAVID: "Thermally induced metal-to-insulator transition in NbO2 thin films: Modulation of the transition temperature by epitaxial strain", PHYSICAL REVIEW MATERIALS, vol. 3, no. 12, 1 December 2019 (2019-12-01), XP093209791, ISSN: 2475-9953, DOI: 10.1103/PhysRevMaterials.3.124602 *

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TW202511710A (zh) 2025-03-16

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