WO2022188645A1 - Sputter coating apparatus and device, and sputter coating assembly thereof - Google Patents

Abstract

Disclosed in the present invention are a sputter coating apparatus and a sputter coating assembly. The sputter coating apparatus is used for bombarding a target so as to form a film layer on the surface of a substrate by means of sputter coating. The sputter coating apparatus comprises: a reaction cavity body, which has a reaction cavity; and an electrode assembly and a discharge coil assembly. The electrode assembly and the discharge coil assembly are arranged in the reaction cavity. During sputter coating, the substrate is accommodated in the reaction cavity, the target is arranged on the electrode assembly, the electrode assembly and the discharge coil assembly are electrically connected to a radio frequency power supply, and the radio frequency power supply provides a working radio frequency current for the electrode assembly and the discharge coil assembly, so as to form a film layer on the surface of the substrate by means of deposition.

Description

Sputter coating apparatus and equipment and its sputter coating assembly

This application claims the priority of the Chinese patent application with the application number 202110269016.2 and the invention titled "Sputtering Coating Apparatus and Equipment and its Sputtering Coating Assembly", which was filed with the China Patent Office on March 12, 2021, the entire contents of which are by reference Incorporated in this application.

technical field

The invention relates to the field of coating, and furthermore, to a sputtering coating device and equipment and a sputtering coating assembly.

Background technique

Sputtering coating is a widely used physical vapor deposition method to prepare surface coatings. It is a technology in which charged particles are used to bombard the surface of the target in a vacuum chamber, and the bombarded particles are deposited on the surface of the substrate to form a coating. . Compared with traditional vacuum evaporation, sputtering coating has many advantages, such as strong adhesion between film and substrate, convenient preparation of high melting point material films, and reactive sputtering to prepare compound films.

The simplest sputtering coating method is DC two-stage sputtering, which is a method of sputtering coating by forming a glow discharge structure composed of a pair of cathodes and anodes. In the DC two-stage sputtering method, the cathode is used as the sputtering target, the substrate to be coated is placed between the two electrodes or on the anode, and a DC high voltage is applied between the two electrodes under an appropriate gas pressure to make the gas discharge generate plasma, wherein The ions are subjected to the action of the cathode electric field to accelerate the bombardment of the cathode target, so that the target material is sputtered from the surface and deposited on the surface of the substrate to form a coating. However, due to the low DC diode discharge efficiency and thus the low plasma density, the sputtering yield and deposition rate are low. DC diode sputtering has been rarely used in practice.

In order to improve the efficiency of sputtering coating, people have improved the ordinary DC diode sputtering, install a magnet behind the cathode target, and form a strong magnetic field of more than several hundred Gauss near the cathode to confine the electrons near the cathode to greatly improve the discharge efficiency. , thereby greatly improving the sputtering rate, which is the well-known DC magnetron sputtering method. The DC magnetron sputtering method is widely used in the preparation of metal, alloy and conductive compound coatings.

However, neither the DC diode sputtering method nor the DC magnetron sputtering method can be used for the preparation of insulating material coatings, because the insulating material cannot act as a cathode to generate discharge. In order to use the sputtering effect to prepare the insulating material coating, people think of using radio frequency discharge; applying a radio frequency voltage between the two electrodes, the insulating material target is made into a thin sheet and fixed on the radio frequency driving electrode, and the substrate to be coated is placed on the radio frequency driving electrode. between the two electrodes or on the ground electrode. The radio frequency electric field can penetrate the insulating material target to discharge between the two poles to generate plasma, and act together with the plasma to form a self-bias on the surface of the insulating material target, which accelerates the ion bombardment of the target material, so that the target material is sputtered and deposited on the substrate. A coating is formed on the surface. This sputtering coating method using radio frequency discharge is called radio frequency sputtering. A typical RF sputtering frequency is 13.56MHz.

Similar to the DC diode sputtering method, the RF sputtering method also has the problems of lower discharge efficiency, lower plasma density, lower sputtering yield and deposition rate. In order to solve this problem, a seemingly natural solution is to combine RF discharge with magnetron cathode, that is, to apply RF voltage to the magnetron sputtering target, which is RF magnetron sputtering.

However, RF magnetron sputtering does not achieve as significant deposition efficiency improvement as DC magnetron sputtering does for DC diode sputtering. Compared with RF sputtering, the deposition rate improvement of RF magnetron sputtering is very limited. The typical deposition rate of DC magnetron sputtering is several hundred nanometers per minute, while the typical deposition rate of RF magnetron sputtering is only a few nanometers per minute. Such a low deposition rate seriously restricts the application of RF magnetron sputtering in the industry. . Alternative means such as chemical vapor deposition are used in the preparation of insulating films in many industries to obtain acceptable coating efficiencies, although this is often accompanied by impurities, contamination and other issues. RF magnetron sputtering is mostly used in basic scientific research regardless of cost.

In fact, careful analysis with knowledge of plasma physics reveals that RF magnetron sputtering is not a reasonable solution. The presence of a magnetic field near the target results in a whirling motion of the electrons that suppresses the electron's response to the RF electric field, thereby inhibiting its absorption of RF energy. On the one hand, the ionization is weakened, and on the other hand, the self-bias effect is weakened, so that the energy and flux of the ions bombarding the target cannot be effectively increased. This is why the RF magnetron sputtering deposition efficiency cannot be significantly improved.

SUMMARY OF THE INVENTION

An advantage of the present invention is to provide a sputter coating apparatus and apparatus and a sputter coating assembly thereof, which do not require the formation of a magnetic field to increase plasma density and avoid electron cyclotrons due to the presence of a magnetic field.

An advantage of the present invention is to provide a sputtering coating device and equipment and its sputtering coating assembly, which can form high-density plasma in the space near the target through the cooperation of the discharge coil and the electrode, so as to rapidly form a film layer.

An advantage of the present invention is to provide a sputter coating apparatus and equipment and a sputter coating assembly thereof, which can form a film of insulating or non-insulating material, that is, the type of film material is less restricted.

One advantage of the present invention is to provide a sputtering coating device and equipment and its sputtering coating assembly, which do not use a magnetic field to work, avoid spatial inhomogeneity caused by magnetically confined plasma, and form a more uniform film.

One advantage of the present invention is to provide a sputtering coating device and equipment and its sputtering coating assembly, wherein the electrodes, the target and the discharge coil cover each other in a larger area, so that the target is etched uniformly and the target utilization rate is high.

An advantage of the present invention is to provide a sputtering coating device and equipment and a sputtering coating assembly thereof, which utilize a dielectric layer to isolate electrodes and targets, so that different types of targets can be efficiently deposited on the surface of the substrate without The electrical properties of the target affect its deposition efficiency.

It is an advantage of the present invention to provide a sputter coating apparatus and apparatus and sputter coating assembly thereof, wherein in one embodiment, it utilizes a spacer sleeve to confine the coil discharge area, and to make the electrode discharge area and the discharge area of the discharge coil positive It interacts with the raw material gas after binding.

An advantage of the present invention is to provide a sputter coating apparatus and apparatus and its sputter coating assembly, wherein the sputter deposition area is located near the electrode and the discharge coil, such as above, below, vertically, obliquely upward or obliquely downward.

It is an advantage of the present invention to provide a sputter coating apparatus and apparatus, and sputter coating assembly therefor, wherein, in one embodiment, the deposition area is located in the parallel area of the electrode and the coil to facilitate multi-layering or batching around the target Coating is performed.

An advantage of the present invention is to provide a sputter coating apparatus and apparatus and a sputter coating assembly thereof, wherein in one embodiment, a plurality of sputter deposition regions are formed in parallel to facilitate sputter deposition in large areas or in batches Coating.

In order to achieve at least one of the above advantages, an aspect of the present invention provides a sputtering coating device, the sputtering coating device is used to bombard a target to form a film layer on the surface of a substrate by means of sputtering coating, the Sputter coating equipment includes:

a reaction cavity, the reaction cavity has a reaction cavity;

an electrode assembly; and

A discharge coil assembly, the electrode assembly and the discharge coil assembly are arranged in the reaction chamber, during sputtering coating, the substrate is accommodated in the reaction chamber, and the target is arranged in the reaction chamber The electrode assembly, the electrode assembly and the discharge coil assembly are electrically connected to a radio frequency power supply, and the working radio frequency current is provided for the electrode assembly and the discharge coil assembly through the radio frequency power supply, so that the base Surface deposition to form a film.

The sputtering coating device according to an embodiment, wherein the electrode assembly comprises a discharge electrode and a dielectric layer, the dielectric layer is stacked on the discharge side of the discharge electrode, and the target is stacked arranged on the dielectric layer.

The sputtering coating device according to an embodiment, wherein the electrode assembly includes a discharge electrode, and the target is directly disposed on the discharge side of the discharge electrode.

The sputtering coating device according to one embodiment, wherein the discharge coil assembly is located under the electrode assembly, and the base body is adapted to be disposed under the discharge coil assembly.

The sputter coating apparatus according to one embodiment, wherein the discharge coil assembly includes a coil and an isolation sleeve, and the coil is wound around the isolation sleeve.

The sputtering coating device according to an embodiment, wherein the isolation sleeve has a first opening, a second opening and an isolation space, and the isolation space communicates with the first opening and the second opening Externally, the first opening faces the target, and the second opening faces the substrate.

The sputtering coating device according to an embodiment, wherein one end of the electrode assembly and the discharge coil assembly are commonly connected to the output end of the radio frequency power supply, and the other end of the reaction chamber and the discharge coil assembly are connected together Commonly connected to the ground terminal of the RF power supply.

The sputtering coating device according to an embodiment, wherein the central axis of the discharge coil assembly is perpendicular to the electrode assembly.

The sputtering coating device according to an embodiment, wherein the discharge coil assembly includes a coil, the coil is a plane spiral coil, and the coil is disposed on one side of the discharge electrode.

The sputtering coating apparatus according to an embodiment, wherein the electrode assembly has an inner space, and the discharge coil assembly is disposed in the inner space.

The sputtering coating device according to an embodiment, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer surrounds the outside of the discharge electrode, and the target is disposed outside the dielectric layer .

The sputtering coating device according to an embodiment, wherein the electrode assembly includes a discharge electrode, and the target is directly disposed on the discharge side of the discharge electrode.

The sputtering coating apparatus according to an embodiment, wherein the discharge coil assembly and the electrode assembly are coaxially arranged.

The sputtering coating device according to an embodiment, wherein the discharge electrode includes a plurality of electrode units, the annular arrangement of the plurality of electrode units forms the inner space, and a space is provided between two adjacent electrode units. There is a gap.

According to an embodiment of the sputter coating apparatus, an insulating material is filled in the gap.

The sputtering coating device according to an embodiment, wherein the dielectric layer is a continuous cylindrical structure.

Another aspect of the present invention provides a sputtering coating apparatus, which is used for bombarding a target to form a film layer on a substrate surface by means of sputtering coating, the sputtering coating apparatus comprising:

a reaction cavity, the reaction cavity has a reaction cavity;

an electrode assembly;

a discharge coil assembly; and

a radio frequency power supply, the electrode assembly and the discharge coil assembly are arranged in the reaction chamber of the reaction chamber, the target material is arranged in the electrode assembly, and during sputtering coating, the substrate is accommodated in the reaction chamber, the electrode assembly and the discharge coil assembly are electrically connected to the radio frequency power supply, and the radio frequency power supply provides the electrode assembly and the discharge coil assembly with working radio frequency current , to deposit and form a film layer on the surface of the substrate.

The sputtering coating apparatus according to an embodiment, wherein the electrode assembly comprises a discharge electrode and a dielectric layer, the dielectric layer is laminated on the discharge side of the discharge electrode, and the target is laminated arranged on the dielectric layer.

The sputtering coating apparatus according to one embodiment, wherein the electrode assembly includes a discharge electrode, and the target is directly disposed on the discharge side of the discharge electrode.

The sputter coating apparatus according to one embodiment, wherein the discharge coil assembly includes a coil and a spacer sleeve, the coil is wound around the spacer sleeve.

The sputtering coating apparatus according to an embodiment, wherein the discharge coil assembly includes a coil, the coil is a planar spiral coil, and the coil is disposed on one side of the electrode assembly.

The sputtering coating apparatus according to one embodiment, wherein the electrode assembly has an inner space, and the discharge coil assembly is disposed in the inner space.

The sputtering coating apparatus according to an embodiment, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer surrounds the outside of the discharge electrode, and the target is disposed outside the dielectric layer .

Another aspect of the present invention provides a sputtering coating discharge assembly suitable for being installed in a reaction chamber for sputtering coating a substrate in the reaction chamber, the sputtering Coating components include:

an electrode assembly; and

A coil, during sputtering coating, the target is set on the electrode assembly, the coil is set on the target, the electrode assembly and the coil are electrically connected to a radio frequency power supply, through the The radio frequency power supply provides working radio frequency current for the electrode assembly and the coil, so as to deposit and form a film layer on the surface of the substrate.

The sputtering coating discharge assembly according to an embodiment, wherein the electrode assembly comprises a discharge electrode and a dielectric layer, the dielectric layer is laminated on the discharge side of the discharge electrode, and the target is laminated A layer is disposed on the dielectric layer.

The sputtering coating discharge assembly according to one embodiment, wherein the electrode assembly includes a discharge electrode, and the target is directly disposed on the discharge side of the discharge electrode.

The sputtering coating discharge assembly according to one embodiment, wherein the coil is a flat spiral coil, and the coil is disposed on one side of the discharge electrode.

Description of drawings

FIG. 1 is a schematic diagram of a sputtering coating apparatus according to a first embodiment of the present invention.

2A-2B are schematic diagrams of relative positions of the electrode assembly and the discharge coil assembly in different embodiments of the sputter coating apparatus according to the first embodiment of the present invention.

3A-3B are schematic diagrams of relative positions of the discharge coil assembly and the target of the sputter coating apparatus according to the first embodiment of the present invention in different implementations.

FIG. 4 is a schematic diagram of a sputtering coating apparatus according to a second embodiment of the present invention.

5 is a schematic diagram of a multi-layer support of a sputtering coating apparatus according to a second embodiment of the present invention.

FIG. 6 is a schematic diagram of a sputtering coating apparatus according to a third embodiment of the present invention.

7 is a schematic diagram of a sputtering coating apparatus according to a fourth embodiment of the present invention.

FIG. 8 is a sputter coating apparatus according to a fifth embodiment of the present invention.

Detailed ways

The following description serves to disclose the invention to enable those skilled in the art to practice the invention. The preferred embodiments described below are given by way of example only, and other obvious modifications will occur to those skilled in the art. The basic principles of the invention defined in the following description may be applied to other embodiments, variations, improvements, equivalents, and other technical solutions without departing from the spirit and scope of the invention.

It should be understood by those skilled in the art that in the disclosure of the present invention, the terms "portrait", "horizontal", "upper", "lower", "front", "rear", "left", "right", " The orientation or positional relationship indicated by vertical, horizontal, top, bottom, inner, outer, etc. is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and to simplify the description, rather than to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus the above terms should not be construed as limiting the invention.

It should be understood that the term "a" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element may be one. The number may be plural, and the term "one" should not be understood as a limitation on the number.

References to "one embodiment," "an embodiment," "example embodiment," "various embodiments," "some embodiments," etc. indicate that such descriptions of embodiments of the invention may include a particular feature, structure, or characteristic , but not every embodiment necessarily includes that feature, structure, or characteristic. Furthermore, some embodiments may have some, all or none of the features described for other embodiments.

FIG. 1 is a schematic diagram of a sputtering coating apparatus 1 according to a first embodiment of the present invention. 2A-2B are schematic diagrams of relative positions of the electrode assembly and the discharge coil assembly in different embodiments of the sputter coating apparatus according to the first embodiment of the present invention. 3A-3B are schematic diagrams of relative positions of the discharge coil assembly and the target of the sputter coating apparatus according to the first embodiment of the present invention in different implementations.

Referring to FIG. 1 , the present invention provides a sputtering coating device 1 , the sputtering coating device 1 bombards the surface of a target 200 with energetic particles, so that the bombarded particles are deposited on the surface of a substrate 100 to form a coating or film. That is to say, the sputtering coating apparatus 1 forms a thin film on the surface or predetermined position of the substrate 100 by using the principle of the sputtering coating process.

The sputtering coating device 1 is suitable for forming an insulating film layer or a non-insulating film layer by means of sputtering coating, for example, but not limited to, coatings formed by metals, alloys, and conductive compounds, and examples of raw materials for insulating coatings, but not limited to : silicon oxide, aluminum oxide, zinc oxide, titanium oxide, zirconium oxide, aluminum nitride, silicon nitride, boron nitride, diamond-like carbon; conductive coating examples but not limited to: titanium nitride, chromium nitride, indium oxide Tin, yttrium barium copper oxide, the target material 200 is exemplified but not limited to silicon, aluminum, titanium, chromium, graphite, boron nitride, indium tin oxide, yttrium barium copper oxide.

The sputtering coating device 1 includes a reaction chamber 10 , an electrode assembly 20 and a discharge coil assembly 30 . The reaction chamber 10 has a reaction chamber 101, and the reaction chamber 101 is used to provide a working space for sputtering coating. During sputtering coating, the target 200 and the substrate 100 are accommodated in the reaction chamber 101 , and the target 200 is mounted on the electrode assembly 20 . The electrode assembly 20 and the discharge coil assembly 30 are arranged in the reaction chamber 101 of the reaction chamber 10 to facilitate sputtering through the coordinated discharge of the electrode assembly 20 and the discharge coil assembly 30 Shot coating. Preferably, the reaction chamber 10 is a metal chamber, so as to cooperate with the electrode assembly 20 to discharge.

The reaction chamber 101 of the reaction chamber 10 is adapted to be supplied with reaction raw materials, plasma source gas or other auxiliary raw materials such as inert gases required for coating. That is to say, during the sputtering coating process, the materials constituting the target 200 and the introduced reactive gas raw materials are co-deposited to form a film layer.

The electrode assembly 20 and the discharge coil assembly 30 of the sputtering coating device 1 can be electrically connected to a radio frequency power source 40 , and the radio frequency power source 40 provides work for the electrode assembly 20 and the discharge coil assembly 30 the radio frequency current. In an embodiment of the present invention, the electrode assembly 20 and the discharge coil assembly 30 are commonly connected to one of the radio frequency power sources 40, that is, the electrode assembly 20 and the discharge coil assembly 30 share a power source, In other words, they are connected in parallel and have a uniform operating potential. In another implementation of the present invention, the electrode assembly 20 and the discharge coil assembly 30 may be electrically connected to two independent radio frequency power sources 40 respectively, that is, the electrode assembly 20 and the discharge coil The components 30 can each be independently controlled. When the electrode assembly 20 and the discharge coil assembly 30 are independently controlled, the electrode assembly 20 and the discharge coil assembly 30 can be controlled by two power sources with different frequencies, for example, the discharge coil assembly 30 is loaded with high The frequency is 13.56MHz-60MHz, and the electrode assembly 20 is loaded with a low frequency of 300kHz-13.56MHz, thereby preventing mutual interference between the two power sources. Preferably, the electrode assembly 20 and the discharge coil assembly 30 share a power source. When the electrode assembly 20 and the discharge coil assembly 30 share a power source, there is no need to control the problem of mutual synchronization between the power sources, and no mutual interference.

It is worth mentioning that the RF power supply 40 may be a component included in the sputtering coating device 1, or may be an independent device, such as a directly purchased device that works with the sputtering coating device 1, The invention is not limited in this regard. The radio frequency power supply 40 and the sputtering coating device 1 constitute a sputtering coating device. The radio frequency power supply 40 can be directly installed in the sputtering coating apparatus 1 or independently configured.

In an embodiment of the present invention, one end of the electrode assembly 20 and the discharge coil assembly 30 are commonly connected to the output end of the radio frequency power supply 40 , and the other end of the reaction chamber 10 and the discharge coil assembly 30 are connected together. One end is commonly connected to the ground end of the radio frequency power supply 40 .

In an embodiment of the present invention, the sputtering coating device 1 can be connected to a feeding device, wherein the feeding device is used to deliver reaction gas into the reaction chamber 101 of the reaction chamber 10 Raw material or plasma source, etc. The reaction chamber 10 can be connected to an air extraction device, wherein the air extraction device is used to extract the gas in the reaction chamber 101 of the reaction chamber 10 to maintain all the gas in the reaction chamber 10 . The reaction chamber 101 is kept within a preset gas pressure range.

The electrode assembly 20 and the discharge coil assembly 30 cooperate with each other to form a sputtering coating assembly. The sputtering coating assembly is disposed in the reaction chamber 101, and the sputtering coating assembly is suitable for being connected to the radio frequency power supply 40 to perform sputtering coating on the surface of the substrate.

The electrode assembly 20 includes a discharge electrode 21 and a dielectric layer 22 , and the dielectric layer 22 is disposed on the discharge electrode 21 . The target 200 is adapted to be attached to the dielectric layer 22. That is, the dielectric layer 22 is disposed between the discharge electrode 21 and the target 200 , or in other words, the dielectric layer 22 isolates the discharge electrode 21 and the target 200 . Further, the dielectric layer 22 and the target 200 are disposed on the discharge side of the discharge electrode 21 .

It is worth mentioning that when the target material 200 is a metal material, if the target material 200 is directly arranged on the discharge electrode 21 , the target material 200 is connected to the discharge electrode 21 and becomes a direct discharge Instead of the excited target material 200, the sputtering process cannot be performed, and the setting of the dielectric layer 22 isolates the metal type or conductive type target material 200 from the discharge electrode 21, so that all The target material 200 is located at a position close to the discharge electrode 21, but is not directly connected to the electrode, so that the discharge electrode 21 can play a better discharge function.

The dielectric layer 22 is used to block the conduction current between the plasma and the discharge electrode 21 , so that a self-bias voltage is generated on the surface of the target material 200 to realize efficient sputtering. Considering the pressure resistance, heat resistance, heat transfer and capacitive coupling efficiency comprehensively, the material of the dielectric layer 22 can be selected from one of alumina, zirconia, boron nitride, quartz, mica, and polytetrafluoroethylene. Preferably, the thickness of the dielectric layer 22 is 0.2-2 mm. When the target 200 is a conductive material, the dielectric layer 22 is indispensable; when the target 200 is an insulating material, it can function as the dielectric layer 22 itself, and the dielectric layer 22 can be eliminated .

The target material 200 is replaceably mounted on the dielectric layer 22 , that is, according to the requirements of the type of coating, different types of target material 200 can be replaced.

In an embodiment of the present invention, the discharge electrode 21 is a planar electrode, that is, the discharge electrode 21 is a planar structure or the discharge region of the discharge electrode 21 is a planar position. Furthermore, when the discharge electrode 21 is in operation, a discharge area is formed below, and the discharge area covers the target 200 .

In an embodiment of the present invention, the dielectric layer 22 is provided on the discharge electrode 21 in a stacked manner, that is, the dielectric layer 22 is also a flat plate material.

The target material 200 is stacked on the dielectric layer 22 , and the target material 200 is a flat plate material. That is to say, the discharge electrode 21, the dielectric layer 22 and the target 200 are stacked in sequence.

In an embodiment of the present invention, the discharge electrode 21 , the dielectric layer 22 and the target 200 are laminated and fixed by a fixing element, and the fixing method of the fixing element is, for example, but not limited to clamping and fixing , squeeze and fix.

The discharge coil assembly 30 is disposed in an adjacent area of the electrode assembly 20, and the adjacent position only needs to be such that the discharge area of the electrode assembly 20 and the discharge area of the discharge coil assembly 30 can reinforce each other. Preferably, in an embodiment of the present invention, the discharge coil assembly 30 is disposed below the electrode assembly 20 , in this way, the discharge area of the discharge coil and the discharge of the electrode assembly 20 There are many positive overlapping regions of the regions, which is beneficial to strengthen the excitation effect on the target material 200 . In another embodiment of the present invention, the discharge coil assembly 30 may also be disposed on the peripheral side of the electrode assembly 20 , for example, in a manner of being staggered from each other or surrounding at the bottom. 2A and 2B are schematic diagrams of relative positions of the electrode assembly 20 and the discharge coil assembly 30 in different embodiments of the sputtering coating apparatus 1 according to the first embodiment of the present invention.

During coating, the base body 100 is disposed below or near the discharge coil assembly 30 . Furthermore, the base body 100 is disposed in the discharge area where the electrode assembly 20 and the discharge coil assembly 30 work together, or in other words, the base body 100 is disposed in the discharge area of the electrode assembly 20 and the discharge area. The area where the discharge areas of the coil assembly 30 overlap, so that the radio frequency discharge effect of the electrode assembly 20 and the discharge effect of the discharge coil assembly 30 can cooperate to act on the target 200, so as to efficiently excite the target The atoms of the substrate 200 are removed, and plasma with a high density is rapidly formed, that is, a film layer is rapidly formed on the surface of the substrate 100 .

The discharge coil assembly 30 includes a coil 31 and an isolation sleeve 32 , and the coil 31 is spirally wound around the isolation sleeve 32 . Preferably, the isolation sleeve 32 is made of insulating material, such as ceramic material. The isolation sleeve 32 confines and isolates the inner and outer spaces of the isolation sleeve 32 . The discharge coil assembly 30 is arranged substantially vertically below the discharge electrode 21 . In other words, the central axis of the coil 31 is perpendicular to the electrode assembly 20.

In one embodiment of the present invention, the isolation sleeve 32 has a first opening 3201 , a second opening 3202 and an isolation space 3203 , the first opening 3201 and the second opening 3202 are located at two opposite sides. On the side, the isolation space 3203 communicates with the outside through the first opening 3201 and the second opening 3202, respectively. The first opening 3201 is opposite to the electrode assembly 20 , that is, the discharge area of the electrode assembly 20 faces the interior of the isolation space 3203 . In other words, the isolation sleeve 32 isolates and confines the discharge area of the electrode assembly 20 within the isolation space 3203 .

The spacer sleeve 32 provides a winding attachment position for the coil 31 while confining the discharge area. Moreover, in the isolation space 3203 , the discharge area of the electrode assembly 20 and the discharge area of the coil 31 overlap. In other words, during operation, both the discharge effect of the electrode assembly 20 and the discharge effect of the coil 31 are generated in the isolation space 3203 .

The base body 100 faces the second opening 3202 , or in other words, the base body 100 is disposed near the second opening 3202 . Furthermore, the base body 100 is disposed adjacent to the position below the second opening 3202 .

In an embodiment of the present invention, the isolation sleeve 32 is a cylindrical shape extending in a straight line, and the positions of the electrode assembly 20 , the target material 200 , the isolation sleeve 32 and the coil 31 are along the gravity Orientation setting or arrangement along the vertical direction. The sputter deposition area is located in the vicinity of the electrode and the discharge coil, such as above, below, vertically, diagonally upward or diagonally downward.

In other embodiments of the present invention, the electrode assembly 20 , the discharge coil assembly 30 and the base body 100 may also be disposed in a staggered manner.

2A and 2B are schematic diagrams of relative positions of the discharge coil assembly 30 and the target material 200 in different embodiments of the sputter coating apparatus 1 according to the first embodiment of the present invention. In one embodiment, referring to FIG. 1 , the base body 100 is disposed under the discharge coil, or in other words, the base body 100 is disposed under the second opening 3202 . Referring to Fig. 2A, at least two of the discharge coil assemblies 30 are arranged in a staggered position below the electrode assembly 20, such as a surrounding position or a symmetrical distribution. Referring to FIG. 2B , at least two of the discharge coil assemblies 30 are disposed below the electrode assemblies 20 . In another embodiment, referring to FIG. 3A , the base body 100 is disposed at a position below the side of the discharge coil assembly 30 . Referring to FIG. 3B , a plurality of the base bodies 100 are surrounded under the discharge coil assembly 30 .

It is worth mentioning that FIG. 1 , FIGS. 2A-2B and FIGS. 3A-3B respectively illustrate the relative positional relationship between the discharge assembly and the discharge coil assembly 30 and the discharge coil assembly 30 and the target 200 in different embodiments. In the embodiment, the positional relationship among the discharge electrode 21, the coil 31 and the target material 200 may also be a combination of the above-mentioned arrangements or other arrangements. On the basis of not departing from the basic interaction principle of the present invention, the present invention There are no restrictions in this regard.

In an embodiment of the present invention, the discharge electrode 21 and the coil 31 are connected to a water cooling device to avoid overheating of the discharge electrode 21 and the coil 31 . A shielding layer is provided on the periphery of the coil 31 to prevent the coil 31 from discharging externally.

In an embodiment of the present invention, the overall assembly method of the sputtering coating device 1 is as follows:

The RF power source 40 is installed outside the reaction chamber 10 , and the discharge electrode 21 , the dielectric layer 22 , the target 200 , the coil 31 and the isolation sleeve 32 are all installed in the reaction chamber 10 . inside the reaction chamber 10 . The dielectric layer 22 and the target 200 are sequentially installed under the discharge electrode 21 . The spacer sleeve 32 is installed at a position below the target 200 , and the coil 31 is wound outside the spacer sleeve 32 . One end of the electrode and the coil 31 are commonly connected to the output end of the radio frequency power supply 40 outside the reaction chamber 10 . The other ends of the reaction chamber 10 and the coil 31 are commonly connected to the ground end of the radio frequency power supply 40 . The substrate 100 is disposed under the coil 31 , and faces the target 200 at a certain distance from the target 200 , so that the sputtered atoms of the target 200 are deposited on the surface of the substrate 100 to form a thin film.

In one embodiment of the present invention, the coating working process of the sputtering coating device 1 is:

During sputtering coating, the reaction chamber 10 is evacuated and filled with inert gas and reactive gas, and the radio frequency power supply 40 is activated. On the one hand, the radio frequency current in the coil 31 is inside the isolation sleeve 32 The space induction discharge close to the target 200 generates high-density plasma; on the other hand, the radio frequency voltage on the electrode and the plasma in the space near the target 200 work together, and the surface of the target 200 generates self-generated plasma. Bias voltage, the ions of the accelerated plasma bombard the target 200, the atoms of the target 200 are sputtered and fly out, and the sputtered atoms of the target 200 are deposited on the surface of the substrate 100 below. film.

FIG. 4 is a schematic diagram of the sputtering coating apparatus 1 according to the second embodiment of the present invention.

In this embodiment of the present invention, the electrode assembly 20 of the sputtering coating device 1 has an inner space 201 , and the discharge coil assembly 30 is disposed in the inner space 201 . In other words, the electrode assembly 20 surrounds the outside of the coil 31 assembly.

The electrode assembly 20 includes a discharge electrode 21 and a dielectric layer 22 , and the dielectric layer 22 is disposed on the discharge electrode 21 . The target 200 is adapted to be attached to the dielectric layer 22 . That is, the dielectric layer 22 is disposed between the discharge electrode 21 and the target 200 , or in other words, the dielectric layer 22 isolates the discharge electrode 21 and the target 200 . Further, the dielectric layer 22 and the target 200 are disposed on the discharge side of the discharge electrode 21 .

Further, the coil 31 is located inside the discharge electrode 21 , the target 200 is located outside the discharge electrode 21 , and the base 100 is suitable for being disposed in the outer space of the target 200 .

In one embodiment of the present invention, the coil 31 is a solenoid coil, and the coil 31 is generally arranged in parallel with the discharge electrode 21 as a whole, by way of example but not limitation. Both the coil 31 and the discharge electrode 21 are arranged in the vertical direction, that is, in the direction of gravity. In another embodiment of the present invention, the coil 31 is a spiral coil, and the coil 31 is arranged substantially perpendicular to the discharge electrode 21 as a whole. The coils 31 are arranged in a horizontal direction, or the discharge electrodes 21 are arranged in a horizontal direction, and the coils 31 are arranged in a gravity direction or a vertical direction.

The discharge electrode 21 includes a pole plate unit, and a plurality of the pole plate units surround the inner space 201 in isolation. In an embodiment of the present invention, a gap is set between two adjacent electrode plate units, and the gap separates the two electrode plate units to prevent the coil 31 from being inducted in the discharge electrode 21 . Eddy currents. In an embodiment of the present invention, the gap is filled with an insulating material to prevent the coil 31 from inducing eddy currents in the discharge electrode 21 . The two adjacent electrode plate units are electrically connected by wires.

Further, the dielectric layer 22 surrounds the outside of the discharge electrode 21 . Correspondingly, the dielectric layer 22 forms a continuous annular structure and is stacked and disposed outside the discharge electrode 21 .

In one embodiment, the target material 200 is provided in a continuous ring shape, that is, the shape of the target material 200 is substantially the same as the shape of the dielectric layer 22 . In another embodiment, the target material 200 is arranged to be consistent with the shape of the electrode plate unit, such as a long strip, and is arranged outside the dielectric layer 22 at intervals.

In an embodiment of the present invention, the discharge electrode 21 , the dielectric layer 22 and the target 200 are sequentially connected from the inside to the outside into one body, and the coil 31 is installed in the inner part of the electrode assembly 20 In the space 201 , the coil 31 and the discharge electrode 21 are arranged coaxially. The inner space 201 located inside the dielectric layer 22 is isolated from the reaction chamber 101 of the reaction chamber 10 .

In an embodiment of the present invention, the sputtering coating device 1 includes a set of sealing covers 23 , and a set of the sealing covers 23 is sealed and disposed on both ends of the electrode assembly 20 , preferably, the dielectric layer Both ends of 22 protrude out of the discharge electrode 21 , and a group of the sealing caps 23 are connected to both ends of the dielectric layer 22 .

It is worth mentioning that the inner space 201 of the discharge electrode 21 is sealed and isolated from the reaction chamber 101 , so the inner space 201 can be filled with heat-dissipating material or heat-dissipating liquid to dissipate the coil 31 heat generated during work. During the coating operation, the inner space of the dielectric layer 22 is isolated from the reaction chamber 101, and the inner space 201 does not need to be evacuated to avoid the internal discharge of the coil 31; on the other hand, the inner space of the dielectric layer 22 The discharge electrode 21 and the coil 31 therein are cooled to avoid overheating by the cooling air flow.

When the target 200 is a conductive material, the discharge electrode 21 is composed of a plurality of separated electrode units, and the gap extending in the axial direction is provided between two adjacent electrode units; When the target 200 is an insulating material, the discharge electrode 21 may be a cylindrical shape surrounded by the plate-shaped electrode units.

The base body 100 is arranged outside the target material 200, that is, the base body 100 can be arranged around the cylindrical electrode assembly, that is, a larger coating space is formed, which is convenient for batch or large-scale coating. Area coating.

In one embodiment of the present invention, referring to FIG. 5 , the sputtering coating apparatus 1 includes a multi-layer support 50 , and the multi-layer support 50 surrounds the outside of the electrode assembly 20 . A plurality of the base bodies 100 can be placed on the multilayer stent 50 . That is to say, coating can be performed on the outer surrounding space and different heights of the electrode assembly 20 .

In an embodiment of the present invention, the overall assembly method of the sputtering coating device 1 is as follows:

The RF power source 40 is installed outside the reaction chamber 10 , and the discharge electrode 21 , the dielectric layer 22 , the target 200 , the coil 31 and the isolation sleeve 32 are all installed in the reaction chamber 10 . inside the reaction chamber 10 . The electrode units in the shape of a plurality of column plates are enclosed in a cylindrical shape, axial gaps are left between the column plates or filled with insulating materials, and the column plates are communicated with each other by wires. The dielectric layer 22 is a complete cylinder. When the target material 200 is a conductive material, a cylindrical shape is formed by a plurality of column panels, and there are axial gaps between the column panels. When the target material 200 is an insulating material, a plurality of columns can be formed. The panel is enclosed in a cylindrical shape, and it can also be a complete cylinder.

The discharge electrode 21 , the dielectric layer 22 and the target 200 are assembled together from the inside to the outside in sequence. The coil 31 is installed inside the discharge electrode 21 and is coaxial with the discharge electrode 21 ; the inner space of the dielectric layer 22 is isolated from the reaction chamber 101 and is not evacuated. One end of the discharge electrode 21 and the coil 31 is commonly connected to the output end of the radio frequency power source 40 outside the reaction chamber 10; the other end of the reaction chamber 10 and the coil 31 is commonly connected to the The ground terminal of the radio frequency power supply 40. The substrate 100 is disposed outside the target 200 and faces the target 200 at a certain distance away from the target 200 , so that the sputtered atoms of the target 200 are deposited on the surface of the substrate 100 to form a thin film.

In an embodiment of the present invention, the coating process of the sputter coating device 1 is as follows:

During sputtering coating, the reaction chamber 10 is evacuated and filled with inert gas and reactive gas, and the radio frequency power supply 40 is activated. On the one hand, the radio frequency current in the coil 31 is outside the target 200 . Induction discharge generates high-density plasma; on the other hand, the radio frequency voltage on the discharge electrode 21 and the plasma in the space near the target 200 work together to generate a self-bias voltage on the surface of the target 200 , the ions of the accelerated plasma bombard the target 200 , sputter the atoms of the target 200 and fly out, and the sputtered atoms of the target 200 are deposited on the surface of the substrate 100 to form a thin film.

FIG. 6 is a schematic diagram of a sputtering coating apparatus 1 according to a third embodiment of the present invention.

In this embodiment of the present invention, different from the first embodiment, the sputtering coating device 1 includes two groups of electrode assemblies 20 and discharge coil assemblies 30, which work cooperatively to increase the overall coating area.

Further, two groups of the electrode assemblies 20 and the discharge coil assemblies 30 are arranged in parallel. That is to say, one end of the two groups of electrode assemblies 20 is commonly connected to the output end of the radio frequency power source 40 , one end of the two groups of the discharge coil assemblies 30 is connected to the output end of the radio frequency power source 40 respectively, and the reaction chamber 10 Connected to the ground terminal of the radio frequency power supply 40 , and the other ends of the two sets of the discharge coil assemblies 30 are connected to the ground terminal of the radio frequency power supply 40 .

Further, the two targets 200 of the two groups of electrode assemblies 20 are coplanarly arranged close to each other, and the two coils 31 of the two discharge coil assemblies 30 are wound in opposite directions to reduce the series inductance.

In this embodiment of the present invention, two groups of the electrode assemblies 20 and discharge coils in parallel are taken as an example for description. In other embodiments of the present invention, more groups of the electrode assemblies 20 and discharge coils may be included. , expand horizontally in a similar way, and the coils 31 that are close to each other are wound in opposite directions.

FIG. 7 is a schematic diagram of a sputtering coating apparatus 1 according to a fourth embodiment of the present invention.

In this embodiment of the present invention, the difference from the above-mentioned first embodiment is that the dielectric layer 22 is not provided under the discharge electrode 21 . That is, the target 200 is directly disposed under the discharge electrode 21 . This embodiment is suitable for insulating material coating.

Similar changes can also be made to the above-mentioned second embodiment, and the dielectric layer 22 is eliminated for coating of insulating material.

FIG. 8 is a schematic diagram of a sputtering coating apparatus 1 according to a fifth embodiment of the present invention.

In this embodiment of the present invention, the discharge coil assembly 30 includes a coil 31 which is a planar solenoid. The plane coil is directly disposed on one side of the discharge electrode 21 . Furthermore, the coil 31 is detachably fixed on the non-discharge side of the discharge electrode 21 , in other words, the target 200 and the coil 31 are located on two sides of the discharge electrode 21 respectively.

Further, the discharge electrode 21 includes a pole plate unit, and a plurality of the pole plate units are arranged in isolation. In an embodiment of the present invention, a gap is set between two adjacent electrode plate units, and the gap separates the two electrode plate units to prevent the coil 31 from being inducted in the discharge electrode 21 . Eddy currents. In an embodiment of the present invention, the gap is filled with an insulating material to prevent the coil 31 from inducing eddy currents in the discharge electrode 21 . The two adjacent electrode plate units are electrically connected by wires.

It is worth mentioning that, in this embodiment of the present invention, the discharge electrode 21 assembly 20 and the coil 31 are integrally arranged, thereby forming an integrally movable assembly, which is convenient to be integrally installed in different working positions , to avoid providing additional installation conditions for the coil 31 .

The electrode assembly 20 and the coil 31 of the discharge coil assembly 30 cooperate with each other to form a sputtering coating assembly. The sputtering coating assembly is disposed in the reaction chamber 101, and the sputtering coating assembly is adapted to be connected to the radio frequency power supply 40 to perform sputtering coating on the surface of the substrate.

It can be generally understood from the above embodiments that, compared with the sputtering coating method of the prior art, the technical solution of the present invention has many advantages:

From the working principle, it is not necessary to form a magnetic field to increase the plasma density and avoid electron cyclotron caused by the presence of the magnetic field.

Through the cooperation of the discharge coil and the electrode, a high-density plasma is formed in the space near the target to rapidly form a film.

The film layer of insulating or non-insulating material can be formed, that is, the type of film material is less restricted;

It does not use a magnetic field to work, avoids the spatial inhomogeneity generated by the magnetically confined plasma, and forms a more uniform film.

The electrodes, the target and the discharge coil cover each other in a large area, so that the target is etched uniformly and the utilization rate of the target is high.

The electrode and the target are separated by a dielectric layer, so that different types of targets can be efficiently deposited on the surface of the substrate without affecting the deposition efficiency due to the electrical properties of the target.

A spacer sleeve is used to confine the discharge area of the coil, and the electrode discharge area and the discharge area of the discharge coil are positively combined and deposited directly on the surface of the substrate.

In one embodiment, the sputter deposition area is located below the electrodes and the discharge coil, and the coating is planarized in the direction of gravity.

In one embodiment, the deposition area is located parallel to the electrodes and coils to facilitate multi-layer or batch coating around the target.

In one embodiment, a plurality of sputter deposition regions are formed in parallel to facilitate sputter deposition coating in a large area or in batches.

It should be understood by those skilled in the art that the embodiments of the present invention shown in the above description and the accompanying drawings are only examples and do not limit the present invention. The objects of the present invention have been fully and effectively achieved. The functional and structural principles of the present invention have been shown and described in the embodiments, and the embodiments of the present invention may be modified or modified in any way without departing from the principles.

Claims (28)

A sputtering coating device, which is used for bombarding a target to form a film layer on the surface of a substrate by means of sputtering coating, characterized in that the sputtering coating device comprises: a reaction cavity, the reaction cavity has a reaction cavity; an electrode assembly; and A discharge coil assembly, the electrode assembly and the discharge coil assembly are arranged in the reaction chamber, during sputtering coating, the substrate is accommodated in the reaction chamber, and the target is arranged in the reaction chamber The electrode assembly, the electrode assembly and the discharge coil assembly are electrically connected to a radio frequency power supply, and the working radio frequency current is provided for the electrode assembly and the discharge coil assembly through the radio frequency power supply, so that the base Surface deposition to form a film. The sputtering coating apparatus according to claim 1, wherein the electrode assembly comprises a discharge electrode and a dielectric layer, the dielectric layer is laminated on the discharge side of the discharge electrode, and the target is laminated arranged on the dielectric layer. The sputtering coating apparatus according to claim 1, wherein the electrode assembly comprises a discharge electrode, and the target is directly disposed on the discharge side of the discharge electrode. The sputtering coating apparatus of claim 1, wherein the discharge coil assembly is located below the electrode assembly, and the base body is adapted to be disposed below the discharge coil assembly. The sputter coating apparatus according to any one of claims 1-4, wherein the discharge coil assembly comprises a coil and an isolation sleeve, and the coil is wound around the isolation sleeve. The sputtering coating apparatus according to claim 5, wherein the isolation sleeve has a first opening, a second opening and an isolation space, and the isolation space communicates with the first opening and the second opening Externally, the first opening faces the target, and the second opening faces the substrate. The sputtering coating device according to any one of claims 1-4, wherein one end of the electrode assembly and the discharge coil assembly are commonly connected to the output end of the radio frequency power supply, the reaction chamber and the discharge coil The other end of the component is commonly connected to the ground terminal of the radio frequency power supply. The sputtering coating device according to any one of claims 1-4, wherein the central axis of the discharge coil assembly is perpendicular to the electrode assembly. The sputtering coating apparatus according to any one of claims 1-4, wherein the discharge electrode assembly, the discharge coil assembly and the base body are arranged in a vertical direction. The sputtering coating apparatus according to any one of claims 1 to 4, wherein the discharge coil assembly comprises a coil, the coil is a planar spiral coil, and the coil is disposed on one side of the electrode assembly. The sputtering coating apparatus according to claim 1, wherein the electrode assembly has an inner space, and the discharge coil assembly is disposed in the inner space. The sputtering coating device according to claim 11, wherein the electrode assembly comprises a discharge electrode and a dielectric layer, the dielectric layer surrounds the outer side of the discharge electrode, and the target material is arranged on the outer side of the dielectric layer . The sputtering coating apparatus according to claim 11, wherein the electrode assembly comprises a discharge electrode, and the target is directly disposed on the discharge side of the discharge electrode. The sputtering coating device according to any one of claims 12-13, wherein the discharge coil assembly and the electrode assembly are arranged coaxially. The sputtering coating device according to any one of claims 12-13, wherein the discharge electrode comprises a plurality of electrode units, the plurality of electrode units are annularly arranged to form the inner space, and two adjacent electrodes are There is a gap between the units. 16. The sputter coating apparatus of claim 15, wherein an insulating material is filled in the gap. The sputtering coating device according to any one of claims 12, wherein the dielectric layer is a continuous cylindrical structure. A sputtering coating equipment, which is used for bombarding a target to form a film layer on a substrate surface by means of sputtering coating, characterized in that, the sputtering coating equipment comprises: a reaction cavity, the reaction cavity has a reaction cavity; an electrode assembly; a discharge coil assembly; and a radio frequency power supply, the electrode assembly and the discharge coil assembly are arranged in the reaction chamber of the reaction chamber, the target material is arranged in the electrode assembly, and during sputtering coating, the substrate is accommodated in the reaction chamber, the electrode assembly and the discharge coil assembly are electrically connected to the radio frequency power supply, and the radio frequency power supply provides the electrode assembly and the discharge coil assembly with working radio frequency current , to deposit and form a film layer on the surface of the substrate. The sputtering coating apparatus according to claim 18, wherein the electrode assembly comprises a discharge electrode and a dielectric layer, the dielectric layer is laminated on the discharge side of the discharge electrode, and the target is laminated arranged on the dielectric layer. 19. The sputtering coating apparatus of claim 18, wherein the electrode assembly comprises a discharge electrode, and the target is directly disposed on the discharge side of the discharge electrode. The sputter coating apparatus according to any one of claims 18-20, wherein the discharge coil assembly comprises a coil and an isolation sleeve, the coil is wound around the isolation sleeve. The sputtering coating apparatus according to any one of claims 18-20, wherein the discharge coil assembly comprises a coil, the coil is a planar solenoid, and the coil is disposed on one side of the electrode assembly. The sputtering coating apparatus according to claim 18, wherein the electrode assembly has an inner space, and the discharge coil assembly is disposed in the inner space. The sputtering coating apparatus according to claim 23, wherein the electrode assembly comprises a discharge electrode and a dielectric layer, the dielectric layer surrounds the outside of the discharge electrode, and the target material is disposed outside the dielectric layer . A sputtering coating discharge assembly, the sputtering coating discharging assembly is suitable for being installed in a reaction chamber to perform sputtering coating on a substrate in the reaction chamber, wherein the sputtering coating assembly comprises: an electrode assembly; and A coil, during sputtering coating, a target is set on the electrode assembly, the coil is set on the target, the electrode assembly and the coil are electrically connected to a radio frequency power supply, through the A radio frequency power supply provides working radio frequency current for the electrode assembly and the coil, so as to deposit and form a film layer on the surface of the substrate. The sputtering coating discharge assembly according to claim 25, wherein the electrode assembly comprises a discharge electrode and a dielectric layer, the dielectric layer is laminated on the discharge side of the discharge electrode, and the target is laminated A layer is disposed on the dielectric layer. The sputtering coating discharge assembly of claim 25, wherein the electrode assembly comprises a discharge electrode, and the target is directly disposed on the discharge side of the discharge electrode. The sputtering-coated discharge assembly according to any one of claims 26-27, wherein the coil is a planar coil, and the coil is disposed on one side of the discharge electrode.

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