WO2022077772A1 - Light controlled display device - Google Patents
Light controlled display device Download PDFInfo
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- WO2022077772A1 WO2022077772A1 PCT/CN2020/140295 CN2020140295W WO2022077772A1 WO 2022077772 A1 WO2022077772 A1 WO 2022077772A1 CN 2020140295 W CN2020140295 W CN 2020140295W WO 2022077772 A1 WO2022077772 A1 WO 2022077772A1
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- light control
- light
- layer
- thin film
- display device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
Definitions
- the present invention relates to the technical field of light control display, in particular to a light control display device.
- a touch panel As an input device.
- the touch screen has been widely used in consumer electronic products such as personal digital assistants, smart mobile phones and satellite navigation.
- the touch screen (whether it is a resistive, capacitive, infrared or sonic surface type) relies on recognizing the corresponding parameter changes before and after the finger is in contact with the touch screen to determine the specific position information and realize the purpose of touch.
- the light control panel can provide the necessary hardware foundation for remote interaction.
- the light control panels developed in the industry are mainly divided into the mode that is integrated with the display array in the plane (In Cell), and the external type (On Cell) that realizes the light control function independently.
- Cell the external type
- the On Cell mode has become one of the mainstream methods because of its simple preparation process, easy realization of functions, and difficulty in causing other reliability risks.
- the reflectivity increases due to the structure of the light control device, which includes multiple layers of glass and multiple metal arrays.
- the increase in the reflectivity of external light will directly affect the display quality.
- Embodiments of the present invention provide a light-controlled display device to solve the technical problem that the existing light-controlled display device includes multi-layer glass and multi-layer metal arrays in its structure, resulting in an increase in reflectivity, which in turn affects display quality. .
- An embodiment of the present invention provides a light control display device, including a display panel and a light control layer, the light control layer is disposed on one side of the light emitting surface of the display panel, and the light control layer includes a plurality of switching films distributed in an array A transistor and a photosensitive thin film transistor, the switching thin film transistor and the photosensitive thin film transistor both include metal elements, and the metal elements of the switching thin film transistor include a first gate, a first source, a first drain and a first source layer, the metal element of the photosensitive thin film transistor includes a second gate electrode, a second source electrode, a second drain electrode and a second active layer, the second active layer can be an amorphous silicon layer, an oxide layer layer or low temperature polysilicon layer; wherein the side of the metal element of the switching thin film transistor facing away from the display panel and/or the side of the metal element of the photosensitive thin film transistor facing away from the display panel is covered with a light absorbing layer.
- the light absorption layer is disposed on the first gate, the first source, the first drain, the second gate, and the second source electrode and the second drain electrode, and cover the first gate electrode, the first source electrode, the first drain electrode, the second gate electrode, the second source electrode, and the second drain.
- the light absorption layer is a black matrix
- the black matrix is disposed corresponding to the switching thin film transistor and covers the switching thin film transistor.
- the black matrix has a porous structure or a photonic crystal structure.
- the entire surface of the light absorption layer is disposed on a side of the light control layer away from the display panel.
- the light absorption layer is a black film that absorbs visible light wavelengths.
- the light control display device further includes a first polarizer disposed on a side of the light control layer away from the display panel, and a first polarizer disposed on a side away from the light emitting surface of the display panel the second polarizer.
- the light absorption layer is disposed on a side of the first polarizer away from the light control layer.
- the light control layer further includes scan lines and data lines
- the light absorption layer is further disposed on the scan lines and the data lines and covers the scan lines and all the data lines. the data line.
- An embodiment of the present invention further provides a light control display device, including a display panel and a light control layer, the light control layer is disposed on one side of the light emitting surface of the display panel, and the light control layer includes a plurality of switches distributed in an array Thin film transistors and photosensitive thin film transistors, both of the switching thin film transistors and the photosensitive thin film transistors include metal elements; wherein the metal elements of the switching thin film transistors are on the side away from the display panel and/or the photosensitive thin film The side of the metal element of the transistor facing away from the display panel is covered with a light absorbing layer.
- the metal element of the switching thin film transistor includes a first gate electrode, a first source electrode and a first drain electrode
- the metal element of the photosensitive thin film transistor includes a second gate electrode, a first source electrode and a first drain electrode. Two source electrodes and a second drain electrode.
- the light absorption layer is disposed on the first gate, the first source, the first drain, the second gate, and the second source electrode and the second drain electrode, and cover the first gate electrode, the first source electrode, the first drain electrode, the second gate electrode, the second source electrode, and the second drain.
- the light absorption layer is a black matrix
- the black matrix is disposed corresponding to the switching thin film transistor and covers the switching thin film transistor.
- the black matrix has a porous structure or a photonic crystal structure.
- the entire surface of the light absorption layer is disposed on a side of the light control layer away from the display panel.
- the light absorption layer is a black film that absorbs visible light wavelengths.
- the light control display device further includes a first polarizer disposed on a side of the light control layer away from the display panel, and a first polarizer disposed on a side away from the light emitting surface of the display panel the second polarizer.
- the light absorption layer is disposed on a side of the first polarizer away from the light control layer.
- the light control layer further includes scan lines and data lines
- the light absorption layer is further disposed on the scan lines and the data lines and covers the scan lines and all the data lines. the data line.
- the switching thin film transistor further includes a first active layer, and the first active layer may be one of an amorphous silicon layer, a low temperature polysilicon layer and an oxide layer.
- an external light control layer with low reflectivity is constructed by arranging different types of light absorbing layers, which is further used for constructing a display device with light control function.
- One is to use black metal as a light absorbing film layer and set it on the electrode to construct a light control layer with low reflectivity; the other is to use two-photon laser direct writing technology to structure the black matrix used to block ambient light.
- the design can be constructed as a porous structure or a photonic crystal structure to enhance the absorption of ambient light and reduce the reflectivity; one is a low-reflection film lamination design, which is attached to the surface of the cover plate to reduce the reflectivity.
- the above types of light absorption layers can independently reduce the reflectivity of the external light control panel, thereby improving the display quality of the whole machine and improving the competitiveness of the product.
- FIG. 1 is a schematic structural diagram of a light control display device according to an embodiment of the present invention.
- FIG. 2 is a schematic structural diagram of a light control layer provided by an embodiment of the present invention.
- FIG. 3 is a schematic structural diagram of a light control layer provided by other embodiments of the present invention.
- FIG. 4 is a schematic structural diagram of a light control display device according to another embodiment of the present invention.
- an embodiment of the present invention provides a light control display device 100 , which includes a display panel 10 and a light control layer 20 .
- the light control layer 20 is an On cell structure, which can be directly disposed on the surface of the display panel 10 , eliminating the need for a single substrate carrying the light control layer 20 , which can not only reduce the thickness of the whole machine, but also
- the light control technology of the On cell structure is relative to the In integrated in the array substrate
- the light control technology of the cell structure has a simpler preparation process, and the function is easy to realize, and it is not easy to cause other reliability risks.
- the light control layer 20 in this embodiment is disposed on the light-emitting surface side of the display panel 10 .
- the display panel 10 is a liquid crystal display panel, and in other embodiments, the display panel 10 may be an OLED display panel.
- the display panel 10 may include an array substrate, a color filter substrate, and a liquid crystal layer interposed therebetween.
- the structure of the display panel 10 may refer to the prior art, which will not be repeated here.
- the light control layer 20 may be disposed on the color filter substrate of the display panel 10 , and the light control layer 20 and the color filter substrate share the same substrate.
- the light control layer 20 includes a plurality of switching thin film transistors 21 and photosensitive thin film transistors 22 distributed in an array, wherein the switching thin film transistors 21 and the photosensitive thin film transistors 22 both include metal elements, such as gates pole, source, and drain.
- the embodiments of the present invention make improvements for the defect of the high reflectivity of the plug-in light control display device 100 .
- the metal elements of the switching thin film transistor 21 can be shielded from light, and the metal elements of the light-sensitive thin film transistor 22 can also be shielded from light, so as to construct an external light control display device 100 with low reflectivity. .
- the side of the metal element of the switching thin film transistor 21 facing away from the display panel 10 and/or the side of the metal element of the photosensitive thin film transistor 22 facing away from the display panel 10 is covered with a light absorbing layer 25 .
- the light absorbing layer 25 may cover the entire side of the switching thin film transistor 21 away from the display panel 10, or may only cover the metal elements of the switching thin film transistor 21, so as to avoid The purpose of ambient light irradiating on the metal element of the switching thin film transistor 21 is sufficient.
- the light absorbing layer 25 may only cover the metal element of the photosensitive thin film transistor 22 , or may cover the entire surface of the photosensitive thin film transistor 22 away from the display panel 10 . side, to prevent ambient light from irradiating the metal elements of the photosensitive thin film transistor 22 . Since the device photosensitivity of the photosensitive thin film transistor 22 comes from the electrical curve change caused by the active layer of the photosensitive thin film transistor 22 being stimulated by external laser light, when the light absorbing layer 25 is disposed on the entire surface, it is necessary to ensure that the light absorbing layer is 25 does not affect the light reception of the second active layer 222 of the photosensitive thin film transistor 22 .
- the metal elements of the switching thin film transistor 21 include a first gate electrode 211 , a first source electrode 213 , and a first drain electrode 214 .
- the light absorbing layer 25 is disposed on the first gate electrode 211 , the first source electrode 213 , and the first drain electrode 214 and covers the first gate electrode 211 , the first drain electrode 214 and the first drain electrode 214 .
- the source electrode 213 and the first drain electrode 214 are used for absorbing external ambient light to avoid strong reflection.
- the metal elements of the photosensitive thin film transistor 22 include a second gate electrode 221 , a second source electrode 223 , and a second drain electrode 224 .
- the light absorption layer 25 is further disposed on the second gate electrode 221 , the second source electrode 223 and the second drain electrode 224 and covers the second gate electrode 221 and the second source electrode
- the electrode 223 and the second drain electrode 224 are used to further absorb ambient light. In this embodiment, only the reflected ambient light caused by the metal wire is shielded, which will not affect the photosensitivity of the photosensitive thin film transistor 22 , so the design will not affect the performance of the light control layer 20 .
- the light control layer 20 also includes metal lines such as scan lines and data lines for loading signals. Therefore, according to actual needs, in some embodiments, the light absorption layer 25 can also be disposed on the scan lines and data lines. on the scanning line and the data line.
- the light absorbing layer 25 may be a black metal layer, which has better light absorption effect. Therefore, disposing the black metal on the electrodes can reduce ambient light reflection and improve the display effect.
- the light absorption layer 25 may be MoOx, Cr or other metals with good absorption effect, and the light absorption layer 25 may also be a composite metal film layer.
- the black metal layer can be prepared by physical vapor deposition, chemical vapor deposition, or inkjet printing, and then the light absorbing layer 25 can be obtained through patterning design.
- the light absorbing layer 25 may also be a polymer film layer doped with ferrous metal particles.
- the switching thin film transistor 21 further includes a first active layer 212, and the first active layer 212 may be one of an amorphous silicon layer, a low temperature polysilicon layer and an oxide layer.
- the photosensitive thin film transistor 22 further includes a second active layer 222.
- the second active layer 222 is an amorphous silicon layer. When the amorphous silicon is stimulated by an external laser, its electrical curve may change. , so that the photosensitive thin film transistor 22 responds.
- the second active layer 222 can also be an oxide layer or a low temperature polysilicon layer, and an organic photosensitive layer can be added on the oxide layer or the low temperature polysilicon layer to widen the second active layer Absorption of light by layer 222.
- the switching thin film transistor 21 and the photosensitive thin film transistor 22 are both bottom gate structures. In other embodiments, the switching thin film transistor 21 and the photosensitive thin film transistor 22 may also be top
- the gate structure is not limited here.
- the switching thin film transistor 21 is electrically connected to the photosensitive thin film transistor 22 . Specifically, one of the first source electrode 213 and the first drain electrode 214 of the switching thin film transistor 21 is electrically connected to one of the second source electrode 223 and the second drain electrode 224 of the photosensitive thin film transistor 22 .
- the metal element of the switching thin film transistor 21 can be disposed in the same layer as the metal element of the photosensitive thin film transistor 22 , for example, the first source electrode 213 , the first drain electrode 214 and the first source electrode 213
- the two source electrodes 223 and the second drain electrode 224 are disposed in the same layer, and the first gate electrode 211 and the second gate electrode 221 can be disposed in the same layer.
- the gate, source, and drain can be copper, aluminum or other metal electrodes.
- the light control layer 20 further includes a substrate 23 , the substrate 23 may be a glass substrate, and the substrate 23 is also used as a substrate of the color filter substrate of the display panel 10 .
- the light control layer 20 further includes a gate insulating layer 24 covering the first gate electrode 211 and the second gate electrode 221 , and a gate insulating layer 24 covering the first source electrode 213 , the first drain electrode 214 , the The passivation layer 26 of the second source electrode 223 and the second drain electrode 224 is formed.
- the metal elements in the thin film transistors on the array substrate of the display panel 100 may also adopt the design of the light absorbing layer 25 described above.
- the light absorbing layer 25 may be a black matrix, and the black matrix is disposed corresponding to the switching thin film transistor 21 and covers the switching thin film transistor 21 .
- the black matrix can only be set corresponding to the switching thin film transistor 21 .
- the black matrix has a porous structure or a photonic crystal structure, and the porous structure and the photonic crystal structure can greatly increase the absorption of ambient light by the black matrix and reduce the reflection of ambient light.
- the photolithography method can be used to design the complex structure of the photoresist of the black matrix, and the two-photon direct writing technology can also be used to design the microstructure to construct the photonic crystal structure.
- the light control display device 100 further includes a cover plate 50 , and the cover plate 50 is disposed on the outer side of the light control layer 20 , that is, on the side away from the display panel 10 .
- the light absorbing layer 25 may be disposed on the entire surface of the light control layer 20 on the side away from the display panel 10 .
- the light absorbing layer 25 can be a low-reflection film, which is provided by lamination. Specifically, the light absorbing layer 25 may be a black film that absorbs visible light wavelengths to reduce ambient light reflection.
- the light control display device 100 further includes a first polarizer 30 disposed on a side of the light control layer 20 away from the display panel and a second polarizer 40 disposed on a side away from the light-emitting surface of the display panel 10 . , that is, the display panel 10 and the light control layer 20 are sandwiched between the first polarizer 30 and the second polarizer 40 .
- the light absorbing layer 25 can be disposed on the side of the first polarizer 30 away from the light control layer 20 to absorb external light.
- the light absorbing layer 25 can be connected to the first polarizer 30 through optical glue. fit.
- the light absorbing layer 25 may also be disposed on the outer side of the cover plate 50 , and may be externally attached to the surface of the cover plate 50 through optical glue.
- an external light control layer with low reflectivity is constructed by arranging different types of light absorption layers 25 , which is then used to construct a display device with a light control function.
- One is to use black metal as a light absorbing film layer and set it on the electrode to construct a light control layer with low reflectivity; the other is to use two-photon laser direct writing technology to structure the black matrix used to block ambient light.
- the black matrix can be constructed as a porous structure or a photonic crystal structure, thereby enhancing the absorption of ambient light and reducing the reflectivity; the other is a low-reflection film lamination design, which is attached to the surface of the cover plate to reduce the reflectivity.
- the above types of light absorption layers can independently reduce the reflectivity of the external light control panel, thereby improving the display quality of the whole machine and improving the competitiveness of the product.
- a light-controlled display device provided by the embodiments of the present invention has been described in detail above, and the principles and implementations of the present invention are described with specific examples in this paper.
- the descriptions of the above embodiments are only used to help understand the present invention
- Technical solutions and their core ideas those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements to some of the technical features; and these modifications or replacements do not
- the essence of the corresponding technical solutions is deviated from the scope of the technical solutions of the embodiments of the present invention.
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Abstract
Description
本发明涉及光控显示技术领域，尤其涉及一种光控显示装置。The present invention relates to the technical field of light control display, in particular to a light control display device.
近年来，随着信息技术、无线通讯和信息家电的快速发展与应用，为了达到更便利、体积更轻巧化以及更人性化的目的，许多信息产品已由传统的键盘或鼠标等输入装置，转变为使用触控面板作为输入装置。其中，触控显示屏作为最流行的触控面板，已广泛的使用在个人数字助理器、智能型行动电话以及卫星导航等消费性电子产品上。目前触控显示屏(无论是电阻式、电容式、红外线式或者声波表面式)是依靠识别手指与触摸显示屏接触前后对应的参数变化来判断具体的位置信息，实现触控的目的。但是其无法实现远程操作，无法实现隔空触控，而光控面板可为远程交互提供必备的硬件基础。In recent years, with the rapid development and application of information technology, wireless communication and information appliances, many information products have been transformed from traditional input devices such as keyboards or mice in order to achieve more convenience, lighter size and more humanization. To use a touch panel as an input device. Among them, as the most popular touch panel, the touch screen has been widely used in consumer electronic products such as personal digital assistants, smart mobile phones and satellite navigation. At present, the touch screen (whether it is a resistive, capacitive, infrared or sonic surface type) relies on recognizing the corresponding parameter changes before and after the finger is in contact with the touch screen to determine the specific position information and realize the purpose of touch. However, it cannot realize remote operation and remote touch, and the light control panel can provide the necessary hardware foundation for remote interaction.
目前业内所开发的光控面板，主要分为与显示阵列集成于面内（In Cell）的模式，以及单独实现光控功能的外挂式（On Cell）模式。其中，On Cell模式因其制备工艺简单，功能易于实现，同时不易引发其他信赖性风险，而成为目前主流方式之一。At present, the light control panels developed in the industry are mainly divided into the mode that is integrated with the display array in the plane (In Cell), and the external type (On Cell) that realizes the light control function independently. Cell) mode. Among them, the On Cell mode has become one of the mainstream methods because of its simple preparation process, easy realization of functions, and difficulty in causing other reliability risks.
虽然On Cell模式的功能易于实现，但由于光控装置的结构内含多层玻璃和多层金属阵列，反射率也会随之增高。而对外界光线的反射率增高，将直接影响显示的品质。While the functionality of the On Cell mode is easy to implement, the reflectivity increases due to the structure of the light control device, which includes multiple layers of glass and multiple metal arrays. The increase in the reflectivity of external light will directly affect the display quality.
因此现有的外挂式光控面板的结构有待于改进。Therefore, the structure of the existing plug-in light control panel needs to be improved.
本发明实施例提供一种光控显示装置，以解决现有的光控显示装置，由于其结构内包括多层玻璃及多层金属阵列，导致反射率随之增高，进而影响显示品质的技术问题。Embodiments of the present invention provide a light-controlled display device to solve the technical problem that the existing light-controlled display device includes multi-layer glass and multi-layer metal arrays in its structure, resulting in an increase in reflectivity, which in turn affects display quality. .
为解决上述问题，本发明提供的技术方案如下：For solving the above problems, the technical solutions provided by the present invention are as follows:
本发明实施例提供一种光控显示装置，包括显示面板和光控层，所述光控层设置于所述显示面板出光面的一侧，所述光控层包括多个阵列分布的开关薄膜晶体管和光感薄膜晶体管，所述开关薄膜晶体管和所述光感薄膜晶体管均包括金属元件，所述开关薄膜晶体管的金属元件包括第一栅极、第一源极、第一漏极以及第一有源层，所述光感薄膜晶体管的金属元件包括第二栅极、第二源极、第二漏极以及第二有源层，所述第二有源层可为非晶硅层、氧化物层或者低温多晶硅层；其中，所述开关薄膜晶体管的金属元件背离所述显示面板的一侧和/或所述光感薄膜晶体管的金属元件背离所述显示面板的一侧覆盖有光吸收层。An embodiment of the present invention provides a light control display device, including a display panel and a light control layer, the light control layer is disposed on one side of the light emitting surface of the display panel, and the light control layer includes a plurality of switching films distributed in an array A transistor and a photosensitive thin film transistor, the switching thin film transistor and the photosensitive thin film transistor both include metal elements, and the metal elements of the switching thin film transistor include a first gate, a first source, a first drain and a first source layer, the metal element of the photosensitive thin film transistor includes a second gate electrode, a second source electrode, a second drain electrode and a second active layer, the second active layer can be an amorphous silicon layer, an oxide layer layer or low temperature polysilicon layer; wherein the side of the metal element of the switching thin film transistor facing away from the display panel and/or the side of the metal element of the photosensitive thin film transistor facing away from the display panel is covered with a light absorbing layer.
在本发明的一种实施例中，所述光吸收层设置于所述第一栅极、所述第一源极、所述第一漏极、所述第二栅极、所述第二源极、以及所述第二漏极上，且覆盖所述第一栅极、所述第一源极、所述第一漏极、所述第二栅极、所述第二源极、以及所述第二漏极。In an embodiment of the present invention, the light absorption layer is disposed on the first gate, the first source, the first drain, the second gate, and the second source electrode and the second drain electrode, and cover the first gate electrode, the first source electrode, the first drain electrode, the second gate electrode, the second source electrode, and the the second drain.
在本发明的一种实施例中，所述光吸收层为黑矩阵，所述黑矩阵对应于所述开关薄膜晶体管设置且覆盖所述开关薄膜晶体管。In an embodiment of the present invention, the light absorption layer is a black matrix, and the black matrix is disposed corresponding to the switching thin film transistor and covers the switching thin film transistor.
在本发明的一种实施例中，所述黑矩阵具有多孔结构或光子晶体结构。In an embodiment of the present invention, the black matrix has a porous structure or a photonic crystal structure.
在本发明的一种实施例中，所述光吸收层整面设置于所述光控层背离所述显示面板的一侧。In an embodiment of the present invention, the entire surface of the light absorption layer is disposed on a side of the light control layer away from the display panel.
在本发明的一种实施例中，所述光吸收层为吸收可见光波段的黑膜。In an embodiment of the present invention, the light absorption layer is a black film that absorbs visible light wavelengths.
在本发明的一种实施例中，所述光控显示装置还包括设置于所述光控层背离所述显示面板的一侧的第一偏光片和设置于背离所述显示面板出光面一侧的第二偏光片。In an embodiment of the present invention, the light control display device further includes a first polarizer disposed on a side of the light control layer away from the display panel, and a first polarizer disposed on a side away from the light emitting surface of the display panel the second polarizer.
在本发明的一种实施例中，所述光吸收层设置于所述第一偏光片背离所述光控层的一侧。In an embodiment of the present invention, the light absorption layer is disposed on a side of the first polarizer away from the light control layer.
在本发明的一种实施例中，所述光控层还包括扫描线和数据线，所述光吸收层还设置于所述扫描线和所述数据线上，且覆盖所述扫描线和所述数据线。In an embodiment of the present invention, the light control layer further includes scan lines and data lines, and the light absorption layer is further disposed on the scan lines and the data lines and covers the scan lines and all the data lines. the data line.
本发明实施例还提供一种光控显示装置，包括显示面板和光控层，所述光控层设置于所述显示面板出光面的一侧，所述光控层包括多个阵列分布的开关薄膜晶体管和光感薄膜晶体管，所述开关薄膜晶体管和所述光感薄膜晶体管均包括金属元件；其中，所述开关薄膜晶体管的金属元件背离所述显示面板的一侧和/或所述光感薄膜晶体管的金属元件背离所述显示面板的一侧覆盖有光吸收层。An embodiment of the present invention further provides a light control display device, including a display panel and a light control layer, the light control layer is disposed on one side of the light emitting surface of the display panel, and the light control layer includes a plurality of switches distributed in an array Thin film transistors and photosensitive thin film transistors, both of the switching thin film transistors and the photosensitive thin film transistors include metal elements; wherein the metal elements of the switching thin film transistors are on the side away from the display panel and/or the photosensitive thin film The side of the metal element of the transistor facing away from the display panel is covered with a light absorbing layer.
在本发明的一种实施例中，所述开关薄膜晶体管的金属元件包括第一栅极、第一源极以及第一漏极，所述光感薄膜晶体管的金属元件包括第二栅极、第二源极以及第二漏极。In an embodiment of the present invention, the metal element of the switching thin film transistor includes a first gate electrode, a first source electrode and a first drain electrode, and the metal element of the photosensitive thin film transistor includes a second gate electrode, a first source electrode and a first drain electrode. Two source electrodes and a second drain electrode.
在本发明的一种实施例中，所述光吸收层设置于所述第一栅极、所述第一源极、所述第一漏极、所述第二栅极、所述第二源极、以及所述第二漏极上，且覆盖所述第一栅极、所述第一源极、所述第一漏极、所述第二栅极、所述第二源极、以及所述第二漏极。In an embodiment of the present invention, the light absorption layer is disposed on the first gate, the first source, the first drain, the second gate, and the second source electrode and the second drain electrode, and cover the first gate electrode, the first source electrode, the first drain electrode, the second gate electrode, the second source electrode, and the the second drain.
在本发明的一种实施例中，所述光吸收层为黑矩阵，所述黑矩阵对应于所述开关薄膜晶体管设置且覆盖所述开关薄膜晶体管。In an embodiment of the present invention, the light absorption layer is a black matrix, and the black matrix is disposed corresponding to the switching thin film transistor and covers the switching thin film transistor.
在本发明的一种实施例中，所述黑矩阵具有多孔结构或光子晶体结构。In an embodiment of the present invention, the black matrix has a porous structure or a photonic crystal structure.
在本发明的一种实施例中，所述光吸收层整面设置于所述光控层背离所述显示面板的一侧。In an embodiment of the present invention, the entire surface of the light absorption layer is disposed on a side of the light control layer away from the display panel.
在本发明的一种实施例中，所述光吸收层为吸收可见光波段的黑膜。In an embodiment of the present invention, the light absorption layer is a black film that absorbs visible light wavelengths.
在本发明的一种实施例中，所述光控显示装置还包括设置于所述光控层背离所述显示面板的一侧的第一偏光片和设置于背离所述显示面板出光面一侧的第二偏光片。In an embodiment of the present invention, the light control display device further includes a first polarizer disposed on a side of the light control layer away from the display panel, and a first polarizer disposed on a side away from the light emitting surface of the display panel the second polarizer.
在本发明的一种实施例中，所述光吸收层设置于所述第一偏光片背离所述光控层的一侧。In an embodiment of the present invention, the light absorption layer is disposed on a side of the first polarizer away from the light control layer.
在本发明的一种实施例中，所述光控层还包括扫描线和数据线，所述光吸收层还设置于所述扫描线和所述数据线上，且覆盖所述扫描线和所述数据线。In an embodiment of the present invention, the light control layer further includes scan lines and data lines, and the light absorption layer is further disposed on the scan lines and the data lines and covers the scan lines and all the data lines. the data line.
在本发明的一种实施例中，所述开关薄膜晶体管还包括第一有源层，所述第一有源层可为非晶硅层、低温多晶硅层以及氧化物层中的一种。In an embodiment of the present invention, the switching thin film transistor further includes a first active layer, and the first active layer may be one of an amorphous silicon layer, a low temperature polysilicon layer and an oxide layer.
本发明实施例通过设置不同类型的光吸收层来构建具有低反射率的外挂式光控层，进而用于构建具有光控功能的显示装置。一种为采取黑金属作为光吸收膜层，设置于电极上，来构建具有低反射率的光控层；一种为采用双光子激光直写技术，对用于遮挡环境光的黑矩阵进行结构设计，可构建为多孔结构或者光子晶体结构，从而增强对于环境光的吸收，降低反射率；一种为采用低反膜贴合设计，外贴于盖板表面，降低反射率。以上类型的光吸收层均可独立实现降低外挂式光控面板的反射率，从而提升整机的显示品质，提高产品竞争力。In the embodiment of the present invention, an external light control layer with low reflectivity is constructed by arranging different types of light absorbing layers, which is further used for constructing a display device with light control function. One is to use black metal as a light absorbing film layer and set it on the electrode to construct a light control layer with low reflectivity; the other is to use two-photon laser direct writing technology to structure the black matrix used to block ambient light. The design can be constructed as a porous structure or a photonic crystal structure to enhance the absorption of ambient light and reduce the reflectivity; one is a low-reflection film lamination design, which is attached to the surface of the cover plate to reduce the reflectivity. The above types of light absorption layers can independently reduce the reflectivity of the external light control panel, thereby improving the display quality of the whole machine and improving the competitiveness of the product.
图1为本发明实施例提供的光控显示装置的结构示意图。FIG. 1 is a schematic structural diagram of a light control display device according to an embodiment of the present invention.
图2为本发明实施例提供的光控层的结构示意图。FIG. 2 is a schematic structural diagram of a light control layer provided by an embodiment of the present invention.
图3为本发明其他实施例提供的光控层的结构示意图。FIG. 3 is a schematic structural diagram of a light control layer provided by other embodiments of the present invention.
图4为本发明其他实施例提供的光控显示装置的结构示意图。FIG. 4 is a schematic structural diagram of a light control display device according to another embodiment of the present invention.
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc., or The positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it should not be construed as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features.
请参阅图1，本发明实施例提供一种光控显示装置100，包括显示面板10和光控层20。本发明实施例中的所述光控层20为On cell结构，可直接设置于所述显示面板10表面，省去一道单独承载光控层20的衬底的制程，不仅可降低整机厚度，On cell结构的光控技术相对于集成于阵列基板中的In cell结构的光控技术，其制备工艺更为简单，且功能易于实现，不易引发其他信赖性风险。Referring to FIG. 1 , an embodiment of the present invention provides a light control display device 100 , which includes a display panel 10 and a light control layer 20 . In the embodiment of the present invention, the light control layer 20 is an On cell structure, which can be directly disposed on the surface of the display panel 10 , eliminating the need for a single substrate carrying the light control layer 20 , which can not only reduce the thickness of the whole machine, but also The light control technology of the On cell structure is relative to the In integrated in the array substrate The light control technology of the cell structure has a simpler preparation process, and the function is easy to realize, and it is not easy to cause other reliability risks.
具体地，本实施例中的所述光控层20设置于所述显示面板10的出光面一侧。本实施例中所述显示面板10为液晶显示面板，在其他实施例中，所述显示面板10可为OLED显示面板。Specifically, the light control layer 20 in this embodiment is disposed on the light-emitting surface side of the display panel 10 . In this embodiment, the display panel 10 is a liquid crystal display panel, and in other embodiments, the display panel 10 may be an OLED display panel.
所述显示面板10可包括阵列基板、彩膜基板以及夹设于两者之间的液晶层，所述显示面板10的结构可参考现有技术，这里不再赘述。The display panel 10 may include an array substrate, a color filter substrate, and a liquid crystal layer interposed therebetween. The structure of the display panel 10 may refer to the prior art, which will not be repeated here.
进一步地，所述光控层20可设置于所述显示面板10的彩膜基板上，所述光控层20与所述彩膜基板共用同一衬底。Further, the light control layer 20 may be disposed on the color filter substrate of the display panel 10 , and the light control layer 20 and the color filter substrate share the same substrate.
请参阅图2，所述光控层20包括多个阵列分布的开关薄膜晶体管21和光感薄膜晶体管22，其中，所述开关薄膜晶体管21和所述光感薄膜晶体管22均包括金属元件，例如栅极、源极、以及漏极等。Referring to FIG. 2 , the light control layer 20 includes a plurality of switching thin film transistors 21 and photosensitive thin film transistors 22 distributed in an array, wherein the switching thin film transistors 21 and the photosensitive thin film transistors 22 both include metal elements, such as gates pole, source, and drain.
由于光控层20以及下层的显示面板10涉及到多层玻璃和多层金属阵列，导致整个光控显示装置100的反射率会随之增高，而对外界光线的反射率增高，将会直接影响显示的品质，尤其在强光环境下，显示品质会大大降低。因此，本发明实施例针对外挂式的光控显示装置100的反射率较高的缺陷作出改进。Since the light control layer 20 and the underlying display panel 10 involve multi-layer glass and multi-layer metal arrays, the reflectivity of the entire light control display device 100 will increase accordingly, and the increase in the reflectivity of external light will directly affect the Display quality, especially in strong light environment, the display quality will be greatly reduced. Therefore, the embodiments of the present invention make improvements for the defect of the high reflectivity of the plug-in light control display device 100 .
本发明实施例可对所述开关薄膜晶体管21的金属元件进行遮光处理，还可对所述光感薄膜晶体管22的金属元件进行遮光处理，以构建具有低反射率的外挂式光控显示装置100。In the embodiment of the present invention, the metal elements of the switching thin film transistor 21 can be shielded from light, and the metal elements of the light-sensitive thin film transistor 22 can also be shielded from light, so as to construct an external light control display device 100 with low reflectivity. .
具体地，所述开关薄膜晶体管21的金属元件背离所述显示面板10的一侧和/或所述光感薄膜晶体管22的金属元件背离所述显示面板10的一侧覆盖有光吸收层25。Specifically, the side of the metal element of the switching thin film transistor 21 facing away from the display panel 10 and/or the side of the metal element of the photosensitive thin film transistor 22 facing away from the display panel 10 is covered with a light absorbing layer 25 .
一种实施例中，所述光吸收层25可整体覆盖于所述开关薄膜晶体管21背离所述显示面板10的一侧，还可仅覆盖于所述开关薄膜晶体管21的金属元件上，达到避免环境光照射到所述开关薄膜晶体管21的金属元件上的目的即可。In one embodiment, the light absorbing layer 25 may cover the entire side of the switching thin film transistor 21 away from the display panel 10, or may only cover the metal elements of the switching thin film transistor 21, so as to avoid The purpose of ambient light irradiating on the metal element of the switching thin film transistor 21 is sufficient.
一种实施例中，所述光吸收层25还可仅覆盖在所述光感薄膜晶体管22的金属元件上，也可整面覆盖于所述光感薄膜晶体管22背离所述显示面板10的一侧，达到避免环境光照射到所述光感薄膜晶体管22的金属元件的目的。由于所述光感薄膜晶体管22的器件光敏性来源于其有源层受到外界激光刺激而导致的电性曲线变化，因此当所述光吸收层25整面设置时，需保证所述光吸收层25不影响所述光感薄膜晶体管22的第二有源层222的光线接收。In one embodiment, the light absorbing layer 25 may only cover the metal element of the photosensitive thin film transistor 22 , or may cover the entire surface of the photosensitive thin film transistor 22 away from the display panel 10 . side, to prevent ambient light from irradiating the metal elements of the photosensitive thin film transistor 22 . Since the device photosensitivity of the photosensitive thin film transistor 22 comes from the electrical curve change caused by the active layer of the photosensitive thin film transistor 22 being stimulated by external laser light, when the light absorbing layer 25 is disposed on the entire surface, it is necessary to ensure that the light absorbing layer is 25 does not affect the light reception of the second active layer 222 of the photosensitive thin film transistor 22 .
请参阅图2，所述开关薄膜晶体管21的金属元件包括第一栅极211、第一源极213、以及第一漏极214。Referring to FIG. 2 , the metal elements of the switching thin film transistor 21 include a first gate electrode 211 , a first source electrode 213 , and a first drain electrode 214 .
一种实施例中，所述光吸收层25设置于所述第一栅极211、第一源极213、以及所述第一漏极214上，且覆盖所述第一栅极211、第一源极213、以及所述第一漏极214，用以吸收外界环境光，避免产生强烈的反光现象。In one embodiment, the light absorbing layer 25 is disposed on the first gate electrode 211 , the first source electrode 213 , and the first drain electrode 214 and covers the first gate electrode 211 , the first drain electrode 214 and the first drain electrode 214 . The source electrode 213 and the first drain electrode 214 are used for absorbing external ambient light to avoid strong reflection.
所述光感薄膜晶体管22的金属元件包括第二栅极221、第二源极223、以及第二漏极224。The metal elements of the photosensitive thin film transistor 22 include a second gate electrode 221 , a second source electrode 223 , and a second drain electrode 224 .
一种实施例中，所述光吸收层25还设置于所述第二栅极221、第二源极223、以及第二漏极224上，且覆盖所述第二栅极221、第二源极223、以及第二漏极224，以进一步吸收外界环境光。本实施例中，仅屏蔽由金属线引起的反射的环境光，对于所述光感薄膜晶体管22的器件光敏性不会产生影响，因此该设计不会影响所述光控层20的性能。In one embodiment, the light absorption layer 25 is further disposed on the second gate electrode 221 , the second source electrode 223 and the second drain electrode 224 and covers the second gate electrode 221 and the second source electrode The electrode 223 and the second drain electrode 224 are used to further absorb ambient light. In this embodiment, only the reflected ambient light caused by the metal wire is shielded, which will not affect the photosensitivity of the photosensitive thin film transistor 22 , so the design will not affect the performance of the light control layer 20 .
所述光控层20还包括扫描线和数据线等用于加载信号的金属线，因此根据实际需要，在一些实施例中，所述光吸收层25还可设置于所述扫描线和数据线上，且覆盖所述扫描线和所述数据线。The light control layer 20 also includes metal lines such as scan lines and data lines for loading signals. Therefore, according to actual needs, in some embodiments, the light absorption layer 25 can also be disposed on the scan lines and data lines. on the scanning line and the data line.
一种实施例中，所述光吸收层25可为黑色金属层，黑色金属对光吸收效果较好，因此将黑色金属设置于电极之上，可降低环境光反射，提升显示效果。In one embodiment, the light absorbing layer 25 may be a black metal layer, which has better light absorption effect. Therefore, disposing the black metal on the electrodes can reduce ambient light reflection and improve the display effect.
具体地，所述光吸收层25可为MoOx、Cr或其他吸收效果好的金属，所述光吸收层25还可为复合金属膜层。可采用物理气相沉积、化学气相沉积、或喷墨打印等方法制备黑色金属层，再经图案化设计得到所述光吸收层25。Specifically, the light absorption layer 25 may be MoOx, Cr or other metals with good absorption effect, and the light absorption layer 25 may also be a composite metal film layer. The black metal layer can be prepared by physical vapor deposition, chemical vapor deposition, or inkjet printing, and then the light absorbing layer 25 can be obtained through patterning design.
一种实施例中，所述光吸收层25还可为掺杂有黑色金属颗粒的聚合物膜层。In one embodiment, the light absorbing layer 25 may also be a polymer film layer doped with ferrous metal particles.
所述开关薄膜晶体管21还包括第一有源层212，所述第一有源层212可为非晶硅层、低温多晶硅层以及氧化物层中的一种。The switching thin film transistor 21 further includes a first active layer 212, and the first active layer 212 may be one of an amorphous silicon layer, a low temperature polysilicon layer and an oxide layer.
所述光感薄膜晶体管22还包括第二有源层222，本实施例中的所述第二有源层222为非晶硅层，非晶硅受外界激光刺激可导致其电性曲线发生变化，从而使得所述光感薄膜晶体管22响应。在其他实施例中，所述第二有源层222还可为氧化物层或低温多晶硅层，可在氧化物层或低温多晶硅层上增加一层有机感光层，以拓宽所述第二有源层222对光的吸收。The photosensitive thin film transistor 22 further includes a second active layer 222. In this embodiment, the second active layer 222 is an amorphous silicon layer. When the amorphous silicon is stimulated by an external laser, its electrical curve may change. , so that the photosensitive thin film transistor 22 responds. In other embodiments, the second active layer 222 can also be an oxide layer or a low temperature polysilicon layer, and an organic photosensitive layer can be added on the oxide layer or the low temperature polysilicon layer to widen the second active layer Absorption of light by layer 222.
本发明实施例中，所述开关薄膜晶体管21和所述光感薄膜晶体管22均为底栅结构，在其他实施例中，所述开关薄膜晶体管21和所述光感薄膜晶体管22还可为顶栅结构，这里不做限制。In the embodiment of the present invention, the switching thin film transistor 21 and the photosensitive thin film transistor 22 are both bottom gate structures. In other embodiments, the switching thin film transistor 21 and the photosensitive thin film transistor 22 may also be top The gate structure is not limited here.
所述开关薄膜晶体管21与所述光感薄膜晶体管22电连接。具体地所述开关薄膜晶体管21的第一源极213、第一漏极214之一与所述光感薄膜晶体管22的第二源极223、第二漏极224之一电连接。The switching thin film transistor 21 is electrically connected to the photosensitive thin film transistor 22 . Specifically, one of the first source electrode 213 and the first drain electrode 214 of the switching thin film transistor 21 is electrically connected to one of the second source electrode 223 and the second drain electrode 224 of the photosensitive thin film transistor 22 .
请参阅图2，所述开关薄膜晶体管21的金属元件可与所述光感薄膜晶体管22的金属元件同层设置，例如所述第一源极213、所述第一漏极214与所述第二源极223、所述第二漏极224同层设置，所述第一栅极211可与所述第二栅极221同层设置。Please refer to FIG. 2 , the metal element of the switching thin film transistor 21 can be disposed in the same layer as the metal element of the photosensitive thin film transistor 22 , for example, the first source electrode 213 , the first drain electrode 214 and the first source electrode 213 The two source electrodes 223 and the second drain electrode 224 are disposed in the same layer, and the first gate electrode 211 and the second gate electrode 221 can be disposed in the same layer.
上述栅极、源极、以及漏极可为铜、铝或其他金属电极。The gate, source, and drain can be copper, aluminum or other metal electrodes.
所述光控层20还包括衬底23，所述衬底23可为玻璃基板，所述衬底23还同时作为所述显示面板10的彩膜基板的衬底使用。The light control layer 20 further includes a substrate 23 , the substrate 23 may be a glass substrate, and the substrate 23 is also used as a substrate of the color filter substrate of the display panel 10 .
所述光控层20还包括覆盖所述第一栅极211和所述第二栅极221的栅极绝缘层24、以及覆盖所述第一源极213、所述第一漏极214、所述第二源极223、以及所述第二漏极224的钝化层26。The light control layer 20 further includes a gate insulating layer 24 covering the first gate electrode 211 and the second gate electrode 221 , and a gate insulating layer 24 covering the first source electrode 213 , the first drain electrode 214 , the The passivation layer 26 of the second source electrode 223 and the second drain electrode 224 is formed.
一种实施例中，为进一步降低光控显示装置100对环境光的反射率，所述显示面板100的阵列基板上的薄膜晶体管中的金属元件也可采取上述光吸收层25的设计。In one embodiment, in order to further reduce the reflectivity of the light control display device 100 to ambient light, the metal elements in the thin film transistors on the array substrate of the display panel 100 may also adopt the design of the light absorbing layer 25 described above.
请参阅图3，一种实施例中，所述光吸收层25可为黑矩阵，所述黑矩阵对应于所述开关薄膜晶体管21设置，且覆盖所述开关薄膜晶体管21。Referring to FIG. 3 , in an embodiment, the light absorbing layer 25 may be a black matrix, and the black matrix is disposed corresponding to the switching thin film transistor 21 and covers the switching thin film transistor 21 .
由于所述光感薄膜晶体管22的第二有源层222需要有光入射才能响应，因此所述黑矩阵仅对应所述开关薄膜晶体管21设置即可。Since the second active layer 222 of the photosensitive thin film transistor 22 can respond only when light is incident, the black matrix can only be set corresponding to the switching thin film transistor 21 .
所述黑矩阵具有多孔结构或光子晶体结构，多孔结构和光子晶体结构可极大程度地增加所述黑矩阵对环境光的吸收，降低环境光反射。可采用光刻方法对黑矩阵的光阻进行复杂结构设计，也可采用双光子直写技术进行微结构设计，来构建光子晶体结构。The black matrix has a porous structure or a photonic crystal structure, and the porous structure and the photonic crystal structure can greatly increase the absorption of ambient light by the black matrix and reduce the reflection of ambient light. The photolithography method can be used to design the complex structure of the photoresist of the black matrix, and the two-photon direct writing technology can also be used to design the microstructure to construct the photonic crystal structure.
所述光控显示装置100还包括盖板50，所述盖板50设置于所述光控层20的外侧，即背离所述显示面板10的一侧。The light control display device 100 further includes a cover plate 50 , and the cover plate 50 is disposed on the outer side of the light control layer 20 , that is, on the side away from the display panel 10 .
请参阅图4，一种实施例中，所述光吸收层25可整面设置于所述光控层20背离所述显示面板10的一侧。Referring to FIG. 4 , in an embodiment, the light absorbing layer 25 may be disposed on the entire surface of the light control layer 20 on the side away from the display panel 10 .
所述光吸收层25可为低反射膜，通过贴合的方式设置。具体地，所述光吸收层25可为吸收可见光波段的黑膜，以降低环境光反射。The light absorbing layer 25 can be a low-reflection film, which is provided by lamination. Specifically, the light absorbing layer 25 may be a black film that absorbs visible light wavelengths to reduce ambient light reflection.
所述光控显示装置100还包括设置于所述光控层20的背离所述显示面板一侧的第一偏光片30和设置于背离所述显示面板10出光面一侧的第二偏光片40，即所述第一偏光片30和所述第二偏光片40之间夹设有所述显示面板10和所述光控层20。The light control display device 100 further includes a first polarizer 30 disposed on a side of the light control layer 20 away from the display panel and a second polarizer 40 disposed on a side away from the light-emitting surface of the display panel 10 . , that is, the display panel 10 and the light control layer 20 are sandwiched between the first polarizer 30 and the second polarizer 40 .
所述光吸收层25可设置于所述第一偏光片30的背离所述光控层20一侧，以吸收外界光线，所述光吸收层25可通过光学胶与所述第一偏光片30贴合。The light absorbing layer 25 can be disposed on the side of the first polarizer 30 away from the light control layer 20 to absorb external light. The light absorbing layer 25 can be connected to the first polarizer 30 through optical glue. fit.
一种实施例中，所述光吸收层25还可设置于所述盖板50的外侧，可通过光学胶外贴于所述盖板50的表面。In one embodiment, the light absorbing layer 25 may also be disposed on the outer side of the cover plate 50 , and may be externally attached to the surface of the cover plate 50 through optical glue.
本发明实施例通过设置不同类型的光吸收层25来构建具有低反射率的外挂式光控层，进而用于构建具有光控功能的显示装置。一种为采取黑金属作为光吸收膜层，设置于电极上，来构建具有低反射率的光控层；一种为采用双光子激光直写技术，对用于遮挡环境光的黑矩阵进行结构设计，该黑矩阵可构建为多孔结构或者光子晶体结构，从而增强对于环境光的吸收，降低反射率；另外一种为采用低反膜贴合设计，外贴于盖板表面，降低反射率。以上类型的光吸收层均可独立实现降低外挂式光控面板的反射率，从而提升整机的显示品质，提高产品竞争力。In the embodiment of the present invention, an external light control layer with low reflectivity is constructed by arranging different types of light absorption layers 25 , which is then used to construct a display device with a light control function. One is to use black metal as a light absorbing film layer and set it on the electrode to construct a light control layer with low reflectivity; the other is to use two-photon laser direct writing technology to structure the black matrix used to block ambient light. Design, the black matrix can be constructed as a porous structure or a photonic crystal structure, thereby enhancing the absorption of ambient light and reducing the reflectivity; the other is a low-reflection film lamination design, which is attached to the surface of the cover plate to reduce the reflectivity. The above types of light absorption layers can independently reduce the reflectivity of the external light control panel, thereby improving the display quality of the whole machine and improving the competitiveness of the product.
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。In the above-mentioned embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.
以上对本发明实施例所提供的一种光控显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。A light-controlled display device provided by the embodiments of the present invention has been described in detail above, and the principles and implementations of the present invention are described with specific examples in this paper. The descriptions of the above embodiments are only used to help understand the present invention Technical solutions and their core ideas; those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements to some of the technical features; and these modifications or replacements do not The essence of the corresponding technical solutions is deviated from the scope of the technical solutions of the embodiments of the present invention.
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| CN115347051A (en) * | 2022-07-27 | 2022-11-15 | Tcl华星光电技术有限公司 | Display panel, preparation method thereof and display device |
| CN116430638A (en) * | 2023-03-31 | 2023-07-14 | 江西兴泰科技股份有限公司 | Panel for reducing reflectivity of electronic paper |
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| KR102205856B1 (en) * | 2014-06-11 | 2021-01-21 | 삼성디스플레이 주식회사 | Organic light emitting diode display device including sensors |
| KR102230943B1 (en) * | 2014-08-14 | 2021-03-24 | 엘지디스플레이 주식회사 | Organic lighting emitting display device with light absorption and fabricating thereof |
| CN111399292B (en) * | 2020-04-09 | 2022-09-23 | 昆山龙腾光电股份有限公司 | Array substrate, preparation method thereof and touch liquid crystal display device |
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| US20120104430A1 (en) * | 2010-10-28 | 2012-05-03 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display |
| US20120139876A1 (en) * | 2010-12-06 | 2012-06-07 | Samsung Electronics Co., Ltd. | Light Sensing Circuit, Method Of Manufacturing The Same, And Optical Touch Panel Including The Light Sensing Circuit |
| CN105374844A (en) * | 2014-08-14 | 2016-03-02 | 乐金显示有限公司 | Organic light emitting display device including low reflective panel |
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