[go: up one dir, main page]

WO2023058613A1 - Film formation method, electronic device production method, and film formation device - Google Patents

Film formation method, electronic device production method, and film formation device Download PDF

Info

Publication number
WO2023058613A1
WO2023058613A1 PCT/JP2022/037011 JP2022037011W WO2023058613A1 WO 2023058613 A1 WO2023058613 A1 WO 2023058613A1 JP 2022037011 W JP2022037011 W JP 2022037011W WO 2023058613 A1 WO2023058613 A1 WO 2023058613A1
Authority
WO
WIPO (PCT)
Prior art keywords
ink
wind
substrate
film
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/037011
Other languages
French (fr)
Japanese (ja)
Inventor
貢太郎 前田
充 沢野
勇介 藤井
忠 京相
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of WO2023058613A1 publication Critical patent/WO2023058613A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/26Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/28Processes for applying liquids or other fluent materials performed by transfer from the surfaces of elements carrying the liquid or other fluent material, e.g. brushes, pads, rollers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings

Definitions

  • the present disclosure relates to a film forming method, an electronic device manufacturing method, and a film forming apparatus.
  • Patent Literature 1 discloses the following coating device as a solution coating device capable of preventing unevenness in a thin film formed by a solution coated on a substrate.
  • the coating device disclosed in Patent Document 1 is A solution applicator for applying a solution to the recesses and protrusions of a substrate having an uneven pattern in which recesses and protrusions are regularly formed on the upper surface by inkjet method, a coating head having a plurality of nozzles arranged along a predetermined direction and coating the substrate with the dot-shaped solution from the plurality of nozzles at a constant timing; a driving means for relatively moving the substrate and the coating head; When the substrate and the coating head are moved relative to each other by the driving means, each line of the dot-shaped solution discharged from each of the nozzles and coated on the substrate is arranged adjacent to the upper surface of the substrate.
  • control means for controlling the direction of relative movement to be shifted by a predetermined angle with respect to the extending direction of the uneven pattern so as to straddle two or more of the protrusions extending in the extending direction of the uneven pattern; It is a solution coating device comprising:
  • Patent Document 2 discloses a sealant supply control method capable of continuously applying a predetermined amount of sealant at a predetermined number of times while applying the sealant continuously without a waiting time for permeation of the sealant.
  • the following supply control method is disclosed as a supply control method for the sealant to be provided.
  • the supply control method disclosed in Patent Document 2 is While relatively moving the coating head that discharges the sealant and the circuit board on which the electronic component is mounted, the supply of the sealant that is repeatedly applied multiple times between each electronic component and the circuit board is controlled.
  • the supply amount of the sealant to be applied to each electronic component is divided into the number of times of application corresponding to the viscosity of the sealant and the size of the electronic component, and the divided amount of the sealant is increased as the number of times of application increases.
  • the amount of the sealant is set to alternately increase or decrease according to the above and is allocated for each application, and the amount of the sealant that is allocated for each application is changed from the application head by varying the discharge pressure of the application head. It was set and supplied by the control of This is a method of controlling the supply of a sealant.
  • Patent Document 1 Japanese Patent No. 5244758
  • Patent Document 2 Japanese Patent Application Laid-Open No. 11-47657
  • a film that covers at least the top surface (that is, the upper surface) and side surfaces of a step is formed by an inkjet method on a substrate with a step, which is a substrate having a step in the thickness direction of the substrate.
  • a stepped board is an electronic board including a wiring board and electronic components arranged on the wiring board.
  • the inventors of the present invention have found that, in the formation of the film by the inkjet method, the thickness of the film from the top surface of the step (that is, the top surface) to the side surface of the step may vary greatly. .
  • the thickness variation of the film becomes large, for example: When the thickness of the film on the side surface of the step is too thin compared to the thickness of the film on the top surface of the step; When the thickness of the film on the corner of the joint between the side surface and the top surface of the step is too thin compared to the thickness of the film on the top surface of the step; etc.
  • An object of one aspect of the present disclosure is to form a film that covers at least the top surface of the step and the side surface of the step on a stepped substrate, which is a substrate having a step in the substrate thickness direction, by an inkjet method.
  • a film forming method and a film forming apparatus capable of suppressing variation in film thickness from the top surface of a step to the side surface of a step.
  • An object of another aspect of the present disclosure is to apply ink by an inkjet method to a region including at least the top surface of the electronic component and the side surface of the electronic component on the electronic substrate including the wiring board and the electronic component arranged on the wiring board.
  • Manufacture of an electronic device capable of suppressing variations in the thickness of the insulating layer and/or conductive layer from the top surface of the electronic component to the side surface of the electronic component when the insulating layer and/or conductive layer are formed to form the electronic device. to provide a method.
  • a stepped substrate which is a substrate having a step in the thickness direction of the substrate; Ink is applied to at least the top surface of the steps in the substrate with steps by ejecting ink from an inkjet head, and by blowing air against the ink applied to the top surface of the steps, at least the top surface of the steps. and a film forming step of forming a film covering the side surface of the step; including, Membrane formation method.
  • ⁇ 3> The method of forming a film according to ⁇ 1> or ⁇ 2>, wherein the film forming step includes collecting air.
  • the film forming step further includes subjecting the ink blown by the wind to pinning exposure, The time from the start of wind blowing to the start of pinning exposure is 1 second or less.
  • the film forming step further includes subjecting the ink applied on the top surface of the step to the ink before the wind is blown to a pinning exposure.
  • ⁇ 6> The wind is blown out from the wind blower,
  • the direction of the wind includes a component in the opposite direction to the side where the inkjet head is arranged when viewed from the wind blower,
  • Applying the ink in the film forming step is performed while relatively moving the stepped substrate and the inkjet head, In the ink applied to the stepped substrate, the dot resolution in the direction of relative movement is higher than the dot resolution in the direction perpendicular to the direction of relative movement.
  • the wind is an inert gas stream, the ink is an active energy ray-curable ink containing a polymerizable compound;
  • the stepped substrate includes a base substrate and components arranged on the base substrate, and a gap exists between the base substrate and the components.
  • a partition wall forming step of forming partition walls surrounding the region where the film is formed by ejecting ink from an inkjet head, The method for forming a film according to any one of ⁇ 1> to ⁇ 9>.
  • ⁇ 11> Furthermore, before the film forming step, at least the region where the film is to be formed is subjected to a hydrophilic treatment, The method for forming a film according to any one of ⁇ 1> to ⁇ 10>.
  • ⁇ 12> A step of preparing an electronic substrate including a wiring substrate and electronic components arranged on the wiring substrate; forming at least one of an insulating layer and a conductive layer on an electronic substrate to obtain an electronic device; including At least one of the insulating layer and the conductive layer is formed by the film forming method according to any one of ⁇ 1> to ⁇ 11>, A method of manufacturing an electronic device.
  • An inkjet head that applies ink to at least the top surface of the step in the stepped substrate, which is a substrate having a step in the thickness direction of the substrate;
  • a wind blower for blowing air against the ink applied on the top surface of the step; with The stepped substrate and the inkjet head move relative to each other,
  • a film forming apparatus wherein an inkjet head and an air blower are arranged in a direction of relative movement.
  • a wind collector for collecting wind is provided, The film forming apparatus according to ⁇ 13>.
  • the component contains a component in which the direction of the wind blown from the wind blower is opposite to the side on which the inkjet head is arranged as viewed from the wind blower,
  • ⁇ 16> Equipped with two wind blowers, An inkjet head is arranged between the two air blowers, the relative movement is reciprocating movement,
  • the wind blower has an on/off function for switching between an on state for blowing air and an off state for stopping the blowing of air.
  • the film forming apparatus according to any one of ⁇ 13> to ⁇ 16>.
  • ⁇ 18> further, it comprises a pinning exposure machine that performs pinning exposure on the ink blown by the wind.
  • the film forming apparatus according to any one of ⁇ 13> to ⁇ 17>.
  • a pinning exposure machine is provided for performing pinning exposure on the ink applied on the top surface of the step and before the wind is blown, The film forming apparatus according to any one of ⁇ 13> to ⁇ 18>.
  • the step in forming a film that covers at least the top surface of the step and the side surface of the step on a stepped substrate, which is a substrate having a step in the thickness direction of the substrate, by an inkjet method, the step is Provided are a film forming method and a film forming apparatus capable of suppressing variations in film thickness from the top surface of the step to the side surface of the step.
  • a region including at least the top surface of the electronic component and the side surface of the electronic component on the electronic substrate including the wiring board and the electronic component arranged on the wiring board is coated by an inkjet method.
  • FIG. 1 is a process flow chart conceptually showing a method of forming a film according to an embodiment of the present disclosure
  • FIG. 1 is a process flow chart conceptually showing a method of forming a film according to an embodiment of the present disclosure
  • FIG. 1 is a process flow chart conceptually showing a method of forming a film according to an embodiment of the present disclosure
  • FIG. 1 is a process flow chart conceptually showing a method of forming a film according to an embodiment of the present disclosure
  • FIG. 4 is a schematic side view showing an example of a stepped substrate in which a gap exists between the base substrate and the member; 4 is a schematic plan view conceptually showing an example of a mode in which the dot resolution in the direction of relative movement is higher than the dot resolution in the direction orthogonal to the direction of relative movement in the present disclosure; FIG. FIG. 4 is a schematic side view conceptually showing an example of how ink lands on a corner of a member in the present disclosure.
  • FIG. 4 is a conceptual diagram showing an example of elevation angles in the present disclosure;
  • FIG. 4 is a schematic side view showing an example after the partition forming step and before the film forming step in the case where the film forming method of the present disclosure includes the partition forming step.
  • FIG. 1 is a schematic plan view showing an example of a film forming apparatus of the present disclosure
  • FIG. 7B is a side view of FIG. 7A
  • FIG. 7B is a schematic cross-sectional view showing a modification of the film forming apparatus shown in FIG. 7B
  • FIG. FIG. 4 is a schematic plan view showing another example of the film forming apparatus of the present disclosure
  • 8B is a side view of FIG. 8A
  • FIG. 4 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure
  • Figure 9B is a side view of Figure 9A
  • FIG. 4 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure
  • 10B is a side view of FIG. 10A
  • FIG. 4 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure
  • FIG. 4 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure
  • 1 is a schematic plan view showing an example of a film forming apparatus of the present disclosure in which two air blowers are provided
  • FIG. 13B is a side view of FIG. 13A
  • FIG. 13B is a side view of the case where the conveying direction of the stepped substrate is reversed with respect to FIG. 13B.
  • 1 is a schematic plan view showing an example of a film forming apparatus of the present disclosure in which two air blowers are provided
  • FIG. 14B is a side view of FIG. 14A
  • FIG. 14B is a side view of a case in which the conveying direction of the stepped substrate is reversed with respect to FIG. 14B;
  • FIG. 4 is a schematic plan view of an electronic substrate prepared in a preparation step in the method of manufacturing an electronic device according to the embodiment of the present disclosure;
  • FIG. 15B is a cross-sectional view taken along the line XX of FIG. 15A;
  • 1 is a schematic plan view of an electronic substrate on which an insulating protective layer is formed in a first step in a method of manufacturing an electronic device according to an embodiment of the present disclosure;
  • FIG. FIG. 16B is a cross-sectional view taken along line XX of FIG. 16A;
  • FIG. 4 is a schematic plan view of an electronic substrate (that is, an electronic device according to an embodiment of the present disclosure) on which an electromagnetic wave shield layer is formed in a second step in a method for manufacturing an electronic device according to an embodiment of the present disclosure
  • FIG. 17B is a cross-sectional view taken along the line XX of FIG. 17A;
  • a numerical range indicated using “to” means a range including the numerical values before and after “to” as the minimum and maximum values, respectively.
  • upper or lower limits described in a certain numerical range may be replaced with upper or lower limits of other numerical ranges described step by step.
  • upper or lower limits described in a certain numerical range may be replaced with values shown in Examples.
  • the amount of each component in the composition is the total amount of the multiple substances present in the composition unless otherwise specified. means.
  • a combination of two or more preferred aspects is a more preferred aspect.
  • the term "process" includes not only an independent process, but also if the intended purpose of the process is achieved, even if it cannot be clearly distinguished from other processes. .
  • the method of forming the membrane of the present disclosure comprises: a step of preparing a stepped substrate that is a substrate having a step in the thickness direction of the substrate (hereinafter also referred to as a “stepped substrate preparation step”); Ink is applied to at least the top surface of the stepped substrate by ejecting ink from an inkjet head, and by blowing air against the ink that has landed on the top surface of the stepped surface, at least the top surface of the stepped portion and the top surface of the stepped portion. a film forming step of forming a film covering the side surface of the step; including.
  • the film formation method of the present disclosure may include other steps as necessary.
  • the film forming method of the present disclosure when forming a film covering at least the top surface of the step and the side surface of the step on the stepped substrate by the inkjet method, the top surface of the step and the side surface of the step are formed. It is possible to suppress variations in the thickness of the film over time. The reason why such an effect can be obtained is that the air blowing against the ink that has landed on the top surface of the step can cause a part of the ink on the top surface to flow around the side surface, and as a result, the film on the side surface of the step and/or the thickness of the film on the corner located at the joint between the side surface and the top surface of the step can be suppressed.
  • the film forming method of the present disclosure can be implemented, for example, by a film forming apparatus of the present disclosure, which will be described later.
  • FIG. 1A-1D are process flow diagrams conceptually illustrating a method of forming a film according to an embodiment of the present disclosure.
  • a stepped substrate 10 shown in FIG. 1A is prepared.
  • the stepped substrate 10 includes a flat base substrate 12 and members 18 provided on the base substrate 12 .
  • the end of the member 18 on the base substrate 12 corresponds to the “step” in the present disclosure
  • the side surface 18S of the end of the member 18 corresponds to the side of the step in the present disclosure
  • the The top surface 18U corresponds to the top surface of the step in the present disclosure.
  • the inkjet head 24 is fixed, and ink is ejected from the inkjet head 24 while transporting (that is, moving) the stepped substrate 10 in the transport direction M1. 26 is discharged. As a result, the ink 26 is applied to the area including the top surface of the member 18 .
  • the inkjet head is fixed and the stepped substrate is moved, but the stepped substrate may be fixed and the inkjet head may be moved, or both the inkjet head and the stepped substrate may be moved.
  • the ink is applied to the area extending over the top surface of the member 18 and the area outside the top surface (on the side surface of the member 18 and on the base substrate 12).
  • the ink may be applied at least on the top surface of the member 18 and may be applied only on the top surface of the member 18 .
  • the thickness of the ink 26 on the side surface 18S of the member 18 and the thickness of the ink 26 on the corner 18C located at the joint between the side surface 18S and the top surface 18U The thickness of the ink 26 on the top surface 18U is thinner than the thickness of the film on the top surface 18U. As a result, variations in the thickness of the film from the side surface 18S to the top surface 18U of the member 18 are increased.
  • the problem of the film forming method of the present disclosure is to suppress this thickness variation.
  • a wind W1 is blown to the ink 26 on the top surface 18U.
  • a portion of the ink 26 on the central portion of the top surface 18U moves onto the peripheral edge portion of the top surface 18U and further moves onto the corner portions 18C and the side surfaces 18S due to the force of the wind W1.
  • FIG. 1D the phenomenon that the thickness of the ink on the corner 18C and the side surface 18S becomes thin is suppressed, and the variation in the thickness of the film from the side surface 18S to the top surface 18U is suppressed. be.
  • the film formation method of the present disclosure includes a stepped substrate preparation step.
  • a stepped substrate is a substrate having a step in the thickness direction of the substrate.
  • the stepped substrate preparation step may be a step of simply preparing a previously manufactured stepped substrate, or may be a step of manufacturing a stepped substrate.
  • the stepped substrate is the stepped substrate 10 including the base substrate 12 and the member 18 arranged on the base substrate 12 described above.
  • the member 18 may be a component (e.g., electronic component) attached to the base substrate 12 (e.g., wiring board), or a pattern film (e.g., metal pattern film, insulating film, resist pattern film, etc.).
  • the stepped substrate 10 may be an electronic substrate including a wiring substrate and electronic components arranged on the wiring substrate.
  • the wiring board a board on which wiring is formed, for example, a printed wiring board can be used.
  • electronic components include semiconductor chips such as integrated circuits (ICs), capacitors, and transistors.
  • the wiring board may include a ground electrode, ground wiring, a solder resist layer, and the like.
  • the substrate with a step is not limited to a substrate with a step formed by attaching a member to the base substrate. including), through holes, etc.) may be formed.
  • the material of the base substrate in the stepped substrate is not particularly limited, but examples include glass, ceramics, metal, resin, and the like.
  • the stepped substrate includes a base substrate and a member arranged on the base substrate, and a gap may exist between the base substrate and the member.
  • a gap between the base substrate and the member, when the ink is applied to the region including the member, the gap between the base substrate and the member The thickness of the ink on the side surface of the member tends to be thinner because the ink enters the gap between the members.
  • the method of forming a film according to the present disclosure by blowing air against the ink on the top surface of the member, the ink on the top surface can be made to flow onto the side surface.
  • the effect of the present disclosure is more likely to be exhibited by blowing air against the ink on the top surface of the step.
  • FIG. 2 is a schematic side view showing an example of a stepped substrate in which a gap exists between the base substrate and the member.
  • the structure of the stepped substrate 13 according to the example shown in FIG. It is a structure in which a gap 17 is provided between it and the member 18 .
  • the connection member 16 includes a connection material (for example, a solder ball, an adhesive, etc.) for connecting the base substrate 12 and the member 18, and the like.
  • a method of forming a film of the present disclosure includes a film forming step.
  • ink is applied to at least the top surface of the stepped substrate by ejecting ink from an inkjet head, and by blowing air against the ink that has landed on the top surface of the stepped surface, at least This is a step of forming a film covering the top surface of the step and the side surface of the step.
  • the ink is not particularly limited, but examples thereof include conductive inks and insulating inks described later in the section of the electronic device manufacturing method.
  • a known method in inkjet recording can be appropriately applied.
  • a charge control method that ejects ink using electrostatic attraction, and a vibration pressure of a piezoelectric element can be used.
  • the drop-on-demand method (pressure pulse method) used, the acoustic inkjet method that converts an electrical signal into an acoustic beam and irradiates it on the ink and uses radiation pressure to eject the ink, and the ink that is heated to form bubbles and generate Any thermal ink jet (bubble jet (registered trademark)) system that utilizes pressure may be used.
  • the inkjet head may be fixed and the stepped substrate may be moved, the stepped substrate may be fixed and the inkjet head may be moved, or both the inkjet head and the stepped substrate may be moved.
  • the dot resolution in the direction of the relative movement in the ink applied to the stepped substrate is different from the direction of the relative movement. It is preferably higher than the dot resolution in the orthogonal direction. This makes it easier for the ink to land on the corners of the steps in the direction that intersects (for example, perpendicularly) the direction of relative movement, and as a result, secures the amount of ink adhering to the side surfaces of the steps in the intersecting direction. easier to do. As a result, since the thickness of the ink on the side surface of the step is ensured, variations in the thickness of the film from the side surface to the top surface of the step are further suppressed.
  • FIG. 3 is a schematic plan view conceptually showing an example of a mode in which the dot resolution in the direction of relative movement is higher than the dot resolution in the direction orthogonal to the direction of relative movement.
  • FIG. 4 is a schematic side view conceptually showing an example of how ink lands on a corner of a member.
  • the stepped substrate 10 is moved in the transport direction M1, and a large number of ink dots D1 are formed over the member 18 and its surroundings on the stepped substrate 10 .
  • the density (ie, dot resolution) of the ink dots D1 in the direction parallel to the transport direction M1 is the same as the density of the ink dots D1 in the direction perpendicular to the direction of relative movement. higher than the density (ie dot resolution). More specifically, FIG. 3 illustrates a state in which the dot resolution in the direction of relative movement is about twice the dot resolution in the direction orthogonal to the direction of relative movement.
  • blowing wind In the film forming process, by blowing air against the ink that has landed on the top surface of the step, A film covering at least the top surface of the step and the side surface of the step is formed. Specifically, as described above, due to the force of this wind, part of the ink that has landed on the top surface moves onto the corners and sides, and as a result, the thickness of the ink on the corners and sides becomes thin. phenomenon is suppressed.
  • the speed of the wind is not particularly limited.
  • the wind speed of the wind is preferably 1 m / s to 30 m / s, more preferably 1 m / s or more and less than 30 m / s, and 1 m / s to 25 m / s. /s, more preferably 2 m/s to 20 m/s, even more preferably 5 m/s to 15 m/s.
  • the direction in which the air blows against the ink that has landed on the top surface of the steps is particularly limited. no.
  • the direction in which the wind blows against the ink that has landed on the top surface of the step is preferably a direction in which the elevation angle is 10° to 90°, and the elevation angle is 20° to 90°. is more preferable, and a direction in which the elevation angle is 30° to 90° is even more preferable.
  • FIG. 5 is a conceptual diagram showing an example of elevation angles.
  • the elevation angle in this example is the angle X° from the horizontal plane when looking up at the position P1 where the wind blows represented by symbol W1 and the direction from which the wind comes.
  • the wind is the wind blown from the wind blower.
  • the air blower for example, a dryer, hot air generator, compressed air generator, fan, blower, etc. can be used. Further, as the air blower, a pipe for circulating compressed air in the factory may be drawn into the film forming apparatus and used.
  • the direction of the air blown from the air blower preferably includes a component in the direction opposite to the side on which the inkjet head is arranged as viewed from the air blower (for example, see FIG. 7B described later).
  • the wind is not particularly limited, and any gas stream can be used.
  • the wind is preferably an inert gas stream.
  • inert gas include nitrogen gas, argon gas, helium gas, and the like.
  • the film forming step includes recovering the air blown against the ink.
  • the device for example, the inkjet recording device
  • satellite droplets and/or mist droplets ejected from the inkjet head and not adhered to the substrate can be recovered.
  • the wind can be collected, for example, by using a wind collector, an exhaust device, or the like, which is a combination of a fan and a pipe connected to the outside of the film forming apparatus.
  • a replaceable filter is placed in front of the fan and replaced periodically to prevent satellite droplets and/or mist droplets from diffusing into the factory.
  • the film forming step may further include subjecting the ink blown by the wind to pinning exposure (hereinafter also referred to as “pinning exposure A”).
  • pinning exposure A the integrated exposure amount of the pinning exposure A is not particularly limited, it is, for example, 0.1 J/cm 2 to 1000 J/cm 2 . Since the fluidity of the ink can be suppressed by this pinning exposure A, it is possible to suppress the ink adhering to the side surface of the step from flowing down due to gravity. Therefore, variations in the thickness of the film from the side surface to the top surface of the step can be further suppressed.
  • the integrated exposure amount of the pinning exposure A is not particularly limited, it is, for example, 0.1 J/cm 2 to 1000 J/cm 2 .
  • the integrated exposure amount of the pinning exposure A for the conductive layer forming ink is preferably 0.1 J/cm 2 to 1000 J/cm 2 , It is more preferably 1 J/cm 2 to 100 J/cm 2 .
  • the integrated exposure amount of the pinning exposure A for this insulating layer forming ink is preferably 0.1 J/cm 2 to 100 J/cm 2 , It is more preferably 0.1 J/cm 2 to 10 J/cm 2 .
  • the time from the start of blowing air to the start of pinning exposure A is preferably 1 second or less. As a result, variations in the thickness of the film from the side surface to the top surface of the step can be further suppressed.
  • the film forming step may further include applying pinning exposure (hereinafter also referred to as “pinning exposure B”) to the ink that has been applied to the top surface of the step and has not yet been blown with air. .
  • pinning exposure B pinning exposure
  • the viscosity of the ink on the top surface can be increased appropriately, so that the ink on the top surface can be suppressed from excessively flowing down due to the blowing of the wind, and the ink on the top surface after the blowing of the wind can be prevented. It becomes easy to make it remain moderately on the top surface.
  • the preferred range of the integrated exposure amount of the pinning exposure B is the same as the preferred range of the integrated exposure amount of the pinning exposure A.
  • both the pinning exposure A that is, the pinning exposure before wind is blown against the ink
  • the above pinning exposure B that is, the pinning exposure after the wind is blown against the ink
  • the film forming step may include heating the stepped substrate to which the ink is applied to a temperature of 100° C. or higher.
  • the fluidity of the ink can be suppressed by heating and drying the ink, so that the ink adhering to the side surface of the step can be suppressed from flowing down due to gravity. Therefore, variations in the thickness of the film from the side surface to the top surface of the step can be further suppressed.
  • the heating temperature of the stepped substrate to which the ink is applied is preferably 250°C or less, more preferably 50°C to 200°C, and even more preferably 60°C to 180°C.
  • the method of forming a film of the present disclosure includes, before the film forming step, a partition forming step of forming partitions surrounding a region where the film is formed by ejecting ink from an inkjet head.
  • a partition forming step of forming partitions surrounding a region where the film is formed by ejecting ink from an inkjet head.
  • the ink in the film forming step flows out of the originally intended region, and/or the ink in the film forming step does not form the film on the stepped substrate. A phenomenon that wraps around the surface is suppressed.
  • FIG. 6 is a schematic side view showing an example after the partition forming step and before the film forming step in the case where the film forming method of the present disclosure includes the partition forming step.
  • the example shown in FIG. 6 is the same as the example shown in FIG. 2 except that partition walls 19 are formed.
  • the method of forming the partition is not particularly limited, but from the viewpoint of productivity, it is preferable to form the partition by an inkjet method, as in the film forming process.
  • the film forming method of the present disclosure may include a step of subjecting at least the region where the film is to be formed to a hydrophilic treatment prior to the film forming step.
  • hydrophilic treatment examples include corona discharge treatment, ozone treatment, argon plasma treatment, oxygen plasma treatment, and the like.
  • the film forming method of the present disclosure preferably includes a step of heating the stepped substrate (also referred to as a “preheating step” in the present disclosure) prior to the film forming step.
  • the film forming step applies ink to the stepped substrate heated to the above temperature.
  • the fluidity of the ink can be suppressed by heating and drying the ink according to the aspect including the preheating step, it is possible to suppress the ink adhering to the side surface of the step from flowing down due to gravity. Therefore, variations in film thickness from the top surface to the side surface of the step can be further suppressed.
  • the heating temperature in the preheating step is more preferably 20°C to 120°C, still more preferably 28°C to 80°C.
  • ink is applied to at least the top surface of the step of the stepped substrate, and air is blown onto the applied ink, thereby covering the top surface from the side surface of the step.
  • the ink is also applied to the vicinity of the edge of the substrate with the step, and the ink in the vicinity of the edge is blown with air to flow the ink around the edge of the substrate with the step, thereby forming a film on the edge of the substrate with the step. may be formed.
  • the film forming apparatus of the present disclosure is an inkjet head that applies ink to at least the top surface of the stepped substrate, which is a substrate having a stepped portion in the thickness direction of the substrate; A wind blower for blowing air against the ink applied on the top surface of the step; with The stepped substrate and the inkjet head move relative to each other, The inkjet head and the air blower are arranged in the direction of relative movement, It is a film forming apparatus.
  • the film forming apparatus of the present disclosure similarly to the film forming method of the present disclosure, for a stepped substrate that is a substrate having a step in the substrate thickness direction, the thickness from the top surface to the side surface of the step is A film with suppressed variation can be formed. The reason why such an effect is obtained is as explained in the section of the film forming method of the present disclosure.
  • the film forming apparatus of the present disclosure further includes a wind collector that collects the wind.
  • the effect of recovering wind and an example of the wind collector are as described in the section of the membrane formation method of the present disclosure.
  • the direction of the air blown from the air blower preferably includes a component in the direction opposite to the side on which the inkjet head is arranged as viewed from the air blower (for example, see FIG. 7B described later).
  • the film forming apparatus 300 includes a substrate transport stage 212 for transporting the stepped substrate 10, transport rails 210 on which the substrate transport stage 212 moves, and an inkjet head 24. , an air blower 28 , an air collector 30 , and a pinning exposure machine 32 .
  • the inkjet head 24, the wind blower 28, the wind recovery device 30, and the pinning exposure device 32 are arranged in this order from the upstream side in the transport direction M1 (that is, the movement direction of the substrate transport stage 212).
  • ink is applied from the inkjet head 24 and air is applied from the air blower 28 to the area including the top surface of the stepped substrate 10 transported in the transporting direction M1.
  • Wind blowing and pinning exposure by the pinning exposure device 32 are performed in this order. At this time, the wind is collected by the wind collector 30 as appropriate.
  • the pinning exposure by the pinning exposure unit 32 further suppresses variations in the thickness of the film, as described above.
  • the recovery of the wind by the wind recovery device 30 makes it possible to further suppress the pressure rise in the apparatus and to recover ink satellite droplets and/or mist droplets.
  • the direction W1 of the wind blown from the wind blower 28 includes a component W1X in the direction opposite to the side where the inkjet head 24 is arranged when viewed from the wind blower 28. .
  • the wind is not directed toward the inkjet head 24, it is possible to further suppress the deterioration of the ink ejection accuracy due to the influence of the wind.
  • the reflection angle (hereinafter also simply referred to as “reflection angle”) with respect to the top surface of the step in the direction in which the wind is collected by the wind collector 30 is blown out from the wind blower 28.
  • the angle of incidence of the direction W1 of the wind with respect to the top surface of the step (hereinafter also simply referred to as “incident angle”) is adjusted to be substantially equal.
  • the angle of incidence of the direction W1 of the wind blown from the wind blower 28 with respect to the top surface of the step corresponds to the elevation angle described above (see FIG. 5, for example).
  • the preferred range of the incident angle is the same as the preferred range of the elevation angle described above.
  • FIG. 7C is a schematic cross-sectional view showing a modification (film forming apparatus 300X) of the film forming apparatus 300 shown in FIG. 7B.
  • the wind blower 28X that is, the flow path
  • the wind first travels downward in the direction of gravity, then bends halfway and is blown out from the wind blower 28X.
  • the angle of incidence of the direction W1 of the wind blown out from the wind blower 28X is approximately the same as the angle of incidence of the direction W1 of the wind blown out from the wind blower 28 (FIG. 7B).
  • the wind is collected by the wind collector 30X in the film forming device 300X.
  • the reflection angle of the wind (FIG. 7C) at this time is approximately the same as the reflection angle of the wind (FIG. 7B) when the wind is collected by the wind collector 30 .
  • the wind collected by the wind collector 30X bends in its traveling direction inside the wind collector 30X (that is, the flow path), and then travels upward in the direction of gravity.
  • the configuration of the film forming apparatus 300X shown in FIG. 7C is the same as that of the film forming apparatus 300 shown in FIG. 7B except for the points described above.
  • the film forming apparatus 300X shown in FIG. 7C also has the same effect as the film forming apparatus 300 shown in FIG. 7B.
  • the air blower 28 and the air blower 28X preferably have an on/off function for switching between an on state for blowing air and an off state for stopping the blowing of air. Thereby, it is possible to selectively blow the air onto the ink on the area including the top surface of the step.
  • the on/off function can be realized, for example, by providing a shutter at the air outlet of the air blower.
  • the film forming apparatus of the present disclosure is not limited to the example shown in FIGS. 7A-7C.
  • the direction W1 of the wind blown from the wind blower 28 and the wind recovery device 30 recover the wind.
  • the orientation is not limited to the above example.
  • the direction W1 of the wind blown from the wind blower 28 may be downward in the direction of gravity, and the direction in which the wind is recovered by the wind collector 30 may be upward in the direction of gravity.
  • the arrangement of the wind blower and the wind recovery device may be exchanged.
  • the wind collecting device and the pinning exposure device may be omitted.
  • FIG. 8A is a schematic plan view showing another example (film forming apparatus 300A) of the film forming apparatus of the present disclosure
  • FIG. 8B is a side view of FIG. 8A
  • a film forming apparatus 300A shown in FIGS. 8A and 8B is different from the film forming apparatus 300 shown in FIGS. This is an example in which the direction of collecting wind is changed upward in the direction of gravity by means of 30 .
  • the film forming apparatus 300A shown in FIGS. 8A and 8B similarly to the film forming apparatus 300 shown in FIGS. They are arranged in this order from the upstream side in the transport direction M1 (that is, the movement direction of the substrate transport stage 212).
  • FIG. 9A is a schematic plan view showing still another example (film forming apparatus 300B) of the film forming apparatus of the present disclosure
  • FIG. 9B is a side view of FIG. 9A
  • a film forming apparatus 300B shown in FIGS. 9A and 9B is an example in which the positions of the wind blowing device 28 and the wind collecting device 30 are exchanged with respect to the film forming device 300A shown in FIGS. 8A and 8B. That is, in this modification, the inkjet head 24, the wind recovery device 30, the wind blower 28, and the pinning exposure device 32 are arranged in this order from the upstream side in the transport direction M1 (that is, the movement direction of the substrate transport stage 212). ing.
  • the wind recovery device 30 not only recovers the wind from the wind blowing device 28, but also collects minute particles that do not reach the stepped substrate 10 and are carried together with the stepped substrate 10. Ink droplets (ink mist) can also be recovered. 8A and 8B, the air blower 28 can form a film in which the thickness variation from the side surface to the top surface of the step is suppressed. Further, since minute ink droplets can be collected by the wind collector 30, it is possible to suppress the diffusion of the minute ink droplets due to the wind from the wind blower 28. FIG.
  • FIG. 10A is a schematic plan view showing still another example (film forming apparatus 300C) of the film forming apparatus of the present disclosure
  • FIG. 10B is a side view of FIG. 10A
  • a film forming apparatus 300C shown in FIGS. 10A and 10B is an example in which a pinning exposure device 34 is added between the inkjet head 24 and the wind blower 28 to the film forming apparatus 300A shown in FIGS. 8A and 8B.
  • the inkjet head 24, the pinning exposure device 34, the air blowing device 28, the air recovery device 30, and the pinning exposure device 32 are arranged from the upstream side in the transport direction M1 (that is, the movement direction of the substrate transport stage 212). arranged in this order.
  • the pinning exposure can be performed by the pinning exposure device 34 on the ink applied on the top surface and before the wind blows.
  • the viscosity of the ink on the top surface can be increased appropriately, so that the ink on the top surface can be suppressed from excessively flowing down due to the blowing of the wind, and the ink on the top surface after the blowing of the wind can be prevented. It becomes easy to make it remain moderately on the top surface.
  • the effect of suppressing variations in the thickness of the film from the side surface to the top surface of the step is exhibited more effectively.
  • the pinning exposure for the ink applied on the top surface and before the air is blown can be performed by using the film forming apparatus 300C, or by reciprocating the stepped substrate.
  • a film forming apparatus 300A shown in FIG. 8B can also be used.
  • the pinning exposure is performed for the ink before the wind is blown, and the ink after the wind is blown. It is also possible to omit the pinning exposure.
  • the wind recovery can be implemented even if the wind recovery machine is omitted.
  • FIG. 11 is a schematic plan view showing another example of the film forming apparatus of the present disclosure.
  • a film forming apparatus 301 shown in FIG. 11 is based on the film forming apparatus 300, omits the wind collector 30, and has a through hole 214 in the substrate transfer stage 213 instead.
  • the through hole 214 in this example is provided outside the area of the substrate transfer stage 213 that contacts the stepped substrate 10 .
  • air can be recovered by exhausting the space in which the stepped substrate 10 is arranged through the through holes 214.
  • FIG. 12 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure.
  • a film forming apparatus 302 shown in FIG. 12 is based on the film forming apparatus 300, omits the wind collector 30, and instead has a through hole 216 provided in the substrate transfer stage 215, and a stepped substrate 10A having a through hole.
  • This device uses a stepped substrate in which holes 11 are formed.
  • the through-hole 216 in this example is a through-hole extending from the outside of the area in contact with the substrate 10 with a step to the inside of the area in contact with the substrate 10 with a step in the substrate transfer stage 215 .
  • This through-hole 216 has a function of collecting wind and a function of causing the substrate 10 with a step to be attracted to the substrate transfer stage 215 .
  • air can be recovered by exhausting the space in which the stepped substrate 10A is arranged through the through holes 11 of the stepped substrate 10A itself and the through holes 216 of the substrate transfer stage 215.
  • the film forming apparatus of the present disclosure includes two of the air blowers, An inkjet head is arranged between the two air blowers, It is preferable that the relative movement between the stepped substrate and the inkjet head is reciprocating movement. According to this aspect, the application of ink and the blowing of air can be performed in both the forward movement and the backward movement, so the productivity of film formation is excellent.
  • FIG. 13A is a schematic plan view showing an example of a film forming apparatus of the present disclosure in which two air blowers are provided
  • FIG. 13B is a side view of FIG. 13A
  • FIG. FIG. 10 is a side view of the stepped substrate when the conveying direction is reversed;
  • the film forming apparatus 400 includes, with respect to the film forming apparatus 300, an air blower 28B, an air collector 30B, and a pinning exposure machine 32B are added in this order.
  • the substrate transfer stage 212 in the film forming apparatus 400 is movable in both the transfer direction M11 (outward path) and the transfer direction M11B (return path) (that is, reciprocating movement is possible).
  • the substrate transport stage 212 in the film forming apparatus 400 applies ink from the inkjet head 24 to the area including the top surface of the stepped substrate 10 transported in the transport direction M11B (return path), and blows air.
  • the blowing of air from the machine 28B and the pinning exposure by the pinning exposure machine 32B are performed in this order.
  • the wind is collected by the wind collector 30B as appropriate.
  • none of the wind blower 28, the wind recovery device 30, and the pinning exposure device 32 are operated and turned off.
  • FIGS. 13A to 13C Another example different from the example shown in FIGS. 13A to 13C is an example in which at least one of the positions of the wind blower 28 and the wind collector 30 and the positions of the wind blower 28B and the wind collector 30B are exchanged.
  • . 14A is a schematic plan view showing another example of the film forming apparatus of the present disclosure in which two air blowers are provided
  • FIG. 14B is a side view of FIG. 14A
  • the wind collector 30 not only collects the wind from the wind blower 28, but also makes it reach the stepped substrate 10. It is also possible to collect minute ink droplets (ink mist) carried together with the stepped substrate 10 without removing. 13A to 13C, the air blower 28 can be used to form a film in which the thickness variation from the side surface to the top surface of the step is suppressed. . Further, since minute ink droplets can be collected by the wind collector 30, it is possible to suppress the diffusion of the minute ink droplets due to the wind from the wind blower 28. FIG.
  • the wind recovery device 30B in the conveying direction M11B (return trip), not only recovers the wind from the wind blower 28B, but also makes it reach the stepped substrate 10. It is also possible to collect minute ink droplets (ink mist) carried together with the stepped substrate 10 without removing. 11A to 11C, the air blower 28B can form a film in which the thickness variation from the side surface to the top surface of the step is suppressed. Further, since minute ink droplets can be collected by the wind collector 30B, it is possible to suppress the diffusion of minute ink droplets due to the wind from the wind blower 28B.
  • the film forming method and the film forming apparatus of the present disclosure described above can be applied to all uses as a method and apparatus for forming a film on a stepped substrate by an inkjet method.
  • the film forming method of the present disclosure and the film forming apparatus of the present disclosure are applicable, for example, to the method of manufacturing an electronic device of the present disclosure, which will be described later.
  • the manufacturing method of the electronic device of the present disclosure includes: preparing an electronic substrate comprising a wiring substrate and electronic components arranged on the wiring substrate; forming at least one of an insulating layer and a conductive layer on an electronic substrate to obtain an electronic device; including At least one of the insulating layer and the conductive layer is formed by the film forming method of the present disclosure described above; A method for manufacturing an electronic device.
  • the method of manufacturing an electronic device of the present disclosure may include other steps as necessary.
  • the electronic device manufacturing method of the present disclosure includes the film forming method of the present disclosure described above, according to the electronic device manufacturing method of the present disclosure, effects similar to those of the film forming method of the present disclosure described above are obtained. is played. At least one of the insulating layer and the conductive layer in the electronic device manufacturing method of the present disclosure may be formed by the film forming apparatus of the present disclosure described above.
  • the electronic substrate (that is, the electronic substrate including the wiring substrate and the electronic components arranged on the wiring substrate) is the above-described "step difference" in the film forming method of the present disclosure. It corresponds to the board with In the method for manufacturing an electronic device of the present disclosure, the end of the electronic component on the wiring board, the side surface of the end of the electronic component, and the top surface of the electronic component are each ""Step","Side of Step", and "Top of Step".
  • the method for manufacturing an electronic device according to this example includes: A wiring board having a mounting surface, a plurality of electronic components mounted on the mounting surface of the wiring board, and a ground electrode arranged to surround at least one electronic component among the plurality of electronic components in plan view.
  • an electronic board preparation step of preparing an electronic board comprising a first step of forming an insulating protective layer covering at least one electronic component in a ground area surrounded by a ground electrode; a second step of forming, as a solidified ink for forming an electromagnetic wave shield layer, an electromagnetic wave shield layer that straddles the insulating protective layer and the ground electrode, covers the insulating protective layer, and is electrically connected to the ground electrode; , including At least one of the insulating protective layer and the electromagnetic wave shielding layer is formed by the film forming method of the present disclosure described above.
  • the insulating protective layer is an example of an insulating layer
  • the electromagnetic wave shielding layer is an example of a conductive layer.
  • FIG. 15A is a schematic plan view of an electronic substrate prepared in the electronic substrate preparation step, and FIG. 15B is a cross-sectional view taken along line XX of FIG. 15A.
  • 16A is a schematic plan view of an electronic substrate on which an insulating protective layer, which is an example of an insulating layer, is formed
  • FIG. 16B is a cross-sectional view taken along line XX of FIG. 16A.
  • FIG. 17A is a schematic plan view of an electronic substrate (that is, the electronic device of the present embodiment) on which an electromagnetic wave shield layer, which is an example of a conductive layer, is formed
  • FIG. 17B is a cross-sectional view taken along line XX of FIG. 17A. be.
  • a wiring board 112 having a mounting surface, a plurality of electronic components 118 mounted on the mounting surface of the wiring board 112, and and a ground electrode 116 arranged to surround a plurality of electronic components 118.
  • An electronic substrate 110 is prepared. Although illustration is omitted, each of the plurality of electronic components 118 is mounted on the mounting surface of the wiring board 112 via solder balls. A minute gap exists between the wiring board 112 and each of the plurality of electronic components 118 (see FIG. 2 described above).
  • the electronic substrate preparation step may be a step of simply preparing the electronic substrate 110 manufactured in advance, or may be a step of manufacturing the electronic substrate 110 .
  • a method for manufacturing the electronic board 110 for example, a known method for manufacturing an electronic board in which electronic components are mounted on a printed wiring board can be appropriately referred to.
  • the wiring board 112 a board on which wiring is formed, for example, a printed wiring board can be used.
  • the wiring board 112 may include electrodes other than the ground electrode 116, a solder resist layer, and the like.
  • the ground electrode 116 is an electrode to which a ground (GND) potential is applied.
  • the ground electrode 116 is arranged to surround a plurality of electronic components (electronic components 118).
  • a plurality of electronic components are mounted within the ground area 114A surrounded by the ground electrode 116.
  • the ground electrode 116 in this example is formed as a discontinuous pattern (more specifically, a segmented line pattern), but the ground electrode in the present disclosure is not limited to this example. .
  • the ground electrode in the present disclosure may be formed as a continuous pattern (ie, an unbroken line pattern).
  • the ground electrode 116 in this example is formed as an annular pattern that completely circles around the plurality of electronic components (electronic components 118).
  • the ground electrode 116 in the present disclosure is not limited to this annular pattern, and may be, for example, a pattern in which at least a portion of the annular pattern is missing.
  • the ground electrode 116 preferably surrounds the region where the plurality of electronic components are arranged by more than half the circumference. It is more preferable to enclose more than the perimeter.
  • the ground electrode 116 in this example is formed such that a portion of the ground electrode 116 in the thickness direction is embedded in the wiring substrate 112, but the ground electrode in the present disclosure is , but not limited to this example.
  • the ground electrode in the present disclosure may be formed so as to be completely embedded in the thickness direction of the ground electrode.
  • the ground electrode in the present disclosure may be formed on the surface of the wiring board 112 instead of being embedded in the wiring board 112 .
  • the ground electrode in the present disclosure may be formed as a pattern penetrating the wiring board 112 .
  • the plurality of electronic components 118 mounted in the ground area 114A may be electronic components of the same design or electronic components of different designs. Also, the number of electronic components mounted in the ground area is not limited to a plurality, and may be only one. Examples of the electronic component 118 include a semiconductor chip such as an integrated circuit (IC), a capacitor, a transistor, and the like.
  • IC integrated circuit
  • the height of the electronic component (eg, electronic component 118) in the present disclosure is preferably 100 ⁇ m or more, more preferably 200 ⁇ m or more, and even more preferably 300 ⁇ m or more.
  • the height of the electronic component is preferably 2000 ⁇ m or less, more preferably 1000 ⁇ m or less.
  • the height of the ground electrode (eg, ground electrode 116) in the present disclosure is preferably ⁇ 10 ⁇ m or more, more preferably 0 ⁇ m or more, and even more preferably 5 ⁇ m or more.
  • the height of the ground electrode is preferably 100 ⁇ m or less, more preferably 50 ⁇ m or less, and even more preferably 30 ⁇ m or less.
  • an insulating protective layer 122 is formed to cover the plurality of electronic components 118 mounted within the ground area 114A.
  • the insulating protective layer 122 is formed within the ground area 114 ⁇ /b>A in a region extending over the plurality of electronic components 118 and around the plurality of electronic components 118 .
  • the function of the insulating protective layer is, for example, the function of protecting electronic components and the function of suppressing short circuits between electronic components and other conductive members (for example, electromagnetic shielding layers).
  • the insulating protective layer 122 can be formed using, for example, an insulating layer forming ink.
  • the insulating layer forming ink is, for example, an active energy ray-curable ink.
  • the film manufacturing method of the present disclosure described above can be applied to the formation of the insulating protective layer 122 . Thereby, it is possible to form the insulating protective layer 122 in which the thickness variation from the side surface to the top surface of the electronic component 118 is suppressed.
  • an electromagnetic wave shielding layer forming ink is used as the conductive layer forming ink, and the ink extends over the insulating protective layer 122 and at least a portion of the ground electrode 116.
  • An electromagnetic wave shielding layer 130 (that is, a conductive layer), which is a solidified ink for forming an electromagnetic wave shielding layer and which covers the insulating protective layer 122 and is electrically connected to the ground electrode 116, is formed.
  • the electromagnetic wave shield layer 130 is formed by applying an electromagnetic wave shield layer forming ink to the ground area 114A and solidifying the ink. A preferred range of the ink for forming the electromagnetic shield layer and the method for forming the electromagnetic shield layer will be described later.
  • the electromagnetic wave shield layer is a layer for reducing the influence of electromagnetic waves on electronic components by shielding the electromagnetic waves irradiated to the electronic components.
  • the performance of such an electromagnetic wave shielding layer is also referred to as "electromagnetic wave shielding property" in the present disclosure.
  • the electromagnetic wave shielding property of the electromagnetic wave shield layer is exhibited by placing the electromagnetic wave shield layer on the electronic component via an insulating protective layer. Further, the electromagnetic shielding property of the electromagnetic shielding layer is exhibited by applying a ground (GND) potential to the electromagnetic shielding layer. For this reason, the electromagnetic wave shield layer has conductivity as a premise of the electromagnetic wave shield layer.
  • GND ground
  • the film manufacturing method of the present disclosure described above can also be applied to the formation of the electromagnetic wave shield layer 130 .
  • the electromagnetic wave shield layer 130 can be formed with the insulating protective layer 122 interposed therebetween, in which variations in thickness from the side surface to the top surface of the electronic component 118 are suppressed.
  • ink for forming a conductive layer e.g. ink for forming an electromagnetic wave shield layer
  • method for forming an electromagnetic wave shield layer ink for forming an insulating layer
  • method for forming an insulating protective layer e.g. ink for forming an insulating protective layer
  • conductive layer-forming inks for example, electromagnetic wave shielding layer-forming inks
  • examples of conductive layer-forming inks include inks containing metal particles (hereinafter also referred to as “metal particle ink”) and inks containing metal complexes (hereinafter also referred to as “metal complex ink”).
  • metal particle ink inks containing metal particles
  • metal complex ink metal complexes
  • an ink containing a metal salt hereinafter also referred to as “metal salt ink”
  • metal salt ink metal salt ink
  • Metal particle ink is, for example, an ink composition in which metal particles are dispersed in a dispersion medium.
  • the metal that constitutes the metal particles include particles of base metals and noble metals.
  • Base metals include, for example, nickel, titanium, cobalt, copper, chromium, manganese, iron, zirconium, tin, tungsten, molybdenum, and vanadium.
  • Noble metals include, for example, gold, silver, platinum, palladium, iridium, osmium, ruthenium, rhodium, rhenium, and alloys containing these metals.
  • the metal constituting the metal particles preferably contains at least one selected from the group consisting of silver, gold, platinum, nickel, palladium and copper, and more preferably contains silver. preferable.
  • the average particle size of the metal particles is not particularly limited, it is preferably 10 nm to 500 nm, more preferably 10 nm to 200 nm.
  • the firing temperature of the metal particles is lowered, and the process suitability for forming the electromagnetic wave shielding layer is enhanced.
  • the metal particle ink is applied using a spray method or an inkjet recording method, there is a tendency that the ejection property is improved, and the pattern formability and the uniformity of the film thickness of the electromagnetic wave shield layer are improved.
  • the average particle diameter here means the average value of the primary particle diameters of the metal particles (average primary particle diameter).
  • the average particle size of metal particles is measured by a laser diffraction/scattering method.
  • the average particle size of the metal particles is, for example, a value calculated as the average value of the values obtained by measuring the 50% volume cumulative diameter (D50) three times and using a laser diffraction/scattering particle size distribution analyzer. (product name “LA-960”, manufactured by HORIBA, Ltd.).
  • the metal particle ink may contain metal particles having an average particle size of 500 nm or more, if necessary.
  • the electromagnetic wave shielding layer can be bonded by melting point depression of the nanometer-sized metal particles around the micrometer-sized metal particles.
  • the content of the metal particles in the metal particle ink is preferably 10% by mass to 90% by mass, more preferably 20% by mass to 50% by mass, relative to the total amount of the metal particle ink.
  • the content of the metal particles is 10% by mass or more, the surface resistivity is further lowered.
  • the content of the metal particles is 90% by mass or less, the jettability is improved when the metal particle ink is applied using an inkjet recording method.
  • the metal particle ink may contain, for example, a dispersant, a resin, a dispersion medium, a thickener, and a surface tension adjuster.
  • the metal particle ink may contain a dispersant adhering to at least part of the surface of the metal particles.
  • the dispersant together with the metal particles, substantially constitutes the metal colloid particles.
  • the dispersant has the effect of coating the metal particles to improve the dispersibility of the metal particles and to prevent aggregation.
  • the dispersant is preferably an organic compound capable of forming colloidal metal particles.
  • the dispersant is preferably an amine, carboxylic acid, alcohol, or resin dispersant from the viewpoint of electromagnetic wave shielding properties and dispersion stability.
  • the number of dispersants contained in the metal particle ink may be one, or two or more.
  • Amines include, for example, saturated or unsaturated aliphatic amines.
  • the amine is preferably an aliphatic amine having 4 to 8 carbon atoms.
  • the aliphatic amine having 4 to 8 carbon atoms may be linear or branched, and may have a ring structure.
  • aliphatic amines examples include butylamine, n-pentylamine, isopentylamine, hexylamine, 2-ethylhexylamine, and octylamine.
  • Amines having an alicyclic structure include cycloalkylamines such as cyclopentylamine and cyclohexylamine.
  • Aniline can be mentioned as an aromatic amine.
  • the amine may have functional groups other than amino groups.
  • Functional groups other than amino groups include, for example, hydroxy groups, carboxy groups, alkoxy groups, carbonyl groups, ester groups, and mercapto groups.
  • Carboxylic acids include, for example, formic acid, oxalic acid, acetic acid, hexanoic acid, acrylic acid, octylic acid, oleic acid, thianoic acid, ricinoleic acid, gallic acid, and salicylic acid.
  • a carboxy group that is part of a carboxylic acid may form a salt with a metal ion.
  • the number of metal ions that form a salt may be one, or two or more.
  • the carboxylic acid may have functional groups other than the carboxy group.
  • Functional groups other than carboxy groups include, for example, amino groups, hydroxy groups, alkoxy groups, carbonyl groups, ester groups, and mercapto groups.
  • Alcohol examples include terpene alcohol, allyl alcohol, and oleyl alcohol. Alcohol is easily coordinated to the surface of the metal particles and can suppress aggregation of the metal particles.
  • the resin dispersant includes, for example, a dispersant that has a nonionic group as a hydrophilic group and is uniformly soluble in a solvent.
  • resin dispersants include polyvinylpyrrolidone, polyethylene glycol, polyethylene glycol-polypropylene glycol copolymer, polyvinyl alcohol, polyallylamine, and polyvinyl alcohol-polyvinyl acetate copolymer.
  • the weight-average molecular weight of the resin dispersant is preferably 1,000 to 50,000, more preferably 1,000 to 30,000.
  • the content of the dispersant in the metal particle ink is preferably 0.5% by mass to 50% by mass, more preferably 1% by mass to 30% by mass, relative to the total amount of the metal particle ink. .
  • the metal particle ink preferably contains a dispersion medium.
  • the type of dispersion medium is not particularly limited, and examples thereof include hydrocarbons, alcohols, and water.
  • the dispersion medium contained in the metal particle ink may be of one type or two or more types.
  • the dispersion medium contained in the metal particle ink is preferably volatile.
  • the boiling point of the dispersion medium is preferably 50°C to 250°C, more preferably 70°C to 220°C, even more preferably 80°C to 200°C. When the boiling point of the dispersion medium is 50° C. to 250° C., there is a tendency that both the stability and the sinterability of the metal particle ink can be achieved.
  • Hydrocarbons include aliphatic hydrocarbons and aromatic hydrocarbons.
  • aliphatic hydrocarbons include saturated aliphatic hydrocarbons such as tetradecane, octadecane, heptamethylnonane, tetramethylpentadecane, hexane, heptane, octane, nonane, decane, tridecane, methylpentane, normal paraffin and isoparaffin, or unsaturated hydrocarbons. Aliphatic hydrocarbons are mentioned.
  • Aromatic hydrocarbons include, for example, toluene and xylene.
  • Alcohols include aliphatic alcohols and alicyclic alcohols.
  • the dispersing agent is preferably an amine or carboxylic acid.
  • aliphatic alcohols examples include heptanol, octanol (eg, 1-octanol, 2-octanol, 3-octanol, etc.), decanol (eg, 1-decanol, etc.), lauryl alcohol, tetradecyl alcohol, cetyl alcohol, 2- C6-20 aliphatic alcohols which may contain an ether bond in the saturated or unsaturated chain, such as ethyl-1-hexanol, octadecyl alcohol, hexadecenol and oleyl alcohol.
  • Alicyclic alcohols include, for example, cycloalkanols such as cyclohexanol; terpineol (including ⁇ , ⁇ , ⁇ isomers, or any mixture thereof), terpene alcohols such as dihydroterpineol; dihydroterpineol, myrtenol, Sobrerol, menthol, carveol, perillyl alcohol, pinocarveol, sobrerol, and verbenol.
  • cycloalkanols such as cyclohexanol
  • terpineol including ⁇ , ⁇ , ⁇ isomers, or any mixture thereof
  • terpene alcohols such as dihydroterpineol; dihydroterpineol, myrtenol, Sobrerol, menthol, carveol, perillyl alcohol, pinocarveol, sobrerol, and verbenol.
  • the dispersion medium may be water. From the viewpoint of adjusting physical properties such as viscosity, surface tension and volatility, the dispersion medium may be a mixed solvent of water and other solvents. Another solvent that is mixed with water is preferably an alcohol.
  • the alcohol used in combination with water is preferably an alcohol miscible with water and having a boiling point of 130° C. or less.
  • Alcohols include, for example, 1-propanol, 2-propanol, 1-butanol, 2-butanol, tert-butanol, 1-pentanol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, and propylene. Glycol monomethyl ether is mentioned.
  • the content of the dispersion medium in the metal particle ink is preferably 1% by mass to 50% by mass with respect to the total amount of the metal particle ink. If the content of the dispersion medium is 1% by mass to 50% by mass, sufficient electrical conductivity can be obtained as the ink for forming the electromagnetic wave shielding layer.
  • the content of the dispersion medium is more preferably 10% by mass to 45% by mass, and even more preferably 20% by mass to 40% by mass.
  • the metal particle ink may contain resin.
  • resins include polyesters, polyurethanes, melamine resins, acrylic resins, styrenic resins, polyethers, and terpene resins.
  • the number of resins contained in the metal particle ink may be one, or two or more.
  • the content of the resin in the metal particle ink is preferably 0.1% by mass to 5% by mass with respect to the total amount of the metal particle ink.
  • the metal particle ink may contain a thickening agent.
  • thickeners include clay minerals such as clay, bentonite and hectorite; cellulose derivatives such as methylcellulose, carboxymethylcellulose, hydroxyethylcellulose, hydroxypropylcellulose and hydroxypropylmethylcellulose; and polysaccharides such as xanthan gum and guar gum. be done.
  • the number of thickeners contained in the metal particle ink may be one, or two or more.
  • the content of the thickener in the metal particle ink is preferably 0.1% by mass to 5% by mass with respect to the total amount of the metal particle ink.
  • the metal particle ink may contain a surfactant.
  • a uniform electromagnetic wave shielding layer is easily formed.
  • the surfactant may be an anionic surfactant, a cationic surfactant, or a nonionic surfactant.
  • the surfactant is preferably a fluorosurfactant from the viewpoint that the surface tension can be adjusted with a small content.
  • the surfactant is preferably a compound having a boiling point of over 250°C.
  • the viscosity of the metal particle ink is not particularly limited, and may be from 0.01 Pa ⁇ s to 5000 Pa ⁇ s, preferably from 0.1 Pa ⁇ s to 100 Pa ⁇ s.
  • the viscosity of the metal particle ink is preferably 1 mPa ⁇ s to 100 mPa ⁇ s, more preferably 2 mPa ⁇ s to 50 mPa ⁇ s. More preferably, it is 3 mPa ⁇ s to 30 mPa ⁇ s.
  • the viscosity of the metal particle ink is a value measured at 25°C using a viscometer. Viscosity is measured using, for example, a VISCOMETER TV-22 viscometer (manufactured by Toki Sangyo Co., Ltd.).
  • the surface tension of the metal particle ink is not particularly limited, and is preferably 20 mN/m to 45 mN/m, more preferably 25 mN/m to 40 mN/m.
  • Surface tension is a value measured at 25°C using a surface tensiometer.
  • the surface tension of the metal particle ink is measured using, for example, DY-700 (manufactured by Kyowa Interface Science Co., Ltd.).
  • the metal particles may be commercially available products or may be produced by known methods.
  • Methods for producing metal particles include, for example, a wet reduction method, a vapor phase method, and a plasma method.
  • a wet reduction method capable of producing metal particles having an average particle size of 200 nm or less with a narrow particle size distribution.
  • a method for producing metal particles by a wet reduction method for example, JP 2017-37761, International Publication No. 2014-5763
  • heat treatment may be performed in order to adjust the content of each component contained in the metal particle ink within a predetermined range.
  • the heat treatment may be performed under reduced pressure or under normal pressure.
  • you may carry out in air
  • a metal complex ink is, for example, an ink composition in which a metal complex is dissolved in a solvent.
  • metals constituting metal complexes include silver, copper, gold, aluminum, magnesium, tungsten, molybdenum, zinc, nickel, iron, platinum, tin, copper, and lead.
  • the metal constituting the metal complex preferably contains at least one selected from the group consisting of silver, gold, platinum, nickel, palladium and copper, and more preferably contains silver. preferable.
  • the content of the metal contained in the metal complex ink is preferably 1% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, in terms of metal element, with respect to the total amount of the metal complex ink. Preferably, it is more preferably 7% by mass to 20% by mass.
  • a metal complex is obtained, for example, by reacting a metal salt with a complexing agent.
  • a method for producing a metal complex includes, for example, a method in which a metal salt and a complexing agent are added to an organic solvent and the mixture is stirred for a predetermined period of time.
  • the stirring method is not particularly limited, and can be appropriately selected from known methods such as a method of stirring using a stirrer, a stirring blade or a mixer, and a method of applying ultrasonic waves.
  • Metal salts include metal oxides, thiocyanates, sulfides, chlorides, cyanides, cyanates, carbonates, acetates, nitrates, nitrites, sulfates, phosphates, perchlorates, Tetrafluoroborates, acetylacetonate complexes, and carboxylates.
  • Complexing agents include amines, ammonium carbamate compounds, ammonium carbonate compounds, ammonium bicarbonate compounds, and carboxylic acids.
  • the complexing agent is at least selected from the group consisting of ammonium carbamate compounds, ammonium carbonate compounds, amines, and carboxylic acids having 8 to 20 carbon atoms. It is preferred that one species is included.
  • the metal complex has a structure derived from a complexing agent, and contains at least one selected from the group consisting of ammonium carbamate compounds, ammonium carbonate compounds, amines, and carboxylic acids having 8 to 20 carbon atoms.
  • a metal complex having a derived structure is preferred.
  • Amines that are complexing agents include, for example, ammonia, primary amines, secondary amines, tertiary amines, and polyamines.
  • Examples of primary amines having linear alkyl groups include methylamine, ethylamine, 1-propylamine, n-butylamine, n-pentylamine, n-hexylamine, heptylamine, octylamine, nonylamine, n - decylamine, undecylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, Hexadecylamine, heptadecylamine, and octadecylamine are included.
  • Examples of primary amines having branched alkyl groups include isopropylamine, sec-butylamine, tert-butylamine, isopentylamine, 2-ethylhexylamine, and tert-octylamine.
  • Examples of primary amines having an alicyclic structure include cyclohexylamine and dicyclohexylamine.
  • Examples of primary amines having a hydroxyalkyl group include ethanolamine, diethanolamine, triethanolamine, N-methylethanolamine, propanolamine, isopropanolamine, dipropanolamine, diisopropanolamine, tripropanolamine, and triisopropanol. Amines are mentioned.
  • Examples of primary amines having an aromatic ring include benzylamine, N,N-dimethylbenzylamine, phenylamine, diphenylamine, triphenylamine, aniline, N,N-dimethylaniline, N,N-dimethyl-p- Toluidine, 4-aminopyridine, and 4-dimethylaminopyridine.
  • secondary amines include dimethylamine, diethylamine, dipropylamine, dibutylamine, diphenylamine, dicyclopentylamine, and methylbutylamine.
  • Tertiary amines include, for example, trimethylamine, triethylamine, tripropylamine, and triphenylamine.
  • Polyamines include, for example, ethylenediamine, 1,3-diaminopropane, diethylenetriamine, triethylenetetramine, tetramethylenepentamine, hexamethylenediamine, tetraethylenepentamine, and combinations thereof.
  • the amine is preferably an alkylamine, preferably an alkylamine having 3 to 10 carbon atoms, more preferably a primary alkylamine having 4 to 10 carbon atoms.
  • the number of amines constituting the metal complex may be one, or two or more.
  • the molar ratio of the amine to the metal salt is preferably 1 to 15 times, more preferably 1.5 to 6 times.
  • the complex formation reaction is completed and a transparent solution is obtained.
  • Ammonium carbamate compounds as complexing agents include ammonium carbamate, methylammonium methylcarbamate, ethylammonium ethylcarbamate, 1-propylammonium 1-propylcarbamate, isopropylammonium isopropylcarbamate, butylammonium butylcarbamate, isobutylammonium isobutylcarbamate, amyl ammonium amyl carbamate, hexylammonium hexyl carbamate, heptylammonium heptyl carbamate, octylammonium octyl carbamate, 2-ethylhexylammonium 2-ethylhexyl carbamate, nonyl ammonium nonyl carbamate, and decyl ammonium decyl carbamate.
  • Ammonium carbonate-based compounds as complexing agents include ammonium carbonate, methylammonium carbonate, ethylammonium carbonate, 1-propylammonium carbonate, isopropylammonium carbonate, butylammonium carbonate, isobutylammonium carbonate, amylammonium carbonate, hexylammonium carbonate, and heptyl. Ammonium carbonate, octylammonium carbonate, 2-ethylhexylammonium carbonate, nonyl ammonium carbonate, and decylammonium carbonate.
  • Ammonium bicarbonate-based compounds as complexing agents include ammonium bicarbonate, methylammonium bicarbonate, ethylammonium bicarbonate, 1-propylammonium bicarbonate, isopropylammonium bicarbonate, butylammonium bicarbonate, isobutylammonium bicarbonate, amyl Ammonium bicarbonate, hexylammonium bicarbonate, heptyl ammonium bicarbonate, octylammonium bicarbonate, 2-ethylhexylammonium bicarbonate, nonyl ammonium bicarbonate, and decylammonium bicarbonate.
  • the amount of the ammonium carbamate-based compound, the ammonium carbonate-based compound, or the ammonium bicarbonate-based compound relative to the molar amount of the metal salt is preferably 0.01 to 1, more preferably 0.05 to 0.6.
  • Carboxylic acid as a complexing agent includes, for example, caproic acid, caprylic acid, pelargonic acid, 2-ethylhexanoic acid, capric acid, neodecanoic acid, undecanoic acid, lauric acid, myristic acid, palmitic acid, stearic acid, and palmitoleic acid. , oleic acid, linoleic acid, and linolenic acid.
  • the carboxylic acid is preferably a carboxylic acid having 8 to 20 carbon atoms, more preferably a carboxylic acid having 10 to 16 carbon atoms.
  • the content of the metal complex in the metal complex ink is preferably 10% by mass to 90% by mass, more preferably 10% by mass to 40% by mass, relative to the total amount of the metal complex ink.
  • the content of the metal complex is 10% by mass or more, the surface resistivity is further lowered.
  • the content of the metal complex is 90% by mass or less, the jettability is improved when the metal particle ink is applied using an inkjet recording method.
  • the metal complex ink preferably contains a solvent.
  • the solvent is not particularly limited as long as it can dissolve the components contained in the metal complex ink such as the metal complex. From the viewpoint of ease of production, the solvent preferably has a boiling point of 30°C to 300°C, more preferably 50°C to 200°C, and more preferably 50°C to 150°C.
  • the content of the solvent in the metal complex ink is such that the concentration of the metal ion relative to the metal complex (the amount of metal present as free ions per 1 g of the metal complex) is 0.01 mmol/g to 3.6 mmol/g. is preferred, and 0.05 mmol/g to 2 mmol/g is more preferred.
  • the metal ion concentration is within the above range, the metal complex ink has excellent fluidity and can obtain electromagnetic wave shielding properties.
  • Solvents include, for example, hydrocarbons, cyclic hydrocarbons, aromatic hydrocarbons, carbamates, alkenes, amides, ethers, esters, alcohols, thiols, thioethers, phosphines, and water. Only one solvent may be contained in the metal complex ink, Two or more types may be used.
  • the hydrocarbon is preferably a linear or branched hydrocarbon having 6 to 20 carbon atoms.
  • Hydrocarbons include, for example, pentane, hexane, heptane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, hexadecane, octadecane, nonadecane and icosane.
  • the cyclic hydrocarbon is preferably a cyclic hydrocarbon having 6 to 20 carbon atoms.
  • Cyclic hydrocarbons can include, for example, cyclohexane, cycloheptane, cyclooctane, cyclononane, cyclodecane, and decalin.
  • Aromatic hydrocarbons include, for example, benzene, toluene, xylene, and tetralin.
  • the ether may be any of straight-chain ether, branched-chain ether, and cyclic ether.
  • Ethers include, for example, diethyl ether, dipropyl ether, dibutyl ether, methyl-t-butyl ether, tetrahydrofuran, tetrahydropyran, dihydropyran, and 1,4-dioxane.
  • the alcohol may be any of primary alcohol, secondary alcohol, and tertiary alcohol.
  • alcohols examples include ethanol, 1-propanol, 2-propanol, 1-methoxy-2-propanol, 1-butanol, 2-butanol, 1-pentanol, 2-pentanol, 3-pentanol and 1-hexanol.
  • Ketones include, for example, acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone.
  • esters include methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate, isobutyl acetate, sec-butyl acetate, methoxybutyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol.
  • the metal complex ink may contain a reducing agent.
  • the metal complex ink contains a reducing agent, the reduction of the metal complex to the metal is promoted.
  • reducing agents include metal borohydride salts, aluminum hydride salts, amines, alcohols, organic acids, reducing sugars, sugar alcohols, sodium sulfite, hydrazine compounds, dextrin, hydroquinone, hydroxylamine, ethylene glycol, glutathione, and oxime compounds.
  • the reducing agent may be an oxime compound described in JP 2014-516463.
  • oxime compounds include acetone oxime, cyclohexanone oxime, 2-butanone oxime, 2,3-butanedione monoxime, dimethylglyoxime, methylacetoacetate monoxime, methylpyruvate monoxime, benzaldehyde oxime, and 1-indanone.
  • oximes 2-adamantanone oxime, 2-methylbenzamide oxime, 3-methylbenzamide oxime, 4-methylbenzamide oxime, 3-aminobenzamide oxime, 4-aminobenzamide oxime, acetophenone oxime, benzamide oxime, and pinacolone oxime .
  • the number of reducing agents contained in the metal complex ink may be one, or two or more.
  • the content of the reducing agent in the metal complex ink is not particularly limited. More preferably 1% by mass to 5% by mass.
  • the metal complex ink may contain resin.
  • the adhesion of the metal complex ink to the substrate is improved.
  • resins include polyester, polyethylene, polypropylene, polyacetal, polyolefin, polycarbonate, polyamide, fluorine resin, silicone resin, ethyl cellulose, hydroxyethyl cellulose, rosin, acrylic resin, polyvinyl chloride, polysulfone, polyvinylpyrrolidone, polyvinyl alcohol, polyvinyl-based Resins, polyacrylonitrile, polysulfides, polyamideimides, polyethers, polyarylates, polyetheretherketones, polyurethanes, epoxy resins, vinyl ester resins, phenolic resins, melamine resins, and urea resins.
  • the number of resins contained in the metal complex ink may be one, or two or more.
  • the metal complex ink further contains an inorganic salt, an organic salt, an inorganic oxide such as silica; Additives such as agents, surfactants, plasticizers, curing agents, thickeners, and silane coupling agents may be contained.
  • the total content of additives in the metal complex ink is preferably 20% by mass or less with respect to the total amount of the metal complex ink.
  • the viscosity of the metal complex ink is not particularly limited, and may be 0.01 Pa ⁇ s to 5000 Pa ⁇ s, preferably 0.1 Pa ⁇ s to 100 Pa ⁇ s.
  • the viscosity of the metal complex ink is preferably 1 mPa ⁇ s to 100 mPa ⁇ s, more preferably 2 mPa ⁇ s to 50 mPa ⁇ s. More preferably, it is 3 mPa ⁇ s to 30 mPa ⁇ s.
  • the viscosity of the metal complex ink is a value measured at 25°C using a viscometer. Viscosity is measured using, for example, a VISCOMETER TV-22 viscometer (manufactured by Toki Sangyo Co., Ltd.).
  • the surface tension of the metal complex ink is not particularly limited, and is preferably 20 mN/m to 45 mN/m, more preferably 25 mN/m to 35 mN/m.
  • Surface tension is a value measured at 25°C using a surface tensiometer.
  • the surface tension of the metal complex ink is measured using, for example, DY-700 (manufactured by Kyowa Interface Science Co., Ltd.).
  • a metal salt ink is, for example, an ink composition in which a metal salt is dissolved in a solvent.
  • metals constituting metal salts include silver, copper, gold, aluminum, magnesium, tungsten, molybdenum, zinc, nickel, iron, platinum, tin, copper, and lead.
  • the metal constituting the metal salt preferably contains at least one selected from the group consisting of silver, gold, platinum, nickel, palladium and copper, and more preferably contains silver. preferable.
  • the content of the metal contained in the metal salt ink is preferably 1% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, in terms of metal element, relative to the total amount of the metal salt ink. Preferably, it is more preferably 7% by mass to 20% by mass.
  • the content of the metal salt in the metal salt ink is preferably 10% by mass to 90% by mass, more preferably 10% by mass to 40% by mass, relative to the total amount of the metal salt ink.
  • the content of the metal salt is 10% by mass or more, the surface resistivity is further lowered.
  • the content of the metal salt is 90% by mass or less, the jettability is improved when the metal particle ink is applied using a spray method or an inkjet recording method.
  • metal salts include metal benzoates, halides, carbonates, citrates, iodates, nitrites, nitrates, acetates, phosphates, sulfates, sulfides, trifluoroacetates, and carboxylates.
  • salt may combine 2 or more types.
  • the metal salt is preferably a metal carboxylate from the viewpoint of electromagnetic wave shielding properties and storage stability.
  • the carboxylic acid forming the carboxylic acid salt is preferably at least one selected from the group consisting of formic acid and a carboxylic acid having 1 to 30 carbon atoms, more preferably a carboxylic acid having 8 to 20 carbon atoms. , and fatty acids having 8 to 20 carbon atoms are more preferred.
  • the fatty acid may be linear or branched, and may have a substituent.
  • Linear fatty acids include, for example, acetic acid, propionic acid, butyric acid, valeric acid, pentanoic acid, hexanoic acid, heptanoic acid, behenic acid, oleic acid, octanoic acid, nonanoic acid, decanoic acid, caproic acid, enanthic acid, and caprylic acid. , pelargonic acid, capric acid, and undecanoic acid.
  • branched fatty acids examples include isobutyric acid, isovaleric acid, ethylhexanoic acid, neodecanoic acid, pivalic acid, 2-methylpentanoic acid, 3-methylpentanoic acid, 4-methylpentanoic acid, 2,2-dimethylbutanoic acid, 2,3-dimethylbutanoic acid, 3,3-dimethylbutanoic acid, and 2-ethylbutanoic acid.
  • substituted carboxylic acids include hexafluoroacetylacetone acid, hydroangelic acid, 3-hydroxybutyric acid, 2-methyl-3-hydroxybutyric acid, 3-methoxybutyric acid, acetonedicarboxylic acid, 3-hydroxyglutaric acid, 2 -methyl-3-hydroxyglutarate, and 2,2,4,4-hydroxyglutarate.
  • the metal salt may be a commercially available product or may be produced by a known method.
  • a silver salt is manufactured by the following method, for example.
  • a silver compound for example, silver acetate
  • formic acid or a fatty acid having 1 to 30 carbon atoms in an amount equivalent to the molar equivalent of the silver compound.
  • the mixture is stirred for a predetermined time using an ultrasonic stirrer, and the precipitate formed is washed with ethanol and decanted. All these steps can be performed at room temperature (25°C).
  • the mixing ratio of the silver compound to the formic acid or the fatty acid having 1 to 30 carbon atoms is preferably 1:2 to 2:1, more preferably 1:1 in terms of molar ratio.
  • the metal salt ink preferably contains a solvent.
  • the type of solvent is not particularly limited as long as it can dissolve the metal salt contained in the metal salt ink.
  • the boiling point of the solvent is preferably 30°C to 300°C, more preferably 50°C to 300°C, and even more preferably 50°C to 250°C, from the viewpoint of ease of production.
  • the content of the solvent in the metal salt ink is such that the concentration of metal ions relative to the metal salt (amount of metal present as free ions per 1 g of metal salt) is 0.01 mmol/g to 3.6 mmol/g. is preferred, and 0.05 mmol/g to 2.6 mmol/g is more preferred.
  • the metal salt ink has excellent fluidity and electromagnetic wave shielding properties can be obtained.
  • Solvents include, for example, hydrocarbons, cyclic hydrocarbons, aromatic hydrocarbons, carbamates, alkenes, amides, ethers, esters, alcohols, thiols, thioethers, phosphines, and water.
  • the number of solvents contained in the metal salt ink may be one, or two or more.
  • the solvent preferably contains an aromatic hydrocarbon.
  • aromatic hydrocarbons include benzene, toluene, xylene, ethylbenzene, propylbenzene, isopropylbenzene, butylbenzene, isobutylbenzene, t-butylbenzene, trimethylbenzene, pentylbenzene, hexylbenzene, tetralin, benzyl alcohol, phenol, Cresol, methyl benzoate, ethyl benzoate, propyl benzoate, and butyl benzoate.
  • the number of aromatic rings in the aromatic hydrocarbon is preferably one or two, more preferably one.
  • the boiling point of the aromatic hydrocarbon is preferably 50°C to 300°C, more preferably 60°C to 250°C, even more preferably 80°C to 200°C, from the viewpoint of ease of production.
  • the solvent may contain aromatic hydrocarbons and hydrocarbons other than aromatic hydrocarbons.
  • Hydrocarbons other than aromatic hydrocarbons include linear hydrocarbons having 6 to 20 carbon atoms, branched hydrocarbons having 6 to 20 carbon atoms, and alicyclic hydrocarbons having 6 to 20 carbon atoms.
  • hydrocarbons other than aromatic hydrocarbons include pentane, hexane, heptane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, hexadecane, octadecane, nonadecane, decalin, cyclohexane, cycloheptane, and cyclooctane. , cyclononane, cyclodecane, decene, terpene compounds and icosane. Hydrocarbons other than aromatic hydrocarbons preferably contain unsaturated bonds.
  • Hydrocarbons other than aromatic hydrocarbons containing unsaturated bonds include terpene compounds.
  • Terpene compounds are classified into, for example, hemiterpenes, monoterpenes, sesquiterpenes, diterpenes, sesterterpenes, triterpenes, sesqualterpenes, and tetraterpenes, depending on the number of isoprene units that constitute the terpene compounds.
  • the terpene compound as the solvent may be any of the above, but monoterpene is preferred.
  • monoterpenes examples include pinene ( ⁇ -pinene, ⁇ -pinene), terpineol ( ⁇ -terpineol, ⁇ -terpineol, ⁇ -terpineol), myrcene, camphene, limonene (d-limonene, l-limonene, dipentene), Ocimene ( ⁇ -Ocimene, ⁇ -Ocimene), Alloocimene, Phellandrene ( ⁇ -Phellandrene, ⁇ -Phellandrene), Terpinene ( ⁇ -Terpinene, ⁇ -Terpinene), Terpinolene ( ⁇ -Terpinolene, ⁇ -Terpinolene, ⁇ - terpinolene, ⁇ -terpinolene), 1,8-cineole, 1,4-cineol, sabinene, paramentadiene, carene ( ⁇ -3-carene).
  • the ether may be any of straight-chain ether, branched-chain ether, and cyclic ether.
  • Ethers include, for example, diethyl ether, dipropyl ether, dibutyl ether, methyl-t-butyl ether, tetrahydrofuran, tetrahydropyran, dihydropyran, and 1,4-dioxane.
  • the alcohol may be any of primary alcohol, secondary alcohol, and tertiary alcohol.
  • alcohols examples include ethanol, 1-propanol, 2-propanol, 1-methoxy-2-propanol, 1-butanol, 2-butanol, 1-pentanol, 2-pentanol, 3-pentanol and 1-hexanol.
  • Ketones include, for example, acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone.
  • esters include methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate, isobutyl acetate, sec-butyl acetate, methoxybutyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol.
  • the viscosity of the metal salt ink is not particularly limited, and may be from 0.01 Pa ⁇ s to 5000 Pa ⁇ s, preferably from 0.1 Pa ⁇ s to 100 Pa ⁇ s.
  • the viscosity of the metal salt ink is preferably 1 mPa ⁇ s to 100 mPa ⁇ s, more preferably 2 mPa ⁇ s to 50 mPa ⁇ s. More preferably, it is 3 mPa ⁇ s to 30 mPa ⁇ s.
  • the viscosity of the metal salt ink is a value measured at 25°C using a viscometer. Viscosity is measured using, for example, a VISCOMETER TV-22 viscometer (manufactured by Toki Sangyo Co., Ltd.).
  • the surface tension of the metal salt ink is not particularly limited, and is preferably 20 mN/m to 45 mN/m, more preferably 25 mN/m to 35 mN/m.
  • Surface tension is a value measured at 25°C using a surface tensiometer.
  • the surface tension of the metal salt ink is measured using, for example, DY-700 (manufactured by Kyowa Interface Science Co., Ltd.).
  • the ink for forming an electromagnetic wave shielding layer preferably contains a metal complex or a metal salt.
  • the metal complex is preferably a metal complex having a structure derived from at least one selected from the group consisting of ammonium carbamate compounds, ammonium carbonate compounds, amines and carboxylic acids having 8 to 20 carbon atoms.
  • the metal salt is a metal carboxylate.
  • the ink for forming the electromagnetic wave shielding layer is applied to the ground area on the electronic substrate, the wind is blown against the ink for forming the electromagnetic wave shielding layer applied to the top surface of the electronic component, and the wind is blown. It is preferable to form the electromagnetic wave shield layer by solidifying the electromagnetic wave shield layer forming ink by heating (for example, baking described later) and/or ultraviolet irradiation.
  • the ultraviolet irradiation for solidifying the ink referred to here is sometimes referred to as "main exposure" in the present disclosure.
  • the above-described pinning exposure may be performed at least one of before and after blowing air onto the ink on the top surface of the electronic component.
  • an inkjet recording method As a method for applying the ink for forming the electromagnetic wave shielding layer, an inkjet recording method, a dispenser method, or a spray method is preferable, and an inkjet recording method is particularly preferable. Preferred aspects of the inkjet recording method are as described in the section "Film Forming Process".
  • the temperature of the electronic substrate when applying the electromagnetic wave shielding layer forming ink is preferably 20°C to 120°C, more preferably 28°C to 80°C.
  • the thickness of the entire electromagnetic shield layer is preferably 0.1 ⁇ m to 30 ⁇ m, more preferably 0.3 ⁇ m to 15 ⁇ m, from the viewpoint of electromagnetic shielding properties.
  • the thickness of the entire electromagnetic shield layer is measured using a laser microscope (product name "VK-X1000", manufactured by Keyence Corporation).
  • the average thickness per electromagnetic shield layer is obtained by dividing the thickness of the entire electromagnetic shield layer by the number of times the electromagnetic shield layer is formed (that is, the number of times the ink for forming the electromagnetic shield layer is applied).
  • the average thickness per electromagnetic wave shield layer is preferably 1.5 ⁇ m or less, more preferably 1.2 ⁇ m or less.
  • each electromagnetic shielding layer When the average thickness of each electromagnetic shielding layer is 1.5 ⁇ m or less, the electromagnetic shielding properties are further improved.
  • the second step may include a baking step of baking the electromagnetic shielding layer forming ink applied on the electronic substrate to solidify the electromagnetic shielding layer forming ink to form the electromagnetic shielding layer.
  • the firing temperature is preferably 250°C or less, more preferably 50°C to 200°C, and even more preferably 60°C to 180°C.
  • the firing time is preferably 1 minute to 120 minutes, more preferably 1 minute to 40 minutes. When the firing temperature and the firing time are within the above ranges, it is possible to reduce the influence of thermal deformation of the base material.
  • the insulating layer-forming ink (for example, the insulating protective layer-forming ink) is preferably active energy ray-curable ink.
  • the insulating layer-forming ink which is active energy ray-curable ink, preferably contains a polymerizable monomer and a polymerization initiator.
  • a polymerizable monomer refers to a monomer having at least one polymerizable group in one molecule.
  • the polymerizable group in the polymerizable monomer may be a cationically polymerizable group or a radically polymerizable group, but is preferably a radically polymerizable group from the viewpoint of curability.
  • the radically polymerizable group is preferably an ethylenically unsaturated group from the viewpoint of curability.
  • a monomer refers to a compound having a molecular weight of 1000 or less.
  • the molecular weight can be calculated from the type and number of atoms that constitute the compound.
  • the polymerizable monomer may be a monofunctional polymerizable monomer having one polymerizable group, or may be a polyfunctional polymerizable monomer having two or more polymerizable groups.
  • the monofunctional polymerizable monomer is not particularly limited as long as it is a monomer having one polymerizable group. From the viewpoint of curability, the monofunctional polymerizable monomer is preferably a monofunctional radically polymerizable monomer, more preferably a monofunctional ethylenically unsaturated monomer.
  • monofunctional ethylenically unsaturated monomers include monofunctional (meth)acrylates, monofunctional (meth)acrylamides, monofunctional aromatic vinyl compounds, monofunctional vinyl ethers and monofunctional N-vinyl compounds.
  • Examples of monofunctional (meth)acrylates include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, n-butyl (meth)acrylate, hexyl (meth)acrylate, and 2-ethylhexyl (meth)acrylate.
  • tert-octyl (meth)acrylate isoamyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, lauryl (meth)acrylate, stearyl (meth)acrylate, isostearyl (meth)acrylate, cyclohexyl (meth)acrylate acrylate, 4-n-butylcyclohexyl (meth)acrylate, 4-tert-butylcyclohexyl (meth)acrylate, bornyl (meth)acrylate, isobornyl (meth)acrylate, 2-ethylhexyl diglycol (meth)acrylate, butoxyethyl (meth)acrylate ) acrylate, 2-chloroethyl (meth) acrylate, 4-bromobutyl (meth) acrylate, cyanoethyl (meth) acrylate, benzyl (meth)
  • the monofunctional (meth)acrylate is preferably a monofunctional (meth)acrylate having an aromatic ring or an aliphatic ring, such as isobornyl (meth)acrylate, 4-tert-butylcyclohexyl (Meth)acrylate, dicyclopentenyl (meth)acrylate, or dicyclopentanyl (meth)acrylate is more preferable.
  • Examples of monofunctional (meth)acrylamides include (meth)acrylamide, N-methyl(meth)acrylamide, N-ethyl(meth)acrylamide, N-propyl(meth)acrylamide, Nn-butyl(meth)acrylamide, Nt-butyl (meth)acrylamide, N-butoxymethyl (meth)acrylamide, N-isopropyl (meth)acrylamide, N-methylol (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N,N-diethyl (meth)acrylamide and (meth)acryloylmorpholine.
  • monofunctional aromatic vinyl compounds include styrene, dimethylstyrene, trimethylstyrene, isopropylstyrene, chloromethylstyrene, methoxystyrene, acetoxystyrene, chlorostyrene, dichlorostyrene, bromostyrene, vinylbenzoic acid methyl ester, 3-methyl Styrene, 4-methylstyrene, 3-ethylstyrene, 4-ethylstyrene, 3-propylstyrene, 4-propylstyrene, 3-butylstyrene, 4-butylstyrene, 3-hexylstyrene, 4-hexylstyrene, 3-octyl Styrene, 4-octylstyrene, 3-(2-ethylhexyl)styrene, 4-(2-ethylhexyl)styrene
  • Monofunctional vinyl ethers include, for example, methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether, n-butyl vinyl ether, t-butyl vinyl ether, 2-ethylhexyl vinyl ether, n-nonyl vinyl ether, lauryl vinyl ether, cyclohexyl vinyl ether, cyclohexylmethyl vinyl ether, 4-methyl Cyclohexyl methyl vinyl ether, benzyl vinyl ether, dicyclopentenyl vinyl ether, 2-dicyclopentenoxyethyl vinyl ether, methoxyethyl vinyl ether, ethoxyethyl vinyl ether, butoxyethyl vinyl ether, methoxyethoxyethyl vinyl ether, ethoxyethoxyethyl vinyl ether, methoxypolyethylene glycol vinyl ether, tetrahydro Furfuryl vinyl ether, 2-hydroxyethyl vinyl ether, 2-hydroxy
  • Examples of monofunctional N-vinyl compounds include N-vinyl- ⁇ -caprolactam and N-vinylpyrrolidone.
  • the polyfunctional polymerizable monomer is not particularly limited as long as it has two or more polymerizable groups.
  • the polyfunctional polymerizable monomer is preferably a polyfunctional radically polymerizable monomer, more preferably a polyfunctional ethylenically unsaturated monomer.
  • polyfunctional ethylenically unsaturated monomers examples include polyfunctional (meth)acrylate compounds and polyfunctional vinyl ethers.
  • polyfunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, and propylene glycol di(meth)acrylate.
  • Polyfunctional vinyl ethers include, for example, 1,4-butanediol divinyl ether, ethylene glycol divinyl ether, diethylene glycol divinyl ether, triethylene glycol divinyl ether, polyethylene glycol divinyl ether, propylene glycol divinyl ether, butylene glycol divinyl ether, hexanediol divinyl ether, Vinyl ether, 1,4-cyclohexanedimethanol divinyl ether, bisphenol A alkylene oxide divinyl ether, bisphenol F alkylene oxide divinyl ether, trimethylolethane trivinyl ether, trimethylolpropane trivinyl ether, ditrimethylolpropane tetravinyl ether, glycerin trivinyl ether, pentaerythritol Tetravinyl ether, dipentaerythritol pentavinyl ether, dipentaerythritol
  • the polyfunctional polymerizable monomer is preferably a monomer having 3 to 11 carbon atoms in the part other than the (meth)acryloyl group.
  • the monomer having 3 to 11 carbon atoms in the portion other than the (meth)acryloyl group include 1,6-hexanediol di(meth)acrylate, dipropylene glycol di(meth)acrylate, and PO-modified neopentyl glycol.
  • the content of the polymerizable monomer is preferably 10% by mass to 98% by mass, more preferably 50% by mass to 98% by mass, relative to the total amount of the ink for forming the insulating protective layer.
  • Polymerization initiator examples of the polymerization initiator contained in the insulating layer forming ink include oxime compounds, alkylphenone compounds, acylphosphine compounds, aromatic onium salt compounds, organic peroxides, thio compounds, hexaarylbisimidazole compounds, borate compounds, Examples include azinium compounds, titanocene compounds, active ester compounds, compounds having a carbon-halogen bond, and alkylamines.
  • the polymerization initiator contained in the insulating layer forming ink is preferably at least one selected from the group consisting of oxime compounds, alkylphenone compounds, and titanocene compounds. It is more preferably an alkylphenone compound, and more preferably at least one selected from the group consisting of ⁇ -aminoalkylphenone compounds and benzylketal alkylphenones.
  • the content of the polymerization initiator is preferably 0.5% by mass to 20% by mass, more preferably 2% by mass to 10% by mass, relative to the total amount of the insulating layer forming ink.
  • the ink for forming the insulating protective layer may contain components other than the polymerization initiator and the polymerizable monomer.
  • Other ingredients include chain transfer agents, polymerization inhibitors, sensitizers, surfactants and additives.
  • the insulating layer forming ink may contain at least one chain transfer agent.
  • the chain transfer agent is preferably a polyfunctional thiol.
  • polyfunctional thiols include aliphatic thiols such as hexane-1,6-dithiol, decane-1,10-dithiol, dimercaptodiethyl ether, dimercaptodiethyl sulfide, xylylene dimercaptan, 4,4'- Aromatic thiols such as dimercaptodiphenyl sulfide and 1,4-benzenedithiol; Ethylene Glycol Bis (Mercaptoacetate), Polyethylene Glycol Bis (Mercaptoacetate), Propylene Glycol Bis (Mercaptoacetate), Glycerin Tris (Mercaptoacetate), Trimethylolethane Tris (Mercaptoacetate), Trimethylolpropane Tris (Mercaptoacetate), Penta poly(mercaptoacetate) of polyhydric alcohols such as erythritol tetrakis (mercaptoacetate), dipentaerythrito
  • the insulating layer forming ink may contain at least one polymerization inhibitor.
  • Polymerization inhibitors include p-methoxyphenol, quinones (e.g., hydroquinone, benzoquinone, methoxybenzoquinone, etc.), phenothiazine, catechols, alkylphenols (e.g., dibutylhydroxytoluene (BHT), etc.), alkylbisphenols, dimethyldithiocarbamine.
  • the polymerization inhibitor is preferably at least one selected from p-methoxyphenol, catechols, quinones, alkylphenols, TEMPO, TEMPOL, and tris(N-nitroso-N-phenylhydroxylamine) aluminum salt, and p -Methoxyphenol, hydroquinone, benzoquinone, BHT, TEMPO, TEMPOL, and tris(N-nitroso-N-phenylhydroxylamine) aluminum salt is more preferred.
  • the content of the polymerization inhibitor is preferably 0.01% by mass to 2.0% by mass, and 0.01% by mass to 2.0% by mass, based on the total amount of the insulating protective layer-forming ink. 02% by mass to 1.0% by mass is more preferred, and 0.03% by mass to 0.5% by mass is particularly preferred.
  • the insulating layer forming ink may contain at least one sensitizer.
  • sensitizers include polynuclear aromatic compounds (e.g., pyrene, perylene, triphenylene, and 2-ethyl-9,10-dimethoxyanthracene), xanthene compounds (e.g., fluorescein, eosin, erythrosine, rhodamine B, and Rose Bengal), cyanine compounds (e.g., thiacarbocyanine and oxacarbocyanine), merocyanine compounds (e.g., merocyanine and carbomerocyanine), thiazine compounds (e.g., thionine, methylene blue, and toluidine blue), acridine compounds compounds (e.g., acridine orange, chloroflavin, and acriflavin), anthraquinones (e.g., anthraquinone), squalium compounds (e.g., squalium), coumarin compounds (e.g.
  • the content of the sensitizer is not particularly limited, but is 1.0% by mass to 15.0% by mass with respect to the total amount of the insulating protective layer-forming ink. and more preferably 1.5% by mass to 5.0% by mass.
  • the insulating layer forming ink may contain at least one surfactant.
  • surfactants include those described in JP-A-62-173463 and JP-A-62-183457.
  • surfactants include anionic surfactants such as dialkylsulfosuccinates, alkylnaphthalenesulfonates, and fatty acid salts; polyoxyethylene alkyl ethers, polyoxyethylene alkyl allyl ethers, acetylene glycol, polyoxyethylene •
  • Nonionic surfactants such as polyoxypropylene block copolymers; and cationic surfactants such as alkylamine salts and quaternary ammonium salts.
  • the surfactant may be a fluorosurfactant or a silicone surfactant.
  • the content of the surfactant is preferably 0.5% by mass or less, more preferably 0.1% by mass, based on the total amount of the insulating layer forming ink. The following are more preferable.
  • the lower limit of the surfactant content is not particularly limited.
  • the insulating layer forming ink is less likely to spread after the insulating layer forming ink is applied. Therefore, the outflow of the ink for forming the insulating layer is suppressed, and the electromagnetic wave shielding property is improved.
  • the insulating layer forming ink may contain at least one organic solvent.
  • organic solvents examples include (poly)alkylene glycols such as ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, triethylene glycol monomethyl ether, propylene glycol monomethyl ether (PGME), dipropylene glycol monomethyl ether, and tripropylene glycol monomethyl ether.
  • polyalkylene glycols such as ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, triethylene glycol monomethyl ether, propylene glycol monomethyl ether (PGME), dipropylene glycol monomethyl ether, and tripropylene glycol monomethyl ether.
  • (poly)alkylene glycol dialkyl ethers such as ethylene glycol dibutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol diethyl ether, tetraethylene glycol dimethyl ether;
  • (poly)alkylene glycol acetates such as diethylene glycol acetate;
  • (poly)alkylene glycol diacetates such as ethylene glycol diacetate and propylene glycol diacetate;
  • (poly)alkylene glycol monoalkyl ether acetates such as ethylene glycol monobutyl ether acetate and propylene glycol monomethyl ether acetate; ketones such as methyl ethyl ketone and cyclohexanone; Lactones such as ⁇ -butyrolactone; Esters such as ethyl acetate, propyl acetate, butyl acetate, 3-methoxybutyl
  • the content of the organic solvent is preferably 70% by mass or less, more preferably 50% by mass or less, relative to the total amount of the insulating layer forming ink. preferable.
  • the lower limit of the content of the organic solvent is not particularly limited.
  • the insulating layer-forming ink may contain additives such as a co-sensitizer, an ultraviolet absorber, an antioxidant, an anti-fading agent, and a basic compound, if necessary.
  • the pH of the insulating layer-forming ink is preferably 7 to 10, more preferably 7.5 to 9.5, from the viewpoint of improving ejection stability when applied using an inkjet recording method. .
  • the pH is measured at 25° C. using a pH meter, for example, using a pH meter manufactured by DKK Toa (model number “HM-31”).
  • the viscosity of the insulating layer forming ink is preferably 0.5 mPa ⁇ s to 60 mPa ⁇ s, more preferably 2 mPa ⁇ s to 40 mPa ⁇ s. Viscosity is measured at 25° C. using a viscometer, for example, using a TV-22 viscometer manufactured by Toki Sangyo Co., Ltd.
  • the surface tension of the insulating layer forming ink is preferably 60 mN/m or less, more preferably 20 mN/m to 50 mN/m, even more preferably 25 mN/m to 45 mN/m.
  • the surface tension is measured at 25° C. using a surface tensiometer, for example, by a plate method using an automatic surface tensiometer manufactured by Kyowa Interface Science Co., Ltd. (product name “CBVP-Z”).
  • an ink for forming an insulating layer is applied to the electronic base material using an inkjet recording method, a dispenser coating method, or a spray coating method, and the insulating layer provided on the top surface of the electronic component. Air is blown onto the forming ink, and then the blown insulating layer forming ink is cured to form an insulating protective layer.
  • the method of applying the ink for forming the insulating layer is preferably an inkjet recording method from the viewpoint of reducing the thickness of the ink film formed by applying a small amount of droplets in one application.
  • the details of the inkjet recording method are as described above.
  • the method of curing the insulating layer forming ink is not particularly limited, but for example, a method of irradiating the insulating layer forming ink applied on the substrate with an active energy ray (for example, main exposure) can be used.
  • UV ultraviolet rays
  • visible rays examples include visible rays, and electron beams, and among them, ultraviolet rays (hereinafter also referred to as "UV") are preferred.
  • the peak wavelength of ultraviolet rays is preferably 200 nm to 405 nm, more preferably 250 nm to 400 nm, even more preferably 300 nm to 400 nm.
  • the exposure dose in the irradiation of active energy rays is preferably 100 mJ/cm 2 to 5000 mJ/cm 2 and more preferably 300 mJ/cm 2 to 1500 mJ/cm 2 .
  • UV-LEDs light-emitting diodes
  • UV-LDs laser diodes
  • the light source for ultraviolet irradiation is preferably a metal halide lamp, a high-pressure mercury lamp, a medium-pressure mercury lamp, a low-pressure mercury lamp, or a UV-LED.
  • the step of obtaining the insulating protective layer it is preferable to repeat the steps of applying the insulating ink and irradiating the active energy ray two or more times in order to obtain the insulating protective layer with a desired thickness.
  • the thickness of the insulating protective layer is preferably 5 ⁇ m to 5000 ⁇ m, more preferably 10 ⁇ m to 2000 ⁇ m.
  • the above-described pinning exposure may be performed at least one of before and after the air blows to the ink on the top surface of the electronic component. good.
  • Example 1 ⁇ Preparation of Ink for Forming Conductive Layer> 40 g of silver neodecanoate was added to a 200 mL three-necked flask. Next, 30.0 g of trimethylbenzene and 30.0 g of terpineol were added and stirred to obtain a solution containing silver salt. This solution was filtered using a PTFE (polytetrafluoroethylene) membrane filter with a pore size of 0.45 ⁇ m to obtain an ink for forming a conductive layer.
  • PTFE polytetrafluoroethylene
  • a wiring board with electronic components was prepared.
  • the wiring board and the electronic component are connected by a plurality of solder balls, and minute gaps exist between the electronic component and the wiring board and between the plurality of solder balls.
  • This gap was filled with an underfill material from Zymet using a dispenser from Musashi Engineering, and then left to stand in a constant temperature oven for 20 minutes to fill the gap.
  • an electronic substrate having the same structure as the electronic substrate 110 shown in FIGS. 15A and 15B (that is, an electronic substrate as a stepped substrate) was prepared. Each size in the prepared electronic substrate is as follows.
  • Width of ground electrode 600 ⁇ m Height of ground electrode (height of portion protruding above wiring board): 25 ⁇ m Area surrounded by ground electrodes (ground area): 10.65 mm x 10.65 mm Electronic component size and shape: 10.00 mm x 10.00 mm rectangular Height of electronic component (height from the surface of the wiring board to the top surface of the electronic component): 500 ⁇ m Distance between electronic component and ground electrode: 50 ⁇ m
  • the inkjet, the dryer, and the pinning light source are arranged in this order from the upstream side in the transport direction of the stage.
  • An electronic substrate was fixed on the stage of the inkjet recording apparatus with an adhesive tape.
  • the electronic board was fixed on the stage so that one of the four sides of the electronic component on the electronic board was parallel to the nozzle row of the inkjet head.
  • the ink for forming a conductive layer was mounted on the inkjet recording apparatus, and the ink for forming a conductive layer was applied onto the electronic substrate while the electronic substrate was being conveyed.
  • the resolution (dpi) in the direction perpendicular to the direction of relative movement and the resolution (dpi) in the direction of relative movement were adjusted to the values shown in Table 1, respectively.
  • the application area of the ink for forming the conductive layer is 10.40 mm x 10, including the electronic component (rectangular area of 10.00 mm x 10.00 mm) and protruding from each of the four sides of the electronic component by 0.20 mm. A rectangular area of 0.40 mm.
  • the application of the conductive layer forming ink described above was repeated three times.
  • a drier was used to blow air at a temperature of 23° C. and a wind speed of 3 m/s in the following directions to the conductive layer forming ink applied on the top surface of the electronic component of the electronic substrate.
  • the direction in which the air was blown was such that the elevation angle was 90° from above the center of the top surface of the electronic component.
  • the time from the end of application of the ink for forming the conductive layer to the start of air blowing was adjusted to be 0.44 seconds.
  • pinning exposure was applied to the blown ink with a 385 nm LED light source (13 W/cm 2 , manufactured by Kyocera). The exposure amount of the pinning exposure was set to 5 J/cm 2 .
  • the time from the end of air blowing to the conductive layer forming ink to the start of pinning exposure was adjusted to 0.44 seconds.
  • the conductive layer forming ink applied to the electronic substrate was heated (that is, baked) at 150° C. for 20 minutes to obtain a conductive layer as an electromagnetic wave shield layer. As described above, an electronic device of Example 1 was obtained.
  • the thickness of the conductive layer was measured based on an optical micrograph taken of a cross section of the electronic device. As the thickness of the conductive layer, thickness of the conductive layer on the top surface of the electronic member, The thickness of the conductive layer on the side surface of the electronic member, and The thickness of the conductive layer on the corner between the top surface and the side surface of the electronic member was measured. Based on the measurement results, the average thickness and thickness variation were obtained.
  • Ink splattering to conductive layer non-formation area Ink splattering to conductive layer non-formation area, Ink splattering to the conductive layer non-formed region was evaluated as follows. Using an optical microscope (200x magnification), three locations on each side at a predetermined distance from the edge of the electronic component were observed to confirm the presence or absence of scattering of the conductive ink. Based on the obtained results, ink splattering to the conductive layer non-formed region was evaluated according to the following evaluation criteria. In the following evaluation criteria, "5" is the most excellent rank for suppressing ink splattering to the conductive layer non-formed region.
  • Electromagnetic shielding performance Using WM7400 (manufactured by Morita Tech Co., Ltd.), leaked electromagnetic waves were measured in the range up to 3 GHz, and the electromagnetic shielding performance of the conductive layer (electromagnetic shielding layer) was evaluated according to the following evaluation criteria. In the following evaluation criteria, "5" is the most excellent rank for electromagnetic wave shielding performance.
  • Electromagnetic Shielding Performance- 5 Less than 20 dB 4: 20 dB or more and less than 30 dB 3: 30 dB or more and less than 50 dB 2: 50 dB or more and less than 70 dB 1: 70 dB or more
  • Example 2 The same operation as in Example 1 was performed except that the resolution (dpi) in the direction of relative movement was changed as shown in Table 1 in the application of the ink for forming the conductive layer (three times). Table 1 shows the results.
  • Examples 3 to 7 The same operation as in Example 2 was performed, except that the speed of the wind blown against the conductive layer forming ink was changed as shown in Table 1. Table 1 shows the results.
  • Example 8 The same operation as in Example 2 was performed except that the wind was collected using an exhaust duct and a fan. Table 1 shows the results.
  • Example 9 The same operation as in Example 8 was performed except that the direction in which the wind was blown was changed to a direction in which the elevation angle was 30° (see FIGS. 5 and 7B). Table 1 shows the results. Regarding the direction of blowing air, more specifically, the direction of air blown from the dryer is different from the side where the inkjet head is arranged as viewed from the dryer, similar to the example shown in FIG. It was made to contain components in opposite directions.
  • Example 10 By changing the arrangement of the pinning light source and the dryer, the timing of performing the pinning exposure on the ink applied to the electronic substrate was changed from after blowing the wind against the ink to before blowing the wind against the ink. The same procedure as in Example 8 was carried out.
  • Example 11 The same operation as in Example 10 was performed, except that the wind speed for blowing against the conductive layer forming ink was changed as shown in Table 1. Table 1 shows the results.
  • Example 1 The same operation as in Example 2 was performed, except that the air for forming the conductive layer was not blown. Table 1 shows the results.
  • Example 8 From the comparison between Example 2 and Example 8, it can be seen that when the wind is collected (Example 8), the scattering of the ink to the conductive layer non-formed region is further suppressed.
  • Example 2 From the comparison between Example 1 and Example 2, when the dot resolution in the direction of relative movement is higher than the dot resolution in the direction perpendicular to the direction of relative movement (Example 2), from the side of the electronic component It can be seen that variations in the thickness of the conductive layer (that is, film) over the top surface can be further suppressed.
  • Example 101 to 111, Comparative Example 101 Electronic devices of Examples 101 to 111 and Comparative Example 101 were obtained in the same manner as in Examples 1 to 11 and Comparative Example 1 except for the following points. Regarding the obtained electronic device, the thickness of the insulating layer and the scattering of the insulating layer-forming ink were evaluated in the same manner as the evaluation of the thickness of the conductive layer and the scattering of the conductive layer-forming ink in Example 1. Table 2 shows the results.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)

Abstract

Provided is a film formation method and an application thereof, the method comprising: a step for preparing a stepped substrate, which is a substrate having a step in the substrate thickness direction; and a film formation step for discharging an ink from an inkjet head to supply the ink onto at least the top surface of the step of the stepped substrate, blowing air on to the ink which has come into contact with the top surface of the step to form a film that covers at least the top surface and the side surfaces of the step,

Description

膜の形成方法、電子デバイスの製造方法、及び膜形成装置Film forming method, electronic device manufacturing method, and film forming apparatus

 本開示は、膜の形成方法、電子デバイスの製造方法、及び膜形成装置に関する。 The present disclosure relates to a film forming method, an electronic device manufacturing method, and a film forming apparatus.

 段差(例えば、凹凸パターン、電子部品等)を有する基板に対し、液体を塗布する技術について、様々な検討が行われている。 Various studies are being conducted on techniques for applying liquid to substrates with steps (e.g., uneven patterns, electronic components, etc.).

 特許文献1には、基板上に塗布された溶液によって形成される薄膜にムラが発生するのを防止することができる溶液の塗布装置として、以下の塗布装置が開示されている。
 特許文献1で開示されている塗布装置は、
 上面に凹部と凸部が規則的に形成された凹凸パターンを有する基板の上記凹部と凸部に溶液をインクジェット方式で吐出して塗布する溶液の塗布装置であって、
 所定方向に沿って配置された複数のノズルを有し、この複数のノズルから一定のタイミングでドット状の上記溶液を上記基板に塗布する塗布ヘッドと、
 上記基板と上記塗布ヘッドとを相対的に移動させる駆動手段と、
 この駆動手段による上記基板と上記塗布ヘッドとの相対的移動の際、上記各ノズルから吐出されて上記基板上に塗布されるドット状の溶液の各列がそれぞれ、上記基板上面の隣接する、上記凹凸パターンの延長方向に延びる2つ以上の上記凸部に跨るように、上記凹凸パターンの上記延長方向に対して上記相対的移動方向を所定角度ずらすように制御する制御手段と、
を備える溶液の塗布装置である。
Patent Literature 1 discloses the following coating device as a solution coating device capable of preventing unevenness in a thin film formed by a solution coated on a substrate.
The coating device disclosed in Patent Document 1 is
A solution applicator for applying a solution to the recesses and protrusions of a substrate having an uneven pattern in which recesses and protrusions are regularly formed on the upper surface by inkjet method,
a coating head having a plurality of nozzles arranged along a predetermined direction and coating the substrate with the dot-shaped solution from the plurality of nozzles at a constant timing;
a driving means for relatively moving the substrate and the coating head;
When the substrate and the coating head are moved relative to each other by the driving means, each line of the dot-shaped solution discharged from each of the nozzles and coated on the substrate is arranged adjacent to the upper surface of the substrate. control means for controlling the direction of relative movement to be shifted by a predetermined angle with respect to the extending direction of the uneven pattern so as to straddle two or more of the protrusions extending in the extending direction of the uneven pattern;
It is a solution coating device comprising:

 特許文献2には、所定量の封止剤を所定の塗布回数で重ねるように塗布しながらも、封止剤の浸透待ち時間なく連続的に塗布することのできる封止剤の供給制御方法を提供する封止剤の供給制御方法として、以下の供給制御方法が開示されている。
 特許文献2で開示されている供給制御方法は、
 封止剤を吐出する塗布ヘッドと電子部品を実装した回路基板とを相対移動させながら、各電子部品と上記回路基板との各間に複数回繰り返して重ね塗布する封止剤の供給を制御する方法において、
 電子部品1個当たりに塗布すべき封止剤の供給量を、封止剤の粘性および電子部品のサイズに対応した塗布回数に分割し、且つその封止剤の分割量を、塗布回数が増えるにしたがって交互に増減する量に設定して各塗布時に割り当てるとともに、その各塗布時にそれぞれ割り当てた量の封止剤を、塗布ヘッドの吐出圧力の可変による上記塗布ヘッドからの封止剤の吐出量の制御により設定して供給するようにした、
封止剤の供給制御方法である。
Patent Document 2 discloses a sealant supply control method capable of continuously applying a predetermined amount of sealant at a predetermined number of times while applying the sealant continuously without a waiting time for permeation of the sealant. The following supply control method is disclosed as a supply control method for the sealant to be provided.
The supply control method disclosed in Patent Document 2 is
While relatively moving the coating head that discharges the sealant and the circuit board on which the electronic component is mounted, the supply of the sealant that is repeatedly applied multiple times between each electronic component and the circuit board is controlled. in the method
The supply amount of the sealant to be applied to each electronic component is divided into the number of times of application corresponding to the viscosity of the sealant and the size of the electronic component, and the divided amount of the sealant is increased as the number of times of application increases. The amount of the sealant is set to alternately increase or decrease according to the above and is allocated for each application, and the amount of the sealant that is allocated for each application is changed from the application head by varying the discharge pressure of the application head. It was set and supplied by the control of
This is a method of controlling the supply of a sealant.

 特許文献1:特許第5244758号公報
 特許文献2:特開平11-47657号公報
Patent Document 1: Japanese Patent No. 5244758 Patent Document 2: Japanese Patent Application Laid-Open No. 11-47657

 基板厚さ方向の段差を有する基板である段差付き基板に対し、少なくとも段差の天面(即ち、上面)及び側面を被覆する膜をインクジェット法によって膜を形成する場合がある。
 段差付き基板の一例としては、配線基板と配線基板上に配置されている電子部品とを備
える電子基板が挙げられる。
In some cases, a film that covers at least the top surface (that is, the upper surface) and side surfaces of a step is formed by an inkjet method on a substrate with a step, which is a substrate having a step in the thickness direction of the substrate.
An example of a stepped board is an electronic board including a wiring board and electronic components arranged on the wiring board.

 本発明者等の検討により、インクジェット法による上記膜の形成において、段差の天面上(即ち、上面上)から段差の側面上にかけての膜の厚さバラつきが大きくなる場合があることが判明した。 The inventors of the present invention have found that, in the formation of the film by the inkjet method, the thickness of the film from the top surface of the step (that is, the top surface) to the side surface of the step may vary greatly. .

 膜の厚さバラつきが大きくなる場合として、具体的には、例えば;
段差の側面上の膜の厚さが、段差の天面上の膜の厚さと比較して薄くなりすぎる場合;
段差の側面と天面とのつなぎ目の角部上の膜の厚さが、段差の天面上の膜の厚さと比較して薄くなりすぎる場合;
等が挙げられる。
Specifically, as a case where the thickness variation of the film becomes large, for example:
When the thickness of the film on the side surface of the step is too thin compared to the thickness of the film on the top surface of the step;
When the thickness of the film on the corner of the joint between the side surface and the top surface of the step is too thin compared to the thickness of the film on the top surface of the step;
etc.

 本開示の一態様の課題は、基板厚さ方向の段差を有する基板である段差付き基板に対し、少なくとも段差の天面及び段差の側面を被覆する膜をインクジェット法によって膜を形成するにあたり、段差の天面上から段差の側面上にかけての膜の厚さバラつきを抑制できる、膜の形成方法及び膜形成装置を提供することである。
 本開示の別の一態様の課題は、配線基板と配線基板上に配置されている電子部品とを備える電子基板上の少なくとも電子部品の天面及び電子部品の側面を含む領域に、インクジェット法によって絶縁層及び/又は導電層を形成して電子デバイスを形成するにあたり、電子部品の天面上から電子部品の側面上にかけての絶縁層及び/又は導電層の厚さバラつきを抑制できる電子デバイスの製造方法を提供することである。
An object of one aspect of the present disclosure is to form a film that covers at least the top surface of the step and the side surface of the step on a stepped substrate, which is a substrate having a step in the substrate thickness direction, by an inkjet method. To provide a film forming method and a film forming apparatus capable of suppressing variation in film thickness from the top surface of a step to the side surface of a step.
An object of another aspect of the present disclosure is to apply ink by an inkjet method to a region including at least the top surface of the electronic component and the side surface of the electronic component on the electronic substrate including the wiring board and the electronic component arranged on the wiring board. Manufacture of an electronic device capable of suppressing variations in the thickness of the insulating layer and/or conductive layer from the top surface of the electronic component to the side surface of the electronic component when the insulating layer and/or conductive layer are formed to form the electronic device. to provide a method.

 上記課題を解決するための具体的手段には、以下の態様が含まれる。
<1> 基板厚さ方向の段差を有する基板である段差付き基板を準備する工程と、
 段差付き基板における少なくとも段差の天面上に、インクジェットヘッドからインクを吐出することによりインクを付与し、段差の天面上に付与されたインクに対して風を吹き付けることにより、少なくとも段差の天面及び段差の側面を被覆する膜を形成する膜形成工程と、
を含む、
膜の形成方法。
<2> 風の風速が、1m/s以上30m/s未満である、<1>に記載の膜の形成方法。
<3> 膜形成工程は、風を回収することを含む、<1>又は<2>に記載の膜の形成方法。
<4> 膜形成工程は、更に、風が吹き付けられたインクに対し、ピニング露光を施すことを含み、
 風の吹き付けの開始からピニング露光開始までの時間が、1秒以下である、
<1>~<3>のいずれか1つに記載の膜の形成方法。
<5> 膜形成工程は、更に、段差の天面上に付与されたインクであって風が吹き付けられる前のインクに対し、ピニング露光を施すことを含む、
<1>~<4>のいずれか1つに記載の膜の形成方法。
<6> 風は、風吹出機から吹き出され、
 風の向きは、風吹出機から見てインクジェットヘッドが配置されている側とは反対向きの成分を含む、
<1>~<5>のいずれか1つに記載の膜の形成方法。
<7> 膜形成工程におけるインクの付与は、段差付き基板とインクジェットヘッドとを相対移動させながら行い、
 段差付き基板に付与されたインクにおいて、相対移動の方向のドット解像度が、相対移動の方向に対して直交する方向のドット解像度よりも高い、
<1>~<6>のいずれか1つに記載の膜の形成方法。
<8> 風が、不活性ガスの気流であり、
 インクが、重合性化合物を含有する活性エネルギー線硬化型インクである、
<1>~<7>のいずれか1つに記載の膜の形成方法。
<9> 段差付き基板は、ベース基板と、ベース基板上に配置されている部品と、を含み、ベース基板と部品との間に、隙間が存在する、
<1>~<8>のいずれか1つに記載の膜の形成方法。
<10> 更に、膜形成工程の前に、膜が形成される領域を囲む隔壁を、インクジェットヘッドからインクを吐出することにより形成する隔壁形成工程を含む、
<1>~<9>のいずれか1つに記載の膜の形成方法。
<11> 更に、膜形成工程の前に、少なくとも膜が形成される領域に、親水処理を施す工程を含む、
<1>~<10>のいずれか1つに記載の膜の形成方法。
<12> 配線基板と、配線基板上に配置されている電子部品と、を備える電子基板を準備する工程と、
 電子基板上に、絶縁層及び導電層の少なくとも一方を形成して電子デバイスを得る工程と、
を含み、
 絶縁層及び導電層の少なくとも一方を、<1>~<11>のいずれか1つに記載の膜の形成方法によって形成する、
電子デバイスの製造方法。
<13> 基板厚さ方向の段差を有する基板である段差付き基板における少なくとも段差の天面上に、インクを付与するインクジェットヘッドと、
 段差の天面上に付与されたインクに対し、風を吹き付ける風吹出機と、
を備え、
 段差付き基板とインクジェットヘッドとが相対移動し、
 インクジェットヘッドと風吹出機とが、相対移動の方向に配列されている、膜形成装置。
<14> 更に、風を回収する風回収機を備える、
<13>に記載の膜形成装置。
<15> 風吹出機から吹き出される風の向きが、風吹出機から見てインクジェットヘッドが配置されている側とは反対向きの成分を含む、
<13>又は<14>に記載の膜形成装置。
<16> 風吹出機を2つ備え、
 2つの風吹出機の間に、インクジェットヘッドが配置され、
 相対移動が、往復移動である、
<13>~<15>のいずれか1つに記載の膜形成装置。
<17> 風吹出機は、風の吹き出しを行うオン状態と、風の吹き出しを停止するオフ状態と、の切り替えを行うオンオフ機能を備える、
<13>~<16>のいずれか1つに記載の膜形成装置。
<18> 更に、風が吹き付けられたインクに対し、ピニング露光を施すピニング露光機を備える、
<13>~<17>のいずれか1つに記載の膜形成装置。
<19> 更に、段差の天面上に付与されたインクであって風が吹き付けられる前のインクに対し、ピニング露光を施すピニング露光機を備える、
<13>~<18>のいずれか1つに記載の膜形成装置。
Specific means for solving the above problems include the following aspects.
<1> Preparing a stepped substrate, which is a substrate having a step in the thickness direction of the substrate;
Ink is applied to at least the top surface of the steps in the substrate with steps by ejecting ink from an inkjet head, and by blowing air against the ink applied to the top surface of the steps, at least the top surface of the steps. and a film forming step of forming a film covering the side surface of the step;
including,
Membrane formation method.
<2> The method for forming a film according to <1>, wherein the wind speed is 1 m/s or more and less than 30 m/s.
<3> The method of forming a film according to <1> or <2>, wherein the film forming step includes collecting air.
<4> The film forming step further includes subjecting the ink blown by the wind to pinning exposure,
The time from the start of wind blowing to the start of pinning exposure is 1 second or less.
The method for forming a film according to any one of <1> to <3>.
<5> The film forming step further includes subjecting the ink applied on the top surface of the step to the ink before the wind is blown to a pinning exposure.
The method for forming a film according to any one of <1> to <4>.
<6> The wind is blown out from the wind blower,
The direction of the wind includes a component in the opposite direction to the side where the inkjet head is arranged when viewed from the wind blower,
The method for forming a film according to any one of <1> to <5>.
<7> Applying the ink in the film forming step is performed while relatively moving the stepped substrate and the inkjet head,
In the ink applied to the stepped substrate, the dot resolution in the direction of relative movement is higher than the dot resolution in the direction perpendicular to the direction of relative movement.
The method for forming a film according to any one of <1> to <6>.
<8> The wind is an inert gas stream,
the ink is an active energy ray-curable ink containing a polymerizable compound;
The method for forming a film according to any one of <1> to <7>.
<9> The stepped substrate includes a base substrate and components arranged on the base substrate, and a gap exists between the base substrate and the components.
The method for forming a film according to any one of <1> to <8>.
<10> Furthermore, before the film forming step, a partition wall forming step of forming partition walls surrounding the region where the film is formed by ejecting ink from an inkjet head,
The method for forming a film according to any one of <1> to <9>.
<11> Furthermore, before the film forming step, at least the region where the film is to be formed is subjected to a hydrophilic treatment,
The method for forming a film according to any one of <1> to <10>.
<12> A step of preparing an electronic substrate including a wiring substrate and electronic components arranged on the wiring substrate;
forming at least one of an insulating layer and a conductive layer on an electronic substrate to obtain an electronic device;
including
At least one of the insulating layer and the conductive layer is formed by the film forming method according to any one of <1> to <11>,
A method of manufacturing an electronic device.
<13> An inkjet head that applies ink to at least the top surface of the step in the stepped substrate, which is a substrate having a step in the thickness direction of the substrate;
A wind blower for blowing air against the ink applied on the top surface of the step;
with
The stepped substrate and the inkjet head move relative to each other,
A film forming apparatus, wherein an inkjet head and an air blower are arranged in a direction of relative movement.
<14> Furthermore, a wind collector for collecting wind is provided,
The film forming apparatus according to <13>.
<15> The component contains a component in which the direction of the wind blown from the wind blower is opposite to the side on which the inkjet head is arranged as viewed from the wind blower,
The film forming apparatus according to <13> or <14>.
<16> Equipped with two wind blowers,
An inkjet head is arranged between the two air blowers,
the relative movement is reciprocating movement,
The film forming apparatus according to any one of <13> to <15>.
<17> The wind blower has an on/off function for switching between an on state for blowing air and an off state for stopping the blowing of air.
The film forming apparatus according to any one of <13> to <16>.
<18> Further, it comprises a pinning exposure machine that performs pinning exposure on the ink blown by the wind.
The film forming apparatus according to any one of <13> to <17>.
<19> Further, a pinning exposure machine is provided for performing pinning exposure on the ink applied on the top surface of the step and before the wind is blown,
The film forming apparatus according to any one of <13> to <18>.

 本開示の一態様によれば、基板厚さ方向の段差を有する基板である段差付き基板に対し、少なくとも段差の天面及び段差の側面を被覆する膜をインクジェット法によって膜を形
成するにあたり、段差の天面上から段差の側面上にかけての膜の厚さバラつきを抑制できる、膜の形成方法及び膜形成装置が提供される。
 本開示の別の一態様によれば、配線基板と配線基板上に配置されている電子部品とを備える電子基板上の少なくとも電子部品の天面及び電子部品の側面を含む領域に、インクジェット法によって絶縁層及び/又は導電層を形成して電子デバイスを形成するにあたり、電子部品の天面上から電子部品の側面上にかけての絶縁層及び/又は導電層の厚さバラつきを抑制できる電子デバイスの製造方法が提供される。
According to one aspect of the present disclosure, in forming a film that covers at least the top surface of the step and the side surface of the step on a stepped substrate, which is a substrate having a step in the thickness direction of the substrate, by an inkjet method, the step is Provided are a film forming method and a film forming apparatus capable of suppressing variations in film thickness from the top surface of the step to the side surface of the step.
According to another aspect of the present disclosure, a region including at least the top surface of the electronic component and the side surface of the electronic component on the electronic substrate including the wiring board and the electronic component arranged on the wiring board is coated by an inkjet method. Manufacture of an electronic device capable of suppressing variations in the thickness of the insulating layer and/or conductive layer from the top surface of the electronic component to the side surface of the electronic component when the insulating layer and/or conductive layer are formed to form the electronic device. A method is provided.

本開示の一実施形態に係る膜の形成方法を概念的に示す工程フロー図である。1 is a process flow chart conceptually showing a method of forming a film according to an embodiment of the present disclosure; FIG. 本開示の一実施形態に係る膜の形成方法を概念的に示す工程フロー図である。1 is a process flow chart conceptually showing a method of forming a film according to an embodiment of the present disclosure; FIG. 本開示の一実施形態に係る膜の形成方法を概念的に示す工程フロー図である。1 is a process flow chart conceptually showing a method of forming a film according to an embodiment of the present disclosure; FIG. 本開示の一実施形態に係る膜の形成方法を概念的に示す工程フロー図である。1 is a process flow chart conceptually showing a method of forming a film according to an embodiment of the present disclosure; FIG. ベース基板と部材との間に、隙間が存在している態様の段差付き基板の例を示す概略側面図である。FIG. 4 is a schematic side view showing an example of a stepped substrate in which a gap exists between the base substrate and the member; 本開示において、相対移動の方向のドット解像度が、相対移動の方向に対して直交する方向のドット解像度よりも高い態様の一例を概念的に示す概略平面図である。4 is a schematic plan view conceptually showing an example of a mode in which the dot resolution in the direction of relative movement is higher than the dot resolution in the direction orthogonal to the direction of relative movement in the present disclosure; FIG. 本開示において、部材の角部にインクが着弾する様子の一例を概念的に示す概略側面図である。FIG. 4 is a schematic side view conceptually showing an example of how ink lands on a corner of a member in the present disclosure. 本開示における仰角の一例を示す概念図である。FIG. 4 is a conceptual diagram showing an example of elevation angles in the present disclosure; 本開示の膜の形成方法が隔壁形成工程を含む場合の隔壁形成工程後であって膜形成工程前の一例を示す概略側面図である。FIG. 4 is a schematic side view showing an example after the partition forming step and before the film forming step in the case where the film forming method of the present disclosure includes the partition forming step. 本開示の膜形成装置の一例を示す概略平面図である。1 is a schematic plan view showing an example of a film forming apparatus of the present disclosure; FIG. 図7Aの側面図である。7B is a side view of FIG. 7A; FIG. 図7Bに示す膜形成装置に対する変形例を示す概略断面図である。7B is a schematic cross-sectional view showing a modification of the film forming apparatus shown in FIG. 7B; FIG. 本開示の膜形成装置の別の一例を示す概略平面図である。FIG. 4 is a schematic plan view showing another example of the film forming apparatus of the present disclosure; 図8Aの側面図である。8B is a side view of FIG. 8A; FIG. 本開示の膜形成装置の更に別の一例を示す概略平面図である。FIG. 4 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure; 図9Aの側面図である。Figure 9B is a side view of Figure 9A; 本開示の膜形成装置の更に別の一例を示す概略平面図である。FIG. 4 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure; 図10Aの側面図である。10B is a side view of FIG. 10A; FIG. 本開示の膜形成装置の更に別の一例を示す概略平面図である。FIG. 4 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure; 本開示の膜形成装置の更に別の一例を示す概略平面図である。FIG. 4 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure; 風吹出機を2つ備える態様の本開示の膜形成装置の一例を示す概略平面図である。1 is a schematic plan view showing an example of a film forming apparatus of the present disclosure in which two air blowers are provided; FIG. 図13Aの側面図である。13B is a side view of FIG. 13A; FIG. 図13Bに対し、段差付き基板の搬送向きを逆向きにした場合の側面図である。FIG. 13B is a side view of the case where the conveying direction of the stepped substrate is reversed with respect to FIG. 13B. 風吹出機を2つ備える態様の本開示の膜形成装置の一例を示す概略平面図である。1 is a schematic plan view showing an example of a film forming apparatus of the present disclosure in which two air blowers are provided; FIG. 図14Aの側面図である。14B is a side view of FIG. 14A; FIG. 図14Bに対し、段差付き基板の搬送向きを逆向きにした場合の側面図である。FIG. 14B is a side view of a case in which the conveying direction of the stepped substrate is reversed with respect to FIG. 14B; 本開示の実施形態に係る電子デバイスの製造方法において、準備工程で準備する電子基板の概略平面図である。FIG. 4 is a schematic plan view of an electronic substrate prepared in a preparation step in the method of manufacturing an electronic device according to the embodiment of the present disclosure; 図15AのX-X線断面図である。FIG. 15B is a cross-sectional view taken along the line XX of FIG. 15A; 本開示の実施形態に係る電子デバイスの製造方法において、第1工程で絶縁性保護層が形成された電子基板の概略平面図である。1 is a schematic plan view of an electronic substrate on which an insulating protective layer is formed in a first step in a method of manufacturing an electronic device according to an embodiment of the present disclosure; FIG. 図16AのX-X線断面図である。FIG. 16B is a cross-sectional view taken along line XX of FIG. 16A; 本開示の実施形態に係る電子デバイスの製造方法において、第2工程で電磁波シールド層が形成された電子基板(即ち、本開示の実施形態に係る電子デバイス)の概略平面図である。FIG. 4 is a schematic plan view of an electronic substrate (that is, an electronic device according to an embodiment of the present disclosure) on which an electromagnetic wave shield layer is formed in a second step in a method for manufacturing an electronic device according to an embodiment of the present disclosure; 図17AのX-X線断面図である。FIG. 17B is a cross-sectional view taken along the line XX of FIG. 17A;

 本開示において、「~」を用いて示された数値範囲は、「~」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を意味する。
 本開示に段階的に記載されている数値範囲において、ある数値範囲で記載された上限値又は下限値は、他の段階的な記載の数値範囲の上限値又は下限値に置き換えてもよい。また、本開示に記載されている数値範囲において、ある数値範囲で記載された上限値又は下限値は、実施例に示されている値に置き換えてもよい。
In the present disclosure, a numerical range indicated using "to" means a range including the numerical values before and after "to" as the minimum and maximum values, respectively.
In the numerical ranges described step by step in the present disclosure, upper or lower limits described in a certain numerical range may be replaced with upper or lower limits of other numerical ranges described step by step. In addition, in the numerical ranges described in the present disclosure, upper or lower limits described in a certain numerical range may be replaced with values shown in Examples.

 本開示において、組成物中の各成分の量は、組成物中に各成分に該当する物質が複数存在する場合には、特に断らない限り、組成物中に存在する複数の物質の合計量を意味する。
 本開示において、2以上の好ましい態様の組み合わせは、より好ましい態様である。
 本開示において、「工程」という語は、独立した工程だけでなく、他の工程と明確に区別できない場合であっても、その工程の所期の目的が達成されれば、本用語に含まれる。
In the present disclosure, when there are multiple substances corresponding to each component in the composition, the amount of each component in the composition is the total amount of the multiple substances present in the composition unless otherwise specified. means.
In the present disclosure, a combination of two or more preferred aspects is a more preferred aspect.
In the present disclosure, the term "process" includes not only an independent process, but also if the intended purpose of the process is achieved, even if it cannot be clearly distinguished from other processes. .

〔膜の形成方法〕
 本開示の膜の形成方法は、
 基板厚さ方向の段差を有する基板である段差付き基板を準備する工程(以下、「段差付き基板準備工程」ともいう)と、
 段差付き基板における少なくとも段差の天面上に、インクジェットヘッドからインクを吐出することによりインクを付与し、段差の天面上に着弾したインクに対して風を吹き付けることにより、少なくとも段差の天面及び段差の側面を被覆する膜を形成する膜形成工程と、
を含む。
 本開示の膜の形成方法は、必要に応じ、その他の工程を含んでいてもよい。
[Method of Forming Film]
The method of forming the membrane of the present disclosure comprises:
a step of preparing a stepped substrate that is a substrate having a step in the thickness direction of the substrate (hereinafter also referred to as a “stepped substrate preparation step”);
Ink is applied to at least the top surface of the stepped substrate by ejecting ink from an inkjet head, and by blowing air against the ink that has landed on the top surface of the stepped surface, at least the top surface of the stepped portion and the top surface of the stepped portion. a film forming step of forming a film covering the side surface of the step;
including.
The film formation method of the present disclosure may include other steps as necessary.

 本開示の膜の形成方法によれば、段差付き基板に対し、少なくとも段差の天面及び段差の側面を被覆する膜をインクジェット法によって膜を形成するにあたり、段差の天面上から段差の側面上にかけての膜の厚さバラつきを抑制できる。
 かかる効果が得られる理由は、段差の天面上に着弾したインクに対して吹き付ける風により、天面上のインクの一部を側面に回り込ませることができ、これにより、段差の側面上の膜の厚さ、及び/又は、段差の側面と天面とのつなぎ目に位置する角部上の膜の厚さが薄くなる現象を抑制できるためと考えられる。
According to the film forming method of the present disclosure, when forming a film covering at least the top surface of the step and the side surface of the step on the stepped substrate by the inkjet method, the top surface of the step and the side surface of the step are formed. It is possible to suppress variations in the thickness of the film over time.
The reason why such an effect can be obtained is that the air blowing against the ink that has landed on the top surface of the step can cause a part of the ink on the top surface to flow around the side surface, and as a result, the film on the side surface of the step and/or the thickness of the film on the corner located at the joint between the side surface and the top surface of the step can be suppressed.

 本開示の膜の形成方法を実施するための装置については特に限定はない。
 本開示の膜の形成方法は、例えば、後述する本開示の膜形成装置によって実施することができる。
There is no particular limitation on the apparatus for carrying out the film formation method of the present disclosure.
The film forming method of the present disclosure can be implemented, for example, by a film forming apparatus of the present disclosure, which will be described later.

<膜の形成方法の一実施形態>
 以下、本開示の膜の形成方法の一実施形態について、図面を参照しながら説明する。
 但し、本開示の膜の形成方法は、以下の実施形態には限定されない。
 以下の説明において、実質的に同一の要素(例えば部品又は部分)については、同一の
符号を付し、重複した説明を省略する場合がある。
<One Embodiment of Film Forming Method>
An embodiment of the film forming method of the present disclosure will be described below with reference to the drawings.
However, the film forming method of the present disclosure is not limited to the following embodiments.
In the following description, substantially the same elements (for example, parts or portions) may be denoted by the same reference numerals, and redundant description may be omitted.

 図1A~図1Dは、本開示の一実施形態に係る膜の形成方法を概念的に示す工程フロー図である。
 本実施形態に係る膜の形成方法は、図1Aに示される段差付き基板10を準備する。
 段差付き基板10は、平板状のベース基板12と、ベース基板12上に設けられた部材18と、を含む。
 本実施形態において、ベース基板12上の部材18の端部が本開示でいう「段差」に対応し、部材18の端部の側面18Sが、本開示における段差の側面に対応し、部材18の天面18Uが本開示における段差の天面に対応する。
1A-1D are process flow diagrams conceptually illustrating a method of forming a film according to an embodiment of the present disclosure.
In the method of forming a film according to this embodiment, a stepped substrate 10 shown in FIG. 1A is prepared.
The stepped substrate 10 includes a flat base substrate 12 and members 18 provided on the base substrate 12 .
In this embodiment, the end of the member 18 on the base substrate 12 corresponds to the “step” in the present disclosure, the side surface 18S of the end of the member 18 corresponds to the side of the step in the present disclosure, and the The top surface 18U corresponds to the top surface of the step in the present disclosure.

 図1A及び図1Bに示されるように、本実施形態では、インクジェットヘッド24を固定し、段差付き基板10を搬送向きM1の向きに搬送しながら(即ち、移動させながら)、インクジェットヘッド24からインク26を吐出する。これにより、部材18の天面上を含む領域にインク26を付与する。
 この実施形態における膜形成工程では、インクジェットヘッドを固定し段差付き基板を移動させているが、段差付き基板を固定しインクジェットヘッドを移動させてもよいし、インクジェットヘッド及び段差付き基板を両方移動させてもよい。
 この実施形態における膜形成工程では、インクを、部材18の天面上と、天面上よりも外側の領域(部材18の側面上及びベース基板12上)と、に跨る領域に付与しているが、インクは、少なくとも部材18の天面上に付与すればよく、部材18の天面上にのみ付与してもよい。
As shown in FIGS. 1A and 1B, in this embodiment, the inkjet head 24 is fixed, and ink is ejected from the inkjet head 24 while transporting (that is, moving) the stepped substrate 10 in the transport direction M1. 26 is discharged. As a result, the ink 26 is applied to the area including the top surface of the member 18 .
In the film forming process in this embodiment, the inkjet head is fixed and the stepped substrate is moved, but the stepped substrate may be fixed and the inkjet head may be moved, or both the inkjet head and the stepped substrate may be moved. may
In the film forming process in this embodiment, the ink is applied to the area extending over the top surface of the member 18 and the area outside the top surface (on the side surface of the member 18 and on the base substrate 12). However, the ink may be applied at least on the top surface of the member 18 and may be applied only on the top surface of the member 18 .

 図1Bに示されるように、この実施形態では、インク26の付与後、部材18の側面18S上のインク26の厚さ、及び、側面18Sと天面18Uとのつなぎ目に位置する角部18C上のインク26の厚さが、いずれも、天面18U上の膜の厚さと比較して薄くなっている。
 これにより、部材18の側面18S上から天面18U上にかけての膜の厚さバラつきが大きくなっている。
 本開示の膜の形成方法の課題は、この厚さバラつきを抑制することである。
As shown in FIG. 1B, in this embodiment, after applying the ink 26, the thickness of the ink 26 on the side surface 18S of the member 18 and the thickness of the ink 26 on the corner 18C located at the joint between the side surface 18S and the top surface 18U The thickness of the ink 26 on the top surface 18U is thinner than the thickness of the film on the top surface 18U.
As a result, variations in the thickness of the film from the side surface 18S to the top surface 18U of the member 18 are increased.
The problem of the film forming method of the present disclosure is to suppress this thickness variation.

 図1Cに示されるように、この実施形態では、インク26の付与後、天面18U上のインク26に風W1を吹き付ける。この風W1の力により、天面18Uの中央部上のインク26の一部が、天面18Uの周端部上に移動し、更に、角部18C上及び側面18S上に移動する。
 その結果、図1Dに示されるように、角部18C上及び側面18S上のインクの厚さが薄くなる現象が抑制され、側面18S上から天面18U上にかけての膜の厚さバラつきが抑制される。
As shown in FIG. 1C, in this embodiment, after applying the ink 26, a wind W1 is blown to the ink 26 on the top surface 18U. A portion of the ink 26 on the central portion of the top surface 18U moves onto the peripheral edge portion of the top surface 18U and further moves onto the corner portions 18C and the side surfaces 18S due to the force of the wind W1.
As a result, as shown in FIG. 1D, the phenomenon that the thickness of the ink on the corner 18C and the side surface 18S becomes thin is suppressed, and the variation in the thickness of the film from the side surface 18S to the top surface 18U is suppressed. be.

 次に、本開示の膜の形成方法における各工程について説明する。 Next, each step in the film formation method of the present disclosure will be described.

<段差付き基板準備工程>
 本開示の膜の形成方法は、段差付き基板準備工程を含む。
 段差付き基板は、基板厚さ方向の段差を有する基板である。
 段差付き基板準備工程では、予め製造された段差付き基板を単に準備するだけの工程であってもよいし、段差付き基板を製造する工程であってもよい。
<Stepped substrate preparation process>
The film formation method of the present disclosure includes a stepped substrate preparation step.
A stepped substrate is a substrate having a step in the thickness direction of the substrate.
The stepped substrate preparation step may be a step of simply preparing a previously manufactured stepped substrate, or may be a step of manufacturing a stepped substrate.

 段差付き基板の一例は、上述した、ベース基板12とベース基板12上に配置された部材18とを含む段差付き基板10である。
 部材18は、ベース基板12(例えば、配線基板)に対して取り付けられた部品(例え
ば、電子部品)であってもよいし、ベース基板12上に形成されたパターン膜(例えば、金属パターン膜、絶縁膜、レジストパターン膜、等)であってもよい。
An example of the stepped substrate is the stepped substrate 10 including the base substrate 12 and the member 18 arranged on the base substrate 12 described above.
The member 18 may be a component (e.g., electronic component) attached to the base substrate 12 (e.g., wiring board), or a pattern film (e.g., metal pattern film, insulating film, resist pattern film, etc.).

 段差付き基板10として、配線基板と、配線基板上に配置された電子部品と、を含む電子基板が挙げられる。
 配線基板としては、配線が形成された基板、例えば、プリント配線基板を用いることができる。
 電子部品としては、例えば、集積回路(IC;Integrated Circuit)等の半導体チップ、コンデンサ、トランジスタ等が挙げられる。
 配線基板は、グランド電極、グランド配線、ソルダーレジスト層等を含んでいてもよい。
The stepped substrate 10 may be an electronic substrate including a wiring substrate and electronic components arranged on the wiring substrate.
As the wiring board, a board on which wiring is formed, for example, a printed wiring board can be used.
Examples of electronic components include semiconductor chips such as integrated circuits (ICs), capacitors, and transistors.
The wiring board may include a ground electrode, ground wiring, a solder resist layer, and the like.

 段差付き基板は、ベース基板に対し部材が取り付けられてなる段差付き基板には限定されず、ベース基板に対し、エッチング等の加工により、段差(例えば、凸部、凹部(注:底がある穴を含む)、貫通孔等)が形成されてなるものであってもよい。 The substrate with a step is not limited to a substrate with a step formed by attaching a member to the base substrate. including), through holes, etc.) may be formed.

 段差付き基板におけるベース基板の材質としては特に制限はないが、例えば、ガラス、セラミックス、金属、樹脂、等が挙げられる。 The material of the base substrate in the stepped substrate is not particularly limited, but examples include glass, ceramics, metal, resin, and the like.

 段差付き基板は、ベース基板と、ベース基板上に配置されている部材と、を含み、ベース基板と部材との間に、隙間が存在してもよい。
 風の吹き付けを行わない従来の膜の形成方法において、ベース基板と部材との間に隙間が存在している場合には、部材を含む領域にインクを付与した場合、ベース基板と部材との間に隙間にインクが入り込むため、部材の側面のインクの厚さがより薄くなる傾向がある。
 しかし、本開示の膜の形成方法では、部材の天面上のインクに対して風を吹き付けることにより、天面上のインクを側面上に回り込ませることができる。
 このようにして、ベース基板と部材との間に隙間が存在する場合には、段差の天面上のインクに対して風を吹き付けることによる本開示の効果がより発揮されやすい。
The stepped substrate includes a base substrate and a member arranged on the base substrate, and a gap may exist between the base substrate and the member.
In the conventional film formation method without air blowing, if there is a gap between the base substrate and the member, when the ink is applied to the region including the member, the gap between the base substrate and the member The thickness of the ink on the side surface of the member tends to be thinner because the ink enters the gap between the members.
However, in the method of forming a film according to the present disclosure, by blowing air against the ink on the top surface of the member, the ink on the top surface can be made to flow onto the side surface.
Thus, when there is a gap between the base substrate and the member, the effect of the present disclosure is more likely to be exhibited by blowing air against the ink on the top surface of the step.

 図2は、ベース基板と部材との間に、隙間が存在している態様の段差付き基板の例を示す概略側面図である。
 図2に示す一例に係る段差付き基板13の構造は、前述の段差付き基板10において、ベース基板12と部材18との間に、複数の接続部材16が追加されることにより、ベース基板12と部材18との間に隙間17が設けられた構造である。
 接続部材16としては、ベース基板12と部材18とを接続するための接続材(例えば、半田ボール、接着剤、等)、等が挙げられる。
FIG. 2 is a schematic side view showing an example of a stepped substrate in which a gap exists between the base substrate and the member.
The structure of the stepped substrate 13 according to the example shown in FIG. It is a structure in which a gap 17 is provided between it and the member 18 .
The connection member 16 includes a connection material (for example, a solder ball, an adhesive, etc.) for connecting the base substrate 12 and the member 18, and the like.

<膜形成工程>
 本開示の膜の形成方法は、膜形成工程を含む。
 膜形成工程は、段差付き基板における少なくとも段差の天面上に、インクジェットヘッドからインクを吐出することによりインクを付与し、段差の天面上に着弾したインクに対して風を吹き付けることにより、少なくとも段差の天面及び段差の側面を被覆する膜を形成する工程である。
<Film forming process>
A method of forming a film of the present disclosure includes a film forming step.
In the film forming step, ink is applied to at least the top surface of the stepped substrate by ejecting ink from an inkjet head, and by blowing air against the ink that has landed on the top surface of the stepped surface, at least This is a step of forming a film covering the top surface of the step and the side surface of the step.

(インクの付与)
 インクについては特に限定はないが、例えば、後述の電子デバイスの製造方法の項で説明する導電インク及び絶縁インクが挙げられる。
(Applying ink)
The ink is not particularly limited, but examples thereof include conductive inks and insulating inks described later in the section of the electronic device manufacturing method.

 インクの付与方法としては、インクジェット記録における公知の方法を適宜適用できる
 インクジェットヘッドからインクを吐出する方式としては、静電誘引力を利用してインクを吐出させる電荷制御方式、ピエゾ素子の振動圧力を利用するドロップオンデマンド方式(圧力パルス方式)、電気信号を音響ビームに変えインクに照射して放射圧を利用してインクを吐出させる音響インクジェット方式、及びインクを加熱して気泡を形成し、生じた圧力を利用するサーマルインクジェット(バブルジェット(登録商標))方式のいずれであってもよい。
 インクジェットヘッドからインクを吐出する方式としては、特に、特開昭54-59936号公報に記載の方法で、熱エネルギーの作用を受けたインクが急激な体積変化を生じ、この状態変化による作用力によって、インクをノズルから吐出させるインクジェット記録方式を有効に利用することができる。
 また、インクジェットヘッドからインクを吐出する方式については、特開2003-306623号公報の段落0093~0105に記載の方法も参照できる。
As a method for applying ink, a known method in inkjet recording can be appropriately applied. As a method for ejecting ink from an inkjet head, a charge control method that ejects ink using electrostatic attraction, and a vibration pressure of a piezoelectric element can be used. The drop-on-demand method (pressure pulse method) used, the acoustic inkjet method that converts an electrical signal into an acoustic beam and irradiates it on the ink and uses radiation pressure to eject the ink, and the ink that is heated to form bubbles and generate Any thermal ink jet (bubble jet (registered trademark)) system that utilizes pressure may be used.
As a method for ejecting ink from an inkjet head, in particular, the method described in Japanese Patent Laid-Open No. 59936/1989, the volume of the ink undergoes abrupt changes due to the action of thermal energy. , an ink jet recording method in which ink is ejected from nozzles can be effectively used.
As for the method of ejecting ink from an inkjet head, the method described in paragraphs 0093 to 0105 of JP-A-2003-306623 can also be referred to.

 膜形成工程におけるインクの付与は、段差付き基板とインクジェットヘッドとを相対移動させながら行うことが好ましい。これにより、段差付き基板上の所望とする領域にインクを効率よく付与できる。
 この場合、インクジェットヘッドを固定し段差付き基板を移動させてもよいし、段差付き基板を固定しインクジェットヘッドを移動させてもよいし、インクジェットヘッド及び段差付き基板を両方移動させてもよい。
It is preferable to apply the ink in the film forming step while relatively moving the stepped substrate and the inkjet head. As a result, the ink can be efficiently applied to a desired area on the stepped substrate.
In this case, the inkjet head may be fixed and the stepped substrate may be moved, the stepped substrate may be fixed and the inkjet head may be moved, or both the inkjet head and the stepped substrate may be moved.

 膜形成工程におけるインクの付与を、段差付き基板とインクジェットヘッドとを相対移動させながら行う場合、段差付き基板に付与されたインクにおいて、相対移動の方向のドット解像度が、相対移動の方向に対して直交する方向のドット解像度よりも高いことが好ましい。
 これにより、相対移動の方向に対して交差(例えば直交)する方向の段差の角部にインクが着弾しやすくなり、その結果、上記交差する方向の段差の側面に付着するインクの付着量を確保しやすくなる。その結果、段差の側面上のインクの厚さが確保されるので、段差の側面上から天面上にかけての膜の厚さバラつきがより抑制される。
When the ink is applied in the film forming process while the stepped substrate and the inkjet head are relatively moved, the dot resolution in the direction of the relative movement in the ink applied to the stepped substrate is different from the direction of the relative movement. It is preferably higher than the dot resolution in the orthogonal direction.
This makes it easier for the ink to land on the corners of the steps in the direction that intersects (for example, perpendicularly) the direction of relative movement, and as a result, secures the amount of ink adhering to the side surfaces of the steps in the intersecting direction. easier to do. As a result, since the thickness of the ink on the side surface of the step is ensured, variations in the thickness of the film from the side surface to the top surface of the step are further suppressed.

 図3は、相対移動の方向のドット解像度が、相対移動の方向に対して直交する方向のドット解像度よりも高い態様の一例を概念的に示す概略平面図である。
 図4は、部材の角部にインクが着弾する様子の一例を概念的に示す概略側面図である。
FIG. 3 is a schematic plan view conceptually showing an example of a mode in which the dot resolution in the direction of relative movement is higher than the dot resolution in the direction orthogonal to the direction of relative movement.
FIG. 4 is a schematic side view conceptually showing an example of how ink lands on a corner of a member.

 図3に示す一例では、段差付き基板10が搬送向きM1の向きに移動し、かつ、段差付き基板10における部材18及びその周囲の全体にわたり、多数のインクドットD1が形成される。この一例では、搬送向きM1に対して平行な方向(即ち、相対移動の方向)のインクドットD1の密度(即ち、ドット解像度)が、相対移動の方向に対して直交する方向のインクドットD1の密度(即ち、ドット解像度)よりも高くなっている。より具体的には、この図3では、相対移動の方向のドット解像度が、相対移動の方向に対して直交する方向のドット解像度の約2倍である状態を図示している。 In the example shown in FIG. 3, the stepped substrate 10 is moved in the transport direction M1, and a large number of ink dots D1 are formed over the member 18 and its surroundings on the stepped substrate 10 . In this example, the density (ie, dot resolution) of the ink dots D1 in the direction parallel to the transport direction M1 (ie, the direction of relative movement) is the same as the density of the ink dots D1 in the direction perpendicular to the direction of relative movement. higher than the density (ie dot resolution). More specifically, FIG. 3 illustrates a state in which the dot resolution in the direction of relative movement is about twice the dot resolution in the direction orthogonal to the direction of relative movement.

 相対移動の方向のドット解像度が、相対移動の方向に対して直交する方向のドット解像度よりも高い場合、図4に示すように、インク26(インク滴)が、部材18の角部18Cに着弾しやすくなる。その結果、角部18Cの下の側面18Sに付着するインクの付着量を確保することができ、その結果、段差の側面18S上のインク26の厚さが確保されるので、段差の側面18S上から天面18U上にかけての膜の厚さバラつきがより抑制される。 When the dot resolution in the direction of relative movement is higher than the dot resolution in the direction orthogonal to the direction of relative movement, as shown in FIG. easier to do. As a result, it is possible to ensure the amount of ink adhering to the side surface 18S below the corner 18C. to the top surface 18U is further suppressed.

(風の吹き付け)
 膜形成工程では、段差の天面上に着弾したインクに対して風を吹き付けることにより、
少なくとも段差の天面及び段差の側面を被覆する膜を形成する。
 詳細には、前述したとおり、この風の力により、天面上に着弾したインクの一部が、角部上及び側面上に移動し、その結果、角部及び側面におけるインクの厚さが薄くなる現象が抑制される。
(Blowing wind)
In the film forming process, by blowing air against the ink that has landed on the top surface of the step,
A film covering at least the top surface of the step and the side surface of the step is formed.
Specifically, as described above, due to the force of this wind, part of the ink that has landed on the top surface moves onto the corners and sides, and as a result, the thickness of the ink on the corners and sides becomes thin. phenomenon is suppressed.

 膜形成工程が、段差付き基板上の段差の天面上に着弾したインクに対し、風を吹き付けることを含む場合、風の風速には特に限定はない。
 上記効果をより効果的に発揮させる観点から、風の風速は、1m/s~30m/sであることが好ましく、1m/s以上30m/s未満であることがより好ましく、1m/s~25m/sであることが更に好ましく、2m/s~20m/sであることが更に好ましく、5m/s~15m/sであることが更に好ましい。
When the film forming step includes blowing air against the ink that has landed on the top surface of the steps on the substrate with steps, the speed of the wind is not particularly limited.
From the viewpoint of exerting the above effects more effectively, the wind speed of the wind is preferably 1 m / s to 30 m / s, more preferably 1 m / s or more and less than 30 m / s, and 1 m / s to 25 m / s. /s, more preferably 2 m/s to 20 m/s, even more preferably 5 m/s to 15 m/s.

 膜形成工程が、段差付き基板上の段差の天面上に着弾したインクに対し、風を吹き付けることを含む場合、段差の天面上に着弾したインクに対して風を吹き付ける方向には特に限定はない。
 上記効果をより効果的に発揮させる観点から、段差の天面上に着弾したインクに対して風を吹き付ける方向は、仰角が10°~90°となる方向が好ましく、仰角が20°~90°となる方向がより好ましく、仰角が30°~90°となる方向が更に好ましい。
When the film forming step includes blowing air against the ink that has landed on the top surface of the steps on the substrate with steps, the direction in which the air blows against the ink that has landed on the top surface of the steps is particularly limited. no.
From the viewpoint of exhibiting the above effect more effectively, the direction in which the wind blows against the ink that has landed on the top surface of the step is preferably a direction in which the elevation angle is 10° to 90°, and the elevation angle is 20° to 90°. is more preferable, and a direction in which the elevation angle is 30° to 90° is even more preferable.

 本開示において、「段差の天面上に着弾したインクに対して風Bを吹き付ける方向は仰角がX°となる方向である。」とは、風Bが吹き付けられる位置において風Bが来る方向を見上げた場合の水平面からの角度がX°(ここで、X°は、0°以上90°以下の範囲の角度である)であることを意味する。
 図5は、仰角の一例を示す概念図である。
 この一例における仰角は、符号W1で表される風が吹き付けられる位置P1で、風が来る方向を見上げた場合の水平面からの角度X°である。
In the present disclosure, "the direction in which the wind B is blown against the ink that has landed on the top surface of the step is the direction in which the elevation angle is X degrees." It means that the angle from the horizontal plane when looking up is X° (here, X° is an angle in the range of 0° to 90°).
FIG. 5 is a conceptual diagram showing an example of elevation angles.
The elevation angle in this example is the angle X° from the horizontal plane when looking up at the position P1 where the wind blows represented by symbol W1 and the direction from which the wind comes.

 また、風は、風吹出機から吹き出された風であることが好ましい。
 風吹出機としては、例えば、ドライヤー、熱風発生器、圧縮空気発生器、ファン、ブロア、等を用いることができる。また、風吹出機としては、工場内に圧縮空気を流通させている配管を膜形成装置内に引き込んで利用してもよい。
Moreover, it is preferable that the wind is the wind blown from the wind blower.
As the air blower, for example, a dryer, hot air generator, compressed air generator, fan, blower, etc. can be used. Further, as the air blower, a pipe for circulating compressed air in the factory may be drawn into the film forming apparatus and used.

 風吹出機から吹き出される風の向きは、風吹出機から見てインクジェットヘッドが配置されている側とは反対向きの成分を含むことが好ましい(例えば、後述の図7B参照)。これにより、インクジェットヘッドの方向に風が向かわないので、風の影響によるインクの吐出精度の低下をより抑制できる。 The direction of the air blown from the air blower preferably includes a component in the direction opposite to the side on which the inkjet head is arranged as viewed from the air blower (for example, see FIG. 7B described later). As a result, since the wind does not blow in the direction of the inkjet head, it is possible to further suppress the deterioration of the ink ejection accuracy due to the influence of the wind.

 本開示の膜形成方法において、風は、特に限定されず、任意のガスの気流を用いることができる。
 本開示の膜形成方法において、インクが、重合性化合物を含有する活性エネルギー線硬化型インクである場合、風は、不活性ガスの気流であることが好ましい。これにより、酸素による重合阻害(詳細には、活性エネルギー線硬化型インクにおける重合性化合物の重合が、酸素によって阻害される現象)を抑制できるので、活性エネルギー線硬化型インクの硬化性により優れる。
 不活性ガスとしては、窒素ガス、アルゴンガス、ヘリウムガス等が挙げられる。
In the film forming method of the present disclosure, the wind is not particularly limited, and any gas stream can be used.
In the film forming method of the present disclosure, when the ink is an active energy ray-curable ink containing a polymerizable compound, the wind is preferably an inert gas stream. As a result, inhibition of polymerization by oxygen (specifically, a phenomenon in which oxygen inhibits the polymerization of a polymerizable compound in the active energy ray-curable ink) can be suppressed, so that the curability of the active energy ray-curable ink is excellent.
Examples of inert gas include nitrogen gas, argon gas, helium gas, and the like.

 また、膜形成工程は、インクに対して吹き付けられた風を回収することを含むことが好ましい。
 これにより、膜形成工程が行われる装置(例えば、インクジェット記録装置)内の圧力上昇をより抑制できる。また、インクジェットヘッドから噴出され、基板に付着しなかっ
たサテライト滴及び/又はミスト滴を回収することができる。
 風の回収は、例えば、ファンと膜形成装置外につながる配管とを組み合わせた風回収機、排気装置、等を用いて行うことができる。
 例えば、上記風回収機において、ファンの手前に交換可能なフィルタを配置し、定期的に交換することで、サテライト滴及び/又はミスト滴が工場内に拡散することを防止することができる。
Moreover, it is preferable that the film forming step includes recovering the air blown against the ink.
As a result, it is possible to further suppress the pressure increase in the device (for example, the inkjet recording device) in which the film forming process is performed. Also, satellite droplets and/or mist droplets ejected from the inkjet head and not adhered to the substrate can be recovered.
The wind can be collected, for example, by using a wind collector, an exhaust device, or the like, which is a combination of a fan and a pipe connected to the outside of the film forming apparatus.
For example, in the wind collector, a replaceable filter is placed in front of the fan and replaced periodically to prevent satellite droplets and/or mist droplets from diffusing into the factory.

(ピニング露光)
 膜形成工程は、更に、風が吹き付けられたインクに対し、ピニング露光(以下、「ピニング露光A」ともいう)を施すことを含んでもよい。
 ピニング露光Aの積算露光量は特に限定されないが、例えば0.1J/cm~1000J/cmである。
 このピニング露光Aによってインクの流動性を抑制できるので、段差の側面に付着したインクが重力によって流れ落ちることを抑制できる。従って、段差の側面上から天面上にかけての膜の厚さバラつきをより抑制できる。
 ピニング露光Aの積算露光量は特に限定されないが、例えば0.1J/cm~1000J/cmである。
 膜形成工程におけるインクが後述する導電層形成用インクである場合、この導電層形成用インクに対するピニング露光Aの積算露光量は、0.1J/cm~1000J/cmであることが好ましく、1J/cm~100J/cmであることがより好ましい。
 膜形成工程におけるインクが後述する絶縁層形成用インクである場合、この絶縁層形成用インクに対するピニング露光Aの積算露光量は、0.1J/cm~100J/cmであることが好ましく、0.1J/cm~10J/cmであることがより好ましい。
(pinning exposure)
The film forming step may further include subjecting the ink blown by the wind to pinning exposure (hereinafter also referred to as “pinning exposure A”).
Although the integrated exposure amount of the pinning exposure A is not particularly limited, it is, for example, 0.1 J/cm 2 to 1000 J/cm 2 .
Since the fluidity of the ink can be suppressed by this pinning exposure A, it is possible to suppress the ink adhering to the side surface of the step from flowing down due to gravity. Therefore, variations in the thickness of the film from the side surface to the top surface of the step can be further suppressed.
Although the integrated exposure amount of the pinning exposure A is not particularly limited, it is, for example, 0.1 J/cm 2 to 1000 J/cm 2 .
When the ink in the film forming step is the conductive layer forming ink described later, the integrated exposure amount of the pinning exposure A for the conductive layer forming ink is preferably 0.1 J/cm 2 to 1000 J/cm 2 , It is more preferably 1 J/cm 2 to 100 J/cm 2 .
When the ink in the film forming step is an insulating layer forming ink described later, the integrated exposure amount of the pinning exposure A for this insulating layer forming ink is preferably 0.1 J/cm 2 to 100 J/cm 2 , It is more preferably 0.1 J/cm 2 to 10 J/cm 2 .

 風の吹き付けの開始からピニング露光A開始までの時間は、1秒以下であることが好ましい。これにより、段差の側面上から天面上にかけての膜の厚さバラつきをより抑制できる。 The time from the start of blowing air to the start of pinning exposure A is preferably 1 second or less. As a result, variations in the thickness of the film from the side surface to the top surface of the step can be further suppressed.

 膜形成工程は、更に、段差の天面上に付与されたインクであって風が吹き付けられる前のインクに対し、ピニング露光(以下、「ピニング露光B」ともいう)を施すことを含んでもよい。これにより、天面上のインクの粘度を適度に上昇させることができるので、天面上のインクが風の吹き付けによって過度に流れ落ちることをより抑制でき、風の吹き付け後の天面上のインクを天面上に適度に残存させ易くなる。その結果、段差の側面上から天面上にかけての膜の厚さバラつきを抑制する効果がより効果的に発揮される。
 ピニング露光Bの積算露光量の好ましい範囲は、ピニング露光Aの積算露光量の好ましい範囲と同様である。
The film forming step may further include applying pinning exposure (hereinafter also referred to as “pinning exposure B”) to the ink that has been applied to the top surface of the step and has not yet been blown with air. . As a result, the viscosity of the ink on the top surface can be increased appropriately, so that the ink on the top surface can be suppressed from excessively flowing down due to the blowing of the wind, and the ink on the top surface after the blowing of the wind can be prevented. It becomes easy to make it remain moderately on the top surface. As a result, the effect of suppressing variations in the thickness of the film from the side surface to the top surface of the step is exhibited more effectively.
The preferred range of the integrated exposure amount of the pinning exposure B is the same as the preferred range of the integrated exposure amount of the pinning exposure A.

 なお、上記ピニング露光A(即ち、インクに対し風が吹き付けられる前のピニング露光)及び上記ピニング露光B(即ち、インクに対し風が吹き付けられた後のピニング露光)は、いずれも任意の操作である。
 従って、膜形成工程は、ピニング露光A及びピニング露光Bのいずれか一方のみを実施してもよいし、両方とも実施してもよいし、両方とも実施しなくてもよい。
Note that both the pinning exposure A (that is, the pinning exposure before wind is blown against the ink) and the above pinning exposure B (that is, the pinning exposure after the wind is blown against the ink) are arbitrary operations. be.
Therefore, in the film forming process, either one of the pinning exposure A and the pinning exposure B may be performed, both of them may be performed, or neither of them may be performed.

(加熱)
 膜形成工程は、インクが付与された段差付き基板を100℃以上の温度に加熱することを含んでもよい。
 これにより、インクの加熱乾燥によってインクの流動性を抑制できるので、段差の側面に付着したインクが重力によって流れ落ちることを抑制できる。従って、段差の側面上から天面上にかけての膜の厚さバラつきをより抑制できる。
(heating)
The film forming step may include heating the stepped substrate to which the ink is applied to a temperature of 100° C. or higher.
As a result, the fluidity of the ink can be suppressed by heating and drying the ink, so that the ink adhering to the side surface of the step can be suppressed from flowing down due to gravity. Therefore, variations in the thickness of the film from the side surface to the top surface of the step can be further suppressed.

 インクが付与された段差付き基板の加熱温度は、250℃以下であることが好ましく、50℃~200℃であることがより好ましく、60℃~180℃であることがさらに好ましい。 The heating temperature of the stepped substrate to which the ink is applied is preferably 250°C or less, more preferably 50°C to 200°C, and even more preferably 60°C to 180°C.

<隔壁形成工程>
 本開示の膜の形成方法は、膜形成工程の前に、膜が形成される領域を囲む隔壁を、インクジェットヘッドからインクを吐出することにより形成する隔壁形成工程が挙げられる。
 この態様では、膜形成工程の前に形成される隔壁により、膜形成工程におけるインクが本来意図する領域よりも外側へ流れ出す現象、及び/又は、膜形成工程におけるインクが段差付き基板の膜非形成面に回り込む現象が抑制される。
<Partition forming process>
The method of forming a film of the present disclosure includes, before the film forming step, a partition forming step of forming partitions surrounding a region where the film is formed by ejecting ink from an inkjet head.
In this aspect, due to the partition wall formed before the film forming step, the ink in the film forming step flows out of the originally intended region, and/or the ink in the film forming step does not form the film on the stepped substrate. A phenomenon that wraps around the surface is suppressed.

 図6は、本開示の膜の形成方法が隔壁形成工程を含む場合の隔壁形成工程後であって膜形成工程前の一例を示す概略側面図である。
 図6に示す一例は、隔壁19が形成されていること以外は図2に示した一例と同様である。
 膜形成工程前(即ち、インクの付与前)に、膜が形成される領域を囲む隔壁19が予め設けられていることにより、前述した流れ出し及び回り込みが抑制される。
FIG. 6 is a schematic side view showing an example after the partition forming step and before the film forming step in the case where the film forming method of the present disclosure includes the partition forming step.
The example shown in FIG. 6 is the same as the example shown in FIG. 2 except that partition walls 19 are formed.
By previously providing the partition wall 19 surrounding the region where the film is formed before the film forming step (that is, before applying the ink), the outflow and wraparound described above are suppressed.

 隔壁の形成方法については特に制限はないが、生産性の観点から、膜形成工程と同様に、インクジェット法によって形成することが好ましい。 The method of forming the partition is not particularly limited, but from the viewpoint of productivity, it is preferable to form the partition by an inkjet method, as in the film forming process.

<親水化処理を施す工程>
 本開示の膜の形成方法は、膜形成工程の前に、少なくとも膜が形成される領域に、親水処理を施す工程を含んでいてもよい。
 これにより、段差の側面及び角部に対するインクの付着性が向上するので、段差の側面上から天面上にかけての膜の厚さバラつきをより抑制できる。
<Step of applying hydrophilic treatment>
The film forming method of the present disclosure may include a step of subjecting at least the region where the film is to be formed to a hydrophilic treatment prior to the film forming step.
As a result, the adhesion of ink to the side surfaces and corners of the steps is improved, so that variations in the thickness of the film from the side surfaces to the top surface of the steps can be further suppressed.

 親水処理としては、コロナ放電処理、オゾン処理、アルゴンプラズマ処理、酸素プラズマ処理、等が挙げられる。 Examples of hydrophilic treatment include corona discharge treatment, ozone treatment, argon plasma treatment, oxygen plasma treatment, and the like.

<予備加熱工程>
 本開示の膜の形成方法は、膜形成工程の前に、段差付き基板を加熱する工程(本開示において、「予備加熱工程」ともいう)を含むことが好ましい。
 この場合、膜形成工程は、上記温度に加熱された段差付き基板に対し、インクを付与する。
<Preheating step>
The film forming method of the present disclosure preferably includes a step of heating the stepped substrate (also referred to as a “preheating step” in the present disclosure) prior to the film forming step.
In this case, the film forming step applies ink to the stepped substrate heated to the above temperature.

 予備加熱工程を含む態様により、インクの加熱乾燥によってインクの流動性を抑制できるので、段差の側面に付着したインクが重力によって流れ落ちることを抑制できる。従って、段差の天面上から側面上にかけての膜の厚さバラつきをより抑制できる。 Because the fluidity of the ink can be suppressed by heating and drying the ink according to the aspect including the preheating step, it is possible to suppress the ink adhering to the side surface of the step from flowing down due to gravity. Therefore, variations in film thickness from the top surface to the side surface of the step can be further suppressed.

 予備加熱工程における加熱温度は、より好ましくは20℃~120℃であり、更に好ましくは28℃~80℃である。 The heating temperature in the preheating step is more preferably 20°C to 120°C, still more preferably 28°C to 80°C.

<段差付き基板の端面に対する膜形成>
 本開示の膜の形成方法では、前述したとおり、段差付き基板の少なくとも段差の天面上にインクを付与し、付与されたインクに風を吹き付けることにより、段差の側面上から天面上にかけての厚さバラつきが抑制された膜を形成する。
 この際、段差付き基板の端部近傍にもインクを付与し、この端部近傍のインクに対して風を吹き付け、段差付き基板の端面にインクを回り込ませることで、段差付き基板の端面に膜を形成してもよい。これにより、段差付き基板の端面に対する被覆性に優れた膜を形
成できる。
<Film Formation on End Face of Stepped Substrate>
In the method of forming a film of the present disclosure, as described above, ink is applied to at least the top surface of the step of the stepped substrate, and air is blown onto the applied ink, thereby covering the top surface from the side surface of the step. To form a film in which thickness variation is suppressed.
At this time, the ink is also applied to the vicinity of the edge of the substrate with the step, and the ink in the vicinity of the edge is blown with air to flow the ink around the edge of the substrate with the step, thereby forming a film on the edge of the substrate with the step. may be formed. As a result, it is possible to form a film having excellent coverage over the end face of the stepped substrate.

 上述した本開示の膜の形成方法を実施するための装置には特に制限はないが、以下に示す本開示の膜形成装置が好適である。
 
Although there is no particular limitation on the apparatus for carrying out the film forming method of the present disclosure described above, the following film forming apparatus of the present disclosure is suitable.

〔膜形成装置〕
 本開示の膜形成装置は、
 基板厚さ方向の段差を有する基板である段差付き基板における少なくとも段差の天面上に、インクを付与するインクジェットヘッドと、
 段差の天面上に付与されたインクに対し、風を吹き付ける風吹出機と、
を備え、
 段差付き基板とインクジェットヘッドとが相対移動し、
 インクジェットヘッドと風吹出機とが、相対移動の方向に配列されている、
膜形成装置である。
[Film forming device]
The film forming apparatus of the present disclosure is
an inkjet head that applies ink to at least the top surface of the stepped substrate, which is a substrate having a stepped portion in the thickness direction of the substrate;
A wind blower for blowing air against the ink applied on the top surface of the step;
with
The stepped substrate and the inkjet head move relative to each other,
The inkjet head and the air blower are arranged in the direction of relative movement,
It is a film forming apparatus.

 本開示の膜形成装置によれば、本開示の膜の形成方法と同様に、基板厚さ方向の段差を有する基板である段差付き基板に対し、段差の天面上から側面上にかけての厚さバラつきが抑制された膜を形成できる。
 かかる効果が得られる理由は、本開示の膜の形成方法の項にて説明したとおりである。
According to the film forming apparatus of the present disclosure, similarly to the film forming method of the present disclosure, for a stepped substrate that is a substrate having a step in the substrate thickness direction, the thickness from the top surface to the side surface of the step is A film with suppressed variation can be formed.
The reason why such an effect is obtained is as explained in the section of the film forming method of the present disclosure.

 以下、本開示の膜形成装置の好ましい態様について説明する。
 以下の各態様は、適宜、組み合わせて適用してもよい。
Preferred embodiments of the film forming apparatus of the present disclosure will be described below.
Each of the following aspects may be applied in combination as appropriate.

 本開示の膜形成装置は、更に、上記風を回収する風回収機を備えることが好ましい。
 風を回収することによる効果及び風回収機の例については、本開示の膜の形成方法の項にて説明したとおりである。
It is preferable that the film forming apparatus of the present disclosure further includes a wind collector that collects the wind.
The effect of recovering wind and an example of the wind collector are as described in the section of the membrane formation method of the present disclosure.

 風吹出機から吹き出される風の向きは、風吹出機から見てインクジェットヘッドが配置されている側とは反対向きの成分を含むことが好ましい(例えば、後述の図7B参照)。これにより、インクジェットヘッドの方向に風が向かわないので、風の影響によるインクの吐出精度の低下をより抑制できる。 The direction of the air blown from the air blower preferably includes a component in the direction opposite to the side on which the inkjet head is arranged as viewed from the air blower (for example, see FIG. 7B described later). As a result, since the wind does not blow in the direction of the inkjet head, it is possible to further suppress the deterioration of the ink ejection accuracy due to the influence of the wind.

 図7Aは、本開示の膜形成装置の一例を示す概略平面図であり、図7Bは、図7Aの側面図である。
 図7A及び図7Bに示すように、この一例に係る膜形成装置300は、段差付き基板10を搬送するための基板搬送ステージ212と、基板搬送ステージ212が移動する搬送レール210と、インクジェットヘッド24と、風吹出機28と、風回収機30と、ピニング露光機32と、を備える。
 インクジェットヘッド24、風吹出機28、風回収機30、及びピニング露光機32は、搬送向きM1(即ち、基板搬送ステージ212の移動向き)の上流側からこの順に配置されている。
7A is a schematic plan view showing an example of the film forming apparatus of the present disclosure, and FIG. 7B is a side view of FIG. 7A.
As shown in FIGS. 7A and 7B, the film forming apparatus 300 according to this example includes a substrate transport stage 212 for transporting the stepped substrate 10, transport rails 210 on which the substrate transport stage 212 moves, and an inkjet head 24. , an air blower 28 , an air collector 30 , and a pinning exposure machine 32 .
The inkjet head 24, the wind blower 28, the wind recovery device 30, and the pinning exposure device 32 are arranged in this order from the upstream side in the transport direction M1 (that is, the movement direction of the substrate transport stage 212).

 膜形成装置300を用いた膜の形成では、搬送向きM1にて搬送される段差付き基板10における段差の天面を含む領域に対し、インクジェットヘッド24からのインクの付与、風吹出機28からの風の吹き付け、及びピニング露光機32によるピニング露光がこの順に施される。この際、適宜、風回収機30による風の回収が行われる。
 段差の天面上に付与されたインクに対する風吹出機28からの風の吹き付けにより、前述のとおり、段差の側面上から天面上にかけての膜の厚さバラつきが抑制される。
 ピニング露光機32によるピニング露光により、前述のとおり、上記膜の厚さバラつき
がより抑制される。
 風回収機30による風の回収により、前述のとおり、装置内の圧力上昇をより抑制でき、かつ、インクのサテライト滴及び/又はミスト滴を回収することができる。
In the formation of the film using the film forming apparatus 300, ink is applied from the inkjet head 24 and air is applied from the air blower 28 to the area including the top surface of the stepped substrate 10 transported in the transporting direction M1. Wind blowing and pinning exposure by the pinning exposure device 32 are performed in this order. At this time, the wind is collected by the wind collector 30 as appropriate.
By blowing air from the air blower 28 against the ink applied on the top surface of the step, as described above, variations in the thickness of the film from the side surface to the top surface of the step are suppressed.
The pinning exposure by the pinning exposure unit 32 further suppresses variations in the thickness of the film, as described above.
As described above, the recovery of the wind by the wind recovery device 30 makes it possible to further suppress the pressure rise in the apparatus and to recover ink satellite droplets and/or mist droplets.

 図7Bに示すように、この一例において、風吹出機28から吹き出される風の向きW1は、風吹出機28から見てインクジェットヘッド24が配置されている側とは反対向きの成分W1Xを含む。
 これにより、インクジェットヘッド24の方向に風が向かわないので、風の影響によるインクの吐出精度の低下をより抑制できる。
As shown in FIG. 7B, in this example, the direction W1 of the wind blown from the wind blower 28 includes a component W1X in the direction opposite to the side where the inkjet head 24 is arranged when viewed from the wind blower 28. .
As a result, since the wind is not directed toward the inkjet head 24, it is possible to further suppress the deterioration of the ink ejection accuracy due to the influence of the wind.

 図7Bに示すように、この一例では、風回収機30によって風を回収する向きの、段差の天面に対する反射角(以下、単に「反射角」ともいう)が、風吹出機28から吹き出される風の向きW1の、段差の天面に対する入射角(以下、単に「入射角」ともいう)と略等しくなるように調整されている。 As shown in FIG. 7B , in this example, the reflection angle (hereinafter also simply referred to as “reflection angle”) with respect to the top surface of the step in the direction in which the wind is collected by the wind collector 30 is blown out from the wind blower 28. The angle of incidence of the direction W1 of the wind with respect to the top surface of the step (hereinafter also simply referred to as "incident angle") is adjusted to be substantially equal.

 ここで、風吹出機28から吹き出される風の向きW1の、段差の天面に対する入射角は、前述の仰角(例えば、図5参照)に対応する。
 上記入射角の好ましい範囲は、前述の仰角の好ましい範囲と同様である。
Here, the angle of incidence of the direction W1 of the wind blown from the wind blower 28 with respect to the top surface of the step corresponds to the elevation angle described above (see FIG. 5, for example).
The preferred range of the incident angle is the same as the preferred range of the elevation angle described above.

 上記入射角(即ち、仰角)は、風吹出機28から吹き出される風の向きW1によって定義されるので、風吹出機内部における風の進行方向はどのような方向であってもよい。このため、例えば、下記図7Cに示す変形例(膜形成装置300X)においても、図7Bにおける膜形成装置300と同様の効果が奏される。
 図7Cは、図7Bに示す膜形成装置300の変形例(膜形成装置300X)を示す概略断面図である。
 図7Cに示すように、膜形成装置300Xにおける風吹出機28X内部(即ち、流路)において、風は、まず重力方向下向きに進行し、次いで途中で曲がり、風吹出機28Xから吹き出される。風吹出機28Xから吹き出される風の向きW1の入射角(図7C)は、風吹出機28から吹き出される風の向きW1の入射角(図7B)と同程度である。
 図7Cに示すように、風は、膜形成装置300Xにおける風回収機30Xによって回収される。この際の風の反射角(図7C)は、風回収機30によって風を回収する際の風の反射角(図7B)と同程度である。風回収機30Xによって回収された風は、風回収機30X内部(即ち、流路)でその進行方向を曲げ、次いで重力方向上向きに進行する。
 図7Cに示す膜形成装置300Xの構成は、上述した点を除けば、図7Bに示す膜形成装置300と同様である。
 図7Cに示す膜形成装置300Xによっても、図7Bに示す膜形成装置300と同様の効果が奏される。
Since the angle of incidence (that is, the angle of elevation) is defined by the direction W1 of the wind blown out from the wind blower 28, the traveling direction of the wind inside the wind blower may be any direction. Therefore, for example, the modification (film forming apparatus 300X) shown in FIG. 7C below also has the same effect as the film forming apparatus 300 in FIG. 7B.
FIG. 7C is a schematic cross-sectional view showing a modification (film forming apparatus 300X) of the film forming apparatus 300 shown in FIG. 7B.
As shown in FIG. 7C, inside the wind blower 28X (that is, the flow path) in the film forming apparatus 300X, the wind first travels downward in the direction of gravity, then bends halfway and is blown out from the wind blower 28X. The angle of incidence of the direction W1 of the wind blown out from the wind blower 28X (FIG. 7C) is approximately the same as the angle of incidence of the direction W1 of the wind blown out from the wind blower 28 (FIG. 7B).
As shown in FIG. 7C, the wind is collected by the wind collector 30X in the film forming device 300X. The reflection angle of the wind (FIG. 7C) at this time is approximately the same as the reflection angle of the wind (FIG. 7B) when the wind is collected by the wind collector 30 . The wind collected by the wind collector 30X bends in its traveling direction inside the wind collector 30X (that is, the flow path), and then travels upward in the direction of gravity.
The configuration of the film forming apparatus 300X shown in FIG. 7C is the same as that of the film forming apparatus 300 shown in FIG. 7B except for the points described above.
The film forming apparatus 300X shown in FIG. 7C also has the same effect as the film forming apparatus 300 shown in FIG. 7B.

 風吹出機28及び風吹出機28Xは、風の吹き出しを行うオン状態と、風の吹き出しを停止するオフ状態と、の切り替えを行うオンオフ機能を備えることが好ましい。
 これにより、段差の天面を含む領域上のインクに対し、選択的に風を吹き付けることができる。
 オンオフ機能としては、例えば、風吹出機の風吹き出し口にシャッターを設けることによって実現できる。
The air blower 28 and the air blower 28X preferably have an on/off function for switching between an on state for blowing air and an off state for stopping the blowing of air.
Thereby, it is possible to selectively blow the air onto the ink on the area including the top surface of the step.
The on/off function can be realized, for example, by providing a shutter at the air outlet of the air blower.

 本開示の膜形成装置は、図7A~図7Cに示す一例には限定されない。
 段差の天面上から側面上にかけての厚さバラつきが抑制された膜を形成するという効果の点からみれば、風吹出機28から吹き出される風の向きW1及び風回収機30によって風を回収する向きは、上記一例に限定されるものではない。例えば、風吹出機28から吹き出される風の向きW1が重力方向下向きであり、かつ、風回収機30によって風を回収
する向きが、重力方向上向きであってもよい。
 また、段差の天面上から側面上にかけての厚さバラつきが抑制された膜を形成するという効果の点からみれば、風吹出機と風回収機との配置を入れ替えてもよい。また、上記効果の点からみれば、風回収機及びピニング露光機は省略されていてもよい。
The film forming apparatus of the present disclosure is not limited to the example shown in FIGS. 7A-7C.
From the point of view of the effect of forming a film in which the thickness variation from the top surface to the side surface of the step is suppressed, the direction W1 of the wind blown from the wind blower 28 and the wind recovery device 30 recover the wind. The orientation is not limited to the above example. For example, the direction W1 of the wind blown from the wind blower 28 may be downward in the direction of gravity, and the direction in which the wind is recovered by the wind collector 30 may be upward in the direction of gravity.
Moreover, from the viewpoint of the effect of forming a film in which the thickness variation from the top surface to the side surface of the step is suppressed, the arrangement of the wind blower and the wind recovery device may be exchanged. Moreover, from the point of view of the above effect, the wind collecting device and the pinning exposure device may be omitted.

 図8Aは、本開示の膜形成装置の別の一例(膜形成装置300A)を示す概略平面図であり、図8Bは、図8Aの側面図である。
 図8A及び図8Bに示す膜形成装置300Aは、図7A及び図7Bに示す膜形成装置300に対し、風吹出機28から吹き出される風の向きW1を重力方向下向きに変更し、風回収機30によって風を回収する向きを重力方向上向きに変更した例である。図8A及び図8Bに示す膜形成装置300Aにおいても、図7A及び図7Bに示す膜形成装置300と同様に、インクジェットヘッド24、風吹出機28、風回収機30、及びピニング露光機32が、搬送向きM1(即ち、基板搬送ステージ212の移動向き)の上流側からこの順に配置されている。
FIG. 8A is a schematic plan view showing another example (film forming apparatus 300A) of the film forming apparatus of the present disclosure, and FIG. 8B is a side view of FIG. 8A.
A film forming apparatus 300A shown in FIGS. 8A and 8B is different from the film forming apparatus 300 shown in FIGS. This is an example in which the direction of collecting wind is changed upward in the direction of gravity by means of 30 . In the film forming apparatus 300A shown in FIGS. 8A and 8B, similarly to the film forming apparatus 300 shown in FIGS. They are arranged in this order from the upstream side in the transport direction M1 (that is, the movement direction of the substrate transport stage 212).

 図9Aは、本開示の膜形成装置の更に別の一例(膜形成装置300B)を示す概略平面図であり、図9Bは、図9Aの側面図である。
 図9A及び図9Bに示す膜形成装置300Bは、図8A及び図8Bに示す膜形成装置300Aに対し、風吹出機28と風回収機30との位置を入れ替えた例である。即ち、この変形例では、インクジェットヘッド24、風回収機30、風吹出機28、及びピニング露光機32が、搬送向きM1(即ち、基板搬送ステージ212の移動向き)の上流側からこの順に配置されている。
 この膜形成装置300Bによれば、風回収機30により、風吹出機28からの風を回収するだけでなく、段差付き基板10に到着せずに段差付き基板10と一緒に運ばれてくる微小なインク滴(インクミスト)を回収することもできる。そして風吹出機28により、図8A及び図8Bに示す一例と同様に、段差の側面上から天面上にかけての厚さバラつきが抑制された膜を形成することができる。また、風回収機30によって微小なインク滴を回収できることから、風吹出機28からの風による微小なインク滴の拡散を抑制することができる。
FIG. 9A is a schematic plan view showing still another example (film forming apparatus 300B) of the film forming apparatus of the present disclosure, and FIG. 9B is a side view of FIG. 9A.
A film forming apparatus 300B shown in FIGS. 9A and 9B is an example in which the positions of the wind blowing device 28 and the wind collecting device 30 are exchanged with respect to the film forming device 300A shown in FIGS. 8A and 8B. That is, in this modification, the inkjet head 24, the wind recovery device 30, the wind blower 28, and the pinning exposure device 32 are arranged in this order from the upstream side in the transport direction M1 (that is, the movement direction of the substrate transport stage 212). ing.
According to this film forming apparatus 300B, the wind recovery device 30 not only recovers the wind from the wind blowing device 28, but also collects minute particles that do not reach the stepped substrate 10 and are carried together with the stepped substrate 10. Ink droplets (ink mist) can also be recovered. 8A and 8B, the air blower 28 can form a film in which the thickness variation from the side surface to the top surface of the step is suppressed. Further, since minute ink droplets can be collected by the wind collector 30, it is possible to suppress the diffusion of the minute ink droplets due to the wind from the wind blower 28. FIG.

 図10Aは、本開示の膜形成装置の更に別の一例(膜形成装置300C)を示す概略平面図であり、図10Bは、図10Aの側面図である。
 図10A及び図10Bに示す膜形成装置300Cは、図8A及び図8Bに示す膜形成装置300Aに対し、インクジェットヘッド24と風吹出機28との間に、ピニング露光機34を追加した例である。膜形成装置300Cでは、インクジェットヘッド24、ピニング露光機34、風吹出機28、風回収機30、及びピニング露光機32が、搬送向きM1(即ち、基板搬送ステージ212の移動向き)の上流側からこの順に配置されている。
 図10A及び図10Bに示す膜形成装置300Cによれば、天面上に付与されたインクであって風が吹き付けられる前のインクに対し、ピニング露光機34によってピニング露光を施すことができる。これにより、天面上のインクの粘度を適度に上昇させることができるので、天面上のインクが風の吹き付けによって過度に流れ落ちることをより抑制でき、風の吹き付け後の天面上のインクを天面上に適度に残存させ易くなる。その結果、段差の側面上から天面上にかけての膜の厚さバラつきを抑制する効果がより効果的に発揮される。
FIG. 10A is a schematic plan view showing still another example (film forming apparatus 300C) of the film forming apparatus of the present disclosure, and FIG. 10B is a side view of FIG. 10A.
A film forming apparatus 300C shown in FIGS. 10A and 10B is an example in which a pinning exposure device 34 is added between the inkjet head 24 and the wind blower 28 to the film forming apparatus 300A shown in FIGS. 8A and 8B. . In the film forming apparatus 300C, the inkjet head 24, the pinning exposure device 34, the air blowing device 28, the air recovery device 30, and the pinning exposure device 32 are arranged from the upstream side in the transport direction M1 (that is, the movement direction of the substrate transport stage 212). arranged in this order.
According to the film forming apparatus 300C shown in FIGS. 10A and 10B, the pinning exposure can be performed by the pinning exposure device 34 on the ink applied on the top surface and before the wind blows. As a result, the viscosity of the ink on the top surface can be increased appropriately, so that the ink on the top surface can be suppressed from excessively flowing down due to the blowing of the wind, and the ink on the top surface after the blowing of the wind can be prevented. It becomes easy to make it remain moderately on the top surface. As a result, the effect of suppressing variations in the thickness of the film from the side surface to the top surface of the step is exhibited more effectively.

 なお、天面上に付与されたインクであって風が吹き付けられる前のインクに対するピニング露光は、膜形成装置300Cを用いて行うこと以外にも、段差付き基板を往復させることにより、図8A及び図8Bに示す膜形成装置300Aを用いて行うこともできる。 In addition, the pinning exposure for the ink applied on the top surface and before the air is blown can be performed by using the film forming apparatus 300C, or by reciprocating the stepped substrate. A film forming apparatus 300A shown in FIG. 8B can also be used.

 また、天面上のインクが風の吹き付けによって過度に流れ落ちることを抑制する効果の
点からみれば、風が吹き付けられる前のインクに対するピニング露光を行い、かつ、風が吹き付けられた後のインクに対するピニング露光を省略することも可能である。
In addition, from the viewpoint of the effect of suppressing the ink on the top surface from excessively flowing down due to the blowing of the wind, the pinning exposure is performed for the ink before the wind is blown, and the ink after the wind is blown. It is also possible to omit the pinning exposure.

 また、以下に例示するように、図8A及び図8Bに示す一例において、風回収機を省略しても、風回収を実施し得る。 Also, as exemplified below, in the example shown in FIGS. 8A and 8B, the wind recovery can be implemented even if the wind recovery machine is omitted.

 図11は、本開示の膜形成装置の別の一例を示す概略平面図である。
 図11に示される膜形成装置301は、膜形成装置300をベースとし、風回収機30を省略し、その代わりに基板搬送ステージ213に貫通孔214を設けた装置である。この例における貫通孔214は、基板搬送ステージ213における、段差付き基板10に接する領域の外に設けられる。
 膜形成装置301では、段差付き基板10が配置されている空間を、貫通孔214を通じて排気することにより、風を回収できる。
FIG. 11 is a schematic plan view showing another example of the film forming apparatus of the present disclosure.
A film forming apparatus 301 shown in FIG. 11 is based on the film forming apparatus 300, omits the wind collector 30, and has a through hole 214 in the substrate transfer stage 213 instead. The through hole 214 in this example is provided outside the area of the substrate transfer stage 213 that contacts the stepped substrate 10 .
In the film forming apparatus 301, air can be recovered by exhausting the space in which the stepped substrate 10 is arranged through the through holes 214. FIG.

 図12は、本開示の膜形成装置の更に別の一例を示す概略平面図である。
 図12に示される膜形成装置302は、膜形成装置300をベースとし、風回収機30を省略し、その代わりに基板搬送ステージ215に貫通孔216を設け、更に、段差付き基板10Aとして、貫通孔11が形成された段差付き基板を使用した装置である。この例における貫通孔216は、基板搬送ステージ215における、段差付き基板10に接する領域の外側から段差付き基板10に接する領域内におよぶ貫通孔である。この貫通孔216は、風を回収する機能、及び、段差付き基板10を基板搬送ステージ215に吸着させる機能を有する。
 膜形成装置302では、段差付き基板10Aが配置されている空間を、段差付き基板10A自身の貫通孔11及び基板搬送ステージ215の貫通孔216を通じて排気することにより、風を回収できる。
FIG. 12 is a schematic plan view showing still another example of the film forming apparatus of the present disclosure.
A film forming apparatus 302 shown in FIG. 12 is based on the film forming apparatus 300, omits the wind collector 30, and instead has a through hole 216 provided in the substrate transfer stage 215, and a stepped substrate 10A having a through hole. This device uses a stepped substrate in which holes 11 are formed. The through-hole 216 in this example is a through-hole extending from the outside of the area in contact with the substrate 10 with a step to the inside of the area in contact with the substrate 10 with a step in the substrate transfer stage 215 . This through-hole 216 has a function of collecting wind and a function of causing the substrate 10 with a step to be attracted to the substrate transfer stage 215 .
In the film forming apparatus 302, air can be recovered by exhausting the space in which the stepped substrate 10A is arranged through the through holes 11 of the stepped substrate 10A itself and the through holes 216 of the substrate transfer stage 215. FIG.

 本開示の膜形成装置は、上記風吹出機を2つ備え、
 上記2つの風吹出機の間に、インクジェットヘッドが配置され、
 段差付き基板とインクジェットヘッドとが相対移動が往復移動である
ことが好ましい。
 この態様によれば、往路移動及び復路移動の両方において、インクの付与及び風吹き付けを行うことができるので、膜形成の生産性に優れる。
The film forming apparatus of the present disclosure includes two of the air blowers,
An inkjet head is arranged between the two air blowers,
It is preferable that the relative movement between the stepped substrate and the inkjet head is reciprocating movement.
According to this aspect, the application of ink and the blowing of air can be performed in both the forward movement and the backward movement, so the productivity of film formation is excellent.

 図13Aは、風吹出機を2つ備える態様の本開示の膜形成装置の一例を示す概略平面図であり、図13Bは、図13Aの側面図であり、図13Cは、図13Bに対し、段差付き基板の搬送向きを逆向きにした場合の側面図である。 13A is a schematic plan view showing an example of a film forming apparatus of the present disclosure in which two air blowers are provided, FIG. 13B is a side view of FIG. 13A, and FIG. FIG. 10 is a side view of the stepped substrate when the conveying direction is reversed;

 図13A~図13Cに示すように、この一例に係る膜形成装置400は、膜形成装置300に対し、搬送向きM11についてのインクジェットヘッド24の上流側に、風吹出機28B、風回収機30B、及びピニング露光機32Bがこの順の配置にて追加されたものである。
 膜形成装置400における基板搬送ステージ212は、搬送向きM11(往路)及び搬送向きM11B(復路)の両方に移動可能(即ち、往復移動可能)である。
As shown in FIGS. 13A to 13C, the film forming apparatus 400 according to this example includes, with respect to the film forming apparatus 300, an air blower 28B, an air collector 30B, and a pinning exposure machine 32B are added in this order.
The substrate transfer stage 212 in the film forming apparatus 400 is movable in both the transfer direction M11 (outward path) and the transfer direction M11B (return path) (that is, reciprocating movement is possible).

 膜形成装置400を用いた膜の形成では、膜形成装置300を用いた膜の形成と同様に、搬送向きM11(往路)にて搬送される段差付き基板10における段差の天面を含む領域に対し、インクジェットヘッド24からのインクの付与、風吹出機28からの風の吹き付け、及びピニング露光機32によるピニング露光がこの順に施される。この際、適宜、風回収機30による風の回収が行われる。この間、風吹出機28B、風回収機30B、及びピニング露光機32Bは、いずれも作動させず、オフ状態とする。
 更に、膜形成装置400における基板搬送ステージ212は、搬送向きM11B(復路)にて搬送される段差付き基板10における段差の天面を含む領域に対し、インクジェットヘッド24からのインクの付与、風吹出機28Bからの風の吹き付け、及びピニング露光機32Bによるピニング露光がこの順に施される。この際、適宜、風回収機30Bによる風の回収が行われる。この間、風吹出機28、風回収機30、及びピニング露光機32は、いずれも作動させず、オフ状態とする。
In the film formation using the film forming apparatus 400, similarly to the film formation using the film forming apparatus 300, in the region including the top surface of the step in the stepped substrate 10 transported in the transport direction M11 (outward path) On the other hand, application of ink from the inkjet head 24, blowing of air from the air blower 28, and pinning exposure by the pinning exposure device 32 are performed in this order. At this time, the wind is collected by the wind collector 30 as appropriate. During this time, none of the wind blower 28B, the wind collector 30B, and the pinning exposure device 32B are operated and turned off.
Further, the substrate transport stage 212 in the film forming apparatus 400 applies ink from the inkjet head 24 to the area including the top surface of the stepped substrate 10 transported in the transport direction M11B (return path), and blows air. The blowing of air from the machine 28B and the pinning exposure by the pinning exposure machine 32B are performed in this order. At this time, the wind is collected by the wind collector 30B as appropriate. During this time, none of the wind blower 28, the wind recovery device 30, and the pinning exposure device 32 are operated and turned off.

 図13A~図13Cに示す一例とは別の一例として、風吹出機28と風回収機30との位置及び風吹出機28Bと風回収機30Bとの位置の少なくとも一方を入れ替えた例も挙げられる。
 図14Aは、風吹出機を2つ備える態様の本開示の膜形成装置の別の一例を示す概略平面図であり、図14Bは、図14Aの側面図であり、図14Cは、図14Bに対し、段差付き基板の搬送向きを逆向きにした場合の側面図である。
 図14A~図14Cに示す膜形成装置400Aによれば、搬送向きM11(往路)において、風回収機30により、風吹出機28からの風を回収するだけでなく、段差付き基板10に到着せずに段差付き基板10と一緒に運ばれてくる微小なインク滴(インクミスト)を回収することもできる。そして風吹出機28により、図13A~図13Cに示す膜形成装置400を用いた場合と同様に、段差の側面上から天面上にかけての厚さバラつきが抑制された膜を形成することができる。また、風回収機30によって微小なインク滴を回収できることから、風吹出機28からの風による微小なインク滴の拡散を抑制することができる。
 更に、上記変形例(膜形成装置400A)によれば、搬送向きM11B(復路)において、風回収機30Bにより、風吹出機28Bからの風を回収するだけでなく、段差付き基板10に到着せずに段差付き基板10と一緒に運ばれてくる微小なインク滴(インクミスト)を回収することもできる。そして風吹出機28Bにより、図11A~図11Cに示す一例と同様に、段差の側面上から天面上にかけての厚さバラつきが抑制された膜を形成することができる。また、風回収機30Bによって微小なインク滴を回収できることから、風吹出機28Bからの風による微小なインク滴の拡散を抑制することができる。
Another example different from the example shown in FIGS. 13A to 13C is an example in which at least one of the positions of the wind blower 28 and the wind collector 30 and the positions of the wind blower 28B and the wind collector 30B are exchanged. .
14A is a schematic plan view showing another example of the film forming apparatus of the present disclosure in which two air blowers are provided, FIG. 14B is a side view of FIG. 14A, and FIG. On the other hand, it is a side view in the case where the conveying direction of the stepped substrate is reversed.
According to the film forming apparatus 400A shown in FIGS. 14A to 14C, in the transport direction M11 (outward path), the wind collector 30 not only collects the wind from the wind blower 28, but also makes it reach the stepped substrate 10. It is also possible to collect minute ink droplets (ink mist) carried together with the stepped substrate 10 without removing. 13A to 13C, the air blower 28 can be used to form a film in which the thickness variation from the side surface to the top surface of the step is suppressed. . Further, since minute ink droplets can be collected by the wind collector 30, it is possible to suppress the diffusion of the minute ink droplets due to the wind from the wind blower 28. FIG.
Further, according to the modified example (film forming apparatus 400A), in the conveying direction M11B (return trip), the wind recovery device 30B not only recovers the wind from the wind blower 28B, but also makes it reach the stepped substrate 10. It is also possible to collect minute ink droplets (ink mist) carried together with the stepped substrate 10 without removing. 11A to 11C, the air blower 28B can form a film in which the thickness variation from the side surface to the top surface of the step is suppressed. Further, since minute ink droplets can be collected by the wind collector 30B, it is possible to suppress the diffusion of minute ink droplets due to the wind from the wind blower 28B.

 以上で説明した、本開示の膜の形成方法及び本開示の膜形成装置は、段差付き基板に対してインクジェット法によって膜を形成するための方法及び装置として、あらゆる用途に適用できる。
 本開示の膜の形成方法及び本開示の膜形成装置は、例えば、後述する本開示の電子デバイスの製造方法に適用可能である。
The film forming method and the film forming apparatus of the present disclosure described above can be applied to all uses as a method and apparatus for forming a film on a stepped substrate by an inkjet method.
The film forming method of the present disclosure and the film forming apparatus of the present disclosure are applicable, for example, to the method of manufacturing an electronic device of the present disclosure, which will be described later.

〔電子デバイスの製造方法〕
 本開示の電子デバイスの製造方法は、
 配線基板と、配線基板上に配置されている電子部品と、を備える電子基板を準備する工程と、
 電子基板上に、絶縁層及び導電層の少なくとも一方を形成して電子デバイスを得る工程と、
を含み、
 絶縁層及び導電層の少なくとも一方を、前述した本開示の膜の形成方法によって形成する、
電子デバイスの製造方法である。
 本開示の電子デバイスの製造方法は、必要に応じ、その他の工程を含んでいてもよい。
[Method for producing electronic device]
The manufacturing method of the electronic device of the present disclosure includes:
preparing an electronic substrate comprising a wiring substrate and electronic components arranged on the wiring substrate;
forming at least one of an insulating layer and a conductive layer on an electronic substrate to obtain an electronic device;
including
At least one of the insulating layer and the conductive layer is formed by the film forming method of the present disclosure described above;
A method for manufacturing an electronic device.
The method of manufacturing an electronic device of the present disclosure may include other steps as necessary.

 本開示の電子デバイスの製造方法は、前述した本開示の膜の形成方法を含むので、本開示の電子デバイスの製造方法によれば、前述した本開示の膜の形成方法による効果と同様の効果が奏される。
 本開示の電子デバイスの製造方法における、絶縁層及び導電層の少なくとも一方の形成は、前述した本開示の膜形成装置によって行ってもよい。
Since the electronic device manufacturing method of the present disclosure includes the film forming method of the present disclosure described above, according to the electronic device manufacturing method of the present disclosure, effects similar to those of the film forming method of the present disclosure described above are obtained. is played.
At least one of the insulating layer and the conductive layer in the electronic device manufacturing method of the present disclosure may be formed by the film forming apparatus of the present disclosure described above.

 前述したとおり、
本開示の電子デバイスの製造方法における、電子基板(即ち、配線基板と、配線基板上に配置されている電子部品と、を備える電子基板)が、前述した本開示の膜の形成方法における「段差付き基板」に対応し、
本開示の電子デバイスの製造方法における、配線基板上の電子部品の端部、電子部品の端部の側面、及び電子部品の天面が、それぞれ、前述した本開示の膜の形成方法における、「段差」、「段差の側面」、及び「段差の天面」に対応する。
As mentioned above,
In the electronic device manufacturing method of the present disclosure, the electronic substrate (that is, the electronic substrate including the wiring substrate and the electronic components arranged on the wiring substrate) is the above-described "step difference" in the film forming method of the present disclosure. It corresponds to the board with
In the method for manufacturing an electronic device of the present disclosure, the end of the electronic component on the wiring board, the side surface of the end of the electronic component, and the top surface of the electronic component are each ""Step","Side of Step", and "Top of Step".

<電子デバイスの製造方法の一例>
 以下、本開示の電子デバイスの製造方法の一例を、図面を参照しながら説明する。
 但し、本開示の電子デバイスの製造方法は、以下の一例には限定されない。
 本一例に係る電子デバイスの製造方法は、
 実装面を有する配線基板と、配線基板の実装面上に実装された複数の電子部品と、平面視において複数の電子部品のうちの少なくとも1個の電子部品を囲む配置にて設けられたグランド電極と、を備える電子基板を準備する電子基板準備工程と、
 グランド電極によって囲まれたグランド領域内に、少なくとも1個の電子部品を被覆する絶縁性保護層を形成する第1工程と、
 絶縁性保護層上及びグランド電極上に跨り、絶縁性保護層を被覆しかつグランド電極に電気的に接続される電磁波シールド層を、電磁波シールド層形成用インクの固化物として形成する第2工程と、
を含み、
 絶縁性保護層及び電磁波シールド層の少なくとも一方を、前述した本開示の膜の形成方法によって形成する。
<An example of a method for manufacturing an electronic device>
An example of a method for manufacturing an electronic device according to the present disclosure will be described below with reference to the drawings.
However, the manufacturing method of the electronic device of the present disclosure is not limited to the following example.
The method for manufacturing an electronic device according to this example includes:
A wiring board having a mounting surface, a plurality of electronic components mounted on the mounting surface of the wiring board, and a ground electrode arranged to surround at least one electronic component among the plurality of electronic components in plan view. and an electronic board preparation step of preparing an electronic board comprising
a first step of forming an insulating protective layer covering at least one electronic component in a ground area surrounded by a ground electrode;
a second step of forming, as a solidified ink for forming an electromagnetic wave shield layer, an electromagnetic wave shield layer that straddles the insulating protective layer and the ground electrode, covers the insulating protective layer, and is electrically connected to the ground electrode; ,
including
At least one of the insulating protective layer and the electromagnetic wave shielding layer is formed by the film forming method of the present disclosure described above.

 ここで、絶縁性保護層は、絶縁層の一例であり、電磁波シールド層は、導電層の一例である。 Here, the insulating protective layer is an example of an insulating layer, and the electromagnetic wave shielding layer is an example of a conductive layer.

 図15Aは、電子基板準備工程で準備する電子基板の概略平面図であり、図15Bは、図15AのX-X線断面図である。
 図16Aは、絶縁層の一例である絶縁性保護層が形成された電子基板の概略平面図であり、図16Bは、図16AのX-X線断面図である。
 図17Aは、導電層の一例である電磁波シールド層が形成された電子基板(即ち、本実施形態の電子デバイス)の概略平面図であり、図17Bは、図17AのX-X線断面図である。
15A is a schematic plan view of an electronic substrate prepared in the electronic substrate preparation step, and FIG. 15B is a cross-sectional view taken along line XX of FIG. 15A.
16A is a schematic plan view of an electronic substrate on which an insulating protective layer, which is an example of an insulating layer, is formed, and FIG. 16B is a cross-sectional view taken along line XX of FIG. 16A.
FIG. 17A is a schematic plan view of an electronic substrate (that is, the electronic device of the present embodiment) on which an electromagnetic wave shield layer, which is an example of a conductive layer, is formed, and FIG. 17B is a cross-sectional view taken along line XX of FIG. 17A. be.

-電子基板準備工程-
 図15A及び図15Bに示すように、本一例における電子基板準備工程では、実装面を有する配線基板112と、配線基板112の実装面上に実装された複数の電子部品118と、平面視において上記複数の電子部品118を囲む配置にて設けられたグランド電極116と、を備える電子基板110を準備する。
 図示は省略するが、複数の電子部品118の各々は、半田ボールを介し配線基板112の実装面上に実装されている。配線基板112と複数の電子部品118の各々との間には、微小な隙間が存在する(前述の図2参照)。
-Electronic board preparation process-
As shown in FIGS. 15A and 15B, in the electronic board preparation step in this example, a wiring board 112 having a mounting surface, a plurality of electronic components 118 mounted on the mounting surface of the wiring board 112, and and a ground electrode 116 arranged to surround a plurality of electronic components 118. An electronic substrate 110 is prepared.
Although illustration is omitted, each of the plurality of electronic components 118 is mounted on the mounting surface of the wiring board 112 via solder balls. A minute gap exists between the wiring board 112 and each of the plurality of electronic components 118 (see FIG. 2 described above).

 電子基板準備工程は、予め製造された電子基板110を単に準備するだけの工程であってもよいし、電子基板110を製造する工程であってもよい。
 電子基板110の製造方法としては、例えば、プリント配線基板に対して電子部品が実
装されている公知の電子基板の製造方法を適宜参照することができる。
The electronic substrate preparation step may be a step of simply preparing the electronic substrate 110 manufactured in advance, or may be a step of manufacturing the electronic substrate 110 .
As a method for manufacturing the electronic board 110, for example, a known method for manufacturing an electronic board in which electronic components are mounted on a printed wiring board can be appropriately referred to.

 配線基板112としては、配線が形成された基板、例えば、プリント配線基板を用いることができる。
 配線基板112は、グランド電極116以外の電極、ソルダーレジスト層等を含んでいてもよい。
As the wiring board 112, a board on which wiring is formed, for example, a printed wiring board can be used.
The wiring board 112 may include electrodes other than the ground electrode 116, a solder resist layer, and the like.

 グランド電極116は、グランド(GND)電位が印加される電極である。
 この一例では、グランド電極116は、複数の電子部品(電子部品118)を囲む配置にて設けられている。
 言い換えれば、グランド電極116によって囲まれたグランド領域114A内に、複数の電子部品(電子部品118)が実装されている。
The ground electrode 116 is an electrode to which a ground (GND) potential is applied.
In this example, the ground electrode 116 is arranged to surround a plurality of electronic components (electronic components 118).
In other words, a plurality of electronic components (electronic components 118) are mounted within the ground area 114A surrounded by the ground electrode 116. FIG.

 図15Aに示すように、この一例におけるグランド電極116は、不連続なパターン(詳細には、分断されたラインパターン)として形成されているが、本開示におけるグランド電極は、この一例には限定されない。例えば、本開示におけるグランド電極は、連続パターン(即ち、分断されていないラインパターン)として形成されていてもよい。 As shown in FIG. 15A, the ground electrode 116 in this example is formed as a discontinuous pattern (more specifically, a segmented line pattern), but the ground electrode in the present disclosure is not limited to this example. . For example, the ground electrode in the present disclosure may be formed as a continuous pattern (ie, an unbroken line pattern).

 また、この一例におけるグランド電極116は、複数の電子部品(電子部品118)の周囲を完全に一周する環状のパターンとして形成されている。
 しかし、本開示におけるグランド電極116は、この環状のパターンには限定されず、例えば、環状のパターンの少なくとも一部分が欠けたパターンであってもよい。
 複数の電子部品(電子部品118)に対する外部からの電磁波の影響をより低減する観点から、グランド電極116は、複数の電子部品が配置されている領域を、半周以上囲むことが好ましく、3/4周以上囲むことがより好ましい。
Also, the ground electrode 116 in this example is formed as an annular pattern that completely circles around the plurality of electronic components (electronic components 118).
However, the ground electrode 116 in the present disclosure is not limited to this annular pattern, and may be, for example, a pattern in which at least a portion of the annular pattern is missing.
From the viewpoint of further reducing the influence of external electromagnetic waves on the plurality of electronic components (electronic component 118), the ground electrode 116 preferably surrounds the region where the plurality of electronic components are arranged by more than half the circumference. It is more preferable to enclose more than the perimeter.

 また、図15Bに示すように、この一例におけるグランド電極116は、配線基板112に対し、グランド電極116の厚さ方向の一部が埋め込まれる形で形成されているが、本開示におけるグランド電極は、この一例には限定されない。例えば、本開示におけるグランド電極は、グランド電極の厚さ方向の全部が埋め込まれる形で形成されていてもよい。また、本開示におけるグランド電極は、配線基板112に埋め込まれず、配線基板112の表面に形成されていてもよい。また、本開示におけるグランド電極は、配線基板112を貫通するパターンとして形成されていてもよい。 Further, as shown in FIG. 15B , the ground electrode 116 in this example is formed such that a portion of the ground electrode 116 in the thickness direction is embedded in the wiring substrate 112, but the ground electrode in the present disclosure is , but not limited to this example. For example, the ground electrode in the present disclosure may be formed so as to be completely embedded in the thickness direction of the ground electrode. Also, the ground electrode in the present disclosure may be formed on the surface of the wiring board 112 instead of being embedded in the wiring board 112 . Also, the ground electrode in the present disclosure may be formed as a pattern penetrating the wiring board 112 .

 グランド領域114A内に実装されている複数の電子部品118は、同一設計の電子部品であってもよいし、異なる設計の電子部品であってもよい。また、グランド領域内に実装される電子部品の数は、複数であることには限定されず、1個のみであってもよい。
 電子部品118としては、例えば、集積回路(IC;Integrated Circuit)等の半導体チップ、コンデンサ、トランジスタ等が挙げられる。
The plurality of electronic components 118 mounted in the ground area 114A may be electronic components of the same design or electronic components of different designs. Also, the number of electronic components mounted in the ground area is not limited to a plurality, and may be only one.
Examples of the electronic component 118 include a semiconductor chip such as an integrated circuit (IC), a capacitor, a transistor, and the like.

 本開示における電子部品(例えば電子部品118)の高さは、好ましくは100μm以上であり、より好ましくは200μm以上であり、更に好ましくは300μm以上である。
 電子部品の高さは、好ましくは2000μm以下であり、より好ましくは1000μm以下である。
The height of the electronic component (eg, electronic component 118) in the present disclosure is preferably 100 μm or more, more preferably 200 μm or more, and even more preferably 300 μm or more.
The height of the electronic component is preferably 2000 μm or less, more preferably 1000 μm or less.

 本開示におけるグランド電極(例えばグランド電極116)の高さは、好ましくは-10μm以上であり、より好ましくは0μm以上であり、更に好ましくは5μm以上である。
 グランド電極の高さは、好ましくは100μm以下であり、より好ましくは50μm以
下であり、更に好ましくは30μm以下である。
The height of the ground electrode (eg, ground electrode 116) in the present disclosure is preferably −10 μm or more, more preferably 0 μm or more, and even more preferably 5 μm or more.
The height of the ground electrode is preferably 100 μm or less, more preferably 50 μm or less, and even more preferably 30 μm or less.

-第1工程-
 図16A及び図16Bに示すように、第1工程では、グランド領域114A内に実装された複数の電子部品118を被覆する絶縁性保護層122を形成する。
-First step-
As shown in FIGS. 16A and 16B, in the first step, an insulating protective layer 122 is formed to cover the plurality of electronic components 118 mounted within the ground area 114A.

 絶縁性保護層122は、グランド領域114A内であって、複数の電子部品118上とこれら複数の電子部品118の周囲とに跨がる領域に形成される。
 絶縁性保護層の機能は、例えば、電子部品を保護する機能、及び、電子部品と他の導電性部材(例えば電磁波シールド層)との短絡を抑制する機能である。
The insulating protective layer 122 is formed within the ground area 114</b>A in a region extending over the plurality of electronic components 118 and around the plurality of electronic components 118 .
The function of the insulating protective layer is, for example, the function of protecting electronic components and the function of suppressing short circuits between electronic components and other conductive members (for example, electromagnetic shielding layers).

 この一例の第1工程では、例えば、絶縁層形成用インクを用いて、絶縁性保護層122を形成することができる。絶縁層形成用インクは、例えば、活性エネルギー線硬化型インクである。
 この絶縁性保護層122の形成に、前述した本開示の膜の製造方法を適用することができる。
 これにより、電子部品118の側面上から天面上にかけての厚さバラつきが抑制された絶縁性保護層122を形成できる。
In the first step of this example, the insulating protective layer 122 can be formed using, for example, an insulating layer forming ink. The insulating layer forming ink is, for example, an active energy ray-curable ink.
The film manufacturing method of the present disclosure described above can be applied to the formation of the insulating protective layer 122 .
Thereby, it is possible to form the insulating protective layer 122 in which the thickness variation from the side surface to the top surface of the electronic component 118 is suppressed.

-第2工程-
 図17A及び図17Bに示すように、第2工程では、導電層形成用インクとしての電磁波シールド層形成用インクを用い、絶縁性保護層122上とグランド電極116上の少なくとも一部とに跨り、絶縁性保護層122を被覆しかつグランド電極116に電気的に接続する、電磁波シールド層形成用インクの固化物である電磁波シールド層130(即ち、導電層)を形成する。これにより、電子デバイス100が得られる。
 電磁波シールド層130は、グランド領域114A内に電磁波シールド層形成用インクを付与し、固化させて形成する。
 電磁波シールド層形成用インク及び電磁波シールド層の形成方法の好ましい範囲については後述する。
-Second step-
As shown in FIGS. 17A and 17B, in the second step, an electromagnetic wave shielding layer forming ink is used as the conductive layer forming ink, and the ink extends over the insulating protective layer 122 and at least a portion of the ground electrode 116, An electromagnetic wave shielding layer 130 (that is, a conductive layer), which is a solidified ink for forming an electromagnetic wave shielding layer and which covers the insulating protective layer 122 and is electrically connected to the ground electrode 116, is formed. Thus, the electronic device 100 is obtained.
The electromagnetic wave shield layer 130 is formed by applying an electromagnetic wave shield layer forming ink to the ground area 114A and solidifying the ink.
A preferred range of the ink for forming the electromagnetic shield layer and the method for forming the electromagnetic shield layer will be described later.

 電磁波シールド層は、電子部品に対して照射される電磁波をシールドすることにより、電子部品に対する電磁波の影響を低減するための層である。
 かかる電磁波シールド層の性能を、本開示では、「電磁波シールド性」ともいう。
 電磁波シールド層の電磁波シールド性は、電磁波シールド層が、電子部品上に絶縁性保護層を介して配置されることによって発揮される。
 また、電磁波シールド層の電磁波シールド性は、電磁波シールド層にグランド(GND)電位が付与されることによって発揮される。このため、電磁波シールド層は、電磁波シールド層の前提として、導電性を有する。
The electromagnetic wave shield layer is a layer for reducing the influence of electromagnetic waves on electronic components by shielding the electromagnetic waves irradiated to the electronic components.
The performance of such an electromagnetic wave shielding layer is also referred to as "electromagnetic wave shielding property" in the present disclosure.
The electromagnetic wave shielding property of the electromagnetic wave shield layer is exhibited by placing the electromagnetic wave shield layer on the electronic component via an insulating protective layer.
Further, the electromagnetic shielding property of the electromagnetic shielding layer is exhibited by applying a ground (GND) potential to the electromagnetic shielding layer. For this reason, the electromagnetic wave shield layer has conductivity as a premise of the electromagnetic wave shield layer.

 この電磁波シールド層130の形成にも、前述した本開示の膜の製造方法を適用することができる。
 これにより、電子部品118の側面上から天面上にかけての厚さバラつきが抑制された電磁波シールド層130を、絶縁性保護層122を介して形成できる。
The film manufacturing method of the present disclosure described above can also be applied to the formation of the electromagnetic wave shield layer 130 .
As a result, the electromagnetic wave shield layer 130 can be formed with the insulating protective layer 122 interposed therebetween, in which variations in thickness from the side surface to the top surface of the electronic component 118 are suppressed.

 次に、導電層形成用インク(例えば電磁波シールド層形成用インク)、電磁波シールド層の形成方法、絶縁層形成用インク(例えば絶縁性保護層形成用インク)、及び、絶縁性保護層の形成方法の好ましい態様について説明する。 Next, ink for forming a conductive layer (e.g. ink for forming an electromagnetic wave shield layer), method for forming an electromagnetic wave shield layer, ink for forming an insulating layer (e.g. ink for forming an insulating protective layer), and method for forming an insulating protective layer A preferred embodiment of is described.

<導電層形成用インク>
 導電層形成用インク(例えば電磁波シールド層形成用インク)としては、金属粒子を含
むインク(以下、「金属粒子インク」ともいう)、金属錯体を含むインク(以下、「金属錯体インク」ともいう)、又は、金属塩を含むインク(以下、「金属塩インク」ともいう)が好ましく、金属塩インク又は金属錯体インクがより好ましい。
<Ink for forming conductive layer>
Examples of conductive layer-forming inks (for example, electromagnetic wave shielding layer-forming inks) include inks containing metal particles (hereinafter also referred to as "metal particle ink") and inks containing metal complexes (hereinafter also referred to as "metal complex ink"). Alternatively, an ink containing a metal salt (hereinafter also referred to as “metal salt ink”) is preferred, and a metal salt ink or metal complex ink is more preferred.

(金属粒子インク)
 金属粒子インクは、例えば、金属粒子が分散媒中に分散したインク組成物である。
(metal particle ink)
Metal particle ink is, for example, an ink composition in which metal particles are dispersed in a dispersion medium.

-金属粒子-
 金属粒子を構成する金属としては、例えば、卑金属及び貴金属の粒子が挙げられる。卑金属としては、例えば、ニッケル、チタン、コバルト、銅、クロム、マンガン、鉄、ジルコニウム、スズ、タングステン、モリブデン、及びバナジウムが挙げられる。貴金属としては、例えば、金、銀、白金、パラジウム、イリジウム、オスミウム、ルテニウム、ロジウム、レニウム及びこれらの金属を含む合金が挙げられる。中でも、電磁波シールド性の観点から、金属粒子を構成する金属は、銀、金、白金、ニッケル、パラジウム及び銅からなる群より選択される少なくとも1種を含むことが好ましく、銀を含むことがより好ましい。
-metal particles-
Examples of the metal that constitutes the metal particles include particles of base metals and noble metals. Base metals include, for example, nickel, titanium, cobalt, copper, chromium, manganese, iron, zirconium, tin, tungsten, molybdenum, and vanadium. Noble metals include, for example, gold, silver, platinum, palladium, iridium, osmium, ruthenium, rhodium, rhenium, and alloys containing these metals. Among them, from the viewpoint of electromagnetic wave shielding properties, the metal constituting the metal particles preferably contains at least one selected from the group consisting of silver, gold, platinum, nickel, palladium and copper, and more preferably contains silver. preferable.

 金属粒子の平均粒径は特に限定されないが、10nm~500nmであることが好ましく、10nm~200nmであることがより好ましい。平均粒径が上記範囲であると、金属粒子の焼成温度が低下し、電磁波シールド層形成のプロセス適性が高まる。特に、スプレー方式、又はインクジェット記録方式を用いて金属粒子インクを付与する場合に、吐出性が向上し、パターン形成性、及び、電磁波シールド層の膜厚の均一性が向上する傾向にある。ここでいう平均粒径は、金属粒子の一次粒径の平均値(平均一次粒径)を意味する。 Although the average particle size of the metal particles is not particularly limited, it is preferably 10 nm to 500 nm, more preferably 10 nm to 200 nm. When the average particle size is within the above range, the firing temperature of the metal particles is lowered, and the process suitability for forming the electromagnetic wave shielding layer is enhanced. In particular, when the metal particle ink is applied using a spray method or an inkjet recording method, there is a tendency that the ejection property is improved, and the pattern formability and the uniformity of the film thickness of the electromagnetic wave shield layer are improved. The average particle diameter here means the average value of the primary particle diameters of the metal particles (average primary particle diameter).

 金属粒子の平均粒径は、レーザー回折/散乱法により測定される。金属粒子の平均粒径は、例えば、50%体積累積径(D50)を3回測定して、3回測定した値の平均値として算出される値であり、レーザー回折/散乱式粒度分布測定装置(製品名「LA-960」、堀場製作所製)を用いて測定することができる。 The average particle size of metal particles is measured by a laser diffraction/scattering method. The average particle size of the metal particles is, for example, a value calculated as the average value of the values obtained by measuring the 50% volume cumulative diameter (D50) three times and using a laser diffraction/scattering particle size distribution analyzer. (product name “LA-960”, manufactured by HORIBA, Ltd.).

 また、金属粒子インクには、必要に応じて、平均粒径が500nm以上の金属粒子が含まれていてもよい。平均粒径が500nm以上の金属粒子が含まれている場合には、nmサイズの金属粒子がμmサイズの金属粒子の周囲で融点降下することにより、電磁波シールド層を接合できる。 In addition, the metal particle ink may contain metal particles having an average particle size of 500 nm or more, if necessary. When metal particles having an average particle size of 500 nm or more are contained, the electromagnetic wave shielding layer can be bonded by melting point depression of the nanometer-sized metal particles around the micrometer-sized metal particles.

 金属粒子インク中、金属粒子の含有量は、金属粒子インクの全量に対して、10質量%~90質量%であることが好ましく、20質量%~50質量%であることがより好ましい。金属粒子の含有量は10質量%以上であると、表面抵抗率がより低下する。金属粒子の含有量が90質量%以下であると、インクジェット記録方式を用いて金属粒子インクを付与する場合に、吐出性が向上する。 The content of the metal particles in the metal particle ink is preferably 10% by mass to 90% by mass, more preferably 20% by mass to 50% by mass, relative to the total amount of the metal particle ink. When the content of the metal particles is 10% by mass or more, the surface resistivity is further lowered. When the content of the metal particles is 90% by mass or less, the jettability is improved when the metal particle ink is applied using an inkjet recording method.

 金属粒子インクには、金属粒子以外に、例えば、分散剤、樹脂、分散媒、増粘剤、及び表面張力調整剤が含まれていてもよい。 In addition to the metal particles, the metal particle ink may contain, for example, a dispersant, a resin, a dispersion medium, a thickener, and a surface tension adjuster.

-分散剤-
 金属粒子インクは、金属粒子の表面の少なくとも一部に付着する分散剤を含有していてもよい。分散剤は、金属粒子と共に、実質的に金属コロイド粒子を構成する。分散剤は、金属粒子を被覆して金属粒子の分散性を向上させ、凝集を防止する作用を有する。分散剤は、金属コロイド粒子を形成することが可能な有機化合物であることが好ましい。分散剤は、電磁波シールド性及び分散安定性の観点から、アミン、カルボン酸、アルコール、又
は樹脂分散剤であることが好ましい。
- Dispersant -
The metal particle ink may contain a dispersant adhering to at least part of the surface of the metal particles. The dispersant, together with the metal particles, substantially constitutes the metal colloid particles. The dispersant has the effect of coating the metal particles to improve the dispersibility of the metal particles and to prevent aggregation. The dispersant is preferably an organic compound capable of forming colloidal metal particles. The dispersant is preferably an amine, carboxylic acid, alcohol, or resin dispersant from the viewpoint of electromagnetic wave shielding properties and dispersion stability.

 金属粒子インクに含まれる分散剤は、1種であってもよく、2種以上であってもよい。 The number of dispersants contained in the metal particle ink may be one, or two or more.

 アミンとしては、例えば、飽和又は不飽和の脂肪族アミンが挙げられる。中でも、アミンは、炭素数4~8の脂肪族アミンであることが好ましい。炭素数が4~8の脂肪族アミンは、直鎖状であっても分岐鎖状であってもよく、環構造を有していてもよい。 Amines include, for example, saturated or unsaturated aliphatic amines. Among them, the amine is preferably an aliphatic amine having 4 to 8 carbon atoms. The aliphatic amine having 4 to 8 carbon atoms may be linear or branched, and may have a ring structure.

 脂肪族アミンとしては、例えば、ブチルアミン、ノルマルペンチルアミン、イソペンチルアミン、ヘキシルアミン、2-エチルヘキシルアミン、及びオクチルアミンが挙げられる。 Examples of aliphatic amines include butylamine, n-pentylamine, isopentylamine, hexylamine, 2-ethylhexylamine, and octylamine.

 脂環構造を有するアミンとしては、シクロペンチルアミン、シクロヘキシルアミン等のシクロアルキルアミンが挙げられる。 Amines having an alicyclic structure include cycloalkylamines such as cyclopentylamine and cyclohexylamine.

 芳香族アミンとしては、アニリンが挙げられる。 Aniline can be mentioned as an aromatic amine.

 アミンは、アミノ基以外の官能基を有していてもよい。アミノ基以外の官能基としては、例えば、ヒドロキシ基、カルボキシ基、アルコキシ基、カルボニル基、エステル基、及びメルカプト基が挙げられる。 The amine may have functional groups other than amino groups. Functional groups other than amino groups include, for example, hydroxy groups, carboxy groups, alkoxy groups, carbonyl groups, ester groups, and mercapto groups.

 カルボン酸としては、例えば、ギ酸、シュウ酸、酢酸、ヘキサン酸、アクリル酸、オクチル酸、オレイン酸、チアンシ酸、リシノール酸、没食子酸、及びサリチル酸が挙げられる。カルボン酸の一部であるカルボキシ基は、金属イオンと塩を形成していてもよい。塩を形成する金属イオンは、1種であってもよく、2種以上であってもよい。 Carboxylic acids include, for example, formic acid, oxalic acid, acetic acid, hexanoic acid, acrylic acid, octylic acid, oleic acid, thianoic acid, ricinoleic acid, gallic acid, and salicylic acid. A carboxy group that is part of a carboxylic acid may form a salt with a metal ion. The number of metal ions that form a salt may be one, or two or more.

 カルボン酸は、カルボキシ基以外の官能基を有していてもよい。カルボキシ基以外の官能基としては、例えば、アミノ基、ヒドロキシ基、アルコキシ基、カルボニル基、エステル基、及びメルカプト基が挙げられる。 The carboxylic acid may have functional groups other than the carboxy group. Functional groups other than carboxy groups include, for example, amino groups, hydroxy groups, alkoxy groups, carbonyl groups, ester groups, and mercapto groups.

 アルコールとしては、例えば、テルペン系アルコール、アリルアルコール、及びオレイルアルコールが挙げられる。アルコールは、金属粒子の表面に配位しやすく、金属粒子の凝集を抑制することができる。 Examples of alcohol include terpene alcohol, allyl alcohol, and oleyl alcohol. Alcohol is easily coordinated to the surface of the metal particles and can suppress aggregation of the metal particles.

 樹脂分散剤としては、例えば、親水性基としてノニオン性基を有し、溶媒に均一溶解可能な分散剤が挙げられる。樹脂分散剤としては、例えば、ポリビニルピロリドン、ポリエチレングリコール、ポリエチレングリコール-ポリプロピレングリコール共重合体、ポリビニルアルコール、ポリアリルアミン、及びポリビニルアルコール-ポリ酢酸ビニル共重合体が挙げられる。樹脂分散剤の分子量は、重量平均分子量が1000~50000であることが好ましく、1000~30000であることがより好ましい。 The resin dispersant includes, for example, a dispersant that has a nonionic group as a hydrophilic group and is uniformly soluble in a solvent. Examples of resin dispersants include polyvinylpyrrolidone, polyethylene glycol, polyethylene glycol-polypropylene glycol copolymer, polyvinyl alcohol, polyallylamine, and polyvinyl alcohol-polyvinyl acetate copolymer. The weight-average molecular weight of the resin dispersant is preferably 1,000 to 50,000, more preferably 1,000 to 30,000.

 金属粒子インク中、分散剤の含有量は、金属粒子インクの全量に対して、0.5質量%~50質量%でああることが好ましく、1質量%~30質量%であることがより好ましい。 The content of the dispersant in the metal particle ink is preferably 0.5% by mass to 50% by mass, more preferably 1% by mass to 30% by mass, relative to the total amount of the metal particle ink. .

-分散媒-
 金属粒子インクは、分散媒を含むことが好ましい。分散媒の種類は特に限定されず、例えば、炭化水素、アルコール、及び水が挙げられる。
-dispersion medium-
The metal particle ink preferably contains a dispersion medium. The type of dispersion medium is not particularly limited, and examples thereof include hydrocarbons, alcohols, and water.

 金属粒子インクに含まれる分散媒は、1種であってもよく、2種以上であってもよい。
金属粒子インクに含まれる分散媒は、揮発性であることが好ましい。分散媒の沸点は50℃~250℃であることが好ましく、70℃~220℃であることがより好ましく、80℃~200℃であることがさらに好ましい。分散媒の沸点が50℃~250℃であると、金属粒子インクの安定性と焼成性を両立できる傾向にある。
The dispersion medium contained in the metal particle ink may be of one type or two or more types.
The dispersion medium contained in the metal particle ink is preferably volatile. The boiling point of the dispersion medium is preferably 50°C to 250°C, more preferably 70°C to 220°C, even more preferably 80°C to 200°C. When the boiling point of the dispersion medium is 50° C. to 250° C., there is a tendency that both the stability and the sinterability of the metal particle ink can be achieved.

 炭化水素としては、脂肪族炭化水素、及び芳香族炭化水素が挙げられる。 Hydrocarbons include aliphatic hydrocarbons and aromatic hydrocarbons.

 脂肪族炭化水素としては、例えば、テトラデカン、オクタデカン、ヘプタメチルノナン、テトラメチルペンタデカン、ヘキサン、ヘプタン、オクタン、ノナン、デカン、トリデカン、メチルペンタン、ノルマルパラフィン、イソパラフィン等の飽和脂肪族炭化水素又は不飽和脂肪族炭化水素が挙げられる。 Examples of aliphatic hydrocarbons include saturated aliphatic hydrocarbons such as tetradecane, octadecane, heptamethylnonane, tetramethylpentadecane, hexane, heptane, octane, nonane, decane, tridecane, methylpentane, normal paraffin and isoparaffin, or unsaturated hydrocarbons. Aliphatic hydrocarbons are mentioned.

 芳香族炭化水素としては、例えば、トルエン、及びキシレンが挙げられる。 Aromatic hydrocarbons include, for example, toluene and xylene.

 アルコールとしては、脂肪族アルコール、及び脂環式アルコールが挙げられる。分散媒としてアルコールを使用する場合には、分散剤は、アミン又はカルボン酸であることが好ましい。 Alcohols include aliphatic alcohols and alicyclic alcohols. When alcohol is used as the dispersing medium, the dispersing agent is preferably an amine or carboxylic acid.

 脂肪族アルコールとしては、例えば、ヘプタノール、オクタノール(例えば、1-オクタノール、2-オクタノール、3-オクタノール等)、デカノール(例えば、1-デカノール等)、ラウリルアルコール、テトラデシルアルコール、セチルアルコール、2-エチル-1-ヘキサノール、オクタデシルアルコール、ヘキサデセノール、オレイルアルコール等の飽和又は不飽和の鎖中にエーテル結合を含んでいてもよい炭素数6~20の脂肪族アルコールが挙げられる。 Examples of aliphatic alcohols include heptanol, octanol (eg, 1-octanol, 2-octanol, 3-octanol, etc.), decanol (eg, 1-decanol, etc.), lauryl alcohol, tetradecyl alcohol, cetyl alcohol, 2- C6-20 aliphatic alcohols which may contain an ether bond in the saturated or unsaturated chain, such as ethyl-1-hexanol, octadecyl alcohol, hexadecenol and oleyl alcohol.

 脂環式アルコールとしては、例えば、シクロヘキサノール等のシクロアルカノール;テルピネオール(α、β、γ異性体、又はこれらの任意の混合物を含む。)、ジヒドロテルピネオール等のテルペンアルコール;ジヒドロターピネオール、ミルテノール、ソブレロール、メントール、カルベオール、ペリリルアルコール、ピノカルベオール、ソブレロール、及びベルベノールが挙げられる。 Alicyclic alcohols include, for example, cycloalkanols such as cyclohexanol; terpineol (including α, β, γ isomers, or any mixture thereof), terpene alcohols such as dihydroterpineol; dihydroterpineol, myrtenol, Sobrerol, menthol, carveol, perillyl alcohol, pinocarveol, sobrerol, and verbenol.

 分散媒は水であってもよい。粘度、表面張力、揮発性等の物性を調整する観点から、分散媒は、水と、他の溶媒との混合溶媒であってもよい。水と混合させる他の溶媒は、アルコールであることが好ましい。水と併用して用いられるアルコールは、水と混和可能な沸点130℃以下のアルコールであることが好ましい。アルコールとしては、例えば、1-プロパノール、2-プロパノール、1-ブタノール、2-ブタノール、tert-ブタノ
ール、1-ペンタノール、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノプロピルエーテル、及びプロピレングリコールモノメチルエーテルが挙げられる。
The dispersion medium may be water. From the viewpoint of adjusting physical properties such as viscosity, surface tension and volatility, the dispersion medium may be a mixed solvent of water and other solvents. Another solvent that is mixed with water is preferably an alcohol. The alcohol used in combination with water is preferably an alcohol miscible with water and having a boiling point of 130° C. or less. Alcohols include, for example, 1-propanol, 2-propanol, 1-butanol, 2-butanol, tert-butanol, 1-pentanol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, and propylene. Glycol monomethyl ether is mentioned.

 金属粒子インク中、分散媒の含有量は、金属粒子インクの全量に対して、1質量%~50質量%であることが好ましい。分散媒の含有量が1質量%~50質量%であれば、電磁波シールド層形成用インクとして十分な導電性を得ることができる。分散媒の含有量は10質量%~45質量%であることがより好ましく、20質量%~40質量%であることがさらに好ましい。 The content of the dispersion medium in the metal particle ink is preferably 1% by mass to 50% by mass with respect to the total amount of the metal particle ink. If the content of the dispersion medium is 1% by mass to 50% by mass, sufficient electrical conductivity can be obtained as the ink for forming the electromagnetic wave shielding layer. The content of the dispersion medium is more preferably 10% by mass to 45% by mass, and even more preferably 20% by mass to 40% by mass.

-樹脂-
 金属粒子インクは、樹脂を含有していてもよい。樹脂としては、例えば、ポリエステル、ポリウレタン、メラミン樹脂、アクリル樹脂、スチレン系樹脂、ポリエーテル、及びテルペン樹脂が挙げられる。
-resin-
The metal particle ink may contain resin. Examples of resins include polyesters, polyurethanes, melamine resins, acrylic resins, styrenic resins, polyethers, and terpene resins.

 金属粒子インクに含まれる樹脂は、1種であってもよく、2種以上であってもよい。 The number of resins contained in the metal particle ink may be one, or two or more.

 金属粒子インク中、樹脂の含有量は、金属粒子インクの全量に対して、0.1質量%~5質量%であることが好ましい。 The content of the resin in the metal particle ink is preferably 0.1% by mass to 5% by mass with respect to the total amount of the metal particle ink.

-増粘剤-
 金属粒子インクは、増粘剤を含有していてもよい。増粘剤としては、例えば、クレイ、ベントナイト、ヘクトライト等の粘土鉱物;メチルセルロース、カルボキシメチルセルロース、ヒドロキシエチルセルロース、ヒドロキシプロピルセルロース、ヒドロキシプロピルメチルセルロース等のセルロース誘導体;及び、キサンタンガム、グアーガム等の多糖類が挙げられる。
- Thickener -
The metal particle ink may contain a thickening agent. Examples of thickeners include clay minerals such as clay, bentonite and hectorite; cellulose derivatives such as methylcellulose, carboxymethylcellulose, hydroxyethylcellulose, hydroxypropylcellulose and hydroxypropylmethylcellulose; and polysaccharides such as xanthan gum and guar gum. be done.

 金属粒子インクに含まれる増粘剤は、1種であってもよく、2種以上であってもよい。 The number of thickeners contained in the metal particle ink may be one, or two or more.

 金属粒子インク中、増粘剤の含有量は、金属粒子インクの全量に対して、0.1質量%~5質量%であることが好ましい。 The content of the thickener in the metal particle ink is preferably 0.1% by mass to 5% by mass with respect to the total amount of the metal particle ink.

-界面活性剤-
 金属粒子インクは、界面活性剤を含有していてもよい。金属粒子インクに界面活性剤が含まれていると、均一な電磁波シールド層が形成されやすい。
-Surfactant-
The metal particle ink may contain a surfactant. When the metal particle ink contains a surfactant, a uniform electromagnetic wave shielding layer is easily formed.

 界面活性剤は、アニオン性界面活性剤、カチオン性界面活性剤、及びノニオン性界面活性剤のいずれであってもよい。中でも、少量の含有量で表面張力を調整することができるという観点から、界面活性剤は、フッ素系界面活性剤であることが好ましい。また、界面活性剤は、沸点が250℃を超える化合物であることが好ましい。 The surfactant may be an anionic surfactant, a cationic surfactant, or a nonionic surfactant. Among them, the surfactant is preferably a fluorosurfactant from the viewpoint that the surface tension can be adjusted with a small content. Further, the surfactant is preferably a compound having a boiling point of over 250°C.

 金属粒子インクの粘度は特に限定されず、0.01Pa・s~5000Pa・sであればよく、0.1Pa・s~100Pa・sであることが好ましい。金属粒子インクをスプレー法又はインクジェット記録方式を用いて付与する場合には、金属粒子インクの粘度は、1mPa・s~100mPa・sであることが好ましく、2mPa・s~50mPa・sであることがより好ましく、3mPa・s~30mPa・sであることがさらに好ましい。 The viscosity of the metal particle ink is not particularly limited, and may be from 0.01 Pa·s to 5000 Pa·s, preferably from 0.1 Pa·s to 100 Pa·s. When the metal particle ink is applied using a spray method or an inkjet recording method, the viscosity of the metal particle ink is preferably 1 mPa·s to 100 mPa·s, more preferably 2 mPa·s to 50 mPa·s. More preferably, it is 3 mPa·s to 30 mPa·s.

 金属粒子インクの粘度は、粘度計を用い、25℃で測定される値である。粘度は、例えば、VISCOMETER TV-22型粘度計(東機産業社製)を用いて測定される。 The viscosity of the metal particle ink is a value measured at 25°C using a viscometer. Viscosity is measured using, for example, a VISCOMETER TV-22 viscometer (manufactured by Toki Sangyo Co., Ltd.).

 金属粒子インクの表面張力は特に限定されず、20mN/m~45mN/mであることが好ましく、25mN/m~40mN/mであることがより好ましい。
表面張力は、表面張力計を用い、25℃で測定される値である。
The surface tension of the metal particle ink is not particularly limited, and is preferably 20 mN/m to 45 mN/m, more preferably 25 mN/m to 40 mN/m.
Surface tension is a value measured at 25°C using a surface tensiometer.

 金属粒子インクの表面張力は、例えば、DY-700(協和界面科学社製)を用いて測定される。  The surface tension of the metal particle ink is measured using, for example, DY-700 (manufactured by Kyowa Interface Science Co., Ltd.).

-金属粒子の製造方法-
 金属粒子は、市販品であってもよく、公知の方法により製造されたものであってもよい。金属粒子の製造方法としては、例えば、湿式還元法、気相法、及びプラズマ法が挙げられる。金属粒子の好ましい製造方法としては、平均粒径200nm以下の金属粒子を粒径分布が狭くなるように製造可能な湿式還元法が挙げられる。湿式還元法による金属粒子の製造方法は、例えば、特開2017-37761号公報、国際公開第2014-5763
3号等に記載の金属塩及び還元剤を混合して錯化反応液を得る工程と、錯化反応液を加熱して、錯化反応液中の金属イオンを還元し、金属ナノ粒子のスラリーを得る工程と、を含む方法が挙げられる。
-Method for producing metal particles-
The metal particles may be commercially available products or may be produced by known methods. Methods for producing metal particles include, for example, a wet reduction method, a vapor phase method, and a plasma method. As a preferred method for producing metal particles, there is a wet reduction method capable of producing metal particles having an average particle size of 200 nm or less with a narrow particle size distribution. A method for producing metal particles by a wet reduction method, for example, JP 2017-37761, International Publication No. 2014-5763
A step of mixing the metal salt and a reducing agent described in No. 3 and the like to obtain a complexing reaction solution, and heating the complexing reaction solution to reduce the metal ions in the complexing reaction solution to obtain a slurry of metal nanoparticles. and obtaining

 金属粒子インクの製造において、金属粒子インクに含まれる各成分の含有量を所定の範囲に調整するために、加熱処理を行ってもよい。加熱処理は、減圧下で行ってもよく、常圧下で行ってもよい。また、常圧下で行う場合には、大気中で行ってもよく、不活性ガス雰囲気下で行ってもよい。 In the production of the metal particle ink, heat treatment may be performed in order to adjust the content of each component contained in the metal particle ink within a predetermined range. The heat treatment may be performed under reduced pressure or under normal pressure. Moreover, when performing under a normal pressure, you may carry out in air|atmosphere, and you may carry out in inert gas atmosphere.

(金属錯体インク)
 金属錯体インクは、例えば、金属錯体が溶媒中に溶解したインク組成物である。
(metal complex ink)
A metal complex ink is, for example, an ink composition in which a metal complex is dissolved in a solvent.

-金属錯体-
 金属錯体を構成する金属としては、例えば、銀、銅、金、アルミニウム、マグネシウム、タングステン、モリブデン、亜鉛、ニッケル、鉄、白金、スズ、銅、及び鉛が挙げられる。中でも、電磁波シールド性の観点から、金属錯体を構成する金属は、銀、金、白金、ニッケル、パラジウム及び銅からなる群より選択される少なくとも1種を含むことが好ましく、銀を含むことがより好ましい。
-Metal complex-
Examples of metals constituting metal complexes include silver, copper, gold, aluminum, magnesium, tungsten, molybdenum, zinc, nickel, iron, platinum, tin, copper, and lead. Among them, from the viewpoint of electromagnetic wave shielding properties, the metal constituting the metal complex preferably contains at least one selected from the group consisting of silver, gold, platinum, nickel, palladium and copper, and more preferably contains silver. preferable.

 金属錯体インクに含まれる金属の含有量は、金属錯体インクの全量に対して、金属元素換算で1質量%~40質量%であることが好ましく、5質量%~30質量%であることがより好ましく、7質量%~20質量%であることがさらに好ましい。 The content of the metal contained in the metal complex ink is preferably 1% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, in terms of metal element, with respect to the total amount of the metal complex ink. Preferably, it is more preferably 7% by mass to 20% by mass.

 金属錯体は、例えば、金属塩と、錯化剤とを反応させることにより得られる。金属錯体の製造方法としては、例えば、金属塩及び錯化剤を有機溶媒に加え、所定時間撹拌する方法が挙げられる。撹拌方法は特に限定されず、撹拌子、撹拌翼又はミキサーを用いて撹拌させる方法、超音波を加える方法等の公知の方法から適宜選択することができる。 A metal complex is obtained, for example, by reacting a metal salt with a complexing agent. A method for producing a metal complex includes, for example, a method in which a metal salt and a complexing agent are added to an organic solvent and the mixture is stirred for a predetermined period of time. The stirring method is not particularly limited, and can be appropriately selected from known methods such as a method of stirring using a stirrer, a stirring blade or a mixer, and a method of applying ultrasonic waves.

 金属塩としては、金属の酸化物、チオシアン酸塩、硫化物、塩化物、シアン化物、シアン酸塩、炭酸塩、酢酸塩、硝酸塩、亜硝酸塩、硫酸塩、リン酸塩、過塩素酸塩、テトラフルオロホウ酸塩、アセチルアセトナート錯塩、及びカルボン酸塩が挙げられる。 Metal salts include metal oxides, thiocyanates, sulfides, chlorides, cyanides, cyanates, carbonates, acetates, nitrates, nitrites, sulfates, phosphates, perchlorates, Tetrafluoroborates, acetylacetonate complexes, and carboxylates.

 錯化剤としては、アミン、アンモニウムカルバメート系化合物、アンモニウムカーボネート系化合物、アンモニウムバイカーボネート化合物、及びカルボン酸が挙げられる。中でも、電磁波シールド性及び金属錯体の安定性の観点から、錯化剤は、アンモニウムカルバメート系化合物、アンモニウムカーボネート系化合物、アミン、及び、炭素数8~20のカルボン酸からなる群より選択される少なくとも1種を含むことが好ましい。 Complexing agents include amines, ammonium carbamate compounds, ammonium carbonate compounds, ammonium bicarbonate compounds, and carboxylic acids. Among them, from the viewpoint of electromagnetic wave shielding properties and stability of the metal complex, the complexing agent is at least selected from the group consisting of ammonium carbamate compounds, ammonium carbonate compounds, amines, and carboxylic acids having 8 to 20 carbon atoms. It is preferred that one species is included.

 金属錯体は、錯化剤に由来する構造を有しており、アンモニウムカルバメート系化合物、アンモニウムカーボネート系化合物、アミン、及び、炭素数8~20のカルボン酸からなる群より選択される少なくとも1種に由来する構造を有する金属錯体であることが好ましい。 The metal complex has a structure derived from a complexing agent, and contains at least one selected from the group consisting of ammonium carbamate compounds, ammonium carbonate compounds, amines, and carboxylic acids having 8 to 20 carbon atoms. A metal complex having a derived structure is preferred.

 錯化剤であるアミンとしては、例えば、アンモニア、第1級アミン、第2級アミン、第3級アミン、及びポリアミンが挙げられる。 Amines that are complexing agents include, for example, ammonia, primary amines, secondary amines, tertiary amines, and polyamines.

 直鎖状のアルキル基を有する第1級アミンとしては、例えば、メチルアミン、エチルアミン、1-プロピルアミン、n-ブチルアミン、n-ペンチルアミン、n-ヘキシルアミン、ヘプチルアミン、オクチルアミン、ノニルアミン、n-デシルアミン、ウンデシルアミン、ドデシルアミン、トリデシルアミン、テトラデシルアミン、ペンタデシルアミン、
ヘキサデシルアミン、ヘプタデシルアミン、及びオクタデシルアミンが挙げられる。
Examples of primary amines having linear alkyl groups include methylamine, ethylamine, 1-propylamine, n-butylamine, n-pentylamine, n-hexylamine, heptylamine, octylamine, nonylamine, n - decylamine, undecylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine,
Hexadecylamine, heptadecylamine, and octadecylamine are included.

 分岐鎖状アルキル基を有する第1級アミンとしては、例えば、イソプロピルアミン、sec-ブチルアミン、tert-ブチルアミン、イソペンチルアミン、2-エチルヘキシルアミン、及びtert-オクチルアミンが挙げられる。 Examples of primary amines having branched alkyl groups include isopropylamine, sec-butylamine, tert-butylamine, isopentylamine, 2-ethylhexylamine, and tert-octylamine.

 脂環構造を有する第1級アミンとしては、例えば、シクロヘキシルアミン、及びジシクロヘキシルアミンが挙げられる。 Examples of primary amines having an alicyclic structure include cyclohexylamine and dicyclohexylamine.

 ヒドロキシアルキル基を有する第1級アミンとしては、例えば、エタノールアミン、ジエタノールアミン、トリエタノールアミン、N-メチルエタノールアミン、プロパノールアミン、イソプロパノールアミン、ジプロパノールアミン、ジイソプロパノールアミン、トリプロパノールアミン、及びトリイソプロパノールアミンが挙げられる。 Examples of primary amines having a hydroxyalkyl group include ethanolamine, diethanolamine, triethanolamine, N-methylethanolamine, propanolamine, isopropanolamine, dipropanolamine, diisopropanolamine, tripropanolamine, and triisopropanol. Amines are mentioned.

 芳香環を有する第1級アミンとしては、例えば、ベンジルアミン、N,N-ジメチルベンジルアミン、フェニルアミン、ジフェニルアミン、トリフェニルアミン、アニリン、N,N-ジメチルアニリン、N,N-ジメチル-p-トルイジン、4-アミノピリジン、及び4-ジメチルアミノピリジンが挙げられる。 Examples of primary amines having an aromatic ring include benzylamine, N,N-dimethylbenzylamine, phenylamine, diphenylamine, triphenylamine, aniline, N,N-dimethylaniline, N,N-dimethyl-p- Toluidine, 4-aminopyridine, and 4-dimethylaminopyridine.

 第二級アミンとしては、例えば、ジメチルアミン、ジエチルアミン、ジプロピルアミン、ジブチルアミン、ジフェニルアミン、ジシクロペンチルアミン、及びメチルブチルアミンが挙げられる。 Examples of secondary amines include dimethylamine, diethylamine, dipropylamine, dibutylamine, diphenylamine, dicyclopentylamine, and methylbutylamine.

 第三級アミンとしては、例えば、トリメチルアミン、トリエチルアミン、トリプロピルアミン、及びトリフェニルアミンが挙げられる。 Tertiary amines include, for example, trimethylamine, triethylamine, tripropylamine, and triphenylamine.

 ポリアミンとしては、例えば、エチレンジアミン、1,3-ジアミノプロパン、ジエチレントリアミン、トリエチレンテトラミン、テトラメチレンペンタミン、ヘキサメチレンジアミン、テトラエチレンペンタミン、及びこれらの組み合わせが挙げられる。 Polyamines include, for example, ethylenediamine, 1,3-diaminopropane, diethylenetriamine, triethylenetetramine, tetramethylenepentamine, hexamethylenediamine, tetraethylenepentamine, and combinations thereof.

 アミンは、アルキルアミンであることが好ましく、炭素原子数が3~10のアルキルアミンであることが好ましく、炭素原子数が4~10の第1級アルキルアミンであることがより好ましい。 The amine is preferably an alkylamine, preferably an alkylamine having 3 to 10 carbon atoms, more preferably a primary alkylamine having 4 to 10 carbon atoms.

 金属錯体を構成するアミンは1種であってもよく、2種以上であってもよい。 The number of amines constituting the metal complex may be one, or two or more.

 金属塩とアミンとを反応させる際、金属塩のモル量に対するアミンのモル量の比率は、1倍~15倍であることが好ましく、1.5倍~6倍であることがより好ましい。上記比率が上記範囲内であると、錯体形成反応が完結し、透明な溶液が得られる。 When the metal salt and the amine are reacted, the molar ratio of the amine to the metal salt is preferably 1 to 15 times, more preferably 1.5 to 6 times. When the above ratio is within the above range, the complex formation reaction is completed and a transparent solution is obtained.

 錯化剤であるアンモニウムカルバメート系化合物としては、アンモニウムカルバメート、メチルアンモニウムメチルカルバメート、エチルアンモニウムエチルカルバメート、1-プロピルアンモニウム1-プロピルカルバメート、イソプロピルアンモニウムイソプロピルカルバメート、ブチルアンモニウムブチルカルバメート、イソブチルアンモニウムイソブチルカルバメート、アミルアンモニウムアミルカルバメート、ヘキシルアンモニウムヘキシルカルバメート、ヘプチルアンモニウムヘプチルカルバメート、オクチルアンモニウムオクチルカルバメート、2-エチルヘキシルアンモニウム2-エチルヘキシルカルバメート、ノニルアンモニウムノニルカルバメート、及びデシルアンモニウムデシルカルバメートが挙げられる。 Ammonium carbamate compounds as complexing agents include ammonium carbamate, methylammonium methylcarbamate, ethylammonium ethylcarbamate, 1-propylammonium 1-propylcarbamate, isopropylammonium isopropylcarbamate, butylammonium butylcarbamate, isobutylammonium isobutylcarbamate, amyl ammonium amyl carbamate, hexylammonium hexyl carbamate, heptylammonium heptyl carbamate, octylammonium octyl carbamate, 2-ethylhexylammonium 2-ethylhexyl carbamate, nonyl ammonium nonyl carbamate, and decyl ammonium decyl carbamate.

 錯化剤であるアンモニウムカーボネート系化合物としては、アンモニウムカーボネート、メチルアンモニウムカーボネート、エチルアンモニウムカーボネート、1-プロピルアンモニウムカーボネート、イソプロピルアンモニウムカーボネート、ブチルアンモニウムカーボネート、イソブチルアンモニウムカーボネート、アミルアンモニウムカーボネート、ヘキシルアンモニウムカーボネート、ヘプチルアンモニウムカーボネート、オクチルアンモニウムカーボネート、2-エチルヘキシルアンモニウムカーボネート、ノニルアンモニウムカーボネート、及びデシルアンモニウムカーボネートが挙げられる。 Ammonium carbonate-based compounds as complexing agents include ammonium carbonate, methylammonium carbonate, ethylammonium carbonate, 1-propylammonium carbonate, isopropylammonium carbonate, butylammonium carbonate, isobutylammonium carbonate, amylammonium carbonate, hexylammonium carbonate, and heptyl. Ammonium carbonate, octylammonium carbonate, 2-ethylhexylammonium carbonate, nonyl ammonium carbonate, and decylammonium carbonate.

 錯化剤であるアンモニウムバイカーボネート系化合物としては、アンモニウムバイカーボネート、メチルアンモニウムバイカーボネート、エチルアンモニウムバイカーボネート、1-プロピルアンモニウムバイカーボネート、イソプロピルアンモニウムバイカーボネート、ブチルアンモニウムバイカーボネート、イソブチルアンモニウムバイカーボネート、アミルアンモニウムバイカーボネート、ヘキシルアンモニウムバイカーボネート、ヘプチルアンモニウムバイカーボネート、オクチルアンモニウムバイカーボネート、2-エチルヘキシルアンモニウムバイカーボネート、ノニルアンモニウムバイカーボネート、及びデシルアンモニウムバイカーボネートが挙げられる。 Ammonium bicarbonate-based compounds as complexing agents include ammonium bicarbonate, methylammonium bicarbonate, ethylammonium bicarbonate, 1-propylammonium bicarbonate, isopropylammonium bicarbonate, butylammonium bicarbonate, isobutylammonium bicarbonate, amyl Ammonium bicarbonate, hexylammonium bicarbonate, heptyl ammonium bicarbonate, octylammonium bicarbonate, 2-ethylhexylammonium bicarbonate, nonyl ammonium bicarbonate, and decylammonium bicarbonate.

 金属塩と、アンモニウムカルバメート系化合物、アンモニウムカーボネート系化合物、又はアンモニウムバイカーボネート系化合物とを反応させる際、金属塩のモル量に対する、アンモニウムカルバメート系化合物、アンモニウムカーボネート系化合物、又はアンモニウムバイカーボネート系化合物のモル量の比率は、0.01倍~1倍であることが好ましく、0.05倍~0.6倍であることがより好ましい。 When reacting a metal salt with an ammonium carbamate-based compound, an ammonium carbonate-based compound, or an ammonium bicarbonate-based compound, the amount of the ammonium carbamate-based compound, the ammonium carbonate-based compound, or the ammonium bicarbonate-based compound relative to the molar amount of the metal salt. The molar ratio is preferably 0.01 to 1, more preferably 0.05 to 0.6.

 錯化剤であるカルボン酸としては、例えば、カプロン酸、カプリル酸、ペラルゴン酸、2-エチルヘキサン酸、カプリン酸、ネオデカン酸、ウンデカン酸、ラウリン酸、ミリスチン酸、パルミチン酸、ステアリン酸、パルミトレイン酸、オレイン酸、リノール酸、及びリノレン酸が挙げられる。中でも、カルボン酸は、炭素数8~20のカルボン酸であることが好ましく、炭素数10~16のカルボン酸であることがより好ましい。 Carboxylic acid as a complexing agent includes, for example, caproic acid, caprylic acid, pelargonic acid, 2-ethylhexanoic acid, capric acid, neodecanoic acid, undecanoic acid, lauric acid, myristic acid, palmitic acid, stearic acid, and palmitoleic acid. , oleic acid, linoleic acid, and linolenic acid. Among them, the carboxylic acid is preferably a carboxylic acid having 8 to 20 carbon atoms, more preferably a carboxylic acid having 10 to 16 carbon atoms.

 金属錯体インク中、金属錯体の含有量は、金属錯体インクの全量に対して、10質量%~90質量%であることが好ましく、10質量%~40質量%であることがより好ましい。金属錯体の含有量は10質量%以上であると、表面抵抗率がより低下する。金属錯体の含有量が90質量%以下であると、インクジェット記録方式を用いて金属粒子インクを付与する場合に、吐出性が向上する。 The content of the metal complex in the metal complex ink is preferably 10% by mass to 90% by mass, more preferably 10% by mass to 40% by mass, relative to the total amount of the metal complex ink. When the content of the metal complex is 10% by mass or more, the surface resistivity is further lowered. When the content of the metal complex is 90% by mass or less, the jettability is improved when the metal particle ink is applied using an inkjet recording method.

-溶媒-
 金属錯体インクは、溶媒を含有することが好ましい。溶媒は、金属錯体等の金属錯体インクに含まれる成分を溶解することができれば特に限定されない。溶媒は、製造容易性の観点から、沸点が30℃~300℃であることが好ましく、50℃~200℃であることがより好ましく、50℃~150℃であることがより好ましい。
-solvent-
The metal complex ink preferably contains a solvent. The solvent is not particularly limited as long as it can dissolve the components contained in the metal complex ink such as the metal complex. From the viewpoint of ease of production, the solvent preferably has a boiling point of 30°C to 300°C, more preferably 50°C to 200°C, and more preferably 50°C to 150°C.

 金属錯体インク中、溶媒の含有量は、金属錯体に対する金属イオンの濃度(金属錯体1gに対して遊離イオンとして存在する金属の量)が、0.01mmol/g~3.6mmol/gであることが好ましく、0.05mmol/g~2mmol/gであることがより好ましい。金属イオンの濃度が上記範囲内であると、金属錯体インクが流動性に優れ、かつ、電磁波シールド性を得ることができる。 The content of the solvent in the metal complex ink is such that the concentration of the metal ion relative to the metal complex (the amount of metal present as free ions per 1 g of the metal complex) is 0.01 mmol/g to 3.6 mmol/g. is preferred, and 0.05 mmol/g to 2 mmol/g is more preferred. When the metal ion concentration is within the above range, the metal complex ink has excellent fluidity and can obtain electromagnetic wave shielding properties.

 溶媒としては、例えば、炭化水素、環状炭化水素、芳香族炭化水素、カルバメート、アルケン、アミド、エーテル、エステル、アルコール、チオール、チオエーテル、ホスフィン、及び水が挙げられる。金属錯体インクに含まれる溶媒は、1種のみであってもよく、
2種以上であってもよい。
Solvents include, for example, hydrocarbons, cyclic hydrocarbons, aromatic hydrocarbons, carbamates, alkenes, amides, ethers, esters, alcohols, thiols, thioethers, phosphines, and water. Only one solvent may be contained in the metal complex ink,
Two or more types may be used.

 炭化水素は、炭素数6~20の直鎖状又は分枝状の炭化水素であることが好ましい。炭化水素としては、例えば、ペンタン、ヘキサン、ヘプタン、オクタン、ノナン、デカン、ウンデカン、ドデカン、トリデカン、テトラデカン、ペンタデカン、ヘキサデカン、オクタデカン、ノナデカン及びイコサンが挙げられる。 The hydrocarbon is preferably a linear or branched hydrocarbon having 6 to 20 carbon atoms. Hydrocarbons include, for example, pentane, hexane, heptane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, hexadecane, octadecane, nonadecane and icosane.

 環状炭化水素は、炭素数6~20の環状炭化水素であることが好ましい。環状炭化水素としては、例えば、シクロヘキサン、シクロヘプタン、シクロオクタン、シクロノナン、シクロデカン、及びデカリンを含むことができる。 The cyclic hydrocarbon is preferably a cyclic hydrocarbon having 6 to 20 carbon atoms. Cyclic hydrocarbons can include, for example, cyclohexane, cycloheptane, cyclooctane, cyclononane, cyclodecane, and decalin.

 芳香族炭化水素としては、例えば、ベンゼン、トルエン、キシレン、及びテトラリンが挙げられる。 Aromatic hydrocarbons include, for example, benzene, toluene, xylene, and tetralin.

 エーテルは、直鎖状エーテル、分枝鎖状エーテル、及び環状エーテルのいずれであってもよい。エーテルとしては、例えば、ジエチルエーテル、ジプロピルエーテル、ジブチルエーテル、メチル-t-ブチルエーテル、テトラヒドロフラン、テトラヒドロピラン、ジヒドロピラン、及び1,4-ジオキサンが挙げられる。 The ether may be any of straight-chain ether, branched-chain ether, and cyclic ether. Ethers include, for example, diethyl ether, dipropyl ether, dibutyl ether, methyl-t-butyl ether, tetrahydrofuran, tetrahydropyran, dihydropyran, and 1,4-dioxane.

 アルコールは、第1級アルコール、第2級アルコール、及び第3級アルコールのいずれであってもよい。 The alcohol may be any of primary alcohol, secondary alcohol, and tertiary alcohol.

 アルコールとしては、例えば、エタノール、1-プロパノール、2-プロパノール、1-メトキシ-2-プロパノール、1-ブタノール、2-ブタノール、1-ペンタノール、2-ペンタノール、3-ペンタノール、1-ヘキサノール、2-ヘキサノール、3-ヘキサノール、1-オクタノール、2-オクタノール、3-オクタノール、テトラヒドロフルフリルアルコール、シクロペンタノール、テルピネオール、デカノール、イソデシルアルコール、ラウリルアルコール、イソラウリルアルコール、ミリスチルアルコール、イソミリスチルアルコール、セチルアルコール(セタノール)、イソセチルアルコール、ステアリルアルコール、イソステアリルアルコール、オレイルアルコール、イソオレイルアルコール、リノリルアルコール、イソリノリルアルコール、パルミチルアルコール、イソパルミチルアルコール、アイコシルアルコール、及びイソアイコシルアルコールが挙げられる。 Examples of alcohols include ethanol, 1-propanol, 2-propanol, 1-methoxy-2-propanol, 1-butanol, 2-butanol, 1-pentanol, 2-pentanol, 3-pentanol and 1-hexanol. , 2-hexanol, 3-hexanol, 1-octanol, 2-octanol, 3-octanol, tetrahydrofurfuryl alcohol, cyclopentanol, terpineol, decanol, isodecyl alcohol, lauryl alcohol, isolauryl alcohol, myristyl alcohol, isomyristyl alcohol, cetyl alcohol (cetanol), isocetyl alcohol, stearyl alcohol, isostearyl alcohol, oleyl alcohol, isoleyl alcohol, linolyl alcohol, isolinolyl alcohol, palmityl alcohol, isopalmityl alcohol, eicosyl alcohol, and iso Aicosyl alcohols can be mentioned.

 ケトンとしては、例えば、アセトン、メチルエチルケトン、メチルイソブチルケトン、及びシクロヘキサノンが挙げられる。 Ketones include, for example, acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone.

 エステルとしては、例えば、酢酸メチル、酢酸エチル、酢酸イソプロピル、酢酸ブチル、酢酸イソブチル、酢酸sec-ブチル、酢酸メトキシブチル、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、エチレングリコールモノブチルエーテルアセテート、ジエチレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノブチルエーテルアセテート、ジプロピレングリコールモノメチルエーテルアセテート、ジプロピレングリコールモノエチルエーテルアセテート、ジプロピレングリコールモノブチルエーテルアセテート、及び3-メトキシブチルアセテートが挙げられる。 Examples of esters include methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate, isobutyl acetate, sec-butyl acetate, methoxybutyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol. monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, dipropylene glycol monoethyl ether acetate, Propylene glycol monobutyl ether acetate, and 3-methoxybutyl acetate.

-還元剤-
 金属錯体インクは、還元剤を含有していてもよい。金属錯体インクに還元剤が含まれて
いると、金属錯体から金属への還元が促進される。
-Reducing agent-
The metal complex ink may contain a reducing agent. When the metal complex ink contains a reducing agent, the reduction of the metal complex to the metal is promoted.

 還元剤としては、例えば、水素化ホウ素金属塩、水素化アルミニウム塩、アミン、アルコール、有機酸、還元糖、糖アルコール、亜硫酸ナトリウム、ヒドラジン化合物、デキストリン、ハイドロキノン、ヒドロキシルアミン、エチレングリコール、グルタチオン、及びオキシム化合物が挙げられる。 Examples of reducing agents include metal borohydride salts, aluminum hydride salts, amines, alcohols, organic acids, reducing sugars, sugar alcohols, sodium sulfite, hydrazine compounds, dextrin, hydroquinone, hydroxylamine, ethylene glycol, glutathione, and oxime compounds.

 還元剤は、特表2014-516463号公報に記載のオキシム化合物であってもよい。オキシム化合物としては、例えば、アセトンオキシム、シクロヘキサノンオキシム、2-ブタノンオキシム、2,3-ブタンジオンモノオキシム、ジメチルグリオキシム、メチルアセトアセテートモノオキシム、メチルピルベートモノオキシム、ベンズアルデヒドオキシム、1-インダノンオキシム、2-アダマンタノンオキシム、2-メチルベンズアミドオキシム、3-メチルベンズアミドオキシム、4-メチルベンズアミドオキシム、3-アミノベンズアミドオキシム、4-アミノベンズアミドオキシム、アセトフェノンオキシム、ベンズアミドオキシム、及びピナコロンオキシムが挙げられる。 The reducing agent may be an oxime compound described in JP 2014-516463. Examples of oxime compounds include acetone oxime, cyclohexanone oxime, 2-butanone oxime, 2,3-butanedione monoxime, dimethylglyoxime, methylacetoacetate monoxime, methylpyruvate monoxime, benzaldehyde oxime, and 1-indanone. oximes, 2-adamantanone oxime, 2-methylbenzamide oxime, 3-methylbenzamide oxime, 4-methylbenzamide oxime, 3-aminobenzamide oxime, 4-aminobenzamide oxime, acetophenone oxime, benzamide oxime, and pinacolone oxime .

 金属錯体インクに含まれる還元剤は、1種であってもよく、2種以上であってもよい。 The number of reducing agents contained in the metal complex ink may be one, or two or more.

 金属錯体インク中、還元剤の含有量は特に限定されないが、金属錯体インクの全量に対して、0.1質量%~20質量%であることが好ましく、0.3質量%~10質量%であることがより好ましく、1質量%~5質量%であることがさらに好ましい。 The content of the reducing agent in the metal complex ink is not particularly limited. more preferably 1% by mass to 5% by mass.

-樹脂-
 金属錯体インクは、樹脂を含有していてもよい。金属錯体インクに樹脂が含まれていると、金属錯体インクの基材への密着性が向上する。
-resin-
The metal complex ink may contain resin. When the metal complex ink contains a resin, the adhesion of the metal complex ink to the substrate is improved.

 樹脂としては、例えば、ポリエステル、ポリエチレン、ポリプロピレン、ポリアセタール、ポリオレフィン、ポリカーボネート、ポリアミド、フッ素樹脂、シリコーン樹脂、エチルセルロース、ヒドロキシエチルセルロース、ロジン、アクリル樹脂、ポリ塩化ビニル、ポリスルホン、ポリビニルピロリドン、ポリビニルアルコール、ポリビニル系樹脂、ポリアクリロニトリル、ポリスルフィド、ポリアミドイミド、ポリエーテル、ポリアリレート、ポリエーテルエーテルケトン、ポリウレタン、エポキシ樹脂、ビニルエステル樹脂、フェノール樹脂、メラミン樹脂、及び尿素樹脂が挙げられる。 Examples of resins include polyester, polyethylene, polypropylene, polyacetal, polyolefin, polycarbonate, polyamide, fluorine resin, silicone resin, ethyl cellulose, hydroxyethyl cellulose, rosin, acrylic resin, polyvinyl chloride, polysulfone, polyvinylpyrrolidone, polyvinyl alcohol, polyvinyl-based Resins, polyacrylonitrile, polysulfides, polyamideimides, polyethers, polyarylates, polyetheretherketones, polyurethanes, epoxy resins, vinyl ester resins, phenolic resins, melamine resins, and urea resins.

 金属錯体インクに含まれる樹脂は、1種であってもよく、2種以上であってもよい。 The number of resins contained in the metal complex ink may be one, or two or more.

-添加剤-
 金属錯体インクは、本開示の効果を損なわない範囲で、さらに、無機塩、有機塩、シリカ等の無機酸化物;表面調整剤、湿潤剤、架橋剤、酸化防止剤、防錆剤、耐熱安定剤、界面活性剤、可塑剤、硬化剤、増粘剤、シランカップリング剤等の添加剤を含有してもよい。金属錯体インク中、添加剤の合計含有量は、金属錯体インクの全量に対して、20質量%以下であることが好ましい。
-Additive-
The metal complex ink further contains an inorganic salt, an organic salt, an inorganic oxide such as silica; Additives such as agents, surfactants, plasticizers, curing agents, thickeners, and silane coupling agents may be contained. The total content of additives in the metal complex ink is preferably 20% by mass or less with respect to the total amount of the metal complex ink.

 金属錯体インクの粘度は特に限定されず、0.01Pa・s~5000Pa・sであればよく、0.1Pa・s~100Pa・sであることが好ましい。金属錯体インクをスプレー法又はインクジェット記録方式を用いて付与する場合には、金属錯体インクの粘度は、1mPa・s~100mPa・sであることが好ましく、2mPa・s~50mPa・sであることがより好ましく、3mPa・s~30mPa・sであることがさらに好ましい。 The viscosity of the metal complex ink is not particularly limited, and may be 0.01 Pa·s to 5000 Pa·s, preferably 0.1 Pa·s to 100 Pa·s. When the metal complex ink is applied using a spray method or an inkjet recording method, the viscosity of the metal complex ink is preferably 1 mPa·s to 100 mPa·s, more preferably 2 mPa·s to 50 mPa·s. More preferably, it is 3 mPa·s to 30 mPa·s.

 金属錯体インクの粘度は、粘度計を用い、25℃で測定される値である。粘度は、例えば、VISCOMETER TV-22型粘度計(東機産業社製)を用いて測定される。 The viscosity of the metal complex ink is a value measured at 25°C using a viscometer. Viscosity is measured using, for example, a VISCOMETER TV-22 viscometer (manufactured by Toki Sangyo Co., Ltd.).

 金属錯体インクの表面張力は特に限定されず、20mN/m~45mN/mであることが好ましく、25mN/m~35mN/mであることがより好ましい。表面張力は、表面張力計を用い、25℃で測定される値である。 The surface tension of the metal complex ink is not particularly limited, and is preferably 20 mN/m to 45 mN/m, more preferably 25 mN/m to 35 mN/m. Surface tension is a value measured at 25°C using a surface tensiometer.

 金属錯体インクの表面張力は、例えば、DY-700(協和界面科学社製)を用いて測定される。  The surface tension of the metal complex ink is measured using, for example, DY-700 (manufactured by Kyowa Interface Science Co., Ltd.).

(金属塩インク)
 金属塩インクは、例えば、金属塩が溶媒中に溶解したインク組成物である。
(metal salt ink)
A metal salt ink is, for example, an ink composition in which a metal salt is dissolved in a solvent.

-金属塩-
 金属塩を構成する金属としては、例えば、銀、銅、金、アルミニウム、マグネシウム、タングステン、モリブデン、亜鉛、ニッケル、鉄、白金、スズ、銅、及び鉛が挙げられる。中でも、電磁波シールド性の観点から、金属塩を構成する金属は、銀、金、白金、ニッケル、パラジウム及び銅からなる群より選択される少なくとも1種を含むことが好ましく、銀を含むことがより好ましい。
-metal salt-
Examples of metals constituting metal salts include silver, copper, gold, aluminum, magnesium, tungsten, molybdenum, zinc, nickel, iron, platinum, tin, copper, and lead. Among them, from the viewpoint of electromagnetic wave shielding properties, the metal constituting the metal salt preferably contains at least one selected from the group consisting of silver, gold, platinum, nickel, palladium and copper, and more preferably contains silver. preferable.

 金属塩インクに含まれる金属の含有量は、金属塩インクの全量に対して、金属元素換算で1質量%~40質量%であることが好ましく、5質量%~30質量%であることがより好ましく、7質量%~20質量%であることがさらに好ましい。 The content of the metal contained in the metal salt ink is preferably 1% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, in terms of metal element, relative to the total amount of the metal salt ink. Preferably, it is more preferably 7% by mass to 20% by mass.

 金属塩インク中、金属塩の含有量は、金属塩インクの全量に対して、10質量%~90質量%であることが好ましく、10質量%~40質量%であることがより好ましい。金属塩の含有量は10質量%以上であると、表面抵抗率がより低下する。金属塩の含有量が90質量%以下であると、スプレー方式、又はインクジェット記録方式を用いて金属粒子インクを付与する場合に、吐出性が向上する。 The content of the metal salt in the metal salt ink is preferably 10% by mass to 90% by mass, more preferably 10% by mass to 40% by mass, relative to the total amount of the metal salt ink. When the content of the metal salt is 10% by mass or more, the surface resistivity is further lowered. When the content of the metal salt is 90% by mass or less, the jettability is improved when the metal particle ink is applied using a spray method or an inkjet recording method.

 金属塩としては、例えば、金属の安息香酸塩、ハロゲン化物、炭酸塩、クエン酸塩、ヨウ素酸塩、亜硝酸塩、硝酸塩、酢酸塩、リン酸塩、硫酸塩、硫化物、トリフルオロ酢酸塩、及びカルボン酸塩が挙げられる。なお、塩は、2種以上を組み合わせてもよい。 Examples of metal salts include metal benzoates, halides, carbonates, citrates, iodates, nitrites, nitrates, acetates, phosphates, sulfates, sulfides, trifluoroacetates, and carboxylates. In addition, salt may combine 2 or more types.

 金属塩は、電磁波シールド性及び保存安定性の観点から、金属カルボン酸塩であることが好ましい。カルボン酸塩を形成するカルボン酸は、ギ酸及び炭素数1~30のカルボン酸からなる群より選択される少なくとも1種であることが好ましく、炭素数8~20のカルボン酸であることがより好ましく、炭素数8~20の脂肪酸であることがさらに好ましい。脂肪酸は直鎖状であってもよく、分岐鎖状であってもよく、置換基を有していてもよい。 The metal salt is preferably a metal carboxylate from the viewpoint of electromagnetic wave shielding properties and storage stability. The carboxylic acid forming the carboxylic acid salt is preferably at least one selected from the group consisting of formic acid and a carboxylic acid having 1 to 30 carbon atoms, more preferably a carboxylic acid having 8 to 20 carbon atoms. , and fatty acids having 8 to 20 carbon atoms are more preferred. The fatty acid may be linear or branched, and may have a substituent.

 直鎖脂肪酸としては、例えば、酢酸、プロピオン酸、酪酸、吉草酸、ペンタン酸、ヘキサン酸、ヘプタン酸、ベヘン酸、オレイン酸、オクタン酸、ノナン酸、デカン酸、カプロン酸、エナント酸、カプリル酸、ペラルゴン酸、カプリン酸、及びウンデカン酸が挙げられる。 Linear fatty acids include, for example, acetic acid, propionic acid, butyric acid, valeric acid, pentanoic acid, hexanoic acid, heptanoic acid, behenic acid, oleic acid, octanoic acid, nonanoic acid, decanoic acid, caproic acid, enanthic acid, and caprylic acid. , pelargonic acid, capric acid, and undecanoic acid.

 分岐脂肪酸としては、例えば、イソ酪酸、イソ吉草酸、エチルヘキサン酸、ネオデカン酸、ピバル酸、2-メチルペンタン酸、3-メチルペンタン酸、4-メチルペンタン酸、2,2-ジメチルブタン酸、2,3-ジメチルブタン酸、3,3-ジメチルブタン酸、及び2-エチルブタン酸が挙げられる。 Examples of branched fatty acids include isobutyric acid, isovaleric acid, ethylhexanoic acid, neodecanoic acid, pivalic acid, 2-methylpentanoic acid, 3-methylpentanoic acid, 4-methylpentanoic acid, 2,2-dimethylbutanoic acid, 2,3-dimethylbutanoic acid, 3,3-dimethylbutanoic acid, and 2-ethylbutanoic acid.

 置換基を有するカルボン酸としては、例えば、ヘキサフルオロアセチルアセトン酸、ヒドロアンゲリカ酸、3-ヒドロキシ酪酸、2-メチル-3-ヒドロキシ酪酸、3-メトキシ酪酸、アセトンジカルボン酸、3-ヒドロキシグルタル酸、2-メチル-3-ヒドロキシグルタル酸、及び2,2,4,4-ヒドロキシグルタル酸が挙げられる。 Examples of substituted carboxylic acids include hexafluoroacetylacetone acid, hydroangelic acid, 3-hydroxybutyric acid, 2-methyl-3-hydroxybutyric acid, 3-methoxybutyric acid, acetonedicarboxylic acid, 3-hydroxyglutaric acid, 2 -methyl-3-hydroxyglutarate, and 2,2,4,4-hydroxyglutarate.

 金属塩は市販品であってもよく、公知の方法により製造されたものであってもよい。銀塩は、例えば、以下の方法で製造される。 The metal salt may be a commercially available product or may be produced by a known method. A silver salt is manufactured by the following method, for example.

 まず、エタノール等の有機溶媒中に、銀の供給源となる銀化合物(例えば酢酸銀)と、銀化合物のモル当量に対して等量のギ酸又は炭素数1~30の脂肪酸とを加える。所定時間、超音波撹拌機を用いて撹拌し、生成した沈殿物をエタノールで洗浄してデカンテーションする。これらの工程は全て室温(25℃)で行うことができる。銀化合物と、ギ酸又は炭素数1~30の脂肪酸との混合比は、モル比で1:2~2:1であることが好ましく、1:1であることがより好ましい。 First, in an organic solvent such as ethanol, add a silver compound (for example, silver acetate) as a source of silver, and formic acid or a fatty acid having 1 to 30 carbon atoms in an amount equivalent to the molar equivalent of the silver compound. The mixture is stirred for a predetermined time using an ultrasonic stirrer, and the precipitate formed is washed with ethanol and decanted. All these steps can be performed at room temperature (25°C). The mixing ratio of the silver compound to the formic acid or the fatty acid having 1 to 30 carbon atoms is preferably 1:2 to 2:1, more preferably 1:1 in terms of molar ratio.

-溶媒-
 金属塩インクは、溶媒を含有することが好ましい。
 溶媒の種類は、金属塩インクに含まれる金属塩を溶解することができれば特に限定されない。
 溶媒の沸点は、製造容易性の観点から、30℃~300℃であることが好ましく、50℃~300℃であることがより好ましく、50℃~250℃であることがより好ましい。
-solvent-
The metal salt ink preferably contains a solvent.
The type of solvent is not particularly limited as long as it can dissolve the metal salt contained in the metal salt ink.
The boiling point of the solvent is preferably 30°C to 300°C, more preferably 50°C to 300°C, and even more preferably 50°C to 250°C, from the viewpoint of ease of production.

 金属塩インク中、溶媒の含有量は、金属塩に対する金属イオンの濃度(金属塩1gに対して遊離イオンとして存在する金属の量)が、0.01mmol/g~3.6mmol/gであることが好ましく、0.05mmol/g~2.6mmol/gであることがより好ましい。金属イオンの濃度が上記範囲内であると、金属塩インクが流動性に優れ、かつ、電磁波シールド性を得ることができる。 The content of the solvent in the metal salt ink is such that the concentration of metal ions relative to the metal salt (amount of metal present as free ions per 1 g of metal salt) is 0.01 mmol/g to 3.6 mmol/g. is preferred, and 0.05 mmol/g to 2.6 mmol/g is more preferred. When the metal ion concentration is within the above range, the metal salt ink has excellent fluidity and electromagnetic wave shielding properties can be obtained.

 溶媒としては、例えば、炭化水素、環状炭化水素、芳香族炭化水素、カルバメート、アルケン、アミド、エーテル、エステル、アルコール、チオール、チオエーテル、ホスフィン、及び水が挙げられる。
 金属塩インクに含まれる溶媒は、1種のみであってもよく、2種以上であってもよい。
Solvents include, for example, hydrocarbons, cyclic hydrocarbons, aromatic hydrocarbons, carbamates, alkenes, amides, ethers, esters, alcohols, thiols, thioethers, phosphines, and water.
The number of solvents contained in the metal salt ink may be one, or two or more.

 溶媒は、芳香族炭化水素を含むことが好ましい。
 芳香族炭化水素としては、例えば、ベンゼン、トルエン、キシレン、エチルベンゼン、プロピルベンゼン、イソプロピルベンゼン、ブチルベンゼン、イソブチルベンゼン、t-ブチルベンゼン、トリメチルベンゼン、ペンチルベンゼン、ヘキシルベンゼン、テトラリン、ベンジルアルコール、フェノール、クレゾール、安息香酸メチル、安息香酸エチル、安息香酸プロピル、及び安息香酸ブチルが挙げられる。
 芳香族炭化水素における芳香族環の数は、他成分との相溶性の観点から、1つ又は2つが好ましく、1つがより好ましい。
 芳香族炭化水素の沸点は、製造容易性の観点から、50℃~300℃であることが好ましく、60℃~250℃であることがより好ましく、80℃~200℃であることがより好ましい。
The solvent preferably contains an aromatic hydrocarbon.
Examples of aromatic hydrocarbons include benzene, toluene, xylene, ethylbenzene, propylbenzene, isopropylbenzene, butylbenzene, isobutylbenzene, t-butylbenzene, trimethylbenzene, pentylbenzene, hexylbenzene, tetralin, benzyl alcohol, phenol, Cresol, methyl benzoate, ethyl benzoate, propyl benzoate, and butyl benzoate.
From the viewpoint of compatibility with other components, the number of aromatic rings in the aromatic hydrocarbon is preferably one or two, more preferably one.
The boiling point of the aromatic hydrocarbon is preferably 50°C to 300°C, more preferably 60°C to 250°C, even more preferably 80°C to 200°C, from the viewpoint of ease of production.

 溶剤は、芳香族炭化水素と、芳香族炭化水素以外の炭化水素と、を含んでもよい。
 芳香族炭化水素以外の炭化水素としては、炭素数6~20の直鎖状炭化水素、炭素数6~20の分枝状炭化水素、炭素数6~20の脂環式炭化水素が挙げられる。
 芳香族炭化水素以外の炭化水素としては、例えば、ペンタン、ヘキサン、ヘプタン、オ
クタン、ノナン、デカン、ウンデカン、ドデカン、トリデカン、テトラデカン、ペンタデカン、ヘキサデカン、オクタデカン、ノナデカン、デカリン、シクロヘキサン、シクロヘプタン、シクロオクタン、シクロノナン、シクロデカン、デセン、テルペン系化合物及びイコサンが挙げられる。
 芳香族炭化水素以外の炭化水素は不飽和結合を含むことが好ましい。
 不飽和結合を含む芳香族炭化水素以外の炭化水素としては、テルペン系化合物が挙げられる。
 テルペン系化合物は、テルペン系化合物を構成するイソプレン単位の数に応じ、例えば、ヘミテルペン、モノテルペン、セスキテルペン、ジテルペン、セステルテルペン、トリテルペン、セスクアルテルペン、及びテトラテルペンに分類される。
 溶媒としてのテルペン系化合物は、上記のいずれでもよいが、モノテルペンが好ましい。
 モノテルペンとしては、例えば、ピネン(α-ピネン、β-ピネン)、テルピネオール(α-テルピネオール、β-テルピネオール、γ-テルピネオール)、ミルセン、カンフェン、リモネン(d-リモネン、l-リモネン、ジペンテン)、オシメン(α-オシメン、β-オシメン)、アロオシメン、フェランドレン(α-フェランドレン、β-フェランドレン)、テルピネン(α-テルピネン、γ-テルピネン)、テルピノーレン(α-テルピノーレン、β-テルピノーレン、γ-テルピノーレン、δ-テルピノーレン)、1,8-シネオール、1,4-シネオール、サビネン、パラメンタジエン、カレン(δ-3-カレン)が挙げられる。
 モノテルペンとしては、環式モノテルペンが好ましく、ピネン、テルピネオール、又はカレンがより好ましい。
The solvent may contain aromatic hydrocarbons and hydrocarbons other than aromatic hydrocarbons.
Hydrocarbons other than aromatic hydrocarbons include linear hydrocarbons having 6 to 20 carbon atoms, branched hydrocarbons having 6 to 20 carbon atoms, and alicyclic hydrocarbons having 6 to 20 carbon atoms.
Examples of hydrocarbons other than aromatic hydrocarbons include pentane, hexane, heptane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, hexadecane, octadecane, nonadecane, decalin, cyclohexane, cycloheptane, and cyclooctane. , cyclononane, cyclodecane, decene, terpene compounds and icosane.
Hydrocarbons other than aromatic hydrocarbons preferably contain unsaturated bonds.
Hydrocarbons other than aromatic hydrocarbons containing unsaturated bonds include terpene compounds.
Terpene compounds are classified into, for example, hemiterpenes, monoterpenes, sesquiterpenes, diterpenes, sesterterpenes, triterpenes, sesqualterpenes, and tetraterpenes, depending on the number of isoprene units that constitute the terpene compounds.
The terpene compound as the solvent may be any of the above, but monoterpene is preferred.
Examples of monoterpenes include pinene (α-pinene, β-pinene), terpineol (α-terpineol, β-terpineol, γ-terpineol), myrcene, camphene, limonene (d-limonene, l-limonene, dipentene), Ocimene (α-Ocimene, β-Ocimene), Alloocimene, Phellandrene (α-Phellandrene, β-Phellandrene), Terpinene (α-Terpinene, γ-Terpinene), Terpinolene (α-Terpinolene, β-Terpinolene, γ- terpinolene, δ-terpinolene), 1,8-cineole, 1,4-cineol, sabinene, paramentadiene, carene (δ-3-carene).
The monoterpene is preferably a cyclic monoterpene, more preferably pinene, terpineol, or carene.

 エーテルは、直鎖状エーテル、分枝鎖状エーテル、及び環状エーテルのいずれであってもよい。エーテルとしては、例えば、ジエチルエーテル、ジプロピルエーテル、ジブチルエーテル、メチル-t-ブチルエーテル、テトラヒドロフラン、テトラヒドロピラン、ジヒドロピラン、及び1,4-ジオキサンが挙げられる。 The ether may be any of straight-chain ether, branched-chain ether, and cyclic ether. Ethers include, for example, diethyl ether, dipropyl ether, dibutyl ether, methyl-t-butyl ether, tetrahydrofuran, tetrahydropyran, dihydropyran, and 1,4-dioxane.

 アルコールは、第1級アルコール、第2級アルコール、及び第3級アルコールのいずれであってもよい。 The alcohol may be any of primary alcohol, secondary alcohol, and tertiary alcohol.

 アルコールとしては、例えば、エタノール、1-プロパノール、2-プロパノール、1-メトキシ-2-プロパノール、1-ブタノール、2-ブタノール、1-ペンタノール、2-ペンタノール、3-ペンタノール、1-ヘキサノール、2-ヘキサノール、3-ヘキサノール、1-オクタノール、2-オクタノール、3-オクタノール、テトラヒドロフルフリルアルコール、シクロペンタノール、テルピネオール、デカノール、イソデシルアルコール、ラウリルアルコール、イソラウリルアルコール、ミリスチルアルコール、イソミリスチルアルコール、セチルアルコール(セタノール)、イソセチルアルコール、ステアリルアルコール、イソステアリルアルコール、オレイルアルコール、イソオレイルアルコール、リノリルアルコール、イソリノリルアルコール、パルミチルアルコール、イソパルミチルアルコール、アイコシルアルコール、及びイソアイコシルアルコールが挙げられる。 Examples of alcohols include ethanol, 1-propanol, 2-propanol, 1-methoxy-2-propanol, 1-butanol, 2-butanol, 1-pentanol, 2-pentanol, 3-pentanol and 1-hexanol. , 2-hexanol, 3-hexanol, 1-octanol, 2-octanol, 3-octanol, tetrahydrofurfuryl alcohol, cyclopentanol, terpineol, decanol, isodecyl alcohol, lauryl alcohol, isolauryl alcohol, myristyl alcohol, isomyristyl alcohol, cetyl alcohol (cetanol), isocetyl alcohol, stearyl alcohol, isostearyl alcohol, oleyl alcohol, isoleyl alcohol, linolyl alcohol, isolinolyl alcohol, palmityl alcohol, isopalmityl alcohol, eicosyl alcohol, and iso Aicosyl alcohols can be mentioned.

 ケトンとしては、例えば、アセトン、メチルエチルケトン、メチルイソブチルケトン、及びシクロヘキサノンが挙げられる。 Ketones include, for example, acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone.

 エステルとしては、例えば、酢酸メチル、酢酸エチル、酢酸イソプロピル、酢酸ブチル、酢酸イソブチル、酢酸sec-ブチル、酢酸メトキシブチル、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、エチレングリコールモノブチルエーテルアセテート、ジエチレングリコールモノメチルエーテル
アセテート、ジエチレングリコールモノエチルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノブチルエーテルアセテート、ジプロピレングリコールモノメチルエーテルアセテート、ジプロピレングリコールモノエチルエーテルアセテート、ジプロピレングリコールモノブチルエーテルアセテート、及び3-メトキシブチルアセテートが挙げられる。
Examples of esters include methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate, isobutyl acetate, sec-butyl acetate, methoxybutyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol. monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, dipropylene glycol monoethyl ether acetate, Propylene glycol monobutyl ether acetate, and 3-methoxybutyl acetate.

 金属塩インクの粘度は特に限定されず、0.01Pa・s~5000Pa・sであればよく、0.1Pa・s~100Pa・sであることが好ましい。金属塩インクをスプレー法又はインクジェット記録方式を用いて付与する場合には、金属塩インクの粘度は、1mPa・s~100mPa・sであることが好ましく、2mPa・s~50mPa・sであることがより好ましく、3mPa・s~30mPa・sであることがさらに好ましい。 The viscosity of the metal salt ink is not particularly limited, and may be from 0.01 Pa·s to 5000 Pa·s, preferably from 0.1 Pa·s to 100 Pa·s. When the metal salt ink is applied using a spray method or an inkjet recording method, the viscosity of the metal salt ink is preferably 1 mPa·s to 100 mPa·s, more preferably 2 mPa·s to 50 mPa·s. More preferably, it is 3 mPa·s to 30 mPa·s.

 金属塩インクの粘度は、粘度計を用い、25℃で測定される値である。粘度は、例えば、VISCOMETER TV-22型粘度計(東機産業社製)を用いて測定される。 The viscosity of the metal salt ink is a value measured at 25°C using a viscometer. Viscosity is measured using, for example, a VISCOMETER TV-22 viscometer (manufactured by Toki Sangyo Co., Ltd.).

 金属塩インクの表面張力は特に限定されず、20mN/m~45mN/mであることが好ましく、25mN/m~35mN/mであることがより好ましい。表面張力は、表面張力計を用い、25℃で測定される値である。 The surface tension of the metal salt ink is not particularly limited, and is preferably 20 mN/m to 45 mN/m, more preferably 25 mN/m to 35 mN/m. Surface tension is a value measured at 25°C using a surface tensiometer.

 金属塩インクの表面張力は、例えば、DY-700(協和界面科学社製)を用いて測定される。  The surface tension of the metal salt ink is measured using, for example, DY-700 (manufactured by Kyowa Interface Science Co., Ltd.).

 電磁波シールド層形成用インクは、金属錯体又は金属塩を含むことが好ましい。
 金属錯体は、アンモニウムカルバメート系化合物、アンモニウムカーボネート系化合物、アミン、及び炭素数8~20のカルボン酸からなる群より選択される少なくとも1種に由来する構造を有する金属錯体であることが好ましい。
 金属塩は、金属カルボン酸塩であることが好ましい。
The ink for forming an electromagnetic wave shielding layer preferably contains a metal complex or a metal salt.
The metal complex is preferably a metal complex having a structure derived from at least one selected from the group consisting of ammonium carbamate compounds, ammonium carbonate compounds, amines and carboxylic acids having 8 to 20 carbon atoms.
Preferably, the metal salt is a metal carboxylate.

<電磁波シールド層の形成方法>
 第2工程では、電子基板上のグランド領域内に、電磁波シールド層形成用インクを付与し、電子部品の天面上に付与された電磁波シールド層形成用インクに対して風を吹き付け、風が吹き付けられた電磁波シールド層形成用インクを加熱(例えば後述の焼成)及び/又は紫外線照射によって固化させることにより、電磁波シールド層を形成することが好ましい。
<Method for Forming Electromagnetic Shield Layer>
In the second step, the ink for forming the electromagnetic wave shielding layer is applied to the ground area on the electronic substrate, the wind is blown against the ink for forming the electromagnetic wave shielding layer applied to the top surface of the electronic component, and the wind is blown. It is preferable to form the electromagnetic wave shield layer by solidifying the electromagnetic wave shield layer forming ink by heating (for example, baking described later) and/or ultraviolet irradiation.

 ここでいうインクを固化させる紫外線照射のことを、本開示では「本露光」と称することがある。 The ultraviolet irradiation for solidifying the ink referred to here is sometimes referred to as "main exposure" in the present disclosure.

 第2工程では、加熱及び/又は本露光による固化とは別に、電子部品の天面上のインクに対する風の吹き付けの前及び後に少なくとも一方のタイミングで、前述したピニング露光を実施してもよい。 In the second step, apart from the solidification by heating and/or main exposure, the above-described pinning exposure may be performed at least one of before and after blowing air onto the ink on the top surface of the electronic component.

(電磁波シールド層形成用インクの付与方式)
 電磁波シールド層形成用インクの付与方式としては、インクジェット記録方式、ディスペンサー方式、又はスプレー方式が好ましく、インクジェット記録方式が特に好ましい。
 インクジェット記録方式の好ましい態様については、「膜の形成工程」の項で説明したとおりである。
(Applying method of ink for forming electromagnetic wave shield layer)
As a method for applying the ink for forming the electromagnetic wave shielding layer, an inkjet recording method, a dispenser method, or a spray method is preferable, and an inkjet recording method is particularly preferable.
Preferred aspects of the inkjet recording method are as described in the section "Film Forming Process".

 電磁波シールド層形成用インクを付与する際の電子基板の温度は、20℃~120℃で
あることが好ましく、28℃~80℃であることがより好ましい。
The temperature of the electronic substrate when applying the electromagnetic wave shielding layer forming ink is preferably 20°C to 120°C, more preferably 28°C to 80°C.

 電磁波シールド層全体の厚さは、電磁波シールド性の観点から、0.1μm~30μmであることが好ましく、0.3μm~15μmであることがより好ましい。 The thickness of the entire electromagnetic shield layer is preferably 0.1 μm to 30 μm, more preferably 0.3 μm to 15 μm, from the viewpoint of electromagnetic shielding properties.

 電磁波シールド層全体の厚さは、レーザ顕微鏡(製品名「VK-X1000」、キーエンス社製)を用いて測定される。 The thickness of the entire electromagnetic shield layer is measured using a laser microscope (product name "VK-X1000", manufactured by Keyence Corporation).

 電磁波シールド層1層当たりの平均厚さは、電磁波シールド層全体の厚さを、電磁波シールド層の形成回数(すなわち、電磁波シールド層形成用インクの付与回数)で除することによって得られる。 The average thickness per electromagnetic shield layer is obtained by dividing the thickness of the entire electromagnetic shield layer by the number of times the electromagnetic shield layer is formed (that is, the number of times the ink for forming the electromagnetic shield layer is applied).

 第2工程では、電磁波シールド層1層当たりの平均厚さを1.5μm以下とすることが好ましく、1.2μm以下とすることがより好ましい。 In the second step, the average thickness per electromagnetic wave shield layer is preferably 1.5 μm or less, more preferably 1.2 μm or less.

 電磁波シールド層1層当たりの平均厚さを1.5μm以下とすると、電磁波シールド性がより向上する。 When the average thickness of each electromagnetic shielding layer is 1.5 μm or less, the electromagnetic shielding properties are further improved.

(焼成工程)
 第2工程は、電子基板上に付与された電磁波シールド層形成用インクを焼成することにより、電磁波シールド層形成用インクを固化させて電磁波シールド層を形成する焼成工程を含んでいてもよい。
(Baking process)
The second step may include a baking step of baking the electromagnetic shielding layer forming ink applied on the electronic substrate to solidify the electromagnetic shielding layer forming ink to form the electromagnetic shielding layer.

 焼成温度は、250℃以下であることが好ましく、50℃~200℃であることがより好ましく、60℃~180℃であることがさらに好ましい。
 また、焼成時間は、1分~120分であることが好ましく、1分~40分であることがより好ましい。
 焼成温度及び焼成時間が上記範囲であると、熱による基材変形等の影響を小さくすることが可能である。
The firing temperature is preferably 250°C or less, more preferably 50°C to 200°C, and even more preferably 60°C to 180°C.
The firing time is preferably 1 minute to 120 minutes, more preferably 1 minute to 40 minutes.
When the firing temperature and the firing time are within the above ranges, it is possible to reduce the influence of thermal deformation of the base material.

<絶縁層形成用インク>
 絶縁層形成用インク(例えば絶縁性保護層形成用インク)は、活性エネルギー線硬化型インクであることが好ましい。
 活性エネルギー線硬化型インクである絶縁層形成用インクは、好ましくは、重合性モノマー及び重合開始剤を含む。
<Insulation layer forming ink>
The insulating layer-forming ink (for example, the insulating protective layer-forming ink) is preferably active energy ray-curable ink.
The insulating layer-forming ink, which is active energy ray-curable ink, preferably contains a polymerizable monomer and a polymerization initiator.

(重合性モノマー)
 重合性モノマーとは、1分子中に少なくとも1つの重合性基を有するモノマーのことをいう。重合性モノマーにおける重合性基は、カチオン重合性基であっても、ラジカル重合性基であってもよいが、硬化性の観点から、ラジカル重合性基であることが好ましい。また、ラジカル重合性基は、硬化性の観点から、エチレン性不飽和基であることが好ましい。
(Polymerizable monomer)
A polymerizable monomer refers to a monomer having at least one polymerizable group in one molecule. The polymerizable group in the polymerizable monomer may be a cationically polymerizable group or a radically polymerizable group, but is preferably a radically polymerizable group from the viewpoint of curability. Moreover, the radically polymerizable group is preferably an ethylenically unsaturated group from the viewpoint of curability.

 本開示において、モノマーとは、分子量が1000以下である化合物のことをいう。分子量は、化合物を構成する原子の種類及び数より算出することができる。 In the present disclosure, a monomer refers to a compound having a molecular weight of 1000 or less. The molecular weight can be calculated from the type and number of atoms that constitute the compound.

 重合性モノマーは、重合性基を1つ有する単官能重合性モノマーであってもよく、重合性基を2つ以上有する多官能重合性モノマーであってもよい。 The polymerizable monomer may be a monofunctional polymerizable monomer having one polymerizable group, or may be a polyfunctional polymerizable monomer having two or more polymerizable groups.

 単官能重合性モノマーは、重合性基を1つ有するモノマーであれば特に限定されない。
単官能重合性モノマーは、硬化性の観点から、単官能のラジカル重合性モノマーであることが好ましく、単官能エチレン性不飽和モノマーであることがより好ましい。
The monofunctional polymerizable monomer is not particularly limited as long as it is a monomer having one polymerizable group.
From the viewpoint of curability, the monofunctional polymerizable monomer is preferably a monofunctional radically polymerizable monomer, more preferably a monofunctional ethylenically unsaturated monomer.

 単官能エチレン性不飽和モノマーとしては、例えば、単官能(メタ)アクリレート、単官能(メタ)アクリルアミド、単官能芳香族ビニル化合物、単官能ビニルエーテル及び単官能N-ビニル化合物が挙げられる。 Examples of monofunctional ethylenically unsaturated monomers include monofunctional (meth)acrylates, monofunctional (meth)acrylamides, monofunctional aromatic vinyl compounds, monofunctional vinyl ethers and monofunctional N-vinyl compounds.

 単官能(メタ)アクリレートとしては、例えば、メチル(メタ)アクリレート、エチル(メタ)アクリレート、プロピル(メタ)アクリレート、n-ブチル(メタ)アクリレート、ヘキシル(メタ)アクリレート、2-エチルヘキシル(メタ)アクリレート、tert-オクチル(メタ)アクリレート、イソアミル(メタ)アクリレート、デシル(メタ)アクリレート、イソデシル(メタ)アクリレート、ラウリル(メタ)アクリレート、ステアリル(メタ)アクリレート、イソステアリル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、4-n-ブチルシクロヘキシル(メタ)アクリレート、4-tert-ブチルシクロヘキシル(メタ)アクリレート、ボルニル(メタ)アクリレート、イソボルニル(メタ)アクリレート、2-エチルヘキシルジグリコール(メタ)アクリレート、ブトキシエチル(メタ)アクリレート、2-クロロエチル(メタ)アクリレート、4-ブロモブチル(メタ)アクリレート、シアノエチル(メタ)アクリレート、ベンジル(メタ)アクリレート、ブトキシメチル(メタ)アクリレート、3-メトキシブチル(メタ)アクリレート、2-(2-メトキシエトキシ)エチル(メタ)アクリレート、2-(2-ブトキシエトキシ)エチル(メタ)アクリレート、2,2,2-テトラフルオロエチル(メタ)アクリレート、1H,1H,2H,2H-パーフルオロデシル(メタ)アクリレート、4-ブチルフェニル(メタ)アクリレート、フェニル(メタ)アクリレート、2,4,5-テトラメチルフェニル(メタ)アクリレート、4-クロロフェニル(メタ)アクリレート、2-フェノキシメチル(メタ)アクリレート、2-フェノキシエチル(メタ)アクリレート、グリシジル(メタ)アクリレート、グリシジルオキシブチル(メタ)アクリレート、グリシジルオキシエチル(メタ)アクリレート、グリシジルオキシプロピル(メタ)アクリレート、テトラヒドロフルフリル(メタ)アクリレート、2-ヒドロキシエチル(メタ)アクリレート、3-ヒドロキシプロピル(メタ)アクリレート、2-ヒドロキシプロピル(メタ)アクリレート、2-ヒドロキシブチル(メタ)アクリレート、3-ヒドロキシブチル(メタ)アクリレート、4-ヒドロキシブチル(メタ)アクリレート、環状トリメチロールプロパンホルマール(メタ)アクリレート、フェニルグリシジルエーテル(メタ)アクリレート、ジメチルアミノエチル(メタ)アクリレート、ジエチルアミノエチル(メタ)アクリレート、ジメチルアミノプロピル(メタ)アクリレート、ジエチルアミノプロピル(メタ)アクリレート、トリメトキシシリルプロピル(メタ)アクリレート、トリメチルシリルプロピル(メタ)アクリレート、ポリエチレンオキシドモノメチルエーテル(メタ)アクリレート、ポリエチレンオキシド(メタ)アクリレート、ポリエチレンオキシドモノアルキルエーテル(メタ)アクリレート、ジプロピレングリコール(メタ)アクリレート、ポリプロピレンオキシドモノアルキルエーテル(メタ)アクリレート、2-メタクリロイルオキシエチルコハク酸、2-メタクリロイルオキシヘキサヒドロフタル酸、2-メタクリロイルオキシエチル-2-ヒドロキシプロピルフタレート、エトキシジエチレングリコール(メタ)アクリレート、ブトキシジエチレングリコール(メタ)アクリレート、トリフルオロエチル(メタ)アクリレート、パーフルオロオクチルエチル(メタ)アクリレート、2-ヒドロキシ-3-フェノキシプロピル(メタ)アクリレート、エチレンオキシド(EO)変性フェノール(メタ)アクリレート、EO変性クレゾール(メタ)アクリレート、EO変性ノニルフェノール(メタ)アクリレート、プロピレンオキシド(PO)変性ノニルフェノール(メタ)アクリレート、EO変性-2-エチルヘキシル(メタ)アクリレート、ジシクロペンテニル(メタ)アクリレート、ジシクロペンテニルオキシエチル(メタ)アクリレート、ジシクロペンタニル(メタ)アクリレート、(3-エチル-3-オキセタニルメチル)(メタ)アクリレート、フェノキシエチレングリ
コール(メタ)アクリレート、2-カルボキシエチル(メタ)アクリレート、及び2-(メタ)アクリロイルオキシエチルサクシネートが挙げられる。
Examples of monofunctional (meth)acrylates include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, n-butyl (meth)acrylate, hexyl (meth)acrylate, and 2-ethylhexyl (meth)acrylate. , tert-octyl (meth)acrylate, isoamyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, lauryl (meth)acrylate, stearyl (meth)acrylate, isostearyl (meth)acrylate, cyclohexyl (meth)acrylate acrylate, 4-n-butylcyclohexyl (meth)acrylate, 4-tert-butylcyclohexyl (meth)acrylate, bornyl (meth)acrylate, isobornyl (meth)acrylate, 2-ethylhexyl diglycol (meth)acrylate, butoxyethyl (meth)acrylate ) acrylate, 2-chloroethyl (meth) acrylate, 4-bromobutyl (meth) acrylate, cyanoethyl (meth) acrylate, benzyl (meth) acrylate, butoxymethyl (meth) acrylate, 3-methoxybutyl (meth) acrylate, 2-( 2-Methoxyethoxy)ethyl (meth)acrylate, 2-(2-butoxyethoxy)ethyl (meth)acrylate, 2,2,2-tetrafluoroethyl (meth)acrylate, 1H,1H,2H,2H-perfluorodecyl (meth)acrylate, 4-butylphenyl (meth)acrylate, phenyl (meth)acrylate, 2,4,5-tetramethylphenyl (meth)acrylate, 4-chlorophenyl (meth)acrylate, 2-phenoxymethyl (meth)acrylate , 2-phenoxyethyl (meth) acrylate, glycidyl (meth) acrylate, glycidyloxybutyl (meth) acrylate, glycidyloxyethyl (meth) acrylate, glycidyloxypropyl (meth) acrylate, tetrahydrofurfuryl (meth) acrylate, 2- Hydroxyethyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylates, cyclic trimethylolpropane formal (meth)acrylate, phenylglycidyl ether (meth)acrylate, dimethylaminoethyl (meth)acrylate, diethylaminoethyl (meth)acrylate, dimethylaminopropyl (meth)acrylate, diethylaminopropyl (meth)acrylate, trimethoxysilylpropyl (meth)acrylate, trimethylsilylpropyl (meth)acrylate, polyethylene oxide monomethyl ether (meth)acrylate, polyethylene oxide (meth)acrylate, polyethylene oxide monoalkyl ether (meth)acrylate, dipropylene glycol (meth)acrylate, polypropylene oxide monoalkyl ether (meth)acrylate, 2-methacryloyloxyethyl succinic acid, 2-methacryloyloxyhexahydrophthalic acid, 2-methacryloyloxyethyl-2-hydroxypropyl phthalate, ethoxydiethylene glycol (meth) acrylate, butoxydiethylene glycol (meth) ) acrylate, trifluoroethyl (meth) acrylate, perfluorooctylethyl (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, ethylene oxide (EO)-modified phenol (meth) acrylate, EO-modified cresol (meth) Acrylate, EO-modified nonylphenol (meth)acrylate, propylene oxide (PO)-modified nonylphenol (meth)acrylate, EO-modified 2-ethylhexyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentenyloxyethyl (meth)acrylate , dicyclopentanyl (meth)acrylate, (3-ethyl-3-oxetanylmethyl) (meth)acrylate, phenoxyethylene glycol (meth)acrylate, 2-carboxyethyl (meth)acrylate, and 2-(meth)acryloyloxy Ethyl succinate can be mentioned.

 中でも、耐熱性を向上させる観点から、単官能(メタ)アクリレートは、芳香環又は脂肪族環を有する単官能(メタ)アクリレートであることが好ましく、イソボルニル(メタ)アクリレート、4-tert-ブチルシクロヘキシル(メタ)アクリレート、ジシクロペンテニル(メタ)アクリレ-ト、又はジシクロペンタニル(メタ)アクリレ-トであることがさらに好ましい。 Among them, from the viewpoint of improving heat resistance, the monofunctional (meth)acrylate is preferably a monofunctional (meth)acrylate having an aromatic ring or an aliphatic ring, such as isobornyl (meth)acrylate, 4-tert-butylcyclohexyl (Meth)acrylate, dicyclopentenyl (meth)acrylate, or dicyclopentanyl (meth)acrylate is more preferable.

 単官能(メタ)アクリルアミドとしては、例えば、(メタ)アクリルアミド、N-メチル(メタ)アクリルアミド、N-エチル(メタ)アクリルアミド、N-プロピル(メタ)アクリルアミド、N-n-ブチル(メタ)アクリルアミド、N-t-ブチル(メタ)アクリルアミド、N-ブトキシメチル(メタ)アクリルアミド、N-イソプロピル(メタ)アクリルアミド、N-メチロール(メタ)アクリルアミド、N,N-ジメチル(メタ)アクリルアミド、N,N-ジエチル(メタ)アクリルアミド及び(メタ)アクリロイルモルフォリンが挙げられる。 Examples of monofunctional (meth)acrylamides include (meth)acrylamide, N-methyl(meth)acrylamide, N-ethyl(meth)acrylamide, N-propyl(meth)acrylamide, Nn-butyl(meth)acrylamide, Nt-butyl (meth)acrylamide, N-butoxymethyl (meth)acrylamide, N-isopropyl (meth)acrylamide, N-methylol (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N,N-diethyl (meth)acrylamide and (meth)acryloylmorpholine.

 単官能芳香族ビニル化合物としては、例えば、スチレン、ジメチルスチレン、トリメチルスチレン、イソプロピルスチレン、クロロメチルスチレン、メトキシスチレン、アセトキシスチレン、クロロスチレン、ジクロロスチレン、ブロモスチレン、ビニル安息香酸メチルエステル、3-メチルスチレン、4-メチルスチレン、3-エチルスチレン、4-エチルスチレン、3-プロピルスチレン、4-プロピルスチレン、3-ブチルスチレン、4-ブチルスチレン、3-ヘキシルスチレン、4-ヘキシルスチレン、3-オクチルスチレン、4-オクチルスチレン、3-(2-エチルヘキシル)スチレン、4-(2-エチルヘキシル)スチレン、アリルスチレン、イソプロペニルスチレン、ブテニルスチレン、オクテニルスチレン、4-t-ブトキシカルボニルスチレン及び4-t-ブトキシスチレンが挙げられる。 Examples of monofunctional aromatic vinyl compounds include styrene, dimethylstyrene, trimethylstyrene, isopropylstyrene, chloromethylstyrene, methoxystyrene, acetoxystyrene, chlorostyrene, dichlorostyrene, bromostyrene, vinylbenzoic acid methyl ester, 3-methyl Styrene, 4-methylstyrene, 3-ethylstyrene, 4-ethylstyrene, 3-propylstyrene, 4-propylstyrene, 3-butylstyrene, 4-butylstyrene, 3-hexylstyrene, 4-hexylstyrene, 3-octyl Styrene, 4-octylstyrene, 3-(2-ethylhexyl)styrene, 4-(2-ethylhexyl)styrene, allylstyrene, isopropenylstyrene, butenylstyrene, octenylstyrene, 4-t-butoxycarbonylstyrene and 4- t-butoxystyrene can be mentioned.

 単官能ビニルエーテルとしては、例えば、メチルビニルエーテル、エチルビニルエーテル、プロピルビニルエーテル、n-ブチルビニルエーテル、t-ブチルビニルエーテル、2-エチルヘキシルビニルエーテル、n-ノニルビニルエーテル、ラウリルビニルエーテル、シクロヘキシルビニルエーテル、シクロヘキシルメチルビニルエーテル、4-メチルシクロヘキシルメチルビニルエーテル、ベンジルビニルエーテル、ジシクロペンテニルビニルエーテル、2-ジシクロペンテノキシエチルビニルエーテル、メトキシエチルビニルエーテル、エトキシエチルビニルエーテル、ブトキシエチルビニルエーテル、メトキシエトキシエチルビニルエーテル、エトキシエトキシエチルビニルエーテル、メトキシポリエチレングリコールビニルエーテル、テトラヒドロフルフリルビニルエーテル、2-ヒドロキシエチルビニルエーテル、2-ヒドロキシプロピルビニルエーテル、4-ヒドロキシブチルビニルエーテル、4-ヒドロキシメチルシクロヘキシルメチルビニルエーテル、ジエチレングリコールモノビニルエーテル、ポリエチレングリコールビニルエーテル、クロルエチルビニルエーテル、クロルブチルビニルエーテル、クロルエトキシエチルビニルエーテル、フェニルエチルビニルエーテル及びフェノキシポリエチレングリコールビニルエーテルが挙げられる。 Monofunctional vinyl ethers include, for example, methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether, n-butyl vinyl ether, t-butyl vinyl ether, 2-ethylhexyl vinyl ether, n-nonyl vinyl ether, lauryl vinyl ether, cyclohexyl vinyl ether, cyclohexylmethyl vinyl ether, 4-methyl Cyclohexyl methyl vinyl ether, benzyl vinyl ether, dicyclopentenyl vinyl ether, 2-dicyclopentenoxyethyl vinyl ether, methoxyethyl vinyl ether, ethoxyethyl vinyl ether, butoxyethyl vinyl ether, methoxyethoxyethyl vinyl ether, ethoxyethoxyethyl vinyl ether, methoxypolyethylene glycol vinyl ether, tetrahydro Furfuryl vinyl ether, 2-hydroxyethyl vinyl ether, 2-hydroxypropyl vinyl ether, 4-hydroxybutyl vinyl ether, 4-hydroxymethylcyclohexylmethyl vinyl ether, diethylene glycol monovinyl ether, polyethylene glycol vinyl ether, chloroethyl vinyl ether, chlorobutyl vinyl ether, chloroethoxyethyl vinyl ether , phenylethyl vinyl ether and phenoxypolyethylene glycol vinyl ether.

 単官能N-ビニル化合物としては、例えば、N-ビニル-ε-カプロラクタム及びN-ビニルピロリドンが挙げられる。 Examples of monofunctional N-vinyl compounds include N-vinyl-ε-caprolactam and N-vinylpyrrolidone.

 多官能重合性モノマーは、重合性基を2つ以上有するモノマーであれば特に限定されない。多官能重合性モノマーは、硬化性の観点から、多官能のラジカル重合性モノマーであることが好ましく、多官能エチレン性不飽和モノマーであることがより好ましい。 The polyfunctional polymerizable monomer is not particularly limited as long as it has two or more polymerizable groups. From the viewpoint of curability, the polyfunctional polymerizable monomer is preferably a polyfunctional radically polymerizable monomer, more preferably a polyfunctional ethylenically unsaturated monomer.

 多官能エチレン性不飽和モノマーとしては、例えば、多官能(メタ)アクリレート化合物及び多官能ビニルエーテルが挙げられる。 Examples of polyfunctional ethylenically unsaturated monomers include polyfunctional (meth)acrylate compounds and polyfunctional vinyl ethers.

 多官能(メタ)アクリレートとしては、例えば、エチレングリコールジ(メタ)アクリレート、ジエチレングリコールジ(メタ)アクリレート、トリエチレングリコールジ(メタ)アクリレート、ポリエチレングリコールジ(メタ)アクリレート、プロピレングリコールジ(メタ)アクリレート、ジプロピレングリコールジ(メタ)アクリレート、トリプロピレングリコールジ(メタ)アクリレート、ポリプロピレングリコールジ(メタ)アクリレート、ブチレングリコールジ(メタ)アクリレート、テトラエチレングリコールジ(メタ)アクリレート、ネオペンチルグリコールジ(メタ)アクリレート、3-メチル-1,5-ペンタンジオールジ(メタ)アクリレート、1,4-ブタンジオールジ(メタ)アクリレート、1,6-ヘキサンジオールジ(メタ)アクリレート、ヘプタンジオールジ(メタ)アクリレート、EO変性ネオペンチルグリコールジ(メタ)アクリレート、PO変性ネオペンチルグリコールジ(メタ)アクリレート、EO変性ヘキサンジオールジ(メタ)アクリレート、PO変性ヘキサンジオールジ(メタ)アクリレート、オクタンジオールジ(メタ)アクリレート、ノナンジオールジ(メタ)アクリレート、デカンジオールジ(メタ)アクリレート、ドデカンジオールジ(メタ)アクリレート、グリセリンジ(メタ)アクリレート、ペンタエリスリトールジ(メタ)アクリレート、エチレングリコールジグリシジルエーテルジ(メタ)アクリレート、ジエチレングリコールジグリシジルエーテルジ(メタ)アクリレート、トリシクロデカンジメタノールジ(メタ)アクリレート、トリメチロールエタントリ(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、トリメチロールプロパンEO付加トリ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、トリ(メタ)アクリロイルオキシエトキシトリメチロールプロパン、グリセリンポリグリシジルエーテルポリ(メタ)アクリレート及びトリス(2-アクリロイルオキシエチル)イソシアヌレートが挙げられる。 Examples of polyfunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, and propylene glycol di(meth)acrylate. , dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, butylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate ) acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, heptanediol di(meth)acrylate , EO-modified neopentyl glycol di(meth)acrylate, PO-modified neopentyl glycol di(meth)acrylate, EO-modified hexanediol di(meth)acrylate, PO-modified hexanediol di(meth)acrylate, octanediol di(meth)acrylate , nonanediol di(meth)acrylate, decanediol di(meth)acrylate, dodecanediol di(meth)acrylate, glycerin di(meth)acrylate, pentaerythritol di(meth)acrylate, ethylene glycol diglycidyl ether di(meth)acrylate , diethylene glycol diglycidyl ether di(meth)acrylate, tricyclodecanedimethanol di(meth)acrylate, trimethylolethane tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, trimethylolpropane EO addition tri(meth)acrylate , pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tri(meth)acryloyloxy ethoxytrimethylolpropane, glycerin polyglycidyl ether poly(meth)acrylate and tris(2-acryloyloxyethyl)isocyanurate.

 多官能ビニルエーテルとしては、例えば、1,4-ブタンジオールジビニルエーテル、エチレングリコールジビニルエーテル、ジエチレングリコールジビニルエーテル、トリエチレングリコールジビニルエーテル、ポリエチレングリコールジビニルエーテル、プロピレングリコールジビニルエーテル、ブチレングリコールジビニルエーテル、ヘキサンジオールジビニルエーテル、1,4-シクロヘキサンジメタノールジビニルエーテル、ビスフェノールAアルキレンオキシドジビニルエーテル、ビスフェノールFアルキレンオキシドジビニルエーテル、トリメチロールエタントリビニルエーテル、トリメチロールプロパントリビニルエーテル、ジトリメチロールプロパンテトラビニルエーテル、グリセリントリビニルエーテル、ペンタエリスリトールテトラビニルエーテル、ジペンタエリスリトールペンタビニルエーテル、ジペンタエリスリトールヘキサビニルエーテル、EO付加トリメチロールプロパントリビニルエーテル、PO付加トリメチロールプロパントリビニルエーテル、EO付加ジトリメチロールプロパンテトラビニルエーテル、PO付加ジトリメチロールプロパンテトラビニルエーテル、EO付加ペンタエリスリトールテトラビニルエーテル、PO付加ペンタエリスリトールテトラビニルエーテル、EO付加ジペンタエリスリトールヘキサビニルエーテル及びPO付加ジペンタエリスリトールヘキサビニルエーテルが挙げられる。 Polyfunctional vinyl ethers include, for example, 1,4-butanediol divinyl ether, ethylene glycol divinyl ether, diethylene glycol divinyl ether, triethylene glycol divinyl ether, polyethylene glycol divinyl ether, propylene glycol divinyl ether, butylene glycol divinyl ether, hexanediol divinyl ether, Vinyl ether, 1,4-cyclohexanedimethanol divinyl ether, bisphenol A alkylene oxide divinyl ether, bisphenol F alkylene oxide divinyl ether, trimethylolethane trivinyl ether, trimethylolpropane trivinyl ether, ditrimethylolpropane tetravinyl ether, glycerin trivinyl ether, pentaerythritol Tetravinyl ether, dipentaerythritol pentavinyl ether, dipentaerythritol hexavinyl ether, EO-added trimethylolpropane trivinyl ether, PO-added trimethylolpropane trivinyl ether, EO-added ditrimethylolpropane tetravinyl ether, PO-added ditrimethylolpropane tetravinyl ether, EO-added penta Erythritol tetravinyl ether, PO-added pentaerythritol tetravinyl ether, EO-added dipentaerythritol hexavinyl ether and PO-added dipentaerythritol hexavinyl ether can be mentioned.

 中でも、硬化性の観点から、多官能重合性モノマーは、(メタ)アクリロイル基以外の部分の炭素数が3~11のモノマーであることが好ましい。(メタ)アクリロイル基以外の部分の炭素数が3~11のモノマーとして、具体的には、1,6-ヘキサンジオールジ
(メタ)アクリレート、ジプロピレングリコールジ(メタ)アクリレート、PO変性ネオペンチルグリコールジ(メタ)アクリレート、1,4-ブタンジオールジ(メタ)アクリレート、3-メチル-1,5-ペンタンジオールジ(メタ)アクリレート、ポリエチレングリコールジ(メタ)アクリレート(EO鎖 n=4)、又は1,10-デカンジオール
ジ(メタ)アクリレートであることがより好ましい。
Among them, from the viewpoint of curability, the polyfunctional polymerizable monomer is preferably a monomer having 3 to 11 carbon atoms in the part other than the (meth)acryloyl group. Specific examples of the monomer having 3 to 11 carbon atoms in the portion other than the (meth)acryloyl group include 1,6-hexanediol di(meth)acrylate, dipropylene glycol di(meth)acrylate, and PO-modified neopentyl glycol. di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate (EO chain n=4), or 1,10-Decanediol di(meth)acrylate is more preferred.

 重合性モノマーの含有量は、絶縁性保護層形成用インクの全量に対して、10質量%~98質量%であることが好ましく、50質量%~98質量%であることがより好ましい。 The content of the polymerizable monomer is preferably 10% by mass to 98% by mass, more preferably 50% by mass to 98% by mass, relative to the total amount of the ink for forming the insulating protective layer.

(重合開始剤)
 絶縁層形成用インクに含まれる重合開始剤としては、例えば、オキシム化合物、アルキルフェノン化合物、アシルホスフィン化合物、芳香族オニウム塩化合物、有機過酸化物、チオ化合物、ヘキサアリールビスイミダゾール化合物、ボレート化合物、アジニウム化合物、チタノセン化合物、活性エステル化合物、炭素ハロゲン結合を有する化合物、及びアルキルアミンが挙げられる。
(Polymerization initiator)
Examples of the polymerization initiator contained in the insulating layer forming ink include oxime compounds, alkylphenone compounds, acylphosphine compounds, aromatic onium salt compounds, organic peroxides, thio compounds, hexaarylbisimidazole compounds, borate compounds, Examples include azinium compounds, titanocene compounds, active ester compounds, compounds having a carbon-halogen bond, and alkylamines.

 中でも、導電性をより向上させる観点から、絶縁層形成用インクに含まれる重合開始剤は、オキシム化合物、アルキルフェノン化合物、及びチタノセン化合物からなる群より選択される少なくとも1種であることが好ましく、アルキルフェノン化合物であることがより好ましく、α-アミノアルキルフェノン化合物及びベンジルケタールアルキルフェノンからなる群より選択される少なくとも1種であることがさらに好ましい。 Among them, from the viewpoint of further improving conductivity, the polymerization initiator contained in the insulating layer forming ink is preferably at least one selected from the group consisting of oxime compounds, alkylphenone compounds, and titanocene compounds. It is more preferably an alkylphenone compound, and more preferably at least one selected from the group consisting of α-aminoalkylphenone compounds and benzylketal alkylphenones.

 重合開始剤の含有量は、絶縁層形成用インクの全量に対して、0.5質量%~20質量%であることが好ましく、2質量%~10質量%であることがより好ましい。 The content of the polymerization initiator is preferably 0.5% by mass to 20% by mass, more preferably 2% by mass to 10% by mass, relative to the total amount of the insulating layer forming ink.

 絶縁性保護層形成用インクは、重合開始剤及び重合性モノマー以外の他の成分を含んでいてもよい。他の成分としては、連鎖移動剤、重合禁止剤、増感剤、界面活性剤及び添加剤が挙げられる。 The ink for forming the insulating protective layer may contain components other than the polymerization initiator and the polymerizable monomer. Other ingredients include chain transfer agents, polymerization inhibitors, sensitizers, surfactants and additives.

(連鎖移動剤)
 絶縁層形成用インクは、少なくとも1種の連鎖移動剤を含有してもよい。
 連鎖移動剤は、光重合反応の反応性を向上させる観点から、多官能チオールであることが好ましい。
(chain transfer agent)
The insulating layer forming ink may contain at least one chain transfer agent.
From the viewpoint of improving the reactivity of the photopolymerization reaction, the chain transfer agent is preferably a polyfunctional thiol.

 多官能性チオールとしては、例えば、ヘキサン-1,6-ジチオール、デカン-1,10-ジチオール、ジメルカプトジエチルエーテル、ジメルカプトジエチルスルフィド等の脂肪族チオール類、キシリレンジメルカプタン、4,4′-ジメルカプトジフェニルスルフィド、1,4-ベンゼンジチオール等の芳香族チオール類;
エチレングリコールビス(メルカプトアセテート)、ポリエチレングリコールビス(メルカプトアセテート)、プロピレングリコールビス(メルカプトアセテート)、グリセリントリス(メルカプトアセテート)、トリメチロールエタントリス(メルカプトアセテート)、トリメチロールプロパントリス(メルカプトアセテート)、ペンタエリスリトールテトラキス(メルカプトアセテート)、ジペンタエリスリトールヘキサキス(メルカプトアセテート)等の多価アルコールのポリ(メルカプトアセテート);
エチレングリコールビス(3-メルカプトプロピオネート)、ポリエチレングリコールビス(3-メルカプトプロピオネート)、プロピレングリコールビス(3-メルカプトプロピオネート)、グリセリントリス(3-メルカプトプロピオネート)、トリメチロールエタントリス(メルカプトプロピオネート)、トリメチロールプロパントリス(3-メルカプトプロピオネート)、ペンタエリスリトールテトラキス(3-メルカプトプロピオネート)、ジペンタエリスリトールヘキサキス(3-メルカプトプロピオネート)等の多価ア
ルコールのポリ(3-メルカプトプロピオネート);及び、
1,4-ビス(3-メルカプトブチリルオキシ)ブタン、1,3,5-トリス(3-メルカプトブチルオキシエチル)-1,3,5-トリアジン-2,4,6(1H,3H,5H)-トリオン、ペンタエリスリトールテトラキス(3-メルカプトブチレート)等のポリ(メルカプトブチレート)が挙げられる。
Examples of polyfunctional thiols include aliphatic thiols such as hexane-1,6-dithiol, decane-1,10-dithiol, dimercaptodiethyl ether, dimercaptodiethyl sulfide, xylylene dimercaptan, 4,4'- Aromatic thiols such as dimercaptodiphenyl sulfide and 1,4-benzenedithiol;
Ethylene Glycol Bis (Mercaptoacetate), Polyethylene Glycol Bis (Mercaptoacetate), Propylene Glycol Bis (Mercaptoacetate), Glycerin Tris (Mercaptoacetate), Trimethylolethane Tris (Mercaptoacetate), Trimethylolpropane Tris (Mercaptoacetate), Penta poly(mercaptoacetate) of polyhydric alcohols such as erythritol tetrakis (mercaptoacetate), dipentaerythritol hexakis (mercaptoacetate);
Ethylene glycol bis(3-mercaptopropionate), polyethylene glycol bis(3-mercaptopropionate), propylene glycol bis(3-mercaptopropionate), glycerol bis(3-mercaptopropionate), trimethylolethane Polyvalent tris (mercaptopropionate), trimethylolpropane tris (3-mercaptopropionate), pentaerythritol tetrakis (3-mercaptopropionate), dipentaerythritol hexakis (3-mercaptopropionate), etc. alcohol poly(3-mercaptopropionate); and
1,4-bis(3-mercaptobutyryloxy)butane, 1,3,5-tris(3-mercaptobutyloxyethyl)-1,3,5-triazine-2,4,6(1H,3H,5H )-trione, and poly(mercaptobutyrate) such as pentaerythritol tetrakis(3-mercaptobutyrate).

(重合禁止剤)
 絶縁層形成用インクは、少なくとも1種の重合禁止剤を含有してもよい。
 重合禁止剤としては、p-メトキシフェノール、キノン類(例えば、ハイドロキノン、ベンゾキノン、メトキシベンゾキノン等)、フェノチアジン、カテコール類、アルキルフェノール類(例えば、ジブチルヒドロキシトルエン(BHT)等)、アルキルビスフェノール類、ジメチルジチオカルバミン酸亜鉛、ジメチルジチオカルバミン酸銅、ジブチルジチオカルバミン酸銅、サリチル酸銅、チオジプロピオン酸エステル類、メルカプトベンズイミダゾール、ホスファイト類、2,2,6,6-テトラメチルピペリジン-1-オキシル(TEMPO)、2,2,6,6-テトラメチル-4-ヒドロキシピペリジン-1-オキシル(TEMPOL)、及びトリス(N-ニトロソ-N-フェニルヒドロキシルアミン)アルミニウム塩(別名:クペロンAl)が挙げられる。
(Polymerization inhibitor)
The insulating layer forming ink may contain at least one polymerization inhibitor.
Polymerization inhibitors include p-methoxyphenol, quinones (e.g., hydroquinone, benzoquinone, methoxybenzoquinone, etc.), phenothiazine, catechols, alkylphenols (e.g., dibutylhydroxytoluene (BHT), etc.), alkylbisphenols, dimethyldithiocarbamine. zinc acid, copper dimethyldithiocarbamate, copper dibutyldithiocarbamate, copper salicylate, thiodipropionates, mercaptobenzimidazole, phosphites, 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO), 2,2,6,6-tetramethyl-4-hydroxypiperidine-1-oxyl (TEMPOL), and tris(N-nitroso-N-phenylhydroxylamine) aluminum salt (also known as Cupferron Al).

 中でも、重合禁止剤は、p-メトキシフェノール、カテコール類、キノン類、アルキルフェノール類、TEMPO、TEMPOL、及びトリス(N-ニトロソ-N-フェニルヒドロキシルアミン)アルミニウム塩から選ばれる少なくとも1種が好ましく、p-メトキシフェノール、ハイドロキノン、ベンゾキノン、BHT、TEMPO、TEMPOL、及びトリス(N-ニトロソ-N-フェニルヒドロキシルアミン)アルミニウム塩から選ばれる少なくとも1種がより好ましい。 Among them, the polymerization inhibitor is preferably at least one selected from p-methoxyphenol, catechols, quinones, alkylphenols, TEMPO, TEMPOL, and tris(N-nitroso-N-phenylhydroxylamine) aluminum salt, and p -Methoxyphenol, hydroquinone, benzoquinone, BHT, TEMPO, TEMPOL, and tris(N-nitroso-N-phenylhydroxylamine) aluminum salt is more preferred.

 絶縁層形成用インクが重合禁止剤を含有する場合、重合禁止剤の含有量は、絶縁性保護層形成用インクの全量に対し、0.01質量%~2.0質量%が好ましく、0.02質量%~1.0質量%がより好ましく、0.03質量%~0.5質量%が特に好ましい。 When the insulating layer-forming ink contains a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01% by mass to 2.0% by mass, and 0.01% by mass to 2.0% by mass, based on the total amount of the insulating protective layer-forming ink. 02% by mass to 1.0% by mass is more preferred, and 0.03% by mass to 0.5% by mass is particularly preferred.

(増感剤)
 絶縁層形成用インクは、少なくとも1種の増感剤を含有してもよい。
(sensitizer)
The insulating layer forming ink may contain at least one sensitizer.

 増感剤として、例えば、多核芳香族化合物(例えば、ピレン、ペリレン、トリフェニレン、及び2-エチル-9,10-ジメトキシアントラセン)、キサンテン系化合物(例えば、フルオレッセイン、エオシン、エリスロシン、ローダミンB、及びローズベンガル)、シアニン系化合物(例えば、チアカルボシアニン及びオキサカルボシアニン)、メロシアニン系化合物(例えば、メロシアニン、及びカルボメロシアニン)、チアジン系化合物(例えば、チオニン、メチレンブルー、及びトルイジンブルー)、アクリジン系化合物(例えば、アクリジンオレンジ、クロロフラビン、及びアクリフラビン)、アントラキノン類(例えば、アントラキノン)、スクアリウム系化合物(例えば、スクアリウム)、クマリン系化合物(例えば、7-ジエチルアミノ-4-メチルクマリン)、チオキサントン系化合物(例えば、イソプロピルチオキサントン)、及びチオクロマノン系化合物(例えば、チオクロマノン)が挙げられる。中でも、増感剤は、チオキサントン系化合物であることが好ましい。 Examples of sensitizers include polynuclear aromatic compounds (e.g., pyrene, perylene, triphenylene, and 2-ethyl-9,10-dimethoxyanthracene), xanthene compounds (e.g., fluorescein, eosin, erythrosine, rhodamine B, and Rose Bengal), cyanine compounds (e.g., thiacarbocyanine and oxacarbocyanine), merocyanine compounds (e.g., merocyanine and carbomerocyanine), thiazine compounds (e.g., thionine, methylene blue, and toluidine blue), acridine compounds compounds (e.g., acridine orange, chloroflavin, and acriflavin), anthraquinones (e.g., anthraquinone), squalium compounds (e.g., squalium), coumarin compounds (e.g., 7-diethylamino-4-methylcoumarin), thioxanthone compounds (eg, isopropylthioxanthone), and thiochromanone-based compounds (eg, thiochromanone). Among them, the sensitizer is preferably a thioxanthone compound.

 絶縁層形成用インクが増感剤を含有する場合、増感剤の含有量は特に限定されないが、絶縁性保護層形成用インクの全量に対して、1.0質量%~15.0質量%であることが好ましく、1.5質量%~5.0質量%であることがより好ましい。 When the insulating layer-forming ink contains a sensitizer, the content of the sensitizer is not particularly limited, but is 1.0% by mass to 15.0% by mass with respect to the total amount of the insulating protective layer-forming ink. and more preferably 1.5% by mass to 5.0% by mass.

(界面活性剤)
 絶縁層形成用インクは、少なくとも1種の界面活性剤を含有してもよい。
(Surfactant)
The insulating layer forming ink may contain at least one surfactant.

 界面活性剤としては、特開昭62-173463号公報、及び特開昭62-183457号公報に記載されたものが挙げられる。また、界面活性剤としては、例えば、ジアルキルスルホコハク酸塩、アルキルナフタレンスルホン酸塩、脂肪酸塩等のアニオン性界面活性剤;ポリオキシエチレンアルキルエーテル、ポリオキシエチレンアルキルアリルエーテル、アセチレングリコール、ポリオキシエチレン・ポリオキシプロピレンブロックコポリマー等のノニオン性界面活性剤;及び、アルキルアミン塩、第四級アンモニウム塩等のカチオン性界面活性剤が挙げられる。また、界面活性剤は、フッ素系界面活性剤又はシリコーン系界面活性剤であってもよい。 Examples of surfactants include those described in JP-A-62-173463 and JP-A-62-183457. Examples of surfactants include anionic surfactants such as dialkylsulfosuccinates, alkylnaphthalenesulfonates, and fatty acid salts; polyoxyethylene alkyl ethers, polyoxyethylene alkyl allyl ethers, acetylene glycol, polyoxyethylene • Nonionic surfactants such as polyoxypropylene block copolymers; and cationic surfactants such as alkylamine salts and quaternary ammonium salts. Further, the surfactant may be a fluorosurfactant or a silicone surfactant.

 絶縁層形成用インクが界面活性剤を含有する場合、界面活性剤の含有量は、絶縁層形成用インクの全量に対して、0.5質量%以下であることが好ましく、0.1質量%以下であることがより好ましい。界面活性剤の含有量の下限値は特に限定されない。 When the insulating layer forming ink contains a surfactant, the content of the surfactant is preferably 0.5% by mass or less, more preferably 0.1% by mass, based on the total amount of the insulating layer forming ink. The following are more preferable. The lower limit of the surfactant content is not particularly limited.

 界面活性剤の含有量が0.5質量%以下であると、絶縁層形成用インクが付与された後に、絶縁層形成用インクが拡がりにくい。したがって、絶縁層形成用インクの流れ出しが抑制され、電磁波シールド性が向上する。 When the content of the surfactant is 0.5% by mass or less, the insulating layer forming ink is less likely to spread after the insulating layer forming ink is applied. Therefore, the outflow of the ink for forming the insulating layer is suppressed, and the electromagnetic wave shielding property is improved.

(有機溶剤)
 絶縁層形成用インクは、少なくとも1種の有機溶剤を含有してもよい。
(Organic solvent)
The insulating layer forming ink may contain at least one organic solvent.

 有機溶剤としては、例えば、エチレングリコールモノエチルエーテル、ジエチレングリコールモノエチルエーテル、トリエチレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテル(PGME)、ジプロピレングリコールモノメチルエーテル、トリプロピレングリコールモノメチルエーテル等の(ポリ)アルキレングリコールモノアルキルエーテル類;
エチレングリコールジブチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジプロピレングリコールジエチルエーテル、テトラエチレングリコールジメチルエーテル等の(ポリ)アルキレングリコールジアルキルエーテル類;
ジエチレングリコールアセテート等の(ポリ)アルキレングリコールアセテート類;
エチレングリコールジアセテート、プロピレングリコールジアセテート等の(ポリ)アルキレングリコールジアセテート類;
エチレングリコールモノブチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート等の(ポリ)アルキレングリコールモノアルキルエーテルアセテート類、メチルエチルケトン、シクロヘキサノン等のケトン類;
γ-ブチロラクトン等のラクトン類;
酢酸エチル、酢酸プロピル、酢酸ブチル、酢酸3-メトキシブチル(MBA)、プロピオン酸メチル、プロピオン酸エチル等のエステル類;
テトラヒドロフラン、ジオキサン等の環状エーテル類;及び
ジメチルホルムアミド、ジメチルアセトアミド等のアミド類が挙げられる。
Examples of organic solvents include (poly)alkylene glycols such as ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, triethylene glycol monomethyl ether, propylene glycol monomethyl ether (PGME), dipropylene glycol monomethyl ether, and tripropylene glycol monomethyl ether. monoalkyl ethers;
(poly)alkylene glycol dialkyl ethers such as ethylene glycol dibutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol diethyl ether, tetraethylene glycol dimethyl ether;
(poly)alkylene glycol acetates such as diethylene glycol acetate;
(poly)alkylene glycol diacetates such as ethylene glycol diacetate and propylene glycol diacetate;
(poly)alkylene glycol monoalkyl ether acetates such as ethylene glycol monobutyl ether acetate and propylene glycol monomethyl ether acetate; ketones such as methyl ethyl ketone and cyclohexanone;
Lactones such as γ-butyrolactone;
Esters such as ethyl acetate, propyl acetate, butyl acetate, 3-methoxybutyl acetate (MBA), methyl propionate, ethyl propionate;
cyclic ethers such as tetrahydrofuran and dioxane; and amides such as dimethylformamide and dimethylacetamide.

 絶縁層形成用インクが有機溶剤を含有する場合、有機溶剤の含有量は、絶縁層形成用インクの全量に対して、70質量%以下であることが好ましく、50質量%以下であることがより好ましい。有機溶剤の含有量の下限値は特に限定されない。 When the insulating layer forming ink contains an organic solvent, the content of the organic solvent is preferably 70% by mass or less, more preferably 50% by mass or less, relative to the total amount of the insulating layer forming ink. preferable. The lower limit of the content of the organic solvent is not particularly limited.

(添加剤)
 絶縁層形成用インクは、必要に応じて、共増感剤、紫外線吸収剤、酸化防止剤、褪色防止剤、塩基性化合物等の添加剤を含有してもよい。
(Additive)
The insulating layer-forming ink may contain additives such as a co-sensitizer, an ultraviolet absorber, an antioxidant, an anti-fading agent, and a basic compound, if necessary.

(物性)
 絶縁層形成用インクのpHは、インクジェット記録方式を用いて付与する場合に吐出安定性を向上させる観点から、7~10であることが好ましく、7.5~9.5であることがより好ましい。pHは、pH計を用いて25℃で測定され、例えば、東亜DKK社製のpHメーター(型番「HM-31」)を用いて測定される。
(physical properties)
The pH of the insulating layer-forming ink is preferably 7 to 10, more preferably 7.5 to 9.5, from the viewpoint of improving ejection stability when applied using an inkjet recording method. . The pH is measured at 25° C. using a pH meter, for example, using a pH meter manufactured by DKK Toa (model number “HM-31”).

 絶縁層形成用インクの粘度は、0.5mPa・s~60mPa・sであることが好ましく、2mPa・s~40mPa・sであることがより好ましい。粘度は、粘度計を用いて25℃で測定され、例えば、東機産業社製のTV-22型粘度計を用いて測定される。 The viscosity of the insulating layer forming ink is preferably 0.5 mPa·s to 60 mPa·s, more preferably 2 mPa·s to 40 mPa·s. Viscosity is measured at 25° C. using a viscometer, for example, using a TV-22 viscometer manufactured by Toki Sangyo Co., Ltd.

 絶縁層形成用インクの表面張力は、60mN/m以下であることが好ましく、20mN/m~50mN/mであることがより好ましく、25mN/m~45mN/mであることがさらに好ましい。表面張力は、表面張力計を用いて25℃で測定され、例えば、協和界面科学社製の自動表面張力計(製品名「CBVP-Z」)を用いて、プレート法によって測定される。 The surface tension of the insulating layer forming ink is preferably 60 mN/m or less, more preferably 20 mN/m to 50 mN/m, even more preferably 25 mN/m to 45 mN/m. The surface tension is measured at 25° C. using a surface tensiometer, for example, by a plate method using an automatic surface tensiometer manufactured by Kyowa Interface Science Co., Ltd. (product name “CBVP-Z”).

<絶縁性保護層の形成方法>
 第1工程では、好ましくは、電子基材上に、インクジェット記録方式、ディスペンサー塗布方法、又はスプレー塗布方法を用いて絶縁層形成用インクを付与し、電子部品の天面上に付与された絶縁層形成用インクに風を吹き付け、次に、風が吹き付けられた絶縁層形成用インクを硬化させて絶縁保護層を形成する。
<Method for forming insulating protective layer>
In the first step, preferably, an ink for forming an insulating layer is applied to the electronic base material using an inkjet recording method, a dispenser coating method, or a spray coating method, and the insulating layer provided on the top surface of the electronic component. Air is blown onto the forming ink, and then the blown insulating layer forming ink is cured to form an insulating protective layer.

 絶縁層形成用インクを付与する方法は、少量を打滴して1回の付与によって形成されるインク膜の厚さを薄くできる観点から、インクジェット記録方式であることが好ましい。インクジェット記録方式の詳細は前述のとおりである。 The method of applying the ink for forming the insulating layer is preferably an inkjet recording method from the viewpoint of reducing the thickness of the ink film formed by applying a small amount of droplets in one application. The details of the inkjet recording method are as described above.

 絶縁層形成用インクを硬化する方法は特に限定されないが、例えば、基材上に付与された絶縁層形成用インクに対して、活性エネルギー線を照射する方法(例えば本露光)が挙げられる。 The method of curing the insulating layer forming ink is not particularly limited, but for example, a method of irradiating the insulating layer forming ink applied on the substrate with an active energy ray (for example, main exposure) can be used.

 活性エネルギー線としては、例えば、紫外線、可視光線及び電子線が挙げられ、中でも紫外線(以下、「UV」ともいう)が好ましい。 Examples of active energy rays include ultraviolet rays, visible rays, and electron beams, and among them, ultraviolet rays (hereinafter also referred to as "UV") are preferred.

 紫外線のピーク波長は、200nm~405nmであることが好ましく、250nm~400nmであることがより好ましく、300nm~400nmであることがさらに好ましい。 The peak wavelength of ultraviolet rays is preferably 200 nm to 405 nm, more preferably 250 nm to 400 nm, even more preferably 300 nm to 400 nm.

 活性エネルギー線の照射における露光量は、100mJ/cm~5000mJ/cmであることが好ましく、300mJ/cm~1500mJ/cmであることがより好ましい。 The exposure dose in the irradiation of active energy rays is preferably 100 mJ/cm 2 to 5000 mJ/cm 2 and more preferably 300 mJ/cm 2 to 1500 mJ/cm 2 .

 紫外線照射用の光源としては、水銀ランプ、ガスレーザー及び固体レーザーが主に利用されており、水銀ランプ、メタルハライドランプ及び紫外線蛍光灯が広く知られている。また、UV-LED(発光ダイオード)及びUV-LD(レーザダイオード)は小型、高寿命、高効率、かつ、低コストであり、紫外線照射用の光源として期待されている。中でも、紫外線照射用の光源は、メタルハライドランプ、高圧水銀ランプ、中圧水銀ランプ、低圧水銀ランプ又はUV-LEDであることが好ましい。 Mercury lamps, gas lasers, and solid-state lasers are mainly used as light sources for ultraviolet irradiation, and mercury lamps, metal halide lamps, and ultraviolet fluorescent lamps are widely known. UV-LEDs (light-emitting diodes) and UV-LDs (laser diodes) are small, have a long life, are highly efficient, and are low-cost, and are expected to serve as light sources for ultraviolet irradiation. Among them, the light source for ultraviolet irradiation is preferably a metal halide lamp, a high-pressure mercury lamp, a medium-pressure mercury lamp, a low-pressure mercury lamp, or a UV-LED.

 絶縁性保護層を得る工程では、所望の厚さの絶縁性保護層を得るために、絶縁インクを
付与して、活性エネルギー線を照射する工程を2回以上繰り返すことが好ましい。
In the step of obtaining the insulating protective layer, it is preferable to repeat the steps of applying the insulating ink and irradiating the active energy ray two or more times in order to obtain the insulating protective layer with a desired thickness.

 絶縁性保護層の厚さは、5μm~5000μmであることが好ましく、10μm~2000μmであることがより好ましい。 The thickness of the insulating protective layer is preferably 5 μm to 5000 μm, more preferably 10 μm to 2000 μm.

 第1工程では、活性エネルギー線の照射(例えば本露光)とは別に、電子部品の天面上のインクに対する風の吹き付けの前及び後に少なくとも一方のタイミングで、前述したピニング露光を実施してもよい。
 
In the first step, apart from the irradiation of the active energy ray (for example, the main exposure), the above-described pinning exposure may be performed at least one of before and after the air blows to the ink on the top surface of the electronic component. good.

 以下、本開示の実施例を示すが、本開示は以下の実施例には限定されない。 Examples of the present disclosure are shown below, but the present disclosure is not limited to the following examples.

〔実施例1〕
<導電層形成用インクの調製>
 200mLの3口フラスコに、ネオデカン酸銀40gを加えた。次に、トリメチルベンゼン30.0g、及びテルピネオール30.0gを加え、撹拌し、銀塩を含む溶液を得た。この溶液を、孔径0.45μmのPTFE(ポリテトラフルオロエチレン)製メンブレンフィルターを使用してろ過し、導電層形成用インクを得た。
[Example 1]
<Preparation of Ink for Forming Conductive Layer>
40 g of silver neodecanoate was added to a 200 mL three-necked flask. Next, 30.0 g of trimethylbenzene and 30.0 g of terpineol were added and stirred to obtain a solution containing silver salt. This solution was filtered using a PTFE (polytetrafluoroethylene) membrane filter with a pore size of 0.45 μm to obtain an ink for forming a conductive layer.

<電子基板の準備>
 電子部品付きの配線基板を準備した。
 電子部品付きの配線基板において、配線基板と電子部品とは複数の半田ボールによって接続されており、電子部品と配線基板との間であって複数の半田ボール間に、微小な空隙が存在する。
 この空隙に、武蔵エンジニアリング社のディスペンサを用い、Zymet社のアンダフィル材料を充填し、その後、定温オーブンに20分静置することにより、上記空隙を埋めた。
 以上により、図15A及び図15Bに示した電子基板110と同様の構造を有する電子基板(即ち、段差付き基板としての電子基板)を準備した。
 準備した電子基板における各サイズは以下の通りである。
<Preparation of electronic board>
A wiring board with electronic components was prepared.
In a wiring board with an electronic component, the wiring board and the electronic component are connected by a plurality of solder balls, and minute gaps exist between the electronic component and the wiring board and between the plurality of solder balls.
This gap was filled with an underfill material from Zymet using a dispenser from Musashi Engineering, and then left to stand in a constant temperature oven for 20 minutes to fill the gap.
As described above, an electronic substrate having the same structure as the electronic substrate 110 shown in FIGS. 15A and 15B (that is, an electronic substrate as a stepped substrate) was prepared.
Each size in the prepared electronic substrate is as follows.

 グランド電極の幅:600μm
 グランド電極の高さ(配線基板上に突出した部分の高さ):25μm
 グランド電極で囲まれる領域(グランド領域):10.65mm×10.65mm
 電子部品のサイズ及び形状:10.00mm×10.00mmの矩形状
 電子部品の高さ(配線基板の表面から電子部品の天面までの高さ):500μm
 電子部品とグランド電極との距離:50μm
Width of ground electrode: 600 μm
Height of ground electrode (height of portion protruding above wiring board): 25 μm
Area surrounded by ground electrodes (ground area): 10.65 mm x 10.65 mm
Electronic component size and shape: 10.00 mm x 10.00 mm rectangular Height of electronic component (height from the surface of the wiring board to the top surface of the electronic component): 500 μm
Distance between electronic component and ground electrode: 50 μm

<導電層の形成>
 基板(例えば、上記電子基板)が載置されるステージと、
 ステージを搬送するための搬送機と、
 ステージの搬送方向に対してノズル列が直交するように配置された1200dpi(dot per inch)のインクジェットヘッドと、
 ドライヤーと、
 ピニング光源としての385nmLED光源(13W/cm、京セラ製)と、
を備える、シングルパス方式のインクジェット記録装置を準備した。
 ここで、インクジェット、ドライヤー、及びピニング光源は、ステージの搬送方向上流側からこの順に配置されている。
<Formation of conductive layer>
a stage on which a substrate (for example, the electronic substrate) is placed;
a transporter for transporting the stage;
a 1200 dpi (dot per inch) inkjet head arranged so that the nozzle rows are orthogonal to the transport direction of the stage;
a dryer and
a 385 nm LED light source (13 W/cm 2 , manufactured by Kyocera) as a pinning light source;
A single-pass inkjet recording apparatus was prepared.
Here, the inkjet, the dryer, and the pinning light source are arranged in this order from the upstream side in the transport direction of the stage.

 上記インクジェット記録装置におけるステージ上に電子基板を粘着テープで固定した。この際、電子基板は、電子基板における電子部品の4辺のうちの1辺と、インクジェットヘッドのノズル列と、が平行となる配置でステージ上に固定した。
 上記インクジェット記録装置に導電層形成用インクを搭載し、電子基板を搬送しながら、この電子基板上に導電層形成用インクを付与した。導電層形成用インクの付与において、相対移動方向に対して直交する方向の解像度(dpi)及び相対移動方向の解像度(dpi)は、それぞれ、表1に示す値となるように調整した。
 導電層形成用インクの付与領域は、電子部品上(10.00mm×10.00mmの矩形状領域)を含み、かつ、電子部品の4辺の各々から0.20mmずつはみ出す、10.40mm×10.40mmの矩形状の領域とした。
 以上の導電層形成用インクの付与を3回繰り返した。
An electronic substrate was fixed on the stage of the inkjet recording apparatus with an adhesive tape. At this time, the electronic board was fixed on the stage so that one of the four sides of the electronic component on the electronic board was parallel to the nozzle row of the inkjet head.
The ink for forming a conductive layer was mounted on the inkjet recording apparatus, and the ink for forming a conductive layer was applied onto the electronic substrate while the electronic substrate was being conveyed. In the application of the conductive layer forming ink, the resolution (dpi) in the direction perpendicular to the direction of relative movement and the resolution (dpi) in the direction of relative movement were adjusted to the values shown in Table 1, respectively.
The application area of the ink for forming the conductive layer is 10.40 mm x 10, including the electronic component (rectangular area of 10.00 mm x 10.00 mm) and protruding from each of the four sides of the electronic component by 0.20 mm. A rectangular area of 0.40 mm.
The application of the conductive layer forming ink described above was repeated three times.

 電子基板における電子部品の天面上に付与された導電層形成用インクに対し、ドライヤーを用い、温度23℃、風速3m/sの風を、以下に示す方向に吹き付けた。
 風を吹き付ける方向は、電子部品の天面上の中心の上方から、仰角が90°となる方向とした。
 導電層形成用インク付与終了から風の吹き付け開始までの時間は、0.44秒となるように調整した。
 次いで、風が吹き付けられたインクに対し、385nmLED光源(13W/cm、京セラ製)によってピニング露光を施した。ピニング露光の露光量は、5J/cmとした。
 導電層形成用インクに対する風の吹き付けの終了からピニング露光開始までの時間は、0.44秒となるように調整した。
A drier was used to blow air at a temperature of 23° C. and a wind speed of 3 m/s in the following directions to the conductive layer forming ink applied on the top surface of the electronic component of the electronic substrate.
The direction in which the air was blown was such that the elevation angle was 90° from above the center of the top surface of the electronic component.
The time from the end of application of the ink for forming the conductive layer to the start of air blowing was adjusted to be 0.44 seconds.
Then, pinning exposure was applied to the blown ink with a 385 nm LED light source (13 W/cm 2 , manufactured by Kyocera). The exposure amount of the pinning exposure was set to 5 J/cm 2 .
The time from the end of air blowing to the conductive layer forming ink to the start of pinning exposure was adjusted to 0.44 seconds.

 上記ピニング露光後、電子基板上に付与された導電層形成用インクを150℃で20分間加熱し(即ち、焼成し)、電磁波シールド層としての導電層を得た。
 以上により、実施例1の電子デバイスを得た。
After the pinning exposure, the conductive layer forming ink applied to the electronic substrate was heated (that is, baked) at 150° C. for 20 minutes to obtain a conductive layer as an electromagnetic wave shield layer.
As described above, an electronic device of Example 1 was obtained.

<評価>
 得られた電子デバイスについて、以下の評価を実施した。
 結果を表1に示す。
<Evaluation>
The following evaluations were carried out on the obtained electronic devices.
Table 1 shows the results.

(導電層の厚さ)
 電子デバイスの断面を撮影した光学顕微鏡写真に基づき、導電層の厚さを測定した。
 導電層の厚さとしては、
電子部材の天面上の導電層の厚さ、
電子部材の側面上の導電層の厚さ、及び、
電子部材の天面と側面との間の角部上の導電層の厚さ
をそれぞれ測定した。
 測定結果に基づき、厚さの平均値及び厚さのバラつきを求めた。
(thickness of conductive layer)
The thickness of the conductive layer was measured based on an optical micrograph taken of a cross section of the electronic device.
As the thickness of the conductive layer,
thickness of the conductive layer on the top surface of the electronic member,
The thickness of the conductive layer on the side surface of the electronic member, and
The thickness of the conductive layer on the corner between the top surface and the side surface of the electronic member was measured.
Based on the measurement results, the average thickness and thickness variation were obtained.

(導電層非形成領域へのインクの飛び散り)
 導電層非形成領域へのインクの飛び散りを以下のようにして評価した。
 光学顕微鏡(200倍)により、電子部品のエッジから所定の距離離れた場所を、各辺につき3か所観察し、導電インクの飛び散りの有無を確認した。
 得られた結果に基づき、下記評価基準に従って、導電層非形成領域へのインクの飛び散りを評価した。
 下記評価基準において、導電層非形成領域へのインクの飛び散り抑制性能に最も優れるランクは、「5」である。
(Ink splattering to conductive layer non-formation area)
Ink splattering to the conductive layer non-formed region was evaluated as follows.
Using an optical microscope (200x magnification), three locations on each side at a predetermined distance from the edge of the electronic component were observed to confirm the presence or absence of scattering of the conductive ink.
Based on the obtained results, ink splattering to the conductive layer non-formed region was evaluated according to the following evaluation criteria.
In the following evaluation criteria, "5" is the most excellent rank for suppressing ink splattering to the conductive layer non-formed region.

-導電層非形成領域へのインクの飛び散りの評価基準-
5:エッジから300μm以上500μm未満の領域に飛び散りが見られず、かつ、エッジから500μm以上の領域にも飛び散りが見られなかった。
4:エッジから300μm以上500μm未満の領域に飛び散りが見られたが、エッジから500μm以上の領域には飛び散りが見られなかった。
3:エッジから500μm以上600μm未満の領域に飛び散りが見られたが、エッジから600μm以上の領域には、飛び散りが見られなかった。
2:エッジから600μm以上1000μm未満のところに飛び散りは見られたが、エッジから1000μm以上の領域には飛び散りが見られなかった。
1:エッジから1000μm以上の領域に、飛び散りが見られた。
-Evaluation Criteria for Ink Spattering to Conductive Layer Non-Formed Area-
5: No splattering was observed in a region of 300 μm or more and less than 500 μm from the edge, and no splattering was observed in a region of 500 μm or more from the edge.
4: Splattering was observed in a region of 300 μm or more and less than 500 μm from the edge, but no splattering was observed in a region of 500 μm or more from the edge.
3: Splattering was observed in a region of 500 μm or more and less than 600 μm from the edge, but no splattering was observed in a region of 600 μm or more from the edge.
2: Splattering was observed at a distance of 600 μm or more and less than 1000 μm from the edge, but no scattering was observed at a region of 1000 μm or more from the edge.
1: Scattering was observed in a region of 1000 μm or more from the edge.

(電磁波シールド性能)
 WM7400(森田テック社製)を使用し、3GHzまでの範囲で漏洩電磁波を測定し、下記評価基準に従って、導電層(電磁波シールド層)の電磁波シールド性能を評価した。下記評価基準において、電磁波シールド性能に最も優れるランクは、「5」である。
(Electromagnetic shielding performance)
Using WM7400 (manufactured by Morita Tech Co., Ltd.), leaked electromagnetic waves were measured in the range up to 3 GHz, and the electromagnetic shielding performance of the conductive layer (electromagnetic shielding layer) was evaluated according to the following evaluation criteria. In the following evaluation criteria, "5" is the most excellent rank for electromagnetic wave shielding performance.

-電磁波シールド性能の評価基準-
5:20dB未満
4:20dB以上30dB未満
3:30dB以上50dB未満
2:50dB以上70dB未満
1:70dB以上
-Evaluation Criteria for Electromagnetic Shielding Performance-
5: Less than 20 dB 4: 20 dB or more and less than 30 dB 3: 30 dB or more and less than 50 dB 2: 50 dB or more and less than 70 dB 1: 70 dB or more

(導電層非形成領域へのインクの流れ出し量(μm))
 導電層非形成領域へのインクの流れ出し量(μm)を測定した。
(Amount of ink flowing out to conductive layer non-formed region (μm 3 ))
The amount (μm 3 ) of the ink flowed into the conductive layer non-formed region was measured.

〔実施例2〕
 導電層形成用インクの付与(3回)において、相対移動方向の解像度(dpi)を表1に示すように変更したこと以外は実施例1と同様の操作を行った。
 結果を表1に示す。
[Example 2]
The same operation as in Example 1 was performed except that the resolution (dpi) in the direction of relative movement was changed as shown in Table 1 in the application of the ink for forming the conductive layer (three times).
Table 1 shows the results.

〔実施例3~7〕
 導電層形成用インクに対して吹き付ける風の風速を、表1に示すように変更したこと以外は実施例2と同様の操作を行った。
 結果を表1に示す。
[Examples 3 to 7]
The same operation as in Example 2 was performed, except that the speed of the wind blown against the conductive layer forming ink was changed as shown in Table 1.
Table 1 shows the results.

〔実施例8〕
 排気ダクト及びファンを用いて風を回収したこと以外は実施例2と同様の操作を行った。
 結果を表1に示す。
[Example 8]
The same operation as in Example 2 was performed except that the wind was collected using an exhaust duct and a fan.
Table 1 shows the results.

〔実施例9〕
 風を吹きつける方向を、仰角が30°となる方向(図5及び図7B参照)に変更したこと以外は実施例8と同様の操作を行った。
 結果を表1に示す。
 風を吹きつける方向に関し、より詳細には、図7Bに示す一例と同様に、より詳細には、ドライヤーから吹き出される風の向きが、ドライヤーから見てインクジェットヘッドが配置されている側とは反対向きの成分を含むようにした。
[Example 9]
The same operation as in Example 8 was performed except that the direction in which the wind was blown was changed to a direction in which the elevation angle was 30° (see FIGS. 5 and 7B).
Table 1 shows the results.
Regarding the direction of blowing air, more specifically, the direction of air blown from the dryer is different from the side where the inkjet head is arranged as viewed from the dryer, similar to the example shown in FIG. It was made to contain components in opposite directions.

〔実施例10〕
 ピニング光源とドライヤーとの配置を入れ替えることにより、電子基板に付与されたインクに対してピニング露光を行うタイミングを、インクに対する風の吹き付け後から、インクに対する風の吹き付け前に変更したこと以外は実施例8と同様の操作を行った。
[Example 10]
By changing the arrangement of the pinning light source and the dryer, the timing of performing the pinning exposure on the ink applied to the electronic substrate was changed from after blowing the wind against the ink to before blowing the wind against the ink. The same procedure as in Example 8 was carried out.

〔実施例11〕
 導電層形成用インクに対して吹き付ける風の風速を、表1に示すように変更したこと以外は実施例10と同様の操作を行った。
 結果を表1に示す。
[Example 11]
The same operation as in Example 10 was performed, except that the wind speed for blowing against the conductive layer forming ink was changed as shown in Table 1.
Table 1 shows the results.

〔比較例1〕
 導電層形成用インクに対する風の吹き付けを行わなかったこと以外は実施例2と同様の操作を行った。
 結果を表1に示す。
 
[Comparative Example 1]
The same operation as in Example 2 was performed, except that the air for forming the conductive layer was not blown.
Table 1 shows the results.

Figure JPOXMLDOC01-appb-T000001

 
Figure JPOXMLDOC01-appb-T000001

 

 表1に示すように、電子部品の天面上に着弾した導電層形成用インクに対する風の吹き付けを実施した実施例1~11では、上記風の吹き付けを行わなかった比較例1と比較して、電子部品の側面上から天面上にかけての導電層(即ち、膜)の厚さバラつきを抑制できた。 As shown in Table 1, in Examples 1 to 11 in which wind was blown against the conductive layer forming ink that landed on the top surface of the electronic component, compared to Comparative Example 1 in which the wind was not blown , the variation in the thickness of the conductive layer (that is, film) from the side surface to the top surface of the electronic component could be suppressed.

 実施例2と実施例8との対比より、風の回収を行った場合には(実施例8)、導電層非形成領域へのインクの飛び散りがより抑制されることがわかる。 From the comparison between Example 2 and Example 8, it can be seen that when the wind is collected (Example 8), the scattering of the ink to the conductive layer non-formed region is further suppressed.

 実施例1と実施例2との対比より、相対移動の方向のドット解像度が、相対移動の方向に対して直交する方向のドット解像度よりも高い場合(実施例2)、電子部品の側面上から天面上にかけての導電層(即ち、膜)の厚さバラつきをより抑制できることがわかる。 From the comparison between Example 1 and Example 2, when the dot resolution in the direction of relative movement is higher than the dot resolution in the direction perpendicular to the direction of relative movement (Example 2), from the side of the electronic component It can be seen that variations in the thickness of the conductive layer (that is, film) over the top surface can be further suppressed.

〔実施例101~111、比較例101〕
 以下の点以外は実施例1~11及び比較例1と同様にして、実施例101~111及び比較例101の電子デバイスをそれぞれ得た。
 得られた電子デバイスについて、実施例1における導電層の厚さ及び導電層形成用インクの飛び散りの評価と同様にして、絶縁層の厚さ及び絶縁層形成用インクの飛び散りの評価を行った。
 結果を表2に示す。
[Examples 101 to 111, Comparative Example 101]
Electronic devices of Examples 101 to 111 and Comparative Example 101 were obtained in the same manner as in Examples 1 to 11 and Comparative Example 1 except for the following points.
Regarding the obtained electronic device, the thickness of the insulating layer and the scattering of the insulating layer-forming ink were evaluated in the same manner as the evaluation of the thickness of the conductive layer and the scattering of the conductive layer-forming ink in Example 1.
Table 2 shows the results.

-実施例1~11及び比較例1に対する変更点-
・導電層形成用インクの付与(3回)に代えて下記絶縁層形成用インクの付与(1回)を行い、導電層に代えて絶縁層を形成した。
・風の吹き付け後の焼成を、本露光としてのUV(紫外線)照射に変更した。
 本露光としての紫外線の照射は、紫外線照射装置(製品名「385nmLED光源(13W/cm、京セラ製))を用いて行った。本露光としての露光量は0.8J/cmとした。
 絶縁層用インクに対する風の吹き付けの開始から活性エネルギー線の照射開始までの時間は、0.44秒となるように調整した。
・実施例101~111では、風の吹き付け後のピニング露光を実施せずに上記本露光を実施した。
-Changes from Examples 1 to 11 and Comparative Example 1-
- Instead of applying the conductive layer forming ink (three times), the following insulating layer forming ink was applied (once) to form an insulating layer instead of the conductive layer.
・Baking after blowing wind was changed to UV (ultraviolet) irradiation as main exposure.
The ultraviolet irradiation as the main exposure was performed using an ultraviolet irradiation apparatus (product name: 385 nm LED light source (13 W/cm 2 , manufactured by Kyocera). The exposure amount as the main exposure was 0.8 J/cm 2 .
The time from the start of air blowing to the insulating layer ink to the start of active energy ray irradiation was adjusted to 0.44 seconds.
- In Examples 101 to 111, the main exposure was performed without performing the pinning exposure after blowing air.

-絶縁層用インクの調製-
 300mLの樹脂製ビーカーに、
重合開始剤としての2-(ジメチルアミノ)-2-(4-メチルベンジル)-1-(4-モルホリノフェニル)-ブタン-1-オン(製品名「Omnirad 379」、IGM
Resins B.V.社製)4.0g、
増感剤としての2-イソプロピルチオキサントン(製品名「SPEEDCURE ITX
」、LAMBSON社製;以下、「ITX」ともいう)2.0g、
単官能アクリレートX1(即ち、分子量200以上であり環構造を有する単官能アクリレート)としてのイソボルニルアクリレート(富士フイルム和光純薬社製;以下、「IBOA」ともいう)30.0g、
単官能アクリレートX2としてのサイクリックトリメチロールプロパンホルマールモノアクリレート(大阪有機化学工業社製、ビスコート#200、以下「CTFA」ともいう)15.0g、
単官能モノマーとしてのN-ビニルカプロラクタム(以下、「NVC」ともいう)20.0g、
2官能モノマーとしての1,6-ヘキサンジオールジアクリレート(以下、「1,6-HDDA」ともいう)10.0g、
2官能モノマーとしてのアルコキシ化ヘキサンジオールジアクリレート(サートマー社製、CD561)10.0g、及び、
3官能モノマーとしてのトリメチロールプロパントリアクリレート(富士フイルム和光純薬社製;以下、「TMPTA」ともいう)9.0g
を加え、
ミキサー(製品名「L4R」、シルバーソン社製)を用いて、25℃で5000回転/分の条件で20分間撹拌し、絶縁層用インクを得た。
 
-Preparation of ink for insulating layer-
In a 300 mL resin beaker,
2-(dimethylamino)-2-(4-methylbenzyl)-1-(4-morpholinophenyl)-butan-1-one (product name "Omnirad 379", IGM
Resins B. V. company) 4.0 g,
2-Isopropylthioxanthone as a sensitizer (product name “SPEEDCURE ITX
”, manufactured by LAMBSON; hereinafter also referred to as “ITX”) 2.0 g,
30.0 g of isobornyl acrylate (manufactured by Fujifilm Wako Pure Chemical Industries; hereinafter also referred to as "IBOA") as monofunctional acrylate X1 (that is, monofunctional acrylate having a molecular weight of 200 or more and a ring structure);
15.0 g of cyclic trimethylolpropane formal monoacrylate (manufactured by Osaka Organic Chemical Industry Co., Ltd., Viscoat #200, hereinafter also referred to as “CTFA”) as monofunctional acrylate X2;
20.0 g of N-vinylcaprolactam (hereinafter also referred to as "NVC") as a monofunctional monomer,
10.0 g of 1,6-hexanediol diacrylate (hereinafter also referred to as "1,6-HDDA") as a bifunctional monomer;
10.0 g of alkoxylated hexanediol diacrylate (manufactured by Sartomer, CD561) as a bifunctional monomer, and
9.0 g of trimethylolpropane triacrylate (manufactured by Fujifilm Wako Pure Chemical Industries; hereinafter also referred to as "TMPTA") as a trifunctional monomer
and
Using a mixer (product name “L4R”, manufactured by Silverson), the mixture was stirred at 25° C. and 5000 rpm for 20 minutes to obtain an insulating layer ink.

Figure JPOXMLDOC01-appb-T000002

 
Figure JPOXMLDOC01-appb-T000002

 

 表2に示すように、電子部品の天面上に着弾した絶縁層形成用インクに対する風吹き付けを実施した実施例101~111では、この風の吹き付けを行わなかった比較例101と比較して、電子部品の側面上から天面上にかけての絶縁層(即ち、膜)の厚さバラつきを抑制できた。 As shown in Table 2, in Examples 101 to 111 in which air blowing was performed on the insulating layer forming ink that landed on the top surface of the electronic component, compared with Comparative Example 101 in which this air blowing was not performed, Variation in the thickness of the insulating layer (that is, film) from the side surface to the top surface of the electronic component could be suppressed.

 2021年10月7日に出願された日本国特許出願2021-165574号及び2022年1月12日に出願された日本国特許出願2022-003362号の開示は、その全体が参照により本明細書に取り込まれる。
 本明細書に記載された全ての文献、特許出願、及び技術規格は、個々の文献、特許出願、及び技術規格が参照により取り込まれることが具体的かつ個々に記された場合と同程度に、本明細書に参照により取り込まれる。
The disclosures of Japanese Patent Application No. 2021-165574 filed on October 7, 2021 and Japanese Patent Application No. 2022-003362 filed on January 12, 2022 are herein incorporated by reference in their entirety. It is captured.
All publications, patent applications and technical standards mentioned herein are to the same extent as if each individual publication, patent application and technical standard were specifically and individually noted to be incorporated by reference. incorporated herein by reference.

Claims (19)

 基板厚さ方向の段差を有する基板である段差付き基板を準備する工程と、
 前記段差付き基板における少なくとも前記段差の天面上に、インクジェットヘッドからインクを吐出することにより前記インクを付与し、前記段差の天面上に付与された前記インクに対して風を吹き付けることにより、少なくとも前記段差の天面及び前記段差の側面を被覆する膜を形成する膜形成工程と、
を含む、
膜の形成方法。
preparing a stepped substrate, which is a substrate having a step in the thickness direction of the substrate;
By ejecting ink from an inkjet head to apply the ink onto at least the top surface of the step in the stepped substrate, and blowing air against the ink applied on the top surface of the step, a film forming step of forming a film covering at least the top surface of the step and the side surface of the step;
including,
Membrane formation method.
 前記風の風速が、1m/s以上30m/s未満である、請求項1に記載の膜の形成方法。 The method of forming a film according to claim 1, wherein the wind speed of the wind is 1 m/s or more and less than 30 m/s.  前記膜形成工程は、前記風を回収することを含む、請求項1又は請求項2に記載の膜の形成方法。 The method of forming a film according to claim 1 or 2, wherein the film forming step includes recovering the wind.  前記膜形成工程は、更に、前記風が吹き付けられた前記インクに対し、ピニング露光を施すことを含み、
 前記風の吹き付けの開始から前記ピニング露光開始までの時間が、1秒以下である、
請求項1~請求項3のいずれか1項に記載の膜の形成方法。
The film forming step further includes subjecting the ink blown by the wind to a pinning exposure,
The time from the start of blowing of the wind to the start of the pinning exposure is 1 second or less.
The method for forming a film according to any one of claims 1 to 3.
 前記膜形成工程は、更に、前記段差の天面上に付与されたインクであって前記風が吹き付けられる前の前記インクに対し、ピニング露光を施すことを含む、
請求項1~請求項4のいずれか1項に記載の膜の形成方法。
The film forming step further includes subjecting the ink applied on the top surface of the step to the ink before the wind is blown to a pinning exposure,
The method for forming a film according to any one of claims 1 to 4.
 前記風は、風吹出機から吹き出され、
 前記風の向きは、前記風吹出機から見て前記インクジェットヘッドが配置されている側とは反対向きの成分を含む、
請求項1~請求項5のいずれか1項に記載の膜の形成方法。
The wind is blown out from a wind blower,
The direction of the wind includes a component opposite to the side on which the inkjet head is arranged as viewed from the wind blower,
A method for forming a film according to any one of claims 1 to 5.
 前記膜形成工程における前記インクの付与は、前記段差付き基板と前記インクジェットヘッドとを相対移動させながら行い、
 前記段差付き基板に付与された前記インクにおいて、前記相対移動の方向のドット解像度が、前記相対移動の方向に対して直交する方向のドット解像度よりも高い、
請求項1~請求項6のいずれか1項に記載の膜の形成方法。
The application of the ink in the film forming step is performed while relatively moving the stepped substrate and the inkjet head,
In the ink applied to the stepped substrate, the dot resolution in the direction of the relative movement is higher than the dot resolution in the direction perpendicular to the direction of the relative movement.
A method for forming a film according to any one of claims 1 to 6.
 前記風が、不活性ガスの気流であり、
 前記インクが、重合性化合物を含有する活性エネルギー線硬化型インクである、
請求項1~請求項7のいずれか1項に記載の膜の形成方法。
The wind is an inert gas stream,
wherein the ink is an active energy ray-curable ink containing a polymerizable compound;
A method for forming a film according to any one of claims 1 to 7.
 前記段差付き基板は、ベース基板と、ベース基板上に配置されている部品と、を含み、前記ベース基板と前記部品との間に、隙間が存在する、
請求項1~請求項8のいずれか1項に記載の膜の形成方法。
The stepped substrate includes a base substrate and components arranged on the base substrate, and a gap exists between the base substrate and the components.
A method for forming a film according to any one of claims 1 to 8.
 更に、前記膜形成工程の前に、前記膜が形成される領域を囲む隔壁を、インクジェットヘッドからインクを吐出することにより形成する隔壁形成工程を含む、
請求項1~請求項9のいずれか1項に記載の膜の形成方法。
Furthermore, before the film forming step, a partition wall forming step of forming partition walls surrounding the region where the film is formed by ejecting ink from an inkjet head,
A method for forming a film according to any one of claims 1 to 9.
 更に、前記膜形成工程の前に、少なくとも前記膜が形成される領域に、親水処理を施す工程を含む、
請求項1~請求項10のいずれか1項に記載の膜の形成方法。
Furthermore, before the film forming step, at least the region where the film is formed is subjected to a hydrophilic treatment.
A method for forming a film according to any one of claims 1 to 10.
 配線基板と、前記配線基板上に配置されている電子部品と、を備える電子基板を準備する工程と、
 前記電子基板上に、絶縁層及び導電層の少なくとも一方を形成して電子デバイスを得る工程と、
を含み、
 前記絶縁層及び前記導電層の少なくとも一方を、請求項1~請求項11のいずれか1項に記載の膜の形成方法によって形成する、
電子デバイスの製造方法。
preparing an electronic substrate comprising a wiring substrate and electronic components arranged on the wiring substrate;
forming at least one of an insulating layer and a conductive layer on the electronic substrate to obtain an electronic device;
including
At least one of the insulating layer and the conductive layer is formed by the film forming method according to any one of claims 1 to 11,
A method of manufacturing an electronic device.
 基板厚さ方向の段差を有する基板である段差付き基板における少なくとも前記段差の天面上に、インクを付与するインクジェットヘッドと、
 前記段差の天面上に付与された前記インクに対し、風を吹き付ける風吹出機と、
を備え、
 前記段差付き基板と前記インクジェットヘッドとが相対移動し、
 前記インクジェットヘッドと前記風吹出機とが、前記相対移動の方向に配列されている、膜形成装置。
an inkjet head that applies ink to at least the top surface of the stepped substrate, which is a substrate having a stepped portion in the thickness direction of the substrate;
an air blower for blowing air against the ink applied on the top surface of the step;
with
relative movement between the stepped substrate and the inkjet head,
A film forming apparatus, wherein the inkjet head and the air blower are arranged in the direction of the relative movement.
 更に、前記風を回収する風回収機を備える、
請求項13に記載の膜形成装置。
Furthermore, comprising a wind collector for collecting the wind,
The film forming apparatus according to claim 13.
 前記風吹出機から吹き出される前記風の向きが、前記風吹出機から見て前記インクジェットヘッドが配置されている側とは反対向きの成分を含む、
請求項13又は請求項14に記載の膜形成装置。
The direction of the wind blown from the wind blower includes a component in the opposite direction to the side on which the inkjet head is arranged as viewed from the wind blower,
15. The film forming apparatus according to claim 13 or 14.
 前記風吹出機を2つ備え、
 前記2つの前記風吹出機の間に、前記インクジェットヘッドが配置され、
 前記相対移動が、往復移動である、
請求項13~請求項15のいずれか1項に記載の膜形成装置。
Equipped with two wind blowers,
The inkjet head is arranged between the two air blowers,
wherein the relative movement is reciprocating movement;
The film forming apparatus according to any one of claims 13 to 15.
 前記風吹出機は、前記風の吹き出しを行うオン状態と、前記風の吹き出しを停止するオフ状態と、の切り替えを行うオンオフ機能を備える、
請求項13~請求項16のいずれか1項に記載の膜形成装置。
The wind blower has an on/off function for switching between an on state for blowing the wind and an off state for stopping the blowing of the wind.
The film forming apparatus according to any one of claims 13 to 16.
 更に、前記風が吹き付けられた前記インクに対し、ピニング露光を施すピニング露光機を備える、
請求項13~請求項17のいずれか1項に記載の膜形成装置。
Furthermore, a pinning exposure machine is provided for performing pinning exposure on the ink blown by the wind.
The film forming apparatus according to any one of claims 13 to 17.
 更に、前記段差の天面上に付与された前記インクであって前記風が吹き付けられる前の前記インクに対し、ピニング露光を施すピニング露光機を備える、
請求項13~請求項18のいずれか1項に記載の膜形成装置。
Furthermore, a pinning exposure device is provided for performing pinning exposure on the ink applied on the top surface of the step and before the wind is blown,
The film forming apparatus according to any one of claims 13 to 18.
PCT/JP2022/037011 2021-10-07 2022-10-03 Film formation method, electronic device production method, and film formation device Ceased WO2023058613A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021-165574 2021-10-07
JP2021165574 2021-10-07
JP2022-003362 2022-01-12
JP2022003362 2022-01-12

Publications (1)

Publication Number Publication Date
WO2023058613A1 true WO2023058613A1 (en) 2023-04-13

Family

ID=85804302

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/037011 Ceased WO2023058613A1 (en) 2021-10-07 2022-10-03 Film formation method, electronic device production method, and film formation device

Country Status (2)

Country Link
TW (1) TW202319124A (en)
WO (1) WO2023058613A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0910657A (en) * 1995-07-03 1997-01-14 Matsushita Electric Ind Co Ltd Thin film forming equipment
JP2005262703A (en) * 2004-03-19 2005-09-29 Konica Minolta Photo Imaging Inc Coating apparatus and coating method
JP2013078748A (en) * 2011-10-05 2013-05-02 Sokudo Co Ltd Coating method and coating apparatus
JP2013110315A (en) * 2011-11-22 2013-06-06 Fujifilm Corp Conductive pattern formation method and conductive pattern formation system
JP2014528821A (en) * 2011-07-01 2014-10-30 カティーバ, インコーポレイテッド Apparatus and method for separating carrier liquid vapor from ink

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0910657A (en) * 1995-07-03 1997-01-14 Matsushita Electric Ind Co Ltd Thin film forming equipment
JP2005262703A (en) * 2004-03-19 2005-09-29 Konica Minolta Photo Imaging Inc Coating apparatus and coating method
JP2014528821A (en) * 2011-07-01 2014-10-30 カティーバ, インコーポレイテッド Apparatus and method for separating carrier liquid vapor from ink
JP2013078748A (en) * 2011-10-05 2013-05-02 Sokudo Co Ltd Coating method and coating apparatus
JP2013110315A (en) * 2011-11-22 2013-06-06 Fujifilm Corp Conductive pattern formation method and conductive pattern formation system

Also Published As

Publication number Publication date
TW202319124A (en) 2023-05-16

Similar Documents

Publication Publication Date Title
US11167374B2 (en) Three-dimensional (3D) printing
JP2023070947A (en) Manufacturing method of electronic device, electronic device ink, and ink set
WO2023058613A1 (en) Film formation method, electronic device production method, and film formation device
CN104025723B (en) Conductive pattern is formed with base material, circuit substrate and their manufacture method
WO2023058612A1 (en) Film formation method and method for producing electronic device
US12451440B2 (en) Electronic device and manufacturing method thereof
WO2023074507A1 (en) Method for producing electronic device
US12501540B2 (en) Electronic device and manufacturing method thereof
US20240196519A1 (en) Electronic device and manufacturing method thereof
US20240147630A1 (en) Electronic device and manufacturing method of electronic device
US20240224409A1 (en) Electronic device and manufacturing method thereof
US20230257604A1 (en) Image recording method
US20240414839A1 (en) Manufacturing method of printed circuit board
TW202306460A (en) Electronic device and manufacturing method for electronic device
US12389549B2 (en) Manufacturing method of electronic device
WO2023189328A1 (en) Method for manufacturing laminate
WO2023032356A1 (en) Electronic device and method for manufacturing electronic device
CN118900729A (en) Method for producing an electric conductor, method for producing an electromagnetic wave shielding body, and electric conductor
WO2023119883A1 (en) Inspection device, printing system, inspection system, curing system, substrate manufacturing method, and program
CN116601246B (en) Ink set, laminate, and method for producing laminate

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22878482

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22878482

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP