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WO2023076349A1 - Masque de dépôt à motifs formé à l'aide d'un polymère dispersé dans un solvant liquide - Google Patents

Masque de dépôt à motifs formé à l'aide d'un polymère dispersé dans un solvant liquide Download PDF

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Publication number
WO2023076349A1
WO2023076349A1 PCT/US2022/047842 US2022047842W WO2023076349A1 WO 2023076349 A1 WO2023076349 A1 WO 2023076349A1 US 2022047842 W US2022047842 W US 2022047842W WO 2023076349 A1 WO2023076349 A1 WO 2023076349A1
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Prior art keywords
layer
light
emitting devices
substrate
material layer
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Ceased
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PCT/US2022/047842
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English (en)
Inventor
Jens Meyer
Marinus Johannes Petrus Maria Van Gerwen
Ronja MISSONG
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Lumileds LLC
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Lumileds LLC
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Publication date
Priority claimed from US17/973,007 external-priority patent/US12408496B2/en
Application filed by Lumileds LLC filed Critical Lumileds LLC
Priority to CN202280086903.9A priority Critical patent/CN118476044A/zh
Priority to EP22818518.7A priority patent/EP4423820B1/fr
Publication of WO2023076349A1 publication Critical patent/WO2023076349A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Definitions

  • the invention relates generally to processes for fabricating light-emitting diodes or phosphor-converted light-emitting diodes.
  • LEDs Semiconductor light-emitting diodes and laser diodes
  • the emission spectrum of an LED typically exhibits a single narrow peak at a wavelength determined by the structure of the device and by the composition of the semiconductor materials from which it is constructed.
  • LEDs may be designed to operate at ultraviolet, visible, or infrared wavelengths.
  • LEDs may be combined with one or more wavelength converting materials (generally referred to herein as “phosphors”) that absorb light emitted by the LED and in response emit light of a longer wavelength.
  • phosphors wavelength converting materials
  • the fraction of the light emitted by the LED that is absorbed by the phosphors depends on the amount of phosphor material in the optical path of the light emitted by the LED, for example on the concentration of phosphor material in a phosphor layer disposed on or around the LED and the thickness of the layer.
  • Phosphor-converted LEDs may be designed so that all of the light emitted by the LED is absorbed by one or more phosphors, in which case the emission from the pcLED is entirely from the phosphors.
  • the phosphor may be selected, for example, to emit light in a narrow spectral region that is not efficiently generated directly by an LED.
  • pcLEDs may be designed so that only a portion of the light emitted by the LED is absorbed by the phosphors, in which case the emission from the pcLED is a mixture of light emitted by the LED and light emitted by the phosphors.
  • LED, phosphors, and phosphor composition such a pcLED may be designed to emit, for example, white light having a desired color temperature and desired color-rendering properties.
  • Multiple LEDs can be formed together on a single substrate to form an array.
  • Such arrays can be employed to form active illuminated displays, such as those employed in smartphones and smart watches, computer or video displays, or signage.
  • An array having one or several or many individual devices per millimeter e.g., device pitch of about a millimeter, a few hundred microns, or less than 100 microns, and spacing between adjacent devices less than 100 microns or only a few tens of microns or less
  • miniLED array or a microLED array typically is referred to as a miniLED array or a microLED array (alternatively, a pLED array).
  • Such mini- or microLED arrays can in many instances also include phosphor converters as described above; such arrays can be referred to as pc-mini- or pc-microLED arrays.
  • An inventive method comprises forming, on a substrate or on one or more semiconductor light-emitting devices mounted on or formed on the substrate, a polymer dispersion layer that comprises polymer particles dispersed in a liquid solvent.
  • the inventive method can further include, after forming the polymer dispersion layer, drying and curing the polymer dispersion layer to form a cured polymer layer.
  • the inventive method can further include, after curing and drying, with the cured polymer layer being present on only one or more selected, masked areas of the substrate or light-emitting devices, and with one or more other areas of the substrate or light-emitting devices lacking the cured polymer layer and remaining exposed, forming a material layer on at least the one or more exposed areas.
  • the inventive method can further include, after forming the material layer, removing the cured polymer layer from the one or more masked areas, leaving the material layer on the one or more exposed areas.
  • the polymer dispersion layer is formed on only the masked areas before being dried and cured; in some other examples, the polymer dispersion layer can be formed on both masked and exposed areas before being dried and cured, and then portions of the cured layer can be removed to form exposed areas of the substrate or light-emitting devices while leaving other portions of the cured polymer layer on the masked areas.
  • the material layer is formed on only the exposed areas; in some other examples, the material layer is formed on both the masked and exposed areas, and removal of the cured polymer layer from the masked areas also removes corresponding portions of the material layer from the masked areas while leaving other corresponding portions of the material layer on the exposed areas.
  • Fig. 1 shows a schematic cross-sectional view of an example pcLED.
  • Figs 2A and 2B show, respectively, cross-sectional and top schematic views of an example array of pcLEDs.
  • Fig. 2C shows a top schematic view of an example miniLED or microLED array and an enlarged section of 3x3 LEDs of the array.
  • Fig. 2D shows a perspective view of several LEDs of an example pc-miniLED or pc-microLED array monolithically formed on a substrate.
  • Fig. 3A shows a schematic top view an example electronics board on which an array of pcLEDs may be mounted, and Fig. 3B similarly shows an example array of pcLEDs mounted on the electronic board of Fig. 3A.
  • FIG. 4A shows a schematic cross-sectional view of an example array of pcLEDs arranged with respect to waveguides and a projection lens.
  • Fig. 4B shows an arrangement similar to that of Figure 4A, without the waveguides.
  • Figs. 5A through 5C show schematic cross-sectional views of example LEDs comprising a semiconductor LED and a particle layer.
  • FIGs. 6A through 6C illustrate schematically an example inventive process.
  • FIGS. 7A through 7C illustrate schematically an example inventive process.
  • Figure 1 shows an example of an individual pcLED 100 comprising a semiconductor diode structure 102 disposed on a substrate 104, together considered herein an “LED”, and a wavelength converting structure (e.g., phosphor layer) 106 disposed on the LED.
  • Semiconductor diode structure 102 typically comprises an active region disposed between n-type and p-type layers. In some examples the combined thickness of those layers can be less than about 5.0 microns thick.
  • Application of a suitable forward bias across the diode structure results in emission of light from the active region.
  • the wavelength of the emitted light is determined by the composition and structure of the active region.
  • the LED may be, for example, a Ill-Nitride LED that emits blue, violet, or ultraviolet light. LEDs formed from any other suitable material system and that emit any other suitable wavelength of light may also be used.
  • Other suitable material systems may include, for example, 11 l-Phosphide materials, 11 l-Arsenide materials, other binary, ternary, or quaternary alloys of gallium, aluminum, indium, nitrogen, phosphorus, or arsenic, or ll-VI materials.
  • any suitable phosphor materials may be used for or incorporated into the wavelength converting structure 106, depending on the desired optical output from the pcLED.
  • Figures 2A-2B show, respectively, cross-sectional and top views of an array 200 of pcLEDs 100, each including a phosphor pixel 106, disposed on a substrate 202.
  • Such an array may include any suitable number of pcLEDs arranged in any suitable manner. In the illustrated example the array is depicted as formed monolithically on a shared substrate, but alternatively an array of pcLEDs may be formed from separate individual pcLEDs.
  • Substrate 202 may optionally comprise CMOS circuitry for driving the LED, and may be formed from any suitable materials.
  • a pcLED array 200 may be mounted on an electronics board 300 comprising a power and control module 302, a sensor module 304, and an LED attach region 306.
  • Power and control module 302 may receive power and control signals from external sources and signals from sensor module 304, based on which power and control module 302 controls operation of the LEDs.
  • Sensor module 304 may receive signals from any suitable sensors, for example from temperature or light sensors.
  • pcLED array 200 may be mounted on a separate board (not shown) from the power and control module and the sensor module.
  • Individual pcLEDs may optionally incorporate or be arranged in combination with a lens or other optical element located adjacent to or disposed on the phosphor layer. Such an optical element, not shown in the figures, may be referred to as a “primary optical element”.
  • a pcLED array 200 (for example, mounted on an electronics board 300) may be arranged in combination with secondary optical elements such as waveguides, lenses, or both for use in an intended application.
  • light emitted by pcLEDs 100 is collected by waveguides 402 and directed to projection lens 404.
  • Projection lens 404 may be a Fresnel lens, for example. This arrangement may be suitable for use, for example, in automobile headlights.
  • FIG. 4B light emitted by pcLEDs 100 is collected directly by projection lens 404 without use of intervening waveguides.
  • This arrangement may particularly be suitable when pcLEDs can be spaced sufficiently close to each other, and may also be used in automobile headlights as well as in camera flash applications.
  • a miniLED or microLED display application may use similar optical arrangements to those depicted in Figs. 4A-4B, for example.
  • any suitable arrangement of optical elements may be used in combination with the pcLEDs described herein, depending on the desired application.
  • Fig. 1A may include, over 10,000 pixels in any applicable arrangement such as a 100x100 matrix, a 200x50 matrix, a symmetric matrix, a non-symmetric matrix, or the like. It will also be understood that multiple sets of pixels, matrixes, and/or boards may be arranged in any applicable format to implement the embodiments disclosed herein.
  • Figs. 2A and 2B show a 3x3 array of nine pcLEDs
  • such arrays may include for example on the order of 10 2 , 10 3 , 10 4 , or more LEDs, e.g., as illustrated schematically in Fig, 2C.
  • Individual LEDs 911 (/.e., pixels) may have widths wi (e.g., side lengths) in the plane of the array 900, for example, less than or equal to 1 .0 millimeter (mm), less than or equal to 0.5 mm, less than or equal to 0.10 mm, or less than or equal to 0.05 mm.
  • LEDs 911 in the array 900 may be spaced apart from each other by streets, lanes, or trenches 913 having a width W2 in the plane of the array 900 of, for example, a few tenths of a millimeter, less than or equal to 0.10 mm, less than or equal to 0.05 mm, less than or equal to 0.020 mm, less than or equal to 0.010 mm, or less than or equal to 0.005 mm.
  • the pixel pitch Di is the sum of wi and W2.
  • LEDs having dimensions wi in the plane of the array are typically referred to as microLEDs, and an array of such microLEDs may be referred to as a microLED array.
  • LEDs having dimensions wi in the plane of the array e.g., side lengths of between about 0.10 millimeters and about 1 .0 millimeters are typically referred to as miniLEDs, and an array of such miniLEDs may be referred to as a miniLED array.
  • An array of LEDs, miniLEDs, or microLEDs, or portions of such an array may be formed as a segmented monolithic structure in which individual LED pixels are electrically isolated from each other by trenches and or insulating material.
  • Figure 2D shows a perspective view of an example of such a segmented monolithic array 1100. Pixels in this array are separated by trenches 1130 which are filled to form n-contacts 1140.
  • the monolithic structure is grown or disposed on a substrate 1114. Each pixel includes a p-contact 1113, a p-GaN semiconductor layer 1112, an active region 1111 , and an n-GaN semiconductor layer 1110.
  • a wavelength converter material 1117 may be deposited on the semiconductor layer 1110 (or other applicable intervening layer).
  • Passivation layers 1115 may be formed within the trenches 1130 to separate at least a portion of the n-contacts 1140 from one or more layers of the semiconductor.
  • the n-contacts 1140, or other material within the trenches, may extend into the converter material 1117 such that the n-contacts 1140 or other structures or materials provide complete or partial optical isolation barriers 1120 between the pixels.
  • the individual LEDs (pixels) in an LED array may be individually addressable, may be addressable as part of a group or subset of the pixels in the array, or may not be addressable.
  • light-emitting pixel arrays are useful for any application requiring or benefiting from fine-grained intensity, spatial, and temporal control of light distribution. These applications may include, but are not limited to, precise special patterning of emitted light from pixel blocks or individual pixels. Depending on the application, emitted light may be spectrally distinct, adaptive over time, and/or environmentally responsive.
  • the light-emitting pixel arrays may provide preprogrammed light distribution in various intensity, spatial, or temporal patterns. The emitted light may be based at least in part on received sensor data and may be used for optical wireless communications. Associated electronics and optics may be distinct at a pixel, pixel block, or device level.
  • one or more layers may be desirable to form one or more layers on portions of one or more LEDs or on portions of a substrate on which one or more LEDs are formed or mounted.
  • such layers are formed in a spatially selective manner, with certain areas of the LEDs and/or substrate being covered while other areas remain exposed.
  • Situations in which such spatially selective layer formation might be desirable include, e.g., masked deposition, growth, or formation of layers or structures on the LEDs and/or the substrate.
  • a mask layer can be formed in a spatially selective manner to cover certain areas where deposition or growth is not desired. After the growth or deposition process, the mask layer can be removed, leaving the newly formed layer or structure on only those areas that had been left exposed by the mask.
  • Such a masked deposition process might be used, e.g., to form or bond the phosphor converter layers 106 on light output surfaces of the LEDs 102 without also forming or bonding material onto other areas, such as on the back side of the substrate 202 or on integrated circuitry or electrical traces (not shown) on the substrate 202.
  • a masked deposition process might be used, e.g., to form or bond the phosphor converter layers 106 on light output surfaces of the LEDs 102 without also forming or bonding material onto other areas, such as on the back side of the substrate 202 or on integrated circuitry or electrical traces (not shown) on the substrate 202.
  • a masked deposition process might be used, e.g., to form or bond the phosphor converter layers 106 on light output surfaces of the LEDs 102 without also forming or bonding material onto other areas, such as on the back side of the substrate 202 or on integrated circuitry or electrical traces (not shown) on the substrate 202.
  • a thin layer of dielectric material 505B can be deposited onto a layer of micron-scale particles 505A to bond the particles to each other and to the LEDs 102 (made up of layers 102A/B/C with an output surface 102D; substrate 202 not shown).
  • optically scattering or luminescent particles can be employed.
  • the resulting particle layer 505 can bind each LED 102 to a phosphor converter 106 or other structure (e.g., as in Fig. 5B), or can serve as the phosphor converter (e.g., as in Fig. 5A).
  • the particles bound to the LEDs with the dielectric layer can act as an optical coupling layer (e.g., as in Fig.
  • any one or more suitable materials can be employed for the particles 505A (e.g., glass, ceramic, crystalline or polycrystalline, and so forth) or for the thin dielectric layer 505B (e.g., one or more metal or semiconductor oxides, such as AI2O3, HfO2, SiO2, Ga2Oa, GeO2, SnO2, CrO2, TiO2, Ta2Os, Nb20s, V2O5, Y2O3, or ZrO2).
  • the particles 505A can be sub-micron to micron scale, e.g., being characterized by a D50 (i.e., median transverse dimension) greater than about 0.10 pm and less than about 20 pm.
  • the particles 505A can be applied to the light output surface 102D in any suitable way, such as by spray-coating, sedimentation, and so forth.
  • the coating layer 505B is then deposited onto the particles 505A and portions of the light output surface 102D (i.e., those left exposed by any mask layer that is present).
  • a conformal deposition process can be used to deposit the coating layer 505B, so that it coats all sides of the particles 505A while remaining sufficiently thin (e.g., less than about 0.30 pm); if allowed to progress, the deposited coating layer material 505B can fill voids between the particles 505A.
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • a typical ALD reaction is split into (at least) two parts, one involving an oxide precursor (e.g., metal or semiconductor halides, amides, alkyl amides, or alkoxides, or other metal, semiconductor, or organometallic compounds) and the other involving an oxygen source (e.g., water, ozone, or other suitable oxygen source). Alternating those steps and purging the reactor after each step lead to formation of atomic layers (or monolayers) due to the self-limiting nature of the surface reaction.
  • the ALD sequence can be tailored in any suitable way to yield particle layer 505 having desired composition, spatial properties, or optical properties.
  • a protection layer (not shown) can be formed on the LED 102 before formation of the particle layer 505, to protect the LED output surface 102D from potential degradation by exposure to precursors or reagents employed in the formation of the coating layer 505B.
  • the protection layer (if present) and the coating layer can be formed at temperatures less than about 150°C (e.g., if some or all of the electronic components on the substrate 202 cannot tolerate excessive heating).
  • the device 600 generically represents one or more light-emitting devices (e.g., LEDs or laser diodes) formed on or mounted on a substrate.
  • the device 600 can be arranged in any suitable way, including, e.g., any of the arrangements of Figs. 2A-2D, 3A, 3B, 4A, 4B, or 5A-5C.
  • a layer formed “on at least portions of the device 600” is formed on at least portions of the lightemitting devices, on at least portions of the substrate (in some instances including some or all of its back surface, opposite the light-emitting devices), or both.
  • An inventive method includes forming on at least portions of the device 600 a polymer dispersion layer that comprises polymer particles dispersed in a liquid solvent. After forming the polymer dispersion layer, the polymer dispersion layer is dried (e.g., by solvent evaporation) and cured (e.g., by further polymerization or cross-linking) to form a cured polymer layer 620.
  • the cured polymer layer 620 is present on only one or more selected, masked areas 600M of the device 600, with one or more other areas 600E of the device 600 lacking the cured polymer layer 620 and remaining exposed (e.g., as in Figs. 6A and 7A).
  • the polymer dispersion layer is formed on only the masked areas 600M (e.g., by spatially selective dispensing, ink-jet printing, screen printing, slot-die coating, or doctorblade coating) before being dried and cured to form the cured polymer layer 620 on only those masked areas 600M.
  • the polymer dispersion layer can be formed initially on the entire device 600 (e.g., by dispensing, spin coating, slot-die coating, or doctor-blade coating) before being dried and cured; after drying and curing, portions of the cured polymer layer can be removed to form the exposed areas 600E while leaving the masked areas 600M covered by the cured polymer layer 620.
  • a material layer 630 can be formed on at least the exposed areas 600E (e.g., as in Figs. 6B and 7B).
  • material layers 630 that can be formed, and processes for such layer formation (e.g., deposition or growth), are described above; any suitable material layer 630 can be formed using any suitable process for formation.
  • the material layer 630 can be a single layer less than about 0.30 pm thick or less than about 0.10 pm thick (e.g., formed by ALD or CVD as described above); in some examples the material layer 630 can be a layer of particles one or several microns thick or more bound by a thin dielectric layer (e.g., as in Figs. 5A-5C).
  • the cured polymer layer 620 can be removed from the one or more masked areas 600M, leaving the material layer 630 on only the one or more exposed areas 600E (e.g., as in Figs. 6C and 7C). In some examples (e.g., as in Fig.
  • the material layer 630 forms initially on the exposed areas 600E and also on the cured polymer layer 620 covering the masked areas 600M. Removal of the cured polymer layer 620 from the masked areas 600M also removes those portions of the material layer 630 formed on the cured polymer layer 620, leaving other portions of the material layer 630 on only the exposed areas 600E (as in Fig. 6C). In some other examples (e.g., as in Fig. 7B), the material layer 630 forms on only the exposed areas 600E and not on the cured polymer layer covering the masked areas 600M. Such a scenario might occur, e.g., if the cured polymer layer 620 is relatively inert or unreactive with respect to the growth, deposition, or other process used to form the material layer 630.
  • the liquid solvent can include any one or more liquids suitable for dispersing the polymer particles and for enabling drying (e.g., solvent evaporation) and curing (e.g., by further polymerization or cross-linking) of the polymer dispersion layer to form the cured polymer layer 620.
  • the liquid solvent of the polymer dispersion layer can include water; in some examples the resulting aqueous polymer dispersion can be a natural or synthetic latex.
  • the liquid solvent can include one or more nonaqueous solvents (polar or nonpolar); in some of those examples the liquid solvent can also exclude water.
  • the polymer dispersion layer and the cured polymer layer 620 can include polyisoprene (i.e., polymerized 2-methyl-1 ,3-butadiene, also known as cis- 1 ,4-polyisoprene). Other suitable polymers can be employed.
  • polyisoprene i.e., polymerized 2-methyl-1 ,3-butadiene, also known as cis- 1 ,4-polyisoprene.
  • Other suitable polymers can be employed.
  • the polymer dispersion layer can include one or more cross-linking agents. In some examples, the polymer dispersion layer can include one or more heat-resistant compounds. In some examples, the cured polymer layer 620 can withstand a temperature greater than about 100°C, greater than about 150°C, greater than about 200°C, or greater than about 250°C. In some examples, the polymer dispersion layer can include one or more chemical-resistant compounds. In some examples the cured polymer layer can be chemically resistant to one or more cleaning chemicals, one or more ALD reagents, one or more CVD reagents, or one or more dry or wet etchants).
  • the cured polymer layer 620 can be greater than about 1 .0 pm, about 2.0 pm thick, or about 5 pm thick; in some examples, the cured polymer layer 620 can be less than about 0.20 mm thick, less than about 0.15 mm thick, or less than about 0.10 mm thick.
  • the cured polymer layer 620 can be removed by peeling off of the one or more masked areas 600M (e.g., by grasping and pulling with tweezers or other gripping hardware or implement). In some examples, removal of the cured polymer layer 620 can include treatment by one or more solvents (e.g., one or more organic solvents).
  • solvents e.g., one or more organic solvents
  • Example 1 A method comprising forming, on a substrate or on one or more semiconductor light-emitting devices mounted on or formed on the substrate, a polymer dispersion layer that comprises polymer particles dispersed in a liquid solvent.
  • Example 2 The method of Example 1 further comprising, after forming the polymer dispersion layer, drying and curing the polymer dispersion layer to form a cured polymer layer.
  • Example 3 The method of Example 2 further comprising, after curing and drying, with the cured polymer layer being present on only one or more selected, masked areas of the substrate or of the one or more light-emitting devices, and with one or more other areas of the substrate or of the one or more light-emitting devices lacking the cured polymer layer and remaining exposed, forming a material layer on at least the one or more exposed areas of the substrate or of the one or more light-emitting devices.
  • Example 4 The method of Example 3 further comprising, after forming the material layer, removing the cured polymer layer from the one or more masked areas, leaving the material layer on only the one or more exposed areas.
  • Example 5 The method of any one of Examples 2 through 4, the polymer dispersion layer being formed on only the masked areas before being dried and cured.
  • Example 6 The method of Example 5, the polymer dispersion layer being formed on only the masked areas by spatially selective dispensing, ink-jet printing, screen printing, slot-die coating, or doctor-blade coating.
  • Example 7 The method of any one of Examples 2 through 4, the polymer dispersion layer being formed on both masked and exposed areas before being dried and cured, the method further comprising removing portions of the cured layer, after the polymer dispersion layer is dried and cured, to form the exposed areas while leaving other portions of the cured polymer layer on the masked areas.
  • Example 8 The method of Example 7, the polymer dispersion layer being formed by dispensing, spin coating, slot-die coating, or doctor-blade coating.
  • Example 9 The method of any one of Examples 3 through 8, the material layer being formed on only the exposed areas.
  • Example 10 The method of any one of Examples 4 through 8, the material layer being formed on both the masked and exposed areas, and removal of the cured polymer layer from the masked areas also removes corresponding portions of the material layer from the masked areas while leaving other corresponding portions of the material layer on the exposed areas.
  • Example 11 The method of any one of Examples 1 through 10, the liquid solvent including water.
  • Example 12 The method of any one of Examples 1 through 11 , the liquid solvent including one or more nonaqueous solvents.
  • Example 13 The method of any one of Examples 1 through 10, the liquid solvent including one or more nonaqueous solvents and excluding water.
  • Example 14 The method of any one of Examples 1 through 13, the polymer dispersion layer including a natural or synthetic latex.
  • Example 15 The method of any one of Examples 1 through 14, the polymer dispersion layer or the cured polymer layer including c/s-1 ,4-polyisoprene.
  • Example 16 The method of any one of Examples 1 through 15, the polymer dispersion layer including one or more cross-linking agents.
  • Example 17 The method of any one of Examples 4 through 16, the cured polymer layer being removed by peeling off of the one or more masked areas.
  • Example 18 The method of any one of Examples 4 through 17, removal of the cured polymer layer including treatment by one or more solvents.
  • Example 19 The method of any one of Examples 2 through 18, the cured polymer layer being (i) greater than about 1 .0 pm thick, about 2.0 pm thick, or about 5 pm thick, or (ii) less than about 0.20 mm thick, less than about 0.15 mm thick, or less than about 0.10 mm thick.
  • Example 20 The method of any one of Examples 1 through 19, the polymer dispersion layer including one or more heat-resistant compounds.
  • Example 21 The method of any one of any one of Examples 2 through 20, the cured polymer layer being able to withstand a temperature greater than about 100°C, greater than about 150°C, greater than about 200°C, or greater than about 250°C.
  • Example 22 The method of any one of Examples 1 through 21 , the polymer dispersion layer including one or more chemical-resistant compounds.
  • Example 23 The method of any one of Examples 2 through 22, the cured polymer layer being chemically resistant to one or more cleaning chemicals, one or more atomic layer deposition (ALD) reagents, one or more chemical vapor deposition (CVD) reagents, or one or more dry or wet etchants.
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • Example 24 The method of any one of Examples 1 through 23, the one or more semiconductor light-emitting devices including one or more lll-V semiconductor materials, including one or more binary, ternary, or quaternary alloys of gallium, aluminum, indium, nitrogen, phosphorus, or arsenic.
  • Example 25 The method of any one of Examples 3 through 24, forming the material layer including at least one substantially conformal deposition process.
  • Example 26 The method of any one of Examples 3 through 25, forming the material layer including at least one atomic layer deposition (ALD) process or at least one chemical vapor deposition (CVD) process.
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • Example 27 The method of any one of Examples 3 through 26, the material layer including one or more metal oxides or semiconductor oxides.
  • Example 28 The method of Example 27, precursors of the one or more metal or semiconductor oxides of the material layer including one or more metal or semiconductor halides, amides, alkyl amides, or alkoxides, or organometallic compounds.
  • Example 29 The method of any one of Examples 27 or 28: (i) the material layer including one or more materials selected from a group consisting of AI2O3, HfO2, SiO2, Ga2Oa, GeO2, SnO2, CrO2, Nb20s, TiO2, Ta2Os, V2O5, Y2O3, and ZrO2, and (ii) each light-emitting device including one or more of GaN, AIN, AIGaN, GaP, AIGaP, or AllnGaP.
  • the material layer including one or more materials selected from a group consisting of AI2O3, HfO2, SiO2, Ga2Oa, GeO2, SnO2, CrO2, Nb20s, TiO2, Ta2Os, V2O5, Y2O3, and ZrO2, and (ii) each light-emitting device including one or more of GaN, AIN, AIGaN, GaP, AIGaP, or AllnGaP.
  • Example 30 The method of any one of Examples 27 through 29, the material layer including AI2O3.
  • Example 31 The method of Example 30, the material layer precursors including one or more of trimethylaluminum (AI(CH3)3) or dimethylaluminum hydride (HAI(CH 3 )2).
  • AI(CH3)3 trimethylaluminum
  • HAI(CH 3 )2 dimethylaluminum hydride
  • Example 32 The method of any one of Examples 27 through 31 , the coating layer being formed at temperatures less than about 150°C.
  • Example 33 The method of any one of Examples 3 through 32, the material layer including a multitude of optically scattering or luminescent particles and a coating layer of transparent material that (i) at least partly coats the particles of the multitude, (ii) adheres the particles of the multitude together, and (iii) adheres the multitude to the one or more light-emitting devices.
  • Example 34 The method of Example 33, the particles of the multitude being characterized by a D50 greater than about 0.10 pm and less than about 20 pm, and the coating layer of transparent material having a non-zero thickness less than about 0.3 pm thick.
  • Example 35 The apparatus of any one of Examples 33 or 34, the particles of the multitude including luminescent particles and the material layer forming one or more phosphor wavelength conversion layers of the one or more light-emitting devices.
  • Example 36 The apparatus of any one of Examples 33 through 35, material of the coating layer material having an index of refraction matching or approximately matching an index of refraction of light output surfaces of the one or more light-emitting devices.
  • Example 37 The method of any one of Examples 3 through 36, further comprising adhering to each of the one or more light-emitting devices, using a corresponding portion of the material layer, a corresponding phosphor wavelength conversion layer positioned on and in contact with the corresponding portion of the material layer.
  • Example 38 The method of any one of Examples 1 through 37, the one or more semiconductor light-emitting devices including one or more light-emitting diodes or one or more laser diodes.
  • Example 39 The method of any one of Examples 1 through 38, the one or more semiconductor light-emitting devices comprising an array of semiconductor light-emitting diodes, each light-emitting diode (i) having non-zero transverse dimensions less than about 1 .0 millimeters (non-zero being sufficiently large to act as a light-emitting diode) or (ii) being separated from adjacent light-emitting diodes of the array by non-zero separation less than about 0.10 millimeters (non-zero being sufficiently large to enable independent operation of adjacent light-emitting diodes).
  • Example 40 Example 40.
  • the one or more semiconductor light-emitting devices comprising an array of semiconductor light-emitting diodes, each light-emitting diode (i) having non-zero transverse dimensions less than about 0.10 millimeters or less than about 0.05 millimeters, or (ii) being separated from adjacent light-emitting diodes of the array by non-zero separation less than about 0.05 millimeters, less than about 0.20 millimeters, or less than about 0.10 millimeters.
  • Example 41 The apparatus of any one of Examples 39 or 40, each lightemitting diode having a combined non-zero thickness of n-doped, active, and p-doped layers less than about 5 pm thick (non-zero being sufficiently thick to act as a light-emitting diode).
  • Example 42 The apparatus of any one of Examples 1 through 41 , each light-emitting device including on a light-output surface thereof a protection layer, precursors of the protection layer having reactivity with respect to the light-output surface that is less than reactivity of material layer precursors.
  • Example 43 The method of Example 42, the protection layer including one or more metal or semiconductor oxides.
  • Example 44 The method of Example 43, precursors of the one or more metal or semiconductor oxides of the protection layer including one or more metal or semiconductor halides, amides, alkyl amides, or alkoxides, or organometallic compounds.
  • Example 45 The apparatus of any one or Examples 42 through 44:
  • material of the protection layer including one or more materials selected from a group consisting of HfO2, SiO2, Ga2Oa, GeC , SnO2, CrO2, Nb20s, TiO2, Ta2Os, V2O5, Y2O3, and ZrO2,
  • the material layer including one or more materials selected from a group consisting of AI2O3, HfO2, SiO2, Ga2O3, GeO2, SnO2, CrO2, Nb20s, TiO2, Ta2Os, V2O5, Y2O3, and ZrO2, and
  • each light-emitting device including one or more of GaN, AIN, AIGaN, GaP, AIGaP, or AllnGaP.
  • Example 46 The apparatus of any one of Examples 42 through 45, the protection layer including HfO2 and the material layer including AI2O3.
  • Example 47 The method of Example 46: (i) the protection layer precursors including one or more of tetrakis(dimethylamino)hafnium (Hf(NMe2)4), tetrakis(ethylmethylamino)hafnium (Hf(NMeEt)4), or tetrakis(diethylamino)hafnium (Hf(NEt2)4), and (ii) the material layer precursors including one or more of trimethylaluminum (AI(CH3)3) or dimethylaluminum hydride (HAI(CH3)2).
  • the protection layer precursors including one or more of tetrakis(dimethylamino)hafnium (Hf(NMe2)4), tetrakis(ethylmethylamino)hafnium (Hf(NMeEt)4), or tetrakis(diethylamino)hafnium (Hf(NEt2)4)
  • Example 48 The method of any one of Examples 42 through 47, the protection layer and the coating layer each being formed at temperatures less than about 150°C.
  • Example 49 An apparatus made by the method of any one of Example 1 or Examples 5 through 48, the apparatus comprising: (i) a substrate; (ii) one or more semiconductor light emitting devices mounted on or formed on the substrate; and (iii) a polymer dispersion layer formed on at least portions of the substrate or the one or more light-emitting devices.
  • Example 50 The apparatus of Example 49, the polymer dispersion layer being present on only selected, masked areas of the substrate or the one or more light-emitting devices.
  • Example 51 An apparatus made by the method of any one of Example 2 or Examples 5 through 48, the apparatus comprising: (i) a substrate; (ii) one or more semiconductor light emitting devices mounted on or formed on the substrate; and (iii) a cured polymer layer formed on at least portions of the substrate or the one or more light-emitting devices.
  • Example 52 The apparatus of Example 51 , the cured polymer layer
  • Example 53 The apparatus of Example 52 further comprising a material layer formed on only the exposed areas of the substrate and the one or more lightemitting devices.
  • Example 54 The apparatus of Example 52 further comprising a material layer formed on the masked and exposed areas of the substrate and the one or more light-emitting devices, with the cured polymer layer between the material layer and the masked areas of the substrate or the one or more light emitting devices.
  • each such phrase shall denote the case wherein the quantity in question has been reduced or diminished to such an extent that, for practical purposes in the context of the intended operation or use of the disclosed or claimed apparatus or method, the overall behavior or performance of the apparatus or method does not differ from that which would have occurred had the null quantity in fact been completely removed, exactly equal to zero, or otherwise exactly nulled.
  • any labelling of elements, steps, limitations, or other portions of an embodiment, example, or claim e.g., first, second, third, etc., (a), (b), (c), etc., or (i), (ii), (iii), etc.) is only for purposes of clarity, and shall not be construed as implying any sort of ordering or precedence of the portions so labelled. If any such ordering or precedence is intended, it will be explicitly recited in the embodiment, example, or claim or, in some instances, it will be implicit or inherent based on the specific content of the embodiment, example, or claim.

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  • Led Devices (AREA)

Abstract

Une couche de dispersion de polymère est formée sur un substrat ou sur des dispositifs émetteurs de lumière à semi-conducteur situés sur le substrat. Après la formation de la couche de dispersion de polymère, le séchage et le durcissement de la couche de dispersion de polymère forment une couche de polymère durci. Après le durcissement et le séchage, la couche de polymère durcie n'étant présente que sur des zones masquées sélectionnées du substrat ou des dispositifs émetteurs de lumière, et d'autres zones du substrat ou des dispositifs émetteurs de lumière étant dépourvues de la couche de polymère durcie et restant exposées, une couche de matériau est formée sur au moins les zones exposées du substrat ou des dispositifs émetteurs de lumière. Après la formation de la couche de matériau, la couche de polymère durcie est retirée des zones masquées, laissant la couche de matériau sur les zones exposées.
PCT/US2022/047842 2021-10-29 2022-10-26 Masque de dépôt à motifs formé à l'aide d'un polymère dispersé dans un solvant liquide Ceased WO2023076349A1 (fr)

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CN202280086903.9A CN118476044A (zh) 2021-10-29 2022-10-26 使用分散在液体溶剂中的聚合物形成的图案化沉积掩模
EP22818518.7A EP4423820B1 (fr) 2021-10-29 2022-10-26 Procédé avec masque de dépôt à motifs formé à l'aide d'un polymère dispersé dans un solvant liquide

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US202163273578P 2021-10-29 2021-10-29
US63/273,578 2021-10-29
US17/973,007 2022-10-25
US17/973,007 US12408496B2 (en) 2021-10-29 2022-10-25 Patterned deposition mask formed using polymer dispersed in a liquid solvent

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