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WO2021174571A1 - Piezoelectric mems microphone - Google Patents

Piezoelectric mems microphone Download PDF

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Publication number
WO2021174571A1
WO2021174571A1 PCT/CN2020/078762 CN2020078762W WO2021174571A1 WO 2021174571 A1 WO2021174571 A1 WO 2021174571A1 CN 2020078762 W CN2020078762 W CN 2020078762W WO 2021174571 A1 WO2021174571 A1 WO 2021174571A1
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WO
WIPO (PCT)
Prior art keywords
piezoelectric
diaphragm
mems microphone
free end
fixed end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/078762
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French (fr)
Chinese (zh)
Inventor
石正雨
童贝
李杨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AAC Technologies Holdings Shenzhen Co Ltd
Original Assignee
AAC Acoustic Technologies Shenzhen Co Ltd
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Publication date
Application filed by AAC Acoustic Technologies Shenzhen Co Ltd filed Critical AAC Acoustic Technologies Shenzhen Co Ltd
Publication of WO2021174571A1 publication Critical patent/WO2021174571A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/005Electrostatic transducers using semiconductor materials
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/04Microphones
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/003Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension

Definitions

  • the present invention relates to the technical field of acousto-electricity, in particular to a piezoelectric MEMS microphone.
  • MEMS microphone refers to a microphone manufactured based on MEMS (Microelectromechanical Systems) technology, that is, a miniature microphone manufactured on a silicon micro-substrate using MEMS processing technology, so it is also called a silicon micro-microphone.
  • MEMS Microelectromechanical Systems
  • MEMS microphones Different from traditional microphones, MEMS microphones have the characteristics of small size, light weight, simple installation, easy array formation, low cost, and mass manufacturing. They are widely used in mobile phones and notebook computers in the consumer electronics field, hands-free phones in the automotive field, and medical fields. Hearing aids and so on.
  • the related art piezoelectric MEMS microphone includes a plurality of tapered diaphragms, the diaphragms have a fixed end, a main body, and a free end in sequence, and the main body of each diaphragm protrudes from the fixed end. Converge towards the same point, so that the free ends converge together.
  • the length of the above-mentioned diaphragm will inevitably be too long, so that the resonance frequency of the microphone is too low, thereby reducing the sensitivity of the microphone.
  • the purpose of the present invention is to provide a piezoelectric MEMS microphone with high sensitivity.
  • the present invention provides a piezoelectric MEMS microphone, including:
  • the support portion divides the piezoelectric diaphragm into two vibration regions, and the two vibration regions are symmetrically arranged with respect to the support portion.
  • each of the vibration regions is provided with at least two diaphragms, and the free ends of two adjacent diaphragms are arranged opposite to each other.
  • each of the vibration areas is trapezoidal, each of the vibration areas includes four diaphragms, and the free ends of the four diaphragms all extend toward the center of the vibration area.
  • the piezoelectric diaphragm further includes a peripheral portion surrounding the vibration area, and the peripheral portion is stacked and fixed above the base.
  • the main body has a trapezoidal shape, which includes a first side connected with the fixed end, a second side provided at the free end, and two sides connected between the first side and the second side.
  • a hypotenuse, the length of the first side is greater than the length of the second side, and the second side and the two oblique sides are both suspended above the back cavity.
  • a gap is formed between part of the first side edge and the peripheral portion and/or the supporting portion.
  • the gap is formed between two adjacent second side edges of the four diaphragms, the gap is formed between two adjacent hypotenuses, and the adjacent first side edges are formed.
  • the gap is formed between the two side edges and the hypotenuse.
  • the diaphragm includes a first electrode layer, a piezoelectric layer, and a second electrode layer stacked in sequence.
  • the diaphragm includes a first electrode layer, a piezoelectric layer, a second electrode layer, a piezoelectric layer, and a first electrode layer stacked in sequence.
  • the piezoelectric MEMS microphone provided by the present invention is provided with a support part on the substrate, and the microphone is also provided with a piezoelectric diaphragm arranged directly opposite to the back cavity, and the support part connects the piezoelectric
  • the diaphragm is divided into at least two vibration regions, so that the sound pressure utilization area is larger under a given area of the piezoelectric diaphragm; each vibration region is provided with at least one diaphragm, and the length of the diaphragm is relatively short, So that the microphone has a higher resonance frequency, thereby increasing the sensitivity of the microphone.
  • FIG. 1 is a schematic diagram of a three-dimensional structure of a piezoelectric MEMS microphone provided by a preferred embodiment of the present invention
  • FIG. 2 is a schematic diagram of the orthographic projection structure of the piezoelectric MEMS microphone shown in FIG. 1;
  • Fig. 3 is a cross-sectional view of the piezoelectric MEMS microphone shown in Fig. 2 along the line A-A;
  • FIG. 4 is a schematic diagram of the enlarged structure of the piezoelectric MEMS microphone shown in FIG. 2 at B;
  • FIG. 5 is a schematic diagram of the enlarged structure at C of the piezoelectric MEMS microphone shown in FIG. 2.
  • the piezoelectric MEMS microphone 100 provided in accordance with the present invention includes: a substrate 2 having a back cavity 20 and a piezoelectric diaphragm 1 arranged opposite to the back cavity 20.
  • the piezoelectric diaphragm 1 includes a supporting portion 12 disposed above the back cavity 20.
  • the supporting portion 12 partitions the piezoelectric diaphragm 1 into at least two vibration regions 10.
  • the supporting portion 12 divides the piezoelectric diaphragm 1 into two vibration regions 10, so that the sound pressure utilization area is larger under a given area of the piezoelectric diaphragm 1; it is understandable that In other embodiments, the supporting portion 12 may divide the piezoelectric diaphragm 1 into more or less vibration regions 10.
  • the orthographic view of the vibrating area 10 is substantially trapezoidal.
  • the two vibration regions 10 are symmetrically arranged with respect to the supporting portion 12.
  • the piezoelectric diaphragm 1 further includes a peripheral portion 15 arranged around the vibration area 10.
  • the peripheral portion 15 and the supporting portion 12 are made of the same material.
  • the peripheral portion 15 is stacked and fixed on the base 2.
  • the supporting portion 12 and the peripheral portion 15 are formed by etching.
  • the piezoelectric diaphragm 1 also includes at least one diaphragm 14 arranged in each vibration area 10.
  • Each diaphragm 14 is formed by stacking at least three layers of materials.
  • the diaphragm 14 includes a first electrode layer 101, a piezoelectric layer 102, and a second electrode layer 103 that are sequentially stacked; or, the diaphragm 14 includes a first electrode layer 101, a pressure The electrical layer 102, the second electrode layer 103, the piezoelectric layer 102, and the first electrode layer 101.
  • the peripheral portion 15, the supporting portion 12, and the diaphragm 14 are integrally formed with the same material, and each part is formed by etching.
  • the diaphragm 14 includes a fixed end 142 connected to the base 2 and/or the supporting portion 12, a free end 143 arranged parallel to and opposite to the fixed end 142, and a connection between the fixed end 142 and the free end 143. ⁇ 141 ⁇ Main body 141.
  • the width of the main body 141 gradually decreases from the fixed end 142 toward the free end 141.
  • Both the free end 143 and the main body 141 are suspended above the back cavity 20.
  • the fixed end 142 is substantially elongated
  • the free end 143 is also substantially elongated and is arranged parallel to the fixed end 142.
  • the fixed end 142 is connected to the base 2 through the peripheral portion 15 so as to strengthen the connection strength between the fixed end 142 and the base 2.
  • the main body 141 is substantially trapezoidal, and includes a first side 1411 connected to the fixed end 142, a second side 1412 overlapping with the free end 142, and a second side 1411 connected to the first side 1411 and the second side 1411. 1412 and two oblique sides 1413 arranged at intervals.
  • the first side 1411 and the second side 1412 are arranged in parallel, and the length of the first side 1411 is greater than the length of the second side 1412.
  • the second side 1412 and the two oblique sides 1413 are both suspended above the back cavity 20.
  • a gap 145 is formed between the first side 1411 and the supporting portion 12.
  • the coverage area of the electrode layers (101, 102, 103) will also be optimized according to the slot structure to obtain the optimal signal-to-noise ratio.
  • a gap 145 is formed between the adjacent second sides 1412 between the two diaphragms 14 and a gap 145 is also formed between adjacent hypotenuses 1413.
  • a gap 145 is also formed between the side 1412 and the hypotenuse 1413.
  • At least two diaphragms 14 may be provided in the vibrating area 10, and the free ends of two adjacent diaphragms 14 are arranged opposite to each other.
  • the vibrating area 10 has a trapezoidal shape and four diaphragms 14 are provided. They are a first diaphragm 1401, a second diaphragm 1402, a third diaphragm 1403, and a fourth diaphragm 1404, respectively.
  • the free ends 142 of the first diaphragm 1401, the second diaphragm 1402, the third diaphragm 1403, and the fourth diaphragm 1404 all extend toward the center of the vibration area 10.
  • the first diaphragm 1401 and the second diaphragm 1402 are symmetrically arranged, and the third diaphragm 1403 and the fourth diaphragm 1404 are located on opposite sides of the first diaphragm 1401 and the second diaphragm 1402, respectively.
  • the first diaphragm 1401 is connected to the peripheral portion 15 through the fixed end 141, and a gap 145 is formed between the first side 1411 and the base 2.
  • the second diaphragm 1402 is connected to the supporting portion 12 through the fixed end 142, and a gap 145 is formed between the first side 1411 of the second diaphragm 1402 and the supporting portion 12.
  • the second side 1412 of the first diaphragm 1401 and the second side 1412 of the second diaphragm 1402 form a gap 145 between each other.
  • the third diaphragm 1403 is connected to one side of the base 2 through the fixed end 141, and its first side 1411 and one side of the peripheral portion 15 form a gap 145; the second side 1412 of the third diaphragm 1403 is connected to the second side 1412
  • a gap is formed between one oblique side 1413 of the diaphragm 1402, and a gap 145 is formed between one oblique side 1413 of the third diaphragm 1403 and the supporting portion 12, and the other oblique side 1413 is connected to one of the oblique sides of the first diaphragm 1401.
  • a gap 145 is formed between 1413.
  • the fourth diaphragm 1404 is connected to the other side of the peripheral portion 15 through the fixed end 141, and its first side 1411 and the other side of the peripheral portion 15 form a gap 145; the second side 1412 of the fourth diaphragm 1404 A gap 145 is formed with the other oblique side 1413 of the second diaphragm 1402; one of the oblique sides 1413 of the fourth diaphragm 1404 and the other oblique side 1413 of the first diaphragm 1401 form a gap 145, and the other oblique side 1413 is connected to the support A gap 145 is formed between the parts 12.
  • the piezoelectric MEMS microphone provided by the present invention is provided with a support part on the substrate, and the microphone is also provided with a piezoelectric diaphragm arranged directly opposite to the back cavity, and the support part connects the piezoelectric
  • the diaphragm is divided into at least two vibration regions, so that the sound pressure utilization area is larger under a given area of the piezoelectric diaphragm; each vibration region is provided with at least one diaphragm, and the length of the diaphragm is relatively short, So that the microphone has a higher resonance frequency, thereby increasing the sensitivity of the microphone.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Micromachines (AREA)

Abstract

The present invention provides a piezoelectric MEMS microphone, comprising: a base having a back chamber, and a piezoelectric diaphragm arranged directly opposite to the back chamber. The piezoelectric diaphragm comprises a support portion arranged above the back chamber; the support portion divides the piezoelectric diaphragm into at least two vibration regions; the piezoelectric diaphragm further comprises at least one diaphragm arranged in each vibration region, the diaphragm comprising a fixed end connected to the base or the support portion, a free end arranged parallel to and opposite to the fixed end, and a main body portion connected to the fixed end and the free end, and the free end and the main body portion are both suspended above the back chamber; the width of the main body portion gradually decreases along a direction from the fixed end to the free end. Compared with the related art, the piezoelectric MEMS microphone has a high resonant frequency and a large sound pressure utilization area, so that the sensibility of the microphone is improved.

Description

压电MEMS麦克风Piezo MEMS microphone 技术领域Technical field

本发明涉及声电技术领域,尤其涉及一种压电MEMS麦克风。The present invention relates to the technical field of acousto-electricity, in particular to a piezoelectric MEMS microphone.

背景技术Background technique

MEMS麦克风是指基于MEMS(Microelectromechanical Systems)技术制造的麦克风,即在一个硅微基片上利用MEMS加工工艺制作的微型麦克风,因此也称为硅微麦克风。MEMS microphone refers to a microphone manufactured based on MEMS (Microelectromechanical Systems) technology, that is, a miniature microphone manufactured on a silicon micro-substrate using MEMS processing technology, so it is also called a silicon micro-microphone.

与传统麦克风不同,MEMS麦克风具有尺寸小质量轻、安装简单、易形成阵列、成本低以及批量制造等特点,广泛应用于消费电子领域的手机、笔记本电脑等、汽车领域的免提电话、医学领域的助听器等等。Different from traditional microphones, MEMS microphones have the characteristics of small size, light weight, simple installation, easy array formation, low cost, and mass manufacturing. They are widely used in mobile phones and notebook computers in the consumer electronics field, hands-free phones in the automotive field, and medical fields. Hearing aids and so on.

相关技术的所述压电MEMS麦克风包括多个渐缩膜片,所述膜片具有依次固定端、主体部和自由端,各个所述膜片的所述主体部自所述固定端伸出并朝向同一点汇聚,使所述自由端汇聚在一起。但是上述膜片长度将不可避免的过长,以使得麦克风谐振频率过低,从而降低了麦克风灵敏度。The related art piezoelectric MEMS microphone includes a plurality of tapered diaphragms, the diaphragms have a fixed end, a main body, and a free end in sequence, and the main body of each diaphragm protrudes from the fixed end. Converge towards the same point, so that the free ends converge together. However, the length of the above-mentioned diaphragm will inevitably be too long, so that the resonance frequency of the microphone is too low, thereby reducing the sensitivity of the microphone.

因此,必须提供一种新的压电MEMS麦克风以解决上述技术问题。Therefore, a new piezoelectric MEMS microphone must be provided to solve the above technical problems.

技术问题technical problem

本发明的目的在于提供一种灵敏度高的压电MEMS麦克风。The purpose of the present invention is to provide a piezoelectric MEMS microphone with high sensitivity.

技术解决方案Technical solutions

为了达到上述目的,本发明提供了一种压电MEMS麦克风,包括:In order to achieve the above objective, the present invention provides a piezoelectric MEMS microphone, including:

具有背腔的基底;正对所述背腔设置的压电振膜,所述压电振膜包括设置于所述背腔上方的支撑部;所述支撑部将所述压电振膜分隔成至少两个振动区域;所述压电振膜还包括设于每个所述振动区域的至少一个膜片,所述膜片包括与所述基底或所述支撑部连接的固定端、与所述固定端平行且相对设置的自由端以及连接固定端与所述自由端的主体部,所述自由端与主体部均悬置于所述背腔上方;所述主体部的宽度自所述固定端朝所述自由端的方向逐渐减小。A substrate with a back cavity; a piezoelectric vibrating membrane arranged opposite to the back cavity, the piezoelectric vibrating membrane including a supporting part arranged above the back cavity; the supporting part separates the piezoelectric vibrating membrane into At least two vibrating regions; the piezoelectric vibrating membrane further includes at least one diaphragm provided in each of the vibrating regions, the diaphragm including a fixed end connected to the base or the supporting portion, and The fixed ends are parallel and opposite to the free ends and the main body part connecting the fixed end and the free end, the free end and the main body are both suspended above the back cavity; the width of the main body faces from the fixed end The direction of the free end gradually decreases.

优选地,所述支撑部将所述压电振膜分隔成两个振动区域,且两个振动区域关于所述支撑部对称设置。Preferably, the support portion divides the piezoelectric diaphragm into two vibration regions, and the two vibration regions are symmetrically arranged with respect to the support portion.

优选地,每个所述振动区域设有至少两个所述膜片,且相邻两个膜片的自由端相对设置。Preferably, each of the vibration regions is provided with at least two diaphragms, and the free ends of two adjacent diaphragms are arranged opposite to each other.

优选地,每个所述振动区域呈梯形,每个所述振动区域包括四个膜片,所述四个膜片的自由端均朝向所述振动区域的中心延伸。Preferably, each of the vibration areas is trapezoidal, each of the vibration areas includes four diaphragms, and the free ends of the four diaphragms all extend toward the center of the vibration area.

优选地,所述压电振膜还包括环绕所述振动区域的周边部,所述周边部叠设且固定于所述基底的上方。Preferably, the piezoelectric diaphragm further includes a peripheral portion surrounding the vibration area, and the peripheral portion is stacked and fixed above the base.

优选地,所述主体部呈梯形,其包括与所述固定端连接的第一侧边、设置于所述自由端的第二侧边以及连接在第一侧边与第二侧边之间的两条斜边,所述第一侧边的长度大于所述第二侧边的长度,所述第二侧边以及两条斜边均悬置于所述背腔的上方。Preferably, the main body has a trapezoidal shape, which includes a first side connected with the fixed end, a second side provided at the free end, and two sides connected between the first side and the second side. A hypotenuse, the length of the first side is greater than the length of the second side, and the second side and the two oblique sides are both suspended above the back cavity.

优选地,部分所述第一侧边与所述周边部和/或所述支撑部之间形成缝隙。Preferably, a gap is formed between part of the first side edge and the peripheral portion and/or the supporting portion.

优选地,所述四个膜片中相邻的两条所述第二侧边之间形成所述缝隙、相邻的两条所述斜边之间形成所述缝隙以及相邻的所述第二侧边与所述斜边之间均形成所述缝隙。Preferably, the gap is formed between two adjacent second side edges of the four diaphragms, the gap is formed between two adjacent hypotenuses, and the adjacent first side edges are formed. The gap is formed between the two side edges and the hypotenuse.

优选地,所述膜片包括依次堆叠设置的第一电极层、压电层、第二电极层。Preferably, the diaphragm includes a first electrode layer, a piezoelectric layer, and a second electrode layer stacked in sequence.

优选地,所述膜片包括依次堆叠设置的第一电极层、压电层、第二电极层、压电层和第一电极层。Preferably, the diaphragm includes a first electrode layer, a piezoelectric layer, a second electrode layer, a piezoelectric layer, and a first electrode layer stacked in sequence.

有益效果Beneficial effect

与相关技术相比,本发明提供的上述压电MEMS麦克风通过在基底上设置支撑部,麦克风还设有与所述背腔正对设置的压电振膜,所述支撑部将所述压电振膜分隔成至少两个振动区域,以使得在给定压电振膜的面积下对声压的利用面积达到更大;每个振动区域设置至少一个膜片,且膜片的长度较短,从而使麦克风具有更高的谐振频率,进而提高麦克风的灵敏度。Compared with the related art, the piezoelectric MEMS microphone provided by the present invention is provided with a support part on the substrate, and the microphone is also provided with a piezoelectric diaphragm arranged directly opposite to the back cavity, and the support part connects the piezoelectric The diaphragm is divided into at least two vibration regions, so that the sound pressure utilization area is larger under a given area of the piezoelectric diaphragm; each vibration region is provided with at least one diaphragm, and the length of the diaphragm is relatively short, So that the microphone has a higher resonance frequency, thereby increasing the sensitivity of the microphone.

附图说明Description of the drawings

为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图,其中:In order to explain the technical solutions in the embodiments of the present invention more clearly, the following will briefly introduce the drawings needed in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative work, other drawings can be obtained based on these drawings, among which:

图1为本发明较佳实施例提供的压电MEMS麦克风立体结构示意图;FIG. 1 is a schematic diagram of a three-dimensional structure of a piezoelectric MEMS microphone provided by a preferred embodiment of the present invention;

图2为图1所示的所述压电MEMS麦克风的正投影结构示意图;2 is a schematic diagram of the orthographic projection structure of the piezoelectric MEMS microphone shown in FIG. 1;

图3为图2所示的所述压电MEMS麦克风沿A-A线的剖视图;Fig. 3 is a cross-sectional view of the piezoelectric MEMS microphone shown in Fig. 2 along the line A-A;

图4为图2所示的所述压电MEMS麦克风在B处的放大结构示意图;4 is a schematic diagram of the enlarged structure of the piezoelectric MEMS microphone shown in FIG. 2 at B;

图5为图2所示的所述压电MEMS麦克风在C处的放大结构示意图。FIG. 5 is a schematic diagram of the enlarged structure at C of the piezoelectric MEMS microphone shown in FIG. 2.

本发明的实施方式Embodiments of the present invention

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

请同时参阅图1-5,根据本发明提供的压电MEMS麦克风100包括:具有背腔20的基底2和正对背腔20设置的压电振膜1。Referring to FIGS. 1-5 at the same time, the piezoelectric MEMS microphone 100 provided in accordance with the present invention includes: a substrate 2 having a back cavity 20 and a piezoelectric diaphragm 1 arranged opposite to the back cavity 20.

压电振膜1包括设置于背腔20上方的支撑部12。支撑部12将压电振膜1分隔成至少两个振动区域10。在本实施例中,支撑部12将压电振膜1分隔成两个振动区域10,从而使得在给定压电振膜1的面积下对声压的利用面积达到更大;可以理解的是,在其他实施例中,支撑部12可以将压电振膜1划分成更多或更少的振动区域10。在本实施例中,振动区域10的正投影视图大致呈梯形。两个振动区域10关于该支撑部12对称设置。The piezoelectric diaphragm 1 includes a supporting portion 12 disposed above the back cavity 20. The supporting portion 12 partitions the piezoelectric diaphragm 1 into at least two vibration regions 10. In this embodiment, the supporting portion 12 divides the piezoelectric diaphragm 1 into two vibration regions 10, so that the sound pressure utilization area is larger under a given area of the piezoelectric diaphragm 1; it is understandable that In other embodiments, the supporting portion 12 may divide the piezoelectric diaphragm 1 into more or less vibration regions 10. In this embodiment, the orthographic view of the vibrating area 10 is substantially trapezoidal. The two vibration regions 10 are symmetrically arranged with respect to the supporting portion 12.

该压电振膜1还包括环绕振动区域10设置的周边部15。该周边部15与支撑部12采用相同材料制成。周边部15叠设且固定于基底2上,在制作压电MEMS麦克风的过程中,通过蚀刻形成支撑部12和周边部15。The piezoelectric diaphragm 1 further includes a peripheral portion 15 arranged around the vibration area 10. The peripheral portion 15 and the supporting portion 12 are made of the same material. The peripheral portion 15 is stacked and fixed on the base 2. In the process of manufacturing the piezoelectric MEMS microphone, the supporting portion 12 and the peripheral portion 15 are formed by etching.

该压电振膜1还包括设于每个振动区域10中的至少一个膜片14。每个膜片14至少由三层材料堆叠而成。可选地,所述膜片14包括依次堆叠设置的第一电极层101、压电层102、第二电极层103;或者,所述膜片14包括依次堆叠设置的第一电极层101、压电层102、第二电极层103、压电层102和第一电极层101。周边部15、支撑部12以及膜片14为采用相同的材料一体成型,通过刻蚀形成各个部分。The piezoelectric diaphragm 1 also includes at least one diaphragm 14 arranged in each vibration area 10. Each diaphragm 14 is formed by stacking at least three layers of materials. Optionally, the diaphragm 14 includes a first electrode layer 101, a piezoelectric layer 102, and a second electrode layer 103 that are sequentially stacked; or, the diaphragm 14 includes a first electrode layer 101, a pressure The electrical layer 102, the second electrode layer 103, the piezoelectric layer 102, and the first electrode layer 101. The peripheral portion 15, the supporting portion 12, and the diaphragm 14 are integrally formed with the same material, and each part is formed by etching.

具体地,所述膜片14包括与所述基底2和/或支撑部12连接的固定端142、与固定端142平行且相对设置的自由端143以及连接固定端142与自由端143之间的主体部141。主体部141的宽度自固定端142朝自由端141的方向逐渐减小。自由端143和主体部141均悬置于背腔20的上方。在本实施例中,固定端142大致呈长条状,自由端143也大致呈长条状并与所述固定端142平行设置。在本实施例中,固定端142通过周边部15与基底2连接,从而加强固定端142与基底2之间的连接强度。Specifically, the diaphragm 14 includes a fixed end 142 connected to the base 2 and/or the supporting portion 12, a free end 143 arranged parallel to and opposite to the fixed end 142, and a connection between the fixed end 142 and the free end 143.体部141。 Main body 141. The width of the main body 141 gradually decreases from the fixed end 142 toward the free end 141. Both the free end 143 and the main body 141 are suspended above the back cavity 20. In this embodiment, the fixed end 142 is substantially elongated, and the free end 143 is also substantially elongated and is arranged parallel to the fixed end 142. In this embodiment, the fixed end 142 is connected to the base 2 through the peripheral portion 15 so as to strengthen the connection strength between the fixed end 142 and the base 2.

在本实施例中,主体部141大致呈梯形,包括与固定端142连接的第一侧边1411、与自由端142重叠的第二侧边1412以及连接在第一侧边1411和第二侧边1412且间隔设置的两斜边1413。第一侧边1411和第二侧边1412平行设置且第一侧边1411的长度大于第二侧边1412的长度。第二侧边1412以及两斜边1413均悬置于背腔20的上方。固定端142与周边部15连接时,第一侧边1411与周边部15之间间隔设置并形成间隙145。固定端142与支撑部12连接时,第一侧边1411与支撑部12之间间隔设置并形成间隙145。通过该缝隙结构的设置,以调整麦克风100灵敏度,电极层(101、102、103)的覆盖区域也会根据缝隙结构进行优化以得到最优信噪比。振动区域10中设置多个膜片14时,两膜片14之间相邻的第二侧边1412之间形成间隙145,相邻的斜边1413之间也形成间隙145,相邻的第二侧边1412与斜边1413之间也形成间隙145。In this embodiment, the main body 141 is substantially trapezoidal, and includes a first side 1411 connected to the fixed end 142, a second side 1412 overlapping with the free end 142, and a second side 1411 connected to the first side 1411 and the second side 1411. 1412 and two oblique sides 1413 arranged at intervals. The first side 1411 and the second side 1412 are arranged in parallel, and the length of the first side 1411 is greater than the length of the second side 1412. The second side 1412 and the two oblique sides 1413 are both suspended above the back cavity 20. When the fixed end 142 is connected to the peripheral portion 15, a gap 145 is formed between the first side edge 1411 and the peripheral portion 15. When the fixed end 142 is connected to the supporting portion 12, a gap 145 is formed between the first side 1411 and the supporting portion 12. Through the setting of the slot structure to adjust the sensitivity of the microphone 100, the coverage area of the electrode layers (101, 102, 103) will also be optimized according to the slot structure to obtain the optimal signal-to-noise ratio. When multiple diaphragms 14 are provided in the vibrating area 10, a gap 145 is formed between the adjacent second sides 1412 between the two diaphragms 14 and a gap 145 is also formed between adjacent hypotenuses 1413. A gap 145 is also formed between the side 1412 and the hypotenuse 1413.

振动区域10中可以设置至少两个膜片14,且相邻的两个膜片14的自由端相对设置。在本实施例中,振动区域10呈梯形,设有4个膜片14。分别为第一膜片1401、第二膜片1402、第三膜片1403和第四膜片1404。第一膜片1401、第二膜片1402、第三膜片1403和第四膜片1404的自由端142均朝向振动区域10的中心延伸。其中,第一膜片1401和第二膜片1402对称设置,第三膜片1403和第四膜片1404分别位于第一膜片1401和第二膜片1402的相对两侧。第一膜片1401通过固定端141与周边部15连接,且其第一侧边1411与基底2之间形成间隙145。第二膜片1402通过固定端142与支撑部12连接,且第二膜片1402的第一侧边1411与支撑部12之间形成间隙145。第一膜片1401的第二侧边1412与第二膜片1402的第二侧边1412相互之间形成间隙145。第三膜片1403通过固定端141与基底2的一侧连接,且其第一侧边1411与该周边部15的一侧形成间隙145;第三膜片1403的第二侧边1412与第二膜片1402的一斜边1413之间形成间隙,且第三膜片1403的一斜边1413与支撑部12之间形成间隙145,另一斜边1413与第一膜片1401的其中一斜边1413之间形成间隙145。第四膜片1404通过固定端141与周边部15的另一侧连接,且其第一侧边1411与该周边部15的另一侧形成间隙145;第四膜片1404的第二侧边1412与第二膜片1402的另一斜边1413形成间隙145;第四膜片1404的其中一斜边1413与第一膜片1401的另一斜边1413形成间隙145,另一斜边1413与支撑部12之间形成间隙145。At least two diaphragms 14 may be provided in the vibrating area 10, and the free ends of two adjacent diaphragms 14 are arranged opposite to each other. In this embodiment, the vibrating area 10 has a trapezoidal shape and four diaphragms 14 are provided. They are a first diaphragm 1401, a second diaphragm 1402, a third diaphragm 1403, and a fourth diaphragm 1404, respectively. The free ends 142 of the first diaphragm 1401, the second diaphragm 1402, the third diaphragm 1403, and the fourth diaphragm 1404 all extend toward the center of the vibration area 10. The first diaphragm 1401 and the second diaphragm 1402 are symmetrically arranged, and the third diaphragm 1403 and the fourth diaphragm 1404 are located on opposite sides of the first diaphragm 1401 and the second diaphragm 1402, respectively. The first diaphragm 1401 is connected to the peripheral portion 15 through the fixed end 141, and a gap 145 is formed between the first side 1411 and the base 2. The second diaphragm 1402 is connected to the supporting portion 12 through the fixed end 142, and a gap 145 is formed between the first side 1411 of the second diaphragm 1402 and the supporting portion 12. The second side 1412 of the first diaphragm 1401 and the second side 1412 of the second diaphragm 1402 form a gap 145 between each other. The third diaphragm 1403 is connected to one side of the base 2 through the fixed end 141, and its first side 1411 and one side of the peripheral portion 15 form a gap 145; the second side 1412 of the third diaphragm 1403 is connected to the second side 1412 A gap is formed between one oblique side 1413 of the diaphragm 1402, and a gap 145 is formed between one oblique side 1413 of the third diaphragm 1403 and the supporting portion 12, and the other oblique side 1413 is connected to one of the oblique sides of the first diaphragm 1401. A gap 145 is formed between 1413. The fourth diaphragm 1404 is connected to the other side of the peripheral portion 15 through the fixed end 141, and its first side 1411 and the other side of the peripheral portion 15 form a gap 145; the second side 1412 of the fourth diaphragm 1404 A gap 145 is formed with the other oblique side 1413 of the second diaphragm 1402; one of the oblique sides 1413 of the fourth diaphragm 1404 and the other oblique side 1413 of the first diaphragm 1401 form a gap 145, and the other oblique side 1413 is connected to the support A gap 145 is formed between the parts 12.

与相关技术相比,本发明提供的上述压电MEMS麦克风通过在基底上设置支撑部,麦克风还设有与所述背腔正对设置的压电振膜,所述支撑部将所述压电振膜分隔成至少两个振动区域,以使得在给定压电振膜的面积下对声压的利用面积达到更大;每个振动区域设置至少一个膜片,且膜片的长度较短,从而使麦克风具有更高的谐振频率,进而提高麦克风的灵敏度。Compared with the related art, the piezoelectric MEMS microphone provided by the present invention is provided with a support part on the substrate, and the microphone is also provided with a piezoelectric diaphragm arranged directly opposite to the back cavity, and the support part connects the piezoelectric The diaphragm is divided into at least two vibration regions, so that the sound pressure utilization area is larger under a given area of the piezoelectric diaphragm; each vibration region is provided with at least one diaphragm, and the length of the diaphragm is relatively short, So that the microphone has a higher resonance frequency, thereby increasing the sensitivity of the microphone.

以上所述的仅是本发明的实施方式,在此应当指出,对于本领域的普通技术人员来说,在不脱离本发明创造构思的前提下,还可以做出改进,但这些均属于本发明的保护范围。The above are only the embodiments of the present invention. It should be pointed out here that for those of ordinary skill in the art, improvements can be made without departing from the inventive concept of the present invention, but these all belong to the present invention. The scope of protection.

Claims (10)

一种压电MEMS麦克风,其特征在于,包括:A piezoelectric MEMS microphone is characterized in that it comprises: 具有背腔的基底;Substrate with back cavity; 正对所述背腔设置的压电振膜,所述压电振膜包括设置于所述背腔上方的支撑部;所述支撑部将所述压电振膜分隔成至少两个振动区域;A piezoelectric vibrating membrane arranged opposite to the back cavity, the piezoelectric vibrating membrane including a supporting part arranged above the back cavity; the supporting part separates the piezoelectric vibrating membrane into at least two vibration regions;    所述压电振膜还包括设于每个所述振动区域的至少一个膜片,所述膜片包括与所述基底或所述支撑部连接的固定端、与所述固定端平行且相对设置的自由端以及连接固定端与所述自由端的主体部,所述自由端与主体部均悬置于所述背腔上方;所述主体部的宽度自所述固定端朝所述自由端的方向逐渐减小。The piezoelectric diaphragm further includes at least one diaphragm provided in each of the vibration regions, the diaphragm includes a fixed end connected to the base or the support portion, and is arranged parallel to and opposite to the fixed end The free end and the main body connecting the fixed end and the free end, the free end and the main body are both suspended above the back cavity; the width of the main body gradually increases from the fixed end toward the free end Decrease. 根据权利要求1所述的压电MEMS麦克风,其特征在于,所述支撑部将所述压电振膜分隔成两个振动区域,且两个振动区域关于所述支撑部对称设置。The piezoelectric MEMS microphone according to claim 1, wherein the support portion divides the piezoelectric diaphragm into two vibration regions, and the two vibration regions are symmetrically arranged with respect to the support portion. 根据权利要求2所述的压电MEMS麦克风,其特征在于,每个所述振动区域设有至少两个所述膜片,且相邻两个膜片的自由端相对设置。The piezoelectric MEMS microphone according to claim 2, wherein each of the vibration regions is provided with at least two diaphragms, and the free ends of two adjacent diaphragms are arranged opposite to each other. 根据权利要求3所述的压电MEMS麦克风,其特征在于,每个所述振动区域呈梯形,每个所述振动区域包括四个膜片,所述四个膜片的自由端均朝向所述振动区域的中心延伸。The piezoelectric MEMS microphone according to claim 3, wherein each of the vibration areas is trapezoidal, each of the vibration areas includes four diaphragms, and the free ends of the four diaphragms all face the The center of the vibration zone extends. 根据权利要求4所述的压电MEMS麦克风,其特征在于,所述压电振膜还包括环绕所述振动区域的周边部,所述周边部叠设且固定于所述基底的上方。4. The piezoelectric MEMS microphone according to claim 4, wherein the piezoelectric diaphragm further comprises a peripheral portion surrounding the vibrating area, and the peripheral portion is stacked and fixed above the base. 根据权利要求5所述的压电MEMS麦克风,其特征在于,所述主体部呈梯形,其包括与所述固定端连接的第一侧边、设置于所述自由端的第二侧边以及连接在第一侧边与第二侧边之间的两条斜边,所述第一侧边的长度大于所述第二侧边的长度,所述第二侧边以及两条斜边均悬置于所述背腔的上方。The piezoelectric MEMS microphone according to claim 5, wherein the main body has a trapezoidal shape and includes a first side connected to the fixed end, a second side provided on the free end, and a second side connected to the free end. The two hypotenuses between the first side and the second side, the length of the first side is greater than the length of the second side, and the second side and the two hypotenuses are both suspended Above the back cavity. 根据权利要求6所述的压电MEMS麦克风,其特征在于,部分所述第一侧边与所述周边部和/或所述支撑部之间形成缝隙。The piezoelectric MEMS microphone according to claim 6, wherein a gap is formed between part of the first side edge and the peripheral portion and/or the supporting portion. 根据权利要求7所述的压电MEMS麦克风,其特征在于,所述四个膜片中相邻的两条所述第二侧边之间形成所述缝隙、相邻的两条所述斜边之间形成所述缝隙以及相邻的所述第二侧边与所述斜边之间均形成所述缝隙。The piezoelectric MEMS microphone according to claim 7, wherein the gap is formed between the two adjacent second side edges of the four diaphragms, and the two adjacent hypotenuses The gap is formed therebetween, and the gap is formed between the adjacent second side edge and the hypotenuse. 根据权利要求1所述的压电MEMS麦克风,其特征在于,所述膜片包括依次堆叠设置的第一电极层、压电层、第二电极层。The piezoelectric MEMS microphone according to claim 1, wherein the diaphragm comprises a first electrode layer, a piezoelectric layer, and a second electrode layer stacked in sequence. 根据权利要求1所述的压电MEMS麦克风,其特征在于,所述膜片包括依次堆叠设置的第一电极层、压电层、第二电极层、压电层和第一电极层。The piezoelectric MEMS microphone according to claim 1, wherein the diaphragm comprises a first electrode layer, a piezoelectric layer, a second electrode layer, a piezoelectric layer, and a first electrode layer stacked in sequence.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115914975A (en) * 2022-12-08 2023-04-04 地球山(苏州)微电子科技有限公司 A pixel sound unit and its manufacturing method, digital sound chip

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111866684B (en) * 2020-08-28 2024-09-20 安徽奥飞声学科技有限公司 A MEMS structure
CN213342677U (en) * 2020-09-27 2021-06-01 瑞声科技(南京)有限公司 Piezoelectric microphone
CN112261561B (en) * 2020-09-29 2021-10-19 瑞声科技(南京)有限公司 MEMS sound production device
CN112261562A (en) * 2020-09-29 2021-01-22 瑞声科技(南京)有限公司 MEMS loudspeaker
CN112584289B (en) * 2020-11-30 2022-03-08 瑞声新能源发展(常州)有限公司科教城分公司 Piezoelectric microphone and manufacturing method thereof
CN112601169B (en) * 2020-12-15 2021-09-24 武汉大学 A Broadband High Sensitivity Resonant Piezoelectric MEMS Microphone
CN113115188B (en) * 2021-03-29 2023-07-04 瑞声声学科技(深圳)有限公司 MEMS piezoelectric microphone
CN113490120A (en) * 2021-07-07 2021-10-08 瑞声开泰科技(武汉)有限公司 MEMS loudspeaker
CN216852339U (en) * 2021-12-31 2022-06-28 瑞声声学科技(深圳)有限公司 A MEMS microphone

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018207578A1 (en) * 2017-05-09 2018-11-15 富士フイルム株式会社 Piezoelectric microphone chip and piezoelectric microphone
CN109495829A (en) * 2018-12-31 2019-03-19 瑞声声学科技(深圳)有限公司 Piezoelectric type MEMS microphone
CN110545511A (en) * 2019-08-16 2019-12-06 瑞声声学科技(深圳)有限公司 Piezoelectric MEMS Microphone
CN110650420A (en) * 2019-08-16 2020-01-03 瑞声声学科技(深圳)有限公司 Piezoelectric MEMS microphone

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008541644A (en) * 2005-05-17 2008-11-20 エヌエックスピー ビー ヴィ Improved membrane for MEMS-type condenser microphones
DE102012212112A1 (en) * 2012-07-11 2014-01-30 Robert Bosch Gmbh Component with a micromechanical microphone structure
CN103686570B (en) * 2013-12-31 2017-01-18 瑞声声学科技(深圳)有限公司 MEMS (micro electro mechanical system) microphone
DE102015213771A1 (en) * 2015-07-22 2017-01-26 Robert Bosch Gmbh MEMS device with sound pressure-sensitive membrane element
CN109587613B (en) * 2018-12-31 2020-11-10 瑞声声学科技(深圳)有限公司 Piezoelectric microphone

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018207578A1 (en) * 2017-05-09 2018-11-15 富士フイルム株式会社 Piezoelectric microphone chip and piezoelectric microphone
CN109495829A (en) * 2018-12-31 2019-03-19 瑞声声学科技(深圳)有限公司 Piezoelectric type MEMS microphone
CN110545511A (en) * 2019-08-16 2019-12-06 瑞声声学科技(深圳)有限公司 Piezoelectric MEMS Microphone
CN110650420A (en) * 2019-08-16 2020-01-03 瑞声声学科技(深圳)有限公司 Piezoelectric MEMS microphone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115914975A (en) * 2022-12-08 2023-04-04 地球山(苏州)微电子科技有限公司 A pixel sound unit and its manufacturing method, digital sound chip

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