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WO2023027525A1 - Suscepteur en céramique - Google Patents

Suscepteur en céramique Download PDF

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Publication number
WO2023027525A1
WO2023027525A1 PCT/KR2022/012738 KR2022012738W WO2023027525A1 WO 2023027525 A1 WO2023027525 A1 WO 2023027525A1 KR 2022012738 W KR2022012738 W KR 2022012738W WO 2023027525 A1 WO2023027525 A1 WO 2023027525A1
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WO
WIPO (PCT)
Prior art keywords
electrode rod
ceramic
electrode
rod
ceramic susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2022/012738
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English (en)
Korean (ko)
Inventor
노임준
박명하
김택곤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mico Ceramics Ltd
Original Assignee
Mico Ceramics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mico Ceramics Ltd filed Critical Mico Ceramics Ltd
Publication of WO2023027525A1 publication Critical patent/WO2023027525A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Definitions

  • the present invention relates to a ceramic susceptor, and more particularly, to a ceramic susceptor to which a material of a high frequency electrode rod (RF Rod) for reducing impedance is applied to a ceramic susceptor based on ceramics such as AlN.
  • RF Rod high frequency electrode rod
  • a semiconductor device or display device is manufactured by sequentially stacking a plurality of thin film layers including a dielectric layer and a metal layer on a glass substrate, a flexible substrate, or a semiconductor wafer substrate and then patterning them. These thin film layers are sequentially deposited on a substrate through a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process.
  • the CVD process includes a Low Pressure CVD (LPCVD) process, a Plasma Enhanced CVD (PECVD) process, a Metal Organic CVD (MOCVD) process, and the like.
  • a ceramic susceptor is widely used to be used as a heater for accurate temperature control and heat treatment requirements in a plasma deposition process.
  • FIG. 1 is a view for explaining an electrode part of a conventional ceramic susceptor.
  • a conventional ceramic susceptor has an electrode part for coupling with external RF Rods 31 and 32 at the center of a ceramic plate 10 .
  • a heating element 11 is embedded in the ceramic plate 10 in a ring shape or the like, and a connector 12, which is an electrode base material electrically connected to the heating element 11, is embedded.
  • the support body 20 in the form of an eyelet is screwed through a screw thread formed in the opening, and brazing is applied between the upper electrode rod 31 and the lower electrode rod 32 and between the lower electrode rod 32 and the connector 12. (brazing) is bonded to electrically connect the electrode rods 31 and 32 for power supply and the heating element 11.
  • the gap between the support 20 and the lower electrode rod 32 or the gap between the support 20 and the ceramic plate 10 provides a path through which oxygen can permeate in a high-temperature atmosphere. and oxidizes the brazing filler formed at the interface between the connector 12, which is the electrode base material, and the lower electrode rod 32.
  • the brazing filler formed at the interface between the upper electrode rod 31 and the lower electrode rod 32 may also be oxidized by oxygen penetration. Due to such oxidation, electrical conductivity may decrease, power transmission efficiency may decrease, reliability of the electrode may decrease, and life of the ceramic susceptor may decrease.
  • heat-resistant and oxidation-resistant materials such as Ni or Ni alloy materials have been mainly used for conventional electrode rods. Since the Ni material applied to the conventional electrode rod is a ferromagnetic material, when used as a power transmission line in the high frequency region, the depth of the skin on the skin effect is small in the line where electrons will move, making it difficult for electrons to move, increasing impedance and generating heat. There are problems that arise.
  • conventionally as in Publication Patent No. 10-2018-0121662 (2018.11.07), Au, Ag, Al, or Cu is coated to increase the depth of the skin to reduce heat generation, As in Patent Publication No.
  • Ni or Ni alloy material has a high relative magnetic permeability ( ⁇ 600) as a ferromagnetism, so that when used as an RF (Radio Frequency) rod, the skin effect increases as the power and frequency increase. It was confirmed that the skin depth in the high-frequency electrode rod became extremely small, making it difficult for electrons to move, resulting in an increase in impedance.
  • the increase in the impedance of the electrode rod not only reduces the plasma efficiency as the electrical energy to be consumed for plasma discharge is converted into thermal energy at the electrode rod end and consumed, but also the heat generated from the electrode rod is generated by the ceramic plate supporting the substrate.
  • a hot-spot zone is formed on the surface of the upper portion, resulting in non-uniformity in the thickness and quality of a thin film deposited on the substrate, which can be a factor in reducing yield.
  • the destruction of the ceramic susceptor and the damage of the brazing joint due to thermal shock become a decisive factor in generating an arc,
  • the impedance problem of the electrode rod needs to be solved in order to increase the yield of semiconductor devices and improve the durability of ceramic susceptors.
  • an object of the present invention is to provide an electrode rod of a ceramic susceptor having good high-frequency transmission characteristics.
  • an object of the present invention is to provide an electrode rod structure of a ceramic susceptor having good radio frequency transmission characteristics in an oxidation-resistant and corrosion-resistant environment.
  • an object of the present invention is to select and apply a material having all of the thermal, electrical (magnetic), and mechanical properties required in the manufacturing and processing process environment of the ceramic susceptor as a material to be applied to the electrode rod of the ceramic susceptor.
  • a material having all of the thermal, electrical (magnetic), and mechanical properties required in the manufacturing and processing process environment of the ceramic susceptor as a material to be applied to the electrode rod of the ceramic susceptor.
  • it is to provide a ceramic susceptor having low impedance and applying a practical optimal material to the electrode rod.
  • a ceramic susceptor for achieving the above object is a ceramic susceptor including a ceramic plate on which a high frequency electrode is disposed, wherein the ceramic plate is the high frequency electrode. It includes a connector connected to an electrode, one end of which is connected to the connector and includes an electrode rod for supplying power to the high frequency electrode, wherein the electrode rod is made of Mo, W or an alloy thereof as a base material, and the base material It contains a metal nitride film on the surface.
  • the metal nitride layer may include TiAlN or AlN.
  • a thickness of the metal nitride film may be 6.0 ⁇ m to 10.0 ⁇ m.
  • the metal nitride film may be coated using a physical vapor deposition (PVD) method.
  • An adhesive layer may be further included between the surface of the electrode rod and the metal nitride film.
  • the adhesive layer may include Cr.
  • the adhesive layer may have a thickness of 0.5 ⁇ m to 4.0 ⁇ m.
  • materials such as Mo and W, which have low impedance and are practical and optimal materials, are applied to the high-frequency electrode rod and a TiAlN coating film is formed and applied in preparation for oxidation (corrosion). It is possible to provide a ceramic susceptor that has all of the thermal, electrical (magnetic), and mechanical properties required in the manufacturing and processing environment and is advantageous in terms of processability and material cost.
  • FIG. 1 is a view for explaining an electrode part of a conventional ceramic susceptor.
  • FIG. 2 is a view for explaining the structure of a ceramic susceptor according to an embodiment of the present invention.
  • FIG. 3 is a flowchart illustrating a process of forming a film of an electrode rod of a ceramic susceptor according to an embodiment of the present invention.
  • FIG. 4 is a diagram for comparing and explaining RF power loss rates between a case in which a conventional Ni and Ni alloy (inconel 625) is applied and a case in which Mo and W of the present invention are applied as a material for an electrode rod of a ceramic susceptor.
  • a conventional Ni and Ni alloy inconel 625
  • Mo and W of the present invention are applied as a material for an electrode rod of a ceramic susceptor.
  • Figure 5 is a SEM picture of the results of the oxidation reaction test of Mo and W of the electrode rod carried out under conditions similar to the actual use environment of the ceramic susceptor.
  • FIG. 6 is a SEM photograph of a case where a TiAlN layer is formed on an electrode rod base material of Mo and W.
  • first and second may be used to describe various components, but the components are not limited by the terms, and the terms are used for the purpose of distinguishing one component from another. used only as
  • the ceramic susceptor referred to in the present invention is provided in an apparatus for performing semiconductor processes, for supporting various substrates such as glass substrates, flexible substrates and semiconductor wafer substrates in processes such as plasma enhanced chemical vapor deposition. It can be used as an electrostatic chuck or as a heater for precise temperature control and heat treatment requirements in a plasma deposition process for precise processes such as miniaturization of wires in semiconductor devices.
  • the Electro Static Chuck function is to fix the corresponding substrate by using electrostatic force. In an ion implantation process or other semiconductor process equipment, chucking and dechucking are performed to tightly adsorb and release the substrate, and in particular, sufficient A clamping force may be provided to achieve chucking.
  • the high-frequency electrode of the ceramic susceptor is driven by AC voltage to improve the chucking and dechucking time of the substrate while maintaining the clamping pressure.
  • the heater function supplies power to the heating element of the ceramic susceptor for plasma formation and substrate heating in an etching process of thin film layers formed on a semiconductor wafer substrate or a photoresist firing process, together with the substrate support. can be driven by
  • the power supply of the high-frequency electrode of the ceramic susceptor through the electrode rod is exemplified and described (electrostatic chuck function), but is not limited thereto, and in the present invention, the heating element instead of the high-frequency electrode of the ceramic susceptor It should be noted in advance that the related description is similarly applicable even when power is supplied through the false electrode rod (heater function).
  • FIG. 2 is a diagram for explaining the structure of a ceramic susceptor 100 according to an embodiment of the present invention.
  • the ceramic susceptor 100 includes a ceramic plate 110 including a high frequency electrode 111 and an electrode rod part 150, and an electrode rod part 150. It includes an electrode rod 130, that is, a first rod 131 and a second rod 132 fastened to the opening 190 of the.
  • the ceramic susceptor 100 may include a support eyelet 120 coupled to the electrode rod 130 .
  • the ceramic plate 110 includes a high frequency electrode 111 buried in a ceramic material.
  • the electrode rod 130 is a component for supplying power (eg, Radio Frequency (RF) power) to the high-frequency electrode 111, and the support eyelet 120 fastened through the screw thread 191 of the ceramic plate 110 and are combined
  • RF Radio Frequency
  • the electrode rod part 150 of the ceramic plate 110 includes the connector 112 in the opening 190 for connecting the electrode rod 130, and also has a screw thread 191 formed on a part of the inner circumferential surface of the opening 190.
  • the support eyelet 120 coupled with the electrode rod 130 may have a screw thread (eg, a male screw thread) corresponding to the outer circumferential surface for fastening through a screw thread 191 (eg, a female screw thread).
  • the ceramic plate 110 further includes a heating element (not shown) for a heater function and a corresponding electrode rod between ceramic materials in addition to the high frequency electrode 111. can do. Therefore, although the structure of the electrode rod part 150 of the high frequency electrode 111 is described in the present invention, this structure can be applied to the electrode rod part for connecting the heating element (not shown) and the corresponding electrode rod as it is. let it out
  • the ceramic plate 110 may be configured so that the high frequency electrode 111 and/or the heating element (not shown) are spaced apart from each other at predetermined intervals and disposed (embedded) between the ceramic materials.
  • the ceramic plate 110 is configured to stably support a substrate to be processed and perform a plasma enhanced chemical vapor deposition process using a heating element (not shown) and/or a high frequency electrode 111 .
  • the ceramic plate 110 may be formed as a plate-like structure having a predetermined shape.
  • the ceramic plate 110 may be formed in a circular plate-like structure, but is not necessarily limited thereto.
  • the ceramic material is Al 2 O 3 , Y 2 O 3 , Al 2 O 3 /Y 2 O 3 , ZrO 2 , AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO 2 , TiO 2 , B x C y , BN, SiO 2 , SiC, YAG, Mullite, and AlF 3 It may be at least one material, preferably aluminum nitride (AlN). Further, each ceramic powder may optionally contain about 0.1 to 10% of yttrium oxide powder, preferably about 1 to 5%.
  • the connector 112 is buried in the ceramic plate 110 so as to be electrically connected to the high frequency electrode 111 and partially exposed on the bottom surface of the opening 190 .
  • An end surface of the electrode rod 130 and the connector 112 are electrically connected by brazing.
  • the high frequency electrode 111, connector 112, electrode rod 130, support eyelet 120, heating element (not shown), etc. may be made of a conductive material, for example, tungsten (W), molybdenum (Mo) , silver (Ag), nickel (Ni), gold (Au), niobium (Nb), titanium (Ti), or alloys thereof.
  • the electrode rod 130 has a low impedance and is preferably a paramagnetic material.
  • the electrode rod 130 may be made of Mo, W, or an alloy containing one or more of them, and an oxidation resistant film is provided on the surface of the electrode rod 130.
  • the oxidation resistant film may preferably include a metal nitride film.
  • the metal nitride layer may include AlN, more preferably TiAlN.
  • a ceramic susceptor 100 that has all of the thermal, electrical (magnetic), and mechanical properties required in the manufacturing and processing environment of the ceramic susceptor 100 and is advantageous in processability and material cost.
  • the electrode rod 130 is coupled inside the support eyelet 120 and may include a first rod 131 and a second rod 132 connected by brazing.
  • the electrode rod 130 may be formed of a single rod in which the first rod 131 and the second rod 132 are integrated, but the structure in which the first rod 131 and the second rod 132 are joined in this way may be
  • One end surface of the first rod 131 is brazed by the connector 112 and the first conductive pillar 151, and the second rod 132 is connected to the other end surface of the first rod 131 and the second conductive pillar 151. It is brazed by the filler 152.
  • an Au-Ni metal filler or the like may be used as the conductive fillers 151 and 152 .
  • Connector 112 may be molybdenum or a molybdenum alloy. Since the first rod 131 is close to the high frequency electrode 111 and causes heat loss and thermal stress, a coefficient of thermal expansion smaller than that of the second rod 132 is required to prevent heat loss and reduce cracks caused by thermal stress.
  • the first rod 131 and the second rod 132 may be made of Mo, W, or an alloy containing one or more of them, and the surface of the electrode rod 130 in preparation for oxidation (corrosion)
  • a metal nitride film (eg, TiAlN layer) 140 that is, a metal nitride film (eg, TiAlN layer) 141 on the surface of the first rod 131 and a metal nitride film (eg, TiAlN) on the surface of the second rod 132 layer) 142.
  • the first conductive filler 151 is injected in advance around the bottom surface of the opening 190, that is, the exposed portion of the connector 112, and the first conductive filler 151 is injected into the support eyelet 120.
  • the rod 131 is pushed to bring the one end surface of the first rod 131 into close contact with the connector 112, and then heated to a high temperature and then cooled.
  • the second conductive filler 152 is sufficiently injected into the upper part of the other end surface of the first rod 131, and the one end surface of the second rod 132 is brought into close contact with the injected second conductive filler 152. High temperature heating and cooling.
  • the ceramic susceptor 100 By using the ceramic susceptor 100 according to an embodiment of the present invention, power is supplied to the high-frequency electrode 111 through the connector 112 bonded to the electrode rod 130, thereby performing the function of an electrostatic chuck. In addition, heat treatment (or plasma enhanced chemical vapor deposition process).
  • the electrode rod 130 may be made of Mo, W, or an alloy (eg, MoW, MoNi, WNi, etc.) containing Mo, W, or one or more of them in a greater weight ratio (wt%) than other metal materials, and oxidation (corrosion) ), by including the metal nitride film (eg, TiAlN layer) 140 on the surface of the electrode rod 130 in preparation for the electrode rod 130, oxidation of the electrode rod 130 can be effectively prevented and the factor of impedance increase due to use is removed. By reducing changes such as an increase in impedance of the electrode rod 130 to eliminate energy loss converted to thermal energy in the electrode rod 130, electrical energy can be efficiently consumed in plasma discharge.
  • MoW, MoNi, WNi, etc. containing Mo, W, or one or more of them in a greater weight ratio (wt%) than other metal materials, and oxidation (corrosion)
  • the metal nitride film eg, TiAlN layer
  • the thickness of the thin film deposited on the substrate can improve the uniformity of thin film quality and increase the yield.
  • the reduced impedance change of the electrode rod 130 in the present invention can provide the ceramic susceptor 100 with improved durability and can contribute to increasing the yield of semiconductor devices.
  • FIG. 3 is a flowchart illustrating a process of forming a film of an electrode rod of a ceramic susceptor according to an embodiment of the present invention.
  • a metal nitride film eg, TiAlN layer 140 on the surface of the electrode rod 130 made of Mo, W or an alloy containing one or more of these.
  • PVD physical vapor deposition
  • the film of the electrode rod may be formed by including an adhesive layer 145 forming process (S110), a plasma pretreatment process (S120), and a reactive deposition process (S130).
  • the adhesive layer forming process is for reducing the internal stress of the metal nitride film (eg, TiAlN layer) 140 and for good adhesion.
  • the adhesive layer 145 may include a metal such as Cr or an alloy thereof.
  • the above The adhesive layer may include Cr nitride or nitride of a Cr alloy.
  • the adhesive layer 145 may be formed by arc ion plating.
  • a CrN layer may be deposited to a thickness of 0.5 ⁇ m to 4.0 ⁇ m as the adhesive layer 145 on the surface of the electrode rod 130 in arc ion plating equipment.
  • the CrN layer may be formed on the surface of the electrode rod 130 at a predetermined vacuum level by the PVD method while loading the Cr target into the arc ion plating equipment in advance and injecting nitrogen into the reactor.
  • an adhesive layer 145 may be formed on the surface of each rod.
  • the electrode rod 130 having the adhesive layer 145 is loaded into the arc ion plating equipment, and the surface of the electrode rod 130 is cleaned through plasma pretreatment at a vacuum level of 1x10 -5 Torr or less, and subsequent metal
  • the nitride film (eg TiAlN layer) 140 is optimally coated.
  • a TiAl alloy target is loaded in advance into the arc ion plating equipment, and after the plasma pretreatment process (S120) is completed, while injecting nitrogen into the reactor, a PVD method of about 1x10 -2 Torr In a vacuum, the metal nitride film (eg, TiAlN layer) 140 is formed to a thickness of 6.0 to 10.0 ⁇ m.
  • the TiAl alloy target may be a TiAl alloy target in which titanium (Ti) and aluminum (Al) are alloyed in a predetermined ratio (eg, 7:3 wt%).
  • FIG. 4 shows the RF power loss rate for the case where conventional Ni, Ni alloy (inconel 625) is applied and the case where Mo, W of the present invention is applied as the material of the electrode rod 130 of the ceramic susceptor 100. It is a drawing to explain the comparison.
  • the electrode rod 130 is generally exposed to air when used in a semiconductor process or the like. In this way, the electrode rod 130 maintained at a high temperature for a long time in a state exposed to the air is vulnerable to oxidation (corrosion).
  • an oxide layer having a thickness of about 110 ⁇ m was formed, and in the case of W, it was confirmed that an oxide layer having a thickness of about 120 ⁇ m was formed.
  • the oxide layer of the electrode rod 130 not only hinders the flow of electrons moving to the surface of the electrode rod 130, but also deteriorates the durability of the electrode rod 130 by corrosion and even contaminants such as oxidation reactants. is generated and must be improved as it acts as a cause of defects and equipment failures of products manufactured on the board.
  • a metal nitride film (eg, TiAlN layer) 140 for oxidation prevention is formed on the surface of the electrode rod 130.
  • the coating material coated on the base material of the electrode rod 130 made of Mo, W or an alloy containing one or more of them also has thermal, electrical (magnetic), and mechanical considerations as well as price and coating workability, as in the selection of the electrode rod material. etc. can be selected. For example, it was confirmed that oxidation was most effectively prevented when the TiAlN layer was coated with a physical vapor deposition (PVD) method as the metal nitride film 140 .
  • PVD physical vapor deposition
  • FIG. 6 is a SEM picture of a case where a TiAlN layer is formed on the base material of the electrode rod 130 of Mo and W.

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Abstract

La présente invention concerne un suscepteur en céramique. Le suscepteur en céramique de la présente invention comprend une plaque céramique sur laquelle est disposée une électrode radiofréquence, la plaque céramique comprenant un connecteur connecté à l'électrode radiofréquence et comprenant une tige d'électrode ayant une extrémité connectée au connecteur de façon à fournir de l'énergie électrique à l'électrode radiofréquence, et la tige d'électrode utilise du Mo, du W ou un alliage de celui-ci comme matériau de base et comprend un film de nitrure métallique sur la surface du matériau de base.
PCT/KR2022/012738 2021-08-27 2022-08-25 Suscepteur en céramique Ceased WO2023027525A1 (fr)

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KR20210114038 2021-08-27

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102742914B1 (ko) 2023-12-21 2024-12-16 주식회사 미코세라믹스 세라믹 서셉터
KR102741340B1 (ko) * 2023-12-21 2024-12-12 주식회사 미코세라믹스 세라믹 서셉터

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306629A (ja) * 1995-05-09 1996-11-22 Kyocera Corp ウエハ保持装置
JP2003188248A (ja) * 2001-12-19 2003-07-04 Kyocera Corp ウェハ支持部材
KR20130059764A (ko) * 2011-11-29 2013-06-07 (주)티티에스 기판 지지 모듈
KR20140132520A (ko) * 2013-05-08 2014-11-18 (주)화인솔루션 유기 발광 소자 제조용 마스크 및 그 제조 방법
KR20140142548A (ko) * 2013-06-04 2014-12-12 (주)티티에스 기판 지지 유닛

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306629A (ja) * 1995-05-09 1996-11-22 Kyocera Corp ウエハ保持装置
JP2003188248A (ja) * 2001-12-19 2003-07-04 Kyocera Corp ウェハ支持部材
KR20130059764A (ko) * 2011-11-29 2013-06-07 (주)티티에스 기판 지지 모듈
KR20140132520A (ko) * 2013-05-08 2014-11-18 (주)화인솔루션 유기 발광 소자 제조용 마스크 및 그 제조 방법
KR20140142548A (ko) * 2013-06-04 2014-12-12 (주)티티에스 기판 지지 유닛

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