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WO2024078197A1 - Module de cellules solaires - Google Patents

Module de cellules solaires Download PDF

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Publication number
WO2024078197A1
WO2024078197A1 PCT/CN2023/116938 CN2023116938W WO2024078197A1 WO 2024078197 A1 WO2024078197 A1 WO 2024078197A1 CN 2023116938 W CN2023116938 W CN 2023116938W WO 2024078197 A1 WO2024078197 A1 WO 2024078197A1
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WIPO (PCT)
Prior art keywords
layer
transport layer
line
filled
scribing line
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PCT/CN2023/116938
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English (en)
Chinese (zh)
Inventor
解俊杰
刁一凡
吴兆
孙朱行
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Longi Green Energy Technology Co Ltd
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Longi Green Energy Technology Co Ltd
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Publication of WO2024078197A1 publication Critical patent/WO2024078197A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells

Definitions

  • the present application relates to the field of solar energy, and in particular to a solar cell assembly.
  • Thin-film cells with their low cost and high efficiency, have become another type of solar cell technology that is different from crystalline silicon cells.
  • their energy conversion efficiency has increased from 3.8% at the beginning of research to 25.7%, close to the highest efficiency level of crystalline silicon cells. Therefore, thin-film cells represented by perovskite cells are very likely to bring lower photovoltaic electricity costs and become an important direction for the future development of photovoltaic technology.
  • the output voltage of a single-junction solar cell is very small, which does not meet the requirements of practical application and cannot be used directly as a power source. Therefore, the development of large-area battery modules has become the current research trend.
  • a single battery cell is designed to be connected in series/parallel to obtain a higher voltage/current.
  • the series connection method generally requires the cell to be scribed, the current is led out through the lead end, and it is packaged to make a solar panel before it can be used normally.
  • the scribed thin-film solar cell module usually prepares the front film structure on the substrate in advance, and then the film layer is scribed and cut in different areas by laser, mechanical or other means to achieve the effect of multi-junction thin-film battery series connection.
  • the nearby film layers (light absorption layer, transmission layer, etc.) will be damaged around the cutting line. There are a large number of defects in the scribed area, which will become the capture and recombination center of photogenerated carriers.
  • this application involves the following aspects:
  • a solar cell module comprising
  • a first carrier transport layer, a light absorption layer, a second carrier transport layer and a second electrode layer are sequentially arranged on the first electrode layer;
  • a second scribing line passes through the first carrier transport layer, the light absorption layer, and the second carrier transport layer;
  • a third scribing line passes through the first carrier transport layer, the light absorption layer, the second carrier transport layer and the second electrode layer;
  • the first scribing line, the second scribing line and the third scribing line are arranged alternately;
  • the third scribe line is filled with a field passivation material.
  • the volume of the filled field passivation material accounts for 90%-100% of the volume of the third scribe line
  • the width of the third scribing line is 20-100 ⁇ m.
  • the field passivation material generates an electric dipole moment within its crystal lattice, and the electric dipole moment is deflected under the induction of an external electric field.
  • the field passivation material is selected from one or more of inorganic ferroelectric materials, organic ferroelectric materials, and composite materials composed of dielectric materials and ferroelectric materials.
  • the inorganic ferroelectric material is selected from one or more of barium titanate, strontium titanate, titanium oxide, lead zirconate titanate, lead magnesium niobate, sodium bismuth titanate, bismuth ferrite, and bismuth manganate.
  • the organic ferroelectric material is selected from one or two of polyvinylidene fluoride, its copolymer and copolyamide.
  • the remanent polarization intensity of the third scribed line filled with the field passivation material is greater than 1.6 ⁇ C/cm ⁇ 2 , preferably greater than 2.0 ⁇ C/cm ⁇ 2 .
  • the coercive electric field strength of the third scribe line filled with the field passivation material is greater than 30 kV ⁇ cm -1 .
  • the polarization direction of the third scribed line filled with the field passivation material is the same as the current direction in the adjacent battery.
  • the first scribe line is filled with the first carrier transport layer, and the second scribe line is filled with the second electrode layer;
  • the first carrier transport layer is a hole transport layer or an electron transport layer
  • the second carrier transport layer is a hole transport layer or an electron transport layer
  • the first carrier transport layer is different from the second carrier transport layer.
  • the third scribe line is filled with a field passivation material by using a mask and deposition process or a wet chemical process;
  • the deposition process is selected from one of magnetron sputtering, physical vapor deposition, chemical vapor deposition, thermal evaporation, and electron beam evaporation;
  • the wet chemical process is selected from one of screen printing, inkjet printing and dispensing.
  • the battery component is selected from one or more of a perovskite thin film battery, a copper indium gallium selenide battery, a copper zinc selenium sulfur battery, and a cadmium telluride battery.
  • the third scribe line of the present application is filled with a ferroelectric material having a spontaneous polarization characteristic. Based on the field passivation effect of the built-in electric field formed by the spontaneous polarization of the ferroelectric material, the carrier recombination in the lateral transmission process of the scribe line component is greatly reduced, and the device efficiency is improved. The capture and loss of photogenerated carriers by defects in the scratches and nearby thin film areas are reduced.
  • the third scribe line of the present application is filled with a ferroelectric material having a spontaneous polarization characteristic.
  • the spontaneous polarization layer is polarized, the directional dipole moment will be maintained, forming a built-in electric field inside it, which can exist stably for a long time, thereby achieving a field passivation effect.
  • the third scribe line of the present application is filled with a field passivation material of a ferroelectric material having a spontaneous polarization characteristic, and the direction of the built-in electric field generated by the spontaneous polarization is the same as the direction of the photogenerated current in the battery.
  • the photogenerated electrons and holes in the battery are not easily deviated and captured by a large number of defects in the loss area near the scratch, but tend to move vertically up and down. movement, thereby improving the extraction and transmission efficiency of electrons and holes and improving the energy conversion efficiency of components.
  • FIG1 is a cross-sectional structural diagram of an existing P-I-N structure thin-film battery line-connected series assembly
  • FIG2 is a cross-sectional structural diagram with a third scribed line in FIG1 ;
  • FIG3 is an enlarged view of a cross-sectional view of a battery assembly
  • FIG4 is a battery assembly of a P-I-N structure thin film battery filled with field passivation materials
  • FIG5 is a battery assembly of a N-I-P structure thin film battery filled with field passivation materials
  • FIG6 is a schematic diagram of the passivation principle of a field passivation material
  • FIG7 is an enlarged view of a schematic diagram of the passivation principle of a field passivation material of a P-I-N structure thin film battery
  • Figure 8 is a schematic diagram of the N-I-P structured perovskite thin film battery in Example 1.
  • Solar cells utilize the conversion of light energy into electrical energy.
  • Solar cells are formed in a PN junction, where a positive semiconductor (P) forms a junction with a negative semiconductor (N).
  • P positive semiconductor
  • N negative semiconductor
  • a solar cell receives light in a PN junction structure, holes and electrons are generated in the semiconductor due to the energy of the sunlight.
  • holes drift toward the P-type semiconductor, and electrons drift toward the N-type semiconductor. Therefore, electrical power is generated due to the occurrence of electric potential.
  • the P-I-N/N-I-P structure includes a P-type doped layer, an N-type doped layer, and an intrinsic semiconductor layer (undoped I layer) sandwiched between the P layer and the N layer.
  • Thin-film batteries are batteries that have thinned the structural elements of basic batteries. All structural elements of the positive electrode/electrolyte/negative electrode of thin-film batteries are in a solid state and are made into a thickness of about several microns ( ⁇ m) on a thin substrate through evaporation methods such as chemical vapor deposition (CVD) and physical vapor deposition (PVD). Thin-film solar cells are made by forming semiconductors in the form of thin films on glass substrates. The design and manufacture of thin-film batteries should adopt a line-drawing series path rather than the series welding connection method of amorphous silicon batteries.
  • a thin-film solar cell module includes a substrate layer 1 and a first electrode layer 2 located on one side of the substrate layer 1; a first carrier transport layer 3, a light absorption layer 4, a second carrier transport layer 5 and a second electrode layer 6 are sequentially arranged on the first electrode layer; a first scribed line P1, the first scribed line P1 passes through the first electrode layer 2; a second scribed line P2, the second scribed line P2 passes through the first carrier transport layer 3, the light absorption layer 4, the second carrier transport layer 5; a third scribed line P3, the third scribed line P3 passes through the first carrier transport layer 3, the light absorption layer 4, the second carrier transport layer 5 and the second electrode layer 6; the first scribed line P1, the second scribed line P2 and the third scribed line P3 are alternately arranged.
  • the thin film solar cell is divided into multiple cells by a plurality of third scribed lines P3, each of which is an independent functional unit including a first carrier transport layer, a light absorption layer, a second carrier transport layer and a second electrode layer arranged in a stacked manner; in any of the cells, the photogenerated holes in the light absorption layer 4 are transported from the first electrode layer 2 through the first carrier transport layer 3 The electrons are collected by the second electrode layer 6 through the second carrier transport layer 5.
  • the existence of the second scribed line P2 allows the second electrode layer 6 of any battery to contact the first electrode layer 2 of the adjacent battery. At the contact point, the electrons of any battery and the holes of the adjacent battery recombine to achieve the effect of connecting the two batteries in series.
  • a thin-film battery series assembly is formed.
  • a scribing thin-film solar cell module usually prepares a front film structure on a substrate layer in advance, and then the film layer is scribed and cut in different regions by laser, mechanical or other means to achieve the effect of multi-junction battery series connection.
  • damage will be caused to the nearby film layers (light absorption layer 4, first carrier transport layer 3, second carrier transport layer 5, etc.) around the cutting line.
  • 7 is the third scribing line P3 used for physically isolating two batteries by scribing. Damage areas 71 and 72 will be formed on both sides of the third scribing line P3, in which there are a large number of defects, which will become the capture and recombination centers of photogenerated carriers, as shown in FIG3 .
  • the present application fills the third scribing line P3 with a field passivation material.
  • the first scribed line P1 penetrates the first electrode layer 2 along the thickness direction
  • the second scribed line P2 continuously penetrates the first carrier transport layer 3, the light absorption layer 4, and the second carrier transport layer 5 along the thickness direction
  • the third scribed line P3 continuously penetrates the first carrier transport layer 3, the light absorption layer 4, the second carrier transport layer 5, and the second electrode layer 6 along the thickness direction.
  • the third scribed line P3 divides the thin film battery into multiple cells
  • the second scribed line P2 realizes the series connection between the multiple cells.
  • the staggered arrangement of the first scribing line P1, the second scribing line P2, and the third scribing line P3 means that in the vertical direction, the first scribing line P1, the second scribing line P2, and the third scribing line P3 are parallel but not overlapping, and are located in different horizontal planes.
  • Laser scribing is used on the first electrode layer 2 to form the first scribing line P1, and the first scribing line P1 penetrates the first electrode layer 2 in the thickness direction.
  • the first carrier transport layer 3 is subsequently set, the first carrier transport layer 3 is filled in the first scribing line P1.
  • the light absorption layer 4 and the second carrier transport layer 5 are sequentially set. Subsequently, laser scribing is used to prepare the second scribing line P2, and the second scribing line P2 continuously penetrates the second carrier transport layer 5, the light absorption layer 4, and the first carrier transport layer 3 in the thickness direction. At this time, the first scribing line P1 and the second scribing line P2 are staggered and spaced a certain distance apart in the vertical direction. Then, when the second electrode layer 6 is set, the second electrode layer 6 is filled in the second scribing line P2, and the third scribing line P3 is prepared by laser scribing.
  • the third scribing line P3 continuously penetrates the second electrode layer 6, the second carrier transport layer 5, the light absorption layer 4 and the first carrier transport layer 3 in the thickness direction. At this time, the first scribing line P1, the second scribing line P2 and the third scribing line P3 are staggered and spaced a certain distance apart in the vertical direction.
  • the thin film solar cell assembly includes a substrate layer 1 and a first electrode layer 2 located on one side of the substrate layer; a first carrier transport layer 3, a light absorption layer 4, a second carrier transport layer 5 and a second electrode layer 6 are sequentially arranged on the first electrode layer; at this time, the first carrier transport 3 is a hole transport layer, and the second carrier transport layer 5 is an electron transport layer.
  • the first scribed line P1, the first scribed line P1 penetrates the first electrode layer 2 along the thickness direction; the second scribed line P2, the second scribed line P2 penetrates the hole transport layer, the light absorption layer, and the electron transport layer along the thickness direction; the third scribed line P3, the third scribed line P3 penetrates the hole transport layer 3, the light absorption layer 4, the electron transport layer 5 and the second electrode layer 6 along the thickness direction; the first scribed line P1, the second scribed line P2 and the third scribed line P3 are arranged alternately (as shown in Figure 4).
  • the first scribed line P1 is filled with the hole transport layer 3
  • the second scribed line P2 is filled with the second electrode layer 6.
  • the thin-film solar cell is separated into multiple cells by multiple third scribed lines P3, and each cell is an independent functional unit including a stacked hole transport layer 3, a light absorption layer 4, an electron transport layer 5 and a second electrode layer 6; in any cell, the photogenerated holes in the light absorption layer 4 are collected by the first electrode layer 2 through the hole transport layer 3; the electrons are collected by the second electrode layer 6 through the electron transport layer 5.
  • the existence of the second scribed line P2 makes the second electrode layer 6 of any cell contact with the first electrode layer 2 of the adjacent cell. At the contact point, the electrons of any cell and the holes of the adjacent cell recombine to achieve the effect of connecting the two cells in series.
  • the third scribed line P3 is filled with field passivation material.
  • the thin film solar cell module includes a substrate layer 1 and a first electrode layer 2 located on one side of the substrate layer 1, and a first carrier transport layer 3, a light absorption layer 4, a second carrier transport layer 5 and a second electrode layer 6 are sequentially arranged on the first electrode layer; at this time, the first carrier transport layer 3 is an electron transport layer, and the second carrier transport layer 5 is a hole transport layer, and a first scribed line P1, the first scribed line P1 passes through the first electrode layer 2 along the thickness direction;
  • the second scribing line P2, the second scribing line P2 penetrates the electron transport layer 3, the light absorption layer 4, the hole transport layer 5 along the thickness direction;
  • the third scribing line P3, the third scribing line P3 penetrates the electron transport layer 3, the light absorption layer 4, the hole transport layer 5 and the second electrode layer 6 along the thickness direction;
  • the first scribing line P1, the second scribing line P2 and the third scribing line P3 are arranged alternately.
  • the first scribing line P1 is filled with the electron transport layer 3
  • the second scribing line P2 is filled with the second electrode layer 6.
  • the thin-film solar cell is separated by a plurality of third scribing lines P3 to form a plurality of cells, each of which is an independent functional unit including a stacked electron transport layer 3, a light absorption layer 4, a hole transport layer 5 and a second electrode layer 6; in any of the cells, the photogenerated holes in the light absorption layer 4 are collected by the first electrode layer 2 through the electron transport layer 3; and the electrons are collected by the second electrode layer 6 through the hole transport layer 5.
  • the existence of the second scribed line P2 enables the second electrode layer 6 of any battery to contact the first electrode layer 2 of the adjacent battery. At the contact point, the electrons of any battery and the holes of the adjacent battery recombine to achieve the effect of connecting the two batteries in series.
  • a thin-film battery series assembly is formed.
  • the field passivation material is filled in the third scribed line P3.
  • the first carrier transport layer 3 is a hole transport layer or an electron transport layer
  • the second carrier transport layer 5 is an electron transport layer or a hole transport layer
  • the first carrier transport layer 3 is different from the second carrier transport layer 5.
  • the second carrier transport layer 5 is an electron transport layer.
  • the second carrier transport layer 5 is a hole transport layer.
  • the volume of the filled field passivation material accounts for 90%-100% of the volume of the third scribed line; preferably 100%.
  • the field passivation material is partially filled in the third scribed line P3, there is a gap between the field passivation material and the battery structure on both sides, and the gap is either filled with air or with a later packaging material.
  • Both air and packaging materials are "barrier" layers between the passivation material and the photovoltaic cell, which have an adverse effect on the passivation effect of the passivation material. Therefore, when the passivation material is 100% completely filled in the third scribed line P3, the best field passivation effect can be achieved.
  • the characteristic size of the third scribing line P3 is in the micrometer level, that is, the width of the third scribing line P3 is in the micrometer level. Specifically, the width of the third scribing line P3 is 20-100 ⁇ m;
  • the width of the third scribing line P3 may be 20 ⁇ m, 21 ⁇ m, 22 ⁇ m, 23 ⁇ m, 24 ⁇ m, 25 ⁇ m, 26 ⁇ m, 27 ⁇ m, 28 ⁇ m, 29 ⁇ m, 30 ⁇ m, 31 ⁇ m, 32 ⁇ m, 33 ⁇ m, 34 ⁇ m, 35 ⁇ m, 36 ⁇ m, 37 ⁇ m, 38 ⁇ m, 39 ⁇ m, 40 ⁇ m, 41 ⁇ m, 42 ⁇ m, 43 ⁇ m, 44 ⁇ m, 45 ⁇ m, 46 ⁇ m, 47 ⁇ m, 48 ⁇ m, 49 ⁇ m, 50 ⁇ m, 51 ⁇ m, 52 ⁇ m, 53 ⁇ m, 54 ⁇ m, 55 ⁇ m, 56 ⁇ m, 57 ⁇ m, 58 ⁇ m, 59 ⁇ m, 60 ⁇ m, 61 ⁇ m, 62 ⁇ m, 63 ⁇ m, 64 ⁇ m, 65 ⁇ m, 66 ⁇ m, 67 ⁇ m, 68 ⁇ m, 69 ⁇ m, 70 ⁇ m,
  • the field passivation material is selected from one or more of an inorganic ferroelectric material, an organic ferroelectric material, and a composite material consisting of a dielectric material and a ferroelectric material.
  • the inorganic ferroelectric material is selected from one or more of barium titanate, strontium titanate, titanium oxide, lead zirconate titanate, lead magnesium niobate, sodium bismuth titanate, bismuth ferrite, and bismuth manganate.
  • the organic ferroelectric material is selected from one or two of polyvinylidene fluoride, its copolymer, and copolyamide.
  • the field passivation material is preferably an inorganic ferroelectric material.
  • the field passivation material generates an electric dipole moment inside its lattice, and the electric dipole moment is deflected under the induction of an external electric field.
  • the field passivation material has the characteristics of Figure 6a, that is, in its lattice, the centers of positive and negative charges do not overlap, thereby generating a certain electric dipole moment P inside the lattice; and this electric dipole moment P can be deflected under the induction of an external electric field (the dipole moment is a localized electric field, only the electric field exists, and there is no free moving charge, so it will not become a defect recombination center).
  • the field passivation material composition fills the third scribed line P3 (part 8 in Figure 4), the directions of the electric dipole moments P in different regions are different, usually in a randomly distributed state, and the passivation structure as a whole is electrically neutral to the outside, as shown in Figure 6b.
  • an external electric field E When an external electric field E is applied to a thin-film solar cell, its internal electric dipole moment P will be oriented, as shown in Figure 6c, and this process is called the "polarization" of the material.
  • the spontaneous polarization layer is polarized, the directional dipole moment will be maintained, forming a built-in electric field inside it, which can exist stably for a long time, thus achieving a field passivation effect.
  • the remanent polarization intensity of the third scribed line P3 filled with the field passivation material refers to the intensity P r of the directional spontaneous polarization formed inside the material after polarization is completed and in the absence of an external electric field, and the unit is ⁇ C/cm -2 .
  • the remanent polarization intensity is a characteristic parameter of the material. It can be obtained through literature and database query, or by testing actual samples with instruments.
  • the commonly used test instrument is the TF Analyzer 2000 ferroelectric analyzer produced by aixACCT in Germany.
  • the remanent polarization intensity of the third scribe line filled with the field passivation material is preferably greater than 2.0 ⁇ C/cm -2 ;
  • the remnant polarization intensity of the third scribe line filled with the field passivation material may be 1.61 ⁇ C/cm -2 , 1.7 ⁇ C/cm -2 , 1.8 ⁇ C/cm -2 , 1.9 ⁇ C/cm -2 , 2.0 ⁇ C/cm -2 , 2.1 ⁇ C/cm -2 , 2.2 ⁇ C/cm -2 , 2.3 ⁇ C/cm -2 , 2.4 ⁇ C/cm -2 , 2.5 ⁇ C/cm -2 , 2.6 ⁇ C/cm -2 , 2.7 ⁇ C/cm -2 , 2.8 ⁇ C/cm -2 , 2.9 ⁇ C/cm -2 or greater or any range therebetween.
  • the coercive field strength Ec of the third scribed line P3 filled with the field passivation material refers to the electric field strength corresponding to the built-in electric field of the field passivation material being twisted to 0 under the action of an external electric field, and the unit is generally: kV cm -1 .
  • the upper side surface of the third scribed line P3 filled with the field passivation material is in contact with the second electrode layer 6, and the lower side surface is in contact with the first electrode layer 2, and there is a certain electric field strength E between the upper and lower sides. Therefore, in the working state, only when the Ec of the third scribed line P3 filled with the field passivation material is greater than E, its built-in electric field can be maintained, thereby achieving the effect of field passivation.
  • the polarization direction is the same as the current direction in the adjacent battery.
  • the adjacent battery refers to the "left" and “right” single batteries separated by the third scribed line.
  • the polarization direction of the third scribed line 8 filling the field passivation material is from 6 to 1; when the battery structure is an N-I-P structure as shown in Figure 5, the polarization direction of 8 is from 1 to 6.
  • Polarizing the third scribed line P3 filled with the field passivation material applying a polarizing electric field to the upper and lower ends of the third scribed line P3 filled with the field passivation material, and gradually increasing the polarizing electric field to a saturated polarizing electric field corresponding to the field passivation material, so that the third scribed line P3 filled with the field passivation material can exert a maximum field passivation effect;
  • the third scribe line P3 is filled with field passivation material by using a mask and deposition process or a wet chemical process; preferably, the deposition process is selected from magnetron sputtering, physical vapor deposition, chemical vapor deposition, thermal evaporation, and electron beam evaporation; the wet chemical process is selected from screen printing, inkjet printing, and dispensing.
  • screen printing requires a mask plate, namely a "screen”; inkjet printing and dispensing do not require a mask plate.
  • the battery component is selected from one or more of a perovskite thin film battery, a copper indium gallium selenide battery, a copper zinc selenium sulfur battery, and a cadmium telluride battery.
  • the perovskite battery component of NIP structure includes a substrate layer 1 and a first electrode layer 2 located on one side of the substrate layer 1, on which an electron transport layer 3, a light absorption layer 4, a hole transport layer 5 and a second electrode layer 6 are sequentially arranged; a first scribed line P1, the first scribed line P1 penetrates the first electrode layer 2 along the thickness direction; a second scribed line P2, the second scribed line P2 penetrates the electron transport layer 3, the light absorption layer 4, and the hole transport layer 5 along the thickness direction; The third scribing line P3, the third scribing line P3 penetrates the electron transport layer 3, the light absorption layer 4, the hole transport layer 5 and the second electrode layer 6 in the thickness direction; the first scribing line P1, the second scribing line P2 and the third scribing line P3 are arranged alternately.
  • the first scribing line P1 is filled with the electron transport layer 3, and the second scribing line P2 is filled with the second electrode layer 6.
  • the thin-film solar cell is separated by a plurality of third scribing lines P3 to form a plurality of cells, each of which is an independent functional unit including a stacked electron transport layer 3, a light absorption layer 4, a hole transport layer 5 and a second electrode layer 6; in any of the cells, the photogenerated holes in the light absorption layer 4 are collected by the first electrode layer 2 through the electron transport layer 3; and the electrons are collected by the second electrode layer 6 through the hole transport layer 5.
  • the third scribing line P3 is filled with field passivation material.
  • the substrate layer 1 is a conductive glass substrate layer
  • the first electrode layer 2 is an ITO electrode layer
  • the electron transport layer 3 is a tin oxide electron transport layer
  • the light absorption layer 4 is a FAPbI 3 perovskite absorption layer
  • the hole transport layer 5 is a Spiro-OMeTAD hole transport layer
  • the second electrode layer 6 is an Au upper electrode
  • the first scribe line P1, the second scribe line P2, and the third scribe line P3 are prepared by laser scribing
  • the width of the scratch of the third scribe line P3 is 50 ⁇ m.
  • the field passivation material is a BaTiO 3 ferroelectric material.
  • BaTiO 3 After applying a mask plate on the component, it is deposited by magnetron sputtering to make the BaTiO 3 ferroelectric material fill the third scribe line P3 of the component.
  • Example 2 The difference between Example 2 and Example 1 is that the field passivation material is P (VDF-TrFE) copolymer ferroelectric material, and the other conditions are the same.
  • the field passivation material is P (VDF-TrFE) copolymer ferroelectric material
  • Example 3 The only difference between Example 3 and Example 1 is that the field passivation material is BiFeO 3 ferroelectric material, and the other conditions are the same.
  • Example 4 The only difference between Example 4 and Example 1 is that the field passivation material is Pb(Zr 0.3 Ti 0.7 )O 3 ferroelectric material, and the other conditions are the same.
  • Example 5 is a perovskite cell with a P-I-N structure, and the other conditions are the same.
  • Example 6 The only difference between Example 6 and Example 1 is that CIGS thin film solar cells are used, and the other conditions are the same.
  • Example 7 The only difference between Example 7 and Example 1 is that CdTe thin film solar cells are used, and the other conditions are the same.
  • Example 8 The only difference between Example 8 and Example 1 is that GaAs thin film solar cells are used, and the other conditions are the same.
  • Comparative Example 1 is not filled with any material.
  • the third scribed line P3 is filled with air.
  • Air does not have ferroelectricity, but air can also be very weakly polarized under an electric field, but the polarization will disappear as the external electric field is removed. Since the polarization strength is positively correlated with the dielectric constant, the polarization strength of the air and the polarization strength of the ferroelectric material can be qualitatively compared by comparing the dielectric constant.
  • the dielectric constant of air is 1, while the dielectric constant of BaTiO3 in Example 1 is between 4000-6000 (tetragonal phase); therefore, without filling any material, it basically has no passivation effect.
  • Comparative Example 2 is filled with EVA non-ferroelectric material.
  • EVA is a commonly used packaging material for photovoltaic modules, so EVA non-ferroelectric material is filled in Comparative Example 2.
  • Comparative Example 2 can also compare the polarization strength of EVA and BaTiO 3 by comparing the dielectric constants of the two.
  • the dielectric constant of EVA is usually between 1-10, while the dielectric constant of BaTiO 3 in Example 1 is between 4000-6000 (tetragonal phase); therefore, the passivation effect of EVA filling is far less than that of BaTiO 3 filling.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un module de cellules solaires, comprenant : une couche de substrat (1), et une première couche d'électrode (2), qui est située sur un côté de la couche de substrat (1), une première couche de transport de porteurs (3), une couche d'absorption de lumière (4), une seconde couche de transport de porteurs (5) et une seconde couche d'électrode (6) étant disposées séquentiellement sur la première couche d'électrode (2) ; une première ligne de traçage (P1) pénètre dans la première couche d'électrode (2) ; une deuxième ligne de traçage (P2) pénètre dans la première couche de transmission de porteurs (3), la couche d'absorption de lumière (4) et la seconde couche de transmission de porteurs (5) ; une troisième ligne de traçage (P3) pénètre dans la première couche de transmission de porteurs (3), la couche d'absorption de lumière (4), la seconde couche de transmission de porteurs (5) et la seconde couche d'électrodes (6) ; la première ligne de traçage (P1), la deuxième ligne de traçage (P2) et la troisième ligne de traçage (P3) sont disposées en quinconce ; et la troisième ligne de traçage (P3) est remplie d'un matériau de passivation de champ (8). La troisième ligne de traçage (P3) est remplie avec le matériau de passivation de champ (8), qui est d'un matériau ferroélectrique ayant une caractéristique de polarisation spontanée, ce qui permet de réduire considérablement la recombinaison de porteurs pendant un processus de transmission latérale d'un module de cellules solaires de traçage, d'améliorer l'efficacité du module de cellules solaires, et de réduire les captures et les pertes de porteurs générés par des photons en raison de rayures et de défauts de régions de film mince à proximité des rayures.
PCT/CN2023/116938 2022-10-13 2023-09-05 Module de cellules solaires Ceased WO2024078197A1 (fr)

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CN115548150B (zh) * 2022-10-13 2024-09-06 隆基绿能科技股份有限公司 太阳能电池组件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150249164A1 (en) * 2012-09-24 2015-09-03 Optitune Oy Method of forming functional coatings on silicon substrates
CN111900218A (zh) * 2020-07-10 2020-11-06 唐山科莱鼎光电科技有限公司 用于制备薄膜太阳能电池第二道刻线的方法
CN114695671A (zh) * 2022-03-29 2022-07-01 浙江爱旭太阳能科技有限公司 钙钛矿太阳能电池及其制备方法、光伏系统
CN114759063A (zh) * 2022-04-15 2022-07-15 浙江爱旭太阳能科技有限公司 一种太阳电池复合组件和光伏系统
CN115548150A (zh) * 2022-10-13 2022-12-30 隆基绿能科技股份有限公司 太阳能电池组件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7052941B2 (en) * 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
CN104051575B (zh) * 2014-06-20 2016-08-17 润峰电力有限公司 一种仿生双面受光太阳能电池的制作工艺
CN216120354U (zh) * 2021-10-11 2022-03-22 华能新能源股份有限公司 一种钙钛矿太阳能电池结构

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150249164A1 (en) * 2012-09-24 2015-09-03 Optitune Oy Method of forming functional coatings on silicon substrates
CN111900218A (zh) * 2020-07-10 2020-11-06 唐山科莱鼎光电科技有限公司 用于制备薄膜太阳能电池第二道刻线的方法
CN114695671A (zh) * 2022-03-29 2022-07-01 浙江爱旭太阳能科技有限公司 钙钛矿太阳能电池及其制备方法、光伏系统
CN114759063A (zh) * 2022-04-15 2022-07-15 浙江爱旭太阳能科技有限公司 一种太阳电池复合组件和光伏系统
CN115548150A (zh) * 2022-10-13 2022-12-30 隆基绿能科技股份有限公司 太阳能电池组件

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