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WO2021256258A1 - Dispositif de traitement par plasma et procédé de traitement par plasma - Google Patents

Dispositif de traitement par plasma et procédé de traitement par plasma Download PDF

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Publication number
WO2021256258A1
WO2021256258A1 PCT/JP2021/020961 JP2021020961W WO2021256258A1 WO 2021256258 A1 WO2021256258 A1 WO 2021256258A1 JP 2021020961 W JP2021020961 W JP 2021020961W WO 2021256258 A1 WO2021256258 A1 WO 2021256258A1
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Prior art keywords
plasma
gas
carbon
substrate
processing container
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English (en)
Japanese (ja)
Inventor
貴士 松本
亮 清水
珠樹 湯浅
亮太 井福
真 和田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • This disclosure relates to a plasma processing apparatus and a plasma processing method.
  • a microwave introduction module which is arranged on the top plate of a processing container and introduces a microwave for generating plasma from gas into the inside of the processing container, and a top plate of the processing container are formed.
  • a microwave plasma processing apparatus having a plurality of gas supply holes for introducing gas into the plasma processing space, each of the plurality of gas supply holes expanding from the pores of the gas supply hole and described above.
  • Plasma treatment having a cavity that opens into the plasma processing space, the diameter of the cavity on the plasma processing space side is 3 mm or more, and is 1/8 or less of the surface wave wavelength of the microwave in the plasma.
  • the device is disclosed.
  • the inside surface of the top plate of the processing container has been described to spray yttria (Y 2 O 3).
  • the technology according to the present disclosure performs suitable plasma treatment by suppressing the generation of particles and the generation of abnormal discharge.
  • One aspect of the present disclosure is an apparatus for plasma-treating a substrate in a processing container, wherein the processing container has a side wall and a top plate portion, is arranged on the top plate portion, and microwaves for generating plasma.
  • the gas is introduced through the microwave introducing means for introducing the gas into the processing container, the mounting table provided in the processing container on which the substrate is placed, and the gas supply hole provided in the top plate portion. It has a gas supply mechanism for supplying into the processing container, and the surface inside the processing container and the inner surface of the gas supply hole in the top plate portion are covered with a oxalic acid anodic oxide film.
  • Y 2 O 3 sprayed coating, fine particle size Y 2 O 3 sprayed coating is a graph showing changes in the number of particles with respect to the output of each microwave oxalate anodic oxide coating .. It is sectional drawing of the conventional gas supply hole in which an abnormal discharge occurred.
  • a carbon-based film for example, a carbon material such as graphene, carbon nanotube, or diamond-like carbon is formed on a substrate, for example, a semiconductor wafer (hereinafter, may be referred to as a “wafer”).
  • a plasma CVD device and an ALD device have been conventionally used.
  • the inner wall of the chamber made of aluminum alloy is covered with yttria (Y 2 O 3) sprayed coating to protect from wear by plasma.
  • Hydrogen gas (H 2 ) which is a reducing gas, is used in the film forming process for forming the carbon material, but the Y 2 O 3 spray film is damaged by the plasma containing H 2, and the wafer.
  • the problem is that a large amount of particles are generated on the top. Therefore, there is a demand for a material having higher resistance to plasma containing H 2 than the Y 2 O 3 sprayed film.
  • the technique according to the present disclosure suppresses both particle generation and abnormal discharge at the same time by applying a protective film in the chamber, which is more resistant to plasma containing H 2 than the Y 2 O 3 sprayed film. And perform suitable plasma treatment.
  • FIG. 1 is a cross-sectional view schematically showing the configuration of the plasma processing apparatus 1 according to the embodiment.
  • the plasma processing apparatus 1 is arranged in a processing container 11 which is a chamber for accommodating a wafer W and performing plasma processing, a mounting table 12 on which the wafer W is placed, and a processing container 11.
  • the processing container 11 is grounded.
  • the processing container 11 is formed of a metal material such as aluminum and an alloy thereof, has a substantially cylindrical shape, and has a plate-shaped top plate portion 21 and a bottom portion 22 and a side wall 23 connecting them. ..
  • the microwave introduction device 15 is provided on the upper part of the processing container 11 and functions as a plasma generation means for introducing an electromagnetic wave (microwave) into the processing container 11 to generate plasma.
  • the top plate portion 21 has a plurality of openings into which the microwave radiation mechanism 53 and the gas introduction nozzle 41, which will be described later, of the microwave introduction device 15 are fitted.
  • the side wall 23 has an loading / unloading port 24 for loading / unloading the wafer W, which is a substrate to be processed, with and from a transport chamber (not shown) adjacent to the processing container 11.
  • the carry-in outlet 24 is opened and closed by the gate valve 25.
  • An exhaust device 14 is provided on the bottom portion 22.
  • the exhaust device 14 is connected to an exhaust pipe 26 provided at the bottom 22.
  • the exhaust device 14 includes a vacuum pump (not shown).
  • the inside of the processing container 11 is exhausted through the exhaust pipe 26 by this vacuum pump.
  • the pressure in the processing container 11 is controlled by a pressure control valve (not shown) provided in the exhaust device 14.
  • the mounting table 12 has a disk shape and is made of ceramics such as AlN.
  • the mounting table 12 is supported by a support member 30 made of ceramics such as cylindrical AlN extending upward from the center of the bottom of the processing container 11.
  • a guide ring 31 for guiding the wafer W is provided on the outer edge of the mounting table 12.
  • an elevating pin (not shown) for raising and lowering the wafer W is provided so as to be retractable with respect to the upper surface of the mounting table 12.
  • a heater 32 is embedded inside the mounting table 12, and the heater 32 heats the wafer W on the mounting table 12 by the electric power supplied from the heater power supply 33.
  • thermocouple (not shown) is inserted in the mounting table 12, and the temperature of the wafer W can be heated to a desired temperature in the range of, for example, 150 to 800 ° C. based on the signal from the thermocouple. ..
  • An electrode 34 having the same size as the wafer W is embedded above the heater 32 in the mounting table 12, and a high-frequency power supply 35 is electrically connected to the electrode 34.
  • a high frequency bias for drawing ions is applied from the high frequency power supply 35 to the mounting table 12.
  • the high frequency power supply 35 does not need to be provided depending on the characteristics of the plasma processing. Further, in this example, the high frequency bias has been described as an example for drawing in ions, but a DC bias may be applied by connecting a DC power supply. It is not necessary to provide a DC power supply specially depending on the characteristics of plasma processing.
  • the gas supply mechanism 13 is for introducing the plasma-generated gas and the raw material gas for forming the graphene structure into the processing container 11, and has a plurality of gas introduction nozzles 41.
  • the gas introduction nozzle 41 is provided on the top plate portion 21 of the processing container 11.
  • Each gas introduction nozzle 41 is connected to a gas supply pipe 42.
  • the gas supply pipe 42 is branched into five branch pipes 42a, 42b, 42c, 42d, and 42e, and these branch pipes 42a, 42b, 42c, 42d, and 42e are designated as rare gases that are plasma-producing gases, respectively.
  • a cleaning gas supplied O 2 gas as an oxidizing gas is O 2 gas supply source 44, N 2 gas supply source 45 supplying N 2 gas used as a purge gas or the like ,
  • the branch pipes 42a, 42b, 42c, 42d, and 42e are provided with a mass flow controller for flow rate control and valves arranged before and after the mass flow controller.
  • the plasma generation gas is not limited to Ar gas, and may be, for example, He gas, Ne gas, Kr gas, or Xe gas.
  • the carbon-containing gas is not limited to acetylene (C 2 H 2 ) gas, and may be, for example, ethylene (C 2 H 4 ) gas, methane (CH 4 ) gas, or propylene (C 3 H 6 ) gas.
  • the microwave introduction device 15 is provided above the processing container 11 and functions as a plasma generation means for introducing an electromagnetic wave (microwave) into the processing container 11 to generate plasma.
  • the microwave introduction device 15 includes a top plate portion 21 of a processing container 11 that functions as a top plate, a microwave output unit 50 that generates microwaves and distributes and outputs microwaves to a plurality of paths, and microwaves. It has an antenna unit 51 that introduces microwaves output from the output unit 50 into the processing container 11.
  • the microwave output unit 50 includes a microwave power supply (not shown), a microwave oscillator, an amplifier that amplifies the microwave oscillated by the microwave oscillator, and a distributor that distributes the microwave amplified by the amplifier to a plurality of paths.
  • the microwave oscillator oscillates microwaves (eg, PLL oscillation) at 860 MHz, for example.
  • the microwave frequency is not limited to 860 MHz, and a microwave frequency in the range of 700 MHz to 10 GHz such as 2.45 GHz, 8.35 GHz, 5.8 GHz, 1.98 GHz, etc. can be used.
  • the antenna unit 51 includes a plurality of antenna modules (not shown), and each antenna module has an amplifier unit 52 that amplifies and outputs microwaves from the microwave output unit 50, and a micro that is output from the amplifier unit 52. It has a microwave radiation mechanism 53 that radiates waves into the processing container 11.
  • a plurality of microwave radiation mechanisms 53 are provided on the top plate portion 21, and each microwave radiation mechanism 53 has a microwave transmission plate 54 exposed in the processing container 11.
  • the microwave transmission plate 54 is made of a dielectric and has a shape capable of efficiently radiating microwaves in the TE mode, for example, a disk shape as shown in FIG.
  • the top plate portion 21 is arranged at six locations at equal intervals in and around the center of the top plate portion 21.
  • the corresponding microwave transmission plate 54 is evenly hexagonal around the center of the top plate portion 21 and its periphery. It is arranged so that it is in the closest arrangement. That is, one of the seven microwave transmission plates 54 is arranged in the center of the top plate portion 21, and the other six microwave transmission plates 54 are arranged at equal intervals around the center. These seven microwave transmission plates 54 are arranged so that the adjacent microwave transmission plates are all evenly spaced.
  • the number of microwave radiation mechanisms 53 is not limited to seven.
  • a fluorine-based resin such as quartz, ceramics, or polytetrafluoroethylene resin, a polyimide resin, or the like can be used.
  • the plurality of gas introduction nozzles 41 of the gas supply mechanism 13 are arranged so as to surround the periphery of the central microwave transmission plate 54. More specifically, in the present embodiment, for example, 12 gas introduction nozzles 41 are provided on the top plate portion 21 so as to surround the periphery of the central microwave transmission plate 54 at equal intervals.
  • a gas supply hole 71 opened in the processing container 11 is formed at the tip of the gas introduction nozzle 41.
  • the gas supply hole 71 is located in a recess 72 called a dimple formed on the lower surface side of the top plate portion 21.
  • the surface of the top plate 21 facing the inside of the processing container 11, the inner surface of the gas supply hole 71, and the surface of the recess 72 are covered with the oxalic acid anodic oxide film FCY. Further, a plurality of minute pores (pores) of the oxalic acid anodic oxide film are sealed with SiO 2 by ethyl silicate in a silane solution.
  • the control unit 16 typically consists of a computer and controls each unit of the plasma processing device 1.
  • the control unit 16 includes a storage unit that stores a process sequence of the plasma processing apparatus 1 and a process recipe that is a control parameter, an input means, a display, and the like, and can perform predetermined control according to a selected process recipe. It is possible. That is, the control unit 16 having such a configuration is a plasma processing device necessary for forming a carbon-based film on the wafer W by, for example, plasma treatment described later, that is, plasma using a mixed gas of carbon-containing gas, hydrogen, and a rare gas. Control each part of 1.
  • the wafer W is processed by hydrogen plasma, or before the step of forming the carbon-based film, a dummy wafer is placed on the mounting table 12.
  • Each part of the plasma processing apparatus 1 is controlled so as to form a carbon-based protective film on the surface inside the processing container 11 by plasma generated by a mixed gas of a carbon-containing gas and a rare gas.
  • a gas supply mechanism 13, an exhaust device 14, and a microwave introduction device 15 can be exemplified.
  • the wafer W is first carried into the processing container 11 and placed on a mounting table 12. Place it. Then, acetylene (C 2 H 2 ) as a carbon-containing gas, which is a film-forming raw material gas, is supplied into the processing container to turn the film-forming raw material gas into plasma.
  • acetylene (C 2 H 2 ) as a carbon-containing gas which is a film-forming raw material gas
  • Ar gas which is a plasma generating gas
  • Ar gas is supplied directly under the top plate portion 21 of the processing container 11 from the gas supply hole 71 via the gas introduction nozzle 41, and the microwave output of the microwave introduction device 15 is provided.
  • the microwaves distributed and output from the unit 50 are irradiated from the microwave transmission plate 54 into the processing container 11 via the microwave radiation mechanism 53.
  • surface wave plasma by Ar gas is generated in the region directly below the top plate portion 21, and that region becomes the plasma generation region.
  • acetylene (C 2 H 2 ) gas as a carbon-containing gas which is a film-forming raw material gas, and H 2 gas, if necessary, are supplied from the gas introduction nozzle 41. These are excited by plasma, dissociated, and supplied to the wafer W placed on the mounting table 12.
  • the wafer W is arranged in a region distant from the plasma generation region, and since the plasma diffused from the plasma generation region is supplied to the wafer W, the plasma becomes a low electron temperature plasma on the wafer W and the damage is low. Moreover, it becomes a high-density plasma mainly composed of radicals.
  • the carbon-containing gas can be reacted on the wafer surface, and a carbon-based film having good crystallinity (for example, a graphene structure) can be formed on the wafer surface.
  • the graphene structure can be more preferably formed on the wafer W. Cleaning of the surface of the wafer W can be performed by, for example, hydrogen plasma.
  • Ar gas from the Ar gas supply source 43, the H 2 gas from the H 2 gas supply source 46 is supplied through the gas supply holes 71 into the processing vessel 11 through the gas introduction nozzle 41. Further, such surface treatment with hydrogen plasma is performed under the following conditions, for example.
  • Gas flow rate: Ar / H 2 0 to 2000/1 to 2000 sccm Pressure: 0.001 to 5 Torr (0.13 to 666 Pa)
  • the carbon-based film can be more preferably formed on the surface of the wafer W.
  • a carbon-based protective film may be formed on the surface of the processing container 11 by plasma using a mixed gas of a carbon-containing gas and a rare gas.
  • a mixed gas of a carbon-containing gas and a rare gas it is possible to prevent the surface inside the processing container 11 from being damaged by the plasma generated during the film formation of the graphene structure, particularly hydrogen plasma.
  • a dummy wafer is once placed on the mounting table 12, and a carbon-based protective film is formed on the surface inside the processing container 11 in that state.
  • the dummy wafer is carried out from the processing container 11, and then the wafer to be film-formed is carried into the processing container 11 to clean the wafer surface with the hydrogen plasma described above.
  • a treatment for forming a target carbon-based film such as a graphene structure may be performed.
  • the dummy wafer is carried into the processing container 11 to form a carbon-based protective film on the surface inside the processing container 11, and then the dummy wafer is formed. May be carried out from the processing container 11, and then the wafer to be film-formed may be carried into the processing container 11 to form a target carbon-based film such as a graphene structure.
  • Cleaning treatment with hydrogen plasma, forming process of a carbon-based protective film if the plasma treatment of the formation process, such as carbon-based films of interest are formed in generally the surface of the processing container Y 2 O 3 sprayed coating As described above, it is particularly susceptible to damage by plasma containing H 2, and as a result, many particles may be generated on a substrate such as a wafer.
  • the processing container 11 of the plasma processing apparatus 1 has an oxalic acid anodic oxide film on the surface inside the processing container 11 in the top plate portion 21, the inner surface of the gas supply hole 71, and the surface of the recess 72. Since the plurality of minute pores (pores) of the oxalic acid anodic oxide film are sealed with SiO 2 by silane solution ethyl silicate, they are highly resistant to plasma containing H 2. It has, and it is possible to significantly suppress the generation of particles.
  • the graph of FIG. 5 shows particles when the treatment time is 10 minutes and the pressure is changed to 1 Torr (133 Pa), 1.5 Torr (200 Pa), and 2 Torr (266 Pa) under the same plasma conditions as the experimental results shown in FIG. Shows the number.
  • a sealing treatment has been oxalate anodic oxide coating is SiO 2 with the silane solution of ethyl silicate, Y 2 O 3 sprayed coating, fine particle size Y 2 O 3 sprayed coating.
  • the number of particles generated is about 1/1000 to about 1/6 (against Y 2 O 3 sprayed film) and about 1/1000 to about 1/3 (against fine particle size Y 2 O 3 sprayed film). It was confirmed that there were few. Therefore, also in the plasma at low pressure, it was found that the hydrogen plasma resistance is remarkably improved than Y 2 O 3 sprayed coating, fine particle size Y 2 O 3 sprayed coating.
  • the oxalic acid anodic oxide film is a particle generated more than the Y 2 O 3 sprayed film and the fine particle size Y 2 O 3 sprayed film. It was confirmed that the number of was extremely small. In the graph of FIG. 6, data could not be obtained for the oxalic acid anodic oxide film when the microwave output was "100/200 x 6", but the tendency was the same as for other outputs. It can be inferred.
  • the oxalic acid anodic oxide film sealed with SiO 2 by silane solution ethyl silicate was compared with the oxalic acid anodic acid film filled with pressurized steam and the hard alumite sealed. It has also been confirmed that there is little change in the surface layer and therefore little physical change in the surface.
  • the oxalic acid anodic oxide film FCY sealed with SiO 2 by the silane solution ethyl silicate can form the oxalic acid anodized film FCY even on the inner surface of the gas supply hole 71. Therefore, the occurrence of abnormal discharge could be significantly suppressed, and the occurrence of by-product Z could not be confirmed. Therefore, by covering the inner surface of the treatment container 11, particularly the top plate portion 21, the recess 72, and the inner surface of the gas supply hole 71 with the oxalic acid anodic oxide film sealed with SiO 2 by the silane solution ethyl silicate. , The generation of particles can be greatly suppressed.
  • the side wall 23 of the treatment container 11 is specially sealed with SiO 2 by silane solution ethyl silicate. Even if the treated oxalic acid anodic oxide film protective film is not formed, it does not affect the formation process of the carbon-based film, and the generation of particles is not significantly increased. This has been confirmed in the experimental results described above. Therefore, in the case of the carbon-based film forming treatment or the like, it is not necessary to form the oxalic acid anodic oxide film protective film sealed with SiO 2 by the silane solution on the side wall 23 of the processing container 11.
  • Plasma processing device 11 Processing container 12 Mounting table 13 Gas supply mechanism 14 Exhaust device 15 Microwave introduction device 16 Control unit 21 Top plate unit 23 Side wall 71 Gas supply hole W wafer

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  • Analytical Chemistry (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • Metallurgy (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

L'invention porte sur un appareil pour effectuer un traitement par plasma sur un substrat dans un récipient de traitement ayant des parois latérales et une section de plaque supérieure, l'appareil comprenant : un dispositif d'introduction de micro-ondes qui est disposé sur la section de plaque supérieure et qui introduit des micro-ondes pour générer un plasma dans le récipient de traitement ; un étage de placement qui est disposé dans le récipient de traitement et sur lequel est placé le substrat ; et un mécanisme d'alimentation en gaz qui fournit un gaz dans le récipient de traitement par l'intermédiaire d'un trou d'alimentation en gaz disposé dans la section de plaque supérieure, une surface à l'intérieur du récipient de traitement de la section de plaque supérieure et une surface interne du trou d'alimentation en gaz étant recouvertes par un revêtement d'oxyde anodique d'acide oxalique.
PCT/JP2021/020961 2020-06-15 2021-06-02 Dispositif de traitement par plasma et procédé de traitement par plasma Ceased WO2021256258A1 (fr)

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KR102686817B1 (ko) * 2022-03-31 2024-07-19 한국핵융합에너지연구원 마이크로웨이브 다이아몬드 성막 장치
JP2024088507A (ja) * 2022-12-20 2024-07-02 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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JPH07180091A (ja) * 1993-12-22 1995-07-18 Sumitomo Metal Ind Ltd アルミニウム板、その製造方法及び該アルミニウム板を用いた防着カバー
JP2009173965A (ja) * 2008-01-22 2009-08-06 Tokyo Electron Ltd 基板処理装置用の部品及び皮膜形成方法
JP2011054781A (ja) * 2009-09-02 2011-03-17 Tokyo Electron Ltd プラズマ処理装置
JP2012176856A (ja) * 2011-02-25 2012-09-13 Tokyo Electron Ltd カーボンナノチューブの形成方法、その前処理方法、電子放出素子及び照明装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07180091A (ja) * 1993-12-22 1995-07-18 Sumitomo Metal Ind Ltd アルミニウム板、その製造方法及び該アルミニウム板を用いた防着カバー
JP2009173965A (ja) * 2008-01-22 2009-08-06 Tokyo Electron Ltd 基板処理装置用の部品及び皮膜形成方法
JP2011054781A (ja) * 2009-09-02 2011-03-17 Tokyo Electron Ltd プラズマ処理装置
JP2012176856A (ja) * 2011-02-25 2012-09-13 Tokyo Electron Ltd カーボンナノチューブの形成方法、その前処理方法、電子放出素子及び照明装置

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