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WO2021112004A1 - Ａｇ合金スパッタリングターゲット - Google Patents

Ａｇ合金スパッタリングターゲット Download PDF

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Publication number
WO2021112004A1
WO2021112004A1 PCT/JP2020/044230 JP2020044230W WO2021112004A1 WO 2021112004 A1 WO2021112004 A1 WO 2021112004A1 JP 2020044230 W JP2020044230 W JP 2020044230W WO 2021112004 A1 WO2021112004 A1 WO 2021112004A1
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Prior art keywords
alloy
less
content
mass
sputtering target
Prior art date
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PCT/JP2020/044230
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English (en)
French (fr)
Japanese (ja)
Inventor
林　雄二郎
小見山　昌三
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Filing date
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Priority claimed from JP2020094203A external-priority patent/JP6908163B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to CN202080083116.XA priority Critical patent/CN114761609A/zh
Priority to KR1020227018332A priority patent/KR20220107192A/ko
Publication of WO2021112004A1 publication Critical patent/WO2021112004A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers

Definitions

  • the present invention relates to an Ag alloy sputtering target used when forming a thin film of an Ag alloy containing In, Ge, and S.
  • This application claims priority based on Japanese Patent Application No. 2019-218148 filed in Japan on December 2, 2019 and Japanese Patent Application No. 2020-094203 filed in Japan on May 29, 2020. And the contents are used here.
  • Ag films or Ag alloy films are excellent in optical and electrical characteristics, and are therefore used as reflective films and conductive films for various parts such as reflective electrode films such as displays and LEDs, and wiring films such as touch panels.
  • Patent Document 1 discloses that an Ag alloy is used as a constituent material of a reflective electrode of an organic EL element.
  • Patent Document 2 discloses that an Ag alloy containing S is used as a reflective electrode film such as a display or LED, an optical recording medium such as a wiring film such as a touch panel, or a reflective film provided on a display or the like.
  • the various Ag alloy films described above are formed by a sputtering target made of an Ag alloy.
  • an Ag alloy film made of an Ag alloy containing Ge and In is excellent in reflectance and heat resistance, and is particularly suitable for use as a reflective electrode film formed in contact with an organic layer in, for example, an organic EL element.
  • an organic layer in, for example, an organic EL element there is.
  • the Ag alloy sputtering target made of an Ag alloy containing Ge and In since the overall color tone is silvery white, the reaction with S contained in the atmospheric gas proceeds unevenly on the surface, resulting in a dark color system. When color unevenness due to sulfide occurs, it is very noticeable, and there is a problem that the commercial value is lowered.
  • the present invention has been made in view of the above-mentioned circumstances, and it is possible to suppress the occurrence of appearance defects due to color unevenness, and to form an Ag alloy film having excellent reflectance, sulfide resistance, and heat resistance. It is an object of the present invention to provide a suitable Ag alloy sputtering target.
  • the present invention has been made based on the above findings, and the Ag alloy sputter rig target according to one aspect of the present invention contains Ge, In, and S, and the balance is Ag and unavoidable impurities.
  • the content of S in the Ag alloy is 1 mass ppm or more and 150 mass ppm or less.
  • the Ag alloy sputtering target of the above aspect by using an Ag alloy containing Ge and In and further adding S in the range of 1 mass ppm or more and 150 mass ppm or less, the surface of the Ag alloy sputtering target is in the atmosphere. It is possible to suppress the non-uniform reaction with S of the above, and to suppress the occurrence of poor appearance due to color unevenness.
  • the Ag alloy contains In in the range of 0.1% by mass or more and 1.5% by mass or less, and Ge in the range of 0.1% by mass or more and 7.5% by mass. It may be included within the following range.
  • an Ag alloy film containing In in the range of 0.1% by mass or more and 1.5% by mass or less and Ge in the range of 0.1% by mass or more and 7.5% by mass or less can be formed. ..
  • An Ag alloy film having such a composition is particularly excellent in heat resistance, sulfurization resistance, and reflectance, and is particularly suitable for, for example, a reflective film application.
  • the Ag alloy may have a crystallite diameter of 220 ⁇ or less, which is determined based on Scherrer's equation.
  • the crystallite diameter of the Ag alloy is 220 ⁇ or less, the catalytic activity is increased and the reactivity is improved, the reaction with the atmospheric gas proceeds uniformly on the surface thereof, and color unevenness occurs. Can be suppressed. Therefore, it is possible to suppress the occurrence of poor appearance due to color unevenness.
  • the Ag alloy has a Pd content of 40 mass ppm or less, a Pt content of 20 mass ppm or less, an Au content of 20 mass ppm or less, and Rh. It is preferable that the content of Pd, Pt, Au and Rh is 50 mass ppm or less, and the total content of Pd, Pt, Au and Rh is 50 mass ppm or less. Since Pd, Pt, Au, and Rh, which may be contained in the Ag alloy, act as catalysts in the reduction reaction of nitric acid, when a large amount of these elements is contained, the formed Ag alloy film is etched with a nitric acid etching solution.
  • the etching rate of the film may increase. Therefore, when the Ag alloy contains Pd, Pt, Au, and Rh, the content of Pd, Pt, Au, and Rh is limited as described above to form a film using the Ag alloy sputtering target of the present invention.
  • the content of Pd, Pt, Au, and Rh can be limited even in the obtained Ag alloy film, and the etching rate can be kept low even if the etching process is performed using an etching solution containing nitric acid.
  • a film can be formed.
  • an Ag alloy film having excellent reflectance, sulfide resistance, and heat resistance which can suppress the occurrence of appearance defects due to color unevenness caused by the reaction with S contained in the atmosphere, can be obtained. It becomes possible to provide an Ag alloy sputtering target capable of forming a film.
  • the Ag alloy sputtering target according to the embodiment of the present invention will be described below.
  • the Ag alloy sputtering target of the present embodiment is used when forming an Ag alloy film.
  • an Ag alloy film formed by using the Ag alloy sputtering target of the present embodiment is provided, and the formed Ag alloy film is used, for example, as a reflective electrode film of an organic EL element. It is said that.
  • the Ag alloy sputtering target of the present embodiment may be a rectangular flat plate type sputtering target having a rectangular sputter surface, or a disc type sputtering target having a circular sputter surface. Alternatively, it may be a cylindrical sputtering target in which the sputtering surface is a cylindrical surface. In the present embodiment, a disk-shaped sputtering target having a circular sputtering surface is used.
  • the Ag alloy sputtering target of the present embodiment is composed of an Ag alloy having a composition containing Ge, In, and S, and the balance being Ag and unavoidable impurities.
  • the S content is in the range of 1 mass ppm or more and 150 mass ppm or less.
  • the Ag alloy may contain In in the range of 0.1% by mass or more and 1.5% by mass or less, and Ge in the range of 0.1% by mass or more and 7.5% by mass or less.
  • the Ag alloy may have a crystallite diameter of 220 ⁇ or less, which is determined based on Scherrer's equation.
  • the above-mentioned Ag alloy has a Pd content of 40 mass ppm or less, a Pt content of 20 mass ppm or less, an Au content of 20 mass ppm or less, and a Rh content of 10 mass ppm or less.
  • the total content of Pd, Pt, Au and Rh is 50 mass ppm or less.
  • the Ag alloy may contain one or more selected from Pd, Pt, Au and Rh, and in particular, one selected from Pd, Pt, Au and Rh, Pd and Pt.
  • the Ag alloy may contain 2 or more types, 2 or more types of Pd and Au, 2 or more types of Pd and Rh, 2 or more types of Pt and Au, 2 or more types of Pt and Rh, or 2 or more types of Au and Rh. .. Further, the Ag alloy may contain one kind or two or more kinds selected from Pd, Pt, Au and Rh as one kind of impurities, for example.
  • composition and the crystallite diameter are defined as described above in the Ag alloy sputtering target of the present embodiment.
  • In content is an element having an effect of improving the sulfurization resistance and heat resistance of the formed Ag alloy film.
  • In can be dissolved in Ag to suppress the growth of crystal grains.
  • the hardness is improved by the solid solution, and it becomes possible to suppress the occurrence of warpage.
  • the In content is preferably in the range of 0.1% by mass or more and 1.5% by mass or less.
  • the In content is more preferable to set to 0.25% by mass or more. , 0.5% by mass or more is more preferable.
  • the In content is more preferably 1.25% by mass or less, and 1.0 mass by mass. More preferably, it is% or less.
  • Ge is an element having an effect of improving the heat resistance of the formed Ag alloy film. Ge can be dissolved in Ag to suppress the growth of crystal grains. In addition, the hardness is improved by the solid solution, and it becomes possible to suppress the occurrence of warpage in the sputtering target.
  • the Ge content of Ge By setting the content of Ge to 0.1% by mass or more, the above-mentioned effects can be sufficiently obtained. On the other hand, by setting the Ge content to 7.5% by mass or less, it is possible to suppress a decrease in the reflectance of the formed Ag alloy film and an increase in electrical resistance. For this reason, in the present embodiment, the Ge content is preferably in the range of 0.1% by mass or more and 7.5% by mass or less.
  • the content of Ge is preferably 1.0% by mass or more, and more preferably 1.5% by mass or more.
  • the Ge content is preferably 6.25% by mass or less, preferably 5.0. It is more preferably mass% or less.
  • the content of Rh is 20 mass ppm or less, the content of Rh is 10 mass ppm or less, and the total content of Pd, Pt, Au and Rh is 50 mass ppm or less.
  • the total content thereof may be 0.1% by mass or more.
  • the Pd content is 30 mass ppm or less, the Pt content is 15 mass ppm or less, the Au content is 15 mass ppm or less, the Rh content is 7 mass ppm or less, and Pd, Pt, Au, and Rh. It is more preferable that the total content is 40 mass ppm or less.
  • the crystallite diameter of the Ag alloy is set to 220 ⁇ or less.
  • the crystallite diameter is preferably 215 ⁇ or less, and more preferably 210 ⁇ or less.
  • the lower limit of the crystallite diameter is not particularly limited, but is substantially 100 ⁇ or more.
  • ⁇ ⁇ / ⁇ cos ⁇ ⁇ ⁇ ⁇ (1)
  • K Scherrer (calculated as 0.9)
  • ⁇ X-ray wavelength
  • ⁇ Full width at half maximum of peak (FWHM, but in radians)
  • ⁇ Number of Braggs
  • ⁇ Crystallite diameter (average size of crystallites)
  • the outer peripheral portions (2), (3), (4), and (5) were set within a range of 15% or less of the diameter from the outer peripheral edge to the inner side.
  • the target sputtered surface has a circular shape, a measurement sample is taken from the position shown in FIG. 1, and the crystallite diameter is obtained, but the sputtering is not limited to this.
  • the surface may be rectangular, or it may be a cylindrical sputtering target having a cylindrical surface.
  • an intersection (1) where diagonal lines intersect and a corner portion (2), (3) on each diagonal line. ), (4), and (5) it is preferable to collect a measurement sample and determine the crystallite diameter.
  • the corners (2), (3), (4), and (5) shall be within a range of 15% or less of the diagonal total length from the corner to the inside.
  • the cylindrical sputtering target in which the target sputtering surface is a cylindrical surface as shown in FIG. 3, (1), (2), (3), (1), (2), (3), (1), (2), (3), ( It is preferable to collect a measurement sample from the four points in 4) and determine the crystallite diameter.
  • an Ag raw material having a purity of 99.99% by mass or more, an In raw material having a purity of 99.99% by mass or more, and a Ge raw material having a purity of 99.99% by mass or more are prepared.
  • electrolytic refining was carried out on Ag having a purity of 99.9% by mass or more to prepare an electrodeposited Ag, and the obtained electrodeposited Ag was cast again as an anode for electrolysis and reelectrolysis was carried out.
  • the contents of Pd, Pt, Au, and Rh in Ag were reduced.
  • component analysis was performed by ICP emission spectroscopic analysis every time electrolytic refining was performed.
  • the Pd content is 40 mass ppm or less
  • the Pt content is 20 mass ppm or less
  • the Au content is 20 mass ppm or less
  • the Rh content is 10 mass ppm or less
  • Pd, Pt, and Au It is possible to obtain an Ag raw material in which the total content of Rh and Rh is limited to 50 mass ppm or less.
  • a one-way solidification method can be used.
  • the molten metal is cast into a mold whose side surface is preheated by resistance heating while the bottom of the mold is water-cooled, and then the set temperature of the resistance heating part at the bottom of the mold is gradually lowered. It can be carried out by.
  • a method of casting treatment a method such as a complete continuous casting method or a semi-continuous casting method may be used instead of the one-way solidification method described above.
  • the ingot is hot forged to obtain a hot forged material.
  • the hot forging temperature is preferably in the range of 750 ° C. or higher and 850 ° C. or lower.
  • Cold rolling step S03 The above-mentioned hot forged material is cold-rolled to obtain a cold-rolled material.
  • the total reduction rate of cold rolling is preferably in the range of 60% or more and 70% or less.
  • the holding time at the holding temperature described above is preferably in the range of 1 hour or more and 2 hours or less.
  • the holding time at the holding temperature is more preferably 1.25 hours or more, and more preferably 1.5 hours or more.
  • the crystal grain diameter can be reduced by adding a slight strain to the crystal grains. Specifically, the crystallite diameter can be reduced to 220 ⁇ or less. It becomes possible to.
  • the total reduction ratio of cold rolling after heat treatment is more preferably 2% or more, and more preferably 3% or more. If the total reduction rate of cold rolling after heat treatment exceeds 5%, the strain becomes too large and causes abnormal discharge.
  • the Ag alloy sputtering target of the present embodiment is manufactured by the above steps.
  • the Ag alloy sputtering target of the present embodiment having the above-described configuration, the Ag alloy sputtering target is placed in the atmosphere by uniformly containing S of 1 mass ppm or more and 150 mass ppm or less in the Ag alloy in advance. It is possible to suppress the reaction with S contained in. As a result, even if the color tone of the Ag alloy contains Ge and In is silvery white, it is possible to prevent the occurrence of color unevenness due to the dark sulfide generated by non-uniform reaction with S, and the appearance is excellent and the commercial value is excellent. It is possible to realize a high-quality Ag alloy sputtering target.
  • the Ag alloy constituting the Ag alloy sputtering target has In in the range of 0.1% by mass or more and 1.5% by mass or less and Ge in the range of 0.1% by mass or more and 7.5% by mass or less.
  • the composition is contained within, it is possible to form an Ag alloy film which is excellent in heat resistance, sulfide resistance and reflectance and is particularly suitable for use as a reflective film.
  • the Ag alloy constituting the Ag alloy sputtering target has a crystallite diameter of 220 ⁇ or less obtained based on Scherrer's equation
  • the catalytic activity is increased and the reactivity is improved, and the surface thereof is improved.
  • the reaction with the atmospheric gas proceeds uniformly, and it becomes possible to suppress the occurrence of color unevenness. Therefore, it is possible to suppress the occurrence of poor appearance due to color unevenness.
  • the Ag alloy constituting the Ag alloy sputtering target has a Pd content of 40 mass ppm or less, a Pt content of 20 mass ppm or less, an Au content of 20 mass ppm or less, and a Rh content.
  • the etching rate is low even if the etching process is performed using an etching solution containing nitric acid. An Ag alloy film that can be suppressed can be formed.
  • An Ag raw material having a purity of 99.99% by mass or more is prepared, this Ag raw material is dissolved in a vacuum atmosphere, replaced with Ar gas, and then Ge and In having a purity of 99.99% by mass or more are added to form a predetermined composition.
  • the molten Ag alloy of the above was melted. Then, this molten Ag alloy was cast to produce an Ag alloy ingot.
  • the Ag raw material reduced the content of Pd, Pt, Au, Rh, if necessary, as described in the column of the embodiment of the invention.
  • the charged values of raw materials are shown in Table 1.
  • the obtained Ag alloy ingot was hot forged (temperature 800 ° C.) and then cold rolled (total rolling reduction 64%). Then, the heat treatment was carried out under the conditions shown in Table 1 (holding temperature / holding time). After that, 1-pass cold rolling was carried out under the conditions of the reduction rate shown in Table 1. Machining was carried out after cold rolling to produce a disk-shaped Ag alloy sputtering target having a diameter of 152.4 mm and a thickness of 18 mm, as shown in FIG.
  • RINT-UltimaIII X-ray source X-ray tube (anode: Cu) Tube voltage: 40kV Tube current: 40mA Scanning range (2 ⁇ ): 10 ° to 90 ° Slit size: divergence (DS) 2/3 degree, scattering (SS) 2/3 degree, light receiving (RS) 0.8 mm Measurement step width: 0.04 degrees at 2 ⁇ Scan speed; 4 degrees per minute Sample table rotation speed: 30 rpm
  • the crystallite diameter was calculated based on Scherrer's formula (1) described in the column of the above-described embodiment. Table 2 shows the average values of the five measurement samples. An example of the measured XRD pattern is shown in FIG.
  • the pattern (a) is Example 2 of the present invention, and the pattern (b) is Comparative Example 2.
  • an Ag alloy film was formed by sputtering under the condition of a DC 300 W power and an argon gas pressure of 0.3 Pa.
  • Comparative Example 1 containing no In, the reflectance of the formed Ag alloy film was significantly reduced after the sulfurization test.
  • Comparative Example 2 in which the S content was less than 1 mass ppm, color unevenness occurred. It is presumed that this is because the content of S added in advance is low, so that the gas reacts with the gas containing S contained in the atmosphere, and this reaction proceeds non-uniformly and locally discolors.
  • Comparative Example 3 in which the S content was more than 150 mass ppm, the initial reflectance and the reflectance after the sulfurization test were lowered. It is presumed that this is because the initial reflectance and the reflectance after the sulfurization test are lowered due to the high content of S, which is a factor that lowers the reflectance.
  • Comparative Example 4 containing no Ge, the reflectance of the formed Ag alloy film was significantly reduced after the heat treatment.
  • Comparative Example 4 in which the content of S was less than 1 mass ppm and the total content of Pd, Pt, Au and Rh was more than 50 mass ppm, color unevenness occurred. It is presumed that because the content of S added in advance was low, it reacted with the gas containing S contained in the atmosphere, and this reaction proceeded non-uniformly and locally discolored. In addition, the etching rate was as high as 1.9 ⁇ m.
  • Example 1-23 of the present invention containing In and Ge and further containing S in the range of 1 mass ppm or more and 150 mass ppm or less, color unevenness did not occur.
  • the Ag alloy constituting the Ag alloy sputtering target contains S evenly in advance, so that the Ag alloy sputtering target can suppress the reaction with S contained in the atmosphere to cause color unevenness. It is presumed that it was.
  • Example 12 of the present invention since the reduction ratio was set to be relatively small at 0.8%, the crystallite diameter was as large as 226 ⁇ , and as a result, color unevenness occurred in the range of 10% or more and less than 50% of the whole. It is considered to be.
  • the Ag alloy sputtering target of the present invention it is possible to suppress the occurrence of poor appearance due to color unevenness caused by the reaction with S contained in the atmosphere, and the Ag alloy has excellent reflectance, sulfide resistance, and heat resistance.
  • a film can be formed.
  • the Ag alloy film formed by using this Ag alloy sputtering target is suitable as, for example, a reflective electrode film for an organic EL element.

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PCT/JP2020/044230 2019-12-02 2020-11-27 Ａｇ合金スパッタリングターゲット Ceased WO2021112004A1 (ja)

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Application Number Priority Date Filing Date Title
CN202080083116.XA CN114761609A (zh) 2019-12-02 2020-11-27 Ag合金溅射靶
KR1020227018332A KR20220107192A (ko) 2019-12-02 2020-11-27 Ag 합금 스퍼터링 타깃

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Application Number Priority Date Filing Date Title
JP2019-218148 2019-12-02
JP2019218148 2019-12-02
JP2020-094203 2020-05-29
JP2020094203A JP6908163B2 (ja) 2019-12-02 2020-05-29 Ａｇ合金スパッタリングターゲット

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024177123A1 (ja) * 2023-02-22 2024-08-29 田中貴金属工業株式会社 スパッタリングターゲットおよびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007114439A1 (ja) * 2006-04-03 2007-10-11 National University Corporation The University Of Electro-Communications 超微細粒組織を有する材料およびその製造方法
WO2016136590A1 (ja) * 2015-02-27 2016-09-01 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット及びＡｇ合金膜の製造方法
JP2016194108A (ja) * 2015-03-31 2016-11-17 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
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