WO2024162687A1 - Aluminum matrix composite material having functionally graded structure with controlled distribution of aluminum nitride, and method for preparing same - Google Patents
Aluminum matrix composite material having functionally graded structure with controlled distribution of aluminum nitride, and method for preparing same Download PDFInfo
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- WO2024162687A1 WO2024162687A1 PCT/KR2024/001160 KR2024001160W WO2024162687A1 WO 2024162687 A1 WO2024162687 A1 WO 2024162687A1 KR 2024001160 W KR2024001160 W KR 2024001160W WO 2024162687 A1 WO2024162687 A1 WO 2024162687A1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
- C01B21/0722—Preparation by direct nitridation of aluminium
- C01B21/0724—Preparation by direct nitridation of aluminium using a plasma
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/026—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
- C22F1/043—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with silicon as the next major constituent
Definitions
- the present invention relates to an aluminum matrix composite material having a gradient functional structure with a controlled distribution of aluminum nitride and a method for producing the same, and more specifically, to an aluminum matrix composite material having a gradient functional structure while having aluminum nitride as a reinforcing material by utilizing a spontaneous reaction by plasma arc melting, and a method for producing the same.
- Aluminum and copper alloys are mainly used as heat-dissipating materials for electronic products.
- Aluminum and copper have the advantage of high thermal conductivity and excellent thermal conductivity, but they have the problem that their thermal expansion coefficients are several times larger than those of semiconductor elements that release heat in electronic products.
- thermal expansion coefficients are several times larger than those of semiconductor elements that release heat in electronic products.
- the coefficient of thermal expansion of aluminum and copper alloys used in heat-dissipating materials be reduced to a level similar to that of semiconductor devices.
- the coefficient of thermal expansion is a unique property of the material determined by the bonding force between atoms, there is a limit to reducing the coefficient of thermal expansion by methods such as composition control and microstructure control.
- Metal matrix composites are generally manufactured by powder metallurgy, casting, and infiltration methods. However, these processes have the disadvantage that the cost of purchasing reinforcement materials is very high, and the cost of constructing and using high temperature and high pressure equipment required for the process is also very high.
- the purpose of the present invention is to provide a composite material having a gradient functional structure and a method for manufacturing the same by controlling the distribution of aluminum nitride formed by a spontaneous reaction within a matrix through composition control of an alloy melted by a plasma arc in order to solve the above-mentioned problem.
- the present invention seeks to provide a heat-dissipating material with a sloped functional structure that can dramatically reduce the risk of damage to a product due to repeated heat release.
- the present invention aims to provide a new heat-dissipating material for high-performance electronic devices through an aluminum matrix composite material having a gradient functional structure with a controlled distribution of aluminum nitride.
- the present invention provides an aluminum composite material having a sloped functional structure reinforced by aluminum nitride and a method for manufacturing the same.
- the present invention relates to an aluminum-silicon alloy matrix; and aluminum nitride; wherein the aluminum nitride is positioned on the alloy matrix, and the aluminum matrix composite material having a gradient functional structure exhibiting a gradient functional structure having a double layer.
- the upper part of the aluminum nitride composite material is characterized by including aluminum nitride, silicon superphase, and aluminum-silicon eutectic structure.
- the aluminum-silicon alloy is characterized in that it contains silicon in an amount of 10 to 40 atomic% relative to 100 atomic% of aluminum.
- the aluminum nitride is included in an amount of 5 to 15 parts by weight per 100 parts by weight of the composite material.
- the aluminum nitride exists at a position in the range of 5 to 15% of the depth from the upper surface of the composite material relative to 100% of the composite material.
- the present invention relates to a method for manufacturing an aluminum-matrix composite material having a gradient functional structure, comprising: a first plasma arc melting step of manufacturing an aluminum-silicon alloy by performing plasma arc melting in an inert gas atmosphere; a gas atmosphere forming step of forming a gas atmosphere in which an inert gas and nitrogen gas are mixed; a second plasma arc melting step of forming aluminum-silicon alloy obtained through the arc melting in the formed mixed gas atmosphere to form aluminum nitride on top of the alloy; and a manufacturing step of manufacturing a composite material by molding the obtained aluminum-aluminum nitride ingot.
- the mixing ratio of the inert gas and nitrogen gas is characterized by being 3:1 to 1.5:1.
- the arc current intensity is 100 to 200 A
- the arc melting time is 40 to 80 seconds.
- the slope functional composite material is characterized in that it is formed through a spontaneous reaction of aluminum atoms and nitrogen atoms by plasma arc melting in a mixed gas atmosphere containing nitrogen gas.
- the present invention can provide a composite material having a gradient functional structure and a method for manufacturing the same by controlling the distribution of aluminum nitride formed by a spontaneous reaction within a matrix through composition control of an alloy melted by a plasma arc.
- Figure 1 is an image showing specimens and OM analysis results of aluminum matrix composite materials of examples and comparative examples according to the present invention.
- Figure 2 is an image showing the OM analysis results of examples and comparative examples according to the present invention.
- Figure 3 is a graph showing the results of OM analysis and Vickers hardness measurement of examples and comparative examples according to the present invention.
- Figure 4 is a graph showing thermal conductivity according to temperature of examples and comparative examples according to the present invention.
- Figure 5 is a graph showing the results of measuring the thermal expansion coefficient of examples and comparative examples according to the present invention.
- Figure 6 is a graph showing the relationship between thermal conductivity and coefficient of thermal expansion obtained by measuring thermal conductivity and coefficient of thermal expansion of examples and comparative examples according to the present invention.
- Every maximum numerical limitation given throughout this specification will include every lower numerical limitation, as if that lower numerical limitation were expressly written out.
- Every minimum numerical limitation given throughout this specification will include every higher numerical limitation, as if that higher numerical limitation were expressly written out.
- Every numerical limitation given throughout this specification will include every better numerical range within that broader numerical range, as if that narrower numerical limitation were expressly written out.
- the present invention relates to an aluminum matrix composite material having a sloped functional structure.
- the present invention relates to an aluminum-silicon alloy matrix; and aluminum nitride; wherein the aluminum nitride is positioned on the alloy matrix, and the aluminum matrix composite material having a gradient functional structure exhibiting a gradient functional structure having a double layer.
- the above composite material is a composite material in which aluminum nitride is concentratedly formed on one side of an ingot, and a portion of the ingot is hardened. More specifically, the upper portion of the composite material may exhibit a very low coefficient of thermal expansion compared to the lower portion of the composite material because a second phase of aluminum nitride and an alloy is concentrated therein. Due to the low coefficient of thermal expansion as described above, the composite material can be used as a heat-dissipating material for high-performance electronic devices, which can drastically reduce concerns about damage to products caused by repeated heat release.
- the upper part of the aluminum nitride composite material may include aluminum nitride, silicon superphase, and aluminum-silicon eutectic structure.
- the upper part of the composite material ingot may have a low coefficient of thermal expansion.
- the aluminum-silicon alloy may contain silicon in an amount of 10 to 40 atomic% relative to 100 atomic% of aluminum.
- aluminum nitride can be distributed throughout the entire composite ingot, and when it is included in more than 40 atomic%, the upper composite layer can be formed thinly.
- the thermal conductivity may decrease.
- the aluminum nitride may be included in an amount of 5 to 15 parts by weight based on 100 parts by weight of the composite material.
- the aluminum nitride may be present at a depth ranging from 5 to 15% from the upper surface of the composite material relative to 100% of the composite material.
- the upper part of the composite material ingot may have a low coefficient of thermal expansion.
- aluminum nitride can be evenly distributed throughout the entire composite ingot, and when it is included in an amount of more than 40 atomic%, the upper composite layer can be formed thinly.
- the aluminum nitride may be included in an amount of 5 to 15 parts by weight per 100 parts by weight of the composite material.
- the present invention relates to a method for manufacturing an aluminum-matrix composite material having a gradient functional structure, comprising: a first plasma arc melting step of manufacturing an aluminum-silicon alloy by performing plasma arc melting in an inert gas atmosphere; a gas atmosphere forming step of forming a gas atmosphere in which an inert gas and nitrogen gas are mixed; a second plasma arc melting step of forming aluminum-silicon alloy obtained through the arc melting in the formed mixed gas atmosphere to form aluminum nitride on top of the alloy; and a manufacturing step of manufacturing a composite material by molding the obtained aluminum-aluminum nitride ingot.
- the inert gas can preferably be argon gas.
- the above secondary plasma arc melting step may be to melt aluminum in the mixed gas atmosphere to form aluminum nitride inside the liquid metal through a spontaneous reaction between aluminum atoms and nitrogen atoms.
- the ratio of the above nitrogen gas is less than the above mixing ratio, the nitriding reaction may not occur sufficiently, and if the ratio of the above inert gas is less than the above mixing ratio, the arc may not occur.
- the arc current intensity may be 100 to 200 A, and the arc melting time may be 40 to 80 seconds.
- the parent material may vaporize rapidly, and if it is shorter than 40 seconds, the parent material may not be sufficiently melted.
- the slope functional composite material may be formed through a spontaneous reaction of aluminum atoms and nitrogen atoms by plasma arc melting in a mixed gas atmosphere containing nitrogen gas.
- Example 1 Aluminum matrix composite material with sloped functional structure (Al-30Si/AlN)
- An Al-30Si alloy containing 30 at.% silicon to 100 at.% aluminum was manufactured by performing primary plasma arc melting in an inert gas atmosphere.
- the aluminum-silicon alloy was subjected to secondary plasma arc melting in a gas atmosphere containing argon gas and nitrogen gas in a 2:1 mixture, to manufacture an Al-30Si/AIN composite material in which aluminum nitride was formed on the upper part of the alloy.
- the plasma arc melting was performed at an arc current strength of 150 A and an arc melting time of 60 seconds.
- the alloy was manufactured in the same manner as in Example 1, except that the silicon content of the alloy was manufactured as shown in [Table 1] below.
- Comparative Example 1-1 Comparative Example 1-2 Comparative Example 1-3 Silicon content ratio (at.%) 6 12 50
- Aluminum ingots were manufactured in an inert gas atmosphere by plasma arc melting using only aluminum.
- the alloy was manufactured in the same manner as in Example 1, except that the silicon content of the alloy was manufactured as shown in [Table 2] below.
- Comparative Example 5-1 Comparative Example 5-2 Comparative Example 5-3 Comparative Example 5-4 Comparative Example 5-5 Silicon content ratio (at.%) 0 6 12 18 24
- the silicon content of the alloy was manufactured as in [Table 3] below, and the manufacturing process was the same as Example 1, except that secondary plasma arc melting was not performed.
- Comparative Example 6-1 Comparative Example 6-2 Comparative Example 6-3 Comparative Example 6-4 Comparative Example 6-5 Comparative Example 6-6 Silicon content ratio (at.%) 0 6 12 18 24 30
- Example 1 As shown in Fig. 1, the composite materials manufactured in Example 1 and Comparative Examples 1-1 and 1-2 confirmed that aluminum nitride, which appears black, was evenly distributed within the aluminum matrix, which appears white. At this time, in the specimen using the Al-30Si alloy manufactured in Example 1, it was confirmed that the formation of aluminum nitride was concentrated only on the upper part of the ingot.
- the Al-50Si/AlN composite material manufactured in Comparative Example 1-3 formed a composite layer in which aluminum nitride was concentrated only on the upper part of the ingot, but compared to the Al-30Si/AlN composite material manufactured in Example 1, the composite layer was found to be formed relatively thinly.
- Example 1 The Vickers hardness of the composite materials and aluminum ingots manufactured in Example 1 and Comparative Example 1 was measured from top to bottom, and the results are shown in Fig. 3.
- the Al-30Si/AlN composite material manufactured in Example 1 showed a hardness of up to 550 HV in the upper part of the ingot where aluminum nitride was concentratedly formed, but the hardness of the lower part showed a hardness value between 100 and 200 HV.
- the aluminum ingot manufactured in Comparative Example 2 and the silicon-free composite manufactured in Comparative Example 3 showed hardness of less than 100 HV for both the upper and lower parts, and there was almost no difference between the upper and lower parts.
- Example 1 The thermal conductivity of the composite materials and ingots manufactured in Example 1 and Comparative Examples 2 and 4 was measured according to temperature, and the results are shown in Fig. 4.
- the thermal conductivity at room temperature of the Al-30Si/AlN composite material manufactured in Example 1 was slightly lower than that of the Al-30Si manufactured in Comparative Example 4, and even when the temperature increased, the decrease in thermal conductivity was small, within 10 to 20 W/mK.
- thermal expansion coefficient of the upper part of Al-30Si/AlN, where aluminum nitride manufactured in Example 1 was intensively formed was measured, and a relatively very low value of thermal expansion coefficient of within 9 ppm/K was observed compared to the Al-30Si alloy manufactured in Comparative Example 4.
- the aluminum nitride composite having a sloped functional structure according to the present invention has high thermal conductivity and a low coefficient of thermal expansion, and thus can be applied to heat dissipation materials.
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Abstract
Description
본 발명은 질화알루미늄의 분포가 제어된 경사기능구조의 알루미늄 기지 복합재료 및 이의 제조방법에 관한 것으로, 보다 자세하게는 플라즈마 아크용해법에 의한 자발적 반응을 이용하여 강화재로써 질화알루미늄을 가지면서 동시에 경사기능구조를 보이는 알루미늄 기지 복합재료 및 이의 제조방법에 관한 것이다.The present invention relates to an aluminum matrix composite material having a gradient functional structure with a controlled distribution of aluminum nitride and a method for producing the same, and more specifically, to an aluminum matrix composite material having a gradient functional structure while having aluminum nitride as a reinforcing material by utilizing a spontaneous reaction by plasma arc melting, and a method for producing the same.
전자기기의 소형화 및 고출력화가 진행되면서 LED, 스마트폰 및 전기차 등과 같이 발열이 심한 전자제품의 사용 중 발생되는 열을 외부로 효과적으로 방출하는 고성능 방열소재의 개발에 대한 필요성이 대두되고 있다.As electronic devices become smaller and more powerful, the need for the development of high-performance heat-dissipating materials that can effectively dissipate heat generated during use of electronic products that generate a lot of heat, such as LEDs, smartphones, and electric vehicles, is increasing.
종래에 전자제품에 채택되는 방열소재로는 금속소재 중 알루미늄 및 구리 합금이 주로 적용되고 있다. 알루미늄과 구리는 열전도도가 높아 열전도 특성이 우수한 장점이 있으나, 전자제품에서 열을 방출하는 반도체 소자에 비해 열팽창계수가 수 배 이상 큰 문제점이 있다. 열팽창계수의 차이가 너무 큰 두 소재를 접합시켜 사용할 경우, 제품의 사용 중 반복적으로 열이 방출되면서 열응력이 발생하여 접합부 및 반도체 소재에서 크랙이 발생될 우려가 매우 커진다.Conventionally, aluminum and copper alloys are mainly used as heat-dissipating materials for electronic products. Aluminum and copper have the advantage of high thermal conductivity and excellent thermal conductivity, but they have the problem that their thermal expansion coefficients are several times larger than those of semiconductor elements that release heat in electronic products. When two materials with very large differences in thermal expansion coefficients are joined and used, there is a high risk that cracks will occur in the joints and semiconductor materials due to thermal stress generated when heat is repeatedly released during use of the product.
따라서 방열소재에 사용되는 알루미늄 및 구리 합금의 열팽창계수는 반도체 소자와 비슷한 수준으로 감소되는 것이 바람직하다. 그러나 열팽창계수는 원자간 결합력에 의해 결정되는 재료 고유의 성질이므로 조성 제어, 미세구조 제어의 방식으로는 열팽창계수를 감소시키기에는 한계가 있다. 이에 대한 대안으로 알루미늄, 구리 합금에 열팽창계수가 낮고 열전도도가 높은 강화재를 섞음으로 열팽창계수가 낮은 금속기지 복합재료를 만드는 방법이 있다.Therefore, it is desirable that the coefficient of thermal expansion of aluminum and copper alloys used in heat-dissipating materials be reduced to a level similar to that of semiconductor devices. However, since the coefficient of thermal expansion is a unique property of the material determined by the bonding force between atoms, there is a limit to reducing the coefficient of thermal expansion by methods such as composition control and microstructure control. As an alternative, there is a method of making a metal matrix composite material with a low coefficient of thermal expansion by mixing a reinforcing material with a low coefficient of thermal expansion and high thermal conductivity into aluminum and copper alloys.
금속기지 복합재료는 일반적으로 분말 야금법, 주조법 및 침투법으로 제조된다. 그러나 이러한 공정들은 강화재를 구매하는 비용이 매우 크며 공정에 필요한 고온·고압 장비의 구축 및 장비사용 비용 또한 매우 크다는 단점이 있다.Metal matrix composites are generally manufactured by powder metallurgy, casting, and infiltration methods. However, these processes have the disadvantage that the cost of purchasing reinforcement materials is very high, and the cost of constructing and using high temperature and high pressure equipment required for the process is also very high.
본 발명의 목적은 상기와 같은 문제를 해결하기 위해, 플라즈마 아크로 용해되는 합금의 조성제어를 통해 자발반응으로 형성되는 질화알루미늄의 기지 내 분포를 제어함으로써 경사기능구조를 갖는 복합재료 및 이의 제조방법을 제공하고자 한다.The purpose of the present invention is to provide a composite material having a gradient functional structure and a method for manufacturing the same by controlling the distribution of aluminum nitride formed by a spontaneous reaction within a matrix through composition control of an alloy melted by a plasma arc in order to solve the above-mentioned problem.
또한, 본 발명은 반복적인 열방출에 의한 제품의 손상이 발생할 우려를 획기적으로 감소시킬 수 있는 경사기능구조의 방열소재를 제공하고자 한다.In addition, the present invention seeks to provide a heat-dissipating material with a sloped functional structure that can dramatically reduce the risk of damage to a product due to repeated heat release.
또한, 본 발명은 질화알루미늄의 분포가 제어된 경사기능구조의 알루미늄 기지 복합재료를 통해 고성능 전자기기용 방열 신소재를 제공하고자 한다.In addition, the present invention aims to provide a new heat-dissipating material for high-performance electronic devices through an aluminum matrix composite material having a gradient functional structure with a controlled distribution of aluminum nitride.
본 발명이 해결하고자 하는 기술적 과제들은 이상에서 언급한 기술적 과제들로 제한되지 않으며, 언급되지 않은 또 다른 기술적 과제들은 본 발명의 기재로부터 당해 분야에서 통상의 지식을 가진 자에게 명확하게 이해될 수 있을 것이다.The technical problems to be solved by the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned can be clearly understood by a person having ordinary skill in the art from the description of the present invention.
상기 목적을 달성하기 위하여, 본 발명은 질화알루미늄에 의해 강화된 경사기능구조의 알루미늄 복합재료 및 이의 제조방법을 제공한다.To achieve the above object, the present invention provides an aluminum composite material having a sloped functional structure reinforced by aluminum nitride and a method for manufacturing the same.
본 발명은 알루미늄-실리콘 합금 기지; 및 질화알루미늄;을 포함하며, 상기 질화알루미늄은 상기 합금 기지 상부에 위치하며, 이중층을 가지는 경사기능구조를 나타내는 경사기능구조의 알루미늄 기지 복합재료에 관한 것이다.The present invention relates to an aluminum-silicon alloy matrix; and aluminum nitride; wherein the aluminum nitride is positioned on the alloy matrix, and the aluminum matrix composite material having a gradient functional structure exhibiting a gradient functional structure having a double layer.
본 발명에 있어서, 상기 질화알루미늄 복합재료의 상부는 질화알루미늄, 실리콘 초정상 및 알루미늄-실리콘 공정조직을 포함하는 것을 특징으로 한다.In the present invention, the upper part of the aluminum nitride composite material is characterized by including aluminum nitride, silicon superphase, and aluminum-silicon eutectic structure.
본 발명에 있어서, 상기 알루미늄-실리콘 합금은 실리콘이 알루미늄 100 원자% 대비 실리콘 10 내지 40 원자%로 포함된 것을 특징으로 한다.In the present invention, the aluminum-silicon alloy is characterized in that it contains silicon in an amount of 10 to 40 atomic% relative to 100 atomic% of aluminum.
본 발명에 있어서, 상기 질화알루미늄은 복합재료 100 중량부 대비 5 내지 15 중량부로 포함된 것을 특징으로 한다.In the present invention, it is characterized in that the aluminum nitride is included in an amount of 5 to 15 parts by weight per 100 parts by weight of the composite material.
본 발명에 있어서, 상기 질화알루미늄은 상기 복합재료 100 % 대비 상기 복합재료 상부 표면으로부터 깊이 5 내지 15 %의 범위의 위치까지 존재하는 것을 특징으로 한다.In the present invention, it is characterized in that the aluminum nitride exists at a position in the range of 5 to 15% of the depth from the upper surface of the composite material relative to 100% of the composite material.
본 발명은 불활성 가스 분위기에서 플라즈마 아크 용해를 수행하여 알루미늄-실리콘 합금을 제조하는 1차 플라즈마 아크 용해 단계; 불활성 가스 및 질소 가스가 혼합된 가스 분위기를 조성하는 가스 분위기 조성 단계; 상기 아크 용해를 통해 수득한 알루미늄-실리콘 합금을 상기 조성된 혼합 가스 분위기에서 플라즈마 아크 용해를 수행하여 상기 합금의 상부에 질화알루미늄을 형성하는 2차 플라즈마 아크 용해 단계; 및 상기 수득된 알루미늄-질화알루미늄 잉곳을 성형하여 복합재료를 제조하는 제조 단계;를 포함하는 경사기능구조의 알루미늄 기지 복합재료 제조방법에 관한 것이다.The present invention relates to a method for manufacturing an aluminum-matrix composite material having a gradient functional structure, comprising: a first plasma arc melting step of manufacturing an aluminum-silicon alloy by performing plasma arc melting in an inert gas atmosphere; a gas atmosphere forming step of forming a gas atmosphere in which an inert gas and nitrogen gas are mixed; a second plasma arc melting step of forming aluminum-silicon alloy obtained through the arc melting in the formed mixed gas atmosphere to form aluminum nitride on top of the alloy; and a manufacturing step of manufacturing a composite material by molding the obtained aluminum-aluminum nitride ingot.
본 발명에 있어서, 상기 불활성 가스 및 질소 가스의 혼합 비율은 3 : 1 내지 1.5 : 1 인 것을 특징으로 한다.In the present invention, the mixing ratio of the inert gas and nitrogen gas is characterized by being 3:1 to 1.5:1.
본 발명에 있어서, 상기 아크전류 세기는 100 내지 200 A 이며, 아크용해 시간은 40 내지 80초 인 것을 특징으로 한다.In the present invention, the arc current intensity is 100 to 200 A, and the arc melting time is 40 to 80 seconds.
본 발명에 있어서, 상기 경사기능 복합재료는 상기 질소가스가 혼합된 혼합 가스 분위기에서 플라즈마 아크 용해법에 의해 알루미늄 원자 및 질소 원자의 자발적인 반응을 통해 형성된 것을 특징으로 한다.In the present invention, the slope functional composite material is characterized in that it is formed through a spontaneous reaction of aluminum atoms and nitrogen atoms by plasma arc melting in a mixed gas atmosphere containing nitrogen gas.
상기 과제의 해결 수단에 의해, 본 발명은 플라즈마 아크로 용해되는 합금의 조성제어를 통해 자발반응으로 형성되는 질화알루미늄의 기지 내 분포를 제어함으로써 경사기능구조를 갖는 복합재료 및 이의 제조방법을 제공할 수 있다.By means of a means for solving the above problem, the present invention can provide a composite material having a gradient functional structure and a method for manufacturing the same by controlling the distribution of aluminum nitride formed by a spontaneous reaction within a matrix through composition control of an alloy melted by a plasma arc.
잉곳 상부의 열팽창계수를 낮춰 반도체 소자에 접합되어 낮은 열팽창계수가 요구되는 고열전도도 및 저열팽창계수 방열소재를 제공할 수 있다.By lowering the coefficient of thermal expansion at the top of the ingot, it is possible to provide a high thermal conductivity and low coefficient of thermal expansion heat dissipation material that is bonded to a semiconductor device and requires a low coefficient of thermal expansion.
본 발명의 효과들은 이상에서 언급한 효과들로 제한되지 않으며, 언급되지 않은 또 다른 효과들은 청구범위의 기재로부터 당업자에게 명확하게 이해될 수 있을 것이다.The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.
도 1은 본 발명에 따른 실시예 및 비교예의 알루미늄 기지 복합재료의 시편 및 OM 분석 결과를 나타내는 이미지이다.Figure 1 is an image showing specimens and OM analysis results of aluminum matrix composite materials of examples and comparative examples according to the present invention.
도 2는 본 발명에 따른 실시예 및 비교예의 OM 분석 결과를 나타내는 이미지이다.Figure 2 is an image showing the OM analysis results of examples and comparative examples according to the present invention.
도 3은 본 발명에 따른 실시예 및 비교예의 OM 분석 및 비커스 경도 측정 결과를 나타내는 그래프이다. Figure 3 is a graph showing the results of OM analysis and Vickers hardness measurement of examples and comparative examples according to the present invention.
도 4는 본 발명에 따른 실시예 및 비교예의 온도에 따른 열전도도를 나타내는 그래프이다.Figure 4 is a graph showing thermal conductivity according to temperature of examples and comparative examples according to the present invention.
도 5는 본 발명에 따른 실시예 및 비교예의 열팽창계수를 측정한 결과를 나타내는 그래프이다.Figure 5 is a graph showing the results of measuring the thermal expansion coefficient of examples and comparative examples according to the present invention.
도 6은 본 발명에 따른 실시예 및 비교예의 열전도도 및 열팽창계수를 측정하여 나타난 열전도도-열팽창계수의 관계를 나타내는 그래프이다.Figure 6 is a graph showing the relationship between thermal conductivity and coefficient of thermal expansion obtained by measuring thermal conductivity and coefficient of thermal expansion of examples and comparative examples according to the present invention.
본 명세서에서 사용되는 용어는 본 발명에서의 기능을 고려하면서 가능한 현재 널리 사용되는 일반적인 용어들을 선택하였으나, 이는 당 분야에 종사하는 기술자의 의도 또는 판례, 새로운 기술의 출현 등에 따라 달라질 수 있다. 또한, 특정한 경우는 출원인이 임의로 선정한 용어도 있으며, 이 경우 해당하는 발명의 설명 부분에서 상세히 그 의미를 기재할 것이다. 따라서 본 발명에서 사용되는 용어는 단순한 용어의 명칭이 아닌, 그 용어가 가지는 의미와 본 발명의 전반에 걸친 내용을 토대로 정의되어야 한다.The terms used in this specification are selected from the most widely used general terms possible while considering the functions of the present invention, but they may vary depending on the intention of engineers working in the field, precedents, the emergence of new technologies, etc. In addition, in certain cases, there are terms arbitrarily selected by the applicant, and in this case, the meanings thereof will be described in detail in the description of the corresponding invention. Therefore, the terms used in the present invention should be defined based on the meanings of the terms and the overall contents of the present invention, rather than simply the names of the terms.
다르게 정의되지 않는 한, 기술적이거나 과학적인 용어를 포함해서 여기서 사용되는 모든 용어들은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 가지고 있다. 일반적으로 사용되는 사전에 정의되어 있는 것과 같은 용어들은 관련 기술의 문맥상 가지는 의미와 일치하는 의미를 가지는 것으로 해석되어야 하며, 본 출원에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다.Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms defined in commonly used dictionaries, such as those defined in common usage, should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and shall not be interpreted in an idealized or overly formal sense unless expressly defined in this application.
수치 범위는 상기 범위에 정의된 수치를 포함한다. 본 명세서에 걸쳐 주어진 모든 최대의 수치 제한은 낮은 수치 제한이 명확히 쓰여 있는 것처럼 모든 더 낮은 수치 제한을 포함한다. 본 명세서에 걸쳐 주어진 모든 최소의 수치 제한은 더 높은 수치 제한이 명확히 쓰여 있는 것처럼 모든 더 높은 수치 제한을 포함한다. 본 명세서에 걸쳐 주어진 모든 수치 제한은 더 좁은 수치 제한이 명확히 쓰여 있는 것처럼, 더 넓은 수치 범위 내의 더 좋은 모든 수치 범위를 포함할 것이다. The numerical ranges are inclusive of the numbers defined in the above ranges. Every maximum numerical limitation given throughout this specification will include every lower numerical limitation, as if that lower numerical limitation were expressly written out. Every minimum numerical limitation given throughout this specification will include every higher numerical limitation, as if that higher numerical limitation were expressly written out. Every numerical limitation given throughout this specification will include every better numerical range within that broader numerical range, as if that narrower numerical limitation were expressly written out.
경사기능구조의 알루미늄 기지 복합재료Aluminum matrix composite material with sloped functional structure
본 발명은 경사기능구조의 알루미늄 기지 복합재료에 관한 것이다.The present invention relates to an aluminum matrix composite material having a sloped functional structure.
본 발명은 알루미늄-실리콘 합금 기지; 및 질화알루미늄;을 포함하며, 상기 질화알루미늄은 상기 합금 기지 상부에 위치하며, 이중층을 가지는 경사기능구조를 나타내는 경사기능구조의 알루미늄 기지 복합재료에 관한 것이다.The present invention relates to an aluminum-silicon alloy matrix; and aluminum nitride; wherein the aluminum nitride is positioned on the alloy matrix, and the aluminum matrix composite material having a gradient functional structure exhibiting a gradient functional structure having a double layer.
상기 복합재료는 잉곳의 한 면에 질화알루미늄을 집중적으로 형성시켜 잉곳의 일부가 경화된 복합재료인 것으로, 보다 자세하게는 상기 복합재료의 상부는 질화알루미늄과 합금의 제 2상이 집중적으로 존재하여 상기 복합재료의 하부와 비교했을 때 열팽창계수가 매우 낮게 나타나는 것일 수 있다. 상기와 같은 낮은 열팽창계수로 인해 반복적인 열방출에 의한 제품의 손상이 발생할 우려를 획기적으로 감소시킬 수 있는 고성능 전자기기용 방열소재로 사용이 가능할 수 있다.The above composite material is a composite material in which aluminum nitride is concentratedly formed on one side of an ingot, and a portion of the ingot is hardened. More specifically, the upper portion of the composite material may exhibit a very low coefficient of thermal expansion compared to the lower portion of the composite material because a second phase of aluminum nitride and an alloy is concentrated therein. Due to the low coefficient of thermal expansion as described above, the composite material can be used as a heat-dissipating material for high-performance electronic devices, which can drastically reduce concerns about damage to products caused by repeated heat release.
본 발명에 있어서, 상기 질화알루미늄 복합재료의 상부는 질화알루미늄, 실리콘 초정상 및 알루미늄-실리콘 공정조직을 포함하는 것일 수 있다.In the present invention, the upper part of the aluminum nitride composite material may include aluminum nitride, silicon superphase, and aluminum-silicon eutectic structure.
상기 질화알루미늄 및 상기 실리콘은 모두 상온에서 열팽창계수가 매우 낮은 소재이므로 상기 복합재료 잉곳의 상부는 열팽창계수가 낮게 나타나도록 하는 것일 수 있다.Since the above aluminum nitride and the above silicon are both materials having a very low coefficient of thermal expansion at room temperature, the upper part of the composite material ingot may have a low coefficient of thermal expansion.
본 발명에 있어서, 상기 알루미늄-실리콘 합금은 실리콘이 알루미늄 100 원자% 대비 실리콘 10 내지 40 원자%로 포함된 것일 수 있다.In the present invention, the aluminum-silicon alloy may contain silicon in an amount of 10 to 40 atomic% relative to 100 atomic% of aluminum.
상기 실리콘이 10 원자% 미만으로 포함될 경우 질화알루미늄이 상기 복합재료 잉곳 전반부에 분포하게 될 수 있으며, 40 원자% 를 초과하여 포함될 경우 상부의 복합재층이 얇게 형성될 수 있다.When the above silicon is included in less than 10 atomic%, aluminum nitride can be distributed throughout the entire composite ingot, and when it is included in more than 40 atomic%, the upper composite layer can be formed thinly.
상기 실리콘의 함량이 증가할수록 열전도도가 감소하는 것일 수 있다. As the content of the above silicon increases, the thermal conductivity may decrease.
본 발명에 있어서, 상기 질화알루미늄은 상기 복합재료 100 중량부 대비 5 내지 15 중량부로 포함된 것일 수 있다.In the present invention, the aluminum nitride may be included in an amount of 5 to 15 parts by weight based on 100 parts by weight of the composite material.
본 발명에 있어서, 상기 질화알루미늄은 상기 복합재료 100 % 대비 상기 복합재료 상부 표면으로부터 깊이 5 내지 15 %의 범위의 위치까지 존재하는 것일 수 있다.In the present invention, the aluminum nitride may be present at a depth ranging from 5 to 15% from the upper surface of the composite material relative to 100% of the composite material.
상기 질화알루미늄의 형성은 금속-세라믹의 상간계면을 형성하나 열전도도가 큰 세라믹 재료로 상기 합금의 열전도 특성을 크게 저하시키지 않는 것일 수 있다. The formation of the above aluminum nitride forms a metal-ceramic phase interface, but may not significantly reduce the thermal conductivity of the alloy as it is a ceramic material with high thermal conductivity.
경사기능구조의 알루미늄 기지 복합재료 제조방법Method for manufacturing aluminum matrix composite material with sloped functional structure
본 발명은 경사기능구조의 알루미늄 기지 복합재료 제조방법에 관한 것이다. The present invention relates to a method for manufacturing an aluminum matrix composite material having a sloped functional structure.
본 발명에 있어서 상기 경사기능구조의 알루미늄 기지 복합재료는 알루미늄-실리콘 합금 기지; 및 질화알루미늄;을 포함하며, 상기 질화알루미늄은 상기 합금 기지 상부에 위치하며, 이중층을 가지는 경사기능구조를 나타내는 것일 수 있다.In the present invention, the aluminum matrix composite material having the above-described sloped functional structure includes an aluminum-silicon alloy matrix; and aluminum nitride; wherein the aluminum nitride is positioned on the alloy matrix and may exhibit a sloped functional structure having a double layer.
상기 복합재료는 잉곳의 한 면에 질화알루미늄을 집중적으로 형성시켜 잉곳의 일부가 경화된 복합재료인 것으로, 보다 자세하게는 상기 복합재료의 상부는 질화알루미늄과 합금의 제 2상이 집중적으로 존재하여 상기 복합재료의 하부와 비교했을 때 열팽창계수가 매우 낮게 나타나는 것일 수 있다. 상기와 같은 낮은 열팽창계수로 인해 반복적인 열방출에 의한 제품의 손상이 발생할 우려를 획기적으로 감소시킬 수 있는 고성능 전자기기용 방열소재로 사용이 가능할 수 있다.The above composite material is a composite material in which aluminum nitride is concentratedly formed on one side of an ingot, and a portion of the ingot is hardened. More specifically, the upper portion of the composite material may exhibit a very low coefficient of thermal expansion compared to the lower portion of the composite material because a second phase of aluminum nitride and an alloy is concentrated therein. Due to the low coefficient of thermal expansion as described above, the composite material can be used as a heat-dissipating material for high-performance electronic devices, which can drastically reduce concerns about damage to products caused by repeated heat release.
본 발명에 있어서, 상기 질화알루미늄 복합재료의 상부는 질화알루미늄, 실리콘 초정상 및 알루미늄-실리콘 공정조직을 포함하는 것일 수 있다.In the present invention, the upper part of the aluminum nitride composite material may include aluminum nitride, silicon superphase, and aluminum-silicon eutectic structure.
상기 질화알루미늄 및 상기 실리콘은 모두 상온에서 열팽창계수가 매우 낮은 소재이므로 상기 복합재료 잉곳의 상부는 열팽창계수가 낮게 나타나도록 하는 것일 수 있다.Since the above aluminum nitride and the above silicon are both materials having a very low coefficient of thermal expansion at room temperature, the upper part of the composite material ingot may have a low coefficient of thermal expansion.
본 발명에 있어서, 상기 알루미늄-실리콘 합금은 알루미늄 100 원자% 대비 실리콘 10 내지 40 원자% 가 포함된 것일 수 있다.In the present invention, the aluminum-silicon alloy may contain 10 to 40 atomic% of silicon relative to 100 atomic% of aluminum.
상기 실리콘이 10 원자% 미만으로 포함될 경우 질화알루미늄이 상기 복합재료 잉곳 전반부에 고르게 분포하게 될 수 있으며, 40 원자% 를 초과하여 포함될 경우 상부의 복합재층이 얇게 형성될 수 있다.When the above silicon is included in an amount of less than 10 atomic%, aluminum nitride can be evenly distributed throughout the entire composite ingot, and when it is included in an amount of more than 40 atomic%, the upper composite layer can be formed thinly.
상기 실리콘의 함량이 증가할수록 열전도도가 감소하는 것일 수 있다.As the content of the above silicon increases, the thermal conductivity may decrease.
본 발명에 있어서, 상기 질화알루미늄은 복합재료 100 중량부 대비 5 내지 15 중량부로 포함되는 것일 수 있다.In the present invention, the aluminum nitride may be included in an amount of 5 to 15 parts by weight per 100 parts by weight of the composite material.
본 발명에 있어서, 상기 질화알루미늄은 상기 복합재료 100 % 대비 상기 복합재료 상부 표면으로부터 깊이 5 내지 15 %의 범위의 위치까지 존재하는 것일 수 있다.In the present invention, the aluminum nitride may be present at a depth ranging from 5 to 15% from the upper surface of the composite material relative to 100% of the composite material.
상기 질화알루미늄의 형성은 금속-세라믹의 상간계면을 형성하나 열전도도가 큰 세라믹 재료로 상기 합금의 열전도 특성을 크게 저하시키지 않는 것일 수 있다.The formation of the above aluminum nitride forms a metal-ceramic phase interface, but may not significantly reduce the thermal conductivity of the alloy as it is a ceramic material with high thermal conductivity.
본 발명은 불활성 가스 분위기에서 플라즈마 아크 용해를 수행하여 알루미늄-실리콘 합금을 제조하는 1차 플라즈마 아크 용해 단계; 불활성 가스 및 질소 가스가 혼합된 가스 분위기를 조성하는 가스 분위기 조성 단계; 상기 아크 용해를 통해 수득한 알루미늄-실리콘 합금을 상기 조성된 혼합 가스 분위기에서 플라즈마 아크 용해를 수행하여 상기 합금의 상부에 질화알루미늄을 형성하는 2차 플라즈마 아크 용해 단계; 및 상기 수득된 알루미늄-질화알루미늄 잉곳을 성형하여 복합재료를 제조하는 제조 단계;를 포함하는 경사기능구조의 알루미늄 기지 복합재료 제조방법에 관한 것이다.The present invention relates to a method for manufacturing an aluminum-matrix composite material having a gradient functional structure, comprising: a first plasma arc melting step of manufacturing an aluminum-silicon alloy by performing plasma arc melting in an inert gas atmosphere; a gas atmosphere forming step of forming a gas atmosphere in which an inert gas and nitrogen gas are mixed; a second plasma arc melting step of forming aluminum-silicon alloy obtained through the arc melting in the formed mixed gas atmosphere to form aluminum nitride on top of the alloy; and a manufacturing step of manufacturing a composite material by molding the obtained aluminum-aluminum nitride ingot.
상기 1차 및 2차 플라즈마 아크 용해를 통해 형성된 플라즈마를 이용하여 고융점 원소를 짧은 시간 내에 용해하여 두 가지 이상의 금속 원소가 균일하게 혼합된 것일 수 있다. 상기 불활성 가스는 바람직하게는 아르곤 가스 일 수 있다.By using the plasma formed through the first and second plasma arc melting, a high melting point element can be melted in a short period of time, so that two or more metal elements can be uniformly mixed. The inert gas can preferably be argon gas.
상기 2차 플라즈마 아크 용해 단계는 상기 혼합 가스 분위기에서 알루미늄을 용해하여 알루미늄 원자와 질소 원자의 자발적인 반응을 통해 액상 금속 내부에 질화알루미늄을 형성시키는 것일 수 있다.The above secondary plasma arc melting step may be to melt aluminum in the mixed gas atmosphere to form aluminum nitride inside the liquid metal through a spontaneous reaction between aluminum atoms and nitrogen atoms.
본 발명에 있어서, 상기 불활성 가스 및 질소 가스의 혼합 비율은 3 : 1 내지 1.5 : 1 인 것일 수 있으며, 바람직하게는 2 : 1 일 수 있다.In the present invention, the mixing ratio of the inert gas and nitrogen gas may be 3:1 to 1.5:1, and preferably 2:1.
상기 질소가스의 비율이 상기 혼합비율 미만일 경우 질화반응이 충분히 일어나지 않을 수 있으며, 상기 불활성 가스 비율이 상기 혼합비율 미만일 경우 아크가 발생하지 않을 수 있다. If the ratio of the above nitrogen gas is less than the above mixing ratio, the nitriding reaction may not occur sufficiently, and if the ratio of the above inert gas is less than the above mixing ratio, the arc may not occur.
본 발명에 있어서, 상기 아크전류 세기는 100 내지 200 A 이며, 아크용해 시간은 40 내지 80초 인 것일 수 있다. In the present invention, the arc current intensity may be 100 to 200 A, and the arc melting time may be 40 to 80 seconds.
상기 용해 시간이 80초 이상일 경우 모재가 급격하기 기화될 수 있으며, 40초 미만일 경우 상기 모재가 충분히 용해되지 않을 수 있다.If the above melting time is longer than 80 seconds, the parent material may vaporize rapidly, and if it is shorter than 40 seconds, the parent material may not be sufficiently melted.
본 발명에 있어서, 상기 경사기능 복합재료는 상기 질소가스가 혼합된 혼합 가스 분위기에서 플라즈마 아크 용해법에 의해 알루미늄 원자 및 질소 원자의 자발적인 반응을 통해 형성된 것일 수 있다.In the present invention, the slope functional composite material may be formed through a spontaneous reaction of aluminum atoms and nitrogen atoms by plasma arc melting in a mixed gas atmosphere containing nitrogen gas.
실시예Example
이하, 본 발명의 실시예를 상세히 기술하나, 하기 실시예에 의해 본 발명이 한정되지 아니함은 자명하다.Hereinafter, examples of the present invention will be described in detail, but it is obvious that the present invention is not limited to the following examples.
본 발명의 이점 및 특징 그리고 그것들을 달성하는 방법은 상세하게 후술되어 있는 실시예들을 참조하면 명확해 질 것이다. 그러나 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 실시예들은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다.The advantages and features of the present invention and the method for achieving them will become clear with reference to the embodiments described in detail below. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and the embodiments are provided only to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.
실시예 1. 경사기능구조의 알루미늄 기지 복합재료(Al-30Si/AlN)Example 1. Aluminum matrix composite material with sloped functional structure (Al-30Si/AlN)
불활성 가스 분위기에서 1차 플라즈마 아크 용해를 수행하여 알루미늄 100 원자% 대비 실리콘이 30 원자%(at.%)로 포함된 Al-30Si 합금을 제조하였다. 상기 알루미늄 실리콘 합금을 아르곤 가스 및 질소 가스가 2 : 1로 혼합된 가스 분위기를 조성하는 가스 분위기에서 2차 플라즈마 아크 용해를 수행하여 상기 합금의 상부에 질화알루미늄이 형성된 Al-30Si/AIN 복합재료를 제조하였다. 상기 플라즈마 아크 용해는 아크 전류 세기 150 A 및 아크 용해 시간을 60초로 진행하였다.An Al-30Si alloy containing 30 at.% silicon to 100 at.% aluminum was manufactured by performing primary plasma arc melting in an inert gas atmosphere. The aluminum-silicon alloy was subjected to secondary plasma arc melting in a gas atmosphere containing argon gas and nitrogen gas in a 2:1 mixture, to manufacture an Al-30Si/AIN composite material in which aluminum nitride was formed on the upper part of the alloy. The plasma arc melting was performed at an arc current strength of 150 A and an arc melting time of 60 seconds.
비교예 1. 실리콘 함량이 다른 복합재료(Al-Si/AlN)Comparative Example 1. Composite materials with different silicon contents (Al-Si/AlN)
합금의 실리콘 함량을 하기 [표 1]과 같이 제조한 것을 제외하고는 실시예 1과 동일하게 제조하였다.The alloy was manufactured in the same manner as in Example 1, except that the silicon content of the alloy was manufactured as shown in [Table 1] below.
비교예 2. 알루미늄 잉곳(Al)Comparative Example 2. Aluminum Ingot (Al)
알루미늄만을 사용하여 플라즈마 아크 용해법으로 불활성 가스 분위기에서 알루미늄 잉곳을 제조하였다.Aluminum ingots were manufactured in an inert gas atmosphere by plasma arc melting using only aluminum.
비교예 3. 실리콘이 포함되지 않은 알루미늄-질화알루미늄 복합재료(Al-AlN)Comparative Example 3. Aluminum-Aluminum Nitride Composite (Al-AlN) without Silicon
알루미늄-실리콘 합금이 아닌 알루미늄 금속을 기재로 사용한 것을 제외하고는 실시예 1과 동일하게 제조하였다.It was manufactured in the same manner as in Example 1, except that aluminum metal, not an aluminum-silicon alloy, was used as the substrate.
비교예 4. 질화알루미늄이 형성되지 않은 알루미늄-실리콘 합금(Al-30Si)Comparative Example 4. Aluminum-silicon alloy (Al-30Si) without aluminum nitride formation
2차 플라즈마 아크 용해를 진행하지 않은 것을 제외하고는 실시예 1과 동일하게 제조하였다. It was manufactured in the same manner as in Example 1, except that secondary plasma arc melting was not performed.
비교예 5. 실리콘 함량이 다른 복합재료(Al-Si/AlN)Comparative Example 5. Composite materials with different silicon contents (Al-Si/AlN)
합금의 실리콘 함량을 하기 [표 2]와 같이 제조한 것을 제외하고는 실시예 1과 동일하게 제조하였다.The alloy was manufactured in the same manner as in Example 1, except that the silicon content of the alloy was manufactured as shown in [Table 2] below.
비교예 6. 실리콘 함량이 다른 합금(Al-Si)Comparative Example 6. Alloys with different silicon contents (Al-Si)
합금의 실리콘 함량을 하기 [표 3]과 같이 제조한 후 2차 플라즈마 아크 용해를 진행하지 않은 것을 제외하고는 실시예 1과 동일하게 제조하였다.The silicon content of the alloy was manufactured as in [Table 3] below, and the manufacturing process was the same as Example 1, except that secondary plasma arc melting was not performed.
실험예 1. 광학현미경(OM) 분석Experimental Example 1. Optical Microscope (OM) Analysis
실시예 1 및 비교예 1-1 및 1-2에서 제조된 복합재료의 OM 분석을 진행하고 이에 대한 결과를 도 1로 나타내었다.OM analysis of the composite materials manufactured in Example 1 and Comparative Examples 1-1 and 1-2 was performed, and the results are shown in Figure 1.
도 1에 나타난 바와 같이, 실시예 1 및 비교예 1-1 및 1-2에서 제조된 복합재료는 검은색으로 나타나는 질화알루미늄이 흰색으로 나타내는 알루미늄 기지 내부에 고르게 분포되어 있는 것을 확인하였다. 이 때 실시예 1에서 제조된 Al-30Si 합금을 이용한 시편은 질화알루미늄의 형성이 잉곳 상부에만 집중되어 있는 것을 확인하였다.As shown in Fig. 1, the composite materials manufactured in Example 1 and Comparative Examples 1-1 and 1-2 confirmed that aluminum nitride, which appears black, was evenly distributed within the aluminum matrix, which appears white. At this time, in the specimen using the Al-30Si alloy manufactured in Example 1, it was confirmed that the formation of aluminum nitride was concentrated only on the upper part of the ingot.
또한, 실시예 1 및 비교예 1-3에서 제조된 복합재료의 OM 분석을 진행하고 이에 대한 결과를 도 2로 나타내었다.In addition, OM analysis of the composite materials manufactured in Example 1 and Comparative Examples 1-3 was conducted, and the results thereof are shown in Fig. 2.
도 2에 나타난 바와 같이, 비교예 1-3에서 제조된 Al-50Si/AlN 복합재료는 질화알루미늄이 잉곳 상부에만 집중된 복합재층이 형성되었으나, 실시예 1에서 제조된 Al-30Si/AlN 복합재료와 비교하였을 때 상기 복합재층이 비교적 얇게 형성된 것으로 나타났다.As shown in Fig. 2, the Al-50Si/AlN composite material manufactured in Comparative Example 1-3 formed a composite layer in which aluminum nitride was concentrated only on the upper part of the ingot, but compared to the Al-30Si/AlN composite material manufactured in Example 1, the composite layer was found to be formed relatively thinly.
상기와 같은 결과를 통해, 실리콘의 조성 제어를 통해 질화알루미늄의 분포를 조절하는 것이 가능함을 확인하였다. Through the above results, it was confirmed that it is possible to control the distribution of aluminum nitride by controlling the composition of silicon.
실험예 2. 비커스 경도 측정Experimental Example 2. Vickers hardness measurement
실시예 1 및 비교예 1에서 제조된 복합재료 및 알루미늄 잉곳의 상부에서 하부 방향으로 비커스 경도를 측정하고 이에 대한 결과를 도 3 으로 나타내었다.The Vickers hardness of the composite materials and aluminum ingots manufactured in Example 1 and Comparative Example 1 was measured from top to bottom, and the results are shown in Fig. 3.
도 3에 나타난 바와 같이, 실시예 1에서 제조된 Al-30Si/AlN 복합재료는 질화알루미늄이 집중적으로 형성된 잉곳 상부는 경도가 최대 550 HV까지 증가되었으나 하부의 경도는 100 내지 200 HV 사이의 경도값을 나타냈다. As shown in Fig. 3, the Al-30Si/AlN composite material manufactured in Example 1 showed a hardness of up to 550 HV in the upper part of the ingot where aluminum nitride was concentratedly formed, but the hardness of the lower part showed a hardness value between 100 and 200 HV.
반면 비교예 2에서 제조된 알루미늄 잉곳 및 비교예 3에서 제조된 실리콘이 포함되지 않는 복합재료는 상·하부 모두 경도가 100 HV 미만으로 나타났으며 상하부의 차이가 거의 나타나지 않았다.On the other hand, the aluminum ingot manufactured in Comparative Example 2 and the silicon-free composite manufactured in Comparative Example 3 showed hardness of less than 100 HV for both the upper and lower parts, and there was almost no difference between the upper and lower parts.
상기와 같은 결과를 통해, 실리콘의 포함 여부 및 질화알루미늄의 분포를 조절함으로써 잉곳의 상부와 하부의 물성을 두 배 이상으로 다르게 제어하는 것이 가능함을 확인하였다. Through the above results, it was confirmed that it is possible to control the properties of the upper and lower parts of the ingot to be more than twice different by controlling the inclusion of silicon and the distribution of aluminum nitride.
실험예 3. 열전도도 측정시험Experimental Example 3. Thermal Conductivity Measurement Test
실시예 1 및 비교예 2 및 4에서 제조된 복합재료 및 잉곳의 열전도도를 온도에 따라 측정하고 이에 대한 결과를 도 4로 나타내었다.The thermal conductivity of the composite materials and ingots manufactured in Example 1 and Comparative Examples 2 and 4 was measured according to temperature, and the results are shown in Fig. 4.
도 4에 나타난 바와 같이, 비교예 2에서 제조된 Al 잉곳과 비교하여 실시예 1 및 비교예 4에서 제조된 복합재료 및 합금의 열전도도가 매우 감소한 것으로 나타났다.As shown in Fig. 4, the thermal conductivity of the composite materials and alloys manufactured in Example 1 and Comparative Example 4 was found to be significantly reduced compared to the Al ingot manufactured in Comparative Example 2.
그러나 실시예 1에서 제조된 Al-30Si/AlN 복합재료의 상온에서의 열전도도는 비교예 4에서 제조된 Al-30Si보다 약간 낮으며 온도가 증가하더라도 열전도도의 감소폭은 10 내지 20 W/mK 이내로 감소폭이 작게 나타났다.However, the thermal conductivity at room temperature of the Al-30Si/AlN composite material manufactured in Example 1 was slightly lower than that of the Al-30Si manufactured in Comparative Example 4, and even when the temperature increased, the decrease in thermal conductivity was small, within 10 to 20 W/mK.
상기와 같은 결과를 통해, 질화알루미늄의 형성은 금속-세라믹 상간계면을 형성함에도 Al-Si 합금의 열전도 특성을 크게 저하시키지 않음을 확인하였다. Through the above results, it was confirmed that the formation of aluminum nitride does not significantly reduce the thermal conductivity properties of the Al-Si alloy despite forming a metal-ceramic interface.
실험예 4. 열팽창계수 측정시험Experimental Example 4. Thermal Expansion Coefficient Measurement Test
실시예 1 및 비교예 4 내지 6에서 제조된 복합재료 및 합금의 열팽창계수 측정 시험을 수행하고 이에 대한 결과를 도 5로 나타내었다.A thermal expansion coefficient measurement test was performed on the composite materials and alloys manufactured in Example 1 and Comparative Examples 4 to 6, and the results are shown in Fig. 5.
도 5에 나타난 바와 같이, 실시예 1 및 비교예 4 내지 6에서 제조된 복합재료 및 합금 모두 실리콘의 함량이 증가할수록 열팽창계수가 감소하는 경향을 보였다.As shown in Fig. 5, both the composite materials and alloys manufactured in Example 1 and Comparative Examples 4 to 6 showed a tendency for the thermal expansion coefficient to decrease as the silicon content increased.
특히, 실시예 1에서 제조된 질화알루미늄이 집중적으로 형성되어 있는 Al-30Si/AlN 상부의 열팽창 계수를 측정한 결과, 비교예 4에서 제조된 Al-30Si 합금과 비교했을 때 9 ppm/K 내로 비교적 매우 낮은 값의 열팽창계수가 나타났다. In particular, the thermal expansion coefficient of the upper part of Al-30Si/AlN, where aluminum nitride manufactured in Example 1 was intensively formed, was measured, and a relatively very low value of thermal expansion coefficient of within 9 ppm/K was observed compared to the Al-30Si alloy manufactured in Comparative Example 4.
상기와 같은 결과를 통해, 실리콘의 함량 및 질화알루미늄의 분포를 조절함으로써 열팽창계수를 제어하는 것이 가능함을 확인하였다. Through the above results, it was confirmed that it is possible to control the thermal expansion coefficient by adjusting the content of silicon and the distribution of aluminum nitride.
실험예 5. 열전도도 및 열팽창계수 측정시험Experimental Example 5. Thermal Conductivity and Thermal Expansion Coefficient Measurement Test
실시예 1 및 비교예 4에서 제조된 복합재료 및 합금의 열전도도 및 열팽창계수 측정 시험을 수행하고 상기 실험을 통해 나타난 열팽창계수 및 열전도도의 관계를 도 6에 나타내었다.Thermal conductivity and thermal expansion coefficient measurements of the composite materials and alloys manufactured in Example 1 and Comparative Example 4 were performed, and the relationship between the thermal expansion coefficient and thermal conductivity obtained through the experiment is shown in Fig. 6.
도 6에 나타난 바와 같이, 비교예 4의 Al-30Si 합금과 비교했을 때, 실시예 1의 Al-30Si/AlN 복합재료 잉곳은 질화알루미늄이 형성되었음에도 열전도도의 감소가 크지 않은 것을 확인하였다.As shown in Fig. 6, compared to the Al-30Si alloy of Comparative Example 4, it was confirmed that the Al-30Si/AlN composite ingot of Example 1 did not show a significant decrease in thermal conductivity even though aluminum nitride was formed.
상기와 같은 결과를 통해 본 발명에 따른 경사기능구조를 가진 질화알루미늄 복합체는 열전도도가 높으며 열팽창계수가 낮아 방열소재에 적용할 수 있음을 확인하였다. Through the above results, it was confirmed that the aluminum nitride composite having a sloped functional structure according to the present invention has high thermal conductivity and a low coefficient of thermal expansion, and thus can be applied to heat dissipation materials.
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| KR1020230012017A KR20240119690A (en) | 2023-01-30 | 2023-01-30 | Aluminum matrix composite material with a functionally graded structure in which the distribution of aluminum nitride is controlled and its manufacturing method |
| KR10-2023-0012017 | 2023-01-30 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0097993A1 (en) * | 1982-06-22 | 1984-01-11 | SAMIM Società Azionaria Minero-Metallurgica S.p.A. | Process for producing an aluminium-silicon alloy from leucite |
| JPH07163866A (en) * | 1992-09-01 | 1995-06-27 | Inoue Akihisa | Ultrafine particle manufacturing method |
| JP2010180481A (en) * | 2010-04-12 | 2010-08-19 | Jatco Ltd | Surface treatment method for aluminum material |
| CN101880854A (en) * | 2010-05-27 | 2010-11-10 | 吉林大学 | A kind of surface layer of aluminum and aluminum alloy matrix aluminum nitride reinforced gradient composite material |
| KR20160083551A (en) * | 2014-12-31 | 2016-07-12 | 서울대학교산학협력단 | Fabricating method for nitride reinforced metal matrix composite materials by spontaneous substitution reaction and composite materials fabricated by the method |
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- 2023-01-30 KR KR1020230012017A patent/KR20240119690A/en not_active Ceased
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0097993A1 (en) * | 1982-06-22 | 1984-01-11 | SAMIM Società Azionaria Minero-Metallurgica S.p.A. | Process for producing an aluminium-silicon alloy from leucite |
| JPH07163866A (en) * | 1992-09-01 | 1995-06-27 | Inoue Akihisa | Ultrafine particle manufacturing method |
| JP2010180481A (en) * | 2010-04-12 | 2010-08-19 | Jatco Ltd | Surface treatment method for aluminum material |
| CN101880854A (en) * | 2010-05-27 | 2010-11-10 | 吉林大学 | A kind of surface layer of aluminum and aluminum alloy matrix aluminum nitride reinforced gradient composite material |
| KR20160083551A (en) * | 2014-12-31 | 2016-07-12 | 서울대학교산학협력단 | Fabricating method for nitride reinforced metal matrix composite materials by spontaneous substitution reaction and composite materials fabricated by the method |
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