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WO2021137762A1 - Procédé de fabrication d'une pluralité de modules optoélectroniques - Google Patents

Procédé de fabrication d'une pluralité de modules optoélectroniques Download PDF

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Publication number
WO2021137762A1
WO2021137762A1 PCT/SG2020/050788 SG2020050788W WO2021137762A1 WO 2021137762 A1 WO2021137762 A1 WO 2021137762A1 SG 2020050788 W SG2020050788 W SG 2020050788W WO 2021137762 A1 WO2021137762 A1 WO 2021137762A1
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic
supporting member
curable material
optoelectronic devices
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/SG2020/050788
Other languages
English (en)
Inventor
Jens Geiger
Martin HABLÜTZEL
Simon GUBSER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Sensors Asia Pte Ltd
Original Assignee
Ams Sensors Asia Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams Sensors Asia Pte Ltd filed Critical Ams Sensors Asia Pte Ltd
Publication of WO2021137762A1 publication Critical patent/WO2021137762A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Definitions

  • the disclosure relates to a method of manufacturing a plurality of optoelectronic modules.
  • the disclosed method may allow for the manufacture of a plurality of optoelectronic modules without an intermediate circuit substrate, such as for example a flexible cable or printed circuit board. This may avoid the use of one or more wirebonds, e.g. for connecting at least one optoelectronic device to the intermediate circuit substrate.
  • a size or footprint of each optoelectronic module may be reduced. For example, an extension of each optoelectronic module in the longitudinal or vertical direction and/or the lateral direction of each optoelectronic module may be reduced.
  • At least two of the plurality optoelectronic devices may be associated with each other.
  • the method may comprise arranging the plurality of optoelectronic devices between the first supporting member and the second supporting member, e.g. such that the at least two associated optoelectronic devices may be arranged in proximity to each other.
  • the method may comprise singulating the intermediate module portion, e.g. so as to form the plurality of optoelectronic modules.
  • Each optoelectronic module may comprise the at least two associated optoelectronic devices.
  • the disclosed method may allow for the manufacture of the optoelectronic modules at reduced costs. This may be due to a number of method steps and/or materials used for the manufacture of the optoelectronic modules being reduced.
  • the method 200 comprises singulating the intermediate module portion 224 so as to form a plurality of optoelectronic modules 226, two of which are shown in Figure 2. It will be appreciated that in other embodiments, the intermediate module portion 224 may be singulated in more than two optoelectronic modules.
  • each optoelectronic module 226 may comprise one optoelectronic device 212.
  • the intermediate module portion 224 may be singulated so that each optoelectronic device 212 is laterally enclosed by the hardened curable material 222b. This may facilitate handling of the optoelectronic device 212, e.g. when mounting the optoelectronic device 212 on the circuit substrate. It will be appreciated that in other embodiments, each optoelectronic module may comprise more than one optoelectronic device.
  • Figure 3 shows another exemplary process flow of the method 300 of manufacturing the plurality of optoelectronic modules for mounting on the circuit substrate.
  • the process flow of the method 300 shown in Figure 3 is similar to the process flow of the method 200 shown in Figure 2. As such, only differences will be described below.
  • the optoelectronic module 628a comprise an optoelectronic device 612a.
  • the optoelectronic device 612a comprises an emitter, such as a vertical surface emitting laser (VCSEL).
  • the optoelectronic module 628a comprises an optical element 630a.
  • the optical element 630a is arranged on the optoelectronic device 612a, e.g. to direct and/or shape radiation emitted by the emitter.
  • the optoelectronic device 612a is laterally enclosed by the hardened curable material 622b. This arrangement of the hardened curable material 622b may facilitate handling of the optoelectronic device 612a, e.g.
  • the stack of the two elements comprises a first element 612c and a second element 612d.
  • the first element 612c comprises an emitter, such as a vertical surface emitting laser (VCSEL), and the second element 612d comprises a driver for controlling the emitter.
  • VCSEL vertical surface emitting laser
  • the first and/or second elements may comprise other optoelectronic or electronic devices.
  • the first element may comprise an emitter and the second element may comprise a detector.
  • the method comprises joining the first elements may to the second element.
  • the first elements may be joined to the second elements by bonding or soldering, e.g. reflow bonding or reflow soldering.
  • the method comprises singulating the second element into a plurality of portions such that the optoelectronic device comprises at least one first element arranged on and joined to a portion of the second element.
  • the second element may be singulated by using a dicing process, such as for example a wafer dicing process or a laser dicing process. Testing may be performed after the dicing process although, in some embodiments, testing may be performed at a wafer level (e.g. prior to dicing).
  • Figure 9 shows an exemplary optoelectronic module 928 mounted to a circuit substrate 938, such as for example a printed circuit board.
  • the optoelectronic module 928 has been manufactured using the process flows of described above in relation to Figures 4 and 5. Flowever, it will be appreciated that in other embodiments, the optoelectronic module may have been manufactured using a different method and/or process flow disclosed herein.
  • the optoelectronic module 928 may be integrated in an apparatus, such as at least one of: a cellular telephone, a camera, an image-recording device; and/or a video recording device.
  • the optoelectronic module 928 may be part of or comprised in a sensor or module of the apparatus, such as for example a proximity sensor, time of flight sensor, distance sensor, spectral sensor, an optical module, e.g. datacom module, or other sensor or module.
  • references to a plurality of features may be interchangeably used with references to singular forms of those features, such as for example “at least one” and/or “each”.
  • Singular forms of a feature, such as for example “at least one” or “each,” may be used interchangeably.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé (200) de fabrication d'une pluralité de modules optoélectroniques (228) destinés à être montés sur un substrat de circuit, le procédé comprenant l'agencement d'une pluralité de dispositifs optoélectroniques (212) entre un premier élément de support (216) et un second élément de support (218) de sorte que la pluralité de dispositifs optoélectroniques soient espacés les uns des autres, l'enveloppement latéralement de chaque dispositif optoélectronique avec un matériau durcissable (222a) pour former une partie de module intermédiaire (224), le retrait de la partie de module intermédiaire d'au moins l'un du premier élément de support et du second élément de support, et la séparation de la partie de module intermédiaire de manière à former une pluralité de modules optoélectroniques (228), chaque module optoélectronique comprenant au moins un dispositif optoélectronique (212).
PCT/SG2020/050788 2019-12-30 2020-12-29 Procédé de fabrication d'une pluralité de modules optoélectroniques Ceased WO2021137762A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962954898P 2019-12-30 2019-12-30
US62/954,898 2019-12-30

Publications (1)

Publication Number Publication Date
WO2021137762A1 true WO2021137762A1 (fr) 2021-07-08

Family

ID=74125659

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SG2020/050788 Ceased WO2021137762A1 (fr) 2019-12-30 2020-12-29 Procédé de fabrication d'une pluralité de modules optoélectroniques

Country Status (1)

Country Link
WO (1) WO2021137762A1 (fr)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040467A1 (fr) * 2009-09-30 2011-04-07 住友大阪セメント株式会社 Dispositif électroluminescent
US20140374786A1 (en) * 2012-02-10 2014-12-25 KONINKLIJKE PHILIPS N.V. a corporation Moulded lens forming a chip scale led package and method of manufacturing the same
US20160218239A1 (en) * 2013-09-10 2016-07-28 Heptagon Micro Optics Pte. Ltd. Compact opto-electronic modules and fabrication methods for such modules
US20170148966A1 (en) * 2014-06-13 2017-05-25 Osram Opto Semiconductors Gmbh Surface-Mountable Semiconductor Component and Method for Producing Same
US20180205857A1 (en) * 2015-07-09 2018-07-19 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules including overmold supporting an optical assembly
US20190067539A1 (en) * 2017-08-22 2019-02-28 Samsung Electronics Co., Ltd. Semiconductor light emitting element package including solder bump
EP3471152A1 (fr) * 2017-10-12 2019-04-17 ams AG Procédé de fabrication d'une pluralité de dispositifs de détection de durée de vol
WO2019172841A1 (fr) * 2018-03-07 2019-09-12 Ams Sensors Singapore Pte. Ltd. Modules optoélectroniques et procédés applicables au niveau tranche pour leurs fabrication

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040467A1 (fr) * 2009-09-30 2011-04-07 住友大阪セメント株式会社 Dispositif électroluminescent
US20140374786A1 (en) * 2012-02-10 2014-12-25 KONINKLIJKE PHILIPS N.V. a corporation Moulded lens forming a chip scale led package and method of manufacturing the same
US20160218239A1 (en) * 2013-09-10 2016-07-28 Heptagon Micro Optics Pte. Ltd. Compact opto-electronic modules and fabrication methods for such modules
US20170148966A1 (en) * 2014-06-13 2017-05-25 Osram Opto Semiconductors Gmbh Surface-Mountable Semiconductor Component and Method for Producing Same
US20180205857A1 (en) * 2015-07-09 2018-07-19 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules including overmold supporting an optical assembly
US20190067539A1 (en) * 2017-08-22 2019-02-28 Samsung Electronics Co., Ltd. Semiconductor light emitting element package including solder bump
EP3471152A1 (fr) * 2017-10-12 2019-04-17 ams AG Procédé de fabrication d'une pluralité de dispositifs de détection de durée de vol
WO2019172841A1 (fr) * 2018-03-07 2019-09-12 Ams Sensors Singapore Pte. Ltd. Modules optoélectroniques et procédés applicables au niveau tranche pour leurs fabrication

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