WO2021105258A1 - Polymeric electronic circuit and method for manufacturing same - Google Patents

Abstract

An electronic circuit (20), preferably a piezoelectric component, comprises a stack of at least a support (12) or a first layer (E₁, E₂, E₃) made of a first polymer, of a second layer (E₁, E₂, E₃, C₁, C₂, C₃) made of a second polymer and of a third layer (P_Q, P₁, P₂, P₃) made of a third polymer, the third layer having a thickness of between 1 nm and 100 nm and being inserted between the support or the first layer and the second layer, the support or the first layer comprising polycarbonate, polyurethane, or PEDOT: PSS, the second layer comprising PVDF, a PVDF copolymer or PEDOT: PSS, the compositions of the first and second layers being different, the third layer comprising a polyepoxide or a polyacrylate. An organic thin-film transistor may also be produced.

Description

WO 2021/105258 DESCRIPTION PCT / EP2020 / 083445

POLYMERIC ELECTRONIC CIRCUIT AND ITS PROCESS FOR

MANUFACTURING

The present patent application claims the priority of the French patent application FR19 / 13536 which will be considered as forming an integral part of the present description.

Technical area

The present description relates generally to electronic circuits and their manufacturing processes.

Prior art

[0002] For certain applications, it is desirable to be able to form a first element in a first polymer by the liquid route on a second element in a second polymer. An example of application relates to electronic circuits comprising a track made of a conductive polymer or a piezoelectric layer of polymer formed on a polymer support.

The formation of the first element by the liquid route generally comprises the deposition of a solution, more or less viscous, on the substrate in a pattern corresponding to the first element, the solution containing a solvent and the first polymer or precursors of the first polymer, and heating the deposited unit to obtain the first element.

However, one can observe a degradation, in particular a partial etching, of the second polymer element during the formation of the first polymer element by the liquid route.

Summary of the invention

An object of an embodiment is to overcome all or part of the drawbacks of electronic circuits comprising a first element in a first polymer formed by liquid on a second element in a second polymer and their manufacturing processes described above. . Another object of an embodiment is that the second polymeric element is not deteriorated during the formation of the first polymeric element.

Another object of an embodiment is that the electronic circuit can be manufactured at reduced cost.

[0008] One embodiment provides for an electronic circuit comprising a stack of at least one support or a first layer made of a first polymer, a second layer made of a second polymer and a third layer made of a third polymer, the third layer having a thickness between 1 nm and 100 nm and being interposed between the support or the first layer and the second layer, in contact with the support or the first layer and the second layer, the support or the first layer comprising polycarbonate, polyurethane, PEDOT: PSS, polyparaphenylene, polypyrrole, polythiophene, or polyaniline, the second layer comprising PVDF, a copolymer of PVDF, PEDOT: PSS, polyparaphenylene, polypyrrole, polythiophene, or polyaniline, the compositions of the first and second layers being different, the third layer comprising a polyepoxide or a polyacrylate.

[0009] According to one embodiment, the support comprises polycarbonate or polyurethane.

[0010] According to one embodiment, the support has a thickness of between 25 μm and 1 mm.

[0011] According to one embodiment, the first layer comprises PEDOT: PSS.

[0012] According to one embodiment, the thickness of the first layer is between 100 nm and 10 μm.

[0013] According to one embodiment, the thickness of the second layer is between 500 nm and 10 μm. [0014] According to one embodiment, the electronic circuit comprises several copies of said stack.

An embodiment also provides a method of manufacturing an electronic circuit comprising the formation of a stack of at least one support or a first layer in a first polymer, a second layer in a second polymer and a third layer in a third polymer, the third layer having a thickness between 1 nm and 100 nm and being interposed between the support or the first layer and the second layer, in contact with the support or the first layer and the second layer, the support or the first layer comprising polycarbonate, polyurethane, PEDOT: PSS, polyparaphenylene, polypyrrole, polythiophene, or polyaniline, the second layer comprising PVDF or a copolymer of PVDF, PEDOT: PSS, polyparaphenylene, polypyrrole, polythiophene, or polyaniline, the compositions of the first and second layers being different, the third layer comprising a polyepoxide or a polyacrylate.

According to one embodiment, the formation of the third layer comprises a step of depositing a first solution on the support or the first layer comprising precursors of the third polymer and a first solvent corresponding to water, decane, dodecane or an alcohol and a step of crosslinking the precursors of the third polymer.

[0017] According to one embodiment, the deposition step is preceded by a step of plasma treatment of the support or of the first layer.

According to one embodiment, the second layer is obtained by depositing a second solution on the first layer comprising the second polymer or precursors of second polymer and a second solvent other than water, decane, dodecane, or an alcohol.

According to one embodiment, the second solvent is cyclopentanone, acetone, toluene, ethylene glycol, butylacetate, acetaldehyde, ethyl acetate, acetic acid, acid hydrofluoric acid, nitric acid, perchloric acid, sulfuric acid, acetic anhydride, ammonia, benzene, chloroform, diethylamine, dimethyl sulfoxide, ethyl ether, hydrazine, nitrobenzene, nitromethane, perchlorethylene, sodium hydroxide, carbon disulfide, carbon tetrachloride, trichloroethane, trichlorethylene, urea, or xylene.

Brief description of the drawings

These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments given without limitation in relation to the accompanying figures, among which:

Figure 1 is a sectional view, partial and schematic, of an example of an electronic circuit;

Figure 2 is a sectional view, partial and schematic, of an embodiment of an electronic circuit;

Figure 3A is a sectional view, partial and schematic, of the structure obtained in a step of an embodiment of a manufacturing process of the electronic circuit shown in Figure 2;

FIG. 3B illustrates another step of the method;

FIG. 3C illustrates another step of the method;

FIG. 3D illustrates another step of the method;

[0027] FIG. 3E illustrates another step of the method; Figure 4 is a sectional view, partial and schematic, of an embodiment of a low gate organic transistor; and

Figure 5 is a sectional view, partial and schematic, of an embodiment of a high gate organic transistor.

Description of the embodiments

The same elements have been designated by the same references in the various figures. In particular, the structural and / or functional elements common to the different embodiments may have the same references and may have identical structural, dimensional and material properties. For the sake of clarity, only the steps and elements useful for understanding the embodiments described have been shown and are detailed.

In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "rear", "top", "bottom", "left", "right", etc., or relative, such as the terms "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc. ., Reference is made unless otherwise specified in the orientation of the figures or to an electronic circuit in a normal position of use.

In the remainder of the description, the expression "an element mainly made of a material" or "an element mainly based on a material" is understood to mean that said element comprises more than 50% by volume, preferably more 80% by volume, more preferably more than 90% by volume, of said material. In the remainder of the description, the term “electrically insulating material” or “material dielectric "a material whose electrical resistivity is greater than 10 ⁵ Qm and one calls" electrically conductive material "a material whose electrical resistivity is less than 0.1 Qm. In addition, it is considered here that the terms" insulator "and" conductor "mean" electrically insulating "and" electrically conductive "respectively. Unless otherwise specified, the expressions" approximately ",

"approximately", "substantially", and "on the order of" mean to within 10%, preferably within 5%.

Figure 1 is a sectional view, partial and schematic, of an example of an electronic circuit 10. The circuit 10 comprises a support 12 in a first polymer comprising two faces 14, 16 opposite, for example substantially plane . Circuit 10 further comprises an electronic component 18 on face 14 of support 12. According to one embodiment, electronic component 18 is a component comprising a piezoelectric or ferromagnetic layer, for example for producing a haptic sensor. . A haptic sensor is a system that creates a tactile sensation. It comprises, for example, a piezoelectric actuator making it possible to obtain accelerations or forces in the form of vibrations.

The electronic component 18 comprises a stack comprising successively from bottom to top in Figure 1:

an electrode Ei made of a second polymer resting on the face 14 of the support 12, for example in contact with the face 14 of the support 12;

a piezoelectric layer Ci made of a third polymer resting on the electrode Ei, for example in contact with the electrode Ei, and optionally on the support 12; an electrode E2 of the second polymer, resting on the piezoelectric layer Ci, for example in contact with the piezoelectric layer Ci;

a piezoelectric layer C2 of the third polymer, resting on the electrode E2, for example in contact with the electrode E;

an electrode E ₃ of the second polymer, resting on the piezoelectric layer C2, for example in contact with the piezoelectric layer C2;

a piezoelectric layer C ₃ of the third polymer, resting on the electrode E ₃ , for example in contact with the electrode E ₃ ; and

an electrode E4 of the second polymer, resting on the piezoelectric layer C ₃ , for example in contact with the piezoelectric layer C ₃ .

The electrodes Ei and E ₃ are common and the electrodes E2 and E4 are common.

The support 12 mainly comprises the first polymer, which is for example polycarbonate or polyurethane. The support 12 may comprise a coating, for example colored, not shown, delimiting the face 14.

Each electrode Ei, E2, E ₃ and E4 mainly comprises the second polymer, which is an electrically conductive polymer. The second polymer is, for example, poly (3,4-ethylenedioxythiophene): poly (styrene sulfonate), commonly designated by the acronym PEDOT: PSS, polyparaphenylene (PPP), polypyrrole (PPy), polythiophene (PTh) or polyaniline (PAni).

The piezoelectric layers Ci, C2 and C ₃ mainly comprise the third polymer which is a piezoelectric material. The third polymer corresponds, for example, to a compound based on poly (vinylidene fluoride) PVDF. The PVDF-based compound may comprise the single PVDF polymer, a single PVDF copolymer, a blend of two or more PVDF copolymers, or a blend of the PVDF polymer and at least one PVDF copolymer. Preferably, the PVDF copolymer is poly (vinylidene fluoride - trifluoro ethylene) (P (VDF-TrFE)), in particular P (VDF _x -TrFEioo- _x ) where x is a real number between 60 and 80 , especially about 70, poly (vinylidene fluoride), poly (vinylidene fluoride - trifluoroethylene - chlorofluoroethylene)

(P (VDF-TrFE-CFE)) or poly (vinylidene trifluoroethylene fluoride - chlorotrifluoro ethylene) (P (VDF-TrFE-CTFE)). The piezoelectric layers Ci, C2 and C ₃ can correspond to composites based on the third polymer to which are added, for example, particles of micrometric size, for example of average diameter equal to approximately 10 μm, in particular particles of BaTi0 ₃ , of (PbZr) Ti0 ₃ , of (BaSr) Ti0 ₃ , or of (BaSr) Nb ₂ 0 ₅ .

The support 12 may have a thickness between 25 μm and 1 mm, for example of the order of 175 μm. Each piezoelectric layer Ci, C ₂ and C ₃ can have a thickness between 500 nm and 10 μm, for example of the order of 2 μm. Each electrode Ei, E ₂ , E ₃ and E4 can have a thickness between 100 nm and 10 μm, for example of the order of 500 nm.

It may be desirable to form each electrode Ei, E ₂ , E ₃ and E ₄ and each piezoelectric layer Ci, C ₂ and C ₃ by depositing a solution, more or less viscous, the solution comprising a solvent and precursors of the polymer composing the electrode / piezoelectric layer or the polymer composing the electrode / piezoelectric layer. The deposition step can be followed by a heating step to remove the solvent and, where appropriate, to cause the polymerization of the precursors. The inventors have demonstrated that the solvent can react with the material making up the element on which the solution is deposited, in particular causing etching and / or deterioration of this element. This is the case in particular when the support 12 is made of polycarbonate or polyurethane and the solvent used for the formation of the electrode Ei is cyclopentanone, acetone, toluene, ethylene glycol, butylacetate, acetaldehyde, ethyl acetate, acetic acid, hydrofluoric acid, nitric acid, perchloric acid, sulfuric acid, acetic anhydride, ammonia, benzene, chloroform, diethylamine, dimethyl sulfoxide, ethyl ether, hydrazine, nitrobenzene, nitromethane, perchloriethylene, soda, carbon disulphide, carbon tetrachloride, trichloroethane, trichlorethylene, urea, and xylene. This is also the case in particular when each electrode E ₂ , E ₃ or E ₄ is made of PEDOT: PSS and the solvent used for the formation of the piezoelectric layer is in the list of solvents indicated above.

Figure 2 is a sectional view, partial and schematic, of an example of an electronic circuit 20. The electronic circuit 20 comprises all the elements of the electronic circuit 10 shown in Figure 1 and further comprises :

a protective layer Po interposed between the support 12 and the electrode Ec, preferably in contact with the support 12 and the electrode E;

a protective layer Pi interposed between the electrode Ei and the piezoelectric layer Ci, preferably in contact with the electrode E _x and the piezoelectric layer Ci; a protective layer P2 interposed between the electrode E2 and the piezoelectric layer C2, preferably in contact with the electrode E and the piezoelectric layer C2; and

a protective layer P ₃ interposed between the electrode E ₃ and the piezoelectric layer C ₃ , preferably in contact with the electrode E ₃ and the piezoelectric layer C ₃ .

According to one embodiment, the support 12 / each electrode Ei, E2, E ₃ comprises an upper face and the associated protective layer P ₀ , Pi, P2, P3 covers all of the part of the interposed upper face between the support 12 / the electrode E, E, E ₃ and the associated piezoelectric layer Ci, C2, C ₃ overlying it.

Each protective layer P ₀ , Pi, P2, P3 mainly comprises a polyepoxide, polyepoxides, a polyacrylate, polyacrylates or a mixture of at least two of these compounds. According to one embodiment, the monomers used for forming the polyepoxide or polyepoxides forming at least one of the protective layers Po, Pi, P2, P3 are obtained from bisphenol, in particular diglycidyl ethers and bisphenol A , or are obtained from novolac, in particular epoxyphenol-novolac or epoxy-cresol novaloque, or are aliphatic epoxides, halogenated epoxides, or epoxides of glycidylamine. According to one embodiment, each protective layer P ₀ , Pi, P2, P3 comprises a polyepoxide obtained by polymerization of the 3-Glycidyloxypropyltrimethoxysilane monomer. According to one embodiment, the monomers used for forming the polyacrylate or polyacrylates forming at least one of the protective layers P ₀ , Pi, P2, P3 are obtained from acrylic acid, or are methacrylates, or are obtained by a mixture of at least two of these compounds.

Each protective layer P ₀ , Pi, P ₂ , P ₃ has a thickness between 1 nm and 100 nm, for example equal to about 10 nm. The thickness of each protective layer Po, Pi, P2, P3 is sufficiently small so that the presence of the protective layers Po, Pi, P ₂ , P ₃ does not appreciably modify the electrical behavior of the electronic component 18. The thickness of each protective layer P ₀ , Pi, P ₂ , P ₃ is sufficiently large so that the layer covered by the protective layer P ₀ , Pi, P ₂ , P ₃ is not damaged by the solvent used for the formation of the layer covering the protective layer.

Each protective layer P ₀ , Pi, P2, P3 is formed by depositing a solution comprising a solvent and precursors of the material making up the protective layer Po, Pi, P2, P3 or directly the material making up the protective layer P ₀ , R, P ₂ , P3. The solvent is water, decane, dodecane, or an alcohol. In the case where the support 12 is of polycarbonate, the solvent is preferably water, ethanol, isopropanol or a mixture of at least two of these compounds. For the protective layers P ₀ , R, P ₂ , P3 covering piezoelectric layers Ci, C2, C ₃ based on PVDF or on a copolymer of PVDF, the solvent is preferably water or ethanol.

In the embodiment described above in relation to Figure 2, a protective layer Po is provided covering the support 12 and a protective layer Pi, P2, and P ₃ is provided covering each electrodes E, E, and E ₃ .

According to another embodiment, the protective layer P ₀ is not present. The support 12 can be based on silicon, glass, a metal, a metal alloy, a resin, a polymer, or at least two of these compounds. Examples of the polymer are polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimides (PI), in particular polyetherimides (PEI), polyether sulfones (PES), polysulfones (PSU), poly (phenylene sulfide) (PPS), polyether ether ketone (PEEK), polyacrylates (PA), polyamide-imides (PAI), polystyrene, polyethylene , polypropylene, polyamines, or cellulosic polymers. The support 12 can have a single-layer or a multi-layer structure.

According to another embodiment, at least one of the protective layers R, P ₂ , P3 is not present. According to one embodiment, each electrode Ei, E ₂ , E ₃ which is not covered with the _{corresponding protective layer Pi, P 2} , P3 is made of gold, silver, aluminum, palladium, platinum, nickel, chromium, copper, calcium, titanium and / or a metal alloy comprising at least one of these metals. Each electrode Ec, E ₂ , E ₃ which is not covered with the _{corresponding protective layer R, P 2} , P3 is made of an electrically conductive polymer other than PEDOT: PSS, in particular polyaniline (Pani), polyphenylene vinylene (PPV) or polyparaphenylene (PPP). According to another embodiment, each electrode is a conductive layer based on a composite of conductive particles (silver particles, silver nanowires, carbon nanotubes) and a matrix material such as a polymer.

Figures 3A to 3E are sectional views, partial and schematic, of structures obtained in successive steps of an embodiment of a method of manufacturing the electronic circuit 20 shown in Figure

2.

FIG. 3A shows the structure obtained after a step of preparing the face 14 of the support 12. The preparation step can comprise a step of activating the face 14 by a plasma treatment of the face 14. This makes it possible in particular to eliminate the traces of organic contaminants on the surface of the support 12 as well as the fragments of the polymer (oligomers) composing the support 12 and weakly bonded present on the surface of the support 12. This also makes it possible to open chemical bonds on the face 14 in order to improve the adhesion of the layer deposited subsequently on the face 14. According to one embodiment, the plasma used is an O ₂ / SF ₆ plasma, an O ₂ / CF ₄ plasma or an ozone plasma. The plasma treatment can be low pressure plasma treatment. The pressure in the reactor in which the plasma treatment is carried out can be between 66 Pa (500 mTorr) and 1.3 Pa (10 mTorr), for example equal to 20 Pa (150 mTorr). The duration of the plasma treatment can be between 10 s and 300 s, for example equal to 60 s. The power of the plasma may be between 50 W and 600 W, for example equal to 500 W. The flux of each species making up the plasma may be between 5% and 100% of all the fluxes. In the case of an O2 / SF6 plasma, the ratio between the O2 flow and the SF ₆ flow can be between 100/5 and 10/5.

FIG. 3B represents the structure obtained after the formation of the protective layer Po. According to one embodiment, the formation of the protective layer Po comprises the preparation of a solution comprising a solvent and precursors of the component polymer. the protective layer Po or directly the polymer making up the protective layer Po. According to one embodiment, the ratio between the volume of the precursors / of the polymer and the volume of the solvent is between 1/20 and 1/5, preferably between 1/10 and 1/5, for example equal to 1/8. The solvent is a solvent which does not chemically react with the material making up the support 12. The solvent is water, decane, dodecane, or an alcohol. In the case where the support 12 is made of polycarbonate, the solvent is preferably water, ethanol, isopropanol or a mixture of at least two of these compounds. According to one embodiment, the precursors are monomers used for the formation of a polyepoxide or polyepoxides and are monomers obtained from bisphenol, in particular diglycidyl ethers and bisphenol A, or are obtained from novolac, in particular epoxyphenol-novolac or epoxy-cresol novolac, or are aliphatic epoxides, halogenated epoxides, or epoxides of glycidylamine. According to one embodiment, each protective layer P ₀ , Pi, P2, P3 comprises a polyepoxide obtained by polymerization of the 3-Glycidyloxypropyltrimethoxysilane monomer. According to one embodiment, the precursors are monomers used for the formation of a polyacrylate or polyacrylates and are obtained from acrylic acid, or are methacrylates, or are a mixture of at least two of these compounds. According to one embodiment, the precursors are 3-Glycidyloxypropyltrimethoxyslane.

The method of forming the protective layer Po can correspond to a so-called additive method, for example by direct printing of the solution at the desired locations, for example by inkjet printing, heliography, screen printing, flexography, coating by spraying (in English spray coating) or depositing of drops (in English drop-casting). The method for forming the protective layer Po may correspond to a so-called subtractive method, in which the solution is deposited on the entire structure and in which the unused portions are then removed, for example by photolithography or laser ablation. Depending on the material considered, the deposition on the entire structure can be carried out for example by spin coating, spray coating, heliography, die coating (slot-die coating), coating blade-coating, flexography or screen printing. According to one embodiment, the method comprises a heating step to crosslink the precursors and obtain the formation of the protective layer Po. This may be a heating step between 50 ° C and 180 ° C, for example at about 100 ° C. The duration of the heating step can be between 1 minute and 60 minutes, for example equal to approximately 2 minutes.

FIG. 3C represents the structure obtained after the formation of the electrode Ei. According to one embodiment, the formation of the electrode Ei comprises the preparation of a solution comprising a solvent and precursors of the second polymer making up the electrode Ei or directly the second polymer making up the electrode Ei. The solvent of the solution can be cyclopentanone, acetone, toluene, ethylene glycol, butylacetate, acetaldehyde, ethyl acetate, acetic acid, hydrofluoric acid, nitric acid , perchloric acid, sulfuric acid, acetic anhydride, ammonia, benzene, chloroform, diethylamine, dimethylsulfoxide, ethyl ether, hydrazine, nitrobenzene, nitromethane, perchloriethylene, soda, carbon disulphide, carbon tetrachloride, trichloroethane, trichlorethylene, urea, or xylene. The solution can also comprise precursors of a polymer other than the second polymer, in particular the third polymer or precursors of the third polymer, for example precursors of a glycidylamine epoxide, in particular 3-Glycidyloxypropyltrimethoxysilane.

The method for forming the electrode Ei may correspond to an additive method or a subtractive method as described above. The deposition of the solution can be followed by a step of heating between 80 ° C and 180 ° C, for example at about 145 ° C. The duration of the heating stage can be between 5 minutes and 60 minutes, for example equal to approximately 15 minutes.

FIG. 3D represents the structure obtained after a step of preparing the electrode Ei and after the formation of the protective layer Pi. The step of preparing the electrode Ei can comprise a step of plasma treatment such as this has been described previously in relation to FIG. 3A. The method of forming the protective layer Pi can be identical to what has been described above for the formation of the protective layer Po except that the annealing step can also be followed by another annealing step. at a higher temperature, for example between 130 ° C and 150 ° C, for a period of between 1 minute and 60 minutes, for example for about 5 minutes. In the case where the electrode Ei is made of PEDOT: PSS, the solvent is preferably water or ethanol.

FIG. 3E represents the structure obtained after the formation of the piezoelectric layer Ci. According to one embodiment, the formation of the piezoelectric layer Ci comprises the preparation of a solution comprising a solvent and precursors of the polymer composing the layer. piezoelectric Ci or directly the polymer composing the piezoelectric layer Ci. The process for forming the piezoelectric layer Ci may correspond to an additive process or a subtractive process as described above. The solvent of the solution can be one of the solvents indicated above for the formation of the electrode Ei. The deposition of the solution can be followed by a step of heating between 80 ° C and 180 ° C, for example at about 145 ° C. The duration of the heating step can be between 1 minute and 60 minutes, for example equal to approximately 5 minutes. The method continues with the formation of the å2r electrode of the protective layer P2 covering the electrode E2, of the piezoelectric layer C2, of the electrode E ₃ , of the protective layer P ₃ covering the electrode E ₃ , the piezoelectric layer C ₃ , and the electrode E ₄ . The method of forming each electrode E2, E ₃ and E ₄ can correspond to that described above for the formation of the electrode Ei. The method for forming each piezoelectric layer C2 and C ₃ may correspond to that described above for the formation of the piezoelectric layer Ci. The method for forming each protective layer P2 and P ₃ may correspond to that described above for the formation of the protective layer R ₄ .

Figures 4 and 5 are sectional views, partial and schematic, of an embodiment of an electronic circuit 30. The electronic circuit 30 comprises the same elements as the electronic circuit 20 shown in Figure 2 to difference that the electronic component 18 of the circuit 30 is an organic transistor in thin films.

The transistor 18 comprises:

an organic semiconductor block 32 in which the drain, source and channel regions of the transistor are formed;

- conductive tracks 34 forming the source and drain contacts of the transistor;

a conductive track 38 forming the gate of the transistor, facing the semiconductor block 32; and

an insulating layer 40 interposed between the conductive track 38 and the semiconductor block 32 and forming the gate insulator of the transistor.

The electronic circuit 30 further comprises a protective layer P interposed between the transistor 18 and the support 12. The electronic circuit 30 can furthermore comprise a protective layer, not shown, interposed between each conductive track 34 and the semiconductor block 32.

The semiconductor block 32 can be made of pentacene, polythyiophene, fullerene C _ÔCU or fullerene C70, or perylene diimide. The conductive tracks 34, 38 can be in the materials described above for the electrodes Ei, E ₂ , E ₃ and E ₄ . The protective layer P can be in the materials described above for the protective layers Peu Pi, P2, and P ₃ . The thickness of the protective layer P may be between 1 nm and 100 nm, for example equal to approximately 10 nm.

FIG. 4 represents a so-called "low gate" transistor configuration, in which the gate 38 is in contact with the protective layer P, and in which the insulating layer 40 is located between the support 12 and the conductive tracks 34.

FIG. 5 represents a so-called "high gate" transistor configuration, in which the conductive tracks 34 are in contact with the protective layer P, and in which the insulating layer 40 is located between the support 12 and the grid 38.

Various embodiments and variants have been described. Those skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will be apparent to those skilled in the art. Finally, the practical implementation of the embodiments and variants described is within the abilities of those skilled in the art based on the functional indications given above.

Claims

1. Electronic circuit (20; 30) comprising a stack of at least one support (12) or a first layer (Ei, E2, E ₃ ) of a first polymer, of a second layer (Ei, E2, E ₃₎ , Ci, C2, C ₃ ) in a second polymer and a third layer (Po, Pi, P ₂ , P ₃ ) in a third polymer, the third layer having a thickness between 1 nm and 100 nm and being interposed between the support or the first layer and the second layer, in contact with the support or the first layer and the second layer, the support or the first layer comprising polycarbonate, polyurethane, PEDOT: PSS, polyparaphenylene, polypyrrole , polythiophene, or polyaniline, the second layer comprising PVDF, a copolymer of PVDF, PEDOT: PSS, polyparaphenylene, polypyrrole, polythiophene, or polyaniline, the compositions of the first and second layers being different, the third layer comprising a polyepoxide or a polyacrylate. 2. Electronic circuit according to claim 2, wherein the support (12) comprises polycarbonate or polyurethane. 3. Electronic circuit according to claim 1 or 2, wherein the support (12) has a thickness between 25 µm and 1 mm. 4. Electronic circuit according to any one of claims 1 to 3, wherein the first layer (Ei, E2, E ₃ ) comprises PEDOT: PSS. 5. Electronic circuit according to any one of claims 1 to 4, wherein the thickness of the first layer (Ei, E2, E ₃ ) is between 100 nm and 10 pm. 6. Electronic circuit according to any one of claims 1 to 5, wherein the thickness of the second layer (Ci, C2, C ₃ ) is between 500 nm and 10 pm. 7. An electronic circuit according to any one of claims 1 to 6, comprising several copies of said stack. 8. A method of manufacturing an electronic circuit (20; 30) comprising forming a stack of at least one support (12) or a first layer (E, E, E ₃ ) of a first polymer, of a second layer (E, E, E ₃ , Ci, C2, C ₃ ) in a second polymer and a third layer (Po, Pi, P2, P3) in a third polymer, the third layer having a thickness between 1 nm and 100 nm and being interposed between the support or the first layer and the second layer, in contact with the support or the first layer and the second layer, the support or the first layer comprising polycarbonate, polyurethane, PEDOT : PSS, polyparaphenylene, polypyrrole, polythiophene, or polyaniline, the second layer comprising PVDF or a copolymer of PVDF, PEDOT: PSS, polyparaphenylene, polypyrrole, polythiophene, or polyaniline, the compositions the first and second layers being different, the third layer comprising a polyepoxy e or a polyacrylate. 9. The method of claim 8, wherein the formation of the third layer (Po, Pi, P ₂ , P ₃ ) comprises a step of depositing a first solution on the support (12) or the first layer (Ei, E2, E ₃ ) comprising precursors of the third polymer and a first solvent corresponding to water, decane, dodecane, or to an alcohol and a step of crosslinking the precursors of the third polymer 10. The method of claim 9, wherein the deposition step is preceded by a step of plasma treatment of the support (12) or of the first layer (E, E, E ₃₎ . 11. Method according to any one of claims 8 to 10, wherein the second layer (Ci, C ₂ , C ₃₎ is obtained by depositing a second solution on the first layer comprising the second polymer or precursors of second polymer and a second solvent other than water, decane, dodecane, or an alcohol. 12. The method of claim 11, wherein the second solvent is cyclopentanone, acetone, toluene, ethylene glycol, butylacetate, acetaldehyde, ethyl acetate, acetic acid, l '. hydrofluoric acid, nitric acid, perchloric acid, sulfuric acid, acetic anhydride, ammonia, benzene, chloroform, diethylamine, dimethyl sulfoxide, ethyl ether, hydrazine, nitrobenzene , nitromethane, perchlorethylene, sodium hydroxide, carbon disulfide, carbon tetrachloride, trichloroethane, trichlorethylene, urea, or xylene.