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WO2022220015A1 - Dispositif de formation de film et procédé de formation de film l'utilisant - Google Patents

Dispositif de formation de film et procédé de formation de film l'utilisant Download PDF

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Publication number
WO2022220015A1
WO2022220015A1 PCT/JP2022/012607 JP2022012607W WO2022220015A1 WO 2022220015 A1 WO2022220015 A1 WO 2022220015A1 JP 2022012607 W JP2022012607 W JP 2022012607W WO 2022220015 A1 WO2022220015 A1 WO 2022220015A1
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Prior art keywords
film
region
vapor deposition
film forming
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2022/012607
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English (en)
Japanese (ja)
Inventor
学幸 松平
尊重 枡川
芳幸 大瀧
匡之 清水
充祐 宮内
裕志 室谷
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Shincron Co Ltd
Tokai University Educational System
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Shincron Co Ltd
Tokai University Educational System
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Publication of WO2022220015A1 publication Critical patent/WO2022220015A1/fr
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • the present invention relates to a film forming apparatus and a film forming method using the same, and more particularly to a film forming apparatus and film forming method using an ion beam assisted vacuum deposition method.
  • Non-Patent Document 1 Non-Patent Document 1
  • the problem to be solved by the present invention is to provide a film forming apparatus capable of forming a low refractive index film with high mechanical strength and a film forming method using the same.
  • the present invention comprises: a film forming chamber in which at least a vapor deposition material and a substance to be vapor-deposited are provided; an exhaust device for decompressing the entire inside of the film forming chamber; an air supply device that supplies a gas that does not prevent the vaporization of the vapor deposition material; a blocking member that prevents the gas supplied from the air supply device from flowing toward a second region containing the vapor deposition material;
  • a film forming apparatus including a control device for forming a film on a substrate.
  • the gas while reducing the pressure in the entire inside of the film-forming chamber, when supplying the gas that does not react with the formed film to the first region containing the object to be vapor-deposited, the gas contains the vapor deposition material by means of the blocking member. Since the flow toward the second region is suppressed, it is possible to suppress an increase in the atmospheric pressure in the second region. As a result, the first region, in which the evaporated vapor deposition material is deposited on the object to be deposited, can be kept at a relatively high pressure (low vacuum), while the second region, in which the vapor deposition material is evaporated, is kept at a low pressure (high vacuum). As a result, a film with high mechanical strength and low refractive index can be formed.
  • FIG. 6 is a view taken along line VI-VI of FIG. 5; 2 is a graph showing the atmospheric pressures of the first region R1 and the second region R2 shown in FIG.
  • FIG. 1 is a schematic longitudinal section showing a vacuum deposition apparatus according to a comparative example of the present invention.
  • 1 is a micrograph of an observed surface of an embodiment of a thin film according to the present invention.
  • 9B is a micrograph of the cross section of FIG. 9A.
  • FIG. 3 is a diagram showing the results of evaluation of antifogging properties for Reference Examples 1 to 3 of the present invention.
  • FIG. 1 is a schematic longitudinal section showing a vacuum vapor deposition apparatus 1 as a first embodiment of a film forming apparatus according to the present invention
  • FIG. 2 is a view taken along line II-II in FIG.
  • the vacuum vapor deposition apparatus 1 is also an apparatus for carrying out the film forming method according to the present invention.
  • the vacuum deposition apparatus 1 of the present embodiment includes a housing 2 forming a film forming chamber 2a which is a substantially closed space, a first exhaust device 3 for reducing the pressure of the entire inside of the film forming chamber 2a, and a film forming chamber.
  • a second exhaust device 4 for locally depressurizing a second region R2 inside the chamber 2a, a substrate holder 5 for holding a substrate S which is an object to be vapor-deposited, a vapor deposition mechanism 6, a first region R1 (object to be vapor-deposited) a gas supply device 8 for introducing a predetermined gas into the substrate S and its periphery), and the gas supplied from the gas supply device 8 is supplied to the second region R2 (meaning the vapor deposition material M and its periphery) and a control to evaporate the vapor deposition material M while controlling the atmospheric pressure inside the film forming chamber 2a and to form a film of the evaporated vapor deposition material M on the substrate S.
  • the second region R2 meaning the vapor deposition material M and its periphery
  • the first region R1 may be a region including at least the substrate S, and its range is not clearly defined and is not limited at all.
  • the second region R2 may be a region containing at least the vapor deposition material M, and its range is not clearly defined and is not limited at all.
  • the film-forming chamber 2a may or may not include regions other than the first region R1 and the second region R2.
  • the vacuum deposition apparatus 1 of this embodiment has a box shape having an upper surface (ceiling surface), a lower surface (bottom surface) and a plurality of side surfaces, or a cylindrical shape having an upper surface (ceiling surface), a lower surface (bottom surface) and curved side surfaces.
  • a housing 2 is provided, and the inside of the housing 2 constitutes a film forming chamber 2a as a substantially closed space.
  • the upper surface of the housing 2 is referred to as the upper surface
  • the lower surface is referred to as the lower surface
  • the lateral surface is referred to as the side surface for convenience.
  • It is a convenient definition for explaining the relative positional relationship among the first exhaust device 3, the substrate holder 5, and the vapor deposition mechanism 6 provided in the housing 2, and the attitude of the actually installed vacuum vapor deposition device 1. is not defined absolutely.
  • the substrate holder 5 and the deposition mechanism 6 are arranged vertically (vertically). , and the substrate holder 5 and the vapor deposition mechanism 6 may be arranged in the left-right direction, the horizontal direction, or the oblique direction. Further, in the vacuum deposition apparatus 1 of the embodiment shown in FIG. 1, the substrate holder 5 and the deposition mechanism 6 are arranged vertically (vertically).
  • the second exhaust device 4 is arranged on the side surface and the second exhaust device 4 is arranged on the bottom surface of the housing 2
  • the film forming apparatus and the film forming method of the present invention are not limited to this arrangement, and the first exhaust device 3 and the second exhaust device are arranged. 4 can be arranged at an appropriate location with respect to the housing 2 .
  • the first exhaust device 3, as shown in FIG. 1, is provided approximately in the center of the side surface of the housing 2 via a gate valve 3a.
  • the gate valve 3a is an airtight valve that opens and closes the first exhaust device 3 and the film formation chamber 2a, and the gate valve 3a is opened when the pressure in the film formation chamber 2a is reduced.
  • the gate valve 3a is closed when the substrate S is introduced into the film formation chamber 2a through an opening (not shown) or when the substrate S on which film formation is completed is taken out from the film formation chamber 2a.
  • a turbomolecular pump (TMP) or a constant pressure pump (CP) can be used, and it is desirable that the device has a rated capacity to reduce the pressure inside the film forming chamber 2a to 0.01 Pa or less.
  • the second exhaust device 4 is provided on the lower surface of the housing 2 directly below the vapor deposition mechanism 6 via a gate valve 4a.
  • the gate valve 4a is an airtight valve that opens and closes the second exhaust device 4 and the film formation chamber 2a, and the gate valve 4a is opened when the pressure inside the film formation chamber 2a is reduced.
  • the gate valve 4a is closed when the substrate S is introduced into the film formation chamber 2a through an opening (not shown) or when the substrate S on which film formation is completed is taken out from the film formation chamber 2a.
  • a turbomolecular pump (TMP) or a constant pressure pump (CP) can be cited, and the second region R2 including the vapor deposition mechanism 6 in the inside of the film forming chamber 2a can be decompressed to 0.01 Pa or less. It is desirable to have rated capacity.
  • a plate-shaped substrate holder 5 is suspended by a rotating shaft 5b, and the rotating shaft 5b is rotatably supported on the upper surface of the housing 2.
  • the substrate holder 5 is rotatable around a rotating shaft 5b rotated by a driving portion 5c.
  • the substrate holding surface 5a of the substrate holder 5 holds the substrate S on which the vapor deposition material M is deposited.
  • the number of substrates S held by the substrate holder 5 is not limited at all, and may be one or more.
  • the holding portion that holds the substrate S may be configured to be rotatable with respect to the substrate holder 5, and the substrate S may be rotated and revolved by a planetary mechanism.
  • the drive unit 5c may be omitted to provide a non-rotating substrate holder 5.
  • FIG. 1 a plurality of substrates S can be held on the substrate holding surface 5a of the substrate holder 5, and the substrate holder 5 is provided so that the plurality of substrates S are positioned directly above the vapor deposition mechanism 6. ing.
  • a vapor deposition mechanism 6 is provided in the vicinity of the lower surface inside the film forming chamber 2a.
  • the vapor deposition mechanism 6 of this embodiment is composed of an electron beam vapor deposition source, and includes a crucible 6a filled with a vapor deposition material M and an electron gun 6b for irradiating the vapor deposition material M filled in the crucible 6a with an electron beam.
  • a shutter 6c for opening and closing an upper opening of the crucible 6a is movably provided above the crucible 6a.
  • a material M is applied to a substrate S.
  • Reference numeral 6d shown in FIG. 1 denotes a cooling pipe coil of a Meissner trap, which efficiently removes water released from the substrate S when the inside of the film forming chamber 2a is evacuated.
  • the vapor deposition material M used in the vacuum vapor deposition apparatus 1 of this embodiment is not particularly limited, but includes silicon dioxide, magnesium fluoride, aluminum oxide, zirconium dioxide, tantalum oxide, titanium dioxide, niobium oxide, hafnium dioxide, and the like. can be mentioned.
  • Resistance heating may be used as the evaporation source of the vapor deposition mechanism 6 instead of electron beam heating using an electron gun. Resistance heating is a method in which voltage is applied across a heating element and heating is performed by Joule heat generated by flowing current.
  • the heating elements used include high-melting-point metals such as tungsten, tantalum, and molybdenum, carbon, boron nitride/titanium boride mixed sintered bodies, and the like. Depending on the substance to be evaporated, the heating element may be processed into a shape suitable for use, or a heat-resistant crucible may be used in combination.
  • An ion source 11 is installed in a second region R2 on the side of the vapor deposition mechanism 6 near the lower surface inside the film forming chamber 2a.
  • the ion source 11 is an ion assist ion source that assists the film formation process of the substrate S by the vapor deposition mechanism 6 with ions.
  • the irradiation range of the ion beam of the ion source 11 is a predetermined range of all or part of the substrate holding surface 5 a of the substrate holder 5 . A portion of the substrate S held on the substrate holding surface 5a of the substrate holder 5 of this embodiment is temporarily hidden by the blocking member 7 as the substrate holder 5 rotates, so that the ion beam is not blocked by the blocking member 7. An ion beam from the ion source 11 is irradiated toward the range.
  • the ion source 11 for example, an ion source that uses grid-shaped electrodes to extract ions from the plasma, that is, a so-called Kaufmann ion source is used.
  • the operating pressure of the Kaufman-type ion source is 0.02 Pa or less.
  • the Kaufman-type ion source 11 includes a housing, an anode and a filament arranged in the housing, a magnet for generating a magnetic field arranged outside the housing, and an opening of the housing. and a screen-shaped acceleration electrode arranged outside the screen electrode.
  • a reactive gas such as oxygen or an inert gas such as argon is supplied into the housing and a positive potential is applied to the anode to heat the filament, an electric discharge occurs.
  • a plasma is generated in the enclosure.
  • the generated plasma is densified by the magnetic field of a magnet arranged outside the housing.
  • ions are extracted from the plasma, pass through the screen electrode, are accelerated, and the substrate S is irradiated with the ions.
  • a shutter for blocking the irradiation of the substrate S with ions an adjustment plate for adjusting the directivity of the ions, or the like may be installed.
  • a neutralizer for irradiating the substrate S with negative electrons may be installed in the film forming chamber 2a.
  • the ion source 11 is not limited to the Kauffman type ion source, and an ion source other than the Kauffman type may be used as long as the operating pressure is 0.05 Pa or less, which is the atmospheric pressure of the second region R2.
  • the atmosphere pressure of the first region R1 including the substrate S in the film formation chamber 2a is set to the first pressure, while the deposition material M in the film formation chamber 2a is set to a second pressure lower than the first pressure, and the vapor deposition process can be performed.
  • the second pressure of the second region R2 containing the vapor deposition material M is set by the exhaust of the first exhaust device 3 and the second exhaust device 4 described above.
  • the first pressure in the first region R1 including the substrate S is generated by the gas supply by the air supply device 8 and the shutoff member 7 in addition to the exhaust by the first exhaust device 3 and the second exhaust device 4 described above. is set by controlling the gas flow by
  • the vacuum deposition apparatus 1 of the present embodiment includes an air supply device 8 that introduces a predetermined inert gas or an active gas that does not react with the formed film into the first region R1 including the substrate S held by the substrate holder 5.
  • the air supply device 8 of this embodiment includes a nozzle 8a and a gas supply source 8b.
  • the gas supply source 8b is a supply source for supplying the atmosphere gas inside the film formation chamber 2a, for example, argon gas, other inert gas, or a gas that does not react with the formed film. be.
  • the nozzle 8a and the gas supply source 8b have the sole purpose of increasing the atmospheric pressure in the first region R1 with respect to the atmospheric pressure in the second region, and supply a reactive gas to remove the reacted film. It does not generate Therefore, an active gas that hardly reacts with the formed silicon dioxide film, such as oxygen gas when the vapor deposition material is silicon dioxide, may be introduced into the first region R1.
  • a plurality of nozzles 8a are connected to one or a plurality of gas supply sources 8b, and from the plurality of nozzles 8a toward the first region R1.
  • a predetermined gas may be blown onto the surface.
  • the inside of the film forming chamber 2a is an inert gas atmosphere or an active gas atmosphere that does not react with the formed film.
  • the vacuum deposition apparatus 1 of the present embodiment suppresses the gas supplied from the air supply device 8 from flowing toward the second region R2 in order to set the first pressure in the first region R1 including the substrate S.
  • a blocking member 7 is provided.
  • the blocking member 7 of the present embodiment has a bottom surface 7a and a side surface 7b rising from the bottom surface 7a, and is formed in a bottomed cylindrical shape with an upper surface 7c facing the bottom surface 7a that is entirely or partially opened. .
  • the cross section of the blocking member 7 shown in FIG. 1 is circular as shown in FIG. May be set. Further, as shown in FIG. 1, the nozzle 8a may be fixed through the blocking member 7.
  • the blocking member 7 of the present embodiment is arranged so that a predetermined gap G is formed between the opened upper surface 7c and the substrate holding surface 5a of the substrate holder 5. As shown in FIG. In this gap G, when gas is introduced from the air supply device 8 into the third region R3 surrounded by the blocking member 7, the gas leaks into the first region R1 through the gap G and passes through the first region R1. It is dimensioned to be adjustable to a first pressure higher than that of the second region R2. By providing this gap G, the gas supplied from the air supply device 8 and blown out to the third region R3 is prevented from flowing directly toward the second region R2 by the bottom surface 7a and/or the side surface 7b of the blocking member 7.
  • Suitable dimensions of the gap G are mainly determined by the volume of the third region R3 surrounded by the blocking member 7, the flow rate of the gas from the air supply device 8, the first pressure of the first region R1 to be adjusted, and the pressure of the second region R2.
  • a second pressure can be determined.
  • the control device 10 includes ON/OFF of the first exhaust device 3, opening and closing of the gate valve 3a, ON/OFF of the second exhaust device 4, opening and closing of the gate valve 4a, and ON/OFF of the driving portion 5c of the substrate holder 5. It governs rotational speed control, operation control of the vapor deposition mechanism 6 including opening and closing of the shutter 6c, gas flow control including ON/OFF of the nozzle 8a, operation control including ON/OFF of the ion source 11, and the like. Then, while the inside of the film-forming chamber 2a is controlled to have a predetermined atmospheric pressure, film-forming control is performed by the ion-assisted vacuum deposition method.
  • the substrate S is mounted on the substrate holding surface 5a of the substrate holder 5, the housing 2 is sealed, and then the gate valve 3a is opened to perform the first evacuation.
  • the device 3 is operated to set the set value of the first evacuation device 3 to, for example, 0.01 Pa, thereby depressurizing the inside of the film forming chamber 2a as a whole.
  • the gate valve 4a is opened to operate the second exhaust device 4, and the setting value of the second exhaust device 4 is set to, for example, 0.01 Pa to localize the second region R2 including the vapor deposition mechanism 6. depressurize.
  • the supply of gas from the air supply device 8 to the third region R3 is started.
  • the drive unit 5c may be driven to start rotating the substrate holder 5 at a predetermined rotational speed.
  • the inert gas or the like supplied to the third region R3 and leaking from the gap G flows toward the first region R1 including the substrate S held by the substrate holder 5.
  • the atmospheric pressure in the first region R1 including the substrate S held by the substrate holder 5 becomes higher than that in the general region inside the film forming chamber 2a.
  • the gas supplied to the third region R3 is suppressed or prevented from flowing directly toward the second region R2 by the bottom surface 7a and/or the side surface 7b of the blocking member 7.
  • the pressure increasing effect of the air supply device 8 does not reach R2.
  • the atmospheric pressure in the second region R2 including the vapor deposition mechanism 6 and the ion source 11 is locally exhausted by the second exhaust device 4, so that the atmosphere is maintained at a lower pressure than in the first region R1. Become.
  • the atmospheric pressure in the second region R2 is preferably 0.05 Pa or less, and the atmospheric pressure in the first region R1 is preferably 0.05 Pa or less.
  • the electron gun 6b of the vapor deposition mechanism 6 is operated to heat and evaporate the vapor deposition material M filled in the crucible 6a, and the shutter 6c is opened to attach the vaporized vapor deposition material M to the substrate S.
  • each of the first region R1 and the second region R2 is provided with a pressure sensor for detecting the atmospheric pressure. , the opening/closing control of the shutter 6c is executed.
  • the ion source 11 starts operating simultaneously with the operation of the vapor deposition mechanism 6, before or after the operation of the vapor deposition mechanism 6, and irradiates the substrate S with ions. Since the ion source 11 is a Kaufmann ion source with an operating pressure of 0.05 Pa or less, it operates properly at the atmospheric pressure of the second region R2.
  • the kinetic energy of the ions irradiated from the ion source 11 accelerates the vapor deposition material M which is vaporized and floating by the vapor deposition mechanism 6 and presses it against the substrate S, or densifies the surface of the thin film deposited on the substrate S. .
  • the thin film formed on the surface of the substrate S has high adhesiveness, denseness and mechanical strength.
  • FIG. 7 is a graph showing the atmospheric pressures of the first region R1 and the second region R2 and the set pressures of the first exhaust device 3 and the second exhaust device 4, and the vertical axis represents the logarithm of the pressure.
  • the reason why the second region R2 including the vapor deposition mechanism 6 is set to 0.05 Pa or less is that if the atmospheric pressure is higher than this, the vapor deposition material M will not evaporate.
  • the reason why the first region R1 including the substrate S is set to 0.05 Pa or more is that if the atmospheric pressure is lower than this, a desired low refractive index thin film cannot be obtained.
  • the reason why the first region R1 including the substrate S is set to 100 Pa or less is that if the atmospheric pressure is higher than this, the vapor deposition material M cannot reach the substrate S and the film cannot be formed.
  • the second region R2 including the deposition mechanism 6 should be 0.05 Pa or less, and the first region R1 including the substrate S should be 0.05 to 100 Pa. Therefore, the first exhaust device 3 and the second exhaust Specific numerical values of the set pressure of the device 4 and the amount of gas supplied from the air supply device 8 are not particularly limited.
  • the atmospheric pressure of the second region R2 including the vapor deposition mechanism 6 is set to a pressure at which vapor deposition is possible (preferably within a range close to the upper limit). pressure), and the atmospheric pressure in the first region R1 including the substrate S is set to a relatively high pressure, so that a thin film with a low refractive index can be obtained by the vacuum deposition method.
  • the mechanical strength of the thin film can be increased compared to the case where no ion assist is performed.
  • the film forming apparatus of the present invention and the film forming method using the same are not limited to the first embodiment shown in FIGS. 1 and 2, and can be modified in various ways.
  • the film formation chamber 2a is returned to the atmospheric pressure atmosphere, the substrate S after film formation is removed, and the substrate S before film formation is mounted.
  • a vacuum deposition apparatus 1 based on a so-called batch production system is shown.
  • the vacuum vapor deposition apparatus 1 may be a so-called continuous production system that carries out/carrys in.
  • semiconductor wafers, glass substrates, and the like are exemplified as objects to be deposited to form vapor deposition films, and these are mounted on the substrate holder 5. It may be a wound film-forming object. In the case of a film-formed object wound in a roll shape, instead of the substrate holder 5, there is a feed-side roller that supports the roll before film formation and feeds the film, and a winder that winds the film after film formation. Side rollers may also be provided.
  • FIG. 3 is a schematic longitudinal section showing a second embodiment of the vacuum deposition apparatus according to the present invention
  • FIG. 4 is an arrow view along line IV-IV in FIG. 3
  • FIG. 5 is a vacuum deposition apparatus according to the present invention
  • FIG. 6 is a schematic vertical cross section showing the third embodiment of FIG. 6, which is a view taken along the line VI-VI of FIG. 2nd Embodiment and 3rd Embodiment differ in the structure of the interruption
  • the description of the first embodiment is used here.
  • the side surface 7b of the blocking member 7 is connected to the housing 2, and the third region R3 is formed by the blocking member 7 and a part of the housing 2. It is configured.
  • the blocking member 7 may form the third region R3 together with other parts.
  • the blocking member 7 may be configured as a part of another component instead of being a single component.
  • the film forming apparatus and the film forming method using the film forming apparatus of the present invention can be applied to a thin film excellent in hydrophilicity, durability and durability of the hydrophilic function, and a method of forming a thin film having such properties.
  • a thin film excellent in hydrophilicity, durability and durability of the hydrophilic function and a method of forming a thin film having such properties.
  • the thin film of the present embodiment is a thin film including at least the first film F having a columnar structure with voids in a cross-sectional view along the thickness direction of the film.
  • the surface of the first film F has a contact angle with water of 30° or less, preferably 10° or less.
  • FIG. 9A shows a microscopic photograph of the surface of the first film F made of silicon dioxide formed by a film forming method to be described later
  • FIG. 9B shows a microscopic photograph of the cross section of the first film F.
  • symbol S indicates the substrate and symbol F indicates the first film.
  • reference character CR indicates a crack, which will be described later.
  • the columnar structure of the first film F of the present embodiment is basically a columnar structure extending in directions of 90° ⁇ 20° with respect to the surface of the base such as the substrate S, as shown in FIG. 9B.
  • the base on which the first film F of the present embodiment is formed is not particularly limited, and is formed, for example, on the surface of a substrate, the surface of another film, or between layers of another film.
  • the substrate S which is an object to be film-formed, is not particularly limited, and may be a glass substrate, an acrylic substrate or other plastic substrate, or a metal substrate.
  • the effect of the present invention is obtained when using a substrate for optical applications that requires anti-fogging treatment due to its water repellency and requires durability such as mechanical strength because it is likely to be touched or washed. is further demonstrated.
  • the first film F of the present embodiment is a film with a columnar structure having voids in a cross-sectional view along the thickness direction of the film. That is, in the first film F of the present embodiment, crystals of a columnar structure of silicon dioxide extend substantially perpendicularly to the substrate S, that is, in a direction of 90° ⁇ 20°, and minute gaps are formed between the first film and the first film. is formed from the surface of the film F toward the back surface. Further, as shown in FIG. 9A, the surface of the first film F has cracks CR communicating with the voids. That is, the fine voids formed between the silicon dioxide crystals are exposed as cracks CR on the surface of the first film F.
  • the first film F of the present embodiment is not particularly limited, but preferably has a pencil hardness of 2B or more. Moreover, the thin film F of the present embodiment is not particularly limited, but preferably has a refractive index of less than 1.44. Furthermore, the first film F of the present embodiment is not particularly limited, but may be composed of a single film or may be applied to a multilayer film, but is preferably composed of a single film. When the first film F of this embodiment is applied to a multilayer film, it may be applied to any of the bottom layer, intermediate layer, or outermost layer. Applications of the thin film including the first film F of the present embodiment are not particularly limited, and can be used for optical applications, functional applications, and other applications.
  • Examples of materials for the first film F of this embodiment include silicon dioxide, magnesium fluoride, aluminum oxide, zirconium dioxide, tantalum oxide, titanium dioxide, niobium oxide, and hafnium dioxide.
  • a second film may be formed on the surface of the first film F of this embodiment.
  • the second film formed at this time is desirably a thin film that does not interfere with the columnar structure with voids of the first film F or that can maintain the columnar structure with voids.
  • this type of second film include, but are not limited to, single-layer thin films of silicon dioxide, magnesium fluoride, aluminum oxide, zirconium dioxide, tantalum oxide, titanium dioxide, niobium oxide, hafnium dioxide, and the like.
  • an organic film can be mentioned as this kind of second film.
  • Further examples of such second films include multilayer films containing silicon dioxide, magnesium fluoride, aluminum oxide, zirconium dioxide, tantalum oxide, titanium dioxide, niobium oxide or hafnium dioxide, or organic films.
  • Forming a single layer film of silicon dioxide, magnesium fluoride, aluminum oxide, zirconium dioxide, tantalum oxide, titanium dioxide, niobium oxide or hafnium dioxide on the film F of 1, and further forming an organic film thereon. can be done.
  • the second film when a multilayer film containing silicon dioxide, magnesium fluoride, aluminum oxide, zirconium dioxide, tantalum oxide, titanium dioxide, niobium oxide or hafnium dioxide, or an organic film is used as the second film, the second film having the columnar structure
  • a multilayer film of silicon dioxide, magnesium fluoride, aluminum oxide, zirconium dioxide, tantalum oxide, titanium dioxide, niobium oxide or hafnium dioxide may be formed on the film F of 1, and an organic film may be formed thereon. can.
  • the columnar A thin film of a low refractive index material and a thin film of a high refractive index material may be alternately formed on the first film F having the structure.
  • the second film When the second film is formed on the first film F having a columnar structure, it must be a thin film that does not interfere with the columnar structure with voids of the first film F or that can maintain the columnar structure with voids. Therefore, it is desirable to set the film thickness of the second film to about 200 nm or less.
  • the surface of the first film F having a columnar structure having voids in a cross-sectional view along the thickness direction of the film has a small contact angle with water of 30° or less. If the film is formed so as not to disturb the columnar structure having voids of F or to maintain the columnar structure having voids, a thin film having a large contact angle with water but having antifogging properties can be obtained.
  • FIG. 10 shows Reference Example 1 of a single layer film of the first film F described above, Reference Example 2 of forming a second film on the first film F, and a single layer having a gap but not a columnar structure.
  • FIG. 10 is a diagram showing the results of visually confirming the presence or absence of fogging by exposing the films of Reference Example 3 to steam for 3 minutes in an apparatus conforming to JIS K2399 (anti-fogging agent for automobiles). The contact angle with water was measured using DM-301 manufactured by Kyowa Interface Science Co., Ltd. As shown in FIG.
  • the anti-fogging property of the thin film of Reference Example 1 is remarkably excellent, and the anti-fogging property of the thin film of Reference Example 2 is equally excellent.
  • Example 1 Using the vacuum deposition apparatus 1 of FIGS. 1 and 2, a target film thickness is applied to one side of a glass substrate S (N-BK7 manufactured by SCHOTT, plate thickness 1.0 mm, ⁇ 30 mm, refractive index n: 1.5168). A thin film of silicon dioxide was deposited to a thickness of 500 nm. As conditions for film formation at this time, the vertical distance between the crucible 6a of the vapor deposition mechanism 6 and the substrate S shown in FIG. degree was set to 0.001 Pa.
  • silicon dioxide was used as the deposition material M, and the current amount of the electron gun 6b was set to 170 mA. Also, the substrate S was heated to 200.degree. A Kaufman ion source 11 was used as the ion source, and the output was set to an acceleration voltage of 1.0 kV and an acceleration current of 0.8 A.
  • the spectral transmittance and spectral reflectance of the resulting silicon dioxide film were measured using a spectrophotometer (Hitachi High-Technologies U-4100), and the refractive index of the film after film formation was determined from the transmittance and reflectance. was calculated. Further, the same film was subjected to a pencil hardness test (according to JIS K5600 general test methods for paints 4.4 scratch hardness (pencil method)). In addition, the contact angle of water on the same film was measured using DM-301 manufactured by Kyowa Interface Science Co., Ltd. The results are shown in Table 1.
  • Example 1 The shielding member 7 was removed from the vacuum deposition apparatus 1 used in Example 1 (see FIG. 8), the degree of vacuum in the entire inside of the film forming chamber 2a was set to 0.001 Pa, and the output setting of the ion source 11 was set to the accelerating voltage. A film was formed under the same conditions as in Example 1, except that the film was formed by vacuum deposition at 0.5 kV and an accelerating current of 0.2 A. Table 1 shows the pencil hardness and refractive index of the resulting silicon dioxide film.
  • Example 1 As the result of Example 1, the atmospheric pressure in the first region R1 is 0.05 to 100 Pa, the pressure in the second region R2 is 0.05 Pa or less, and the ion-assisted vacuum deposition by the vacuum deposition apparatus 1 using the blocking member 7.
  • the process produced a film with a refractive index of 1.333, which is lower than the 1.46 refractive index of silicon dioxide (bulk), the deposition material.
  • a low refractive index film generally has low mechanical strength
  • Example 1 a film having a pencil hardness test result of 2H was formed. This is because the degree of vacuum in the second region R2 has become sufficiently high, so that the output setting value of the ion source 11 can be increased.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention comprend : une chambre de formation de film (2a) dans laquelle se trouvent au moins un matériau de dépôt en phase vapeur (M) et un objet de réception de dépôt en phase vapeur (S) ; des dispositifs d'échappement (3, 4) qui dépressurisent la totalité de l'intérieur de la chambre de formation de film ; un dispositif d'alimentation en gaz (8) qui fournit un gaz qui ne va pas réagir avec le film formé sur une première région (R1) comprenant l'objet de réception de dépôt en phase vapeur ; un élément d'arrêt (7) qui supprime l'écoulement du gaz fourni par le dispositif d'alimentation en gaz vers une seconde région (R2) comprenant le matériau de dépôt en phase vapeur ; et un dispositif de commande (10) qui amène le matériau de dépôt en phase vapeur vaporisé à former un film sur l'objet de réception de dépôt en phase vapeur.
PCT/JP2022/012607 2021-04-13 2022-03-18 Dispositif de formation de film et procédé de formation de film l'utilisant Ceased WO2022220015A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316083A (ja) * 1995-05-19 1996-11-29 Kao Corp 磁気記録媒体の製造方法
JPH0963055A (ja) * 1995-08-29 1997-03-07 Kao Corp 磁気記録媒体の製造方法
WO2010073517A1 (fr) * 2008-12-26 2010-07-01 Kusano Eiji Appareil de pulvérisation cathodique
WO2015097898A1 (fr) * 2013-12-27 2015-07-02 株式会社シンクロン Procédé de formation d'un film antireflet multicouche
WO2018143206A1 (fr) * 2017-01-31 2018-08-09 学校法人東海大学 Procédé de formation de film
WO2021075385A1 (fr) * 2019-10-15 2021-04-22 学校法人東海大学 Procédé de formation de film et appareil de formation de film

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316083A (ja) * 1995-05-19 1996-11-29 Kao Corp 磁気記録媒体の製造方法
JPH0963055A (ja) * 1995-08-29 1997-03-07 Kao Corp 磁気記録媒体の製造方法
WO2010073517A1 (fr) * 2008-12-26 2010-07-01 Kusano Eiji Appareil de pulvérisation cathodique
WO2015097898A1 (fr) * 2013-12-27 2015-07-02 株式会社シンクロン Procédé de formation d'un film antireflet multicouche
WO2018143206A1 (fr) * 2017-01-31 2018-08-09 学校法人東海大学 Procédé de formation de film
WO2021075385A1 (fr) * 2019-10-15 2021-04-22 学校法人東海大学 Procédé de formation de film et appareil de formation de film

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