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WO2023001067A1 - Conducteur magnétique artificiel et dispositif électronique - Google Patents

Conducteur magnétique artificiel et dispositif électronique Download PDF

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Publication number
WO2023001067A1
WO2023001067A1 PCT/CN2022/105950 CN2022105950W WO2023001067A1 WO 2023001067 A1 WO2023001067 A1 WO 2023001067A1 CN 2022105950 W CN2022105950 W CN 2022105950W WO 2023001067 A1 WO2023001067 A1 WO 2023001067A1
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WO
WIPO (PCT)
Prior art keywords
dielectric block
magnetic conductor
artificial magnetic
dielectric
block
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Ceased
Application number
PCT/CN2022/105950
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English (en)
Chinese (zh)
Inventor
冯一军
陈克
郑依琳
王汉阳
侯猛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of WO2023001067A1 publication Critical patent/WO2023001067A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/48—Earthing means; Earth screens; Counterpoises
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/14—Reflecting surfaces; Equivalent structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems

Definitions

  • the present application relates to the field of electromagnetic wave technology, in particular to an artificial magnetic conductor and electronic equipment.
  • AMC Artificial Magnetic Conductors
  • the traditional artificial magnetic conductor achieves zero-phase reflection at certain frequencies by drawing some patterns on the metal surface, and then applies it to structures such as antennas and absorbers.
  • the commonly used metal is copper.
  • the artificial magnetic conductor is formed by processing the metal. The process of the conductor is complicated and the cost is high.
  • An artificial magnetic conductor and electronic equipment have simple manufacturing process and low cost.
  • an artificial magnetic conductor including: a stacked dielectric layer and a metal back plate; the dielectric layer includes a plurality of repeating units, any repeating unit has the same structure, and each repeating unit includes a first dielectric block and a second dielectric block For two dielectric blocks, the second dielectric blocks in any two adjacent repeating units are connected to each other as a whole.
  • each repeating unit includes a first medium block and multiple second medium blocks; in the same repeating unit, multiple second medium blocks surround the first medium block; in any adjacent Among the two repeating units, at least one second dielectric block in one of the repeating units is connected as a whole with at least one second dielectric block in the other repeating unit.
  • each repeating unit includes a first medium block and four second medium blocks, and the four second medium blocks in each repeating unit are respectively the first sub-dielectric block, the second sub-dielectric block, and the second sub-dielectric block.
  • the fourth sub-dielectric block of the four repeating units is connected as a whole to form a combined dielectric block.
  • the orthographic projection of the first dielectric block on the metal backboard is a first square
  • the orthographic projection of the second dielectric block on the metal backboard is a second square
  • the side length of the first square is different from It is equal to the side length of the second square
  • the orthographic projection of the combined dielectric block on the metal backplane is the third square.
  • the first square is diagonally connected to each second square and integrated; the side length of the first square is equal to the side length of the third square.
  • the side length of the first square is a, 2.9mm ⁇ a ⁇ 3.1mm; the thickness of the first dielectric block and the second dielectric block are h, 1.1mm ⁇ h ⁇ 1.3mm.
  • each repeating unit the first square and each second square are arranged diagonally and at intervals; the side length of the first square is greater than or equal to the side length of the third square; The thickness of one dielectric block is greater than or equal to the thickness of the second dielectric block.
  • the side length of the first square is a, 1.5mm ⁇ a ⁇ 3.5mm; the side length of the second square is b, 1.3mm ⁇ b ⁇ 1.7mm; the thickness of the first dielectric block is h1, 1.1mm ⁇ h1 ⁇ 1.3mm; the thickness of the second dielectric block is h2, 0.5mm ⁇ h1 ⁇ 0.7mm.
  • the first dielectric block is a cylinder, and the orthographic projection of the first dielectric block on the metal backboard is a first circle; the combined dielectric block is a cylinder, and the combined dielectric block is placed on the metal backboard The orthographic projection of is the second circle.
  • the diameter of the first circle and the diameter of the second circle are c, 3.9mm ⁇ c ⁇ 4.1mm; the thickness of the first dielectric block and the thickness of the second dielectric block are h0, 1mm ⁇ h ⁇ 1.2mm.
  • the diameter of the first circle and the diameter of the second circle are c, 3.1mm ⁇ c ⁇ 4.5mm; the thickness of the first dielectric block is h1, 1mm ⁇ h1 ⁇ 1.2mm; The thickness of the second dielectric block is h2, 0.4mm ⁇ h2 ⁇ 0.9mm.
  • the first dielectric block is a regular hexagonal prism
  • the orthographic projection of the first dielectric block on the metal back plate is a first regular hexagon
  • the combined dielectric block is a regular hexagonal prism
  • the combined dielectric block is on the metal
  • the orthographic projection on the backplane is the second regular hexagon.
  • the side length of the first regular hexagon and the side length of the second regular hexagon are d, 2.2mm ⁇ d ⁇ 2.4mm; the thickness of the first dielectric block and the thickness of the second dielectric block h, 1mm ⁇ h ⁇ 1.2mm.
  • the side length of the first regular hexagon and the side length of the second regular hexagon are d, 1.8mm ⁇ d ⁇ 2.4mm; the thickness of the first dielectric block is h1, 1mm ⁇ h1 ⁇ 1.2mm; the thickness of the second dielectric block is h2, 0.4mm ⁇ h2 ⁇ 0.8mm.
  • the thickness of the metal back plate is h0, 0.016mm ⁇ h0 ⁇ 0.02mm.
  • the dielectric constants of the first dielectric block and the second dielectric block are p, 9 ⁇ p ⁇ 11.
  • the orthographic projection of each repeating unit on the metal backplane is a centrosymmetric structure.
  • the dielectric layer is attached to the surface of the metal backplane.
  • an electronic device including the above-mentioned artificial magnetic conductor.
  • the artificial magnetic conductor includes a laminated dielectric layer and a metal backplane, wherein the dielectric layer includes a repeating unit formed by a dielectric block, which can be generated when electromagnetic waves irradiate the artificial magnetic conductor. Electromagnetic resonance realizes zero-phase reflection of incident electromagnetic waves. Since the dielectric material is a non-metallic material, the manufacturing process of the dielectric layer is simple and can be made of materials such as plastic. For example, the dielectric layer can be printed directly with a 3D printer, and the cost is relatively low. Low.
  • Fig. 1 is a top view of the structure of an artificial magnetic conductor corresponding to a repeating unit in the embodiment of the present application;
  • Fig. 2 is the bottom view of structure in Fig. 1;
  • Fig. 3 is a side view of the structure in Fig. 1;
  • Fig. 4 is the three-dimensional schematic view of the structure in Fig. 1;
  • Fig. 5 is a top view of the structure of the artificial magnetic conductor corresponding to a plurality of repeating units in Fig. 1;
  • Fig. 6 is a three-dimensional schematic view of the structure in 5;
  • Fig. 7 is a simulation schematic diagram of the reflected electromagnetic wave amplitude curve and the reflected electromagnetic wave phase curve of the artificial magnetic conductor in Fig. 1 to Fig. 6;
  • Fig. 8 is a top view of another artificial magnetic conductor corresponding to a repeating unit structure in the embodiment of the present application.
  • Fig. 9 is a side view of the structure in Fig. 8.
  • Fig. 10 is a top view of the structure of the artificial magnetic conductor corresponding to a plurality of repeating units in Fig. 8;
  • Fig. 11 is a schematic diagram of simulation of a phase curve of reflected electromagnetic waves of the artificial magnetic conductor corresponding to Fig. 8 to Fig. 10 under four different structural designs;
  • Fig. 12 is a simulation schematic diagram of a phase curve of a reflected electromagnetic wave of the artificial magnetic conductor corresponding to Fig. 8 to Fig. 10 under four other different structural designs;
  • Fig. 13 is a top view of another artificial magnetic conductor corresponding to a repeating unit structure in the embodiment of the present application.
  • Figure 14 is a side view of the structure in Figure 13;
  • Fig. 15 is a top view of the structure of the artificial magnetic conductor corresponding to a plurality of repeating units in Fig. 13;
  • Fig. 16 is a three-dimensional schematic diagram of a structure in which the artificial magnetic conductor in Fig. 13 corresponds to a plurality of repeating units;
  • Fig. 17 is a simulation schematic diagram of the reflected electromagnetic wave amplitude curve and the reflected electromagnetic wave phase curve of the artificial magnetic conductor in Fig. 13 to Fig. 16;
  • Figure 18 is another side view of the structure in Figure 13;
  • Fig. 19 is a three-dimensional schematic diagram of another structure in which the artificial magnetic conductor in Fig. 13 corresponds to a plurality of repeating units;
  • Fig. 20 is a schematic diagram of a simulation of a reflected electromagnetic wave phase curve of the artificial magnetic conductor corresponding to Fig. 18 and Fig. 19 under four different structural designs;
  • Fig. 21 is a simulation schematic diagram of a phase curve of a reflected electromagnetic wave of the artificial magnetic conductor corresponding to Fig. 18 and Fig. 19 under four other different structural designs;
  • Fig. 22 is a top view of another artificial magnetic conductor corresponding to a repeating unit structure in the embodiment of the present application.
  • Figure 23 is a side view of the structure in Figure 22;
  • Fig. 24 is a top view of a structure in which the artificial magnetic conductor in Fig. 22 corresponds to a plurality of repeating units;
  • Fig. 25 is a three-dimensional schematic diagram of a structure in which the artificial magnetic conductor in Fig. 22 corresponds to a plurality of repeating units;
  • Fig. 26 is a simulation schematic diagram of the reflected electromagnetic wave amplitude curve and the reflected electromagnetic wave phase curve of the artificial magnetic conductor in Fig. 22 to Fig. 25;
  • Figure 27 is another side view of the structure in Figure 22;
  • Fig. 28 is a three-dimensional schematic diagram of another structure in which the artificial magnetic conductor in Fig. 22 corresponds to a plurality of repeating units;
  • Fig. 29 is a simulation schematic diagram of a reflected electromagnetic wave phase curve of the artificial magnetic conductor corresponding to Fig. 22, Fig. 24, Fig. 27 and Fig. 28 under four different structural designs;
  • FIG. 30 is a simulation diagram of a phase curve of reflected electromagnetic waves of the artificial magnetic conductor corresponding to FIG. 22 , FIG. 24 , FIG. 27 and FIG. 28 under four different structural designs.
  • the embodiment of the present application provides an artificial magnetic conductor, including: a stacked dielectric layer 1 and a metal backplane 2; the dielectric layer 1 includes a plurality of repeating units 10, and any repeating unit 10 has the same Each repeating unit 10 includes a first dielectric block 11 and a second dielectric block 12, and the second dielectric blocks 12 in any two adjacent repeating units 10 are connected to each other as a whole.
  • the structure filled with light color is the dielectric layer 1
  • the structure filled with dark color is the metal backplane 2 .
  • a dielectric is an insulator that can be electrically polarized. It is generally considered that a substance with a resistivity exceeding 10 ohm cm is a dielectric.
  • the embodiment of the present application does not limit the specific structure of the first dielectric block 11 and the second dielectric block 12, as long as the repeating unit 10 composed of the first dielectric block 11 and the second dielectric block 12 has the same structure, the dielectric
  • the layer 1 includes a plurality of repeating units 10, that is, the dielectric layer 1 is formed by periodically arranged dielectric block structures. Among them, the metal back plate 2 is used as a reflector.
  • the artificial magnetic conductor When the electromagnetic wave is irradiated on the surface of the artificial magnetic conductor, the artificial magnetic conductor can generate electromagnetic resonance inside each dielectric block and the edge of the adjacent dielectric block, for example, different frequency bands are generated in two frequency bands. Resonant mode, which in turn produces two different zero-phase reflection frequency bands.
  • the operating frequency of the artificial magnetic conductor is mainly determined by the size parameters of the first dielectric block 11 and the second dielectric block 12, and the specific number of repeating units 10 can be selected according to specific application scenarios.
  • the artificial magnetic conductor in the embodiment of the present application includes a laminated dielectric layer and a metal backplane, wherein the dielectric layer includes a repeating unit formed by a dielectric block, which can generate electromagnetic resonance when electromagnetic waves irradiate the artificial magnetic conductor to realize incident electromagnetic waves.
  • the dielectric material is a non-metallic material
  • the manufacturing process of the dielectric layer is simple, and can be made of materials such as plastic, for example, the dielectric layer can be printed directly with a 3D printer, and the cost is low.
  • each repeating unit 10 includes a first dielectric block 11 and multiple second dielectric blocks 12; in the same repeating unit 10, multiple second dielectric blocks 12 A medium block 12 surrounds the first medium block 11; in any two adjacent repeating units 10, at least one second medium block 12 in one of the repeating units 10 is connected to at least one second medium in the other repeating unit 10.
  • Block 12 is connected as one.
  • each repeating unit 10 includes a first dielectric block 11 and four second dielectric blocks 12, and the four second dielectric blocks in each repeating unit 10
  • the dielectric blocks 12 are respectively the first sub-dielectric block A1, the second sub-dielectric block A2, the third sub-dielectric block A3 and the fourth sub-dielectric block A4; multiple repeating units 10 are arranged in a matrix; any four adjacent
  • the repeating units 10 are respectively the first repeating unit 101, the second repeating unit 102, the third repeating unit 103 and the fourth repeating unit 104.
  • the first child of the first repeating unit 101 The dielectric block A1, the second sub-dielectric block A2 of the second repeating unit 102, the third sub-dielectric block A3 of the third repeating unit 103, and the fourth sub-dielectric block A4 of the fourth repeating unit 104 are connected as one to form a combined dielectric block A0, that is to say, the dielectric layer 1 includes two types of dielectric blocks, the first dielectric block 11 and the combined dielectric block A0, which are periodically arranged, and the structures of the first dielectric block 11 and the combined dielectric block A0 can be the same or different.
  • Block 11 and combined medium block A0 can be connected together or arranged at intervals.
  • the orthographic projection of the first dielectric block 11 on the metal backplane 2 is a first square F1
  • the orthographic projection of the second dielectric block 12 on the metal backplane 2 is The orthographic projection is the second square F2, the side length a of the first square F1 is not equal to the side length b of the second square F2; the orthographic projection of the combined dielectric block A0 on the metal back plate 2 is the third square F3. That is, both the first dielectric block 11 and the second dielectric block 12 are hexahedrons, and the composite dielectric block A0 composed of four hexahedral second dielectric blocks 12 is also a hexahedron.
  • the first square F1 is diagonally connected to each second square F2 and integrated; the first square F1
  • the side length a of is equal to the side length d of the third square F3.
  • the side length of the first square F1 is a, 2.9mm ⁇ a ⁇ 3.1mm; the thickness of the first dielectric block 11 and the thickness of the second dielectric block 12 The thickness is h, and 1.1 mm ⁇ h ⁇ 1.3 mm. It should be noted that, in the embodiment of the present application, the thickness refers to the direction perpendicular to the metal backplane 2 , that is, the z-axis direction in the figure.
  • the thickness of the metal back plate 2 is 0.018mm.
  • Zero-phase reflection working frequency bands are 20.78GHz ⁇ 30.27GHz, 36.73GHz ⁇ 40.06GHz respectively, corresponding to millimeter wave frequency band I (24.24GHz ⁇ 29.5GHz) and millimeter wave frequency band II (37.5GHz ⁇ 43GHz), it can be seen that the artificial magnetic conductor in the embodiment of the present application has a wide zero-phase reflection at the same time in the millimeter-wave frequency band I (24.24GHz-29.5GHz) and the millimeter-wave frequency band II (37.5GHz-43GHz) of 5G communication.
  • the thickness of the dielectric layer 1 in the artificial magnetic conductor is relatively thin, which is 1.2mm.
  • the operating frequency is 0.107 ⁇ , where ⁇ is the wavelength; the dual-frequency operating frequency band of the artificial magnetic conductor is relatively
  • the bandwidth is wide, respectively 35.4% and 9.1%.
  • the structure of the artificial magnetic conductor is simple, and the working frequency band can be designed by changing the structural parameters of the dielectric layer.
  • the dielectric layer with a pattern can be made by a relatively simple process, such as 3D printing.
  • the first square F1 and each second square F2 are arranged diagonally and at intervals; the first The side length a of the square F1 is greater than or equal to the side length d of the third square F3; the thickness h1 of the first dielectric block 11 is greater than or equal to the thickness h2 of the second dielectric block 12 .
  • the side length of the first square F1 is a, 1.5mm ⁇ a ⁇ 3.5mm; the side length of the second square F2 is b, 1.3 mm ⁇ b ⁇ 1.7mm; the thickness of the first dielectric block 11 is h1, 1.1mm ⁇ h1 ⁇ 1.3mm; the thickness of the second dielectric block 12 is h2, 0.5mm ⁇ h1 ⁇ 0.7mm.
  • the thickness h1 of the first dielectric block 11 is 1.2 mm
  • the thickness h2 of the second dielectric block 12 is 0.6 mm
  • the distance L of the blocks 12 in the x-direction is 0.25 mm.
  • the side length a of the first square F1 and the side length b of the second square F2 are changed at the same time, so that a and b are negatively correlated, and the frequency band I ( 24.24GHz ⁇ 29.5GHz) independent tuning, that is, to independently adjust the zero-phase reflection frequency point of frequency band I (24.24GHz ⁇ 29.5GHz), and the zero-phase reflection point of frequency band II (37.5GHz ⁇ 43GHz) is basically unchanged, which is different in Figure 11
  • the zero-phase reflection frequency point of frequency band II (37.5GHz ⁇ 43GHz) will gradually decrease; similarly, if a remains unchanged and b increases, the same The zero-phase reflection frequency point of frequency band II (37.5GHz-43GHz) will gradually decrease; on the contrary, if one of a and b remains unchanged and the other decreases, the zero-phase reflection frequency point of frequency band II (37.5GHz-43GHz) will gradually decrease.
  • the reflection frequency will gradually increase.
  • the first dielectric block 11 is a cylinder
  • the orthographic projection of the first dielectric block 11 on the metal back plate 2 is a first circle E1
  • the second The orthographic projection of the dielectric block 12 on the metal back plate 2 is fan-shaped, that is, the second dielectric block 12 is a quarter cylinder; four adjacent second dielectric blocks 12 form a combined dielectric block A0, that is, the combined dielectric block A0 is a cylinder, and the orthographic projection of the composite dielectric block A0 on the metal back plate 2 is a second circle E2.
  • the diameter of the first circle E1 and the diameter of the second circle E2 are c, 3.9mm ⁇ c ⁇ 4.1mm; the first dielectric block 11 Thickness and thickness of the second dielectric block 12 is h, 1mm ⁇ h ⁇ 1.2mm.
  • the dielectric constant of the dielectric layer 1 is 10
  • the first dielectric block 11 and the combined dielectric block A0 are complete cylinders with a diameter of 4 mm and a thickness of 1.1 mm
  • the metal back The thickness of the plate 2 is 0.018mm.
  • Zero phase reflection working frequency bands are 21.74GHz ⁇ 29.48GHz, 36.82GHz ⁇ 41.28GHz respectively, corresponding to millimeter wave frequency band I (24.24GHz ⁇ 29.5GHz) and millimeter wave frequency band II (37.5GHz ⁇ 43GHz), it can be seen that the artificial magnetic conductor in the embodiment of the present application has a wide zero-phase reflection at the same time in the millimeter-wave frequency band I (24.24GHz-29.5GHz) and the millimeter-wave frequency band II (37.5GHz-43GHz) of 5G communication. band.
  • the thickness of the dielectric layer 1 in the artificial magnetic conductor is relatively thin, which is 1.1mm.
  • the operating frequency is 0.098 ⁇ , where ⁇ is the wavelength; the dual-frequency operating frequency band of the artificial magnetic conductor is relatively The bandwidth is wide, respectively 28.8% and 11.3%.
  • the structure of the artificial magnetic conductor is simple, and the working frequency band can be designed by changing the structural parameters of the dielectric layer.
  • the dielectric layer with a pattern can be made by a relatively simple process, such as 3D printing.
  • the diameter of the first circle E1 and the diameter of the second circle E2 are c, 3.1mm ⁇ c ⁇ 4.5mm;
  • the thickness of the first dielectric block 11 is h1, 1mm ⁇ h1 ⁇ 1.2mm;
  • the thickness of the second dielectric block 12 is h2, 0.4mm ⁇ h2 ⁇ 0.9mm.
  • the first dielectric block 11 is a regular hexagonal prism
  • the orthographic projection of the first dielectric block 11 on the metal back plate 2 is a first regular hexagon G1
  • the second dielectric block 12 is a quarter of a regular hexagonal prism; four adjacent second dielectric blocks 12 form a combined dielectric block A0, which is a regular hexagonal prism, and the combined dielectric block A0 is on the metal backplane 2
  • the orthographic projection of is the second regular hexagon G2.
  • the side length of the first regular hexagon G1 and the side length of the second regular hexagon G2 are d, 2.2mm ⁇ d ⁇ 2.4mm; the first The thickness of the dielectric block 11 and the thickness of the second dielectric block 12 are h, 1mm ⁇ h ⁇ 1.2mm.
  • the zero-phase reflection of the incident electromagnetic wave can be realized in two frequency bands respectively.
  • Figure 26 based on the reflected electromagnetic wave amplitude curve (solid line) and reflected electromagnetic wave phase curve (dashed line) obtained by the artificial magnetic conductor simulation, there are zero-phase reflection frequency points at 27.43GHz and 39.43GHz.
  • Zero-phase reflection working frequency bands are 23.68GHz ⁇ 30.11GHz, 37.36GHz ⁇ 41.02GHz respectively, corresponding to millimeter wave frequency band I (24.24GHz ⁇ 29.5GHz) and millimeter wave frequency band II (37.5GHz ⁇ 43GHz).
  • the artificial magnetic conductor in the embodiment of the present application has a wide zero-phase reflection frequency band at the same time in the millimeter-wave frequency band I (24.24GHz-29.5GHz) and the millimeter-wave frequency band II (37.5GHz-43GHz) of 5G communication.
  • the thickness of the dielectric layer 1 in the artificial magnetic conductor is relatively thin, which is 1.1mm.
  • the operating frequency is 0.101 ⁇ , where ⁇ is the wavelength; the dual-frequency operating frequency band of the artificial magnetic conductor is relatively The bandwidth is wide, respectively 23.44% and 9.28%.
  • the structure of the artificial magnetic conductor is simple, and the working frequency band can be designed by changing the structural parameters of the dielectric layer.
  • the dielectric layer with a pattern can be made by a relatively simple process, such as 3D printing.
  • the side length of the first regular hexagon G1 and the side length of the second regular hexagon G2 are d, and 1.8mm ⁇ d ⁇ 2.4mm;
  • the thickness of the first dielectric block 11 is h1, 1mm ⁇ h1 ⁇ 1.2mm;
  • the thickness of the second dielectric block 12 is h2, 0.4mm ⁇ h2 ⁇ 0.8mm.
  • the orthographic projection of each repeating unit 10 on the metal back plate 2 is a centrosymmetric structure, and under this structure, the artificial magnetic conductor has a polarization-insensitive characteristics.
  • the dielectric layer 1 is attached to the surface of the metal backplane 2, that is, there is no gap between the dielectric layer 1 and the metal backplane 2. In other possible implementation manners , there may also be a certain gap between the dielectric layer 1 and the metal backplane 2 .
  • the embodiment of the present application does not limit the structure of the first dielectric block 11 and the combined dielectric block A0, and the above embodiments only illustrate the three structures of hexahedron, cylinder and regular hexagonal prism;
  • the embodiment of the application does not limit the working frequency band of the artificial magnetic conductor.
  • the above embodiments only illustrate that the artificial magnetic conductor can realize the zero-phase reflection of the incident electromagnetic wave in two frequency bands respectively.
  • the artificial magnetic The conductor for example, can realize zero-phase reflection of incident electromagnetic waves in three or more frequency bands.
  • An embodiment of the present application further provides an electronic device, including the artificial magnetic conductor in any of the foregoing embodiments.
  • the specific structure and principle of the artificial magnetic conductor are the same as those of the above-mentioned embodiments, and will not be repeated here.
  • Electronic devices may be cell phones, routers, tablets, personal computers (PCs), personal digital assistants (PDAs), smart watches, netbooks, wearable electronics, augmented reality (AR) equipment, virtual reality (VR) equipment, in-vehicle equipment, drone equipment, smart cars, smart audio, robots, smart glasses, etc.
  • the artificial magnetic conductor in the embodiment of the present application can be applied to an antenna of an electronic device and used as a floor of the antenna, and the height of the antenna can be reduced through the zero-phase reflection characteristic of the artificial magnetic conductor.
  • the artificial magnetic conductor can be specifically applied to millimeter wave antennas or other frequency band antennas.
  • artificial magnetic conductors can also be applied to devices related to electromagnetic waves such as absorbers.
  • "at least one” means one or more, and “multiple” means two or more.
  • “And/or” describes the association relationship of associated objects, indicating that there may be three kinds of relationships, for example, A and/or B may indicate that A exists alone, A and B exist simultaneously, or B exists alone. Among them, A and B can be singular or plural.
  • the character “/” generally indicates that the contextual objects are an “or” relationship.
  • “At least one of the following” and similar expressions refer to any combination of these items, including any combination of single items or plural items.
  • At least one of a, b, and c may represent: a, b, c, a-b, a-c, b-c, or a-b-c, wherein a, b, and c may be single or multiple.

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Abstract

Des modes de réalisation de la présente invention concernent le domaine technique des ondes électromagnétiques, et fournissent un conducteur magnétique artificiel et un dispositif électronique. La présente invention est simple à fabriquer et relativement peu coûteuse. Le conducteur magnétique artificiel comprend : une couche diélectrique et un fond de panier métallique qui sont empilés. La couche diélectrique comprend une pluralité d'unités de répétition. Toutes les unités de répétition ont la même structure. Chaque unité de répétition comprend un premier bloc de milieu et un second bloc de milieu. Les seconds blocs de milieu dans deux unités de répétition adjacentes quelconques sont reliés l'un à l'autre dans son ensemble entier.
PCT/CN2022/105950 2021-07-23 2022-07-15 Conducteur magnétique artificiel et dispositif électronique Ceased WO2023001067A1 (fr)

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CN202110833886.8A CN115693170B (zh) 2021-07-23 2021-07-23 人工磁导体和电子设备

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