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WO2021109377A1 - Équipement d'application de revêtement permettant la préparation de dépôt cda et son utilisation - Google Patents

Équipement d'application de revêtement permettant la préparation de dépôt cda et son utilisation Download PDF

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Publication number
WO2021109377A1
WO2021109377A1 PCT/CN2020/082801 CN2020082801W WO2021109377A1 WO 2021109377 A1 WO2021109377 A1 WO 2021109377A1 CN 2020082801 W CN2020082801 W CN 2020082801W WO 2021109377 A1 WO2021109377 A1 WO 2021109377A1
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Prior art keywords
chamber
power supply
gas
coating
pipeline
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Ceased
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PCT/CN2020/082801
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English (en)
Chinese (zh)
Inventor
宗坚
张琳
代莹静
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Jiangsu Favored Nanotechnology Co Ltd
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Jiangsu Favored Nanotechnology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Definitions

  • the invention relates to the field of coating, and further relates to a coating equipment for preparing DLC and its application.
  • DLC films Diamond Like Carbon, DLC are integrated to form a recent rise in the form of sp2 and sp 3 bonds metastable material, a short-range order, long range disorder film or film layer. It combines the excellent properties of diamond and graphite.
  • DLC diamond Like Carbon
  • mechanical properties DLC has high hardness and wear resistance, and the hardness related to the components can vary from 20 GPa to 80 GPa; in terms of optical properties, DLC has good light transmittance and anti-reflection function; in addition, DLC also has good properties The thermal conductivity and biocompatibility.
  • coating a layer of DLC film on the surface of glass, ceramics, etc. can further improve the wear resistance and hardness of glass, ceramics, etc.
  • depositing DLC on the plastic surface can also improve the wear resistance and hardness of the plastic surface.
  • the current methods for preparing DLC films can be divided into chemical vapor deposition (CVD) methods and physical vapor deposition (PVD) methods.
  • Chemical vapor deposition is a deposition process that uses the principle of chemical reaction to separate solid phase substances from gas phase substances and deposit them on the working surface to form a coating film. From the perspective of deposition conditions, in order to achieve a chemical reaction between the gas and the substrate interface, there must be a certain amount of activation energy during the deposition reaction. According to the different activation methods, it can be divided into hot filament chemical vapor deposition, laser chemical vapor deposition and plasma enhanced chemical vapor deposition.
  • Physical vapor deposition technology refers to a vapor deposition process performed under vacuum conditions when at least one deposition element is atomized (atomized).
  • the interface can be improved, the deposition rate is high, etc.
  • the specific methods of physical vapor deposition of DLC films mainly include: ion beam deposition, sputtering deposition, vacuum cathodic arc deposition and pulsed laser deposition.
  • Plasma-enhanced chemical vapor deposition (PECVD) method has many characteristics such as low deposition temperature, good winding properties, and uniform and dense films prepared, it has become one of the most commonly used methods for preparing DLC films.
  • Plasma-enhanced chemical vapor deposition is also called glow discharge method.
  • Common plasma-enhanced chemical vapor deposition techniques include: direct current glow discharge method, radio frequency glow discharge method, electron cyclotron resonance (ECR) chemical vapor deposition, etc., in recent years
  • RF-DC radio frequency-direct current glow discharge
  • MW-RF microwave-radio frequency
  • ECR-RF electron cyclotron resonance-radio frequency
  • the preparation process of diamond-like carbon films can be divided into the following four stages: (1) The generation process of the original matrix group, that is, the gas source molecule decomposes into neutral atoms and groups through inelastic collision with high-energy electrons. ; (2) Secondary reaction process, that is, the chemical reaction process between neutral atoms and groups or between neutral atoms and gas molecules; (3) Transmission process, that is, neutral atoms or groups to the surface of the substrate The diffusion process; (4) The surface reaction process, that is, the neutral group reacts with the surface to form a film.
  • the patent number is CN205803582U discloses a device for depositing diamond-like carbon films, which includes a vacuum chamber, a workbench and a vacuum system.
  • the vacuum system is first used to pump the vacuum chamber to working vacuum, the heating system is turned on, and the columnar arc source cleaning device is turned on Clean the workbench. After cleaning, open the rectangular planar arc chromium target to lay the bottom layer, and then open the rectangular planar arc graphite target to deposit the diamond-like carbon film.
  • the graphite target is used as the target material, the ionization rate is low, the deposition efficiency is slow, and there are problems of poor coating quality and high economic cost.
  • the patent number CN101082118A discloses a method for coating a diamond-like carbon film on a high-speed steel metal surface.
  • the method includes a, fixing a metal workpiece on a workpiece turntable in a vacuum chamber of an arc ion plating equipment and vacuuming; b. venting argon Enter the vacuum chamber and keep the vacuum stable, then turn on the ion source to activate the surface of the metal workpiece; c. Turn off the argon gas, load a negative bias between the metal workpiece and the vacuum chamber, and turn on the titanium arc source to deposit the surface of the metal workpiece Titanium transition layer; d.
  • An advantage of the present invention is to provide a coating device for preparing DLC and its application, wherein the coating device is used to coat a DLC film or film on the surface of a substrate to realize large-area coating, thereby realizing mass preparation of DLC film .
  • Another advantage of the present invention is to provide a coating device for preparing DLC and its application, wherein the coating device can etch and activate the surface of the substrate, which is beneficial for preparing the DLC film on the surface of the substrate.
  • Another advantage of the present invention is to provide a coating equipment for preparing DLC and its application, wherein the coating equipment can complete the coating at room temperature or low temperature, and the required time is short, which is beneficial to cost saving.
  • Another advantage of the present invention is to provide a coating equipment for preparing DLC and its application, wherein the coating equipment can be used to coat some substrates that are not resistant to high temperatures, so that the substrate is not easily damaged during the coating process.
  • Another advantage of the present invention is to provide a coating device for preparing DLC and its application, wherein the coating device can detect the reaction temperature in real time to further ensure the safety of the substrate.
  • Another advantage of the present invention is to provide a coating device for preparing DLC and its application, wherein the coating device combines radio frequency and/or pulse voltage to prepare the DLC film.
  • Another advantage of the present invention is to provide a coating device for preparing DLC and its application, wherein the coating device has better process controllability in the process of preparing DLC film, which is beneficial to the rapid preparation of target DLC film.
  • Another advantage of the present invention is to provide a coating equipment for preparing DLC and its application, wherein the coating equipment has a simple structure, is conducive to cleaning, and has a long service life.
  • the present invention further provides a coating equipment for preparing a DLC film on the surface of a substrate, wherein the coating equipment includes:
  • a cavity wherein the cavity has a cavity
  • a set of conveying pipelines A set of conveying pipelines
  • At least one air extraction device At least one air extraction device
  • At least one suction line At least one suction line
  • a power supply device and
  • At least one electrode holder wherein the electrode holder is arranged in the chamber for supporting the substrate, and the delivery pipeline is connected to the chamber and is used to pass gaseous materials into the chamber, wherein
  • the air extraction device is connected to the chamber through the air extraction pipeline and performs a negative pressure operation on the chamber and controls the air pressure in the chamber, wherein the power supply device is electrically connected to the electrode holder to
  • the coating equipment is provided for preparing the DLC film on the surface of the substrate by means of chemical vapor deposition.
  • the cavity has at least one suction port, at least one gas inlet, and at least one feed port communicating with the cavity
  • the delivery pipeline includes at least one gas source pipe, and at least A reaction raw material pipeline
  • the gas extraction port is connected to the gas extraction pipeline
  • the gas source pipeline is connected to the gas inlet for injecting gas into the chamber
  • the reaction raw material A pipe is connected to the feed port for filling the chamber with reaction raw materials.
  • it further comprises a hydrogen pipeline, wherein the hydrogen pipeline and the reaction raw material pipeline are connected to the same feed port, or the hydrogen pipeline and the reaction raw material pipeline are respectively connected to two The feed port.
  • the delivery pipeline further includes a doping raw material pipeline, wherein the doping raw material pipeline is connected to the feed port for filling the chamber with doping element reaction raw materials.
  • the suction port is located in the middle of the chamber, and the gas inlet and the feed port are both located on the side wall of the chamber.
  • the pumping device includes at least one first vacuum pump and at least one second vacuum pump, wherein the second vacuum pump serves as a backing pump of the first vacuum pump and passes through the pumping pipeline in cooperation.
  • a negative pressure operation is performed on the chamber and the air pressure in the chamber is maintained within a preset range.
  • the air in the chamber reduces the air pressure in the chamber to below 0.01 Pa.
  • the air pressure in the chamber is maintained between 0.01 and 100 Pa.
  • the first vacuum pump is implemented as a molecular pump
  • the second vacuum pump is implemented as including a roots pump and a dry pump.
  • the coating equipment further includes an exhaust gas treatment device, wherein the exhaust gas treatment device is connected to the gas extraction pipeline for processing and discharging the gas extracted by the gas extraction device.
  • the power supply device includes a radio frequency power supply and a pulse power supply to provide the radio frequency voltage and the pulse power supply respectively.
  • the power supply device includes a pulse power source, wherein the pulse power source has a positive terminal and a negative terminal, wherein the negative terminal is electrically connected to the electrode holder and provides a negative voltage, wherein the The cavity is grounded, and the electrode holder is insulated from the cavity.
  • the power supply device includes a pulse power supply, wherein the pulse power supply has a positive terminal and a negative terminal, wherein the electrode holder includes a multilayer metal plate, and the positive terminal of the pulse power supply The negative terminal and the negative terminal are respectively electrically connected to the metal plates of the electrode support, and the two adjacent metal plates of the electrode support are mutually positive and negative.
  • the power of the radio frequency voltage of the radio frequency power supply is 10-800W.
  • the pulse power supply provides a pulse bias voltage of -100V to -5000V, a pulse frequency of 20-300KHz, and a duty cycle of 10%-80%.
  • the pulsed power supply is implemented as a unidirectional pulsed power supply, a symmetrical bidirectional pulsed power supply, or an asymmetrical pulsed power supply.
  • the coating equipment further includes a housing, wherein the cavity, the delivery pipeline, the air extraction device, the air extraction pipeline, and the power supply device are all installed in the housing .
  • the present invention also provides a method for coating a DLC thin film, which uses a coating device to prepare the DLC thin film on the surface of a substrate based on hydrocarbon gas as a reaction raw material, including the steps:
  • the step (c) further includes the step of: (c.1) passing gas into the chamber through a gas source pipe, and providing a voltage to act on the gas in the chamber to Performing an etching treatment on the surface of the substrate; and (c.2) passing a reaction raw material gas into the chamber through at least one reaction raw material pipe, and providing a voltage to act on the gas in the chamber so that the substrate The DLC film is prepared on the surface of the material.
  • the gas flow rate of the gas passing into the chamber is 10 sccm to 1000 sccm.
  • the electrode holder is connected to a pulse power source to provide a pulse voltage to act on the gas in the chamber.
  • a negative terminal of the pulse power supply is electrically connected to the electrode holder, the cavity is grounded, and the electrode holder is insulated from the cavity.
  • a positive terminal and a negative terminal of the pulse power supply are respectively electrically connected to the multilayer metal plate of the electrode holder, and two adjacent metal plates of the electrode holder are mutually positive. negative electrode.
  • the electrode holder is connected to a pulse power supply and a radio frequency power supply to provide pulse voltage and radio frequency voltage to act on the gas in the chamber.
  • a second vacuum pump is used as a backing pump of a first vacuum pump to vacuum the chamber in a cooperative manner, wherein the second vacuum pump is implemented to include a dry pump and a roots pump , Wherein the first vacuum pump is implemented as a molecular pump.
  • Fig. 1 is a perspective schematic view of a coating equipment according to a preferred embodiment of the present invention.
  • Fig. 2 is a three-dimensional schematic diagram of the coating equipment according to the above-mentioned preferred embodiment of the present invention from another perspective.
  • Fig. 3 is a perspective schematic view of a second vacuum pump of the air pumping device of the coating equipment according to the above-mentioned preferred embodiment of the present invention.
  • Fig. 4 is a perspective schematic view of the first vacuum pump of the air pumping device of the coating equipment according to the above-mentioned preferred embodiment of the present invention.
  • Fig. 5 is a perspective schematic view of the box body of the coating equipment according to the above-mentioned preferred embodiment of the present invention.
  • Fig. 6 is a structural block diagram of the coating equipment according to the above-mentioned preferred embodiment of the present invention.
  • Fig. 7 is a structural block diagram of the conveying pipeline of the coating equipment according to the above-mentioned preferred embodiment of the present invention.
  • Fig. 8 is a structural block diagram of the air conveying pipeline of the coating equipment according to the above-mentioned preferred embodiment of the present invention.
  • Fig. 9 is a structural block diagram of the power supply device of the coating equipment according to the above-mentioned preferred embodiment of the present invention.
  • Fig. 10 is a perspective schematic view of the support of the coating equipment according to the above-mentioned preferred embodiment of the present invention.
  • the term “a” should be understood as “at least one” or “one or more”, that is, in one embodiment, the number of an element may be one, and in another embodiment, the number of the element The number can be multiple, and the term “one” cannot be understood as a restriction on the number.
  • Figures 1 to 10 show a coating device 100 according to a preferred embodiment of the present invention, wherein the coating device 100 is used for coating at least one layer of DLC film or layer on the surface of at least one substrate 600, wherein The coating equipment 100 can realize large-area coating, so as to realize the simultaneous coating of the DLC film on the surface of the substrate 600 in large quantities.
  • the coating device 100 adopts a plasma chemical vapor deposition method to prepare the DLC film or film layer on the surface of the substrate 600. That is, the DLC film is deposited on the surface of the substrate 600, thereby improving the mechanical, optical, or chemical properties of the surface of the substrate 600, wherein the substrate 600 has a predetermined shape and structure.
  • Products that need to be coated such as PCB circuit boards, mobile phones, electronic equipment, electronic product covers, electronic product display screens, mobile phone glass screens, computer screens, mobile phone back covers, electronic device shells, keyboard films or other types of products that need to be coated, etc.
  • the coating equipment 100 prepares the DLC film on the display screen of an electronic product, which can effectively solve the problems of the display screen of the electronic product that the display screen is not resistant to fall, wear resistance, and the surface strengthening cost is high.
  • the coating equipment 100 includes a cavity 10, a set of conveying pipelines 20, at least one air extraction device 30, at least one air extraction pipeline 40, A power supply device 50 and at least one electrode holder 60, wherein the cavity 10 has a closable cavity 101, wherein the electrode holder 60 is disposed in the cavity 101 of the cavity 10, wherein the The electrode holder 60 is used to support the substrate 600, wherein the delivery pipe 20 is connected to the chamber 101 of the cavity 10, and the delivery pipe 20 is used to feed the cavity 101 Gas raw materials such as plasma source gases such as nitrogen, carbon tetrafluoride or inert gases such as helium and argon, reactive gases such as hydrogen, hydrocarbon gas, or doped N, Si, F, B, etc.
  • plasma source gases such as nitrogen, carbon tetrafluoride or inert gases such as helium and argon
  • reactive gases such as hydrogen, hydrocarbon gas, or doped N, Si, F, B, etc.
  • the air extraction device 30 communicates with the chamber 101 of the cavity 10 through the air extraction line 40 and continuously extracts the gas in the chamber 101 through the air extraction line 40 to control the cavity
  • the DLC film or film layer is prepared on the surface of 600.
  • the cavity 10 has at least one suction port 11, at least one gas inlet 12, and at least one feed port 13 communicating with the cavity 101, wherein the conveying pipe 20 It includes at least one gas source pipeline 21, at least one hydrogen pipeline 22, and at least one reaction raw material pipeline 23, wherein the gas extraction port 11 is connected to the gas extraction pipeline 40 for the gas extraction device 30 to pass through the gas extraction pipeline 40 Extract the gas in the chamber 101, wherein the gas inlet 12 is connected to the gas source pipe 21 for introducing nitrogen, carbon tetrafluoride or helium or argon into the chamber 101 Inert gas or plasma source gas, etc., wherein the feed port 13 is connected to the hydrogen pipeline 22 and the reaction raw material pipeline 23, wherein the hydrogen pipeline 22 is used to pass into the chamber 101 Hydrogen, wherein the reaction raw material pipeline 23 is used to pass the reaction raw materials such as hydrocarbon gas into the chamber 101, such as gaseous raw materials such as alkanes, alkenes, and alkynes with 1-6 carbon atoms.
  • the reaction raw material pipeline 23 is
  • reaction raw material pipeline 23 can be used to transport liquid reaction raw materials, and then the vaporized reaction raw materials are passed into the chamber 101 through the feed port 13.
  • the cavity door of the cavity 10 may be provided with a window for the user to observe the coating condition in the cavity 101.
  • the air inlet 12 and the feed inlet 13 are both provided on the side wall of the cavity 10, wherein the air inlet 12 and the air source pipe 21 are connected in a closed connection, wherein the feed inlet 13 are respectively closed and connected with the hydrogen pipeline 22 and the reaction raw material pipeline 23, such as flange connections such as screw threads, sockets, and buckles.
  • the feed ports 13 are implemented as two, one of the feed ports 13 is used to connect to the hydrogen pipeline 22 for the independent hydrogen gas flow into the chamber 101, and the other The feed port 13 is used to connect to the reaction raw material pipeline 23 for separately passing the reaction raw materials into the chamber 101.
  • the feed port 13 can also be implemented as one, wherein the hydrogen pipe 22 and the reaction raw material pipe 23 are connected to the same feed port 13 together, so as to pass through the same feed port 13 respectively.
  • the feed port 13 passes hydrogen or reaction raw materials into the chamber 101.
  • the delivery pipeline 20 further includes a doping raw material pipeline 24, wherein the doping raw material pipeline 24 is connected to the feed port 13 for filling the chamber 101 with N and Si. , F, B and other auxiliary gases doped with elements.
  • the reaction raw material for the doped Si element includes, but is not limited to, silicon-containing organic compounds, including one of organic linear siloxanes, cyclosiloxanes, alkoxysilanes, and unsaturated carbon-carbon double bond-containing siloxanes. kind or multiple combinations.
  • the reaction raw materials of the doped N element include, but are not limited to, N 2 and nitrogen-containing hydrocarbons.
  • the raw materials for the doped F element include but are not limited to fluorocarbon compounds, and are further selected from carbon tetrafluoride and tetrafluoroethylene.
  • the reaction raw material for the doped element B includes but is not limited to borane with a boiling point lower than 300° C. under normal pressure, and further, pentaborane, hexaborane, etc. are selected.
  • the gas source pipeline 21, the hydrogen pipeline 22, the reaction raw material pipeline 23, and the doping raw material pipeline 24 can each be provided with an on-off valve to respectively control the opening and closing of the pipelines to realize gas Circulation and closure, or that the on-off valve can control the flow rate of the gas filled into the chamber 101, is not limited here.
  • the doping raw material pipeline 24 may be connected to an additional independent feed port 13 to separately charge the auxiliary gas of the doping element into the chamber 101.
  • the doping material pipe 24 may share the same feed port 13 with the hydrogen pipe 22 or the reaction material pipe 23 to fill the chamber 101 with gas or the like respectively.
  • the content of doping elements in the DLC film is preferably less than 10% of the atomic number.
  • the DLC film prepared by the coating equipment 100 is doped
  • the content of miscellaneous elements is less than 40%, and the thickness of the DLC film is preferably 10-800 nm.
  • the doping content of Si, Cu, N, F, Al and other elements should not be too much. These doping elements will form a bond with the carbon element in the DLC, which will damage the original DLC.
  • the structure changes the growth mode during the deposition process.
  • the doping element reaction gas source can also increase the ionization rate of the carbon-containing gas source, which is beneficial to realize the coating.
  • the suction port 11 is provided in the middle of the chamber 101 of the cavity 10, wherein the gas inlet 12 and the feed port 13 are both provided in the cavity.
  • the position of the side wall of the chamber 101 of the body 10 so that gas is filled from the gas inlet 12 and the feed port 13 of the side wall of the chamber 101, and from the chamber 101
  • the suction port 11 in the middle of the position is drawn out to ensure that the filled gas diffuses to the surface of each substrate 600 as evenly as possible, so that the surface of each substrate 600 is evenly plated as much as possible
  • the above DLC film is provided in the middle of the chamber 101 of the cavity 10.
  • the suction port 11 may be provided in the middle of the bottom or top wall of the chamber 101, and the suction port 11 may also be connected to a suction port provided in the middle of the chamber 101.
  • the air column, wherein the air inlet 12 and the feed inlet 13 may be located on the same side wall of the chamber 101, or may be located on different side walls of the chamber 101, respectively.
  • the suction port 11 may be provided at a side wall position of the chamber 101, and the air intake port 12 and the feed port 13 may be provided at the middle position of the chamber 101 or at the same position as the side wall of the chamber 101.
  • the position of the side wall opposite to the suction port 11 is not limited here.
  • the relative positions of the suction port 11, the gas inlet 12, and the feed port 13 in the chamber 101 can be preset according to actual needs, so as to meet the needs of mass production as much as possible.
  • the substrate needs to be uniformly coated to ensure uniformity of specifications.
  • the pumping device 30 includes at least one first vacuum pump 31 and at least one second vacuum pump 32, wherein the first vacuum pump 31 and the second vacuum pump 32 respectively pass through
  • the air extraction line 40 is connected to the air extraction port 11, wherein the second vacuum pump 32 serves as the backing pump of the first vacuum pump 31 and cooperates to perform negative pressure on the chamber 101 through the air extraction line 40.
  • the pressure operation is to draw a vacuum and maintain the air pressure in the chamber 101 within a preset range.
  • the chamber 101 is pumped with gas to be close to a vacuum state.
  • the air pressure in the chamber 101 is reduced to below 0.01 Pa, or even below 0.001 Pa.
  • the air extraction device 30 is used to continuously extract the gas in the chamber 101 through the air extraction pipe 40 so as to maintain the concentration of the gas in the chamber 101 within a certain range, Preferably, the air pressure in the chamber 101 is maintained between 0.01 and 100 Pa.
  • the staff Before the coating of the coating equipment 100, the staff opens the chamber 101 of the cavity 10, wherein the substrate 600 is placed on the electrode holder 60, and the electrode holder 60 is located in the cavity. Then, the worker seals and closes the chamber 101 of the cavity 10, and then turns on the coating equipment 100 for coating.
  • this embodiment also provides a coating method of the coating equipment 100, which includes the steps:
  • S02. Enter the stage of performing surface etching treatment or surface cleaning and activation on the surface of the substrate 600.
  • gas raw materials are continuously filled into the chamber 101 through the gas source pipeline 21 for the substrate 600
  • the surface of the material is etched.
  • argon or helium is introduced into the chamber 101 through the gas source pipe 21, wherein the flow rate is approximately 10 sccm to 1000 sccm, preferably 80 or 100 sccm.
  • the air extraction device 30 is used to continuously extract a certain amount of gas in the chamber 101 and maintain the air pressure in the chamber 101 within 0.01-100 Pa, preferably 8 Pa or 10 Pa or 100 Pa.
  • the power supply device 50 provides a pulse voltage to act on the gas in the chamber 101 to clean and activate the surface of the substrate 600, so as to achieve etching treatment on the surface of the substrate 600.
  • the power supply device 50 provides a high voltage pulse bias voltage of -100V to -5000V, a duty ratio of 1% to 90%, and a power supply time of 1-60 minutes (the power supply time is the time for the substrate in step S02 600 surface cleaning and activation time), preferably, the power supply device 50 provides a voltage of -3000V, a duty cycle of 20% or 30%, a frequency of 10kHz or 40kHz, and a power supply time of 5, 10, 20, or 30min and so on.
  • the gas source pipe 21 is closed to stop filling the chamber 101 with gas.
  • the gas source pipe 21 has the on-off valve, wherein The on-off valve is used to control the switching of the gas source pipeline 21 to realize opening or closing of the gas source pipeline 21.
  • step S02 continue to pass gas into the chamber 101 through the gas source pipe 21 for preparation on the surface of the substrate 600 by means of plasma chemical vapor deposition.
  • the DLC film optionally, the flow rate of the gas to be ionized that is passed into the chamber 101 can be changed adaptively.
  • the flow rate of the gas to be ionized filled into the chamber 101 through the gas source pipe 21 can be preset at Within a reasonable range, to prevent the phenomenon that the flow rate of the gas to be ionized filled into the chamber 101 is too high or too low, which will affect the surface ionization effect of the substrate 600.
  • the pulse voltage provided by the power supply device 50 is preset within a reasonable range to prevent the voltage from being too low to achieve a good cleaning and activating effect on the surface of the substrate 600, or the voltage is too high to damage the The risk of the substrate 600.
  • the power supply time of the power supply device 50 can be preset within a reasonable range to prevent that the power supply time is too short to achieve a good cleaning and activation effect on the surface of the substrate 600, or the power supply time is too long to prolong the entire coating The cycle of the process causes unnecessary waste.
  • the flow rate of the gas to be ionized filled into the chamber 101 is 10-200 sccm
  • the gas flow rate of hydrogen is 0-100 sccm
  • the gas flow rate of the reaction raw materials such as hydrocarbon gas is 50-1000 sccm or doped.
  • the gas flow rate of the elemental reaction raw materials is 0-100 sccm.
  • the air extraction device 30 is used to continuously extract a certain amount of gas in the chamber 101 and maintain the air pressure in the chamber 101 within 0.01-100 Pa, preferably 8 Pa or 10 Pa or 100 Pa.
  • the DLC film is prepared on the surface of the substrate 600 by the power supply device 50 providing radio frequency voltage and/or high-voltage pulse bias assisted plasma chemical vapor deposition, wherein the power supply device 50 provides radio frequency voltage
  • the power is 10-800W, or the pulse bias voltage is -100V to -5000V, the duty cycle is 10%-80%, and the power supply time of the power supply device 50 is 5-300 minutes, that is, in step S03
  • the time for coating the substrate 600 is approximately 5-300 minutes.
  • the voltage or power of the power supply device 50 can be preset. Under the action of the voltage provided by the power supply device 50, all the gas in the chamber 101 is basically Both can be ionized into plasma, so that a plasma environment is formed in the chamber 101, so that the coating device 100 can prepare the thin film on the surface of the substrate 600 by means of chemical vapor deposition.
  • the power supply device 50 can provide radio frequency and/or high voltage pulse bias to act on the gas in the chamber 101, wherein the power supply device 50 provides a radio frequency electric field to the cavity 101.
  • the gas to be ionized in the chamber 101 and the reaction material gas and other gases are discharged so that the chamber 101 is in a plasma environment and the reaction gas material is in a high-energy state.
  • the power supply device 50 generates a strong electric field in the chamber 101 by providing a strong voltage in a high-voltage pulse bias, so that the active particles in a high-energy state are accelerated by the strong electric field to deposit on the surface of the substrate 600, And form an amorphous carbon network structure.
  • the power supply device 50 provides the empty voltage or the low voltage state in the high-voltage pulse bias to allow the amorphous carbon network structure deposited on the surface of the substrate 600 to relax freely, and the carbon under the action of thermodynamics The structure is transformed into a stable phase-curved graphene sheet structure, and is embedded in an amorphous carbon network, thereby forming the DLC film on the surface of the substrate 600.
  • the gas source pipe 21 can be closed to stop filling the chamber 101 with the gas to be ionized, or filling the chamber 101
  • the gas flow rate can be preset within a reasonable range.
  • the hydrogen pipe 22 can be closed to prevent or stop filling the chamber 101 with hydrogen, or the gas flow rate of the hydrogen filled into the chamber 101 through the hydrogen pipe 22 can be preset. Set within a reasonable range.
  • the reaction raw material pipeline 23 can be controlled to switch, wherein the gas flow rate of the reaction raw materials filled into the chamber 101 through the reaction raw material pipeline 23 can be preset within a reasonable range.
  • the doping material pipe 24 can be closed to prevent or stop filling the chamber 101 with the doping element reaction material, or to be filled into the chamber through the doping material pipe 24
  • the gas flow rate of the doping element reaction raw material in 101 can be preset within a reasonable range.
  • the gas to be ionized such as nitrogen or argon, the hydrogen, the reaction raw material gas, or the doping element reaction raw material gas, which is charged into the chamber 101, determines the ratio of the flow rate of the gas flow.
  • the atomic ratio in the DLC film is affected, thereby affecting the quality of the DLC film.
  • the temperature, ionization rate, or deposition rate and other related parameters during the coating process can be adjusted, or through preset
  • the power supply time of the power supply device 50 is set to prevent the DLC film from being thinner and the hardness performance poor due to the coating time being too short, or the DLC film being thicker due to the coating time being too long, which affects transparency, etc. The occurrence of the phenomenon.
  • step S03 it is possible not to fill the chamber 101 with hydrogen at different flow rates, or to fill the chamber 101 with a certain amount of hydrogen to prepare DLC with different hydrogen content. film.
  • the DLC film with higher hydrogen content has higher lubricity and transparency than the DLC film with lower hydrogen content, and in the step S03, a certain amount is filled into the chamber 101 A large amount of hydrogen is conducive to the formation of SP 3 bonds during the coating process, which can increase the hardness of the DLC film to a certain extent, but as the hydrogen content further increases, the hardness of the DLC film will gradually decrease, so according to For different coating requirements, in the step S03, the chamber 101 can be selectively filled with a preset amount of hydrogen gas through the hydrogen pipe 22.
  • a certain amount of designated doping element reaction raw materials can be selectively filled into the chamber 101 through the doping raw material pipeline 24.
  • the reaction material containing fluorine is filled into the chamber, so that the prepared DLC film has a higher hydrophobic effect and transparency, but when the fluorine atom content exceeds 20%, the hardness of the DLC film Will be significantly reduced (less than 4H on the Mohs hardness).
  • step S04 After the coating time of step S03 ends, the on-off valves of the gas source pipeline 21, the hydrogen pipeline 22, the reaction raw material pipeline 23, and the doping raw material pipeline 24 of the delivery pipeline 20 Both are turned off, at the same time the power supply device 50 is turned off, and the air extraction device 30 is turned off.
  • the delivery pipeline 20 further includes an air delivery pipeline 25, wherein the cavity 10 further has at least one air inlet 14 communicating with the chamber 101, wherein the air delivery pipeline 25 is connected to the air inlet 14 of the chamber 101, wherein the air delivery pipe 25 is used to fill the chamber 101 with air so that the chamber 101 is in a normal pressure state. That is, a certain amount of air is filled into the chamber 101 through the air delivery pipe 25 to return the chamber 101 to a normal pressure state, so that the staff can open the chamber 101 and take out the substrate 600, So far, the coating process is over. In the entire coating process, the coating equipment 100 has better process controllability in the process of preparing the DLC film, which is beneficial to the rapid preparation of the target DLC film.
  • the chamber 101 can always be at room temperature or low temperature, that is, the coating equipment 100 can complete the coating at room temperature or low temperature, and the time required is relatively short, which is conducive to saving cost.
  • the coating equipment 100 can be used to coat some substrates that are not resistant to high temperatures, so that the substrates are not easily damaged during the coating process.
  • the coating equipment 100 of the present invention can always keep the substrate 600 in a relatively low temperature state during the entire coating process. The temperature of the substrate 600 is excessively increased.
  • the coating equipment 100 further includes an exhaust gas treatment device 70, wherein the exhaust gas treatment device 70 is connected to the exhaust pipe 40, and the exhaust gas treatment device 70 is used to process the exhaust gas The exhaust gas is extracted and discharged.
  • the exhaust gas treatment device 70 includes, but is not limited to, recycling or non-polluting treatment of reaction raw materials such as nitrogen, inert gas, hydrogen, hydrocarbon gas, or auxiliary gas doped with elements, etc., and then It is discharged to the outside world to prevent pollution to the environment and can be recycled.
  • the first vacuum pump 31 is implemented as a molecular pump, wherein the second vacuum pump 32 includes a roots pump 321 and a dry pump 322, wherein the pumping of the chamber 101
  • the air port 11, the first vacuum pump 31, the roots pump 321, the dry pump 322, and the exhaust gas treatment device 70 are all connected by the air extraction pipeline 40.
  • the gas in the chamber 101 is sequentially pumped out by the dry pump 322, the Roots pump 321, and the molecular pump, that is, the second vacuum pump 32 acts as a fore-stage pump to the chamber 101 first.
  • Evacuate wherein the first vacuum pump 31 serves as a secondary pump to further evacuate the chamber 101, and the gas extracted from the chamber 101 is processed or recovered by the exhaust gas processing device 70 Discharge to the outside world.
  • the second vacuum pump 32 includes at least one mechanical pump and serves as a backing pump for pumping air to the chamber 101, wherein the molecular pump serves as a two-stage pump set to further the chamber.
  • the ground is evacuated so that the air pressure in the chamber 101 can be maintained as low as possible.
  • the model parameter of the pipeline between the chamber 101 and the roots pump 321 is DN100, and the interface is IOS100.
  • the model parameter of the pipe between the Roots pump 321 and the dry pump 322 is DN63, and the interface is not limited.
  • the model parameter of the pipeline of the exhaust gas treatment device 70 is NB32, and the interface is not limited.
  • the power supply device 50 includes a radio frequency power supply 51 and a pulse power supply 52, wherein the radio frequency power supply 51 is directly loaded on the electrode plate in the chamber 101 of the cavity 10 A radio frequency electric field is generated inside to act on the gas in the chamber 101, wherein the pulse power source 52 is used to provide a high-voltage pulse bias to act on the gas in the chamber 101.
  • the radio frequency power supply 51 discharges the gas in the chamber 101, such as nitrogen or inert gas, and the reaction raw material gas, by providing a radio frequency electric field, so that the chamber 101 is in plasma.
  • the body environment and the reaction gas raw materials are in a high-energy state.
  • the pulse power supply 52 generates a strong electric field in the chamber 101 by providing a strong voltage in a high-voltage pulse bias, so that the active particles (that is, positive ions) in a high-energy state are subjected to the strong electric field to directionally accelerate the deposition on the chamber 101.
  • an amorphous carbon network structure is formed, and the pulse power source 52 provides a null voltage or a low voltage state in the high-voltage pulse bias to make the deposited on the surface of the substrate 600
  • the amorphous carbon network structure relaxes freely, and under the action of thermodynamics, the carbon structure transforms into a stable phase-the curved graphene sheet structure, and is embedded in the amorphous carbon network, so as to be on the surface of the substrate 600
  • the DLC film is formed.
  • the radio frequency power supply 51 can also be used as a plasma supporting power supply, wherein the radio frequency power supply 51 is composed of a radio frequency power source, an impedance matcher and an impedance power meter, and the radio frequency power supply 51 is installed in the cavity 10 to provide The radio frequency electric field acts on the gas in the chamber 101.
  • the radio frequency power supply 51 preferably provides radio frequency power of 13.56 MHz.
  • the radio frequency power supply 51 forms the radio frequency electric field in the cavity 101 of the cavity 10 by directly loading the radio frequency voltage on an electrode plate of the cavity 10 to act The gas in the chamber 101 satisfies the coating demand.
  • the radio frequency power supply 51 can also be implemented as an inductive coupling effect of a coil, that is, as an ICP to generate an alternating magnetic field in the chamber 101, so as to ensure that the chamber 101 is The gas is fully and uniformly ionized, which can also meet the coating requirements of the coating equipment 100, which is not limited here.
  • the pulse power supply 52 is implemented as a unidirectional negative pulse power supply, wherein the pulse power supply 52 has a negative terminal 521 and a positive terminal 522, wherein the negative terminal 521 is electrically connected to the electrode holder 60 and Provide negative pressure, wherein the positive terminal 522 is electrically connected to the cavity 10 and grounded at a positive or zero potential, wherein the electrode holder 60 and the cavity 10 are both made of conductive materials such as metal materials, wherein The electrode holder 60 is insulated from the cavity 10.
  • the entire electrode holder 60 is a negative electrode and has a negative pressure
  • the entire cavity 10 is grounded as a positive electrode
  • the electrode holder 60 is insulated from the cavity 10 to
  • the entire chamber 101 is placed in a strong electric field. Since the substrate 600 is placed on the electrode holder 60, under the action of the strong electric field, the active particles in a high-energy state will accelerate the deposition on the The surface of the substrate 600 is thus coated.
  • the pulse power source 52 ionizes the gas in the chamber 101 through the glow discharge effect, and at the same time has a directional pulling and accelerating effect on the positive ions in the chamber 101, so that the positive ions have The bombardment effect accelerates the deposition on the surface of the substrate 600, thereby preparing the dense and high-hardness DLC film on the surface of the substrate 600.
  • the electrode holder 60 can provide as much space as possible for installing and arranging a large number of the substrate 600, and a coating process can cover the electrode. All the substrates 600 on the support 60 are coated, so as to realize large-area coating, thereby realizing mass production of DLC thin films.
  • the radio frequency power supply 51 and the pulse power supply 52 jointly provide a voltage to act on the gas in the chamber 101, wherein the low power radio frequency discharge provided by the radio frequency power supply 51 Maintain the plasma environment in the chamber 101 and suppress the arc discharge phenomenon during the high-voltage discharge process (because arc discharge is a form of discharge that is further enhanced by glow discharge, the instantaneous current can reach more than tens or even hundreds of amperes. High current passing through the surface of the substrate will damage the substrate. Therefore, in order to ensure the safety of the substrate 600, it is necessary to suppress the arc discharge phenomenon during the coating process).
  • the pulse power source 52 increases the energy of the positive ions when they reach the surface of the substrate 600 to prepare the dense and transparent DLC film.
  • the power supply device 50 in the preferred embodiment is composed of the radio frequency power supply 51 and the pulse power supply 52 to meet the coating requirements.
  • the power supply device 50 can also be implemented as only one of the radio frequency power supply 51 or the pulse power supply 52, which can also meet the coating requirements.
  • the power supply device 50 can also be implemented as a microwave power supply and other power supplies to meet the coating requirements, which is not limited here.
  • the RF voltage power and power supply time of the RF power supply 51 can be adjusted and preset according to the coating requirements for different substrates, wherein the RF voltage power of the RF power supply 51 is preferably 10-800W,
  • the pulse bias voltage, pulse frequency, duty cycle, and power supply time provided by the pulse power supply 52 can be adjusted and preset, wherein the pulse power supply 52 provides a pulse bias voltage of -100V to -5000V, and the pulse The frequency is 20-300KHz, and the duty cycle is 10%-80%, which is not limited here.
  • the negative voltage of the pulse power supply 52 Since the magnitude of the negative voltage bias provided by the pulse power supply 52 is directly related to the ionization rate of the gas in the chamber 101 and the migration ability of positive ions to the surface of the substrate 600, the negative voltage of the pulse power supply 52 The higher the voltage, the higher the energy of the positive ions, and the higher the hardness of the prepared DLC. However, it should be noted that the higher the energy, the higher the bombardment energy of the positive ions on the surface of the substrate 600. On a microscopic scale, bombardment pits will be generated on the surface of the substrate 600 and will accelerate at the same time. The temperature of the surface of the substrate 600 increases, so the negative voltage of the pulse power source 52 should not be too high to prevent the surface temperature of the substrate 600 from excessively increasing and damaging the substrate 600. In addition, the higher the pulse frequency of the pulse power source 52 is, the continuous accumulation of electric charges on the surface of the insulating part of the substrate 600 can be avoided, thereby achieving suppression of the large arc phenomenon and increasing the deposition
  • the coating equipment 100 includes a temperature detector 80, wherein the temperature detector 80 is used to detect the reaction temperature in the chamber 101 during the coating process and provide feedback, such as prompting work in the form of a screen display Personnel or voice alarms, etc., further ensure that the temperature of the substrate is not easily too high.
  • the temperature detector 80 has a thermocouple 81, wherein the thermocouple 81 is disposed on the electrode holder 60 at an equivalent position to the substrate 600, and the thermocouple 81 can detect the The reaction temperature in the chamber 101, based on the reaction temperature detected by the thermocouple 81, the temperature detector 80 determines whether the temperature threshold of the substrate 600 is exceeded, and if it exceeds, the temperature detector 80 80 feeds back an abnormal signal that the temperature is too high to remind the staff to handle or suspend the coating equipment 100 in time. If it does not exceed, the reaction temperature on the surface of the substrate 600 is normal, that is, the substrate 600 is safe.
  • the electrode holder 60 is preferably implemented as a multi-layer metal plate structure, wherein each layer can place a certain amount of the substrate 600, wherein the electrode holder 60 has at least one insulating member 61, wherein the insulating member 61 is disposed between the electrode holder 60 and the wall of the chamber 101 to insulate the electrode holder 60 from the cavity 10.
  • the insulating member 61 is implemented to be made of insulating materials such as polytetrafluoroethylene.
  • the cavity 10 is not connected to the pulse power source 52, and the electrode holder 60 is implemented as including multiple metal plates, and adjacent layers are mutually connected to each other. Insulation, wherein the positive terminal 522 and the negative terminal 521 of the pulse power source 52 are electrically connected to the metal plates of the electrode holder 60 alternately, so that the adjacent metal plates of the electrode holder 60 are mutually connected.
  • the pulse power source 52 can be implemented as a positive and negative bidirectional pulse power source, so that each metal plate of the electrode holder 60 alternately forms a positive electrode or a negative electrode, and adjacent metal plates are always positive and negative to each other. So that the substrate 600 can be placed on the metal plate of each layer, and the surface of the substrate 600 on all the metal plates can be plated with the DLC film, and The quality of the DLC film is even better.
  • the pulse power supply 52 can also be implemented as a symmetrical bidirectional pulse power supply, that is, the positive pressure and the negative pressure provided by the pulse power supply 52 have the same magnitude.
  • the pulse power source 52 is implemented as an asymmetric bidirectional pulse power source, wherein the magnitude of the negative voltage value provided by the pulse power source 52 is greater than the magnitude of the positive voltage value to provide the quality of the DLC film, which is not limited here .
  • the shape and structure of the electrode holder 60 are not limited. Within the volume of the chamber 101, the shape or number of the electrode holder 60 can be adjusted adaptively.
  • the material of the cavity 10 is stainless steel.
  • the cavity 10 has an openable and closable sealed door 15 for a worker to open or seal the cavity 101 to place or take out the substrate 600 and the cavity 101.
  • the electrode holder 60 is detachably supported in the chamber 101, so that the electrode holder 60 can be taken out of the chamber 101, so that workers can pre-install the substrate 600 outside. On the electrode holder 60, and then place the electrode holder 60 in the chamber 101. At the same time, after one coating process is completed, the staff can take out the electrode holder 60 to take out all the substrates.
  • the material 600 is used to minimize damage to the substrate 600, to ensure the safety of the substrate 600, and to facilitate cleaning of the chamber 101 and the electrode holder 60.
  • the electrode holder 60 can be reused, that is, during the second coating, the electrode holder 60 can be used to install another batch of the substrate 600 again, and then be placed in the chamber 101 Re-coating is realized inside, which is conducive to mass production.
  • the parameters of the coating equipment 100 during the coating process are as follows: Air intake: Ar/N 2 /H 2 /CH 4 : 50-500 sccm, C 2 H 2 /O 2 : 10-200 sccm; before coating (I.e. the step S02 stage) the vacuum degree of the chamber 101: less than 2 ⁇ 10 -3 Pa; during coating (i.e. the step S03 stage) the vacuum degree of the chamber 101: 0.1-20 Pa; coating voltage : -300 ⁇ -3500V, duty cycle: 5 ⁇ 100%, frequency: 20 ⁇ 360KHz; coating time: 0.1 ⁇ 5hrs, the thickness of the DLC film is less than 50 nanometers, this is only an example, not the present invention limit.
  • the coating equipment 100 further includes a housing 90, in which the cavity 10, the delivery pipeline 20, the air extraction device 30, the air extraction pipeline 40, the power supply device 50, and the Both the exhaust gas treatment device 70 and the temperature detection device 80 can be installed in the housing 90.
  • the housing 90 has a control panel, wherein the control panel is used by the staff to control the on/off or working status of the air extraction device 30 and the power supply device 50, and display the coating of the coating equipment 100 Process progress and related parameters, etc.
  • this embodiment also provides the DLC film, wherein the DLC film is prepared by the coating equipment 100 and formed on the surface of the substrate 600. It is understandable that the DLC film may be one or more layers of DLC film formed on the surface of the substrate 600 by the coating equipment 100 through one or more coatings.

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Abstract

La présente invention concerne un équipement d'application de revêtement destiné à la préparation de dépôt CDA et son utilisation. L'équipement d'application de revêtement comprend une cavité, un ensemble de conduites de transport, au moins un dispositif d'extraction d'air, au moins une conduite d'extraction d'air, un dispositif d'alimentation électrique et au moins un support d'électrode. La cavité est dotée d'une chambre ; le support d'électrode est disposé dans la chambre de façon à supporter un matériau de base ; les conduites de transport communiquent avec la chambre et sont destinées à introduire des matières premières gazeuses dans la chambre ; le dispositif d'extraction d'air communique avec la chambre au moyen de la conduite d'extraction d'air et est destiné à effectuer une manœuvre de pression négative sur la chambre et réguler la pression d'air à l'intérieur de la chambre ; et le dispositif d'alimentation électrique est électriquement connecté au support d'électrode afin de permettre à l'équipement d'application de revêtement de préparer un film à dépôt CDA sur la surface du matériau de base au moyen d'un dépôt chimique en phase vapeur.
PCT/CN2020/082801 2019-12-04 2020-04-01 Équipement d'application de revêtement permettant la préparation de dépôt cda et son utilisation Ceased WO2021109377A1 (fr)

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CN201911325608.0A CN110965040B (zh) 2019-12-04 2019-12-20 用于制备dlc的镀膜设备及其应用

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CN111676452A (zh) * 2020-06-29 2020-09-18 哈尔滨奥瑞德光电技术有限公司 一种高效镀超硬膜的方法
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CN111945135B (zh) * 2020-07-27 2022-04-26 江苏菲沃泰纳米科技股份有限公司 二进料蒸发装置及其进料方法
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