WO2024029140A1 - Peltier element and electronic device comprising peltier element - Google Patents

Abstract

The present invention provides a Peltier element which has light transmissivity. This Peltier element is provided with a plurality of p-type semiconductor elements (10-1, 10-2), a plurality of n-type semiconductor elements (20-1, 20-2), first metal electrodes (31-1, 31-2), second metal electrodes (32-1, 32-2, 32-3) and insulating substrates (41, 42); the p-type semiconductor elements and the n-type semiconductor elements are alternately connected by the intermediary of the first metal electrodes and the second metal electrodes; the insulating substrates are arranged so as to cover surfaces of the first metal electrodes and the second metal electrodes, the surfaces being on the reverse side of contact surfaces of the first electrodes and the second electrodes, the contact surfaces being in contact with the p-type semiconductor elements or the n-type semiconductor elements; and the p-type semiconductor elements, the n-type semiconductor elements, the first metal electrodes, the second metal electrodes and the insulating substrates have light transmissivity.

Description

Peltier device and electronic device having Peltier device

The present invention relates to a Peltier element.

As an example of a Peltier device, Patent Document 1 describes a “Peltier device in which P-type and N-type thermoelectric material bodies are alternately connected via electrodes, in which the electrodes are formed of a conductive paste, and the P-type and an N-type thermoelectric material body embedded in the electrode. (Summary Excerpt)'' is disclosed.

Japanese Patent Application Publication No. 2015-095610

The Peltier device of Patent Document 1 mentioned above aims to improve the bonding strength between the electrode and the thermoelectric material, but the fact is that the light transmittance of the Peltier device itself is not taken into consideration.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a Peltier element having light transparency.

In order to solve the above problems, for example, the configuration described in the claims is provided. To give an example, a Peltier device includes a plurality of p-type semiconductor elements, a plurality of n-type semiconductor elements, a first metal electrode, a second metal electrode, and an insulating substrate, and includes the p-type semiconductor elements and Each of the n-type semiconductor elements is alternately connected via the first metal electrode and the second metal electrode, and the insulating substrate connects the p-type semiconductor elements at the first metal electrode and the second metal electrode. or disposed to cover a surface opposite to a contact surface with the n-type semiconductor element, each of the p-type semiconductor element and the n-type semiconductor element, the first metal electrode, the second metal electrode, and the The insulating substrate is characterized by having optical transparency.

Further, the present invention is an electronic device characterized by having the Peltier element described above.

According to the present invention, a Peltier element having light transparency can be provided. Problems, configurations, and effects other than those described above will be made clear by the following description of the embodiments.

FIG. 2 is a cross-sectional explanatory diagram in the thickness direction of the Peltier element according to the first embodiment. The figure which shows the example of a structure of the conventional Peltier element. FIG. 1 is a schematic configuration diagram of a HUD using a Peltier element according to the present embodiment. FIG. 7 is a diagram showing an example of application of a Peltier element in a second embodiment. FIG. 3 is a cross-sectional explanatory diagram in the thickness direction of a Peltier element according to a second embodiment. FIG. 7 is a cross-sectional explanatory diagram in the thickness direction of a Peltier element (modified example) according to the second embodiment. FIG. 7 is an explanatory cross-sectional view in the thickness direction of a Peltier element according to a third embodiment.

In all the figures for explaining the present invention, parts having the same functions are given the same reference numerals, and repeated explanations thereof may be omitted.

<First embodiment>
FIG. 1 is an explanatory cross-sectional view in the thickness direction of the Peltier element according to the first embodiment.

The Peltier device 1 includes a plurality of p-type semiconductor elements 10-1, 10-2, a plurality of n-type semiconductor elements 20-1, 20-2, first metal electrodes 31-1, 31-2, and a second metal electrode 32. -1, 32-2, 32-3, a first insulating substrate 41, and a second insulating substrate 42.

More specifically, the first metal electrodes 31-1 and 31-2 are arranged on the first insulating substrate 41. The p-type semiconductor element 10-1 and the n-type semiconductor element 20-1 are placed on the first metal electrode 31-1, and the p-type semiconductor element 10-2 and the n-type semiconductor element 20-1 are placed on the first metal electrode 31-2. Place. Furthermore, a second metal electrode 32-1 is arranged on the p-type semiconductor element 10-1, a second metal electrode 32-2 is arranged on the n-type semiconductor element 20-1 and the p-type semiconductor element 10-2, A second metal electrode 32-3 is placed on the type semiconductor element 20-2. Furthermore, a second insulating substrate 42 is placed on the second metal electrodes 32-1, 32-2, and 32-3. In other words, p-type semiconductor elements and n-type semiconductor elements are arranged alternately between two insulating substrates, and p-type semiconductor elements and n-type semiconductor elements are connected to the two insulating substrates via metal electrodes or metal junctions. is connected to. Metal electrodes and p-type and n-type semiconductor elements are alternately connected in a π-shape or an n-shape.

Since the p-type semiconductor elements 10-1 and 10-2 have the same configuration, the p-type semiconductor element 10-1 will be explained below as an example. Similarly, since the n-type semiconductor elements 20-1 and 20-2 have the same configuration, the n-type semiconductor element 20-1 will be explained below as an example.

The p-type semiconductor element 10-1 is constructed by coating the surface of the first support 11 with a p-type semiconductor 12 to form a p-type semiconductor film. Further, the p-type semiconductor film may be formed on a part of the surface of the first support 11, or the metal electrode-semiconductor-metal electrode may be electrically connected.

Similarly, the n-type semiconductor element 20-1 is constructed by coating the surface of the second support 21 with the n-type semiconductor 22 to form an n-type semiconductor film.

The first support 11 and the second support 21 are made of a light-transmitting member, such as transparent plastic, (PET: polyethylene terephthalate, PMMA: methacrylic acid methyl ester, PC: polycarbonate, COP: cycloolefin polymer, COC: cyclic olefin copolymer, etc.) are used.

For the p-type semiconductor 12 or the n-type semiconductor 22, a member having optical transparency, for example, a transparent conductive film material such as ATO, FTO, ITO, PEDOT:PSS, etc. is used. The thickness of the p-type semiconductor 12 or the n-type semiconductor 22 may be such that the light from the Peltier element 1 can be transmitted therethrough. Alternatively, the thickness of the p-type semiconductor 12 or the n-type semiconductor 22 is preferably such that it does not inhibit the light transmittance of the Peltier element 1, for example, the thickness is 100 nm or less.

As a result, the p-type semiconductor element 10-1 and the n-type semiconductor element 20-1 are formed as light-transmitting semiconductor elements.

The first metal electrodes 31-1, 31-2 and the second metal electrodes 32-1, 32-2, 32-3 are formed to have optical transparency. As an example, needle-shaped metals such as silver nanowires are used. The material of the first metal electrode and the second metal electrode may be any metal member that has optical transparency, and needle-like metals and silver nanowires are examples thereof, but are not limited thereto. Moreover, the materials of the first metal electrode and the second metal electrode may be different metal materials.

The first insulating substrate 41 and the second insulating substrate 42 are also formed of a light-transmitting member. For example, it is made of a light-transmitting member such as a glass plate or a transparent film.

The effects of the Peltier device according to the first embodiment will be explained in comparison with a conventional Peltier device. FIG. 2 is a diagram showing an example of the configuration of a conventional Peltier element.

The conventional Peltier device 100 has first metal electrodes 131-1 and 131-2 arranged on a first insulating substrate 141, and a p-type semiconductor element 111-1 and a p-type semiconductor element 111-1 on each of the first metal electrodes 131-1 and 131-2. 111-2, n-type semiconductor elements 121-1, 121-2 are arranged alternately, second metal electrodes 132-1, 132-2, 132-3 are placed on top of them, and second insulating substrate 142 is placed on top of them. It is constructed by laminating layers. In the conventional Peltier element 100, for example, ceramic is used for the first insulating substrate 141 and the second insulating substrate 142, and the material of the Peltier element 100 is bismuth telluride (Bi2Te3), lead telluride (PbTe), silicon germanium (SiGe), etc. ), bismuth-antimony alloy (Bi-Sb), etc. are used, and do not have light transmittance.

On the other hand, the Peltier device 1 according to the present embodiment includes p-type semiconductor elements 10-1, 10-2, n-type semiconductor elements 20-1, 20-2, first metal electrodes 31-1, 31-2, Since each component of the second metal electrodes 32-1, 32-2, 32-3, the first insulating substrate 41, and the second insulating substrate 42 has light transmittance, a Peltier layer is formed by laminating them. The element 1 can also be configured to have optical transparency. As a result, the light incident from the first insulating substrate 41 is emitted from the second insulating substrate 42, and the light incident from the second insulating substrate 42 is emitted from the first insulating substrate 41. Therefore, it is suitable as a cooling member for devices and elements through which light enters and exits, such as displays and photoelectric elements.

An application example of the Peltier element 1 according to this embodiment will be described with reference to FIG. 3. FIG. 3 is a schematic configuration diagram of a HUD using a Peltier element according to this embodiment.

As shown in FIG. 3, the Peltier device 1 according to the present embodiment may be applied to a head-up display device (hereinafter abbreviated as "HUD") 60 mounted on a vehicle. In this embodiment, an automobile will be used as the vehicle.

The automobile 70 includes a steering wheel 71, a dashboard 72 provided in front of the steering wheel 71, and a windshield 73, and houses a HUD 60 in the dashboard 72 for allowing the driver to visually recognize a virtual image 68.

The HUD 60 includes a light source 61, an illumination optical system 62, a display panel 63, a folding mirror 64, a concave mirror 65, and a mirror drive device 66. Light emitted from the light source 61 enters the illumination optical system 62, is collimated, and enters the display panel 63. Image light L containing image information displayed on the display panel 63 is emitted from the display panel 63 toward the folding mirror 64. The image light L is reflected from the folding mirror 64 toward the concave mirror 65. Further, the image light L is reflected by the concave mirror 65 and directed toward the windshield 73, and is reflected by the windshield 73 and enters the driver's eyes. This allows the driver to see the virtual image 68.

In the HUD 60, the temperature of the display panel 63 increases due to sunlight that enters in a direction opposite to the path of the image light L and the image light L, and there is a risk that the display panel 63 may be damaged. Therefore, by placing the endothermic surface of the Peltier element 1 according to this embodiment in contact with the display panel 63, it is possible to suppress the temperature rise of the display panel 63.

At that time, since the Peltier element 1 has optical transparency, it can be installed on the optical path and the panel surface of the display panel 63 can be directly cooled.

In FIG. 3, the display panel 63 is cooled by bringing the endothermic surface of the Peltier element 1 into contact with the collimated light incident surface of the display panel 63. Thereby, the display panel 63 can be cooled while preventing an adverse effect on the imaging performance, such as distortion of the image formed by the image light L.

In FIG. 3, the Peltier element 1 is applied to the HUD 60, but the Peltier element 1 according to the present embodiment can also be applied to other devices that require cooling while taking the optical path into consideration, such as televisions, organic EL, projectors, displays of PCs and mobile information terminals. is suitable. In this case, the Peltier element 1 may be placed in contact with the surface of the display panel facing the backlight in consideration of image forming properties.

Furthermore, in a television or an organic EL, the Peltier element 1 may be placed in a place where heat is easily dissipated. For example, if the lower part of a casing housing a television or organic El is a closed space, the Peltier element 1 may be placed on the top surface of the casing to prevent heat radiated from the Peltier element 1 from being trapped.

According to this embodiment, it is possible to impart light transparency to the Peltier element. Thereby, when installing in a device through which light enters and exits, the Peltier element can be placed even on the optical path.

Further, the first support 11 and the second support 21 of the Peltier element 1 according to the first embodiment have a solid structure to prevent scattering of light while passing through the first support 11 and the second support 21. Easier to suppress. As a result, for example, when the Peltier element 1 is placed on the surface facing the backlight of the display panel, scattering of light from the backlight on the optical path until it enters the display panel is suppressed, and the light is prevented from entering the display panel. Attenuation of the amount of light can be suppressed.

<Second embodiment>
The second embodiment is an embodiment related to a Peltier element suitable for a solar panel. FIG. 4 is a diagram showing an example of application of the Peltier element in the second embodiment.

In FIG. 4, the solar panel 80 is supported by a pedestal 81. Then, the heat absorbing surface of the Peltier element 1a according to the second embodiment is placed in contact with the sunlight incident surface of the solar panel 80.

The power generation efficiency of the solar panel 80 decreases as the panel temperature increases. By arranging the light-transmitting Peltier element 1a on the sunlight incident surface of the solar panel 80, the solar panel 80 can be cooled without interfering with the incidence of sunlight.

Furthermore, when it snows, snow accumulates on the solar panel 80, and the solar panel 80 is blocked by the snow, making it impossible to generate electricity. Therefore, by placing the Peltier element 1a on the sunlight incidence surface of the solar panel 80 and energizing the Peltier element 1a, the sunlight incidence surface of the Peltier element 1a radiates heat, and snow accumulates on the sunlight incidence surface of the Peltier element 1a. By melting the snow and eliminating the shading, it becomes possible to generate electricity.

FIG. 5 is an explanatory cross-sectional view in the thickness direction of the Peltier element according to the second embodiment.

The difference between the Peltier device 1 according to the first embodiment and the Peltier device 1a according to the present embodiment is that the first support 11a and the second support 21a are formed using a foam, and the second insulating substrate An uneven surface 44 is formed on the outer surface of 42, that is, the surface opposite to the contact surface with the second metal electrodes 32-1, 32-2, and 32-3. The location where the uneven surface 44 is formed is not limited to the surface opposite to the contact surface with the second metal electrodes 32-1, 32-2, and 32-3. For example, the uneven surface 44 is also formed on the side surface of the Peltier element 1a (not shown). may be formed.

In FIG. 5, p-type semiconductor elements 10a-1 and 10a-2 including supports made of foam and n-type semiconductor elements 20a-1 and 20a-2 also including supports made of foam are arranged alternately. Although the Peltier device 1a is illustrated, either one of the p-type semiconductor element and the n-type semiconductor element may include a support using a foam.

According to the Peltier element 1a according to the second embodiment, light transmittance can be imparted to the Peltier element. Furthermore, by using foam as the material for the first support 11a and the second support 21a, heat conduction between the second insulating substrate 42 on the heat radiation side and the first insulating substrate 41 on the heat absorption side is suppressed. The cooling performance of the Peltier element 1a can be further improved. Therefore, it is possible to provide a Peltier element suitable for a device such as the solar panel 80 in which light incident on the Peltier element 1a only needs to be incident on the solar panel 80 even if it is scattered.

Furthermore, by forming the outer surface of the second insulating substrate 42 into an uneven surface 44, the area in which the Peltier element 1a comes into contact with air can be increased compared to the case where the Peltier element 1a is formed in a planar shape, and heat dissipation can be improved. As a result, cooling performance and snow melting performance can be improved.

(Modified example of second embodiment)
FIG. 6 is an explanatory cross-sectional view in the thickness direction of a Peltier element (modified example) according to the second embodiment.

The difference between the Peltier element 1b shown in FIG. 6 and the Peltier element 1 according to the first embodiment is that the first support 11b and the second support 21b are formed in a hollow structure, and the p-type semiconductor element 10b-1 including them is , 10b-2, and n-type semiconductor elements 20b-1 and 20b-2 are arranged alternately. Only one of the p-type semiconductor elements 10b-1 and 10b-2 and the n-type semiconductor elements 20b-1 and 20b-2 may include a support using a foam.

This makes the cross section smaller than when the first support 11b and the second support 21b are formed in a solid structure, and furthermore, the air layer in the hollow part has a heat insulating effect, which absorbs heat from the heat radiation side. Heat conduction to the sides is suppressed, and the cooling performance of the Peltier element 1b is improved.

Although the outer surface of the second insulating substrate 42 is illustrated as planar in FIG. 6, it may have an uneven surface 44 as in the Peltier element 1a of FIG. Thereby, the heat dissipation performance of the Peltier element 1b can be further improved.

<Third embodiment>
The third embodiment relates to a Peltier element that has further flexibility. FIG. 7 is an explanatory cross-sectional view in the thickness direction of the Peltier element according to the third embodiment.

The difference between the Peltier element 1c shown in FIG. 7 and the Peltier element 1 according to the first embodiment is that the first support 11c and the second support 21c have a U-shaped cross section, and the first support 11c , the second support body 21c, the first insulating substrate 41c, and the second insulating substrate 42c are made of, for example, a transparent film, and the first metal electrodes 31c-1, 31c-2, the second metal electrodes 32c-1, 32c-2, 32c -3 is that flexibility is imparted to the Peltier element 1c by using silver nanowires.

The first support 11c and the second support 21c have a smaller cross-sectional area than the first support 11b and the second support 21c, which have a hollow prismatic cross section and are used in the Peltier element 1b according to the second embodiment. Therefore, heat conduction from the heat radiation side to the heat absorption side is suppressed, and the cooling performance of the Peltier element 1c is improved. Furthermore, the first support 11c and the second support 21c, which have a U-shaped cross section, are easier to deform than the hollow prismatic first support 11b and second support 21c, which improves flexibility. Connect.

The Peltier element 1c includes an adhesive layer 50 on the opposite surface (back surface) of the first insulating substrate 41c to the contact surface with the first metal electrodes 31c-1 and 31c-2. An optical transparent adhesive sheet (optical clear adhesive) is used as the adhesive layer 50 to ensure light transmittance.

According to the third embodiment, light transmittance and flexibility can be imparted to the Peltier element 1c. Since the flexible Peltier element 1c can be installed even on a curved surface, it can be applied to, for example, a film type solar cell.

Although the embodiments of the present invention have been described above, it goes without saying that the configuration for realizing the technology of the present invention is not limited to the above embodiments, and various modifications are possible.

Furthermore, the embodiments described above have been described in detail to explain the present invention in an easy-to-understand manner, and are not necessarily limited to those having all the configurations described. Furthermore, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. All of these belong to the scope of the present invention. Further, the numerical values, messages, etc. that appear in the text and figures are merely examples, and the effects of the present invention will not be impaired even if different values are used.

The embodiment includes the following embodiments.
(Additional note 1)
In the Peltier element,
A plurality of p-type semiconductor elements and a plurality of n-type semiconductor elements,
a first metal electrode and a second metal electrode;
comprising an insulating substrate;
Each of the p-type semiconductor element and the n-type semiconductor element is alternately connected via the first metal electrode and the second metal electrode,
The insulating substrate is disposed to cover a surface of the first metal electrode and the second metal electrode opposite to a contact surface with the p-type semiconductor element or the n-type semiconductor element,
Each of the p-type semiconductor element and the n-type semiconductor element, the first metal electrode, the second metal electrode, and the insulating substrate have optical transparency;
A Peltier element characterized by:

(Additional note 2)
Furthermore, an electronic device comprising the Peltier element described above.

1: Peltier element 1a: Peltier element 1b: Peltier element 1c: Peltier element 10a-1: p-type semiconductor element 10b-1: p-type semiconductor element 10-1: p-type semiconductor element 10-2: p-type semiconductor element 11: First support 11a: First support 11b: First support 11c: First support 12: P-type semiconductor 20a-1: N-type semiconductor element 20b-1: N-type semiconductor element 20-1: N-type semiconductor Element 20-2: N-type semiconductor element 21: Second support 21a: Second support 21b: Second support 21c: Second support 22: N-type semiconductor 31c-1: First metal electrode 31-1: First metal electrode 31-2: First metal electrode 32c-1: Second metal electrode 32-1: Second metal electrode 32-2: Second metal electrode 32-3: Second metal electrode 41: First insulating substrate 41c: First insulating substrate 42: Second insulating substrate 42c: Second insulating substrate 44: Uneven surface 50: Adhesive layer 61: Light source 62: Illumination optical system 63: Display panel 66: Drive device 68: Virtual image 70: Car 71: Handle 72 : Dashboard 73 : Windshield 80 : Solar panel 81 : Frame 100 : Peltier element 111-1 : P-type semiconductor element 121-1 : N-type semiconductor element 131-1 : First metal electrode 131-2 : First 1 metal electrode 132-1: 2nd metal electrode 132-2: 2nd metal electrode 132-3: 2nd metal electrode 141: 1st insulating substrate 142: 2nd insulating substrate L: Image light

Claims (9)

In the Peltier element,
A plurality of p-type semiconductor elements and a plurality of n-type semiconductor elements,
a first metal electrode and a second metal electrode;
comprising an insulating substrate;
Each of the p-type semiconductor element and the n-type semiconductor element is alternately connected via the first metal electrode and the second metal electrode,
The insulating substrate is disposed to cover a surface of the first metal electrode and the second metal electrode opposite to a contact surface with the p-type semiconductor element or the n-type semiconductor element,
Each of the p-type semiconductor element and the n-type semiconductor element, the first metal electrode, the second metal electrode, and the insulating substrate have optical transparency;
A Peltier element characterized by: The Peltier element according to claim 1,
The p-type semiconductor element includes a first support having optical transparency and a p-type semiconductor film on the surface of the first support,
The n-type semiconductor element includes a second support having optical transparency and an n-type semiconductor film on the surface of the second support.
A Peltier element characterized by: The Peltier element according to claim 2,
At least one of the first support and the second support is formed of a foam.
A Peltier element characterized by: The Peltier element according to claim 2,
At least one outer surface of the insulating substrate is formed as an uneven surface.
A Peltier element characterized by: The Peltier element according to claim 2,
At least one of the first support and the second support has a hollow structure.
A Peltier element characterized by: The Peltier element according to claim 2,
At least one of the first support and the second support has a U-shaped cross section including the first metal electrode and the second metal electrode.
A Peltier element characterized by: The Peltier element according to claim 2,
The p-type semiconductor film and the n-type semiconductor film are formed to have a thickness of 100 nm or less,
A Peltier element characterized by: The Peltier element according to claim 1,
the first metal electrode and the second metal electrode are formed including needle-like metal;
A Peltier element characterized by: An electronic device comprising the Peltier element according to any one of claims 1 to 8.

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