WO2023284370A1 - Folding-type mach-zehnder modulator - Google Patents
Folding-type mach-zehnder modulator Download PDFInfo
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- WO2023284370A1 WO2023284370A1 PCT/CN2022/090210 CN2022090210W WO2023284370A1 WO 2023284370 A1 WO2023284370 A1 WO 2023284370A1 CN 2022090210 W CN2022090210 W CN 2022090210W WO 2023284370 A1 WO2023284370 A1 WO 2023284370A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0311—Structural association of optical elements, e.g. lenses, polarizers, phase plates, with the crystal
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
Definitions
- the present disclosure relates to the technical field of optical communication, in particular to a folded Mach-Zehnder modulator.
- the electro-optic modulator is a modulator based on the electro-optic effect of electro-optic materials.
- the electro-optic effect means that when a voltage is applied to an electro-optic material such as lithium niobate crystal, gallium arsenide crystal or lithium tantalate crystal, the refractive index of the electro-optic material will change, which in turn causes the characteristics of the light wave passing through the electro-optic material to change. .
- the modulation of optical signal parameters such as phase, amplitude, intensity, and polarization state can be realized.
- the Mach-Zehnder modulator is a kind of electro-optic modulator, which divides the input optical signal into two branch optical signals, so that they enter two waveguide arms respectively.
- the two waveguide arms are made of electro-optic materials, and their refractive index varies with varies with modulation voltage.
- the change of the refractive index of the waveguide arm will cause the phase change of the branch optical signal. Therefore, the output of the two branch optical signals is an interference signal whose intensity varies with the modulation voltage.
- the Mach-Zehnder modulator can achieve modulation of different sidebands by controlling the modulation voltage applied to the two waveguide arms.
- Mach-Zehnder modulator as a device that converts electrical signals into optical signals, is one of the common core devices in optical interconnection, optical computing, and optical communication systems.
- An embodiment of the present disclosure provides a folded Mach-Zehnder modulator, including N radio frequency modulation areas extending along the length direction and N-1 turning areas, N ⁇ 2, the folded Mach-Zehnder modulator includes: a light splitting element, It includes a first input end, a first output end and a second output end; an optical combination element includes a second input end, a third input end and a third output end; the first waveguide arm and the second waveguide arm are made of electro-optic material And the overall shape is folded, the first waveguide arm and the second waveguide arm intersect integrally in each turning area, the first waveguide arm connects the first output end and the second input end, the second waveguide arm connects the second output end and the third The input terminal; and, the radio frequency electrode, including the first ground electrode, the first signal electrode and the second ground electrode which are folded and arranged in sequence without crossing, and in each radio frequency modulation area, the first ground electrode and the first signal electrode The second ground electrode and the first signal electrode are configured to apply a radio frequency voltage to
- the first waveguide arm and the second waveguide arm intersect vertically in one piece at each turning region.
- the first ground electrode, the first signal electrode and the second ground electrode are bent in a concentric arc shape in the turning area.
- the first waveguide arm and the second waveguide arm are synchronized with the turns of the first ground electrode, the first signal electrode, and the second ground electrode; or, the first waveguide arm and the second waveguide arm are compared to the first ground electrode The turns of the electrode, the first signal electrode and the second ground electrode lag; or, the turns of the first waveguide arm and the second waveguide arm lead compared to the turns of the first ground electrode, the first signal electrode and the second ground electrode.
- the folded Mach-Zehnder modulator includes a substrate, an isolation layer, a waveguide layer, an electrode layer, an insulating material layer, and a bridge layer arranged in sequence, wherein the first waveguide arm and the second waveguide arm are located between the waveguide layer; a part of the first signal electrode is located in the electrode layer, and a part is located in the bridge layer, and the part of the first signal electrode located in the bridge layer is electrically connected with the part of the first signal electrode located in the electrode layer, and is perpendicular to the substrate direction, the part of the first signal electrode located on the bridge layer overlaps with the first waveguide arm and the second waveguide arm.
- a part of the first ground electrode is located on the electrode layer, and a part is located on the bridge layer, and the part of the first ground electrode located on the bridge layer is electrically connected to the part of the first ground electrode located on the electrode layer.
- the part of the first ground electrode located on the bridge layer overlaps with the first waveguide arm and the second waveguide arm.
- a part of the second ground electrode is located on the electrode layer, and a part is located on the bridge layer, and the part of the second ground electrode located on the bridge layer is electrically connected to the part of the second ground electrode located on the electrode layer, vertically In the direction of the substrate, the part of the second ground electrode located on the bridge layer overlaps with the first waveguide arm and the second waveguide arm.
- the first ground electrode is located on the electrode layer, and in a direction perpendicular to the substrate, the first ground electrode does not overlap with the first waveguide arm and the second waveguide arm.
- a part of the first ground electrode is located on the electrode layer, and a part is located on the bridge layer, and the part of the first ground electrode located on the bridge layer is electrically connected to the part of the first ground electrode located on the electrode layer.
- the part of the first ground electrode located on the bridge layer does not overlap with the first waveguide arm and the second waveguide arm.
- the second ground electrode is located on the electrode layer, and in a direction perpendicular to the substrate, the second ground electrode does not overlap with the first waveguide arm and the second waveguide arm.
- a part of the second ground electrode is located on the electrode layer, and a part is located on the bridge layer, and the part of the second ground electrode located on the bridge layer is electrically connected to the part of the second ground electrode located on the electrode layer, vertically In the direction of the substrate, the part of the second ground electrode located on the bridge layer does not overlap with the first waveguide arm and the second waveguide arm.
- the waveguide layer is a ridge waveguide layer, including a slab layer and a ridge layer located on the slab layer, the first waveguide arm and the second waveguide arm are located on the ridge layer, and the electrode layer is formed on the slab layer away from the substrate. bottom surface.
- the waveguide layer is a ridge waveguide layer, including a slab layer and a ridge layer on the slab layer, the first waveguide arm and the second waveguide arm are located on the ridge layer, the slab layer has grooves, and the electrode layer is embedded In the groove.
- the waveguide layer is a ridge layer including a first waveguide arm and a second waveguide arm
- the electrode layer is formed on the surface of the isolation layer away from the substrate.
- the folded Mach-Zehnder modulator further includes: a phase compensation modulation module disposed between the radio frequency electrode and the light splitting element, or between the radio frequency electrode and the light combining element.
- Fig. 1 is a simplified structural top view of a traditional Mach-Zehnder modulator
- FIG. 2 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to some exemplary embodiments of the present disclosure
- Fig. 3 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to other exemplary embodiments of the present disclosure
- Fig. 4 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to some other exemplary embodiments of the present disclosure
- FIG. 5 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to still some exemplary embodiments of the present disclosure.
- Fig. 6 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to some other exemplary embodiments of the present disclosure.
- FIG. 1 it is a schematic structural diagram of a traditional Mach-Zehnder modulator.
- the two waveguide arms 02 of the Mach-Zehnder modulator 001 are absolutely identical.
- the electro-optic effect does not occur in the two waveguide arms 02, and the input light is divided into two branch optical signals after passing through the optical splitting element 01, and the two branch optical signals pass through a waveguide arm 02 respectively.
- the rear phases are still the same, therefore, the coherence enhancement signal of the two branch optical signals will be output from the light combining element 05 .
- the modulation electrode 04 (for example, including the signal electrode 040, the first ground electrode 041 and the second ground electrode 042) applies a modulation voltage to the two waveguide arms 02, and the two branch optical signals pass through a
- the phase difference behind the waveguide arm 02 can be an odd or even multiple of ⁇ .
- the light combining element 05 outputs the coherence enhancement signal of the two branch optical signals.
- the optical combination Element 05 outputs the coherent cancellation signal of the two branch optical signals.
- this traditional Mach-Zehnder modulator is slender, its length is usually on the order of millimeters or centimeters, and its width is usually on the order of hundreds of microns.
- the driving voltage will also be designed to increase the length of the two waveguide arms.
- the width of the Mach-Zehnder modulator is small, its overall size is still mainly determined by the length. Therefore, how to realize the miniaturization design of the device without affecting the performance of the device is an urgent problem for those skilled in the art. technical problem.
- the embodiment of the present disclosure provides a folded Mach-Zehnder modulator, which can realize the miniaturization design of the device on the premise of meeting the performance requirements of the device.
- the main structure of the folded Mach-Zehnder modulator 1 includes a light splitting element 210, a light combining element 220, a first waveguide arm 310, a second waveguide arm 320, and a radio frequency electrode, wherein the radio frequency electrode includes a first ground electrode 410, a first signal electrode 430 and the second ground electrode 420 .
- the light splitting element 210 includes a first input end 211 , a first output end 212 and a second output end 213
- the light combining element 220 includes a second input end 221 , a third input end 222 and a third output end 223
- the first waveguide arm 310 is connected to the first output end 212 and the second input end 221
- the second waveguide arm 320 is connected to the second output end 213 and the third input end 223 .
- the material of the first waveguide arm 310 and the second waveguide arm 320 is electro-optic material and is folded as a whole, and the first waveguide arm 310 and the second waveguide arm 320 intersect integrally in each turning area 102 .
- the specific structural form of the light splitting element 210 is not limited, it includes at least one input end and two output ends, for example, it may be a light splitting element with one input and two outputs.
- the specific structural form of the light combining element 220 is not limited, it includes at least two input ports and one output port, for example, it may be a light combining element with two inputs and one output or a light combination element with two inputs and three outputs, and so on.
- the first ground electrode 410 , the first signal electrode 430 and the second ground electrode 420 are folded as a whole and arranged in sequence without crossing.
- the radio frequency electrodes that is, the first ground electrode 410, the first signal electrode 430 and the second ground electrode 420 as a whole
- each An overlapping area is a radio frequency modulation area 101.
- the first ground electrode 410 and the first signal electrode 430 are configured to apply a radio frequency voltage to the first waveguide arm 310
- the second ground electrode 420 and the first signal electrode 430 are configured to apply radio frequency voltage to the second waveguide arm 320. Voltage.
- the folded Mach-Zehnder modulator 1 provided by the embodiment of the present disclosure can greatly reduce the size in the length direction compared with the traditional Mach-Zehnder modulator due to the folded design.
- the length of the waveguide arm can be designed to increase according to the requirement, and the overall length of the device is less affected.
- Both the first waveguide arm 310 and the second waveguide arm 320 are made of electro-optical materials, such as lithium niobate, lithium tantalate, or potassium titanyl phosphate. Since the refractive index change of the electro-optical material is related to the direction of the electric field, if the first waveguide arm 310 and the second waveguide arm 320 are not crossed in the turning area 102, then, in the next radio frequency modulation area 101 after the turning area 102, the two waveguides The arms will be in opposite electric fields so that the resulting phase differences cancel each other out.
- electro-optical materials such as lithium niobate, lithium tantalate, or potassium titanyl phosphate. Since the refractive index change of the electro-optical material is related to the direction of the electric field, if the first waveguide arm 310 and the second waveguide arm 320 are not crossed in the turning area 102, then, in the next radio frequency modulation area 101 after the turning area 102, the two waveguides The arms will be in opposite
- the first waveguide arm 310 and the second waveguide arm 320 need to be designed as a cross structure in the turning area 102 to ensure that the direction of the electric field where the two waveguide arms are located in each radio frequency modulation area 101 remains unchanged.
- the electric field formed by the first signal electrode 430 and the first ground electrode 410, and the electric field formed by the first signal electrode 430 and the second ground electrode 420 are respectively shown by the dotted arrows in the figure. It can be seen that , the direction of the electric field of each waveguide arm in each radio frequency modulation region 101 is the same.
- the first waveguide arm 310 and the second waveguide arm 320 are made of the same material and are integrally intersected in each turning area 102 , which can reduce light transmission in the first waveguide arm 310 and the second waveguide arm 320 respectively.
- the transmission loss and the reduction of crosstalk between each other are beneficial to improve the performance of the device.
- the integral cross structure of the first waveguide arm 310 and the second waveguide arm 320 can be formed through an etching process of the waveguide layer.
- the first waveguide arm 310 and the second waveguide arm 320 each have a circular arc shape and intersect each other in each turning area 102 .
- the first waveguide arm 310 and the second waveguide arm 320 are vertically intersected in each turning area 102, so that at the intersection, the angle between any adjacent waveguide branches is 90 degrees, so that the waveguide Transmission interference between branches is minimized.
- the two waveguide arms intersect in the turning area 102, the propagation of light in the two waveguide arms is still roughly in accordance with the extension direction of the waveguide arms, which is slightly affected by the intersection structure and the transmission loss is small.
- the present disclosure does not limit the cross shape of the first waveguide arm 310 and the second waveguide arm 320 to the above-mentioned embodiments, for example, in some embodiments, the first waveguide arm and the second waveguide arm can also be zigzag in each turning area cross.
- the first ground electrode 410, the first signal electrode 430 and the second ground electrode 420 are bent in the shape of concentric arcs in the turning area 102, which is convenient for processing on the one hand, and on the other hand On the one hand, the loss of electrical transmission can be minimized.
- the present disclosure does not specifically limit this, and the first ground electrode, the first signal electrode and the second ground electrode may also be designed in other shapes in the turning area.
- the first waveguide arm 310 and the second waveguide arm 320 are compared with the first waveguide arm 320
- the turning settings of a ground electrode 410, the first signal electrode 430 and the second ground electrode 420 may be synchronous, lagging or leading.
- the radio frequency electrode applies radio frequency voltage to the first waveguide arm 310 and the second waveguide arm 320 of the electro-optical material according to the electrical signal of the radio frequency circuit, so as to realize the phase modulation of the optical signal transmitted in the first waveguide arm 310 and the second waveguide arm 320 .
- the transmission rates of the two in the radio frequency modulation area 101 may be mismatched.
- the transmission rate of the light field and the electric field can be matched by designing ⁇ L1 or ⁇ L2, where V electric is the transmission rate of the electric field, V light is the transmission rate of the light field, L is the size of the radio frequency modulation area along the length direction, and ⁇ L1 is The dimension along the length direction of the turning area of the two waveguide arms when the turn lags behind the RF electrode, ⁇ L2 is the lengthwise dimension of the turn area of the radio frequency electrode when the turn lags behind that of the two waveguide arms.
- the above-mentioned difference in the transmission rate can be compensated by designing the turning sequence of the first waveguide arm 310 and the second waveguide arm 320 compared with the first ground electrode 410 , the first signal electrode 430 and the second ground electrode 420 , to match the transmission of the light field and the electric field in the radio frequency modulation region 101 , thereby improving the device performance of the folded Mach-Zehnder modulator 1 .
- the layer structure of the folded Mach-Zehnder modulator 1 in some embodiments of the present disclosure includes: a substrate 510, an isolation layer 520, a waveguide layer 530, an electrode layer 540, an insulating material layer 550 and an electrical Bridge layer 560.
- the waveguide layer 530 can be the ridge waveguide layer shown in the figure, including a flat layer and a ridge layer 531 located on the flat layer.
- the flat layer and the ridge layer 531 are an integral structure formed by etching, and the pattern of the electrode layer 540 is formed on the surface of the plate layer away from the substrate 510 .
- the waveguide layer is a ridge waveguide layer, including a slab layer and a ridge layer located on the slab layer, the slab layer and the ridge layer are an integral structure formed by etching, and the first waveguide arm and the second waveguide arm are located on the ridge layer, the plate layer has patterned grooves, and the electrode layer is embedded in the grooves.
- the waveguide layer may not include a flat layer but only include a ridge layer, and the ridge layer includes a first waveguide arm and a second waveguide arm, so that the electrode layer can be formed on the surface of the isolation layer away from the substrate.
- the first waveguide arm 310 and the second waveguide arm 320 are located on the ridge layer 531 , specifically some ridge patterns of the ridge layer 531 .
- the multimode interference waveguide used for light splitting of the light splitting element 210 and the multimode interference waveguide used for light combining of the light combining element 220 are also located in the waveguide layer 530, specifically some ridges of the ridge layer 531 Convex pattern.
- the design of the specific structure of the folded Mach-Zehnder modulator 1 is also different for different design of the turning position, but they all need to satisfy: the intersection of the first waveguide arm 310 and the second waveguide arm 320 in the turning area 102, and the avoidance of the first ground electrode 410 , the first signal electrode 430 and the second ground electrode 420 physically cross the first waveguide arm 310 and the second waveguide arm 320 .
- the first waveguide arm 310 and the second waveguide arm 320 are synchronized with the turning of the first ground electrode 410 , the first signal electrode 430 and the second ground electrode 420 , and in the turning area 102 ,
- the first waveguide arm 310 , the second waveguide arm 320 , the first ground electrode 410 , the first signal electrode 430 and the second ground electrode 420 are curved according to their respective radii of curvature and start to turn and end to turn at the same time.
- a part of the first signal electrode 430 is located on the electrode layer 540, a part is located on the bridge layer 560, and the part located on the bridge layer 560 is electrically connected to the part located on the electrode layer 540, for example, through the via structure 551 electrical connection.
- the via structure is a plurality of through holes formed on the insulating material layer 550 .
- the first signal electrode 430 includes a first body portion 1 a located on the electrode layer 540 and a first bridge portion 1 b located on the bridge layer 560 and electrically connected to the first body portion 1 a through the via structure 551 .
- the first body part 1a includes two strip-shaped electrode areas extending along the length direction, and the first bridge part 1b is curved.
- the whole of the first ground electrode 410 is located on the electrode layer 540
- the whole of the second ground electrode 420 is located on the electrode layer 540 .
- the first body part 1a has no overlap with the first waveguide arm 310 and the second waveguide arm 320
- the first bridge part 1b has overlap with the first waveguide arm 310 and the second waveguide arm 320.
- overlap, the first ground electrode 410 and the second ground electrode 420 do not overlap with the first waveguide arm 310 and the second waveguide arm 320 .
- the first bridge part 1b overlaps with the first waveguide arm 310 and the second waveguide arm 320 in the direction perpendicular to the substrate 510, since the first bridge part 1b overlaps with the first waveguide arm 310 and the second waveguide arm 310, the second The waveguide arms 320 are in different structural layers, therefore, there is no intersection in reality.
- the difference in structure is that the first ground electrode and the second ground electrode also adopt a bridge structure design.
- the first ground electrode includes a second body part located on the electrode layer and a second bridge part located on the bridge layer and electrically connected to the second body part (for example, electrically connected through a via structure), and the second body part also includes There are two strip-shaped electrode areas extending along the length direction, and the second electric bridge part is curved.
- the second ground electrode includes a third body part located on the electrode layer and a third bridge part located on the bridge layer and electrically connected to the third body part (for example, electrically connected through a via structure), and the third body part is also It includes two strip-shaped electrode areas extending along the length direction, and the third electric bridge part is curved. In this way, the impedance mismatch that may exist in the first ground electrode, the first signal electrode, and the second ground electrode can be improved, which is beneficial to further improving the performance of the device.
- N 2
- the first waveguide arm 310 and the second waveguide arm 320 are synchronized with the turns of the first ground electrode 410 , the first signal electrode 430 and the second ground electrode 420 .
- a part of the first signal electrode 430 is located on the electrode layer 540, and a part is located on the bridge layer 560, and the part of the first signal electrode 430 located on the bridge layer 560 and the part of the first signal electrode 430 located on the electrode layer 540 Some of the parts are electrically connected, for example, through the via structure 551 .
- a part of the first ground electrode 410 is located in the electrode layer 540, a part is located in the bridge layer 560, and the part of the first ground electrode 410 located in the bridge layer 560 is electrically connected with the part of the first ground electrode 410 located in the electrode layer 540, for example They are electrically connected through the via structure 551 .
- the part of the first signal electrode 430 located on the bridge layer 560 and the part of the first ground electrode 410 located on the bridge layer 560 are connected to the first waveguide arm 310 and the second waveguide arm 320. There is overlap, and the second ground electrode 420 does not overlap with the first waveguide arm 310 and the second waveguide arm 320 .
- the first signal electrode 430 includes a first body part 1a located on the electrode layer 540 and a first bridge part 1b located on the bridge layer 560 and electrically connected to the first body part 1a through a via structure 551.
- the first body The part 1a includes two strip-shaped electrode areas extending along the length direction, and the first bridge part 1b is curved.
- the first ground electrode 410 includes a second body part 2a located on the electrode layer 540 and a second bridge part 2b located on the bridge layer 560 and electrically connected to the second body part 2a through a via structure 551, the second body The part 2a also includes two strip-shaped electrode areas extending along the length direction, and the second bridge part 2b is curved.
- the second ground electrode 420 includes a third body part 3a located on the electrode layer 540 and a third bridge part 3b located on the bridge layer 560 and electrically connected to the third body part 3a through the via structure 551.
- the third body The part 3a also includes two strip-shaped electrode areas extending along the length direction, and the third bridge part 3b is curved.
- the first body part 1a, the second body part 2a, and the third body part 3a do not overlap with the first waveguide arm 310 and the second waveguide arm 320, and the first bridge part 1b , the second bridge part 2b overlap with the first waveguide arm 310 and the second waveguide arm 320 , and the third bridge part 3b does not overlap with the first waveguide arm 310 and the second waveguide arm 320 .
- the second ground electrode since the second ground electrode does not overlap with the first waveguide arm and the second waveguide arm, the second ground electrode may not be designed with a bridge structure, but may be entirely located on the electrode layer.
- the first waveguide arm 310 and the second waveguide arm 320 lag behind the turning of the first ground electrode 410 , the first signal electrode 430 and the second ground electrode 420 ,
- the first ground electrode 410, the first signal electrode 430, and the second ground electrode 420 are designed to be curved according to their respective curvature radii, and start turning and end turning at the same time, while the first waveguide arm 310 and the second waveguide arm 310
- the arm 320 is then extended along the length direction for a certain period before turning.
- the first signal electrode 430 includes a first body part 1a located on the electrode layer 540 and a first bridge part 1b located on the bridge layer 560 and electrically connected to the first body part 1a through a via structure 551.
- the first body The part 1a includes two strip-shaped electrode areas extending along the length direction, and the first bridge part 1b is curved.
- the first ground electrode 410 includes a second body part 2a located on the electrode layer 540 and a second bridge part 2b located on the bridge layer 560 and electrically connected to the second body part 2a through a via structure 551.
- the second body part 2a includes There are two strip-shaped electrode areas extending along the length direction, and the second bridge part 2b is curved.
- the second ground electrode 420 includes a third body part 3a located on the electrode layer 540 and a third bridge part 3b located on the bridge layer 560 and electrically connected to the third body part 3a through a via structure 551.
- the third body part 3a includes There are two strip-shaped electrode areas extending along the length direction, and the third bridge part 3b is curved.
- the first body part 1a, the second body part 2a, and the third body part 3a do not overlap with the first waveguide arm 310 and the second waveguide arm 320, and the first bridge part 1b , the second bridge part 2b overlap with the first waveguide arm 310 and the second waveguide arm 320 , and the third bridge part 3b does not overlap with the first waveguide arm 310 and the second waveguide arm 320 .
- the first waveguide arm 310 and the second waveguide arm 320 are ahead of the turning of the first ground electrode 410 , the first signal electrode 430 and the second ground electrode 420 ,
- the first waveguide arm 310 and the second waveguide arm 320 are first designed to turn according to their respective curvature radii, while the first ground electrode 410, the first signal electrode 430 and the second ground electrode 420 extend along the length direction. Turn after a while.
- a part of the first signal electrode 430 is located on the electrode layer 540, and a part is located on the bridge layer 560, and the part of the first signal electrode 430 located on the bridge layer 560 and the part of the first signal electrode 430 located on the electrode layer 540 Some of the parts are electrically connected, for example, through the via structure 551 .
- the first ground electrode 410 is entirely located on the electrode layer 540 .
- a part of the second ground electrode 420 is located in the electrode layer 540, a part is located in the bridge layer 560, and the part of the second ground electrode 420 located in the bridge layer 560 is electrically connected with the part of the second ground electrode 420 located in the electrode layer 540, for example They are electrically connected through the via structure 551 .
- the part of the first signal electrode 430 located on the bridge layer 560 and the part of the second ground electrode 420 located on the bridge layer 560 are connected to the first waveguide arm 310 and the second waveguide arm 320. There is overlap, and the first ground electrode 410 does not overlap with the first waveguide arm 310 and the second waveguide arm 320 .
- the first signal electrode 430 includes a first body part 1a located on the electrode layer 540 and a first bridge part 1b located on the bridge layer 560 and electrically connected to the first body part 1a through a via structure 551.
- the first body Part 1a includes two strip-shaped electrode areas extending along the length direction, and a curved strip-shaped electrode area
- the first bridge part 1b includes two strip-shaped electric bridges extending along the length direction, and the two strip-shaped electrode areas
- the bridge electrically connects the first body part 1 a through the via structure 551 .
- the first ground electrode 410 is entirely located on the electrode layer 540 .
- the structure of the second ground electrode 420 is similar to that of the first signal electrode 430, including the third body part 3a located on the electrode layer 540 and the third electrical electrode located on the bridge layer 560 and electrically connected to the third body part 3a through the via structure 551.
- Bridge part 3b, the third body part 3a includes two strip-shaped electrode areas extending along the length direction, and a curved strip-shaped electrode area, the third bridge part 3b includes two strip-shaped electrode areas extending along the length direction Bridge, the two strip bridges are electrically connected to the third body part 3 a through the via structure 551 .
- the first body part 1a and the third body part 3a do not overlap with the first waveguide arm 310 and the second waveguide arm 320
- the first bridge part 1b and the third bridge part 3b overlaps with the first waveguide arm 310 and the second waveguide arm 320
- the first ground electrode 410 does not overlap with the first waveguide arm 310 and the second waveguide arm 320 .
- the structure of the first signal electrode and/or the second ground electrode may also be designed in other forms.
- its first body part includes two strip-shaped electrode regions extending along the length direction but does not include a curved strip-shaped electrode region, and the first bridge part is curved as a whole and includes two sections In the part extending along the length, the two strip-shaped electrode regions are electrically connected through a curved first electric bridge part.
- the structural difference is that the first ground electrode also adopts a bridge structure design.
- the design of the first ground electrode is similar to that of the above-mentioned first signal electrode and the second ground electrode.
- N 3, the first waveguide arm 310 and the second waveguide arm 320 are synchronized with the turns of the first ground electrode 410 , the first signal electrode 430 and the second ground electrode 420 .
- another main structural difference is that, in the direction perpendicular to the substrate 510 , the first signal electrode 430 , the second Both the first ground electrode 410 and the second ground electrode 420 overlap with the first waveguide arm 310 and the second waveguide arm 320 .
- first ground electrode 410 and the second ground electrode 420 differ greatly in different turning regions 102, in the direction perpendicular to the substrate 510, the first ground electrode 410 and the second ground electrode 420 are not Each turning area 102 overlaps with the first waveguide arm 310 and the second waveguide arm 320 . For example, as shown in FIG.
- the first ground electrode 410 overlaps the first waveguide arm 310 and the second waveguide arm 320, and the second ground electrode 410
- the electrode 420 does not overlap with the first waveguide arm 310 and the second waveguide arm 320; in the second turning area 102, the second ground electrode 420 overlaps with the first waveguide arm 310 and the second waveguide arm 320, while the first ground The electrode 410 does not overlap with the first waveguide arm 310 and the second waveguide arm 320 .
- a part of the first signal electrode 430 is located on the electrode layer 540 (such as the first main body part 1a in the figure), and a part is located on the bridge layer 560 (such as the first bridge part 1b in the figure), and the first signal electrode
- the part of 430 located on the bridge layer 560 is electrically connected to the part of the first signal electrode 430 located on the electrode layer 540 , for example, through the via structure 551 .
- a part of the first ground electrode 410 is located at the electrode layer 540 (as shown in the second body part 2a), a part is located at the bridge layer 560 (as shown in the second bridge part 2b), and the first ground electrode 410 is located at the bridge A portion of the layer 560 is electrically connected to a portion of the first ground electrode 410 located on the electrode layer 540 , for example, through the via structure 551 .
- a part of the second ground electrode 420 is located at the electrode layer 540 (as shown in the third body part 3a), a part is located at the bridge layer 560 (as shown in the third bridge part 3b), and the second ground electrode 420 is located at the bridge A portion of the layer 560 is electrically connected to a portion of the second ground electrode 420 located on the electrode layer 540 , for example, through the via structure 551 .
- the part of the first signal electrode 430 located at the bridge layer 560, the part of the first ground electrode 410 located at the bridge layer 560, the part of the second ground electrode 420 located at the bridge layer 560 Parts overlap with the first waveguide arm 310 and the second waveguide arm 320, but the part of the first ground electrode 410 located on the bridge layer 560 and the part of the second ground electrode 420 located on the bridge layer 560 are not in each
- Each turning area 102 overlaps with the first waveguide arm 310 and the second waveguide arm 320 .
- the electrical connection between the electrode layer 540 and the bridge layer 560 is not limited to the via structure 551 through the insulating material layer 550 .
- the insulating material layer may also include a plurality of block units disposed at the junction of the electrode layer and the bridge layer, and the bridge layer extends downward along the sidewall of the block unit to Electrically connected to the electrode layer.
- the folded Mach-Zehnder modulator further includes: a phase compensation modulation module disposed between the radio frequency electrode and the light splitting element, or between the radio frequency electrode and the light combining element.
- the phase compensation modulation module is used to modulate the first waveguide arm and the second waveguide arm, thereby compensating the inherent phase difference of the two waveguide arms and improving the accuracy of the modulation output of the Mach-Zehnder modulator.
- phase compensation modulation module is not limited, for example, it may be an electro-optic phase compensation modulation module based on the electro-optic effect, or a thermo-optic phase compensation modulation module based on the thermo-optic effect, and so on.
- the phase compensation modulation module is an electro-optic phase compensation modulation module arranged between the radio frequency electrode and the light-combining element 220, including the third ground electrode 610, the third ground electrode 610, and the Two signal electrodes 630 and a fourth ground electrode 620, wherein the third ground electrode 610 and the second signal electrode 630 are configured to apply a bias voltage to the first waveguide arm 310, and the fourth ground electrode 620 and the second signal electrode 630 are configured to A bias voltage is applied to the second waveguide arm 320 .
- the third ground electrode 610 , the second signal electrode 630 and the fourth ground electrode 620 can be fabricated synchronously during the fabrication process of the radio frequency electrodes, for example, located on the aforementioned electrode layer 540 .
- the phase compensation modulation module may also not be selected to be arranged as required.
- the folded Mach-Zehnder modulator provided by the embodiments of the present disclosure can realize the miniaturization design of the device on the premise of satisfying the performance requirements of the device, so that it can be more easily integrated into a hardware system.
- first”, “second”, “third”, etc. are used for descriptive purposes only, and should not be interpreted as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first”, “second” and “third” may explicitly or implicitly include one or more of these features.
- “plurality” means two or more, unless otherwise specifically defined.
- a first feature being “on” or “under” a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them.
- the first feature being “above”, “above” and “above” the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature.
- "Below”, “beneath” and “under” the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or simply means that the first feature has a lower level than the second feature.
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Abstract
Description
相关申请的交叉引用Cross References to Related Applications
本申请要求2021年7月16日提交的、申请号为202110804468.6、申请名称为“折叠型马赫曾德尔调制器”的发明专利申请的优先权,本申请所要求优先权的公开通过引用全文并入本文。This application claims the priority of the invention patent application filed on July 16, 2021 with the application number 202110804468.6 and the application name "Folded Mach-Zehnder Modulator". The disclosure of the claimed priority of this application is incorporated by reference in its entirety This article.
本公开涉及光通信技术领域,特别是涉及一种折叠型马赫曾德尔(Mach-Zehnder)调制器。The present disclosure relates to the technical field of optical communication, in particular to a folded Mach-Zehnder modulator.
近年来,随着物联网、无人驾驶、远程医疗、远程教育等新兴网络应用业务的飞速发展,对于高速大容量通信技术提出了更高的要求。光通信因其带宽大、可靠性高、成本低、抗干扰能力强等特点,在高速、大容量通信方向取得了飞速的发展。如何将高速电信号加载到光载波上是一项核心研究内容。In recent years, with the rapid development of emerging network applications such as the Internet of Things, unmanned driving, telemedicine, and distance education, higher requirements have been put forward for high-speed and large-capacity communication technologies. Optical communication has achieved rapid development in the direction of high-speed and large-capacity communication due to its characteristics of large bandwidth, high reliability, low cost, and strong anti-interference ability. How to load high-speed electrical signals onto optical carriers is a core research content.
电光调制器是基于电光材料的电光效应制成的一种调制器。电光效应是指,当对例如铌酸锂晶体、砷化稼晶体或钽酸锂晶体等电光材料施加电压时,电光材料的折射率会发生变化,进而引起通过该电光材料的光波的特性发生变化。利用电光效应,可以实现对光信号相位、幅度、强度以及偏振状态等参数的调制。The electro-optic modulator is a modulator based on the electro-optic effect of electro-optic materials. The electro-optic effect means that when a voltage is applied to an electro-optic material such as lithium niobate crystal, gallium arsenide crystal or lithium tantalate crystal, the refractive index of the electro-optic material will change, which in turn causes the characteristics of the light wave passing through the electro-optic material to change. . Using the electro-optic effect, the modulation of optical signal parameters such as phase, amplitude, intensity, and polarization state can be realized.
马赫曾德尔调制器是电光调制器的一种,其是将输入光信号等分成两个分支光信号,使之分别进入两个波导臂,这两个波导臂采用电光材料,其折射率随外加调制电压的变化而变化。波导臂的折射率变化会引起分支光信号的相位变化,因此,两个分支光信号汇合后输出的是一个强度随调制电压变化的干涉信号。简而言之,马赫曾德尔调制器通过控制施加在两个波导臂上的调制电压,可以实现不同边带的调制。马赫曾德尔调制器作为将电信号转换成光信号的器件,是光互连、光计算、光通信系统中常见的核心器件之一。The Mach-Zehnder modulator is a kind of electro-optic modulator, which divides the input optical signal into two branch optical signals, so that they enter two waveguide arms respectively. The two waveguide arms are made of electro-optic materials, and their refractive index varies with varies with modulation voltage. The change of the refractive index of the waveguide arm will cause the phase change of the branch optical signal. Therefore, the output of the two branch optical signals is an interference signal whose intensity varies with the modulation voltage. In short, the Mach-Zehnder modulator can achieve modulation of different sidebands by controlling the modulation voltage applied to the two waveguide arms. Mach-Zehnder modulator, as a device that converts electrical signals into optical signals, is one of the common core devices in optical interconnection, optical computing, and optical communication systems.
随着人们对于高速、大容量通信技术的需求日益迫切,对于马赫曾德尔调制器的器件性能和器件尺寸均提出了更高的要求。With the increasingly urgent demand for high-speed and large-capacity communication technology, higher requirements are put forward for the device performance and device size of the Mach-Zehnder modulator.
发明内容Contents of the invention
本公开实施例提供一种折叠型马赫曾德尔调制器,包括N个沿长度方向延伸的射频调制区和N-1个转弯区,N≥2,折叠型马赫曾德尔调制器包括:分光元件,包括第一输入端、第一输出端和 第二输出端;合光元件,包括第二输入端、第三输入端和第三输出端;第一波导臂和第二波导臂,材料为电光材料且整体呈折叠状,第一波导臂和第二波导臂在每个转弯区一体交叉,第一波导臂连接第一输出端和第二输入端,第二波导臂连接第二输出端和第三输入端;及,射频电极,包括整体呈折叠状且无交叉依次排列的第一地电极、第一信号电极和第二地电极,在每个射频调制区,第一地电极和第一信号电极配置为向第一波导臂施加射频电压,第二地电极和第一信号电极配置为向第二波导臂施加射频电压。An embodiment of the present disclosure provides a folded Mach-Zehnder modulator, including N radio frequency modulation areas extending along the length direction and N-1 turning areas, N≥2, the folded Mach-Zehnder modulator includes: a light splitting element, It includes a first input end, a first output end and a second output end; an optical combination element includes a second input end, a third input end and a third output end; the first waveguide arm and the second waveguide arm are made of electro-optic material And the overall shape is folded, the first waveguide arm and the second waveguide arm intersect integrally in each turning area, the first waveguide arm connects the first output end and the second input end, the second waveguide arm connects the second output end and the third The input terminal; and, the radio frequency electrode, including the first ground electrode, the first signal electrode and the second ground electrode which are folded and arranged in sequence without crossing, and in each radio frequency modulation area, the first ground electrode and the first signal electrode The second ground electrode and the first signal electrode are configured to apply a radio frequency voltage to the second waveguide arm.
在一些实施例中,第一波导臂和第二波导臂在每个转弯区一体垂直交叉。In some embodiments, the first waveguide arm and the second waveguide arm intersect vertically in one piece at each turning region.
在一些实施例中,第一地电极、第一信号电极和第二地电极在转弯区呈同心圆弧状弯曲。In some embodiments, the first ground electrode, the first signal electrode and the second ground electrode are bent in a concentric arc shape in the turning area.
在一些实施例中,第一波导臂和第二波导臂与第一地电极、第一信号电极和第二地电极的转弯同步;或者,第一波导臂和第二波导臂相比第一地电极、第一信号电极和第二地电极的转弯滞后;或者,第一波导臂和第二波导臂相比第一地电极、第一信号电极和第二地电极的转弯超前。In some embodiments, the first waveguide arm and the second waveguide arm are synchronized with the turns of the first ground electrode, the first signal electrode, and the second ground electrode; or, the first waveguide arm and the second waveguide arm are compared to the first ground electrode The turns of the electrode, the first signal electrode and the second ground electrode lag; or, the turns of the first waveguide arm and the second waveguide arm lead compared to the turns of the first ground electrode, the first signal electrode and the second ground electrode.
在一些实施例中,折叠型马赫曾德尔调制器包括依次设置的衬底、隔离层、波导层、电极层、绝缘材料层和电桥层,其中,第一波导臂和第二波导臂位于波导层;第一信号电极的一部分位于电极层,一部分位于电桥层,且第一信号电极的位于电桥层的部分与第一信号电极的位于电极层的部分电连接,在垂直于衬底的方向上,第一信号电极的位于电桥层的部分与第一波导臂、第二波导臂有交叠。In some embodiments, the folded Mach-Zehnder modulator includes a substrate, an isolation layer, a waveguide layer, an electrode layer, an insulating material layer, and a bridge layer arranged in sequence, wherein the first waveguide arm and the second waveguide arm are located between the waveguide layer; a part of the first signal electrode is located in the electrode layer, and a part is located in the bridge layer, and the part of the first signal electrode located in the bridge layer is electrically connected with the part of the first signal electrode located in the electrode layer, and is perpendicular to the substrate direction, the part of the first signal electrode located on the bridge layer overlaps with the first waveguide arm and the second waveguide arm.
在一些实施例中,第一地电极的一部分位于电极层,一部分位于电桥层,且第一地电极的位于电桥层的部分与第一地电极的位于电极层的部分电连接,在垂直于衬底的方向上,第一地电极的位于电桥层的部分与第一波导臂、第二波导臂有交叠。In some embodiments, a part of the first ground electrode is located on the electrode layer, and a part is located on the bridge layer, and the part of the first ground electrode located on the bridge layer is electrically connected to the part of the first ground electrode located on the electrode layer. In the direction of the substrate, the part of the first ground electrode located on the bridge layer overlaps with the first waveguide arm and the second waveguide arm.
在一些实施例中,第二地电极的一部分位于电极层,一部分位于电桥层,且第二地电极的位于电桥层的部分与第二地电极的位于电极层的部分电连接,在垂直于衬底的方向上,第二地电极的位于电桥层的部分与第一波导臂、第二波导臂有交叠。In some embodiments, a part of the second ground electrode is located on the electrode layer, and a part is located on the bridge layer, and the part of the second ground electrode located on the bridge layer is electrically connected to the part of the second ground electrode located on the electrode layer, vertically In the direction of the substrate, the part of the second ground electrode located on the bridge layer overlaps with the first waveguide arm and the second waveguide arm.
在一些实施例中,第一地电极位于电极层,并且在垂直于衬底的方向上,第一地电极与第一波导臂、第二波导臂无交叠。In some embodiments, the first ground electrode is located on the electrode layer, and in a direction perpendicular to the substrate, the first ground electrode does not overlap with the first waveguide arm and the second waveguide arm.
在一些实施例中,第一地电极的一部分位于电极层,一部分位于电桥层,且第一地电极的位于电桥层的部分与第一地电极的位于电极层的部分电连接,在垂直于衬底的方向上,第一地电极的位于电桥层的部分与第一波导臂、第二波导臂无交叠。In some embodiments, a part of the first ground electrode is located on the electrode layer, and a part is located on the bridge layer, and the part of the first ground electrode located on the bridge layer is electrically connected to the part of the first ground electrode located on the electrode layer. In the direction of the substrate, the part of the first ground electrode located on the bridge layer does not overlap with the first waveguide arm and the second waveguide arm.
在一些实施例中,第二地电极位于电极层,并且在垂直于衬底的方向上,第二地电极与第一波导臂、第二波导臂无交叠。In some embodiments, the second ground electrode is located on the electrode layer, and in a direction perpendicular to the substrate, the second ground electrode does not overlap with the first waveguide arm and the second waveguide arm.
在一些实施例中,第二地电极的一部分位于电极层,一部分位于电桥层,且第二地电极的位于电桥层的部分与第二地电极的位于电极层的部分电连接,在垂直于衬底的方向上,第二地电极的位于电桥层的部分与第一波导臂、第二波导臂无交叠。In some embodiments, a part of the second ground electrode is located on the electrode layer, and a part is located on the bridge layer, and the part of the second ground electrode located on the bridge layer is electrically connected to the part of the second ground electrode located on the electrode layer, vertically In the direction of the substrate, the part of the second ground electrode located on the bridge layer does not overlap with the first waveguide arm and the second waveguide arm.
在一些实施例中,波导层为脊波导层,包括平板层和位于平板层之上的脊凸层,第一波导臂和第二波导臂位于脊凸层,电极层形成在平板层的远离衬底的表面。In some embodiments, the waveguide layer is a ridge waveguide layer, including a slab layer and a ridge layer located on the slab layer, the first waveguide arm and the second waveguide arm are located on the ridge layer, and the electrode layer is formed on the slab layer away from the substrate. bottom surface.
在一些实施例中,波导层为脊波导层,包括平板层和位于平板层之上的脊凸层,第一波导臂和第二波导臂位于脊凸层,平板层具有刻槽,电极层嵌入刻槽内。In some embodiments, the waveguide layer is a ridge waveguide layer, including a slab layer and a ridge layer on the slab layer, the first waveguide arm and the second waveguide arm are located on the ridge layer, the slab layer has grooves, and the electrode layer is embedded In the groove.
在一些实施例中,波导层为包括第一波导臂和第二波导臂的脊凸层,电极层形成在隔离层的远离衬底的表面。In some embodiments, the waveguide layer is a ridge layer including a first waveguide arm and a second waveguide arm, and the electrode layer is formed on the surface of the isolation layer away from the substrate.
在一些实施例中,折叠型马赫曾德尔调制器还包括:设于射频电极与分光元件之间、或者设于射频电极与合光元件之间的相位补偿调制模块。In some embodiments, the folded Mach-Zehnder modulator further includes: a phase compensation modulation module disposed between the radio frequency electrode and the light splitting element, or between the radio frequency electrode and the light combining element.
应当理解,本部分所描述的内容并非旨在标识本公开的实施例的关键或重要特征,也不用于限制本公开的范围。本公开的其它特征将通过以下的说明书而变得容易理解。It should be understood that what is described in this section is not intended to identify key or important features of the embodiments of the present disclosure, nor is it intended to limit the scope of the present disclosure. Other features of the present disclosure will be readily understood through the following description.
在下面结合附图对于示例性实施例的描述中,本公开的更多细节、特征和优点被公开,在附图中:Further details, features and advantages of the present disclosure are disclosed in the following description of exemplary embodiments with reference to the accompanying drawings in which:
图1是传统型马赫曾德尔调制器的简化结构俯视图;Fig. 1 is a simplified structural top view of a traditional Mach-Zehnder modulator;
图2是根据本公开一些示例性实施例的折叠型马赫曾德尔调制器的结构俯视图及局部结构剖视图;2 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to some exemplary embodiments of the present disclosure;
图3是根据本公开另一些示例性实施例的折叠型马赫曾德尔调制器的结构俯视图及局部结构剖视图;Fig. 3 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to other exemplary embodiments of the present disclosure;
图4是根据本公开又一些示例性实施例的折叠型马赫曾德尔调制器的结构俯视图及局部结构剖视图;Fig. 4 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to some other exemplary embodiments of the present disclosure;
图5是根据本公开再一些示例性实施例的折叠型马赫曾德尔调制器的结构俯视图及局部结构剖视图;以及5 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to still some exemplary embodiments of the present disclosure; and
图6是根据本公开再一些示例性实施例的折叠型马赫曾德尔调制器的结构俯视图及局部结构剖视图。Fig. 6 is a structural top view and a partial structural cross-sectional view of a folded Mach-Zehnder modulator according to some other exemplary embodiments of the present disclosure.
在下文中,仅简单地描述了某些示例性实施例。正如本领域技术人员可认识到的那样,在不脱离本公开的精神或范围的情况下,可通过各种不同方式修改所描述的实施例。因此,附图和描述被认为本质上是示例性的而非限制性的。In the following, only some exemplary embodiments are briefly described. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present disclosure. Accordingly, the drawings and descriptions are to be regarded as illustrative in nature and not restrictive.
如图1所示,为一种传统型马赫曾德尔调制器的结构示意图。在理想状态下,马赫曾德尔调制器001的两个波导臂02绝对相同。马赫曾德尔调制器001不工作时,两个波导臂02均不发生电光效应,输入光经过分光元件01后被等分为两个分支光信号,两个分支光信号在各自经过一个波导臂02后相位仍然相同,因此,会从合光元件05输出两个分支光信号的相干加强信号。马赫曾德尔调制器001工作时,调制电极04(例如包括信号电极040、第一地电极041和第二地电极042)对两个波导臂02施加调制电压,两个分支光信号在各自经过一个波导臂02后相位可以相差Π的奇数倍或偶数倍,当相位相差Π的偶数倍时,合光元件05输出两个分支光信号的相干加强信号,当相位相差Π的奇数倍时,合光元件05输出两个分支光信号的相干抵消信号。As shown in FIG. 1 , it is a schematic structural diagram of a traditional Mach-Zehnder modulator. Ideally, the two
从图中可以看出,这种传统型马赫曾德尔调制器的结构特点是细长型,其长度通常在毫米或者厘米量级,而其宽度通常在几百微米量级,此外,为了尽量降低驱动电压,也会设计增加两个波导臂的长度。虽然马赫曾德尔调制器的宽度尺寸较小,但其整体尺寸仍主要由长度尺寸决定,因此,如何在不影响器件性能的前提下,实现器件的小型化设计,是本领域技术人员亟待解决的技术问题。It can be seen from the figure that the structure of this traditional Mach-Zehnder modulator is slender, its length is usually on the order of millimeters or centimeters, and its width is usually on the order of hundreds of microns. In addition, in order to minimize the The driving voltage will also be designed to increase the length of the two waveguide arms. Although the width of the Mach-Zehnder modulator is small, its overall size is still mainly determined by the length. Therefore, how to realize the miniaturization design of the device without affecting the performance of the device is an urgent problem for those skilled in the art. technical problem.
本公开实施例提供了一种折叠型马赫曾德尔调制器,其可以在满足器件性能需求的前提下,实现器件的小型化设计。The embodiment of the present disclosure provides a folded Mach-Zehnder modulator, which can realize the miniaturization design of the device on the premise of meeting the performance requirements of the device.
如图2所示,本公开一些实施例提供了一种折叠型马赫曾德尔调制器1,包括N个沿长度方向延伸的射频调制区101和N-1个转弯区102,其中,N≥2(该实施例中,以N=2示意)。折叠型马赫曾德尔调制器1的主要结构包括分光元件210、合光元件220、第一波导臂310、第二波导臂320以及射频电极,其中,射频电极包括第一地电极410、第一信号电极430和第二地电极420。As shown in Figure 2, some embodiments of the present disclosure provide a folded Mach-
分光元件210包括第一输入端211、第一输出端212和第二输出端213,合光元件220包括第二输入端221、第三输入端222和第三输出端223。第一波导臂310连接第一输出端212和第二输入端221,第二波导臂320连接第二输出端213和第三输入端223。第一波导臂310和第二波导臂320的材料为电光材料且整体呈折叠状,第一波导臂310和第二波导臂320在每个转弯区102一体交叉。The
在本公开实施例中,分光元件210的具体结构形式不限,其至少包括一个输入端和两个输出端,例如可以为一进二出的分光元件。合光元件220的具体结构形式不限,其至少包括两个输入端和一个输出端,例如可以为二进一出的合光元件或者二进三出的合光元件等等。In the embodiment of the present disclosure, the specific structural form of the
第一地电极410、第一信号电极430和第二地电极420整体呈折叠状且无交叉依次排列。如图2所示,射频电极(即第一地电极410、第一信号电极430和第二地电极420整体)与第一波导臂310和第二波导臂320在长度方向上至少部分重叠,每个重叠的区域即为一个射频调制区101。在射频调制区101,第一地电极410和第一信号电极430配置为向第一波导臂310施加射频电压,第二地电极420和第一信号电极430配置为向第二波导臂320施加射频电压。The
在本公开实施例中,N为自然数,并且N≥2,可以理解的,当射频调制区101的数量为偶数时(例如图2所示,N=2时),分光元件210和合光元件220设置在该折叠型马赫曾德尔调制器1的同一侧,当射频调制区101的数量为奇数时(例如图6所示,N=3时),分光元件210和合光元件220设置在该折叠型马赫曾德尔调制器1的相对侧。In the embodiment of the present disclosure, N is a natural number, and N≥2. It can be understood that when the number of radio
本公开实施例提供的折叠型马赫曾德尔调制器1,由于采用了折叠设计,相比传统型马赫曾德尔调制器,可以大大缩减长度方向的尺寸。为了获得更佳的器件性能,可以根据需求设计增加波导臂的长度,而对器件的整体长度影响较小。The folded Mach-
第一波导臂310和第二波导臂320均采用电光材料,例如铌酸锂、钽酸锂或者磷酸氧钛钾等等。由于电光材料的折射率变化和电场方向有关,如果不将第一波导臂310和第二波导臂320在转弯区102交叉,那么,在转弯区102之后的下一个射频调制区101,两个波导臂将处于相反的电场中,从而使所产生的相位差相互抵消。因此,第一波导臂310和第二波导臂320在转弯区102需要设计为交叉结构,以保证两个波导臂在各个射频调制区101所处的电场方向不变。在图2中,第一信号电极430与第一地电极410所形成的电场、第一信号电极430与第二地电极420所形成的电场,分别如图中的虚线箭头所示,可以看出,每个波导臂在各个射频调制区101所处的电场方向是相同的。Both the
在本公开实施例中,第一波导臂310和第二波导臂320采用相同的材料并且在每个转弯区102一体交叉,这样可以降低光在第一波导臂310和第二波导臂320中各自的传输损耗以及减少相互之间的串扰,有利于提升器件的性能。第一波导臂310和第二波导臂320的一体交叉结构可以通过波导层的刻蚀工艺形成。In the embodiment of the present disclosure, the
如图2所示,在一些实施例中,第一波导臂310和第二波导臂320在每个转弯区102各自呈圆弧形并且交叉。如图3所示,第一波导臂310和第二波导臂320在每个转弯区102一体垂直交叉,这样,在交叉处,任意相邻波导分支之间的夹角为90度,从而将波导分支之间的传输干扰降至最低。虽然两个波导臂在转弯区102交叉,但光在两个波导臂中的传播仍然是大致按照波导臂的延伸方向,受交叉结构的影响微小,传输损耗较小。As shown in FIG. 2 , in some embodiments, the
本公开对第一波导臂310和第二波导臂320的交叉形状不局限上述实施例,例如,在一些实施例中,第一波导臂和第二波导臂在每个转弯区还可以呈折线形交叉。The present disclosure does not limit the cross shape of the
如图2和图3所示,在该实施例中,第一地电极410、第一信号电极430和第二地电极420在转弯区102呈同心圆弧状弯曲,一方面便于加工制作,另一方面可以尽量减少电传输的损耗。当然,本公开对此不做具体限定,第一地电极、第一信号电极和第二地电极在转弯区也可以设计为其它形状。As shown in Figure 2 and Figure 3, in this embodiment, the
本公开实施例的折叠型马赫曾德尔调制器1,沿光从分光元件210到合光元件220的传输方向(整体也呈折叠形状),第一波导臂310和第二波导臂320相比第一地电极410、第一信号电极430和第二地电极420的转弯设置可以是同步、滞后或者超前。In the folded Mach-
射频电极根据射频电路的电信号向电光材料的第一波导臂310和第二波导臂320施加射频电压,从而实现对第一波导臂310和第二波导臂320中传输光信号的相位调制。然而,由于光场传输速率和电场传输速率的差异,可能导致两者在射频调制区101的传输速率失配。假设在射频调制区,V
光>V
电,那么,根据L/V
光+ΔL1/V
光=L/V
电,可以得到,ΔL1=(L/V
电-L/V
光)*V
光;假设在射频调制区,V
电>V
光,那么,根据L/V
电+ΔL2/V
电=L/V
光,可以得到ΔL2=(L/V
光-L/V
电)*V
电。因此,可以通过设计ΔL1或ΔL2来使光场和电场的传输速率相匹配,其中,V
电为电场传输速率,V
光为光场传输速率,L为射频调制区沿长度方向的尺寸,ΔL1为两个波导臂相比射频电极转弯滞后时在转弯区沿长度方向的尺寸,ΔL2为射频电极相比两个波导臂转弯滞后时在转弯区沿长度方向的尺寸。在本公开实施例中,可以通过第一波导臂310和第二波导臂320相比第一地电极410、第一信号电极430和第二地电极420的转弯先后设计来补偿上述传输速率的差异,使光场和电场在射频调制区101的传输相匹配,进而提高折叠型马赫曾德尔调制器1的器件性能。
The radio frequency electrode applies radio frequency voltage to the
如图2所示,本公开一些实施例的折叠型马赫曾德尔调制器1的层结构包括:依次设置的衬底510、隔离层520、波导层530、电极层540、绝缘材料层550和电桥层560。波导层530可以为图中所示的脊波导层,包括平板层和位于平板层之上的脊凸层531,平 板层和脊凸层531为经过刻蚀形成的一体结构,电极层540的图案形成在平板层的远离衬底510的表面。As shown in FIG. 2 , the layer structure of the folded Mach-
在本公开的另一些实施例中,波导层为脊波导层,包括平板层和位于平板层之上的脊凸层,平板层和脊凸层为经过刻蚀形成的一体结构,第一波导臂和第二波导臂位于脊凸层,平板层具有图案化的刻槽,电极层嵌入刻槽内。此外,波导层也可以不包括平板层而只包括脊凸层,脊凸层包括第一波导臂和第二波导臂,这样,电极层可以形成在隔离层的远离衬底的表面。In other embodiments of the present disclosure, the waveguide layer is a ridge waveguide layer, including a slab layer and a ridge layer located on the slab layer, the slab layer and the ridge layer are an integral structure formed by etching, and the first waveguide arm and the second waveguide arm are located on the ridge layer, the plate layer has patterned grooves, and the electrode layer is embedded in the grooves. In addition, the waveguide layer may not include a flat layer but only include a ridge layer, and the ridge layer includes a first waveguide arm and a second waveguide arm, so that the electrode layer can be formed on the surface of the isolation layer away from the substrate.
第一波导臂310和第二波导臂320位于脊凸层531,具体为脊凸层531的一些脊凸图案。在一些实施例中,分光元件210的用于分光的多模干涉波导,以及合光元件220的用于合光的多模干涉波导也位于波导层530,具体可以为脊凸层531的一些脊凸图案。The
根据折叠型马赫曾德尔调制器1所包含射频调制区101的数量,以及第一波导臂310和第二波导臂320相比第一地电极410、第一信号电极430和第二地电极420的不同转弯位置设计,折叠型马赫曾德尔调制器1的具体结构设计也相差别,但均需要满足:第一波导臂310和第二波导臂320在转弯区102的交叉,以及避免第一地电极410、第一信号电极430和第二地电极420与第一波导臂310和第二波导臂320的实体交叉。According to the number of radio
以下对本公开采用不同设计的马赫曾德尔调制器做进一步详细说明。The Mach-Zehnder modulators with different designs in the present disclosure will be further described in detail below.
如图2所示,在一些实施例中,第一波导臂310和第二波导臂320与第一地电极410、第一信号电极430和第二地电极420的转弯同步,在转弯区102,第一波导臂310、第二波导臂320、第一地电极410、第一信号电极430和第二地电极420按照各自的曲率半径呈弯曲状并且同时开始转弯、同时结束转弯。As shown in FIG. 2 , in some embodiments, the
在该实施例中,第一信号电极430的一部分位于电极层540,一部分位于电桥层560,且位于电桥层560的部分与位于电极层540的部分电连接,例如,通过过孔结构551电连接。在垂直于衬底510的方向上,第一信号电极430的位于电桥层560的部分与第一波导臂310、第二波导臂320有交叠。其中,过孔结构为绝缘材料层550上所形成的多个通孔。In this embodiment, a part of the
具体的,第一信号电极430包括位于电极层540的第一主体部分1a和位于电桥层560且通过过孔结构551与第一主体部分1a电连接的第一电桥部分1b。该实施例中,第一主体部分1a包括两个沿长度方向延伸的条形电极区,第一电桥部分1b呈弯曲状。第一地电极410整体位于电极层540,第二地电极420整体位于电极层540。在垂直于衬底510的方向上,第一主体部分1a与第一波导臂310、第二波导臂320无交叠,第一电桥 部分1b与第一波导臂310、第二波导臂320有交叠,第一地电极410、第二地电极420均与第一波导臂310、第二波导臂320无交叠。Specifically, the
虽然在垂直于衬底510的方向上,第一电桥部分1b与第一波导臂310、第二波导臂320有交叠,但由于第一电桥部分1b与第一波导臂310、第二波导臂320分别在不同的结构层,因此,实体上并无交叉。该实施例结构设计,对于N=2,或者N≥3的情形均适用。Although the
在本公开的另一些实施例中,与图2所示实施例相比,其结构上的区别是,第一地电极、第二地电极也采用了电桥结构设计。例如,第一地电极包括位于电极层的第二主体部分和位于电桥层且与第二主体部分电连接(例如通过过孔结构电连接)的第二电桥部分,第二主体部分也包括两个沿长度方向延伸的条形电极区,第二电桥部分呈弯曲状。类似的,第二地电极包括位于电极层的第三主体部分和位于电桥层且与第三主体部分电连接(例如通过过孔结构电连接)的第三电桥部分,第三主体部分也包括两个沿长度方向延伸的条形电极区,第三电桥部分呈弯曲状。这样,可以改善第一地电极、第一信号电极、第二地电极可能存在的阻抗不匹配,有利于进一步提升器件的性能。In other embodiments of the present disclosure, compared with the embodiment shown in FIG. 2 , the difference in structure is that the first ground electrode and the second ground electrode also adopt a bridge structure design. For example, the first ground electrode includes a second body part located on the electrode layer and a second bridge part located on the bridge layer and electrically connected to the second body part (for example, electrically connected through a via structure), and the second body part also includes There are two strip-shaped electrode areas extending along the length direction, and the second electric bridge part is curved. Similarly, the second ground electrode includes a third body part located on the electrode layer and a third bridge part located on the bridge layer and electrically connected to the third body part (for example, electrically connected through a via structure), and the third body part is also It includes two strip-shaped electrode areas extending along the length direction, and the third electric bridge part is curved. In this way, the impedance mismatch that may exist in the first ground electrode, the first signal electrode, and the second ground electrode can be improved, which is beneficial to further improving the performance of the device.
如图3所示,在一些实施例中,N=2,第一波导臂310和第二波导臂320与第一地电极410、第一信号电极430和第二地电极420的转弯同步。As shown in FIG. 3 , in some embodiments, N=2, the
在该实施例中,第一信号电极430的一部分位于电极层540,一部分位于电桥层560,且第一信号电极430的位于电桥层560的部分与第一信号电极430的位于电极层540的部分电连接,例如通过过孔结构551电连接。第一地电极410的一部分位于电极层540,一部分位于电桥层560,且第一地电极410的位于电桥层560的部分与第一地电极410的位于电极层540的部分电连接,例如通过过孔结构551电连接。在垂直于衬底510的方向上,第一信号电极430的位于电桥层560的部分、第一地电极410的位于电桥层560的部分均与第一波导臂310、第二波导臂320有交叠,第二地电极420与第一波导臂310、第二波导臂320无交叠。In this embodiment, a part of the
具体的,第一信号电极430包括位于电极层540的第一主体部分1a和位于电桥层560且通过过孔结构551与第一主体部分1a电连接的第一电桥部分1b,第一主体部分1a包括两个沿长度方向延伸的条形电极区,第一电桥部分1b呈弯曲状。类似的,第一地电极410包括位于电极层540的第二主体部分2a和位于电桥层560且通过过孔结构551与第二主体部分2a电连接的第二电桥部分2b,第二主体部分2a也包括两个沿长度方向延伸的条形电极区,第二电桥部分2b呈弯曲状。类似的,第二地电极420包括位于电极层 540的第三主体部分3a和位于电桥层560且通过过孔结构551与第三主体部分3a电连接的第三电桥部分3b,第三主体部分3a也包括两个沿长度方向延伸的条形电极区,第三电桥部分3b呈弯曲状。在垂直于衬底510的方向上,第一主体部分1a、第二主体部分2a、第三主体部分3a均与第一波导臂310、第二波导臂320无交叠,第一电桥部分1b、第二电桥部分2b均与第一波导臂310、第二波导臂320有交叠,第三电桥部分3b与第一波导臂310、第二波导臂320无交叠。Specifically, the
在另一些实施例中,由于第二地电极与第一波导臂、第二波导臂无交叠,第二地电极也可以不采用电桥结构设计,而是整体位于电极层。In some other embodiments, since the second ground electrode does not overlap with the first waveguide arm and the second waveguide arm, the second ground electrode may not be designed with a bridge structure, but may be entirely located on the electrode layer.
如图4所示,在一些实施例中,N=2,第一波导臂310和第二波导臂320相比第一地电极410、第一信号电极430和第二地电极420的转弯滞后,在转弯区102,第一地电极410、第一信号电极430和第二地电极420按照各自的曲率半径设计呈弯曲状并且同时开始转弯、同时结束转弯,而第一波导臂310和第二波导臂320则是沿长度方向再延伸一段后再进行转弯。As shown in FIG. 4 , in some embodiments, N=2, the
该实施例在转弯区102的结构与图3所示实施例有相同之处。具体的,第一信号电极430包括位于电极层540的第一主体部分1a和位于电桥层560且通过过孔结构551与第一主体部分1a电连接的第一电桥部分1b,第一主体部分1a包括两个沿长度方向延伸的条形电极区,第一电桥部分1b呈弯曲状。第一地电极410包括位于电极层540的第二主体部分2a和位于电桥层560且通过过孔结构551与第二主体部分2a电连接的第二电桥部分2b,第二主体部分2a包括两个沿长度方向延伸的条形电极区,第二电桥部分2b呈弯曲状。第二地电极420包括位于电极层540的第三主体部分3a和位于电桥层560且通过过孔结构551与第三主体部分3a电连接的第三电桥部分3b,第三主体部分3a包括两个沿长度方向延伸的条形电极区,第三电桥部分3b呈弯曲状。在垂直于衬底510的方向上,第一主体部分1a、第二主体部分2a、第三主体部分3a均与第一波导臂310、第二波导臂320无交叠,第一电桥部分1b、第二电桥部分2b均与第一波导臂310、第二波导臂320有交叠,第三电桥部分3b与第一波导臂310、第二波导臂320无交叠。The structure of this embodiment in the
如图5所示,在一些实施例中,N=2,第一波导臂310和第二波导臂320相比第一地电极410、第一信号电极430和第二地电极420的转弯超前,在转弯区102,第一波导臂310、第二波导臂320首先按照各自的曲率半径设计转弯,而第一地电极410、第一信号电极430和第二地电极420则是沿长度方向再延伸一段后再进行转弯。As shown in FIG. 5 , in some embodiments, N=2, the
在该实施例中,第一信号电极430的一部分位于电极层540,一部分位于电桥层560,且第一信号电极430的位于电桥层560的部分与第一信号电极430的位于电极层540的部分电连接,例如通过过孔结构551电连接。第一地电极410整体位于电极层540。第二地电极420的一部分位于电极层540,一部分位于电桥层560,且第二地电极420的位于电桥层560的部分与第二地电极420的位于电极层540的部分电连接,例如通过过孔结构551电连接。在垂直于衬底510的方向上,第一信号电极430的位于电桥层560的部分、第二地电极420的位于电桥层560的部分均与第一波导臂310、第二波导臂320有交叠,第一地电极410与第一波导臂310、第二波导臂320无交叠。In this embodiment, a part of the
具体的,第一信号电极430包括位于电极层540的第一主体部分1a和位于电桥层560且通过过孔结构551与第一主体部分1a电连接的第一电桥部分1b,第一主体部分1a包括两个沿长度方向延伸的条形电极区,以及一个呈弯曲状的条形电极区,第一电桥部分1b包括两个沿长度方向延伸的条形电桥,两个条形电桥通过过孔结构551将第一主体部分1a电性导通。第一地电极410整体位于电极层540。第二地电极420的结构与第一信号电极430类似,包括位于电极层540的第三主体部分3a和位于电桥层560且通过过孔结构551与第三主体部分3a电连接的第三电桥部分3b,第三主体部分3a包括两个沿长度方向延伸的条形电极区,以及一个呈弯曲状的条形电极区,第三电桥部分3b包括两个沿长度方向延伸的条形电桥,两个条形电桥通过过孔结构551将第三主体部分3a电性导通。在垂直于衬底510的方向上,第一主体部分1a、第三主体部分3a均与第一波导臂310、第二波导臂320无交叠,第一电桥部分1b、第三电桥部分3b均与第一波导臂310、第二波导臂320有交叠,第一地电极410与第一波导臂310、第二波导臂320无交叠。Specifically, the
在本公开的一些其它实施例中,第一信号电极和/或第二地电极的结构也可以设计为其它形式。以第一信号电极为例,其第一主体部分包括两个沿长度方向延伸的条形电极区但不包括呈弯曲状的条形电极区,第一电桥部分整体呈弯曲状并且包括两段沿长度延伸的部分,两个条形电极区之间通过一个呈弯曲状的第一电桥部分电性导通。In some other embodiments of the present disclosure, the structure of the first signal electrode and/or the second ground electrode may also be designed in other forms. Taking the first signal electrode as an example, its first body part includes two strip-shaped electrode regions extending along the length direction but does not include a curved strip-shaped electrode region, and the first bridge part is curved as a whole and includes two sections In the part extending along the length, the two strip-shaped electrode regions are electrically connected through a curved first electric bridge part.
在另一些实施例中,与图5所示实施例相比,其结构上的区别是,第一地电极也采用了电桥结构设计。例如,为改善第一地电极、第一信号电极、第二地电极可能存在的阻抗不匹配,第一地电极也采用了类似于上述第一信号电极、第二地电极的设计。In some other embodiments, compared with the embodiment shown in FIG. 5 , the structural difference is that the first ground electrode also adopts a bridge structure design. For example, in order to improve the impedance mismatch that may exist in the first ground electrode, the first signal electrode, and the second ground electrode, the design of the first ground electrode is similar to that of the above-mentioned first signal electrode and the second ground electrode.
如图6所示,在一些实施例中,N=3,第一波导臂310和第二波导臂320与第一地电极410、第一信号电极430和第二地电极420的转弯同步。与图3所示实施例相比,除射频调制区101和转弯区102的数量不同外,另一个结构上的主要区别在于,在垂直于衬 底510的方向上,第一信号电极430、第一地电极410、第二地电极420均与第一波导臂310和第二波导臂320有交叠。但由于第一地电极410和第二地电极420在不同转弯区102的转弯半径相差较大,因此,在垂直于衬底510的方向上,第一地电极410和第二地电极420并不是在每个转弯区102都与第一波导臂310、第二波导臂320相交叠。例如,如图6所示,在垂直于衬底510的方向上,在第一个转弯区102,第一地电极410与第一波导臂310、第二波导臂320相交叠,而第二地电极420与第一波导臂310、第二波导臂320无交叠;在第二个转弯区102,第二地电极420与第一波导臂310、第二波导臂320相交叠,而第一地电极410与第一波导臂310、第二波导臂320无交叠。As shown in FIG. 6 , in some embodiments, N=3, the
该实施例中,第一信号电极430的一部分位于电极层540(如图中第一主体部分1a),一部分位于电桥层560(如图中第一电桥部分1b),且第一信号电极430的位于电桥层560的部分与第一信号电极430的位于电极层540的部分电连接,例如通过过孔结构551电连接。第一地电极410的一部分位于电极层540(如图中第二主体部分2a),一部分位于电桥层560(如图中第二电桥部分2b),且第一地电极410的位于电桥层560的部分与第一地电极410的位于电极层540的部分电连接,例如通过过孔结构551电连接。第二地电极420的一部分位于电极层540(如图中第三主体部分3a),一部分位于电桥层560(如图中第三电桥部分3b),且第二地电极420的位于电桥层560的部分与第二地电极420的位于电极层540的部分电连接,例如通过过孔结构551电连接。在垂直于衬底510的方向上,第一信号电极430的位于电桥层560的部分、第一地电极410的位于电桥层560的部分、第二地电极420的位于电桥层560的部分均与第一波导臂310、第二波导臂320有交叠,但第一地电极410的位于电桥层560的部分、第二地电极420的位于电桥层560的部分并不是在每个转弯区102都与第一波导臂310、第二波导臂320相交叠。In this embodiment, a part of the
在本公开以上各实施例中,电极层540和电桥层560的电连接实现不限于通过绝缘材料层550的过孔结构551。例如,在本公开的其它实施例中,绝缘材料层也可以包括设置在电极层和电桥层的连接处的多个块状单元,电桥层沿着块状单元的侧壁向下延伸至与电极层电连接。In the above embodiments of the present disclosure, the electrical connection between the
在本公开一些实施例中,折叠型马赫曾德尔调制器还包括:设于射频电极与分光元件之间、或者设于射频电极与合光元件之间的相位补偿调制模块。相位补偿调制模块用来对第一波导臂和第二波导臂进行调制,从而补偿两个波导臂的固有相位差,提高马赫曾德尔调制器的调制输出的准确性。In some embodiments of the present disclosure, the folded Mach-Zehnder modulator further includes: a phase compensation modulation module disposed between the radio frequency electrode and the light splitting element, or between the radio frequency electrode and the light combining element. The phase compensation modulation module is used to modulate the first waveguide arm and the second waveguide arm, thereby compensating the inherent phase difference of the two waveguide arms and improving the accuracy of the modulation output of the Mach-Zehnder modulator.
相位补偿调制模块的具体类型不限,例如可以为基于电光效应的电光型相位补偿调制模块,或者基于热光效应的热光型相位补偿调制模块,等等。The specific type of the phase compensation modulation module is not limited, for example, it may be an electro-optic phase compensation modulation module based on the electro-optic effect, or a thermo-optic phase compensation modulation module based on the thermo-optic effect, and so on.
如图6所示,本公开一些实施例中,相位补偿调制模块为设于射频电极与合光元件220之间的电光型相位补偿调制模块,包括无交叉依次排列的第三地电极610、第二信号电极630和第四地电极620,其中,第三地电极610和第二信号电极630配置为向第一波导臂310施加偏置电压,第四地电极620和第二信号电极630配置为向第二波导臂320施加偏置电压。As shown in FIG. 6 , in some embodiments of the present disclosure, the phase compensation modulation module is an electro-optic phase compensation modulation module arranged between the radio frequency electrode and the light-combining
第三地电极610、第二信号电极630和第四地电极620可以在射频电极的制作过程中同步制作,例如,位于前述的电极层540。The
在一些实施例中,也可以根据需要不选择布置相位补偿调制模块。In some embodiments, the phase compensation modulation module may also not be selected to be arranged as required.
综上,本公开实施例提供的折叠型马赫曾德尔调制器,可以在满足器件性能需求的前提下,实现器件的小型化设计,从而更易集成在硬件系统中。To sum up, the folded Mach-Zehnder modulator provided by the embodiments of the present disclosure can realize the miniaturization design of the device on the premise of satisfying the performance requirements of the device, so that it can be more easily integrated into a hardware system.
应当理解的是,在本说明书中,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系或尺寸为基于附图所示的方位或位置关系或尺寸,使用这些术语仅是为了便于描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,并且因此不能理解为对本公开的保护范围的限制。It should be understood that in this specification the terms "central", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear" , "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise", "Axial", " The orientation or positional relationship or size indicated by "radial direction", "circumferential direction" and so on are based on the orientation or positional relationship or size shown in the drawings, and these terms are used only for the convenience of description, not to indicate or imply the referred device or Elements must have certain orientations, be constructed and operate in certain orientations, and thus should not be construed as limiting the scope of the present disclosure.
此外,术语“第一”、“第二”、“第三”等仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。In addition, the terms "first", "second", "third", etc. are used for descriptive purposes only, and should not be interpreted as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first", "second" and "third" may explicitly or implicitly include one or more of these features. In the description of the present disclosure, "plurality" means two or more, unless otherwise specifically defined.
在本公开中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接,还可以是通信;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本公开中的具体含义。In this disclosure, terms such as "installation", "connection", "connection" and "fixation" should be interpreted in a broad sense, for example, it can be a fixed connection or a detachable connection unless otherwise clearly defined and limited. , or integrated; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection or an indirect connection through an intermediary, it can be the internal communication of two components or the interaction relationship between two components . Those of ordinary skill in the art can understand the specific meanings of the above terms in the present disclosure according to specific situations.
在本公开中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特 征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。In the present disclosure, unless otherwise clearly stated and limited, a first feature being "on" or "under" a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them. Moreover, the first feature being "above", "above" and "above" the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature. "Below", "beneath" and "under" the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or simply means that the first feature has a lower level than the second feature.
本说明书提供了能够用于实现本公开的许多不同的实施方式或例子。应当理解的是,这些不同的实施方式或例子完全是示例性的,并且不用于以任何方式限制本公开的保护范围。本领域技术人员在本公开的说明书的公开内容的基础上,能够想到各种变化或替换,这些都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所附权利要求所限定的保护范围为准。This specification provides many different embodiments or examples that can be used to implement the present disclosure. It should be understood that these different embodiments or examples are purely exemplary and are not intended to limit the protection scope of the present disclosure in any way. Those skilled in the art can conceive of various changes or substitutions on the basis of the disclosure content in the specification of the present disclosure, and these should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be defined by the appended claims.
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| US7426326B2 (en) * | 2004-03-12 | 2008-09-16 | The United States Of America As Represented By The Secretary Of The Navy | Low loss bridge electrode with rounded corners for electro-optic modulators |
| US9746743B1 (en) * | 2015-07-31 | 2017-08-29 | Partow Technologies, Llc. | Electro-optic optical modulator devices and method of fabrication |
| CN110441928A (en) * | 2019-08-05 | 2019-11-12 | 华南师范大学 | A kind of folding electric optical modulator and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050201686A1 (en) * | 2004-03-12 | 2005-09-15 | Cole James H. | Low loss electrodes for electro-optic modulators |
| CN110609399A (en) * | 2019-08-05 | 2019-12-24 | 华南师范大学 | Folded silicon-lithium niobate hybrid integrated electro-optic modulator and its preparation method |
| CN112904599A (en) * | 2021-04-07 | 2021-06-04 | 华中科技大学 | High-speed modulator |
| CN113050309A (en) * | 2021-04-09 | 2021-06-29 | 嘉兴微智光子科技有限公司 | Electro-optical modulator with bent arm |
| CN113467106A (en) * | 2021-07-16 | 2021-10-01 | 苏州极刻光核科技有限公司 | Folded Mach-Zehnder modulator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP4451045A1 (en) * | 2023-04-17 | 2024-10-23 | Suzhou Lycore Technologies Co., Ltd. | Phase modulation module and electro-optic modulator |
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