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WO2023130196A1 - Capteurs d'images multicouches - Google Patents

Capteurs d'images multicouches Download PDF

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Publication number
WO2023130196A1
WO2023130196A1 PCT/CN2022/070015 CN2022070015W WO2023130196A1 WO 2023130196 A1 WO2023130196 A1 WO 2023130196A1 CN 2022070015 W CN2022070015 W CN 2022070015W WO 2023130196 A1 WO2023130196 A1 WO 2023130196A1
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WO
WIPO (PCT)
Prior art keywords
layer
absorption layer
image sensor
electronics
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2022/070015
Other languages
English (en)
Inventor
Peiyan CAO
Yurun LIU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Xpectvision Im Technology Co Ltd
Original Assignee
Suzhou Xpectvision Im Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Xpectvision Im Technology Co Ltd filed Critical Suzhou Xpectvision Im Technology Co Ltd
Priority to CN202280001267.5A priority Critical patent/CN114788001B/zh
Priority to PCT/CN2022/070015 priority patent/WO2023130196A1/fr
Publication of WO2023130196A1 publication Critical patent/WO2023130196A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

Definitions

  • the disclosure herein relates to image sensors, and more particularly to semiconductor X-ray detectors for imaging.
  • X-ray detectors may be used to measure the flux, spatial distribution, spectrum, or other properties of X-rays.
  • X-ray imaging is a radiography technique and can be used to reveal the internal structure of a non-uniformly composed object, such as the human body, that appears opaque to the naked eye.
  • Semiconductor X-ray detectors operate by direct conversion of X-rays into electric signals.
  • Radiographic imaging using semiconductor X-ray detectors provides numerous benefits over earlier-developed techniques. Even so, advances in semiconductor X-ray detector-based imaging are desirable. It is desirable to reduce hole trapping caused by lattice defects (hole traps) in semiconductor X-ray detectors. It is further desirable to improve X-ray detection accuracy, or in other words, to reduce the chance that an incident X-ray photon will not be detected by a semiconductor X-ray detector.
  • the image sensor comprises an absorption layer, an electronics layer, and a printed circuit board.
  • the absorption layer has an active area configured to generate an electrical signal when the absorption layer absorbs and incident X-ray photon.
  • the electronics layer extends in a lateral direction parallel to the absorption layer.
  • the electronics layer overlaps the active area of the absorption layer in an interlayer direction.
  • the interlayer direction is perpendicular to the lateral direction.
  • the electronics layer is configured to receive and process the electrical signal that is generated in the absorption layer.
  • the printed circuit board includes at least one conductive layer and at least one non-conductive substrate.
  • the conductive layer is laminated to the non-conductive substrate.
  • the printed circuit board is configured to receive the processed electrical signal from the electronics layer.
  • the printed circuit board and the active area do not overlap in the interlayer direction.
  • the image sensor comprises a support layer.
  • the support layer fixes the absorption layer, the electronics layer, and the printed circuit board in relation to one another.
  • the support layer adjoins the electronics layer and the printed circuit board on a side of the electronics layer opposite the absorption layer.
  • the support layer adjoins the absorption layer and the printed circuit board on a side of the absorption layer opposite the electronics layer.
  • an electrical connection between the electronics layer and the printed circuit board includes a redistribution layer in the absorption layer.
  • the support layer has a linear attenuation coefficient of less than or equal to 43 cm -1 at 5 keV.
  • the support layer has a mass attenuation coefficient of less than or equal to 20 cm 2 /g at 5 keV.
  • the support layer consists essentially of a fiber reinforced plastic composite.
  • the fiber consists essentially of carbon.
  • the image sensor comprises an electrical connection between the absorption layer and the electronics layer, and an electrical connection between the electronics layer and the printed circuit board.
  • the electrical connection between the absorption layer and the electronics layer includes a bonding wire.
  • the electrical connection between the electronics layer and the printed circuit board includes a bonding wire.
  • the printed circuit board includes a flexible cable.
  • the image sensor comprises at least one via between an electrical contact on a back side of the absorption layer and a circuit element on a front side of the electronics layer.
  • the image sensor comprises a filer material laterally adjacent to the via between the back side of the absorption layer and the front side of the electronics layer.
  • the absorption layer forms a diode.
  • the absorption layer forms a resistor.
  • the electronics layer forms an application specific integrated circuit (ASIC) .
  • ASIC application specific integrated circuit
  • the support layer has a thickness from 0.5 mm to 2 mm.
  • the support layer has a thickness less than 10 mm.
  • the absorption layer has a thickness from 0.001 mm to 1 mm.
  • the electronics layer has a thickness from 0.001 mm to 1 mm.
  • the printed circuit board has a thickness from 0.001 mm to 1 mm.
  • a system comprises the image sensor; and at least one of an X-ray source, or an electron source.
  • the printed circuit board has a first portion and a second portion.
  • the first portion includes a first proximal end and a first distal end.
  • the first distal end extends laterally away from the first proximal end.
  • the second portion includes a second proximal end and a second distal end.
  • the first and second proximal ends converge on a common portion.
  • the first and second distal ends diverge from the common portion to form a concave lateral region.
  • the concave lateral region is between the first and second portions of the printed circuit board.
  • the image sensor comprises a spacer in the concave lateral region.
  • the spacer consists essentially of a fiber reinforced plastic composite.
  • the fiber consists essentially of carbon.
  • an image sensor comprises a first absorption layer, a first electronics layer, a second absorption layer, a second electronics layer, and a printed circuit board.
  • the first absorption layer is configured to generate a first electrical signal when it absorbs a first X-ray photon.
  • the first electronics layer is configured to receive and process the first electrical signal from the first absorption layer.
  • the first electronics layer has a front side and a back side.
  • the first absorption layer has a front side and a back side.
  • the front side of the first electronics layer adjoins the back side of the first absorption layer throughout a first active area.
  • the second absorption layer is configured to generate a second electrical signal when it absorbs a second X-ray photon.
  • the second X-ray photon is a photon not absorbed by the first absorption layer.
  • the second electronics layer is configured to receive and process the second electrical signal from the second absorption layer.
  • the second absorption layer has a front side and a back side.
  • the second electronics layer has a front side and a back side.
  • the front side of the second electronics layer adjoins the back side of the second absorption layer throughout a second active area.
  • the printed circuit board is configured to receive the processed first electrical signal from the first electronics layer.
  • the printed circuit board is configured to receive the processed second electrical signal from the second electronics layer.
  • the printed circuit board has a first portion, a second portion, a front side, and a back side.
  • the first portion includes a first proximal end and a first distal end.
  • the first distal end extends in a lateral plane away from the first proximal end.
  • the second portion includes a second proximal end and a second distal end.
  • the second distal end extends in the lateral plane away from the second proximal end.
  • the first and second proximal ends converge on a common portion of the printed circuit board.
  • the first and second distal ends diverge from the common portion to form a concave lateral region.
  • the concave lateral region is between the first and second portions of the printed circuit board.
  • the front side of the printed circuit board adjoins the back side of the first electronics layer throughout a first support margin.
  • the first support margin overlaps the first and second portions in an interlayer direction normal to the lateral plane.
  • the first electronics layer extends across the concave lateral region between the first and second portions of the printed circuit board.
  • the back side of the printed circuit board adjoins the front side of the second absorption layer throughout a second support margin.
  • the second support margin overlaps the first and second portions of the printed circuit board in the interlayer direction.
  • the second absorption layer extends across the concave lateral region between the first and second portions of the printed circuit board.
  • the first active area and the printed circuit board do not overlap in the interlayer direction.
  • the second active area and the printed circuit board do not overlap in the interlayer direction.
  • the printed circuit board does not surround at least one lateral edge of the concave lateral region.
  • the image sensor comprises a spacer in the concave lateral region.
  • a system comprises the image sensor; and at least one of an X-ray source, or an electron source.
  • Fig. 1A shows a schematic side view, according to an embodiment.
  • Fig. 1B shows a detailed schematic side view, according to an embodiment.
  • Fig. 1C shows a schematic top view, according to an embodiment.
  • Fig. 2A shows a schematic top view, according to an embodiment.
  • Fig. 2B shows a schematic side view, according to an embodiment.
  • Fig. 3 shows a schematic side view, according to an embodiment.
  • Fig. 4A shows a schematic side view, according to an embodiment.
  • Fig. 4B shows an exploded perspective view, according to an embodiment.
  • Fig. 5A shows a schematic side view, according to an embodiment.
  • Fig. 5B shows an exploded perspective view, according to an embodiment.
  • Fig. 6 shows a schematic side view, according to an embodiment.
  • Fig. 7A shows a schematic side view, according to an embodiment.
  • Fig. 7B shows a partial-cutaway perspective view, according to an embodiment.
  • Fig. 8A shows a schematic top view, according to an embodiment.
  • Fig. 8B shows a perspective view, according to an embodiment.
  • Fig. 8C shows an exploded perspective view, according to an embodiment.
  • Fig. 9 shows an exploded perspective view, according to an embodiment.
  • Fig. 1A schematically shows a side view of an image sensor, namely a semiconductor X-ray detector 100, according to an embodiment.
  • the semiconductor X-ray detector 100 may include an X-ray absorption layer 110, an electronics layer 120 (e.g., an application-specific integrated circuit, or ASIC) for processing or analyzing electrical signals incident X-rays generate in the X-ray absorption layer 110, and a printed circuit board (PCB) 140 to carry the processed electrical signals from the electronics layer 120 to other electrical or electronic components.
  • the X-ray absorption layer 110 may include a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof.
  • the PCB 140 may include at least one conductive layer 141 laminated together with at least one non-conductive substrate 143.
  • the conductive layer 141 may include one or more electrically conductive materials such as copper, aluminum, tin, gold, or a combination thereof.
  • the non-conductive substrate 143 may include one or more electrical insulators such as glass cloth, epoxy resin, polyimide, polyester, polyethylene naphthalate (PEN) , or polytetrafluoroethylene (PTFE) .
  • Fig. 1A shows the conductive layer 141 sandwiched between two non-conductive substrates 143, but in other embodiments only one non-conductive substrate 143 is used. In still other embodiments, more than two non-conductive substrates 143 are used.
  • the PCB 140 is a flexible cable, such as a ribbon cable.
  • the X-ray absorption layer 110 extends laterally (across the page in the x direction, and/or into the page in the y direction) .
  • the electronics layer 120 likewise extends laterally (across the page in the x direction and/or into the page in the y direction) .
  • the X-ray absorption layer 110 and the electronics layer 120 are joined in the interlayer (z) direction.
  • the PCB 140 extends laterally (across the page in the x direction, and/or into the page in the y direction) .
  • the electronics layer 120 and the PCB 140 are joined in the interlayer (z) direction.
  • the X-ray absorption layer 110 may absorb the X-ray photon and generate one or more charge carriers (e.g., pairs of electrons and holes) by various mechanisms.
  • charge carriers e.g., pairs of electrons and holes
  • hole trap e.g., a lattice defect
  • hole traps e.g., lattice defects
  • Fig. 1B schematically shows an image sensor, namely a semiconductor X-ray detector 100, according to an embodiment.
  • the X-ray detector 100 may include an X-ray absorption layer 110, an electronics layer 120 (e.g., an ASIC) for processing or analyzing electrical signals incident X-rays generate in the X-ray absorption layer 110, and a PCB 140.
  • the X-ray absorption layer 110 includes a diode.
  • the X-ray absorption layer 110 includes a resistor.
  • the X-ray absorption layer 110 may include one or more diodes (e.g., p-i-n or p-n) formed by a first doped region 111, and one or more discrete regions 114 of a second doped region 113.
  • the second doped region 113 may be separated from the first doped region 111 by an intrinsic region 112.
  • the discrete regions 114 may be separated from one another by the first doped region 111 or the intrinsic region 112.
  • the first doped region 111 and the second doped region 113 may have opposite types of doping (e.g., region 111 is p-type and region 113 is n-type, or region 111 is n-type and region 113 is p-type) .
  • each of the discrete regions 114 of the second doped region 113 forms a diode with the first doped region 111 and the intrinsic region 112.
  • the X-ray absorption layer 110 has a plurality of diodes having the first doped region 111 as a shared electrode.
  • the first doped region 111 may have discrete portions.
  • the X-ray absorption layer includes electrical contacts 119B formed as discrete portions each of which is in electrical contact with one of the discrete regions 114.
  • the plurality of diodes may have an electrical contact 119A as a shared (common) electrode.
  • the X-ray absorption layer 110 may absorb the X-ray photon and generate one or more charge carriers by various mechanisms.
  • An X-ray photon may generate 10 to 100,000 charge carriers.
  • the charge carriers may drift to the electrodes of one of the diodes under an electric field.
  • the field may be an external electric field.
  • the charge carriers may drift in directions such that the charge carriers generated by a single X-ray photon are not substantially shared by two different discrete regions 114 ( “not substantially shared” here meaning less than 5%, or less than 2%, or less than 1%of these charge carriers flow to a different one of the discrete regions 114 than the rest of the charge carriers) .
  • the charge carriers generated by a single X-ray photon can be shared by two different discrete regions 114.
  • Fig. 1C shows an exemplary top view of a portion of the semiconductor X-ray detector 100 with a 4-by-4 array of discrete regions 114.
  • charge carriers generated by an X-ray photon incident around the footprint of one of these discrete regions 114 are not substantially shared with another of these discrete regions 114.
  • the area around a discrete region 114 in which substantially all (more than 95%, more than 98%, or more than 99%) of the charge carriers generated by an X-ray photon incident therein flow to the discrete region 114 is called a pixel associated with that discrete region 114. Namely, less than 5%, less than 2%, or less than 1%of these charge carriers flow beyond the pixel.
  • the number of X-ray photons absorbed (which relates to the incident X-ray intensity) and/or the energies thereof in the pixels associated with the discrete regions 114 may be determined.
  • the spatial distribution (e.g., an image) of incident X-ray intensity may be determined by individually measuring the drift current into each one of an array of discrete regions 114, or by measuring the rate of change of the voltage of each one of an array of discrete regions 114.
  • the electronics layer 120 may include an electronic system 121 suitable for processing or interpreting signals generated by X-ray photons incident on the X-ray absorption layer 110.
  • the electronic system 121 includes analog circuitry-such as a filter network, amplifiers, integrators, and comparators.
  • the electronic system 121 includes digital circuitry-such as a microprocessor 124 and memory a 126.
  • the electronic system 121 may include components shared by the pixels or components dedicated to a single pixel.
  • the electronic system 121 may include an amplifier dedicated to each pixel and the microprocessor 124 and memory 126 may be shared among all the pixels.
  • Fig. 1B shows an embodiment in which the electronic system 121 is electrically connected to the pixels by vias 131.
  • Space between the vias 131 may be filled with a filler material 130, which may increase the mechanical stability of the connection of the electronics layer 120 with the X-ray absorption layer 110.
  • other bonding techniques may be used to connect the electronic system 121 to the pixels without using vias.
  • the electronic system 121 may be electrically connected to the PCB 140 by vias 151. Space between the vias 151 may be filled with a filler material 150, which may increase the mechanical stability of the connection of the electronics layer 120 to the PCB 140. In other embodiments, other bonding techniques may be used to connect the electronic system 121 to the PCB 140.
  • an absorption layer e.g., the absorption layer 110
  • a thinner absorption layer may permit more X-ray photons to pass therethrough without being absorbed
  • a thicker absorption layer may permit fewer X-ray photons to pass therethrough without being absorbed.
  • a thinner absorption layer may have fewer physical defects (e.g., lattice defects)
  • a thicker absorption layer may have more physical defects (e.g., lattice defects)
  • Pairs of negative and positive charge carriers e.g., pairs of electrons and holes
  • pairs of electrons and holes may be generated in an absorption layer (e.g., absorption layer 110) upon absorption of X-ray photons. Some of these electrons and holes may recombine, while others may escape from the absorption layer. The electrons, due to their higher mobility than the holes, may escape from the absorption layer more easily than the holes.
  • Certain physical defects e.g., lattice defects, or hole traps
  • hole traps may cause the holes to become trapped. Over time, as holes accumulate, this may qualitatively deteriorate the performance of the absorption layer. Thus, where it is desirable to minimize hole accumulation, it may be desirable to minimize the thickness of an absorption layer, subject to other constraints.
  • a semiconductor X-ray detector may include features to permit a plurality of absorption layers to be stacked in an interlayer direction so that X-ray photons not absorbed by a first absorption layer may be absorbed by a second (or subsequent) absorption layer. Accordingly, relatively thin absorption layers (characterized by fewer lattice defects or hole traps) may be used, while achieving overall absorption and detection rates comparable to, or higher than, a single relatively thick absorption layer.
  • Fig. 2A schematically shows a top view of an image sensor, namely a semiconductor X-ray detector 200, according to an embodiment.
  • Fig. 2B schematically shows a side view of the semiconductor X-ray detector 200.
  • the X-ray detector 200 includes an absorption layer 210, an electronics layer 220, a printed circuit board (PCB) 240, and a support layer 250.
  • the PCB 240 has one conductive layer 241 sandwiched between two non-conductive substrates 243. When an X-ray photon encounters the absorption layer 210, the X-ray photon is absorbed and a corresponding electrical signal arises in the absorption layer 210.
  • the absorption layer 210 extends laterally (e.g., in the x and y directions) .
  • the interlayer (z) direction is perpendicular to the lateral (e.g., x and y) extents of the absorption layer 210.
  • the electronics layer 220 adjoins the absorption layer 210 in the interlayer (z) direction.
  • the electronics layer 220 extends laterally parallel to the absorption layer 210 (e.g., in one or both of the x and y directions) .
  • An active area 215 of the absorption layer 210 corresponds to the region where the electronics layer 220 and the absorption layer 210 overlap.
  • the lateral (e.g., x and y) extents of the active area 215 can be seen when the X-ray detector 200 is viewed from the top (parallel to the z direction) , as shown in Fig. 2A.
  • the lateral (e.g., x) extent of the active area 215 can be seen when the X-ray detector is viewed from the side (parallel to the y direction) , as shown in Fig. 2B.
  • the absorption layer 210 has a back side 214 and the electronics layer 220 has a front side 222.
  • the active area 215 covers the interface between the back side 214 and the front side 222, as shown in Fig. 2B.
  • pixels in the absorption layer 210 are provided with corresponding circuit elements (e.g., analog circuitry-such as a filter network, amplifiers, integrators, and comparators and/or digital circuitry-such as a microprocessor and memory) in the electronics layer 220, whereby a spatial distribution (e.g., an image) of incident X-rays may be obtained.
  • the electronics layer 220 includes an extended portion 201 that extends laterally (here, in the x direction) past a lateral edge of the absorption layer 210.
  • a bonding wire 231 electrically connects the absorption layer 210 at a location in the active area 215 to the electronics layer 220 at a location in the extended portion 201.
  • the extended portion 201 is outside the active area 215.
  • the electronics layer 220 and the PCB 240 may be mounted on the support layer 250.
  • the support layer 250 fixes the absorption layer 210, the electronics layer 220, and the PCB 240 in relation to one another.
  • the absorption layer 210 and the support layer 250 may adjoin the electronics layer 220 on opposing sides of the electronics layer 220 in the interlayer (z) direction. In other words, the electronics layer 220 is sandwiched between the absorption layer 210 and the support layer 250.
  • Aspace 203 may separate the PCB 240 from the electronics layer 220 laterally (here, in the x direction) .
  • the space 203 is open to an atmosphere. In other embodiments, the space 203 is sealed.
  • a gas e.g., air
  • a spacer fills all or part of the space 203.
  • the PCB 240 directly abuts the electronics layer 220 in a lateral direction.
  • a bonding wire 233 electrically connects the electronics layer 220 to the PCB 240.
  • a gap 205 separates the absorption layer 210 from the PCB 240.
  • the gap 205 may provide lateral separation due to one or both of the extended portion 201 and the space 203, such that there is no overlap between the active area 215 and the PCB 240 in the interlayer (z) direction.
  • the support layer 250 provides mechanical support to both the electronics layer 220 and the PCB 240.
  • the support layer 250 has a stiffness greater than or equal to the respective stiffnesses of the electronics layer 220 and the PCB 240.
  • the support layer 250 is constructed in a manner such that it has a linear attenuation coefficient of less than or equal to 43 cm -1 at 5 keV (one per forty-three centimeters at five kiloelectron volts) .
  • the support layer 250 is made of a material, or a combination of materials, having a mass attenuation coefficient of less than or equal to 20 cm 2 /g at 5 keV (twenty square centimeters per gram at five kiloelectron volts) .
  • the support layer 250 comprises a fiber reinforced plastic composite (e.g., fiberglass, carbon fiber, or the like) .
  • the support layer 250 has a thickness from 0.25 mm to 1 mm, from 0.5 mm to 2 mm, or from 1 mm to 3 mm. In other embodiments, the support layer 250 has a thickness less than 0.25 mm or greater than 3 mm, but less than 10 mm. In various embodiments, the absorption layer 210 has a thickness from 0.001 mm to 1 mm, from 0.01 mm to 1.5 mm, or from 0.5 mm to 2 mm. In other embodiments, the absorption layer 210 has a thickness less than 0.001 mm or greater than 2 mm.
  • the electronics layer 220 has a thickness from 0.001 mm to 1 mm, from 0.01 mm to 1.5 mm, or from 0.5 mm to 2 mm. In other embodiments, the electronics layer 220 has a thickness less than 0.001 mm or greater than 2 mm.
  • Fig. 3 schematically shows a side view of an image sensor, namely a semiconductor X-ray detector 300, according to an embodiment.
  • the X-ray detector 300 includes an absorption layer 310, an electronics layer 320, a printed circuit board (PCB) 340, and a support layer 350.
  • the PCB 340 one conductive layer 341 sandwiched between two non-conductive substrates 343.
  • an X-ray photon encounters the absorption layer 310, the X-ray photon is absorbed, and a corresponding electrical signal arises in the absorption layer 310.
  • the absorption layer 310 extends laterally (e.g., in the x direction) .
  • the interlayer (z) direction is perpendicular to the lateral (x) extent of the absorption layer 310.
  • the electronics layer 320 adjoins the absorption layer 310 in the interlayer (z) direction.
  • the electronics layer 320 extends laterally parallel to the absorption layer 310 (e.g., in the x direction) .
  • An active area 315 of the absorption layer 310 corresponds to the region where the electronics layer 320 and the absorption layer 310 overlap.
  • the absorption layer 310 has a back side 314 and the electronics layer 320 has a front side 322.
  • the active area 315 covers the interface between the back side 314 and the front side 322.
  • pixels in the absorption layer 310 are provided with corresponding circuit elements (e.g., analog circuitry-such as a filter network, amplifiers, integrators, and comparators and/or digital circuitry-such as a microprocessor and memory) in the electronics layer 320, whereby a spatial distribution (e.g., an image) of incident X-rays may be obtained.
  • the absorption layer 310 includes an extended portion 301 that extends laterally (here, in the x direction) past a lateral edge of the electronics layer 320.
  • a redistribution layer (RDL) 331 electrically connects the electronics layer 320 at a location in the active area 315 to the absorption layer 310 at a location in the extended portion 301.
  • the extended portion 301 is outside the active area 315.
  • the absorption layer 310 and the PCB 340 may be mounted on the support layer 350.
  • the support layer 350 fixes the absorption layer 310, the electronics layer 320, and the PCB 340 in relation to one another.
  • the support layer 350 and the electronics layer 320 may adjoin the absorption layer 310 on opposing sides of the absorption layer 310 in the interlayer (z) direction. In other words, the absorption layer 310 is sandwiched between the support layer 350 and the electronics layer 320.
  • Aspace 303 may separate the PCB 340 from the absorption layer 310 laterally (here, in the x direction) .
  • the space 303 is open to a surrounding atmosphere. In other embodiments, the space 303 is sealed.
  • a gas e.g., air
  • a spacer fills all or part of the space 303.
  • the PCB 340 directly abuts the electronics layer 320 in a lateral direction.
  • a bonding wire 333 electrically connects the absorption layer 310 to the PCB 340.
  • a gap 305 separates the electronics layer 320 from the PCB 340.
  • the gap 305 may provide lateral separation due to one or both of the extended portion 301 and the space 303, such that there is no overlap between the active area 315 and the PCB 340 in the interlayer (z) direction.
  • the support layer 350 provides mechanical support to both the absorption layer 310 and the PCB 340.
  • the support layer 350 has a stiffness greater than or equal to the respective stiffnesses of the absorption layer 310 and the PCB 340.
  • the support layer 350 is constructed in a manner such that it has a linear attenuation coefficient of less than or equal to 43 cm -1 at 5 keV (one per forty-three centimeters at five kiloelectron volts) .
  • the support layer 350 is made of a material, or a combination of materials, having a mass attenuation coefficient of less than or equal to 20 cm 2 /g at 5 keV (twenty square centimeters per gram at five kiloelectron volts) .
  • the support layer 350 comprises a fiber reinforced plastic composite (e.g., fiberglass, carbon fiber, or the like) .
  • the support layer 350 has a thickness from 0.25 mm to 1 mm, from 0.5 mm to 2 mm, or from 1 mm to 3 mm. In other embodiments, the support layer 350 has a thickness less than 0.25 mm or greater than 3 mm, but less than 10 mm. In various embodiments, the absorption layer 310 has a thickness from 0.001 mm to 1 mm, from 0.01 mm to 1.5 mm, or from 0.5 mm to 2 mm. In other embodiments, the absorption layer 310 has a thickness less than 0.001 mm or greater than 2 mm.
  • the electronics layer 320 has a thickness from 0.001 mm to 1 mm, from 0.01 mm to 1.5 mm, or from 0.5 mm to 2 mm. In other embodiments, the electronics layer 320 has a thickness less than 0.001 mm or greater than 2 mm.
  • Fig. 4A schematically shows a side view of an image sensor, namely a semiconductor X-ray detector 400, according to an embodiment.
  • Fig. 4B schematically shows an exploded perspective view of an image sensor, namely the semiconductor X-ray detector 400, according to an embodiment.
  • the X-ray detector 400 combines aspects of the X-ray detector 200 (see Figs. 2A, 2B) and the X-ray detector 300 (see Fig. 3) .
  • the X-ray detector 400 includes a first absorption layer 210, a first electronics layer 220, a first PCB 240, a second absorption layer 310, a second electronics layer 320, a second PCB 340, and a support layer 450.
  • an X-ray photon may be absorbed by either the first absorption layer 210 or the second absorption layer 310.
  • the first absorption layer 210 absorbs an X-ray photon, it generates a corresponding electrical signal, which is received by one or more circuit elements in the first electronics layer 220, in substantially the same manner discussed with respect to related embodiments.
  • an X-ray photon may pass through the first absorption layer 210 without being absorbed. In such cases, it may be desirable to facilitate absorption (and thus detection and imaging) of the otherwise undetected X-ray photon.
  • the support layer 450 may be interposed in the interlayer (z) direction between the first absorption layer 210 and the second absorption layer 310. In this manner, an X-ray photon not absorbed in the first absorption layer 210 may be absorbed in the second absorption layer 310.
  • the support layer 450 is sandwiched between the first electronics layer 220 and the second absorption layer 310 in the interlayer (z) direction. Accordingly, an X-ray photon not absorbed in the first absorption layer 210 may pass through the first absorption layer 210, the first electronics layer 220, and the support layer 450, before being absorbed in the second absorption layer 310, thereby generating a corresponding electrical signal, which is received by one or more circuit elements in the second electronics layer 320.
  • the first electronics layer 220 and the second electronics layer 320 are both connected to a system (e.g., a microprocessor, such as a digital signal processor or DSP) by which the spatial distribution (e.g., an image) of incident X-ray intensity may be determined.
  • a system e.g., a microprocessor, such as a digital signal processor or DSP
  • the support layer 450 is constructed in a manner such that it has a linear attenuation coefficient of less than or equal to 43 cm -1 at 5 keV (one per forty-three centimeters at five kiloelectron volts) .
  • the support layer 450 is made of a material, or a combination of materials, having a mass attenuation coefficient of less than or equal to 20 cm 2 /g at 5 keV (twenty square centimeters per gram at five kiloelectron volts) .
  • the support layer 450 comprises a fiber reinforced plastic composite (e.g., fiberglass, carbon fiber, or the like) .
  • the support layer 450 has a thickness from 0.25 mm to 1 mm, from 0.5 mm to 2 mm, or from 1 mm to 3 mm. In other embodiments, the support layer 450 has a thickness less than 0.25 mm or greater than 3 mm, but less than 10 mm.
  • a first active area 215 of the first absorption layer 210 does not overlap a first PCB 240 in the interlayer (z) direction.
  • a second active area 315 of the second absorption layer 310 does not overlap a second PCB 340 in the interlayer (z) direction.
  • the first active area 215 is laterally spaced apart from the first PCB 240 by a first extended portion 201 and a first space 203.
  • the second active area is laterally spaced apart from the second PCB 340 by a second extended portion 301 and a second space 303.
  • the first PCB 240 overlaps the second PCB 340 in the interlayer (z) direction.
  • the first PCB 240 and the second PCB 340 may be aligned in the lateral (x and y) directions. In other embodiments, the first PCB 240 and the second PCB 340 partially overlap in the interlayer (z) direction. In still other embodiments, no parts of the first PCB 240 and the second PCB 340 overlap in the interlayer (z) direction.
  • Fig. 5A schematically shows a side view of an image sensor, namely a semiconductor X-ray detector 500, according to an embodiment.
  • Fig. 5B schematically shows an exploded perspective view of the X-ray detector 500.
  • the X-ray detector 500 includes an absorption layer 510, an electronics layer 520, and a printed circuit board (PCB) 540 having a conductive layer 541 laminated to a non-conductive substrate 543.
  • the PCB 540 has a first portion 540a and a second portion 540b laterally spaced apart from the first portion 540a.
  • An aperture 545 extends laterally between the first portion 540a and the second portion 540b of the PCB 540.
  • the aperture 545 (see, e.g., Fig.
  • concave region is one example of a concave lateral region surrounded by the first portion 540a, second portion 540b, third portion 540c, and fourth portion 540d of the PCB 540.
  • concave region may have one or more edges not surrounded by any portion of an adjoining printed circuit board. (See, e.g., Figs. 8A, 8B, 8C, and 9) .
  • the aperture 545 is open to a surrounding atmosphere. In other embodiments, the aperture 545 is sealed. In some embodiments, a gas (e.g., air) fills all or part of the aperture 545. In some embodiments, a spacer 530 fills all or part of the aperture 545. In some embodiments, the spacer 530 and the PCB 540 both provide mechanical support to the adjoining electronics layer 520. In some embodiments, the spacer 530 is constructed in a manner such that it has a linear attenuation coefficient of less than or equal to 43 cm -1 at 5 keV (one per forty-three centimeters at five kiloelectron volts) .
  • the spacer 530 is made of a material, or a combination of materials, having a mass attenuation coefficient of less than or equal to 20 cm 2 /g at 5 keV (twenty square centimeters per gram at five kiloelectron volts) .
  • the spacer 530 comprises a fiber reinforced plastic composite (e.g., fiberglass, carbon fiber, or the like) .
  • the electronics layer 520 has a back side 524 that adjoins a front side 542 of the PCB 540.
  • the absorption layer 510 has a back side 514 that adjoins a front side 522 of the electronics layer 520.
  • An active area 515 is formed within the lateral (x and y) extents of the interface between the absorption layer 510 and the electronics layer 520.
  • the electronics layer 520 includes an extended portion 501 that extends laterally past the lateral edges of the absorption layer 510.
  • a bonding wire 531 electrically connects a location in the active area 515 to a location in the extended portion 501.
  • the extended portion 501 is laterally outside the active area 215.
  • a support margin 507 refers to a region where the extended portion 501 overlaps the PCB 540.
  • the support margin 507 and the active area 515 do not overlap in the interlayer (z) direction.
  • the electronics layer 520 extends laterally in the x direction to overlap the first portion 540a, the aperture 545, the spacer 530 (if present) , and the second portion 540b.
  • the electronics layer 120 extends laterally in the y direction to overlap a third portion 540c, the aperture 545, the spacer 530 (if present) , and a fourth portion 540d.
  • the lateral (x and y) extents of the aperture 545 and the extended portion 501 are such that the active area 515 and the PCB 540 do not overlap.
  • the electronics layer 520 mechanically fixes the absorption layer 510 in relation to the PCB 540, but the active area 515 does not overlap the PCB 540 in the interlayer (z) direction.
  • the aperture 545 may have a square shape. In other embodiments, the aperture 545 may have other shapes (e.g., ellipse, circle, rectangle, triangle, pentagon, hexagon, polygon, or closed curve) . In some embodiments, opposite portions of the PCB 540 (e.g., the first portion 540a and the second portion 540b, or the third portion 540c and the fourth portion 540d) are parallel. In other embodiments, opposite portions of the PCB 540 are not parallel. In some embodiments, an angle ⁇ (theta) between the first portion 540a and the third portion 540c is 90 degrees.
  • various portions of the PCB 540 are spaced apart by angles less than, greater than, or equal to 90 degrees.
  • a plurality of the apertures 545 forms an array across a region of the PCB 540 (e.g., rectangular grid, triangular mesh, hexagonal honeycomb) .
  • Some embodiments include a plurality of apertures 545 having a uniform shape and size.
  • Some embodiments include a plurality of apertures 545 having non-uniform shapes and sizes.
  • Fig. 6 schematically shows a side view of an image sensor, namely a semiconductor X-ray detector 600, according to an embodiment.
  • the X-ray detector 600 includes an absorption layer 610, an electronics layer 620, and a printed circuit board (PCB) 640.
  • the PCB 640 has a conductive layer 641 laminated to a non-conductive substrate 643. having a first portion 640a and a second portion 640b laterally spaced apart from the first portion 640a.
  • An aperture 645 extends laterally between the first portion 640a and the second portion 640b.
  • the aperture 645 is open to a surrounding atmosphere. In other embodiments, the aperture 645 is sealed. In some embodiments, a gas (e.g., air) fills all or part of the aperture 645. In some embodiments, a spacer 630 fills all or part of the aperture 645. In some embodiments, the spacer 630 and the PCB 640 both provide mechanical support to the adjoining absorption layer 610. In some embodiments, the spacer 630 is constructed in a manner such that it has a linear attenuation coefficient of less than or equal to 43 cm -1 at 5 keV (one per forty-three centimeters at five kiloelectron volts) .
  • the spacer 630 is made of a material, or a combination of materials, having a mass attenuation coefficient of less than or equal to 20 cm 2 /g at 5 keV (twenty square centimeters per gram at five kiloelectron volts) .
  • the spacer 630 comprises a fiber reinforced plastic composite (e.g., fiberglass, carbon fiber, or the like) .
  • the absorption layer 610 has a front side 612 that adjoins a back side 644 of the PCB 640.
  • the electronics layer 620 has a front side 622 that adjoins a back side 614 of the absorption layer 610.
  • An active area 615 is formed within the lateral (x and y) extents of the interface between the absorption layer 610 and the electronics layer 620.
  • the absorption layer 610 includes an extended portion 601 that extends laterally past the lateral edges of the electronics layer 620.
  • a bonding wire 631 electrically connects a location in the active area 615 to a location in the extended portion 601.
  • the extended portion 601 is laterally outside the active area 615.
  • the absorption layer 610 extends laterally in the x direction to overlap the first portion 640a, the aperture 645, the spacer 630 (if present) , and the second portion 640b.
  • the lateral extents of the aperture 645 and the extended portion 601 are such that the active area 615 and the PCB 640 do not overlap.
  • the absorption layer 610 mechanically fixes the electronics layer in relation to the PCB 640, but the active area 615 does not overlap the PCB 640 in the interlayer (z) direction.
  • Fig. 7A schematically shows a side view of an image sensor, namely a semiconductor X-ray detector 700, according to an embodiment.
  • Fig. 7B schematically shows a partial cutaway perspective view of the semiconductor X-ray detector 700, according to an embodiment.
  • the X-ray detector 700 combines aspects of the X-ray detector 500 (see Figs. 5A, 5B) and the X-ray detector 600 (see Fig. 6) .
  • the X-ray detector 700 includes a first absorption layer 510, a first electronics layer 520, a second absorption layer 610, a second electronics layer 620, and a PCB 740.
  • the PCB 740 includes a conductive layer 741 sandwiched between two non-conductive substrates 743.
  • an X-ray photon may be absorbed by either the first absorption layer 510 or the second absorption layer 610.
  • the first absorption layer 510 absorbs an X-ray photon, it generates a corresponding electrical signal, which is received by one or more circuit elements in the first electronics layer 520, in substantially the same manner discussed with respect to related embodiments.
  • an X-ray photon may pass through the first absorption layer 510 without being absorbed. In such cases, it may be desirable to facilitate absorption (and thus detection and imaging) of the otherwise undetected X-ray photon.
  • the PCB 740 may be interposed in the interlayer (z) direction between the first absorption layer 510 and the second absorption layer 610, with an aperture 745 being provided in the PCB 740 to facilitate passage of X-ray photons. In this manner, an X-ray photon not absorbed in the first absorption layer 510 may be absorbed in the second absorption layer 610.
  • the PCB 740-including the aperture 745- is sandwiched between the first electronics layer 520 and the second absorption layer 610 in the interlayer (z) direction. Accordingly, an X-ray photon not absorbed in the first absorption layer 510 may pass through the first absorption layer 510, the first electronics layer 520, and the aperture 745, before being absorbed in the second absorption layer 610 to thereby generate a corresponding electrical signal in the second absorption layer 610, and the electrical signal being received by one or more circuit elements in the second electronics layer 620.
  • the first electronics layer 520 and the second electronics layer 620 are both connected to a system (e.g., a microprocessor, such as a digital signal processor or DSP) by which the spatial distribution (e.g., an image) of incident X-ray intensity may be determined.
  • a system e.g., a microprocessor, such as a digital signal processor or DSP
  • the aperture 745 is open to a surrounding atmosphere. In other embodiments, the aperture 745 is sealed. In some embodiments, a gas (e.g., air) fills all or part of the aperture 745. In some embodiments, a spacer 730 fills all or part of the aperture 745. In some embodiments, the spacer 730 and the PCB 740 both provide mechanical support to the adjoining first electronics layer 520 and to the second absorption layer 610. In some embodiments, the spacer 730 is constructed in a manner such that it has a linear attenuation coefficient of less than or equal to 43 cm -1 at 5 keV (one per forty-three centimeters at five kiloelectron volts) .
  • the spacer 730 is made of a material, or a combination of materials, having a mass attenuation coefficient of less than or equal to 20 cm 2 /g at 5 keV (twenty square centimeters per gram at five kiloelectron volts) .
  • the spacer 730 comprises a fiber reinforced plastic composite (e.g., fiberglass, carbon fiber, or the like) .
  • the PCB 740 may include an array (e.g., a 3-by-3 grid) of rectangular apertures 745.
  • the apertures 745 may have another shape (e.g., triangular, hexagonal) .
  • Some embodiments include a plurality of apertures 745 each having a uniform shape and size.
  • Some embodiments include a plurality of apertures 745 having non-uniform shapes and sizes.
  • the PCB 740 has a thickness from 0.25 mm to 1 mm, from 0.5 mm to 2 mm, or from 1 mm to 3 mm. In other embodiments, the PCB 740 has a thickness less than 0.25 mm or greater than 3 mm, but less than 10 mm. In various embodiments, the first electronics layer 520 has a thickness from 0.001 mm to 1 mm, from 0.01 mm to 1.5 mm, or from 0.5 mm to 2 mm. In other embodiments, the first electronics layer 520 has a thickness less than 0.001 mm or greater than 2 mm.
  • the second absorption layer 610 has a thickness from 0.001 mm to 1 mm, from 0.01 mm to 1.5 mm, or from 0.5 mm to 2 mm. In other embodiments, the second absorption layer 610 has a thickness less than 0.001 mm or greater than 2 mm.
  • Fig. 8A schematically shows a top view of an image sensor, namely a semiconductor X-ray detector 800, according to an embodiment.
  • Fig. 8B schematically shows a perspective view of the X-ray detector 800, according to an embodiment.
  • Fig. 8C schematically shows an exploded perspective view of the X-ray detector 800, according to an embodiment.
  • the X-ray detector 800 includes an absorption layer 810, an electronics layer 820, and a printed circuit board (PCB) 840.
  • the PCB 840 has a conductive layer 841 sandwiched between two non-conductive substrates 843.
  • the absorption layer 810 adjoins the electronics layer 820 throughout an active area 815.
  • the electronics layer 820 adjoins the PCB 840 throughout a support margin 807.
  • the PCB 840 has a first portion 846 and a second portion 848.
  • the first portion 846 has a first proximal end 846a and first distal end 846b.
  • the second portion 848 has a second proximal end 848a and a second distal end 848b.
  • the first proximal end 846a and the second proximal end 848a are connected and converge on a common portion 847.
  • the first distal end 846b and the second distal end 848b diverge from the common portion 847 to form a concave lateral region 845 between the first portion 846 and the second portion 848.
  • the first portion 846 and the second portion 848 form an angle ⁇ (theta) in the lateral (x-y) plane, or in other words, the plane normal to the interlayer (z) direction.
  • the angle ⁇ (theta) is 90 degrees. In other embodiments the angle ⁇ (theta) is less than or greater than 90 degrees.
  • the support margin 807 overlaps the first portion 846 and the second portion 848 in the interlayer (z) direction.
  • a lateral gap 805 separates the first portion 846 and the second portion 848 from the closest lateral edges of the active area 815 of the absorption layer 810.
  • the lateral gap 805 has a width from 0.0001 mm to 0.1 mm, from 0.01 mm to 1 mm, or from 0.1 mm to 2mm. In other embodiments, the lateral gap 805 has a width less than 0.0001 mm or greater than 2 mm.
  • the support margin 807 has a lateral width from 0.0001 mm to 0.1 mm, from 0.01 mm to 1 mm, or from 0.1 mm to 2mm. In other embodiments the support margin 807 has a lateral width less than 0.0001 mm or greater than 2 mm.
  • the PCB 840 supports the absorption layer 810 and the electronics layer 820 on at least one lateral edge but does not support the absorption layer 810 and the electronics layer 820 on at least one other lateral edge.
  • the electronics layer 820 has a generally rectangular shape and the PCB 840 has an “L” shape, with the first portion 846 and the second portion 848 corresponding to the legs of the “L. ”
  • the first portion 846 overlaps a neighboring edge of the electronics layer 820 in the interlayer (z) direction and the second portion 848 overlaps another neighboring edge of the electronics layer 820 in the interlayer (z) direction.
  • the PCB 840 does not overlap the other two lateral edges of the electronics layer 820 in the interlayer (z) direction.
  • the concave lateral region 845 is open to a surrounding atmosphere. In other embodiments, the concave lateral region 845 is sealed. In some embodiments, a gas (e.g., air) fills all or part of the concave lateral region 845. In some embodiments, a spacer 830 fills all or part of the concave lateral region 845. In some embodiments, the spacer 830 and the PCB 840 both provide mechanical support to the adjoining electronics layer 820.
  • a gas e.g., air
  • the spacer 830 is constructed in a manner such that it has a linear attenuation coefficient of less than or equal to 43 cm -1 at 5 keV (one per forty-three centimeters at five kiloelectron volts) .
  • the spacer 830 is made of a material, or a combination of materials, having a mass attenuation coefficient of less than or equal to 20 cm 2 /g at 5 keV (twenty square centimeters per gram at five kiloelectron volts) .
  • the spacer 830 comprises a fiber reinforced plastic composite (e.g., fiberglass, carbon fiber, or the like) .
  • Fig. 9 schematically shows an exploded perspective view of an image sensor, namely a semiconductor X-ray detector 900, according to an embodiment.
  • the X-ray detector 900 includes a first absorption layer 810, a first electronics layer 820, and a printed circuit board (PCB) 840, substantially as discussed with respect to embodiments of the X-ray detector 800, shown in Figs. 8A, 8B, and 8C.
  • the X-ray detector 900 includes a second absorption layer 910, and a second electronics layer 920.
  • the second absorption layer 910 adjoins the second electronics layer 920 throughout a second active area 915.
  • the second absorption layer 910 adjoins the PCB 840 throughout a second support margin 907, on a side of the PCB 840 opposite the first support margin 807.
  • the PCB 840 may be interposed in the interlayer (z) direction between the first absorption layer 810 and the second absorption layer 910. In this manner, an X-ray photon not absorbed in the first absorption layer 810 may be absorbed in the second absorption layer 910.
  • the PCB 840 and the spacer 830 are sandwiched between the first electronics layer 820 and the second absorption layer 910 in the interlayer (z) direction, and the first active area 815 and the second active area 915 do not overlap the PCB 840 in the interlayer (z) direction.
  • a physical part e.g., a spacer
  • a fiber reinforced plastic composite when the part includes less than 5%, less than 1%, or less than 0.1%of another material by mass or by volume.
  • a fiber may be said to consist essentially of a given material (e.g., carbon) when the fiber includes less than 5%, less than 1%, less than 0.1%, or less than 0.01%of another substance by mass or by volume.

Landscapes

  • Measurement Of Radiation (AREA)

Abstract

Un capteur d'image approprié pour détecter des rayons X a une couche d'absorption, une couche électronique et une carte de circuit imprimé. Une zone active de la couche d'absorption est conçue pour générer un signal électrique lorsque la couche d'absorption absorbe un photon de rayons X incident. La carte de circuit imprimé et la zone active ne se chevauchent pas dans une direction de couche de liaison intercouche.
PCT/CN2022/070015 2022-01-04 2022-01-04 Capteurs d'images multicouches Ceased WO2023130196A1 (fr)

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CN202280001267.5A CN114788001B (zh) 2022-01-04 2022-01-04 多层图像传感器
PCT/CN2022/070015 WO2023130196A1 (fr) 2022-01-04 2022-01-04 Capteurs d'images multicouches

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PCT/CN2022/070015 WO2023130196A1 (fr) 2022-01-04 2022-01-04 Capteurs d'images multicouches

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