[go: up one dir, main page]

WO2023190062A1 - Composition de résine, article durci, stratifié, procédé de production d'article durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur - Google Patents

Composition de résine, article durci, stratifié, procédé de production d'article durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur Download PDF

Info

Publication number
WO2023190062A1
WO2023190062A1 PCT/JP2023/011591 JP2023011591W WO2023190062A1 WO 2023190062 A1 WO2023190062 A1 WO 2023190062A1 JP 2023011591 W JP2023011591 W JP 2023011591W WO 2023190062 A1 WO2023190062 A1 WO 2023190062A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
formula
independently
repeating unit
resin composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/011591
Other languages
English (en)
Japanese (ja)
Inventor
敦靖 野崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to CN202380031624.7A priority Critical patent/CN118974115A/zh
Priority to KR1020247032280A priority patent/KR20240156622A/ko
Priority to JP2024512287A priority patent/JPWO2023190062A1/ja
Publication of WO2023190062A1 publication Critical patent/WO2023190062A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/04—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polycarbonamides, polyesteramides or polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14—Polymers provided for in subclass C08G
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14—Polymers provided for in subclass C08G
    • C08F290/145—Polyamides; Polyesteramides; Polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/14—Polyamide-imides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic

Definitions

  • resin materials manufactured from resin compositions containing resin are utilized in various fields.
  • polyimide has excellent heat resistance and insulation properties, so it is used for various purposes.
  • the above-mentioned uses are not particularly limited, but in the case of semiconductor devices for mounting, for example, they may be used as materials for insulating films and sealing materials, or as protective films. It is also used as a base film and coverlay for flexible substrates.
  • polyimide is used in the form of a resin composition containing a polyimide precursor.
  • a resin composition is applied to a base material by coating, for example, to form a photosensitive film, and then, as necessary, exposure, development, heating, etc. are performed to form a cured product on the base material. be able to.
  • the polyimide precursor is cyclized, for example, by heating, and becomes polyimide in the cured product. Since the resin composition can be applied by known coating methods, there is a high degree of freedom in designing the shape, size, application position, etc. of the resin composition when it is applied. It can be said that it has excellent characteristics. In addition to the high performance of polyimide, there are increasing expectations for the industrial application of the above-mentioned resin compositions due to their excellent manufacturing adaptability.
  • Patent Document 1 discloses a photosensitive resin composition containing a polyimide precursor having 50 mol% or more of a specific structural unit based on the total structural units, a compound that generates radicals when irradiated with actinic rays, and a solvent. Are listed.
  • Patent Document 2 describes a photosensitive resin composition containing (A) a polyimide precursor, (B) a photopolymerization initiator, (C) a photopolymerizable substance, and (D) a solvent, wherein the polyimide precursor is has a specific structure, the solvent (D) is selected from at least one of ⁇ -butyrolactone, dimethyl sulfoxide, and 3-methoxy-N,N-dimethylpropionamide;
  • the cured product obtained from this composition has excellent moisture resistance and a low coefficient of thermal expansion (that is, a low coefficient of thermal expansion (CTE)). There is.
  • Z 2 is a trivalent organic group having no ester group or amide group
  • Y 2 is a divalent organic group represented by the following formula (Y-1)
  • a 3 is is an oxygen atom or -NR Z -
  • R Z is a hydrogen atom or a monovalent organic group
  • R 3 is a hydrogen atom or a monovalent organic group.
  • Z L2 is a trivalent organic group having no ester group or amide group
  • G L1 is a divalent organic group
  • a L3 is an oxygen atom or -NR Z -.
  • R Z is a hydrogen atom or a monovalent organic group
  • R L3 is a hydrogen atom or a monovalent organic group
  • #1 represents the bonding site with the nitrogen atom in formula (2)
  • #2 is Represents a bonding site with a structure outside the repeating unit represented by formula (2).
  • Y 2 is a divalent organic group represented by the above formula (Y-1)
  • a 3 is an oxygen atom or -NR Z -
  • R Z is a hydrogen atom or 1 It is a valent organic group
  • R 3 is a hydrogen atom or a monovalent organic group
  • L 2 is a group represented by the above formula (L-2).
  • ⁇ 3> The resin composition according to ⁇ 1> or ⁇ 2>, wherein the polyimide precursor contains a repeating unit represented by the following formula (2-2) as the repeating unit represented by the above formula (2). thing.
  • a 3 is each independently an oxygen atom or -NR Z -, R Z is each independently a hydrogen atom or a monovalent organic group, and R 3 is each independently, is a hydrogen atom or a monovalent organic group, R 31 is each independently a halogen atom, an alkyl group, a trifluoromethyl group, or an alkoxy group, n represents an integer of 0 to 4, and R 32 is each independently , a halogen atom, an alkyl group, a trifluoromethyl group, or an alkoxy group, m represents an integer of 0 to 4, and G 1 represents a divalent aromatic group or an aliphatic group.
  • Z 3 is a tetravalent organic group having two or more ether bonds
  • Y 3 is a divalent organic group
  • a 1 and A 2 are each independently an oxygen atom or - NR Z -
  • R Z is a hydrogen atom or a monovalent organic group
  • R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group.
  • R a1 each independently represents a monovalent group
  • m1 represents an integer of 0 to 3
  • R a2 each independently represents a monovalent group
  • m2 represents 0 to 3.
  • R a3 each independently represents a monovalent group
  • m3 represents an integer from 0 to 3
  • *1 to *4 each represent the bonding site with the carbonyl group in formula (3).
  • R b1 each independently represents a monovalent group
  • n1 represents an integer of 0 to 3
  • R b2 each independently represents a monovalent group
  • n2 represents 0 to 3.
  • R b3 each independently represents a monovalent group
  • n3 represents an integer from 0 to 4
  • R b4 each independently represents a monovalent group
  • n4 represents an integer from 0 to 3.
  • J 1 and J 2 each independently represent a hydrogen atom, an alkyl group, or a trifluoromethyl group
  • *1 to *4 each represent a bonding site with a carbonyl group in formula (3).
  • the repeating unit represented by formula (1) is 10 mol% or more and less than 50 mol% of the entire resin
  • the repeating unit of the polyimide represented by formula (2) is ⁇ 1> which is 10 mol% or more and less than 50 mol% of the total
  • the repeating unit different from the repeating unit represented by formula (1) and the repeating unit represented by formula (2) is 5 mol% or more ⁇ The resin composition according to any one of ⁇ 9>.
  • ⁇ 11> The polymerizable compound according to any one of ⁇ 1> to ⁇ 10>, wherein the polymerizable compound includes a compound having at least one group selected from the group consisting of a urea group, an amide group, and a urethane group.
  • Resin composition. ⁇ 12> The resin composition according to any one of ⁇ 1> to ⁇ 11>, which is used for forming an interlayer insulating film for a rewiring layer.
  • ⁇ 13> A cured product obtained by curing the resin composition according to any one of ⁇ 1> to ⁇ 12>.
  • ⁇ 14> A laminate including two or more layers made of the cured product according to ⁇ 13>, and a metal layer between any of the layers made of the cured product.
  • ⁇ 15> A method for producing a cured product, comprising a film forming step of applying the resin composition according to any one of ⁇ 1> to ⁇ 12> onto a substrate to form a film.
  • the method for producing a cured product according to ⁇ 15> including an exposure step of selectively exposing the film and a development step of developing the film using a developer to form a pattern.
  • a method for producing a laminate including the method for producing a cured product according to any one of ⁇ 15> to ⁇ 17>.
  • a method for manufacturing a semiconductor device including the method for manufacturing a cured product according to any one of ⁇ 15> to ⁇ 17> or the method for manufacturing a laminate according to ⁇ 18>.
  • ⁇ 20> A semiconductor device comprising the cured product according to ⁇ 13> or the laminate according to ⁇ 14>.
  • ⁇ 21> A polyimide precursor containing a repeating unit represented by formula (1) and a repeating unit represented by formula (2) below.
  • Z 1 is a tetravalent organic group represented by any of the following formulas (2a) to (2d), and Y 1 is 2 represented by the following formula (Y-1).
  • a 1 and A 2 are each independently an oxygen atom or -NR Z -, R Z is a hydrogen atom or a monovalent organic group, and R 1 and R 2 are each independently a valent organic group. , a hydrogen atom or a monovalent organic group.
  • Z 2 is a trivalent organic group having no ester group or amide group
  • Y 2 is a divalent organic group represented by the following formula (Y-1)
  • a 3 is is an oxygen atom or -NR Z -
  • R Z is a hydrogen atom or a monovalent organic group
  • R 3 is a hydrogen atom or a monovalent organic group
  • L 2 is a single bond or a formula (L-2)
  • L 1 and L 2 are each independently a divalent group or a single bond that is not conjugated with the benzene ring to which they are bonded
  • *1 to *4 are each, Represents the bonding site with the carbonyl group in formula (1).
  • R 4 to R 11 are each independently a hydrogen atom or a monovalent group, and at least one of R 4 to R 11 is an alkyl group, a halogen atom, a trifluoromethyl group, or It is an alkoxy group, and R 6 and R 8 and R 7 and R 9 may be combined to form a ring structure, and * each represents a bonding site with the nitrogen atom in formula (1).
  • Z L2 is a trivalent organic group having no ester group or amide group
  • G L1 is a divalent organic group
  • a L3 is an oxygen atom or -NR Z -.
  • R Z is a hydrogen atom or a monovalent organic group
  • R L3 is a hydrogen atom or a monovalent organic group
  • #1 represents the bonding site with the nitrogen atom in formula (2)
  • #2 is Represents a bonding site with a structure outside the repeating unit represented by formula (2).
  • a 3 is each independently an oxygen atom or -NR Z -, R Z is each independently a hydrogen atom or a monovalent organic group, and R 3 is each independently, is a hydrogen atom or a monovalent organic group, R 31 is each independently a halogen atom, an alkyl group, a trifluoromethyl group, or an alkoxy group, n represents an integer of 0 to 4, and R 32 is each independently , a halogen atom, an alkyl group, a trifluoromethyl group, or an alkoxy group, m represents an integer of 0 to 4, and G 1 represents a divalent aromatic group or an aliphatic group.
  • the polyimide precursor is represented by the following formula (3) as a repeating unit different from both the repeating unit represented by the above formula (1) and the repeating unit represented by the above formula (2).
  • Z 3 is a tetravalent organic group having two or more ether bonds
  • Y 3 is a divalent organic group
  • a 1 and A 2 are each independently an oxygen atom or - NR Z -
  • R Z is a hydrogen atom or a monovalent organic group
  • R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group.
  • Z 3 in the above formula (3) is a structure represented by the following formula (Z3-1) or formula (Z3-2), according to any one of ⁇ 21> to ⁇ 23> Polyimide precursor.
  • R a1 each independently represents a monovalent group
  • m1 represents an integer of 0 to 3
  • R a2 each independently represents a monovalent group
  • m2 represents 0 to 3.
  • R a3 each independently represents a monovalent group
  • m3 represents an integer from 0 to 3
  • *1 to *4 each represent the bonding site with the carbonyl group in formula (3). represent.
  • R b1 each independently represents a monovalent group
  • n1 represents an integer of 0 to 3
  • R b2 each independently represents a monovalent group
  • n2 represents 0 to 3.
  • R b3 each independently represents a monovalent group
  • n3 represents an integer from 0 to 4
  • R b4 each independently represents a monovalent group
  • n4 represents an integer from 0 to 3.
  • J 1 and J 2 each independently represent a hydrogen atom, an alkyl group, or a trifluoromethyl group
  • *1 to *4 each represent a bonding site with a carbonyl group in formula (3).
  • a resin composition that yields a cured product with low CTE and excellent moisture resistance, a cured product obtained by curing the resin composition, a laminate containing the cured product, and a method for producing the cured product , a method for manufacturing the laminate, a method for manufacturing a semiconductor device including the method for manufacturing the laminate, and a semiconductor device including the cured product or the laminate.
  • a numerical range expressed using the symbol " ⁇ ” means a range that includes the numerical values written before and after " ⁇ " as the lower limit and upper limit, respectively.
  • the term “step” includes not only independent steps but also steps that cannot be clearly distinguished from other steps as long as the intended effect of the step can be achieved.
  • substitution or unsubstitution includes a group having a substituent (atomic group) as well as a group having no substituent (atomic group).
  • alkyl group includes not only an alkyl group without a substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
  • exposure includes not only exposure using light but also exposure using particle beams such as electron beams and ion beams, unless otherwise specified. Examples of the light used for exposure include actinic rays or radiation such as the bright line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays (EUV light), X-rays, and electron beams.
  • (meth)acrylate means both “acrylate” and “methacrylate”, or either “(meth)acrylate”
  • (meth)acrylic means both “acrylic” and “methacrylic”
  • (meth)acryloyl means either or both of "acryloyl” and “methacryloyl.”
  • Me in the structural formula represents a methyl group
  • Et represents an ethyl group
  • Bu represents a butyl group
  • Ph represents a phenyl group.
  • the total solid content refers to the total mass of all components of the composition excluding the solvent.
  • the solid content concentration is the mass percentage of other components excluding the solvent with respect to the total mass of the composition.
  • weight average molecular weight (Mw) and number average molecular weight (Mn) are values measured using gel permeation chromatography (GPC), and are defined as polystyrene equivalent values.
  • weight average molecular weight (Mw) and number average molecular weight (Mn) are expressed using, for example, HLC-8220GPC (manufactured by Tosoh Corporation) and guard column HZ-L, TSKgel Super HZM-M, TSKgel.
  • THF tetrahydrofuran
  • NMP N-methyl-2-pyrrolidone
  • a detector with a wavelength of 254 nm of UV rays is used for detection in the GPC measurement.
  • each layer constituting a laminate when the positional relationship of each layer constituting a laminate is described as "upper” or “lower", there is another layer above or below the reference layer among the plurality of layers of interest. It would be good if there was. That is, a third layer or element may be further interposed between the reference layer and the other layer, and the reference layer and the other layer do not need to be in contact with each other.
  • the direction in which layers are stacked relative to the base material is referred to as "top”, or if there is a resin composition layer, the direction from the base material to the resin composition layer is referred to as "top”. , the opposite direction is called "down".
  • the composition may contain, as each component contained in the composition, two or more compounds corresponding to that component. Further, unless otherwise specified, the content of each component in the composition means the total content of all compounds corresponding to that component.
  • the temperature is 23° C.
  • the atmospheric pressure is 101,325 Pa (1 atm)
  • the relative humidity is 50% RH. In this specification, combinations of preferred aspects are more preferred aspects.
  • the resin composition of the present invention (hereinafter also simply referred to as "resin composition”) is a polyimide precursor containing a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (2). It contains a polymerizable compound, a polymerizable compound, and a polymerization initiator.
  • Z 1 is a tetravalent organic group represented by any of the following formulas (2a) to (2d), and Y 1 is 2 represented by the following formula (Y-1).
  • a 1 and A 2 are each independently an oxygen atom or -NR Z -, R Z is a hydrogen atom or a monovalent organic group, and R 1 and R 2 are each independently a valent organic group.
  • Z 2 is a trivalent organic group having no ester group or amide group
  • Y 2 is a divalent organic group represented by the following formula (Y-1)
  • a 3 is is an oxygen atom or -NR Z -
  • R Z is a hydrogen atom or a monovalent organic group
  • R 3 is a hydrogen atom or a monovalent organic group
  • L 2 is a single bond or a formula (L-2) It is a group represented by In formulas (2a) to (2d), L 1 and L 2 are each independently a divalent group or a single bond that is not conjugated with the benzene ring to which they are bonded, and *1 to *4 are each, Represents the bonding site with the carbonyl group in formula (1).
  • R 4 to R 11 are each independently a hydrogen atom or a monovalent group, and at least one of R 4 to R 11 is an alkyl group, a halogen atom, a trifluoromethyl group, or It is an alkoxy group, and R 6 and R 8 and R 7 and R 9 may be combined to form a ring structure, and * each represents a bonding site with the nitrogen atom in formula (1).
  • Z L2 is a trivalent organic group having no ester group or amide group
  • G L1 is a divalent organic group
  • a L3 is an oxygen atom or -NR Z -.
  • R Z is a hydrogen atom or a monovalent organic group
  • R L3 is a hydrogen atom or a monovalent organic group
  • #1 represents the bonding site with the nitrogen atom in formula (2)
  • #2 is Represents a bonding site with a structure outside the repeating unit represented by formula (2).
  • the resin composition of the present invention is preferably used to form a photosensitive film that is subjected to exposure and development, and is preferably used to form a film that is subjected to exposure and development using a developer containing an organic solvent.
  • the resin composition of the present invention can be used, for example, to form an insulating film of a semiconductor device, an interlayer insulating film for a rewiring layer, a stress buffer film, etc., and can be used for forming an interlayer insulating film for a rewiring layer. preferable.
  • the resin composition of the present invention is used for forming an interlayer insulating film for a rewiring layer.
  • the resin composition of the present invention is preferably used for forming a photosensitive film to be subjected to negative development.
  • negative development refers to development in which non-exposed areas are removed by development during exposure and development
  • positive development refers to development in which exposed areas are removed by development.
  • the above-mentioned exposure method, the above-mentioned developer, and the above-mentioned development method include, for example, the exposure method explained in the exposure step in the explanation of the method for producing a cured product, and the developer and development method explained in the development step. is used.
  • the resin composition used in the present invention contains a repeating unit represented by formula (1) which has a rigid structure, and also contains a repeating unit represented by formula (2), so that the final cured product is contains a rigid structure, and an amide structure remains in the structure.
  • the resin also has a rigid structure, and it is thought that the interaction between the amide structures makes the resin easier to orient, so that the coefficient of thermal expansion of the resin decreases.
  • the cured product obtained from the resin composition of the present invention is considered to have excellent moisture resistance. This is presumed to be because the strong hydrogen bond of the amide group in the structure represented by formula (2) improves the interaction between the resins, making it difficult for water to enter. Furthermore, by including such a rigid structure, Young's modulus can be increased.
  • a soft structure can be introduced into the resin, which improves the elongation at break of the resin and achieves both Young's modulus and elongation at break. I can do it.
  • a soft structure is introduced into the resin, so the resin moves more easily in the cured product, and pores are formed in the resin. This prevents the formation of water penetration paths. As a result, it is thought that the moisture resistance of the resulting cured product is further improved.
  • Patent Documents 1 and 2 contain a polyimide precursor containing a repeating unit represented by formula (1) and a repeating unit represented by formula (2), a polymerizable compound, and a polymerization initiator. There is no description of the resin composition.
  • the resin composition of the present invention comprises a polyimide precursor (hereinafter also referred to as "specific resin") containing a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (2).
  • a polyimide precursor hereinafter also referred to as "specific resin”
  • Z 1 is a tetravalent organic group represented by any of the following formulas (2a) to (2d)
  • Y 1 is 2 represented by the following formula (Y-1).
  • a 1 and A 2 are each independently an oxygen atom or -NR Z -
  • R Z is a hydrogen atom or a monovalent organic group
  • R 1 and R 2 are each independently a valent organic group.
  • Z 2 is a trivalent organic group having no ester group or amide group
  • Y 2 is a divalent organic group represented by the following formula (Y-1)
  • a 3 is is an oxygen atom or -NR Z -
  • R Z is a hydrogen atom or a monovalent organic group
  • R 3 is a hydrogen atom or a monovalent organic group
  • L 2 is a single bond or a formula (L-2)
  • L 1 and L 2 are each independently a divalent group or a single bond that is not conjugated with the benzene ring to which they are bonded
  • *1 to *4 are each, Represents the bonding site with the carbonyl group in formula (1).
  • R 4 to R 11 are each independently a hydrogen atom or a monovalent group, and at least one of R 4 to R 11 is an alkyl group, a halogen atom, a trifluoromethyl group, or It is an alkoxy group, and R 6 and R 8 and R 7 and R 9 may be combined to form a ring structure, and * each represents a bonding site with the nitrogen atom in formula (1).
  • Z L2 is a trivalent organic group having no ester group or amide group
  • G L1 is a divalent organic group
  • a L3 is an oxygen atom or -NR Z -.
  • R Z is a hydrogen atom or a monovalent organic group
  • R L3 is a hydrogen atom or a monovalent organic group
  • #1 represents the bonding site with the nitrogen atom in formula (2)
  • #2 is Represents a bonding site with a structure outside the repeating unit represented by formula (2).
  • a 1 and A 2 in formula (1) each independently represent an oxygen atom or -NR Z -, and preferably an oxygen atom.
  • R Z represents a hydrogen atom or a monovalent organic group, preferably a monovalent organic group.
  • examples of R Z include a hydrocarbon group.
  • R Z may be combined with R 1 to form a ring structure.
  • the ring structure formed includes hydrocarbon rings, preferably aliphatic hydrocarbon rings, and more preferably saturated aliphatic hydrocarbon rings. Further, the ring structure is preferably a 5-membered ring or a 6-membered ring.
  • a 2 is -NR Z -
  • R Z may be combined with R 2 to form a ring structure.
  • the preferred embodiments of the ring structure formed are the same as the preferred embodiments of the ring structure formed by the combination of R Z and R 1 described above.
  • R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group, and at least one of R 1 and R 2 is a monovalent organic group having an ethylenically unsaturated bond. It is preferable that there be. In the present invention, it is also preferable that either R 1 and R 2 in formula (1) and R 3 in formula (2) be a group having an ethylenically unsaturated bond. Furthermore, an embodiment in which both R 1 and R 2 in formula (1) are monovalent organic groups having an ethylenically unsaturated bond is also one of the preferred embodiments of the present invention.
  • Examples of the monovalent organic group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (for example, a vinyl phenyl group, etc.), ( A group having a meth)acrylamide group, a (meth)acryloyloxy group, or a group having a group represented by the following formula (III) is preferred, and a group having a group represented by the following formula (III) is more preferred. Further, an embodiment in which the monovalent organic group having an ethylenically unsaturated bond is a group represented by the following formula (III) is also one of the preferred embodiments of the present invention.
  • R 200 represents a hydrogen atom, a methyl group, an ethyl group, or a methylol group, and preferably a hydrogen atom or a methyl group.
  • * represents a bonding site with another structure.
  • R 201 represents an alkylene group having 2 to 12 carbon atoms, -CH 2 CH(OH)CH 2 -, a cycloalkylene group or a polyalkyleneoxy group.
  • R 201 examples include alkylene groups such as ethylene group, propylene group, trimethylene group, tetramethylene group, pentamethylene group, hexamethylene group, octamethylene group, and dodecamethylene group, 1,2-butanediyl group, 1, Examples include 3-butanediyl group, -CH 2 CH (OH) CH 2 -, polyalkyleneoxy group, alkylene groups such as ethylene group and propylene group, -CH 2 CH (OH) CH 2 -, cyclohexyl group, polyalkylene group.
  • An oxy group is more preferred, and an alkylene group such as an ethylene group or a propylene group, or a polyalkyleneoxy group is even more preferred.
  • a polyalkyleneoxy group refers to a group in which two or more alkyleneoxy groups are directly bonded.
  • the alkylene groups in the plurality of alkyleneoxy groups contained in the polyalkyleneoxy group may be the same or different.
  • the arrangement of the alkyleneoxy groups in the polyalkyleneoxy group may be a random arrangement or an arrangement having blocks. Alternatively, an arrangement having an alternating pattern or the like may be used.
  • the number of carbon atoms in the alkylene group (including the number of carbon atoms in the substituent when the alkylene group has a substituent) is preferably 2 or more, more preferably 2 to 10, and 2 to 6.
  • the alkylene group may have a substituent.
  • Preferred substituents include alkyl groups, aryl groups, halogen atoms, and the like.
  • the number of alkyleneoxy groups contained in the polyalkyleneoxy group is preferably 2 to 20, more preferably 2 to 10, and even more preferably 2 to 6.
  • polyalkyleneoxy groups include polyethyleneoxy groups, polypropyleneoxy groups, polytrimethyleneoxy groups, polytetramethyleneoxy groups, or multiple ethyleneoxy groups and multiple propyleneoxy groups.
  • a group bonded to an oxy group is preferable, a polyethyleneoxy group or a polypropyleneoxy group is more preferable, and a polyethyleneoxy group is even more preferable.
  • the ethyleneoxy groups and propyleneoxy groups may be arranged randomly, or may be arranged to form blocks. , may be arranged in an alternating pattern. Preferred embodiments of the repeating number of ethyleneoxy groups, etc. in these groups are as described above.
  • the specific resin when R 1 is a hydrogen atom or when R 2 is a hydrogen atom, the specific resin may form a counter salt with a tertiary amine compound having an ethylenically unsaturated bond.
  • a tertiary amine compound having such an ethylenically unsaturated bond is N,N-dimethylaminopropyl methacrylate.
  • R 1 and R 2 may be monovalent organic groups having no ethylenically unsaturated bond.
  • a group represented by a combination with -S-, -SO 2 - or -NR N - is preferred, a group represented by a hydrocarbon group or a combination of a hydrocarbon group and -O- is more preferred, and an alkyl group, aromatic hydrocarbon group or polyalkyleneoxy group are more preferred.
  • R N each independently represents a hydrogen atom or a monovalent organic group, and * each represents a bonding site with a carbon atom, preferably a bonding site with a hydrocarbon group.
  • R N is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, even more preferably a hydrogen atom or a methyl group, and particularly preferably a hydrogen atom.
  • the alkyl group when simply described as an alkyl group, the alkyl group includes any of a linear alkyl group, a branched alkyl group, and a cyclic alkyl group. The same applies to alkylene groups, aliphatic hydrocarbon groups, etc.
  • Z 1 is a tetravalent organic group represented by any of the above formulas (2a) to (2d), and is a tetravalent organic group represented by formula (2a). is more preferable.
  • L 1 and L 2 are each independently preferably -C(R C ) 2 -, -Si(R S ) 2 -, -O-, or a single bond, and -C It is more preferably (R C ) 2 -, -Si(R S ) 2 -, or -O-, and even more preferably -C(R C ) 2 -. Also. It is preferable that at least one of L 1 and L 2 is -C(R C ) 2 - or -Si(R S ) 2 -.
  • R C is each independently a hydrogen atom or a hydrocarbon group, preferably an alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group. Furthermore, two R C 's may be combined to form a ring structure.
  • R S is each independently a hydrocarbon group, preferably an alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group. Furthermore, two R S may be combined to form a ring structure. In formulas (2a) to (2d), one of *1 or *2 is bonded to the carbonyl group bonded to A 1 in formula (1), and the other is a group other than the repeating unit represented by formula (1).
  • One of *3 or *4 is bonded to the carbonyl group bonded to A2 in formula (1), and the other is bonded to NH described in formula (1). It is preferable to bond with a carbonyl group.
  • hydrogen atoms in the ring structures described in formulas (2a) to (2d) may be substituted with known substituents. Examples of the substituent include an alkyl group, a halogen atom, an alkyl group in which a hydrogen atom is substituted with a halogen atom, and the like.
  • Y 1 is a divalent organic group represented by formula (Y-1).
  • at least one of R 4 to R 11 is an alkyl group, a halogen atom, a trifluoromethyl group, or an alkoxy group, and from the viewpoint of heat-and-moisture resistance, an alkyl group, a fluorine atom, or A trifluoromethyl group is preferred, and a fluorine atom or a trifluoromethyl group is more preferred.
  • at least two of R 4 to R 11 are preferably an alkyl group, a fluorine atom, a trifluoromethyl group, or an alkoxy group.
  • the alkyl group is preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group.
  • the alkoxy group is preferably an alkoxy group having 1 to 4 carbon atoms, more preferably a methoxy group.
  • R 6 and R 8 and R 7 and R 9 may be combined to form a ring structure.
  • the ring structure formed is not particularly limited, but a hydrocarbon ring is preferred.
  • the ring structure formed is preferably a 5-membered ring structure or a 6-membered ring structure, and more preferably a 5-membered ring structure.
  • Y 1 is a divalent organic group represented by formula (Y-2).
  • R 5 and R 8 are each independently an alkyl group, a halogen atom, a trifluoromethyl group, or an alkoxy group, and * each represents a bonding site with the nitrogen atom in formula (1). represents.
  • R 5 and R 8 are each independently preferably an alkyl group, a fluorine atom, or a trifluoromethyl group; It is more preferable that The alkyl group in R 5 and R 8 is preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group.
  • the alkoxy group in R 5 and R 8 is preferably an alkoxy group having 1 to 4 carbon atoms, and more preferably a methoxy group.
  • divalent organic group represented by formula (Y-1) examples include structures represented by the following formula, but the present invention is not limited thereto.
  • * has the same meaning as * in formula (Y-1).
  • Z2 is a trivalent organic group having no ester group or amide group, and includes a linear or branched aliphatic group, a cyclic aliphatic group, and an aromatic hydrocarbon group. Examples include a heteroaromatic group, or a group in which two or more of these are connected by a single bond or a connecting group, such as a straight-chain aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, and a group having two or more carbon atoms.
  • a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic hydrocarbon group having 6 to 20 carbon atoms, or a group combining two or more of these with a single bond or a connecting group is preferable, and an aromatic group having 6 to 20 carbon atoms,
  • a group in which two or more aromatic hydrocarbon groups having 6 to 20 carbon atoms are combined by a single bond or a connecting group is more preferable, and an aromatic hydrocarbon group having 6 to 20 carbon atoms is even more preferable.
  • the group is preferably a group such as -O-, -S-, an alkylene group, a halogenated alkylene group, an arylene group, or a linking group in which two or more of these are bonded together.
  • the alkylene group is preferably an alkylene group having 1 to 20 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, and even more preferably an alkylene group having 1 to 4 carbon atoms.
  • the above halogenated alkylene group is preferably a halogenated alkylene group having 1 to 20 carbon atoms, more preferably a halogenated alkylene group having 1 to 10 carbon atoms, and even more preferably a halogenated alkylene group having 1 to 4 carbon atoms.
  • examples of the halogen atom in the halogenated alkylene group include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, and the like, with a fluorine atom being preferred.
  • the halogenated alkylene group may have a hydrogen atom or all of the hydrogen atoms may be substituted with a halogen atom, but it is preferable that all of the hydrogen atoms are substituted with a halogen atom.
  • examples of preferred halogenated alkylene groups include (ditrifluoromethyl)methylene groups and the like.
  • the arylene group is preferably a phenylene group or a naphthylene group, more preferably a phenylene group, and even more preferably a 1,3-phenylene group or a 1,4-phenylene group.
  • preferred embodiments of A 3 , R 3 and Y 2 are the same as preferred embodiments of A 1 , R 1 and Y 1 in formula (1) above.
  • L 2 represents a single bond or a group represented by formula (L-2), and from the viewpoint of pattern resolution, the group represented by formula (L-2) is preferable.
  • formula (L-2) preferred embodiments of Z L2 , A L3 , and R L3 are the same as the preferred embodiments of Z 2 , A 3 , and R 3 in formula (2), respectively.
  • G L1 is preferably a group represented by formula (Y-1) above. Further, G L1 may be the same group as R 112 in formula (4) described below.
  • #1 represents a bonding site with the nitrogen atom in formula (2)
  • #2 represents a bonding site with a structure outside the repeating unit represented by formula (2).
  • L 2 in formula (2) is a group represented by formula (L-2)
  • the repeating unit represented by formula (2) is a group represented by formula (2-S) below. It is preferable that there be.
  • Z 2 , Y 2 , A 3 , and R 3 have the same meanings as Z 2 , Y 2 , A 3 , and R 3 in formula (2), and preferred embodiments are also the same. be.
  • Z L2 , G L1 , A L3 , and R L3 are respectively synonymous with Z L2 , G L1 , A L3 , and R L3 in formula (L-2), and preferred embodiments are also included. The same is true.
  • the specific resin preferably contains a repeating unit represented by the following formula (2-1) as the repeating unit represented by the above formula (2).
  • Y 2 is a divalent organic group represented by the above formula (Y-1)
  • a 3 is an oxygen atom or -NR Z -
  • R Z is a hydrogen atom or 1 It is a valent organic group
  • R 3 is a hydrogen atom or a monovalent organic group
  • L 2 is a group represented by the above formula (L-2).
  • the specific resin contains a repeating unit represented by the following formula (2-2) as the repeating unit represented by the above formula (2).
  • a 3 is each independently an oxygen atom or -NR Z -
  • R Z is each independently a hydrogen atom or a monovalent organic group
  • R 3 is each independently, is a hydrogen atom or a monovalent organic group
  • R 31 is each independently a halogen atom, an alkyl group, a trifluoromethyl group, or an alkoxy group
  • n represents an integer of 0 to 4
  • R 32 is each independently , a halogen atom, an alkyl group, a trifluoromethyl group, or an alkoxy group
  • m represents an integer of 0 to 4
  • G 1 represents a divalent aromatic group or an aliphatic group.
  • R 31 is preferably each independently a halogen atom, an alkyl group, or a trifluoromethyl group, and more preferably a fluorine atom or a trifluoromethyl group.
  • R 32 is preferably each independently a halogen atom, an alkyl group, or a trifluoromethyl group, and more preferably a fluorine atom or a trifluoromethyl group.
  • R 31 and R 32 are preferably a fluorine atom, an alkyl group, or a trifluoromethyl group, and more preferably a fluorine atom or a trifluoromethyl group.
  • n and m are preferably an integer of 1 to 4.
  • n is preferably 1 or 2, more preferably 1.
  • m is preferably 1 or 2, more preferably 1.
  • G 1 is preferably a group represented by the above-mentioned formula (Y-1).
  • R 112 in formula (4) described below may be used.
  • the repeating unit represented by the formula (2-2) is, for example, a carboxylic acid anhydride group such as trimellitic anhydride chloride and a carboxylic acid halide group, as described in SP-10 in Examples described below.
  • the repeating unit represented by the above formula (2) is produced by using a compound having a carboxylic acid anhydride group and a carboxyl group, such as trimellitic anhydride, as a raw material during the synthesis of the polyimide precursor. It may also be introduced into the precursor.
  • trimellitic anhydride two are anhydrides in trimellitic anhydride
  • Isomers occur in repeating units. By reducing this isomer, for example, developability may be improved and formation of fine patterns may become easier.
  • the specific resin further contains a repeating unit represented by the following formula (3) as a repeating unit different from either the repeating unit represented by the above formula (1) or the repeating unit represented by the above formula (2). It is preferable to include.
  • Z 3 is a tetravalent organic group having two or more ether bonds
  • Y 3 is a divalent organic group
  • a 1 and A 2 are each independently an oxygen atom or - NR Z -
  • R Z is a hydrogen atom or a monovalent organic group
  • R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group.
  • Z 3 is preferably a tetravalent organic group containing two or more ether groups and an aromatic ring structure.
  • the ether group is a divalent group represented by *-O-*, and both * are groups that bond to a hydrocarbon group.
  • Another preferred embodiment of the present invention is an embodiment in which both ends of the two ether groups in Z 3 are directly bonded to an aromatic ring structure.
  • "A and B are directly bonded” means that A and B are bonded without including a linking group between them.
  • the number of ether groups in Z 3 is preferably 2 to 6, more preferably 2 to 4, even more preferably 2 or 3, and particularly preferably 2.
  • the "main chain” refers to the relatively longest bond chain in the resin molecule
  • the "side chain” refers to other bond chains.
  • the presence of a certain structure on the main chain means that the main chain is connected by a certain structure, and if the certain structure is removed, the main chain will be fragmented.
  • the aromatic ring structure in Z 3 may be an aromatic hydrocarbon ring structure or an aromatic heterocyclic structure, but is preferably an aromatic hydrocarbon ring structure.
  • the aromatic hydrocarbon ring structure is preferably an aromatic hydrocarbon ring structure having 6 to 20 carbon atoms, more preferably an aromatic hydrocarbon ring structure having 6 to 10 carbon atoms, and even more preferably a benzene ring structure.
  • the aromatic heterocyclic structure is preferably a 5-membered ring structure, a 6-membered ring structure, or a combination thereof, and more preferably a 6-membered ring structure.
  • Examples of the heteroatom in the aromatic heterocyclic structure include an oxygen atom, a nitrogen atom, a sulfur atom, and the like.
  • the number of benzene ring structures contained in Z 3 is preferably 1 to 6, more preferably 1 to 4.
  • Z 3 has three or more aromatic ring structures.
  • the number of aromatic ring structures is preferably 3 to 6, more preferably 3 to 5, and even more preferably 3 or 4.
  • the aromatic ring structure may have a known substituent. Examples of the substituent include an alkyl group, a halogen atom, an alkyl group in which a hydrogen atom is substituted with a halogen atom, and the like.
  • the aromatic ring structure is present on the main chain of the resin.
  • Z 3 preferably has a structure represented by the following formula (Z3-1) or formula (Z3-2).
  • R a1 each independently represents a monovalent group
  • m1 represents an integer of 0 to 3
  • R a2 each independently represents a monovalent group
  • m2 represents 0 to 3.
  • R a3 each independently represents a monovalent group
  • m3 represents an integer from 0 to 3
  • *1 to *4 each represent the bonding site with the carbonyl group in formula (3). represent.
  • R b1 each independently represents a monovalent group
  • n1 represents an integer of 0 to 3
  • R b2 each independently represents a monovalent group
  • n2 represents 0 to 3.
  • R b3 each independently represents a monovalent group
  • n3 represents an integer from 0 to 4
  • R b4 each independently represents a monovalent group
  • n4 represents an integer from 0 to 3.
  • J 1 and J 2 each independently represent a hydrogen atom, an alkyl group, or a trifluoromethyl group
  • *1 to *4 each represent a bonding site with a carbonyl group in formula (3).
  • R a1 is preferably a halogen atom, an aliphatic hydrocarbon group, or an aromatic group.
  • the hydrogen atom in the aliphatic hydrocarbon group or aromatic group may be further substituted with a halogen atom or the like.
  • m1 represents an integer of 0 to 3, preferably 0 to 2, and more preferably 0 or 1.
  • an embodiment in which m1 is 0 is also one of the preferred embodiments of the present invention.
  • preferred embodiments of R a2 and R a3 are the same as those of R a1 .
  • m2 is preferably 0 to 2, more preferably 0 or 1.
  • m2 is 0 is also one of the preferred embodiments of the present invention.
  • preferred embodiments of m3 are the same as those of m1.
  • one of *1 or *2 is bonded to the carbonyl group bonded to A 1 in formula (1), and the other is a structure outside the repeating unit represented by formula (3).
  • a carbonyl group that is bonded to a carbonyl group, one of *3 or *4 is bonded to the carbonyl group that is bonded to A 2 in formula (3), and the other is bonded to NH described in formula (3). It is preferable to combine with.
  • R b1 is preferably a halogen atom, an aliphatic hydrocarbon group, or an aromatic group.
  • the hydrogen atom in the aliphatic hydrocarbon group or aromatic group may be further substituted with a halogen atom or the like.
  • n1 represents an integer of 0 to 3, preferably 0 to 2, and more preferably 0 or 1. Furthermore, an embodiment in which n1 is 0 is also one of the preferred embodiments of the present invention.
  • preferred embodiments of R b2 , R b3 and R b4 are the same as the preferred embodiment of R b1 .
  • n2 is preferably 0 to 2, more preferably 0 or 1.
  • n2 is 0 is also one of the preferred embodiments of the present invention.
  • preferred embodiments of n3 are the same as those of n2.
  • preferred embodiments of n4 are the same as those of n1.
  • J 1 and J 2 each independently represent a hydrogen atom, an alkyl group, or a trifluoromethyl group, and preferably a hydrogen atom, a methyl group, or a trifluoromethyl group.
  • one of *1 or *2 is bonded to the carbonyl group bonded to A1 in formula (3), and the other is a structure outside the repeating unit represented by formula (3).
  • a carbonyl group that is bonded to a carbonyl group, one of *3 or *4 is bonded to the carbonyl group that is bonded to A 2 in formula (3), and the other is bonded to NH described in formula (3). It is preferable to combine with.
  • Y 3 is preferably a divalent organic group represented by formula (Y-1).
  • R 112 in formula (4) described below may be used.
  • the specific resin is represented by the following formula (4) as a repeating unit represented by the above formula (1), a repeating unit represented by the formula (2), and a repeating unit different from any of the formula (3). It may further include repeating units. That is, the repeating unit corresponding to the repeating unit represented by formula (1), the repeating unit represented by formula (2), and the repeating unit represented by formula (3) are all represented by the following formula (4 ) shall not apply to the repeating unit represented by In formula (4), A 1 and A 2 each independently represent an oxygen atom or -NR z -, R 111 represents a divalent organic group, and R 115 represents a tetravalent organic group. , R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group, and R z represents a hydrogen atom or a monovalent organic group.
  • a 1 and A 2 in formula (4) each independently represent an oxygen atom or -NR z -, and preferably an oxygen atom.
  • Rz represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom.
  • R 111 in formula (4) represents a divalent organic group.
  • divalent organic groups include groups containing straight-chain or branched aliphatic groups, cyclic aliphatic groups, and aromatic groups, including straight-chain or branched aliphatic groups having 2 to 20 carbon atoms, A group consisting of a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 3 to 20 carbon atoms, or a combination thereof is preferable, and a group containing an aromatic group having 6 to 20 carbon atoms is more preferable.
  • the hydrocarbon group in the chain may be substituted with a group containing a hetero atom
  • the ring member hydrocarbon group may be substituted with a hetero atom-containing group.
  • R 111 in formula (4) include groups represented by -Ar- and -Ar-L-Ar-, with a group represented by -Ar-L-Ar- being preferred.
  • Ar is each independently an aromatic group
  • L is a single bond or an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO -, -S-, -SO 2 -, -NHCO-, or a combination of two or more of the above.
  • R 111 is derived from a diamine.
  • diamines used for producing the specific resin include linear or branched aliphatic, cyclic aliphatic, and aromatic diamines.
  • One type of diamine may be used, or two or more types may be used.
  • R 111 is a linear or branched aliphatic group having 2 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 3 to 20 carbon atoms, or any of these.
  • a diamine containing a combination of groups is preferable, and a diamine containing an aromatic group having 6 to 20 carbon atoms is more preferable.
  • the hydrocarbon group in the chain may be substituted with a group containing a hetero atom.
  • the hydrocarbon group in the chain may be substituted with a group containing a hetero atom. may be substituted with a group containing.
  • groups containing aromatic groups include the following.
  • diamine specifically, 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane or 1,6-diaminohexane; 1,2- or 1,3-diaminocyclopentane, 1,2-, 1,3- or 1,4-diaminocyclohexane, 1,2-, 1,3- or 1,4-bis(aminomethyl)cyclohexane , bis-(4-aminocyclohexyl)methane, bis-(3-aminocyclohexyl)methane, 4,4'-diamino-3,3'-dimethylcyclohexylmethane and isophoronediamine; m- or p-phenylenediamine, diaminotoluene, 4,4'- or 3,3'-diaminobiphenyl, 4,4'-diaminodipheny
  • diamines (DA-1) to (DA-18) described in paragraphs 0030 to 0031 of International Publication No. 2017/038598.
  • diamines having two or more alkylene glycol units in the main chain described in paragraphs 0032 to 0034 of International Publication No. 2017/038598 are also preferably used.
  • R 111 is preferably represented by -Ar-L-Ar- from the viewpoint of flexibility of the resulting organic film.
  • Ar is each independently an aromatic group
  • L is an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S- , -SO 2 -, -NHCO-, or a combination of two or more of the above.
  • Ar is preferably a phenylene group
  • L is preferably an aliphatic hydrocarbon group having 1 or 2 carbon atoms optionally substituted with a fluorine atom, -O-, -CO-, -S- or -SO 2 - .
  • the aliphatic hydrocarbon group here is preferably an alkylene group.
  • R 111 is preferably a divalent organic group represented by the following formula (51) or formula (61).
  • a divalent organic group represented by formula (61) is more preferable.
  • R 50 to R 57 are each independently a hydrogen atom, a fluorine atom, or a monovalent organic group, and at least one of R 50 to R 57 is a fluorine atom, a methyl group, or a trifluoro It is a methyl group, and * each independently represents a bonding site with the nitrogen atom in formula (4).
  • the monovalent organic groups R 50 to R 57 include unsubstituted alkyl groups having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms), and unsubstituted alkyl groups having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms). Examples include fluorinated alkyl groups.
  • R 58 and R 59 each independently represent a fluorine atom, a methyl group, or a trifluoromethyl group, and * each independently represents a bonding site with the nitrogen atom in formula (4). represent.
  • Examples of the diamine giving the structure of formula (51) or formula (61) include 2,2'-dimethylbenzidine, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 2,2'- Bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminoctafluorobiphenyl, and the like. These may be used alone or in combination of two or more.
  • R 115 in formula (4) represents a tetravalent organic group.
  • a tetravalent organic group containing an aromatic ring is preferable, and a group represented by the following formula (5) or formula (6) is more preferable.
  • * each independently represents a bonding site with another structure.
  • R 112 is a single bond or a divalent linking group, and is a single bond or an aliphatic hydrocarbon group having 1 to 10 carbon atoms, which may be substituted with a fluorine atom, -O-, A group selected from -CO-, -S-, -SO 2 -, -NHCO-, and combinations thereof is preferable, and the number of carbon atoms optionally substituted with a single bond or a fluorine atom is preferable.
  • it is a group selected from 1 to 3 alkylene groups, -O-, -CO-, -S- and -SO 2 -, including -CH 2 -, -C(CF 3 ) 2 -, - More preferably, it is a divalent group selected from the group consisting of C(CH 3 ) 2 -, -O-, -CO-, -S- and -SO 2 -.
  • R 115 include a tetracarboxylic acid residue remaining after removal of an anhydride group from a tetracarboxylic dianhydride.
  • the specific resin may contain only one type of tetracarboxylic dianhydride residue, or may contain two or more types of tetracarboxylic dianhydride residues as the structure corresponding to R115 .
  • the tetracarboxylic dianhydride is represented by the following formula (O).
  • R 115 represents a tetravalent organic group.
  • the preferred range of R 115 is the same as R 115 in formula (4), and the preferred range is also the same.
  • tetracarboxylic dianhydride examples include pyromellitic dianhydride (PMDA), 3,3',4,4'-biphenyltetracarboxylic dianhydride, 3,3',4,4'- Diphenylsulfidetetracarboxylic dianhydride, 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 3,3' , 4,4'-diphenylmethanetetracarboxylic dianhydride, 2,2',3,3'-diphenylmethanetetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 2,3,3',4'-benzophenonetetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2,3,
  • preferred examples include tetracarboxylic dianhydrides (DAA-1) to (DAA-5) described in paragraph 0038 of International Publication No. 2017/038598.
  • R 111 and R 115 may have an OH group. More specifically, R 111 includes a residue of a bisaminophenol derivative.
  • the polymerizable group examples include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. It will be done.
  • the radically polymerizable group contained in the specific resin is preferably a group having an ethylenically unsaturated bond.
  • the specific resin may be copolymerized with an aliphatic group having a siloxane structure for the purpose of improving adhesion to the substrate.
  • examples include embodiments in which bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. are used as the diamine.
  • Preferred phenolic compounds include phenols such as phenol, methoxyphenol, methylphenol, naphthalen-1-ol, naphthalen-2-ol, and hydroxystyrene.
  • Preferred monoamine compounds include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6- Aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1- Carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminona
  • the content of other resins may be low.
  • the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, and 10% by mass or less based on the total solid content of the resin composition. is more preferable, even more preferably 5% by mass or less, even more preferably 1% by mass or less.
  • the lower limit of the content is not particularly limited, and may be 0% by mass or more.
  • the resin composition of the present invention may contain only one type of other resin, or may contain two or more types of other resins. When two or more types are included, it is preferable that the total amount falls within the above range.
  • Preferred radical crosslinking agents other than those mentioned above include radically polymerizable compounds described in paragraphs 0204 to 0208 of International Publication No. 2021/112189. This content is incorporated herein.
  • the number of radically polymerizable groups in the crosslinking agent U may be only one or two or more, preferably 1 to 10, more preferably 1 to 6, particularly preferably 1 to 4.
  • the radically polymerizable group value (mass of compound per mole of radically polymerizable group) in crosslinking agent U is preferably 150 to 400 g/mol.
  • the lower limit of the radically polymerizable group value is more preferably 200 g/mol or more, still more preferably 210 g/mol or more, and preferably 220 g/mol or more. More preferably, it is 230 g/mol or more, even more preferably 240 g/mol or more, and particularly preferably 250 g/mol or more.
  • Examples of the hydrocarbon group include those listed in Z U1 , and preferred embodiments are also the same.
  • the crosslinking agent U has at least one of a hydroxy group, an alkyleneoxy group, and a cyano group.
  • the hydroxy group may be an alcoholic hydroxy group or a phenolic hydroxy group, but is preferably an alcoholic hydroxy group.
  • the alkyleneoxy group is preferably an alkyleneoxy group having 2 to 20 carbon atoms, more preferably an alkyleneoxy group having 2 to 10 carbon atoms, and an alkyleneoxy group having 2 to 4 carbon atoms.
  • An oxy group is more preferred, an ethylene group or a propylene group is even more preferred, and an ethylene group is particularly preferred.
  • the alkyleneoxy group may be included in the crosslinking agent U as a polyalkyleneoxy group.
  • the number of repeating alkyleneoxy groups is preferably 2 to 10, more preferably 2 to 6.
  • the crosslinking agent U has two or more structures selected from the group consisting of a hydroxy group, an alkyleneoxy group (a polyalkyleneoxy group when forming a polyalkyleneoxy group), and a cyano group in the molecule. However, it is also preferable to have only one in the molecule.
  • an alkyleneoxy group (However, when constituting a polyalkyleneoxy group, a polyalkyleneoxy group) and has the above linking group L2-1 or the above linking group L2-2, an alkyleneoxy group (However, when constituting a polyalkyleneoxy group, the structure bonded to the side opposite to the connecting group L2-1 or the connecting group L2-2 is not particularly limited, but may be a hydrocarbon group, A group represented by a radically polymerizable group or a combination thereof is preferred.
  • the hydrocarbon group is preferably a hydrocarbon group having 20 or less carbon atoms, more preferably a hydrocarbon group having 18 or less carbon atoms, and still more preferably a hydrocarbon group having 16 or less carbon atoms.
  • the heteroatom contained in the aromatic heterocyclic group is preferably a nitrogen atom, an oxygen atom or a sulfur atom.
  • the aromatic group is, for example, a linking group that connects two or more radically polymerizable groups and includes a urea bond, a urethane bond, or an amide bond, or a linking group selected from the group consisting of the above-mentioned hydroxy group, alkyleneoxy group, and cyano group. and at least one radically polymerizable group contained in the crosslinking agent U.
  • crosslinking agent U examples include the following compounds, but the crosslinking agent U is not limited thereto.
  • PEG200 diacrylate refers to polyethylene glycol diacrylate in which the formula weight of polyethylene glycol chains is about 200.
  • a monofunctional radical crosslinking agent can be preferably used as the radical crosslinking agent from the viewpoint of suppressing warpage of the pattern (cured product).
  • monofunctional radical crosslinking agents include n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, carbitol (meth)acrylate, and cyclohexyl (meth)acrylate.
  • acrylate benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, N-methylol (meth)acrylamide, glycidyl (meth)acrylate, polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, etc.
  • Acrylic acid derivatives, N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam, allyl glycidyl ether, and the like are preferably used.
  • the monofunctional radical crosslinking agent a compound having a boiling point of 100° C. or higher at normal pressure is also preferred in order to suppress volatilization before exposure.
  • examples of the radical crosslinking agent having two or more functionalities include allyl compounds such as diallyl phthalate and triallyl trimellitate.
  • One type of radical crosslinking agent may be used alone, or a mixture of two or more types may be used. When two or more types are used together, it is preferable that the total amount falls within the above range.
  • the acid or base is preferably an acid or base generated from a photoacid generator or a photobase generator in the exposure step.
  • the other crosslinking agent is preferably a compound having at least one group selected from the group consisting of an acyloxymethyl group, a methylol group, an ethylol group, and an alkoxymethyl group.
  • a compound having a structure in which at least one group selected from the group consisting of groups is directly bonded to a nitrogen atom is more preferable.
  • a crosslinking agent using melamine is a melamine crosslinking agent
  • a crosslinking agent using glycoluril, urea or alkylene urea is a urea crosslinking agent
  • a crosslinking agent using alkylene urea is an alkylene urea crosslinking agent.
  • a crosslinking agent using benzoguanamine is called a benzoguanamine-based crosslinking agent.
  • the resin composition of the present invention preferably contains at least one compound selected from the group consisting of a urea-based crosslinking agent and a melamine-based crosslinking agent, and includes a glycoluril-based crosslinking agent and a melamine-based crosslinking agent described below. It is more preferable that at least one compound selected from the group consisting of agents is included.
  • R 100 represents an alkyl group or an acyl group.
  • R 101 and R 102 each independently represent a monovalent organic group, and may be bonded to each other to form a ring.
  • a+d is 5 or less
  • b+e is 4 or less
  • c+f is 4 or less.
  • R 5 in a group that decomposes under the action of an acid to produce an alkali-soluble group a group that leaves under the action of an acid, and a group represented by -C(R 4 ) 2 COOR 5 , for example, -C(R 36 )(R 37 )(R 38 ), -C(R 36 )(R 37 )(OR 39 ), and -C(R 01 )(R 02 )(OR 39 ).
  • R 36 to R 39 each independently represent an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group.
  • R 36 and R 37 may be combined with each other to form a ring.
  • the alkyl group is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 5 carbon atoms.
  • the alkyl group may be linear or branched.
  • the above-mentioned cycloalkyl group is preferably a cycloalkyl group having 3 to 12 carbon atoms, more preferably a cycloalkyl group having 3 to 8 carbon atoms.
  • the above cycloalkyl group may have a monocyclic structure or a polycyclic structure such as a condensed ring.
  • the above aryl group is preferably an aromatic hydrocarbon group having 6 to 30 carbon atoms, and more preferably a phenyl group.
  • the aralkyl group is preferably an aralkyl group having 7 to 20 carbon atoms, more preferably an aralkyl group having 7 to 16 carbon atoms.
  • the above aralkyl group is intended to be an aryl group substituted with an alkyl group, and the preferred embodiments of these alkyl groups and aryl groups are the same as the preferred embodiments of the alkyl group and aryl group described above.
  • the above alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms, more preferably an alkenyl group having 3 to 16 carbon atoms. These groups may further have known substituents.
  • Preferable examples of the group that decomposes under the action of an acid to produce an alkali-soluble group, or the group that leaves the group under the action of an acid include a tertiary alkyl ester group, an acetal group, a cumyl ester group, and an enol ester group. More preferred are tertiary alkyl ester groups and acetal groups.
  • the compound having at least one group selected from the group consisting of an acyloxymethyl group, a methylol group, an ethylol group, and an alkoxymethyl group may include at least one group selected from the group consisting of a urea bond and a urethane bond.
  • Compounds having the following are also preferred.
  • a preferred embodiment of the above compound is the above-mentioned crosslinked compound, except that the polymerizable group is not a radically polymerizable group but is at least one group selected from the group consisting of an acyloxymethyl group, a methylol group, an ethylol group, and an alkoxymethyl group. This is the same as the preferred embodiment of Agent U.
  • the compound containing at least one of an alkoxymethyl group and an acyloxymethyl group a commercially available compound may be used, or a compound synthesized by a known method may be used. From the viewpoint of heat resistance, compounds in which an alkoxymethyl group or an acyloxymethyl group is directly substituted on an aromatic ring or triazine ring are preferred.
  • melamine-based crosslinking agents include hexamethoxymethylmelamine, hexaethoxymethylmelamine, hexapropoxymethylmelamine, hexabutoxybutylmelamine, and the like.
  • urea-based crosslinking agents include monohydroxymethylated glycoluril, dihydroxymethylated glycoluril, trihydroxymethylated glycoluril, tetrahydroxymethylated glycoluril, monomethoxymethylated glycoluril, and dimethoxymethylated glycoluril.
  • uril trimethoxymethylated glycoluril, tetramethoxymethylated glycoluril, monoethoxymethylated glycoluril, diethoxymethylated glycoluril, triethoxymethylated glycoluril, tetraethoxymethylated glycoluril, monopropoxymethylated glycoluril , dipropoxymethylated glycoluril, tripropoxymethylated glycoluril, tetrapropoxymethylated glycoluril, monobutoxymethylated glycoluril, dibutoxymethylated glycoluril, tributoxymethylated glycoluril, or tetrabutoxymethylated glycoluril
  • Glycoluril crosslinking agents such as uril, Urea-based crosslinking agents such as bismethoxymethylurea, bisethoxymethylurea, bispropoxymethylurea, bisbutoxymethylurea, Monohydroxymethylated ethyleneurea or dihydroxymethylated ethyleneurea, monomethoxymethylated ethyleneurea, dimethoxymethylated
  • tetramethoxymethylated benzoguanamine monoethoxymethylated benzoguanamine, diethoxymethylated benzoguanamine, triethoxymethylated benzoguanamine, tetraethoxymethylated benzoguanamine, monopropoxymethylated benzoguanamine, dipropoxymethylated benzoguanamine, tripropoxymethylated benzoguanamine, tetra Examples include propoxymethylated benzoguanamine, monobutoxymethylated benzoguanamine, dibutoxymethylated benzoguanamine, tributoxymethylated benzoguanamine, and tetrabutoxymethylated benzoguanamine.
  • a compound having at least one group selected from the group consisting of a methylol group and an alkoxymethyl group at least one group selected from the group consisting of a methylol group and an alkoxymethyl group is added to an aromatic ring (preferably a benzene ring).
  • aromatic ring preferably a benzene ring
  • Compounds to which species groups are directly bonded are also preferably used. Specific examples of such compounds include benzenedimethanol, bis(hydroxymethyl)cresol, bis(hydroxymethyl)dimethoxybenzene, bis(hydroxymethyl)diphenyl ether, bis(hydroxymethyl)benzophenone, hydroxymethylphenyl hydroxymethylbenzoate.
  • the resin composition of the present invention contains at least one compound selected from the group consisting of an epoxy compound, an oxetane compound, and a benzoxazine compound as another crosslinking agent.
  • the epoxy compound contains a polyethylene oxide group. This further reduces the elastic modulus and suppresses warpage.
  • the polyethylene oxide group means one in which the number of ethylene oxide repeating units is 2 or more, and the number of repeating units is preferably 2 to 15.
  • epoxy compounds include bisphenol A type epoxy resin; bisphenol F type epoxy resin; propylene glycol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, butylene glycol diglycidyl ether, and hexamethylene glycol diglycidyl ether.
  • alkylene glycol type epoxy resin or polyhydric alcohol hydrocarbon type epoxy resin such as trimethylolpropane triglycidyl ether
  • polyalkylene glycol type epoxy resin such as polypropylene glycol diglycidyl ether
  • epoxy group such as polymethyl (glycidyloxypropyl) siloxane Examples include, but are not limited to, silicone containing silicone.
  • n is an integer of 1 to 5
  • m is an integer of 1 to 20.
  • n is preferably 1 to 2 and m is preferably 3 to 7 in order to achieve both heat resistance and elongation improvement.
  • Oxetane compounds include compounds having two or more oxetane rings in one molecule, 3-ethyl-3-hydroxymethyloxetane, 1,4-bis ⁇ [(3-ethyl-3-oxetanyl)methoxy]methyl ⁇ benzene, Examples include 3-ethyl-3-(2-ethylhexylmethyl)oxetane and 1,4-benzenedicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl]ester.
  • the Aronoxetane series (for example, OXT-121, OXT-221) manufactured by Toagosei Co., Ltd. can be suitably used, and these may be used alone or in combination of two or more. good.
  • the benzoxazine compound is preferable because it does not generate outgassing during curing due to the crosslinking reaction derived from the ring-opening addition reaction, and furthermore, it reduces thermal shrinkage and suppresses the occurrence of warpage.
  • benzoxazine compounds include P-d type benzoxazine, F-a type benzoxazine (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd.), benzoxazine adduct of polyhydroxystyrene resin, and phenol novolak type dihydrobenzo. Examples include oxazine compounds. These may be used alone or in combination of two or more.
  • the content of other crosslinking agents is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, and 0.5 to 15% by mass based on the total solid content of the resin composition. It is more preferably 1.0 to 10% by weight, particularly preferably 1.0 to 10% by weight. Only one type of other crosslinking agent may be contained, or two or more types thereof may be contained. When two or more types of other crosslinking agents are contained, it is preferable that the total amount is within the above range.
  • the resin composition of the present invention contains a polymerization initiator.
  • the polymerization initiator may be a thermal polymerization initiator or a photopolymerization initiator, but it is particularly preferable to include a photopolymerization initiator.
  • the photopolymerization initiator is preferably a radical photopolymerization initiator.
  • the radical photopolymerization initiator is not particularly limited and can be appropriately selected from known radical photopolymerization initiators. For example, a photoradical polymerization initiator that is sensitive to light in the ultraviolet to visible range is preferred. Alternatively, it may be an activator that acts with a photoexcited sensitizer to generate active radicals.
  • the photoradical polymerization initiator contains at least one compound having a molar absorption coefficient of at least about 50 L ⁇ mol ⁇ 1 ⁇ cm ⁇ 1 within the wavelength range of about 240 to 800 nm (preferably 330 to 500 nm). It is preferable.
  • the molar extinction coefficient of a compound can be measured using a known method. For example, it is preferable to measure at a concentration of 0.01 g/L using an ethyl acetate solvent with an ultraviolet-visible spectrophotometer (Cary-5 spectrophotometer manufactured by Varian).
  • any known compound can be used.
  • halogenated hydrocarbon derivatives e.g., compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.
  • acylphosphine compounds such as acylphosphine oxide, hexaarylbiimidazole, oxime derivatives, etc.
  • a hydroxyacetophenone compound, an aminoacetophenone compound, and an acylphosphine compound can be suitably used as the photoradical polymerization initiator. More specifically, for example, the aminoacetophenone-based initiator described in JP-A-10-291969 and the acylphosphine oxide-based initiator described in Japanese Patent No. 4225898 can be used, the content of which is herein incorporated by reference. Incorporated. Furthermore, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and the like can also be suitably used as the acylphosphine oxide. Further, as a commercially available acylphosphine oxide initiator, Omnirad TPO H and the like can be mentioned.
  • ⁇ -hydroxyketone initiators examples include Omnirad 184, Omnirad 1173, Omnirad 2959, Omnirad 127 (manufactured by IGM Resins B.V.), IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE -2959 and IRGACURE 127 (manufactured by BASF) can be used.
  • ⁇ -aminoketone initiators examples include Omnirad 907, Omnirad 369, Omnirad 369E, Omnirad 379EG (manufactured by IGM Resins B.V.), IRGACURE 907, and IRGACURE 3. 69, and IRGACURE 379 (manufactured by BASF) can be used.
  • aminoacetophenone initiator the acylphosphine oxide initiator, and the metallocene compound, for example, the compounds described in paragraphs 0161 to 0163 of International Publication No. 2021/112189 can also be suitably used. This content is incorporated herein.
  • photoradical polymerization initiator include oxime compounds.
  • an oxime compound By using an oxime compound, it becomes possible to improve exposure latitude more effectively.
  • Oxime compounds are particularly preferred because they have a wide exposure latitude (exposure margin) and also act as photocuring accelerators.
  • oxime compounds include compounds described in JP-A-2001-233842, compounds described in JP-A 2000-080068, compounds described in JP-A 2006-342166, J. C. S. Perkin II (1979, pp. 1653-1660); C. S. Perkin II (1979, pp. 156-162), Journal of Photopolymer Science and Technology (1995, pp. 202-232), JP-A-2000 - Compounds described in Publication No. 066385, Compounds described in Japanese Patent Publication No. 2004-534797, compounds described in Japanese Patent Application Publication No. 2017-019766, compounds described in Patent No. 6065596, compounds described in International Publication No. 2015/152153, International Publication No.
  • Preferred oxime compounds include, for example, compounds with the following structures, 3-(benzoyloxy(imino))butan-2-one, 3-(acetoxy(imino))butan-2-one, 3-(propionyloxy( imino))butan-2-one, 2-(acetoxy(imino))pentan-3-one, 2-(acetoxy(imino))-1-phenylpropan-1-one, 2-(benzoyloxy(imino)) -1-phenylpropan-1-one, 3-((4-toluenesulfonyloxy)imino)butan-2-one, and 2-(ethoxycarbonyloxy(imino))-1-phenylpropan-1-one, 5 -(4-isopropylphenylthio)-1,2-indanedione, 2-(O-acetyl)oxime and the like.
  • ADEKA Optomer N-1919 manufactured by ADEKA Co., Ltd., photoradical polymerization initiator 2 described in JP 2012-014052
  • TR-PBG-304 TR-PBG-305 (Changzhou Strong Electronic New Materials Co., Ltd.)
  • Adeka Arcles NCI-730, NCI-831, Adeka Arcles NCI-930 manufactured by ADEKA Co., Ltd.
  • DFI-091 manufactured by Daito Chemix Co., Ltd.
  • SpeedCure PDO manufactured by SARTOMER ARKEMA
  • oxime compounds having the following structures can also be used.
  • oxime compound OX an oxime compound having an aromatic ring group Ar OX1 (hereinafter also referred to as oxime compound OX) in which an electron-withdrawing group is introduced into the aromatic ring.
  • Examples of the electron-withdrawing group possessed by the aromatic ring group Ar OX1 include an acyl group, a nitro group, a trifluoromethyl group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, and a cyano group,
  • An acyl group and a nitro group are preferred, an acyl group is more preferred because a film with excellent light resistance can be easily formed, and a benzoyl group is even more preferred.
  • the benzoyl group may have a substituent.
  • substituents include halogen atoms, cyano groups, nitro groups, hydroxy groups, alkyl groups, alkoxy groups, aryl groups, aryloxy groups, heterocyclic groups, heterocyclic oxy groups, alkenyl groups, alkylsulfanyl groups, arylsulfanyl groups, It is preferably an acyl group or an amino group, and more preferably an alkyl group, an alkoxy group, an aryl group, an aryloxy group, a heterocyclicoxy group, an alkylsulfanyl group, an arylsulfanyl group, or an amino group. More preferably, it is a sulfanyl group or an amino group.
  • the oxime compound OX is preferably at least one selected from a compound represented by formula (OX1) and a compound represented by formula (OX2), and more preferably a compound represented by formula (OX2). preferable.
  • R X3 to R X14 each independently represent a hydrogen atom or a substituent. However, at least one of R X10 to R X14 is an electron-withdrawing group.
  • R X12 is preferably an electron-withdrawing group
  • R X10 , R X11 , R X13 , and R X14 are preferably hydrogen atoms.
  • oxime compound OX examples include compounds described in paragraph numbers 0083 to 0105 of Japanese Patent No. 4,600,600, the contents of which are incorporated herein.
  • Particularly preferable oxime compounds include oxime compounds having a specific substituent group as shown in JP-A No. 2007-269779, and oxime compounds having a thioaryl group as shown in JP-A No. 2009-191061. Incorporated herein.
  • photoradical polymerization initiators include trihalomethyltriazine compounds, benzyl dimethyl ketal compounds, ⁇ -hydroxyketone compounds, ⁇ -aminoketone compounds, acylphosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, and triaryl compounds. selected from the group consisting of imidazole dimers, onium salt compounds, benzothiazole compounds, benzophenone compounds, acetophenone compounds and derivatives thereof, cyclopentadiene-benzene-iron complexes and salts thereof, halomethyloxadiazole compounds, and 3-aryl substituted coumarin compounds.
  • Compounds such as
  • the photoradical polymerization initiator is a trihalomethyltriazine compound, an ⁇ -aminoketone compound, an acylphosphine compound, a phosphine oxide compound, a metallocene compound, an oxime compound, a triarylimidazole dimer, an onium salt compound, a benzophenone compound, an acetophenone compound, At least one compound selected from the group consisting of trihalomethyltriazine compounds, ⁇ -aminoketone compounds, metallocene compounds, oxime compounds, triarylimidazole dimers, and benzophenone compounds is more preferred, and metallocene compounds or oxime compounds are even more preferred.
  • a difunctional, trifunctional or more functional photoradical polymerization initiator may be used as the photoradical polymerization initiator.
  • a radical photopolymerization initiator two or more radicals are generated from one molecule of the radical photopolymerization initiator, so that good sensitivity can be obtained.
  • the crystallinity decreases and the solubility in solvents improves, making it difficult to precipitate over time, thereby improving the stability of the resin composition over time.
  • Specific examples of bifunctional or trifunctional or more functional photoradical polymerization initiators include those listed in Japanese Patent Publication No. 2010-527339, Japanese Patent Publication No. 2011-524436, International Publication No.
  • the resin composition contains a photopolymerization initiator
  • its content is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, and 0.5% by mass based on the total solid content of the resin composition. It is more preferably from 1.0 to 10% by weight, and even more preferably from 1.0 to 10% by weight.
  • the photopolymerization initiator may contain only one type, or may contain two or more types. When containing two or more types of photopolymerization initiators, it is preferable that the total amount is within the above range. Note that since the photopolymerization initiator may also function as a thermal polymerization initiator, crosslinking by the photopolymerization initiator may be further promoted by heating with an oven, a hot plate, or the like.
  • the resin composition may contain a sensitizer.
  • a sensitizer absorbs specific actinic radiation and becomes electronically excited.
  • the sensitizer in an electronically excited state comes into contact with a thermal radical polymerization initiator, a photoradical polymerization initiator, etc., and effects such as electron transfer, energy transfer, and heat generation occur.
  • the thermal radical polymerization initiator and the photo radical polymerization initiator undergo a chemical change and are decomposed to generate radicals, acids, or bases.
  • Usable sensitizers include benzophenone series, Michler's ketone series, coumarin series, pyrazole azo series, anilinoazo series, triphenylmethane series, anthraquinone series, anthracene series, anthrapyridone series, benzylidene series, oxonol series, and pyrazolotriazole azo series.
  • pyridone azo type cyanine type, phenothiazine type, pyrrolopyrazole azomethine type, xanthene type, phthalocyanine type, benzopyran type, indigo type, and other compounds can be used.
  • sensitizer examples include Michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal) Cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, p-dimethylaminocinnamyl Denindanone, p-dimethylaminobenzylideneindanone, 2-(p-dimethylaminophenylbiphenylene)-benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)iso Naphthothiazole, 1,3-
  • the content of the sensitizer is preferably 0.01 to 20% by mass, more preferably 0.1 to 15% by mass, based on the total solid content of the resin composition. More preferably 0.5 to 10% by mass.
  • the sensitizers may be used alone or in combination of two or more.
  • the resin composition of the present invention may contain a chain transfer agent.
  • Chain transfer agents are defined, for example, in the Polymer Dictionary, 3rd edition (edited by the Society of Polymer Science, 2005), pages 683-684.
  • Examples of chain transfer agents include compounds having -S-S-, -SO 2 -S-, -N-O-, SH, PH, SiH, and GeH in the molecule, and RAFT (Reversible Addition Fragmentation chain Transfer).
  • Dithiobenzoate, trithiocarbonate, dithiocarbamate, xanthate compounds and the like having a thiocarbonylthio group used in polymerization are used. These can generate radicals by donating hydrogen to low-activity radicals, or can generate radicals by being oxidized and then deprotonated.
  • thiol compounds can be preferably used.
  • the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, and 0.1 to 10 parts by mass based on 100 parts by mass of the total solid content of the resin composition. More preferably, 0.5 to 5 parts by mass is even more preferred.
  • the number of chain transfer agents may be one, or two or more. When there are two or more types of chain transfer agents, it is preferable that the total is within the above range.
  • the resin composition of the present invention may also contain a base generator.
  • the base generator is a compound that can generate a base by physical or chemical action.
  • Preferred base generators include thermal base generators and photobase generators.
  • the resin composition contains a thermal base generator, the cyclization reaction of the precursor can be promoted by heating, for example, and the cured product has good mechanical properties and chemical resistance. The performance as an interlayer insulating film for wiring layers is improved.
  • the base generator may be an ionic base generator or a nonionic base generator. Examples of the base generated from the base generator include secondary amines and tertiary amines.
  • the base generator is not particularly limited, and any known base generator can be used.
  • Known base generators include, for example, carbamoyloxime compounds, carbamoylhydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzyl carbamate compounds, nitrobenzyl carbamate compounds, sulfonamide compounds, imidazole derivative compounds, and amine imides. compounds, pyridine derivative compounds, ⁇ -aminoacetophenone derivative compounds, quaternary ammonium salt derivative compounds, iminium salts, pyridinium salts, ⁇ -lactone ring derivative compounds, amine imide compounds, phthalimide derivative compounds, acyloxyimino compounds, and the like.
  • nonionic base generators examples include compounds represented by formula (B1) or formula (B2) described in paragraphs 0275 to 0285 of International Publication No. 2021/112189, and International Publication No. 2020/066416.
  • the compound represented by formula (N1) described in paragraphs 0102 to 00162 or the base generator is preferably a thermal base generator described in paragraphs 0013 to 0041 of WO 2020/054226. Their contents are incorporated herein.
  • Examples of the base generator include, but are not limited to, the following compounds.
  • the molecular weight of the nonionic base generator is preferably 800 or less, more preferably 600 or less, and even more preferably 500 or less.
  • the lower limit is preferably 100 or more, more preferably 200 or more, and even more preferably 300 or more.
  • Specific preferred compounds of the ionic base generator include, for example, the compounds described in paragraph numbers 0148 to 0163 of International Publication No. 2018/038002.
  • ammonium salts include, but are not limited to, the following compounds.
  • iminium salts include, but are not limited to, the following compounds.
  • the content of the base generator is preferably 0.1 to 50 parts by weight based on 100 parts by weight of the resin in the resin composition.
  • the lower limit is more preferably 0.3 parts by mass or more, and even more preferably 0.5 parts by mass or more.
  • the upper limit is more preferably 30 parts by mass or less, even more preferably 20 parts by mass or less, even more preferably 10 parts by mass or less, even more preferably 5 parts by mass or less, and particularly preferably 4 parts by mass or less.
  • One type or two or more types of base generators can be used. When two or more types are used, the total amount is preferably within the above range.
  • the resin composition of the present invention preferably contains a solvent. Any known solvent can be used as the solvent.
  • the solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.
  • esters include ethyl acetate, n-butyl acetate, isobutyl acetate, hexyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, ⁇ -butyrolactone.
  • alkyloxyacetate e.g., methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (e.g., methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, 3-alkyloxypropionate alkyl esters (e.g., methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate, etc.), 3-alkyloxypropionate alkyl esters (e.g., methyl 3-methoxypropionate, 3-methoxypropionate), ethyl, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), 2-alkyloxypropionate alkyl esters (e.g., methyl 2-alkyloxypropionate, ethyl), 2-alkyloxypropionate alkyl esters (e.g
  • ethers include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, Methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol Suitable examples include monobutyl ether acetate
  • Suitable ketones include, for example, methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, 3-methylcyclohexanone, levoglucosenone, dihydrolevoglucosenone, and the like.
  • Suitable examples of cyclic hydrocarbons include aromatic hydrocarbons such as toluene, xylene, and anisole, and cyclic terpenes such as limonene.
  • Suitable examples of sulfoxides include dimethyl sulfoxide.
  • Amides include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-dimethylisobutyramide, Preferred examples include 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, N-formylmorpholine, and N-acetylmorpholine.
  • Suitable ureas include N,N,N',N'-tetramethylurea, 1,3-dimethyl-2-imidazolidinone, and the like.
  • Alcohols include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 1-pentanol, 1-hexanol, benzyl alcohol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, 2-ethoxyethanol, Diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, Examples include ethylene glycol monophenyl ether, methylphenyl carbinol, n-amyl alcohol, methyl amyl alcohol, and diacetone alcohol.
  • the content of the solvent is preferably such that the total solids concentration of the resin composition of the present invention is 5 to 80% by mass, and preferably 5 to 75% by mass. More preferably, the amount is 10 to 70% by mass, and even more preferably 20 to 70% by mass.
  • the solvent content may be adjusted depending on the desired thickness of the coating and the application method. When two or more types of solvents are contained, it is preferable that the total amount is within the above range.
  • the resin composition of the present invention preferably contains a metal adhesion improver from the viewpoint of improving adhesion to metal materials used for electrodes, wiring, etc.
  • metal adhesion improvers include silane coupling agents having alkoxysilyl groups, aluminum adhesion aids, titanium adhesion aids, compounds having a sulfonamide structure and thiourea structure, phosphoric acid derivative compounds, and ⁇ -keto esters. compounds, amino compounds, etc.
  • silane coupling agent examples include the compounds described in paragraph 0316 of International Publication No. 2021/112189 and the compounds described in paragraphs 0067 to 0078 of JP 2018-173573, the contents of which are not included herein. Incorporated. It is also preferable to use two or more different silane coupling agents as described in paragraphs 0050 to 0058 of JP-A-2011-128358. It is also preferable to use the following compounds as the silane coupling agent. In the following formula, Me represents a methyl group and Et represents an ethyl group.
  • silane coupling agents examples include vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, and 3-glycidoxypropylmethyldimethoxysilane.
  • Aluminum-based adhesion aid examples include aluminum tris (ethyl acetoacetate), aluminum tris (acetylacetonate), ethylacetoacetate aluminum diisopropylate, and the like.
  • the content of the metal adhesion improver is preferably 0.01 to 30 parts by weight, more preferably 0.1 to 10 parts by weight, and even more preferably 0.5 to 5 parts by weight, based on 100 parts by weight of the specific resin.
  • the content of the metal adhesion improver is preferably 0.01 to 30 parts by weight, more preferably 0.1 to 10 parts by weight, and even more preferably 0.5 to 5 parts by weight, based on 100 parts by weight of the specific resin.
  • the resin composition of the present invention further contains a migration inhibitor.
  • a migration inhibitor for example, when a resin composition is applied to a metal layer (or metal wiring) to form a film, metal ions derived from the metal layer (or metal wiring) may migrate into the film. can be effectively suppressed.
  • Migration inhibitors are not particularly limited, but include heterocycles (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring, 6H-pyran ring, triazine ring), compounds having thioureas and sulfanyl groups, hindered phenol compounds , salicylic acid derivative compounds, and hydrazide derivative compounds.
  • heterocycles pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring
  • triazole compounds such as 1,2,4-triazole, benzotriazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 1H-tetrazole, 5- Tetrazole compounds such as phenyltetrazole and 5-amino-1H-tetrazole can be preferably used.
  • an ion trapping agent that traps anions such as halogen ions can also be used.
  • Other migration inhibitors include, for example, the rust inhibitors described in paragraph 0094 of JP-A No. 2013-015701, and the rust inhibitors described in paragraphs 0073 to 0076 of JP-A-2009-283711.
  • migration inhibitors include the following compounds.
  • the content of the migration inhibitor is preferably 0.01 to 5.0% by mass, and 0.01 to 5.0% by mass based on the total solid content of the resin composition.
  • the amount is more preferably 0.05 to 2.0% by weight, and even more preferably 0.1 to 1.0% by weight.
  • Only one type of migration inhibitor may be used, or two or more types may be used. When there are two or more types of migration inhibitors, it is preferable that the total is within the above range.
  • the resin composition of the present invention contains a polymerization inhibitor.
  • the polymerization inhibitor include phenolic compounds, quinone compounds, amino compounds, N-oxyl free radical compounds, nitro compounds, nitroso compounds, heteroaromatic compounds, and metal compounds.
  • Specific compounds of the polymerization inhibitor include the compound described in paragraph 0310 of International Publication No. 2021/112189, p-hydroquinone, o-hydroquinone, 4-hydroxy-2,2,6,6-tetramethylpiperidine 1- Examples include oxyl free radical and phenoxazine. This content is incorporated herein.
  • the content of the polymerization inhibitor is preferably 0.01 to 20% by mass, and 0.02 to 20% by mass based on the total solid content of the resin composition. It is more preferably 15% by mass, and even more preferably 0.05 to 10% by mass.
  • Only one type of polymerization inhibitor may be used, or two or more types may be used. When there are two or more types of polymerization inhibitors, it is preferable that the total is within the above range.
  • the resin composition of the present invention may optionally contain various additives, such as surfactants, higher fatty acid derivatives, thermal polymerization initiators, inorganic particles, ultraviolet absorbers, etc., as long as the effects of the present invention can be obtained. It may contain organic titanium compounds, antioxidants, anti-aggregation agents, phenolic compounds, other polymer compounds, plasticizers, and other auxiliary agents (for example, antifoaming agents, flame retardants, etc.). By appropriately containing these components, properties such as film physical properties can be adjusted. These components are described, for example, in paragraphs 0183 and after of JP-A-2012-003225 (corresponding paragraph 0237 of U.S. Patent Application Publication No.
  • surfactant various surfactants such as fluorine surfactants, silicone surfactants, and hydrocarbon surfactants can be used.
  • the surfactant may be a nonionic surfactant, a cationic surfactant, or an anionic surfactant.
  • the liquid properties (especially fluidity) when preparing a coating liquid composition are further improved, and the uniformity of coating thickness and liquid saving are further improved. can do. That is, when forming a film using a coating solution containing a surfactant, the interfacial tension between the surface to be coated and the coating solution is reduced, improving the wettability of the surface to be coated, and making it easier to coat the surface. Improves sex. Therefore, a uniform film with small thickness unevenness can be more suitably formed.
  • fluorine-based surfactant examples include compounds described in paragraph 0328 of International Publication No. 2021/112189, the content of which is incorporated herein.
  • a repeating unit derived from a (meth)acrylate compound having a fluorine atom and a (meth) having 2 or more (preferably 5 or more) alkyleneoxy groups (preferably ethyleneoxy group, propyleneoxy group) are used.
  • a fluorine-containing polymer compound containing a repeating unit derived from an acrylate compound can also be preferably used, and examples thereof include the following compounds.
  • the weight average molecular weight of the above compound is preferably 3,000 to 50,000, more preferably 5,000 to 30,000.
  • a fluorine-based surfactant a fluorine-containing polymer having an ethylenically unsaturated bond in its side chain can also be used as the fluorine-based surfactant.
  • Specific examples include compounds described in paragraphs 0050 to 0090 and paragraphs 0289 to 0295 of JP-A-2010-164965, the contents of which are incorporated herein.
  • Commercially available products include, for example, Megafac RS-101, RS-102, and RS-718K manufactured by DIC Corporation.
  • the fluorine content in the fluorine surfactant is preferably 3 to 40% by mass, more preferably 5 to 30% by mass, and particularly preferably 7 to 25% by mass.
  • a fluorine-based surfactant having a fluorine content within this range is effective in terms of uniformity of coating film thickness and liquid saving, and has good solubility in the composition.
  • Silicone surfactants, hydrocarbon surfactants, nonionic surfactants, cationic surfactants, and anionic surfactants are each described in paragraphs 0329 to 0334 of International Publication No. 2021/112189. compounds, the contents of which are incorporated herein.
  • the content of the surfactant is preferably 0.001 to 2.0% by mass, more preferably 0.005 to 1.0% by mass, based on the total solid content of the composition.
  • Higher fatty acid derivative In order to prevent polymerization inhibition caused by oxygen, higher fatty acid derivatives such as behenic acid and behenic acid amide are added to the resin composition of the present invention during the drying process after application. It may be unevenly distributed on the surface.
  • the content of the higher fatty acid derivative is preferably 0.1 to 10% by mass based on the total solid content of the resin composition.
  • thermal radical polymerization initiator examples include compounds described in paragraphs 0074 to 0118 of JP-A No. 2008-063554, the contents of which are incorporated herein.
  • thermal polymerization initiator When a thermal polymerization initiator is included, its content is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, based on the total solid content of the resin composition. More preferably, the amount is .5 to 15% by mass.
  • the thermal polymerization initiator may contain only one type, or may contain two or more types. When containing two or more types of thermal polymerization initiators, it is preferable that the total amount is within the above range.
  • inorganic particles include calcium carbonate, calcium phosphate, silica, kaolin, talc, titanium dioxide, alumina, barium sulfate, calcium fluoride, lithium fluoride, zeolite, molybdenum sulfide, and glass.
  • the average particle diameter of the inorganic particles is preferably 0.01 to 2.0 ⁇ m, more preferably 0.02 to 1.5 ⁇ m, even more preferably 0.03 to 1.0 ⁇ m, and particularly preferably 0.04 to 0.5 ⁇ m. .
  • the above average particle diameter of the inorganic particles is a primary particle diameter and a volume average particle diameter.
  • the volume average particle diameter can be measured, for example, by a dynamic light scattering method using Nanotrac WAVE II EX-150 (manufactured by Nikkiso Co., Ltd.). If the above measurement is difficult, measurement can also be performed by centrifugal sedimentation light transmission method, X-ray transmission method, or laser diffraction/scattering method.
  • UV absorber examples include salicylate-based, benzophenone-based, benzotriazole-based, substituted acrylonitrile-based, and triazine-based ultraviolet absorbers.
  • Specific examples of ultraviolet absorbers include compounds described in paragraphs 0341 to 0342 of International Publication No. 2021/112189, the contents of which are incorporated herein.
  • One type of ultraviolet absorber may be used alone, or two or more types may be used in combination.
  • the content of the ultraviolet absorber is preferably 0.001% by mass or more and 1% by mass or less, and 0.01% by mass or less, based on the total solid mass of the resin composition. More preferably, the amount is 0.1% by mass or more and 0.1% by mass or less.
  • organic titanium compounds examples include those in which an organic group is bonded to a titanium atom via a covalent bond or an ionic bond. Specific examples of organic titanium compounds are shown in I) to VII) below:
  • I) Titanium chelate compound A titanium chelate compound having two or more alkoxy groups is more preferred because the resin composition has good storage stability and a good curing pattern can be obtained. Specific examples include titanium bis(triethanolamine) diisopropoxide, titanium di(n-butoxide) bis(2,4-pentanedionate), titanium diisopropoxide bis(2,4-pentanedionate).
  • Tetraalkoxytitanium compounds for example, titanium tetra(n-butoxide), titanium tetraethoxide, titanium tetra(2-ethylhexoxide), titanium tetraisobutoxide, titanium tetraisopropoxide, titanium tetramethoxide , titanium tetramethoxypropoxide, titanium tetramethyl phenoxide, titanium tetra(n-nonyloxide), titanium tetra(n-propoxide), titanium tetrastearyloxide, titanium tetrakis[bis ⁇ 2,2-(allyloxymethyl)] butoxide ⁇ ], etc.
  • Titanocene compounds for example, pentamethylcyclopentadienyl titanium trimethoxide, bis( ⁇ 5-2,4-cyclopentadien-1-yl)bis(2,6-difluorophenyl)titanium, bis( ⁇ 5-2, 4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium and the like.
  • Monoalkoxytitanium compounds For example, titanium tris(dioctyl phosphate) isopropoxide, titanium tris(dodecylbenzenesulfonate) isopropoxide, and the like.
  • Titanium oxide compound For example, titanium oxide bis(pentanedionate), titanium oxide bis(tetramethylheptanedionate), phthalocyanine titanium oxide, etc.
  • the organic titanium compound is at least one compound selected from the group consisting of the above I) titanium chelate compounds, II) tetraalkoxytitanium compounds, and III) titanocene compounds. It is preferable that there be.
  • titanium diisopropoxide bis(ethylacetoacetate), titanium tetra(n-butoxide), and bis( ⁇ 5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H -pyrrol-1-yl)phenyl)titanium is preferred.
  • an organic titanium compound When an organic titanium compound is included, its content is preferably 0.05 to 10 parts by mass, more preferably 0.1 to 2 parts by mass, based on 100 parts by mass of the specific resin. When the content is 0.05 parts by mass or more, the resulting cured pattern has better heat resistance and chemical resistance, and when the content is 10 parts by mass or less, the storage stability of the composition is better.
  • antioxidants include phenol compounds, phosphite compounds, thioether compounds, and the like. Specific examples of antioxidants include compounds described in paragraphs 0348 to 0357 of International Publication No. 2021/112189, the contents of which are incorporated herein.
  • the content of the antioxidant is preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the specific resin.
  • the addition amount is preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the specific resin.
  • anti-aggregation agents examples include sodium polyacrylate.
  • the anti-aggregation agents may be used alone or in combination of two or more.
  • the content of the anti-aggregation agent is preferably 0.01% by mass or more and 10% by mass or less, and 0.02% by mass or less, based on the total solid mass of the resin composition. It is more preferable that the amount is 5% by mass or more and 5% by mass or less.
  • One type of phenol compound may be used alone, or two or more types may be used in combination.
  • the content of the phenolic compound is preferably 0.01% by mass or more and 30% by mass or less, and 0.02% by mass or less, based on the total solid mass of the resin composition. It is more preferable that the amount is from % by mass to 20% by mass.
  • polymeric compounds include siloxane resins, (meth)acrylic polymers copolymerized with (meth)acrylic acid, novolac resins, resol resins, polyhydroxystyrene resins, and copolymers thereof.
  • Other polymer compounds may be modified products into which crosslinking groups such as methylol groups, alkoxymethyl groups, and epoxy groups are introduced.
  • the other polymer compounds may be used alone or in combination of two or more.
  • the content of the other polymer compounds is preferably 0.01% by mass or more and 30% by mass or less based on the total solid mass of the resin composition. , more preferably 0.02% by mass or more and 20% by mass or less.
  • the viscosity of the resin composition of the present invention can be adjusted by adjusting the solid content concentration of the resin composition. From the viewpoint of coating film thickness, it is preferably 1,000 mm 2 /s to 12,000 mm 2 /s, more preferably 2,000 mm 2 /s to 10,000 mm 2 /s, and 2,500 mm 2 /s to 8,000 mm. 2 /s is more preferable. Within the above range, it becomes easy to obtain a coating film with high uniformity.
  • the water content of the resin composition of the present invention is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If it is less than 2.0%, the storage stability of the resin composition will improve.
  • Methods for maintaining the moisture content include adjusting the humidity during storage conditions and reducing the porosity of the storage container during storage.
  • the metal content of the resin composition of the present invention is preferably less than 5 mass ppm (parts per million), more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm, from the viewpoint of insulation.
  • metals include sodium, potassium, magnesium, calcium, iron, copper, chromium, and nickel, but metals included as complexes of organic compounds and metals are excluded. When a plurality of metals are included, the total of these metals is preferably within the above range.
  • a method for reducing metal impurities that is unintentionally included in the resin composition of the present invention is to select a raw material with a low metal content as a raw material constituting the resin composition of the present invention.
  • Methods include filtering the raw materials constituting the product, lining the inside of the apparatus with polytetrafluoroethylene, etc., and performing distillation under conditions that suppress contamination as much as possible.
  • the resin composition of the present invention has a halogen atom content of preferably less than 500 mass ppm, more preferably less than 300 mass ppm, and more preferably less than 200 mass ppm from the viewpoint of wiring corrosion. is even more preferable.
  • those present in the form of halogen ions are preferably less than 5 ppm by mass, more preferably less than 1 ppm by mass, and even more preferably less than 0.5 ppm by mass.
  • the halogen atom include a chlorine atom and a bromine atom. It is preferable that the total of chlorine atoms and bromine atoms, or the total of chlorine ions and bromine ions, is each within the above range.
  • Preferred methods for adjusting the content of halogen atoms include ion exchange treatment.
  • the storage container may be a multilayer bottle whose inner wall is made of 6 types of 6 layers of resin, or a container with 7 layers of 6 types of resin. It is also preferred to use structured bottles. Examples of such a container include the container described in JP-A No. 2015-123351.
  • a cured product of the resin composition By curing the resin composition of the present invention, a cured product of the resin composition can be obtained.
  • the cured product of the present invention is a cured product obtained by curing a resin composition.
  • the resin composition is preferably cured by heating, and the heating temperature is more preferably 120°C to 400°C, even more preferably 140°C to 380°C, and particularly preferably 170°C to 350°C.
  • the form of the cured product of the resin composition is not particularly limited, and can be selected depending on the purpose, such as film, rod, sphere, or pellet form. In the present invention, the cured product is preferably in the form of a film.
  • the thickness of the cured product is preferably 0.5 ⁇ m or more and 150 ⁇ m or less.
  • the shrinkage rate when the resin composition of the present invention is cured is preferably 50% or less, more preferably 45% or less, and even more preferably 40% or less.
  • the imidization reaction rate of the cured product of the resin composition of the present invention is preferably 70% or more, more preferably 80% or more, and still more preferably 90% or more. If it is 70% or more, the cured product may have excellent mechanical properties.
  • the elongation at break of the cured product of the resin composition of the present invention is preferably 30% or more, more preferably 40% or more, and even more preferably 50% or more.
  • the glass transition temperature (Tg) of the cured product of the resin composition of the present invention is preferably 180°C or higher, more preferably 210°C or higher, and even more preferably 230°C or higher.
  • the resin composition of the present invention can be prepared by mixing the above components.
  • the mixing method is not particularly limited and can be performed by a conventionally known method. Examples of the mixing method include mixing using a stirring blade, mixing using a ball mill, and mixing using a rotating tank.
  • the temperature during mixing is preferably 10 to 30°C, more preferably 15 to 25°C.
  • the filter pore diameter is, for example, preferably 5 ⁇ m or less, more preferably 1 ⁇ m or less, even more preferably 0.5 ⁇ m or less, and even more preferably 0.1 ⁇ m or less.
  • the material of the filter is preferably polytetrafluoroethylene, polyethylene or nylon. When the material of the filter is polyethylene, it is more preferably HDPE (high density polyethylene).
  • the filter may be washed in advance with an organic solvent. In the filter filtration step, a plurality of types of filters may be connected in series or in parallel. When using multiple types of filters, filters with different pore sizes or materials may be used in combination.
  • connection mode examples include a mode in which an HDPE filter with a pore diameter of 1 ⁇ m is connected in series as the first stage and an HDPE filter with a pore diameter of 0.2 ⁇ m as the second stage. Additionally, various materials may be filtered multiple times. When filtration is performed multiple times, circulation filtration may be used. Alternatively, filtration may be performed under pressure.
  • the pressure to be applied is preferably, for example, 0.01 MPa or more and 1.0 MPa or less, more preferably 0.03 MPa or more and 0.9 MPa or less, still more preferably 0.05 MPa or more and 0.7 MPa or less, and 0.01 MPa or more and 0.9 MPa or less, still more preferably 0.05 MPa or more and 0.7 MPa or less, and 0.01 MPa or more and 0.9 MPa or less, for example. Even more preferably 0.05 MPa or more and 0.5 MPa or less.
  • impurity removal treatment using an adsorbent may be performed. Filter filtration and impurity removal treatment using an adsorbent may be combined.
  • a known adsorbent can be used. Examples include inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon. After filtration using a filter, the resin composition filled in the bottle may be placed under reduced pressure and degassed.
  • the method for producing a cured product of the present invention preferably includes a film forming step of applying the resin composition onto a base material to form a film.
  • the method for producing a cured product includes the above film forming step, an exposure step of selectively exposing the film formed in the film forming step, and developing the film exposed in the exposure step using a developer to form a pattern. It is more preferable to include a developing step.
  • the method for producing a cured product includes the film formation step, the exposure step, the development step, a heating step of heating the pattern obtained in the development step, and a post-development exposure step of exposing the pattern obtained in the development step. It is particularly preferable to include at least one of them.
  • the method for producing a cured product includes the above-mentioned film forming step and the step of heating the above-mentioned film. The details of each step will be explained below.
  • the resin composition of the present invention can be used in a film forming step in which a film is formed by applying it on a substrate.
  • the method for producing a cured product of the present invention preferably includes a film forming step of applying the resin composition onto a base material to form a film.
  • the type of base material can be appropriately determined depending on the purpose and is not particularly limited.
  • the base material include semiconductor manufacturing base materials such as silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon, quartz, glass, optical films, ceramic materials, vapor deposited films, magnetic films, reflective films, Ni, Cu,
  • a metal base material such as Cr or Fe (for example, a base material formed from a metal or a base material on which a metal layer is formed by, for example, plating or vapor deposition), paper, SOG (Spin On Examples include glass), TFT (thin film transistor) array substrates, mold substrates, and electrode plates for plasma display panels (PDP).
  • the base material is particularly preferably a semiconductor production base material, and more preferably a silicon base material, a Cu base material, and a mold base material. These base materials may be provided with a layer such as an adhesive layer or an oxidized layer made of hexamethyldisilazane (HMDS) or the like on the surface.
  • the shape of the base material is not particularly limited, and may be circular or rectangular. As for the size of the base material, if it is circular, the diameter is preferably 100 to 450 mm, more preferably 200 to 450 mm. If it is rectangular, the length of the short side is preferably 100 to 1000 mm, more preferably 200 to 700 mm.
  • a plate-shaped, preferably panel-shaped base material (substrate) is used as the base material.
  • the resin layer or metal layer serves as the base material.
  • Coating is preferred as a means for applying the resin composition onto the substrate.
  • the methods to be applied include dip coating method, air knife coating method, curtain coating method, wire bar coating method, gravure coating method, extrusion coating method, spray coating method, spin coating method, slit coating method, Examples include the inkjet method. From the viewpoint of uniformity of film thickness, spin coating method, slit coating method, spray coating method, or inkjet method is preferable, and from the viewpoint of uniformity of film thickness and productivity, spin coating method and slit coating method are preferable. A coating method is more preferred. A film with a desired thickness can be obtained by adjusting the solid content concentration and application conditions of the resin composition depending on the means to be applied.
  • the coating method can be appropriately selected depending on the shape of the substrate, and for circular substrates such as wafers, spin coating, spray coating, inkjet methods, etc. are preferable, and for rectangular substrates, slit coating, spray coating, etc. method, inkjet method, etc. are preferred.
  • spin coating it can be applied, for example, at a rotation speed of 500 to 3,500 rpm for about 10 seconds to 3 minutes. It is also possible to apply a method in which a coating film that has been previously formed on a temporary support by the above-mentioned application method is transferred onto a base material.
  • the transfer method the production method described in paragraphs 0023, 0036 to 0051 of JP-A No.
  • 2006-023696 and paragraphs 0096 to 0108 of JP-A No. 2006-047592 can be suitably used. Further, a step of removing excess film may be performed at the end of the base material. Examples of such processes include edge bead rinsing (EBR), back rinsing, and the like.
  • EBR edge bead rinsing
  • a pre-wet process may be employed in which various solvents are applied to the base material before the resin composition is applied to the base material to improve the wettability of the base material, and then the resin composition is applied.
  • the film may be subjected to a step of drying the formed film (layer) (drying step) in order to remove the solvent.
  • the method for producing a cured product of the present invention may include a drying step of drying the film formed in the film forming step.
  • the drying step is preferably performed after the film forming step and before the exposure step.
  • the drying temperature of the membrane in the drying step is preferably from 50 to 150°C, more preferably from 70°C to 130°C, even more preferably from 90°C to 110°C.
  • drying may be performed under reduced pressure.
  • the drying time is exemplified by 30 seconds to 20 minutes, preferably 1 minute to 10 minutes, and more preferably 2 minutes to 7 minutes.
  • the film may be subjected to an exposure process that selectively exposes the film.
  • the method for producing a cured product may include an exposure step of selectively exposing the film formed in the film forming step. Selectively exposing means exposing a portion of the film. Furthermore, by selectively exposing the film, an exposed area (exposed area) and an unexposed area (unexposed area) are formed in the film.
  • the exposure amount is not particularly limited as long as it can cure the resin composition of the present invention, but for example, it is preferably 50 to 10,000 mJ/cm 2 and more preferably 200 to 8,000 mJ/cm 2 in terms of exposure energy at a wavelength of 365 nm. preferable.
  • the exposure wavelength can be appropriately determined in the range of 190 to 1,000 nm, preferably 240 to 550 nm.
  • the exposure wavelength is: (1) semiconductor laser (wavelength: 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355 nm, etc.), (2) metal halide lamp, (3) high pressure mercury lamp, G-line (wavelength) 436 nm), h line (wavelength 405 nm), i line (wavelength 365 nm), broad (three wavelengths of g, h, i line), (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm) ), F2 excimer laser (wavelength 157 nm), (5) extreme ultraviolet light; EUV (wavelength 13.6 nm), (6) electron beam, (7) YAG laser second harmonic 532 nm, third harmonic 355 nm, etc.
  • semiconductor laser wavelength: 830 nm, 532 nm, 488 nm, 405 nm, 375 nm,
  • the resin composition of the present invention exposure using a high-pressure mercury lamp is particularly preferred, and from the viewpoint of exposure sensitivity, exposure using i-line is more preferred.
  • the method of exposure is not particularly limited, and may be any method as long as at least a portion of the film made of the resin composition of the present invention is exposed to light, and examples thereof include exposure using a photomask, exposure using a laser direct imaging method, etc. .
  • the film may be subjected to a heating step after exposure (post-exposure heating step). That is, the method for producing a cured product of the present invention may include a post-exposure heating step of heating the film exposed in the exposure step.
  • the post-exposure heating step can be performed after the exposure step and before the development step.
  • the heating temperature in the post-exposure heating step is preferably 50°C to 140°C, more preferably 60°C to 120°C.
  • the heating time in the post-exposure heating step is preferably 30 seconds to 300 minutes, more preferably 1 minute to 10 minutes.
  • the temperature increase rate in the post-exposure heating step is preferably 1 to 12°C/min, more preferably 2 to 10°C/min, and even more preferably 3 to 10°C/min, from the temperature at the start of heating to the maximum heating temperature. Further, the temperature increase rate may be changed as appropriate during heating.
  • the heating means in the post-exposure heating step is not particularly limited, and a known hot plate, oven, infrared heater, etc. can be used. Further, during heating, it is also preferable to conduct the heating in an atmosphere with a low oxygen concentration, such as by flowing an inert gas such as nitrogen, helium, or argon.
  • the film after exposure may be subjected to a development step of developing a pattern using a developer.
  • the method for producing a cured product of the present invention may include a development step of developing the film exposed in the exposure step using a developer to form a pattern. By performing development, one of the exposed and non-exposed areas of the film is removed and a pattern is formed.
  • development in which the non-exposed portions of the film are removed in the developing step is referred to as negative development
  • development in which the exposed portions of the film are removed in the development step is referred to as positive development.
  • Examples of the developer used in the development step include an alkaline aqueous solution or a developer containing an organic solvent.
  • basic compounds that the alkaline aqueous solution may contain include inorganic alkalis, primary amines, secondary amines, tertiary amines, and quaternary ammonium salts.
  • TMAH tetramethylammonium hydroxide
  • potassium hydroxide sodium carbonate, sodium hydroxide, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-butylamine, triethylamine, methyldiethylamine , dimethylethanolamine, triethanolamine, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, tetrahexylammonium hydroxide, tetraoctylammonium hydroxide, ethyltrimethylammonium hydroxide, Butyltrimethylammonium hydroxide, methyltriamylammonium hydroxide, dibutyldipentylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammoni
  • the compound described in paragraph 0387 of International Publication No. 2021/112189 can be used as the organic solvent.
  • alcohols include methanol, ethanol, propanol, isopropanol, butanol, pentanol, octanol, diethylene glycol, propylene glycol, methylisobutylcarbinol, triethylene glycol, etc.
  • Amides include N-methylpyrrolidone, N-ethylpyrrolidone, Dimethylformamide and the like are also suitable.
  • the developer contains an organic solvent
  • one type of organic solvent or a mixture of two or more types can be used.
  • a developer containing at least one member selected from the group consisting of cyclopentanone, ⁇ -butyrolactone, dimethyl sulfoxide, N-methyl-2-pyrrolidone, and cyclohexanone is particularly preferred.
  • a developer containing at least one selected from the group consisting of and dimethyl sulfoxide is more preferred, and a developer containing cyclopentanone is particularly preferred.
  • the content of the organic solvent relative to the total mass of the developer is preferably 50% by mass or more, more preferably 70% by mass or more, and 80% by mass or more. is more preferable, and particularly preferably 90% by mass or more. Moreover, the said content may be 100 mass %.
  • the developer may further contain at least one of a basic compound and a base generator.
  • the developer may further contain at least one of the basic compound and the base generator in the developer permeates into the pattern, performance such as elongation at break of the pattern may be improved.
  • an organic base is preferable from the viewpoint of reliability when remaining in the cured film (adhesion to the substrate when the cured product is further heated).
  • a basic compound having an amino group is preferable, and primary amines, secondary amines, tertiary amines, ammonium salts, tertiary amides, etc.
  • a primary amine, a secondary amine, a tertiary amine or an ammonium salt is preferred, a secondary amine, a tertiary amine or an ammonium salt is more preferred, a secondary amine or a tertiary amine is even more preferred, and a tertiary amine is particularly preferred.
  • the basic compound is preferably one that does not easily remain in the cured film (obtained cured product), and from the viewpoint of promoting cyclization, it can be used by vaporization etc. It is preferable that the amount remaining is not likely to decrease before heating.
  • the boiling point of the basic compound is preferably 30°C to 350°C, more preferably 80°C to 270°C, and even more preferably 100°C to 230°C at normal pressure (101,325 Pa).
  • the boiling point of the basic compound is preferably higher than the boiling point of the organic solvent contained in the developer minus 20°C, and more preferably higher than the boiling point of the organic solvent contained in the developer.
  • the basic compound used preferably has a boiling point of 80°C or higher, more preferably 100°C or higher.
  • the developer may contain only one type of basic compound, or may contain two or more types of basic compounds.
  • basic compounds include ethanolamine, diethanolamine, triethanolamine, ethylamine, diethylamine, triethylamine, hexylamine, dodecylamine, cyclohexylamine, cyclohexylmethylamine, cyclohexyldimethylamine, aniline, N-methylaniline, N, N-dimethylaniline, diphenylamine, pyridine, butylamine, isobutylamine, dibutylamine, tributylamine, dicyclohexylamine, DBU (diazabicycloundecene), DABCO (1,4-diazabicyclo[2.2.2]octane), N , N-diisopropylethylamine, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, ethylenediamine, butanediamine, 1,5-diaminopentane, N-methylhexy
  • the preferred embodiments of the base generator are the same as the preferred embodiments of the base generator contained in the above-mentioned composition.
  • the base generator is preferably a thermal base generator.
  • the content of the basic compound or base generator is preferably 10% by mass or less, and 5% by mass or less based on the total mass of the developer. More preferred.
  • the lower limit of the above content is not particularly limited, but is preferably 0.1% by mass or more, for example. If the basic compound or base generator is solid in the environment in which the developer is used, the content of the basic compound or base generator should be 70 to 100% by mass based on the total solid content of the developer. is also preferable.
  • the developing solution may contain only one type of at least one of a basic compound and a base generator, or may contain two or more types. When at least one of the basic compound and the base generator is two or more types, it is preferable that the total is within the above range.
  • the developer may further contain other components.
  • other components include known surfactants and known antifoaming agents.
  • the method of supplying the developer is not particularly limited as long as the desired pattern can be formed, and methods include immersing the base material on which the film is formed in the developer, and supplying the developer to the film formed on the base material using a nozzle.
  • a method of supplying with a spray nozzle is more preferable.
  • the base material is spun to remove the developer from the base material, and after spin drying, the developer is continuously supplied again using the straight nozzle, the base material is spun, and the developer is applied to the base material.
  • a process of removing from above may be adopted, or this process may be repeated multiple times.
  • Methods for supplying the developer in the development process include a process in which the developer is continuously supplied to the base material, a process in which the developer is kept in a substantially stationary state on the base material, and a process in which the developer is applied to the base material using ultrasonic waves. Examples include a step of vibrating with the like, and a step of combining these.
  • the development time is preferably 10 seconds to 10 minutes, more preferably 20 seconds to 5 minutes.
  • the temperature of the developer during development is not particularly limited, but is preferably 10 to 45°C, more preferably 18 to 30°C.
  • the developing solution is an alkaline aqueous solution
  • water can be used as the rinsing solution, for example.
  • a solvent different from the solvent contained in the developer e.g., water, an organic solvent different from the organic solvent contained in the developer
  • the rinse solution is used as the rinse solution. be able to.
  • Examples of the organic solvent when the rinsing liquid contains an organic solvent include the same organic solvents as those exemplified in the case where the above-mentioned developer contains an organic solvent.
  • the organic solvent contained in the rinsing liquid is preferably an organic solvent different from the organic solvent contained in the developer, and more preferably an organic solvent in which the pattern has a lower solubility than the organic solvent contained in the developer.
  • the rinsing liquid contains an organic solvent
  • the organic solvent is preferably cyclopentanone, ⁇ -butyrolactone, dimethyl sulfoxide, N-methylpyrrolidone, cyclohexanone, PGMEA, or PGME, more preferably cyclopentanone, ⁇ -butyrolactone, dimethyl sulfoxide, PGMEA, or PGME, and cyclohexanone or PGMEA. More preferred.
  • the organic solvent is preferably 50% by mass or more, more preferably 70% by mass or more, and even more preferably 90% by mass or more, based on the total mass of the rinsing liquid. Moreover, the organic solvent may be 100% by mass with respect to the total mass of the rinsing liquid.
  • the rinsing liquid may contain at least one of a basic compound and a base generator.
  • a basic compound and a base generator when the developer contains an organic solvent, one preferred embodiment of the present invention is an embodiment in which the rinsing solution contains an organic solvent and at least one of a basic compound and a base generator.
  • the basic compound and base generator contained in the rinsing solution include the compounds exemplified as the basic compound and base generator that may be included when the above-mentioned developer contains an organic solvent, and preferred embodiments are also included. The same is true.
  • the basic compound and base generator contained in the rinsing liquid may be selected in consideration of their solubility in the solvent in the rinsing liquid.
  • the content of the basic compound or the base generator is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the rinsing liquid. preferable.
  • the lower limit of the above content is not particularly limited, but is preferably 0.1% by mass or more, for example. If the basic compound or base generator is solid in the environment where the rinse solution is used, the content of the basic compound or base generator should be 70 to 100% by mass based on the total solid content of the rinse solution. is also preferable.
  • the rinsing liquid may contain only one type of at least one of the basic compound and the base generator, or may contain two or more types of the basic compound and the base generator. .
  • the total is within the above range.
  • the rinse solution may further contain other components.
  • other components include known surfactants and known antifoaming agents.
  • a method of supplying the rinsing liquid using a spray nozzle is more preferable.
  • a method of supplying the rinsing liquid using a spray nozzle is more preferable.
  • the type of nozzle and examples include straight nozzles, shower nozzles, spray nozzles, and the like.
  • the rinsing step is preferably a step in which the rinsing liquid is supplied to the exposed film through a straight nozzle or continuously, and more preferably a step in which the rinsing liquid is supplied through a spray nozzle.
  • Methods for supplying the rinsing liquid in the rinsing process include a process in which the rinsing liquid is continuously supplied to the substrate, a process in which the rinsing liquid is kept almost stationary on the substrate, and a process in which the rinsing liquid is applied to the substrate by ultrasonic waves. It is possible to adopt a process of vibrating the wafer, etc., and a process of combining these.
  • the rinsing time is preferably 10 seconds to 10 minutes, more preferably 20 seconds to 5 minutes.
  • the temperature of the rinsing liquid during rinsing is not particularly limited, but is preferably 10 to 45°C, more preferably 18 to 30°C.
  • the developing step may include a step of bringing the processing solution into contact with the pattern after processing using the developer or after cleaning the pattern with a rinse solution.
  • a method may be adopted in which the processing liquid is supplied before the developing liquid or the rinsing liquid in contact with the pattern is completely dried.
  • the treatment liquid examples include a treatment liquid containing at least one of water and an organic solvent, and at least one of a basic compound and a base generator.
  • Preferred embodiments of the organic solvent and at least one of the basic compound and base generator are the same as the preferred embodiments of the organic solvent and at least one of the basic compound and base generator used in the above-mentioned rinsing solution.
  • the method for supplying the treatment liquid to the pattern can be the same as the method for supplying the rinsing liquid described above, and the preferred embodiments are also the same.
  • the content of the basic compound or base generator in the treatment liquid is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the treatment liquid.
  • the lower limit of the content is not particularly limited, but is preferably 0.1% by mass or more, for example.
  • the content of the basic compound or base generator is 70 to 100% by mass based on the total solid content of the treatment liquid. It's also good to have one.
  • the processing liquid contains at least one of a basic compound and a base generator
  • the processing liquid may contain only one type of at least one of the basic compound and the base generator, or may contain two or more types of the basic compound and the base generator. .
  • at least one of the basic compound and the base generator is two or more types, it is preferable that the total is within the above range.
  • the pattern obtained by the development step may be subjected to a heating step of heating the pattern obtained by the development.
  • the method for producing a cured product of the present invention may include a heating step of heating the pattern obtained by the developing step.
  • the method for producing a cured product of the present invention may include a heating step of heating a pattern obtained by another method without performing a developing step, or a film obtained by a film forming step.
  • a resin such as a polyimide precursor is cyclized to become a resin such as polyimide.
  • the heating temperature (maximum heating temperature) in the heating step is preferably 50 to 450°C, more preferably 150 to 350°C, even more preferably 150 to 250°C, even more preferably 160 to 250°C, particularly 160 to 230°C. preferable.
  • the heating step is preferably a step of promoting the cyclization reaction of the polyimide precursor within the pattern by heating and the action of a base generated from the base generator.
  • Heating in the heating step is preferably carried out at a temperature increase rate of 1 to 12° C./min from the temperature at the start of heating to the maximum heating temperature.
  • the temperature increase rate is more preferably 2 to 10°C/min, and even more preferably 3 to 10°C/min.
  • the temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, even more preferably 25°C to 120°C.
  • the temperature at the start of heating refers to the temperature at which the process of heating to the maximum heating temperature is started.
  • the temperature of the film (layer) after drying is, for example, 30°C higher than the boiling point of the solvent contained in the resin composition. It is preferable to raise the temperature from a lower temperature by ⁇ 200°C.
  • the heating time (heating time at the highest heating temperature) is preferably 5 to 360 minutes, more preferably 10 to 300 minutes, and even more preferably 15 to 240 minutes.
  • the heating temperature is preferably 30°C or higher, more preferably 80°C or higher, even more preferably 100°C or higher, and particularly preferably 120°C or higher.
  • the upper limit of the heating temperature is preferably 350°C or lower, more preferably 250°C or lower, and even more preferably 240°C or lower.
  • Heating may be performed in stages. As an example, the temperature is raised from 25°C to 120°C at a rate of 3°C/min, held at 120°C for 60 minutes, and the temperature is raised from 120°C to 180°C at a rate of 2°C/min, and held at 180°C for 120 minutes. , etc. may be performed. It is also preferable to perform the treatment while irradiating ultraviolet rays as described in US Pat. No. 9,159,547. Such pretreatment steps can improve the properties of the film. The pretreatment step is preferably carried out for a short time of about 10 seconds to 2 hours, more preferably 15 seconds to 30 minutes.
  • the pretreatment may be performed in two or more steps, for example, the first pretreatment step may be performed at a temperature of 100 to 150°C, followed by the second pretreatment step at a temperature of 150 to 200°C. good. Furthermore, cooling may be performed after heating, and the cooling rate in this case is preferably 1 to 5° C./min.
  • the heating step is preferably performed in an atmosphere with a low oxygen concentration, such as by flowing an inert gas such as nitrogen, helium, or argon, or under reduced pressure, from the viewpoint of preventing decomposition of the specific resin.
  • the oxygen concentration is preferably 50 ppm (volume ratio) or less, more preferably 20 ppm (volume ratio) or less.
  • the heating means in the heating step is not particularly limited, and includes, for example, a hot plate, an infrared oven, an electric oven, a hot air oven, an infrared oven, and the like.
  • the pattern obtained by the development process (in the case of performing a rinsing process, the pattern after rinsing) is subjected to a post-development exposure process in which the pattern after the development process is exposed to light instead of or in addition to the heating process. may be served.
  • the method for producing a cured product of the present invention may include a post-development exposure step of exposing the pattern obtained in the development step.
  • the method for producing a cured product of the present invention may include a heating step and a post-development exposure step, or may include only one of the heating step and the post-development exposure step.
  • the post-development exposure step for example, a reaction in which cyclization of a polyimide precursor, etc.
  • the post-development exposure step at least a portion of the pattern obtained in the development step may be exposed, but it is preferable that the entire pattern be exposed.
  • the exposure amount in the post-development exposure step is preferably 50 to 20,000 mJ/cm 2 , more preferably 100 to 15,000 mJ/cm 2 in terms of exposure energy at the wavelength to which the photosensitive compound is sensitive.
  • the post-development exposure step can be performed, for example, using the light source used in the above-mentioned exposure step, and it is preferable to use broadband light.
  • the pattern obtained by the development process may be subjected to a metal layer forming process of forming a metal layer on the pattern. That is, the method for producing a cured product of the present invention includes a metal layer forming step of forming a metal layer on the pattern obtained in the development step (preferably one that has been subjected to at least one of the heating step and the post-development exposure step). It is preferable.
  • metal layer existing metal species can be used without particular limitation, and examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing these metals. copper and aluminum are more preferred, and copper is even more preferred.
  • the method for forming the metal layer is not particularly limited, and existing methods can be applied.
  • the methods described in JP 2007-157879, JP 2001-521288, JP 2004-214501, JP 2004-101850, US Patent No. 7888181B2, and US Patent No. 9177926B2 are used. can do.
  • photolithography, PVD (physical vapor deposition), CVD (chemical vapor deposition), lift-off, electrolytic plating, electroless plating, etching, printing, and a combination thereof can be used.
  • a patterning method that combines sputtering, photolithography, and etching, and a patterning method that combines photolithography and electrolytic plating can be mentioned.
  • a preferred embodiment of plating includes electrolytic plating using copper sulfate or copper cyanide plating solution.
  • the thickness of the metal layer is preferably 0.01 to 50 ⁇ m, more preferably 1 to 10 ⁇ m at the thickest part.
  • Fields to which the method for producing a cured product of the present invention or the cured product can be applied include insulating films for electronic devices, interlayer insulating films for rewiring layers, stress buffer films, and the like. Other methods include forming a pattern by etching a sealing film, a substrate material (a base film or coverlay of a flexible printed circuit board, an interlayer insulating film), or an insulating film for mounting purposes as described above. Regarding these uses, for example, Science & Technology Co., Ltd., "Advanced Functionality and Applied Technology of Polyimide", April 2008, Masaaki Kakimoto/Supervised, CMC Technical Library, "Basics and Development of Polyimide Materials", November 2011. You can refer to "Latest Polyimide Basics and Applications” published by Japan Polyimide and Aromatic Polymer Research Society/editor, NTS, August 2010, etc.
  • the method for producing a cured product of the present invention or the cured product of the present invention can be used for producing plates such as offset plates or screen plates, for etching molded parts, and for use in protective lacquers and dielectric layers in electronics, particularly microelectronics. It can also be used for manufacturing.
  • the laminate of the present invention refers to a structure having a plurality of layers made of the cured product of the present invention.
  • the laminate is a laminate including two or more layers made of cured material, and may be a laminate including three or more layers. At least one of the two or more layers made of the cured product contained in the laminate is a layer made of the cured product of the present invention, and shrinkage of the cured product or deformation of the cured product due to the shrinkage, etc. From the viewpoint of suppression, it is also preferable that all the layers made of the cured product contained in the above-mentioned laminate are layers made of the cured product of the present invention.
  • the method for producing a laminate of the present invention preferably includes the method for producing a cured product of the present invention, and more preferably includes repeating the method for producing a cured product of the present invention multiple times.
  • the laminate of the present invention preferably includes two or more layers made of a cured product and includes a metal layer between any of the layers made of the cured product.
  • the metal layer is preferably formed by the metal layer forming step. That is, it is preferable that the method for producing a laminate of the present invention further includes a metal layer forming step of forming a metal layer on the layer made of the cured product during the method for producing the cured product which is performed multiple times.
  • a preferred embodiment of the metal layer forming step is as described above.
  • a laminate including at least a layered structure in which three layers, a layer made of a first cured product, a metal layer, and a layer made of a second cured product are laminated in this order is preferred. It will be done. It is preferable that the layer made of the first cured product and the layer made of the second cured product are both layers made of the cured product of the present invention.
  • the resin composition of the present invention used for forming the layer consisting of the first cured product and the resin composition of the present invention used for forming the layer consisting of the second cured product have the same composition. It may be a product or a composition having a different composition.
  • the metal layer in the laminate of the present invention is preferably used as metal wiring such as a rewiring layer.
  • the method for manufacturing a laminate of the present invention includes a lamination step.
  • the lamination process refers to (a) film formation process (layer formation process), (b) exposure process, (c) development process, (d) heating process and development on the surface of the pattern (resin layer) or metal layer again. This is a series of steps including performing at least one of the post-exposure steps in this order.
  • an embodiment may be adopted in which at least one of the (a) film forming step and (d) heating step and post-development exposure step is repeated.
  • a (e) metal layer forming step may be included.
  • the lamination step may further include the above-mentioned drying step and the like as appropriate.
  • a surface activation treatment step may be performed after the exposure step, the heating step, or the metal layer forming step.
  • Plasma treatment is exemplified as the surface activation treatment. Details of the surface activation treatment will be described later.
  • the above lamination step is preferably performed 2 to 20 times, more preferably 2 to 9 times.
  • the above layers may have the same composition, shape, thickness, etc., or may have different compositions, shapes, thicknesses, etc.
  • a cured product (resin layer) of the resin composition of the present invention is further formed to cover the metal layer.
  • the following steps are repeated in the following order: (a) film formation step, (b) exposure step, (c) development step, (d) at least one of the heating step and post-development exposure step, and (e) metal layer formation step.
  • an embodiment may be mentioned in which (a) a film forming step, (d) at least one of a heating step and a post-development exposure step, and (e) a metal layer forming step are repeated in this order.
  • the method for manufacturing a laminate of the present invention preferably includes a surface activation treatment step of surface activation treatment of at least a portion of the metal layer and the resin composition layer.
  • the surface activation treatment step is usually performed after the metal layer forming step, but after the development step (preferably after at least one of the heating step and the post-development exposure step), the resin composition layer is subjected to the surface activation treatment. After performing this step, the metal layer forming step may be performed.
  • the surface activation treatment may be performed on at least a portion of the metal layer, or may be performed on at least a portion of the resin composition layer after exposure, or the surface activation treatment may be performed on at least a portion of the metal layer and the resin composition layer after exposure.
  • the surface activation treatment is preferably performed on at least a part of the metal layer, and it is preferable that the surface activation treatment is performed on part or all of the region of the metal layer on which the resin composition layer is to be formed.
  • the surface activation treatment is also performed on part or all of the resin composition layer (resin layer) after exposure.
  • the resin composition layer when the resin composition layer is hardened, such as when performing negative development, it is less likely to be damaged by surface treatment and adhesion is likely to be improved.
  • the surface activation treatment can be performed, for example, by the method described in paragraph 0415 of International Publication No. 2021/112189. This content is incorporated herein.
  • the present invention also discloses a semiconductor device containing the cured product or laminate of the present invention.
  • the present invention also discloses a method for manufacturing a semiconductor device, including a method for manufacturing a cured product or a method for manufacturing a laminate according to the present invention.
  • a semiconductor device using the resin composition of the present invention for forming an interlayer insulating film for a rewiring layer the descriptions in paragraphs 0213 to 0218 of JP 2016-027357A and the description in FIG. 1 can be referred to, Their contents are incorporated herein.
  • the polyimide precursor of the present invention includes a repeating unit represented by formula (1) and a repeating unit represented by formula (2) below.
  • Preferred embodiments of the polyimide precursor of the present invention are the same as those of the above-mentioned polyimide precursor contained in the above-described resin composition of the present invention.
  • the polyimide precursor of the present invention preferably contains a repeating unit represented by the following formula (2-2) as the repeating unit represented by the above formula (2).
  • the polyimide precursor of the present invention has the above-mentioned formula (3) as a repeating unit different from both the repeating unit represented by the above-mentioned formula (1) and the repeating unit represented by the above-mentioned formula (2).
  • Z 3 in the above formula (3) preferably has a structure represented by the above formula (Z3-1) or formula (Z3-2).
  • the polyimide precursor (SP-1) is a resin having three repeating units represented by the following formula (SP-1). The structure of each repeating unit was determined from the 1 H-NMR spectrum.
  • composition ratio mol% content of repeating units
  • weight average molecular weight % average molecular weight of these resins
  • number average molecular weight of these resins are shown in the table below.
  • ⁇ Synthesis example AN-1 Synthesis of anhydride AN-1> In a flask equipped with a stirrer and a condenser, 30.95 g (147 mmol) of trimellitic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) and 12.2 g (154 mmol) of pyridine were dissolved in 100 g of tetrahydrofuran. Cooled to °C.
  • anhydride AN-1 The structure of anhydride AN-1 is shown in the following formula (AN-1).
  • the weight average molecular weight of the obtained polyimide precursor (SP-10) was 58,600, and the number average molecular weight was 21,500.
  • the polyimide precursor (SP-10) is a resin having three repeating units represented by the following formula (SP-10). The structure of each repeating unit was determined from the 1 H-NMR spectrum.
  • Synthesis of polyimide precursor (SP-11)> A polyimide precursor (SP-11) was synthesized in the same manner as Synthesis Example SP-10, except that the raw material compounds were changed as appropriate.
  • the polyimide precursor (SP-11) is a resin having three repeating units represented by the following formula (SP-11). The structure of each repeating unit was determined from the 1 H-NMR spectrum.
  • the polyimide precursor was then precipitated in 4 liters of water and the water-polyimide precursor mixture was stirred at a speed of 500 rpm for 15 minutes.
  • the polyimide precursor was obtained by filtration, stirred again in 4 liters of water for 30 minutes and filtered again.
  • the obtained polyimide precursor was dried at 45° C. for 2 days under reduced pressure to obtain a polyimide precursor (SP-13).
  • the weight average molecular weight of the obtained polyimide precursor (SP-13) was 51,400, and the number average molecular weight was 20,100.
  • the polyimide precursor (SP-13) is a resin having three repeating units represented by the following formula (SP-13). The structure of each repeating unit was determined from the 1 H-NMR spectrum.
  • methacrylic acid chloride manufactured by Tokyo Kasei Kogyo Co., Ltd.
  • methacrylic acid chloride manufactured by Tokyo Kasei Kogyo Co., Ltd.
  • CS-7 is a compound represented by the following formula CS-7. It was confirmed from the 1 H-NMR spectrum that it was CS-7.
  • the resulting reaction solution was added to 3 liters of ethyl alcohol to produce a precipitate consisting of a crude polymer.
  • the produced crude polymer was collected by filtration and dissolved in 1.5 liters of tetrahydrofuran to obtain a crude polymer solution.
  • the obtained crude polymer solution was dropped into 28 liters of water to precipitate the polymer, and the obtained precipitate was collected by filtration and vacuum dried to obtain a powdery polyimide precursor (A-1). .
  • the weight average molecular weight (Mw) of this polyimide precursor (A-1) was measured and found to be 22,600.
  • the polyimide precursor (A-1) contains a repeating unit having the following structure. The structure of each repeating unit was determined from the 1 H-NMR spectrum.
  • the polyimide precursor was obtained by filtration, stirred again in 4 liters of water for 30 minutes and filtered again. Next, the obtained polyimide precursor was dried at 45° C. for 2 days under reduced pressure to obtain a polyimide precursor (A-2).
  • the weight average molecular weight of the obtained polyimide precursor (A-2) was 30,200, and the number average molecular weight was 12,400.
  • the polyimide precursor (A-2) contains a repeating unit having the following structure. The structure of each repeating unit was determined from the 1 H-NMR spectrum.
  • Examples and comparative examples> In each Example, the components listed in the table below were mixed to obtain each resin composition. In each comparative example, the components listed in the table below were mixed to obtain comparative compositions. Specifically, the content of each component listed in the table was the amount (parts by mass) listed in the "addition amount” column in each column of the table. The obtained resin composition and comparative composition were pressure-filtered using a polytetrafluoroethylene filter with a pore width of 0.5 ⁇ m. Furthermore, in the table, the description "-" indicates that the composition does not contain the corresponding component.
  • Polyimide precursor - SP-1 to SP-16: Polyimide precursors (SP-1) to (SP-16) synthesized above.
  • the polyimide precursors (SP-1) to (SP-16) are compounds corresponding to the above-mentioned specific resins.
  • - A-1 to A-2 Polyimide precursors (A-1) to (A-2) synthesized above.
  • Polyimide precursors (A-1) to (A-2) are compounds that do not fall under the above-mentioned specific resins.
  • a resin composition layer was formed by applying a resin composition or a comparative composition onto a silicon wafer by a spin coating method.
  • the silicon wafer to which the obtained resin composition layer was applied was dried on a hot plate at 100° C. for 5 minutes to obtain a uniform resin composition layer with a thickness of about 15 ⁇ m on the silicon wafer.
  • the entire surface of the obtained resin composition layer was exposed to i-line using a stepper (Nikon NSR 2005 i9C) at an exposure energy of 500 mJ/cm 2 .
  • the exposed resin composition layer was heated at a rate of 10°C/min in a nitrogen atmosphere to reach the temperature listed in the "Temperature” column of “Curing conditions” in the table. After that, it was heated at that temperature for 3 hours (2 hours in the case where 170°C was written in the "temperature” column).
  • the cured resin layer (cured film) was immersed in a 4.9% by mass aqueous hydrofluoric acid solution, and the cured film was peeled off from the silicon wafer. The peeled cured film was punched out using a punching machine to produce a test piece with a sample width of 3 mm and a sample length of 30 mm.
  • the obtained test piece was tested using a tensile tester (Tensilon) at a crosshead speed of 300 mm/min in an environment of 25°C and 65% RH (relative humidity) in accordance with JIS-K6251 (2014).
  • the elongation at break in the longitudinal direction of the test piece was measured.
  • the evaluation was performed five times each, and the arithmetic mean value of the elongation rate when the test piece broke (elongation rate at break) was used as an index value.
  • the above index values were evaluated according to the following evaluation criteria, and the evaluation results are listed in the "Elongation at Break" column of the table. It can be said that the larger the index value is, the better the film strength (elongation at break) of the resulting cured film is.
  • evaluation criteria A: The above index value was 70% or more.
  • B The above index value was 60% or more and less than 70%.
  • C The above index value was 50% or more and less than 60%.
  • D The above index value was less than
  • the Young's modulus of the test piece prepared in the above evaluation of elongation at break was determined using a tensile tester (Tensilon) at a crosshead speed of 5 mm/min, 25°C, and an environment of 65% RH (relative humidity) according to JIS K. 7161:2014. The measurements were performed five times each, and the arithmetic mean value of Young's modulus (tensile modulus) when the test piece broke in the five measurements was used as the index value. The evaluation results are listed in the "Young's modulus" column of the table. (Evaluation criteria) A: Young's modulus was 5.0 GPa or more.
  • Young's modulus was 4.5 GPa or more and less than 5.0 GPa.
  • C Young's modulus was 3.5 GPa or more and less than 4.5 GPa.
  • D Young's modulus was less than 3.5 GPa.
  • Test pieces were prepared in the same manner as in the evaluation of elongation at break described above.
  • the elongation (displacement) of the above test piece (cured product) was measured while changing the temperature using a thermomechanical analysis/thermal expansion coefficient measuring device Discovery TMA manufactured by TA Instruments Japan Co., Ltd.
  • the temperature raising/lowering conditions during evaluation were as shown in (1) to (3) below.
  • the temperature was lowered from 130°C to 10°C at a cooling rate of 5°C/min.
  • the temperature was raised from 10°C to 220°C at a heating rate of 5°C/min.
  • Naturally cool to room temperature was raised from 10°C to 220°C at a heating rate of 5°C/min.
  • the elongation (displacement) of the sample was measured during the temperature rising and cooling processes of (1) to (4) above, and the elongation (displacement) of the sample at 25°C and 125°C in the process (3) was divided by the temperature. This was calculated and used as the coefficient of thermal expansion.
  • the obtained coefficient of thermal expansion was evaluated according to the following evaluation criteria, and the evaluation results are listed in the "CTE" column of the table.
  • Void area ratio (%) (Area of voids observed by SEM measurement) / (Total area of resin layer) x 100 Based on the value of the void area ratio obtained, evaluation was performed according to the following evaluation criteria. It can be said that the smaller the void area ratio is, the better the PCT (moist heat) resistance of the cured film is, and it can be said that even after a long period of time, voids are less likely to form between the metal layer and the cured product. A: The void area ratio was 0.5% or less. B: The void area ratio was more than 0.5% and less than 1%. C: The void area ratio was more than 1% and less than 2%. D: The void area ratio exceeded 2%.
  • the cured product formed from the resin composition of the present invention has a low CTE and excellent moisture resistance.
  • the comparative compositions according to Comparative Examples 1 and 2 do not contain the specific resin. Regarding such comparative compositions, it can be seen that the resulting cured products have a large CTE or poor moisture resistance.
  • the polyimide precursor (A-1) in Comparative Example 1 contains neither the repeating unit represented by formula (1) nor the repeating unit represented by formula (2). It can be seen that in such an embodiment, the CTE is large.
  • the polyimide precursor (A-2) in Comparative Example 2 does not have a repeating unit represented by formula (2). It can be seen that in such an embodiment, the moisture resistance is poor.
  • Example 201 The resin composition used in Example 1 was applied in a layered manner by spin coating to the surface of the thin copper layer of the resin base material on which the thin copper layer was formed, and dried at 100°C for 5 minutes to determine the film thickness. After forming a 20 ⁇ m photoresist film, it was exposed using a stepper (NSR1505 i6, manufactured by Nikon Corporation). Exposure was performed at a wavelength of 365 nm through a mask (a binary mask with a 1:1 line-and-space pattern and a line width of 10 ⁇ m). After the above exposure, it was developed with cyclopentanone for 2 minutes and rinsed with PGMEA for 30 seconds to obtain a layer pattern.
  • NSR1505 i6 a binary mask with a 1:1 line-and-space pattern and a line width of 10 ⁇ m
  • the temperature was raised at a rate of 10° C./min in a nitrogen atmosphere, and after reaching 230° C., the temperature was maintained at 230° C. for 180 minutes to form an interlayer insulating film for a rewiring layer.
  • This rewiring layer interlayer insulating film had excellent insulation properties. Furthermore, when a semiconductor device was manufactured using this interlayer insulating film for rewiring layer, it was confirmed that it operated without any problem.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

La présente invention concerne une composition de résine contenant un précurseur de polyimide qui comprend un motif répétitif représenté par la formule (1) et un motif répétitif représenté par la formule (2), un composé polymérisable et un initiateur de polymérisation ; un article durci ; un stratifié ; un procédé de production d'un article durci ; un procédé de production d'un stratifié ; un procédé de production d'un dispositif à semi-conducteur ; et un dispositif à semi-conducteur.
PCT/JP2023/011591 2022-03-29 2023-03-23 Composition de résine, article durci, stratifié, procédé de production d'article durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur Ceased WO2023190062A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202380031624.7A CN118974115A (zh) 2022-03-29 2023-03-23 树脂组合物、固化物、层叠体、固化物的制造方法、层叠体的制造方法、半导体器件的制造方法及半导体器件
KR1020247032280A KR20240156622A (ko) 2022-03-29 2023-03-23 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
JP2024512287A JPWO2023190062A1 (fr) 2022-03-29 2023-03-23

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-053722 2022-03-29
JP2022053722 2022-03-29

Publications (1)

Publication Number Publication Date
WO2023190062A1 true WO2023190062A1 (fr) 2023-10-05

Family

ID=88202105

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/011591 Ceased WO2023190062A1 (fr) 2022-03-29 2023-03-23 Composition de résine, article durci, stratifié, procédé de production d'article durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur

Country Status (5)

Country Link
JP (1) JPWO2023190062A1 (fr)
KR (1) KR20240156622A (fr)
CN (1) CN118974115A (fr)
TW (1) TW202349119A (fr)
WO (1) WO2023190062A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923308B1 (fr) * 1969-12-16 1974-06-14
JPS5155397A (en) * 1974-11-11 1976-05-15 Showa Electric Wire & Cable Co Denkizetsuentoryono seizohoho
JP2013155281A (ja) * 2012-01-30 2013-08-15 Hitachi Cable Ltd 絶縁塗料、該絶縁塗料を用いた絶縁電線および該絶縁電線を用いたコイル
WO2014097633A1 (fr) * 2012-12-21 2014-06-26 日立化成デュポンマイクロシステムズ株式会社 Précurseur polyimide, composition de résine photosensible contenant ce précurseur polyimide ainsi que procédé de fabrication d'un film durci à motif mettant en oeuvre cette composition et dispositif à semi-conducteurs associé
JP2021173787A (ja) * 2020-04-20 2021-11-01 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、硬化レリーフパターン、半導体装置及び表示体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923308B1 (fr) * 1969-12-16 1974-06-14
JPS5155397A (en) * 1974-11-11 1976-05-15 Showa Electric Wire & Cable Co Denkizetsuentoryono seizohoho
JP2013155281A (ja) * 2012-01-30 2013-08-15 Hitachi Cable Ltd 絶縁塗料、該絶縁塗料を用いた絶縁電線および該絶縁電線を用いたコイル
WO2014097633A1 (fr) * 2012-12-21 2014-06-26 日立化成デュポンマイクロシステムズ株式会社 Précurseur polyimide, composition de résine photosensible contenant ce précurseur polyimide ainsi que procédé de fabrication d'un film durci à motif mettant en oeuvre cette composition et dispositif à semi-conducteurs associé
JP2021173787A (ja) * 2020-04-20 2021-11-01 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、硬化レリーフパターン、半導体装置及び表示体装置

Also Published As

Publication number Publication date
CN118974115A (zh) 2024-11-15
JPWO2023190062A1 (fr) 2023-10-05
KR20240156622A (ko) 2024-10-30
TW202349119A (zh) 2023-12-16

Similar Documents

Publication Publication Date Title
WO2023162687A1 (fr) Composition de résine, article durci, stratifié, procédé de production d'article durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur
WO2023190064A1 (fr) Composition de résine, produit durci, stratifié, procédé de production de produit durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur
WO2023189126A1 (fr) Composition de résine, produit durci, produit stratifié, procédé de production de produit durci, procédé de production de produit stratifié, procédé de production de dispositif semi-conducteur et dispositif semi-conducteur
WO2023157911A1 (fr) Composition de résine, produit durci, corps multicouche, procédé de production d'un produit durci, procédé de production d'un corps multicouche, procédé de production d'un dispositif semiconducteur et dispositif semiconducteur
WO2023190060A1 (fr) Composition de résine photosensible, produit durci, corps multicouche, procédé de production de produit durci, procédé de production de corps multicouche, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur
WO2024063025A1 (fr) Composition de résine, objet durci ainsi que procédé de fabrication de celui-ci, stratifié ainsi que procédé de fabrication de celui-ci, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
WO2023190063A1 (fr) Procédé de production d'un produit durci, procédé de production d'un dispositif à semi-conducteur, liquide de traitement et composition de résine
KR20250055605A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
WO2023120035A1 (fr) Composition de résine, objet durci ainsi que procédé de fabrication de celui-ci, stratifié ainsi que procédé de fabrication de celui-ci, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
WO2023120314A1 (fr) Stratifié, dispositif, composition de résine, procédé de fabrication de produit durci, procédé de fabrication de stratifié et procédé de fabrication de dispositif
WO2023190062A1 (fr) Composition de résine, article durci, stratifié, procédé de production d'article durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur
WO2023190061A1 (fr) Composition de résine, produit durci, stratifié, procédé de production de produit durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur
WO2024024833A1 (fr) Composition de résine, produit durci, stratifié, procédé de fabrication de produit durci, procédé de fabrication de stratifié, procédé de fabrication de dispositif à semi-conducteur, dispositif à semi-conducteur, film de résine et composé
WO2023112573A1 (fr) Procédé de production de produit durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et liquide de traitement
WO2025070302A1 (fr) Composition de résine et procédé de production d'un film isolant intercouche pour couche de redistribution
WO2024010026A1 (fr) Composition de résine, produit durci, corps multicouche, procédé de production d'un produit durci, procédé de production d'un corps multicouche, procédé de production d'un dispositif semiconducteur et dispositif semiconducteur
WO2023243613A1 (fr) Composition, matériau thermoconducteur, dispositif et procédé de production de particules inorganiques modifiées
WO2024048604A1 (fr) Composition de résine, objet durci ainsi que procédé de fabrication de celui-ci, stratifié ainsi que procédé de fabrication de celui-ci, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
WO2025094716A1 (fr) Composition de résine
WO2025028429A1 (fr) Composition de résine, produit durci, stratifié, procédé de production de produit durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur
WO2025100200A1 (fr) Composition de résine photosensible et procédé de production de produit durci
WO2024070713A1 (fr) Composition de résine, film isolant et procédé de production de film isolant intercouche pour couches de redistribution
WO2024203700A1 (fr) Composition de résine, composé diamine, produit durci, corps multicouche, procédé de production d'un produit durci, procédé de production d'un corps multicouche, procédé de production d'un dispositif semi-conducteur et dispositif semi-conducteur
WO2024048603A1 (fr) Composition de résine, objet durci ainsi que procédé de fabrication de celui-ci, stratifié ainsi que procédé de fabrication de celui-ci, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
WO2025023280A1 (fr) Composition de résine, produit durci, stratifié, procédé de production de produit durci, procédé de production de stratifié, procédé de production de dispositif à semi-conducteur et dispositif à semi-conducteur

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23780072

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2024512287

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20247032280

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020247032280

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 202380031624.7

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23780072

Country of ref document: EP

Kind code of ref document: A1