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WO2024143947A1 - Matériau revêtu de carbure de tantale - Google Patents

Matériau revêtu de carbure de tantale Download PDF

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Publication number
WO2024143947A1
WO2024143947A1 PCT/KR2023/019663 KR2023019663W WO2024143947A1 WO 2024143947 A1 WO2024143947 A1 WO 2024143947A1 KR 2023019663 W KR2023019663 W KR 2023019663W WO 2024143947 A1 WO2024143947 A1 WO 2024143947A1
Authority
WO
WIPO (PCT)
Prior art keywords
tantalum carbide
substrate
buffer layer
carbide film
carbide composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2023/019663
Other languages
English (en)
Korean (ko)
Inventor
조동완
김정일
노형일
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Korea Co Ltd
Original Assignee
Tokai Carbon Korea Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Korea Co Ltd filed Critical Tokai Carbon Korea Co Ltd
Publication of WO2024143947A1 publication Critical patent/WO2024143947A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Definitions

  • a tantalum carbide composite material coated with tantalum carbide (TaC) on the surface of a carbon material generates stress due to the difference in thermal expansion coefficient between the carbon material and the tantalum carbide film, causing cracks and warping, which can cause damage and affect the lifespan of the parts to which it is applied.
  • tantalum carbide Parts coated with tantalum carbide (TaC) use a tantalum carbide composite material coated with tantalum carbide (TaC) on the surface of the carbon material.
  • tantalum carbide (TaC) and tantalum carbide (TaC) are used.
  • Carbon base materials with similar thermal expansion coefficients have been used.
  • the types of carbon substrates with a coefficient of thermal expansion similar to tantalum carbide are limited, so there are problems in applying them to tantalum carbide coating materials.
  • problems such as stress generation, bending, cracking, and peeling may occur.
  • the present disclosure introduces a buffer layer for stress relief between the substrate and the tantalum carbide film to reduce stress, bending, cracking, peeling, etc. of the tantalum carbide coating layer and the carbon substrate.
  • a relaxed tantalum carbide composite can be provided.
  • the present disclosure can provide a semiconductor manufacturing component that includes a tantalum carbide composite incorporating a buffer layer for stress relief and can improve life stability and the stability and process efficiency of the semiconductor manufacturing process.
  • the tantalum carbide composite includes a substrate; and a tantalum carbide film formed on at least one surface of the substrate. It includes a buffer layer between the substrate and the tantalum carbide film; It includes, and the buffer layer may include a material of van der Waals bond.
  • the thickness of the buffer layer may be 1 ⁇ m to 50 ⁇ m.
  • the thickness of the tantalum carbide film may be 10 ⁇ m to 100 ⁇ m.
  • the substrate may include at least one selected from the group consisting of graphene, graphite, and fullerene.
  • the warpage of the tantalum carbide composite may be 10 ⁇ m to 50 ⁇ m.
  • a method of measuring warpage of the tantalum carbide composite (a) Manufacturing a tantalum carbide coated product measuring 200 mm x 3 mm; (b) measuring the height of the product based on the upper half of a CMM measuring machine ( Coordinate Measuring Machine, 3D shape measuring machine); and (c) measuring 10 points at equal intervals of 0°, 60°, and 120°; It is a measurement method that includes a total of 30 points, which may include expressing the deviation of the measured value as bending.
  • the tantalum carbide film may be crack-free or may include cracks with a width of 0.3 ⁇ m to 0.6 ⁇ m.
  • the tantalum carbide composite may reduce the width size of cracks in the tantalum carbide film and reduce the occurrence of warpage by introducing a buffer layer for stress relief between the substrate (e.g., carbon substrate) and the tantalum carbide film.
  • components for semiconductor manufacturing have improved lifetime stability by applying a tantalum carbide composite material that introduces a buffer layer for stress relief between a substrate (e.g., carbon substrate) and a tantalum carbide film, and process stability in the semiconductor manufacturing process. And process efficiency can be improved.
  • Figure 2 exemplarily shows the configuration of a tantalum carbide composite material in which a tantalum carbide film is formed on the entire surface of the substrate, according to one embodiment.
  • Figure 3 shows a cross-sectional SEM image of a tantalum carbide composite, according to one embodiment.
  • FIGS. 4A, 4B, and 4C are SEM images of the surface of the tantalum carbide layer in a tantalum carbide composite, according to an embodiment.
  • FIG. 4A is an SEM image of Comparative Example 1
  • FIG. 4B is a SEM image of Example 4. This is an SEM image
  • Figure 4c is an SEM image of Example 1.
  • the buffer layer 200 may include one or two or more types of van der Waals bond materials.
  • the buffer layer 200 using a material of Van der Waals bond can alleviate the difference in physical properties (e.g., stress due to difference in thermal expansion coefficient) between the substrate 100 and the tantalum carbide film 300.
  • the occurrence of cracks (eg, bending) and peeling can be reduced by relieving stress caused by a difference in thermal expansion coefficient between the substrate 100 and the tantalum carbide film 300.
  • the thickness of the buffer layer 200 may be 1 ⁇ m to 50 ⁇ m.
  • the thickness of the buffer layer is 1 ⁇ m to 5 ⁇ m; 1 ⁇ m to 10 ⁇ m; 1 ⁇ m to 15 ⁇ m; 1 ⁇ m to 20 ⁇ m; 1 ⁇ m to 25 ⁇ m; 1 ⁇ m to 30 ⁇ m; 1 ⁇ m to 35 ⁇ m; 1 ⁇ m to 40 ⁇ m; 1 ⁇ m to 45 ⁇ m; Or it may be 1 ⁇ m to 50 ⁇ m.
  • the atomic ratio of Ta to C in the tantalum carbide film 300 may be 0.9 to 1.34:1, and by adjusting the atomic ratio, the surface energy of the tantalum carbide film is lowered to prevent contaminants from attaching to the process. It is possible to prevent damage to the substrate 100 due to plasma and corrosive gases in the environment (e.g., semiconductor manufacturing process) and improve the lifespan and process stability of parts using tantalum carbide composites.
  • the tantalum carbide film 300 may be heat treated after synthesis and/or deposition (e.g., CVD deposition), for example, at a temperature of 2000 °C to 2500 °C, in an inert gas (e.g., Ar gas) atmosphere. and heat treatment for 1 hour to 20 hours.
  • CVD deposition e.g., CVD deposition
  • an inert gas e.g., Ar gas
  • the tantalum carbide film 300 may have a thickness of 10 ⁇ m to 100 ⁇ m. in some examples 10 ⁇ m to 100 ⁇ m; 10 ⁇ m to 80 ⁇ m; 10 ⁇ m to 60 ⁇ m; 10 ⁇ m to 40 ⁇ m; Or it may be 10 ⁇ m to 20 ⁇ m.
  • the tantalum carbide film 300 may include cracks in at least one of the surface, interior, or contact surface with the buffer layer.
  • the surface of the tantalum carbide film 300 may include cracks.
  • the tantalum carbide film 300 may include microcracks with a width of 0.3 ⁇ m to 0.6 ⁇ m. For example, 0.3 ⁇ m to 0.55 ⁇ m; 0.3 ⁇ m to 0.5 ⁇ m; 0.3 ⁇ m to 0.4 ⁇ m; Alternatively, it may include fine cracks having a width of 0.3 ⁇ m to 0.35 ⁇ m.
  • the crack width refers to measuring the width of a fine crack occurring in a carbon material containing a tantalum carbide coating layer, and images of the crack area are obtained using SEM analysis equipment (e.g. SEM model name: JEOL, JSM-6390). It is observed at 2000x magnification and represents the average of the values measured at 10 points in the vertical direction of the gap between cracks.
  • the tantalum carbide film 300 may be crack-free in at least one of the surface, interior, or contact surface with the buffer layer.
  • the warpage of the tantalum carbide composite may be 10 ⁇ m to 50 ⁇ m. in some examples 10 ⁇ m to 50 ⁇ m; 10 ⁇ m to 40 ⁇ m; 10 ⁇ m to 30 ⁇ m; Or it may be 10 ⁇ m to 20 ⁇ m.
  • the method for measuring warpage of the tantalum carbide composite according to a preferred embodiment of the present invention is (a) Manufacturing a tantalum carbide coated product with a size of 200
  • a measurement method including the step of measuring 10 points at equal intervals may include expressing the deviation of the measured value of a total of 30 points as bending.
  • the coefficient of thermal expansion (CTE) of the tantalum carbide film 300 exceeds 6 x 10 -6 /K; 7 x 10 -6 /K; Or it may be more than 8 x 10 -6 /K.
  • the coefficient of thermal expansion (CTE) of the tantalum carbide film 300 is greater than 6 x 10 -6 /K to 7 x 10 -6 /K; 6.1 x 10 -6 /K to 7 x 10 -6 /K; Or it may be 6.3 x 10 -6 /K to 7 x 10 -6 /K.
  • the coefficient of thermal expansion (CTE) of the substrate 100 is 6 x 10 -6 /K or less; 5 x 10 -6 /K or less; Or it may be 4 x 10 -6 /K or less. In some examples, the coefficient of thermal expansion (CTE) of the substrate 100 may be 4 x 10 -6 /K to 6 x 10 -6 /K.
  • the tantalum carbide composite may include the content mentioned in the description of the tantalum carbide composite mentioned above.
  • the component may be a component used in a semiconductor process.
  • the component may be a component of single crystal SiC/AlN Epitaxy and SiC/AlN Growth process equipment.
  • the thermal expansion coefficient of the graphite substrate is 4.5x10 -6 /K, and a 15 ⁇ m thick pyrolytic carbon layer was deposited on the substrate by CVD deposition, and then a TaC layer was formed on the pyrolytic carbon layer by CVD deposition.
  • the thermal expansion coefficient of the graphite substrate is 4.5x10 -6 /K, and a pyrolytic carbon layer was deposited on the substrate to a thickness of 25 ⁇ m by CVD deposition, and then a TaC layer was formed on the pyrolytic carbon layer by CVD deposition.
  • the thermal expansion coefficient of the graphite substrate is 5.5x10 -6 /K, and a pyrolytic carbon layer was deposited on the substrate to a thickness of 5 ⁇ m by CVD deposition, and then a TaC layer was formed on the pyrolytic carbon layer by CVD deposition.
  • a TaC composite was prepared in the same manner as in Example 4 except that the buffer layer was not formed.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)

Abstract

La présente invention concerne un matériau revêtu de carbure de tantale, qui peut comprendre une couche tampon formée sur un substrat, et un film de carbure de tantale.
PCT/KR2023/019663 2022-12-29 2023-12-01 Matériau revêtu de carbure de tantale Ceased WO2024143947A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2022-0189403 2022-12-29
KR1020220189403A KR20240106512A (ko) 2022-12-29 2022-12-29 탄화탄탈 복합재

Publications (1)

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WO2024143947A1 true WO2024143947A1 (fr) 2024-07-04

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PCT/KR2023/019663 Ceased WO2024143947A1 (fr) 2022-12-29 2023-12-01 Matériau revêtu de carbure de tantale

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KR (1) KR20240106512A (fr)
TW (1) TW202426411A (fr)
WO (1) WO2024143947A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10506677A (ja) * 1994-09-28 1998-06-30 アドヴァンスト・セラミックス・コーポレイション 多層フラッシュエバポレーター
KR20070020225A (ko) * 2005-02-14 2007-02-20 토요 탄소 가부시키가이샤 탄화탄탈 피복 탄소재료 및 그 제조 방법
JP2014133919A (ja) * 2013-01-10 2014-07-24 Shin Etsu Chem Co Ltd 熱分解炭素被覆部材
KR20200067781A (ko) * 2020-05-27 2020-06-12 주식회사 티씨케이 CVD를 이용한 TaC 코팅층의 제조방법 및 그를 이용하여 제조한 TaC의 물성
WO2021117498A1 (fr) * 2019-12-12 2021-06-17 信越化学工業株式会社 Élément de graphite revêtu de carbonate de tantale et son procédé de production

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10506677A (ja) * 1994-09-28 1998-06-30 アドヴァンスト・セラミックス・コーポレイション 多層フラッシュエバポレーター
KR20070020225A (ko) * 2005-02-14 2007-02-20 토요 탄소 가부시키가이샤 탄화탄탈 피복 탄소재료 및 그 제조 방법
JP2014133919A (ja) * 2013-01-10 2014-07-24 Shin Etsu Chem Co Ltd 熱分解炭素被覆部材
WO2021117498A1 (fr) * 2019-12-12 2021-06-17 信越化学工業株式会社 Élément de graphite revêtu de carbonate de tantale et son procédé de production
KR20200067781A (ko) * 2020-05-27 2020-06-12 주식회사 티씨케이 CVD를 이용한 TaC 코팅층의 제조방법 및 그를 이용하여 제조한 TaC의 물성

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TW202426411A (zh) 2024-07-01
KR20240106512A (ko) 2024-07-08

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