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WO2022224958A1 - Corps lié en cuivre/céramique et carte de circuit imprimé isolée - Google Patents

Corps lié en cuivre/céramique et carte de circuit imprimé isolée Download PDF

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Publication number
WO2022224958A1
WO2022224958A1 PCT/JP2022/018171 JP2022018171W WO2022224958A1 WO 2022224958 A1 WO2022224958 A1 WO 2022224958A1 JP 2022018171 W JP2022018171 W JP 2022018171W WO 2022224958 A1 WO2022224958 A1 WO 2022224958A1
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Prior art keywords
active metal
copper
ceramic
ceramic substrate
thickness
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PCT/JP2022/018171
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English (en)
Japanese (ja)
Inventor
伸幸 寺▲崎▼
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details

Definitions

  • the present invention provides a copper/ceramic joined body in which a copper member made of copper or a copper alloy and a ceramic member are joined, and an insulating circuit in which a copper plate made of copper or a copper alloy is joined to the surface of a ceramic substrate.
  • substrates This application claims priority based on Japanese Patent Application No. 2021-070219 filed in Japan on April 19, 2021, the content of which is incorporated herein.
  • a power module, an LED module, and a thermoelectric module have a structure in which a power semiconductor element, an LED element, and a thermoelectric element are joined to an insulating circuit board in which a circuit layer made of a conductive material is formed on one side of an insulating layer.
  • power semiconductor elements for high power control used to control wind power generation, electric vehicles, hybrid vehicles, etc. generate a large amount of heat during operation.
  • Patent Document 1 proposes an insulated circuit board in which a circuit layer and a metal layer are formed by bonding copper plates to one side and the other side of a ceramic substrate.
  • copper plates are arranged on one surface and the other surface of a ceramic substrate with an Ag—Cu—Ti brazing material interposed therebetween, and the copper plates are joined by heat treatment (so-called active metal brazing method).
  • Patent Document 2 proposes a power module substrate in which a copper plate made of copper or a copper alloy and a ceramic substrate made of AlN or Al 2 O 3 are bonded using a bonding material containing Ag and Ti. ing. Furthermore, Patent Document 3 proposes a power module substrate in which a copper plate made of copper or a copper alloy and a ceramic substrate made of silicon nitride are bonded using a bonding material containing Ag and Ti. As described above, when a copper plate and a ceramic substrate are bonded using a bonding material containing Ti, Ti, which is an active metal, reacts with the ceramic substrate, thereby improving the wettability of the bonding material and the copper plate. The bonding strength with the ceramic substrate is improved.
  • the heat generation temperature of the semiconductor elements mounted on the insulated circuit board tends to be higher, and the insulated circuit board is required to have higher cooling/heating cycle reliability to withstand severe cooling/heating cycles.
  • Ti which is an active metal
  • an intermetallic compound containing Cu and Ti precipitates.
  • the vicinity of the joint interface becomes hard, cracks may occur in the ceramic member during thermal cycle loading, and there is a risk of deterioration in thermal cycle reliability.
  • the present invention has been made in view of the above-mentioned circumstances. It is an object of the present invention to provide an insulated circuit board made of this copper/ceramic bonded body.
  • the inventors of the present invention conducted intensive studies and found that the shape of the copper member to be bonded to one surface and the other surface of the ceramic member, the application state of the bonding material, and the liquid phase during bonding It was found that the structure of the bonding interface between the copper plate bonded to one surface of the ceramic member and the bonding interface between the copper plate bonded to the other surface of the ceramic member differs depending on the occurrence conditions. If the hardness of the bonding interface between the copper member bonded to one surface and the other surface of the ceramic member is different, the balance of the thermal stress applied to the ceramic member during the thermal cycle load will be lost, and the ceramic member will be damaged. It was found that cracks are likely to occur.
  • the copper/ceramic joined body of the present invention is a copper/ceramic joined body in which a copper member made of copper or a copper alloy and a ceramic member are joined.
  • the copper member is bonded to one surface and the other surface of the ceramic member, respectively, and an active metal compound layer is formed on the ceramic member side at the bonding interface between the ceramic member and the copper member.
  • active metals Ti, Zr, Nb, Hf
  • An active metal diffusion region having an active metal concentration of 0.5% by mass or more is formed, and the active metal diffusion region in the copper member bonded to the one surface side from the active metal compound layer is formed.
  • the maximum reachable distance L1 and the maximum reachable distance L2 of the active metal diffusion region in the copper member bonded to the other surface side from the active metal compound layer are set within a range of 20 ⁇ m or more and 80 ⁇ m or less, and The difference between the maximum reaching distance L1 of the active metal diffusion region on the surface side and the maximum reaching distance L2 of the active metal diffusion region on the other surface side is 10 ⁇ m or less.
  • the maximum reaching distance L1 from the active metal compound layer of the active metal diffusion region in the copper member bonded to the one surface side and the other surface side Since the maximum reaching distance L2 from the active metal compound layer of the active metal diffusion region in the joined copper member is set to be in the range of 20 ⁇ m or more and 80 ⁇ m or less, the ceramic member and the copper member are firmly bonded by the active metal. , and hardening of the bonding interface is suppressed.
  • the thickness ta1 of the active metal compound layer formed on the one surface side of the ceramic member and the thickness ta1 formed on the other surface side of the ceramic member is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, and the thickness ratio ta1/ta2 is in the range of 0.7 or more and 1.4 or less. is preferred.
  • the thickness ta1 of the active metal compound layer formed on the one surface side of the ceramic member and the thickness ta2 of the active metal compound layer formed on the other surface side of the ceramic member is within the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, so that the ceramic member and the copper member are reliably and strongly bonded by the active metal, and the hardening of the bonding interface is further suppressed. . Then, since the thickness ratio ta1/ta2 is set within the range of 0.7 or more and 1.4 or less, the hardness of the bonding interface between the copper members bonded to the one surface and the other surface of the ceramic member respectively , and cracking of the ceramic member under thermal cycle load can be further suppressed.
  • an Ag—Cu alloy layer is formed on the copper member side at the bonding interface between the ceramic member and the copper member, and the one side of the ceramic member.
  • the ratio tb1/tb2 between the thickness tb1 of the Ag--Cu alloy layer formed on the surface side and the thickness tb2 of the Ag--Cu alloy layer formed on the other surface side of the ceramic member is 0.0. It is preferably within the range of 7 or more and 1.4 or less.
  • the thickness tb1 of the Ag—Cu alloy layer formed on the one surface side of the ceramic member and the thickness of the Ag—Cu alloy layer formed on the other surface side of the ceramic member Since the ratio tb1/tb2 to tb2 is within the range of 0.7 or more and 1.4 or less, the hardness of the bonding interface between the copper members bonded to one surface and the other surface of the ceramic member respectively , and cracking of the ceramic member under thermal cycle load can be further suppressed.
  • the insulated circuit board of the present invention is an insulated circuit board in which a copper plate made of copper or a copper alloy is bonded to the surface of a ceramic substrate, and the copper plates are bonded to one surface and the other surface of the ceramic substrate, respectively.
  • an active metal compound layer is formed on the ceramic substrate side, and the active metal (Ti, Zr, Nb, Hf) are diffused from the ceramic substrate side to the copper plate side to form an active metal diffusion region in which the concentration of the active metal in the copper plate is 0.5% by mass or more. and the active metal compound of the active metal diffusion region in the copper plate bonded to the other surface side of the copper plate bonded to the other surface side.
  • the maximum reaching distance L2 from the layer is in the range of 20 ⁇ m or more and 80 ⁇ m or less, and the maximum reaching distance L1 of the active metal diffusion region on the one surface side and the active metal diffusion region on the other surface side and the maximum reaching distance L2 is 10 ⁇ m or less.
  • the difference between the maximum reaching distance L1 of the active metal diffusion region on the one surface side and the maximum reaching distance L2 of the active metal diffusion region on the other surface side is 10 ⁇ m or less, There is no large difference in the hardness of the bonding interface between the copper plate bonded to one side and the other side of the ceramic substrate, and the occurrence of cracks in the ceramic substrate under thermal cycle load can be suppressed, improving thermal cycle reliability. Are better.
  • an active metal compound layer is formed on the ceramic substrate side at the bonding interface between the ceramic substrate and the copper plate, and the active metal compound layer is formed on the one surface side of the ceramic substrate.
  • a thickness ta1 of the formed active metal compound layer and a thickness ta2 of the active metal compound layer formed on the other surface side of the ceramic substrate are in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less.
  • the thickness ratio ta1/ta2 is preferably in the range of 0.7 to 1.4.
  • the thickness ta1 of the active metal compound layer formed on the one surface side of the ceramic substrate and the thickness ta2 of the active metal compound layer formed on the other surface side of the ceramic substrate since it is in the range of 0.05 ⁇ m to 1.2 ⁇ m, the ceramic substrate and the copper plate are reliably and strongly bonded by the active metal, and hardening of the bonding interface is further suppressed. Since the thickness ratio ta1/ta2 is in the range of 0.7 or more and 1.4 or less, the hardness of the bonding interface between the copper plates respectively bonded to one surface and the other surface of the ceramic substrate A large difference does not occur, and it is possible to further suppress the occurrence of cracks in the ceramic substrate under a thermal cycle load.
  • an Ag—Cu alloy layer is formed on the copper plate side at the bonding interface between the ceramic substrate and the copper plate, and is formed on the one surface side of the ceramic member.
  • a ratio tb1/tb2 between the thickness tb1 of the Ag--Cu alloy layer formed on the ceramic member and the thickness tb2 of the Ag--Cu alloy layer formed on the other side of the ceramic member is 0.7 or more1. It is preferable to be in the range of 4 or less.
  • the thickness tb1 of the Ag—Cu alloy layer formed on the one surface side of the ceramic substrate and the thickness of the Ag—Cu alloy layer formed on the other surface side of the ceramic substrate Since the ratio tb1/tb2 to tb2 is within the range of 0.7 or more and 1.4 or less, A large difference does not occur, and it is possible to further suppress the occurrence of cracks in the ceramic substrate under a thermal cycle load.
  • the present invention even when a severe thermal cycle is applied, the occurrence of cracks in the ceramic member can be suppressed, and the copper / ceramics joined body has excellent thermal cycle reliability, and the copper / ceramics joined body It is possible to provide an insulated circuit board that is
  • FIG. 1 is a schematic explanatory diagram of a power module using an insulated circuit board according to an embodiment of the present invention
  • FIG. FIG. 2 is an enlarged explanatory view of the joint interface between the circuit layer and the ceramic substrate of the insulated circuit board and the joint interface between the metal layer and the ceramic substrate according to the embodiment of the present invention, which is the joint interface with the circuit layer.
  • FIG. 2 is an enlarged explanatory view of the joint interface between the circuit layer and the ceramic substrate of the insulated circuit board and the joint interface between the metal layer and the ceramic substrate according to the embodiment of the present invention, which is the joint interface with the metal layer.
  • 1 is a flowchart of a method for manufacturing an insulated circuit board according to an embodiment of the present invention
  • FIGS. 1A and 1B are schematic explanatory diagrams of a method for manufacturing an insulated circuit board according to an embodiment of the present invention, in which (a) is a bonding material disposing step, (b) is a laminating step, (c) is a heating step, and (d) is a cooling step. It is an insulated circuit board obtained through
  • the copper/ceramic bonded body according to the present embodiment includes a ceramic substrate 11 as a ceramic member made of ceramics, and a copper plate 42 (circuit layer 12) and a copper plate 43 (metal layer 13) as copper members made of copper or a copper alloy. is an insulating circuit board 10 formed by bonding the .
  • FIG. 1 shows a power module 1 having an insulated circuit board 10 according to this embodiment.
  • the upper surface in FIG. 1 is referred to as one surface (first surface), and the lower surface in FIG. 1 is referred to as the other surface (second surface).
  • This power module 1 includes an insulating circuit board 10 on which a circuit layer 12 and a metal layer 13 are arranged, and a semiconductor element 3 bonded to one surface (upper surface in FIG. 1) of the circuit layer 12 via a bonding layer 2. and a heat sink 5 arranged on the other surface side of the metal layer 13 (the lower surface side in FIG. 1).
  • the semiconductor element 3 is made of a semiconductor material such as Si.
  • the semiconductor element 3 and the circuit layer 12 are bonded via the bonding layer 2 .
  • the bonding layer 2 is made of, for example, a Sn--Ag-based, Sn--In-based, or Sn--Ag--Cu-based solder material.
  • the heat sink 5 is for dissipating heat from the insulating circuit board 10 described above.
  • the heat sink 5 is made of copper or a copper alloy, and is made of phosphorus-deoxidized copper in this embodiment.
  • the heat sink 5 is provided with a channel through which cooling fluid flows.
  • the heat sink 5 and the metal layer 13 are joined by a solder layer 7 made of a solder material.
  • the solder layer 7 is made of, for example, a Sn--Ag-based, Sn--In-based, or Sn--Ag--Cu-based solder material.
  • the insulating circuit board 10 of the present embodiment includes a ceramic substrate 11, a circuit layer 12 provided on one surface (upper surface in FIG. 1) of the ceramic substrate 11, and a ceramic substrate. and a metal layer 13 disposed on the other surface (lower surface in FIG. 1) of the substrate 11 .
  • the ceramics substrate 11 is made of ceramics such as silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), alumina (Al 2 O 3 ), etc., which are excellent in insulation and heat dissipation.
  • the ceramic substrate 11 is made of aluminum nitride (AlN), which has excellent heat dissipation properties.
  • the thickness of the ceramic substrate 11 is set within a range of, for example, 0.2 mm or more and 1.5 mm or less, and is set to 0.635 mm in this embodiment.
  • the circuit layer 12 has a copper plate 42 made of copper or a copper alloy on one surface of the ceramic substrate 11 (upper surface in FIGS. 4A to 4D). It is formed by joining.
  • the circuit layer 12 is formed by punching out a rolled plate of oxygen-free copper, arranging it in a circuit pattern and bonding it to the ceramic substrate 11 .
  • the thickness of the copper plate 42 that forms the circuit layer 12 is set within a range of 0.1 mm or more and 2.0 mm or less, and is set to 0.6 mm in this embodiment.
  • the metal layer 13 has a copper plate 43 made of copper or a copper alloy on the other surface of the ceramic substrate 11 (the lower surface in FIGS. 4A to 4D). It is formed by joining. In this embodiment, the metal layer 13 is formed by bonding a rolled plate of oxygen-free copper to the ceramic substrate 11 .
  • the thickness of the copper plate 43 that forms the metal layer 13 is set within a range of 0.1 mm or more and 2.0 mm or less, and is set to 0.6 mm in this embodiment.
  • an active metal compound layer 21 and an Ag--Cu alloy layer 22 are formed in order from the ceramic substrate 11 side. Further, in the circuit layer 12, the concentration of the active metal in the circuit layer 12 is reduced to 0.00 by diffusing the active metal (Ti in this embodiment) to the bonding interface side with the ceramic substrate 11 toward the circuit layer 12 side.
  • An active metal diffusion region 23 of 5 mass % or more is formed.
  • the maximum reaching distance L1 of the active metal diffusion region 23 from the active metal compound layer 21 is set within the range of 20 ⁇ m or more and 80 ⁇ m or less.
  • an active metal compound layer 31 and an Ag—Cu alloy layer 32 are formed in order from the ceramic substrate 11 side.
  • the concentration of the active metal in the metal layer 13 is reduced to 0.00 by diffusing the active metal (Ti in this embodiment) to the bonding interface side with the ceramic substrate 11 toward the metal layer 13 side.
  • An active metal diffusion region 33 of 5 mass % or more is formed.
  • the maximum reachable distance L2 of the active metal diffusion region 33 from the active metal compound layer 31 is within the range of 20 ⁇ m or more and 80 ⁇ m or less.
  • the maximum reaching distance L1 of the active metal diffusion region 23 in the circuit layer 12 formed on one surface of the ceramic substrate 11 and the maximum reaching distance L1 in the metal layer 13 formed on the other surface of the ceramic substrate 11 are:
  • the difference from the maximum reaching distance L2 of the active metal diffusion region 33 is 10 ⁇ m or less.
  • the thickness ta1 of the active metal compound layer 21 formed on one side of the ceramic substrate 11 and the thickness ta1 of the active metal compound layer 31 formed on the other side of the ceramic substrate 11 are It is preferable that the thickness ta2 is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, and the thickness ratio ta1/ta2 is in the range of 0.7 or more and 1.4 or less.
  • the bonding material 45 contains Ti as an active metal and the ceramic substrate 11 is made of aluminum nitride
  • the active metal compound layers 21 and 31 are made of titanium nitride (TiN). .
  • the thickness tb1 of the Ag--Cu alloy layer 22 formed on one side of the ceramic substrate 11 and the thickness tb1 of the Ag--Cu alloy layer 32 formed on the other side of the ceramic substrate 11 It is preferable that the ratio tb1/tb2 to the thickness tb2 of the substrate be within the range of 0.7 or more and 1.4 or less. Further, the thickness of the Ag--Cu alloy layer 22 (Ag--Cu alloy layer 32) is preferably 1 ⁇ m or more and 30 ⁇ m or less.
  • a copper plate 42 to be the circuit layer 12 and a copper plate 43 to be the metal layer 13 are prepared.
  • the copper plate 42 to be the circuit layer 12 is a pressed piece arranged in a circuit pattern.
  • a bonding material 45 is applied to the bonding surfaces of the copper plate 42 to be the circuit layer 12 and the copper plate 43 to be the metal layer 13, and dried (FIG. 4(a)).
  • the coating thickness of the paste-like bonding material 45 is preferably within the range of 10 ⁇ m or more and 50 ⁇ m or less after drying. In this embodiment, the paste bonding material 45 is applied by screen printing.
  • the bonding material 45 contains Ag and active metals (Ti, Zr, Nb, Hf).
  • an Ag--Ti based brazing material (Ag--Cu--Ti based brazing material) is used as the bonding material 45.
  • the Ag--Ti-based brazing material (Ag--Cu--Ti-based brazing material) contains, for example, Cu in the range of 0 mass% or more and 32 mass% or less, and Ti, which is an active metal, in the range of 0.5 mass% or more and 20 mass% or less. It is preferable to use a composition that is included within the range and that the balance is Ag and unavoidable impurities.
  • the specific surface area (BET value) of the Ag powder contained in the paste-like bonding material 45 by adjusting the specific surface area (BET value) of the Ag powder contained in the paste-like bonding material 45, the maximum reaching distance L1 of the active metal diffusion regions 23, 33 from the active metal compound layers 21, 31 , L2. That is, when the specific surface area of the Ag powder is small, the sinterability of the paste-like bonding material 45 is increased, and a liquid phase is likely to occur in the heating step S03 described later, promoting the diffusion of the active metal, and the above-mentioned maximum reaching. longer distance.
  • BET value specific surface area
  • the specific surface area of Ag powder is preferably 0.15 m 2 /g or more, more preferably 0.25 m 2 /g or more, and more preferably 0.40 m 2 /g or more.
  • the specific surface area of Ag powder is preferably 1.40 m 2 /g or less, more preferably 1.00 m 2 /g or less, and more preferably 0.75 m 2 /g or less.
  • the particle size of the Ag powder contained in the paste-like bonding material 45 preferably has a D10 of 0.7 ⁇ m or more and 3.5 ⁇ m or less and a D100 of 4.5 ⁇ m or more and 23 ⁇ m or less.
  • a copper plate 42 to be the circuit layer 12 is laminated on one surface of the ceramic substrate 11 (upper surface in FIG. 4(b)) with a bonding material 45 interposed therebetween, and the other surface of the ceramic substrate 11 (see FIG. 4 ( In b), a copper plate 43 to be the metal layer 13 is laminated on the lower surface) with a bonding material 45 interposed therebetween.
  • the heating temperature in the heating step S03 is preferably within the range of 800° C. or higher and 850° C. or lower. It is preferable that the sum of the temperature integral values in the heating step from 780° C. to the heating temperature and the holding step at the heating temperature be in the range of 7° C.h or more and 80° C.h or less.
  • the pressure load in the heating step S03 is preferably in the range of 0.029 MPa or more and 2.94 MPa or less.
  • the degree of vacuum in the heating step S03 is preferably in the range of 1 ⁇ 10 ⁇ 6 Pa or more and 5 ⁇ 10 ⁇ 2 Pa or less.
  • cooling step S04 After the heating step S03, cooling is performed to solidify the molten bonding material 45, thereby bonding the copper plate 42 that will be the circuit layer 12 and the ceramic substrate 11, and the ceramic substrate 11 and the copper plate 43 that will be the metal layer 13. do.
  • the cooling rate in this cooling step S04 is preferably within the range of 2° C./min or more and 20° C./min or less.
  • the cooling rate here is the cooling rate from the heating temperature to 780° C., which is the Ag—Cu eutectic temperature.
  • the cooling step S04 by flowing an inert gas to either the circuit layer 12 (copper plate 42) side or the metal layer 13 (copper plate 43) side, the circuit layer 12 (copper plate 42) side and the metal layer 13 side are cooled. It becomes possible to adjust the cooling rate on the (copper plate 43) side.
  • the heating step S03 and the cooling step S04 when the SPS (discharge plasma sintering) method is applied, the electrode on the circuit layer 12 (copper plate 42) side and the electrode on the metal layer 13 (copper plate 43) side By adjusting the flow rate of the cooling water, it is possible to adjust the cooling rate on the circuit layer 12 (copper plate 42) side and the metal layer 13 (copper plate 43) side.
  • the insulated circuit board 10 (FIG. 4(d)) of the present embodiment is manufactured through the bonding material disposing step S01, the laminating step S02, the heating step S03, and the cooling step S04.
  • Heat-sink bonding step S05 Next, the heat sink 5 is bonded to the other side of the metal layer 13 of the insulated circuit board 10 .
  • the insulating circuit board 10 and the heat sink 5 are laminated with a solder material interposed therebetween and placed in a heating furnace.
  • semiconductor element bonding step S06 Next, the semiconductor element 3 is soldered to one surface of the circuit layer 12 of the insulating circuit board 10 .
  • the power module 1 shown in FIG. 1 is produced by the above-described steps.
  • the maximum reaching distances L1 and L2 of the active metal diffusion regions 23 and 33 from the active metal compound layers 21 and 31 are set to 20 ⁇ m or more, so the active metal of the bonding material 45 reacts sufficiently.
  • the ceramic substrate 11, the circuit layer 12 and the metal layer 13 are firmly bonded.
  • the maximum reaching distances L1 and L2 of the active metal diffusion regions 23 and 33 from the active metal compound layers 21 and 31 are set to It is preferably 25 ⁇ m or more, more preferably 35 ⁇ m or more. Further, in order to further suppress the joining interface from becoming harder than necessary, the maximum reaching distances L1 and L2 of the active metal diffusion regions 23 and 33 from the active metal compound layers 21 and 31 should be 75 ⁇ m or less. is preferable, and 65 ⁇ m or less is more preferable.
  • the maximum reaching distance L1 from the active metal compound layer 21 of the active metal diffusion region 23 in the circuit layer 12 formed on one surface of the ceramic substrate 11 and the distance L1 from the active metal compound layer 21 on the other surface of the ceramic substrate 11 Since the difference between the active metal diffusion region 33 in the formed metal layer 13 and the maximum reaching distance L2 from the active metal compound layer 31 is 10 ⁇ m or less, the circuit layer 12 formed on one surface of the ceramic substrate 11 and the metal layer 13 formed on the other surface of the ceramic substrate 11 does not have a large difference in the hardness of the joint interface, and cracking of the ceramic substrate 11 can be suppressed under thermal cycle load, and thermal cycle reliability is improved. Are better.
  • the maximum reaching distance L1 from the active metal compound layer 21 of the active metal diffusion region 23 in the circuit layer 12 formed on one surface of the ceramic substrate 11 is preferably 8 ⁇ m or less, more preferably 6 ⁇ m or less. . Note that the difference between the maximum reaching distance L1 and the maximum reaching distance L2 may be 0 ⁇ m.
  • the thickness ta1 of the active metal compound layer 21 formed on one side of the ceramic substrate 11 on the side of the circuit layer 12, and the thickness ta1 of the metal layer 21 formed on the other side of the ceramic substrate 11 When the thickness ta2 of the active metal compound layer 31 formed on the layer 13 side is 0.05 ⁇ m or more, the active metal of the bonding material 45 sufficiently reacts with the ceramic substrate 11, and the ceramic substrate 11, the circuit layer 12 and the metal layer 13 are joined more firmly.
  • the thickness ta1 of the active metal compound layer 21 and the thickness ta2 of the active metal compound layer 31 are set to 1.2 ⁇ m or less, it is possible to suppress the bonding interface from becoming unnecessarily hard, thereby improving the reliability of the thermal cycle. It is possible to further improve the performance.
  • the thickness ta1 of the active metal compound layer 21 and the thickness ta2 of the active metal compound layer 31 are set to 0.08 ⁇ m or more. is preferable, and 0.15 ⁇ m or more is more preferable. Further, in order to further suppress the bonding interface from becoming unnecessarily hard, it is preferable to set the thickness ta1 of the active metal compound layer 21 and the thickness ta2 of the active metal compound layer 31 to 1.0 ⁇ m or less. 0.6 ⁇ m or less is more preferable.
  • the thickness ratio ta1/ta2 of the thickness ta1 of the active metal compound layer 21 and the thickness ta2 of the active metal compound layer 31 is in the range of 0.7 or more and 1.4 or less. Therefore, there is no large difference in the hardness of the bonding interface between the circuit layer 12 formed on one surface of the ceramic substrate 11 and the metal layer 13 formed on the other surface of the ceramic substrate 11. It is possible to further suppress the occurrence of cracks in the ceramic substrate 11 in . In order to further suppress the occurrence of cracks in the ceramic substrate 11 under thermal cycle load, the thickness ratio ta1/ta2 of the thickness ta1 of the active metal compound layer 21 and the thickness ta2 of the active metal compound layer 31 should be set to 0. 0.8 or more and 1.2 or less, and more preferably 0.9 or more and 1.1 or less.
  • the thickness tb1 of the Ag—Cu alloy layer 22 formed on one side of the ceramic substrate 11 and the thickness tb1 of the Ag—Cu alloy layer 32 formed on the other side of the ceramic substrate 11 are When the ratio tb1/tb2 to the thickness tb2 is in the range of 0.7 or more and 1.4 or less, the circuit layer 12 formed on one surface of the ceramics substrate 11 and the other surface of the ceramics substrate 11 There is no large difference in the hardness of the joint interface with the metal layer 13 formed on the surface of the ceramic substrate 11, and the occurrence of cracks in the ceramic substrate 11 under thermal cycle load can be further suppressed.
  • the thickness ratio tb1/ tb2 is more preferably in the range of 0.8 or more and 1.2 or less, and more preferably in the range of 0.9 or more and 1.1 or less.
  • a power module is configured by mounting a semiconductor element on an insulated circuit board, but the present invention is not limited to this.
  • an LED module may be configured by mounting an LED element on the circuit layer of the insulating circuit board, or a thermoelectric module may be configured by mounting a thermoelectric element on the circuit layer of the insulating circuit board.
  • the ceramic substrate is made of aluminum nitride ( AlN).
  • other ceramic substrates such as silicon nitride (Si 3 N 4 ) may be used.
  • Ti was used as an example of the active metal contained in the bonding material. It suffices if it contains the above active metals. These active metals may be contained as hydrides.
  • a ceramic substrate (40 mm ⁇ 40 mm) shown in Table 1 was prepared.
  • the thickness of AlN and Al 2 O 3 was 0.635 mm, and the thickness of Si 3 N 4 was 0.32 mm.
  • two copper pieces of 37 mm ⁇ 18 mm having a thickness shown in Table 1 and made of oxygen-free copper were prepared as a copper plate serving as a circuit layer.
  • a copper plate made of oxygen-free copper and having a thickness of 37 mm ⁇ 37 mm as shown in Table 1 was prepared as a copper plate serving as a metal layer.
  • a bonding material containing Ag powder having a BET value shown in Table 1 was applied to a copper plate serving as a circuit layer so that the target thickness after drying was 25 ⁇ m.
  • a bonding material containing Ag powder having a BET value shown in Table 1 was applied to a copper plate serving as a metal layer so that the target thickness after drying was 25 ⁇ m.
  • a paste material was used as the bonding material, and the amounts of Ag, Cu, and active metal were as shown in Table 1.
  • the BET value (specific surface area) of the Ag powder was measured by using AUTOSORB-1 manufactured by QUANTACHRROME, vacuum deaeration by heating at 150 ° C. for 30 minutes as pretreatment, N 2 adsorption, liquid nitrogen 77 K, BET multipoint method. It was measured.
  • a copper plate serving as a circuit layer was laminated on one surface of the ceramic substrate. At this time, two copper pieces were arranged with an interval of 1 mm. A copper plate serving as a metal layer was laminated on the other surface of the ceramic substrate.
  • This laminate was heated while being pressed in the lamination direction to generate an Ag—Cu liquid phase.
  • the pressure load was set to 0.294 MPa, and the temperature integral value was set as shown in Table 2.
  • the bonding was performed by the SPS (discharge plasma sintering) method, and the cooling rate shown in Table 2 was obtained by adjusting the flow rate of the cooling water between the electrode on the circuit layer side and the electrode on the metal layer side. was adjusted to be
  • the active metal diffusion region, active metal compound layer, Ag-Cu alloy layer, and thermal cycle reliability were evaluated as follows.
  • the maximum reaching distance is the reaching distance of the active metal diffusion region from the surface of the active metal compound layer in contact with the circuit layer, or the reaching distance of the active metal diffusion region from the surface of the active metal compound layer in contact with the metal layer.
  • the maximum distance measured along the stacking direction. Table 2 lists the largest maximum reachable distance among the maximum reachable distances in each of the five fields of view.
  • the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side and the maximum reaching distance L2 of the active metal diffusion region on the metal layer side are is in the range of 20 ⁇ m or more and 80 ⁇ m or less, and the difference between the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side and the maximum reaching distance L2 of the active metal diffusion region on the metal layer side is set to 10 ⁇ m or less.
  • Examples 1-3 are Comparative Example 1 in which the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side is less than 20 ⁇ m, and the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side and the active metal diffusion region on the metal layer side. It is confirmed that the cooling/heating cycle reliability is superior to that of Comparative Example 2 in which the difference from the maximum reaching distance L2 of the metal diffusion region exceeds 10 ⁇ m.
  • the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side and the maximum reachable distance L1 of the active metal diffusion region on the metal layer side are The reaching distance L2 is set to be in the range of 20 ⁇ m or more and 80 ⁇ m or less, and the difference between the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side and the maximum reaching distance L2 of the active metal diffusion region on the metal layer side is set to 10 ⁇ m or less.
  • Examples 4-6 of the present invention are Comparative Example 3 in which the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side and the maximum reaching distance L2 of the active metal diffusion region on the metal layer side exceed 80 ⁇ m, and Compared to Comparative Example 4 in which the difference between the maximum reaching distance L1 of the active metal diffusion region and the maximum reaching distance L2 of the active metal diffusion region on the metal layer side exceeds 10 ⁇ m, it is confirmed that the cooling/heating cycle reliability is superior. .
  • the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side and the maximum reaching distance of the active metal diffusion region on the metal layer side are L2 is in the range of 20 ⁇ m or more and 80 ⁇ m or less, and the difference between the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side and the maximum reaching distance L2 of the active metal diffusion region on the metal layer side is set to 10 ⁇ m or less.
  • the maximum reaching distance L2 of the active metal diffusion region on the metal layer side exceeds 80 ⁇ m
  • the maximum reaching distance L1 of the active metal diffusion region on the circuit layer side and the maximum reaching distance of the active metal diffusion region on the metal layer side exceed 80 ⁇ m. It is confirmed that the cooling/heating cycle reliability is superior to that of Comparative Example 5 in which the difference from the distance L2 exceeds 10 ⁇ m.
  • Insulated circuit board (copper/ceramic joint) 11 Ceramic substrate (ceramic member) 12 circuit layer (copper member) 13 metal layer (copper member) 21, 31 active metal compound layers 22, 32 Ag—Cu alloy layers 23, 33 active metal diffusion regions

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Abstract

Ce corps lié en cuivre/céramique comprend un élément en céramique et des éléments en cuivre liés respectivement à une surface de l'élément en céramique et à l'autre surface de l'élément en céramique. Une région de diffusion de métal actif dans laquelle la concentration d'un métal actif dans l'élément de cuivre est de 0,5 % en masse ou plus est formée sur un côté d'élément céramique de chacun des éléments de cuivre, chacune de la distance maximale L1 d'une région diffusée de métal actif formée sur un côté de surface et la distance de portée maximale L2 d'une région diffusée de matériau actif formée sur l'autre côté de surface est réglée à une valeur comprise dans la plage de 20 µm à 80 µm inclus, et la différence entre la distance maximale de portée L1 et la distance maximale de portée L2 est de 10 µm ou moins.
PCT/JP2022/018171 2021-04-19 2022-04-19 Corps lié en cuivre/céramique et carte de circuit imprimé isolée Ceased WO2022224958A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003055058A (ja) * 2001-08-23 2003-02-26 Denki Kagaku Kogyo Kk セラミック体と銅板の接合方法
JP2012119519A (ja) * 2010-12-01 2012-06-21 Denki Kagaku Kogyo Kk セラミックス回路基板およびこれを用いたモジュール
JP2014090144A (ja) * 2012-10-31 2014-05-15 Denki Kagaku Kogyo Kk セラミック回路基板および製造方法
JP2015092552A (ja) * 2013-09-30 2015-05-14 三菱マテリアル株式会社 Ｃｕ／セラミックス接合体、Ｃｕ／セラミックス接合体の製造方法、及び、パワーモジュール用基板
JP2016169111A (ja) * 2015-03-11 2016-09-23 デンカ株式会社 セラミックス回路基板
WO2017213207A1 (fr) * 2016-06-10 2017-12-14 田中貴金属工業株式会社 Carte de circuit imprimé en céramique et procédé de fabrication d'une telle carte

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003055058A (ja) * 2001-08-23 2003-02-26 Denki Kagaku Kogyo Kk セラミック体と銅板の接合方法
JP2012119519A (ja) * 2010-12-01 2012-06-21 Denki Kagaku Kogyo Kk セラミックス回路基板およびこれを用いたモジュール
JP2014090144A (ja) * 2012-10-31 2014-05-15 Denki Kagaku Kogyo Kk セラミック回路基板および製造方法
JP2015092552A (ja) * 2013-09-30 2015-05-14 三菱マテリアル株式会社 Ｃｕ／セラミックス接合体、Ｃｕ／セラミックス接合体の製造方法、及び、パワーモジュール用基板
JP2016169111A (ja) * 2015-03-11 2016-09-23 デンカ株式会社 セラミックス回路基板
WO2017213207A1 (fr) * 2016-06-10 2017-12-14 田中貴金属工業株式会社 Carte de circuit imprimé en céramique et procédé de fabrication d'une telle carte

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