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WO2022017678A1 - Procédé de fonctionnement d'un système optique pour une microlithographie et système optique - Google Patents

Procédé de fonctionnement d'un système optique pour une microlithographie et système optique Download PDF

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Publication number
WO2022017678A1
WO2022017678A1 PCT/EP2021/065590 EP2021065590W WO2022017678A1 WO 2022017678 A1 WO2022017678 A1 WO 2022017678A1 EP 2021065590 W EP2021065590 W EP 2021065590W WO 2022017678 A1 WO2022017678 A1 WO 2022017678A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical system
mirror
mirror elements
tilt angle
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2021/065590
Other languages
German (de)
English (en)
Inventor
Hubert Holderer
Christian Koerner
Christian Illigmann
Markus Holz
Stefan Schmitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of WO2022017678A1 publication Critical patent/WO2022017678A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Definitions

  • the invention relates to a method for operating an optical system for microlithography and an optical system.
  • Microlithography is used to produce microstructured components, such as integrated circuits or LCDs, for example.
  • the microlithographic process is carried out in what is known as a projection exposure system, which has an illumination device and a projection lens.
  • a substrate e.g. a silicon wafer
  • a light-sensitive layer photoresist
  • mirrors are used as optical components for the imaging process due to the lack of availability of suitable light-transmitting refractive materials.
  • facet mirrors in the form of field facet mirrors and pupil facet mirrors as beam-guiding components
  • Such facet mirrors are constructed from a large number of mirror elements or mirror facets, each of which can be designed to be tiltable via solid-body joints for the purpose of adjustment or also for the realization of specific illumination angle distributions.
  • These mirror facets can in turn comprise a plurality of micromirrors.
  • mirror arrangements e.g. which include a variety of independently adjustable mirror elements.
  • a problem that occurs in practice is that the components present in the lighting device or in the projection lens, which may also include a carrier of the mirror elements or mirror facets, among other things, due to absorption of the radiation emitted by the EUV light source, heat up and experience the associated thermal expansion or deformation.
  • a thermally induced deformation of the carrier of the mirror elements may lead to different changes in the respective tilted position of the individual elements Mirror elements or mirror facets, which in turn can impair the imaging properties of the optical system.
  • a method for operating an optical system for microlithography having a light source and a mirror arrangement with a plurality of mirror elements mechanically connected to a support structure, and these mirror elements having actuators assigned to each of the mirror elements at tilt angles that can be set independently of one another can be adjusted to generate a desired light distribution of the light emanating from the mirror arrangement, has the following steps:
  • the invention is based in particular on the concept, in an optical system with a mirror arrangement of mirror elements or mirror facets (e.g. a field facet mirror) to use the already existing actuability of the individual mirror elements in order to dynamically compensate for undesirable, thermally induced (in particular due to a deformation of a carrier of the mirror elements) changes in the respective tilted position of the mirror elements during operation of the optical system.
  • a mirror arrangement of mirror elements or mirror facets e.g. a field facet mirror
  • the invention is initially based on the consideration that, in principle, both the temperature distribution resulting from the operation of such an optical system for a given light source power in the area of the mirror arrangement and the deformation pattern resulting from this temperature distribution are predictable and thus using the existing actuators can be taken into account when setting the tilt angle of the mirror elements for dynamic adjustment of the corresponding tilt angle setpoint values during operation.
  • the invention has the further advantage that proper operation of the mirror arrangement or the optical system is already ensured during the above-mentioned start phase (i.e. immediately after the light source is switched on ) can be guaranteed, since the temperature distributions or deformation patterns resulting in this starting phase (i.e. after different switch-on times of the light source) are determined in advance, for example on the side of a carrier of the mirror elements, and with regard to the adjustment according to the invention of the tilt angle setpoint values for the individual mirror elements Mirror arrangement can be taken into account.
  • the respective settings of the mirror elements are recalibrated during a temporary interruption in the operation of the optical system.
  • the time required to change the wafer in a projection exposure system can be used to adjust the tilted position of all mirror elements in such a way that they insofar as "collected” errors in the tilt angle) direct the incident light in the correct direction, so that when the operation of the optical system is resumed, the tilt angle position can be corrected or the tilt angle setpoint values modified only with regard to the thermal influences occurring after the interruption to operation has.
  • the method also has the step of carrying out a temperature measurement at at least one position in the optical system using at least one temperature sensor, with the modification of the set tilt angle also taking place as a function of the result of this temperature measurement.
  • the method also has the step of carrying out a distance measurement at at least one position in the optical system, with the modification of the set tilt angle also taking place as a function of the result of this distance measurement.
  • a distance measurement at at least one position in the optical system, with the modification of the set tilt angle also taking place as a function of the result of this distance measurement.
  • a measurement of the respective (temperature-dependent) distance between a magnet and a drive and sensor unit, and this distance can then be used as an indirect measure of the current temperature of the relevant mirror element.
  • the method also has the step of using operating parameters and/or sensor data from sensors present at at least one position in the optical system to teach a machine learning algorithm, with the modification of the set tilt angle also depending on the result of this learned algorithm he follows.
  • the at least one sensor is selected from the group consisting of energy sensors, temperature sensors, acceleration sensors, imaging sensors and distance sensors.
  • the operating parameters can include, for example, target values for the tilt angles of the mirror elements, values for the power of the light source and/or values for the ambient pressure in the vacuum chamber of the optical system.
  • Machine learning can include supervised learning, semi-supervised learning, or unsupervised learning.
  • the mirror arrangement is a field facet mirror.
  • the optical system is an illumination device of a microlithographic projection exposure system.
  • the optical system is designed for a working wavelength of less than 250 nm, in particular less than 200 nm.
  • the optical system is designed for a working wavelength of less than 30 nm, in particular less than 15 nm.
  • the invention also relates to an optical system for microlithography, which is designed to carry out a method having the features described above
  • control arrangement which, on the basis of the setpoint tilt angles supplied to the control arrangement, transmits control signals to the actuators assigned in each case to the mirror elements
  • this control arrangement is configured to dynamically adapt the control signals on the basis of thermally induced tilt angle changes to be expected during operation of the optical system.
  • FIG. 2-4 flow charts to explain possible embodiments of a method according to the invention.
  • FIG. 5 shows a schematic representation of the possible structure of a microlithographic projection exposure system designed for operation in the EUV
  • FIG. 6 shows a schematic representation of the possible structure of a microlithographic projection exposure system designed for operation in the DUV.
  • FIG. 5 first shows a schematic representation of a projection exposure system 500 designed for operation in EUV, in which the invention can be implemented, for example.
  • an illumination device of the projection exposure system 500 has a field facet mirror 503 and a pupil facet mirror 504 .
  • the light of a light source unit which in the example comprises an EUV light source (plasma light source) 501 and a collector mirror 502, is directed onto the field facet mirror 503 .
  • a first telescope mirror 505 and a second telescope mirror 506 are arranged in the light path after the pupil facet mirror 504 .
  • a deflection mirror 507 is arranged, which deflects the radiation striking it onto an object field in the object plane of a six-mirror 521-526 comprehensive projection lens.
  • a reflective structure-bearing mask 531 is arranged on a mask table 530 at the location of the object field Layer (photoresist) coated substrate 541 on a wafer table 540 be found.
  • the invention is not limited to use in a projection exposure system designed for operation in EUV.
  • the invention can also be advantageously used in a projection exposure system designed for operation in DUV (i.e. at wavelengths less than 250 nm, in particular less than 200 nm) or also in another optical system.
  • FIG. 6 shows a schematic representation of a further possible structure of a microlithographic projection exposure system 600, which is designed for operation at wavelengths in the DUV range (e.g. approx. 193 nm) and also has an illumination device 601 and a projection lens 608.
  • a microlithographic projection exposure system 600 which is designed for operation at wavelengths in the DUV range (e.g. approx. 193 nm) and also has an illumination device 601 and a projection lens 608.
  • the illumination device 601 comprises a light source 602 and an illumination optics symbolized in a highly simplified manner by lenses 603 , 604 and a diaphragm 605 .
  • the working wavelength of the projection exposure system 600 is 193 nm when using an ArF excimer laser as the light source 602.
  • the working wavelength can also be 248 nm when using a KrF excimer laser or 157 nm when using an F2 laser as the light source 602.
  • a mask 607 is arranged in the object plane OP of the projection lens 608 between the illumination device 601 and the projection lens 608 and is held in the beam path by means of a mask holder 606 .
  • the mask 607 has a structure in the micrometer to nanometer range, which is reduced by a factor of 4 or 5, for example, to an image plane IP of the projection lens 608 by means of the projection lens 608 .
  • the projection lens 608 includes a lens arrangement, which is also symbolized in a highly simplified manner by lenses 609 to 612 and defines an optical axis OA.
  • In the image plane IP of the projection lens 608 is positioned by a substrate holder 618 and provided with a light-sensitive layer 615 nes substrate 616, or a wafer, held.
  • an immersion medium 650 which can be deionized water, for example.
  • a light source used in an optical system eg the EUV light source 501 from FIG. 5 or the DUV light source 602 from FIG. 6
  • thermally induced tilt angle changes of the mirror elements of a mirror arrangement e.g. field facet mirror 503 from FIG. 5 or a mirror arrangement used in the projection exposure system 600 from FIG. 6
  • the tilt angle actually set via the respective mirror elements assigned to the actuators is then modified, so that said tilt angle changes caused by the thermally induced deformation are correspondingly compensated.
  • 1a-1d serve to explain the concept on which the method according to the invention is based, using schematic representations of the possible structure of a mirror arrangement 100 in the form of a facet mirror.
  • the mirror arrangement 100 has a plurality of mirror elements 110, of which each mirror element 110 has an effective optical surface 111 and is mechanically connected to a base 113 via a joint arrangement 112.
  • the base 113 of each of the mirror elements 110 is attached to a first carrier plate 105 common to all mirror elements 110 .
  • a plunger 114 is fastened is fixed to a magnet 115 at its end opposite the mirror element 110 .
  • a drive and sensor unit 130 is also assigned to each of the mirror elements 110 , the drive and sensor units 130 in turn being fastened to a common second carrier plate 125 .
  • Each drive and sensor unit 130 includes (e.g. four total) electromagnets 131 and sensors (not shown). By means of suitable control of the electromagnets 131, the respective magnet 115 and thus the mirror element 110 attached via the plunger 114 can be tilted into a desired position as a result of the magnetic force acting on the respectively assigned magnet 115, with the position being determined via the respectively assigned sensors of each drive and sensor unit 130 is controlled.
  • the electromagnets 131 of the drive and sensor units 130 are actuated via a control unit 140 Sensor units 130.
  • the incident electromagnetic radiation leads to a thermally induced deformation of both the first carrier plate 105 carrying the mirror elements 110 and the second carrier plate 125 carrying the drive and sensor units 130.
  • Fig. 1 b also shows schematically and by way of example a state achieved as a result of these deformations.
  • the individual mirror elements 110 are displaced from their original position and tilted, with the result that the sensors of the drive and sensor units 130 now detect a deviation of the respective center 116 of a magnet 115 from detect the sensor axis that is also shown (whereby, by way of example, but without the invention being restricted to this, the target position of the center 116 as on the respective sensor axis is assumed to be located).
  • the individual mirror elements 110 or their active optical surfaces no longer point in the actually desired direction. Rather, the actual alignment of the mirror elements 110 as shown in FIG. 1c corresponds to that which the control arrangement 140 incorrectly assumed to be the correct alignment (namely without adequately considering the thermal deformation that took place).
  • the said thermally induced deformations are now taken into account in such a way that the corresponding target positions (ie target tilt angle values) of the individual mirror facets are modified in a suitable manner, as will be explained in more detail below with reference to FIGS. 2-4 .
  • the drive and sensor units 130 cause a modified actuation of the individual mirror elements 110 - which deviates from the above scenario of FIG Deformations point in the desired direction again.
  • At least one temperature sensor 144 is fitted at a suitable position on the mirror arrangement 100 or on the first carrier plate 105.
  • the dynamic adjustment of the tilt angle setpoints during operation of the optical system which is described below, can then also be carried out on the basis of the signals 143 transmitted from the temperature sensor 144 to the control unit 140 .
  • a correct alignment of the mirror elements 110 or their optical active surfaces 111 is achieved, also taking into account the thermally induced deformations of the carrier plates 105, 125.
  • the actuators that are already present for tilting the mirror elements 110 of the mirror arrangement 100 (which in the specific exemplary embodiment are formed by the drive and sensor units 130 in cooperation with the magnets 115) are used, so that no additional design effort is required in this respect .
  • the appropriate control signals 142 which are used to actuate the individual mirror elements 110 via the drive and sensor units 130, as will be explained below with reference to the flow charts of FIGS.
  • the thermally induced tilt angle changes to be expected during operation of the optical system are determined.
  • the tilt angles actually set via the actuators assigned to the respective mirror elements 110 or the drive and sensor units 130 are modified so that the aforementioned tilt angle changes that are to be expected and caused by the thermally induced deformation are compensated accordingly .
  • the thermally induced changes in the tilt angle to be expected can be determined by means of a simulation (eg using the finite element method).
  • a simulation eg using the finite element method
  • the temperature distribution resulting in the region of the mirror arrangement 100 and the deformation pattern resulting from this temperature distribution can be predicted on the basis of a thermal model.
  • One such model-based simulation is carried out in step S220 according to FIG.
  • step S230 The mirror elements are then actuated in step S230 with dynamic adjustment of the desired tilt angle values, with the result that the mirror elements 110 point in the desired direction, as explained above with reference to FIG. 1d, taking into account the thermally induced deformations that have occurred.
  • the positions of the mirror elements 110 can be recalibrated at a suitable time (e.g. during a break in operation of the optical system, for example to change a wafer), so that all mirror elements 110 or their optical effective surfaces 111 can then be moved into the point in the desired direction and an error collected over the time that has elapsed or the operating time of the light source is subsequently corrected.
  • a suitable time e.g. during a break in operation of the optical system, for example to change a wafer
  • FIG. 3 shows a flowchart to explain a further embodiment of the method according to the invention.
  • This embodiment differs from that of FIG. 2 in that the determination of the thermally induced tilt angle changes to be expected (e.g. at different times after switching on the light source) for the mirror elements based on the implementation of a plurality of measurements of the relevant thermally induced tilt angle changes in a Pre-calibration done.
  • a look-up table created in this way can then be used in the actual operation of the optical system for dynamic adjustment of the desired tilt angle values in a manner analogous to the embodiment of FIG.
  • FIG. 4 shows a flowchart to explain a further embodiment of the method.
  • This embodiment differs from those from FIGS. 2 and 3 in that additionally (ie after previously determining in step S420 he followed the expected thermally induced Tilt angle changes according to specification of a light source power in step S410) a temperature measurement is carried out at at least one position in the optical system.
  • at least one temperature sensor 144 can be attached at a suitable position, for example on the mirror arrangement 100.
  • FIG. The dynamic adjustment of the desired tilt angle values during operation of the optical system which then takes place in step S440 and analogously to the embodiments described above, can then also take place on the basis of the result of this temperature measurement.
  • This configuration has the advantage that undesired dose fluctuations of the light source and/or fluctuations in the efficiency of an existing cooling system as well as any absorption effects that may take place in a residual gas atmosphere in the optical system can be at least approximately taken into account, since in addition to the advance simulation or Calibration also takes place an actual temperature measurement in the area of the mirror arrangement 100 .
  • the respective distance between magnet 115 and drive and sensor unit 130 can also be measured, with this distance in turn being able to be used as an indirect measure of the current temperature of the mirror element 110 in question.
  • suitable modifications of the tilt angle target values during operation of the mirror arrangement or the optical system can also be determined by the mirror elements being successively “switched” from the current (target) position to a measurement position in which the light striking the relevant mirror element is then directed in the direction of a detector (eg a CCD camera), with which the resulting positional deviation is determined.
  • a detector eg a CCD camera
  • one of the mirror elements or one located in a suitable position can also be used reflecting area can be used to deflect a measuring light beam, with the change in position of this measuring light beam then in turn being measured on a detector and being used as an indirect measure of the temperature or the thermally induced deformation.
  • the respective position of all mirror elements can also be actively monitored using a suitable external sensor system.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé de fonctionnement d'un système optique pour une microlithographie et un système optique, le système optique comprenant une source de lumière et un ensemble miroir (100) ayant une pluralité d'éléments miroirs (110) reliés mécaniquement à une structure de support et ces éléments miroirs pouvant être réglés par l'intermédiaire d'actionneurs associés aux éléments miroirs respectifs, par des angles d'inclinaison réglables indépendamment, afin de générer une distribution de lumière souhaitée de la lumière provenant de l'ensemble miroir, le procédé comprenant les étapes suivantes consistant à : déterminer des changements d'angle d'inclinaison attendus, induits thermiquement pour les éléments miroirs (110) pour différents états thermiques du système optique ; et modifier des angles d'inclinaison ajustés pendant le fonctionnement du système optique par l'intermédiaire des actionneurs associés aux éléments de miroir respectifs selon la détermination mentionnée ci-dessus, de telle sorte que les changements d'angle d'inclinaison attendus sont au moins partiellement compensés.
PCT/EP2021/065590 2020-07-21 2021-06-10 Procédé de fonctionnement d'un système optique pour une microlithographie et système optique Ceased WO2022017678A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102020209141.2A DE102020209141A1 (de) 2020-07-21 2020-07-21 Verfahren zum Betreiben eines optischen Systems für die Mikrolithographie, sowie optisches System
DE102020209141.2 2020-07-21

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WO2022017678A1 true WO2022017678A1 (fr) 2022-01-27

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022206832A1 (de) * 2022-07-05 2024-01-11 Carl Zeiss Smt Gmbh Verfahren zum regeln einer position einer optischen komponente einer lithographieanlage

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021201258A1 (de) 2021-02-10 2022-08-11 Carl Zeiss Smt Gmbh Verfahren zum Heizen eines optischen Elements in einer mikrolithographischen Projektionsbelichtungsanlage, sowie optisches System

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Publication number Priority date Publication date Assignee Title
WO2005026843A2 (fr) 2003-09-12 2005-03-24 Carl Zeiss Smt Ag Systeme d'eclairage pour une installation d'exposition de projection de microlithographie
DE102008009600A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie
WO2012160728A1 (fr) * 2011-05-23 2012-11-29 株式会社ニコン Procédé d'éclairage, dispositif optique d'éclairage et dispositif d'exposition
US20130100429A1 (en) 2010-07-01 2013-04-25 Carl Zeiss Smt Gmbh Optical system and multi facet mirror of a microlithographic projection exposure apparatus
DE102018219782A1 (de) * 2018-11-19 2019-01-10 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Temperatur an einem Punkt einer Komponente einer EUV-Projektionsbelichtungsanlage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005026843A2 (fr) 2003-09-12 2005-03-24 Carl Zeiss Smt Ag Systeme d'eclairage pour une installation d'exposition de projection de microlithographie
DE102008009600A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie
US20130100429A1 (en) 2010-07-01 2013-04-25 Carl Zeiss Smt Gmbh Optical system and multi facet mirror of a microlithographic projection exposure apparatus
WO2012160728A1 (fr) * 2011-05-23 2012-11-29 株式会社ニコン Procédé d'éclairage, dispositif optique d'éclairage et dispositif d'exposition
DE102018219782A1 (de) * 2018-11-19 2019-01-10 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Temperatur an einem Punkt einer Komponente einer EUV-Projektionsbelichtungsanlage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022206832A1 (de) * 2022-07-05 2024-01-11 Carl Zeiss Smt Gmbh Verfahren zum regeln einer position einer optischen komponente einer lithographieanlage

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