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WO2022074140A1 - Laser à semi-conducteur à émission par la surface - Google Patents

Laser à semi-conducteur à émission par la surface Download PDF

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Publication number
WO2022074140A1
WO2022074140A1 PCT/EP2021/077743 EP2021077743W WO2022074140A1 WO 2022074140 A1 WO2022074140 A1 WO 2022074140A1 EP 2021077743 W EP2021077743 W EP 2021077743W WO 2022074140 A1 WO2022074140 A1 WO 2022074140A1
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WIPO (PCT)
Prior art keywords
layer stack
semiconductor layer
substrate
semiconductor laser
emitting semiconductor
Prior art date
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PCT/EP2021/077743
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German (de)
English (en)
Inventor
Martin Behringer
Hubert Halbritter
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Ams Osram International GmbH
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Ams Osram International GmbH
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Publication of WO2022074140A1 publication Critical patent/WO2022074140A1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity

Definitions

  • SURFACE EMITTING SEMICONDUCTOR LASER DESCRIPTION Surface emitting semiconductor lasers, ie laser devices in which the laser light generated is emitted perpendicularly to a surface of a semiconductor layer arrangement, can be used in 3D sensor systems, for example for face recognition or for distance measurement in autonomous driving. Furthermore, they can be used in numerous consumer products, for example display devices. Efforts are generally being made to improve such surface-emitting lasers. The object of the present invention is to provide an improved surface-emitting semiconductor laser. According to embodiments, the object is solved by the subject matter of the independent patent claims. Advantageous further developments are defined in the dependent patent claims.
  • SUMMARY A surface emitting semiconductor laser includes a substrate and a semiconductor layer stack disposed over the substrate.
  • the semiconductor layer stack has a first n-conducting resonator mirror, a second n-conducting resonator mirror, a first tunnel junction and an active zone suitable for generating electromagnetic radiation.
  • the first n-conducting resonator mirror is on a side of the semiconductor layer stack that faces the substrate arranged
  • the second n-conducting resonator mirror is arranged on the side facing away from the substrate
  • the first tunnel junction is arranged adjacent to the first n-conducting resonator mirror.
  • the surface-emitting semiconductor laser also has a first current diaphragm, which is arranged adjacent to the first tunnel junction.
  • the first current diaphragm can be arranged on a p-side of the tunnel junction.
  • the first current diaphragm can be integrated into the first tunnel junction.
  • the substrate can be different from a growth substrate for growing the semiconductor layer stack.
  • the semiconductor layer stack can have a multiplicity of active zones which are arranged one above the other and which are each connected to one another via tunnel junctions.
  • the semiconductor layer stack can have a multiplicity of current diaphragms.
  • the current diaphragms can each be arranged adjacent to a tunnel junction.
  • the semiconductor layer stack can be designed in such a way that a radiation field that forms in the optical resonator during operation of the surface-emitting semiconductor laser has an intensity minimum at the position of the first tunnel junction.
  • the surface-emitting semiconductor laser also has a first contact element and a two- th contact element for impressing a current in the surface-emitting semiconductor laser, the first contact element having a cutout for decoupling generated laser radiation and the cutout having a diameter greater than 10 ⁇ m.
  • a material of the substrate can be selected from silicon or germanium.
  • the semiconductor layer stack includes In x Ga y Al 1-xy As, with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, x+y ⁇ 1.
  • the active zone may contain In x Ga y Al 1-xy As, with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, x+y ⁇ 1.
  • the surface emitting semiconductor laser can emit longer wavelength light such as infrared rays.
  • An optoelectronic semiconductor device comprises a multiplicity of surface-emitting semiconductor lasers as defined above.
  • a method of fabricating a surface emitting semiconductor laser includes forming a semiconductor stack over a growth substrate, the semiconductor stack including a first n-type cavity mirror, a second n-type cavity mirror, a first tunnel junction adjacent to the first n-type cavity - Has mirror, and an active zone suitable for generating electromagnetic radiation.
  • the method further comprises applying a substrate over a second main surface of the semiconductor layer stack, so that the first n-conducting resonator mirror is arranged on a side of the semiconductor layer stack facing the substrate, the second n-conducting resonator mirror is arranged on the front side
  • the side facing away from the substrate is arranged and the first tunnel junction is arranged adjacent to the first n-conducting resonator mirror, and the removal of the growth substrate from the semiconductor layer stack.
  • FIG. 1A shows a schematic cross-sectional view of a surface-emitting semiconductor laser according to embodiments.
  • 1B shows a cross-sectional view of a surface-emitting semiconductor laser according to further embodiments.
  • 1C shows a cross-sectional view of a surface-emitting semiconductor laser according to further embodiments.
  • FIG. 2A shows a schematic cross-sectional view of a surface-emitting semiconductor laser according to further embodiments.
  • FIG. 2B shows a schematic cross-sectional view of a surface-emitting semiconductor laser according to further embodiments.
  • FIG. 3 shows a schematic plan view of an optoelectronic semiconductor device.
  • FIG. 4A summarizes a method according to embodiments.
  • FIG. 4B shows a schematic cross-sectional view of a workpiece when carrying out a method according to embodiments.
  • DETAILED DESCRIPTION In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which specific example embodiments are shown by way of illustration. In this context, directional terminology such as “top”, “bottom”, “front”, “back”, “over”, “on”, “in front”, “behind”, “front”, “back”, etc. related to the orientation of the figures just described. Because the components of the exemplary embodiments can be positioned in different orientations, the directional terminology is used for purposes of explanation and is in no way limiting.
  • wafer or “semiconductor substrate” used in the following description may encompass any semiconductor-based structure that has a semiconductor surface. Wafer and structure are understood to include doped and undoped semiconductors, epitaxial semiconductor layers optionally supported by a base substrate, and other semiconductor structures.
  • a layer of a first semiconductor material may be grown on a growth substrate of a second semiconductor material, such as a GaAs substrate, a GaN substrate, or a Si substrate, or of an insulating material, such as a sapphire substrate .
  • a second semiconductor material such as a GaAs substrate, a GaN substrate, or a Si substrate
  • an insulating material such as a sapphire substrate
  • the semiconductor can be based on a direct or an indirect semiconductor material.
  • Examples of semiconductor materials that are particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds that can be used, for example, to generate ultraviolet, blue or longer-wave light, such as GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaInBN, Phosphide semiconductor compounds that can be used, for example, to generate green or longer-wave light, such as GaAsP, AlGaInP, GaP, AlGaP, and other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga 2 O 3 , Diamond, hexagonal BN and combinations of the above materials.
  • nitride semiconductor compounds that can be used, for example, to generate ultraviolet, blue or longer-wave light, such as GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaInBN
  • Phosphide semiconductor compounds that can be used, for example, to generate green
  • the stoichiometric ratio of the compound semiconductor materials can vary. Other examples of semiconductor materials may include silicon, silicon-germanium, and germanium. In the context of the present description, the term “semiconductor” also includes organic semiconductor materials.
  • substrate generally includes insulating, conductive, or semiconductor substrates.
  • lateral and horizontal as used in this specification are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body. This can be the surface of a wafer or a chip (die), for example.
  • the horizontal direction can, for example, lie in a plane perpendicular to a growth direction when layers are grown.
  • vertical as used in this specification is intended to describe an orientation that is essentially perpendicular to the first surface of a substrate or semiconductor body.
  • the vertical direction can correspond to a growth direction when layers are grown, for example.
  • the terms “have”, “contain”, “include”, “have” and the like are used here, these are open terms that indicate the presence of the said elements or features, the presence of further elements or However, do not exclude features.
  • the indefinite and definite articles include both the plural and the singular, unless the context clearly indicates otherwise.
  • the term “electrically connected” means a low-impedance electrical connection between the connected elements. The electrically connected elements do not necessarily have to be directly to be connected to each other.
  • FIG. 1A shows a schematic cross-sectional view of a surface-emitting semiconductor laser 10 according to embodiments.
  • the surface-emitting semiconductor laser 10 has a substrate 100 and a semiconductor layer stack 109 arranged above the substrate.
  • the semiconductor layer stack 109 comprises a first n-conducting resonator mirror 110, a second n-conducting resonator mirror, a first tunnel junction 105 and a zone 115 that is active for generating electromagnetic radiation.
  • the first n-conducting resonator mirror 110 is arranged on a side of the semiconductor layer stack which faces the substrate 100 .
  • the second n-conducting resonator mirror 120 is arranged on the side facing away from the substrate 100 .
  • the first tunnel junction 105 is arranged adjacent to the first n-conducting resonator mirror 110 .
  • An optical resonator 113 is formed between the first and the second resonator mirror 110 , 120 .
  • an active zone 115 can be arranged between the first and second semiconductor layers.
  • the active zone can have, for example, a pn junction, a double heterostructure, a single quantum well structure (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation.
  • Quantum well structure has no meaning here with regard to the dimensionality of the quantization.
  • a tunnel junction or a tunnel diode has a p ++ -doped layer, an n ++ -doped layer and optionally an intermediate layer. Holes are injected into the active region through the tunnel junction, whose n-side is connected to a positive electrode. As a result, the injected holes recombine with the electrons provided by a negative electrode to emit photons.
  • the tunnel junction is particularly suitable for electrically connecting a p-type semiconductor region to the first n-doped resonator mirror 110 in series. Both the first and the second resonator mirror are designed as DBR mirrors.
  • both the first and the second resonator mirror 110, 120 each have alternately stacked first layers and second layers of a second composition.
  • the alternately stacked layers of the first or second resonator mirror 110, 120 each have different refractive indices.
  • the layers can alternately have a high refractive index (n>3.1) and a low refractive index (n ⁇ 3.1).
  • the layer thickness can be ⁇ /4 or a multiple of ⁇ /4, where ⁇ indicates the wavelength of the light to be reflected in the corresponding medium.
  • the first or the second resonator mirror 110, 120 can have, for example, 2 to 50 individual layers.
  • a typical layer thickness of the individual layers can be about 30 to 150 nm, for example 50 nm.
  • the semiconductor layer stack can also contain one or two or more layers that are thicker than about 180 nm, for example thicker than 200 nm.
  • the first resonator mirror 110 can have a total reflection have an efficiency of 99.8% or more for the laser radiation.
  • the second resonator mirror 120 can be designed as a decoupling mirror for the radiation from the resonator and has, for example, a lower reflectivity than the first resonator mirror. Electromagnetic radiation generated in the active zone 115 can be reflected between the first resonator mirror 110 and the second resonator mirror 120 such that a radiation field for the generation of coherent radiation (laser radiation) forms in the resonator via induced emission in the active zone.
  • the distance between the first and the second resonator mirror 110, 120 corresponds to at least half the effective emitted wavelength ( ⁇ /2n, where n corresponds to the refractive index of the active zone), so that standing waves can form within the resonator.
  • the generated laser radiation 30 can be coupled out of the resonator via the second resonator mirror 120, for example.
  • the surface-emitting semiconductor laser 10 thus represents a so-called VCSEL, ie surface-emitting semiconductor laser with a vertical resonator (“Vertical-Cavity Surface-Emitting Laser”).
  • the alternately stacked layers for forming the first and/or second resonator mirror 110 Have 120 semiconductor layers, of which at least one layer is doped in each case.
  • At least one semiconductor layer of the stacked layers of the first resonator mirror 110 is n-conducting.
  • at least one of the semiconductor layers of the second resonator mirror 120 can be n-conducting.
  • at least the first or the second resonator mirror 110, 120 dielectric layer ten.
  • the alternately arranged dielectric layers can alternately have a high refractive index (n>1.7) and a low refractive index (n ⁇ 1.7).
  • Both the first and the second resonator mirror 110, 120 are each designed as an n-conducting resonator mirror. Both resonator mirrors thus include n-doped semiconductor layers.
  • n-doped semiconductor layers particularly in the nitride compound semiconductor material system, have higher charge carrier mobility, lower losses and improved thermal properties than p-doped layers. Furthermore, they exhibit reduced absorption of the electromagnetic radiation generated. Because n-doped layers are used in the surface-emitting semiconductor laser described here, current spread can be improved. As a result, in particular, surface-emitting semiconductor lasers having a large aperture d can be realized. Despite the large aperture, a homogeneous current injection can be achieved.
  • the tunnel junction 105 is suitable for electrically connecting a first semiconductor region 125, which has a semiconductor layer of the p-type and is, for example, entirely of the p-type, to the first resonator mirror 110 in series.
  • the tunnel junction 105 is arranged adjacent to the first resonator mirror 110 .
  • the term “adjacent to” can mean that the tunnel junction 105 directly adjoins the resonator mirror 110 .
  • Further intermediate layers can be arranged between the tunnel junction 105 and the first resonator mirror 110 as long as they do not impair the functionality of this arrangement.
  • a second semiconductor region 130 which has an n-type layer and is, for example, entirely n-type, is arranged between the active zone 115 and the second resonator mirror 120.
  • a first contact element 101 for example a contact metallization, is arranged on the side of the semiconductor layer stack 109 facing away from the substrate 100.
  • a second contact element 102 is arranged, for example, on that side of the substrate 100 which is remote from the semiconductor layer stack 109 .
  • charge carriers can be injected into the semiconductor layer stack 109 via the first and second contact elements 101, 102 and can recombine, for example, in the active zone 115 to generate radiation.
  • the first contact element 101 has a cutout 112 for the passage of radiation and is designed, for example, as a ring contact.
  • An opening in the ring contact for the passage of radiation can be circular or elliptical in plan view of the first main surface 103 of the semiconductor layer stack 109 .
  • an elliptical shape of the recess 112 can influence the polarization of the generated electromagnetic radiation.
  • a diameter d of the cutout 112 of the ring contact can, for example, be greater than 10 ⁇ m, for example greater than 20 ⁇ m.
  • the first semiconductor region 125 which has a p-doped layer, is arranged on the side of the semiconductor layer stack 109 facing the substrate 100.
  • FIG. The semiconductor layer stack 109 is usually grown on a growth substrate by epitaxial growth of the individual semiconductor layers. According to embodiments, when a so-called “thin film” component is produced, after the semiconductor layer stack has grown, a substrate different from the growth substrate can be bonded to the resulting growth surface. Then the growth substrate can be removed from the semiconductor layer stack.
  • the result is a semiconductor layer stack 109 with a layer sequence of the individual semiconductor layers that is inverted relative to the direction of growth.
  • the first semiconductor region 125 which has a p-type having doped semiconductor layer, on the side of the substrate 100 arrange. Accordingly, it is possible to produce a surface-emitting semiconductor laser with n-doped resonator mirrors using a so-called thin-film method or thin-GaN method, so that the first p-doped semiconductor region 125 on the substrate 100 facing side of the semiconductor layer stack 100 is arranged.
  • the substrate 100 can be different from the growth substrate and can comprise silicon or germanium, for example.
  • the first tunnel junction can be arranged at the position of a node of the standing wave forming in the optical resonator. In this way, the absorption of electromagnetic radiation by the tunnel junction is reduced.
  • 1B shows a schematic cross-sectional view of the surface-emitting semiconductor laser according to further embodiments. In addition to the components shown in FIG. 1A, this has a first current diaphragm 135 . This can be arranged for example in contact with the first tunnel junction on the side facing away from the first resonator mirror 110 .
  • the current diaphragm 135 can be designed as an oxide diaphragm, for example.
  • the Al-doped layer of the first semiconductor region 125 with a high aluminum content is laterally oxidized, so that a non-oxidized region of high conductivity is formed in a central region and an oxidized region of lower conductivity is formed in the edge region.
  • the current flow within the semiconductor layer stack 109 can be concentrated on the central region of the semiconductor layer stack 109 via the current diaphragms, as a result of which a threshold current density is achieved in a simplified manner on the one hand. Furthermore, the risk of non-radiative recombination in edge regions of the semiconductor layer stack 109 can be reduced.
  • the current diaphragm 135 is arranged on the side of the tunnel junction 105 facing away from the first resonator mirror 110 and thus on the p-side, its concentrating effect can be intensified. More precisely, due to the reduced mobility of the holes, they do not move back to the edge area as quickly.
  • the first current iris 135 is formed as part of the tunnel junction 105 according to embodiments. For example, part of the p-doped layer of the tunnel junction 105 may be oxidized.
  • a current diaphragm can also be formed in the semiconductor layer stack 109 by means of electrical sclerosing, for example by implantation, eg proton implantation.
  • the current diaphragm 135 can be arranged in the vicinity of an intensity node of the standing wave that is being formed. That way the through Absorption generated laser radiation can be reduced by the first current diaphragm 135.
  • 1C shows a schematic cross-sectional view of a surface-emitting semiconductor laser according to further embodiments. Deviating from the embodiments shown in FIG.
  • FIG. 2A shows a schematic Cross-sectional view of a surface-emitting semiconductor laser 10 according to further embodiments.
  • a multiplicity of active zones 115 are formed in the semiconductor layer stack 109 here. The multiplicity of active zones 115 each adjoin a first semiconductor region 125, which has a p-doped semiconductor layer, and a second semiconductor region 130, which has an n-doped semiconductor layer.
  • FIG. 2B shows a schematic cross-sectional view of a surface-emitting semiconductor laser according to further embodiments.
  • the surface-emitting semiconductor laser 10 has a multiplicity of further current diaphragms 136, which can be designed similarly to the first current diaphragm 135.
  • the additional current diaphragms 136 can each be in be arranged in the first p-doped semiconductor region 125 .
  • the tunnel junction 105 can also be formed in a part of the tunnel junction 105 . Due to the presence of the multiplicity of additional flow diaphragms 136, the flow of current can be further improved.
  • the position of the tunnel transitions 106, 105 can be designed in such a way that they are each arranged at nodes of standing waves of the electromagnetic radiation that are forming.
  • the further current diaphragms can also be arranged in areas with low intensity, so that only a small part of the electromagnetic radiation generated is absorbed by the current diaphragms.
  • 3 shows an optoelectronic semiconductor device with a multiplicity of surface-emitting semiconductor lasers as described above.
  • the optoelectronic semiconductor device can be, for example, a display device, a projection device or a laser source for a sensor, for example a LIDAR system.
  • the optoelectronic semiconductor device can also represent a lighting solution. For example, they can be used to implement three-dimensional time-of-flight/face recognition lighting or lighting with structured light. 4A summarizes a method according to embodiments.
  • a method for producing a surface-emitting semiconductor laser includes forming (S100) a semiconductor layer stack over a growth substrate, the semiconductor layer stack having a first n-type resonator mirror, a second n-type resonator mirror, a first tunnel junction adjacent to the first n-type Re- has a sonator mirror and a zone that is active for generating electromagnetic radiation.
  • the method further includes the application (S110) of a substrate over a second main surface of the semiconductor layer stack, so that the first n-conducting resonator mirror is arranged on a side of the semiconductor layer stack facing the substrate, the second n-conducting resonator mirror is arranged on the side facing away from the substrate and the first tunnel junction is arranged adjacent to the first n-type resonator mirror, and removing (S120) the growth substrate from the semiconductor layer stack.
  • FIG. 4B shows a schematic cross-sectional view of a workpiece 15 when carrying out a method according to embodiments.
  • a semiconductor layer stack 109 has grown over a suitable growth substrate 118, which can be made of sapphire, for example.
  • the semiconductor layer stack 109 has, for example, a first resonator mirror 110 and a second resonator mirror 120, an active zone 115 which is suitable for generating electromagnetic radiation, and a first tunnel junction 105.
  • the semiconductor layer stack 109 can have any other layers that have been explained with reference to FIGS. 1A to 2B.
  • a first semiconductor region 125 having a p-type layer and a second semiconductor region 130 having an n-type layer are arranged on opposite sides of the active zone 115 .
  • the first semiconductor region 125 is grown after the second semiconductor region 130 has been grown.
  • the second resonator mirror 120 is arranged on the side of the semiconductor layer stack 109 facing the growth substrate 118 .
  • Tunnel junctions 106 can be provided in order to connect a plurality of active zones 115 in series. pels 109 arranged.
  • the first tunnel junction 105 is arranged adjacent to the first resonator mirror 110 .
  • the substrate (not shown in FIG. 4B) is applied over the first main surface 104 of the semiconductor layer stack 109.
  • FIG. 4B the growth substrate 118 is removed.
  • the order of the layers over the substrate 100 is reversed from the order of growth.
  • the substrate 100 is different from the growth substrate 118 . Further elements, which have been explained with reference to FIGS. 1A to 2B, can then be formed.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser à semi-conducteur à émission par la surface (10) qui comprend un substrat (100) et un empilement de couches semi-conductrices (109), qui est disposé sur le substrat (100). L'empilement de couches semi-conductrices (109) comprend un premier miroir à cavité à conduction n (110), un second miroir à cavité à conduction n (120), une première jonction tunnel (105) et une zone active (115), qui est appropriée pour générer un rayonnement électromagnétique (30). Le premier miroir à cavité à conduction n (110) est disposé sur un côté de l'empilement de couches semi-conductrices (109) faisant face au substrat (100), le second miroir à cavité conductrice n (120) est disposé sur un côté opposé au substrat (100), et la première jonction tunnel (105) est adjacente au premier miroir à cavité conductrice n (110).
PCT/EP2021/077743 2020-10-08 2021-10-07 Laser à semi-conducteur à émission par la surface Ceased WO2022074140A1 (fr)

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DE102020126388.0A DE102020126388A1 (de) 2020-10-08 2020-10-08 Oberflächenemittierender halbleiterlaser
DE102020126388.0 2020-10-08

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DE102023104674A1 (de) * 2023-02-27 2024-08-29 Trumpf Photonic Components Gmbh VCSEL zum Erzeugen eines Laserlichts
DE102023116268A1 (de) 2023-06-21 2024-12-24 Trumpf Photonic Components Gmbh Oberflächenemittierender Halbleiterlaser mit vertikaler Kavität und Verfahren zum Herstellen eines solchen
DE102023125473A1 (de) * 2023-09-20 2025-03-20 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Oberflächenemittierender Diodenlaser-Chip und Diodenlaser

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US20010050934A1 (en) * 2000-05-31 2001-12-13 Choquette Kent D. Long wavelength vertical cavity surface emitting laser
US20040218655A1 (en) * 2003-04-30 2004-11-04 Ashish Tandon GaAs-based long-wavelength laser incorporating tunnel junction structure
US20090168825A1 (en) * 2007-12-26 2009-07-02 Sony Corporation Light-emitting element assembly and method for manufacturing the same
US20200278426A1 (en) * 2019-03-01 2020-09-03 Vixar, Inc. 3D and LiDAR Sensing Modules

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US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US20150311673A1 (en) 2014-04-29 2015-10-29 Princeton Optronics Inc. Polarization Control in High Peak Power, High Brightness VCSEL
JP7627482B2 (ja) 2017-10-02 2025-02-06 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｉｉｉ族窒化物面発光レーザおよび製作方法

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US20010050934A1 (en) * 2000-05-31 2001-12-13 Choquette Kent D. Long wavelength vertical cavity surface emitting laser
US20040218655A1 (en) * 2003-04-30 2004-11-04 Ashish Tandon GaAs-based long-wavelength laser incorporating tunnel junction structure
US20090168825A1 (en) * 2007-12-26 2009-07-02 Sony Corporation Light-emitting element assembly and method for manufacturing the same
US20200278426A1 (en) * 2019-03-01 2020-09-03 Vixar, Inc. 3D and LiDAR Sensing Modules

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