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WO2024166789A1 - Structure semi-conductrice et son procédé de production - Google Patents

Structure semi-conductrice et son procédé de production Download PDF

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Publication number
WO2024166789A1
WO2024166789A1 PCT/JP2024/003358 JP2024003358W WO2024166789A1 WO 2024166789 A1 WO2024166789 A1 WO 2024166789A1 JP 2024003358 W JP2024003358 W JP 2024003358W WO 2024166789 A1 WO2024166789 A1 WO 2024166789A1
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WO
WIPO (PCT)
Prior art keywords
silicon
layer
substrate
semiconductor structure
fill material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/003358
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English (en)
Japanese (ja)
Inventor
靖剛 茅場
雄三 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Priority to CN202480010739.2A priority Critical patent/CN120660188A/zh
Priority to KR1020257026014A priority patent/KR20250130670A/ko
Priority to JP2024576286A priority patent/JPWO2024166789A1/ja
Publication of WO2024166789A1 publication Critical patent/WO2024166789A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4827—Materials
    • H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process

Definitions

  • This disclosure relates to a semiconductor structure and a method for manufacturing the same.
  • Patent Document 1 discloses a semiconductor structure including a die set provided on a wiring layer, and an inorganic gap fill material including silicon provided on the wiring layer and surrounding the periphery of the die set.
  • Patent document 1 U.S. Patent Publication No. 2022/0013504
  • hybrid bonding is being developed as a high-density bonding technology to increase data transfer per unit area.
  • hybrid bonding refers to a type of bonding in which electrodes are bonded to each other and insulating films are bonded to each other by bringing two exposed surfaces of an electrode and an insulating material into contact with each other.
  • the film stress of the inorganic gap fill material may cause warping of the semiconductor structure.
  • An object of one aspect of the present disclosure is to provide a semiconductor structure including a semiconductor substrate and a plurality of silicon dies bonded by hybrid bonding, and a gap fill material, the semiconductor structure having reduced warpage, and a method for manufacturing the same.
  • a semiconductor substrate a plurality of silicon dies disposed on the semiconductor substrate and hybrid-bonded to the semiconductor substrate; an organic gap fill material disposed between the silicon dies on the semiconductor substrate; 1.
  • a semiconductor structure comprising: ⁇ 2> The semiconductor substrate and the plurality of silicon dies each include a bonding layer including an insulating layer and an electrode, The bonding layer of the semiconductor substrate and the bonding layers of the silicon dies are hybrid-bonded.
  • the insulating layer includes at least one selected from the group consisting of a SiO 2 layer, a SiCN layer, a SiN layer, and a resin layer containing a siloxane bond.
  • the organic gap fill material includes at least one selected from the group consisting of polyimide, polyamide, polyamideimide, maleimide resin, parylene, polyarylene ether polyimide, polybenzoxazole, benzocyclobutene resin, and epoxy resin.
  • ⁇ 5> The semiconductor structure according to any one of ⁇ 1> to ⁇ 4>, wherein the organic gap fill material contains a resin having a siloxane bond.
  • the organic gap fill material contains a resin having a siloxane bond.
  • ⁇ 6> The semiconductor structure according to any one of ⁇ 1> to ⁇ 5>, further comprising a silicon-containing layer interposed between at least the organic gap-fill material and the semiconductor substrate.
  • the silicon-containing layer includes at least one selected from the group consisting of a SiO 2 layer, a SiCN layer, a SiN layer, and a resin layer containing a siloxane bond.
  • ⁇ 8> A method for producing a semiconductor structure according to any one of ⁇ 1> to ⁇ 5>, Temporarily fixing a plurality of silicon dies on a first temporary fixing substrate; forming an organic gap fill material on a side of the first temporary fixing substrate to which the plurality of silicon dies are temporarily fixed, thereby filling the organic gap fill material between the plurality of silicon dies; a step of temporarily fixing a second temporary fixing substrate to the side of the first temporary fixing substrate on which the organic gap fill material is formed, thereby obtaining a laminate X1; removing the first temporary fixing substrate from the stacked body X1 to obtain a stacked body X2 in which the plurality of silicon dies are exposed; cleaning and/or polishing exposed surfaces of the silicon dies in the stack X2; a step of hybrid-bonding a semiconductor substrate to the exposed surfaces of the plurality of silicon dies that have been subjected to at least one of the cleaning and polishing to obtain a stack X3; removing the second temporary fixing substrate from the stack
  • ⁇ 9> The method for manufacturing a semiconductor structure according to ⁇ 8>, further comprising the step of forming a silicon-containing layer on a side of the first temporary fixing substrate to which the plurality of silicon dies are temporarily fixed and covering at least an exposed surface of the first temporary fixing substrate with the silicon-containing layer, after the step of temporarily fixing the plurality of silicon dies on the first temporary fixing substrate and before the step of filling between the plurality of silicon dies with the organic gap fill material.
  • a semiconductor structure includes a semiconductor substrate and a plurality of silicon dies bonded by hybrid bonding, and a gap fill material, and that suppresses warping, and a method for manufacturing the same is provided.
  • 1 is a schematic cross-sectional view illustrating an example of a semiconductor structure of the present disclosure.
  • 1 is a schematic flow diagram illustrating an example of a method for manufacturing a semiconductor structure according to the present disclosure.
  • 1 is a schematic flow diagram illustrating an example of a method for manufacturing a semiconductor structure according to the present disclosure.
  • 1 is a schematic flow diagram illustrating an example of a method for manufacturing a semiconductor structure according to the present disclosure.
  • 1 is a schematic flow diagram illustrating an example of a method for manufacturing a semiconductor structure according to the present disclosure.
  • 1 is a schematic flow diagram illustrating an example of a method for manufacturing a semiconductor structure according to the present disclosure.
  • 1 is a schematic flow diagram illustrating an example of a method for manufacturing a semiconductor structure according to the present disclosure.
  • 1 is a schematic flow diagram illustrating an example of a method for manufacturing a semiconductor structure according to the present disclosure.
  • 1 is a schematic flow diagram illustrating an example of a method for manufacturing a semiconductor structure according to the present
  • a numerical range expressed using “to” means a range that includes the numerical values before and after "to” as the lower and upper limits.
  • the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages.
  • the upper or lower limit value of the numerical range may be replaced with a value shown in the examples.
  • the semiconductor structure of the present disclosure comprises: A semiconductor substrate; a plurality of silicon dies disposed on a semiconductor substrate and hybrid-bonded to the semiconductor substrate; an organic gap fill material disposed between a plurality of silicon dies on a semiconductor substrate; Equipped with.
  • Patent Document 1 U.S. Patent Publication No. 2022/0013504
  • the semiconductor structure of the present disclosure uses an organic gap fill material as the gap fill material, thereby suppressing the problem of the semiconductor structure warping due to the film stress of the inorganic gap fill material.
  • the semiconductor structure disclosed herein employs an organic gap fill material as the gap fill material, and thus has the advantage that it can be formed quickly and easily by a wet process such as a coating method or a printing method, compared to forming an inorganic gap fill material by a vapor phase growth method (i.e., a dry process) such as CVD (Chemical Vapor Deposition).
  • a wet process such as a coating method or a printing method
  • CVD Chemical Vapor Deposition
  • an example semiconductor structure 100 of the present disclosure includes: A semiconductor substrate 10; a plurality of silicon dies 20 disposed on a semiconductor substrate 10 and hybrid-bonded to the semiconductor substrate 10; an organic gap fill material 30 filled between a plurality of silicon dies on a semiconductor substrate; Equipped with.
  • the semiconductor structure 100 further comprises a silicon-containing layer 32 interposed between at least the organic gap-fill material 30 and the semiconductor substrate 10.
  • the silicon-containing layer 32 is interposed between the organic gap-fill material 30 and the semiconductor substrate 10, and between the organic gap-fill material 30 and the silicon die 20.
  • the silicon-containing layer 32 is not essential from the viewpoint of suppressing warpage of the semiconductor structure, and may be omitted.
  • the semiconductor substrate 10 is A substrate body 12; A bonding layer 14 provided on one surface side of the substrate body 12; a through electrode 16 electrically connected to the bonding layer 14 and penetrating the substrate body 12; Includes.
  • the substrate body 12 in the semiconductor substrate 10 is not particularly limited and may be any commonly used substrate, one example of which is a silicon substrate. Specific examples of the substrate body 12 will be described later.
  • An integrated circuit (not shown) is formed inside the substrate body 12 of the semiconductor substrate 10 .
  • the bonding layer 14 in the semiconductor substrate 10 includes an insulating layer and an electrode that penetrates the insulating layer (not shown).
  • the integrated circuit in the substrate body 12 is connected to the electrodes in the bonding layer 14.
  • the silicon die 20 is A die body portion 22; A bonding layer 24 provided on one surface side of the die body 22; Includes.
  • the bonding layer 24 in the silicon die 20 includes an insulating layer and an electrode penetrating the insulating layer (not shown). These structures are common structures and therefore are not shown in the drawings.
  • a semiconductor substrate 10 and a plurality of silicon dies 20 are hybrid-bonded. More specifically, a bonding layer 14 in the semiconductor substrate 10 and a bonding layer 24 in the silicon dies 20 are hybrid-bonded. As this hybrid joint, a known hybrid joint can be applied.
  • the semiconductor structure 100 comprises an organic gap-fill material 30 filled between multiple silicon dies 20 on a semiconductor substrate 10 . Therefore, compared to when the gap fill material is an inorganic gap fill material (for example, the aforementioned Patent Document 1 (U.S. Patent Publication No. 2022/0013504)), the film stress of the gap fill material can be reduced, and therefore the warpage of the entire semiconductor structure can be reduced. As a result of being able to reduce the warpage of the entire semiconductor structure, for example, bonding defects and/or misalignment of bonded substrates due to warpage can be reduced.
  • the gap fill material is an inorganic gap fill material (for example, the aforementioned Patent Document 1 (U.S. Patent Publication No. 2022/0013504)
  • the film stress of the gap fill material can be reduced, and therefore the warpage of the entire semiconductor structure can be reduced.
  • bonding defects and/or misalignment of bonded substrates due to warpage can be reduced.
  • the semiconductor structure 100 further comprises a silicon-containing layer 32 interposed between at least the organic gap-fill material 30 and the semiconductor substrate 10 .
  • the silicon-containing layer 32 is not essential from the viewpoint of suppressing warpage of the semiconductor structure.
  • the semiconductor structure 100 includes the silicon-containing layer 32, the adhesion between the organic gap-fill material 30 and the semiconductor substrate 10 is improved.
  • the silicon-containing layer 32 is interposed between the organic gap-fill material 30 and the semiconductor substrate 10, and between the organic gap-fill material 30 and the side surfaces of the multiple silicon dies 20. This improves the adhesion between the organic gap-fill material 30 and the semiconductor substrate 10, and between the organic gap-fill material 30 and the multiple silicon dies 20 in the semiconductor structure 100.
  • a recess is formed by the side surfaces of the multiple silicon dies 20 and the surface of the semiconductor substrate 10.
  • the wall surfaces of the recess i.e., the side surfaces of the multiple silicon dies 20 and the surface of the semiconductor substrate 10.
  • the recess whose wall surfaces are covered with the silicon-containing layer 32 is filled with an organic gap-fill material 30.
  • the silicon-containing layer will be described in detail below.
  • Method X One embodiment of a method for manufacturing a semiconductor structure (Method X)> There are no particular limitations on the method for fabricating the semiconductor structure of the present disclosure.
  • One embodiment of a method for producing a semiconductor structure according to the present disclosure is the following "Production Method X.”
  • the manufacturing method X is Temporarily fixing a plurality of silicon dies on a first temporary fixing substrate; forming an organic gap fill material on a side of a first temporary fixing substrate on which the plurality of silicon dies are temporarily fixed, thereby filling the organic gap fill material between the plurality of silicon dies; a step of temporarily fixing a second temporary fixing substrate to the side of the first temporary fixing substrate on which the organic gap fill material is formed, to obtain a laminate X1; removing the first temporary fixing substrate from the laminate X1 to obtain a laminate X2 in which the silicon die is exposed; cleaning and/or polishing exposed surfaces of the silicon dies in the stack X2; a step of hybrid-bonding a semiconductor substrate to exposed surfaces of the plurality of silicon dies that have been subjected to at least one of cleaning and polishing to obtain a stack X3; A step of obtaining a semiconductor structure by removing the second temporary fixing substrate from the laminate X3; Includes.
  • the manufacturing method X may further include, after the step of temporarily fixing the multiple silicon dies on the first temporary fixing substrate and before the step of filling the gaps between the multiple silicon dies with an organic gap fill material, a step of forming a silicon-containing layer on the side of the first temporary fixing substrate where the multiple silicon dies are temporarily fixed, thereby covering at least the exposed surface of the first temporary fixing substrate with the silicon-containing layer.
  • a semiconductor structure eg, semiconductor structure 100
  • a silicon-containing layer eg, silicon-containing layer 32
  • the silicon-containing layer may be formed to cover at least the exposed surface of the first temporary fixing substrate and the side surface of the silicon die. This allows the manufacture of a semiconductor structure having a silicon-containing layer between the organic gap fill material and the semiconductor substrate, and between the organic gap fill material and the silicon die (see Manufacturing Method X1 described below).
  • Manufacturing method X1 is a method including a step of forming a silicon-containing layer. The step of forming a silicon-containing layer may be omitted.
  • the manufacturing method X1 includes a step A shown in FIG. 2A.
  • step A is a step of temporarily fixing a plurality of silicon dies 20 onto a first temporary fixing substrate 40 .
  • the first temporary fixing substrate 40 may be, for example, a silicon substrate, a glass substrate, a resin substrate, or the like.
  • Temporary fixation can be, for example: Methods using adhesives such as acrylic and epoxy polymers; A method using a heat-resistant resin such as polyimide, polyamideimide, polymaleimide, or siloxane polymer; Direct bonding of SiO2 to SiO2 ; This can be done by, etc.
  • the first temporary fixing substrate 40 is to be removed (i.e., peeled off) during the manufacturing method X1. For this reason, a surface treatment may be applied to the surface of the first fixing substrate 40 facing the multiple silicon dies 20 in order to facilitate peeling from the multiple silicon dies 20.
  • the manufacturing method X1 includes a step B shown in FIG. 2B.
  • step B is a step of forming a silicon-containing layer 32A on the side of the first temporary fixing substrate 40 on which the multiple silicon dies 20 are temporarily fixed, thereby covering at least the exposed surface of the first temporary fixing substrate 40 with the silicon-containing layer 32A.
  • the silicon-containing layer 32A is formed so as to cover the exposed surface of the first temporary fixing substrate 40 and the upper and side surfaces of the multiple silicon dies 20.
  • the silicon-containing layer 32A on the upper surfaces of the multiple silicon dies 20 is finally removed by polishing.
  • the silicon-containing layer 32A When the silicon-containing layer 32A is a SiO 2 film, the silicon-containing layer 32A can be formed by a vapor phase growth method such as sputtering, CVD (Chemical Vapor Deposition), or ALD (Atomic Layer Deposition).
  • the silicon-containing layer 32A is a resin film containing a SiO structure
  • the silicon-containing layer 32A can be formed by a wet process such as a coating method (e.g., a method including coating and heating), a printing method, etc.
  • a specific example of a method for forming the silicon-containing layer 32A is the same as a specific example of a method for forming an organic gap-fill material, which will be described later.
  • Step B may be omitted.
  • Step C Process X1 includes step C shown in FIG. 2C. As shown in FIG. 2C, step C is a step of forming an organic gap fill material 30A on the side of the first temporary fixing substrate 40 on which the multiple silicon dies 20 are temporarily fixed, thereby filling the organic gap fill material 30A between the multiple silicon dies 20.
  • the organic gap fill material 30A can be formed by a wet process such as spray coating, spin coating, screen printing, squeegeeing, inkjet printing, etc.
  • Step D Manufacturing method X1 includes step D shown in FIG. 2D.
  • step D is a step of polishing the side of the first temporary fixing substrate 40 on which the organic gap fill material 30A is formed until the top surfaces of the multiple silicon dies 20 are exposed. This polishing removes the organic gap-fill material 30A and the silicon-containing layer 32A on the top surfaces of the plurality of silicon dies 20. As a result, the remaining organic gap-fill material and silicon-containing layer are the organic gap-fill material 30 and the silicon-containing layer 32. Polishing can be carried out in accordance with a conventional method such as mechanical polishing, chemical polishing, or chemical mechanical polishing.
  • the organic gap fill material 30A and the silicon-containing layer 32A may not be formed on the upper surfaces of the multiple silicon dies 20.
  • the organic gap fill material 30 and the silicon-containing layer 32 may be selectively formed on the exposed surface of the first temporary fixing substrate 40 and the side surface of the silicon die 20.
  • step D can be omitted.
  • Step E Manufacturing method X1 includes step E shown in FIG. 2E. 2E , in step E, a second temporary fixing substrate 42 is temporarily fixed to the side of the first temporary fixing substrate 40 on which the organic gap fill material 30 is formed, to obtain a laminate X101.
  • the laminate X101 is an example of the laminate X1 in the manufacturing method X.
  • the temporary fixing can be carried out using, for example, an adhesive.
  • the second temporary fixing substrate 42 is to be removed (i.e., peeled off) during the manufacturing method X1. For this reason, a surface treatment may be applied to the surface of the second fixing substrate 42 facing the multiple silicon dies 20 in order to facilitate peeling from the multiple silicon dies 20.
  • Step F Manufacturing method X1 includes step F shown in FIG. 2F. As shown in FIG. 2F, step F is a step of removing the first temporary fixing substrate 40 from the stacked body X101 to obtain a stacked body X102 in which the multiple silicon dies 20 are exposed.
  • the laminate X102 is an example of the laminate X2 in the manufacturing method X.
  • the first temporary fixing substrate 40 can be removed, for example, by the following method.
  • the first temporary fixing substrate 40 can be removed by, for example, thermal foaming, mechanical peeling, thermal sliding, laser peeling, or the like.
  • the first temporary fixing substrate 40 is temporarily fixed using a heat-resistant resin such as polyimide, polyamideimide, polymaleimide, or siloxane polymer
  • the first temporary fixing substrate 40 can be removed by, for example, laser peeling, mechanical peeling, thermal sliding, or the like.
  • the first temporary fixing substrate 40 is temporarily fixed by direct bonding between SiO 2 films
  • the first temporary fixing substrate 40 can be removed by, for example, laser peeling using infrared rays or the like.
  • Step F2 Manufacturing method X1 includes step F2 (not shown).
  • Step F2 is a step of performing at least one of cleaning and polishing on the exposed surfaces of the multiple silicon dies 20 in the stack X102 (i.e., the exposed surfaces of the bonding layers 24).
  • the cleaning and/or polishing may be performed on the entire stack X102, including the exposed surfaces of the multiple silicon dies 20 (i.e., the exposed surfaces of the bonding layer 24).
  • the cleaning method is not particularly limited, and examples thereof include plasma cleaning, two-fluid cleaning, ultrasonic cleaning, cleaning with a cleaning liquid, and the like.
  • the polishing method is not particularly limited, and examples thereof include CMP (Chemical Mechanical Polishing).
  • step G is a step of hybrid-bonding a semiconductor substrate 10 to exposed surfaces (i.e., exposed surfaces of the bonding layer 24) of multiple silicon dies 20 that have been subjected to at least one of cleaning and polishing, to obtain a stacked body X103.
  • the laminate X103 is an example of the laminate X3 in the manufacturing method X.
  • the semiconductor substrate 10 is a semiconductor substrate including a substrate body 12, a bonding layer 14 provided on one surface side of the substrate body 12, and a through electrode 16 electrically connected to the bonding layer 14 and penetrating the substrate body 12, as described in the example shown in FIG. 1.
  • the bonding layers 24 of the multiple silicon dies 20 and the bonding layer 14 of the semiconductor substrate 10 are hybrid-bonded.
  • Step H is a step of obtaining the semiconductor structure 100 by removing the second temporary fixing substrate 42 from the stacked body X103 in FIG. 2G. Step H results in the semiconductor structure 100 shown in FIG. 2H and in FIG.
  • the second temporary fixing substrate 42 can be removed in the same manner as the first temporary fixing substrate 40 .
  • a semiconductor structure of the present disclosure includes a semiconductor substrate (eg, semiconductor substrate 10).
  • the semiconductor substrate may include a substrate body (e.g., substrate body 12) and a bonding layer (e.g., bonding layer 14) provided on one surface of the substrate body.
  • the bonding layer may be disposed on both surfaces of the substrate body.
  • the material of the substrate body is not particularly limited, and may be any material that is commonly used as a semiconductor substrate.
  • the substrate body preferably contains at least one element selected from the group consisting of Si, Al, Ti, Zr, Hf, Fe, Ni, Cu, Ag, Au, Ga, Ge, Sn, Pd, As, Pt, Mg, In, Ta and Nb.
  • the material of the substrate body is, for example: Semiconductors (e.g., Si, InP, GaN, GaAs, InGaAs, InGaAlAs, SiC, etc.); oxides, carbides, or nitrides (e.g., borosilicate glass (Pyrex), quartz glass ( SiO2 ), sapphire, ZrO2 , Si3N4 , AlN, etc.); Piezoelectric or dielectric materials (e.g.
  • Semiconductors e.g., Si, InP, GaN, GaAs, InGaAs, InGaAlAs, SiC, etc.
  • oxides, carbides, or nitrides e.g., borosilicate glass (Pyrex), quartz glass ( SiO2 ), sapphire, ZrO2 , Si3N4 , AlN, etc.
  • Piezoelectric or dielectric materials e.g.
  • the substrate body may contain only one of these materials, or may contain two or more of them.
  • the substrate body is preferably a silicon substrate, a GaAs substrate, a SiC substrate, a diamond substrate, a glass substrate, or a resin substrate, and is typically a silicon substrate.
  • the substrate body may have a multi-layer structure.
  • the bonding layer may include an insulating layer and an electrode (eg, a Cu electrode) that penetrates the insulating layer.
  • the insulating layer in the bonding layer can be formed by a vapor phase deposition method such as sputtering or CVD.
  • the electrodes in the bonding layer can be formed by a known manufacturing method such as a damascene process or a semi-additive process.
  • the insulating layer in the bonding layer preferably includes at least one selected from the group consisting of a SiO 2 layer, a SiCN layer, a SiN layer, and a resin layer containing a siloxane bond.
  • the SiO 2 layer, the SiCN layer, and the SiN layer serving as the insulating layer can be formed by a vapor phase growth method such as sputtering, chemical vapor deposition (CVD), or atomic layer deposition (ALD).
  • a vapor phase growth method such as sputtering, chemical vapor deposition (CVD), or atomic layer deposition (ALD).
  • Examples of the material of the resin layer containing siloxane bonds as the insulating layer include the same materials as the "resin layer containing siloxane bonds" as the "silicon-containing layer” described later.
  • examples of the method of forming the resin layer containing siloxane bonds as the insulating layer examples of the method of forming the "resin layer containing siloxane bonds" as the "silicon-containing layer” described later can be appropriately referred to.
  • the semiconductor substrate may include a through electrode that penetrates a substrate body.
  • the through electrode is not particularly limited, and any known through electrode can be used.
  • a semiconductor structure of the present disclosure includes multiple silicon dies (eg, silicon die 20) hybrid-bonded onto a semiconductor substrate (eg, semiconductor substrate 10).
  • a semiconductor substrate eg, semiconductor substrate 10
  • the silicon die a normal silicon die can be used, which is obtained by forming an integrated circuit on a silicon substrate (for example, a silicon wafer) and cutting it into chips.
  • the silicon die may include a bonding layer.
  • a preferred embodiment of the bonding layer in the silicon die is similar to a preferred embodiment of the bonding layer in the semiconductor substrate.
  • a preferred embodiment of the semiconductor structure of the present disclosure is one in which the semiconductor substrate and the multiple silicon dies each have a bonding layer including an insulating layer and an electrode, and the bonding layer in the semiconductor substrate and the bonding layer in the multiple silicon dies are hybrid-bonded.
  • the spacing between the multiple silicon dies is, for example, preferably 0.1 ⁇ m to 100,000 ⁇ m, more preferably 1 ⁇ m to 10,000 ⁇ m, and even more preferably 50 ⁇ m to 1,000 ⁇ m.
  • the thickness of the silicon die is preferably 5 ⁇ m to 700 ⁇ m, more preferably 10 ⁇ m to 300 ⁇ m, and even more preferably 15 ⁇ m to 100 ⁇ m.
  • Hybrid bonding can be implemented by bonding an insulating layer and an electrode on a bonding layer of a silicon die with an insulating layer and an electrode on a bonding layer of a semiconductor substrate.
  • a known hybrid joint described in the aforementioned Patent Document 1 US Patent Publication No. 2022/0013504 can be used.
  • a semiconductor structure (e.g., semiconductor structure 100) of the present disclosure includes an organic gap-fill material (e.g., organic gap-fill material 30) filled between multiple silicon dies (e.g., silicon die 20) on a semiconductor substrate (e.g., semiconductor substrate 10).
  • organic gap-fill material e.g., organic gap-fill material 30
  • the organic gap fill material contains at least one organic material (preferably a resin, more preferably a heat-resistant resin).
  • the glass transition temperature of the organic material in the organic gap fill material is preferably 110°C to 300°C, more preferably 120°C to 300°C, and even more preferably 150°C to 300°C.
  • the glass transition temperature can be measured by the following method. That is, a test piece of an organic material having a width of 4 mm and a length of 20 mm is prepared.
  • the glass transition temperature of this test piece is measured by TMA using a thermal analyzer (TMA-50) manufactured by Shimadzu Corporation under the measurement conditions of a temperature range of 25°C to 350°C, a heating rate of 5°C/min, a load of 14 g/ mm2 , and a tensile mode, and the glass transition temperature (Tg) can be determined from the inflection point of the obtained temperature-test piece elongation curve.
  • TMA-50 thermal analyzer manufactured by Shimadzu Corporation under the measurement conditions of a temperature range of 25°C to 350°C, a heating rate of 5°C/min, a load of 14 g/ mm2 , and a tensile mode
  • resins in organic gap fill materials include polyimide, polyamide, polyamideimide, maleimide resin, parylene, polyarylene ether, polybenzoxazole, benzocyclobutene resin, epoxy resin, etc.
  • the resin in the organic gap fill material may include a resin containing a siloxane bond.
  • the resin containing a siloxane bond include the same resins as those contained in the "resin layer containing a siloxane bond as a silicon-containing layer" described below.
  • the organic gap fill material including the resin can be formed by a wet process such as a coating method (eg, a method including coating and heating) or a printing method.
  • a coating liquid for forming an organic gap fill material containing a resin precursor is applied to the side of the semiconductor substrate on which the silicon-containing layer is formed, and heated to obtain an organic gap fill material.
  • the purpose of the heating is to dry the solvent in the coating liquid and to cure the resin precursor in the coating liquid to obtain a resin. Heating for the purpose of drying and heating for the purpose of curing the resin precursor may be carried out separately.
  • the coating can be carried out by a known coating method such as spin coating, slit coating, spray coating, screen printing, squeegeeing, or inkjet printing.
  • An example of a coating liquid for forming an organic gap fill material is a solution containing a resin material.
  • a polar solvent (D) It is preferred that the compound contains
  • Compound (A) is a compound having a cationic functional group containing at least one of a primary nitrogen atom and a secondary nitrogen atom, and having a weight average molecular weight of 90 to 400,000.
  • the cationic functional group is not particularly limited as long as it is a functional group that can bear a positive charge and contains at least one of a primary nitrogen atom and a secondary nitrogen atom.
  • compound (A) may contain a tertiary nitrogen atom in addition to the primary and secondary nitrogen atoms.
  • a "primary nitrogen atom” refers to a nitrogen atom that is bonded to only two hydrogen atoms and one atom other than a hydrogen atom (e.g., a nitrogen atom contained in a primary amino group ( -NH2 group)), or a nitrogen atom that is bonded to only three hydrogen atoms and one atom other than a hydrogen atom (cation).
  • secondary nitrogen atom refers to a nitrogen atom bonded to only one hydrogen atom and two atoms other than hydrogen atoms (i.e., a nitrogen atom contained in a functional group represented by the following formula (a)), or a nitrogen atom (cation) bonded to only two hydrogen atoms and two atoms other than hydrogen atoms.
  • tertiary nitrogen atom refers to a nitrogen atom bonded to only three atoms other than hydrogen atoms (i.e., a nitrogen atom that is a functional group represented by the following formula (b)), or a nitrogen atom (cation) bonded to one hydrogen atom and only three atoms other than hydrogen atoms.
  • the functional group represented by formula (a) may be a functional group constituting a part of a secondary amino group (-NHR a group; here, R a represents an alkyl group), or may be a divalent linking group contained in the skeleton of a polymer.
  • the functional group represented by formula (b) may be a functional group constituting a part of a tertiary amino group (-NR b R c group; here, R b and R c each independently represent an alkyl group), or may be a trivalent linking group contained in the skeleton of a polymer.
  • the weight average molecular weight of compound (A) is 90 or more and 400,000 or less.
  • Examples of compound (A) include aliphatic amines, compounds having a siloxane bond (Si-O bond) and an amino group, and amine compounds having a ring structure without an Si-O bond in the molecule.
  • the weight average molecular weight is preferably 10,000 or more and 200,000 or less.
  • the weight average molecular weight is preferably 130 or more and 10,000 or less, more preferably 130 or more and 5,000 or less, and even more preferably 130 or more and 2,000 or less.
  • the weight average molecular weight is preferably 90 or more and 600 or less.
  • the weight average molecular weight refers to the weight average molecular weight in terms of polyethylene glycol, measured by GPC (Gel Permeation Chromatography) for a substance other than the monomer. Specifically, the weight average molecular weight is calculated by detecting the refractive index at a flow rate of 1.0 mL/min using an aqueous solution of sodium nitrate having a concentration of 0.1 mol/L as a developing solvent, a Shodex DET RI-101 analyzer, and two types of analytical columns (TSKgel G6000PWXL-CP and TSKgel G3000PWXL-CP, manufactured by Tosoh Corporation), and using polyethylene glycol/polyethylene oxide as standards with analytical software (Empower3, manufactured by Waters Corporation).
  • GPC Gel Permeation Chromatography
  • the compound (A) may further have an anionic functional group, a nonionic functional group, or the like, as necessary.
  • the nonionic functional group may be a hydrogen bond accepting group or a hydrogen bond donating group.
  • Examples of the nonionic functional group include a hydroxyl group, a carbonyl group, and an ether group (-O-).
  • the anionic functional group is not particularly limited as long as it is a functional group that can bear a negative charge.
  • examples of the anionic functional group include a carboxylic acid group, a sulfonic acid group, and a sulfate group.
  • Examples of compound (A) include aliphatic amines, and more specifically, polyalkyleneimines, which are polymers of alkyleneimines such as ethyleneimine, propyleneimine, butyleneimine, pentyleneimine, hexyleneimine, heptyleneimine, octyleneimine, trimethyleneimine, tetramethyleneimine, pentamethyleneimine, hexamethyleneimine, and octamethyleneimine; polyallylamine; and polyacrylamide.
  • polyalkyleneimines which are polymers of alkyleneimines such as ethyleneimine, propyleneimine, butyleneimine, pentyleneimine, hexyleneimine, heptyleneimine, octyleneimine, trimethyleneimine, tetramethyleneimine, pentamethyleneimine, hexamethyleneimine, and octamethyleneimine
  • polyallylamine and polyacrylamide.
  • Polyethyleneimine can be produced by known methods such as those described in JP-B-43-8828, JP-B-49-33120, JP-A-2001-213958, and WO 2010/137711.
  • Polyalkyleneimines other than polyethyleneimine can also be produced by the same methods as polyethyleneimine.
  • Compound (A) is also preferably a derivative of the above-mentioned polyalkyleneimine (polyalkyleneimine derivative; particularly preferably a polyethyleneimine derivative).
  • the polyalkyleneimine derivative is not particularly limited as long as it is a compound that can be produced using the above-mentioned polyalkyleneimine.
  • examples of the polyalkyleneimine derivative include polyalkyleneimine derivatives obtained by introducing an alkyl group (preferably an alkyl group having 1 to 10 carbon atoms), an aryl group, or the like into a polyalkyleneimine, and polyalkyleneimine derivatives obtained by introducing a crosslinkable group such as a hydroxyl group into a polyalkyleneimine.
  • These polyalkyleneimine derivatives can be produced by a method generally used using the above-mentioned polyalkyleneimines, specifically, for example, the method described in JP-A-6-016809.
  • polyalkyleneimine derivative a highly branched polyalkyleneimine obtained by reacting a polyalkyleneimine with a monomer containing a cationic functional group to increase the branching degree of the polyalkyleneimine is also preferred.
  • Examples of methods for obtaining a highly branched polyalkyleneimine include a method of reacting a polyalkyleneimine having a plurality of secondary nitrogen atoms in the skeleton with a cationic functional group-containing monomer to replace at least one of the plurality of secondary nitrogen atoms with the cationic functional group-containing monomer, and a method of reacting a polyalkyleneimine having a plurality of primary nitrogen atoms at its terminals with a cationic functional group-containing monomer to replace at least one of the plurality of primary nitrogen atoms with the cationic functional group-containing monomer.
  • Examples of the cationic functional group introduced to improve the degree of branching include an aminoethyl group, an aminopropyl group, a diaminopropyl group, an aminobutyl group, a diaminobutyl group, and a triaminobutyl group. From the viewpoints of decreasing the cationic functional group equivalent and increasing the cationic functional group density, the aminoethyl group is preferred.
  • polyethyleneimine and its derivatives may be commercially available.
  • polyethyleneimine and its derivatives may be appropriately selected and used from those commercially available from Nippon Shokubai Co., Ltd., BASF, MP-Biomedicals, etc.
  • Examples of the compound (A) include the above-mentioned aliphatic amines as well as compounds having a Si—O bond and an amino group.
  • the compound having a Si--O bond and an amino group will be described later in the explanation of the silicon-containing layer.
  • Compound (A) also includes an amine compound having a ring structure.
  • amine compounds having a ring structure and a weight average molecular weight of 90 to 600 are preferred.
  • examples of amine compounds having a ring structure and a weight average molecular weight of 90 to 600 include alicyclic amines, aromatic ring amines, and heterocyclic (heterocyclic) amines.
  • a plurality of ring structures may be present in the molecule, and the plurality of ring structures may be the same or different.
  • a compound having an aromatic ring is more preferred because it is easy to obtain a thermally more stable compound.
  • a compound having a primary amino group is preferred, since it is easy to form a thermal crosslinked structure such as amide, amideimide, imide, etc. together with the crosslinking agent (B) and can enhance heat resistance.
  • a diamine compound having two primary amino groups, a triamine compound having three primary amino groups, etc. are preferred, since it is easy to increase the number of thermal crosslinked structures such as amide, amideimide, imide, etc. together with the crosslinking agent (B) and can further enhance heat resistance.
  • Examples of the alicyclic amine include cyclohexylamine and dimethylaminocyclohexane.
  • aromatic ring amines include diaminodiphenyl ether, xylylene diamine (preferably paraxylylene diamine), diaminobenzene, diaminotoluene, methylene dianiline, dimethyldiaminobiphenyl, bis(trifluoromethyl)diaminobiphenyl, diaminobenzophenone, diaminobenzanilide, bis(aminophenyl)fluorene, bis(aminophenoxy)benzene, bis(aminophenoxy)biphenyl, dicarboxydiaminodiphenylmethane, diaminoresorcin, dihydroxybenzidine, diaminobenzidine, 1,3,5-triaminophenoxybenzene, 2,2'-dimethylbenzidine, tris(4-aminophenyl)amine,
  • heterocycle of the heterocyclic amine examples include a heterocycle containing a sulfur atom as a heteroatom (e.g., a thiophene ring), and a heterocycle containing a nitrogen atom as a heteroatom (e.g., a 5-membered ring such as a pyrrole ring, a pyrrolidine ring, a pyrazole ring, an imidazole ring, or a triazole ring; a 6-membered ring such as an isocyanuric ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a piperidine ring, a piperazine ring, or a triazine ring; and a condensed ring such as an indole ring, an indoline ring, a quinoline ring, an acridine ring, a naphthy
  • heterocyclic amines having a nitrogen-containing heterocycle include melamine, ammeline, melam, melem, and tris(4-aminophenyl)amine.
  • examples of amine compounds having both a heterocycle and an aromatic ring include N2,N4,N6-tris(4-aminophenyl)-1,3,5-triazine-2,4,6-triamine.
  • compound (A) Since compound (A) has a primary or secondary amino group, it can strongly bond the substrates to each other by electrostatic interaction with functional groups such as hydroxyl groups, epoxy groups, carboxy groups, amino groups, and mercapto groups that may be present on the surfaces of the first substrate and the second substrate, or by forming a close covalent bond with the functional groups. In addition, since the compound (A) has a primary or secondary amino group, it is easily dissolved in a polar solvent (D) described below.
  • D polar solvent
  • the affinity with the hydrophilic surface of a substrate such as a silicon substrate is increased, so that a smooth film is easily formed, and the thickness of the joint for hybrid-joining a plurality of substrate laminates can be reduced.
  • compound (A) has a cationic functional group containing at least one of a primary nitrogen atom and a secondary nitrogen atom.
  • the proportion of primary nitrogen atoms in the total nitrogen atoms in compound (A) is preferably 20 mol% or more, more preferably 25 mol% or more, and even more preferably 30 mol% or more.
  • Compound (A) may also have a cationic functional group that contains a primary nitrogen atom and does not contain any nitrogen atoms other than the primary nitrogen atom (e.g., secondary nitrogen atom, tertiary nitrogen atom).
  • the ratio of secondary nitrogen atoms to the total nitrogen atoms in compound (A) is preferably 5 mol % or more and 50 mol % or less, and more preferably 10 mol % or more and 45 mol % or less.
  • compound (A) may contain a tertiary nitrogen atom in addition to a primary nitrogen atom and a secondary nitrogen atom.
  • the ratio of the tertiary nitrogen atoms to the total nitrogen atoms in compound (A) is preferably 20 mol % or more and 50 mol % or less, and more preferably 25 mol % or more and 45 mol % or less.
  • the content of the component derived from compound (A) in the joint is not particularly limited, and can be, for example, 1% by mass or more and 82% by mass or less with respect to the entire joint, preferably 5% by mass or more and 82% by mass or less, and more preferably 13% by mass or more and 82% by mass or less.
  • the crosslinking agent (B) is a compound having a weight average molecular weight of 200 or more and 600 or less. Preferably, it is a compound having a weight average molecular weight of 200 or more and 400 or less.
  • the crosslinking agent (B) preferably has a ring structure in the molecule.
  • the ring structure include an alicyclic structure and an aromatic ring structure.
  • the crosslinking agent (B) may also have multiple ring structures in the molecule, and the multiple ring structures may be the same or different.
  • Examples of the alicyclic structure include alicyclic structures having 3 to 8 carbon atoms, preferably alicyclic structures having 4 to 6 carbon atoms, and the ring structure may be saturated or unsaturated. More specifically, examples of the alicyclic structure include saturated alicyclic structures such as a cyclopropane ring, a cyclobutane ring, a cyclopentane ring, a cyclohexane ring, a cycloheptane ring, and a cyclooctane ring; and unsaturated alicyclic structures such as a cyclopropene ring, a cyclobutene ring, a cyclopentene ring, a cyclohexene ring, a cycloheptene ring, and a cyclooctene ring.
  • saturated alicyclic structures such as a cyclopropane ring, a cyclobutane ring
  • the aromatic ring structure is not particularly limited as long as it is a ring structure that exhibits aromaticity, and examples thereof include benzene-based aromatic rings such as a benzene ring, a naphthalene ring, an anthracene ring, and a perylene ring, aromatic heterocycles such as a pyridine ring and a thiophene ring, and non-benzene-based aromatic rings such as an indene ring and an azulene ring.
  • benzene-based aromatic rings such as a benzene ring, a naphthalene ring, an anthracene ring, and a perylene ring
  • aromatic heterocycles such as a pyridine ring and a thiophene ring
  • non-benzene-based aromatic rings such as an indene ring and an azulene ring.
  • the ring structure that the crosslinking agent (B) has in the molecule is, for example, preferably at least one selected from the group consisting of a cyclobutane ring, a cyclopentane ring, a cyclohexane ring, a benzene ring, and a naphthalene ring, and from the viewpoint of further increasing the heat resistance of the joint, at least one of a benzene ring and a naphthalene ring is more preferable.
  • the crosslinking agent (B) may have multiple ring structures in the molecule, and when the ring structure is benzene, it may have a biphenyl structure, a benzophenone structure, a diphenyl ether structure, etc.
  • the crosslinking agent (B) preferably has a fluorine atom in the molecule, more preferably has 1 to 6 fluorine atoms in the molecule, and even more preferably has 3 to 6 fluorine atoms in the molecule.
  • the crosslinking agent (B) may have a fluoroalkyl group in the molecule, and specifically, may have a trifluoroalkyl group or a hexafluoroisopropyl group.
  • examples of the crosslinking agent (B) include carboxylic acid compounds such as alicyclic carboxylic acid, benzene carboxylic acid, naphthalene carboxylic acid, diphthalic acid, and fluorinated aromatic ring carboxylic acid; and carboxylic acid ester compounds such as alicyclic carboxylic acid ester, benzene carboxylic acid ester, naphthalene carboxylic acid ester, diphthalic acid ester, and fluorinated aromatic ring carboxylic acid ester.
  • carboxylic acid compounds such as alicyclic carboxylic acid, benzene carboxylic acid, naphthalene carboxylic acid, diphthalic acid ester, and fluorinated aromatic ring carboxylic acid ester.
  • the crosslinking agent (B) as a carboxylic acid ester compound, aggregation due to association between the compound (A) and the crosslinking agent (B) is suppressed, the number of aggregates and pits is reduced, and the film thickness can be easily adjusted.
  • X is preferably a methyl group, an ethyl group, a propyl group, a butyl group, etc., but is preferably an ethyl group or a propyl group from the viewpoint of further suppressing aggregation due to association between compound (A) and crosslinking agent (B).
  • carboxylic acid compound examples include, but are not limited to, alicyclic carboxylic acids such as 1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, 1,3,5-cyclohexanetricarboxylic acid, 1,2,4-cyclohexanetricarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid, and 1,2,3,4,5,6-cyclohexanehexacarboxylic acid; benzene carboxylic acids such as 1,2,4-benzenetricarboxylic acid, 1,3,5-benzenetricarboxylic acid, pyromellitic acid, benzenepentacarboxylic acid, and mellitic acid.
  • alicyclic carboxylic acids such as 1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, 1,3,5-cycl
  • naphthalene carboxylic acids such as 1,4,5,8-naphthalene tetracarboxylic acid and 2,3,6,7-naphthalene tetracarboxylic acid; 3,3',5,5'-tetracarboxydiphenylmethane, biphenyl-3,3',5,5'-tetracarboxylic acid, biphenyl-3,4',5-tricarboxylic acid, biphenyl-3,3',4,4'-tetracarboxylic acid, benzophenone-3,3',4,4'-tetracarboxylic acid, 4,4'-oxydiphthalic acid, 3,4'-oxydiphthalic acid, 1,3-bis(phthalic acid)tetramethyldisiloxane, 4,4'-(ethyne-1,2-diyl) diphthalic acid, 4,4'-(1,4-phenylenebis(oxy))diphthalic acid, 4,4'-([1,1,4
  • carboxylic acid ester compound examples include compounds in which at least one carboxy group in the specific examples of the carboxylic acid compound described above has been replaced with an ester group.
  • carboxylic acid ester compound examples include half-esterified compounds represented by the following general formulas (B-1) to (B-5).
  • R is each independently an alkyl group having 1 to 6 carbon atoms. Among them, a methyl group, an ethyl group, a propyl group, and a butyl group are preferable, and an ethyl group and a propyl group are more preferable.
  • Y is a single bond, O, C ⁇ O, or C(CF 3 ) 2 , and is preferably O.
  • a half-esterified compound can be produced, for example, by mixing a carboxylic acid anhydride, which is the anhydride of the aforementioned carboxylic acid compound, with an alcohol solvent and opening the ring of the carboxylic acid anhydride.
  • Y represents an imide-bridged or amide-bridged nitrogen atom, OH, or an ester group.
  • the joint preferably has a crosslinked structure such as amide, amide-imide, or imide, and has excellent heat resistance.
  • compound (A) has uncrosslinked cationic functional groups, if compound (A) is included as a component of the joint without crosslinking agent (B), the crosslink density is low and heat resistance is likely to be insufficient.
  • the cationic functional groups of compound (A) react with the carboxyl groups of crosslinking agent (B) to form covalent bonds, resulting in a high crosslink density and high heat resistance.
  • polar solvent (D) Specific examples of the polar solvent (D) include: Protic inorganic compounds such as water and heavy water; Alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutyl alcohol, isopentyl alcohol, cyclohexanol, ethylene glycol, propylene glycol, 2-methoxyethanol, 2-ethoxyethanol, benzyl alcohol, diethylene glycol, triethylene glycol, and glycerin; Ethers such as tetrahydrofuran and dimethoxyethane; Aldehydes and ketones such as furfural, acetone, ethyl methyl ketone, and cyclohexane; Acid derivatives such as acetic anhydride, ethyl acetate, butyl acetate, ethylene carbonate, propylene carbonate, formaldehyde, N-methylformamide, N,N-di
  • the content of the polar solvent (D) in the solution is not particularly limited, and is, for example, from 1.0 mass % to 99.99896 mass %, preferably from 40 mass % to 99.99896 mass %, based on the total mass of the solution.
  • the boiling point of the polar solvent (D) is preferably 150° C. or lower, and more preferably 120° C. or lower.
  • the solution containing the resin material may contain an additive (C).
  • the additive (C) include an acid (C-1) having a carboxy group and a weight average molecular weight of 46 to 195, and a base (C-2) having a nitrogen atom and no ring structure and a weight average molecular weight of 17 to 120.
  • the acid (C-1) is an acid having a carboxy group and a weight average molecular weight of 46 to 195. It is presumed that by including the acid (C-1) as the additive (C), the amino group in the compound (A) and the carboxy group in the acid (C-1) form an ionic bond, thereby suppressing aggregation due to association between the compound (A) and the crosslinking agent (B).
  • the acid (C-1) is not particularly limited as long as it has a carboxy group and has a weight average molecular weight of 46 to 195, and examples of the acid (C-1) include monocarboxylic acid compounds, dicarboxylic acid compounds, and oxydicarboxylic acid compounds. More specifically, examples of the acid (C-1) include formic acid, acetic acid, malonic acid, oxalic acid, citric acid, benzoic acid, lactic acid, glycolic acid, glyceric acid, butyric acid, methoxyacetic acid, ethoxyacetic acid, phthalic acid, terephthalic acid, picolinic acid, salicylic acid, and 3,4,5-trihydroxybenzoic acid.
  • the content of acid (C-1) in the solution containing the resin material is not particularly limited, and for example, the ratio (COOH/N) of the number of carboxy groups in acid (C-1) to the total number of nitrogen atoms in compound (A) is preferably 0.01 or more and 10 or less, more preferably 0.02 or more and 6 or less, and even more preferably 0.5 or more and 3 or less.
  • the base (C-2) is a base having a nitrogen atom and a weight average molecular weight of 17 to 120. It is presumed that the solution containing the resin material contains the base (C-2) as an additive (C), and thus the carboxy group in the crosslinking agent (B) and the amino group in the base (C-2) form an ionic bond, suppressing aggregation due to association between the compound (A) and the crosslinking agent (B).
  • the base (C-2) is not particularly limited as long as it has a nitrogen atom and does not have a ring structure with a weight average molecular weight of 17 to 120, and examples of the base include monoamine compounds and diamine compounds. More specifically, examples of the base (C-2) include ammonia, ethylamine, ethanolamine, diethylamine, triethylamine, ethylenediamine, N-acetylethylenediamine, N-(2-aminoethyl)ethanolamine, and N-(2-aminoethyl)glycine.
  • the content of the base (C-2) in the solution containing a resin material is not particularly limited.
  • the ratio (N/COOH) of the number of nitrogen atoms in the base (C-2) to the number of carboxy groups in the crosslinking agent (B) is preferably 0.5 or more and 5 or less, and more preferably 0.9 or more and 3 or less.
  • the solution containing the resin material may be mixed with tetraethoxysilane, tetramethoxysilane, bistriethoxysilylethane, bistriethoxysilylmethane, bis(methyldiethoxysilyl)ethane, 1,1,3,3,5,5-hexaethoxy-1,3,5-trisilacyclohexane, 1,3,5,7-tetramethyl-1,3,5,7-tetrahydroxylcyclosiloxane, 1,1,4,4-tetramethyl-1,4-diethoxydisilethylene, or 1,3,5-trimethyl-1,3,5-trimethyl-1,3,5-triethoxy-1,3,5-trisilacyclohexane.
  • methyltriethoxysilane, dimethyldiethoxysilane, trimethylethoxysilane, etc. may be mixed in. These compounds may be mixed in order to control the etch selectivity.
  • the solution containing the resin material may contain a solvent other than the polar solvent (D), such as normal hexane.
  • the solution containing the resin material may contain phthalic acid, benzoic acid, or a derivative thereof, for example, to improve electrical characteristics.
  • the solution containing the resin material may also contain benzotriazole or a derivative thereof, for example to inhibit corrosion of copper.
  • the pH of the solution containing the resin material is not particularly limited, but is preferably 2.0 or more and 12.0 or less.
  • acid (C-1) is used as additive (C)
  • a base (C-2) is used as the additive (C)
  • the semiconductor structure of the present disclosure may further include a silicon-containing layer (e.g., silicon-containing layer 32) interposed between at least the organic gap-fill material (e.g., organic gap-fill material 30) and the semiconductor substrate (e.g., bonding layer 14 in semiconductor substrate 10), thereby further improving adhesion between the organic gap-fill material and the semiconductor substrate.
  • a silicon-containing layer e.g., silicon-containing layer 32
  • the organic gap-fill material e.g., organic gap-fill material 30
  • the semiconductor substrate e.g., bonding layer 14 in semiconductor substrate 10
  • the silicon-containing layer may be interposed at least between the organic gap fill material and the semiconductor substrate, and between the organic gap fill material (see, for example, silicon-containing layer 32 in FIG. 1). This further improves the adhesion between the organic gap fill material and the semiconductor substrate, and between the organic gap fill material and the silicon die.
  • the silicon-containing layer preferably includes at least one selected from the group consisting of a SiO2 layer, a SiCN layer, a SiN layer, and a resin layer containing a siloxane bond.
  • SiO 2 layer, SiCN layer, SiN layer As each of the silicon-containing layers, SiO 2 layer, SiCN layer, and SiN layer, a known layer formed by a vapor phase growth method such as sputtering, CVD, or ALD can be used.
  • the resin layer containing siloxane bonds as the silicon-containing layer can be formed by a wet process such as a coating method (for example, a method including coating and heating) or a printing method.
  • a coating method for example, a method including coating and heating
  • a preferred embodiment of the method for forming the resin layer containing siloxane bonds is similar to the preferred embodiment of the method for forming the organic gap-fill material.
  • the resin layer containing siloxane bonds includes, for example, structures represented by the following formulas (1) to (3).
  • the group bonded to Si may be substituted with an alkylene group, a phenylene group, or the like.
  • a structure having (—O—) x (R 1 ) y Si-(R 2 )-Si(R 1 ) y (—O—) x or the like R 1 represents a methyl group or the like, R 2 represents an alkylene group, a phenylene group, or the like, x and y are each independently an integer of 0 or more, and x+y is 3).
  • Examples of materials for forming Si—O bonds include compounds represented by the following formulas (4) and (5).
  • the structures represented by formulae (1) and (2) can be produced, for example, by heating and reacting the compounds represented by formulae (4) and (5).
  • An example of a coating liquid for forming a resin layer containing siloxane bonds is a coating liquid in which a compound having an Si-O bond and an amino group is applied as compound (A) in the coating liquid for forming the organic gap fill material described above.
  • Examples of compounds having an Si--O bond and an amino group include siloxane diamines, silane coupling agents having an amino group, and siloxane polymers of silane coupling agents having an amino group.
  • silane coupling agent having an amino group is a compound represented by the following formula (A-3).
  • R 1 represents an alkyl group having 1 to 4 carbon atoms which may be substituted.
  • R 2 and R 3 each independently represent an alkylene group having 1 to 12 carbon atoms, an ether group, or a carbonyl group which may be substituted (the skeleton may contain a carbonyl group, an ether group, etc.).
  • R 4 and R 5 each independently represent an alkylene group having 1 to 4 carbon atoms which may be substituted or a single bond.
  • Ar represents a divalent or trivalent aromatic ring.
  • X 1 represents hydrogen or an alkyl group having 1 to 5 carbon atoms which may be substituted.
  • X 2 represents hydrogen, a cycloalkyl group, a heterocyclic group, an aryl group, or an alkyl group having 1 to 5 carbon atoms which may be substituted (the skeleton may contain a carbonyl group, an ether group, etc.).
  • a plurality of R 1 , R 2 , R 3 , R 4 , R 5 , and X 1 may be the same or different.
  • Substituents of the alkyl and alkylene groups in R1 , R2 , R3 , R4 , R5 , X1 and X2 each independently include an amino group, a hydroxy group, an alkoxy group, a cyano group, a carboxylic acid group, a sulfonic acid group and halogens.
  • Examples of the divalent or trivalent aromatic ring in Ar include a divalent or trivalent benzene ring.
  • Examples of the aryl group in X2 include a phenyl group, a methylbenzyl group, and a vinylbenzyl group.
  • silane coupling agents represented by formula (A-3) include, for example, N-(2-aminoethyl)-3-aminopropylmethyldiethoxysilane, N-(2-aminoethyl)-3-aminopropyltriethoxysilane, N-(2-aminoethyl)-3-aminoisobutyldimethylmethoxysilane, N-(2-aminoethyl)-3-aminoisobutylmethyldimethoxysilane, N-(2-aminoethyl)-11-aminoundecyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, (aminoethylaminoethyl)phenyltriethoxysilane, methylbenzylaminoethyla
  • silane coupling agents containing an amino group other than those represented by formula (A-3) include N,N-bis[3-(trimethoxysilyl)propyl]ethylenediamine, N,N'-bis[3-(trimethoxysilyl)propyl]ethylenediamine, bis[(3-triethoxysilyl)propyl]amine, piperazinylpropylmethyldimethoxysilane, bis[3-(triethoxysilyl)propyl]urea, bis(methyldiethoxysilylpropyl)amine, 2-methyl-2-phenylpropanedi ...
  • polymers (siloxane polymers) formed from these silane coupling agents via siloxane bonds may be used.
  • siloxane polymers formed from these silane coupling agents via siloxane bonds
  • Si-O-Si siloxane bonds
  • a polymer having a linear siloxane structure a polymer having a branched siloxane structure, a polymer having a cyclic siloxane structure, a polymer having a cage siloxane structure, etc.
  • the cage siloxane structure is represented, for example, by the following formula (A-1).
  • siloxane diamines examples include compounds represented by the following formula (A-2).
  • i is an integer from 0 to 4
  • j is an integer from 1 to 3
  • Me is a methyl group.

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Abstract

Une structure semi-conductrice selon la présente invention comprend un substrat semi-conducteur, une pluralité de puces de silicium qui sont disposées sur le substrat semi-conducteur et qui sont liées de manière hybride au substrat semi-conducteur, et un matériau de remplissage d'espace organique qui remplit les espaces entre la pluralité de puces de silicium sur le substrat semi-conducteur.
PCT/JP2024/003358 2023-02-06 2024-02-01 Structure semi-conductrice et son procédé de production Ceased WO2024166789A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287802A (ja) * 2006-04-13 2007-11-01 Sony Corp 三次元半導体パッケージ製造方法
JP2013038300A (ja) * 2011-08-10 2013-02-21 Fujitsu Ltd 電子装置及びその製造方法
US20210249380A1 (en) * 2020-02-11 2021-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional stacking structure and manufacturing method thereof
US20230018511A1 (en) * 2021-07-16 2023-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287802A (ja) * 2006-04-13 2007-11-01 Sony Corp 三次元半導体パッケージ製造方法
JP2013038300A (ja) * 2011-08-10 2013-02-21 Fujitsu Ltd 電子装置及びその製造方法
US20210249380A1 (en) * 2020-02-11 2021-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional stacking structure and manufacturing method thereof
US20230018511A1 (en) * 2021-07-16 2023-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing method thereof

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